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1

P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene  

E-Print Network [OSTI]

P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene Terephthalate The wear mechanisms of the Indium Tin Oxide (ITO) coated Polyethylene Terephthalate (PET) topsheet). The bottom substrate is typically glass and the top sheet a polyester such as Polyethylene Terephthalate (PET

Cairns, Darran

2

Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement  

E-Print Network [OSTI]

Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

Park, Yong Tae

2012-07-16T23:59:59.000Z

3

Magnetoresistance and Microstructure of Magnetite Nanocrystals Dispersed in Indium?Tin Oxide Thin Films  

Science Journals Connector (OSTI)

Indium?tin oxide (ITO) is the most widely used TCO in the semiconductor and electronic device industries. ... NCs of inverse-spinel-type Fe3O4 grew epitaxially on the YSZ substrate, as shown in Figure 4. ...

Koichi Okada; Shigemi Kohiki; Masanori Mitome; Hidekazu Tanaka; Masao Arai; Masaki Mito; Hiroyuki Deguchi

2009-09-02T23:59:59.000Z

4

Indium tin oxide and indium phosphide heterojunction nanowire array solar cells  

SciTech Connect (OSTI)

Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

Yoshimura, Masatoshi, E-mail: yoshimura@rciqe.hokudai.ac.jp; Nakai, Eiji; Fukui, Takashi [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan)] [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan); Tomioka, Katsuhiro [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan) [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan); PRESTO, Japan Science and Technology Agency (JST), Honcho Kawaguchi, 332–0012 Saitama (Japan)

2013-12-09T23:59:59.000Z

5

High-efficiency indium tin oxide/indium phosphide solar cells  

SciTech Connect (OSTI)

Improvements in the performance of indium tin oxide/indium phosphide (ITO/InP) solar cells have been achieved by using dc magnetron sputter deposited /ital n/-ITO onto an epitaxial /ital p///ital p//sup +/ structure grown on good quality commercial /ital p//sup +/ bulk substrates. The composition of the sputtering gas has been investigated and the highest efficiency cells resulted when the surface of the epilayer was exposed to an Ar/H/sub 2/ plasma before depositing the bulk of the ITO in a more typical Ar/O/sub 2/ plasma. With H/sub 2/ processing, record efficiencies of 18.9% global, 1000 W m/sup /minus/2/, 25 /degree/C (17.0% air mass zero) were achieved. Without H/sub 2/ processing, the devices exhibited lower efficiencies and were unstable. Type conversion of the InP was shown to occur and was established as being associated with the ITO (possibly due to Sn donors) rather than sputter damage. These improvements in performance have resulted from the optimization of the doping, thickness, transport, and surface properties of the /ital p/-type base, as well as from better control over the ITO deposition procedure.

Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

1989-06-26T23:59:59.000Z

6

A study of degradation of indium tin oxide thin films on glass for display applications  

Science Journals Connector (OSTI)

Indium tin oxide (ITO) has been widely used in liquid crystal displays (LCD). Contamination and moisture have proved to have the adverse effect of causing ITO corrosion/degradation. The purpose of this paper is to determine if scratching the surface ... Keywords: Accelerated degradation test, ITO corrosion, ITO degradation, Scratching

W. S. Leung; Y. C. Chan; S. M. Lui

2013-01-01T23:59:59.000Z

7

High Electric Resistance Polymer/Lipid Composite Films on Indium?Tin?Oxide Electrodes  

Science Journals Connector (OSTI)

High Electric Resistance Polymer/Lipid Composite Films on Indium?Tin?Oxide Electrodes ... Impedance spectra were analyzed in terms of equivalent circuits with resistances, capacitances, and so-called “constant phase elements”. ... resists in directing the selective deposition of metal and ceramic thin films by MOCVD and sol-gel methods, resp. ...

Heiko Hillebrandt; Gerald Wiegand; Motomu Tanaka; Erich Sackmann

1999-09-21T23:59:59.000Z

8

Chemical interactions at polymer interfaces: poly(p-xylylene-?-tetrahydrothiophene-bromide, chloride) on indium–tin-oxide  

Science Journals Connector (OSTI)

Chemical interactions, at the interface between a precursor polymer for poly(p-phenylenevinylene), namely poly(p-xylylene-?-tetrahydrothiophene-chloride), and an indium–tin-oxide transparent electrode, are identified using X-ray photoelectron spectroscopy. The \\{HCl\\} eliminated in the conversion process interacts with the surface of the indium–tin-oxide substrate leading to the formation of indium chloride which then diffuses into the polymer. It appears that indium–tin-oxide, or possibly the indium chloride generated at the interface, acts as a catalyst for the thermal elimination reaction. The results show unequivocally that interfacial interactions are of major importance in understanding, and ultimately improving, the performance of polymer-based electro-luminescent devices.

A Andersson; Th Kugler; M Lögdlund; A.B Holmes; X Li; W.R Salaneck

1999-01-01T23:59:59.000Z

9

Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment  

SciTech Connect (OSTI)

Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding ?/2 at 1.0 THz was achieved in a ?517??m-thick cell. The phase shifter exhibits high transmittance (?78%). The driving voltage required for quarter-wave operation is as low as 5.66?V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

Yang, Chan-Shan [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tang, Tsung-Ta [Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (China); Pan, Ru-Pin [Department of Electrophysics, National Chiao Tung University, Hsinchu 30078, Taiwan (China); Yu, Peichen [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Pan, Ci-Ling, E-mail: clpan@phys.nthu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Science of Matters, Hsinchu 30013, Taiwan (China)

2014-04-07T23:59:59.000Z

10

Highly efficient inverted organic solar cells using amino acid modified indium tin oxide as cathode  

SciTech Connect (OSTI)

In this paper, we report that highly efficient inverted organic solar cells were achieved by modifying the surface of indium tin oxide (ITO) using an amino acid, Serine (Ser). With the modification of the ITO surface, device efficiency was significantly enhanced from 0.63% to 4.17%, accompanied with an open circuit voltage (Voc) that was enhanced from 0.30?V to 0.55?V. Ultraviolet and X-ray photoelectron spectroscopy studies indicate that the work function reduction induced by the amino acid modification resulting in the decreased barrier height at the ITO/organic interface played a crucial role in the enhanced performances.

Li, Aiyuan; Nie, Riming; Deng, Xianyu, E-mail: xydeng@hitsz.edu.cn [Research Center for Advanced Functional Materials and Devices, Shenzhen Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Wei, Huaixin; Li, Yanqing; Tang, Jianxin [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123 (China); Zheng, Shizhao; Wong, King-Young [Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)

2014-03-24T23:59:59.000Z

11

Conductive indium-tin oxide nanowire and nanotube arrays made by electrochemically assisted deposition in template membranes: switching  

E-Print Network [OSTI]

Conductive indium-tin oxide nanowire and nanotube arrays made by electrochemically assisted-step electrochemically assisted deposition (EAD) process inside Au-plugged anodic aluminium oxide and polycarbonate electrodes in dye-sensi- tized2,6­11 and polymer12 solar cells, fillers in transparent and conductive polymer

12

Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes  

SciTech Connect (OSTI)

In this paper we report on Indium Tin Oxide (ITO)-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend and patterned poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

Schmidt, Morten, E-mail: morten.schmidt@nano.ei.tum.de; Falco, Aniello; Loch, Marius; Lugli, Paolo; Scarpa, Giuseppe [Institute for Nanoelectronics, Technical University of Munich, Arcisstr. 21, 80333 Munich (Germany)

2014-10-15T23:59:59.000Z

13

Electric Resistance Change Mechanism of Indium-Tin Oxide Film During Deposition of Dielectric Oxide Films by RF Magnetron Sputtering  

Science Journals Connector (OSTI)

Electric resistance change of indium-tin oxide (ITO) film was investigated when dielectric oxide films such as Sr(Zr0.2Ti0.8)O3 and Y2O3 for an electroluminescent device were deposited on the ITO by the rf magnetron sputtering method using oxide ceramic targets. In order to understand the mechanism of the resistance change, a dc voltage of -70~+70 V was biased to an ITO film during the sputtering of dielectric oxide films. The resistance of the ITO film became higher in the positive bias region. The cause of the increase in resistance of the ITO films was confirmed to be oxidation by the oxide targets and the sputtering gas. The amount of the resistance change could be qualitatively explained by the ratio of the oxygen introduced into the ITO film and the combined oxygen forming O2 gas at the ITO surface incident to the ITO film at the sputtering of the dielectric oxide films.

Tomizo Matsuoka; Jun Kuwata; Masahiro Nishikawa; Yosuke Fujita; Takao Tohda; Atsushi Abe

1988-01-01T23:59:59.000Z

14

A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions  

SciTech Connect (OSTI)

ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

Deka, Angshuman; Nanda, Karuna Kar [Materials Research Centre, Indian Institute of Science, Bangalore - 560012 (India)

2013-06-15T23:59:59.000Z

15

Investigation of buried homojunctions in p -InP formed during sputter deposition of both indium tin oxide and indium oxide  

SciTech Connect (OSTI)

Although it is apparent that direct current (dc) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single crystal {ital p}-type InP, the actual mechanism of type conversion of the InP surface is not clear, nor is it immediately obvious how further improvements may be achieved. Previously, we have suggested that type conversion is caused by indiffusion of Sn during the ITO deposition process and additionally demonstrated that this effect is strengthened by the presence of hydrogen in the sputtering gas. Recently, however, efficiencies of almost 17% (Global) have been achieved for cells fabricated by sputter depositing In{sub 2}O{sub 3}(IO) alone, strongly suggesting that the Sn may not be an essential part of type conversion. In this work, a variety of electrical and optical techniques has been used to assess the changes at the ITO/InP and IO/InP interfaces. From these, it is concluded that several mechanisms, including passivation of acceptors by hydrogen and sputter damage,'' occur simultaneously. This analysis suggests several directions for further improvement of these devices.

Gessert, T.A.; Li, X.; Wanlass, M.W.; Nelson, A.J.; Coutts, T.J. (Solar Energy Research Institute, Golden, CO (USA))

1990-05-01T23:59:59.000Z

16

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Journals Connector (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung; Keun Man Song; Young Su Choi; Hyeong-Ho Park; Hyun-Beom Shin; Ho Kwan Kang; Jaejin Lee

2013-01-01T23:59:59.000Z

17

Efficient Polymer Solar Cells Fabricated on Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)-Etched Old Indium Tin Oxide Substrates  

SciTech Connect (OSTI)

In organic electronic devices, indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the most common transparent electrode and anodic buffer layer materials, respectively. A widespread concern is that PEDOT:PSS is acidic and etches ITO. We show that this issue is not serious: only a few nanometers of ITO are etched in typical device processing conditions and storage thereafter; conductivity losses are affordable; and optical transmission gains further offset these losses. Organic photovoltaic (OPV) devices fabricated on old ITO (with PEDOT:PSS history) were similar or higher in efficiency than devices on fresh ITO. Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b?]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl

Elshobaki, Moneim [Mansoura University; Anderegg, James [Ames Laboratory; Chaudhary, Sumit [Ames Laboratory

2014-08-13T23:59:59.000Z

18

Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes  

SciTech Connect (OSTI)

We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup ?} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2?eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91?cd/A, 102?lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

2014-01-27T23:59:59.000Z

19

Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm  

SciTech Connect (OSTI)

Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

Wang Haifeng; Huang Zhimeng; Zhang Dayong; Luo Fei; Huang Lixian; Li Yanglong; Luo Yongquan; Wang Weiping; Zhao Xiangjie [Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900 (China)

2011-12-01T23:59:59.000Z

20

Indium-tin-oxide-free tris(8-hydroxyquinoline) Al organic light-emitting diodes with 80% enhanced power efficiency  

SciTech Connect (OSTI)

Efficient indium tin oxide (ITO)-free small molecule organic light-emitting diodes (SMOLEDs) with multilayered highly conductive poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) as the anode are demonstrated. PEDOT:PSS/MoO{sub 3}/N,N'-diphenyl- N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPD)/tris(8-hydroxyquinoline) Al (Alq{sub 3})/4,7-diphenyl-1,10-phenanthroline (BPhen)/LiF/Al SMOLEDs exhibited a peak power efficiency of 3.82 lm/W, 81% higher than that of similar ITO-based SMOLEDs (2.11 lm/W). The improved performance is believed to be due to the higher work function, lower refractive index, and decreased surface roughness of PEDOT:PSS vs ITO, and to Ohmic hole injection from PEDOT:PSS to the NPD layer via the MoO{sub 3} interlayer. The results demonstrate that PEDOT:PSS can substitute ITO in SMOLEDs with strongly improved device performance.

Cai, Min; Xiao, Teng; Liu, Rui; Chen, Ying; Shinar, Ruth; Shinar, Joseph

2011-10-11T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Multilayer films of indium tin oxide/TiO2 codoped with vanadium and nitrogen for efficient photocatalytic water splitting  

Science Journals Connector (OSTI)

TiO22 films codoped with V cations and N anions were synthesised by RF-magnetron sputtering. The incorporation of V and N in TiO2 lattice produces isolated energy levels near the conduction and valence bands, respectively, causing an effective narrowing of the band gap to 2.5 eV. Recombination of photo-charges was reduced by depositing multilayer films of indium tin oxide (ITO)/V-N-codoped TiO2 with different numbers of bilayers. In multilayer structure, the generated photoelectrons, travelling into TiO2 film of limited thickness, rapidly enter the space charge interface of the ITO/TiO2 films from where they are instantaneously injected into the ITO layer and then removed towards the cathode. The synergic effects created by band narrowing and enhanced charge separation by using codoping and multilayer structure strategy in TiO2 generate higher photocurrent for water splitting under visible light which definitely exceeds that obtained by doping TiO2 with a single, V or N, element.

Z. El Koura; N. Patel; R. Edla; A. Miotello

2014-01-01T23:59:59.000Z

22

Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode  

SciTech Connect (OSTI)

We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

2014-07-07T23:59:59.000Z

23

The insert of zinc oxide thin film in indium tin oxide anode for organic electroluminescence devices q  

E-Print Network [OSTI]

structure including a trans- parent anode, an organic active layer, and a metallic cathode. It has recently zinc oxide films have been actively investigated as alternate materials to ITO because zinc oxide consisted of Al as a cathode, Al2O3 as an electro transport layer, Alq3 as a luminously layer, TPD as a hole

Boo, Jin-Hyo

24

Enhancement of conduction noise absorption by hybrid absorbers composed of indium-tin-oxide thin film and magnetic composite sheet on a microstrip line  

SciTech Connect (OSTI)

In order to develop wide-band noise absorbers with a focused design for low frequency performance, this study investigates hybrid absorbers that are composed of conductive indium-tin-oxide (ITO) thin film and magnetic composite sheets. The ITO films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ?10{sup ?4} ? m. Rubber composites with flaky Fe-Si-Al particles are used as the magnetic sheet with a high permeability and high permittivity. For the ITO film with a low surface resistance and covered by the magnetic sheet, approximately 90% power absorption can be obtained at 1?GHz, which is significantly higher than that of the original magnetic sheet or ITO film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the ITO film through increased electric field strength bounded by the upper magnetic composite sheet. However, for the reverse layering sequence of the ITO film, the electric field experienced by ITO film is very weak due to the electromagnetic shielding by the under layer of magnetic sheet, which does not result in enhanced power absorption.

Kim, Sun-Hong; Kim, Sung-Soo, E-mail: sskim@chungbuk.ac.kr [Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

2014-05-05T23:59:59.000Z

25

Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer  

SciTech Connect (OSTI)

Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150?°C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100?°C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

Chen, Dazheng; Zhang, Chunfu, E-mail: cfzhang@xidian.edu.cn; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue, E-mail: yhao@xidian.edu.cn [State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South Taibai Road, Xi'an 710071 (China)

2014-06-16T23:59:59.000Z

26

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

Solar cells based on dc magnetron sputtered indium tin oxide onto epitaxially grown films of p-InP have been fabricated and analyzed. The best cells had a global efficiency of 18.4% and an air mass zero (AMO) efficiency of 16.0%. The principal fabrication variable considered was the constituency of the sputtering gas and both argon/hydrogen and argon/oxygen mixtures have been used. The former cells have the higher efficiencies, are apparently stable, and exhibit almost ideal junction characteristics. The latter cells are relatively unstable and exhibit much higher ideality factors and reverse saturation current densities. The temperature dependence of the reverse saturation current indicates totally different charge transfer mechanisms in the two cases.

Li, X.; Wanlass, M.W.; Gessert, T.A.; Emery, K.A.; Coutts, T.J.

1989-05-01T23:59:59.000Z

27

Enhanced superconducting pairing interaction in indium-doped tin telluride  

SciTech Connect (OSTI)

The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

Erickson, A.S.

2010-05-03T23:59:59.000Z

28

Enhanced superconducting pairing interaction in indium-doped tin telluride  

SciTech Connect (OSTI)

The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

Erickson, A.S.; Chu, J.-H.; /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Toney, M.F.; Geballe, T.H.; Fisher, I.R.; /SLAC, SSRL /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.

2010-02-15T23:59:59.000Z

29

Indium oxide/n-silicon heterojunction solar cells  

DOE Patents [OSTI]

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1982-12-28T23:59:59.000Z

30

Implications of the toxicity of tetramethyltin, dimethyl tin dichloride, and tin tetrachloride in selecting a suitable tin precursor in the chemical vapor deposition of tin oxide  

Science Journals Connector (OSTI)

Potential health hazards in the chemical vapor deposition of tin oxide films from tetramethylin dimethylin dichloride and tin tetrachloride have to be balanced against the benefits to solar cell fabrication. Concerns regarding the toxicity costs and physical properties of and the quality of the tin oxide films produced with these tin precursors are outlined. (AIP)

Roy G. Gordon; James W. Prescia

1988-01-01T23:59:59.000Z

31

Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (?-Ge)  

Science Journals Connector (OSTI)

Abstract In this paper, metal-induced crystallization (MIC) phenomenon on ?-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

Dong-Ho Kang; Jin-Hong Park

2014-01-01T23:59:59.000Z

32

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films  

SciTech Connect (OSTI)

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50?°C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

2014-09-01T23:59:59.000Z

33

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Journals Connector (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

34

Method for forming indium oxide/n-silicon heterojunction solar cells  

DOE Patents [OSTI]

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1984-03-13T23:59:59.000Z

35

Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions  

SciTech Connect (OSTI)

The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO{sub 2}) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO{sub 2}. The H-concentration of the In-doped SnO{sub 2} films increased to (1–2)?×?10{sup 19}?cm{sup ?3} by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.

Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); International Center for Young Scientists (ICYS-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Ohsawa, Takeo; Ross, Emily M., E-mail: emross@hmc.edu; Adachi, Yutaka; Haneda, Hajime [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sakaguchi, Isao; Takahashi, Ryosuke [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Paul-Drude-Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Materials Department, University of California, Santa Barbara, California 93106 (United States); White, Mark E.; Tsai, Min-Ying; Speck, James S., E-mail: speck@ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

2014-03-31T23:59:59.000Z

36

Combinatorial study of zinc tin oxide thin-film transistors  

SciTech Connect (OSTI)

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO:SnO{sub 2} ratio of the film varies as a function of position on the sample, from pure ZnO to SnO{sub 2}, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2 to 12 cm{sup 2}/V s, with two peaks in mobility in devices at ZnO fractions of 0.80{+-}0.03 and 0.25{+-}0.05, and on/off ratios as high as 10{sup 7}. Transistors composed predominantly of SnO{sub 2} were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

McDowell, M. G.; Sanderson, R. J.; Hill, I. G. [Dalhousie University, Department of Physics, Halifax, Nova Scotia B3H 3J5 (Canada)

2008-01-07T23:59:59.000Z

37

Tin oxide-titanium oxide/graphene composited as anode materials for lithium-ion batteries  

Science Journals Connector (OSTI)

A tin oxide-titanium oxide/graphene (SnO2-TiO2.../G) ternary nanocomposite as high-performance anode for Li-ion batteries was prepared via a simple reflux method. ... The graphite oxide (GO) was reduced to graphene

Shan-Shan Chen; Xue Qin

2014-10-01T23:59:59.000Z

38

One-pot synthesis of highly mesoporous antimony-doped tin oxide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

One-pot synthesis of highly mesoporous antimony-doped tin oxide from interpenetrating inorganicorganic networks Authors: Volosin, A.M., Sharma, S., Traverse, C., Newman, N., and...

39

Graphene oxide oxidizes stannous ions to synthesize tin sulfidegraphene nanocomposites with small crystal size for high performance lithium ion  

E-Print Network [OSTI]

Graphene oxide oxidizes stannous ions to synthesize tin sulfide­graphene nanocomposites with small September 2012 DOI: 10.1039/c2jm34864k This study reports a novel strategy of preparing graphene composites by employing graphene oxide as precursor and oxidizer. It is demonstrated that graphene oxide can oxidize

Cao, Guozhong

40

Sensors and Actuators B 118 (2006) 135141 Low temperature indium oxide gas sensors  

E-Print Network [OSTI]

Sensors and Actuators B 118 (2006) 135­141 Low temperature indium oxide gas sensors M. Sucheaa rights reserved. Keywords: Metal oxide thin films; InOx; Gas sensors; Ozone 1. Introduction The interest's attractive for many areas such as transparent electrodes for solar cells and flat panel displays

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Tin oxide based gas sensor for in-door air quality monitoring  

Science Journals Connector (OSTI)

Tin oxide nanograins doped with 0.1 at% of antimony have shown highly sensitivity towards tail gas, carbon monoxide and second-hand smoke. Such sensors are very useful for air quality...

Zhu, Lianfeng; Gai, Guosheng; Zhang, Changyue; Ji, Xuewen; Yao, Youwei

42

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer  

DOE Patents [OSTI]

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1980-01-01T23:59:59.000Z

43

On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.  

SciTech Connect (OSTI)

Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

2006-11-01T23:59:59.000Z

44

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors  

SciTech Connect (OSTI)

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

2014-04-14T23:59:59.000Z

45

Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone  

SciTech Connect (OSTI)

In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1?±?0.01?nm/cycle within the wide ALD temperature window of 175–300?°C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3?? cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

Kannan Selvaraj, Sathees [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Feinerman, Alan [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Departments of Bioengineering and Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

2014-01-15T23:59:59.000Z

46

Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Instruments: Ultra-high Vacuum, Low-temperature Scanning Probe Microscope Instrument, or UHV LT SPM Tags: oxides ultra-high vacuum UHV VT SPM atomic-resolution imaging structural...

47

Growth of single-crystalline rutile TiO2 nanorods on fluorine-doped tin oxide glass for organicinorganic  

E-Print Network [OSTI]

, 15] and CdS [2] have been explored and studied to overcome this shortcome, and used in organicGrowth of single-crystalline rutile TiO2 nanorods on fluorine-doped tin oxide glass for organic

Cao, Guozhong

48

Growth of CrO[subscript 2] coated single crystalline (SnO[subscript 2]) tin oxide nanowires  

E-Print Network [OSTI]

Single crystalline tin oxide (SnO[subscript 2]) nanowires have been synthesized by carbothermal reduction of SnO[subscript 2] nanopowder followed by thermal evaporation of the reduced precursor and growth via the ...

Miao, Guo-Xing

49

Crystalline to amorphous phase transition of tin oxide nanocrystals induced by SHI at low temperature  

SciTech Connect (OSTI)

Tin oxide (SnO{sub 2}) thin films were deposited using pulsed laser deposition (PLD) technique on Si substrates. The as-deposited films were irradiated using 100 MeV Ag ions at different fluences ranging from 3x10{sup 13} to 3x10{sup 14} ions/cm{sup 2} at an incidence angle of 75 deg. with respect to surface normal at liquid nitrogen (LN2) temperature. The as-deposited and irradiated films have been characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques to study the modifications in structural and surface morphological properties. Nanocrystalline film become completely amorphous and nanograins of tin oxide disappeared from the surface as indicated by XRD spectra and AFM micrographs respectively.

Kumar, Vijay; Pratap, Deepti; Jain, Anshul; Agarwal, D. C.; Sulania, I.; Tripathi, A.; Chaudhary, R. J.; Chauhan, R. S. [Department of Physics, R.B.S. College, Agra, U.P.,-282 002 (India); Inter-University Accelerator Centre, New Delhi, -110 067 (India); UGC-DAE CSR, Khandwa Road, Indore, M.P., -452 017 (India); Department of Physics, R.B.S. College, Agra, U.P., -282 002 (India)

2012-06-05T23:59:59.000Z

50

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect (OSTI)

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

51

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen  

SciTech Connect (OSTI)

The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

2014-06-09T23:59:59.000Z

52

The active dopant concentration in ion implanted indium tin oxide thin films  

Science Journals Connector (OSTI)

The effect of oxygen ion implantation on the electrical and optical properties of Sn?doped In2O3 (ITO) thin films sputter deposited from a planar magnetron source on glass substrates is described. The films were characterized as a function of the implanted dose (3×1013–1×1016 O+ cm?2) by Hall effect resistivity and optical transmission measurements. The dependencies observed are explained in terms of the deactivation of the Sn dopant and the removal of oxygen vacancies. In this way an estimate of the amount of electrically active Sn contributing to the carrier density in as?deposited films was obtained. Furthermore the accompanying changes in the band gap with decreasing free?carrier density could be explained quantitatively in terms of the Burstein–Moss effect.

T. J. Vink; M. H. F. Overwijk; W. Walrave

1996-01-01T23:59:59.000Z

53

The Race To Replace Tin-Doped Indium Oxide: Which Material Will Win?  

E-Print Network [OSTI]

) and solar cells.1,2 In the case of solar cells, these components work as anodes to extract separated charge vacuum filtration and a poly(dimethyl siloxane) (PDMS)-assisted transfer technique and subsequently used

Zhou, Chongwu

54

Synthesis and Characterization of Mesostructured Tin Oxide with Crystalline  

E-Print Network [OSTI]

synthesis of silica-based mesoporous molecular materials (MCM-41) with uni- formly sized pores,1 routes. The obtained mesoporous metal oxide materials usually consist of amorphous walls, although be of industrial interest. Recently, a mesoporous phase based on SnO2 has been successfully synthesized by using

Qi, Limin

55

Tin clustering and precipitation in the oxide during autoclave corrosion of Zircaloy-2  

Science Journals Connector (OSTI)

Abstract Atom probe tomography has been used to study the evolution of tin distribution during the corrosion process in Zircaloy-2. From being completely soluble in the Zr metal matrix, some clustering is evident already in the newly formed oxide close to the metal-oxide interface. Analysis of thicker oxides a few hundred nanometers away from the interface reveals fully developed precipitates of metallic Sn particles of up to 20 nm in size. Although the precipitates contain significant amounts of Zr, it is concluded that they are in the process of being depleted in Zr, which is limited only by the slow diffusion in the oxide scale. The findings are interpreted as being a result of the nobility of the Sn yielding a strong driving force to remain in a metallic state after incorporation in the barrier oxide layer. As Sn occupies substitutional sites in the ZrO2 lattice it is oxidized to a 4+ state when incorporated into the oxide, and in order to remain metallic it must nucleate into precipitates within the inner part of the oxide scale before being re-oxidized to 2+ and eventually to 4+ when the oxygen activity is sufficiently high in the outer parts of the oxide.

G. Sundell; M. Thuvander; H.-O. Andrén

2014-01-01T23:59:59.000Z

56

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures  

SciTech Connect (OSTI)

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup ?1} s{sup ?1} at low operating voltages (<5?V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Geier, Michael L.; Prabhumirashi, Pradyumna L. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Department of Medicine, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-10T23:59:59.000Z

57

Investigation of hexadecanethiol self-assembled monolayers on cadmium tin oxide thin films  

Science Journals Connector (OSTI)

This study reports the use of variable angle reflectance Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy to investigate the formation of a 1-hexadecanethiol adlayer on cadmium tin oxide (CTO) thin film surfaces. These adlayers appear to be robust, ordered monolayers. The optical and electronic properties of CTO thin films chemically vapor deposited onto glass substrates were also investigated. The reflectance of the CTO films was dependent upon the incident angle of the impinging radiation and revealed a reflectance decrease indicative of a plasma frequency in the mid-IR using p-polarized radiation.

Crissy L. Rhodes; Scott H. Brewer; Jaap Folmer; Stefan Franzen

2008-01-01T23:59:59.000Z

58

Highly Active Iridium/Iridium Tin/Tin Oxide Heterogeneous Nanoparticles as Alternative Electrocatalysts for the Ethanol Oxidation Reaction  

SciTech Connect (OSTI)

Ethanol is a promising fuel for low-temperature direct fuel cell reactions due to its low toxicity, ease of storage and transportation, high-energy density, and availability from biomass. However, the implementation of ethanol fuel cell technology has been hindered by the lack of low-cost, highly active anode catalysts. In this paper, we have studied Iridium (Ir)-based binary catalysts as low-cost alternative electrocatalysts replacing platinum (Pt)-based catalysts for the direct ethanol fuel cell (DEFC) reaction. We report the synthesis of carbon supported Ir{sub 71}Sn{sub 29} catalysts with an average diameter of 2.7 {+-} 0.6 nm through a 'surfactant-free' wet chemistry approach. The complementary characterization techniques, including aberration-corrected scanning transmission electron microscopy equipped with electron energy loss spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and X-ray absorption spectroscopy, are used to identify the 'real' heterogeneous structure of Ir{sub 71}Sn{sub 29}/C particles as Ir/Ir-Sn/SnO{sub 2}, which consists of an Ir-rich core and an Ir-Sn alloy shell with SnO{sub 2} present on the surface. The Ir{sub 71}Sn{sub 29}/C heterogeneous catalyst exhibited high electrochemical activity toward the ethanol oxidation reaction compared to the commercial Pt/C (ETEK), PtRu/C (Johnson Matthey) as well as PtSn/C catalysts. Electrochemical measurements and density functional theory calculations demonstrate that the superior electro-activity is directly related to the high degree of Ir-Sn alloy formation as well as the existence of nonalloyed SnO{sub 2} on surface. Our cross-disciplinary work, from novel 'surfactant-free' synthesis of Ir-Sn catalysts, theoretical simulations, and catalytic measurements to the characterizations of 'real' heterogeneous nanostructures, will not only highlight the intriguing structure-property correlations in nanosized catalysts but also have a transformative impact on the commercialization of DEFC technology by replacing Pt with low-cost, highly active Ir-based catalysts.

Du W.; Su D.; Wang Q.; Saxner D.; Deskins N.A.; Krzanowski J.E.; Frenkel A.I.; Teng X.

2011-08-03T23:59:59.000Z

59

Studies on transparent spinel magnesium indium oxide thin films prepared by chemical spray pyrolysis  

Science Journals Connector (OSTI)

Ternary semiconducting oxide compound magnesium indium oxide films (MgIn2O4), manifesting high transparency were prepared by metal organic chemical spray pyrolysis technique. Precursors prepared for various cationic ratios of Mg/In = 0.35, 0.40, 0.45 and 0.50 were thermally sprayed onto quartz substrates, decomposed at 450 °C and the spinel phase evolution was studied. X-ray diffraction, Rutherford backscattering and X-ray photoelectron spectroscopy studies have been conducted to confirm the formation of single-phase MgIn2O4 films with Mg/In ratio 0.50. From optical transmission studies, the observed optical band gaps varied from 3.18 to 3.86 eV (0.35 < Mg/In < 0.5). The electrical conductivity variations of these films were measured in the temperature range between 30 and 150 °C by four-probe technique (34.07–1.44 × 10? 5 S cm? 1) and the Hall coefficient showed n-type electrical conduction and high carrier concentration (0.16 × 1020–0.89 × 17 cm? 3).

A. Moses Ezhil Raj; V. Senthilkumar; V. Swaminathan; Joachim Wollschläger; M. Suendorf; M. Neumann; M. Jayachandran; C. Sanjeeviraja

2008-01-01T23:59:59.000Z

60

Optimized deposition and characterization of nanocrystalline magnesium indium oxide thin films for opto-electronic applications  

Science Journals Connector (OSTI)

Transparent conducting magnesium indium oxide films (MgIn2O4) were deposited on to quartz substrates without a buffer layer at an optimized deposition temperature of 450 °C to achieve high transmittance in the visible spectral range and electrical conductivity in the low temperature region. Magnesium ions are distributed over the tetrahedral and octahedral sites of the inverted spinel structure with preferential orientation along (3 1 1) Miller plane. The possible mechanism that promotes conductivity in this system is the charge transfer between the resident divalent (Mg2+) and trivalent (In3+) cations in addition to the available oxygen vacancies in the lattice. A room temperature electrical conductivity of 1.5 × 10?5 S cm?1 and an average transmittance >75% have been achieved. Hall measurements showed n-type conductivity with electron mobility value 0.95 × 10?2 cm2 V?1 s?1 and carrier concentration 2.7 × 1019 cm?3. Smoothness of the film surface observed through atomic force microscope measurements favors this material for gas sensing and opto-electronic device development.

A. Moses Ezhil Raj; C. Ravidhas; R. Ravishankar; A. Rathish Kumar; G. Selvan; M. Jayachandran; C. Sanjeeviraja

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

It's Elemental - The Element Indium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cadmium Cadmium Previous Element (Cadmium) The Periodic Table of Elements Next Element (Tin) Tin The Element Indium [Click for Isotope Data] 49 In Indium 114.818 Atomic Number: 49 Atomic Weight: 114.818 Melting Point: 429.75 K (156.60°C or 313.88°F) Boiling Point: 2345 K (2072°C or 3762°F) Density: 7.31 grams per cubic centimeter Phase at Room Temperature: Solid Element Classification: Metal Period Number: 5 Group Number: 13 Group Name: none What's in a name? Named after the bright indigo line in its spectrum. Say what? Indium is pronounced as IN-dee-em. History and Uses: Indium was discovered by the German chemists Ferdinand Reich and Hieronymus Theodor Richter in 1863. Reich and Richter had been looking for traces of the element thallium in samples of zinc ores. A brilliant indigo line in

62

In0,53Ga0.47Asp-i-n photodiodes with transparent cadmium tin oxide contacts  

E-Print Network [OSTI]

In0,53Ga0.47Asp-i-n photodiodes with transparent cadmium tin oxide contacts Paul R. Berger,a) Niloy for publication 28 July 1992) A new type of p-i-n In,,,,GaO,,,As photodiode having an optically transparent into the i-region is not relevant avoiding an increased dark current. The photodiodes exhibited leakage

63

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere  

SciTech Connect (OSTI)

An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200?°C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400?°C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan)] [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Lee, Dong-Hee [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Sakaguchi, Isao; Haneda, Hajime [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan)] [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)] [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Kamiya, Toshio [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Hosono, Hideo [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

2013-11-11T23:59:59.000Z

64

Novel methods of hydrogen production: aluminum-gallium-indium-tin systems and copper boron oxide as photocatalysts.  

E-Print Network [OSTI]

??In recent years, hydrogen production and storage has attracted a lot of attention in both academia and industry due to its variety of applications in… (more)

Lang, Yizhao

2011-01-01T23:59:59.000Z

65

Nanoscale Electrical Conductivity and Surface Spectroscopic Studies of Indium-Tin Oxide Yish-Hann Liau and Norbert F. Scherer*  

E-Print Network [OSTI]

enabled the Electronic and optoelectronic devices impact many areas of society, from simple household and optoelectronic devices OCTOBER 2006 | VOLUME 9 | NUMBER 1018 #12;creation of a host of structures with modulated

Scherer, Norbert F.

66

Electra-optic and all-optical phase modulator on an indium tin oxide single-mode waveguide  

E-Print Network [OSTI]

O, films are widely used in solar energy conversion, in optoelectronics, and in other branches demonstrated an In,O,:Sn semiconductor thin-film waveguide. The energy gap of the film can be manipulated from of optical wavelengths to be multiplexed with the carrier signal. The index of refraction of the Inz

Chen, Ray

67

Effect of oxidizer on grain size and low temperature DC electrical conductivity of tin oxide nanomaterial synthesized by gel combustion method  

SciTech Connect (OSTI)

Nanocrystalline Tin oxide material with different grain size was synthesized using gel combustion method by varying the fuel (C{sub 6}H{sub 8}O{sub 7}) to oxidizer (HNO{sub 3}) molar ratio by keeping the amount of fuel as constant. The prepared samples were characterized by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Analysis X-ray Spectroscopy (EDAX). The effect of fuel to oxidizer molar ratio in the gel combustion method was investigated by inspecting the grain size of nano SnO{sub 2} powder. The grain size was found to be reduced with the amount of oxidizer increases from 0 to 6 moles in the step of 2. The X-ray diffraction patterns of the calcined product showed the formation of high purity tetragonal tin (IV) oxide with the grain size in the range of 12 to 31 nm which was calculated by Scherer's formula. Molar ratio and temperature dependence of DC electrical conductivity of SnO{sub 2} nanomaterial was studied using Keithley source meter. DC electrical conductivity of SnO{sub 2} nanomaterial increases with the temperature from 80K to 300K. From the study it was observed that the DC electrical conductivity of SnO{sub 2} nanomaterial decreases with the grain size at constant temperature.

Rajeeva, M. P., E-mail: jayanna60@gmail.com; Jayanna, H. S., E-mail: jayanna60@gmail.com; Ashok, R. L.; Naveen, C. S. [Department of P.G. Studies and Research in Physics, Kuvempu University, Jnanasahyadri, Shankarghatta, Shimoga- 577451, Karnataka (India); Bothla, V. Prasad [Department of Physics, Indian Institute of Science, Bangalore-560012 (India)

2014-04-24T23:59:59.000Z

68

Magnesium indium oxide (MgIn2O4) spinel thin films: Chemical spray pyrolysis (CSP) growth and materials characterizations  

Science Journals Connector (OSTI)

MgIn2O4, which has an inverse spinel structure, has been adopted as the transparent material in optoelectronic device fabrication due to its high optical transparency and electrical conductivity. Such a technologically important material was prepared by the spray pyrolysis technique. Precursors prepared for the cationic ratio Mg/In = 0.5 were thermally sprayed onto glass substrates at 400 and 450?°C. We report herein the preparation and characterization of the films by X-ray diffraction (XRD), energy-dispersive absorption X-ray spectroscopy (EDAX), and atomic force microscopy (AFM). The XRD results showed the single phase formation of the material that revealed the presence of Mg2+ and In3+ in the inverse spinel-related structure. The FTIR and EDAX results further confirmed that the nanocrystalline films were mainly composed of magnesium, indium, and oxygen, in agreement with XRD analysis. We surmised from the AFM micrographs that the atoms have enough diffusion activation energy to occupy the correct site in the crystal lattice. For the 423-nm-thick magnesium indium oxide films grown at 400?°C, the electrical conductivity was 5.63 × 10 ?6   S cm ?1 and the average optical transmittance was 63% in the visible range (400–700 nm). Similar MgIn2O4 films deposited at 450?°C have a conductivity value of 1.5 × 10 ?5   S cm ?1 and an average transmittance of 75%. Hall coefficient observations showed n-type electrical conductivity and high electron carrier concentration of 2.7 × 10 19   cm ?3 .

A. Moses Ezhil Raj; G. Selvan; C. Ravidhas; M. Jayachandran; C. Sanjeeviraja

2008-01-01T23:59:59.000Z

69

Lithium intercalation in sputter deposited antimony-doped tin oxide thin films: Evidence from electrochemical and optical measurements  

SciTech Connect (OSTI)

Transparent conducting oxides are used as transparent electrical contacts in a variety of applications, including in electrochromic smart windows. In the present work, we performed a study of transparent conducting antimony-doped tin oxide (ATO) thin films by chronopotentiometry in a Li{sup +}-containing electrolyte. The open circuit potential vs. Li was used to investigate ATO band lineups, such as those of the Fermi level and the ionization potential, as well as the dependence of these lineups on the preparation conditions for ATO. Evidence was found for Li{sup +} intercalation when a current pulse was set in a way so as to drive ions from the electrolyte into the ATO lattice. Galvanostatic intermittent titration was then applied to determine the lithium diffusion coefficient within the ATO lattice. The electrochemical density of states of the conducting oxide was studied by means of the transient voltage recorded during the chronopotentiometry experiments. These measurements were possible because, as Li{sup +} intercalation took place, charge compensating electrons filled the lowest part of the conduction band in ATO. Furthermore, the charge insertion modified the optical properties of ATO according to the Drude model.

Montero, J., E-mail: jose.montero@angstrom.uu.se; Granqvist, C. G.; Niklasson, G. A. [Department of Engineering Sciences, The A°ngström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden); Guillén, C.; Herrero, J. [Department of Energy, Ciemat, Avda. Complutense 40, Ed. 42, E-28040 Madrid (Spain)

2014-04-21T23:59:59.000Z

70

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in  

E-Print Network [OSTI]

-abundant, non-toxic, and air-stable materials represent a promising class of photovoltaic (PV) devices for cost-effective manufacturing. Earth- abundant metal-oxide semiconductors comprise an attractive set of materials for photovoltaic applications, given their auspicious optoelec- tronic properties and chemical

71

Palladium and Tin Alloyed Catalysts for the Ethanol Oxidation Reaction in an Alkaline Medium  

SciTech Connect (OSTI)

In this paper, we present a study of a series of carbon-supported Pd-Sn binary alloyed catalysts prepared through a modified Polyol method as anode electrocatalysts for direct ethanol fuel cell reactions in an alkaline medium. Transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and aberration-corrected scanning transmission electron microscopy equipped with electron energy loss spectroscopy were used to characterize the Pd-Sn/C catalysts, where homogeneous Pd-Sn alloys were determined to be present with the surface Sn being partially oxidized. Among various Pd-Sn catalysts, Pd{sub 86}Sn{sub 14}/C catalysts showed much enhanced current densities in cyclic voltammetric and chronoamperometric measurements, compared to commercial Pd/C (Johnson Matthey). The overall rate law of ethanol oxidation reaction for both Pd{sub 86}Sn{sub 14}/C and commercial Pd/C were also determined, which clearly showed that Pd{sub 86}Sn{sub 14}/C was more favorable in high ethanol concentration and/or high pH environment. Density functional theory calculations also confirmed Pd-Sn alloy structures would result in lower reaction energies for the dehydrogenation of ethanol, compared to the pure Pd crystal.

Su D.; Du W.; Mackenzie K.E.; Milano D.F.; Deskins N.A.; Teng X.

2012-02-01T23:59:59.000Z

72

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanical Behavior of Indium Nanostructures Mechanical Behavior of Indium Nanostructures Print Wednesday, 26 May 2010 00:00 Indium is a key material in lead-free solder...

73

Ultrafine tin oxide on reduced graphene oxide as high-performance anode for sodium-ion batteries  

Science Journals Connector (OSTI)

Abstract Na-ion Battery is attractive alternative to Li-ion battery due to the natural abundance of sodium resource. Searching for suitable anode materials is one of the critical issues for Na-ion battery due to the low Na-storage activity of carbon materials. In this work, we synthesized a nanohybrid anode consisting of ultrafine SnO2 anchored on few-layered reduced graphene oxide (rGO) by a facile hydrothermal route. The SnO2/rGO hybrid exhibits a high capacity, long cycle life and good rate capability. The hybrid can deliver a high charge capacity of 324 mAh gSnO2?1 at 50 mA g?1. At 1600 mA g?1 (2.4C), it can still yield a charge capacity of 200 mAh gSnO2?1. After 100 cycles at 100 mA g?1, the hybrid can retain a high charge capacity of 369 mAh gSnO2?1. X-ray photoelectron spectroscopy, ex situ transmission electron microscopy and electrochemical impedance spectroscopy were used to investigate the origin of the excellent electrochemical Na-storage properties of SnO2/rGO.

Yandong Zhang; Jian Xie; Shichao Zhang; Peiyi Zhu; Gaoshao Cao; Xinbing Zhao

2015-01-01T23:59:59.000Z

74

Photovoltaic properties of ferroelectric solar cells based on polycrystalline BiFeO3 films sputtered on indium tin oxide substrates  

Science Journals Connector (OSTI)

To study the ferroelectric photovoltaic effect based on polycrystalline films, preparation of...3 (BFO) thin films with extremely large remnant polarization (2P r = 180 C/cm2...) were successfully d...

JianNing Ding; MengJiao Chen; JianHua Qiu…

2014-08-01T23:59:59.000Z

75

Indium tin oxide single-mode waveguide modulator Ray T. Chen, Dan Robinson, Huey Lu, Lev Sadovnik, and Zonh-Zen Ho  

E-Print Network [OSTI]

are widely used in solar energy conversion, in optoelectronics, and in other branches of technology. The wide ABSTRACT We have successfully demonstrated an 1n203:Sn semiconductor thin film waveguide. The energy gap a large number of optical wavelengths to be multiplexed with the carrier signal. The index of refraction

Chen, Ray

76

High-performance tin oxide-nitrogen doped graphene aerogel hybrids as anode materials for lithium-ion batteries  

Science Journals Connector (OSTI)

Abstract Tin dioxide nanoparticles on nitrogen doped graphene aerogel (SnO2-NGA) hybrid are synthesized by one-step hydrothermal method and successfully applied in lithium-ion batteries as a free-standing anode. The electrochemical performance of SnO2-NGA hybrid is investigated by galvanostatic charge–discharge cycling, rate capability test, cyclic voltammetry and electrochemical impedance spectroscopy. It is found that the SnO2-NGA hybrid with freestanding spongy-like structure exhibit remarkable lithium storage capacity (1100 mAh g?1 after 100 cycles), good cycling stability and high rate capability. The outstanding performance is attributed to the uniform SnO2 nanoparticles, unique spongy-like structure and N doping defect for Li+ diffusion.

Chunhui Tan; Jing Cao; Abdul Muqsit Khattak; Feipeng Cai; Bo Jiang; Gai Yang; Suqin Hu

2014-01-01T23:59:59.000Z

77

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended...

78

In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques  

E-Print Network [OSTI]

-type semiconductor metal oxide that has many applications in various fields due to its special optical, electrical capacity anode for next gen- eration lithium ion batteries.3,4 SnO2 can also be used as a catalyst typically around 10-2 cm. The adsorp- tion of O2 from air removes the electron charge carriers from

George, Steven M.

79

High performance robust F-doped tin oxide based oxygen evolution electro-catalysts for PEM based water electrolysis  

SciTech Connect (OSTI)

Identification and development of non-noble metal based electro-catalysts or electro-catalysts comprising compositions with significantly reduced amounts of expensive noble metal contents (e.g. IrO{sub 2}, Pt) with comparable electrochemical performance to the standard noble metal/metal oxide for proton exchange membrane (PEM) based water electrolysis would signify a major breakthrough in hydrogen generation via water electrolysis. Development of such systems would lead to two primary outcomes: first, a reduction in the overall capital costs of PEM based water electrolyzers, and second, attainment of the targeted hydrogen production costs (<$3.00/gge delivered by 2015) comparable to conventional liquid fuels. In line with these goals, by exploiting a two-pronged theoretical first principles and experimental approach herein, we demonstrate for the very first time a solid solution of SnO{sub 2}:10 wt% F containing only 20 at.% IrO{sub 2} [e.g. (Sn{sub 0.80}Ir{sub 0.20})O{sub 2}:10F] displaying remarkably similar electrochemical activity and comparable or even much improved electrochemical durability compared to pure IrO{sub 2}, the accepted gold standard in oxygen evolution electro-catalysts for PEM based water electrolysis. We present the results of these studies.

Datta, Moni Kanchan; Kadakia, Karan; Velikokhatnyi, Oleg I.; Jampani, Prashanth H.; Chung, Sung Jae; Poston, James A.; Manivannan, Ayyakkannu; Kumta, Prashant N.

2013-01-01T23:59:59.000Z

80

The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route  

SciTech Connect (OSTI)

Graphical abstract: Display Omitted Highlights: ? Synthesis of cadmium and tin telluride. ? Chemical route to obtain pure crystalline cadmium and tin telluride. ? Effect of the annealing temperature on the crystalline phases. ? Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

Mesquita, Anderson Fuzer [Departamento de Química, CCE, Universidade Federal do Espírito Santo, Campus Goiabeiras, 29075-910 Vitória, Espírito Santo (Brazil)] [Departamento de Química, CCE, Universidade Federal do Espírito Santo, Campus Goiabeiras, 29075-910 Vitória, Espírito Santo (Brazil); Porto, Arilza de Oliveira, E-mail: arilzaporto@yahoo.com.br [Departamento de Química, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais (Brazil); Magela de Lima, Geraldo [Departamento de Química, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais (Brazil)] [Departamento de Química, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais (Brazil); Paniago, Roberto [Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais (Brazil)] [Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais (Brazil); Ardisson, José Domingos [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN/CNEN, Belo Horizonte, Minas Gerais (Brazil)] [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN/CNEN, Belo Horizonte, Minas Gerais (Brazil)

2012-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films  

DOE Patents [OSTI]

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

2014-11-04T23:59:59.000Z

82

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanical Behavior of Indium Nanostructures Print Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of Waterloo, California Institute of Technology, and Los Alamos National Laboratory have collaborated with a team at ALS Beamline 12.3.2 to investigate the small-scale mechanics of indium nanostructures. Scanning x-ray microdiffraction (μSXRD) studies revealed that the indium microstructure is typical of a well-annealed metal, containing very few initial dislocations and showing close-to-theoretical strength.

83

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanical Behavior of Indium Nanostructures Print Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of Waterloo, California Institute of Technology, and Los Alamos National Laboratory have collaborated with a team at ALS Beamline 12.3.2 to investigate the small-scale mechanics of indium nanostructures. Scanning x-ray microdiffraction (μSXRD) studies revealed that the indium microstructure is typical of a well-annealed metal, containing very few initial dislocations and showing close-to-theoretical strength.

84

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanical Behavior of Indium Nanostructures Print Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of Waterloo, California Institute of Technology, and Los Alamos National Laboratory have collaborated with a team at ALS Beamline 12.3.2 to investigate the small-scale mechanics of indium nanostructures. Scanning x-ray microdiffraction (μSXRD) studies revealed that the indium microstructure is typical of a well-annealed metal, containing very few initial dislocations and showing close-to-theoretical strength.

85

A Method to Increase Current Density in a Mono Element Internal Tin Processed Superconductor Utilizing Zr Oxide to Refine Grain Size  

SciTech Connect (OSTI)

The effect of Oxygen on (Nb1Zr)3Sn multifilament conductors manufactured by the Mono Element Internal Tin (MEIT) process was explored to improve the current density by refining the grain size. This followed work first done by General Electric on the Nb3Sn tape process. Techniques to fabricate the more difficult Nb1Zr composites are described and allowed fabrication of long lengths of .254 mm diameter wire from an 88.9 mm diameter billet. Oxygen was incorporated through the use of SnO2 mixed with tin powder and incorporated into the core. These were compared to samples with Ti+Sn and Cu+Sn cores. Heat treatments covered the range of 700 C to 1000 C. Current density vs. H, grain size, and reaction percentages are provided for the materials tested. The Oxygen gave superior results in the temperature range of 815-1000 C. It also stabilized the filament geometry of the array in comparison to the other additions at the higher temperatures. At 815 C a peak in layer Jc yielded values of 2537 A/mm2 at 12 T and 1353 A/mm2 at 15T, 8-22% and 30-73% greater respectively than 700 C values. Results with Oxygen at high temperature show the possibility of high speed continuous reaction of the composite versus the current batch or react in place methods. In general the Ti additions gave superior results at the lower reaction temperature. Future work is suggested to determine if the 815 C reaction temperature can lead to higher current density in high tin (Nb1Zr+Ox)3Sn conductors. A second technique incorporated oxygen directly into the Nb1Zr rods through heat treatment with Nb2O5 at 1100 C for 100 hours in vacuum prior to extrusion. The majority of the filaments reduced properly in the composite but some local variations in hardness led to breakage at smaller diameters.

Bruce A. Zeitlin, Eric Gregory

2008-04-07T23:59:59.000Z

86

Liquid Tin Anode Direct Coal Fuel Cell - CellTech Power  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Liquid Tin Anode Direct Coal Liquid Tin Anode Direct Coal Fuel Cell-CellTech Power Background Direct carbon solid oxide fuel cells (SOFCs) offer a theoretical efficiency advantage over traditional SOFCs operating on gasified carbon (syngas). CellTech Power LLC (CellTech) has been developing a liquid tin anode (LTA) SOFC that can directly convert carbonaceous fuels including coal into electricity without gasification. One of the most significant impediments

87

Sputtering of tin and gallium-tin clusters  

SciTech Connect (OSTI)

Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.

Lill, T.; Calaway, W.F.; Ma, Z.; Pellin, M.J.

1994-08-01T23:59:59.000Z

88

Indium Fluor Sauerstoff Kulturleistung Chemie  

E-Print Network [OSTI]

In F O 49 9 8 Indium Fluor Sauerstoff Kulturleistung Chemie Tag der Chemie Samstag, 18. Juni 2011;Liebe Besucherin, lieber Besucher Hiermit möchten wir Sie herzlich zu unserem «Tag der Chemie» auf dem Experimental- vorführung spannender und verblüffender Phänomene aus der Chemie. Für die Kinder, die gern einmal

Zürich, Universität

89

On the solar abundance of indium  

E-Print Network [OSTI]

The generally adopted value for the solar abundance of indium is over six times higher than the meteoritic value. We address this discrepancy through numerical synthesis of the 451.13 nm line on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure and Zeeman splitting in detail. The results, as well as a re-appraisal of indium nucleosynthesis, suggest that the solar indium abundance is close to the meteoritic value, and that some unidentified ion line causes the 451.13 nm feature in the quiet-sun spectrum.

N. Vitas; I. Vince; M. Lugaro; O. Andriyenko; M. Gosic; R. J. Rutten

2007-11-14T23:59:59.000Z

90

Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Form (VOSF) and Layered Indium Selenide Thin Film Deposition by Laser Back Ablation. Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film Deposition by...

91

On the solar abundance of indium  

Science Journals Connector (OSTI)

......we suggest that the solar indium abundance is close...line at high excitation energy from a species with low-first ionization energy. 1 http://nuclear-astrophysics...our attention to the solar indium abundance, and...Fig. 8. This research project has been supported by......

N. Vitas; I. Vince; M. Lugaro; O. Andriyenko; M. Gosic; R. J. Rutten

2008-02-11T23:59:59.000Z

92

Chelated Indium Activable Tracers for Geothermal Reservoirs  

E-Print Network [OSTI]

SGP-TR-99 Chelated Indium Activable Tracers for Geothermal Reservoirs Constantinos V. Chrysikopoulos Paul Kruger June 1986 Financial support was provided through the Stanford Geothermal Program under University Stanford Geothermal Program Interdisciplinary Research in Engineering and Earth Sciences STANFORD

Stanford University

93

Thin-film tin oxideâ??ethanol sensor  

Science Journals Connector (OSTI)

Tin Oxide (SnO2) thin films grown on glass substrate at 648 K using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-1000 ppm). The operating temperature of the sensor was optimised. The sensitivity variation of films having different thicknesses was studied. To improve the sensitivity and selectivity further, a thin layer of metal oxide was deposited on the sensor surface to work as a catalytic layer and its effect on the performance of the sensor was studied. The response and recovery times of the sensor were determined.

H.J. Pandya

2009-01-01T23:59:59.000Z

94

Immobilization of azurin with retention of its native electrochemical...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Indium tin oxide (ITO) is a promising material for developing spectroelectrochemical methods due to its combination of excellent transparency in the visible region and high...

95

Effect of geometric lattice design on optical/electrical properties of transparent silver grid for organic solar cells  

Science Journals Connector (OSTI)

Silver (Ag) grid transparent electrode is one of the most promising transparent conducting electrodes (TCEs) to replace conventional indium tin oxide (ITO). We systematically...

Lim, Ju Won; Lee, Young Tack; Pandey, Rina; Yoo, Tae-Hee; Sang, Byoung-In; Ju, Byeong-Kwon; Hwang, Do Kyung; Choi, Won Kook

2014-01-01T23:59:59.000Z

96

Optical design of transparent metal grids for plasmonic absorption enhancement in ultrathin organic solar cells  

Science Journals Connector (OSTI)

Transparent metal grid combining with plasmonic absorption enhancement is a promising replacement to indium tin oxide thin films. We numerically demonstrate metal grids in one or two...

Kim, Inho; Lee, Taek Seong; Jeong, Doo Seok; Lee, Wook Seong; Kim, Won Mok; Lee, Kyeong-Seok

2013-01-01T23:59:59.000Z

97

Indium in co-existing minerals from the Mount Pleasant tin deposit  

Science Journals Connector (OSTI)

...i E > i l q ' R E F 5 8 E"'i e 8t; * F N *., itsd; t r i i. t o. o q b r eErE.5o q o F tEa69 HiEE-!d# 6-?Ep t s = o * {ffd5d' x q o E:1 5 U Y'C'rEn 6 q ? I E'6EI d F...

R. S. Boorman; D. Abbott

98

Thermal Stability of Chelated Indium Activable Tracers  

SciTech Connect (OSTI)

The thermal stability of indium tracer chelated with organic ligands ethylenediaminetetraacetic acid (EDTA) and nitrilotriacetic acid (NTA) was measured for reservoir temperatures of 150, 200, and 240 C. Measurements of the soluble indium concentration was made as a function of time by neutron activation analysis. From the data, approximate thermal decomposition rates were estimated. At 150 C, both chelated tracers were stable over the experimental period of 20 days. At 200 C, the InEDTA concentration remained constant for 16 days, after which the thermal decomposition occurred at a measured rate constant of k = 0.09 d{sup -1}. The thermal decomposition of InNTA at 200 C showed a first order reaction with a measured rate constant of k = 0.16 d{sup -1}. At 240 C, both indium chelated tracers showed rapid decomposition with rate constants greater than 1.8 d{sup -1}. The data indicate that for geothermal reservoir with temperatures up to about 200 C, indium chelated tracers can be used effectively for transit times of at least 20 days. These experiments were run without reservoir rock media, and do not account for concomitant loss of indium tracer by adsorption processes.

Chrysikopoulos, Costas; Kruger, Paul

1986-01-21T23:59:59.000Z

99

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting  

SciTech Connect (OSTI)

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology.

Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sören; Jessen, Frank; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

2011-01-02T23:59:59.000Z

100

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting  

SciTech Connect (OSTI)

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology. The primary objective of this project was to develop a commercially viable process for 'Substrates' (Substrate/ undercoat/ TCO topcoat) to be used in production of OLED devices (lamps/luminaries/modules). This project focused on using Arkema's recently developed doped ZnO technology for the Fenestration industry and applying the technology to the OLED lighting industry. The secondary objective was the use of undercoat technology to improve light extraction from the OLED device. In optical fields and window applications, technology has been developed to mitigate reflection losses by selecting appropriate thicknesses and refractive indices of coatings applied either below or above the functional layer of interest. This technology has been proven and implemented in the fenestration industry for more than 15 years. Successful completion of

Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

2011-01-02T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Therapeutic tin-117m compositions  

DOE Patents [OSTI]

The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Mausner, Leonard F. (Stony Brook, NY); Atkins, Harold L. (Setauket, NY)

2003-01-01T23:59:59.000Z

102

A Low Temperature Fully Lithographic Process For Metal–Oxide Field-Effect Transistors  

E-Print Network [OSTI]

We report a low temperature ( ~ 100à °C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene, ...

Sodini, Charles G.

103

Infrared Images of Shock-Heated Tin  

SciTech Connect (OSTI)

High-resolution, gated infrared images were taken of tin samples shock heated to just below the 505 K melting point. Sample surfaces were either polished or diamond-turned, with grain sizes ranging from about 0.05 to 10 mm. A high explosive in contact with a 2-mm-thick tin sample induced a peak sample stress of 18 GPa. Interferometer data from similarly-driven tin shots indicate that immediately after shock breakout the samples spall near the free (imaged) surface with a scab thickness of about 0.1 mm.

Craig W. McCluskey; Mark D. Wilke; William D. Turley; Gerald D. Stevens; Lynn R. Veeser; Michael Grover

2004-09-01T23:59:59.000Z

104

Atomic Heat of Indium below 20°K  

Science Journals Connector (OSTI)

A calorimetric technique in which a carbon-composition resistor serves simultaneously as both heater and thermometer has been developed and is described briefly. Using this technique, the atomic heat of indium has been measured in the normal state from 1.7°K to 21.3°K and in the superconducting state from 1.8°K to 3.396°K, the transition temperature in zero magnetic field. Tables of smoothed values are given. A method of deducing the separate lattice and electronic contributions to the heat capacities, based on several empirically and/or theoretically tenable assumptions, has been developed and is described in some detail. This method of analysis, when applied to the indium data, led to the conclusion that a cubic analytic form for the critical magnetic field equation would allow conclusions consistent with all the assumptions but that the more commonly used parabolic form would not. Numerical values are given for the constants involved. The temperature dependence of the Debye characteristic temperature of the indium lattice over the entire range of measurement is shown to follow the theoretically expected behavior.

J. R. Clement and E. H. Quinnell

1953-10-15T23:59:59.000Z

105

Reduction And Stabilization (Immobilization) Of Pertechnetate To An Immobile Reduced Technetium Species Using Tin(II) Apatite  

SciTech Connect (OSTI)

Synthetic tin(II)apatite reduces pertechnetate from the mobile +7 to a non-mobile oxidation state and sequesters the technetium, preventing re-oxidization to mobile +7 state under acidic or oxygenated conditions. Previous work indicated technetium reacted Sn(II)apatite can achieve an ANSI leachability index of 12.8 in Cast Stone. An effect by pH is observed on the distribution coefficient, the highest distribution coefficient being l70,900 observed at pH levels of 2.5 to 10.2. The tin apatite was resistant to releasing technetium under test conditions.

Duncan, J. B.

2012-11-02T23:59:59.000Z

106

NREL: Process Development and Integration Laboratory - Copper Indium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Copper Indium Gallium Diselenide Cluster Tool Capabilities Copper Indium Gallium Diselenide Cluster Tool Capabilities The Copper Indium Gallium Diselenide (CIGS) cluster tool in the Process Development and Integration Laboratory offers powerful capabilities with integrated chambers for depositing, processing, measuring, and characterizing photovoltaic materials and devices. You can read more on the rationale for developing this cluster tool and its capabilities, and check out the National Solar Technology Roadmap for CIGS Photovoltaics. Contact Miguel Contreras for more details on these capabilities. The Copper Indium Gallium Diselenide cluster tool, manufactured by DCA Instruments, will be operational in 2009. Techniques will include evaporation; radiofrequency, direct-current (DC), and pulsed DC sputtering;

107

Design and fabrication of a tin-sulfide annealing furnace  

E-Print Network [OSTI]

A furnace was designed and its heat transfer properties were analyzed for use in annealing thin-film tins-ulfide solar cells. Tin sulfide has been explored as an earth abundant solar cell material, and the furnace was ...

Lewis, Raymond (Raymond A.)

2011-01-01T23:59:59.000Z

108

Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnOx, x 02) Particles  

E-Print Network [OSTI]

Engineering, University of Michigan, Ann Arbor, Michigan 48109-2125 Nanocrystalline SnOx particles (x 0 solar cells,9 ­11 liquid crystal displays,10,11 photodetec- tors,6,11 and video touch screens,10 to name

Wooldridge, Margaret S.

109

Microstructural development and mechanical behavior of eutectic bismuth-tin and eutectic indium-tin in response to high temperature deformation  

SciTech Connect (OSTI)

The mechanical behavior and microstructure of eutectic Bi-Sn and In-Sn solders were studied in parallel in order to better understand high temperature deformation of these alloys. Bi-Sn solder joints were made with Cu substrates, and In-Sn joints were made with either Cu or Ni substrates. The as-cast microstructure of Bi-Sn is complex regular, with the two eutectic phases interconnected in complicated patterns. The as-cast microstructure of In-Sn depends on the substrate. In-Sn on Cu has a non-uniform microstructure caused by diffusion of Cu into the solder during sample preparation, with regions of the Sn-rich {gamma} phase imbedded in a matrix of the In-rich {beta} phase. The microstructure of In-Sn on Ni is uniform and lamellar and the two phases are strongly coupled. The solders deform non-uniformly, with deformation concentrating in a band along the length of the sample for Bi-Sn and In-Sn on Cu, though the deformation is more diffuse in In-Sn than in Bi-Sn. Deformation of In-Sn on Ni spreads throughout the width of the joint. The different deformation patterns affect the shape of the stress-strain curves. Stress-strain curves for Bi-Sn and In-Sn on Cu exhibit sharp decays in the engineering stress after reaching a peak. Most of this stress decay is removed for In-Sn on Ni. The creep behavior of In-Sn also depends on the substrate, with the creep deformation controlled by the soft P phase of the eutectic for In-Sn on Cu and controlled by the harder {gamma} phase for In-Sn on Ni. When In-Sn on Ni samples are aged, the microstructure coarsens and changes to an array of {gamma} phase regions in a matrix of the {beta} phase, and the creep behavior changes to resemble that of In-Sn on Cu. The creep behavior of Bi-Sn changes with temperature. Two independent mechanisms operate at lower temperatures, but there is still some question as to whether one or both of these, or a third mechanism, operates at higher temperatures.

Goldstein, J.L.F. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering; [Lawrence Berkeley Lab., CA (United States)

1993-11-01T23:59:59.000Z

110

The natural and industrial cycling of indium in the environment  

E-Print Network [OSTI]

Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling ...

White, Sarah Jane O'Connell

2012-01-01T23:59:59.000Z

111

Characterization of Optical Coatings for Artwork Protection by Means of Neutron Reflectometry  

Science Journals Connector (OSTI)

A multilayer coating on a glass pane, specifically designed for artwork protection, has been designed. The materials selected for the coating are SiO2 (silicon oxide), TiO2...(titanium oxide) and ITO (indium tin ...

I. DI Sarcina; A. Menelle; E. Nichelatti…

2006-01-01T23:59:59.000Z

112

2009 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

concentrates. Lithic Resources Ltd. (Vancouver, British Columbia, Canada), however, announced a new resource toward the prefeasibility stage (Lithic Resources Ltd., 2009). Indium metal was not produced, indium tin oxide (ITO) coatings, solders, and other indium products. Recycling A large portion of global

113

Tin oxide nanorods DOI: 10.1002/smll.200500210  

E-Print Network [OSTI]

suggests that the shape and curved tips are important factors in determin- ing the FE properties. Keywords . The effect of shape of SnO2 nanostructures on the field emission proper- ties has been fully investigated. Theoretical calculation has been carried out to find out whether there is a correlation between surface energy

Wang, Zhong L.

114

Transparent Conducting Aerogels of Antimony-Doped Tin Oxide  

Science Journals Connector (OSTI)

Previously,(28) we cast ATO aerogels as thin films and prepared DSCs by coating the mesoporous nanostructure with TiO2 by atomic layer deposition and demonstrated improved performance in the presence of an electron shuttle with fast recombination, indicating advantageous electron collection by the conducting aerogel. ... At. layer deposition was employed to coat the aerogel template conformally with various thicknesses of TiO2 with sub-nanometer precision. ... The TiO2-coated aerogel membranes were incorporated as photoanodes in dye-sensitized solar cells. ...

Juan Pablo Correa Baena; Alexander G. Agrios

2014-10-08T23:59:59.000Z

115

Exhaust Gas Sensor Based On Tin Dioxide For Automotive Application  

E-Print Network [OSTI]

Exhaust Gas Sensor Based On Tin Dioxide For Automotive Application Arthur VALLERON a,b , Christophe, Engineering Materials Department The aim of this paper is to investigate the potentialities of gas sensor based on semi-conductor for exhaust gas automotive application. The sensing element is a tin dioxide

Paris-Sud XI, Université de

116

Methane-water redox reaction on A2SnO4 (A=Mg, Ca, Sr, Ba) oxide to produce C2 hydrocarbons  

Science Journals Connector (OSTI)

A2BO4...type oxides consisting of an alkali earth metal and tin showed high selectivity (>99%) and activity for the oxidative coupling of methane at 1023 K in a methane-water redox system where active oxygen spec...

K. Omata; T. Ehara; I. Kawai; M. Yamada

117

E-Print Network 3.0 - adhesive wear behavior Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4 5 > >> 1 P-7 D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene Summary: studies. Cracking of the ITO layer and adhesive wear failure occurs in the...

118

Application of lasers in solar cell technologies  

Science Journals Connector (OSTI)

The possibilities for applying lasers to the fabrication of solar cells (the laser texturing of silicon surfaces and pulsed laser deposition of indium tin oxide (ITO) thin films) are demonstrated.

D. A. Zuev; A. A. Lotin; O. A. Novodvorsky…

2012-10-01T23:59:59.000Z

119

Single-Crystalline Branched Zinc Phosphide Nanostructures: Synthesis,  

E-Print Network [OSTI]

optoelectronic devices, including solar cells, flat panel displays, and light emitting diodes (LEDs). Most of the optoelectronic devices having a TC are fabricated on indium tin oxide (ITO) coated substrates because

Wang, Zhong L.

120

Investigation of short-range surface forces to develop self-organizing devices by Steven M. Tobias.  

E-Print Network [OSTI]

Force spectra from atomic force microscopy were used to verify surface energy components of indium tin oxide and mesocarbon microbeads. These materials were selected based on spectroscopic and thermodynamic parameters to ...

Tobias, Steven M., 1980-

2005-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-08-08T23:59:59.000Z

122

E-Print Network 3.0 - aluminium gallium indium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

An advanced diffusion model to identify emergent research issues: the case of optoelectronic devices Summary: Aluminium arsenides Ge-Si alloys Avalanche photodiodes Indium...

123

Silicon-based silicon–germanium–tin heterostructure photonics  

Science Journals Connector (OSTI)

...Bordas, GC Roelkens, HPMM Ambrosius, P Thijs, F Karouta, and MK Smit. 2011 Photonic integration in indium-phosphide membranes...Sorger, VJ , ND Lanzilloti-Kimura, RM Ma, and X Zhang. 2012 Ultra-compact silicon nanophotonic modulator with broadband response...

2014-01-01T23:59:59.000Z

124

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

125

Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium  

DOE Patents [OSTI]

Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2000-01-01T23:59:59.000Z

126

The effect of regimes and methods of glass forming on the tin content in float glass  

Science Journals Connector (OSTI)

The dependence of the tin content in glass is derived as a function of the iron oxidecontent in the glass composition, regimes and methods of forming, ... The ways of reducing the tin content in glass in the cour...

V. I. Kondrashov; V. S. Bezlyudnaya; Yu. V. Zverev

127

Effect of Capping Agents in Tin Nanoparticles on Electrochemical Cycling  

E-Print Network [OSTI]

on the particle surfaces. The cycling results using coin-type half cells confirmed that the hydrobenzamide, compared with the others. From Fourier transform magnitude FT of Sn LIII-edge energy dispersive X prepared by the decom- position of tin II amides, Sn NMe2 2 2, at 135°C in dry-anisole- produced particles

Cho, Jaephil

128

Head Knowledge: Summary (Segment from the Tin Shed essay)  

E-Print Network [OSTI]

, a world of objectivity, and his method of deductive logical reasoning, of John Locke (1632-1704) and his and objectification, material reductionism, quantification, gradation and secularization (Frey 1994: 95-104, 123 of reliability and validity (Frey 1994:95-104). While traveling outside the Tin Shed, systematic analysis

O'Laughlin, Jay

129

Substituents Dependent Capability of bis(ruthenium-dioxolene-terpyridine)Complexes Toward Water Oxidation  

SciTech Connect (OSTI)

The bridging ligand, 1,8-bis(2,2':6',2{double_prime}-terpyrid-4'-yl)anthracene (btpyan) was synthesized by the Miyaura-Suzuki cross coupling reaction of anthracenyl-1,8-diboronic acid and 4'-triflyl-2,2':6'-2{double_prime}-terpyridine in the presence of Pd(PPh{sub 3}){sub 4} (5 mol%) with 68% in yield. Three ruthenium-dioxolene dimers, [Ru{sub 2}(OH){sub 2}(dioxolene){sub 2}(btpyan)]{sup 0} (dioxolene = 3,6-di-tert-butyl-1,2-benzosemiquinone ([1]{sup 0}), 3,5-dichloro-1,2-benzosemiquinone ([2]{sup 0}) and 4-nitro-1,2-benzosemiquinone ([3]{sup 0})) were prepared by the reaction of [Ru{sub 2}Cl{sub 6}(btpyan)]{sup 0} with the corresponding catechol. The electronic structure of [1]{sup 0} is approximated by [Ru{sub 2}{sup II}(OH){sub 2}(sq){sub 2}(btpyan)]{sup 0} (sq = semiquinonato). On the other hand, the electronic states of [2]{sup 0} and [3]{sup 0} are close to [Ru{sub 2}{sup III}(OH){sub 2} (cat){sub 2}(btpyan)]{sup 0} (cat = catecholato), indicating that a dioxolene having electron-withdrawing groups stabilizes [Ru{sub 2}{sup III}(OH){sub 2}(cat){sub 2}(btpyan)]{sup 0} rather than [Ru{sub 2}{sup II}(OH){sub 2}(sq){sub 2}(btpyan)]{sup 0} as resonance isomers. No sign was found of deprotonation of the hydroxo groups of [1]{sup 0}, whereas [2]{sup 0} and [3]{sup 0} showed an acid-base equilibrium in treatments with t-BuOLi followed by HClO{sub 4}. Furthermore, controlled potential electrolysis of [1]{sup 0} deposited on an ITO (indium-tin oxide) electrode catalyzed the four-electron oxidation of H{sub 2}O to evolve O{sub 2} at potentials more positive than +1.6 V (vs. SCE) at pH 4.0. On the other hand, the electrolysis of [2]{sup 0} and [3]{sup 0} deposited on ITO electrodes did not show catalytic activity for water oxidation under similar conditions. Such a difference in the reactivity among [1]{sup 0}, [2]{sup 0} and [3]{sup 0} is ascribed to the shift of the resonance equilibrium between [Ru{sub 2}{sup II}(OH){sub 2}(sq){sub 2}(btpyan)]{sup 0} and [Ru{sub 2}{sup III}(OH){sub 2}(cat){sub 2}(btpyan)]{sup 0}.

Wada, T.; Muckerman, J.; Fujita, E.; Tanaka, K.

2010-12-23T23:59:59.000Z

130

Synthesis of indium sulphide quantum dots in perfluoronated ionomer membrane  

SciTech Connect (OSTI)

In this paper, we demonstrate a simple and efficient method for synthesis of ?-indium sulphide (In{sub 2}S{sub 3}) nanoparticles embedded in an ionomer matrix (nafion membrane). The influence of reaction temperature on structural, compositional and optical properties of these films were analysed using X-Ray Diffraction, EDAX, UV-Vis absorption spectroscopy and photoluminescence studies. Average particle diameter was estimated using modified effective mass approximation method. Absorption spectra of In{sub 2}S{sub 3} nanoparticles show blue shift compared to bulk In{sub 2}S{sub 3}, indicating strong quantum size confinement effects. PL emission in the wavelength range 530–600 nm was recorded using a 488 nm line from an Ar{sup +} laser as the excitation source.

Sumi, R. [Centre for Nanotechnology Research, VIT University, Vellore (India); Warrier, Anita R.; Vijayan, C. [Department of Physics, Indian Institute of Technology, Chennai (India)

2014-01-28T23:59:59.000Z

131

Photoconductivity in reactively evaporated copper indium selenide thin films  

SciTech Connect (OSTI)

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

2014-01-28T23:59:59.000Z

132

Structure–Diffusion Relationship of Magnetron-Sputtered WTi Barriers Used in Indium Interconnections  

Science Journals Connector (OSTI)

Tungsten-titanium (WTi) thin films are known as potential adhesion ... and diffusion barriers. The barrier efficiency of WTi thin films against indium (In) diffusion...in situ...annealing. Specific multilayered s...

A. Le Priol; E. Le Bourhis; P.-O. Renault; P. Muller…

2014-03-01T23:59:59.000Z

133

Structural and dielectrical studies on mechano-chemically synthesized indium doped CdS nanopowders  

Science Journals Connector (OSTI)

Incorporation of indium (dopant) into CdS crystals have been successfully achieved by a ... ray diffraction (XRD) analysis of milled In doped CdS compound showed that the major phase of ... good pathway to identi...

B. J. Babu; S. Velumani; A. Kassiba

2011-08-01T23:59:59.000Z

134

Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)  

SciTech Connect (OSTI)

Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

135

Full-potential linear muffin-tin-orbital method  

Science Journals Connector (OSTI)

A new band-structure method which allows the self-consistent solution of the Schrödinger equation with a full (all-electron, non-muffin-tin) crystal potential has been developed. A basis set consisting of the 9 (16) s, p, and d (f) linear-muffin-tin orbitals per site is used. The wave functions as well as the electron density and the potential are split into a smooth ‘‘pseudo’’ part, which is expanded in plane waves, and local parts, which are expressed as spherical-harmonics one-center expansions. The total-energy functional of density-functional theory is evaluated without any shape approximation. The usefulness and accuracy of the method is demonstrated by applying it to a ‘‘frozen phonon’’ in silicon and comparing the results with experiment. The calculated phonon frequency and anharmonic term are in excellent agreement with the experimental data. The method is generally applicable to systems with delocalized as well as localized orbitals.

K. H. Weyrich

1988-06-15T23:59:59.000Z

136

Conductive Polymer Binder-Enabled Cycling of Pure Tin Nanoparticle  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Conductive Polymer Binder-Enabled Cycling of Pure Tin Nanoparticle Conductive Polymer Binder-Enabled Cycling of Pure Tin Nanoparticle Composite Anode Electrodes for a Lithium-Ion Battery Title Conductive Polymer Binder-Enabled Cycling of Pure Tin Nanoparticle Composite Anode Electrodes for a Lithium-Ion Battery Publication Type Journal Article Year of Publication 2013 Authors Xun, Shidi, Xiangyun Song, Vincent S. Battaglia, and Gao Liu Journal Journal of the Electrochemical Society Volume 160 Start Page A849 Issue 6 Pagination A849 - A855 Date Published 01/2013 ISSN 0013-4651 Abstract Pure tin (Sn) nanoparticles can be cycled in stable and high gravimetric capacity (>500 mAh/g) with a polyfluorene-type conductive polymer binder in composite electrodes. Crystalline Sn nanoparticles (<150 nanometers, nm) were used as anode materials in this study. The average diameter of Sn secondary particles is 270 nm, calculated based on BET surface area. The composite electrodes contain a conductive polymer binder that constitutes 2% to 10% of the material, without any conductive additives (e.g., acetylene black). The electrode containing the 5% conductive binder showed the best cycling performance, with a reversible capacity of 510 mAh/g. Crystallinity of Sn particles gradually degrades during cycling, and pulverization of particles was observed after long-term cycling, leading to the capacity fade. The conductive polymer binder shows advantages over other conventional binders, such as Poly(vinylidene difluoride) (PVDF) and carboxymethylcellulose (CMC) binders, because it can provide electrical conductivity and strong adhesion during Sn volume change.

137

High-frequency losses in tin Josephson tunnel junctions  

Science Journals Connector (OSTI)

The losses associated with the excitation of surface plasma oscillations in Fiske modes in tin Josephson junctions, at frequencies from 20 to 270 GHz, were measured by studying the currentvoltage characteristics as a function of magnetic field. Our results generally support Economou and Ngai's theory of surface-plasma oscillations and Miller's calculation of the conductivity of superconductors. At lower temperatures, discrepancies that include an anomalous peak in the frequency dependence of the loss may reflect a small disagreement with Miller's results.

T. C. Wang and R. I. Gayley

1978-07-01T23:59:59.000Z

138

Differential Neutron Scattering Cross Sections and Average Neutron Parameters of Tin Isotopes  

Science Journals Connector (OSTI)

The differential cross sections of elastically scattered neutrons were measured for tin isotopes at the...o, s 1/2 1 , S 1/3 ...

V. G. Nikolenko; A. B. Popov; G. S. Samosvat

1983-01-01T23:59:59.000Z

139

(Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing  

E-Print Network [OSTI]

were exported to Canada for processing. Two companies, one in New York and the other in Rhode Island for the recycling industry to handle because of large capital costs, environmental restrictions, and storage space gallium diselenide (CIGS) solar cells require approximately 50 metric tons of indium to produce 1 gigawatt

140

(Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2009. Indium-containing  

E-Print Network [OSTI]

, Japan, and the Republic of Korea--the countries where ITO production and sputtering take place. An LCD tailings viable when the price of indium is high. Import Sources (2005-08):1 China, 40%; Japan, 19%; Canada where exports of flat panels rose significantly owing to China's household appliance subsidy program

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Characterization of Sodium Ion Electrochemical Reaction with Tin Anodes: Experiment and Theory  

SciTech Connect (OSTI)

Tin anodes show a rich structure and reaction chemistry which we have investigated in detail. Upon discharge five plateaus are observed corresponding to -Sn, an unidentified phase (Na/Sn = 0.6), an amorphous phase (Na/Sn = 1.2), a hexagonal R-3m Na5Sn2, and fully sodiated Na15Sn 4. With charging there are six plateaus, which are related to the formation of Na5Sn2 followed by the formation of amorphous phases and -Sn. Upon cycling the formation of metastable Na5Sn2 seems to be suppressed, leading to a single charge plateau at 0.2 V. Theoretical voltages calculated from existing crystal structures using DFT provide a good match with constant current measurements, however, the voltage is more negative compared to quasi-equilibrium measurements (GITT). Search for additional (meta)stable phases using cluster-expansion method predicts many phases lower in energy than the convex hull, including the R-3m Na5Sn2 phase characterized experimentally. The presence of multiple phases in varying lattices with very similar formation energy suggests why the reaction mechanism is non-reversible. Interpretation of M ssbauer spectroscopy data is not yet elucidated due to the very low recoil-free fraction of the materials. The electrode surface is terminated with a SEI layer rich in carbonates such as Na2CO3 and Na alkyl carbonates as evidenced by XPS. After a full charge at 2V, strong evidence for the formation of oxidized Sn4+ is obtained. Subjecting the electrode to a rest after a full charge at 2 V reveals that aging in the electrolyte reduces the oxidized Sn4+ into Sn2+ and Sn0, and concomitantly suppresses the electrolyte decomposition represented by an anomalous discharge plateau at 1.2 V. Thereby, the catalytic decomposition of the electrolyte during discharge is caused by nanosized Sn particles covered by oxidized Sn4+ and not by pure metallic Sn.

Baggetto, Loic [ORNL] [ORNL; Meisner, Roberta A [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL)] [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Ganesh, Panchapakesan [ORNL] [ORNL; Unocic, Raymond R [ORNL] [ORNL; Bridges, Craig A [ORNL] [ORNL; Jumas, Dr. Jean-Claude [Institut Charles Gerhardt, University of Montpellier II, FRANCE] [Institut Charles Gerhardt, University of Montpellier II, FRANCE; Veith, Gabriel M [ORNL] [ORNL

2013-01-01T23:59:59.000Z

142

Deposition of TiN and HfO{sub 2} in a commercial 200 mm remote plasma atomic layer deposition reactor  

SciTech Connect (OSTI)

The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL trade mark sign ) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200 mm in diameter. The deposition of titanium nitride (TiN) and hafnium oxide (HfO{sub 2}) is described for the combination of the metal-halide precursor TiCl{sub 4} and H{sub 2}-N{sub 2} plasma and the combination of the metallorganic precursor Hf[N(CH{sub 3})(C{sub 2}H{sub 5})]{sub 4} and O{sub 2} plasma, respectively. The influence of the plasma exposure time and substrate temperature has been studied and compositional, structural, and electrical properties are reported. TiN films with a low Cl impurity content were obtained at 350 deg. C at a growth rate of 0.35 A /cycle with an electrical resistivity as low as 150 {mu}{omega} cm. Carbon-free (detection limit <2 at. %) HfO{sub 2} films were obtained at a growth rate of 1.0 A /cycle at 290 deg. C. The thickness and resisitivity nonuniformity was <5% for the TiN and the thickness uniformality was <2% for the HfO{sub 2} films as determined over 200 mm wafers.

Heil, S. B. S.; Hemmen, J. L. van; Hodson, C. J.; Singh, N.; Klootwijk, J. H.; Roozeboom, F.; Sanden, M. C. M. van de; Kessels, W. M. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Yatton BS49 4AP (United Kingdom); Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); NXP Semiconductors Research, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

2007-09-15T23:59:59.000Z

143

Highly transparent Nb-doped indium oxide electrodes for organic solar cells  

SciTech Connect (OSTI)

The authors investigated the characteristics of Nb-doped In{sub 2}O{sub 3} (INbO) films prepared by co-sputtering of Nb{sub 2}O{sub 5} and In{sub 2}O{sub 3} for use in transparent anodes for organic solar cells (OSCs). To optimize the Nb dopant composition in the In{sub 2}O{sub 3} matrix, the effect of the Nb doping power on the resistivity and transparency of the INbO films were examined. The electronic structure and microstructure of the INbO films were also investigated using synchrotron x-ray absorption spectroscopy and x-ray diffraction examinations in detail. At the optimized Nb co-sputtering power of 30?W, the INbO film exhibited a sheet resistance of 15??/sq, and an optical transmittance of 86.04% at 550?nm, which are highly acceptable for the use as transparent electrodes in the fabrication of OSCs. More importantly, the comparable power conversion efficiency (3.34%) of the OSC with an INbO anode with that (3.31%) of an OSC with a commercial ITO anode indicates that INbO films are promising as a transparent electrode for high performance OSCs.

Kim, Jun Ho; Seong, Tae-Yeon [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Na, Seok-In [Professional Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeongju-si, Jellabuk-do 561-756 (Korea, Republic of); Chung, Kwun-Bum [Department of Physics, Dankook University, Mt. 29, Anseo-Dong, Chenan 330-714 (Korea, Republic of); Lee, Hye-Min; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong, Yongin, Gyeonggi-do 446-701 (Korea, Republic of)

2014-03-15T23:59:59.000Z

144

Indium-Vanadium Oxides Deposited by Radio Frequency Sputtering: New Thin Film Transparent  

E-Print Network [OSTI]

in order to determine their possible applications in electrochromic devices as optically passive ion-vis-NIR transmittance and reflectance modes, have demonstrated that films are electrochromic, but the presence in electrochromic devices (ECD) with variable light transmission ("smart windows").2,3 As has been demonstrated

Artuso, Florinda

145

Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique  

SciTech Connect (OSTI)

In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

2011-04-15T23:59:59.000Z

146

Highly efficient blue organic light emitting devices with indium...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

zinc oxide (GZO) uniformly over a 12” diameter area at room temperature on polyethylene terephthalate (PET). During deposition, the system heats to about 60oC due to the...

147

An investigation of the cadmium absorption of resonance neutrons in cadmium covered indium foils  

E-Print Network [OSTI]

, Fcd was measured for indium foils in an isotropic epi-thermal neutron flux. In order to obtain an isotropic epi-thermal neutron flux, a test section was constructed utilizing three 2-curie Pu-Be neutron sources each located at an apex... of resonance neutrons absorbed by the cadmium, thus giving a larger Fcd for the thicker foils. Martin (7), however, measured F d for 29, 69, 88, and 94 mg/cm2 indium foils in graphite and found no such variation. He lists a value of 1. 09 for each foil...

Powell, James Edward

2012-06-07T23:59:59.000Z

148

Monopole-optimized effective interaction for tin isotopes  

Science Journals Connector (OSTI)

We present a systematic configuration-interaction shell-model calculation on the structure of light tin isotopes with a global optimized effective interaction. The starting point of the calculation is the realistic CD-Bonn nucleon-nucleon potential. The unknown single-particle energies of the 1d3/2, 2s1/2, and 0h11/2 orbitals and the T=1 monopole interactions are determined by fitting to the binding energies of 157 low-lying yrast states in 102?132Sn. We apply the Hamiltonian to analyze the origin of the spin inversion between 101Sn and 103Sn that was observed recently and to explore the possible contribution from interaction terms beyond the normal pairing.

Chong Qi and Z. X. Xu

2012-10-18T23:59:59.000Z

149

Calculation of tin atomic data and plasma properties.  

SciTech Connect (OSTI)

This report reviews the major methods and techniques we use in generating basic atomic and plasma properties relevant to extreme ultraviolet (EUV) lithography applications. The basis of the work is the calculation of the atomic energy levels, transitions probabilities, and other atomic data by various methods, which differ in accuracy, completeness, and complication. Later on, we calculate the populations of atomic levels and ion states in plasmas by means of the collision-radiation equilibrium (CRE) model. The results of the CRE model are used as input to the thermodynamic functions, such as pressure and temperature from the internal energy and density (equation of state), electric resistance, thermal conduction, and other plasma properties. In addition, optical coefficients, such as emission and absorption coefficients, are generated to resolve a radiation transport equation (RTE). The capabilities of our approach are demonstrated by generating the required atomic and plasma properties for tin ions and plasma within the EUV region near 13.5 nm.

Morozov, V.; Tolkach, V.; Hassanein, A.

2005-08-26T23:59:59.000Z

150

Photoconductivity of germanium tin alloys grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Photocurrent spectroscopy was used to measure the infrared absorption of germanium-tin alloys grown by molecular beam epitaxy. To study dependence on Sn composition, the photocurrent was measured at 100 K on alloys of Ge{sub 1-x}Sn{sub x} with atomic percentages of Sn up to 9.8%. The optical absorption coefficient was calculated from the photocurrent, and it was found that the absorption edge and extracted bandgap energy decreased with increasing Sn content. For all Ge{sub 1-x}Sn{sub x} samples, a fundamental bandgap below that of bulk Ge was observed, and a bandgap energy as low as 0.624 eV was found for a Sn percentage of 9.8% at 100 K.

Coppinger, Matthew; Hart, John; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

2013-04-08T23:59:59.000Z

151

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS Cantilever Resonator  

E-Print Network [OSTI]

indium phosphide cantilever waveguide sensor platform. [2008-0134] Index Terms--Chemical sensors can- tilever waveguide resonator sensing platform utilizing a novel optical readout scheme the environment and detect var- ious chemicals is a critical task for industrial, military, and homeland defense

Rubloff, Gary W.

152

Strain compensation in boron-indium coimplanted laser thermal processed silicon  

E-Print Network [OSTI]

Strain compensation in boron-indium coimplanted laser thermal processed silicon Mark H. Clarka Strain in B-implanted laser thermal processed LTP silicon is reduced by coimplantation of In. Strain in the codoped layer is calculated using lattice constants measured by high-resolution x-ray diffraction

Florida, University of

153

Development of a 20x20cm2 'hot' indium-alloy hermetic seal  

E-Print Network [OSTI]

If long time in air before sealing ­ clean with Micro-90 and rinse with DI water 'Hot' Seal #12;8 Step 21 Development of a 20x20cm2 'hot' indium-alloy hermetic seal in an inert atmosphere for photo glass tile except for an aluminum photo-cathode top seal by compression on a viton o-ring active

154

Film Coating Process Research and Characterization of TiN Coated Racetrack-type Ceramic Pipe  

E-Print Network [OSTI]

TiN film was coated on the internal face of racetrack-type ceramic pipe by three different methods: radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of TiN film under different coating methods were compared. According to the AFM, SEM, XPS test results,these properties were analyzed, such as TiN film roughness and surface morphology. At the same time, the deposition rates were studied under two types' cathode, Ti wires and Ti plate. According to the SEM test results, Ti plate cathode can improve the TiN/Ti film deposition rate obviously.

Wang, Jie; Zhang, Bo; Wei, Wei; Fan, Le; Pei, Xiangtao; Hong, Yuanzhi; Wang, Yong

2015-01-01T23:59:59.000Z

155

Nano Res (2010) 3: 564573564 Uniform, Highly Conductive, and Patterned Transparent Films  

E-Print Network [OSTI]

and Center for Energy Nanoscience and Technology, University of Southern California, Los Angeles, California technique to fabricate silver nanowire films on both rigid and flexible substrates, bringing advantages displays, solar cells, and light emitting diodes [1­3].Doped-metal oxides such as tin-doped indium oxide

Zhou, Chongwu

156

Solar Cells and Photovoltaics  

Science Journals Connector (OSTI)

...The most common method for producing a-Si:H for photovoltaics is by plasma-enhanced CVD from SiH4 mixtures. The films are deposited onto a textured conducting oxide such as indium–tin oxide (ITO) which provide...

Stuart Irvine Prof.

2007-01-01T23:59:59.000Z

157

Three-dimensional defect characterization : focused ion beam tomography applied to tin sulfide thin films  

E-Print Network [OSTI]

Porosity is postulated to be one of the reasons for the low efficiency of tin sulfide-based devices. This work is a preliminary investigation of the effects of two film growth parameters deposition rate and substrate ...

Youssef, Amanda

2014-01-01T23:59:59.000Z

158

Nanocrystalline tin compounds/graphene nanocomposite electrodes as anode for lithium-ion battery  

Science Journals Connector (OSTI)

Nanocrystalline tin (Sn) compounds such as SnO2, SnS2, SnS, and graphene nanocomposites were prepared using hydrothermal method. The X-ray diffraction (XRD) pattern of the prepared nanocomposite reveals the prese...

Marappan Sathish; Satoshi Mitani; Takaaki Tomai…

2012-05-01T23:59:59.000Z

159

The tin impurity in Bi0.5Sb1.5Te3 alloys  

Broader source: Energy.gov [DOE]

Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped with Sn. Both single crystals and polycrystals prepared using powder metallurgical techniques are studied and properties reported.

160

Special government etalon of the brightness energy unit at the temperature of tin solidification  

Science Journals Connector (OSTI)

The special government etalon of the brightness energy unit at the tin solidification temperature, created in VNIIM, assures the reproduction of the unit and transmission of its dimension in conformity ... scheme...

V. V. Babushkin; I. V. Libova

1974-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Measurement of light capture in solar cells from silver- and tin-plated patterned bus bars  

E-Print Network [OSTI]

Bus bars on solar cells shade silicon from light. When the bus bars are patterned, they can reflect light back onto the silicon using total internal reflection. These patterned bus bars are tin plated and produce 1-2.5% ...

Winiarz, Christine Eve

2007-01-01T23:59:59.000Z

162

E-Print Network 3.0 - antimony-doped tin oxide Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Universitt Mainz Collection: Materials Science ; Chemistry 90 Micromachined Bradbury-Nielsen Gates Ignacio A. Zuleta, Griffin K. Barbula, Matthew D. Robbins, Oh Kyu Yoon, and...

163

Direct hybridization of tin oxide/graphene nanocomposites for highly efficient lithium-ion battery anodes  

Science Journals Connector (OSTI)

A facile direct hybridization route to prepare SnO2/graphene nanocomposites for Li-ion battery anode application is demonstrated. Uniform distribution of...2 nanoparticles on graphene layers was enabled by a one-...

Dong Ok Shin; Hun Park; Young-Gi Lee; Kwang Man Kim…

2014-06-01T23:59:59.000Z

164

A Spiking Neural Network for Gas Discrimination using a Tin Oxide Sensor Array  

E-Print Network [OSTI]

the molecular acivity into electrical signals. This information converges to a recurrent neural network that the different families of ORNs have broadly overlapping tuning profiles related to the molecular quality [6 Recherche en Informatique et Automatique) and by the French consulate, Procore Grant Ref: F-HK19/05T

Paris-Sud XI, Université de

165

Antimony-Doped Tin Oxide Aerogels as Porous Electron Collectors for Dye-Sensitized Solar Cells  

Science Journals Connector (OSTI)

Figure 3. Characterization of the aerogel films: (a) Thickness of films and (b) dye uptake measurement of D149 desorbed in DMF as a function of Sb doping in ATO aerogels and TiO2 coatings by ALD. ... Figure 4. SEM top views of a 15%Sb ATO aerogel without TiO2 coating at different magnifications (a,b) and of the aerogel with (c) 150 and (d,e) 300 cycles of TiO2; cross-section (f) of the sample shown in panel c. ... However, it was found that at 700 ALD cycles a clear peak for anatase TiO2 emerges, a phenomenon not observed for SnO2 samples coated by a similar ALD process (but using TiCl4 as a precursor) even at very thick TiO2 coatings. ...

Juan Pablo Correa Baena; Alexander G. Agrios

2014-04-21T23:59:59.000Z

166

The surface and materials science of tin oxide Matthias Batzill *, Ulrike Diebold  

E-Print Network [OSTI]

com- position from stoichiometric surfaces with Sn4+ surface cations into a reduced surface with Sn2 adsorption and reaction studies on SnO2 sur- faces have been hampered by the challenges of preparing well

Diebold, Ulrike

167

Electrochimica Acta 51 (2005) 943951 Tin oxide nanosensor fabrication using AC dielectrophoretic  

E-Print Network [OSTI]

into the microchannel. An alternating (AC) voltage of 9.8 V peak to peak, with variable frequency, was applied between, Room 321 Love Building, 771, Ferst Drive, Atlanta, GA 30332, USA b School of Materials Science a Maxwell­ Wagner interfacial polarization at a frequency determined by the relationship between the complex

Wang, Zhong L.

168

Laser Ablation Synthesis and Electron Transport Studies of Tin Oxide Nanowires**  

E-Print Network [OSTI]

and solar cells.[7±9] In addition, SnO2 thin films have been extensively studied and used as chemical demonstrated to work as sensitive UV and polarized UV detectors. A quartz tube furnace was used for our SnO2 of the furnace, and Si±SiO2 sub- strates covered with 20 nm gold catalytic clusters were placed in the middle

Zhou, Chongwu

169

Tin City Long Range Radar Station Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Tin City Long Range Radar Station Wind Farm Tin City Long Range Radar Station Wind Farm Jump to: navigation, search Name Tin City Long Range Radar Station Wind Farm Facility Tin City Long Range Radar Station Sector Wind energy Facility Type Community Wind Facility Status In Service Owner Tin City Long Range Radar Station Developer Tanadgusix Corp. Energy Purchaser Tin City Long Range Radar Station Location Nome AK Coordinates 65.559372°, -167.949686° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":65.559372,"lon":-167.949686,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

170

Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 2)/c(8 2) surface by molecular oxygen  

E-Print Network [OSTI]

by molecular oxygen Jonathon B. Clemens a , Sarah R. Bishop a , Darby L. Feldwinn a,1 , Ravi Droopad b,2 simulations Scanning tunneling microscopy Chemisorption Oxidation Indium arsenide Oxygen Semi conducting) surface by molecular oxygen (O2) were studied using scanning tunneling microscopy (STM) and density

Kummel, Andrew C.

171

Site preferences of indium impurity atoms in intermetallics having Al3Ti and Al3Zr crystal structures  

E-Print Network [OSTI]

Site preferences of indium impurity atoms in intermetallics having Al3Ti and Al3Zr crystal-04843 (Metals Program) and Praveen Sinha Fund for Physics Research. L12 DO22 DO23 Cu3Au Al3Ti Al3Zr #12;Outline · Indium was doped in samples of Al3V and Al3Ti (Al3Ti structure) and Al3Zr (Al3Zr structure) by arc

Collins, Gary S.

172

Indium diffusion through high-k dielectrics in high-k/InP stacks  

SciTech Connect (OSTI)

Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Galatage, R. V. [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-08-05T23:59:59.000Z

173

SIGNUM: A Matlab, TIN-based landscape evolution model  

Science Journals Connector (OSTI)

Several numerical landscape evolution models (LEMs) have been developed to date, and many are available as open source codes. Most are written in efficient programming languages such as Fortran or C, but often require additional code efforts to plug in to more user-friendly data analysis and/or visualization tools to ease interpretation and scientific insight. In this paper, we present an effort to port a common core of accepted physical principles governing landscape evolution directly into a high-level language and data analysis environment such as Matlab. SIGNUM (acronym for Simple Integrated Geomorphological Numerical Model) is an independent and self-contained Matlab, TIN-based landscape evolution model, built to simulate topography development at various space and time scales. SIGNUM is presently capable of simulating hillslope processes such as linear and nonlinear diffusion, fluvial incision into bedrock, spatially varying surface uplift which can be used to simulate changes in base level, thrust and faulting, as well as effects of climate changes. Although based on accepted and well-known processes and algorithms in its present version, it is built with a modular structure, which allows to easily modify and upgrade the simulated physical processes to suite virtually any user needs. The code is conceived as an open-source project, and is thus an ideal tool for both research and didactic purposes, thanks to the high-level nature of the Matlab environment and its popularity among the scientific community. In this paper the simulation code is presented together with some simple examples of surface evolution, and guidelines for development of new modules and algorithms are proposed.

A. Refice; E. Giachetta; D. Capolongo

2012-01-01T23:59:59.000Z

174

Release Path Temperatures of Shock-Compressed Tin from Dynamic Reflectance and Radiance Measurements  

SciTech Connect (OSTI)

Dynamic reflectance and radiance measurements were conducted for tin samples shock compressed to 35 GPa and released to 15 GPa using high explosives. We determined the reflectance of the tin samples glued to lithium fluoride windows using an integrating sphere with an internal xenon flashlamp as an illumination source. The dynamic reflectance (R) was determined at near normal incidence in four spectral bands with coverage in visible and near-infrared spectra. Uncertainties in R/R0 are < 2%, and uncertainties in absolute reflectance are < 5%. In complementary experiments, thermal radiance from the tin/glue/lithium fluoride interface was recorded with similar shock stress and spectral coverage as the reflectance measurements. The two sets of experiments were combined to obtain the temperature history of the tin surface with an uncertainty of < 2%. The stress at the interface was determined from photonic Doppler velocimetry and combined with the temperatures to obtain temperature-stress release paths for tin. We discuss the relationship between the experimental release paths and release isentropes that begin on the principal shock Hugoniot.

La Lone, B. M. [NSTec; Stevens, G. D. [NSTec; Turley, W. D. [NSTec; Holtkamp, D. B. [LANL; Iverson, A. J. [NSTec; Hixson, R. S. [NSTec; Veeser, L. R. [NSTec

2013-08-01T23:59:59.000Z

175

State of the Art Power-in Tube Niobium-Tin Superconductors  

SciTech Connect (OSTI)

Powder-in-Tube (PIT) processed Niobium-Tin wires are commercially manufactured for nearly three decades and have demonstrated a combination of very high current density (presently up to 2500 A mm{sup -2} non-Cu at 12 T and 4.2 K) with fine (35 {micro}m), well separated filaments. We review the developments that have led to the present state of the art PIT Niobium-Tin wires, discuss the wire manufacturing and A15 formation processes, and describe typical superconducting performance in relation to magnetic field and strain. We further highlight successful applications of PIT wires and conclude with an outlook on possibilities for further improvements in the performance of PIT Niobium-Tin wires.

Godeke, A.; Ouden, A. Den; Nijhuis, A.; ten Kate, H.H.J.

2008-06-01T23:59:59.000Z

176

(Data in metric tons, unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2003. Two companies,  

E-Print Network [OSTI]

with the curtailment of primary refining capacity have added an extra incentive to the recovery of secondary indium be compared with Japan where the decline in domestic zinc refining has stimulated an aggressive recycling in the world economy. The report of reduced production from mines that produce byproduct indium had a negative

177

Revised September 2013 JAMES R. SITES  

E-Print Network [OSTI]

Executive Committee (1982-84, 1988-1989) Council for Photovoltaic Research (1999-present), Executive. The Colorado State photovoltaics program began with the development of indium­ tin­oxide solar cells, and it has emphasized the device physics of low­cost polycrystalline thin-film solar cells. Its goals

Sites, James R.

178

Light-emitting devices based on ruthenium,,II...,,4,7-diphenyl-1, 10-phenanthroline...3 : Device response rate and efficiency  

E-Print Network [OSTI]

of a structure of transparent anode indium­ tin­oxide ITO glass/organic active layer s /metal. For high device materials have been developed extensively, ruthe- nium Ru -based charge transfer complexes are recently reII (L" )(L)2 at the cathode elec- trode. The generated species hop through the film and when

Shapira, Yoram

179

Published: April 21, 2011 r 2011 American Chemical Society 8956 dx.doi.org/10.1021/ja201129n |J. Am. Chem. Soc. 2011, 133, 89568960  

E-Print Network [OSTI]

" electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is known of such films. The impact of this study on the future development of optoelectronic devices is discussed. I. Introduction Tin-doped indium oxide (ITO) is routinely used as an electrode in various optoelectronic devices

Ismagilov, Rustem F.

180

Ris-R-1140(EN) Deposition of ITO and AZO thin  

E-Print Network [OSTI]

seen through vacuum window during film deposition. The plasma is the elongated bright area in the blue atmospheres 51 5.1 Indium tin oxide 51 5.1.1 Crystal structure 51 5.1.2 Band structure 52 5.1.3 Conductivity

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Annealing behavior of the hydrogen-vacancy complex in bulk indium phosphide crystals  

SciTech Connect (OSTI)

In order to explain the effects of hydrogen on the electrical properties of bulk indium phosphide crystals, they have performed a series of high temperature annealing studies with both undoped and iron-doped indium phosphide crystals. The samples were annealed at 900 C for 6, 36, and 72 hours, respectively, under a phosphorus overpressure of five atmospheres. Samples were characterized at 10 K by Fourier transform infrared absorption spectroscopy which allowed us to measure the concentrations of both the Fe{sup 2+} and V{sub In}-H{sub 4} defects simultaneously. Undoped samples were further characterized by the Hall effect measurements. The authors find in the iron-doped samples that the [Fe{sup 2+}]/[Fe{sup 3+}] ratio decreases gradually with increasing annealing time, indicating a reduction in the number of donors in the samples. In the undoped samples, annealing leads to a reduction of the free electron concentration accompanied by an increase in the 77 K mobility. The increase of the sample`s mobility eliminates the possibility that the reduction of the free electron concentration is due to an increase in the concentration of the compensating acceptors. The explanation for the observed behavior in all samples is that hydrogen acts as a donor and it diffuses out of the crystal during the annealing process. Based on the experimental data, they propose a calibration equation of [V{sub In}-H{sub 4}] = 4.2 {times} 10{sup 16} cm{sup {minus}1} {times} Absorbance (cm{sup {minus}1}) which is used to correlate the hydrogen-vacancy complex concentrations with the changes of the V{sub In}-H{sub 4} absorption peak in both the iron-doped and the undoped samples. Their results confirm the donor nature of the hydrogen-vacancy complex and provide strong evidence regarding the reduction mechanism of free carrier concentrations in bulk indium phosphide crystals during high temperature annealing under a phosphorus atmosphere.

Ye, Q.; Wolk, J.A.; Bourret-Courchesne, E.D. [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.; Bliss, D.F. [Air Force Rome Lab., Hanscom AFB, MA (United States)

1998-12-31T23:59:59.000Z

182

Process for light-driven hydrocarbon oxidation at ambient temperatures  

DOE Patents [OSTI]

A photochemical reaction for the oxidation of hydrocarbons uses molecular oxygen as the oxidant. A reductive photoredox cycle that uses a tin(IV)- or antimony(V)-porphyrin photosensitizer generates the reducing equivalents required to activate oxygen. This artificial photosynthesis system drives a catalytic cycle, which mimics the cytochrome P.sub.450 reaction, to oxidize hydrocarbons. An iron(III)- or manganese(III)-porphyrin is used as the hydrocarbon-oxidation catalyst. Methylviologen can be used as a redox relay molecule to provide for electron-transfer from the reduced photosensitizer to the Fe or Mn porphyrin. The system is long-lived and may be used in photo-initiated spectroscopic studies of the reaction to determine reaction rates and intermediates.

Shelnutt, John A. (Tijeras, NM)

1990-01-01T23:59:59.000Z

183

Metal Oxides  

Science Journals Connector (OSTI)

Metal oxides are the class of materials having the widest application in gas sensors. This chapter presents information related to the application of various metal oxides in gas sensors designed on different p...

Ghenadii Korotcenkov

2013-01-01T23:59:59.000Z

184

INTERIM RESULTS FROM A STUDY OF THE IMPACTS OF TIN(II) BASED MERCURY TREATMENT IN A SMALL STREAM ECOSYSTEM: TIMS BRANCH, SAVANNAH RIVER SITE  

SciTech Connect (OSTI)

Mercury (Hg) has been identified as a 'persistent, bioaccumulative and toxic' pollutant with widespread impacts throughout North America and the world (EPA. 1997a, 1997b, 1998a, 1998b, 2000). Although most of the mercury in the environment is inorganic Hg, a small proportion of total Hg is transformed through the actions of aquatic microbes into methylmercury (MeHg). In contrast to virtually all other metals, MeHg biomagnifies or becomes increasingly concentrated as it is transferred through aquatic food chains so that the consumption of mercury contaminated fish is the primary route of this toxin to humans. For this reason, the ambient water quality criterion (AWQC) for mercury is based on a fish tissue endpoint rather than an aqueous Hg concentration, as the tissue concentration (e.g., < 0.3 {mu}g/g fillet) is considered to be a more consistent indicator of exposure and risk (EPA, 2001). Effective mercury remediation at point-source contaminated sites requires an understanding of the nature and magnitude of mercury inputs, and also knowledge of how these inputs must be controlled in order to achieve the desired reduction of mercury contamination in biota necessary for compliance with AWQC targets. One of the challenges to remediation is that mercury body burdens in fish are more closely linked to aqueous MeHg than to inorganic Hg concentrations (Sveinsdottir and Mason 2005), but MeHg production is not easily predicted or controlled. At point-source contaminated sites, mercury methylation is not only affected by the absolute mercury load, but also by the form of mercury loaded. In addition, once MeHg is formed, the hydrology, trophic structure, and water chemistry of a given system affect how it is transformed and transferred through the food chain to fish. Decreasing inorganic Hg concentrations and loading may often therefore be a more achievable remediation goal, but has led to mixed results in terms of responses in fish bioaccumulation. A number of source control measures have resulted in rapid responses in lake or reservoir fisheries (Joslin 1994, Turner and Southworth 1999; Orihel et al., 2007), but examples of similar responses in Hg-contaminated stream ecosystems are less common. Recent work suggests that stream systems may actually be more susceptible to mercury bioaccumulation than lakes, highlighting the need to better understand the ecological drivers of mercury bioaccumulation in stream-dwelling fish (Chasar et al. 2009, Ward et al. 2010). In the present study we examine the response of fish to remedial actions in Tims Branch, a point-source contaminated stream on the Department of Energy's (DOE) Savannah River Site in Aiken, South Carolina. This second order stream received inorganic mercury inputs at its headwaters from the 1950s-2000s which contaminated the water, sediments, and biota downstream. In 2007, an innovative mercury removal system using tin (II) chloride (stannous chloride, SnCl{sub 2}) was implemented at a pre-existing air stripper. Tin(II) reduces dissolved Hg (II) to Hg (0), which is removed by the air stripper. During this process, tin(II) is oxidized to tin (IV) which is expected to precipitate as colloidal tin(IV) oxides and hydroxides, particulate materials with relatively low toxicity (Hallas and Cooney, 1981, EPA 2002, ATSDR, 2005). The objectives of the present research are to provide an initial assessment of the net impacts of the tin(II) based mercury treatment on key biota and to document the distribution and fate of inorganic tin in this small stream ecosystem after the first several years of operating a full scale system. To support these objectives, we collected fish, sediment, water, invertebrates, and biofilm samples from Tims Branch to quantify the general behavior and accumulation patterns for mercury and tin in the ecosystem and to determine if the treatment process has resulted in: (1) a measurable beneficial impact on (i.e., decrease of) mercury concentration in upper trophic level fish and other biota; this is a key environmental endpoint since reducing mercury concen

Looney, B.; Bryan, L.; Mathews, T.

2012-03-30T23:59:59.000Z

185

Ambient gas effects on the dynamics of laser-produced tin plume expansion  

E-Print Network [OSTI]

Ambient gas effects on the dynamics of laser-produced tin plume expansion S. S. Harilal,a Beau O in the development of an extreme ultraviolet lithographic light source. An ambient gas that is transparent to 13.5 nm and deceleration of plume species, the addition of ambient gas leads to other events such as double peak formation

Tillack, Mark

186

Collapse of superconductivity in a hybrid tin-graphene Josephson junction array  

E-Print Network [OSTI]

1 Collapse of superconductivity in a hybrid tin-graphene Josephson junction array Zheng Han1 of the Josephson junction array into a zero-temperature metallic state. The suppression of proximity, models involving specific types of Josephson junction arrays in which superconducting disks are coupled

Boyer, Edmond

187

Biodistribution of 111Indium-labeled Engineered Human Antibody CTMO1 in Ovarian Cancer Patients: Influence of Protein Dose  

Science Journals Connector (OSTI)

...caused partly by the type of chelator. The indium-chelating macro cycle 9N3 (18) was chosen because the distribution of ~@ ~Inis then likely to represent the distribution of the antibody hCTMO1. In the studies performed by Hagan et a!. (32) and Beatty...

Arjan C. van Hof; Carla F. M. Molthoff; Quentin Davies; Alan C. Perkins; René H. M. Verheijen; Peter Kenemans; Wim den Hollander; Abraham J. Wilhelm; Terry S. Baker; Mark Sopwith; Malcolm Frier; E. Malcolm Symonds; Jan C. Roos

1996-11-15T23:59:59.000Z

188

DFT studies of Indium Nanoclusters (Inn where n=3-10) and Nanotube and their interaction with molecular hydrogen  

E-Print Network [OSTI]

Density functional theory calculations have been performed on Indium nanoclusters (Inn, n= 3 to 10) to explore the relative stability among their different isomers and interaction with H2. Geometry optimizations starting from initial candidate geometries were performed for each cluster size, so as to determine a few low energy isomers for each size. Clusters with planar configuration and high symmetry are found to be more stable. For n=8 there comes transition from 2D to 3D structures, which formed by stacking of planar rings are most stable. Energetically favorable isomers of indium nanoclusters for each size were considered to get H2 adsorbed. In general H2 interaction with these clusters is week but with odd index i.e. 5, 7 and 9 is significant. Indium nanotube also indicates H2 adsorption but Eads increases many folds on introduction of defect in the tube. On basis of these DFT studies we propose indium nanotubes and clusters of particular size appear to be good candidate for hydrogen storage materials.

Baig, Mirza Wasif; Ahmad, Idrees; Siddiq, Muhammad

2014-01-01T23:59:59.000Z

189

Method of making a catalytic metal oxide selective for the conversion of a gas and a coating system for the selective oxidation of hydrocarbons and carbon monoxide  

SciTech Connect (OSTI)

A method is described of making a catalytic metal oxide selective to catalyzing the conversion of given gas species, comprising: intimately supporting a solid film of catalytic metal oxide on an electrically conducting material, said film having an exposed outer surface spaced no greater than 1,000 angstroms from said conducting material and said conducting material being matched to the composition of said oxide to change the electron state of the exposed outer surface to promote a reaction between given gas species and said oxide, said metal oxide being selected from the group consisting of TiO[sub 2], SnO[sub 2], FeO, SrTiO[sub 3], and CoO, and said conducting material being selected from the group consisting of Au, Pt, TiN, Pd, Rh, Ni, and Co.

Logothetis, E.M.; Soltis, R.E.

1993-07-20T23:59:59.000Z

190

An Original Route to Immobilize an Organic Biocide onto a Transparent Tin Dioxide Electrode  

Science Journals Connector (OSTI)

An Original Route to Immobilize an Organic Biocide onto a Transparent Tin Dioxide Electrode ... Chloramine is increasingly being considered as an alternative final disinfectant to chlorine in drinking water treatment even if it is generally not as potent as free chlorine against planktonic organisms. ... Moreover, the detection of chlorine by XPS (surface sensitive) and by EDX (bulk sensitive) indicates that the organic deposit is chlorinated throughout its thickness. ...

Catherine Debiemme-Chouvy; Sanae Haskouri; Guy Folcher; Hubert Cachet

2007-02-21T23:59:59.000Z

191

Catalytic and physicochemical properties of aluminoplatinum catalysts modified with indium and gallium  

SciTech Connect (OSTI)

Aluminoplatinum catalysts (APC) are widely used in transformations of hydrocarbons, particularly in reforming of gasoline fractions and dehydrogenation of higher normal paraffins. Promotion of APC with indium and gallium increases their activity and stability in the dehydrogenation of paraffins. Introduction of group III elements in APC inhibits coke formation during dehydrogenation and prevents blocking of the surface of the Pt. The change in the catalytic properties of APC modified with In is due to the partial transfer of the electron density from Pt to In. Both APC with In and Ga additives and monometallic catalysts were studied in the present article by the methods of IR spectroscopy and adsorption. In addition to traditional transmission IR spectroscopy, IR spectroscopy in diffusely scattered light was used, which permits conducting both spectral and adsorption measurements on the same samples.

Zaitsev, A.V.; Tyupaev, A.P.; Borovkov, V.Yu.; Timofeeva, E.A.; Isatulyants, G.V.; Kazanskii, B.B.

1986-10-10T23:59:59.000Z

192

Study of indium and solder bumps for the BTeV Pixel Detector  

SciTech Connect (OSTI)

The pixel detector proposed for the BTeV experiment at the Fermilab Tevatron will use bump-bonding technology based on either Indium or Pb/Sn solder to connect the front-end readout chips to the silicon pixel sensors. We have studied the strength of the bumps by visual inspection of the bumps bonding silicon sensor modules to dummy chips made out of glass. The studies were done before and after thermal cycles, exposed to intense irradiation, and with the assemblies glued to a graphite substrate. We have also carried out studies on effects of temperature changes on both types of bump bonds by observing the responses of single-chip pixel detectors to an Sr{sup 90} source. We report the results from these studies and our plan to measure the effect of cryogenic temperatures on the bumps.

Simon W Kwan et al.

2003-11-05T23:59:59.000Z

193

(Data in metric tons, unless otherwise noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1997. Domestically  

E-Print Network [OSTI]

--United States: 1993 1994 1995 1996 1997e Production, refinery -- -- -- -- -- Imports for consumption 73.4 70 for the indium market remains promising. World Refinery Production, Reserves, and Reserve Base: Refinery

194

Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc  

SciTech Connect (OSTI)

The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu Jiangtao; Wakeham, William A. [Chemical Engineering Department, Aristotle University, 54124 Thessaloniki (Greece); Institut fuer Materialphysik im Weltraum, Deutsches Zentrum fuer Luft- und Raumfahrt, 51170 Koeln (Germany); Kutateladze Institute of Thermophysics, Siberian Brunch of the Russian Academy of Sciences, Lavrentyev ave. 1, 630090 Novosibirsk (Russian Federation); Center of Thermal and Fluid Science, School of Energy and Power Engineering, Xi'an Jiaotong University, Shaanxi 710049 (China); Chemical Engineering Department, Imperial College, London SW7 2BY (United Kingdom)

2012-09-15T23:59:59.000Z

195

Local indium segregation and band structure in high efficiencygreen light emitting InGaN/GaN diodes  

SciTech Connect (OSTI)

GaN/InGaN light emitting diodes (LEDs) are commercialized for lighting applications because of the cost efficient way that they produce light of high brightness. Nevertheless, there is significant room for improving their external emission efficiency from typical values below 10 percent to more than 50 percent, which are obtainable by use of other materials systems that, however, do not cover the visible spectrum. In particular, green-light emitting diodes fall short in this respect, which is troublesome since the human eye is most sensitive in this spectral range. In this letter advanced electron microscopy is used to characterize indium segregation in InGaN quantum wells of high-brightness, green LEDs (with external quantum efficiency as high as 15 percent at 75 A/cm2). Our investigations reveal the presence of 1-3 nm wide indium rich clusters in these devices with indium concentrations as large as 0.30-0.40 that narrow the band gap locally to energies as small as 2.65 eV.

Jinschek, Joerg R.; Erni, Rolf; Gardner, Nathan F.; Kim, AndrewY.; Kisielowski, Christian

2004-11-23T23:59:59.000Z

196

LABORATORY REPORT ON THE REDUCTION AND STABILIZATION (IMMOBILIZATION) OF PERTECHNETATE TO TECHNETIUM DIOXIDE USING TIN(II)APATITE  

SciTech Connect (OSTI)

This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-105 simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mo bile +7 state under acidic or oxygenated conditions within the tested period oftime (6 weeks). Previous work (RPP-RPT-39195, Assessment of Technetium Leachability in Cement-Stabilized Basin 43 Groundwater Brine) indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table A shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit. The loaded sample (200 mg of Sn(II)apatite loaded with O.311 mg of Tc-99) was subjected to different molarities of nitric acid to determine if the Sn(II)apatite would release the sequestered technetium. The acid was allowed to contact for 1 minute with gentle shaking ('1st wash'); the aqueous solution was then filtered, and the filtrate was analyzed for Tc-99. Table B shows the results ofthe nitric acid exposure. Another portion of acid was added, shaken for a minute, and filtered ('2nd wash'). The technetium-loaded Sn(II)apatite was also subjected to water leach tests. The loaded sample (0.2 g of Sn(II)apatite was loaded with 0.342 mg of Tc-99) was placed in a 200-mL distilled water column and sparged with air. Samples were taken weekly over a 6-week period, and the dissolved oxygen ranged from 8.4 to 8.7 mg/L (average 8.5 mg/L); all samples recorded less than the detection limit of 0.01 mg/L Tc-99. The mechanism by which TcO{sub 2} is sequestered and hence protected from re-oxidation appears to be an exchange with phosphate in the apatite lattice, as the phosphorus that appeared in solution after reaction with technetium was essentially the same moles of technetium that were taken up by the Sn(II)apatite (Table 6). Overall, the reduction of the mobile pertechnetate (+7) to the less mobile technetium dioxide (+4) by Sn(II)apatite and subsequent sequestration of the technetium in the material indicates that Sn(II)apatite is an excellent candidate for long-term immobilization of technetium. The indications are that the Sn(II)apatite will lend itself to sequestering and inhibiting the reoxidation to the mobile pertechnetate species, thus keeping the radionuclide out of the environment.

DUNCAN JB; HAGERTY K; MOORE WP; RHODES RN; JOHNSON JM; MOORE RC

2012-06-01T23:59:59.000Z

197

Influence of surface defects and local structure on acid/base properties and oxidation pathways over metal oxide surfaces. Final report, June 1990--January 1997  

SciTech Connect (OSTI)

This final report covers work done during project period one and project period two. All the work in project period one was focused on the selective oxidation of oxygenated hydrocarbons over the SnO{sub 2}(110) single crystal surface. In project period two, the emphasis was on the acid/base properties of SnO{sub 2}(110) as well as two different Cu{sub 2}O single crystal surfaces. Prior to the summary of results, a description of these different surfaces is given as background information. Results are described for the dissociation and reaction of Bronsted acids (methanol, formic acid, water, formaldehyde, acetone, propene, acetic acid, and carbon monoxide). Results from project period two include: ammonia adsorption, CO{sub 2} adsorption, propene adsorption and oxidation, with tin oxides; complimentary work with copper oxides; and STM investigations.

Cox, D.F.

1997-12-31T23:59:59.000Z

198

Syntheses and structural characterization of zirconium-tin and zirconium-lead binary and ternary systems  

SciTech Connect (OSTI)

The binary zirconium-tin system was reinvestigated. The A15 phase appears to be a line phase with a Zr{sub 4}Sn composition. The Zr{sub 5}Sn{sub 3} (Mn{sub 5}Si{sub 3}-type) and Zr{sub 5}Sn{sub 4} (Ti{sub 5}Ga{sub 4}-type) compounds are line phases below 1000{degree}C, the latter being a self-interstitial phase of the former. ZrSn{sub 2} is the tin-richest phase. There is an one-phase region between these phases with partial self-interstitials at high temperatures. The zirconium-lead system behaves similarly: there are an A15 phase with a Zr{sub {approximately}5.8}Pb composition, Zr{sub 5}Pb{sub 3} (Mn{sub 5}Si{sub 3}-type) and Zr{sub 5}Pb{sub 4} (Ti{sub 5}Ga{sub 4-type}) compounds, and a high temperature solid solution between Zr{sub 5}Pb{sub >3.5} and Zr{sub 5}Pb{sub 4} from below 1000{degree}C; however, the ZrSn{sub 2} analogue is not formed. The Mn{sub 5}Si{sub 3}-type phases in these systems can accommodate third elements interstitially to form stoichiometric compounds Zr{sub 5}Sn{sub 3}Z (Z = B, C, N, O, Al, Si, P, S, Cu, Zn, Ga, Ge, and As and Se) and Zr{sub 5}Pb{sub 3}Z (Z = Al, Si, P, S, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Ag, Cd, In, Sn, Sb and Te) as well as their self-interstitial derivatives. The systems Zr-Sn-T, T = Fe, Co and Ni, did not produce stoichiometric interstitial phases Zr{sub 5}Sn{sub 3}T. Instead, the interstitial phases for these elements are formed only with excess tin that partially occupies the interstitial site together with a T element. Reducing the amount of tin in these systems yields two new phases; Zr{sub 5}Sn{sub 2+x}Fe{sub 1-x} (0 {le} {times} {le} 0.28) (W{sub 5}Si{sub 3}-type) and Zr{sub 6}Sn{sub 2}Fe (Zr{sub 6}Al{sub 2}Co-type) as characterized by X-ray single crystal analyses. A cobalt analogue for the latter was also synthesized.

Kwon, Y.U.

1991-01-28T23:59:59.000Z

199

Methods of Improving Internal-TIN Nb{sub 3}Sn for Fusion Applications  

SciTech Connect (OSTI)

Development of a more reliable and economical high field material for ITER and TPX as well as LDK and KSTAR programs. The overall objective of this work is to provide the TPX/ITER programs and similar projects with an improved, reliable and economical high field Nb{sub 3}Sn multifilamentary conductor strand made by the internal-tin process. An effort will also be made to determine the reasons for the property changes taking place after various heat treatment cycles in an effort to develop optimized heat treatments for the various applications.

Pyon, T; Gregory, E.

2002-08-29T23:59:59.000Z

200

Neutron scattering from elemental indium, the optical model, and the bound-state potential  

SciTech Connect (OSTI)

Neutron differential elastic-scattering cross sections of elemental indium are measured from 4.5 to 10 MeV at incident-energy intervals of {approx}500 keV. Seventy or more differential values are obtained at each incident energy, distributed between {approx}18{degree} and 160{degree}. These experimental results are combined with lower-energy values previously obtained at this laboratory, and with 11 and 14 MeV results in the literature, to form a comprehensive elastic-scattering database extending from {approx}1.5 to 14 MeV. These data are interpreted in terms of a conventional spherical optical model. The resulting potential is extrapolated to the bound-state regime. It is shown that in the middle of the 50--82 neutron shell, the potential derived from the scattering results adequately describes the binding energies of article states, but does not do well for hole states. The latter shortcoming is attributed to the holes states having occupational probabilities sufficiently different from unity, so that the exclusion principle become a factor, and to the rearrangement of the neutron core. 68 refs.

Chiba, S. (Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan)); Guenther, P.T.; Lawson, R.D.; Smith, A.B. (Argonne National Lab., IL (USA))

1990-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Micrometer-Sized Fluorine Doped Tin Oxide As Fast Electron Collector for Enhanced Dye-Sensitized Solar Cells  

Science Journals Connector (OSTI)

And when the cycle is 2, the photovolatic characteristics of the device are much better with short-circuit current density Jsc, open circuit voltage Voc, and FF of 13.8 mA/cm2, 0.67 V, and 52%, respectively. ...

Xiao Rui Cui; Ye Feng Wang; Zhao Li; Lu Zhou; Fei Gao; Jing Hui Zeng

2014-09-16T23:59:59.000Z

202

Tin Oxide Based Composites Derived Using Electrostatic Spray Deposition Technique as Anodes for Li-Ion Batteries.  

E-Print Network [OSTI]

?? Recent advances in the electric & hybrid electric vehicles and rapid developments in the electronic devices have increased the demand for high power and… (more)

Dhanabalan, Abirami

2012-01-01T23:59:59.000Z

203

Efficient and selective conversion of fructose to 5-hydroxymethylfurfural over metal exchanged heteropoly tungstate supported on tin oxide catalysts  

Science Journals Connector (OSTI)

A series of Al exchanged heteropoly tungstate (AlTPA) supported on SnO2...catalysts were prepared and characterized by FT-Infrared, X-ray diffraction and temperature programmed desorption of ammonia. The catalyst...

G. Raveendra; M. Srinivas; P. S. Sai Prasad…

2013-12-01T23:59:59.000Z

204

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering M. A. Auger,1,5 L. Vzquez,1,  

E-Print Network [OSTI]

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering M. A. Auger,1 manuscript received 1 December 2005; published 31 January 2006 We study surface kinetic roughening of Ti. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening

Cuerno, Rodolfo

205

Proton elastic scattering from tin isotopes at 295 MeV and systematic change of neutron density distributions  

E-Print Network [OSTI]

Cross sections and analyzing powers for proton elastic scattering from $^{116,118,120,122,124}$Sn at 295 MeV have been measured for a momentum transfer of up to about 3.5 fm$^{-1}$ to deduce systematic changes of the neutron density distribution. We tuned the relativistic Love-Franey interaction to explain the proton elastic scattering of a nucleus whose density distribution is well known. Then, we applied this interaction to deduce the neutron density distributions of tin isotopes. The result of our analysis shows the clear systematic behavior of a gradual increase in the neutron skin thickness of tin isotopes with mass number.

S. Terashima; H. Sakaguchi; H. Takeda; T. Ishikawa; M. Itoh; T. Kawabata; T. Murakami; M. Uchida; Y. Yasuda; M. Yosoi; J. Zenihiro; H. P. Yoshida; T. Noro; T. Ishida; S. Asaji; T. Yonemura

2008-01-20T23:59:59.000Z

206

Unusual crystallographic structure and its fluctuation of indium nanoparticles as-deposited and observed with HRTEM using the UHV-DC-TEM system  

Science Journals Connector (OSTI)

A UHV-DC-TEM system was developed for direct transportation of samples between an ultra-high vacuum deposition chamber (UHV-DC) and a UHV transmission electron microscope (UHV-TEM). Indium nanoparticles have been deposited onto Si(110) TEM samples at room temperature in UHV-DC and observed in UHV-TEM with high resolution transmission electron microscopy (HRTEM). Freshly made indium nanoparticles were found to be single, twinned, pseudo-twinned crystals and decahedral multiply-twinned particles (MTPs) with their size in the range 8–15 nm. The structure of single crystalline indium nanoparticles is body-centered tetragonal (bct), which is the same as that of bulk indium. In addition to the usual {011} type twins for bct structure, a pseudo-twin was observed to have an orientation relationship as [111]A//[100]B and (101?)A//(01?1?)B. The structure of MTP indium is complicated because of the co-existence of bct and fcc structures within one nanocrystal. The structure fluctuation process has been examined using a video recorder with time scale down to 1/60 s. No complete liquid state was seen during this fluctuation.

Q. Chen; M. Tanaka; K. Furuya

1999-01-01T23:59:59.000Z

207

Oxidation of Propane by Doped Nickel Oxides  

Science Journals Connector (OSTI)

... present study, however, indicate that in the absence of excess oxygen, direct oxidation of propane by the oxide lattice can occur.

D. W. McKEE

1964-04-11T23:59:59.000Z

208

Diffusion of In{sub 0.53}Ga{sub 0.47}As elements through hafnium oxide during post deposition annealing  

SciTech Connect (OSTI)

Diffusion of indium through HfO{sub 2} after post deposition annealing in N{sub 2} or forming gas environments is observed in HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO{sub 2} and is desorbed upon annealing at 350?°C. Reduction of the interfacial layer thickness and potential densification of HfO{sub 2}, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance.

Cabrera, W.; Brennan, B.; Dong, H.; Wallace, R. M.; Chabal, Y. J., E-mail: chabal@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); O'Regan, T. P.; Povey, I. M.; Monaghan, S.; O'Connor, É.; Hurley, P. K. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)] [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)

2014-01-06T23:59:59.000Z

209

The UniversiTy of Texas aT aUsTin Application for Tuition Rebate  

E-Print Network [OSTI]

The UniversiTy of Texas aT aUsTin Application for Tuition Rebate Name) _________ / _________ General Information An undergraduate may be eligible for a tuition rebate of up to $1,000 at graduation documentation, you may submit an application for a rebate. If you answered yes to question 3a., you

Lightsey, Glenn

210

Absolute orientation-dependent anisotropic TiN(111) island step energies and stiffnesses from shape fluctuation analyses  

Science Journals Connector (OSTI)

In situ high-temperature (1165–1248 K) scanning-tunneling microscopy was used to measure temporal fluctuations about the anisotropic equilibrium shape of two-dimensional TiN(111) adatom and vacancy islands on atomically smooth TiN(111) terraces. The equilibrium island shape was found to be a truncated hexagon bounded by alternating ?110? steps, which form [100] and [110] nanofacets with the terrace. Relative step energies ? as a function of step orientation ? were obtained from the inverse Legendre transformation of the equilibrium island shape to within an orientation-independent scale factor ?, the equilibrium chemical potential of the island per unit TiN area. We find that for alternating S1 and S2 ?110? steps, the ratio ?1/?2=0.72±0.02. The parameter ? and, hence, absolute orientation-dependent values of ?(?) and step stiffnesses ??(?) were extracted from quantitative shape fluctuation data using an exact theoretical approach valid for anisotropic islands. For the two ?110? steps, we obtain ?1=0.23±0.05 and ??1=1.9±1.1 eV/Å with ?2=0.33±0.07 and ??2=0.08±0.02 eV/Å over the observed temperature range. Due to the correspondingly high kink energies, TiN(111) step energies exhibit only a very weak temperature dependence between 0 K and the maximum measurement temperature 1248 K.

S. Kodambaka; S. V. Khare; V. Petrova; D. D. Johnson; I. Petrov; J. E. Greene

2003-01-16T23:59:59.000Z

211

Efficient dehydration of carbohydrates to 5-hydroxymethylfurfural in ionic liquids catalyzed by tin(IV) phosphonate and zirconium phosphonate  

Science Journals Connector (OSTI)

In this work, we synthesized tin(IV) phosphonate (SnBPMA) and zirconium phosphonate (ZrBPMA) by the reaction of SnCl4·5H2O or ZrOCl2·8H2O with N,N...-bis(phosphonomethyl)aminoacetic acid, which was synthesized fr...

Hui Ning; JinLiang Song; MinQiang Hou; DeZhong Yang; HongLei Fan…

2013-11-01T23:59:59.000Z

212

Evaluation of four-center integrals with the linear muffin-tin orbital tight-binding method  

Science Journals Connector (OSTI)

We derive formulas for the general four-center integral and its Bloch sum within the basis of optimally localized muffin-tin orbitals in the atomic spheres approximation. As an example of application the Hartree and exchange energies of silicon are calculated and the cohesive energy determined in the local-density and Hartree-Fock approximations.

A. Svane and O. K. Andersen

1986-10-15T23:59:59.000Z

213

Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions  

DOE Patents [OSTI]

The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Mausner, Leonard F. (Stony Brook, NY); Atkins, Harold L. (Setauket, NY)

1998-12-29T23:59:59.000Z

214

Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions  

DOE Patents [OSTI]

The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients. 5 figs.

Srivastava, S.C.; Meinken, G.E.; Mausner, L.F.; Atkins, H.L.

1998-12-29T23:59:59.000Z

215

Two ways to perform spin-polarized relativistic linear muffin-tin-orbital calculations  

Science Journals Connector (OSTI)

Two spin-polarized relativistic versions of the linear muffin-tin-orbital method of band-structure calculations are presented. The first one is a pseudoperturbational method taking the effect of spin splitting only into account within the variational step. The second one treats spin polarization and spin-orbit coupling on the same level by making use of the proper solutions to the Dirac equation for a spin-dependent potential. Both approaches permit a detailed theoretical study of magnetocrystalline anisotropy effects. Results for the band structure, the spin and orbital magnetic moments and the conduction-band contribution to the hyperfine fields of Fe, Co, and Ni obtained by these methods are presented and compared to data obtained by an application of the spin-polarized version of the relativistic Korringa-Kohn-Rostoker method.

H. Ebert

1988-11-15T23:59:59.000Z

216

“One-Pot” Synthesis of 5-(Hydroxymethyl)furfural from Carbohydrates using Tin-Beta Zeolite  

SciTech Connect (OSTI)

Conversion of carbohydrates to 5-(hydroxymethyl)furfural (HMF) may provide a step forward toward achieving a renewable biomass-based chemicals and fuels platform. Recently, we reported that a tin-containing, high-silica molecular sieve with the zeolite beta topology (Sn-Beta) can efficiently catalyze the isomerization of glucose to fructose in aqueous media at low pH. Herein, we describe the combination of Sn-Beta with acid catalysts in a one vessel, biphasic reactor system to synthesize HMF from carbohydrates such as glucose, cellobiose, and starch with high efficiency. HMF selectivities over 70% were obtained using this “one-pot” biphasic water/tetrahydrofuran (THF) reactor system. The key to successfully achieving the conversions/selectivities reported is that Sn-Beta is able to convert glucose to fructose at pH near 1 and in saturated aqueous salt solutions.

Nikolla, E; Roman-Leshkov, Yuriy; Moliner, Manuel; Davis, Mark E.

2011-01-01T23:59:59.000Z

217

FEAST fundamental framework for electronic structure calculations: Reformulation and solution of the muffin-tin problem  

Science Journals Connector (OSTI)

In a recent article Polizzi (2009) [15], the FEAST algorithm has been presented as a general purpose eigenvalue solver which is ideally suited for addressing the numerical challenges in electronic structure calculations. Here, FEAST is presented beyond the “black-box” solver as a fundamental modeling framework which can naturally address the original numerical complexity of the electronic structure problem as formulated by Slater in 1937 [3]. The non-linear eigenvalue problem arising from the muffin-tin decomposition of the real-space domain is first derived and then reformulated to be solved exactly within the FEAST framework. This new framework is presented as a fundamental and practical solution for performing both accurate and scalable electronic structure calculations, bypassing the various issues of using traditional approaches such as linearization and pseudopotential techniques. A finite element implementation of this FEAST framework along with simulation results for various molecular systems is also presented and discussed.

Alan R. Levin; Deyin Zhang; Eric Polizzi

2012-01-01T23:59:59.000Z

218

Electrochemical Quartz Crystal Microbalance Studies of Electron Addition at Nanocrystalline Tin Oxide/Water and Zinc Oxide/Water Interfaces: Evidence for  

E-Print Network [OSTI]

with previous results for titanium dioxide in nonaqueous electrolytes, suggest that charge-compensating cation that electron addition to the nanocrys- talline titanium dioxide/nonaqueous electrolyte interface is accompanied quantitatively by the intercalation of charge- compensating alkali metal cations or by adsorption of larger

219

Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt  

SciTech Connect (OSTI)

The problem regarding the distribution of aluminum and indium impurities in bulk crystals of solid solutions with a variable composition Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.3) is solved in order to establish regularities of the changes in the segregation coefficients of impurities with variations in the composition of the host lattice in the germanium-silicon system. Aluminum-and indium-doped crystals of Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.3) solid solutions with a silicon content decreasing along the crystallization axis are grown by a modified Bridgman method with the use of a silicon seed. The concentration distribution of impurities over the length of the crystals is determined from Hall measurements. It is demonstrated that the experimental data on the concentration distribution of impurities in the crystals are in good agreement with the results obtained from the theory according to which the equilibrium segregation coefficients of impurities vary linearly with a change in the composition of Ge-Si solid solution crystals.

Kyazimova, V. K. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: zangi@physics.ab.az; Zeynalov, Z. M. [Ganja State University (Azerbaijan); Zakhrabekova, Z. M.; Azhdarov, G. Kh. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2006-12-15T23:59:59.000Z

220

Evaluation of critical materials for five advanced design photovoltaic cells with an assessment of indium and gallium  

SciTech Connect (OSTI)

The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. This report presents the results of the screening of the five following advanced PV cell designs: polycrystalline silicon, amorphous silicon, cadmium sulfide/copper sulfide frontwall, polycrystalline gallium arsenide MIS, and advanced concentrator-500X. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 GWe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has 5 GWe of peak capacity by the year 2000, so that the total online cpacity for the five cells is 25 GWe. Based on a review of the preliminary basline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. Earlier DOE sponsored work on the assessment of critical materials in PV cells conclusively identtified indium and gallium as warranting further investigation as to their availability. Therefore, this report includes a discussion of the future availability of gallium and indium. (WHK)

Watts, R.L.; Gurwell, W.E.; Jamieson, W.M.; Long, L.W.; Pawlewicz, W.T.; Smith, S.A.; Teeter, R.R.

1980-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

FUNDAMENTAL MIXING AT 9.05 GHz USING INDIUM MICR0BRIDGES+ W.H. Howard, M.B. Stern and Y.H. Kao  

E-Print Network [OSTI]

FUNDAMENTAL MIXING AT 9.05 GHz USING INDIUM MICR0BRIDGES+ W.H. Howard, M.B. Stern and Y.H. Kao made on single-bridge samples and on series arrays of microbridges. INTRODUCTION.- Josephson point by a micro- bridge array. The rod was then mounted in the wave- guide parallel to.the short dimension, so

Paris-Sud XI, Université de

222

Mon. Not. R. Astron. Soc. 384, 370375 (2008) doi:10.1111/j.1365-2966.2007.12708.x On the solar abundance of indium  

E-Print Network [OSTI]

for the solar abundance of indium is over six times higher than the meteoritic value. We address meteoritic and solar abundance values. In this paper, we address this problem by considering the nucleosyntheMon. Not. R. Astron. Soc. 384, 370­375 (2008) doi:10.1111/j.1365-2966.2007.12708.x On the solar

Rutten, Rob

223

Cascade Organic Solar Cells  

Science Journals Connector (OSTI)

Cascade Organic Solar Cells ... Multiple factors control the efficiency of organic solar cells, making it difficult to use single donor or acceptor materials to balance the, often opposing, material properties required to optimize device performance. ... We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C60/bathocuproine/Al. ...

Cody W. Schlenker; Vincent S. Barlier; Stephanie W. Chin; Matthew T. Whited; R. Eric McAnally; Stephen R. Forrest; Mark E. Thompson

2011-09-02T23:59:59.000Z

224

Third-Harmonic Generation Enhancement by Film-Coupled Plasmonic Stripe Resonators  

Science Journals Connector (OSTI)

J. Britt Lassiter †‡, Xiaoshu Chen §, Xiaojun Liu †‡, Cristian Ciracì †?, Thang B. Hoang †‡?, Stéphane Larouche †‡, Sang-Hyun Oh §, Maiken H. Mikkelsen †‡?, and David R. Smith *†‡? ... (6, 7) While traditionally, nonlinear conversion has been limited to bulk crystalline materials that take advantage of phase matching, recently it has been shown that nanoscale plasmonic structures can also be used as media for nonlinear optics. ... They are embedded in a nonlinear medium (indium tin oxide) that acts as a receiver. ...

J. Britt Lassiter; Xiaoshu Chen; Xiaojun Liu; Cristian Ciracì; Thang B. Hoang; Stéphane Larouche; Sang-Hyun Oh; Maiken H. Mikkelsen; David R. Smith

2014-10-21T23:59:59.000Z

225

Disorder-free sputtering method on graphene  

SciTech Connect (OSTI)

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

Qiu Xue Peng; Shin Young Jun; Niu Jing; Kulothungasagaran, Narayanapillai [Department of Electrical and Computer Engineering, National University of Singapore, 117576 (Singapore); Kalon, Gopinadhan; Yang, Hyunsoo [Department of Electrical and Computer Engineering, National University of Singapore, 117576 (Singapore); Graphene Research Centre, National University of Singapore, 117546 (Singapore); Qiu Caiyu [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637616 (Singapore); Yu Ting [Graphene Research Centre, National University of Singapore, 117546 (Singapore); Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637616 (Singapore)

2012-09-15T23:59:59.000Z

226

Effect of TiN coatings on the rolling contact fatigue behavior of M50 bearing steel. Final report  

SciTech Connect (OSTI)

There is a continuing requirement for improved bearing performance for both commercial and military applications. Service temperatures are increasing steadily due to increased power requirements and corrosion of components remains a major concern as well, particularly for bearings in military systems. In our ongoing study, a number of different coatings were applied to VIM-VAR M50 bearing steel to improve both corrosion resistance and rolling contact fatigue behavior. This report deals specifically with coatings produced by the ion beam assisted deposition IBAD of TiN, details of the coating process, and test results obtained. The rolling contact fatigue performance of IBAD TiN coated M50 samples demonstrated increased lifetime performance and durability for a 1 micrometer thick coating. Preliminary data on corrosion properties is also presented.

Middleton, R.M.; Huang, P.J.; Wells, M.G.; Kant, R.A.

1992-12-01T23:59:59.000Z

227

Asphalt Oxidation Kinetics and Pavement Oxidation Modeling  

E-Print Network [OSTI]

Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement...

Jin, Xin

2012-07-16T23:59:59.000Z

228

Graphene: A New Era of Technology  

E-Print Network [OSTI]

Abstract — The aim of this literature indicate that graphene composites are promising multifunctional materials with improved tensile strength and elastic modulus, mechanical strength, optical property, electrical and thermal conductivity. Its unique quality light weight, high strength, excellent electric conductivity makes it differ from any other material. It has ability to replace the silicon and change the scenario of semiconductor devices. It is a base of nano technology. Due to its unique properties, it will sets the new dimension in the nano techno world. Keywords — Molybdenum-disulphide (MoS 2), chemically reduced graphene oxide (CRGO), indium tin oxide (ITO), graphene oxide (GO), thermally reduce graphene oxide (TRGO) I.

Ankita Dixit; Divya Dixit; Vidhi Vart Ch; Ashok Kajla

229

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells  

SciTech Connect (OSTI)

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

Sowinska, Malgorzata, E-mail: sowinska@ihp-microelectronics.com; Bertaud, Thomas; Walczyk, Damian; Calka, Pauline; Walczyk, Christian [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Thiess, Sebastian [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Alff, Lambert [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-05-28T23:59:59.000Z

230

Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin  

SciTech Connect (OSTI)

Silicon (Si) has a very high lithium storage capacity and is being explored as a negative electrode material in lithium-ion batteries (LIBs). Si nanowires can exhibit relatively stable performance for many cycles of charging; however, conductive carbon must often be added to the electrode layer to improve the rate capability due to the relatively low electrical conductivity of Si. The added carbon lowers the capacity of the electrode. Here, we show that the rate capability of Si in LIBs can be substantially enhanced by incorporating tin (Sn) into Si nanowires. The solubility of Sn in Si is very low (0.015 at%); yet, Sn used as a seed for supercritical fluid–liquid–solid (SFLS) growth can be trapped in Si nanowires with relatively high concentration (10 at%). Such Sn-containing Si nanowires and no added conductive carbon in the electrode layer, could be cycled in LIBs with high capacity (*1000 mA h g*1 over 100 cycles) at a current density of 2.8 A g*1 (1 C). Capacities exceeding that of graphite could still be reached at cycle rates as high as 2 C. Real-time in situ transmission electron microscopy (TEM) revealed that lithiation occurs five times faster in Si nanowires with significant amounts of Sn than in the Si nanowires without Sn, and twice as fast as in nanowires that were coated with carbon.

Bogart, Timothy D.; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

2014-10-30T23:59:59.000Z

231

The de Haas-van Alphen Effect in Enriched Tin Isotopes  

Science Journals Connector (OSTI)

The de Haas-van Alphen effect has been investigated in tin isotopes in the liquid helium temperature range, and no conclusive evidence has been found indicating a dependence of the effect upon atomic mass. However, some new features of the effect have been investigated which are interpreted as being caused by at least two independent groups of electrons. One group of electrons, having effective masses m3=1.1m0 (where m0 is the free electron mass) parallel to the tetragonal axis and m1=0.16m0 perpendicular to the tetragonal axis, and having a chemical potential of E0=0.25 electron volt, gives rise to short period oscillations in the magnetic susceptibility as the magnetic field is varied. A second group of electrons having a chemical potential E0=0.20 electron volts and for which the effective masses are not so clearly defined gives rise to longer period oscillations such that the observed de Haas-van Alphen oscillations exhibit beats between the long and short period terms.

Ted G. Berlincourt

1952-10-15T23:59:59.000Z

232

Novel Catalyst Support Materials for PEM Fuel Cells: Current Status and Future Prospects  

SciTech Connect (OSTI)

The catalyst supports exhibit great influence on the cost, performance, and durability of polymer electrolyte membrane (PEM) fuel cells. This review paper is to summarize several important kinds of novel support materials for PEM fuel cells (including direct methanol fuel cell, DMFC): nanostructured carbon materials (carbon nanotubes/carbon nanofibers, mesoporous carbon), conductive doped diamonds and nanodiamonds, conductive oxides (tin oxide/indium tin oxide, titanium oxide, tungsten oxide) and carbides (tungsten carbides). The advantages and disadvantages, the acting mechanism to promote electrocatalysis, and the strategies to improve present catalyst support materials and to search for new ones are discussed. This is expected to throw light on future development of catalyst support for PEM fuel cells.

Shao, Yuyan; Liu, Jun; Wang, Yong; Lin, Yuehe

2008-12-15T23:59:59.000Z

233

Tin-containing zeolites are highly active catalysts for the isomerization of glucose in water  

SciTech Connect (OSTI)

The isomerization of glucose into fructose is a large-scale reaction for the production of high-fructose corn syrup (HFCS; reaction performed by enzyme catalysts) and recently is being considered as an intermediate step in the possible route of biomass to fuels and chemicals. Here, it is shown that a large-pore zeolite that contains tin (Sn-Beta) is able to isomerize glucose to fructose in aqueous media with high activity and selectivity. Specifically, a 10% (wt/wt) glucose solution containing a catalytic amount of Sn-Beta (1?50 Sn:glucose molar ratio) gives product yields of approximately 46% (wt/wt) glucose, 31% (wt/wt) fructose, and 9% (wt/wt) mannose after 30 min and 12 min of reaction at 383 K and 413 K, respectively. This reactivity is achieved also when a 45 wt% glucose solution is used. The properties of the large-pore zeolite greatly influence the reaction behavior because the reaction does not proceed with a medium-pore zeolite, and the isomerization activity is considerably lower when the metal centers are incorporated in ordered mesoporous silica (MCM-41). The Sn-Beta catalyst can be used for multiple cycles, and the reaction stops when the solid is removed, clearly indicating that the catalysis is occurring heterogeneously. Most importantly, the Sn-Beta catalyst is able to perform the isomerization reaction in highly acidic, aqueous environments with equivalent activity and product distribution as in media without added acid. This enables Sn-Beta to couple isomerizations with other acid-catalyzed reactions, including hydrolysis/isomerization or isomerization/dehydration reaction sequences [starch to fructose and glucose to 5-hydroxymethylfurfural (HMF) demonstrated here].

Moliner, Manuel; Roman-Leshkov, Yuriy; Davis, Mark E.

2010-01-01T23:59:59.000Z

234

Initial stages of ITO/Si interface formation: In situ x-ray photoelectron spectroscopy measurements upon magnetron sputtering and atomistic modelling using density functional theory  

SciTech Connect (OSTI)

Initial stages of indium tin oxide (ITO) growth on a polished Si substrate upon magnetron sputtering were studied experimentally using in-situ x-ray photoelectron spectroscopy measurements. The presence of pure indium and tin, as well as Si bonded to oxygen at the ITO/Si interface were observed. The experimental observations were compared with several atomistic models of ITO/Si interfaces. A periodic model of the ITO/Si interface was constructed, giving detailed information about the local environment at the interface. Molecular dynamics based on density functional theory was performed, showing how metal-oxygen bonds are broken on behalf of silicon-oxygen bonds. These theoretical results support and provide an explanation for the present as well as previous ex-situ and in-situ experimental observations pointing to the creation of metallic In and Sn along with the growth of SiO{sub x} at the ITO/Si interface.

Løvvik, O. M.; Diplas, S.; Ulyashin, A. [SINTEF Materials and Chemistry, Forskningsveien 1, NO-0314 Oslo (Norway); Romanyuk, A. [University of Basel, Kingelbergstr. 82, CH-4056 Basel (Switzerland)

2014-02-28T23:59:59.000Z

235

Oxidation of propylene over copper oxide catalysts  

E-Print Network [OSTI]

to the study of propylene oxidation. Dunlop (17) reported that small quantities of iron compounds substantially enhanced the catalytic activity of chromia-alumina catalysts with respect to propylene oxidation, Woodharn (72) has suggested that under... between 360 C and 430oC the rate of propane oxidation decreases as the teznperature is increased, and the rate of conversion to olefins, especially propylene, becomes progressively greater. Above 430 C the proportion of propane converted to ethylene in...

Billingsley, David Stuart

2012-06-07T23:59:59.000Z

236

Linear muffin-tin-orbital and k?p calculations of effective masses and band structure of semiconducting diamond  

Science Journals Connector (OSTI)

The electronic structure of semiconducting diamond is calculated by the scalar-relativistic linear muffin-tin-orbital method within the local-density approximation. Information about matrix elements, effective masses, and Luttinger parameters is extracted by comparison with k?p calculations. An extended 16×16 k?p calculation is performed using the parameters above as input so as to obtain the detailed band structure of the higher valence and lower conduction band states around the ? point in the (110) direction.

M. Willatzen; M. Cardona; N. E. Christensen

1994-12-15T23:59:59.000Z

237

Evolution of optical properties of tin film from solid to liquid studied by spectroscopic ellipsometry and ab initio calculation  

SciTech Connect (OSTI)

The temperature dependent optical properties of tin film from solid to liquid were studied by spectroscopic ellipsometry and ab initio molecular dynamics simulations. The dielectric function of liquid Sn was different from solid, and an interband transition near 1.5?eV was easily observed in solid while it apparently disappeared upon melting. From the evolution of optical properties with temperature, an optical measurement to acquire the melting point by ellipsometry was presented. From first principles calculation, we show that the local structure difference in solid and liquid is responsible for this difference in the optical properties observed in experiment.

Zhang, D. X.; Shen, B.; Zheng, Y. X.; Wang, S. Y.; Zhang, J. B.; Yang, S. D.; Zhang, R. J.; Chen, L. Y.; Wang, C. Z.; Ho, K. M.

2014-03-24T23:59:59.000Z

238

Effect of Anisotropic Volume Change in Tin Phosphate Nanoparticle Anode Material with Mesocellular Foam Structure  

E-Print Network [OSTI]

, PO = propylene oxide . This material has a mesocelluar foam structure. Experimental Pluronic P123 10 g, BASF were dissolved in 40 mL of distilled water into which 8.8 g of H3PO4 had been previously

Cho, Jaephil

239

Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

A Solid Oxide Fuel Cell (SOFC) is typically composed of two porous electrodes, interposed between an electrolyte made of a particular solid oxide ceramic material. The system originates from the work of Nernst...

Nigel M. Sammes; Roberto Bove; Jakub Pusz

2006-01-01T23:59:59.000Z

240

Comparative and quantitative study of neutral debris emanated from tin plasmas produced by neodymium-doped yttrium-aluminum-garnet and carbon dioxide laser pulses  

SciTech Connect (OSTI)

Amount of neutral debris emanated from extreme ultraviolet light source must be minimized to maximize its lifetime. Emanation of neutral atomic debris was experimentally investigated using laser-induced-fluorescence technique for carbon dioxide (CO{sub 2}, 10.6 {mu}m in wavelength) and Nd-doped yttrium-aluminum-garnet (Nd:YAG, 1.064 {mu}m) lasers irradiated tin foils. Total number of neutral atomic debris from CO{sub 2} laser-irradiated tin foils was 1/100 times smaller than that from Nd:YAG irradiated ones. Competitiveness of CO{sub 2} laser was revealed in terms of debris mitigation.

Matsuoka, Yuji; Nakai, Yuki; Fujioka, Shinsuke; Maeda, Shinsuke; Shimomura, Masashi; Nishimura, Hiroaki [Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Osaka 565-0871 (Japan); Shimada, Yoshinori; Sunahara, Atsushi [Institute for Laser Technology, Osaka University, 2-6 Yamada-Oka, Osaka 565-0871 (Japan); Yoshida, Minoru [Department of Electronics and Electronic Engineering, Kinki University, 3-4-1 Kowakae, Osaka 577-8502 (Japan)

2010-09-13T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique  

Science Journals Connector (OSTI)

The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

K. Ravichandran; V. Senthamilselvi

2013-01-01T23:59:59.000Z

242

Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint  

SciTech Connect (OSTI)

Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

2012-08-01T23:59:59.000Z

243

First-principles real-space linear-muffin-tin-orbital calculations of 3d impurities in Cu  

Science Journals Connector (OSTI)

We have recently developed a scheme, based on the linear-muffin-tin-orbital (LMTO) formalism in the atomic-sphere approximation (ASA) and the recursion method, which allows us to perform first-principles, spin-polarized, density-functional electronic-structure calculations in real space. Here we use the real-space linear-muffin-tin-orbital (RS-LMTO-ASA) approach to study the behavior of 3d impurities (V,Cr,Mn,Fe) in a Cu host. We obtain the local density of states, the charge transfers, and local magnetic moments of the impurity and four adjacent shells of Cu atoms. Even though the procedures are quite different, our results for 3d impurities in Cu agree very well with those obtained using the well-established ab initio Korringa-Kohn-Sham Green’s-function formalism. The RS-LMTO-ASA method does not require symmetry and can be used, with no extra effort, to study interstitial impurities and local disturbances in hosts with hcp or more complex structures. It can also be applied in the presence of lattice relaxation.

Sonia Frota-Pesso^a

1992-12-01T23:59:59.000Z

244

Transverse stress effect on the critical current of internal tin and bronze process Nb{sub 3}Sn superconductors  

SciTech Connect (OSTI)

The effect of transverse stress on the critical current density, J{sub c}, has been shown to be significant in bronze process Nb{sub 3}Sn, with the onset of significant degradation at about 50 Mpa. In an applied field of 10 T, the magnitude of the effect is about seven times larger for transverse stress than for axial tensile stress. In a subsequent study, similar results were observed in another bronze process Nb{sub 3}Sn conductor made by a different manufacturer. The mechanism accounting for the transverse stress effect and its large magnitude compared with the axial tensile effect is still the subject of speculation. In an attempt to better understand the nature of the effect, The authors have undertaken a series of experiments to determine whether the transverse stress effect depends on the grain morphology of the Nb{sub 3}Sn reaction layer in the superconductor. To do this, the authors have measured the effect in an internal tin conductor with excess tin, which yields a more equiaxed Nb{sub 3}Sn grain morphology than for bronze process Nb{sub 3}Sn, where the grains are more columnar. The results for the effect of transverse compression on the J{sub c} of a round bronze process Nb{sub 3}Sn wire are given. The data are probably applicable to a wide variety of Nb{sub 3}Sn conductors for magnet engineering.

Ekin, J.W.; Bray, S.L. [National Inst. of Standards and Technology, Boulder, CO (United States); Danielson, P.; Smathers, D. [Teledyne Wah Chang, Albany, OR (United States); Sabatini, R.L.; Suenaga, M. [Brookhaven National Lab., Upton, NY (United States)

1989-12-31T23:59:59.000Z

245

Ternary Pt/Rh/SnO2 Electrocatalysts for Oxidizing Ethanol to CO2  

SciTech Connect (OSTI)

Ethanol, with its high energy density, likely production from renewable sources and ease of storage and transportation, is almost the ideal combustible for fuel cells wherein its chemical energy can be converted directly into electrical energy. However, commercialization of direct ethanol fuel cells has been impeded by ethanol's slow, inefficient oxidation even at the best electrocatalysts. We synthesized a ternary PtRhSnO{sub 2}/C electrocatalyst by depositing platinum and rhodium atoms on carbon-supported tin dioxide nanoparticles that is capable of oxidizing ethanol with high efficiency and holds great promise for resolving the impediments to developing practical direct ethanol fuel cells. This electrocatalyst effectively splits the C-C bond in ethanol at room temperature in acid solutions, facilitating its oxidation at low potentials to CO{sub 2}, which has not been achieved with existing catalysts. Our experiments and density functional theory calculations indicate that the electrocatalyst's activity is due to the specific property of each of its constituents, induced by their interactions. These findings help explain the high activity of Pt-Ru for methanol oxidation and the lack of it for ethanol oxidation, and point to the way to accomplishing the C-C bond splitting in other catalytic processes.

Adzic, R.R.; Kowal, A.; Li, M.; Shao, M.; Sasaki, K.; Vukmirovic, M.B.; Zhang, J.; Marinkovic, N.S. Liu, P.; Frenkel, A.I.

2009-04-01T23:59:59.000Z

246

Ternary Pt/Rh/SnO2 Electrocatalysts for Oxidizing Ethanol to CO2  

SciTech Connect (OSTI)

Ethanol, with its high energy density, likely production from renewable sources and ease of storage and transportation, is almost the ideal combustible for fuel cells wherein its chemical energy can be converted directly into electrical energy. However, commercialization of direct ethanol fuel cells has been impeded by ethanol's slow, inefficient oxidation even at the best electrocatalysts1, 2. We synthesized a ternary PtRhSnO2/C electrocatalyst by depositing platinum and rhodium atoms on carbon-supported tin dioxide nanoparticles that is capable of oxidizing ethanol with high efficiency and holds great promise for resolving the impediments to developing practical direct ethanol fuel cells. This electrocatalyst effectively splits the C-C bond in ethanol at room temperature in acid solutions, facilitating its oxidation at low potentials to CO2, which has not been achieved with existing catalysts. Our experiments and density functional theory calculations indicate that the electrocatalyst's activity is due to the specific property of each of its constituents, induced by their interactions. These findings help explain the high activity of Pt-Ru for methanol oxidation and the lack of it for ethanol oxidation, and point to the way to accomplishing the C-C bond splitting in other catalytic processes.

Kowal, A.; Li, M; Shao, M; Sasaki, K; Vukmirovic, M; Zhang, J; Marinkovic, N; Liu, P; Frenkel, A; Adzic, R

2009-01-01T23:59:59.000Z

247

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide  

E-Print Network [OSTI]

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO) and reduced graphene oxide (rGO) films grown on silicon substrate to cause the aniline to azobenzene oxidation

Kim, Sehun

248

Oxidation Resistant Graphite Studies  

SciTech Connect (OSTI)

The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740°C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

W. Windes; R. Smith

2014-07-01T23:59:59.000Z

249

Ab initio Molecular Dynamics and Elastic Properties of TiC and TiN Nanoparticles A. V. Postnikov and P. Entel  

E-Print Network [OSTI]

Ab initio Molecular Dynamics and Elastic Properties of TiC and TiN Nanoparticles A. V. Postnikov composition and compared to frozen phonon and molecular dynamics calculations for crystalline TiC and Ti range of frequencies, including the phonon band gap of pure crystalline TiC (near 15 THz). Similar

Entel, P.

250

Improvement of corrosion and electrical conductivity of 316L stainless steel as bipolar plate by TiN nanoparticle implantation using plasma focus  

Science Journals Connector (OSTI)

The present work reports the results of TiN-ions implantation into the SS316L samples as bipolar plates by a 4 kJ Mather type Plasma Focus (PF) device operated with nitrogen gas for 10, 20, and 30 shots in order to improve the corrosion resistance and electrical conductivity of samples. The PF can generate short lived (10–100 ns) but high temperature (0.1–2.0 keV) and high density (1018–1020 cm?3) plasma, and the whole process of PF lasts just a few microseconds. X-ray diffraction (XRD) results reveal the formation of a nanocrystalline titanium nitride coating on the surface of substrate. The interfacial contact resistance (ICR) of samples is measured, and the results show that the conductivity of samples increase after coating because of high electrical conductivity of TiN coating. The electrochemical results show that the corrosion resistances are significantly improved when TiN films are deposited into SS316L substrate. The corrosion potential of the TiN coated samples increases compared with that of the bare SSI316L and corrosion currents decrease in TiN implanted samples. Scanning Electron Microscopy (SEM) indicates changes in surface morphology before and after potentiostatic test. The thickness of coated layer which is obtained by cross sectional SEM is about 19 ?m.

Malihe Omrani; Morteza Habibi; Reza Amrollahi; Arash Khosravi

2012-01-01T23:59:59.000Z

251

Characterization of TiN, TiC and TiCN coatings on Ti50.6 at.% Ni alloy deposited by PIII and deposition technique  

E-Print Network [OSTI]

high content of nickel [1]. In addition, its wear resistance is expected to be improved by transition-metal as nitride, carbide and carbonitride, respectively. Based on the electrochemical measurement and ion carbides and nitrides coatings at a rather broad composition range, such as TiN, TiC and TiC1-xNx (0bÃ?b1

Zheng, Yufeng

252

METAL OXIDE NANOPARTICLES  

SciTech Connect (OSTI)

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

253

Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae=Ca,Sr,Ba, as thermoelectric materials  

SciTech Connect (OSTI)

We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2 Sn, Sr2 Sn and Ba2 Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli - roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature.

Parker, David S [ORNL; Singh, David J [ORNL

2013-01-01T23:59:59.000Z

254

Physical properties of highly oriented spray-deposited fluorine-doped tin dioxide films as transparent conductor  

Science Journals Connector (OSTI)

Heavily fluorine-doped tin dioxide films were deposited by spray pyrolysis using a high precursor concentration. The effect of film thickness was studied in the range 80–1230 nm. The films were polycrystalline and preferentially oriented along [2 0 0]. The grain size, carrier mobility ?, carrier concentration N and resistivity reached ?230 nm, 35 cm2/V s, 6×1020 cm?3 and 3×10?4 ? cm, respectively, for 1000 nm films. An unusual ‘direct and linear’ ?–N dependence revealed the importance of the structural properties. The 1000 nm thick films possessed an average visible transmittance ?81% and a reflectance ?66% at 2500 nm. The electro-optical properties revealed their excellent quality as a TCO material.

Chitra Agashe; J. Hüpkes; G. Schöpe; M. Berginski

2009-01-01T23:59:59.000Z

255

Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors  

Science Journals Connector (OSTI)

As stabilizers, monoethanolamine (MEA) and acetic acid (CH3COOH) were dropped to ameliorate the solubility of the precursors and make a homogeneous IGZO solution, respectively. ... Prepared DNA-covered mica sheet was attached onto the metal puck using instant glue and 5 ?L of DX solution, 30 ?L of 1 × TAE/Mg2+ buffer was dropped onto the mica and 10 ?L of 1 × TAE/Mg2+ buffer was mounted onto the AFM tip (A NP-S oxide-sharpened silicon nitride tip). ... The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. ...

Si Joon Kim; Joohye Jung; Keun Woo Lee; Doo Hyun Yoon; Tae Soo Jung; Sreekantha Reddy Dugasani; Sung Ha Park; Hyun Jae Kim

2013-09-27T23:59:59.000Z

256

Electrode with transparent series resistance for uniform switching of optical modulation devices  

DOE Patents [OSTI]

Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

Tench, D. Morgan (Camarillo, CA); Cunningham, Michael A. (Thousand Oaks, CA); Kobrin, Paul H. (Newbury Park, CA)

2008-01-08T23:59:59.000Z

257

?-Extended and Six-Coordinate Iron(II) Complexes: Structures, Magnetic Properties, and the Electrochemical Synthesis of a Conducting Iron(II) Metallopolymer  

Science Journals Connector (OSTI)

Indium tin oxide (ITO) coated borosilicate glass cuvette slides (5–15 ohms) were purchased from Delta Technologies, Ltd. 1H/13C NMR spectra were recorded on a Bruker Advance 300 MHz spectrometer with a 7.05 T Ultrashield magnet using deuterated solvents. ... Epsilon electrochemical workstation. ... Iron(II) complexes with neutral and oxidized tetrathiafulvalene (TTF) moieties, 2,6-bis(pyrazol-1-yl)-4-(2-(tetrathiafulvaleneyl)ethenyl)pyridine (L), [FeL2](BPh4)2·MeNO2·0.5Et2O ...

Brandon Djukic; Takele Seda; Serge I. Gorelsky; Alan J. Lough; Martin T. Lemaire

2011-07-06T23:59:59.000Z

258

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

1988-01-01T23:59:59.000Z

259

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04T23:59:59.000Z

260

Ethylene Oxide Explosions  

Science Journals Connector (OSTI)

... THE occasional occurrence of ethylene oxide explosions during the fumigation of dried fruit has led us to undertake a detailed ... yielded results somewhat like those for acetaldehyde1,2.. Cool flames can be initiated in ethylene oxide – air mixtures in the neighbourhood of 330° C. at atmospheric pressure. ...

J. H. BURGOYNE; F. A. BURDEN

1948-07-31T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Oxidative Degradation of Monoethanolamine  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Oxidative Degradation of Monoethanolamine Oxidative Degradation of Monoethanolamine Susan Chi Gary T. Rochelle* (gtr@che.utexas.edu, 512-471-7230) The University of Texas at Austin Department of Chemical Engineering Austin, Texas 78712 Prepared for presentation at the First National Conference on Carbon Sequestration, Washington, DC, May 14-17, 2001 Abstract Oxidative degradation of monoethanolamine (MEA) was studied under typical absorber condition of 55°C. The rate of evolution of NH 3 , which was indicative of the overall rate of degradation, was measured continuously in a batch system sparged with air. Dissolved iron from 0.0001 mM to 1 mM yields oxidation rates from 0.37 to 2 mM/hr in MEA solutions loaded with 0.4 mole CO 2 / mole MEA. Ethylenediaminetetraacetic acid (EDTA) and N,N-bis(2- hydroxyethyl)glycine effectively decrease the rate of oxidation in the presence of iron by 40 to

262

Phase-Transfer-Catalyzed Oxidations  

Science Journals Connector (OSTI)

Phase-transfer catalysis (PTC) offers many excellent opportunities for conducting oxidation reactions using inexpensive primary oxidants such as oxygen, sodium hypochlorite, hydrogen peroxide, electrooxidation...

Charles M. Starks; Charles L. Liotta; Marc E. Halpern

1994-01-01T23:59:59.000Z

263

Nanostructured Transparent Conducting Oxides via Blockcopolymer Patterning  

E-Print Network [OSTI]

for transparent electrodes in optoelectronic devices. However, the high cost and scarcity of indium as well as di#0;culties of processing ITO has motivated a search for other materials that can potentially replace ITO as demand grows. Com- monly investigated...

Kim, Joung Youn Ellie

2014-05-27T23:59:59.000Z

264

Regenerative catalytic oxidation  

SciTech Connect (OSTI)

Currently Regenerative Thermal Oxidizers (R.T.O.`s) are an accepted technology for the control of volatile organic compounds (VOC`s) and hazardous air pollutants (HAP`s). This control technology, when introduced, offered substantial reductions in operating costs, especially auxiliary fuel requirements when compared to existing control technologies such as recuperative thermal and recuperative catalytic oxidizers. While these savings still exist, there is a demand for control of new and/or hybrid technologies, one of which is Regenerative Catalytic Oxidizers (R.C.O.`s). This paper will explore the development of regenerative catalytic oxidation from the theoretical stage through pilot testing through a commercial installation. The operating cost of R.C.O.`s will be compared to R.T.O.`s to verify the savings that are achievable through the use of regenerative catalytic oxidation. In the development of this technology, which is a combination of two (2) existing technologies, R.T.O.`s and catalysis, a second hybrid technology was explored and pilot tested. This is a combination R.C.O. for VOC and HAP control and simultaneous SCR (Selective Catalytic Reduction) for NOx (Oxides of Nitrogen) control. Based on the pilot and full scale testing, both regenerative catalytic oxidizers and systems which combine R.C.O. with SCR for both VOC and NOx reduction are economically viable and are in fact commercially available. 6 figs., 2 tabs.

Gribbon, S.T. [Engelhard Process Emission Systems, South Lyon, MI (United States)

1996-12-31T23:59:59.000Z

265

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL  

E-Print Network [OSTI]

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL CELLS Dynamic Simulation Approach Modular Approach · Parallel planes: PSOFC · Other: combustor, reformer Solid Oxide Fuel Cell Electrochemistry Cell Reactions · Slow pressure transients #12;Fuel Cell Assumptions · H2 electrochemically oxidized only · CO consumed

Mease, Kenneth D.

266

Strong Sulfur Binding with Conducting Magneli-Phase TinO2n-1 Nanomaterials for Improving Lithium-Sulfur Batteries  

E-Print Network [OSTI]

will go through a series of soluble intermediate higher-order polysulfides (Li2S8, Li2S6, and Li2S4 of Li2S2, Li2S, and sulfur.6-8 In order to solve these challenges, there have been recent developmentsStrong Sulfur Binding with Conducting Magneli-Phase TinO2n-1 Nanomaterials for Improving Lithium-Sulfur

Cui, Yi

267

Syngas Oxidation Mechanism  

Science Journals Connector (OSTI)

A comprehensive analysis of synthesis gas (syngas) oxidation kinetics in wide ranges of temperature ... on the basis of the reaction mechanism of syngas ignition and combustion in air. A vast set of experimental ...

A. M. Starik; N. S. Titova; A. S. Sharipov…

2010-09-01T23:59:59.000Z

268

Controlled CO preferential oxidation  

DOE Patents [OSTI]

Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

Meltser, M.A.; Hoch, M.M.

1997-06-10T23:59:59.000Z

269

Modeling of Diesel Oxidation Catalyst  

Science Journals Connector (OSTI)

Modeling of Diesel Oxidation Catalyst ... Optimization of hydrocarbon (HC) oxidation over a diesel oxidation catalyst (DOC) requires consideration of (i) HC gas diffusion into the catalyst layer, (ii) HC gas adsorption and desorption from catalyst sites, and (iii) kinetics of the oxidation reaction. ... Mutagenicity of Diesel Engine Exhaust Is Eliminated in the Gas Phase by an Oxidation Catalyst but Only Slightly Reduced in the Particle Phase ...

Yasushi Tanaka; Takashi Hihara; Makoto Nagata; Naoto Azuma; Akifumi Ueno

2005-09-30T23:59:59.000Z

270

REDUCTION AND SEQUESTRATION OF PERTECHNETATE TO TECHNETIUM DIOXIDE AND PROTECTION FROM RE-OXIDATION  

SciTech Connect (OSTI)

This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-I0S simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mobile +7 state under acidic or oxygenated conditions within the tested period of time (6 weeks). Previous work indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table 1 shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit.

DUNCAN JB; JOHNSON JM; MOORE WP; HAGERTY KJ; RHODES RN; MOORE RC

2012-07-11T23:59:59.000Z

271

Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission  

SciTech Connect (OSTI)

Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Cho, Yong-Hoon, E-mail: yhc@kaist.ac.kr [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)] [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kwon, Soon-Yong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of) [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Jin Kim, Hee; Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Si Dang, Le [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)] [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

2013-11-25T23:59:59.000Z

272

Thermally Oxidized Silicon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

273

Oxidative Tritium Decontamination System  

SciTech Connect (OSTI)

The Princeton Plasma Physics Laboratory, Tritium Systems Group has developed and fabricated an Oxidative Tritium Decontamination System (OTDS), which is designed to reduce tritium surface contamination on various components and items. The system is configured to introduce gaseous ozone into a reaction chamber containing tritiated items that require a reduction in tritium surface contamination. Tritium surface contamination (on components and items in the reaction chamber) is removed by chemically reacting elemental tritium to tritium oxide via oxidation, while purging the reaction chamber effluent to a gas holding tank or negative pressure HVAC system. Implementing specific concentrations of ozone along with catalytic parameters, the system is able to significantly reduce surface tritium contamination on an assortment of expendable and non-expendable items. This paper will present the results of various experimentation involving employment of this system.

Charles A. Gentile; John J. Parker; Gregory L. Guttadora; Lloyd P. Ciebiera

2002-02-11T23:59:59.000Z

274

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

1999-01-01T23:59:59.000Z

275

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

2001-01-01T23:59:59.000Z

276

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-17T23:59:59.000Z

277

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-24T23:59:59.000Z

278

Tetraalklylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

1998-10-06T23:59:59.000Z

279

Tetraalykylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z ›(n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

1998-01-01T23:59:59.000Z

280

A Porphyrin-Stabilized Iridium Oxide Water Oxidation Catalyst  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Porphyrin-Stabilized Iridium Oxide Water Oxidation Catalyst Authors: Sherman, B. D., Pillai, S., Kodis, G., Bergkamp, J., Mallouk, T. E., Gust, D., Moore, T. A., and Moore, A. L....

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide  

E-Print Network [OSTI]

as potential feedstock in solid oxide fuel cells. Petroleum based fuels become scarcer daily, and biodiesel for use in solid oxide fuel cells. This cutting edge area of research continues to be important as energy prove useful for solid oxide fuel cells. METHODS Commercial molybdenum dioxide was used for all tests

Collins, Gary S.

282

Highly oxidized superconductors  

DOE Patents [OSTI]

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

Morris, D.E.

1994-09-20T23:59:59.000Z

283

Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures  

SciTech Connect (OSTI)

Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.

Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.

2010-01-01T23:59:59.000Z

284

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect (OSTI)

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?°C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Högskola AB, Göteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

285

Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells  

SciTech Connect (OSTI)

Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K. [Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF (United Kingdom); Taylor, A. A.; Mendis, B. G.; Bowen, L. [G. J. Russell Microscopy Facility, University of Durham, South Road, Durham DH1 3LE (United Kingdom)

2014-02-03T23:59:59.000Z

286

Broadband light absorption enhancement in polymer photovoltaics using metal nanowall gratings as transparent electrodes  

SciTech Connect (OSTI)

The authors investigate light absorption in organic solar cells in which indium tin oxide (ITO) is replaced by a new metallic architecture (grating) as a transparent electrode. Different from typical metal nanowire gratings, our gratings consist of metal nanowalls with nanoscale footprint and (sub)microscale height [Adv. Mater. 23, 2469 (2011)], thus ensuring high optical transmittance and electrical conductivity. Simulations reveal that a broadband and polarization-insensitive light absorption enhancement is achieved via two mechanisms, when such silver nanowall gratings are employed in P3HT:PCBM based solar cells. Overall absorption enhanced by ~23% compared to a reference cell with ITO electrode.

Ye, Zhuo; Chaudhary, Sumit; Kuang, Ping; Ho, Kai-Ming

2012-05-15T23:59:59.000Z

287

Nanopillar ITO electrodes via argon plasma etching  

Science Journals Connector (OSTI)

The authors demonstrate the formation of vertically aligned indium tin oxide (ITO) nanopillars by exposing planar ITO films to Ar plasma the conditions of which determine the size spacing and aspect ratio of the pillars. Annealing in air and forming gas is used to recover and optimize the optical transmittance and electrical conductivity of the nanopillarfilms. The final product is an ITO film whose superior optical transmittance and strong electrical conductivity combine with its robust columnar morphology and processing scalability to make it suitable for use in highly absorbing organic solar cells.

Jaron G. Van Dijken; Michael J. Brett

2012-01-01T23:59:59.000Z

288

Doping stability and opto-electronic performance of CVD graphene on transparent flexible substrates  

E-Print Network [OSTI]

-dimensional honeycomb of single carbon atoms, has a myriad of impressive, novel optical and electrical properties [1, 2]. As such, it has attracted much attention as a promising material to complement indium tin oxide in large area transparent electrodes for many... transferred to laminate and PET substrates (ATI, Unicam UV2). The transmittance (550 nm) of graphene on PET and on laminate was 10% and 12% lower than the as-received PET and laminate, respectively. The high optical absorption suggests around four layer...

Kang, Moon Hyo; Milne, William I.; Cole, Matthew T.

2014-07-15T23:59:59.000Z

289

Photoresponse of Tb{sup 3+} doped phosphosilicate thin films  

SciTech Connect (OSTI)

Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

1997-09-01T23:59:59.000Z

290

Nanopillar ITO electrodes via argon plasma etching  

SciTech Connect (OSTI)

The authors demonstrate the formation of vertically aligned indium tin oxide (ITO) nanopillars by exposing planar ITO films to Ar plasma, the conditions of which determine the size, spacing, and aspect ratio of the pillars. Annealing in air and forming gas is used to recover and optimize the optical transmittance and electrical conductivity of the nanopillar films. The final product is an ITO film whose superior optical transmittance and strong electrical conductivity combine with its robust columnar morphology and processing scalability to make it suitable for use in highly absorbing organic solar cells.

Van Dijken, Jaron G.; Brett, Michael J. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada) and NRC-National Institute for Nanotechnology, Edmonton, Alberta T6G 2M9 (Canada)

2012-07-15T23:59:59.000Z

291

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2012-09-11T23:59:59.000Z

292

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2014-05-20T23:59:59.000Z

293

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2013-04-16T23:59:59.000Z

294

Ultrafast Graphene Oxide Humidity Sensors  

Science Journals Connector (OSTI)

Ultrafast Graphene Oxide Humidity Sensors ... Graphene oxide can be exploited in humidity and temperature sensors with a number of convenient features such as flexibility, transparency and suitability for large-scale manufacturing. ... Here we show that the two-dimensional nature of graphene oxide and its superpermeability to water combine to enable humidity sensors with unprecedented response speed (?30 ms response and recovery times). ...

Stefano Borini; Richard White; Di Wei; Michael Astley; Samiul Haque; Elisabetta Spigone; Nadine Harris; Jani Kivioja; Tapani Ryhänen

2013-11-09T23:59:59.000Z

295

Doped palladium containing oxidation catalysts  

DOE Patents [OSTI]

A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

Mohajeri, Nahid

2014-02-18T23:59:59.000Z

296

Khi i hc k thut thng tin (Undergraduateds School of IES) http://www.uec.ac.jp/ies/faculty/index.html (Jpns)  

E-Print Network [OSTI]

lng Lng t hc Vt liu hc Cht bán dn - Siêu bán dn Thit b in t - Thit b quang in t - T - Vt liu quang Thông tin quang Vt lý rn Sinh hc - Thn kinh hc H thng sinh hc o lng sinh hc Tên thng qun lý doanh nghip... nh hng ngh nghip: K s h thng, K s qun lý sn xut - cht lng sn phm, Chuyên

Yanai, Keiji

297

Preparation, characterization and applications of novel carbon and nitrogen codoped TiO{sub 2} nanoparticles from annealing TiN under CO atmosphere  

SciTech Connect (OSTI)

Graphical abstract: Carbon and nitrogen codoped TiO{sub 2} nanoparticles were firstly fabricated by calcining TiN powder under CO atmosphere at different temperatures between 400 and 600 °C, both the improved photocatalytic activity for degradation of methylene blue and enhanced photovoltaic performance for dye sensitized solar cells were demonstrated. - Highlights: • CN-codoped TiO{sub 2} nanoparticles were prepared by calcining TiN under CO atmosphere. • More visible light response was confirmed by UV–vis DRS and photocatalytic results. • Enhanced conversion efficiency was observed for the DSSCs from CN-TiO{sub 2} photoanode. • CN-codoping played an important role to improve the photocatalytic performance. - Abstract: Carbon and nitrogen codoped titania (CN-TiO{sub 2}) nanoparticles were fabricated by calcining titanium nitride (TiN) nanoparticles under carbon monoxide (CO) atmosphere at four different temperatures in a range of 400–600 °C. The as-prepared samples were characterized with X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscopy (XPS). Enhanced light absorption in both the UV and visible light region was observed for the resulted CN-TiO{sub 2} nanoparticles in ultraviolet-visible diffuse reflectance spectroscopy (UV–vis DRS). Improved photocatalytic activity toward the degradation of methylene blue by the CN-TiO{sub 2} nanoparticles was demonstrated under UV and visible light, respectively. The highest degradation rate was achieved for CN-TiO{sub 2} nanoparticles (13%) compared to N-TiO{sub 2} (10%) and the commercial P25 (5%) under visible light illumination for 40 min. Furthermore, the improved photocatalytic activity of CN-TiO{sub 2} was also confirmed by the degradation of colorless resorcinol under UV–vis light irradiation. Dye-sensitized solar cells (DSSCs) were fabricated using P25, N-TiO{sub 2} and CN-TiO{sub 2} photoanodes, respectively. The highest conversion efficiency of 3.31% was achieved by the DSSCs based on the CN-TiO{sub 2} photoanodes in comparison with the commercial P25 (1.61%) and N-TiO{sub 2} (2.44%) photoanodes. This work demonstrates that thermal treatment of TiN nanoparticles under CO atmosphere has shown to be a rapid, direct and clean approach to synthesize photocatalysts with enhanced photocatalytic and photovoltaic performance.

Sun, Mingxuan; Song, Peng; Li, Jing; Cui, Xiaoli, E-mail: xiaolicui@fudan.edu.cn

2013-10-15T23:59:59.000Z

298

Graphene and Graphene Oxide: Biofunctionalization and Applications...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Graphene and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Abstract: Graphene...

299

SSL Selections Descriptions v6.xls  

Broader source: Energy.gov (indexed) [DOE]

Zip Code Zip Code Project Description DOE Funding Total Project Value Cambrios Sunnyvale, CA 94085-4520 Solution-Processable Transparent Conductive Hole Injection Electrode for Organic Light-Emitting Diode (OLED) SSL. This project seeks to develop a cost-effective replacement for indium tin oxide for use as an electrode in OLED lighting devices. Indium is both rare and very expensive. $1,199,971 $1,846,110 University of Rochester Rochester, NY 14627-0216 Development and Utilization of Host Materials for White Phosphorescent OLEDs. This project seeks to produce white OLEDs with > 100 lm/W efficiency after light extraction enhancement and > 10,000 hour operating time, by making a new class of emissive materials. $1,239,071 $1,376,746 WhiteOptics, LLC

300

Oxidation resistant alloys, method for producing oxidation resistant alloys  

DOE Patents [OSTI]

A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800.degree. C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800.degree. C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700.degree. C. at a low cost

Dunning, John S. (Corvallis, OR); Alman, David E. (Salem, OR)

2002-11-05T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Oxidation resistant alloys, method for producing oxidation resistant alloys  

DOE Patents [OSTI]

A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

Dunning, John S.; Alman, David E.

2002-11-05T23:59:59.000Z

302

Enhanced Thermal Conductivity Oxide Fuels  

SciTech Connect (OSTI)

the purpose of this project was to investigate the feasibility of increasing the thermal conductivity of oxide fuels by adding small fractions of a high conductivity solid phase.

Alvin Solomon; Shripad Revankar; J. Kevin McCoy

2006-01-17T23:59:59.000Z

303

Anodic oxidation of zircaloy-2  

Science Journals Connector (OSTI)

The anodic polarization of zircaloy-2 in different electrolytic baths has been investigated in order to obtain thick oxide films with properties suitable for wear applications.

A. Conte; A. Borello; A. Cabrini

1976-07-01T23:59:59.000Z

304

Operation of staged membrane oxidation reactor systems  

SciTech Connect (OSTI)

A method of operating a multi-stage ion transport membrane oxidation system. The method comprises providing a multi-stage ion transport membrane oxidation system with at least a first membrane oxidation stage and a second membrane oxidation stage, operating the ion transport membrane oxidation system at operating conditions including a characteristic temperature of the first membrane oxidation stage and a characteristic temperature of the second membrane oxidation stage; and controlling the production capacity and/or the product quality by changing the characteristic temperature of the first membrane oxidation stage and/or changing the characteristic temperature of the second membrane oxidation stage.

Repasky, John Michael

2012-10-16T23:59:59.000Z

305

Catalytic wet oxidation of phenolic wastes  

E-Print Network [OSTI]

Possible catalyst deactivation problems High capital, low operating Supercritical water oxidation (SCWO) Feasible only at high organic concentra- tions High Fast reaction, complete oxidation Severe reaction conditions, canosion problems... of milder reaction conditions and is much less energy intensive. Thus, catalytic wet oxidation would be an alternative to solvent extraction, supercritical water oxidation, homogeneous oxidation, and incineration. It should also be feasible at low...

Thomas, Brook James

1995-01-01T23:59:59.000Z

306

Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications  

E-Print Network [OSTI]

Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.solidoxide.html, Tubular Solid Oxide Fuel Cell Technology,Oxide Films for Solid Oxide Fuel Cell Applications by Jason

Nicholas, Jason.D.

2007-01-01T23:59:59.000Z

307

Metal oxide films on metal  

DOE Patents [OSTI]

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

1995-01-01T23:59:59.000Z

308

Ethylene Oxide for Soil Sterilization  

Science Journals Connector (OSTI)

... , this method may be time-consuming, and in view of the physical properties of ethylene oxide (solubility in water and boiling point 12-5 C.) it was considered ... consists of making up an aqueous solution to supply 2 or 4 c.c. of ethylene oxide in a given amount of water, using pre-chilled glassware and water. The ...

R. E. ROSE; R. W. BAILEY

1952-04-26T23:59:59.000Z

309

Ultra Supercritical Steamside Oxidation  

SciTech Connect (OSTI)

Ultra supercritical (USC) power plants offer the promise of higher efficiencies and lower emissions, which are goals of the U.S. Department of Energy's Advanced Power Systems Initiatives. Most current coal power plants in the U.S. operate at a maximum steam temperature of 538 C. However, new supercritical plants worldwide are being brought into service with steam temperatures of up to 620 C. Current Advanced Power Systems goals include coal generation at 60% efficiency, which require steam temperatures of up to 760 C. This research examines the steamside oxidation of advanced alloys for use in USC systems, with emphasis placed on alloys for high- and intermediate-pressure turbine sections. Initial results of this research are presented.

Holcomb, Gordon R.; Cramer, Stephen D.; Covino, Bernard S., Jr.; Bullard, Sophie J.; Ziomek-Moroz, Malgorzata

2005-01-01T23:59:59.000Z

310

The relationship between structural evolution and electrical percolation of the initial stages of tungsten chemical vapor deposition on polycrystalline TiN  

SciTech Connect (OSTI)

This paper presents experimental results and a geometric model of the evolution of sheet resistance and surface morphology during the transition from nucleation to percolation of tungsten chemical vapor deposition over ultrathin polycrystalline titanium nitride (TiN). We observed two mechanisms of reduction in sheet resistance. At deposition temperatures higher than 310 deg. C, percolation effect is formed at {approx}35% of surface coverage, {theta}, and characterized with a sharp drop in resistance. At temperature below 310 deg. C, a reduction in resistance occurs in two steps. The first step occurs when {theta} = 35% and the second step at {theta} = 85%. We suggest a geometric model in which the electrical percolation pass is modulated by the thickness threshold of the islands at the instant of collision.

Rozenblat, A. [Micron Semiconductors Israel Ltd., Qiryat-Gat 82109 (Israel); Department of Physical Electronics, Electrical Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Haimson, S. [Material Science Program, Tel Aviv University, Tel Aviv 69978 (Israel); Shacham-Diamand, Y. [Department of Physical Electronics, Electrical Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Horvitz, D. [Micron Semiconductors Israel Ltd., Qiryat-Gat 82109 (Israel)

2012-01-16T23:59:59.000Z

311

Nanostructured Solid Oxide Fuel Cell Electrodes  

E-Print Network [OSTI]

post-Doping of Solid Oxide Fuel Cell Cathodes,? P.h.D.and V. I. Birss, in Solid Oxide Fuel Cells (SOFC IX), S. C.Nanostructured Solid Oxide Fuel Cell Electrodes By Tal Zvi

Sholklapper, Tal Zvi

2007-01-01T23:59:59.000Z

312

Detection of oxidation in human serum lipoproteins  

E-Print Network [OSTI]

A method for the oxidation of lipoproteins in vitro was developed using the free radical initiator, 2,2?-azobis-(2-amidinopropane) dihydrochloride (AAPH). Following in vitro oxidation, the susceptibility to oxidation of the serum samples...

Myers, Christine Lee

2006-04-12T23:59:59.000Z

313

New manganese catalyst for light alkane oxidation  

DOE Patents [OSTI]

Aluminophosphates containing manganese in the structural framework are employed for the oxidation of alkanes, for example the vapor phase oxidation of methane to methanol.

Durante, Vincent A. (West Chester, PA); Lyons, James E. (Wallingford, PA); Walker, Darrell W. (Visalia, CA); Marcus, Bonita K. (Radnor, PA)

1994-01-01T23:59:59.000Z

314

Relationship between the residual electric resistance of solid solutions and the rate of their melting in contact with metals  

Science Journals Connector (OSTI)

The rates of melting of tin-, lead-, and indium-based binary solid solutions in contact with low-melting metals (Bi, Sn, In, Pb) have been measured. A linear relationship is established between the rate of con...

A. A. Akhkubekov; N. V. Dalakova; O. L. Enaldieva…

2006-04-01T23:59:59.000Z

315

Structure, adhesion, and stability of metal/oxide and oxide/oxide interfaces  

SciTech Connect (OSTI)

Studies of structural, electronic, and chemical properties of metal/oxide and oxide/oxide interfaces were performed on well-defined interfaces that created by depositing ultra-thin potassium and aluminum films and their oxides onto single crystal TiO[sub 2] and NiO surfaces. Work focused on determining the structure, growth mechanisms, and morphologies of metal and oxide films as they are deposited an single crystal oxide surfaces using RHEED and atomic force microscopy probing electronic structure, bonding and chemical interactions at the interfaces using x-ray and uv photoelectron spectroscopies (XPS, UPS) and Auger electron spectroscopy (AES), and understanding factors affecting stability and reactivity of the interface regions including the role of defects and impurities. Results indicate that kinetic effects have an important influence on interface structure and composition, and they also show that defects in the oxide substrate induce new electronic states at the interface which play a major role in cation-anion bonding and interface interactions. The results establish a link between electronic and chemical bonding properties and the interface structure and morphology, which is required to successfully manipulate the interfacial properties of advanced ceramic materials.

Lad, R.J.

1992-11-01T23:59:59.000Z

316

Development of a cost effective surface-patterned transparent conductive coating as top-contact of light emitting diodes  

SciTech Connect (OSTI)

Sol-gel process has been used to form indium zinc oxide films using an optimized combination of zinc to indium concentration in the precursor solutions. Different structures, like one (1D) and two-dimensional (2D) gratings and diffractive optical elements (DOEs) in the form of Fresnel lens are fabricated on the film surface of proposed top metal contact of LED by imprint soft lithography technique. These structures can enhance the LED's light extraction efficiency (LEE) or can shape the output beam pattern, respectively. Several characterizations are done to analyze the material and structural properties of the films. The presence of 1D and 2D gratings as well as DOEs is confirmed from field emission scanning electron and atomic force microscopes analyses. Although, X-ray diffraction shows amorphous nature of the film, but transmission electron microscopy study shows that it is nano crystalline in nature having fine particles (?8?nm) of hexagonal ZnO. Shrinkage behaviour of gratings as a function of curing temperature is explained by Fourier transform infra-red spectra and thermo gravimetric-differential thermal analysis. The visible transmission and sheet resistance of the sample are found comparable to tin doped indium oxide (ITO). Therefore, the film can compete as low cost substitute of ITO as top metal contact of LEDs.

Haldar, Arpita [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India); Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bera, Susanta; Jana, Sunirmal, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bhattacharya, Kallol; Chakraborty, Rajib, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India)

2014-05-21T23:59:59.000Z

317

STATEMENT OF CONSIDERATIONS REQUEST BY ARKEMA FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN  

Broader source: Energy.gov (indexed) [DOE]

ARKEMA FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN ARKEMA FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE CONTRACT NO. DE~FC26-08NT01576: W(A}..09-028, CH-1493 The Petitioner, Arkema, Inc., was awarded this cooperative agreement for the performance of work entitled, "Application of Developed Atmospheriq Pressure Chemical Vapor Deposition (APCVD) Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting." According to its response to question 2, Arkema will develop new undercoaVTCO (transparent conductive oxide) constructions as a low-cost alternative to the current ITO (indium tin oxide) technology used for OLED lighting that will have equivalent or better performance. This waiver is only for inventions of Arkema made under the cooperative agreement.

318

Effect of the thickness and hydrogen treatment on the properties of Ga-doped ZnO transparent conductive films  

Science Journals Connector (OSTI)

Combined effects of the thickness and hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO (GZO) films were investigated as a potential substitute for indium tin oxide transparent conductive oxide. In the as-deposited films, microstructural evolution initially improved the crystallinity up to the thickness of 160 nm accompanying enhanced electrical and optical properties, but further thickness increase resulted in the deterioration of these properties attributable to the development of ZnGa2O4 and Ga2O3 phases originating from the excessive amount of the Ga dopant. Post-annealing treatment of the GZO films in a hydrogen atmosphere improved the electrical and optical properties substantially through possible reduction of the oxide phases and passivation of the surfaces and grain boundaries. In this case, electrical and optical properties remained almost similar for the thickness above 160 nm indicating that there exists a certain optimal film thickness.

Min-Jung Lee; Jinhyong Lim; Jungsik Bang; Woong Lee; Jae-Min Myoung

2008-01-01T23:59:59.000Z

319

Development of a Zirconia-Based Electrochemical Sensor for the Detection of Hydrogen in Air  

SciTech Connect (OSTI)

Mixed potential sensors utilizing a machined, dense indium-tin oxide working electrode (In{sub 2}O{sub 3}:SnO{sub 2}; 90%:10%), a Pt wire counter electrode, and porous YSZ electrolyte were prepared using ceramic tape casting methods. The response of these devices to hydrogen concentrations up to 2% in air were studied from 600 to 740 C. The sensor response exhibited a reversible behavior and a fast response time with sensitivity increasing with decreasing temperature. GC analysis confirmed significant heterogeneous oxidation of the H{sub 2} on heated furnace tube wall surfaces thus driving sensor response at H{sub 2} concentrations greater than a few hundred ppm. The transition to a cold wall, miniature platform heater significantly reduced hydrogen oxidation although some flow rate dependence remains.

Brosha, E; Mukundan, R; Lujan, R; Garzon, F; Woo, L; Worsley, M; Glass, B

2008-07-16T23:59:59.000Z

320

Single crystal oxide and oxide/oxide eutectic fibres for high temperature composites  

Science Journals Connector (OSTI)

The utilisation of fibre-reinforced metal, intermetallic and ceramic matrix composites (CMCs) in gas turbine engines offers the potential of improved fuel efficiency, higher operating temperature and greater thrust to weight ratio. The development of ceramic fibres with high strength, excellent strength retention at elevated temperatures and good creep resistance is essential to the successful implementation of composites in various high temperature components. Several single crystal oxide and oxide/oxide eutectic fibres have been developed to meet the demanding performance requirements. Recent progress made on developing these fibers will be discussed.

J.-M. Yang

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

The catalytic oxidation of propane  

E-Print Network [OSTI]

THE CATALYTIC OXIDATION OP PROPANE A Thesis By Charles Frederick Sandersont * * June 1949 Approval as to style and content recommended: Head of the Department of Chemical Engineering THE CATALYTICi OXIDATTON OF PROPANE A Thesis By Charles... Frederick ;Sandersonit * June 1949 THE CATALYTIC OXIDATION OP PROPANE A Thesis Submitted to the Faculty of the Agricultural and Mechanical College of Texas in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Major...

Sanderson, Charles Frederick

2013-10-04T23:59:59.000Z

322

Effect of fluoride, chloride, bromide, and thiocynate on potentiometric titrations of iron(II)-tin(II) mixtures with cerium(IV)  

SciTech Connect (OSTI)

A two-step curve is expected in the potentiometric titration of Fe(II)-Sn(II) mixtures with Ce(IV) in H/sub 2/SO/sub 4/. Each end point should indicate the respective oxidation of Sn(II) and Fe(II). However, experimentally only one end point was found; it corresponded to the total oxidation of Sn(II) and Fe(II). When this oxidation-reduction reaction was carried out in the presence of Cl/sup -/, the theoretical behavior was observed. The present study was done to ascertain if monovalent anions other than Cl/sup -/ have a similar effect on this oxidation-reduction system. The monovalent species F/sup -/, Br/sup -/, and SCN/sup -/ were selected for this study, and the results indicate that each affects the rate of reaction relative to the ease of oxidation of the individual ions.

Kwok, Y.M.

1980-07-31T23:59:59.000Z

323

Crystal structure and chemistry of a complex indium phosphate framework material, (ethylenediammonium)In{sub 3}P{sub 3}O{sub 12}(OH){sub 2}  

SciTech Connect (OSTI)

The chemistry and structure of a novel indium phosphate material (RIPS-4), (H{sub 3}NCH{sub 2}CH{sub 2}NH{sub 3})In{sub 3}-P{sub 3}O{sub 12}(OH){sub 2}, are described. RIPS-4 was synthesized using ethylene diamine as a structure-directing organic agent. The X-ray crystal structure was determined from a 12 Multiplication-Sign 12 Multiplication-Sign 42 {mu}m{sup 3} crystal in space group C2/m with a=18.662(4) A, b=6.600(2) A, c=12.573(3) A and {beta}=120.92(1) Degree-Sign . The structure consists of a complex edge- and vertex-shared open framework of InO{sub 6} octahedra and PO{sub 4} tetrahedra enclosing cavities occupied by ethylenediamonium ions. One set of octahedra share opposing edges to form chains along the b-axis matching the structural unit in rutile (TiO{sub 2}). This rutile edge-shared chain has its projecting oxygen atoms shared with the vertexes of either a PO{sub 4} tetrahedron or a second type of InO{sub 6} octahedron. The O atoms are 2-connected, each to one In and one P, except for two protonated O atoms (hydroxyl groups) that connect to two and three In atoms, giving three- and four-coordinate O atoms, respectively. - Graphical abstract: The unique topology contains an unusual 4-connected oxygen atom (O{sub 1}) in a complex edge- and vertex-shared open framework of InO{sub 6} octahedra (blue) and PO{sub 4} tetrahedra (yellow) that encloses cavities occupied by ethylenediammonium ions. Highlights: Black-Right-Pointing-Pointer The structure has a unique open-framework topology. Black-Right-Pointing-Pointer The framework contains an unusual 4-connected oxygen atom. Black-Right-Pointing-Pointer Hydrogen bonds hold the ethylenediammonium ions in the cavities.

Broach, Robert W., E-mail: robert.broach@uop.com [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); Bedard, Robert L. [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States)] [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); King, Lisa M., E-mail: lisa.king@uop.com [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); Pluth, Joseph J., E-mail: pluth@cars.uchicago.edu [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States); The University of Chicago, The Materials Research Science and Engineering Center, Chicago, IL 60637 (United States); Smith, Joseph V. [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States)] [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States); Kirchner, Richard M., E-mail: richard.kirchner@manhattan.edu [Manhattan College, Chemistry Department, Bronx, NY 10471 (United States)

2012-12-15T23:59:59.000Z

324

Developing TiAIN Coatings for Intermediate Temperature-Solid Oxide Fuel Cell Interconnect Applications  

SciTech Connect (OSTI)

TiN-type coatings have potential to be used as SOFC interconnect coatings SOFC because of their low resistance and high temperature stability. In this research, various (Ti,Al)N coatings were deposited on stainless steels by filtered-arc method. ASR and XRD tests were conducted on these coatings, and SEM/EDAX analysis were conducted after ASR and XRD tests. SEM/EDAX analyses show that (Ti,Al)N remains stable at temperature up to 700°C. It is also indicated that Al has beneficial effect on the stability of TiN type coatings. At 900°C, (Ti-30Al)N is fully oxidized and some of (Ti-50Al)N coating still remains as nitride. The analyses on cross-sectional samples show that these coatings are effective barrier to the Cr migration. In summary, (Ti.Al)N coatings are good candidates for the SOFC interconnect applications at 700°C. The future directions of this research are to improve the stability of these coatings by alloy-doping and to develop multi-layer coatings.

Liu, X. (West Virginia University); Johnson, C.D.; Li, C. (West Virginia University); Xu, J. (West Virginia University); Cross, C.

2007-02-01T23:59:59.000Z

325

Rapid thermal oxidation of silicon in mixtures of oxygen and nitrous oxide  

SciTech Connect (OSTI)

Oxidation in nitrous oxide by conventional hot wall furnace processing and by rapid thermal oxidation (RTO) has been a subject of much interest in recent years. RTO is a fundamentally different process than furnace oxidation, however, and the full effects of this type of processing on the oxidation kinetics are not well understood. Oxidation of silicon by RTO at a variety of pressures, temperatures, and oxidation gas mixtures has been studied. Although at lower temperatures (< 850 C) the atmospheric pressure oxidation rate in nitrous oxide is very close to that in oxygen, at higher temperatures the oxidation rate in nitrous oxide is much lower than that in oxygen. At lower pressures in a RTO process, the oxidation rate in nitrous oxide is higher than that in oxygen. The effect of the nitrogen incorporated in the oxide acting as a diffusion barrier has been proposed as the mechanism of temperature dependence for atmospheric pressure oxidation in nitrous oxide. This does not explain the effects seen at lower pressure,s however, The authors propose that some of the intermediate species produced in the decomposition of nitrous oxide into molecular nitrogen, molecular oxygen, and nitric oxide play a role in the initial stages of oxidation by RTO in nitrous oxide.

Grant, J.M.; Karim, Z. [Sharp Microelectronics Technology, Inc., Camas, WA (United States)

1996-12-01T23:59:59.000Z

326

In situ reduction and oxidation of nickel from solid oxide fuel cells in a Titan ETEM  

E-Print Network [OSTI]

In situ reduction and oxidation of nickel from solid oxide fuel cells in a Titan ETEM A. Faes1. C. Singhal, K. Kendall, High Temperature Solid Oxide Fuel Cell - Fundamentals, Design, Denmark antonin.faes@epfl.ch Keywords: In situ ETEM, nickel oxide, reduction, RedOx, SOFC Solid Oxide Fuel

Dunin-Borkowski, Rafal E.

327

Transparent conducting oxides and production thereof  

SciTech Connect (OSTI)

Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

2014-06-10T23:59:59.000Z

328

Transparent conducting oxides and production thereof  

SciTech Connect (OSTI)

Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Gessert, Timothy A; Yoshida, Yuki; Coutts, Timothy J

2014-05-27T23:59:59.000Z

329

Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors  

SciTech Connect (OSTI)

Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m x n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm{sup 2} V{sup -1} s{sup -1}, low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 x 5 electrode array connected to a 2 x 5 IGZO thin film transistor array with the semiconductor channel width of 50 {mu}m and mobility of 6.3 cm{sup 2} V{sup -1} s{sup -1}. Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

Noh, Joo Hyon [University of Tennessee, Knoxville (UTK); Noh, Jiyong [University of Tennessee, Knoxville (UTK); Kreit, Eric [University of Cincinnati; Heikenfeld, Jason [University of Cincinnati; Rack, Philip D [ORNL

2012-01-01T23:59:59.000Z

330

Solid oxide electrochemical reactor science.  

SciTech Connect (OSTI)

Solid-oxide electrochemical cells are an exciting new technology. Development of solid-oxide cells (SOCs) has advanced considerable in recent years and continues to progress rapidly. This thesis studies several aspects of SOCs and contributes useful information to their continued development. This LDRD involved a collaboration between Sandia and the Colorado School of Mines (CSM) ins solid-oxide electrochemical reactors targeted at solid oxide electrolyzer cells (SOEC), which are the reverse of solid-oxide fuel cells (SOFC). SOECs complement Sandia's efforts in thermochemical production of alternative fuels. An SOEC technology would co-electrolyze carbon dioxide (CO{sub 2}) with steam at temperatures around 800 C to form synthesis gas (H{sub 2} and CO), which forms the building blocks for a petrochemical substitutes that can be used to power vehicles or in distributed energy platforms. The effort described here concentrates on research concerning catalytic chemistry, charge-transfer chemistry, and optimal cell-architecture. technical scope included computational modeling, materials development, and experimental evaluation. The project engaged the Colorado Fuel Cell Center at CSM through the support of a graduate student (Connor Moyer) at CSM and his advisors (Profs. Robert Kee and Neal Sullivan) in collaboration with Sandia.

Sullivan, Neal P. (Colorado School of Mines, Golden, CO); Stechel, Ellen Beth; Moyer, Connor J. (Colorado School of Mines, Golden, CO); Ambrosini, Andrea; Key, Robert J. (Colorado School of Mines, Golden, CO)

2010-09-01T23:59:59.000Z

331

Oxidants, Antioxidants and Cell Signaling  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Oxidants, Antioxidants and Cell Signaling Oxidants, Antioxidants and Cell Signaling Speaker(s): Chandan K. Sen Date: February 17, 1998 - 12:00pm Location: 90-3148 Seminar Host/Point of Contact: Richard Sextro Reactive oxygen species represent a common mediator of environmental stress such as during physical exercise, ozone exposure, UV radiation and xenobiotic (pollutant) metabolism. Antioxidant defense systems protect against the ravages of such reactive species. In contrast to the conventional idea that reactive oxygen is mostly a trigger for oxidative damage of biological structures, now we know that low physiologically relevant concentration of reactive oxygen species can regulate a variety of key molecular mechanisms that may be linked with important processes such as immune response, cell-cell adhesion, cell proliferation, inflammation,

332

Graphite Oxidation Thermodynamics/Reactions  

SciTech Connect (OSTI)

The vulnerability of graphite-matrix spent nuclear fuel to oxidation by the ambient atmosphere if the fuel canister is breached was evaluated. Thermochemical and kinetic data over the anticipated range of storage temperatures (200 to 400 C) were used to calculate the times required for a total carbon mass loss of 1 mgcm-2 from a fuel specimen. At 200 C, the time required to produce even this small loss is large, 900,000 yr. However, at 400 C the time required is only 1.9 yr. The rate of oxidation at 200 C is negligible, and the rate even at 400 C is so small as to be of no practical consequence. Therefore, oxidation of the spent nuclear fuel upon a loss of canister integrity is not anticipated to be a concern based upon the results of this study.

Propp, W.A.

1998-09-01T23:59:59.000Z

333

Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: In situ tin doping by chemical bath deposition technique  

Science Journals Connector (OSTI)

Abstract We report on surface morphology changes of in situ tin (Sn) doped cadmium sulphide (CdS) thin film nanostructures prepared on a glass substrate using the chemical bath deposition (CBD) technique. Sn-doping in the presence of triethanolammine (TEOA) as complexing agent resulted in the formation of nanocauliflower like structure of CdS thin film. X-ray diffraction (XRD) results indicated that Sn-doped CdS thin films show a hexagonal structure with a preferential orientation growth along the c-axis (0 0 2). The Sn4+ doping markedly influenced on the evolution of the CdS nanostructures, resulting in the formation of nanocracks due to the substitution of Cd2+ ions by larger-than-host Sn4+ ions as well as a drastic increase in electrical conductivity. An improved optical transmittance property was also achieved by the Sn-doping with no considerable change in the energy band gap. Moreover, a large improvement in both electrical conductivity and photosensitivity observed in the Sn-doped CdS thin films suggests that Sn-doping is highly effective for applications as window/buffer layers in future solar cell applications. Structural evolution of cauliflower like nanostructures are also discussed in this paper.

K.C. Wilson; E. Manikandan; M. Basheer Ahamed; B.W. Mwakikunga

2014-01-01T23:59:59.000Z

334

Pressure-induced phase transformations in alkali-metal hydrides calculated using an improved linear-muffin-tin-orbital–atomic-sphere-approximation energy scheme  

Science Journals Connector (OSTI)

A scheme for the calculation of total energies from first principles is described which is intermediate between the popular linear muffin-tin-orbital method in the atomic-sphere approximation (LMTO-ASA) and an exact full-potential treatment. The local-density total energy is evaluated accurately for the output charge density from the ASA potential. This method is applied to the study of static structural properties and the pressure-induced phase transformation from B1 (NaCl-structure) to B2 (CsCl-structure) phases for the partially ionic alkaki-metal hydrides NaH and KH and the alkali halide NaCl. Good agreement with experimental transition pressures and volumes is obtained. The series NaH, KH, and NaCl shows the observed strong cation and weak anion dependence. Charge densities and band structures are given at zero and high pressure. Calculated energy-volume curves for LiH show no transition up to 1 Mbar, in agreement with experimental data.

C. O. Rodriguez and M. Methfessel

1992-01-01T23:59:59.000Z

335

Hydrothermal synthesis of [C{sub 6}H{sub 16}N{sub 2}][In{sub 2}Se{sub 3}(Se{sub 2})]: A new one-dimensional indium selenide  

SciTech Connect (OSTI)

A new organically templated indium selenide, [C{sub 6}H{sub 16}N{sub 2}][In{sub 2}Se{sub 3}(Se{sub 2})], has been prepared hydrothermally from the reaction of indium, selenium and trans-1,4-diaminocyclohexane in water at 170 deg. C. This material was characterised by single-crystal and powder X-ray diffraction, thermogravimetric analysis, UV-vis diffuse reflectance spectroscopy, FT-IR and elemental analysis. The compound crystallises in the monoclinic space group C2/c (a=12.0221(16) A, b=11.2498(15) A, c=12.8470(17) A, {beta}=110.514(6){sup o}). The crystal structure of [C{sub 6}H{sub 16}N{sub 2}][In{sub 2}Se{sub 3}(Se{sub 2})] contains anionic chains of stoichiometry [In{sub 2}Se{sub 3}(Se{sub 2})]{sup 2-}, which are aligned parallel to the [1 0 1] direction, and separated by diprotonated trans-1,4-diaminocyclohexane cations. The [In{sub 2}Se{sub 3}(Se{sub 2})]{sup 2-} chains, which consist of alternating four-membered [In{sub 2}Se{sub 2}] and five-membered [In{sub 2}Se{sub 3}] rings, contain perselenide (Se{sub 2}){sup 2-} units. UV-vis diffuse reflectance spectroscopy indicates that [C{sub 6}H{sub 16}N{sub 2}][In{sub 2}Se{sub 3}(Se{sub 2})] has a band gap of 2.23(1) eV. - Graphical abstract: [C{sub 6}H{sub 16}N{sub 2}][In{sub 2}Se{sub 3}(Se{sub 2})], prepared under hydrothermal conditions, contains one-dimensional chains of stoichiometry [In{sub 2}Se{sub 3}(Se{sub 2})]{sup 2-}, in which four-membered [In{sub 2}Se{sub 2}] and five-membered [In{sub 2}Se{sub 3}] rings alternate. Highlights: > New one-dimensional indium selenide prepared under hydrothermal conditions. > The [In{sub 2}Se{sub 3}(Se{sub 2})]{sup 2-} chains are a new structural motif for Group 13 chalcogenides. > Unusual presence of (Se{sub 2}){sup 2-} moieties. > Optical band gap of 2.23(1) eV.

Ewing, Sarah J.; Powell, Anthony V. [Heriot-Watt University, Department of Chemistry, Edinburgh EH14 4AS (United Kingdom); Vaqueiro, Paz, E-mail: chepv@hw.ac.uk [Heriot-Watt University, Department of Chemistry, Edinburgh EH14 4AS (United Kingdom)

2011-07-15T23:59:59.000Z

336

Aromatic-radical oxidation chemistry  

SciTech Connect (OSTI)

The research effort has focussed on discovering an explanation for the anomalously high CO{sub 2} concentrations observed early in the reaction sequence of the oxidation of cyclopentadiene. To explain this observation, a number of plausible mechanisms have been developed which now await experimental verification. One experimental technique for verifying mechanisms is to probe the reacting system by perturbing the radical concentrations. Two forms of chemical perturbation of the oxidation of cyclopentadiene were begun during this past year--the addition of NO{sub 2} and CO to the reacting mixture.

Glassman, I.; Brezinsky, K. [Princeton Univ., NJ (United States)

1993-12-01T23:59:59.000Z

337

Solid oxide fuel cell generator  

DOE Patents [OSTI]

A solid oxide fuel cell generator has a pair of spaced apart tubesheets in a housing. At least two intermediate barrier walls are between the tubesheets and define a generator chamber between two intermediate buffer chambers. An array of fuel cells have tubes with open ends engaging the tubesheets. Tubular, axially elongated electrochemical cells are supported on the tubes in the generator chamber. Fuel gas and oxidant gas are preheated in the intermediate chambers by the gases flowing on the other side of the tubes. Gas leakage around the tubes through the tubesheets is permitted. The buffer chambers reentrain the leaked fuel gas for reintroduction to the generator chamber.

Draper, Robert (Churchill Boro, PA); George, Raymond A. (Pittsburgh, PA); Shockling, Larry A. (Plum Borough, PA)

1993-01-01T23:59:59.000Z

338

Realization of indium liquidus point  

E-Print Network [OSTI]

and Glass Rod, and Thermi. stor Reading vs Time (yZ) 43 ThRLN 2 PRT OUTPUT VS. HEhTlNG VOLThGR Voltage on hluainua PRT Output (aV) 22 g 28 g 28 N 29 N 32 M 34 N 13. 600 14. 391 14 ~ 395 14. 393 14. 414 3. Final Results The cell... FOR CONSTANT CURRENT SUPPLT TABLE B-I DATA fOR CONSTANT CURRENT WITHIN HOURS (4/28/83) Tias (hr ~ ( aiu ) Output Voltsgs (aV) 35. 02507 35. 02505 35. 02496 35. 02498 TABLE B-II DATA FOR CONSTANT CURRENT WITHIN HOURS (6/22/83) Tias (hr. : ain. ) Output...

Feng, En-Ling

2012-06-07T23:59:59.000Z

339

Ultrafast Infrared Heating Laser Pulse-Induced Micellization Kinetics of Poly(ethylene oxide)-Poly(propylene oxide)-Poly(ethylene oxide) in  

E-Print Network [OSTI]

Ultrafast Infrared Heating Laser Pulse-Induced Micellization Kinetics of Poly(ethylene oxide)-Poly(propylene oxide)-Poly(ethylene oxide) in Water Xiaodong Ye, Yijie Lu, Shilin Liu,*, Guangzhao Zhang, and Chi Wu-induced micellization of poly(ethylene oxide)-b-poly(propylene oxide)-b-poly(ethylene oxide) (Pluronic PE10300) triblock

Liu, Shilin

340

Influence of Ionic Surfactants on the Aggregation of Poly(Ethylene Oxide)-Poly(Propylene Oxide)-Poly(Ethylene Oxide) Block Copolymers Studied by Differential Scanning and  

E-Print Network [OSTI]

Influence of Ionic Surfactants on the Aggregation of Poly(Ethylene Oxide)-Poly(Propylene Oxide)-Poly(Ethylene copolymers of poly(ethylene oxide) and poly(propylene oxide), EOnPOmEOn, and the ionic surfactants sodium the aggregates of all three polymers. Introduction Water-soluble poly(ethylene oxide)-poly(propylene oxide)- poly(ethylene

Loh, Watson

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Using CrAIN Multilayer Coatings to Improve Oxidation Resistance...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Coatings to Improve Oxidation Resistance of Steel Interconnects for Solid Oxide Fuel Cell Stacks. Using CrAIN Multilayer Coatings to Improve Oxidation Resistance of Steel...

342

Computational Modeling of Graphene Oxide Exfoliation and Lithium Storage Characteristics.  

E-Print Network [OSTI]

??Graphene oxide is a two dimensional material obtained by adsorption of oxygen or oxygen-containing groups on graphene. Stacked layers of graphene oxide constitute graphite oxide.… (more)

Mortezaee, Reza

2013-01-01T23:59:59.000Z

343

Solid oxide steam electrolysis for high temperature hydrogen production .  

E-Print Network [OSTI]

??This study has focused on solid oxide electrolyser cells for high temperature steam electrolysis. Solid oxide electrolysis is the reverse operation of solid oxide fuel… (more)

Eccleston, Kelcey L.

2007-01-01T23:59:59.000Z

344

Structure, adhesion, and stability of metal/oxide and oxide/oxide interfaces  

SciTech Connect (OSTI)

During the past six months, we have begun our studies of the fundamental properties of metal/oxide and oxide/oxide heterogeneous interfaces which are being prepared by epitaxial growth of ultra-thin-films on single crystal TiO{sub 2} and NiO surfaces. A new ultra-high vacuum film growth chamber was assembled and coupled to an existing surface analysis chamber; a sample transfer system, metal deposition sources, and a RHEED systems with microchannel plate detection were constructed and implemented. Atomic Force Microscopy was used to characterize and refine the preparation procedures for the single crystal surfaces. The electronic structure of stoichiometric, oxygen-deficient, and potassium-covered TiO{sub 2} (110) surfaces was investigated. Preliminary results on the Al/TiO{sub 2} (110) system have been obtained. Two graduate students have begun thesis research on the project. 6 figs.

Lad, R.J.

1991-01-01T23:59:59.000Z

345

Electrochromic window with high reflectivity modulation  

DOE Patents [OSTI]

A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

Goldner, Ronald B. (Lexington, MA); Gerouki, Alexandra (Medford, MA); Liu, Te-Yang (Arlington, MA); Goldner, Mark A. (Cambridge, MA); Haas, Terry E. (Southborough, MA)

2000-01-01T23:59:59.000Z

346

Perovskite catalysts for oxidative coupling  

DOE Patents [OSTI]

Perovskites of the structure A.sub.2 B.sub.2 C.sub.3 O.sub.10 are useful as catalysts for the oxidative coupling of lower alkane to heavier hydrocarbons. A is alkali metal; B is lanthanide or lanthanum, cerium, neodymium, samarium, praseodymium, gadolinium or dysprosium; and C is titanium.

Campbell, Kenneth D. (Charleston, WV)

1991-01-01T23:59:59.000Z

347

Perovskite catalysts for oxidative coupling  

DOE Patents [OSTI]

Perovskites of the structure A[sub 2]B[sub 2]C[sub 3]O[sub 10] are useful as catalysts for the oxidative coupling of lower alkane to heavier hydrocarbons. A is alkali metal; B is lanthanide or lanthanum, cerium, neodymium, samarium, praseodymium, gadolinium or dysprosium; and C is titanium.

Campbell, K.D.

1991-06-25T23:59:59.000Z

348

Solid oxide fuel cell generator  

DOE Patents [OSTI]

A solid oxide fuel cell generator has a plenum containing at least two rows of spaced apart, annular, axially elongated fuel cells. An electrical conductor extending between adjacent rows of fuel cells connects the fuel cells of one row in parallel with each other and in series with the fuel cells of the adjacent row. 5 figures.

Di Croce, A.M.; Draper, R.

1993-11-02T23:59:59.000Z

349

Oxidation kinetics of aluminum diboride  

SciTech Connect (OSTI)

The oxidation characteristics of aluminum diboride (AlB{sub 2}) and a physical mixture of its constituent elements (Al+2B) were studied in dry air and pure oxygen using thermal gravimetric analysis to obtain non-mechanistic kinetic parameters. Heating in air at a constant linear heating rate of 10 °C/min showed a marked difference between Al+2B and AlB{sub 2} in the onset of oxidation and final conversion fraction, with AlB{sub 2} beginning to oxidize at higher temperatures but reaching nearly complete conversion by 1500 °C. Kinetic parameters were obtained in both air and oxygen using a model-free isothermal method at temperatures between 500 and 1000 °C. Activation energies were found to decrease, in general, with increasing conversion for AlB{sub 2} and Al+2B in both air and oxygen. AlB{sub 2} exhibited O{sub 2}-pressure-independent oxidation behavior at low conversions, while the activation energies of Al+2B were higher in O{sub 2} than in air. Differences in the composition and morphology between oxidized Al+2B and AlB{sub 2} suggested that Al{sub 2}O{sub 3}–B{sub 2}O{sub 3} interactions slowed Al+2B oxidation by converting Al{sub 2}O{sub 3} on aluminum particles into a Al{sub 4}B{sub 2}O{sub 9} shell, while the same Al{sub 4}B{sub 2}O{sub 9} developed a needle-like morphology in AlB{sub 2} that reduced oxygen diffusion distances and increased conversion. The model-free kinetic analysis was critical for interpreting the complex, multistep oxidation behavior for which a single mechanism could not be assigned. At low temperatures, moisture increased the oxidation rate of Al+2B and AlB{sub 2}, but both appear to be resistant to oxidation in cool, dry environments. - Graphical abstract: Isothermal kinetic data for AlB{sub 2} in air, showing a constantly decreasing activation energy with increasing conversion. Model-free analysis allowed for the calculation of global kinetic parameters despite many simultaneous mechanisms occurring concurrently. (a) Time–temperature plots, (b) conversion as a function of time, (c) Arrhenius plots used to calculate activation energies, and (d) activation energy as a function of conversion. Display Omitted - Highlights: • First reported kinetic parameters for AlB{sub 2} and Al+2B oxidation in air and O{sub 2}. • Possible mechanism of enhanced boron combustion presented. • Moisture sensitivity shown to be problematic for AlB{sub 2}, less for Al+2B.

Whittaker, Michael L., E-mail: michaelwhittaker2016@u.northwestern.edu [Department of Materials Science and Engineering, University of Utah, 122S. Central Campus Drive, Salt Lake City, UT 84112 (United States); Sohn, H.Y. [Department of Metallurgical Engineering, University of Utah, 135S 1460 E, Rm 00412, Salt Lake City, UT 84112 (United States); Cutler, Raymond A. [Ceramatec, Inc., 2425S. 900W., Salt Lake City, UT 84119 (United States)

2013-11-15T23:59:59.000Z

350

Role of Nitrous Oxide in Ambulatory Anaesthesia  

Science Journals Connector (OSTI)

As the oldest anaesthetic still in routine use, the continued role of nitrous oxide is frequently questioned. There are a few well-defined situations in which nitrous oxide is contraindicated or undesirable; i...

Sarah Billingham; Ian Smith

2014-12-01T23:59:59.000Z

351

Complex oxides useful for thermoelectric energy conversion  

DOE Patents [OSTI]

The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.

Majumdar, Arunava (Orinda, CA); Ramesh, Ramamoorthy (Moraga, CA); Yu, Choongho (College Station, TX); Scullin, Matthew L. (Berkeley, CA); Huijben, Mark (Enschede, NL)

2012-07-17T23:59:59.000Z

352

Rare Iron Oxide in Ancient Chinese Pottery  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Rare Iron Oxide in Ancient Chinese Pottery Rare Iron Oxide in Ancient Chinese Pottery Print Friday, 26 September 2014 14:37 Jian ware (or Tenmoku) ceramic bowls, famous for their...

353

NANO - "Green" metal oxides ... | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NANO - "Green" metal oxides ... Water and nano-sized particles isolated from trees, plants and algae are the ingredients of a new recipe for low-cost metal oxides that are widely...

354

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, Barbara K. (Charleston, WV)

1991-01-01T23:59:59.000Z

355

High quality oxide films on substrates  

DOE Patents [OSTI]

A method is described for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material. 4 figures.

Ruckman, M.W.; Strongin, M.; Gao, Y.L.

1994-02-01T23:59:59.000Z

356

News Item  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Making Smart Windows Even Smarter Making Smart Windows Even Smarter Nanocrystals of indium tin oxide (shown here in blue) embedded in a glassy matrix of niobium oxide (green) form a composite material that can switch between NIR-transmitting and NIR-blocking states with a small jolt of electricity. A synergistic interaction in the region where glassy matrix meets nanocrystal increases the potency of the electrochromic effect. Scientific Achievement Researchers have created a thin coating of nanocrystals embedded in glass that can dynamically modify sunlight as it passes through a window. Significance and Impact Unlike existing technologies, the coating provides selective control over visible light and heat-producing near-infrared (NIR) light, so windows can maximize both energy savings and occupant comfort in a wide range of

357

Order on disorder: Copper phthalocyanine thin films on technical substrates  

SciTech Connect (OSTI)

We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

2001-07-01T23:59:59.000Z

358

Pioneer Materials Inc PMI | Open Energy Information  

Open Energy Info (EERE)

Inc PMI Inc PMI Jump to: navigation, search Name Pioneer Materials Inc (PMI) Place Torrance, California Zip 90505 Product US-based manufacturer of non-silicon feedstock material for thin-film PV products such as zinc-oxide and indium-tin-oxide. Coordinates 40.417285°, -79.223959° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.417285,"lon":-79.223959,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

359

Oxidative Transformation of Triclosan and Chlorophene by  

E-Print Network [OSTI]

Oxidative Transformation of Triclosan and Chlorophene by Manganese Oxides H U I C H U N Z H A N G of Technology, Atlanta, Georgia 30332 The antibacterial agents triclosan (5-chloro-2-(2,4- dichlorophenoxy(-MnO2 andMnOOH)yielding MnII ions. Both the initial reaction rate and adsorption of triclosan to oxide

Huang, Ching-Hua

360

Nitrous oxide emissions from wastewater treatment processes  

Science Journals Connector (OSTI)

...specific ammonia oxidation rate. Symbols represent...Research Council (ARC) for funding this...correlated to its ammonia oxidation rate. 51 Arp, D...1146/annurev.micro.61.080706.093449...1146/annurev.micro.61.080706.093449...2004 Anaerobic oxidation of inorganic nitrogen...

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

REVERSIBLE SOLID OXIDE CELLS Mogens Mogensen1  

E-Print Network [OSTI]

The reversibility of solid oxide fuel cells (SOFC), i.e. that they could also work in the solid oxide electrolyser1 REVERSIBLE SOLID OXIDE CELLS Mogens Mogensen1 , Søren Højgaard Jensen1,2 , Anne Hauch1,3 , Ib Chorkendorff2 and Torben Jacobsen3 1 Fuel Cell and Solid State Chemistry Department Risø National Laboratory

362

Solid Oxide Electrolysis Cells Performance and Durability  

E-Print Network [OSTI]

Title: Solid Oxide Electrolysis Cells ­ Performance and Durability Department: Fuel Cells and SolidSolid Oxide Electrolysis Cells ­ Performance and Durability Anne Hauch Risø-PhD-37(EN) Risø : Images from transmission electron microscopy investigation of the H2 electrode for the solid oxide cell

363

Photo-oxides of Carcinogenic Hydrocarbons  

Science Journals Connector (OSTI)

... are involved in the biological action of carcinogenic hydrocarbons, we have attempted to isolate the photo-oxides of some of these hydrocarbons. Such ... -oxides of some of these hydrocarbons. Such photo-oxides would naturally be insoluble in water and hence would represent merely one stage in ...

J. W. COOK; R. MARTIN; E. M. F. ROE

1939-06-17T23:59:59.000Z

364

Dense high temperature ceramic oxide superconductors  

DOE Patents [OSTI]

Dense superconducting ceramic oxide articles of manufacture and methods for producing these articles are described. Generally these articles are produced by first processing these superconducting oxides by ceramic processing techniques to optimize materials properties, followed by reestablishing the superconducting state in a desired portion of the ceramic oxide composite.

Landingham, Richard L. (Livermore, CA)

1993-01-01T23:59:59.000Z

365

ORIGINAL ARTICLE Sulfur oxidizers dominate carbon fixation  

E-Print Network [OSTI]

). Methylotrophs and iron oxidizers were also active in plume waters and expressed key proteins for methane by bacteria (especially, alpha-, gamma- and epsilon-proteobacteria) that likely participate in the oxidationORIGINAL ARTICLE Sulfur oxidizers dominate carbon fixation at a biogeochemical hot spot in the dark

Hansell, Dennis

366

Nanotube Fabrication byNanotube Fabrication by Anodic Aluminum Oxide,Anodic Aluminum Oxide,  

E-Print Network [OSTI]

Nanotube Fabrication byNanotube Fabrication by Anodic Aluminum Oxide,Anodic Aluminum Oxide, Self-regulating phenomena in materials science: Self-assembly of nanopores during anodic oxidation of aluminum (AAO) Self combined anodic aluminum oxide (AAO) nanostructures with atomic layer deposition (ALD) to fabricate

Rubloff, Gary W.

367

Direct oxidation of hydrocarbons in a solid oxide fuel cell. I. Methane oxidation  

SciTech Connect (OSTI)

The performance of Cu cermets as anodes for the direct oxidation of CH{sub 4} in solid oxide fuel cells was examined. Mixtures of Cu and yttria-stabilized zirconia (YAZ) were found to give similar performance to Ni-YSZ cermets when H{sub 2} was used as the fuel, but did not deactivate in dry CH{sub 4}. While Cu-YSZ was essentially inert to methane, the addition of ceria to the anode gave rise to reasonable power densities and stable operation over a period of at least 3 days. Proof of direct oxidation of CH{sub 4} came from chemical analysis of the products leaving the cell. The major carbon-containing product was CO{sub 2}, with only traces of CO observed, and there was excellent agreement between the actual cell current and that predicted by the methane conversion. These results demonstrate that direct, electrocatalytic oxidation of dry methane is possible, with reasonable performance.

Park, S.; Craciun, R.; Vohs, J.M.; Gorte, R.J.

1999-10-01T23:59:59.000Z

368

Parametrized linear muffin-tin orbitals atomic-sphere approximation tight-binding scheme: The electronic structure of MoRu alloys  

Science Journals Connector (OSTI)

In this paper we use the recursion method and a linear muffin-tin orbital atomic-sphere approximation (LMTO-ASA) tight-binding (TB) Hamiltonian taken to first order in E-E?, to obtain the electronic structure of Mo-Ru compounds and amorphous clusters of Mo1-xRux for several values of x. It is well known that the LMTO-ASA-TB formalism treats s, p, and d orbitals in an equivalent manner. Therefore it allows the inclusion of important effects, such as the splitting of the center of the bands due to local environment and s-p-d hybridization. These effects are often neglected in the usual parametrized tight-binding Hamiltonians. The LMTO-ASA-TB Hamiltonian used here is parametrized in the sense that potential parameters for the pure metals were used in the calculations and the relative position of the bands in the binaries was adjusted by imposing approximate charge neutrality. But the parametrization is based on a solid theoretical background and no fitting to more exact first-principles calculations is needed. In this paper we show that for the Mo-Ru compounds, a simple parametrized LMTO-ASA-TB Hamiltonian produces good results, when compared to independent first-principles, self-consistent augmented-spherical-wave k-space calculations. We also use the parametrized LMTO-ASA-TB Hamiltonian to obtain the electronic structure of amorphous Mo1-xRux alloys for several values of x. We show that, for these alloys, the density of states at the Fermi level, N(EF), tends to decrease as the Ru concentration increases. This is in agreement with observed experimental tendencies. We note that when the splitting of band centers and s-p-d hybridization are neglected in the calculations, the trends are reversed, with N(EF) increasing as the Ru concentration increases. This illustrates the importance of taking these effects into account.

Sandra Ferreira; Jaime Duarte; Jr.; Sonia Frota-Pessa

1990-03-15T23:59:59.000Z

369

Nitrogen Oxides Emission Control Options  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nitrogen Nitrogen Oxides Emission Control Options for Coal-Fired Electric Utility Boilers Ravi K. Srivastava and Robert E. Hall U.S. Environmental Protection Agency, National Risk Management Research Laboratory, Air Pollution Prevention and Control Division, Research Triangle Park, NC Sikander Khan and Kevin Culligan U.S. Environmental Protection Agency, Office of Air and Radiation, Clean Air Markets Division, Washington, DC Bruce W. Lani U.S. Department of Energy, National Energy Technology Laboratory, Environmental Projects Division, Pittsburgh, PA ABSTRACT Recent regulations have required reductions in emissions of nitrogen oxides (NO x ) from electric utility boilers. To comply with these regulatory requirements, it is increas- ingly important to implement state-of-the-art NO x con- trol technologies on coal-fired utility boilers. This paper reviews NO x control

370

Semiconductive Properties of Uranium Oxides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SEMICONDUCTIVE PROPERTIES OF URANIUM OXIDES SEMICONDUCTIVE PROPERTIES OF URANIUM OXIDES Thomas Meek Materials Science Engineering Department University of Tennessee Knoxville, TN 37931 Michael Hu and M. Jonathan Haire Chemical Technology Division Oak Ridge National Laboratory * Oak Ridge, Tennessee 37831-6179 August 2000 For the Waste Management 2001 Symposium Tucson, Arizona February 25-March 1, 2001 The submitted manuscript has been authored by a contractor of the U.S. Government under contract DE-AC05-00OR22725. Accordingly, the U.S. Government retains a nonexclusive, royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for U.S. Government purposes. _________________________ * Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy

371

Classification of oxide glasses: A polarizability approach  

SciTech Connect (OSTI)

A classification of binary oxide glasses has been proposed taking into account the values obtained on their refractive index-based oxide ion polarizability {alpha}{sub O2-}(n{sub 0}), optical basicity {lambda}(n{sub 0}), metallization criterion M(n{sub 0}), interaction parameter A(n{sub 0}), and ion's effective charges as well as O1s and metal binding energies determined by XPS. Four groups of oxide glasses have been established: glasses formed by two glass-forming acidic oxides; glasses formed by glass-forming acidic oxide and modifier's basic oxide; glasses formed by glass-forming acidic and conditional glass-forming basic oxide; glasses formed by two basic oxides. The role of electronic ion polarizability in chemical bonding of oxide glasses has been also estimated. Good agreement has been found with the previous results concerning classification of simple oxides. The results obtained probably provide good basis for prediction of type of bonding in oxide glasses on the basis of refractive index as well as for prediction of new nonlinear optical materials.

Dimitrov, Vesselin [Department of Silicate Technology, University of Chemical Technology and Metallurgy, 8 Kl. Ohridski Blvd., Sofia 1756 (Bulgaria); Komatsu, Takayuki [Department of Chemistry, The Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka-shi, Niigata-ken 940-2188 (Japan)]. E-mail: komatsu@chem.nagaokaut.ac.jp

2005-03-15T23:59:59.000Z

372

Kinetics of Diesel Nanoparticle Oxidation  

Science Journals Connector (OSTI)

The oxidation rates in air of diesel nanoparticles sampled directly from the exhaust stream of a medium-duty diesel engine were measured over the temperature range of 800?1140 °C using online aerosol techniques. ... Particulate emission from diesel engines is currently a topic of great concern from both pollution and public health standpoints. ... In addition, the fundamental carbon-to-hydrogen ratio may be different in diesel particles as compared to the commonly used surrogates (15). ...

Kelly J. Higgins; Heejung Jung; David B. Kittelson; Jeffrey T. Roberts; Michael R. Zachariah

2003-03-25T23:59:59.000Z

373

Atmospheric Oxidation of Coal at Moderate Temperatures. Effect of Oxidation on the Carbonizing Properties of Representative Coking Coals.  

Science Journals Connector (OSTI)

Atmospheric Oxidation of Coal at Moderate Temperatures. ... Effect of Oxidation on the Carbonizing Properties of Representative Coking Coals. ...

L Schmidt; J Elder; J Davis

1940-01-01T23:59:59.000Z

374

Nanowire-based All Oxide Solar Cells  

SciTech Connect (OSTI)

We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from p-type cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is enhanced with the addition of an intermediate oxide insulating layer between the nanowires and the nanoparticles. This observation of the important dependence of the shunt resistance on the photovoltaic performance is widely applicable to any nanowire solar cell constructed with the nanowire array in direct contact with one electrode.

Yang*, Benjamin D. Yuhas and Peidong; Yang, Peidong

2008-12-07T23:59:59.000Z

375

Final Technical Report CONDUCTIVE COATINGS FOR SOLAR CELLS USING CARBON NANOTUBES  

SciTech Connect (OSTI)

US Department of Energy (DOE) awarded a grant for Eikos Inc. to investigate the feasibility of developing and utilizing Transparent Conducting Coatings (TCCs) based on carbon nanotubes (CNT) for solar cell applications. Conventional solar cells today employ metal oxide based TCCs with both Electrical Resistivity (R) and Optical Transparency (T), commonly referred to as optoelectronic (RT) performance significantly higher than with those possible with CNT based TCCs available today. Transparent metal oxide based coatings are also inherently brittle requiring high temperature in vacuum processing and are thus expensive to manufacture. One such material is indium tin oxide (ITO). Global demand for indium has recently increased rapidly while supply has diminished causing substantial spikes in raw material cost and availability. In contrast, the raw material, carbon, needed for CNT fabrication is abundantly available. Transparent Conducting Coatings based on CNTs can overcome not only cost and availability constraints while also offering the ability to be applied by existing, low cost process technologies under ambient conditions. Processes thus can readily be designed both for rigid and flexible PV technology platforms based on mature spray or dip coatings for silicon based solar cells and continuous roll to roll coating processes for polymer solar applications.

Paul J Glatkowski; Jorma Peltola; Christopher Weeks; Mike Trottier; David Britz

2007-09-30T23:59:59.000Z

376

Step-Orientation-Dependent Oxidation: From 1D to 2D Oxides  

Science Journals Connector (OSTI)

Using scanning tunneling microscopy and density functional theory, we have studied the initial oxidation of Rh(111) surfaces with two types of straight steps, having {100} and {111} microfacets. The one-dimensional (1D) oxide initially formed at the steps acts as a barrier impeding formation of the 2D oxide on the (111) terrace behind it. We demonstrate that the details of the structure of the 1D oxide govern the rate of 2D oxidation and discuss implications for oxidation of nanoparticles.

J. Klikovits; M. Schmid; L. R. Merte; P. Varga; R. Westerström; A. Resta; J. N. Andersen; J. Gustafson; A. Mikkelsen; E. Lundgren; F. Mittendorfer; G. Kresse

2008-12-29T23:59:59.000Z

377

Fusion Techniques for the Oxidation of Refractory Actinide Oxides  

SciTech Connect (OSTI)

Small-scale experiments were performed to demonstrate the feasibility of fusing refractory actinide oxides with a series of materials commonly used to decompose minerals, glasses, and other refractories as a pretreatment to dissolution and subsequent recovery operations. In these experiments, 1-2 g of plutonium or neptunium oxide (PuO2 or NpO2) were calcined at 900 degrees Celsius, mixed and heated with the fusing reagent(s), and dissolved. For refractory PuO2, the most effective material tested was a lithium carbonate (Li2CO3)/sodium tetraborate (Na2B4O7) mixture which aided in the recovery of 90 percent of the plutonium. The fused product was identified as a lithium plutonate (Li3PuO4) by x-ray diffraction. The use of a Li2CO3/Na2B4O7 mixture to solubilize high-fired NpO2 was not as effective as demonstrated for refractory PuO2. In a small-scale experiment, 25 percent of the NpO2 was oxidized to a neptunium (VI) species that dissolved in nitric acid. The remaining neptunium was then easily recovered from the residue by fusing with sodium peroxide (Na2O2). Approximately 70 percent of the neptunium dissolved in water to yield a basic solution of neptunium (VII). The remainder was recovered as a neptunium (VI) solution by dissolving the residue in 8M nitric acid. In subsequent experiments with Na2O2, the ratio of neptunium (VII) to (VI) was shown to be a function of the fusion temperature, with higher temperatures (greater than approximately 400 degrees C) favoring the formation of neptunium (VII). The fusion of an actual plutonium-containing residue with Na2O2 and subsequent dissolution was performed to demonstrate the feasibility of a pretreatment process on a larger scale. Sodium peroxide was chosen due to the potential of achieving higher actinide recoveries from refractory materials. In this experiment, nominally 10 g of a graphite-containing residue generated during plutonium casting operations was initially calcined to remove the graphite. Removal of combustible material prior to a large-scale fusion with Na2O2 is needed due to the large amount of heat liberated during oxidation. Two successive fusions using the residue from the calcination and the residue generated from the initial dissolution allowed recovery of 98 percent of the plutonium. The fusion of the residue following the first dissolution was performed at a higher temperature (600 degrees Celsius versus 450 degrees Celsius during the first fusion). The ability to recover most of the remaining plutonium from the residue suggest the oxidation efficiency of the Na2O2 fusion improves with higher temperatures similar to results observed with NpO2 fusion.

Rudisill, T.S.

1999-04-15T23:59:59.000Z

378

DISSOLUTION OF NEPTUNIUM OXIDE RESIDUES  

SciTech Connect (OSTI)

This report describes the development of a dissolution flowsheet for neptunium (Np) oxide (NpO{sub 2}) residues (i.e., various NpO{sub 2} sources, HB-Line glovebox sweepings, and Savannah River National Laboratory (SRNL) thermogravimetric analysis samples). Samples of each type of materials proposed for processing were dissolved in a closed laboratory apparatus and the rate and total quantity of off-gas were measured. Samples of the off-gas were also analyzed. The quantity and type of solids remaining (when visible) were determined after post-dissolution filtration of the solution. Recommended conditions for dissolution of the NpO{sub 2} residues are: Solution Matrix and Loading: {approx}50 g Np/L (750 g Np in 15 L of dissolver solution), using 8 M nitric acid (HNO{sub 3}), 0.025 M potassium fluoride (KF) at greater than 100 C for at least 3 hours. Off-gas: Analysis of the off-gas indicated nitric oxide (NO), nitrogen dioxide (NO{sub 2}) and nitrous oxide (N{sub 2}O) as the only identified components. No hydrogen (H{sub 2}) was detected. The molar ratio of off-gas produced per mole of Np dissolved ranged from 0.25 to 0.4 moles of gas per mole of Np dissolved. A peak off-gas rate of {approx}0.1 scfm/kg bulk oxide was observed. Residual Solids: Pure NpO{sub 2} dissolved with little or no residue with the proposed flowsheet but the NpCo and both sweepings samples left visible solid residue after dissolution. For the NpCo and Part II Sweepings samples the residue amounted to {approx}1% of the initial material, but for the Part I Sweepings sample, the residue amounted to {approx}8 % of the initial material. These residues contained primarily aluminum (Al) and silicon (Si) compounds that did not completely dissolve under the flowsheet conditions. The residues from both sweepings samples contained minor amounts of plutonium (Pu) particles. Overall, the undissolved Np and Pu particles in the residues were a very small fraction of the total solids.

Kyser, E

2009-01-12T23:59:59.000Z

379

Why Sequence Freshwater Iron-Oxidizing Bacteria?  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Freshwater Iron-Oxidizing Bacteria? Freshwater Iron-Oxidizing Bacteria? The goal of this project is to obtain complete genome sequences for six different freshwater iron (Fe)-oxidizing bacteria (FeOB). Four of these are oxygen-dependent iron-oxidizing β-proteobacteria, and three of these, Sideroxydans lithotrophicus, Gallionella capsiferriformans, and strain TW-2, are capable of chemolithoautotrophic growth (that is, obtaining energy by the oxidation of inorganic compounds) using Fe(II) as sole energy source under microaerobic (low-oxygen) conditions. The fourth organism, Leptothrix cholodnii, is a sheath-forming heterotrophic (i.e., using complex organic compounds for nutrition) organism that oxidizes both Fe(II) and Mn(II) and deposits a ferromanganic coating on its sheath. In addition,

380

Unfamiliar oxidation states and their stabilization  

E-Print Network [OSTI]

ferrate formation. Oxidation of copper(II) hydroxide in alkaline solution with sodium hydroperoxide, Na.OOH, apparently gives copper (III) oxide.8 Determination of the voltage-current curve for a silver anode in sodium hydroxide solution gives breaks... of a knowledge of the chemical prop erties of the substance in question is made apparent by the following illustration: a compound containing silver and oxygen in equal atomic proportions may be made by the oxidation of unipositive silver...

Kleinberg, Jacob

1950-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Solid-oxide fuel cell electrolyte  

DOE Patents [OSTI]

A solid-oxide electrolyte operable at between 600.degree. C. and 800.degree. C. and a method of producing the solid-oxide electrolyte are provided. The solid-oxide electrolyte comprises a combination of a compound having weak metal-oxygen interactions with a compound having stronger metal-oxygen interactions whereby the resulting combination has both strong and weak metal-oxygen interaction properties.

Bloom, Ira D. (Bolingbrook, IL); Hash, Mark C. (Joliet, IL); Krumpelt, Michael (Naperville, IL)

1993-01-01T23:59:59.000Z

382

High Temperature Oxidation Resistance and Surface Electrical...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

plates with oxidation resistant coatings. Candidate coatings must exhibit chemical and thermal-mechanical stability and high electrical conductivity during long-term...

383

Precursors of copper/zinc oxide catalysts  

Science Journals Connector (OSTI)

Recent results on hydroxycarbonate precursors of copper/zinc oxide catalysts for methanol synthesis are reinterpreted, taking into account earlier work on these systems.

M.S. Spencer

384

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, B.K.

1991-12-17T23:59:59.000Z

385

Double perovskite catalysts for oxidative coupling  

DOE Patents [OSTI]

Alkali metal doped double perovskites containing manganese and at least one of cobalt, iron and nickel are useful in the oxidative coupling of alkane to higher hydrocarbons.

Campbell, K.D.

1991-01-01T23:59:59.000Z

386

Lanthanide doped barium phosphorous oxide scintillators  

DOE Patents [OSTI]

The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped barium phosphorous oxide useful for detecting nuclear material.

Borade, Ramesh B; Bourret-Courchesne, Edith; Denzo, Stephen E

2013-02-26T23:59:59.000Z

387

Breakout Group 5: Solid Oxide Fuel Cells  

Broader source: Energy.gov (indexed) [DOE]

Oxide Fuel Cells PARTICIPANTS Name Organization Robert Ploessl Corning, Inc. Tim Armstrong Oak Ridge National Laboratory Barbara Heydorn SRI International Suresh Baskaran...

388

NETL: Solid Oxide Fuel Cells Publications  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid Oxide Fuel Cells Publications Operating Principles AEC Development Atmospheric Pressure Systems Pressurized Systems Program Plan Project Portfolio Project Information Systems...

389

How to overcome the oxide barrier | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

oxide semiconductor Atomistic diagram for crystalline chromium metal (light blue) on strontium titanate(top), an equation that describes the transport process (middle), and an...

390

Cation Defects and Conductivity in Transparent Oxides  

SciTech Connect (OSTI)

High quality doped zinc oxide and mixed transition metal spinel oxide films have been deposited by means of sputter deposition from metal and metal oxide targets, and by spin casting from aqueous or alcoholic precursor solutions. Deposition conditions and post-deposition processing are found to alter cation oxidation states and their distributions in both oxide materials resulting in marked changes to both optical transmission and electrical response. For ZnO, partial reduction of the neat or doped material by hydrogen treatment of the heated film or by electrochemical processing renders the oxide n-type conducting. Continued reduction was found to diminish conductivity. In contrast, oxidation of the infrared transparent p-type spinel conductors typified by NiCo2O4 was found to increase conductivity. The disparate behavior of these two materials is caused in part by the sign of the charge carrier and by the existence of two different charge transport mechanisms that are identified as free carrier conduction and polaron hopping. While much work has been reported concerning structure/property relationships in the free carrier conducting oxides, there is a significantly smaller body of information on transparent polaron conductors. In this paper, we identify key parameters that promote conductivity in mixed metal spinel oxides and compare their behavior with that of the free carrier TCO’s.

Exarhos, Gregory J.; Windisch, Charles F.; Ferris, Kim F.; Owings, Robert R.

2007-10-24T23:59:59.000Z

391

Photosynthetic water oxidation versus photovoltaic water electrolysis  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

News Media about Center Center Video Library Bisfuel Picture Gallery Photosynthetic water oxidation versus photovoltaic water electrolysis 13 May 2011 Professor Tom Moore, a...

392

Oxidative Remobilization of Technetium Sequestered by Sulfide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Remobilization of Technetium Sequestered by Sulfide-Transformed Nano Zerovalent Iron. Oxidative Remobilization of Technetium Sequestered by Sulfide-Transformed Nano Zerovalent...

393

Graphene oxide/poly(acrylic acid) hydrogel by ?-ray pre-irradiation on graphene oxide surface  

Science Journals Connector (OSTI)

Graphene oxide/poly(acrylic acid) (GO/PAA)...?...-ray pre-irradiation technique. The functional groups in graphene oxide were modified to peroxide in an...2 environment with ?...-ray radiation. Radical species fr...

Sungyoung Lee; Hoik Lee; Jae Hyun Sim; Daewon Sohn

2014-02-01T23:59:59.000Z

394

The Oxidation of Ferritic Stainless Steels in Simulated Solid-Oxide Fuel-Cell Atmospheres  

Science Journals Connector (OSTI)

The cyclic oxidation of a variety of chromia-forming ferritic stainless steels has been studied in the temperature range 700–900°C in atmospheres relevant to solid-oxide fuel-cell operation. The most detriment...

J. E. Hammer; S. J. Laney; R. W. Jackson; K. Coyne; F. S. Pettit…

2007-02-01T23:59:59.000Z

395

Correlating Catalytic Methanol Oxidation with the Structure and Oxidation State of Size-Selected Pt Nanoparticles  

E-Print Network [OSTI]

of this process is a limiting factor in the performance of direct methanol fuel cells, which produce electricityCorrelating Catalytic Methanol Oxidation with the Structure and Oxidation State of Size-Selected Pt nanoparticles (NPs) prepared by micelle encapsulation and supported on -Al2O3 during the oxidation of methanol

Kik, Pieter

396

Investigation of Self-Assembly and Micelle Polarity for a Wide Range of Ethylene Oxide-Propylene Oxide-Ethylene  

E-Print Network [OSTI]

Investigation of Self-Assembly and Micelle Polarity for a Wide Range of Ethylene Oxide-Propylene Oxide-Ethylene Oxide Block Copolymers in Water Josias R. Lopes and Watson Loh* Instituto de Qui of 15 EO-PO-EO (EO ) ethylene oxide, PO ) propylene oxide) block copolymers by using three different

Loh, Watson

397

Increased Cytotoxicity of Oxidized Flame Soot  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Increased Cytotoxicity of Oxidized Flame Soot Increased Cytotoxicity of Oxidized Flame Soot Title Increased Cytotoxicity of Oxidized Flame Soot Publication Type Journal Article Year of Publication 2012 Authors Holder, Amara L., Brietta J. Carter, Regine Goth-Goldstein, Donald Lucas, and Catherine P. Koshland Journal Atmospheric Pollution Research Volume 3 Start Page 25 Issue 1 Pagination 25-31 Date Published 01/2012 Keywords health effects, ozone, soot, toxicity Abstract Combustion-generated particles released into the atmosphere undergo reactions with oxidants, which can change the particles' physiochemical characteristics. In this work, we compare the physical and chemical properties and cellular response of particles fresh from a flame with those oxidized by ozone and nitrogen dioxide. The reaction with ozone and nitrogen dioxide does not significantly modify the physical characteristics of the particles (primary particle size, fractal dimension, and surface area). However, oxidation affects the chemical characteristics of the particles, creating more oxygen and nitrogen containing functional groups, and increases their hydrophilicity. In addition, oxidized soot generates more reactive oxygen species, as measured by the dithiothreitol (DTT) assay. Furthermore, oxidized soot is 1.5-2 times more toxic than soot that was not reacted with ozone, but the inflammatory response, measured by interleukin-8 (IL-8) secretion, is unchanged. These results imply that combustion-generated particles released into the atmosphere will have an increased toxicity on or after high ozone days.

398

Constraining Mercury Oxidation Using Wet Deposition  

E-Print Network [OSTI]

Constraining Mercury Oxidation Using Wet Deposition Noelle E. Selin and Christopher D. Holmes mercury oxidation [Selin & Jacob, Atmos. Env. 2008] 30 60 90 120 150 30 60 90 120 150 30 60 90 120 150 30 Influences on Mercury Wet Deposition · Hg wet dep = f(precipitation, [Hg(II)+Hg(P)]) Correlation (r2) between

Selin, Noelle Eckley

399

Nanocomposite of graphene and metal oxide materials  

SciTech Connect (OSTI)

Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

2012-09-04T23:59:59.000Z

400

Evaluating Environmental Influences Oxidation Kinetics by a  

E-Print Network [OSTI]

strategies for remediation of As-contaminated waters. In this study, the influence of goethite (R D O N A L D L . S P A R K S Department of Land, Air and Water Resources, The University of As-Mn systems demonstrate rapid oxidation of AsIII , catalyzed by Mn-oxides, producing less toxic

Sparks, Donald L.

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

The High-Temperature Oxidation of Propane  

Science Journals Connector (OSTI)

...research-article The High-Temperature Oxidation of Propane J. W. Falconer J. H. Knox Above 400 degrees C propane is oxidized by a two-stage degenerately...of propylene becomes important. While propane still in the main reacts to form propylene...

1959-01-01T23:59:59.000Z

402

Apparatus and method for oxidizing organic materials  

DOE Patents [OSTI]

The invention is a method and apparatus using high cerium concentration in the anolyte of an electrochemical cell to oxidize organic materials. The method and apparatus further use an ultrasonic mixer to enhance the oxidation rate of the organic material in the electrochemical cell. 6 figs.

Surma, J.E.; Bryan, G.H.; Geeting, J.G.H.; Butner, R.S.

1998-01-13T23:59:59.000Z

403

nitrogen oxides | OpenEI  

Open Energy Info (EERE)

20 20 Varnish cache server Browse Upload data GDR 429 Throttled (bot load) Error 429 Throttled (bot load) Throttled (bot load) Guru Meditation: XID: 2142279720 Varnish cache server nitrogen oxides Dataset Summary Description Emissions from energy use in buildings are usually estimated on an annual basis using annual average multipliers. Using annual numbers provides a reasonable estimation of emissions, but it provides no indication of the temporal nature of the emissions. Therefore, there is no way of understanding the impact on emissions from load shifting and peak shaving technologies such as thermal energy storage, on-site renewable energy, and demand control. Source NREL Date Released April 11th, 2011 (3 years ago) Date Updated April 11th, 2011 (3 years ago)

404

Oxidation of carburized Hastelloy X  

SciTech Connect (OSTI)

In a high temperature gas-cooled reactor (HTGR), small quantities of impurities such as H/sub 2/, H/sub 2/O, CO, CO/sub 2/, and CH/sub 4/ are present in the helium coolant. Prolonged exposure to these impurities at high temperature can result in undesirable mechanical properties due to corrosion. Extensive research has been performed on many candidate alloys to study their properties in HTGR helium, and in addition to oxidation, it has been found that carburization is also a possible problem in HTGR. Carbon in the graphite core, carried out by carbon-containing impurities such as CO and CH/sub 4/, can deposit on and diffuse into metallic components and cause carburization. The purpose of this research was to study the effects of carburization on an accelerated test.

Gan, D.

1983-07-01T23:59:59.000Z

405

Evaporative oxidation treatability test report  

SciTech Connect (OSTI)

In 1992, Congress passed the Federal Facilities Compliance Act that requires the U.S. Department of Energy (DOE) to treat and dispose of its mixed waste in accordance with the Resource Conservation and Recovery Act (RCRA) land disposal restrictions (LDRs). In response to the need for mixed-waste treatment capacity where available off-site commercial treatment facilities do not exist or cannot be used, the DOE Albuquerque Operations Office (DOE-AL) organized a Treatment Selection Team to match mixed wastes with treatment options and develop a strategy for treatment of its mixed wastes. DOE-AL manages operations at nine sites with mixed-waste inventories. The Treatment Selection Team determined a need to develop mobile treatment capacity to treat wastes at the sites where the wastes are generated. Treatment processes used for mixed waste not only must address the hazardous component (i.e., meet LDRs) but also must contain the radioactive component in a form that allows final disposal while protecting workers, the public, and the environment. On the basis of recommendations of the Treatment Selection Team, DOE-AL assigned projects to the sites to bring mixed-waste treatment capacity on-line. The three technologies assigned to the DOE Grand Junction Projects Office (GJPO) are evaporative oxidation, thermal desorption, and treated wastewater evaporation. Rust Geotech, the DOE-GJPO prime contractor, was assigned to design and fabricate mobile treatment units (MTUs) for these three technologies and to deliver the MTUs to selected DOE-AL sites. To conduct treatability tests at the GJPO, Rust leased a pilot-scale evaporative oxidation unit from the Clemson Technical Center (CTC), Anderson, South Carolina. The purpose of this report is to document the findings and results of tests performed using this equipment.

NONE

1995-04-01T23:59:59.000Z

406

EIA - Greenhouse Gas Emissions - Nitrous Oxide Emissions  

Gasoline and Diesel Fuel Update (EIA)

4. Nitrous Oxide Emissions 4. Nitrous Oxide Emissions 4.1 Total emissions U.S. nitrous oxide emissions in 2009 were 4 MMTCO2e (1.7 percent) below their 2008 total (Table 22). Sources of U.S. nitrous oxide emissions include agriculture, energy use, industrial processes, and waste management (Figure 22). The largest source is agriculture (73 percent), and the majority of agricultural emissions result from nitrogen fertilization of agricultural soils (87 percent of the agriculture total) and management of animal waste (13 percent). U.S. nitrous oxide emissions rose from 1990 to 1994, fell from 1994 to 2002, and returned to an upward trajectory from 2003 to 2007, largely as a result of increased use of synthetic fertilizers. Fertilizers are the primary contributor of emissions from nitrogen fertilization of soils, which grew by more than 30 percent from

407

Two Dimensional Polymer That Generates Nitric Oxide.  

DOE Patents [OSTI]

A polymeric composition that generates nitric oxide and a process for rendering the surface of a substrate nonthrombogenic by applying a coating of the polymeric composition to the substrate are disclosed. The composition comprises: (1) a crosslinked chemical combination of (i) a polymer having amino group-containing side chains along a backbone forming the polymer, and (ii) a crosslinking agent containing functional groups capable of reacting with the amino groups; and (2) a plurality of nitric oxide generating functional groups associated with the crosslinked chemical combination. Once exposed to a physiological environment, the coating generates nitric oxide thereby inhibiting platelet aggregation. In one embodiment, the nitric oxide generating functional groups are provided by a nitrated compound (e.g., nitrocellulose) imbedded in the polymeric composition. In another embodiment, the nitric oxide generating functional groups comprise N2O2- groups covalently bonded to amino groups on the polymer.

McDonald, William F. (Utica, OH); Koren, Amy B. (Lansing, MI)

2005-10-04T23:59:59.000Z

408

Revealing the Nature of Emergent Ferromagnetism at an Oxide Heterointe...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of thin-film structures 6-8. LaAlO3 (lanthanum aluminium oxide, LAO) and SrTiO3 (strontium titanium oxide, STO) materials are perovskites, a class of mineral oxides whose...

409

Graphene oxide-based materials : synthesis, characterization and applications.  

E-Print Network [OSTI]

??In this study, the properties and applications of graphene oxide-based materials have been explored. Specifically, graphene oxide, i.e. a single layer of graphite oxide, reduced… (more)

Zhou, Xiaozhu.

2010-01-01T23:59:59.000Z

410

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction  

SciTech Connect (OSTI)

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7?dB for 2?V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5?nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O'Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States)] [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States) [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

2013-12-16T23:59:59.000Z

411

Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode  

SciTech Connect (OSTI)

We report formation of polycarbazole (PCz)–graphene nanocomposite over indium tin oxide (ITO) coated glass substrate using electrochemical technique for fabrication of high performance Schottky diodes. The synthesized nanocomposite is characterized before fabrication of devices for confirmation of uniform distribution of graphene nanosheets in the polymer matrix. Pure PCz and PCz-graphene nanocomposites based Schottky diodes are fabricated of configuration Al/PCz/ITO and Al/PCz-graphene nanocomposite/ITO, respectively. The current density–voltage (J-V) characteristics and diode performance parameters (such as the ideality factor, barrier height, and reverse saturation current density) are compared under ambient condition. Al/PCz-graphene nanocomposite/ITO device exhibits better ideality factor in comparison to the device formed using pure PCz. It is also observed that the Al/PCz-graphene nanocomposite/ITO device shows large forward current density and low turn on voltage in comparison to Al/PCz/ITO device.

Pandey, Rajiv K.; Singh, Arun Kumar; Prakash, Rajiv, E-mail: rprakash.mst@itbhu.ac.in [School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 (India)] [School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 (India)

2013-12-15T23:59:59.000Z

412

Effect of simultaneous electrical and thermal treatment on the performance of bulk heterojunction organic solar cell blended with organic salt  

SciTech Connect (OSTI)

This work presents the influence of simultaneous electrical and thermal treatment on the performance of organic solar cell blended with organic salt. The organic solar cells were composed of indium tin oxide as anode, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]: (6,6)-phenyl-C61 butyric acid methyl ester: tetrabutylammonium hexafluorophosphate blend as organic active layer and aluminium as cathode. The devices underwent a simultaneous fixed-voltage electrical and thermal treatment at different temperatures of 25, 50 and 75 °C. It was found that photovoltaic performance improved with the thermal treatment temperature. Accumulation of more organic salt ions in the active layer leads to broadening of p-n doped regions and hence higher built-in electric field across thin intrinsic layer. The simultaneous electrical and thermal treatment has been shown to be able to reduce the electrical treatment voltage.

Sabri, Nasehah Syamin; Yap, Chi Chin; Yahaya, Muhammad [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Salleh, Muhamad Mat [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

2013-11-27T23:59:59.000Z

413

Solution-processed silver nanowires as a transparent conducting electrode for air-stable inverted organic solar cells  

Science Journals Connector (OSTI)

Abstract Highly efficient and air-stable inverted organic solar cells (IOSCs) were fabricated using solution-processed silver nanowire electrodes. The electrodes showed a low sheet resistance of ~ 16 ? sq? 1 and a high transmittance of ~ 95% at a wavelength of 550 nm. A solution-processed ZnO buffer layer is typically used for electron transport and effective passivation of the surface of Ag NW electrodes. The device performance of the \\{IOSCs\\} that used these Ag NW electrodes, which were fabricated on a glass or plastic substrate, was > 94% of that of devices containing indium tin oxide (ITO) electrodes. This indicates that solution-processed Ag NW electrode can replace commercialized ITO and can be utilized in roll-to-roll and large-area fabrication processes.

Myungkwan Song; Jong-Kuk Kim; Shi-Young Yang; Jae-Wook Kang

2014-01-01T23:59:59.000Z

414

Organic photovoltaic cells based on an acceptor of soluble graphene  

Science Journals Connector (OSTI)

In this paper an organic photovoltaicdevice based on an acceptor of solution-processable functionalized graphene was designed. A short circuit current density ( J sc ) of 4.0 mA cm ? 2 open circuit voltage ( V oc ) of 0.72 V and a solar power conversion efficiency of 1.1% were obtained for the device of indium tin oxide/poly(ethylene dioxythiophene) doped with polystyrene sulfonic acid ( 40 nm ) /poly(3-hexylthiophene-1 3-diyl):graphene (graphene 10 wt % 100 nm )/LiF ( 1 nm ) /Al ( 70 nm ) after an annealing treatment under simulated AM1.5G 100 mW illumination in air. Because of the low price ease of preparation and inertness against ambient conditions soluble graphene will be a promising candidate used for acceptor materials in the photovoltaic applications.

Qian Liu; Zunfeng Liu; Xiaoyan Zhang; Nan Zhang; Liying Yang; Shougen Yin; Yongsheng Chen

2008-01-01T23:59:59.000Z

415

High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS{sub 2}-metal heterostructures  

SciTech Connect (OSTI)

We present a study on the photodiode response of vertically stacked graphene/MoS{sub 2}/metal heterostructures in which MoS{sub 2} layers are doped with various plasma species. In comparison with undoped heterostructures, such doped ones exhibit significantly improved quantum efficiencies in both photovoltaic and photoconductive modes. This indicates that plasma-doping-induced built-in potentials play an important role in photocurrent generation. As compared to indium-tin-oxide/ MoS{sub 2}/metal structures, the presented graphene/MoS{sub 2}/metal heterostructures exhibit greatly enhanced quantum efficiencies in the blue-near ultraviolet region, which is attributed to the low density of recombination centers at graphene/MoS{sub 2} heterojunctions. This work advances the knowledge for making photo-response devices based on layered materials.

Wi, Sungjin; Chen, Mikai; Nam, Hongsuk; Liu, Amy C.; Meyhofer, Edgar; Liang, Xiaogan, E-mail: xiaoganl@umich.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-06-09T23:59:59.000Z

416

Current-induced chain migration in semiconductor polymer blends  

SciTech Connect (OSTI)

We have used the technique of neutron reflectometry in order to evaluate the changes that occur within polymer light-emitting devices as they are operated. The devices examined consisted of an indium-tin-oxide, anode, a deuterated-poly(styrene sulfonate)/poly(3,4 ethylenedioxythiophene) (d-PSS/PEDT), charge injection layer, poly(fluorene) (F8), and a low work-function cathode. We found clear evidence for segregation of d-PSS to the d-PSS:PEDT/F8 interface in a device driven until its brightness had fallen to 10% of its initial value. We suggest that this effect is due to Joule heating of the device during operation.

Martin, S.J.; Jones, R.A.L.; Geoghegan, M.; Higgins, A.M.; Grizzi, I.; Halls, J.J.M.; Kirchmeyer, S.; Dalgliesh, R.M. [Department of Physics and Astronomy, University of Sheffield, Hounsfield Road, Sheffield S3 7RH (United Kingdom); CDT Limited, Madingley Road, Cambridge CB3 0TX (United Kingdom); H.C. Starck GmbH, Werk Leverkusen, D-51368 Leverkusen (Germany); ISIS, Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX (United Kingdom)

2005-02-15T23:59:59.000Z

417

Wiremesh Substrates for Enhanced Particulate Oxidation and Efficient...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Wiremesh Substrates for Enhanced Particulate Oxidation and Efficient Urea SCR NOx Reduction Wiremesh Substrates for Enhanced Particulate Oxidation and Efficient Urea SCR NOx...

418

High surface area, electrically conductive nanocarbon-supported metal oxide  

DOE Patents [OSTI]

A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

Worsley, Marcus A; Han, Thomas Yong-Jin; Kuntz, Joshua D; Cervanted, Octavio; Gash, Alexander E; Baumann, Theodore F; Satcher, Jr., Joe H

2014-03-04T23:59:59.000Z

419

Polyelectrolyte-Induced Reduction of Exfoliated Graphite Oxide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reduction of Exfoliated Graphite Oxide: A Facile Route to Synthesis of Soluble Graphene Nanosheets. Polyelectrolyte-Induced Reduction of Exfoliated Graphite Oxide: A Facile...

420

Rational Catalyst Design Applied to Development of Advanced Oxidation...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Catalyst Design Applied to Development of Advanced Oxidation Catalysts for Diesel Emission Control Rational Catalyst Design Applied to Development of Advanced Oxidation...

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Effects of Diesel Exhaust Emissions on Soot Oxidation and DPF...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Diesel Exhaust Emissions on Soot Oxidation and DPF Regeneration Effects of Diesel Exhaust Emissions on Soot Oxidation and DPF Regeneration DPF regeneration experiments verified the...

422

Arginine-Containing Ligands Enhance H-2 Oxidation Catalyst Performance...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Arginine-Containing Ligands Enhance H-2 Oxidation Catalyst Performance. Arginine-Containing Ligands Enhance H-2 Oxidation Catalyst Performance. Abstract: In H2 fuel cells,...

423

Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized via Reactive Layer Assisted Deposition. Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized via Reactive...

424

Photoluminescence Properties of Alkaline-Earth Oxide Nanoparticles...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Properties of Alkaline-Earth Oxide Nanoparticles. Photoluminescence Properties of Alkaline-Earth Oxide Nanoparticles. Abstract: Previous experiments have demonstrated that...

425

Robust control strategies for hybrid solid oxide fuel cell systems.  

E-Print Network [OSTI]

??Solid Oxide Fuel Cell (SOFC) systems are electrochemical energy conversion devices characterized by the use of solid oxide as the electrolyte. They operate at high… (more)

Mathew, Anju Ann

2010-01-01T23:59:59.000Z

426

Biostimulation of Iron Reduction and Subsequent Oxidation of...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Biostimulation of Iron Reduction and Subsequent Oxidation of Sediment Containing Fe-silicates and Fe-oxides: Effect of Redox Biostimulation of Iron Reduction and Subsequent...

427

Graphene/metal Oxide Nanocomposites for Li-ion Batteries  

Science Journals Connector (OSTI)

Our work focuses on preparing the graphene/metal oxide nanocomposites by facile methold and exploring the graphene/metal oxide composites with unique structural or compositions for...

Liang, Junfei; Li, Lidong; Guo, Lin

428

Enzyme-free Detection of Hydrogen Peroxide from Cerium Oxide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

free Detection of Hydrogen Peroxide from Cerium Oxide Nanoparticles Immobilized on Poly(4-vinylpyridine) Self-Assembled Enzyme-free Detection of Hydrogen Peroxide from Cerium Oxide...

429

Impact of the Fuel Molecular Structure on the Oxidation Process...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Oxidation Process of Real Diesel fuels According to Storage Conditions and Biodiesel Content Impact of the Fuel Molecular Structure on the Oxidation Process of Real Diesel fuels...

430

EIS-0360: Depleted Uranium Oxide Conversion Product at the Portsmouth...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

60: Depleted Uranium Oxide Conversion Product at the Portsmouth, Ohio Site EIS-0360: Depleted Uranium Oxide Conversion Product at the Portsmouth, Ohio Site Summary This...

431

Solid Oxide Membrane (SOM) Electrolysis of Magnesium: Scale-Up...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Solid Oxide Membrane (SOM) Electrolysis of Magnesium: Scale-Up Research and Engineering for Light-Weight Vehicles Solid Oxide Membrane (SOM) Electrolysis of Magnesium: Scale-Up...

432

Interactions of nickel/zirconia solid oxide fuel cell anodes...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Interactions of nickelzirconia solid oxide fuel cell anodes with coal gas containing arsenic. Interactions of nickelzirconia solid oxide fuel cell anodes with coal gas containing...

433

Advanced Oxidation & Stabilization of PAN-Based Carbon Precursor...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

More Documents & Publications Advanced Oxidation & Stabilization of PAN-Based Carbon Precursor Fibers Advanced Oxidation & Stabilization of PAN-Based Carbon Precursor...

434

Advanced Oxidation & Stabilization of PAN-Based Carbon Precursor...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

More Documents & Publications Advanced Oxidation & Stabilization of PAN-Based Carbon Precursor Fibers Vehicle Technologies Office Merit Review 2014: Advanced Oxidation &...

435

Direct Measurement of Oxygen Incorporation into Thin Film Oxides...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

436

Radiation Stability of Nanoclusters in Nano-structured Oxide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Stability of Nanoclusters in Nano-structured Oxide Dispersion Strengthened (ODS) Steels. Radiation Stability of Nanoclusters in Nano-structured Oxide Dispersion Strengthened (ODS)...

437

Understanding Atom Probe Tomography of Oxide-Supported Metal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atom Probe Tomography of Oxide-Supported Metal Nanoparticles by Correlation with Atomic Resolution Electron Understanding Atom Probe Tomography of Oxide-Supported Metal...

438

Taking snapshots of different redox states of the water oxidation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

natural photosynthetic water oxidation mechanism empowers designers of artificial photosynthesis with knowledge to construct better water oxidation catalysts for solar fuel...

439

Emergent Phenomena at Oxide Interfaces  

SciTech Connect (OSTI)

Transition metal oxides (TMOs) are an ideal arena for the study of electronic correlations because the s-electrons of the transition metal ions are removed and transferred to oxygen ions, and hence the strongly correlated d-electrons determine their physical properties such as electrical transport, magnetism, optical response, thermal conductivity, and superconductivity. These electron correlations prohibit the double occupancy of metal sites and induce a local entanglement of charge, spin, and orbital degrees of freedom. This gives rise to a variety of phenomena, e.g., Mott insulators, various charge/spin/orbital orderings, metal-insulator transitions, multiferroics, and superconductivity. In recent years, there has been a burst of activity to manipulate these phenomena, as well as create new ones, using oxide heterostructures. Most fundamental to understanding the physical properties of TMOs is the concept of symmetry of the order parameter. As Landau recognized, the essence of phase transitions is the change of the symmetry. For example, ferromagnetic ordering breaks the rotational symmetry in spin space, i.e., the ordered phase has lower symmetry than the Hamiltonian of the system. There are three most important symmetries to be considered here. (i) Spatial inversion (I), defined as r {yields} -r. In the case of an insulator, breaking this symmetry can lead to spontaneous electric polarization, i.e. ferroelectricity, or pyroelectricity once the point group belongs to polar group symmetry. (ii) Time-reversal symmetry (T) defined as t {yields} -t. In quantum mechanics, the time-evolution of the wave-function {Psi} is given by the phase factor e{sup -iEt/{h_bar}} with E being the energy, and hence time-reversal basically corresponds to taking the complex conjugate of the wave-function. Also the spin, which is induced by the 'spinning' of the particle, is reversed by time-reversal. Broken T-symmetry is most naturally associated with magnetism, since the spin operator changes sign with T-operation. (iii) Gauge symmetry (G), which is associated with a change in the phase of the wave-function as {Psi} {yields} e{sup i{theta}}{Psi}. Gauge symmetry is connected to the law of charge conservation, and broken G-symmetry corresponds to superconductivity/superfluidity. To summarize, the interplay among these electronic degrees of freedom produces various forms of symmetry breaking patterns of I, T, and G, leading to novel emergent phenomena, which can appear only by the collective behavior of electrons and cannot be expected from individual electrons. Figure 1 shows this schematically by means of several representative phenomena. From this viewpoint, the interfaces of TMOs offer a unique and important laboratory because I is already broken by the structure itself, and the detailed form of broken I-symmetry can often be designed. Also, two-dimensionality usually enhances the effects of electron correlations by reducing their kinetic energy. These two features of oxide interfaces produce many novel effects and functions that cannot be attained in bulk form. Given that the electromagnetic responses are a major source of the physical properties of solids, and new gauge structures often appear in correlated electronic systems, we put 'emergent electromagnetism' at the center of Fig. 1.

Hwang, H.Y.

2012-02-16T23:59:59.000Z

440

Surface oxidation of Permalloy thin films  

SciTech Connect (OSTI)

The chemical and magnetic structures of oxides on the surface of Permalloy Ni{sub 81}Fe{sub 19} films were investigated as functions of annealing time with x-ray and polarized neutron reflectometry. For annealing times of less than one hour, the oxide consisted of a 1.5-nm-thick layer of NiO on an Fe oxide layer that was in contact with Permalloy. The Fe oxide thickness increases with annealing time with a parabolic rate constant of 10{sup -18} cm{sup 2} s{sup -1} (for an annealing temperature of 373 K). The growth of the oxide layer is limited by the rate at which oxygen appears below the NiO layer. No portion of the oxide region was found to be ferromagnetically ordered for films annealed less than one hour. The growth of the Fe oxide region is well correlated with the measured increase of the second-order magnetic susceptibility for similarly prepared samples.

Fitzsimmons, M. R.; Crawford, T. M. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Silva, T. J. [National Institute of Standards and Technology, Boulder, Colorado 80303 (United States)

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Direct atomic-scale observation of layer-by-layer oxide growth during magnesium oxidation  

SciTech Connect (OSTI)

The atomic-scale oxide growth dynamics are directly revealed by in situ high resolution transmission electron microscopy during the oxidation of Mg surface. The oxidation process is characterized by the layer-by-layer growth of magnesium oxide (MgO) nanocrystal via the adatom process. Consistently, the nucleated MgO crystals exhibit faceted surface morphology as enclosed by (200) lattice planes. It is believed that the relatively lower surface energies of (200) lattice planes should play important roles, governing the growth mechanism. These results facilitate the understanding of the nanoscale oxide growth mechanism that will have an important impact on the development of magnesium or magnesium alloys with improved resistance to oxidation.

Zheng, He; Wu, Shujing; Sheng, Huaping; Liu, Chun; Liu, Yu; Cao, Fan; Zhou, Zhichao; Zhao, Dongshan, E-mail: wang@whu.edu.cn, E-mail: dszhao@whu.edu.cn; Wang, Jianbo, E-mail: wang@whu.edu.cn, E-mail: dszhao@whu.edu.cn [School of Physics and Technology, Center for Electron Microscopy and MOE Key Laboratory of Artificial Micro- and Nano-structures, Wuhan University, Wuhan 430072 (China); Zhao, Xingzhong [School of Physics and Technology, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072 (China)

2014-04-07T23:59:59.000Z

442

Green method to produce propylene oxide  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Materials Materials Argonne National Laboratory Center for Nanoscale Materials U.S. Department of Energy Search CNM ... Search Argonne Home > Center for Nanoscale Materials > CNM Home About CNM Research Facilities People For Users Publications News & Highlights News Research Highlights Newsletters CNM Images on Flickr Events Jobs CNM Users Organization Contact Us Other DOE Nanoscale Science Research Centers Green method to produce propylene oxide conversion of propylene to polyene oxide via silver nanoclusters Simulation of propylene to propylene oxide conversion via silver nanoclusters supported on an alumina surface. Propylene oxide is an important chemical whose current industrial production is energy intensive and environmentally unfriendly. Attempts to solve this problem by using catalysts based on bulk silver surfaces with

443

Why Sequence Sulfur-Oxidizing Bacteria?  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sulfur-Oxidizing Bacteria? Sulfur-Oxidizing Bacteria? Several environmental problems, such as acid rain, biocorrosion, etc., are caused by sulfur compounds, such as sulfur dioxide (SO2) and hydrogen sulfide (H2S). A sustainable process to remove these sulfur compounds is the production of elemental sulfur from H2S-containing gas streams by the use of sulfide-oxidizing bacteria. In this process, H2S is absorbed into the alkaline solution in the scrubber unit, followed by the biological oxidation of H2S to elemental sulfur and the recycling of water. With this two-step process, a variety of gas streams (i.e., natural gas, synthesis gas, biogas, and refinery gas) can be treated. For the treatment of sulfate-containing waste streams, an extra step has to be introduced: the transformation of sulfate into H2S by sulfate-reducing bacteria. In

444

Iridium material for hydrothermal oxidation environments  

DOE Patents [OSTI]

A process for hydrothermal oxidation of combustible materials in which, during at least a part of the oxidation, corrosive material is present and makes contact with at least a portion of the apparatus over a contact area on the apparatus. At least a portion of the contact surface area comprises iridium, iridium oxide, an iridium alloy, or a base metal overlaid with an iridium coating. Iridium has been found to be highly resistant to environments encountered in the process of hydrothermal oxidation. Such environments typically contain greater than 50 mole percent water, together with oxygen, carbon dioxide, and a wide range of acids, bases and salts. Pressures are typically about 27.5 to about 1000 bar while temperatures range as high as 800.degree. C.

Hong, Glenn T. (Tewksbury, MA); Zilberstein, Vladimir A. (Brookline, MA)

1996-01-01T23:59:59.000Z

445

Degenerate cadmium oxide films for electronic devices  

Science Journals Connector (OSTI)

Highly conducting and transparent cadmium oxide films have been deposited on Corning 7059 glass substrates by ion-beam sputtering and by spray pyrolysis. The electrical and optical properties of CdO films prep...

T. L. Chu; Shirley S. Chu

446

Nitrogen oxide delivery systems for biological media  

E-Print Network [OSTI]

Elevated levels of nitric oxide (NO) in vivo are associated with a variety of cellular modifications thought to be mutagenic or carcinogenic. These processes are likely mediated by reactive nitrogen species (RNS) such as ...

Skinn, Brian Thomas

2012-01-01T23:59:59.000Z

447

Direct measurement and analysis of cyclohexadienyl oxidation  

E-Print Network [OSTI]

The oxidation of cyclohexadienyl radical (c-C?H?) and similar resonantly stabilized radicals are important in an astonishing array of processes in nature. Cyclohexadienyl radical has been postulated to be significant in a ...

Taylor, James Wagner

2005-01-01T23:59:59.000Z

448

Assessment of Oxidation in Carbon Foam  

E-Print Network [OSTI]

Carbon foams exhibit numerous unique properties which are attractive for light weight applications such as aircraft and spacecraft as a tailorable material. Carbon foams, when exposed to air, oxidize at temperatures as low as 500-600 degrees Celsius...

Lee, Seung Min

2010-07-14T23:59:59.000Z

449

Metallic Materials in Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

Fe-Cr alloys with variations in chromium content and additions of different elements were studied for potential application in intermediate temperature Solid Oxide Fuel Cell (SOFC). Recently, a new type of FeC...

V. Shemet; J. Piron-Abellan; W.J. Quadakkers…

2005-01-01T23:59:59.000Z

450

Modeling of solid oxide fuel cells  

E-Print Network [OSTI]

A comprehensive membrane-electrode assembly (MEA) model of Solid Oxide Fuel Cell (SOFC)s is developed to investigate the effect of various design and operating conditions on the cell performance and to examine the underlying ...

Lee, Won Yong, S.M. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

451

Oxidation of methionine residues in protein pharmaceuticals  

E-Print Network [OSTI]

(cont.) of free methionine. Therefore, the environments surrounding different methionine sites in G-CSF mainly provide spatial restriction to the access to the solvent but do not affect oxidation in a specific manner, ...

Chu, Jhih-Wei, 1973-

2004-01-01T23:59:59.000Z

452

Bringing oxides into the visible realm | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

visible realm Bringing oxides into the visible realm Reducing the optical band gap of strontium titanate thin films This is a model of the growth process showing one lanthanum and...

453

Oxidized coal in coking: A review  

Science Journals Connector (OSTI)

A literature review shows that the oxidation of coal changes its granulometric composition, packing density, ... clinkering properties, the quality of the resulting coke, and the yield of coking byproducts. On ac...

N. A. Desna; D. V. Miroshnichenko

2011-05-01T23:59:59.000Z

454

Interfacial material for solid oxide fuel cell  

DOE Patents [OSTI]

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

Baozhen, Li (Essex Junction, VT); Ruka, Roswell J. (Pittsburgh, PA); Singhal, Subhash C. (Murrysville, PA)

1999-01-01T23:59:59.000Z

455

Structural Determination of Marine Bacteriogenic Manganese Oxides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

fig 2 Figure 2. (A) X-ray diffraction intensity data for bacteriogenic manganese oxides produced in sea water. The bottom pattern is for clean cells. (B) X-ray diffraction...

456

Microsecond Catalytic Partial Oxidation of Alkanes  

Science Journals Connector (OSTI)

...HICKMAN A. D. , PRODUCTION OF SYNGAS BY DIRECT CATALYTIC-OXIDATION OF METHANE...PFEFFERLE D. L. , CATALYSIS IN COMBUSTION , CATALYSIS...a-alu-mina monoliths coated with Rh (for syngas) (1, 2) or with Pt (for olefins...

Duane A. Goetsch; Lanny D. Schmidt

1996-03-15T23:59:59.000Z

457

Removing sulphur oxides from a fluid stream  

DOE Patents [OSTI]

A process for removing sulphur oxides from a fluid stream, such as flue gas, comprising: providing a non-aqueous absorption liquid containing at least one hydrophobic amine, the liquid being incompletely miscible with water; treating the fluid stream in an absorption zone with the non-aqueous absorption liquid to transfer at least part of the sulphur oxides into the non-aqueous absorption liquid and to form a sulphur oxide-hydrophobic amine-complex; causing the non-aqueous absorption liquid to be in liquid-liquid contact with an aqueous liquid whereby at least part of the sulphur oxide-hydrophobic amine-complex is hydrolyzed to release the hydrophobic amine and sulphurous hydrolysis products, and at least part of the sulphurous hydrolysis products is transferred into the aqueous liquid; separating the aqueous liquid from the non-aqueous absorption liquid. The process mitigates absorbent degradation problems caused by sulphur dioxide and oxygen in flue gas.

Katz, Torsten; Riemann, Christian; Bartling, Karsten; Rigby, Sean Taylor; Coleman, Luke James Ivor; Lail, Marty Alan

2014-04-08T23:59:59.000Z

458

Electron Spectrometer: Scanning Multiprobe Surface Analysis System...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

based systems can be used as electrolytes to develop solid oxide fuel cells for clean energy production and to prevent air... Characterization of Amorphous Zinc Tin Oxide...

459

Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons  

DOE Patents [OSTI]

Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons is carried out over metal vanadate catalysts under oxidizing conditions. The vanadate catalysts are represented by the formulas M[sub 3](VO[sub 4])[sub 2] and MV[sub 2]O[sub 6], M representing Mg, Zn, Ca, Pb, or Cd. The reaction is carried out in the presence of oxygen, but the formation of oxygenate by-products is suppressed.

Kung, H.H.; Chaar, M.A.

1988-10-11T23:59:59.000Z

460

Three-Electrode Metal Oxide Reduction Cell  

DOE Patents [OSTI]

A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

Dees, Dennis W. (Downers Grove, IL); Ackerman, John P. (Downers Grove, IL)

2005-06-28T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Synthesis and processing of monosized oxide powders  

DOE Patents [OSTI]

Uniform-size, high-purity, spherical oxide powders are formed by hydrolysis of alkoxide precursors in dilute alcoholic solutions. Under controlled conditions (concentrations of 0.03 to 0.2 M alkoxide and 0.2 to 1.5 M water, for example) oxide particles on the order of about 0.05 to 0.7 micron can be produced. Methods of doping such powders and forming sinterable compacts are also disclosed.

Barringer, Eric A. (Waltham, MA); Fegley, Jr., M. Bruce (Waban, MA); Bowen, H. Kent (Belmont, MA)

1985-01-01T23:59:59.000Z

462

Process for etching mixed metal oxides  

DOE Patents [OSTI]

An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

Ashby, Carol I. H. (Edgewood, NM); Ginley, David S. (Evergreen, CO)

1994-01-01T23:59:59.000Z

463

Superconductive articles including cerium oxide layer  

DOE Patents [OSTI]

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

Wu, Xin D. (Greenbelt, MD); Muenchausen, Ross E. (Espanola, NM)

1993-01-01T23:59:59.000Z

464

Steam Oxidation of Advanced Steam Turbine Alloys  

SciTech Connect (OSTI)

Power generation from coal using ultra supercritical steam results in improved fuel efficiency and decreased greenhouse gas emissions. Results of ongoing research into the oxidation of candidate nickel-base alloys for ultra supercritical steam turbines are presented. Exposure conditions range from moist air at atmospheric pressure (650°C to 800°C) to steam at 34.5 MPa (650°C to 760°C). Parabolic scale growth coupled with internal oxidation and reactive evaporation of chromia are the primary corrosion mechanisms.

Holcomb, Gordon R.

2008-01-01T23:59:59.000Z

465

Three-electrode metal oxide reduction cell  

DOE Patents [OSTI]

A method of electrochemically reducing a metal oxide to the metal in an electrochemical cell is disclosed along with the cell. Each of the anode and cathode operate at their respective maximum reaction rates. An electrolyte and an anode at which oxygen can be evolved, and a cathode including a metal oxide to be reduced are included as is a third electrode with independent power supplies connecting the anode and the third electrode and the cathode and the third electrode.

Dees, Dennis W. (Downers Groves, IL); Ackerman, John P. (Downers Grove, IL)

2008-08-12T23:59:59.000Z

466

Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation  

SciTech Connect (OSTI)

We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5?nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303?mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

Deng, Chunqing, E-mail: cdeng@uwaterloo.ca; Otto, M.; Lupascu, A., E-mail: alupascu@uwaterloo.ca [Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

2014-01-27T23:59:59.000Z

467

Ethylene oxide and Acetaldehyde in hot cores  

E-Print Network [OSTI]

[Abridged] Ethylene oxide and its isomer acetaldehyde are important complex organic molecules because of their potential role in the formation of amino acids. Despite the fact that acetaldehyde is ubiquitous in the interstellar medium, ethylene oxide has not yet been detected in cold sources. We aim to understand the chemistry of the formation and loss of ethylene oxide in hot and cold interstellar objects (i) by including in a revised gas-grain network some recent experimental results on grain surfaces and (ii) by comparison with the chemical behaviour of its isomer, acetaldehyde. We test the code for the case of a hot core. The model allows us to predict the gaseous and solid ethylene oxide abundances during a cooling-down phase prior to star formation and during the subsequent warm-up phase. We can therefore predict at what temperatures ethylene oxide forms on grain surfaces and at what temperature it starts to desorb into the gas phase. The model reproduces the observed gaseous abundances of ethylene oxid...

Occhiogrosso, A; Herbst, E; Viti, S; Ward, M D; Price, S D; Brown, W A

2014-01-01T23:59:59.000Z

468

Solid oxide fuel cell with monolithic core  

DOE Patents [OSTI]

A solid oxide fuel cell in which fuel and oxidant gases undergo an electrochemical reaction to produce an electrical output includes a monolithic core comprised of a corrugated conductive sheet disposed between upper and lower generally flat sheets. The corrugated sheet includes a plurality of spaced, parallel, elongated slots which form a series of closed, linear, first upper and second lower gas flow channels with the upper and lower sheets within which a fuel gas and an oxidant gas respectively flow. Facing ends of the fuel cell are generally V-shaped and provide for fuel and oxidant gas inlet and outlet flow, respectively, and include inlet and outlet gas flow channels which are continuous with the aforementioned upper fuel gas and lower oxidant gas flow channels. The upper and lower flat sheets and the intermediate corrugated sheet are preferably comprised of ceramic materials and are securely coupled together such as by assembly in the green state and sintering together during firing at high temperatures. A potential difference across the fuel cell, or across a stacked array of similar fuel cells, is generated when an oxidant gas such as air and a fuel such as hydrogen gas is directed through the fuel cell at high temperatures, e.g., between 700 C and 1,100 C. 8 figs.

McPheeters, C.C.; Mrazek, F.C.

1988-08-02T23:59:59.000Z

469

Solid oxide fuel cell with monolithic core  

DOE Patents [OSTI]

A solid oxide fuel cell in which fuel and oxidant gases undergo an electrochemical reaction to produce an electrical output includes a monolithic core comprised of a corrugated conductive sheet disposed between upper and lower generally flat sheets. The corrugated sheet includes a plurality of spaced, parallel, elongated slots which form a series of closed, linear, first upper and second lower gas flow channels with the upper and lower sheets within which a fuel gas and an oxidant gas respectively flow. Facing ends of the fuel cell are generally V-shaped and provide for fuel and oxidant gas inlet and outlet flow, respectively, and include inlet and outlet gas flow channels which are continuous with the aforementioned upper fuel gas and lower oxidant gas flow channels. The upper and lower flat sheets and the intermediate corrugated sheet are preferably comprised of ceramic materials and are securely coupled together such as by assembly in the green state and sintering together during firing at high temperatures. A potential difference across the fuel cell, or across a stacked array of similar fuel cells, is generated when an oxidant gas such as air and a fuel such as hydrogen gas is directed through the fuel cell at high temperatures, e.g., between 700.degree. C. and 1100.degree. C.

McPheeters, Charles C. (Plainfield, IL); Mrazek, Franklin C. (Hickory Hills, IL)

1988-01-01T23:59:59.000Z

470

Conversion of a regenerative oxidizer into catalytic unit  

SciTech Connect (OSTI)

Use of a VOC oxidation catalyst in the existing regenerative thermal oxidizers may greatly reduce fuel consumption and improve the oxidizer performance. This was demonstrated in a commercial 25,000 SCFM unit installed at a printing facility. The paper discusses the principles of the oxidizer retrofit design and test results obtained at various conditions of operation.

Matros, Y.S.; Bunimovich, G.A.; Strots, V.O. [Matros Technologies, Chesterfield, MO (United States)] [and others

1997-12-31T23:59:59.000Z

471

Reactivity and Transformation of Antibacterial N-Oxides in the  

E-Print Network [OSTI]

shown in Figure 1) represent organic N-oxides that are common in many pharmaceuticals, agrochemicals

Huang, Ching-Hua

472

Catalytic oxidation of light alkanes in presence of a base  

DOE Patents [OSTI]

The presence of a base in the reaction mixture in a metal-ligand catalyzed partial oxidation of alkanes results in sustained catalyst activity, and in greater percent conversion as compared with oxidation in the absence of base, while maintaining satisfactory selectivity for the desired oxidation, for example the oxidation of isobutane to isobutanol.

Bhinde, Manoj V. (Boothwyn, PA); Bierl, Thomas W. (West Chester, PA)

1998-01-01T23:59:59.000Z

473

Catalytic oxidation of light alkanes in presence of a base  

DOE Patents [OSTI]

The presence of a base in the reaction mixture in a metal-ligand catalyzed partial oxidation of alkanes results in sustained catalyst activity, and in greater percent conversion as compared with oxidation in the absence of base, while maintaining satisfactory selectivity for the desired oxidation, for example the oxidation of isobutane to isobutanol. 1 fig.

Bhinde, M.V.; Bierl, T.W.

1998-03-03T23:59:59.000Z

474

Methods of producing adsorption media including a metal oxide  

DOE Patents [OSTI]

Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

Mann, Nicholas R; Tranter, Troy J

2014-03-04T23:59:59.000Z

475

Polymorphous Transformations of Nanometric Iron(III) Oxide: A Review  

Science Journals Connector (OSTI)

Because of its polymorphism, iron(III) oxide (ferric oxide, Fe2O3) is one of the most interesting and potentially useful phases of the iron oxides. ... Structural and magnetic properties, methods of synthesis, and applications of seven Fe(III) oxide polymorphs, including rare beta, epsilon, amorphous, and high-pressure forms, are reviewed. ... Films of ?-Fe2O3 nanoparticles were synthesized by oxidizing Fe films rapidly in air. ...

Libor Machala; Ji?í Tu?ek; Radek Zbo?il

2011-06-01T23:59:59.000Z

476

B. Y. Ahn, D. J. Lorang, E. B. Duoss and J. A. Lewis Materials...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

are finding increasing application in photovoltaics, displays, and other optoelectronic devices. Sn-doped indium oxide (ITO)-based sol-gel ink was developed for...

477

Effect of Substrate Thickness on Oxide Scale Spallation for Solid Oxide Fuel Cells  

SciTech Connect (OSTI)

In this paper, the effect of the ferritic substrate's thickness on the delamination/spallation of the oxide scale was investigated experimentally and numerically. At the high-temperature oxidation environment of solid oxide fuel cells (SOFCs), a combination of growth stress with thermal stresses may lead to scale delamination/buckling and eventual spallation during SOFC stack cooling, even leading to serious degradation of cell performance. The growth stress is induced by the growth of the oxide scale on the scale/substrate interface, and thermal stress is induced by a mismatch of the coefficient of thermal expansion between the oxide scale and the substrate. The numerical results show that the interfacial shear stresses, which are the driving force of scale delamination between the oxide scale and the ferritic substrate, increase with the growth of the oxide scale and also with the thickness of the ferritic substrate; i.e., the thick ferritic substrate can easily lead to scale delamination and spallation. Experimental observation confirmed the predicted results of the delamination and spallation of the oxide scale on the ferritic substrate.

Liu, Wenning N.; Sun, Xin; Stephens, Elizabeth V.; Khaleel, Mohammad A.

2011-07-01T23:59:59.000Z

478

Method for facilitating catalyzed oxidation reactions, device for facilitating catalyzed oxidation reactions  

DOE Patents [OSTI]

A catalytic process for the oxidation of organic. Oxygen is loaded into a metal foil by heating the foil while in contact with an oxygen-containing fluid. After cooling the oxygen-activated foil to room temperature, oxygen diffuses through the foil and oxidizes reactants exposed to the other side of the foil.

Beuhler, Robert J. (East Moriches, NY); White, Michael G. (Blue Point, NY); Hrbek, Jan (Rocky Point, NY)

2006-08-15T23:59:59.000Z

479

Nano-sized manganese oxides as biomimetic catalysts for water oxidation in artificial photosynthesis: a review  

Science Journals Connector (OSTI)

...review-article Review articles 1004 30 36 15 Nano-sized manganese oxides as biomimetic...of about approximately 0.5 nm. Thus, nano-sized manganese compounds might be good...particles. In this paper, we focus on nano-sized manganese oxides as functional...

2012-01-01T23:59:59.000Z

480

Synthesis and characterizations of graphene oxide and reduced graphene oxide nanosheets  

SciTech Connect (OSTI)

Interest in graphene on its excellent mechanical, electrical, thermal and optical properties, it’s very high specific surface area, and our ability to influence these properties through chemical functionalization. Chemical reduction of graphene oxide is one of the main routes of preparation for large quantities of graphenes. Hydrazine hydrate used as reducing agent to prepare for the reduced graphene oxide (RGO). There are a number of methods for generating graphene and chemically modified graphene from natural graphite flakes, graphite derivative (such as graphite oxide) and graphite interaction compounds (i.e. expandable graphite). Here we review the use of colloidal suspensions of reduced graphene oxide (RGO) with large scalable, and is adaptable to a wide variety of applications. The graphene oxide (GO) and the reduced material (RGO) were characterized by XRD, UV-Vis spectroscopy, Thermo-gravimetric analysis (TGA), Raman spectroscopy and Field emission Scanning electron microscopy (FESEM) etc.

Venkanna, M., E-mail: venkanna.pcu@gmail.com; Chakraborty, Amit K., E-mail: venkanna.pcu@gmail.com [Carbon Nanotechnology Laboratory, Department of Physics, National Institute of Technology Durgapur, M.G. Avenue, Durgapur - 713209 (India)

2014-04-24T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Inhibition of Oxidation in Nuclear Graphite  

SciTech Connect (OSTI)

Graphite is a fundamental material of high temperature gas cooled nuclear reactors, providing both structure and neutron moderation. Its high thermal conductivity, chemical inertness, thermal heat capacity, and high thermal structural stability under normal and off normal conditions contribute to the inherent safety of these reactor designs. One of the primary safety issues for a high temperature graphite reactor core is the possibility of rapid oxidation of the carbon structure during an off normal design basis event where an oxidizing atmosphere (air ingress) can be introduced to the hot core. Although the current Generation IV high temperature reactor designs attempt to mitigate any damage caused by a postualed air ingress event, the use of graphite components that inhibit oxidation is a logical step to increase the safety of these reactors. Recent experimental studies of graphite containing between 5.5 and 7 wt% boron carbide (B4C) indicate that oxidation is dramatically reduced even at prolonged exposures at temperatures up to 900°C. The proposed addition of B4C to graphite components in the nuclear core would necessarily be enriched in B-11 isotope in order to minimize B-10 neutron absorption and graphite swelling. The enriched boron can be added to the graphite during billet fabrication. Experimental oxidation rate results and potential applications for borated graphite in nuclear reactor components will be discussed.

Phil Winston; James W. Sterbentz; William E. Windes

2013-10-01T23:59:59.000Z

482

Thermo-Oxidation of Tokamak Carbon Dust  

SciTech Connect (OSTI)

The oxidation of dust and flakes collected from the DIII-D tokamak, and various commercial dust specimens, has been measured at 350 ºC and 2.0 kPa O2 pressure. Following an initial small mass loss, most of the commercial dust specimens showed very little effect due to O2 exposure. Similarly, dust collected from underneath DIII-D tiles, which is thought to comprise largely Grafoil™ particulates, also showed little susceptibility to oxidation at this temperature. However, oxidation of the dust collected from tile surfaces has led to ~ 18% mass loss after 8 hours; thereafter, little change in mass was observed. This suggests that the surface dust includes some components of different composition and/or structure – possibly fragments of codeposited layers. The oxidation of codeposit flakes scraped form DIII-D upper divertor tiles showed an initial 25% loss in mass due to heating in vacuum, and the gradual loss of 30-38% mass during the subsequent 24 hours exposure to O2. This behavior is significantly different from that observed for the oxidation of thinner DIII-D codeposit specimens which were still adhered to tile surfaces, and this is thought to be related to the low deuterium content (D/C ~ 0.03 – 0.04) of the flakes.

J.W. Davis; B.W.N. Fitzpatrick; J.P. Sharpe; A.A. Haasz

2008-04-01T23:59:59.000Z

483

Solid Oxide Fuel Cells | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Solid Oxide Fuel Cells Solid Oxide Fuel Cells Solid Oxide Fuel Cells FE researchers at NETL have developed a unique test platform, called the multi-cell array (MCA), to rapidly test multiple fuel cells and determine how they degrade when contaminants exist in the fuel stream, such as might occur when using syngas from a coal gasifier. FE researchers at NETL have developed a unique test platform, called the multi-cell array (MCA), to rapidly test multiple fuel cells and determine how they degrade when contaminants exist in the fuel stream, such as might occur when using syngas from a coal gasifier. Fuel cells are an energy user's dream: an efficient, combustion-less, virtually pollution-free power source, capable of being sited in downtown urban areas or in remote regions that runs almost silently and has few

484

Why Sequence a Methane-Oxidizing Archaean?  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a Methane-Oxidizing Archaeon? a Methane-Oxidizing Archaeon? Methane is a potent greenhouse gas whose atmospheric concentration has increased significantly because of anthropogenic activities and fluctuated naturally over glacial and interglacial cycles. While the importance of methane in Earth's climate dynamics has been well established, the global processes regulating its oceanic cycling remain poorly understood. Although there are high rates of methane production in many marine sedimentary environments (including a number that have been targeted as petroleum reserves), net methane sources from the ocean to the atmosphere appear to be small. This is due in large part to a biogeochemical process known as the anaerobic oxidation of methane (AOM). Microbially mediated AOM reduces methane flux from ocean to atmosphere, stimulates subsurface microbial

485

Reference electrode for strong oxidizing acid solutions  

DOE Patents [OSTI]

A reference electrode for the measurement of the oxidation-reduction potentials of solutions is especially suitable for oxidizing solutions such as highly concentrated and fuming nitric acids, the solutions of nitrogen oxides, N.sub.2 O.sub.4 and N.sub.2 O.sub.5, in nitric acids. The reference electrode is fabricated of entirely inert materials, has a half cell of Pt/Ce(IV)/Ce(III)/70 wt. % HNO.sub.3, and includes a double-junction design with an intermediate solution of 70 wt. % HNO.sub.3. The liquid junctions are made from Corning No. 7930 glass for low resistance and negligible solution leakage.

Rigdon, Lester P. (Livermore, CA); Harrar, Jackson E. (Castro Valley, CA); Bullock, Sr., Jack C. (Pleasanton, CA); McGuire, Raymond R. (Brentwood, CA)

1990-01-01T23:59:59.000Z

486

Lithium metal oxide electrodes for lithium batteries  

DOE Patents [OSTI]

An uncycled electrode for a non-aqueous lithium electrochemical cell including a lithium metal oxide having the formula Li.sub.(2+2x)/(2+x)M'.sub.2x/(2+x)M.sub.(2-2x)/(2+x)O.sub.2-.delta., in which 0.ltoreq.x<1 and .delta. is less than 0.2, and in which M is a non-lithium metal ion with an average trivalent oxidation state selected from two or more of the first row transition metals or lighter metal elements in the periodic table, and M' is one or more ions with an average tetravalent oxidation state selected from the first and second row transition metal elements and Sn. Methods of preconditioning the electrodes are disclosed as are electrochemical cells and batteries containing the electrodes.

Thackeray, Michael M. (Naperville, IL); Kim, Jeom-Soo (Naperville, IL); Johnson, Christopher S. (Naperville, IL)

2008-01-01T23:59:59.000Z

487

Method for fluorination of uranium oxide  

DOE Patents [OSTI]

Highly pure uranium hexafluoride is made from uranium oxide and fluorine. The uranium oxide, which includes UO.sub.3, UO.sub.2, U.sub.3 O.sub.8 and mixtures thereof, is introduced together with a small amount of a fluorine-reactive substance, selected from alkali chlorides, silicon dioxide, silicic acid, ferric oxide, and bromine, into a constant volume reaction zone. Sufficient fluorine is charged into the zone at a temperature below approximately 0.degree. C. to provide an initial pressure of at least approximately 600 lbs/sq. in. at the ambient atmospheric temperature. The temperature is then allowed to rise in the reaction zone until reaction occurs.

Petit, George S. (Oak Ridge, TN)

1987-01-01T23:59:59.000Z

488

In situ oxidation of subsurface formations  

DOE Patents [OSTI]

Methods and systems for treating a hydrocarbon containing formation described herein include providing heat to a first portion of the formation from a plurality of heaters in the first portion, producing produced through one or more production wells in a second portion of the formation, reducing or turning off heat provided to the first portion after a selected time, providing an oxidizing fluid through one or more of the heater wells in the first portion, providing heat to the first portion and the second portion through oxidation of at least some hydrocarbons in the first portion, and producing fluids through at least one of the production wells in the second portion. The produced fluids may include at least some oxidized hydrocarbons produced in the first portion.

Beer, Gary Lee (Houston, TX); Mo, Weijian (Sugar Land, TX); Li, Busheng (Houston, TX); Shen, Chonghui (Calgary, CA)

2011-01-11T23:59:59.000Z

489

Superconductive articles including cerium oxide layer  

DOE Patents [OSTI]

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

Wu, X.D.; Muenchausen, R.E.

1993-11-16T23:59:59.000Z

490

Aromatics oxidation and soot formation in flames  

SciTech Connect (OSTI)

This project is concerned with the kinetics and mechanisms of aromatics oxidation and soot and fullerenes formation in flames. The scope includes detailed measurements of profiles of stable and radical species concentrations in low-pressure one-dimensional premixed flames. Intermediate species identifications and mole fractions, fluxes, and net reaction rates calculated from the measured profiles are used to test postulated reaction mechanisms. Particular objectives are to identify and to determine or confirm rate constants for the main benzene oxidation reactions in flames, and to characterize fullerenes and their formation mechanisms and kinetics.

Howard, J.B.; Pope, C.J.; Shandross, R.A.; Yadav, T. [Massachusetts Institute of Technology, Cambridge (United States)

1993-12-01T23:59:59.000Z

491

Steam reforming utilizing iron oxide catalyst  

SciTech Connect (OSTI)

High activity steam reforming iron oxide catalysts are described. Such catalysts can be unsupported utilizing at least 90% by weight iron oxide and various modifiers (Ai/sub 2/O/sub 3/, K/sub 2/O, CaO, SiO/sub 2/) or unmodified and supported on such things as alumina, CaO impregnated alumina, and lanthanum stabilized alumina. When used in steam reformers such as autothermal and tubular steam reformers, these catalysts demonstrate much improved resistance to carbon plugging.

Setzer, H. T.; Bett, J. A. S.

1985-06-11T23:59:59.000Z

492

Direct electrochemical reduction of metal-oxides  

DOE Patents [OSTI]

A method of controlling the direct electrolytic reduction of a metal oxide or mixtures of metal oxides to the corresponding metal or metals. A non-consumable anode and a cathode and a salt electrolyte with a first reference electrode near the non-consumable anode and a second reference electrode near the cathode are used. Oxygen gas is produced and removed from the cell. The anode potential is compared to the first reference electrode to prevent anode dissolution and gas evolution other than oxygen, and the cathode potential is compared to the second reference electrode to prevent production of reductant metal from ions in the electrolyte.

Redey, Laszlo I. (Downers Grove, IL); Gourishankar, Karthick (Downers Grove, IL)

2003-01-01T23:59:59.000Z

493

Investigation of the Local Structure of Graphene Oxide  

SciTech Connect (OSTI)

A study of the local structure of graphene oxide is presented. Graphene oxide is understood to be partially oxidized graphene. Absorption peaks corresponding to interlayer states suggest the presence of pristine graphitic nanoislands in graphene oxide. Site-projected partial density of states of carbon atoms bonded to oxygen atoms suggests that the broadening of the peak due to interlayer states in the carbon K-edge spectrum of graphene oxide is predominantly due to formation of epoxide linkages. Density functional theory suggests that multilayers of graphene oxide are linked by peroxide-like linkages.

S Saxena; T Tyson; E Negusse

2011-12-31T23:59:59.000Z

494

1. A tank of volume V is to be filled with an ideal gas. Initially the tank is at P1and T1.the port is regulated with a valve, and the port properties are constant at Tin.The tank is well  

E-Print Network [OSTI]

1. A tank of volume V is to be filled with an ideal gas. Initially the tank is at P1and T1.the port is regulated with a valve, and the port properties are constant at Tin.The tank is well insulated so the process is adiabatic. If the final pressure of the tank is Pz,determine the finaltemperature of the tank T

Huang, Haimei

495

Catalytic reactions on well-characterized vanadium oxide catalysts. 1. Oxidation of carbon monoxide  

SciTech Connect (OSTI)

The oxidation of carbon monoxide over unsupported and supported vanadium oxide catalysts was investigated from the standpoint of structure sensitivity. The activity of unsupported V/sub 2/O/sub 5/ markedly decreased the turnover frequency, while the reduction-oxidation treatment of the fused catalyst increased it. The turnover frequency of V/sub 2/O/sub 5//TiO/sub 2/ with low V/sub 2/O/sub 5/ content was much smaller than that of the V/sub 2/O/sub 5//TiO/sub 2/ with high V/sub 2/O/sub 5/ content or the unsupported V/sub 2/O/sub 5/. Such a retarding effect of the TiO/sub 2/ support on the activity of the oxidation of carbon monoxide is in contrast to the known promoting effect of TiO/sub 2/ for the oxidations of various hydrocarbons. From these results coupled with the characterization of the catalysts, it was concluded that the oxidation of carbon monoxide on vanadium oxide catalysts is a structure-sensitive reaction and that the activity of surface defects such as steps, kinks, and vacancies is much higher than that of the surface V=O species in the smooth (010) face of V/sub 2/O/sub 5/. 39 references, 9 figures, 2 tables.

Mori,