National Library of Energy BETA

Sample records for indium gallium selenium

  1. Copper Indium Gallium Diselenide

    Broader source: Energy.gov [DOE]

    DOE supports innovative research focused on overcoming the current technological and commercial barreirs for copper indium gallium diselenide [Cu(InxGa1-x)Se2], or CIGS, solar cells. A list of...

  2. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  3. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  4. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  5. Hydrogenation of palladium rich compounds of aluminium, gallium and indium

    SciTech Connect (OSTI)

    Kohlmann, H.

    2010-02-15

    Palladium rich intermetallic compounds of aluminium, gallium and indium have been studied before and after hydrogenation by powder X-ray diffraction and during hydrogenation by in situ thermal analysis (DSC) at hydrogen gas pressures up to 39 MPa and temperatures up to 700 K. Very weak DSC signals and small unit cell increases of below 1% for AlPd{sub 2}, AlPd{sub 3}, GaPd{sub 2}, Ga{sub 5}Pd{sub 13}, In{sub 3}Pd{sub 5}, and InPd{sub 2} suggest negligible hydrogen uptake. In contrast, for both tetragonal modifications of InPd{sub 3} (ZrAl{sub 3} and TiAl{sub 3} type), heating to 523 K at 2 MPa hydrogen pressure leads to a rearrangement of the intermetallic structure to a cubic AuCu{sub 3} type with an increase in unit cell volume per formula unit by 3.6-3.9%. Gravimetric analysis suggests a composition InPd{sub 3}H{sub a}pprox{sub 0.8} for the hydrogenation product. Very similar behaviour is found for the deuteration of InPd{sub 3}. - Graphical abstract: In situ differential scanning calorimetry of the hydrogenation of tetragonal InPd{sub 3} (ZrAl{sub 3} type) at 1.3 MPa hydrogen pressure.

  6. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  7. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  8. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

    E-Print Network [OSTI]

    Rogers, John A.

    -state lighting Hoon-sik Kima,1 , Eric Bruecknerb,1 , Jizhou Songc,1 , Yuhang Lid,e , Seok Kima , Chaofeng Lud with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements this materials technology into light- ing modules that manage light conversion, extraction, and distri- bution

  9. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A conversion efficiency of solar cells made from this material [1]. One of the special qualities of the CIGS improve the solar cell performance. In many of the different CIGS fabrication techniques, an in depth

  10. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    DOE Patents [OSTI]

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  11. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  12. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  13. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect (OSTI)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm˛ with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  14. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  15. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  16. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  17. Gallium and indium imaging agents. 2. Complexes of sulfonated catecholyamide sequestering agents

    SciTech Connect (OSTI)

    Pecoraro, V.L.; Wong, G.B.; Raymond, K.N.

    1982-06-01

    The solution equilibria for the reaction of Ga(III) and In(III) with the hexadentate ligands N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,3,5-tris(aminomethyl)benzene (MECAMS) and N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,5,10-triazadecane (3,4-LICAMS) and the bidentate catechol N,N-dimethyl-2,3-dihydroxy-5-sulfonatobenzamide (DMBS) have been determined on 0.1 M KNO/sub 3/ at 25/sup 0/C. Both Ga(III) and In(III) are coordinated by three catecholate groups at high pH and have formation constants of the order ..beta../sub 110/ = 10/sup 38/ M/sup -1/. As the acidity of the medium is increased, the metal complexes of the hexadentate sequestering agents undergo protonation reactions. For the determination of the nature of the protonated metal chelates, the stretching frequency of the amide carbonyl has been monitored in D/sub 2/O by Fourier transform infrared spectroscopy (FT IR). These data support a series of two one-proton steps to form a mixed salicylate-catecholate coordination about the metal ion. In the salicylate bonding mode the metal is bound through the ortho phenolic oxygen and the amide cabonyl whereas catecholate coordination is via the adjacent phenols. In contrast, protonation of the M/sup III/(DMBS)/sub 3/ complexes results in dissociation of a catechol moiety to form M/sup III/(DMBS)/sub 2/. The potential use of these compounds as tumor-imaging agents in cancer diagnosis is discussed, with specific attention to the role of the gallium transferrin complex.

  18. Effects of low-temperature (120?°C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect (OSTI)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120?°C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  19. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect (OSTI)

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2?V is ?10{sup 9} ? for a device with the radius of 50??m) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2?V is ?10{sup 3} ? for the radius of 50??m) by applying a voltage pulse (e.g., 10?V/1??s). The WORM device has good data-retention and reading-endurance capabilities.

  20. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect (OSTI)

    Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100?°C. The a-IGZO TFT exhibit a mobility of 5.13?cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4?mm (strain?=?1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10?V for 1500?s. Thus, this technology is suitable for use in flexible displays.

  1. [Type here] Copper Indium Selenide (CIS) Solar Cell

    E-Print Network [OSTI]

    Hochberg, Michael

    [Type here] Copper Indium Selenide (CIS) Solar Cell CIS cells are made with a thin layer of CuInSe2) Solar Cell CIGs cells are made with a thin layer of copper indium gallium diselenide Cu(In, Ga)Se2 (CIGS). CIGS cells have up to 10% efficiency with similar durability as silicon solar cells. Since

  2. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing

    E-Print Network [OSTI]

    gallium diselenide (CIGS) solar cells require approximately 50 metric tons of indium to produce 1 gigawatt of solar power. Research was underway to develop a low-cost manufacturing process for flexible CIGS solar cells that would yield high productio

  3. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Mechanical Behavior of Indium Nanostructures Print Wednesday, 26 May 2010 00:00 Indium is a key material in lead-free solder...

  4. Groundwater Quality and Groundwater Pollution

    E-Print Network [OSTI]

    Pasternack, Gregory B.

    bromide gallium magnesium strontium cadmium gold chromium indium cobalt lanthanum anions phosphate tin rubidium tungsten selenium ytterbium titanium yttrium uranium zirconium vanadium zinc #12;are

  5. Liquid precursor for deposition of indium selenide and method of preparing the same

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

    2015-09-22

    Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

  6. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended...

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Indium Under the Nanoscope In this work, Lee et al. investigated the small-scale plastic deformation of indium nanopillars, a previously unstudied material and crystal...

  8. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath (Littleton, CO)

    2007-11-20

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  9. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    DOE Patents [OSTI]

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  10. Sputtered Molybdenum Bilayer Back Contact for Copper Indium Diselenide-Based Polycrystalline Thin-Film Solar Cells

    E-Print Network [OSTI]

    Scofield, John H.

    -of-the-art polycrystalline copper indium gallium diselenide solar cells with good results. Thin Solid Films, 260 (1), pp. 26), have emerged as promising polycrystalline thin-film semiconductors for solar cell absorber layers.2 polycrystalline thin-film photovoltaic (PV) technology. 3 Solar cells fabricated at the National Renewable Energy

  11. Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles

    E-Print Network [OSTI]

    Hsieh, Jennifer Chia-Jen

    2010-01-01

    A low-temperature, ambient pressure solution synthesis of colloidal InN nanoparticles is presented. This synthesis utilizes a previously dismissed precursor and results in individual, non-aggregated nanoparticles with ...

  12. Potential effects of gallium on cladding materials

    SciTech Connect (OSTI)

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  13. GALLIUM--2001 29.1 By Deborah A. Kramer

    E-Print Network [OSTI]

    GALLIUM--2001 29.1 GALLIUM By Deborah A. Kramer Domestic survey data and tables were prepared, a significant consumer of gallium arsenide (GaAs)-based devices. As the gallium demand declined during 2001 capacity expansions, very few additional expansions were announced in 2001. Because gallium nitride (Ga

  14. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  15. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  16. Discovery of the Indium Isotopes

    E-Print Network [OSTI]

    S. Amos; M. Thoennessen

    2010-09-08

    Thirty-eight indium isotopes (A = 98-135) have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  17. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Presenter: Arpan Chakraborty, Soraa Inc. This...

  18. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, D.R.

    1993-04-20

    Methods are described for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72.

  19. INDIUM--2000 38.1 By Robert D. Brown, Jr.

    E-Print Network [OSTI]

    INDIUM--2000 38.1 INDIUM By Robert D. Brown, Jr. Domestic survey data and table were prepared by Carolyn F. Crews, statistical assistant. Indium production in the United States during 2000 was confined, were the major producers of indium metal and indium products in 2000. A number of smaller firms also

  20. INDIUM--1999 37.1 By Robert D. Brown

    E-Print Network [OSTI]

    INDIUM--1999 37.1 INDIUM By Robert D. Brown Domestic survey data and tables were prepared by Carolyn F. Crews, statistical assistant. Indium production in the United States during 1999 was confined, were the major producers of indium metal and indium products in 1999. A number of smaller firms also

  1. Generator for gallium-68 and compositions obtained therefrom

    DOE Patents [OSTI]

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

  2. Chemical factors influencing selenium atomization 

    E-Print Network [OSTI]

    Buren, Mary Sue

    1980-01-01

    Atomization. (August 1980) Mary Sue Buren, B, S. , Angelo State University Chairman of Advisory Comm1ttee: Dr. Thomas M. Vickrey Selenium in an acid1c matrix was analyzed using graphite furnace atom1c absorption with Zeeman-effect background correct1on.... Nickel(II} and lanthanum( III) were introduced as matrix modifiers to determine their effect on interferences 1n selenium atom1zation. In add1tion to matr1x mod1ficat1on, surface coating the graphite furnace with z1rconium and tantalum salts was also...

  3. Photoconductivity in reactively evaporated copper indium selenide thin films

    SciTech Connect (OSTI)

    Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

    2014-01-28

    Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

  4. Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system

    E-Print Network [OSTI]

    Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system Kangkang to their potential for novel spintronics applications such as spin light-emitting diodes[1] . Delta phase manganese slightly the Mn:Ga atom concentration. While many important spintronics properties, such as spin injection

  5. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowires via Chemical Vapor Transport

    E-Print Network [OSTI]

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-01-01

    6 Growth Rate (um/hr) Vapor Pressure (Torr) In2O3 Ga2O3 SnO2Rate (µm/hr) Metal Vapor Pressure (Torr) Crystalline phaseto the source metal vapor pressure. Initial experiments show

  6. Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy

    E-Print Network [OSTI]

    Choy, Henry Kwong Hin, 1974-

    2005-01-01

    For a long time, there has been a desire to extend the emission wavelength of GaAs-based quantum well lasers, with the aim of eventually replacing InP with GaAs as the substrate of choice for communication applications. ...

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical Behavior of Indium

  8. INDIUM--2001 37.1 By Robert D. Brown, Jr.

    E-Print Network [OSTI]

    INDIUM--2001 37.1 INDIUM By Robert D. Brown, Jr. Domestic survey data and tables were prepared in New York and Rhode Island, were the major producers of indium metal and indium products in 2001 products. Domestic consumption in 2001 was estimated by the U.S. Geological Survey to have increased

  9. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  10. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  11. Intermetallic Reaction of Indium and Silver in an Electroplating Process

    E-Print Network [OSTI]

    Wang, Pin J.; Kim, Jong S.; Lee, Chin C.

    2009-01-01

    Indium and Silver in an Electroplating Process PIN J. WANG,silver (Ag) during the electroplating process of indium overAg layer, followed by electroplating an In layer with a

  12. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  13. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, D.R.

    1994-12-06

    Methods and apparatus are described for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72. The invention provides apparatus which can be located at a site where arsenic-72 is used, for purposes such as PET imaging, to produce arsenic-72 as needed, since the half-life of arsenic-72 is very short. 2 figures.

  14. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

    DOE Patents [OSTI]

    Dhere, Neelkanth G.; Kadam, Ankur A.

    2009-12-15

    A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

  15. Laser photochemistry of gallium-containing compounds. [Trimethylgallium

    SciTech Connect (OSTI)

    Baughcum, S.L.; Oldenborg, R.C.

    1986-01-01

    The production of gas-phase gallium atoms in the photolysis of trimethylgallium has been investigated at 193 nm and at other laser wavelengths. Ground state (4 /sup 2/P/sup 0//sub 1/2) and metastable (4 /sup 2/P/sup 0//sub 3/2/) gallium atoms are detected using laser-induced fluorescence techniques. Our results indicate that gallium atoms continue to be produced at long times after the laser pulse. The observed dependence on photolysis laser fluence, trimethylgallium pressure, and buffer gas pressure are consistent with a mechanism in which highly excited gallium methyl radicals undergo unimolecular decomposition to produce gallium atoms. Since this process is observed to happen on the time scale of hundreds of microseconds, these results have important implications for studies of metal deposition and direct laser writing by laser photolysis of organometallic compounds. 31 refs., 5 figs.

  16. Effect of selenium and vitamin E on risk of prostate cancer and other cancers: The selenium and vitamin E cancer prevention trial (SELECT)

    E-Print Network [OSTI]

    2009-01-01

    PR, Albanes D. Selenium, vitamin E, and prostate cancer--Effect of Selenium and Vitamin E on Risk of Prostate CancerOther Cancers: The Selenium and Vitamin E Cancer Prevention

  17. High-resolution imaging of selenium in kidneys: a localized selenium pool associated with glutathione peroxidase 3

    SciTech Connect (OSTI)

    Malinouski, M.; Kehr, S.; Finney, L.; Vogt, S.; Carlson, B.A.; Seravalli, J.; Jin, R.; Handy, D.E.; Park, T.J.; Loscalzo, J.; Hatfield, D.L.; Gladyshev, V.N.

    2012-04-17

    Recent advances in quantitative methods and sensitive imaging techniques of trace elements provide opportunities to uncover and explain their biological roles. In particular, the distribution of selenium in tissues and cells under both physiological and pathological conditions remains unknown. In this work, we applied high-resolution synchrotron X-ray fluorescence microscopy (XFM) to map selenium distribution in mouse liver and kidney. Liver showed a uniform selenium distribution that was dependent on selenocysteine tRNA{sup [Ser]Sec} and dietary selenium. In contrast, kidney selenium had both uniformly distributed and highly localized components, the latter visualized as thin circular structures surrounding proximal tubules. Other parts of the kidney, such as glomeruli and distal tubules, only manifested the uniformly distributed selenium pattern that co-localized with sulfur. We found that proximal tubule selenium localized to the basement membrane. It was preserved in Selenoprotein P knockout mice, but was completely eliminated in glutathione peroxidase 3 (GPx3) knockout mice, indicating that this selenium represented GPx3. We further imaged kidneys of another model organism, the naked mole rat, which showed a diminished uniformly distributed selenium pool, but preserved the circular proximal tubule signal. We applied XFM to image selenium in mammalian tissues and identified a highly localized pool of this trace element at the basement membrane of kidneys that was associated with GPx3. XFM allowed us to define and explain the tissue topography of selenium in mammalian kidneys at submicron resolution.

  18. Reversible expansion of gallium-stabilized (delta)-plutonium

    SciTech Connect (OSTI)

    Wolfer, W G; Oudot, B; Baclet, N

    2006-02-27

    It is shown that the transient expansion of plutonium-gallium alloys observed both in the lattice parameter as well as in the dimension of a sample held at ambient temperature can be explained by assuming incipient precipitation of Pu{sub 3}Ga. However, this ordered {zeta}-phase is also subject to radiation-induced disordering. As a result, the gallium-stabilized {delta}-phase, being metastable at ambient temperature, is driven towards thermodynamic equilibrium by radiation-enhanced diffusion of gallium and at the same time reverted back to its metastable state by radiation-induced disordering. A steady state is reached in which only a modest fraction of the gallium present is arranged in ordered {zeta}-phase regions.

  19. (Data in metric tons, unless noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1995. Domestic indium

    E-Print Network [OSTI]

    from ores in the United States in 1995. Domestic indium production was derived from the upgrading producers of indium metal and indium products in 1995. Several firms produced high-purity indium shapes detectors, high-speed transistors, and high-efficiency photovoltaic devices. Estimated uses in 1995 were

  20. Liquid precursor inks for deposition of In--Se, Ga--Se and In--Ga--Se

    DOE Patents [OSTI]

    Curtis, Calvin J.; Hersh, Peter A.; Miedaner, Alexander; Habas, Susan; van Hest, Maikel; Ginley, David S.

    2015-08-11

    An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone.

  1. Generator for ionic gallium-68 based on column chromatography

    DOE Patents [OSTI]

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A physiologically acceptable solution of gallium-68 fluorides, having an activity of 0.1 to 50 millicuries per milliliter of solution is provided. The solution is obtained from a generator comprising germanium-68 hexafluoride bound to a column of an anion exchange resin which forms gallium-68 in situ by eluting the column with an acid solution to form a solution containing .sup.68 Ga-fluorides. The solution then is neutralized prior to administration.

  2. Sputtering of neutral and ionic indium clusters

    SciTech Connect (OSTI)

    Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

    1993-10-01

    Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident {approximately}4 keV Ar{sup +} ions. In the secondary neutral mass spectra, indium clusters as large as In{sub 32} were observed. In the secondary ion mass spectra, indium clusters up to In{sub 18}{sup +} were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be {minus}5.6 and {minus}4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions.

  3. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect (OSTI)

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8?×?10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0?×?10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

  4. What You Need to Know about Selenium

    E-Print Network [OSTI]

    Hopkins, William A.

    of crude oil; mining of coal, phosphate, copper, and uranium~ and irrigated agriculture. Because 3.8.2 Selenium as a Global Problem............................................................ 32 3 is a common by-product of several core economic activities: coal- fired generation of electricity; refining

  5. Selenium in Oklahoma ground water and soil

    SciTech Connect (OSTI)

    Atalay, A.; Vir Maggon, D.

    1991-03-30

    Selenium with a consumption of 2 liters per day (5). The objectives of this study are: (1) to determine the concentrations of Se in Oklahoma ground water and soil samples. (2) to map the geographical distribution of Se species in Oklahoma. (3) to relate groundwater depth, pH and geology with concentration of Se.

  6. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect (OSTI)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  7. Selenium Partitioning and Food-Chain Transfer at the Salton Sea

    E-Print Network [OSTI]

    Tobin, Jennifer Marie

    2011-01-01

    and R.A. Engberg. Environmental Chemistry of Selenium. NewWorld Examples. ” Environmental Chemistry of Selenium. Ed.and R.A. Engberg. Environmental Chemistry of Selenium. New

  8. The leaching characteristics of selenium from coal fly ashes

    SciTech Connect (OSTI)

    Wang, T.; Wang, J.; Burken, J.G.; Ban, H.; Ladwig, K.

    2007-11-15

    The leaching characteristics of selenium from several bituminous and subbituminous coal fly ashes under different pH conditions were investigated using batch methods. Results indicated that pH had a significant effect on selenium leaching from bituminous coal ash. The minimum selenium leaching occurred in the pH range between 3 and 4, while the maximum selenium leaching occurred at pH 12. The release of selenium from subbituminous coal ashes was very low for the entire experimental pH range, possibly due to the high content of calcium which can form hydration or precipitation products as a sink for selenium. The adsorption results for different selenium species indicated that Se(VI) was hardly adsorbable on either bituminous coal ashes or subbitumminous coal ashes at any pH. However, Se(I) was highly adsorbed by bituminous coal ashes under acidic pH conditions and was mostly removed by subbitumminous coal ashes across the entire pH range. This result suggests that the majority of selenium released from the tested fly ashes was Se(IV). A speciation-based model was developed to simulate the adsorption of Se(IV) on bituminous coal fly ash, and the pH-independent adsorption constants of HSeO{sup 3-} and SeO{sub 3}{sup 2-} were determined. The modeling approach is useful for understanding and predicting the release process of selenium from fly ash.

  9. Gallium based low-interaction anions

    DOE Patents [OSTI]

    King, Wayne A. (Santa Fe, NM); Kubas, Gregory J. (Santa Fe, NM)

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  10. Fabrication, structure and mechanical properties of indium nanopillars

    SciTech Connect (OSTI)

    Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2010-01-01

    Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

  11. Pyrolysis approach to the synthesis of gallium nitride nanorods Wei-Qiang Han and Alex Zettla)

    E-Print Network [OSTI]

    Zettl, Alex

    Pyrolysis approach to the synthesis of gallium nitride nanorods Wei-Qiang Han and Alex Zettla for publication 26 October 2001 Herein we describe a pyrolysis route to the synthesis of gallium nitride GaN nanorods. GaN nanorods have been grown by the pyrolysis of gallium dimethylamide and ferrocene under

  12. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOE Patents [OSTI]

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  13. Journal of Crystal Growth 310 (2008) 579583 Red shift in the photoluminescence of indium gallium arsenide nitride

    E-Print Network [OSTI]

    Hicks, Robert F.

    2008-01-01

    in multi-junction solar cells, and in long-wavelength solid- state lasers and detectors [2­4]. Nonetheless

  14. From Soil Aggregate to Watershed, from California's Central Valley to the Salton Sea - Agricultural Selenium Contamination across Ecosystems, Scales, and Disciplines

    E-Print Network [OSTI]

    Kausch, Matteo Francesco

    2013-01-01

    Bioremediation of selenium-contaminated sediments and water.1997a. Bioremediation of selenium in soil and water. SoilBioremediation of selenium-contaminated sediments and water.

  15. First results from the Soviet-American Gallium Experiment

    SciTech Connect (OSTI)

    Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Eroshkina, L.A.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Y.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zakharov, Y.; Zatsepin, G.T.; Zhandarov, V.I. . Inst. Yadernykh Issledovanij); Bowl

    1990-01-01

    The Soviet-American Gallium Experiment is the first experiment able to measure the dominant flux of low energy p-p solar neutrinos. Four extractions made during January to May 1990 from 30 tons of gallium have been counted and indicate that the flux is consistent with 0 SNU and is less than 72 SNU (68% CL) and less than 138 SNU (95% CL). This is to be compared with the flux of 132 SNU predicted by the Standard Solar Model. 10 refs., 4 figs., 1 tab.

  16. Ionic liquid-induced synthesis of selenium nanoparticles

    SciTech Connect (OSTI)

    Langi, Bhushan; Shah, Chetan; Singh, Krishankant; Chaskar, Atul; Kumar, Manmohan; Bajaj, Parma N.

    2010-06-15

    A simple wet chemical method has been used to synthesize selenium nanoparticles by the reaction of ionic liquid with sodium selenosulphate, a selenium precursor, in the presence of polyvinyl alcohol stabilizer, in aqueous medium. The method is capable of producing spherical selenium nanoparticles in the size range of 76-150 nm under ambient conditions. This is a first report on the production of nano-selenium assisted by an ionic liquid. The synthesized nanoparticles can be separated easily from the aqueous sol by a high-speed centrifuge machine, and can be re-dispersed in an aqueous medium. The synthesized selenium nanoparticles have been characterized by X-ray diffraction, energy dispersive X-ray analysis, differential scanning calorimetry and transmission electron microscopy techniques.

  17. Synthesis, characterization, and exciton dynamics of II-VI semiconducting nanomaterials and ab-initio studies for applications in explosives sensing

    E-Print Network [OSTI]

    Cooper, Jason Kyle

    2013-01-01

    gallium diselenide (CIGS) solar cells were studied. TheCIGS (copper indium gallium diselenide) thin film solar cells

  18. The natural and industrial cycling of indium in the environment

    E-Print Network [OSTI]

    White, Sarah Jane O'Connell

    2012-01-01

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling ...

  19. An evaluation of indium antimonide quantum well transistor technology

    E-Print Network [OSTI]

    Liu, Jingwei, M. Eng. Massachusetts Institute of Technology

    2006-01-01

    Motivated by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its ...

  20. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    E-Print Network [OSTI]

    Gross, J L

    2011-01-01

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  1. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    E-Print Network [OSTI]

    J. L. Gross; M. Thoennessen

    2011-09-28

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  2. Self- and zinc diffusion in gallium antimonide

    SciTech Connect (OSTI)

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

  3. LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia

    E-Print Network [OSTI]

    Yong, Foo Nun

    2006-01-01

    Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase ...

  4. Selenium Speciation and Management in Wet FGD Systems

    SciTech Connect (OSTI)

    Searcy, K; Richardson, M; Blythe, G; Wallschlaeger, D; Chu, P; Dene, C

    2012-02-29

    This report discusses results from bench- and pilot-scale simulation tests conducted to determine the factors that impact selenium speciation and phase partitioning in wet FGD systems. The selenium chemistry in wet FGD systems is highly complex and not completely understood, thus extrapolation and scale-up of these results may be uncertain. Control of operating parameters and application of scrubber additives have successfully demonstrated the avoidance or decrease of selenite oxidation at the bench and pilot scale. Ongoing efforts to improve sample handling methods for selenium speciation measurements are also discussed. Bench-scale scrubber tests explored the impacts of oxidation air rate, trace metals, scrubber additives, and natural limestone on selenium speciation in synthetic and field-generated full-scale FGD liquors. The presence and concentration of redox-active chemical species as well as the oxidation air rate contribute to the oxidation-reduction potential (ORP) conditions in FGD scrubbers. Selenite oxidation to the undesirable selenate form increases with increasing ORP conditions, and decreases with decreasing ORP conditions. Solid-phase manganese [Mn(IV)] appeared to be the significant metal impacting the oxidation of selenite to selenate. Scrubber additives were tested for their ability to inhibit selenite oxidation. Although dibasic acid and other scrubber additives showed promise in early clear liquor (sodium based and without calcium solids) bench-scale tests, these additives did not show strong inhibition of selenite oxidation in tests with higher manganese concentrations and with slurries from full-scale wet FGD systems. In bench-tests with field liquors, addition of ferric chloride at a 250:1 iron-to-selenium mass ratio sorbed all incoming selenite to the solid phase, although addition of ferric salts had no impact on native selenate that already existed in the field slurry liquor sample. As ORP increases, selenite may oxidize to selenate more rapidly than it sorbs to ferric solids. Though it was not possible to demonstrate a decrease in selenium concentrations to levels below the project�¢����s target of 50 ���µg/L during pilot testing, some trends observed in bench-scale testing were evident at the pilot scale. Specifically, reducing oxidation air rate and ORP tends to either retain selenium as selenite in the liquor or shift selenium phase partitioning to the solid phase. Oxidation air flow rate control may be one option for managing selenium behavior in FGD scrubbers. Units that cycle load widely may find it more difficult to impact ORP conditions with oxidation air flow rate control alone. Because decreasing oxidation air rates to the reaction tank showed that all �¢����new�¢��� selenium reported to the solids, the addition of ferric chloride to the pilot scrubber could not show further improvements in selenium behavior. Ferric chloride addition did shift mercury to the slurry solids, specifically to the fine particles. Several competing pathways may govern the reporting of selenium to the slurry solids: co-precipitation with gypsum into the bulk solids and sorption or co-precipitation with iron into the fine particles. Simultaneous measurement of selenium and mercury behavior suggests a holistic management strategy is best to optimize the fate of both of these elements in FGD waters. Work conducted under this project evaluated sample handling and analytical methods for selenium speciation in FGD waters. Three analytical techniques and several preservation methods were employed. Measurements of selenium speciation over time indicated that for accurate selenium speciation, it is best to conduct measurements on unpreserved, filtered samples as soon after sampling as possible. The capital and operating costs for two selenium management strategies were considered: ferric chloride addition and oxidation air flow rate control. For ferric chloride addition, as migh

  5. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect (OSTI)

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro; PRESTO, Japan Science and Technology Agency , Honcho Kawaguchi, 332–0012 Saitama

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  6. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  7. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect (OSTI)

    Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  8. A high frequency titration of indium with benzenephosphinic acid 

    E-Print Network [OSTI]

    Keilt, Francis Xavier

    1960-01-01

    of the titrant would not indicate any change in the conductance of the solution. Tin, titanium, zirconium, bismuth, molybdenum, uranium, tungsten, and cerium would interfere with the ti. tration of indium. TABLE OF COHTEHTS Page I? XHTRODUCTIOH... by the addition of 0. 1899 M. HPhin to an indium chloride solution containing 1. 4. 00 milliliters of 0. 1000 M. sodium chloride . ~ 27 2. 16. 00 millili. ters of 0. 1000 M. sodium chloride. . . 27 3. 28. 00 milliliters of 0. 1000 M. sodium chloride. ~ . 28 4...

  9. Treating chronic arsenic toxicity with high selenium lentil diets

    SciTech Connect (OSTI)

    Sah, Shweta [Department of Ecosystem and Public Health, Faculty of Medicine, University of Calgary, Calgary, AB T2N 4Z6 (Canada); Vandenberg, Albert [Department of Plant Sciences, University of Saskatchewan, Saskatoon, SK S7N 5A8 (Canada); Smits, Judit, E-mail: judit.smits@ucalgary.ca [Department of Ecosystem and Public Health, Faculty of Veterinary Medicine, University of Calgary, Calgary, AB T2N 4Z6 (Canada)

    2013-10-01

    Arsenic (As) toxicity causes serious health problems in humans, especially in the Indo-Gangetic plains and mountainous areas of China. Selenium (Se), an essential micronutrient is a potential mitigator of As toxicity due to its antioxidant and antagonistic properties. Selenium is seriously deficient in soils world-wide but is present at high, yet non-toxic levels in the great plains of North America. We evaluate the potential of dietary Se in counteracting chronic As toxicity in rats through serum biochemistry, blood glutathione levels, immunotoxicity (antibody response), liver peroxidative stress, thyroid response and As levels in tissues and excreta. To achieve this, we compare diets based on high-Se Saskatchewan (SK) lentils versus low-Se lentils from United States. Rats drank control (0 ppm As) or As (40 ppm As) water while consuming SK lentils (0.3 ppm Se) or northwestern USA lentils (< 0.01 ppm Se) diets for 14 weeks. Rats on high Se diets had higher glutathione levels regardless of As exposure, recovered antibody responses in As-exposed group, higher fecal and urinary As excretion and lower renal As residues. Selenium deficiency caused greater hepatic peroxidative damage in the As exposed animals. Thyroid hormones, triiodothyronine (T3) and thyroxine (T4), were not different. After 14 weeks of As exposure, health indicators in rats improved in response to the high Se lentil diets. Our results indicate that high Se lentils have a potential to mitigate As toxicity in laboratory mammals, which we hope will translate into benefits for As exposed humans. - Highlights: • We reduce chronic arsenic toxicity in rats with a whole food solution. • High selenium lentils decrease liver damage and increase blood glutathione levels. • High selenium lentil diets increase urinary and fecal arsenic excretion. • High selenium lentil diets decrease arsenic levels in kidney, the storage organ. • High selenium lentil diets reverse arsenic suppression of the B cell response.

  10. Two-photon photovoltaic effect in gallium arsenide Jeff Chiles,1

    E-Print Network [OSTI]

    Fathpour, Sasan

    Two-photon photovoltaic effect in gallium arsenide Jichi Ma,1 Jeff Chiles,1 Yagya D. Sharma,2 214669); published September 4, 2014 The two-photon photovoltaic effect is demonstrated in gallium; (230.0250) Optoelectronics; (040.5350) Photovoltaic; (130.4310) Nonlinear. http://dx.doi.org/10.1364/OL

  11. Preliminary survey report: control technology for gallium arsenide processing at Morgan Semiconductor Division, Garland, Texas

    SciTech Connect (OSTI)

    Lenihan, K.L.

    1987-03-01

    The report covers a walk through survey made of the Morgan Semiconductor Facility in Garland, Texas, to evaluate control technology for gallium-arsenide dust in the semiconductor industry. Engineering controls included the synthesis of gallium-arsenide outside the crystal pullers to reduce arsenic residues in the pullers, also reducing worker exposure to arsenic during cleaning of the crystal pullers.

  12. IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption

    E-Print Network [OSTI]

    Grandidier, Jonathan

    the cost of a solar cell compared with first-generation solar cells, usually at the expense of efficiencyIEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption flat gallium arsenide solar cell, we show that it is possible to modify the flow of light and enhance

  13. Gallium-rich reconstructions on GaAs(001) M. Pristovsek*; 1

    E-Print Network [OSTI]

    Schmidt, Wolf Gero

    - tion High-Energy Electron Diffraction. Annealing or dosing gallium above about 800 K invariably re- layer of gallium, it transforms into a (4 Â 6) reconstruction. The observed translational symmetries, and to contribute to their microscopic understanding. To this end we combine in-situ Reflection High-Energy Electron

  14. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOE Patents [OSTI]

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  15. Au-free Ohmic Contacts to Gallium Nitride and Graphene 

    E-Print Network [OSTI]

    Ravikirthi, Pradhyumna

    2014-08-10

    -sputtered contact. 20 3. AU-FREE SCHEME FOR GALLIUM NITRIDE 3.1. Survey of Au-free contacts in literature and scope for improvement For n-type GaN, it was observed that aluminium and gold form poor ohmic contacts (resistances in the order of 10-3 ?/cm2...] used Ti/Al and found better results for ohmic resistance compared to GaN[17]. However, Ti/Al contacts lost its stability at high temperatures due to formation of aluminium lumps on the surface, increasing its roughness and resistance. Fan et al [20...

  16. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode 

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  17. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO); Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-03-24

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  18. JV Task - 116 Selenium's Role in the Seafood Safety Issue

    SciTech Connect (OSTI)

    Nicholas Ralston; Laura Raymond

    2009-03-30

    Continuing studies under these three funded projects - (JV Task 77 The Health Implications of the Mercury-Selenium Interaction, JV Task 96 Investigating the Importance of the Mercury-Selenium Interaction, and JV Task 116 Selenium's Role in the Seafood Safety Issue) - were performed to determine the effects of different levels of dietary mercury and selenium on the growth and development of test animals, and related tissue analyses, to understand the protective benefits of dietary selenium in reference to low-level exposure to mercury. Maternal exposure to methylmercury from seafood has been found to cause neurodevelopmental harm in children. However, significant nutritional benefits will be lost if fish consumption is needlessly avoided. The results of these studies support the hypothesis that intracellular Se itself is the physiologically important biomolecule and that the harm of mercury toxicity arises when Hg abundance becomes great enough to bind a significant portion of intracellular Se in vulnerable tissues such as the brain. Formation of HgSe limits bioavailability of Se for synthesis of Se-dependent enzymes, particularly in brain tissues. When production of these enzymes is impaired, the loss of their numerous essential functions results in the signs and symptoms of Hg toxicity. The finding that one mole of Se protects against many moles of Hg indicates that its beneficial effect is not due to sequestration of mercury as HgSe but rather due to the biological activity of the Se. Therefore, the selenium content of seafoods must be considered along with their methylmercury contents in evaluating the effect of dietary exposure to mercury.

  19. Effect of a liquid multi-vitamin-mineral supplement on anaerobic exercise performance

    E-Print Network [OSTI]

    Fry, Andrew C.; Bloomer, Richard J.; Falvo, Michael J.; Moore, Chris A.; Schilling, Brian K.; Weiss, Lawrence W.

    2006-01-01

    IU 150 Vitamin E 45 IU 150 Calcium 60 mg 8 Chromium 150 ?g — Iodine 150 ?g 100 Iron 150 ?g 66 Magnesium 100 mg — Manganese 5 mg — Potassium 100 mg — Selenium 150 ?g — Sodium 5 mg 2 Zinc 23 mg 150 Each 1 oz. serving contains bromide, cerium, cesium, cobalt, copper, dysprosium, erbium, europium, fluoride, gadolinium, gallium, germanium, gold, hafnium, holmium, indium, iridium, kjeldhal, lanthanum, lithium, molybde- num, neodymium, nickel...

  20. NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01

    Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

  1. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  2. Novel ethylenediamine-gallium phosphate containing 6-fold coordinated gallium atoms with unusual four equatorial Ga–N bonds

    SciTech Connect (OSTI)

    Torre-Fernández, Laura [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); Espina, Aránzazu; Khainakov, Sergei A.; Amghouz, Zakariae [Servicios Científico Técnicos, Universidad de Oviedo, 33006 Oviedo (Spain); García, José R. [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); García-Granda, Santiago, E-mail: sgg@uniovi.es [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain)

    2014-07-01

    A novel ethylenediamine-gallium phosphate, formulated as Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, was synthesized under hydrothermal conditions. The crystal structure, including hydrogen positions, was determined using single-crystal X-ray diffraction data (monoclinic, a=9.4886(3) Ĺ, b=6.0374(2) Ĺ, c=10.2874(3) Ĺ, and ?=104.226(3)°, space group Pc) and the bulk was characterized by chemical (Ga–P–C–H–N) and thermal analysis (TG–MS and DSC), including activation energy data of its thermo-oxidative degradation, powder X-ray diffraction (PXRD), solid-state nuclear magnetic resonance (SS-NMR) measurements, and transmission electron microscopy (TEM, SAED/NBD, and STEM BF-EDX). The crystal structure is built up of infinite zig-zag chains running along the c-axis, formed by vertex-shared (PO{sub 4}) and (GaO{sub 2}N{sub 4}) polyhedra. The new compound is characterized by unusual four equatorial Ga–N bonds coming from two nonequivalent ethylenediamine molecules and exhibits strong blue emission at 430 nm (?{sub ex}=350 nm) in the solid state at room temperature. - Graphical abstract: Single crystals of a new ethylenediamine-gallium phosphate, Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, were obtained and the structural features presented. This structure is one of the scarce examples of GaPO with Ga–N bonds reported. - Highlights: • A novel ethylenediamine-gallium phosphate was hydrothermally synthesized. • The new compound is characterized by unusual four equatorial Ga–N bonds. • Void-volume analysis shows cages and channels with sizes ideally suited to accommodate small molecules. • The new compound exhibits strong blue emission.

  3. NREL: Process Development and Integration Laboratory - Copper Indium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines lightGeospatial Toolkit TheCompetitiveMattPhoto ofGallium Diselenide

  4. The role of gallium in the catalytic activity of zeolite [Si,Ga]-ZSM-5 for methanol conversion

    SciTech Connect (OSTI)

    Lalik, E.; Xinsheng Liu; Klinowski, J. [Univ. of Cambridge (United Kingdom)

    1992-01-23

    The authors report results from use of aluminium-free zeolytic catalysts, loaded with gallium to different levels, for the conversion of methanol. Work was done for temperatures up to 400{degrees}C. They find a strong dependence and selectivity for conversion to dimethyl ether with gallium content between 150 and 300{degrees}C. At higher temperatures they observe enhanced conversion of alkanes into aromatics. The graded gallium content allowed the authors to distinguish the gallium activity from that due to any trace aluminium impurities.

  5. P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene

    E-Print Network [OSTI]

    Cairns, Darran

    P-7 / D. R. Cairns P-7: Wear Resistance of Indium Tin Oxide Coatings on Polyethylene Terephthalate The wear mechanisms of the Indium Tin Oxide (ITO) coated Polyethylene Terephthalate (PET) topsheet). The bottom substrate is typically glass and the top sheet a polyester such as Polyethylene Terephthalate (PET

  6. Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells

    E-Print Network [OSTI]

    Van Stryland, Eric

    Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

  7. Vitamin E and the risk of prostate cancer: Updated results of the Selenium and Vitamin E Cancer Prevention Trial (SELECT)

    E-Print Network [OSTI]

    2012-01-01

    10.1001/jama.2011.1437. Vitamin E and the Risk of Prostateof The Selenium and Vitamin E Cancer Prevention Trial (Effect of Selenium and Vitamin E on Risk of Prostate Cancer

  8. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah

    E-Print Network [OSTI]

    diselenide (CIGS) thin film solar cell. The company's CIGS material utilizes a flexible substrate that allows), photodetectors, and solar cells, represented 31% of gallium demand. The remaining 2% was used in research in the United States decreased to between $450 and $500 per kilogram. Several records for solar cell efficiency

  9. IEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org/semiconductors/materials/thinfilm-trick-makes-gallium-arsenide-devices-cheap[5/22/2010 1:39:13 PM

    E-Print Network [OSTI]

    Rogers, John A.

    to man," says Rogers, a materials engineer. Some GaAs solar cells can convert about 40 percent of the sun // MATERIALS NEWS Thin-Film Trick Makes Gallium Arsenide Devices Cheap Rubber-stamping makes creating solarIEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org

  10. Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study

    E-Print Network [OSTI]

    Ludwig, Christian D R; Felser, Claudia; Schilling, Tanja; Windeln, Johannes; Kratzer, Peter

    2010-01-01

    Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which may contribute to the low observed efficiency of Ga-rich CIGS solar cells.

  11. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    E-Print Network [OSTI]

    Flewitt, Andrew J.; Powell, M.J.

    2014-01-01

    crystal to organic light emitting diode technology and with requirements for larger areas and higher resolutions. A number of alternative material systems to a-Si:H have emerged, including organic semiconductors,2 nanocrystalline silicon...

  12. Exploration of Novel Reaction Pathway for Formation of Copper Indium Gallium Diselenide: Cooperative Research and Development Final Report, CRADA Number CRD-03-121

    SciTech Connect (OSTI)

    van Hest, M.

    2014-11-01

    The investigation will explore a potentially low-cost method of forming CIGS for use in solar cells. Investigators from HelioVolt will work in NREL laboratories to modify and apply our tools in fabrication of the CIGS layer. Investigators from NREL will assist in preparing substrates and in compleing solar cells composed of these CIGS layers to evaluate the effectiveness of the HelioVolt processes.

  13. What controls selenium release during shale weathering? Adriana Matamoros-Veloza

    E-Print Network [OSTI]

    Benning, Liane G.

    What controls selenium release during shale weathering? Adriana Matamoros-Veloza , Robert J can clearly separate the proportions of Se present in the sulphide versus the organic pools in shales and pyrite oxidation will control the release of selenium during shale weathering. Ó 2011 Elsevier Ltd. All

  14. Selenium and Lung Cancer: A Quantitative Analysis of Heterogeneity in the Current

    E-Print Network [OSTI]

    California at Berkeley, University of

    Selenium and Lung Cancer: A Quantitative Analysis of Heterogeneity in the Current Epidemiological on sele- nium and lung cancer and identify sources of heterogeneity among studies. When all studies were.30). Overall, these results suggest that selenium may have some protective effect against lung cancer

  15. The design, construction, and testing of a nuclear fuel rod thermal simulation system to study gallium/Zircaloy interactions 

    E-Print Network [OSTI]

    Allison, Christopher Curtis

    1999-01-01

    The presence of gallium in weapons grade plutonium has raised many questions concerning its use in light water reactor (LWR) fuel rods. The biggest concern is that the gallium will migrate down the thermal gradient in the fuel rod and deposit...

  16. Spin-phonon coupling in scandium doped gallium ferrite

    SciTech Connect (OSTI)

    Chakraborty, Keka R. E-mail: smyusuf@barc.gov.in; Mukadam, M. D.; Basu, S.; Yusuf, S. M. E-mail: smyusuf@barc.gov.in; Paul, Barnita; Roy, Anushree; Grover, Vinita; Tyagi, A. K.

    2015-03-28

    We embarked on a study of Scandium (Sc) doped (onto Ga site) gallium ferrite (GaFeO{sub 3}) and found remarkable magnetic properties. In both doped as well as parent compounds, there were three types of Fe{sup 3+} ions (depending on the symmetry) with the structure conforming to space group Pna2{sub 1} (Sp. Grp. No. 33) below room temperature down to 5?K. We also found that all Fe{sup 3+} ions occupy octahedral sites, and carry high spin moment. For the higher Sc substituted sample (Ga{sub 1?x}Sc{sub x}FeO{sub 3}: x?=?0.3), a canted magnetic ordered state is found. Spin-phonon coupling below Néel temperature was observed in doped compounds. Our results indicated that Sc doping in octahedral site modifies spin-phonon interactions of the parent compound. The spin-phonon coupling strength was estimated for the first time in these Sc substituted compounds.

  17. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    SciTech Connect (OSTI)

    Muńoz-Tabares, J.A.; Reyes-Gasga, J.

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ? 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: • We show a new type of artifact induced during preparation of TEM samples by FIB. • Deposition of Ga occurs due to its high affinity for oxygen. • Materials with small grain size (? 5 nm) could promote Ga deposition. • Small grain size permits the elastic accommodation of deposited Ga.

  18. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  19. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, Carleton H. (1304 Onava Ct., NE., Albuquerque, NM 87112); Evans, Jr., Joseph Tate (13609 Verbena Pl., NE., Albuquerque, NM 87112)

    1998-01-01

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  20. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  1. Crystal chemistry and self-lubricating properties of monochalcogenides gallium selenide and tin selenide

    SciTech Connect (OSTI)

    Erdemir, A.

    1993-02-01

    This paper describes the fundamentals of the crystal chemistry and self-lubricating mechanisms of two monochalcogenides; tin selenide and gallium selenide. Specifically, it enumerates their inter-atomic array and bond structure in crystalline states, and correlates this fundamental knowledge with their self-lubricating capacity. Friction tests assessing the self-lubricating performance of gallium and tin selenides were carried out on a pin-on-disk machine. Specifically, large crystalline pieces of gallium selenide and tin selenide were cut and cleaved into flat squares and subsequently rubbed against the sapphire balls. In another case, the fine powders (particle size {approx} 50--100 {mu}m) of gallium selenide and tin selenide were manually fed into the sliding interfaces of 440C pins and 440C disks. For the specific test conditions explored, it was found that the friction coefficients of the sapphire/gallium selenide and sapphire/tin selenide pairs were {approx} 0.23 and {approx} 0.35, respectively. The friction coefficients of 440C pin/440C disk test pairs with gallium selenide and tin selenide powders were on the orders of {approx} 0.22 and {approx} 0.38, respectively. For comparison, a number of parallel friction tests were performed with MoS{sub 2} powders and compacts and the results of these tests were also reported. The friction data together with the crystal-chemical knowledge and the electron microscopic evidence supported the conclusion that the lubricity and self-lubricating mechanisms of these solids are closely related to their crystal chemistry and the nature of interlayer bonding.

  2. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect (OSTI)

    Faraby, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); DiBattista, M. [Qualcomm Technologies Incorporated, San Diego, California 92121 (United States); Bandaru, P. R., E-mail: pbandaru@ucsd.edu [Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-04-28

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  3. Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)

    SciTech Connect (OSTI)

    Morris, R.N.

    1998-08-01

    This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

  4. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect (OSTI)

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adiguezel, Denis; Stutzmann, Martin; Sharp, Ian D.; Thalhammer, Stefan

    2012-07-27

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth dynamics of adherent cells were compared to control samples. The impact of ionizing radiation on DNA, along with the associated cellular repair mechanisms, is well characterized and serves as a reference tool for evaluation of substrate effects. The results indicate that gallium nitride does not require specific surface treatments to ensure biocompatibility and suggest that cell signaling is not affected by micro-environmental alterations arising from gallium nitride-cell interactions. The observation that gallium nitride provides no bio-functional influence on the cellular environment confirms that this material is well suited for future biosensing applications without the need for additional chemical surface modification.

  5. Inorganic arrangement crystal beryllium, lithium, selenium and silicon

    E-Print Network [OSTI]

    Gobato, Ricardo; Fedrigo, Desire Francine Gobato

    2015-01-01

    The use of inorganic crystals technology has been widely date. Since quartz crystals for watches in the nineteenth century, and common way radio in the early twentieth century, to computer chips with new semiconductor materials. Chemical elements such as beryllium, lithium, selenium and silicon, are widely used in technology. The development of new crystals arising from that arrangement can bring technological advances in several areas of knowledge. The likely difficulty of finding such crystals in nature or synthesized, suggest an advanced study of the subject. A study using computer programs with ab initio method was applied. As a result of the likely molecular structure of the arrangement of a crystal was obtained.

  6. Indium-111-labeled platelets in monitoring human pancreatic transplants

    SciTech Connect (OSTI)

    Catafau, A.M.; Lomena, F.J.; Ricart, M.J.; Pons, F.; Piera, C.; Pavia, J.; Moragas, M.; Garcia, A.; Herranz, R.; Andreu, J. (Nuclear Medicine Service, Barcelona (Spain))

    1989-09-01

    We have performed 59 {sup 111}In-labeled platelet scintigraphies in 12 patients with pancreas transplant, and we have compared retrospectively the {sup 111}In platelet uptake with the graft immunological situation. A diffuse uptake in the graft was seen in five of six patients with pancreatic rejection. The scans became positive before changes in biochemical tests were detected. No {sup 111}In platelet uptake was seen in five of seven normally functioning grafts. Two cases of venous thrombosis and two perigraft hematomas appeared like a focal {sup 111}In platelet accumulation. Indium-111-labeled platelet scintigraphy can be a useful method for monitoring pancreas transplants. It may be helpful in the early detection of pancreatic allograft rejection and in the differential diagnosis between this and other complications such as thrombosis or hematomas.

  7. Synthesis of indium sulphide quantum dots in perfluoronated ionomer membrane

    SciTech Connect (OSTI)

    Sumi, R. [Centre for Nanotechnology Research, VIT University, Vellore (India); Warrier, Anita R.; Vijayan, C. [Department of Physics, Indian Institute of Technology, Chennai (India)

    2014-01-28

    In this paper, we demonstrate a simple and efficient method for synthesis of ?-indium sulphide (In{sub 2}S{sub 3}) nanoparticles embedded in an ionomer matrix (nafion membrane). The influence of reaction temperature on structural, compositional and optical properties of these films were analysed using X-Ray Diffraction, EDAX, UV-Vis absorption spectroscopy and photoluminescence studies. Average particle diameter was estimated using modified effective mass approximation method. Absorption spectra of In{sub 2}S{sub 3} nanoparticles show blue shift compared to bulk In{sub 2}S{sub 3}, indicating strong quantum size confinement effects. PL emission in the wavelength range 530–600 nm was recorded using a 488 nm line from an Ar{sup +} laser as the excitation source.

  8. Macro- and microscopic properties of strontium doped indium oxide

    SciTech Connect (OSTI)

    Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

    2014-07-28

    Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In{sub 2}O{sub 3}:(SrO){sub x} were investigated for materials with different doping levels at different temperatures (T?=?20–300?°C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x?=?10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn{sub 2}O{sub 4}. An unusual property of high level (x?=?10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100–200?°C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3?×?10{sup ?13}?cm{sup 2}/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

  9. Riley oxidation: A forgotten name reaction for synthesis of selenium nanoparticles

    SciTech Connect (OSTI)

    Shah, Chetan P.; Dwivedi, Charu; Singh, Krishan K.; Kumar, Manmohan; Bajaj, Parma N.

    2010-09-15

    A simple wet chemical method, involving reaction of acetone with selenium dioxide, has been developed, to synthesize polyvinyl alcohol-stabilized selenium nanoparticles. The method is capable of producing nanoparticles in the size range of about 100-300 nm, under ambient conditions. The synthesized nanoparticles can be separated easily from the aqueous sols by a high-speed centrifuge, and can be re-dispersed in aqueous medium by a sonicator. The effect of concentrations of selenium dioxide, acetone and PVA on the size of the selenium nanoparticles has been studied. The size of the selenium nanoparticles has been found to increase with increase in the reaction time as well as the concentration of selenium dioxide, while it decreases with increase in the concentration of the stabilizer, PVA. The synthesized selenium nanoparticles have been characterized by UV-visible optical absorption spectroscopy, X-ray diffraction, energy dispersive X-ray analysis, differential scanning calorimetry, atomic force microscopy, scanning electron microscopy and transmission electron microscopy techniques.

  10. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    using roll-to-roll methods: Knife-over- edge coating, slot-die coating and screen printing,” Solar Energy Materials andCells using Cadmium Sulfide Coating on Indium Phosphide

  11. An investigation of the cadmium absorption of resonance neutrons in cadmium covered indium foils 

    E-Print Network [OSTI]

    Powell, James Edward

    1963-01-01

    AN INVESTIGATION OF THE CADMIUM ABSORPTION OF RESONANCE NEUTRONS IN CADMIUM COVERED INDIUM FOILS A Thesis by JAMES EDWARD POWELL Submitted to the Graduate School of the Agricultural and Mechanical College of Texas in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE August 1963 Major Subject Nuclear Engineering AN INVESTIGATION OF THE CADMIUM ABSORPTION OF RESONANCE NEUTRONS IN CADMIUM COVERED INDIUM FOILS A Thesis by JAMES EDWARD POWELL Approved as to style...

  12. AC electrokinetic manipulation of selenium nanoparticles for potential nanosensor applications

    SciTech Connect (OSTI)

    Mahmoodi, Seyed Reza; Bayati, Marzieh; Hosseinirad, Somayeh; Foroumadi, Alireza; Gilani, Kambiz; Rezayat, Seyed Mahdi

    2013-03-15

    Highlights: ? Se nanoparticles were synthesized using a reverse-microemulsion process. ? AC osmotic fluid flow repulses the particles from electrode edges. ? Dielectrophoretic force attracts the particles to electrode edges. ? Dielectrophoresis electrode showed non-ohmic behavior. ? The device can potentially be used as a nanosensor. - Abstract: We report the AC electrokinetic behavior of selenium (Se) nanoparticles for electrical characterization and possible application as micro/nano devices. selenium Se nanoparticles were successfully synthesized using a reverse-microemulsion process and investigated structurally using X-ray diffraction and transmission electron microscope. Interdigitated castellated ITO and non-castellated platinum electrodes were employed for manipulation of suspended materials in the fluid. Using ITO electrodes at low frequency limits resulted in deposition of Se particles on electrode surface. When Se particles exposed to platinum electrodes in the 10 Hz–1 kHz range and V {sub p?p}> 8, AC osmotic fluid flow repulses the particles from electrode edges. However, in 10 kHz–10 MHz range and V {sub p?p}> 5, dielectrophoretic force attracts the particles to electrode edges. As the Se particle concentration increased, the trapped Se particles were aligned along the electric field line and bridged the electrode gap. The device was characterized and can potentially be useful in making micro/nano electronic devices.

  13. Dielectric Elastomers for Fluidic and Biomedical Applications

    E-Print Network [OSTI]

    McCoul, David

    2015-01-01

    nickel before transferring to PDMS. [174] Carbon NanotubesNickel Indium Platinum Tin Chromium Gallium Lead Mercury Indium Tin Oxide Single-Walled Carbon Nanotubes

  14. Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array

    E-Print Network [OSTI]

    Zhou, Chongwu

    Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire, and will aid in the design and optimization of nanowire-based systems for solar energy-conversion applications, and the photoelectrochemical energy-conversion properties of GaAs nanowire arrays were evaluated in contact with one

  15. Selenium Biotransformations in an Engineered Aquatic Ecosystem for Bioremediation of Agricultural Wastewater via Brine Shrimp

    E-Print Network [OSTI]

    Selenium Biotransformations in an Engineered Aquatic Ecosystem for Bioremediation of Agricultural. Freeman*,,#, Department of Land, Air and Water Resources, University of California, Davis, California, Water Management Research Division, Parlier, California 93648, United States Biological Sciences

  16. Lag and ghosting in a clinical flat-panel selenium digital mammography system

    SciTech Connect (OSTI)

    Bloomquist, Aili K.; Yaffe, Martin J.; Mawdsley, Gordon E.; Hunter, David M.; Beideck, Daniel J. [Sunnybrook and Women's College Health Sciences Centre, Toronto, Ontario M4N 3M5 (Canada); Fletcher Allan Health Care, University of Vermont, Burlington, Vermont 05401 (United States)

    2006-08-15

    We present measurements of lag and ghosting in a FDA-approved digital mammography system that uses a dielectric/selenium based detector structure. Lag is the carryover of signal from a previous image, whereas ghosting is the reduction of sensitivity caused by previous exposure history of the detector. Data from six selenium units were acquired. For the type of selenium detector tested, and under typical clinical usage conditions, the lag was as high as 0.15% of source signal and the ghosting could be as high as 15%. The amount of lag and ghosting varied from unit to unit. Results were compared with data acquired on a phosphor-based full-field digital mammography system. Modifications in the technology of the selenium detectors appear to have resulted in a marked decrease in both lag and ghosting effects in more recent systems.

  17. Field-Measured Oxidation Rates of Biologically Reduced Selenium in Sludge

    E-Print Network [OSTI]

    Benson, Sally M.; Daggett, John; Zawislansi, Peter

    1999-01-01

    Reduced Selenium in Sludge Sally M. Benson, John Daggett andCalifornia 94720 U.S.A. Sludge generated during surface-Finding safe and economical sludge disposal methods requires

  18. Potential for selenium migration at a lignite power plant solid waste disposal facility 

    E-Print Network [OSTI]

    Hall, Steven Douglas

    1986-01-01

    . All groundwater that recharges on the disposal site is slightly saline and flows east, probably discharging into the Gibbons Creek Reservoir. Selenium, arsenic, boron, iron, manganese, and sulfate in the lignite waste effluent exceed either EPA... ( 1975) drinking water standards or EPA (1973) recommended livestock water standards. Since the natural groundwater contains higher concentrations of selenium, iron, manganese, and sulfate than the waste effluent, only arsenic and boron should...

  19. Modeling the behavior of selenium in Pulverized-Coal Combustion systems

    SciTech Connect (OSTI)

    Senior, Constance; Otten, Brydger Van; Wendt, Jost O.L.; Sarofim, Adel

    2010-11-15

    The behavior of Se during coal combustion is different from other trace metals because of the high degree of vaporization and high vapor pressures of the oxide (SeO{sub 2}) in coal flue gas. In a coal-fired boiler, these gaseous oxides are absorbed on the fly ash surface in the convective section by a chemical reaction. The composition of the fly ash (and of the parent coal) as well as the time-temperature history in the boiler therefore influences the formation of selenium compounds on the surface of the fly ash. A model was created for interactions between selenium and fly ash post-combustion. The reaction mechanism assumed that iron reacts with selenium at temperatures above 1200 C and that calcium reacts with selenium at temperatures less than 800 C. The model also included competing reactions of SO{sub 2} with calcium and iron in the ash. Predicted selenium distributions in fly ash (concentration versus particle size) were compared against measurements from pilot-scale experiments for combustion of six coals, four bituminous and two low-rank coals. The model predicted the selenium distribution in the fly ash from the pilot-scale experiments reasonably well for six coals of different compositions. (author)

  20. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    RA, editors. Environmental chemistry of Selenium. New York (approach. Environmental Toxicology and Chemistry 25( 7):USA. Environmental Toxicology and Chemistry 23(12):3003–

  1. Plasma Vitamin D and Prostate Cancer Risk: Results from the Selenium and Vitamin E Cancer Prevention Trial

    E-Print Network [OSTI]

    2014-01-01

    Biomarkers & Prevention Plasma Vitamin D and Prostate Cancerfrom the Selenium and Vitamin E Cancer Prevention Trial Alanwho are using supplemental vitamin D should limit their dose

  2. Band gap narrowing in zinc oxide-based semiconductor thin films...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  3. "Title","Creator/Author","Publication Date","OSTI Identifier...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  4. TITLE AUTHORS SUBJECT SUBJECT RELATED DESCRIPTION PUBLISHER AVAILABILI...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION ALUMINIUM COMPOUNDS BORON COMPOUNDS CHARGE CARRIERS CONCENTRATION RATIO DENSITY DOPED MATERIALS ELECTRONIC STRUCTURE ENERGY GAP GALLIUM COMPOUNDS INDIUM COMPOUNDS...

  5. Conductive indium-tin oxide nanowire and nanotube arrays made by electrochemically assisted deposition in template membranes: switching

    E-Print Network [OSTI]

    Additionally, transparent semiconductor oxide NWs and NTs, such as tin-doped indium oxide (ITO), TiO2 and ZnConductive indium-tin oxide nanowire and nanotube arrays made by electrochemically assisted) and nanotubes (NTs) were grown from acidic aqueous solutions of inorganic precursors in a simple one

  6. Fast neutron scattering on Gallium target at 14.8 MeV

    E-Print Network [OSTI]

    R. Han; R. Wada; Z. Chen; Y. Nie; X. Liu; S. Zhang; P. Ren; B. Jia; G. Tian; F. Luo; W. Lin; J. Liu; F. Shi; M. Huang; X. Ruan; J. Ren; Z. Zhou; H. Huang; J. Bao; K. Zhang; B. Hu

    2014-11-03

    Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

  7. Gallium suboxide vapor attack on chromium, cobalt, molybdenum, tungsten and their alloys at 1200 [degrees] C

    SciTech Connect (OSTI)

    Kolman, D. G. (David G.); Taylor, T. N. (Thomas N.); Park, Y. (Youngsoo); Stan, M. (Marius); Butt, D. P. (Darryl P.); Maggiore, C. J. (Carl J.); Tesmer, Joseph R.; Havrilla, G. J. (George J.)

    2004-01-01

    Our prior work elucidated the failure mechanism of furnace materi als (304 SS, 316 SS, and Hastelloy C-276) exposed to gallium suboxide (Ga{sub 2}O) and/or gallium oxide (Ga{sub 2}O{sub 3}) during plutonium - gallium compound processing. Failure was hypothesized to result from concurrent alloy oxidation/Ga compound reduction followed by Ga uptake. The aim of the current work is to screen candidate replacement materials. Alloys Haynes 25 (49 Co - 20 Cr - 15 W - 10 Ni - 3 Fe - 2 Mn - 0.4 Si, wt%), 52 Mo - 48 Re (wt%), 62 W - 38 Cu (wt%), and commercially pure Cr, Co, Mo, W, and alumina were examined. Preliminary assessments of commercially pure W and Mo - Re suggest that these materials may be suitable for furnace construction. Thermodynamics calculations indicating that materials containing Al, Cr, Mn, Si, and V would be susceptible to oxidation in the presence of Ga{sub 2}O were validated by experimental results. In contrast to that reported previously, an alternate reaction mechanism for Ga uptake, which does not require concurrent alloy oxidation, controls Ga uptake for certain materials. A correlation between Ga solubility and uptake was noted.

  8. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ˝ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  9. THE EFFECT OF ORGANIC SELENIUM SUPPLEMENTATION AND DIETARY ENERGY MANIPULATION ON MARES AND THEIR FOALS: SELENIUM CONCENTRATIONS, GLUTATHIONE PEROXIDASE ACTIVITY, FOALING PARAMETERS AND FOAL PHYSICAL CHARACTERISTICS 

    E-Print Network [OSTI]

    Karren, Brady

    2010-01-16

    Quarter Horse mares (n=28, 465-612 kg BW, 6-19 yrs of age) were used to investigate the effect of organic selenium (Se) supplementation (Selenosource, Diamond V Mills, Inc. Cedar Rapids, IA (SeM)) and DE manipulation on ...

  10. Potential Moderating Effects of Selenium on Mercury Uptake and Selenium:Mercury Molar Ratios in Fish From Oak Ridge and Savannah River Site - 12086

    SciTech Connect (OSTI)

    Burger, Joanna; Gochfeld, Michael; Donio, Mark; Jeitner, Christian; Pittfield, Taryn

    2012-07-01

    Mercury contamination is an important remediation issue at the U.S. Department of Energy's (DOE) Oak Ridge Reservation and to a lesser extent at other DOE sites because of the hazard it presents, potential consequences to humans and eco-receptors, and completed pathways, to offsite receptors. Recent work has emphasized that selenium might ameliorate the toxicity of mercury, and we examine the selenium:mercury (Se:Hg) molar ratios in fish from Oak Ridge, and compare them to Se:Hg molar ratios in fish from the Savannah River. Selenium/mercury molar ratios varied considerably among and within fish species. There was considerable variation in the molar ratios for individual fish (as opposed to mean ratios by species) for freshwater fish from both sites. The inter-individual variation in molar ratios indicates that such that the molar ratios of mean Se and Hg concentrations may not be representative. Even for fish species with relatively low mercury levels, some individual fish have molar ratios less than unity, the value sometime thought to be protective. Selenium levels varied narrowly regardless of fish size, consistent with homeostatic regulation of this essential trace element. The data indicate that considerable attention will need to be directed toward variations and variances, as well as the mechanisms of the interaction of selenium and mercury, before risk assessment and risk management policies can use this information to manage mercury pollution and risk. Even so, if there are high levels of selenium in the fish from Poplar Creek on Oak Ridge, then the potential exists for some amelioration of adverse health effects, on the fish themselves, predators that eat them, and people who consume them. This work will aid DOE because it will allow managers and scientists to understand another aspect that affects fate and transport of mercury, as well as the potential effects of methylmercury in fish for human and ecological receptors. The variability within fish species, however, suggests that the relative Se:Hg molar ratios in fish are not stable enough to be used in risk assessment at this time. Nor is it known how much excess selenium is required to confer any degree of protectiveness. That is, in conducting risk assessments, it is not possible to determine the spread of ratios, which would be needed for probabilistic risk assessment. Significantly more fish samples per species are required to begin to generate data that would allow it use in risk assessment. Adding Se:Hg molar ratios seems to complicate risk assessment for the potential adverse effects of mercury exposure, and using mercury levels at this time remains the most viable option. (authors)

  11. Selenium Characterization in the Global Rice Supply Chain

    SciTech Connect (OSTI)

    Williams, Paul N.; Lombi, Enzo; Sun, Guo-Xin; Scheckel, Kirk; Zhu, Yong-Guan; Feng, Xinbin; Zhu, Jianming; Carey, Anne-Marie; Adomako, Eureka; Lawgali, Youseff; Deacon, Claire; Meharg, Andrew A.; (UCopenhagen); (Aberdeen); (Chinese Aca. Sci.); (US EPA)

    2009-08-13

    For up to 1 billion people worldwide, insufficient dietary intake of selenium (Se) is a serious health constraint. Cereals are the dominant Se source for those on low protein diets, as typified by the global malnourished population. With crop Se content constrained largely by underlying geology, regional soil Se variations are often mirrored by their locally grown staples. Despite this, the Se concentrations of much of the world's rice, the mainstay of so many, is poorly characterized, for both total Se content and Se speciation. In this study, 1092 samples of market sourced polished rice were obtained. The sampled rice encompassed dominant rice producing and exporting countries. Rice from the U.S. and India were found to be the most enriched, while mean average levels were lowest in Egyptian rice: {approx}32-fold less than their North American equivalents. By weighting country averages by contribution to either global production or export, modeled baseline values for both were produced. Based on a daily rice consumption of 300 g day{sup -1}, around 75% of the grains from the production and export pools would fail to provide 70% of daily recommended Se intakes. Furthermore, Se localization and speciation characterization using X-ray fluorescence ({mu}-XRF) and X-ray absorption near edge structure ({mu}-XANES) techniques were investigated in a Se-rich sample. The results revealed that the large majority of Se in the endosperm was present in organic forms.

  12. Copyright by Ming Zhang, 2003 THERMAL PROPERTIES OF INDIUM NANOPARTICLES AND GOLD SILICIDE

    E-Print Network [OSTI]

    Allen, Leslie H.

    SILICIDE FORMATION BY SCANNING NANOCALORIMETRY BY MING ZHANG B. Engr., Tsinghua University, 1996 M. Engr of Illinois at Urbana-Champaign, 2003 Urbana, Illinois #12;iii THERMAL PROPERTIES OF INDIUM NANOPARTICLES AND GOLD SILICIDE FORMATION BY SCANNING NANOCALORIMETRY Ming Zhang Department of Material Science

  13. Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    : This paper reports on performance enhancement of polymer light-emitting diodes (PLEDs) based on poly(2,5-bis. Keywords : Polymer light emitting diode; Indium tin oxide; Atomic force microscopy; Rutherford backscattering spectroscopy 1. Introduction Polymer light-emitting diodes (PLEDs) have received worldwide

  14. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS Cantilever Resonator

    E-Print Network [OSTI]

    Rubloff, Gary W.

    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS, microelectromechanical system (MEMS) cantilevers, pentacene, III­V MEMS. I. INTRODUCTION THE NEED to monitor. Fan, N. Goldsman, and R. Ghodssi are with the MEMS Sensors and Actuators Laboratory, Department

  15. Transport in indium-decorated graphene U. Chandni, Erik A. Henriksen,

    E-Print Network [OSTI]

    Eisenstein, Jim

    . California Blvd., Pasadena, California 91125, USA (Dated: March 16, 2015) The electronic transport propertiesTransport in indium-decorated graphene U. Chandni, Erik A. Henriksen, and J.P. Eisenstein Institute of Quantum Information and Matter, Department of Physics, California Institute of Technology, 1200 E

  16. 2010 Minerals Yearbook U.S. Department of the Interior

    E-Print Network [OSTI]

    cells to be used in the manufacture of new CIGS solar cells. Indium may be reclaimed directly from old and sputtering takes place. Indium can also be recovered from copper-indium-gallium- diselenide (CIGS) solar

  17. Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

    SciTech Connect (OSTI)

    Ostafiychuk, B. K.; Yaremiy, I. P. Yaremiy, S. I.; Fedoriv, V. D.; Tomyn, U. O.; Umantsiv, M. M.; Fodchuk, I. M.; Kladko, V. P.

    2013-12-15

    The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.

  18. Application of the bounds-analysis approach to arsenic and gallium antisite

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnicalInformation4563AbuseConnectJournal Article:(Journalthedefects in gallium

  19. Selenium in Oklahoma ground water and soil. Quarterly report No. 6

    SciTech Connect (OSTI)

    Atalay, A.; Vir Maggon, D.

    1991-03-30

    Selenium with a consumption of 2 liters per day (5). The objectives of this study are: (1) to determine the concentrations of Se in Oklahoma ground water and soil samples. (2) to map the geographical distribution of Se species in Oklahoma. (3) to relate groundwater depth, pH and geology with concentration of Se.

  20. The distribution of selenium and other trace elements in Texas waters and soils 

    E-Print Network [OSTI]

    Jiang, Desheng

    1999-01-01

    The distribution of selenium in aquatic systems has not been widely investigated. For example, there is very little reliable Se data for Texas river waders. This thesis aims to draw a first order picture of the Se distribution in several Texas...

  1. Speciation and Attenuation of Arsenic and Selenium at Coal Combustion By-Product Management Facilities

    SciTech Connect (OSTI)

    K. Ladwig

    2005-12-31

    The overall objective of this project was to evaluate the impact of key constituents captured from power plant air streams (principally arsenic and selenium) on the disposal and utilization of coal combustion products (CCPs). Specific objectives of the project were: (1) to develop a comprehensive database of field leachate concentrations at a wide range of CCP management sites, including speciation of arsenic and selenium, and low-detection limit analyses for mercury; (2) to perform detailed evaluations of the release and attenuation of arsenic species at three CCP sites; and (3) to perform detailed evaluations of the release and attenuation of selenium species at three CCP sites. Each of these objectives was accomplished using a combination of field sampling and laboratory analysis and experimentation. All of the methods used and results obtained are contained in this report. For ease of use, the report is subdivided into three parts. Volume 1 contains methods and results for the field leachate characterization. Volume 2 contains methods and results for arsenic adsorption. Volume 3 contains methods and results for selenium adsorption.

  2. Dynamics of formation of photoresponse in a detector structure made of gallium arsenide

    SciTech Connect (OSTI)

    Ayzenshtat, G. I., E-mail: ayzen@mail.tomsknet.ru; Lelekov, M. A.; Tolbanov, O. P. [Tomsk State University (Russian Federation)

    2008-04-15

    The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region was performed under illumination with an infrared light-emitting diode with a wavelength of 0.9 {mu}m. In this case, the situation emerging in the device structure under the effect of X-ray radiation or a high-energy electron beam was simulated. It is shown that the variation in the shape of the output signal with time in this case is caused by variation in the electric field profile due to the capture of holes at deep centers in gallium arsenide. An absolutely different distribution of the electric field emerges in the structure under irradiation of a semitransparent cathode of the structure with a red light-emitting diode, emission of which penetrates into the active region for mere 1 {mu}m. In this case, the transformation of the electric field is caused by the capture of electrons. Under the prolonged effect of such radiation, a space-charge-limited current mode emerges in the device.

  3. An assessment of the validity of cerium oxide as a surrogate for plutonium oxide gallium removal studies

    SciTech Connect (OSTI)

    Kolman, D.G.; Park, Y.; Stan, M.; Hanrahan, R.J. Jr.; Butt, D.P.

    1999-03-01

    Methods for purifying plutonium metal have long been established. These methods use acid solutions to dissolve and concentrate the metal. However, these methods can produce significant mixed waste, that is, waste containing both radioactive and chemical hazards. The volume of waste produced from the aqueous purification of thousands of weapons would be expensive to treat and dispose. Therefore, a dry method of purification is highly desirable. Recently, a dry gallium removal research program commenced. Based on initial calculations, it appeared that a particular form of gallium (gallium suboxide, Ga{sub 2}O) could be evaporated from plutonium oxide in the presence of a reducing agent, such as small amounts of hydrogen dry gas within an inert environment. Initial tests using ceria-based material (as a surrogate for PuO{sub 2}) showed that thermally-induced gallium removal (TIGR) from small samples (on the order of one gram) was indeed viable. Because of the expense and difficulty of optimizing TIGR from plutonium dioxide, TIGR optimization tests using ceria have continued. This document details the relationship between the ceria surrogate tests and those conducted using plutonia.

  4. Materials Science and Engineering B54 (1998) 207209 Growth of gallium phosphide layers by chemical beam epitaxy on

    E-Print Network [OSTI]

    Dietz, Nikolaus

    1998-01-01

    Materials Science and Engineering B54 (1998) 207­209 Letter Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates V. Narayanan a, *, N. Sukidi c , Chimin Hu b , N. Dietz c , K.J. Bachmann c , S. Mahajan a , S. Shingubara d a Department of Chemical, Bio

  5. Scanning Tunneling Microscopy and Surface Simulation of Zinc-Blende GaN(001) Intrinsic 4 Reconstruction: Linear Gallium Tetramers?

    E-Print Network [OSTI]

    Reconstruction: Linear Gallium Tetramers? Hamad A. AL-Brithen, Rong Yang, Muhammad B. Haider, Costel Constantin and occupied states, in agreement with surface simulations based on the 4 1 linear tetramer model the existence of linear Ga tetramers. DOI: PACS numbers: 68.35.Bs, 68.37.Ef, 73.20.At Based on both fundamental

  6. GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN AND CARBON MONOXIDE

    E-Print Network [OSTI]

    GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN on field effect devices using catalytic metal gates on silicon carbide substrates has been reviewed (Spetz) and prototype silicon carbide (SiC) FET based sensors show enhanced sensitivity at high temperature

  7. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more »With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  8. Temperature sensibility of the birefringence properties in side-hole photonic crystal fiber filled with Indium

    SciTech Connect (OSTI)

    Reyes-Vera, Erick Gómez-Cardona, Nelson D.; Chesini, Giancarlo; Cordeiro, Cristiano M. B.; Torres, Pedro

    2014-11-17

    We report on the temperature sensitivity of the birefringence properties of a special kind of photonic crystal fiber containing two side holes filled with Indium metal. The modulation of the fiber birefringence is accomplished through the stress field induced by the expansion of the metal. Although the fiber was made at low gas pressures during the indium infiltration process, the birefringence showed anomalous property at a relatively low temperature value, which is completely different from those reported in conventional-like fibers with two holes filled with metal. By modeling the anisotropic changes induced by the metal expansion to the refractive index within the fiber, we are able to reproduce the experimental results. Our results have practical relevance for the design of devices based on this technology.

  9. Indium diffusion through high-k dielectrics in high-k/InP stacks

    SciTech Connect (OSTI)

    Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Galatage, R. V. [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-08-05

    Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

  10. Selenium nutrition of Morone hybrids including dietary requirements, bioavailability, toxicity and effects on immune responses and disease resistance 

    E-Print Network [OSTI]

    Jaramillo, Francisco , Jr

    2006-08-16

    enhance immunocompetence and disease resistance of HSB. In the first experiment, purified and practical diets were supplemented with ?-glucan and selenium in a factorial arrangement and fed to juvenile HSB for 6 wk followed by a S. iniae challenge...

  11. From Soil Aggregate to Watershed, from California's Central Valley to the Salton Sea - Agricultural Selenium Contamination across Ecosystems, Scales, and Disciplines

    E-Print Network [OSTI]

    Kausch, Matteo Francesco

    2013-01-01

    2003. Distribution of chromium contamination and microbialassessment of worldwide contamination of air, water andKrynitsky. 1987. Selenium contamination of the grasslands, a

  12. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect (OSTI)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  13. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    SciTech Connect (OSTI)

    Jacob, Rajani, E-mail: reenatara@rediffmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com; Nazer, Sheeba, E-mail: reenatara@rediffmail.com; Abraham, Anitha, E-mail: reenatara@rediffmail.com; Nair, Sinitha B., E-mail: reenatara@rediffmail.com [Thin film research lab, U.C. College, Aluva, Kerala (India); Pradeep, B.; Urmila, K. S. [Solid State Physics Laboratory, Cochin University of Science and Technology, Cochin (India); Okram, G. S. [UGC-DAE CSR, Khandwa Road, Indore-452 001, Madhya Pradesh (India)

    2014-01-28

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ?1.78eV with high absorption coefficient ?10{sup 6}/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ?2.6?m and the films showed good photo response.

  14. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    SciTech Connect (OSTI)

    Muhammad, R.; Ahamad, R.; Ibrahim, Z.; Othaman, Z.

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  15. Selenium And Arsenic Speciation in Fly Ash From Full-Scale Coal-Burning Utility Plants

    SciTech Connect (OSTI)

    Huggins, F.E.; Senior, C.L.; Chu, P.; Ladwig, K.; Huffman, G.P.; /Kentucky U. /Reaction Engin. Int. /Elect. Power Res. Inst., Palo Alto

    2007-07-09

    X-ray absorption fine structure spectroscopy has been used to determine directly the oxidation states and speciation of selenium and arsenic in 10 fly ash samples collected from full-scale utility plants. Such information is needed to assess the health risk posed by these elements in fly ash and to understand their behavior during combustion and in fly ash disposal options, such as sequestration in tailings ponds. Selenium is found predominantly as Se(IV) in selenite (SeO{sub 3}{sup 2-}) species, whereas arsenic is found predominantly as As(V) in arsenate (AsO{sub 4}{sup 3-}) species. Two distinct types of selenite and arsenate spectra were observed depending upon whether the fly ash was derived from eastern U.S. bituminous (Fe-rich) coals or from western subbituminous or lignite (Ca-rich) coals. Similar spectral details were observed for both arsenic and selenium in the two different types of fly ash, suggesting that the post-combustion behavior and capture of both of these elements are likely controlled by the same dominant element or phase in each type of fly ash.

  16. Using indium tin oxide material to implement the imaging of microwave plasma ignition process

    SciTech Connect (OSTI)

    Wang, Qiang; Hou, Lingyun; Zhang, Guixin Zhang, Boya; Liu, Cheng; Wang, Zhi; Huang, Jian

    2014-02-17

    In this paper, a method is introduced to get global observation of microwave plasma ignition process at high pressure. A microwave resonator was designed with an indium tin oxide coated glass at bottom. Microwave plasma ignition was implemented in methane and air mixture at 10 bars by a 2?ms-3?kW-2.45?GHz microwave pulse, and the high speed images of the ignition process were obtained. The images visually proved that microwave plasma ignition could lead to a multi-point ignition. The system may also be applied to obtain Schlieren images, which is commonly used to observe the development of flame kernel in an ignition process.

  17. Highly efficient inverted organic solar cells using amino acid modified indium tin oxide as cathode

    SciTech Connect (OSTI)

    Li, Aiyuan; Nie, Riming; Deng, Xianyu; Wei, Huaixin; Li, Yanqing; Tang, Jianxin; Zheng, Shizhao; Wong, King-Young

    2014-03-24

    In this paper, we report that highly efficient inverted organic solar cells were achieved by modifying the surface of indium tin oxide (ITO) using an amino acid, Serine (Ser). With the modification of the ITO surface, device efficiency was significantly enhanced from 0.63% to 4.17%, accompanied with an open circuit voltage (Voc) that was enhanced from 0.30?V to 0.55?V. Ultraviolet and X-ray photoelectron spectroscopy studies indicate that the work function reduction induced by the amino acid modification resulting in the decreased barrier height at the ITO/organic interface played a crucial role in the enhanced performances.

  18. Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

    SciTech Connect (OSTI)

    Yang, Chan-Shan [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tang, Tsung-Ta [Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (China); Pan, Ru-Pin [Department of Electrophysics, National Chiao Tung University, Hsinchu 30078, Taiwan (China); Yu, Peichen [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Pan, Ci-Ling, E-mail: clpan@phys.nthu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Science of Matters, Hsinchu 30013, Taiwan (China)

    2014-04-07

    Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding ?/2 at 1.0 THz was achieved in a ?517??m-thick cell. The phase shifter exhibits high transmittance (?78%). The driving voltage required for quarter-wave operation is as low as 5.66?V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

  19. Alternating layers of plutonium and lead or indium as surrogate for plutonium

    SciTech Connect (OSTI)

    Rudin, Sven Peter

    2009-01-01

    Elemental plutonium (Pu) assumes more crystal structures than other elements, plausibly due to bonding f electrons becoming non-bonding. Complex geometries hamper understanding of the transition in Pu, but calculations predict this transition in a system with simpler geometry: alternating layers either of plutonium and lead or of plutonium and indium. Here the transition occurs via a pairing-up of atoms within Pu layers. Calculations stepping through this pairing-up reveal valuable details of the transition, for example that the transition from bonding to non-bonding proceeds smoothly.

  20. EA-1686: Department of Energy Loan Guarantee to SoloPower Inc. for the Electrodeposition-based Copper indium gallium selenide (CIGS) Solar Technology Manufacturing Facility near San Jose, California

    Broader source: Energy.gov [DOE]

    EA cancelled due to a change in project scope; DOE prepared a categorical exclusion determination (8/15/11).

  1. Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. It has been known as a conductive material when elements such as indium, gallium and aluminum are doped.

    E-Print Network [OSTI]

    oxide (ITO), graphene, and carbon nanotube film. In addition, a new generation solar cell electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order

  2. Atomic Layer Deposition of In2O3 Using Cyclopentadienyl Indium: A New Synthetic Route to Transparent Conducting Oxide Films

    E-Print Network [OSTI]

    Atomic Layer Deposition of In2O3 Using Cyclopentadienyl Indium: A New Synthetic Route we present a new method for depositing In2O3 thin films by atomic layer deposition (ALD) using-15 and atomic layer deposition (ALD).16-20 Of these techniques, ALD shows significant promise as this method

  3. Some effects of selenium on the growth and survival of larval stages of the american oyster, Crassostrea virginica 

    E-Print Network [OSTI]

    Smith, Wendy S

    1979-01-01

    SOME EFFECTS OF SELENIUM ON THE GROWTH AND SURVIVAL OF LARVAL STAGES OF THE AMERICAN OYSTER CRASSOSTREA VIRGINICA A Thesis by WENDY S. SMITH Submitted to the Graduate College of Texas ASM Univeristy in partial fulfillment of the requirement... for the degree of MASTER OF SCIENCE May 1979 Major Subject: Biology SOME EFFECTS OF SELENIUM ON Tl-IE GROLJTH AND SURVIVAL OF LARVAL STAGES OF THE ANJERICAN OYSTER CRASSOSTREA VIRGINICA A Thesis by NENDY S. SMITH Approved as to style and content by...

  4. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide A. J. Kerr, E. Chagarov, S. Gu, T. Kaufman-Osborn, S. Madisetti, J. Wu, P. M. Asbeck, S. Oktyabrsky, and A. C.

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide A. J. Kerr, E of plasma enhanced atomic layer deposited dielectrics on Ga- and N- face gallium nitride J. Appl. Phys. 116, 123702 (2014); 10.1063/1.4895985 Atomic layer deposited passivation layers for superlattice

  5. Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

    SciTech Connect (OSTI)

    Xia, Minggang, E-mail: xiamg@mail.xjtu.edu.cn [Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China); Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Cheng, Zhaofang; Han, Jinyun; Zhang, Shengli [Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China); Zheng, Minrui [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Sow, Chorng-Haur [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); National University of Singapore Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore 117542 (Singapore); Thong, John T. L. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Li, Baowen [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); National University of Singapore Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore 117542 (Singapore); Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2014-05-15

    The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga{sup +}) implantation at room temperature. Our results show that Ga{sup +} implantation enhances electrical conductivity by one order of magnitude from 1.01 × 10{sup 3} ?{sup ?1}m{sup ?1} to 1.46 × 10{sup 4} ?{sup ?1}m{sup ?1} and reduces its thermal conductivity by one order of magnitude from 12.7 Wm{sup ?1}K{sup ?1} to 1.22 Wm{sup ?1}K{sup ?1} for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga{sup +} implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga{sup +} point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga{sup +}-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

  6. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  7. Gallium Solar Neutrino Experiments: Absorption Cross sections, Neutrino spectra, and Predicted Event Rates

    E-Print Network [OSTI]

    John N. Bahcall

    1997-10-28

    Neutrino absorption cross sections for 71Ga are calculated for all solar neutrino sources with standard energy spectra, and for laboratory sources of 51Cr and 37Ar; the calculations include, where appropriate, the thermal energy of fusing solar ions and use improved nuclear and atomic data. The ratio, R, of measured (in GALLEX and SAGE) to calculated 51Cr capture rate is R = 0.95 +/- 0.07 (exp)} + ^{+0.04}_{-0.03} (theory). Cross sections are also calculated for specific neutrino energies chosen so that a spline fit determines accurately the event rates in a gallium detector even if new physics changes the energy spectrum of solar neutrinos. Theoretical uncertainties are estimated for cross sections at specific energies and for standard neutrino energy spectra. Standard energy spectra are presented for pp and CNO neutrino sources in the appendices. Neutrino fluxes predicted by standard solar models, corrected for diffusion, have been in the range 120 SNU to 141 SNU since 1968.

  8. Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals

    SciTech Connect (OSTI)

    Li, Xufan; Basile Carrasco, Leonardo A; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2015-01-01

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0 or 60 interlayer rotations. The commensurate stacking configurations (AA and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. The combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

  9. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    SciTech Connect (OSTI)

    Zhang, Yan; Yu, Jianqiang; Sun, Kai; Zhu, Yukun; Bu, Yuyu; Chen, Zhuoyuan

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  10. 2011 Minerals Yearbook U.S. Department of the Interior

    E-Print Network [OSTI]

    Cs) and optoelectronic devices [laser diodes, light-emitting diodes (lEDs), photodetectors, and solar cells]. Gallium solar energy systems by about 75%, and thereby allow copper-indium-gallium diselenide (CiGS) solar

  11. IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale

    E-Print Network [OSTI]

    Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

  12. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    SciTech Connect (OSTI)

    Fitzgerald, M. [ed.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  13. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect (OSTI)

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U??Ga??, (UC)??Ga?? and U??Cs?, (UC)??Cs??, respectively.

  14. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    SciTech Connect (OSTI)

    Zhang, Yingjie; Aziz, Hany, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-07-07

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56?cd/A at the remarkably high brightness of 10{sup 5}?cd/m{sup 2} is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  15. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Xu, Rui; He, Jian [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Song, Yang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Li, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Zaslavsky, A. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Paine, D. C., E-mail: David-Paine@brown.edu [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ?10{sup ?2?}??cm{sup 2}, ?3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ?27?cm{sup 2}/V?s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  16. Ferromagnetism of manganese-doped indium tin oxide films deposited on polyethylene naphthalate substrates

    SciTech Connect (OSTI)

    Nakamura, Toshihiro; Isozaki, Shinichi; Tanabe, Kohei; Tachibana, Kunihide

    2009-04-01

    Mn-doped indium tin oxide (ITO) films were deposited on polyethylene naphthalate (PEN) substrates using radio-frequency magnetron sputtering. The magnetic, electrical, and optical properties of the films deposited on PEN substrates were investigated by comparing with the properties of films grown on glass substrates at the same growth conditions. Thin films on PEN substrates exhibited low electrical resistivity of the order of 10{sup -4} {omega} cm and high optical transmittance between 75% and 90% in the visible region. Ferromagnetic hysteresis loops were observed at room temperature for the samples grown on PEN substrates. Mn-doped ITO films can be one of the most promising candidates of transparent ferromagnetic materials for flexible spintronic devices.

  17. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nmmore »(including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  18. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  19. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group; Mendelsberg, Rueben J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group and Molecular Foundry; Zhu, Jiaqi [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Han, Jiecai [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Anders, Andre [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group

    2013-01-01

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  20. Selenium Bioaccumulation in Stocked Fish as an Indicator of Fishery Potential in Pit Lakes on Reclaimed Coal Mines

    E-Print Network [OSTI]

    Hontela, Alice

    on Reclaimed Coal Mines in Alberta, Canada L. L. Miller · J. B. Rasmussen · V. P. Palace · G. Sterling · A to selenium (Se) and other metals and metalloids in pit lakes formed by open pit coal mining in Tertiary (thermal coal) and in Cretaceous (metallurgical coal) bedrock. Juvenile hatchery rainbow trout

  1. Effect of variation in indium concentration on the photosensitivity of chlorine doped In{sub 2}S{sub 3} thin films

    SciTech Connect (OSTI)

    Cherian, Angel Susan; Kartha, C. Sudha; Vijayakumar, K. P. [Department of Physics, Cochin University of Science and Technology, Kochi 682022 (India)

    2014-01-28

    Consequence of variation in Indium concentration in chlorine doped In2S{sub 3} thin films deposited by spray pyrolysis technique was studied. Chlorine was incorporated in the spray solution, using HCl and Indium concentration was varied by adjusting In/S ratio Interestingly, the photo response of all chlorine doped samples augmented compared to pristine samples; but the highest photosensitivity value of ?2300 was obtained only when 36ml 0.5M HCl was added to the solution of In{sub 2}S{sub 3} having In/S=2/8. It was also observed that samples with high photosensitivity possess higher band gap and variation in sub band gap absoption levels were observed with increase in Indium concentration. The present study proved that concentration of Indium plays an important role in controlling the crystallinity and photosensitivity of chlorine doped samples.

  2. Design and Synthesis of Plasmonic Core/Shell Nanorods for Light Trapping in Organic Photo-Voltaics, Non-Linear Optics and Photo-Thermal Tumor Therapy

    E-Print Network [OSTI]

    Jankovic, Vladan

    2013-01-01

    solar cells, developed in the 1980s and based on amorphous or polycrystalline silicon (Si), copper indium gallium (di)selenide (CIGS), and

  3. Dietary vitamin E requirement of sunshine bass (Morone chrysops [] x M. saxatilis []) and apparent lack of interactions between vitamin E and selenium 

    E-Print Network [OSTI]

    Kocabas, Arif Murat

    1996-01-01

    A 12-week feeding trial was conducted to determine the dietary vitamin E requirement of juvenile sunshine bass (Morone chrysops @ x M saxatilis d), and to investigate the possible interactions between dietary vitamin E and selenium. Sunshine bass...

  4. Selenium fractionation and cycling in the intertidal zone of the Carquinez Strait. Annual report, October 1, 1995--December 31,1996

    SciTech Connect (OSTI)

    Zawislanski, P.T.; McGrath, A.E.; Benson, S.M.

    1997-10-01

    Selenium geochemistry in tidal wetlands is a topic of continuing study at Lawrence Berkeley National Laboratory. The program of studies described in this report was initiated in the fall of 1994 in response to concerns about elevated Se concentrations in waters, sediments, and biota in the Carquinez Strait. Processes by which selenium is introduced and potentially released from the sediment system have been the focus of research in 1996.

  5. X-ray study of the oxidation of liquid-gallium surfaces M. J. Regan,* H. Tostmann, and P. S. Pershan

    E-Print Network [OSTI]

    Pershan, Peter S.

    waves with temperatures up to only 443 K. This is a good indication that the oxide layer provides for the atomic arrangements in the gallium oxide layer and its interface with the underlying liquid. S0163 resistance arises from the natural formation of an inert oxide layer on its free surface.2 The study

  6. Atomic layer structure of manganese atoms on wurtzite gallium nitride Abhijit Chinchore, Kangkang Wang, Wenzhi Lin, Jeongihm Pak, and Arthur R. Smitha

    E-Print Network [OSTI]

    This surface forms the starting point for Mn deposition. The Mn atomic layer was prepared by depositing MnAtomic layer structure of manganese atoms on wurtzite gallium nitride ,,0001Ż... Abhijit Chinchore stage of growth. Certainly, a thin well-ordered layer of Mn atoms on GaN could be of great interest

  7. Stability improvement of organic light emitting diodes by the insertion of hole injection materials on the indium tin oxide substrate

    SciTech Connect (OSTI)

    Chang, Jung-Hung; Liu, Shang-Yi; Wu, I-Wen; Chen, Tsung-Chin; Liu, Chia-Wei [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China); Wu, Chih-I, E-mail: chihiwu@cc.ee.ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China); Department of Electrical and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2014-03-28

    The degradation of organic light-emitting diodes (OLEDs) is a very complex issue, which might include interfacial charge accumulation, material diffusion, and electrical-induced chemical reaction during the operation. In this study, the origins of improvement in device stability from inserting a hole injection layer (HIL) at the indium tin oxide (ITO) anode are investigated. The results from aging single-layer devices show that leakage current increases in the case of ITO/hole transport layer contact, but this phenomenon can be prevented by inserting molybdenum oxide (MoO{sub 3}) or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN{sub 6}) as an HIL. Moreover, X-ray photoemission spectroscopy suggests that the diffusion of indium atoms and active oxygen species can be impeded by introducing MoO{sub 3} or HAT-CN{sub 6} as an HIL. These results reveal that the degradation of OLEDs is related to indium and oxygen out-diffusion from the ITO substrates, and that the stability of OLEDs can be improved by impeding this diffusion with HILs.

  8. Elastic properties of sulphur and selenium doped ternary PbTe alloys by first principles

    SciTech Connect (OSTI)

    Bali, Ashoka, E-mail: rcmallik@physics.iisc.ernet.in; Chetty, Raju, E-mail: rcmallik@physics.iisc.ernet.in; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore-560012 (India)

    2014-04-24

    Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbS{sub x}Te{sub (1?x)} and PbSe{sub x}Te{sub (1?x)} (0?x?1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.

  9. Speciation of Selenium, Arsenic, and Zinc in Class C Fly Ash

    SciTech Connect (OSTI)

    Luo, Yun; Giammar, Daniel E.; Huhmann, Brittany L.; Catalano, Jeffrey G.

    2011-11-17

    A major environmental concern associated with coal fly ash is the mobilization of trace elements that may contaminate water. To better evaluate proper use of fly ash, determine appropriate disposal methods, and monitor postdisposal conditions, it is important to understand the speciation of trace elements in fly ash and their possible environmental impact. The speciation of selenium, arsenic, and zinc was determined in five representative Class C fly ash samples from combustion of sub-bituminous Powder River Basin coal using synchrotron-based X-ray absorption spectroscopy to provide an improved understanding of the mechanisms of trace element association with the fly ash. Selenium in all fly ash samples occurs predominantly as Se(IV), with the exception of one sample, in which there was a minor amount of Se(0). Se(0) is likely associated with the high content of unburned coal in the sample. Arsenic exists in the fly ash as a single phase most consistent with calcium pyroarsenate. In contrast, zinc occurs as two distinct species in the silicate glass matrix of the fly ash. This work demonstrates that residual carbon in fly ash may reduce potential Se mobility in the environment by retaining it as less soluble elemental Se instead of Se(IV). Further, this work suggests that As and Zn in Class C fly ash will display substantially different release and mobilization behaviors in aquatic environments. While As release will primarily depend upon the dissolution and hydrolysis of calcium pyroarsenate, Zn release will be controlled by the dissolution of alkaline aluminosilicate glass in the ash.

  10. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung-Hee University, 1 Seocheon-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Noh, Yong-Jin; Na, Seok-In [Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeonju-si, Jeollabuk-do 561-756 (Korea, Republic of)

    2014-09-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8?nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55?×?10{sup ?5} ? cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54?×?10{sup ?3} ?{sup ?1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10?nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

  11. The electrical conduction properties of poly-crystalline indium-zinc-oxide film

    SciTech Connect (OSTI)

    Tomai, S. [Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba 2990293 (Japan); Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma, Nara 6300192 (Japan); Terai, K.; Junke, T.; Tsuruma, Y.; Ebata, K.; Yano, K. [Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba 2990293 (Japan); Uraoka, Y. [Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma, Nara 6300192 (Japan)

    2014-02-28

    We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline semiconductor material composed of indium and zinc (p-IZO). A typical conduction mechanism of p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The grain boundary potential of the 2-h-annealed IZO film was calculated to be 100?meV, which was comparable to that of the polycrystalline silicon. However, the p-IZO thin film transistor (TFT) measurement shows rather uniform characteristics. It denotes that the mobility deterioration around the grain boundaries is lower than the case for low-temperature polycrystalline silicon. This assertion was made based on the difference of the mobility between the polycrystalline and amorphous IZO film being much smaller than is the case for silicon transistors. Therefore, we conclude that the p-IZO is a promising material for a TFT channel, which realizes high drift mobility and uniformity simultaneously.

  12. Interfacial reactions between indium tin oxide and triphenylamine tetramer layers induced by photoirradiation

    SciTech Connect (OSTI)

    Satoh, Toshikazu; Fujikawa, Hisayoshi [Toyota Central R and D Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Yamamoto, Ichiro; Murasaki, Takanori; Kato, Yoshifumi [Toyota Industries Corporation, 8 Chaya, Kyowa, Obu, Aichi 474-8601 (Japan)

    2008-05-01

    The effects of photoirradiation on the interfacial chemical reactions between indium tin oxide (ITO) films and layers of triphenylamine tetramer (TPTE) were investigated by using in situ x-ray photoelectron spectroscopy (XPS). Thin TPTE layers deposited onto sputter-deposited ITO films were irradiated with violet light-emitting diodes (peak wavelength: 380 nm). Shifts in the peak positions of spectral components that originated in the organic layer toward the higher binding-energy side were observed in the XPS profiles during the early stages of irradiation. No further peak shifts were observed after additional irradiation. An increase in the ratio of the organic component in the O 1s spectra was also observed during the photoirradiation. The ratio of the organic component increased in proportion to the cube root of the irradiation time. These results suggest that photoirradiation induces an increase in the height of the carrier injection barrier at the interface between TPTE and ITO in the early stages of the irradiation, possibly due to the rapid diffusion controlled formation and growth of an oxidized TPTE layer, which is considered to act as a high resistance layer.

  13. Selenium Accumulation, Distribution, and Speciation in Spineless Prickly Pear Cactus: A Drought- and Salt-Tolerant, Selenium-Enriched Nutraceutical Fruit Crop for Biofortified Foods

    SciTech Connect (OSTI)

    Banuelos, Gary S.; Fakra, Sirine C.; Walse, Spencer S.; Marcus, Matthew A.; Yang, Soo In; Pickering, Ingrid J.; Pilon-Smits, Elizabeth A.H.; Freeman, John L.

    2011-07-01

    The organ-specific accumulation, spatial distribution, and chemical speciation of selenium (Se) were previously unknown for any species of cactus. We investigated Se in Opuntia ficus-indica using inductively coupled plasma mass spectrometry, microfocused x-ray fluorescence elemental and chemical mapping ({micro}XRF), Se K-edge x-ray absorption near-edge structure (XANES) spectroscopy, and liquid chromatography-mass spectrometry (LC-MS). {micro}XRF showed Se concentrated inside small conic, vestigial leaves (cladode tips), the cladode vasculature, and the seed embryos. Se K-edge XANES demonstrated that approximately 96% of total Se in cladode, fruit juice, fruit pulp, and seed is carbon-Se-carbon (C-Se-C). Micro and bulk XANES analysis showed that cladode tips contained both selenate and C-Se-C forms. Inductively coupled plasma mass spectrometry quantification of Se in high-performance liquid chromatography fractions followed by LC-MS structural identification showed selenocystathionine-to-selenomethionine (SeMet) ratios of 75:25, 71:29, and 32:68, respectively in cladode, fruit, and seed. Enzymatic digestions and subsequent analysis confirmed that Se was mainly present in a 'free' nonproteinaceous form inside cladode and fruit, while in the seed, Se was incorporated into proteins associated with lipids. {micro}XRF chemical mapping illuminated the specific location of Se reduction and assimilation from selenate accumulated in the cladode tips into the two LC-MS-identified C-Se-C forms before they were transported into the cladode mesophyll. We conclude that Opuntia is a secondary Se-accumulating plant whose fruit and cladode contain mostly free selenocystathionine and SeMet, while seeds contain mainly SeMet in protein. When eaten, the organic Se forms in Opuntia fruit, cladode, and seed may improve health, increase Se mineral nutrition, and help prevent multiple human cancers.

  14. JV Task 124 - Understanding Multi-Interactions of SO3, Mercury, Selenium, and Arsenic in Illinois Coal Flue Gas

    SciTech Connect (OSTI)

    Ye Zhuang; Christopher Martin; John Pavlish

    2009-03-31

    This project consisted of pilot-scale combustion testing with a representative Illinois basin coal to explore the multi-interactions of SO{sub 3}, mercury, selenium and arsenic. The parameters investigated for SO{sub 3} and mercury interactions included different flue gas conditions, i.e., temperature, moisture content, and particulate alkali content, both with and without activated carbon injection for mercury control. Measurements were also made to track the transformation of selenium and arsenic partitioning as a function of flue gas temperature through the system. The results from the mercury-SO{sub 3} testing support the concept that SO{sub 3} vapor is the predominant factor that impedes efficient mercury removal with activated carbon in an Illinois coal flue gas, while H{sub 2}SO{sub 4} aerosol has less impact on activated carbon injection performance. Injection of a suitably mobile and reactive additives such as sodium- or calcium-based sorbents was the most effective strategy tested to mitigate the effect of SO{sub 3}. Transformation measurements indicate a significant fraction of selenium was associated with the vapor phase at the electrostatic precipitator inlet temperature. Arsenic was primarily particulate-bound and should be captured effectively with existing particulate control technology.

  15. An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun

    SciTech Connect (OSTI)

    Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

    2009-05-04

    Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

  16. Effect of Thermal Annealing in Ammonia on the Properties of InGaN Nanowires with Different Indium Concentrations

    SciTech Connect (OSTI)

    Hahn, Cristopher; Cordones, Amy; Andrews, Sean; Gao, Hanwei; Fu, Anthony; Leone, Stephen; Yang, Peidong

    2012-10-02

    The utility of an annealing procedure in ammonia ambient is investigated for improving the optical characteristics of InxGa1?xN nanowires (0.07 ? x ? 0.42) grown on c-Al2O3 using a halide chemical vapor deposition method. Morphological studies using scanning electron microscopy confirm that the nanowire morphology is retained after annealing in ammonia at temperatures up to 800 ?C. However, significant indium etching and composition inhomogeneities are observed for higher indium composition nanowires (x = 0.28, 0.42), as measured by energy-dispersive X-ray spectroscopy and Z-contrast scanning transmission electron microscopy. Structural analyses, using X-ray diffraction and high-resolution transmission electron microscopy, indicate that this is a result of the greater thermal instability of higher indium composition nanowires. The effect of these structural changes on the optical quality of InGaN nanowires is examined using steady-state and time-resolved photoluminescence measurements. Annealing in ammonia enhances the integrated photoluminescence intensity of InxGa1?xN nanowires by up to a factor of 4.11 ? 0.03 (for x = 0.42) by increasing the rate of radiative recombination. Fitting of photoluminescence decay curves to a Kohlrausch stretched exponential indicates that this increase is directly related to a larger distribution of recombination rates from composition inhomogeneities caused by annealing. The results demonstrate the role of thermal instability on the improved optical properties of InGaN nanowires annealed in ammonia.

  17. LIFE CYCLE INVENTORY ANALYSIS IN THE PRODUCTION OF METALS USED IN PHOTOVOLTAICS.

    SciTech Connect (OSTI)

    FTHENAKIS,V.M.; KIM, H.C.; WANG, W.

    2007-03-30

    Material flows and emissions in all the stages of production of zinc, copper, aluminum, cadmium, indium, germanium, gallium, selenium, tellurium, and molybdenum were investigated. These metals are used selectively in the manufacture of solar cells, and emission and energy factors in their production are used in the Life Cycle Analysis (LCA) of photovoltaics. Significant changes have occurred in the production and associated emissions for these metals over the last 10 years, which are not described in the LCA databases. Furthermore, emission and energy factors for several of the by-products of the base metal production were lacking. This report aims in updating the life-cycle inventories associated with the production of the base metals (Zn, Cu, Al, Mo) and in defining the emission and energy allocations for the minor metals (Cd, In, Ge, Se, Te and Ga) used in photovoltaics.

  18. In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin oxide thin films on polyimide substrates

    E-Print Network [OSTI]

    Li, Teng

    In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin Lou1,b) 1 Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77005, USA 2 Department of Mechanical Engineering and Maryland NanoCenter, University of Maryland

  19. Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Jeffrey W. Elam,*, David A. Baker, Alex B. F. Martinson,, Michael J. Pellin, and

    E-Print Network [OSTI]

    Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors Jeffrey W: NoVember 8, 2007 This article describes a new atomic layer deposition (ALD) method for preparing,2 sol-gel methods,3 chemical vapor deposition,4 pulsed laser deposition,5 and atomic layer

  20. Delta II rocket launching the Mars Exploration Rover,

    E-Print Network [OSTI]

    Torgersen, Christian

    diodes (LEDs), laser diodes, photo detectors, and solar cells. These devices are important of efficient solar cells. Gallium is also used in some unusual applications. Thermal convection in liquidN (gallium nitride), and CIGS (copper-indium-gallium selenide) direct band-gap semiconductors. GaAs and Ga

  1. Leaching characteristics of arsenic and selenium from coal fly ash: role of calcium

    SciTech Connect (OSTI)

    Tian Wang; Jianmin Wang; Yulin Tang; Honglan Shi; Ken Ladwig

    2009-05-15

    Understanding the leaching behavior of arsenic (As) and selenium (Se) in coal fly ash is important in evaluating the potential environmental impact of coal fly ash. Batch experiments were employed to systematically investigate the leaching behavior of As and Se in two major types of coal fly ashes, bituminous coal ash and sub-bituminous coal ash, and to determine the underlying processes that control As and Se leaching. The effects of pH, solid/liquid (S/L) ratio, calcium addition, and leaching time on the release of As and Se were studied. Overall, bituminous coal ash leached significantly more As and Se than sub-bituminous coal ash, and Se was more readily leachable, in both absolute concentration and relative fraction, than As for both types of fly ashes. Adsorption/desorption played a major role on As and Se leaching from bituminous coal ashes. However, calcium precipitation played the most important role in reducing As and Se leaching from sub-bituminous coal ashes in the entire experimental pH range. The leaching of As and Se from bituminous coal ashes generally increased with increases in the S/L ratio and leaching time. However, for sub-bituminous coal ashes, the leaching of As was not detected under most experimental conditions, while the leaching of Se increased with increases in the S/L ratio and leaching time. As{sup V} and Se{sup IV} were found to be the major species in all ash leachates in this study. 46 refs., 7 figs., 1 tab.

  2. Protection of cisplatin-induced spermatotoxicity, DNA damage and chromatin abnormality by selenium nano-particles

    SciTech Connect (OSTI)

    Rezvanfar, Mohammad Amin; Rezvanfar, Mohammad Ali; Shahverdi, Ahmad Reza; Ahmadi, Abbas; Baeeri, Maryam; Mohammadirad, Azadeh; Abdollahi, Mohammad

    2013-02-01

    Cisplatin (CIS), an anticancer alkylating agent, induces DNA adducts and effectively cross links the DNA strands and so affects spermatozoa as a male reproductive toxicant. The present study investigated the cellular/biochemical mechanisms underlying possible protective effect of selenium nano-particles (Nano-Se) as an established strong antioxidant with more bioavailability and less toxicity, on reproductive toxicity of CIS by assessment of sperm characteristics, sperm DNA integrity, chromatin quality and spermatogenic disorders. To determine the role of oxidative stress (OS) in the pathogenesis of CIS gonadotoxicity, the level of lipid peroxidation (LPO), antioxidant enzymes including superoxide dismutase (SOD), catalase (CAT) and glutathione peroxidase (GSH-Px) and peroxynitrite (ONOO) as a marker of nitrosative stress (NS) and testosterone (T) concentration as a biomarker of testicular function were measured in the blood and testes. Thirty-two male Wistar rats were equally divided into four groups. A single IP dose of CIS (7 mg/kg) and protective dose of Nano-Se (2 mg/kg/day) were administered alone or in combination. The CIS-exposed rats showed a significant increase in testicular and serum LPO and ONOO level, along with a significant decrease in enzymatic antioxidants levels, diminished serum T concentration and abnormal histologic findings with impaired sperm quality associated with increased DNA damage and decreased chromatin quality. Coadministration of Nano-Se significantly improved the serum T, sperm quality, and spermatogenesis and reduced CIS-induced free radical toxic stress and spermatic DNA damage. In conclusion, the current study demonstrated that Nano-Se may be useful to prevent CIS-induced gonadotoxicity through its antioxidant potential. Highlights: ? Cisplatin (CIS) affects spermatozoa as a male reproductive toxicant. ? Effect of Nano-Se on CIS-induced spermatotoxicity was investigated. ? CIS-exposure induces oxidative sperm DNA damage and impairs steroidogenesis. ? Nano-Se retained sperm quality against CIS-induced free radicals toxic stress.

  3. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David S. (Evergreen, CO); Leisch, Jennifer (Denver, CO); Taylor, Matthew (West Simsbury, CT); Stanbery, Billy J. (Austin, TX)

    2011-09-20

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  4. JOUKNAI, OF GEOPHYSICAL RESEARCH, VOL. 98. NO. D7. PAGES 12.673-12.685, JULY 20. 1993 Aerosol Selenium at Bermuda and Barbados

    E-Print Network [OSTI]

    Prospero, Joseph M.

    Selenium at Bermuda and Barbados W. G.ELLIS,JR.',~, R. ARIMOTO', D.L.SAVOIE~,J. T.MERRILL~,R. A. D U C E ~ ,AND J. M. PROSPBRO~ Daily aerosol samples collected at Bermuda and Barbados as part of the Atmospherc source. Our results indicatedthat a marine biogenicsource of Se accounted for 60-80%of the Se at Barbados

  5. Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

    SciTech Connect (OSTI)

    Gao, S.; Chen, C.; Liu, H. Y.; Lin, Y. S.; Li, S. Z.; Lu, S. H.; Wang, G. Y.; Song, C.; Zeng, F., E-mail: zengfei@mail.tsinghua.edu.cn; Pan, F., E-mail: panf@mail.tsinghua.edu.cn [Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhai, Z. [Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2014-08-11

    The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ?10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000?s, and fast operation speed of <100?ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.

  6. Large-scale patterning of indium tin oxide electrodes for guided mode extraction from organic light-emitting diodes

    SciTech Connect (OSTI)

    Geyer, Ulf; Hauss, Julian; Riedel, Boris; Gleiss, Sebastian; Lemmer, Uli; Gerken, Martina

    2008-11-01

    We describe a cost-efficient and large area scalable production process of organic light-emitting diodes (OLEDs) with photonic crystals (PCs) as extraction elements for guided modes. Using laser interference lithography and physical plasma etching, we texture the indium tin oxide (ITO) electrode layer of an OLED with one- and two-dimensional PC gratings. By optical transmission measurements, the resonant mode of the grating is shown to have a drift of only 0.4% over the 5 mm length of the ITO grating. By changing the lattice constant between 300 and 600 nm, the OLED emission angle of enhanced light outcoupling is tailored from -24.25 deg. to 37 deg. At these angles, the TE emission is enhanced up to a factor of 2.14.

  7. Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating

    DOE Patents [OSTI]

    Howard, Stanley R. (Windsor, SC); Korinko, Paul S. (Aiken, SC)

    2008-05-27

    A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

  8. Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

    SciTech Connect (OSTI)

    Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Bong Kyu; Ahn, Chang-Geun; Kim, Sang-Hyeob [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of); Choi, Chel-Jong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-07-21

    We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter?

  9. Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes

    SciTech Connect (OSTI)

    Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2014-01-27

    We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup ?} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2?eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91?cd/A, 102?lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

  10. Indium tin oxide (ITO) was used as a hole conductor for quantum dot sensitized solar cells (QDSSC) and optimization of the deposition of ITO was investigated. To determine optimal voltage for electrochemically assisted deposition (EAD) of ITO, linear swee

    E-Print Network [OSTI]

    Abstract Indium tin oxide (ITO) was used as a hole conductor for quantum dot sensitized solar cells sensitized solar cells - Quantum dot sensitized solar cells could be much less costly than traditional solar

  11. Measurement of the Solar Neutrino Capture Rate by the Russian-American Gallium Solar Neutrino Experiment During One Half of the 22-Year Cycle of Solar Activity

    E-Print Network [OSTI]

    SAGE Collaboration; J. N. Abdurashitov

    2002-07-09

    We present the results of measurements of the solar neutrino capture rate in gallium metal by the Russian-American Gallium Experiment SAGE during slightly more than half of a 22-year cycle of solar activity. Combined analysis of the data of 92 runs during the 12-year period January 1990 through December 2001 gives a capture rate of solar neutrinos with energy more than 233 keV of 70.8 +5.3/-5.2 (stat.) +3.7/-3.2 (syst.) SNU. This represents only slightly more than half of the predicted standard solar model rate of 128 SNU. We give the results of new runs beginning in April 1998 and the results of combined analysis of all runs since 1990 during yearly, monthly, and bimonthly periods. Using a simple analysis of the SAGE results combined with those from all other solar neutrino experiments, we estimate the electron neutrino pp flux that reaches the Earth to be (4.6 +/- 1.1) E10/(cm^2-s). Assuming that neutrinos oscillate to active flavors the pp neutrino flux emitted in the solar fusion reaction is approximately (7.7 +/- 1.8) E10/(cm^2-s), in agreement with the standard solar model calculation of (5.95 +/- 0.06) E10/(cm^2-s).

  12. An Alternative Interpretation of Plasma Selenium Data from Endangered Patagonian Huemul Deer ( Hippocamelus bisulcus )

    SciTech Connect (OSTI)

    Flueck, Werner T.; Smith-Flueck, Jo Anne M.; Mincher, Bruce J.; Winkel, Lenny H. H.E.

    2014-10-01

    The prevalence of osteopathology in 57% in the endangered adult Patagonian huemul deer (Hippocamelus bisulcus), malformed antler development, and general lack of recovery were previously suggested to possibly be related to mineral imbalances like selenium (Se) deficiency, and not to stem from fluorosis. From recent bone analyses of these diseased huemul, fluoride levels averaged 58 ppm (SE=10.7), thus eliminating fluorosis as a causal factor for the osteopathology reported in huemul. In contrast, when analyzing high-elevation sites commonly used by extant populations, we found soils deficient in Se. Ashes from recent volcanism also were very low in Se. As Se-responsive diseases in livestock have been documented in Chile, we reclassified recently published Se levels in huemul and determined that 73% were deficient and 18% marginal. Together with these several lines of indirect evidence, we conclude that Se deficiency plays a role in the lack of recovery of huemul populations.

  13. Experimental Substantiation of the Possibility of Developing Selenium- and Iodine-Containing Pharmaceuticals Based on Blue-Green Algae Spirulina Platensis

    E-Print Network [OSTI]

    Mosulishvili, L M; Belokobylsky, A I; Khisanishvili, L A; Frontasyeva, M V; Pavlov, C C; Gundorina, S F

    2001-01-01

    The great potential of using blue-green algae Spirulina platensis as a matrix for the production of selenium- and iodine-containing pharmaceuticals is shown experimentally. The background levels of 31 major, minor and trace elements (Na, Mg, Al, Cl, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni (using -reaction), As, Br, Zn, Rb, Mo, Ag, Sb, I, Ba, Sm, Tb, Tm, Hf, Ta, W, Au, Hg, Th) in Spirulina platensis biomass were determined by means of epithermal neutron activation analysis. The dependence of selenium and iodine accumulation in spirulina biomass on a nutrient medium loding of the above elements was characterised. To demonstrate the possibilities of determining toxic element intake by spirulina biomass, mercury was selected. The technological parameters for production of iodinated treatment-and-prophylactic pills are developed.

  14. Hydrogen Sensor Based on Yttria-Stabilized Zirconia Electrolyte and Tin-Doped Indium Oxide Sensing Electrode

    SciTech Connect (OSTI)

    Martin, L P; Glass, R S

    2004-03-26

    A solid state electrochemical sensor has been developed for hydrogen leak detection in ambient air. The sensor uses an yttria-stabilized electrolyte with a tin-doped indium oxide sensing electrode and a Pt reference electrode. Excellent sensitivity, and response time of one second or less, are reported for hydrogen gas over the concentration range of 0.03 to 5.5% in air. Cross-sensitivity to relative humidity and to CO{sub 2} are shown to be low. The response to methane, a potentially significant source of interference for such a sensor, is significantly less than that for hydrogen. The sensor shows good reproducibility and was unaffected by thermal cycling over the course of this investigation. The effects of sensing electrode thickness and thermal aging are also reported, and the sensing mechanism is discussed. The sensor is intended for use in vehicles powered by hydrogen fuel cells and hydrogen internal combustion engines. Those vehicles will use and/or store significant quantities of hydrogen, and will require safety sensor for monitoring potential hydrogen leakage in order to ensure passenger safety.

  15. Information technology and innovative drainage management practices for selenium load reduction from irrigated agriculture to provide stakeholder assurances and meet contaminant mass loading policy objectives

    SciTech Connect (OSTI)

    Quinn, N.W.T.

    2009-10-15

    Many perceive the implementation of environmental regulatory policy, especially concerning non-point source pollution from irrigated agriculture, as being less efficient in the United States than in many other countries. This is partly a result of the stakeholder involvement process but is also a reflection of the inability to make effective use of Environmental Decision Support Systems (EDSS) to facilitate technical information exchange with stakeholders and to provide a forum for innovative ideas for controlling non-point source pollutant loading. This paper describes one of the success stories where a standardized Environmental Protection Agency (EPA) methodology was modified to better suit regulation of a trace element in agricultural subsurface drainage and information technology was developed to help guide stakeholders, provide assurances to the public and encourage innovation while improving compliance with State water quality objectives. The geographic focus of the paper is the western San Joaquin Valley where, in 1985, evapoconcentration of selenium in agricultural subsurface drainage water, diverted into large ponds within a federal wildlife refuge, caused teratogenecity in waterfowl embryos and in other sensitive wildlife species. The fallout from this environmental disaster was a concerted attempt by State and Federal water agencies to regulate non-point source loads of the trace element selenium. The complexity of selenium hydrogeochemistry, the difficulty and expense of selenium concentration monitoring and political discord between agricultural and environmental interests created challenges to the regulation process. Innovative policy and institutional constructs, supported by environmental monitoring and the web-based data management and dissemination systems, provided essential decision support, created opportunities for adaptive management and ultimately contributed to project success. The paper provides a retrospective on the contentious planning process and offers suggestions as to how the technical and institutional issues could have been resolved faster through early adoption of some of the core principles of sound EDSS design.

  16. Rare-earth metal gallium silicides via the gallium self-flux method. Synthesis, crystal structures, and magnetic properties of RE(Ga1–xSix)? (RE=Y, La–Nd, Sm, Gd–Yb, Lu)

    SciTech Connect (OSTI)

    Darone, Gregory M.; Hmiel, Benjamin; Zhang, Jiliang [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States); Saha, Shanta; Kirshenbaum, Kevin; Greene, Richard; Paglione, Johnpierre [Department of Physics, University of Maryland, College Park, Maryland 20742 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)

    2013-05-01

    Fifteen ternary rare-earth metal gallium silicides have been synthesized using molten Ga as a molten flux. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with three different structures—the early to mid-late rare-earth metals RE=La–Nd, Sm, Gd–Ho, Yb and Y form compounds with empirical formulae RE(GaxSi1–x)? (0.38?x?0.63), which crystallize with the tetragonal ?-ThSi? structure type (space group I4?/amd, No. 141; Pearson symbol tI12). The compounds of the late rare-earth crystallize with the orthorhombic ?-GdSi? structure type (space group Imma, No. 74; Pearson symbol oI12), with refined empirical formula REGaxSi2–x–y (RE=Ho, Er, Tm; 0.33?x?0.40, 0.10?y?0.18). LuGa?.?????Si?.????? crystallizes with the orthorhombic YbMn?.??Si?.?? structure type (space group Cmcm, No. 63; Pearson symbol oC24). Structural trends are reviewed and analyzed; the magnetic susceptibilities of the grown single-crystals are presented. - Graphical abstract: This article details the exploration of the RE–Ga–Si ternary system with the aim to systematically investigate the structural “boundaries” between the ?-ThSi? and ?-GdSi?-type structures, and studies of the magnetic properties of the newly synthesized single-crystalline materials. Highlights: • Light rare-earth gallium silicides crystallize in ?-ThSi? structure type. • Heavy rare-earth gallium silicides crystallize in ?-GdSi? structure type. • LuGaSi crystallizes in a defect variant of the YbMn?.??Si?.?? structure type.

  17. Growth of gallium nitride films via the innovative technique of atomic-layer epitaxy. Annual progress report, 1 June 1987-31 May 1988

    SciTech Connect (OSTI)

    Davis, R.F.; Paisley, M.J.; Sitar, Z.

    1988-06-01

    Gallium nitride (GaN) is a wide-bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron-drift velocity of GaN are important properties in the performance of short-wavelength optical devices and high-power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or Al/sub x/Ga/sub 1-x/N devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high-power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue-light-emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.

  18. Gallium interactions with Zircaloy 

    E-Print Network [OSTI]

    West, Michael Keith

    1998-01-01

    High fluence ion implantation of Ga ions was conducted ics. on heated Zircaloy-4 in the range of [] Ga ions/[]. Surface effects were studied using SEM and electron microphone analysis. The depth profile of Ga in the Zircaloy was characterized...

  19. SU-E-T-557: Measuring Neutron Activation of Cardiac Devices Irradiated During Proton Therapy Using Indium Foils

    SciTech Connect (OSTI)

    Avery, S; Christodouleas, J; Delaney, K; Diffenderfer, E; Brown, K

    2014-06-01

    Purpose: Measuring Neutron Activation of Cardiac devices Irradiated during Proton Therapy using Indium Foils Methods: The foils had dimensions of 25mm x 25mm x 1mm. After being activated, the foils were placed in a Canberra Industries well chamber utilizing a NaI(Tl) scintillation detector. The resulting gamma spectrum was acquired and analyzed using Genie 2000 spectroscopy software. One activation foil was placed over the upper, left chest of RANDO where a pacemaker would be. The rest of the foils were placed over the midline of the patient at different distances, providing a spatial distribution over the phantom. Using lasers and BBs to align the patient, 200 MU square fields were delivered to various treatment sites: the brain, the pancreas, and the prostate. Each field was shot at least a day apart, giving more than enough time for activity of the foil to decay (t1=2 = 54.12 min). Results: The net counts (minus background) of the three aforementioned peaks were used for our measurements. These counts were adjusted to account for detector efficiency, relative photon yields from decay, and the natural abundance of 115-In. The average neutron flux for the closed multi-leaf collimator irradiation was measured to be 1.62 x 106 - 0.18 x 106 cm2 s-1. An order of magnitude estimate of the flux for neutrons up to 1 keV from Diffenderfer et al. gives 3 x 106 cm2 s-1 which does agree on the order of magnitude. Conclusion: Lower energy neutrons have higher interaction cross-sections and are more likely to damage pacemakers. The thermal/slow neutron component may be enough to estimate the overall risk. The true test of the applicability of activation foils is whether or not measurements are capable of predicting cardiac device malfunction. For that, additional studies are needed to provide clinical evidence one way or the other.

  20. A first-principles study of the electronic structure of Iron-Selenium; Implications for electron-phonon superconductivity

    E-Print Network [OSTI]

    Koufos, Alexander P; Mehl, Michael J

    2013-01-01

    We have performed density functional theory (DFT) calculations using the linearized augmented plane wave method (LAPW) with the local density approximation (LDA) functional to study the electronic structure of the iron-based superconductor Iron-Selenium (FeSe). In our study, we have performed a comprehensive set of calculations involving structural, atomic, and spin configurations. All calculations were executed using the tetragonal lead-oxide or P4/nmm structure, with various volumes, c/a ratios and internal parameters. Furthermore, we investigated the spin polarization using the LDA functional to assess ferromagnetism in this material. The paramagnetic LDA calculations find the equilibrium configuration of FeSe in the P4/nmm structure to have a volume of 472.5au$^3$ with a c/a ratio of 1.50 and internal parameter of 0.255, with the ferromagnetic having comparable results to the paramagnetic case. In addition, we calculated total energies for FeSe using a pseudopotential method, and found comparable results ...

  1. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  2. 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 2749 www.advmat.de

    E-Print Network [OSTI]

    Prentiss, Mara

    . Whitesides* Stretchable Microfluidic Radiofrequency Antennas This paper describes a new method for fabricating stretchable radiofrequency antennas. The antennas consist of liquid metal (eutectic gallium indium be repeatedly stretched, while retaining a high efficiency (> 95 %) in radiation. "Stretchability

  3. ORNL, Industry Collaboration Puts Spotlight on Solar T DOING...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for thin-film copper indium gallium di- selenide, a direct-bandgap material for solar cells. Ferro Corpora- tion (Independence, Ohio) is creating inks and pastes to be used for...

  4. Test vehicle detector characterization system for the Boeing YAL-1 airborne laser

    E-Print Network [OSTI]

    Steininger-Holmes, Jason Thomas

    2008-01-01

    The test vehicle detector characterization system provides a convenient and efficient tool for rapidly evaluating the optical sensitivity of the GAP6012, GAP100, GAP300, and GAP1000 indium gallium arsenide detectors used ...

  5. PROJECT PROFILE: Silicon-Based Tandem Solar Cells

    Broader source: Energy.gov [DOE]

    The project will demonstrate bonded gallium indium phosphide (GaInP) on silicon tandem cells, evaluate the advantages and disadvantages of this method of forming higher-efficiency tandem cells, and compare two- and three-terminal device configurations.

  6. Applications of DOTA-Lanthanide "Click" complexes to sensing and imaging 

    E-Print Network [OSTI]

    Hanna, Jill

    2011-11-23

    structural motif has the ability to complex a plethora of potentially useful radionuclides including; yttrium, indium, gallium, lutetium and gadolinium. In general, DOTA-complexes doped with gadolinium are utilised for the identification of tumour sites while...

  7. Sandia Energy - Sandia Develops a Synthesis of Quantum Dots that...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that Increases the Quantum Yield to 95.5% White light-emitting diodes (LEDs) based on blue indium-gallium-nitride (InGaN) LEDs that excite yellow-green-emitting...

  8. Partitioning of mercury, arsenic, selenium, boron, and chloride in a full-scale coal combustion process equipped with selective catalytic reduction, electrostatic precipitation, and flue gas desulfurization systems

    SciTech Connect (OSTI)

    Chin-Min Cheng; Pauline Hack; Paul Chu; Yung-Nan Chang; Ting-Yu Lin; Chih-Sheng Ko; Po-Han Chiang; Cheng-Chun He; Yuan-Min Lai; Wei-Ping Pan

    2009-09-15

    A full-scale field study was carried out at a 795 MWe coal-fired power plant equipped with selective catalytic reduction (SCR), an electrostatic precipitator (ESP), and wet flue gas desulfurization (FGD) systems to investigate the distribution of selected trace elements (i.e., mercury, arsenic, selenium, boron, and chloride) from coal, FGD reagent slurry, makeup water to flue gas, solid byproduct, and wastewater streams. Flue gases were collected from the SCR outlet, ESP inlet, FGD inlet, and stack. Concurrent with flue gas sampling, coal, bottom ash, economizer ash, and samples from the FGD process were also collected for elemental analysis. By combining plant operation parameters, the overall material balances of selected elements were established. The removal efficiencies of As, Se, Hg, and B by the ESP unit were 88, 56, 17, and 8%, respectively. Only about 2.5% of Cl was condensed and removed from flue gas by fly ash. The FGD process removed over 90% of Cl, 77% of B, 76% of Hg, 30% of Se, and 5% of As. About 90% and 99% of the FGD-removed Hg and Se were associated with gypsum. For B and Cl, over 99% were discharged from the coal combustion process with the wastewater. Mineral trona (trisodium hydrogendicarbonate dehydrate, Na{sub 3}H(CO{sub 3}){sub 2}.2H{sub 2}O) was injected before the ESP unit to control the emission of sulfur trioxide (SO{sub 3}). By comparing the trace elements compositions in the fly ash samples collected from the locations before and after the trona injection, the injection of trona did not show an observable effect on the partitioning behaviors of selenium and arsenic, but it significantly increased the adsorption of mercury onto fly ash. The stack emissions of mercury, boron, selenium, and chloride were for the most part in the gas phase. 47 refs., 3 figs., 11 tabs.

  9. CX-010895: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

  10. innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells

    E-Print Network [OSTI]

    innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells Before 1984, many a solar cell can convert into electricity. Olson thought the focus should change to finding materials-winning gallium indium phosphide/gallium arsenide tandem solar cell, which had achieved record efficiencies, con

  11. Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

    SciTech Connect (OSTI)

    Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Cho, Yong-Hoon, E-mail: yhc@kaist.ac.kr [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)] [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kwon, Soon-Yong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of) [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Jin Kim, Hee; Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Si Dang, Le [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)] [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2013-11-25

    Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

  12. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    SciTech Connect (OSTI)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  13. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

    SciTech Connect (OSTI)

    Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues [Normandie Université-Université de Rouen-ENSICAEN-UMR 6508 LaMIPS, Laboratoire commun CNRS-NXP-PRESTO-ENSICAEN-UCBN 2, rue de la Girafe BP 5120, F-14079 Caen (France)

    2014-09-14

    Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.

  14. High color rendering index white light emitting diodes fabricated from a combination of carbon dots and zinc copper indium sulfide quantum dots

    SciTech Connect (OSTI)

    Sun, Chun; Liu, Wenyan; Zhang, Xiaoyu; Zhang, Yu E-mail: wyu6000@gmail.com; Wang, Yu; Kalytchuk, Sergii; Kershaw, Stephen V.; Rogach, Andrey L.; Zhang, Tieqiang; Zhao, Jun; Yu, William W. E-mail: wyu6000@gmail.com

    2014-06-30

    In a line with most recent trends in developing non-toxic fluorescent nanomaterials, we combined blue emissive carbon dots with green and red emissive zinc copper indium sulfide (ZCIS) core/shell quantum dots (QDs) to achieve white light-emitting diodes (WLEDs) with a high color rendering index of 93. This indicates that ZCIS QDs, with their broad emission bands, can be employed to effectively make up the emission of carbon dots in the yellow and red regions to produce WLEDs in the wide region of color temperature by tuning the volume ratio of these constituting luminophores. Their electroluminescence characteristics including color rendering index, Commission Internationale de l'Eclairage (CIE) color coordinates, and color temperatures were evaluated as a function of forward current. The CIE-1931 chromaticity coordinates of the as-prepared WLEDs, exhibiting good stability, were slightly shifted from (0.321, 0.312) at 10?mA to (0.351, 0.322) at 30?mA, which was mainly caused by the different thermal quenching coefficients of carbon dots and ZCIS QDs.

  15. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

  16. Hierarchical hollow microsphere and flower-like indium oxide: Controllable synthesis and application as H{sub 2}S cataluminescence sensing materials

    SciTech Connect (OSTI)

    Cai, Pingyang, E-mail: cpyxx@163.com [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Bai, Wei, E-mail: weibaiscu@gmail.com [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Zhang, Lichun, E-mail: lichun0203@yahoo.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Song, Hongjie, E-mail: aurora811005@yahoo.com.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Yingying, E-mail: suyinging@scu.edu.cn [Analytical and Testing Center, Sichuan University, Chengdu, Sichuan 610064 (China)] [Analytical and Testing Center, Sichuan University, Chengdu, Sichuan 610064 (China); Lv, Yi, E-mail: lvy@scu.edu.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)

    2012-09-15

    Graphical abstract: Hierarchical hollow microsphere and flower-like In{sub 2}O{sub 3} were controllable fabricated through a novel and simple hydrothermal process, and the former showed superior cataluminescence sensing performance to H{sub 2}S. Highlights: ? In{sub 2}O{sub 3} hierarchical hollow sphere were prepared via a hydrothermal route. ? The growth process of In{sub 2}O{sub 3} hierarchical hollow sphere has been investigated. ? The sensor based on prepared In{sub 2}O{sub 3} shows good sensing performance to H{sub 2}S. -- Abstract: In the present work, In{sub 2}O{sub 3} hierarchical hollow microsphere and flower-like microstructure were achieved controllably by a hydrothermal process in the sodium dodecyl sulfate (SDS)-N,N-dimethyl-formamide (DMF) system. XRD, SEM, HRTEM and N{sub 2} adsorption measurements were used to characterize the as-prepared indium oxide materials and the possible mechanism for the microstructures formation was briefly discussed. The cataluminescence gas sensor based on the as-prepared In{sub 2}O{sub 3} was utilized to detect H{sub 2}S concentrations in flowing air. Comparative gas sensing results revealed that the sensor based on hierarchical hollow microsphere exhibited much higher sensing sensitivity in detecting H{sub 2}S gas than the sensor based on flower-like microstructure. The present gas sensor had a fast response time of 5 s and a recovery time of less than 25 s, furthermore, the cataluminescence intensity vs. H{sub 2}S concentration was linear in range of 2–20 ?g mL{sup ?1} with a detection limit of 0.5 ?g mL{sup ?1}. The present highly sensitive, fast-responding, and low-cost In{sub 2}O{sub 3}-based gas sensor for H{sub 2}S would have many practical applications.

  17. Relationship between selenium body burdens and tissue concentrations in fish exposed to coal ash at the Tennessee Valley Authority Kingston spill site

    SciTech Connect (OSTI)

    Mathews, Teresa J; Fortner, Allison M; Jett, Robert T; Peterson, Mark J; Carriker, Neil; Morris, Jesse G; Gable, Jennifer

    2014-01-01

    In December 2008, 4.1 million m3 of coal ash were released into the Emory and Clinch Rivers by the Tennessee Valley Authority (TVA) Kingston Fossil Plant. Coal ash contains several contaminants, including the bioaccumulative metalloid selenium (Se). Because Se is predominantly accumulated in aquatic organisms through dietary, rather than aqueous exposure, tissue-based toxicity thresholds for Se are currently being considered. The proposed threshold concentrations range between 4-9 g/g Se (dry wt.) in whole body fish, with a proposed fillet threshold of 11.8 g/g. In the present study we examined the spatial and temporal trends in Se bioaccumulation and examined the relationship between the Se content in fillets and in whole bodies of fish collected around the Kingston spill site to determine whether Se bioaccumulation was a significant concern at the ash spill site. While Se concentrations in fish (whole bodies and fillets) were elevated at sampling locations affected by the Kingston ash spill relative to reference locations, concentrations do not appear to be above risk thresholds and have not been increasing over the five year period since the spill. Our results are not only relevant to guiding the human health and ecological risk assessments at the Kingston ash spill site, but because of current national discussions on appropriate guidelines for Se in fish as well for the disposal of coal combustion wastes, our results are also relevant to the general understanding of Se bioaccumulation in contaminated water bodies.

  18. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (PMMA) resist with electron-beam lithography, followed by selective metal electroplating into the resist template. This approach is advantageous for low-melting-temperatur...

  19. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of Waterloo, California...

  20. Indium Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:on Openei |sourceAnd Central Mississippi | Open

  1. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion Measurement of Muon Neutrino andMechanical Behavior

  2. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion Measurement of Muon Neutrino andMechanical

  3. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1

  4. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical Behavior of

  5. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical Behavior

  6. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical BehaviorMechanical

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matter By SarahMODELING CLOUD1Mechanical

  8. VOLUME 76, NUMBER 8 P H Y S I C A L R E V I E W L E T T E R S 19 FEBRUARY 1996 Large Local-Field Corrections in Optical Rotatory Power of Quartz and Selenium

    E-Print Network [OSTI]

    Wilkins, John

    local fields are needed despite the vector character of light. A self-energy-corrected local-density for linearly polarized light. This phenomenon is described by the optical rotatory power r v nL 2 nR 2c, where-Field Corrections in Optical Rotatory Power of Quartz and Selenium Lars Jönsson,1 Zachary H. Levine,1,2 and John W

  9. 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1wileyonlinelibrary.com COMMUNICATION

    E-Print Network [OSTI]

    and the equilibrium SnS(g) vapour pressure The demand for low-cost and scalable renewable energy con- tinues to spur-per-year (GW/yr) levels,[1] while PV cells based on copper (indium, gallium) (diselenide, disulfide) (CIGS

  10. PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14:2543

    E-Print Network [OSTI]

    Anderson, Timothy J.

    PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14 Solar Energy, Inc., 5575 S. Houghton Rd, Tucson, AZ 85747, USA 7 Energy Photovoltaics, Inc., 276 Bakers transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers

  11. Effects of Series Resistance and Inductance on Solar Cell Admittance Measurements(a)

    E-Print Network [OSTI]

    Scofield, John H.

    on a variety of 0.43 cm2 area, copper indium gallium diselenide (CIGS) polycrystalline thin film solar cellsEffects of Series Resistance and Inductance on Solar Cell Admittance Measurements(a) John H Energy Materials and Solar Cells on April 17, 1994) Admittance measurements have been performed

  12. 2006 Minerals Yearbook U.S. Department of the Interior

    E-Print Network [OSTI]

    ) solar cells that would yield high production throughput. Flexible CIGS solar cells could All refined computers (15%), and cell phones (11%). The LCD market was expected to show considerable growth within to develop a low-cost manufacturing process for flexible thin film copper indium gallium diselenide (CIGS

  13. When you think of the film industry, what comes to mind? Entertainment. In this issue you will discover how films not only bring us the latest adventures but also are being sculptured at

    E-Print Network [OSTI]

    Demirel, Melik C.

    rooftop market. Solyndra uses a copper-indium-gallium-diselenide (CIGS) absorber layer in its solar cell to create revolutionary optics, semiconductors, medical devices, and solar cells. Spring 2009 In This Issue information, visit: www.jbg3.net Alumni Spotlight Phil Kraus (B.S. '93) is the director of technology at solar-cell

  14. NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells.

    E-Print Network [OSTI]

    NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells indium gallium diselenide (CIGS) solar cell is zinc oxide (ZnO). The problem is that unprotected Zn improve humidity resistance in CIGS solar cells. Key Result This new method yields increased product

  15. Structural and electronic properties of -In2X3 (X=O, S, Se, Te) using ab initio calculations

    E-Print Network [OSTI]

    Khare, Sanjay V.

    by NREL [1]. CdS is one of the important layers in fabricating CIGS solar cells but poses ecological and environmentally friendly copper­indium­gallium­selenide solar cells and molecules. Here we have studied been investigated. © 2011 Elsevier B.V. All rights reserved. Introduction Cu­In­Ga­S (CIGS) based solar

  16. Layer-By-Layer Self-Assembly of CIGS Nanoparticles and Polymers for All-Solution Processable Low-Cost, High-Efficiency Solar Cells

    E-Print Network [OSTI]

    Zhou, Yaoqi

    -Cost, High-Efficiency Solar Cells Tung Ho1 , Robert Vittoe3 , Namratha Kakumanu2 , Sudhir Shrestha2-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202 Thin film solar cells made from copper indium gallium thereby affecting solar cell efficiency. This research aims to study various polymer materials to replace

  17. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  18. MATERIAL TESTING OF LIQUID METAL

    E-Print Network [OSTI]

    Huang, Wei

    with the development and improvement of renewable energy technology. On a more personal note, he enjoys most shades vacuum chamber at NASA Langley Research Center. Two types of LMSGs were tested: indium-gallium and mercury. Testing showed that both types were functional after being subjected to extreme vacuum

  19. Alternative Energy Technologies Solar Power

    E-Print Network [OSTI]

    Scott, Christopher

    #12;Alternative Energy Technologies Solar Power Photovoltaics Concentrating Solar Power (CSP) Power;Concentrating Solar Power (CSP) Reflector material is Aluminum or Silver Tube material ..... Several possible gauges, gas sensors. Light-emitting diodes (LED's) Power amplifiers for cell phones Indium Gallium #12

  20. Recent developments in high-efficiency PV cells

    SciTech Connect (OSTI)

    Deb, S.

    2000-05-22

    Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30{percent}) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP{sub 2}). The high-efficiency GaAs-based solar cells are being produced on a commercial scale, particularly for space applications. Efficiencies in the range of 18{percent} to 24{percent} have been achieved in traditional silicon-based devices fabricated from both multicrystalline and single-crystal materials. Major advances in efficiency have also been made on various thin-film solar cells based on amorphous silicon (aSi:H), copper gallium indium diselenide (CIGS), and cadmium telluride materials. This paper gives a brief overview of the recent progress in PV cell efficiencies based on these materials and devices.

  1. Gallium composition dependence of crystallographic and thermoelectric properties in polycrystalline type-I Ba{sub 8}Ga{sub x}Si{sub 46-x} (nominal x=14-18) clathrates prepared by combining arc melting and spark plasma sintering methods

    SciTech Connect (OSTI)

    Anno, Hiroaki; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 ; Yamada, Hiroki; Nakabayashi, Takahiro; Hokazono, Masahiro; Shirataki, Ritsuko; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075

    2012-09-15

    The gallium composition dependence of crystallographic and thermoelectric properties in polycrystalline n-type Ba{sub 8}Ga{sub x}Si{sub 46-x} (nominal x=14-18) compounds with the type-I clathrate structure is presented. Samples were prepared by combining arc melting and spark plasma sintering methods. Powder x-ray diffraction, Rietveld analysis, scanning electron microscopy, and energy-dispersive x-ray spectroscopy show that the solubility limit of gallium in the type-I clathrate phase is close to x=15, which is slightly higher than that for a single crystal. The carrier concentration at room temperature decreases from 2 Multiplication-Sign 10{sup 21} cm{sup -3} to 4 Multiplication-Sign 10{sup 20} cm{sup -3} as the Ga content x increases. The Seebeck coefficient, the electrical conductivity, and the thermal conductivity vary systematically with the carrier concentration when the Ga content x varies. The effective mass (2.0m{sub 0}), the carrier mobility (10 cm{sup 2} V{sup -1} s{sup -1}), and the lattice thermal conductivity (1.1 W m{sup -1} K{sup -1}) are determined for the Ga content x=14.51. The dimensionless thermoelectric figure of merit ZT is about 0.55 at 900 K for the Ga content x=14.51. The calculation of ZT using the experimentally determined material parameters predicts ZT=0.8 (900 K) at the optimum carrier concentration of about 2 Multiplication-Sign 10{sup 20} cm{sup -3}. - Graphical abstract: The gallium composition dependence of crystallographic and thermoelectric properties is presented on polycrystalline n-type Ba{sub 8}Ga{sub x}Si{sub 46-x} with the type-I clathrate structure prepared by combining arc melting and spark plasma sintering methods. The thermoelectric figure of merit ZT reaches 0.55 at 900 K due to the increase in the Ga content (close to x=15), and a calculation predicts further improvement of ZT at the optimized carrier concentration. Highlights: Black-Right-Pointing-Pointer Crystallographic properties of Ba{sub 8}Ga{sub x}Si{sub 46-x} clathrates are characterized. Black-Right-Pointing-Pointer Arc melting and spark plasma sintering process enables increase of Ga content. Black-Right-Pointing-Pointer We elucidate the Ga composition dependence of thermoelectric properties. Black-Right-Pointing-Pointer Thermoelectric figure of merit ZT is improved due to the increased Ga content. Black-Right-Pointing-Pointer Calculation predicts a potential ZT=0.8 at 900 K at optimized carrier concentration.

  2. Superconductive silicon nanowires using gallium beam lithography.

    SciTech Connect (OSTI)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  3. Electronic properties of gallium nitride nanowires

    E-Print Network [OSTI]

    Yoon, Joonah

    2008-01-01

    This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

  4. Efficient wireless charging with gallium nitride FETs

    E-Print Network [OSTI]

    Yeh, Theresa (Theresa I.)

    2014-01-01

    Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of ...

  5. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect (OSTI)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of ?111?-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  6. Growth process for gallium nitride porous nanorods

    DOE Patents [OSTI]

    Wildeson, Isaac Harshman; Sands, Timothy David

    2015-03-24

    A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

  7. Interactions of gallium with zircaloy cladding 

    E-Print Network [OSTI]

    Mitchell, Lee Josey

    1999-01-01

    A mastering system was constructed and installed on the current low energy accelerator of the Ion Beam Laboratory in the Department of Nuclear Engineering. Galium was implanted into heated zircaloy targets at nuances of 3x10ą?, 1x10ą? and 1x10...

  8. Self- and zinc diffusion in gallium antimonide

    E-Print Network [OSTI]

    Nicols, Samuel Piers

    2002-01-01

    into building gas centrifuges to enrich uranium mined at itsspent uranium in nuclear reactors. The gas centrifuges are

  9. Influence of different sulfur to selenium ratios on the structural and electronic properties of Cu(In,Ga)(S,Se){sub 2} thin films and solar cells formed by the stacked elemental layer process

    SciTech Connect (OSTI)

    Mueller, B. J.; Zimmermann, C.; Haug, V. Koehler, T.; Zweigart, S.; Hergert, F.; Herr, U.

    2014-11-07

    In this study, we investigate the effect of different elemental selenium to elemental sulfur ratios on the chalcopyrite phase formation in Cu(In,Ga)(S,Se){sub 2} thin films. The films are formed by the stacked elemental layer process. The structural and electronic properties of the thin films and solar cells are analyzed by means of scanning electron microscopy, glow discharge optical emission spectrometry, X-ray diffraction, X-ray fluorescence, Raman spectroscopy, spectral photoluminescence as well as current-voltage, and quantum efficiency measurements. The influence of different S/(S+Se) ratios on the anion incorporation and on the Ga/In distribution is investigated. We find a homogenous sulfur concentration profile inside the film from the top surface to the bottom. External quantum efficiency measurements show that the band edge of the solar cell device is shifted to shorter wavelength, which enhances the open-circuit voltages. The relative increase of the open-circuit voltage with S/(S+Se) ratio is lower than expected from the band gap energy trend, which is attributed to the presence of S-induced defects. We also observe a linear decrease of the short-circuit current density with increasing S/(S+Se) ratio which can be explained by a reduced absorption. Above a critical S/(S+Se) ratio of around 0.61, the fill factor drops drastically, which is accompanied by a strong series resistance increase which may be attributed to changes in the back contact or p-n junction properties.

  10. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M.; Mika, A.; S?k, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  11. Indium Antimonide Nanowires: Synthesis, Characterization, and Applications

    E-Print Network [OSTI]

    Penchev, Miroslav Valentinov

    2012-01-01

    2 O 3 deposited by atomic layer deposition. Source and drainthe nanowire by atomic layer deposition (ALD), followed bydevices, by atomic layer deposition carried at 250 şC. The

  12. Organic Light Emitting Diodes Using a Ga:ZnO Anode

    SciTech Connect (OSTI)

    Berry, J. J.; Ginley, D. S.; Burrows, Paul E.

    2008-05-12

    We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are then compared. Relative to ITO, the GZO anodes have slightly better sheet resistance and transparency in the visible spectral region. Device data suggest GZO results in more effective hole injection into an aromatic triamine hole transporting layer. Indium free anodes are expected toimprove OLED stability while lowering the cost per unit area, crucial for OLED based lighting applications.

  13. Interplay of light transmission and catalytic exchange current in photoelectrochemical systems

    SciTech Connect (OSTI)

    Fountaine, Katherine T.; Lewerenz, Hans J.; Atwater, Harry A.

    2014-10-27

    We develop an analytic current-voltage expression for a variable junction photoelectrochemical (PEC) cell and use it to investigate and illustrate the influence of the optical and electrical properties of catalysts on the optoelectronic performance of PEC devices. Specifically, the model enables a simple, yet accurate accounting of nanostructured catalyst optical and electrical properties through incorporation of an optical transmission factor and active catalytic area factor. We demonstrate the utility of this model via the output power characteristics of an exemplary dual tandem solar cell with indium gallium phosphide and indium gallium arsenide absorbers with varying rhodium catalyst nanoparticle loading. The approach highlights the importance of considering interactions between independently optimized components for optimal PEC device design.

  14. Recycling Of Cis Photovoltaic Waste

    DOE Patents [OSTI]

    Drinkard, Jr., William F. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Goozner; Robert E. (Charlotte, NC)

    1998-07-14

    A method for extracting and reclaiming metals from scrap CIS photovoltaic cells and associated photovoltaic manufacturing waste by leaching the waste with dilute nitric acid, skimming any plastic material from the top of the leaching solution, separating glass substrate from the leachate, electrolyzing the leachate to plate a copper and selenium metal mixture onto a first cathode, replacing the cathode with a second cathode, re-electrolyzing the leachate to plate cadmium onto the second cathode, separating the copper from selenium, and evaporating the depleted leachate to yield a zinc and indium containing solid.

  15. Modeling and simulation of CuIn{sub 1?x}Ga{sub x}Se{sub 2} based thin film solar cell

    SciTech Connect (OSTI)

    Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

    2014-04-24

    In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

  16. SOLAR SEMINAR SERIES S P R I N G 2 0 1 3 P H O T O V O L T A I C S E M I N A R S E R I E S

    E-Print Network [OSTI]

    Ginzel, Matthew

    challenge for the success of copper indium gallium selenide (CIGS) photovoltaic cells. Co-evaporation yieldsSOLAR SEMINAR SERIES S P R I N G 2 0 1 3 P H O T O V O L T A I C S E M I N A R S E R I E S BILLY J spanning more than 30 years in the solar industry. He is an expert in the business and science

  17. NREL Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01

    Many scientists once believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. However, researchers at the National Renewable Energy Laboratory (NREL) thought differently, and they employed GaInP in a material combination that allowed the multijunction cell to flourish. The multijunction cell is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic products.

  18. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  19. Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates

    DOE Patents [OSTI]

    Eser, Erten; Fields, Shannon

    2012-05-01

    A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

  20. Observation of Liquid Metal Actuation in Microfluidic Channels and Implementation to Tunable RF Inductors 

    E-Print Network [OSTI]

    Dogan, Yusuf

    2014-07-18

    an excitement in regard to being by me in all the processes of building my thesis. Her support on research as well as on my career has been priceless to me. vii NOMENCLATURE LM Liquid Metal EGaIn Eutectic Gallium Indium RF Radio Frequency HCI....2 Actuation of LM in Closed Loop Channel ......................................................... 26 2.2.1 Design and Fabrication ......................................................................... 26 2.2.2 Experimental Steps and Results...

  1. CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar

    E-Print Network [OSTI]

    Sites, James R.

    CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag 80523 ABSTRACT Copper indium gallium sulfide, CuIn1-xGaxS2 (CIGS2) solar cells prepared with chemical/heterojunction partner/ ZnO/Cr/Ag contact fingers solar cells of area ~0.44 cm 2 were fabricated at FSEC

  2. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  3. RESEARCH ARTICLE Electrocoagulation of colloidal biogenic selenium

    E-Print Network [OSTI]

    -1970s, Lake Belews in North Carolina was affected by Se oxyanions released by a coal-fired power plant /Accepted: 9 September 2014 /Published online: 20 September 2014 # Springer-Verlag Berlin Heidelberg 2014

  4. Photovoltaic effect of lead-free (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} ferroelectric thin film using Pt and indium tin oxide top electrodes

    SciTech Connect (OSTI)

    Seok Woo, Won; Sik Won, Sung; Won Ahn, Chang; Chae, Song A; Won Kim, Ill, E-mail: kimiw@mail.ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of); Ullah, Aman [Department of Physics, University of Science and Technology, Bannu, Khyber Pakhtunkhwa (Pakistan)

    2014-01-21

    We have grown a Bi-layer structure (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} (NKBiT) ferroelectric thin film on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(100) substrate by using the chemical solution deposition method and deposited two kinds of thin Pt and indium tin oxide (ITO) top electrodes. The photovoltaic behaviors of Pt/NKBiT/Pt and ITO/NKBit/Pt capacitors were investigated over the wavelength range of 300–500?nm. When NKBiT thin film is illuminated by the corresponding wavelength of the film's energy band gap (E{sub g}), a photocurrent is generated due to the Schottky barrier between electrode and film, and an internal electric field is originated by the depolarization field. The maximum photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor in the poled-up state are obtained as 45.75?nA/cm{sup 2} and 0.035%, respectively, at 352?nm. The photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor increased to 3.5 times higher than that of the Pt/NKBiT/Pt capacitor.

  5. Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

    SciTech Connect (OSTI)

    Chen, J. C. H. Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Das Gupta, K.; Sfigakis, F.; Ritchie, D. A.; Trunov, K.; Wieck, A. D.; Reuter, D.

    2015-05-04

    We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al{sub 0.34}Ga{sub 0.66}As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.

  6. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Structural vacancies are a source of numerous interesting structural, electronic, and optical properties, and materials scientists often rely them as an important building...

  7. Hybrid Solar Cells based on Gallium Arsenide Nanopillars

    E-Print Network [OSTI]

    Haddad, Michael Anthony

    2014-01-01

    Polymer-Based Organic Solar Cells. Chemical Reviews, 2007.et al. , Hybrid Heterojunction Solar Cell Based on Organic–styrenesulfonate) hybrid solar cells. Nanotechnology, 2010.

  8. Ultra-low threshold Gallium Nitride photonic crystal nanobeam laser

    E-Print Network [OSTI]

    Niu, Nan; Woolf, Alexander; Wang, Danquing; Zhu, Tongtong; Quan, Qimin; Oliver, Rachel A.; Hu, Evelyn L.

    2015-06-10

    to achieve lasing in the QW structures, heating of the nanobeam structures and effects such as free carrier absorption may explain the lower percentage of successful lasing in the QW devices. For 5 fQW nanobeams that were analyzed in detail, the lasing... with excellent performance. Because of their compact size and low thresholds, these devices are excellent candidates for efficient, on-chip optical sources in the blue portion of the spectrum. Corresponding Author *email: nanniu...

  9. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect (OSTI)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

  10. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown...

    Broader source: Energy.gov (indexed) [DOE]

    Project deliverables Reproducible monocrystalline growth process with sustainable film growth rate of at least 0.5mmhr scalable to >100mm substrate diameter and film...

  11. Broadband electrooptic modulators based on gallium arsenide materials

    E-Print Network [OSTI]

    Shamir, Orit A

    2012-01-01

    Optical Arbitrary Waveform Generation (OAWG) combines frequency combs and frequency-by- frequency pulse shapers to synthesize optical waveforms. The OAWG technique has a wide variety of applications, ranging from high ...

  12. Self-aligned submicron gate length gallium arsenide MESFET 

    E-Print Network [OSTI]

    Huang, Hsien-Ching

    1987-01-01

    38 21. Proximity cap annealing . 22. Temperature profile of post implant anneal 46 47 23. 24. 25. 26. 27. 28. 29. 30. "Pits" or holes in GaAs post implant anneal without sacrificial cap Silicon monoxide source (bafile box) used.... 16(b)). The bottom resist layer is then further etched in the oxygen plasma to produce undercutting for the desire gate structure. The amount of undercut is determined by the desired length of the gate and is the width of the remaining resist...

  13. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    could accelerate the adoption of energy-efficient GaN-based lighting and high-voltage power switching devices, ignite new market applications, and reduce U.S. power...

  14. Superconductivity in gallium-substituted Ba8Si46 clathrates 

    E-Print Network [OSTI]

    Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

    2007-01-01

    We report a joint experimental and theoretical investigation of superconductivity in Ga-substituted type-I silicon clathrates. We prepared samples of the general formula Ba8Si46-xGax, with different values of x. We show that Ba8Si40Ga6 is a bulk...

  15. Rutherford backscattering analysis of gallium implanted 316 stainless steel 

    E-Print Network [OSTI]

    Ortensi, Javier

    2000-01-01

    Ion implantation of Ga ions into 316 stainless steel was performed at fluences ranging from 8x10ą? to 10ą? ions/cm˛. The depth profile of Ga in the steel was analyzed via Rutherford Backscattering and ToFSIMS. The surface effects were...

  16. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Financing Tool Fits the BillDepartment ofEnergyJoe25,

  17. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-Inspired SolarAbout /Two0 -Using supercritical carbon dioxideVIDEO:

  18. Convective Turbulence in Liquid Gallium and Sodium | Argonne Leadership

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  19. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  20. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking WithTelecentric viewing systemVacancy announcementsVacancy-Induced

  1. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking WithTelecentric viewing systemVacancy

  2. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking WithTelecentric viewing systemVacancyVacancy-Induced Nanoscale Wire

  3. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking WithTelecentric viewing systemVacancyVacancy-Induced Nanoscale

  4. Electrochemical Solution Growth: Gallium Nitride Crystal Growth - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansas Nuclear ProfileMultiferroic 2015ProgramWoodwardand

  5. High-efficiency solar cell and method for fabrication

    DOE Patents [OSTI]

    Hou, Hong Q. (Albuquerque, NM); Reinhardt, Kitt C. (Albuquerque, NM)

    1999-01-01

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

  6. High-efficiency solar cell and method for fabrication

    DOE Patents [OSTI]

    Hou, H.Q.; Reinhardt, K.C.

    1999-08-31

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

  7. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

    SciTech Connect (OSTI)

    Sundaram, S.; El Gmili, Y.; Bonanno, P. L. [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, R.; Li, X.; Voss, P. L.; Ougazzaden, A. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Pantzas, K.; Patriarche, G. [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Orsal, G.; Salvestrini, J. P., E-mail: salvestr@metz.supelec.fr [Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz (France); Troadec, D. [Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille (France); Cai, Z.-H. [Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-10-28

    Uniform, dense, single-phase, 150?nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150?nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535?nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

  8. Multi-spectral optical absorption in substrate-free nanowire arrays

    SciTech Connect (OSTI)

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray; Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet

    2014-09-22

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  9. Electron transport in the III-V nitride alloys

    SciTech Connect (OSTI)

    Foutz, B.E.; O'Leary, S.K.; Shur, M.S.; Eastman, L.F.

    1999-07-01

    The authors study electron transport in the alloys of aluminum nitride and gallium nitride and alloys of indium nitride and gallium nitride. In particular, employing Monte Carlo simulations they determine the velocity-field characteristics associated with these alloys for various alloy compositions. They also determine the dependence of the low-field mobility on the alloy composition. They find that while the low-field mobility is a strong function of the alloy composition, the peak and saturation drift velocities exhibit a more mild dependence. Transient electron transport is also considered. They find that the velocity overshoot characteristic is a strong function of the alloy composition. The device implications of these results are discussed.

  10. Fabrication, structure and mechanical properties of indium nanopillars

    E-Print Network [OSTI]

    Lee, Gyuhyon

    2010-01-01

    followed by the electroplating fabrication method. TheCompression test; Electroplating; Yield phenomena 1.were fabricated via an electroplating method. 2. Procedure

  11. Integration of indium phosphide based devices with flexible substrates

    E-Print Network [OSTI]

    Chen, Wayne Huai

    2011-01-01

    et al. , "Patterning, electroplating and removal of SU-8D. Sood. “Patterning, electroplating and removal of SU-8

  12. Indium Phosphide Planar Integrated Optics Comes of Age Jens Noeckel

    E-Print Network [OSTI]

    Nöckel, Jens Uwe

    -eighties, when fiber cables started to replace copper cables in the telecom network. Planar lightwave circuits and processing of optical signals, have finally been pressed into service. Demand for many optical components now

  13. Magnetism and spin transport studies on indium tin oxide

    E-Print Network [OSTI]

    Hakimi, Ali Moraad Heydar

    2011-07-12

    : Preliminary results . . . . . 205 10.7 Summary and Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . 208 11 Summary and Conclusions 212 12 Future Directions and Outlook 214 12.1 TEM study of the DMO... ] over one hundred years ago. Since then, these materials have formed integral components in a wide variety of modern day optoelectronic applications such as liquid crystal displays and transparent electrodes of solar cells. In order to achieve...

  14. DECAY STUDIES OF THE HIGHLY NEUTRON-DEFICIENT INDIUM ISOTOPES

    E-Print Network [OSTI]

    Wouters, J.M.

    2010-01-01

    w')/cp' n S(w,w+v ) = {[(wTv ) -m.c ]/[w -m.c ]} ' x{(w+v )/f(w„,Z) =/ u m c e ,F(+Z,wTv„)S(w,w+v o 1(w o -w) pwdw c — o

  15. Indium Phosphide Nanocrystals Formed in Silica by Sequential...

    Office of Scientific and Technical Information (OSTI)

    Resource Type: Journal Article Resource Relation: Journal Name: Surface and Coatings Technology; Journal Volume: 196; Journal Issue: 1-3 Research Org: Oak Ridge National...

  16. Integration of indium phosphide based devices with flexible substrates

    E-Print Network [OSTI]

    Chen, Wayne Huai

    2011-01-01

    Brandon, W. West, L. Zhou et al. , “Flexible electronics forspace applications,” Flexible Electronics, 219–230 (2004). [1.1 Conventional flexible electronics Flexible substrates

  17. Spectroscopic properties of colloidal indium phosphide quantum wires

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Wang, Fudong; Yu, Heng; Li, Jingbo; Hang, Qingling; Zemlyanov, Dmitry; Gibbons, Patrick C.; Wang, Lin-Wang; Janes, David B.; Buhro, William E.

    2008-07-11

    Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photo-oxidation, without a significant influence on quantum-wire photoluminescence. However, photo-oxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation, and that colloidal quantum wires have intrinsically low photoluminescence efficiencies.

  18. Spectroscopic properties of colloidal indium phosphide quantum wires

    E-Print Network [OSTI]

    Weng, Fudong

    2008-01-01

    experimental results for InP quantum dots and wires, and tohave been achieved with InP quantum dots. 1,2 Therefore, ahas proven successful for InP quantum dots. 1,2 We show that

  19. Ohmic contact metallization on p-type indium phosphide 

    E-Print Network [OSTI]

    Park, Moonho

    1993-01-01

    . However, the strong reactions between Au and InP result in deep penetration of Au into the InP layer. This deep penetration is not desirable for most device application In this study, I report a new approach to form shallow contacts on p-InP by utilizing...

  20. Indium Growth and Island Height Control on Si Submonolayer Phases

    SciTech Connect (OSTI)

    Chen, Jizhou

    2009-05-09

    Nanotechnology refers any technique that involves about object with nanoscale (10{sup -9} m) or even smaller. It has become more and more important in recently years and has changed our world dramatically. Most of modern electronic devices today should thanks to the miniaturizing driven by development of nanotechnology. Recent years, more and more governments are investing huge amount of money in research related to nanotechnology. There are two major reasons that nanostructure is so fascinate. The first one is the miniaturizing. It is obvious that if we can make products smaller without losing the features, we can save the cost and increase the performance dramatically. For an example, the first computer in the world, ENIAC, which occupied several rooms, is less powerful than the cheapest calculator today. Today's chips with sizes of less than half an inch contain millions of basic units. All these should thank to the development of nanotechnology. The other reason is that when we come to nanoscale, there are many new effects due to the quantum effect which can't be found in large systems. For an example, quantum dots (QDs) are systems which sizes are below 1{micro}m(10{sup -6}m) and restricted in three dimensions. There are many interesting quantum effects in QDs, including discrete energy levels, and interdot coupling. Due to these properties and their small sizes, QDs have varies potential applications such as quantum computing, probe, light emitting device, solar cells, and laser. To meet the requirement of the nanoelectrical applications, the QDs must be grown highly uniformly because their property is highly dependent on their sizes. The major methods to grow uniform QDs include epitaxial, and lithograph. Lithography is a process to make patterns on a thin film by selectively removing certain parts of the film. Using this method, people have good control over size, location and spacing of QDs. For an example, the Extreme ultraviolet lithography (EUVL) have a wave length of 13.4nm so it can curve on the surface of an sample to make structure as small as the order of 10nm. however, lithograph usually causes permanent damages to the surface and in many cases the QDs are damaged during the lithograph and therefore result in high percentage of defects. Quantum size effect has attracted more and more interests in surface science due to many of its effects. One of its effects is the height preference in film growing and the resulting possibility of uniformly sized self-assemble nanostructure. The experiment of Pb islands on In 4x1 phase shows that both the height and the width can be controlled by proper growth conditions, which expands the growth dimensions from 1 to 2. This discover leads us to study the In/Pb interface. In Ch.3, we found that the Pb islands growing on In 4x1-Si(111) surface which have uniform height due to QSE and uniform width due to the constriction of In 4x1 lattice have unexpected stability. These islands are stable in even RT, unlike usual nanostructures on Pb/Si surface which are stable only at low temperature. Since similar structures are usually grown at low temperature, this discovery makes the grown structures closer to technological applications. It also shows the unusual of In/Pb interface. Then we studied the In islands grown on Pb-{alpha}-{radical}3x{radical}3-Si(111) phase in Ch.4. These islands have fcc structure in the first few layers, and then convert to bct structure. The In fcc islands have sharp height preference due to QSE like Pb islands. However, the preferred height is different (7 layer for Pb on Si 7x7 and 4 layer for Pb on In 4x1), due to the difference of interface. The In islands structure prefers to be bct than fcc with coverage increase. It is quantitatively supported by first-principle calculation. Unexpectedly, the In islands grown on various of In interfaces didn't show QSE effects and phase transition from fcc and bct structures as on the Pb-{alpha} interface (Ch.6). In g(s) curve there is no clear oscillations in the g(s) curve as the In on Pb-{alpha} phase. This

  1. DECAY STUDIES OF THE HIGHLY NEUTRON-DEFICIENT INDIUM ISOTOPES

    E-Print Network [OSTI]

    Wouters, J.M.

    2010-01-01

    unpublished (1979). (Mo 80a) D. M. Moltz, R. A. Gough, M. S.Analyzer) Laboratory to (Mo 80a, the Berkeley a helium-jetcone (Go 72, Ho 79b, Ho 80a). This constraint from

  2. Indium Phosphide Nanocrystals Formed in Silica by Sequential Ion

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(Journal Article)lasers(JournalatBaBar (Thesis/Dissertation) | SciTech6(Conference)

  3. Indium Phosphide Polycrystalline Films on Metal Foil for PV Applications -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACT EVALUATION PLAN FOR THE SITE-218inper Thousand CubicCampaign ForEnergy

  4. Commercialization of High Efficiency Low Cost CIGS Technology Based on Electroplating: Final Technical Progress Report, 28 September 2007 - 30 June 2009

    SciTech Connect (OSTI)

    Basol, B.

    2010-08-01

    This report describes SoloPower's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. The project focused on SoloPower's electrodeposition-based copper indium gallium (di)selenide (CIGS) technology. Under this subcontract, SoloPower improved the quality of its flexible metal substrates, increased the size of its solar cells from 0.5 cm2 to 120 cm2, increased the small-area cell efficiencies from near 11% to near 14%, demonstrated large-area cells, and developed a module manufacturing process.

  5. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  6. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

    2006-04-04

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  7. NREL Scientists Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01

    Before 1984, many scientists believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. One researcher at the Solar Energy Research Institute (SERI) thought differently. His name was Jerry Olson, and his innovative thinking changed solar history. Olson identified a material combination that allowed the multijunction cell to flourish. It is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic (CPV) products.

  8. The state of the art of thin-film photovoltaics

    SciTech Connect (OSTI)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  9. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

    2004-07-13

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  10. CX-004886: Categorical Exclusion Determination | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l DeInsulationInformation SessionResearch onCopper Indium Gallium

  11. Metals Production Requirements for Rapid Photovoltaics Deployment

    E-Print Network [OSTI]

    Kavlak, Goksin; Jaffe, Robert L; Trancik, Jessika E

    2015-01-01

    If global photovoltaics (PV) deployment grows rapidly, the required input materials need to be supplied at an increasing rate. In this paper, we quantify the effect of PV deployment levels on the scale of metals production. For example, we find that if cadmium telluride {copper indium gallium diselenide} PV accounts for more than 3% {10%} of electricity generation by 2030, the required growth rates for the production of indium and tellurium would exceed historically-observed production growth rates for a large set of metals. In contrast, even if crystalline silicon PV supplies all electricity in 2030, the required silicon production growth rate would fall within the historical range. More generally, this paper highlights possible constraints to the rate of scaling up metals production for some PV technologies, and outlines an approach to assessing projected metals growth requirements against an ensemble of past growth rates from across the metals production sector. The framework developed in this paper may be...

  12. Hydrological and Geochemical Investigations of Selenium Behavior at Kesterson Reservoir

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    Ecological Characterization of Kesterson Reservoir. AnnualEcological Characterization of Kesterson Reservoir. Annual

  13. Development of a small selenium barrier layer photovoltaic cell 

    E-Print Network [OSTI]

    Pruett, George Richard

    1954-01-01

    ~ NL ~ "eh* I, I ~ ye~I ~ $8 843050 ~X Agese t l%ysse 4 Tehlo L Agl QNLSN& P tglWl ~ ARALU 0 p ~ ~ ~ ~ 5 QII4NiOONd504N' OISCES o ~ ~ ~ e ~ ~ + ~ ~ 8IAlt44WLO CIQ, e s s ~ e s i ~ s y ~ ~ ~ 5 4 0 ~ 4 0 4pp0%% ~ ~ ~ ~ ~ k ~ + l ~ lht44 At 801W...

  14. Macro-and Microscale Investigation of Selenium Speciation in Blackfoot

    E-Print Network [OSTI]

    , Department of Plant, Soils, and Entomological Sciences, and Department of Food Science and Toxicology, P, and suggested that the predominant species were Se(-II) species associated with recalcitrant organic matter, and Se(IV) species tightly bound to organic materials. This information can be used to predict

  15. Hydrological and Geochemical Investigations of Selenium Behavior at Kesterson Reservoir

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    Gas-phase porosities varied between individual aggregates from 0.00 to 0.40, and were maintained relatively constant

  16. Grain Accumulation of Selenium Species in Rice (Oryza sativa L.)

    SciTech Connect (OSTI)

    Carey, Anne-Marie; Scheckel, Kirk G.; Lombi, Enzo; Newville, Matt; Choi, Yongseong; Norton, Gareth J.; Price, Adam H.; Meharg, Andrew A.

    2012-09-05

    Efficient Se biofortification programs require a thorough understanding of the accumulation and distribution of Se species within the rice grain. Therefore, the translocation of Se species to the filling grain and their spatial unloading were investigated. Se species were supplied via cut flag leaves of intact plants and excised panicle stems subjected to a {+-} stem-girdling treatment during grain fill. Total Se concentrations in the flag leaves and grain were quantified by inductively coupled plasma mass spectrometry. Spatial accumulation was investigated using synchrotron X-ray fluorescence microtomography. Selenomethionine (SeMet) and selenomethylcysteine (SeMeSeCys) were transported to the grain more efficiently than selenite and selenate. SeMet and SeMeSeCys were translocated exclusively via the phloem, while inorganic Se was transported via both the phloem and xylem. For SeMet- and SeMeSeCys-fed grain, Se dispersed throughout the external grain layers and into the endosperm and, for SeMeSeCys, into the embryo. Selenite was retained at the point of grain entry. These results demonstrate that the organic Se species SeMet and SeMeSeCys are rapidly loaded into the phloem and transported to the grain far more efficiently than inorganic species. Organic Se species are distributed more readily, and extensively, throughout the grain than selenite.

  17. Hydrological and Geochemical Investigations of Selenium Behavior at Kesterson Reservoir

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    on trace metals in soils, sewage sludges, and sludge-treatedproducts from soil and sewage sludge. Science (Washington,

  18. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01

    Development of White LED Based PV Lighting Systems," Solarstate Lighting: Failure Analysis of White LEDs," J. Cryst.scale indicator lighting, to using green LEDs for traffic

  19. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01

    Converted White-Light-Emitting Diodes," Jap. J. Appl.in Packaging High Power Light Emitting Diode Arrays," Appl.doped III-N Light-Emitting Diodes," Appl. Phys. Lett. , 84 (

  20. Commercialization of gallium nitride nanorod arrays on silicon for solid-state lighting

    E-Print Network [OSTI]

    Wee, Qixun

    2008-01-01

    One important component in energy usage is lighting, which is currently dominated by incandescent and fluorescent lamps. However, due to potentially higher efficiencies and thus higher energy savings, solid-state lighting ...

  1. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    process: after sample pair wax wetting. .. 311 Figureprocess: after PMGI and wax dissolution and composite1. Picture of an example wax wetting two microscope slide

  2. Gallium Arsenide-Based Readout Electronics Thomas J. Cunningham and Eric R. Fossum

    E-Print Network [OSTI]

    Fossum, Eric R.

    to carrier freeze-out, so we expect GaAs readouts to produce less noise than silicon readouts at very low that operate at cryogenic temperatures. Presently, GaAs readout technology can draw from several types

  3. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    Mn),” Zeitschrift für Metallkunde, vol. 93, no. 9, pp. 885-Mn),” Zeitschrift für Metallkunde, vol. 93, no. 9, pp. 885-measurements,” Zeitschrift für Metallkunde, vol. 61, no. 5,

  4. Calculation of infrared plasma reflection spectra of inhomogeneously doped P-type gallium arsenide

    SciTech Connect (OSTI)

    CHEN Wei-xi; LI Guo-hua; NIU Jin-zhen; GUO Chang-zhi

    1982-01-01

    The influence of the surface concentration and concentration profile of free carriers, the layer thickness and free carrier concentration of the homogeneous substrate on the infrared plasma reflection spectra of inhomogeneously doped P-type GaAs layers is analyzed by computer solutions of differential equations for the optical admittance. Computed spectra are reported for four different profiles and several substrate concentrations. Methods for evaluation of the measured reflection spectra and the limitation of this technique are discussed.

  5. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    Grissom was always a friendly helping hand in the cleanroom.maintenance to various cleanroom equipment, in addition toenvironment of the old ITL cleanroom facility at UCSD.

  6. Luminescence dynamics and waveguide applications of europium doped gallium nitride powder

    E-Print Network [OSTI]

    Lipson, Michal

    of obtaining a powder form of RE doped GaN involve a combustion reaction15 or an ammonolysis of freeze onto the Si substrate, obtained using a HeCd laser 325 nm . A pulsed N2 laser 337.1 nm with 4 ns pulse

  7. Temperature-dependent luminescence of Ce3+ in gallium-substituted

    E-Print Network [OSTI]

    Walker, D. Greg

    were prepared via a simple combustion synthe- sis method and had the formula Y2.97Ce0.03 3 Al1-xGax 5O width of 0.1 nm. The pulse width was 4ns at a characteristic energy of 300 J. The excitation pulse

  8. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

    SciTech Connect (OSTI)

    Esposto, Michele; Krishnamoorthy, Sriram; Nath, Digbijoy N.; Bajaj, Sanyam; Hung, Ting-Hsiang; Rajan, Siddharth

    2011-09-26

    We report on our investigation of the electrical properties of metal/Al{sub 2}O{sub 3}/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al{sub 2}O{sub 3} films on GaN substrates. The conduction band offset at the Al{sub 2}O{sub 3}/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 x 10{sup 12 }cm{sup -2} at the Al{sub 2}O{sub 3}/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

  9. Gallium arsenide and multibandgap solar cell research: Final subcontract report, April 1984-April 1986

    SciTech Connect (OSTI)

    Vernon, S.M.; Tobin, S.P.; Wolfson, R.G.

    1987-07-01

    This report presents results of research in high-efficiency, low-cost solar cells, emphasizing heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The report describes the start-up and characterization of a new metal-organic vapor deposition (MOCVD) reactor for the growth of GaAs, GaAlAs, and GaAsP on 2-in.-diameter substrates with excellent uniformity; optimization of the growth of Ge films on Si by a simple CVD technique; and production of a 9% efficient GaAs-on-Ge-on-Si solar cell. The advancements in the understanding of the GaAs-on-Si growth process and in the quality of the films are described. The work also included production of a 7% efficient GaAs-on-Si cell; development of a GaAsP-on-GaAs growth technology; production of a 16.5% efficient GaAsP cell and a 17.7% efficient GaAlAs cell on GaAs; and production of a 20.8% efficient GaAs-on-GaAs cell. Also described are improvements in cell processing technologies, including the use of a double-layer antireflection coating.

  10. May 20, 2010 Growing gallium arsenide in thick multilayer stacks could make a big

    E-Print Network [OSTI]

    Rogers, John A.

    of substrates, including glass and plastic. In photovoltaics, we expect the cost reductions to be significant, and that the ability to put cells on thin sheets of flexible plastic will increase the mechanical robustness://images.iop.org/objects/opo/news/16/5/11/gaas2.jpg) This strategy does not consume the wafer, which can be reused for many rounds

  11. Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays

    SciTech Connect (OSTI)

    Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

    2002-01-30

    High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

  12. Synthesis and optical properties of CsC1-doped gallium-sodium-sulfide glasses

    SciTech Connect (OSTI)

    Hehlen, Markus P [Los Alamos National Laboratory; Bennett, Bryan L [Los Alamos National Laboratory; Williams, Darrick J [Los Alamos National Laboratory; Muenchausen, Ross E [Los Alamos National Laboratory; Castro, Alonso [Los Alamos National Laboratory; Tornga, Stephanie C [Los Alamos National Laboratory

    2009-01-01

    Ga{sub 2}S{sub 3}-Na{sub 2}S (GNS) glasses doped with CsCl were synthesized in open crucibles under inert atmosphere. The evaporative loss of CsCl during glass melting was measured by energy dispersive X-ray spectroscopy and corrected for by biasing the CsCl concentration in the mixture of starting materials to obtain glasses with accurately controlled stoichiometry. Glass transition temperatures, refractive index dispersions, and band edge energies were measured for four GNS:CsCl glasses, and the respective values were found to significantly improve over earlier studies that did not mitigate CsCl evaporative losses. The refractive index dispersion measurements indicate that the Cs{sup +} and Cl{sup -} radii are 16% larger in GNS:CsCl glass than in bulk crystalline CsCl. The band edge energy increases from 2.97 eV in GNS glass to 3.32 eV in GNS glass doped with 20 mol% CsCl as a result of introducing Cl{sup -} ions having a large optical electronegativity. The large bandgap of 3.32 eV and the low (450 cm{sup -1}) phonon energy make GNS:20%CsCl an attractive host material for rare-earth ions with radiative transitions in the near ultra-violet, visible, and near-infrared spectral regions.

  13. FORMATION OF MESOPOROUS GALLIUM ARSENIDE FOR LIFT-OFF PROCESSES BY ELECTROCHEMICAL ETCHING

    E-Print Network [OSTI]

    of weight of multi-junction III-V semiconductor solar cells is an important issue for space applications to the industrial production of space solar cells. INTRODUCTION Space missions need a lightweight and reliable power source during their working life. The Vanguard-1 was the first satellite in 1958 to use Si solar cells

  14. Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator

    E-Print Network [OSTI]

    Vuckovic, Jelena

    -induced change in refractive index of InP, GaAs, and InGaAsP," IEEE J. Quantum Electron. 26(1), 113­122 (1990). 7, "Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser," to be published

  15. Gallium phosphide photonic crystal nanocavities in the visible Kelley Rivoire,a

    E-Print Network [OSTI]

    Vuckovic, Jelena

    for devices requiring very high brightness because of its in- direct band gap, incorporating InP quantum dots,7 fluorescent molecules,8 and visible colloidal quantum dots.9 To date, most photonic crystal devices operating or quantum wells,18 or colloidal quantum dots should greatly increase the quantum efficiency. Additionally

  16. Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate 

    E-Print Network [OSTI]

    Yeh, Chun-Liang

    1993-01-01

    the frequency ~, = urn' +amoco) have been observed. In the third part of the optical tests, the degenerate parametric amplification of an optical signal RF modulated at the first mode of the resonator with a microwave pumping LO at second mode... for the ring resonator. 77 46 Mixing Test Setup. 79 47 The sum signal IF, for the linear resonator with 10 prn coupling gap. The RF signal is at 4. 875 GHz and the I, O signal is at 4. 750 GHz, where the IF, signal (users = ans + uiqo) is detected at 9. 624...

  17. SAGE: Solar Neutrino Data from SAGE, the Russian-American Gallium Solar Neutrino Experiment

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    SAGE Collaboration

    SAGE is a solar neutrino experiment based on the reaction 71Ga + n goes to 71Ge + e-. The 71Ge atoms are chemically extracted from a 50-metric ton target of Ga metal and concentrated in a sample of germane gas mixed with xenon. The atoms are then individually counted by observing their decay back to 71Ga in a small proportional counter. The distinguishing feature of the experiment is its ability to detect the low-energy neutrinos from proton-proton fusion. These neutrinos, which are made in the primary reaction that provides the Sun's energy, are the major component of the solar neutrino flux and have not been observed in any other way. To shield the experiment from cosmic rays, it is located deep underground in a specially built facility at the Baksan Neutrino Observatory in the northern Caucasus mountains of Russia. Nearly 100 measurements of the solar neutrino flux have been made during 1990-2000, and their combined result is a neutrino capture rate that is well below the prediction of the Standard Solar Model. The significant suppression of the solar neutrino flux that SAGE and other solar neutrino experiments have observed gives a strong indication for the existence of neutrino oscillations. [copied from the SAGE homepage at http://ewi.npl.washington.edu/SAGE/SAGE.html

  18. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  19. Outphasing Control of Gallium Nitride based Very High Frequency Resonant Converters

    E-Print Network [OSTI]

    Madsen, Mickey P.

    In this paper an outphasing modulation control method suitable for line regulation of very high frequency resonant converters is described.

  20. Gallium arsenide digital integrated circuits for controlling SLAC CW-RF systems

    SciTech Connect (OSTI)

    Ronan, M.T.; Lee, K.L.; Corredoura, P.; Judkins, J.G.

    1988-10-01

    In order to fill the PEP and SPEAR storage rings with beams from the SLC linac and damping rings, precise control of the linac subharmonic buncher and the damping ring RF is required. Recently several companies have developed resettable GaAs master/slave D-type flip-flops which are capable of operating at frequencies of 3 GHz and higher. Using these digital devices as frequency dividers, one can phase shift the SLAC CW-RF systems to optimize the timing for filling the storage rings. We have evaluated the performance of integrated circuits from two vendors for our particular application. Using microstrip circuit techniques, we have built and operated in the accelerator several chassis to synchronize a reset signal from the storage rings to the SLAC 2.856 GHz RF and to phase shift divide-by-four and divide-by-sixteen frequency dividers to the nearest 350 psec bucket required for filling. 4 refs., 4 figs., 2 tabs.

  1. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    S. Zhang, Silicides, Handbook of semiconductor manufacturingchapter 10, Handbook of Semiconductor Manufacturing

  2. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    F. Schaffler, Properties of Advanced Semiconductor Materials1989). Properties of Advanced Semiconductor Materials: GaN,semiconductor devices worsen. In-depth explanations of how material properties

  3. Surface Preparation of Gallium Nitride for Atomic Layer Deposition of Aluminum Oxide /

    E-Print Network [OSTI]

    Kerr, Amanda J.

    2014-01-01

    Nitride for Atomic Layer Deposition of Aluminum Oxide AForce Microscopy Atomic Layer Deposition Capacitance-VoltageSurfaces for Atomic Layer Deposition of Aluminum Oxide” x

  4. Structural, electronic, and dynamical properties of amorphous gallium arsenide: a comparison between two topological models

    E-Print Network [OSTI]

    Lewis, Laurent J.

    corresponds to the traditional, amorphous, Polk­type, network, randomly decorated with Ga and As atoms­ work is energetically favored over Polk, but that most properties are little affected their vertices. Based on these ideas, the mechanical CRN constructed by Polk was found to provide a very

  5. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Universitŕ di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm˛ s?ą that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  6. Efficiency Optimization for a Power Factor Correction (PFC) Rectifier with Gallium Nitride

    E-Print Network [OSTI]

    Paderborn, Universität

    and utilized to identify the best design by numeric optimization of switching frequency, number of turns) and to increase the power density. Despite of the comparable low switching losses of GaN transistors circuit that achieves negative voltage at switch-off with a unipolar power supply is described in Section

  7. Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy and XPS

    SciTech Connect (OSTI)

    Windisch, Charles F.; Henager, Charles H.; Engelhard, Mark H.; Bennett, Wendy D.

    2009-12-01

    Laser Raman spectroscopy and x-ray photoelectron spectroscopy were used to study the evolution of composition of oxide films in the presence of zirconia coatings on miniature HT-9 alloy specimens subjected to elevated temperature in air. The experiments expanded on previous efforts to develop a quick-screening technique for candidate alloys for cladding materials (HT-9) and actinide-based mixed oxide fuel mixtures (represented by the zirconia coating) by investigating the effect of both coating composition and alloy pretreatment conditions on the high temperature reactions. In particular, the presence of the element Ga (a potential impurity in mixed oxide fuel) in the initial zirconia coating was found to accelerate the rate of oxide growth relative to that of yttria-stabilized zirconia studied previously. In addition, HT-9 samples that were subjected to different thermal pretreatments gave different results. The results suggest that the presence of Ga in a mixed oxide fuel will enhance the corrosion of HT-9 cladding under the conditions of this study, although the extent of enhancement is influenced by thermal pretreatment of the cladding material. The results also demonstrate the need to combine Raman spectroscopy with other techniques, particularly photoelectron spectroscopy, for optimizing composition and/or fabrication conditions of both cladding and oxide fuels for advanced nuclear reactors.

  8. Triple?crystal x?ray diffraction analysis of reactive ion etched gallium arsenide

    E-Print Network [OSTI]

    Wang, V. S.; Matyi, R. J.; Nordheden, Karen J.

    1994-01-01

    improvement was observed. Furthermore, we have shown that this reduction in process?induced surfacestructural damage is not due merely to the removal of residual chemical?mechanical polishing damage....

  9. Process development for the fabrication of monolithic optoelectronic resonators on gallium arsenide substrates 

    E-Print Network [OSTI]

    Fairchild, Brock Wilson

    1990-01-01

    performance. The resonating structures were constructed on semi-insulating GaAs, doped GaAs, epitaxially-grown doped GaAs on GaAs and heterostructure Al- GaAs/GaAs/AlGaAs/GaAs substrates. A thin layer of Au-Ge and Ni was deposited on the substrates as a... loss microwave structure, were electroplated on the uncovered regions of the Au-Ge and Ni. After photoresist removal, the Au-Ge and Ni layers were removed from the unwanted regions. A backside metal was deposited and the sample was annealed. The four...

  10. Fabrication of an optically driven 10 GHz ring resonator on a gallium arsenide substrate 

    E-Print Network [OSTI]

    McGregor, Douglas Scott

    1989-01-01

    of the optically excited output power from ring 3 at the first three harmonics revealed microwave power levels of -43 dBm, -52 dBm, and -65 dBm with loaded Q values ol' 53. 5, 75. 43, and 103. 0, respectively. ACKNOWLEDGMENTS I would like to acknowledge.... Preliminary Plating Experiments D. Ring Resonator Fabrication Process . E. Ohmic Contact Fabrication and Analysis F. Design and Analysis of the Substrate Holder G. Testing Apparatus and Procedure for the Microwave Characteristics of the Ring Resonators H...

  11. The Hall mobility measurement of Liquid Phase Epitaxy grown aluminum gallium arsenide 

    E-Print Network [OSTI]

    Choi, Young-Shig

    1986-01-01

    ' Committee) 8~zP~ Donald L. Parker (Member) . / ! "Yp Thomas W. Adair 111 (Member) Ran al L. Geif;er ( i vl e &n h p. I' ) . ). W. Howze (II& ad of' D& partrnenf. ) D&'c&" rnb& r f!)f&(i ABSTRACT The Hall Mobility Measurement ol' Liquid Phase... keep unwanted irnpurit, ies in solut. ion. They & a. n also be made very thin, i. e. . a, few microns. 'I'hese factors make LPE important &o the bet&&rostructur& devi& e for the growth ol' non-silicon based materials, which ar& used to fabricat& a...

  12. Sandia Energy - BES Web Highlight: Single-mode gallium nitride nanowire

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust, High-Throughput Analysis ofSample SULI ProgramPhysical Societylasers BES Web

  13. Gallium Safety in the Laboratory INEEL/CON-03-00078

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding accessby aLED Street LightingFrom the Building to PROGWM REVIEWThis

  14. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i nA Guide to TappingWORK BREAKDOWNEnergy howBuilding America TopofSeacrist,

  15. High-Quality, Low-Cost Bulk Gallium Nitride Substrates | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing

  16. I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

    DOE Patents [OSTI]

    Chen, Wen S. (Seattle, WA); Stewart, John M. (Seattle, WA)

    1992-01-07

    A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

  17. Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

    SciTech Connect (OSTI)

    Jo, Jeong-Wan; Park, Sung Kyu E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon E-mail: skpark@cau.ac.kr

    2014-07-28

    In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

  18. Demonstration of a novel dispersive spectral splitting optical element for cost- effective photovoltaic conversion

    E-Print Network [OSTI]

    Maragliano, Carlo; Bronzoni, Matteo; Rampino, Stefano; Fitzgerald, Eugene A; Chiesa, Matteo; Stefancich, Marco

    2015-01-01

    In this letter we report the preliminary validation of a low-cost paradigm for photovoltaic power generation that utilizes a prismatic Fresnel-like lens to simultaneously concentrate and separate sunlight into continuous laterally spaced spectral bands, which are then fed into spectrally matched single-junction photovoltaic cells. A prismatic lens was designed using geometric optics and the dispersive properties of the employed material, and its performance was simulated with a ray- tracing software. After device optimization, it was fabricated by injection molding, suitable for large-scale mass production. We report an average optical transmittance of ~ 90% over the VNIR range with spectral separation in excellent agreement with our simulations. Finally, two prototype systems were tested: one with GaAsP and c-Si photovoltaic devices and one with a pair of copper indium gallium selenide based solar cells. The systems demonstrated an increase in peak electrical power output of 51% and 64% respectively under wh...

  19. Materials with low DC magnetic susceptibility for sensitive magnetic measurements

    E-Print Network [OSTI]

    Khatiwada, Rakshya; Kendrick, Rachel; Khosravi, Marjan; Peters, Michael; Smith, Erick; Snow, Mike

    2015-01-01

    Materials with very low DC magnetic susceptibility have many scientific applications. To our knowledge however, relatively little research has been conducted with the goal to produce a totally nonmagnetic material. This phrase in our case means after spatially averaging over macroscopic volumes, it possesses an average zero DC magnetic susceptibility. We report measurements of the DC magnetic susceptibility of three different types of nonmagnetic materials at room temperature: (I) solutions of paramagnetic salts and diamagnetic liquids, (II) liquid gallium-indium alloys and (III) pressed powder mixtures of tungsten and bismuth. The lowest measured magnetic susceptibility among these candidate materials is in the order of 10^-9 cgs volume susceptibility units, about two orders of magnitude smaller than distilled water. In all cases, the measured concentration dependence of the magnetic susceptibility is consistent with that expected for the weighted sum of the susceptibilities of the separate components within...

  20. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

    SciTech Connect (OSTI)

    Liu, Kuan-Hsien; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)

    2014-03-31

    This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

  1. PROJECT PROFILE: From Modules to Atoms: Increasing Reliability/Stability of Commercially Relevant Photovoltaic Technologies

    Broader source: Energy.gov [DOE]

    While there are statistical studies and macroscopic descriptions of module-level degradation, there is a lack of understanding of the structural, chemical, and electrical properties at the microscopic scale of how these processes occur and how to reduce or eliminate them. The project will study reliability-related defects in major photovoltaic (PV) technologies that include silicon (Si), cadmium telluride (CdTe), and copper indium gallium selenide (CIGS). Researchers will use imaging and microscopy characterization tools along with multi-physics modeling to derive the causes of power-limiting defects that are responsible for potential-induced degradation in Si, metastability and transient degradations in CdTe, and increased degradation due to reverse-bias breakdown in CIGS.

  2. NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1991--31 July 1992

    SciTech Connect (OSTI)

    Not Available

    1992-08-01

    This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help people keep abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous silicon research; polycrystalline thin films (including copper indium diselenide, cadmium telluride, and thin-film silicon); crystalline materials and advanced concepts (including silicon, gallium arsenide, and other group III-V materials); and PV manufacturing technology development (which may include manufacturing information for various types of PV materials).

  3. Exchanging Ohmic Losses in Metamaterial Absorbers with Useful Optical Absorption for Photovoltaics

    E-Print Network [OSTI]

    Vora, Ankit; Pala, Nezih; Kulkarni, Anand; Pearce, Joshua M; Güney, Durdu Ö

    2014-01-01

    Using metamaterial absorbers, we have shown that metallic layers in the absorbers do not necessarily constitute undesired resistive heating problem for photovoltaics. Tailoring the geometric skin depth of metals and employing the natural bulk absorbance characteristics of the semiconductors in those absorbers can enable the exchange of undesired resistive losses with the useful optical absorbance in the active semiconductors. Thus, Ohmic loss dominated metamaterial absorbers can be converted into photovoltaic near-perfect absorbers with the advantage of harvesting the full potential of light management offered by the metamaterial absorbers. Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%-95% absorbance can be achieved in the semiconductor layers of the converted metamaterial absorbers. Besides other metamaterial and plasmonic devices, our results may also apply to photodectors and other metal or semiconductor based optical devices where resistive losses and p...

  4. The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system

    E-Print Network [OSTI]

    Bjřrk, R

    2015-01-01

    The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system is examined using an analytical model for four different types of commercial PVs and a commercial bismuth telluride TEG. The TEG is applied directly on the back of the PV, so that the two devices have the same temperature. The PVs considered are crystalline Si (c-Si), amorphous Si (a-Si), copper indium gallium (di)selenide (CIGS) and cadmium telluride (CdTe) cells. The degradation of PV performance with temperature is shown to dominate the increase in power produced by the TEG, due to the low efficiency of the TEG. For c-Si, CIGS and CdTe PV cells the combined system produces a lower power and has a lower efficiency than the PV alone, whereas for an a-Si cell the total system performance may be slightly increased by the TEG.

  5. Observed damage during Argon gas cluster depth profiles of compound semiconductors

    SciTech Connect (OSTI)

    Barlow, Anders J. Portoles, Jose F.; Cumpson, Peter J.

    2014-08-07

    Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-? dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025?nm/min (3.95?×?10{sup ?2}?amu/atom in ion) for 6?keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

  6. Materials with low DC magnetic susceptibility for sensitive magnetic measurements

    E-Print Network [OSTI]

    Rakshya Khatiwada; Lawrence Dennis; Rachel Kendrick; Marjan Khosravi; Michael Peters; Erick Smith; Mike Snow

    2015-06-30

    Materials with very low DC magnetic susceptibility have many scientific applications. To our knowledge however, relatively little research has been conducted with the goal to produce a totally nonmagnetic material. This phrase in our case means after spatially averaging over macroscopic volumes, it possesses an average zero DC magnetic susceptibility. We report measurements of the DC magnetic susceptibility of three different types of nonmagnetic materials at room temperature: (I) solutions of paramagnetic salts and diamagnetic liquids, (II) liquid gallium-indium alloys and (III) pressed powder mixtures of tungsten and bismuth. The lowest measured magnetic susceptibility among these candidate materials is in the order of 10^-9 cgs volume susceptibility units, about two orders of magnitude smaller than distilled water. In all cases, the measured concentration dependence of the magnetic susceptibility is consistent with that expected for the weighted sum of the susceptibilities of the separate components within experimental error. These results verify the Wiedemann additivity law and thereby realize the ability to produce materials with small but tunable magnetic susceptibility. For our particular scientific application, we are also looking for materials with the largest possible number of neutrons and protons per unit volume. The gallium-indium alloys fabricated and measured in this work possess to our knowledge the smallest ratio of volume magnetic susceptibility to nucleon number density per unit volume for a room temperature liquid, and the tungsten-bismuth pressed powder mixtures possess to our knowledge the smallest ratio of volume magnetic susceptibility to nucleon number density per unit volume for a room temperature solid. This ratio is a figure of merit for a certain class of precision experiments that search for possible exotic spin-dependent forces of Nature.

  7. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

  8. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    E-Print Network [OSTI]

    Zhu, Yuankun

    2014-01-01

    7. Optical bandgap of the doped CdO thin films as a functionelectrical properties of In-doped CdO thin films fabricatedand transparent Ti-doped CdO films by pulsed laser

  9. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    A low-cost, high-efficiency solar cell based on dye-F. Dimroth, “High-efficiency solar cells from III-V compoundpower conversion efficiency of solar cells, quantification

  10. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    printing,” Solar Energy Materials and Solar Cells, vol. 93,cells,” Solar Energy Materials and Solar Cells, vol. 95, no.CdTe Solar Cells,” in Solar Energy, no. February, R. D.

  11. Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

    E-Print Network [OSTI]

    Xiulai Xu; Andrew C. Irvine; Yang Yang; Xitian Zhang; David A. Williams

    2010-11-05

    We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots.

  12. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    for efficient solar energy conversion,” Journal of MaterialsSolar energy can help reduce GHG emission by providing clean energy conversions

  13. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    E-Print Network [OSTI]

    Zheng, Maxwell S

    2015-01-01

    1 I NTRODUCTION Solar energy and photovoltaics The case forFOR III-V PHOTOVOLTAICS III-V semiconductor solar cells havesolar cell structure for large- scale photovoltaics. InP is

  14. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    for efficient photovoltaic cells. ,” Nature Nanotechnology,Part II – Photovoltaic Cell I-V Characterization Theory andof the photovoltaic effect in the 19 th century, solar cells

  15. High activity of an indium alkoxide complex toward ring opening polymerization of cyclic esters

    E-Print Network [OSTI]

    Quan, SM; Diaconescu, PL

    2015-01-01

    and carbonate monomers 23 make their polymerization a promising area toward finding new biodegradable polymers.

  16. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    energy sources, solar energy is one of the most abundant andV characteristics of one of the solar cell devices. From thedata plots from one of the nanopillar solar cell devices. (

  17. The Structure and Properties of Amorphous Indium Oxide D. Bruce Buchholz,

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    , for optimized materials.15 The electrical and optical properties of crystalline TCOs and TOSs (c-TCOs and c-TOSs would afford the same opportunity for materials optimization. There is, however, a much smaller*, Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United

  18. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    NanoSystems Institute (CNSI) cleanroom facility. She alsofriends, everyone in the lab and cleanroom buddies. Withmy long hours in the cleanroom were well worth it! v Chapter

  19. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

    DOE Patents [OSTI]

    Ciszek, T.F.

    1984-11-29

    A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  20. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    semiconductor nanowire solar cells by selective-area metal-and Y. Yang, “A polymer tandem solar cell with 10.6% powerbulk heterojunction plastic solar cells by screen printing,”

  1. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    printing,” Solar Energy Materials and Solar Cells, vol. 93,cells,” Solar Energy Materials and Solar Cells, vol. 95, no.55] B. McConnell, “Solar Energy: This Is What a Disruptive

  2. Reducing the In2O3(111) Surface Results in Ordered Indium Adatoms

    SciTech Connect (OSTI)

    Wagner, Margareta; Seiler, Steffen; Meyer, Bernd; Boatner, Lynn A; Schmid, M.; Diebold, U.

    2014-01-01

    The In2O3(111) surface can be transformed from an oxidized bulk termination to one that is covered by single In adatoms. As each adatom sits at one specific site within the surface unit cell they form a well-ordered (1 1) superstructure. Annealing at 500 C in O2 or in ultrahigh vacuum results in a fully reversible conversion between these two surface terminations; this transformation and intermediate stages were followed with Scanning Tunneling Microscopy (STM). Formation of this novel surface structure under reducing conditions is corroborated by Density Functional Theory (DFT). The reduced adatom-covered and the oxidized In2O3(111) surfaces are expected to exhibit different chemical and electronic properties, which can easily be exploited by the facile and reversible switching between the two terminations.

  3. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    E-Print Network [OSTI]

    Zheng, Maxwell S

    2015-01-01

    for high-efficiency, low-cost solar cells. R EFERENCES K.J.for high-efficiency and low-cost solar cells. R EFERENCES H.has_first_solar_retaken_the_lowest_cost_pv_manufacturer_

  4. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    E-Print Network [OSTI]

    Zheng, Maxwell S

    2015-01-01

    solar_retaken_the_lowest_cost_pv_manufacturer_ mantle 10. M.the Context of PV Manufacturing Costs. IEEE Journal ofsilicon. Figure 3. Total PV system costs over time showing

  5. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    E-Print Network [OSTI]

    Zheng, Maxwell S

    2015-01-01

    Bosi and C. Pelosi, Progress in Photovoltaics: Research and1.1 S OLAR ENERGY AND PHOTOVOLTAICS Compared to all otherwiki/Growth_of_photovoltaics 7. http://www.solarnews.es/

  6. Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

    SciTech Connect (OSTI)

    Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

    2011-04-15

    In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

  7. Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

    E-Print Network [OSTI]

    Zheng, Maxwell S

    2015-01-01

    Technol. 12, 178 (1996). First Solar, July 26, 2011 (http://Osterwald and K. A. Emery, Solar Cells, 1983, 10, 1–5. 37.D. J. Dunlavy and T. Hanak, Solar Cells, 1988, 24, 339–352.

  8. Highly Scalable, Uniform, and Sensitive Biosensors Based on Top-Down Indium Oxide Nanoribbons

    E-Print Network [OSTI]

    Zhou, Chongwu

    . Streptavidin conjugated Alexar Fluor 568 was purchased from Life Technologies. Amine-PEG3- Biotin was purchased from Thermo Scientific. Amine PEG was purchased from Nanonocs. Streptavidin conjugated with 20 nm Au acetone and isopropyl alcohol for 5 minutes before dried in N2 stream. To generate hydroxyl groups

  9. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    E-Print Network [OSTI]

    Zhu, Yuankun

    2014-01-01

    high efficiency multi-junction solar cells that harvest aeffective for multi-junction solar cells which consist ofhigh performance multi-junction solar cells. Cadmium oxide (

  10. Lifetime of PWR silver-indium-cadmium control rods. Final report

    SciTech Connect (OSTI)

    Sipush, P.J.; Woodcock, J.; Chickering, R.W.

    1986-03-01

    A hot cell examination was performed on selected rodlets of a lead rod cluster control assembly (RCCA) which had experienced eleven cycles of operation in Point Beach Unit 1. The principal purpose of the program was to evaluate the performance of RCCAs. The hot cell examination of the rodlets involved detailed visual inspections, profilometry, metallography, cladding chemistry, dosimetry, scanning electron microscopy, corrosion tests, microhardness tests, absorber density measurements, and cladding tensile tests. Wear scars and a hairline crack in the cladding were evaluated. The results of the examinations and analysis of WEPCO site photographs led to an estimate of the service life for RCCAs which are used in Westinghouse 14 x 14 fuel assemblies. Also, wear scar widths were correlated with wear scar depths. The correlation may be used to estimate wear scar depths based on site photographs of wear scars for 14 x 14 RCCAs. The results of the program may be used as guidelines for RCCAs for 15 x 15 and 17 x 17 Westinghouse fuel designs. 10 refs., 89 figs., 26 tabs.

  11. Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced and heterostructures--which can be accomplished by low- pressure metalorganic chemical vapor deposition MOCVD --the- rium vapor pressure of nitrogen during growth. This requires different approaches in growing structures

  12. Electrodeposition of Indium Antimonide Nanowires in Porous Anodic Alumina Asaduzzaman Mohammad1

    E-Print Network [OSTI]

    Chen, Yong P.

    uses a reverse anodization technique to penetrate the hemispherical pore bottom barrier oxide layer to break through the pore bottom barrier oxide layer including chemical or plasma etching processes [5, 9

  13. Indium phosphide based integrated photonic devices for telecommunications and sensing applications

    E-Print Network [OSTI]

    Shih, Ta-Ming, Ph. D. Massachusetts Institute of Technology

    2012-01-01

    Photonics is an exciting area of study that is situated at the cross-section of physics, material science, and electrical engineering. The integration of photonic devices serves to reduce the size, weight, power consumption, ...

  14. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    printing,” Solar Energy Materials and Solar Cells, vol. 93,cells,” Solar Energy Materials and Solar Cells, vol. 95, no.for efficient solar energy conversion,” Journal of Materials

  15. High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition

    E-Print Network [OSTI]

    Javey, Ali

    transfer techniques have been explored in the past, where thin epitax- ial films of GaAs and InP and GaAs have the most ideal band gaps and highest the- oretical efficiencies for single-junction cells April 2012; accepted 21 May 2012; published online 25 June 2012) III­V semiconductor solar cells have

  16. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    for the improvement of CdTe solar cells,” Solar Energyimprovement over the past few years. 1.3 Nanotechnology and Solar Cells

  17. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1997-01-01

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  18. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1996-01-01

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  19. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1996-12-03

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  20. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1997-03-04

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  1. Advanced materials for solid oxide fuel cells: Hafnium-Praseodymium-Indium Oxide System

    SciTech Connect (OSTI)

    Bates, J.L.; Griffin, C.W.; Weber, W.J.

    1988-06-01

    The HfO/sub 2/-PrO/sub 1.83/-In/sub 2/O/sub 3/ system has been studied at the Pacific Northwest Laboratory to develop alternative, highly electrically conducting oxides as electrode and interconnection materials for solid oxide fuel cells. A coprecipitation process was developed for synthesizing single-phase, mixed oxide powders necessary to fabricate powders and dense oxides. A ternary phase diagram was developed, and the phases and structures were related to electrical transport properties. Two new phases, an orthorhombic PrInO/sub 3/ and a rhombohedral Hf/sub 2/In/sub 2/O/sub 7/ phase, were identified. The highest electronic conductivity is related to the presence of a bcc, In/sub 2/O/sub 3/ solid solution (ss) containing HfO/sub 2/ and PrO/sub 1.83/. Compositions containing more than 35 mol % of the In/sub 2/O/sub 3/ ss have electrical conductivities greater than 10/sup /minus/1/ (ohm-cm)/sup /minus/1/, and the two or three phase structures that contain this phase appear to exhibit mixed electronic-ionic conduction. The high electrical conductivities and structures similar to the Y/sub 2/O/sub 3/-stabilized ZrO/sub 2/(HfO/sub 2/) electrolyte give these oxides potential for use as cathodes in solid oxide fuel cells. 21 refs.

  2. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    SciTech Connect (OSTI)

    Siwak, N. P. [Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, Maryland 20742 (United States); Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States); Fan, X. Z.; Ghodssi, R. [Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, Maryland 20742 (United States); Kanakaraju, S.; Richardson, C. J. K. [Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States)

    2014-10-06

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  3. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement 

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16

    of several methods for carbon nanotube film fabrication: (a) vacuum filtration, (b) air-spraying, (c) transfer printing, and (d) rod coating (reproduced from [91], [92], [37], and [42], respectively). .................................... 16 2.8 (a...) Graphene oxide structure. (b) Deposition of graphene oxide sheet by dip coating and an SEM image of deposited graphene oxide pieces (reproduced from [172]). (c) Photo reduction lithography approach for fabrication of patterns on (PDDA/Graphene Oxide...

  4. High thermoelectric performance by resonant dopant indium in nanostructured SnTe

    E-Print Network [OSTI]

    Liao, Bolin

    From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this ...

  5. The role of correlation entropy in nuclear fusion in liquid lithium, indium and mercury

    E-Print Network [OSTI]

    M. Coraddu; M. Lissia; P. Quarati; A. M. Scarfone

    2015-01-19

    Nuclear fusion cross-sections considerably higher than corresponding theoretical predictions are observed in low-energy experiments with metal matrix targets and accelerated deuteron beams. The cross-section increment is significantly higher for liquid than for solid targets. We propose that the same two-body correlation entropy used in evaluating the metal melting entropy explains the large liquid-solid difference of the effective screening potential that parameterizes the cross-section increment. This approach is applied to the specific case of the $^6$Li(d,$\\alpha$)$^4$He reaction, whose measured screening potential liquid-solid difference is $(235 \\pm 63)$ eV. Cross sections in the two metals with the highest two-body correlation entropy (In and Hg) have not yet been measured: increments of the cross sections in liquid relative to the ones in solid metals are estimated with the same procedure.

  6. Lithium inclusion in indium metal-organic frameworks showing increased surface area and hydrogen adsorption

    SciTech Connect (OSTI)

    Bosch, Mathieu; Zhang, Muwei; Feng, Dawei; Yuan, Shuai; Wang, Xuan [Department of Chemistry, Texas A and M University, College Station, Texas 77842 (United States); Chen, Ying-Pin [Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77842 (United States); Zhou, Hong-Cai, E-mail: zhou@mail.chem.tamu.edu [Department of Chemistry, Texas A and M University, College Station, Texas 77842 (United States); Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77842 (United States)

    2014-12-01

    Investigation of counterion exchange in two anionic In-Metal-Organic Frameworks (In-MOFs) showed that partial replacement of disordered ammonium cations was achieved through the pre-synthetic addition of LiOH to the reaction mixture. This resulted in a surface area increase of over 1600% in (Li [In(1,3 ? BDC){sub 2}]){sub n} and enhancement of the H{sub 2} uptake of approximately 275% at 80?000 Pa at 77 K. This method resulted in frameworks with permanent lithium content after repeated solvent exchange as confirmed by inductively coupled plasma mass spectrometry. Lithium counterion replacement appears to increase porosity after activation through replacement of bulkier, softer counterions and demonstrates tuning of pore size and properties in MOFs.

  7. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01

    and screen printing,” Solar Energy Materials and SolarCdTe Solar Cells,” in Solar Energy, no. February, R. D.of CdTe solar cells,” Solar Energy Materials and Solar

  8. The role of correlation entropy in nuclear fusion in liquid lithium, indium and mercury

    E-Print Network [OSTI]

    Coraddu, M; Quarati, P; Scarfone, A M

    2015-01-01

    Nuclear fusion cross-sections considerably higher than corresponding theoretical predictions are observed in low-energy experiments with metal matrix targets and accelerated deuteron beams. The cross-section increment is significantly higher for liquid than for solid targets. We propose that the same two-body correlation entropy used in evaluating the metal melting entropy explains the large liquid-solid difference of the effective screening potential that parameterizes the cross-section increment. This approach is applied to the specific case of the $^6$Li(d,$\\alpha$)$^4$He reaction, whose measured screening potential liquid-solid difference is $(235 \\pm 63)$ eV. Cross sections in the two metals with the highest two-body correlation entropy (In and Hg) have not yet been measured: increments of the cross sections in liquid relative to the ones in solid metals are estimated with the same procedure.

  9. Sensors and Actuators B 118 (2006) 135141 Low temperature indium oxide gas sensors

    E-Print Network [OSTI]

    2006-01-01

    Available online 30 May 2006 Abstract InOx thin films were grown by dc magnetron sputtering. Structural size variation that determines the sensitivity of InOx films against ozone. © 2006 Elsevier B.V. All rights reserved. Keywords: Metal oxide thin films; InOx; Gas sensors; Ozone 1. Introduction The interest

  10. Molecular Mechanisms of Selenium Tolerance and Hyperaccumulation in Stanleya pinnata1[W][OA

    E-Print Network [OSTI]

    Technology, Fresno, California 93740 (J.L.F.); Biology Department (J.L.F., C.F.Q., J.J.C., D.V.H., E.A.H.P.-S.) and Department of Horticulture and Landscape Architecture (C.S.), Colorado State University, Fort Collins, chlorosis and necrosis, impaired photosynthesis, and high levels of reactive oxygen species. Levels

  11. Selenium Partitioning and Food-Chain Transfer at the Salton Sea

    E-Print Network [OSTI]

    Tobin, Jennifer Marie

    2011-01-01

    drains and the Whitewater, Alamo, and New Rivers to supplyponds supplied by a mix of Alamo River and Sea water. Pond 1water and 21.4 mg/kg dw using Alamo River water, and Se

  12. NEW DETECTIONS OF ARSENIC, SELENIUM, AND OTHER HEAVY ELEMENTS IN TWO METAL-POOR STARS

    E-Print Network [OSTI]

    Roederer, Ian U.

    We use the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope to obtain new high-quality spectra covering the 1900 ?? ? 2360 Ĺ wavelength range for two metal-poor stars, HD 108317 and HD 128279. We ...

  13. Selenium Partitioning and Food-Chain Transfer at the Salton Sea

    E-Print Network [OSTI]

    Tobin, Jennifer Marie

    2011-01-01

    Conservation Habitat (SCH) ponds at the south end of the Seaselenium (Se) in the SCH ponds to levels potentially toxicpotential Se risk in SCH ponds, this study employed a novel

  14. Distribution coefficient values describing iodine, neptunium, selenium, technetium, and uranium sorption to Hanford sediments. Supplement 1

    SciTech Connect (OSTI)

    Kaplan, D.I.; Seme, R.J.

    1995-03-01

    Burial of vitrified low-level waste (LLW) in the vadose zone of the Hanford Site is being considered as a long-term disposal option. Regulations dealing with LLW disposal require that performance assessment (PA) analyses be conducted. Preliminary modeling efforts for the Hanford Site LLW PA were conducted to evaluate the potential health risk of a number of radionuclides, including Ac, Am, C, Ce, Cm, Co, Cs, Eu, 1, Nb, Ni, Np, Pa, Pb, Pu, Ra, Ru, Se, Sn, Sr, Tc, Th, U, and Zr (Piepho et al. 1994). The radionuclides, {sup 129}I, {sup 237}Np, {sup 79}Se, {sup 99}Tc, and {sup 234,235,238}U, were identified as posing the greatest potential health hazard. It was also determined that the outcome of these simulations were very sensitive to the parameter describing the extent to which radionuclides sorbed to the subsurface matrix, described as a distribution coefficient (K{sub d}). The distribution coefficient is a ratio of the radionuclide concentration associated with the solid phase to that in the liquid phase. The literature-derived K{sub d} values used in these simulations were conservative, i.e., lowest values within the range of reasonable values used to provide an estimate of the maximum health threat. Thus, these preliminary modeling results reflect a conservative estimate rather than a best estimate of what is likely to occur. The potential problem with providing only a conservative estimate is that it may mislead us into directing resources to resolve nonexisting problems.

  15. The oxidative addition of simple selenium molecules to an unsaturated iridium (I) compound 

    E-Print Network [OSTI]

    Hsieh, Mel-Lin Mary

    1970-01-01

    . It was used without further purification. Triphenylphosphine, practical grade, was purchased from 11 the Metal and Thermit Corp. and was used following recrystallisa- tion from hot 95? alcohol. Aluminum, U. S. P. powder, was purchased from...

  16. Removal of Selenium from Wastewater using ZVI and Hybrid ZVI/Iron Oxide Process 

    E-Print Network [OSTI]

    Yang, Zhen

    2012-12-20

    CN- treatment. Zero-valent iron (ZVI) technology, with some successes in remediating toxic-metal contaminated groundwater remediation, emerges as a potential solution for addressing SeCN- problem. In this study, bench scale tests were conducted to investigate...

  17. Selenium Accumulation in Brassicaceae Plant Species and its Biotransfer to Insect Pollinators

    E-Print Network [OSTI]

    Hladun, Kristen

    2012-01-01

    from plants growing in fly ash from coal-burning electricalfrom New England aster growing in fly ash from coal-burningby bees foraging on fly ash-grown plants. Bull Environ

  18. Sorption of Arsenic, Mercury, Selenium onto Nanostructured Adsorbent Media and Stabilization via Surface Reactions 

    E-Print Network [OSTI]

    Han, Dong Suk

    2011-02-22

    as pH increased. In addition, a surface complexation model (SCM) based on the diffuse layer model (DLM) was used to predict arsenic adsorption envelopes by NTAs under various environmental conditions. The SCM for As(III, V) adsorption by NTAs...

  19. Growing the Tool Box for Medical Imaging: The Selenium-72/Arsenic...

    Office of Science (SC) Website

    methodologies of making self-contained delivery systems for the radioisotope 72As for future clinical applications. The Impact Positron emission tomography (PET) is a powerful...

  20. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOE Patents [OSTI]

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  1. Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide ,,001... M. J. Begarney,1

    E-Print Network [OSTI]

    Li, Lian

    rough quali- tative agreement with the experimental data. Based on more recent, first, University of California, Los Angeles, California 90095 2 Department of Physics and Laboratory for Surface closely match the RDS data, discrepancies in the energies and mag- nitudes of spectral features remain

  2. DESIGN AND ANALYSIS OF AN INTEGRATED PULSE MODULATED S-BAND POWER AMPLIFIER IN GALLIUM NITRIDE PROCESS

    SciTech Connect (OSTI)

    STEVE SEDLOCK

    2012-04-04

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  3. PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics

    Office of Energy Efficiency and Renewable Energy (EERE)

    Low-cost III-V cells will result in a breakthrough in photovoltaic (PV) market by enabling lower LCOE. The project will develop low-cost substrates to template the growth of GaAs.

  4. The radiation bio-effects of gallum-72 on leukemic cells via a gallium-transferrin complex 

    E-Print Network [OSTI]

    Forbes, Christen Douglas

    1999-01-01

    Improved methods for treatment of leukemia would be advantageous for patients and the medical community. This thesis reports results of a study of the cytotoxicity of radiolabeled transferrin in cultured leukemic cells. K-562 cells, from...

  5. An experimental study of the solubility of Gallium(III) oxide in HCl-bearing water vapour

    E-Print Network [OSTI]

    at 200 °C at a pH of $4. The values are very similar to those estimated from data for geothermal wells. INTRODUCTION It has been long known that the gaseous transport of weakly volatile compounds is greatly enhanced-hydrothermal systems are dominated by low-density fluids and, from analyses of vapour inclusions, that such fluids can

  6. Structural, optical, and electrical properties of indium doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

    E-Print Network [OSTI]

    Zhu, Yuankun

    2014-01-01

    and transparent Ti-doped CdO films by pulsed lasermeasurements on boron-doped CdO thin films. J Mater Sci 46:and optical properties of tin-doped CdO films deposited by

  7. Determining the nonparabolicity factor of the CdO conduction band using indium doping and the Drude theory

    E-Print Network [OSTI]

    Mendelsberg, Rueben

    2014-01-01

    conducting oxides. ga- and in-doped cdo thin films grown bycharacterization of aluminum-doped cdo thin films by sol-geland transparent ti-doped cdo films by pulsed laser

  8. Self-Assembled Bilayers on Indium–Tin Oxide (SAB-ITO) Electrodes. A Design for Chromophore–Catalyst Photoanodes

    SciTech Connect (OSTI)

    Glasson, Christopher R. K. [Univ. of North Carolina, Chapel Hill, NC (United States); Song, Wenjing [Univ. of North Carolina, Chapel Hill, NC (United States); Ashford, Dennis L. [Univ. of North Carolina, Chapel Hill, NC (United States); Vannucci, Aaron K. [Univ. of North Carolina, Chapel Hill, NC (United States); Chen, Zuofeng [Univ. of North Carolina, Chapel Hill, NC (United States); Concepcion, Javier J. [Univ. of North Carolina, Chapel Hill, NC (United States); Holland, Patrick L. [Univ. of Rochester, NY (United States); Meyer, Thomas J. [Univ. of North Carolina, Chapel Hill, NC (United States)

    2012-08-02

    A novel approach for creating assemblies on metal oxide surfaces via the addition of a catalyst overlayer on a chomophore monolayer derivatized surface is described. It is based on the sequential self-assembly of a chromophore, [Ru(bpy)(4,4'-(PO3H2bpy)2)]2+, and oxidation catalyst, [Ru(bpy)(P2Mebim2py)OH2]2+, pair, resulting in a spatially separated chromophore–catalyst assembly.

  9. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  10. EXPLORATION AND DEVELOPMENT OF INDIUM-MEDIATED REACTIONS: SYNTHESIS OF DICHLOROINDIUM HYDRIDE, BORANE, AND THEIR APPLICATION TO VARIOUS REDUCTIONS

    E-Print Network [OSTI]

    Saavedra, Jaime Zendejas

    2012-01-01

    groups such as hydroxyl or amine suggests a reactiongroups such as hydroxyl or amine suggests a reactionamines in the presence of functionalities like esters, hydroxyls,

  11. Chromium-Catalyzed Homoaldol Equivalent Reaction, Indium-Mediated Cycloisomerization, and Palladium-Catalyzed Cross-Coupling Reaction 

    E-Print Network [OSTI]

    Kang, Jun

    2011-10-21

    to the cyclopropanolate. A regioselective catalytic homoaldol equivalent reaction of 3-bromo vinyl acetate with aldehydes under Cr(III)-Mn(0) redox condition was developed. This homoaldol equivalent reaction allows access to the 1,4-oxygenated compounds...

  12. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    pressure chemical vapor deposition R. P. Bhatta, B. D. Thoms,a A. Weerasekera, A. G. U. Perera, M. Alevli properties of InN layer grown by high pressure chemical vapor deposition have been studied by high-nitride alloys is challenging under low pressure process conditions due to higher equilibrium vapor pressure

  13. Nanoscale Electrical Conductivity and Surface Spectroscopic Studies of Indium-Tin Oxide Yish-Hann Liau and Norbert F. Scherer*

    E-Print Network [OSTI]

    Scherer, Norbert F.

    such as flat panel displays, solar cells, and organic electroluminescence devices due to its unique combination of such films. The impact of this study on the future development of optoelectronic devices is discussed. I

  14. International Conference on Indium Phosphide and Related Materials 2004, 31 May -4 June, Kagoshima, Japan MICROELECTROMECHANICAL TUNABLE LONG-

    E-Print Network [OSTI]

    MacDonald, Noel C.

    , Kagoshima, Japan MICROELECTROMECHANICAL TUNABLE LONG- WAVELENGTH VERTICAL-CAVITY SEMICONDUCTOR OPTICAL is controlled by phase tuning of a suspended distributed Bragg reflector (DBR). Electrostatic force generated at the peaks of the standing optical wave in the 5/2- cavity, and optimized for optical pumping at 980 nm

  15. P-28 / D. R. Cairns P-28: The Effect of Thermal Shrinkage on Indium Tin Oxide Coated

    E-Print Network [OSTI]

    Cairns, Darran

    on polyimide films (Kapton E DuPont) [10-11]. Polyimide is a high performance engineering polymer with a Young's modulus of 5 GPa. The excellent mechanical properties of the polyimide films lend themselves properties to polyimide, but superior optical properties. ITO is commonly used as the conducting electrode

  16. Self-organization of a new fluorous porphyrin and C60 films on indium-tin-oxide electrodew

    E-Print Network [OSTI]

    Liu, Gang-yu

    ­10 The porphyrin­fullerene com- plexes are appealing as materials for solar-energy conversion and energy storage polarizability of fluorine atoms confers a low surface energy to materials14 composed of this porphyrin. 5 building blocks for the fabrication of photoactive materials. There are numerous studies on the spontaneous

  17. IEEE ELECTRON DEVICE LETTERS, VOL. 24, NO. 5, MAY 2003 315 DC Sputtered Indium-Tin Oxide Transparent Cathode

    E-Print Network [OSTI]

    severe and relatively independent of the sputtering power. Consequently, a high dc sputtering power-injecting electrode [6]. For a given CuPc thickness, the sputtering power must be high enough to produce a sufficient damage to the underlying emission layer. For a given sputtering power, the CuPc must be thin enough

  18. STUDIES OF ISOSPIN QUINTETS AND NEUTRON-DEFICIENT INDIUM ISOTOPES WITH THE ON-LINE MASS ANALYSIS SYSTEM RAMA

    E-Print Network [OSTI]

    Cerny, J.

    2010-01-01

    proton-rich If2p shell nuclides. In addition, the extensiveon-line mass analysis of nuclides of many chemical elementsexcess determinations for nuclides in this region should

  19. EXPLORATION AND DEVELOPMENT OF INDIUM-MEDIATED REACTIONS: SYNTHESIS OF DICHLOROINDIUM HYDRIDE, BORANE, AND THEIR APPLICATION TO VARIOUS REDUCTIONS

    E-Print Network [OSTI]

    Saavedra, Jaime Zendejas

    2012-01-01

    found that hydrogen gas along with palladium-carbon inof palladium on carbon and cyclohexene as a hydrogen donor (

  20. EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes

    E-Print Network [OSTI]

    over that of a conventional OLED without an oxide capped anode. 1. Introduction Organic light for Organic Light-emitting Diodes Chengfeng Qiu, Haiying Chen, Zhilang Xie, Man Wong and Hoi Sing Kwok Center of metals enhance while other oxides degrade the hole-injection and quantum efficiencies of organic light

  1. On the Mass Eigenstate Composition of the 8B Neutrinos from the Sun

    E-Print Network [OSTI]

    A. Kopylov; V. Petukhov

    2007-04-19

    The present data of gallium experiments provide indirectly the only experimental limit on the fraction of $\

  2. Nanoscale metals and semiconductors for the storage of solar energy in chemical bonds

    E-Print Network [OSTI]

    Manthiram, Karthish

    2015-01-01

    hydrogen evolution reaction overpotentials and adsorbate binding energies, such as zinc, gallium, palladium,

  3. Method for the chemical separation of GE-68 from its daughter Ga-68

    DOE Patents [OSTI]

    Fitzsimmons, Jonathan M.; Atcher, Robert W.

    2010-06-01

    The present invention is directed to a generator apparatus for separating a daughter gallium-68 radioisotope substantially free of impurities from a parent gernanium-68 radioisotope, including a first resin-containing column containing parent gernanium-68 radioisotope and daughter gallium-68 radioisotope, a source of first eluent connected to said first resin-containing column for separating daughter gallium-68 radioisotope from the first resin-containing column, said first eluent including citrate whereby the separated gallium is in the form of gallium citrate, a mixing space connected to said first resin-containing column for admixing a source of hydrochloric acid with said separated gallium citrate whereby gallium citrate is converted to gallium tetrachloride, a second resin-containing column for retention of gallium-68 tetrachloride, and, a source of second eluent connected to said second resin-containing column for eluting the daughter gallium-68 radioisotope from said second resin-containing column.

  4. 6638 Journal of the American Chemical Society / 101:22 / October 24, I979 Selenium Stabilized Carbanions. Preparation of

    E-Print Network [OSTI]

    Reich, Hans J.

    into methyl phenyl sulfide increased the kinetic acidity by a factor of 22.4. A variety of @-hydroxyselenides)methane) to carbonyl compounds. These @-hydroxyselen- ides are converted to olefins on treatment with rnethanesulfonyl

  5. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    significant impact and supplement environmental assessment,environmental impact statement and environmental impactenvironmental impact statement and environmental impact

  6. Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon

    E-Print Network [OSTI]

    Reading, Arthur H. (Arthur Henry)

    2009-01-01

    'Black silicon' refers to silicon that has been treated in a laser-ablation process to incorporate large amounts of chalcogen dopants. The material has been found to have greatly increased absorbance of visible and infared ...

  7. Selenium Fractionation and Cycling in the Intertidal Zone of the Carquinez Strait - October 1995 to December 1995

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    development of the pyrite Se extraction method, and 3)improvement of the extraction methods for elemental Se, 2)application of extraction methods to suspended particulate

  8. Quantification, Localization, and Speciation of Selenium in Seeds of Canola and Two Mustard Species Compared to Seed-Meals Produced

    E-Print Network [OSTI]

    and hydraulically pressed seed meals. Specifically, the concentrations of total Se were measured, the localization Compared to Seed-Meals Produced by Hydraulic Press Gary S. Banuelos,*,, Spencer S. Walse, Soo In Yang Service, U.S. Department of Agriculture, Parlier, California 93648, United States Center for Irrigation

  9. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    experimental ponds. Water, Air, and Soil Pollution 62(1–2):Pollution [SFBRWQCB] California San Francisco Bay Regional Water

  10. Elevated blood selenium levels in the Brazilian Amazon Melanie Lemire a,d,*, Donna Mergler a,d

    E-Print Network [OSTI]

    Long, Bernard

    'environnement (CINBIOSE), Universite´ du Que´bec a` Montre´al, C.P. 8888, Succ. Centre-Ville, Montre´al, Que´bec, Canada H´al, 477 Pierre de Coubertin, Montre´al, Que´bec, Canada H1V 1B3 d Institut des sciences de l'environnement, Universite´ du Que´bec a` Montre´al, C.P. 8888, Succ. Centre-Ville, Montre´al, Que´bec, Canada H3C 3P8

  11. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    clapper rail Delta: insect- based food webs location- and2008a). a b c Delta: insect-based food webs* dissolved Se KdFood webs illustrated for Delta inhabitants include aquatic insects

  12. Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

    SciTech Connect (OSTI)

    Chasin, Adrian Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul; Simoen, Eddy; Gielen, Georges

    2014-02-24

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ?10{sup 19}?cm{sup ?3}?eV{sup ?1} at the conduction band edge and a value of ?10{sup 17}?cm{sup ?3}?eV{sup ?1} at an energy of 0.55?eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

  13. Method and system for the combination of non-thermal plasma and metal/metal oxide doped .gamma.-alumina catalysts for diesel engine exhaust aftertreatment system

    DOE Patents [OSTI]

    Aardahl, Christopher L. (Richland, WA); Balmer-Miller, Mari Lou (West Richland, WA); Chanda, Ashok (Peoria, IL); Habeger, Craig F. (West Richland, WA); Koshkarian, Kent A. (Peoria, IL); Park, Paul W. (Peoria, IL)

    2006-07-25

    The present disclosure pertains to a system and method for treatment of oxygen rich exhaust and more specifically to a method and system that combines non-thermal plasma with a metal doped .gamma.-alumina catalyst. Current catalyst systems for the treatment of oxygen rich exhaust are capable of achieving only approximately 7 to 12% NO.sub.x reduction as a passive system and only 25 40% reduction when a supplemental hydrocarbon reductant is injected into the exhaust stream. It has been found that treatment of an oxygen rich exhaust initially with a non-thermal plasma and followed by subsequent treatment with a metal doped .gamma.-alumina prepared by the sol gel method is capable of increasing the NO.sub.x reduction to a level of approximately 90% in the absence of SO.sub.2 and 80% in the presence of 20 ppm of SO.sub.2. Especially useful metals have been found to be indium, gallium, and tin.

  14. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  15. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    SciTech Connect (OSTI)

    Ha, Tae-Jun

    2014-10-15

    We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (?3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  16. Method of preparing doped oxide catalysts for lean NOx exhaust

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-09

    The lean NOx catalyst includes a substrate, an oxide support material, preferably .gamma.-alumina deposited on the substrate and a metal or metal oxide promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium cerium, and vanadium, and oxides thereof, and any combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between 80 and 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to about 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  17. Metal/metal oxide doped oxide catalysts having high deNOx selectivity for lean NOx exhaust aftertreatment systems

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-16

    A lean NOx catalyst and method of preparing the same is disclosed. The lean NOx catalyst includes a ceramic substrate, an oxide support material, preferably .gamma.-alumina, deposited on the substrate and a metal promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium, cerium, vanadium, oxides thereof, and combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between about 80 to 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  18. Monolithically integrated Helmholtz coils by 3-dimensional printing

    SciTech Connect (OSTI)

    Li, Longguang [Department of Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Abedini-Nassab, Roozbeh; Yellen, Benjamin B., E-mail: yellen@duke.edu [Department of Electrical Engineering, University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Department of Mechanical Engineering and Materials Science, Duke University, P.O. Box 90300, Hudson Hall, Durham, North Carolina 27708 (United States)

    2014-06-23

    3D printing technology is of great interest for the monolithic fabrication of integrated systems; however, it is a challenge to introduce metallic components into 3D printed molds to enable broader device functionality. Here, we develop a technique for constructing a multi-axial Helmholtz coil by injecting a eutectic liquid metal Gallium Indium alloy (EGaIn) into helically shaped orthogonal cavities constructed in a 3D printed block. The tri-axial solenoids each carry up to 3.6?A of electrical current and produce magnetic field up to 70?G. Within the central section of the coil, the field variation is less than 1% and is in agreement with theory. The flow rates and critical pressures required to fill the 3D cavities with liquid metal also agree with theoretical predictions and provide scaling trends for filling the 3D printed parts. These monolithically integrated solenoids may find future applications in electronic cell culture platforms, atomic traps, and miniaturized chemical analysis systems based on nuclear magnetic resonance.

  19. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    SciTech Connect (OSTI)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15

    Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  20. Production data on 0.55 eV InGaAs thermophotovoltaic cells

    SciTech Connect (OSTI)

    Wojtzuk, S.; Colter, P.; Charache, G.; Campbell, B.

    1996-05-01

    Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm{sup 2} short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 {micro}m. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss.