National Library of Energy BETA

Sample records for indium tin oxide

  1. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  2. P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene

    E-Print Network [OSTI]

    Cairns, Darran

    P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene Terephthalate The wear mechanisms of the Indium Tin Oxide (ITO) coated Polyethylene Terephthalate (PET) topsheet). The bottom substrate is typically glass and the top sheet a polyester such as Polyethylene Terephthalate (PET

  3. Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells

    E-Print Network [OSTI]

    Van Stryland, Eric

    Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

  4. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect (OSTI)

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro; PRESTO, Japan Science and Technology Agency , Honcho Kawaguchi, 332–0012 Saitama

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  5. Conductive indium-tin oxide nanowire and nanotube arrays made by electrochemically assisted deposition in template membranes: switching

    E-Print Network [OSTI]

    Additionally, transparent semiconductor oxide NWs and NTs, such as tin-doped indium oxide (ITO), TiO2 and ZnConductive indium-tin oxide nanowire and nanotube arrays made by electrochemically assisted) and nanotubes (NTs) were grown from acidic aqueous solutions of inorganic precursors in a simple one

  6. Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    : This paper reports on performance enhancement of polymer light-emitting diodes (PLEDs) based on poly(2,5-bis. Keywords : Polymer light emitting diode; Indium tin oxide; Atomic force microscopy; Rutherford backscattering spectroscopy 1. Introduction Polymer light-emitting diodes (PLEDs) have received worldwide

  7. Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

    SciTech Connect (OSTI)

    Yang, Chan-Shan [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tang, Tsung-Ta [Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (China); Pan, Ru-Pin [Department of Electrophysics, National Chiao Tung University, Hsinchu 30078, Taiwan (China); Yu, Peichen [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Pan, Ci-Ling, E-mail: clpan@phys.nthu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Science of Matters, Hsinchu 30013, Taiwan (China)

    2014-04-07

    Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding ?/2 at 1.0 THz was achieved in a ?517??m-thick cell. The phase shifter exhibits high transmittance (?78%). The driving voltage required for quarter-wave operation is as low as 5.66?V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

  8. Using indium tin oxide material to implement the imaging of microwave plasma ignition process

    SciTech Connect (OSTI)

    Wang, Qiang; Hou, Lingyun; Zhang, Guixin Zhang, Boya; Liu, Cheng; Wang, Zhi; Huang, Jian

    2014-02-17

    In this paper, a method is introduced to get global observation of microwave plasma ignition process at high pressure. A microwave resonator was designed with an indium tin oxide coated glass at bottom. Microwave plasma ignition was implemented in methane and air mixture at 10 bars by a 2?ms-3?kW-2.45?GHz microwave pulse, and the high speed images of the ignition process were obtained. The images visually proved that microwave plasma ignition could lead to a multi-point ignition. The system may also be applied to obtain Schlieren images, which is commonly used to observe the development of flame kernel in an ignition process.

  9. Highly efficient inverted organic solar cells using amino acid modified indium tin oxide as cathode

    SciTech Connect (OSTI)

    Li, Aiyuan; Nie, Riming; Deng, Xianyu; Wei, Huaixin; Li, Yanqing; Tang, Jianxin; Zheng, Shizhao; Wong, King-Young

    2014-03-24

    In this paper, we report that highly efficient inverted organic solar cells were achieved by modifying the surface of indium tin oxide (ITO) using an amino acid, Serine (Ser). With the modification of the ITO surface, device efficiency was significantly enhanced from 0.63% to 4.17%, accompanied with an open circuit voltage (Voc) that was enhanced from 0.30?V to 0.55?V. Ultraviolet and X-ray photoelectron spectroscopy studies indicate that the work function reduction induced by the amino acid modification resulting in the decreased barrier height at the ITO/organic interface played a crucial role in the enhanced performances.

  10. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    SciTech Connect (OSTI)

    Zhang, Yingjie; Aziz, Hany, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-07-07

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56?cd/A at the remarkably high brightness of 10{sup 5}?cd/m{sup 2} is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  11. Ferromagnetism of manganese-doped indium tin oxide films deposited on polyethylene naphthalate substrates

    SciTech Connect (OSTI)

    Nakamura, Toshihiro; Isozaki, Shinichi; Tanabe, Kohei; Tachibana, Kunihide

    2009-04-01

    Mn-doped indium tin oxide (ITO) films were deposited on polyethylene naphthalate (PEN) substrates using radio-frequency magnetron sputtering. The magnetic, electrical, and optical properties of the films deposited on PEN substrates were investigated by comparing with the properties of films grown on glass substrates at the same growth conditions. Thin films on PEN substrates exhibited low electrical resistivity of the order of 10{sup -4} {omega} cm and high optical transmittance between 75% and 90% in the visible region. Ferromagnetic hysteresis loops were observed at room temperature for the samples grown on PEN substrates. Mn-doped ITO films can be one of the most promising candidates of transparent ferromagnetic materials for flexible spintronic devices.

  12. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung-Hee University, 1 Seocheon-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Noh, Yong-Jin; Na, Seok-In [Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeonju-si, Jeollabuk-do 561-756 (Korea, Republic of)

    2014-09-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8?nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55?×?10{sup ?5} ? cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54?×?10{sup ?3} ?{sup ?1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10?nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

  13. Interfacial reactions between indium tin oxide and triphenylamine tetramer layers induced by photoirradiation

    SciTech Connect (OSTI)

    Satoh, Toshikazu; Fujikawa, Hisayoshi [Toyota Central R and D Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Yamamoto, Ichiro; Murasaki, Takanori; Kato, Yoshifumi [Toyota Industries Corporation, 8 Chaya, Kyowa, Obu, Aichi 474-8601 (Japan)

    2008-05-01

    The effects of photoirradiation on the interfacial chemical reactions between indium tin oxide (ITO) films and layers of triphenylamine tetramer (TPTE) were investigated by using in situ x-ray photoelectron spectroscopy (XPS). Thin TPTE layers deposited onto sputter-deposited ITO films were irradiated with violet light-emitting diodes (peak wavelength: 380 nm). Shifts in the peak positions of spectral components that originated in the organic layer toward the higher binding-energy side were observed in the XPS profiles during the early stages of irradiation. No further peak shifts were observed after additional irradiation. An increase in the ratio of the organic component in the O 1s spectra was also observed during the photoirradiation. The ratio of the organic component increased in proportion to the cube root of the irradiation time. These results suggest that photoirradiation induces an increase in the height of the carrier injection barrier at the interface between TPTE and ITO in the early stages of the irradiation, possibly due to the rapid diffusion controlled formation and growth of an oxidized TPTE layer, which is considered to act as a high resistance layer.

  14. Stability improvement of organic light emitting diodes by the insertion of hole injection materials on the indium tin oxide substrate

    SciTech Connect (OSTI)

    Chang, Jung-Hung; Liu, Shang-Yi; Wu, I-Wen; Chen, Tsung-Chin; Liu, Chia-Wei [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China); Wu, Chih-I, E-mail: chihiwu@cc.ee.ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China); Department of Electrical and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2014-03-28

    The degradation of organic light-emitting diodes (OLEDs) is a very complex issue, which might include interfacial charge accumulation, material diffusion, and electrical-induced chemical reaction during the operation. In this study, the origins of improvement in device stability from inserting a hole injection layer (HIL) at the indium tin oxide (ITO) anode are investigated. The results from aging single-layer devices show that leakage current increases in the case of ITO/hole transport layer contact, but this phenomenon can be prevented by inserting molybdenum oxide (MoO{sub 3}) or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN{sub 6}) as an HIL. Moreover, X-ray photoemission spectroscopy suggests that the diffusion of indium atoms and active oxygen species can be impeded by introducing MoO{sub 3} or HAT-CN{sub 6} as an HIL. These results reveal that the degradation of OLEDs is related to indium and oxygen out-diffusion from the ITO substrates, and that the stability of OLEDs can be improved by impeding this diffusion with HILs.

  15. Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Jeffrey W. Elam,*, David A. Baker, Alex B. F. Martinson,, Michael J. Pellin, and

    E-Print Network [OSTI]

    Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors Jeffrey W: NoVember 8, 2007 This article describes a new atomic layer deposition (ALD) method for preparing,2 sol-gel methods,3 chemical vapor deposition,4 pulsed laser deposition,5 and atomic layer

  16. Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

    SciTech Connect (OSTI)

    Gao, S.; Chen, C.; Liu, H. Y.; Lin, Y. S.; Li, S. Z.; Lu, S. H.; Wang, G. Y.; Song, C.; Zeng, F., E-mail: zengfei@mail.tsinghua.edu.cn; Pan, F., E-mail: panf@mail.tsinghua.edu.cn [Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhai, Z. [Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2014-08-11

    The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ?10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000?s, and fast operation speed of <100?ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.

  17. Large-scale patterning of indium tin oxide electrodes for guided mode extraction from organic light-emitting diodes

    SciTech Connect (OSTI)

    Geyer, Ulf; Hauss, Julian; Riedel, Boris; Gleiss, Sebastian; Lemmer, Uli; Gerken, Martina

    2008-11-01

    We describe a cost-efficient and large area scalable production process of organic light-emitting diodes (OLEDs) with photonic crystals (PCs) as extraction elements for guided modes. Using laser interference lithography and physical plasma etching, we texture the indium tin oxide (ITO) electrode layer of an OLED with one- and two-dimensional PC gratings. By optical transmission measurements, the resonant mode of the grating is shown to have a drift of only 0.4% over the 5 mm length of the ITO grating. By changing the lattice constant between 300 and 600 nm, the OLED emission angle of enhanced light outcoupling is tailored from -24.25 deg. to 37 deg. At these angles, the TE emission is enhanced up to a factor of 2.14.

  18. Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

    SciTech Connect (OSTI)

    Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Bong Kyu; Ahn, Chang-Geun; Kim, Sang-Hyeob [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of); Choi, Chel-Jong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-07-21

    We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter?

  19. Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes

    SciTech Connect (OSTI)

    Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2014-01-27

    We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup ?} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2?eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91?cd/A, 102?lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

  20. Indium tin oxide (ITO) was used as a hole conductor for quantum dot sensitized solar cells (QDSSC) and optimization of the deposition of ITO was investigated. To determine optimal voltage for electrochemically assisted deposition (EAD) of ITO, linear swee

    E-Print Network [OSTI]

    Abstract Indium tin oxide (ITO) was used as a hole conductor for quantum dot sensitized solar cells sensitized solar cells - Quantum dot sensitized solar cells could be much less costly than traditional solar

  1. Hydrogen Sensor Based on Yttria-Stabilized Zirconia Electrolyte and Tin-Doped Indium Oxide Sensing Electrode

    SciTech Connect (OSTI)

    Martin, L P; Glass, R S

    2004-03-26

    A solid state electrochemical sensor has been developed for hydrogen leak detection in ambient air. The sensor uses an yttria-stabilized electrolyte with a tin-doped indium oxide sensing electrode and a Pt reference electrode. Excellent sensitivity, and response time of one second or less, are reported for hydrogen gas over the concentration range of 0.03 to 5.5% in air. Cross-sensitivity to relative humidity and to CO{sub 2} are shown to be low. The response to methane, a potentially significant source of interference for such a sensor, is significantly less than that for hydrogen. The sensor shows good reproducibility and was unaffected by thermal cycling over the course of this investigation. The effects of sensing electrode thickness and thermal aging are also reported, and the sensing mechanism is discussed. The sensor is intended for use in vehicles powered by hydrogen fuel cells and hydrogen internal combustion engines. Those vehicles will use and/or store significant quantities of hydrogen, and will require safety sensor for monitoring potential hydrogen leakage in order to ensure passenger safety.

  2. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement 

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16

    of several methods for carbon nanotube film fabrication: (a) vacuum filtration, (b) air-spraying, (c) transfer printing, and (d) rod coating (reproduced from [91], [92], [37], and [42], respectively). .................................... 16 2.8 (a...) Graphene oxide structure. (b) Deposition of graphene oxide sheet by dip coating and an SEM image of deposited graphene oxide pieces (reproduced from [172]). (c) Photo reduction lithography approach for fabrication of patterns on (PDDA/Graphene Oxide...

  3. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    SciTech Connect (OSTI)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  4. EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes

    E-Print Network [OSTI]

    over that of a conventional OLED without an oxide capped anode. 1. Introduction Organic light for Organic Light-emitting Diodes Chengfeng Qiu, Haiying Chen, Zhilang Xie, Man Wong and Hoi Sing Kwok Center of metals enhance while other oxides degrade the hole-injection and quantum efficiencies of organic light

  5. In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin oxide thin films on polyimide substrates

    E-Print Network [OSTI]

    Li, Teng

    In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin Lou1,b) 1 Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77005, USA 2 Department of Mechanical Engineering and Maryland NanoCenter, University of Maryland

  6. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

  7. Self-Assembled Bilayers on Indium–Tin Oxide (SAB-ITO) Electrodes. A Design for Chromophore–Catalyst Photoanodes

    SciTech Connect (OSTI)

    Glasson, Christopher R. K. [Univ. of North Carolina, Chapel Hill, NC (United States); Song, Wenjing [Univ. of North Carolina, Chapel Hill, NC (United States); Ashford, Dennis L. [Univ. of North Carolina, Chapel Hill, NC (United States); Vannucci, Aaron K. [Univ. of North Carolina, Chapel Hill, NC (United States); Chen, Zuofeng [Univ. of North Carolina, Chapel Hill, NC (United States); Concepcion, Javier J. [Univ. of North Carolina, Chapel Hill, NC (United States); Holland, Patrick L. [Univ. of Rochester, NY (United States); Meyer, Thomas J. [Univ. of North Carolina, Chapel Hill, NC (United States)

    2012-08-02

    A novel approach for creating assemblies on metal oxide surfaces via the addition of a catalyst overlayer on a chomophore monolayer derivatized surface is described. It is based on the sequential self-assembly of a chromophore, [Ru(bpy)(4,4'-(PO3H2bpy)2)]2+, and oxidation catalyst, [Ru(bpy)(P2Mebim2py)OH2]2+, pair, resulting in a spatially separated chromophore–catalyst assembly.

  8. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  9. Photovoltaic effect of lead-free (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} ferroelectric thin film using Pt and indium tin oxide top electrodes

    SciTech Connect (OSTI)

    Seok Woo, Won; Sik Won, Sung; Won Ahn, Chang; Chae, Song A; Won Kim, Ill, E-mail: kimiw@mail.ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of); Ullah, Aman [Department of Physics, University of Science and Technology, Bannu, Khyber Pakhtunkhwa (Pakistan)

    2014-01-21

    We have grown a Bi-layer structure (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} (NKBiT) ferroelectric thin film on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(100) substrate by using the chemical solution deposition method and deposited two kinds of thin Pt and indium tin oxide (ITO) top electrodes. The photovoltaic behaviors of Pt/NKBiT/Pt and ITO/NKBit/Pt capacitors were investigated over the wavelength range of 300–500?nm. When NKBiT thin film is illuminated by the corresponding wavelength of the film's energy band gap (E{sub g}), a photocurrent is generated due to the Schottky barrier between electrode and film, and an internal electric field is originated by the depolarization field. The maximum photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor in the poled-up state are obtained as 45.75?nA/cm{sup 2} and 0.035%, respectively, at 352?nm. The photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor increased to 3.5 times higher than that of the Pt/NKBiT/Pt capacitor.

  10. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect (OSTI)

    Hu, W.; Peterson, R. L., E-mail: blpeters@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 ?-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34??m, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  11. Amorphous tin-cadmium oxide films and the production thereof

    DOE Patents [OSTI]

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  12. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  13. Magnetism and spin transport studies on indium tin oxide

    E-Print Network [OSTI]

    Hakimi, Ali Moraad Heydar

    2011-07-12

    : Preliminary results . . . . . 205 10.7 Summary and Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . 208 11 Summary and Conclusions 212 12 Future Directions and Outlook 214 12.1 TEM study of the DMO... ] over one hundred years ago. Since then, these materials have formed integral components in a wide variety of modern day optoelectronic applications such as liquid crystal displays and transparent electrodes of solar cells. In order to achieve...

  14. Atomic layer deposition of tin oxide films using tetrakis,,dimethylamino... tin Jeffrey W. Elam,a

    E-Print Network [OSTI]

    Atomic layer deposition of tin oxide films using tetrakis,,dimethylamino... tin Jeffrey W. Elam for preparing thin films of SnO2 by atomic layer deposition ALD using alternating exposures to tetrakis sputtering,5 chemi- cal vapor deposition,15 spray pyrolysis,11 and atomic layer deposition ALD .16­18 ALD

  15. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  16. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, Carleton H. (1304 Onava Ct., NE., Albuquerque, NM 87112); Evans, Jr., Joseph Tate (13609 Verbena Pl., NE., Albuquerque, NM 87112)

    1998-01-01

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  17. Macro- and microscopic properties of strontium doped indium oxide

    SciTech Connect (OSTI)

    Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

    2014-07-28

    Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In{sub 2}O{sub 3}:(SrO){sub x} were investigated for materials with different doping levels at different temperatures (T?=?20–300?°C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x?=?10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn{sub 2}O{sub 4}. An unusual property of high level (x?=?10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100–200?°C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3?×?10{sup ?13}?cm{sup 2}/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

  18. Graphene oxide oxidizes stannous ions to synthesize tin sulfidegraphene nanocomposites with small crystal size for high performance lithium ion

    E-Print Network [OSTI]

    Cao, Guozhong

    Graphene oxide oxidizes stannous ions to synthesize tin sulfide­graphene nanocomposites with small September 2012 DOI: 10.1039/c2jm34864k This study reports a novel strategy of preparing graphene composites by employing graphene oxide as precursor and oxidizer. It is demonstrated that graphene oxide can oxidize

  19. Mechanism for the formation of tin oxide nanoparticles and nanowires inside the mesopores of SBA-15

    SciTech Connect (OSTI)

    Satishkumar, G.; Titelman, L. [Blechner Center for Industrial Catalysis and Process Development, Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Landau, M.V., E-mail: mlandau@bgu.ac.i [Blechner Center for Industrial Catalysis and Process Development, Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)

    2009-10-15

    The formation of polycrystalline tin oxide nanoparticles (NP) and nanowires was investigated using nanocasting approach included solid-liquid strategy for insertion of SnCl{sub 2} precursor and SBA-15 silica as a hard template. HR-TEM and XRD revealed that during the thermal treatment in air 5 nm tin oxide NP with well defined Cassiterite structure were formed inside the SBA-15 matrix mesopores at 250 deg. C. After air calcination at 700 deg. C the NP assembled inside the SBA-15 mesopores as polycrystalline nanorods with different orientation of atomic layers in jointed nanocrystals. It was found that the structure silanols of silica matrix play a vital role in creating the tin oxide NP at low temperature. The pure tin chloride heated in air at 250 deg. C did not react with oxygen to yield tin oxide. Tin oxide NP were also formed during the thermal treatment of the tin chloride loaded SBA-15 in helium atmosphere at 250 deg. C. Hence, it is well evident that silanols present in the silica matrix not only increase the wetting of tin chloride over the surface of SBA-15 favoring its penetration to the matrix pores, but also react with hydrated tin chloride according to the proposed scheme to give tin oxide inside the mesopores. It was confirmed by XRD, N{sub 2}-adsorption, TGA-DSC and FTIR spectra. This phenomenon was further corroborated by detecting the inhibition of SnO{sub 2} NP formation at 250 deg. C after inserting the tin precursor to SBA-15 with reduced silanols concentration partially grafted with tin chloride. - Graphical abstract: The mechanism of formation of polycrystalline tin oxide nanoparticles (NP) and nanowires was investigated using nanocasting approach included solid-liquid strategy for insertion of SnCl{sub 2} precursor and SBA-15 silica as a hard template. It was found that the structure silanols of silica matrix play a vital role in creating the tin oxide NP during thermal treatment.

  20. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  1. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    SciTech Connect (OSTI)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  2. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    SciTech Connect (OSTI)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

  3. Gas Sensors Based on Tin Oxide Nanoparticles Synthesized from a Mini-Arc Plasma Source

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lu, Ganhua; Huebner, Kyle L.; Ocola, Leonidas E.; Gajdardziska-Josifovska, Marija; Chen, Junhong

    2006-01-01

    Miniaturized gas sensors or electronic noses to rapidly detect and differentiate trace amount of chemical agents are extremely attractive. In this paper, we report on the fabrication and characterization of a functional tin oxide nanoparticle gas sensor. Tin oxide nanoparticles are first synthesized using a convenient and low-cost mini-arc plasma source. The nanoparticle size distribution is measured online using a scanning electrical mobility spectrometer (SEMS). The product nanoparticles are analyzed ex-situ by high resolution transmission electron microscopy (HRTEM) for morphology and defects, energy dispersive X-ray (EDX) spectroscopy for elemental composition, electron diffraction for crystal structure, and X-ray photoelectron spectroscopy (XPS)more »for surface composition. Nonagglomerated rutile tin oxide (SnO2) nanoparticles as small as a few nm have been produced. Larger particles bear a core-shell structure with a metallic core and an oxide shell. The nanoparticles are then assembled onto an e-beam lithographically patterned interdigitated electrode using electrostatic force to fabricate the gas sensor. The nanoparticle sensor exhibits a fast response and a good sensitivity when exposed to 100 ppm ethanol vapor in air.« less

  4. Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

    SciTech Connect (OSTI)

    Kannan Selvaraj, Sathees; Feinerman, Alan; Takoudis, Christos G.

    2014-01-15

    In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1?±?0.01?nm/cycle within the wide ALD temperature window of 175–300?°C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3?? cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

  5. Growth of CrO[subscript 2] coated single crystalline (SnO[subscript 2]) tin oxide nanowires

    E-Print Network [OSTI]

    Miao, Guo-Xing

    Single crystalline tin oxide (SnO[subscript 2]) nanowires have been synthesized by carbothermal reduction of SnO[subscript 2] nanopowder followed by thermal evaporation of the reduced precursor and growth via the ...

  6. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  7. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  8. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowires via Chemical Vapor Transport

    E-Print Network [OSTI]

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-01-01

    6 Growth Rate (um/hr) Vapor Pressure (Torr) In2O3 Ga2O3 SnO2Rate (µm/hr) Metal Vapor Pressure (Torr) Crystalline phaseto the source metal vapor pressure. Initial experiments show

  9. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1997-01-01

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  10. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1996-01-01

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  11. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1996-12-03

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  12. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1997-03-04

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  13. Effect of ultraviolet radiation exposure on room-temperature hydrogen sensitivity of nanocrystalline doped tin oxide sensor incorporated into microelectromechanical systems device

    SciTech Connect (OSTI)

    Shukla, Satyajit; Agrawal, Rajnikant; Cho, Hyoung J.; Seal, Sudipta; Ludwig, Lawrence; Parish, Clyde [Advanced Materials Processing and Analysis Center (AMPAC) and Mechanical Materials Aerospace Engineering (MMAE) Department, Engineering 381, University of Central Florida, 4000 Central Florida Boulevard, Orlando, Florida 32816 (United States); National Aeronautics and Space Administration (NASA), John F. Kennedy Space Center, Kennedy Space Center (KSC), Florida 32899 (United States)

    2005-03-01

    The effect of ultraviolet (UV) radiation exposure on the room-temperature hydrogen (H{sub 2}) sensitivity of nanocrystalline indium oxide (In{sub 2}O{sub 3})-doped tin oxide (SnO{sub 2}) thin-film gas sensor is investigated in this article. The present sensor is incorporated into microelectromechanical systems device using sol-gel dip-coating technique. The present sensor exhibits a very high sensitivity, as high as 65 000-110 000, at room temperature, for 900 ppm of H{sub 2} under the dynamic test condition without UV exposure. The H{sub 2} sensitivity is, however, observed to reduce to 200 under UV radiation, which is contrary to the literature data, where an enhanced room-temperature gas sensitivity has been reported under UV radiation. The observed phenomenon is attributed to the reduced surface coverage by the chemisorbed oxygen ions under UV radiation, which is in consonance with the prediction of the constitutive equation, proposed recently by the authors, for the gas sensitivity of nanocrystalline semiconductor oxide thin-film sensors.

  14. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    SciTech Connect (OSTI)

    Zhang, Yan; Yu, Jianqiang; Sun, Kai; Zhu, Yukun; Bu, Yuyu; Chen, Zhuoyuan

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  15. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Xu, Rui; He, Jian [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Song, Yang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Li, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Zaslavsky, A. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Paine, D. C., E-mail: David-Paine@brown.edu [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ?10{sup ?2?}??cm{sup 2}, ?3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ?27?cm{sup 2}/V?s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  16. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nmmore »(including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  17. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  18. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group; Mendelsberg, Rueben J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group and Molecular Foundry; Zhu, Jiaqi [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Han, Jiecai [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Anders, Andre [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group

    2013-01-01

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  19. Investigation of fluorine-doped tin oxide based optically transparent E-shaped patch antenna for terahertz communications

    SciTech Connect (OSTI)

    Anand, S., E-mail: anand.s.krishna@gmail.com, E-mail: darak.mayur@gmail.com, E-mail: srk@nitt.edu; Darak, Mayur Sudesh, E-mail: anand.s.krishna@gmail.com, E-mail: darak.mayur@gmail.com, E-mail: srk@nitt.edu; Kumar, D. Sriram, E-mail: anand.s.krishna@gmail.com, E-mail: darak.mayur@gmail.com, E-mail: srk@nitt.edu [Department of Electronics and Communication Engineering, National Institute of Technology, Tiruchirappalli 620015 (India)

    2014-10-15

    In this paper, a fluorine-doped tin oxide based optically transparent E-shaped patch antenna is designed and its radiation performance is analyzed in the 705 – 804 GHz band. As optically transparent antennas can be mounted on optical display, they facilitate the reduction of overall system size. The proposed antenna design is simulated using electromagnetic solver - Ansys HFSS and its characteristics such as impedance bandwidth, directivity, radiation efficiency and gain are observed. Results show that the fluorine-doped tin oxide based optically transparent patch antenna overcomes the conventional patch antenna limitations and thus the same can be used for solar cell antenna used in satellite systems.

  20. Comparative study of metal or oxide capped indiumtin oxide anodes for organic light-emitting diodes

    E-Print Network [OSTI]

    of Physics. DOI: 10.1063/1.1556184 I. INTRODUCTION Organic light-emitting diodes OLEDs 1 are challengingComparative study of metal or oxide capped indium­tin oxide anodes for organic light as anodes in organic light-emitting diodes based on N,N -diphenyl-N,N bis 3-methyl-phenyl-1,1 -biphenyl-4

  1. Sensing behaviour of nanosized zinc-tin composite oxide towards liquefied petroleum gas and ethanol

    SciTech Connect (OSTI)

    Singh, Ravi Chand; Singh, Onkar; Singh, Manmeet Pal; Chandi, Paramdeep Singh; Thangaraj, R.

    2010-09-15

    A chemical route has been used to synthesize composite oxides of zinc and tin. An ammonia solution was added to equal amounts of zinc and tin chloride solutions of same molarities to obtain precipitates. Three portions of these precipitates were annealed at 400, 600 and 800 {sup o}C, respectively. Results of X-ray diffraction and transmission electron microscopy clearly depicted coexistence of phases of nano-sized SnO{sub 2}, ZnO, Zn{sub 2}SnO{sub 4} and ZnSnO{sub 3}. The effect of annealing on structure, morphology and sensing has been observed as well. It has been observed that annealing promoted growth of Zn{sub 2}SnO{sub 4} and ZnSnO{sub 3} at the expense of zinc. The sensing response of fabricated sensors from these materials to 250 ppm LPG and ethanol has been investigated. The sensor fabricated from powder annealed at 400 {sup o}C responded better to LPG than ethanol.

  2. The electrical conduction properties of poly-crystalline indium-zinc-oxide film

    SciTech Connect (OSTI)

    Tomai, S. [Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba 2990293 (Japan); Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma, Nara 6300192 (Japan); Terai, K.; Junke, T.; Tsuruma, Y.; Ebata, K.; Yano, K. [Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba 2990293 (Japan); Uraoka, Y. [Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma, Nara 6300192 (Japan)

    2014-02-28

    We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline semiconductor material composed of indium and zinc (p-IZO). A typical conduction mechanism of p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The grain boundary potential of the 2-h-annealed IZO film was calculated to be 100?meV, which was comparable to that of the polycrystalline silicon. However, the p-IZO thin film transistor (TFT) measurement shows rather uniform characteristics. It denotes that the mobility deterioration around the grain boundaries is lower than the case for low-temperature polycrystalline silicon. This assertion was made based on the difference of the mobility between the polycrystalline and amorphous IZO film being much smaller than is the case for silicon transistors. Therefore, we conclude that the p-IZO is a promising material for a TFT channel, which realizes high drift mobility and uniformity simultaneously.

  3. Advanced materials for solid oxide fuel cells: Hafnium-Praseodymium-Indium Oxide System

    SciTech Connect (OSTI)

    Bates, J.L.; Griffin, C.W.; Weber, W.J.

    1988-06-01

    The HfO/sub 2/-PrO/sub 1.83/-In/sub 2/O/sub 3/ system has been studied at the Pacific Northwest Laboratory to develop alternative, highly electrically conducting oxides as electrode and interconnection materials for solid oxide fuel cells. A coprecipitation process was developed for synthesizing single-phase, mixed oxide powders necessary to fabricate powders and dense oxides. A ternary phase diagram was developed, and the phases and structures were related to electrical transport properties. Two new phases, an orthorhombic PrInO/sub 3/ and a rhombohedral Hf/sub 2/In/sub 2/O/sub 7/ phase, were identified. The highest electronic conductivity is related to the presence of a bcc, In/sub 2/O/sub 3/ solid solution (ss) containing HfO/sub 2/ and PrO/sub 1.83/. Compositions containing more than 35 mol % of the In/sub 2/O/sub 3/ ss have electrical conductivities greater than 10/sup /minus/1/ (ohm-cm)/sup /minus/1/, and the two or three phase structures that contain this phase appear to exhibit mixed electronic-ionic conduction. The high electrical conductivities and structures similar to the Y/sub 2/O/sub 3/-stabilized ZrO/sub 2/(HfO/sub 2/) electrolyte give these oxides potential for use as cathodes in solid oxide fuel cells. 21 refs.

  4. Three-dimensional photonic crystal fluorinated tin oxide (FTO) electrodes : synthesis and optical and electrical properties.

    SciTech Connect (OSTI)

    Yang, Z.; Gao, S.; Li, W.; Vlasko-Vlasov, V.; Welp, U.; Kwok, W.-K.; Xu, T.

    2011-04-01

    Photovoltaic (PV) schemes often encounter a pair of fundamentally opposing requirements on the thickness of semiconductor layer: a thicker PV semiconductor layer provides enhanced optical density, but inevitably increases the charge transport path length. An effective approach to solve this dilemma is to enhance the interface area between the terminal electrode, i.e., transparent conducting oxide (TCO) and the semiconductor layer. As such, we report a facile, template-assisted, and solution chemistry-based synthesis of 3-dimensional inverse opal fluorinated tin oxide (IO-FTO) electrodes. Synergistically, the photonic crystal structure possessed in the IO-FTO exhibits strong light trapping capability. Furthermore, the electrical properties of the IO-FTO electrodes are studied by Hall effect and sheet resistance measurement. Using atomic layer deposition method, an ultrathin TiO{sub 2} layer is coated on all surfaces of the IO-FTO electrodes. Cyclic voltammetry study indicates that the resulting TiO{sub 2}-coated IO-FTO shows excellent potentials as electrodes for electrolyte-based photoelectrochemical solar cells.

  5. PALLADIUM DOPED TIN OXIDE BASED HYDROGEN GAS SENSORS FOR SAFETY APPLICATIONS

    SciTech Connect (OSTI)

    Kasthurirengan, S.; Behera, Upendra; Nadig, D. S.

    2010-04-09

    Hydrogen is considered to be a hazardous gas since it forms a flammable mixture between 4 to 75% by volume in air. Hence, the safety aspects of handling hydrogen are quite important. For this, ideally, highly selective, fast response, small size, hydrogen sensors are needed. Although sensors based on different technologies may be used, thin-film sensors based on palladium (Pd) are preferred due to their compactness and fast response. They detect hydrogen by monitoring the changes to the electrical, mechanical or optical properties of the films. We report the development of Pd-doped tin-oxide based gas sensors prepared on thin ceramic substrates with screen printed platinum (Pt) contacts and integrated nicrome wire heaters. The sensors are tested for their performances using hydrogen-nitrogen gas mixtures to a maximum of 4%H{sub 2} in N{sub 2}. The sensors detect hydrogen and their response times are less than a few seconds. Also, the sensor performance is not altered by the presence of helium in the test gas mixtures. By the above desired performance characteristics, field trials of these sensors have been undertaken. The paper presents the details of the sensor fabrication, electronic circuits, experimental setup for evaluation and the test results.

  6. Aluminum-doped Zinc Oxide Nanoink

    Energy Innovation Portal (Marketing Summaries) [EERE]

    2014-08-15

    Scientists at Berkeley Lab have developed a method for fabricating conductive aluminum-doped zinc oxide (AZO) nanocrystals that provide a lower cost, less toxic, earth-abundant alternative to the widely used transparent conductive oxide (TCO) indium tin oxide while offering comparable optical and electronic properties. TCOs are used in devices such as flat screen displays, photovoltaic cells, photochromic windows, chemical sensors, and biosensors....

  7. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  8. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  9. Nanoscale Electrical Conductivity and Surface Spectroscopic Studies of Indium-Tin Oxide Yish-Hann Liau and Norbert F. Scherer*

    E-Print Network [OSTI]

    Scherer, Norbert F.

    such as flat panel displays, solar cells, and organic electroluminescence devices due to its unique combination of such films. The impact of this study on the future development of optoelectronic devices is discussed. I

  10. P-28 / D. R. Cairns P-28: The Effect of Thermal Shrinkage on Indium Tin Oxide Coated

    E-Print Network [OSTI]

    Cairns, Darran

    on polyimide films (Kapton E DuPont) [10-11]. Polyimide is a high performance engineering polymer with a Young's modulus of 5 GPa. The excellent mechanical properties of the polyimide films lend themselves properties to polyimide, but superior optical properties. ITO is commonly used as the conducting electrode

  11. Self-organization of a new fluorous porphyrin and C60 films on indium-tin-oxide electrodew

    E-Print Network [OSTI]

    Liu, Gang-yu

    ­10 The porphyrin­fullerene com- plexes are appealing as materials for solar-energy conversion and energy storage polarizability of fluorine atoms confers a low surface energy to materials14 composed of this porphyrin. 5 building blocks for the fabrication of photoactive materials. There are numerous studies on the spontaneous

  12. IEEE ELECTRON DEVICE LETTERS, VOL. 24, NO. 5, MAY 2003 315 DC Sputtered Indium-Tin Oxide Transparent Cathode

    E-Print Network [OSTI]

    severe and relatively independent of the sputtering power. Consequently, a high dc sputtering power-injecting electrode [6]. For a given CuPc thickness, the sputtering power must be high enough to produce a sufficient damage to the underlying emission layer. For a given sputtering power, the CuPc must be thin enough

  13. Towards an understanding of light activation processes in titanium oxide based inverted organic solar cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    solar cells S. Chambon, E. Destouesse, B. Pavageau, L. Hirsch, and G. Wantz Citation: J. Appl. Phys. 112. Related Articles Power losses in bilayer inverted small molecule organic solar cells Appl. Phys. Lett. 101, 233903 (2012) Thin-film encapsulation of inverted indium-tin-oxide-free polymer solar cells by atomic

  14. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    E-Print Network [OSTI]

    Zhu, Yuankun

    2014-01-01

    high efficiency multi-junction solar cells that harvest aeffective for multi-junction solar cells which consist ofhigh performance multi-junction solar cells. Cadmium oxide (

  15. Sensors and Actuators B 118 (2006) 135141 Low temperature indium oxide gas sensors

    E-Print Network [OSTI]

    2006-01-01

    Available online 30 May 2006 Abstract InOx thin films were grown by dc magnetron sputtering. Structural size variation that determines the sensitivity of InOx films against ozone. © 2006 Elsevier B.V. All rights reserved. Keywords: Metal oxide thin films; InOx; Gas sensors; Ozone 1. Introduction The interest

  16. Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

    E-Print Network [OSTI]

    Heo, Jaeyeong

    We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, ...

  17. Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in

    E-Print Network [OSTI]

    in improving the performance of Earth-abun- dant solar cells. Thin lm solar cells comprising Earth in metal-oxide solar cells Yun Seog Lee,a Jaeyeong Heo,bc Sin Cheng Siah,a Jonathan P. Mailoa,a Riley E-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick

  18. Structural, optical, and electrical properties of indium doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

    E-Print Network [OSTI]

    Zhu, Yuankun

    2014-01-01

    and transparent Ti-doped CdO films by pulsed lasermeasurements on boron-doped CdO thin films. J Mater Sci 46:and optical properties of tin-doped CdO films deposited by

  19. Atomic Layer Deposition of In2O3 Using Cyclopentadienyl Indium: A New Synthetic Route to Transparent Conducting Oxide Films

    E-Print Network [OSTI]

    Atomic Layer Deposition of In2O3 Using Cyclopentadienyl Indium: A New Synthetic Route we present a new method for depositing In2O3 thin films by atomic layer deposition (ALD) using-15 and atomic layer deposition (ALD).16-20 Of these techniques, ALD shows significant promise as this method

  20. Synthesis of transparent conducting oxide coatings

    DOE Patents [OSTI]

    Elam, Jeffrey W.; Martinson, Alex B. F.; Pellin, Michael J.; Hupp, Joseph T.

    2010-05-04

    A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.

  1. Effects of low-temperature (120?°C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect (OSTI)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120?°C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  2. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect (OSTI)

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2?V is ?10{sup 9} ? for a device with the radius of 50??m) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2?V is ?10{sup 3} ? for the radius of 50??m) by applying a voltage pulse (e.g., 10?V/1??s). The WORM device has good data-retention and reading-endurance capabilities.

  3. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect (OSTI)

    Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100?°C. The a-IGZO TFT exhibit a mobility of 5.13?cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4?mm (strain?=?1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10?V for 1500?s. Thus, this technology is suitable for use in flexible displays.

  4. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Mechanical Behavior of Indium Nanostructures Print Wednesday, 26 May 2010 00:00 Indium is a key material in lead-free solder...

  5. Dielectric Elastomers for Fluidic and Biomedical Applications

    E-Print Network [OSTI]

    McCoul, David

    2015-01-01

    nickel before transferring to PDMS. [174] Carbon NanotubesNickel Indium Platinum Tin Chromium Gallium Lead Mercury Indium Tin Oxide Single-Walled Carbon Nanotubes

  6. Hierarchical hollow microsphere and flower-like indium oxide: Controllable synthesis and application as H{sub 2}S cataluminescence sensing materials

    SciTech Connect (OSTI)

    Cai, Pingyang, E-mail: cpyxx@163.com [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Bai, Wei, E-mail: weibaiscu@gmail.com [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Zhang, Lichun, E-mail: lichun0203@yahoo.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Song, Hongjie, E-mail: aurora811005@yahoo.com.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Yingying, E-mail: suyinging@scu.edu.cn [Analytical and Testing Center, Sichuan University, Chengdu, Sichuan 610064 (China)] [Analytical and Testing Center, Sichuan University, Chengdu, Sichuan 610064 (China); Lv, Yi, E-mail: lvy@scu.edu.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)

    2012-09-15

    Graphical abstract: Hierarchical hollow microsphere and flower-like In{sub 2}O{sub 3} were controllable fabricated through a novel and simple hydrothermal process, and the former showed superior cataluminescence sensing performance to H{sub 2}S. Highlights: ? In{sub 2}O{sub 3} hierarchical hollow sphere were prepared via a hydrothermal route. ? The growth process of In{sub 2}O{sub 3} hierarchical hollow sphere has been investigated. ? The sensor based on prepared In{sub 2}O{sub 3} shows good sensing performance to H{sub 2}S. -- Abstract: In the present work, In{sub 2}O{sub 3} hierarchical hollow microsphere and flower-like microstructure were achieved controllably by a hydrothermal process in the sodium dodecyl sulfate (SDS)-N,N-dimethyl-formamide (DMF) system. XRD, SEM, HRTEM and N{sub 2} adsorption measurements were used to characterize the as-prepared indium oxide materials and the possible mechanism for the microstructures formation was briefly discussed. The cataluminescence gas sensor based on the as-prepared In{sub 2}O{sub 3} was utilized to detect H{sub 2}S concentrations in flowing air. Comparative gas sensing results revealed that the sensor based on hierarchical hollow microsphere exhibited much higher sensing sensitivity in detecting H{sub 2}S gas than the sensor based on flower-like microstructure. The present gas sensor had a fast response time of 5 s and a recovery time of less than 25 s, furthermore, the cataluminescence intensity vs. H{sub 2}S concentration was linear in range of 2–20 ?g mL{sup ?1} with a detection limit of 0.5 ?g mL{sup ?1}. The present highly sensitive, fast-responding, and low-cost In{sub 2}O{sub 3}-based gas sensor for H{sub 2}S would have many practical applications.

  7. A high frequency titration of indium with benzenephosphinic acid 

    E-Print Network [OSTI]

    Keilt, Francis Xavier

    1960-01-01

    of the titrant would not indicate any change in the conductance of the solution. Tin, titanium, zirconium, bismuth, molybdenum, uranium, tungsten, and cerium would interfere with the ti. tration of indium. TABLE OF COHTEHTS Page I? XHTRODUCTIOH... by the addition of 0. 1899 M. HPhin to an indium chloride solution containing 1. 4. 00 milliliters of 0. 1000 M. sodium chloride . ~ 27 2. 16. 00 millili. ters of 0. 1000 M. sodium chloride. . . 27 3. 28. 00 milliliters of 0. 1000 M. sodium chloride. ~ . 28 4...

  8. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended...

  9. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Indium Under the Nanoscope In this work, Lee et al. investigated the small-scale plastic deformation of indium nanopillars, a previously unstudied material and crystal...

  10. Springs, Rings, and Spirals of Rutile-Structured Tin Oxide Nanobelts Rusen Yang and Zhong Lin Wang*,,

    E-Print Network [OSTI]

    Wang, Zhong L.

    . The formation process has been analyzed based on the polar charge interaction model. The discovery of SnO2 rings's chemical and physical properties. Since the discovery of semiconducting oxide nanobelts1 (ZnO, SnO2, Cd the discovery of single- crystalline SnO2 springs, rings, and spirals, which have the rutile structure

  11. Selective Oxidative Degradation of Organic Pollutants by Singlet Oxygen-Mediated Photosensitization: Tin Porphyrin versus C60

    E-Print Network [OSTI]

    Alvarez, Pedro J.

    degradation of neutral phenols under high power light irradiation. Self-sensitized destruction caused gradualSelective Oxidative Degradation of Organic Pollutants by Singlet Oxygen-Mediated Photosensitization-derivatized silica (SnP/silica and aminoC60/silica) as 1 O2 generating systems for photo- chemical degradation

  12. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

    SciTech Connect (OSTI)

    Fakhri, M.; Theisen, M.; Behrendt, A.; Görrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)

    2014-06-23

    Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.

  13. Copper Indium Gallium Diselenide

    Broader source: Energy.gov [DOE]

    DOE supports innovative research focused on overcoming the current technological and commercial barreirs for copper indium gallium diselenide [Cu(InxGa1-x)Se2], or CIGS, solar cells. A list of...

  14. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect (OSTI)

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, José Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ? Synthesis of cadmium and tin telluride. ? Chemical route to obtain pure crystalline cadmium and tin telluride. ? Effect of the annealing temperature on the crystalline phases. ? Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  15. Polaron absorption in amorphous tungsten oxide films

    SciTech Connect (OSTI)

    Berggren, Lars; Azens, Andris; Niklasson, Gunnar A.

    2001-08-15

    Amorphous thin films of tungsten oxide were deposited by sputtering onto glass substrates covered by conductive indium--tin oxide. The density and stoichiometry were determined by Rutherford backscattering spectrometry. Lithium ions were intercalated electrochemically into the films. The optical reflectance and transmittance were measured in the wavelength range from 0.3 to 2.5 {mu}m, at a number of intercalation levels. The polaron absorption peak becomes more symmetric and shifts to higher energies until an intercalation level of 0.25 to 0.3 Li{sup +}/W, where a saturation occurs. The shape of the polaron peak is in very good agreement with the theory of Bryksin [Fiz. Tverd. Tela 24, 1110 (1982)]. Within this model, the shift of the absorption peak is interpreted as an increase in the Fermi level of the material as more Li ions are inserted. {copyright} 2001 American Institute of Physics.

  16. Modeling tin whisker growth.

    SciTech Connect (OSTI)

    Weinberger, Christopher Robert

    2013-08-01

    Tin, lead, and lead-tin solders are the most commonly used solders due to their low melting temperatures. However, due to the toxicity problems, lead must now be removed from solder materials. This has lead to the re-emergence of the issue of tin whisker growth. Tin whiskers are a microelectronic packaging issue because they can lead to shorts if they grow to sufficient length. However, the cause of tin whisker growth is still not well understood and there is lack of robust methods to determine when and if whiskering will be a problem. This report summarizes some of the leading theories on whisker growth and attempts to provide some ideas towards establishing the role microstructure plays in whisker growth.

  17. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    DOE Patents [OSTI]

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  18. Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells

    SciTech Connect (OSTI)

    Ng, A.; Liu, X.; Sun, Y. C.; Djuriši?, A. B. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. (China); Ng, A. M. C. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China and Nanostructure Institute for Energy and Environmental Research, Division of Physical Sciences, South University of Science and Technology of China, Shenzhen (China); Chan, W. K. [Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. (China)

    2013-12-04

    We performed a systematic study of the effect of electron collecting metal oxide layer on the performance of P3HT: PCBM solar cells. Zinc oxide (ZnO) or titanium dioxide (TiO{sub 2}) buffer layers were prepared by either e-beam evaporation or solution processing method. We also compared the photovoltaic performance of inserting the buffer layer between indium tin oxide (ITO) and the polymer layer for the inverted structure (ITO/ ZnO or TiO{sub 2}/P3HT:PCBM/V{sub 2}O{sub 5}/Au) as well as inserting the buffers layers between the polymer and the aluminum electrode for the conventional structure (ITO/V{sub 2}O{sub 5}/P3HT:PCBM/ZnO or TiO{sub 2}/Al). The results are shown in detail.

  19. Discovery of the Indium Isotopes

    E-Print Network [OSTI]

    S. Amos; M. Thoennessen

    2010-09-08

    Thirty-eight indium isotopes (A = 98-135) have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  20. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  1. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  2. Enhanced electron collection in TiO{sub 2} nanoparticle-based dye-sensitized solar cells by an array of metal micropillars on a planar fluorinated tin oxide anode.

    SciTech Connect (OSTI)

    Yang, Z.; Xu, T.; Gao, S.; Welp, U.; Kwok, W.-K.; Materials Science Division; Northern Illinois Univ.

    2010-01-01

    Charge collection efficiency exhibits a strong influence on the overall efficiency of nanocrystalline dye-sensitized solar cells. It highly depends on the quality of the TiO{sub 2} nanoparticulate layer in the photoanode, and hence most efforts have been directed on the improvement and deliberate optimization of the quality the TiO{sub 2} nanocrystalline layer. In this work, we aim to reduce the electron collection distance between the place of origin in the TiO{sub 2} layer to the electron-collecting TCO anode as an alternative way to enhance the charge collection efficiency. We use an array of metal micropillars on fluorine-doped tin oxide (FTO) as the collecting anode. Under the same conditions, the Ni micropillar-on-FTO-based dye-sensitized solar cells (DSSCs) exhibit a remarkably enhanced current density, which is approximately 1.8 times greater compared with the bare FTO-based DSSCs. Electron transport was investigated using the electrochemical impedance spectroscopy technique. Our results reveal that the electron collection time in Ni micropillar-on-FTO-based DSSCs is much shorter than that of bare FTO-based DSSCs, indicating faster electron collection due to the Ni micropillars buried in TiO{sub 2} nanoparticulate layer that serve as electron transport shortcuts. As a result, the charge collection efficiency was enhanced by 15?20% with respect to that of the bare FTO-based DSSCs. Consequently, the overall energy conversion efficiency was found to increase from 2.6% in bare FTO-based DSSCs to 4.8% in Ni micropillar-on-FTO-based DSSCs for a 6 {micro}m-thick TiO{sub 2} NP film.

  3. INDIUM--2000 38.1 By Robert D. Brown, Jr.

    E-Print Network [OSTI]

    INDIUM--2000 38.1 INDIUM By Robert D. Brown, Jr. Domestic survey data and table were prepared by Carolyn F. Crews, statistical assistant. Indium production in the United States during 2000 was confined, were the major producers of indium metal and indium products in 2000. A number of smaller firms also

  4. INDIUM--1999 37.1 By Robert D. Brown

    E-Print Network [OSTI]

    INDIUM--1999 37.1 INDIUM By Robert D. Brown Domestic survey data and tables were prepared by Carolyn F. Crews, statistical assistant. Indium production in the United States during 1999 was confined, were the major producers of indium metal and indium products in 1999. A number of smaller firms also

  5. Discovery of the Tin Isotopes

    E-Print Network [OSTI]

    S. Amos; M. Thoennessen

    2010-09-08

    Thirty-eight tin isotopes have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  6. Method of preparing doped oxide catalysts for lean NOx exhaust

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-09

    The lean NOx catalyst includes a substrate, an oxide support material, preferably .gamma.-alumina deposited on the substrate and a metal or metal oxide promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium cerium, and vanadium, and oxides thereof, and any combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between 80 and 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to about 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical Behavior of Indium

  8. INDIUM--2001 37.1 By Robert D. Brown, Jr.

    E-Print Network [OSTI]

    INDIUM--2001 37.1 INDIUM By Robert D. Brown, Jr. Domestic survey data and tables were prepared in New York and Rhode Island, were the major producers of indium metal and indium products in 2001 products. Domestic consumption in 2001 was estimated by the U.S. Geological Survey to have increased

  9. Metal/metal oxide doped oxide catalysts having high deNOx selectivity for lean NOx exhaust aftertreatment systems

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-16

    A lean NOx catalyst and method of preparing the same is disclosed. The lean NOx catalyst includes a ceramic substrate, an oxide support material, preferably .gamma.-alumina, deposited on the substrate and a metal promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium, cerium, vanadium, oxides thereof, and combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between about 80 to 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  10. Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. It has been known as a conductive material when elements such as indium, gallium and aluminum are doped.

    E-Print Network [OSTI]

    oxide (ITO), graphene, and carbon nanotube film. In addition, a new generation solar cell electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order

  11. Walljet Electrochemistry: Quantifying Molecular Transport through Metallopolymeric and Zirconium

    E-Print Network [OSTI]

    Walljet Electrochemistry: Quantifying Molecular Transport through Metallopolymeric and Zirconium electrochemistry to the study of molecular transport through model metallopolymeric films on indium tin oxide

  12. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology. The primary objective of this project was to develop a commercially viable process for 'Substrates' (Substrate/ undercoat/ TCO topcoat) to be used in production of OLED devices (lamps/luminaries/modules). This project focused on using Arkema's recently developed doped ZnO technology for the Fenestration industry and applying the technology to the OLED lighting industry. The secondary objective was the use of undercoat technology to improve light extraction from the OLED device. In optical fields and window applications, technology has been developed to mitigate reflection losses by selecting appropriate thicknesses and refractive indices of coatings applied either below or above the functional layer of interest. This technology has been proven and implemented in the fenestration industry for more than 15 years. Successful completion of

  13. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sören; Jessen, Frank; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology.

  14. Intermetallic Reaction of Indium and Silver in an Electroplating Process

    E-Print Network [OSTI]

    Wang, Pin J.; Kim, Jong S.; Lee, Chin C.

    2009-01-01

    Indium and Silver in an Electroplating Process PIN J. WANG,silver (Ag) during the electroplating process of indium overAg layer, followed by electroplating an In layer with a

  15. Copper-silver-titanium-tin filler metal for direct brazing of structural ceramics

    DOE Patents [OSTI]

    Moorhead, Arthur J. (Knoxville, TN)

    1988-04-05

    A method of joining ceramics and metals to themselves and to one another at about 800.degree. C. is described using a brazing filler metal consisting essentially of 35 to 50 at. % copper, 40 to 50 at. % silver, 1 to 15 at. % titanium, and 2 to 8 at. % tin. This method produces strong joints that can withstand high service temperatures and oxidizing environments.

  16. Artificial fireball generation via an erosive discharge with tin alloy electrodes

    E-Print Network [OSTI]

    Pirozerski, A L; Lebedeva, E L; Borisov, B F; Khomutova, A S; Mavlonazarov, I O

    2015-01-01

    We propose a method for generation of long-living autonomous fireball-like objects via a pulse erosive discharge between tin alloy electrodes. The objects are similar to the natural ball lightning in some properties, in particular, they have high energy density and are capable to burn through thin metal foils. The dynamics of the objects are studied using high speed videorecording. During their lifetime the fireballs generate aerogel threads. The studies of their structure by scanning electron microscopy reveal the presence of tin oxide nanoparticles and nanowhiskers.

  17. Nanoscale Au-In alloy-oxide core-shell particles as electrocatalysts for efficient hydroquinone detection

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sutter, E.; Tong, X.; Medina-Plaza, C.; Rodriguez-Mendez, M. L.; Sutter, P.

    2015-10-09

    The presence of hydroquinone (HQ), a phenol ubiquitous in nature and widely used in industry, needs to be monitored because of its toxicity to the environment. Here we demonstrate efficient detection of HQ using simple, fast, and noninvasive electrochemical measurements on indium tin oxide (ITO) electrodes modified with nanoparticles comprising bimetallic Au–In cores and mixed Au–In oxide shells. Whereas bare ITO electrodes show very low activity for the detection of HQ, their modification with Au–In core–shell nanoparticles induces a pronounced shift of the oxidation peak to lower potentials, i.e., facilitated oxidation. The response of the different electrodes was correlated withmore »the initial composition of the bimetallic nanoparticle cores, which in turn determined the amount of Au and In stabilized on the surface of the amorphous Au–In oxide shells available for the electrochemical reaction. While adding core–shell nanostructures with different compositions of the alloy core facilitates the electrocatalytic (reduction-) oxidation of HQ, the activity is highest for particles with AuIn cores (i.e., a Au:In ratio of 1). This optimal system is found to follow a single pathway, the two-electron oxidation of the quinone–hydroquinone couple, which gives rise to high oxidation peaks and is most effective in facilitating the electrode-to-analyte charge transfer and thus detection. The limits of detection (LOD) decreased when increasing the amount of Au exposed on the surface of the amorphous Au–In oxide shells. As a result the LODs were in the range of 10–5 – 10–6 M and were lower than those obtained using bulk Au.« less

  18. Therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Mausner, Leonard F. (Stony Brook, NY); Atkins, Harold L. (Setauket, NY)

    2003-01-01

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

  19. Tin electroplating/stripping evaluation. Topical report

    SciTech Connect (OSTI)

    McHenry, M.R.

    1995-08-01

    An evaluation was conducted to determine possible replacement chemistries for electroplating and stripping of tin-lead. The driver for this project was two-fold. Our first goal dealt with hazardous waste reduction. It was desired to eliminate lead (a heavy metal) from the electroplating process and thiourea (a known carcinogen) from the stripping process. We also sought to reduce the cost of nonconformance (CONC) realized by this process in the form of rough plating, broken paths, poor solderability, and overetching. Three suppliers` tin chemistries were evaluated as replacements for electroplating and stripping of tin-lead. Based on preliminary testing, one chemistry was chosen, evaluated, and approved for production use.

  20. Reduction And Stabilization (Immobilization) Of Pertechnetate To An Immobile Reduced Technetium Species Using Tin(II) Apatite

    SciTech Connect (OSTI)

    Duncan, J. B.

    2012-11-02

    Synthetic tin(II)apatite reduces pertechnetate from the mobile +7 to a non-mobile oxidation state and sequesters the technetium, preventing re-oxidization to mobile +7 state under acidic or oxygenated conditions. Previous work indicated technetium reacted Sn(II)apatite can achieve an ANSI leachability index of 12.8 in Cast Stone. An effect by pH is observed on the distribution coefficient, the highest distribution coefficient being l70,900 observed at pH levels of 2.5 to 10.2. The tin apatite was resistant to releasing technetium under test conditions.

  1. (Data in metric tons, unless noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1995. Domestic indium

    E-Print Network [OSTI]

    from ores in the United States in 1995. Domestic indium production was derived from the upgrading producers of indium metal and indium products in 1995. Several firms produced high-purity indium shapes detectors, high-speed transistors, and high-efficiency photovoltaic devices. Estimated uses in 1995 were

  2. Part I Taxpayer Identification Number (TIN) Enter your TIN in the appropriate box. The TIN provided must match the name given on the "Name" line

    E-Print Network [OSTI]

    Part I Taxpayer Identification Number (TIN) Enter your TIN in the appropriate box. The TIN provided To : Requester Payroll Department Form W-9 Request for Taxpayer Identification Number and Certification. The number shown on this form is my correct taxpayer identification number (or I am waiting for a number

  3. Sputtering of neutral and ionic indium clusters

    SciTech Connect (OSTI)

    Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

    1993-10-01

    Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident {approximately}4 keV Ar{sup +} ions. In the secondary neutral mass spectra, indium clusters as large as In{sub 32} were observed. In the secondary ion mass spectra, indium clusters up to In{sub 18}{sup +} were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be {minus}5.6 and {minus}4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions.

  4. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  5. Design and fabrication of a tin-sulfide annealing furnace

    E-Print Network [OSTI]

    Lewis, Raymond (Raymond A.)

    2011-01-01

    A furnace was designed and its heat transfer properties were analyzed for use in annealing thin-film tins-ulfide solar cells. Tin sulfide has been explored as an earth abundant solar cell material, and the furnace was ...

  6. [Type here] Copper Indium Selenide (CIS) Solar Cell

    E-Print Network [OSTI]

    Hochberg, Michael

    [Type here] Copper Indium Selenide (CIS) Solar Cell CIS cells are made with a thin layer of CuInSe2) Solar Cell CIGs cells are made with a thin layer of copper indium gallium diselenide Cu(In, Ga)Se2 (CIGS). CIGS cells have up to 10% efficiency with similar durability as silicon solar cells. Since

  7. Microwave plasma CVD of NANO structured tin/carbon composites

    DOE Patents [OSTI]

    Marcinek, Marek (Warszawa, PL); Kostecki, Robert (Lafayette, CA)

    2012-07-17

    A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

  8. Fabrication, structure and mechanical properties of indium nanopillars

    SciTech Connect (OSTI)

    Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2010-01-01

    Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

  9. TIN--2001 78.1 By James F. Carlin, Jr.

    E-Print Network [OSTI]

    TIN--2001 78.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D firms consumed 83% of the reported primary tin used domestically in 2001. The major uses were as follows. The recycling rate for steel cans was 58% in 2001 and 2000, compared with 56% in 1995 and 15% in 1988

  10. TIN--1999 78.1 By James F. Carlin, Jr.

    E-Print Network [OSTI]

    TIN--1999 78.1 TIN By James F. Carlin, Jr. Domestic survey data and tables were prepared by Elsie D, international data coordinator. Tin was not mined in the United States during 1999. Twenty-five firms consumed at landfills. The recycling rate for steel cans was 58% in 1999, compared with 56% in 1998, 61% in 1997, 58

  11. Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films

    DOE Patents [OSTI]

    Giolando, Dean M.

    2003-09-30

    Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

  12. NMR studies of metallic tin confined within porous matrices

    SciTech Connect (OSTI)

    Charnaya, E. V.; Tien, Cheng; Lee, M. K.; Kumzerov, Yu. A.

    2007-04-01

    {sup 119}Sn NMR studies were carried out for metallic tin confined within synthetic opal and porous glass. Tin was embedded into nanoporous matrices in the melted state under pressure. The Knight shift for liquid confined tin was found to decrease with decreasing pore size. Correlations between NMR line shapes, Knight shift, and pore filling were observed. The melting and freezing phase transitions of tin under confinement were studied through temperature dependences of NMR signals upon warming and cooling. Melting of tin within the opal matrix agreed well with the liquid skin model suggested for small isolated particles. The influence of the pore filling on the melting process was shown.

  13. The natural and industrial cycling of indium in the environment

    E-Print Network [OSTI]

    White, Sarah Jane O'Connell

    2012-01-01

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling ...

  14. An evaluation of indium antimonide quantum well transistor technology

    E-Print Network [OSTI]

    Liu, Jingwei, M. Eng. Massachusetts Institute of Technology

    2006-01-01

    Motivated by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its ...

  15. Coating Single-Walled Carbon Nanotubes with Tin Oxide

    E-Print Network [OSTI]

    Zettl, Alex

    , and Pt by electron-beam evaporation or electroless metal deposition.2,5,11 Single amine-functionalized CdSe, transparent coatings, heterojunction solar cells, and chemical sensors. The deposition techniques used for Sn

  16. LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia

    E-Print Network [OSTI]

    Yong, Foo Nun

    2006-01-01

    Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase ...

  17. DESIGN OF A 10-T SUPERCONDUCTING DIPOLE MAGNET USING NIOBIUM-TIN CONDUCTOR

    E-Print Network [OSTI]

    Taylor, C.

    2011-01-01

    NIOBIUM-TIN CONOOCTOR' C. Taylor, R. Meuser. S. Caspi. W.NIOBIUM-TIN CONDUCTOR C. Taylor, R. Meuser, S. Caspi, W.NIOBIUM-TIN CONDUCTOR* C. Taylor, R. Meuser, S. Caspi, W.

  18. Fabrication of Transparent-Conducting-Oxide-Coated Inverse Opals as Mesostructured Architectures for Electrocatalysis Applications: A

    E-Print Network [OSTI]

    -doped indium oxide (ITO) via atomic layer deposition (ALD). We demonstrate the utility of the resulting, photocatalysis, and dye- sensitized solar cells. KEYWORDS: nickel oxide, water oxidation, atomic-layer deposition- layer deposition (ALD); the advantage of this protocol is that it is not necessary to devise ways

  19. Molten tin reprocessing of spent nuclear fuel elements

    DOE Patents [OSTI]

    Heckman, Richard A. (Castro Valley, CA)

    1983-01-01

    A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support the liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

  20. Radial Electron Collection in Dye-Sensitized Solar Cells

    E-Print Network [OSTI]

    Radial Electron Collection in Dye-Sensitized Solar Cells Alex B. F. Martinson,, Jeffrey W. Elam-sensitized solar cells (DSSCs). Atomic layer deposition is employed to grow indium tin oxide (ITO) within a porous

  1. Characterization of a Benzothiadiazole Derivative for Organic Electronic Applications

    E-Print Network [OSTI]

    Collins, Gary S.

    optical and electrical properties, and compatibility with high throughput, roll-to-roll processing solution processed by spin coating on a glass or indium-tin oxide (ITO) coated glass substrate with a 5

  2. Flexographically Printed Rechargeable Zinc-based Battery for Grid Energy Storage

    E-Print Network [OSTI]

    Wang, Zuoqian

    2013-01-01

    In roll-to-roll equipment, slot- die coating stations orroll processed polymer solar cells free from indium- tin-oxide and vacuum coatingroll processed polymer solar cell modules: methods and manufacture using flexographic printing, slot-die coating

  3. Modeling stress accelerated grain boundary oxidation (SAGBO) in INCOLOY alloy 908

    E-Print Network [OSTI]

    Soontrapa, Chaiyod

    2005-01-01

    This study explores the possibility of extending the Ph.D. work of Yan Xu on copper-tin alloys (University of Pennsylvania, 1999) to model stress accelerated grain boundary oxidation (SAGBO) in INCOLOY alloy 908. The steady ...

  4. Interim Results from a Study of the Impacts of Tin (II) Based Mercury Treatment in a Small Stream Ecosystem: Tims Branch, Savannah River Site

    SciTech Connect (OSTI)

    Looney, Brian [Savannah River National Laboratory (SRNL); BryanJr., Larry [Savannah River Ecology Laboratory; Mathews, Teresa J [ORNL; Peterson, Mark J [ORNL; Roy, W Kelly [ORNL; Jett, Robert T [ORNL; Smith, John G [ORNL

    2012-03-01

    A research team is assessing the impacts of an innovative mercury treatment system in Tims Branch, a small southeastern stream. The treatment system, installed in 2007, reduces and removes inorganic mercury from water using tin(II) (stannous) chloride addition followed by air stripping. The system results in discharge of inorganic tin to the ecosystem. This screening study is based on historical information combined with measurements of contaminant concentrations in water, fish, sediment, biofilms and invertebrates. Initial mercury data indicate that first few years of mercury treatment resulted in a significant decrease in mercury concentration in an upper trophic level fish, redfin pickerel, at all sampling locations in the impacted reach. For example, the whole body mercury concentration in redfin pickerel collected from the most impacted pond decreased approximately 72% between 2006 (pre-treatment) and 2010 (post-treatment). Over this same period, mercury concentrations in the fillet of redfin pickerel in this pond were estimated to have decreased from approximately 1.45 {micro}g/g (wet weight basis) to 0.45 {micro}g/g - a decrease from 4.8x to 1.5x the current EPA guideline concentration for mercury in fillet (0.3 {micro}g/g). Thermodynamic modeling, scanning electron microscopy, and other sampling data for tin suggest that particulate tin (IV) oxides are a significant geochemical species entering the ecosystem with elevated levels of tin measured in surficial sediments and biofilms. Detectable increases in tin in sediments and biofilms extended approximately 3km from the discharge location. Tin oxides are recalcitrant solids that are relatively non-toxic and resistant to dissolution. Work continues to develop and validate methods to analyze total tin in the collected biota samples. In general, the interim results of this screening study suggest that the treatment process has performed as predicted and that the concentration of mercury in upper trophic level fish, as a surrogate for all of the underlying transport and transformation processes in a complex ecosystem, has declined as a direct result of the elimination of inorganic mercury inputs. Inorganic tin released to the ecosystem has been found in compartments where particles accumulate with notable levels measured in biofilms.

  5. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOE Patents [OSTI]

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  6. Tin-silver-bismuth solders for electronics assembly

    DOE Patents [OSTI]

    Vianco, P.T.; Rejent, J.A.

    1995-08-08

    A lead-free solder alloy is disclosed for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218 C down to about 205 C depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10 C/min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight). 4 figs.

  7. Antimony-Doped Tin(II) Sulfide Thin Films

    E-Print Network [OSTI]

    Chakraborty, Rupak

    Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

  8. Tin-silver-bismuth solders for electronics assembly

    DOE Patents [OSTI]

    Vianco, Paul T. (Albuquerque, NM); Rejent, Jerome A. (Albuquerque, NM)

    1995-01-01

    A lead-free solder alloy for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218.degree. C. down to about 205.degree. C. depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10.degree. C./min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight).

  9. Atmospheric pressure chemical vapor deposition of transparent conducting films of fluorine doped zinc oxide and their application

    E-Print Network [OSTI]

    crystal flat panel displays, energy efficient windows, gas sensors, surface acoustic wave devices loss or diffusion, which can lead to degra- dation in solar cell efficiency. Zinc oxide is more stable conducting oxides. This suggests zinc oxide may lead to higher solar cell efficiency than tin oxide

  10. Chemoselective Pd-Catalyzed Oxidation of Polyols: Synthetic Scope and Mechanistic Studies

    E-Print Network [OSTI]

    Zare, Richard N.

    in the proposed catalytic cycle. INTRODUCTION Selective catalytic oxidation reactions are among the most useful methods with stoichiometric dioxiranes,23 tin oxides,10 catalytic RuCl3 in carefully buffered oxone,19,12,40 and triols.9 We recently described the selective catalytic oxidation of glycerol to dihydroxyacetone

  11. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  12. Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

    SciTech Connect (OSTI)

    Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Laukkanen, P. [Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland)] [Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Galatage, R. V. [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-05-27

    A crystalline oxide film on InAs(100) is investigated with in situ monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction before and after in situ deposition of Al{sub 2}O{sub 3} by atomic layer deposition (ALD) as well as upon air exposure. The oxidation process leads to arsenic and indium trivalent oxidation state formation. The grown epitaxial oxide-InAs interface is stable upon ALD reactor exposure; however, trimethyl aluminum decreases oxidation states resulting in an unreconstructed surface. An increase in oxide concentration is also observed upon air exposure suggesting the crystalline oxide surface is unstable.

  13. Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

    E-Print Network [OSTI]

    methods, such as pulsed laser deposition,10 solution deposition,11 inkjet printing12 and combustion13 have

  14. Reductive precipitation of metals photosensitized by tin and antimony porphyrins

    DOE Patents [OSTI]

    Shelnutt, John A.; Gong, Weiliang; Abdelouas, Abdesselam; Lutze, Werner

    2003-09-30

    A method for reducing metals using a tin or antimony porphyrin by forming an aqueous solution of a tin or antimony porphyrin, an electron donor, such as ethylenediaminetetraaceticacid, triethylamine, triethanolamine, and sodium nitrite, and at least one metal compound selected from a uranium-containing compound, a mercury-containing compound, a copper-containing compound, a lead-containing compound, a gold-containing compound, a silver-containing compound, and a platinum-containing compound through irradiating the aqueous solution with light.

  15. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing

    E-Print Network [OSTI]

    gallium diselenide (CIGS) solar cells require approximately 50 metric tons of indium to produce 1 gigawatt of solar power. Research was underway to develop a low-cost manufacturing process for flexible CIGS solar cells that would yield high productio

  16. Evaluation of Tin Plating for Multi Canister Overpack Seals

    SciTech Connect (OSTI)

    GRAVES, C.E.

    2000-12-07

    The Multi-Canister Overpack (MCO) incorporates plated seals for use with (1) the port cover plates, (2) process valves of the shield plug, and (3) test plug ofthe cover cap. These seals are required to maintain leakage rates as low as 10{sup -7} scc/atm-sec. in the cover cap to test plug seal. The seals are manufactured by EG&G division of Perkin Elmer. Currently, the MCO design calls for use of silver or gold plated seals in these locations. The seal plating materials are deposited on Inconel 718 or X-750 substrates. Some of these seals are reused several times in service on the MCO. The MCO manufacturer has built several MCOs and is in the leak testing stage and has had great difficulty obtaining acceptable leakage rates at their plant in Camden, New Jersey. The seal manufacturer was called in to evaluate the situation and now the seal manufacturer recommends tin plated seals. This evaluation examines the Corrosion resistance and thermal stability of tin plating on the seals. The use of tin plating on MCO seals was evaluated for corrosion resistance and thermal stability. The corrosion resistance of tin in the expected MCO environments is acceptable. The effect of radiation hardening will offset creep deformation results. However, a low melting point indicates unsuitability at significantly elevated temperatures.

  17. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  18. Indium-111-labeled platelets in monitoring human pancreatic transplants

    SciTech Connect (OSTI)

    Catafau, A.M.; Lomena, F.J.; Ricart, M.J.; Pons, F.; Piera, C.; Pavia, J.; Moragas, M.; Garcia, A.; Herranz, R.; Andreu, J. (Nuclear Medicine Service, Barcelona (Spain))

    1989-09-01

    We have performed 59 {sup 111}In-labeled platelet scintigraphies in 12 patients with pancreas transplant, and we have compared retrospectively the {sup 111}In platelet uptake with the graft immunological situation. A diffuse uptake in the graft was seen in five of six patients with pancreatic rejection. The scans became positive before changes in biochemical tests were detected. No {sup 111}In platelet uptake was seen in five of seven normally functioning grafts. Two cases of venous thrombosis and two perigraft hematomas appeared like a focal {sup 111}In platelet accumulation. Indium-111-labeled platelet scintigraphy can be a useful method for monitoring pancreas transplants. It may be helpful in the early detection of pancreatic allograft rejection and in the differential diagnosis between this and other complications such as thrombosis or hematomas.

  19. Synthesis of indium sulphide quantum dots in perfluoronated ionomer membrane

    SciTech Connect (OSTI)

    Sumi, R. [Centre for Nanotechnology Research, VIT University, Vellore (India); Warrier, Anita R.; Vijayan, C. [Department of Physics, Indian Institute of Technology, Chennai (India)

    2014-01-28

    In this paper, we demonstrate a simple and efficient method for synthesis of ?-indium sulphide (In{sub 2}S{sub 3}) nanoparticles embedded in an ionomer matrix (nafion membrane). The influence of reaction temperature on structural, compositional and optical properties of these films were analysed using X-Ray Diffraction, EDAX, UV-Vis absorption spectroscopy and photoluminescence studies. Average particle diameter was estimated using modified effective mass approximation method. Absorption spectra of In{sub 2}S{sub 3} nanoparticles show blue shift compared to bulk In{sub 2}S{sub 3}, indicating strong quantum size confinement effects. PL emission in the wavelength range 530–600 nm was recorded using a 488 nm line from an Ar{sup +} laser as the excitation source.

  20. Photoconductivity in reactively evaporated copper indium selenide thin films

    SciTech Connect (OSTI)

    Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

    2014-01-28

    Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

  1. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    using roll-to-roll methods: Knife-over- edge coating, slot-die coating and screen printing,” Solar Energy Materials andCells using Cadmium Sulfide Coating on Indium Phosphide

  2. An investigation of the cadmium absorption of resonance neutrons in cadmium covered indium foils 

    E-Print Network [OSTI]

    Powell, James Edward

    1963-01-01

    AN INVESTIGATION OF THE CADMIUM ABSORPTION OF RESONANCE NEUTRONS IN CADMIUM COVERED INDIUM FOILS A Thesis by JAMES EDWARD POWELL Submitted to the Graduate School of the Agricultural and Mechanical College of Texas in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE August 1963 Major Subject Nuclear Engineering AN INVESTIGATION OF THE CADMIUM ABSORPTION OF RESONANCE NEUTRONS IN CADMIUM COVERED INDIUM FOILS A Thesis by JAMES EDWARD POWELL Approved as to style...

  3. Coating power RF components with TiN

    SciTech Connect (OSTI)

    Kuchnir, M.; Hahn, E.

    1995-03-01

    A facility for coating RF power components with thin films of Ti and/or TiN has been in operation for some time at Fermilab supporting the Accelerator Division RF development work and the TESLA program. It has been experimentally verified that such coatings improve the performance of these components as far as withstanding higher electric fields. This is attributed to a reduction in the secondary electron emission coefficient of the surfaces when coated with a thin film containing titanium. The purpose of this Technical Memorandum is to describe the facility and the procedure used.

  4. Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery

    DOE Patents [OSTI]

    Neudecker, Bernd J. (Knoxville, TN); Bates, John B. (Oak Ridge, TN)

    2001-01-01

    Disclosed are silicon-tin oxynitride glassy compositions which are especially useful in the construction of anode material for thin-film electrochemical devices including rechargeable lithium-ion batteries, electrochromic mirrors, electrochromic windows, and actuators. Additional applications of silicon-tin oxynitride glassy compositions include optical fibers and optical waveguides.

  5. Sputtered TiN films for superconducting coplanar waveguide resonators S. Ohya,1, a)

    E-Print Network [OSTI]

    Martinis, John M.

    Sputtered TiN films for superconducting coplanar waveguide resonators S. Ohya,1, a) B. Chiaro,2 A control the energy of these particles to obtain high-quality TiN films. Superconducting coplanar waveguideN in larger circuits. I. INTRODUCTION Superconducting coplanar-waveguide (SCPW) res- onators are used

  6. Monomer-Capped Tin Metal Nanoparticles for Anode Materials in Lithium Secondary Batteries

    E-Print Network [OSTI]

    Cho, Jaephil

    Monomer-Capped Tin Metal Nanoparticles for Anode Materials in Lithium Secondary Batteries Mijung Graphite can store 372 mAh/g corresponding to LiC6, and tin can store 970 mAh/g corresponding to Li4.4Sn close to graphite. The reason for failure is believed to be the inhomogeneous volume expansion

  7. TESLA Report 2004-02 Anti-multipactor TiN coating of RF power

    E-Print Network [OSTI]

    N layers generation on surfaces which were not protected in this way previously. Thin TiN films on ceramicTESLA Report 2004-02 1 Anti-multipactor TiN coating of RF power coupler components for TESLA performance of couplers) J. Lorkiewicz1 , The Andrzej Soltan Institute for Nuclear Studies, Pl 05-400 Otwock

  8. Hydrogenation of palladium rich compounds of aluminium, gallium and indium

    SciTech Connect (OSTI)

    Kohlmann, H.

    2010-02-15

    Palladium rich intermetallic compounds of aluminium, gallium and indium have been studied before and after hydrogenation by powder X-ray diffraction and during hydrogenation by in situ thermal analysis (DSC) at hydrogen gas pressures up to 39 MPa and temperatures up to 700 K. Very weak DSC signals and small unit cell increases of below 1% for AlPd{sub 2}, AlPd{sub 3}, GaPd{sub 2}, Ga{sub 5}Pd{sub 13}, In{sub 3}Pd{sub 5}, and InPd{sub 2} suggest negligible hydrogen uptake. In contrast, for both tetragonal modifications of InPd{sub 3} (ZrAl{sub 3} and TiAl{sub 3} type), heating to 523 K at 2 MPa hydrogen pressure leads to a rearrangement of the intermetallic structure to a cubic AuCu{sub 3} type with an increase in unit cell volume per formula unit by 3.6-3.9%. Gravimetric analysis suggests a composition InPd{sub 3}H{sub a}pprox{sub 0.8} for the hydrogenation product. Very similar behaviour is found for the deuteration of InPd{sub 3}. - Graphical abstract: In situ differential scanning calorimetry of the hydrogenation of tetragonal InPd{sub 3} (ZrAl{sub 3} type) at 1.3 MPa hydrogen pressure.

  9. Mitigation of Sulfur Poisoning of Ni/Zirconia SOFC Anodes by Antimony and Tin

    SciTech Connect (OSTI)

    Marina, Olga A.; Coyle, Christopher A.; Engelhard, Mark H.; Pederson, Larry R.

    2011-02-28

    Surface Ni/Sb and Ni/Sb alloys were found to efficiently minimize the negative effects of sulfur on the performance of Ni/zirconia anode-supported solid oxide fuel cells (SOFC). Prior to operating on fuel gas containing low concentrations of H2S, the nickel/zirconia anodes were briefly exposed to antimony or tin vapor, which only slightly affected the SOFC performance. During the subsequent exposures to 1 and 5 ppm H2S, increases in anodic polarization losses were minimal compared to those observed for the standard nickel/zirconia anodes. Post-test XPS analyses showed that Sb and Sn tended to segregate to the surface of Ni particles, and further confirmed a significant reduction of adsorbed sulfur on the Ni surface in Ni/Sn and Ni/Sb samples compared to the Ni. The effect may be the result of weaker sulfur adsorption on bimetallic surfaces, adsorption site competition between sulfur and Sb or Sn on Ni, or other factors. The use of dilute binary alloys of Ni-Sb or Ni-Sn in the place of Ni, or brief exposure to Sb or Sn vapor, may be effective means to counteract the effects of sulfur poisoning in SOFC anodes and Ni catalysts. Other advantages, including suppression of coking or tailoring the anode composition for the internal reforming, are also expected.

  10. Molten tin reprocessing of spent nuclear fuel elements. [Patent application; continuous process

    DOE Patents [OSTI]

    Heckman, R.A.

    1980-12-19

    A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support te liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

  11. A novel approach to lead isotope provenance studies of tin and bronze: applications to South African, Botswanan and Romanian

    E-Print Network [OSTI]

    Fay, Noah

    of cassiterite, the dominant ore of tin, evolve after crystallization through decay of uranium (U) and thorium on this isochron, we deduce that they were made with tin from either the Rooiberg deposits or similar age deposits to a Variscan age (~0.3 Ga), suggesting a central or western European tin deposit as its source, since

  12. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  13. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  14. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    E-Print Network [OSTI]

    Zhu, Yuankun

    2014-01-01

    7. Optical bandgap of the doped CdO thin films as a functionelectrical properties of In-doped CdO thin films fabricatedand transparent Ti-doped CdO films by pulsed laser

  15. The Structure and Properties of Amorphous Indium Oxide D. Bruce Buchholz,

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    , for optimized materials.15 The electrical and optical properties of crystalline TCOs and TOSs (c-TCOs and c-TOSs would afford the same opportunity for materials optimization. There is, however, a much smaller*, Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United

  16. Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

    SciTech Connect (OSTI)

    Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

    2011-04-15

    In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

  17. Highly Scalable, Uniform, and Sensitive Biosensors Based on Top-Down Indium Oxide Nanoribbons

    E-Print Network [OSTI]

    Zhou, Chongwu

    . Streptavidin conjugated Alexar Fluor 568 was purchased from Life Technologies. Amine-PEG3- Biotin was purchased from Thermo Scientific. Amine PEG was purchased from Nanonocs. Streptavidin conjugated with 20 nm Au acetone and isopropyl alcohol for 5 minutes before dried in N2 stream. To generate hydroxyl groups

  18. High-performance, transparent conducting oxides based on cadmium stannate

    SciTech Connect (OSTI)

    Coutts, T.J.; Wu, X.; Mulligan, W.P.; Webb, J.M.

    1996-06-01

    We discuss the modeling of thin films of transparent conducting oxides and we compare the predictions with the observed properties of cadmium stannate. Thin films of this material were deposited using radio-frequency magnetron sputtering. The Drude free-carrier model is used to model the optical and electrical properties. The model demonstrates the need for high mobilities. The free-carrier absorbance in the visible spectrum is used as a comparative figure-of-merit for cadmium stannate and tin oxide. This shows that free-carrier absorbance is much less in cadmium stannate than in tin oxide. X-ray diffraction shows that annealed films consist of a single-phase spinel structure. The post-deposition annealing sequence is shown to be crucial to forming a single phase, which is vital for optimal optical and electrical properties. The films are typically high mobility (up to 65 cm{sup 2}V{sup -1}s{sup -1}) and have carrier concentrations as high as 10{sup 21} cm{sup -3}. Resistivities are as low as 1.3 10{sup -4} {Omega} cm, the lowest values reported for cadmium stannate. Atomic force microscopy indicates that the root-mean-square surface roughness is approximately {+-}15A. Cadmium stannate etches readily in both hydrofluoric and hydrochloric acid, which is a commanding advantage over tin oxide. 11 refs., 15 figs.

  19. Optical and Structural Characterizations of Tin Phthalocvanine Thin Films

    SciTech Connect (OSTI)

    Cherian, Regimol C.; Menon, C. S. [School of Pure and Applied Physics, Mahatma Gandhi University Priyadarshini Hills P.O., Kottayam-686560, Kerala (India)

    2008-04-23

    Phthalocyanines are today regarded as optical materials, which applies to organic dye lasers. The analysis of the optical properties of these thin films enforces the application in the field of thin film optics. Tin phthalocyanine (SnPc) thin films used for the characterization studies are prepared by thermal evaporation technique. The variation of optical band gap with irradiation of heat radiation and post deposition heat treatment are studied from the absorption spectra. Structural properties have been analyzed using the X-ray diffractogram of SnPc powder and thin films. The structure is identified as monoclinic with a = 12.132 A, b = 8.712 A, c = 10.806 A and {beta} = 108.85 deg. The grain size increases with increase of annealing temperature. The SEM images show a rough corrugated surface. Due to heat treatment, crystallites grow into bigger size.

  20. Simulation studies for Tin Bolometer Array for Neutrinoless Double Beta Decay

    E-Print Network [OSTI]

    V. Singh; N. Dokania; S. Mathimalar; V. Nanal; R. G. Pillay

    2015-07-31

    It is important to identify and reduce the gamma radiation which can be a significant source of background for any double beta decay experiment. The TIN.TIN detector array, which is under development for the search of Neutrinoless Double Beta Decay in $^{124}$Sn, has the potential to utilize the hit multiplicity information to discriminate the gamma background from the events of interest. Monte Carlo simulations for optimizing the design of a Tin detector module has been performed by varying element sizes with an emphasis on the gamma background reduction capabilities of the detector array.

  1. Simulation studies for Tin Bolometer Array for Neutrinoless Double Beta Decay

    E-Print Network [OSTI]

    V. Singh; N. Dokania; S. Mathimalar; V. Nanal; R. G. Pillay

    2014-08-20

    It is important to identify and reduce the gamma radiation which can be a significant source of background for any double beta decay experiment. The TIN.TIN detector array, which is under development for the search of Neutrinoless Double Beta Decay in $^{124}$Sn, has the potential to utilize the hit multiplicity information to discriminate the gamma background from the events of interest. Monte Carlo simulations for optimizing the design of a Tin detector module has been performed by varying element sizes with an emphasis on the gamma background reduction capabilities of the detector array.

  2. Film Coating Process Research and Characterization of TiN Coated Racetrack-type Ceramic Pipe

    E-Print Network [OSTI]

    Wang, Jie; Zhang, Bo; Wei, Wei; Fan, Le; Pei, Xiangtao; Hong, Yuanzhi; Wang, Yong

    2015-01-01

    TiN film was coated on the internal face of racetrack-type ceramic pipe by three different methods: radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of TiN film under different coating methods were compared. According to the AFM, SEM, XPS test results,these properties were analyzed, such as TiN film roughness and surface morphology. At the same time, the deposition rates were studied under two types' cathode, Ti wires and Ti plate. According to the SEM test results, Ti plate cathode can improve the TiN/Ti film deposition rate obviously.

  3. Basic properties of a liquidt in anode solid oxide fuel cell

    SciTech Connect (OSTI)

    Harry Abernathy; RandallGemmen; KirkGerdes; Mark Koslowske; ThomasTao

    2010-12-17

    An unconventional high temperature fuel cell system, the liquidt in anode solid oxide fuel cell(LTA-SOFC), is discussed. A thermodynamic analysis of a solid oxide fuel cell with a liquid metal anode is developed. Pertinent thermo chemical and thermo physical properties of liquid tin in particular are detailed. An experimental setup for analysis of LTA-SOFC anode kinetics is described, and data for a planar cell under hydrogen indicated an effective oxygen diffusion coefficient of 5.3×10?5 cm2 s?1 at 800 ?C and 8.9×10?5 cm2 s?1 at 900 ?C. This value is similar to previously reported literature values for liquid tin. The oxygen conductivity through the tin, calculated from measured diffusion coefficients and theoretical oxygen solubility limits, is found to be on the same order of thatofyttria-stabilizedzirconia(YSZ), a traditional SOFC electrolyte material. As such,the ohmicloss due to oxygen transport through the tin layer must be considered in practical system cell design since the tin layer will usually be at least as thick as the electrolyte.

  4. Novel Materials and Devices 1 Abstract --Recently, there has been a lot of interest in

    E-Print Network [OSTI]

    Alam, Muhammad A.

    shows the simplified schematic of an organic excitonic solar cell and various aspects involved and high efficiency solar cells due to cost advantages of roll to roll printing. Traditionally, ITO (Indium Tin Oxide) or ZnO (Zinc Oxide) electrodes have been used as top contacts for solar cells because

  5. Spectroscopic properties of colloidal indium phosphide quantum wires

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Wang, Fudong; Yu, Heng; Li, Jingbo; Hang, Qingling; Zemlyanov, Dmitry; Gibbons, Patrick C.; Wang, Lin-Wang; Janes, David B.; Buhro, William E.

    2008-07-11

    Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photo-oxidation, without a significant influence on quantum-wire photoluminescence. However, photo-oxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation, and that colloidal quantum wires have intrinsically low photoluminescence efficiencies.

  6. Liquid precursor for deposition of indium selenide and method of preparing the same

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

    2015-09-22

    Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

  7. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

    E-Print Network [OSTI]

    Rogers, John A.

    -state lighting Hoon-sik Kima,1 , Eric Bruecknerb,1 , Jizhou Songc,1 , Yuhang Lid,e , Seok Kima , Chaofeng Lud with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements this materials technology into light- ing modules that manage light conversion, extraction, and distri- bution

  8. Copyright by Ming Zhang, 2003 THERMAL PROPERTIES OF INDIUM NANOPARTICLES AND GOLD SILICIDE

    E-Print Network [OSTI]

    Allen, Leslie H.

    SILICIDE FORMATION BY SCANNING NANOCALORIMETRY BY MING ZHANG B. Engr., Tsinghua University, 1996 M. Engr of Illinois at Urbana-Champaign, 2003 Urbana, Illinois #12;iii THERMAL PROPERTIES OF INDIUM NANOPARTICLES AND GOLD SILICIDE FORMATION BY SCANNING NANOCALORIMETRY Ming Zhang Department of Material Science

  9. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A conversion efficiency of solar cells made from this material [1]. One of the special qualities of the CIGS improve the solar cell performance. In many of the different CIGS fabrication techniques, an in depth

  10. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS Cantilever Resonator

    E-Print Network [OSTI]

    Rubloff, Gary W.

    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS, microelectromechanical system (MEMS) cantilevers, pentacene, III­V MEMS. I. INTRODUCTION THE NEED to monitor. Fan, N. Goldsman, and R. Ghodssi are with the MEMS Sensors and Actuators Laboratory, Department

  11. Transport in indium-decorated graphene U. Chandni, Erik A. Henriksen,

    E-Print Network [OSTI]

    Eisenstein, Jim

    . California Blvd., Pasadena, California 91125, USA (Dated: March 16, 2015) The electronic transport propertiesTransport in indium-decorated graphene U. Chandni, Erik A. Henriksen, and J.P. Eisenstein Institute of Quantum Information and Matter, Department of Physics, California Institute of Technology, 1200 E

  12. The Effects of pH Variation on Whisker Growth on Tin Plated Copper

    E-Print Network [OSTI]

    Collins, Gary S.

    the effects of changing the pH levels in the electroplating solution on tin whisker growths. Procedures, 2, and 3 showing the Same matte surface finish Diagram of the electroplating apparatus Table

  13. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect (OSTI)

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4?nm in size) in the amorphous matrix of Si{sub 1?x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300?°C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1?x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ?80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  14. Measurement of light capture in solar cells from silver- and tin-plated patterned bus bars

    E-Print Network [OSTI]

    Winiarz, Christine Eve

    2007-01-01

    Bus bars on solar cells shade silicon from light. When the bus bars are patterned, they can reflect light back onto the silicon using total internal reflection. These patterned bus bars are tin plated and produce 1-2.5% ...

  15. Three-dimensional defect characterization : focused ion beam tomography applied to tin sulfide thin films

    E-Print Network [OSTI]

    Youssef, Amanda

    2014-01-01

    Porosity is postulated to be one of the reasons for the low efficiency of tin sulfide-based devices. This work is a preliminary investigation of the effects of two film growth parameters deposition rate and substrate ...

  16. Low-Energy Electron Microscopy Studies of Interlayer Mass Transport Kinetics on TiN(111)

    E-Print Network [OSTI]

    Israeli, Navot

    on cutting tools, diffusion-barriers in microelectronic devices, corrosion- resistant layers on mechanicalCl-structure TiN and related transition-metal (TM) nitrides are widely used as hard wear- resistant coatings

  17. Atmospheric Pressure Chemical Vapour Deposition of Fluorine-doped Tin(IV) Oxide from Fluoroalkyltin Precursors 

    E-Print Network [OSTI]

    Stanley, Joanne E; Swain, Anthony C; Molloy, Kieran C; Rankin, David W H; Robertson, Heather E; Johnston, Blair F

    2005-01-01

    Perfluoroalkytin compounds R(4-n)Sn(Rf)n (R = Me, Et, Bu, Rf = C4F9, n = 1; R = Bu, Rf = C4F9, n = 2, 3; R = Bu, Rf = C6F13, n = 1) have been synthesised, characterised by 1H, 13C, 19F and 119Sn NMR and evaluated a ...

  18. Thermally Activated, Inverted Interfacial Electron Transfer Kinetics: High Driving Force Reactions between Tin Oxide Nanoparticles and

    E-Print Network [OSTI]

    activation limit as: where In the equations, G* is the activation free energy, Hab is the coupling constant to the interest in these systems for solar energy conversion.10-12 In such systems, the two important interfacial behavior can also be observed via pH-induced manipulation of the conduction band-edge energy and, therefore

  19. Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles

    E-Print Network [OSTI]

    Thibado, Paul M.

    -type inorganic nanocrystals formed from materials such as ZnO, TiO2, SnO2, etc.2,3 In particular, SnO2,8 Single-walled carbon nanotubes promise even more efficient conversion due to their potentially large sur carbon nanotubes by a chemical solution route.10 Nanotubes have proved difficult to work with, however

  20. One-pot synthesis of highly mesoporous antimony-doped tin oxide from

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesseworkSURVEY UNIVERSEHowScientificOmbuds OfficeOne Vaccine LeadsOne

  1. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, J.W.

    1992-09-15

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  2. Solder for oxide layer-building metals and alloys

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1992-01-01

    A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

  3. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more »With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  4. Temperature sensibility of the birefringence properties in side-hole photonic crystal fiber filled with Indium

    SciTech Connect (OSTI)

    Reyes-Vera, Erick Gómez-Cardona, Nelson D.; Chesini, Giancarlo; Cordeiro, Cristiano M. B.; Torres, Pedro

    2014-11-17

    We report on the temperature sensitivity of the birefringence properties of a special kind of photonic crystal fiber containing two side holes filled with Indium metal. The modulation of the fiber birefringence is accomplished through the stress field induced by the expansion of the metal. Although the fiber was made at low gas pressures during the indium infiltration process, the birefringence showed anomalous property at a relatively low temperature value, which is completely different from those reported in conventional-like fibers with two holes filled with metal. By modeling the anisotropic changes induced by the metal expansion to the refractive index within the fiber, we are able to reproduce the experimental results. Our results have practical relevance for the design of devices based on this technology.

  5. Indium diffusion through high-k dielectrics in high-k/InP stacks

    SciTech Connect (OSTI)

    Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Galatage, R. V. [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-08-05

    Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

  6. The Dhiban Excavation and Development Project's 2005 Season

    E-Print Network [OSTI]

    2010-01-01

    copper and cobalt. Lead-tin yellow, tin oxide and copper-redoccurrences of lead-tin yel- low, tin oxide and copper-red.

  7. Cluster formation probability in the trans-tin and trans-lead nuclei

    E-Print Network [OSTI]

    K. P. Santhosh; R. K. Biju; Sabina Sahadevan

    2010-05-10

    Within our fission model, the Coulomb and proximity potential model (CPPM) cluster formation probabilities are calculated for different clusters ranging from carbon to silicon for the parents in the trans-tin and trans- lead regions. It is found that in trans-tin region the 12^C, 16^O, 20^Ne and 24^Mg clusters have maximum cluster formation probability and lowest half lives as compared to other clusters. In trans-lead region the 14^C, 18, 20^O, 23^F, 24,26^Ne, 28,30^Mg and 34^Si clusters have the maximum cluster formation probability and minimum half life, which show that alpha like clusters are most probable for emission from trans-tin region while non-alpha clusters are probable from trans-lead region. These results stress the role of neutron proton symmetry and asymmetry of daughter nuclei in these two cases.

  8. State of the Art Power-in Tube Niobium-Tin Superconductors

    SciTech Connect (OSTI)

    Godeke, A.; Ouden, A. Den; Nijhuis, A.; ten Kate, H.H.J.

    2008-06-01

    Powder-in-Tube (PIT) processed Niobium-Tin wires are commercially manufactured for nearly three decades and have demonstrated a combination of very high current density (presently up to 2500 A mm{sup -2} non-Cu at 12 T and 4.2 K) with fine (35 {micro}m), well separated filaments. We review the developments that have led to the present state of the art PIT Niobium-Tin wires, discuss the wire manufacturing and A15 formation processes, and describe typical superconducting performance in relation to magnetic field and strain. We further highlight successful applications of PIT wires and conclude with an outlook on possibilities for further improvements in the performance of PIT Niobium-Tin wires.

  9. Tin-117m-labeled stannic (Sn.sup.4+) chelates

    DOE Patents [OSTI]

    Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Richards, Powell (Bayport, NY)

    1985-01-01

    The radiopharmaceutical reagents of this invention and the class of Tin-117m radiopharmaceuticals are therapeutic and diagnostic agents that incorporate gamma-emitting nuclides that localize in bone after intravenous injection in mammals (mice, rats, dogs, and rabbits). Images reflecting bone structure or function can then be obtained by a scintillation camera that detects the distribution of ionizing radiation emitted by the radioactive agent. Tin-117m-labeled chelates of stannic tin localize almost exclusively in cortical bone. Upon intravenous injection of the reagent, the preferred chelates are phosphonate compounds, preferable, PYP, MDP, EHDP, and DTPA. This class of reagents is therapeutically and diagnostically useful in skeletal scintigraphy and for the radiotherapy of bone tumors and other disorders.

  10. Tin Anode for Sodium-Ion Batteries Using Natural Wood Fiber as a Mechanical Buffer and Electrolyte Reservoir

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Tin Anode for Sodium-Ion Batteries Using Natural Wood Fiber as a Mechanical Buffer and Electrolyte Information ABSTRACT: Sodium (Na)-ion batteries offer an attractive option for low cost grid scale storage due to the abundance of Na. Tin (Sn) is touted as a high capacity anode for Na-ion batteries with a high theoretical

  11. Crystal chemistry and self-lubricating properties of monochalcogenides gallium selenide and tin selenide

    SciTech Connect (OSTI)

    Erdemir, A.

    1993-02-01

    This paper describes the fundamentals of the crystal chemistry and self-lubricating mechanisms of two monochalcogenides; tin selenide and gallium selenide. Specifically, it enumerates their inter-atomic array and bond structure in crystalline states, and correlates this fundamental knowledge with their self-lubricating capacity. Friction tests assessing the self-lubricating performance of gallium and tin selenides were carried out on a pin-on-disk machine. Specifically, large crystalline pieces of gallium selenide and tin selenide were cut and cleaved into flat squares and subsequently rubbed against the sapphire balls. In another case, the fine powders (particle size {approx} 50--100 {mu}m) of gallium selenide and tin selenide were manually fed into the sliding interfaces of 440C pins and 440C disks. For the specific test conditions explored, it was found that the friction coefficients of the sapphire/gallium selenide and sapphire/tin selenide pairs were {approx} 0.23 and {approx} 0.35, respectively. The friction coefficients of 440C pin/440C disk test pairs with gallium selenide and tin selenide powders were on the orders of {approx} 0.22 and {approx} 0.38, respectively. For comparison, a number of parallel friction tests were performed with MoS{sub 2} powders and compacts and the results of these tests were also reported. The friction data together with the crystal-chemical knowledge and the electron microscopic evidence supported the conclusion that the lubricity and self-lubricating mechanisms of these solids are closely related to their crystal chemistry and the nature of interlayer bonding.

  12. The Dependence of the Oxidation Enhancement of InP(100) Surface on the Coverage of the Adsorbed Cs

    SciTech Connect (OSTI)

    Sun, Yun

    2010-06-07

    We report the oxidation of the InP(100) surface promoted by adsorbed Cs by synchrotron radiation photoemission. Oxygen exposure causes reduction of the charge transferred to the InP substrate from Cs and the growth of indium oxide and phosphorous oxide. The oxide growth displays a clear dependence on the Cs coverage. The oxidation of phosphorous is negligible up to 1000 L of O{sub 2} exposure when the Cs coverage is less than half a monolayer (ML), but the formation of the second half monolayer of Cs greatly accelerates the oxidation. This different enhancement of the InP oxidation by the first and the second half monolayer of Cs is due to the double layer structure of the adsorbed Cs atoms, and consequently the higher 6s electron density in the Cs atoms when Cs coverage is larger than 0.5 ML.

  13. Tridentate ligated heteronuclear tin(II) alkoxides for use as base catalysts

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM)

    2001-01-01

    Tin alkoxide compounds are provided with accessible electrons. The tin alkoxide compound have the general formula (THME).sub.2 Sn.sub.3 (M(L).sub.x).sub.y, where THME is (O--CH.sub.2).sub.3 C(CH.sub.3), M is a metal atom selected from Sn and Ti, L is an organic/inorganic ligand selected from an alkoxide, a phenoxide or an amide, x is selected from 2 and 4 and y is selected from 0 and 1. These compounds have applicability as base catalysts in reactions and in metal-organic chemical vapor depositions processes.

  14. Process for light-driven hydrocarbon oxidation at ambient temperatures

    DOE Patents [OSTI]

    Shelnutt, John A. (Tijeras, NM)

    1990-01-01

    A photochemical reaction for the oxidation of hydrocarbons uses molecular oxygen as the oxidant. A reductive photoredox cycle that uses a tin(IV)- or antimony(V)-porphyrin photosensitizer generates the reducing equivalents required to activate oxygen. This artificial photosynthesis system drives a catalytic cycle, which mimics the cytochrome P.sub.450 reaction, to oxidize hydrocarbons. An iron(III)- or manganese(III)-porphyrin is used as the hydrocarbon-oxidation catalyst. Methylviologen can be used as a redox relay molecule to provide for electron-transfer from the reduced photosensitizer to the Fe or Mn porphyrin. The system is long-lived and may be used in photo-initiated spectroscopic studies of the reaction to determine reaction rates and intermediates.

  15. Photoinduced Thermal Copper Reduction onto Gold Nanocrystals under Potentiostatic Peter L. Redmond,* Erich C. Walter, and Louis E. Brus

    E-Print Network [OSTI]

    orders of magnitude. Von Gutfeld et al. first reported laser-induced thermal electroplating in 1979 to ITO by organic molecule linkers.11 They found that laser irradiation of the nanoparticle-coated slides.5 nm) were prepared using standard electron beam lithography on indium tin oxide (ITO) coated glass

  16. ISDRS 2011, December 7-9, 2011, College Park, MD, USA ISDRS 2011 http://www.ece.umd.edu/ISDRS2011

    E-Print Network [OSTI]

    Rubloff, Gary W.

    by estimating the failure effect probability (), failure mode ratio (), failure rate () and the operating time electrical contact to the semiconductor chip), Indium Tin Oxide (ITO) surface layer (used to improve current distributions, data and results from previous investigations were utilized [5-33] where reliability test results

  17. Edge-emission electroluminescence study of as-grown vertical-cavity surface-emitting laser structures

    E-Print Network [OSTI]

    Ghosh, Sandip

    Edge-emission electroluminescence study of as-grown vertical-cavity surface-emitting laser 22 April 2000 We report polarized edge- and front-emission electroluminescence studies on red on pieces of as-grown wafers using indium­tin­oxide-coated glass electrodes. The front-emission spectra

  18. Liquid-Crystal Photoalignment by Super Thin Azo Dye Layer Xihua LI, Vladimir M. KOZENKOV, Fion Sze-Yan YEUNG, Peizhi XU, Vladimir G. CHIGRINOV and Hoi-Sing KWOK

    E-Print Network [OSTI]

    knitwear and uniform alignment by azo dye layer without spin coating and rubbing processes. The thickness, better adhesion on indium tin oxide (ITO) surface and compatibility with roll-to-roll process. [DOI: 10. On the other hand, the spin coating is needed in liquid crystal display (LCD) fabrication process to be sure

  19. Improvement of field emission from printed carbon nanotubes by a critical H. J. Lee,a

    E-Print Network [OSTI]

    Hwang, Sung Woo

    organic residues. Therefore, various surface treatment methods such as soft rubber roller,5 plasma current and a uniform emis- sion site. The soft rubber roller and adhesive taping tech- niques appear of indium tin oxide ITO -coated soda lime glass substrate. Two samples were dried at 120 °C for 1 h

  20. Formation of Highly Dense Aligned Ribbons and Transparent Films of

    E-Print Network [OSTI]

    Wikswo, John

    - natives for indium tin oxide (ITO) coatings which are notorious for being fragile and expensive to produce.13 Currently, ITO coat- ings are utilized in a wide range of applica- tions, including touch, we use a roller which acts to compress the film and preserve the alignment of nanotubes within

  1. Electrochemical Monitoring of TiO2 Atomic Layer Deposition by Chronoamperometry and Scanning Electrochemical Microscopy

    E-Print Network [OSTI]

    Yu, Edward T.

    Electrochemical Monitoring of TiO2 Atomic Layer Deposition by Chronoamperometry and Scanning) was used to characterize the atomic layer deposition (ALD) of TiO2 on indium-doped tin oxide (ITO). KEYWORDS: atomic layer deposition (ALD), scanning electrochemical microscopy (SECM), nanoporous films

  2. Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation

    E-Print Network [OSTI]

    Lee, Jong Duk

    to the conclusion that phosphorus ions and defects in the Si­diamond interface play an important role. INTRODUCTION A new mold type diamond field emission array FEA has been fabricated on indium tin oxide ITO defects induce the split energy bands within the wide band gap of diamond and help electrons to jump

  3. Highly efficient electrochemiluminescence from Ru,,II... complex with PEO-PHP-PEO as a buffer layer

    E-Print Network [OSTI]

    Wan, Xin-hua

    CF3SO3 was introduced into light-emitting electrochemical cells. The response rate and efficiency of indium tin oxide/PEO-PHP-PEO LiCF3SO3 / Ru bpy 3 PF6 2/Au, showed a turn-on voltage as low as 2.85 V

  4. High-Performance Contacts in Plastic Transistors and Logic Gates That Use Printed Electrodes of

    E-Print Network [OSTI]

    Rogers, John A.

    be difficult to achieve with conventional inorganic materials and processing technologies. Progress associated with chemical incom- patibilities that commonly arise in solution-processed multi- layer plastic. The devices use flexible poly(ethylene terephthalate) (PET; 175 lm thick) substrates, indium tin oxide (ITO

  5. www.afm-journal.de 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim3454

    E-Print Network [OSTI]

    Gilchrist, James F.

    . Introduction Light extraction in organic light emitting diodes (OLEDs) has been an active area of research because of significant power loss due to light waveguiding in the indium tin oxide (ITO)/organic layers be outcoupled by attaching a commercial microlens array or a light extraction film on the back of the substrate

  6. Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study by photoelectron spectroscopy

    E-Print Network [OSTI]

    Kim, Sehun

    Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study,10 -biphenyl-4,40 -diamine (NPB)/indium tin oxide (ITO) was estimated 1.32 eV, while that with a thin WO3 layer annealing the WO3 interlayer at 350 °C, the reduction of hole injection barrier height largely disappears

  7. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  8. Formation of metal oxides by cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, S.; Anders, A.; Rubin, M.; Wang, Z.; Raoux, S.; Kong, F.; Brown, I.G.

    1995-03-01

    Metal oxide thin films are of interest for a number of applications. Cathodic arc deposition, an established, industrially applied technique for formation of nitrides (e.g. TiN), can also be used for metal oxide thin film formation. A cathodic arc plasma source with desired cathode material is operated in an oxygen atmosphere, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on ALS components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Tantalum oxide films are of interest for replacing polymer electrolytes. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/AI{sub 2}O{sub 3}/Si as possible basic structures for passive optoelectronic integrated circuits, and Al{sub 2-x}Er{sub x}O{sub 3} thin films with a variable Er concentration which is a potential component layer for the production of active optoelectronic integrated devices such as amplifiers or lasers at a wavelength of 1.53 {mu}m. Aluminum and chromium oxide films have been deposited on a number of substrates to impart improved corrosion resistance at high temperature. Titanium sub-oxides which are electrically conductive and corrosion resistant and stable in a number of aggressive environments have been deposited on various substrates. These sub-oxides are of great interest for use in electrochemical cells.

  9. INTERIM RESULTS FROM A STUDY OF THE IMPACTS OF TIN(II) BASED MERCURY TREATMENT IN A SMALL STREAM ECOSYSTEM: TIMS BRANCH, SAVANNAH RIVER SITE

    SciTech Connect (OSTI)

    Looney, B.; Bryan, L.; Mathews, T.

    2012-03-30

    Mercury (Hg) has been identified as a 'persistent, bioaccumulative and toxic' pollutant with widespread impacts throughout North America and the world (EPA. 1997a, 1997b, 1998a, 1998b, 2000). Although most of the mercury in the environment is inorganic Hg, a small proportion of total Hg is transformed through the actions of aquatic microbes into methylmercury (MeHg). In contrast to virtually all other metals, MeHg biomagnifies or becomes increasingly concentrated as it is transferred through aquatic food chains so that the consumption of mercury contaminated fish is the primary route of this toxin to humans. For this reason, the ambient water quality criterion (AWQC) for mercury is based on a fish tissue endpoint rather than an aqueous Hg concentration, as the tissue concentration (e.g., < 0.3 {mu}g/g fillet) is considered to be a more consistent indicator of exposure and risk (EPA, 2001). Effective mercury remediation at point-source contaminated sites requires an understanding of the nature and magnitude of mercury inputs, and also knowledge of how these inputs must be controlled in order to achieve the desired reduction of mercury contamination in biota necessary for compliance with AWQC targets. One of the challenges to remediation is that mercury body burdens in fish are more closely linked to aqueous MeHg than to inorganic Hg concentrations (Sveinsdottir and Mason 2005), but MeHg production is not easily predicted or controlled. At point-source contaminated sites, mercury methylation is not only affected by the absolute mercury load, but also by the form of mercury loaded. In addition, once MeHg is formed, the hydrology, trophic structure, and water chemistry of a given system affect how it is transformed and transferred through the food chain to fish. Decreasing inorganic Hg concentrations and loading may often therefore be a more achievable remediation goal, but has led to mixed results in terms of responses in fish bioaccumulation. A number of source control measures have resulted in rapid responses in lake or reservoir fisheries (Joslin 1994, Turner and Southworth 1999; Orihel et al., 2007), but examples of similar responses in Hg-contaminated stream ecosystems are less common. Recent work suggests that stream systems may actually be more susceptible to mercury bioaccumulation than lakes, highlighting the need to better understand the ecological drivers of mercury bioaccumulation in stream-dwelling fish (Chasar et al. 2009, Ward et al. 2010). In the present study we examine the response of fish to remedial actions in Tims Branch, a point-source contaminated stream on the Department of Energy's (DOE) Savannah River Site in Aiken, South Carolina. This second order stream received inorganic mercury inputs at its headwaters from the 1950s-2000s which contaminated the water, sediments, and biota downstream. In 2007, an innovative mercury removal system using tin (II) chloride (stannous chloride, SnCl{sub 2}) was implemented at a pre-existing air stripper. Tin(II) reduces dissolved Hg (II) to Hg (0), which is removed by the air stripper. During this process, tin(II) is oxidized to tin (IV) which is expected to precipitate as colloidal tin(IV) oxides and hydroxides, particulate materials with relatively low toxicity (Hallas and Cooney, 1981, EPA 2002, ATSDR, 2005). The objectives of the present research are to provide an initial assessment of the net impacts of the tin(II) based mercury treatment on key biota and to document the distribution and fate of inorganic tin in this small stream ecosystem after the first several years of operating a full scale system. To support these objectives, we collected fish, sediment, water, invertebrates, and biofilm samples from Tims Branch to quantify the general behavior and accumulation patterns for mercury and tin in the ecosystem and to determine if the treatment process has resulted in: (1) a measurable beneficial impact on (i.e., decrease of) mercury concentration in upper trophic level fish and other biota; this is a key environmental endpoint since reducing mercury concen

  10. Microstructure development in Nb3Sn(Ti) internal tin superconducting wire

    E-Print Network [OSTI]

    Elliott, James

    drawing, increase Nb3Sn layer growth rate and improve Jc at high magnetic fields [4, 5]. In the wires have studied the phase formation sequences in a Nb3Sn `internal tin' process superconductor. Heat and Nb3Sn. Specimens were quenched at different points of the heat treatment, followed by metallography

  11. Naked Clusters of 56 Tin Atoms in the Solid State Svilen Bobev and Slavi C. Sevov*

    E-Print Network [OSTI]

    Naked Clusters of 56 Tin Atoms in the Solid State Svilen Bobev and Slavi C. Sevov* Contribution naked cluster in the solid state besides the fullerenes. Also occurring in the structure are two other discovered main group naked clusters in the solid state has grown immensely in recent years. Many large

  12. DFTand k.p modellingof the phase transitions of lead and tin halideperovskites for photovoltaic cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    DFTand k.p modellingof the phase transitions of lead and tin halideperovskites for photovoltaic Rennes, UMR 6226, 35042 Rennes, France KeywordsPerovskite, photovoltaic, first-principles calculations, k these hybrid semiconductor photovoltaic cells(HSPC) maydiffer from the one of dye-sensitized solar cells (DSSC

  13. SnO2 Filled Mesoporous Tin Phosphate High Capacity Negative Electrode for Lithium Secondary Battery

    E-Print Network [OSTI]

    Cho, Jaephil

    SnO2 Filled Mesoporous Tin Phosphate High Capacity Negative Electrode for Lithium Secondary Battery insulators, and optics.1-6 On the other hand, their applications to electrode materials in lithium secondary batteries have received little attention because of the very limited candidates.7,8 Recently

  14. Alternating layers of plutonium and lead or indium as surrogate for plutonium

    SciTech Connect (OSTI)

    Rudin, Sven Peter

    2009-01-01

    Elemental plutonium (Pu) assumes more crystal structures than other elements, plausibly due to bonding f electrons becoming non-bonding. Complex geometries hamper understanding of the transition in Pu, but calculations predict this transition in a system with simpler geometry: alternating layers either of plutonium and lead or of plutonium and indium. Here the transition occurs via a pairing-up of atoms within Pu layers. Calculations stepping through this pairing-up reveal valuable details of the transition, for example that the transition from bonding to non-bonding proceeds smoothly.

  15. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V. (Troitsk, RU); Zhuikov, Boris L. (Troitsk, RU); Srivastava, Suresh C. (Setauket, NY); Ermolaev, Stanislav V. (Obninsk, RU); Togaeva, Natalia R. (Obninsk, RU)

    2012-01-17

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  16. Absolute orientation-dependent TiN(001) step energies from two-dimensional equilibrium island shape and

    E-Print Network [OSTI]

    Khare, Sanjay V.

    ; Adatoms B1 NaCl-structure TiN is widely used for de- positing hard wear-resistant coatings on cutting tools, diffusion-barrier layers in microelectronic devices, corrosion-resistant coatings on mechani- cal

  17. Absolute orientation-dependent anisotropic TiN,,111... island step energies and stiffnesses from shape fluctuation analyses

    E-Print Network [OSTI]

    Khare, Sanjay V.

    . INTRODUCTION NaCl-structure TiN is widely used as a hard wear-resistant coating on cutting tools, as a diffusion-barrier layer in micro- electronic devices, as a corrosion-resistant coating on me- chanical

  18. Sputtered Molybdenum Bilayer Back Contact for Copper Indium Diselenide-Based Polycrystalline Thin-Film Solar Cells

    E-Print Network [OSTI]

    Scofield, John H.

    -of-the-art polycrystalline copper indium gallium diselenide solar cells with good results. Thin Solid Films, 260 (1), pp. 26), have emerged as promising polycrystalline thin-film semiconductors for solar cell absorber layers.2 polycrystalline thin-film photovoltaic (PV) technology. 3 Solar cells fabricated at the National Renewable Energy

  19. TiN coated aluminum electrodes for DC high voltage electron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore »(Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (« less

  20. Electrodeposition of Indium Antimonide Nanowires in Porous Anodic Alumina Asaduzzaman Mohammad1

    E-Print Network [OSTI]

    Chen, Yong P.

    uses a reverse anodization technique to penetrate the hemispherical pore bottom barrier oxide layer to break through the pore bottom barrier oxide layer including chemical or plasma etching processes [5, 9

  1. Effect of variation in indium concentration on the photosensitivity of chlorine doped In{sub 2}S{sub 3} thin films

    SciTech Connect (OSTI)

    Cherian, Angel Susan; Kartha, C. Sudha; Vijayakumar, K. P. [Department of Physics, Cochin University of Science and Technology, Kochi 682022 (India)

    2014-01-28

    Consequence of variation in Indium concentration in chlorine doped In2S{sub 3} thin films deposited by spray pyrolysis technique was studied. Chlorine was incorporated in the spray solution, using HCl and Indium concentration was varied by adjusting In/S ratio Interestingly, the photo response of all chlorine doped samples augmented compared to pristine samples; but the highest photosensitivity value of ?2300 was obtained only when 36ml 0.5M HCl was added to the solution of In{sub 2}S{sub 3} having In/S=2/8. It was also observed that samples with high photosensitivity possess higher band gap and variation in sub band gap absoption levels were observed with increase in Indium concentration. The present study proved that concentration of Indium plays an important role in controlling the crystallinity and photosensitivity of chlorine doped samples.

  2. Organic Light Emitting Diodes Using a Ga:ZnO Anode

    SciTech Connect (OSTI)

    Berry, J. J.; Ginley, D. S.; Burrows, Paul E.

    2008-05-12

    We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are then compared. Relative to ITO, the GZO anodes have slightly better sheet resistance and transparency in the visible spectral region. Device data suggest GZO results in more effective hole injection into an aromatic triamine hole transporting layer. Indium free anodes are expected toimprove OLED stability while lowering the cost per unit area, crucial for OLED based lighting applications.

  3. 9. M. Sawamura, H. Iikura, E. Nakamura, J. Am. Chem. Soc. 118, 12850 (1996).

    E-Print Network [OSTI]

    Wang, Zhong L.

    1996-01-01

    . Binary semiconducting oxides, such as ZnO, SnO2, In2O3, and CdO, have distinctive proper- ties, fluorine-doped SnO2 film is widely used in architectural glass applications because of its low emissivity (2). Tin-doped indium oxide (In2O3:Sn, ITO) film is an ideal material for flat panel displays because

  4. Co-Percolating Graphene-Wrapped Silver Nanowire Network for High Performance, Highly Stable, Transparent Conducting Electrodes

    SciTech Connect (OSTI)

    Chen, Ruiyi; Das, Suprem R; Jeong, Changwook; Khan, Mohammad Ryyan; Janes, David B; Alam, Muhammad A

    2013-04-25

    Transparent conducting electrodes (TCEs) require high transparency and low sheet resistance for applications in photovoltaics, photodetectors, flat panel displays, touch screen devices, and imagers. Indium tin oxide (ITO), or other transparent conductive oxides, have been used, and provide a baseline sheet resistance (RS) vs. transparency (T) relationship. Several alternative material systems have been investigated. The development of high-performance hybrid structures provides a route towards robust, scalable and low-cost approaches for realizing high-performance TCE.

  5. LABORATORY REPORT ON THE REDUCTION AND STABILIZATION (IMMOBILIZATION) OF PERTECHNETATE TO TECHNETIUM DIOXIDE USING TIN(II)APATITE

    SciTech Connect (OSTI)

    DUNCAN JB; HAGERTY K; MOORE WP; RHODES RN; JOHNSON JM; MOORE RC

    2012-06-01

    This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-105 simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mo bile +7 state under acidic or oxygenated conditions within the tested period oftime (6 weeks). Previous work (RPP-RPT-39195, Assessment of Technetium Leachability in Cement-Stabilized Basin 43 Groundwater Brine) indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table A shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit. The loaded sample (200 mg of Sn(II)apatite loaded with O.311 mg of Tc-99) was subjected to different molarities of nitric acid to determine if the Sn(II)apatite would release the sequestered technetium. The acid was allowed to contact for 1 minute with gentle shaking ('1st wash'); the aqueous solution was then filtered, and the filtrate was analyzed for Tc-99. Table B shows the results ofthe nitric acid exposure. Another portion of acid was added, shaken for a minute, and filtered ('2nd wash'). The technetium-loaded Sn(II)apatite was also subjected to water leach tests. The loaded sample (0.2 g of Sn(II)apatite was loaded with 0.342 mg of Tc-99) was placed in a 200-mL distilled water column and sparged with air. Samples were taken weekly over a 6-week period, and the dissolved oxygen ranged from 8.4 to 8.7 mg/L (average 8.5 mg/L); all samples recorded less than the detection limit of 0.01 mg/L Tc-99. The mechanism by which TcO{sub 2} is sequestered and hence protected from re-oxidation appears to be an exchange with phosphate in the apatite lattice, as the phosphorus that appeared in solution after reaction with technetium was essentially the same moles of technetium that were taken up by the Sn(II)apatite (Table 6). Overall, the reduction of the mobile pertechnetate (+7) to the less mobile technetium dioxide (+4) by Sn(II)apatite and subsequent sequestration of the technetium in the material indicates that Sn(II)apatite is an excellent candidate for long-term immobilization of technetium. The indications are that the Sn(II)apatite will lend itself to sequestering and inhibiting the reoxidation to the mobile pertechnetate species, thus keeping the radionuclide out of the environment.

  6. Oxidation catalyst

    DOE Patents [OSTI]

    Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

    2010-11-09

    The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

  7. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  8. TiN coated aluminum electrodes for DC high voltage electron guns

    SciTech Connect (OSTI)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-15

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached ?225?kV bias voltage while generating less than 100?pA of field emission (<10?pA) using a 40?mm cathode/anode gap, corresponding to field strength of 13.7?MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ?22.5 MV/m with field emission less than 100?pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  9. TiN coated aluminum electrodes for DC high voltage electron guns

    SciTech Connect (OSTI)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  10. I HC HAWAI`I TI MNOA THNG TIN CHO SINH VIN QUC T

    E-Print Network [OSTI]

    bang Hawai`i, Hoa K NM THÀNH LP: 1907 KIM NH CHT LNG: Hip Hi các trng Ph thông và i hc Min Tây Hoa K DIN TÍCH: 1,3 km2 S LNG SINH VIÊN NHP HC: 20.006 S LNG SINH VIÊN QUC T: 2.351 QUY MÔ LP HC: 21 sinh viên T L SINH VIÊN/GING VIÊN: 14/1 S LNG GING VIÊN TRÌNH TIN S: 85% CHNG TRÌNH ÀO TO H C NHÂN*: 112

  11. Tin City Long Range Radar Station Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThin Film Solar Technologies JumpTiSol JumpOffshoreOpen EnergyTin

  12. Growth of single-crystalline rutile TiO2 nanorods on fluorine-doped tin oxide glass for organicinorganic

    E-Print Network [OSTI]

    Cao, Guozhong

    ]. However, the full potential of the organic­ inorganic hybrid solar cells has been suppressed so far­inorganic hybrid solar cells Junting Xi · Orawan Wiranwetchayan · Qifeng Zhang · Zhiqiang Liang · Yueming Sun controlled by growth conditions. When used in hybrid solar cells, TiO2 NRs function as the continuous pathway

  13. Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

    SciTech Connect (OSTI)

    Murali, K.V., E-mail: kvmuralikv@gmail.com [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Ragina, A.J. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Preetha, K.C. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Sree Narayana College, Kannur, Kerala 670007 (India); Deepa, K.; Remadevi, T.L. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Pazhassi Raja N.S.S. College, Mattannur, Kerala 670702 (India)

    2013-09-01

    Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup ?1} ? cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

  14. X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

    SciTech Connect (OSTI)

    Mannie, Gilbere J. A.; Gerritsen, Gijsbert; Abbenhuis, Hendrikus C. L.; Deelen, Joop van; Niemantsverdriet, J. W.; Thuene, Peter C. [Materials innovation institute (M2i), P. O. Box 5008, 2600 GA Delft (Netherlands) and Physical Chemistry of Surfaces, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (Netherlands); Hybrid Catalysis BV, P. O. Box 513, 5600 MB Eindhoven (Netherlands); TNO Science and Industry, P. O. Box 6235, 5600 HE Eindhoven (Netherlands); Physical Chemistry of Surfaces, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (Netherlands)

    2013-01-15

    The chemistry of atmospheric pressure chemical vapor deposition (APCVD) processes is believed to be complex, and detailed reports on reaction mechanisms are scarce. Here, the authors investigated the reaction mechanism of monobutyl tinchloride (MBTC) and water during SnO{sub 2} thin film growth using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). XPS results indicate an acid-base hydrolysis reaction mechanism, which is tested with multilayer experiments, demonstrating self-terminating growth. In-house developed TEM wafers are used to visualize nucleation during these multilayer experiments, and results are compared with TEM results of APCVD samples. Results show almost identical nucleation behavior implying that their growth mechanism is identical. Our experiments suggest that in APCVD, when using MBTC and water, SnO{sub 2} film growth occurs via a heterolytic bond splitting of the Sn-Cl bonds without the need to invoke gas-phase radical or coordination chemistry of the MBTC precursor.

  15. The influence of ammonia on rapid-ther al low-pressure metalorganic chemical vapor deposited TIN, films from tetrakis (dimethylamido) titanium

    E-Print Network [OSTI]

    Florida, University of

    The influence of ammonia on rapid-ther al low-pressure metalorganic chemical vapor deposited TIN, and stress of rapid- thermal low pressure metalorganic chemical vapor deposited (RT-LPMOCVD) TiN, films on In) liquid precursors, were studied. Enhanced deposition rates of l-3 nm s- ' at total chamber pressures

  16. Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray

    E-Print Network [OSTI]

    Fadley, Charles

    N, it is used as a protective coating on metals, including tools used for surgery and vari- ous high speed cutting applications. For instance, TiN coat- ings with thicknesses of about 2­10 lm are generally found to increase tool life by several hundred per cent.1 TiN also has important applications in the semiconduc- tor

  17. ISHHC XIII International Symposium on the Relations between Homogeneous and Heterogeneous Catalysis

    E-Print Network [OSTI]

    Somorjai Ed., G.A.

    2007-01-01

    cuni.cz Palladium doped tin oxide powder exhibitspowder catalysts were prepared by impregnating nanostructural tin oxide particles with palladium

  18. Proton elastic scattering from tin isotopes at 295 MeV and systematic change of neutron density distributions

    E-Print Network [OSTI]

    S. Terashima; H. Sakaguchi; H. Takeda; T. Ishikawa; M. Itoh; T. Kawabata; T. Murakami; M. Uchida; Y. Yasuda; M. Yosoi; J. Zenihiro; H. P. Yoshida; T. Noro; T. Ishida; S. Asaji; T. Yonemura

    2008-02-02

    Cross sections and analyzing powers for proton elastic scattering from $^{116,118,120,122,124}$Sn at 295 MeV have been measured for a momentum transfer of up to about 3.5 fm$^{-1}$ to deduce systematic changes of the neutron density distribution. We tuned the relativistic Love-Franey interaction to explain the proton elastic scattering of a nucleus whose density distribution is well known. Then, we applied this interaction to deduce the neutron density distributions of tin isotopes. The result of our analysis shows the clear systematic behavior of a gradual increase in the neutron skin thickness of tin isotopes with mass number.

  19. Temperature measurements of partially-melted tin as a function of shock pressure

    SciTech Connect (OSTI)

    Seifter, Achim; Furlanetto, Michael R; Holtkamp, David B; Obst, Andrew W; Payton, J R; Stone, J B; Tabaka, L J; Grover, M; Macrum, G; Stevens, G D; Swift, D C; Turley, W D; Veeser, L R

    2009-01-01

    Equilibrium equation of state theory predicts that the free surface release temperature of shock loaded tin will show a plateau of 505 K in the pressure range from 19.5 to 33.0 GPa, corresponding to the solid-liquid mixed-phase region. In this paper we report free surface temperature measurements on shock-loaded tin from 15 to 31 GPa using multi-wavelength optical pyrometry. The shock waves were generated by direct contact of detonating high explosive with the sample. The pressure in the sample was determined by free surface velocity measurements using Photon Doppler Velocimetry. The emitted thermal radiance was measured at four wavelength bands in the near IR region from 1.5 to 5.0 {micro}m. The samples in most of the experiments had diamond-turned surface finishes, with a few samples being polished or ball rolled. At pressures higher than 25 GPa the measured free surface temperatures were higher than the predicted 505 K and increased with increasing pressure. This deviation could be explained by hot spots and/or variations in surface emissivity and requires a further investigation.

  20. Metallography and microstructure interpretation of some archaeological tin bronze vessels from Iran

    SciTech Connect (OSTI)

    Oudbashi, Omid; Davami, Parviz

    2014-11-15

    Archaeological excavations in western Iran have recently revealed a significant Luristan Bronzes collection from Sangtarashan archaeological site. The site and its bronze collection are dated to Iron Age II/III of western Iran (10th–7th century BC) according to archaeological research. Alloy composition, microstructure and manufacturing technique of some sheet metal vessels are determined to reveal metallurgical processes in western Iran in the first millennium BC. Experimental analyses were carried out using Scanning Electron Microscopy–Energy Dispersive X-ray Spectroscopy and Optical Microscopy/Metallography methods. The results allowed reconstructing the manufacturing process of bronze vessels in Luristan. It proved that the samples have been manufactured with a binary copper–tin alloy with a variable tin content that may relates to the application of an uncontrolled procedure to make bronze alloy (e.g. co-smelting or cementation). The presence of elongated copper sulphide inclusions showed probable use of copper sulphide ores for metal production and smelting. Based on metallographic studies, a cycle of cold working and annealing was used to shape the bronze vessels. - Highlights: • Sangtarashan vessels are made by variable Cu-Sn alloys with some impurities. • Various compositions occurred due to applying uncontrolled smelting methods. • The microstructure represents thermo-mechanical process to shape bronze vessels. • In one case, the annealing didn’t remove the eutectoid remaining from casting. • The characteristics of the bronzes are similar to other Iron Age Luristan Bronzes.

  1. The UniversiTy of Texas aT aUsTin Application for Tuition Rebate

    E-Print Network [OSTI]

    Pillow, Jonathan

    The UniversiTy of Texas aT aUsTin Application for Tuition Rebate Name) _________ / _________ General Information An undergraduate may be eligible for a tuition rebate of up to $1,000 at graduation documentation, you may submit an application for a rebate. If you answered yes to question 3a., you

  2. Hugoniot Measurements at Low Pressures in Tin Using 800 MeV proton Radiography

    SciTech Connect (OSTI)

    Schwartz, Cynthia; Hogan, Gary E; King, Nicholas S. P.; Kwiathowski, Kris K.; Mariam, Fesseha G.; Marr-Lyon, Mark; McNeil, Wendy Vogan; Merrill, Frank E.; Morris, Christopher; Rightley, Paul; Saunders, Alexander

    2009-08-05

    A 2cm long 8 mm diameter cylindrical tin target has been shocked to a pressure in the region of the {beta} {yields} {gamma} phase change using a small, low density PETN charge mounted on the opposite side of a stainless steel diaphragm. The density jump and shock velocity were measured radiographically as the shock wave moved through the sample and the pressure dropped, using the proton radiography facility at LANL. This provided a quasi-continuous record of the equations of state along the Hugoniot for the P1 wave from a shock velocity of 3.25 km/sec down to near the sound speed. Edge release effects were removed from the data using tomographic techniques. The data show evidence for a phase transition that extends over a broad pressure range. The data and analysis will be presented.

  3. HUGONIOT MEASUREMENTS AT LOW PRESSURES IN TIN USING 800 MeV PROTON RADIOGRAPHY

    SciTech Connect (OSTI)

    Schwartz, C. L.; Hogan, G. E.; King, N. S. P.; Kwiatkowski, K.; Mariam, F. G.; Merrill, F. E.; Morris, C. L.; Saunders, A.; Marr-Lyon, M.; Rightley, P. M.; McNeil, W. V.

    2009-12-28

    A 20 mm long 8 mm diameter cylindrical tin target has been shocked to a pressure just below the beta->gamma phase change, using a small, low density PETN charge mounted on the opposite side of a thin stainless steel diaphragm. The density jump and shock velocity were measured radiographically at multiple points as the shock wave moved though the sample and the pressure dropped, using the proton radiography facility at LANL. This provided a quasi-continuous record along the principal Hugoniot from a peak shock velocity of 3.27 km/sec to a minimum of 3.09 km/sec. Edge release effects were removed from the data using simple tomographic reconstruction techniques. The data and analysis are presented.

  4. Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY); Mausner, Leonard F. (Stony Brook, NY); Atkins, Harold L. (Setauket, NY)

    1998-12-29

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients.

  5. Method for palliation of pain in human bone cancer using therapeutic tin-117m compositions

    DOE Patents [OSTI]

    Srivastava, S.C.; Meinken, G.E.; Mausner, L.F.; Atkins, H.L.

    1998-12-29

    The invention provides a method for the palliation of bone pain due to cancer by the administration of a unique dosage of a tin-117m (Sn-117m) stannic chelate complex in a pharmaceutically acceptable composition. In addition, the invention provides a method for simultaneous palliation of bone pain and radiotherapy in cancer patients using compositions containing Sn-117m chelates. The invention also provides a method for palliating bone pain in cancer patients using Sn-117m-containing compositions and monitoring patient status by imaging the distribution of the Sn-117m in the patients. Also provided are pharmaceutically acceptable compositions containing Sn-117m chelate complexes for the palliation of bone pain in cancer patients. 5 figs.

  6. Effect of Thermal Annealing in Ammonia on the Properties of InGaN Nanowires with Different Indium Concentrations

    SciTech Connect (OSTI)

    Hahn, Cristopher; Cordones, Amy; Andrews, Sean; Gao, Hanwei; Fu, Anthony; Leone, Stephen; Yang, Peidong

    2012-10-02

    The utility of an annealing procedure in ammonia ambient is investigated for improving the optical characteristics of InxGa1?xN nanowires (0.07 ? x ? 0.42) grown on c-Al2O3 using a halide chemical vapor deposition method. Morphological studies using scanning electron microscopy confirm that the nanowire morphology is retained after annealing in ammonia at temperatures up to 800 ?C. However, significant indium etching and composition inhomogeneities are observed for higher indium composition nanowires (x = 0.28, 0.42), as measured by energy-dispersive X-ray spectroscopy and Z-contrast scanning transmission electron microscopy. Structural analyses, using X-ray diffraction and high-resolution transmission electron microscopy, indicate that this is a result of the greater thermal instability of higher indium composition nanowires. The effect of these structural changes on the optical quality of InGaN nanowires is examined using steady-state and time-resolved photoluminescence measurements. Annealing in ammonia enhances the integrated photoluminescence intensity of InxGa1?xN nanowires by up to a factor of 4.11 ? 0.03 (for x = 0.42) by increasing the rate of radiative recombination. Fitting of photoluminescence decay curves to a Kohlrausch stretched exponential indicates that this increase is directly related to a larger distribution of recombination rates from composition inhomogeneities caused by annealing. The results demonstrate the role of thermal instability on the improved optical properties of InGaN nanowires annealed in ammonia.

  7. Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

    SciTech Connect (OSTI)

    Leppäniemi, J. Ojanperä, K.; Kololuoma, T.; Huttunen, O.-H.; Majumdar, H.; Alastalo, A.; Dahl, J.; Tuominen, M.; Laukkanen, P.

    2014-09-15

    We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In{sub 2}O{sub 3}) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100?°C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250?°C with FUV for 5?min yield enhancement-mode TFTs with saturation mobility of ?1?cm{sup 2}/(V·s). Amorphous In{sub 2}O{sub 3} films annealed for 15?min with FUV at temperatures of 180?°C and 200?°C yield TFTs with low-hysteresis and saturation mobility of 3.2?cm{sup 2}/(V·s) and 7.5?cm{sup 2}/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160?nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.

  8. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect (OSTI)

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  9. Method for producing nanostructured metal-oxides

    DOE Patents [OSTI]

    Tillotson, Thomas M.; Simpson, Randall L.; Hrubesh, Lawrence W.; Gash, Alexander

    2006-01-17

    A synthetic route for producing nanostructure metal-oxide-based materials using sol-gel processing. This procedure employs the use of stable and inexpensive hydrated-metal inorganic salts and environmentally friendly solvents such as water and ethanol. The synthesis involves the dissolution of the metal salt in a solvent followed by the addition of a proton scavenger, which induces gel formation in a timely manner. Both critical point (supercritical extraction) and atmospheric (low temperature evaporation) drying may be employed to produce monolithic aerogels and xerogels, respectively. Using this method synthesis of metal-oxide nanostructured materials have been carried out using inorganic salts, such as of Fe.sup.3+, Cr.sup.3+, Al.sup.3+, Ga.sup.3+, In.sup.3+, Hf.sup.4+, Sn.sup.4+, Zr.sup.4+, Nb.sup.5+, W.sup.6+, Pr.sup.3+, Er.sup.3+, Nd.sup.3+, Ce.sup.3+, U.sup.3+ and Y.sup.3+. The process is general and nanostructured metal-oxides from the following elements of the periodic table can be made: Groups 2 through 13, part of Group 14 (germanium, tin, lead), part of Group 15 (antimony, bismuth), part of Group 16 (polonium), and the lanthanides and actinides. The sol-gel processing allows for the addition of insoluble materials (e.g., metals or polymers) to the viscous sol, just before gelation, to produce a uniformly distributed nanocomposites upon gelation. As an example, energetic nanocomposites of Fe.sub.xO.sub.y gel with distributed Al metal are readily made. The compositions are stable, safe, and can be readily ignited to thermitic reaction.

  10. Journal of Materials Research http://journals.cambridge.org/JMR

    E-Print Network [OSTI]

    Schleife, André

    into the far UV. The gaps can be modified, e.g., not only by alloying ZnO with MgO or cadmium oxide (CdO) (see to SnO.4 Free carriers, introduced by intentional as well as unintentional doping, are the reason for the remark- able conductivities of the TCOs.5 Prominent examples are aluminum-doped ZnO,6 tin-doped indium

  11. Disorder-free sputtering method on graphene

    SciTech Connect (OSTI)

    Qiu Xue Peng; Shin Young Jun; Niu Jing; Kulothungasagaran, Narayanapillai; Kalon, Gopinadhan; Yang, Hyunsoo; Qiu Caiyu; Yu Ting

    2012-09-15

    Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

  12. Radial electron collection in dye-sensitized solar cells.

    SciTech Connect (OSTI)

    Martinson, A. B. B.; Elam, J. W.; Liu, J.; Pellin, M. J.; Marks, T. J.; Hupp, J. T.; Materials Science Division; Northwestern Univ.

    2008-01-01

    We introduce a new photoelectrode architecture consisting of concentric conducting and semiconducting nanotubes for use in dye-sensitized solar cells (DSSCs). Atomic layer deposition is employed to grow indium tin oxide (ITO) within a porous template and subsequently coat the high area photoelectrode with amorphous TiO2. Compared with control devices lacking a current collector within the pores, the new photoelectrode geometry exhibits dramatically higher current densities, an effect attributed to the radial collection of electrons.

  13. Annealing for intrinsic point-defect control and enhanced solar cell performance : the case of H?S and tin sulfide (SnS)

    E-Print Network [OSTI]

    Hartman, Katherine, Ph. D. Massachusetts Institute of Technology

    2015-01-01

    This thesis explores the possibility of tin monosulfide (SnS) as a new and promising solar cell absorber material. Out of many other Earth-abundant binary semiconductors, it was selected for study because it has a strong ...

  14. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    DOE Patents [OSTI]

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  15. In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells

    SciTech Connect (OSTI)

    Sowinska, Malgorzata Bertaud, Thomas; Walczyk, Damian; Calka, Pauline; Walczyk, Christian; Thiess, Sebastian; Alff, Lambert; Schroeder, Thomas

    2014-05-28

    In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

  16. Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

    SciTech Connect (OSTI)

    Shin, Hyungjoo; Zhu Weiye; Liu Lei; Sridhar, Shyam; Donnelly, Vincent M.; Economou, Demetre J. [Plasma Processing Laboratory, Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204-4004 (United States); Lenox, Chet; Lii, Tom [Texas Instruments Inc., Dallas, Texas 75243 (United States)

    2013-05-15

    Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaN etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.

  17. Photo-oxidation catalysts

    DOE Patents [OSTI]

    Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

    2009-07-14

    Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

  18. Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin

    SciTech Connect (OSTI)

    Bogart, Timothy D.; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2014-10-30

    Silicon (Si) has a very high lithium storage capacity and is being explored as a negative electrode material in lithium-ion batteries (LIBs). Si nanowires can exhibit relatively stable performance for many cycles of charging; however, conductive carbon must often be added to the electrode layer to improve the rate capability due to the relatively low electrical conductivity of Si. The added carbon lowers the capacity of the electrode. Here, we show that the rate capability of Si in LIBs can be substantially enhanced by incorporating tin (Sn) into Si nanowires. The solubility of Sn in Si is very low (0.015 at%); yet, Sn used as a seed for supercritical fluid–liquid–solid (SFLS) growth can be trapped in Si nanowires with relatively high concentration (10 at%). Such Sn-containing Si nanowires and no added conductive carbon in the electrode layer, could be cycled in LIBs with high capacity (*1000 mA h g*1 over 100 cycles) at a current density of 2.8 A g*1 (1 C). Capacities exceeding that of graphite could still be reached at cycle rates as high as 2 C. Real-time in situ transmission electron microscopy (TEM) revealed that lithiation occurs five times faster in Si nanowires with significant amounts of Sn than in the Si nanowires without Sn, and twice as fast as in nanowires that were coated with carbon.

  19. Investigation into the semimagic nature of the tin isotopes through electromagnetic moments

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Allmond, J. M.; Stuchbery, A. E.; Galindo-Uribarri, A.; Padilla-Rodal, E.; Radford, D. C.; Batchelder, J. C.; Bingham, C. R.; Howard, M. E.; Liang, J. F.; Manning, B.; et al

    2015-10-19

    A complete set of electromagnetic moments, B(E2;0+1 2+1), Q(2+1), and g(2+1), have been measured from Coulomb excitation of semi-magic 112,114,116,118,120,122,124Sn (Z = 50) on natural carbon and titanium targets. The magnitude of the B(E2) values, measured to a precision of ~4%, disagree with a recent lifetime study [Phys. Lett. B 695, 110 (2011)] that employed the Doppler- shift attenuation method. The B(E2) values show an overall enhancement compared with recent theoretical calculations and a clear asymmetry about midshell, contrary to naive expectations. A new static electric quadrupole moment, Q(2+1), has been measured for 114Sn. The static quadrupole moments are generallymore »consistent with zero but reveal an enhancement near midshell; this had not been previously observed. The magnetic dipole moments are consistent with previous measurements and show a near monotonic decrease in value with neutron number. The current theory calculations fail to reproduce the electromagnetic moments of the tin isotopes. The role of 2p-2h and 4p-4h intruders, which are lowest in energy at mid shell and outside of current model spaces, needs to be investigated in the future.« less

  20. Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons

    SciTech Connect (OSTI)

    Vandenberghe, William G. Fischetti, Massimo V.

    2014-11-07

    Monolayers of tin (stannanane) functionalized with halogens have been shown to be topological insulators. Using density functional theory (DFT), we study the electronic properties and room-temperature transport of nanoribbons of iodine-functionalized stannanane showing that the overlap integral between the wavefunctions associated to edge-states at opposite ends of the ribbons decreases with increasing width of the ribbons. Obtaining the phonon spectra and the deformation potentials also from DFT, we calculate the conductivity of the ribbons using the Kubo-Greenwood formalism and show that their mobility is limited by inter-edge phonon backscattering. We show that wide stannanane ribbons have a mobility exceeding 10{sup 6} cm{sup 2}/Vs. Contrary to ordinary semiconductors, two-dimensional topological insulators exhibit a high conductivity at low charge density, decreasing with increasing carrier density. Furthermore, the conductivity of iodine-functionalized stannanane ribbons can be modulated over a range of three orders of magnitude, thus rendering this material extremely interesting for classical computing applications.

  1. Reducing the In2O3(111) Surface Results in Ordered Indium Adatoms

    SciTech Connect (OSTI)

    Wagner, Margareta; Seiler, Steffen; Meyer, Bernd; Boatner, Lynn A; Schmid, M.; Diebold, U.

    2014-01-01

    The In2O3(111) surface can be transformed from an oxidized bulk termination to one that is covered by single In adatoms. As each adatom sits at one specific site within the surface unit cell they form a well-ordered (1 1) superstructure. Annealing at 500 C in O2 or in ultrahigh vacuum results in a fully reversible conversion between these two surface terminations; this transformation and intermediate stages were followed with Scanning Tunneling Microscopy (STM). Formation of this novel surface structure under reducing conditions is corroborated by Density Functional Theory (DFT). The reduced adatom-covered and the oxidized In2O3(111) surfaces are expected to exhibit different chemical and electronic properties, which can easily be exploited by the facile and reversible switching between the two terminations.

  2. Phase Discrimination through Oxidant Selection for Iron Oxide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Phase Discrimination through Oxidant Selection for Iron Oxide Ultrathin Films Home > Research > ANSER Research Highlights > Phase Discrimination through Oxidant Selection for Iron...

  3. Cerium Oxide Coating for Oxidation Reduction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Award In order to produce power more efficiently and cleanly, the next generation of power plant boilers, turbines, solid oxide fuel cells (SOFCs) and other essential equipment...

  4. Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating

    DOE Patents [OSTI]

    Howard, Stanley R. (Windsor, SC); Korinko, Paul S. (Aiken, SC)

    2008-05-27

    A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

  5. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

    2006-04-04

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  6. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

    2004-07-13

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  7. Band gap narrowing in zinc oxide-based semiconductor thin films...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  8. Groundwater Quality and Groundwater Pollution

    E-Print Network [OSTI]

    Pasternack, Gregory B.

    bromide gallium magnesium strontium cadmium gold chromium indium cobalt lanthanum anions phosphate tin rubidium tungsten selenium ytterbium titanium yttrium uranium zirconium vanadium zinc #12;are

  9. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect (OSTI)

    Shin, H.; Srivastava, S. N.; Ruzic, D. N. [Center for Plasma Material Interactions, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  10. Tubular Organization of SnO? Nanocrystallites for Improved Lithium Ion Battery Anode Performance

    E-Print Network [OSTI]

    Wang, Yong

    Porous tin oxide nanotubes were obtained by vacuum infiltration of tin oxide nanoparticles into porous aluminum oxide membranes, followed by calcination. The porous tin oxide nanotube arrays so prepared were characterized ...

  11. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    SciTech Connect (OSTI)

    Ha, Tae-Jun

    2014-10-15

    We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (?3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  12. The tin impurity in Bi0.5Sb1.5Te3 alloys | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCEDInstallers/ContractorsPhotovoltaicsState ofSavings for Specific Measures 5 U.S. C. § 552.The tin

  13. Methane oxidation rates by AMS

    E-Print Network [OSTI]

    Pack, M; Heintz, M; ReeburGh, WS; Trumbore, SE; Valentine, DL; Xu, X

    2009-01-01

    second case. Number of cases Methane oxidation rates by AMSIn the marine environment methane (CH 4 ) oxidation consumes

  14. Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

    SciTech Connect (OSTI)

    Liu, Yang Hui; Wan, Qing; Qiang Zhu, Li; Shi, Yi

    2014-03-31

    Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ?5.5?×?10{sup ?3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ?2.0??F/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup ?1} s{sup ?1}, 2.8?×?10{sup 6}, and 130?mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

  15. Tin-117m-labeled stannic (Sn/sup 4 +/) chelate of diethylenetriamine pentaacetic acid (DTPA) for application in diagnosis and therapy

    DOE Patents [OSTI]

    Srivastava, S.C.; Meinken, G.E.; Richards, P.

    1983-08-25

    The radiopharmaceutical reagents of this invention and the class of Tin-117m radiopharmaceuticals are therapeutic and diagnostic agents that incorporate gamma-emitting nuclides that localize in bone after intravenous injection in mammals (mice, rats, dogs, and rabbits). Images reflecting bone structure or function can then be obtained by a scintillation camera that detects the distribution of ionizing radiation emitted by the radioactive agent. Tin-117m-labeled chelates of stannic tin localize almost exclusively in cortical bone. Upon intravenous injection of the reagent, the preferred chelates are phosphonate compounds, preferable, PYP, MDP, EHDP, and DTPA. This class of reagents is therapeutically and diagnostically useful in skeletal scintigraphy and for the radiotherapy of bone tumors and other disorders.

  16. Partial oxidation catalyst

    DOE Patents [OSTI]

    Krumpelt, Michael (Naperville, IL); Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Doshi, Rajiv (Downers Grove, IL)

    2000-01-01

    A two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion. The dehydrogenation portion is a group VIII metal and the oxide-ion conducting portion is selected from a ceramic oxide crystallizing in the fluorite or perovskite structure. There is also disclosed a method of forming a hydrogen rich gas from a source of hydrocarbon fuel in which the hydrocarbon fuel contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion at a temperature not less than about 400.degree. C. for a time sufficient to generate the hydrogen rich gas while maintaining CO content less than about 5 volume percent. There is also disclosed a method of forming partially oxidized hydrocarbons from ethanes in which ethane gas contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion for a time and at a temperature sufficient to form an oxide.

  17. Ternary Pt/Rh/SnO2 Electrocatalysts for Oxidizing Ethanol to CO2

    SciTech Connect (OSTI)

    Kowal, A.; Li, M; Shao, M; Sasaki, K; Vukmirovic, M; Zhang, J; Marinkovic, N; Liu, P; Frenkel, A; Adzic, R

    2009-01-01

    Ethanol, with its high energy density, likely production from renewable sources and ease of storage and transportation, is almost the ideal combustible for fuel cells wherein its chemical energy can be converted directly into electrical energy. However, commercialization of direct ethanol fuel cells has been impeded by ethanol's slow, inefficient oxidation even at the best electrocatalysts1, 2. We synthesized a ternary PtRhSnO2/C electrocatalyst by depositing platinum and rhodium atoms on carbon-supported tin dioxide nanoparticles that is capable of oxidizing ethanol with high efficiency and holds great promise for resolving the impediments to developing practical direct ethanol fuel cells. This electrocatalyst effectively splits the C-C bond in ethanol at room temperature in acid solutions, facilitating its oxidation at low potentials to CO2, which has not been achieved with existing catalysts. Our experiments and density functional theory calculations indicate that the electrocatalyst's activity is due to the specific property of each of its constituents, induced by their interactions. These findings help explain the high activity of Pt-Ru for methanol oxidation and the lack of it for ethanol oxidation, and point to the way to accomplishing the C-C bond splitting in other catalytic processes.

  18. Ternary Pt/Rh/SnO2 Electrocatalysts for Oxidizing Ethanol to CO2

    SciTech Connect (OSTI)

    Adzic, R.R.; Kowal, A.; Li, M.; Shao, M.; Sasaki, K.; Vukmirovic, M.B.; Zhang, J.; Marinkovic, N.S. Liu, P.; Frenkel, A.I.

    2009-04-01

    Ethanol, with its high energy density, likely production from renewable sources and ease of storage and transportation, is almost the ideal combustible for fuel cells wherein its chemical energy can be converted directly into electrical energy. However, commercialization of direct ethanol fuel cells has been impeded by ethanol's slow, inefficient oxidation even at the best electrocatalysts. We synthesized a ternary PtRhSnO{sub 2}/C electrocatalyst by depositing platinum and rhodium atoms on carbon-supported tin dioxide nanoparticles that is capable of oxidizing ethanol with high efficiency and holds great promise for resolving the impediments to developing practical direct ethanol fuel cells. This electrocatalyst effectively splits the C-C bond in ethanol at room temperature in acid solutions, facilitating its oxidation at low potentials to CO{sub 2}, which has not been achieved with existing catalysts. Our experiments and density functional theory calculations indicate that the electrocatalyst's activity is due to the specific property of each of its constituents, induced by their interactions. These findings help explain the high activity of Pt-Ru for methanol oxidation and the lack of it for ethanol oxidation, and point to the way to accomplishing the C-C bond splitting in other catalytic processes.

  19. ?{sup (3)} measurements of axial ligand modified high valent tin(IV) porphyrins using degenarete four wave mixing at 532nm

    SciTech Connect (OSTI)

    Narendran, N. K. Siji, E-mail: sijinarendran@gmail.com; Chandrasekharan, K. [Laser and nonlinear optics laboratory, Department of Physics, National Institute of Technology Calicut, Calicut-673601, Kerala (India); Soman, Rahul; Arunkumar, Chellaiah [Bioinorganic materials laboratory, Department of Chemistry, National Institute of Technology Calicut, Calicut-673601, Kerala (India); Sudheesh, P. [Department of Physics, VTM NSS College, Dhanuvachapuram, Thiruvananthapuram (India)

    2014-10-15

    Porphyrins and metalloporphyrins are unique class of molecules for Nonlinear Optical applications because of their unique structure of altering the central metal atom, large extended ?-system, high thermal stability, tunable shape, symmetry and synthetic versatility Here, we report ?{sup (3)} Measurements of a simple phenyl porphyrins and its highvalent tin(IV) porphyrins with Bromination characterized by UV-Visible spectroscopic method. In this study, we employed the Degenerate Four Wave Mixing technique using forward Boxcar geometry with an Nd:YAG nano second pulsed laser as source and it was found that the tin(IV) porphyrin with Bromination exhibits good ?{sup (3)} value and figure of merit.

  20. ZIRCONIUM OXIDE NANOSTRUCTURES PREPARED BY ANODIC OXIDATION

    SciTech Connect (OSTI)

    Dang, Y. Y.; Bhuiyan, M.S.; Paranthaman, M. P.

    2008-01-01

    Zirconium oxide is an advanced ceramic material highly useful for structural and electrical applications because of its high strength, fracture toughness, chemical and thermal stability, and biocompatibility. If highly-ordered porous zirconium oxide membranes can be successfully formed, this will expand its real-world applications, such as further enhancing solid-oxide fuel cell technology. Recent studies have achieved various morphologies of porous zirconium oxide via anodization, but they have yet to create a porous layer where nanoholes are formed in a highly ordered array. In this study, electrochemical methods were used for zirconium oxide synthesis due to its advantages over other coating techniques, and because the thickness and morphology of the ceramic fi lms can be easily tuned by the electrochemical parameters, such as electrolyte solutions and processing conditions, such as pH, voltage, and duration. The effects of additional steps such as pre-annealing and post-annealing were also examined. Results demonstrate the formation of anodic porous zirconium oxide with diverse morphologies, such as sponge-like layers, porous arrays with nanoholes ranging from 40 to 75 nm, and nanotube layers. X-ray powder diffraction analysis indicates a cubic crystallographic structure in the zirconium oxide. It was noted that increased voltage improved the ability of the membrane to stay adhered to the zirconium substrate, whereas lower voltages caused a propensity for the oxide fi lm to fl ake off. Further studies are needed to defi ne the parameters windows that create these morphologies and to investigate other important characteristics such as ionic conductivity.

  1. Adhesion evaluation of TiN and (Ti, Al)N coatings on titanium 6Al-4V

    SciTech Connect (OSTI)

    James, R.D.; Gruss, K.A.; Horie, Y.; Davis, R.F.; Paisley, D.L.; Parthasarthi, S.; Tittmann, B.R.

    1996-12-31

    The metallic components of gas turbine engines are continually subjected to hostile atmospheres. Nitride coatings improve the performance of the metallic compressor blades in these engines. To assess the adhesion of nitride coatings on metals, titanium 6% aluminum 4% vanadium substrates were coated with titanium nitride (TiN) using both cathodic arc and electron beam evaporation. Titanium aluminum nitride ((Ti, Al)N) was also deposited using cathodic arc evaporation. The interfaces of the coated samples were loaded in tension using a high speed shock wave which caused spallation either at the interface, in the coating or in the metal. Scanning acoustic microscopy analysis of the spalled samples detected delaminations at the interface in the samples deposited by cathodic arc evaporation. DYNA2D modeling of plate impact spallation experiments revealed the tensile adhesion strength for TiN deposited by both techniques was {approx} 2.0 GPa. The tensile adhesion strength for (Ti, Al)N was less than 1.5 GPa.

  2. Oxidation Resistant Graphite Studies

    SciTech Connect (OSTI)

    W. Windes; R. Smith

    2014-07-01

    The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740°C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

  3. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    E-Print Network [OSTI]

    Flewitt, Andrew J.; Powell, M.J.

    2014-01-01

    crystal to organic light emitting diode technology and with requirements for larger areas and higher resolutions. A number of alternative material systems to a-Si:H have emerged, including organic semiconductors,2 nanocrystalline silicon...

  4. Effects of H{sub 2} plasma treatment on the electrical properties of titanium-doped indium oxide films prepared by polymer-assisted deposition

    SciTech Connect (OSTI)

    Hwang, Joo-Sang; Lee, Ji-Myon; Vishwanath, Sujaya Kumar; Kim, Jihoon

    2015-07-15

    The effects of hydrogen (H{sub 2}) plasma on the optical and electrical properties of titanium-doped InO (TIO) grown on glass substrates using polymer-assisted deposition are reported. Samples were exposed to H{sub 2} plasma formed by inductively coupled plasma (ICP). After plasma treatment at a power of 100?W, the sheet resistance of the TIO films decreased from 11?000 to 285??/sq. Additionally, the Hall mobility and sheet carrier concentration of the films increased as the ICP source power was increased to 100?W, without affecting the optical transmittance of the films, due to the removal of the polymer residues and the formation of oxygen vacancies.

  5. Theoretical study of small clusters of indium oxide: InO, In2O; InO2; In2O2 Saikat Mukhopadhyay a

    E-Print Network [OSTI]

    Pandey, Ravi

    ) is being used in devices like liquid crystal display (LCD) plasma, electromagnetic and organic light-emitting diode (OLED) displays. Recently, chro- mium doped In2O3 (e.g. In2Ã?xCrxO3) has been reported as a mag

  6. METAL OXIDE NANOPARTICLES

    SciTech Connect (OSTI)

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  7. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect (OSTI)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  8. Barium oxide, calcium oxide, magnesia, and alkali oxide free glass

    DOE Patents [OSTI]

    Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

    2013-09-24

    A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

  9. Mixed oxide solid solutions

    DOE Patents [OSTI]

    Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

    2003-01-01

    The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

  10. Method and system for the combination of non-thermal plasma and metal/metal oxide doped .gamma.-alumina catalysts for diesel engine exhaust aftertreatment system

    DOE Patents [OSTI]

    Aardahl, Christopher L. (Richland, WA); Balmer-Miller, Mari Lou (West Richland, WA); Chanda, Ashok (Peoria, IL); Habeger, Craig F. (West Richland, WA); Koshkarian, Kent A. (Peoria, IL); Park, Paul W. (Peoria, IL)

    2006-07-25

    The present disclosure pertains to a system and method for treatment of oxygen rich exhaust and more specifically to a method and system that combines non-thermal plasma with a metal doped .gamma.-alumina catalyst. Current catalyst systems for the treatment of oxygen rich exhaust are capable of achieving only approximately 7 to 12% NO.sub.x reduction as a passive system and only 25 40% reduction when a supplemental hydrocarbon reductant is injected into the exhaust stream. It has been found that treatment of an oxygen rich exhaust initially with a non-thermal plasma and followed by subsequent treatment with a metal doped .gamma.-alumina prepared by the sol gel method is capable of increasing the NO.sub.x reduction to a level of approximately 90% in the absence of SO.sub.2 and 80% in the presence of 20 ppm of SO.sub.2. Especially useful metals have been found to be indium, gallium, and tin.

  11. Unfamiliar oxidation states and their stabilization

    E-Print Network [OSTI]

    Kleinberg, Jacob

    1950-01-01

    . Vapor density measurements between 400o and 470o show that some GaCl2 "molecules" are present, but there is no indication of the presence of monochloride.10 Re duction of indium (III) fluoride with hydrogen at an elevated temperature yields.... Vapor density measurements between 400o and 470o show that some GaCl2 "molecules" are present, but there is no indication of the presence of monochloride.10 Re duction of indium (III) fluoride with hydrogen at an elevated temperature yields...

  12. EFFECT OF THERMAL PROCESSES ON COPPER-TIN ALLOYS FOR ZINC GETTERING

    SciTech Connect (OSTI)

    Korinko, P.; Golyski, M.

    2013-11-01

    A contamination mitigation plan was initiated to address the discovery of radioactive zinc‐65 in a glovebox. A near term solution was developed, installation of heated filters in the glovebox piping. This solution is effective at retaining the zinc in the currently contaminated area, but the gamma emitting contaminant is still present in a system designed for tritium beta. A project was initiated to develop a solution to contain the {sup 65}Zn in the furnace module. Copper and bronze (a Cu/Sn alloy) were found to be candidate materials to combine with zinc‐65 vapor, using thermodynamic calculations. A series of binary Cu/Sn alloys were developed (after determining that commercial alloys were unacceptable), that were found to be effective traps of zinc vapor. The task described in this report was undertaken to determine if the bronze substrates would retain their zinc gettering capability after being exposed to simulated extraction conditions with oxidizing and reducing gases. Pure copper and three bronze alloys were prepared, exposed to varying oxidation conditions from 250 to 450{degree}C, then exposed to varying reduction conditions in He-H{sub 2} from 250-450{degree}C, and finally exposed to zinc vapor at 350{degree}C for four hours. The samples were characterized using scanning electron microscopy, X-ray diffraction, differential thermal analysis, mass change, and visual observation. It was observed that the as fabricated samples and the reduced samples all retained their zinc gettering capacity while samples in the "as-oxidized" condition exhibited losses in zinc gettering capacity. Over the range of conditions tested, i.e., composition, oxidation temperature, and reduction temperature, no particular sample composition appeared better. Samples reduced at 350{degree}C exhibited the greatest zinc capacity, although there were some testing anomalies associated with these samples. This work clearly demonstrated that the zinc gettering was not adversely affected by exposure to simulated process conditions and a full scale lithium and zinc trap should be fabricated for testing in the Tritium Extraction Facility.

  13. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  14. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  15. Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide

    E-Print Network [OSTI]

    Kim, Sehun

    Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide catalytic systems.12,13 On the other hand, the reduced graphene oxide (rGO) is functionalized graphene Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO

  16. Electrode with transparent series resistance for uniform switching of optical modulation devices

    DOE Patents [OSTI]

    Tench, D. Morgan (Camarillo, CA); Cunningham, Michael A. (Thousand Oaks, CA); Kobrin, Paul H. (Newbury Park, CA)

    2008-01-08

    Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

  17. Determining the nonparabolicity factor of the CdO conduction band using indium doping and the Drude theory

    E-Print Network [OSTI]

    Mendelsberg, Rueben

    2014-01-01

    conducting oxides. ga- and in-doped cdo thin films grown bycharacterization of aluminum-doped cdo thin films by sol-geland transparent ti-doped cdo films by pulsed laser

  18. SU-E-T-557: Measuring Neutron Activation of Cardiac Devices Irradiated During Proton Therapy Using Indium Foils

    SciTech Connect (OSTI)

    Avery, S; Christodouleas, J; Delaney, K; Diffenderfer, E; Brown, K

    2014-06-01

    Purpose: Measuring Neutron Activation of Cardiac devices Irradiated during Proton Therapy using Indium Foils Methods: The foils had dimensions of 25mm x 25mm x 1mm. After being activated, the foils were placed in a Canberra Industries well chamber utilizing a NaI(Tl) scintillation detector. The resulting gamma spectrum was acquired and analyzed using Genie 2000 spectroscopy software. One activation foil was placed over the upper, left chest of RANDO where a pacemaker would be. The rest of the foils were placed over the midline of the patient at different distances, providing a spatial distribution over the phantom. Using lasers and BBs to align the patient, 200 MU square fields were delivered to various treatment sites: the brain, the pancreas, and the prostate. Each field was shot at least a day apart, giving more than enough time for activity of the foil to decay (t1=2 = 54.12 min). Results: The net counts (minus background) of the three aforementioned peaks were used for our measurements. These counts were adjusted to account for detector efficiency, relative photon yields from decay, and the natural abundance of 115-In. The average neutron flux for the closed multi-leaf collimator irradiation was measured to be 1.62 x 106 - 0.18 x 106 cm2 s-1. An order of magnitude estimate of the flux for neutrons up to 1 keV from Diffenderfer et al. gives 3 x 106 cm2 s-1 which does agree on the order of magnitude. Conclusion: Lower energy neutrons have higher interaction cross-sections and are more likely to damage pacemakers. The thermal/slow neutron component may be enough to estimate the overall risk. The true test of the applicability of activation foils is whether or not measurements are capable of predicting cardiac device malfunction. For that, additional studies are needed to provide clinical evidence one way or the other.

  19. NEPTUNIUM OXIDE PROCESSING

    SciTech Connect (OSTI)

    Jordan, J; Watkins, R; Hensel, S

    2009-05-27

    The Savannah River Site's HB-Line Facility completed a campaign in which fifty nine cans of neptunium oxide were produced and shipped to the Idaho National Laboratory in the 9975 shipping container. The neptunium campaign was divided into two parts: Part 1 which consisted of oxide made from H-Canyon neptunium solution which did not require any processing prior to conversion into an oxide, and Part 2 which consisted of oxide made from additional H-Canyon neptunium solutions which required processing to purify the solution prior to conversion into an oxide. The neptunium was received as a nitrate solution and converted to oxide through ion-exchange column extraction, precipitation, and calcination. Numerous processing challenges were encountered in order make a final neptunium oxide product that could be shipped in a 9975 shipping container. Among the challenges overcome was the issue of scale: translating lab scale production into full facility production. The balance between processing efficiency and product quality assurance was addressed during this campaign. Lessons learned from these challenges are applicable to other processing projects.

  20. Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

    SciTech Connect (OSTI)

    Jo, Jeong-Wan; Park, Sung Kyu E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon E-mail: skpark@cau.ac.kr

    2014-07-28

    In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

  1. Dye-sensitized solar cell employing zinc oxide aggregates grown in the presence of lithium

    DOE Patents [OSTI]

    Zhang, Qifeng; Cao, Guozhong

    2013-10-15

    Provided are a novel ZnO dye-sensitized solar cell and method of fabricating the same. In one embodiment, deliberately added lithium ions are used to mediate the growth of ZnO aggregates. The use of lithium provides ZnO aggregates that have advantageous microstructure, morphology, crystallinity, and operational characteristics. Employing lithium during aggregate synthesis results in a polydisperse collection of ZnO aggregates favorable for porosity and light scattering. The resulting nanocrystallites forming the aggregates have improved crystallinity and more favorable facets for dye molecule absorption. The lithium synthesis improves the surface stability of ZnO in acidic dyes. The procedures developed and disclosed herein also help ensure the formation of an aggregate film that has a high homogeneity of thickness, a high packing density, a high specific surface area, and good electrical contact between the film and the fluorine-doped tin oxide electrode and among the aggregate particles.

  2. Tin oxide thick film by doping rare earth for detecting traces of CO{sub 2}: Operating in oxygen-free atmosphere

    SciTech Connect (OSTI)

    Xiong, Ya; Zhang, Guozhu; Zhang, Shunping; Zeng, Dawen; Xie, Changsheng, E-mail: csxie@mail.hust.edu.cn

    2014-04-01

    Highlights: • La, Gd, and Lu doped SnO{sub 2} with their sensing properties toward CO{sub 2} were compared. • The microstructures of SnO{sub 2}-based nanoparticles were elaborately characterized. • La-SnO{sub 2} thick film shows superior response toward trace ppm CO{sub 2}. • Our sensing material can be recommended to employ in oxygen-free environment. - Abstract: SnO{sub 2} thick films doped with atomic ratios ranging from 0 up to 8 at.% La, 8 at.% Gd, 8 at.% Lu were fabricated, respectively, via hydrothermal and impregnation methods. The crystal phase, morphology, and chemical composition of the SnO{sub 2}-based nanoparticles were characterized by XRD, FE-SEM, EDX, HRTEM and XPS. Sensing properties of La-SnO{sub 2}, Gd-SnO{sub 2}, Lu-SnO{sub 2} films, as well as the pure SnO{sub 2} film, were analyzed toward CO{sub 2} in the absence of O{sub 2}. It was found that the optimal doping element was La and the best doping ratio was 4 at.%. The maximum response appeared at an operating temperature of 250 °C, on which condition the 4 at.% La-SnO{sub 2} exhibited a remarkable improvement of response from 5.12 to 29.8 when increasing CO{sub 2} concentration from 50 to 500 ppm. Furthermore, the working mechanism underlying such enhancement in CO{sub 2}-sensing functions by La additive in the absence of O{sub 2} was proposed and discussed.

  3. Oxidative Tritium Decontamination System

    DOE Patents [OSTI]

    Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

    2006-02-07

    The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

  4. Controlled CO preferential oxidation

    DOE Patents [OSTI]

    Meltser, M.A.; Hoch, M.M.

    1997-06-10

    Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

  5. Khi i hc k thut thng tin (Undergraduateds School of IES) http://www.uec.ac.jp/ies/faculty/index.html (Jpns)

    E-Print Network [OSTI]

    Yanai, Keiji

    lng Lng t hc Vt liu hc Cht bán dn - Siêu bán dn Thit b in t - Thit b quang in t - T - Vt liu quang Thông tin quang Vt lý rn Sinh hc - Thn kinh hc H thng sinh hc o lng sinh hc Tên thng qun lý doanh nghip... nh hng ngh nghip: K s h thng, K s qun lý sn xut - cht lng sn phm, Chuyên

  6. REDUCTION AND SEQUESTRATION OF PERTECHNETATE TO TECHNETIUM DIOXIDE AND PROTECTION FROM RE-OXIDATION

    SciTech Connect (OSTI)

    DUNCAN JB; JOHNSON JM; MOORE WP; HAGERTY KJ; RHODES RN; MOORE RC

    2012-07-11

    This effort is part of the technetium management initiative and provides data for the handling and disposition of technetium. To that end, the objective of this effort was to challenge tin(II)apatite (Sn(II)apatite) against double-shell tank 241-AN-I0S simulant spiked with pertechnetate (TcO{sub 4}{sup -}). The Sn(II)apatite used in this effort was synthesized on site using a recipe developed at and provided by Sandia National Laboratories; the synthesis provides a high quality product while requiring minimal laboratory effort. The Sn(II)apatite reduces pertechnetate from the mobile +7 oxidation state to the non-mobile +4 oxidation state. It also sequesters the technetium and does not allow for re-oxidization to the mobile +7 state under acidic or oxygenated conditions within the tested period of time (6 weeks). Previous work indicated that the Sn(II)apatite can achieve an ANSI leachability index in Cast Stone of 12.8. The technetium distribution coefficient for Sn(II)apatite exhibits a direct correlation with the pH of the contaminated media. Table 1 shows Sn(II)apatite distribution coefficients as a function of pH. The asterisked numbers indicate that the lower detection limit of the analytical instrument was used to calculate the distribution coefficient as the concentration of technetium left in solution was less than the detection limit.

  7. Bifacial solar cell with SnS absorber by vapor transport deposition

    SciTech Connect (OSTI)

    Wangperawong, Artit; Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F.

    2014-10-27

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  8. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

    1999-01-01

    A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

  9. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

    2001-01-01

    A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

  10. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, S.; Kumar, R.; Krumpelt, M.

    1999-08-24

    A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

  11. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, S.; Kumar, R.; Krumpelt, M.

    1999-08-17

    A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

  12. Tetraalykylammonium polyoxoanionic oxidation catalysts

    DOE Patents [OSTI]

    Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

    1998-01-01

    Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z ›(n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

  13. Tetraalklylammonium polyoxoanionic oxidation catalysts

    DOE Patents [OSTI]

    Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

    1998-10-06

    Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

  14. Investigation of some new hydro(solvo)thermal synthesis routes to nanostructured mixed-metal oxides

    SciTech Connect (OSTI)

    Burnett, David L.; Harunsani, Mohammad H.; Kashtiban, Reza J.; Playford, Helen Y.; Sloan, Jeremy; Hannon, Alex C.; Walton, Richard I.

    2014-06-01

    We present a study of two new solvothermal synthesis approaches to mixed-metal oxide materials and structural characterisation of the products formed. The solvothermal oxidation of metallic gallium by a diethanolamine solution of iron(II) chloride at 240 °C produces a crystalline sample of a spinel-structured material, made up of nano-scale particles typically 20 nm in dimension. XANES spectroscopy at the K-edge shows that the material contains predominantly Fe{sup 2+} in an octahedral environment, but that a small amount of Fe{sup 3+} is also present. Careful analysis using transmission electron microscopy and powder neutron diffraction shows that the sample is actually a mixture of two spinel materials: predominantly (>97%) an Fe{sup 2+} phase Ga{sub 1.8}Fe{sub 1.2}O{sub 3.9}, but with a minor impurity phase that is iron-rich. In contrast, the hydrothermal reaction of titanium bis(ammonium lactato)dihydroxide in water with increasing amounts of Sn(IV) acetate allows nanocrystalline samples of the SnO{sub 2}–TiO{sub 2} solid solution to be prepared directly, as proved by powder XRD and Raman spectroscopy. - Graphical abstract: New solvothermal synthesis approaches to spinel and rutile mixed-metal oxides are reported. - Highlights: • Solvothermal oxidation of gallium metal in organic iron(II) solution gives a novel iron gallate spinel. • Hydrothermal reaction of titanium(IV) complex and tin(IV) acetate produces the complete SnO{sub 2}–TiO{sub 2} solid solution. • Nanostructured mixed-metal oxide phases are produced directly from solution.

  15. Nanostructured transition metal oxides useful for water oxidation catalysis

    DOE Patents [OSTI]

    Frei, Heinz M; Jiao, Feng

    2013-12-24

    The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

  16. Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide

    E-Print Network [OSTI]

    Collins, Gary S.

    molybdenum dioxide displays excellent behavior as catalytic material for the oxidative reforming of bothOxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide Jessica Whalen, Oscar Marin Flores, Su candidate as an effective catalyst for biodiesel. Few papers have been published on the topic of catalytic

  17. Doped zinc oxide microspheres

    DOE Patents [OSTI]

    Arnold, Jr., Wesley D. (Oak Ridge, TN); Bond, Walter D. (Knoxville, TN); Lauf, Robert J. (Oak Ridge, TN)

    1993-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  18. Doped zinc oxide microspheres

    DOE Patents [OSTI]

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  19. Conformations of Organophosphine Oxides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    De Silva, Nuwan; Zahariev, Federico; Hay, Benjamin P.; Gordon, Mark S.; Windus, Theresa L.

    2015-07-29

    The conformations of a series of organophosphine oxides, OP(CH3)2R, where R = methyl, ethyl, isopropyl, tert-butyl, vinyl, and phenyl, are predicted using the MP2/cc-pVTZ level of theory. Comparison of potential energy surfaces for rotation about P–C bonds with crystal structure data reveals a strong correlation between predicted location and energetics of minima and histograms of dihedral angle distributions observed in the solid state. In addition, the most stable conformers are those that minimize the extent of steric repulsion between adjacent rotor substituents, and the torsional barriers tend to increase with the steric bulk of the rotating alkyl group. MM3 forcemore »field parameters were adjusted to fit the MP2 results, providing a fast and accurate model for predicting organophosphine oxides shapes—an essential part of understanding the chemistry of these compounds. The predictive power of the modified MM3 model was tested against MP2/cc-pVTZ conformations for triethylphosphine oxide, OP(CH2CH3)3, and triphenylphosphine oxide, OP(Ph)3.« less

  20. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2012-09-11

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  1. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2014-05-20

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  2. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2013-04-16

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  3. REVIEW OF PLUTONIUM OXIDATION LITERATURE

    SciTech Connect (OSTI)

    Korinko, P.

    2009-11-12

    A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles (<15 {micro}m), moderately sized particles (15 < x < 250 {micro}m) and large particles (> 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

  4. Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

    SciTech Connect (OSTI)

    Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Cho, Yong-Hoon, E-mail: yhc@kaist.ac.kr [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)] [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kwon, Soon-Yong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of) [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Jin Kim, Hee; Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Si Dang, Le [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)] [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2013-11-25

    Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

  5. Doped palladium containing oxidation catalysts

    DOE Patents [OSTI]

    Mohajeri, Nahid

    2014-02-18

    A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

  6. Influence of sputtering power on the optical properties of ITO thin films

    SciTech Connect (OSTI)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  7. Deposition of polyaniline film onto porous silicon layer

    SciTech Connect (OSTI)

    Parkhutik, V.P.; Martinez-Duart, J.M. [Univ. of Madrid, (Spain); Callegja, R.D.; Matveeva, E.M. [Polytechnical Univ. of Valencia, (Spain)

    1993-12-31

    Presently porous silicon (PS) layers are being considered a promising visible light emitting sources. Current research concentrates on the understanding of the nature of the light emission and the development of practical luminescent devices. The last goal is to find an appropriate solid contact to the rough surface of PS layers to ensure high electric conductivity and transparency. The aim of this work is to study the deposition of polyaniline (PANI) films onto porous silicon layers as an alternative to indium tin oxide (ITO) as the electrode.

  8. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    SciTech Connect (OSTI)

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K.; Taylor, A. A.; Mendis, B. G.; Bowen, L.

    2014-02-03

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

  9. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA)

    1994-08-02

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  10. Poly (p-phenyleneneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA); Barton, Thomas J. (Ames, IA); Vardeny, Zeev V. (Salt Lake City, UT)

    1994-10-04

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  11. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect (OSTI)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  12. Nanopillar ITO electrodes via argon plasma etching

    SciTech Connect (OSTI)

    Van Dijken, Jaron G.; Brett, Michael J. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada) and NRC-National Institute for Nanotechnology, Edmonton, Alberta T6G 2M9 (Canada)

    2012-07-15

    The authors demonstrate the formation of vertically aligned indium tin oxide (ITO) nanopillars by exposing planar ITO films to Ar plasma, the conditions of which determine the size, spacing, and aspect ratio of the pillars. Annealing in air and forming gas is used to recover and optimize the optical transmittance and electrical conductivity of the nanopillar films. The final product is an ITO film whose superior optical transmittance and strong electrical conductivity combine with its robust columnar morphology and processing scalability to make it suitable for use in highly absorbing organic solar cells.

  13. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

    1994-08-02

    Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  14. Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures

    SciTech Connect (OSTI)

    Fakhri, M.; Goerrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-St. 21, 42119 Wuppertal (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt Braunschweig, Bundesallee 100, 38116 Braunschweig (Germany)

    2011-09-19

    Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organic light emitting diode displays.

  15. Controlled CO preferential oxidation

    DOE Patents [OSTI]

    Meltser, Mark A. (Pittsford, NY); Hoch, Martin M. (Webster, NY)

    1997-01-01

    Method for controlling the supply of air to a PROX reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference therebetween correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference.

  16. Millisecond Oxidation of Alkanes

    Broader source: Energy.gov [DOE]

    This factsheet describes a project whose goal is to commercialize a production process for propylene and acrylic acid from propane using a catalytic auto-thermal oxydehydrogenation process operating at short contact times. Auto-thermal oxidation for conversion of propane to propylene and acrylic acid promises energy savings of 20 trillion Btu per year by 2020. In addition to reducing energy consumption, this technology can reduce manufacturing costs by up to 25 percent, and reduce a variety of greenhouse gas emissions.

  17. Nonisostructural complex oxide heteroepitaxy

    SciTech Connect (OSTI)

    Wong, Franklin J. Ramanathan, Shriram

    2014-07-01

    The authors present an overview of the fundamentals and representative examples of the growth of epitaxial complex oxide thin films on structurally dissimilar substrates. The authors will delineate how the details of particular crystal structures and symmetry of different oxide surfaces can be employed for a rational approach to the synthesis of nonisostructural epitaxial heterostructures. The concept of oxygen eutaxy can be widely applied. Materials combinations will be split into three categories, and in all cases the films and substrates occur in different crystal structures: (1) common translational and rotational symmetry between the film and substrate planes; (2) translational symmetry mismatch between the substrates and films that is distinct from a simple mismatch in lattice parameters; and (3) rotational symmetry mismatch. In case (1), in principle single-crystalline thin films can be attained despite the films and substrates possessing different crystal structures. In case (2), antiphase boundaries will be prevalent in the thin films. In case (3), thin-film rotational variants that are joined by tilt boundaries will be present. Diffraction techniques to determine crystallographic alignment and epitaxial variants are discussed, and transmission electron microscopy studies to investigate extended defects in the thin films will also be reviewed. The authors end with open problems in this field regarding the structure of oxide interfaces that can be topics for future research.

  18. Thng 9, 2011 Xu t b n b i O ce of International A airs M i thng tin trong t ri ny u c trn m ng. c thng tin chi ti t v c p nh t, xin vui lng

    E-Print Network [OSTI]

    Wu, Yih-Min

    ng. có thông tin chi ti t và c p nh t, xin vui lòng tra c u t i website c a chúng tôi : http Loan Chng trình ào t o c p b ng cho sinh viên qu c t Liên h v i chúng tôi International Student Taiwan University ( i h c qu c gia ài Loan) Room 419, 4F, 2nd Administration Building (Phòng 419, T ng 4

  19. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; De Wolf, Stefaan; Ballif, Christophe

    2015-07-13

    Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (EU)-as a function of the sputtering oxygen partial pressure.more »We obtain an EU as low as 128 meV for films with the highest Hall mobility of 60 cm2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm2/Vs) exhibits a similar EU of 130 meV, while ITO (25 cm2/Vs) presents a much larger EU of up to 270 meV. The high film quality, indicated by the low EU, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.« less

  20. Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

    SciTech Connect (OSTI)

    Särhammar, Erik, E-mail: erik.sarhammar@angstrom.uu.se; Berg, Sören; Nyberg, Tomas [Department of Solid State Electronics, The Ångström Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

    2014-07-01

    This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition rate from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.

  1. Oxidation resistant alloys, method for producing oxidation resistant alloys

    DOE Patents [OSTI]

    Dunning, John S.; Alman, David E.

    2002-11-05

    A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

  2. Oxidation resistant alloys, method for producing oxidation resistant alloys

    DOE Patents [OSTI]

    Dunning, John S. (Corvallis, OR); Alman, David E. (Salem, OR)

    2002-11-05

    A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800.degree. C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800.degree. C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700.degree. C. at a low cost

  3. Zinc oxide varistors and/or resistors

    DOE Patents [OSTI]

    Arnold, Jr., Wesley D. (Oak Ridge, TN); Bond, Walter D. (Knoxville, TN); Lauf, Robert J. (Oak Ridge, TN)

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  4. Zinc oxide varistors and/or resistors

    DOE Patents [OSTI]

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  5. Stratospheric sulfur oxidation kinetics

    SciTech Connect (OSTI)

    Jayne, J.T.; Worsnop, D.R.; Kolb, C.E. [Aerodyne Research, Inc., Billerica, MA (United States)] [and others

    1995-12-31

    Oxidation of SO2 to H2SO4 in the atmosphere is believed to involve the reaction of SO3 with water. It is commonly assumed that this is an important step leading to homogeneous nucleation of H2SO4 aerosol particles. Heterogeneous chemistry on sulfuric acid aerosols regulate much of the ozone photochemistry in the lower stratosphere and are also believed to have significant effect on the climate. Understanding aerosol loading requires a detailed knowledge of the stratospheric sulfur budget, including its oxidation kinetics. Here we present results of a laboratory project studying a key step in the oxidation process, the homogeneous reaction between SO3 and H2O vapor. Kinetic measurements are performed in a high-pressure turbulent fast-flow reactor (fabricated at MIT) which minimizes heterogeneous loss of SO3 on reactorwalls. The rate of decay of SO3 and the appearance of H2SO4 is monitored in the presence of excess water vapor. Gas phase reactants and products are detected via an atmospheric pressure chemical ionization mass spectrometer which is coupled to the exit of the flow reactor. Sulfuric acid nucleation studies can also be performed using the turbulent flow reactor. Initial measurements using a particle detector (based on Mie scattering) showed that aerosol formation and particle size distribution are controlled by varying the SO3/H2O gas ratio and the reactor temperature. Results for the reaction SO3J+ H2O show a second order dependence in water vapor density and a strong negative temperature dependence. The results, measured in the range -30C to +95C, imply that an SO3.H2O adduct and/or a water dimer species is likely involved in the reaction mechanism. Results of recent theoretical calculations on the SO3 + H2O system also support the finding that two water molecules are involved. Implications for the gas phase production of sulfuric acid in the atmosphere will be discussed.

  6. ARM - Oxides of Nitrogen

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Comments?govInstrumentsnoaacrnBarrow, Alaska OutreachCalendar NSA Related LinksOxides of Nitrogen Outreach Home

  7. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  8. CO oxidation on gold-supported iron oxides: New insights into strong oxide–metal interactions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Liang; Liu, Yun; Yang, Fan; Evans, Jaime; Rodriguez, José A.; Liu, Ping

    2015-07-14

    Very active FeOx–Au catalysts for CO oxidation are obtained after depositing nanoparticles of FeO, Fe3O4, and Fe2O3 on a Au(111) substrate. Neither FeO nor Fe2O3 is stable under the reaction conditions. Under an environment of CO/O2, they undergo oxidation (FeO) or reduction (Fe2O3) to yield nanoparticles of Fe3O4 that are not formed in a bulk phase. Using a combined experimental and theoretical approach, we show a strong oxide–metal interaction (SOMI) between Fe3O4 nanostructures and Au(111), which gives the oxide special properties, allows the formation of an active phase, and provides a unique interface to facilitate a catalytic reaction. This workmore »highlights the important role that the SOMI can play in enhancing the catalytic performance of the oxide component in metal–oxide catalysts.« less

  9. Operation of staged membrane oxidation reactor systems

    DOE Patents [OSTI]

    Repasky, John Michael

    2012-10-16

    A method of operating a multi-stage ion transport membrane oxidation system. The method comprises providing a multi-stage ion transport membrane oxidation system with at least a first membrane oxidation stage and a second membrane oxidation stage, operating the ion transport membrane oxidation system at operating conditions including a characteristic temperature of the first membrane oxidation stage and a characteristic temperature of the second membrane oxidation stage; and controlling the production capacity and/or the product quality by changing the characteristic temperature of the first membrane oxidation stage and/or changing the characteristic temperature of the second membrane oxidation stage.

  10. Arsenite Oxidation by a Poorly Crystalline Manganese-Oxide 1.

    E-Print Network [OSTI]

    Sparks, Donald L.

    N J . L A F F E R T Y , * M A T T H E W G I N D E R - V O G E L , A N D D O N A L D L . S P A R KArsenite Oxidation by a Poorly Crystalline Manganese-Oxide 1. Stirred-Flow Experiments B R A N D O

  11. Ceramic oxide powders and the formation thereof

    DOE Patents [OSTI]

    Katz, Joseph L. (Baltimore, MD); Hung, Cheng-Hung (Baltimore, MD)

    1993-01-01

    Ceramic oxide powders and a method for their preparation. Ceramic oxide powders are obtained using a flame process whereby two or more precursors of ceramic oxides are introduced into a counterflow diffusion flame burner wherein said precursors are converted into ceramic oxide powders. The morphology, particle size, and crystalline form of the ceramic oxide powders are determined by process conditions.

  12. Ceramic oxide powders and the formation thereof

    DOE Patents [OSTI]

    Katz, J.L.; Chenghung Hung.

    1993-12-07

    Ceramic oxide powders and a method for their preparation. Ceramic oxide powders are obtained using a flame process whereby two or more precursors of ceramic oxides are introduced into a counterflow diffusion flame burner wherein said precursors are converted into ceramic oxide powders. The morphology, particle size, and crystalline form of the ceramic oxide powders are determined by process conditions. 14 figures.

  13. Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications

    E-Print Network [OSTI]

    Nicholas, Jason.D.

    2007-01-01

    Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.Tubular Solid Oxide Fuel Cell Technology, U.S. Department ofOxide Films for Solid Oxide Fuel Cell Applications by Jason

  14. Ultra Supercritical Steamside Oxidation

    SciTech Connect (OSTI)

    Holcomb, Gordon R.; Cramer, Stephen D.; Covino, Bernard S., Jr.; Bullard, Sophie J.; Ziomek-Moroz, Malgorzata

    2005-01-01

    Ultra supercritical (USC) power plants offer the promise of higher efficiencies and lower emissions, which are goals of the U.S. Department of Energy's Advanced Power Systems Initiatives. Most current coal power plants in the U.S. operate at a maximum steam temperature of 538 C. However, new supercritical plants worldwide are being brought into service with steam temperatures of up to 620 C. Current Advanced Power Systems goals include coal generation at 60% efficiency, which require steam temperatures of up to 760 C. This research examines the steamside oxidation of advanced alloys for use in USC systems, with emphasis placed on alloys for high- and intermediate-pressure turbine sections. Initial results of this research are presented.

  15. SOOT-CATALYZED OXIDATION OF SULFUR DIOXIDE

    E-Print Network [OSTI]

    Chang, S.G.

    2010-01-01

    and T. Novakov, "Catalytic oxidation of S02 on carbon inThe mechanism of catalytic oxidation on activated carbon;of water in the catalytic oxidation of S02 on carbonaceous

  16. Detection of oxidation in human serum lipoproteins 

    E-Print Network [OSTI]

    Myers, Christine Lee

    2006-04-12

    A method for the oxidation of lipoproteins in vitro was developed using the free radical initiator, 2,2?-azobis-(2-amidinopropane) dihydrochloride (AAPH). Following in vitro oxidation, the susceptibility to oxidation of the serum samples...

  17. High color rendering index white light emitting diodes fabricated from a combination of carbon dots and zinc copper indium sulfide quantum dots

    SciTech Connect (OSTI)

    Sun, Chun; Liu, Wenyan; Zhang, Xiaoyu; Zhang, Yu E-mail: wyu6000@gmail.com; Wang, Yu; Kalytchuk, Sergii; Kershaw, Stephen V.; Rogach, Andrey L.; Zhang, Tieqiang; Zhao, Jun; Yu, William W. E-mail: wyu6000@gmail.com

    2014-06-30

    In a line with most recent trends in developing non-toxic fluorescent nanomaterials, we combined blue emissive carbon dots with green and red emissive zinc copper indium sulfide (ZCIS) core/shell quantum dots (QDs) to achieve white light-emitting diodes (WLEDs) with a high color rendering index of 93. This indicates that ZCIS QDs, with their broad emission bands, can be employed to effectively make up the emission of carbon dots in the yellow and red regions to produce WLEDs in the wide region of color temperature by tuning the volume ratio of these constituting luminophores. Their electroluminescence characteristics including color rendering index, Commission Internationale de l'Eclairage (CIE) color coordinates, and color temperatures were evaluated as a function of forward current. The CIE-1931 chromaticity coordinates of the as-prepared WLEDs, exhibiting good stability, were slightly shifted from (0.321, 0.312) at 10?mA to (0.351, 0.322) at 30?mA, which was mainly caused by the different thermal quenching coefficients of carbon dots and ZCIS QDs.

  18. Ethanol oxidation on metal oxide-supported platinum catalysts

    SciTech Connect (OSTI)

    L. M. Petkovic 090468; Sergey N. Rashkeev; D. M. Ginosar

    2009-09-01

    Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on Ethanol is a renewable fuel that can be used as an additive to gasoline (or its substitute) with the advantage of octane enhancement and reduced carbon monoxide exhaust emissions. However, on the standard three-way catalysts, the conversion of unburned ethanol is low because both ethanol and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of “stoves” that burn ethanol molecules and their partially oxidized derivatives to the “final” products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.and some of its partially oxidized derivatives are highly resistant to oxidation. A combination of first-principles density-functional theory (DFT) based calculations and in-situ diffuse reflectance infrared spectroscopy (DRIFTS) analysis was applied to uncover some of the fundamental phenomena associated with ethanol oxidation on Pt containing catalysts. In particular, the objective was to analyze the role of the oxide (i.e., ?-Al2O3 or SiO2) substrate on the ethanol oxidation activity. The results showed that Pt nanoparticles trap and accumulate oxygen at their surface and perimeter sites and play the role of “stoves” that burn ethanol molecules and their partially oxidized derivatives to the “final” products. The ?-Al2O3 surfaces provided higher mobility of the fragments of ethanol molecules than the SiO2 surface and hence increased the supply rate of these objects to the Pt particles. This will in turn produce a higher conversion rate of unburned ethanol.

  19. Gold catalyst Styrene Benzaldehyde Styrene oxide Acetophenone

    E-Print Network [OSTI]

    Rouyer, Francois

    O O O + + O2 Gold catalyst Styrene Benzaldehyde Styrene oxide Acetophenone studies. However styrene. The reaction chiefly yielded benzaldehyde, with smaller amounts of styrene oxide and acetophenone

  20. New manganese catalyst for light alkane oxidation

    DOE Patents [OSTI]

    Durante, Vincent A. (West Chester, PA); Lyons, James E. (Wallingford, PA); Walker, Darrell W. (Visalia, CA); Marcus, Bonita K. (Radnor, PA)

    1994-01-01

    Aluminophosphates containing manganese in the structural framework are employed for the oxidation of alkanes, for example the vapor phase oxidation of methane to methanol.

  1. Investigation of Mixed Oxide Catalysts for NO Oxidation

    SciTech Connect (OSTI)

    Szanyi, Janos; Karim, Ayman M.; Pederson, Larry R.; Kwak, Ja Hun; Mei, Donghai; Tran, Diana N.; Herling, Darrell R.; Muntean, George G.; Peden, Charles HF; Howden, Ken; Qi, Gongshin; Li, Wei

    2014-12-09

    The oxidation of engine-generated NO to NO2 is an important step in the reduction of NOx in lean engine exhaust because NO2 is required for the performance of the LNT technology [2], and it enhances the activities of ammonia selective catalytic reduction (SCR) catalysts [1]. In particular, for SCR catalysts an NO:NO2 ratio of 1:1 is most effective for NOx reduction, whereas for LNT catalysts, NO must be oxidized to NO2 before adsorption on the storage components. However, NO2 typically constitutes less than 10% of NOx in lean exhaust, so catalytic oxidation of NO is essential. Platinum has been found to be especially active for NO oxidation, and is widely used in DOC and LNT catalysts. However, because of the high cost and poor thermal durability of Pt-based catalysts, there is substantial interest in the development of alternatives. The objective of this project, in collaboration with partner General Motors, is to develop mixed metal oxide catalysts for NO oxidation, enabling lower precious metal usage in emission control systems. [1] M. Koebel, G. Madia, and M. Elsener, Catalysis Today 73, 239 (2002). [2] C. H. Kim, G. S. Qi, K. Dahlberg, and W. Li, Science 327, 1624 (2010).

  2. Nanostructured Metal Oxide Anodes (Presentation)

    SciTech Connect (OSTI)

    Dillon, A. C.; Riley, L. A.; Lee, S.-H.; Kim, Y.-H.; Ban, C.; Gillaspie, D. T.; Pesaran, A.

    2009-05-01

    This summarizes NREL's FY09 battery materials research activity in developing metal oxide nanostructured anodes to enable high-energy, durable and affordable li-ion batteries for HEVs and PHEVs.

  3. Oxides having high energy densities

    DOE Patents [OSTI]

    Ceder, Gerbrand; Kang, Kisuk

    2013-09-10

    Certain disclosed embodiments generally relate to oxide materials having relatively high energy and/or power densities. Various aspects of the embodiments are directed to oxide materials having a structure B.sub.i(M.sub.jY.sub.k)O.sub.2, for example, a structure Li.sub.j(Ni.sub.jY.sub.k)O.sub.2 such as Li(Ni.sub.0.5Mn.sub.0.5)O.sub.2. In this structure, Y represents one or more atoms, each independently selected from the group consisting of alkaline earth metals, transition metals, Group 14 elements, Group 15, or Group 16 elements. In some embodiments, such an oxide material may have an O3 crystal structure, and/or a layered structure such that the oxide comprises a plurality of first, repeating atomic planes comprising Li, and a plurality of second, repeating atomic planes comprising Ni and/or Y.

  4. Introduction Transparent conducting oxides (TCOs)

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    , In3 , Ga3 , and Sn4 ). Four of these form TCOs as single-cation oxides (ZnO, CdO, In2O3, and SnO2 for more than 50 years, pri- marily in the form of doped single-cation oxides such as In2O3 and SnO2) when appro- priately doped, whereas Ga2O3 is a wide- bandgap insulator. There are 10 binary, 10 ternary

  5. Thin film hydrous metal oxide catalysts

    DOE Patents [OSTI]

    Dosch, Robert G. (Albuquerque, NM); Stephens, Howard P. (Albuquerque, NM)

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  6. Electronic Transitions in Perovskite Oxide Heterostructures

    E-Print Network [OSTI]

    Wong, Franklin

    2011-01-01

    perovskite . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 i The distorted perovskite . . . . . . . .Basic Aspects of Correlated Perovskite Oxides The Perovskite

  7. Millisecond Oxidation of Alkanes

    SciTech Connect (OSTI)

    Scott Han

    2011-09-30

    This project was undertaken in response to the Department of Energy's call to research and develop technologies 'that will reduce energy consumption, enhance economic competitiveness, and reduce environmental impacts of the domestic chemical industry.' The current technology at the time for producing 140 billion pounds per year of propylene from naphtha and Liquified Petroleum Gas (LPG) relied on energy- and capital-intensive steam crackers and Fluidized Catalytic Cracking (FCC) units. The propylene is isolated from the product stream in a costly separation step and subsequently converted to acrylic acid and other derivatives in separate production facilities. This project proposed a Short Contact Time Reactor (SCTR)-based catalytic oxydehydrogenation process that could convert propane to propylene and acrylic acid in a cost-effective and energy-efficient fashion. Full implementation of this technology could lead to sizeable energy, economic and environmental benefits for the U. S. chemical industry by providing up to 45 trillion BTUs/year, cost savings of $1.8 billion/year and a combined 35 million pounds/year reduction in environmental pollutants such as COx, NOx, and SOx. Midway through the project term, the program directive changed, which approval from the DOE and its review panel, from direct propane oxidation to acrylic acid at millisecond contact times to a two-step process for making acrylic acid from propane. The first step was the primary focus, namely the conversion of propane to propylene in high yields assisted by the presence of CO2. The product stream from step one was then to be fed directly into a commercially practiced propylene-to-acrylic acid tandem reactor system.

  8. Development of a Zirconia-Based Electrochemical Sensor for the Detection of Hydrogen in Air

    SciTech Connect (OSTI)

    Brosha, E; Mukundan, R; Lujan, R; Garzon, F; Woo, L; Worsley, M; Glass, B

    2008-07-16

    Mixed potential sensors utilizing a machined, dense indium-tin oxide working electrode (In{sub 2}O{sub 3}:SnO{sub 2}; 90%:10%), a Pt wire counter electrode, and porous YSZ electrolyte were prepared using ceramic tape casting methods. The response of these devices to hydrogen concentrations up to 2% in air were studied from 600 to 740 C. The sensor response exhibited a reversible behavior and a fast response time with sensitivity increasing with decreasing temperature. GC analysis confirmed significant heterogeneous oxidation of the H{sub 2} on heated furnace tube wall surfaces thus driving sensor response at H{sub 2} concentrations greater than a few hundred ppm. The transition to a cold wall, miniature platform heater significantly reduced hydrogen oxidation although some flow rate dependence remains.

  9. In situ reduction and oxidation of nickel from solid oxide fuel cells in a Titan ETEM

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    In situ reduction and oxidation of nickel from solid oxide fuel cells in a Titan ETEM A. Faes1. C. Singhal, K. Kendall, High Temperature Solid Oxide Fuel Cell - Fundamentals, Design, Denmark antonin.faes@epfl.ch Keywords: In situ ETEM, nickel oxide, reduction, RedOx, SOFC Solid Oxide Fuel

  10. Method for plating with metal oxides

    DOE Patents [OSTI]

    Silver, G.L.; Martin, F.S.

    1994-08-23

    A method is disclosed of plating hydrous metal oxides on at least one substrate, which method is indifferent to the electrochemical properties of the substrate, and comprises reacting metallic ions in aqueous solution with an appropriate oxidizing agent such as sodium hypochlorite or calcium sulfite with oxygen under suitable conditions of pH and concentration such that oxidation and precipitation of metal oxide are sufficiently slow to allow satisfactory plating of metal oxide on the substrate. 1 fig.

  11. Method for plating with metal oxides

    DOE Patents [OSTI]

    Silver, Gary L. (Centerville, OH); Martin, Frank S. (Farmersville, OH)

    1994-08-23

    A method of plating hydrous metal oxides on at least one substrate, which method is indifferent to the electrochemical properties of the substrate, and comprises reacting metallic ions in aqueous solution with an appropriate oxidizing agent such as sodium hypochlorite or calcium sulfite with oxygen under suitable conditions of pH and concentration such that oxidation and precipitation of metal oxide are sufficiently slow to allow satisfactory plating of metal oxide on the substrate.

  12. Reactive Spreading of a Lead-Free Solder on Alumina

    E-Print Network [OSTI]

    Gremillard, L.; Saiz, E.; Radmilovic, V.R.; Tomsia, A.P.

    2008-01-01

    below 550°C, a solid oxide layer encapsulates the liquidoxidation of tin, a tin oxide layer around the metallic dropto the formation of an oxide layer encapsulating the metal.

  13. VOLUME 88, NUMBER 14 P H Y S I C A L R E V I E W L E T T E R S 8 APRIL 2002 Absolute TiN(111) Step Energies from Analysis of Anisotropic Island Shape Fluctuations

    E-Print Network [OSTI]

    Khare, Sanjay V.

    .45.Mp NaCl-structure titanium nitride (TiN) is widely used as a hard, wear-resistant coating on cutting tools, as a dif- fusion barrier in microelectronic devices, and as a corro- sion and abrasion resistant

  14. Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application

    E-Print Network [OSTI]

    Boyer, Edmond

    for the physicochemical characterization in order to study the junction interface and determine the oxide thickness reflectance. Electrical characteristics of the structures with different oxide thicknesses and an evaporated insulating materials with a higher dielectric constant.1 These materials shall lead to a high capacitance

  15. Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications

    E-Print Network [OSTI]

    Nicholas, Jason.D.

    2007-01-01

    Films for Solid Oxide Fuel Cell Applications by Jason Dalefor Solid Oxide Fuel Cell Applications Copyright 2007 byFilms for Solid Oxide Fuel Cell Applications by Jason Dale

  16. Solid oxide electrochemical reactor science.

    SciTech Connect (OSTI)

    Sullivan, Neal P.; Stechel, Ellen Beth; Moyer, Connor J.; Ambrosini, Andrea; Key, Robert J.

    2010-09-01

    Solid-oxide electrochemical cells are an exciting new technology. Development of solid-oxide cells (SOCs) has advanced considerable in recent years and continues to progress rapidly. This thesis studies several aspects of SOCs and contributes useful information to their continued development. This LDRD involved a collaboration between Sandia and the Colorado School of Mines (CSM) ins solid-oxide electrochemical reactors targeted at solid oxide electrolyzer cells (SOEC), which are the reverse of solid-oxide fuel cells (SOFC). SOECs complement Sandia's efforts in thermochemical production of alternative fuels. An SOEC technology would co-electrolyze carbon dioxide (CO{sub 2}) with steam at temperatures around 800 C to form synthesis gas (H{sub 2} and CO), which forms the building blocks for a petrochemical substitutes that can be used to power vehicles or in distributed energy platforms. The effort described here concentrates on research concerning catalytic chemistry, charge-transfer chemistry, and optimal cell-architecture. technical scope included computational modeling, materials development, and experimental evaluation. The project engaged the Colorado Fuel Cell Center at CSM through the support of a graduate student (Connor Moyer) at CSM and his advisors (Profs. Robert Kee and Neal Sullivan) in collaboration with Sandia.

  17. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect (OSTI)

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  18. Method for hot pressing beryllium oxide articles

    DOE Patents [OSTI]

    Ballard, Ambrose H. (Oak Ridge, TN); Godfrey, Jr., Thomas G. (Oak Ridge, TN); Mowery, Erb H. (Clinton, TN)

    1988-01-01

    The hot pressing of beryllium oxide powder into high density compacts with little or no density gradients is achieved by employing a homogeneous blend of beryllium oxide powder with a lithium oxide sintering agent. The lithium oxide sintering agent is uniformly dispersed throughout the beryllium oxide powder by mixing lithium hydroxide in an aqueous solution with beryllium oxide powder. The lithium hydroxide is converted in situ to lithium carbonate by contacting or flooding the beryllium oxide-lithium hydroxide blend with a stream of carbon dioxide. The lithium carbonate is converted to lithium oxide while remaining fixed to the beryllium oxide particles during the hot pressing step to assure uniform density throughout the compact.

  19. A novel inorganic-organic compound: Synthesis and structural characterization of tin(II) phenylbis(phosphonate), Sn{sub 2}(PO{sub 3}C{sub 6}H{sub 4}PO{sub 3})

    SciTech Connect (OSTI)

    Subbiah, Ayyappan; Bhuvanesh, Nattamai; Clearfield, Abraham . E-mail: clearfield@mail.chem.tamu.edu

    2005-04-15

    A novel tin(II) phenylbis(phosphonate) compound has been synthesized hydrothermally and its structure has been determined by single crystal X-ray diffraction. The structure is monoclinic, space group P2{sub 1}/c (no. 14), a=4.8094(4), b=16.2871(13), c=6.9107(6)A; {beta}=106.292(6){sup o}, V=519.59(7)A{sup 3}, Z=2. The three-dimensional structure consists of 3-coordinated tin and 4-coordinated phosphorus double layers separated (pillared) by phenyl rings. These phenyl rings are placed 4.8A apart along the a-axis in the structure resulting in lower surface area ({approx}14m{sup 2}/g). The porosity has been increased by replacing phenyl groups by methyl groups ({approx}31m{sup 2}/g)

  20. Patterning by area selective oxidation

    DOE Patents [OSTI]

    Nam, Chang-Yong; Kamcev, Jovan; Black, Charles T.; Grubbs, Robert

    2015-12-29

    Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.

  1. Aromatic-radical oxidation chemistry

    SciTech Connect (OSTI)

    Glassman, I.; Brezinsky, K. [Princeton Univ., NJ (United States)

    1993-12-01

    The research effort has focussed on discovering an explanation for the anomalously high CO{sub 2} concentrations observed early in the reaction sequence of the oxidation of cyclopentadiene. To explain this observation, a number of plausible mechanisms have been developed which now await experimental verification. One experimental technique for verifying mechanisms is to probe the reacting system by perturbing the radical concentrations. Two forms of chemical perturbation of the oxidation of cyclopentadiene were begun during this past year--the addition of NO{sub 2} and CO to the reacting mixture.

  2. Solid oxide fuel cell generator

    DOE Patents [OSTI]

    Draper, R.; George, R.A.; Shockling, L.A.

    1993-04-06

    A solid oxide fuel cell generator has a pair of spaced apart tubesheets in a housing. At least two intermediate barrier walls are between the tubesheets and define a generator chamber between two intermediate buffer chambers. An array of fuel cells have tubes with open ends engaging the tubesheets. Tubular, axially elongated electrochemical cells are supported on the tubes in the generator chamber. Fuel gas and oxidant gas are preheated in the intermediate chambers by the gases flowing on the other side of the tubes. Gas leakage around the tubes through the tubesheets is permitted. The buffer chambers reentrain the leaked fuel gas for reintroduction to the generator chamber.

  3. Solid oxide fuel cell generator

    DOE Patents [OSTI]

    Draper, Robert (Churchill Boro, PA); George, Raymond A. (Pittsburgh, PA); Shockling, Larry A. (Plum Borough, PA)

    1993-01-01

    A solid oxide fuel cell generator has a pair of spaced apart tubesheets in a housing. At least two intermediate barrier walls are between the tubesheets and define a generator chamber between two intermediate buffer chambers. An array of fuel cells have tubes with open ends engaging the tubesheets. Tubular, axially elongated electrochemical cells are supported on the tubes in the generator chamber. Fuel gas and oxidant gas are preheated in the intermediate chambers by the gases flowing on the other side of the tubes. Gas leakage around the tubes through the tubesheets is permitted. The buffer chambers reentrain the leaked fuel gas for reintroduction to the generator chamber.

  4. SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL

    E-Print Network [OSTI]

    Mease, Kenneth D.

    module Gas turbine module (compressor and turbine sub-modules) Combustor module Catalytic oxidizer module, MCFC, PEM, Gas Turbine General Model Assumptions · 1D process flow · Well-stirred within nodal volume Nerst Potential · Ideal operating voltage with respect to partial pressures of cell reactants Steam

  5. Pre-Oxidized and Nitrided Stainless Steel Foil for Proton Exchange Membrane Fuel Cell Bipolar Plates: Part 2- Single-Cell Fuel Cell Evaluation of Stamped Plates

    SciTech Connect (OSTI)

    Toops, Todd J [ORNL; Brady, Michael P [ORNL; Tortorelli, Peter F [ORNL; Pihl, Josh A [ORNL; EstevezGenCell, Francisco [GenCell Corp; Connors, Dan [GenCell Corp; Garzon, Fernando [Los Alamos National Laboratory (LANL); Rockward, Tommy [Los Alamos National Laboratory (LANL); Gervasio, Don [Arizona State University; Kosaraju, S.H. [Arizona State University

    2010-01-01

    Thermal (gas) nitridation of stainless steel alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant nitride containing surface layers (Cr{sub 2}N, CrN, TiN, V{sub 2}N, VN, etc.) of interest for fuel cells, batteries, and sensors. This paper presents results of proton exchange membrane (PEM) single-cell fuel cell studies of stamped and pre-oxidized/nitrided developmental Fe-20Cr-4V weight percent (wt.%) and commercial type 2205 stainless steel alloy foils. The single-cell fuel cell behavior of the stamped and pre-oxidized/nitrided material was compared to as-stamped (no surface treatment) 904L, 2205, and Fe-20Cr-4V stainless steel alloy foils and machined graphite of similar flow field design. The best fuel cell behavior among the alloys was exhibited by the pre-oxidized/nitrided Fe-20Cr-4V, which exhibited {approx}5-20% better peak power output than untreated Fe-20Cr-4V, 2205, and 904L metal stampings. Durability was assessed for pre-oxidized/nitrided Fe-20Cr-4V, 904L metal, and graphite plates by 1000+ h of cyclic single-cell fuel cell testing. All three materials showed good durability with no significant degradation in cell power output. Post-test analysis indicated no metal ion contamination of the membrane electrode assemblies (MEAs) occurred with the pre-oxidized and nitrided Fe-20Cr-4V or graphite plates, and only a minor amount of contamination with the 904L plates.

  6. Size Effect of Ruthenium Nanoparticles in Catalytic Carbon Monoxide Oxidation

    E-Print Network [OSTI]

    Joo, Sang Hoon

    2011-01-01

    sensitivity The catalytic oxidation of carbon monoxide (CO)stabilizer. The catalytic activity of CO oxidation overintriguing catalytic behavior for CO oxidation 5-15 ; while

  7. Biomimetic C-H Oxidation Catalysis in Aqueous Solution

    E-Print Network [OSTI]

    Djernes, Katherine Elizabeth

    2013-01-01

    Y. ; Breslow, R. "Catalytic Oxidations of Steroid Substratesapplicable catalytic methods for hydrocarbon oxidation haveof hydrocarbon oxidation catalysts 1.7 and 1.8 The catalytic

  8. Chemically Modified Metal Oxide Nanostructure for Photoelectrochemical Water Splitting

    E-Print Network [OSTI]

    Wang, Gongming

    2013-01-01

    be good catalysts for catalytic oxidation of small organicsolution, indicative of catalytic oxidation of urea presentactive catalytic species for water oxidation. The catalytic

  9. Ferroelectricity in undoped hafnium oxide

    SciTech Connect (OSTI)

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20?nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10??C?cm{sup ?2} as well as a read/write endurance of 1.6?×?10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  10. Solid oxide fuel cell generator

    DOE Patents [OSTI]

    Di Croce, A. Michael (Murrysville, PA); Draper, Robert (Churchill Boro, PA)

    1993-11-02

    A solid oxide fuel cell generator has a plenum containing at least two rows of spaced apart, annular, axially elongated fuel cells. An electrical conductor extending between adjacent rows of fuel cells connects the fuel cells of one row in parallel with each other and in series with the fuel cells of the adjacent row.

  11. Solid oxide fuel cell generator

    DOE Patents [OSTI]

    Di Croce, A.M.; Draper, R.

    1993-11-02

    A solid oxide fuel cell generator has a plenum containing at least two rows of spaced apart, annular, axially elongated fuel cells. An electrical conductor extending between adjacent rows of fuel cells connects the fuel cells of one row in parallel with each other and in series with the fuel cells of the adjacent row. 5 figures.

  12. Perovskite catalysts for oxidative coupling

    DOE Patents [OSTI]

    Campbell, Kenneth D. (Charleston, WV)

    1991-01-01

    Perovskites of the structure A.sub.2 B.sub.2 C.sub.3 O.sub.10 are useful as catalysts for the oxidative coupling of lower alkane to heavier hydrocarbons. A is alkali metal; B is lanthanide or lanthanum, cerium, neodymium, samarium, praseodymium, gadolinium or dysprosium; and C is titanium.

  13. Perovskite catalysts for oxidative coupling

    DOE Patents [OSTI]

    Campbell, K.D.

    1991-06-25

    Perovskites of the structure A[sub 2]B[sub 2]C[sub 3]O[sub 10] are useful as catalysts for the oxidative coupling of lower alkane to heavier hydrocarbons. A is alkali metal; B is lanthanide or lanthanum, cerium, neodymium, samarium, praseodymium, gadolinium or dysprosium; and C is titanium.

  14. Genomic consequences of DNA oxidation by peroxynitrite

    E-Print Network [OSTI]

    Neeley, William Louis

    2006-01-01

    The radicals nitric oxide and superoxide are produced endogenously by activated macrophages and neutrophils and combine in a diffusion-limited reaction to form peroxynitrite, a powerful oxidizing and nitrating agent capable ...

  15. Complex oxides useful for thermoelectric energy conversion

    DOE Patents [OSTI]

    Majumdar, Arunava (Orinda, CA); Ramesh, Ramamoorthy (Moraga, CA); Yu, Choongho (College Station, TX); Scullin, Matthew L. (Berkeley, CA); Huijben, Mark (Enschede, NL)

    2012-07-17

    The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.

  16. Rare Iron Oxide in Ancient Chinese Pottery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rare Iron Oxide in Ancient Chinese Pottery Rare Iron Oxide in Ancient Chinese Pottery Print Friday, 26 September 2014 14:37 Jian ware (or Tenmoku) ceramic bowls, famous for their...

  17. Solid Oxide Fuel Cell Manufacturing Overview

    E-Print Network [OSTI]

    Solid Oxide Fuel Cell Manufacturing Overview Hydrogen and Fuel Cell Technologies Manufacturing R Reserved. 3 The Solid Oxide Fuel Cell Electrochemistry #12;Copyright © 2011 Versa Power Systems. All Rights

  18. Nanostructured Solid Oxide Fuel Cell Electrodes

    E-Print Network [OSTI]

    Sholklapper, Tal Zvi

    2007-01-01

    post-Doping of Solid Oxide Fuel Cell Cathodes,? P.h.D.and Technology of Ceramic Fuel Cells, p. 209, Elsevier, NewI. Birss, in Solid Oxide Fuel Cells (SOFC IX), S. C. Singhal

  19. Nanostructured Solid Oxide Fuel Cell Electrodes

    E-Print Network [OSTI]

    Sholklapper, Tal Zvi

    2007-01-01

    in Solid Oxide Fuel Cells (SOFC IX), S. C. Singhal and J.create connected nanostructured SOFC electrodes is reviewed.of Solid Oxide Fuel Cells (SOFC) to directly and efficiently

  20. Final Report for "Boron and Tin in Nuclear Medicien: The Development of Reactive Solid-State Reagents for PET and SPECT

    SciTech Connect (OSTI)

    George W. Kabalka

    2006-01-13

    The research program was directed at the use of functionalized organometallic reagents that would rapidly react with radiolabeled agents generated by a medical cyclotron or reactor. The radioisotopes included fluorine-18, oxgygen-15, nitrogen-13, carbon-11 and iodine-123; all short lived nuclides of importantce in nuclear medicine imaging studies utilizing emission tomography techniques. The early studies led to the development of extensive new isotope incorporation chemistry. These studies validated the feasibility of using reactive intermediates, such as the organoboranes, and acted as a catalyst for others to investigate organometallic agents based on mercury, tin, and silicon. A large number of radiolabeling techniques and radiopharmaceuticals were developed. These included agents for use in oncology, neurology, and metabolism. The research resulted in the generation of one hundred and one journal articles, eighty seven refereed published abstracts and forty one invited lectures. Thirteen postdoctoral students, fourteen graduate students, and twenty eight undergraduate students were trained in the scientific aspects of nuclear medicine imaging under the asupices of this grant.

  1. High quality oxide films on substrates

    DOE Patents [OSTI]

    Ruckman, Mark W. (Middle Island, NY); Strongin, Myron (Center Moriches, NY); Gao, Yong L. (Henrietta, NY)

    1994-01-01

    A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

  2. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, Barbara K. (Charleston, WV)

    1991-01-01

    Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  3. High quality oxide films on substrates

    DOE Patents [OSTI]

    Ruckman, M.W.; Strongin, M.; Gao, Y.L.

    1994-02-01

    A method is described for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material. 4 figures.

  4. Comment on "Catalytic Activity of the Rh Surface Oxide: CO Oxidation over Rh(111)

    E-Print Network [OSTI]

    Goodman, Wayne

    . Obviously, heating Rh in pure oxygen to T ) 230 °C and above will lead to the formation of surface Rh oxideComment on "Catalytic Activity of the Rh Surface Oxide: CO Oxidation over Rh(111) under Realistic suggest the importance of a surface oxide phase for high CO2 formation in CO-O2 reactions. However

  5. Correlating Catalytic Methanol Oxidation with the Structure and Oxidation State of Size-Selected Pt Nanoparticles

    E-Print Network [OSTI]

    Kik, Pieter

    Correlating Catalytic Methanol Oxidation with the Structure and Oxidation State of Size-Selected Pt nanoparticles (NPs) prepared by micelle encapsulation and supported on -Al2O3 during the oxidation of methanol the pretreatment. KEYWORDS: platinum, methanol oxidation, operando, XAFS, EXAFS, XANES, alumina, nanoparticle, size

  6. Dense high temperature ceramic oxide superconductors

    DOE Patents [OSTI]

    Landingham, R.L.

    1993-10-12

    Dense superconducting ceramic oxide articles of manufacture and methods for producing these articles are described. Generally these articles are produced by first processing these superconducting oxides by ceramic processing techniques to optimize materials properties, followed by reestablishing the superconducting state in a desired portion of the ceramic oxide composite.

  7. Dense high temperature ceramic oxide superconductors

    DOE Patents [OSTI]

    Landingham, Richard L. (Livermore, CA)

    1993-01-01

    Dense superconducting ceramic oxide articles of manufacture and methods for producing these articles are described. Generally these articles are produced by first processing these superconducting oxides by ceramic processing techniques to optimize materials properties, followed by reestablishing the superconducting state in a desired portion of the ceramic oxide composite.

  8. Fluidized-bed copper oxide process

    SciTech Connect (OSTI)

    Shah, P.P.; Takahashi, G.S.; Leshock, D.G.

    1991-10-14

    The fluidized-bed copper oxide process was developed to simultaneously remove sulfur dioxide and nitrogen oxide contaminants from the flue gas of coal-fired utility boilers. This dry and regenerable process uses a copper oxide sorbent in a fluidized-bed reactor. Contaminants are removed without generating waste material. (VC)

  9. Electrochromic window with high reflectivity modulation

    DOE Patents [OSTI]

    Goldner, Ronald B. (Lexington, MA); Gerouki, Alexandra (Medford, MA); Liu, Te-Yang (Arlington, MA); Goldner, Mark A. (Cambridge, MA); Haas, Terry E. (Southborough, MA)

    2000-01-01

    A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

  10. Electrochemistry, Photoelectrochemistry And Photoelectron Spectroscopy Of Nanostructured Metal Oxides

    E-Print Network [OSTI]

    Södergren, S

    1997-01-01

    Electrochemistry, Photoelectrochemistry And Photoelectron Spectroscopy Of Nanostructured Metal Oxides

  11. Electronic structure of graphene oxide and reduced graphene oxide monolayers

    SciTech Connect (OSTI)

    Sutar, D. S.; Singh, Gulbagh; Divakar Botcha, V.

    2012-09-03

    Graphene oxide (GO) monolayers obtained by Langmuir Blodgett route and suitably treated to obtain reduced graphene oxide (RGO) monolayers were studied by photoelectron spectroscopy. Upon reduction of GO to form RGO C1s x-ray photoelectron spectra showed increase in graphitic carbon content, while ultraviolet photoelectron spectra showed increase in intensity corresponding to C2p-{pi} electrons ({approx}3.5 eV). X-ray excited Auger transitions C(KVV) and plasmon energy loss of C1s photoelectrons have been analyzed to elucidate the valence band structure. The effective number of ({pi}+{sigma}) electrons as obtained from energy loss spectra was found to increase by {approx}28% on reduction of GO.

  12. POLING EFFECT ON PIEZOELECTRIC BEHAVIOR OF PZT CERAMICS

    E-Print Network [OSTI]

    Chiang, Shu-Sheng

    2011-01-01

    Solution Series Lead Titanate - Lead Zirconate Lead Oxide:Tin Oxide and Lead Titanate - Lead Hafnate," J. Res. Nat.Lead Titanate Piezoelectric Ceramics \\vith Iron Oxide

  13. THE ROLE OF ACTIVE ELEMENTS AND OXIDE DISPERSIONS IN THE DEVELOPMENT OF OXIDATION-RESISTANT ALLOYS AND COATINGS

    E-Print Network [OSTI]

    Allam, I.M.

    2010-01-01

    rate, and sec- ondly this oxide layer must remain adherentFormation of a compound oxide layer (11) between scale andof Y- or Hf-rich compound oxide layers at the oxide/alloy

  14. Luminescence-Based Spectroelectrochemical Sensor for [Tc(dmpe)3]2+/+ (dmpe = 1,2-bis(dimethylphosphino)ethane) within a Charge-Selective Polymer Film

    SciTech Connect (OSTI)

    Chatterjee, Sayandev; Del Negro, Andrew S.; Edwards, Matthew K.; Bryan, Samuel A.; Kaval, Necati; Pantelic, Nebojsa; Morris, Laura K.; Heineman, W. R.; Seliskar, Carl J.

    2011-03-01

    A spectroelectrochemical sensor consisting of an indium tin oxide (ITO) optically transparent electrode (OTE) coated with a thin film of sulfonated polystyrene-blockpoly(ethylene-ran-butylene)-block-polystyrene (SSEBS) was developed for [Tc(dmpe)3]+.. [Tc(dmpe)3]+ preconcentrated by ion-exchange into the SSEBS film after 20 min exposure to aqueous [Tc(dmpe)3]+ solution, resulting in a 14-fold increase in cathodic peak current compared to a bare OTE. Colorless [Tc(dmpe)3]+ was reversibly oxidized to colored [Tc(dmpe)3]2+ by cyclic voltammetry. Detection of [Tc(dmpe)3]2+ was accomplished by electrochemically cycling the complex between non-emissive [Tc(dmpe)3]+ and emissive [Tc(dmpe)3]2+ and monitoring the modulated emission (?exc = 532 nm; ?em = 660 nm). The sensor gave a linear response over the range of 0.16 to 340.0 µM.

  15. A compact plasmonic MOS-based 2x2 electro-optic switch

    E-Print Network [OSTI]

    Ye, Chenran; Soref, Richard A; Sorger, Volker J

    2015-01-01

    We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, Indium-Tin-Oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 dB (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with Siliconon- Insulator platforms to for low-cost manufacturing.

  16. Catalytic oxidizers and Title V requirements

    SciTech Connect (OSTI)

    Uberoi, M.; Rach, S.E.

    1999-07-01

    Catalytic oxidizers have been used to reduce VOC emissions from various industries including printing, chemical, paint, coatings, etc. A catalytic oxidizer uses a catalyst to reduce the operating temperature for combustion to approximately 600 F, which is substantially lower than thermal oxidation unit. Title V requirements have renewed the debate on the best methods to assure compliance of catalytic oxidizers, with some suggesting the need for continuous emission monitoring equipment. This paper will discuss the various aspects of catalytic oxidation and consider options such as monitoring inlet/outlet temperatures, delta T across the catalyst, periodic laboratory testing of catalyst samples, and preventive maintenance procedures as means of assuring continuous compliance.

  17. THE ROLE OF ACTIVE ELEMENTS AND OXIDE DISPERSIONS IN THE DEVELOPMENT OF OXIDATION-RESISTANT ALLOYS AND COATINGS

    E-Print Network [OSTI]

    Allam, I.M.

    2010-01-01

    of the oxide and alloy and these lead to spallation of theleads to a uniform distribution of fine internal oxide

  18. Coal combustion by wet oxidation

    SciTech Connect (OSTI)

    Bettinger, J.A.; Lamparter, R.A.; McDowell, D.C.

    1980-11-15

    The combustion of coal by wet oxidation was studied by the Center for Waste Management Programs, of Michigan Technological University. In wet oxidation a combustible material, such as coal, is reacted with oxygen in the presence of liquid water. The reaction is typically carried out in the range of 204/sup 0/C (400/sup 0/F) to 353/sup 0/C (650/sup 0/F) with sufficient pressure to maintain the water present in the liquid state, and provide the partial pressure of oxygen in the gas phase necessary to carry out the reaction. Experimental studies to explore the key reaction parameters of temperature, time, oxidant, catalyst, coal type, and mesh size were conducted by running batch tests in a one-gallon stirred autoclave. The factors exhibiting the greatest effect on the extent of reaction were temperature and residence time. The effect of temperature was studied from 204/sup 0/C (400/sup 0/F) to 260/sup 0/C (500/sup 0/F) with a residence time from 600 to 3600 seconds. From this data, the reaction activation energy of 2.7 x 10/sup 4/ calories per mole was determined for a high-volatile-A-Bituminous type coal. The reaction rate constant may be determined at any temperature from the activation energy using the Arrhenius equation. Additional data were generated on the effect of mesh size and different coal types. A sample of peat was also tested. Two catalysts were evaluated, and their effects on reaction rate presented in the report. In addition to the high temperature combustion, low temperature desulfurization is discussed. Desulfurization can improve low grade coal to be used in conventional combustion methods. It was found that 90% of the sulfur can be removed from the coal by wet oxidation with the carbon untouched. Further desulfurization studies are indicated.

  19. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (PMMA) resist with electron-beam lithography, followed by selective metal electroplating into the resist template. This approach is advantageous for low-melting-temperatur...

  20. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of Waterloo, California...

  1. Indium Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:on Openei |sourceAnd Central Mississippi | Open

  2. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion Measurement of Muon Neutrino andMechanical Behavior

  3. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion Measurement of Muon Neutrino andMechanical

  4. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1

  5. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical Behavior of

  6. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical Behavior

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical BehaviorMechanical

  8. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical

  9. Thin film cadmium telluride and zinc phosphide solar cells

    SciTech Connect (OSTI)

    Chu, T.

    1984-10-01

    This report describes research performed from June 1982 to October 1983 on the deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films have been prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMl efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrates by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10/sup 6/ ohm-cm, and this resistivity may be reduced to about 5 x 10/sup 4/ ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films were deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts were directed to the deposition of low-resistivity zinc selenide in order to prepare ZnSe/An/sub 3/P/sub 2/ heterojunction thin-film solar cells. However, zinc selenide films deposited by vacuum evaporation and chemical vapor deposition techniques were all of high resistivity.

  10. This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research

    E-Print Network [OSTI]

    Cao, Guozhong

    @uw.edu (G. Cao). Nano Energy (2013) 2, 769­778 #12;Author's personal copy supercapacitors [1­6], fuel cells to the deposition of tin oxide nanoparticles. As a result, carbon cryogel­tin oxide nanocomposites with optimized

  11. Final Technical Report CONDUCTIVE COATINGS FOR SOLAR CELLS USING CARBON NANOTUBES

    SciTech Connect (OSTI)

    Paul J Glatkowski; Jorma Peltola; Christopher Weeks; Mike Trottier; David Britz

    2007-09-30

    US Department of Energy (DOE) awarded a grant for Eikos Inc. to investigate the feasibility of developing and utilizing Transparent Conducting Coatings (TCCs) based on carbon nanotubes (CNT) for solar cell applications. Conventional solar cells today employ metal oxide based TCCs with both Electrical Resistivity (R) and Optical Transparency (T), commonly referred to as optoelectronic (RT) performance significantly higher than with those possible with CNT based TCCs available today. Transparent metal oxide based coatings are also inherently brittle requiring high temperature in vacuum processing and are thus expensive to manufacture. One such material is indium tin oxide (ITO). Global demand for indium has recently increased rapidly while supply has diminished causing substantial spikes in raw material cost and availability. In contrast, the raw material, carbon, needed for CNT fabrication is abundantly available. Transparent Conducting Coatings based on CNTs can overcome not only cost and availability constraints while also offering the ability to be applied by existing, low cost process technologies under ambient conditions. Processes thus can readily be designed both for rigid and flexible PV technology platforms based on mature spray or dip coatings for silicon based solar cells and continuous roll to roll coating processes for polymer solar applications.

  12. Poly(ethylene oxide) functionalization

    DOE Patents [OSTI]

    Pratt, Russell Clayton

    2014-04-08

    A simple procedure is provided by which the hydroxyl termini of poly(ethylene oxide) can be appended with functional groups to a useful extent by reaction and precipitation. The polymer is dissolved in warmed toluene, treated with an excess of organic base and somewhat less of an excess of a reactive acylating reagent, reacted for several hours, then precipitated in isopropanol so that the product can be isolated as a solid, and salt byproducts are washed away. This procedure enables functionalization of the polymer while not requiring laborious purification steps such as solvent-solvent extraction or dialysis to remove undesirable side products.

  13. Metal oxide composite dosimeter method and material

    DOE Patents [OSTI]

    Miller, Steven D. (Richland, WA)

    1998-01-01

    The present invention is a method of measuring a radiation dose wherein a radiation responsive material consisting essentially of metal oxide is first exposed to ionizing radiation. The metal oxide is then stimulating with light thereby causing the radiation responsive material to photoluminesce. Photons emitted from the metal oxide as a result of photoluminescence may be counted to provide a measure of the ionizing radiation.

  14. Predicting the radiation tolerance of oxides

    SciTech Connect (OSTI)

    Sickafus, K. (Kurt E.); Grimes, R. W. (Robin W.)

    2001-01-01

    We have used atomistic computer simulations and ion beam irradiations to examine radiation damage accumulation in multicomponent oxides, We have developed contour energy maps via computer simulations to predict the effects of oxide structure and chemical composition on radiation-induced atomic disorder, defect migration, and swelling. Ion irradiation damage experiments have been perfonned on, pyrochlore and fluorite-structured oxide ceramics to test the predictions from computer models.

  15. Solid-oxide fuel cell electrolyte

    DOE Patents [OSTI]

    Bloom, Ira D. (Bolingbrook, IL); Hash, Mark C. (Joliet, IL); Krumpelt, Michael (Naperville, IL)

    1993-01-01

    A solid-oxide electrolyte operable at between 600.degree. C. and 800.degree. C. and a method of producing the solid-oxide electrolyte are provided. The solid-oxide electrolyte comprises a combination of a compound having weak metal-oxygen interactions with a compound having stronger metal-oxygen interactions whereby the resulting combination has both strong and weak metal-oxygen interaction properties.

  16. Kinetics and Mechanism of Oxidative Dehydrogenation of Propane on Vanadium, Molybdenum, and Tungsten Oxides

    E-Print Network [OSTI]

    Iglesia, Enrique

    Kinetics and Mechanism of Oxidative Dehydrogenation of Propane on Vanadium, Molybdenum catalysts confirmed that oxidative dehydrogenation of propane occurs via similar pathways, which involve for propane dehydrogenation and for propene combustion increase in the sequence VOx/ZrO2

  17. Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications

    E-Print Network [OSTI]

    Nicholas, Jason.D.

    2007-01-01

    Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.Tubular Solid Oxide Fuel Cell Technology, U.S. Department ofare provided to the fuel cell, electrons are constantly

  18. EIA - Greenhouse Gas Emissions - Nitrous Oxide Emissions

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    U.S. nitrous oxide emissions include agriculture, energy use, industrial processes, and waste management (Figure 22). The largest source is agriculture (73 percent), and the...

  19. Selective deposition of nanostructured ruthenium oxide using...

    Office of Scientific and Technical Information (OSTI)

    Selective deposition of nanostructured ruthenium oxide using Tobacco mosaic virus for micro-supercapacitors in solid Nafion electrolyte Citation Details In-Document Search Title:...

  20. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, B.K.

    1991-12-17

    Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  1. Double perovskite catalysts for oxidative coupling

    DOE Patents [OSTI]

    Campbell, Kenneth D. (Charleston, WV)

    1991-01-01

    Alkali metal doped double perovskites containing manganese and at least one of cobalt, iron and nickel are useful in the oxidative coupling of alkane to higher hydrocarbons.

  2. Siderite, oxidation, and neutralization potential determination 

    E-Print Network [OSTI]

    Porter, Elizabeth Brooke

    2001-01-01

    in the soil. However, dissolution of minerals other than FeCO? may increase NP if 0.5 M HCl is for digestion before oxidation....

  3. Lanthanide doped barium phosphorous oxide scintillators

    DOE Patents [OSTI]

    Borade, Ramesh B; Bourret-Courchesne, Edith; Denzo, Stephen E

    2013-02-26

    The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped barium phosphorous oxide useful for detecting nuclear material.

  4. Photochemical Water Oxidation by Crystalline Polymorphs of Manganese Oxides: Structural Requirements for Catalysis

    E-Print Network [OSTI]

    Garfunkel, Eric

    potential (1.23 V vs SHE). Commercial water electrolyzers are typically limited by the oxidation reaction

  5. Tape casting of magnesium oxide.

    SciTech Connect (OSTI)

    Ayala, Alicia; Corral, Erica L.; Loehman, Ronald E.; Bencoe, Denise Nora; Reiterer, Markus; Shah, Raja A.

    2008-02-01

    A tape casting procedure for fabricating ceramic magnesium oxide tapes has been developed as a method to produce flat sheets of sintered MgO that are thin and porous. Thickness of single layer tapes is in the range of 200-400 {micro}m with corresponding surface roughness values in the range of 10-20 {micro}m as measured by laser profilometry. Development of the tape casting technique required optimization of pretreatment for the starting magnesium oxide (MgO) powder as well as a detailed study of the casting slurry preparation and subsequent heat treatments for sintering and final tape flattening. Milling time of the ceramic powder, plasticizer, and binder mixture was identified as a primary factor affecting surface morphology of the tapes. In general, longer milling times resulted in green tapes with a noticeably smoother surface. This work demonstrates that meticulous control of the entire tape casting operation is necessary to obtain high-quality MgO tapes.

  6. Quantitative room-temperature mineralization of airborne formaldehyde using manganese oxide catalysts

    E-Print Network [OSTI]

    Sidheswaran, Meera A.

    2012-01-01

    temperature thermo-catalytic oxidation reactor. Proceedingsarea. Room temperature catalytic oxidation of airborneand their catalytic activity for formaldehyde oxidation.

  7. The oxidative dehydrogenation of ethane with nitrous oxide by molybdenum oxide supported on silica gel 

    E-Print Network [OSTI]

    Yang, Tsong-Jen

    1979-01-01

    or indirectly from 02, thus tne difference between the two oxidants becomes less sig- nificant. Both rates of formation for C2H4 and C0 were enhanced in the presence of a very small amount of oxygen in the mixture of C2B& and N 0. A radical mechanism... process because of the large and expanding demand for alkenes and dialkenes which are used in the manufacture of various chemical prod- ucts such as detergents, plastics, synthetic rubber, anc high octane gasoline. One example of this type of reaction...

  8. Polysaccharide Nanocomposites Reinforced with Graphene Oxide and Keratin-Grafted Graphene Oxide

    E-Print Network [OSTI]

    Polysaccharide Nanocomposites Reinforced with Graphene Oxide and Keratin-Grafted Graphene Oxide, chitosan-starch, and carboxymethyl cellulose-starch reinforced with graphene oxide and graphene grafted with keratin were developed. Composites films had been prepared for the casting/solvent evaporation method

  9. Comparison of a thermospheric photochemical model with Student Nitric Oxide Explorer (SNOE) observations of nitric oxide

    E-Print Network [OSTI]

    Bailey, Scott

    and of time. There are two principal energy sources that lead to the production of nitric oxideComparison of a thermospheric photochemical model with Student Nitric Oxide Explorer (SNOE) observations of nitric oxide C. A. Barth Laboratory for Atmospheric and Space Physics, University of Colorado

  10. Book: Aging and Oxidants in Animals and Plants Aging and oxidants in the nematode Caenorhabditis elegans

    E-Print Network [OSTI]

    Gems, David

    Book: Aging and Oxidants in Animals and Plants Aging and oxidants in the nematode Caenorhabditis;1.1 Testing the oxidative damage theory of aging in C. elegans The biology of aging remains poorly understood. For example, it remains unclear what sort of biological processes are the primary determinants of aging

  11. Fundamentals of Mercury Oxidation in Flue Gas

    SciTech Connect (OSTI)

    JoAnn Lighty; Geoffrey Silcox; Constance Senior; Joseph Helble; Balaji Krishnakumar

    2008-07-31

    The objective of this project was to understand the importance of and the contribution of gas-phase and solid-phase coal constituents in the mercury oxidation reactions. The project involved both experimental and modeling efforts. The team was comprised of the University of Utah, Reaction Engineering International, and the University of Connecticut. The objective was to determine the experimental parameters of importance in the homogeneous and heterogeneous oxidation reactions; validate models; and, improve existing models. Parameters studied include HCl, NO{sub x}, and SO{sub 2} concentrations, ash constituents, and temperature. The results suggested that homogeneous mercury oxidation is below 10% which is not consistent with previous data of others and work which was completed early in this research program. Previous data showed oxidation above 10% and up to 100%. However, the previous data are suspect due to apparent oxidation occurring within the sampling system where hypochlorite ion forms in the KCl impinger, which in turn oxidized mercury. Initial tests with entrained iron oxide particles injected into a flame reactor suggest that iron present on fly ash particle surfaces can promote heterogeneous oxidation of mercury in the presence of HCl under entrained flow conditions. Using the data generated above, with homogeneous reactions accounting for less than 10% of the oxidation, comparisons were made to pilot- and full-scale data. The results suggest that heterogeneous reactions, as with the case of iron oxide, and adsorption on solid carbon must be taking place in the full-scale system. Modeling of mercury oxidation using parameters from the literature was conducted to further study the contribution of homogeneous pathways to Hg oxidation in coal combustion systems. Calculations from the literature used rate parameters developed in different studies, in some cases using transition state theory with a range of approaches and basis sets, and in other cases using empirical approaches. To address this, rate constants for the entire 8-step homogeneous Hg oxidation sequence were developed using an internally consistent transition state approach. These rate constants when combined with the appropriate sub-mechanisms produced lower estimates of the overall extent of homogeneous oxidation, further suggesting that heterogeneous pathways play an important role in Hg oxidation in coal-fired systems.

  12. Measurement of the x-ray mass attenuation coefficient and determination of the imaginary component of the atomic form factor of tin over the energy range of 29-60 keV

    SciTech Connect (OSTI)

    Jonge, Martin D. de; Tran, Chanh Q.; Chantler, Christopher T.; Barnea, Zwi; Dhal, Bipin B.; Paterson, David; Kanter, Elliot P.; Southworth, Stephen H.; Young, Linda; Beno, Mark A.; Linton, Jennifer A.; Jennings, Guy [X-Ray Operations and Research, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); School of Physics, University of Melbourne, Victoria 3010 (Australia); Australian Synchrotron Project, Major Projects Victoria, 800 Blackburn Road, Clayton, Victoria 3168 (Australia); Chemistry Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); BESSRC-CAT, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)

    2007-03-15

    We use the x-ray extended-range technique (XERT) [C. T. Chantler et al., Phys. Rev. A 64, 062506 (2001)] to measure the mass attenuation coefficients of tin in the x-ray energy range of 29-60 keV to 0.04-3 % accuracy, and typically in the range 0.1-0.2 %. Measurements made over an extended range of the measurement parameter space are critically examined to identify, quantify, and correct a number of potential experimental systematic errors. These results represent the most extensive experimental data set for tin and include absolute mass attenuation coefficients in the regions of x-ray absorption fine structure, extended x-ray absorption fine structure, and x-ray absorption near-edge structure. The imaginary component of the atomic form factor f{sub 2} is derived from the photoelectric absorption after subtracting calculated Rayleigh and Compton scattering cross sections from the total attenuation. Comparison of the result with tabulations of calculated photoelectric absorption coefficients indicates that differences of 1-2 % persist between calculated and observed values.

  13. Sulfur oxide adsorbents and emissions control

    DOE Patents [OSTI]

    Li, Liyu (Richland, WA); King, David L. (Richland, WA)

    2006-12-26

    High capacity sulfur oxide absorbents utilizing manganese-based octahedral molecular sieve (Mn--OMS) materials are disclosed. An emissions reduction system for a combustion exhaust includes a scrubber 24 containing these high capacity sulfur oxide absorbents located upstream from a NOX filter 26 or particulate trap.

  14. Plutonium Oxide Process Capability Work Plan

    SciTech Connect (OSTI)

    Meier, David E.; Tingey, Joel M.

    2014-02-28

    Pacific Northwest National Laboratory (PNNL) has been tasked to develop a Pilot-scale Plutonium-oxide Processing Unit (P3U) providing a flexible capability to produce 200g (Pu basis) samples of plutonium oxide using different chemical processes for use in identifying and validating nuclear forensics signatures associated with plutonium production. Materials produced can also be used as exercise and reference materials.

  15. NEMI MEASUREMENT OF AURORAL NITRIC OXIDE PRODUCTION

    E-Print Network [OSTI]

    Ulich, Thomas

    NEMI MEASUREMENT OF AURORAL NITRIC OXIDE PRODUCTION Carl-Fredrik Enell1 Esa Turunen1 Antti Kero1 measurements for a sodium emission experiment. The main purpose of SGO in the NEMI project is in-situ quantification of the auroral production of nitric oxide (NO). The retrieval requires inverse modelling

  16. Nanocomposite of graphene and metal oxide materials

    DOE Patents [OSTI]

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2012-09-04

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

  17. Nanocomposite of graphene and metal oxide materials

    DOE Patents [OSTI]

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2013-10-15

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10 C.

  18. Ammonia release method for depositing metal oxides

    DOE Patents [OSTI]

    Silver, G.L.; Martin, F.S.

    1994-12-13

    A method is described for depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates. 1 figure.

  19. Ammonia release method for depositing metal oxides

    DOE Patents [OSTI]

    Silver, Gary L. (Centerville, OH); Martin, Frank S. (Farmersville, OH)

    1994-12-13

    A method of depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates.

  20. Packaging and Transportation of Additional Neptunium Oxide

    SciTech Connect (OSTI)

    Watkins, R.; Jordan, J.; Hensel, S.

    2010-05-05

    The Savannah River Site's HB-Line Facility completed a second neptunium oxide production campaign in which nine (9) additional cans of neptunium oxide were produced and shipped to the Idaho National Laboratory and Oak Ridge National Laboratory in the 9975 shipping container. These additional cans were from a different feed solution than the first fifty (50) cans of neptunium oxide that were previously produced and shipped via a Letter of Amendment to the 9975 Safety Analysis Report for Packaging (SARP) content table. This paper will address the challenges associated with demonstrating the neptunium oxide produced from the additional feed solution was equivalent to the original neptunium oxide and within the content description of the Letter of Amendment.

  1. Electro-deposition of superconductor oxide films

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO)

    2001-01-01

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  2. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    using this beamline were able to chart the rate of oxidation of silicon in the gate oxide layer for the first time. Understanding the rate of oxidation in this crucial layer...

  3. Regular paper Search for intermediates of photosynthetic water oxidation

    E-Print Network [OSTI]

    Junge, Wolfgang

    II of cyanobacteria and plants incorporates the catalytic centre of water oxidation. PoweredRegular paper Search for intermediates of photosynthetic water oxidation Juergen Clausen & Wolfgang Key words: intermediate, photosynthesis, Photosystem II, S-state, water oxidation Abstract Photosystem

  4. THE STRUCTURE OF ULTRA-THIN OXIDE ON SILICON

    E-Print Network [OSTI]

    Krivanek, Ondrej L.

    2012-01-01

    Ultra-thin (10-lOOA) silicon oxide layers on silicon are ofcrystalline silicon. The oxide layer is seen to be sharplyundulation of the whole oxide layer with ~300A wavelength.

  5. Physiology and Diversity of Ammonia-Oxidizing Archaea

    E-Print Network [OSTI]

    de la Torre, José R.

    -oxidizing archaea (AOA), now generally recog- nized to exert primary control over ammonia oxidation in terrestrial, the unusually high affinity of marine and terrestrial AOA for ammonia indicates that this group may determine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 Kinetics and Stoichiometry of Ammonia Oxidation

  6. Oxidized film structure and method of making epitaxial metal oxide structure

    DOE Patents [OSTI]

    Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

    2003-02-25

    A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

  7. Catalytic oxidation of hydrocarbons and alcohols by carbon dioxide on oxide catalysts

    SciTech Connect (OSTI)

    Krylov, O.V. . N.N. Semenov Inst. of Chemical Physics); Mamedov, A.Kh.; Mirzabekova, S.R. . Yu.G. Mamedaliev Inst. of Petrochemical Processes)

    1995-02-01

    The great interest displayed lately in heterogeneous catalytic reactions of carbon dioxide is caused by two reasons: (1) the necessity to fight the greenhouse effect and (2) the exhaust of carbon raw material sources. Reactions of oxidative transformation of organic compounds of different classes (alkanes, alkenes, and alcohols) with a nontraditional oxidant, carbon dioxide, were studied on oxide catalysts Fe-O, Cr-O, Mn-O and on multicomponent systems based on manganese oxide. The supported manganese oxide catalysts are active, selective, and stable in conversion of the CH[sub 4] + CO[sub 2] mixture into synthesis gas and in oxidative dehydrogenation of C[sub 2] [minus] C[sub 7] hydrocarbons and the lower alcohols. Unlike metal catalysts manganese oxide based catalysts do not form a carbon layer during the reaction.

  8. Diesel Particulate Oxidation Model: Combined Effects of Fixed...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Oxidation Model: Combined Effects of Fixed & Volatile Carbon Diesel Particulate Oxidation Model: Combined Effects of Fixed & Volatile Carbon Poster presented at the 16th Directions...

  9. Low-Temperature Hydrocarbon/CO Oxidation Catalysis in Support...

    Energy Savers [EERE]

    HydrocarbonCO Oxidation Catalysis in Support of HCCI Emission Control Low-Temperature HydrocarbonCO Oxidation Catalysis in Support of HCCI Emission Control Presentation from the...

  10. Water oxidation using a cobalt monolayer prepared by underpotential...

    Office of Scientific and Technical Information (OSTI)

    Water oxidation using a cobalt monolayer prepared by underpotential deposition Citation Details In-Document Search Title: Water oxidation using a cobalt monolayer prepared by...

  11. Effects of Diesel Exhaust Emissions on Soot Oxidation and DPF...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Diesel Exhaust Emissions on Soot Oxidation and DPF Regeneration Effects of Diesel Exhaust Emissions on Soot Oxidation and DPF Regeneration DPF regeneration experiments verified the...

  12. Microbial-mediated method for metal oxide nanoparticle formation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Search Title: Microbial-mediated method for metal oxide nanoparticle formation The invention is directed to a method for producing metal oxide nanoparticles, the method...

  13. Nanocomposite of graphene and metal oxide materials | OSTI, US...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanocomposite of graphene and metal oxide materials Re-direct Destination: Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The...

  14. Monolithic Metal Oxide based Composite Nanowire Lean NOx Emission...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Monolithic Metal Oxide based Composite Nanowire Lean NOx Emission Control Catalysts Monolithic Metal Oxide based Composite Nanowire Lean NOx Emission Control Catalysts Presents...

  15. Mesoporous Manganese Oxide Nanowires for High-Capacity, High...

    Office of Scientific and Technical Information (OSTI)

    Mesoporous Manganese Oxide Nanowires for High-Capacity, High-Rate, Hybrid Electrical Energy Storage Citation Details In-Document Search Title: Mesoporous Manganese Oxide Nanowires...

  16. 2011 Final Report - Nano-Oxide Photocatalysis for Solar Energy...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: 2011 Final Report - Nano-Oxide Photocatalysis for Solar Energy Conversion Citation Details In-Document Search Title: 2011 Final Report - Nano-Oxide Photocatalysis...

  17. High surface area, electrically conductive nanocarbon-supported metal oxide

    DOE Patents [OSTI]

    Worsley, Marcus A; Han, Thomas Yong-Jin; Kuntz, Joshua D; Cervanted, Octavio; Gash, Alexander E; Baumann, Theodore F; Satcher, Jr., Joe H

    2014-03-04

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

  18. Metal Oxide Semiconductor Nanoparticles Open the Door to New...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Metal Oxide Semiconductor Nanoparticles Open the Door to New Medical Innovations Technology available for licensing: novel nanometer-sized metal oxide semiconductors that allow...

  19. Nanocrystalline cerium oxide materials for solid fuel cell systems

    SciTech Connect (OSTI)

    Brinkman, Kyle S

    2015-05-05

    Disclosed are solid fuel cells, including solid oxide fuel cells and PEM fuel cells that include nanocrystalline cerium oxide materials as a component of the fuel cells. A solid oxide fuel cell can include nanocrystalline cerium oxide as a cathode component and microcrystalline cerium oxide as an electrolyte component, which can prevent mechanical failure and interdiffusion common in other fuel cells. A solid oxide fuel cell can also include nanocrystalline cerium oxide in the anode. A PEM fuel cell can include cerium oxide as a catalyst support in the cathode and optionally also in the anode.

  20. National Energy Technology Laboratory Publishes Solid Oxide Fuel...

    Broader source: Energy.gov (indexed) [DOE]

    Publishes Solid Oxide Fuel Cell Studies What does this project do? For more information on DOE's efforts to make solid oxide fuel cells an efficient and economically compelling...