National Library of Energy BETA

Sample records for indium tin oxide

  1. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    SciTech Connect (OSTI)

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). These ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.

  2. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). Thesemore » ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.« less

  3. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect (OSTI)

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro; PRESTO, Japan Science and Technology Agency , Honcho Kawaguchi, 3320012 Saitama

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  4. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

    SciTech Connect (OSTI)

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-13

    We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

  5. Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

    SciTech Connect (OSTI)

    Yang, Chan-Shan; Tang, Tsung-Ta; Pan, Ru-Pin; Yu, Peichen; Pan, Ci-Ling

    2014-04-07

    Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding ?/2 at 1.0 THz was achieved in a ?517??m-thick cell. The phase shifter exhibits high transmittance (?78%). The driving voltage required for quarter-wave operation is as low as 5.66?V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

  6. Defect structure of indium tin oxide and its relationship to conductivity

    SciTech Connect (OSTI)

    Gonzalez, G. B.; Cohen, J. B.; Hwang, J.-H.; Mason, T. O.; Hodges, J. P.; Jorgensen, J. D.

    2000-05-09

    Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Although indium tin oxide (ITO) is the most frequently used commercial TCO, its defect structure is still uncertain. Previously, its defect chemistry has been inferred based on the conductivity of the material. To directly study the defect structure of ITO, the authors prepared powders under different processing environments and performed neutron powder diffraction. Structural information was obtained by performing Rietveld analysis. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the defect oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites, showing a strong preference for the b site. These structural results are correlated with the measured electrical properties of the same samples.

  7. Using indium tin oxide material to implement the imaging of microwave plasma ignition process

    SciTech Connect (OSTI)

    Wang, Qiang; Hou, Lingyun; Zhang, Guixin Zhang, Boya; Liu, Cheng; Wang, Zhi; Huang, Jian

    2014-02-17

    In this paper, a method is introduced to get global observation of microwave plasma ignition process at high pressure. A microwave resonator was designed with an indium tin oxide coated glass at bottom. Microwave plasma ignition was implemented in methane and air mixture at 10 bars by a 2?ms-3?kW-2.45?GHz microwave pulse, and the high speed images of the ignition process were obtained. The images visually proved that microwave plasma ignition could lead to a multi-point ignition. The system may also be applied to obtain Schlieren images, which is commonly used to observe the development of flame kernel in an ignition process.

  8. Highly efficient inverted organic solar cells using amino acid modified indium tin oxide as cathode

    SciTech Connect (OSTI)

    Li, Aiyuan; Nie, Riming; Deng, Xianyu; Wei, Huaixin; Li, Yanqing; Tang, Jianxin; Zheng, Shizhao; Wong, King-Young

    2014-03-24

    In this paper, we report that highly efficient inverted organic solar cells were achieved by modifying the surface of indium tin oxide (ITO) using an amino acid, Serine (Ser). With the modification of the ITO surface, device efficiency was significantly enhanced from 0.63% to 4.17%, accompanied with an open circuit voltage (Voc) that was enhanced from 0.30?V to 0.55?V. Ultraviolet and X-ray photoelectron spectroscopy studies indicate that the work function reduction induced by the amino acid modification resulting in the decreased barrier height at the ITO/organic interface played a crucial role in the enhanced performances.

  9. Phosphonic Acid Functionalized Asymmetric Phthalocyanines: Synthesis, Modification of Indium Tin Oxide (ITO), and Charge Transfer

    SciTech Connect (OSTI)

    Polaske, Nathan W.; Lin, Hsiao-Chu; Tang, Anna; Mayukh, Mayank; Oquendo, Luis E.; Green, John; Ratcliff, Erin L.; Armstrong, Neal R.; Saavedra, S. Scott; McGrath, Dominic V.

    2011-12-20

    Metalated and free-base A?B-type asymmetric phthalocyanines (Pcs) bearing, in the asymmetric quadrant, a flexible alkyl linker of varying chain lengths terminating in a phosphonic acid (PA) group have been synthesized. Two parallel series of asymmetric Pc derivatives bearing aryloxy and arylthio substituents are reported, and their synthesis and characterization through NMR, combustion analysis, and MALDI-MS are described. We also demonstrate the modification of indium tin oxide (ITO) substrates using the PA functionalized asymmetric Pc derivatives and monitoring their electrochemistry. The PA functionalized asymmetric Pcs were anchored to the ITO surface through chemisorption and their electrochemical properties characterized using cyclic voltammetry to investigate the effects of PA structure on the thermodynamics and kinetics of charge transfer. Ionization energies of the modified ITO surfaces were measured using ultraviolet photoemission spectroscopy.

  10. Indium tin oxide nanowires as hyperbolic metamaterials for near-field radiative heat transfer

    SciTech Connect (OSTI)

    Chang, Jui-Yung; Basu, Soumyadipta Wang, Liping

    2015-02-07

    We investigate near-field radiative heat transfer between Indium Tin Oxide (ITO) nanowire arrays which behave as type 1 and 2 hyperbolic metamaterials. Using spatial dispersion dependent effective medium theory to model the dielectric function of the nanowires, the impact of filling fraction on the heat transfer is analyzed. Depending on the filling fraction, it is possible to achieve both types of hyperbolic modes. At 150?nm vacuum gap, the heat transfer between the nanowires with 0.5 filling fraction can be 11 times higher than that between two bulk ITOs. For vacuum gaps less than 150?nm the heat transfer increases as the filling fraction decreases. Results obtained from this study will facilitate applications of ITO nanowires as hyperbolic metamaterials for energy systems.

  11. Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics

    SciTech Connect (OSTI)

    Doggart, P.; Bristow, N.; Kettle, J.

    2014-09-14

    The influence of indium tin oxide [(In{sub 2}O{sub 3}:Sn), ITO] material properties on the output performance of organic photovoltaic (OPV) devices has been modelled and investigated. In particular, the effect of altering carrier concentration (n), thickness (t), and mobility (?{sub e}) in ITO films and their impact on the optical performance, parasitic resistances and overall efficiency in OPVs was studied. This enables optimal values of these parameters to be calculated for solar cells made with P3HT:PC{sub 61}BM and PCPDTBT:PC{sub 71}BM active layers. The optimal values of n, t and ?{sub e} are not constant between different OPV active layers and depend on the absorption spectrum of the underlying active layer material system. Consequently, design rules for these optimal values as a function of donor bandgap in bulk-heterojunction active layers have been formulated.

  12. Ferromagnetism of manganese-doped indium tin oxide films deposited on polyethylene naphthalate substrates

    SciTech Connect (OSTI)

    Nakamura, Toshihiro; Isozaki, Shinichi; Tanabe, Kohei; Tachibana, Kunihide

    2009-04-01

    Mn-doped indium tin oxide (ITO) films were deposited on polyethylene naphthalate (PEN) substrates using radio-frequency magnetron sputtering. The magnetic, electrical, and optical properties of the films deposited on PEN substrates were investigated by comparing with the properties of films grown on glass substrates at the same growth conditions. Thin films on PEN substrates exhibited low electrical resistivity of the order of 10{sup -4} {omega} cm and high optical transmittance between 75% and 90% in the visible region. Ferromagnetic hysteresis loops were observed at room temperature for the samples grown on PEN substrates. Mn-doped ITO films can be one of the most promising candidates of transparent ferromagnetic materials for flexible spintronic devices.

  13. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki; Noh, Yong-Jin; Na, Seok-In

    2014-09-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10{sup −5} Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10{sup −3} Ω{sup −1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

  14. Low Temperature, Self-nucleated Growth of Indium Tin Oxide Nanostructures by Pulsed Laser Deposition in Argon

    SciTech Connect (OSTI)

    Tan, S. S.; Lee, W. K.; Kee, Y. Y.; Wong, H. Y.; Tou, T. Y.

    2011-03-30

    Indium tin oxide (ITO) nanostructures were successfully deposited on glass substrate by pulsed laser ablation in argon gas at 250 deg. C. Microstructural changes were observed in the argon gas pressure between 30 to 50 mTorr. The as-grown, nanostructured ITO exhibit In{sub 2}O{sub 3} bixbyite structure orientated at <111> direction. At the initial stage of growth, there was a large number of nucleation sites detected which eventually evolved into needle-like branches. The presence of spheres at the tip of these branches indicates that these nanostructured ITO were likely governed by vapor-liquid-solid (VLS) growth mechanism.

  15. Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes

    SciTech Connect (OSTI)

    Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2014-01-27

    We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup ?} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2?eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91?cd/A, 102?lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

  16. Large-scale patterning of indium tin oxide electrodes for guided mode extraction from organic light-emitting diodes

    SciTech Connect (OSTI)

    Geyer, Ulf; Hauss, Julian; Riedel, Boris; Gleiss, Sebastian; Lemmer, Uli; Gerken, Martina

    2008-11-01

    We describe a cost-efficient and large area scalable production process of organic light-emitting diodes (OLEDs) with photonic crystals (PCs) as extraction elements for guided modes. Using laser interference lithography and physical plasma etching, we texture the indium tin oxide (ITO) electrode layer of an OLED with one- and two-dimensional PC gratings. By optical transmission measurements, the resonant mode of the grating is shown to have a drift of only 0.4% over the 5 mm length of the ITO grating. By changing the lattice constant between 300 and 600 nm, the OLED emission angle of enhanced light outcoupling is tailored from -24.25 deg. to 37 deg. At these angles, the TE emission is enhanced up to a factor of 2.14.

  17. Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

    SciTech Connect (OSTI)

    Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Bong Kyu; Ahn, Chang-Geun; Kim, Sang-Hyeob [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of); Choi, Chel-Jong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-07-21

    We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter?

  18. Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

    SciTech Connect (OSTI)

    Wang Haifeng; Huang Zhimeng; Zhang Dayong; Luo Fei; Huang Lixian; Li Yanglong; Luo Yongquan; Wang Weiping; Zhao Xiangjie

    2011-12-01

    Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

  19. Quantification and impact of nonparabolicity of the conduction band of indium tin oxide on its plasmonic properties

    SciTech Connect (OSTI)

    Liu, Xiaoge; Park, Junghyun; Kang, Ju-Hyung; Yuan, Hongtao; Cui, Yi; Hwang, Harold Y.; Brongersma, Mark L.

    2014-11-03

    Doped indium tin oxide (ITO) behaves as a Drude metal with a plasma frequency that is controlled by its free carrier density. In this work, we systematically tune this frequency across the mid-infrared range by annealing treatments in a reducing environment that produce high electron concentrations (∼10{sup 21 }cm{sup −3}). The changes in ITO's optical properties that result from the changes in carrier density are measured by attenuated total reflection measurements. These optical frequency measurements are complemented by Hall measurements to obtain a comprehensive picture of the Drude response of the ITO films. It was found that a complete description of the optical properties at very high carrier densities needs to account for the nonparabolicity of the conduction band of ITO and a reduced carrier mobility. More specifically, an increase in carrier concentration from 6.2 × 10{sup 19 }cm{sup −3} to 1.4 × 10{sup 21 }cm{sup −3} comes with a change of the effective electron mass from 0.35 m{sub 0} to 0.53 m{sub 0} and a decrease in the optical frequency mobility from about 20 cm{sup 2} V{sup −1} s{sup −1} to 9 cm{sup 2} V{sup −1} s{sup −1}.

  20. Hydrogen Sensor Based on Yttria-Stabilized Zirconia Electrolyte and Tin-Doped Indium Oxide Sensing Electrode

    SciTech Connect (OSTI)

    Martin, L P; Glass, R S

    2004-03-26

    A solid state electrochemical sensor has been developed for hydrogen leak detection in ambient air. The sensor uses an yttria-stabilized electrolyte with a tin-doped indium oxide sensing electrode and a Pt reference electrode. Excellent sensitivity, and response time of one second or less, are reported for hydrogen gas over the concentration range of 0.03 to 5.5% in air. Cross-sensitivity to relative humidity and to CO{sub 2} are shown to be low. The response to methane, a potentially significant source of interference for such a sensor, is significantly less than that for hydrogen. The sensor shows good reproducibility and was unaffected by thermal cycling over the course of this investigation. The effects of sensing electrode thickness and thermal aging are also reported, and the sensing mechanism is discussed. The sensor is intended for use in vehicles powered by hydrogen fuel cells and hydrogen internal combustion engines. Those vehicles will use and/or store significant quantities of hydrogen, and will require safety sensor for monitoring potential hydrogen leakage in order to ensure passenger safety.

  1. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup }1{sup }) GaN substrates

    SciTech Connect (OSTI)

    Pourhashemi, A. Farrell, R. M.; Cohen, D. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup }1{sup }) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451?nm at room temperature, an output power of 2.52?W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34?A. The measured differential quantum efficiency was 50%.

  2. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    SciTech Connect (OSTI)

    Jung, Mi E-mail: Dockha@kist.re.kr; Mo Yoon, Dang; Kim, Miyoung; Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha E-mail: Dockha@kist.re.kr; Lim, Si-Hyung

    2014-07-07

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  3. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man Mete, Tayfun; Ellmer, Klaus

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

  4. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    SciTech Connect (OSTI)

    Kashiwagi, Y. Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25?nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850?C for 10?min under atmospheric conditions, the resistivity of the ITO film was 5.2?m??cm. The fabricated LED up to 3?mm square surface emitted red light when the on-voltage was exceeded.

  5. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    SciTech Connect (OSTI)

    Chen, Dazheng; Zhang, Chunfu Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-06-16

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  6. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  7. Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Ozone | Argonne National Laboratory Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Title Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Publication Type Journal Article Year of Publication 2016 Authors Mane, AU, Allen, AJ, Kanjolia, RK, Elam, JW Journal Journal of Physical Chemistry C Volume 120 Start Page 9874 Issue 18 Pagination 10 Date Published 04182016 Abstract We investigated the atomic layer deposition (ALD)

  8. Amorphous tin-cadmium oxide films and the production thereof

    DOE Patents [OSTI]

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  9. Corrosion of tin oxide at anodic potentials

    SciTech Connect (OSTI)

    Cachet, H.; Froment, M.; Zenia, F.

    1996-02-01

    Tin dioxide electrodes are used as anodes for the electrochemical destruction of organic pollutants in wastewater. The lifetime of such electrodes is limited because of corrosion phenomena which are shown to take place under anodic polarization. These corrosion processes are studied by quartz microbalance experiments, impedance measurements, transmission electron microscopy and scanning electron microscopy observations, carried out on sprayed SnO{sub 2} layers. Localized corrosion phenomena are observed and related to the reaction of radical species with the oxide surface. The extent and the morphology of the attack is shown to depend on the doping (F, Sb) of the SnO{sub 2} electrodes, the solution pH, and the concentration of chloride ions. it is also shown that because of corrosion the conduction band energy level is shifted toward much more positive potentials, allowing the SnO{sub 2} electrode to be activated for oxygen evolution.

  10. Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

    SciTech Connect (OSTI)

    Warner, Ellis J.; Gladfelter, Wayne L.; Johnson, Forrest; Campbell, Stephen A.

    2015-03-15

    Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

  11. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  12. Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

    SciTech Connect (OSTI)

    Kang, Dong-Ho; Park, Jin-Hong

    2014-12-15

    Highlights: • In- and Sn-based MIC phenomenon on amorphous (α)-Ge is newly reported. • The In- and Sn-MIC phenomenon respectively started at 250 °C and 400 °C. • The Sn-MIC process presents higher sheet resistance and bigger crystal grains. - Abstract: In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

  13. Macro- and microscopic properties of strontium doped indium oxide

    SciTech Connect (OSTI)

    Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

    2014-07-28

    Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In{sub 2}O{sub 3}:(SrO){sub x} were investigated for materials with different doping levels at different temperatures (T?=?20300?C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x?=?10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn{sub 2}O{sub 4}. An unusual property of high level (x?=?10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100200?C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3??10{sup ?13}?cm{sup 2}/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

  14. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  15. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, Carleton H.; Evans, Jr., Joseph Tate

    1998-01-01

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  16. One-pot synthesis of highly mesoporous antimony-doped tin oxide from

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    interpenetrating inorganic/organic networks One-pot synthesis of highly mesoporous antimony-doped tin oxide from interpenetrating inorganic/organic networks Authors: Volosin, A.M., Sharma, S., Traverse, C., Newman, N., and Seo, D-K. Title: One-pot synthesis of highly mesoporous antimony-doped tin oxide from interpenetrating inorganic/organic networks Source: Journal of Materials Chemistry Year: 2011 Volume: 21 Pages: 13232-13240 ABSTRACT: Highly mesoporous antimony-doped tin oxide (ATO)

  17. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  18. Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

    SciTech Connect (OSTI)

    Park, Suk Won; Jang, Dong Young; Kim, Jun Woo; Shim, Joon Hyung

    2015-07-15

    This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.

  19. Synthesis and Raman spectrum of crystalline indium oxide micro-rods with rectangular cross-section

    SciTech Connect (OSTI)

    Yadav, Kavita Mehta, B. R. Singh, J. P.

    2014-04-24

    Indium oxide (IO) micro-rods with rectangular cross section were synthesized without catalyst in chemical vapor deposition (CVD) system by carbothermal reduction of indium oxide at 900 °C. The rectangular micro-rods (RMRs) were grown on Si substrate in presence of water vapors and Ar atmosphere. Water was used as oxidizing reagent which controls the In/O stoichiometry in RMRs. The IO RMRs have dimensions of about 20 μm in length and about 1 μm width. The growth process involved in formation of RMRs is vapor-solid (VS) mechanism. Raman analysis was performed to obtain the phonon modes of the RMRs and the peaks of Raman spectrum were indexed to the modes being associated with bcc−In{sub 2}O{sub 3}.

  20. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    SciTech Connect (OSTI)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W.

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are

  1. Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

    SciTech Connect (OSTI)

    Kannan Selvaraj, Sathees; Feinerman, Alan; Takoudis, Christos G.

    2014-01-15

    In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1??0.01?nm/cycle within the wide ALD temperature window of 175300?C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3?? cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

  2. Gas Sensors Based on Tin Oxide Nanoparticles Synthesized from a Mini-Arc Plasma Source

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lu, Ganhua; Huebner, Kyle L.; Ocola, Leonidas E.; Gajdardziska-Josifovska, Marija; Chen, Junhong

    2006-01-01

    Minimore » aturized gas sensors or electronic noses to rapidly detect and differentiate trace amount of chemical agents are extremely attractive. In this paper, we report on the fabrication and characterization of a functional tin oxide nanoparticle gas sensor. Tin oxide nanoparticles are first synthesized using a convenient and low-cost mini-arc plasma source. The nanoparticle size distribution is measured online using a scanning electrical mobility spectrometer (SEMS). The product nanoparticles are analyzed ex-situ by high resolution transmission electron microscopy (HRTEM) for morphology and defects, energy dispersive X-ray (EDX) spectroscopy for elemental composition, electron diffraction for crystal structure, and X-ray photoelectron spectroscopy (XPS) for surface composition. Nonagglomerated rutile tin oxide ( SnO 2 ) nanoparticles as small as a few nm have been produced. Larger particles bear a core-shell structure with a metallic core and an oxide shell. The nanoparticles are then assembled onto an e-beam lithographically patterned interdigitated electrode using electrostatic force to fabricate the gas sensor. The nanoparticle sensor exhibits a fast response and a good sensitivity when exposed to 100 ppm ethanol vapor in air.« less

  3. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1996-12-03

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  4. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1997-03-04

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  5. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1996-01-01

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  6. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1997-01-01

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  7. Ion implantation and dynamic recovery of tin-doped indium oxide films

    SciTech Connect (OSTI)

    Shigesato, Yuzo; Paine, D.C.; Haynes, T.E.

    1993-09-01

    The effect of O{sup +} on implantation on the electronic (carrier density, mobility), resistivity and microstructural properties of thin film Sn-doped In{sub 2}O{sub 3} (ITO) was studied. Both polycrystalline (c-) and amorphous (a-) ITO thin films, 200 nm thick, were implanted at substrate temperatures ranging from {minus}196 to 300{degrees} C with 80 keV O{sup +} at doses ranging from 0 to 4.0{times}10{sup 15} cm{sup {minus}2}. X-ray diffraction studies show that polycrystalline ITO remains crystalline even after implantation with 80 keV O{sup +} at {minus}196{degrees}C to a dose of 4.0{times}10{sup 15} cm{sup {minus}2} which suggests that dynamic recovery processes are active in ITO at this low temperature. Although the x-ray diffraction pattern of the polycrystalline ITO remains unchanged with implant dose, the electrical properties were seen to degrade when implanted to a dose of 1.0{times}10{sup 15}cm{sup {minus}2} below 200{degrees}C. In contrast, amorphous ITO films remains amorphous upon ion implantation and shows almost no degradation in resistivity when implanted below 16{degrees}C. The recrystallization temperature of amorphous ITO is about 150{degrees}C in the absence of ion implantation.

  8. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  9. Flexible indium zinc oxide/Ag/indium zinc oxide multilayer electrode grown on polyethersulfone substrate by cost-efficient roll-to-roll sputtering for flexible organic photovoltaics

    SciTech Connect (OSTI)

    Park, Yong-Seok; Kim, Han-Ki

    2010-01-15

    The authors describe the preparation and characteristics of flexible indium zinc oxide (IZO)-Ag-IZO multilayer electrodes grown on flexible polyethersulfone (PES) substrates using a roll-to-roll sputtering system for use in flexible organic photovoltaics. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO-Ag-IZO multilayer electrode with a sheet resistance of 6.15 {epsilon}/square, optical transmittance of 87.4%, and figure of merit value of 42.03x10{sup -3} {Omega}{sup -1} on the PES substrate. In addition, the IZO-Ag-IZO multilayer electrode exhibited superior flexibility to the roll-to-roll sputter grown single ITO electrode due to the existence of a ductile Ag layer between the IZO layers and stable amorphous structure of the IZO film. Furthermore, the flexible organic solar cells (OSCs) fabricated on the roll-to-roll sputter grown IZO-Ag-IZO electrode showed higher power efficiency (3.51%) than the OSCs fabricated on the roll-to-roll sputter grown single ITO electrode (2.67%).

  10. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    SciTech Connect (OSTI)

    Zhang, Yan; Yu, Jianqiang; Sun, Kai; Zhu, Yukun; Bu, Yuyu; Chen, Zhuoyuan

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  11. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, Andr

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  12. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1979-01-01

    In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

  13. Investigation of fluorine-doped tin oxide based optically transparent E-shaped patch antenna for terahertz communications

    SciTech Connect (OSTI)

    Anand, S. E-mail: darak.mayur@gmail.com Darak, Mayur Sudesh E-mail: darak.mayur@gmail.com Kumar, D. Sriram E-mail: darak.mayur@gmail.com

    2014-10-15

    In this paper, a fluorine-doped tin oxide based optically transparent E-shaped patch antenna is designed and its radiation performance is analyzed in the 705 – 804 GHz band. As optically transparent antennas can be mounted on optical display, they facilitate the reduction of overall system size. The proposed antenna design is simulated using electromagnetic solver - Ansys HFSS and its characteristics such as impedance bandwidth, directivity, radiation efficiency and gain are observed. Results show that the fluorine-doped tin oxide based optically transparent patch antenna overcomes the conventional patch antenna limitations and thus the same can be used for solar cell antenna used in satellite systems.

  14. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 Ωcm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nmmore » (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  15. Advanced materials for solid oxide fuel cells: Hafnium-Praseodymium-Indium Oxide System

    SciTech Connect (OSTI)

    Bates, J.L.; Griffin, C.W.; Weber, W.J.

    1988-06-01

    The HfO/sub 2/-PrO/sub 1.83/-In/sub 2/O/sub 3/ system has been studied at the Pacific Northwest Laboratory to develop alternative, highly electrically conducting oxides as electrode and interconnection materials for solid oxide fuel cells. A coprecipitation process was developed for synthesizing single-phase, mixed oxide powders necessary to fabricate powders and dense oxides. A ternary phase diagram was developed, and the phases and structures were related to electrical transport properties. Two new phases, an orthorhombic PrInO/sub 3/ and a rhombohedral Hf/sub 2/In/sub 2/O/sub 7/ phase, were identified. The highest electronic conductivity is related to the presence of a bcc, In/sub 2/O/sub 3/ solid solution (ss) containing HfO/sub 2/ and PrO/sub 1.83/. Compositions containing more than 35 mol % of the In/sub 2/O/sub 3/ ss have electrical conductivities greater than 10/sup /minus/1/ (ohm-cm)/sup /minus/1/, and the two or three phase structures that contain this phase appear to exhibit mixed electronic-ionic conduction. The high electrical conductivities and structures similar to the Y/sub 2/O/sub 3/-stabilized ZrO/sub 2/(HfO/sub 2/) electrolyte give these oxides potential for use as cathodes in solid oxide fuel cells. 21 refs.

  16. Sensing behaviour of nanosized zinc-tin composite oxide towards liquefied petroleum gas and ethanol

    SciTech Connect (OSTI)

    Singh, Ravi Chand; Singh, Onkar; Singh, Manmeet Pal; Chandi, Paramdeep Singh; Thangaraj, R.

    2010-09-15

    A chemical route has been used to synthesize composite oxides of zinc and tin. An ammonia solution was added to equal amounts of zinc and tin chloride solutions of same molarities to obtain precipitates. Three portions of these precipitates were annealed at 400, 600 and 800 {sup o}C, respectively. Results of X-ray diffraction and transmission electron microscopy clearly depicted coexistence of phases of nano-sized SnO{sub 2}, ZnO, Zn{sub 2}SnO{sub 4} and ZnSnO{sub 3}. The effect of annealing on structure, morphology and sensing has been observed as well. It has been observed that annealing promoted growth of Zn{sub 2}SnO{sub 4} and ZnSnO{sub 3} at the expense of zinc. The sensing response of fabricated sensors from these materials to 250 ppm LPG and ethanol has been investigated. The sensor fabricated from powder annealed at 400 {sup o}C responded better to LPG than ethanol.

  17. Three-dimensional photonic crystal fluorinated tin oxide (FTO) electrodes : synthesis and optical and electrical properties.

    SciTech Connect (OSTI)

    Yang, Z.; Gao, S.; Li, W.; Vlasko-Vlasov, V.; Welp, U.; Kwok, W.-K.; Xu, T.

    2011-04-01

    Photovoltaic (PV) schemes often encounter a pair of fundamentally opposing requirements on the thickness of semiconductor layer: a thicker PV semiconductor layer provides enhanced optical density, but inevitably increases the charge transport path length. An effective approach to solve this dilemma is to enhance the interface area between the terminal electrode, i.e., transparent conducting oxide (TCO) and the semiconductor layer. As such, we report a facile, template-assisted, and solution chemistry-based synthesis of 3-dimensional inverse opal fluorinated tin oxide (IO-FTO) electrodes. Synergistically, the photonic crystal structure possessed in the IO-FTO exhibits strong light trapping capability. Furthermore, the electrical properties of the IO-FTO electrodes are studied by Hall effect and sheet resistance measurement. Using atomic layer deposition method, an ultrathin TiO{sub 2} layer is coated on all surfaces of the IO-FTO electrodes. Cyclic voltammetry study indicates that the resulting TiO{sub 2}-coated IO-FTO shows excellent potentials as electrodes for electrolyte-based photoelectrochemical solar cells.

  18. PALLADIUM DOPED TIN OXIDE BASED HYDROGEN GAS SENSORS FOR SAFETY APPLICATIONS

    SciTech Connect (OSTI)

    Kasthurirengan, S.; Behera, Upendra; Nadig, D. S.

    2010-04-09

    Hydrogen is considered to be a hazardous gas since it forms a flammable mixture between 4 to 75% by volume in air. Hence, the safety aspects of handling hydrogen are quite important. For this, ideally, highly selective, fast response, small size, hydrogen sensors are needed. Although sensors based on different technologies may be used, thin-film sensors based on palladium (Pd) are preferred due to their compactness and fast response. They detect hydrogen by monitoring the changes to the electrical, mechanical or optical properties of the films. We report the development of Pd-doped tin-oxide based gas sensors prepared on thin ceramic substrates with screen printed platinum (Pt) contacts and integrated nicrome wire heaters. The sensors are tested for their performances using hydrogen-nitrogen gas mixtures to a maximum of 4%H{sub 2} in N{sub 2}. The sensors detect hydrogen and their response times are less than a few seconds. Also, the sensor performance is not altered by the presence of helium in the test gas mixtures. By the above desired performance characteristics, field trials of these sensors have been undertaken. The paper presents the details of the sensor fabrication, electronic circuits, experimental setup for evaluation and the test results.

  19. Tailoring of absorption edge by thermal annealing in tin oxide thin films

    SciTech Connect (OSTI)

    Thakur, Anup; Gautam, Sanjeev; Kumar, Virender; Chae, K. H.; Lee, Ik-Jae; Shin, Hyun Joon

    2015-05-15

    Tin oxide (SnO{sub 2}) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates in different oxygen-to-argon gas-flow ratio (O{sub 2}-to-Ar = 0%, 10%, 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. The X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited in argon environment. Thin films were annealed in air at 200 C, 400 C and 600 C for two hours. All films were highly transparent except the film deposited only in the argon environment. It was also observed that transparency was improved with annealing due to decrease in oxygen vacancies. Atomic force microscopy (AFM), results showed that the surface of all the films were highly flat and smooth. Blue shift was observed in the absorption edge with annealing temperature. It was also observed that there was not big change in the absorption edge with annealing for films deposited in 10% and 50% oxygen-to-argon gas-flow ratio.

  20. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  1. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  2. Aluminum-doped Zinc Oxide Nanoink

    Energy Innovation Portal (Marketing Summaries) [EERE]

    2014-08-15

    Scientists at Berkeley Lab have developed a method for fabricating conductive aluminum-doped zinc oxide (AZO) nanocrystals that provide a lower cost, less toxic, earth-abundant alternative to the widely used transparent conductive oxide (TCO) indium tin oxide while offering comparable optical and electronic properties. TCOs are used in devices such as flat screen displays, photovoltaic cells, photochromic windows, chemical sensors, and biosensors....

  3. Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

    SciTech Connect (OSTI)

    Albrecht, M. Schewski, R.; Irmscher, K.; Galazka, Z.; Markurt, T.; Naumann, M.; Schulz, T.; Uecker, R.; Fornari, R.; Meuret, S.; Kociak, M.

    2014-02-07

    In this paper, we show by optical and electron microscopy based investigations that vacancies in oxides may cluster and form metallic nanoparticles that induce coloration by extinction of visible light. Optical extinction in this case is caused by generation of localized surface plasmon resonances at metallic particles embedded in the dielectric matrix. Based on Mie's approach, we are able to fit the absorption due to indium nanoparticles in In{sub 2}O{sub 3} to our absorption measurements. The experimentally found particle distribution is in excellent agreement with the one obtained from fitting by Mie theory. Indium particles are formed by precipitation of oxygen vacancies. From basic thermodynamic consideration and assuming theoretically calculated activation energies for vacancy formation and migration, we find that the majority of oxygen vacancies form just below the melting point. Since they are ionized at this temperature they are Coulomb repulsive. Upon cooling, a high supersaturation of oxygen vacancies forms in the crystal that precipitates once the Fermi level crosses the transition energy level from the charged to the neutral charge state. From our considerations we find that the ionization energy of the oxygen vacancy must be higher than 200 meV.

  4. Recovery of indium from used LCD panel by a time efficient and environmentally sound method assisted HEBM

    SciTech Connect (OSTI)

    Lee, Cheol-Hee; Jeong, Mi-Kyung; Fatih Kilicaslan, M.; Lee, Jong-Hyeon; Hong, Hyun-Seon; Hong, Soon-Jik

    2013-03-15

    Highlights: ► In this study, we recovered indium from a waste LCD panel. ► The ITO glass was milled to obtain micron size particles in a HEBM machine. ► Effect of particle size of ITO glass on the amount of dissolved In was investigated. ► In a very short time, a considerable amount of In was recovered. ► Amount of HCl in acid solution was decreased to 40 vol.%. - Abstract: In this study, a method which is environmentally sound, time and energy efficient has been used for recovery of indium from used liquid crystal display (LCD) panels. In this method, indium tin oxide (ITO) glass was crushed to micron size particles in seconds via high energy ball milling (HEBM). The parameters affecting the amount of dissolved indium such as milling time, particle size, effect time of acid solution, amount of HCl in the acid solution were tried to be optimized. The results show that by crushing ITO glass to micron size particles by HEBM, it is possible to extract higher amount of indium at room temperature than that by conventional methods using only conventional shredding machines. In this study, 86% of indium which exists in raw materials was recovered about in a very short time.

  5. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect (OSTI)

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. InAs and InGaAs formed by this process decrease an electron barrier height. Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, JV measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  6. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect (OSTI)

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  7. Hydrogenated indium oxide window layers for high-efficiency Cu(In,Ga)Se{sub 2} solar cells

    SciTech Connect (OSTI)

    Jäger, Timo Romanyuk, Yaroslav E.; Nishiwaki, Shiro; Bissig, Benjamin; Pianezzi, Fabian; Fuchs, Peter; Gretener, Christina; Tiwari, Ayodhya N.; Döbeli, Max

    2015-05-28

    High mobility hydrogenated indium oxide is investigated as a transparent contact for thin film Cu(In,Ga)Se{sub 2} (CIGS) solar cells. Hydrogen doping of In{sub 2}O{sub 3} thin films is achieved by injection of H{sub 2}O water vapor or H{sub 2} gas during the sputter process. As-deposited amorphous In{sub 2}O{sub 3}:H films exhibit a high electron mobility of ∼50 cm{sup 2}/Vs at room temperature. A bulk hydrogen concentration of ∼4 at. % was measured for both optimized H{sub 2}O and H{sub 2}-processed films, although the H{sub 2}O-derived film exhibits a doping gradient as detected by elastic recoil detection analysis. Amorphous IOH films are implemented as front contacts in CIGS based solar cells, and their performance is compared with the reference ZnO:Al electrodes. The most significant feature of IOH containing devices is an enhanced open circuit voltage (V{sub OC}) of ∼20 mV regardless of the doping approach, whereas the short circuit current and fill factor remain the same for the H{sub 2}O case or slightly decrease for H{sub 2}. The overall power conversion efficiency is improved from 15.7% to 16.2% by substituting ZnO:Al with IOH (H{sub 2}O) as front contacts. Finally, stability tests of non-encapsulated solar cells in dry air at 80 °C and constant illumination for 500 h demonstrate a higher stability for IOH-containing devices.

  8. Microstructure evolution of Al-doped zinc oxide and Sn-doped indium oxide deposited by radio-frequency magnetron sputtering: A comparison

    SciTech Connect (OSTI)

    Nie, Man; Bikowski, Andre; Ellmer, Klaus

    2015-04-21

    The microstructure and morphology evolution of Al-doped zinc oxide (AZO) and Sn-doped indium oxide (ITO) thin films on borosilicate glass substrates deposited by radio-frequency magnetron sputtering at room temperature (RT) and 300 °C were investigated by X-ray diffraction and atomic force microscopy (AFM). One-dimensional power spectral density (1DPSD) functions derived from the AFM profiles, which can be used to distinguish different growth mechanisms, were used to compare the microstructure scaling behavior of the thin films. The rms roughness R{sub q} evolves with film thickness as a power law, R{sub q} ∼ d{sub f}{sup β}, and different growth exponents β were found for AZO and ITO films. For AZO films, β of 1.47 and 0.56 are obtained for RT and 300 °C depositions, respectively, which are caused by the high compressive stress in the film at RT and relaxation of the stress at 300 °C. While for ITO films, β{sub 1} = 0.14 and β{sub 2} = 0.64 for RT, and β{sub 1} = 0.89 and β{sub 2} = 0.3 for 300 °C deposition are obtained, respectively, which is related to the strong competition between the surface diffusion and shadowing effect and/or grain growth. Electrical properties of both materials as a function of film thickness were also compared. By the modified Fuchs-Sondheimer model fitting of the electrical transport in both materials, different nucleation states are pointed out for both types of films.

  9. The role of cobalt doping on magnetic and optical properties of indium oxide nanostructured thin film prepared by sol–gel method

    SciTech Connect (OSTI)

    Baqiah, H.; Ibrahim, N.B.; Halim, S.A.; Flaifel, Moayad Husein; Abdi, M.H.

    2015-03-15

    Highlights: • Cobalt doped indium oxide thin films have been prepared by a sol–gel method. • The films have a thickness less than 100 nm and grain size less than 10 nm. • The lattice parameters and grain size of films decrease as Co content increase. • The optical band gap of films increases as the grain size decrease. • The films' magnetic behaviour is sensitive to ratio of oxygen defects per Co ions. - Abstract: The effect of Co doping concentration, (x = 0.025–0.2), in In{sub 2−x}Co{sub x}O{sub 3} thin film was investigated by X-rays diffraction (XRD), transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Ultraviolet visible spectrophotometer (UV–vis) and vibrating sample magnetometer (VSM). All films were prepared by sol–gel technique followed by spin coating process. The XRD and XPS measurements indicate that Co{sup +2} has been successfully substituted in In{sup +3} site. The TEM measurement shows nanostructure morphology of the films. The doping of Co in indium oxide resulted in a decrease in the lattice parameters and grain size while the band gap increased with increasing Co concentration. Further, by comparing VSM and XPS results, the magnetic behaviour of the films were found to be sensitive to Co concentrations, oxygen vacancies and ratio of oxygen defects to Co concentrations. The magnetic behaviour of the prepared films was explained using bound magnetic polaron (BMP) model.

  10. Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate

    SciTech Connect (OSTI)

    Einollahzadeh-Samadi, Motahareh; Dariani, Reza S.

    2015-03-15

    In this work, a detailed study of the influence of the thickness on the morphological and optical properties of titanium (Ti) thin films deposited onto rough fluorine-doped tin oxide glass by d.c. magnetron sputtering is carried out. The films were characterized by several methods for composition, crystallinity, morphology, and optical properties. Regardless of the deposition time, all the studied Ti films of 400, 1500, 2000, and 2500?nm in thickness were single crystalline in the ?-Ti phase and also very similar to each other with respect to composition. Using the atomic force microscopy (AFM) technique, the authors analyzed the roughness evolution of the Ti films characteristics as a function of the film thickness. By applying the dynamic scaling theory to the AFM images, a steady growth roughness exponent ??=?0.72??0.02 and a dynamic growth roughness exponent ??=?0.22??0.02 were determined. The value of ? and ? are consistent with nonlinear growth model incorporating random deposition with surface diffusion. Finally, measuring the reflection spectra of the samples by a spectrophotometer in the spectral range of 3001100?nm allowed us to investigate the optical properties. The authors observed the increments of the reflection of Ti films with thickness, which by employing the effective medium approximation theory showed an increase in thickness followed by an increase in the volume fraction of metal.

  11. Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating

    SciTech Connect (OSTI)

    Wang, Liang; Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Berry, J. J.; Ginley, D. S.; Gaspar, Daniel J.; Padmaperuma, Asanga B.

    2010-02-15

    The availability of economically-produced and environmentally-stable transparent conductive oxide (TCO) coatings is critical for the development of a variety of electronic devices requiring transparent electrodes. Such devices include liquid crystal display pixels and organic light emitting diodes (OLEDs),[1, 2] solar cell applications,[3, 4] and electrically heated windows.[5, 6] The materials fulfilling these requirements are usually wide band gap inorganic transparent conductive oxides (TCOs). Tin-doped indium oxide, or ITO, has traditionally been used for electronic TCO applications because of its low resistivity, high work function and transparency. Due to the increasing cost and limited supply of indium and its tendency to migrate in to the device, there has been increasing research interest to substitute ITO with an indium-free material. A number of alternative metal oxides and doped oxides have been evaluated as TCO materials with varying degrees of success.[7, 8] Among these alternatives to ITO, gallium-doped zinc oxide (GZO) [2, 9] and aluminium-doped zinc oxide (AZO) [10, 11] have drawn particular attention. These materials have been demonstrated to have resistivities and transparencies approaching those of the best ITO, low toxicity, and much lower materials cost. Although AZO is attractive as a TCO electrode material, GZO features a greater resistance to oxidation as a result of gallium’s greater electronegativity compared to Submitted to 2 aluminum.[12, 13

  12. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect (OSTI)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  13. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect (OSTI)

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2?V is ?10{sup 9} ? for a device with the radius of 50??m) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2?V is ?10{sup 3} ? for the radius of 50??m) by applying a voltage pulse (e.g., 10?V/1??s). The WORM device has good data-retention and reading-endurance capabilities.

  14. A tunable amorphous p-type ternary oxide system: The highly mismatched alloy of copper tin oxide

    SciTech Connect (OSTI)

    Isherwood, Patrick J. M. Walls, John M.; Butler, Keith T.; Walsh, Aron

    2015-09-14

    The approach of combining two mismatched materials to form an amorphous alloy was used to synthesise ternary oxides of CuO and SnO{sub 2}. These materials were analysed across a range of compositions, and the electronic structure was modelled using density functional theory. In contrast to the gradual reduction in optical band gap, the films show a sharp reduction in both transparency and electrical resistivity with copper contents greater than 50%. Simulations indicate that this change is caused by a transition from a dominant Sn 5s to Cu 3d contribution to the upper valence band. A corresponding decrease in energetic disorder results in increased charge percolation pathways: a “compositional mobility edge.” Contributions from Cu(II) sub band-gap states are responsible for the reduction in optical transparency.

  15. Synthesis of transparent conducting oxide coatings

    DOE Patents [OSTI]

    Elam, Jeffrey W.; Martinson, Alex B. F.; Pellin, Michael J.; Hupp, Joseph T.

    2010-05-04

    A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.

  16. ZnO:H indium-free transparent conductive electrodes for active-matrix display applications

    SciTech Connect (OSTI)

    Chen, Shuming Wang, Sisi

    2014-12-01

    Transparent conductive electrodes based on hydrogen (H)-doped zinc oxide (ZnO) have been proposed for active-matrix (AM) display applications. When fabricated with optimal H plasma power and optimal plasma treatment time, the resulting ZnO:H films exhibit low sheet resistance of 200 Ω/◻ and high average transmission of 85% at a film thickness of 150 nm. The demonstrated transparent conductive ZnO:H films can potentially replace indium-tin-oxide and serve as pixel electrodes for organic light-emitting diodes as well as source/drain electrodes for ZnO-based thin-film transistors. Use of the proposed ZnO:H electrodes means that two photomask stages can be removed from the fabrication process flow for ZnO-based AM backplanes.

  17. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended...

  18. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    stresses, defects, and dislocations. In addition, the small as-deposited indium grains grow into large crystals at ambient conditions. Indium and its compounds have many...

  19. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12.3.2 to investigate the small-scale mechanics of indium nanostructures. Scanning x-ray microdiffraction (SXRD) studies revealed that the indium microstructure is typical...

  20. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect (OSTI)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  1. High performance dye-sensitized solar cells using graphene modified fluorine-doped tin oxide glass by Langmuir–Blodgett technique

    SciTech Connect (OSTI)

    Roh, Ki-Min; Jo, Eun-Hee; Chang, Hankwon; Han, Tae Hee; Jang, Hee Dong

    2015-04-15

    Since the introduction of dye-sensitized solar cells (DSSCs) with low fabrication cost and high power conversion efficiency, extensive studies have been carried out to improve the charge transfer rate and performance of DSSCs. In this paper, we present DSSCs that use surface modified fluorine-doped tin oxide (FTO) substrates with reduced graphene oxide (r-GO) sheets prepared using the Langmuir–Blodgett (LB) technique to decrease the charge recombination at the TiO{sub 2}/FTO interface. R-GO sheets were excellently attached on FTO surface without physical deformations such as wrinkles; effects of the surface coverage of r-GO on the DSSC performance were also investigated. By using graphene modified FTO substrates, the resistance at the interface of TiO{sub 2}/FTO was reduced and the power conversion efficiency was increased to 8.44%. - Graphical abstract: DSSCs with graphene modified FTO glass were fabricated with the Langmuir Blodgett technique. GO sheets were transferred to FTO at various surface pressures in order to change the surface density of graphene and the highest power conversion efficiency of the DSSC was 8.44%. - Highlights: • By LB technique, r-GO sheets were coated on FTO without physical deformation. • DSSCs were fabricated with, r-GO modified FTO substrates. • With surface modification by r-GO, the interface resistance of DSSC decreased. • Maximum PCE of the DSSC was increased up to 8.44%.

  2. Hierarchical hollow microsphere and flower-like indium oxide: Controllable synthesis and application as H{sub 2}S cataluminescence sensing materials

    SciTech Connect (OSTI)

    Cai, Pingyang; Bai, Wei; Zhang, Lichun; Song, Hongjie; Su, Yingying; Lv, Yi

    2012-09-15

    Graphical abstract: Hierarchical hollow microsphere and flower-like In{sub 2}O{sub 3} were controllable fabricated through a novel and simple hydrothermal process, and the former showed superior cataluminescence sensing performance to H{sub 2}S. Highlights: ► In{sub 2}O{sub 3} hierarchical hollow sphere were prepared via a hydrothermal route. ► The growth process of In{sub 2}O{sub 3} hierarchical hollow sphere has been investigated. ► The sensor based on prepared In{sub 2}O{sub 3} shows good sensing performance to H{sub 2}S. -- Abstract: In the present work, In{sub 2}O{sub 3} hierarchical hollow microsphere and flower-like microstructure were achieved controllably by a hydrothermal process in the sodium dodecyl sulfate (SDS)-N,N-dimethyl-formamide (DMF) system. XRD, SEM, HRTEM and N{sub 2} adsorption measurements were used to characterize the as-prepared indium oxide materials and the possible mechanism for the microstructures formation was briefly discussed. The cataluminescence gas sensor based on the as-prepared In{sub 2}O{sub 3} was utilized to detect H{sub 2}S concentrations in flowing air. Comparative gas sensing results revealed that the sensor based on hierarchical hollow microsphere exhibited much higher sensing sensitivity in detecting H{sub 2}S gas than the sensor based on flower-like microstructure. The present gas sensor had a fast response time of 5 s and a recovery time of less than 25 s, furthermore, the cataluminescence intensity vs. H{sub 2}S concentration was linear in range of 2–20 μg mL{sup −1} with a detection limit of 0.5 μg mL{sup −1}. The present highly sensitive, fast-responding, and low-cost In{sub 2}O{sub 3}-based gas sensor for H{sub 2}S would have many practical applications.

  3. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Mechanical Behavior of Indium Nanostructures Print Wednesday, 26 May 2010 00:00 Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale

  4. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    SciTech Connect (OSTI)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  5. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  6. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  8. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  9. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  10. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  11. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    have a significant impact on the commercial success of these novel devices. Scanning electron microscopy image of an indium pillar characterized by scanning x-ray...

  12. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical...

  13. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect (OSTI)

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, Jos Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ? Synthesis of cadmium and tin telluride. ? Chemical route to obtain pure crystalline cadmium and tin telluride. ? Effect of the annealing temperature on the crystalline phases. ? Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mssbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 C has proven to be useful to reduce the amount of oxide produced as side product.

  14. Polaron absorption in amorphous tungsten oxide films

    SciTech Connect (OSTI)

    Berggren, Lars; Azens, Andris; Niklasson, Gunnar A.

    2001-08-15

    Amorphous thin films of tungsten oxide were deposited by sputtering onto glass substrates covered by conductive indium--tin oxide. The density and stoichiometry were determined by Rutherford backscattering spectrometry. Lithium ions were intercalated electrochemically into the films. The optical reflectance and transmittance were measured in the wavelength range from 0.3 to 2.5 {mu}m, at a number of intercalation levels. The polaron absorption peak becomes more symmetric and shifts to higher energies until an intercalation level of 0.25 to 0.3 Li{sup +}/W, where a saturation occurs. The shape of the polaron peak is in very good agreement with the theory of Bryksin [Fiz. Tverd. Tela 24, 1110 (1982)]. Within this model, the shift of the absorption peak is interpreted as an increase in the Fermi level of the material as more Li ions are inserted. {copyright} 2001 American Institute of Physics.

  15. Mobility of indium on the ZnO(0001) surface

    SciTech Connect (OSTI)

    Heinhold, R.; Reeves, R. J.; Allen, M. W.; Williams, G. T.; Evans, D. A.

    2015-02-02

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  16. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    26 May 2010 00:00 Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical...

  17. News Item

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    properties of colloidal indium tin oxide (ITO) nanocrystals. Significance and Impact Understanding the connection between the structural and optoelectronic properties...

  18. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S.; Nekuda, Jennifer A.

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  19. Efficient inverted polymer solar cells based on conjugated polyelectrolyte and zinc oxide modified ITO electrode

    SciTech Connect (OSTI)

    Yuan, Tao; Zhu, Xiaoguang; Tu, Guoli; Zhou, Lingyu; Zhang, Jian

    2015-02-23

    Efficient inverted polymer solar cells (PSCs) were constructed by utilizing a conjugated polyelectrolyte PF{sub EO}SO{sub 3}Na and zinc oxide to modify the indium tin oxide (ITO) electrode. The ITO electrode modified by PF{sub EO}SO{sub 3}Na and zinc oxide possesses high transparency, increased electron mobility, smoothened surface, and lower work function. PTB7:PC{sub 71}BM inverted PSCs containing the modified ITO electrode achieved a high power conversion efficiency (PCE) of 8.49%, exceeding that of the control device containing a ZnO modified ITO electrode (7.48%). Especially, PCE-10:PC{sub 71}BM inverted polymer solar cells achieved a high PCE up to 9.4%. These results demonstrate a useful approach to improve the performance of inverted polymer solar cells.

  20. Multifunctional oxides for integrated manufacturing of efficient graphene electrodes for organic electronics

    SciTech Connect (OSTI)

    Kidambi, Piran R.; Robertson, John; Hofmann, Stephan; Weijtens, Christ; Meyer, Jens

    2015-02-09

    Using multi-functional oxide films, we report on the development of an integration strategy for scalable manufacturing of graphene-based transparent conducting electrodes (TCEs) for organic electronics. A number of fundamental and process challenges exists for efficient graphene-based TCEs, in particular, environmentally and thermally stable doping, interfacial band engineering for efficient charge injection/extraction, effective wetting, and process compatibility including masking and patterning. Here, we show that all of these challenges can be effectively addressed at once by coating graphene with a thin (>10 nm) metal oxide (MoO{sub 3} or WO{sub 3}) layer. We demonstrate graphene electrode patterning without the need for conventional lithography and thereby achieve organic light emitting diodes with efficiencies exceeding those of standard indium tin oxide reference devices.

  1. Surface Catalysis of Water Oxidation by the Blue Ruthenium Dimer

    SciTech Connect (OSTI)

    Jurss, Jonah W.; Concepcion, Javier C.; Norris, Michael R.; Templeton, Joseph L.; Meyer, Thomas J.

    2010-04-08

    Single-electron activation of multielectron catalysis has been shown to be viable in catalytic water oxidation with stepwise proton-coupled electron transfer, leading to high-energy catalytic precursors. For the blue dimer, cis,cis-[(bpy)2(H2O)RuIIIORuIII(H2O)(bpy)2]4+, the first well-defined molecular catalyst for water oxidation, stepwise 4e-/4H+ oxidation occurs to give the reactive precursor [(O)RuVORuV(O)]4+. This key intermediate is kinetically inaccessible at an unmodified metal oxide surface, where the only available redox pathway is electron transfer. We report here a remarkable surface activation of indium-tin oxide (In2O3:Sn) electrodes toward catalytic water oxidation by the blue dimer at electrodes derivatized by surface phosphonate binding of [Ru(4,4'-((HO)2P(O)CH2)2bpy)2(bpy)]2+. Surface binding dramatically improves the rate of surface oxidation of the blue dimer and induces water oxidation catalysis.

  2. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  3. Enhanced electron collection in TiO{sub 2} nanoparticle-based dye-sensitized solar cells by an array of metal micropillars on a planar fluorinated tin oxide anode.

    SciTech Connect (OSTI)

    Yang, Z.; Xu, T.; Gao, S.; Welp, U.; Kwok, W.-K.; Materials Science Division; Northern Illinois Univ.

    2010-01-01

    Charge collection efficiency exhibits a strong influence on the overall efficiency of nanocrystalline dye-sensitized solar cells. It highly depends on the quality of the TiO{sub 2} nanoparticulate layer in the photoanode, and hence most efforts have been directed on the improvement and deliberate optimization of the quality the TiO{sub 2} nanocrystalline layer. In this work, we aim to reduce the electron collection distance between the place of origin in the TiO{sub 2} layer to the electron-collecting TCO anode as an alternative way to enhance the charge collection efficiency. We use an array of metal micropillars on fluorine-doped tin oxide (FTO) as the collecting anode. Under the same conditions, the Ni micropillar-on-FTO-based dye-sensitized solar cells (DSSCs) exhibit a remarkably enhanced current density, which is approximately 1.8 times greater compared with the bare FTO-based DSSCs. Electron transport was investigated using the electrochemical impedance spectroscopy technique. Our results reveal that the electron collection time in Ni micropillar-on-FTO-based DSSCs is much shorter than that of bare FTO-based DSSCs, indicating faster electron collection due to the Ni micropillars buried in TiO{sub 2} nanoparticulate layer that serve as electron transport shortcuts. As a result, the charge collection efficiency was enhanced by 15?20% with respect to that of the bare FTO-based DSSCs. Consequently, the overall energy conversion efficiency was found to increase from 2.6% in bare FTO-based DSSCs to 4.8% in Ni micropillar-on-FTO-based DSSCs for a 6 {micro}m-thick TiO{sub 2} NP film.

  4. Immobilization of azurin with retention of its native electrochemical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    properties at alkylsilane self-assembled monolayer modified indium tin oxide Immobilization of azurin with retention of its native electrochemical properties at alkylsilane self-assembled monolayer modified indium tin oxide Authors: Ashur, I. and Jones, A. K. Title: Immobilization of azurin with retention of its native electrochemical properties at alkylsilane self-assembled monolayer modified indium tin oxide Source: Electrochimica Acta Year: 2012 Volume: 85 Pages: 169-174 ABSTRACT: Indium

  5. Zinc oxide modified with benzylphosphonic acids as transparent electrodes in regular and inverted organic solar cell structures

    SciTech Connect (OSTI)

    Lange, Ilja; Reiter, Sina; Kniepert, Juliane; Piersimoni, Fortunato; Brenner, Thomas; Neher, Dieter; Pätzel, Michael; Hildebrandt, Jana; Hecht, Stefan

    2015-03-16

    An approach is presented to modify the work function of solution-processed sol-gel derived zinc oxide (ZnO) over an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on phosphonic acids with different dipole moments. This allows us to apply ZnO as charge selective bottom electrodes in either regular or inverted solar cell structures, using poly(3-hexylthiophene):phenyl-C71-butyric acid methyl ester as the active layer. These devices compete with or even surpass the performance of the reference on indium tin oxide/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate. Our findings highlight the potential of properly modified ZnO as electron or hole extracting electrodes in hybrid optoelectronic devices.

  6. Copper Indium Gallium Diselenide | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Since its initial development, copper indium diselenide (CuInSe2) thin-film technology has been considered promising for solar cells because of its favorable electronic and optical ...

  7. Method of preparing doped oxide catalysts for lean NOx exhaust

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-09

    The lean NOx catalyst includes a substrate, an oxide support material, preferably .gamma.-alumina deposited on the substrate and a metal or metal oxide promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium cerium, and vanadium, and oxides thereof, and any combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between 80 and 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to about 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  8. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    SciTech Connect (OSTI)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van; Xu, M.; Vroon, Z.; Belt, R. van de; Buskens, P. E-mail: buskens@dwi.rwth-aachen.de

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  9. Metal/metal oxide doped oxide catalysts having high deNOx selectivity for lean NOx exhaust aftertreatment systems

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-16

    A lean NOx catalyst and method of preparing the same is disclosed. The lean NOx catalyst includes a ceramic substrate, an oxide support material, preferably .gamma.-alumina, deposited on the substrate and a metal promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium, cerium, vanadium, oxides thereof, and combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between about 80 to 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  10. SEPARATION OF TIN FROM ALLOYS

    DOE Patents [OSTI]

    Kattner, W.T.

    1959-08-11

    A process is described for recovering tin from bronze comprising melting the bronze; slowly cooling the melted metal to from 280 to 240 deg C whereby eta- phase bronze crystallizes; separating the eta-bronze crystals from the liquid metal by mechanical means; melting the separated crystals; slowly cooling the melted eta-crystals to a temperature from 520 to 420 deg C whereby crystals of epsilonbronze precipitate; removing said epsilon-crystals from the remaining molten metal; and reintroducing the remaining molten metal into the process for eta-crystallization.

  11. Structure Evolution and Pulverization of Tin Nanoparticles during...

    Office of Scientific and Technical Information (OSTI)

    of Tin Nanoparticles during Lithiation-Delithiation Cycling. Citation Details In-Document Search Title: Structure Evolution and Pulverization of Tin Nanoparticles during ...

  12. ?-tin?Imma?sh Phase Transitions of Germanium (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    DOE PAGES Search Results Publisher's Accepted Manuscript: -tinImmash Phase Transitions of Germanium Prev Next Title: -tinImmash Phase Transitions of Germanium...

  13. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sren; Jessen, Frank; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

  14. Copper-silver-titanium-tin filler metal for direct brazing of structural ceramics

    DOE Patents [OSTI]

    Moorhead, Arthur J.

    1988-04-05

    A method of joining ceramics and metals to themselves and to one another at about 800.degree. C. is described using a brazing filler metal consisting essentially of 35 to 50 at. % copper, 40 to 50 at. % silver, 1 to 15 at. % titanium, and 2 to 8 at. % tin. This method produces strong joints that can withstand high service temperatures and oxidizing environments.

  15. Platelet composite coatings for tin whisker mitigation

    SciTech Connect (OSTI)

    Rohwer, Lauren E. S.; Martin, James E.

    2015-09-14

    In this study, reliable methods for tin whisker mitigation are needed for applications that utilize tin-plated commercial components. Tin can grow whiskers that can lead to electrical shorting, possibly causing critical systems to fail catastrophically. The mechanisms of tin whisker growth are unclear and this makes prediction of the lifetimes of critical components uncertain. The development of robust methods for tin whisker mitigation is currently the best approach to eliminating the risk of shorting. Current mitigation methods are based on unfilled polymer coatings that are not impenetrable to tin whiskers. In this paper we report tin whisker mitigation results for several filled polymer coatings. The whisker-penetration resistance of the coatings was evaluated at elevated temperature and high humidity and under temperature cycling conditions. The composite coatings comprised Ni and MgF2-coated Al/Ni/Al platelets in epoxy resin or silicone rubber. In addition to improved whisker mitigation, these platelet composites have enhanced thermal conductivity and dielectric constant compared with unfilled polymers.

  16. Platelet composite coatings for tin whisker mitigation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rohwer, Lauren E. S.; Martin, James E.

    2015-09-14

    In this study, reliable methods for tin whisker mitigation are needed for applications that utilize tin-plated commercial components. Tin can grow whiskers that can lead to electrical shorting, possibly causing critical systems to fail catastrophically. The mechanisms of tin whisker growth are unclear and this makes prediction of the lifetimes of critical components uncertain. The development of robust methods for tin whisker mitigation is currently the best approach to eliminating the risk of shorting. Current mitigation methods are based on unfilled polymer coatings that are not impenetrable to tin whiskers. In this paper we report tin whisker mitigation results formore » several filled polymer coatings. The whisker-penetration resistance of the coatings was evaluated at elevated temperature and high humidity and under temperature cycling conditions. The composite coatings comprised Ni and MgF2-coated Al/Ni/Al platelets in epoxy resin or silicone rubber. In addition to improved whisker mitigation, these platelet composites have enhanced thermal conductivity and dielectric constant compared with unfilled polymers.« less

  17. Therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Meinken, George E.; Mausner, Leonard F.; Atkins, Harold L.

    2003-01-01

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

  18. Infrared Images of Shock-Heated Tin

    SciTech Connect (OSTI)

    Craig W. McCluskey; Mark D. Wilke; William D. Turley; Gerald D. Stevens; Lynn R. Veeser; Michael Grover

    2004-09-01

    High-resolution, gated infrared images were taken of tin samples shock heated to just below the 505 K melting point. Sample surfaces were either polished or diamond-turned, with grain sizes ranging from about 0.05 to 10 mm. A high explosive in contact with a 2-mm-thick tin sample induced a peak sample stress of 18 GPa. Interferometer data from similarly-driven tin shots indicate that immediately after shock breakout the samples spall near the free (imaged) surface with a scab thickness of about 0.1 mm.

  19. Structural characterization and electronic structure of laser treated TiN thin film

    SciTech Connect (OSTI)

    Soni, Sheetal; Nair, K. G. M.; Phase, D. M.; Gupta, Ratnesh

    2012-06-05

    TiN thin films prepared by laser treatment using Kr-F excimer laser in the controlled atmosphere. The depth distribution and composition of nitrogen and contaminated oxygen have been determined by non-Rutherford proton backscattering using 1.7 MeV Tendetron accelerator. The electronic structure of TiN thin film have been characterized by resonant photoelectron spectroscopy using indus-I synchrotron radiation. Specifically, complex resonance profile that shows the enhancement at 45 eV which is consistent with the resonant photoemission of Ti 3d states involved in the Titanium nitride and oxide.

  20. Sputtering of neutral and ionic indium clusters

    SciTech Connect (OSTI)

    Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

    1993-10-01

    Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident {approximately}4 keV Ar{sup +} ions. In the secondary neutral mass spectra, indium clusters as large as In{sub 32} were observed. In the secondary ion mass spectra, indium clusters up to In{sub 18}{sup +} were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be {minus}5.6 and {minus}4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions.

  1. Thermoelectric Properties of Indium-Filled Skutterudites

    SciTech Connect (OSTI)

    He, Tao; Chen, Jiazhong; Rosenfeld, H. David; Subramanian, M.A.

    2008-09-18

    Structural, electrical, and thermal transport properties of CoSb{sub 3} partially filled with indium are reported. Polycrystalline samples of In{sub x}Co{sub 4}Sb{sub 12} (0 {le} x {le} 0.3) were prepared by solid-state reaction under a gas mixture of 5% H{sub 2} and 95% Ar. The solubility limit of the indium filling voids in CoSb{sub 3} was found to be close to 0.22. Synchrotron X-ray diffraction refinement of the x = 0.2 sample showed that the indium is located in the classic rattler site and has a substantially larger thermal factor than those of Co and Sb. The electrical resistivity, Seebeck coefficients, and thermal conductivity of the In{sub x}Co{sub 4}Sb{sub 12} samples were measured in the temperature range of 300-600 K. All samples showed metal-like behavior, and the large negative Seebeck coefficients indicated n-type conduction. The thermal conductivity decreased with increasing temperature for all samples. A thermoelectric figure-of-merit (ZT) {ge} 1 (n-type) has been achieved when x {ge} 0.2 in In{sub x}Co{sub 4}Sb{sub 12} at 575 K.

  2. Oxide

    SciTech Connect (OSTI)

    2014-07-15

    Oxide is a modular framework for feature extraction and analysis of executable files. Oxide is useful in a variety of reverse engineering and categorization tasks relating to executable content.

  3. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  4. Palladium-tin catalysts for the direct synthesis of H2O2 with high selectivity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Freakley, Simon J.; He, Qian; Harrhy, Jonathan H.; Lu, Li; Crole, David A.; Morgan, David J.; Ntainjua, Edwin N.; Edwards, Jennifer K.; Carley, Albert F.; Borisevich, Albina Y.; et al

    2016-02-25

    The direct synthesis of hydrogen peroxide (H2O2 ) from H2 and O2 represents a potentially atom-efficient alternative to the current industrial indirect process. We show that the addition of tin to palladium catalysts coupled with an appropriate heat treatment cycle switches off the sequential hydrogenation and decomposition reactions, enabling selectivities of >95% toward H2O2 . This effect arises from a tin oxide surface layer that encapsulates small Pd-rich particles while leaving larger Pd-Sn alloy particles exposed. In conclusion, we show that this effect is a general feature for oxide-supported Pd catalysts containing an appropriate second metal oxide component, and wemore » set out the design principles for producing high-selectivity Pd-based catalysts for direct H2O2 production that do not contain gold.« less

  5. Reduction And Stabilization (Immobilization) Of Pertechnetate To An Immobile Reduced Technetium Species Using Tin(II) Apatite

    SciTech Connect (OSTI)

    Duncan, J. B.

    2012-11-02

    Synthetic tin(II)apatite reduces pertechnetate from the mobile +7 to a non-mobile oxidation state and sequesters the technetium, preventing re-oxidization to mobile +7 state under acidic or oxygenated conditions. Previous work indicated technetium reacted Sn(II)apatite can achieve an ANSI leachability index of 12.8 in Cast Stone. An effect by pH is observed on the distribution coefficient, the highest distribution coefficient being l70,900 observed at pH levels of 2.5 to 10.2. The tin apatite was resistant to releasing technetium under test conditions.

  6. J/{psi} production in indium-indium collisions at SPS energies

    SciTech Connect (OSTI)

    Pillot, P.; Ducroux, L.; Guichard, A.; Tieulent, R.; Arnaldi, R.; Colla, A.; Cortese, P.; Ferretti, A.; Oppedisano, C.; Scomparin, E.; Averbeck, R.; Drees, A.; Banicz, K.; Keil, M.; Castor, J.; Devaux, A.; Force, P.; Manso, F.; Chaurand, B.; Cicalo, C.

    2006-01-12

    The NA60 experiment collected data on dimuon production in indium-indium collisions at 158 GeV/c per incident nucleon, in year 2003, to contribute to the clarification of several questions raised by previous experiments studying high-energy heavy-ion physics at the CERN SPS in search of the quark gluon plasma. Among these previous results stands the observation, by NA50, that the production yield of J/{psi} mesons is suppressed in central Pb-Pb collisions beyond the normal nuclear absorption defined by proton-nucleus data. By comparing the centrality dependence of the suppression pattern between different colliding systems, S-U, Pb-Pb and In-In, we should be able to identify the corresponding scaling variable, and the physics mechanism driving the suppression. In this paper, we will present the ratio of J/{psi} and Drell-Yan production cross-sections in indium-indium collisions, in three centrality bins, and how these values compare to previous measurements. We will also present a study of the transverse momentum distributions of the J/{psi} mesons, in seven centrality bins.

  7. Low frequency pressure modulation of indium antimonide

    SciTech Connect (OSTI)

    Hallock, Gary A.; Meier, Mark A.

    2012-07-15

    A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient {alpha} of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

  8. Nanoscale Au-In alloy-oxide core-shell particles as electrocatalysts for efficient hydroquinone detection

    SciTech Connect (OSTI)

    Sutter, E.; Tong, X.; Medina-Plaza, C.; Rodriguez-Mendez, M. L.; Sutter, P.

    2015-10-09

    The presence of hydroquinone (HQ), a phenol ubiquitous in nature and widely used in industry, needs to be monitored because of its toxicity to the environment. Here we demonstrate efficient detection of HQ using simple, fast, and noninvasive electrochemical measurements on indium tin oxide (ITO) electrodes modified with nanoparticles comprising bimetallic Au–In cores and mixed Au–In oxide shells. Whereas bare ITO electrodes show very low activity for the detection of HQ, their modification with Au–In core–shell nanoparticles induces a pronounced shift of the oxidation peak to lower potentials, i.e., facilitated oxidation. The response of the different electrodes was correlated with the initial composition of the bimetallic nanoparticle cores, which in turn determined the amount of Au and In stabilized on the surface of the amorphous Au–In oxide shells available for the electrochemical reaction. While adding core–shell nanostructures with different compositions of the alloy core facilitates the electrocatalytic (reduction-) oxidation of HQ, the activity is highest for particles with AuIn cores (i.e., a Au:In ratio of 1). This optimal system is found to follow a single pathway, the two-electron oxidation of the quinone–hydroquinone couple, which gives rise to high oxidation peaks and is most effective in facilitating the electrode-to-analyte charge transfer and thus detection. The limits of detection (LOD) decreased when increasing the amount of Au exposed on the surface of the amorphous Au–In oxide shells. As a result the LODs were in the range of 10–5 – 10–6 M and were lower than those obtained using bulk Au.

  9. Nanoscale Au-In alloy-oxide core-shell particles as electrocatalysts for efficient hydroquinone detection

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sutter, E.; Tong, X.; Medina-Plaza, C.; Rodriguez-Mendez, M. L.; Sutter, P.

    2015-10-09

    The presence of hydroquinone (HQ), a phenol ubiquitous in nature and widely used in industry, needs to be monitored because of its toxicity to the environment. Here we demonstrate efficient detection of HQ using simple, fast, and noninvasive electrochemical measurements on indium tin oxide (ITO) electrodes modified with nanoparticles comprising bimetallic Au–In cores and mixed Au–In oxide shells. Whereas bare ITO electrodes show very low activity for the detection of HQ, their modification with Au–In core–shell nanoparticles induces a pronounced shift of the oxidation peak to lower potentials, i.e., facilitated oxidation. The response of the different electrodes was correlated withmore » the initial composition of the bimetallic nanoparticle cores, which in turn determined the amount of Au and In stabilized on the surface of the amorphous Au–In oxide shells available for the electrochemical reaction. While adding core–shell nanostructures with different compositions of the alloy core facilitates the electrocatalytic (reduction-) oxidation of HQ, the activity is highest for particles with AuIn cores (i.e., a Au:In ratio of 1). This optimal system is found to follow a single pathway, the two-electron oxidation of the quinone–hydroquinone couple, which gives rise to high oxidation peaks and is most effective in facilitating the electrode-to-analyte charge transfer and thus detection. The limits of detection (LOD) decreased when increasing the amount of Au exposed on the surface of the amorphous Au–In oxide shells. As a result the LODs were in the range of 10–5 – 10–6 M and were lower than those obtained using bulk Au.« less

  10. Novel solar light driven photocatalyst, zinc indium vanadate for photodegradation of aqueous phenol

    SciTech Connect (OSTI)

    Mahapure, Sonali A.; Ambekar, Jalindar D.; Nikam, Latesh K.; Marimuthu, R.; Kulkarni, Milind V.

    2011-05-15

    Graphical abstract: Novel photocatalyst, zinc indium vanadate (ZnIn{sub 2}V{sub 2}O{sub 9}) demonstrated and showed an excellent photocatalytic activity for phenol degradation under visible light. Research highlights: {yields} Designing and identification of a photocatalyst having prospective potential application to be used in visible light (400-800 nm). {yields} Successful synthesis of novel ZnIn{sub 2}V{sub 2}O{sub 9} by solid state route. {yields} Confirmation of the designed product using characterization techniques. {yields} Application study comprising photodegradation of aqueous phenol at visible light despite of UV radiations. -- Abstract: In the present investigation, we have demonstrated the synthesis of novel photocatalyst, zinc indium vanadate (ZIV) by solid-solid state route using respective oxides of zinc, indium and vanadium. This novel photocatalyst was characterized using XRD, FESEM, UV-DRS and FTIR in order to investigate its structural, morphological and optical properties. XRD clearly shows the formation of phase pure ZIV of triclinic crystal structure with good crystallinity. FESEM micrographs showed the clustered morphology having particle size between 0.5 and 1 {mu}m. Since, optical study showed the band gap around 2.8 eV, i.e. in visible region, we have performed the photocatalytic activity of phenol degradation under visible light irradiation. The photodecomposition of phenol by ZIV is studied for the first time and an excellent photocatalytic activity was obtained using this novel photocatalyst. Considering the band gap of zinc indium vanadate in visible region, it will also be the potential candidate for water splitting.

  11. 99M-Technetium labeled tin colloid radiopharmaceuticals

    DOE Patents [OSTI]

    Winchell, Harry S.; Barak, Morton; Van Fleet, III, Parmer

    1976-07-06

    An improved 99m-technetium labeled tin(II) colloid, size-stabilized for reticuloendothelial organ imaging without the use of macromolecular stabilizers and a packaged tin base reagent and an improved method for making it are disclosed.

  12. Microwave plasma CVD of NANO structured tin/carbon composites

    DOE Patents [OSTI]

    Marcinek, Marek; Kostecki, Robert

    2012-07-17

    A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

  13. Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Young, David L.; Nemeth, William; Grover, Sachit; Norman, Andrew; Yuan, Hao-Chih; Lee, Benjamin G.; LaSalvia, Vincenzo; Stradins, Paul

    2014-01-01

    We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0,contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0,contact) and the specificmore » contact resistivity (ρcontact) using a TLM pattern. The best ITO/SiO2 passivated contact in this study has J0,contact = 92.5 fA/cm2 and ρcontact = 11.5 mOhm-cm2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0,contact, ρcontact) values. The ITO/SiO2 contacts are found to have a higher J0,contact, but a similar ρcontact compared to the best reported passivated contacts.« less

  14. NMR studies of metallic tin confined within porous matrices

    SciTech Connect (OSTI)

    Charnaya, E. V.; Tien, Cheng; Lee, M. K.; Kumzerov, Yu. A.

    2007-04-01

    {sup 119}Sn NMR studies were carried out for metallic tin confined within synthetic opal and porous glass. Tin was embedded into nanoporous matrices in the melted state under pressure. The Knight shift for liquid confined tin was found to decrease with decreasing pore size. Correlations between NMR line shapes, Knight shift, and pore filling were observed. The melting and freezing phase transitions of tin under confinement were studied through temperature dependences of NMR signals upon warming and cooling. Melting of tin within the opal matrix agreed well with the liquid skin model suggested for small isolated particles. The influence of the pore filling on the melting process was shown.

  15. Woodgrain defect on tinned steel Flandres foil

    SciTech Connect (OSTI)

    Sarkis, A.M.; Robin, A. Souza, V.A.; Suzuki, P.A.

    2011-06-15

    Tin electrocoated steel strip, also referred to as Flandres foil, is largely used for manufacturing food containers. Tinplates must have good corrosion resistance, workability, weldability, as well as a bright appearance. The woodgrain defect, a not yet fully understood defect that occurs on tinplates and accounts for their high scrap rate, consists of alternate bands of bright/dull reflectivity and resembles longitudinally cut wood. Observations of the woodgrain defect by scanning electron microscopy showed that the molten tin spreads irregularly during both the melting and solidification stages. X-ray diffraction analyses showed that the metallic tin tended to crystallize in the (200) direction for coupons with and without the woodgrain defect. Nevertheless, the preferential orientation degree decreased for coupons with the woodgrain defect. The rocking curves, also known as omega-scan, showed that the tin grains were uniformly aligned parallel to the strip surface for coupons with no defects, whereas for tinplates with woodgrain, the tin grains were not uniformly oriented, probably due to the misalignment of the grains in relation to the surface. - Graphical abstract: The woodgrain defect occurs on Flandres tinplates and consists in the formation of alternate bands of different reflectivity (bright/dull), which looks like longitudinally cut wood. X-ray diffractometry showed that the typical bright surface of tinplate is associated to the uniform distribution of aligned (200) Sn grains, whereas in tinplate with the woodgrain defect, the Sn grains were not uniformly oriented, due to the misalignment of the (200) Sn planes relative to the surface. Research highlights: {yields} The bright surface of tinplate is associated to the uniform distribution of aligned (200) Sn grains. {yields} The woodgrain defect on tinplate consists in alternate bands of bright/dull appearance. {yields} In tinplate with the woodgrain defect, the Sn grains were not uniformly oriented, due

  16. Indium Phosphide Polycrystalline Films on Metal Foil for PV Applications -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Innovation Portal Indium Phosphide Polycrystalline Films on Metal Foil for PV Applications Lawrence Berkeley National Laboratory Contact LBL About This Technology Publications: PDF Document Publication Zheng, M., Yu, Z., Seok, T.J., Chen, Y-Z., Kapadia, R., Takei, K., Aloni, S., Ager, J.W., Wu, M., Chueh, Y-L., Javey, A. "High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition," Journal of Applied Physics 111,

  17. Picture of the Week: Bismuth and tin on the rocks

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 Bismuth and tin on the rocks Scientists at Los Alamos National Laboratory are using state-of-the-art experimental techniques to see and understand how microstructures evolve during materials processing. February 15, 2016 Bismuth and tin on the rocks Scientists at Los Alamos National Laboratory are using state-of-the-art experimental techniques to see and understand how microstructures evolve during materials processing. Bismuth and tin on the rocks Scientists at Los Alamos National Laboratory

  18. Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films

    DOE Patents [OSTI]

    Giolando, Dean M.

    2003-09-30

    Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

  19. Nanocomposite Carbon/Tin Anodes for Lithium Ion Batteries - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanocomposite CarbonTin Anodes for Lithium Ion Batteries Lawrence Berkeley National ... Applications and Industries Anodes for lithium ion batteries More InformationFOR MORE ...

  20. Pioneer Materials Inc PMI | Open Energy Information

    Open Energy Info (EERE)

    California Zip: 90505 Product: US-based manufacturer of non-silicon feedstock material for thin-film PV products such as zinc-oxide and indium-tin-oxide. Coordinates:...

  1. Equation of state of liquid Indium under high pressure

    SciTech Connect (OSTI)

    Li, Huaming E-mail: mo.li@gatech.edu; Li, Mo E-mail: mo.li@gatech.edu; Sun, Yongli

    2015-09-15

    We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

  2. Molten tin reprocessing of spent nuclear fuel elements

    DOE Patents [OSTI]

    Heckman, Richard A.

    1983-01-01

    A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support the liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

  3. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOE Patents [OSTI]

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  4. Interim Results from a Study of the Impacts of Tin (II) Based Mercury Treatment in a Small Stream Ecosystem: Tims Branch, Savannah River Site

    SciTech Connect (OSTI)

    Looney, Brian; BryanJr., Larry; Mathews, Teresa J; Peterson, Mark J; Roy, W Kelly; Jett, Robert T; Smith, John G

    2012-03-01

    A research team is assessing the impacts of an innovative mercury treatment system in Tims Branch, a small southeastern stream. The treatment system, installed in 2007, reduces and removes inorganic mercury from water using tin(II) (stannous) chloride addition followed by air stripping. The system results in discharge of inorganic tin to the ecosystem. This screening study is based on historical information combined with measurements of contaminant concentrations in water, fish, sediment, biofilms and invertebrates. Initial mercury data indicate that first few years of mercury treatment resulted in a significant decrease in mercury concentration in an upper trophic level fish, redfin pickerel, at all sampling locations in the impacted reach. For example, the whole body mercury concentration in redfin pickerel collected from the most impacted pond decreased approximately 72% between 2006 (pre-treatment) and 2010 (post-treatment). Over this same period, mercury concentrations in the fillet of redfin pickerel in this pond were estimated to have decreased from approximately 1.45 {micro}g/g (wet weight basis) to 0.45 {micro}g/g - a decrease from 4.8x to 1.5x the current EPA guideline concentration for mercury in fillet (0.3 {micro}g/g). Thermodynamic modeling, scanning electron microscopy, and other sampling data for tin suggest that particulate tin (IV) oxides are a significant geochemical species entering the ecosystem with elevated levels of tin measured in surficial sediments and biofilms. Detectable increases in tin in sediments and biofilms extended approximately 3km from the discharge location. Tin oxides are recalcitrant solids that are relatively non-toxic and resistant to dissolution. Work continues to develop and validate methods to analyze total tin in the collected biota samples. In general, the interim results of this screening study suggest that the treatment process has performed as predicted and that the concentration of mercury in upper trophic level

  5. Tin-silver-bismuth solders for electronics assembly

    DOE Patents [OSTI]

    Vianco, P.T.; Rejent, J.A.

    1995-08-08

    A lead-free solder alloy is disclosed for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218 C down to about 205 C depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10 C/min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight). 4 figs.

  6. Tin-silver-bismuth solders for electronics assembly

    DOE Patents [OSTI]

    Vianco, Paul T.; Rejent, Jerome A.

    1995-01-01

    A lead-free solder alloy for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218.degree. C. down to about 205.degree. C. depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10.degree. C./min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight).

  7. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  8. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

  9. Method for enhancing the solubility of boron and indium in silicon

    DOE Patents [OSTI]

    Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2002-01-01

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  10. Investigation of Surface Phenomena in Shocked Tin in Converging Geometry

    SciTech Connect (OSTI)

    Rousculp, Christopher L.; Oro, David Michael; Margolin, Len G.; Griego, Jeffrey Randall; Reinovsky, Robert Emil; Turchi, Peter John

    2015-08-06

    There is great interest in the behavior of the free surface of tin under shock loading. While it is known that meso-scale surface imperfections can seed the Richtmyer-Meshkov Instability (RMI) for a surface that is melted on release, much less is known about a tin surface that is solid, but plastically deforming. Here material properties such as shear and yield strength come into play especially in converging geometry. Previous experiments have been driven by direct contact HE. Usually a thin, flat target coupon is fielded with various single-mode, sinusoidal, machined, profiles on the free surface. The free surface is adjacent to either vacuum or an inert receiver gas. Most of these previous driver/target configurations have been nominal planer geometry. With modern HE it has been straightforward to shock tin into melt on release. However it has been challenging to achieve a low enough pressure for solid state on release. Here we propose to extend the existing base of knowledge to include the behavior of the free surface of tin in cylindrical converging geometry. By shock loading a cylindrical tin shell with a magnetically driven cylindrical liner impactor, the free surface evolution can be diagnosed with proton radiography. With the PHELIX capacitor bank, the drive can easily be varied to span the pressure range to achieve solid, mixed, and liquid states on release.

  11. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2000-01-01

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  12. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    SciTech Connect (OSTI)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A.

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  13. Shock-ramp loading of tin and aluminum. (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Shock-ramp loading of tin and aluminum. Citation Details In-Document Search Title: Shock-ramp loading of tin and aluminum. Abstract not provided. Authors: Seagle, Christopher T ...

  14. Reductive precipitation of metals photosensitized by tin and antimony porphyrins

    DOE Patents [OSTI]

    Shelnutt, John A.; Gong, Weiliang; Abdelouas, Abdesselam; Lutze, Werner

    2003-09-30

    A method for reducing metals using a tin or antimony porphyrin by forming an aqueous solution of a tin or antimony porphyrin, an electron donor, such as ethylenediaminetetraaceticacid, triethylamine, triethanolamine, and sodium nitrite, and at least one metal compound selected from a uranium-containing compound, a mercury-containing compound, a copper-containing compound, a lead-containing compound, a gold-containing compound, a silver-containing compound, and a platinum-containing compound through irradiating the aqueous solution with light.

  15. Consolidation of tin sulfide chalcogels and xerogels with and without adsorbed iodine

    SciTech Connect (OSTI)

    Riley, Brian J.; Pierce, David A.; Lepry, William C.; Kroll, Jared O.; Chun, Jaehun; Subrahmanyam, Kota S.; Kanatzidis, Mercouri G.; Alblouwy, Fares K.; Bulbule, Aneeruddha; Sabolsky, Edward

    2015-11-18

    Tin sulfide (Sn2S3) chalcogels are one of the most effective non-oxide aerogels evaluated to date for iodine gas capture. This is attributed to the fact that the Sn within the gel network has a strong affinity for chemisorption of iodine to form SnI4. This study demonstrates an approach for consolidating the raw and iodine-sorbed Sn2S3 chalcogels into a chalcogenide glass using GeS2 as a glass forming additive. The system with both iodine-sorbed and iodine-free Sn2S3 chalcogels provides better glass-forming characteristics than Sn-S or Sn-S-I alone, and the quantity of iodine measured in the bulk glass of the consolidated iodine-sorbed Sn2S3 chalcogel was at ~45 mass%. Additional experiments were also conducted using microwave sintering and hot isostatic pressing with Sn2S3 xerogels.

  16. Multifunctional Platelet Composites for Tin Whisker Mitigation - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Multifunctional Platelet Composites for Tin Whisker Mitigation Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (555 KB) <br type="_moz" /> SEM image showing in-plane orientation of platelets in Sandia&#39;s multifunctional platelet composite SEM image showing in-plane orientation of platelets in Sandia's multifunctional platelet composite Technology Marketing Summary In order to comply

  17. Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

    SciTech Connect (OSTI)

    Zhernokletov, D. M.; Laukkanen, P.; Dong, H.; Brennan, B.; Kim, J.; Galatage, R. V.; Yakimov, M.; Tokranov, V.; Oktyabrsky, S.; Wallace, R. M.; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080

    2013-05-27

    A crystalline oxide film on InAs(100) is investigated with in situ monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction before and after in situ deposition of Al{sub 2}O{sub 3} by atomic layer deposition (ALD) as well as upon air exposure. The oxidation process leads to arsenic and indium trivalent oxidation state formation. The grown epitaxial oxide-InAs interface is stable upon ALD reactor exposure; however, trimethyl aluminum decreases oxidation states resulting in an unreconstructed surface. An increase in oxide concentration is also observed upon air exposure suggesting the crystalline oxide surface is unstable.

  18. Hydrogenation of palladium rich compounds of aluminium, gallium and indium

    SciTech Connect (OSTI)

    Kohlmann, H.

    2010-02-15

    Palladium rich intermetallic compounds of aluminium, gallium and indium have been studied before and after hydrogenation by powder X-ray diffraction and during hydrogenation by in situ thermal analysis (DSC) at hydrogen gas pressures up to 39 MPa and temperatures up to 700 K. Very weak DSC signals and small unit cell increases of below 1% for AlPd{sub 2}, AlPd{sub 3}, GaPd{sub 2}, Ga{sub 5}Pd{sub 13}, In{sub 3}Pd{sub 5}, and InPd{sub 2} suggest negligible hydrogen uptake. In contrast, for both tetragonal modifications of InPd{sub 3} (ZrAl{sub 3} and TiAl{sub 3} type), heating to 523 K at 2 MPa hydrogen pressure leads to a rearrangement of the intermetallic structure to a cubic AuCu{sub 3} type with an increase in unit cell volume per formula unit by 3.6-3.9%. Gravimetric analysis suggests a composition InPd{sub 3}H{sub a}pprox{sub 0.8} for the hydrogenation product. Very similar behaviour is found for the deuteration of InPd{sub 3}. - Graphical abstract: In situ differential scanning calorimetry of the hydrogenation of tetragonal InPd{sub 3} (ZrAl{sub 3} type) at 1.3 MPa hydrogen pressure.

  19. Coating power RF components with TiN

    SciTech Connect (OSTI)

    Kuchnir, M.; Hahn, E.

    1995-03-01

    A facility for coating RF power components with thin films of Ti and/or TiN has been in operation for some time at Fermilab supporting the Accelerator Division RF development work and the TESLA program. It has been experimentally verified that such coatings improve the performance of these components as far as withstanding higher electric fields. This is attributed to a reduction in the secondary electron emission coefficient of the surfaces when coated with a thin film containing titanium. The purpose of this Technical Memorandum is to describe the facility and the procedure used.

  20. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  1. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  2. Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery

    DOE Patents [OSTI]

    Neudecker, Bernd J.; Bates, John B.

    2001-01-01

    Disclosed are silicon-tin oxynitride glassy compositions which are especially useful in the construction of anode material for thin-film electrochemical devices including rechargeable lithium-ion batteries, electrochromic mirrors, electrochromic windows, and actuators. Additional applications of silicon-tin oxynitride glassy compositions include optical fibers and optical waveguides.

  3. Couplings between dipole and quadrupole vibrations in tin isotopes

    SciTech Connect (OSTI)

    Simenel, C.; Chomaz, Ph.

    2009-12-15

    We study the couplings between collective vibrations such as the isovector giant dipole and isoscalar giant quadrupole resonances in tin isotopes in the framework of the time-dependent Hartree-Fock theory with a Skyrme energy density functional. These couplings are a source of anharmonicity in the multiphonon spectrum. In particular, the residual interaction is known to couple the isovector giant dipole resonance with the isoscalar giant quadrupole resonance built on top of it, inducing a nonlinear evolution of the quadrupole moment after a dipole boost. This coupling also affects the dipole motion in a nucleus with a static or dynamical deformation induced by a quadrupole constraint or boost, respectively. Three methods associated with these different manifestations of the coupling are proposed to extract the corresponding matrix elements of the residual interaction. Numerical applications of the different methods to {sup 132}Sn are in good agreement with each other. Finally, several tin isotopes are considered to investigate the role of isospin and mass number on this coupling. A simple 1/A dependence of the residual matrix elements is found with no noticeable contribution from the isospin. This result is interpreted within the Goldhaber-Teller model.

  4. Molten tin reprocessing of spent nuclear fuel elements. [Patent application; continuous process

    DOE Patents [OSTI]

    Heckman, R.A.

    1980-12-19

    A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support te liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

  5. Germanium Oxide Nanoparticlesfor Superior Battery Electrodes - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Advanced Materials Advanced Materials Find More Like This Return to Search Germanium Oxide Nanoparticlesfor Superior Battery Electrodes Brookhaven National Laboratory Contact BNL About This Technology Technology Marketing Summary Compared to the graphite found in some batteries, similar elements such as tin, silicon, and germanium have much higher theoretical capacities for lithium ions, making them strong candidates for electrode materials. These new amorphous germanium

  6. Vapor phase tri-methyl-indium seeding system suitable for high temperature spectroscopy and thermometry

    SciTech Connect (OSTI)

    Whiddon, R.; Zhou, B.; Borggren, J.; Aldén, M.; Li, Z. S.

    2015-09-15

    Tri-methyl-indium (TMI) is used as an indium transport molecule to introduce indium atoms to reactive hot gas flows/combustion environments for spectroscopic diagnostics. A seeding system was constructed to allow the addition of an inert TMI laden carrier gas into an air/fuel mixture burning consequently on a burner. The amount of the seeded TMI in the carrier gas can be readily varied by controlling the vapor pressure through the temperature of the container. The seeding process was calibrated using the fluorescent emission intensity from the indium 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 1/2} and 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 3/2} transitions as a function of the calculated TMI seeding concentration over a range of 2–45 ppm. The response was found to be linear over the range 3–22.5 ppm; at concentrations above 25 ppm there is a loss of linearity attributable to self-absorption or loss of saturation of TMI vapor pressure in the carrier gas flow. When TMI was introduced into a post-combustion environment via an inert carrier gas, molecular transition from InH and InOH radicals were observed in the flame emission spectrum. Combined laser-induced fluorescence and absorption spectroscopy were applied to detect indium atoms in the TMI seeded flame and the measured atomic indium concentration was found to be at the ppm level. This method of seeding organometallic vapor like TMI to a reactive gas flow demonstrates the feasibility for quantitative spectroscopic investigations that may be applicable in various fields, e.g., chemical vapor deposition applications or temperature measurement in flames with two-line atomic fluorescence.

  7. Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

    SciTech Connect (OSTI)

    Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

    2011-04-15

    In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

  8. Environmental stability of high-mobility indium-oxide based transparent electrodes

    SciTech Connect (OSTI)

    Tohsophon, Thanaporn; Dabirian, Ali; De Wolf, Stefaan; Morales-Masis, Monica Ballif, Christophe

    2015-11-01

    Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In{sub 2}O{sub 3} (ITO), H-doped In{sub 2}O{sub 3} (IO:H), and Zn-doped In{sub 2}O{sub 3} (IZO) electrodes under damp heat (DH) conditions (85 °C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (R{sub s}) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% R{sub s} degradation, due to losses in electron Hall mobility (μ{sub Hall}). We propose that this degradation results from chemisorbed OH- or H{sub 2}O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μ{sub Hall} strongly degrades during DH, the optical mobility (μ{sub optical}) remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

  9. Mitigation of Sulfur Poisoning of Ni/Zirconia SOFC Anodes by Antimony and Tin

    SciTech Connect (OSTI)

    Marina, Olga A.; Coyle, Christopher A.; Engelhard, Mark H.; Pederson, Larry R.

    2011-02-28

    Surface Ni/Sb and Ni/Sb alloys were found to efficiently minimize the negative effects of sulfur on the performance of Ni/zirconia anode-supported solid oxide fuel cells (SOFC). Prior to operating on fuel gas containing low concentrations of H2S, the nickel/zirconia anodes were briefly exposed to antimony or tin vapor, which only slightly affected the SOFC performance. During the subsequent exposures to 1 and 5 ppm H2S, increases in anodic polarization losses were minimal compared to those observed for the standard nickel/zirconia anodes. Post-test XPS analyses showed that Sb and Sn tended to segregate to the surface of Ni particles, and further confirmed a significant reduction of adsorbed sulfur on the Ni surface in Ni/Sn and Ni/Sb samples compared to the Ni. The effect may be the result of weaker sulfur adsorption on bimetallic surfaces, adsorption site competition between sulfur and Sb or Sn on Ni, or other factors. The use of dilute binary alloys of Ni-Sb or Ni-Sn in the place of Ni, or brief exposure to Sb or Sn vapor, may be effective means to counteract the effects of sulfur poisoning in SOFC anodes and Ni catalysts. Other advantages, including suppression of coking or tailoring the anode composition for the internal reforming, are also expected.

  10. Spectroscopic properties of colloidal indium phosphide quantum wires

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Wang, Fudong; Yu, Heng; Li, Jingbo; Hang, Qingling; Zemlyanov, Dmitry; Gibbons, Patrick C.; Wang, Lin-Wang; Janes, David B.; Buhro, William E.

    2008-07-11

    Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photo-oxidation, without a significant influence on quantum-wire photoluminescence. However, photo-oxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation, and that colloidal quantum wires have intrinsically low photoluminescence efficiencies.

  11. Time-resolved photoluminescence of ytterbium in indium phosphide. Master's thesis

    SciTech Connect (OSTI)

    Bumgarner, T.F.

    1988-12-01

    Time-resolved photoluminescence of ytterbium (Yb) implanted in indium phosphide (Inp) was the primary emphasis of this research. The decay lifetimes of the 1002-nm Yb emission were investigated as a function of temperature. Initial attempts were made to investigate as a function of temperature. Initial attempts were made to investigate aluminum gallium arsenide (AlGaAs) implanted with ytterbium.

  12. Liquid precursor for deposition of indium selenide and method of preparing the same

    SciTech Connect (OSTI)

    Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

    2015-09-22

    Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

  13. Copper-tin Electrodes Improve Capacity and Cycle Life for Lithium Batteries

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    - Energy Innovation Portal Energy Storage Energy Storage Advanced Materials Advanced Materials Find More Like This Return to Search Copper-tin Electrodes Improve Capacity and Cycle Life for Lithium Batteries Argonne National Laboratory Contact ANL About This Technology TEM and XRD of a Copper-Tin Material Used in Li Batteries (left), and cycling performance (right)<br /> <br type="_moz" /> TEM and XRD of a Copper-Tin Material Used in Li Batteries (left), and cycling

  14. In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

    SciTech Connect (OSTI)

    Dong, H.; KC, Santosh; Azcatl, A.; Cabrera, W.; Qin, X.; Brennan, B.; Cho, K.; Wallace, R. M.; Zhernokletov, D.

    2013-11-28

    The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.

  15. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

    SciTech Connect (OSTI)

    Wang, Wei; Li, Lingzi; Yeo, Yee-Chia; Tok, Eng Soon

    2015-06-14

    This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge{sub 0.83}Sn{sub 0.17}-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge{sub 0.83}Sn{sub 0.17}) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge{sub 0.83}Sn{sub 0.17} during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge{sub 0.83}Sn{sub 0.17} layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal ?100? azimuths are formed. The formation of the Sn wires is related to the annealing temperature and the Ge{sub 0.83}Sn{sub 0.17} thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (E{sub c}) of 0.41?eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to cellular precipitation. This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.

  16. Testing our solution: Setting up a lab for Tin Whiskers CRADA...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CRADA Posted: December 17, 2015 - 4:39pm Y-12's Rusty Hallman (right) and Dennis Miller (center) discuss Y-12's tin-whisker-mitigation technology with Michael Dunn and Bret...

  17. High Pressure Melting Curve of TIn (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    High Pressure Melting Curve of TIn Citation Details ... OSTI Identifier: 1124823 Report Number(s): LLNL-JRNL-522418 DOE Contract Number: W-7405-ENG-48 Resource Type: Journal ...

  18. New agreement for Y-12, novel approach to solve tin-whiskers...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New agreement for Y-12, ... New agreement for Y-12, novel approach to solve tin-whiskers dilemma Posted: August 6, 2015 - 11:12am Y-12's Rusty Hallman (right) and Dennis Miller ...

  19. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect (OSTI)

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (24?nm in size) in the amorphous matrix of Si{sub 1?x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300?C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1?x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ?80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  20. TEM in situ lithiation of tin nanoneedles for battery applications

    SciTech Connect (OSTI)

    Janish, Matthew T.; Mackay, David T.; Liu, Yang; Jungjohann, Katherine L.; Carter, C. Barry; Norton, M. Grant

    2015-08-12

    Materials such as tin (Sn) and silicon that alloy with lithium (Li) have attracted renewed interest as anode materials in Li-ion batteries. Although their superior capacity to graphite and other intercalation materials has been known for decades, their mechanical instability due to extreme volume changes during cycling has traditionally limited their commercial viability. This limitation is changing as processes emerge that produce nanostructured electrodes. The nanostructures can accommodate the repeated expansion and contraction as Li is inserted and removed without failing mechanically. Recently, one such nano-manufacturing process, which is capable of depositing coatings of Sn “nanoneedles” at low temperature with no template and at industrial scales, has been described. The present work is concerned with observations of the lithiation and delithiation behavior of these Sn nanoneedles during in situ experiments in the transmission electron microscope, along with a brief review of how in situ TEM experiments have been used to study the lithiation of Li-alloying materials. Individual needles are successfully lithiated and delithiated in solid-state half-cells against a Li-metal counter-electrode. Furthermore the microstructural evolution of the needles is discussed, including the transformation of one needle from single-crystal Sn to polycrystalline Sn–Li and back to single-crystal Sn.

  1. Search for technetium in natural tin metallurgical residues

    SciTech Connect (OSTI)

    Parker, C.W.

    1996-07-01

    Possible instability of baryons inside the nuclei might result in accumulation of rare isotopes in natural ores. In this respect, isotopes of technetium have certain advantages that can be useful in the search for technetium in nonradioactive ores by chemical methods. In this paper, we review the history of technetium research and discuss a new approach to the search for natural technetium associated with tin ores which appears to offer a rare possibility of discovering a smelting operation by-product such as flue dust, in which the volatile technetium heptoxide (Tc{sub 2}O{sub 7}), like rhenium heptoxide (Re{sub 2}O{sub 7}), would be expected to concentrate. Our concept of a search for technetium in these materials would be based on the assumption that traces of rhenium could occur in the ore and could be traced most easily by neutron activation of small samples. Such a procedure would confirm that an enrichment from the ore to the flue dust actually occurs with the rhenium and therefore should occur with technetium. Furthermore, this occurrence should identify the best location to search for technetium.

  2. TEM in situ lithiation of tin nanoneedles for battery applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Janish, Matthew T.; Mackay, David T.; Liu, Yang; Jungjohann, Katherine L.; Carter, C. Barry; Norton, M. Grant

    2015-08-12

    Materials such as tin (Sn) and silicon that alloy with lithium (Li) have attracted renewed interest as anode materials in Li-ion batteries. Although their superior capacity to graphite and other intercalation materials has been known for decades, their mechanical instability due to extreme volume changes during cycling has traditionally limited their commercial viability. This limitation is changing as processes emerge that produce nanostructured electrodes. The nanostructures can accommodate the repeated expansion and contraction as Li is inserted and removed without failing mechanically. Recently, one such nano-manufacturing process, which is capable of depositing coatings of Sn “nanoneedles” at low temperature withmore » no template and at industrial scales, has been described. The present work is concerned with observations of the lithiation and delithiation behavior of these Sn nanoneedles during in situ experiments in the transmission electron microscope, along with a brief review of how in situ TEM experiments have been used to study the lithiation of Li-alloying materials. Individual needles are successfully lithiated and delithiated in solid-state half-cells against a Li-metal counter-electrode. Furthermore the microstructural evolution of the needles is discussed, including the transformation of one needle from single-crystal Sn to polycrystalline Sn–Li and back to single-crystal Sn.« less

  3. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    SciTech Connect (OSTI)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

  4. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  5. Temperature sensibility of the birefringence properties in side-hole photonic crystal fiber filled with Indium

    SciTech Connect (OSTI)

    Reyes-Vera, Erick Gmez-Cardona, Nelson D.; Chesini, Giancarlo; Cordeiro, Cristiano M. B.; Torres, Pedro

    2014-11-17

    We report on the temperature sensitivity of the birefringence properties of a special kind of photonic crystal fiber containing two side holes filled with Indium metal. The modulation of the fiber birefringence is accomplished through the stress field induced by the expansion of the metal. Although the fiber was made at low gas pressures during the indium infiltration process, the birefringence showed anomalous property at a relatively low temperature value, which is completely different from those reported in conventional-like fibers with two holes filled with metal. By modeling the anisotropic changes induced by the metal expansion to the refractive index within the fiber, we are able to reproduce the experimental results. Our results have practical relevance for the design of devices based on this technology.

  6. High-performance, transparent conducting oxides based on cadmium stannate

    SciTech Connect (OSTI)

    Coutts, T.J.; Wu, X.; Mulligan, W.P.; Webb, J.M.

    1996-06-01

    We discuss the modeling of thin films of transparent conducting oxides and we compare the predictions with the observed properties of cadmium stannate. Thin films of this material were deposited using radio-frequency magnetron sputtering. The Drude free-carrier model is used to model the optical and electrical properties. The model demonstrates the need for high mobilities. The free-carrier absorbance in the visible spectrum is used as a comparative figure-of-merit for cadmium stannate and tin oxide. This shows that free-carrier absorbance is much less in cadmium stannate than in tin oxide. X-ray diffraction shows that annealed films consist of a single-phase spinel structure. The post-deposition annealing sequence is shown to be crucial to forming a single phase, which is vital for optimal optical and electrical properties. The films are typically high mobility (up to 65 cm{sup 2}V{sup -1}s{sup -1}) and have carrier concentrations as high as 10{sup 21} cm{sup -3}. Resistivities are as low as 1.3 10{sup -4} {Omega} cm, the lowest values reported for cadmium stannate. Atomic force microscopy indicates that the root-mean-square surface roughness is approximately {+-}15A. Cadmium stannate etches readily in both hydrofluoric and hydrochloric acid, which is a commanding advantage over tin oxide. 11 refs., 15 figs.

  7. Indium diffusion through high-k dielectrics in high-k/InP stacks

    SciTech Connect (OSTI)

    Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Galatage, R. V.; Zhernokletov, D.; Wallace, R. M.; Department of Physics, University of Texas at Dallas, Richardson, Texas 75080

    2013-08-05

    Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

  8. Basic properties of a liquidt in anode solid oxide fuel cell

    SciTech Connect (OSTI)

    Harry Abernathy; RandallGemmen; KirkGerdes; Mark Koslowske; ThomasTao

    2010-12-17

    An unconventional high temperature fuel cell system, the liquidt in anode solid oxide fuel cell(LTA-SOFC), is discussed. A thermodynamic analysis of a solid oxide fuel cell with a liquid metal anode is developed. Pertinent thermo chemical and thermo physical properties of liquid tin in particular are detailed. An experimental setup for analysis of LTA-SOFC anode kinetics is described, and data for a planar cell under hydrogen indicated an effective oxygen diffusion coefficient of 5.310?5 cm2 s?1 at 800 ?C and 8.910?5 cm2 s?1 at 900 ?C. This value is similar to previously reported literature values for liquid tin. The oxygen conductivity through the tin, calculated from measured diffusion coefficients and theoretical oxygen solubility limits, is found to be on the same order of thatofyttria-stabilizedzirconia(YSZ), a traditional SOFC electrolyte material. As such,the ohmicloss due to oxygen transport through the tin layer must be considered in practical system cell design since the tin layer will usually be at least as thick as the electrolyte.

  9. INTERIM RESULTS FROM A STUDY OF THE IMPACTS OF TIN(II) BASED MERCURY TREATMENT IN A SMALL STREAM ECOSYSTEM: TIMS BRANCH, SAVANNAH RIVER SITE

    SciTech Connect (OSTI)

    Looney, B.; Bryan, L.; Mathews, T.

    2012-03-30

    control measures have resulted in rapid responses in lake or reservoir fisheries (Joslin 1994, Turner and Southworth 1999; Orihel et al., 2007), but examples of similar responses in Hg-contaminated stream ecosystems are less common. Recent work suggests that stream systems may actually be more susceptible to mercury bioaccumulation than lakes, highlighting the need to better understand the ecological drivers of mercury bioaccumulation in stream-dwelling fish (Chasar et al. 2009, Ward et al. 2010). In the present study we examine the response of fish to remedial actions in Tims Branch, a point-source contaminated stream on the Department of Energy's (DOE) Savannah River Site in Aiken, South Carolina. This second order stream received inorganic mercury inputs at its headwaters from the 1950s-2000s which contaminated the water, sediments, and biota downstream. In 2007, an innovative mercury removal system using tin (II) chloride (stannous chloride, SnCl{sub 2}) was implemented at a pre-existing air stripper. Tin(II) reduces dissolved Hg (II) to Hg (0), which is removed by the air stripper. During this process, tin(II) is oxidized to tin (IV) which is expected to precipitate as colloidal tin(IV) oxides and hydroxides, particulate materials with relatively low toxicity (Hallas and Cooney, 1981, EPA 2002, ATSDR, 2005). The objectives of the present research are to provide an initial assessment of the net impacts of the tin(II) based mercury treatment on key biota and to document the distribution and fate of inorganic tin in this small stream ecosystem after the first several years of operating a full scale system. To support these objectives, we collected fish, sediment, water, invertebrates, and biofilm samples from Tims Branch to quantify the general behavior and accumulation patterns for mercury and tin in the ecosystem and to determine if the treatment process has resulted in: (1) a measurable beneficial impact on (i.e., decrease of) mercury concentration in upper trophic

  10. Release Path Temperatures of Shock-Compressed Tin from Dynamic Reflectance and Radiance Measurements

    SciTech Connect (OSTI)

    La Lone, B. M.; Stevens, G. D.; Turley, W. D.; Holtkamp, D. B.; Iverson, A. J.; Hixson, R. S.; Veeser, L. R.

    2013-08-01

    Dynamic reflectance and radiance measurements were conducted for tin samples shock compressed to 35 GPa and released to 15 GPa using high explosives. We determined the reflectance of the tin samples glued to lithium fluoride windows using an integrating sphere with an internal xenon flashlamp as an illumination source. The dynamic reflectance (R) was determined at near normal incidence in four spectral bands with coverage in visible and near-infrared spectra. Uncertainties in R/R0 are < 2%, and uncertainties in absolute reflectance are < 5%. In complementary experiments, thermal radiance from the tin/glue/lithium fluoride interface was recorded with similar shock stress and spectral coverage as the reflectance measurements. The two sets of experiments were combined to obtain the temperature history of the tin surface with an uncertainty of < 2%. The stress at the interface was determined from photonic Doppler velocimetry and combined with the temperatures to obtain temperature-stress release paths for tin. We discuss the relationship between the experimental release paths and release isentropes that begin on the principal shock Hugoniot.

  11. Release path temperatures of shock-compressed tin from dynamic reflectance and radiance measurements

    SciTech Connect (OSTI)

    La Lone, B. M. Stevens, G. D.; Turley, W. D.; Holtkamp, D. B.; Iverson, A. J.; Hixson, R. S.; Veeser, L. R.

    2013-08-14

    Dynamic reflectance and radiance measurements were conducted for tin samples shock compressed to 35 GPa and released to 15 GPa using high explosives. We determined the reflectance of the tin samples glued to lithium fluoride windows using an integrating sphere with an internal xenon flashlamp as an illumination source. The dynamic reflectance (R) was determined at near normal incidence in four spectral bands with coverage in visible and near-infrared spectra. Uncertainties in R/R{sub 0} are <2%, and uncertainties in absolute reflectance are <5%. In complementary experiments, thermal radiance from the tin/glue/lithium fluoride interface was recorded with similar shock stress and spectral coverage as the reflectance measurements. The two sets of experiments were combined to obtain the temperature history of the tin surface with an uncertainty of <2%. The stress at the interface was determined from photonic Doppler velocimetry and combined with the temperatures to obtain temperature-stress release paths for tin. We discuss the relationship between the experimental release paths and release isentropes that begin on the principal shock Hugoniot.

  12. Molecular beam epitaxy growth of SnO{sub 2} using a tin chemical precursor

    SciTech Connect (OSTI)

    Wang, Tianqi; Prakash, Abhinav; Jalan, Bharat; Warner, Ellis; Gladfelter, Wayne L.

    2015-03-15

    The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO{sub 2} films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO{sub 2} (101) films on r-sapphire (101{sup ¯}2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900 °C. Three distinct growth regimes were identified where SnO{sub 2} films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed.

  13. Tin-117m-labeled stannic (Sn.sup.4+) chelates

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Meinken, George E.; Richards, Powell

    1985-01-01

    The radiopharmaceutical reagents of this invention and the class of Tin-117m radiopharmaceuticals are therapeutic and diagnostic agents that incorporate gamma-emitting nuclides that localize in bone after intravenous injection in mammals (mice, rats, dogs, and rabbits). Images reflecting bone structure or function can then be obtained by a scintillation camera that detects the distribution of ionizing radiation emitted by the radioactive agent. Tin-117m-labeled chelates of stannic tin localize almost exclusively in cortical bone. Upon intravenous injection of the reagent, the preferred chelates are phosphonate compounds, preferable, PYP, MDP, EHDP, and DTPA. This class of reagents is therapeutically and diagnostically useful in skeletal scintigraphy and for the radiotherapy of bone tumors and other disorders.

  14. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    SciTech Connect (OSTI)

    Chen, Hong; Duan, Lian; Lan, Hui; Wang, Xinbing Chen, Ziqi; Zuo, Duluo; Lu, Peixiang

    2015-05-21

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer–Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data.

  15. Tin(II) alkoxide hydrolysis products for use as base catalysts

    DOE Patents [OSTI]

    Boyle, Timothy J.

    2002-01-01

    Tin alkoxide compounds are provided with accessible electrons. The compounds are a polymeric tin alkoxide, [Sn(OCH.sub.2 C(CH.sub.3).sub.3).sub.2 ].sub.n, and the hydrolysis products Sn.sub.6 O.sub.4 (OCH.sub.2 C(CH.sub.3).sub.3).sub.4 and Sn.sub.5 O.sub.2 (OCH.sub.2 C(CH.sub.3).sub.3).sub.6. The hydrolysis products are formed by hydrolyzing the [Sn(OCH.sub.2 C(CH.sub.3).sub.3).sub.2 ].sub.n in a solvent with controlled amounts of water, between 0.1 and 2 moles of water per mole of the polymeric tin alkoxide.

  16. State of the Art Power-in Tube Niobium-Tin Superconductors

    SciTech Connect (OSTI)

    Godeke, A.; Ouden, A. Den; Nijhuis, A.; ten Kate, H.H.J.

    2008-06-01

    Powder-in-Tube (PIT) processed Niobium-Tin wires are commercially manufactured for nearly three decades and have demonstrated a combination of very high current density (presently up to 2500 A mm{sup -2} non-Cu at 12 T and 4.2 K) with fine (35 {micro}m), well separated filaments. We review the developments that have led to the present state of the art PIT Niobium-Tin wires, discuss the wire manufacturing and A15 formation processes, and describe typical superconducting performance in relation to magnetic field and strain. We further highlight successful applications of PIT wires and conclude with an outlook on possibilities for further improvements in the performance of PIT Niobium-Tin wires.

  17. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  18. Tridentate ligated heteronuclear tin(II) alkoxides for use as base catalysts

    DOE Patents [OSTI]

    Boyle, Timothy J.

    2001-01-01

    Tin alkoxide compounds are provided with accessible electrons. The tin alkoxide compound have the general formula (THME).sub.2 Sn.sub.3 (M(L).sub.x).sub.y, where THME is (O--CH.sub.2).sub.3 C(CH.sub.3), M is a metal atom selected from Sn and Ti, L is an organic/inorganic ligand selected from an alkoxide, a phenoxide or an amide, x is selected from 2 and 4 and y is selected from 0 and 1. These compounds have applicability as base catalysts in reactions and in metal-organic chemical vapor depositions processes.

  19. Should muffin tin radius vary in different structures of a material?: A case study

    SciTech Connect (OSTI)

    Nayak, Vikas Banger, Suman Verma, U. P.

    2014-04-24

    Quantum mechanical calculations based on density functional theory and a generalized gradient approximation (GGA) have been used to study the structural properties of YbN. Its predicted unit cell lattice parameter in NaCl (B1) structure is 4.7810Å and in CsCl (B2) structure it is 2.8685Å. In the determination of lattice parameter the muffin tin radius (R{sub MT}) of constituent atoms play important role. In both the structures the muffin tin radius for Yb and N converges to 2.3 and 1.4 a.u., respectively.

  20. Alternating layers of plutonium and lead or indium as surrogate for plutonium

    SciTech Connect (OSTI)

    Rudin, Sven Peter

    2009-01-01

    Elemental plutonium (Pu) assumes more crystal structures than other elements, plausibly due to bonding f electrons becoming non-bonding. Complex geometries hamper understanding of the transition in Pu, but calculations predict this transition in a system with simpler geometry: alternating layers either of plutonium and lead or of plutonium and indium. Here the transition occurs via a pairing-up of atoms within Pu layers. Calculations stepping through this pairing-up reveal valuable details of the transition, for example that the transition from bonding to non-bonding proceeds smoothly.

  1. Real-time x-ray studies of indium island growth kinetics

    SciTech Connect (OSTI)

    Demasi, Alexander; Rainville, Meliha G.; Ludwig, Karl F.

    2015-03-15

    The authors have investigated the early stages of indium island formation and growth by vapor phase deposition on room temperature sapphire using real-time grazing incidence small angle x-ray scattering (GISAXS), followed by ex-situ atomic force microscopy and scanning electron microscopy. The results are consistent with the formation and coalescence of hemispherical islands, as described by Family and Meakin. Monte Carlo simulations of systems of coalescing islands were used to supplement and quantify the results of GISAXS, and a good agreement is seen between the data and the simulations.

  2. Waste reduction options for manufacturers of copper indium diselenide photovoltaic cells

    SciTech Connect (OSTI)

    DePhillips, M.P.; Fthenakis, V.M.; Moskowitz, P.D.

    1994-03-01

    This paper identifies general waste reduction concepts and specific waste reduction options to be used in the production of copper indium diselenide (CIS) photovoltaic cells. A general discussion of manufacturing processes used for the production of photovoltaic cells is followed by a description of the US Environmental Protection Agency (EPA) guidelines for waste reduction (i.e., waste minimization through pollution prevention). A more specific discussion of manufacturing CIS cells is accompanied by detailed suggestions regarding waste minimization options for both inputs and outputs for ten stages of this process. Waste reduction from inputs focuses on source reduction and process changes, and reduction from outputs focuses on material reuse and recycling.

  3. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, J.W.

    1992-09-15

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  4. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, James W.

    1992-01-01

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  5. Effect of indium and antimony doping in SnS single crystals

    SciTech Connect (OSTI)

    Chaki, Sunil H. Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  6. Infrared Emissivity of Tin upon Release of a 25 GPa Shock into a LiF Window

    SciTech Connect (OSTI)

    Turley, W. D., Holtkamp, D. B., Marshall, B. R., Stevens, G. D., Veeser, L. R.

    2011-11-01

    We measured the emissivity of a tin sample at its interface with a lithium-fluoride window upon release of a 25 GPa shock wave from the tin into the window. Measurements were made over four wavelength bands between 1.2 and 5.4 μm. Thermal emission backgrounds from the tin, glue, and lithium fluoride were successfully removed from the reflectance signals. Emissivity changes for the sample, which was initially nearly specular, were small except for the longest wavelength band, where uncertainties were high because of poor signal-to-noise ratio at that wavelength. A thin glue layer, which bonds the sample to the window, was found to heat from reverberations of the shock wave between the tin and the lithium fluoride. At approximately 3.4 μm the thermal emission from the glue was large compared to the tin, allowing a good estimate of the glue temperature from the thermal radiance. The glue appears to remain slightly colder than the tin, thereby minimizing heat conduction into or out of the tin immediately after the shock passage.

  7. Transparent Conductive Nano-Composites - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search Transparent Conductive Nano-Composites Nanomaterials for Applications Ranging From Photovoltaic Cells to Display Technologies Oak Ridge National Laboratory Contact ORNL About This Technology Technology Marketing Summary Indium Tin Oxide, the most widely used commercial transparent conducting coating, has severe limitations such

  8. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V.; Zhuikov, Boris L.; Srivastava, Suresh C.; Ermolaev, Stanislav V.; Togaeva, Natalia R.

    2012-01-17

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  9. Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

    SciTech Connect (OSTI)

    Jain, R.K.; Flood, D.J.

    1990-12-01

    Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greater than 16 percent AMO) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AMO efficiency at 25 C.

  10. The Dependence of the Oxidation Enhancement of InP(100) Surface on the Coverage of the Adsorbed Cs

    SciTech Connect (OSTI)

    Sun, Yun

    2010-06-07

    We report the oxidation of the InP(100) surface promoted by adsorbed Cs by synchrotron radiation photoemission. Oxygen exposure causes reduction of the charge transferred to the InP substrate from Cs and the growth of indium oxide and phosphorous oxide. The oxide growth displays a clear dependence on the Cs coverage. The oxidation of phosphorous is negligible up to 1000 L of O{sub 2} exposure when the Cs coverage is less than half a monolayer (ML), but the formation of the second half monolayer of Cs greatly accelerates the oxidation. This different enhancement of the InP oxidation by the first and the second half monolayer of Cs is due to the double layer structure of the adsorbed Cs atoms, and consequently the higher 6s electron density in the Cs atoms when Cs coverage is larger than 0.5 ML.

  11. Characterization of SAES St198 zirconium-iron-tin alloy

    SciTech Connect (OSTI)

    Mosley, W.C.

    1992-10-13

    A waste minimization program to develop a non-oxidative stripper system based on metallic getters is being conducted. Initial development is being performed using a Zr-Fe-Sn intermetallic alloy getter procured as Stl98 from SAES Gefters/USA., Inc. This memorandum describes characterizations of physical and compositional properties of SAES Stl98. SAES Stl98 getter was supplied as very durable, cylindrical pellets made by compaction of. granules of Zr-Fe-Sn alloy up to 150 {mu}m in size. Pellet density was 5.2 g/mL corresponding to 24.8% open porosity and very little closed porosity. Bulk composition of Stl98 was 73.6 weight percent (w/o) Zr, 23.3 w/o Fe and 1.2 w/o Sn. Stl98 consists of Zr{sub 2}Fe primary phase along with four secondary phases (ZrFe{sub 2}, Zr{sub 5}FeSn, {alpha}-zirconium, and {eta}-Zr{sub 4}Fe{sub 2}O{sub 0.6}). Hydriding characteristics of Stl98 are expected to differ slightly from those of Zr{sub 2}Fe because {alpha}-zirconium and, possibly, Zr{sub 5}FeSn also react with hydrogen.

  12. Characterization of SAES St198 zirconium-iron-tin alloy

    SciTech Connect (OSTI)

    Mosley, W.C.

    1992-10-13

    A waste minimization program to develop a non-oxidative stripper system based on metallic getters is being conducted. Initial development is being performed using a Zr-Fe-Sn intermetallic alloy getter procured as Stl98 from SAES Gefters/USA., Inc. This memorandum describes characterizations of physical and compositional properties of SAES Stl98. SAES Stl98 getter was supplied as very durable, cylindrical pellets made by compaction of. granules of Zr-Fe-Sn alloy up to 150 [mu]m in size. Pellet density was 5.2 g/mL corresponding to 24.8% open porosity and very little closed porosity. Bulk composition of Stl98 was 73.6 weight percent (w/o) Zr, 23.3 w/o Fe and 1.2 w/o Sn. Stl98 consists of Zr[sub 2]Fe primary phase along with four secondary phases (ZrFe[sub 2], Zr[sub 5]FeSn, [alpha]-zirconium, and [eta]-Zr[sub 4]Fe[sub 2]O[sub 0.6]). Hydriding characteristics of Stl98 are expected to differ slightly from those of Zr[sub 2]Fe because [alpha]-zirconium and, possibly, Zr[sub 5]FeSn also react with hydrogen.

  13. Process for light-driven hydrocarbon oxidation at ambient temperatures

    DOE Patents [OSTI]

    Shelnutt, John A.

    1990-01-01

    A photochemical reaction for the oxidation of hydrocarbons uses molecular oxygen as the oxidant. A reductive photoredox cycle that uses a tin(IV)- or antimony(V)-porphyrin photosensitizer generates the reducing equivalents required to activate oxygen. This artificial photosynthesis system drives a catalytic cycle, which mimics the cytochrome P.sub.450 reaction, to oxidize hydrocarbons. An iron(III)- or manganese(III)-porphyrin is used as the hydrocarbon-oxidation catalyst. Methylviologen can be used as a redox relay molecule to provide for electron-transfer from the reduced photosensitizer to the Fe or Mn porphyrin. The system is long-lived and may be used in photo-initiated spectroscopic studies of the reaction to determine reaction rates and intermediates.

  14. Design and fabrication of a traveling-wave muffin-tin accelerating structure at 90 GHz

    SciTech Connect (OSTI)

    Chou, P.J.; Bowden, G.B.; Copeland, M.R.; Menegat, A.; Siemann, R.H.; Henke, H.

    1997-05-01

    A prototype of a muffin-tin accelerating structure operating at 32 times the SLAC frequency (2.856 GHz) was built for research in high gradient acceleration. A traveling-wave design with single input and output feeds was chosen for the prototype which was fabricated by wire electrodischarge machining. Features of the mechanical design for the prototype are described. Design improvements are presented including considerations of cooling and vacuum.

  15. Indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs stacks during anneal at different ambient conditions

    SciTech Connect (OSTI)

    Krylov, Igor; Winter, Roy; Ritter, Dan; Eizenberg, Moshe

    2014-06-16

    Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al{sub 2}O{sub 3} layer following vacuum and O{sub 2} anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al{sub 2}O{sub 3}/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

  16. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

    SciTech Connect (OSTI)

    Kyle, Erin C. H. Kaun, Stephen W.; Young, Erin C.; Speck, James S.

    2015-06-01

    We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

  17. Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

    SciTech Connect (OSTI)

    Abdinov, A. Sh.; Babayeva, R. F.; Amirova, S. I.; Rzayev, R. M.

    2013-08-15

    In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

  18. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Hasoon, Falah S.; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  19. Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

    SciTech Connect (OSTI)

    Nichau, A.; Schnee, M.; Schubert, J.; Bernardy, P.; Hollaender, B.; Buca, D.; Mantl, S.; Besmehn, A.; Breuer, U.; Rubio-Zuazo, J.; Castro, G. R.; Muecklich, A.; Borany, J. von

    2013-04-21

    Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu-O bonds, whereby the diffusion of La was found to be less important.

  20. TiN coated aluminum electrodes for DC high voltage electron guns

    SciTech Connect (OSTI)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-15

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  1. TiN coated aluminum electrodes for DC high voltage electron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

  2. TiN coated aluminum electrodes for DC high voltage electron guns

    SciTech Connect (OSTI)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  3. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    SciTech Connect (OSTI)

    Tanta, R.; Krogstrup, P.; Nygård, J.; Jespersen, T. S.; Madsen, M. H.; Liao, Z.; Vosch, T.

    2015-12-14

    The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  4. LABORATORY REPORT ON THE REDUCTION AND STABILIZATION (IMMOBILIZATION) OF PERTECHNETATE TO TECHNETIUM DIOXIDE USING TIN(II)APATITE

    SciTech Connect (OSTI)

    DUNCAN JB; HAGERTY K; MOORE WP; RHODES RN; JOHNSON JM; MOORE RC

    2012-06-01

    This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-105 simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mo bile +7 state under acidic or oxygenated conditions within the tested period oftime (6 weeks). Previous work (RPP-RPT-39195, Assessment of Technetium Leachability in Cement-Stabilized Basin 43 Groundwater Brine) indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table A shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit. The loaded sample (200 mg of Sn(II)apatite loaded with O.311 mg of Tc-99) was subjected to different molarities of nitric acid to determine if the Sn(II)apatite would release the sequestered technetium. The acid was allowed to contact for 1 minute with gentle shaking ('1st wash'); the aqueous solution was then filtered, and the filtrate was analyzed for Tc-99. Table B shows the results ofthe nitric acid exposure. Another portion of acid was added, shaken for a minute, and filtered ('2nd wash'). The technetium-loaded Sn

  5. Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates

    SciTech Connect (OSTI)

    Sousa, Romulo R. M. de; Sato, Patricia S.; Nascente, Pedro A. P.; Viana, Bartolomeu C.; Alves, Clodomiro; Nishimoto, Akio

    2015-07-15

    Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical, structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.

  6. Tin dioxide-based ceramics as inert anodes for aluminum smelting: A laboratory study

    SciTech Connect (OSTI)

    Vecchio-Sadus, A.M.; Constable, D.C.; Dorin, R.; Frazer, E.J.; Fernandez, I.; Neal, G.S.; Lathabai, S.; Trigg, M.B.

    1996-10-01

    The behavior of tin dioxide-based ceramics as inert anodes was examined in a laboratory-scale aluminum smelting cell over a range of electrolyte compositions with operating temperatures between 830--975 C. Anodes of a nominal composition SnO{sub 2} (96 wt%), Sb{sub 2}O{sub 3} (2 wt%) and CuO (2 wt%), were electrolyzed for 90 min at a current density of {approximately}1 A cm{sup {minus}2}. The corrosion rate was determined from the tin and copper concentrations in the recovered electrolyte, aluminum metal and the fume. The corrosion rates were 12.5, 1.6 and 6.5 mg (Ah){sup {minus}1} in electrolytes with bath ratios 1.5 (975 C), 0.89 (903 C) and 0.74 (830 C), respectively. A four-fold increase in corrosion rate was obtained at open-circuit demonstrating the protection provided by oxygen evolution during electrolysis. A preliminary investigation of the dependence of corrosion rate on firing temperatures and additive (Sb{sub 2}O{sub 3} and CuO) concentrations was conducted using a part-factorial design experiment. Post-electrolysis examination of the anodes using scanning electron microscopy coupled with energy dispersive spectroscopy analysis revealed a depletion of copper from the anode and a build-up of an alumina-rich surface layer under certain conditions.

  7. Metallography and microstructure interpretation of some archaeological tin bronze vessels from Iran

    SciTech Connect (OSTI)

    Oudbashi, Omid; Davami, Parviz

    2014-11-15

    Archaeological excavations in western Iran have recently revealed a significant Luristan Bronzes collection from Sangtarashan archaeological site. The site and its bronze collection are dated to Iron Age II/III of western Iran (10th–7th century BC) according to archaeological research. Alloy composition, microstructure and manufacturing technique of some sheet metal vessels are determined to reveal metallurgical processes in western Iran in the first millennium BC. Experimental analyses were carried out using Scanning Electron Microscopy–Energy Dispersive X-ray Spectroscopy and Optical Microscopy/Metallography methods. The results allowed reconstructing the manufacturing process of bronze vessels in Luristan. It proved that the samples have been manufactured with a binary copper–tin alloy with a variable tin content that may relates to the application of an uncontrolled procedure to make bronze alloy (e.g. co-smelting or cementation). The presence of elongated copper sulphide inclusions showed probable use of copper sulphide ores for metal production and smelting. Based on metallographic studies, a cycle of cold working and annealing was used to shape the bronze vessels. - Highlights: • Sangtarashan vessels are made by variable Cu-Sn alloys with some impurities. • Various compositions occurred due to applying uncontrolled smelting methods. • The microstructure represents thermo-mechanical process to shape bronze vessels. • In one case, the annealing didn’t remove the eutectoid remaining from casting. • The characteristics of the bronzes are similar to other Iron Age Luristan Bronzes.

  8. Temperature measurements of partially-melted tin as a function of shock pressure

    SciTech Connect (OSTI)

    Seifter, Achim; Furlanetto, Michael R; Holtkamp, David B; Obst, Andrew W; Payton, J R; Stone, J B; Tabaka, L J; Grover, M; Macrum, G; Stevens, G D; Swift, D C; Turley, W D; Veeser, L R

    2009-01-01

    Equilibrium equation of state theory predicts that the free surface release temperature of shock loaded tin will show a plateau of 505 K in the pressure range from 19.5 to 33.0 GPa, corresponding to the solid-liquid mixed-phase region. In this paper we report free surface temperature measurements on shock-loaded tin from 15 to 31 GPa using multi-wavelength optical pyrometry. The shock waves were generated by direct contact of detonating high explosive with the sample. The pressure in the sample was determined by free surface velocity measurements using Photon Doppler Velocimetry. The emitted thermal radiance was measured at four wavelength bands in the near IR region from 1.5 to 5.0 {micro}m. The samples in most of the experiments had diamond-turned surface finishes, with a few samples being polished or ball rolled. At pressures higher than 25 GPa the measured free surface temperatures were higher than the predicted 505 K and increased with increasing pressure. This deviation could be explained by hot spots and/or variations in surface emissivity and requires a further investigation.

  9. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    SciTech Connect (OSTI)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing; Roy, V. A. L.

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  10. News Item

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Smart Windows Even Smarter Nanocrystals of indium tin oxide (shown here in blue) embedded in a glassy matrix of niobium oxide (green) form a composite material that can switch between NIR-transmitting and NIR-blocking states with a small jolt of electricity. A synergistic interaction in the region where glassy matrix meets nanocrystal increases the potency of the electrochromic effect. Scientific Achievement Researchers have created a thin coating of nanocrystals embedded in glass that

  11. Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

    SciTech Connect (OSTI)

    Murali, K.V., E-mail: kvmuralikv@gmail.com [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Ragina, A.J. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Preetha, K.C. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Sree Narayana College, Kannur, Kerala 670007 (India); Deepa, K.; Remadevi, T.L. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Pazhassi Raja N.S.S. College, Mattannur, Kerala 670702 (India)

    2013-09-01

    Graphical abstract: - Highlights: Quantum confined SnO{sub 2} thin films were synthesized at 80 C by SILAR technique. Film formation mechanism is discussed. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap confirmed the quantum confinement effect. Present synthesis has advantages low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 58 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.12.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}10{sup ?1} ? cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surfacevolume ratio, and high crystallinity SnO{sub 2} films.

  12. Recommended method for indium-111 platelet survival studies. International Committee for Standardization in Hematology. Panel on Diagnostic Applications of Radionuclides

    SciTech Connect (OSTI)

    Not Available

    1988-04-01

    Radioactive indium (/sup 111/In) has been introduced as an alternative to /sup 51/Cr as a platelet label because of its shorter half-life, higher photon yield and greater affinity for platelets. Furthermore, platelet labelling with /sup 111/In is possible at lower platelet counts than with /sup 51/Cr. In healthy individuals, the kinetics of simultaneously injected /sup 111/In-labeled and /sup 51/Cr-labeled platelets are similar. The document describes the technical and analytic aspects of platelet survival determination with /sup 111/In-labeled platelets and is intended to supplement the previously published recommendations for platelet survival studies.

  13. Contributions of stress and oxidation on the formation of whiskers in Pb-free solders

    SciTech Connect (OSTI)

    Duncan, A. J.; Hoffman, E. N.

    2016-01-01

    Understanding the environmental factors influencing formation of tin whiskers on electrodeposited lead free, tin coatings over copper (or copper containing) substrates is the topic of this study . An interim report* summarized initial observations as to the role of stress and oxide formation on whisker growth. From the initial results, two main areas were chosen to be the focus of additional research: the demonstration of effects of elastic stress state in the nucleation of whiskers and the confirmation of the effect of oxygen content in the formation of whiskers. Different levels of elastic stress were induced with the incorporation of a custom designed fixture that loaded the sample in a four-point bending configuration and were maintained in an environmental chamber under conditions deemed favorable for whisker growth. The effects of oxygen content were studied by aging substrates in gas vials of varying absolute pressure and different oxygen partial pressure.

  14. Hugoniot Measurements at Low Pressures in Tin Using 800 MeV proton Radiography

    SciTech Connect (OSTI)

    Schwartz, Cynthia; Hogan, Gary E; King, Nicholas S. P.; Kwiathowski, Kris K.; Mariam, Fesseha G.; Marr-Lyon, Mark; McNeil, Wendy Vogan; Merrill, Frank E.; Morris, Christopher; Rightley, Paul; Saunders, Alexander

    2009-08-05

    A 2cm long 8 mm diameter cylindrical tin target has been shocked to a pressure in the region of the {beta} {yields} {gamma} phase change using a small, low density PETN charge mounted on the opposite side of a stainless steel diaphragm. The density jump and shock velocity were measured radiographically as the shock wave moved through the sample and the pressure dropped, using the proton radiography facility at LANL. This provided a quasi-continuous record of the equations of state along the Hugoniot for the P1 wave from a shock velocity of 3.25 km/sec down to near the sound speed. Edge release effects were removed from the data using tomographic techniques. The data show evidence for a phase transition that extends over a broad pressure range. The data and analysis will be presented.

  15. HUGONIOT MEASUREMENTS AT LOW PRESSURES IN TIN USING 800 MeV PROTON RADIOGRAPHY

    SciTech Connect (OSTI)

    Schwartz, C. L.; Hogan, G. E.; King, N. S. P.; Kwiatkowski, K.; Mariam, F. G.; Merrill, F. E.; Morris, C. L.; Saunders, A.; Marr-Lyon, M.; Rightley, P. M.; McNeil, W. V.

    2009-12-28

    A 20 mm long 8 mm diameter cylindrical tin target has been shocked to a pressure just below the beta->gamma phase change, using a small, low density PETN charge mounted on the opposite side of a thin stainless steel diaphragm. The density jump and shock velocity were measured radiographically at multiple points as the shock wave moved though the sample and the pressure dropped, using the proton radiography facility at LANL. This provided a quasi-continuous record along the principal Hugoniot from a peak shock velocity of 3.27 km/sec to a minimum of 3.09 km/sec. Edge release effects were removed from the data using simple tomographic reconstruction techniques. The data and analysis are presented.

  16. X-ray diffraction of solid tin to 1.2 TPa

    SciTech Connect (OSTI)

    Lazicki, A.; Rygg, J. R.; Coppari, F.; Smith, R.; Fratanduono, D.; Kraus, R. G.; Collins, G. W.; Briggs, R.; Braun, D. G.; Swift, D. C.; Eggert, J. H.

    2015-08-12

    In this study, we report direct in situ measurements of the crystal structure of tin between 0.12 and 1.2 TPa, the highest stress at which a crystal structure has ever been observed. Using angle-dispersive powder x-ray diffraction, we find that dynamically compressed Sn transforms to the body-centered-cubic (bcc) structure previously identified by ambient-temperature quasistatic-compression studies and by zero-kelvin density-functional theory predictions between 0.06 and 0.16 TPa. However, we observe no evidence for the hexagonal close-packed (hcp) phase found by those studies to be stable above 0.16 TPa. Instead, our results are consistent with bcc up to 1.2 TPa. We conjecture that at high temperature bcc is stabilized relative to hcp due to differences in vibrational free energy.

  17. X-ray diffraction of solid tin to 1.2 TPa

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lazicki, A.; Rygg, J. R.; Coppari, F.; Smith, R.; Fratanduono, D.; Kraus, R. G.; Collins, G. W.; Briggs, R.; Braun, D. G.; Swift, D. C.; et al

    2015-08-12

    In this study, we report direct in situ measurements of the crystal structure of tin between 0.12 and 1.2 TPa, the highest stress at which a crystal structure has ever been observed. Using angle-dispersive powder x-ray diffraction, we find that dynamically compressed Sn transforms to the body-centered-cubic (bcc) structure previously identified by ambient-temperature quasistatic-compression studies and by zero-kelvin density-functional theory predictions between 0.06 and 0.16 TPa. However, we observe no evidence for the hexagonal close-packed (hcp) phase found by those studies to be stable above 0.16 TPa. Instead, our results are consistent with bcc up to 1.2 TPa. We conjecturemore » that at high temperature bcc is stabilized relative to hcp due to differences in vibrational free energy.« less

  18. Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, S.C.; Meinken, G.E.; Mausner, L.F.; Atkins, H.L.

    1998-12-29

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients. 5 figs.

  19. Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Meinken, George E.; Mausner, Leonard F.; Atkins, Harold L.

    1998-12-29

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

  20. Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

    SciTech Connect (OSTI)

    Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.; Lu, Jiwei

    2015-11-25

    Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

  1. Colloidal processing and sintering of nano-scale TiN

    SciTech Connect (OSTI)

    Nab, R.; Albayrak, S.; Aslan, M.; Schmidt, H.

    1995-09-01

    Surface modification of nano-scale TiN powder with guanidine propionic acid was used for the preparation of well dispersed slurries. The starting powder could be completely deagglomerated for modifier concentrations exeeding 7.5 wt.-% at pH = 9. Such slurries ({le} 40 wt.-% solid content) behave like an ideal Netwonian liquid. Green compacts with relative densities around 50 % were prepared by pressure filtration. The specimens are characterized by a homogeneous green microstructure with pore sizes in the range of 3 to 10 mn, which could be sintered to high density (> 96 %) below 1400{degrees}C. Up to densities of 96 % grain coarsening can be neglected, but further densification was accompanied by an exaggregated grain growth.

  2. Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Caskey, Christopher M.; Holder, Aaron; Shulda, Sarah; Christensen, Steven T.; Diercks, David; Schwartz, Craig P.; Biagioni, David; Nordlund, Dennis; Kukliansky, Alon; Natan, Amir; et al

    2016-04-12

    Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for these studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin filmmore » experiments indicate that this novel material is N-deficient SnN with tin in the mixed II/IV valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of the metastable material. In addition to reporting on the discovery of the simple binary SnN compound, this study illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials.« less

  3. Oxidation catalyst

    DOE Patents [OSTI]

    Ceyer, Sylvia T.; Lahr, David L.

    2010-11-09

    The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

  4. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    SciTech Connect (OSTI)

    Gelinck, G. H.; Breemen, A. J. J. M. van; Cobb, B.

    2015-03-02

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  5. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    DOE Patents [OSTI]

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  6. Catalytic propane dehydrogenation over In₂O₃–Ga₂O₃ mixed oxides

    SciTech Connect (OSTI)

    Tan, Shuai; Gil, Laura Briones; Subramanian, Nachal; Sholl, David S.; Nair, Sankar; Jones, Christopher W.; Moore, Jason S.; Liu, Yujun; Dixit, Ravindra S.; Pendergast, John G.

    2015-08-26

    We have investigated the catalytic performance of novel In₂O₃–Ga₂O₃ mixed oxides synthesized by the alcoholic-coprecipitation method for propane dehydrogenation (PDH). Reactivity measurements reveal that the activities of In₂O₃–Ga₂O₃ catalysts are 1–3-fold (on an active metal basis) and 12–28-fold (on a surface area basis) higher than an In₂O₃–Al₂O₃ catalyst in terms of C₃H₈ conversion. The structure, composition, and surface properties of the In₂O₃–Ga₂O₃ catalysts are thoroughly characterized. NH₃-TPD shows that the binary oxide system generates more acid sites than the corresponding single-component catalysts. Raman spectroscopy suggests that catalysts that produce coke of a more graphitic nature suppress cracking reactions, leading to higher C₃H₆ selectivity. Lower reaction temperature also leads to higher C₃H₆ selectivity by slowing down the rate of side reactions. XRD, XPS, and XANES measurements, strongly suggest that metallic indium and In₂O₃ clusters are formed on the catalyst surface during the reaction. The agglomeration of In₂O₃ domains and formation of a metallic indium phase are found to be irreversible under O₂ or H₂ treatment conditions used here, and may be responsible for loss of activity with increasing time on stream.

  7. Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating

    DOE Patents [OSTI]

    Howard, Stanley R.; Korinko, Paul S.

    2008-05-27

    A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

  8. Reducing the In2O3(111) Surface Results in Ordered Indium Adatoms

    SciTech Connect (OSTI)

    Wagner, Margareta; Seiler, Steffen; Meyer, Bernd; Boatner, Lynn A; Schmid, M.; Diebold, U.

    2014-01-01

    The In2O3(111) surface can be transformed from an oxidized bulk termination to one that is covered by single In adatoms. As each adatom sits at one specific site within the surface unit cell they form a well-ordered (1 1) superstructure. Annealing at 500 C in O2 or in ultrahigh vacuum results in a fully reversible conversion between these two surface terminations; this transformation and intermediate stages were followed with Scanning Tunneling Microscopy (STM). Formation of this novel surface structure under reducing conditions is corroborated by Density Functional Theory (DFT). The reduced adatom-covered and the oxidized In2O3(111) surfaces are expected to exhibit different chemical and electronic properties, which can easily be exploited by the facile and reversible switching between the two terminations.

  9. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    SciTech Connect (OSTI)

    Li, Qin; Song, Zhong Xiao; Ma, Fei E-mail: liyhemail@gmail.com; Li, Yan Huai E-mail: liyhemail@gmail.com; Xu, Ke Wei

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  10. Chemical diffusion of oxygen in tin dioxide: Effects of dopants and oxygen partial pressure

    SciTech Connect (OSTI)

    Kamp, B.; Merkle, R. . E-mail: s.weiglein@fkf.mpg.de; Lauck, R.; Maier, J.

    2005-10-15

    Tin dioxide SnO{sub 2-{delta}} is a pronounced n-type electron conductor due to its oxygen deficiency. This study investigates the rate of chemical diffusion of oxygen in SnO{sub 2-{delta}} single crystals, which is a crucial step in the overall stoichiometry change of the material. The chemical diffusion coefficient D{sup {delta}} was determined from conductivity- and EPR-relaxation methods. The temperature dependence was found to be D{sup {delta}}=exp(-4+/-2)cm{sup 2}s{sup -1}exp(-(1.1+/-0.3)eV/kT). The dependence on crystal orientation, dopant content and oxygen partial pressure was below experimental error. The latter observation leads to the conclusion that the chemical diffusion coefficient is close to the diffusion coefficient of oxygen vacancies. Along with the relaxation process resulting from the chemical diffusion of oxygen, additional processes were observed. One of these was attributed to complications in the defect chemistry of the material. The relevance of the results for the kinetics of drift processes of Taguchi sensors is discussed.