Sample records for indium tin oxide

  1. Sandia National Laboratories: indium tin oxide

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    indium tin oxide Sandian Selected for Outstanding Engineer Award On December 10, 2014, in Energy, Materials Science, News, News & Events, Photovoltaic, Renewable Energy, Research &...

  2. Micropatterning of Proteins and Mammalian Cells on Indium Tin Oxide

    E-Print Network [OSTI]

    Revzin, Alexander

    Micropatterning of Proteins and Mammalian Cells on Indium Tin Oxide Sunny S. Shah, Michael C and electrochemical activation to create micropatterned cocultures on indium tin oxide (ITO) substrates applications in tissue engineering and biosensing. KEYWORDS: indium tin oxide · photolithography · switchable

  3. P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide

    E-Print Network [OSTI]

    P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide Sputtering Targets M. Schlott, M from indium-oxide tin-oxide (ITO) targets [1]. Unfor- tunately, black growths, or nodules, commonly isostatic pressing partly reduced powder mixtures of 90 wt.% indium-oxide and 10 wt.% tin-oxide [4

  4. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15T23:59:59.000Z

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  5. Laser Direct Write Patterned Indium Tin Oxide Films for Photomasks and Anisotropic Resist Applications

    E-Print Network [OSTI]

    Chapman, Glenn H.

    Laser Direct Write Patterned Indium Tin Oxide Films for Photomasks and Anisotropic Resist bimetallic Sn/In film into a indium tin oxide layer. Sn over In films (15-120nm thick) with a 1:10 thickness mask, etch resist. 1. Introduction The transparent and conductive films like indium tin oxide (ITO

  6. The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films

    E-Print Network [OSTI]

    Shahriar, Selim

    MRSEC The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films D Science & Engineering Center For zinc-indium-tin oxide (ZITO) films, grown by pulsed-laser deposition was replaced by substitution with zinc and tin in equal molar proportions (co-substitution). All ZITO films

  7. EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes

    E-Print Network [OSTI]

    EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes and Technology Clear Water Bay, Kowloon, Hong Kong Abstract Indium-tin oxide anodes capped with certain oxides-emitting diodes (OLEDs). The oxides of tin, zinc, praseodymium, yttrium, gallium, terbium and titanium have been

  8. Patterning of indium tin oxide by projection photoablation and lift-off process for fabrication of flat-panel displays

    E-Print Network [OSTI]

    Jain, Kanti

    Patterning of indium tin oxide by projection photoablation and lift-off process for fabrication online 25 June 2007 Indium tin oxide ITO , an important material used as a transparent conductive oxide in such fabrication. Therefore, innovations in patterning tech- nology, especially for materials such as indium tin

  9. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement 

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16T23:59:59.000Z

    Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

  10. Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic

    E-Print Network [OSTI]

    Surface modification of indium tin oxide by plasma treatment: An effective method to improve; accepted for publication 7 January 1997 We demonstrate the improvement of an indium tin oxide anode contact conductivity, and effi- ciency as a hole injector into organic materials, indium tin oxide ITO has been widely

  11. Indium tin oxide single-mode waveguide modulator Ray T. Chen, Dan Robinson, Huey Lu, Lev Sadovnik, and Zonh-Zen Ho

    E-Print Network [OSTI]

    Chen, Ray

    Indium tin oxide single-mode waveguide modulator Ray T. Chen, Dan Robinson, Huey Lu, Lev Sadovnik containing an indium tin oxide waveguide, two holographic mirrors, two microprisms, and two ohmic contacts range of interest. The index of refraction of an indium tin oxide film can be represented by 362 / SPIE

  12. High-efficiency indium tin oxide/indium phosphide solar cells

    SciTech Connect (OSTI)

    Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

    1989-06-26T23:59:59.000Z

    Improvements in the performance of indium tin oxide/indium phosphide (ITO/InP) solar cells have been achieved by using dc magnetron sputter deposited /ital n/-ITO onto an epitaxial /ital p///ital p//sup +/ structure grown on good quality commercial /ital p//sup +/ bulk substrates. The composition of the sputtering gas has been investigated and the highest efficiency cells resulted when the surface of the epilayer was exposed to an Ar/H/sub 2/ plasma before depositing the bulk of the ITO in a more typical Ar/O/sub 2/ plasma. With H/sub 2/ processing, record efficiencies of 18.9% global, 1000 W m/sup /minus/2/, 25 /degree/C (17.0% air mass zero) were achieved. Without H/sub 2/ processing, the devices exhibited lower efficiencies and were unstable. Type conversion of the InP was shown to occur and was established as being associated with the ITO (possibly due to Sn donors) rather than sputter damage. These improvements in performance have resulted from the optimization of the doping, thickness, transport, and surface properties of the /ital p/-type base, as well as from better control over the ITO deposition procedure.

  13. Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    : This paper reports on performance enhancement of polymer light-emitting diodes (PLEDs) based on poly(2,5-bis. Keywords : Polymer light emitting diode; Indium tin oxide; Atomic force microscopy; Rutherford backscattering spectroscopy 1. Introduction Polymer light-emitting diodes (PLEDs) have received worldwide

  14. Using indium tin oxide material to implement the imaging of microwave plasma ignition process

    SciTech Connect (OSTI)

    Wang, Qiang; Hou, Lingyun; Zhang, Guixin, E-mail: guixin@mail.tsinghua.edu.cn; Zhang, Boya; Liu, Cheng [Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China); Wang, Zhi; Huang, Jian [State Key Laboratory of Automotive Safety and Energy, Tsinghua University, Beijing 100084 (China)

    2014-02-17T23:59:59.000Z

    In this paper, a method is introduced to get global observation of microwave plasma ignition process at high pressure. A microwave resonator was designed with an indium tin oxide coated glass at bottom. Microwave plasma ignition was implemented in methane and air mixture at 10 bars by a 2?ms-3?kW-2.45?GHz microwave pulse, and the high speed images of the ignition process were obtained. The images visually proved that microwave plasma ignition could lead to a multi-point ignition. The system may also be applied to obtain Schlieren images, which is commonly used to observe the development of flame kernel in an ignition process.

  15. Efficient Electro-Optical Modulation Based on Indium Tin Oxide

    E-Print Network [OSTI]

    Shi, Kaifeng

    2015-01-01T23:59:59.000Z

    We experimentally demonstrate several electro-optical modulators based on transparent conducting oxides. Our previous work demonstrated the modulator structure on glass substrate with broadband bias polarity-dependent modulation. Further exploration shows similar modulation effect of the modulator on quartz and silicon substrate.

  16. Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics

    SciTech Connect (OSTI)

    Doggart, P.; Bristow, N.; Kettle, J., E-mail: j.kettle@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean St., Bangor, Gwynedd, Wales LL57 1UT (United Kingdom)

    2014-09-14T23:59:59.000Z

    The influence of indium tin oxide [(In{sub 2}O{sub 3}:Sn), ITO] material properties on the output performance of organic photovoltaic (OPV) devices has been modelled and investigated. In particular, the effect of altering carrier concentration (n), thickness (t), and mobility (?{sub e}) in ITO films and their impact on the optical performance, parasitic resistances and overall efficiency in OPVs was studied. This enables optimal values of these parameters to be calculated for solar cells made with P3HT:PC{sub 61}BM and PCPDTBT:PC{sub 71}BM active layers. The optimal values of n, t and ?{sub e} are not constant between different OPV active layers and depend on the absorption spectrum of the underlying active layer material system. Consequently, design rules for these optimal values as a function of donor bandgap in bulk-heterojunction active layers have been formulated.

  17. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung-Hee University, 1 Seocheon-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Noh, Yong-Jin; Na, Seok-In [Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeonju-si, Jeollabuk-do 561-756 (Korea, Republic of)

    2014-09-01T23:59:59.000Z

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8?nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55?×?10{sup ?5} ? cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54?×?10{sup ?3} ?{sup ?1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10?nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

  18. Interfacial reactions between indium tin oxide and triphenylamine tetramer layers induced by photoirradiation

    SciTech Connect (OSTI)

    Satoh, Toshikazu; Fujikawa, Hisayoshi [Toyota Central R and D Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Yamamoto, Ichiro; Murasaki, Takanori; Kato, Yoshifumi [Toyota Industries Corporation, 8 Chaya, Kyowa, Obu, Aichi 474-8601 (Japan)

    2008-05-01T23:59:59.000Z

    The effects of photoirradiation on the interfacial chemical reactions between indium tin oxide (ITO) films and layers of triphenylamine tetramer (TPTE) were investigated by using in situ x-ray photoelectron spectroscopy (XPS). Thin TPTE layers deposited onto sputter-deposited ITO films were irradiated with violet light-emitting diodes (peak wavelength: 380 nm). Shifts in the peak positions of spectral components that originated in the organic layer toward the higher binding-energy side were observed in the XPS profiles during the early stages of irradiation. No further peak shifts were observed after additional irradiation. An increase in the ratio of the organic component in the O 1s spectra was also observed during the photoirradiation. The ratio of the organic component increased in proportion to the cube root of the irradiation time. These results suggest that photoirradiation induces an increase in the height of the carrier injection barrier at the interface between TPTE and ITO in the early stages of the irradiation, possibly due to the rapid diffusion controlled formation and growth of an oxidized TPTE layer, which is considered to act as a high resistance layer.

  19. Performance enhancement of organic light-emitting diodes by chlorine plasma treatment of indium tin oxide

    SciTech Connect (OSTI)

    Cao, X. A.; Zhang, Y. Q. [Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia 26506 (United States)

    2012-04-30T23:59:59.000Z

    The characteristics of green phosphorescent organic light-emitting diodes (OLEDs) fabricated on ITO/glass substrates pretreated with low-energy O{sub 2} and Cl{sub 2} plasma were compared. At 20 mA/cm{sup 2}, the OLEDs with O{sub 2} and Cl{sub 2} plasma-treated indium tin oxide (ITO) had voltages of 9.6 and 7.6 eV, and brightness of 9580 and 12380 cd/m{sup 2}, respectively. At {approx}10{sup 4} cd/m{sup 2}, the latter had a 30% higher external quantum efficiency and a 74% higher power efficiency. Photoelectron spectroscopies revealed that Cl{sub 2} plasma treatment created stable In-Cl bonds and raised the work function of ITO by up to 0.9 eV. These results suggest that the better energy level alignment at the chlorinated ITO/organic interface enhances hole injection, leading to more efficient and more reliable operation of the OLEDs. The developed plasma chlorination process is very effective for surface modification of ITO and compatible with the fabrication of various organic electronics.

  20. A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

    SciTech Connect (OSTI)

    Deka, Angshuman; Nanda, Karuna Kar [Materials Research Centre, Indian Institute of Science, Bangalore - 560012 (India)

    2013-06-15T23:59:59.000Z

    ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

  1. Viscoelastic DampingViscoelastic Damping Characteristics of Indium-Tin/Characteristics of Indium-Tin/SiCSiC

    E-Print Network [OSTI]

    Swan Jr., Colby Corson

    1 Viscoelastic DampingViscoelastic Damping Characteristics of Indium-Tin/Characteristics of Indium-Tin Approach: · Based on past experience, indium-tin has well- characterized stiffness/damping. · Fabricate

  2. Investigation of buried homojunctions in p -InP formed during sputter deposition of both indium tin oxide and indium oxide

    SciTech Connect (OSTI)

    Gessert, T.A.; Li, X.; Wanlass, M.W.; Nelson, A.J.; Coutts, T.J. (Solar Energy Research Institute, Golden, CO (USA))

    1990-05-01T23:59:59.000Z

    Although it is apparent that direct current (dc) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single crystal {ital p}-type InP, the actual mechanism of type conversion of the InP surface is not clear, nor is it immediately obvious how further improvements may be achieved. Previously, we have suggested that type conversion is caused by indiffusion of Sn during the ITO deposition process and additionally demonstrated that this effect is strengthened by the presence of hydrogen in the sputtering gas. Recently, however, efficiencies of almost 17% (Global) have been achieved for cells fabricated by sputter depositing In{sub 2}O{sub 3}(IO) alone, strongly suggesting that the Sn may not be an essential part of type conversion. In this work, a variety of electrical and optical techniques has been used to assess the changes at the ITO/InP and IO/InP interfaces. From these, it is concluded that several mechanisms, including passivation of acceptors by hydrogen and sputter damage,'' occur simultaneously. This analysis suggests several directions for further improvement of these devices.

  3. Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

    SciTech Connect (OSTI)

    Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Bong Kyu; Ahn, Chang-Geun; Kim, Sang-Hyeob [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of); Choi, Chel-Jong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-07-21T23:59:59.000Z

    We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter?

  4. Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

    SciTech Connect (OSTI)

    Gao, S.; Chen, C.; Liu, H. Y.; Lin, Y. S.; Li, S. Z.; Lu, S. H.; Wang, G. Y.; Song, C.; Zeng, F., E-mail: zengfei@mail.tsinghua.edu.cn; Pan, F., E-mail: panf@mail.tsinghua.edu.cn [Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhai, Z. [Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2014-08-11T23:59:59.000Z

    The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ?10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000?s, and fast operation speed of <100?ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.

  5. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    SciTech Connect (OSTI)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07T23:59:59.000Z

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  6. Characterization of Amorphous Zinc Tin Oxide Semiconductors....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Zinc Tin Oxide Semiconductors. Characterization of Amorphous Zinc Tin Oxide Semiconductors. Abstract: Amorphous zinc tin oxide (ZTO) was investigated to determine the...

  7. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-04-21T23:59:59.000Z

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

  8. Enhancement of conduction noise absorption by hybrid absorbers composed of indium-tin-oxide thin film and magnetic composite sheet on a microstrip line

    SciTech Connect (OSTI)

    Kim, Sun-Hong; Kim, Sung-Soo, E-mail: sskim@chungbuk.ac.kr [Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-05T23:59:59.000Z

    In order to develop wide-band noise absorbers with a focused design for low frequency performance, this study investigates hybrid absorbers that are composed of conductive indium-tin-oxide (ITO) thin film and magnetic composite sheets. The ITO films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ?10{sup ?4} ? m. Rubber composites with flaky Fe-Si-Al particles are used as the magnetic sheet with a high permeability and high permittivity. For the ITO film with a low surface resistance and covered by the magnetic sheet, approximately 90% power absorption can be obtained at 1?GHz, which is significantly higher than that of the original magnetic sheet or ITO film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the ITO film through increased electric field strength bounded by the upper magnetic composite sheet. However, for the reverse layering sequence of the ITO film, the electric field experienced by ITO film is very weak due to the electromagnetic shielding by the under layer of magnetic sheet, which does not result in enhanced power absorption.

  9. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    SciTech Connect (OSTI)

    Chen, Dazheng; Zhang, Chunfu, E-mail: cfzhang@xidian.edu.cn; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue, E-mail: yhao@xidian.edu.cn [State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South Taibai Road, Xi'an 710071 (China)

    2014-06-16T23:59:59.000Z

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150?°C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100?°C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  10. Aluminum Foil Mediated Noncatalytic Growth of ZnO Nanowire Arrays on an Indium Tin Oxide Substrate

    E-Print Network [OSTI]

    Kim, Bongsoo

    substrate would find useful applications in field emission displays and solar cells. Introduction Zinc oxide in optoelectronics such as field emission displays (FEDs) and solar cells.3,4 Developing convenient and reproducible applications because it has been widely used as a transparent electrode in conventional flat panel displays

  11. High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Li, X.; Wanlass, M.W.; Gessert, T.A.; Emery, K.A.; Coutts, T.J.

    1989-05-01T23:59:59.000Z

    Solar cells based on dc magnetron sputtered indium tin oxide onto epitaxially grown films of p-InP have been fabricated and analyzed. The best cells had a global efficiency of 18.4% and an air mass zero (AMO) efficiency of 16.0%. The principal fabrication variable considered was the constituency of the sputtering gas and both argon/hydrogen and argon/oxygen mixtures have been used. The former cells have the higher efficiencies, are apparently stable, and exhibit almost ideal junction characteristics. The latter cells are relatively unstable and exhibit much higher ideality factors and reverse saturation current densities. The temperature dependence of the reverse saturation current indicates totally different charge transfer mechanisms in the two cases.

  12. Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Jeffrey W. Elam,*, David A. Baker, Alex B. F. Martinson,, Michael J. Pellin, and

    E-Print Network [OSTI]

    precise coatings to be applied on all exposed surfaces of nanoporous substrates such as aerogels10 using ALD techniques to apply metal oxide coatings onto porous supports such as anodic aluminum oxide

  13. Thickness dependent self limiting 1-D tin oxide nanowire arrays...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dependent self limiting 1-D tin oxide nanowire arrays by nanosecond pulsed laser irradiation. Thickness dependent self limiting 1-D tin oxide nanowire arrays by nanosecond pulsed...

  14. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular...

  15. In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin oxide thin films on polyimide substrates

    E-Print Network [OSTI]

    Li, Teng

    oxide thin films on polyimide substrates Cheng Peng,1 Zheng Jia,2 Dan Bianculli,1 Teng Li,2,a) and Jun thicknesses (200 and 80 nm) deposited on polyimide substrates inside a scanning electron microscope. The crack model, the cohesive toughness and fracture strength of ITO thin films and the ITO/polyimide interfacial

  16. Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnOx, x 02) Particles

    E-Print Network [OSTI]

    Wooldridge, Margaret S.

    Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnOx, x 0 the concentration of oxygen in the reactant gases and the flame temperatures, metallic tin (Sn), tin monoxide (romarchite SnO), and/or tin dioxide (cassiterite SnO2) were generated. The crystalline powders consisted

  17. Rank Extraction in Tin-Oxide Sensor Arrays Page 1 of 23 Rank Extraction in Tin-Oxide Sensor Arrays

    E-Print Network [OSTI]

    Roppel, Thaddeus A.

    Rank Extraction in Tin-Oxide Sensor Arrays Page 1 of 23 Rank Extraction in Tin-Oxide Sensor Arrays the amount of data to be processed. This work is a first example in feature extraction from tin-oxide sensors element array of tin-oxide sensors is presented. Results are extrapolated to other arrays of chemical

  18. Electrical and Optical Properties of Transparent Conducting Homologous Compounds in the IndiumGalliumZinc Oxide System

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    , smart windows, and solar cells. Tin-doped indium oxide (ITO) is the commercial TCO of choice. ITO thin TRANSPARENT conducting oxides (TCOs) are used in a wide variety of applications, such as flat-panel displays, and lower cost are desired for use in demanding ap- plications such as next-generation flat-panel displays

  19. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28T23:59:59.000Z

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  20. Lithiation of Tin Oxide: A Computational Study

    E-Print Network [OSTI]

    Pedersen, Andreas

    2015-01-01T23:59:59.000Z

    We suggest that the lithiation of pristine SnO forms a layered Li$_\\text{X}$O structure while the expelled tin atoms agglomerate into 'surface' planes separating the Li$_\\text{X}$O layers. The proposed lithiation model widely differs from the common assumption that tin segregates into nano-clusters embedded in the lithia matrix. With this model we are able to account for the various tin bonds that are seen experimentally and explain the three volume expansion phases that occur when SnO undergoes lithiation: (i) at low concentrations Li behaves as an intercalated species inducing small volume increases; (ii) for intermediate concentrations SnO transforms into lithia causing a large expansion; (iii) finally, as the Li concentration further increases a saturation of the lithia takes place until a layered Li$_2$O is formed. A moderate volume expansion results from this last process. We also report a 'zipper' nucleation mechanism that could provide the seed for the transformation from tin oxide to lithium oxide.

  1. Supporting Information Hybrid Tin Oxide-SWNT Nanostructures Based Gas

    E-Print Network [OSTI]

    S1 Supporting Information Hybrid Tin Oxide-SWNT Nanostructures Based Gas Sensor Syed Mubeen1 , Min) and (c) showing high magnification SEM images of bare SWNTs and SWNTs coated with tin oxide (-0.4 V vs of bare SWNTs and SWNTs coated with tin oxide (-0.4 V vs. Ag/AgCl wire, 5 µC) towards a) H2S, b) acetone

  2. Atomic layer deposition of tin oxide films using tetrakis,,dimethylamino... tin Jeffrey W. Elam,a

    E-Print Network [OSTI]

    Atomic layer deposition of tin oxide films using tetrakis,,dimethylamino... tin Jeffrey W. Elam dimethylamino tin and hydrogen peroxide. This method avoids problems of corrosion and agglomeration associated with the halogenated compound, SnCl4. Tin oxide films were successfully deposited on a variety of substrates using

  3. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect (OSTI)

    Hu, W.; Peterson, R. L., E-mail: blpeters@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2014-05-12T23:59:59.000Z

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 ?-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34??m, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  4. Photovoltaic effect of lead-free (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} ferroelectric thin film using Pt and indium tin oxide top electrodes

    SciTech Connect (OSTI)

    Seok Woo, Won; Sik Won, Sung; Won Ahn, Chang; Chae, Song A; Won Kim, Ill, E-mail: kimiw@mail.ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of); Ullah, Aman [Department of Physics, University of Science and Technology, Bannu, Khyber Pakhtunkhwa (Pakistan)

    2014-01-21T23:59:59.000Z

    We have grown a Bi-layer structure (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} (NKBiT) ferroelectric thin film on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(100) substrate by using the chemical solution deposition method and deposited two kinds of thin Pt and indium tin oxide (ITO) top electrodes. The photovoltaic behaviors of Pt/NKBiT/Pt and ITO/NKBit/Pt capacitors were investigated over the wavelength range of 300–500?nm. When NKBiT thin film is illuminated by the corresponding wavelength of the film's energy band gap (E{sub g}), a photocurrent is generated due to the Schottky barrier between electrode and film, and an internal electric field is originated by the depolarization field. The maximum photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor in the poled-up state are obtained as 45.75?nA/cm{sup 2} and 0.035%, respectively, at 352?nm. The photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor increased to 3.5 times higher than that of the Pt/NKBiT/Pt capacitor.

  5. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect (OSTI)

    Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

    2014-09-01T23:59:59.000Z

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50?°C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  6. Amorphous tin-cadmium oxide films and the production thereof

    DOE Patents [OSTI]

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29T23:59:59.000Z

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  7. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1984-03-13T23:59:59.000Z

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  8. Room-Temperature Gas Sensing Based on Electron Transfer between Discrete Tin Oxide Nanocrystals and

    E-Print Network [OSTI]

    Chen, Junhong

    Room-Temperature Gas Sensing Based on Electron Transfer between Discrete Tin Oxide Nanocrystals and the response time. Rutile-structured tin oxide (SnO2) is an n-type semiconducting material widely used in gas

  9. Absorption of ac fields in amorphous indium-oxide films

    SciTech Connect (OSTI)

    Ovadyahu, Z. [Racah Institute of Physics, the Hebrew University, Jerusalem 91904 (Israel)

    2014-08-20T23:59:59.000Z

    Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3?x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

  10. Thermally Activated, Inverted Interfacial Electron Transfer Kinetics: High Driving Force Reactions between Tin Oxide Nanoparticles and

    E-Print Network [OSTI]

    between Tin Oxide Nanoparticles and Electrostatically-Bound Molecular Reactants Dennis A. Gaal and Joseph: The kinetics and mechanism of fast electron transfer (ET) between tin oxide nanoparticles and electrostatically-order studies establish that, at least in the short time regime, electrons are transferred directly from the tin

  11. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24T23:59:59.000Z

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  12. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, Carleton H. (1304 Onava Ct., NE., Albuquerque, NM 87112); Evans, Jr., Joseph Tate (13609 Verbena Pl., NE., Albuquerque, NM 87112)

    1998-01-01T23:59:59.000Z

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  13. Graphene oxide oxidizes stannous ions to synthesize tin sulfidegraphene nanocomposites with small crystal size for high performance lithium ion

    E-Print Network [OSTI]

    Cao, Guozhong

    Graphene oxide oxidizes stannous ions to synthesize tin sulfide­graphene nanocomposites with small September 2012 DOI: 10.1039/c2jm34864k This study reports a novel strategy of preparing graphene composites by employing graphene oxide as precursor and oxidizer. It is demonstrated that graphene oxide can oxidize

  14. Near room temperature lithographically processed metal-oxide transistors

    E-Print Network [OSTI]

    Tang, Hui, M. Eng. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    A fully lithographic process at near-room-temperature was developed for the purpose of fabricating transistors based on metal-oxide channel materials. The combination of indium tin oxide (ITO) as the source/drain electrodes, ...

  15. Mechanism for the formation of tin oxide nanoparticles and nanowires inside the mesopores of SBA-15

    SciTech Connect (OSTI)

    Satishkumar, G.; Titelman, L. [Blechner Center for Industrial Catalysis and Process Development, Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Landau, M.V., E-mail: mlandau@bgu.ac.i [Blechner Center for Industrial Catalysis and Process Development, Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)

    2009-10-15T23:59:59.000Z

    The formation of polycrystalline tin oxide nanoparticles (NP) and nanowires was investigated using nanocasting approach included solid-liquid strategy for insertion of SnCl{sub 2} precursor and SBA-15 silica as a hard template. HR-TEM and XRD revealed that during the thermal treatment in air 5 nm tin oxide NP with well defined Cassiterite structure were formed inside the SBA-15 matrix mesopores at 250 deg. C. After air calcination at 700 deg. C the NP assembled inside the SBA-15 mesopores as polycrystalline nanorods with different orientation of atomic layers in jointed nanocrystals. It was found that the structure silanols of silica matrix play a vital role in creating the tin oxide NP at low temperature. The pure tin chloride heated in air at 250 deg. C did not react with oxygen to yield tin oxide. Tin oxide NP were also formed during the thermal treatment of the tin chloride loaded SBA-15 in helium atmosphere at 250 deg. C. Hence, it is well evident that silanols present in the silica matrix not only increase the wetting of tin chloride over the surface of SBA-15 favoring its penetration to the matrix pores, but also react with hydrated tin chloride according to the proposed scheme to give tin oxide inside the mesopores. It was confirmed by XRD, N{sub 2}-adsorption, TGA-DSC and FTIR spectra. This phenomenon was further corroborated by detecting the inhibition of SnO{sub 2} NP formation at 250 deg. C after inserting the tin precursor to SBA-15 with reduced silanols concentration partially grafted with tin chloride. - Graphical abstract: The mechanism of formation of polycrystalline tin oxide nanoparticles (NP) and nanowires was investigated using nanocasting approach included solid-liquid strategy for insertion of SnCl{sub 2} precursor and SBA-15 silica as a hard template. It was found that the structure silanols of silica matrix play a vital role in creating the tin oxide NP during thermal treatment.

  16. Variable-Temperature Electrical Measurements of Zinc Oxide/Tin Oxide-Cosubstituted Indium Oxide

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    as transparent electrodes in solar cells, flat panel displays, and many other applications. The commercial TCO: Flat Panel Display Mater. Large Area Processes 1998, 508, 308. (4) Minami, T.; Takata, S.; Kakumu, T

  17. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1980-01-01T23:59:59.000Z

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  18. Electrochemical fabrication and optical properties of porous tin oxide films with structural colors

    SciTech Connect (OSTI)

    Cheng, Hua; Shu, Shiwei; Lee, Chris; Zeng, Shanshan [Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, 83 Tat Chee Av. Hong Kong (Hong Kong); Centre for Functional Photonics, City University of Hong Kong, 83 Tat Chee Av. Hong Kong (Hong Kong); Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue (Hong Kong); Lu, Zhouguang [Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Lu, Jian, E-mail: jianlu@cityu.edu.hk, E-mail: yangli@cityu.edu.hk [Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon (Hong Kong); Centre for Advanced Structural Materials, City University of Hong Kong Shenzhen Research Institute, 8 Yuexing 1st Road, Shenzhen Hi-Tech Industrial Park, Nanshan District, Shenzhen (China); Li, Yang Yang, E-mail: jianlu@cityu.edu.hk, E-mail: yangli@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, 83 Tat Chee Av. Hong Kong (Hong Kong); Centre for Functional Photonics, City University of Hong Kong, 83 Tat Chee Av. Hong Kong (Hong Kong); Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue (Hong Kong); City University of Hong Kong Shenzhen Research Institute, 8 Yuexing 1st Road, Shenzhen Hi-Tech Industrial Park, Nanshan District, Shenzhen (China)

    2014-10-21T23:59:59.000Z

    Photonic crystals with porous features not only provide the capability to control light but also enable structural colors that are environmentally sensitive. Here, we report a novel kind of tin oxide-based photonic crystal featuring periodically arranged air pores fabricated by the periodic anodization of tin foil. The existence of a photonic band gap in the fabricated structure is verified by its vivid color, and its reflective spectra which are responsive to environmental stimuli. Furthermore, the sample colors (i.e., the photonic band gap positions) can be easily adjusted by manipulating the anodization parameters. The theoretical modeling results of these tin oxide photonic crystals agree well with the reported experimental ones.

  19. Passivation and anodic oxidation of duplex TiN coating on stainless steel

    SciTech Connect (OSTI)

    Rudenja, S.; Pan, J.; Wallinder, I.O.; Leygraf, C.; Kulu, P.

    1999-11-01T23:59:59.000Z

    The passivation and anodic oxidation of duplex TiN coatings deposited by arc ion plating onto prenitrided AISI 304 stainless steel have been studied by potentiodynamic polarization, electrochemical impedance spectroscopy, and Mott-Schottky measurements in 0.1 M H{sub 2}SO{sub 4} + 0.05 M HCl. The chemical composition of the oxidized surface film atop TiN was analyzed by X-ray photoelectron spectroscopy. Up to 1.2 V/SHE the TiN coating exhibits passive behavior, which is attributed to the formation of a TiO{sub 2}-like film of nanometer thickness which grows linearly with anodic potential at a rate of 2.4 nm/V. Above 1.2 V/SHE enhanced anodic oxidation of TiN is observed at a rate of 17.7 nm/V, and the overall corrosion performance is governed both by the oxidized TiN coating and by a metallic Ti interlayer atop the nitrided stainless steel substrate. At all potentials the TiO{sub 2} film is characterized by relatively high donor densities and is, furthermore, terminated by a hydroxylated surface.

  20. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    SciTech Connect (OSTI)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01T23:59:59.000Z

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

  1. Phase Relationships and Physical Properties of Homologous Compounds in the Zinc OxideIndium Oxide System

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    , are widely used as transparent electrodes for flat panel displays and solar cells. Commercial, thin-film tin

  2. Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films

    E-Print Network [OSTI]

    Reid, Scott A.

    Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films Haiyan Fan August 20, 2002. Revised Manuscript Received November 11, 2002 Thin SnOx films have been synthesized of reducing gases,1-3 and thin films have been synthesized by various means including evapora- tion,4

  3. Growth of CrO[subscript 2] coated single crystalline (SnO[subscript 2]) tin oxide nanowires

    E-Print Network [OSTI]

    Miao, Guo-Xing

    Single crystalline tin oxide (SnO[subscript 2]) nanowires have been synthesized by carbothermal reduction of SnO[subscript 2] nanopowder followed by thermal evaporation of the reduced precursor and growth via the ...

  4. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-06-09T23:59:59.000Z

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  5. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1997-03-04T23:59:59.000Z

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  6. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1996-12-03T23:59:59.000Z

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  7. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1996-01-01T23:59:59.000Z

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  8. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1997-01-01T23:59:59.000Z

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  9. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16T23:59:59.000Z

    and light-emitting diodes). For these electronic devices, transporting electrons to and from the electrode layer is required. In many cases, this electrode must transmit visible light because it is applied directly onto the surface of a transparent...

  10. Effect of ultraviolet radiation exposure on room-temperature hydrogen sensitivity of nanocrystalline doped tin oxide sensor incorporated into microelectromechanical systems device

    SciTech Connect (OSTI)

    Shukla, Satyajit; Agrawal, Rajnikant; Cho, Hyoung J.; Seal, Sudipta; Ludwig, Lawrence; Parish, Clyde [Advanced Materials Processing and Analysis Center (AMPAC) and Mechanical Materials Aerospace Engineering (MMAE) Department, Engineering 381, University of Central Florida, 4000 Central Florida Boulevard, Orlando, Florida 32816 (United States); National Aeronautics and Space Administration (NASA), John F. Kennedy Space Center, Kennedy Space Center (KSC), Florida 32899 (United States)

    2005-03-01T23:59:59.000Z

    The effect of ultraviolet (UV) radiation exposure on the room-temperature hydrogen (H{sub 2}) sensitivity of nanocrystalline indium oxide (In{sub 2}O{sub 3})-doped tin oxide (SnO{sub 2}) thin-film gas sensor is investigated in this article. The present sensor is incorporated into microelectromechanical systems device using sol-gel dip-coating technique. The present sensor exhibits a very high sensitivity, as high as 65 000-110 000, at room temperature, for 900 ppm of H{sub 2} under the dynamic test condition without UV exposure. The H{sub 2} sensitivity is, however, observed to reduce to 200 under UV radiation, which is contrary to the literature data, where an enhanced room-temperature gas sensitivity has been reported under UV radiation. The observed phenomenon is attributed to the reduced surface coverage by the chemisorbed oxygen ions under UV radiation, which is in consonance with the prediction of the constitutive equation, proposed recently by the authors, for the gas sensitivity of nanocrystalline semiconductor oxide thin-film sensors.

  11. Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films

    SciTech Connect (OSTI)

    Sagunova, I. V., E-mail: pcfme@miee.ru; Shevyakov, V. I.; Gavrilov, S. A.; Belov, A. N. [Moscow Institute of Electronic Technology (Technical University) (Russian Federation)

    2010-12-15T23:59:59.000Z

    The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation.

  12. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, Andre

    2013-01-01T23:59:59.000Z

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate).more »These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  13. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Xu, Rui; He, Jian [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Song, Yang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Li, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Zaslavsky, A. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Paine, D. C., E-mail: David-Paine@brown.edu [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-09-01T23:59:59.000Z

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ?10{sup ?2?}??cm{sup 2}, ?3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ?27?cm{sup 2}/V?s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  14. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group; Mendelsberg, Rueben J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group and Molecular Foundry; Zhu, Jiaqi [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Han, Jiecai [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Anders, Andre [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group

    2013-01-01T23:59:59.000Z

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  15. In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

    SciTech Connect (OSTI)

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

    2013-07-01T23:59:59.000Z

    The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

  16. Optical generation of free charge carriers in thin films of tin oxide

    SciTech Connect (OSTI)

    Zhurbina, I. A., E-mail: zhurbina@vega.phys.msu.ru; Tsetlin, O. I.; Timoshenko, V. Yu. [Moscow State University (Russian Federation)

    2011-02-15T23:59:59.000Z

    The methods of infrared absorption spectroscopy and Raman spectroscopy are used to study nanocrystalline SnO{sub x} films (1 {<=} x {<=} 2) prepared by thermal oxidation of metallic tin layers. A monotonic decrease in the transmittance of films in the infrared region has been observed as a result of exposure of the films to light with the wavelength of 380 nm at room temperature. The effect is at a maximum for the samples with x Almost-Equal-To 2 and is observed for {approx}10 min after switching off of illumination. The mentioned variations in optical properties, similarly to those observed in the case of heating of the samples in the dark, are accounted for by an increase in the concentration of free charge carriers (electrons) in nanocrystals of tin dioxide. The data of infrared spectroscopy and the Drude model are used to calculate the concentrations of photogenerated charge carriers ({approx}10{sup 19} cm{sup -3}); variations in these concentrations in the course of illumination and after switching off of illumination are determined. Mechanisms of observed photogeneration of charge carriers in SnO{sub x} films and possible applications of this effect to gas sensors are discussed.

  17. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films

    E-Print Network [OSTI]

    Lin, Chen-Han

    2012-10-19T23:59:59.000Z

    , can be expected. In this study, the ZrHfO high-k MOS capacitors that separately contain nanocrystalline ruthenium oxide (nc-RuO), indium tin oxide (nc-ITO), and zinc oxide (nc-ZnO) have been successfully fabricated by the sputtering deposition method...

  18. High-performance amorphous gallium indium zinc oxide thin-film transistors through N{sub 2}O plasma passivation

    SciTech Connect (OSTI)

    Park, Jaechul; Kim, Sangwook; Kim, Changjung; Kim, Sunil; Song, Ihun; Yin, Huaxiang; Kim, Kyoung-Kok; Lee, Sunghoon; Hong, Kiha; Park, Youngsoo [Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712 (Korea, Republic of); Lee, Jaecheol; Jung, Jaekwan; Lee, Eunha [Analytical Engineering Center, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712 (Korea, Republic of); Kwon, Kee-Won [Department of Semiconductor Systems Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-Do 440-746 (Korea, Republic of)

    2008-08-04T23:59:59.000Z

    Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO{sub 2} passivation layer. To prevent such damages, N{sub 2}O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO{sub 2} deposition. N{sub 2}O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37 cm{sup 2}/V s, a threshold voltage of 0.1 V, a subthreshold swing of 0.25 V/decade, and an I{sub on/off} ratio of 7.

  19. P-28 / D. R. Cairns P-28: The Effect of Thermal Shrinkage on Indium Tin Oxide Coated

    E-Print Network [OSTI]

    Cairns, Darran

    reliable flexible substrates. Plastics based conducting electrodes and thin film transistors (TFTs to fabrication of robust devices. For conducting electrode materials there is an additional constraint as compared to TFTs in that the substrate must also have excellent optical properties. PET and polycarbonate

  20. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen [Department of Materials Science and Engineering, National University of Singapore (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research) (Singapore); Yao, Kui, E-mail: k-yao@imre.a-star.edu.sg, E-mail: msewangj@nus.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research) (Singapore); Wang, John, E-mail: k-yao@imre.a-star.edu.sg, E-mail: msewangj@nus.edu.sg [Department of Materials Science and Engineering, National University of Singapore (Singapore)

    2014-10-20T23:59:59.000Z

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  1. Electra-optic and all-optical phase modulator on an indium tin oxide single-mode waveguide

    E-Print Network [OSTI]

    Chen, Ray

    . Chen and D. Robinson Physica! Optics Corporation, 2.545 West 237th Street, Suite B, Torrance of 15% using 250 mW 355 nm UV light as the activation sources. An 1nzOs:Sn waveguide device workingO, films are widely used in solar energy conversion, in optoelectronics, and in other branches

  2. Nanoscale Electrical Conductivity and Surface Spectroscopic Studies of Indium-Tin Oxide Yish-Hann Liau and Norbert F. Scherer*

    E-Print Network [OSTI]

    Scherer, Norbert F.

    such as flat panel displays, solar cells, and organic electroluminescence devices due to its unique combination

  3. Self-organization of a new fluorous porphyrin and C60 films on indium-tin-oxide electrodew

    E-Print Network [OSTI]

    Liu, Gang-yu

    ­10 The porphyrin­fullerene com- plexes are appealing as materials for solar-energy conversion and energy storage*ad Received (in Cambridge, UK) 22nd April 2008, Accepted 18th July 2008 First published as an Advance Article of C60 make it an excellent p-acceptor molecule.11 Moreover, because of the small reorganization energy

  4. Conductive indium-tin oxide nanowire and nanotube arrays made by electrochemically assisted deposition in template membranes: switching

    E-Print Network [OSTI]

    for charge transport3 and, in photovoltaic systems, more efficient collection of the photogenerated charge consisted of $25­50 nm in size crystalline grains with the cubic crystal structures of In(OH)3 and In2O3

  5. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs

    E-Print Network [OSTI]

    Pearton, Stephen J.

    .16 These transparent conducting oxides may also be used as electrodes in solar cells and flat-panel

  6. Towards an understanding of light activation processes in titanium oxide based inverted organic solar cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    solar cells S. Chambon, E. Destouesse, B. Pavageau, L. Hirsch, and G. Wantz Citation: J. Appl. Phys. 112. Related Articles Power losses in bilayer inverted small molecule organic solar cells Appl. Phys. Lett. 101, 233903 (2012) Thin-film encapsulation of inverted indium-tin-oxide-free polymer solar cells by atomic

  7. Selective Oxidative Degradation of Organic Pollutants by Singlet Oxygen-Mediated Photosensitization: Tin Porphyrin versus C60

    E-Print Network [OSTI]

    Alvarez, Pedro J.

    : Tin Porphyrin versus C60 Aminofullerene Systems Heechan Kim, Wooyul Kim, Yuri Mackeyev,§ Gi-Seon Lee ABSTRACT: This study evaluates the potential application of tin porphyrin- and C60 aminofullerene

  8. amorphous indium-gallium-zinc oxide: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: alloy of composition correspond- ing to the metallic components of the superconduct- ing oxides respectivement. Abstract. - Previous quenching experiments on 2212...

  9. Lithium intercalation in sputter deposited antimony-doped tin oxide thin films: Evidence from electrochemical and optical measurements

    SciTech Connect (OSTI)

    Montero, J., E-mail: jose.montero@angstrom.uu.se; Granqvist, C. G.; Niklasson, G. A. [Department of Engineering Sciences, The A°ngström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden); Guillén, C.; Herrero, J. [Department of Energy, Ciemat, Avda. Complutense 40, Ed. 42, E-28040 Madrid (Spain)

    2014-04-21T23:59:59.000Z

    Transparent conducting oxides are used as transparent electrical contacts in a variety of applications, including in electrochromic smart windows. In the present work, we performed a study of transparent conducting antimony-doped tin oxide (ATO) thin films by chronopotentiometry in a Li{sup +}-containing electrolyte. The open circuit potential vs. Li was used to investigate ATO band lineups, such as those of the Fermi level and the ionization potential, as well as the dependence of these lineups on the preparation conditions for ATO. Evidence was found for Li{sup +} intercalation when a current pulse was set in a way so as to drive ions from the electrolyte into the ATO lattice. Galvanostatic intermittent titration was then applied to determine the lithium diffusion coefficient within the ATO lattice. The electrochemical density of states of the conducting oxide was studied by means of the transient voltage recorded during the chronopotentiometry experiments. These measurements were possible because, as Li{sup +} intercalation took place, charge compensating electrons filled the lowest part of the conduction band in ATO. Furthermore, the charge insertion modified the optical properties of ATO according to the Drude model.

  10. Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells

    SciTech Connect (OSTI)

    Untila, G. G., E-mail: GUntila@mics.msu.su; Kost, T. N.; Chebotareva, A. B.; Timofeyev, M. A. [Moscow State University, Skobel'tsyn Institute of Nuclear Physics (Russian Federation)

    2013-03-15T23:59:59.000Z

    Fluorine-doped indium oxide (IFO) films are deposited onto (pp{sup +})Si and (n{sup +}nn{sup +})Si structures made of single-crystal silicon by ultrasonic spray pyrolysis. The effect of the IFO deposition time and annealing time in an argon atmosphere with methanol vapor on the IFO chemical composition, the photovoltage and fill factor of the Illumination-U{sub oc} curves of IFO/(pp{sup +})Si structures, and the sheet resistance of IFO/(n{sup +}nn{sup +})Si structures, correlating with the IFO/(n{sup +})Si contact resistance, is studied. The obtained features are explained by modification of the properties of the SiO{sub x} transition layer at the IFO/Si interface during deposition and annealing. Analysis of the results made it possible to optimize the fabrication conditions of solar cells based on IFO/(pp{sup +})Si heterostructures and to increase their efficiency from 17% to a record 17.8%.

  11. Nanostructured Tin Dioxide Materials for Gas Sensor Applications

    E-Print Network [OSTI]

    Wooldridge, Margaret S.

    CHAPTER 30 Nanostructured Tin Dioxide Materials for Gas Sensor Applications T. A. Miller, S. D) levels for some species. Tin dioxide (also called stannic oxide or tin oxide) semi- conductor gas sensors undergone extensive research and development. Tin dioxide (SnO2) is the most important material for use

  12. Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

    E-Print Network [OSTI]

    Heo, Jaeyeong

    We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, ...

  13. A comparative study of TiN and TiC: Oxidation resistance and retention of xenon at high temperature and under degraded vacuum

    SciTech Connect (OSTI)

    Gavarini, S.; Bes, R.; Millard-Pinard, N.; Peaucelle, C.; Perrat-Mabilon, A.; Gaillard, C. [Universite de Lyon, Universite Claude Bernard Lyon 1, CNRS/IN2P3, UMR5822, IPNL, 69622 Villeurbanne Cedex (France); Cardinal, S.; Garnier, V. [Universite de Lyon, INSA de Lyon, MATEIS, CNRS UMR 5510, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2011-01-01T23:59:59.000Z

    Dense TiN and TiC samples were prepared by hot pressing using micrometric powders. Xenon species (simulating rare gas fission products) were then implanted into the ceramics. The samples were annealed for 1 h at 1500 deg. C under several degraded vacuums with P{sub O{sub 2}} varying from 10{sup -6} to 2x10{sup -4} mbars. The oxidation resistance of the samples and their retention properties with respect to preimplanted xenon species were analyzed using scanning electron microscopy, grazing incidence x-ray diffraction, Rutherford backscattering spectrometry, and nuclear backscattering spectrometry. Results indicate that TiC is resistant to oxidation and does not release xenon for P{sub O{sub 2{<=}}}6x10{sup -6} mbars. When P{sub O{sub 2}} increases, geometric oxide crystallites appear at the surface depending on the orientation and size of TiC grains. These oxide phases are Ti{sub 2}O{sub 3}, Ti{sub 3}O{sub 5}, and TiO{sub 2}. Apparition of oxide crystallites is associated with the beginning of xenon release. TiC surface is completely covered by the oxide phases at P{sub O{sub 2}}=2x10{sup -4} mbars up to a depth of 3 {mu}m and the xenon is then completely released. For TiN samples, the results show a progressive apparition of oxide crystallites (Ti{sub 3}O{sub 5} mainly) at the surface when P{sub O{sub 2}} increases. The presence of the oxide crystallites is also directly correlated with xenon release, the more oxide crystallites are growing the more xenon is released. TiN surface is completely covered by an oxide layer at P{sub O{sub 2}}=2x10{sup -4} mbars up to 1 {mu}m. A correlation between the initial fine microstructure of TiN and the properties of the growing layer is suggested.

  14. Laser Ablation Synthesis and Electron Transport Studies of Tin Oxide Nanowires**

    E-Print Network [OSTI]

    Zhou, Chongwu

    and solar cells.[7±9] In addition, SnO2 thin films have been extensively studied and used as chemical-dimensional metal oxide nanowires, such as In2O3,[1] ZnO,[2] SnO2,[3] CdO,[4] and CuO[5] nanowires, have attracted

  15. Synthesis of transparent conducting oxide coatings

    DOE Patents [OSTI]

    Elam, Jeffrey W.; Martinson, Alex B. F.; Pellin, Michael J.; Hupp, Joseph T.

    2010-05-04T23:59:59.000Z

    A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.

  16. A high frequency titration of indium with benzenephosphinic acid

    E-Print Network [OSTI]

    Keilt, Francis Xavier

    1960-01-01T23:59:59.000Z

    of the titrant would not indicate any change in the conductance of the solution. Tin, titanium, zirconium, bismuth, molybdenum, uranium, tungsten, and cerium would interfere with the ti. tration of indium. TABLE OF COHTEHTS Page I? XHTRODUCTIOH... from titanium, molybdenum, tungsten, uranium, cerium, zirconium, silver, mercury, tin or bismuth by the recosaended procedure. It is quite possible that in using a high fre- quency method these elements uould not interfere. This would have...

  17. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect (OSTI)

    Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

    2014-07-21T23:59:59.000Z

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100?°C. The a-IGZO TFT exhibit a mobility of 5.13?cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4?mm (strain?=?1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10?V for 1500?s. Thus, this technology is suitable for use in flexible displays.

  18. Electrochromic devices embodying W oxide/Ni oxide tandem films

    SciTech Connect (OSTI)

    Azens, A.; Vaivars, G.; Veszelei, M.; Kullman, L.; Granqvist, C. G.

    2001-06-15T23:59:59.000Z

    Six-layer electrochromic devices of indium tin oxide (ITO)/NiO{sub x}H{sub y}/WO{sub 3}/ZrP-electrolyte/WO{sub 3}/ITO were made by reactive dc magnetron sputtering and lamination. The WO{sub 3} layer between the acidic ZrP-based electrolyte and the NiO{sub x}H{sub y} layer served as optically passive protective layer. The optical inactivity of the protective layer could be understood from arguments based on electron density of states. {copyright} 2001 American Institute of Physics.

  19. X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

    SciTech Connect (OSTI)

    Siah, Sin Cheng, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lee, Sang Woon; Gordon, Roy G. [Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Heo, Jaeyeong [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shibata, Tomohiro; Segre, Carlo U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 606016 (United States)

    2014-06-16T23:59:59.000Z

    We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.

  20. Indium and gallium oxynitrides prepared in the presence of Zn{sup 2+} by ammonolysis of the oxide precursors obtained via the citrate route

    SciTech Connect (OSTI)

    Miyaake, Azumi; Masubuchi, Yuji; Takeda, Takashi [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)] [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan); Kikkawa, Shinichi, E-mail: kikkawa@eng.hokudai.ac.jp [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)] [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)

    2010-04-15T23:59:59.000Z

    Ammonia nitridation of indium and gallium oxide precursors obtained through a soft solution route led to their oxynitrides [In{sub 0.97}{open_square}{sub 0.03}][N{sub 0.92}O{sub 0.08}] at 660 {sup o}C and [Ga{sub 0.89}{open_square}{sub 0.11}][N{sub 0.66}O{sub 0.34}] at 850 {sup o}C, respectively, where {open_square} refers to a In or Ga vacancy. Cation vacancies in their wurtzite-type lattice were eliminated in similar preparations with the co-presence of Zn{sup 2+} by forming complete solid solutions of (InN){sub 1-x}(ZnO){sub x} and (GaN){sub 1-y}(ZnO){sub y}. The optical absorption edge shape was found to be relatively steep at the solid solution limits of x {approx} 0.23 and y {approx} 0.33 compared to the case without zinc.

  1. TiN for MEMS hotplate heaters J.F. Creemer1

    E-Print Network [OSTI]

    Technische Universiteit Delft

    TiN for MEMS hotplate heaters J.F. Creemer1 , P.M. Sarro2 , M. Laros2 , H. Schellevis2 , L, DIMES, ECTM, Mekelweg 4, 2628 CD Delft, Netherlands. Summary: Low-stress TiN has been investigated is required to protect the TiN against oxidation. Keywords: TiN thin films, micro heater, hot plate 1

  2. Hierarchical hollow microsphere and flower-like indium oxide: Controllable synthesis and application as H{sub 2}S cataluminescence sensing materials

    SciTech Connect (OSTI)

    Cai, Pingyang, E-mail: cpyxx@163.com [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Bai, Wei, E-mail: weibaiscu@gmail.com [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Zhang, Lichun, E-mail: lichun0203@yahoo.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Song, Hongjie, E-mail: aurora811005@yahoo.com.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Yingying, E-mail: suyinging@scu.edu.cn [Analytical and Testing Center, Sichuan University, Chengdu, Sichuan 610064 (China)] [Analytical and Testing Center, Sichuan University, Chengdu, Sichuan 610064 (China); Lv, Yi, E-mail: lvy@scu.edu.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)

    2012-09-15T23:59:59.000Z

    Graphical abstract: Hierarchical hollow microsphere and flower-like In{sub 2}O{sub 3} were controllable fabricated through a novel and simple hydrothermal process, and the former showed superior cataluminescence sensing performance to H{sub 2}S. Highlights: ? In{sub 2}O{sub 3} hierarchical hollow sphere were prepared via a hydrothermal route. ? The growth process of In{sub 2}O{sub 3} hierarchical hollow sphere has been investigated. ? The sensor based on prepared In{sub 2}O{sub 3} shows good sensing performance to H{sub 2}S. -- Abstract: In the present work, In{sub 2}O{sub 3} hierarchical hollow microsphere and flower-like microstructure were achieved controllably by a hydrothermal process in the sodium dodecyl sulfate (SDS)-N,N-dimethyl-formamide (DMF) system. XRD, SEM, HRTEM and N{sub 2} adsorption measurements were used to characterize the as-prepared indium oxide materials and the possible mechanism for the microstructures formation was briefly discussed. The cataluminescence gas sensor based on the as-prepared In{sub 2}O{sub 3} was utilized to detect H{sub 2}S concentrations in flowing air. Comparative gas sensing results revealed that the sensor based on hierarchical hollow microsphere exhibited much higher sensing sensitivity in detecting H{sub 2}S gas than the sensor based on flower-like microstructure. The present gas sensor had a fast response time of 5 s and a recovery time of less than 25 s, furthermore, the cataluminescence intensity vs. H{sub 2}S concentration was linear in range of 2–20 ?g mL{sup ?1} with a detection limit of 0.5 ?g mL{sup ?1}. The present highly sensitive, fast-responding, and low-cost In{sub 2}O{sub 3}-based gas sensor for H{sub 2}S would have many practical applications.

  3. In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques

    E-Print Network [OSTI]

    George, Steven M.

    -type semiconductor metal oxide that has many applications in various fields due to its special optical, electrical capacity anode for next gen- eration lithium ion batteries.3,4 SnO2 can also be used as a catalyst typically around 10-2 cm. The adsorp- tion of O2 from air removes the electron charge carriers from

  4. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Indium Under the Nanoscope In this work, Lee et al. investigated the small-scale plastic deformation of indium nanopillars, a previously unstudied material and crystal...

  5. Flexible inverted polymer solar cells with an indium-free tri-layer cathode

    SciTech Connect (OSTI)

    El Hajj, Ahmad; Lucas, Bruno, E-mail: bruno.lucas@unilim.fr; Schirr-Bonnans, Martin; Ratier, Bernard [XLIM-CNRS 7252, Université de Limoges, 123 avenue Albert Thomas, 87060 Limoges (France); Kraft, Thomas M. [XLIM-CNRS 7252, Université de Limoges, 123 avenue Albert Thomas, 87060 Limoges (France); Department of Chemistry, Chernoff Hall, Queen's University, Kingston, Ontario K7L 3N6 (Canada); Torchio, Philippe [Institut Matériaux Microélectronique Nanosciences de Provence, Aix-Marseille Université, IM2NP-CNRS 7334, Domaine Universitaire de Saint-Jérôme, Service 231, 13 397 Marseille Cedex 20 (France)

    2014-01-21T23:59:59.000Z

    Indium tin oxide (ITO)-free inverted polymer solar cells (PSCs) have been fabricated without the need of an additional electron transport layer. The indium-free transparent electrode consists of a tri-layer stack ZnO (30?nm)/Ag (14?nm)/ZnO (30?nm) deposited on glass and plastic substrates via ion-beam sputtering. The tri-layer electrodes exhibit similar physical properties to its ITO counterpart, specifically yielding high transmittance and low resistivity (76.5% T at 550?nm, R{sub sq} of 8 ?/?) on plastic substrates. The novel tri-layer electrode allows for the fabrication of inverted PSCs without the additional ZnO interfacial layer commonly deposited between ITO and the photoactive layer. This allows for the preparation of thinner plastic solar cells using less material than conventional architectures. Initial studies involving the newly realized architecture (tri-layer electrode/P3HT:PCBM/PEDOT:PSS/Ag) have shown great promise for the transition from ITO to other viable electrodes in organic electronics.

  6. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

    SciTech Connect (OSTI)

    Fakhri, M.; Theisen, M.; Behrendt, A.; Görrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)

    2014-06-23T23:59:59.000Z

    Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.

  7. Modeling tin whisker growth.

    SciTech Connect (OSTI)

    Weinberger, Christopher Robert

    2013-08-01T23:59:59.000Z

    Tin, lead, and lead-tin solders are the most commonly used solders due to their low melting temperatures. However, due to the toxicity problems, lead must now be removed from solder materials. This has lead to the re-emergence of the issue of tin whisker growth. Tin whiskers are a microelectronic packaging issue because they can lead to shorts if they grow to sufficient length. However, the cause of tin whisker growth is still not well understood and there is lack of robust methods to determine when and if whiskering will be a problem. This report summarizes some of the leading theories on whisker growth and attempts to provide some ideas towards establishing the role microstructure plays in whisker growth.

  8. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect (OSTI)

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-08-04T23:59:59.000Z

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%)?+?ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  9. Microstructure of laser-fired, sol-gel-derived tungsten oxide films

    SciTech Connect (OSTI)

    Taylor, D.J.; Birnie, D.P. III [Univ. of Arizona, Tucson, AZ (United States)] [Univ. of Arizona, Tucson, AZ (United States); Cronin, J.P. [Donnelly Corp., Tucson, AZ (United States)] [Donnelly Corp., Tucson, AZ (United States); Allard, L.F. Jr. [Oak Ridge National Lab, TN (United States)] [Oak Ridge National Lab, TN (United States)

    1996-07-01T23:59:59.000Z

    Half-micron-thick tungsten oxide films were deposited by the sol-gel method onto indium tin oxide (ITO) coated soda lime silicate substrates. Following a 100 {degrees}C prebake, the samples were fired with a carbon dioxide laser at a variety of power densities and translation speeds. The laser-fired tungsten oxide films were characterized by spectrophotometry, electrochemistry, multiangle ellipsometry, and transmission electron microscopy and compared to similar furnace-fired films. The data showed an increase in electrochromic response with increased firing temperature up to the point where crystallization of the tungsten oxide retarded electrochromic response. A window with graded electrochromic properties was made by laser firing. 35 refs., 8 figs., 1 tab.

  10. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    DOE Patents [OSTI]

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04T23:59:59.000Z

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  11. JOURNAL DE PHYSIQUE Colloque C6, supplment au no 12, Tome 35, Dcembre 1974,page C6-393 SUPERCONDUCTIVITY AND LATTICE DYNAMICS OF GRANULAR TIN (*)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -393 SUPERCONDUCTIVITY AND LATTICE DYNAMICS OF GRANULAR TIN (*) S. AKSELROD, M. PASTERNAK Physics Department, Tel was measured in samples of 4 5 8 Sn grains embedded in a tin-oxide matrix. The Debye temperature of the same

  12. Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells

    SciTech Connect (OSTI)

    Ng, A.; Liu, X.; Sun, Y. C.; Djuriši?, A. B. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. (China); Ng, A. M. C. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China and Nanostructure Institute for Energy and Environmental Research, Division of Physical Sciences, South University of Science and Technology of China, Shenzhen (China); Chan, W. K. [Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. (China)

    2013-12-04T23:59:59.000Z

    We performed a systematic study of the effect of electron collecting metal oxide layer on the performance of P3HT: PCBM solar cells. Zinc oxide (ZnO) or titanium dioxide (TiO{sub 2}) buffer layers were prepared by either e-beam evaporation or solution processing method. We also compared the photovoltaic performance of inserting the buffer layer between indium tin oxide (ITO) and the polymer layer for the inverted structure (ITO/ ZnO or TiO{sub 2}/P3HT:PCBM/V{sub 2}O{sub 5}/Au) as well as inserting the buffers layers between the polymer and the aluminum electrode for the conventional structure (ITO/V{sub 2}O{sub 5}/P3HT:PCBM/ZnO or TiO{sub 2}/Al). The results are shown in detail.

  13. INDIUM--1997 37.1 By Robert D. Brown, Jr.

    E-Print Network [OSTI]

    INDIUM--1997 37.1 INDIUM By Robert D. Brown, Jr. There was no known production of indium at domestic mines, and none was recovered from ores in the United States in 1997. Domestic indium production and Rhode Island, were the major producers of indium metal and indium products in 1997. Several smaller

  14. Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray

    E-Print Network [OSTI]

    Fadley, Charles

    Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means (HXPS, HAXPES) is applied to a thick (100 A° ) film of a metal gate TiN grown on top of a Si/MoSi2 of TiN, as well as the buried interface between TiN and the native oxide on top of the mirror

  15. Electrochemical and electrochromic properties of niobium oxide thin films fabricated by pulsed laser deposition

    SciTech Connect (OSTI)

    Fu, Z.W.; Kong, J.J.; Qin, Q.Z.

    1999-10-01T23:59:59.000Z

    Niobium oxide thin films have been successfully fabricated on the indium-tin oxide coated glasses by pulsed laser deposition in an O{sub 3}/O{sub 2} gas mixture. Films are characterized by X-ray diffraction and Raman spectrometry. Electrochemical and electrochromic properties of Nb{sub 2}O{sub 5} films are examined by cyclic voltammogram and potential step coupled with an in situ charge-coupled device spectrophotometer. The unique characteristics of absorption spectra of Nb{sub 2}O{sub 5} films are observed for the first time, and the optical absorption from the trapped electrons in the surface states plays an important role in the electrochromic phenomenon.

  16. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

    2011-11-15T23:59:59.000Z

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  17. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    SciTech Connect (OSTI)

    Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

    2012-01-01T23:59:59.000Z

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  18. Discovery of the Tin Isotopes

    E-Print Network [OSTI]

    S. Amos; M. Thoennessen

    2010-09-08T23:59:59.000Z

    Thirty-eight tin isotopes have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  19. Diffusion of nitrogen implanted in titanium nitride (TiN1-x) F. Abautret and P. Eveno

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1113 Diffusion of nitrogen implanted in titanium nitride (TiN1- x) F. Abautret and P. Eveno The diffusion of nitrogen 15, implanted in non-stoichiometric titanium nitride single-crystals (03B4 - TiN1-x on i usion m m ri es compared with the oxides. No data are available about nitrogen (or titanium

  20. On the solar abundance of indium

    E-Print Network [OSTI]

    N. Vitas; I. Vince; M. Lugaro; O. Andriyenko; M. Gosic; R. J. Rutten

    2007-11-14T23:59:59.000Z

    The generally adopted value for the solar abundance of indium is over six times higher than the meteoritic value. We address this discrepancy through numerical synthesis of the 451.13 nm line on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure and Zeeman splitting in detail. The results, as well as a re-appraisal of indium nucleosynthesis, suggest that the solar indium abundance is close to the meteoritic value, and that some unidentified ion line causes the 451.13 nm feature in the quiet-sun spectrum.

  1. Highly efficient blue organic light emitting devices with indium...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    efficient blue organic light emitting devices with indium-free transparent anode on flexible substrates. Highly efficient blue organic light emitting devices with indium-free...

  2. Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film Deposition by Laser Back Ablation. Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film...

  3. Method of preparing doped oxide catalysts for lean NOx exhaust

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-09T23:59:59.000Z

    The lean NOx catalyst includes a substrate, an oxide support material, preferably .gamma.-alumina deposited on the substrate and a metal or metal oxide promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium cerium, and vanadium, and oxides thereof, and any combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between 80 and 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to about 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  4. Tinning/Trimming Robot System

    SciTech Connect (OSTI)

    Fureigh, M.L.

    1993-02-01T23:59:59.000Z

    In a new surface mount assembly area at AlliedSignal Inc., Kansas City Division (KCD), a tinning/trimming robot system tins and trims the gold-plated leads of surface mount technology (SMT) transistors. The KCD-designed system uses a Unimation PUMA 260 robot, a General Production Devices SP-2000 solder pot; water-soluble Blackstone No. 2508 flux; and a Virtual Industries high-temperature, ESD-conductive, miniature suction cup. After the manual cleaning operation, the processed SMT transistors go to the QUADSTAR Automated Component Placement System for a Radar Logic Assembly. The benefits are reductions in the cost of nonconformance, worker fatigue, and standard hours.

  5. Part I Taxpayer Identification Number (TIN) Enter your TIN in the appropriate box. The TIN provided must match the name given on the "Name" line

    E-Print Network [OSTI]

    He, Chuan

    Part I Taxpayer Identification Number (TIN) Enter your TIN in the appropriate box. The TIN provided). If you do not have a number, see How to get a TIN on page 3. Social security number ­ ­ Route are not required to sign the certification, but you must provide your correct TIN. See the instructions on page 4

  6. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from a NewCuneo Matthew1,Mechanical Behavior of Indium

  7. Metal/metal oxide doped oxide catalysts having high deNOx selectivity for lean NOx exhaust aftertreatment systems

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-16T23:59:59.000Z

    A lean NOx catalyst and method of preparing the same is disclosed. The lean NOx catalyst includes a ceramic substrate, an oxide support material, preferably .gamma.-alumina, deposited on the substrate and a metal promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium, cerium, vanadium, oxides thereof, and combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between about 80 to 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  8. Effect of Mn doping on the structural, morphological, optical...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films. Effect of Mn doping on the structural, morphological, optical and magnetic...

  9. TIN--1998 78.1 By James F. Carlin, Jr.

    E-Print Network [OSTI]

    to be the world's largest producer of secondary tin. Tin metal recovered from new tinplate scrap and used tin cans from the various scrapped alloys of tin and recycled in those same alloy industries. Secondary tin from%; electrical, 22%; transportation, 13%; construction, 11%; and other, 32%. The estimated value of primary metal

  10. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

    2011-01-02T23:59:59.000Z

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology. The primary objective of this project was to develop a commercially viable process for 'Substrates' (Substrate/ undercoat/ TCO topcoat) to be used in production of OLED devices (lamps/luminaries/modules). This project focused on using Arkema's recently developed doped ZnO technology for the Fenestration industry and applying the technology to the OLED lighting industry. The secondary objective was the use of undercoat technology to improve light extraction from the OLED device. In optical fields and window applications, technology has been developed to mitigate reflection losses by selecting appropriate thicknesses and refractive indices of coatings applied either below or above the functional layer of interest. This technology has been proven and implemented in the fenestration industry for more than 15 years. Successful completion of

  11. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sören; Jessen, Frank; ,; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

    2011-01-02T23:59:59.000Z

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology.

  12. Ion emission and expansion in laser-produced tin plasma

    E-Print Network [OSTI]

    Burdt, Russell Allen

    2011-01-01T23:59:59.000Z

    scale length laser-produced tin plasmas, PhD dissertation,and Expansion in Laser-Produced Tin Plasma A dissertationof a CO 2 laser pulse with tin-based plasma for an extreme

  13. Why is Tin so soft?

    E-Print Network [OSTI]

    J. Piekarewicz

    2007-05-10T23:59:59.000Z

    The distribution of isoscalar monopole strength in the neutron-even 112-124Sn-isotopes has been computed using a relativistic random-phase-approximation approach. The accurately-calibrated model used here (``FSUGold'') has been successful in reproducing both ground-state observables as well as collective excitations - including the giant monopole resonance (GMR) in 90Zr, 144Sm, and 208Pb. Yet this same model significantly overestimates the GMR energies in the Sn isotopes. It is argued that the question of ``Why is Tin so soft?'' becomes an important challenge to the field and one that should be answered without sacrificing the success already achieved by several theoretical models.

  14. Copper-silver-titanium-tin filler metal for direct brazing of structural ceramics

    DOE Patents [OSTI]

    Moorhead, Arthur J. (Knoxville, TN)

    1988-04-05T23:59:59.000Z

    A method of joining ceramics and metals to themselves and to one another at about 800.degree. C. is described using a brazing filler metal consisting essentially of 35 to 50 at. % copper, 40 to 50 at. % silver, 1 to 15 at. % titanium, and 2 to 8 at. % tin. This method produces strong joints that can withstand high service temperatures and oxidizing environments.

  15. Artificial fireball generation via an erosive discharge with tin alloy electrodes

    E-Print Network [OSTI]

    Pirozerski, A L; Lebedeva, E L; Borisov, B F; Khomutova, A S; Mavlonazarov, I O

    2015-01-01T23:59:59.000Z

    We propose a method for generation of long-living autonomous fireball-like objects via a pulse erosive discharge between tin alloy electrodes. The objects are similar to the natural ball lightning in some properties, in particular, they have high energy density and are capable to burn through thin metal foils. The dynamics of the objects are studied using high speed videorecording. During their lifetime the fireballs generate aerogel threads. The studies of their structure by scanning electron microscopy reveal the presence of tin oxide nanoparticles and nanowhiskers.

  16. Structural characterization and electronic structure of laser treated TiN thin film

    SciTech Connect (OSTI)

    Soni, Sheetal; Nair, K. G. M.; Phase, D. M.; Gupta, Ratnesh [School of Instrumentation, Devi Ahilya University, Khandwa road, Indore-452001 (India); Material Science Division, Indira Gandhi Center for Atomic Research, Kalpakkam 603 102 (India); UGC-DAE CSR, Indore Center, Khandwa Road, Indore 452 017 (India); School of Instrumentation, Devi Ahilya University, Khandwa road, Indore-452001 (India)

    2012-06-05T23:59:59.000Z

    TiN thin films prepared by laser treatment using Kr-F excimer laser in the controlled atmosphere. The depth distribution and composition of nitrogen and contaminated oxygen have been determined by non-Rutherford proton backscattering using 1.7 MeV Tendetron accelerator. The electronic structure of TiN thin film have been characterized by resonant photoelectron spectroscopy using indus-I synchrotron radiation. Specifically, complex resonance profile that shows the enhancement at 45 eV which is consistent with the resonant photoemission of Ti 3d states involved in the Titanium nitride and oxide.

  17. A Low Temperature Fully Lithographic Process For Metal–Oxide Field-Effect Transistors

    E-Print Network [OSTI]

    Sodini, Charles G.

    We report a low temperature ( ~ 100à °C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene, ...

  18. TIN--1999 78.1 By James F. Carlin, Jr.

    E-Print Network [OSTI]

    of primary metal consumed domestically was about $310 million. Industry stocks remained steady (tables 2 secondary tin was produced from various scrapped alloys of tin and recycled in those same alloy industries. In 1999, however, tin metal recovered from new tinplate scrap and used tin cans was the only type

  19. TIN--2002 78.1 By James F. Carlin, Jr.

    E-Print Network [OSTI]

    TIN--2002 78.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D, international data coordinator. Tin has not been mined in the United States since 1993; consequently, the country is mostly reliant on imports and recycling for its tin requirements. Twenty-five firms consumed 91

  20. TIN--2003 77.1 By James F. Carlin, Jr.

    E-Print Network [OSTI]

    TIN--2003 77.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D, international data coordinator. Tin has not been mined in the United States since 1993; consequently, the country is mostly reliant on imports and recycling for its tin needs. Twenty-five firms consumed 80

  1. Methane-assisted combustion synthesis of nanocomposite tin dioxide materials

    E-Print Network [OSTI]

    Wooldridge, Margaret S.

    Methane-assisted combustion synthesis of nanocomposite tin dioxide materials S.D. Bakrania *, C., Ann Arbor, MI 48109-2125, USA Abstract Combustion synthesis of tin dioxide (SnO2) was studied using: Combustion synthesis; Nanoparticles; Tin dioxide; Metals 1. Introduction Tin dioxide (SnO2) is the most

  2. TIN--2000 79.1 By James F. Carlin, Jr.

    E-Print Network [OSTI]

    TIN--2000 79.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D, international data coordinator. Tin was not mined in the United States during 2000. Twenty- five firms consumed 86% of reported primary tin used domestically. The major uses were as follows: electrical, 24%; cans

  3. Therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Mausner, Leonard F. (Stony Brook, NY); Atkins, Harold L. (Setauket, NY)

    2003-01-01T23:59:59.000Z

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

  4. (Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S.

    E-Print Network [OSTI]

    176 TIN (Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms used about 92% of the primary tin consumed

  5. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S.

    E-Print Network [OSTI]

    174 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms used about 80% of the primary tin consumed

  6. (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1998, there was no domestic tin mine production. Production of tin at the only U.S.

    E-Print Network [OSTI]

    180 TIN (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1998, there was no domestic tin mine production. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms consumed about 85% of the primary tin. The major uses

  7. (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1997, there was no domestic tin mine production. Production of tin at the only

    E-Print Network [OSTI]

    178 TIN (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1997, there was no domestic tin mine production. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms consumed about 85% of the primary tin. The major uses

  8. (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1999, there was no domestic tin mine production. Production of tin at the only

    E-Print Network [OSTI]

    176 TIN (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1999, there was no domestic tin mine production. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms consumed about 97% of the primary tin. The major uses

  9. (Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S.

    E-Print Network [OSTI]

    174 TIN (Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms used about 77% of the primary tin consumed

  10. (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1996, there was no domestic tin mine production. Production of tin at the only U.S.

    E-Print Network [OSTI]

    178 TIN (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1996, there was no domestic tin mine production. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms consumed about 85% of the primary tin. The major uses

  11. Tin electroplating/stripping evaluation. Topical report

    SciTech Connect (OSTI)

    McHenry, M.R.

    1995-08-01T23:59:59.000Z

    An evaluation was conducted to determine possible replacement chemistries for electroplating and stripping of tin-lead. The driver for this project was two-fold. Our first goal dealt with hazardous waste reduction. It was desired to eliminate lead (a heavy metal) from the electroplating process and thiourea (a known carcinogen) from the stripping process. We also sought to reduce the cost of nonconformance (CONC) realized by this process in the form of rough plating, broken paths, poor solderability, and overetching. Three suppliers` tin chemistries were evaluated as replacements for electroplating and stripping of tin-lead. Based on preliminary testing, one chemistry was chosen, evaluated, and approved for production use.

  12. Reduction And Stabilization (Immobilization) Of Pertechnetate To An Immobile Reduced Technetium Species Using Tin(II) Apatite

    SciTech Connect (OSTI)

    Duncan, J. B.

    2012-11-02T23:59:59.000Z

    Synthetic tin(II)apatite reduces pertechnetate from the mobile +7 to a non-mobile oxidation state and sequesters the technetium, preventing re-oxidization to mobile +7 state under acidic or oxygenated conditions. Previous work indicated technetium reacted Sn(II)apatite can achieve an ANSI leachability index of 12.8 in Cast Stone. An effect by pH is observed on the distribution coefficient, the highest distribution coefficient being l70,900 observed at pH levels of 2.5 to 10.2. The tin apatite was resistant to releasing technetium under test conditions.

  13. Time-resolved visible and extreme ultraviolet spectroscopy of laser-produced tin plasma

    E-Print Network [OSTI]

    O'Shay, Joseph Fred

    2007-01-01T23:59:59.000Z

    Characterization of laser-produced tin plasma. Part I: XUVof laser-produced tin plasma. Part II: Radiation-expanding laser-produced tin plasma,” Eighth International

  14. Extreme-ultraviolet radiation transport in small scale length laser-produced tin plasmas

    E-Print Network [OSTI]

    Sequoia, Kevin Lamar Williams

    2009-01-01T23:59:59.000Z

    emissions from laser-produced tin plasmas. Proceedings ofRadiation from Laser- Produced Tin Plasmas. Physical Reviewspectra of xenon and tin discharges. Physical Review E,

  15. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2008. Indium-containing

    E-Print Network [OSTI]

    : Data on the quantity of secondary indium recovered from scrap were not available. Indium is most loop--from collection of scrap to production of secondary materials--now takes less than 30 days. ITO to dissolve the ITO, from which the indium is recovered. Indium recovery from tailings was thought to have

  16. Harmonic generation from indium-rich plasmas

    SciTech Connect (OSTI)

    Ganeev, R. A.; Kulagin, I. A. [Akadempribor Scientific Association, Academy of Sciences of Uzbekistan, Tashkent 700125 (Uzbekistan); Singhal, H.; Naik, P. A.; Arora, V.; Chakravarty, U.; Chakera, J. A.; Khan, R. A.; Raghuramaiah, M.; Gupta, P. D. [Laser Plasma Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Redkin, P. V. [Samarkand State University, Samarkand 703004 (Uzbekistan)

    2006-12-15T23:59:59.000Z

    An experimental study of high-order harmonic generation in In, InSb, InP, and InGaP plasmas using femtosecond laser radiation with variable chirp is presented. Intensity enhancement of the 13th and 21st harmonics compared to the neighboring harmonics by a factor of 200 and 10, respectively, is observed. It is shown that the harmonic spectrum from indium-containing plasma plumes can be considerably modified by controlling the chirp of the driving laser pulse.

  17. aluminium gallium indium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

  18. aluminum gallium indium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

  19. amorphous indium gallium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

  20. T thong tin ve chat lng khong kh trong nha

    E-Print Network [OSTI]

    Tôø thoâng tin veà chaát löôïng khoâng khí trong nhaø Chaát löôïng khoâng khí khoâng toát trong ñöôïc soáng khoûe maïnh. Neáu muoán bieát theâm thoâng tin veà chaát löôïng khoâng khí vaø söùc khoûe

  1. TIN DOCT 2002 Issue 60 S$5.00 Anniversary

    E-Print Network [OSTI]

    Aslaksen, Helmer

    TIN DÌOCT 2002 Issue 60 S$5.00 Anniversary Special Feature- Egypt Calendar The Pyramids The Sphinx Andromeda Aristotle Ancient Greek astronomy #12;TIN DÌ Content Editor: Kepler Letters Consultant: Newton

  2. Design and fabrication of a tin-sulfide annealing furnace

    E-Print Network [OSTI]

    Lewis, Raymond (Raymond A.)

    2011-01-01T23:59:59.000Z

    A furnace was designed and its heat transfer properties were analyzed for use in annealing thin-film tins-ulfide solar cells. Tin sulfide has been explored as an earth abundant solar cell material, and the furnace was ...

  3. Microwave plasma CVD of NANO structured tin/carbon composites

    DOE Patents [OSTI]

    Marcinek, Marek (Warszawa, PL); Kostecki, Robert (Lafayette, CA)

    2012-07-17T23:59:59.000Z

    A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

  4. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shivaraman, Ravi; Speck, James S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2014-09-21T23:59:59.000Z

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  5. TIN--2001 78.1 By James F. Carlin, Jr.

    E-Print Network [OSTI]

    TIN--2001 78.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D firms consumed 83% of the reported primary tin used domestically in 2001. The major uses were as follows. The recycling rate for steel cans was 58% in 2001 and 2000, compared with 56% in 1995 and 15% in 1988

  6. NISTIR 7078 TIN Techniques for Data Analysis and Surface Construction

    E-Print Network [OSTI]

    Bernal, Javier

    NISTIR 7078 TIN Techniques for Data Analysis and Surface Construction Building and Fire Research Institute of Standards and Technology #12;NISTIR 7078 TIN Techniques for Data Analysis and Surface This report addresses the task of meshing point clouds by triangulated elevated surfaces referred to as TIN

  7. Head Knowledge: Summary (Segment from the Tin Shed essay)

    E-Print Network [OSTI]

    O'Laughlin, Jay

    Head Knowledge: Summary (Segment from the Tin Shed essay) While certainly much more nuanced than would declare that it's to be discovered outside Tin Shed, viewed from the wooden bench. Reality of reliability and validity (Frey 1994:95-104). While traveling outside the Tin Shed, systematic analysis

  8. Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films

    DOE Patents [OSTI]

    Giolando, Dean M.

    2003-09-30T23:59:59.000Z

    Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

  9. Microstructural development and mechanical behavior of eutectic bismuth-tin and eutectic indium-tin in response to high temperature deformation

    SciTech Connect (OSTI)

    Goldstein, J.L.F. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering; [Lawrence Berkeley Lab., CA (United States)

    1993-11-01T23:59:59.000Z

    The mechanical behavior and microstructure of eutectic Bi-Sn and In-Sn solders were studied in parallel in order to better understand high temperature deformation of these alloys. Bi-Sn solder joints were made with Cu substrates, and In-Sn joints were made with either Cu or Ni substrates. The as-cast microstructure of Bi-Sn is complex regular, with the two eutectic phases interconnected in complicated patterns. The as-cast microstructure of In-Sn depends on the substrate. In-Sn on Cu has a non-uniform microstructure caused by diffusion of Cu into the solder during sample preparation, with regions of the Sn-rich {gamma} phase imbedded in a matrix of the In-rich {beta} phase. The microstructure of In-Sn on Ni is uniform and lamellar and the two phases are strongly coupled. The solders deform non-uniformly, with deformation concentrating in a band along the length of the sample for Bi-Sn and In-Sn on Cu, though the deformation is more diffuse in In-Sn than in Bi-Sn. Deformation of In-Sn on Ni spreads throughout the width of the joint. The different deformation patterns affect the shape of the stress-strain curves. Stress-strain curves for Bi-Sn and In-Sn on Cu exhibit sharp decays in the engineering stress after reaching a peak. Most of this stress decay is removed for In-Sn on Ni. The creep behavior of In-Sn also depends on the substrate, with the creep deformation controlled by the soft P phase of the eutectic for In-Sn on Cu and controlled by the harder {gamma} phase for In-Sn on Ni. When In-Sn on Ni samples are aged, the microstructure coarsens and changes to an array of {gamma} phase regions in a matrix of the {beta} phase, and the creep behavior changes to resemble that of In-Sn on Cu. The creep behavior of Bi-Sn changes with temperature. Two independent mechanisms operate at lower temperatures, but there is still some question as to whether one or both of these, or a third mechanism, operates at higher temperatures.

  10. Coating Single-Walled Carbon Nanotubes with Tin Oxide

    E-Print Network [OSTI]

    Zettl, Alex

    , and Pt by electron-beam evaporation or electroless metal deposition.2,5,11 Single amine-functionalized Cd@Rice are used in this work. These SWCNTs are produced by a laser ablation method using nickel as a catalyst

  11. An evaluation of indium antimonide quantum well transistor technology

    E-Print Network [OSTI]

    Liu, Jingwei, M. Eng. Massachusetts Institute of Technology

    2006-01-01T23:59:59.000Z

    Motivated by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its ...

  12. The natural and industrial cycling of indium in the environment

    E-Print Network [OSTI]

    White, Sarah Jane O'Connell

    2012-01-01T23:59:59.000Z

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling ...

  13. DESIGN OF A 10-T SUPERCONDUCTING DIPOLE MAGNET USING NIOBIUM-TIN CONDUCTOR

    E-Print Network [OSTI]

    Taylor, C.

    2011-01-01T23:59:59.000Z

    NIOBIUM-TIN CONOOCTOR' C. Taylor, R. Meuser. S. Caspi. W.NIOBIUM-TIN CONDUCTOR C. Taylor, R. Meuser, S. Caspi, W.NIOBIUM-TIN CONDUCTOR* C. Taylor, R. Meuser, S. Caspi, W.

  14. State of the Art Power-in Tube Niobium-Tin Superconductors

    E-Print Network [OSTI]

    Godeke, A.

    2011-01-01T23:59:59.000Z

    Development of ECN-type Niobium-Tin wire towards smallerD. Elen, Development of Niobium-Tin conductors at ECN, Adv.Simulations of the effects of tin composition gradients on

  15. DESIGN OF A 10-T SUPERCONDUCTING DIPOLE MAGNET USING NIOBIUM-TIN CONDUCTOR

    E-Print Network [OSTI]

    Taylor, C.

    2011-01-01T23:59:59.000Z

    DIPOLE HAGNET USING NIOBIUM-TIN CONOOCTOR' C. Taylor, R.DIPOLE MAGNET USING NIOBIUM-TIN CONDUCTOR C. Taylor, R.slid tooling for the niobium- tin magnet .sre on halld, and

  16. Ambient gas effects on the dynamics of laser-produced tin plume expansion

    E-Print Network [OSTI]

    Harilal, S S; O'Shay, B; Tillac, M S; Tao, Y

    2006-01-01T23:59:59.000Z

    mitigation in a laser-produced tin plasma is one of the mostambient pressure, the tin species with kinetic Downloaded 19Sn + species ejected by the tin plume exhibits a Downloaded

  17. Influence of spot size on propagation dynamics of laser-produced tin plasma

    E-Print Network [OSTI]

    Harilal, S S

    2007-01-01T23:59:59.000Z

    ?Color online? Images of the tin plume recorded with 280 ? mdynamics of laser-produced tin plasma S. S. Harilal a?dynamics of an expanding tin plume for various spot sizes

  18. LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia

    E-Print Network [OSTI]

    Yong, Foo Nun

    2006-01-01T23:59:59.000Z

    Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase ...

  19. Measurements of Modulus of Elasticity and Thermal Contraction of Epoxy Impregnated Niobium-Tin and Niobium-Titanium Composites

    E-Print Network [OSTI]

    Chow, K.P.

    2011-01-01T23:59:59.000Z

    Niobium-Tin and Niobium-Titanium Composites Ken P. Chow andniobium· tin and niobium· titanium superconductor. Accurate

  20. Measurements of Modulus of Elasticity and Thermal Contraction of Epoxy Impregnated Niobium-Tin and Niobium-Titanium Composites

    E-Print Network [OSTI]

    Chow, K.P.

    2011-01-01T23:59:59.000Z

    of Epoxy Impregnated Niobium-Tin and Niobium-Titaniumwith epoxy impregnated niobium· tin and niobium· titanium

  1. Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

    SciTech Connect (OSTI)

    Li, Liuan; Kishi, Akinori; Shiraishi, Takayuki; Jiang, Ying; Wang, Qingpeng; Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506 (Japan)

    2014-03-15T23:59:59.000Z

    This study evaluates the thermal stability of different refractory metal nitrides used as Schottky electrodes on GaN. The results demonstrate that TiN, MoSiN, and MoN possess good rectification and adhesion strength, with barrier heights of 0.56, 0.54, and 0.36?eV, respectively. After thermal treatment at 850?°C for 1?min, the TiN and MoN electrodes still exhibit rectifying characteristics, while the MoSiN degrades to an ohmic-like contact. For further study, several TiN films are deposited using different N{sub 2}/Ar reactive/inert sputtering gas ratios, thereby varying the nitrogen content present in the sputtering gas. Ohmic-like contact is observed with the pure Ti contact film, and Schottky characteristics are observed with the samples possessing nitrogen in the film. The average Schottky barrier height is about 0.5?eV and remains virtually constant with varying nitrogen deposition content. After examining Raman spectra and x-ray photoelectron spectroscopy results, the increase in the film resistivity after thermal treatment is attributed to oxidation and/or nitridation. Films deposited with a medium (40% and 60%) nitrogen content show the best film quality and thermal stability.

  2. Size-Dependent Detachment-Limited Decay Kinetics of Two-Dimensional TiN Islands on TiN(111)

    E-Print Network [OSTI]

    Gall, Daniel

    Size-Dependent Detachment-Limited Decay Kinetics of Two-Dimensional TiN Islands on TiN(111) S kinetics of two-dimensional TiN adatom and vacancy islands on atomically smooth TiN(111) terraces. We numbers: 68.35.Md, 68.35.Fx, 68.37.Ef, 82.45.Mp B1-NaCl structure TiN is widely used as a hard wear

  3. Spectral Control of Emission from Tin Doped Targets for Extreme Ultraviolet Lithography

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    control of emissions from tin doped targets for extremearray (UTA) emission around 13.5 nm from solid density tinand tin doped foam targets. Extreme ultraviolet (EUV)

  4. Molten tin reprocessing of spent nuclear fuel elements

    DOE Patents [OSTI]

    Heckman, Richard A. (Castro Valley, CA)

    1983-01-01T23:59:59.000Z

    A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support the liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

  5. Influence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmas

    E-Print Network [OSTI]

    Harilal, S. S.

    Influence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmas ultraviolet (EUV) radiation from a laser pro- duced tin plasma has been studied extensively in recent years. The need for 13.5 nm wavelength and a regenerative target lead to the use of tin droplet targets.10 Hot tin

  6. Modeling of EUV Emission and Conversion Efficiency from Laser-Produced Tin Plasmas for Nanolithography

    E-Print Network [OSTI]

    Harilal, S. S.

    Modeling of EUV Emission and Conversion Efficiency from Laser-Produced Tin Plasmas simulation tools. Here, we investigate the radiative properties of tin and tin-doped foam plasmas heated by 1 at intermediate focus (IF). Laser-generated plasmas containing lithium, xenon or tin are potentially good emission

  7. Low-Energy Electron Microscopy Studies of Interlayer Mass Transport Kinetics on TiN(111)

    E-Print Network [OSTI]

    Israeli, Navot

    Low-Energy Electron Microscopy Studies of Interlayer Mass Transport Kinetics on TiN(111) S annealing of three-dimensional (3D) TiN(111) mounds, consisting of stacked 2D islands, at temperatures-limited decay of 2D TiN islands on atomically-flat TiN(111) terraces [Phys. Rev. Lett. 89 (2002) 176102

  8. Interim Results from a Study of the Impacts of Tin (II) Based Mercury Treatment in a Small Stream Ecosystem: Tims Branch, Savannah River Site

    SciTech Connect (OSTI)

    Looney, Brian [Savannah River National Laboratory (SRNL); BryanJr., Larry [Savannah River Ecology Laboratory; Mathews, Teresa J [ORNL; Peterson, Mark J [ORNL; Roy, W Kelly [ORNL; Jett, Robert T [ORNL; Smith, John G [ORNL

    2012-03-01T23:59:59.000Z

    A research team is assessing the impacts of an innovative mercury treatment system in Tims Branch, a small southeastern stream. The treatment system, installed in 2007, reduces and removes inorganic mercury from water using tin(II) (stannous) chloride addition followed by air stripping. The system results in discharge of inorganic tin to the ecosystem. This screening study is based on historical information combined with measurements of contaminant concentrations in water, fish, sediment, biofilms and invertebrates. Initial mercury data indicate that first few years of mercury treatment resulted in a significant decrease in mercury concentration in an upper trophic level fish, redfin pickerel, at all sampling locations in the impacted reach. For example, the whole body mercury concentration in redfin pickerel collected from the most impacted pond decreased approximately 72% between 2006 (pre-treatment) and 2010 (post-treatment). Over this same period, mercury concentrations in the fillet of redfin pickerel in this pond were estimated to have decreased from approximately 1.45 {micro}g/g (wet weight basis) to 0.45 {micro}g/g - a decrease from 4.8x to 1.5x the current EPA guideline concentration for mercury in fillet (0.3 {micro}g/g). Thermodynamic modeling, scanning electron microscopy, and other sampling data for tin suggest that particulate tin (IV) oxides are a significant geochemical species entering the ecosystem with elevated levels of tin measured in surficial sediments and biofilms. Detectable increases in tin in sediments and biofilms extended approximately 3km from the discharge location. Tin oxides are recalcitrant solids that are relatively non-toxic and resistant to dissolution. Work continues to develop and validate methods to analyze total tin in the collected biota samples. In general, the interim results of this screening study suggest that the treatment process has performed as predicted and that the concentration of mercury in upper trophic level fish, as a surrogate for all of the underlying transport and transformation processes in a complex ecosystem, has declined as a direct result of the elimination of inorganic mercury inputs. Inorganic tin released to the ecosystem has been found in compartments where particles accumulate with notable levels measured in biofilms.

  9. Modification of single-walled carbon nanotube electrodes by layer-by-layer assembly for electrochromic devices

    E-Print Network [OSTI]

    Gruner, George

    degradation for more than 20 000 cycles, which is not possible in the case of indium tin oxide electrodes.1­3 These transparent electrodes have been used in organic solar cells, photovoltaic devices

  10. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

    E-Print Network [OSTI]

    Mariani, Giacomo

    2013-01-01T23:59:59.000Z

    coating J SC Short-circuit current density VLS Vapor-liquid-conducting oxide I SC Short-circuit current ITO Indium tinV OC ) of 0.2 V, a short circuit current density (J SC ) of

  11. Modeling stress accelerated grain boundary oxidation (SAGBO) in INCOLOY alloy 908

    E-Print Network [OSTI]

    Soontrapa, Chaiyod

    2005-01-01T23:59:59.000Z

    This study explores the possibility of extending the Ph.D. work of Yan Xu on copper-tin alloys (University of Pennsylvania, 1999) to model stress accelerated grain boundary oxidation (SAGBO) in INCOLOY alloy 908. The steady ...

  12. TiN Coatings on Fuel Cladding Tube 

    E-Print Network [OSTI]

    Yu, Zhichao 1987-

    2012-05-04T23:59:59.000Z

    demonstrate this new design and deposite TiN on the tubes. A systematic physical property study including surface characterization (SEM), mechanical testing (hardness and scratch test), thermal cycle test and thermal conductivity measurements, was conducted...

  13. Tin-silver-bismuth solders for electronics assembly

    DOE Patents [OSTI]

    Vianco, P.T.; Rejent, J.A.

    1995-08-08T23:59:59.000Z

    A lead-free solder alloy is disclosed for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218 C down to about 205 C depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10 C/min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight). 4 figs.

  14. Antimony-Doped Tin(II) Sulfide Thin Films

    E-Print Network [OSTI]

    Chakraborty, Rupak

    Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

  15. Tin-silver-bismuth solders for electronics assembly

    DOE Patents [OSTI]

    Vianco, Paul T. (Albuquerque, NM); Rejent, Jerome A. (Albuquerque, NM)

    1995-01-01T23:59:59.000Z

    A lead-free solder alloy for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218.degree. C. down to about 205.degree. C. depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10.degree. C./min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight).

  16. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    168 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms accounted for about 90% of the primary tin consumed domestically in 2013. The major uses for tin

  17. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOE Patents [OSTI]

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30T23:59:59.000Z

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  18. INDIUM--2001 37.1 By Robert D. Brown, Jr.

    E-Print Network [OSTI]

    smelter (Platts Metals Week, 2001c). The indium is contained in the flue dust that had accumulated for more than 50 years, until the smelter's closure in 1981. Shortly after the closure, the U.S. Environmental Protection Agency (EPA), declared the former smelter a Superfund site, under a regulation

  19. Extreme-ultraviolet spectral purity and magnetic ion debris mitigation by use of low-density tin targets

    E-Print Network [OSTI]

    Harilal, S S; Tillack, Mark S; O'Shay, Beau; Tao, Y; Paguio, R; Nikroo, A

    2006-01-01T23:59:59.000Z

    The UTA obtained from full density tin and 0.5% Sn density.The UTA spectrum from tin doped foam targets showed distincta) and 0.5 % density (b) tin in the presence and absence of

  20. Analysis of Bulk and Thin Film Model Samples Intended for Investigating the Strain Sensitivity of Niobium-Tin

    E-Print Network [OSTI]

    Mentink, M. G. T.

    2012-01-01T23:59:59.000Z

    Sensitivity of Niobium-Tin M. G. T. Mentink, A. Anders, D.Sensitivity of Niobium—Tin M. G. T. Mentink, A. Anders, M.of the art powder-in-tube niobium-tin superconductors,"

  1. Electrodeposition of a nickel-indium alloy from an ammonium citrate electrolyte

    SciTech Connect (OSTI)

    Vinogradov, S.N.; Perelygin, Yu.P.

    1988-05-01T23:59:59.000Z

    The possibility of the electrolytic deposition of a nickel-indium alloy from an ammonium citrate electrolyte for purposes of increasing the cathode current output was investigated. The alloy antifriction coating was deposited in a rectangular glass bath of an electrolyte containing indium in the forms of a sulfate and a hydroxocitrate complex and nickel in the forms of mixed ammonium and citrate complexes as well as in sulfate form. The dependence of indium content and current output of the alloy on current density and indium sulfate concentration in the electrolyte was determined. Polarization curves for alloy precipitation established that indium precipitated at more negative potentials than nickel. The effect of indium content on microhardness was also assessed. An optimum electrolyte composition, pH value, and current density were established.

  2. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08T23:59:59.000Z

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  3. Laser wavelength effects on ionic and atomic emission from tin plasmas D. Campos,a

    E-Print Network [OSTI]

    Harilal, S. S.

    Laser wavelength effects on ionic and atomic emission from tin plasmas D. Campos,a S. S. Harilal centered at 13.5 nm. Spitzer et al.1 reported that tin targets irradiated by a neodymium-doped yttrium alu

  4. Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering Marcel A. Wall, David G. Cahill, I. Petrov, D. Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering Marcel to study the nucleation of homoepitaxial TiN layers grown on TiN(001) by ultrahigh vacuum reactive kinet- ics of TiN, a two-component refractory ceramic, on TiN 001 . TiN, typically deposited by reactive

  5. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Nanocrystalline dye-sensitized solar cell/copper indium3, pp. M. Grätzel, “Dye-sensitized solar cells,” Journal ofefficiency solar cell based on dye- sensitized colloidal

  6. Method for enhancing the solubility of boron and indium in silicon

    DOE Patents [OSTI]

    Sadigh, Babak (Oakland, CA); Lenosky, Thomas J. (Pleasanton, CA); Diaz de la Rubia, Tomas (Danville, CA); Giles, Martin (Hillsborough, OR); Caturla, Maria-Jose (Livermore, CA); Ozolins, Vidvuds (Pleasanton, CA); Asta, Mark (Evanston, IL); Theiss, Silva (St. Paul, MN); Foad, Majeed (Santa Clara, CA); Quong, Andrew (Livermore, CA)

    2002-01-01T23:59:59.000Z

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  7. Emission and spectral characteristics of electrodeless indium halide lamp

    SciTech Connect (OSTI)

    Takeda, M.; Hochi, A.; Horii, S.; Matsuoka, T. [Matsushita Electric Industrial Co., Ltd., Kyoto (Japan). Lighting Research Lab.

    1997-12-31T23:59:59.000Z

    The electrodeless HID lamp excited by microwave has been intensively investigated because of its long life, high efficacy and environmental aspect. This study reports excellent emission and spectral characteristics of electrodeless HID lamp containing indium halides. The authors investigate InI and InBr as ingredients, and measure the microwave excited spectra and luminous intensities of lamps which are made from spherical silica glass in 10--40 mm outer diameter and with various amounts of halides. It is well known that such indium halides in the usual metal-halide lamps have strong blue line emission at 410 and 451nm. But, in the authors` microwave excited lamps, continuous spectrum can be observed in addition in the visible region. Increasing input of power of microwave makes this continuous spectrum stronger. Below 1kW microwave input power, the spectrum of InBr lamp almost resembled the CIE standard illuminant D65. As a consequence of the spectrum, they found that the color rendering and the duv of InBr lamp were excellent as high as 95 and smaller than 0.002, respectively, in the region of 400--800W input power. The efficacy higher than 100 lm/W was further achieved at 400W. The authors confirm that the microwave excited indium halides lamps can be applicable to many fields of lighting.

  8. Reductive precipitation of metals photosensitized by tin and antimony porphyrins

    DOE Patents [OSTI]

    Shelnutt, John A.; Gong, Weiliang; Abdelouas, Abdesselam; Lutze, Werner

    2003-09-30T23:59:59.000Z

    A method for reducing metals using a tin or antimony porphyrin by forming an aqueous solution of a tin or antimony porphyrin, an electron donor, such as ethylenediaminetetraaceticacid, triethylamine, triethanolamine, and sodium nitrite, and at least one metal compound selected from a uranium-containing compound, a mercury-containing compound, a copper-containing compound, a lead-containing compound, a gold-containing compound, a silver-containing compound, and a platinum-containing compound through irradiating the aqueous solution with light.

  9. Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

    SciTech Connect (OSTI)

    Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Laukkanen, P. [Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland)] [Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Galatage, R. V. [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-05-27T23:59:59.000Z

    A crystalline oxide film on InAs(100) is investigated with in situ monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction before and after in situ deposition of Al{sub 2}O{sub 3} by atomic layer deposition (ALD) as well as upon air exposure. The oxidation process leads to arsenic and indium trivalent oxidation state formation. The grown epitaxial oxide-InAs interface is stable upon ALD reactor exposure; however, trimethyl aluminum decreases oxidation states resulting in an unreconstructed surface. An increase in oxide concentration is also observed upon air exposure suggesting the crystalline oxide surface is unstable.

  10. Determination of Tin in Nickel-based Alloys by Electrothermal Laser-excited

    E-Print Network [OSTI]

    Michel, Robert G.

    Determination of Tin in Nickel-based Alloys by Electrothermal Laser-excited Atomic Fluorescence. The determination of tin in nickel-based alloys by laser-excited sampling, has been the most frequently employed technique for the determination of tin in nickel-based alloys.3­5 The useatomic fluorescence in a graphite

  11. -tin ! Imma ! sh Phase Transitions of Germanium Xiao-Jia Chen,1

    E-Print Network [OSTI]

    #12;-tin ! Imma ! sh Phase Transitions of Germanium Xiao-Jia Chen,1 Chao Zhang,2 Yue Meng,3 Rui March 2011) New paths were designed for the investigations of the #12;-tin ! Imma ! sh phase transitions in nanocrystalline Ge under conditions of hydrostatic stress. A second-order transition between the #12;-tin and Imma

  12. Microstructure, residual stress, and fracture of sputtered TiN films Liqiang Zhang a

    E-Print Network [OSTI]

    Volinsky, Alex A.

    Microstructure, residual stress, and fracture of sputtered TiN films Liqiang Zhang a , Huisheng Keywords: TiN films Residual stress Hardness Fracture toughness Morphology, structure, residual stress, hardness, and fracture toughness of magnetron sputtered titanium nitride (TiN) thin films, deposited at 300

  13. Sputtered TiN films for superconducting coplanar waveguide resonators S. Ohya,1, a)

    E-Print Network [OSTI]

    Martinis, John M.

    Sputtered TiN films for superconducting coplanar waveguide resonators S. Ohya,1, a) B. Chiaro,2 A of the properties of TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron changes to weak tensile in-plane strain. The TiN films absorb a high concentration of contaminants

  14. First-principles calculations of step formation energies and step interactions on TiN(001)

    E-Print Network [OSTI]

    Ciobanu, Cristian

    First-principles calculations of step formation energies and step interactions on TiN(001) Cristian the formation energies and repulsive interactions of monatomic steps on the TiN(001) surface, using den- sity studies on different aspects related to thin film growth on TiN surfaces, few atomistic studies have been

  15. TiN surface dynamics: role of surface and bulk mass transport processes

    E-Print Network [OSTI]

    Khare, Sanjay V.

    TiN surface dynamics: role of surface and bulk mass transport processes J. Bareñoa , S. Kodambakab, USA Abstract. Transition-metal nitrides, such as TiN, have a wide variety of applications as hard/decay kinetics of two- and three-dimensional TiN(111) islands and the effect of surface-terminated dislocations

  16. . The tin centre is responsible for the activation of the ketone substrate and

    E-Print Network [OSTI]

    Flanagan, Randy

    procedure3 . The tin centre is responsible for the activation of the ketone substrate and increases catalysts, tin is substituted for some of the silicon or aluminium atoms facing the channel, and so is incorporated into the framework. Tin centres are responsible for the catalytic activity of these materials

  17. Atomic layer deposition of TiN films Growth and electrical behavior down to

    E-Print Network [OSTI]

    Atomic layer deposition of TiN films Growth and electrical behavior down to sub-nanometer scale Hao Van Bui #12;ATOMIC LAYER DEPOSITION OF TiN FILMS GROWTH AND ELECTRICAL BEHAVIOR DOWN TO SUBD. Thesis - University of Twente, Enschede, the Netherlands Title: Atomic layer deposition of TiN films

  18. Liquid-tin-jet laser-plasma extreme ultraviolet generation P. A. C. Jansson,a)

    E-Print Network [OSTI]

    Liquid-tin-jet laser-plasma extreme ultraviolet generation P. A. C. Jansson,a) B. A. M. Hansson, O spectral signatures. The system is demonstrated using tin Sn as the target due to its strong emission materials with new spectral signatures. As an example we use tin, motivated by its current interest for EUV

  19. Effect of Plating Variables on Whisker Formation in Pure Tin Films

    E-Print Network [OSTI]

    Collins, Gary S.

    Effect of Plating Variables on Whisker Formation in Pure Tin Films Stephanie Miller Advisors & Materials Engineering, Washington State University Introduction Tin whiskers are single-crystal filaments the effect of plating variables on whisker growth in tin-plated copper samples, with the goal of finding

  20. Diffusion-driven extreme lithium isotopic fractionation in country rocks of the Tin Mountain pegmatite

    E-Print Network [OSTI]

    Mcdonough, William F.

    Diffusion-driven extreme lithium isotopic fractionation in country rocks of the Tin Mountain rocks (amphibolites and schists) of the Tin Mountain pegmatite show systematic changes with distance; fluid infiltration; Tin Mountain pegmatite 1. Introduction Lithium is a fluid-mobile, moderately

  1. Angular distribution of debris from CO2 and YAG laser-produced tin plasmas

    E-Print Network [OSTI]

    Harilal, S. S.

    Angular distribution of debris from CO2 and YAG laser- produced tin plasmas D. Campos, R. W. Coons investigated the angular dependence of atomic and ionic debris from CO2 and YAG laser-produced tin plasmas centered at 13.5 nm (commonly called in-band radiation). Spitzer et al [1] found that tin targets

  2. Microstructure development in Nb3Sn(Ti) internal tin superconducting wire

    E-Print Network [OSTI]

    Elliott, James

    Microstructure development in Nb3Sn(Ti) internal tin superconducting wire I. Pong Æ S. C. Hopkins Æ have studied the phase formation sequences in a Nb3Sn `internal tin' process superconductor. Heat treatments were performed to convert the starting materials of tin, Ti­Sn, copper and niobium, to bronze

  3. Ordering points for incremental TIN construction from James J. Little and Ping Shi

    E-Print Network [OSTI]

    Little, Jim

    Ordering points for incremental TIN construction from DEMs James J. Little and Ping Shi Department approximations to terrain surfaces (TINs) from dense digital elevation models(DEMs) adds points to an initial in the current TIN, the worst fitting point, in terms of vertical distance, is selected. The order of insertion

  4. Computers & Geosciences 32 (2006) 749766 A simple algorithm for the mapping of TIN data onto a

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    Computers & Geosciences 32 (2006) 749­766 A simple algorithm for the mapping of TIN data onto 2005 Abstract Triangulated irregular networks (TIN) in landscape evolution models have the advantage of TIN landscape nodes onto a static grid, facilitating the creation of a fixed stratigraphic record

  5. Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon

    E-Print Network [OSTI]

    Wei, Qiuming

    Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon H. Wang, A 2001) We investigated mechanical properties of TiN as a function of microstructure varying from nanocrystalline to single crystal TiN films deposited on (100) silicon substrates. By varying the substrate

  6. Ambient gas effects on the dynamics of laser-produced tin plume expansion

    E-Print Network [OSTI]

    Tillack, Mark

    Ambient gas effects on the dynamics of laser-produced tin plume expansion S. S. Harilal,a Beau O online 28 April 2006 Controlling the debris from a laser-generated tin plume is one of the prime issues radiation can be used for controlling highly energetic particles from the tin plume. We employed a partial

  7. Interface Stability During Rapid Solidification of Silicon-Tin A thesis presented

    E-Print Network [OSTI]

    Interface Stability During Rapid Solidification of Silicon-Tin A thesis presented by David Eric for the experiment were silicon and silicon-on-sapphire (SOS) wafers implanted with tin. The SOS samples were also/s, the interface might undergo breakdown at 0.3 atomic percent tin, resulting in a cellular structure with a cell

  8. The Effects of pH Variation on Whisker Growth on Tin Plated Copper

    E-Print Network [OSTI]

    Collins, Gary S.

    The Effects of pH Variation on Whisker Growth on Tin Plated Copper Jeffrey Wu Advisors: Uttara Engineering Introduction: Field Failure Caused by Tin Whisker Short 20 YEARS Whiskers Growing Inside://nepp.nasa.gov/whisker/photos/pom/index.htm) Tin is an element commonly desired to plate on electrical components because of it's corrosion

  9. (Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: In 2001, no tin was mined domestically. Production of tin at the only U.S. tin smelter,

    E-Print Network [OSTI]

    ,770 6,640 6,800 Shipments from Government stockpile excesses 11,700 12,200 765 12,000 12,000 Consumption: cans and containers, 30%; electrical, 20%; construction, 10%; transportation, 10%; and other, 30: primary metal consumed, $278 million; imports for consumption, refined tin, $326 million; and secondary

  10. (Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: In 2000, no tin was mined domestically. Production of tin at the only U.S. tin

    E-Print Network [OSTI]

    ,020 6,770 7,000 Shipments from Government stockpile excesses 11,800 11,700 12,200 765 12,000 Consumption: cans and containers, 30%; electrical, 20%; construction, 10%; transportation, 10%; and other, 30: primary metal consumed, $318 million; imports for consumption, refined tin, $391 million; and secondary

  11. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    170 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 90% of the primary tin consumed domestically in 2012. The major uses were as follows

  12. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    172 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 81% of the primary tin consumed domestically in 2006. The major uses were as follows

  13. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    172 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 86% of the primary tin consumed domestically in 2008. The major uses were as follows

  14. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    176 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 81% of the primary tin consumed domestically in 2005. The major uses were as follows

  15. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    170 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 84% of the primary tin consumed domestically in 2009. The major uses were as follows

  16. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    170 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 91% of the primary tin consumed domestically in 2010. The major uses were as follows

  17. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    176 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 84% of the primary tin consumed domestically in 2007. The major uses were as follows

  18. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2000-01-01T23:59:59.000Z

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  19. Abstract--Titanium nitride (TiN) has been investigated as a material for MEMS hotplate heaters operating at high

    E-Print Network [OSTI]

    Technische Universiteit Delft

    Abstract--Titanium nitride (TiN) has been investigated as a material for MEMS hotplate heaters widely available. A material similar to Ta5Si3 is titanium nitride (TiN). It combines a very high melting TiN Bond pad TiN Figure 1. Schematic cross section of the hotplate. Titanium Nitride for MEMS

  20. Thermal neutron flux perturbation due to indium foils in water

    E-Print Network [OSTI]

    Stinson, Ronald Calvin

    1961-01-01T23:59:59.000Z

    of MASTER OF SCIENCE August, i 96I Major Subject: Nuclear Engineering THERMAL NEUTRON FLUX PERTURBATION DUE TO INDIUM FOILS IN WATER A Thesis by Ronald C. Stinson, Jr. Approved as to style and content by: Chai man of Committee Head of Department.... 2. Tittle, C. N. , Nucleonics 8, (6), 5 (1951); Ibid 9 (1), 60 (1951). 3. Skyrme, T, H. R. , "Reduction in Neutron Density Caused by an Absorbing Disc. " MS-91 (N. D. ) 4. Dalton, G. R. and Osborn, R. K. , Nuclear Science and En ineerin 9, 19...

  1. MEMS Hotplates with TiN as a Heater Material J.F. Creemer1

    E-Print Network [OSTI]

    Technische Universiteit Delft

    MEMS Hotplates with TiN as a Heater Material J.F. Creemer1 , W. van der Vlist2 , C.R. de Boer2 , H investigated as a heater material for hotplates and microreactors. TiN is CMOS compatible, and has a higher melting point (2950 ºC) than conventional heaters of Pt and poly-Si. For the first time, TiN is tested

  2. Leaching studies for tin recovery from waste e-scrap

    SciTech Connect (OSTI)

    Jha, Manis Kumar, E-mail: maniskrjha@gmail.com [Metal Extraction and Forming Division, National Metallurgical Laboratory (NML), Jamshedpur 831 007 (India); Choubey, Pankaj Kumar; Jha, Amrita Kumari; Kumari, Archana [Metal Extraction and Forming Division, National Metallurgical Laboratory (NML), Jamshedpur 831 007 (India); Lee, Jae-chun, E-mail: jclee@kigam.re.kr [Mineral Resources Research Division, Korea Institute of Geosciences and Mineral Resources, Daejeon 305-350 (Korea, Republic of); Kumar, Vinay [Metal Extraction and Forming Division, National Metallurgical Laboratory (NML), Jamshedpur 831 007 (India); Jeong, Jinki [Mineral Resources Research Division, Korea Institute of Geosciences and Mineral Resources, Daejeon 305-350 (Korea, Republic of)

    2012-10-15T23:59:59.000Z

    Printed circuit boards (PCBs) are the most essential components of all electrical and electronic equipments, which contain noteworthy quantity of metals, some of which are toxic to life and all of which are valuable resources. Therefore, recycling of PCBs is necessary for the safe disposal/utilization of these metals. Present paper is a part of developing Indo-Korean recycling technique consists of organic swelling pre-treatment technique for the liberation of thin layer of metallic sheet and the treatment of epoxy resin to remove/recover toxic soldering material. To optimize the parameters required for recovery of tin from waste PCBs, initially the bench scale studies were carried out using fresh solder (containing 52.6% Sn and 47.3% Pb) varying the acid concentration, temperature, mixing time and pulp density. The experimental data indicate that 95.79% of tin was leached out from solder material using 5.5 M HCl at fixed pulp density 50 g/L and temperature 90 Degree-Sign C in mixing time 165 min. Kinetic studies followed the chemical reaction controlled dense constant size cylindrical particles with activation energy of 117.68 kJ/mol. However, 97.79% of tin was found to be leached out from solder materials of liberated swelled epoxy resin using 4.5 M HCl at 90 Degree-Sign C, mixing time 60 min and pulp density 50 g/L. From the leach liquor of solder materials of epoxy resin, the precipitate of sodium stannate as value added product was obtained at pH 1.9. The Pb from the leach residue was removed by using 0.1 M nitric acid at 90 Degree-Sign C in mixing time 45 min and pulp density 10 g/L. The metal free epoxy resin could be disposed-of safely/used as filling material without affecting the environment.

  3. VISUAL WORDS, TEXT ANALYSIS CONCEPTS FOR COMPUTER VISION Wang-Juh Chen, Hoi Tin Kong, Minah Oh,

    E-Print Network [OSTI]

    VISUAL WORDS, TEXT ANALYSIS CONCEPTS FOR COMPUTER VISION By Wang-Juh Chen, Hoi Tin Kong, Minah Oh Report: Visual Words, Text Analysis Concepts for Computer Vision Wang-Juh Chen Hoi Tin Kong Minah Oh

  4. Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery

    DOE Patents [OSTI]

    Neudecker, Bernd J. (Knoxville, TN); Bates, John B. (Oak Ridge, TN)

    2001-01-01T23:59:59.000Z

    Disclosed are silicon-tin oxynitride glassy compositions which are especially useful in the construction of anode material for thin-film electrochemical devices including rechargeable lithium-ion batteries, electrochromic mirrors, electrochromic windows, and actuators. Additional applications of silicon-tin oxynitride glassy compositions include optical fibers and optical waveguides.

  5. Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

    E-Print Network [OSTI]

    of titanium in a nitrogen atmosphere forms TiN with only a slight dependence on substrate temperatureAtmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium, Massachusetts 02138 (Received 15 December 1994; accepted 28 October 1995) Near stoichiometric titanium nitride

  6. Friday, April 13, 2005 Morning Session Chaired by Tin-Yau Tam

    E-Print Network [OSTI]

    Li, Chi-Kwong

    Friday, April 13, 2005 Morning Session Chaired by Tin-Yau Tam 09:30 ­ 10:15 Raymond H. Chan Results on the Drazin Inverse 10:45 ­ 11:15 Tin-Yau Tam, Auburn University On Four Sets of Scalars

  7. Monomer-Capped Tin Metal Nanoparticles for Anode Materials in Lithium Secondary Batteries

    E-Print Network [OSTI]

    Cho, Jaephil

    Monomer-Capped Tin Metal Nanoparticles for Anode Materials in Lithium Secondary Batteries Mijung Graphite can store 372 mAh/g corresponding to LiC6, and tin can store 970 mAh/g corresponding to Li4.4Sn close to graphite. The reason for failure is believed to be the inhomogeneous volume expansion

  8. TESLA Report 2004-02 Anti-multipactor TiN coating of RF power

    E-Print Network [OSTI]

    N layers generation on surfaces which were not protected in this way previously. Thin TiN films on ceramicTESLA Report 2004-02 1 Anti-multipactor TiN coating of RF power coupler components for TESLA performance of couplers) J. Lorkiewicz1 , The Andrzej Soltan Institute for Nuclear Studies, Pl 05-400 Otwock

  9. Mitigation of Sulfur Poisoning of Ni/Zirconia SOFC Anodes by Antimony and Tin

    SciTech Connect (OSTI)

    Marina, Olga A.; Coyle, Christopher A.; Engelhard, Mark H.; Pederson, Larry R.

    2011-02-28T23:59:59.000Z

    Surface Ni/Sb and Ni/Sb alloys were found to efficiently minimize the negative effects of sulfur on the performance of Ni/zirconia anode-supported solid oxide fuel cells (SOFC). Prior to operating on fuel gas containing low concentrations of H2S, the nickel/zirconia anodes were briefly exposed to antimony or tin vapor, which only slightly affected the SOFC performance. During the subsequent exposures to 1 and 5 ppm H2S, increases in anodic polarization losses were minimal compared to those observed for the standard nickel/zirconia anodes. Post-test XPS analyses showed that Sb and Sn tended to segregate to the surface of Ni particles, and further confirmed a significant reduction of adsorbed sulfur on the Ni surface in Ni/Sn and Ni/Sb samples compared to the Ni. The effect may be the result of weaker sulfur adsorption on bimetallic surfaces, adsorption site competition between sulfur and Sb or Sn on Ni, or other factors. The use of dilute binary alloys of Ni-Sb or Ni-Sn in the place of Ni, or brief exposure to Sb or Sn vapor, may be effective means to counteract the effects of sulfur poisoning in SOFC anodes and Ni catalysts. Other advantages, including suppression of coking or tailoring the anode composition for the internal reforming, are also expected.

  10. Molten tin reprocessing of spent nuclear fuel elements. [Patent application; continuous process

    DOE Patents [OSTI]

    Heckman, R.A.

    1980-12-19T23:59:59.000Z

    A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support te liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

  11. Couplings between dipole and quadrupole vibrations in tin isotopes

    E-Print Network [OSTI]

    Cédric Simenel; Philippe Chomaz

    2009-12-11T23:59:59.000Z

    We study the couplings between collective vibrations such as the isovector giant dipole and isoscalar giant quadrupole resonances in tin isotopes in the framework of the time-dependent Hartree-Fock theory with a Skyrme energy density functional. These couplings are a source of anharmonicity in the multiphonon spectrum. In particular, the residual interaction is known to couple the isovector giant dipole resonance with the isoscalar giant quadrupole resonance built on top of it, inducing a nonlinear evolution of the quadrupole moment after a dipole boost. This coupling also affects the dipole motion in a nucleus with a static or dynamical deformation induced by a quadrupole constraint or boost respectively. Three methods associated with these different manifestations of the coupling are proposed to extract the corresponding matrix elements of the residual interaction. Numerical applications of the different methods to 132Sn are in good agreement with each other. Finally, several tin isotopes are considered to investigate the role of isospin and mass number on this coupling. A simple 1/A dependence of the residual matrix elements is found with no noticeable contribution from the isospin. This result is interpreted within the Goldhaber-Teller model.

  12. Orientation-dependent mobilities from analyses of two-dimensional TiN(111) island decay J. Bareo,1*

    E-Print Network [OSTI]

    Khare, Sanjay V.

    Orientation-dependent mobilities from analyses of two-dimensional TiN(111) island decay kinetics J (T = 1550-1700 K) low-energy electron microscopy measurements of two-dimensional TiN island coarsening/decay kinetics on TiN(111) terraces for which ( ) values are known [Phys. Rev. B 67 (2003) 35409

  13. Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar

    E-Print Network [OSTI]

    Gall, Daniel

    Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar¿ Sputter Etched and UPS were used to study epitaxial TiN 001 layers grown in situ which were Ar sputter etched. The films Host Material: epitaxial TiN(001) thin film sputter etched Instrument: Physical Electronics, Inc. 5400

  14. arXiv:condmat/0607335 Molecular dynamics of shock fronts and their transitions in Lennard-Jonesium and Tin

    E-Print Network [OSTI]

    Texas at Austin. University of

    in Lennard-Jonesium and Tin J. M. D. Lane #3; and M. P. Marder y Center for Nonlinear Dynamics, University for shocks in tin which agrees to within 6% with experimental data. We study the strong shock to elastic-plastic shock transition in tin and #12;nd that it is a continuous transition consistent with a transcritical

  15. Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. I. Analysis of

    E-Print Network [OSTI]

    Gall, Daniel

    Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. I. Analysis of As-deposited Layers used to characterize as- deposited epitaxial TiN 001 layers grown in situ. The films were deposited, while the UPS data was generated by He I and He II UV radiation. The spectra show that the TiN 001

  16. Pathways of atomistic processes on TiN,,001... and ,,111... surfaces during film growth: an ab initio study

    E-Print Network [OSTI]

    Gall, Daniel

    Pathways of atomistic processes on TiN,,001... and ,,111... surfaces during film growth: an ab used to calculate binding and diffusion energies of adatoms, molecules, and small clusters on TiN 001 and TiN 111 surfaces in order to isolate the key atomistic processes which determine texture evolution

  17. Fabrication of TiN nanorods by electrospinning and their electrochemical properties

    SciTech Connect (OSTI)

    Sun, Dongfei; Lang, Junwei [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Yan, Xingbin, E-mail: xbyan@licp.cas.c [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Hu, Litian; Xue, Qunji [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2011-05-15T23:59:59.000Z

    TiN nanorods were synthesized using electrospinning technique followed by thermolysis in different atmospheres. A dimethyl formamide-ethanol solution of poly-(vinyl pyrrolidone) and Ti (IV)-isopropoxide was used as the electrospinning precursor solution and as-spun nanofibers were calcined at 500 {sup o}C in air to generate TiO{sub 2} nanofibers. Subsequently, a conversion from TiO{sub 2} nanofibers to TiN nanorods was employed by the nitridation treatment at 600{approx}1400 {sup o}C in ammonia atmosphere. A typical characteristic of the final products was that the pristine nanofibers were cut into nanorods. The conversion from TiO{sub 2} to TiN was realized when the nitridation temperature was above 800 {sup o}C. As-prepared nanorods were composed of TiN nano-crystallites and the average crystallite size gradually increased with the increase of the nitridation temperature. Electrochemical properties of TiN nanorods showed strong dependence on the nitridation temperature. The maximum value of the specific capacitance was obtained from the TiN nanorods prepared at 800 {sup o}C. -- Graphical Abstract: TiN nanorods were prepared using electrospinning followed by thermolysis under different atmospheres. Electrochemical properties of the TiN nanorods showed strong dependence on the nitridation temperature. Display Omitted Highlights: {yields} TiN nanorods were synthesized by a combination of electrospinning and thermolysis. {yields} Electrochemical properties showed strong dependence on the nitridation temperature. {yields} The TiN nanorods prepared at 800 {sup o}C possessed the highest specific capacitance.

  18. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing

    E-Print Network [OSTI]

    were exported to Canada for processing. Two companies, one in New York and the other in Rhode Island gallium diselenide (CIGS) solar cells require approximately 50 metric tons of indium to produce 1 gigawatt of solar power. Research was underway to develop a low-cost manufacturing process for flexible CIGS solar

  19. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2002-01-01T23:59:59.000Z

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  20. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01T23:59:59.000Z

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  1. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2004. Two companies,

    E-Print Network [OSTI]

    80 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium-efficiency photovoltaic devices. A major manufacturer is testing indium for a new application as a heat-management material in computers, which could increase consumption by 40 metric tons per year. The estimated

  2. A monopole-optimized effective interaction for tin isotopes

    E-Print Network [OSTI]

    Chong Qi; Z. X. Xu

    2012-10-09T23:59:59.000Z

    We present a systematic configuration-interaction shell model calculation on the structure of light tin isotopes with a new global optimized effective interaction. The starting point of the calculation is the realistic CD-Bonn nucleon-nucleon potential. The unknown single-particle energies of the $1d_{3/2}$, $2s_{1/2}$ and $0h_{11/2}$ orbitals and the T=1 monopole interactions are determined by fitting to the binding energies of 157 low-lying yrast states in $^{102-132}$Sn. We apply the Hamiltonian to analyze the origin of the spin inversion between $^{101}$Sn and $^{103}$Sn that was observed recently and to explore the possible contribution from interaction terms beyond the normal pairing.

  3. Effective interactions and shell model studies of heavy tin isotopes

    E-Print Network [OSTI]

    M. P. Kartamyshev; T. Engeland; M. Hjorth-Jensen; E. Osnes

    2006-10-05T23:59:59.000Z

    We present results from large-scale shell-model calculations of even and odd tin isotopes from 134Sn to 142}Sn with a shell-model space defined by the 1f7/2,2p3/2,0h9/2,2p1/2,1f5/2,0i13/2 single-particle orbits. An effective two-body interaction based on modern nucleon-nucleon interactions is employed. The shell-model results are in turn analyzed for their pairing content using a generalized seniority approach. Our results indicate that a pairing-model picture captures a great deal of the structure and the correlations of the lowest lying states for even and odd isotopes.

  4. The Structure and Properties of Amorphous Indium Oxide D. Bruce Buchholz,

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature structure for TCOs and TOSs is a network of MOx polyhedra. Each metal ion

  5. Indium-Vanadium Oxides Deposited by Radio Frequency Sputtering: New Thin Film Transparent

    E-Print Network [OSTI]

    Artuso, Florinda

    in order to determine their possible applications in electrochromic devices as optically passive ion-vis-NIR transmittance and reflectance modes, have demonstrated that films are electrochromic, but the presence in electrochromic devices (ECD) with variable light transmission ("smart windows").2,3 As has been demonstrated

  6. Highly transparent Nb-doped indium oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Jun Ho; Seong, Tae-Yeon [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Na, Seok-In [Professional Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeongju-si, Jellabuk-do 561-756 (Korea, Republic of); Chung, Kwun-Bum [Department of Physics, Dankook University, Mt. 29, Anseo-Dong, Chenan 330-714 (Korea, Republic of); Lee, Hye-Min; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong, Yongin, Gyeonggi-do 446-701 (Korea, Republic of)

    2014-03-15T23:59:59.000Z

    The authors investigated the characteristics of Nb-doped In{sub 2}O{sub 3} (INbO) films prepared by co-sputtering of Nb{sub 2}O{sub 5} and In{sub 2}O{sub 3} for use in transparent anodes for organic solar cells (OSCs). To optimize the Nb dopant composition in the In{sub 2}O{sub 3} matrix, the effect of the Nb doping power on the resistivity and transparency of the INbO films were examined. The electronic structure and microstructure of the INbO films were also investigated using synchrotron x-ray absorption spectroscopy and x-ray diffraction examinations in detail. At the optimized Nb co-sputtering power of 30?W, the INbO film exhibited a sheet resistance of 15??/sq, and an optical transmittance of 86.04% at 550?nm, which are highly acceptable for the use as transparent electrodes in the fabrication of OSCs. More importantly, the comparable power conversion efficiency (3.34%) of the OSC with an INbO anode with that (3.31%) of an OSC with a commercial ITO anode indicates that INbO films are promising as a transparent electrode for high performance OSCs.

  7. Simulation studies for Tin Bolometer Array for Neutrinoless Double Beta Decay

    E-Print Network [OSTI]

    Singh, V; Mathimalar, S; Nanal, V; Pillay, R G

    2014-01-01T23:59:59.000Z

    It is important to identify and reduce the gamma radiation which can be a significant source of background for any double beta decay experiment. The TIN.TIN detector array, which is under development for the search of Neutrinoless Double Beta Decay in $^{124}$Sn, has the potential to utilize the hit multiplicity information to discriminate the gamma background from the events of interest. Monte Carlo simulations for optimizing the design of a Tin detector module has been performed by varying element sizes with an emphasis on the gamma background reduction capabilities of the detector array.

  8. Film Coating Process Research and Characterization of TiN Coated Racetrack-type Ceramic Pipe

    E-Print Network [OSTI]

    Wang, Jie; Zhang, Bo; Wei, Wei; Fan, Le; Pei, Xiangtao; Hong, Yuanzhi; Wang, Yong

    2015-01-01T23:59:59.000Z

    TiN film was coated on the internal face of racetrack-type ceramic pipe by three different methods: radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of TiN film under different coating methods were compared. According to the AFM, SEM, XPS test results,these properties were analyzed, such as TiN film roughness and surface morphology. At the same time, the deposition rates were studied under two types' cathode, Ti wires and Ti plate. According to the SEM test results, Ti plate cathode can improve the TiN/Ti film deposition rate obviously.

  9. Simulation studies for Tin Bolometer Array for Neutrinoless Double Beta Decay

    E-Print Network [OSTI]

    V. Singh; N. Dokania; S. Mathimalar; V. Nanal; R. G. Pillay

    2014-08-20T23:59:59.000Z

    It is important to identify and reduce the gamma radiation which can be a significant source of background for any double beta decay experiment. The TIN.TIN detector array, which is under development for the search of Neutrinoless Double Beta Decay in $^{124}$Sn, has the potential to utilize the hit multiplicity information to discriminate the gamma background from the events of interest. Monte Carlo simulations for optimizing the design of a Tin detector module has been performed by varying element sizes with an emphasis on the gamma background reduction capabilities of the detector array.

  10. Basic properties of a liquidt in anode solid oxide fuel cell

    SciTech Connect (OSTI)

    Harry Abernathy; RandallGemmen; KirkGerdes; Mark Koslowske; ThomasTao

    2010-12-17T23:59:59.000Z

    An unconventional high temperature fuel cell system, the liquidt in anode solid oxide fuel cell(LTA-SOFC), is discussed. A thermodynamic analysis of a solid oxide fuel cell with a liquid metal anode is developed. Pertinent thermo chemical and thermo physical properties of liquid tin in particular are detailed. An experimental setup for analysis of LTA-SOFC anode kinetics is described, and data for a planar cell under hydrogen indicated an effective oxygen diffusion coefficient of 5.3×10?5 cm2 s?1 at 800 ?C and 8.9×10?5 cm2 s?1 at 900 ?C. This value is similar to previously reported literature values for liquid tin. The oxygen conductivity through the tin, calculated from measured diffusion coefficients and theoretical oxygen solubility limits, is found to be on the same order of thatofyttria-stabilizedzirconia(YSZ), a traditional SOFC electrolyte material. As such,the ohmicloss due to oxygen transport through the tin layer must be considered in practical system cell design since the tin layer will usually be at least as thick as the electrolyte.

  11. An experimental investigation of acoustic cavitation as a fragmentation mechanism of molten tin droplets in water

    E-Print Network [OSTI]

    Bjørnard, Trond Arnold

    1974-01-01T23:59:59.000Z

    A series of experiments were performed where single molten tin droplets of known size, shape and temperature were dropped from a low height into a pool of distilled water. The pressure waves emanating from the hot droplets ...

  12. Three-dimensional defect characterization : focused ion beam tomography applied to tin sulfide thin films

    E-Print Network [OSTI]

    Youssef, Amanda

    2014-01-01T23:59:59.000Z

    Porosity is postulated to be one of the reasons for the low efficiency of tin sulfide-based devices. This work is a preliminary investigation of the effects of two film growth parameters deposition rate and substrate ...

  13. Measurement of light capture in solar cells from silver- and tin-plated patterned bus bars

    E-Print Network [OSTI]

    Winiarz, Christine Eve

    2007-01-01T23:59:59.000Z

    Bus bars on solar cells shade silicon from light. When the bus bars are patterned, they can reflect light back onto the silicon using total internal reflection. These patterned bus bars are tin plated and produce 1-2.5% ...

  14. Nonadiabatic electron transfer at the nanoscale tin-oxide semiconductor/aqueous solution interface

    E-Print Network [OSTI]

    published as an Advance Article on the web 28th January 2004 Photo-excitation of chromophoric metal forward and back electron transfer reactions involving molecular dyes and wide bandgap semiconductors words, electro- nic coupling rather than nuclear motion appears to govern the reaction dynamics

  15. Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles

    E-Print Network [OSTI]

    Thibado, Paul M.

    to pristine freestanding graphene and propose a nanoparticle encapsulation model. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745780] Solar cells utilizing solid-state semiconductor materials. In the past ten years polymer heterojunction solar cells, which use cheaply manufactured organic polymers

  16. One-pot synthesis of highly mesoporous antimony-doped tin oxide from

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeeding access toTest and Evaluation |quasicrystals |interpenetrating

  17. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS Cantilever Resonator

    E-Print Network [OSTI]

    Rubloff, Gary W.

    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS, Subramaniam Kanakaraju, Neil Goldsman, and Reza Ghodssi Abstract--We report a microelectromechanical system, microelectromechanical system (MEMS) cantilevers, pentacene, III­V MEMS. I. INTRODUCTION THE NEED to monitor

  18. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    conversion efficiency of solar cells made from this material [1]. One of the special qualities of the CIGS improve the solar cell performance. In many of the different CIGS fabrication techniques, an in depthDiffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A

  19. Electrochemical study of the properties of indium in room temperature chloroaluminate molten salts

    SciTech Connect (OSTI)

    Liu, J.S.Y.; Sun, I.W. [National Cheng-Kung Univ., Tainan (Taiwan, Province of China). Dept. of Chemistry

    1997-01-01T23:59:59.000Z

    The electrochemistry of indium was studied with voltammetry and chronoamperometry at glassy carbon, tungsten, and nickel electrodes in the basic and acidic aluminum chloride-1,2-dimethyl-3-propylimidazolium chloride molten salt at 27 C. In the basic melt, In(III) is complexed as [InCl{sub 5}]{sup 2{minus}}, which could be reduced to indium metal through a three-electron reduction process. The electrodeposition of indium on glassy carbon and tungsten electrodes involves progressive three-dimensional nucleation on a finite number of active sites with diffusion-controlled growth of the nuclei. The electrodeposition of indium metal on a nickel electrode entails progressive three-dimensional nucleation on a large number of active sites. The formal potentials of the In(III)/In couple in the 44.4 to 55.6 and 49.0 to 51.0 mole percent (m/o) melts are {minus}1.096 and {minus}1.009 V, respectively, vs. Al(III)Al in the 66.7 to 33.3 m/o.

  20. Indium-induced changes in GaN,,0001... surface morphology John E. Northrup

    E-Print Network [OSTI]

    Indium-induced changes in GaN,,0001... surface morphology John E. Northrup Xerox Palo Alto Research-principles calculations of the energetics of the In-terminated GaN 0001 , (0001), (1011), and (1011) surfaces indicate- retical studies to determine the behavior of In on GaN sur- faces. The term surfactant is used often

  1. Extended and Revised Analysis of Singly Ionized Tin: Sn II

    E-Print Network [OSTI]

    Haris, K; Tauheed, A

    2013-01-01T23:59:59.000Z

    The electronic structure of singly ionized tin (SnII) is partly a one-electron and partly a three-electron system with ground configuration 5s25p. The excited configurations are of the type 5s2nl in the one-electron part, and 5s5p2, 5p3 and 5s5pnl (nl = 6s, 5d) in the three-electron system with quartet and doublet levels. The spectrum analyzed in this work was recorded on a 3 m normal incidence vacuum spectrograph of the Antigonish laboratory (Canada) in the wavelength region 300 - 2080 {\\AA} using a triggered spark source. The existing interpretation of the one-electron level system was confirmed in this paper, while the 2S1/2 level of the 5s5p2 configuration has been revised. The analysis has been extended to include new configurations 5p3, 5s5p5d and 5s5p6s with the aid of superposition-of-configurations Hartree-Fock calculations with relativistic corrections. The ionization potential obtained from the ng series was found to be 118023.7(5) 1/cm (14.63307(6) eV). We give a complete set of critically evaluat...

  2. Short-range order, atomic displacements and effective interatomic ordering energies in TiN0.82 (*)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    2217 Short-range order, atomic displacements and effective interatomic ordering energies in TiN0 monocristal TiN0,82 a été mesurée à l'équilibre thermodynamique à 700, 800 et 900 °C. L'intensité diffuse est, de 0,042 et 0,024 Å respectivement. Abstract. - The elastic diffuse neutron scattering of a TiN0

  3. TIN2 Binds TRF1 and TRF2 Simultaneously and Stabilizes the TRF2 Complex on Telomeres*

    E-Print Network [OSTI]

    de Lange, Titia

    TIN2 Binds TRF1 and TRF2 Simultaneously and Stabilizes the TRF2 Complex on Telomeres* Received interacting partner, TIN2, as well as PIP1 and POT1 and regulates telomere-length homeo- stasis. The TRF2 that TRF1, TIN2, PIP1, and POT1 are associated with the TRF2-hRap1 complex. Gel filtration identified a TRF

  4. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1992-01-01T23:59:59.000Z

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  5. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, J.W.

    1992-09-15T23:59:59.000Z

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  6. Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy

    SciTech Connect (OSTI)

    Krockenberger, Yoshiharu; Karimoto, Shin-ichi; Yamamoto, Hideki; Semba, Kouich [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

    2012-10-15T23:59:59.000Z

    We have investigated the formation of titanium nitride (TiN) thin films on (001) MgO substrates by molecular beam epitaxy and radio frequency acitvated nitrogen plasma. Although cubic TiN is stabile over a wide temperature range, superconducting TiN films are exclusively obtained when the substrate temperature exceeds 710 Degree-Sign C. TiN films grown at 720 Degree-Sign C show a high residual resistivity ratio of approximately 11 and the superconducting transition temperature (T{sub c}) is well above 5 K. Superconductivity has been confirmed also by magnetiztion measurements. In addition, we determined the upper critical magnetic field ({mu}{sub 0}H{sub c2}) as well as the corresponding coherence length ({xi}{sub GL}) by transport measurements under high magnetic fields. High-resolution transmission electron microscopy data revealed full in plane coherency to the substrate as well as a low defect density in the film, in agreement with a mean-free path length Script-Small-L Almost-Equal-To 106 nm, which is estimated from the residual resistivity value. The observations of reflection high energy electron diffraction intensity oscillations during the growth, distinct Laue fringes around the main Bragg peaks, and higher order diffraction spots in the reciprocal space map suggest the full controlability of the thickness of high quality superconducting TiN thin films.

  7. Broad spectral response photodetector based on individual tin-doped CdS nanowire

    SciTech Connect (OSTI)

    Zhou, Weichang, E-mail: wchangzhou@gmail.com, E-mail: dstang@hunnu.edu.cn; Peng, Yuehua; Yin, Yanling; Zhou, Yong; Zhang, Yong; Tang, Dongsheng, E-mail: wchangzhou@gmail.com, E-mail: dstang@hunnu.edu.cn [Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081 (China)

    2014-12-15T23:59:59.000Z

    High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

  8. The Dhiban Excavation and Development Project's 2005 Season

    E-Print Network [OSTI]

    2010-01-01T23:59:59.000Z

    copper and cobalt. Lead-tin yellow, tin oxide and copper-redoccurrences of lead-tin yel- low, tin oxide and copper-red.

  9. Effect of conductive TiN buffer layer on the growth of stoichiometric VO{sub 2} films and the out-of-plane insulator–metal transition properties

    SciTech Connect (OSTI)

    Mian, Md. Suruz; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan)

    2014-07-15T23:59:59.000Z

    A TiN buffer film is used with a conductive interfacial layer for stoichiometric vanadium dioxide (VO{sub 2}) film growth, creating a layered device with a VO{sub 2} insulator–metal transition. Low-temperature growth (<250?°C) of the VO{sub 2} film on a Ti layer on a Si substrate is achieved using inductively coupled plasma-assisted sputtering. It is found that Ti diffusion and oxidation degrades the VO{sub 2} film quality at higher temperatures, but the introduction of a TiN buffer layer suppresses the degradation and enables growth of a stoichiometric VO{sub 2} film even at 400?°C. The high resistance of the VO{sub 2} film grown on the TiN layer suggests the benefit of using the intrinsic insulator–metal transition of VO{sub 2}. The voltage-triggered switching properties of the layered devices are examined, and the cause of the high out-of-plane resistance in this layered structure is discussed based upon the dependence of the initial resistance as a function the electrode area.

  10. Tin(II) alkoxide hydrolysis products for use as base catalysts

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM)

    2002-01-01T23:59:59.000Z

    Tin alkoxide compounds are provided with accessible electrons. The compounds are a polymeric tin alkoxide, [Sn(OCH.sub.2 C(CH.sub.3).sub.3).sub.2 ].sub.n, and the hydrolysis products Sn.sub.6 O.sub.4 (OCH.sub.2 C(CH.sub.3).sub.3).sub.4 and Sn.sub.5 O.sub.2 (OCH.sub.2 C(CH.sub.3).sub.3).sub.6. The hydrolysis products are formed by hydrolyzing the [Sn(OCH.sub.2 C(CH.sub.3).sub.3).sub.2 ].sub.n in a solvent with controlled amounts of water, between 0.1 and 2 moles of water per mole of the polymeric tin alkoxide.

  11. Cluster formation probability in the trans-tin and trans-lead nuclei

    E-Print Network [OSTI]

    K. P. Santhosh; R. K. Biju; Sabina Sahadevan

    2010-05-10T23:59:59.000Z

    Within our fission model, the Coulomb and proximity potential model (CPPM) cluster formation probabilities are calculated for different clusters ranging from carbon to silicon for the parents in the trans-tin and trans- lead regions. It is found that in trans-tin region the 12^C, 16^O, 20^Ne and 24^Mg clusters have maximum cluster formation probability and lowest half lives as compared to other clusters. In trans-lead region the 14^C, 18, 20^O, 23^F, 24,26^Ne, 28,30^Mg and 34^Si clusters have the maximum cluster formation probability and minimum half life, which show that alpha like clusters are most probable for emission from trans-tin region while non-alpha clusters are probable from trans-lead region. These results stress the role of neutron proton symmetry and asymmetry of daughter nuclei in these two cases.

  12. State of the Art Power-in Tube Niobium-Tin Superconductors

    SciTech Connect (OSTI)

    Godeke, A.; Ouden, A. Den; Nijhuis, A.; ten Kate, H.H.J.

    2008-06-01T23:59:59.000Z

    Powder-in-Tube (PIT) processed Niobium-Tin wires are commercially manufactured for nearly three decades and have demonstrated a combination of very high current density (presently up to 2500 A mm{sup -2} non-Cu at 12 T and 4.2 K) with fine (35 {micro}m), well separated filaments. We review the developments that have led to the present state of the art PIT Niobium-Tin wires, discuss the wire manufacturing and A15 formation processes, and describe typical superconducting performance in relation to magnetic field and strain. We further highlight successful applications of PIT wires and conclude with an outlook on possibilities for further improvements in the performance of PIT Niobium-Tin wires.

  13. Tin-117m-labeled stannic (Sn.sup.4+) chelates

    DOE Patents [OSTI]

    Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Richards, Powell (Bayport, NY)

    1985-01-01T23:59:59.000Z

    The radiopharmaceutical reagents of this invention and the class of Tin-117m radiopharmaceuticals are therapeutic and diagnostic agents that incorporate gamma-emitting nuclides that localize in bone after intravenous injection in mammals (mice, rats, dogs, and rabbits). Images reflecting bone structure or function can then be obtained by a scintillation camera that detects the distribution of ionizing radiation emitted by the radioactive agent. Tin-117m-labeled chelates of stannic tin localize almost exclusively in cortical bone. Upon intravenous injection of the reagent, the preferred chelates are phosphonate compounds, preferable, PYP, MDP, EHDP, and DTPA. This class of reagents is therapeutically and diagnostically useful in skeletal scintigraphy and for the radiotherapy of bone tumors and other disorders.

  14. Tin Anode for Sodium-Ion Batteries Using Natural Wood Fiber as a Mechanical Buffer and Electrolyte Reservoir

    E-Print Network [OSTI]

    Li, Teng

    Tin Anode for Sodium-Ion Batteries Using Natural Wood Fiber as a Mechanical Buffer and Electrolyte Information ABSTRACT: Sodium (Na)-ion batteries offer an attractive option for low cost grid scale storage due to the abundance of Na. Tin (Sn) is touted as a high capacity anode for Na-ion batteries with a high theoretical

  15. Absolute orientation-dependent anisotropic TiN,,111... island step energies and stiffnesses from shape fluctuation analyses

    E-Print Network [OSTI]

    Khare, Sanjay V.

    by alternating 110 steps, which form 100 and 110 nanofacets with the terrace. Relative step energiesAbsolute orientation-dependent anisotropic TiN,,111... island step energies and stiffnesses from of the island per unit TiN area. We find that for alternating S1 and S2 110 steps, the ratio 1 / 2 0.72 0

  16. The effect of axial strain cycling on the critical current density and n-value of ITER niobium-tin

    E-Print Network [OSTI]

    Hampshire, Damian

    The effect of axial strain cycling on the critical current density and n-value of ITER niobium niobium-tin VAC and EM-LMI strands and the detailed characterisation of the EM-LMI-TFMC strand at -0 current density and n-value of two ITER candidate niobium-tin strands (EM- LMI and VAC). The strands were

  17. Crystal chemistry and self-lubricating properties of monochalcogenides gallium selenide and tin selenide

    SciTech Connect (OSTI)

    Erdemir, A.

    1993-02-01T23:59:59.000Z

    This paper describes the fundamentals of the crystal chemistry and self-lubricating mechanisms of two monochalcogenides; tin selenide and gallium selenide. Specifically, it enumerates their inter-atomic array and bond structure in crystalline states, and correlates this fundamental knowledge with their self-lubricating capacity. Friction tests assessing the self-lubricating performance of gallium and tin selenides were carried out on a pin-on-disk machine. Specifically, large crystalline pieces of gallium selenide and tin selenide were cut and cleaved into flat squares and subsequently rubbed against the sapphire balls. In another case, the fine powders (particle size {approx} 50--100 {mu}m) of gallium selenide and tin selenide were manually fed into the sliding interfaces of 440C pins and 440C disks. For the specific test conditions explored, it was found that the friction coefficients of the sapphire/gallium selenide and sapphire/tin selenide pairs were {approx} 0.23 and {approx} 0.35, respectively. The friction coefficients of 440C pin/440C disk test pairs with gallium selenide and tin selenide powders were on the orders of {approx} 0.22 and {approx} 0.38, respectively. For comparison, a number of parallel friction tests were performed with MoS{sub 2} powders and compacts and the results of these tests were also reported. The friction data together with the crystal-chemical knowledge and the electron microscopic evidence supported the conclusion that the lubricity and self-lubricating mechanisms of these solids are closely related to their crystal chemistry and the nature of interlayer bonding.

  18. Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys

    SciTech Connect (OSTI)

    Bali, Ashoka; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, Karnataka (India); Wang, Heng; Snyder, G. Jeffrey [Department of Materials Science, California Institute of Technology, Pasadena, California 91125 (United States)

    2014-07-21T23:59:59.000Z

    Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800?K for the sample with 30% Se content.

  19. Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001) J. S. Chawla, X. Y. Zhang, and D. Galla)

    E-Print Network [OSTI]

    Gall, Daniel

    Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001) J. S. Chawla, X. Y.5-nm-thick TiN(001) buffer layer. X-ray diffraction and reflection indicate that the TiN(001) surface continuous Cu layer on MgO. The wet- ting of Cu on TiN is expected to be better, due to the surface energy

  20. 714 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 38, NO. 4, APRIL 2010 Interaction of a CO2 Laser Pulse With Tin-Based

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Pulse With Tin-Based Plasma for an Extreme Ultraviolet Lithography Source Yezheng Tao, Mark S. Tillack

  1. Tridentate ligated heteronuclear tin(II) alkoxides for use as base catalysts

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    Tin alkoxide compounds are provided with accessible electrons. The tin alkoxide compound have the general formula (THME).sub.2 Sn.sub.3 (M(L).sub.x).sub.y, where THME is (O--CH.sub.2).sub.3 C(CH.sub.3), M is a metal atom selected from Sn and Ti, L is an organic/inorganic ligand selected from an alkoxide, a phenoxide or an amide, x is selected from 2 and 4 and y is selected from 0 and 1. These compounds have applicability as base catalysts in reactions and in metal-organic chemical vapor depositions processes.

  2. DETERMINATION OF THE SURFACE COMPOSITION OF BINARY ALLOYS BY AUGER ELECTRON SPECTROSCOPY: THE GOLD-SILVER AND GOLD-TIN SYSTEMS

    E-Print Network [OSTI]

    Overbury, S.H.

    2010-01-01T23:59:59.000Z

    THE GOLD-SILVER AND GOLD-TIN SYSTEMS Steven Henry Overbury (GOLD-SILVER lu"JD GOLD-TIN SYSTEl1S Steven Henry Overburyat % Au,113 WEIGHT PERCENT TIN I I I I 133G. [5~ II I T L I

  3. Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering M. A. Auger,1,5 L. Vzquez,1,

    E-Print Network [OSTI]

    Cuerno, Rodolfo

    Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering M. A. Auger,1 manuscript received 1 December 2005; published 31 January 2006 We study surface kinetic roughening of TiN. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening

  4. arXiv:cond-mat/0607335v113Jul2006 Molecular dynamics of shock fronts and their transitions in Lennard-Jonesium and Tin

    E-Print Network [OSTI]

    Texas at Austin. University of

    in Lennard-Jonesium and Tin J. M. D. Lane and M. P. Marder Center for Nonlinear Dynamics, University of Texas for shocks in tin which agrees to within 6% with experimental data. We study the strong shock to elastic-plastic shock transition in tin and find that it is a continuous transition consistent with a transcritical

  5. Selective etching of TiN over TaN and vice versa in chlorine-containing Hyungjoo Shin,a)

    E-Print Network [OSTI]

    Economou, Demetre J.

    Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas Hyungjoo Shin 1 April 2013; published 18 April 2013) Selectivity of etching between physical vapor-deposited TiN selectivity of etching TiN over TaN by adding small amounts (

  6. Atmospheric pressure intercalation of oxygen via wrinkles between graphene and a metal

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Atmospheric pressure intercalation of oxygen via wrinkles between graphene and a metal Amina with graphene, an atomically thin sheet of carbon atoms in a honeycomb lattice. These prospects are urging, has reached such maturity that graphene now appears as an alternative to indium tin oxide

  7. Edge-emission electroluminescence study of as-grown vertical-cavity surface-emitting laser structures

    E-Print Network [OSTI]

    Ghosh, Sandip

    Edge-emission electroluminescence study of as-grown vertical-cavity surface-emitting laser 22 April 2000 We report polarized edge- and front-emission electroluminescence studies on red on pieces of as-grown wafers using indium­tin­oxide-coated glass electrodes. The front-emission spectra

  8. Copyright WILEYVCH Verlag GmbH & Co. KGaA,69469 Weinheim,Germany,2011 Supporting Information

    E-Print Network [OSTI]

    × 70 m. Indium tin oxide (ITO) coated glass (Sigma-Aldrich, surface resistivity 60-100 /sq) was used before it was rinsed by the etchant using a squeeze bottle. Finally, the sample was rinsed by de through a region of the sample away from the dimer array, that is, consisting of only the ITO-coated glass

  9. Radial Electron Collection in Dye-Sensitized Solar Cells

    E-Print Network [OSTI]

    Radial Electron Collection in Dye-Sensitized Solar Cells Alex B. F. Martinson,, Jeffrey W. Elam photoelectrode architecture consisting of concentric conducting and semiconducting nanotubes for use in dye-sensitized solar cells (DSSCs). Atomic layer deposition is employed to grow indium tin oxide (ITO) within a porous

  10. PHOTOELECTROCHEMICAL HYDROGEN PRODUCTION Eric Miller and Richard Rocheleau

    E-Print Network [OSTI]

    (indium-tin-oxide), and polymer-encapsulation films deposited at the University of Hawaii. The a-Si solar these catalytic coatings, solar-to-hydrogen efficiencies of 6% to 8% were expected for the a-Si based-stacks was reduced from 1.8 V to below 1 V, making water-splitting impossible, despite predicted solar

  11. www.afm-journal.de Vol. 23 No. 26 July 12 2013

    E-Print Network [OSTI]

    Rogers, John A.

    elastomeric shape-memorizing micro-optical components with transparent heater arrays of indium tin oxide (ITO of these and related micro-optical com- ponents is based on simple, single-step molding techniques, and can potentially and the formation of crosslinked shape memory polymer networks can be achieved in a single step via compression

  12. Process for light-driven hydrocarbon oxidation at ambient temperatures

    DOE Patents [OSTI]

    Shelnutt, John A. (Tijeras, NM)

    1990-01-01T23:59:59.000Z

    A photochemical reaction for the oxidation of hydrocarbons uses molecular oxygen as the oxidant. A reductive photoredox cycle that uses a tin(IV)- or antimony(V)-porphyrin photosensitizer generates the reducing equivalents required to activate oxygen. This artificial photosynthesis system drives a catalytic cycle, which mimics the cytochrome P.sub.450 reaction, to oxidize hydrocarbons. An iron(III)- or manganese(III)-porphyrin is used as the hydrocarbon-oxidation catalyst. Methylviologen can be used as a redox relay molecule to provide for electron-transfer from the reduced photosensitizer to the Fe or Mn porphyrin. The system is long-lived and may be used in photo-initiated spectroscopic studies of the reaction to determine reaction rates and intermediates.

  13. INTERIM RESULTS FROM A STUDY OF THE IMPACTS OF TIN(II) BASED MERCURY TREATMENT IN A SMALL STREAM ECOSYSTEM: TIMS BRANCH, SAVANNAH RIVER SITE

    SciTech Connect (OSTI)

    Looney, B.; Bryan, L.; Mathews, T.

    2012-03-30T23:59:59.000Z

    Mercury (Hg) has been identified as a 'persistent, bioaccumulative and toxic' pollutant with widespread impacts throughout North America and the world (EPA. 1997a, 1997b, 1998a, 1998b, 2000). Although most of the mercury in the environment is inorganic Hg, a small proportion of total Hg is transformed through the actions of aquatic microbes into methylmercury (MeHg). In contrast to virtually all other metals, MeHg biomagnifies or becomes increasingly concentrated as it is transferred through aquatic food chains so that the consumption of mercury contaminated fish is the primary route of this toxin to humans. For this reason, the ambient water quality criterion (AWQC) for mercury is based on a fish tissue endpoint rather than an aqueous Hg concentration, as the tissue concentration (e.g., < 0.3 {mu}g/g fillet) is considered to be a more consistent indicator of exposure and risk (EPA, 2001). Effective mercury remediation at point-source contaminated sites requires an understanding of the nature and magnitude of mercury inputs, and also knowledge of how these inputs must be controlled in order to achieve the desired reduction of mercury contamination in biota necessary for compliance with AWQC targets. One of the challenges to remediation is that mercury body burdens in fish are more closely linked to aqueous MeHg than to inorganic Hg concentrations (Sveinsdottir and Mason 2005), but MeHg production is not easily predicted or controlled. At point-source contaminated sites, mercury methylation is not only affected by the absolute mercury load, but also by the form of mercury loaded. In addition, once MeHg is formed, the hydrology, trophic structure, and water chemistry of a given system affect how it is transformed and transferred through the food chain to fish. Decreasing inorganic Hg concentrations and loading may often therefore be a more achievable remediation goal, but has led to mixed results in terms of responses in fish bioaccumulation. A number of source control measures have resulted in rapid responses in lake or reservoir fisheries (Joslin 1994, Turner and Southworth 1999; Orihel et al., 2007), but examples of similar responses in Hg-contaminated stream ecosystems are less common. Recent work suggests that stream systems may actually be more susceptible to mercury bioaccumulation than lakes, highlighting the need to better understand the ecological drivers of mercury bioaccumulation in stream-dwelling fish (Chasar et al. 2009, Ward et al. 2010). In the present study we examine the response of fish to remedial actions in Tims Branch, a point-source contaminated stream on the Department of Energy's (DOE) Savannah River Site in Aiken, South Carolina. This second order stream received inorganic mercury inputs at its headwaters from the 1950s-2000s which contaminated the water, sediments, and biota downstream. In 2007, an innovative mercury removal system using tin (II) chloride (stannous chloride, SnCl{sub 2}) was implemented at a pre-existing air stripper. Tin(II) reduces dissolved Hg (II) to Hg (0), which is removed by the air stripper. During this process, tin(II) is oxidized to tin (IV) which is expected to precipitate as colloidal tin(IV) oxides and hydroxides, particulate materials with relatively low toxicity (Hallas and Cooney, 1981, EPA 2002, ATSDR, 2005). The objectives of the present research are to provide an initial assessment of the net impacts of the tin(II) based mercury treatment on key biota and to document the distribution and fate of inorganic tin in this small stream ecosystem after the first several years of operating a full scale system. To support these objectives, we collected fish, sediment, water, invertebrates, and biofilm samples from Tims Branch to quantify the general behavior and accumulation patterns for mercury and tin in the ecosystem and to determine if the treatment process has resulted in: (1) a measurable beneficial impact on (i.e., decrease of) mercury concentration in upper trophic level fish and other biota; this is a key environmental endpoint since reducing mercury concen

  14. Formation of metal oxides by cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, S.; Anders, A.; Rubin, M.; Wang, Z.; Raoux, S.; Kong, F.; Brown, I.G.

    1995-03-01T23:59:59.000Z

    Metal oxide thin films are of interest for a number of applications. Cathodic arc deposition, an established, industrially applied technique for formation of nitrides (e.g. TiN), can also be used for metal oxide thin film formation. A cathodic arc plasma source with desired cathode material is operated in an oxygen atmosphere, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on ALS components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Tantalum oxide films are of interest for replacing polymer electrolytes. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/AI{sub 2}O{sub 3}/Si as possible basic structures for passive optoelectronic integrated circuits, and Al{sub 2-x}Er{sub x}O{sub 3} thin films with a variable Er concentration which is a potential component layer for the production of active optoelectronic integrated devices such as amplifiers or lasers at a wavelength of 1.53 {mu}m. Aluminum and chromium oxide films have been deposited on a number of substrates to impart improved corrosion resistance at high temperature. Titanium sub-oxides which are electrically conductive and corrosion resistant and stable in a number of aggressive environments have been deposited on various substrates. These sub-oxides are of great interest for use in electrochemical cells.

  15. A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN,,001...

    E-Print Network [OSTI]

    Gall, Daniel

    , low electrical resistivity 300 K TiN 111 15 cm Ref. 2 due to the overlap of N 2p and Ti 3d bands see. In the experiments, the AES spectra were collected using primary electron beam energies of 3, 5, 10, and 20 ke, Inc. 660 Major Elements in Spectrum: Ti, N Minor Elements in Spectrum: none Printed Spectra: 4 Spectra

  16. SnO2 Filled Mesoporous Tin Phosphate High Capacity Negative Electrode for Lithium Secondary Battery

    E-Print Network [OSTI]

    Cho, Jaephil

    SnO2 Filled Mesoporous Tin Phosphate High Capacity Negative Electrode for Lithium Secondary Battery insulators, and optics.1-6 On the other hand, their applications to electrode materials in lithium secondary batteries have received little attention because of the very limited candidates.7,8 Recently

  17. DFTand k.p modellingof the phase transitions of lead and tin halideperovskites for photovoltaic cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    DFTand k.p modellingof the phase transitions of lead and tin halideperovskites for photovoltaic Rennes, UMR 6226, 35042 Rennes, France KeywordsPerovskite, photovoltaic, first-principles calculations, k these hybrid semiconductor photovoltaic cells(HSPC) maydiffer from the one of dye-sensitized solar cells (DSSC

  18. Nontoxic and Abundant Copper Zinc Tin Sulfide Nanocrystals for Potential High-Temperature Thermoelectric Energy Harvesting

    E-Print Network [OSTI]

    Chen, Yong P.

    and abundant copper zinc tin sulfide (CZTS) nanocrystals for potential thermoelectric applications. The CZTS sulfide (CZTS) as a nontoxic and abundant thermoelectric material and characterized its thermoelectric materials, the elements in the composition of CZTS are in extremely high abundancethe natural reserves

  19. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01T23:59:59.000Z

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  20. JOURNAL DE PHYSIQUE Colloque C4, supplkment au no 5, Tome 35, Mai 1974,page C4-75 ON THE CPA IN A MUFFIN-TIN MODEL POTENTIAL

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    IN A MUFFIN-TIN MODEL POTENTIAL THEORY OF RANDOM SUBSTITUTIONAL ALLOYS B. L. GYORFFY and G. M. STOCKS HH Wills se simplifient pour des puits de potentiel muffin-tin sans recouvrement, et nous pourrons deriver une scattering amplitude t;(&)in the CPA for non-overlapping muffin-tin potential wells is simplified and a new

  1. JOURNAL DE PHYSIQUE Colloque C6, supplkment au no 12, Tome 37, DPcembre 1976,page C6-897 M~SSBAUERSTUDIES OF' lZ9IATOMS IMPLANTED IN a-AND fl-TIN

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ~SSBAUERSTUDIES OF' lZ9IATOMS IMPLANTED IN a- AND fl-TIN H. DE WAARD and G. J. KEMERINK Laboratorium voor Algemene on the basis of a simple model. Implants of 1291 in /3 tin yield two line spectra identicalto those found for implants in a tin converted to /3 tin by heating. Repeated phase transitions show that the impurity

  2. 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim5742 www.advmat.de

    E-Print Network [OSTI]

    -generation photo- voltaics, such as copper indium gallium selenide (CIGS)[5,6] and copper zinc tin sulfide (CZTS

  3. Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

    SciTech Connect (OSTI)

    Nichau, A.; Schnee, M.; Schubert, J.; Bernardy, P.; Hollaender, B.; Buca, D.; Mantl, S. [Peter Gruenberg Institute 9 (PGI9-IT), Forschungszentrum Juelich, 52425 Juelich (Germany); JARA-Fundamentals of Future Information Technologies, 52425 Juelich (Germany); Besmehn, A.; Breuer, U. [Central Division for Chemical Analysis (ZCH), Forschungszentrum Juelich, 52425 Juelich (Germany); Rubio-Zuazo, J.; Castro, G. R. [Spanish CRG BM25 Beamline-SpLine, European Synchrotron Radiation Facility (ESRF), Rue Jules Horowitz BP 220, F-38043 Grenoble, Cedex 09 (France); Muecklich, A.; Borany, J. von [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum' Dresden-Rossendorf e.V., 01314 Dresden (Germany)

    2013-04-21T23:59:59.000Z

    Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu-O bonds, whereby the diffusion of La was found to be less important.

  4. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V. (Troitsk, RU); Zhuikov, Boris L. (Troitsk, RU); Srivastava, Suresh C. (Setauket, NY); Ermolaev, Stanislav V. (Obninsk, RU); Togaeva, Natalia R. (Obninsk, RU)

    2012-01-17T23:59:59.000Z

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  5. Absolute orientation-dependent TiN(001) step energies from two-dimensional equilibrium island shape and

    E-Print Network [OSTI]

    Khare, Sanjay V.

    -independent scale factor k, the equilibrium chemical potential of the island per unit TiN mo- lecular area. We; Adatoms B1 NaCl-structure TiN is widely used for de- positing hard wear-resistant coatings on cutting. A related property, the step-edge stiffness, ~bbðuÞ bðuÞ þ d2 bðuÞ=du2 , is proportional to the island

  6. TiN coated aluminum electrodes for DC high voltage electron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01T23:59:59.000Z

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore »(Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached ?225?kV bias voltage while generating less than 100?pA of field emission (« less

  7. Use of plasma treatment to grow carbon nanotube forests on TiN substrate

    SciTech Connect (OSTI)

    Esconjauregui, S.; Bayer, B. C.; Fouquet, M.; Wirth, C. T.; Yan, F.; Xie, R.; Hofmann, S.; Robertson, J. [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Ducati, C. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Baehtz, C. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden Rossendorf e.V., P.O. Box 51 01 19, D-01314 Dresden (Germany); Castellarin-Cudia, C. [Sincrotrone Trieste SCpA, Strada Statale, 14 km 163.4, I-34149, Trieste (Italy); Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy); Bhardwaj, S.; Cepek, C. [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy)

    2011-06-01T23:59:59.000Z

    Hydrogen plasma pretreatment is used to enforce the growth of vertically-aligned carbon nanotube forests on TiN substrates. The evolution of the substrate, catalyst, and nanotubes are studied by in situ and ex-situ photoemission and X-ray diffraction in order to understand the growth mechanism. We find that TiN retains its crystallographic structure and its conductivity during plasma pretreatment and nanotube growth, which is confirmed by electrical measurements. Plasma pretreatment is found to favor the growth of nanotube forests by root growth, as it binds the catalyst nanoparticles more strongly to the substrate than thermal pretreatment. We find that plasma pretreatment time should be limited, otherwise poor or no growth is found.

  8. Symmetry Energy and the Isoscaling in Reactions on Enriched Tin Isotopes

    E-Print Network [OSTI]

    A. S. Danagulyan; A. R. Balabekyan; G. H. Hovhannisyan

    2009-02-17T23:59:59.000Z

    The coefficients of symmetry energy term for fragments with Z=4,11,12 measured in multifragmentation reactions initiated by proton and deuteron with energy of 3.65A GeV on enriched tin isotopes 112,118,120,124Sn are determined. The dependence of isoscaling parameter on the excitation energy, the temperature of fragmenting systems and the density ratio for heavy mass products are analised.

  9. Tripodal aminophenolate ligand complexes of aluminum(III), gallium(III), and indium(III) in water

    SciTech Connect (OSTI)

    Caravan, P.; Orvig, C. [Univ. of British Columbia, Vancouver (Canada)] [Univ. of British Columbia, Vancouver (Canada)

    1997-01-15T23:59:59.000Z

    This article focuses on the development of radiopharmaceuticals using new chelators of gallium and indium. The radionuclide kinetics and demetalation kinetics are of great consideration. This work explored the effects of ligand backbone variations on the selectivity of multidentate aminophenolate ligands among the trivalent metal ions Al(III), Ga(III) and In(III) in water. 54 refs., 16 figs., 3 tabs.

  10. Sputtered Molybdenum Bilayer Back Contact for Copper Indium Diselenide-Based Polycrystalline Thin-Film Solar Cells

    E-Print Network [OSTI]

    Scofield, John H.

    of the CIS or CIGS solar cell structure (not to scale). In these investigations, however, the metal layers-Film Solar Cells John H. Scofield1, A. Duda, and D. Albin National Renewable Energy Laboratory, 1617 Cole-of-the-art polycrystalline copper indium gallium diselenide solar cells with good results. Thin Solid Films, 260 (1), pp. 26

  11. Thng tin pht t my ghi m v khon chi tr phc li Bo Him Tht Nghip gn nht c th tip cn 24 ting

    E-Print Network [OSTI]

    Thông tin phát t máy ghi âm v khon chi tr phúc li Bo Him Tht Nghip gn nht có th tip cn 24 ting mt chiu, Th Hai n Th Sáu, hoc vào nhng ngày cui tun. Thông tin chi tr phúc li UI c cp nht hng ngày, và phn ánh sinh hot h s vào ngày làm vic trc ó. nhn c thông tin v khon chi tr ca mình, xin làm nhng s la chn

  12. Leaching of indium from obsolete liquid crystal displays: Comparing grinding with electrical disintegration in context of LCA

    SciTech Connect (OSTI)

    Dodbiba, Gjergj, E-mail: dodbiba@sys.t.u-tokyo.ac.jp [Department of System Innovation, Graduate School of Engineering, University of Tokyo (Japan); Nagai, Hiroki; Wang Lipang; Okaya, Katsunori; Fujita, Toyohisa [Department of System Innovation, Graduate School of Engineering, University of Tokyo (Japan)

    2012-10-15T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Two pre-treatment methods, prior to leaching of indium from obsolete LCD modules, were described. Black-Right-Pointing-Pointer Conventional grinding and electrical disintegration have been evaluated and compared in the context of LCA. Black-Right-Pointing-Pointer Experimental data on the leaching capacity for indium and the electricity consumption of equipment were inputted into the LCA model in order to compare the environmental performance of each method. Black-Right-Pointing-Pointer An estimate for the environmental performance was calculated as the sum of six impact categories. Black-Right-Pointing-Pointer Electrical disintegration method outperforms conventional grinding in all impact categories. - Abstract: In order to develop an effective recycling system for obsolete Liquid Crystal Displays (LCDs), which would enable both the leaching of indium (In) and the recovery of a pure glass fraction for recycling, an effective liberation or size-reduction method would be an important pre-treatment step. Therefore, in this study, two different types of liberation methods: (1) conventional grinding, and (2) electrical disintegration have been tested and evaluated in the context of Life Cycle Assessment (LCA). In other words, the above-mentioned methods were compared in order to find out the one that ensures the highest leaching capacity for indium, as well as the lowest environmental burden. One of the main findings of this study was that the electrical disintegration was the most effective liberation method, since it fully liberated the indium containing-layer, ensuring a leaching capacity of 968.5 mg-In/kg-LCD. In turn, the estimate for the environmental burden was approximately five times smaller when compared with the conventional grinding.

  13. Influence of surface defects and local structure on acid/base properties and oxidation pathways over metal oxide surfaces. Final report, June 1990--January 1997

    SciTech Connect (OSTI)

    Cox, D.F.

    1997-12-31T23:59:59.000Z

    This final report covers work done during project period one and project period two. All the work in project period one was focused on the selective oxidation of oxygenated hydrocarbons over the SnO{sub 2}(110) single crystal surface. In project period two, the emphasis was on the acid/base properties of SnO{sub 2}(110) as well as two different Cu{sub 2}O single crystal surfaces. Prior to the summary of results, a description of these different surfaces is given as background information. Results are described for the dissociation and reaction of Bronsted acids (methanol, formic acid, water, formaldehyde, acetone, propene, acetic acid, and carbon monoxide). Results from project period two include: ammonia adsorption, CO{sub 2} adsorption, propene adsorption and oxidation, with tin oxides; complimentary work with copper oxides; and STM investigations.

  14. Appearance of acute gouty arthritis on indium-111-labeled leukocyte scintigraphy

    SciTech Connect (OSTI)

    Palestro, C.J.; Vega, A.; Kim, C.K.; Swyer, A.J.; Goldsmith, S.J. (Mt. Sinai Medical Center, New York, NY (USA))

    1990-05-01T23:59:59.000Z

    Indium-111-labeled leukocyte scintigraphy was performed on a 66-yr-old male with polyarticular acute gouty arthritis. Images revealed intense labeled leukocyte accumulation in a pattern indistinguishable from septic arthritis, in both knees and ankles, and the metatarsophalangeal joint of both great toes, all of which were involved in the acute gouty attack. Joint aspirate as well as blood cultures were reported as no growth; the patient was treated with intravenous colchicine and ACTH for 10 days with dramatic improvement noted. Labeled leukocyte imaging, repeated 12 days after the initial study, revealed near total resolution of joint abnormalities, concordant with the patient's clinical improvement. This case demonstrates that while acute gouty arthritis is a potential pitfall in labeled leukocyte imaging, in the presence of known gout, it may provide a simple, objective, noninvasive method of evaluating patient response to therapy.

  15. Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

    E-Print Network [OSTI]

    Woolf, Alexander; Aharanovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel A; Hu, Evelyn L

    2014-01-01T23:59:59.000Z

    Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest ...

  16. LABORATORY REPORT ON THE REDUCTION AND STABILIZATION (IMMOBILIZATION) OF PERTECHNETATE TO TECHNETIUM DIOXIDE USING TIN(II)APATITE

    SciTech Connect (OSTI)

    DUNCAN JB; HAGERTY K; MOORE WP; RHODES RN; JOHNSON JM; MOORE RC

    2012-06-01T23:59:59.000Z

    This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-105 simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mo bile +7 state under acidic or oxygenated conditions within the tested period oftime (6 weeks). Previous work (RPP-RPT-39195, Assessment of Technetium Leachability in Cement-Stabilized Basin 43 Groundwater Brine) indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table A shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit. The loaded sample (200 mg of Sn(II)apatite loaded with O.311 mg of Tc-99) was subjected to different molarities of nitric acid to determine if the Sn(II)apatite would release the sequestered technetium. The acid was allowed to contact for 1 minute with gentle shaking ('1st wash'); the aqueous solution was then filtered, and the filtrate was analyzed for Tc-99. Table B shows the results ofthe nitric acid exposure. Another portion of acid was added, shaken for a minute, and filtered ('2nd wash'). The technetium-loaded Sn(II)apatite was also subjected to water leach tests. The loaded sample (0.2 g of Sn(II)apatite was loaded with 0.342 mg of Tc-99) was placed in a 200-mL distilled water column and sparged with air. Samples were taken weekly over a 6-week period, and the dissolved oxygen ranged from 8.4 to 8.7 mg/L (average 8.5 mg/L); all samples recorded less than the detection limit of 0.01 mg/L Tc-99. The mechanism by which TcO{sub 2} is sequestered and hence protected from re-oxidation appears to be an exchange with phosphate in the apatite lattice, as the phosphorus that appeared in solution after reaction with technetium was essentially the same moles of technetium that were taken up by the Sn(II)apatite (Table 6). Overall, the reduction of the mobile pertechnetate (+7) to the less mobile technetium dioxide (+4) by Sn(II)apatite and subsequent sequestration of the technetium in the material indicates that Sn(II)apatite is an excellent candidate for long-term immobilization of technetium. The indications are that the Sn(II)apatite will lend itself to sequestering and inhibiting the reoxidation to the mobile pertechnetate species, thus keeping the radionuclide out of the environment.

  17. (Data in metric tons, unless otherwise noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1997. Domestically

    E-Print Network [OSTI]

    --United States: 1993 1994 1995 1996 1997e Production, refinery -- -- -- -- -- Imports for consumption 73.4 70 for the indium market remains promising. World Refinery Production, Reserves, and Reserve Base: Refinery

  18. Real-time X-ray Diffraction Measurements of Shocked Polycrystalline Tin and Aluminum

    SciTech Connect (OSTI)

    Dane V. Morgan, Don Macy, Gerald Stevens

    2008-11-22T23:59:59.000Z

    A new, fast, single-pulse x-ray diffraction (XRD) diagnostic for determining phase transitions in shocked polycrystalline materials has been developed. The diagnostic consists of a 37-stage Marx bank high-voltage pulse generator coupled to a needle-and-washer electron beam diode via coaxial cable, producing line and bremsstrahlung x-ray emission in a 35-ns pulse. The characteristic K? lines from the selected anodes of silver and molybdenum are used to produce the diffraction patterns, with thin foil filters employed to remove the characteristic K? line emission. The x-ray beam passes through a pinhole collimator and is incident on the sample with an approximately 3-mm by 6-mm spot and 1° full-width-half-maximum (FWHM) angular divergence in a Bragg-reflecting geometry. For the experiments described in this report, the angle between the incident beam and the sample surface was 8.5°. A Debye-Scherrer diffraction image was produced on a phosphor located 76 mm from the polycrystalline sample surface. The phosphor image was coupled to a charge-coupled device (CCD) camera through a coherent fiberoptic bundle. Dynamic single-pulse XRD experiments were conducted with thin foil samples of tin, shock loaded with a 1-mm vitreous carbon back window. Detasheet high explosive with a 2-mm-thick aluminum buffer was used to shock the sample. Analysis of the dynamic shock-loaded tin XRD images revealed a phase transformation of the tin beta phase into an amorphous or liquid state. Identical experiments with shock-loaded aluminum indicated compression of the face-centered-cubic (fcc) aluminum lattice with no phase transformation.

  19. Isoscaling in Reactions on Enriched Tin Isotopes and Nuclear Symmetry Energy

    E-Print Network [OSTI]

    A. S. Danagulyan; A. R. Balabekyan; G. H. Hovhannisyan; N. A. Demekhina; I. Adam; V. G. Kalinnikov; M. I. Krivopustov; V. M. Tsoupko-Sitnikov

    2008-05-19T23:59:59.000Z

    Isospin effects in 12C ion induced reactions on enriched tin isotopes are investigated. The isoscaling parameter B is determined for different mass regions of product nuclei. It is shown that the isoscaling parameter is sensitive to the formation mechanism of products, and increases as the difference in the asymmetry is increasing. Using the exitatation energy obtained with the catcher technique temperatures, density ratio ro/ro0 for product nuclei in different mass regions and the values of symmetry energy coefficient for light mass regions of product nuclei for proton and deuteron induced reactions are determined.

  20. Suppression of tin precipitation in SiSn alloy layers by implanted carbon

    SciTech Connect (OSTI)

    Gaiduk, P. I., E-mail: gaiduk@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Belarusian State University, prosp. Nezavisimosti 4, 220030 Minsk (Belarus); Lundsgaard Hansen, J., E-mail: johnlh@phys.au.dk; Nylandsted Larsen, A., E-mail: anl@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Bregolin, F. L., E-mail: f.lipp-bregolin@hzdr.de; Skorupa, W., E-mail: W.Skorupa@hzdr.de [Department of Semiconductor Materials, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany)

    2014-06-09T23:59:59.000Z

    By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.

  1. Excitation energy and strength of the pygmy dipole resonance in stable tin isotopes

    E-Print Network [OSTI]

    B. Özel; J. Enders; H. Lenske; P. von Neumann-Cosel; I. Poltoratska; V. Yu. Ponomarev; A. Richter; D. Savran; N. Tsoneva

    2009-01-16T23:59:59.000Z

    The $^{112,120}$Sn$(\\gamma,\\gamma')$ reactions have been studied at the S-DALINAC. Electric dipole (E1) strength distributions have been determined including contributions from unresolved strength extracted by a fluctuation analysis. Together with available data on $^{116,124}$Sn, an experimental systematics of the pygmy dipole resonance (PDR) in stable even-mass tin isotopes is established. The PDR centroid excitation energies and summed strengths are in reasonable agreement with quasiparticle-phonon model calculations based on a nonrelativistic description of the mean field but disagree with relativistic quasiparticle random-phase approximation predictions.

  2. Tin City Long Range Radar Station Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f <MaintainedInformationThePty Ltd Jump to:OffshoreOpen EnergyTin

  3. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

    SciTech Connect (OSTI)

    Browne, David A.; Young, Erin C.; Lang, Jordan R.; Hurni, Christophe A.; Speck, James S. [Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States)

    2012-07-15T23:59:59.000Z

    The effects of NH{sub 3} flow, group III flux, and substrate growth temperature on indium incorporation and surface morphology have been investigated for bulk InGaN films grown by ammonia molecular beam epitaxy. The incorporation of unintentional impurity elements (H, C, O) in InGaN films was studied as a function of growth temperature for growth on polar (0001) GaN on sapphire templates, nonpolar (1010) bulk GaN, and semipolar (1122), (2021) bulk GaN substrates. Enhanced indium incorporation was observed on both (1010) and (2021) surfaces relative to c-plane, while reduced indium incorporation was observed on (1122) for co-loaded conditions. Indium incorporation was observed to increase with decreasing growth temperature for all planes, while being relatively unaffected by the group III flux rates for a 1:1 Ga:In ratio. Indium incorporation was found to increase at the expense of a decreased growth rate for higher ammonia flows; however, smooth surface morphology was consistently observed for growth on semipolar orientations. Increased concentrations of oxygen and hydrogen were observed on semipolar and nonpolar orientations with a clear trend of increased hydrogen incorporation with indium content.

  4. Oxidation catalyst

    DOE Patents [OSTI]

    Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

    2010-11-09T23:59:59.000Z

    The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

  5. Springs, Rings, and Spirals of Rutile-Structured Tin Oxide Nanobelts Rusen Yang and Zhong Lin Wang*,,

    E-Print Network [OSTI]

    Wang, Zhong L.

    compounds1,4 (In2O3, Ge3N4, Bi2S3, SiC, GaP, and Pb3O2Cl2). Among these materials, wurtzite-structured ZnO is the most outstanding member. The uniqueness of the wurtzite structure is its noncentral symmetry nanobelt, which eventually forms a rigid nanohelix.6 Besides the nanorings observed for wurtzite AlN due

  6. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

    1999-02-16T23:59:59.000Z

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  7. Proton elastic scattering from tin isotopes at 295 MeV and systematic change of neutron density distributions

    E-Print Network [OSTI]

    S. Terashima; H. Sakaguchi; H. Takeda; T. Ishikawa; M. Itoh; T. Kawabata; T. Murakami; M. Uchida; Y. Yasuda; M. Yosoi; J. Zenihiro; H. P. Yoshida; T. Noro; T. Ishida; S. Asaji; T. Yonemura

    2008-02-02T23:59:59.000Z

    Cross sections and analyzing powers for proton elastic scattering from $^{116,118,120,122,124}$Sn at 295 MeV have been measured for a momentum transfer of up to about 3.5 fm$^{-1}$ to deduce systematic changes of the neutron density distribution. We tuned the relativistic Love-Franey interaction to explain the proton elastic scattering of a nucleus whose density distribution is well known. Then, we applied this interaction to deduce the neutron density distributions of tin isotopes. The result of our analysis shows the clear systematic behavior of a gradual increase in the neutron skin thickness of tin isotopes with mass number.

  8. Experimental investigation of liquid spall in laser shock-loaded tin

    SciTech Connect (OSTI)

    Resseguier, T. de; Signor, L.; Dragon, A.; Boustie, M.; Roy, G.; Llorca, F. [Laboratoire de Combustion et de Detonique, ENSMA, 1 Avenue Clement Ader, 86961 Futuroscope Cedex (France); Commissariat a l'Energie Atomique, Centre de Valduc, 21120 Is-sur-Tille (France); Laboratoire de Mecanique et Physique des Materiaux, ENSMA, 1 Avenue Clement Ader, 86961 Futuroscope Cedex (France); Laboratoire de Combustion et de Detonique, ENSMA, 1 Avenue Clement Ader, 86961 Futuroscope Cedex (France); Commissariat a l'Energie Atomique, Centre de Valduc, 21120 Is-sur-Tille (France)

    2007-01-01T23:59:59.000Z

    When a metal is shocked above its melting pressure or melted on release, the tensile stresses generated upon reflection of the compressive pulse from a free surface are induced into a liquid state. Instead of the well-known spallation process observed in solid targets, cavitation is expected in the melted material, and liquid fragments are ejected from the free surface. Their size, velocity, and temperature distributions are issues of increasing interest, as well as their impact on other nearby materials, but data are limited on the subject. Here, we present an experimental study performed on tin samples subjected to high pressure laser shocks (ranging from about 50 to 200 GPa) of short duration ({approx}5 ns). The results include post-test observations of the ejecta recovered after impact on a polycarbonate shield and time-resolved measurements of the free surface velocity through the shield. For shock pressures below some 80 GPa, the velocity profiles are compared to the predictions of one-dimensional simulations involving a multiphase equation of state. For higher loading pressures, the emergence of the shock at the free surface produces a rapid loss of reflectivity so the particle velocity cannot be determined. In all cases, solidified fragments of tin are recovered on the shield. Their sizes, their shapes, and the induced damage depend significantly on shock pressure, and are indicative of a very wide range of ejection velocities. The data provide a basis for a phenomenological description of the process.

  9. Shell-model study of quadrupole collectivity in light tin isotopes

    E-Print Network [OSTI]

    Coraggio, L; Gargano, A; Itaco, N; Kuo, T T S

    2015-01-01T23:59:59.000Z

    A realistic shell-model study is performed for neutron-deficient tin isotopes up to mass A=108. All shell-model ingredients, namely two-body matrix elements, single-particle energies, and effective charges for electric quadrupole transition operators, have been calculated by way of the many-body perturbation theory, starting from a low-momentum interaction derived from the high-precision CD-Bonn free nucleon-nucleon potential. The focus has been put on the enhanced quadrupole collectivity of these nuclei, which is testified by the observed large B(E2;0+ -> 2+)s. Our results evidence the crucial role played by the Z=50 cross-shell excitations that need to be taken into account explicitly to obtain a satisfactory theoretical description of light tin isotopes. We find also that a relevant contribution comes from the calculated neutron effective charges, whose magnitudes exceed the standard empirical values. An original double-step procedure has been introduced to reduce effectively the model space in order to ov...

  10. Shell-model study of quadrupole collectivity in light tin isotopes

    E-Print Network [OSTI]

    L. Coraggio; A. Covello; A. Gargano; N. Itaco; T. T. S. Kuo

    2015-04-13T23:59:59.000Z

    A realistic shell-model study is performed for neutron-deficient tin isotopes up to mass A=108. All shell-model ingredients, namely two-body matrix elements, single-particle energies, and effective charges for electric quadrupole transition operators, have been calculated by way of the many-body perturbation theory, starting from a low-momentum interaction derived from the high-precision CD-Bonn free nucleon-nucleon potential. The focus has been put on the enhanced quadrupole collectivity of these nuclei, which is testified by the observed large B(E2;0+ -> 2+)s. Our results evidence the crucial role played by the Z=50 cross-shell excitations that need to be taken into account explicitly to obtain a satisfactory theoretical description of light tin isotopes. We find also that a relevant contribution comes from the calculated neutron effective charges, whose magnitudes exceed the standard empirical values. An original double-step procedure has been introduced to reduce effectively the model space in order to overcome the computational problem.

  11. JOURNAL DE PHYSIQUE Colloque C6, supplment au no 12, Tome 35, Dcembre 1974,page C6-379 DEBYE-WALLER FACTOR OF TIN-ANTIMONY SOLID SOLUTIONS

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -WALLER FACTOR OF TIN-ANTIMONY SOLID SOLUTIONS J. SITEK, J. CIRAK and J. LIPKA Slovak Technical University at % and 10at %tin in antimony. Values of the forceconstantratio have been obtained. The Mossbauer effect recoilless fraction for the sample with 3 at % (sample 1) and 10 at % (sample 2) of tin in antimony became

  12. JOURNAL DE PHYSIQUE Colloque C6, supplkment au no 8, Tome 39, aozit 1978,page C6-1097 AN EXPERIMENTAL TEST OF THE RIGID-MUFFIN-TIN APPROXIMATION USED IN THE THEORY OF

    E-Print Network [OSTI]

    Boyer, Edmond

    -1097 AN EXPERIMENTAL TEST OF THE RIGID-MUFFIN-TIN APPROXIMATION USED IN THE THEORY OF ELECTRON-PHONON INTERACTION W electron-phonon et B T sont prdsentdes. Abstract.- The validity of the rigidmuffin-tin approximation theoreticalwork on electron-phonon interaction in transition metals makes use of the rigid-muffin-tin (RMT

  13. (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,

    E-Print Network [OSTI]

    ,410 9,800 3,170 5,630 6,200 Shipments from Government stockpile excesses 4,540 60 -- -- -- Consumption: electrical, 29%; cans and containers, 18%; construction, 13%; transportation, 12%; and other, 28 as follows: primary metal consumed, $980 million; imports for consumption, refined tin, $1.36 billion

  14. The catalytic oxidation of propane and propylene with air: total aldehyde production and selectivity at low conversions.

    E-Print Network [OSTI]

    Looney, Franklin Sittig

    1950-01-01T23:59:59.000Z

    ~ Ths writer is izntebteg to pr, P G~ ~och Tor his assistance azsi guidance in this work aC to Br~ J+ 9 Kinds Tor his aery. suggestions eel Succor~ a The oxidation cf propane~ propylene and prcya~cregyimm mbetccres ctver a ~ aiucdna ~st in a flew... vere developed for rms with Iow propylene pressers Froa ths recncits of this study it, appears that the reaction yieldiccg aldehyde occurs in the fere part af the reactec bed Increased oxidation br' about by tunreased residence tins causes eccidation...

  15. MOSSBAUER STUDIES ON THE STATE OF TIN ATOMS SEGREGATED AT THE GRAIN BOUNDARY OF IRON AND IRON ALLOYS

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    MOSSBAUER STUDIES ON THE STATE OF TIN ATOMS SEGREGATED AT THE GRAIN BOUNDARY OF IRON AND IRON iron and iron alloys is investigated by Mossbauer source experiments. It is found that the electronic. The Mossbauer effect should be potentially a powerful technique to investigate the binding state of individual

  16. Tin-Based Reactive Solders for Ceramic/Metal Joints RAKESH R. KAPOOR and THOMAS W . EAGAR

    E-Print Network [OSTI]

    Eagar, Thomas W.

    ( { ) Tin-Based Reactive Solders for Ceramic/Metal Joints RAKESH R. KAPOOR and THOMAS W . EAGAR engine com- ponents), wear parts, tool materials, electrical feed- throughs, and metal contacts on ceramics. To overcome this problem, reactive metals are added to the filler metai.11- 181These reactive

  17. Unifying the strain and temperature scaling laws for the pinning force density in superconducting niobium-tin multifilamentary wires

    E-Print Network [OSTI]

    Hampshire, Damian

    niobium-tin multifilamentary wires Najib Cheggoura) and Damian P. Hampshire Superconductivity Group critical current density (Jc) tolerance to strain , performed on a bronze processed niobium force Fp( Jc B) in a series of niobium alloys.3 Later, several authors4­6 found that variable tem

  18. Surface spectroscopic studies of the deposition of TiN thin films from tetrakis-(dimethylamido)-titanium and ammonia

    E-Print Network [OSTI]

    Goodman, Wayne

    Surface spectroscopic studies of the deposition of TiN thin films from tetrakis-(dimethylamido)-titanium 1995 The adsorption and pyrolysis of tetrakis- dimethylamido -titanium TDMAT , Ti NMe2 4, on several , the growth of low-carbon-content 8 at. % titanium nitride films proceeds readily, via surface mediated

  19. Ohmic contact formation on n-type Ge by direct deposition of TiN

    SciTech Connect (OSTI)

    Iyota, Masatoshi; Yamamoto, Keisuke [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang, Dong; Yang, Haigui; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2011-05-09T23:59:59.000Z

    We succeeded in Ohmic contact formation on an n-Ge substrate by direct sputter deposition from a TiN target and subsequent postmetallization annealing (PMA) at 350 deg. C. The Schottky barrier heights of the TiN/n-Ge and TiN/p-Ge contacts were 0.18 eV and 0.50 eV, respectively, and were maintained up to a PMA temperature of 550 deg. C. These electrical characteristics are likely to be associated with an approximately 1-nm-thick interlayer formed at a TiN/Ge interface, which leads to the alleviation of the Fermi level pinning. We demonstrated the validity of the TiN/n-Ge contact using an n{sup +}/p junction, which showed an excellent ideal factor of n=1.01.

  20. Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, S.C.; Meinken, G.E.; Mausner, L.F.; Atkins, H.L.

    1998-12-29T23:59:59.000Z

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients. 5 figs.

  1. Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Mausner, Leonard F. (Stony Brook, NY); Atkins, Harold L. (Setauket, NY)

    1998-12-29T23:59:59.000Z

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

  2. Orbital dependent nucleonic pairing in the lightest known isotopes of tin

    E-Print Network [OSTI]

    Iain G. Darby; Robert K. Grzywacz; Jon C. Batchelder; Carrol R. Bingham; Lucia Cartegni; Carl J. Gross; Morten Hjorth-Jensen; David T. Joss; Sean N. Liddick; Witold Nazarewicz; Stephen Padgett; Robert D. Page; Thomas Papenbrock; Mustafa M. Rajabali; Jimmy Rotureau; Krzysztof P. Rykaczewski

    2010-09-11T23:59:59.000Z

    By studying the 109Xe-->105Te-->101Sn superallowed alpha-decay chain, we observe low-lying states in 101Sn, the one-neutron system outside doubly magic 100Sn. We find that the spins of the ground state (J = 7=2) and first excited state (J = 5=2) in 101Sn are reversed with respect to the traditional level ordering postulated for 103Sn and the heavier tin isotopes. Through simple arguments and state-of-the-art shell model calculations we explain this unexpected switch in terms of a transition from the single-particle regime to the collective mode in which orbital-dependent pairing correlations, dominate.

  3. Tin Valence and Local Environments in Silicate Glasses as Determined From X-ray Absorption Spectroscopy

    SciTech Connect (OSTI)

    McKeown,D.; Buechele, A.; Gan, H.; Pegg, I.

    2008-01-01T23:59:59.000Z

    X-ray absorption spectroscopy (XAS) was used to characterize the tin (Sn) environments in four borosilicate glass nuclear waste formulations, two silicate float glasses, and three potassium aluminosilicate glasses. Sn K-edge XAS data of most glasses investigated indicate Sn4+O6 units with average Sn-O distances near 2.03 Angstroms. XAS data for a float glass fabricated under reducing conditions show a mixture of Sn4+O6 and Sn2+O4 sites. XAS data for three glasses indicate Sn-Sn distances ranging from 3.43 to 3.53 Angstroms, that suggest Sn4+O6 units linking with each other, while the 4.96 Angstroms Sn-Sn distance for one waste glass suggests clustering of unlinked Sn4+O6 units.

  4. Effect of Thermal Annealing in Ammonia on the Properties of InGaN Nanowires with Different Indium Concentrations

    SciTech Connect (OSTI)

    Hahn, Cristopher; Cordones, Amy; Andrews, Sean; Gao, Hanwei; Fu, Anthony; Leone, Stephen; Yang, Peidong

    2012-10-02T23:59:59.000Z

    The utility of an annealing procedure in ammonia ambient is investigated for improving the optical characteristics of InxGa1?xN nanowires (0.07 ? x ? 0.42) grown on c-Al2O3 using a halide chemical vapor deposition method. Morphological studies using scanning electron microscopy confirm that the nanowire morphology is retained after annealing in ammonia at temperatures up to 800 ?C. However, significant indium etching and composition inhomogeneities are observed for higher indium composition nanowires (x = 0.28, 0.42), as measured by energy-dispersive X-ray spectroscopy and Z-contrast scanning transmission electron microscopy. Structural analyses, using X-ray diffraction and high-resolution transmission electron microscopy, indicate that this is a result of the greater thermal instability of higher indium composition nanowires. The effect of these structural changes on the optical quality of InGaN nanowires is examined using steady-state and time-resolved photoluminescence measurements. Annealing in ammonia enhances the integrated photoluminescence intensity of InxGa1?xN nanowires by up to a factor of 4.11 ? 0.03 (for x = 0.42) by increasing the rate of radiative recombination. Fitting of photoluminescence decay curves to a Kohlrausch stretched exponential indicates that this increase is directly related to a larger distribution of recombination rates from composition inhomogeneities caused by annealing. The results demonstrate the role of thermal instability on the improved optical properties of InGaN nanowires annealed in ammonia.

  5. Method for producing nanostructured metal-oxides

    DOE Patents [OSTI]

    Tillotson, Thomas M.; Simpson, Randall L.; Hrubesh, Lawrence W.; Gash, Alexander

    2006-01-17T23:59:59.000Z

    A synthetic route for producing nanostructure metal-oxide-based materials using sol-gel processing. This procedure employs the use of stable and inexpensive hydrated-metal inorganic salts and environmentally friendly solvents such as water and ethanol. The synthesis involves the dissolution of the metal salt in a solvent followed by the addition of a proton scavenger, which induces gel formation in a timely manner. Both critical point (supercritical extraction) and atmospheric (low temperature evaporation) drying may be employed to produce monolithic aerogels and xerogels, respectively. Using this method synthesis of metal-oxide nanostructured materials have been carried out using inorganic salts, such as of Fe3+, Cr3+, Al3+, Ga3+, In3+, Hf4+, Sn4+, Zr4+, Nb5+, W6+, Pr3+, Er3+, Nd3+, Ce3+, U3+ and Y3+. The process is general and nanostructured metal-oxides from the following elements of the periodic table can be made: Groups 2 through 13, part of Group 14 (germanium, tin, lead), part of Group 15 (antimony, bismuth), part of Group 16 (polonium), and the lanthanides and actinides. The sol-gel processing allows for the addition of insoluble materials (e.g., metals or polymers) to the viscous sol, just before gelation, to produce a uniformly distributed nanocomposites upon gelation. As an example, energetic nanocomposites of FexOy gel with distributed Al metal are readily made. The compositions are stable, safe, and can be readily ignited to thermitic reaction.

  6. Asphalt Oxidation Kinetics and Pavement Oxidation Modeling

    E-Print Network [OSTI]

    Jin, Xin

    2012-07-16T23:59:59.000Z

    Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement...

  7. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    DOE Patents [OSTI]

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06T23:59:59.000Z

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  8. In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells

    SciTech Connect (OSTI)

    Sowinska, Malgorzata, E-mail: sowinska@ihp-microelectronics.com; Bertaud, Thomas; Walczyk, Damian; Calka, Pauline; Walczyk, Christian [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Thiess, Sebastian [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Alff, Lambert [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

    2014-05-28T23:59:59.000Z

    In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

  9. Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

    SciTech Connect (OSTI)

    Shin, Hyungjoo; Zhu Weiye; Liu Lei; Sridhar, Shyam; Donnelly, Vincent M.; Economou, Demetre J. [Plasma Processing Laboratory, Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204-4004 (United States); Lenox, Chet; Lii, Tom [Texas Instruments Inc., Dallas, Texas 75243 (United States)

    2013-05-15T23:59:59.000Z

    Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaN etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.

  10. Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin

    SciTech Connect (OSTI)

    Bogart, Timothy D.; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2014-10-30T23:59:59.000Z

    Silicon (Si) has a very high lithium storage capacity and is being explored as a negative electrode material in lithium-ion batteries (LIBs). Si nanowires can exhibit relatively stable performance for many cycles of charging; however, conductive carbon must often be added to the electrode layer to improve the rate capability due to the relatively low electrical conductivity of Si. The added carbon lowers the capacity of the electrode. Here, we show that the rate capability of Si in LIBs can be substantially enhanced by incorporating tin (Sn) into Si nanowires. The solubility of Sn in Si is very low (0.015 at%); yet, Sn used as a seed for supercritical fluid–liquid–solid (SFLS) growth can be trapped in Si nanowires with relatively high concentration (10 at%). Such Sn-containing Si nanowires and no added conductive carbon in the electrode layer, could be cycled in LIBs with high capacity (*1000 mA h g*1 over 100 cycles) at a current density of 2.8 A g*1 (1 C). Capacities exceeding that of graphite could still be reached at cycle rates as high as 2 C. Real-time in situ transmission electron microscopy (TEM) revealed that lithiation occurs five times faster in Si nanowires with significant amounts of Sn than in the Si nanowires without Sn, and twice as fast as in nanowires that were coated with carbon.

  11. Topological size effect in tin-dioxide cluster films produced by reactive sputtering

    SciTech Connect (OSTI)

    Maksimenko, L. S.; Matyash, I. E.; Mishchuk, O. N.; Rudenko, S. P.; Serdega, B. K., E-mail: bserdega@gmail.com [National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

    2013-07-15T23:59:59.000Z

    The optical properties of tin-dioxide nanofilms produced by reactive sputtering are studied by the internal reflection technique and modulation polarimetry. The angular and spectral characteristics of the reflection coefficients R{sub s}{sup 2} and R{sub p}{sup 2}are studied for linear-polarized radiations, for which the wave electric field is, correspondingly, orthogonal and parallel to the plane of incidence. The characteristics of the physical difference between the reflection coefficients, {rho} = R{sub s}{sup 2}-R{sub p}{sup 2}, are studied as well. From the experimental results, it follows that (i) the doping-induced finite conductivity of the film brings about the appearance of surface plasmon resonance; (ii) the shape of the spectral and angular characteristics of the parameter {rho} is indicative of the cluster structure of the film, which is in agreement with the phase topology data obtained by atomic force microscopy; and (iii) the nonspherical shape of the clusters is responsible for the splitting of resonances and for the dependence of their parameters on the angle of incidence, which defines the topological size effect.

  12. In situ formation of tin nanocrystals embedded in silicon nitride matrix

    SciTech Connect (OSTI)

    Huang Shujuan; So, Yong Heng; Conibeer, Gavin; Green, Martin A. [ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, New South Wales 2052 (Australia)

    2009-06-15T23:59:59.000Z

    Tin (Sn) nanocrystals (NCs) embedded in a silicon nitride (Si{sub 3}N{sub 4}) matrix have been fabricated in a cosputtering process employing low temperature (100 deg. C) substrate heating. Transmission electron microscopy (TEM) showed the formation of uniformly sized Sn NCs of 5.2+-0.9 nm evenly distributed in the Si{sub 3}N{sub 4} matrix. Both TEM and x-ray diffraction measurements showed that the Sn NCs adopted the semimetallic tetragonal beta-Sn structure rather than the cubic semiconducting alpha-Sn structure. X-ray photoelectron spectroscopy revealed that the semimetallic state (Sn{sup 0}) is the major component of Sn in the sample films. Our investigation demonstrates a pronounced effect of the substrate temperature on the formation of Sn NCs. The mechanism of in situ formation of Sn NCs is discussed. We suggest that the formation of uniformly sized Sn NCs is correlated with lowering the surface mobility of the nuclei due to the presence of the cosputtered Si{sub 3}N{sub 4}.

  13. Thng 9, 2011 Xu t b n b i O ce of International A airs M i thng tin trong t ri ny u c trn m ng. c thng tin chi ti t v c p nh t, xin vui lng

    E-Print Network [OSTI]

    Wu, Yih-Min

    Tháng 9, 2011 Xu t b n b i O ce of International A airs M i thông tin trong t ri này u có trên m ng. có thông tin chi ti t và c p nh t, xin vui lòng tra c u t i website c a chúng tôi : httpThông tin nhanh NTU, tr ng i h c t ng h p l n nh t và lâu i nh t ài Loan, ã thông báo các chng trình ào

  14. Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated

    E-Print Network [OSTI]

    Allen, Leslie H.

    Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W through the 106-nm-thick TiN film. W piles up at the TiN/Ti interface, while F rapidly saturates the TiN-sectional and scanning transmission electron microscopy analyses demonstrate that WF6 penetrates into the TiN layer

  15. High-rate and low-temperature synthesis of TiO2, TiN, and TiO2/TiN/TiO2 thin films and study of their optical and interfacial characteristics

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    High-rate and low-temperature synthesis of TiO2, TiN, and TiO2/TiN/TiO2 thin films and study with unbalanced magnetrons, we deposited advanced inorganic functional thin films such as TiO2, TiN, and TiO2/Ti sputtering. The TiO2 101 and TiN 100 thin films were stoichiometric and polycrystalline but highly oriented

  16. Photo-oxidation catalysts

    DOE Patents [OSTI]

    Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

    2009-07-14T23:59:59.000Z

    Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

  17. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

    2006-04-04T23:59:59.000Z

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  18. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

    2004-07-13T23:59:59.000Z

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  19. On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition

    SciTech Connect (OSTI)

    Abrutis, Adulfas, E-mail: adulfas.abrutis@chf.vu.lt; Silimavicus, Laimis; Kubilius, Virgaudas; Murauskas, Tomas; Saltyte, Zita; Kuprenaite, Sabina; Plausinaitiene, Valentina [Faculty of Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius (Lithuania)

    2014-03-15T23:59:59.000Z

    Hot-wire chemical vapor deposition (HW-CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide (TCO) films. Indium (In)-doped ZnO films were deposited using a cold wall pulsed liquid injection CVD system with three nichrome wires installed at a distance of 2?cm from the substrate holder. The wires were heated by an AC current in the range of 0–10 A. Zn and In 2,2,6,6-tetramethyl-3,5-heptanedionates dissolved in 1,2-dimethoxyethane were used as precursors. The hot wires had a marked effect on the growth rates of ZnO, In-doped ZnO, and In{sub 2}O{sub 3} films; at a current of 6–10 A, growth rates were increased by a factor of ?10–20 compared with those of traditional CVD at the same substrate temperature (400?°C). In-doped ZnO films with thickness of ?150?nm deposited on sapphire-R grown at a wire current of 9?A exhibited a resistivity of ?2?×?10{sup ?3} ?cm and transparency of >90% in the visible spectral range. These initial results reveal the potential of HW-CVD for the growth of TCOs.

  20. Oxidation of propylene over copper oxide catalysts

    E-Print Network [OSTI]

    Billingsley, David Stuart

    1958-01-01T23:59:59.000Z

    results were obtained using an asbestos supported CuO-Cr203 catalyst. Venkataramam and his co-workers (66) studied the catalytic oxidation of ethylene to ethylene oxide by the fluidized bed technique using a static bed of catalyst. Precipitated Ag20... in the air-ethylene ratio to maintain good yields of ethylene oxide. Wan (68) reported the oxidation of ethylene to acetaldehyde by use of a silver catalyst in a 5/16 dnch inner diameter stainless steel tube with a catalyst bed up to 30. 3 centimeters...

  1. Cerium Oxide Coating for Oxidation Reduction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Award In order to produce power more efficiently and cleanly, the next generation of power plant boilers, turbines, solid oxide fuel cells (SOFCs) and other essential...

  2. Solid-state source of atomic oxygen for low-temperature oxidation processes: Application to pulsed laser deposition of TiO{sub 2}:N films

    SciTech Connect (OSTI)

    Ojima, Daiki; Chiba, Tetsuya; Shima, Kazunari; Hiramatsu, Hidenori; Hosono, Hideo; Hayashi, Katsuro [Materials and Structures Laboratory, Tokyo Institute of Technology, R3-34, Nagatsuta 4259, Yokohama 226-8503 (Japan)

    2012-02-15T23:59:59.000Z

    An atomic oxygen (AO) source has been redesigned to coordinate with a pulsed laser deposition system and used to grow nitrogen-doped TiO{sub 2} films by deposition of TiN and simultaneous irradiation of the substrate with AO. The AO source uses an incandescently heated thin tube of zirconia as an oxygen permeation media to generate pure AO of low kinetic energy. The emission flux is calibrated using a silver-coated quartz crystal microbalance. The thin shape of the probe and transverse emission geometry of this emission device allow the emission area to be positioned close to the substrate surface, enhancing the irradiation flux at the substrate. AO irradiation is crucial for formation of TiO{sub 2} phases via oxidation of the deposited TiN laser plume, and is effective for decrease of the substrate temperature for crystallization of anatase phase to as low as around 200 deg. C.

  3. Highly Conductive Germanium Nanowires Made by a Simple, One-Step...

    Office of Science (SC) Website

    Page Click to enlarge photo. Enlarge Photo Image courtesy of Jay Switzer Scanning electron micrograph image of germanium nanowires electrodeposited onto an indium tin...

  4. Modeling of plasma-target interaction during reactive magnetron sputtering of TiN

    SciTech Connect (OSTI)

    Moeller, W.; Guettler, D. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)

    2007-11-01T23:59:59.000Z

    The nitrogen incorporation at the target during reactive magnetron sputtering of TiN is described by a simple stationary global model of the magnetron plasma, in combination with an analytical two-layer stationary surface model or dynamic collisional computer simulation (TRIDYN) of the surface processes. Results are shown for different nitrogen gas additions in Ar/N{sub 2} and Xe/N{sub 2} gas mixtures at a total pressure of 0.3 Pa and a magnetron current of 0.3 A. The nitrogen incorporation predicted by the analytical model is significantly less than obtained from computer simulation. The computer simulation yields nitrogen depth profiles which extend to about 2.5 nm, exhibiting a quasirectangular shape in case of stoichiometric saturation with an integrated nitrogen areal density of {approx}1.25x10{sup 16} N/cm{sup 2}. The stationary-state nitrogen incorporation results from the balance of surface adsorption in connection with recoil implantation, direct ion implantation, and resputtering. The most relevant species are nitrogen gas molecules for adsorption, molecular nitrogen ions for implantation, and inert gas ions for recoil implantation and sputtering. The model results are in good agreement with experiment provided that nonzero sticking of nitrogen gas molecules is assumed on the unsaturated surface. The analytical surface model is preferable, which favors the picture of a continuous transition to bulk and surface saturation rather than discrete local saturation which is inherent in TRIDYN. Also the relative nitrogen incorporation for Xe/N{sub 2} versus Ar/N{sub 2} gas mixtures is well described.

  5. Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating

    DOE Patents [OSTI]

    Howard, Stanley R. (Windsor, SC); Korinko, Paul S. (Aiken, SC)

    2008-05-27T23:59:59.000Z

    A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

  6. Tubular Organization of SnO? Nanocrystallites for Improved Lithium Ion Battery Anode Performance

    E-Print Network [OSTI]

    Wang, Yong

    Porous tin oxide nanotubes were obtained by vacuum infiltration of tin oxide nanoparticles into porous aluminum oxide membranes, followed by calcination. The porous tin oxide nanotube arrays so prepared were characterized ...

  7. Formation of Light Isotopes by Protons and Deuterons of 3.65 GeV/nucleon on Separated Tin Isotopes

    E-Print Network [OSTI]

    A. R. Balabekyan; A. S. Danagulyan; J. R. Drnoyan; G. H. Hovhannisyan; J. Adam; V. G. Kalinnikov; M. I. Krivopustov; V. S. Pronskikh; V. I. Stegailov; A. A. Solnyshkin; P. Chaloun; V. M. Tsoupko-Sitnikov; S. G. Mashnik; K. K. Gudima

    2005-06-22T23:59:59.000Z

    We measure cross sections for residual nuclide formation in the mass range 6 tin isotopes (112-Sn, 118-Sn, 120-Sn, 124-Sn). The experimental data are compared with calculations by the codes FLUKA, LAHET, CEM03, and LAQGSM03. Scaling behavior is observed for the whole mass region of residual nuclei, showing a possible multifragmentation mechanism for the formation of light products (6 < A < 31). Our analysis of the isoscaling dependence also shows a possible contribution of multifragmentation to the production of heavier nuclides, in the mass region 39 < A < 81.

  8. The tin impurity in Bi0.5Sb1.5Te3 alloys | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic|Industrial Sector,Department of Energy (DOE) notice ) )The tin

  9. Tin-117m-labeled stannic (Sn/sup 4 +/) chelate of diethylenetriamine pentaacetic acid (DTPA) for application in diagnosis and therapy

    DOE Patents [OSTI]

    Srivastava, S.C.; Meinken, G.E.; Richards, P.

    1983-08-25T23:59:59.000Z

    The radiopharmaceutical reagents of this invention and the class of Tin-117m radiopharmaceuticals are therapeutic and diagnostic agents that incorporate gamma-emitting nuclides that localize in bone after intravenous injection in mammals (mice, rats, dogs, and rabbits). Images reflecting bone structure or function can then be obtained by a scintillation camera that detects the distribution of ionizing radiation emitted by the radioactive agent. Tin-117m-labeled chelates of stannic tin localize almost exclusively in cortical bone. Upon intravenous injection of the reagent, the preferred chelates are phosphonate compounds, preferable, PYP, MDP, EHDP, and DTPA. This class of reagents is therapeutically and diagnostically useful in skeletal scintigraphy and for the radiotherapy of bone tumors and other disorders.

  10. THE MICROSTRUCTURAL LOCATION OF THE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR

    E-Print Network [OSTI]

    Clarke, D. E

    2011-01-01T23:59:59.000Z

    OXIDE PHASE IN A ZINC OXIDE VARISTOR MICROSI'RUCTIJRALMETAL OXIDE PHASE IN A ZINC OXIDE VARISTOR David R. Clarke

  11. Epitaxial growth and thermal stability of Fe{sub 4}N film on TiN buffered Si(001) substrate

    SciTech Connect (OSTI)

    Xiang, H.; Shi, F.-Y.; Voyles, P. M.; Chang, Y. A. [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Rzchowski, M. S. [Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2011-04-01T23:59:59.000Z

    Epitaxial Fe{sub 4}N thin films were grown on TiN buffered Si(001) substrate by dc reactive sputtering deposition at different substrate temperatures. Fe{sub 4}N films epitaxially grew on TiN within the substrate temperature range from 250 to 350 deg. C. Lower than 250 deg. C there will be some other Fe{sub x}N compounds formed and higher than 400 deg. C there will be only Fe left. Fe{sub 4}N is metastable and the postannealing process in vacuum will decompose Fe{sub 4}N film to Fe. However, introducing 30% N{sub 2} in the postannealing atmosphere can stabilize the Fe{sub 4}N up to 350 deg. C in the (Ar,N{sub 2}) gas mixture. The surface roughness of the epitaxial Fe{sub 4}N films decreases with film thickness. There is in-plane biaxial magnetic anisotropy of epitaxial Fe{sub 4}N(001) on Si(001) with the [100] easy direction.

  12. Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide

    E-Print Network [OSTI]

    Kim, Sehun

    Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO) and reduced graphene oxide (rGO) films grown on silicon substrate to cause the aniline to azobenzene oxidation

  13. Oxidation Resistant Graphite Studies

    SciTech Connect (OSTI)

    W. Windes; R. Smith

    2014-07-01T23:59:59.000Z

    The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740°C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

  14. formation of the main deposit. At lower current densities, it is possible to deposit only this extremely thin tin film: it is 5 nm thick

    E-Print Network [OSTI]

    Stocker, Thomas

    . Whereas the 200-nm copper and 300-nm tin films in Fig. 4 have a thickness close to that predicted. We propose the following mechan- istic explanation of this effect. First, in thin cells problems of Li rechargeable batteries. Indeed, cycling efficiency of Li batteries is drastically reduced

  15. Growth and Properties of (001)-oriented Pb(Zr?.??Ti?.??)O?/LaNiO? Films on Si(001) Substrates with TiN Buffer Layers

    E-Print Network [OSTI]

    Zhu, Tie-Jun

    Pulsed laser deposition has been used to grow Pb(Zr?.??Ti?.??)O? (PZT)/LaNiO? (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO?-coated Si(001) substrates, using TiN buffer layers. ...

  16. METAL OXIDE NANOPARTICLES

    SciTech Connect (OSTI)

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01T23:59:59.000Z

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  17. EFFECT OF THERMAL PROCESSES ON COPPER-TIN ALLOYS FOR ZINC GETTERING

    SciTech Connect (OSTI)

    Korinko, P.; Golyski, M.

    2013-11-01T23:59:59.000Z

    A contamination mitigation plan was initiated to address the discovery of radioactive zinc‐65 in a glovebox. A near term solution was developed, installation of heated filters in the glovebox piping. This solution is effective at retaining the zinc in the currently contaminated area, but the gamma emitting contaminant is still present in a system designed for tritium beta. A project was initiated to develop a solution to contain the {sup 65}Zn in the furnace module. Copper and bronze (a Cu/Sn alloy) were found to be candidate materials to combine with zinc‐65 vapor, using thermodynamic calculations. A series of binary Cu/Sn alloys were developed (after determining that commercial alloys were unacceptable), that were found to be effective traps of zinc vapor. The task described in this report was undertaken to determine if the bronze substrates would retain their zinc gettering capability after being exposed to simulated extraction conditions with oxidizing and reducing gases. Pure copper and three bronze alloys were prepared, exposed to varying oxidation conditions from 250 to 450{degree}C, then exposed to varying reduction conditions in He-H{sub 2} from 250-450{degree}C, and finally exposed to zinc vapor at 350{degree}C for four hours. The samples were characterized using scanning electron microscopy, X-ray diffraction, differential thermal analysis, mass change, and visual observation. It was observed that the as fabricated samples and the reduced samples all retained their zinc gettering capacity while samples in the "as-oxidized" condition exhibited losses in zinc gettering capacity. Over the range of conditions tested, i.e., composition, oxidation temperature, and reduction temperature, no particular sample composition appeared better. Samples reduced at 350{degree}C exhibited the greatest zinc capacity, although there were some testing anomalies associated with these samples. This work clearly demonstrated that the zinc gettering was not adversely affected by exposure to simulated process conditions and a full scale lithium and zinc trap should be fabricated for testing in the Tritium Extraction Facility.

  18. Barium oxide, calcium oxide, magnesia, and alkali oxide free glass

    DOE Patents [OSTI]

    Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

    2013-09-24T23:59:59.000Z

    A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

  19. Mixed oxide solid solutions

    DOE Patents [OSTI]

    Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

    2003-01-01T23:59:59.000Z

    The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

  20. Method and system for the combination of non-thermal plasma and metal/metal oxide doped .gamma.-alumina catalysts for diesel engine exhaust aftertreatment system

    DOE Patents [OSTI]

    Aardahl, Christopher L. (Richland, WA); Balmer-Miller, Mari Lou (West Richland, WA); Chanda, Ashok (Peoria, IL); Habeger, Craig F. (West Richland, WA); Koshkarian, Kent A. (Peoria, IL); Park, Paul W. (Peoria, IL)

    2006-07-25T23:59:59.000Z

    The present disclosure pertains to a system and method for treatment of oxygen rich exhaust and more specifically to a method and system that combines non-thermal plasma with a metal doped .gamma.-alumina catalyst. Current catalyst systems for the treatment of oxygen rich exhaust are capable of achieving only approximately 7 to 12% NO.sub.x reduction as a passive system and only 25 40% reduction when a supplemental hydrocarbon reductant is injected into the exhaust stream. It has been found that treatment of an oxygen rich exhaust initially with a non-thermal plasma and followed by subsequent treatment with a metal doped .gamma.-alumina prepared by the sol gel method is capable of increasing the NO.sub.x reduction to a level of approximately 90% in the absence of SO.sub.2 and 80% in the presence of 20 ppm of SO.sub.2. Especially useful metals have been found to be indium, gallium, and tin.

  1. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    E-Print Network [OSTI]

    Flewitt, Andrew J.; Powell, M.J.

    2014-01-01T23:59:59.000Z

    of the display industry as it moves from liquid crystal to organic light emitting diode technology and with requirements for larger areas and higher resolutions. A number of alternative material systems to a-Si:H have emerged, including organic semiconductors...

  2. Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint

    SciTech Connect (OSTI)

    Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

    2012-08-01T23:59:59.000Z

    Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

  3. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    SciTech Connect (OSTI)

    Wissman, J., E-mail: jwissman@andrew.cmu.edu [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Finkenauer, L. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Deseri, L. [DICAM, Department of Mechanical, Civil and Environmental Engineering, University of Trento, via Mesiano 77 38123 Trento (Italy); TMHRI-Department of Nanomedicine, The Methodist Hospital Research Institute, 6565 Fannin St., MS B-490 Houston, Texas 77030 (United States); Mechanics, Materials and Computing Center, CEE and ME-CIT, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Majidi, C. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Robotics Institute and Department of Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-10-14T23:59:59.000Z

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage ? to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ?. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of ?. Based on this theory, we predict a dependency of ? on ? that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  4. Electrode with transparent series resistance for uniform switching of optical modulation devices

    SciTech Connect (OSTI)

    Tench, D. Morgan (Camarillo, CA); Cunningham, Michael A. (Thousand Oaks, CA); Kobrin, Paul H. (Newbury Park, CA)

    2008-01-08T23:59:59.000Z

    Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

  5. Cerium Oxide Coating for Oxidation Reduction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C oCNMSStaffCerium Oxide Coating for Oxidation

  6. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

    1988-01-01T23:59:59.000Z

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  7. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04T23:59:59.000Z

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  8. Reducible oxide based catalysts

    DOE Patents [OSTI]

    Thompson, Levi T.; Kim, Chang Hwan; Bej, Shyamal K.

    2010-04-06T23:59:59.000Z

    A catalyst is disclosed herein. The catalyst includes a reducible oxide support and at least one noble metal fixed on the reducible oxide support. The noble metal(s) is loaded on the support at a substantially constant temperature and pH.

  9. X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

    E-Print Network [OSTI]

    to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron for photovoltaic applications by reducing interface recombination and improving device performance.12

  10. Tin oxide thick film by doping rare earth for detecting traces of CO{sub 2}: Operating in oxygen-free atmosphere

    SciTech Connect (OSTI)

    Xiong, Ya; Zhang, Guozhu; Zhang, Shunping; Zeng, Dawen; Xie, Changsheng, E-mail: csxie@mail.hust.edu.cn

    2014-04-01T23:59:59.000Z

    Highlights: • La, Gd, and Lu doped SnO{sub 2} with their sensing properties toward CO{sub 2} were compared. • The microstructures of SnO{sub 2}-based nanoparticles were elaborately characterized. • La-SnO{sub 2} thick film shows superior response toward trace ppm CO{sub 2}. • Our sensing material can be recommended to employ in oxygen-free environment. - Abstract: SnO{sub 2} thick films doped with atomic ratios ranging from 0 up to 8 at.% La, 8 at.% Gd, 8 at.% Lu were fabricated, respectively, via hydrothermal and impregnation methods. The crystal phase, morphology, and chemical composition of the SnO{sub 2}-based nanoparticles were characterized by XRD, FE-SEM, EDX, HRTEM and XPS. Sensing properties of La-SnO{sub 2}, Gd-SnO{sub 2}, Lu-SnO{sub 2} films, as well as the pure SnO{sub 2} film, were analyzed toward CO{sub 2} in the absence of O{sub 2}. It was found that the optimal doping element was La and the best doping ratio was 4 at.%. The maximum response appeared at an operating temperature of 250 °C, on which condition the 4 at.% La-SnO{sub 2} exhibited a remarkable improvement of response from 5.12 to 29.8 when increasing CO{sub 2} concentration from 50 to 500 ppm. Furthermore, the working mechanism underlying such enhancement in CO{sub 2}-sensing functions by La additive in the absence of O{sub 2} was proposed and discussed.

  11. Dye-sensitized solar cell employing zinc oxide aggregates grown in the presence of lithium

    DOE Patents [OSTI]

    Zhang, Qifeng; Cao, Guozhong

    2013-10-15T23:59:59.000Z

    Provided are a novel ZnO dye-sensitized solar cell and method of fabricating the same. In one embodiment, deliberately added lithium ions are used to mediate the growth of ZnO aggregates. The use of lithium provides ZnO aggregates that have advantageous microstructure, morphology, crystallinity, and operational characteristics. Employing lithium during aggregate synthesis results in a polydisperse collection of ZnO aggregates favorable for porosity and light scattering. The resulting nanocrystallites forming the aggregates have improved crystallinity and more favorable facets for dye molecule absorption. The lithium synthesis improves the surface stability of ZnO in acidic dyes. The procedures developed and disclosed herein also help ensure the formation of an aggregate film that has a high homogeneity of thickness, a high packing density, a high specific surface area, and good electrical contact between the film and the fluorine-doped tin oxide electrode and among the aggregate particles.

  12. Oxidative Tritium Decontamination System

    DOE Patents [OSTI]

    Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

    2006-02-07T23:59:59.000Z

    The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

  13. Controlled CO preferential oxidation

    DOE Patents [OSTI]

    Meltser, M.A.; Hoch, M.M.

    1997-06-10T23:59:59.000Z

    Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

  14. Khi i hc k thut thng tin (Undergraduateds School of IES) http://www.uec.ac.jp/ies/faculty/index.html (Jpns)

    E-Print Network [OSTI]

    Yanai, Keiji

    lng Lng t hc Vt liu hc Cht bán dn - Siêu bán dn Thit b in t - Thit b quang in t - T - Vt liu quang Thông tin quang Vt lý rn Sinh hc - Thn kinh hc H thng sinh hc o lng sinh hc Tên thng qun lý doanh nghip... nh hng ngh nghip: K s h thng, K s qun lý sn xut - cht lng sn phm, Chuyên

  15. Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films

    SciTech Connect (OSTI)

    Ehiasarian, A. P.; Vetushka, A. [Nanotechnology Centre for PVD Research, Materials and Engineering Institute, Sheffield Hallam University, Howard Street, Sheffield, S1 1WB (United Kingdom); Gonzalvo, Y. Aranda [Plasma and Surface Division, Hiden Analytical Ltd., 420 Europa Boulevard, Warrington, WA5 7UN (United Kingdom); Safran, G.; Szekely, L.; Barna, P. B. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest, P.O. Box 49 (Hungary)

    2011-05-15T23:59:59.000Z

    HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the deposition of high-quality thin films. The deposition flux contains a high degree of metal ionization and nitrogen dissociation. The microstructure of HIPIMS-deposited nitride films is denser compared to conventional sputter technologies. However, the mechanisms acting on the microstructure, texture and properties have not been discussed in detail so far. In this study, the growth of TiN by HIPIMS of Ti in mixed Ar and N{sub 2} atmosphere has been investigated. Varying degrees of metal ionization and nitrogen dissociation were produced by increasing the peak discharge current (I{sub d}) from 5 to 30 A. The average power was maintained constant by adjusting the frequency. Mass spectrometry measurements of the deposition flux revealed a high content of ionized film-forming species, such as Ti{sup 1+}, Ti{sup 2+} and atomic nitrogen N{sup 1+}. Ti{sup 1+} ions with energies up to 50 eV were detected during the pulse with reducing energy in the pulse-off times. Langmuir probe measurements showed that the peak plasma density during the pulse was 3 x 10{sup 16} m{sup -3}. Plasma density, and ion flux ratios of N{sup 1+}: N{sub 2}{sup 1+} and Ti{sup 1+}: Ti{sup 0} increased linearly with peak current. The ratios exceeded 1 at 30 A. TiN films deposited by HIPIMS were analyzed by X-ray diffraction, and transmission electron microscopy. At high I{sub d}, N{sup 1+}: N{sub 2}{sup 1+} > 1 and Ti{sup 1+}: Ti{sup 0} > 1 were produced; a strong 002 texture was present and column boundaries in the films were atomically tight. As I{sub d} reduced and N{sup 1+}: N{sub 2}{sup 1+} and Ti{sup 1+}: Ti{sup 0} dropped below 1, the film texture switched to strong 111 with a dense structure. At very low I{sub d}, porosity between columns developed. The effects of the significant activation of the deposition flux observed in the HIPIMS discharge on the film texture, microstructure, morphology and properties are discussed.

  16. ADVANCED OXIDATION PROCESS

    SciTech Connect (OSTI)

    Dr. Colin P. Horwitz; Dr. Terrence J. Collins

    2003-11-04T23:59:59.000Z

    The removal of recalcitrant sulfur species, dibenzothiophene and its derivatives, from automotive fuels is an integral component in the development of cleaner burning and more efficient automobile engines. Oxidative desulfurization (ODS) wherein the dibenzothiophene derivative is converted to its corresponding sulfoxide and sulfone is an attractive approach to sulfur removal because the oxidized species are easily extracted or precipitated and filtered from the hydrocarbon phase. Fe-TAML{reg_sign} activators of hydrogen peroxide (TAML is Tetra-Amido-Macrocyclic-Ligand) catalytically convert dibenzothiophene and its derivatives rapidly and effectively at moderate temperatures (50-60 C) and ambient pressure to the corresponding sulfoxides and sulfones. The oxidation process can be performed in both aqueous systems containing alcohols such as methanol, ethanol, or t-butanol, and in a two-phase hydrocarbon/aqueous system containing tert-butanol or acetonitrile. In the biphasic system, essentially complete conversion of the DBT to its oxidized products can be achieved using slightly longer reaction times than in homogeneous solution. Among the key features of the technology are the mild reaction conditions, the very high selectivity where no over oxidation of the sulfur compounds occurs, the near stoichiometric use of hydrogen peroxide, the apparent lack of degradation of sensitive fuel components, and the ease of separation of oxidized products.

  17. REDUCTION AND SEQUESTRATION OF PERTECHNETATE TO TECHNETIUM DIOXIDE AND PROTECTION FROM RE-OXIDATION

    SciTech Connect (OSTI)

    DUNCAN JB; JOHNSON JM; MOORE WP; HAGERTY KJ; RHODES RN; MOORE RC

    2012-07-11T23:59:59.000Z

    This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-I0S simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mobile +7 state under acidic or oxygenated conditions within the tested period of time (6 weeks). Previous work indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table 1 shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit.

  18. Bifacial solar cell with SnS absorber by vapor transport deposition

    SciTech Connect (OSTI)

    Wangperawong, Artit [Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Faculty of Engineering, King Mongkut's University of Technology Thonburi, Bangkok 10140 (Thailand); Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F., E-mail: sbent@stanford.edu [Stanford University, Stanford, California 94305 (United States)

    2014-10-27T23:59:59.000Z

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  19. Oxidation of propylene over copper oxide catalysts 

    E-Print Network [OSTI]

    Billingsley, David Stuart

    1958-01-01T23:59:59.000Z

    sulfate of either sodium, potassium, lithium, rubidium or cesium. The active agent was prepared in the form of a slurry which was deposited on the carrier by agitating the two materials together. The carrier was alumina or silicon carbide. Oxidation... welded on each end. On the bottom of the tank was a drain connection which was closed; the tank also contained a thermometer well. The tank was connected to the vent system through a needle valve and also through a safety valve which was set...

  20. Investigation of some new hydro(solvo)thermal synthesis routes to nanostructured mixed-metal oxides

    SciTech Connect (OSTI)

    Burnett, David L.; Harunsani, Mohammad H. [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Kashtiban, Reza J. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Playford, Helen Y. [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); ISIS Facility, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom); Sloan, Jeremy [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Hannon, Alex C. [ISIS Facility, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom); Walton, Richard I., E-mail: r.iwalton@warwick.ac.uk [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-06-01T23:59:59.000Z

    We present a study of two new solvothermal synthesis approaches to mixed-metal oxide materials and structural characterisation of the products formed. The solvothermal oxidation of metallic gallium by a diethanolamine solution of iron(II) chloride at 240 °C produces a crystalline sample of a spinel-structured material, made up of nano-scale particles typically 20 nm in dimension. XANES spectroscopy at the K-edge shows that the material contains predominantly Fe{sup 2+} in an octahedral environment, but that a small amount of Fe{sup 3+} is also present. Careful analysis using transmission electron microscopy and powder neutron diffraction shows that the sample is actually a mixture of two spinel materials: predominantly (>97%) an Fe{sup 2+} phase Ga{sub 1.8}Fe{sub 1.2}O{sub 3.9}, but with a minor impurity phase that is iron-rich. In contrast, the hydrothermal reaction of titanium bis(ammonium lactato)dihydroxide in water with increasing amounts of Sn(IV) acetate allows nanocrystalline samples of the SnO{sub 2}–TiO{sub 2} solid solution to be prepared directly, as proved by powder XRD and Raman spectroscopy. - Graphical abstract: New solvothermal synthesis approaches to spinel and rutile mixed-metal oxides are reported. - Highlights: • Solvothermal oxidation of gallium metal in organic iron(II) solution gives a novel iron gallate spinel. • Hydrothermal reaction of titanium(IV) complex and tin(IV) acetate produces the complete SnO{sub 2}–TiO{sub 2} solid solution. • Nanostructured mixed-metal oxide phases are produced directly from solution.

  1. Enhanced mercury oxidation

    SciTech Connect (OSTI)

    Gretta, W.J.; Wu, S.; Kikkawa, H. [Hitachi Power Systems America, Basting Ridge, NJ (United States)

    2009-06-15T23:59:59.000Z

    A new catalyst offers a new way to enhance mercury control from bituminous coal-fired power plants. Hitachi has developed an SCR catalyst which satisfies high Hg{sup 0} oxidation and low SO{sub 2} oxidation requirements under high temperatures (716 to 770 F). This triple action catalysts, TRAC can significantly enhance mercury oxidation and reduce or eliminate the need for additional mercury control measures such as activated carbon injection. After laboratory testing, pilot-scale tests confirmed an activity of 1.4-1.7 times higher than that of conventional SCR catalyst. The new catalyst has been successfully applied in a commercial PRB-fired boiler without the need for halogens to be added to the fuel feed or flue gas. 2 figs.

  2. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

    1999-01-01T23:59:59.000Z

    A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

  3. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

    2001-01-01T23:59:59.000Z

    A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

  4. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, S.; Kumar, R.; Krumpelt, M.

    1999-08-24T23:59:59.000Z

    A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

  5. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, S.; Kumar, R.; Krumpelt, M.

    1999-08-17T23:59:59.000Z

    A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

  6. Low temperature oxidation of plutonium

    SciTech Connect (OSTI)

    Nelson, Art J. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States); Roussel, Paul [AWE, Aldermaston, Reading, Berkshire, RG7 4PR (United Kingdom)

    2013-05-15T23:59:59.000Z

    The initial oxidation of gallium stabilized {delta}-plutonium metal at 193 K has been followed using x-ray photoelectron spectroscopy. On exposure to Langmuir quantities of oxygen, plutonium rapidly forms a trivalent oxide followed by a tetravalent plutonium oxide. The growth modes of both oxides have been determined. Warming the sample in vacuum, the tetravalent oxide reduces to the trivalent oxide. The kinetics of this reduction reaction have followed and the activation energy has been determined to be 38.8 kJ mol{sup -1}.

  7. Tetraalklylammonium polyoxoanionic oxidation catalysts

    DOE Patents [OSTI]

    Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

    1998-10-06T23:59:59.000Z

    Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

  8. Tetraalykylammonium polyoxoanionic oxidation catalysts

    DOE Patents [OSTI]

    Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

    1998-01-01T23:59:59.000Z

    Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z ›(n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

  9. Nanostructured transition metal oxides useful for water oxidation catalysis

    DOE Patents [OSTI]

    Frei, Heinz M; Jiao, Feng

    2013-12-24T23:59:59.000Z

    The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

  10. SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL

    E-Print Network [OSTI]

    Mease, Kenneth D.

    SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL CELLS Dynamic Simulation Approach Modular Approach: Individual simulation modules for each fuel cell type · Tubular SOFC · Planar SOFC · MCFC · PEM Reformer · Slow pressure transients #12;Fuel Cell Assumptions · H2 electrochemically oxidized only · CO consumed

  11. Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide

    E-Print Network [OSTI]

    Collins, Gary S.

    Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide Jessica Whalen, Oscar Marin Flores, Su University INTRODUCTION Energy consumption continues to skyrocket worldwide. Biodiesel is a renewable fuel as potential feedstock in solid oxide fuel cells. Petroleum based fuels become scarcer daily, and biodiesel

  12. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2013-04-16T23:59:59.000Z

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  13. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2012-09-11T23:59:59.000Z

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  14. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2014-05-20T23:59:59.000Z

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  15. Doped zinc oxide microspheres

    DOE Patents [OSTI]

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14T23:59:59.000Z

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  16. Highly oxidized superconductors

    DOE Patents [OSTI]

    Morris, Donald E. (Kensington, CA)

    1994-01-01T23:59:59.000Z

    Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed.

  17. Highly oxidized superconductors

    DOE Patents [OSTI]

    Morris, D.E.

    1994-09-20T23:59:59.000Z

    Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

  18. Optically transparent yttrium oxide

    SciTech Connect (OSTI)

    Hartnett, T.; Greenberg, M.; Gentilman, R.L.

    1988-08-02T23:59:59.000Z

    A body is described comprising at least 99.9% yttrium oxide having a density of at least 99% of theoretically density, a sample of the body having a in-line transmission of at least 73%, over a wavelength range of 2-5 microns with the sample having a thickness of 0.375 inches.

  19. Poly (p-phenyleneneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA); Barton, Thomas J. (Ames, IA); Vardeny, Zeev V. (Salt Lake City, UT)

    1994-10-04T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  20. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA)

    1994-08-02T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  1. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    SciTech Connect (OSTI)

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K. [Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF (United Kingdom); Taylor, A. A.; Mendis, B. G.; Bowen, L. [G. J. Russell Microscopy Facility, University of Durham, South Road, Durham DH1 3LE (United Kingdom)

    2014-02-03T23:59:59.000Z

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

  2. Influence of sputtering power on the optical properties of ITO thin films

    SciTech Connect (OSTI)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15T23:59:59.000Z

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  3. Poly (p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

    1994-10-04T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  4. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

    1994-08-02T23:59:59.000Z

    Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  5. Cyclic voltammetric study of Co-Ni-Fe alloys electrodeposition in sulfate medium

    SciTech Connect (OSTI)

    Hanafi, I.; Daud, A. R.; Radiman, S. [Material Science Program, School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor (Malaysia)

    2013-11-27T23:59:59.000Z

    Electrochemical technique has been used to study the electrodeposition of cobalt, nickel, iron and Co-Ni-Fe alloy on indium tin oxide (ITO) coated glass substrate. To obtain the nucleation mechanism, cyclic voltammetry is used to characterize the Co-Ni-Fe system. The scanning rate effect on the deposition process was investigated. Deposition of single metal occurs at potential values more positive than that estimated stability potential. Based on the cyclic voltammetry results, the electrodeposition of cobalt, nickel, iron and Co-Ni-Fe alloy clearly show that the process of diffusion occurs is controlled by the typical nucleation mechanism.

  6. Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films

    E-Print Network [OSTI]

    Luk, Ting S; Liu, Sheng; Keeler, Gordon A; Prasankumar, Rohit P; Vincenti, Maria A; Scalora, Michael; Sinclair, Michael B; Campione, Salvatore

    2015-01-01T23:59:59.000Z

    We experimentally demonstrate efficient third harmonic generation from an indium tin oxide (ITO) nanofilm (lambda/42 thick) on a glass substrate for a pump wavelength of 1.4 um. A conversion efficiency of 3.3x10^-6 is achieved by exploiting the field enhancement properties of the epsilon-near-zero (ENZ) mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

  7. REVIEW OF PLUTONIUM OXIDATION LITERATURE

    SciTech Connect (OSTI)

    Korinko, P.

    2009-11-12T23:59:59.000Z

    A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles (<15 {micro}m), moderately sized particles (15 < x < 250 {micro}m) and large particles (> 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

  8. Doped palladium containing oxidation catalysts

    DOE Patents [OSTI]

    Mohajeri, Nahid

    2014-02-18T23:59:59.000Z

    A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

  9. Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

    SciTech Connect (OSTI)

    Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Cho, Yong-Hoon, E-mail: yhc@kaist.ac.kr [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)] [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kwon, Soon-Yong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of) [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Jin Kim, Hee; Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Si Dang, Le [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)] [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2013-11-25T23:59:59.000Z

    Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

  10. Model catalytic oxidation studies using supported monometallic and heterobimetallic oxides

    SciTech Connect (OSTI)

    Ekerdt, J.G.

    1992-02-03T23:59:59.000Z

    This research program is directed toward a more fundamental understanding of the effects of catalyst composition and structure on the catalytic properties of metal oxides. Metal oxide catalysts play an important role in many reactions bearing on the chemical aspects of energy processes. Metal oxides are the catalysts for water-gas shift reactions, methanol and higher alcohol synthesis, isosynthesis, selective catalytic reduction of nitric oxides, and oxidation of hydrocarbons. A key limitation to developing insight into how oxides function in catalytic reactions is in not having precise information of the surface composition under reaction conditions. To address this problem we have prepared oxide systems that can be used to study cation-cation effects and the role of bridging (-O-) and/or terminal (=O) surface oxygen anion ligands in a systematic fashion. Since many oxide catalyst systems involve mixtures of oxides, we selected a model system that would permit us to examine the role of each cation separately and in pairwise combinations. Organometallic molybdenum and tungsten complexes were proposed for use, to prepare model systems consisting of isolated monomeric cations, isolated monometallic dimers and isolated bimetallic dimers supported on silica and alumina. The monometallic and bimetallic dimers were to be used as models of more complex mixed- oxide catalysts. Our current program was to develop the systems and use them in model oxidation reactions.

  11. Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures

    SciTech Connect (OSTI)

    Fakhri, M.; Goerrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-St. 21, 42119 Wuppertal (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt Braunschweig, Bundesallee 100, 38116 Braunschweig (Germany)

    2011-09-19T23:59:59.000Z

    Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organic light emitting diode displays.

  12. Graphene and Graphene Oxide: Biofunctionalization and Applications...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Graphene and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Abstract: Graphene...

  13. Model catalytic oxidation studies using supported monometallic and heterobimetallic oxides

    SciTech Connect (OSTI)

    Ekerdt, J.G.

    1991-04-30T23:59:59.000Z

    This research program is directed toward developing a fundamental understanding of how catalyst composition, redox ability, and structure control the catalytic properties of metal oxides. Oxide systems that permit examination of the role of metal oxide cations separately and in pairwise combinations are being developed. Organometallic complexes containing C{sub 3}-allyl, cyclopentadienyl, or carbonyl ligands are exchanged with the hydroxide ligands of silica, alumina, titania, zirconia and magnesia supports. The exchange technique is used to achieve high metal oxide loadings without the formation of supported crystallites over silica. The organometallic route may also lead to oxygen-bridged cations and/or cation pairs over the supports prior to full oxidation. The anchored complex is subsequently oxidized to generate a supported oxide. 2 refs., 1 tab.

  14. Preparation, characterization and applications of novel carbon and nitrogen codoped TiO{sub 2} nanoparticles from annealing TiN under CO atmosphere

    SciTech Connect (OSTI)

    Sun, Mingxuan; Song, Peng; Li, Jing; Cui, Xiaoli, E-mail: xiaolicui@fudan.edu.cn

    2013-10-15T23:59:59.000Z

    Graphical abstract: Carbon and nitrogen codoped TiO{sub 2} nanoparticles were firstly fabricated by calcining TiN powder under CO atmosphere at different temperatures between 400 and 600 °C, both the improved photocatalytic activity for degradation of methylene blue and enhanced photovoltaic performance for dye sensitized solar cells were demonstrated. - Highlights: • CN-codoped TiO{sub 2} nanoparticles were prepared by calcining TiN under CO atmosphere. • More visible light response was confirmed by UV–vis DRS and photocatalytic results. • Enhanced conversion efficiency was observed for the DSSCs from CN-TiO{sub 2} photoanode. • CN-codoping played an important role to improve the photocatalytic performance. - Abstract: Carbon and nitrogen codoped titania (CN-TiO{sub 2}) nanoparticles were fabricated by calcining titanium nitride (TiN) nanoparticles under carbon monoxide (CO) atmosphere at four different temperatures in a range of 400–600 °C. The as-prepared samples were characterized with X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscopy (XPS). Enhanced light absorption in both the UV and visible light region was observed for the resulted CN-TiO{sub 2} nanoparticles in ultraviolet-visible diffuse reflectance spectroscopy (UV–vis DRS). Improved photocatalytic activity toward the degradation of methylene blue by the CN-TiO{sub 2} nanoparticles was demonstrated under UV and visible light, respectively. The highest degradation rate was achieved for CN-TiO{sub 2} nanoparticles (13%) compared to N-TiO{sub 2} (10%) and the commercial P25 (5%) under visible light illumination for 40 min. Furthermore, the improved photocatalytic activity of CN-TiO{sub 2} was also confirmed by the degradation of colorless resorcinol under UV–vis light irradiation. Dye-sensitized solar cells (DSSCs) were fabricated using P25, N-TiO{sub 2} and CN-TiO{sub 2} photoanodes, respectively. The highest conversion efficiency of 3.31% was achieved by the DSSCs based on the CN-TiO{sub 2} photoanodes in comparison with the commercial P25 (1.61%) and N-TiO{sub 2} (2.44%) photoanodes. This work demonstrates that thermal treatment of TiN nanoparticles under CO atmosphere has shown to be a rapid, direct and clean approach to synthesize photocatalysts with enhanced photocatalytic and photovoltaic performance.

  15. Millisecond Oxidation of Alkanes

    Broader source: Energy.gov [DOE]

    This factsheet describes a project whose goal is to commercialize a production process for propylene and acrylic acid from propane using a catalytic auto-thermal oxydehydrogenation process operating at short contact times. Auto-thermal oxidation for conversion of propane to propylene and acrylic acid promises energy savings of 20 trillion Btu per year by 2020. In addition to reducing energy consumption, this technology can reduce manufacturing costs by up to 25 percent, and reduce a variety of greenhouse gas emissions.

  16. Nonisostructural complex oxide heteroepitaxy

    SciTech Connect (OSTI)

    Wong, Franklin J., E-mail: fwong@seas.harvard.edu; Ramanathan, Shriram [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

    2014-07-01T23:59:59.000Z

    The authors present an overview of the fundamentals and representative examples of the growth of epitaxial complex oxide thin films on structurally dissimilar substrates. The authors will delineate how the details of particular crystal structures and symmetry of different oxide surfaces can be employed for a rational approach to the synthesis of nonisostructural epitaxial heterostructures. The concept of oxygen eutaxy can be widely applied. Materials combinations will be split into three categories, and in all cases the films and substrates occur in different crystal structures: (1) common translational and rotational symmetry between the film and substrate planes; (2) translational symmetry mismatch between the substrates and films that is distinct from a simple mismatch in lattice parameters; and (3) rotational symmetry mismatch. In case (1), in principle single-crystalline thin films can be attained despite the films and substrates possessing different crystal structures. In case (2), antiphase boundaries will be prevalent in the thin films. In case (3), thin-film rotational variants that are joined by tilt boundaries will be present. Diffraction techniques to determine crystallographic alignment and epitaxial variants are discussed, and transmission electron microscopy studies to investigate extended defects in the thin films will also be reviewed. The authors end with open problems in this field regarding the structure of oxide interfaces that can be topics for future research.

  17. Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

    SciTech Connect (OSTI)

    Särhammar, Erik, E-mail: erik.sarhammar@angstrom.uu.se; Berg, Sören; Nyberg, Tomas [Department of Solid State Electronics, The Ångström Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

    2014-07-01T23:59:59.000Z

    This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition rate from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.

  18. Oxidative stress and oxidative damage in chemical carcinogenesis

    SciTech Connect (OSTI)

    Klaunig, James E., E-mail: jklauni@indiana.edu; Wang Zemin; Pu Xinzhu; Zhou Shaoyu

    2011-07-15T23:59:59.000Z

    Reactive oxygen species (ROS) are induced through a variety of endogenous and exogenous sources. Overwhelming of antioxidant and DNA repair mechanisms in the cell by ROS may result in oxidative stress and oxidative damage to the cell. This resulting oxidative stress can damage critical cellular macromolecules and/or modulate gene expression pathways. Cancer induction by chemical and physical agents involves a multi-step process. This process includes multiple molecular and cellular events to transform a normal cell to a malignant neoplastic cell. Oxidative damage resulting from ROS generation can participate in all stages of the cancer process. An association of ROS generation and human cancer induction has been shown. It appears that oxidative stress may both cause as well as modify the cancer process. Recently association between polymorphisms in oxidative DNA repair genes and antioxidant genes (single nucleotide polymorphisms) and human cancer susceptibility has been shown.

  19. Oxidation resistant alloys, method for producing oxidation resistant alloys

    DOE Patents [OSTI]

    Dunning, John S. (Corvallis, OR); Alman, David E. (Salem, OR)

    2002-11-05T23:59:59.000Z

    A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800.degree. C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800.degree. C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700.degree. C. at a low cost

  20. Oxidation resistant alloys, method for producing oxidation resistant alloys

    DOE Patents [OSTI]

    Dunning, John S.; Alman, David E.

    2002-11-05T23:59:59.000Z

    A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

  1. Zinc oxide varistors and/or resistors

    DOE Patents [OSTI]

    Arnold, Jr., Wesley D. (Oak Ridge, TN); Bond, Walter D. (Knoxville, TN); Lauf, Robert J. (Oak Ridge, TN)

    1993-01-01T23:59:59.000Z

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  2. Zinc oxide varistors and/or resistors

    DOE Patents [OSTI]

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27T23:59:59.000Z

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  3. ARM - Oxides of Nitrogen

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadap Documentation TDMADAP : XDCnarrowbandheat fluxChinaNews : AMFAlaskaNewsOxides of Nitrogen

  4. Large area ceramic thin films on plastics: A versatile route via solution processing

    SciTech Connect (OSTI)

    Kozuka, H.; Yamano, A.; Uchiyama, H.; Takahashi, M. [Faculty of Chemistry, Materials and Bioengineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680 (Japan); Fukui, T.; Yoki, M.; Akase, T. [Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680 (Japan)

    2012-01-01T23:59:59.000Z

    A new general route for large area, submicron thick ceramic thin films (crystalline metal oxide thin films) on plastic substrates is presented, where the crystallization of films is guaranteed by a firing process. Gel films are deposited on silicon substrates with a release layer and fired to be ceramic films, followed by transferring onto plastic substrates using adhesives. The ceramic films thus fabricated on plastics exhibit a certain degree of flexibility, implying the possibility of the technique to be applied to high-throughput roll-to-roll processes. Using this technique, we successfully realized transparent anatase thin films that provide high optical reflectance and transparent indium tin oxide thin films that exhibit electrical conductivity on polycarbonate and acrylic resin substrates, respectively. Crystallographically oriented zinc oxide films and patterned zinc oxide films are also demonstrated to be realized on acrylic resin substrates.

  5. Enhanced Thermal Conductivity Oxide Fuels

    SciTech Connect (OSTI)

    Alvin Solomon; Shripad Revankar; J. Kevin McCoy

    2006-01-17T23:59:59.000Z

    the purpose of this project was to investigate the feasibility of increasing the thermal conductivity of oxide fuels by adding small fractions of a high conductivity solid phase.

  6. Continuous lengths of oxide superconductors

    DOE Patents [OSTI]

    Kroeger, Donald M. (Knoxville, TN); List, III, Frederick A. (Andersonville, TN)

    2000-01-01T23:59:59.000Z

    A layered oxide superconductor prepared by depositing a superconductor precursor powder on a continuous length of a first substrate ribbon. A continuous length of a second substrate ribbon is overlaid on the first substrate ribbon. Sufficient pressure is applied to form a bound layered superconductor precursor powder between the first substrate ribbon and the second substrate ribbon. The layered superconductor precursor is then heat treated to establish the oxide superconducting phase. The layered oxide superconductor has a smooth interface between the substrate and the oxide superconductor.

  7. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01T23:59:59.000Z

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  8. Preparation of nitrogen doped TiO{sub 2} photocatalyst by oxidation of titanium nitride with H{sub 2}O{sub 2}

    SciTech Connect (OSTI)

    Zhou, Xiaosong [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou, Guangdong 510640 (China)] [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou, Guangdong 510640 (China); Peng, Feng, E-mail: cefpeng@scut.edu.cn [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou, Guangdong 510640 (China)] [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou, Guangdong 510640 (China); Wang, Hongjuan; Yu, Hao; Yang, Jian [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou, Guangdong 510640 (China)] [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou, Guangdong 510640 (China)

    2011-06-15T23:59:59.000Z

    Highlights: {yields} N-doped TiO{sub 2} are prepared by hydrothermally treating TiN with H{sub 2}O{sub 2}. {yields} The content of N in TiO{sub 2} can be controlled by the concentration of H{sub 2}O{sub 2}. {yields} The as-prepared N-TiO{sub 2} shows higher photocatalytic activity under visible light. -- Abstract: Nitrogen doped anatase TiO{sub 2} (N-TiO{sub 2}) were prepared by hydrothermally treating TiN with H{sub 2}O{sub 2}. The as-synthesized samples were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), UV-vis diffuse reflectance spectrum (DRS), Fourier transform infrared spectra (FT-IR) and X-ray photoelectron spectroscopy (XPS) techniques. The results confirmed that the hydrothermal oxidation is an effective method to prepare N-doped TiO{sub 2} anatase. The nitrogen concentration in TiO{sub 2} could be controlled by the concentration of H{sub 2}O{sub 2} solution. Photocatalytic degradation of methyl orange (MO) was carried out under visible light and UV-visible light irradiation, respectively. The as-prepared optimal N-TiO{sub 2} showed higher photocatalytic activity than N-P25 and P25, and exhibited excellent reusability.

  9. Operation of staged membrane oxidation reactor systems

    DOE Patents [OSTI]

    Repasky, John Michael

    2012-10-16T23:59:59.000Z

    A method of operating a multi-stage ion transport membrane oxidation system. The method comprises providing a multi-stage ion transport membrane oxidation system with at least a first membrane oxidation stage and a second membrane oxidation stage, operating the ion transport membrane oxidation system at operating conditions including a characteristic temperature of the first membrane oxidation stage and a characteristic temperature of the second membrane oxidation stage; and controlling the production capacity and/or the product quality by changing the characteristic temperature of the first membrane oxidation stage and/or changing the characteristic temperature of the second membrane oxidation stage.

  10. Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications

    E-Print Network [OSTI]

    Nicholas, Jason.D.

    2007-01-01T23:59:59.000Z

    Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.Tubular Solid Oxide Fuel Cell Technology, U.S. Department ofOxide Films for Solid Oxide Fuel Cell Applications by Jason

  11. Metal oxide films on metal

    DOE Patents [OSTI]

    Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

    1995-01-01T23:59:59.000Z

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  12. Detection of oxidation in human serum lipoproteins 

    E-Print Network [OSTI]

    Myers, Christine Lee

    2006-04-12T23:59:59.000Z

    A method for the oxidation of lipoproteins in vitro was developed using the free radical initiator, 2,2?-azobis-(2-amidinopropane) dihydrochloride (AAPH). Following in vitro oxidation, the susceptibility to oxidation of ...

  13. Spectroscopic Characterization of a Multiband Complex Oxide:...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a Multiband Complex Oxide: Insulating and Conducting Cement 12CaO·7AlO. Spectroscopic Characterization of a Multiband Complex Oxide: Insulating and Conducting Cement...

  14. New manganese catalyst for light alkane oxidation

    DOE Patents [OSTI]

    Durante, Vincent A. (West Chester, PA); Lyons, James E. (Wallingford, PA); Walker, Darrell W. (Visalia, CA); Marcus, Bonita K. (Radnor, PA)

    1994-01-01T23:59:59.000Z

    Aluminophosphates containing manganese in the structural framework are employed for the oxidation of alkanes, for example the vapor phase oxidation of methane to methanol.

  15. Precise Application of Transparent Conductive Oxide Coatings...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Application of Transparent Conductive Oxide Coatings for Flat Panel Displays and Photovoltaic Cells Technology available for licensing: New transparent conducting oxide (TCO)...

  16. Chapter 6: Thallium-Oxide Superconductors

    SciTech Connect (OSTI)

    Bhattacharya, R. N.

    2010-01-01T23:59:59.000Z

    This chapter has 2 sections titled: (1) Spray-Deposited, TI-Oxide Films, and (2) Electrodeposited Ti-Oxide Superconductors.

  17. Manganese Oxide Composite Electrodes for Lithium Batteries |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Manganese Oxide Composite Electrodes for Lithium Batteries Technology available for licensing: Improved spinel-containing "layered-layered" lithium metal oxide electrodes Materials...

  18. XPS Determination of Uranium Oxidations States. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    extent, are relatively insensitive to compositionstructure within the oxide-hydroxide-hydrate system and can be used to both identify and help quantify U oxidation states in mixed...

  19. Ethanol oxidation on metal oxide-supported platinum catalysts

    SciTech Connect (OSTI)

    L. M. Petkovic 090468; Sergey N. Rashkeev; D. M. Ginosar

    2009-09-01T23:59:59.000Z

    Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on the standard three-way catalysts, the conversion of unburned ethanol is low because both ethanol and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of “stoves” that burn ethanol molecules and their partially oxidized derivatives to the “final” products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of “stoves” that burn ethanol molecules and their partially oxidized derivatives to the “final” products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.

  20. Crystallographic parameters and electro-optical constants in ITO thin films

    SciTech Connect (OSTI)

    Torkaman, N.M. [Dept. of Science, Karaj branch, Islamic Azad University, P.O. Box 31485-313, Karaj (Iran, Islamic Republic of); Ganjkhanlou, Y.; Kazemzad, M. [Materials and Energy Research Center (MERC), P.O. Box 14155-4777, Tehran (Iran, Islamic Republic of); Dabaghi, H.H., E-mail: hm_hadad@yahoo.com [Dept. of Science, Karaj branch, Islamic Azad University, P.O. Box 31485-313, Karaj (Iran, Islamic Republic of); Keyanpour-Rad, M. [Materials and Energy Research Center (MERC), P.O. Box 14155-4777, Tehran (Iran, Islamic Republic of)

    2010-03-15T23:59:59.000Z

    Indium tin oxide thin films were deposited onto soda lime glass substrates using an e-beam evaporation system. In order to improve the structural, electrical and optical properties, the films were annealed at 450 deg. C and 500 deg. C in vacuum for 1 h. X-ray diffractions of samples were analyzed by Rietveld refinement and Warren-Averbach methods. By application of Levenberg-Marquardt least square method, the experimental transmittance data were fitted completely with the transmittance data calculated via a combination of modified Drude and Forouhi-Bloomer models. Focusing on the results, it was shown that the samples had a nanosize crystallite and enhancement of the annealing temperature resulted in an increase in the conductivity, carrier concentration, lattice parameter, crystallite size and micro-strain. However, it was found that the defects were preferentially accumulated along grain boundaries in sample annealed at lower temperature. Moreover, the finding revealed that conductivity of the samples was dominated by intra-grain in indium tin oxide films. Furthermore, increasing annealing temperature resulted in the orientation in < 111> crystal texture and also brought in an additional Burstein-Moss shift.

  1. Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O

    SciTech Connect (OSTI)

    Austin, Dustin Z., E-mail: austind@eecs.oregonstate.edu; Conley, John F., E-mail: jconley@eecs.oregonstate.edu [Department of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331 (United States); Allman, Derryl; Price, David; Hose, Sallie [ON Semiconductor, Technology Development, Gresham, Oregon 97030 (United States); Saly, Mark [SAFC Hitech, Haverhill, Massachusetts 01832 (United States)

    2014-01-15T23:59:59.000Z

    Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O at deposition temperatures between 90 and 270?°C on Si{sub 3}N{sub 4}, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi{sub 2}O{sub 3} films deposited at 150?°C have a linear growth per cycle of 0.039?nm/cycle, density of 8.3?g/cm{sup 3}, band gap of approximately 2.9?eV, low carbon content, and show the ? phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210?°C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.

  2. Zinc Doping in Cosubstituted In2-2xSnxZnxO3-A. Ambrosini, S. Malo, and K. R. Poeppelmeier*

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    applications such as solar cells and flat panel and liquid crystal displays. Sn-doped indium oxide (ITO

  3. Investigation of Mixed Oxide Catalysts for NO Oxidation

    SciTech Connect (OSTI)

    Szanyi, Janos; Karim, Ayman M.; Pederson, Larry R.; Kwak, Ja Hun; Mei, Donghai; Tran, Diana N.; Herling, Darrell R.; Muntean, George G.; Peden, Charles HF; Howden, Ken; Qi, Gongshin; Li, Wei

    2014-12-09T23:59:59.000Z

    The oxidation of engine-generated NO to NO2 is an important step in the reduction of NOx in lean engine exhaust because NO2 is required for the performance of the LNT technology [2], and it enhances the activities of ammonia selective catalytic reduction (SCR) catalysts [1]. In particular, for SCR catalysts an NO:NO2 ratio of 1:1 is most effective for NOx reduction, whereas for LNT catalysts, NO must be oxidized to NO2 before adsorption on the storage components. However, NO2 typically constitutes less than 10% of NOx in lean exhaust, so catalytic oxidation of NO is essential. Platinum has been found to be especially active for NO oxidation, and is widely used in DOC and LNT catalysts. However, because of the high cost and poor thermal durability of Pt-based catalysts, there is substantial interest in the development of alternatives. The objective of this project, in collaboration with partner General Motors, is to develop mixed metal oxide catalysts for NO oxidation, enabling lower precious metal usage in emission control systems. [1] M. Koebel, G. Madia, and M. Elsener, Catalysis Today 73, 239 (2002). [2] C. H. Kim, G. S. Qi, K. Dahlberg, and W. Li, Science 327, 1624 (2010).

  4. Compositional Tuning of Ultrathin Surface Oxides on Metal and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that the native oxide on 5%Ni-Al alloy is primarily composed of aluminum oxide with no nickel oxide whereas the photon-assisted oxide comprises of both aluminum oxide and nickel...

  5. Oxides having high energy densities

    DOE Patents [OSTI]

    Ceder, Gerbrand; Kang, Kisuk

    2013-09-10T23:59:59.000Z

    Certain disclosed embodiments generally relate to oxide materials having relatively high energy and/or power densities. Various aspects of the embodiments are directed to oxide materials having a structure B.sub.i(M.sub.jY.sub.k)O.sub.2, for example, a structure Li.sub.j(Ni.sub.jY.sub.k)O.sub.2 such as Li(Ni.sub.0.5Mn.sub.0.5)O.sub.2. In this structure, Y represents one or more atoms, each independently selected from the group consisting of alkaline earth metals, transition metals, Group 14 elements, Group 15, or Group 16 elements. In some embodiments, such an oxide material may have an O3 crystal structure, and/or a layered structure such that the oxide comprises a plurality of first, repeating atomic planes comprising Li, and a plurality of second, repeating atomic planes comprising Ni and/or Y.

  6. Thermal oxidation procedure PREPARATION........................................................................................................................................... 2

    E-Print Network [OSTI]

    Hochberg, Michael

    procedure - 2 - Preparation. The preparation procedure sets up the power, gas supplies, cooling water, (DI to check all the supplies. Cooling water Gas supplies Routing DI water for wet oxidation We start........................................................................................................................................... 2 Step 1 Turn on the cooling water

  7. Development of a cost effective surface-patterned transparent conductive coating as top-contact of light emitting diodes

    SciTech Connect (OSTI)

    Haldar, Arpita [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India); Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bera, Susanta; Jana, Sunirmal, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bhattacharya, Kallol; Chakraborty, Rajib, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India)

    2014-05-21T23:59:59.000Z

    Sol-gel process has been used to form indium zinc oxide films using an optimized combination of zinc to indium concentration in the precursor solutions. Different structures, like one (1D) and two-dimensional (2D) gratings and diffractive optical elements (DOEs) in the form of Fresnel lens are fabricated on the film surface of proposed top metal contact of LED by imprint soft lithography technique. These structures can enhance the LED's light extraction efficiency (LEE) or can shape the output beam pattern, respectively. Several characterizations are done to analyze the material and structural properties of the films. The presence of 1D and 2D gratings as well as DOEs is confirmed from field emission scanning electron and atomic force microscopes analyses. Although, X-ray diffraction shows amorphous nature of the film, but transmission electron microscopy study shows that it is nano crystalline in nature having fine particles (?8?nm) of hexagonal ZnO. Shrinkage behaviour of gratings as a function of curing temperature is explained by Fourier transform infra-red spectra and thermo gravimetric-differential thermal analysis. The visible transmission and sheet resistance of the sample are found comparable to tin doped indium oxide (ITO). Therefore, the film can compete as low cost substitute of ITO as top metal contact of LEDs.

  8. The catalytic oxidation of propane 

    E-Print Network [OSTI]

    Sanderson, Charles Frederick

    1949-01-01T23:59:59.000Z

    THE CATALYTIC OXIDATION OP PROPANE A Thesis By Charles Frederick Sandersont * * June 1949 Approval as to style and content recommended: Head of the Department of Chemical Engineering THE CATALYTICi OXIDATTON OF PROPANE A Thesis By Charles... Frederick ;Sandersonit * June 1949 THE CATALYTIC OXIDATION OP PROPANE A Thesis Submitted to the Faculty of the Agricultural and Mechanical College of Texas in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Major...

  9. The catalytic oxidation of propane

    E-Print Network [OSTI]

    Sanderson, Charles Frederick

    1949-01-01T23:59:59.000Z

    THE CATALYTIC OXIDATION OP PROPANE A Thesis By Charles Frederick Sandersont * * June 1949 Approval as to style and content recommended: Head of the Department of Chemical Engineering THE CATALYTICi OXIDATTON OF PROPANE A Thesis By Charles... Frederick ;Sandersonit * June 1949 THE CATALYTIC OXIDATION OP PROPANE A Thesis Submitted to the Faculty of the Agricultural and Mechanical College of Texas in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Major...

  10. Metal oxide nanostructures with hierarchical morphology

    DOE Patents [OSTI]

    Ren, Zhifeng (Newton, MA); Lao, Jing Yu (Saline, MI); Banerjee, Debasish (Ann Arbor, MI)

    2007-11-13T23:59:59.000Z

    The present invention relates generally to metal oxide materials with varied symmetrical nanostructure morphologies. In particular, the present invention provides metal oxide materials comprising one or more metallic oxides with three-dimensionally ordered nanostructural morphologies, including hierarchical morphologies. The present invention also provides methods for producing such metal oxide materials.

  11. Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application

    E-Print Network [OSTI]

    Boyer, Edmond

    for the physicochemical characterization in order to study the junction interface and determine the oxide thickness reflectance. Electrical characteristics of the structures with different oxide thicknesses and an evaporated insulating materials with a higher dielectric constant.1 These materials shall lead to a high capacitance

  12. In situ reduction and oxidation of nickel from solid oxide fuel cells in a Titan ETEM

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    In situ reduction and oxidation of nickel from solid oxide fuel cells in a Titan ETEM A. Faes1, Denmark antonin.faes@epfl.ch Keywords: In situ ETEM, nickel oxide, reduction, RedOx, SOFC Solid Oxide Fuel. C. Singhal, K. Kendall, High Temperature Solid Oxide Fuel Cell - Fundamentals, Design

  13. Millisecond Oxidation of Alkanes

    SciTech Connect (OSTI)

    Scott Han

    2011-09-30T23:59:59.000Z

    This project was undertaken in response to the Department of Energy's call to research and develop technologies 'that will reduce energy consumption, enhance economic competitiveness, and reduce environmental impacts of the domestic chemical industry.' The current technology at the time for producing 140 billion pounds per year of propylene from naphtha and Liquified Petroleum Gas (LPG) relied on energy- and capital-intensive steam crackers and Fluidized Catalytic Cracking (FCC) units. The propylene is isolated from the product stream in a costly separation step and subsequently converted to acrylic acid and other derivatives in separate production facilities. This project proposed a Short Contact Time Reactor (SCTR)-based catalytic oxydehydrogenation process that could convert propane to propylene and acrylic acid in a cost-effective and energy-efficient fashion. Full implementation of this technology could lead to sizeable energy, economic and environmental benefits for the U. S. chemical industry by providing up to 45 trillion BTUs/year, cost savings of $1.8 billion/year and a combined 35 million pounds/year reduction in environmental pollutants such as COx, NOx, and SOx. Midway through the project term, the program directive changed, which approval from the DOE and its review panel, from direct propane oxidation to acrylic acid at millisecond contact times to a two-step process for making acrylic acid from propane. The first step was the primary focus, namely the conversion of propane to propylene in high yields assisted by the presence of CO2. The product stream from step one was then to be fed directly into a commercially practiced propylene-to-acrylic acid tandem reactor system.

  14. Transparent conducting oxides and production thereof

    SciTech Connect (OSTI)

    Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

    2014-06-10T23:59:59.000Z

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  15. Transparent conducting oxides and production thereof

    SciTech Connect (OSTI)

    Gessert, Timothy A; Yoshida, Yuki; Coutts, Timothy J

    2014-05-27T23:59:59.000Z

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  16. Indium flux-growth of Eu{sub 2}AuGe{sub 3} : a new germanide with an AlB{sub 2} superstructure.

    SciTech Connect (OSTI)

    Sebastian, C. P.; Malliakas, C. D.; Chondroudi, M.; Schellenberg, I.; Rayaprol, S.; Hoffmann, R.-D.; Pottgen, R.; Kanatzidis, M. G. (Materials Science Division); (Northwestern Univ.); (Westfalische Wilhelms-Univ. Munster); (UGC-DAE Consortium for Scientific Research)

    2010-01-01T23:59:59.000Z

    The germanide Eu{sub 2}AuGe{sub 3} was obtained as large single crystals in high yield from a reaction of the elements in liquid indium. At room temperature Eu{sub 2}AuGe{sub 3} crystallizes with the Ca{sub 2}AgSi{sub 3} type, space group Fmmm, an ordered variant of the AlB{sub 2} type: a = 857.7(4), b = 1485.5(10), c = 900.2(4) pm. The gold and germanium atoms build up slightly distorted graphite-like layers which consist of Ge{sub 6} and Au{sub 2}Ge{sub 4} hexagons, leading to two different hexagonal-prismatic coordination environments for the europium atoms. Magnetic susceptibility data showed Curie?Weiss law behavior above 50 K and antiferromagnetic ordering at 11 K. The experimentally measured magnetic moment indicates divalent europium. The compound exhibits a distinct magnetic anisotropy based on single crystal measurements and at 5 K it shows a metamagnetic transition at 10 kOe. Electrical conductivity measurements show metallic behavior. The structural transition at 130 K observed in the single crystal data was very well supported by the conductivity measurements. {sup 151}Eu Moessbauer spectroscopic data show an isomer shift of ?11.24 mm/s at 77 K, supporting the divalent character of europium. In the magnetically ordered regime one observes superposition of two signals with hyperfine fields of 26.0 (89%) and 3.5 (11%) T, respectively, indicating differently ordered domains.

  17. Ductility Enhancement of Molybdenum Phase by Nano-sizedd Oxide Dispersions

    SciTech Connect (OSTI)

    Bruce Kang

    2008-07-31T23:59:59.000Z

    The present research is focused on ductility enhancement of molybdenum (Mo) alloys by adding nano-sized oxide particles to the alloy system. The research approach includes: (1) determination of microscopic mechanisms responsible for the macroscopic ductility enhancement effects through atomistic modeling of the metal-ceramic interface; (2) subsequent computer simulation-aided optimization of composition and nanoparticle size of the dispersion for improved performance; (3) synthesis and characterization of nanoparticle dispersion following the guidance from atomistic computational modeling analyses (e.g., by processing a small sample of Mo alloy for evaluation); and (4) experimental testing of the mechanical properties to determine optimal ductility enhancement.Through atomistic modeling and electronic structure analysis using full-potential linearized muffin-tin orbital (FP-LMTO) techniques, research to date has been performed on a number of selected chromium (Cr) systems containing nitrogen (N) and/or magnesium oxide (MgO) impurities. The emphasis has been on determining the properties of the valence electrons and the characteristics of the chemical bonds they formed. It was found that the brittle/ductile behavior of this transitional metal system is controlled by the relative population of valence charges: bonds formed by s valence electrons yield metallic, ductile behavior, whereas bonds formed by d valence electrons lead to covalent, brittle behavior. The presence of valence bands from impurities also affects the metal bonding, thereby explaining the detrimental and beneficial effects induced by the inclusion of N impurities and MgO dispersions. These understandings are useful for optimizing ductility enhancement effects on the dispersion materials.

  18. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    E-Print Network [OSTI]

    Kronawitter, Coleman

    2012-01-01T23:59:59.000Z

    lower oxides of titanium, 25 this energy gap, as defined inlies at greater energies than reference titanium oxides. Thetitanium oxides have been comprehensively documented. 25,26,27,28 The two sets of local maxima over this energy

  19. Solid oxide electrochemical reactor science.

    SciTech Connect (OSTI)

    Sullivan, Neal P. (Colorado School of Mines, Golden, CO); Stechel, Ellen Beth; Moyer, Connor J. (Colorado School of Mines, Golden, CO); Ambrosini, Andrea; Key, Robert J. (Colorado School of Mines, Golden, CO)

    2010-09-01T23:59:59.000Z

    Solid-oxide electrochemical cells are an exciting new technology. Development of solid-oxide cells (SOCs) has advanced considerable in recent years and continues to progress rapidly. This thesis studies several aspects of SOCs and contributes useful information to their continued development. This LDRD involved a collaboration between Sandia and the Colorado School of Mines (CSM) ins solid-oxide electrochemical reactors targeted at solid oxide electrolyzer cells (SOEC), which are the reverse of solid-oxide fuel cells (SOFC). SOECs complement Sandia's efforts in thermochemical production of alternative fuels. An SOEC technology would co-electrolyze carbon dioxide (CO{sub 2}) with steam at temperatures around 800 C to form synthesis gas (H{sub 2} and CO), which forms the building blocks for a petrochemical substitutes that can be used to power vehicles or in distributed energy platforms. The effort described here concentrates on research concerning catalytic chemistry, charge-transfer chemistry, and optimal cell-architecture. technical scope included computational modeling, materials development, and experimental evaluation. The project engaged the Colorado Fuel Cell Center at CSM through the support of a graduate student (Connor Moyer) at CSM and his advisors (Profs. Robert Kee and Neal Sullivan) in collaboration with Sandia.

  20. Method for hot pressing beryllium oxide articles

    DOE Patents [OSTI]

    Ballard, Ambrose H. (Oak Ridge, TN); Godfrey, Jr., Thomas G. (Oak Ridge, TN); Mowery, Erb H. (Clinton, TN)

    1988-01-01T23:59:59.000Z

    The hot pressing of beryllium oxide powder into high density compacts with little or no density gradients is achieved by employing a homogeneous blend of beryllium oxide powder with a lithium oxide sintering agent. The lithium oxide sintering agent is uniformly dispersed throughout the beryllium oxide powder by mixing lithium hydroxide in an aqueous solution with beryllium oxide powder. The lithium hydroxide is converted in situ to lithium carbonate by contacting or flooding the beryllium oxide-lithium hydroxide blend with a stream of carbon dioxide. The lithium carbonate is converted to lithium oxide while remaining fixed to the beryllium oxide particles during the hot pressing step to assure uniform density throughout the compact.