National Library of Energy BETA

Sample records for indium gallium selenium

  1. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  2. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S.; Nekuda, Jennifer A.

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  3. Copper Indium Gallium Diselenide | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Since its initial development, copper indium diselenide (CuInSe2) thin-film technology has been considered promising for solar cells because of its favorable electronic and optical ...

  4. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Hasoon, Falah S.; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  5. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2000-01-01

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  6. Hydrogenation of palladium rich compounds of aluminium, gallium and indium

    SciTech Connect (OSTI)

    Kohlmann, H.

    2010-02-15

    Palladium rich intermetallic compounds of aluminium, gallium and indium have been studied before and after hydrogenation by powder X-ray diffraction and during hydrogenation by in situ thermal analysis (DSC) at hydrogen gas pressures up to 39 MPa and temperatures up to 700 K. Very weak DSC signals and small unit cell increases of below 1% for AlPd{sub 2}, AlPd{sub 3}, GaPd{sub 2}, Ga{sub 5}Pd{sub 13}, In{sub 3}Pd{sub 5}, and InPd{sub 2} suggest negligible hydrogen uptake. In contrast, for both tetragonal modifications of InPd{sub 3} (ZrAl{sub 3} and TiAl{sub 3} type), heating to 523 K at 2 MPa hydrogen pressure leads to a rearrangement of the intermetallic structure to a cubic AuCu{sub 3} type with an increase in unit cell volume per formula unit by 3.6-3.9%. Gravimetric analysis suggests a composition InPd{sub 3}H{sub a}pprox{sub 0.8} for the hydrogenation product. Very similar behaviour is found for the deuteration of InPd{sub 3}. - Graphical abstract: In situ differential scanning calorimetry of the hydrogenation of tetragonal InPd{sub 3} (ZrAl{sub 3} type) at 1.3 MPa hydrogen pressure.

  7. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  8. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  9. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    SciTech Connect (OSTI)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  10. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  11. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

    SciTech Connect (OSTI)

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-13

    We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

  12. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect (OSTI)

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. InAs and InGaAs formed by this process decrease an electron barrier height. Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, JV measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  13. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect (OSTI)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  14. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  15. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  16. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  17. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    SciTech Connect (OSTI)

    Wissman, J.; Finkenauer, L.; Deseri, L.; Majidi, C.

    2014-10-14

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage Φ to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ϑ. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of Φ. Based on this theory, we predict a dependency of ϑ on Φ that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  18. Gallium and indium imaging agents. 2. Complexes of sulfonated catecholyamide sequestering agents

    SciTech Connect (OSTI)

    Pecoraro, V.L.; Wong, G.B.; Raymond, K.N.

    1982-06-01

    The solution equilibria for the reaction of Ga(III) and In(III) with the hexadentate ligands N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,3,5-tris(aminomethyl)benzene (MECAMS) and N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,5,10-triazadecane (3,4-LICAMS) and the bidentate catechol N,N-dimethyl-2,3-dihydroxy-5-sulfonatobenzamide (DMBS) have been determined on 0.1 M KNO/sub 3/ at 25/sup 0/C. Both Ga(III) and In(III) are coordinated by three catecholate groups at high pH and have formation constants of the order ..beta../sub 110/ = 10/sup 38/ M/sup -1/. As the acidity of the medium is increased, the metal complexes of the hexadentate sequestering agents undergo protonation reactions. For the determination of the nature of the protonated metal chelates, the stretching frequency of the amide carbonyl has been monitored in D/sub 2/O by Fourier transform infrared spectroscopy (FT IR). These data support a series of two one-proton steps to form a mixed salicylate-catecholate coordination about the metal ion. In the salicylate bonding mode the metal is bound through the ortho phenolic oxygen and the amide cabonyl whereas catecholate coordination is via the adjacent phenols. In contrast, protonation of the M/sup III/(DMBS)/sub 3/ complexes results in dissociation of a catechol moiety to form M/sup III/(DMBS)/sub 2/. The potential use of these compounds as tumor-imaging agents in cancer diagnosis is discussed, with specific attention to the role of the gallium transferrin complex.

  19. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect (OSTI)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  20. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect (OSTI)

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2?V is ?10{sup 9} ? for a device with the radius of 50??m) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2?V is ?10{sup 3} ? for the radius of 50??m) by applying a voltage pulse (e.g., 10?V/1??s). The WORM device has good data-retention and reading-endurance capabilities.

  1. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect (OSTI)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  2. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    SciTech Connect (OSTI)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van; Xu, M.; Vroon, Z.; Belt, R. van de; Buskens, P. E-mail: buskens@dwi.rwth-aachen.de

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  3. Johanna Solar Technology GmbH JST | Open Energy Information

    Open Energy Info (EERE)

    Havel, Brandenburg, Germany Zip: D-14772 Sector: Solar Product: German manufacturer of copper-indium-gallium-sulphide-selenium (CIGSSe) thin-film solar modules. References: Johanna...

  4. Time-resolved photoluminescence of ytterbium in indium phosphide. Master's thesis

    SciTech Connect (OSTI)

    Bumgarner, T.F.

    1988-12-01

    Time-resolved photoluminescence of ytterbium (Yb) implanted in indium phosphide (Inp) was the primary emphasis of this research. The decay lifetimes of the 1002-nm Yb emission were investigated as a function of temperature. Initial attempts were made to investigate as a function of temperature. Initial attempts were made to investigate aluminum gallium arsenide (AlGaAs) implanted with ytterbium.

  5. Traps identification in Copper-Indium-Gallium-Sulfur-Selenide...

    Office of Scientific and Technical Information (OSTI)

    Solar Cells Completed with Various Buffer Layers by Deep Level Transient Spectroscopy Current-voltage ... devices cells with high and low efficiencies were studied. ...

  6. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    stresses, defects, and dislocations. In addition, the small as-deposited indium grains grow into large crystals at ambient conditions. Indium and its compounds have many...

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12.3.2 to investigate the small-scale mechanics of indium nanostructures. Scanning x-ray microdiffraction (SXRD) studies revealed that the indium microstructure is typical...

  8. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended...

  9. Liquid precursor for deposition of indium selenide and method of preparing the same

    SciTech Connect (OSTI)

    Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

    2015-09-22

    Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

  10. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath

    2007-11-20

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  11. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    SciTech Connect (OSTI)

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  12. Gallium nitride nanotube lasers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Changyi; Liu, Sheng; Hurtado, Antonio; Wright, Jeremy Benjamin; Xu, Huiwen; Luk, Ting Shan; Figiel, Jeffrey J.; Brener, Igal; Brueck, Steven R. J.; Wang, George T.

    2015-01-01

    Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

  13. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Mechanical Behavior of Indium Nanostructures Print Wednesday, 26 May 2010 00:00 Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale

  14. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  15. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  16. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  17. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  18. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  19. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  20. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    have a significant impact on the commercial success of these novel devices. Scanning electron microscopy image of an indium pillar characterized by scanning x-ray...

  1. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical...

  2. Potential effects of gallium on cladding materials

    SciTech Connect (OSTI)

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  3. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  4. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  5. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    26 May 2010 00:00 Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical...

  6. Selenium semiconductor core optical fibers

    SciTech Connect (OSTI)

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  7. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, Dennis R.

    1993-01-01

    Methods for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72.

  8. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, D.R.

    1993-04-20

    Methods are described for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72.

  9. Gallium arsenide recycle chemistry and metallurgy

    SciTech Connect (OSTI)

    Bartlett, R.W.

    1987-03-23

    Research was successfully conducted on a smelting approach to separate gallium from arsenic using a liquid copper alloy to collect arsenic while oxidizing the gallium into a soda-silica slag. The slag and copper form two immiscible liquid phases. With GaAs in powder form, smelting at 1150 to 1220{degree}C yields 98% of the gallium in the slag and at least 96% of the arsenic in the copper. The gallium concentration in this slag is, relative to other sources, very high, and it can be processed further to obtain crude gallium. The effect of chemical oxidizers on arsenic and gallium distribution between slag and copper was determined. The solidified copper-arsenic alloy is environmentally inert. However, any precious metals present with the electronic scrap will nearly completely collect in the copper. Commercial copper refineries are capable of recovering precious metals from the copper-arsenic alloy, and are equipped to handle large amounts of arsenic when compared with the amount of arsenic used in GaAs devices, even with many fold future expansions.

  10. Generator for gallium-68 and compositions obtained therefrom

    DOE Patents [OSTI]

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

  11. BES Web Highlight: Single-mode gallium nitride nanowire lasers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Web Highlight: Single-mode gallium nitride nanowire lasers - Sandia Energy Energy Search ... Twitter Google + Vimeo GovDelivery SlideShare BES Web Highlight: Single-mode gallium ...

  12. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  13. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  14. Solar cell with a gallium nitride electrode

    DOE Patents [OSTI]

    Pankove, Jacques I.

    1979-01-01

    A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

  15. High intensity x-ray source using liquid gallium target

    DOE Patents [OSTI]

    Smither, Robert K.; Knapp, Gordon S.; Westbrook, Edwin M.; Forster, George A.

    1990-01-01

    A high intensity x-ray source that uses a flowing stream of liquid gallium as a target with the electron beam impinging directly on the liquid metal.

  16. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate

    Broader source: Energy.gov [DOE]

    This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

  17. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  18. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, D.R.

    1994-12-06

    Methods and apparatus are described for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72. The invention provides apparatus which can be located at a site where arsenic-72 is used, for purposes such as PET imaging, to produce arsenic-72 as needed, since the half-life of arsenic-72 is very short. 2 figures.

  19. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, Dennis R.

    1995-01-01

    Methods and apparatus for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72. The invention provides apparatus which can be located at a site where arsenic-72 is used, for purposes such as PET imaging, to produce arsenic-72 as needed, since the half-life of arsenic-72 is very short.

  20. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, Dennis R.

    1994-01-01

    Methods and apparatus for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72. The invention provides apparatus which can be located at a site where arsenic-72 is used, for purposes such as PET imaging, to produce arsenic-72 as needed, since the half-life of arsenic-72 is very short.

  1. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

    DOE Patents [OSTI]

    Dhere, Neelkanth G.; Kadam, Ankur A.

    2009-12-15

    A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

  2. Laser photochemistry of gallium-containing compounds. [Trimethylgallium

    SciTech Connect (OSTI)

    Baughcum, S.L.; Oldenborg, R.C.

    1986-01-01

    The production of gas-phase gallium atoms in the photolysis of trimethylgallium has been investigated at 193 nm and at other laser wavelengths. Ground state (4 /sup 2/P/sup 0//sub 1/2) and metastable (4 /sup 2/P/sup 0//sub 3/2/) gallium atoms are detected using laser-induced fluorescence techniques. Our results indicate that gallium atoms continue to be produced at long times after the laser pulse. The observed dependence on photolysis laser fluence, trimethylgallium pressure, and buffer gas pressure are consistent with a mechanism in which highly excited gallium methyl radicals undergo unimolecular decomposition to produce gallium atoms. Since this process is observed to happen on the time scale of hundreds of microseconds, these results have important implications for studies of metal deposition and direct laser writing by laser photolysis of organometallic compounds. 31 refs., 5 figs.

  3. Compatibility of ITER candidate structural materials with static gallium

    SciTech Connect (OSTI)

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-12-01

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400{degrees}C, corrosion rates are {approx}4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400{degrees}C are {ge}88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400{degrees}C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized.

  4. Interactions of Zircaloy Cladding with Gallium: Final Report

    SciTech Connect (OSTI)

    D.F. Wilson; E.T. Manneschmidt; J.F. King; J.P. Strizak; J.R. DiStefano

    1998-09-01

    The U.S. Department of Energy has established a dual-track approach to the disposition of plutonium arising from the dismantling of nuclear weapons. Both immobilization and reactor-based mixed-oxide (MOX) fuel technologies are being evaluated. The reactor-based MOX fuel option requires assessment of the potential impact of concentrations of gallium (on the order of 1 to 10 ppm), not present in conventional MOX fhel, on cladding material performance. Three previous repmts"3 identified several compatibility issues relating to the presence of gallium in MOX fuel and its possible reaction with fiel cladding. Gallium initially present in weapons-grade (WG) plutonium is largely removed during processing to produce MOX fhel. After blending the plutonium with uranium, only 1 to 10 ppm gallium is expected in the sintered MOX fuel. Gallium present as gallium oxide (G~OJ could be evolved as the suboxide (G~O). Migration of the evolved G~O and diffusion of gallium in the MOX matrix along thermal gradients could lead to locally higher concentrations of G~03. Thus, while an extremely low concentration of gallium in MOX fiel almost ensures a lack of significant interaction of gallium whh Zircaloy fhel cladding, there remains a small probability that corrosion effects will not be negligible. General corrosion in the form of surface alloying resulting from formation of intermetallic compounds between Zircaloy and gallium should be ma& limited and, therefore, superficial because of the expected low ratio of gallium to the surface area or volume of the Zircaloy cladding. Although the expected concentration of gallium is low and there is very limited volubility of gallium in zirconium, especially at temperatures below 700 "C,4 grain boundary penetration and liquid metal embrittlement (LME) are forms of localized corrosion that were also considered. One fuel system darnage mechanism, pellet clad interaction, has led to some failure of the Zircaloy cladding in light-water reactors (LWRS

  5. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect (OSTI)

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8??10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0??10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

  6. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Wednesday, 21 December 2005 00:00 Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features

  7. Generator for ionic gallium-68 based on column chromatography

    DOE Patents [OSTI]

    Neirinckx, Rudi D.; Davis, Michael A.

    1981-01-01

    A physiologically acceptable solution of gallium-68 fluorides, having an activity of 0.1 to 50 millicuries per milliliter of solution is provided. The solution is obtained from a generator comprising germanium-68 hexafluoride bound to a column of an anion exchange resin which forms gallium-68 in situ by eluting the column with an acid solution to form a solution containing .sup.68 Ga-fluorides. The solution then is neutralized prior to administration.

  8. High-resolution imaging of selenium in kidneys: a localized selenium pool associated with glutathione peroxidase 3

    SciTech Connect (OSTI)

    Malinouski, M.; Kehr, S.; Finney, L.; Vogt, S.; Carlson, B.A.; Seravalli, J.; Jin, R.; Handy, D.E.; Park, T.J.; Loscalzo, J.; Hatfield, D.L.; Gladyshev, V.N.

    2012-04-17

    Recent advances in quantitative methods and sensitive imaging techniques of trace elements provide opportunities to uncover and explain their biological roles. In particular, the distribution of selenium in tissues and cells under both physiological and pathological conditions remains unknown. In this work, we applied high-resolution synchrotron X-ray fluorescence microscopy (XFM) to map selenium distribution in mouse liver and kidney. Liver showed a uniform selenium distribution that was dependent on selenocysteine tRNA{sup [Ser]Sec} and dietary selenium. In contrast, kidney selenium had both uniformly distributed and highly localized components, the latter visualized as thin circular structures surrounding proximal tubules. Other parts of the kidney, such as glomeruli and distal tubules, only manifested the uniformly distributed selenium pattern that co-localized with sulfur. We found that proximal tubule selenium localized to the basement membrane. It was preserved in Selenoprotein P knockout mice, but was completely eliminated in glutathione peroxidase 3 (GPx3) knockout mice, indicating that this selenium represented GPx3. We further imaged kidneys of another model organism, the naked mole rat, which showed a diminished uniformly distributed selenium pool, but preserved the circular proximal tubule signal. We applied XFM to image selenium in mammalian tissues and identified a highly localized pool of this trace element at the basement membrane of kidneys that was associated with GPx3. XFM allowed us to define and explain the tissue topography of selenium in mammalian kidneys at submicron resolution.

  9. Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating

    SciTech Connect (OSTI)

    Wang, Liang; Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Berry, J. J.; Ginley, D. S.; Gaspar, Daniel J.; Padmaperuma, Asanga B.

    2010-02-15

    The availability of economically-produced and environmentally-stable transparent conductive oxide (TCO) coatings is critical for the development of a variety of electronic devices requiring transparent electrodes. Such devices include liquid crystal display pixels and organic light emitting diodes (OLEDs),[1, 2] solar cell applications,[3, 4] and electrically heated windows.[5, 6] The materials fulfilling these requirements are usually wide band gap inorganic transparent conductive oxides (TCOs). Tin-doped indium oxide, or ITO, has traditionally been used for electronic TCO applications because of its low resistivity, high work function and transparency. Due to the increasing cost and limited supply of indium and its tendency to migrate in to the device, there has been increasing research interest to substitute ITO with an indium-free material. A number of alternative metal oxides and doped oxides have been evaluated as TCO materials with varying degrees of success.[7, 8] Among these alternatives to ITO, gallium-doped zinc oxide (GZO) [2, 9] and aluminium-doped zinc oxide (AZO) [10, 11] have drawn particular attention. These materials have been demonstrated to have resistivities and transparencies approaching those of the best ITO, low toxicity, and much lower materials cost. Although AZO is attractive as a TCO electrode material, GZO features a greater resistance to oxidation as a result of gallium’s greater electronegativity compared to Submitted to 2 aluminum.[12, 13

  10. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect (OSTI)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  11. Thermoelectric Properties of Indium-Filled Skutterudites

    SciTech Connect (OSTI)

    He, Tao; Chen, Jiazhong; Rosenfeld, H. David; Subramanian, M.A.

    2008-09-18

    Structural, electrical, and thermal transport properties of CoSb{sub 3} partially filled with indium are reported. Polycrystalline samples of In{sub x}Co{sub 4}Sb{sub 12} (0 {le} x {le} 0.3) were prepared by solid-state reaction under a gas mixture of 5% H{sub 2} and 95% Ar. The solubility limit of the indium filling voids in CoSb{sub 3} was found to be close to 0.22. Synchrotron X-ray diffraction refinement of the x = 0.2 sample showed that the indium is located in the classic rattler site and has a substantially larger thermal factor than those of Co and Sb. The electrical resistivity, Seebeck coefficients, and thermal conductivity of the In{sub x}Co{sub 4}Sb{sub 12} samples were measured in the temperature range of 300-600 K. All samples showed metal-like behavior, and the large negative Seebeck coefficients indicated n-type conduction. The thermal conductivity decreased with increasing temperature for all samples. A thermoelectric figure-of-merit (ZT) {ge} 1 (n-type) has been achieved when x {ge} 0.2 in In{sub x}Co{sub 4}Sb{sub 12} at 575 K.

  12. Sputtering of neutral and ionic indium clusters

    SciTech Connect (OSTI)

    Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

    1993-10-01

    Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident {approximately}4 keV Ar{sup +} ions. In the secondary neutral mass spectra, indium clusters as large as In{sub 32} were observed. In the secondary ion mass spectra, indium clusters up to In{sub 18}{sup +} were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be {minus}5.6 and {minus}4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions.

  13. Selenium in Oklahoma ground water and soil

    SciTech Connect (OSTI)

    Atalay, A.; Vir Maggon, D.

    1991-03-30

    Selenium with a consumption of 2 liters per day (5). The objectives of this study are: (1) to determine the concentrations of Se in Oklahoma ground water and soil samples. (2) to map the geographical distribution of Se species in Oklahoma. (3) to relate groundwater depth, pH and geology with concentration of Se.

  14. CX-002541: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Emerging Renewables Industries: Copper, Indium, Gallium, Selenium (CIGS) Linear Source Thermal DepositionCX(s) Applied: B2.2, B5.1Date: 05/19/2010Location(s): St. Paul, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  15. Liquid precursor inks for deposition of In--Se, Ga--Se and In--Ga--Se

    SciTech Connect (OSTI)

    Curtis, Calvin J.; Hersh, Peter A.; Miedaner, Alexander; Habas, Susan; van Hest, Maikel; Ginley, David S.

    2015-08-11

    An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone.

  16. Gallium Safety in the Laboratory INEEL/CON-03-00078

    Office of Scientific and Technical Information (OSTI)

    ... 1987, pp. 411-418. 27. F. F. Hahn, R. K. Wolff, and R. F. Henderson, "Gallium Oxide ... Institute, December 1987. 28. R. K. Wolff et al., "Toxicity of Gallium Oxide ...

  17. Gallium based low-interaction anions

    DOE Patents [OSTI]

    King, Wayne A.; Kubas, Gregory J.

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  18. J/{psi} production in indium-indium collisions at SPS energies

    SciTech Connect (OSTI)

    Pillot, P.; Ducroux, L.; Guichard, A.; Tieulent, R.; Arnaldi, R.; Colla, A.; Cortese, P.; Ferretti, A.; Oppedisano, C.; Scomparin, E.; Averbeck, R.; Drees, A.; Banicz, K.; Keil, M.; Castor, J.; Devaux, A.; Force, P.; Manso, F.; Chaurand, B.; Cicalo, C.

    2006-01-12

    The NA60 experiment collected data on dimuon production in indium-indium collisions at 158 GeV/c per incident nucleon, in year 2003, to contribute to the clarification of several questions raised by previous experiments studying high-energy heavy-ion physics at the CERN SPS in search of the quark gluon plasma. Among these previous results stands the observation, by NA50, that the production yield of J/{psi} mesons is suppressed in central Pb-Pb collisions beyond the normal nuclear absorption defined by proton-nucleus data. By comparing the centrality dependence of the suppression pattern between different colliding systems, S-U, Pb-Pb and In-In, we should be able to identify the corresponding scaling variable, and the physics mechanism driving the suppression. In this paper, we will present the ratio of J/{psi} and Drell-Yan production cross-sections in indium-indium collisions, in three centrality bins, and how these values compare to previous measurements. We will also present a study of the transverse momentum distributions of the J/{psi} mesons, in seven centrality bins.

  19. The leaching characteristics of selenium from coal fly ashes

    SciTech Connect (OSTI)

    Wang, T.; Wang, J.; Burken, J.G.; Ban, H.; Ladwig, K.

    2007-11-15

    The leaching characteristics of selenium from several bituminous and subbituminous coal fly ashes under different pH conditions were investigated using batch methods. Results indicated that pH had a significant effect on selenium leaching from bituminous coal ash. The minimum selenium leaching occurred in the pH range between 3 and 4, while the maximum selenium leaching occurred at pH 12. The release of selenium from subbituminous coal ashes was very low for the entire experimental pH range, possibly due to the high content of calcium which can form hydration or precipitation products as a sink for selenium. The adsorption results for different selenium species indicated that Se(VI) was hardly adsorbable on either bituminous coal ashes or subbitumminous coal ashes at any pH. However, Se(I) was highly adsorbed by bituminous coal ashes under acidic pH conditions and was mostly removed by subbitumminous coal ashes across the entire pH range. This result suggests that the majority of selenium released from the tested fly ashes was Se(IV). A speciation-based model was developed to simulate the adsorption of Se(IV) on bituminous coal fly ash, and the pH-independent adsorption constants of HSeO{sup 3-} and SeO{sub 3}{sup 2-} were determined. The modeling approach is useful for understanding and predicting the release process of selenium from fly ash.

  20. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOE Patents [OSTI]

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  1. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOE Patents [OSTI]

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  2. Low frequency pressure modulation of indium antimonide

    SciTech Connect (OSTI)

    Hallock, Gary A.; Meier, Mark A.

    2012-07-15

    A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient {alpha} of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

  3. First results from the Soviet-American Gallium Experiment

    SciTech Connect (OSTI)

    Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Eroshkina, L.A.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Y.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zakharov, Y.; Zatsepin, G.T.; Zhandarov, V.I. . Inst. Yadernykh Issledovanij); Bowl

    1990-01-01

    The Soviet-American Gallium Experiment is the first experiment able to measure the dominant flux of low energy p-p solar neutrinos. Four extractions made during January to May 1990 from 30 tons of gallium have been counted and indicate that the flux is consistent with 0 SNU and is less than 72 SNU (68% CL) and less than 138 SNU (95% CL). This is to be compared with the flux of 132 SNU predicted by the Standard Solar Model. 10 refs., 4 figs., 1 tab.

  4. 03.01.16 RH Nickel-Gallium - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CO2 electrochemical reduction catalyzed by bimetallic materials at low overpotential Torelli, D. A., Francis, S.A. et al. Nickel-Gallium-Catalyzed Electrochemical Reduction of CO2 to Highly Reduced Products at Low Overpotentials. ACS Catalysis, 6, 2100-2104, DOI: 10.1021/acscatal.5b02888 (2016). Scientific Achievement Electrocatalytic reduction of CO2 to highly reduced C2 (ethylene and ethane) and C1 (methane) products was accomplished on three different phases of nickel-gallium films at low

  5. Ionic liquid-induced synthesis of selenium nanoparticles

    SciTech Connect (OSTI)

    Langi, Bhushan; Shah, Chetan; Singh, Krishankant; Chaskar, Atul; Kumar, Manmohan; Bajaj, Parma N.

    2010-06-15

    A simple wet chemical method has been used to synthesize selenium nanoparticles by the reaction of ionic liquid with sodium selenosulphate, a selenium precursor, in the presence of polyvinyl alcohol stabilizer, in aqueous medium. The method is capable of producing spherical selenium nanoparticles in the size range of 76-150 nm under ambient conditions. This is a first report on the production of nano-selenium assisted by an ionic liquid. The synthesized nanoparticles can be separated easily from the aqueous sol by a high-speed centrifuge machine, and can be re-dispersed in an aqueous medium. The synthesized selenium nanoparticles have been characterized by X-ray diffraction, energy dispersive X-ray analysis, differential scanning calorimetry and transmission electron microscopy techniques.

  6. Compatibility of ITER candidate materials with static gallium

    SciTech Connect (OSTI)

    Luebbers, P.R.; Chopra, O.K.

    1995-09-01

    Corrosion tests have been conducted to determine the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor (ITER) first wall/blanket systems, e.g., Type 316 stainless steel (SS), Inconel 625, and Nb-5 Mo-1 Zr. The results indicate that Type 316 SS is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400 C, corrosion rates for Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy are {approx} 4.0, 0.5, and 0.03 mm/yr, respectively. Iron, nickel, and chromium react rapidly with gallium. Iron shows greater corrosion than nickel at 400 C ({ge} 88 and 18 mm/yr, respectively). The present study indicates that at temperatures up to 400 C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The growth of intermetallic compounds may control the overall rate of corrosion.

  7. Self- and zinc diffusion in gallium antimonide

    SciTech Connect (OSTI)

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak

  8. Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Ozone | Argonne National Laboratory Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Title Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone Publication Type Journal Article Year of Publication 2016 Authors Mane, AU, Allen, AJ, Kanjolia, RK, Elam, JW Journal Journal of Physical Chemistry C Volume 120 Start Page 9874 Issue 18 Pagination 10 Date Published 04182016 Abstract We investigated the atomic layer deposition (ALD)

  9. Indium Phosphide Polycrystalline Films on Metal Foil for PV Applications -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Innovation Portal Indium Phosphide Polycrystalline Films on Metal Foil for PV Applications Lawrence Berkeley National Laboratory Contact LBL About This Technology Publications: PDF Document Publication Zheng, M., Yu, Z., Seok, T.J., Chen, Y-Z., Kapadia, R., Takei, K., Aloni, S., Ager, J.W., Wu, M., Chueh, Y-L., Javey, A. "High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition," Journal of Applied Physics 111,

  10. NREL: Process Development and Integration Laboratory - Copper...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Copper Indium Gallium Diselenide Cluster Tool Capabilities The Copper Indium Gallium Diselenide (CIGS) cluster tool in the Process Development and Integration Laboratory offers ...

  11. Electron emitting device and method of making the same

    DOE Patents [OSTI]

    Olsen, Gregory Hammond; Martinelli, Ramon Ubaldo; Ettenberg, Michael

    1977-04-19

    A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

  12. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect (OSTI)

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro; PRESTO, Japan Science and Technology Agency , Honcho Kawaguchi, 3320012 Saitama

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  13. Preparation of cuxinygazsen precursor films and powders by electroless deposition

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Batchelor, Wendi Kay; Wiesner, Holm; Ramanathan, Kannan; Noufi, Rommel

    1999-01-01

    A method for electroless deposition of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) precursor films and powders onto a metallic substrate comprising: preparing an aqueous bath solution of compounds selected from the group consisting of: I) a copper compound, a selenium compound, an indium compound and gallium compound; II) a copper compound, a selenium compound and an indium compound; III) a selenium compound, and indium compound and a gallium compound; IV) a selenium compound and a indium compound; and V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3); adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; and initiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) from the aqueous bath solution onto a metallic substrate.

  14. Application of the bounds-analysis approach to arsenic and gallium...

    Office of Scientific and Technical Information (OSTI)

    Details In-Document Search This content will become publicly available on January 23, 2016 Title: Application of the bounds-analysis approach to arsenic and gallium antisite...

  15. Gallium Safety in the Laboratory INEEL/CON-03-00078

    Office of Scientific and Technical Information (OSTI)

    or represents that its use by such third party would not infringe privately owned rights. ... gallium surfaces with oils from human skin, and gloves protect against puncture wounds. ...

  16. HIGH-QUALITY, LOW-COST BULK GALLIUM NITRIDE SUBSTRATES GROWN...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    by 60%, and energy for information technology infrastructure power delivery by 20%. High-Quality, Low-Cost Bulk Gallium Nitride Substrates (1009.69 KB) More Documents & ...

  17. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  18. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  19. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  20. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  1. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  2. Electrochemical Solution Growth: Gallium Nitride Crystal Growth - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Vehicles and Fuels Vehicles and Fuels Building Energy Efficiency Building Energy Efficiency Find More Like This Return to Search Electrochemical Solution Growth: Gallium Nitride Crystal Growth Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (886 KB) Technology Marketing SummarySandia National Laboratories has developed a disruptive new crystal growth technology, called Electrochemical Solution Growth (ESG).

  3. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  4. Mobility of indium on the ZnO(0001) surface

    SciTech Connect (OSTI)

    Heinhold, R.; Reeves, R. J.; Allen, M. W.; Williams, G. T.; Evans, D. A.

    2015-02-02

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  5. Equation of state of liquid Indium under high pressure

    SciTech Connect (OSTI)

    Li, Huaming E-mail: mo.li@gatech.edu; Li, Mo E-mail: mo.li@gatech.edu; Sun, Yongli

    2015-09-15

    We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

  6. Preliminary survey report: control technology for gallium arsenide processing at Morgan Semiconductor Division, Garland, Texas

    SciTech Connect (OSTI)

    Lenihan, K.L.

    1987-03-01

    The report covers a walk through survey made of the Morgan Semiconductor Facility in Garland, Texas, to evaluate control technology for gallium-arsenide dust in the semiconductor industry. Engineering controls included the synthesis of gallium-arsenide outside the crystal pullers to reduce arsenic residues in the pullers, also reducing worker exposure to arsenic during cleaning of the crystal pullers.

  7. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOE Patents [OSTI]

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  8. JV Task - 116 Selenium's Role in the Seafood Safety Issue

    SciTech Connect (OSTI)

    Nicholas Ralston; Laura Raymond

    2009-03-30

    Continuing studies under these three funded projects - (JV Task 77 The Health Implications of the Mercury-Selenium Interaction, JV Task 96 Investigating the Importance of the Mercury-Selenium Interaction, and JV Task 116 Selenium's Role in the Seafood Safety Issue) - were performed to determine the effects of different levels of dietary mercury and selenium on the growth and development of test animals, and related tissue analyses, to understand the protective benefits of dietary selenium in reference to low-level exposure to mercury. Maternal exposure to methylmercury from seafood has been found to cause neurodevelopmental harm in children. However, significant nutritional benefits will be lost if fish consumption is needlessly avoided. The results of these studies support the hypothesis that intracellular Se itself is the physiologically important biomolecule and that the harm of mercury toxicity arises when Hg abundance becomes great enough to bind a significant portion of intracellular Se in vulnerable tissues such as the brain. Formation of HgSe limits bioavailability of Se for synthesis of Se-dependent enzymes, particularly in brain tissues. When production of these enzymes is impaired, the loss of their numerous essential functions results in the signs and symptoms of Hg toxicity. The finding that one mole of Se protects against many moles of Hg indicates that its beneficial effect is not due to sequestration of mercury as HgSe but rather due to the biological activity of the Se. Therefore, the selenium content of seafoods must be considered along with their methylmercury contents in evaluating the effect of dietary exposure to mercury.

  9. Study on natural convection capability of liquid gallium for passive decay heat removal system (PDHRS)

    SciTech Connect (OSTI)

    Kang, S.; Ha, K. S.; Lee, S. W.; Park, S. D.; Kim, S. M.; Seo, H.; Kim, J. H.; Bang, I. C.

    2012-07-01

    The safety issues of the SFRs are important due to the fact that it uses sodium as a nuclear coolant, reacting vigorously with water and air. For that reason, there are efforts to seek for alternative candidates of liquid metal coolants having excellent heat transfer property and to adopt improved safety features to the SFR concepts. This study considers gallium as alternative liquid metal coolant applicable to safety features in terms of chemical activity issue of the sodium and aims to experimentally investigate the natural convection capability of gallium as a feasibility study for the development of gallium-based passive safety features in SFRs. In this paper, the design and construction of the liquid gallium natural convection loop were carried out. The experimental results of heat transfer coefficient of liquid gallium resulting in heat removal {approx}2.53 kW were compared with existing correlations and they were much lower than the correlations. To comparison of the experimental data with computer code analysis, gallium property code was developed for employing MARS-LMR (Korea version of RELAP) based on liquid gallium as working fluid. (authors)

  10. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; Hartman, Alan; Tupta, Mary Ann; Baczewski, Andrew David; Crimp, Martin A.; Halpern, Joshua B.; He, Maoqi; Shaw, Harry C.

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  11. Selenium Speciation and Management in Wet FGD Systems

    SciTech Connect (OSTI)

    Searcy, K; Richardson, M; Blythe, G; Wallschlaeger, D; Chu, P; Dene, C

    2012-02-29

    This report discusses results from bench- and pilot-scale simulation tests conducted to determine the factors that impact selenium speciation and phase partitioning in wet FGD systems. The selenium chemistry in wet FGD systems is highly complex and not completely understood, thus extrapolation and scale-up of these results may be uncertain. Control of operating parameters and application of scrubber additives have successfully demonstrated the avoidance or decrease of selenite oxidation at the bench and pilot scale. Ongoing efforts to improve sample handling methods for selenium speciation measurements are also discussed. Bench-scale scrubber tests explored the impacts of oxidation air rate, trace metals, scrubber additives, and natural limestone on selenium speciation in synthetic and field-generated full-scale FGD liquors. The presence and concentration of redox-active chemical species as well as the oxidation air rate contribute to the oxidation-reduction potential (ORP) conditions in FGD scrubbers. Selenite oxidation to the undesirable selenate form increases with increasing ORP conditions, and decreases with decreasing ORP conditions. Solid-phase manganese [Mn(IV)] appeared to be the significant metal impacting the oxidation of selenite to selenate. Scrubber additives were tested for their ability to inhibit selenite oxidation. Although dibasic acid and other scrubber additives showed promise in early clear liquor (sodium based and without calcium solids) bench-scale tests, these additives did not show strong inhibition of selenite oxidation in tests with higher manganese concentrations and with slurries from full-scale wet FGD systems. In bench-tests with field liquors, addition of ferric chloride at a 250:1 iron-to-selenium mass ratio sorbed all incoming selenite to the solid phase, although addition of ferric salts had no impact on native selenate that already existed in the field slurry liquor sample. As ORP increases, selenite may oxidize to selenate more

  12. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L.; Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-03-24

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  13. HIGH-QUALITY, LOW-COST BULK GALLIUM NITRIDE SUBSTRATES GROWN...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Efficient manufacturing of gallium nitride (GaN) could reduce the cost of and improve the output for light-emitting diodes, solid-state lighting, laser displays, and other power ...

  14. NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01

    Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

  15. Temperature dependence of carrier capture by defects in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Modine, Normand A.

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  16. Method for enhancing the solubility of boron and indium in silicon

    DOE Patents [OSTI]

    Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2002-01-01

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  17. Exploration of Novel Reaction Pathway for Formation of Copper Indium Gallium Diselenide: Cooperative Research and Development Final Report, CRADA Number CRD-03-121

    SciTech Connect (OSTI)

    van Hest, M.

    2014-11-01

    The investigation will explore a potentially low-cost method of forming CIGS for use in solar cells. Investigators from HelioVolt will work in NREL laboratories to modify and apply our tools in fabrication of the CIGS layer. Investigators from NREL will assist in preparing substrates and in compleing solar cells composed of these CIGS layers to evaluate the effectiveness of the HelioVolt processes.

  18. Spin-phonon coupling in scandium doped gallium ferrite

    SciTech Connect (OSTI)

    Chakraborty, Keka R. E-mail: smyusuf@barc.gov.in; Mukadam, M. D.; Basu, S.; Yusuf, S. M. E-mail: smyusuf@barc.gov.in; Paul, Barnita; Roy, Anushree; Grover, Vinita; Tyagi, A. K.

    2015-03-28

    We embarked on a study of Scandium (Sc) doped (onto Ga site) gallium ferrite (GaFeO{sub 3}) and found remarkable magnetic properties. In both doped as well as parent compounds, there were three types of Fe{sup 3+} ions (depending on the symmetry) with the structure conforming to space group Pna2{sub 1} (Sp. Grp. No. 33) below room temperature down to 5?K. We also found that all Fe{sup 3+} ions occupy octahedral sites, and carry high spin moment. For the higher Sc substituted sample (Ga{sub 1?x}Sc{sub x}FeO{sub 3}: x?=?0.3), a canted magnetic ordered state is found. Spin-phonon coupling below Nel temperature was observed in doped compounds. Our results indicated that Sc doping in octahedral site modifies spin-phonon interactions of the parent compound. The spin-phonon coupling strength was estimated for the first time in these Sc substituted compounds.

  19. Optical properties and plasmonic response of silver-gallium nanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lereu, Aude; Lemarchand, F.; Zerrad, M.; Yazdanpanah, M.; Passian, Ali

    2015-02-12

    Silver and gallium form an alloy Ag2Ga via a room temperature spontaneous self-assembly that exhibits remarkable mechanical and electrical properties [1] suitable for nanoscale measurements [2]. However, whether photon excitation of plasmons in this emerging nanomaterial is retained or not has not been established. Here, we present a thin lm formation of Ag2Ga via a spreading- reactive process of liquid Ga on an Ag lm and a characterization of its dielectric function (E) = 1(E) - i 2(E) in the photon energy range 1.42 eV E <4.2 eV. It is observed that while the plasmon damping increases, near an energymore » of 3.4 eV, the real part of exhibits a crossing with respect to that of Ag. Furthermore, the impact of new plasmon supporting materials [3] is discussed and in order to enable further applications in plasmonics, the possibility of photon excitation of surface plasmons in Ag2Ga is studied.« less

  20. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    SciTech Connect (OSTI)

    Muoz-Tabares, J.A.; Reyes-Gasga, J.

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ? 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: We show a new type of artifact induced during preparation of TEM samples by FIB. Deposition of Ga occurs due to its high affinity for oxygen. Materials with small grain size (? 5 nm) could promote Ga deposition. Small grain size permits the elastic accommodation of deposited Ga.

  1. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect (OSTI)

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adiguezel, Denis; Stutzmann, Martin; Sharp, Ian D.; Thalhammer, Stefan

    2012-07-27

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth

  2. Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)

    SciTech Connect (OSTI)

    Morris, R.N.

    1998-08-01

    This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

  3. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, Carleton H.; Evans, Jr., Joseph Tate

    1998-01-01

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  4. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  5. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    SciTech Connect (OSTI)

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). These ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.

  6. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). Thesemore » ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.« less

  7. Macro- and microscopic properties of strontium doped indium oxide

    SciTech Connect (OSTI)

    Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

    2014-07-28

    Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In{sub 2}O{sub 3}:(SrO){sub x} were investigated for materials with different doping levels at different temperatures (T?=?20300?C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x?=?10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn{sub 2}O{sub 4}. An unusual property of high level (x?=?10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100200?C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3??10{sup ?13}?cm{sup 2}/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

  8. Riley oxidation: A forgotten name reaction for synthesis of selenium nanoparticles

    SciTech Connect (OSTI)

    Shah, Chetan P.; Dwivedi, Charu; Singh, Krishan K.; Kumar, Manmohan; Bajaj, Parma N.

    2010-09-15

    A simple wet chemical method, involving reaction of acetone with selenium dioxide, has been developed, to synthesize polyvinyl alcohol-stabilized selenium nanoparticles. The method is capable of producing nanoparticles in the size range of about 100-300 nm, under ambient conditions. The synthesized nanoparticles can be separated easily from the aqueous sols by a high-speed centrifuge, and can be re-dispersed in aqueous medium by a sonicator. The effect of concentrations of selenium dioxide, acetone and PVA on the size of the selenium nanoparticles has been studied. The size of the selenium nanoparticles has been found to increase with increase in the reaction time as well as the concentration of selenium dioxide, while it decreases with increase in the concentration of the stabilizer, PVA. The synthesized selenium nanoparticles have been characterized by UV-visible optical absorption spectroscopy, X-ray diffraction, energy dispersive X-ray analysis, differential scanning calorimetry, atomic force microscopy, scanning electron microscopy and transmission electron microscopy techniques.

  9. Hydrological and geochemical investigations of selenium behavior at Kesterson Reservoir

    SciTech Connect (OSTI)

    Zawislanski, P.T.; Tokunaga, T.K.; Benson, S.M.

    1995-05-01

    This report describes research relevant to selenium specification, fractionation, physical redistribution, reduction and oxidation, and spatial distribution as related to Kesterson Reservoir. The work was carried out by scientists and engineers from the Earth Sciences Division of the Lawrence Berkeley Laboratory over a two year period from October 1992 to September 1994. Much of the focus of these efforts was on the effects of two above-average rainfall years (1991/1992 and 1992/1993). These events marked a departure from the previous six years of drought conditions, under which oxidation of Se in the soil profile led to a marked increase in soluble Se. Evidence from the last two years show that much of the re-oxidized Se was once more reduced due to increased soil moisture content. Also, in areas of high hydraulic conductivity, major vertical displacement of selenium and other solutes due to rainfall infiltration was observed. Such observations underscore the dependence of the future of Se speciation and distribution on environmental conditions.

  10. AC electrokinetic manipulation of selenium nanoparticles for potential nanosensor applications

    SciTech Connect (OSTI)

    Mahmoodi, Seyed Reza; Bayati, Marzieh; Hosseinirad, Somayeh; Foroumadi, Alireza; Gilani, Kambiz; Rezayat, Seyed Mahdi

    2013-03-15

    Highlights: ? Se nanoparticles were synthesized using a reverse-microemulsion process. ? AC osmotic fluid flow repulses the particles from electrode edges. ? Dielectrophoretic force attracts the particles to electrode edges. ? Dielectrophoresis electrode showed non-ohmic behavior. ? The device can potentially be used as a nanosensor. - Abstract: We report the AC electrokinetic behavior of selenium (Se) nanoparticles for electrical characterization and possible application as micro/nano devices. selenium Se nanoparticles were successfully synthesized using a reverse-microemulsion process and investigated structurally using X-ray diffraction and transmission electron microscope. Interdigitated castellated ITO and non-castellated platinum electrodes were employed for manipulation of suspended materials in the fluid. Using ITO electrodes at low frequency limits resulted in deposition of Se particles on electrode surface. When Se particles exposed to platinum electrodes in the 10 Hz1 kHz range and V {sub p?p}> 8, AC osmotic fluid flow repulses the particles from electrode edges. However, in 10 kHz10 MHz range and V {sub p?p}> 5, dielectrophoretic force attracts the particles to electrode edges. As the Se particle concentration increased, the trapped Se particles were aligned along the electric field line and bridged the electrode gap. The device was characterized and can potentially be useful in making micro/nano electronic devices.

  11. Modeling the behavior of selenium in Pulverized-Coal Combustion systems

    SciTech Connect (OSTI)

    Senior, Constance; Otten, Brydger Van; Wendt, Jost O.L.; Sarofim, Adel

    2010-11-15

    The behavior of Se during coal combustion is different from other trace metals because of the high degree of vaporization and high vapor pressures of the oxide (SeO{sub 2}) in coal flue gas. In a coal-fired boiler, these gaseous oxides are absorbed on the fly ash surface in the convective section by a chemical reaction. The composition of the fly ash (and of the parent coal) as well as the time-temperature history in the boiler therefore influences the formation of selenium compounds on the surface of the fly ash. A model was created for interactions between selenium and fly ash post-combustion. The reaction mechanism assumed that iron reacts with selenium at temperatures above 1200 C and that calcium reacts with selenium at temperatures less than 800 C. The model also included competing reactions of SO{sub 2} with calcium and iron in the ash. Predicted selenium distributions in fly ash (concentration versus particle size) were compared against measurements from pilot-scale experiments for combustion of six coals, four bituminous and two low-rank coals. The model predicted the selenium distribution in the fly ash from the pilot-scale experiments reasonably well for six coals of different compositions. (author)

  12. Determination of microgram amounts of selenium and tellurium in copper-base alloys by atomic absorption spectrometry

    SciTech Connect (OSTI)

    Bedrossian, M.

    1984-02-01

    Trace amounts of selenium and tellurium in copper-base alloys are determined by atomic absorption spectroscopy. The alloys are dissolved in nitric acid to yield selenious and tellurous acids which are readily reduced to elemental form. Iodide complexes of both selenium and tellurium are extracted simultaneously using a solution of trioctylphosphine oxide and methyl isobutyl ketone. Selenium and tellurium are determined by flame atomic absorption with a sensitivity of 0.0002%. 6 references, 2 tables.

  13. The Pond 2 selenium volatilization study: A synthesis of five years of experimental results, 1990--1995

    SciTech Connect (OSTI)

    Zawislanski, P.T.; Jayaweera, G.R.; Biggar, J.W.; Wu, L.; Frankenberger, W.T.

    1996-02-01

    Microbial volatilization is a potential remedial measure to decrease the selenium inventory in Kesterson Reservoir soils. Past studies in both the field and the laboratory suggest that a significant percentage of the selenium inventory may be removed in this fashion. The objectives of this study include the quantification of selenium losses and a test of a pilot-scale design which in the future may be used in other parts of the Reservoir.

  14. Selenium utilization in thioredoxin and catalytic advantage provided by selenocysteine

    SciTech Connect (OSTI)

    Kim, Moon-Jung; Lee, Byung Cheon; Hwang, Kwang Yeon; Gladyshev, Vadim N.; Kim, Hwa-Young

    2015-06-12

    Thioredoxin (Trx) is a major thiol-disulfide reductase that plays a role in many biological processes, including DNA replication and redox signaling. Although selenocysteine (Sec)-containing Trxs have been identified in certain bacteria, their enzymatic properties have not been characterized. In this study, we expressed a selenoprotein Trx from Treponema denticola, an oral spirochete, in Escherichia coli and characterized this selenoenzyme and its natural cysteine (Cys) homologue using E. coli Trx1 as a positive control. {sup 75}Se metabolic labeling and mutation analyses showed that the SECIS (Sec insertion sequence) of T. denticola selenoprotein Trx is functional in the E. coli Sec insertion system with specific selenium incorporation into the Sec residue. The selenoprotein Trx exhibited approximately 10-fold higher catalytic activity than the Sec-to-Cys version and natural Cys homologue and E. coli Trx1, suggesting that Sec confers higher catalytic activity on this thiol-disulfide reductase. Kinetic analysis also showed that the selenoprotein Trx had a 30-fold higher K{sub m} than Cys-containing homologues, suggesting that this selenoenzyme is adapted to work efficiently with high concentrations of substrate. Collectively, the results of this study support the hypothesis that selenium utilization in oxidoreductase systems is primarily due to the catalytic advantage provided by the rare amino acid, Sec. - Highlights: • The first characterization of a selenoprotein Trx is presented. • The selenoenzyme Trx exhibits 10-fold higher catalytic activity than Cys homologues. • Se utilization in Trx is primarily due to the catalytic advantage provided by Sec residue.

  15. Sandia Demonstrated First-Time, Single-Mode Lasing in Gallium-Nitride

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanowire Lasers Demonstrated First-Time, Single-Mode Lasing in Gallium-Nitride Nanowire Lasers - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization

  16. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystalsionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  17. Band gap narrowing in zinc oxide-based semiconductor thin films...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  18. "Title","Creator/Author","Publication Date","OSTI Identifier...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  19. TITLE AUTHORS SUBJECT SUBJECT RELATED DESCRIPTION PUBLISHER AVAILABILI...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION ALUMINIUM COMPOUNDS BORON COMPOUNDS CHARGE CARRIERS CONCENTRATION RATIO DENSITY DOPED MATERIALS ELECTRONIC STRUCTURE ENERGY GAP GALLIUM COMPOUNDS INDIUM COMPOUNDS...

  20. Vapor phase tri-methyl-indium seeding system suitable for high temperature spectroscopy and thermometry

    SciTech Connect (OSTI)

    Whiddon, R.; Zhou, B.; Borggren, J.; Aldén, M.; Li, Z. S.

    2015-09-15

    Tri-methyl-indium (TMI) is used as an indium transport molecule to introduce indium atoms to reactive hot gas flows/combustion environments for spectroscopic diagnostics. A seeding system was constructed to allow the addition of an inert TMI laden carrier gas into an air/fuel mixture burning consequently on a burner. The amount of the seeded TMI in the carrier gas can be readily varied by controlling the vapor pressure through the temperature of the container. The seeding process was calibrated using the fluorescent emission intensity from the indium 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 1/2} and 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 3/2} transitions as a function of the calculated TMI seeding concentration over a range of 2–45 ppm. The response was found to be linear over the range 3–22.5 ppm; at concentrations above 25 ppm there is a loss of linearity attributable to self-absorption or loss of saturation of TMI vapor pressure in the carrier gas flow. When TMI was introduced into a post-combustion environment via an inert carrier gas, molecular transition from InH and InOH radicals were observed in the flame emission spectrum. Combined laser-induced fluorescence and absorption spectroscopy were applied to detect indium atoms in the TMI seeded flame and the measured atomic indium concentration was found to be at the ppm level. This method of seeding organometallic vapor like TMI to a reactive gas flow demonstrates the feasibility for quantitative spectroscopic investigations that may be applicable in various fields, e.g., chemical vapor deposition applications or temperature measurement in flames with two-line atomic fluorescence.

  1. Potential Moderating Effects of Selenium on Mercury Uptake and Selenium:Mercury Molar Ratios in Fish From Oak Ridge and Savannah River Site - 12086

    SciTech Connect (OSTI)

    Burger, Joanna; Gochfeld, Michael; Donio, Mark; Jeitner, Christian; Pittfield, Taryn

    2012-07-01

    Mercury contamination is an important remediation issue at the U.S. Department of Energy's (DOE) Oak Ridge Reservation and to a lesser extent at other DOE sites because of the hazard it presents, potential consequences to humans and eco-receptors, and completed pathways, to offsite receptors. Recent work has emphasized that selenium might ameliorate the toxicity of mercury, and we examine the selenium:mercury (Se:Hg) molar ratios in fish from Oak Ridge, and compare them to Se:Hg molar ratios in fish from the Savannah River. Selenium/mercury molar ratios varied considerably among and within fish species. There was considerable variation in the molar ratios for individual fish (as opposed to mean ratios by species) for freshwater fish from both sites. The inter-individual variation in molar ratios indicates that such that the molar ratios of mean Se and Hg concentrations may not be representative. Even for fish species with relatively low mercury levels, some individual fish have molar ratios less than unity, the value sometime thought to be protective. Selenium levels varied narrowly regardless of fish size, consistent with homeostatic regulation of this essential trace element. The data indicate that considerable attention will need to be directed toward variations and variances, as well as the mechanisms of the interaction of selenium and mercury, before risk assessment and risk management policies can use this information to manage mercury pollution and risk. Even so, if there are high levels of selenium in the fish from Poplar Creek on Oak Ridge, then the potential exists for some amelioration of adverse health effects, on the fish themselves, predators that eat them, and people who consume them. This work will aid DOE because it will allow managers and scientists to understand another aspect that affects fate and transport of mercury, as well as the potential effects of methylmercury in fish for human and ecological receptors. The variability within fish

  2. Optimization of ferric hydroxide coprecipitation process for selenium removal from petroleum refinery stripped four water

    SciTech Connect (OSTI)

    Gerhardt, M.B.; Marrs, D.R.; Roehl, R.

    1996-12-31

    Iron coprecipitation was used in bench-scale tests to remove selenium from stripped sour water generated by two petroleum refineries. Chlorine dioxide and hydrogen peroxide were found to convert selenocyanate in the stripped sour water to selenite, which can be removed by iron coprecipitation. An iodometric titration procedure was developed to determine the required oxidant dose. Iron coprecipitation reduced selenium concentrations by 40 to 99 percent in stripped sour water after chlorine dioxide pretreatment Removal was less effective with hydrogen peroxide as the oxidant: total selenium concentrations were reduced by 28 to 92 percent in stripped sour water after hydrogen peroxide pretreatment. Highest removals were obtained at the highest oxidant and iron doses. Sludges produced in coprecipitation tests were hazardous under California regulations. Ozone oxidized selenocyanate but prevented ferric hydroxide precipitation or coagulation. Air was ineffective at selenocyanate oxidation. Repeatedly contacting iron hydroxide with stripped sour water pretreated with hydrogen peroxide, in a simulation of a countercurrent adsorption process, increased the selenium adsorbed on the solids from 32 to 147 pg selenium per mg of iron, but some of the adsorbed selenite was oxidized to selenate and desorbed back into solution.

  3. Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

    SciTech Connect (OSTI)

    Ostafiychuk, B. K.; Yaremiy, I. P. Yaremiy, S. I.; Fedoriv, V. D.; Tomyn, U. O.; Umantsiv, M. M.; Fodchuk, I. M.; Kladko, V. P.

    2013-12-15

    The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.

  4. Spectral properties of a novel laser crystal Y3(In,Ga)2Ga3O12:Cr(3+)--translation

    SciTech Connect (OSTI)

    Li, Y.; Tang, H.; Hang, Y.; Chen, S.

    1991-11-19

    Spectral properties of a novel phonon terminated laser crystal Yttrium(3)(Indium, Gallium)(2)Gallium(3)Oxygen(12): Chromium(3+) grown by the flux method are reported for the first time. The results show that the spectral properties of this novel crystal are compatible with those of Gadolinium(3)(Selenium, Gallium)(3)Gallium(3)Oxygen(12): Chromium(3+) and is a potential ambient temperature tunable laser crystal. Gadolinium(3)(Scandium, Gallium)(2)Gallium(3)Oxygen(12): Chromium(3+) (shortened to GSGG:CR3+) is a type of phonon-terminated laser crystal with excellent capabilities. It has a relatively weak crystal field and relatively strong electron-phonon coupling. At room temperatures a strong terminal phonon emission spectrum with a half width of about 100 nm can be observed. At the same time, experimentally at room temperatures, a wide band continuous tunable laser emission has been observed. Since it has been reported, a great deal of attention has been paid to it. However, since Scandium is rare and expensive its applications are limited.

  5. GIS INTERNET MAP SERVICE FOR DISPLAYING SELENIUM CONTAMINATION DATA IN THE SOUTHEASTERN IDAHO PHOSPHATE MINING RESOURCE AREA

    SciTech Connect (OSTI)

    Roger Mayes; Sera White; Randy Lee

    2005-04-01

    Selenium is present in waste rock/overburden that is removed during phosphate mining in southeastern Idaho. Waste rock piles or rock used during reclamation can be a source of selenium (and other metals) to streams and vegetation. Some instances (in 1996) of selenium toxicity in grazing sheep and horses caused public health and environmental concerns, leading to Idaho Department of Environmental Quality (DEQ) involvement. The Selenium Information System Project is a collaboration among the DEQ, the United States Forest Service (USFS), the Bureau of Land Management (BLM), the Idaho Mining Association (IMA), Idaho State University (ISU), and the Idaho National Laboratory (INL)2. The Selenium Information System is a centralized data repository for southeastern Idaho selenium data. The data repository combines information that was previously in numerous agency, mining company, and consultants’ databases and web sites. These data include selenium concentrations in soil, water, sediment, vegetation and other environmental media, as well as comprehensive mine information. The Idaho DEQ spearheaded a selenium area-wide investigation through voluntary agreements with the mining companies and interagency participants. The Selenium Information System contains the results of that area-wide investigation, and many other background documents. As studies are conducted and remedial action decisions are made the resulting data and documentation will be stored within the information system. Potential users of the information system are agency officials, students, lawmakers, mining company personnel, teachers, researchers, and the general public. The system, available from a central website, consists of a database that contains the area-wide sampling information and an ESRI ArcIMS map server. The user can easily acquire information pertaining to the area-wide study as well as the final area-wide report. Future work on this project includes creating custom tools to increase the

  6. Dynamics of formation of photoresponse in a detector structure made of gallium arsenide

    SciTech Connect (OSTI)

    Ayzenshtat, G. I., E-mail: ayzen@mail.tomsknet.ru; Lelekov, M. A.; Tolbanov, O. P. [Tomsk State University (Russian Federation)

    2008-04-15

    The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region was performed under illumination with an infrared light-emitting diode with a wavelength of 0.9 {mu}m. In this case, the situation emerging in the device structure under the effect of X-ray radiation or a high-energy electron beam was simulated. It is shown that the variation in the shape of the output signal with time in this case is caused by variation in the electric field profile due to the capture of holes at deep centers in gallium arsenide. An absolutely different distribution of the electric field emerges in the structure under irradiation of a semitransparent cathode of the structure with a red light-emitting diode, emission of which penetrates into the active region for mere 1 {mu}m. In this case, the transformation of the electric field is caused by the capture of electrons. Under the prolonged effect of such radiation, a space-charge-limited current mode emerges in the device.

  7. Selenium in Oklahoma ground water and soil. Quarterly report No. 6

    SciTech Connect (OSTI)

    Atalay, A.; Vir Maggon, D.

    1991-03-30

    Selenium with a consumption of 2 liters per day (5). The objectives of this study are: (1) to determine the concentrations of Se in Oklahoma ground water and soil samples. (2) to map the geographical distribution of Se species in Oklahoma. (3) to relate groundwater depth, pH and geology with concentration of Se.

  8. Speciation and Attenuation of Arsenic and Selenium at Coal Combustion By-Product Management Facilities

    SciTech Connect (OSTI)

    K. Ladwig

    2005-12-31

    The overall objective of this project was to evaluate the impact of key constituents captured from power plant air streams (principally arsenic and selenium) on the disposal and utilization of coal combustion products (CCPs). Specific objectives of the project were: (1) to develop a comprehensive database of field leachate concentrations at a wide range of CCP management sites, including speciation of arsenic and selenium, and low-detection limit analyses for mercury; (2) to perform detailed evaluations of the release and attenuation of arsenic species at three CCP sites; and (3) to perform detailed evaluations of the release and attenuation of selenium species at three CCP sites. Each of these objectives was accomplished using a combination of field sampling and laboratory analysis and experimentation. All of the methods used and results obtained are contained in this report. For ease of use, the report is subdivided into three parts. Volume 1 contains methods and results for the field leachate characterization. Volume 2 contains methods and results for arsenic adsorption. Volume 3 contains methods and results for selenium adsorption.

  9. Recovery of indium from used LCD panel by a time efficient and environmentally sound method assisted HEBM

    SciTech Connect (OSTI)

    Lee, Cheol-Hee; Jeong, Mi-Kyung; Fatih Kilicaslan, M.; Lee, Jong-Hyeon; Hong, Hyun-Seon; Hong, Soon-Jik

    2013-03-15

    Highlights: ► In this study, we recovered indium from a waste LCD panel. ► The ITO glass was milled to obtain micron size particles in a HEBM machine. ► Effect of particle size of ITO glass on the amount of dissolved In was investigated. ► In a very short time, a considerable amount of In was recovered. ► Amount of HCl in acid solution was decreased to 40 vol.%. - Abstract: In this study, a method which is environmentally sound, time and energy efficient has been used for recovery of indium from used liquid crystal display (LCD) panels. In this method, indium tin oxide (ITO) glass was crushed to micron size particles in seconds via high energy ball milling (HEBM). The parameters affecting the amount of dissolved indium such as milling time, particle size, effect time of acid solution, amount of HCl in the acid solution were tried to be optimized. The results show that by crushing ITO glass to micron size particles by HEBM, it is possible to extract higher amount of indium at room temperature than that by conventional methods using only conventional shredding machines. In this study, 86% of indium which exists in raw materials was recovered about in a very short time.

  10. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    SciTech Connect (OSTI)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

  11. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  12. Temperature sensibility of the birefringence properties in side-hole photonic crystal fiber filled with Indium

    SciTech Connect (OSTI)

    Reyes-Vera, Erick Gmez-Cardona, Nelson D.; Chesini, Giancarlo; Cordeiro, Cristiano M. B.; Torres, Pedro

    2014-11-17

    We report on the temperature sensitivity of the birefringence properties of a special kind of photonic crystal fiber containing two side holes filled with Indium metal. The modulation of the fiber birefringence is accomplished through the stress field induced by the expansion of the metal. Although the fiber was made at low gas pressures during the indium infiltration process, the birefringence showed anomalous property at a relatively low temperature value, which is completely different from those reported in conventional-like fibers with two holes filled with metal. By modeling the anisotropic changes induced by the metal expansion to the refractive index within the fiber, we are able to reproduce the experimental results. Our results have practical relevance for the design of devices based on this technology.

  13. Synthesis and Raman spectrum of crystalline indium oxide micro-rods with rectangular cross-section

    SciTech Connect (OSTI)

    Yadav, Kavita Mehta, B. R. Singh, J. P.

    2014-04-24

    Indium oxide (IO) micro-rods with rectangular cross section were synthesized without catalyst in chemical vapor deposition (CVD) system by carbothermal reduction of indium oxide at 900 °C. The rectangular micro-rods (RMRs) were grown on Si substrate in presence of water vapors and Ar atmosphere. Water was used as oxidizing reagent which controls the In/O stoichiometry in RMRs. The IO RMRs have dimensions of about 20 μm in length and about 1 μm width. The growth process involved in formation of RMRs is vapor-solid (VS) mechanism. Raman analysis was performed to obtain the phonon modes of the RMRs and the peaks of Raman spectrum were indexed to the modes being associated with bcc−In{sub 2}O{sub 3}.

  14. Novel solar light driven photocatalyst, zinc indium vanadate for photodegradation of aqueous phenol

    SciTech Connect (OSTI)

    Mahapure, Sonali A.; Ambekar, Jalindar D.; Nikam, Latesh K.; Marimuthu, R.; Kulkarni, Milind V.

    2011-05-15

    Graphical abstract: Novel photocatalyst, zinc indium vanadate (ZnIn{sub 2}V{sub 2}O{sub 9}) demonstrated and showed an excellent photocatalytic activity for phenol degradation under visible light. Research highlights: {yields} Designing and identification of a photocatalyst having prospective potential application to be used in visible light (400-800 nm). {yields} Successful synthesis of novel ZnIn{sub 2}V{sub 2}O{sub 9} by solid state route. {yields} Confirmation of the designed product using characterization techniques. {yields} Application study comprising photodegradation of aqueous phenol at visible light despite of UV radiations. -- Abstract: In the present investigation, we have demonstrated the synthesis of novel photocatalyst, zinc indium vanadate (ZIV) by solid-solid state route using respective oxides of zinc, indium and vanadium. This novel photocatalyst was characterized using XRD, FESEM, UV-DRS and FTIR in order to investigate its structural, morphological and optical properties. XRD clearly shows the formation of phase pure ZIV of triclinic crystal structure with good crystallinity. FESEM micrographs showed the clustered morphology having particle size between 0.5 and 1 {mu}m. Since, optical study showed the band gap around 2.8 eV, i.e. in visible region, we have performed the photocatalytic activity of phenol degradation under visible light irradiation. The photodecomposition of phenol by ZIV is studied for the first time and an excellent photocatalytic activity was obtained using this novel photocatalyst. Considering the band gap of zinc indium vanadate in visible region, it will also be the potential candidate for water splitting.

  15. Indium diffusion through high-k dielectrics in high-k/InP stacks

    SciTech Connect (OSTI)

    Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Galatage, R. V.; Zhernokletov, D.; Wallace, R. M.; Department of Physics, University of Texas at Dallas, Richardson, Texas 75080

    2013-08-05

    Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

  16. Short-range order and dynamics of atoms in liquid gallium

    SciTech Connect (OSTI)

    Mokshin, A. V. Khusnutdinoff, R. M.; Novikov, A. G.; Blagoveshchenskii, N. M.; Puchkov, A. V.

    2015-11-15

    The features of the microscopic structure, as well as one-particle and collective dynamics of liquid gallium in the temperature range from T = 313 to 1273 K, are studied on the p = 1.0 atm isobar. Detailed analysis of the data on diffraction of neutrons and X-rays, as well as the results of atomic dynamics simulation, lead to some conclusions about the structure. In particular, for preset conditions, gallium is in the equilibrium liquid phase showing no features of any stable local crystalline clusters. The pronounced asymmetry of the principle peak of the static structure factor and the characteristic “shoulder” in its right-hand part appearing at temperatures close to the melting point, which are clearly observed in the diffraction data, are due to the fact that the arrangement of the nearest neighbors of an arbitrary atom in the system is estimated statistically from the range of correlation length values and not by a single value as in the case of simple liquids. Compactly located dimers with a very short bond make a significant contribution to the statistics of nearest neighbors. The temperature dependence of the self-diffusion coefficient calculated from atomic dynamics simulation agrees well with the results obtained from experimental spectra of the incoherent scattering function. Interpolation of the temperature dependence of the self-diffusion coefficient on a logarithmic scale reveals two linear regions with a transition temperature of about 600 K. The spectra of the dynamic structure factor and spectral densities of the local current calculated by simulating the atomic dynamics indicate the existence of acoustic vibrations with longitudinal and transverse polarizations in liquid gallium, which is confirmed by experimental data on inelastic scattering of neutrons and X-rays. It is found that the vibrational density of states is completely reproduced by the generalized Debye model, which makes it possible to decompose the total vibrational motion into

  17. Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

    SciTech Connect (OSTI)

    Zeng, Y.; Roland, I.; Checoury, X.; Han, Z.; El Kurdi, M.; Sauvage, S.; Boucaud, P.; Gayral, B.; Brimont, C.; Guillet, T.; Mexis, M.; Semond, F.

    2015-02-23

    We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarization generated by the second-order nonlinear susceptibilities χ{sub zxx}{sup (2)}, χ{sub zyy}{sup (2)} and the electric fields of the fundamental cavity mode.

  18. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    SciTech Connect (OSTI)

    Muhammad, R.; Ahamad, R.; Ibrahim, Z.; Othaman, Z.

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  19. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

    SciTech Connect (OSTI)

    Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A.

    1998-01-01

    A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

  20. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect (OSTI)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  1. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

    SciTech Connect (OSTI)

    Imtiaz, Atif; Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel; Weber, Joel C.; Coakley, Kevin J.

    2014-06-30

    We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ?}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ?}? effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ?} images.

  2. Growing the Tool Box for Medical Imaging: The Selenium-72/Arsenic-72

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Generator | U.S. DOE Office of Science (SC) Growing the Tool Box for Medical Imaging: The Selenium-72/Arsenic-72 Generator Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Funding Opportunities Nuclear Science Advisory Committee (NSAC) Community Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: Email Us More Information

  3. Selenium And Arsenic Speciation in Fly Ash From Full-Scale Coal-Burning Utility Plants

    SciTech Connect (OSTI)

    Huggins, F.E.; Senior, C.L.; Chu, P.; Ladwig, K.; Huffman, G.P.; /Kentucky U. /Reaction Engin. Int. /Elect. Power Res. Inst., Palo Alto

    2007-07-09

    X-ray absorption fine structure spectroscopy has been used to determine directly the oxidation states and speciation of selenium and arsenic in 10 fly ash samples collected from full-scale utility plants. Such information is needed to assess the health risk posed by these elements in fly ash and to understand their behavior during combustion and in fly ash disposal options, such as sequestration in tailings ponds. Selenium is found predominantly as Se(IV) in selenite (SeO{sub 3}{sup 2-}) species, whereas arsenic is found predominantly as As(V) in arsenate (AsO{sub 4}{sup 3-}) species. Two distinct types of selenite and arsenate spectra were observed depending upon whether the fly ash was derived from eastern U.S. bituminous (Fe-rich) coals or from western subbituminous or lignite (Ca-rich) coals. Similar spectral details were observed for both arsenic and selenium in the two different types of fly ash, suggesting that the post-combustion behavior and capture of both of these elements are likely controlled by the same dominant element or phase in each type of fly ash.

  4. Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

    SciTech Connect (OSTI)

    Yang, Chan-Shan; Tang, Tsung-Ta; Pan, Ru-Pin; Yu, Peichen; Pan, Ci-Ling

    2014-04-07

    Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding ?/2 at 1.0 THz was achieved in a ?517??m-thick cell. The phase shifter exhibits high transmittance (?78%). The driving voltage required for quarter-wave operation is as low as 5.66?V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

  5. Using indium tin oxide material to implement the imaging of microwave plasma ignition process

    SciTech Connect (OSTI)

    Wang, Qiang; Hou, Lingyun; Zhang, Guixin Zhang, Boya; Liu, Cheng; Wang, Zhi; Huang, Jian

    2014-02-17

    In this paper, a method is introduced to get global observation of microwave plasma ignition process at high pressure. A microwave resonator was designed with an indium tin oxide coated glass at bottom. Microwave plasma ignition was implemented in methane and air mixture at 10 bars by a 2?ms-3?kW-2.45?GHz microwave pulse, and the high speed images of the ignition process were obtained. The images visually proved that microwave plasma ignition could lead to a multi-point ignition. The system may also be applied to obtain Schlieren images, which is commonly used to observe the development of flame kernel in an ignition process.

  6. Alternating layers of plutonium and lead or indium as surrogate for plutonium

    SciTech Connect (OSTI)

    Rudin, Sven Peter

    2009-01-01

    Elemental plutonium (Pu) assumes more crystal structures than other elements, plausibly due to bonding f electrons becoming non-bonding. Complex geometries hamper understanding of the transition in Pu, but calculations predict this transition in a system with simpler geometry: alternating layers either of plutonium and lead or of plutonium and indium. Here the transition occurs via a pairing-up of atoms within Pu layers. Calculations stepping through this pairing-up reveal valuable details of the transition, for example that the transition from bonding to non-bonding proceeds smoothly.

  7. Real-time x-ray studies of indium island growth kinetics

    SciTech Connect (OSTI)

    Demasi, Alexander; Rainville, Meliha G.; Ludwig, Karl F.

    2015-03-15

    The authors have investigated the early stages of indium island formation and growth by vapor phase deposition on room temperature sapphire using real-time grazing incidence small angle x-ray scattering (GISAXS), followed by ex-situ atomic force microscopy and scanning electron microscopy. The results are consistent with the formation and coalescence of hemispherical islands, as described by Family and Meakin. Monte Carlo simulations of systems of coalescing islands were used to supplement and quantify the results of GISAXS, and a good agreement is seen between the data and the simulations.

  8. Waste reduction options for manufacturers of copper indium diselenide photovoltaic cells

    SciTech Connect (OSTI)

    DePhillips, M.P.; Fthenakis, V.M.; Moskowitz, P.D.

    1994-03-01

    This paper identifies general waste reduction concepts and specific waste reduction options to be used in the production of copper indium diselenide (CIS) photovoltaic cells. A general discussion of manufacturing processes used for the production of photovoltaic cells is followed by a description of the US Environmental Protection Agency (EPA) guidelines for waste reduction (i.e., waste minimization through pollution prevention). A more specific discussion of manufacturing CIS cells is accompanied by detailed suggestions regarding waste minimization options for both inputs and outputs for ten stages of this process. Waste reduction from inputs focuses on source reduction and process changes, and reduction from outputs focuses on material reuse and recycling.

  9. Highly efficient inverted organic solar cells using amino acid modified indium tin oxide as cathode

    SciTech Connect (OSTI)

    Li, Aiyuan; Nie, Riming; Deng, Xianyu; Wei, Huaixin; Li, Yanqing; Tang, Jianxin; Zheng, Shizhao; Wong, King-Young

    2014-03-24

    In this paper, we report that highly efficient inverted organic solar cells were achieved by modifying the surface of indium tin oxide (ITO) using an amino acid, Serine (Ser). With the modification of the ITO surface, device efficiency was significantly enhanced from 0.63% to 4.17%, accompanied with an open circuit voltage (Voc) that was enhanced from 0.30?V to 0.55?V. Ultraviolet and X-ray photoelectron spectroscopy studies indicate that the work function reduction induced by the amino acid modification resulting in the decreased barrier height at the ITO/organic interface played a crucial role in the enhanced performances.

  10. EA-1686: Department of Energy Loan Guarantee to SoloPower Inc. for the Electrodeposition-based Copper indium gallium selenide (CIGS) Solar Technology Manufacturing Facility near San Jose, California

    Broader source: Energy.gov [DOE]

    EA cancelled due to a change in project scope; DOE prepared a categorical exclusion determination (8/15/11).

  11. Effect of indium and antimony doping in SnS single crystals

    SciTech Connect (OSTI)

    Chaki, Sunil H. Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  12. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  13. Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Basile Carrasco, Leonardo A.; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A.; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M.; Geohegan, David B.; et al

    2015-01-21

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0° or 60° interlayer rotations. The commensurate stacking configurations (AA' and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale andmore » the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. Here, the combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.« less

  14. Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals

    SciTech Connect (OSTI)

    Li, Xufan; Basile Carrasco, Leonardo A.; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A.; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

    2015-01-21

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0° or 60° interlayer rotations. The commensurate stacking configurations (AA' and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. Here, the combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

  15. Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals

    SciTech Connect (OSTI)

    Li, Xufan; Basile Carrasco, Leonardo A; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2015-01-01

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0 or 60 interlayer rotations. The commensurate stacking configurations (AA and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. The combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

  16. Flexible indium zinc oxide/Ag/indium zinc oxide multilayer electrode grown on polyethersulfone substrate by cost-efficient roll-to-roll sputtering for flexible organic photovoltaics

    SciTech Connect (OSTI)

    Park, Yong-Seok; Kim, Han-Ki

    2010-01-15

    The authors describe the preparation and characteristics of flexible indium zinc oxide (IZO)-Ag-IZO multilayer electrodes grown on flexible polyethersulfone (PES) substrates using a roll-to-roll sputtering system for use in flexible organic photovoltaics. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO-Ag-IZO multilayer electrode with a sheet resistance of 6.15 {epsilon}/square, optical transmittance of 87.4%, and figure of merit value of 42.03x10{sup -3} {Omega}{sup -1} on the PES substrate. In addition, the IZO-Ag-IZO multilayer electrode exhibited superior flexibility to the roll-to-roll sputter grown single ITO electrode due to the existence of a ductile Ag layer between the IZO layers and stable amorphous structure of the IZO film. Furthermore, the flexible organic solar cells (OSCs) fabricated on the roll-to-roll sputter grown IZO-Ag-IZO electrode showed higher power efficiency (3.51%) than the OSCs fabricated on the roll-to-roll sputter grown single ITO electrode (2.67%).

  17. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect (OSTI)

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  18. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    SciTech Connect (OSTI)

    Zhang, Yan; Yu, Jianqiang; Sun, Kai; Zhu, Yukun; Bu, Yuyu; Chen, Zhuoyuan

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  19. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, Andr

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  20. Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics

    SciTech Connect (OSTI)

    Doggart, P.; Bristow, N.; Kettle, J.

    2014-09-14

    The influence of indium tin oxide [(In{sub 2}O{sub 3}:Sn), ITO] material properties on the output performance of organic photovoltaic (OPV) devices has been modelled and investigated. In particular, the effect of altering carrier concentration (n), thickness (t), and mobility (?{sub e}) in ITO films and their impact on the optical performance, parasitic resistances and overall efficiency in OPVs was studied. This enables optimal values of these parameters to be calculated for solar cells made with P3HT:PC{sub 61}BM and PCPDTBT:PC{sub 71}BM active layers. The optimal values of n, t and ?{sub e} are not constant between different OPV active layers and depend on the absorption spectrum of the underlying active layer material system. Consequently, design rules for these optimal values as a function of donor bandgap in bulk-heterojunction active layers have been formulated.

  1. Ferromagnetism of manganese-doped indium tin oxide films deposited on polyethylene naphthalate substrates

    SciTech Connect (OSTI)

    Nakamura, Toshihiro; Isozaki, Shinichi; Tanabe, Kohei; Tachibana, Kunihide

    2009-04-01

    Mn-doped indium tin oxide (ITO) films were deposited on polyethylene naphthalate (PEN) substrates using radio-frequency magnetron sputtering. The magnetic, electrical, and optical properties of the films deposited on PEN substrates were investigated by comparing with the properties of films grown on glass substrates at the same growth conditions. Thin films on PEN substrates exhibited low electrical resistivity of the order of 10{sup -4} {omega} cm and high optical transmittance between 75% and 90% in the visible region. Ferromagnetic hysteresis loops were observed at room temperature for the samples grown on PEN substrates. Mn-doped ITO films can be one of the most promising candidates of transparent ferromagnetic materials for flexible spintronic devices.

  2. Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

    SciTech Connect (OSTI)

    Jain, R.K.; Flood, D.J.

    1990-12-01

    Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greater than 16 percent AMO) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AMO efficiency at 25 C.

  3. Phosphonic Acid Functionalized Asymmetric Phthalocyanines: Synthesis, Modification of Indium Tin Oxide (ITO), and Charge Transfer

    SciTech Connect (OSTI)

    Polaske, Nathan W.; Lin, Hsiao-Chu; Tang, Anna; Mayukh, Mayank; Oquendo, Luis E.; Green, John; Ratcliff, Erin L.; Armstrong, Neal R.; Saavedra, S. Scott; McGrath, Dominic V.

    2011-12-20

    Metalated and free-base A?B-type asymmetric phthalocyanines (Pcs) bearing, in the asymmetric quadrant, a flexible alkyl linker of varying chain lengths terminating in a phosphonic acid (PA) group have been synthesized. Two parallel series of asymmetric Pc derivatives bearing aryloxy and arylthio substituents are reported, and their synthesis and characterization through NMR, combustion analysis, and MALDI-MS are described. We also demonstrate the modification of indium tin oxide (ITO) substrates using the PA functionalized asymmetric Pc derivatives and monitoring their electrochemistry. The PA functionalized asymmetric Pcs were anchored to the ITO surface through chemisorption and their electrochemical properties characterized using cyclic voltammetry to investigate the effects of PA structure on the thermodynamics and kinetics of charge transfer. Ionization energies of the modified ITO surfaces were measured using ultraviolet photoemission spectroscopy.

  4. Indium tin oxide nanowires as hyperbolic metamaterials for near-field radiative heat transfer

    SciTech Connect (OSTI)

    Chang, Jui-Yung; Basu, Soumyadipta Wang, Liping

    2015-02-07

    We investigate near-field radiative heat transfer between Indium Tin Oxide (ITO) nanowire arrays which behave as type 1 and 2 hyperbolic metamaterials. Using spatial dispersion dependent effective medium theory to model the dielectric function of the nanowires, the impact of filling fraction on the heat transfer is analyzed. Depending on the filling fraction, it is possible to achieve both types of hyperbolic modes. At 150?nm vacuum gap, the heat transfer between the nanowires with 0.5 filling fraction can be 11 times higher than that between two bulk ITOs. For vacuum gaps less than 150?nm the heat transfer increases as the filling fraction decreases. Results obtained from this study will facilitate applications of ITO nanowires as hyperbolic metamaterials for energy systems.

  5. Defect structure of indium tin oxide and its relationship to conductivity

    SciTech Connect (OSTI)

    Gonzalez, G. B.; Cohen, J. B.; Hwang, J.-H.; Mason, T. O.; Hodges, J. P.; Jorgensen, J. D.

    2000-05-09

    Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Although indium tin oxide (ITO) is the most frequently used commercial TCO, its defect structure is still uncertain. Previously, its defect chemistry has been inferred based on the conductivity of the material. To directly study the defect structure of ITO, the authors prepared powders under different processing environments and performed neutron powder diffraction. Structural information was obtained by performing Rietveld analysis. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the defect oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites, showing a strong preference for the b site. These structural results are correlated with the measured electrical properties of the same samples.

  6. ZnO:H indium-free transparent conductive electrodes for active-matrix display applications

    SciTech Connect (OSTI)

    Chen, Shuming Wang, Sisi

    2014-12-01

    Transparent conductive electrodes based on hydrogen (H)-doped zinc oxide (ZnO) have been proposed for active-matrix (AM) display applications. When fabricated with optimal H plasma power and optimal plasma treatment time, the resulting ZnO:H films exhibit low sheet resistance of 200 Ω/◻ and high average transmission of 85% at a film thickness of 150 nm. The demonstrated transparent conductive ZnO:H films can potentially replace indium-tin-oxide and serve as pixel electrodes for organic light-emitting diodes as well as source/drain electrodes for ZnO-based thin-film transistors. Use of the proposed ZnO:H electrodes means that two photomask stages can be removed from the fabrication process flow for ZnO-based AM backplanes.

  7. Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys

    SciTech Connect (OSTI)

    Sreenivasulu, G.; Piskulich, E.; Srinivasan, G.; Qu, P.; Qu, Hongwei; Petrov, V. M.; Fetisov, Y. K.; Nosov, A. P.

    2014-07-21

    Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

  8. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    SciTech Connect (OSTI)

    Fitzgerald, M.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  9. Indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs stacks during anneal at different ambient conditions

    SciTech Connect (OSTI)

    Krylov, Igor; Winter, Roy; Ritter, Dan; Eizenberg, Moshe

    2014-06-16

    Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al{sub 2}O{sub 3} layer following vacuum and O{sub 2} anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al{sub 2}O{sub 3}/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

  10. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

    SciTech Connect (OSTI)

    Kyle, Erin C. H. Kaun, Stephen W.; Young, Erin C.; Speck, James S.

    2015-06-01

    We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

  11. Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

    SciTech Connect (OSTI)

    Abdinov, A. Sh.; Babayeva, R. F.; Amirova, S. I.; Rzayev, R. M.

    2013-08-15

    In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

  12. Summer 2011 Intern Project- Jonathan Waltman | Center for Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High efficiency solar cells require multiple junctions optimized for different wavelengths, and indium gallium nitride (InGaN) has the potential to further improve the efficiency ...

  13. PTIP Ltd | Open Energy Information

    Open Energy Info (EERE)

    Africa Sector: Solar Product: Thin-film Copper-indium-gallium-sulphur-selenide solar cell technology spinout from the University of Johannesburg. References: PTIP Ltd1 This...

  14. PROJECT PROFILE: From Modules to Atoms: Increasing Reliability...

    Broader source: Energy.gov (indexed) [DOE]

    The project will study reliability-related defects in major photovoltaic (PV) technologies that include silicon (Si), cadmium telluride (CdTe), and copper indium gallium selenide ...

  15. PROJECT PROFILE: Manufacturing and Reliability Science for CIGS...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    This project aims to overcome the largest challenges to investor confidence and long product lifetime in copper indium gallium selenide (CIGS): meta-stability, potential-induced ...

  16. NREL: Photovoltaics Research - Standards Development

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Current standards lack specifics on how to precondition cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) modules so that when tested for reporting conditions, ...

  17. High Temperature Aqueous Chemistry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    transport and formation of ore deposits with strategic importance such as rare earth elements (REE), beryllium, cobalt, gallium, indium, and telluride deposits, etc., which ...

  18. Solibro AB | Open Energy Information

    Open Energy Info (EERE)

    Sweden Zip: 751 21 Sector: Solar Product: Develops thin film solar cells using copper indium gallium diselenide (CIGS). References: Solibro AB1 This article is a stub....

  19. HelioVolt Corporation | Open Energy Information

    Open Energy Info (EERE)

    search Name: HelioVolt Corporation Place: Austin, Texas Zip: TX 78744 Product: Copper indium gallium selenide (CIGS) thin-film PV module manufacturer based in Austin,...

  20. Selenium fractionation and cycling in the intertidal zone of the Carquinez Strait. Annual report, October 1, 1995--December 31,1996

    SciTech Connect (OSTI)

    Zawislanski, P.T.; McGrath, A.E.; Benson, S.M.

    1997-10-01

    Selenium geochemistry in tidal wetlands is a topic of continuing study at Lawrence Berkeley National Laboratory. The program of studies described in this report was initiated in the fall of 1994 in response to concerns about elevated Se concentrations in waters, sediments, and biota in the Carquinez Strait. Processes by which selenium is introduced and potentially released from the sediment system have been the focus of research in 1996.

  1. Understanding Drooping Light Emitting Diodes CEEM | U.S. DOE...

    Office of Science (SC) Website

    Understanding "droop" may result in cheaper, more efficient LEDs; LEDs are more energy ... indium in Indium Gallium Nitride (InGaN) green LEDs caused a decrease in light intensity. ...

  2. Profiling of selenium removal in hydrogen ambient zone-refined tellurium bar using RF-GDOES

    SciTech Connect (OSTI)

    Anil, G. . E-mail: anilpillai_99@yahoo.com; Reddy, M.R.P.; Prasad, D.S.; Ali, S.T.; Munirathnam, N.R.; Prakash, T.L.

    2007-01-15

    Ultrapure tellurium (Te) metal has become an important metal in the strategic sector for fabricating high performance infrared devices for thermal imaging and night vision cameras. Zone refining (ZR) is a proven technique for purification of Te. Selenium (Se), present as an impurity in Te, is not easily removed by ZR under normal conditions as the segregation coefficient (K) is around 0.44-0.50. Hence, ZR was performed in a hydrogen atmosphere, during which Se gets converted to hydrogen selenide at the molten moving zones and carried away into the sodium hydroxide scrubbers. In this study a radio-frequency glow discharge optical emission spectrometer (RF-GDOES) was used for determining the concentration of Se along the 56 cm Te zone-refined bar. It was observed that the initial concentration of 1100 ppb Se was decreased to 30 ppb after 2 cycles.

  3. Selenium Speciation in Biofilms from Granular Sludge Bed Reactors Used for Wastewater Treatment

    SciTech Connect (OSTI)

    van Hullenbusch, Eric; Farges, Francois; Lenz, Markus; Lens, Piet; Brown, Gordon E., Jr.; /Stanford U., Geo. Environ. Sci. /SLAC, SSRL

    2006-12-13

    Se K-edge XAFS spectra were collected for various model compounds of Se as well as for 3 biofilm samples from bioreactors used for Se-contaminated wastewater treatment. In the biofilm samples, Se is dominantly as Se(0) despite Se K-edge XANES spectroscopy cannot easily distinguish between elemental Se and Se(-I)-bearing selenides. EXAFS spectra indicate that Se is located within aperiodic domains, markedly different to these known in monoclinic red selenium. However, Se can well occur within nanodivided domains related to monoclinic red Se, as this form was optically observed at the rim of some sludges. Aqueous selenate is then efficiently bioreduced, under sulfate reducing and methanogenic conditions.

  4. Selenium Speciation in Biofilms from Granular Sludge Bed Reactors Used for Wastewater Treatment

    SciTech Connect (OSTI)

    Hullenbusch, Eric van; Farges, Francois; Lenz, Markus; Lens, Piet; Brown, Gordon E. Jr.

    2007-02-02

    Se K-edge XAFS spectra were collected for various model compounds of Se as well as for 3 biofilm samples from bioreactors used for Se-contaminated wastewater treatment. In the biofilm samples, Se is dominantly as Se(0) despite Se K-edge XANES spectroscopy cannot easily distinguish between elemental Se and Se(-I)-bearing selenides. EXAFS spectra indicate that Se is located within aperiodic domains, markedly different to these known in monoclinc red selenium. However, Se can well occur within nanodivided domains related to monoclinic red Se, as this form was optically observed at the rim of some sludges. Aqueous selenate is then efficiently bioreduced, under sulfate reducing and methanogenic conditions.

  5. High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

    SciTech Connect (OSTI)

    He, Z.; Liu, X. R.; Hong, S. M. E-mail: smhong@home.swjtu.edu.cn; Wang, Z. G.; Zhu, H. Y.; Peng, J. P.

    2014-07-07

    The high-pressure behavior of melt-quenched amorphous selenium (a-Se) has been investigated via ultrasonic measurements and Raman scattering at room temperature. The ultrasonic measurements were conducted on a-Se in a multi-anvil apparatus with two different sample assemblies at pressures of up to 4.5 and 4.8 GPa. We discovered that similar kinks occur in the slopes of the pressure dependence characteristics of the travel time and the sound velocity in both shear and longitudinal waves in the 2.0–2.5 GPa range. These kinks are independent of the sample assemblies, indicating an intrinsic transformation of the a-Se. Additionally, we deduced the pressure-volume relationship of a-Se from the sound velocity characteristics using the Birch–Murnaghan equation of state, and the results agreed well with those of previous reports. In situ high-pressure Raman scattering measurements of a-Se were conducted in a diamond anvil cell with an 830 nm excitation line up to a pressure of 4.3 GPa. We found that the characteristic band of a-Se at ∼250 cm{sup −1} experienced a smooth shift to a lower frequency with pressure, but a sharp slope change in the band intensity versus pressure occurred near 2.5 GPa. The results of X-ray diffraction and differential scanning calorimetry measurements indicate that the samples remain in their amorphous states after decompression. Thus, we proposed that the abnormal compression behavior of a-Se in the 2.0–2.5 GPa range can be attributed to pressure-induced local atomic reconfiguration, implying an amorphous-amorphous transition of the elementary selenium.

  6. Speciation of Selenium, Arsenic, and Zinc in Class C Fly Ash

    SciTech Connect (OSTI)

    Luo, Yun; Giammar, Daniel E.; Huhmann, Brittany L.; Catalano, Jeffrey G.

    2011-11-17

    A major environmental concern associated with coal fly ash is the mobilization of trace elements that may contaminate water. To better evaluate proper use of fly ash, determine appropriate disposal methods, and monitor postdisposal conditions, it is important to understand the speciation of trace elements in fly ash and their possible environmental impact. The speciation of selenium, arsenic, and zinc was determined in five representative Class C fly ash samples from combustion of sub-bituminous Powder River Basin coal using synchrotron-based X-ray absorption spectroscopy to provide an improved understanding of the mechanisms of trace element association with the fly ash. Selenium in all fly ash samples occurs predominantly as Se(IV), with the exception of one sample, in which there was a minor amount of Se(0). Se(0) is likely associated with the high content of unburned coal in the sample. Arsenic exists in the fly ash as a single phase most consistent with calcium pyroarsenate. In contrast, zinc occurs as two distinct species in the silicate glass matrix of the fly ash. This work demonstrates that residual carbon in fly ash may reduce potential Se mobility in the environment by retaining it as less soluble elemental Se instead of Se(IV). Further, this work suggests that As and Zn in Class C fly ash will display substantially different release and mobilization behaviors in aquatic environments. While As release will primarily depend upon the dissolution and hydrolysis of calcium pyroarsenate, Zn release will be controlled by the dissolution of alkaline aluminosilicate glass in the ash.

  7. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 Ωcm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nmmore » (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  8. Compact, Interactive Electric Vehicle Charger: Gallium-Nitride Switch Technology for Bi-directional Battery-to-Grid Charger Applications

    SciTech Connect (OSTI)

    2010-10-01

    ADEPT Project: HRL Laboratories is using gallium nitride (GaN) semiconductors to create battery chargers for electric vehicles (EVs) that are more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger is important because it would help improve the overall performance of the EV. GaN semiconductors process electricity faster than the silicon semiconductors used in most conventional EV battery chargers. These high-speed semiconductors can be paired with lighter-weight electrical circuit components, which helps decrease the overall weight of the EV battery charger. HRL Laboratories is combining the performance advantages of GaN semiconductors with an innovative, interactive battery-to-grid energy distribution design. This design would support 2-way power flow, enabling EV battery chargers to not only draw energy from the power grid, but also store and feed energy back into it.

  9. An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun

    SciTech Connect (OSTI)

    Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

    2009-05-04

    Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

  10. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    SciTech Connect (OSTI)

    Hendrickson, Joshua R. Leedy, Kevin; Cleary, Justin W.; Vangala, Shivashankar; Nader, Nima; Guo, Junpeng

    2015-11-09

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  11. Selenium Accumulation, Distribution, and Speciation in Spineless Prickly Pear Cactus: A Drought- and Salt-Tolerant, Selenium-Enriched Nutraceutical Fruit Crop for Biofortified Foods

    SciTech Connect (OSTI)

    Banuelos, Gary S.; Fakra, Sirine C.; Walse, Spencer S.; Marcus, Matthew A.; Yang, Soo In; Pickering, Ingrid J.; Pilon-Smits, Elizabeth A.H.; Freeman, John L.

    2011-07-01

    The organ-specific accumulation, spatial distribution, and chemical speciation of selenium (Se) were previously unknown for any species of cactus. We investigated Se in Opuntia ficus-indica using inductively coupled plasma mass spectrometry, microfocused x-ray fluorescence elemental and chemical mapping ({micro}XRF), Se K-edge x-ray absorption near-edge structure (XANES) spectroscopy, and liquid chromatography-mass spectrometry (LC-MS). {micro}XRF showed Se concentrated inside small conic, vestigial leaves (cladode tips), the cladode vasculature, and the seed embryos. Se K-edge XANES demonstrated that approximately 96% of total Se in cladode, fruit juice, fruit pulp, and seed is carbon-Se-carbon (C-Se-C). Micro and bulk XANES analysis showed that cladode tips contained both selenate and C-Se-C forms. Inductively coupled plasma mass spectrometry quantification of Se in high-performance liquid chromatography fractions followed by LC-MS structural identification showed selenocystathionine-to-selenomethionine (SeMet) ratios of 75:25, 71:29, and 32:68, respectively in cladode, fruit, and seed. Enzymatic digestions and subsequent analysis confirmed that Se was mainly present in a 'free' nonproteinaceous form inside cladode and fruit, while in the seed, Se was incorporated into proteins associated with lipids. {micro}XRF chemical mapping illuminated the specific location of Se reduction and assimilation from selenate accumulated in the cladode tips into the two LC-MS-identified C-Se-C forms before they were transported into the cladode mesophyll. We conclude that Opuntia is a secondary Se-accumulating plant whose fruit and cladode contain mostly free selenocystathionine and SeMet, while seeds contain mainly SeMet in protein. When eaten, the organic Se forms in Opuntia fruit, cladode, and seed may improve health, increase Se mineral nutrition, and help prevent multiple human cancers.

  12. JV Task 124 - Understanding Multi-Interactions of SO3, Mercury, Selenium, and Arsenic in Illinois Coal Flue Gas

    SciTech Connect (OSTI)

    Ye Zhuang; Christopher Martin; John Pavlish

    2009-03-31

    This project consisted of pilot-scale combustion testing with a representative Illinois basin coal to explore the multi-interactions of SO{sub 3}, mercury, selenium and arsenic. The parameters investigated for SO{sub 3} and mercury interactions included different flue gas conditions, i.e., temperature, moisture content, and particulate alkali content, both with and without activated carbon injection for mercury control. Measurements were also made to track the transformation of selenium and arsenic partitioning as a function of flue gas temperature through the system. The results from the mercury-SO{sub 3} testing support the concept that SO{sub 3} vapor is the predominant factor that impedes efficient mercury removal with activated carbon in an Illinois coal flue gas, while H{sub 2}SO{sub 4} aerosol has less impact on activated carbon injection performance. Injection of a suitably mobile and reactive additives such as sodium- or calcium-based sorbents was the most effective strategy tested to mitigate the effect of SO{sub 3}. Transformation measurements indicate a significant fraction of selenium was associated with the vapor phase at the electrostatic precipitator inlet temperature. Arsenic was primarily particulate-bound and should be captured effectively with existing particulate control technology.

  13. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    SciTech Connect (OSTI)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing; Roy, V. A. L.

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  14. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki; Noh, Yong-Jin; Na, Seok-In

    2014-09-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10{sup −5} Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10{sup −3} Ω{sup −1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

  15. Recommended method for indium-111 platelet survival studies. International Committee for Standardization in Hematology. Panel on Diagnostic Applications of Radionuclides

    SciTech Connect (OSTI)

    Not Available

    1988-04-01

    Radioactive indium (/sup 111/In) has been introduced as an alternative to /sup 51/Cr as a platelet label because of its shorter half-life, higher photon yield and greater affinity for platelets. Furthermore, platelet labelling with /sup 111/In is possible at lower platelet counts than with /sup 51/Cr. In healthy individuals, the kinetics of simultaneously injected /sup 111/In-labeled and /sup 51/Cr-labeled platelets are similar. The document describes the technical and analytic aspects of platelet survival determination with /sup 111/In-labeled platelets and is intended to supplement the previously published recommendations for platelet survival studies.

  16. Low Temperature, Self-nucleated Growth of Indium Tin Oxide Nanostructures by Pulsed Laser Deposition in Argon

    SciTech Connect (OSTI)

    Tan, S. S.; Lee, W. K.; Kee, Y. Y.; Wong, H. Y.; Tou, T. Y.

    2011-03-30

    Indium tin oxide (ITO) nanostructures were successfully deposited on glass substrate by pulsed laser ablation in argon gas at 250 deg. C. Microstructural changes were observed in the argon gas pressure between 30 to 50 mTorr. The as-grown, nanostructured ITO exhibit In{sub 2}O{sub 3} bixbyite structure orientated at <111> direction. At the initial stage of growth, there was a large number of nucleation sites detected which eventually evolved into needle-like branches. The presence of spheres at the tip of these branches indicates that these nanostructured ITO were likely governed by vapor-liquid-solid (VLS) growth mechanism.

  17. Modeling of photocurrent and lag signals in amorphous selenium x-ray detectors

    SciTech Connect (OSTI)

    Siddiquee, Sinchita; Kabir, M. Z.

    2015-07-15

    A mathematical model for transient photocurrent and lag signal in x-ray imaging detectors has been developed by considering charge carrier trapping and detrapping in the energy distributed defect states under exponentially distributed carrier generation across the photoconductor. The model for the transient and steady-state carrier distributions and hence the photocurrent has been developed by solving the carrier continuity equation for both holes and electrons. The residual (commonly known as lag signal) current is modeled by solving the trapping rate equations considering the thermal release and trap filling effects. The model is applied to amorphous selenium (a-Se) detectors for both chest radiography and mammography. The authors analyze the dependence of the residual current on various factors, such as x-ray exposure, applied electric field, and temperature. The electron trapping and detrapping mostly determines the residual current in a-Se detectors. The lag signal is more prominent in chest radiographic detector than in mammographic detectors. The model calculations are compared with the published experimental data and show a very good agreement.

  18. Selenium intakes of children from rural Malawi and Papua New Guinea (PNG)

    SciTech Connect (OSTI)

    Donovan, U.; Gibson, R.S.; Ferguson, E.L.; Ounpuu, S.; Heywood, P. Papua New Guinea Inst. of Medical Research, Medang )

    1991-03-11

    Selenium intakes of 66 rural Malawian children aged 4-6 y consuming maize-based diets were compared with those of 67 Papua New Guinea (PNG) children aged 6-10 y with diets based on bananas, sweet potatoes, and sago. Representative samples of all staple foods consumed were collected, dried, ground and subsequently analyzed for Se by instrumental neutron activation analysis using {sup 77}Se. Median Se intakes for the Malawian children determined by weighed 3-day records at 3 seasons of the year were: harvest 20 {mu}g/d, 1.24 {mu}g/kg; postharvest 21 {mu}g/d, 1.24 {mu}g/kg; preharvest 15 {mu}g/d, 0.96 {mu}g/kg. For the PNG children the median intake during the rainy season, assessed from two 24 hr interactive recalls, was 20 {mu}g/d, 0.89 {mu}g/kg. Four food groups contributed to {ge}95% of the total Se intake for both the Malawian and the PNG children. Of the children, 55% of the Malawian and 87% of the PNG had average Se intakes {lt} US Recommended Dietary Allowances (RDA); 16% and 48% respectively, had intakes {lt}66% US RDA. Average Se intakes were below those reported for US and Australian children but above those of children from New Zealand where Se intakes are low.

  19. Genomic and ecosystem evidence demonstrate the importance of selenium for the harmful alga, Aureococcus anophagefferens

    SciTech Connect (OSTI)

    Gobler, Christopher J; Lobanov, Alexei V; Tang, Ying-Zhong; Turanov, Anton A; Zhang, Yan; Doblin, Martina; Taylor, Gordon T; Sanudo-Wilhelmy, Sergio A; Grigoriev, Igor V; Gladyshev, Vadim N

    2012-10-19

    The trace element selenium (Se) is required for the biosynthesis of selenocysteine (Sec), the 21st amino acid in the genetic code, but its role in the ecology of harmful algal blooms (HABs) is unknown. Here, we examined the role of Se in the biology and ecology of the harmful pelagophyte, Aureococcus anophagefferens, through cell culture, genomic analyses, and ecosystem studies. This organism has the largest and the most diverse selenoproteome identified to date that consists of at least 59 selenoproteins, including known eukaryotic selenoproteins, selenoproteins previously only detected in bacteria, and novel selenoproteins. The A. anophagefferens selenoproteome was dominated by the thioredoxin fold proteins and oxidoreductase functions were assigned to the majority of detected selenoproteins. Insertion of Sec in these proteins was supported by a unique Sec insertion sequence. Se was required for the growth of A. anophagefferens as cultures grew maximally at nanomolar Se concentrations. In a coastal ecosystem, dissolved Se concentrations were elevated before and after A. anophagefferens blooms, but were reduced by >95percent during the peak of blooms to 0.05 nM. Consistent with this pattern, enrichment of seawater with selenite before and after a bloom did not affect the growth of A. anophagefferens, but enrichment during the peak of the bloom significantly increased population growth rates. These findings demonstrate that Se inventories, which can be anthropogenically enriched, can support proliferation of HABs, such as A. anophagefferens through its synthesis of a large arsenal of Se-dependent oxidoreductases that fine-tune cellular redox homeostasis.

  20. Distributions of selenium, iodine, lead, thorium and uranium in Japanese river waters

    SciTech Connect (OSTI)

    Tagami, K.; Uchida, S.

    2007-07-01

    Long-lived radionuclides released from nuclear facilities, such as deep underground disposal facilities, could reach humans through several transfer paths in the environment. Uses of ground water and river water for agricultural field irrigation and for drinking water are important paths. In order to understand behavior of long-lived radionuclides in the terrestrial water environment, we carried out a natural analogue study, that is, measurement of selenium (Se), iodine (I), lead (Pb), thorium (Th) and uranium (U) concentrations in 45 Japanese rivers at 10 sampling points from the upper stream to the river mouth for each river. Geometric mean concentrations for Se, I, Pb, Th and U were 0.057, 1.4, 0.039, 0.0055, 0.0109 ng/mL, respectively. Distribution patterns from upper stream to river mouth were different by elements, for instance, the concentrations of I, Th and U increased when the sampling points were nearer the river mouth, while that of Se were almost constant. For Pb, the highest value was observed in the middle part of each river in many cases. (authors)

  1. Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Eyderman, Sergey; John, Sajeev

    2016-06-23

    Here, we demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2.more » Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 103 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%.« less

  2. (Ion beam deposition of epitaxial germanium and gallium arsenide layers): Foreign trip report, June 2, 1989--June 18, 1989

    SciTech Connect (OSTI)

    Haynes, T.E.

    1989-07-05

    The traveler presented an invited paper entitled ''Ion Beam Deposition of Epitaxial Germanium and Gallium Arsenide Layers'' at the Twelfth Symposium on Ion Sources and Ion-Assisted Technology (ISIAT '89) in Tokyo. During informal conversations at this meeting, the traveler was informed about a new Japanese initiative, sponsored by the Ministry of International Trade and Industry and an industrial consortium, to establish an Ion Engineering Research Center, whose purpose will be to provide sophisticated equipment and technology base for exploring and developing new applications of ion beam processing. The traveler also visited five Japanese laboratories involved in research on ion-solid interactions. Developments in ionized cluster beam (ICB) deposition were emphasized at ISIAT '89 and during visits to Kyoto University, where the ICB technique was pioneered, and to Mitsubishi Electric's Itami Works, where commercial ICB systems are now being produced. Discussions at Osaka University concentrated on the application of focused ion beams for maskless patterning of submicron devices and on recent studies of one- dimensional quantum effects in semiconductor wires. At Hitachi Research Laboratory, basic research on thin-film growth was described, as well as progress toward the development of a variable frequency RF quadrupole accelerator for ion implantation. Researchers at JAERI outlined programs in characterization and thin-film deposition of superconductors and in materials science studies using high-energy ion beams.

  3. LIFE CYCLE INVENTORY ANALYSIS IN THE PRODUCTION OF METALS USED IN PHOTOVOLTAICS.

    SciTech Connect (OSTI)

    FTHENAKIS,V.M.; KIM, H.C.; WANG, W.

    2007-03-30

    Material flows and emissions in all the stages of production of zinc, copper, aluminum, cadmium, indium, germanium, gallium, selenium, tellurium, and molybdenum were investigated. These metals are used selectively in the manufacture of solar cells, and emission and energy factors in their production are used in the Life Cycle Analysis (LCA) of photovoltaics. Significant changes have occurred in the production and associated emissions for these metals over the last 10 years, which are not described in the LCA databases. Furthermore, emission and energy factors for several of the by-products of the base metal production were lacking. This report aims in updating the life-cycle inventories associated with the production of the base metals (Zn, Cu, Al, Mo) and in defining the emission and energy allocations for the minor metals (Cd, In, Ge, Se, Te and Ga) used in photovoltaics.

  4. Leaching characteristics of arsenic and selenium from coal fly ash: role of calcium

    SciTech Connect (OSTI)

    Tian Wang; Jianmin Wang; Yulin Tang; Honglan Shi; Ken Ladwig

    2009-05-15

    Understanding the leaching behavior of arsenic (As) and selenium (Se) in coal fly ash is important in evaluating the potential environmental impact of coal fly ash. Batch experiments were employed to systematically investigate the leaching behavior of As and Se in two major types of coal fly ashes, bituminous coal ash and sub-bituminous coal ash, and to determine the underlying processes that control As and Se leaching. The effects of pH, solid/liquid (S/L) ratio, calcium addition, and leaching time on the release of As and Se were studied. Overall, bituminous coal ash leached significantly more As and Se than sub-bituminous coal ash, and Se was more readily leachable, in both absolute concentration and relative fraction, than As for both types of fly ashes. Adsorption/desorption played a major role on As and Se leaching from bituminous coal ashes. However, calcium precipitation played the most important role in reducing As and Se leaching from sub-bituminous coal ashes in the entire experimental pH range. The leaching of As and Se from bituminous coal ashes generally increased with increases in the S/L ratio and leaching time. However, for sub-bituminous coal ashes, the leaching of As was not detected under most experimental conditions, while the leaching of Se increased with increases in the S/L ratio and leaching time. As{sup V} and Se{sup IV} were found to be the major species in all ash leachates in this study. 46 refs., 7 figs., 1 tab.

  5. Protection of cisplatin-induced spermatotoxicity, DNA damage and chromatin abnormality by selenium nano-particles

    SciTech Connect (OSTI)

    Rezvanfar, Mohammad Amin; Rezvanfar, Mohammad Ali; Shahverdi, Ahmad Reza; Ahmadi, Abbas; Baeeri, Maryam; Mohammadirad, Azadeh; Abdollahi, Mohammad

    2013-02-01

    Cisplatin (CIS), an anticancer alkylating agent, induces DNA adducts and effectively cross links the DNA strands and so affects spermatozoa as a male reproductive toxicant. The present study investigated the cellular/biochemical mechanisms underlying possible protective effect of selenium nano-particles (Nano-Se) as an established strong antioxidant with more bioavailability and less toxicity, on reproductive toxicity of CIS by assessment of sperm characteristics, sperm DNA integrity, chromatin quality and spermatogenic disorders. To determine the role of oxidative stress (OS) in the pathogenesis of CIS gonadotoxicity, the level of lipid peroxidation (LPO), antioxidant enzymes including superoxide dismutase (SOD), catalase (CAT) and glutathione peroxidase (GSH-Px) and peroxynitrite (ONOO) as a marker of nitrosative stress (NS) and testosterone (T) concentration as a biomarker of testicular function were measured in the blood and testes. Thirty-two male Wistar rats were equally divided into four groups. A single IP dose of CIS (7 mg/kg) and protective dose of Nano-Se (2 mg/kg/day) were administered alone or in combination. The CIS-exposed rats showed a significant increase in testicular and serum LPO and ONOO level, along with a significant decrease in enzymatic antioxidants levels, diminished serum T concentration and abnormal histologic findings with impaired sperm quality associated with increased DNA damage and decreased chromatin quality. Coadministration of Nano-Se significantly improved the serum T, sperm quality, and spermatogenesis and reduced CIS-induced free radical toxic stress and spermatic DNA damage. In conclusion, the current study demonstrated that Nano-Se may be useful to prevent CIS-induced gonadotoxicity through its antioxidant potential. Highlights: ? Cisplatin (CIS) affects spermatozoa as a male reproductive toxicant. ? Effect of Nano-Se on CIS-induced spermatotoxicity was investigated. ? CIS-exposure induces oxidative sperm DNA damage and

  6. Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes

    SciTech Connect (OSTI)

    Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2014-01-27

    We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup ?} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2?eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91?cd/A, 102?lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

  7. Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating

    DOE Patents [OSTI]

    Howard, Stanley R.; Korinko, Paul S.

    2008-05-27

    A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

  8. Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

    SciTech Connect (OSTI)

    Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Bong Kyu; Ahn, Chang-Geun; Kim, Sang-Hyeob [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of); Choi, Chel-Jong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-07-21

    We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter?

  9. Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

    SciTech Connect (OSTI)

    Kang, Dong-Ho; Park, Jin-Hong

    2014-12-15

    Highlights: • In- and Sn-based MIC phenomenon on amorphous (α)-Ge is newly reported. • The In- and Sn-MIC phenomenon respectively started at 250 °C and 400 °C. • The Sn-MIC process presents higher sheet resistance and bigger crystal grains. - Abstract: In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

  10. Large-scale patterning of indium tin oxide electrodes for guided mode extraction from organic light-emitting diodes

    SciTech Connect (OSTI)

    Geyer, Ulf; Hauss, Julian; Riedel, Boris; Gleiss, Sebastian; Lemmer, Uli; Gerken, Martina

    2008-11-01

    We describe a cost-efficient and large area scalable production process of organic light-emitting diodes (OLEDs) with photonic crystals (PCs) as extraction elements for guided modes. Using laser interference lithography and physical plasma etching, we texture the indium tin oxide (ITO) electrode layer of an OLED with one- and two-dimensional PC gratings. By optical transmission measurements, the resonant mode of the grating is shown to have a drift of only 0.4% over the 5 mm length of the ITO grating. By changing the lattice constant between 300 and 600 nm, the OLED emission angle of enhanced light outcoupling is tailored from -24.25 deg. to 37 deg. At these angles, the TE emission is enhanced up to a factor of 2.14.

  11. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Leisch, Jennifer; Taylor, Matthew; Stanbery, Billy J.

    2011-09-20

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  12. An Alternative Interpretation of Plasma Selenium Data from Endangered Patagonian Huemul Deer ( Hippocamelus bisulcus )

    SciTech Connect (OSTI)

    Flueck, Werner T.; Smith-Flueck, Jo Anne M.; Mincher, Bruce J.; Winkel, Lenny H. H.E.

    2014-10-01

    The prevalence of osteopathology in 57% in the endangered adult Patagonian huemul deer (Hippocamelus bisulcus), malformed antler development, and general lack of recovery were previously suggested to possibly be related to mineral imbalances like selenium (Se) deficiency, and not to stem from fluorosis. From recent bone analyses of these diseased huemul, fluoride levels averaged 58 ppm (SE=10.7), thus eliminating fluorosis as a causal factor for the osteopathology reported in huemul. In contrast, when analyzing high-elevation sites commonly used by extant populations, we found soils deficient in Se. Ashes from recent volcanism also were very low in Se. As Se-responsive diseases in livestock have been documented in Chile, we reclassified recently published Se levels in huemul and determined that 73% were deficient and 18% marginal. Together with these several lines of indirect evidence, we conclude that Se deficiency plays a role in the lack of recovery of huemul populations.

  13. Quantification and impact of nonparabolicity of the conduction band of indium tin oxide on its plasmonic properties

    SciTech Connect (OSTI)

    Liu, Xiaoge; Park, Junghyun; Kang, Ju-Hyung; Yuan, Hongtao; Cui, Yi; Hwang, Harold Y.; Brongersma, Mark L.

    2014-11-03

    Doped indium tin oxide (ITO) behaves as a Drude metal with a plasma frequency that is controlled by its free carrier density. In this work, we systematically tune this frequency across the mid-infrared range by annealing treatments in a reducing environment that produce high electron concentrations (∼10{sup 21 }cm{sup −3}). The changes in ITO's optical properties that result from the changes in carrier density are measured by attenuated total reflection measurements. These optical frequency measurements are complemented by Hall measurements to obtain a comprehensive picture of the Drude response of the ITO films. It was found that a complete description of the optical properties at very high carrier densities needs to account for the nonparabolicity of the conduction band of ITO and a reduced carrier mobility. More specifically, an increase in carrier concentration from 6.2 × 10{sup 19 }cm{sup −3} to 1.4 × 10{sup 21 }cm{sup −3} comes with a change of the effective electron mass from 0.35 m{sub 0} to 0.53 m{sub 0} and a decrease in the optical frequency mobility from about 20 cm{sup 2} V{sup −1} s{sup −1} to 9 cm{sup 2} V{sup −1} s{sup −1}.

  14. Hydrogen Sensor Based on Yttria-Stabilized Zirconia Electrolyte and Tin-Doped Indium Oxide Sensing Electrode

    SciTech Connect (OSTI)

    Martin, L P; Glass, R S

    2004-03-26

    A solid state electrochemical sensor has been developed for hydrogen leak detection in ambient air. The sensor uses an yttria-stabilized electrolyte with a tin-doped indium oxide sensing electrode and a Pt reference electrode. Excellent sensitivity, and response time of one second or less, are reported for hydrogen gas over the concentration range of 0.03 to 5.5% in air. Cross-sensitivity to relative humidity and to CO{sub 2} are shown to be low. The response to methane, a potentially significant source of interference for such a sensor, is significantly less than that for hydrogen. The sensor shows good reproducibility and was unaffected by thermal cycling over the course of this investigation. The effects of sensing electrode thickness and thermal aging are also reported, and the sensing mechanism is discussed. The sensor is intended for use in vehicles powered by hydrogen fuel cells and hydrogen internal combustion engines. Those vehicles will use and/or store significant quantities of hydrogen, and will require safety sensor for monitoring potential hydrogen leakage in order to ensure passenger safety.

  15. Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

    SciTech Connect (OSTI)

    Wang Haifeng; Huang Zhimeng; Zhang Dayong; Luo Fei; Huang Lixian; Li Yanglong; Luo Yongquan; Wang Weiping; Zhao Xiangjie

    2011-12-01

    Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

  16. Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gehl, Michael; Gibson, Ricky; Zandbergen, Sander; Keiffer, Patrick; Sears, Jasmine; Khitrova, Galina

    2016-02-01

    Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors,more » with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.« less

  17. Information technology and innovative drainage management practices for selenium load reduction from irrigated agriculture to provide stakeholder assurances and meet contaminant mass loading policy objectives

    SciTech Connect (OSTI)

    Quinn, N.W.T.

    2009-10-15

    Many perceive the implementation of environmental regulatory policy, especially concerning non-point source pollution from irrigated agriculture, as being less efficient in the United States than in many other countries. This is partly a result of the stakeholder involvement process but is also a reflection of the inability to make effective use of Environmental Decision Support Systems (EDSS) to facilitate technical information exchange with stakeholders and to provide a forum for innovative ideas for controlling non-point source pollutant loading. This paper describes one of the success stories where a standardized Environmental Protection Agency (EPA) methodology was modified to better suit regulation of a trace element in agricultural subsurface drainage and information technology was developed to help guide stakeholders, provide assurances to the public and encourage innovation while improving compliance with State water quality objectives. The geographic focus of the paper is the western San Joaquin Valley where, in 1985, evapoconcentration of selenium in agricultural subsurface drainage water, diverted into large ponds within a federal wildlife refuge, caused teratogenecity in waterfowl embryos and in other sensitive wildlife species. The fallout from this environmental disaster was a concerted attempt by State and Federal water agencies to regulate non-point source loads of the trace element selenium. The complexity of selenium hydrogeochemistry, the difficulty and expense of selenium concentration monitoring and political discord between agricultural and environmental interests created challenges to the regulation process. Innovative policy and institutional constructs, supported by environmental monitoring and the web-based data management and dissemination systems, provided essential decision support, created opportunities for adaptive management and ultimately contributed to project success. The paper provides a retrospective on the contentious planning

  18. Recent advances in the speciation of selenium in petroleum refinery and municipal waste using ICP-MS and ICP-MS coupled with liquid chromatography

    SciTech Connect (OSTI)

    Roehl, R.

    1996-09-01

    An analytical scheme for the speciation of selenium in petroleum refinery waste waters reported at the 1994 Winter Plasma Conference included methods for the determination of total, dissolved, particulate and volatile selenium, as well as for the separate quantitation of dissolved selenite, selenate and selenocyanate. Several of those methods have been improved significantly. Determinations of total, dissolved, and particulate selenium are based on the ICP-MS quantitation of the {sup 82}Se isotope in waste water samples or sample fractions digested with hydrogen peroxide and nitric acid. These analyses now include corrections for potential isobaric interferences are minimized by monitoring the signals for Br{sup +} and m/z 79 and SO{sub 3}H{sup +} at m/z 83 and correcting the apparent {sup 82}Se{sup +} signal using appropriate equations with correction factors derived from the analysis of calibration solutions containing sulfate and bromide. The correction factors used in those equations relate ionic species of different composition to each other (e.g., Br{sup +} and HBr{sup +}). To help ensure that the relative rate of formation of those ions in the plasma is not sample dependent, high concentrations of sodium and other easily ionized elements are removed from the sample digests by cation-exchange.

  19. Growth of gallium nitride films via the innovative technique of atomic-layer epitaxy. Annual progress report, 1 June 1987-31 May 1988

    SciTech Connect (OSTI)

    Davis, R.F.; Paisley, M.J.; Sitar, Z.

    1988-06-01

    Gallium nitride (GaN) is a wide-bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron-drift velocity of GaN are important properties in the performance of short-wavelength optical devices and high-power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or Al/sub x/Ga/sub 1-x/N devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high-power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue-light-emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.

  20. Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

    SciTech Connect (OSTI)

    Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

    2014-06-09

    We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

  1. Hydrogenated indium oxide window layers for high-efficiency Cu(In,Ga)Se{sub 2} solar cells

    SciTech Connect (OSTI)

    Jäger, Timo Romanyuk, Yaroslav E.; Nishiwaki, Shiro; Bissig, Benjamin; Pianezzi, Fabian; Fuchs, Peter; Gretener, Christina; Tiwari, Ayodhya N.; Döbeli, Max

    2015-05-28

    High mobility hydrogenated indium oxide is investigated as a transparent contact for thin film Cu(In,Ga)Se{sub 2} (CIGS) solar cells. Hydrogen doping of In{sub 2}O{sub 3} thin films is achieved by injection of H{sub 2}O water vapor or H{sub 2} gas during the sputter process. As-deposited amorphous In{sub 2}O{sub 3}:H films exhibit a high electron mobility of ∼50 cm{sup 2}/Vs at room temperature. A bulk hydrogen concentration of ∼4 at. % was measured for both optimized H{sub 2}O and H{sub 2}-processed films, although the H{sub 2}O-derived film exhibits a doping gradient as detected by elastic recoil detection analysis. Amorphous IOH films are implemented as front contacts in CIGS based solar cells, and their performance is compared with the reference ZnO:Al electrodes. The most significant feature of IOH containing devices is an enhanced open circuit voltage (V{sub OC}) of ∼20 mV regardless of the doping approach, whereas the short circuit current and fill factor remain the same for the H{sub 2}O case or slightly decrease for H{sub 2}. The overall power conversion efficiency is improved from 15.7% to 16.2% by substituting ZnO:Al with IOH (H{sub 2}O) as front contacts. Finally, stability tests of non-encapsulated solar cells in dry air at 80 °C and constant illumination for 500 h demonstrate a higher stability for IOH-containing devices.

  2. SU-E-T-557: Measuring Neutron Activation of Cardiac Devices Irradiated During Proton Therapy Using Indium Foils

    SciTech Connect (OSTI)

    Avery, S; Christodouleas, J; Delaney, K; Diffenderfer, E; Brown, K

    2014-06-01

    Purpose: Measuring Neutron Activation of Cardiac devices Irradiated during Proton Therapy using Indium Foils Methods: The foils had dimensions of 25mm x 25mm x 1mm. After being activated, the foils were placed in a Canberra Industries well chamber utilizing a NaI(Tl) scintillation detector. The resulting gamma spectrum was acquired and analyzed using Genie 2000 spectroscopy software. One activation foil was placed over the upper, left chest of RANDO where a pacemaker would be. The rest of the foils were placed over the midline of the patient at different distances, providing a spatial distribution over the phantom. Using lasers and BBs to align the patient, 200 MU square fields were delivered to various treatment sites: the brain, the pancreas, and the prostate. Each field was shot at least a day apart, giving more than enough time for activity of the foil to decay (t1=2 = 54.12 min). Results: The net counts (minus background) of the three aforementioned peaks were used for our measurements. These counts were adjusted to account for detector efficiency, relative photon yields from decay, and the natural abundance of 115-In. The average neutron flux for the closed multi-leaf collimator irradiation was measured to be 1.62 x 106 - 0.18 x 106 cm2 s-1. An order of magnitude estimate of the flux for neutrons up to 1 keV from Diffenderfer et al. gives 3 x 106 cm2 s-1 which does agree on the order of magnitude. Conclusion: Lower energy neutrons have higher interaction cross-sections and are more likely to damage pacemakers. The thermal/slow neutron component may be enough to estimate the overall risk. The true test of the applicability of activation foils is whether or not measurements are capable of predicting cardiac device malfunction. For that, additional studies are needed to provide clinical evidence one way or the other.

  3. Neutron diffraction and thermoelectric properties of indium filled In x Co 4 Sb 12 ( x=0.05, 0.2) and indium cerium filled Ce 0.05 In 0.1 Co 4 Sb 12 skutterudites: Neutron diffraction and thermoelectric properties of In/Ce skutterudites

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sesselmann, Andreas; Klobes, Benedikt; Dasgupta, Titas; Gourdon, Olivier; Hermann, Raphael; Mueller, Eckhard

    2015-09-25

    The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions InxCo4Sb12 (x= 0.05, 0.2) and Ce0.05In0.1Co4Sb12 as a function of temperature (12- 300 K) were carried out, which gives more insight into the structural data of single and double-filled skutterudites. Our results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that a considerable amount of indium is lost duringmore » synthesis and post-processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. The double-filled skutterudite is superior to the single-filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass in our experiment. Finally, we obtained a significantly higher Einstein temperature for the double-filled skutterudite composition in comparison to the single-filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal.« less

  4. Selenium Preferentially Accumulates in the Eye Lens Following Embryonic Exposure: A Confocal X-ray Fluorescence Imaging Study

    SciTech Connect (OSTI)

    Choudhury, Sanjukta; Thomas, Jith; Sylvain, Nicole J.; Ponomarenko, Olena; Gordon, Robert A.; Heald, Steve M.; Janz, David M.; Krone, Patrick H.; Coulthard, Ian; George, Graham N.; Pickering, Ingrid J.

    2015-02-17

    Maternal transfer of elevated selenium (Se) to offspring is an important route of Se exposure for fish in the natural environment. However, there is a lack of information on the tissue specific spatial distribution and speciation of Se in the early developmental stages of fish, which provide important information about Se toxicokinetics. The effect of maternal transfer of Se was studied by feeding adult zebrafish a Se-elevated or a control diet followed by collection of larvae from both groups. Novel confocal synchrotron-based techniques were used to investigate Se within intact preserved larvae. Confocal X-ray fluorescence imaging was used to compare Se distributions within specific planes of an intact larva from each of the two groups. The elevated Se treatment showed substantially higher Se levels than the control; Se preferentially accumulated to highest levels in the eye lens, with lower levels in the retina, yolk and other tissues. Confocal X-ray absorption spectroscopy was used to determine that the speciation of Se within the eye lens of the intact larva was a selenomethionine-like species. Preferential accumulation of Se in the eye lens may suggest a direct cause-and-effect relationship between exposure to elevated Se and Se-induced ocular impairments reported previously. This study illustrates the effectiveness of confocal X-ray fluorescence methods for investigating trace element distribution and speciation in intact biological specimens

  5. The role of cobalt doping on magnetic and optical properties of indium oxide nanostructured thin film prepared by sol–gel method

    SciTech Connect (OSTI)

    Baqiah, H.; Ibrahim, N.B.; Halim, S.A.; Flaifel, Moayad Husein; Abdi, M.H.

    2015-03-15

    Highlights: • Cobalt doped indium oxide thin films have been prepared by a sol–gel method. • The films have a thickness less than 100 nm and grain size less than 10 nm. • The lattice parameters and grain size of films decrease as Co content increase. • The optical band gap of films increases as the grain size decrease. • The films' magnetic behaviour is sensitive to ratio of oxygen defects per Co ions. - Abstract: The effect of Co doping concentration, (x = 0.025–0.2), in In{sub 2−x}Co{sub x}O{sub 3} thin film was investigated by X-rays diffraction (XRD), transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Ultraviolet visible spectrophotometer (UV–vis) and vibrating sample magnetometer (VSM). All films were prepared by sol–gel technique followed by spin coating process. The XRD and XPS measurements indicate that Co{sup +2} has been successfully substituted in In{sup +3} site. The TEM measurement shows nanostructure morphology of the films. The doping of Co in indium oxide resulted in a decrease in the lattice parameters and grain size while the band gap increased with increasing Co concentration. Further, by comparing VSM and XPS results, the magnetic behaviour of the films were found to be sensitive to Co concentrations, oxygen vacancies and ratio of oxygen defects to Co concentrations. The magnetic behaviour of the prepared films was explained using bound magnetic polaron (BMP) model.

  6. Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

    SciTech Connect (OSTI)

    Albrecht, M. Schewski, R.; Irmscher, K.; Galazka, Z.; Markurt, T.; Naumann, M.; Schulz, T.; Uecker, R.; Fornari, R.; Meuret, S.; Kociak, M.

    2014-02-07

    In this paper, we show by optical and electron microscopy based investigations that vacancies in oxides may cluster and form metallic nanoparticles that induce coloration by extinction of visible light. Optical extinction in this case is caused by generation of localized surface plasmon resonances at metallic particles embedded in the dielectric matrix. Based on Mie's approach, we are able to fit the absorption due to indium nanoparticles in In{sub 2}O{sub 3} to our absorption measurements. The experimentally found particle distribution is in excellent agreement with the one obtained from fitting by Mie theory. Indium particles are formed by precipitation of oxygen vacancies. From basic thermodynamic consideration and assuming theoretically calculated activation energies for vacancy formation and migration, we find that the majority of oxygen vacancies form just below the melting point. Since they are ionized at this temperature they are Coulomb repulsive. Upon cooling, a high supersaturation of oxygen vacancies forms in the crystal that precipitates once the Fermi level crosses the transition energy level from the charged to the neutral charge state. From our considerations we find that the ionization energy of the oxygen vacancy must be higher than 200 meV.

  7. Partitioning of mercury, arsenic, selenium, boron, and chloride in a full-scale coal combustion process equipped with selective catalytic reduction, electrostatic precipitation, and flue gas desulfurization systems

    SciTech Connect (OSTI)

    Chin-Min Cheng; Pauline Hack; Paul Chu; Yung-Nan Chang; Ting-Yu Lin; Chih-Sheng Ko; Po-Han Chiang; Cheng-Chun He; Yuan-Min Lai; Wei-Ping Pan

    2009-09-15

    A full-scale field study was carried out at a 795 MWe coal-fired power plant equipped with selective catalytic reduction (SCR), an electrostatic precipitator (ESP), and wet flue gas desulfurization (FGD) systems to investigate the distribution of selected trace elements (i.e., mercury, arsenic, selenium, boron, and chloride) from coal, FGD reagent slurry, makeup water to flue gas, solid byproduct, and wastewater streams. Flue gases were collected from the SCR outlet, ESP inlet, FGD inlet, and stack. Concurrent with flue gas sampling, coal, bottom ash, economizer ash, and samples from the FGD process were also collected for elemental analysis. By combining plant operation parameters, the overall material balances of selected elements were established. The removal efficiencies of As, Se, Hg, and B by the ESP unit were 88, 56, 17, and 8%, respectively. Only about 2.5% of Cl was condensed and removed from flue gas by fly ash. The FGD process removed over 90% of Cl, 77% of B, 76% of Hg, 30% of Se, and 5% of As. About 90% and 99% of the FGD-removed Hg and Se were associated with gypsum. For B and Cl, over 99% were discharged from the coal combustion process with the wastewater. Mineral trona (trisodium hydrogendicarbonate dehydrate, Na{sub 3}H(CO{sub 3}){sub 2}.2H{sub 2}O) was injected before the ESP unit to control the emission of sulfur trioxide (SO{sub 3}). By comparing the trace elements compositions in the fly ash samples collected from the locations before and after the trona injection, the injection of trona did not show an observable effect on the partitioning behaviors of selenium and arsenic, but it significantly increased the adsorption of mercury onto fly ash. The stack emissions of mercury, boron, selenium, and chloride were for the most part in the gas phase. 47 refs., 3 figs., 11 tabs.

  8. Characterization of mercury, arsenic, and selenium in the product streams of the Pacific Northwest Laboratory 6-kg retort

    SciTech Connect (OSTI)

    Olsen, K.B.; Evans, J.C.; Sklarew, D.S.; Girvin, D.C.; Nelson, C.L.; Lepel, E.A.; Robertson, D.E.; Sanders, R.W.

    1985-12-01

    The objective of this program is to determine how retorting process parameters affect the partitioning of Hg, As, Se, and Cd from raw oil shale to spent shale, shale oil, retort water, and offgas. For each of the elements, the objective of this study is to (1) determine the distribution coefficients for each product stream; (2) identify the chemical forms in water, gas, and oil streams, with particular emphasis on inorganic or organometallic species known to be or suspected of being carcinogenic, toxic, or otherwise harmful; (3) investigate the mechanism(s) responsible for mobilization into each product stream for toxic or labile chemical forms identified in item 2 are mobilized into each product stream; and (4) the effect of retorting rate, maximum retorting temperature, and retorting atmosphere on items 1 and 3. A Green River shale from Colorado and a New Albany shale from Kentucky were heated at 1 to 2/sup 0/C/min and at 10/sup 0/C/min to maximum temperatures of 500 and 750/sup 0/C under a nitrogen sweep gas. The product streams were analyzed using a variety of methods including Zeeman atomic absorption spectroscopy, microwave-induced helium plasma spectroscopy, x-ray fluorescence, instrumental neutron activation analysis, high-pressure liquid and silica gel column chromatography, and mercury cold vapor atomic absorption. The results obtained using these analytical methods indicate that the distribution of mercury, arsenic, and selenium in the product stream is a function of oil shale type, heating rates, and maximum retorting temperatures. 11 refs., 27 figs., 5 tabs.

  9. Summer 2010 Intern Project- Ali Al-Heji | Center for Energy Efficient...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mentor: Robert M. Farrell Faculty Advisor: James S. Speck Department: Materials Indium gallium nitride (InGaN) solar cells show promise for absorbing high-energy photons with ...

  10. Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008

    SciTech Connect (OSTI)

    Olsen, L. C.

    2010-03-01

    This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

  11. Thin-Film Photovoltaics on Solar House

    Broader source: Energy.gov [DOE]

    In this photograph, people are reflected on Team Germany's window louvers with integrated thin-film copper indium gallium selenide (CIGS) cells during the U.S. Department of Energy Solar Decathlon...

  12. PROJECT PROFILE: University of Illinois-Urbana Champaign (PREDICTS...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    how to reduce the instability of materials used for copper indium gallium selenide solar (CIGS) cells or thin film photovoltaics (PV) when they are exposed to water and light. ...

  13. Nuvosun Inc | Open Energy Information

    Open Energy Info (EERE)

    Nuvosun Inc Place: Palo Alto, California Zip: 94303-4601 Product: California-based copper indium gallium (di)selenide (CIGS) thin film PV maker. References: Nuvosun Inc1 This...

  14. A Mechanistic Study of CO2 Reduction at the Interface of a Gallium Phosphide (GaP) Surface using Core-level Spectroscopy - Oral Presentation

    SciTech Connect (OSTI)

    Flynn, Kristen

    2015-08-19

    Carbon dioxide (CO2) emission into the atmosphere has increased tremendously through burning of fossil fuels, forestry, etc.. The increased concentration has made CO2 reductions very attractive though the reaction is considered uphill. Utilizing the sun as a potential energy source, CO2 has the possibility to undergo six electron and four proton transfers to produce methanol, a useable resource. This reaction has been shown to occur selectively in an aqueous pyridinium solution with a gallium phosphide (GaP) electrode. Though this reaction has a high faradaic efficiency, it was unclear as to what role the GaP surface played during the reaction. In this work, we aim to address the fundamental role of GaP during the catalytic conversion, by investigating the interaction between a clean GaP surface with the reactants, products, and intermediates of this reaction using X-ray photoelectron spectroscopy. We have determined a procedure to prepare atomically clean GaP and our initial CO2 adsorption studies have shown that there is evidence of chemisorption and reaction to form carbonate on the clean surface at LN2 temperatures (80K), in contrast to previous theoretical calculations. These findings will enable future studies on CO2 catalysis.

  15. A Mechanistic Study of CO2 Reduction at the Interface of a Gallium Phosphide (GaP) Surface using Core-level Spectroscopy

    SciTech Connect (OSTI)

    Flynn, Kristen

    2015-08-18

    Carbon dioxide (CO2) emission into the atmosphere has increased tremendously through burning of fossil fuels, forestry, etc.. The increased concentration has made CO2 reductions very attractive though the reaction is considered uphill. Utilizing the sun as a potential energy source, CO2 has the possibility to undergo six electron and four proton transfers to produce methanol, a useable resource. This reaction has been shown to occur selectively in an aqueous pyridinium solution with a gallium phosphide (GaP) electrode. Though this reaction has a high faradaic efficiency, it was unclear as to what role the GaP surface played during the reaction. In this work, we aim to address the fundamental role of GaP during the catalytic conversion, by investigating the interaction between a clean GaP surface with the reactants, products, and intermediates of this reaction using X-ray photoelectron spectroscopy. We have determined a procedure to prepare atomically clean GaP and our initial CO2 adsorption studies have shown that there is evidence of chemisorption and reaction to form carbonate on the clean surface at LN2 temperatures (80K), in contrast to previous theoretical calculations. These findings will enable future studies on CO2 catalysis.

  16. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    SciTech Connect (OSTI)

    Jung, Mi E-mail: Dockha@kist.re.kr; Mo Yoon, Dang; Kim, Miyoung; Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha E-mail: Dockha@kist.re.kr; Lim, Si-Hyung

    2014-07-07

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  17. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup }1{sup }) GaN substrates

    SciTech Connect (OSTI)

    Pourhashemi, A. Farrell, R. M.; Cohen, D. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup }1{sup }) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451?nm at room temperature, an output power of 2.52?W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34?A. The measured differential quantum efficiency was 50%.

  18. CX-010895: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

  19. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    SciTech Connect (OSTI)

    Kashiwagi, Y. Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25?nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850?C for 10?min under atmospheric conditions, the resistivity of the ITO film was 5.2?m??cm. The fabricated LED up to 3?mm square surface emitted red light when the on-voltage was exceeded.

  20. Neutron diffraction and thermoelectric properties of indium filled In x Co 4 Sb 12 ( x=0.05, 0.2) and indium cerium filled Ce 0.05 In 0.1 Co 4 Sb 12 skutterudites: Neutron diffraction and thermoelectric properties of In/Ce skutterudites

    SciTech Connect (OSTI)

    Sesselmann, Andreas; Klobes, Benedikt; Dasgupta, Titas; Gourdon, Olivier; Hermann, Raphael; Mueller, Eckhard

    2015-09-25

    The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions InxCo4Sb12 (x= 0.05, 0.2) and Ce0.05In0.1Co4Sb12 as a function of temperature (12- 300 K) were carried out, which gives more insight into the structural data of single and double-filled skutterudites. Our results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that a considerable amount of indium is lost during synthesis and post-processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. The double-filled skutterudite is superior to the single-filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass in our experiment. Finally, we obtained a significantly higher Einstein temperature for the double-filled skutterudite composition in comparison to the single-filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal.

  1. High color rendering index white light emitting diodes fabricated from a combination of carbon dots and zinc copper indium sulfide quantum dots

    SciTech Connect (OSTI)

    Sun, Chun; Liu, Wenyan; Zhang, Xiaoyu; Zhang, Yu E-mail: wyu6000@gmail.com; Wang, Yu; Kalytchuk, Sergii; Kershaw, Stephen V.; Rogach, Andrey L.; Zhang, Tieqiang; Zhao, Jun; Yu, William W. E-mail: wyu6000@gmail.com

    2014-06-30

    In a line with most recent trends in developing non-toxic fluorescent nanomaterials, we combined blue emissive carbon dots with green and red emissive zinc copper indium sulfide (ZCIS) core/shell quantum dots (QDs) to achieve white light-emitting diodes (WLEDs) with a high color rendering index of 93. This indicates that ZCIS QDs, with their broad emission bands, can be employed to effectively make up the emission of carbon dots in the yellow and red regions to produce WLEDs in the wide region of color temperature by tuning the volume ratio of these constituting luminophores. Their electroluminescence characteristics including color rendering index, Commission Internationale de l'Eclairage (CIE) color coordinates, and color temperatures were evaluated as a function of forward current. The CIE-1931 chromaticity coordinates of the as-prepared WLEDs, exhibiting good stability, were slightly shifted from (0.321, 0.312) at 10?mA to (0.351, 0.322) at 30?mA, which was mainly caused by the different thermal quenching coefficients of carbon dots and ZCIS QDs.

  2. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man Mete, Tayfun; Ellmer, Klaus

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

  3. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

    SciTech Connect (OSTI)

    Ke, Wen-Cheng Yang, Cheng-Yi; Lee, Fang-Wei; Chen, Wei-Kuo; Huang, Hao-Ping

    2015-10-21

    This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

  4. Microstructure evolution of Al-doped zinc oxide and Sn-doped indium oxide deposited by radio-frequency magnetron sputtering: A comparison

    SciTech Connect (OSTI)

    Nie, Man; Bikowski, Andre; Ellmer, Klaus

    2015-04-21

    The microstructure and morphology evolution of Al-doped zinc oxide (AZO) and Sn-doped indium oxide (ITO) thin films on borosilicate glass substrates deposited by radio-frequency magnetron sputtering at room temperature (RT) and 300 °C were investigated by X-ray diffraction and atomic force microscopy (AFM). One-dimensional power spectral density (1DPSD) functions derived from the AFM profiles, which can be used to distinguish different growth mechanisms, were used to compare the microstructure scaling behavior of the thin films. The rms roughness R{sub q} evolves with film thickness as a power law, R{sub q} ∼ d{sub f}{sup β}, and different growth exponents β were found for AZO and ITO films. For AZO films, β of 1.47 and 0.56 are obtained for RT and 300 °C depositions, respectively, which are caused by the high compressive stress in the film at RT and relaxation of the stress at 300 °C. While for ITO films, β{sub 1} = 0.14 and β{sub 2} = 0.64 for RT, and β{sub 1} = 0.89 and β{sub 2} = 0.3 for 300 °C deposition are obtained, respectively, which is related to the strong competition between the surface diffusion and shadowing effect and/or grain growth. Electrical properties of both materials as a function of film thickness were also compared. By the modified Fuchs-Sondheimer model fitting of the electrical transport in both materials, different nucleation states are pointed out for both types of films.

  5. Relationship between selenium body burdens and tissue concentrations in fish exposed to coal ash at the Tennessee Valley Authority Kingston spill site

    SciTech Connect (OSTI)

    Mathews, Teresa J; Fortner, Allison M; Jett, Robert T; Peterson, Mark J; Carriker, Neil; Morris, Jesse G; Gable, Jennifer

    2014-01-01

    In December 2008, 4.1 million m3 of coal ash were released into the Emory and Clinch Rivers by the Tennessee Valley Authority (TVA) Kingston Fossil Plant. Coal ash contains several contaminants, including the bioaccumulative metalloid selenium (Se). Because Se is predominantly accumulated in aquatic organisms through dietary, rather than aqueous exposure, tissue-based toxicity thresholds for Se are currently being considered. The proposed threshold concentrations range between 4-9 g/g Se (dry wt.) in whole body fish, with a proposed fillet threshold of 11.8 g/g. In the present study we examined the spatial and temporal trends in Se bioaccumulation and examined the relationship between the Se content in fillets and in whole bodies of fish collected around the Kingston spill site to determine whether Se bioaccumulation was a significant concern at the ash spill site. While Se concentrations in fish (whole bodies and fillets) were elevated at sampling locations affected by the Kingston ash spill relative to reference locations, concentrations do not appear to be above risk thresholds and have not been increasing over the five year period since the spill. Our results are not only relevant to guiding the human health and ecological risk assessments at the Kingston ash spill site, but because of current national discussions on appropriate guidelines for Se in fish as well for the disposal of coal combustion wastes, our results are also relevant to the general understanding of Se bioaccumulation in contaminated water bodies.

  6. Hierarchical hollow microsphere and flower-like indium oxide: Controllable synthesis and application as H{sub 2}S cataluminescence sensing materials

    SciTech Connect (OSTI)

    Cai, Pingyang; Bai, Wei; Zhang, Lichun; Song, Hongjie; Su, Yingying; Lv, Yi

    2012-09-15

    Graphical abstract: Hierarchical hollow microsphere and flower-like In{sub 2}O{sub 3} were controllable fabricated through a novel and simple hydrothermal process, and the former showed superior cataluminescence sensing performance to H{sub 2}S. Highlights: ► In{sub 2}O{sub 3} hierarchical hollow sphere were prepared via a hydrothermal route. ► The growth process of In{sub 2}O{sub 3} hierarchical hollow sphere has been investigated. ► The sensor based on prepared In{sub 2}O{sub 3} shows good sensing performance to H{sub 2}S. -- Abstract: In the present work, In{sub 2}O{sub 3} hierarchical hollow microsphere and flower-like microstructure were achieved controllably by a hydrothermal process in the sodium dodecyl sulfate (SDS)-N,N-dimethyl-formamide (DMF) system. XRD, SEM, HRTEM and N{sub 2} adsorption measurements were used to characterize the as-prepared indium oxide materials and the possible mechanism for the microstructures formation was briefly discussed. The cataluminescence gas sensor based on the as-prepared In{sub 2}O{sub 3} was utilized to detect H{sub 2}S concentrations in flowing air. Comparative gas sensing results revealed that the sensor based on hierarchical hollow microsphere exhibited much higher sensing sensitivity in detecting H{sub 2}S gas than the sensor based on flower-like microstructure. The present gas sensor had a fast response time of 5 s and a recovery time of less than 25 s, furthermore, the cataluminescence intensity vs. H{sub 2}S concentration was linear in range of 2–20 μg mL{sup −1} with a detection limit of 0.5 μg mL{sup −1}. The present highly sensitive, fast-responding, and low-cost In{sub 2}O{sub 3}-based gas sensor for H{sub 2}S would have many practical applications.

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Publication about this research: G. Lee, J.Y. Kim, A.S. Budiman, N. Tamura, M. Kunz, K. Chen, M.J. Burek, J.R. Greer, and T.Y. Tsui, "Fabrication, structure and mechanical...

  8. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measuring energy efficiency: Opportunities from standardization and common metrics For 2016 EIA Energy Conference July 11, 2016 | Washington, D.C. By Stacy Angel, Energy Information Portfolio Analyst Carol White, Senior Energy Efficiency Analyst How is the importance of measuring energy efficiency changing? * The number of energy efficiency policies and programs is growing. * Common metrics help measure progress towards multiple objectives. * Clear metrics help consumers make informed energy

  9. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of GNDs. The initial density of GNDs in this grain was estimated to be 3.35 x 109 cm-2 (Cahn-Nye analysis), which translates into about 4.2 total dislocations in a 250-nm-diameter...

  10. Longitudinal spin Seebeck effect in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} prepared on gadolinium gallium garnet (001) by metal organic decomposition method

    SciTech Connect (OSTI)

    Asada, H. Kuwahara, A.; Sakata, N.; Ono, T.; Kishimoto, K.; Koyanagi, T.; Ishibashi, T.; Meguro, A.; Hashinaka, T.

    2015-05-07

    Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with the Ga composition x = 0, 0.5, and 1.0 are prepared on (001) oriented gadolinium gallium garnet substrates by a metal organic decomposition method. Only (001) peaks are observed in x-ray diffraction patterns for all the films, suggesting that the highly oriented Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films were formed. Increasing Ga composition, the saturation magnetization decreases, and the perpendicular easy axis is enhanced due to the decrease of the shape anisotropy. Longitudinal spin Seebeck effects (LSSEs) in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with a Pt layer of 10 nm in thickness were investigated. Magnetic field dependence of the thermoelectric voltage caused by the LSSE in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} films indicates the hysteresis loop with the small coercivity reflecting the magnetization curve. The decrease of LSSE voltage in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} is clearly observed with the decrease of Fe composition.

  11. TU-F-18C-02: Increasing Amorphous Selenium Thickness in Direct Conversion Flat-Panel Imagers for Contrast-Enhanced Dual-Energy Breast Imaging

    SciTech Connect (OSTI)

    Scaduto, DA; Hu, Y-H; Zhao, W

    2014-06-15

    Purpose: Contrast-enhanced (CE) breast imaging using iodinated contrast agents requires imaging with x-ray spectra at energies greater than those used in mammography. Optimizing amorphous selenium (a-Se) flat panel imagers (FPI) for this higher energy range may increase lesion conspicuity. Methods: We compare imaging performance of a conventional FPI with 200 μm a-Se conversion layer to a prototype FPI with 300 μm a-Se layer. Both detectors are evaluated in a Siemens MAMMOMAT Inspiration prototype digital breast tomosynthesis (DBT) system using low-energy (W/Rh 28 kVp) and high-energy (W/Cu 49 kVp) x-ray spectra. Detectability of iodinated lesions in dual-energy images is evaluated using an iodine contrast phantom. Effects of beam obliquity are investigated in projection and reconstructed images using different reconstruction methods. The ideal observer signal-to-noise ratio is used as a figure-of-merit to predict the optimal a-Se thickness for CE lesion detectability without compromising conventional full-field digital mammography (FFDM) and DBT performance. Results: Increasing a-Se thickness from 200 μm to 300 μm preserves imaging performance at typical mammographic energies (e.g. W/Rh 28 kVp), and improves the detective quantum efficiency (DQE) for high energy (W/Cu 49 kVp) by 30%. While the more penetrating high-energy x-ray photons increase geometric blur due to beam obliquity in the FPI with thicker a-Se layer, the effect on lesion detectability in FBP reconstructions is negligible due to the reconstruction filters employed. Ideal observer SNR for CE objects shows improvements in in-plane detectability with increasing a-Se thicknesses, though small lesion detectability begins to degrade in oblique projections for a-Se thickness above 500 μm. Conclusion: Increasing a-Se thickness in direct conversion FPI from 200 μm to 300 μm improves lesion detectability in CE breast imaging with virtually no cost to conventional FFDM and DBT. This work was partially

  12. Species-specific sensitivity to selenium-induced impairment of cortisol secretion in adrenocortical cells of rainbow trout (Oncorhynchus mykiss) and brook trout (Salvelinus fontinalis)

    SciTech Connect (OSTI)

    Miller, L.L. Hontela, A.

    2011-06-01

    Species differences in physiological and biochemical attributes exist even among closely related species and may underlie species-specific sensitivity to toxicants. Rainbow trout (RT) are more sensitive than brook trout (BT) to the teratogenic effects of selenium (Se), but it is not known whether all tissues exhibit this pattern of vulnerability. In this study, primary cultures of RT and BT adrenocortical cells were exposed to selenite (Na{sub 2}SO{sub 3}) and selenomethionine (Se-Met) to compare cell viability and ACTH-stimulated cortisol secretion in the two fish species. Cortisol, the primary stress hormone in fish, facilitates maintenance of homeostasis when fish are exposed to stressors, including toxicants. Cell viability was not affected by Se, but selenite impaired cortisol secretion, while Se-Met did not (RT and BT EC{sub 50} > 2000 mg/L). RT cells were more sensitive (EC{sub 50} = 8.7 mg/L) to selenite than BT cells (EC{sub 50} = 90.4 mg/L). To identify the targets where Se disrupts cortisol synthesis, selenite-impaired RT and BT cells were stimulated with ACTH, dbcAMP, OH-cholesterol, and pregnenolone. Selenite acted at different steps in the cortisol biosynthesis pathway in RT and BT cells, confirming a species-specific toxicity mechanism. To test the hypothesis that oxidative stress mediates Se-induced toxicity, selenite-impaired RT cells were exposed to NAC, BSO and antioxidants (DETCA, ATA, Vit A, and Vit E). Inhibition of SOD by DETCA enhanced selenite-induced cortisol impairment, indicating that oxidative stress plays a role in Se toxicity; however, modifying GSH content of the cells did not have an effect. The results of this study, with two closely related salmonids, provided additional evidence for species-specific differences in sensitivity to Se which should be considered when setting thresholds and water quality guidelines. - Research Highlights: > We investigated species-specific sensitivity to Se in trout adrenocortical cells. > Selenite

  13. The x-ray time of flight method for investigation of ghosting in amorphous selenium-based flat panel medical x-ray imagers

    SciTech Connect (OSTI)

    Rau, A.W.; Bakueva, L.; Rowlands, J.A.

    2005-10-15

    Amorphous selenium (a-Se) based real-time flat-panel imagers (FPIs) are finding their way into the digital radiology department because they offer the practical advantages of digital x-ray imaging combined with an image quality that equals or outperforms that of conventional systems. The temporal imaging characteristics of FPIs can be affected by ghosting (i.e., radiation-induced changes of sensitivity) when the dose to the detector is high (e.g., portal imaging and mammography) or the images are acquired at a high frame rate (e.g., fluoroscopy). In this paper, the x-ray time-of-flight (TOF) method is introduced as a tool for the investigation of ghosting in a-Se photoconductor layers. The method consists of irradiating layers of a-Se with short x-ray pulses. From the current generated in the a-Se layer, ghosting is quantified and the ghosting parameters (charge carrier generation rate and carrier lifetimes and mobilities) are assessed. The x-ray TOF method is novel in that (1) x-ray sensitivity (S) and ghosting parameters can be measured simultaneously (2) the transport of both holes and electrons can be isolated, and (3) the method is applicable to the practical a-Se layer structure with blocking contacts used in FPIs. The x-ray TOF method was applied to an analysis of ghosting in a-Se photoconductor layers under portal imaging conditions, i.e., 1 mm thick a-Se layers, biased at 5 V/{mu}m, were irradiated using a 6 MV LINAC x-ray beam to a total dose (ghosting dose) of 30 Gy. The initial sensitivity (S{sub 0}) of the a-Se layers was 63{+-}2 nC cm{sup -2} cGy{sup -1}. It was found that S decreases to 30% of S{sub 0} after a ghosting dose of 5 Gy and to 21% after 30 Gy at which point no further change in S occurs. At an x-ray intensity of 22 Gy/s (instantaneous dose rate during a LINAC x-ray pulse), the charge carrier generation rate was 1.25{+-}0.1x10{sup 22} ehp m{sup -3} s{sup -1} and, to a first approximation, independent of the ghosting dose. However, both

  14. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    SciTech Connect (OSTI)

    Chen, Dazheng; Zhang, Chunfu Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-06-16

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  15. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  16. Synthesis and use of (perfluoroaryl) fluoro-aluminate anion

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    A trityl perfluorophenyl alumninate such as tris(2,2',2"-nonafluorobiphenyl)-fluoroaluminate (PBA.sup..crclbar.) and its role as a cocatalyst in metallocene-mediated olefin polymerization is disclosed. Gallium and indium analogs are also disclosed, as are analogs with different anyl groups or different numbers of flourine atoms thereon.

  17. Gallium composition dependence of crystallographic and thermoelectric properties in polycrystalline type-I Ba{sub 8}Ga{sub x}Si{sub 46-x} (nominal x=14-18) clathrates prepared by combining arc melting and spark plasma sintering methods

    SciTech Connect (OSTI)

    Anno, Hiroaki; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 ; Yamada, Hiroki; Nakabayashi, Takahiro; Hokazono, Masahiro; Shirataki, Ritsuko; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075

    2012-09-15

    The gallium composition dependence of crystallographic and thermoelectric properties in polycrystalline n-type Ba{sub 8}Ga{sub x}Si{sub 46-x} (nominal x=14-18) compounds with the type-I clathrate structure is presented. Samples were prepared by combining arc melting and spark plasma sintering methods. Powder x-ray diffraction, Rietveld analysis, scanning electron microscopy, and energy-dispersive x-ray spectroscopy show that the solubility limit of gallium in the type-I clathrate phase is close to x=15, which is slightly higher than that for a single crystal. The carrier concentration at room temperature decreases from 2 Multiplication-Sign 10{sup 21} cm{sup -3} to 4 Multiplication-Sign 10{sup 20} cm{sup -3} as the Ga content x increases. The Seebeck coefficient, the electrical conductivity, and the thermal conductivity vary systematically with the carrier concentration when the Ga content x varies. The effective mass (2.0m{sub 0}), the carrier mobility (10 cm{sup 2} V{sup -1} s{sup -1}), and the lattice thermal conductivity (1.1 W m{sup -1} K{sup -1}) are determined for the Ga content x=14.51. The dimensionless thermoelectric figure of merit ZT is about 0.55 at 900 K for the Ga content x=14.51. The calculation of ZT using the experimentally determined material parameters predicts ZT=0.8 (900 K) at the optimum carrier concentration of about 2 Multiplication-Sign 10{sup 20} cm{sup -3}. - Graphical abstract: The gallium composition dependence of crystallographic and thermoelectric properties is presented on polycrystalline n-type Ba{sub 8}Ga{sub x}Si{sub 46-x} with the type-I clathrate structure prepared by combining arc melting and spark plasma sintering methods. The thermoelectric figure of merit ZT reaches 0.55 at 900 K due to the increase in the Ga content (close to x=15), and a calculation predicts further improvement of ZT at the optimized carrier concentration. Highlights: Black-Right-Pointing-Pointer Crystallographic properties of Ba{sub 8}Ga{sub x}Si{sub 46

  18. Recent developments in high-efficiency PV cells

    SciTech Connect (OSTI)

    Deb, S.

    2000-05-22

    Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30{percent}) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP{sub 2}). The high-efficiency GaAs-based solar cells are being produced on a commercial scale, particularly for space applications. Efficiencies in the range of 18{percent} to 24{percent} have been achieved in traditional silicon-based devices fabricated from both multicrystalline and single-crystal materials. Major advances in efficiency have also been made on various thin-film solar cells based on amorphous silicon (aSi:H), copper gallium indium diselenide (CIGS), and cadmium telluride materials. This paper gives a brief overview of the recent progress in PV cell efficiencies based on these materials and devices.

  19. Superconductive silicon nanowires using gallium beam lithography.

    SciTech Connect (OSTI)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  20. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect (OSTI)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramn; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of ?111?-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100 reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  1. Enthalpy of formation of gallium nitride

    SciTech Connect (OSTI)

    Ranade, M.R.; Tessier, F.; Navrotsky, A.; Leppert, V.J.; Risbud, S.H.; DiSalvo, F.J.; Balkas, C.M.

    2000-05-04

    A major discrepancy in the literature concerning the enthalpy of formation of GaN has been resolved using oxidative oxide melt solution calorimetry. Four samples of differing nitrogen contents were measured by dropping them into molten 3Na{sub 2}O{center_dot}4MoO{sub 3} in a calorimeter at 975 K with oxygen gas bubbling through the solvent. The samples were characterized by X-ray diffraction, chemical analysis, transmission electron microscopy, particle size analysis, and BET measurements. The enthalpy of drop solution (kJ/g) varied approximately linearly with nitrogen content. Extrapolated to stoichiometric GaN, the data yield a value of {minus}156.8 {+-} 16.0 kJ/mol for the standard enthalpy of formation from the elements at 298 K. The relatively large error reflects the deviation of individual points from the straight line rather than uncertainties in each set of data for a given sample. This new directly measured enthalpy of formation is in excellent agreement with that obtained from the temperature dependence of the equilibrium pressure of nitrogen over GaN, {minus}157.7 kJ/mol, measured by Madar et al. and Karpinski and Porowski. This value of {minus}156.8 kJ/mol should replace the commonly tabulated value of {minus}110 kJ/mol determined by Hahn and Juza using combustion calorimetry on an uncharacterized sample over 50 years ago.

  2. Growth process for gallium nitride porous nanorods

    DOE Patents [OSTI]

    Wildeson, Isaac Harshman; Sands, Timothy David

    2015-03-24

    A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

  3. Thermophotovoltaic generators based on gallium antimonide

    SciTech Connect (OSTI)

    Khvostikov, V. P. Sorokina, S. V.; Potapovich, N. S.; Khvostikova, O. A.; Malievskaya, A. V.; Vlasov, A. S.; Shvarts, M. Z.; Timoshina, N. Kh.; Andreev, V. M.

    2010-02-15

    Designs of thermophotovoltaic (TPV) generators with infrared emitters heated by concentrated solar radiation are developed, fabricated, and tested. Emitters made of SiC, W, or Ta of various forms and sizes are studied. To the GaSb-based thermophotovoltaic cells, the efficiency of transformation of thermal radiation of W emitters was 19%. The features of operation of two variants of TPV generators, namely, of cylindrical and conical types, are considered. In a demonstration model of the TPV generator consisting of 12 photocells, the output electric power with conversion of the concentrated solar radiation was P = 3.8 W.

  4. Influence of different sulfur to selenium ratios on the structural and electronic properties of Cu(In,Ga)(S,Se){sub 2} thin films and solar cells formed by the stacked elemental layer process

    SciTech Connect (OSTI)

    Mueller, B. J.; Zimmermann, C.; Haug, V. Koehler, T.; Zweigart, S.; Hergert, F.; Herr, U.

    2014-11-07

    In this study, we investigate the effect of different elemental selenium to elemental sulfur ratios on the chalcopyrite phase formation in Cu(In,Ga)(S,Se){sub 2} thin films. The films are formed by the stacked elemental layer process. The structural and electronic properties of the thin films and solar cells are analyzed by means of scanning electron microscopy, glow discharge optical emission spectrometry, X-ray diffraction, X-ray fluorescence, Raman spectroscopy, spectral photoluminescence as well as current-voltage, and quantum efficiency measurements. The influence of different S/(S+Se) ratios on the anion incorporation and on the Ga/In distribution is investigated. We find a homogenous sulfur concentration profile inside the film from the top surface to the bottom. External quantum efficiency measurements show that the band edge of the solar cell device is shifted to shorter wavelength, which enhances the open-circuit voltages. The relative increase of the open-circuit voltage with S/(S+Se) ratio is lower than expected from the band gap energy trend, which is attributed to the presence of S-induced defects. We also observe a linear decrease of the short-circuit current density with increasing S/(S+Se) ratio which can be explained by a reduced absorption. Above a critical S/(S+Se) ratio of around 0.61, the fill factor drops drastically, which is accompanied by a strong series resistance increase which may be attributed to changes in the back contact or p-n junction properties.

  5. Chemical Routes to Colloidal Chalcogenide Nanosheets

    SciTech Connect (OSTI)

    Schaak, Raymond

    2015-02-19

    This project sought to develop new low-temperature synthetic pathways to intermetallic and chalcogenide nanostructures and powders, with an emphasis on systems that are relevant to advancing the synthesis, processing, and discovery of superconducting materials. The primary synthetic routes involved solution chemistry methods, and several fundamental synthetic challenges that underpinned the formation of these materials were identified and investigated. Methods for incorporating early transition metals and post transition metals into nanoscale and bulk crystals using low-temperature solution chemistry methods were developed and studied, leading to colloidal nanocrystals of elemental indium, manganese, and germanium, as well as nanocrystalline and bulk intermetallic compounds containing germanium, gallium, tin, indium, zinc, bismuth, and lithium. New chemical tools were developed to help target desired phases in complex binary intermetallic and metal chalcogenide systems that contain multiple stable phases, including direct synthesis methods and chemical routes that permit post-synthetic modification. Several phases that are metastable in bulk systems were targeted, synthesized, and characterized as nanocrystalline solids and bulk powders, including the L12-type intermetallic compounds Au3Fe, Au3Ni, and Au3Co, as well as wurtzite-type MnSe. Methods for accessing crystalline metal borides and carbides using direct solution chemistry methods were also developed, with an emphasis on Ni3B and Ni3C, which revealed useful correlations of composition and magnetic properties. Methods for scale-up and nanoparticle purification were explored, providing access to centimeter-scale pressed pellets of polyol-synthesized nanopowders and a bacteriophage-mediated method for separating impure nanoparticle mixtures into their components. Several advances were made in the synthesis of iron selenide and related superconducting materials, including the production of colloidal Fe

  6. Application of the bounds-analysis approach to arsenic and gallium antisite defects in gallium arsenide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wright, A. F.; Modine, N. A.

    2015-01-23

    The As antisite in GaAs (AsGa) has been the subject of numerous experimental and theoretical studies. Recent density-functional-theory (DFT) studies report results in good agreement with experimental data for the +2, +1, and 0 charge states of the stable EL2 structure, the 0 charge state of the metastable EL2* structure, and the activation energy to transform from EL2* to EL2 in the 0 charge state. However, these studies did not report results for EL2* in the -1 charge state. In this paper, we report new DFT results for the +2, +1, 0, and -1 charge states of AsGa, obtained usingmore » a semilocal exchange-correlation functional and interpreted using a bounds-analysis approach. In good agreement with experimental data, we find a -1/0 EL2* level 0.06 eV below the conduction-band edge and an activation energy of 0.05 eV to transform from EL2* to EL2 in the -1 charge state. While the Ga antisite in GaAs (GaAs) has not been studied as extensively as AsGa, experimental studies report three charge states (-2, -1, 0) and two levels (-2/-1, -1/0) close to the valence-band edge. Recent DFT studies report the same charge states, but the levels are found to be well-separated from the valence-band edge. To resolve this disagreement, we performed new DFT calculations for GaAs and interpreted them using a bounds analysis. The analysis identified the -1 and 0 charge states as hole states weakly bound to a highly-localized -2 charge state. Moreover, the -2/-1, -1/0 levels were found to be near the valence-band edge, in good agreement with the experimental data.« less

  7. Npn double heterostructure bipolar transistor with ingaasn base region

    DOE Patents [OSTI]

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  8. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Hfling, S.; Schneider, C.; Kamp, M.; Mika, A.; S?k, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  9. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  10. Interplay of light transmission and catalytic exchange current in photoelectrochemical systems

    SciTech Connect (OSTI)

    Fountaine, Katherine T.; Lewerenz, Hans J.; Atwater, Harry A.

    2014-10-27

    We develop an analytic current-voltage expression for a variable junction photoelectrochemical (PEC) cell and use it to investigate and illustrate the influence of the optical and electrical properties of catalysts on the optoelectronic performance of PEC devices. Specifically, the model enables a simple, yet accurate accounting of nanostructured catalyst optical and electrical properties through incorporation of an optical transmission factor and active catalytic area factor. We demonstrate the utility of this model via the output power characteristics of an exemplary dual tandem solar cell with indium gallium phosphide and indium gallium arsenide absorbers with varying rhodium catalyst nanoparticle loading. The approach highlights the importance of considering interactions between independently optimized components for optimal PEC device design.

  11. J/{psi} Production in Indium-Indium Collisions at 158 GeV/Nucleon

    SciTech Connect (OSTI)

    Arnaldi, R.; Colla, A.; Cortese, P.; Ferretti, A.; Oppedisano, C.; Scomparin, E.; Banicz, K.; Damjanovic, S.; Castor, J.; Devaux, A.; Fargeix, J.; Force, P.; Manso, F.; Chaurand, B.; Cicalo, C.; De Falco, A.; Floris, M.; Masoni, A.; Puddu, G.; Serci, S.

    2007-09-28

    The NA60 experiment studies muon pair production at the CERN Super Proton Synchrotron. In this Letter we report on a precision measurement of J/{psi} in In-In collisions. We have studied the J/{psi} centrality distribution, and we have compared it with the one expected if absorption in cold nuclear matter were the only active suppression mechanism. For collisions involving more than {approx}80 participant nucleons, we find that an extra suppression is present. This result is in qualitative agreement with previous Pb-Pb measurements by the NA50 experiment, but no theoretical explanation is presently able to coherently describe both results.

  12. {phi} Production in Proton-Nucleus and Indium-Indium Collisions at the CERN SPS

    SciTech Connect (OSTI)

    Floris, M.; Cicalo, C.; De Falco, A.; Masoni, A.; Puddu, G.; Serci, S.; Usai, G.; Arnaldi, R.; Colla, A.; Cortese, P.; Ferretti, A.; Oppedisano, C.; Scomparin, E.; Averbeck, R.; Drees, A.; Banicz, K.; Castor, J.; Devaux, A.; Force, P.; Manso, F.

    2006-04-11

    The quality of the dimuon measurements made by NA60, in proton-nucleus and heavy-ion collisions, is much better than that reached by previous experiments, such as NA38 and NA50. The most important improvement is due to the use of a radiation-tolerant silicon vertex telescope, placed immediately downstream of the target. This allows NA60 to do a high quality measurement of {phi} meson yields and pT distributions.This paper presents results obtained in p-Be, p-In and p-Pb collisions at 400 GeV, from data collected in 2002, and in In-In collisions at 158 AGeV, as a function of centrality, from the 2003 running period. In particular, we show that the inverse mT slope measured in In-In collisions, in the {phi} {yields} {mu}{mu} decay channel, increases with the number of nucleons participating in the collisions, rather than following a flat trend as seen in the NA50 data collected in the same decay channel but restricted to high pT values. We also show that our measurements seem to agree with the values previously measured by NA49, using {phi} {yields} KK decays, in Pb-Pb and other collision systems.

  13. Recycling Of Cis Photovoltaic Waste

    DOE Patents [OSTI]

    Drinkard, Jr., William F.; Long, Mark O.; Goozner; Robert E.

    1998-07-14

    A method for extracting and reclaiming metals from scrap CIS photovoltaic cells and associated photovoltaic manufacturing waste by leaching the waste with dilute nitric acid, skimming any plastic material from the top of the leaching solution, separating glass substrate from the leachate, electrolyzing the leachate to plate a copper and selenium metal mixture onto a first cathode, replacing the cathode with a second cathode, re-electrolyzing the leachate to plate cadmium onto the second cathode, separating the copper from selenium, and evaporating the depleted leachate to yield a zinc and indium containing solid.

  14. NREL: Photovoltaics Research - Testing and Analysis to Advance R&D

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Testing and Analysis to Advance R&D Get the Adobe Flash Player to see this video. Text Alternative NREL has capabilities and experts in measurements, characterization, reliability, engineering, scientific computing, and theory to support photovoltaic (PV) research and development (R&D) across a range of conversion technologies and scales. Conversion technologies include the primary areas of silicon, polycrystalline thin films (cadmium telluride [CdTe], copper indium gallium diselenide

  15. Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates

    DOE Patents [OSTI]

    Eser, Erten; Fields, Shannon

    2012-05-01

    A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

  16. PROJECT PROFILE: Case Western Reserve University (PVRD-SIPS)

    Broader source: Energy.gov [DOE]

    This project investigates the impact of surface modification of the transparent electrode in thin film copper indium gallium selenide (CIGS) solar cells on improving the reliability. The modification with a molecular surface modifier will limit chemical exposure of the cell to water and acetic acid from the breakdown of ethylene-vinyl-acetate (EVA) encapsulants. The modification is expected to double the lifetime of the cell.

  17. PROJECT PROFILE: Manufacturing and Reliability Science for CIGS

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Photovoltaics | Department of Energy Manufacturing and Reliability Science for CIGS Photovoltaics PROJECT PROFILE: Manufacturing and Reliability Science for CIGS Photovoltaics Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO Amount Awarded: $4,000,000 This project aims to overcome the largest challenges to investor confidence and long product lifetime in copper indium gallium selenide (CIGS): meta-stability,

  18. PROJECT PROFILE: Mechanically Stacked Hybrid Photovoltaic Tandems |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Mechanically Stacked Hybrid Photovoltaic Tandems PROJECT PROFILE: Mechanically Stacked Hybrid Photovoltaic Tandems Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO Amount Awarded: $999,999 Tandem cell architectures present a path toward higher module efficiencies over single junction designs. This project will develop a gallium indium phosphide (GaInP) on silicon mechanically stacked voltage-matched

  19. PROJECT PROFILE: Silicon-Based Tandem Solar Cells | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Silicon-Based Tandem Solar Cells PROJECT PROFILE: Silicon-Based Tandem Solar Cells Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO Amount Awarded: $1,500,000 The project will demonstrate bonded gallium indium phosphide (GaInP) on silicon tandem cells, evaluate the advantages and disadvantages of this method of forming higher-efficiency tandem cells, and compare two- and three-terminal device configurations. APPROACH In

  20. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  1. Summer 2011 Intern Project- Eric Ling | Center for Energy Efficient

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Eric Ling THERMOELECTRIC PROPERTIES OF DOPED InGaAs Eric Ling Physics and Mathamatics UC Santa Barbara Mentor: Borzoyeh Shojaei Faculty Advisor: Chris Pamlstrom Department: Electrical and Computer Engineering In recent history, thermeoelectrics have shown to be promising materials for energy conversion via wasted heat to electricity. One such material, indium gallium arsenide (InGaAs), may possess a high electrical conductivity term in the thermoelectric figure of merit when doped

  2. Building America Case Study: Mockup Small-Diameter Air Distribution System (Fact Sheet), NREL (National Renewable Energy Laboratory)

    Office of Environmental Management (EM)

    Bright Lights and Even Brighter Ideas Bright Lights and Even Brighter Ideas July 3, 2013 - 2:04pm Addthis Kim Kisslinger, a researcher at Brookhaven Lab's Center for Functional Nanomaterials seen here with a focused-ion beam instrument, reduced the indium gallium nitride (InGaN) samples to a thickness of just 20 nanometers to prepare them for electron microscopy. | Photo courtesy of Brookhaven National Laboratory. Kim Kisslinger, a researcher at Brookhaven Lab's Center for Functional

  3. Phosphors containing boron and metals of Group IIIA and IIIB

    DOE Patents [OSTI]

    Setlur, Anant Achyut; Srivastava, Alok Mani; Comanzo, Holly Ann; Manivannan, Venkatesan

    2006-10-31

    A phosphor comprises: (a) at least a first metal selected from the group consisting of yttrium and elements of lanthanide series other than europium; (b) at least a second metal selected from the group consisting of aluminum, gallium, indium, and scandium; (c) boron; and (d) europium. The phosphor is used in light source that comprises a UV radiation source to convert UV radiation to visible light.

  4. NREL Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01

    Many scientists once believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. However, researchers at the National Renewable Energy Laboratory (NREL) thought differently, and they employed GaInP in a material combination that allowed the multijunction cell to flourish. The multijunction cell is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic products.

  5. Vehicle Technologies Office Merit Review 2016: Novel Chemistry: Lithium Selenium and Selenium Sulfur Couple

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory (ANL) at the 2016 DOE Vehicle Technologies Office and Hydrogen and Fuel Cells Program Annual Merit Review and Peer Evaluation Meeting about Batteries

  6. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of crystalline GaN growth in ESG Results and Accomplishments HRXRD vs reference SEM surface view 0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 Deposition rate ...

  7. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    achieving GaN bulk growth without the limitations of tradi- tional crystal growth methods. ... MEMC technology transfer and marketing staff are coordinating with the research team to ...

  8. Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

    SciTech Connect (OSTI)

    Chen, J. C. H. Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Das Gupta, K.; Sfigakis, F.; Ritchie, D. A.; Trunov, K.; Wieck, A. D.; Reuter, D.

    2015-05-04

    We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al{sub 0.34}Ga{sub 0.66}As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.

  9. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect (OSTI)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

  10. Size effects in the thermal conductivity of gallium oxide (β...

    Office of Scientific and Technical Information (OSTI)

    via this technique (8.8 3.4 W msup -1 Ksup -1) and large mean free paths compared ... with different metal transducers (Al, Au, and Au with a Ti wettingmore layer), we ...

  11. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ways to exploit the novel properties that result are frontier areas of today's solid-state physics and materials science. However, before exploring and exploiting comes making....

  12. Convective Turbulence in Liquid Gallium and Sodium | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dynamics of the velocity field The figure displays streamlines of the two-dimensional skin friction field which was obtained right at the heated bottom plate of a cylindrical...

  13. Process for growing epitaxial gallium nitride and composite wafers

    DOE Patents [OSTI]

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  14. Review of using gallium nitride for ionizing radiation detection

    SciTech Connect (OSTI)

    Wang, Jinghui; Mulligan, Padhraic; Cao, Lei R.; Brillson, Leonard

    2015-09-15

    With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by {sup 14}N(n,p){sup 14}C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

  15. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fabrication of initial 405 nm semipolar LEDs is based on high-IQE structures identified by the experimental data. View the Presentation 2014 BTO Peer Review Presentation - ...

  16. Review of using gallium nitride for ionizing radiation detection...

    Office of Scientific and Technical Information (OSTI)

    Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, USA, Department of Radiology, Stanford University, ...

  17. High-efficiency solar cell and method for fabrication

    DOE Patents [OSTI]

    Hou, H.Q.; Reinhardt, K.C.

    1999-08-31

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

  18. High-efficiency solar cell and method for fabrication

    DOE Patents [OSTI]

    Hou, Hong Q.; Reinhardt, Kitt C.

    1999-01-01

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

  19. Enhanced optical properties due to indium incorporation in zinc...

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 22489274 Resource Type: Journal Article Resource Relation: Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 2; Other Information: (c) ...

  20. Indium Growth and Island Height Control on Si Submonolayer Phases

    SciTech Connect (OSTI)

    Chen, Jizhou

    2009-05-09

    Nanotechnology refers any technique that involves about object with nanoscale (10{sup -9} m) or even smaller. It has become more and more important in recently years and has changed our world dramatically. Most of modern electronic devices today should thanks to the miniaturizing driven by development of nanotechnology. Recent years, more and more governments are investing huge amount of money in research related to nanotechnology. There are two major reasons that nanostructure is so fascinate. The first one is the miniaturizing. It is obvious that if we can make products smaller without losing the features, we can save the cost and increase the performance dramatically. For an example, the first computer in the world, ENIAC, which occupied several rooms, is less powerful than the cheapest calculator today. Today's chips with sizes of less than half an inch contain millions of basic units. All these should thank to the development of nanotechnology. The other reason is that when we come to nanoscale, there are many new effects due to the quantum effect which can't be found in large systems. For an example, quantum dots (QDs) are systems which sizes are below 1{micro}m(10{sup -6}m) and restricted in three dimensions. There are many interesting quantum effects in QDs, including discrete energy levels, and interdot coupling. Due to these properties and their small sizes, QDs have varies potential applications such as quantum computing, probe, light emitting device, solar cells, and laser. To meet the requirement of the nanoelectrical applications, the QDs must be grown highly uniformly because their property is highly dependent on their sizes. The major methods to grow uniform QDs include epitaxial, and lithograph. Lithography is a process to make patterns on a thin film by selectively removing certain parts of the film. Using this method, people have good control over size, location and spacing of QDs. For an example, the Extreme ultraviolet lithography (EUVL) have a wave length of 13.4nm so it can curve on the surface of an sample to make structure as small as the order of 10nm. however, lithograph usually causes permanent damages to the surface and in many cases the QDs are damaged during the lithograph and therefore result in high percentage of defects. Quantum size effect has attracted more and more interests in surface science due to many of its effects. One of its effects is the height preference in film growing and the resulting possibility of uniformly sized self-assemble nanostructure. The experiment of Pb islands on In 4x1 phase shows that both the height and the width can be controlled by proper growth conditions, which expands the growth dimensions from 1 to 2. This discover leads us to study the In/Pb interface. In Ch.3, we found that the Pb islands growing on In 4x1-Si(111) surface which have uniform height due to QSE and uniform width due to the constriction of In 4x1 lattice have unexpected stability. These islands are stable in even RT, unlike usual nanostructures on Pb/Si surface which are stable only at low temperature. Since similar structures are usually grown at low temperature, this discovery makes the grown structures closer to technological applications. It also shows the unusual of In/Pb interface. Then we studied the In islands grown on Pb-{alpha}-{radical}3x{radical}3-Si(111) phase in Ch.4. These islands have fcc structure in the first few layers, and then convert to bct structure. The In fcc islands have sharp height preference due to QSE like Pb islands. However, the preferred height is different (7 layer for Pb on Si 7x7 and 4 layer for Pb on In 4x1), due to the difference of interface. The In islands structure prefers to be bct than fcc with coverage increase. It is quantitatively supported by first-principle calculation. Unexpectedly, the In islands grown on various of In interfaces didn't show QSE effects and phase transition from fcc and bct structures as on the Pb-{alpha} interface (Ch.6). In g(s) curve there is no clear oscillations in the g(s) curve as the In on Pb-{alpha} phase. This

  1. Indium Phosphide Nanocrystals Formed in Silica by Sequential...

    Office of Scientific and Technical Information (OSTI)

    Affiliations Fisk University, Nashville, TN Northeast Normal University, Changchun, China ORNL North Carolina Central University, Durham Alabama A&M University, Normal...

  2. Spectroscopic properties of colloidal indium phosphide quantum wires

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Wang, Fudong; Yu, Heng; Li, Jingbo; Hang, Qingling; Zemlyanov, Dmitry; Gibbons, Patrick C.; Wang, Lin-Wang; Janes, David B.; Buhro, William E.

    2008-07-11

    Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photo-oxidation, without a significant influence on quantum-wire photoluminescence. However, photo-oxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation, and that colloidal quantum wires have intrinsically low photoluminescence efficiencies.

  3. Preparation and immunoreactivity of high specific activity indium-111-DTPA labeled monoclonal antibody (MoAb) using ultrapure indium-111

    SciTech Connect (OSTI)

    Zoghbi, S.S.; Neumann, R.D.; Gottschalk, A.

    1986-10-01

    The preparation of high-specific activity /sup 111/In-DTPA-MoAb without increasing the number of DTPA molecules per Ab was investigated. Instant thin layer chromatography was used to assay the relationship between labeling efficiencies and specific activities. With ultrapurified /sup 111/In, the specific activity of the radiolabeled MoAb approached the expected theoretic maximum of 100 muCi/microgram. The bioactivity of such high-specific activity preparation showed no degradation as measured by in vitro cell binding assay.

  4. Multi-spectral optical absorption in substrate-free nanowire arrays

    SciTech Connect (OSTI)

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray; Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet

    2014-09-22

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  5. NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell (Fact Sheet), Highlights in Research & Development, NREL (National Renewable Energy Laboratory)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. A joint effort between the National Renewable Energy Laboratory (NREL) and the Swiss Center for Electronics and Microtechnology (CSEM) has resulted in a novel tandem solar cell that operates at 29.8% conversion efficiency under 1-sun conditions. The new solar cell technology combines NREL's 1.8-eV gallium indium phosphide (GaInP) technology as a top cell and

  6. NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium

  7. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

    SciTech Connect (OSTI)

    Gelinck, G. H.; Breemen, A. J. J. M. van; Cobb, B.

    2015-03-02

    Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

  8. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  9. NREL Scientists Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01

    Before 1984, many scientists believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. One researcher at the Solar Energy Research Institute (SERI) thought differently. His name was Jerry Olson, and his innovative thinking changed solar history. Olson identified a material combination that allowed the multijunction cell to flourish. It is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic (CPV) products.

  10. The state of the art of thin-film photovoltaics

    SciTech Connect (OSTI)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  11. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

    2006-04-04

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  12. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

    2004-07-13

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  13. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    SciTech Connect (OSTI)

    Li, Qin; Song, Zhong Xiao; Ma, Fei E-mail: liyhemail@gmail.com; Li, Yan Huai E-mail: liyhemail@gmail.com; Xu, Ke Wei

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  14. Commercialization of High Efficiency Low Cost CIGS Technology Based on Electroplating: Final Technical Progress Report, 28 September 2007 - 30 June 2009

    SciTech Connect (OSTI)

    Basol, B.

    2010-08-01

    This report describes SoloPower's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. The project focused on SoloPower's electrodeposition-based copper indium gallium (di)selenide (CIGS) technology. Under this subcontract, SoloPower improved the quality of its flexible metal substrates, increased the size of its solar cells from 0.5 cm2 to 120 cm2, increased the small-area cell efficiencies from near 11% to near 14%, demonstrated large-area cells, and developed a module manufacturing process.

  15. Grain Accumulation of Selenium Species in Rice (Oryza sativa L.)

    SciTech Connect (OSTI)

    Carey, Anne-Marie; Scheckel, Kirk G.; Lombi, Enzo; Newville, Matt; Choi, Yongseong; Norton, Gareth J.; Price, Adam H.; Meharg, Andrew A.

    2012-09-05

    Efficient Se biofortification programs require a thorough understanding of the accumulation and distribution of Se species within the rice grain. Therefore, the translocation of Se species to the filling grain and their spatial unloading were investigated. Se species were supplied via cut flag leaves of intact plants and excised panicle stems subjected to a {+-} stem-girdling treatment during grain fill. Total Se concentrations in the flag leaves and grain were quantified by inductively coupled plasma mass spectrometry. Spatial accumulation was investigated using synchrotron X-ray fluorescence microtomography. Selenomethionine (SeMet) and selenomethylcysteine (SeMeSeCys) were transported to the grain more efficiently than selenite and selenate. SeMet and SeMeSeCys were translocated exclusively via the phloem, while inorganic Se was transported via both the phloem and xylem. For SeMet- and SeMeSeCys-fed grain, Se dispersed throughout the external grain layers and into the endosperm and, for SeMeSeCys, into the embryo. Selenite was retained at the point of grain entry. These results demonstrate that the organic Se species SeMet and SeMeSeCys are rapidly loaded into the phloem and transported to the grain far more efficiently than inorganic species. Organic Se species are distributed more readily, and extensively, throughout the grain than selenite.

  16. Fractionation of elements during copper smelting

    SciTech Connect (OSTI)

    Germani, M.S.; Zoller, W.H.; Small, M.; Moyers, J.L.

    1981-03-01

    A recent study of the elemental composition of particulate material collected from the plumes of five copper smelters in southeastern Arizona indicated that arsenic, lead, selenium, cadmium, zinc, tungsten, indium, and other chalcophilic elements are highly enriched in the plume materials relative to the background aerosol. Enrichments are due to the volatilization of these elements during copper smelting. Significant differences in the elemental compositions of plumes from the various smelters appear to be due to differences in the feed material, smelting conditions, and equipment use by the smelters. (3 graphs, 13 references, 7 tables)

  17. Structural and morphological evolution of gallium nitride nanorods grown by chemical beam epitaxy

    SciTech Connect (OSTI)

    Kuo, Shou-Yi; Lai, Fang-I; Chen, Wei-Chun; Hsiao, Chien-Nan; Lin, Woei-Tyng

    2009-07-15

    The morphological and structural evolution is presented for GaN nanorods grown by chemical beam epitaxy on (0001) Al{sub 2}O{sub 3} substrates. Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and temperature-dependent photoluminescence measurements. While increasing the growth temperature and the flow rate of radio-frequency nitrogen radical, the three-dimensional growth mode will be enhanced to form one-dimensional nanostructures. The high density of well-aligned nanorods with a diameter of 30-50 nm formed uniformly over the entire sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the self-assembled GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. Particularly, the ''S-shape'' behavior with localization of {approx}10 meV observed in the temperature-dependent photoluminescence might be ascribed to the fluctuation in crystallographic defects and composition.

  18. Measurement of piezoelectric constants of lanthanum-gallium tantalate crystal by X-ray diffraction methods

    SciTech Connect (OSTI)

    Blagov, A. E.; Marchenkov, N. V. Pisarevsky, Yu. V.; Prosekov, P. A.; Kovalchuk, M. V.

    2013-01-15

    A method for measuring piezoelectric constants of crystals of intermediate systems by X-ray quasi-multiple-wave diffraction is proposed and implemented. This technique makes it possible to determine the piezoelectric coefficient by measuring variations in the lattice parameter under an external electric field. This method has been approved, its potential is evaluated, and a comparison with high-resolution X-ray diffraction data is performed.

  19. Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride

    SciTech Connect (OSTI)

    Khurgin, Jacob B.; Bajaj, Sanyam; Rajan, Siddharth

    2015-12-28

    Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, the saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.

  20. Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy and XPS

    SciTech Connect (OSTI)

    Windisch, Charles F.; Henager, Charles H.; Engelhard, Mark H.; Bennett, Wendy D.

    2009-12-01

    Laser Raman spectroscopy and x-ray photoelectron spectroscopy were used to study the evolution of composition of oxide films in the presence of zirconia coatings on miniature HT-9 alloy specimens subjected to elevated temperature in air. The experiments expanded on previous efforts to develop a quick-screening technique for candidate alloys for cladding materials (HT-9) and actinide-based mixed oxide fuel mixtures (represented by the zirconia coating) by investigating the effect of both coating composition and alloy pretreatment conditions on the high temperature reactions. In particular, the presence of the element Ga (a potential impurity in mixed oxide fuel) in the initial zirconia coating was found to accelerate the rate of oxide growth relative to that of yttria-stabilized zirconia studied previously. In addition, HT-9 samples that were subjected to different thermal pretreatments gave different results. The results suggest that the presence of Ga in a mixed oxide fuel will enhance the corrosion of HT-9 cladding under the conditions of this study, although the extent of enhancement is influenced by thermal pretreatment of the cladding material. The results also demonstrate the need to combine Raman spectroscopy with other techniques, particularly photoelectron spectroscopy, for optimizing composition and/or fabrication conditions of both cladding and oxide fuels for advanced nuclear reactors.

  1. SAGE: Solar Neutrino Data from SAGE, the Russian-American Gallium Solar Neutrino Experiment

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    SAGE Collaboration

    SAGE is a solar neutrino experiment based on the reaction 71Ga + n goes to 71Ge + e-. The 71Ge atoms are chemically extracted from a 50-metric ton target of Ga metal and concentrated in a sample of germane gas mixed with xenon. The atoms are then individually counted by observing their decay back to 71Ga in a small proportional counter. The distinguishing feature of the experiment is its ability to detect the low-energy neutrinos from proton-proton fusion. These neutrinos, which are made in the primary reaction that provides the Sun's energy, are the major component of the solar neutrino flux and have not been observed in any other way. To shield the experiment from cosmic rays, it is located deep underground in a specially built facility at the Baksan Neutrino Observatory in the northern Caucasus mountains of Russia. Nearly 100 measurements of the solar neutrino flux have been made during 1990-2000, and their combined result is a neutrino capture rate that is well below the prediction of the Standard Solar Model. The significant suppression of the solar neutrino flux that SAGE and other solar neutrino experiments have observed gives a strong indication for the existence of neutrino oscillations. [copied from the SAGE homepage at http://ewi.npl.washington.edu/SAGE/SAGE.html

  2. Application of the bounds-analysis approach to arsenic and gallium...

    Office of Scientific and Technical Information (OSTI)

    Date: 2015-01-01 OSTI Identifier: 1235253 Report Number(s): SAND2014-17327J Journal ID: ISSN 1098-0121; PRBMDO; 537237 GrantContract Number: AC04-94AL85000 Type: Accepted...

  3. Lateral damage in graphene carved by high energy focused gallium ion beams

    SciTech Connect (OSTI)

    Liao, Zhongquan; Zhang, Tao; Jordan, Rainer; Gall, Martin; Rosenkranz, Rüdiger; Dianat, Arezoo; Cuniberti, Gianaurelio; and others

    2015-07-06

    Raman mapping is performed to study the lateral damage in supported monolayer graphene carved by 30 keV focused Ga{sup +} beams. The evolution of the lateral damage is tracked based on the profiles of the intensity ratio between the D (1341 cm{sup −1}) and G (1582 cm{sup −1}) peaks (I{sub D}/I{sub G}) of the Raman spectra. The I{sub D}/I{sub G} profile clearly reveals the transition from stage 2 disorder into stage 1 disorder in graphene along the direction away from the carved area. The critical lateral damage distance spans from <1 μm up to more than 30 μm in the experiment, depending on the parameters used for carving the graphene. The wide damage in the lateral direction is attributed to the deleterious tail of unfocused ions in the ion beam probe. The study raises the attention on potential sample damage during direct patterning of graphene nanostructures using the focused ion beam technique. Minimizing the total carving time is recommended to mitigate the lateral damage.

  4. Calculation of infrared plasma reflection spectra of inhomogeneously doped P-type gallium arsenide

    SciTech Connect (OSTI)

    CHEN Wei-xi; LI Guo-hua; NIU Jin-zhen; GUO Chang-zhi

    1982-01-01

    The influence of the surface concentration and concentration profile of free carriers, the layer thickness and free carrier concentration of the homogeneous substrate on the infrared plasma reflection spectra of inhomogeneously doped P-type GaAs layers is analyzed by computer solutions of differential equations for the optical admittance. Computed spectra are reported for four different profiles and several substrate concentrations. Methods for evaluation of the measured reflection spectra and the limitation of this technique are discussed.

  5. Sandia Demonstrated First-Time, Single-Mode Lasing in Gallium...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation Energy Consortiums Engine Combustion Facilities Algae Testbed Battery Abuse ... in George's work is an important step toward all nanowire-laser-based applications. ...

  6. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  7. The Russian-American Gallium Experiment (SAGE) Cr Neutrino Source Measurement

    SciTech Connect (OSTI)

    Abdurashitov, J.; Gavrin, V.; Girin, S.; Gorbachev, V.; Ibragimova, T.; Kalikhov, A.; Khairnasov, N.; Knodel, T.; Kornoukhov, V.; Mirmov, I.; Shikhin, A.; Veretenkin, E.; Vermul, V.; Yants, V.; Zatsepin, G.; Bowles, T.; Nico, J.; Teasdale, W.; Wark, D.; Cherry, M.; Karaulov, V.; Levitin, V.; Maev, V.; Nazarenko, P.; Shkolnik, V.; Skorikov, N.; Cleveland, B.; Daily, T.; Davis, R. Jr.; Lande, K.; Lee, C.; Wildenhain, P.; Khomyakov, Y.; Zvonarev, A.; Elliott, S.; Wilkerson, J.

    1996-12-01

    The solar neutrino capture rate measured by SAGE is well below that predicted by solar models. To check the overall experimental efficiency, we exposed 13tonnes of Ga metal to a reactor-produced 517kCi source of {sup 51}Cr. The ratio of the measured production rate to that predicted from the source activity is 0.95{plus_minus}0.11(stat)+0.05/{minus}0.08(syst). This agreement verifies that the experimental efficiency is measured correctly, establishes that there are no unknown systematic errors at the 10{percent} level, and provides considerable evidence for the reliability of the solar neutrino measurement. {copyright} {ital 1996 The American Physical Society.}

  8. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  9. Fluorescent lifetime measurements of rare-earth elements in gallium arsenide. Master's thesis

    SciTech Connect (OSTI)

    Topp, D.J.

    1990-12-01

    Lifetime measurements of the excited states of three GaAs semiconductors doped with the rare earth elements Erbium (Er), Praseodymium (Pr), and Thulium (Tm) has been studied using a pulsed nitrogen laser and germanium detector. The measurements were made with an experimental set up with a system response time of 0.34 microseconds. A 330 milliwatt nitrogen laser with a wavelength of 3370 angstroms was used to excite transitions of the rare earth elements.

  10. Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays

    SciTech Connect (OSTI)

    Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

    2002-01-30

    High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

  11. Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

    SciTech Connect (OSTI)

    Kim, Jae-Sung; Xing Piao, Ming; Jang, Ho-Kyun; Kim, Gyu-Tae; Joo, Min-Kyu; Ahn, Seung-Eon; Choi, Yong-Hee

    2014-03-21

    Various plasma treatment effects such as oxygen (O{sub 2}), nitrogen (N{sub 2}), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O{sub 2} and N{sub 2} plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

  12. ION PUMP

    DOE Patents [OSTI]

    Milleron, N.

    1961-01-01

    An ion pump and pumping method are given for low vacuum pressures in which gases introduced into a pumping cavity are ionized and thereafter directed and accelerated into a quantity of liquid gettering metal where they are absorbed. In the preferred embodiment the metal is disposed as a liquid pool upon one electrode of a Phillips ion gauge type pump. Means are provided for continuously and remotely withdrawing and degassing the gettering metal. The liquid gettering metal may be heated if desired, although various combinations of gallium, indium, tin, bismuth, and lead, the preferred metals, have very low melting points. A background pressure of evaporated gettering metal may be provided by means of a resistance heated refractory metal wick protruding from the surface of the pcol of gettering metal.

  13. Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Sooheyong; Williams, G. Jackson; Campana, Maria I.; Walko, Donald A.; Landahl, Eric C.

    2016-01-11

    Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Finally, using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acousticmore » oscillations at frequencies of several GHz.« less

  14. Physics-Based Compact Model for CIGS and CdTe Solar Cells: From Voltage-Dependent Carrier Collection to Light-Enhanced Reverse Breakdown: Preprint

    SciTech Connect (OSTI)

    Sun, Xingshu; Alam, Muhammad Ashraful; Raguse, John; Garris, Rebekah; Deline, Chris; Silverman, Timothy

    2015-10-15

    In this paper, we develop a physics-based compact model for copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe) heterojunction solar cells that attributes the failure of superposition to voltage-dependent carrier collection in the absorber layer, and interprets light-enhanced reverse breakdown as a consequence of tunneling-assisted Poole-Frenkel conduction. The temperature dependence of the model is validated against both simulation and experimental data for the entire range of bias conditions. The model can be used to characterize device parameters, optimize new designs, and most importantly, predict performance and reliability of solar panels including the effects of self-heating and reverse breakdown due to partial-shading degradation.

  15. I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

    DOE Patents [OSTI]

    Chen, Wen S.; Stewart, John M.

    1992-01-07

    A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

  16. Printed Module Interconnects

    SciTech Connect (OSTI)

    Stockert, Talysa R.; Fields, Jeremy D.; Pach, Gregory F.; Mauger, Scott A.; van Hest, Maikel F. A. M.

    2015-06-14

    Monolithic interconnects in photovoltaic modules connect adjacent cells in series, and are typically formed sequentially involving multiple deposition and scribing steps. Interconnect widths of 500 um every 10 mm result in 5% dead area, which does not contribute to power generation in an interconnected solar panel. This work expands on previous work that introduced an alternative interconnection method capable of producing interconnect widths less than 100 um. The interconnect is added to the module in a single step after deposition of the photovoltaic stack, eliminating the need for scribe alignment. This alternative method can be used for all types of thin film photovoltaic modules. Voltage addition with copper-indium-gallium-diselenide (CIGS) solar cells using a 2-scribe printed interconnect approach is demonstrated. Additionally, interconnect widths of 250 um are shown.

  17. VACUUM SEALING MEANS FOR LOW VACUUM PRESSURES

    DOE Patents [OSTI]

    Milleron, N.

    1962-06-12

    S>A vacuum seal is designed in which the surface tension of a thin layer of liquid metal of low vapor pressure cooperates with adjacent surfaces to preclude passages of gases across pressure differentials as low as 10/sup -8/ mm Hg. Mating contiguous surfaces composed of copper, brass, stainless steel, nickel, molybdenum, tungsten, tantalum, glass, quartz, and/or synthetic mica are disposed to provide a maximum tolerance, D, expressed by 2 gamma /P/sub 1/, where gamma is the coefflcient of the surface tension of the metal sealant selected in dynes/cm/sub 2/. Means for heating the surfaces remotely is provided where temperatures drop below about 250 deg C. A sealant consisting of an alloy of gallium, indium, and tin, among other combinations tabulated, is disposed therebetween after treating the surfaces to improve wettability, as by ultrasonic vibrations, the surfaces and sealants being selected according to the anticipated experimental conditions of use. (AEC)

  18. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bailie, Colin D.; Christoforo, M. Greyson; Mailoa, Jonathan P.; Bowring, Andrea R.; Unger, Eva L.; Nguyen, William H.; Burschka, Julian; Pellet, Norman; Lee, Jungwoo Z.; Grätzel, Michael; et al

    2014-12-23

    A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. Furthermore, this work paves the way for integrating perovskites into a low-costmore » and high-efficiency (>25%) tandem cell.« less

  19. Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

    SciTech Connect (OSTI)

    Jo, Jeong-Wan; Park, Sung Kyu E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon E-mail: skpark@cau.ac.kr

    2014-07-28

    In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

  20. Semiconductor Device Analysis on Personal Computers

    Energy Science and Technology Software Center (OSTI)

    1993-02-08

    PC-1D models the internal operation of bipolar semiconductor devices by solving for the concentrations and quasi-one-dimensional flow of electrons and holes resulting from either electrical or optical excitation. PC-1D uses the same detailed physical models incorporated in mainframe computer programs, yet runs efficiently on personal computers. PC-1D was originally developed with DOE funding to analyze solar cells. That continues to be its primary mode of usage, with registered copies in regular use at more thanmore » 100 locations worldwide. The program has been successfully applied to the analysis of silicon, gallium-arsenide, and indium-phosphide solar cells. The program is also suitable for modeling bipolar transistors and diodes, including heterojunction devices. Its easy-to-use graphical interface makes it useful as a teaching tool as well.« less

  1. Origin of major donor states in In–Ga–Zn oxide

    SciTech Connect (OSTI)

    Nakashima, Motoki; Oota, Masashi; Ishihara, Noritaka; Nonaka, Yusuke; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi

    2014-12-07

    To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (V{sub O}), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of V{sub O} sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of V{sub O} and H in crystalline InGaO{sub 3}(ZnO){sub m} (m = 1). The results indicate that when H is trapped in V{sub O}, a stable complex is created that serves as a shallow-level donor.

  2. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    SciTech Connect (OSTI)

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M.; Tang, K.; Ahn, J.; McIntyre, P. C.

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  3. PROJECT PROFILE: From Modules to Atoms: Increasing Reliability/Stability of Commercially Relevant Photovoltaic Technologies

    Broader source: Energy.gov [DOE]

    While there are statistical studies and macroscopic descriptions of module-level degradation, there is a lack of understanding of the structural, chemical, and electrical properties at the microscopic scale of how these processes occur and how to reduce or eliminate them. The project will study reliability-related defects in major photovoltaic (PV) technologies that include silicon (Si), cadmium telluride (CdTe), and copper indium gallium selenide (CIGS). Researchers will use imaging and microscopy characterization tools along with multi-physics modeling to derive the causes of power-limiting defects that are responsible for potential-induced degradation in Si, metastability and transient degradations in CdTe, and increased degradation due to reverse-bias breakdown in CIGS.

  4. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    SciTech Connect (OSTI)

    Bailie, Colin D.; Christoforo, M. Greyson; Mailoa, Jonathan P.; Bowring, Andrea R.; Unger, Eva L.; Nguyen, William H.; Burschka, Julian; Pellet, Norman; Lee, Jungwoo Z.; Grätzel, Michael; Noufi, Rommel; Buonassisi, Tonio; Salleo, Alberto; McGehee, Michael D.

    2014-12-23

    A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. Furthermore, this work paves the way for integrating perovskites into a low-cost and high-efficiency (>25%) tandem cell.

  5. NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1991--31 July 1992

    SciTech Connect (OSTI)

    Not Available

    1992-08-01

    This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help people keep abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous silicon research; polycrystalline thin films (including copper indium diselenide, cadmium telluride, and thin-film silicon); crystalline materials and advanced concepts (including silicon, gallium arsenide, and other group III-V materials); and PV manufacturing technology development (which may include manufacturing information for various types of PV materials).

  6. Reducing the In2O3(111) Surface Results in Ordered Indium Adatoms

    SciTech Connect (OSTI)

    Wagner, Margareta; Seiler, Steffen; Meyer, Bernd; Boatner, Lynn A; Schmid, M.; Diebold, U.

    2014-01-01

    The In2O3(111) surface can be transformed from an oxidized bulk termination to one that is covered by single In adatoms. As each adatom sits at one specific site within the surface unit cell they form a well-ordered (1 1) superstructure. Annealing at 500 C in O2 or in ultrahigh vacuum results in a fully reversible conversion between these two surface terminations; this transformation and intermediate stages were followed with Scanning Tunneling Microscopy (STM). Formation of this novel surface structure under reducing conditions is corroborated by Density Functional Theory (DFT). The reduced adatom-covered and the oxidized In2O3(111) surfaces are expected to exhibit different chemical and electronic properties, which can easily be exploited by the facile and reversible switching between the two terminations.

  7. Advanced materials for solid oxide fuel cells: Hafnium-Praseodymium-Indium Oxide System

    SciTech Connect (OSTI)

    Bates, J.L.; Griffin, C.W.; Weber, W.J.

    1988-06-01

    The HfO/sub 2/-PrO/sub 1.83/-In/sub 2/O/sub 3/ system has been studied at the Pacific Northwest Laboratory to develop alternative, highly electrically conducting oxides as electrode and interconnection materials for solid oxide fuel cells. A coprecipitation process was developed for synthesizing single-phase, mixed oxide powders necessary to fabricate powders and dense oxides. A ternary phase diagram was developed, and the phases and structures were related to electrical transport properties. Two new phases, an orthorhombic PrInO/sub 3/ and a rhombohedral Hf/sub 2/In/sub 2/O/sub 7/ phase, were identified. The highest electronic conductivity is related to the presence of a bcc, In/sub 2/O/sub 3/ solid solution (ss) containing HfO/sub 2/ and PrO/sub 1.83/. Compositions containing more than 35 mol % of the In/sub 2/O/sub 3/ ss have electrical conductivities greater than 10/sup /minus/1/ (ohm-cm)/sup /minus/1/, and the two or three phase structures that contain this phase appear to exhibit mixed electronic-ionic conduction. The high electrical conductivities and structures similar to the Y/sub 2/O/sub 3/-stabilized ZrO/sub 2/(HfO/sub 2/) electrolyte give these oxides potential for use as cathodes in solid oxide fuel cells. 21 refs.

  8. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1987-01-01

    A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  9. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

    DOE Patents [OSTI]

    Ciszek, T.F.

    1984-11-29

    A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  10. Atomic structure, energetics, dynamics, and manipulation of topological solitons in indium chains on Si(111) surfaces

    SciTech Connect (OSTI)

    Zhang, Hui; Choi, Jin-Ho; Xu, Yang; Wang, Xiuxia; Zhai, Xiaofang; Wang, Bing; Zeng, Changgan; Zeng, Changgan; Cho, Jun-Hyung; Cho, Jun-Hyung; Zhang, Zhenyu; Hou, J. G.

    2011-01-01

    Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variabletemperature measurements of the soliton population allow us to determine the soliton formation energy to be 60 meV, smaller than one half of the band gap of 200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field enhanced soliton dynamics, and the feasibility of aggregating solitons into soliton polymers.

  11. Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

    SciTech Connect (OSTI)

    Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

    2011-04-15

    In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

  12. Lithium inclusion in indium metal-organic frameworks showing increased surface area and hydrogen adsorption

    SciTech Connect (OSTI)

    Bosch, Mathieu; Zhang, Muwei; Feng, Dawei; Yuan, Shuai; Wang, Xuan; Chen, Ying-Pin; Zhou, Hong-Cai

    2014-12-01

    Investigation of counterion exchange in two anionic In-Metal-Organic Frameworks (In-MOFs) showed that partial replacement of disordered ammonium cations was achieved through the pre-synthetic addition of LiOH to the reaction mixture. This resulted in a surface area increase of over 1600% in (Li [In(1,3 − BDC){sub 2}]){sub n} and enhancement of the H{sub 2} uptake of approximately 275% at 80 000 Pa at 77 K. This method resulted in frameworks with permanent lithium content after repeated solvent exchange as confirmed by inductively coupled plasma mass spectrometry. Lithium counterion replacement appears to increase porosity after activation through replacement of bulkier, softer counterions and demonstrates tuning of pore size and properties in MOFs.

  13. High hole concentration in p-type AlGaN by indium-surfactant...

    Office of Scientific and Technical Information (OSTI)

    School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 ... Country of input: International Atomic Energy Agency (IAEA) Country of Publication: ...

  14. Environmental stability of high-mobility indium-oxide based transparent electrodes

    SciTech Connect (OSTI)

    Tohsophon, Thanaporn; Dabirian, Ali; De Wolf, Stefaan; Morales-Masis, Monica Ballif, Christophe

    2015-11-01

    Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In{sub 2}O{sub 3} (ITO), H-doped In{sub 2}O{sub 3} (IO:H), and Zn-doped In{sub 2}O{sub 3} (IZO) electrodes under damp heat (DH) conditions (85 °C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (R{sub s}) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% R{sub s} degradation, due to losses in electron Hall mobility (μ{sub Hall}). We propose that this degradation results from chemisorbed OH- or H{sub 2}O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μ{sub Hall} strongly degrades during DH, the optical mobility (μ{sub optical}) remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

  15. Ion implantation and dynamic recovery of tin-doped indium oxide films

    SciTech Connect (OSTI)

    Shigesato, Yuzo; Paine, D.C.; Haynes, T.E.

    1993-09-01

    The effect of O{sup +} on implantation on the electronic (carrier density, mobility), resistivity and microstructural properties of thin film Sn-doped In{sub 2}O{sub 3} (ITO) was studied. Both polycrystalline (c-) and amorphous (a-) ITO thin films, 200 nm thick, were implanted at substrate temperatures ranging from {minus}196 to 300{degrees} C with 80 keV O{sup +} at doses ranging from 0 to 4.0{times}10{sup 15} cm{sup {minus}2}. X-ray diffraction studies show that polycrystalline ITO remains crystalline even after implantation with 80 keV O{sup +} at {minus}196{degrees}C to a dose of 4.0{times}10{sup 15} cm{sup {minus}2} which suggests that dynamic recovery processes are active in ITO at this low temperature. Although the x-ray diffraction pattern of the polycrystalline ITO remains unchanged with implant dose, the electrical properties were seen to degrade when implanted to a dose of 1.0{times}10{sup 15}cm{sup {minus}2} below 200{degrees}C. In contrast, amorphous ITO films remains amorphous upon ion implantation and shows almost no degradation in resistivity when implanted below 16{degrees}C. The recrystallization temperature of amorphous ITO is about 150{degrees}C in the absence of ion implantation.

  16. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1996-12-03

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  17. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1997-03-04

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  18. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1996-01-01

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  19. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1997-01-01

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  20. Investigation of new approaches for InGaN growth with high indium...

    Office of Scientific and Technical Information (OSTI)

    issues of phase separation and high dislocation density in InGaN-based PIN solar cells. ... Language: English Subject: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; COMPARATIVE EVALUATIONS; ...

  1. Lifetime of PWR silver-indium-cadmium control rods. Final report

    SciTech Connect (OSTI)

    Sipush, P.J.; Woodcock, J.; Chickering, R.W.

    1986-03-01

    A hot cell examination was performed on selected rodlets of a lead rod cluster control assembly (RCCA) which had experienced eleven cycles of operation in Point Beach Unit 1. The principal purpose of the program was to evaluate the performance of RCCAs. The hot cell examination of the rodlets involved detailed visual inspections, profilometry, metallography, cladding chemistry, dosimetry, scanning electron microscopy, corrosion tests, microhardness tests, absorber density measurements, and cladding tensile tests. Wear scars and a hairline crack in the cladding were evaluated. The results of the examinations and analysis of WEPCO site photographs led to an estimate of the service life for RCCAs which are used in Westinghouse 14 x 14 fuel assemblies. Also, wear scar widths were correlated with wear scar depths. The correlation may be used to estimate wear scar depths based on site photographs of wear scars for 14 x 14 RCCAs. The results of the program may be used as guidelines for RCCAs for 15 x 15 and 17 x 17 Westinghouse fuel designs. 10 refs., 89 figs., 26 tabs.

  2. Observed damage during Argon gas cluster depth profiles of compound semiconductors

    SciTech Connect (OSTI)

    Barlow, Anders J. Portoles, Jose F.; Cumpson, Peter J.

    2014-08-07

    Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-? dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025?nm/min (3.95??10{sup ?2}?amu/atom in ion) for 6?keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

  3. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

  4. Chemistry and Properties of Complex Intermetallics from Metallic Fluxes

    SciTech Connect (OSTI)

    Kanatzidis, Mercouri G.

    2015-03-28

    This project investigated the reaction chemistry and synthesis of new intermetallic materials with complex compositions and structures using metallic fluxes as solvents. It was found that the metallic fluxes offer several key advantages in facilitating the formation and crystal growth of new materials. The fluxes mostly explored were liquid aluminum, gallium and indium. The main purpose of this project was to exploit the potential of metallic fluxes as high temperature solvent for materials discovery in the broad class of intermetallics. This work opened new paths to compound formation. We discovered many new Si (or Ge)-based compounds with novel structures, bonding and physicochemical properties. We created new insights about the reaction chemistry that is responsible for stabilizing the new materials. We also studied the structural and compositional relationships to understand their properties. We investigated the use of Group-13 metals Al, Ga and In as solvents and have generated a wide variety of new results including several new ternary and quaternary materials with fascinating structures and properties as well as new insights as to how these systems are stabilized in the fluxes. The project focused on reactions of metals from the rare earth element family in combination with transition metals with Si and Ge. For example molten gallium has serves both as a reactive and non-reactive solvent in the preparation and crystallization of intermetallics in the system RE/M/Ga/Ge(Si). Molten indium behaves similarly in that it too is an excellent reaction medium, but it gives compounds that are different from those obtained from gallium. Some of the new phase identified in the aluminide class are complex phases and may be present in many advanced Al-matrix alloys. Such phases play a key role in determining (either beneficially or detrimentally) the mechanical properties of advanced Al-matrix alloys. This project enhanced our basic knowledge of the solid state chemistry

  5. Distribution coefficient values describing iodine, neptunium, selenium, technetium, and uranium sorption to Hanford sediments. Supplement 1

    SciTech Connect (OSTI)

    Kaplan, D.I.; Seme, R.J.

    1995-03-01

    Burial of vitrified low-level waste (LLW) in the vadose zone of the Hanford Site is being considered as a long-term disposal option. Regulations dealing with LLW disposal require that performance assessment (PA) analyses be conducted. Preliminary modeling efforts for the Hanford Site LLW PA were conducted to evaluate the potential health risk of a number of radionuclides, including Ac, Am, C, Ce, Cm, Co, Cs, Eu, 1, Nb, Ni, Np, Pa, Pb, Pu, Ra, Ru, Se, Sn, Sr, Tc, Th, U, and Zr (Piepho et al. 1994). The radionuclides, {sup 129}I, {sup 237}Np, {sup 79}Se, {sup 99}Tc, and {sup 234,235,238}U, were identified as posing the greatest potential health hazard. It was also determined that the outcome of these simulations were very sensitive to the parameter describing the extent to which radionuclides sorbed to the subsurface matrix, described as a distribution coefficient (K{sub d}). The distribution coefficient is a ratio of the radionuclide concentration associated with the solid phase to that in the liquid phase. The literature-derived K{sub d} values used in these simulations were conservative, i.e., lowest values within the range of reasonable values used to provide an estimate of the maximum health threat. Thus, these preliminary modeling results reflect a conservative estimate rather than a best estimate of what is likely to occur. The potential problem with providing only a conservative estimate is that it may mislead us into directing resources to resolve nonexisting problems.

  6. DESIGN AND ANALYSIS OF AN INTEGRATED PULSE MODULATED S-BAND POWER AMPLIFIER IN GALLIUM NITRIDE PROCESS

    SciTech Connect (OSTI)

    STEVE SEDLOCK

    2012-04-04

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  7. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOE Patents [OSTI]

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  8. HIGH-QUALITY, LOW-COST BULK GALLIUM NITRIDE SUBSTRATES GROWN BY THE ELECTROCHEMICAL SOLUTION GROWTH METHOD

    Broader source: Energy.gov [DOE]

    To develop ESG into a viable bulk growth process for GaN that is more scalable to large-area wafer manufacturing and able to produce cost-effective, high-quality bulk GaN substrates.

  9. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    SciTech Connect (OSTI)

    Murakami, Katsuhisa Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi; Tanaka, Shunsuke; Hirukawa, Ayaka; Kano, Emi; Takeguchi, Masaki

    2015-03-02

    A single layer of graphene with dimensions of 20?mm??20?mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50?nm to 200?nm.

  10. Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Stach, E. A.

    2016-04-13

    We study the growth of GaN nanowires from liquid Au–Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (11¯20) or (11¯00) directions, by the addition of {11¯00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. Finally, the results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III–V semiconductor nanowires.

  11. Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka; Ahyi, Ayayi; Dhar, Sarit

    2016-03-10

    Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga2O3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reversemore » bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga2O3 photodetectors.« less

  12. Photovoltaic Single-Crystalline, Thin-Film Cell Basics

    Broader source: Energy.gov [DOE]

    Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic.

  13. Imaging findings and pharmacokinetics of 111-indium ZME-018 monoclonal antibody (MoAb) in malignant melanoma

    SciTech Connect (OSTI)

    Murray, J.L.; Rosenblum, M.; Lamki, L.; Haynie, T.P.; Glenn, H.; Jahns, M.; Plager, C.; Hersh, E.M.; Unger, M.; Carlo, D.L.

    1985-05-01

    13 patients with metastatic melanoma were studied using 5 mCi of In-111 labeled MoAb ZME-018 which reacts with GP 240 melanoma-associated antigen. The MoAb was infused over 2 h at doses of 2.5 mg (5 pts), 5 mg (5 pts), and 10 mg (3 pts). Total body tomograms and planar spot views with region of interest analysis were performed at 4, 24 and 72 hours post infusion. No adverse side effects were noted. There was rapid distribution to spleen, bone, bone marrow, liver, and testes. Tumor sites could be visualized as early as 24 hours but were more easily seen at 72 hours when the background activity was less. 20 of 46 (43%) previously documented metastases were identified. More sites imaged with increasing concentrations of MoAB, I.E., 25% at 2.5 mg; 67% at 5 mg; 70% at 10 mg. Tumor localization occurred in a significant number of patients especially at MoAb doses above 2.5 mg. In two instances, uptake of 111-In occurred in previously undiagnosed sites. The pharmacokinetics of MoAb were analyzed at each dose level. At the 5 mg dose, the terminal phase half-life for 111-In in plasma was 24.5 +- 2.7 hours. The apparent volume of distribution (Vd) was 4.03 +- 5iota similar to the plasma value, and the calculated clearance rate for 111-In label was 0.0259 + 0.002 ml/kg/min. Mean urinary excretion of 111-In label was 8.7 +- 0.6% of the administered dose over 48 hours after administration. The calculated pharmacokinetic parameters were independent of antibody dose. ZME 018 was cleared more rapidly from plasma, compared to previous studies with P97 antimelanoma MoAb.

  14. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  15. Beyond Silicon: Cutting the Costs of Solar Power

    DOE R&D Accomplishments [OSTI]

    Ahlberg, Liz

    2011-04-15

    New method of fabricating semiconductors from gallium arsenide promises more affordable solar power, improved semiconductor devices.

  16. Some aspects of geophagia in Wyoming bighorn sheep (Ovis canadensis...

    Office of Scientific and Technical Information (OSTI)

    ANIMALS; DIET; ELEMENTS; FORAGE; SELENIUM; SHEEP; SODIUM; SOILS; TRACE AMOUNTS animal nutrition; mineral licks; selenium; sodium Word Cloud More Like This Full Text Journal...

  17. Electrical and optical performance characteristics of 0.74eV p/n InGaAs monolithic interconnected modules

    SciTech Connect (OSTI)

    Wilt, D.M.; Weizer, V.G.; Fatemi, N.S.; Jenkins, P.P.; Hoffman, R.W. Jr.; Jain, R.K.; Murray, C.S.; Riley, D.R.

    1997-06-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 cm{sup 2} device consisting of eight series interconnected cells. MIM devices, produced from 0.74 eV InGaAs, have demonstrated V{sub oc} = 3.2 volts, J{sub sc} = 70 mA/cm{sup 2} and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (> 2 {micro}m) of these devices indicate a reflectivity of > 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  18. Method for the chemical separation of GE-68 from its daughter Ga-68

    DOE Patents [OSTI]

    Fitzsimmons, Jonathan M.; Atcher, Robert W.

    2010-06-01

    The present invention is directed to a generator apparatus for separating a daughter gallium-68 radioisotope substantially free of impurities from a parent gernanium-68 radioisotope, including a first resin-containing column containing parent gernanium-68 radioisotope and daughter gallium-68 radioisotope, a source of first eluent connected to said first resin-containing column for separating daughter gallium-68 radioisotope from the first resin-containing column, said first eluent including citrate whereby the separated gallium is in the form of gallium citrate, a mixing space connected to said first resin-containing column for admixing a source of hydrochloric acid with said separated gallium citrate whereby gallium citrate is converted to gallium tetrachloride, a second resin-containing column for retention of gallium-68 tetrachloride, and, a source of second eluent connected to said second resin-containing column for eluting the daughter gallium-68 radioisotope from said second resin-containing column.

  19. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    SciTech Connect (OSTI)

    Ha, Tae-Jun

    2014-10-15

    We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  20. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-12

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013more » e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.« less

  1. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  2. Production data on 0.55 eV InGaAs thermophotovoltaic cells

    SciTech Connect (OSTI)

    Wojtzuk, S.; Colter, P.; Charache, G.; Campbell, B.

    1996-05-01

    Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm{sup 2} short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 {micro}m. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss.

  3. Determinants of the Price of High-Tech Metals: An Event Study

    SciTech Connect (OSTI)

    Wanner, Markus Gaugler, Tobias; Gleich, Benedikt; Rathgeber, Andreas

    2015-06-15

    The growing demand for high-tech products has resulted in strong growth in demand for certain minor metals. In combination with production concentrated in China, this caused strong and unpredicted price movements in recent years. As a result, manufacturing companies have to cope with additional risks. However, the detailed reasons for the price development are only partially understood. Therefore, we analyzed empirically which determinants can be assigned to price movements and performed an event study on the high-tech metals neodymium, indium, and gallium. Based on our dataset of news items, we were able to find coinciding events to almost 90% of all price jumps (recall). We showed that if any information about these events occurred with a probability of over 50% there would also be a price jump within 10 days (precision). However, the classical set of price determinants has to be extended for these specific markets, as we found unorthodox factors like holidays or weather that may be indicators for price movements. Therefore, we hope that our study supports industry for instance in performing more informed short-term planning of metals purchasing based on information about specific events.

  4. Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

    SciTech Connect (OSTI)

    Chasin, Adrian Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul; Simoen, Eddy; Gielen, Georges

    2014-02-24

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ?10{sup 19}?cm{sup ?3}?eV{sup ?1} at the conduction band edge and a value of ?10{sup 17}?cm{sup ?3}?eV{sup ?1} at an energy of 0.55?eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

  5. Plasma-Assisted Coevaporation of S and Se for Wide Band Gap Chalcopyrite Photovoltaics: Phase I Annual Report; December 2001-December 2002

    SciTech Connect (OSTI)

    Repins, I.; Wolden, C.

    2003-01-01

    In this work, ITN Energy Systems (ITN) and lower-tier subcontractor Colorado School of Mines (CSM) explore the replacement of the molecular chalcogen precursors during deposition (e.g., Se2 or H2Se) with more reactive chalcogen monomers or radicals (e.g., Se). Molecular species will be converted to atomic species in a low-pressure inductively coupled plasma. The non-equilibrium environment created by the plasma will allow control over the S/Se ratio in these films. Tasks of the proposed program center on developing and validating monoatomic chalcogen chemistry, tuning of low-pressure monomer chalcogen sources, and evaluating plasma-assisted coevaporation (PACE) for CIGS coevaporation. Likely advantages of deposition by plasma-enhanced coevaporation include: (a)provides potential for lower deposition temperature and/or for better film quality at higher deposition temperature; (b) provide potential for decreased deposition times; (c) provides high material utilization efficiency ({approx}90%) that results in less deposition on other parts of the reactor, leading to lower clean-up and maintenance costs, as well as longer equipment lifetime; (d) high material utilization efficiency also reduces the total operating pressure, which is beneficial for the design and control of metal coevaporation (advantages include minimal metal-vapor beam spread and lower source operating temperatures); (e) enables deposition of wide-bandgap copper indium gallium sulfur-selenide (CIGSS) films with controlled stoichiometry.

  6. Method and system for the combination of non-thermal plasma and metal/metal oxide doped .gamma.-alumina catalysts for diesel engine exhaust aftertreatment system

    DOE Patents [OSTI]

    Aardahl, Christopher L.; Balmer-Miller, Mari Lou; Chanda, Ashok; Habeger, Craig F.; Koshkarian, Kent A.; Park, Paul W.

    2006-07-25

    The present disclosure pertains to a system and method for treatment of oxygen rich exhaust and more specifically to a method and system that combines non-thermal plasma with a metal doped .gamma.-alumina catalyst. Current catalyst systems for the treatment of oxygen rich exhaust are capable of achieving only approximately 7 to 12% NO.sub.x reduction as a passive system and only 25 40% reduction when a supplemental hydrocarbon reductant is injected into the exhaust stream. It has been found that treatment of an oxygen rich exhaust initially with a non-thermal plasma and followed by subsequent treatment with a metal doped .gamma.-alumina prepared by the sol gel method is capable of increasing the NO.sub.x reduction to a level of approximately 90% in the absence of SO.sub.2 and 80% in the presence of 20 ppm of SO.sub.2. Especially useful metals have been found to be indium, gallium, and tin.

  7. Absorptivity of semiconductors used in the production of solar cell panels

    SciTech Connect (OSTI)

    Kosyachenko, L. A. Grushko, E. V.; Mikityuk, T. I.

    2012-04-15

    The dependence of the absorptivity of semiconductors on the thickness of the absorbing layer is studied for crystalline silicon (c-Si), amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS), and copper gallium diselenide (CuGaSe{sub 2}, CGS). The calculations are performed with consideration for the spectral distribution of AM1.5 standard solar radiation and the absorption coefficients of the materials. It is shown that, in the region of wavelengths {lambda} = {lambda}{sub g} = hc/E{sub g}, almost total absorption of the photons in AM1.5 solar radiation is attained in c-Si at the thickness d = 7-8 mm, in a-Si at d = 30-60 {mu}m, in CdTe at d = 20-30 {mu}m, and in CIS and CGS at d = 3-4 {mu}m. The results differ from previously reported data for these materials (especially for c-Si). In previous publications, the thickness needed for the semiconductor to absorb solar radiation completely was identified with the effective light penetration depth at a certain wavelength in the region of fundamental absorption for the semiconductor.

  8. Monolithically integrated Helmholtz coils by 3-dimensional printing

    SciTech Connect (OSTI)

    Li, Longguang [Department of Electrical Engineering, University of MichiganShanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Abedini-Nassab, Roozbeh; Yellen, Benjamin B., E-mail: yellen@duke.edu [Department of Electrical Engineering, University of MichiganShanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240 (China); Department of Mechanical Engineering and Materials Science, Duke University, P.O. Box 90300, Hudson Hall, Durham, North Carolina 27708 (United States)

    2014-06-23

    3D printing technology is of great interest for the monolithic fabrication of integrated systems; however, it is a challenge to introduce metallic components into 3D printed molds to enable broader device functionality. Here, we develop a technique for constructing a multi-axial Helmholtz coil by injecting a eutectic liquid metal Gallium Indium alloy (EGaIn) into helically shaped orthogonal cavities constructed in a 3D printed block. The tri-axial solenoids each carry up to 3.6?A of electrical current and produce magnetic field up to 70?G. Within the central section of the coil, the field variation is less than 1% and is in agreement with theory. The flow rates and critical pressures required to fill the 3D cavities with liquid metal also agree with theoretical predictions and provide scaling trends for filling the 3D printed parts. These monolithically integrated solenoids may find future applications in electronic cell culture platforms, atomic traps, and miniaturized chemical analysis systems based on nuclear magnetic resonance.

  9. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    SciTech Connect (OSTI)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15

    Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de lclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  10. Photovoltaic manufacturing: Present status, future prospects, and research needs

    SciTech Connect (OSTI)

    Wolden, C.A.; Fthenakis, V.; Kurtin, J.; Baxter, J.; Repins, I.; Shasheen, S.; Torvik, J.; Rocket, A.; Aydil, E.

    2011-03-29

    In May 2010 the United States National Science Foundation sponsored a two-day workshop to review the state-of-the-art and research challenges in photovoltaic (PV) manufacturing. This article summarizes the major conclusions and outcomes from this workshop, which was focused on identifying the science that needs to be done to help accelerate PV manufacturing. A significant portion of the article focuses on assessing the current status of and future opportunities in the major PV manufacturing technologies. These are solar cells based on crystalline silicon (c-Si), thin films of cadmium telluride (CdTe), thin films of copper indium gallium diselenide, and thin films of hydrogenated amorphous and nanocrystalline silicon. Current trends indicate that the cost per watt of c-Si and CdTe solar cells are being reduced to levels beyond the constraints commonly associated with these technologies. With a focus on TW/yr production capacity, the issue of material availability is discussed along with the emerging technologies of dye-sensitized solar cells and organic photovoltaics that are potentially less constrained by elemental abundance. Lastly, recommendations are made for research investment, with an emphasis on those areas that are expected to have cross-cutting impact.

  11. Bimetallic strip for low temperature use

    DOE Patents [OSTI]

    Bussiere, Jean F.; Welch, David O.; Suenaga, Masaki

    1981-01-01

    There is provided a class of mechanically pre-stressed structures, suitably bi-layer strips comprising a layer of group 5 transition metals in intimate contact with a layer of an intermetallic compound of said transition metals with certain group 3A, 4A or 5A metals or metalloids suitably gallium, indium, silicon, germanium, tin, arsenic or antimony. The changes of Young's modulus of these bi-layered combinations at temperatures in the region of but somewhat above absolute zero provides a useful means of sensing temperature changes. Such bi-metallic strips may be used as control strips in thermostats, in direct dial reading instruments, or the like. The structures are made by preparing a sandwich of a group 5B transition metal strip between the substantially thicker strips of an alloy between copper and a predetermined group 3A, 4A or 5A metal or metalloid, holding the three layers of the sandwich in intimate contact heating the same, cooling the same and removing the copper alloy and then removing one of the two thus formed interlayer alloys between said transition metal and the metal previously alloyed with copper.

  12. Method of preparing doped oxide catalysts for lean NOx exhaust

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-09

    The lean NOx catalyst includes a substrate, an oxide support material, preferably .gamma.-alumina deposited on the substrate and a metal or metal oxide promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium cerium, and vanadium, and oxides thereof, and any combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between 80 and 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to about 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  13. Metal/metal oxide doped oxide catalysts having high deNOx selectivity for lean NOx exhaust aftertreatment systems

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-16

    A lean NOx catalyst and method of preparing the same is disclosed. The lean NOx catalyst includes a ceramic substrate, an oxide support material, preferably .gamma.-alumina, deposited on the substrate and a metal promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium, cerium, vanadium, oxides thereof, and combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between about 80 to 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  14. Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

    SciTech Connect (OSTI)

    Noh, Joo Hyon; Joshi, Pooran C.; Kuruganti, Teja; Rack, Philip D.

    2014-11-26

    Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.

  15. Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Noh, Joo Hyon; Joshi, Pooran C.; Kuruganti, Teja; Rack, Philip D.

    2014-11-26

    Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. Themore » typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.« less

  16. Rare-earth transition-metal gallium chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se)

    SciTech Connect (OSTI)

    Rudyk, Brent W.; Stoyko, Stanislav S.; Oliynyk, Anton O.; Mar, Arthur

    2014-02-15

    Six series of quaternary rare-earth transition-metal chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se), comprising 33 compounds in total, have been prepared by reactions of the elements at 1050 °C (for the sulphides) or 900 °C (for the selenides). They adopt noncentrosymmetric hexagonal structures (ordered Ce{sub 3}Al{sub 1.67}S{sub 7}-type, space group P6{sub 3}, Z=2) with cell parameters in the ranges of a=9.5–10.2 Å and c=6.0–6.1 Å for the sulphides and a=10.0–10.5 Å and c=6.3–6.4 Å for the selenides as refined from powder X-ray diffraction data. Single-crystal structures were determined for five members of the sulphide series RE{sub 3}FeGaS{sub 7} (RE=La, Pr, Tb) and RE{sub 3}CoGaS{sub 7} (RE=La, Tb). The highly anisotropic crystal structures consist of one-dimensional chains of M-centred face-sharing octahedra and stacks of Ga-centred tetrahedra all pointing in the same direction. Magnetic measurements on the sulphides reveal paramagnetic behaviour in some cases and long-range antiferromagnetic behaviour with low Néel temperatures (15 K or lower) in others. Ga L-edge XANES spectra support the presence of highly cationic Ga tetrahedral centres with a tendency towards more covalent Ga–Ch character on proceeding from the sulphides to the selenides. Band structure calculations on La{sub 3}FeGaS{sub 7} indicate that the electronic structure is dominated by Fe 3d-based states near the Fermi level. - Graphical abstract: The series of chalcogenides RE{sub 3}MGaS{sub 7}, which form for a wide range of rare-earth and transition metals (M=Fe, Co, Ni), adopt highly anisotropic structures containing chains of M-centred octahedra and stacks of Ga-centred tetrahedra. Display Omitted - Highlights: • Six series (comprising 33 compounds) of chalcogenides RE{sub 3}MGaCh{sub 7} were prepared. • They adopt noncentrosymmetric hexagonal structures with high anisotropy. • Most compounds are paramagnetic; some show antiferromagnetic ordering. • Ga L-edge XANES confirms presence of cationic Ga species.

  17. Noncentrosymmetric rare-earth copper gallium chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se): An unexpected combination

    SciTech Connect (OSTI)

    Iyer, Abishek K.; Rudyk, Brent W.; Lin, Xinsong; Singh, Harpreet; Sharma, Arzoo Z.; Wiebe, Christopher R.; Mar, Arthur

    2015-09-15

    The quaternary rare-earth chalcogenides RE{sub 3}CuGaS{sub 7} and RE{sub 3}CuGaSe{sub 7} (RE=La–Nd) have been prepared by reactions of the elements at 1050 °C and 900 °C, respectively. They crystallize in the noncentrosymmetric La{sub 3}CuSiS{sub 7}-type structure (hexagonal, space group P6{sub 3}, Z=2) in which the a-parameter is largely controlled by the RE component (a=10.0–10.3 Å for the sulfides and 10.3–10.6 Å for the selenides) whereas the c-parameter is essentially fixed by the choice of Ga and chalcogen atoms within tetrahedral units (c=6.1 Å for the sulfides and 6.4 Å for the selenides). They extend the series RE{sub 3}MGaCh{sub 7}, previously known for divalent metal atoms (M=Mn–Ni), differing in that the Cu atoms in RE{sub 3}CuGaCh{sub 7} occupy trigonal planar sites instead of octahedral sites. Among quaternary chalcogenides RE{sub 3}MM′Ch{sub 7}, the combination of monovalent (M=Cu) and trivalent (M′=Ga) metals is unusual because it appears to violate the condition of charge balance satisfied by most La{sub 3}CuSiS{sub 7}-type compounds. The possibility of divalent Cu atoms was ruled out by bond valence sum analysis, magnetic measurements, and X-ray photoelectron spectroscopy. The electron deficiency in RE{sub 3}CuGaCh{sub 7} is accommodated through S-based holes at the top of the valence band, as shown by band structure calculations on La{sub 3}CuGaS{sub 7}. An optical band gap of about 2.0 eV was found for La{sub 3}CuGaSe{sub 7}. - Graphical abstract: The chalcogenides RE{sub 3}CuGaCh{sub 7} contain monovalent Cu in trigonal planes and trivalent Ga in tetrahedra; they are electron-deficient representatives of La{sub 3}CuSiS{sub 7}-type compounds, which normally satisfy charge balance. - Highlights: • Quaternary chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se) were prepared. • Bond valence sums, magnetism, and XPS data give evidence for monovalent Cu. • Crystal structures reveal high anisotropy of Cu displacement. • Electron deficiency is accommodated by S-based holes in valence band.

  18. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  19. Sandia/CINT Research on the Cover of Applied Physics Letters

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... of partially processed device, showing titanium-gold (TiAu) gates on gallium-arsenide... of partially processed device, showing titanium-gold (TiAu) gates on gallium-arsenide...

  20. Enhancement of lanthanide evaporation by complexation: Dysprosium tri-iodide mixed with indium iodide and thulium tri-iodide mixed with thallium iodide

    SciTech Connect (OSTI)

    Curry, J. J.; Henins, A.; Hardis, J. E.; Estupin, E. G.; Lapatovich, W. P.; Shastri, S. D.

    2013-09-28

    The vapors in equilibrium with condensates of DyI{sub 3}, DyI{sub 3}/InI, TmI{sub 3}, and TmI{sub 3}/TlI were observed over the temperature range from 900 K to 1400 K using x-ray induced fluorescence. The total densities of each element (Dy, Tm, In, Tl, and I) in the vapor, summed over all atomic and molecular species, were determined. Dramatic enhancements in the total vapor densities of Dy and Tm were observed in the vapors over DyI{sub 3}/InI and TmI{sub 3}/TlI as compared to the vapors over pure DyI{sub 3} and pure TmI{sub 3}, respectively. An enhancement factor exceeding 10 was observed for Dy at T? 1020 K, decreasing to 0 at T? 1250 K. An enhancement factor exceeding 20 was observed for Tm at T? 1040 K, decreasing to 0 at T? 1300 K. Such enhancements are expected from the formation of the vapor-phase hetero-complexes DyInI{sub 4} and TmTlI{sub 4}. Numerical simulations of the thermo-chemical equilibrium suggest the importance of additional complexes in liquid phases. A description of the measurement technique is given. Improvements in the absolute calibration lead to an approximately 40% correction to previously reported preliminary results [J. J. Curry et al., Chem. Phys. Lett. 507, 52 (2011); Appl. Phys. Lett. 100, 083505 (2012)].

  1. Effects of H{sub 2} plasma treatment on the electrical properties of titanium-doped indium oxide films prepared by polymer-assisted deposition

    SciTech Connect (OSTI)

    Hwang, Joo-Sang; Lee, Ji-Myon; Vishwanath, Sujaya Kumar; Kim, Jihoon

    2015-07-15

    The effects of hydrogen (H{sub 2}) plasma on the optical and electrical properties of titanium-doped InO (TIO) grown on glass substrates using polymer-assisted deposition are reported. Samples were exposed to H{sub 2} plasma formed by inductively coupled plasma (ICP). After plasma treatment at a power of 100 W, the sheet resistance of the TIO films decreased from 11 000 to 285 Ω/sq. Additionally, the Hall mobility and sheet carrier concentration of the films increased as the ICP source power was increased to 100 W, without affecting the optical transmittance of the films, due to the removal of the polymer residues and the formation of oxygen vacancies.

  2. The kinetics and quantitation of platelet deposition on control (CPC) and heparin-bonded polyurethane angio-catheter (HBPC) with indium-111 labeled platelets in a dog model

    SciTech Connect (OSTI)

    Dewanjee, M.K.; Rowland, S.M.; Dewanjee, P.K.; Kapadvanjwala, M.; MacGregor, D.C.; Serafini, A.N.; Palatianos, G.M.; Georgiou, M.F.; Sfakianakis, G.N. )

    1990-01-01

    The dynamics of platelet deposition on CPC and HBPC was evaluated with In-111 labeled platelets (In-PLT) with a computerized gamma camera (CGC). Ten non-heparinized dogs (18-25 kg) were catheterized in both femoral arteries with 10 cm of CPC and HBPC (5 Fr., Cordis, Inc.) 24 hours post-injection of 300-420 microcuries of In-PLT, and imaged for 3 hours with gamma camera. The regional platelet deposition on three segments of catheters and puncture site was determined. The catheters were harvested and radioactivity on the catheter segments (proximal: PROX, middle: MID, distal: DIST and puncture site: PS) of both was determined. From the platelet count in blood, radioactivity in blood and segments of catheters, adjacent artery and area of artery and catheter, the platelet-density (X10(3)) (mean +/- S.D.) on catheter and artery were calculated and tabulated: (table; see text) The large standard deviation of retained platelets is due to embolization. The platelet-density and regional counts on catheter segments were lower in the HBPC than CPC. The rate of platelet-deposition was lower in the HBPC than CPC. Most of the thrombi were lost during pullout of the catheter. Both in vivo (dynamic) and in vitro studies were necessary for evaluation of CPC thrombogenicity.

  3. Effects of phase transformation on the microstructures and magnetostri...

    Office of Scientific and Technical Information (OSTI)

    ... Subject: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOMAIN STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; IRON BASE ALLOYS; ...

  4. Gamma ray measurements with photoconductive detectors using a...

    Office of Scientific and Technical Information (OSTI)

    AND TECHNOLOGY; ARGON; BREMSSTRAHLUNG; DEUTERIUM; DIAMONDS; GALLIUM ARSENIDES; GAMMA DETECTION; GAMMA RADIATION; HYDROGEN; MEV RANGE; NEON; PHOTOCONDUCTORS; PHOTOMULTIPLIERS;...

  5. Reproductive success, early life stage development, and survival of westslope cutthroat trout (Oncorhynchus clarki lewisi) exposed to elevated selenium in an area of active coal mining

    SciTech Connect (OSTI)

    Barri-Lynn Rudolph; Iisak Andreller; Christopher J. Kennedy

    2008-04-15

    The effects of accumulated Se on the reproductive success and larval development of cutthroat trout (Oncorhynchus clarki lewisi) collected from a site of active coal mining in British Columbia were assessed. Eggs from 12 fish from an exposed site (Clode Pond) and 16 from a reference site (O'Rourke Lake) were field-collected and reared in the laboratory. Egg Se concentrations ranged from 12.3 to 16.7 and 11.8 to 140.0 {mu}g/g dry weight (dw) from fish collected at the reference and exposed sites, respectively. Other studies, including those with this species, have not shown Se to affect egg viability. However, in the present study, eggs with Se concentrations >86.3 {mu}g/g dw were not successfully fertilized or were nonviable at fertilization, while eggs with concentrations >46.8 and <75.4 {mu}g/g dw were fertilized (96% reached the eyed stage) but did not produce viable fry. A significant positive relationship between egg Se concentration and alevin mortality was observed. Deformities were analyzed in surviving fry which developed from eggs with Se concentrations between 11.8 and 20.6 {mu}g/g dw. No relationship between Se concentration in eggs and deformities or edema was found in this range, suggesting that the no-effect threshold for deformity is >20.6 {mu}g/g dw. The present data, in conjunction with the data from several other studies in temperate fish, suggest that current Se thresholds are conservative for cold-water fish. 25 refs., 3 figs.

  6. Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure

    DOE Patents [OSTI]

    Yang, Jihui; Shi, Xun; Bai, Shengqiang; Zhang, Wenqing; Chen, Lidong; Yang, Jiong

    2012-01-17

    A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A.sub.8TM.sub.y.sub.1.sup.1TM.sub.y.sub.2.sup.2 . . . TM.sub.y.sub.n.sup.nM.sub.zX.sub.46-y.sub.1.sub.-y.sub.2.sub.- . . . -y.sub.n.sub.-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM.sup.1, TM.sup.2, and TM.sup.n are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y.sub.1, y.sub.2, y.sub.n and Z are actual compositions of TM.sup.1, TM.sup.2, TM.sup.n, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8q.sub.A-|.DELTA.q.sub.1|y.sub.1-|.DELTA.q.sub.2|y.sub.2- . . . -|.DELTA.q.sub.n|y.sub.n, wherein q.sub.A is a charge state of A, and wherein .DELTA.q.sub.1, .DELTA.q.sub.2, .DELTA.q.sub.n are, respectively, the nominal charge state of the first, second, and n-th TM.

  7. Plasma-Assisted Coevaporation of S and Se for Wide Band Gap Chalcopyrite Photovoltaics: Phase II Annual Report, December 2002--December 2003

    SciTech Connect (OSTI)

    Repins, I.; Wolden, C.

    2004-01-01

    In this work, ITN Energy Systems (ITN) and lower-tier subcontractor Colorado School of Mines (CSM) explore the replacement of the molecular chalcogen precursors during deposition (e.g., Se2 or H2Se) with more reactive chalcogen monomers or radicals (e.g., Se). Molecular species are converted to atomic species in a low-pressure inductively coupled plasma (ICP). Tasks of the proposed program center on development and validation of monatomic chalcogen chemistry, tuning of low-pressure monomer chalcogen sources, and evaluation of plasma-assisted co-evaporation (PACE) for CIGS co-evaporation. Likely advantages of deposition by plasma-enhanced co-evaporation include: (1) Providing potential for lower deposition temperature and/or for better film quality at higher deposition temperature. (2) Providing potential for decreased deposition times. (3) Providing high material utilization efficiency ({approx}90%) that results in less deposition on other parts of the reactor, leading to lower clean up and maintenance costs, as well as longer equipment lifetime. High material utilization efficiency also reduces the total operating pressure, which is beneficial for the design and control of metal co-evaporation. Advantages include minimal metal-vapor beam spread and lower source operating temperatures. (4) Enabling deposition of wide-bandgap copper indium gallium disulfur-selenide (CIGSS) films with controlled stoichiometry. University researchers at CSM are developing and testing the fundamental chemistry and engineering principles. Industrial researchers at ITN are adapting PACE technology to CIGSS co-evaporation and validating PACE process for fabrication of thin-film photovoltaics. In2Se3 films, which are used as precursor layers in high-efficiency CIGS depositions, were used this year as the first test case for examining the advantages of PACE listed above. Gradually, the investigation is being extended to the complete high-efficiency three-stage co-evaporation process.

  8. Modulating dual-wavelength multiple quantum wells in white light emitting diodes to suppress efficiency droop and improve color rendering index

    SciTech Connect (OSTI)

    Zhao, Yukun; Wang, Shuai; Zheng, Min; Ding, Wen; Yun, Feng; Su, Xilin; Yang, Xiangrong; Liu, Shuo; Guo, Maofeng; Zhang, Ye

    2015-10-14

    In this paper, gallium nitride (GaN) based white light-emitting diodes (WLEDs) with modulated quantities of blue (In{sub 0.15}Ga{sub 0.85}N) quantum wells (QWs) and cyan QWs (In{sub 0.18}Ga{sub 0.82}N) in multiple QW (MQW) structures have been investigated numerically and experimentally. It is demonstrated that the optical performance of LEDs is sensitive to the quantities of cyan QWs in dual-wavelength MQW structures. Compared to the LEDs with respective 0, 4, and 8 cyan QWs (12 QWs in total), the optical performance of the sample with 6 cyan QWs is the best. The deterioration of the optical performance in the sample with less (4 pairs) cyan QWs or more (8 pairs) cyan QWs than 6 cyan QWs may be ascribed to weakened reservoir effect or more defects induced. Compared to conventional blue LEDs (12 blue QWs), the sample with 6 cyan QWs could effectively suppress the efficiency droop (the experimental droop ratio decreases from 50.3% to 39.5% at 80 A/cm{sup 2}) and significantly improve the color rendering index (CRI, increases from 66.4 to 77.0) simultaneously. We attribute the droop suppression to the strengthened reservoir effect and carrier confinement of deeper QWs (higher indium composition) incorporated in the dual-wavelength MQW structures, which lead to the better hole spreading and enhanced radiative recombination. Meanwhile, the remarkable experimental CRI improvement may result from the wider full-width at half-maximum of electroluminescence spectra and higher cyan intensity in WLED chips with dual-wavelength MQW structures.

  9. Structural and optical properties of Ga{sub 2}O{sub 3}:In films deposited on MgO (1 0 0) substrates by MOCVD

    SciTech Connect (OSTI)

    Kong Lingyi; Ma Jin; Luan Caina; Zhu Zhen

    2011-08-15

    Ga{sub 2}O{sub 3}:In films with different indium (In) content x [x=In/(Ga+In) atomic ratio] have been deposited on MgO (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). Structural analyses revealed that the film deposited with actual In content (x') of 0.09 was an epitaxial film and the films with x'=0.18 and 0.37 had mixed-phase structures of monoclinic Ga{sub 2}O{sub 3} and bixbyite In{sub 2}O{sub 3}. The absolute average transmittance of the obtained films in the visible region exceeded 95%, and the band gap was in the range of 4.74-4.87 eV. Photoluminescence (PL) measurements were performed at room temperature, in which the visible luminescences were strong and could be seen by the naked eye. The strong emissions in the visible light region were proposed to originate from the gallium vacancies, oxygen deficiencies and other defects in these films. - Graphical abstract: Low magnification XTEM (a), HRTEM (b) and SAED (c) micrographs of the interface area between Ga{sub 1.82}In{sub 0.18}O{sub 3} film and MgO substrate have showed the Ga{sub 1.82}In{sub 0.18}O{sub 3} is an epitaxial film. Highlights: > Ga{sub 1.82}In{sub 0.18}O{sub 3} epitaxial film was deposited on MgO(1 0 0) substrate. > The transmittance of the Ga{sub 2}O{sub 3}:In films in the visible region exceeded 95%. > Strong emissions were observed in the photoluminescence measurements of the films.

  10. Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications

    SciTech Connect (OSTI)

    David M. Dean

    2012-10-30

    Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

  11. PNWD

    Office of Legacy Management (LM)

    ... increa ses in selenium in sur face water and sed iment that can affect fish and wildl ife (particularly avian species) from the co nsum ptio n o f selenium throu gh the food web. ...

  12. Untitled Document

    National Nuclear Security Administration (NNSA)

    Radionuclide Retardation Measurements of Batch-Sorption Distribution Coefficients for Barium, Cesium, Selenium, Strontium, Uranium, Plutonium, and Neptunium, Submittal 12...

  13. Photo-crystallization in a-Se layer structures: Effects of film-substrate interface-rigidity

    SciTech Connect (OSTI)

    Lindberg, G. P.; Gross, N.; Weinstein, B. A.; O'Loughlin, T.; Mishchenko, A.; Reznik, A.; Abbaszadeh, S.; Karim, K. S.; Belev, G.

    2014-11-21

    Amorphous selenium (a-Se) films deposited on rigid substrates can undergo photo-induced crystallization (PC) even at temperatures (T) well below the glass transition, T{sub g}???313?K. Substrate-generated shear strain is known to promote the PC process. In the present work, we explore the influence of different substrates (Si and glass), and different film-layer-substrate combinations, on the PC in a variety of a-Se films and film-structures. The intermediate layers (indium tin oxide and polyimide) are chosen to promote conductivity and/or to be a buffer against interface strain in structures of interest for digital imaging applications. The PC characteristics in these samples are evaluated and compared using optical microscopy, atomic-force microscopy, Raman mapping, and T-dependent Raman spectroscopy. Both the presence of a soft intermediate layer, and the thermal softening that occurs for T increasing through T{sub g}, inhibit the tendency for the onset of PC. The extensive PC mapping results in the wide range of samples studied here, as well as the suppression of PC near T{sub g} in this array of samples, strongly support the generality of this behavior. As a consequence, one may expect that the stability of a-Se films against PC can be enhanced by decreasing the rigidity of the film-substrate interface. In this regard, advanced film structures that employ flexible substrates, soft intermediate layers, and/or are designed to be operated near T{sub g} should be explored.

  14. A New Gap-Opening Mechanism in a Triple-Band Metal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... The measured energy bands of indium atomic wires in the metallic state (left) and in the ... of indium wires on silicon with the soft x-ray angle-resolved photoemission endstation ...

  15. Bandgap Engineering of InP QDs Through Shell Thickness and Composition...

    Office of Scientific and Technical Information (OSTI)

    Language: English Subject: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY; COATINGS; INDIUM PHOSPHIDES; ...

  16. Enhancement of thermoelectric performance in InAs nanotubes by...

    Office of Scientific and Technical Information (OSTI)

    International Atomic Energy Agency (IAEA) Country of Publication: United States Language: English Subject: 77 NANOSCIENCE AND NANOTECHNOLOGY; GREEN FUNCTION; INDIUM ...

  17. Immobilization of azurin with retention of its native electrochemical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    properties at alkylsilane self-assembled monolayer modified indium tin oxide Immobilization of azurin with retention of its native electrochemical properties at alkylsilane self-assembled monolayer modified indium tin oxide Authors: Ashur, I. and Jones, A. K. Title: Immobilization of azurin with retention of its native electrochemical properties at alkylsilane self-assembled monolayer modified indium tin oxide Source: Electrochimica Acta Year: 2012 Volume: 85 Pages: 169-174 ABSTRACT: Indium

  18. Bandgap Engineering of InP QDs Through Shell Thickness and Composition...

    Office of Scientific and Technical Information (OSTI)

    Subject: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY; COATINGS; INDIUM PHOSPHIDES; MICROSCOPY; OXIDATION; ...

  19. News Item

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    properties of colloidal indium tin oxide (ITO) nanocrystals. Significance and Impact Understanding the connection between the structural and optoelectronic properties...

  20. Structural tuning of residual conductivity in highly mismatched III-V layers

    DOE Patents [OSTI]

    Han, Jung; Figiel, Jeffrey J.

    2002-01-01

    A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.

  1. The Influence of Lewis Acid/Base Chemistry on the Removal of...

    Office of Scientific and Technical Information (OSTI)

    These results have an important influence on the potential for simple gallium removal in molten salt systems. Authors: Williams, David F. ; Cul, Guillermo D. del 1 ; Toth, Louis ...

  2. Assessment of Latent Heat Reservoirs for Thermal Management of...

    Office of Scientific and Technical Information (OSTI)

    During the early portion of the pulse, heating of the diode and its surrounding material ... Subject: 42 ENGINEERING; CAPACITY; FUSION HEAT; GALLIUM; HEAT FLUX; HEAT TRANSFER; ...

  3. Assessment of Latent Heat Reservoirs for Thermal Management of...

    Office of Scientific and Technical Information (OSTI)

    ... During the early portion of the pulse, heating of the diode and its surrounding material ... Subject: 42 ENGINEERING; CAPACITY; FUSION HEAT; GALLIUM; HEAT FLUX; HEAT TRANSFER; ...

  4. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... Filter Results Filter by Subject materials science (28) gallium nitrides (22) solar (photovoltaic), solid state lighting, phonons, materials and chemistry by design, optics, ...

  5. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... Las Vegas, Nevada (United States) Yucca Mountain Project... structure (1) cystine (1) death (1) design (1) gallium ... solvothermal rate with CuClsub ...

  6. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... (1) fibrosis (1) gallium 68 (1) historical (1) intercomparison (1) losses (1) lungs (1) management of radioactive wastes, and non-radioactive wastes from nuclear ...

  7. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nanoelectronics. This is a narrower bandgap than common semiconductors like silicon or gallium arsenide, and it could enable new kinds of optoelectronic devices for generating,...

  8. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    points (1) chemical properties (1) chemistry (1) circulation cell (1) compatibility ... The Influence of Lewis AcidBase Chemistry on the Removal of Gallium by Volatility from ...

  9. Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open...

    Open Energy Info (EERE)

    Zip: 3051 Product: Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References: Spire...

  10. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    structure (1) fermi level (1) fluorescence (1) gallium alloys (1) hole mobility ... a device, has an important function in fluorescence-based organic light-emitting diodes ...

  11. The role of screening of the electron-phonon interaction in relaxation of photoexcited electron-hole plasma in semiconductors

    SciTech Connect (OSTI)

    Kumekov, S. E.

    2008-08-15

    The role of screening of the interaction of the electron-hole plasma with optical phonons is analytically evaluated by the example of gallium arsenide.

  12. PRiME 2016 (Honolulu, HI) - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cells, and Solar Fuels 7 Sunday, 2 October 2016 Electrochemical Carbon Dioxide Reduction to Hydrocarbons with a Nickel-Gallium Thin Film Catalyst at Low ...

  13. Revealing the Preferred Interlayer Orientations and Stackings...

    Office of Scientific and Technical Information (OSTI)

    Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals Citation Details In-Document Search Title: Revealing the ...

  14. Intrinsic Semiconductor | Open Energy Information

    Open Energy Info (EERE)

    Intrinsic Semiconductor is a privately held emerging growth company focusing on materials and device technologies based on silicon carbide (SiC) and gallium nitride (GaN)...

  15. Cree Inc | Open Energy Information

    Open Energy Info (EERE)

    North Carolina Zip: 27703 Product: Cree develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN), silicon (Si) and...

  16. JX Crystals Inc | Open Energy Information

    Open Energy Info (EERE)

    Solar Product: JX Crystals designs and manufactures thermophotovoltaic gallium-antimonide cells for solar applications. Coordinates: 47.530095, -122.033799 Show Map Loading...

  17. Optimized Alumina Coagulants for Water Purification - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    purification. By inserting a single gallium atom in the center of an aluminum oxide cluster, the stability and efficacy of the reagent is greatly improved. This stability also...

  18. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... (1) copper silicides (1) critical materials strategy (1) energy conservation, consumption, and utilization materials by design (1) fermions (1) gallium base alloys (1) ...

  19. Smooth and vertical facet formation for AlGaN-based deep-UV laser...

    Office of Scientific and Technical Information (OSTI)

    Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM NITRIDES; GALLIUM NITRIDES; ETCHING; LASERS; ...

  20. Photonics Research and Development

    SciTech Connect (OSTI)

    Pookpanratana, Sujitra; Shlayan, Neveen; Venkat, Rama; Das, Bisjwajit; Boehm, Bob; Heske, Clemens; Fraser, Donald; Moustakas, Theodore

    2010-01-15

    improve energy efficiency and lower costs for display and lighting applications (UNLV College of Engineering); (2) advancing green LED technology based on the Indium-Gallium-Nitride system (BU), thus improving conversion efficiencies; (3) employing unique state-of-the-art X-ray, electron and optical spectroscopies with microscopic techniques to learn more about the electronic structure of materials and contacts in LED devices (UNLV College of Science); (4) establishing a UNLV Display Lighting Laboratory staffed with a specialized team of academic researchers, students and industrial partners focused on identifying and implementing engineering solutions for lighting display-related problems; and (5) conducting research, development and demonstration for HSL essential to the resolution of technological barriers to commercialization.

  1. Supported Molten Metal Membranes for Hydrogen Separation

    SciTech Connect (OSTI)

    Datta, Ravindra; Ma, Yi Hua; Yen, Pei-Shan; Deveau, Nicholas; Fishtik, Ilie; Mardilovich, Ivan

    2013-09-30

    We describe here our results on the feasibility of a novel dense metal membrane for hydrogen separation: Supported Molten Metal Membrane, or SMMM.1 The goal in this work was to develop these new membranes based on supporting thin films of low-melting, non- precious group metals, e.g., tin (Sn), indium (In), gallium (Ga), or their alloys, to provide a flux and selectivity of hydrogen that rivals the conventional but substantially more expensive palladium (Pd) or Pd alloy membranes, which are susceptible to poisoning by the many species in the coal-derived syngas, and further possess inadequate stability and limited operating temperature range. The novelty of the technology presented numerous challenges during the course of this project, however, mainly in the selection of appropriate supports, and in the fabrication of a stable membrane. While the wetting instability of the SMMM remains an issue, we did develop an adequate understanding of the interaction between molten metal films with porous supports that we were able to find appropriate supports. Thus, our preliminary results indicate that the Ga/SiC SMMM at 550 ºC has a permeance that is an order of magnitude higher than that of Pd, and exceeds the 2015 DOE target. To make practical SMM membranes, however, further improving the stability of the molten metal membrane is the next goal. For this, it is important to better understand the change in molten metal surface tension and contact angle as a function of temperature and gas-phase composition. A thermodynamic theory was, thus, developed, that is not only able to explain this change in the liquid-gas surface tension, but also the change in the solid-liquid surface tension as well as the contact angle. This fundamental understanding has allowed us to determine design characteristics to maintain stability in the face of changing gas composition. These designs are being developed. For further progress, it is also important to understand the nature of solution and

  2. September 2004 Water Sampling

    Office of Legacy Management (LM)

    ... nickel, radium-226, radium-228, selenium, thorium-230, and uranium in site groundwater. ... The former licensee attributed elevated radium-228 levels at the site to natural thorium ...

  3. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    (Al), chromium (Cr), manganese (Mn), lead (Pb), copper (Cu), zinc (Zn), arsenic (As), boron (B), selenium (Se), molybdenum (Mo), cadmium (Cd), and barium (Ba). Outfalls and...

  4. Microsoft Word - S04268_Mar07 thru Mar08.doc

    Office of Legacy Management (LM)

    ... molybdenum, nitrate, selenium, sulfate, and uranium (DOE 1999). Restoration standards (see Table 1) for these Tuba City Annual Performance Evaluation U.S. Department of Energy Doc. ...

  5. Lead phosphate glass compositions for optical components

    DOE Patents [OSTI]

    Sales, Brian C.; Boatner, Lynn A.

    1987-01-01

    A lead phosphate glass to which has been added indium oxide or scandium oe to improve chemical durability and provide a lead phosphate glass with good optical properties.

  6. B. Y. Ahn, D. J. Lorang, E. B. Duoss and J. A. Lewis Materials...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    displays, and other optoelectronic devices. Sn-doped indium oxide (ITO)-based sol-gel ink was developed for patterning planar, spanning, and three- dimensional TCO...

  7. Photovoltaic Cell Material Basics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Silicon (Si)-including single-crystalline Si, multicrystalline Si, and amorphous Si Polycrystalline Thin Films-including copper indium diselenide (CIS), cadmium telluride (CdTe), ...

  8. Search for: All records | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    ... microscopy and confocal Raman spectroscopy for nanoscale investigations of a ferroelectric-paraelectric phase transition in the copper indium thiophosphate layered ferroelectric. ...

  9. A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

    DOE Patents [OSTI]

    Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2005-03-29

    A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  10. Semiconductor material and method for enhancing solubility of a dopant therein

    DOE Patents [OSTI]

    Sadigh, Babak; Lenosky, Thomas J.; Rubia, Tomas Diaz; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2003-09-09

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  11. GreenStone Technologies LLC | Open Energy Information

    Open Energy Info (EERE)

    Name: GreenStone Technologies LLC Place: Wisconsin Zip: 53719 Product: Developing a copper indium hallium selenide (CIGS) thin-film PV technology, also performs custom contract...

  12. ALSNews Vol. 309

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanostructures Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical...

  13. Odersun AG | Open Energy Information

    Open Energy Info (EERE)

    Odersun AG Jump to: navigation, search Name: Odersun AG Place: Frankfurt, Germany Zip: 15236 Product: German manufacturer of copper indium disulphide on copper tape (CISCuT)...

  14. Unionmet Singapore Limited | Open Energy Information

    Open Energy Info (EERE)

    Place: Singapore Zip: 68805 Product: A manufacturer and recycler of indium - a raw material for CIGS PV and also for most transparent conducting oxides. References: Unionmet...

  15. LightSpin Technologies Inc | Open Energy Information

    Open Energy Info (EERE)

    Yale University, developing new indium phosphide compound semiconductors which may have solar cell applications. Coordinates: 40.020185, -81.073819 Show Map Loading map......

  16. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    superconductivity and superfluidity (1) cooling (1) critical temperature (1) crystallography (1) energy storage (1) epitaxy (1) hardening (1) indium complexes (1) interfacial ...

  17. Method of making V.sub.3 Ga superconductors

    DOE Patents [OSTI]

    Dew-Hughes, David

    1980-01-01

    An improved method for producing a vanadium-gallium superconductor wire having aluminum as a component thereof is disclosed, said wire being encased in a gallium bearing copper sheath. The superconductors disclosed herein may be fabricated under normal atmospheres and room temperatures by forming a tubular shaped billet having a core composed of an alloy of vanadium and aluminum and an outer sheath composed of an alloy of copper, gallium and aluminum. Thereafter the entire billet is swage reduced to form a wire therefrom and heat treated to form a layer of V.sub.3 Ga in the interior of the wire.

  18. PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gallium Arsenide (GaAs) Photovoltaics | Department of Energy 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO SunShot Award Amount: $125,000 Low-cost III-V cells will result in a breakthrough in photovoltaic (PV)

  19. Results from NA60 experiment at the CERN SPS

    SciTech Connect (OSTI)

    Usai, G.; Cicalo, C.; De Falco, A.; Floris, M.; Masoni, A.; Puddu, G.; Serci, S.; Arnaldi, R.; Colla, A.; Cortese, P.; Ferretti, A.; Oppedisano, C.; Averbeck, R.; Drees, A.; Banicz, K.; Castor, J.; Devaux, A.; Force, P.; Manso, F.; Chaurand, B.

    2006-07-11

    The NA60 experiment studies open charm and prompt dimuon production in proton-nucleus and nucleus-nucleus collisions at the CERN SPS. During 2003 the experiment collected data in Indium-Indium collisions at 158 GeV per nucleon. In this paper the first results on low mass dimuons, intermediate mass dimuons and J/{psi} suppression are presented.

  20. SolarTec AG | Open Energy Information

    Open Energy Info (EERE)

    SolarTec AG Place: Munich, Bavaria, Germany Product: Developing a technology it calls Sol*Con- 700x Fresnel concentrators for use with gallium arsenide or germanium cells, also...

  1. Model of Ni-63 battery with realistic PIN structure (Journal...

    Office of Scientific and Technical Information (OSTI)

    RANGE 01-10; GALLIUM NITRIDES; ILLUMINANCE; MONTE CARLO METHOD; NICKEL 63; SCANNING ELECTRON MICROSCOPY Word Cloud More Like This Full Text Journal Articles DOI: 10.10631.4930870

  2. A-15 Superconducting composite wires and a method for making

    DOE Patents [OSTI]

    Suenaga, Masaki; Klamut, Carl J.; Luhman, Thomas S.

    1984-01-01

    A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

  3. Wrapping process for fabrication of A-15 superconducting composite wires

    DOE Patents [OSTI]

    Suenaga, M.; Klamut, C.J.; Luhman, T.S.

    1980-08-15

    A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

  4. Taransys Inc | Open Energy Information

    Open Energy Info (EERE)

    Taransys Inc Jump to: navigation, search Name: Taransys Inc. Place: Ottawa, Ontario, Canada Zip: K2K 2E2 Product: The company specialises in gallium nitride technologies, focussing...

  5. CX-010873: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Ammonothermal Bulk Gallium Nitride Crystal Growth for Energy Efficient Lightning and Power Electronics CX(s) Applied: B3.6 Date: 05/22/2013 Location(s): California Offices(s): Advanced Research Projects Agency-Energy

  6. Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

  7. CX-004937: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Transphorm, Inc. -High Performance Gallium Nitride High Electron Mobility Transistor Modules for Agile Power ElectronicsCX(s) Applied: B3.6Date: 08/05/2010Location(s): CaliforniaOffice(s): Advanced Research Projects Agency - Energy

  8. Hydrological, geochemical, and ecological characterization of Kesterson Reservoir

    SciTech Connect (OSTI)

    Not Available

    1990-06-01

    This report describes Kesterson Reservoir related research activities carried out under a cooperative program between Lawrence Berkeley Laboratory and the Division of Agriculture and Natural Resources at the University of California during FY89. The primary objectives of these investigations are: Predict the extent, probability of the occurrence, and selenium concentrations in surface water of temporary wetland habitat at Kesterson; assess rates and direction of migration of the drainage water plume that seeped into the aquifer under Kesterson; monitor and predict changes in quantity and speciation of selenium in surface soils and vadose zone pore-waters; and develop a comprehensive strategy through soil, water, and vegetation management to safely dissipate the high concentrations of selenium accumulated in Kesterson soils. This report provides an up-date on progress made in each of these areas. Chapter 2 describes results of recent investigations of water table fluctuations and plume migration. Chapter 3 describes results of ongoing monitoring of soil water selenium concentrations and evaporative accumulation of selenium at the soil surface. Chapter 4 describes early results from the soil, water, and vegetation management field trials as well as supporting laboratory and theoretical studies. In Chapter 5, new analytical methods for selenium speciation are described and quality assurance/quality control statistics for selenium and boron are provided. 110 refs., 138 figs., 62 tabs.

  9. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOE Patents [OSTI]

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  10. The new Hg-rich barium indium mercurides BaIn{sub x}Hg{sub 7−x} (x=3.1) and BaIn{sub x}Hg{sub 11−x} (x=0–2.8)

    SciTech Connect (OSTI)

    Wendorff, Marco; Schwarz, Michael; Röhr, Caroline

    2013-07-15

    The title compounds BaIn{sub x}Hg{sub 7−x} (x=3.1(1)) and BaIn{sub x}Hg{sub 11−x} (x=0–2.8) were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures have been determined using single crystal X-ray data. BaIn{sub x}Hg{sub 7−x} (x=3.1(1)) crystallizes in a new structure type (orthorhombic, oC16, space group Cmmm: a=512.02(1), b=1227.68(3), c=668.61(2) pm, Z=2, R1=0.0311). In the structure, the atoms of the three crystallographically different mixed In/Hg positions form planar nets of four-, six- and eight-membered rings. These nets are shifted against each other such that the four-membered rings form empty distorted cubes. The cubes are connected via common edges, corners and folded ladders, which are also found in BaIn{sub 2}/BaHg{sub 2} (KHg{sub 2} structure type) and BaIn (α-NaHg type). The Ba atoms are centered in the eight-membered rings and exhibit an overall coordination number of 20. The [BaM{sub 20}] polyhedra and twice as many distorted [M{sub 8}] cubes tesselate the space. BaIn{sub 2.8}Hg{sub 8.2} (cubic, cP36, space group Pm3{sup ¯}m, a=961.83(1) pm, Z=3, R1=0.0243) is the border compound of the phase width BaIn{sub x}Hg{sub 11−x} of the rare BaHg{sub 11} structure type. In the structure, ideal [M{sub 8}] cubes (at the corners of the unit cell) and BaM{sub 20} polyhedra (at the edges of the unit cell) represent the building blocks comparable to the other new In mercuride. In accordance with the increased In/Hg content, additional M-pure regions appear: the center of the unit cell contains a huge [Hg(1)M(2){sub 12}M(3,4){sub 32}] polyhedron, a Hg-centered cuboctahedron of In/Hg atoms surrounded by a capped cantellated cube of 32 additional M atoms. For both structure types, the bonding situation and the ‘coloring’, i.e. the In/Hg distribution of the polyanionic network, are discussed considering the different sizes of the atoms and the charge distribution (Bader AIM charges), which have been calculated within the framework of FP-LAPW density functional theory. - Graphical abstract: BaIn{sub 2.6}Hg{sub 4.4}: distorted cubes [(In/Hg){sub 8}] (green, like in BaHg{sub 11}), folded ladders (violet, like in BaIn, BaHg{sub 2} and BaIn{sub 2}) and Ba coordination polyhedra [Ba(In/Hg){sub 20}] (blue, like in BaHg{sub 11}). - Highlights: • The Hg-rich In-mercuride BaIn{sub 3.1}Hg{sub 3.9} crystallizes with a singular structure type. • The phase width of the BaHg{sub 11} structure in BaIn{sub x}Hg{sub 11-x} ends at x=2.8. • The relations of both compounds with other alkaline-earth mercurides are outlined. • The Hg/In coloring of the polyanion is discussed considering the structure features. • Bonding aspects are explored using band structure calculations.

  11. Microsoft Word - 08101885 DVP.doc

    Office of Legacy Management (LM)

    ... nickel, radium-226, radium-228, selenium, thorium-230, and uranium in site groundwater. ... naturally occurring thorium ore in the Main Sand unit (the primary ore body at the site). ...

  12. Surface-active element effects on the shape of GTA, laser, and electron-beam welds

    SciTech Connect (OSTI)

    Heiple, C.R.; Roper, J.R.; Stagner, R.T.; Aden, R.J.

    1983-03-01

    Laser and electron-beam welds were passed across selenium-doped zones in 21-6-9 stainless steel. The depth/width (d/w) ratio of a defocused laser weld with a weld pool shape similar to a GTA weld increased by over 200% in a zone where 66 ppm selenium had been added. Smaller increases were observed in selenium-doped zones for a moderately defocused electron beam weld with a higher d/w ratio in undoped base metal. When laser or electron beam weld penetration was by a keyhole mechanism, no change in d/w ratio occurred in selenium-doped zones. The results confirm the surface-tension-driven fluid-flow model for the effect of minor elements on GTA weld pool shape. Other experimental evidence bearing on the effect of minor elements on GTA weld penetration is summarized.

  13. Liquid precursor for deposition of copper selenide and method of preparing the same

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; Franciscus Antonius Maria Van Hest, Marinus; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

    2015-09-08

    Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed.

  14. S

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    forma,on of nanoscale lamellar pa6erns during the growth selenium---tellurium ( Se---Te) a lloys. The illumina8on condi8ons (intensity, wavelength, polariza,on and incident...

  15. PERSONNEL NEUTRON DOSIMETER

    DOE Patents [OSTI]

    Fitzgerald, J.J.; Detwiler, C.G. Jr.

    1960-05-24

    A description is given of a personnel neutron dosimeter capable of indicating the complete spectrum of the neutron dose received as well as the dose for each neutron energy range therein. The device consists of three sets of indium foils supported in an aluminum case. The first set consists of three foils of indium, the second set consists of a similar set of indium foils sandwiched between layers of cadmium, whereas the third set is similar to the second set but is sandwiched between layers of polyethylene. By analysis of all the foils the neutron spectrum and the total dose from neutrons of all energy levels can be ascertained.

  16. Electrochemical power-producing cell. [Li/Se

    DOE Patents [OSTI]

    Cairns, E.J.; Chilenskas, A.A.; Steunenberg, R.K.; Shimotake, H.

    1972-05-30

    An electrochemical power-producing cell including a molten lithium metal anode, a molten selenium metal cathode, a paste electrolyte separating the anode from the cathode, an anode current collector, and a single layer of niobium expanded metal formed in corrugated shape as cathode current collector is described. In addition, means are provided for sealing the anode and the cathode from loss of lithium and selenium, respectively, and an insulator is provided between the anode housing and the paste electrolyte disk.

  17. 'Bugs' used to treat FGD wastewater

    SciTech Connect (OSTI)

    Blankinship, S.

    2009-09-15

    Tough regulation of heavy metals may justify a bioreactor approach in addition to chemical treatment of FGD wastewater. Two of Duke Energy' coal-fired plants, Belews Creek and Allen (in North Carolina) have installed new biological reactor systems to increase selenium removal to levels not achievable by existing scrubber waste water systems. The ABMet system removes nitrate and selenium in a single step. Progress Energy has installed the system at Roxboro and Mayo Stations, also in North Carolina. 1 fig., 2 photos.

  18. Preliminary materials assessment for the Satellite Power System (SPS)

    SciTech Connect (OSTI)

    Teeter, R.R.; Jamieson, W.M.

    1980-01-01

    Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

  19. Group III-nitride thin films grown using MBE and bismuth

    DOE Patents [OSTI]

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  20. Group III-nitride thin films grown using MBE and bismuth

    DOE Patents [OSTI]

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.