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Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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1

Micropatterning of Proteins and Mammalian Cells on Indium Tin Oxide  

E-Print Network [OSTI]

Micropatterning of Proteins and Mammalian Cells on Indium Tin Oxide Sunny S. Shah, Michael C and electrochemical activation to create micropatterned cocultures on indium tin oxide (ITO) substrates applications in tissue engineering and biosensing. KEYWORDS: indium tin oxide photolithography switchable

Revzin, Alexander

2

P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide  

E-Print Network [OSTI]

P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide Sputtering Targets M. Schlott, M from indium-oxide tin-oxide (ITO) targets [1]. Unfor- tunately, black growths, or nodules, commonly isostatic pressing partly reduced powder mixtures of 90 wt.% indium-oxide and 10 wt.% tin-oxide [4

3

Laser Direct Write Patterned Indium Tin Oxide Films for Photomasks and Anisotropic Resist Applications  

E-Print Network [OSTI]

Laser Direct Write Patterned Indium Tin Oxide Films for Photomasks and Anisotropic Resist bimetallic Sn/In film into a indium tin oxide layer. Sn over In films (15-120nm thick) with a 1:10 thickness mask, etch resist. 1. Introduction The transparent and conductive films like indium tin oxide (ITO

Chapman, Glenn H.

4

Sandia National Laboratories: indium tin oxide  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbine blade manufacturing the viabilityindium tin oxide Sandian

5

The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films  

E-Print Network [OSTI]

MRSEC The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films D Science & Engineering Center For zinc-indium-tin oxide (ZITO) films, grown by pulsed-laser deposition was replaced by substitution with zinc and tin in equal molar proportions (co-substitution). All ZITO films

Shahriar, Selim

6

EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes  

E-Print Network [OSTI]

EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes and Technology Clear Water Bay, Kowloon, Hong Kong Abstract Indium-tin oxide anodes capped with certain oxides-emitting diodes (OLEDs). The oxides of tin, zinc, praseodymium, yttrium, gallium, terbium and titanium have been

7

Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells  

E-Print Network [OSTI]

Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

Van Stryland, Eric

8

P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene  

E-Print Network [OSTI]

P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene Terephthalate The wear mechanisms of the Indium Tin Oxide (ITO) coated Polyethylene Terephthalate (PET) topsheet). The bottom substrate is typically glass and the top sheet a polyester such as Polyethylene Terephthalate (PET

Cairns, Darran

9

Patterning of indium tin oxide by projection photoablation and lift-off process for fabrication of flat-panel displays  

E-Print Network [OSTI]

Patterning of indium tin oxide by projection photoablation and lift-off process for fabrication online 25 June 2007 Indium tin oxide ITO , an important material used as a transparent conductive oxide in such fabrication. Therefore, innovations in patterning tech- nology, especially for materials such as indium tin

Jain, Kanti

10

Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement  

E-Print Network [OSTI]

Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

Park, Yong Tae

2012-07-16T23:59:59.000Z

11

Indium tin oxide and indium phosphide heterojunction nanowire array solar cells  

SciTech Connect (OSTI)

Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

Yoshimura, Masatoshi, E-mail: yoshimura@rciqe.hokudai.ac.jp; Nakai, Eiji; Fukui, Takashi [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 0608628 (Japan)] [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 0608628 (Japan); Tomioka, Katsuhiro [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 0608628 (Japan) [Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 0608628 (Japan); PRESTO, Japan Science and Technology Agency (JST), Honcho Kawaguchi, 3320012 Saitama (Japan)

2013-12-09T23:59:59.000Z

12

P-28 / D. R. Cairns P-28: The Effect of Thermal Shrinkage on Indium Tin Oxide Coated  

E-Print Network [OSTI]

P-28 / D. R. Cairns P-28: The Effect of Thermal Shrinkage on Indium Tin Oxide Coated Polyethylene Tin Oxide (ITO) coated Polyethylene Terephthalate (PET) for flexible display applications

Cairns, Darran

13

High-efficiency indium tin oxide/indium phosphide solar cells  

SciTech Connect (OSTI)

Improvements in the performance of indium tin oxide/indium phosphide (ITO/InP) solar cells have been achieved by using dc magnetron sputter deposited /ital n/-ITO onto an epitaxial /ital p///ital p//sup +/ structure grown on good quality commercial /ital p//sup +/ bulk substrates. The composition of the sputtering gas has been investigated and the highest efficiency cells resulted when the surface of the epilayer was exposed to an Ar/H/sub 2/ plasma before depositing the bulk of the ITO in a more typical Ar/O/sub 2/ plasma. With H/sub 2/ processing, record efficiencies of 18.9% global, 1000 W m/sup /minus/2/, 25 /degree/C (17.0% air mass zero) were achieved. Without H/sub 2/ processing, the devices exhibited lower efficiencies and were unstable. Type conversion of the InP was shown to occur and was established as being associated with the ITO (possibly due to Sn donors) rather than sputter damage. These improvements in performance have resulted from the optimization of the doping, thickness, transport, and surface properties of the /ital p/-type base, as well as from better control over the ITO deposition procedure.

Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

1989-06-26T23:59:59.000Z

14

Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic  

E-Print Network [OSTI]

Surface modification of indium tin oxide by plasma treatment: An effective method to improve; accepted for publication 7 January 1997 We demonstrate the improvement of an indium tin oxide anode contact conductivity, and effi- ciency as a hole injector into organic materials, indium tin oxide ITO has been widely

15

Indium tin oxide single-mode waveguide modulator Ray T. Chen, Dan Robinson, Huey Lu, Lev Sadovnik, and Zonh-Zen Ho  

E-Print Network [OSTI]

Indium tin oxide single-mode waveguide modulator Ray T. Chen, Dan Robinson, Huey Lu, Lev Sadovnik containing an indium tin oxide waveguide, two holographic mirrors, two microprisms, and two ohmic contacts range of interest. The index of refraction of an indium tin oxide film can be represented by 362 / SPIE

Chen, Ray

16

Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes  

E-Print Network [OSTI]

: This paper reports on performance enhancement of polymer light-emitting diodes (PLEDs) based on poly(2,5-bis. Keywords : Polymer light emitting diode; Indium tin oxide; Atomic force microscopy; Rutherford backscattering spectroscopy 1. Introduction Polymer light-emitting diodes (PLEDs) have received worldwide

Paris-Sud XI, Université de

17

Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment  

SciTech Connect (OSTI)

Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding ?/2 at 1.0 THz was achieved in a ?517??m-thick cell. The phase shifter exhibits high transmittance (?78%). The driving voltage required for quarter-wave operation is as low as 5.66?V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

Yang, Chan-Shan [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tang, Tsung-Ta [Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (China); Pan, Ru-Pin [Department of Electrophysics, National Chiao Tung University, Hsinchu 30078, Taiwan (China); Yu, Peichen [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Pan, Ci-Ling, E-mail: clpan@phys.nthu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Science of Matters, Hsinchu 30013, Taiwan (China)

2014-04-07T23:59:59.000Z

18

Highly efficient inverted organic solar cells using amino acid modified indium tin oxide as cathode  

SciTech Connect (OSTI)

In this paper, we report that highly efficient inverted organic solar cells were achieved by modifying the surface of indium tin oxide (ITO) using an amino acid, Serine (Ser). With the modification of the ITO surface, device efficiency was significantly enhanced from 0.63% to 4.17%, accompanied with an open circuit voltage (Voc) that was enhanced from 0.30?V to 0.55?V. Ultraviolet and X-ray photoelectron spectroscopy studies indicate that the work function reduction induced by the amino acid modification resulting in the decreased barrier height at the ITO/organic interface played a crucial role in the enhanced performances.

Li, Aiyuan; Nie, Riming; Deng, Xianyu, E-mail: xydeng@hitsz.edu.cn [Research Center for Advanced Functional Materials and Devices, Shenzhen Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Wei, Huaixin; Li, Yanqing; Tang, Jianxin [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123 (China); Zheng, Shizhao; Wong, King-Young [Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)

2014-03-24T23:59:59.000Z

19

Efficient Electro-Optical Modulation Based on Indium Tin Oxide  

E-Print Network [OSTI]

We experimentally demonstrate several electro-optical modulators based on transparent conducting oxides. Our previous work demonstrated the modulator structure on glass substrate with broadband bias polarity-dependent modulation. Further exploration shows similar modulation effect of the modulator on quartz and silicon substrate.

Shi, Kaifeng

2015-01-01T23:59:59.000Z

20

Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism  

SciTech Connect (OSTI)

Indium tin oxide nanowires were grown by the reaction of In and Sn with O{sub 2} at 800?C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In{sub 2}O{sub 3} nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO{sub 2} and suppression of In{sub 2}O{sub 3} permitting compositional and structural tuning from SnO{sub 2} to In{sub 2}O{sub 3} which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position.

Zervos, M., E-mail: zervos@ucy.ac.cy; Giapintzakis, J. [Nanotechnology Research Centre (NRC), University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus); Department of Mechanical and Manufacturing Engineering, University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus); Mihailescu, C. N. [Nanotechnology Research Centre (NRC), University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus); Department of Mechanical and Manufacturing Engineering, University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus); National Institute for Laser, Plasma and Radiation Physics, Str. Atomistilor, P.O. Box MG-36, 077125 Magurele (Romania); Luculescu, C. R. [Department of Mechanical and Manufacturing Engineering, University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus); National Institute for Laser, Plasma and Radiation Physics, Str. Atomistilor, P.O. Box MG-36, 077125 Magurele (Romania); Florini, N.; Komninou, Ph.; Kioseoglou, J. [Nanostructured Materials Microscopy Group (NMMG), Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Othonos, A. [Nanotechnology Research Centre (NRC), University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus); Research Center of Ultrafast Science, Department of Physics, University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus)

2014-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes  

SciTech Connect (OSTI)

In this paper we report on Indium Tin Oxide (ITO)-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend and patterned poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

Schmidt, Morten, E-mail: morten.schmidt@nano.ei.tum.de; Falco, Aniello; Loch, Marius; Lugli, Paolo; Scarpa, Giuseppe [Institute for Nanoelectronics, Technical University of Munich, Arcisstr. 21, 80333 Munich (Germany)

2014-10-15T23:59:59.000Z

22

Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics  

SciTech Connect (OSTI)

The influence of indium tin oxide [(In{sub 2}O{sub 3}:Sn), ITO] material properties on the output performance of organic photovoltaic (OPV) devices has been modelled and investigated. In particular, the effect of altering carrier concentration (n), thickness (t), and mobility (?{sub e}) in ITO films and their impact on the optical performance, parasitic resistances and overall efficiency in OPVs was studied. This enables optimal values of these parameters to be calculated for solar cells made with P3HT:PC{sub 61}BM and PCPDTBT:PC{sub 71}BM active layers. The optimal values of n, t and ?{sub e} are not constant between different OPV active layers and depend on the absorption spectrum of the underlying active layer material system. Consequently, design rules for these optimal values as a function of donor bandgap in bulk-heterojunction active layers have been formulated.

Doggart, P.; Bristow, N.; Kettle, J., E-mail: j.kettle@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean St., Bangor, Gwynedd, Wales LL57 1UT (United Kingdom)

2014-09-14T23:59:59.000Z

23

Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells  

SciTech Connect (OSTI)

The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8?nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55??10{sup ?5} ? cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54??10{sup ?3} ?{sup ?1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10?nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung-Hee University, 1 Seocheon-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Noh, Yong-Jin; Na, Seok-In [Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeonju-si, Jeollabuk-do 561-756 (Korea, Republic of)

2014-09-01T23:59:59.000Z

24

Ultra thin indium tin oxide films on various substrates by pulsed laser deposition  

SciTech Connect (OSTI)

Indium Tin Oxide (ITO) thin films with low resistivities of 0.1--0.2 m{Omega}-cm were deposited on various substrates such as YSZ, glass, and ZnO buffered glass by pulsed laser deposition (PLD). The X-ray rocking curve of crystalline (200) ITO films grown on (100) YSZ had a FWHM as narrow as 0.08{degree}. ITO films grown on ZnO (0001) buffered glass had an single (222) orientation and the X-ray rocking curve had a FWHM of 2.1{degree}. Ultrathin ITO films of 3.6nm were fabricated on YSZ and their electrical properties were measured from 10K--300K. ITO films fabricated on ZnO buffered glass and bare glass were characterized by Hall effect measurements as a function of temperature. The results indicate that the resistivity of ITO films grown by PLD does not depend on the orientation or the structure of the thin film. The resistivity is dominated by impurity scattering in the range of 10K--300K. The authors show that ZnO/glass is a good alternative to bare glass for producing commercial ITO films.

Sun, X.W.; Kwok, H.S. [Hong Kong Univ. of Science and Technology, Kowloon (Hong Kong). Dept. of Electrical and Electronic Engineering; Kim, D.H. [LG Electronics, Seoul (Korea, Republic of)

1998-12-31T23:59:59.000Z

25

Performance enhancement of organic light-emitting diodes by chlorine plasma treatment of indium tin oxide  

SciTech Connect (OSTI)

The characteristics of green phosphorescent organic light-emitting diodes (OLEDs) fabricated on ITO/glass substrates pretreated with low-energy O{sub 2} and Cl{sub 2} plasma were compared. At 20 mA/cm{sup 2}, the OLEDs with O{sub 2} and Cl{sub 2} plasma-treated indium tin oxide (ITO) had voltages of 9.6 and 7.6 eV, and brightness of 9580 and 12380 cd/m{sup 2}, respectively. At {approx}10{sup 4} cd/m{sup 2}, the latter had a 30% higher external quantum efficiency and a 74% higher power efficiency. Photoelectron spectroscopies revealed that Cl{sub 2} plasma treatment created stable In-Cl bonds and raised the work function of ITO by up to 0.9 eV. These results suggest that the better energy level alignment at the chlorinated ITO/organic interface enhances hole injection, leading to more efficient and more reliable operation of the OLEDs. The developed plasma chlorination process is very effective for surface modification of ITO and compatible with the fabrication of various organic electronics.

Cao, X. A.; Zhang, Y. Q. [Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia 26506 (United States)

2012-04-30T23:59:59.000Z

26

Viscoelastic DampingViscoelastic Damping Characteristics of Indium-Tin/Characteristics of Indium-Tin/SiCSiC  

E-Print Network [OSTI]

1 Viscoelastic DampingViscoelastic Damping Characteristics of Indium-Tin/Characteristics of Indium-Tin Approach: Based on past experience, indium-tin has well- characterized stiffness/damping. Fabricate

Swan Jr., Colby Corson

27

Investigation of buried homojunctions in p -InP formed during sputter deposition of both indium tin oxide and indium oxide  

SciTech Connect (OSTI)

Although it is apparent that direct current (dc) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single crystal {ital p}-type InP, the actual mechanism of type conversion of the InP surface is not clear, nor is it immediately obvious how further improvements may be achieved. Previously, we have suggested that type conversion is caused by indiffusion of Sn during the ITO deposition process and additionally demonstrated that this effect is strengthened by the presence of hydrogen in the sputtering gas. Recently, however, efficiencies of almost 17% (Global) have been achieved for cells fabricated by sputter depositing In{sub 2}O{sub 3}(IO) alone, strongly suggesting that the Sn may not be an essential part of type conversion. In this work, a variety of electrical and optical techniques has been used to assess the changes at the ITO/InP and IO/InP interfaces. From these, it is concluded that several mechanisms, including passivation of acceptors by hydrogen and sputter damage,'' occur simultaneously. This analysis suggests several directions for further improvement of these devices.

Gessert, T.A.; Li, X.; Wanlass, M.W.; Nelson, A.J.; Coutts, T.J. (Solar Energy Research Institute, Golden, CO (USA))

1990-05-01T23:59:59.000Z

28

Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes  

SciTech Connect (OSTI)

We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup ?} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2?eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91?cd/A, 102?lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

2014-01-27T23:59:59.000Z

29

Efficient Polymer Solar Cells Fabricated on Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)-Etched Old Indium Tin Oxide Substrates  

SciTech Connect (OSTI)

In organic electronic devices, indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the most common transparent electrode and anodic buffer layer materials, respectively. A widespread concern is that PEDOT:PSS is acidic and etches ITO. We show that this issue is not serious: only a few nanometers of ITO are etched in typical device processing conditions and storage thereafter; conductivity losses are affordable; and optical transmission gains further offset these losses. Organic photovoltaic (OPV) devices fabricated on old ITO (with PEDOT:PSS history) were similar or higher in efficiency than devices on fresh ITO. Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b?]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl

Elshobaki, Moneim [Mansoura University; Anderegg, James [Ames Laboratory; Chaudhary, Sumit [Ames Laboratory

2014-08-13T23:59:59.000Z

30

Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires  

SciTech Connect (OSTI)

We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter?

Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Bong Kyu; Ahn, Chang-Geun; Kim, Sang-Hyeob [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of); Choi, Chel-Jong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-07-21T23:59:59.000Z

31

Indium-tin-oxide-free tris(8-hydroxyquinoline) Al organic light-emitting diodes with 80% enhanced power efficiency  

SciTech Connect (OSTI)

Efficient indium tin oxide (ITO)-free small molecule organic light-emitting diodes (SMOLEDs) with multilayered highly conductive poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) as the anode are demonstrated. PEDOT:PSS/MoO{sub 3}/N,N'-diphenyl- N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPD)/tris(8-hydroxyquinoline) Al (Alq{sub 3})/4,7-diphenyl-1,10-phenanthroline (BPhen)/LiF/Al SMOLEDs exhibited a peak power efficiency of 3.82 lm/W, 81% higher than that of similar ITO-based SMOLEDs (2.11 lm/W). The improved performance is believed to be due to the higher work function, lower refractive index, and decreased surface roughness of PEDOT:PSS vs ITO, and to Ohmic hole injection from PEDOT:PSS to the NPD layer via the MoO{sub 3} interlayer. The results demonstrate that PEDOT:PSS can substitute ITO in SMOLEDs with strongly improved device performance.

Cai, Min; Xiao, Teng; Liu, Rui; Chen, Ying; Shinar, Ruth; Shinar, Joseph

2011-10-11T23:59:59.000Z

32

Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode  

SciTech Connect (OSTI)

We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

2014-07-07T23:59:59.000Z

33

Characterization of Amorphous Zinc Tin Oxide Semiconductors....  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amorphous Zinc Tin Oxide Semiconductors. Characterization of Amorphous Zinc Tin Oxide Semiconductors. Abstract: Amorphous zinc tin oxide (ZTO) was investigated to determine the...

34

GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al{sub 2}O{sub 3} powder  

SciTech Connect (OSTI)

Surface-textured InGaN/GaN light-emitting diodes (LEDs) coated with transparent Al{sub 2}O{sub 3} powder were fabricated by natural lithography combined with inductively coupled plasma etching. For surface texturing, 300 nm size Al{sub 2}O{sub 3} powder is used as an etching mask by simply coating the surface using a spin-coating process. Also, the powders are left on the surface after surface texturing to further increase extraction efficiency. At 20 mA, the light output power of the textured indium tin oxide (ITO) InGaN/GaN LEDs coated with the Al{sub 2}O{sub 3} powder is enhanced by {approx}112% compared with the conventional nontextured ITO LED. The enhanced light output power is attributed to the improved extraction efficiency resulting from an overall decrease in the total internal reflection due to the textured surface and the Al{sub 2}O{sub 3} powder coating.

Kim, T. K.; Kim, S. H.; Yang, S. S.; Son, J. K.; Lee, K. H.; Hong, Y. G.; Shim, K. H.; Yang, J. W.; Lim, K. Y.; Yang, G. M. [Department of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Bae, S. J. [Optowell Co., Ltd., 308, Semiconductor Physics Research Center, 664-14, Dukjin-Dong, Dukjin-Gu, Jeonju 561-756 (Korea, Republic of)

2009-04-20T23:59:59.000Z

35

Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere  

SciTech Connect (OSTI)

The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin fr Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

2014-04-21T23:59:59.000Z

36

Enhancement of conduction noise absorption by hybrid absorbers composed of indium-tin-oxide thin film and magnetic composite sheet on a microstrip line  

SciTech Connect (OSTI)

In order to develop wide-band noise absorbers with a focused design for low frequency performance, this study investigates hybrid absorbers that are composed of conductive indium-tin-oxide (ITO) thin film and magnetic composite sheets. The ITO films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ?10{sup ?4} ? m. Rubber composites with flaky Fe-Si-Al particles are used as the magnetic sheet with a high permeability and high permittivity. For the ITO film with a low surface resistance and covered by the magnetic sheet, approximately 90% power absorption can be obtained at 1?GHz, which is significantly higher than that of the original magnetic sheet or ITO film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the ITO film through increased electric field strength bounded by the upper magnetic composite sheet. However, for the reverse layering sequence of the ITO film, the electric field experienced by ITO film is very weak due to the electromagnetic shielding by the under layer of magnetic sheet, which does not result in enhanced power absorption.

Kim, Sun-Hong; Kim, Sung-Soo, E-mail: sskim@chungbuk.ac.kr [Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

2014-05-05T23:59:59.000Z

37

Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer  

SciTech Connect (OSTI)

Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150?C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100?C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

Chen, Dazheng; Zhang, Chunfu, E-mail: cfzhang@xidian.edu.cn; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue, E-mail: yhao@xidian.edu.cn [State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South Taibai Road, Xi'an 710071 (China)

2014-06-16T23:59:59.000Z

38

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

Solar cells based on dc magnetron sputtered indium tin oxide onto epitaxially grown films of p-InP have been fabricated and analyzed. The best cells had a global efficiency of 18.4% and an air mass zero (AMO) efficiency of 16.0%. The principal fabrication variable considered was the constituency of the sputtering gas and both argon/hydrogen and argon/oxygen mixtures have been used. The former cells have the higher efficiencies, are apparently stable, and exhibit almost ideal junction characteristics. The latter cells are relatively unstable and exhibit much higher ideality factors and reverse saturation current densities. The temperature dependence of the reverse saturation current indicates totally different charge transfer mechanisms in the two cases.

Li, X.; Wanlass, M.W.; Gessert, T.A.; Emery, K.A.; Coutts, T.J.

1989-05-01T23:59:59.000Z

39

Enhanced superconducting pairing interaction in indium-doped tin telluride  

SciTech Connect (OSTI)

The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

Erickson, A.S.

2010-05-03T23:59:59.000Z

40

Enhanced superconducting pairing interaction in indium-doped tin telluride  

SciTech Connect (OSTI)

The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

Erickson, A.S.; Chu, J.-H.; /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Toney, M.F.; Geballe, T.H.; Fisher, I.R.; /SLAC, SSRL /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.

2010-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Jeffrey W. Elam,*, David A. Baker, Alex B. F. Martinson,, Michael J. Pellin, and  

E-Print Network [OSTI]

precise coatings to be applied on all exposed surfaces of nanoporous substrates such as aerogels10 using ALD techniques to apply metal oxide coatings onto porous supports such as anodic aluminum oxide

42

Thickness dependent self limiting 1-D tin oxide nanowire arrays...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

dependent self limiting 1-D tin oxide nanowire arrays by nanosecond pulsed laser irradiation. Thickness dependent self limiting 1-D tin oxide nanowire arrays by nanosecond pulsed...

43

Rank Extraction in Tin-Oxide Sensor Arrays Page 1 of 23 Rank Extraction in Tin-Oxide Sensor Arrays  

E-Print Network [OSTI]

Rank Extraction in Tin-Oxide Sensor Arrays Page 1 of 23 Rank Extraction in Tin-Oxide Sensor Arrays the amount of data to be processed. This work is a first example in feature extraction from tin-oxide sensors element array of tin-oxide sensors is presented. Results are extrapolated to other arrays of chemical

Roppel, Thaddeus A.

44

Lithiation of Tin Oxide: A Computational Study  

E-Print Network [OSTI]

We suggest that the lithiation of pristine SnO forms a layered Li$_\\text{X}$O structure while the expelled tin atoms agglomerate into 'surface' planes separating the Li$_\\text{X}$O layers. The proposed lithiation model widely differs from the common assumption that tin segregates into nano-clusters embedded in the lithia matrix. With this model we are able to account for the various tin bonds that are seen experimentally and explain the three volume expansion phases that occur when SnO undergoes lithiation: (i) at low concentrations Li behaves as an intercalated species inducing small volume increases; (ii) for intermediate concentrations SnO transforms into lithia causing a large expansion; (iii) finally, as the Li concentration further increases a saturation of the lithia takes place until a layered Li$_2$O is formed. A moderate volume expansion results from this last process. We also report a 'zipper' nucleation mechanism that could provide the seed for the transformation from tin oxide to lithium oxide.

Pedersen, Andreas

2015-01-01T23:59:59.000Z

45

Supporting Information Hybrid Tin Oxide-SWNT Nanostructures Based Gas  

E-Print Network [OSTI]

S1 Supporting Information Hybrid Tin Oxide-SWNT Nanostructures Based Gas Sensor Syed Mubeen1 , Min) and (c) showing high magnification SEM images of bare SWNTs and SWNTs coated with tin oxide (-0.4 V vs of bare SWNTs and SWNTs coated with tin oxide (-0.4 V vs. Ag/AgCl wire, 5 C) towards a) H2S, b) acetone

46

Atomic layer deposition of tin oxide films using tetrakis,,dimethylamino... tin Jeffrey W. Elam,a  

E-Print Network [OSTI]

Atomic layer deposition of tin oxide films using tetrakis,,dimethylamino... tin Jeffrey W. Elam dimethylamino tin and hydrogen peroxide. This method avoids problems of corrosion and agglomeration associated with the halogenated compound, SnCl4. Tin oxide films were successfully deposited on a variety of substrates using

47

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films  

SciTech Connect (OSTI)

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50?C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fdrale de Lausanne - EPFL, Rue de la Maladire 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fdrale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fdrale de Lausanne - EPFL, Rue de la Maladire 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fdrale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse dElectronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fdrale de Lausanne - EPFL, Rue de la Maladire 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse dElectronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

2014-09-01T23:59:59.000Z

48

Amorphous tin-cadmium oxide films and the production thereof  

DOE Patents [OSTI]

A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

Li, Xiaonan; Gessert, Timothy A

2013-10-29T23:59:59.000Z

49

Absorption of ac fields in amorphous indium-oxide films  

SciTech Connect (OSTI)

Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3?x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

Ovadyahu, Z. [Racah Institute of Physics, the Hebrew University, Jerusalem 91904 (Israel)

2014-08-20T23:59:59.000Z

50

Room-Temperature Gas Sensing Based on Electron Transfer between Discrete Tin Oxide Nanocrystals and  

E-Print Network [OSTI]

Room-Temperature Gas Sensing Based on Electron Transfer between Discrete Tin Oxide Nanocrystals and the response time. Rutile-structured tin oxide (SnO2) is an n-type semiconducting material widely used in gas

Chen, Junhong

51

Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films  

E-Print Network [OSTI]

Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films Haiyan Fan associated with high pressure. Kaplan et al. found this phase in films grown by deposition of ionized tin. In another study, Shek et al. ob- served o-SnO2 when tin particles with an average size of 6 nm were oxidized

Reid, Scott A.

52

Thermally Activated, Inverted Interfacial Electron Transfer Kinetics: High Driving Force Reactions between Tin Oxide Nanoparticles and  

E-Print Network [OSTI]

between Tin Oxide Nanoparticles and Electrostatically-Bound Molecular Reactants Dennis A. Gaal and Joseph: The kinetics and mechanism of fast electron transfer (ET) between tin oxide nanoparticles and electrostatically-order studies establish that, at least in the short time regime, electrons are transferred directly from the tin

53

Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions  

SciTech Connect (OSTI)

The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO{sub 2}) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO{sub 2}. The H-concentration of the In-doped SnO{sub 2} films increased to (12)??10{sup 19}?cm{sup ?3} by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.

Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); International Center for Young Scientists (ICYS-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Ohsawa, Takeo; Ross, Emily M., E-mail: emross@hmc.edu; Adachi, Yutaka; Haneda, Hajime [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sakaguchi, Isao; Takahashi, Ryosuke [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Paul-Drude-Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Materials Department, University of California, Santa Barbara, California 93106 (United States); White, Mark E.; Tsai, Min-Ying; Speck, James S., E-mail: speck@ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

2014-03-31T23:59:59.000Z

54

Macro- and microscopic properties of strontium doped indium oxide  

SciTech Connect (OSTI)

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In{sub 2}O{sub 3}:(SrO){sub x} were investigated for materials with different doping levels at different temperatures (T?=?20300?C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x?=?10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn{sub 2}O{sub 4}. An unusual property of high level (x?=?10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100200?C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3??10{sup ?13}?cm{sup 2}/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I. [Donetsk Institute for Physics and Technology, National Academy of Sciences of Ukraine, 83114 Donetsk (Ukraine); Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A. [Institute of Materials Science, Darmstadt University of Technology, 64287 Darmstadt (Germany)

2014-07-28T23:59:59.000Z

55

Graphene oxide oxidizes stannous ions to synthesize tin sulfidegraphene nanocomposites with small crystal size for high performance lithium ion  

E-Print Network [OSTI]

Graphene oxide oxidizes stannous ions to synthesize tin sulfide­graphene nanocomposites with small September 2012 DOI: 10.1039/c2jm34864k This study reports a novel strategy of preparing graphene composites by employing graphene oxide as precursor and oxidizer. It is demonstrated that graphene oxide can oxidize

Cao, Guozhong

56

Sensors and Actuators B 118 (2006) 135141 Low temperature indium oxide gas sensors  

E-Print Network [OSTI]

Sensors and Actuators B 118 (2006) 135­141 Low temperature indium oxide gas sensors M. Sucheaa rights reserved. Keywords: Metal oxide thin films; InOx; Gas sensors; Ozone 1. Introduction The interest's attractive for many areas such as transparent electrodes for solar cells and flat panel displays

57

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer  

DOE Patents [OSTI]

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1980-01-01T23:59:59.000Z

58

Electrochemical fabrication and optical properties of porous tin oxide films with structural colors  

SciTech Connect (OSTI)

Photonic crystals with porous features not only provide the capability to control light but also enable structural colors that are environmentally sensitive. Here, we report a novel kind of tin oxide-based photonic crystal featuring periodically arranged air pores fabricated by the periodic anodization of tin foil. The existence of a photonic band gap in the fabricated structure is verified by its vivid color, and its reflective spectra which are responsive to environmental stimuli. Furthermore, the sample colors (i.e., the photonic band gap positions) can be easily adjusted by manipulating the anodization parameters. The theoretical modeling results of these tin oxide photonic crystals agree well with the reported experimental ones.

Cheng, Hua; Shu, Shiwei; Lee, Chris; Zeng, Shanshan [Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, 83 Tat Chee Av. Hong Kong (Hong Kong); Centre for Functional Photonics, City University of Hong Kong, 83 Tat Chee Av. Hong Kong (Hong Kong); Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue (Hong Kong); Lu, Zhouguang [Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Lu, Jian, E-mail: jianlu@cityu.edu.hk, E-mail: yangli@cityu.edu.hk [Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon (Hong Kong); Centre for Advanced Structural Materials, City University of Hong Kong Shenzhen Research Institute, 8 Yuexing 1st Road, Shenzhen Hi-Tech Industrial Park, Nanshan District, Shenzhen (China); Li, Yang Yang, E-mail: jianlu@cityu.edu.hk, E-mail: yangli@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, 83 Tat Chee Av. Hong Kong (Hong Kong); Centre for Functional Photonics, City University of Hong Kong, 83 Tat Chee Av. Hong Kong (Hong Kong); Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue (Hong Kong); City University of Hong Kong Shenzhen Research Institute, 8 Yuexing 1st Road, Shenzhen Hi-Tech Industrial Park, Nanshan District, Shenzhen (China)

2014-10-21T23:59:59.000Z

59

Passivation and anodic oxidation of duplex TiN coating on stainless steel  

SciTech Connect (OSTI)

The passivation and anodic oxidation of duplex TiN coatings deposited by arc ion plating onto prenitrided AISI 304 stainless steel have been studied by potentiodynamic polarization, electrochemical impedance spectroscopy, and Mott-Schottky measurements in 0.1 M H{sub 2}SO{sub 4} + 0.05 M HCl. The chemical composition of the oxidized surface film atop TiN was analyzed by X-ray photoelectron spectroscopy. Up to 1.2 V/SHE the TiN coating exhibits passive behavior, which is attributed to the formation of a TiO{sub 2}-like film of nanometer thickness which grows linearly with anodic potential at a rate of 2.4 nm/V. Above 1.2 V/SHE enhanced anodic oxidation of TiN is observed at a rate of 17.7 nm/V, and the overall corrosion performance is governed both by the oxidized TiN coating and by a metallic Ti interlayer atop the nitrided stainless steel substrate. At all potentials the TiO{sub 2} film is characterized by relatively high donor densities and is, furthermore, terminated by a hydroxylated surface.

Rudenja, S.; Pan, J.; Wallinder, I.O.; Leygraf, C.; Kulu, P.

1999-11-01T23:59:59.000Z

60

On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.  

SciTech Connect (OSTI)

Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

2006-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone  

SciTech Connect (OSTI)

In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1??0.01?nm/cycle within the wide ALD temperature window of 175300?C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3?? cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

Kannan Selvaraj, Sathees [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Feinerman, Alan [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Departments of Bioengineering and Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

2014-01-15T23:59:59.000Z

62

Growth of CrO[subscript 2] coated single crystalline (SnO[subscript 2]) tin oxide nanowires  

E-Print Network [OSTI]

Single crystalline tin oxide (SnO[subscript 2]) nanowires have been synthesized by carbothermal reduction of SnO[subscript 2] nanopowder followed by thermal evaporation of the reduced precursor and growth via the ...

Miao, Guo-Xing

63

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors  

SciTech Connect (OSTI)

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

2014-04-14T23:59:59.000Z

64

Synthesis and Characterization of Mesostructured Tin Oxide with Crystalline  

E-Print Network [OSTI]

synthesis of silica-based mesoporous molecular materials (MCM-41) with uni- formly sized pores,1 routes. The obtained mesoporous metal oxide materials usually consist of amorphous walls, although be of industrial interest. Recently, a mesoporous phase based on SnO2 has been successfully synthesized by using

Qi, Limin

65

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen  

SciTech Connect (OSTI)

The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

2014-06-09T23:59:59.000Z

66

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect (OSTI)

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

67

Extremely Efficient Indium-Tin-Oxide-Free Green Phosphorescent Organic Light-Emitting Diodes  

SciTech Connect (OSTI)

This paper demonstrates extremely efficient (?P,max = 118 lm W?1) ITO-free green phosphorescent OLEDs (PHOLEDs) with multilayered, highly conductive poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) films as the anode. The efficiency is obtained without any outcoupling-enhancing structures and is 44% higher than the 82 lm W?1 of similar optimized ITO-anode PHOLEDs. Detailed simulations show that this improvement is due largely to the intrinsically enhanced outcoupling that results from a weak microcavity effect.

Cai, Min; Ye, Zhuo; Xiao, Teng; Liu, Rui; Chen, Ying; Mayer, Robert W.; Biswas, Rana; Ho, Kai-Ming; Shinar, Ruth; Shinar, Joseph

2012-07-12T23:59:59.000Z

68

Method of forming electrical pathways in indium-tin-oxide coatings  

DOE Patents [OSTI]

An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

Haynes, T.E.

1997-03-04T23:59:59.000Z

69

Method of forming electrical pathways in indium-tin-oxide coatings  

DOE Patents [OSTI]

An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

Haynes, T.E.

1996-12-03T23:59:59.000Z

70

Method of forming electrical pathways in indium-tin-oxide coatings  

DOE Patents [OSTI]

An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

Haynes, Tony E. (Knoxville, TN)

1996-01-01T23:59:59.000Z

71

Method of forming electrical pathways in indium-tin-oxide coatings  

DOE Patents [OSTI]

An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

Haynes, Tony E. (Knoxville, TN)

1997-01-01T23:59:59.000Z

72

Analysis of indium zinc oxide thin films by laser-induced breakdown spectroscopy  

SciTech Connect (OSTI)

We have performed spectroscopic analysis of the plasma generated by Nd:YAG ({lambda} = 266 nm) laser irradiation of thin indium zinc oxide films with variable In content deposited by combinatorial pulsed laser deposition on glass substrates. The samples were irradiated in 5 x 10{sup 4} Pa argon using laser pulses of 5 ns duration and 10 mJ energy. The plasma emission spectra were recorded with an Echelle spectrometer coupled to a gated detector with different delays with respect to the laser pulse. The relative concentrations of indium and zinc were evaluated by comparing the measured spectra to the spectral radiance computed for a plasma in local thermal equilibrium. Plasma temperature and electron density were deduced from the relative intensities and Stark broadening of spectral lines of atomic zinc. Analyses at different locations on the deposited thin films revealed that the In/(In + Zn) concentration ratio significantly varies over the sample surface, from 0.4 at the borders to about 0.5 in the center of the film. The results demonstrate that laser-induced breakdown spectroscopy allows for precise and fast characterization of thin films with variable composition.

Popescu, A. C. [LP3, CNRS - Universite Aix-Marseille, 163 Ave. de Luminy, Marseille 13288 (France); National Institute for Lasers, Plasma and Radiation Physics, Magurele, Ilfov 077125 (Romania); Beldjilali, S. [LP3, CNRS - Universite Aix-Marseille, 163 Ave. de Luminy, Marseille 13288 (France); LPPMCA, Universite des Sciences et de la Technologie d'Oran, BP 1505 El Mnaouer, Oran (Algeria); Socol, G.; Mihailescu, I. N. [National Institute for Lasers, Plasma and Radiation Physics, Magurele, Ilfov 077125 (Romania); Craciun, V. [National Institute for Lasers, Plasma and Radiation Physics, Magurele, Ilfov 077125 (Romania); MAIC, University of Florida, Gainesville, FL 32611 (United States); Hermann, J. [LP3, CNRS - Universite Aix-Marseille, 163 Ave. de Luminy, Marseille 13288 (France)

2011-10-15T23:59:59.000Z

73

Effect of ultraviolet radiation exposure on room-temperature hydrogen sensitivity of nanocrystalline doped tin oxide sensor incorporated into microelectromechanical systems device  

SciTech Connect (OSTI)

The effect of ultraviolet (UV) radiation exposure on the room-temperature hydrogen (H{sub 2}) sensitivity of nanocrystalline indium oxide (In{sub 2}O{sub 3})-doped tin oxide (SnO{sub 2}) thin-film gas sensor is investigated in this article. The present sensor is incorporated into microelectromechanical systems device using sol-gel dip-coating technique. The present sensor exhibits a very high sensitivity, as high as 65 000-110 000, at room temperature, for 900 ppm of H{sub 2} under the dynamic test condition without UV exposure. The H{sub 2} sensitivity is, however, observed to reduce to 200 under UV radiation, which is contrary to the literature data, where an enhanced room-temperature gas sensitivity has been reported under UV radiation. The observed phenomenon is attributed to the reduced surface coverage by the chemisorbed oxygen ions under UV radiation, which is in consonance with the prediction of the constitutive equation, proposed recently by the authors, for the gas sensitivity of nanocrystalline semiconductor oxide thin-film sensors.

Shukla, Satyajit; Agrawal, Rajnikant; Cho, Hyoung J.; Seal, Sudipta; Ludwig, Lawrence; Parish, Clyde [Advanced Materials Processing and Analysis Center (AMPAC) and Mechanical Materials Aerospace Engineering (MMAE) Department, Engineering 381, University of Central Florida, 4000 Central Florida Boulevard, Orlando, Florida 32816 (United States); National Aeronautics and Space Administration (NASA), John F. Kennedy Space Center, Kennedy Space Center (KSC), Florida 32899 (United States)

2005-03-01T23:59:59.000Z

74

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures  

SciTech Connect (OSTI)

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup ?1} s{sup ?1} at low operating voltages (<5?V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Geier, Michael L.; Prabhumirashi, Pradyumna L. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Department of Medicine, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-10T23:59:59.000Z

75

Optical generation of free charge carriers in thin films of tin oxide  

SciTech Connect (OSTI)

The methods of infrared absorption spectroscopy and Raman spectroscopy are used to study nanocrystalline SnO{sub x} films (1 {<=} x {<=} 2) prepared by thermal oxidation of metallic tin layers. A monotonic decrease in the transmittance of films in the infrared region has been observed as a result of exposure of the films to light with the wavelength of 380 nm at room temperature. The effect is at a maximum for the samples with x Almost-Equal-To 2 and is observed for {approx}10 min after switching off of illumination. The mentioned variations in optical properties, similarly to those observed in the case of heating of the samples in the dark, are accounted for by an increase in the concentration of free charge carriers (electrons) in nanocrystals of tin dioxide. The data of infrared spectroscopy and the Drude model are used to calculate the concentrations of photogenerated charge carriers ({approx}10{sup 19} cm{sup -3}); variations in these concentrations in the course of illumination and after switching off of illumination are determined. Mechanisms of observed photogeneration of charge carriers in SnO{sub x} films and possible applications of this effect to gas sensors are discussed.

Zhurbina, I. A., E-mail: zhurbina@vega.phys.msu.ru; Tsetlin, O. I.; Timoshenko, V. Yu. [Moscow State University (Russian Federation)

2011-02-15T23:59:59.000Z

76

In0,53Ga0.47Asp-i-n photodiodes with transparent cadmium tin oxide contacts  

E-Print Network [OSTI]

In0,53Ga0.47Asp-i-n photodiodes with transparent cadmium tin oxide contacts Paul R. Berger,a) Niloy for publication 28 July 1992) A new type of p-i-n In,,,,GaO,,,As photodiode having an optically transparent into the i-region is not relevant avoiding an increased dark current. The photodiodes exhibited leakage

77

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere  

SciTech Connect (OSTI)

An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indiumgalliumzinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200?C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400?C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to OH-terminated surface formation.

Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan)] [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Lee, Dong-Hee [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Sakaguchi, Isao; Haneda, Hajime [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan)] [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)] [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Kamiya, Toshio [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Hosono, Hideo [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

2013-11-11T23:59:59.000Z

78

Effect of oxidizer on grain size and low temperature DC electrical conductivity of tin oxide nanomaterial synthesized by gel combustion method  

SciTech Connect (OSTI)

Nanocrystalline Tin oxide material with different grain size was synthesized using gel combustion method by varying the fuel (C{sub 6}H{sub 8}O{sub 7}) to oxidizer (HNO{sub 3}) molar ratio by keeping the amount of fuel as constant. The prepared samples were characterized by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Analysis X-ray Spectroscopy (EDAX). The effect of fuel to oxidizer molar ratio in the gel combustion method was investigated by inspecting the grain size of nano SnO{sub 2} powder. The grain size was found to be reduced with the amount of oxidizer increases from 0 to 6 moles in the step of 2. The X-ray diffraction patterns of the calcined product showed the formation of high purity tetragonal tin (IV) oxide with the grain size in the range of 12 to 31 nm which was calculated by Scherer's formula. Molar ratio and temperature dependence of DC electrical conductivity of SnO{sub 2} nanomaterial was studied using Keithley source meter. DC electrical conductivity of SnO{sub 2} nanomaterial increases with the temperature from 80K to 300K. From the study it was observed that the DC electrical conductivity of SnO{sub 2} nanomaterial decreases with the grain size at constant temperature.

Rajeeva, M. P., E-mail: jayanna60@gmail.com; Jayanna, H. S., E-mail: jayanna60@gmail.com; Ashok, R. L.; Naveen, C. S. [Department of P.G. Studies and Research in Physics, Kuvempu University, Jnanasahyadri, Shankarghatta, Shimoga- 577451, Karnataka (India); Bothla, V. Prasad [Department of Physics, Indian Institute of Science, Bangalore-560012 (India)

2014-04-24T23:59:59.000Z

79

Electra-optic and all-optical phase modulator on an indium tin oxide single-mode waveguide  

E-Print Network [OSTI]

. Chen and D. Robinson Physica! Optics Corporation, 2.545 West 237th Street, Suite B, Torrance of 15% using 250 mW 355 nm UV light as the activation sources. An 1nzOs:Sn waveguide device workingO, films are widely used in solar energy conversion, in optoelectronics, and in other branches

Chen, Ray

80

Nanoscale Electrical Conductivity and Surface Spectroscopic Studies of Indium-Tin Oxide Yish-Hann Liau and Norbert F. Scherer*  

E-Print Network [OSTI]

enabled the Electronic and optoelectronic devices impact many areas of society, from simple household and optoelectronic devices OCTOBER 2006 | VOLUME 9 | NUMBER 1018 #12;creation of a host of structures with modulated

Scherer, Norbert F.

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Self-organization of a new fluorous porphyrin and C60 films on indium-tin-oxide electrodew  

E-Print Network [OSTI]

10 The porphyrinfullerene com- plexes are appealing as materials for solar-energy conversion and energy storage*ad Received (in Cambridge, UK) 22nd April 2008, Accepted 18th July 2008 First published as an Advance Article of C60 make it an excellent p-acceptor molecule.11 Moreover, because of the small reorganization energy

Liu, Gang-yu

82

Conductive indium-tin oxide nanowire and nanotube arrays made by electrochemically assisted deposition in template membranes: switching  

E-Print Network [OSTI]

for charge transport3 and, in photovoltaic systems, more efficient collection of the photogenerated charge consisted of $25­50 nm in size crystalline grains with the cubic crystal structures of In(OH)3 and In2O3

83

Towards an understanding of light activation processes in titanium oxide based inverted organic solar cells  

E-Print Network [OSTI]

solar cells S. Chambon, E. Destouesse, B. Pavageau, L. Hirsch, and G. Wantz Citation: J. Appl. Phys. 112. Related Articles Power losses in bilayer inverted small molecule organic solar cells Appl. Phys. Lett. 101, 233903 (2012) Thin-film encapsulation of inverted indium-tin-oxide-free polymer solar cells by atomic

Paris-Sud XI, Université de

84

amorphous indium-gallium-zinc oxide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: alloy of composition correspond- ing to the metallic components of the superconduct- ing oxides respectivement. Abstract. - Previous quenching experiments on 2212...

85

Selective Oxidative Degradation of Organic Pollutants by Singlet Oxygen-Mediated Photosensitization: Tin Porphyrin versus C60  

E-Print Network [OSTI]

: Tin Porphyrin versus C60 Aminofullerene Systems Heechan Kim, Wooyul Kim, Yuri Mackeyev, Gi-Seon Lee ABSTRACT: This study evaluates the potential application of tin porphyrin- and C60 aminofullerene

Alvarez, Pedro J.

86

Indium-Vanadium Oxides Deposited by Radio Frequency Sputtering: New Thin Film Transparent  

E-Print Network [OSTI]

in many works, metal/vanadium mixed oxides have favorable properties when used as charge storage, 144 (No. 12), 4099. (2) Opara Krasovec, U.; Orel, B.; Reisfeld, R. Electrochem. Solid- State Let

Artuso, Florinda

87

Lithium intercalation in sputter deposited antimony-doped tin oxide thin films: Evidence from electrochemical and optical measurements  

SciTech Connect (OSTI)

Transparent conducting oxides are used as transparent electrical contacts in a variety of applications, including in electrochromic smart windows. In the present work, we performed a study of transparent conducting antimony-doped tin oxide (ATO) thin films by chronopotentiometry in a Li{sup +}-containing electrolyte. The open circuit potential vs. Li was used to investigate ATO band lineups, such as those of the Fermi level and the ionization potential, as well as the dependence of these lineups on the preparation conditions for ATO. Evidence was found for Li{sup +} intercalation when a current pulse was set in a way so as to drive ions from the electrolyte into the ATO lattice. Galvanostatic intermittent titration was then applied to determine the lithium diffusion coefficient within the ATO lattice. The electrochemical density of states of the conducting oxide was studied by means of the transient voltage recorded during the chronopotentiometry experiments. These measurements were possible because, as Li{sup +} intercalation took place, charge compensating electrons filled the lowest part of the conduction band in ATO. Furthermore, the charge insertion modified the optical properties of ATO according to the Drude model.

Montero, J., E-mail: jose.montero@angstrom.uu.se; Granqvist, C. G.; Niklasson, G. A. [Department of Engineering Sciences, The Angstrm Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden); Guilln, C.; Herrero, J. [Department of Energy, Ciemat, Avda. Complutense 40, Ed. 42, E-28040 Madrid (Spain)

2014-04-21T23:59:59.000Z

88

E-Print Network 3.0 - antimony-doped tin oxide Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: the physical and mechanical properties of silver and antimony doped PbTe thermoelectric materials Implications... catalyst based on palladium on zinc oxide...

89

Nanostructured Tin Dioxide Materials for Gas Sensor Applications  

E-Print Network [OSTI]

CHAPTER 30 Nanostructured Tin Dioxide Materials for Gas Sensor Applications T. A. Miller, S. D) levels for some species. Tin dioxide (also called stannic oxide or tin oxide) semi- conductor gas sensors undergone extensive research and development. Tin dioxide (SnO2) is the most important material for use

Wooldridge, Margaret S.

90

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in  

E-Print Network [OSTI]

-abundant, non-toxic, and air-stable materials represent a promising class of photovoltaic (PV) devices for cost-effective manufacturing. Earth- abundant metal-oxide semiconductors comprise an attractive set of materials for photovoltaic applications, given their auspicious optoelec- tronic properties and chemical

91

Synthesis of transparent conducting oxide coatings  

DOE Patents [OSTI]

A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.

Elam, Jeffrey W.; Martinson, Alex B. F.; Pellin, Michael J.; Hupp, Joseph T.

2010-05-04T23:59:59.000Z

92

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanical Behavior of Indium Nanostructures Mechanical Behavior of Indium Nanostructures Print Wednesday, 26 May 2010 00:00 Indium is a key material in lead-free solder...

93

X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films  

SciTech Connect (OSTI)

We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.

Siah, Sin Cheng, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lee, Sang Woon; Gordon, Roy G. [Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Heo, Jaeyeong [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shibata, Tomohiro; Segre, Carlo U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 606016 (United States)

2014-06-16T23:59:59.000Z

94

TiN for MEMS hotplate heaters J.F. Creemer1  

E-Print Network [OSTI]

TiN for MEMS hotplate heaters J.F. Creemer1 , P.M. Sarro2 , M. Laros2 , H. Schellevis2 , L, DIMES, ECTM, Mekelweg 4, 2628 CD Delft, Netherlands. Summary: Low-stress TiN has been investigated is required to protect the TiN against oxidation. Keywords: TiN thin films, micro heater, hot plate 1

Technische Universiteit Delft

95

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended...

96

In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques  

E-Print Network [OSTI]

-type semiconductor metal oxide that has many applications in various fields due to its special optical, electrical capacity anode for next gen- eration lithium ion batteries.3,4 SnO2 can also be used as a catalyst typically around 10-2 cm. The adsorp- tion of O2 from air removes the electron charge carriers from

George, Steven M.

97

High performance robust F-doped tin oxide based oxygen evolution electro-catalysts for PEM based water electrolysis  

SciTech Connect (OSTI)

Identification and development of non-noble metal based electro-catalysts or electro-catalysts comprising compositions with significantly reduced amounts of expensive noble metal contents (e.g. IrO{sub 2}, Pt) with comparable electrochemical performance to the standard noble metal/metal oxide for proton exchange membrane (PEM) based water electrolysis would signify a major breakthrough in hydrogen generation via water electrolysis. Development of such systems would lead to two primary outcomes: first, a reduction in the overall capital costs of PEM based water electrolyzers, and second, attainment of the targeted hydrogen production costs (<$3.00/gge delivered by 2015) comparable to conventional liquid fuels. In line with these goals, by exploiting a two-pronged theoretical first principles and experimental approach herein, we demonstrate for the very first time a solid solution of SnO{sub 2}:10 wt% F containing only 20 at.% IrO{sub 2} [e.g. (Sn{sub 0.80}Ir{sub 0.20})O{sub 2}:10F] displaying remarkably similar electrochemical activity and comparable or even much improved electrochemical durability compared to pure IrO{sub 2}, the accepted gold standard in oxygen evolution electro-catalysts for PEM based water electrolysis. We present the results of these studies.

Datta, Moni Kanchan; Kadakia, Karan; Velikokhatnyi, Oleg I.; Jampani, Prashanth H.; Chung, Sung Jae; Poston, James A.; Manivannan, Ayyakkannu; Kumta, Prashant N.

2013-01-01T23:59:59.000Z

98

Copper Indium Gallium Diselenide  

Broader source: Energy.gov [DOE]

DOE-sponsored research on copper indium gallium diselenide [Cu(InxGa1-x)Se2], or CIGS, solar cells focuses on developing better film qualities, and thus, higher efficiencies. A list of current...

99

Modeling tin whisker growth.  

SciTech Connect (OSTI)

Tin, lead, and lead-tin solders are the most commonly used solders due to their low melting temperatures. However, due to the toxicity problems, lead must now be removed from solder materials. This has lead to the re-emergence of the issue of tin whisker growth. Tin whiskers are a microelectronic packaging issue because they can lead to shorts if they grow to sufficient length. However, the cause of tin whisker growth is still not well understood and there is lack of robust methods to determine when and if whiskering will be a problem. This report summarizes some of the leading theories on whisker growth and attempts to provide some ideas towards establishing the role microstructure plays in whisker growth.

Weinberger, Christopher Robert

2013-08-01T23:59:59.000Z

100

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films  

DOE Patents [OSTI]

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

2014-11-04T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

A Method to Increase Current Density in a Mono Element Internal Tin Processed Superconductor Utilizing Zr Oxide to Refine Grain Size  

SciTech Connect (OSTI)

The effect of Oxygen on (Nb1Zr)3Sn multifilament conductors manufactured by the Mono Element Internal Tin (MEIT) process was explored to improve the current density by refining the grain size. This followed work first done by General Electric on the Nb3Sn tape process. Techniques to fabricate the more difficult Nb1Zr composites are described and allowed fabrication of long lengths of .254 mm diameter wire from an 88.9 mm diameter billet. Oxygen was incorporated through the use of SnO2 mixed with tin powder and incorporated into the core. These were compared to samples with Ti+Sn and Cu+Sn cores. Heat treatments covered the range of 700 C to 1000 C. Current density vs. H, grain size, and reaction percentages are provided for the materials tested. The Oxygen gave superior results in the temperature range of 815-1000 C. It also stabilized the filament geometry of the array in comparison to the other additions at the higher temperatures. At 815 C a peak in layer Jc yielded values of 2537 A/mm2 at 12 T and 1353 A/mm2 at 15T, 8-22% and 30-73% greater respectively than 700 C values. Results with Oxygen at high temperature show the possibility of high speed continuous reaction of the composite versus the current batch or react in place methods. In general the Ti additions gave superior results at the lower reaction temperature. Future work is suggested to determine if the 815 C reaction temperature can lead to higher current density in high tin (Nb1Zr+Ox)3Sn conductors. A second technique incorporated oxygen directly into the Nb1Zr rods through heat treatment with Nb2O5 at 1100 C for 100 hours in vacuum prior to extrusion. The majority of the filaments reduced properly in the composite but some local variations in hardness led to breakage at smaller diameters.

Bruce A. Zeitlin, Eric Gregory

2008-04-07T23:59:59.000Z

102

JOURNAL DE PHYSIQUE Colloque C6, supplment au no 12, Tome 35, Dcembre 1974,page C6-393 SUPERCONDUCTIVITY AND LATTICE DYNAMICS OF GRANULAR TIN (*)  

E-Print Network [OSTI]

-393 SUPERCONDUCTIVITY AND LATTICE DYNAMICS OF GRANULAR TIN (*) S. AKSELROD, M. PASTERNAK Physics Department, Tel was measured in samples of 4 5 8 Sn grains embedded in a tin-oxide matrix. The Debye temperature of the same

Paris-Sud XI, Universit de

103

INDIUM--1997 37.1 By Robert D. Brown, Jr.  

E-Print Network [OSTI]

INDIUM--1997 37.1 INDIUM By Robert D. Brown, Jr. There was no known production of indium at domestic mines, and none was recovered from ores in the United States in 1997. Domestic indium production and Rhode Island, were the major producers of indium metal and indium products in 1997. Several smaller

104

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray  

E-Print Network [OSTI]

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means (HXPS, HAXPES) is applied to a thick (100 A ) film of a metal gate TiN grown on top of a Si/MoSi2 of TiN, as well as the buried interface between TiN and the native oxide on top of the mirror

Fadley, Charles

105

Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors  

DOE Patents [OSTI]

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

2011-11-15T23:59:59.000Z

106

Sputtering of tin and gallium-tin clusters  

SciTech Connect (OSTI)

Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.

Lill, T.; Calaway, W.F.; Ma, Z.; Pellin, M.J.

1994-08-01T23:59:59.000Z

107

Discovery of the Tin Isotopes  

E-Print Network [OSTI]

Thirty-eight tin isotopes have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

S. Amos; M. Thoennessen

2010-09-08T23:59:59.000Z

108

Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Form (VOSF) and Layered Indium Selenide Thin Film Deposition by Laser Back Ablation. Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film Deposition by...

109

Method of preparing doped oxide catalysts for lean NOx exhaust  

DOE Patents [OSTI]

The lean NOx catalyst includes a substrate, an oxide support material, preferably .gamma.-alumina deposited on the substrate and a metal or metal oxide promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium cerium, and vanadium, and oxides thereof, and any combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between 80 and 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to about 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

Park, Paul W.

2004-03-09T23:59:59.000Z

110

2010 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

portion of global secondary indium was produced from indium-tin oxide (ITO) recycling. Spent ITO target in an acid solution to dissolve the ITO from which the indium is recovered. Indium recovery from tailings be difficult to process. However, improvements to the process technology have made indium recovery from

111

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping the NanoscaleMechanical Behavior of Indium Nanostructures Print

112

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping the NanoscaleMechanical Behavior of Indium Nanostructures

113

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping the NanoscaleMechanical Behavior of Indium

114

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping the NanoscaleMechanical Behavior of IndiumMechanical Behavior of

115

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping the NanoscaleMechanical Behavior of IndiumMechanical Behavior

116

Mechanical Behavior of Indium Nanostructures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping the NanoscaleMechanical Behavior of IndiumMechanical

117

Indium Corporation | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat JumpInc Place: Eden Prairie, MinnesotaIndianapolis Power andAndIndium

118

Part I Taxpayer Identification Number (TIN) Enter your TIN in the appropriate box. The TIN provided must match the name given on the "Name" line  

E-Print Network [OSTI]

Part I Taxpayer Identification Number (TIN) Enter your TIN in the appropriate box. The TIN provided). If you do not have a number, see How to get a TIN on page 3. Social security number Route are not required to sign the certification, but you must provide your correct TIN. See the instructions on page 4

He, Chuan

119

Metal/metal oxide doped oxide catalysts having high deNOx selectivity for lean NOx exhaust aftertreatment systems  

DOE Patents [OSTI]

A lean NOx catalyst and method of preparing the same is disclosed. The lean NOx catalyst includes a ceramic substrate, an oxide support material, preferably .gamma.-alumina, deposited on the substrate and a metal promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium, cerium, vanadium, oxides thereof, and combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between about 80 to 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

Park, Paul W.

2004-03-16T23:59:59.000Z

120

E-Print Network 3.0 - active polymer solids Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Minerals Collection: Materials Science ; Engineering 74 Switchable window based on electrochromic polymers Chunye Xu,a) Summary: design consists of an indium tin oxide (ITO) glass...

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Redox-linked conformation change and electron transfer between...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

undergoes significant conformation change upon interaction with hematite and indium-tin oxide (ITO) surfaces. The apparent adsorption-induced conformation change causes the...

122

Luminescence-Based Spectroelectrochemical Sensor for [Tc(dmpe...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

within a Charge Abstract: A spectroelectrochemical sensor consisting of an indium tin oxide (ITO) optically transparent electrode (OTE) coated with a thin film of sulfonated...

123

Effect of Mn doping on the structural, morphological, optical...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films. Effect of Mn doping on the structural, morphological, optical and magnetic...

124

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting  

SciTech Connect (OSTI)

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology. The primary objective of this project was to develop a commercially viable process for 'Substrates' (Substrate/ undercoat/ TCO topcoat) to be used in production of OLED devices (lamps/luminaries/modules). This project focused on using Arkema's recently developed doped ZnO technology for the Fenestration industry and applying the technology to the OLED lighting industry. The secondary objective was the use of undercoat technology to improve light extraction from the OLED device. In optical fields and window applications, technology has been developed to mitigate reflection losses by selecting appropriate thicknesses and refractive indices of coatings applied either below or above the functional layer of interest. This technology has been proven and implemented in the fenestration industry for more than 15 years. Successful completion of

Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

2011-01-02T23:59:59.000Z

125

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting  

SciTech Connect (OSTI)

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology.

Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sren; Jessen, Frank; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

2011-01-02T23:59:59.000Z

126

TIN--1998 78.1 By James F. Carlin, Jr.  

E-Print Network [OSTI]

to be the world's largest producer of secondary tin. Tin metal recovered from new tinplate scrap and used tin cans from the various scrapped alloys of tin and recycled in those same alloy industries. Secondary tin from%; electrical, 22%; transportation, 13%; construction, 11%; and other, 32%. The estimated value of primary metal

127

Ion emission and expansion in laser-produced tin plasma  

E-Print Network [OSTI]

scale length laser-produced tin plasmas, PhD dissertation,and Expansion in Laser-Produced Tin Plasma A dissertationof a CO 2 laser pulse with tin-based plasma for an extreme

Burdt, Russell Allen

2011-01-01T23:59:59.000Z

128

Thermal Stability of Chelated Indium Activable Tracers  

SciTech Connect (OSTI)

The thermal stability of indium tracer chelated with organic ligands ethylenediaminetetraacetic acid (EDTA) and nitrilotriacetic acid (NTA) was measured for reservoir temperatures of 150, 200, and 240 C. Measurements of the soluble indium concentration was made as a function of time by neutron activation analysis. From the data, approximate thermal decomposition rates were estimated. At 150 C, both chelated tracers were stable over the experimental period of 20 days. At 200 C, the InEDTA concentration remained constant for 16 days, after which the thermal decomposition occurred at a measured rate constant of k = 0.09 d{sup -1}. The thermal decomposition of InNTA at 200 C showed a first order reaction with a measured rate constant of k = 0.16 d{sup -1}. At 240 C, both indium chelated tracers showed rapid decomposition with rate constants greater than 1.8 d{sup -1}. The data indicate that for geothermal reservoir with temperatures up to about 200 C, indium chelated tracers can be used effectively for transit times of at least 20 days. These experiments were run without reservoir rock media, and do not account for concomitant loss of indium tracer by adsorption processes.

Chrysikopoulos, Costas; Kruger, Paul

1986-01-21T23:59:59.000Z

129

Why is Tin so soft?  

E-Print Network [OSTI]

The distribution of isoscalar monopole strength in the neutron-even 112-124Sn-isotopes has been computed using a relativistic random-phase-approximation approach. The accurately-calibrated model used here (``FSUGold'') has been successful in reproducing both ground-state observables as well as collective excitations - including the giant monopole resonance (GMR) in 90Zr, 144Sm, and 208Pb. Yet this same model significantly overestimates the GMR energies in the Sn isotopes. It is argued that the question of ``Why is Tin so soft?'' becomes an important challenge to the field and one that should be answered without sacrificing the success already achieved by several theoretical models.

J. Piekarewicz

2007-05-10T23:59:59.000Z

130

Copper-silver-titanium-tin filler metal for direct brazing of structural ceramics  

DOE Patents [OSTI]

A method of joining ceramics and metals to themselves and to one another at about 800.degree. C. is described using a brazing filler metal consisting essentially of 35 to 50 at. % copper, 40 to 50 at. % silver, 1 to 15 at. % titanium, and 2 to 8 at. % tin. This method produces strong joints that can withstand high service temperatures and oxidizing environments.

Moorhead, Arthur J. (Knoxville, TN)

1988-04-05T23:59:59.000Z

131

Artificial fireball generation via an erosive discharge with tin alloy electrodes  

E-Print Network [OSTI]

We propose a method for generation of long-living autonomous fireball-like objects via a pulse erosive discharge between tin alloy electrodes. The objects are similar to the natural ball lightning in some properties, in particular, they have high energy density and are capable to burn through thin metal foils. The dynamics of the objects are studied using high speed videorecording. During their lifetime the fireballs generate aerogel threads. The studies of their structure by scanning electron microscopy reveal the presence of tin oxide nanoparticles and nanowhiskers.

Pirozerski, A L; Lebedeva, E L; Borisov, B F; Khomutova, A S; Mavlonazarov, I O

2015-01-01T23:59:59.000Z

132

TIN--2002 78.1 By James F. Carlin, Jr.  

E-Print Network [OSTI]

TIN--2002 78.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D, international data coordinator. Tin has not been mined in the United States since 1993; consequently, the country is mostly reliant on imports and recycling for its tin requirements. Twenty-five firms consumed 91

133

TIN--2003 77.1 By James F. Carlin, Jr.  

E-Print Network [OSTI]

TIN--2003 77.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D, international data coordinator. Tin has not been mined in the United States since 1993; consequently, the country is mostly reliant on imports and recycling for its tin needs. Twenty-five firms consumed 80

134

TIN--2000 79.1 By James F. Carlin, Jr.  

E-Print Network [OSTI]

TIN--2000 79.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D, international data coordinator. Tin was not mined in the United States during 2000. Twenty- five firms consumed 86% of reported primary tin used domestically. The major uses were as follows: electrical, 24%; cans

135

TIN--2001 78.1 By James F. Carlin, Jr.  

E-Print Network [OSTI]

TIN--2001 78.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D, international data coordinator. Tin has not been mined in the United States since 1993; consequently firms consumed 83% of the reported primary tin used domestically in 2001. The major uses were as follows

136

TIN--1999 78.1 By James F. Carlin, Jr.  

E-Print Network [OSTI]

of primary metal consumed domestically was about $310 million. Industry stocks remained steady (tables 2 secondary tin was produced from various scrapped alloys of tin and recycled in those same alloy industries. In 1999, however, tin metal recovered from new tinplate scrap and used tin cans was the only type

137

Therapeutic tin-117m compositions  

DOE Patents [OSTI]

The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Mausner, Leonard F. (Stony Brook, NY); Atkins, Harold L. (Setauket, NY)

2003-01-01T23:59:59.000Z

138

(Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S.  

E-Print Network [OSTI]

176 TIN (Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms used about 92% of the primary tin consumed

139

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S.  

E-Print Network [OSTI]

174 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms used about 80% of the primary tin consumed

140

(Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1998, there was no domestic tin mine production. Production of tin at the only U.S.  

E-Print Network [OSTI]

180 TIN (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1998, there was no domestic tin mine production. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms consumed about 85% of the primary tin. The major uses

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

(Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1997, there was no domestic tin mine production. Production of tin at the only  

E-Print Network [OSTI]

178 TIN (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1997, there was no domestic tin mine production. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms consumed about 85% of the primary tin. The major uses

142

(Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1999, there was no domestic tin mine production. Production of tin at the only  

E-Print Network [OSTI]

176 TIN (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1999, there was no domestic tin mine production. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms consumed about 97% of the primary tin. The major uses

143

(Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S.  

E-Print Network [OSTI]

174 TIN (Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: Tin has not been mined domestically since 1993. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms used about 77% of the primary tin consumed

144

(Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1996, there was no domestic tin mine production. Production of tin at the only U.S.  

E-Print Network [OSTI]

178 TIN (Data in metric tons of contained tin, unless otherwise noted) Domestic Production and Use: In 1996, there was no domestic tin mine production. Production of tin at the only U.S. tin smelter, at Texas City, TX, stopped in 1989. Twenty-five firms consumed about 85% of the primary tin. The major uses

145

Tin electroplating/stripping evaluation. Topical report  

SciTech Connect (OSTI)

An evaluation was conducted to determine possible replacement chemistries for electroplating and stripping of tin-lead. The driver for this project was two-fold. Our first goal dealt with hazardous waste reduction. It was desired to eliminate lead (a heavy metal) from the electroplating process and thiourea (a known carcinogen) from the stripping process. We also sought to reduce the cost of nonconformance (CONC) realized by this process in the form of rough plating, broken paths, poor solderability, and overetching. Three suppliers` tin chemistries were evaluated as replacements for electroplating and stripping of tin-lead. Based on preliminary testing, one chemistry was chosen, evaluated, and approved for production use.

McHenry, M.R.

1995-08-01T23:59:59.000Z

146

Infrared Images of Shock-Heated Tin  

SciTech Connect (OSTI)

High-resolution, gated infrared images were taken of tin samples shock heated to just below the 505 K melting point. Sample surfaces were either polished or diamond-turned, with grain sizes ranging from about 0.05 to 10 mm. A high explosive in contact with a 2-mm-thick tin sample induced a peak sample stress of 18 GPa. Interferometer data from similarly-driven tin shots indicate that immediately after shock breakout the samples spall near the free (imaged) surface with a scab thickness of about 0.1 mm.

Craig W. McCluskey; Mark D. Wilke; William D. Turley; Gerald D. Stevens; Lynn R. Veeser; Michael Grover

2004-09-01T23:59:59.000Z

147

Reduction And Stabilization (Immobilization) Of Pertechnetate To An Immobile Reduced Technetium Species Using Tin(II) Apatite  

SciTech Connect (OSTI)

Synthetic tin(II)apatite reduces pertechnetate from the mobile +7 to a non-mobile oxidation state and sequesters the technetium, preventing re-oxidization to mobile +7 state under acidic or oxygenated conditions. Previous work indicated technetium reacted Sn(II)apatite can achieve an ANSI leachability index of 12.8 in Cast Stone. An effect by pH is observed on the distribution coefficient, the highest distribution coefficient being l70,900 observed at pH levels of 2.5 to 10.2. The tin apatite was resistant to releasing technetium under test conditions.

Duncan, J. B.

2012-11-02T23:59:59.000Z

148

Time-resolved visible and extreme ultraviolet spectroscopy of laser-produced tin plasma  

E-Print Network [OSTI]

Characterization of laser-produced tin plasma. Part I: XUVof laser-produced tin plasma. Part II: Radiation-expanding laser-produced tin plasma, Eighth International

O'Shay, Joseph Fred

2007-01-01T23:59:59.000Z

149

Extreme-ultraviolet radiation transport in small scale length laser-produced tin plasmas  

E-Print Network [OSTI]

emissions from laser-produced tin plasmas. Proceedings ofRadiation from Laser- Produced Tin Plasmas. Physical Reviewspectra of xenon and tin discharges. Physical Review E,

Sequoia, Kevin Lamar Williams

2009-01-01T23:59:59.000Z

150

(Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2008. Indium-containing  

E-Print Network [OSTI]

: Data on the quantity of secondary indium recovered from scrap were not available. Indium is most loop--from collection of scrap to production of secondary materials--now takes less than 30 days. ITO to dissolve the ITO, from which the indium is recovered. Indium recovery from tailings was thought to have

151

amorphous indium gallium: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

152

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior  

SciTech Connect (OSTI)

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shivaraman, Ravi; Speck, James S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2014-09-21T23:59:59.000Z

153

Design and fabrication of a tin-sulfide annealing furnace  

E-Print Network [OSTI]

A furnace was designed and its heat transfer properties were analyzed for use in annealing thin-film tins-ulfide solar cells. Tin sulfide has been explored as an earth abundant solar cell material, and the furnace was ...

Lewis, Raymond (Raymond A.)

2011-01-01T23:59:59.000Z

154

T thong tin ve chat lng khong kh trong nha  

E-Print Network [OSTI]

T thong tin ve chat lng khong kh trong nha Chat lng khong kh khong tot trong c song khoe manh. Neu muon biet them thong tin ve chat lng khong kh va sc khoe

155

TIN DOCT 2002 Issue 60 S$5.00 Anniversary  

E-Print Network [OSTI]

TIN DOCT 2002 Issue 60 S$5.00 Anniversary Special Feature- Egypt Calendar The Pyramids The Sphinx Andromeda Aristotle Ancient Greek astronomy #12;TIN D Content Editor: Kepler Letters Consultant: Newton

Aslaksen, Helmer

156

Microwave plasma CVD of NANO structured tin/carbon composites  

DOE Patents [OSTI]

A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

Marcinek, Marek (Warszawa, PL); Kostecki, Robert (Lafayette, CA)

2012-07-17T23:59:59.000Z

157

NISTIR 7078 TIN Techniques for Data Analysis and Surface Construction  

E-Print Network [OSTI]

NISTIR 7078 TIN Techniques for Data Analysis and Surface Construction Building and Fire Research Institute of Standards and Technology #12;NISTIR 7078 TIN Techniques for Data Analysis and Surface This report addresses the task of meshing point clouds by triangulated elevated surfaces referred to as TIN

Bernal, Javier

158

Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films  

DOE Patents [OSTI]

Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

Giolando, Dean M.

2003-09-30T23:59:59.000Z

159

Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnOx, x 02) Particles  

E-Print Network [OSTI]

Engineering, University of Michigan, Ann Arbor, Michigan 48109-2125 Nanocrystalline SnOx particles (x 0 solar cells,9 ­11 liquid crystal displays,10,11 photodetec- tors,6,11 and video touch screens,10 to name

Wooldridge, Margaret S.

160

Microstructural development and mechanical behavior of eutectic bismuth-tin and eutectic indium-tin in response to high temperature deformation  

SciTech Connect (OSTI)

The mechanical behavior and microstructure of eutectic Bi-Sn and In-Sn solders were studied in parallel in order to better understand high temperature deformation of these alloys. Bi-Sn solder joints were made with Cu substrates, and In-Sn joints were made with either Cu or Ni substrates. The as-cast microstructure of Bi-Sn is complex regular, with the two eutectic phases interconnected in complicated patterns. The as-cast microstructure of In-Sn depends on the substrate. In-Sn on Cu has a non-uniform microstructure caused by diffusion of Cu into the solder during sample preparation, with regions of the Sn-rich {gamma} phase imbedded in a matrix of the In-rich {beta} phase. The microstructure of In-Sn on Ni is uniform and lamellar and the two phases are strongly coupled. The solders deform non-uniformly, with deformation concentrating in a band along the length of the sample for Bi-Sn and In-Sn on Cu, though the deformation is more diffuse in In-Sn than in Bi-Sn. Deformation of In-Sn on Ni spreads throughout the width of the joint. The different deformation patterns affect the shape of the stress-strain curves. Stress-strain curves for Bi-Sn and In-Sn on Cu exhibit sharp decays in the engineering stress after reaching a peak. Most of this stress decay is removed for In-Sn on Ni. The creep behavior of In-Sn also depends on the substrate, with the creep deformation controlled by the soft P phase of the eutectic for In-Sn on Cu and controlled by the harder {gamma} phase for In-Sn on Ni. When In-Sn on Ni samples are aged, the microstructure coarsens and changes to an array of {gamma} phase regions in a matrix of the {beta} phase, and the creep behavior changes to resemble that of In-Sn on Cu. The creep behavior of Bi-Sn changes with temperature. Two independent mechanisms operate at lower temperatures, but there is still some question as to whether one or both of these, or a third mechanism, operates at higher temperatures.

Goldstein, J.L.F. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering; [Lawrence Berkeley Lab., CA (United States)

1993-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

The natural and industrial cycling of indium in the environment  

E-Print Network [OSTI]

Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling ...

White, Sarah Jane O'Connell

2012-01-01T23:59:59.000Z

162

Coating Single-Walled Carbon Nanotubes with Tin Oxide  

E-Print Network [OSTI]

, and Pt by electron-beam evaporation or electroless metal deposition.2,5,11 Single amine-functionalized Cd@Rice are used in this work. These SWCNTs are produced by a laser ablation method using nickel as a catalyst

Zettl, Alex

163

Tin oxide nanorods DOI: 10.1002/smll.200500210  

E-Print Network [OSTI]

suggests that the shape and curved tips are important factors in determin- ing the FE properties. Keywords . The effect of shape of SnO2 nanostructures on the field emission proper- ties has been fully investigated. Theoretical calculation has been carried out to find out whether there is a correlation between surface energy

Wang, Zhong L.

164

Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies. Citation: Rajachidambaram MS, A Pandey, S Vilayur Ganapathy, P Nachimuthu, S...

165

Characterization of Amorphous Zinc Tin Oxide Semiconductors. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation SitesStanding FriedelIron-Sulfur3-1 November8-1DerivedfromCu,Region

166

LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia  

E-Print Network [OSTI]

Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase ...

Yong, Foo Nun

2006-01-01T23:59:59.000Z

167

State of the Art Power-in Tube Niobium-Tin Superconductors  

E-Print Network [OSTI]

Development of ECN-type Niobium-Tin wire towards smallerD. Elen, Development of Niobium-Tin conductors at ECN, Adv.Simulations of the effects of tin composition gradients on

Godeke, A.

2011-01-01T23:59:59.000Z

168

DESIGN OF A 10-T SUPERCONDUCTING DIPOLE MAGNET USING NIOBIUM-TIN CONDUCTOR  

E-Print Network [OSTI]

DIPOLE HAGNET USING NIOBIUM-TIN CONOOCTOR' C. Taylor, R.DIPOLE MAGNET USING NIOBIUM-TIN CONDUCTOR C. Taylor, R.slid tooling for the niobium- tin magnet .sre on halld, and

Taylor, C.

2011-01-01T23:59:59.000Z

169

Ambient gas effects on the dynamics of laser-produced tin plume expansion  

E-Print Network [OSTI]

mitigation in a laser-produced tin plasma is one of the mostambient pressure, the tin species with kinetic Downloaded 19Sn + species ejected by the tin plume exhibits a Downloaded

Harilal, S S; O'Shay, B; Tillac, M S; Tao, Y

2006-01-01T23:59:59.000Z

170

Influence of spot size on propagation dynamics of laser-produced tin plasma  

E-Print Network [OSTI]

?Color online? Images of the tin plume recorded with 280 ? mdynamics of laser-produced tin plasma S. S. Harilal a?dynamics of an expanding tin plume for various spot sizes

Harilal, S S

2007-01-01T23:59:59.000Z

171

Measurements of Modulus of Elasticity and Thermal Contraction of Epoxy Impregnated Niobium-Tin and Niobium-Titanium Composites  

E-Print Network [OSTI]

of Epoxy Impregnated Niobium-Tin and Niobium-Titaniumwith epoxy impregnated niobium tin and niobium titanium

Chow, K.P.

2011-01-01T23:59:59.000Z

172

Size-Dependent Detachment-Limited Decay Kinetics of Two-Dimensional TiN Islands on TiN(111)  

E-Print Network [OSTI]

Size-Dependent Detachment-Limited Decay Kinetics of Two-Dimensional TiN Islands on TiN(111) S kinetics of two-dimensional TiN adatom and vacancy islands on atomically smooth TiN(111) terraces. We numbers: 68.35.Md, 68.35.Fx, 68.37.Ef, 82.45.Mp B1-NaCl structure TiN is widely used as a hard wear

Gall, Daniel

173

Spectral Control of Emission from Tin Doped Targets for Extreme Ultraviolet Lithography  

E-Print Network [OSTI]

control of emissions from tin doped targets for extremearray (UTA) emission around 13.5 nm from solid density tinand tin doped foam targets. Extreme ultraviolet (EUV)

2006-01-01T23:59:59.000Z

174

Exhaust Gas Sensor Based On Tin Dioxide For Automotive Application  

E-Print Network [OSTI]

Exhaust Gas Sensor Based On Tin Dioxide For Automotive Application Arthur VALLERON a,b , Christophe, Engineering Materials Department The aim of this paper is to investigate the potentialities of gas sensor based on semi-conductor for exhaust gas automotive application. The sensing element is a tin dioxide

Paris-Sud XI, Université de

175

Molten tin reprocessing of spent nuclear fuel elements  

DOE Patents [OSTI]

A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support the liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

Heckman, Richard A. (Castro Valley, CA)

1983-01-01T23:59:59.000Z

176

E-Print Network 3.0 - active-matrix organic light-emitting Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

24 Room-temperature deposition of thin-film indium tin oxide on micro-fabricated color filters and its application to flat-panel displays Summary: , "Active-Matrix Organic...

177

E-Print Network 3.0 - argon doped sputtered Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

82 Room-temperature deposition of thin-film indium tin oxide on micro-fabricated color filters and its application to flat-panel displays Summary: dc m agnetron sputtering of...

178

Single-Crystalline Branched Zinc Phosphide Nanostructures: Synthesis,  

E-Print Network [OSTI]

optoelectronic devices, including solar cells, flat panel displays, and light emitting diodes (LEDs). Most of the optoelectronic devices having a TC are fabricated on indium tin oxide (ITO) coated substrates because

Wang, Zhong L.

179

E-Print Network 3.0 - atomic oxygen source Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of Chemistry, University of Chicago Collection: Chemistry 2 Indium-tin-oxide thin lm deposited by a dual ion beam assisted e-beam evaporation system Summary: s. Optical...

180

E-Print Network 3.0 - adhesive wear behavior Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4 5 > >> 1 P-7 D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene Summary: studies. Cracking of the ITO layer and adhesive wear failure occurs in the...

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

E-Print Network 3.0 - alcohol composite films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

201 205 Properties of amorphous tin-doped indium oxide thin films Summary: Surface and Coatings Technology 131 2000 201 205204 Fig. 3. Chemical composition of ITO thin films...

182

Modeling stress accelerated grain boundary oxidation (SAGBO) in INCOLOY alloy 908  

E-Print Network [OSTI]

This study explores the possibility of extending the Ph.D. work of Yan Xu on copper-tin alloys (University of Pennsylvania, 1999) to model stress accelerated grain boundary oxidation (SAGBO) in INCOLOY alloy 908. The steady ...

Soontrapa, Chaiyod

2005-01-01T23:59:59.000Z

183

Modeling of EUV Emission and Conversion Efficiency from Laser-Produced Tin Plasmas for Nanolithography  

E-Print Network [OSTI]

Modeling of EUV Emission and Conversion Efficiency from Laser-Produced Tin Plasmas simulation tools. Here, we investigate the radiative properties of tin and tin-doped foam plasmas heated by 1 at intermediate focus (IF). Laser-generated plasmas containing lithium, xenon or tin are potentially good emission

Harilal, S. S.

184

Low-Energy Electron Microscopy Studies of Interlayer Mass Transport Kinetics on TiN(111)  

E-Print Network [OSTI]

Low-Energy Electron Microscopy Studies of Interlayer Mass Transport Kinetics on TiN(111) S annealing of three-dimensional (3D) TiN(111) mounds, consisting of stacked 2D islands, at temperatures-limited decay of 2D TiN islands on atomically-flat TiN(111) terraces [Phys. Rev. Lett. 89 (2002) 176102

Israeli, Navot

185

Interim Results from a Study of the Impacts of Tin (II) Based Mercury Treatment in a Small Stream Ecosystem: Tims Branch, Savannah River Site  

SciTech Connect (OSTI)

A research team is assessing the impacts of an innovative mercury treatment system in Tims Branch, a small southeastern stream. The treatment system, installed in 2007, reduces and removes inorganic mercury from water using tin(II) (stannous) chloride addition followed by air stripping. The system results in discharge of inorganic tin to the ecosystem. This screening study is based on historical information combined with measurements of contaminant concentrations in water, fish, sediment, biofilms and invertebrates. Initial mercury data indicate that first few years of mercury treatment resulted in a significant decrease in mercury concentration in an upper trophic level fish, redfin pickerel, at all sampling locations in the impacted reach. For example, the whole body mercury concentration in redfin pickerel collected from the most impacted pond decreased approximately 72% between 2006 (pre-treatment) and 2010 (post-treatment). Over this same period, mercury concentrations in the fillet of redfin pickerel in this pond were estimated to have decreased from approximately 1.45 {micro}g/g (wet weight basis) to 0.45 {micro}g/g - a decrease from 4.8x to 1.5x the current EPA guideline concentration for mercury in fillet (0.3 {micro}g/g). Thermodynamic modeling, scanning electron microscopy, and other sampling data for tin suggest that particulate tin (IV) oxides are a significant geochemical species entering the ecosystem with elevated levels of tin measured in surficial sediments and biofilms. Detectable increases in tin in sediments and biofilms extended approximately 3km from the discharge location. Tin oxides are recalcitrant solids that are relatively non-toxic and resistant to dissolution. Work continues to develop and validate methods to analyze total tin in the collected biota samples. In general, the interim results of this screening study suggest that the treatment process has performed as predicted and that the concentration of mercury in upper trophic level fish, as a surrogate for all of the underlying transport and transformation processes in a complex ecosystem, has declined as a direct result of the elimination of inorganic mercury inputs. Inorganic tin released to the ecosystem has been found in compartments where particles accumulate with notable levels measured in biofilms.

Looney, Brian [Savannah River National Laboratory (SRNL); BryanJr., Larry [Savannah River Ecology Laboratory; Mathews, Teresa J [ORNL; Peterson, Mark J [ORNL; Roy, W Kelly [ORNL; Jett, Robert T [ORNL; Smith, John G [ORNL

2012-03-01T23:59:59.000Z

186

INDIUM--2001 37.1 By Robert D. Brown, Jr.  

E-Print Network [OSTI]

smelter (Platts Metals Week, 2001c). The indium is contained in the flue dust that had accumulated for more than 50 years, until the smelter's closure in 1981. Shortly after the closure, the U.S. Environmental Protection Agency (EPA), declared the former smelter a Superfund site, under a regulation

187

Antimony-Doped Tin(II) Sulfide Thin Films  

E-Print Network [OSTI]

Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

Chakraborty, Rupak

188

Tin-silver-bismuth solders for electronics assembly  

DOE Patents [OSTI]

A lead-free solder alloy for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218.degree. C. down to about 205.degree. C. depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10.degree. C./min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight).

Vianco, Paul T. (Albuquerque, NM); Rejent, Jerome A. (Albuquerque, NM)

1995-01-01T23:59:59.000Z

189

Tin-silver-bismuth solders for electronics assembly  

DOE Patents [OSTI]

A lead-free solder alloy is disclosed for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218 C down to about 205 C depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10 C/min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight). 4 figs.

Vianco, P.T.; Rejent, J.A.

1995-08-08T23:59:59.000Z

190

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

168 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms accounted for about 90% of the primary tin consumed domestically in 2013. The major uses for tin

191

(Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing  

E-Print Network [OSTI]

of solar power. Research was underway to develop a low-cost manufacturing process for flexible CIGS solar collection of scrap to fabrication of secondary indium products. A recycler may have millions of dollars%. Mainstream LCD devices were also trending toward larger panel sizes, which require more indium per unit

192

Electrodeposition of a nickel-indium alloy from an ammonium citrate electrolyte  

SciTech Connect (OSTI)

The possibility of the electrolytic deposition of a nickel-indium alloy from an ammonium citrate electrolyte for purposes of increasing the cathode current output was investigated. The alloy antifriction coating was deposited in a rectangular glass bath of an electrolyte containing indium in the forms of a sulfate and a hydroxocitrate complex and nickel in the forms of mixed ammonium and citrate complexes as well as in sulfate form. The dependence of indium content and current output of the alloy on current density and indium sulfate concentration in the electrolyte was determined. Polarization curves for alloy precipitation established that indium precipitated at more negative potentials than nickel. The effect of indium content on microhardness was also assessed. An optimum electrolyte composition, pH value, and current density were established.

Vinogradov, S.N.; Perelygin, Yu.P.

1988-05-01T23:59:59.000Z

193

Photoluminescence quenching of tris-(8-hydroxyquinoline) aluminum thin films at interfaces with metal oxide films of different conductivities  

E-Print Network [OSTI]

We report a comprehensive study of photoluminescence (PL) quenching of tris-(8-hydroxyquinoline) aluminum (Alq[subscript ]3) at interfaces with thin films of tin oxide (SnO[subscript 2]) using both steady-state and ...

Mei, Jun

194

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-08-08T23:59:59.000Z

195

Extreme-ultraviolet spectral purity and magnetic ion debris mitigation by use of low-density tin targets  

E-Print Network [OSTI]

The UTA obtained from full density tin and 0.5% Sn density.The UTA spectrum from tin doped foam targets showed distincta) and 0.5 % density (b) tin in the presence and absence of

Harilal, S S; Tillack, Mark S; O'Shay, Beau; Tao, Y; Paguio, R; Nikroo, A

2006-01-01T23:59:59.000Z

196

Analysis of Bulk and Thin Film Model Samples Intended for Investigating the Strain Sensitivity of Niobium-Tin  

E-Print Network [OSTI]

Sensitivity of Niobium-Tin M. G. T. Mentink, A. Anders, D.Sensitivity of NiobiumTin M. G. T. Mentink, A. Anders, M.of the art powder-in-tube niobium-tin superconductors,"

Mentink, M. G. T.

2012-01-01T23:59:59.000Z

197

E-Print Network 3.0 - aluminium gallium indium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

An advanced diffusion model to identify emergent research issues: the case of optoelectronic devices Summary: Aluminium arsenides Ge-Si alloys Avalanche photodiodes Indium...

198

E-Print Network 3.0 - aluminum gallium indium Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics, Portland State University Collection: Physics 2 Alternative Energy Technologies Solar Power Summary: CIGS - Copper - Indium - Gallium - diSelenide Cd-Te -- Cadmium...

199

Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars  

E-Print Network [OSTI]

Nanocrystalline dye-sensitized solar cell/copper indium3, pp. M. Grtzel, Dye-sensitized solar cells, Journal ofefficiency solar cell based on dye- sensitized colloidal

Tu, Bor-An Clayton

2013-01-01T23:59:59.000Z

200

Emission and spectral characteristics of electrodeless indium halide lamp  

SciTech Connect (OSTI)

The electrodeless HID lamp excited by microwave has been intensively investigated because of its long life, high efficacy and environmental aspect. This study reports excellent emission and spectral characteristics of electrodeless HID lamp containing indium halides. The authors investigate InI and InBr as ingredients, and measure the microwave excited spectra and luminous intensities of lamps which are made from spherical silica glass in 10--40 mm outer diameter and with various amounts of halides. It is well known that such indium halides in the usual metal-halide lamps have strong blue line emission at 410 and 451nm. But, in the authors` microwave excited lamps, continuous spectrum can be observed in addition in the visible region. Increasing input of power of microwave makes this continuous spectrum stronger. Below 1kW microwave input power, the spectrum of InBr lamp almost resembled the CIE standard illuminant D65. As a consequence of the spectrum, they found that the color rendering and the duv of InBr lamp were excellent as high as 95 and smaller than 0.002, respectively, in the region of 400--800W input power. The efficacy higher than 100 lm/W was further achieved at 400W. The authors confirm that the microwave excited indium halides lamps can be applicable to many fields of lighting.

Takeda, M.; Hochi, A.; Horii, S.; Matsuoka, T. [Matsushita Electric Industrial Co., Ltd., Kyoto (Japan). Lighting Research Lab.

1997-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

E-Print Network 3.0 - amorphous tin nitride Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TiN, are extensively used as wear... of transition metal nitrides (TiN, NbN) where reduction of the metal is necessary for the nitride formation... Layer Epitaxy in Deposition...

202

Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering Marcel A. Wall, David G. Cahill, I. Petrov, D. Gall, and J. E. Greene  

E-Print Network [OSTI]

Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering Marcel to study the nucleation of homoepitaxial TiN layers grown on TiN(001) by ultrahigh vacuum reactive kinet- ics of TiN, a two-component refractory ceramic, on TiN 001 . TiN, typically deposited by reactive

Gall, Daniel

203

Reductive precipitation of metals photosensitized by tin and antimony porphyrins  

DOE Patents [OSTI]

A method for reducing metals using a tin or antimony porphyrin by forming an aqueous solution of a tin or antimony porphyrin, an electron donor, such as ethylenediaminetetraaceticacid, triethylamine, triethanolamine, and sodium nitrite, and at least one metal compound selected from a uranium-containing compound, a mercury-containing compound, a copper-containing compound, a lead-containing compound, a gold-containing compound, a silver-containing compound, and a platinum-containing compound through irradiating the aqueous solution with light.

Shelnutt, John A.; Gong, Weiliang; Abdelouas, Abdesselam; Lutze, Werner

2003-09-30T23:59:59.000Z

204

Microstructure, residual stress, and fracture of sputtered TiN films Liqiang Zhang a  

E-Print Network [OSTI]

Microstructure, residual stress, and fracture of sputtered TiN films Liqiang Zhang a , Huisheng Keywords: TiN films Residual stress Hardness Fracture toughness Morphology, structure, residual stress, hardness, and fracture toughness of magnetron sputtered titanium nitride (TiN) thin films, deposited at 300

Volinsky, Alex A.

205

-tin ! Imma ! sh Phase Transitions of Germanium Xiao-Jia Chen,1  

E-Print Network [OSTI]

#12;-tin ! Imma ! sh Phase Transitions of Germanium Xiao-Jia Chen,1 Chao Zhang,2 Yue Meng,3 Rui March 2011) New paths were designed for the investigations of the #12;-tin ! Imma ! sh phase transitions in nanocrystalline Ge under conditions of hydrostatic stress. A second-order transition between the #12;-tin and Imma

206

Determination of Tin in Nickel-based Alloys by Electrothermal Laser-excited  

E-Print Network [OSTI]

Determination of Tin in Nickel-based Alloys by Electrothermal Laser-excited Atomic Fluorescence. The determination of tin in nickel-based alloys by laser-excited sampling, has been the most frequently employed technique for the determination of tin in nickel-based alloys.35 The useatomic fluorescence in a graphite

Michel, Robert G.

207

Sputtered TiN films for superconducting coplanar waveguide resonators S. Ohya,1, a)  

E-Print Network [OSTI]

Sputtered TiN films for superconducting coplanar waveguide resonators S. Ohya,1, a) B. Chiaro,2 A of the properties of TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron changes to weak tensile in-plane strain. The TiN films absorb a high concentration of contaminants

Martinis, John M.

208

First-principles calculations of step formation energies and step interactions on TiN(001)  

E-Print Network [OSTI]

First-principles calculations of step formation energies and step interactions on TiN(001) Cristian the formation energies and repulsive interactions of monatomic steps on the TiN(001) surface, using den- sity studies on different aspects related to thin film growth on TiN surfaces, few atomistic studies have been

Ciobanu, Cristian

209

TiN surface dynamics: role of surface and bulk mass transport processes  

E-Print Network [OSTI]

TiN surface dynamics: role of surface and bulk mass transport processes J. Bareoa , S. Kodambakab, USA Abstract. Transition-metal nitrides, such as TiN, have a wide variety of applications as hard/decay kinetics of two- and three-dimensional TiN(111) islands and the effect of surface-terminated dislocations

Khare, Sanjay V.

210

. The tin centre is responsible for the activation of the ketone substrate and  

E-Print Network [OSTI]

procedure3 . The tin centre is responsible for the activation of the ketone substrate and increases catalysts, tin is substituted for some of the silicon or aluminium atoms facing the channel, and so is incorporated into the framework. Tin centres are responsible for the catalytic activity of these materials

Flanagan, Randy

211

Atomic layer deposition of TiN films Growth and electrical behavior down to  

E-Print Network [OSTI]

Atomic layer deposition of TiN films Growth and electrical behavior down to sub-nanometer scale Hao Van Bui #12;ATOMIC LAYER DEPOSITION OF TiN FILMS GROWTH AND ELECTRICAL BEHAVIOR DOWN TO SUBD. Thesis - University of Twente, Enschede, the Netherlands Title: Atomic layer deposition of TiN films

212

Liquid-tin-jet laser-plasma extreme ultraviolet generation P. A. C. Jansson,a)  

E-Print Network [OSTI]

Liquid-tin-jet laser-plasma extreme ultraviolet generation P. A. C. Jansson,a) B. A. M. Hansson, O spectral signatures. The system is demonstrated using tin Sn as the target due to its strong emission materials with new spectral signatures. As an example we use tin, motivated by its current interest for EUV

213

Effect of Plating Variables on Whisker Formation in Pure Tin Films  

E-Print Network [OSTI]

Effect of Plating Variables on Whisker Formation in Pure Tin Films Stephanie Miller Advisors & Materials Engineering, Washington State University Introduction Tin whiskers are single-crystal filaments the effect of plating variables on whisker growth in tin-plated copper samples, with the goal of finding

Collins, Gary S.

214

Diffusion-driven extreme lithium isotopic fractionation in country rocks of the Tin Mountain pegmatite  

E-Print Network [OSTI]

Diffusion-driven extreme lithium isotopic fractionation in country rocks of the Tin Mountain rocks (amphibolites and schists) of the Tin Mountain pegmatite show systematic changes with distance; fluid infiltration; Tin Mountain pegmatite 1. Introduction Lithium is a fluid-mobile, moderately

Mcdonough, William F.

215

Microstructure development in Nb3Sn(Ti) internal tin superconducting wire  

E-Print Network [OSTI]

Microstructure development in Nb3Sn(Ti) internal tin superconducting wire I. Pong S. C. Hopkins have studied the phase formation sequences in a Nb3Sn `internal tin' process superconductor. Heat treatments were performed to convert the starting materials of tin, TiSn, copper and niobium, to bronze

Elliott, James

216

Ordering points for incremental TIN construction from James J. Little and Ping Shi  

E-Print Network [OSTI]

Ordering points for incremental TIN construction from DEMs James J. Little and Ping Shi Department approximations to terrain surfaces (TINs) from dense digital elevation models(DEMs) adds points to an initial in the current TIN, the worst fitting point, in terms of vertical distance, is selected. The order of insertion

Little, Jim

217

Computers & Geosciences 32 (2006) 749766 A simple algorithm for the mapping of TIN data onto a  

E-Print Network [OSTI]

Computers & Geosciences 32 (2006) 749766 A simple algorithm for the mapping of TIN data onto 2005 Abstract Triangulated irregular networks (TIN) in landscape evolution models have the advantage of TIN landscape nodes onto a static grid, facilitating the creation of a fixed stratigraphic record

2006-01-01T23:59:59.000Z

218

Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon  

E-Print Network [OSTI]

Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon H. Wang, A 2001) We investigated mechanical properties of TiN as a function of microstructure varying from nanocrystalline to single crystal TiN films deposited on (100) silicon substrates. By varying the substrate

Wei, Qiuming

219

A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN,,001...  

E-Print Network [OSTI]

A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN,,001... After ,,1... UHV spectra from epitaxial B1-NaCl-structure TiN 001 layers grown on MgO 001 1 1 by ultrahigh vacuum magnetron backscattering spectroscopy RBS . AES spectra were obtained from clean TiN 100 surfaces by cleaving 5- m

Gall, Daniel

220

Interface Stability During Rapid Solidification of Silicon-Tin A thesis presented  

E-Print Network [OSTI]

Interface Stability During Rapid Solidification of Silicon-Tin A thesis presented by David Eric for the experiment were silicon and silicon-on-sapphire (SOS) wafers implanted with tin. The SOS samples were also/s, the interface might undergo breakdown at 0.3 atomic percent tin, resulting in a cellular structure with a cell

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

The Effects of pH Variation on Whisker Growth on Tin Plated Copper  

E-Print Network [OSTI]

The Effects of pH Variation on Whisker Growth on Tin Plated Copper Jeffrey Wu Advisors: Uttara Engineering Introduction: Field Failure Caused by Tin Whisker Short 20 YEARS Whiskers Growing Inside://nepp.nasa.gov/whisker/photos/pom/index.htm) Tin is an element commonly desired to plate on electrical components because of it's corrosion

Collins, Gary S.

222

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

223

Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium  

DOE Patents [OSTI]

Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2000-01-01T23:59:59.000Z

224

Head Knowledge: Summary (Segment from the Tin Shed essay)  

E-Print Network [OSTI]

, a world of objectivity, and his method of deductive logical reasoning, of John Locke (1632-1704) and his and objectification, material reductionism, quantification, gradation and secularization (Frey 1994: 95-104, 123 of reliability and validity (Frey 1994:95-104). While traveling outside the Tin Shed, systematic analysis

O'Laughlin, Jay

225

(Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: In 2001, no tin was mined domestically. Production of tin at the only U.S. tin smelter,  

E-Print Network [OSTI]

,770 6,640 6,800 Shipments from Government stockpile excesses 11,700 12,200 765 12,000 12,000 Consumption: cans and containers, 30%; electrical, 20%; construction, 10%; transportation, 10%; and other, 30: primary metal consumed, $278 million; imports for consumption, refined tin, $326 million; and secondary

226

(Data in metric tons of tin content, unless otherwise noted) Domestic Production and Use: In 2000, no tin was mined domestically. Production of tin at the only U.S. tin  

E-Print Network [OSTI]

,020 6,770 7,000 Shipments from Government stockpile excesses 11,800 11,700 12,200 765 12,000 Consumption: cans and containers, 30%; electrical, 20%; construction, 10%; transportation, 10%; and other, 30: primary metal consumed, $318 million; imports for consumption, refined tin, $391 million; and secondary

227

Methane-assisted combustion synthesis of nanocomposite tin dioxide materials  

E-Print Network [OSTI]

Methane-assisted combustion synthesis of nanocomposite tin dioxide materials S.D. Bakrania *, C and flow conditions using methane as a supplemental fuel. The experiments were carried out at atmospheric-phase precursor for metal additives. In the methane-assisted (MA) system, the inert carrier gas was replaced

Wooldridge, Margaret S.

228

Effect of Capping Agents in Tin Nanoparticles on Electrochemical Cycling  

E-Print Network [OSTI]

on the particle surfaces. The cycling results using coin-type half cells confirmed that the hydrobenzamide, compared with the others. From Fourier transform magnitude FT of Sn LIII-edge energy dispersive X prepared by the decom- position of tin II amides, Sn NMe2 2 2, at 135°C in dry-anisole- produced particles

Cho, Jaephil

229

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

170 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 90% of the primary tin consumed domestically in 2012. The major uses were as follows

230

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

172 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 81% of the primary tin consumed domestically in 2006. The major uses were as follows

231

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

172 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 86% of the primary tin consumed domestically in 2008. The major uses were as follows

232

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

176 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 81% of the primary tin consumed domestically in 2005. The major uses were as follows

233

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

170 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 84% of the primary tin consumed domestically in 2009. The major uses were as follows

234

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

170 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 91% of the primary tin consumed domestically in 2010. The major uses were as follows

235

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

176 TIN (Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989, respectively. Twenty-five firms used about 84% of the primary tin consumed domestically in 2007. The major uses were as follows

236

Synthesis of indium sulphide quantum dots in perfluoronated ionomer membrane  

SciTech Connect (OSTI)

In this paper, we demonstrate a simple and efficient method for synthesis of ?-indium sulphide (In{sub 2}S{sub 3}) nanoparticles embedded in an ionomer matrix (nafion membrane). The influence of reaction temperature on structural, compositional and optical properties of these films were analysed using X-Ray Diffraction, EDAX, UV-Vis absorption spectroscopy and photoluminescence studies. Average particle diameter was estimated using modified effective mass approximation method. Absorption spectra of In{sub 2}S{sub 3} nanoparticles show blue shift compared to bulk In{sub 2}S{sub 3}, indicating strong quantum size confinement effects. PL emission in the wavelength range 530600 nm was recorded using a 488 nm line from an Ar{sup +} laser as the excitation source.

Sumi, R. [Centre for Nanotechnology Research, VIT University, Vellore (India); Warrier, Anita R.; Vijayan, C. [Department of Physics, Indian Institute of Technology, Chennai (India)

2014-01-28T23:59:59.000Z

237

Photoconductivity in reactively evaporated copper indium selenide thin films  

SciTech Connect (OSTI)

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

2014-01-28T23:59:59.000Z

238

MEMS Hotplates with TiN as a Heater Material J.F. Creemer1  

E-Print Network [OSTI]

MEMS Hotplates with TiN as a Heater Material J.F. Creemer1 , W. van der Vlist2 , C.R. de Boer2 , H investigated as a heater material for hotplates and microreactors. TiN is CMOS compatible, and has a higher melting point (2950 C) than conventional heaters of Pt and poly-Si. For the first time, TiN is tested

Technische Universiteit Delft

239

Deposition of TiN and HfO{sub 2} in a commercial 200 mm remote plasma atomic layer deposition reactor  

SciTech Connect (OSTI)

The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL trade mark sign ) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200 mm in diameter. The deposition of titanium nitride (TiN) and hafnium oxide (HfO{sub 2}) is described for the combination of the metal-halide precursor TiCl{sub 4} and H{sub 2}-N{sub 2} plasma and the combination of the metallorganic precursor Hf[N(CH{sub 3})(C{sub 2}H{sub 5})]{sub 4} and O{sub 2} plasma, respectively. The influence of the plasma exposure time and substrate temperature has been studied and compositional, structural, and electrical properties are reported. TiN films with a low Cl impurity content were obtained at 350 deg. C at a growth rate of 0.35 A /cycle with an electrical resistivity as low as 150 {mu}{omega} cm. Carbon-free (detection limit <2 at. %) HfO{sub 2} films were obtained at a growth rate of 1.0 A /cycle at 290 deg. C. The thickness and resisitivity nonuniformity was <5% for the TiN and the thickness uniformality was <2% for the HfO{sub 2} films as determined over 200 mm wafers.

Heil, S. B. S.; Hemmen, J. L. van; Hodson, C. J.; Singh, N.; Klootwijk, J. H.; Roozeboom, F.; Sanden, M. C. M. van de; Kessels, W. M. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Yatton BS49 4AP (United Kingdom); Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); NXP Semiconductors Research, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

2007-09-15T23:59:59.000Z

240

Leaching studies for tin recovery from waste e-scrap  

SciTech Connect (OSTI)

Printed circuit boards (PCBs) are the most essential components of all electrical and electronic equipments, which contain noteworthy quantity of metals, some of which are toxic to life and all of which are valuable resources. Therefore, recycling of PCBs is necessary for the safe disposal/utilization of these metals. Present paper is a part of developing Indo-Korean recycling technique consists of organic swelling pre-treatment technique for the liberation of thin layer of metallic sheet and the treatment of epoxy resin to remove/recover toxic soldering material. To optimize the parameters required for recovery of tin from waste PCBs, initially the bench scale studies were carried out using fresh solder (containing 52.6% Sn and 47.3% Pb) varying the acid concentration, temperature, mixing time and pulp density. The experimental data indicate that 95.79% of tin was leached out from solder material using 5.5 M HCl at fixed pulp density 50 g/L and temperature 90 Degree-Sign C in mixing time 165 min. Kinetic studies followed the chemical reaction controlled dense constant size cylindrical particles with activation energy of 117.68 kJ/mol. However, 97.79% of tin was found to be leached out from solder materials of liberated swelled epoxy resin using 4.5 M HCl at 90 Degree-Sign C, mixing time 60 min and pulp density 50 g/L. From the leach liquor of solder materials of epoxy resin, the precipitate of sodium stannate as value added product was obtained at pH 1.9. The Pb from the leach residue was removed by using 0.1 M nitric acid at 90 Degree-Sign C in mixing time 45 min and pulp density 10 g/L. The metal free epoxy resin could be disposed-of safely/used as filling material without affecting the environment.

Jha, Manis Kumar, E-mail: maniskrjha@gmail.com [Metal Extraction and Forming Division, National Metallurgical Laboratory (NML), Jamshedpur 831 007 (India); Choubey, Pankaj Kumar; Jha, Amrita Kumari; Kumari, Archana [Metal Extraction and Forming Division, National Metallurgical Laboratory (NML), Jamshedpur 831 007 (India); Lee, Jae-chun, E-mail: jclee@kigam.re.kr [Mineral Resources Research Division, Korea Institute of Geosciences and Mineral Resources, Daejeon 305-350 (Korea, Republic of); Kumar, Vinay [Metal Extraction and Forming Division, National Metallurgical Laboratory (NML), Jamshedpur 831 007 (India); Jeong, Jinki [Mineral Resources Research Division, Korea Institute of Geosciences and Mineral Resources, Daejeon 305-350 (Korea, Republic of)

2012-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

(Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2009. Indium-containing  

E-Print Network [OSTI]

global indium consumption. ITO thin-film coatings were primarily used for electrically conductive ITO is deposited as a thin-film coating onto a substrate, is highly inefficient; approximately 30 and the weaker won. In December 2008, China began a 4-year, 13% subsidy program in certain agricultural regions

242

VISUAL WORDS, TEXT ANALYSIS CONCEPTS FOR COMPUTER VISION Wang-Juh Chen, Hoi Tin Kong, Minah Oh,  

E-Print Network [OSTI]

VISUAL WORDS, TEXT ANALYSIS CONCEPTS FOR COMPUTER VISION By Wang-Juh Chen, Hoi Tin Kong, Minah Oh Report: Visual Words, Text Analysis Concepts for Computer Vision Wang-Juh Chen Hoi Tin Kong Minah Oh

243

Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery  

DOE Patents [OSTI]

Disclosed are silicon-tin oxynitride glassy compositions which are especially useful in the construction of anode material for thin-film electrochemical devices including rechargeable lithium-ion batteries, electrochromic mirrors, electrochromic windows, and actuators. Additional applications of silicon-tin oxynitride glassy compositions include optical fibers and optical waveguides.

Neudecker, Bernd J. (Knoxville, TN); Bates, John B. (Oak Ridge, TN)

2001-01-01T23:59:59.000Z

244

Friday, April 13, 2005 Morning Session Chaired by Tin-Yau Tam  

E-Print Network [OSTI]

Friday, April 13, 2005 Morning Session Chaired by Tin-Yau Tam 09:30 10:15 Raymond H. Chan Results on the Drazin Inverse 10:45 11:15 Tin-Yau Tam, Auburn University On Four Sets of Scalars

Li, Chi-Kwong

245

Molten tin reprocessing of spent nuclear fuel elements. [Patent application; continuous process  

DOE Patents [OSTI]

A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support te liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

Heckman, R.A.

1980-12-19T23:59:59.000Z

246

Couplings between dipole and quadrupole vibrations in tin isotopes  

E-Print Network [OSTI]

We study the couplings between collective vibrations such as the isovector giant dipole and isoscalar giant quadrupole resonances in tin isotopes in the framework of the time-dependent Hartree-Fock theory with a Skyrme energy density functional. These couplings are a source of anharmonicity in the multiphonon spectrum. In particular, the residual interaction is known to couple the isovector giant dipole resonance with the isoscalar giant quadrupole resonance built on top of it, inducing a nonlinear evolution of the quadrupole moment after a dipole boost. This coupling also affects the dipole motion in a nucleus with a static or dynamical deformation induced by a quadrupole constraint or boost respectively. Three methods associated with these different manifestations of the coupling are proposed to extract the corresponding matrix elements of the residual interaction. Numerical applications of the different methods to 132Sn are in good agreement with each other. Finally, several tin isotopes are considered to investigate the role of isospin and mass number on this coupling. A simple 1/A dependence of the residual matrix elements is found with no noticeable contribution from the isospin. This result is interpreted within the Goldhaber-Teller model.

Cdric Simenel; Philippe Chomaz

2009-12-11T23:59:59.000Z

247

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2002-01-01T23:59:59.000Z

248

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

249

Abstract--Titanium nitride (TiN) has been investigated as a material for MEMS hotplate heaters operating at high  

E-Print Network [OSTI]

TiN Bond pad TiN Figure 1. Schematic cross section of the hotplate. Titanium Nitride for MEMSAbstract--Titanium nitride (TiN) has been investigated as a material for MEMS hotplate heaters boundaries start to diffuse above one- third of the melting point. As a result, residual stresses relax [3

Technische Universiteit Delft

250

Absolute orientation-dependent TiN(001) step energies from two-dimensional equilibrium island shape and  

E-Print Network [OSTI]

Absolute orientation-dependent TiN(001) step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN(001) layers S. Kodambaka *, S.V. Khare, V. Petrova, A. Vailionis 1 microscopy was used to determine the equilibrium shapes of two-dimensional TiN vacancy islands on atomically

Khare, Sanjay V.

251

Orientation-dependent mobilities from analyses of two-dimensional TiN(111) island decay J. Bareo,1*  

E-Print Network [OSTI]

Orientation-dependent mobilities from analyses of two-dimensional TiN(111) island decay kinetics J (T = 1550-1700 K) low-energy electron microscopy measurements of two-dimensional TiN island coarsening/decay kinetics on TiN(111) terraces for which ( ) values are known [Phys. Rev. B 67 (2003) 35409

Khare, Sanjay V.

252

The effect of axial strain cycling on the critical current density and n-value of ITER niobium-tin  

E-Print Network [OSTI]

The effect of axial strain cycling on the critical current density and n-value of ITER niobium-tin niobium-tin VAC and EM-LMI strands and the detailed characterisation of the EM-LMI-TFMC strand at -0 current density and n-value of two ITER candidate niobium-tin strands (EM- LMI and VAC). The strands were

Hampshire, Damian

253

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar  

E-Print Network [OSTI]

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar Sputter Etched and UPS were used to study epitaxial TiN 001 layers grown in situ which were Ar sputter etched. The films Host Material: epitaxial TiN(001) thin film sputter etched Instrument: Physical Electronics, Inc. 5400

Gall, Daniel

254

Unifying the strain and temperature scaling laws for the pinning force density in superconducting niobium-tin multifilamentary wires  

E-Print Network [OSTI]

niobium-tin multifilamentary wires Najib Cheggoura) and Damian P. Hampshire Superconductivity Group critical current density (Jc) tolerance to strain , performed on a bronze processed niobium-tin . 2 The power m was found to be about 1 for niobium-tin (Nb3Sn) although the power n in the Fietz

Hampshire, Damian

255

arXiv:condmat/0607335 Molecular dynamics of shock fronts and their transitions in Lennard-Jonesium and Tin  

E-Print Network [OSTI]

in Lennard-Jonesium and Tin J. M. D. Lane #3; and M. P. Marder y Center for Nonlinear Dynamics, University for shocks in tin which agrees to within 6% with experimental data. We study the strong shock to elastic-plastic shock transition in tin and #12;nd that it is a continuous transition consistent with a transcritical

Texas at Austin. University of

256

MOSSBAUER STUDIES ON THE STATE OF TIN ATOMS SEGREGATED AT THE GRAIN BOUNDARY OF IRON AND IRON ALLOYS  

E-Print Network [OSTI]

MOSSBAUER STUDIES ON THE STATE OF TIN ATOMS SEGREGATED AT THE GRAIN BOUNDARY OF IRON AND IRON, Tokyo, Japan Abstract.- The binding state of tin atoms segregated at the grain boundary of fine grained state differs considerably from that of solid solution tin even though the average binding force itself

Paris-Sud XI, Universit de

257

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. I. Analysis of  

E-Print Network [OSTI]

Epitaxial TiN,,001... Grown and Analyzed In situ by XPS and UPS. I. Analysis of As-deposited Layers used to characterize as- deposited epitaxial TiN 001 layers grown in situ. The films were deposited, while the UPS data was generated by He I and He II UV radiation. The spectra show that the TiN 001

Gall, Daniel

258

Pathways of atomistic processes on TiN,,001... and ,,111... surfaces during film growth: an ab initio study  

E-Print Network [OSTI]

Pathways of atomistic processes on TiN,,001... and ,,111... surfaces during film growth: an ab used to calculate binding and diffusion energies of adatoms, molecules, and small clusters on TiN 001 and TiN 111 surfaces in order to isolate the key atomistic processes which determine texture evolution

Gall, Daniel

259

Absolute orientation-dependent anisotropic TiN,,111... island step energies and stiffnesses from shape fluctuation analyses  

E-Print Network [OSTI]

Absolute orientation-dependent anisotropic TiN,,111... island step energies and stiffnesses from fluctuations about the anisotropic equilibrium shape of two-dimensional TiN 111 adatom and vacancy islands on atomically smooth TiN 111 terraces. The equilibrium island shape was found to be a truncated hexagon bounded

Khare, Sanjay V.

260

Highly transparent Nb-doped indium oxide electrodes for organic solar cells  

SciTech Connect (OSTI)

The authors investigated the characteristics of Nb-doped In{sub 2}O{sub 3} (INbO) films prepared by co-sputtering of Nb{sub 2}O{sub 5} and In{sub 2}O{sub 3} for use in transparent anodes for organic solar cells (OSCs). To optimize the Nb dopant composition in the In{sub 2}O{sub 3} matrix, the effect of the Nb doping power on the resistivity and transparency of the INbO films were examined. The electronic structure and microstructure of the INbO films were also investigated using synchrotron x-ray absorption spectroscopy and x-ray diffraction examinations in detail. At the optimized Nb co-sputtering power of 30?W, the INbO film exhibited a sheet resistance of 15??/sq, and an optical transmittance of 86.04% at 550?nm, which are highly acceptable for the use as transparent electrodes in the fabrication of OSCs. More importantly, the comparable power conversion efficiency (3.34%) of the OSC with an INbO anode with that (3.31%) of an OSC with a commercial ITO anode indicates that INbO films are promising as a transparent electrode for high performance OSCs.

Kim, Jun Ho; Seong, Tae-Yeon [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Na, Seok-In [Professional Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeongju-si, Jellabuk-do 561-756 (Korea, Republic of); Chung, Kwun-Bum [Department of Physics, Dankook University, Mt. 29, Anseo-Dong, Chenan 330-714 (Korea, Republic of); Lee, Hye-Min; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong, Yongin, Gyeonggi-do 446-701 (Korea, Republic of)

2014-03-15T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique  

SciTech Connect (OSTI)

In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

2011-04-15T23:59:59.000Z

262

Highly efficient blue organic light emitting devices with indium...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

zinc oxide (GZO) uniformly over a 12 diameter area at room temperature on polyethylene terephthalate (PET). During deposition, the system heats to about 60oC due to the...

263

An investigation of the cadmium absorption of resonance neutrons in cadmium covered indium foils  

E-Print Network [OSTI]

, Fcd was measured for indium foils in an isotropic epi-thermal neutron flux. In order to obtain an isotropic epi-thermal neutron flux, a test section was constructed utilizing three 2-curie Pu-Be neutron sources each located at an apex... of resonance neutrons absorbed by the cadmium, thus giving a larger Fcd for the thicker foils. Martin (7), however, measured F d for 29, 69, 88, and 94 mg/cm2 indium foils in graphite and found no such variation. He lists a value of 1. 09 for each foil...

Powell, James Edward

2012-06-07T23:59:59.000Z

264

Effects of anneals in ammonia on the interface trap density near the band edges in 4Hsilicon carbide metal-oxide-semiconductor capacitors  

E-Print Network [OSTI]

­silicon carbide metal-oxide-semiconductor capacitors Gilyong Chung, Chin Che Tin, and John R. Williamsa) Physics. Silicon carbide is the only wide band gap semiconductor that has a native oxide, and metal temperature capacitance­voltage measurements are reported for SiO2/4H­SiC n and p type metal

Pantelides, Sokrates T.

265

A monopole-optimized effective interaction for tin isotopes  

E-Print Network [OSTI]

We present a systematic configuration-interaction shell model calculation on the structure of light tin isotopes with a new global optimized effective interaction. The starting point of the calculation is the realistic CD-Bonn nucleon-nucleon potential. The unknown single-particle energies of the $1d_{3/2}$, $2s_{1/2}$ and $0h_{11/2}$ orbitals and the T=1 monopole interactions are determined by fitting to the binding energies of 157 low-lying yrast states in $^{102-132}$Sn. We apply the Hamiltonian to analyze the origin of the spin inversion between $^{101}$Sn and $^{103}$Sn that was observed recently and to explore the possible contribution from interaction terms beyond the normal pairing.

Chong Qi; Z. X. Xu

2012-10-09T23:59:59.000Z

266

Effective interactions and shell model studies of heavy tin isotopes  

E-Print Network [OSTI]

We present results from large-scale shell-model calculations of even and odd tin isotopes from 134Sn to 142}Sn with a shell-model space defined by the 1f7/2,2p3/2,0h9/2,2p1/2,1f5/2,0i13/2 single-particle orbits. An effective two-body interaction based on modern nucleon-nucleon interactions is employed. The shell-model results are in turn analyzed for their pairing content using a generalized seniority approach. Our results indicate that a pairing-model picture captures a great deal of the structure and the correlations of the lowest lying states for even and odd isotopes.

M. P. Kartamyshev; T. Engeland; M. Hjorth-Jensen; E. Osnes

2006-10-05T23:59:59.000Z

267

Nano Res (2010) 3: 564573564 Uniform, Highly Conductive, and Patterned Transparent Films  

E-Print Network [OSTI]

and Center for Energy Nanoscience and Technology, University of Southern California, Los Angeles, California technique to fabricate silver nanowire films on both rigid and flexible substrates, bringing advantages displays, solar cells, and light emitting diodes [1­3].Doped-metal oxides such as tin-doped indium oxide

Zhou, Chongwu

268

Film Coating Process Research and Characterization of TiN Coated Racetrack-type Ceramic Pipe  

E-Print Network [OSTI]

TiN film was coated on the internal face of racetrack-type ceramic pipe by three different methods: radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of TiN film under different coating methods were compared. According to the AFM, SEM, XPS test results,these properties were analyzed, such as TiN film roughness and surface morphology. At the same time, the deposition rates were studied under two types' cathode, Ti wires and Ti plate. According to the SEM test results, Ti plate cathode can improve the TiN/Ti film deposition rate obviously.

Wang, Jie; Zhang, Bo; Wei, Wei; Fan, Le; Pei, Xiangtao; Hong, Yuanzhi; Wang, Yong

2015-01-01T23:59:59.000Z

269

Simulation studies for Tin Bolometer Array for Neutrinoless Double Beta Decay  

E-Print Network [OSTI]

It is important to identify and reduce the gamma radiation which can be a significant source of background for any double beta decay experiment. The TIN.TIN detector array, which is under development for the search of Neutrinoless Double Beta Decay in $^{124}$Sn, has the potential to utilize the hit multiplicity information to discriminate the gamma background from the events of interest. Monte Carlo simulations for optimizing the design of a Tin detector module has been performed by varying element sizes with an emphasis on the gamma background reduction capabilities of the detector array.

V. Singh; N. Dokania; S. Mathimalar; V. Nanal; R. G. Pillay

2014-08-20T23:59:59.000Z

270

Simulation studies for Tin Bolometer Array for Neutrinoless Double Beta Decay  

E-Print Network [OSTI]

It is important to identify and reduce the gamma radiation which can be a significant source of background for any double beta decay experiment. The TIN.TIN detector array, which is under development for the search of Neutrinoless Double Beta Decay in $^{124}$Sn, has the potential to utilize the hit multiplicity information to discriminate the gamma background from the events of interest. Monte Carlo simulations for optimizing the design of a Tin detector module has been performed by varying element sizes with an emphasis on the gamma background reduction capabilities of the detector array.

Singh, V; Mathimalar, S; Nanal, V; Pillay, R G

2014-01-01T23:59:59.000Z

271

Strain compensation in boron-indium coimplanted laser thermal processed silicon  

E-Print Network [OSTI]

Strain compensation in boron-indium coimplanted laser thermal processed silicon Mark H. Clarka Strain in B-implanted laser thermal processed LTP silicon is reduced by coimplantation of In. Strain in the codoped layer is calculated using lattice constants measured by high-resolution x-ray diffraction

Florida, University of

272

Electrochemical study of the properties of indium in room temperature chloroaluminate molten salts  

SciTech Connect (OSTI)

The electrochemistry of indium was studied with voltammetry and chronoamperometry at glassy carbon, tungsten, and nickel electrodes in the basic and acidic aluminum chloride-1,2-dimethyl-3-propylimidazolium chloride molten salt at 27 C. In the basic melt, In(III) is complexed as [InCl{sub 5}]{sup 2{minus}}, which could be reduced to indium metal through a three-electron reduction process. The electrodeposition of indium on glassy carbon and tungsten electrodes involves progressive three-dimensional nucleation on a finite number of active sites with diffusion-controlled growth of the nuclei. The electrodeposition of indium metal on a nickel electrode entails progressive three-dimensional nucleation on a large number of active sites. The formal potentials of the In(III)/In couple in the 44.4 to 55.6 and 49.0 to 51.0 mole percent (m/o) melts are {minus}1.096 and {minus}1.009 V, respectively, vs. Al(III)Al in the 66.7 to 33.3 m/o.

Liu, J.S.Y.; Sun, I.W. [National Cheng-Kung Univ., Tainan (Taiwan, Province of China). Dept. of Chemistry

1997-01-01T23:59:59.000Z

273

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS Cantilever Resonator  

E-Print Network [OSTI]

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS, Subramaniam Kanakaraju, Neil Goldsman, and Reza Ghodssi Abstract--We report a microelectromechanical system, microelectromechanical system (MEMS) cantilevers, pentacene, IIIV MEMS. I. INTRODUCTION THE NEED to monitor

Rubloff, Gary W.

274

Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 2)/c(8 2) surface by molecular oxygen  

E-Print Network [OSTI]

by molecular oxygen Jonathon B. Clemens a , Sarah R. Bishop a , Darby L. Feldwinn a,1 , Ravi Droopad b,2 simulations Scanning tunneling microscopy Chemisorption Oxidation Indium arsenide Oxygen Semi conducting) surface by molecular oxygen (O2) were studied using scanning tunneling microscopy (STM) and density

Kummel, Andrew C.

275

Three-dimensional defect characterization : focused ion beam tomography applied to tin sulfide thin films  

E-Print Network [OSTI]

Porosity is postulated to be one of the reasons for the low efficiency of tin sulfide-based devices. This work is a preliminary investigation of the effects of two film growth parameters deposition rate and substrate ...

Youssef, Amanda

2014-01-01T23:59:59.000Z

276

Measurement of light capture in solar cells from silver- and tin-plated patterned bus bars  

E-Print Network [OSTI]

Bus bars on solar cells shade silicon from light. When the bus bars are patterned, they can reflect light back onto the silicon using total internal reflection. These patterned bus bars are tin plated and produce 1-2.5% ...

Winiarz, Christine Eve

2007-01-01T23:59:59.000Z

277

Nonadiabatic electron transfer at the nanoscale tin-oxide semiconductor/aqueous solution interface  

E-Print Network [OSTI]

are of considerable interest in the context of dye-sensitized liquid-junction cells for sunlight-to-electrical- energy forward and back electron transfer reactions involving molecular dyes and wide bandgap semiconductors conversion ­ for example, Grätzel cells.1­3 We have examined the kinetics of back electron transfer (b

278

A Spiking Neural Network for Gas Discrimination using a Tin Oxide Sensor Array  

E-Print Network [OSTI]

the molecular acivity into electrical signals. This information converges to a recurrent neural network that the different families of ORNs have broadly overlapping tuning profiles related to the molecular quality [6 Recherche en Informatique et Automatique) and by the French consulate, Procore Grant Ref: F-HK19/05T

Paris-Sud XI, Université de

279

Laser Ablation Synthesis and Electron Transport Studies of Tin Oxide Nanowires**  

E-Print Network [OSTI]

and solar cells.[7±9] In addition, SnO2 thin films have been extensively studied and used as chemical demonstrated to work as sensitive UV and polarized UV detectors. A quartz tube furnace was used for our SnO2 of the furnace, and Si±SiO2 sub- strates covered with 20 nm gold catalytic clusters were placed in the middle

Zhou, Chongwu

280

Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles  

E-Print Network [OSTI]

to pristine freestanding graphene and propose a nanoparticle encapsulation model. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745780] Solar cells utilizing solid-state semiconductor materials. In the past ten years polymer heterojunction solar cells, which use cheaply manufactured organic polymers

Thibado, Paul M.

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Thickness dependent self limiting 1-D tin oxide nanowire arrays by  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability| EMSL Dependency of

282

Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun withconfinementEtching.348 270 300 219 255Retrievals of Temperature

283

One-pot synthesis of highly mesoporous antimony-doped tin oxide from  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas Conchas recoveryLaboratorySpeeding access1 TechnicalOil

284

A high frequency titration of indium with benzenephosphinic acid  

E-Print Network [OSTI]

with ordinary oxidizing agents as hydrogen peroxide and nitric acid. (31) Michaells and Ananoff first reported the preparation and properties of benzenepbosphinic acid in 1874 (25). Kichaells prepared the potassium, barium, calcium, and iron salts... in approximately 25 milliliters of the acid These solutions were heated on a hot plate until dry. The salt was dissolved in dis- tilled water, and diluted to one liter in a volumetric flask. These solutions were standardised volumetrically with EDTA (13...

Keilt, Francis Xavier

1960-01-01T23:59:59.000Z

285

Extended and Revised Analysis of Singly Ionized Tin: Sn II  

E-Print Network [OSTI]

The electronic structure of singly ionized tin (SnII) is partly a one-electron and partly a three-electron system with ground configuration 5s25p. The excited configurations are of the type 5s2nl in the one-electron part, and 5s5p2, 5p3 and 5s5pnl (nl = 6s, 5d) in the three-electron system with quartet and doublet levels. The spectrum analyzed in this work was recorded on a 3 m normal incidence vacuum spectrograph of the Antigonish laboratory (Canada) in the wavelength region 300 - 2080 {\\AA} using a triggered spark source. The existing interpretation of the one-electron level system was confirmed in this paper, while the 2S1/2 level of the 5s5p2 configuration has been revised. The analysis has been extended to include new configurations 5p3, 5s5p5d and 5s5p6s with the aid of superposition-of-configurations Hartree-Fock calculations with relativistic corrections. The ionization potential obtained from the ng series was found to be 118023.7(5) 1/cm (14.63307(6) eV). We give a complete set of critically evaluat...

Haris, K; Tauheed, A

2013-01-01T23:59:59.000Z

286

Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications.  

E-Print Network [OSTI]

??The indium-gallium-nitride on gallium-nitride (InGaN/GaN) materials system is a promising candidate for providing a high intensity, high efficiency solution to the yet unsolved problem of (more)

Anderson, Kathy Perkins Jenkins

2011-01-01T23:59:59.000Z

287

Solder for oxide layer-building metals and alloys  

DOE Patents [OSTI]

A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

1992-01-01T23:59:59.000Z

288

Solder for oxide layer-building metals and alloys  

DOE Patents [OSTI]

A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Kronberg, J.W.

1992-09-15T23:59:59.000Z

289

TIN2 Binds TRF1 and TRF2 Simultaneously and Stabilizes the TRF2 Complex on Telomeres*  

E-Print Network [OSTI]

TIN2 Binds TRF1 and TRF2 Simultaneously and Stabilizes the TRF2 Complex on Telomeres* Received interacting partner, TIN2, as well as PIP1 and POT1 and regulates telomere-length homeo- stasis. The TRF2 that TRF1, TIN2, PIP1, and POT1 are associated with the TRF2-hRap1 complex. Gel filtration identified a TRF

de Lange, Titia

290

Site preferences of indium impurity atoms in intermetallics having Al3Ti and Al3Zr crystal structures  

E-Print Network [OSTI]

Site preferences of indium impurity atoms in intermetallics having Al3Ti and Al3Zr crystal-04843 (Metals Program) and Praveen Sinha Fund for Physics Research. L12 DO22 DO23 Cu3Au Al3Ti Al3Zr #12;Outline · Indium was doped in samples of Al3V and Al3Ti (Al3Ti structure) and Al3Zr (Al3Zr structure) by arc

Collins, Gary S.

291

Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys  

SciTech Connect (OSTI)

Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800?K for the sample with 30% Se content.

Bali, Ashoka; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, Karnataka (India); Wang, Heng; Snyder, G. Jeffrey [Department of Materials Science, California Institute of Technology, Pasadena, California 91125 (United States)

2014-07-21T23:59:59.000Z

292

Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy  

SciTech Connect (OSTI)

We have investigated the formation of titanium nitride (TiN) thin films on (001) MgO substrates by molecular beam epitaxy and radio frequency acitvated nitrogen plasma. Although cubic TiN is stabile over a wide temperature range, superconducting TiN films are exclusively obtained when the substrate temperature exceeds 710 Degree-Sign C. TiN films grown at 720 Degree-Sign C show a high residual resistivity ratio of approximately 11 and the superconducting transition temperature (T{sub c}) is well above 5 K. Superconductivity has been confirmed also by magnetiztion measurements. In addition, we determined the upper critical magnetic field ({mu}{sub 0}H{sub c2}) as well as the corresponding coherence length ({xi}{sub GL}) by transport measurements under high magnetic fields. High-resolution transmission electron microscopy data revealed full in plane coherency to the substrate as well as a low defect density in the film, in agreement with a mean-free path length Script-Small-L Almost-Equal-To 106 nm, which is estimated from the residual resistivity value. The observations of reflection high energy electron diffraction intensity oscillations during the growth, distinct Laue fringes around the main Bragg peaks, and higher order diffraction spots in the reciprocal space map suggest the full controlability of the thickness of high quality superconducting TiN thin films.

Krockenberger, Yoshiharu; Karimoto, Shin-ichi; Yamamoto, Hideki; Semba, Kouich [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

2012-10-15T23:59:59.000Z

293

Broad spectral response photodetector based on individual tin-doped CdS nanowire  

SciTech Connect (OSTI)

High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

Zhou, Weichang, E-mail: wchangzhou@gmail.com, E-mail: dstang@hunnu.edu.cn; Peng, Yuehua; Yin, Yanling; Zhou, Yong; Zhang, Yong; Tang, Dongsheng, E-mail: wchangzhou@gmail.com, E-mail: dstang@hunnu.edu.cn [Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081 (China)

2014-12-15T23:59:59.000Z

294

Release Path Temperatures of Shock-Compressed Tin from Dynamic Reflectance and Radiance Measurements  

SciTech Connect (OSTI)

Dynamic reflectance and radiance measurements were conducted for tin samples shock compressed to 35 GPa and released to 15 GPa using high explosives. We determined the reflectance of the tin samples glued to lithium fluoride windows using an integrating sphere with an internal xenon flashlamp as an illumination source. The dynamic reflectance (R) was determined at near normal incidence in four spectral bands with coverage in visible and near-infrared spectra. Uncertainties in R/R0 are < 2%, and uncertainties in absolute reflectance are < 5%. In complementary experiments, thermal radiance from the tin/glue/lithium fluoride interface was recorded with similar shock stress and spectral coverage as the reflectance measurements. The two sets of experiments were combined to obtain the temperature history of the tin surface with an uncertainty of < 2%. The stress at the interface was determined from photonic Doppler velocimetry and combined with the temperatures to obtain temperature-stress release paths for tin. We discuss the relationship between the experimental release paths and release isentropes that begin on the principal shock Hugoniot.

La Lone, B. M. [NSTec; Stevens, G. D. [NSTec; Turley, W. D. [NSTec; Holtkamp, D. B. [LANL; Iverson, A. J. [NSTec; Hixson, R. S. [NSTec; Veeser, L. R. [NSTec

2013-08-01T23:59:59.000Z

295

Indium diffusion through high-k dielectrics in high-k/InP stacks  

SciTech Connect (OSTI)

Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Galatage, R. V. [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-08-05T23:59:59.000Z

296

Tin(II) alkoxide hydrolysis products for use as base catalysts  

DOE Patents [OSTI]

Tin alkoxide compounds are provided with accessible electrons. The compounds are a polymeric tin alkoxide, [Sn(OCH.sub.2 C(CH.sub.3).sub.3).sub.2 ].sub.n, and the hydrolysis products Sn.sub.6 O.sub.4 (OCH.sub.2 C(CH.sub.3).sub.3).sub.4 and Sn.sub.5 O.sub.2 (OCH.sub.2 C(CH.sub.3).sub.3).sub.6. The hydrolysis products are formed by hydrolyzing the [Sn(OCH.sub.2 C(CH.sub.3).sub.3).sub.2 ].sub.n in a solvent with controlled amounts of water, between 0.1 and 2 moles of water per mole of the polymeric tin alkoxide.

Boyle, Timothy J. (Albuquerque, NM)

2002-01-01T23:59:59.000Z

297

Tin-117m-labeled stannic (Sn.sup.4+) chelates  

DOE Patents [OSTI]

The radiopharmaceutical reagents of this invention and the class of Tin-117m radiopharmaceuticals are therapeutic and diagnostic agents that incorporate gamma-emitting nuclides that localize in bone after intravenous injection in mammals (mice, rats, dogs, and rabbits). Images reflecting bone structure or function can then be obtained by a scintillation camera that detects the distribution of ionizing radiation emitted by the radioactive agent. Tin-117m-labeled chelates of stannic tin localize almost exclusively in cortical bone. Upon intravenous injection of the reagent, the preferred chelates are phosphonate compounds, preferable, PYP, MDP, EHDP, and DTPA. This class of reagents is therapeutically and diagnostically useful in skeletal scintigraphy and for the radiotherapy of bone tumors and other disorders.

Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Richards, Powell (Bayport, NY)

1985-01-01T23:59:59.000Z

298

State of the Art Power-in Tube Niobium-Tin Superconductors  

SciTech Connect (OSTI)

Powder-in-Tube (PIT) processed Niobium-Tin wires are commercially manufactured for nearly three decades and have demonstrated a combination of very high current density (presently up to 2500 A mm{sup -2} non-Cu at 12 T and 4.2 K) with fine (35 {micro}m), well separated filaments. We review the developments that have led to the present state of the art PIT Niobium-Tin wires, discuss the wire manufacturing and A15 formation processes, and describe typical superconducting performance in relation to magnetic field and strain. We further highlight successful applications of PIT wires and conclude with an outlook on possibilities for further improvements in the performance of PIT Niobium-Tin wires.

Godeke, A.; Ouden, A. Den; Nijhuis, A.; ten Kate, H.H.J.

2008-06-01T23:59:59.000Z

299

EMSL - oxides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

oxides en Influence of Adsorption Site and Wavelength on the Photodesorption of NO from the (Fe,Cr)3O4(111) Mixed Oxide Surface. http:www.emsl.pnl.govemslwebpublications...

300

Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001) J. S. Chawla, X. Y. Zhang, and D. Galla)  

E-Print Network [OSTI]

Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001) J. S. Chawla, X. Y.5-nm-thick TiN(001) buffer layer. X-ray diffraction and reflection indicate that the TiN(001) surface continuous Cu layer on MgO. The wet- ting of Cu on TiN is expected to be better, due to the surface energy

Gall, Daniel

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

714 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 38, NO. 4, APRIL 2010 Interaction of a CO2 Laser Pulse With Tin-Based  

E-Print Network [OSTI]

Pulse With Tin-Based Plasma for an Extreme Ultraviolet Lithography Source Yezheng Tao, Mark S. Tillack

Najmabadi, Farrokh

302

Process for light-driven hydrocarbon oxidation at ambient temperatures  

DOE Patents [OSTI]

A photochemical reaction for the oxidation of hydrocarbons uses molecular oxygen as the oxidant. A reductive photoredox cycle that uses a tin(IV)- or antimony(V)-porphyrin photosensitizer generates the reducing equivalents required to activate oxygen. This artificial photosynthesis system drives a catalytic cycle, which mimics the cytochrome P.sub.450 reaction, to oxidize hydrocarbons. An iron(III)- or manganese(III)-porphyrin is used as the hydrocarbon-oxidation catalyst. Methylviologen can be used as a redox relay molecule to provide for electron-transfer from the reduced photosensitizer to the Fe or Mn porphyrin. The system is long-lived and may be used in photo-initiated spectroscopic studies of the reaction to determine reaction rates and intermediates.

Shelnutt, John A. (Tijeras, NM)

1990-01-01T23:59:59.000Z

303

Tridentate ligated heteronuclear tin(II) alkoxides for use as base catalysts  

DOE Patents [OSTI]

Tin alkoxide compounds are provided with accessible electrons. The tin alkoxide compound have the general formula (THME).sub.2 Sn.sub.3 (M(L).sub.x).sub.y, where THME is (O--CH.sub.2).sub.3 C(CH.sub.3), M is a metal atom selected from Sn and Ti, L is an organic/inorganic ligand selected from an alkoxide, a phenoxide or an amide, x is selected from 2 and 4 and y is selected from 0 and 1. These compounds have applicability as base catalysts in reactions and in metal-organic chemical vapor depositions processes.

Boyle, Timothy J. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

304

Radial Electron Collection in Dye-Sensitized Solar Cells  

E-Print Network [OSTI]

Radial Electron Collection in Dye-Sensitized Solar Cells Alex B. F. Martinson,, Jeffrey W. Elam photoelectrode architecture consisting of concentric conducting and semiconducting nanotubes for use in dye-sensitized solar cells (DSSCs). Atomic layer deposition is employed to grow indium tin oxide (ITO) within a porous

305

Published: April 21, 2011 r 2011 American Chemical Society 8956 dx.doi.org/10.1021/ja201129n |J. Am. Chem. Soc. 2011, 133, 89568960  

E-Print Network [OSTI]

" electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is known of such films. The impact of this study on the future development of optoelectronic devices is discussed. I. Introduction Tin-doped indium oxide (ITO) is routinely used as an electrode in various optoelectronic devices

Ismagilov, Rustem F.

306

Atmospheric pressure intercalation of oxygen via wrinkles between graphene and a metal  

E-Print Network [OSTI]

Atmospheric pressure intercalation of oxygen via wrinkles between graphene and a metal Amina with graphene, an atomically thin sheet of carbon atoms in a honeycomb lattice. These prospects are urging, has reached such maturity that graphene now appears as an alternative to indium tin oxide

Paris-Sud XI, Universit de

307

Ris-R-1140(EN) Deposition of ITO and AZO thin  

E-Print Network [OSTI]

seen through vacuum window during film deposition. The plasma is the elongated bright area in the blue atmospheres 51 5.1 Indium tin oxide 51 5.1.1 Crystal structure 51 5.1.2 Band structure 52 5.1.3 Conductivity

308

PHOTOELECTROCHEMICAL HYDROGEN PRODUCTION Eric Miller and Richard Rocheleau  

E-Print Network [OSTI]

(indium-tin-oxide), and polymer-encapsulation films deposited at the University of Hawaii. The a-Si solar these catalytic coatings, solar-to-hydrogen efficiencies of 6% to 8% were expected for the a-Si based-stacks was reduced from 1.8 V to below 1 V, making water-splitting impossible, despite predicted solar

309

Revised September 2013 JAMES R. SITES  

E-Print Network [OSTI]

Executive Committee (1982-84, 1988-1989) Council for Photovoltaic Research (1999-present), Executive. The Colorado State photovoltaics program began with the development of indium­ tin­oxide solar cells, and it has emphasized the device physics of low­cost polycrystalline thin-film solar cells. Its goals

Sites, James R.

310

DETERMINATION OF THE SURFACE COMPOSITION OF BINARY ALLOYS BY AUGER ELECTRON SPECTROSCOPY: THE GOLD-SILVER AND GOLD-TIN SYSTEMS  

E-Print Network [OSTI]

THE GOLD-SILVER AND GOLD-TIN SYSTEMS Steven Henry Overbury (GOLD-SILVER lu"JD GOLD-TIN SYSTEl1S Steven Henry Overburyat % Au,113 WEIGHT PERCENT TIN I I I I 133G. [5~ II I T L I

Overbury, S.H.

2010-01-01T23:59:59.000Z

311

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering M. A. Auger,1,5 L. Vzquez,1,  

E-Print Network [OSTI]

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering M. A. Auger,1 manuscript received 1 December 2005; published 31 January 2006 We study surface kinetic roughening of TiN. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening

Cuerno, Rodolfo

312

arXiv:cond-mat/0607335v113Jul2006 Molecular dynamics of shock fronts and their transitions in Lennard-Jonesium and Tin  

E-Print Network [OSTI]

in Lennard-Jonesium and Tin J. M. D. Lane and M. P. Marder Center for Nonlinear Dynamics, University of Texas for shocks in tin which agrees to within 6% with experimental data. We study the strong shock to elastic-plastic shock transition in tin and find that it is a continuous transition consistent with a transcritical

Texas at Austin. University of

313

Selective etching of TiN over TaN and vice versa in chlorine-containing Hyungjoo Shin,a)  

E-Print Network [OSTI]

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas Hyungjoo Shin 1 April 2013; published 18 April 2013) Selectivity of etching between physical vapor-deposited TiN selectivity of etching TiN over TaN by adding small amounts (

Economou, Demetre J.

314

(Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

315

INTERIM RESULTS FROM A STUDY OF THE IMPACTS OF TIN(II) BASED MERCURY TREATMENT IN A SMALL STREAM ECOSYSTEM: TIMS BRANCH, SAVANNAH RIVER SITE  

SciTech Connect (OSTI)

Mercury (Hg) has been identified as a 'persistent, bioaccumulative and toxic' pollutant with widespread impacts throughout North America and the world (EPA. 1997a, 1997b, 1998a, 1998b, 2000). Although most of the mercury in the environment is inorganic Hg, a small proportion of total Hg is transformed through the actions of aquatic microbes into methylmercury (MeHg). In contrast to virtually all other metals, MeHg biomagnifies or becomes increasingly concentrated as it is transferred through aquatic food chains so that the consumption of mercury contaminated fish is the primary route of this toxin to humans. For this reason, the ambient water quality criterion (AWQC) for mercury is based on a fish tissue endpoint rather than an aqueous Hg concentration, as the tissue concentration (e.g., < 0.3 {mu}g/g fillet) is considered to be a more consistent indicator of exposure and risk (EPA, 2001). Effective mercury remediation at point-source contaminated sites requires an understanding of the nature and magnitude of mercury inputs, and also knowledge of how these inputs must be controlled in order to achieve the desired reduction of mercury contamination in biota necessary for compliance with AWQC targets. One of the challenges to remediation is that mercury body burdens in fish are more closely linked to aqueous MeHg than to inorganic Hg concentrations (Sveinsdottir and Mason 2005), but MeHg production is not easily predicted or controlled. At point-source contaminated sites, mercury methylation is not only affected by the absolute mercury load, but also by the form of mercury loaded. In addition, once MeHg is formed, the hydrology, trophic structure, and water chemistry of a given system affect how it is transformed and transferred through the food chain to fish. Decreasing inorganic Hg concentrations and loading may often therefore be a more achievable remediation goal, but has led to mixed results in terms of responses in fish bioaccumulation. A number of source control measures have resulted in rapid responses in lake or reservoir fisheries (Joslin 1994, Turner and Southworth 1999; Orihel et al., 2007), but examples of similar responses in Hg-contaminated stream ecosystems are less common. Recent work suggests that stream systems may actually be more susceptible to mercury bioaccumulation than lakes, highlighting the need to better understand the ecological drivers of mercury bioaccumulation in stream-dwelling fish (Chasar et al. 2009, Ward et al. 2010). In the present study we examine the response of fish to remedial actions in Tims Branch, a point-source contaminated stream on the Department of Energy's (DOE) Savannah River Site in Aiken, South Carolina. This second order stream received inorganic mercury inputs at its headwaters from the 1950s-2000s which contaminated the water, sediments, and biota downstream. In 2007, an innovative mercury removal system using tin (II) chloride (stannous chloride, SnCl{sub 2}) was implemented at a pre-existing air stripper. Tin(II) reduces dissolved Hg (II) to Hg (0), which is removed by the air stripper. During this process, tin(II) is oxidized to tin (IV) which is expected to precipitate as colloidal tin(IV) oxides and hydroxides, particulate materials with relatively low toxicity (Hallas and Cooney, 1981, EPA 2002, ATSDR, 2005). The objectives of the present research are to provide an initial assessment of the net impacts of the tin(II) based mercury treatment on key biota and to document the distribution and fate of inorganic tin in this small stream ecosystem after the first several years of operating a full scale system. To support these objectives, we collected fish, sediment, water, invertebrates, and biofilm samples from Tims Branch to quantify the general behavior and accumulation patterns for mercury and tin in the ecosystem and to determine if the treatment process has resulted in: (1) a measurable beneficial impact on (i.e., decrease of) mercury concentration in upper trophic level fish and other biota; this is a key environmental endpoint since reducing mercury concen

Looney, B.; Bryan, L.; Mathews, T.

2012-03-30T23:59:59.000Z

316

(Data in metric tons, unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2003. Two companies,  

E-Print Network [OSTI]

with the curtailment of primary refining capacity have added an extra incentive to the recovery of secondary indium be compared with Japan where the decline in domestic zinc refining has stimulated an aggressive recycling in the world economy. The report of reduced production from mines that produce byproduct indium had a negative

317

DFTand k.p modellingof the phase transitions of lead and tin halideperovskites for photovoltaic cells  

E-Print Network [OSTI]

DFTand k.p modellingof the phase transitions of lead and tin halideperovskites for photovoltaic Rennes, UMR 6226, 35042 Rennes, France KeywordsPerovskite, photovoltaic, first-principles calculations, k these hybrid semiconductor photovoltaic cells(HSPC) maydiffer from the one of dye-sensitized solar cells (DSSC

Paris-Sud XI, Université de

318

Collapse of superconductivity in a hybrid tin-graphene Josephson junction array  

E-Print Network [OSTI]

1 Collapse of superconductivity in a hybrid tin-graphene Josephson junction array Zheng Han1 of the Josephson junction array into a zero-temperature metallic state. The suppression of proximity, models involving specific types of Josephson junction arrays in which superconducting disks are coupled

Boyer, Edmond

319

Spectroscopic characterization of laser-induced tin plasma S. S. Harilal,a  

E-Print Network [OSTI]

to convert Nd:YAG yttrium aluminum gar- net radiation to 13.5-nm EUV radiation, achieving over 2% conversion and magnetic field13 on an expanding, laser-produced plasma. Most of the previous studies of fully dense tin

Harilal, S. S.

320

Influence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmas  

E-Print Network [OSTI]

studies showed that the EUV/x-ray emission from laser-heated clusters are strong function of laser pulseInfluence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmasLASE Project, Department of Diode-Pumped Lasers, Institute of Physics of the ASCR, Na Slovance 2, 18221 Prague

Harilal, S. S.

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Ambient gas effects on the dynamics of laser-produced tin plume expansion  

E-Print Network [OSTI]

Ambient gas effects on the dynamics of laser-produced tin plume expansion S. S. Harilal,a Beau O in the development of an extreme ultraviolet lithographic light source. An ambient gas that is transparent to 13.5 nm and deceleration of plume species, the addition of ambient gas leads to other events such as double peak formation

Tillack, Mark

322

Annealing behavior of the hydrogen-vacancy complex in bulk indium phosphide crystals  

SciTech Connect (OSTI)

In order to explain the effects of hydrogen on the electrical properties of bulk indium phosphide crystals, they have performed a series of high temperature annealing studies with both undoped and iron-doped indium phosphide crystals. The samples were annealed at 900 C for 6, 36, and 72 hours, respectively, under a phosphorus overpressure of five atmospheres. Samples were characterized at 10 K by Fourier transform infrared absorption spectroscopy which allowed us to measure the concentrations of both the Fe{sup 2+} and V{sub In}-H{sub 4} defects simultaneously. Undoped samples were further characterized by the Hall effect measurements. The authors find in the iron-doped samples that the [Fe{sup 2+}]/[Fe{sup 3+}] ratio decreases gradually with increasing annealing time, indicating a reduction in the number of donors in the samples. In the undoped samples, annealing leads to a reduction of the free electron concentration accompanied by an increase in the 77 K mobility. The increase of the sample`s mobility eliminates the possibility that the reduction of the free electron concentration is due to an increase in the concentration of the compensating acceptors. The explanation for the observed behavior in all samples is that hydrogen acts as a donor and it diffuses out of the crystal during the annealing process. Based on the experimental data, they propose a calibration equation of [V{sub In}-H{sub 4}] = 4.2 {times} 10{sup 16} cm{sup {minus}1} {times} Absorbance (cm{sup {minus}1}) which is used to correlate the hydrogen-vacancy complex concentrations with the changes of the V{sub In}-H{sub 4} absorption peak in both the iron-doped and the undoped samples. Their results confirm the donor nature of the hydrogen-vacancy complex and provide strong evidence regarding the reduction mechanism of free carrier concentrations in bulk indium phosphide crystals during high temperature annealing under a phosphorus atmosphere.

Ye, Q.; Wolk, J.A.; Bourret-Courchesne, E.D. [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.; Bliss, D.F. [Air Force Rome Lab., Hanscom AFB, MA (United States)

1998-12-31T23:59:59.000Z

323

Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface  

SciTech Connect (OSTI)

Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu-O bonds, whereby the diffusion of La was found to be less important.

Nichau, A.; Schnee, M.; Schubert, J.; Bernardy, P.; Hollaender, B.; Buca, D.; Mantl, S. [Peter Gruenberg Institute 9 (PGI9-IT), Forschungszentrum Juelich, 52425 Juelich (Germany); JARA-Fundamentals of Future Information Technologies, 52425 Juelich (Germany); Besmehn, A.; Breuer, U. [Central Division for Chemical Analysis (ZCH), Forschungszentrum Juelich, 52425 Juelich (Germany); Rubio-Zuazo, J.; Castro, G. R. [Spanish CRG BM25 Beamline-SpLine, European Synchrotron Radiation Facility (ESRF), Rue Jules Horowitz BP 220, F-38043 Grenoble, Cedex 09 (France); Muecklich, A.; Borany, J. von [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum' Dresden-Rossendorf e.V., 01314 Dresden (Germany)

2013-04-21T23:59:59.000Z

324

JOURNAL DE PHYSIQUE Colloque C4, supplkment au no 5, Tome 35, Mai 1974,page C4-75 ON THE CPA IN A MUFFIN-TIN MODEL POTENTIAL  

E-Print Network [OSTI]

IN A MUFFIN-TIN MODEL POTENTIAL THEORY OF RANDOM SUBSTITUTIONAL ALLOYS B. L. GYORFFY and G. M. STOCKS HH Wills se simplifient pour des puits de potentiel muffin-tin sans recouvrement, et nous pourrons deriver une scattering amplitude t;(&)in the CPA for non-overlapping muffin-tin potential wells is simplified and a new

Paris-Sud XI, Universit de

325

JOURNAL DE PHYSIQUE Colloque C6, supplkment au no 12, Tome 37, DPcembre 1976,page C6-897 M~SSBAUERSTUDIES OF' lZ9IATOMS IMPLANTED IN a-AND fl-TIN  

E-Print Network [OSTI]

~SSBAUERSTUDIES OF' lZ9IATOMS IMPLANTED IN a- AND fl-TIN H. DE WAARD and G. J. KEMERINK Laboratorium voor Algemene on the basis of a simple model. Implants of 1291 in /3 tin yield two line spectra identicalto those found for implants in a tin converted to /3 tin by heating. Repeated phase transitions show that the impurity

Paris-Sud XI, Universit de

326

Alternating layers of plutonium and lead or indium as surrogate for plutonium  

SciTech Connect (OSTI)

Elemental plutonium (Pu) assumes more crystal structures than other elements, plausibly due to bonding f electrons becoming non-bonding. Complex geometries hamper understanding of the transition in Pu, but calculations predict this transition in a system with simpler geometry: alternating layers either of plutonium and lead or of plutonium and indium. Here the transition occurs via a pairing-up of atoms within Pu layers. Calculations stepping through this pairing-up reveal valuable details of the transition, for example that the transition from bonding to non-bonding proceeds smoothly.

Rudin, Sven Peter [Los Alamos National Laboratory

2009-01-01T23:59:59.000Z

327

Method of making a catalytic metal oxide selective for the conversion of a gas and a coating system for the selective oxidation of hydrocarbons and carbon monoxide  

SciTech Connect (OSTI)

A method is described of making a catalytic metal oxide selective to catalyzing the conversion of given gas species, comprising: intimately supporting a solid film of catalytic metal oxide on an electrically conducting material, said film having an exposed outer surface spaced no greater than 1,000 angstroms from said conducting material and said conducting material being matched to the composition of said oxide to change the electron state of the exposed outer surface to promote a reaction between given gas species and said oxide, said metal oxide being selected from the group consisting of TiO[sub 2], SnO[sub 2], FeO, SrTiO[sub 3], and CoO, and said conducting material being selected from the group consisting of Au, Pt, TiN, Pd, Rh, Ni, and Co.

Logothetis, E.M.; Soltis, R.E.

1993-07-20T23:59:59.000Z

328

Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets  

DOE Patents [OSTI]

The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

Lapshina, Elena V. (Troitsk, RU); Zhuikov, Boris L. (Troitsk, RU); Srivastava, Suresh C. (Setauket, NY); Ermolaev, Stanislav V. (Obninsk, RU); Togaeva, Natalia R. (Obninsk, RU)

2012-01-17T23:59:59.000Z

329

Symmetry Energy and the Isoscaling in Reactions on Enriched Tin Isotopes  

E-Print Network [OSTI]

The coefficients of symmetry energy term for fragments with Z=4,11,12 measured in multifragmentation reactions initiated by proton and deuteron with energy of 3.65A GeV on enriched tin isotopes 112,118,120,124Sn are determined. The dependence of isoscaling parameter on the excitation energy, the temperature of fragmenting systems and the density ratio for heavy mass products are analised.

A. S. Danagulyan; A. R. Balabekyan; G. H. Hovhannisyan

2009-02-17T23:59:59.000Z

330

Leaching of indium from obsolete liquid crystal displays: Comparing grinding with electrical disintegration in context of LCA  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Two pre-treatment methods, prior to leaching of indium from obsolete LCD modules, were described. Black-Right-Pointing-Pointer Conventional grinding and electrical disintegration have been evaluated and compared in the context of LCA. Black-Right-Pointing-Pointer Experimental data on the leaching capacity for indium and the electricity consumption of equipment were inputted into the LCA model in order to compare the environmental performance of each method. Black-Right-Pointing-Pointer An estimate for the environmental performance was calculated as the sum of six impact categories. Black-Right-Pointing-Pointer Electrical disintegration method outperforms conventional grinding in all impact categories. - Abstract: In order to develop an effective recycling system for obsolete Liquid Crystal Displays (LCDs), which would enable both the leaching of indium (In) and the recovery of a pure glass fraction for recycling, an effective liberation or size-reduction method would be an important pre-treatment step. Therefore, in this study, two different types of liberation methods: (1) conventional grinding, and (2) electrical disintegration have been tested and evaluated in the context of Life Cycle Assessment (LCA). In other words, the above-mentioned methods were compared in order to find out the one that ensures the highest leaching capacity for indium, as well as the lowest environmental burden. One of the main findings of this study was that the electrical disintegration was the most effective liberation method, since it fully liberated the indium containing-layer, ensuring a leaching capacity of 968.5 mg-In/kg-LCD. In turn, the estimate for the environmental burden was approximately five times smaller when compared with the conventional grinding.

Dodbiba, Gjergj, E-mail: dodbiba@sys.t.u-tokyo.ac.jp [Department of System Innovation, Graduate School of Engineering, University of Tokyo (Japan); Nagai, Hiroki; Wang Lipang; Okaya, Katsunori; Fujita, Toyohisa [Department of System Innovation, Graduate School of Engineering, University of Tokyo (Japan)

2012-10-15T23:59:59.000Z

331

Catalytic and physicochemical properties of aluminoplatinum catalysts modified with indium and gallium  

SciTech Connect (OSTI)

Aluminoplatinum catalysts (APC) are widely used in transformations of hydrocarbons, particularly in reforming of gasoline fractions and dehydrogenation of higher normal paraffins. Promotion of APC with indium and gallium increases their activity and stability in the dehydrogenation of paraffins. Introduction of group III elements in APC inhibits coke formation during dehydrogenation and prevents blocking of the surface of the Pt. The change in the catalytic properties of APC modified with In is due to the partial transfer of the electron density from Pt to In. Both APC with In and Ga additives and monometallic catalysts were studied in the present article by the methods of IR spectroscopy and adsorption. In addition to traditional transmission IR spectroscopy, IR spectroscopy in diffusely scattered light was used, which permits conducting both spectral and adsorption measurements on the same samples.

Zaitsev, A.V.; Tyupaev, A.P.; Borovkov, V.Yu.; Timofeeva, E.A.; Isatulyants, G.V.; Kazanskii, B.B.

1986-10-10T23:59:59.000Z

332

Study of indium and solder bumps for the BTeV Pixel Detector  

SciTech Connect (OSTI)

The pixel detector proposed for the BTeV experiment at the Fermilab Tevatron will use bump-bonding technology based on either Indium or Pb/Sn solder to connect the front-end readout chips to the silicon pixel sensors. We have studied the strength of the bumps by visual inspection of the bumps bonding silicon sensor modules to dummy chips made out of glass. The studies were done before and after thermal cycles, exposed to intense irradiation, and with the assemblies glued to a graphite substrate. We have also carried out studies on effects of temperature changes on both types of bump bonds by observing the responses of single-chip pixel detectors to an Sr{sup 90} source. We report the results from these studies and our plan to measure the effect of cryogenic temperatures on the bumps.

Simon W Kwan et al.

2003-11-05T23:59:59.000Z

333

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities  

E-Print Network [OSTI]

Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest ...

Woolf, Alexander; Aharanovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel A; Hu, Evelyn L

2014-01-01T23:59:59.000Z

334

Appearance of acute gouty arthritis on indium-111-labeled leukocyte scintigraphy  

SciTech Connect (OSTI)

Indium-111-labeled leukocyte scintigraphy was performed on a 66-yr-old male with polyarticular acute gouty arthritis. Images revealed intense labeled leukocyte accumulation in a pattern indistinguishable from septic arthritis, in both knees and ankles, and the metatarsophalangeal joint of both great toes, all of which were involved in the acute gouty attack. Joint aspirate as well as blood cultures were reported as no growth; the patient was treated with intravenous colchicine and ACTH for 10 days with dramatic improvement noted. Labeled leukocyte imaging, repeated 12 days after the initial study, revealed near total resolution of joint abnormalities, concordant with the patient's clinical improvement. This case demonstrates that while acute gouty arthritis is a potential pitfall in labeled leukocyte imaging, in the presence of known gout, it may provide a simple, objective, noninvasive method of evaluating patient response to therapy.

Palestro, C.J.; Vega, A.; Kim, C.K.; Swyer, A.J.; Goldsmith, S.J. (Mt. Sinai Medical Center, New York, NY (USA))

1990-05-01T23:59:59.000Z

335

Thng tin pht t my ghi m v khon chi tr phc li Bo Him Tht Nghip gn nht c th tip cn 24 ting  

E-Print Network [OSTI]

Thng tin pht t my ghi m v khon chi tr phc li Bo Him Tht Nghip gn nht c th tip cn 24 ting mt chiu, Th Hai n Th Su, hoc vo nhng ngy cui tun. Thng tin chi tr phc li UI c cp nht hng ngy, v phn nh sinh hot h s vo ngy lm vic trc . nhn c thng tin v khon chi tr ca mnh, xin lm nhng s la chn

336

Influence of surface defects and local structure on acid/base properties and oxidation pathways over metal oxide surfaces. Final report, June 1990--January 1997  

SciTech Connect (OSTI)

This final report covers work done during project period one and project period two. All the work in project period one was focused on the selective oxidation of oxygenated hydrocarbons over the SnO{sub 2}(110) single crystal surface. In project period two, the emphasis was on the acid/base properties of SnO{sub 2}(110) as well as two different Cu{sub 2}O single crystal surfaces. Prior to the summary of results, a description of these different surfaces is given as background information. Results are described for the dissociation and reaction of Bronsted acids (methanol, formic acid, water, formaldehyde, acetone, propene, acetic acid, and carbon monoxide). Results from project period two include: ammonia adsorption, CO{sub 2} adsorption, propene adsorption and oxidation, with tin oxides; complimentary work with copper oxides; and STM investigations.

Cox, D.F.

1997-12-31T23:59:59.000Z

337

(Data in metric tons, unless otherwise noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1997. Domestically  

E-Print Network [OSTI]

--United States: 1993 1994 1995 1996 1997e Production, refinery -- -- -- -- -- Imports for consumption 73.4 70 for the indium market remains promising. World Refinery Production, Reserves, and Reserve Base: Refinery

338

Organic Light Emitting Diodes Using a Ga:ZnO Anode  

SciTech Connect (OSTI)

We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are then compared. Relative to ITO, the GZO anodes have slightly better sheet resistance and transparency in the visible spectral region. Device data suggest GZO results in more effective hole injection into an aromatic triamine hole transporting layer. Indium free anodes are expected toimprove OLED stability while lowering the cost per unit area, crucial for OLED based lighting applications.

Berry, J. J.; Ginley, D. S.; Burrows, Paul E.

2008-05-12T23:59:59.000Z

339

Oxidation catalyst  

DOE Patents [OSTI]

The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

2010-11-09T23:59:59.000Z

340

LABORATORY REPORT ON THE REDUCTION AND STABILIZATION (IMMOBILIZATION) OF PERTECHNETATE TO TECHNETIUM DIOXIDE USING TIN(II)APATITE  

SciTech Connect (OSTI)

This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-105 simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mo bile +7 state under acidic or oxygenated conditions within the tested period oftime (6 weeks). Previous work (RPP-RPT-39195, Assessment of Technetium Leachability in Cement-Stabilized Basin 43 Groundwater Brine) indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table A shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit. The loaded sample (200 mg of Sn(II)apatite loaded with O.311 mg of Tc-99) was subjected to different molarities of nitric acid to determine if the Sn(II)apatite would release the sequestered technetium. The acid was allowed to contact for 1 minute with gentle shaking ('1st wash'); the aqueous solution was then filtered, and the filtrate was analyzed for Tc-99. Table B shows the results ofthe nitric acid exposure. Another portion of acid was added, shaken for a minute, and filtered ('2nd wash'). The technetium-loaded Sn(II)apatite was also subjected to water leach tests. The loaded sample (0.2 g of Sn(II)apatite was loaded with 0.342 mg of Tc-99) was placed in a 200-mL distilled water column and sparged with air. Samples were taken weekly over a 6-week period, and the dissolved oxygen ranged from 8.4 to 8.7 mg/L (average 8.5 mg/L); all samples recorded less than the detection limit of 0.01 mg/L Tc-99. The mechanism by which TcO{sub 2} is sequestered and hence protected from re-oxidation appears to be an exchange with phosphate in the apatite lattice, as the phosphorus that appeared in solution after reaction with technetium was essentially the same moles of technetium that were taken up by the Sn(II)apatite (Table 6). Overall, the reduction of the mobile pertechnetate (+7) to the less mobile technetium dioxide (+4) by Sn(II)apatite and subsequent sequestration of the technetium in the material indicates that Sn(II)apatite is an excellent candidate for long-term immobilization of technetium. The indications are that the Sn(II)apatite will lend itself to sequestering and inhibiting the reoxidation to the mobile pertechnetate species, thus keeping the radionuclide out of the environment.

DUNCAN JB; HAGERTY K; MOORE WP; RHODES RN; JOHNSON JM; MOORE RC

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells  

DOE Patents [OSTI]

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

1999-02-16T23:59:59.000Z

342

Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals  

SciTech Connect (OSTI)

In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

Abdinov, A. Sh., E-mail: abdinov-axmed@yandex.ru [Baku State University (Azerbaijan); Babayeva, R. F., E-mail: Babaeva-Rena@yandex.ru [Azerbaijan State Economic University (Azerbaijan); Amirova, S. I.; Rzayev, R. M. [Baku State University (Azerbaijan)] [Baku State University (Azerbaijan)

2013-08-15T23:59:59.000Z

343

Real-time X-ray Diffraction Measurements of Shocked Polycrystalline Tin and Aluminum  

SciTech Connect (OSTI)

A new, fast, single-pulse x-ray diffraction (XRD) diagnostic for determining phase transitions in shocked polycrystalline materials has been developed. The diagnostic consists of a 37-stage Marx bank high-voltage pulse generator coupled to a needle-and-washer electron beam diode via coaxial cable, producing line and bremsstrahlung x-ray emission in a 35-ns pulse. The characteristic K? lines from the selected anodes of silver and molybdenum are used to produce the diffraction patterns, with thin foil filters employed to remove the characteristic K? line emission. The x-ray beam passes through a pinhole collimator and is incident on the sample with an approximately 3-mm by 6-mm spot and 1 full-width-half-maximum (FWHM) angular divergence in a Bragg-reflecting geometry. For the experiments described in this report, the angle between the incident beam and the sample surface was 8.5. A Debye-Scherrer diffraction image was produced on a phosphor located 76 mm from the polycrystalline sample surface. The phosphor image was coupled to a charge-coupled device (CCD) camera through a coherent fiberoptic bundle. Dynamic single-pulse XRD experiments were conducted with thin foil samples of tin, shock loaded with a 1-mm vitreous carbon back window. Detasheet high explosive with a 2-mm-thick aluminum buffer was used to shock the sample. Analysis of the dynamic shock-loaded tin XRD images revealed a phase transformation of the tin beta phase into an amorphous or liquid state. Identical experiments with shock-loaded aluminum indicated compression of the face-centered-cubic (fcc) aluminum lattice with no phase transformation.

Dane V. Morgan, Don Macy, Gerald Stevens

2008-11-22T23:59:59.000Z

344

Excitation energy and strength of the pygmy dipole resonance in stable tin isotopes  

E-Print Network [OSTI]

The $^{112,120}$Sn$(\\gamma,\\gamma')$ reactions have been studied at the S-DALINAC. Electric dipole (E1) strength distributions have been determined including contributions from unresolved strength extracted by a fluctuation analysis. Together with available data on $^{116,124}$Sn, an experimental systematics of the pygmy dipole resonance (PDR) in stable even-mass tin isotopes is established. The PDR centroid excitation energies and summed strengths are in reasonable agreement with quasiparticle-phonon model calculations based on a nonrelativistic description of the mean field but disagree with relativistic quasiparticle random-phase approximation predictions.

B. zel; J. Enders; H. Lenske; P. von Neumann-Cosel; I. Poltoratska; V. Yu. Ponomarev; A. Richter; D. Savran; N. Tsoneva

2009-01-16T23:59:59.000Z

345

Suppression of tin precipitation in SiSn alloy layers by implanted carbon  

SciTech Connect (OSTI)

By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.

Gaiduk, P. I., E-mail: gaiduk@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Belarusian State University, prosp. Nezavisimosti 4, 220030 Minsk (Belarus); Lundsgaard Hansen, J., E-mail: johnlh@phys.au.dk; Nylandsted Larsen, A., E-mail: anl@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Bregolin, F. L., E-mail: f.lipp-bregolin@hzdr.de; Skorupa, W., E-mail: W.Skorupa@hzdr.de [Department of Semiconductor Materials, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrae 400, 01328 Dresden (Germany)

2014-06-09T23:59:59.000Z

346

Tin City Long Range Radar Station Wind Farm | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-gTaguspark JumpDetective JumpInc., 2010)PtyO'reillyOpen EnergyTin City

347

Proton elastic scattering from tin isotopes at 295 MeV and systematic change of neutron density distributions  

E-Print Network [OSTI]

Cross sections and analyzing powers for proton elastic scattering from $^{116,118,120,122,124}$Sn at 295 MeV have been measured for a momentum transfer of up to about 3.5 fm$^{-1}$ to deduce systematic changes of the neutron density distribution. We tuned the relativistic Love-Franey interaction to explain the proton elastic scattering of a nucleus whose density distribution is well known. Then, we applied this interaction to deduce the neutron density distributions of tin isotopes. The result of our analysis shows the clear systematic behavior of a gradual increase in the neutron skin thickness of tin isotopes with mass number.

S. Terashima; H. Sakaguchi; H. Takeda; T. Ishikawa; M. Itoh; T. Kawabata; T. Murakami; M. Uchida; Y. Yasuda; M. Yosoi; J. Zenihiro; H. P. Yoshida; T. Noro; T. Ishida; S. Asaji; T. Yonemura

2008-02-02T23:59:59.000Z

348

Shell-model study of quadrupole collectivity in light tin isotopes  

E-Print Network [OSTI]

A realistic shell-model study is performed for neutron-deficient tin isotopes up to mass A=108. All shell-model ingredients, namely two-body matrix elements, single-particle energies, and effective charges for electric quadrupole transition operators, have been calculated by way of the many-body perturbation theory, starting from a low-momentum interaction derived from the high-precision CD-Bonn free nucleon-nucleon potential. The focus has been put on the enhanced quadrupole collectivity of these nuclei, which is testified by the observed large B(E2;0+ -> 2+)s. Our results evidence the crucial role played by the Z=50 cross-shell excitations that need to be taken into account explicitly to obtain a satisfactory theoretical description of light tin isotopes. We find also that a relevant contribution comes from the calculated neutron effective charges, whose magnitudes exceed the standard empirical values. An original double-step procedure has been introduced to reduce effectively the model space in order to ov...

Coraggio, L; Gargano, A; Itaco, N; Kuo, T T S

2015-01-01T23:59:59.000Z

349

Shell-model study of quadrupole collectivity in light tin isotopes  

E-Print Network [OSTI]

A realistic shell-model study is performed for neutron-deficient tin isotopes up to mass A=108. All shell-model ingredients, namely two-body matrix elements, single-particle energies, and effective charges for electric quadrupole transition operators, have been calculated by way of the many-body perturbation theory, starting from a low-momentum interaction derived from the high-precision CD-Bonn free nucleon-nucleon potential. The focus has been put on the enhanced quadrupole collectivity of these nuclei, which is testified by the observed large B(E2;0+ -> 2+)s. Our results evidence the crucial role played by the Z=50 cross-shell excitations that need to be taken into account explicitly to obtain a satisfactory theoretical description of light tin isotopes. We find also that a relevant contribution comes from the calculated neutron effective charges, whose magnitudes exceed the standard empirical values. An original double-step procedure has been introduced to reduce effectively the model space in order to overcome the computational problem.

L. Coraggio; A. Covello; A. Gargano; N. Itaco; T. T. S. Kuo

2015-04-13T23:59:59.000Z

350

JOURNAL DE PHYSIQUE Colloque C6, supplment au no 12, Tome 35, Dcembre 1974,page C6-379 DEBYE-WALLER FACTOR OF TIN-ANTIMONY SOLID SOLUTIONS  

E-Print Network [OSTI]

-WALLER FACTOR OF TIN-ANTIMONY SOLID SOLUTIONS J. SITEK, J. CIRAK and J. LIPKA Slovak Technical University at % and 10at %tin in antimony. Values of the forceconstantratio have been obtained. The Mossbauer effect recoilless fraction for the sample with 3 at % (sample 1) and 10 at % (sample 2) of tin in antimony became

Paris-Sud XI, Universit de

351

JOURNAL DE PHYSIQUE Colloque C6, supplkment au no 8, Tome 39, aozit 1978,page C6-1097 AN EXPERIMENTAL TEST OF THE RIGID-MUFFIN-TIN APPROXIMATION USED IN THE THEORY OF  

E-Print Network [OSTI]

-1097 AN EXPERIMENTAL TEST OF THE RIGID-MUFFIN-TIN APPROXIMATION USED IN THE THEORY OF ELECTRON-PHONON INTERACTION W electron-phonon et B T sont prdsentdes. Abstract.- The validity of the rigidmuffin-tin approximation theoreticalwork on electron-phonon interaction in transition metals makes use of the rigid-muffin-tin (RMT

Boyer, Edmond

352

Diffusion of In{sub 0.53}Ga{sub 0.47}As elements through hafnium oxide during post deposition annealing  

SciTech Connect (OSTI)

Diffusion of indium through HfO{sub 2} after post deposition annealing in N{sub 2} or forming gas environments is observed in HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO{sub 2} and is desorbed upon annealing at 350?C. Reduction of the interfacial layer thickness and potential densification of HfO{sub 2}, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance.

Cabrera, W.; Brennan, B.; Dong, H.; Wallace, R. M.; Chabal, Y. J., E-mail: chabal@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); O'Regan, T. P.; Povey, I. M.; Monaghan, S.; O'Connor, .; Hurley, P. K. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)] [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)

2014-01-06T23:59:59.000Z

353

(Data in metric tons of tin content unless otherwise noted) Domestic Production and Use: Tin has not been mined or smelted in the United States since 1993 and 1989,  

E-Print Network [OSTI]

,410 9,800 3,170 5,630 6,200 Shipments from Government stockpile excesses 4,540 60 -- -- -- Consumption: electrical, 29%; cans and containers, 18%; construction, 13%; transportation, 12%; and other, 28 as follows: primary metal consumed, $980 million; imports for consumption, refined tin, $1.36 billion

354

Tin-Based Reactive Solders for Ceramic/Metal Joints RAKESH R. KAPOOR and THOMAS W . EAGAR  

E-Print Network [OSTI]

( { ) Tin-Based Reactive Solders for Ceramic/Metal Joints RAKESH R. KAPOOR and THOMAS W . EAGAR engine com- ponents), wear parts, tool materials, electrical feed- throughs, and metal contacts on ceramics. To overcome this problem, reactive metals are added to the filler metai.11- 181These reactive

Eagar, Thomas W.

355

Project Profile: High Performance Reduction/Oxidation Metal Oxides...  

Office of Environmental Management (EM)

High Performance ReductionOxidation Metal Oxides for Thermochemical Energy Storage Project Profile: High Performance ReductionOxidation Metal Oxides for Thermochemical Energy...

356

Electrochemical Quartz Crystal Microbalance Studies of Electron Addition at Nanocrystalline Tin Oxide/Water and Zinc Oxide/Water Interfaces: Evidence for  

E-Print Network [OSTI]

with previous results for titanium dioxide in nonaqueous electrolytes, suggest that charge-compensating cation that electron addition to the nanocrys- talline titanium dioxide/nonaqueous electrolyte interface is accompanied quantitatively by the intercalation of charge- compensating alkali metal cations or by adsorption of larger

357

Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films  

SciTech Connect (OSTI)

Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

Hoffman, D.M. [Houston Univ., TX (United States); Atagi, L.M. [Houston Univ., TX (United States)]|[Los Alamos National Lab., NM (United States); Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang [Houston Univ., TX (United States); Rubiano, R.R. [Massachusetts Inst. of Tech., Cambridge, MA (United States); Springer, R.W.; Smith, D.C. [Los Alamos National Lab., NM (United States)

1994-06-01T23:59:59.000Z

358

Orbital dependent nucleonic pairing in the lightest known isotopes of tin  

E-Print Network [OSTI]

By studying the 109Xe-->105Te-->101Sn superallowed alpha-decay chain, we observe low-lying states in 101Sn, the one-neutron system outside doubly magic 100Sn. We find that the spins of the ground state (J = 7=2) and first excited state (J = 5=2) in 101Sn are reversed with respect to the traditional level ordering postulated for 103Sn and the heavier tin isotopes. Through simple arguments and state-of-the-art shell model calculations we explain this unexpected switch in terms of a transition from the single-particle regime to the collective mode in which orbital-dependent pairing correlations, dominate.

Iain G. Darby; Robert K. Grzywacz; Jon C. Batchelder; Carrol R. Bingham; Lucia Cartegni; Carl J. Gross; Morten Hjorth-Jensen; David T. Joss; Sean N. Liddick; Witold Nazarewicz; Stephen Padgett; Robert D. Page; Thomas Papenbrock; Mustafa M. Rajabali; Jimmy Rotureau; Krzysztof P. Rykaczewski

2010-09-11T23:59:59.000Z

359

Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions  

DOE Patents [OSTI]

The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Mausner, Leonard F. (Stony Brook, NY); Atkins, Harold L. (Setauket, NY)

1998-12-29T23:59:59.000Z

360

Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions  

DOE Patents [OSTI]

The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients. 5 figs.

Srivastava, S.C.; Meinken, G.E.; Mausner, L.F.; Atkins, H.L.

1998-12-29T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Method for producing nanostructured metal-oxides  

DOE Patents [OSTI]

A synthetic route for producing nanostructure metal-oxide-based materials using sol-gel processing. This procedure employs the use of stable and inexpensive hydrated-metal inorganic salts and environmentally friendly solvents such as water and ethanol. The synthesis involves the dissolution of the metal salt in a solvent followed by the addition of a proton scavenger, which induces gel formation in a timely manner. Both critical point (supercritical extraction) and atmospheric (low temperature evaporation) drying may be employed to produce monolithic aerogels and xerogels, respectively. Using this method synthesis of metal-oxide nanostructured materials have been carried out using inorganic salts, such as of Fe3+, Cr3+, Al3+, Ga3+, In3+, Hf4+, Sn4+, Zr4+, Nb5+, W6+, Pr3+, Er3+, Nd3+, Ce3+, U3+ and Y3+. The process is general and nanostructured metal-oxides from the following elements of the periodic table can be made: Groups 2 through 13, part of Group 14 (germanium, tin, lead), part of Group 15 (antimony, bismuth), part of Group 16 (polonium), and the lanthanides and actinides. The sol-gel processing allows for the addition of insoluble materials (e.g., metals or polymers) to the viscous sol, just before gelation, to produce a uniformly distributed nanocomposites upon gelation. As an example, energetic nanocomposites of FexOy gel with distributed Al metal are readily made. The compositions are stable, safe, and can be readily ignited to thermitic reaction.

Tillotson, Thomas M.; Simpson, Randall L.; Hrubesh, Lawrence W.; Gash, Alexander

2006-01-17T23:59:59.000Z

362

Asphalt Oxidation Kinetics and Pavement Oxidation Modeling  

E-Print Network [OSTI]

Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement...

Jin, Xin

2012-07-16T23:59:59.000Z

363

Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt  

SciTech Connect (OSTI)

The problem regarding the distribution of aluminum and indium impurities in bulk crystals of solid solutions with a variable composition Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.3) is solved in order to establish regularities of the changes in the segregation coefficients of impurities with variations in the composition of the host lattice in the germanium-silicon system. Aluminum-and indium-doped crystals of Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.3) solid solutions with a silicon content decreasing along the crystallization axis are grown by a modified Bridgman method with the use of a silicon seed. The concentration distribution of impurities over the length of the crystals is determined from Hall measurements. It is demonstrated that the experimental data on the concentration distribution of impurities in the crystals are in good agreement with the results obtained from the theory according to which the equilibrium segregation coefficients of impurities vary linearly with a change in the composition of Ge-Si solid solution crystals.

Kyazimova, V. K. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: zangi@physics.ab.az; Zeynalov, Z. M. [Ganja State University (Azerbaijan); Zakhrabekova, Z. M.; Azhdarov, G. Kh. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2006-12-15T23:59:59.000Z

364

Graphene: A New Era of Technology  

E-Print Network [OSTI]

Abstract The aim of this literature indicate that graphene composites are promising multifunctional materials with improved tensile strength and elastic modulus, mechanical strength, optical property, electrical and thermal conductivity. Its unique quality light weight, high strength, excellent electric conductivity makes it differ from any other material. It has ability to replace the silicon and change the scenario of semiconductor devices. It is a base of nano technology. Due to its unique properties, it will sets the new dimension in the nano techno world. Keywords Molybdenum-disulphide (MoS 2), chemically reduced graphene oxide (CRGO), indium tin oxide (ITO), graphene oxide (GO), thermally reduce graphene oxide (TRGO) I.

Ankita Dixit; Divya Dixit; Vidhi Vart Ch; Ashok Kajla

365

Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species  

DOE Patents [OSTI]

A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

Teeter, Glenn; Du, Hui; Young, Matthew

2013-08-06T23:59:59.000Z

366

Effect of TiN coatings on the rolling contact fatigue behavior of M50 bearing steel. Final report  

SciTech Connect (OSTI)

There is a continuing requirement for improved bearing performance for both commercial and military applications. Service temperatures are increasing steadily due to increased power requirements and corrosion of components remains a major concern as well, particularly for bearings in military systems. In our ongoing study, a number of different coatings were applied to VIM-VAR M50 bearing steel to improve both corrosion resistance and rolling contact fatigue behavior. This report deals specifically with coatings produced by the ion beam assisted deposition IBAD of TiN, details of the coating process, and test results obtained. The rolling contact fatigue performance of IBAD TiN coated M50 samples demonstrated increased lifetime performance and durability for a 1 micrometer thick coating. Preliminary data on corrosion properties is also presented.

Middleton, R.M.; Huang, P.J.; Wells, M.G.; Kant, R.A.

1992-12-01T23:59:59.000Z

367

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells  

SciTech Connect (OSTI)

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

Sowinska, Malgorzata, E-mail: sowinska@ihp-microelectronics.com; Bertaud, Thomas; Walczyk, Damian; Calka, Pauline; Walczyk, Christian [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Thiess, Sebastian [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Alff, Lambert [Institute of Materials Science, Technische Universitt Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universitt, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-05-28T23:59:59.000Z

368

Photo-oxidation catalysts  

DOE Patents [OSTI]

Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

2009-07-14T23:59:59.000Z

369

Oxidation of propylene over copper oxide catalysts  

E-Print Network [OSTI]

work on other phases of this project concerning cata- lytic oxidation of hydrocarbons has been described by Sanderson (59), Looney (34), Burns (11), Dunlop (17), Woodham (71), and Perkins (49). The early work of Sanderson indicated that chromia-alumina... and pro- moted chromia?alumina agents possessed the ability to catalyze the oxidation of propane by air. Subsequent work of Looney suggested that propylene was a primary product of this oxidation; hence most investigations since then have been confined...

Billingsley, David Stuart

1958-01-01T23:59:59.000Z

370

Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin  

SciTech Connect (OSTI)

Silicon (Si) has a very high lithium storage capacity and is being explored as a negative electrode material in lithium-ion batteries (LIBs). Si nanowires can exhibit relatively stable performance for many cycles of charging; however, conductive carbon must often be added to the electrode layer to improve the rate capability due to the relatively low electrical conductivity of Si. The added carbon lowers the capacity of the electrode. Here, we show that the rate capability of Si in LIBs can be substantially enhanced by incorporating tin (Sn) into Si nanowires. The solubility of Sn in Si is very low (0.015 at%); yet, Sn used as a seed for supercritical fluidliquidsolid (SFLS) growth can be trapped in Si nanowires with relatively high concentration (10 at%). Such Sn-containing Si nanowires and no added conductive carbon in the electrode layer, could be cycled in LIBs with high capacity (*1000 mA h g*1 over 100 cycles) at a current density of 2.8 A g*1 (1 C). Capacities exceeding that of graphite could still be reached at cycle rates as high as 2 C. Real-time in situ transmission electron microscopy (TEM) revealed that lithiation occurs five times faster in Si nanowires with significant amounts of Sn than in the Si nanowires without Sn, and twice as fast as in nanowires that were coated with carbon.

Bogart, Timothy D.; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

2014-10-30T23:59:59.000Z

371

In situ formation of tin nanocrystals embedded in silicon nitride matrix  

SciTech Connect (OSTI)

Tin (Sn) nanocrystals (NCs) embedded in a silicon nitride (Si{sub 3}N{sub 4}) matrix have been fabricated in a cosputtering process employing low temperature (100 deg. C) substrate heating. Transmission electron microscopy (TEM) showed the formation of uniformly sized Sn NCs of 5.2+-0.9 nm evenly distributed in the Si{sub 3}N{sub 4} matrix. Both TEM and x-ray diffraction measurements showed that the Sn NCs adopted the semimetallic tetragonal beta-Sn structure rather than the cubic semiconducting alpha-Sn structure. X-ray photoelectron spectroscopy revealed that the semimetallic state (Sn{sup 0}) is the major component of Sn in the sample films. Our investigation demonstrates a pronounced effect of the substrate temperature on the formation of Sn NCs. The mechanism of in situ formation of Sn NCs is discussed. We suggest that the formation of uniformly sized Sn NCs is correlated with lowering the surface mobility of the nuclei due to the presence of the cosputtered Si{sub 3}N{sub 4}.

Huang Shujuan; So, Yong Heng; Conibeer, Gavin; Green, Martin A. [ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, New South Wales 2052 (Australia)

2009-06-15T23:59:59.000Z

372

Thng 9, 2011 Xu t b n b i O ce of International A airs M i thng tin trong t ri ny u c trn m ng. c thng tin chi ti t v c p nh t, xin vui lng  

E-Print Network [OSTI]

Thng 9, 2011 Xu t b n b i O ce of International A airs M i thng tin trong t ri ny u c trn m ng. c thng tin chi ti t v c p nh t, xin vui lng tra c u t i website c a chng ti : httpThng tin nhanh NTU, tr ng i h c t ng h p l n nh t v lu i nh t i Loan, thng bo cc chng trnh o

Wu, Yih-Min

373

Cerium Oxide Coating for Oxidation Reduction  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Award In order to produce power more efficiently and cleanly, the next generation of power plant boilers, turbines, solid oxide fuel cells (SOFCs) and other essential...

374

Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated  

E-Print Network [OSTI]

Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W through the 106-nm-thick TiN film. W piles up at the TiN/Ti interface, while F rapidly saturates the TiN-sectional and scanning transmission electron microscopy analyses demonstrate that WF6 penetrates into the TiN layer

Allen, Leslie H.

375

High-rate and low-temperature synthesis of TiO2, TiN, and TiO2/TiN/TiO2 thin films and study of their optical and interfacial characteristics  

E-Print Network [OSTI]

High-rate and low-temperature synthesis of TiO2, TiN, and TiO2/TiN/TiO2 thin films and study with unbalanced magnetrons, we deposited advanced inorganic functional thin films such as TiO2, TiN, and TiO2/Ti sputtering. The TiO2 101 and TiN 100 thin films were stoichiometric and polycrystalline but highly oriented

Boo, Jin-Hyo

376

Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same  

DOE Patents [OSTI]

Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

2004-07-13T23:59:59.000Z

377

Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same  

DOE Patents [OSTI]

Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

2006-04-04T23:59:59.000Z

378

Novel Catalyst Support Materials for PEM Fuel Cells: Current Status and Future Prospects  

SciTech Connect (OSTI)

The catalyst supports exhibit great influence on the cost, performance, and durability of polymer electrolyte membrane (PEM) fuel cells. This review paper is to summarize several important kinds of novel support materials for PEM fuel cells (including direct methanol fuel cell, DMFC): nanostructured carbon materials (carbon nanotubes/carbon nanofibers, mesoporous carbon), conductive doped diamonds and nanodiamonds, conductive oxides (tin oxide/indium tin oxide, titanium oxide, tungsten oxide) and carbides (tungsten carbides). The advantages and disadvantages, the acting mechanism to promote electrocatalysis, and the strategies to improve present catalyst support materials and to search for new ones are discussed. This is expected to throw light on future development of catalyst support for PEM fuel cells.

Shao, Yuyan; Liu, Jun; Wang, Yong; Lin, Yuehe

2008-12-15T23:59:59.000Z

379

Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating  

DOE Patents [OSTI]

A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

Howard, Stanley R. (Windsor, SC); Korinko, Paul S. (Aiken, SC)

2008-05-27T23:59:59.000Z

380

Initial stages of ITO/Si interface formation: In situ x-ray photoelectron spectroscopy measurements upon magnetron sputtering and atomistic modelling using density functional theory  

SciTech Connect (OSTI)

Initial stages of indium tin oxide (ITO) growth on a polished Si substrate upon magnetron sputtering were studied experimentally using in-situ x-ray photoelectron spectroscopy measurements. The presence of pure indium and tin, as well as Si bonded to oxygen at the ITO/Si interface were observed. The experimental observations were compared with several atomistic models of ITO/Si interfaces. A periodic model of the ITO/Si interface was constructed, giving detailed information about the local environment at the interface. Molecular dynamics based on density functional theory was performed, showing how metal-oxygen bonds are broken on behalf of silicon-oxygen bonds. These theoretical results support and provide an explanation for the present as well as previous ex-situ and in-situ experimental observations pointing to the creation of metallic In and Sn along with the growth of SiO{sub x} at the ITO/Si interface.

Lvvik, O. M.; Diplas, S.; Ulyashin, A. [SINTEF Materials and Chemistry, Forskningsveien 1, NO-0314 Oslo (Norway); Romanyuk, A. [University of Basel, Kingelbergstr. 82, CH-4056 Basel (Switzerland)

2014-02-28T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

THE MICROSTRUCTURAL LOCATION OF THE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR  

E-Print Network [OSTI]

OXIDE PHASE IN A ZINC OXIDE VARISTOR MICROSI'RUCTIJRALMETAL OXIDE PHASE IN A ZINC OXIDE VARISTOR David R. Clarke

Clarke, D. E

2011-01-01T23:59:59.000Z

382

Formation of Light Isotopes by Protons and Deuterons of 3.65 GeV/nucleon on Separated Tin Isotopes  

E-Print Network [OSTI]

We measure cross sections for residual nuclide formation in the mass range 6 tin isotopes (112-Sn, 118-Sn, 120-Sn, 124-Sn). The experimental data are compared with calculations by the codes FLUKA, LAHET, CEM03, and LAQGSM03. Scaling behavior is observed for the whole mass region of residual nuclei, showing a possible multifragmentation mechanism for the formation of light products (6 < A < 31). Our analysis of the isoscaling dependence also shows a possible contribution of multifragmentation to the production of heavier nuclides, in the mass region 39 < A < 81.

A. R. Balabekyan; A. S. Danagulyan; J. R. Drnoyan; G. H. Hovhannisyan; J. Adam; V. G. Kalinnikov; M. I. Krivopustov; V. S. Pronskikh; V. I. Stegailov; A. A. Solnyshkin; P. Chaloun; V. M. Tsoupko-Sitnikov; S. G. Mashnik; K. K. Gudima

2005-06-22T23:59:59.000Z

383

Evolution of optical properties of tin film from solid to liquid studied by spectroscopic ellipsometry and ab initio calculation  

SciTech Connect (OSTI)

The temperature dependent optical properties of tin film from solid to liquid were studied by spectroscopic ellipsometry and ab initio molecular dynamics simulations. The dielectric function of liquid Sn was different from solid, and an interband transition near 1.5?eV was easily observed in solid while it apparently disappeared upon melting. From the evolution of optical properties with temperature, an optical measurement to acquire the melting point by ellipsometry was presented. From first principles calculation, we show that the local structure difference in solid and liquid is responsible for this difference in the optical properties observed in experiment.

Zhang, D. X.; Shen, B.; Zheng, Y. X.; Wang, S. Y.; Zhang, J. B.; Yang, S. D.; Zhang, R. J.; Chen, L. Y.; Wang, C. Z.; Ho, K. M.

2014-03-24T23:59:59.000Z

384

Tin-117m-labeled stannic (Sn/sup 4 +/) chelate of diethylenetriamine pentaacetic acid (DTPA) for application in diagnosis and therapy  

DOE Patents [OSTI]

The radiopharmaceutical reagents of this invention and the class of Tin-117m radiopharmaceuticals are therapeutic and diagnostic agents that incorporate gamma-emitting nuclides that localize in bone after intravenous injection in mammals (mice, rats, dogs, and rabbits). Images reflecting bone structure or function can then be obtained by a scintillation camera that detects the distribution of ionizing radiation emitted by the radioactive agent. Tin-117m-labeled chelates of stannic tin localize almost exclusively in cortical bone. Upon intravenous injection of the reagent, the preferred chelates are phosphonate compounds, preferable, PYP, MDP, EHDP, and DTPA. This class of reagents is therapeutically and diagnostically useful in skeletal scintigraphy and for the radiotherapy of bone tumors and other disorders.

Srivastava, S.C.; Meinken, G.E.; Richards, P.

1983-08-25T23:59:59.000Z

385

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide  

E-Print Network [OSTI]

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO) and reduced graphene oxide (rGO) films grown on silicon substrate to cause the aniline to azobenzene oxidation

Kim, Sehun

386

Oxidation Resistant Graphite Studies  

SciTech Connect (OSTI)

The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

W. Windes; R. Smith

2014-07-01T23:59:59.000Z

387

Barium oxide, calcium oxide, magnesia, and alkali oxide free glass  

DOE Patents [OSTI]

A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

2013-09-24T23:59:59.000Z

388

METAL OXIDE NANOPARTICLES  

SciTech Connect (OSTI)

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

389

Mixed oxide solid solutions  

DOE Patents [OSTI]

The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

2003-01-01T23:59:59.000Z

390

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination  

E-Print Network [OSTI]

of the display industry as it moves from liquid crystal to organic light emitting diode technology and with requirements for larger areas and higher resolutions. A number of alternative material systems to a-Si:H have emerged, including organic semiconductors...

Flewitt, Andrew J.; Powell, M.J.

2014-01-01T23:59:59.000Z

391

Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint  

SciTech Connect (OSTI)

Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

2012-08-01T23:59:59.000Z

392

Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes  

SciTech Connect (OSTI)

We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage ? to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ?. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of ?. Based on this theory, we predict a dependency of ? on ? that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

Wissman, J., E-mail: jwissman@andrew.cmu.edu [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Finkenauer, L. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Deseri, L. [DICAM, Department of Mechanical, Civil and Environmental Engineering, University of Trento, via Mesiano 77 38123 Trento (Italy); TMHRI-Department of Nanomedicine, The Methodist Hospital Research Institute, 6565 Fannin St., MS B-490 Houston, Texas 77030 (United States); Mechanics, Materials and Computing Center, CEE and ME-CIT, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Majidi, C. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Robotics Institute and Department of Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

2014-10-14T23:59:59.000Z

393

Method and system for the combination of non-thermal plasma and metal/metal oxide doped .gamma.-alumina catalysts for diesel engine exhaust aftertreatment system  

DOE Patents [OSTI]

The present disclosure pertains to a system and method for treatment of oxygen rich exhaust and more specifically to a method and system that combines non-thermal plasma with a metal doped .gamma.-alumina catalyst. Current catalyst systems for the treatment of oxygen rich exhaust are capable of achieving only approximately 7 to 12% NO.sub.x reduction as a passive system and only 25 40% reduction when a supplemental hydrocarbon reductant is injected into the exhaust stream. It has been found that treatment of an oxygen rich exhaust initially with a non-thermal plasma and followed by subsequent treatment with a metal doped .gamma.-alumina prepared by the sol gel method is capable of increasing the NO.sub.x reduction to a level of approximately 90% in the absence of SO.sub.2 and 80% in the presence of 20 ppm of SO.sub.2. Especially useful metals have been found to be indium, gallium, and tin.

Aardahl, Christopher L. (Richland, WA); Balmer-Miller, Mari Lou (West Richland, WA); Chanda, Ashok (Peoria, IL); Habeger, Craig F. (West Richland, WA); Koshkarian, Kent A. (Peoria, IL); Park, Paul W. (Peoria, IL)

2006-07-25T23:59:59.000Z

394

Low-temperature beam-induced deposition of thin tin films H. 0. Funsten,a)J. W. Boring, and R. E. Johnson  

E-Print Network [OSTI]

nuclear energy deposition. Residual films are analyzed ex situ by scanningelectron microscopy, mechanicalLow-temperature beam-induced deposition of thin tin films H. 0. Funsten,a)J. W. Boring, and R. E K) BID in which the condensationrate of the precursor gas is well controlled. The residual metallic

Johnson, Robert E.

395

Growth and Properties of (001)-oriented Pb(Zr?.??Ti?.??)O?/LaNiO? Films on Si(001) Substrates with TiN Buffer Layers  

E-Print Network [OSTI]

Pulsed laser deposition has been used to grow Pb(Zr?.??Ti?.??)O? (PZT)/LaNiO? (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO?-coated Si(001) substrates, using TiN buffer layers. ...

Zhu, Tie-Jun

396

Characterization of TiN, TiC and TiCN coatings on Ti50.6 at.% Ni alloy deposited by PIII and deposition technique  

E-Print Network [OSTI]

high content of nickel [1]. In addition, its wear resistance is expected to be improved by transition-metal as nitride, carbide and carbonitride, respectively. Based on the electrochemical measurement and ion carbides and nitrides coatings at a rather broad composition range, such as TiN, TiC and TiC1-xNx (0b?b1

Zheng, Yufeng

397

formation of the main deposit. At lower current densities, it is possible to deposit only this extremely thin tin film: it is 5 nm thick  

E-Print Network [OSTI]

. Whereas the 200-nm copper and 300-nm tin films in Fig. 4 have a thickness close to that predicted. We propose the following mechan- istic explanation of this effect. First, in thin cells problems of Li rechargeable batteries. Indeed, cycling efficiency of Li batteries is drastically reduced

Stocker, Thomas

398

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04T23:59:59.000Z

399

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

1988-01-01T23:59:59.000Z

400

Reducible oxide based catalysts  

DOE Patents [OSTI]

A catalyst is disclosed herein. The catalyst includes a reducible oxide support and at least one noble metal fixed on the reducible oxide support. The noble metal(s) is loaded on the support at a substantially constant temperature and pH.

Thompson, Levi T.; Kim, Chang Hwan; Bej, Shyamal K.

2010-04-06T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

EFFECT OF THERMAL PROCESSES ON COPPER-TIN ALLOYS FOR ZINC GETTERING  

SciTech Connect (OSTI)

A contamination mitigation plan was initiated to address the discovery of radioactive zinc‐65 in a glovebox. A near term solution was developed, installation of heated filters in the glovebox piping. This solution is effective at retaining the zinc in the currently contaminated area, but the gamma emitting contaminant is still present in a system designed for tritium beta. A project was initiated to develop a solution to contain the {sup 65}Zn in the furnace module. Copper and bronze (a Cu/Sn alloy) were found to be candidate materials to combine with zinc‐65 vapor, using thermodynamic calculations. A series of binary Cu/Sn alloys were developed (after determining that commercial alloys were unacceptable), that were found to be effective traps of zinc vapor. The task described in this report was undertaken to determine if the bronze substrates would retain their zinc gettering capability after being exposed to simulated extraction conditions with oxidizing and reducing gases. Pure copper and three bronze alloys were prepared, exposed to varying oxidation conditions from 250 to 450{degree}C, then exposed to varying reduction conditions in He-H{sub 2} from 250-450{degree}C, and finally exposed to zinc vapor at 350{degree}C for four hours. The samples were characterized using scanning electron microscopy, X-ray diffraction, differential thermal analysis, mass change, and visual observation. It was observed that the as fabricated samples and the reduced samples all retained their zinc gettering capacity while samples in the "as-oxidized" condition exhibited losses in zinc gettering capacity. Over the range of conditions tested, i.e., composition, oxidation temperature, and reduction temperature, no particular sample composition appeared better. Samples reduced at 350{degree}C exhibited the greatest zinc capacity, although there were some testing anomalies associated with these samples. This work clearly demonstrated that the zinc gettering was not adversely affected by exposure to simulated process conditions and a full scale lithium and zinc trap should be fabricated for testing in the Tritium Extraction Facility.

Korinko, P.; Golyski, M.

2013-11-01T23:59:59.000Z

402

Electrode with transparent series resistance for uniform switching of optical modulation devices  

DOE Patents [OSTI]

Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

Tench, D. Morgan (Camarillo, CA); Cunningham, Michael A. (Thousand Oaks, CA); Kobrin, Paul H. (Newbury Park, CA)

2008-01-08T23:59:59.000Z

403

Oxidative Tritium Decontamination System  

DOE Patents [OSTI]

The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

2006-02-07T23:59:59.000Z

404

Controlled CO preferential oxidation  

DOE Patents [OSTI]

Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

Meltser, M.A.; Hoch, M.M.

1997-06-10T23:59:59.000Z

405

ADVANCED OXIDATION PROCESS  

SciTech Connect (OSTI)

The removal of recalcitrant sulfur species, dibenzothiophene and its derivatives, from automotive fuels is an integral component in the development of cleaner burning and more efficient automobile engines. Oxidative desulfurization (ODS) wherein the dibenzothiophene derivative is converted to its corresponding sulfoxide and sulfone is an attractive approach to sulfur removal because the oxidized species are easily extracted or precipitated and filtered from the hydrocarbon phase. Fe-TAML{reg_sign} activators of hydrogen peroxide (TAML is Tetra-Amido-Macrocyclic-Ligand) catalytically convert dibenzothiophene and its derivatives rapidly and effectively at moderate temperatures (50-60 C) and ambient pressure to the corresponding sulfoxides and sulfones. The oxidation process can be performed in both aqueous systems containing alcohols such as methanol, ethanol, or t-butanol, and in a two-phase hydrocarbon/aqueous system containing tert-butanol or acetonitrile. In the biphasic system, essentially complete conversion of the DBT to its oxidized products can be achieved using slightly longer reaction times than in homogeneous solution. Among the key features of the technology are the mild reaction conditions, the very high selectivity where no over oxidation of the sulfur compounds occurs, the near stoichiometric use of hydrogen peroxide, the apparent lack of degradation of sensitive fuel components, and the ease of separation of oxidized products.

Dr. Colin P. Horwitz; Dr. Terrence J. Collins

2003-11-04T23:59:59.000Z

406

Cerium Oxide Coating for Oxidation Reduction  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation SitesStanding Friedel Waves,TheoryParliament'v0,MixturesCerium Oxide

407

REDUCTION AND SEQUESTRATION OF PERTECHNETATE TO TECHNETIUM DIOXIDE AND PROTECTION FROM RE-OXIDATION  

SciTech Connect (OSTI)

This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-I0S simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mobile +7 state under acidic or oxygenated conditions within the tested period of time (6 weeks). Previous work indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table 1 shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit.

DUNCAN JB; JOHNSON JM; MOORE WP; HAGERTY KJ; RHODES RN; MOORE RC

2012-07-11T23:59:59.000Z

408

Strong Sulfur Binding with Conducting Magneli-Phase TinO2n-1 Nanomaterials for Improving Lithium-Sulfur Batteries  

E-Print Network [OSTI]

will go through a series of soluble intermediate higher-order polysulfides (Li2S8, Li2S6, and Li2S4 of Li2S2, Li2S, and sulfur.6-8 In order to solve these challenges, there have been recent developmentsStrong Sulfur Binding with Conducting Magneli-Phase TinO2n-1 Nanomaterials for Improving Lithium-Sulfur

Cui, Yi

409

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

1999-01-01T23:59:59.000Z

410

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

2001-01-01T23:59:59.000Z

411

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-17T23:59:59.000Z

412

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-24T23:59:59.000Z

413

Bifacial solar cell with SnS absorber by vapor transport deposition  

SciTech Connect (OSTI)

The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

Wangperawong, Artit [Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Faculty of Engineering, King Mongkut's University of Technology Thonburi, Bangkok 10140 (Thailand); Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F., E-mail: sbent@stanford.edu [Stanford University, Stanford, California 94305 (United States)

2014-10-27T23:59:59.000Z

414

Molecular water oxidation catalyst  

DOE Patents [OSTI]

A dimeric composition of the formula: ##STR1## wherein L', L", L'", and L"" are each a bidentate ligand having at least one functional substituent, the ligand selected from bipyridine, phenanthroline, 2-phenylpyridine, bipyrimidine, and bipyrazyl and the functional substituent selected from carboxylic acid, ester, amide, halogenide, anhydride, acyl ketone, alkyl ketone, acid chloride, sulfonic acid, phosphonic acid, and nitro and nitroso groups. An electrochemical oxidation process for the production of the above functionally substituted bidentate ligand diaqua oxo-bridged ruthenium dimers and their use as water oxidation catalysts is described.

Gratzel, Michael (St. Sulpice, CH); Munavalli, Shekhar (Bel Air, MD); Pern, Fu-Jann (Lakewood, CO); Frank, Arthur J. (Lakewood, CO)

1993-01-01T23:59:59.000Z

415

Tetraalklylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

1998-10-06T23:59:59.000Z

416

Tetraalykylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z (n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

1998-01-01T23:59:59.000Z

417

Nanostructured transition metal oxides useful for water oxidation catalysis  

DOE Patents [OSTI]

The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

Frei, Heinz M; Jiao, Feng

2013-12-24T23:59:59.000Z

418

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL  

E-Print Network [OSTI]

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL CELLS Dynamic Simulation Approach Modular Approach: Individual simulation modules for each fuel cell type Tubular SOFC Planar SOFC MCFC PEM Reformer Slow pressure transients #12;Fuel Cell Assumptions H2 electrochemically oxidized only CO consumed

Mease, Kenneth D.

419

Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide  

E-Print Network [OSTI]

Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide Jessica Whalen, Oscar Marin Flores, Su University INTRODUCTION Energy consumption continues to skyrocket worldwide. Biodiesel is a renewable fuel as potential feedstock in solid oxide fuel cells. Petroleum based fuels become scarcer daily, and biodiesel

Collins, Gary S.

420

Highly oxidized superconductors  

DOE Patents [OSTI]

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed.

Morris, Donald E. (Kensington, CA)

1994-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Highly oxidized superconductors  

DOE Patents [OSTI]

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

Morris, D.E.

1994-09-20T23:59:59.000Z

422

Optically transparent yttrium oxide  

SciTech Connect (OSTI)

A body is described comprising at least 99.9% yttrium oxide having a density of at least 99% of theoretically density, a sample of the body having a in-line transmission of at least 73%, over a wavelength range of 2-5 microns with the sample having a thickness of 0.375 inches.

Hartnett, T.; Greenberg, M.; Gentilman, R.L.

1988-08-02T23:59:59.000Z

423

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2012-09-11T23:59:59.000Z

424

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2014-05-20T23:59:59.000Z

425

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2013-04-16T23:59:59.000Z

426

REVIEW OF PLUTONIUM OXIDATION LITERATURE  

SciTech Connect (OSTI)

A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles (<15 {micro}m), moderately sized particles (15 < x < 250 {micro}m) and large particles (> 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

Korinko, P.

2009-11-12T23:59:59.000Z

427

THE MICROSTRUCTURAL LOCATION OF THE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR  

E-Print Network [OSTI]

I I ntroduct Ion Metal oxide varistors are ceramic semi-SECTION M METAL' OXIDE PHASE IN A ZINC OXIDE VARISTORTHE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR

Clarke, D. E

2011-01-01T23:59:59.000Z

428

4, 23012331, 2004 Nitrogen oxides  

E-Print Network [OSTI]

of nitrogen oxide (NO), nitrogen dioxide (NO2) and ozone (O3) were performed simul- taneously with aerosolACPD 4, 2301­2331, 2004 Nitrogen oxides measurements in an Amazon site A. M. Cordova et al. Title and Physics Discussions Nitrogen oxides measurements in an Amazon site and enhancements associated with a cold

Paris-Sud XI, Université de

429

Doped palladium containing oxidation catalysts  

DOE Patents [OSTI]

A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

Mohajeri, Nahid

2014-02-18T23:59:59.000Z

430

Graphene and Graphene Oxide: Biofunctionalization and Applications...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Graphene and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Abstract: Graphene...

431

Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells  

SciTech Connect (OSTI)

Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K. [Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF (United Kingdom); Taylor, A. A.; Mendis, B. G.; Bowen, L. [G. J. Russell Microscopy Facility, University of Durham, South Road, Durham DH1 3LE (United Kingdom)

2014-02-03T23:59:59.000Z

432

Poly (p-phenyleneacetylene) light-emitting diodes  

DOE Patents [OSTI]

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

1994-10-04T23:59:59.000Z

433

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes  

DOE Patents [OSTI]

Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

1994-08-02T23:59:59.000Z

434

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect (OSTI)

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Hgskola AB, Gteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

435

Doping stability and opto-electronic performance of CVD graphene on transparent flexible substrates  

E-Print Network [OSTI]

-dimensional honeycomb of single carbon atoms, has a myriad of impressive, novel optical and electrical properties [1, 2]. As such, it has attracted much attention as a promising material to complement indium tin oxide in large area transparent electrodes for many... transferred to laminate and PET substrates (ATI, Unicam UV2). The transmittance (550 nm) of graphene on PET and on laminate was 10% and 12% lower than the as-received PET and laminate, respectively. The high optical absorption suggests around four layer...

Kang, Moon Hyo; Milne, William I.; Cole, Matthew T.

2014-07-15T23:59:59.000Z

436

Cyclic voltammetric study of Co-Ni-Fe alloys electrodeposition in sulfate medium  

SciTech Connect (OSTI)

Electrochemical technique has been used to study the electrodeposition of cobalt, nickel, iron and Co-Ni-Fe alloy on indium tin oxide (ITO) coated glass substrate. To obtain the nucleation mechanism, cyclic voltammetry is used to characterize the Co-Ni-Fe system. The scanning rate effect on the deposition process was investigated. Deposition of single metal occurs at potential values more positive than that estimated stability potential. Based on the cyclic voltammetry results, the electrodeposition of cobalt, nickel, iron and Co-Ni-Fe alloy clearly show that the process of diffusion occurs is controlled by the typical nucleation mechanism.

Hanafi, I.; Daud, A. R.; Radiman, S. [Material Science Program, School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor (Malaysia)

2013-11-27T23:59:59.000Z

437

Photoresponse of Tb{sup 3+} doped phosphosilicate thin films  

SciTech Connect (OSTI)

Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

1997-09-01T23:59:59.000Z

438

Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films  

E-Print Network [OSTI]

We experimentally demonstrate efficient third harmonic generation from an indium tin oxide (ITO) nanofilm (lambda/42 thick) on a glass substrate for a pump wavelength of 1.4 um. A conversion efficiency of 3.3x10^-6 is achieved by exploiting the field enhancement properties of the epsilon-near-zero (ENZ) mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

Luk, Ting S; Liu, Sheng; Keeler, Gordon A; Prasankumar, Rohit P; Vincenti, Maria A; Scalora, Michael; Sinclair, Michael B; Campione, Salvatore

2015-01-01T23:59:59.000Z

439

Poly (p-phenyleneneacetylene) light-emitting diodes  

DOE Patents [OSTI]

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA); Barton, Thomas J. (Ames, IA); Vardeny, Zeev V. (Salt Lake City, UT)

1994-10-04T23:59:59.000Z

440

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes  

DOE Patents [OSTI]

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA)

1994-08-02T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures  

SciTech Connect (OSTI)

Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.

Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.

2010-01-01T23:59:59.000Z

442

Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures  

SciTech Connect (OSTI)

Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organic light emitting diode displays.

Fakhri, M.; Goerrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-St. 21, 42119 Wuppertal (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt Braunschweig, Bundesallee 100, 38116 Braunschweig (Germany)

2011-09-19T23:59:59.000Z

443

Millisecond Oxidation of Alkanes  

Broader source: Energy.gov [DOE]

This factsheet describes a project whose goal is to commercialize a production process for propylene and acrylic acid from propane using a catalytic auto-thermal oxydehydrogenation process operating at short contact times. Auto-thermal oxidation for conversion of propane to propylene and acrylic acid promises energy savings of 20 trillion Btu per year by 2020. In addition to reducing energy consumption, this technology can reduce manufacturing costs by up to 25 percent, and reduce a variety of greenhouse gas emissions.

444

Oxidative stress and oxidative damage in chemical carcinogenesis  

SciTech Connect (OSTI)

Reactive oxygen species (ROS) are induced through a variety of endogenous and exogenous sources. Overwhelming of antioxidant and DNA repair mechanisms in the cell by ROS may result in oxidative stress and oxidative damage to the cell. This resulting oxidative stress can damage critical cellular macromolecules and/or modulate gene expression pathways. Cancer induction by chemical and physical agents involves a multi-step process. This process includes multiple molecular and cellular events to transform a normal cell to a malignant neoplastic cell. Oxidative damage resulting from ROS generation can participate in all stages of the cancer process. An association of ROS generation and human cancer induction has been shown. It appears that oxidative stress may both cause as well as modify the cancer process. Recently association between polymorphisms in oxidative DNA repair genes and antioxidant genes (single nucleotide polymorphisms) and human cancer susceptibility has been shown.

Klaunig, James E., E-mail: jklauni@indiana.edu; Wang Zemin; Pu Xinzhu; Zhou Shaoyu

2011-07-15T23:59:59.000Z

445

Khi i hc k thut thng tin (Undergraduateds School of IES) http://www.uec.ac.jp/ies/faculty/index.html (Jpns)  

E-Print Network [OSTI]

lng Lng t hc Vt liu hc Cht bán dn - Siêu bán dn Thit b in t - Thit b quang in t - T - Vt liu quang Thông tin quang Vt lý rn Sinh hc - Thn kinh hc H thng sinh hc o lng sinh hc Tên thng qun lý doanh nghip... nh hng ngh nghip: K s h thng, K s qun lý sn xut - cht lng sn phm, Chuyên

Yanai, Keiji

446

Preparation, characterization and applications of novel carbon and nitrogen codoped TiO{sub 2} nanoparticles from annealing TiN under CO atmosphere  

SciTech Connect (OSTI)

Graphical abstract: Carbon and nitrogen codoped TiO{sub 2} nanoparticles were firstly fabricated by calcining TiN powder under CO atmosphere at different temperatures between 400 and 600 C, both the improved photocatalytic activity for degradation of methylene blue and enhanced photovoltaic performance for dye sensitized solar cells were demonstrated. - Highlights: CN-codoped TiO{sub 2} nanoparticles were prepared by calcining TiN under CO atmosphere. More visible light response was confirmed by UVvis DRS and photocatalytic results. Enhanced conversion efficiency was observed for the DSSCs from CN-TiO{sub 2} photoanode. CN-codoping played an important role to improve the photocatalytic performance. - Abstract: Carbon and nitrogen codoped titania (CN-TiO{sub 2}) nanoparticles were fabricated by calcining titanium nitride (TiN) nanoparticles under carbon monoxide (CO) atmosphere at four different temperatures in a range of 400600 C. The as-prepared samples were characterized with X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscopy (XPS). Enhanced light absorption in both the UV and visible light region was observed for the resulted CN-TiO{sub 2} nanoparticles in ultraviolet-visible diffuse reflectance spectroscopy (UVvis DRS). Improved photocatalytic activity toward the degradation of methylene blue by the CN-TiO{sub 2} nanoparticles was demonstrated under UV and visible light, respectively. The highest degradation rate was achieved for CN-TiO{sub 2} nanoparticles (13%) compared to N-TiO{sub 2} (10%) and the commercial P25 (5%) under visible light illumination for 40 min. Furthermore, the improved photocatalytic activity of CN-TiO{sub 2} was also confirmed by the degradation of colorless resorcinol under UVvis light irradiation. Dye-sensitized solar cells (DSSCs) were fabricated using P25, N-TiO{sub 2} and CN-TiO{sub 2} photoanodes, respectively. The highest conversion efficiency of 3.31% was achieved by the DSSCs based on the CN-TiO{sub 2} photoanodes in comparison with the commercial P25 (1.61%) and N-TiO{sub 2} (2.44%) photoanodes. This work demonstrates that thermal treatment of TiN nanoparticles under CO atmosphere has shown to be a rapid, direct and clean approach to synthesize photocatalysts with enhanced photocatalytic and photovoltaic performance.

Sun, Mingxuan; Song, Peng; Li, Jing; Cui, Xiaoli, E-mail: xiaolicui@fudan.edu.cn

2013-10-15T23:59:59.000Z

447

Oxidation resistant alloys, method for producing oxidation resistant alloys  

DOE Patents [OSTI]

A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

Dunning, John S.; Alman, David E.

2002-11-05T23:59:59.000Z

448

Zinc oxide varistors and/or resistors  

DOE Patents [OSTI]

Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

Arnold, Jr., Wesley D. (Oak Ridge, TN); Bond, Walter D. (Knoxville, TN); Lauf, Robert J. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

449

ARM - Oxides of Nitrogen  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUC : XDCResearchWarmingMethane BackgroundFacilityOther Aircraft CampaignsOxides

450

Enhanced Thermal Conductivity Oxide Fuels  

SciTech Connect (OSTI)

the purpose of this project was to investigate the feasibility of increasing the thermal conductivity of oxide fuels by adding small fractions of a high conductivity solid phase.

Alvin Solomon; Shripad Revankar; J. Kevin McCoy

2006-01-17T23:59:59.000Z

451

Continuous lengths of oxide superconductors  

DOE Patents [OSTI]

A layered oxide superconductor prepared by depositing a superconductor precursor powder on a continuous length of a first substrate ribbon. A continuous length of a second substrate ribbon is overlaid on the first substrate ribbon. Sufficient pressure is applied to form a bound layered superconductor precursor powder between the first substrate ribbon and the second substrate ribbon. The layered superconductor precursor is then heat treated to establish the oxide superconducting phase. The layered oxide superconductor has a smooth interface between the substrate and the oxide superconductor.

Kroeger, Donald M. (Knoxville, TN); List, III, Frederick A. (Andersonville, TN)

2000-01-01T23:59:59.000Z

452

Buried oxide layer in silicon  

DOE Patents [OSTI]

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

2001-01-01T23:59:59.000Z

453

Operation of staged membrane oxidation reactor systems  

SciTech Connect (OSTI)

A method of operating a multi-stage ion transport membrane oxidation system. The method comprises providing a multi-stage ion transport membrane oxidation system with at least a first membrane oxidation stage and a second membrane oxidation stage, operating the ion transport membrane oxidation system at operating conditions including a characteristic temperature of the first membrane oxidation stage and a characteristic temperature of the second membrane oxidation stage; and controlling the production capacity and/or the product quality by changing the characteristic temperature of the first membrane oxidation stage and/or changing the characteristic temperature of the second membrane oxidation stage.

Repasky, John Michael

2012-10-16T23:59:59.000Z

454

Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications  

E-Print Network [OSTI]

Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.Tubular Solid Oxide Fuel Cell Technology, U.S. Department ofOxide Films for Solid Oxide Fuel Cell Applications by Jason

Nicholas, Jason.D.

2007-01-01T23:59:59.000Z

455

Metal oxide films on metal  

DOE Patents [OSTI]

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

1995-01-01T23:59:59.000Z

456

METHANE OXIDATION (AEROBIC) Helmut Brgmann  

E-Print Network [OSTI]

METHANE OXIDATION (AEROBIC) Helmut Bürgmann Eawag, Swiss Federal Institute of Aquatic Science and Technology, Kastanienbaum, Switzerland Synonyms Methanotrophy Definition Methane oxidation is a microbial metabolic process for energy generation and carbon assimilation from methane that is carried out by specific

Wehrli, Bernhard

457

Metal-insulator transitions in IZO, IGZO, and ITZO films  

SciTech Connect (OSTI)

In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the IoffeRegel criterion. We found that the MIT occurs in a narrow range between k{sub F}??=?0.13 and k{sub F}??=?0.25, where k{sub F} and ? are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ?(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and EfrosShklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}???T{sub Mott}{sup 2/3}.

Makise, Kazumasa, E-mail: makise@nict.go.jp [National Institute of Information and Communications Technology, Kobe 651-2492 (Japan); Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju [Department of Physics, Kyushu University, Fukuoka 810-8560 (Japan); Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki [Central Research Laboratories, Idemitsu Kosan Co. Ltd, Chiba 299-0293 (Japan)

2014-10-21T23:59:59.000Z

458

Ultra Supercritical Steamside Oxidation  

SciTech Connect (OSTI)

Ultra supercritical (USC) power plants offer the promise of higher efficiencies and lower emissions, which are goals of the U.S. Department of Energy's Advanced Power Systems Initiatives. Most current coal power plants in the U.S. operate at a maximum steam temperature of 538 C. However, new supercritical plants worldwide are being brought into service with steam temperatures of up to 620 C. Current Advanced Power Systems goals include coal generation at 60% efficiency, which require steam temperatures of up to 760 C. This research examines the steamside oxidation of advanced alloys for use in USC systems, with emphasis placed on alloys for high- and intermediate-pressure turbine sections. Initial results of this research are presented.

Holcomb, Gordon R.; Cramer, Stephen D.; Covino, Bernard S., Jr.; Bullard, Sophie J.; Ziomek-Moroz, Malgorzata

2005-01-01T23:59:59.000Z

459

Detection of oxidation in human serum lipoproteins  

E-Print Network [OSTI]

A method for the oxidation of lipoproteins in vitro was developed using the free radical initiator, 2,2?-azobis-(2-amidinopropane) dihydrochloride (AAPH). Following in vitro oxidation, the susceptibility to oxidation of the serum samples...

Myers, Christine Lee

2006-04-12T23:59:59.000Z

460

Ethanol oxidation on metal oxide-supported platinum catalysts  

SciTech Connect (OSTI)

Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on the standard three-way catalysts, the conversion of unburned ethanol is low because both ethanol and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of stoves that burn ethanol molecules and their partially oxidized derivatives to the final products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of stoves that burn ethanol molecules and their partially oxidized derivatives to the final products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.

L. M. Petkovic 090468; Sergey N. Rashkeev; D. M. Ginosar

2009-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Chapter 6: Thallium-Oxide Superconductors  

SciTech Connect (OSTI)

This chapter has 2 sections titled: (1) Spray-Deposited, TI-Oxide Films, and (2) Electrodeposited Ti-Oxide Superconductors.

Bhattacharya, R. N.

2010-01-01T23:59:59.000Z

462

Precise Application of Transparent Conductive Oxide Coatings...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Precise Application of Transparent Conductive Oxide Coatings for Flat Panel Displays and Photovoltaic Cells Technology available for licensing: New transparent conducting oxide...

463

New manganese catalyst for light alkane oxidation  

DOE Patents [OSTI]

Aluminophosphates containing manganese in the structural framework are employed for the oxidation of alkanes, for example the vapor phase oxidation of methane to methanol.

Durante, Vincent A. (West Chester, PA); Lyons, James E. (Wallingford, PA); Walker, Darrell W. (Visalia, CA); Marcus, Bonita K. (Radnor, PA)

1994-01-01T23:59:59.000Z

464

Crystallographic parameters and electro-optical constants in ITO thin films  

SciTech Connect (OSTI)

Indium tin oxide thin films were deposited onto soda lime glass substrates using an e-beam evaporation system. In order to improve the structural, electrical and optical properties, the films were annealed at 450 deg. C and 500 deg. C in vacuum for 1 h. X-ray diffractions of samples were analyzed by Rietveld refinement and Warren-Averbach methods. By application of Levenberg-Marquardt least square method, the experimental transmittance data were fitted completely with the transmittance data calculated via a combination of modified Drude and Forouhi-Bloomer models. Focusing on the results, it was shown that the samples had a nanosize crystallite and enhancement of the annealing temperature resulted in an increase in the conductivity, carrier concentration, lattice parameter, crystallite size and micro-strain. However, it was found that the defects were preferentially accumulated along grain boundaries in sample annealed at lower temperature. Moreover, the finding revealed that conductivity of the samples was dominated by intra-grain in indium tin oxide films. Furthermore, increasing annealing temperature resulted in the orientation in < 111> crystal texture and also brought in an additional Burstein-Moss shift.

Torkaman, N.M. [Dept. of Science, Karaj branch, Islamic Azad University, P.O. Box 31485-313, Karaj (Iran, Islamic Republic of); Ganjkhanlou, Y.; Kazemzad, M. [Materials and Energy Research Center (MERC), P.O. Box 14155-4777, Tehran (Iran, Islamic Republic of); Dabaghi, H.H., E-mail: hm_hadad@yahoo.com [Dept. of Science, Karaj branch, Islamic Azad University, P.O. Box 31485-313, Karaj (Iran, Islamic Republic of); Keyanpour-Rad, M. [Materials and Energy Research Center (MERC), P.O. Box 14155-4777, Tehran (Iran, Islamic Republic of)

2010-03-15T23:59:59.000Z

465

Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O  

SciTech Connect (OSTI)

Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O at deposition temperatures between 90 and 270?C on Si{sub 3}N{sub 4}, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi{sub 2}O{sub 3} films deposited at 150?C have a linear growth per cycle of 0.039?nm/cycle, density of 8.3?g/cm{sup 3}, band gap of approximately 2.9?eV, low carbon content, and show the ? phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210?C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.

Austin, Dustin Z., E-mail: austind@eecs.oregonstate.edu; Conley, John F., E-mail: jconley@eecs.oregonstate.edu [Department of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331 (United States); Allman, Derryl; Price, David; Hose, Sallie [ON Semiconductor, Technology Development, Gresham, Oregon 97030 (United States); Saly, Mark [SAFC Hitech, Haverhill, Massachusetts 01832 (United States)

2014-01-15T23:59:59.000Z

466

Nanostructured Metal Oxide Anodes (Presentation)  

SciTech Connect (OSTI)

This summarizes NREL's FY09 battery materials research activity in developing metal oxide nanostructured anodes to enable high-energy, durable and affordable li-ion batteries for HEVs and PHEVs.

Dillon, A. C.; Riley, L. A.; Lee, S.-H.; Kim, Y.-H.; Ban, C.; Gillaspie, D. T.; Pesaran, A.

2009-05-01T23:59:59.000Z

467

Thermal oxidation procedure PREPARATION........................................................................................................................................... 2  

E-Print Network [OSTI]

procedure - 2 - Preparation. The preparation procedure sets up the power, gas supplies, cooling water, (DI to check all the supplies. Cooling water Gas supplies Routing DI water for wet oxidation We start........................................................................................................................................... 2 Step 1 Turn on the cooling water

Hochberg, Michael

468

Oxides having high energy densities  

DOE Patents [OSTI]

Certain disclosed embodiments generally relate to oxide materials having relatively high energy and/or power densities. Various aspects of the embodiments are directed to oxide materials having a structure B.sub.i(M.sub.jY.sub.k)O.sub.2, for example, a structure Li.sub.j(Ni.sub.jY.sub.k)O.sub.2 such as Li(Ni.sub.0.5Mn.sub.0.5)O.sub.2. In this structure, Y represents one or more atoms, each independently selected from the group consisting of alkaline earth metals, transition metals, Group 14 elements, Group 15, or Group 16 elements. In some embodiments, such an oxide material may have an O3 crystal structure, and/or a layered structure such that the oxide comprises a plurality of first, repeating atomic planes comprising Li, and a plurality of second, repeating atomic planes comprising Ni and/or Y.

Ceder, Gerbrand; Kang, Kisuk

2013-09-10T23:59:59.000Z

469

The catalytic oxidation of propane  

E-Print Network [OSTI]

THE CATALYTIC OXIDATION OP PROPANE A Thesis By Charles Frederick Sandersont * * June 1949 Approval as to style and content recommended: Head of the Department of Chemical Engineering THE CATALYTICi OXIDATTON OF PROPANE A Thesis By Charles... Frederick ;Sandersonit * June 1949 THE CATALYTIC OXIDATION OP PROPANE A Thesis Submitted to the Faculty of the Agricultural and Mechanical College of Texas in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Major...

Sanderson, Charles Frederick

1949-01-01T23:59:59.000Z

470

Metal oxide nanostructures with hierarchical morphology  

DOE Patents [OSTI]

The present invention relates generally to metal oxide materials with varied symmetrical nanostructure morphologies. In particular, the present invention provides metal oxide materials comprising one or more metallic oxides with three-dimensionally ordered nanostructural morphologies, including hierarchical morphologies. The present invention also provides methods for producing such metal oxide materials.

Ren, Zhifeng (Newton, MA); Lao, Jing Yu (Saline, MI); Banerjee, Debasish (Ann Arbor, MI)

2007-11-13T23:59:59.000Z

471

Millisecond Oxidation of Alkanes  

SciTech Connect (OSTI)

This project was undertaken in response to the Department of Energy's call to research and develop technologies 'that will reduce energy consumption, enhance economic competitiveness, and reduce environmental impacts of the domestic chemical industry.' The current technology at the time for producing 140 billion pounds per year of propylene from naphtha and Liquified Petroleum Gas (LPG) relied on energy- and capital-intensive steam crackers and Fluidized Catalytic Cracking (FCC) units. The propylene is isolated from the product stream in a costly separation step and subsequently converted to acrylic acid and other derivatives in separate production facilities. This project proposed a Short Contact Time Reactor (SCTR)-based catalytic oxydehydrogenation process that could convert propane to propylene and acrylic acid in a cost-effective and energy-efficient fashion. Full implementation of this technology could lead to sizeable energy, economic and environmental benefits for the U. S. chemical industry by providing up to 45 trillion BTUs/year, cost savings of $1.8 billion/year and a combined 35 million pounds/year reduction in environmental pollutants such as COx, NOx, and SOx. Midway through the project term, the program directive changed, which approval from the DOE and its review panel, from direct propane oxidation to acrylic acid at millisecond contact times to a two-step process for making acrylic acid from propane. The first step was the primary focus, namely the conversion of propane to propylene in high yields assisted by the presence of CO2. The product stream from step one was then to be fed directly into a commercially practiced propylene-to-acrylic acid tandem reactor system.

Scott Han

2011-09-30T23:59:59.000Z

472

Development of a Zirconia-Based Electrochemical Sensor for the Detection of Hydrogen in Air  

SciTech Connect (OSTI)

Mixed potential sensors utilizing a machined, dense indium-tin oxide working electrode (In{sub 2}O{sub 3}:SnO{sub 2}; 90%:10%), a Pt wire counter electrode, and porous YSZ electrolyte were prepared using ceramic tape casting methods. The response of these devices to hydrogen concentrations up to 2% in air were studied from 600 to 740 C. The sensor response exhibited a reversible behavior and a fast response time with sensitivity increasing with decreasing temperature. GC analysis confirmed significant heterogeneous oxidation of the H{sub 2} on heated furnace tube wall surfaces thus driving sensor response at H{sub 2} concentrations greater than a few hundred ppm. The transition to a cold wall, miniature platform heater significantly reduced hydrogen oxidation although some flow rate dependence remains.

Brosha, E; Mukundan, R; Lujan, R; Garzon, F; Woo, L; Worsley, M; Glass, B

2008-07-16T23:59:59.000Z

473

Transparent conducting oxides and production thereof  

SciTech Connect (OSTI)

Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

2014-06-10T23:59:59.000Z

474

Transparent conducting oxides and production thereof  

SciTech Connect (OSTI)

Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Gessert, Timothy A; Yoshida, Yuki; Coutts, Timothy J

2014-05-27T23:59:59.000Z

475

Developing TiAIN Coatings for Intermediate Temperature-Solid Oxide Fuel Cell Interconnect Applications  

SciTech Connect (OSTI)

TiN-type coatings have potential to be used as SOFC interconnect coatings SOFC because of their low resistance and high temperature stability. In this research, various (Ti,Al)N coatings were deposited on stainless steels by filtered-arc method. ASR and XRD tests were conducted on these coatings, and SEM/EDAX analysis were conducted after ASR and XRD tests. SEM/EDAX analyses show that (Ti,Al)N remains stable at temperature up to 700C. It is also indicated that Al has beneficial effect on the stability of TiN type coatings. At 900C, (Ti-30Al)N is fully oxidized and some of (Ti-50Al)N coating still remains as nitride. The analyses on cross-sectional samples show that these coatings are effective barrier to the Cr migration. In summary, (Ti.Al)N coatings are good candidates for the SOFC interconnect applications at 700C. The future directions of this research are to improve the stability of these coatings by alloy-doping and to develop multi-layer coatings.

Liu, X. (West Virginia University); Johnson, C.D.; Li, C. (West Virginia University); Xu, J. (West Virginia University); Cross, C.

2007-02-01T23:59:59.000Z

476

Development of a cost effective surface-patterned transparent conductive coating as top-contact of light emitting diodes  

SciTech Connect (OSTI)

Sol-gel process has been used to form indium zinc oxide films using an optimized combination of zinc to indium concentration in the precursor solutions. Different structures, like one (1D) and two-dimensional (2D) gratings and diffractive optical elements (DOEs) in the form of Fresnel lens are fabricated on the film surface of proposed top metal contact of LED by imprint soft lithography technique. These structures can enhance the LED's light extraction efficiency (LEE) or can shape the output beam pattern, respectively. Several characterizations are done to analyze the material and structural properties of the films. The presence of 1D and 2D gratings as well as DOEs is confirmed from field emission scanning electron and atomic force microscopes analyses. Although, X-ray diffraction shows amorphous nature of the film, but transmission electron microscopy study shows that it is nano crystalline in nature having fine particles (?8?nm) of hexagonal ZnO. Shrinkage behaviour of gratings as a function of curing temperature is explained by Fourier transform infra-red spectra and thermo gravimetric-differential thermal analysis. The visible transmission and sheet resistance of the sample are found comparable to tin doped indium oxide (ITO). Therefore, the film can compete as low cost substitute of ITO as top metal contact of LEDs.

Haldar, Arpita [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India); Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bera, Susanta; Jana, Sunirmal, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bhattacharya, Kallol; Chakraborty, Rajib, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India)

2014-05-21T23:59:59.000Z

477

Solid oxide electrochemical reactor science.  

SciTech Connect (OSTI)

Solid-oxide electrochemical cells are an exciting new technology. Development of solid-oxide cells (SOCs) has advanced considerable in recent years and continues to progress rapidly. This thesis studies several aspects of SOCs and contributes useful information to their continued development. This LDRD involved a collaboration between Sandia and the Colorado School of Mines (CSM) ins solid-oxide electrochemical reactors targeted at solid oxide electrolyzer cells (SOEC), which are the reverse of solid-oxide fuel cells (SOFC). SOECs complement Sandia's efforts in thermochemical production of alternative fuels. An SOEC technology would co-electrolyze carbon dioxide (CO{sub 2}) with steam at temperatures around 800 C to form synthesis gas (H{sub 2} and CO), which forms the building blocks for a petrochemical substitutes that can be used to power vehicles or in distributed energy platforms. The effort described here concentrates on research concerning catalytic chemistry, charge-transfer chemistry, and optimal cell-architecture. technical scope included computational modeling, materials development, and experimental evaluation. The project engaged the Colorado Fuel Cell Center at CSM through the support of a graduate student (Connor Moyer) at CSM and his advisors (Profs. Robert Kee and Neal Sullivan) in collaboration with Sandia.

Sullivan, Neal P. (Colorado School of Mines, Golden, CO); Stechel, Ellen Beth; Moyer, Connor J. (Colorado School of Mines, Golden, CO); Ambrosini, Andrea; Key, Robert J. (Colorado School of Mines, Golden, CO)

2010-09-01T23:59:59.000Z

478

Modeling of surface oxidation and oxidation induced damage in metal matrix composites  

E-Print Network [OSTI]

Surface oxidation in metal matrix composites (MMC's) is modeled by Fickian diffusion of oxygen in both the oxide layer and metal matrix. The oxidation process and the resulting immobilized oxygen at the interface is accounted for by the introduction...

Ma, Xinzheng

1995-01-01T23:59:59.000Z

479

Ductility Enhancement of Molybdenum Phase by Nano-sizedd Oxide Dispersions  

SciTech Connect (OSTI)

The present research is focused on ductility enhancement of molybdenum (Mo) alloys by adding nano-sized oxide particles to the alloy system. The research approach includes: (1) determination of microscopic mechanisms responsible for the macroscopic ductility enhancement effects through atomistic modeling of the metal-ceramic interface; (2) subsequent computer simulation-aided optimization of composition and nanoparticle size of the dispersion for improved performance; (3) synthesis and characterization of nanoparticle dispersion following the guidance from atomistic computational modeling analyses (e.g., by processing a small sample of Mo alloy for evaluation); and (4) experimental testing of the mechanical properties to determine optimal ductility enhancement.Through atomistic modeling and electronic structure analysis using full-potential linearized muffin-tin orbital (FP-LMTO) techniques, research to date has been performed on a number of selected chromium (Cr) systems containing nitrogen (N) and/or magnesium oxide (MgO) impurities. The emphasis has been on determining the properties of the valence electrons and the characteristics of the chemical bonds they formed. It was found that the brittle/ductile behavior of this transitional metal system is controlled by the relative population of valence charges: bonds formed by s valence electrons yield metallic, ductile behavior, whereas bonds formed by d valence electrons lead to covalent, brittle behavior. The presence of valence bands from impurities also affects the metal bonding, thereby explaining the detrimental and beneficial effects induced by the inclusion of N impurities and MgO dispersions. These understandings are useful for optimizing ductility enhancement effects on the dispersion materials.

Bruce Kang

2008-07-31T23:59:59.000Z

480

Aromatic-radical oxidation chemistry  

SciTech Connect (OSTI)

The research effort has focussed on discovering an explanation for the anomalously high CO{sub 2} concentrations observed early in the reaction sequence of the oxidation of cyclopentadiene. To explain this observation, a number of plausible mechanisms have been developed which now await experimental verification. One experimental technique for verifying mechanisms is to probe the reacting system by perturbing the radical concentrations. Two forms of chemical perturbation of the oxidation of cyclopentadiene were begun during this past year--the addition of NO{sub 2} and CO to the reacting mixture.

Glassman, I.; Brezinsky, K. [Princeton Univ., NJ (United States)

1993-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "indium tin oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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481

Solid oxide fuel cell generator  

DOE Patents [OSTI]

A solid oxide fuel cell generator has a pair of spaced apart tubesheets in a housing. At least two intermediate barrier walls are between the tubesheets and define a generator chamber between two intermediate buffer chambers. An array of fuel cells have tubes with open ends engaging the tubesheets. Tubular, axially elongated electrochemical cells are supported on the tubes in the generator chamber. Fuel gas and oxidant gas are preheated in the intermediate chambers by the gases flowing on the other side of the tubes. Gas leakage around the tubes through the tubesheets is permitted. The buffer chambers reentrain the leaked fuel gas for reintroduction to the generator chamber.

Draper, R.; George, R.A.; Shockling, L.A.

1993-04-06T23:59:59.000Z

482

Hydrous metal oxide catalysts for oxidation of hydrocarbons  

SciTech Connect (OSTI)

This report describes work performed at Sandia under a CRADA with Shell Development of Houston, Texas aimed at developing hydrous metal oxide (HMO) catalysts for oxidation of hydrocarbons. Autoxidation as well as selective oxidation of 1-octene was studied in the presence of HMO catalysts based on known oxidation catalysts. The desired reactions were the conversion of olefin to epoxides, alcohols, and ketones, HMOs seem to inhibit autoxidation reactions, perhaps by reacting with peroxides or radicals. Attempts to use HMOs and metal loaded HMOs as epoxidation catalysts were unsuccessful, although their utility for this reaction was not entirely ruled out. Likewise, alcohol formation from olefins in the presence of HMO catalysts was not achieved. However, this work led to the discovery that acidified HMOs can lead to carbocation reactions of hydrocarbons such as cracking. An HMO catalyst containing Rh and Cu that promotes the reaction of {alpha}-olefins with oxygen to form methyl ketones was identified. Although the activity of the catalyst is relatively low and isomerization reactions of the olefin simultaneously occur, results indicate that these problems may be addressed by eliminating mass transfer limitations. Other suggestions for improving the catalyst are also made. 57 refs.

Miller, J.E.; Dosch, R.G.; McLaughlin, L.I. [Sandia National Labs., Albuquerque, NM (United States). Process Research Dept.

1993-07-01T23:59:59.000Z

483

Effects of Tungsten Oxide Addition on the Electrochemical Performance...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Tungsten Oxide Addition on the Electrochemical Performance of Nanoscale Tantalum Oxide-Based Electrocatalysts for Effects of Tungsten Oxide Addition on the Electrochemical...

484

MICROSTRUCTURE-PROPERTY RELATIONSHIPS OF A ZINC OXIDE VARISTOR MATERIAL  

E-Print Network [OSTI]

RELATIONSHIPS OF A ZINC OXIDE VARISTOR MATERIAL Pamelaresistors, and zinc oxide varistors are semiconductorRELATIONSHIPS OF A ZINC OXIDE VARISTOR MATERIAL CONTENTS

Williama, Pamela Louise

2011-01-01T23:59:59.000Z

485

Pre-Oxidized and Nitrided Stainless Steel Foil for Proton Exchange Membrane Fuel Cell Bipolar Plates: Part 2- Single-Cell Fuel Cell Evaluation of Stamped Plates  

SciTech Connect (OSTI)

Thermal (gas) nitridation of stainless steel alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant nitride containing surface layers (Cr{sub 2}N, CrN, TiN, V{sub 2}N, VN, etc.) of interest for fuel cells, batteries, and sensors. This paper presents results of proton exchange membrane (PEM) single-cell fuel cell studies of stamped and pre-oxidized/nitrided developmental Fe-20Cr-4V weight percent (wt.%) and commercial type 2205 stainless steel alloy foils. The single-cell fuel cell behavior of the stamped and pre-oxidized/nitrided material was compared to as-stamped (no surface treatment) 904L, 2205, and Fe-20Cr-4V stainless steel alloy foils and machined graphite of similar flow field design. The best fuel cell behavior among the alloys was exhibited by the pre-oxidized/nitrided Fe-20Cr-4V, which exhibited {approx}5-20% better peak power output than untreated Fe-20Cr-4V, 2205, and 904L metal stampings. Durability was assessed for pre-oxidized/nitrided Fe-20Cr-4V, 904L metal, and graphite plates by 1000+ h of cyclic single-cell fuel cell testing. All three materials showed good durability with no significant degradation in cell power output. Post-test analysis indicated no metal ion contamination of the membrane electrode assemblies (MEAs) occurred with the pre-oxidized and nitrided Fe-20Cr-4V or graphite plates, and only a minor amount of contamination with the 904L plates.

Toops, Todd J [ORNL; Brady, Michael P [ORNL; Tortorelli, Peter F [ORNL; Pihl, Josh A [ORNL; EstevezGenCell, Francisco [GenCell Corp; Connors, Dan [GenCell Corp; Garzon, Fernando [Los Alamos National Laboratory (LANL); Rockward, Tommy [Los Alamos National Laboratory (LANL); Gervasio, Don [Arizona State University; Kosaraju, S.H. [Arizona State University

2010-01-01T23:59:59.000Z

486

Formulations for iron oxides dissolution  

DOE Patents [OSTI]

A mixture of a di- or polyphosphonic acid and a reductant wherein each is present in a sufficient amount to provide a synergistic effect with respect to the dissolution of metal oxides and optionally containing corrosion inhibitors and pH adjusting agents.

Horwitz, Earl P. (Argonne, IL); Chiarizia, Renato (Argonne, IL)

1992-01-01T23:59:59.000Z

487

Perovskite catalysts for oxidative coupling  

DOE Patents [OSTI]

Perovskites of the structure A[sub 2]B[sub 2]C[sub 3]O[sub 10] are useful as catalysts for the oxidative coupling of lower alkane to heavier hydrocarbons. A is alkali metal; B is lanthanide or lanthanum, cerium, neodymium, samarium, praseodymium, gadolinium or dysprosium; and C is titanium.

Campbell, K.D.

1991-06-25T23:59:59.000Z

488

Perovskite catalysts for oxidative coupling  

DOE Patents [OSTI]

Perovskites of the structure A.sub.2 B.sub.2 C.sub.3 O.sub.10 are useful as catalysts for the oxidative coupling of lower alkane to heavier hydrocarbons. A is alkali metal; B is lanthanide or lanthanum, cerium, neodymium, samarium, praseodymium, gadolinium or dysprosium; and C is titanium.

Campbell, Kenneth D. (Charleston, WV)

1991-01-01T23:59:59.000Z

489

Solid oxide fuel cell generator  

DOE Patents [OSTI]

A solid oxide fuel cell generator has a plenum containing at least two rows of spaced apart, annular, axially elongated fuel cells. An electrical conductor extending between adjacent rows of fuel cells connects the fuel cells of one row in parallel with each other and in series with the fuel cells of the adjacent row. 5 figures.

Di Croce, A.M.; Draper, R.

1993-11-02T23:59:59.000Z

490

Crystal structure and chemistry of a complex indium phosphate framework material, (ethylenediammonium)In{sub 3}P{sub 3}O{sub 12}(OH){sub 2}  

SciTech Connect (OSTI)

The chemistry and structure of a novel indium phosphate material (RIPS-4), (H{sub 3}NCH{sub 2}CH{sub 2}NH{sub 3})In{sub 3}-P{sub 3}O{sub 12}(OH){sub 2}, are described. RIPS-4 was synthesized using ethylene diamine as a structure-directing organic agent. The X-ray crystal structure was determined from a 12 Multiplication-Sign 12 Multiplication-Sign 42 {mu}m{sup 3} crystal in space group C2/m with a=18.662(4) A, b=6.600(2) A, c=12.573(3) A and {beta}=120.92(1) Degree-Sign . The structure consists of a complex edge- and vertex-shared open framework of InO{sub 6} octahedra and PO{sub 4} tetrahedra enclosing cavities occupied by ethylenediamonium ions. One set of octahedra share opposing edges to form chains along the b-axis matching the structural unit in rutile (TiO{sub 2}). This rutile edge-shared chain has its projecting oxygen atoms shared with the vertexes of either a PO{sub 4} tetrahedron or a second type of InO{sub 6} octahedron. The O atoms are 2-connected, each to one In and one P, except for two protonated O atoms (hydroxyl groups) that connect to two and three In atoms, giving three- and four-coordinate O atoms, respectively. - Graphical abstract: The unique topology contains an unusual 4-connected oxygen atom (O{sub 1}) in a complex edge- and vertex-shared open framework of InO{sub 6} octahedra (blue) and PO{sub 4} tetrahedra (yellow) that encloses cavities occupied by ethylenediammonium ions. Highlights: Black-Right-Pointing-Pointer The structure has a unique open-framework topology. Black-Right-Pointing-Pointer The framework contains an unusual 4-connected oxygen atom. Black-Right-Pointing-Pointer Hydrogen bonds hold the ethylenediammonium ions in the cavities.

Broach, Robert W., E-mail: robert.broach@uop.com [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); Bedard, Robert L. [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States)] [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); King, Lisa M., E-mail: lisa.king@uop.com [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); Pluth, Joseph J., E-mail: pluth@cars.uchicago.edu [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States); The University of Chicago, The Materials Research Science and Engineering Center, Chicago, IL 60637 (United States); Smith, Joseph V. [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States)] [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States); Kirchner, Richard M., E-mail: richard.kirchner@manhattan.edu [Manhattan College, Chemistry Department, Bronx, NY 10471 (United States)

2012-12-15T23:59:59.000Z

491

Complex oxides useful for thermoelectric energy conversion  

DOE Patents [OSTI]

The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.

Majumdar, Arunava (Orinda, CA); Ramesh, Ramamoorthy (Moraga, CA); Yu, Choongho (College Station, TX); Scullin, Matthew L. (Berkeley, CA); Huijben, Mark (Enschede, NL)

2012-07-17T23:59:59.000Z

492

NANO - "Green" metal oxides ... | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

"Green" metal oxides ... Water and nano-sized particles isolated from trees, plants and algae are the ingredients of a new recipe for low-cost metal oxides that are widely used in...

493

Genomic consequences of DNA oxidation by peroxynitrite  

E-Print Network [OSTI]

The radicals nitric oxide and superoxide are produced endogenously by activated macrophages and neutrophils and combine in a diffusion-limited reaction to form peroxynitrite, a powerful oxidizing and nitrating agent capable ...

Neeley, William Louis

2006-01-01T23:59:59.000Z

494

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, Barbara K. (Charleston, WV)

1991-01-01T23:59:59.000Z

495

Dense high temperature ceramic oxide superconductors  

DOE Patents [OSTI]

Dense superconducting ceramic oxide articles of manufacture and methods for producing these articles are described. Generally these articles are produced by first processing these superconducting oxides by ceramic processing techniques to optimize materials properties, followed by reestablishing the superconducting state in a desired portion of the ceramic oxide composite.

Landingham, Richard L. (Livermore, CA)

1993-01-01T23:59:59.000Z

496

Dense high temperature ceramic oxide superconductors  

DOE Patents [OSTI]

Dense superconducting ceramic oxide articles of manufacture and methods for producing these articles are described. Generally these articles are produced by first processing these superconducting oxides by ceramic processing techniques to optimize materials properties, followed by reestablishing the superconducting state in a desired portion of the ceramic oxide composite.

Landingham, R.L.

1993-10-12T23:59:59.000Z

497

Nanotube Fabrication byNanotube Fabrication by Anodic Aluminum Oxide,Anodic Aluminum Oxide,  

E-Print Network [OSTI]

Nanotube Fabrication byNanotube Fabrication by Anodic Aluminum Oxide,Anodic Aluminum Oxide, Self-regulating phenomena in materials science: Self-assembly of nanopores during anodic oxidation of aluminum (AAO) Self combined anodic aluminum oxide (AAO) nanostructures with atomic layer deposition (ALD) to fabricate

Rubloff, Gary W.

498

Large-angle production of charged pions by 3 GeV/c - 12 GeV/c protons on carbon, copper and tin targets  

E-Print Network [OSTI]

A measurement of the double-differential $\\pi^{\\pm}$ production cross-section in proton--carbon, proton--copper and proton--tin collisions in the range of pion momentum $100 \\MeVc \\leq p < 800 \\MeVc$ and angle $0.35 \\rad \\le \\theta <2.15 \\rad$ is presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was done using a small-radius cylindrical time projection chamber (TPC) placed in a solenoidal magnet. An elaborate system of detectors in the beam line ensured the identification of the incident particles. Results are shown for the double-differential cross-sections at four incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc and 12 \\GeVc).

HARP Collaboration

2007-09-21T23:59:59.000Z

499

Final Report for "Boron and Tin in Nuclear Medicien: The Development of Reactive Solid-State Reagents for PET and SPECT  

SciTech Connect (OSTI)

The research program was directed at the use of functionalized organometallic reagents that would rapidly react with radiolabeled agents generated by a medical cyclotron or reactor. The radioisotopes included fluorine-18, oxgygen-15, nitrogen-13, carbon-11 and iodine-123; all short lived nuclides of importantce in nuclear medicine imaging studies utilizing emission tomography techniques. The early studies led to the development of extensive new isotope incorporation chemistry. These studies validated the feasibility of using reactive intermediates, such as the organoboranes, and acted as a catalyst for others to investigate organometallic agents based on mercury, tin, and silicon. A large number of radiolabeling techniques and radiopharmaceuticals were developed. These included agents for use in oncology, neurology, and metabolism. The research resulted in the generation of one hundred and one journal articles, eighty seven refereed published abstracts and forty one invited lectures. Thirteen postdoctoral students, fourteen graduate students, and twenty eight undergraduate students were trained in the scientific aspects of nuclear medicine imaging under the asupices of this grant.

George W. Kabalka

2006-01-13T23:59:59.000Z

500

Direct oxidation of hydrocarbons in a solid oxide fuel cell. I. Methane oxidation  

SciTech Connect (OSTI)

The performance of Cu cermets as anodes for the direct oxidation of CH{sub 4} in solid oxide fuel cells was examined. Mixtures of Cu and yttria-stabilized zirconia (YAZ) were found to give similar performance to Ni-YSZ cermets when H{sub 2} was used as the fuel, but did not deactivate in dry CH{sub 4}. While Cu-YSZ was essentially inert to methane, the addition of ceria to the anode gave rise to reasonable power densities and stable operation over a period of at least 3 days. Proof of direct oxidation of CH{sub 4} came from chemical analysis of the products leaving the cell. The major carbon-containing product was CO{sub 2}, with only traces of CO observed, and there was excellent agreement between the actual cell current and that predicted by the methane conversion. These results demonstrate that direct, electrocatalytic oxidation of dry methane is possible, with reasonable performance.

Park, S.; Craciun, R.; Vohs, J.M.; Gorte, R.J.

1999-10-01T23:59:59.000Z