Sample records for indium gallium selenide

  1. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

    2011-11-15T23:59:59.000Z

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  2. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    DOE Patents [OSTI]

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04T23:59:59.000Z

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  3. Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film Deposition by Laser Back Ablation. Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film...

  4. Crystal chemistry and self-lubricating properties of monochalcogenides gallium selenide and tin selenide

    SciTech Connect (OSTI)

    Erdemir, A.

    1993-02-01T23:59:59.000Z

    This paper describes the fundamentals of the crystal chemistry and self-lubricating mechanisms of two monochalcogenides; tin selenide and gallium selenide. Specifically, it enumerates their inter-atomic array and bond structure in crystalline states, and correlates this fundamental knowledge with their self-lubricating capacity. Friction tests assessing the self-lubricating performance of gallium and tin selenides were carried out on a pin-on-disk machine. Specifically, large crystalline pieces of gallium selenide and tin selenide were cut and cleaved into flat squares and subsequently rubbed against the sapphire balls. In another case, the fine powders (particle size {approx} 50--100 {mu}m) of gallium selenide and tin selenide were manually fed into the sliding interfaces of 440C pins and 440C disks. For the specific test conditions explored, it was found that the friction coefficients of the sapphire/gallium selenide and sapphire/tin selenide pairs were {approx} 0.23 and {approx} 0.35, respectively. The friction coefficients of 440C pin/440C disk test pairs with gallium selenide and tin selenide powders were on the orders of {approx} 0.22 and {approx} 0.38, respectively. For comparison, a number of parallel friction tests were performed with MoS{sub 2} powders and compacts and the results of these tests were also reported. The friction data together with the crystal-chemical knowledge and the electron microscopic evidence supported the conclusion that the lubricity and self-lubricating mechanisms of these solids are closely related to their crystal chemistry and the nature of interlayer bonding.

  5. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08T23:59:59.000Z

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  6. Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates

    DOE Patents [OSTI]

    Eser, Erten; Fields, Shannon

    2012-05-01T23:59:59.000Z

    A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

  7. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2000-01-01T23:59:59.000Z

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  8. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2002-01-01T23:59:59.000Z

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  9. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01T23:59:59.000Z

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  10. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    conversion efficiency of solar cells made from this material [1]. One of the special qualities of the CIGS improve the solar cell performance. In many of the different CIGS fabrication techniques, an in depthDiffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A

  11. aluminium gallium indium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

  12. aluminum gallium indium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

  13. amorphous indium gallium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

  14. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01T23:59:59.000Z

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  15. Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

    E-Print Network [OSTI]

    Woolf, Alexander; Aharanovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel A; Hu, Evelyn L

    2014-01-01T23:59:59.000Z

    Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest ...

  16. Tripodal aminophenolate ligand complexes of aluminum(III), gallium(III), and indium(III) in water

    SciTech Connect (OSTI)

    Caravan, P.; Orvig, C. [Univ. of British Columbia, Vancouver (Canada)] [Univ. of British Columbia, Vancouver (Canada)

    1997-01-15T23:59:59.000Z

    This article focuses on the development of radiopharmaceuticals using new chelators of gallium and indium. The radionuclide kinetics and demetalation kinetics are of great consideration. This work explored the effects of ligand backbone variations on the selectivity of multidentate aminophenolate ligands among the trivalent metal ions Al(III), Ga(III) and In(III) in water. 54 refs., 16 figs., 3 tabs.

  17. In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

    SciTech Connect (OSTI)

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

    2013-07-01T23:59:59.000Z

    The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

  18. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-06-09T23:59:59.000Z

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  19. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

    1999-02-16T23:59:59.000Z

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  20. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shivaraman, Ravi; Speck, James S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2014-09-21T23:59:59.000Z

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  1. High-performance amorphous gallium indium zinc oxide thin-film transistors through N{sub 2}O plasma passivation

    SciTech Connect (OSTI)

    Park, Jaechul; Kim, Sangwook; Kim, Changjung; Kim, Sunil; Song, Ihun; Yin, Huaxiang; Kim, Kyoung-Kok; Lee, Sunghoon; Hong, Kiha; Park, Youngsoo [Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712 (Korea, Republic of); Lee, Jaecheol; Jung, Jaekwan; Lee, Eunha [Analytical Engineering Center, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712 (Korea, Republic of); Kwon, Kee-Won [Department of Semiconductor Systems Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-Do 440-746 (Korea, Republic of)

    2008-08-04T23:59:59.000Z

    Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO{sub 2} passivation layer. To prevent such damages, N{sub 2}O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO{sub 2} deposition. N{sub 2}O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37 cm{sup 2}/V s, a threshold voltage of 0.1 V, a subthreshold swing of 0.25 V/decade, and an I{sub on/off} ratio of 7.

  2. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    SciTech Connect (OSTI)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15T23:59:59.000Z

    Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  3. Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint

    SciTech Connect (OSTI)

    Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

    2012-08-01T23:59:59.000Z

    Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

  4. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    SciTech Connect (OSTI)

    Wissman, J., E-mail: jwissman@andrew.cmu.edu [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Finkenauer, L. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Deseri, L. [DICAM, Department of Mechanical, Civil and Environmental Engineering, University of Trento, via Mesiano 77 38123 Trento (Italy); TMHRI-Department of Nanomedicine, The Methodist Hospital Research Institute, 6565 Fannin St., MS B-490 Houston, Texas 77030 (United States); Mechanics, Materials and Computing Center, CEE and ME-CIT, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Majidi, C. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Robotics Institute and Department of Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-10-14T23:59:59.000Z

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage ? to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ?. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of ?. Based on this theory, we predict a dependency of ? on ? that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  5. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect (OSTI)

    Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

    2014-07-21T23:59:59.000Z

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100?°C. The a-IGZO TFT exhibit a mobility of 5.13?cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4?mm (strain?=?1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10?V for 1500?s. Thus, this technology is suitable for use in flexible displays.

  6. Electrical and Optical Properties of Transparent Conducting Homologous Compounds in the IndiumGalliumZinc Oxide System

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    , smart windows, and solar cells. Tin-doped indium oxide (ITO) is the commercial TCO of choice. ITO thin TRANSPARENT conducting oxides (TCOs) are used in a wide variety of applications, such as flat-panel displays, and lower cost are desired for use in demanding ap- plications such as next-generation flat-panel displays

  7. Indium and gallium oxynitrides prepared in the presence of Zn{sup 2+} by ammonolysis of the oxide precursors obtained via the citrate route

    SciTech Connect (OSTI)

    Miyaake, Azumi; Masubuchi, Yuji; Takeda, Takashi [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)] [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan); Kikkawa, Shinichi, E-mail: kikkawa@eng.hokudai.ac.jp [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)] [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)

    2010-04-15T23:59:59.000Z

    Ammonia nitridation of indium and gallium oxide precursors obtained through a soft solution route led to their oxynitrides [In{sub 0.97}{open_square}{sub 0.03}][N{sub 0.92}O{sub 0.08}] at 660 {sup o}C and [Ga{sub 0.89}{open_square}{sub 0.11}][N{sub 0.66}O{sub 0.34}] at 850 {sup o}C, respectively, where {open_square} refers to a In or Ga vacancy. Cation vacancies in their wurtzite-type lattice were eliminated in similar preparations with the co-presence of Zn{sup 2+} by forming complete solid solutions of (InN){sub 1-x}(ZnO){sub x} and (GaN){sub 1-y}(ZnO){sub y}. The optical absorption edge shape was found to be relatively steep at the solid solution limits of x {approx} 0.23 and y {approx} 0.33 compared to the case without zinc.

  8. 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim5742 www.advmat.de

    E-Print Network [OSTI]

    -generation photo- voltaics, such as copper indium gallium selenide (CIGS)[5,6] and copper zinc tin sulfide (CZTS

  9. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect (OSTI)

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-08-04T23:59:59.000Z

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%)?+?ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  10. arsenide gallium nitride: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lundberga,*, J. Lua , A Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been with a larger number of vacancies, that facilitates...

  11. EA-1686: Department of Energy Loan Guarantee to SoloPower Inc. for the Electrodeposition-based Copper indium gallium selenide (CIGS) Solar Technology Manufacturing Facility near San Jose, California

    Broader source: Energy.gov [DOE]

    EA cancelled due to a change in project scope; DOE prepared a categorical exclusion determination (8/15/11).

  12. Design and Synthesis of Plasmonic Core/Shell Nanorods for Light Trapping in Organic Photo-Voltaics, Non-Linear Optics and Photo-Thermal Tumor Therapy

    E-Print Network [OSTI]

    Jankovic, Vladan

    2013-01-01T23:59:59.000Z

    solar cells, developed in the 1980s and based on amorphous or polycrystalline silicon (Si), copper indium gallium (di)selenide (CIGS), and

  13. Morphology Control of Layer-Structured Gallium Selenide Nanowires

    E-Print Network [OSTI]

    Cui, Yi

    for stable photocathodes and battery electrodes. We report the controlled synthesis and characterization cells3 and solid-state batteries.4 Their one-dimensional nanowire (NW) structures may afford better

  14. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Structural vacancies are a source of numerous interesting structural, electronic, and optical properties, and materials scientists often rely them as an important building...

  15. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron SpinPrincetonUsing Maps to Predict4Vacancy announcements Alumni

  16. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron SpinPrincetonUsing Maps to Predict4Vacancy announcements

  17. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron SpinPrincetonUsing Maps to Predict4Vacancy announcementsVacancy-Induced

  18. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron SpinPrincetonUsing Maps to Predict4Vacancy

  19. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron SpinPrincetonUsing Maps to Predict4VacancyVacancy-Induced Nanoscale Wire

  20. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del SolStrengthening aTurbulenceUtilize Available Resources Print AsVacancy-Induced

  1. Copper Indium Gallium Diselenide | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: Theof"Wave theJuly 30, 2013Department of Energy CoordinatingPhotovoltaics

  2. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    SciTech Connect (OSTI)

    Fitzgerald, M. [ed.

    1993-05-01T23:59:59.000Z

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  3. Lead selenide nanowire solar cells via LPNE and its new found derivatives

    E-Print Network [OSTI]

    Hujdic, Justin

    2012-01-01T23:59:59.000Z

    Abstract of the Dissertation Lead selenide nanowire solarOF CALIFORNIA, MERCED Lead selenide nanowire solar cells viatrapping…………………………………………………………16 2. Lead Selenide Nanowires

  4. EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes

    E-Print Network [OSTI]

    EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes and Technology Clear Water Bay, Kowloon, Hong Kong Abstract Indium-tin oxide anodes capped with certain oxides-emitting diodes (OLEDs). The oxides of tin, zinc, praseodymium, yttrium, gallium, terbium and titanium have been

  5. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing

    E-Print Network [OSTI]

    were exported to Canada for processing. Two companies, one in New York and the other in Rhode Island gallium diselenide (CIGS) solar cells require approximately 50 metric tons of indium to produce 1 gigawatt of solar power. Research was underway to develop a low-cost manufacturing process for flexible CIGS solar

  6. May 20, 2010 Growing gallium arsenide in thick multilayer stacks could make a big

    E-Print Network [OSTI]

    Rogers, John A.

    of photovoltaics and optoelectronic devices such as near-infrared (NIR) imagers looks set to become significantly material systems such as gallium nitride and indium phosphide (Nature 465 329). "We can generate compound of substrates, including glass and plastic. In photovoltaics, we expect the cost reductions to be significant

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Indium Under the Nanoscope In this work, Lee et al. investigated the small-scale plastic deformation of indium nanopillars, a previously unstudied material and crystal...

  8. Sputtered Molybdenum Bilayer Back Contact for Copper Indium Diselenide-Based Polycrystalline Thin-Film Solar Cells

    E-Print Network [OSTI]

    Scofield, John H.

    of the CIS or CIGS solar cell structure (not to scale). In these investigations, however, the metal layers-Film Solar Cells John H. Scofield1, A. Duda, and D. Albin National Renewable Energy Laboratory, 1617 Cole-of-the-art polycrystalline copper indium gallium diselenide solar cells with good results. Thin Solid Films, 260 (1), pp. 26

  9. Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles

    E-Print Network [OSTI]

    Hsieh, Jennifer Chia-Jen

    2010-01-01T23:59:59.000Z

    A low-temperature, ambient pressure solution synthesis of colloidal InN nanoparticles is presented. This synthesis utilizes a previously dismissed precursor and results in individual, non-aggregated nanoparticles with ...

  10. Efficient solution-processed small molecule: Cadmium selenide quantum dot bulk heterojunction solar cells

    SciTech Connect (OSTI)

    Gupta, Vinay, E-mail: drvinaygupta@netscape.net [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India) [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India); Department of Physics, University of California, Santa Barbara, California 93106 (United States); Upreti, Tanvi; Chand, Suresh [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India)] [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India)

    2013-12-16T23:59:59.000Z

    We report bulk heterojunction solar cells based on blends of solution-processed small molecule [7,7?-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b?]dithiophene-2,6-diyl) bis(6-fluoro-4-(5?-hexyl-[2,2?-bithiophen]-5yl)benzo[c] [1,2,5] thiadiazole)] p-DTS(FBTTh{sub 2}){sub 2}: Cadmium Selenide (CdSe) (70:30, 60:40, 50:50, and 40:60) in the device configuration: Indium Tin Oxide /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/p-DTS(FBTTh{sub 2}){sub 2}: CdSe/Ca/Al. The optimized ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe::60:40 leads to a short circuit current density (J{sub sc})?=?5.45?mA/cm{sup 2}, open circuit voltage (V{sub oc})?=?0.727?V, and fill factor (FF)?=?51%, and a power conversion efficiency?=?2.02% at 100 mW/cm{sup 2} under AM1.5G illumination. The J{sub sc} and FF are sensitive to the ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe, which is a crucial factor for the device performance.

  11. Pressure-induced structural transformations in cadmium selenide nanorods

    E-Print Network [OSTI]

    Southern California, University of

    transformations are observed from wurtzite to a single domain rocksalt crystal phase. The simulation results atomic shifts within the 0001 plane of the wurtzite structure and is similar to the one observed from four- fold wurtzite WZ to six-fold RS coordinated structures in Cadmium selenide CdSe , are also

  12. An interatomic pair potential for cadmium selenide Eran Rabani

    E-Print Network [OSTI]

    Rabani, Eran

    in all three crystal structures: wurtzite, zinc blende, and rocksalt. Using the new pair potential we have studied the pressure-induced phase transition from the fourfold-coordinate wurtzite structure for wurtzite cadmium selenide.6 In this paper we derive a set of interatomic pair poten- tials for cadmium

  13. Electrospun Gallium Nitride Nanofibers

    SciTech Connect (OSTI)

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia [University of Puerto Rico at Humacao, Humacao (Puerto Rico); Campo, Eva [Centre Nacional de Microelectronica, Barcelona (Spain); Santiago, Jorge J. [University of Pennsylvania, Philadelphia (United States)

    2009-04-19T23:59:59.000Z

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH{sub 3} flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  14. Gallium Safety in the Laboratory

    SciTech Connect (OSTI)

    Cadwallader, L.C.

    2003-05-07T23:59:59.000Z

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  15. The unexpected properties of alkali metal iron selenide superconductors

    SciTech Connect (OSTI)

    Dagotto, Elbio R [ORNL

    2013-01-01T23:59:59.000Z

    The iron-based superconductors that contain FeAs layers as the fundamental building block in the crystal structures have been rationalized in the past using ideas based on the Fermi surface nesting of hole and electron pockets when in the presence of weak Hubbard U interactions. This approach seemed appropriate considering the small values of the magnetic moments in the parent compounds and the clear evidence based on photoemission experiments of the required electron and hole pockets. However, recent results in the context of alkali metal iron selenides, with generic chemical composition AxFe2ySe2 (A alkali metal element), have challenged those previous ideas since at particular compositions y the low-temperature ground states are insulating and display antiferromagnetic order with large iron magnetic moments. Moreover, angle-resolved photoemission studies have revealed the absence of hole pockets at the Fermi level in these materials. The present status of this exciting area of research, with the potential to alter conceptually our understanding of the ironbased superconductors, is here reviewed, covering both experimental and theoretical investigations. Other recent related developments are also briefly reviewed, such as the study of selenide two-leg ladders and the discovery of superconductivity in a single layer of FeSe. The conceptual issues considered established for the alkali metal iron selenides, as well as several issues that still require further work, are discussed.

  16. New quinternary selenides: Syntheses, characterizations, and electronic structure calculations

    SciTech Connect (OSTI)

    Chung, Ming-Yan; Lee, Chi-Shen, E-mail: chishen@mail.nctu.edu.tw

    2013-06-01T23:59:59.000Z

    Five quinternary selenides, Sr?.??Y?.??Ge?.??Sb?.??Se? (I), Sr?.??La?.??Ge?.??Sb?.??Se? (II), Sr?.??La?.??Sn?.??Bi?.??Se? (III), Ba?.?? La?.?? Sn?.??Sb?.??Se? (IV), and Ba?.?? La?.??Sn?.??Bi?.??Se? (V), were synthesized by solid-state reaction in fused silica tubes. These compounds are isostructural and crystallize in the Sr?GeSb?Se? structural-type, which belongs to the orthorhombic space group Pnma (no. 62). Three structural units, 1?[MSe?], 1?[M?Se??] (M=Tt, Pn) and M´ (M´=groups II and III element), comprise the entire one-dimensional structure, separated by M´. Measurements of electronic resistivity and diffused reflectance suggest that IV and V have semiconducting properties. Electronic structure calculations confirm the site preferences of Sr/La element discovered by crystal structure refinement. - Graphical abstract: Quinternary selenides Ae?.??M?.??Tt?.??Pn?.??Se? (Ae, M, Tt, Pn=Sr/Ba, Y/La, Ge/Sn, Sb/Bi) were synthesized and their site preferences were characterized by single-crystal X-ray diffraction and electronic structure calculation. Highlights: • Five new quinternary selenides were synthesized and characterized. • Structural units, 1?[MSe?] and 1?[M?Se??] (M=Tt, Pn), construct the one-dimensional structure. • Calculations of electronic structure confirm site preference of Sr/La sites.

  17. Potential effects of gallium on cladding materials

    SciTech Connect (OSTI)

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01T23:59:59.000Z

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  18. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

    1997-01-01T23:59:59.000Z

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  19. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12T23:59:59.000Z

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  20. INDIUM--1997 37.1 By Robert D. Brown, Jr.

    E-Print Network [OSTI]

    INDIUM--1997 37.1 INDIUM By Robert D. Brown, Jr. There was no known production of indium at domestic mines, and none was recovered from ores in the United States in 1997. Domestic indium production and Rhode Island, were the major producers of indium metal and indium products in 1997. Several smaller

  1. Local environment and composition of magnesium gallium layered...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR Local environment and composition of magnesium gallium...

  2. Gallium-67 complexes as radioactive markers to assess gastric and colonic transit

    SciTech Connect (OSTI)

    Bellen, J.C.; Chatterton, B.E.; Penglis, S.; Tsopelas, C. [Royal Adelaide Hospital (Australia)

    1995-03-01T23:59:59.000Z

    Constipation and gastroparesis are gastrointestinal tract disorders that can be assessed by using radioactive markers in conjunction with scintigraphic techniques. Indium-111-DTPA is the radiopharmaceutical of choice for treating colonic transit in constipated patients, but it is an expensive product and its availability has been unreliable. Indium-113m-DTPA was the tracer used in our study to determine the liquid gastric emptying rate in dual-isotope solid-liquid emptying studies, however, cessation of the {sup 113}Sn/{sup 113m}In generator production makes it unavailable. Thus, development of alternative tracers to {sup 111}In-DTPA and {sup 113m}In-DTPA was essential. Gallium-67-citrate and {sup 67}Ga-EDTA were compared to {sup 111}In-DTPA to assess their efficacy for exclusive retention in the GI tract. These markers were orally administered into rats and their three-day cumulative fecal excretion, urine excretion and carcass retention were measured. An in vitro gastric emptying model was used to determine liquid phase partitioning of {sup 113m}In-DTPA, {sup 67}Ga-citrate and {sup 67}Ga-EDTA at 37{degrees}. Gallium-67-citrate was predominantly excreted in the feces (97.2% {+-} 0.2%) after three days, with negligible urine excretion (0.1% {+-} 0.0%) and carcass retention (0.6% {+-} 0.2%). These results are analogous to those obtained for {sup 111}In-DTPA for fecal excretion (96.7% {+-} 2.6%), urine excretion (0.6% {+-} 0.0%) and retention in the carcass (0.2% {+-} 0.0%). Gallium-67-EDTA showed similar partitioning in the liquid phase of the gastric emptying model compared with {sup 113m}In-DTPA. Gallium-67-citrate is an economical and readily available alternative to {sup 111}In-DTPA as a colonic transit radiopharmaceutical. Gallium-67-EDTA is also an alternative to {sup 113m}In-DTPA for assessing liquid-phase emptying in a dual-isotope solid/liquid gastric emptying study. 17 refs., 3 figs., 2 tabs.

  3. John Tyler McGoffin 830 Mathews St. jtmcgoffin@gmail.com Fort Collins, CO 80521

    E-Print Network [OSTI]

    Sites, James R.

    and Characterization of Thin Film photovoltaic devices including Current Density Voltage (JV), Quantum Efficiency (QETe) and Copper Indium Gallium diSelenide (CIGS) thin film photovoltaic devices using Close Space Sublimation (CSS approachable and easy to talk to #12;Employment: Founder January 2014 - Present Photovoltaic Imaging Systems

  4. COMMUNICATION www.MaterialsViews.com

    E-Print Network [OSTI]

    A, Weinheim (1 of 7) 1301916wileyonlinelibrary.com Improved Cu2O-Based Solar Cells Using Atomic Layer cell materials including copper indium gallium selenide (CIGS).[16] In the past, chemical treatments in enhancements of solar cell performance.[5,7,18] However, even if the surface treatments remove the CuO layer

  5. Structural and electronic properties of -In2X3 (X=O, S, Se, Te) using ab initio calculations

    E-Print Network [OSTI]

    Khare, Sanjay V.

    by NREL [1]. CdS is one of the important layers in fabricating CIGS solar cells but poses ecological and environmentally friendly copper­indium­gallium­selenide solar cells and molecules. Here we have studied been investigated. © 2011 Elsevier B.V. All rights reserved. Introduction Cu­In­Ga­S (CIGS) based solar

  6. Micropatterning of Proteins and Mammalian Cells on Indium Tin Oxide

    E-Print Network [OSTI]

    Revzin, Alexander

    Micropatterning of Proteins and Mammalian Cells on Indium Tin Oxide Sunny S. Shah, Michael C and electrochemical activation to create micropatterned cocultures on indium tin oxide (ITO) substrates applications in tissue engineering and biosensing. KEYWORDS: indium tin oxide · photolithography · switchable

  7. Viscoelastic DampingViscoelastic Damping Characteristics of Indium-Tin/Characteristics of Indium-Tin/SiCSiC

    E-Print Network [OSTI]

    Swan Jr., Colby Corson

    1 Viscoelastic DampingViscoelastic Damping Characteristics of Indium-Tin/Characteristics of Indium-Tin Approach: · Based on past experience, indium-tin has well- characterized stiffness/damping. · Fabricate

  8. On the solar abundance of indium

    E-Print Network [OSTI]

    N. Vitas; I. Vince; M. Lugaro; O. Andriyenko; M. Gosic; R. J. Rutten

    2007-11-14T23:59:59.000Z

    The generally adopted value for the solar abundance of indium is over six times higher than the meteoritic value. We address this discrepancy through numerical synthesis of the 451.13 nm line on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure and Zeeman splitting in detail. The results, as well as a re-appraisal of indium nucleosynthesis, suggest that the solar indium abundance is close to the meteoritic value, and that some unidentified ion line causes the 451.13 nm feature in the quiet-sun spectrum.

  9. Sandia National Laboratories: indium tin oxide

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    indium tin oxide Sandian Selected for Outstanding Engineer Award On December 10, 2014, in Energy, Materials Science, News, News & Events, Photovoltaic, Renewable Energy, Research &...

  10. Highly efficient blue organic light emitting devices with indium...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    efficient blue organic light emitting devices with indium-free transparent anode on flexible substrates. Highly efficient blue organic light emitting devices with indium-free...

  11. Recovery of gallium from aluminum industry residues

    SciTech Connect (OSTI)

    Carvalho, M.S.; Neto, K.C.M.; Nobrega, A.W.; Medeiros, J.A.

    2000-01-01T23:59:59.000Z

    A procedure is proposed to recover gallium from flue dust aluminum residues produced in plants by using solid-phase extraction with a commercial polyether-type polyurethane foam (PUF). Gallium can be separated from high concentrations of aluminum, iron, nickel, titanium, vanadium, copper, zinc, sulfate, fluoride, and chloride by extraction with PUF from 3 M sulfuric acid and 3 M sodium chloride concentration medium with at least a 92% efficiency. Gallium backextraction was fast and quantitative with ethanol solution. In all recovery steps commercial-grade reagents could be used, including tap water. The recovered gallium was precipitated with sodium hydroxide solution, purified by dissolution and precipitation, calcinated, and the final oxide was 98.6% pure.

  12. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah

    E-Print Network [OSTI]

    58 GALLIUM (Data in kilograms of gallium content unless otherwise noted) Domestic Production 98% of domestic gallium consumption. About 67% of the gallium consumed was used in integrated and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah recovered

  13. Au-free Ohmic Contacts to Gallium Nitride and Graphene 

    E-Print Network [OSTI]

    Ravikirthi, Pradhyumna

    2014-08-10T23:59:59.000Z

    This work deals with Au-free contact metallization schemes for gallium nitride (GaN) and graphene semiconductors. Graphene and gallium nitride are promising materials that can potentially be integrated together in the near future for high frequency...

  14. Au-free Ohmic Contacts to Gallium Nitride and Graphene

    E-Print Network [OSTI]

    Ravikirthi, Pradhyumna

    2014-08-10T23:59:59.000Z

    This work deals with Au-free contact metallization schemes for gallium nitride (GaN) and graphene semiconductors. Graphene and gallium nitride are promising materials that can potentially be integrated together in the near future for high frequency...

  15. Effect of Gallium Nitride Template Layer Strain on the Growth...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gallium Nitride Template Layer Strain on the Growth of InxGa1-xNGaN Multiple Quantum Well Light Emitting Diodes. Effect of Gallium Nitride Template Layer Strain on the Growth of...

  16. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from a NewCuneo Matthew1,Mechanical Behavior of Indium

  17. Enhancement of thermoelectric figure-of-merit by resonant states of aluminium doping in lead selenide

    E-Print Network [OSTI]

    Zhang, Qinyong

    By adding aluminium (Al) into lead selenide (PbSe), we successfully prepared n-type PbSe thermoelectric materials with a figure-of-merit (ZT) of 1.3 at 850 K. Such a high ZT is achieved by a combination of high Seebeck ...

  18. Atomistic mechanisms for wurtzite-to-rocksalt structural transformation in cadmium selenide under pressure

    E-Print Network [OSTI]

    Southern California, University of

    Atomistic mechanisms for wurtzite-to-rocksalt structural transformation in cadmium selenide under transformation between the fourfold-coordinated wurtzite structure and the sixfold-coordinated rock- salt of the wurtzite structure. The energy barrier for the transformation is found to be about 0.13 e

  19. Gate-Dependent Carrier Diffusion Length in Lead Selenide Quantum Dot Field-Effect Transistors

    E-Print Network [OSTI]

    Yu, Dong

    -generation solar panels. Strongly confined QDs such as lead selenide (PbSe) also have the potential to benefit from- generation photovoltaic devices and sensitive photodetec- tors.1-3 The potential for low fabrication cost improvements are still necessary for QD solar cells to compete with commercial technologies. In particular

  20. amorphous indium-gallium-zinc oxide: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: alloy of composition correspond- ing to the metallic components of the superconduct- ing oxides respectivement. Abstract. - Previous quenching experiments on 2212...

  1. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01T23:59:59.000Z

    Gallium Nitride Doped With Europium," J. Appl. Phys. , 95Electroluminescence of Europium-doped Gallium Oxide ThinLuminescence Properties of Europium– terbium Double

  2. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  3. Pulmonary gallium-67 uptake in amiodarone pneumonitis

    SciTech Connect (OSTI)

    van Rooij, W.J.; van der Meer, S.C.; van Royen, E.A.; van Zandwijk, N.; Darmanata, J.I.

    1984-02-01T23:59:59.000Z

    Three patients are presented suffering from interstitial pneumonitis caused by amiodarone. Pulmonary Ga-67 uptake occurred in all three. There appeared to be a discrepancy between the scintigraphic and radiographic findings in two patients. Gallium-67 lung scintigraphy may offer an early, sensitive indicator for amiodarone pneumonitis.

  4. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02T23:59:59.000Z

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  5. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2005. One company in Utah

    E-Print Network [OSTI]

    66 GALLIUM (Data in kilograms of gallium content unless otherwise noted) Domestic Production, [(703) 648-7719, dkramer@usgs.gov, fax: (703) 648-7975] #12;67 GALLIUM Consolidation of companies and Use: No domestic primary gallium recovery was reported in 2005. One company in Utah recovered

  6. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1998. Two companies in

    E-Print Network [OSTI]

    66 GALLIUM (Data in kilograms of gallium content, unless otherwise noted) Domestic Production A. Kramer [(703) 648-7719, dkramer@usgs.gov, fax: (703) 648-7722] #12;67 GALLIUM Events, Trends and Use: No domestic primary gallium recovery was reported in 1998. Two companies in Oklahoma and Utah

  7. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28T23:59:59.000Z

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  8. Interactions of zircaloy cladding with gallium -- 1997 status

    SciTech Connect (OSTI)

    Wilson, D.F.; DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.

    1997-11-01T23:59:59.000Z

    A four phase program has been implemented to evaluate the effect of gallium in mixed oxide (MOX) fuel derived from weapons grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in LWR. This graded, four phase experimental program will evaluate the performance of prototypic Zircaloy cladding materials against: (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of an initial series of tests for phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement (LME), and (3) corrosion mechanical. These tests are designed to determine the corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge} 300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (in parts per million) of gallium in the MOX fuel. While continued migration of gallium into the initially formed intermetallic compound results in large stresses that can lead to distortion, this is also highly unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

  9. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates. Peak internal quantum efficiency (IQE) values of greater than 80% are...

  10. Photonuclear Reaction Cross Sections for Gallium Isotopes

    E-Print Network [OSTI]

    Serkan Akkoyun; Tuncay Bayram

    2014-09-08T23:59:59.000Z

    The photon induced reactions which are named as photonuclear reactions have a great importance in many field of nuclear, radiation physics and related fields. Since we have planned to perform photonuclear reaction on gallium target with bremmstrahlung photons from clinical linear accelerator in the future, the cross-sections of neutron (photo-neutron ({\\gamma},xn)) and proton (photo-proton ({\\gamma},xn)) productions after photon activation have been calculated by using TALYS 1.2 computer code in this study. The target nucleus has been considered gallium which has two stable isotopes, 69Ga and 71Ga. According to the results, we have seen that the calculations are in harmony in the limited literature values. Furthermore, the pre-equilibrium and compound process contributions to the total cross-section have been investigated.

  11. Gallium nanoparticles grow where light is

    E-Print Network [OSTI]

    K. F. MacDonald; W. S. Brocklesby; V. I. Emelyanov; V. A. Fedotov; S. Pochon; K. J. Ross; G. Stevens; N. I. Zheludev

    2001-05-15T23:59:59.000Z

    The study of metallic nanoparticles has a long tradition in linear and nonlinear optics [1], with current emphasis on the ultrafast dynamics, size, shape and collective effects in their optical response [2-6]. Nanoparticles also represent the ultimate confined geometry:high surface-to-volume ratios lead to local field enhancements and a range of dramatic modifications of the material's properties and phase diagram [7-9]. Confined gallium has become a subject of special interest as the light-induced structural phase transition recently observed in gallium films [10, 11] has allowed for the demonstration of all-optical switching devices that operate at low laser power [12]. Spontaneous self-assembly has been the main approach to the preparation of nanoparticles (for a review see 13). Here we report that light can dramatically influence the nanoparticle self-assembly process: illumination of a substrate exposed to a beam of gallium atoms results in the formation of nanoparticles with a relatively narrow size distribution. Very low light intensities, below the threshold for thermally-induced evaporation, exert considerable control over nanoparticle formation through non-thermal atomic desorption induced by electronic excitation.

  12. GALLIUM--2001 29.1 By Deborah A. Kramer

    E-Print Network [OSTI]

    the largest application for gallium, with optoelectronic devices [mostly laser diodes and light near the town of McDermitt in Humboldt County, NV. The company began initial drilling in October and announced preliminary results in November. According to the drilling results, gallium concentrations over

  13. Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system

    E-Print Network [OSTI]

    with Mn:Ga ratio between 1:1 to 1.5:1 is grown on wurtzite gallium nitride and scandium nitride substrates. Results suggest that for growth on wurtzite GaN, Ga-polar surface promotes quicker interface formation epitaxially on top of wide band-gap Ga-polar wurtzite GaN(0001), with controllable magnetism by adjusting

  14. A microwave spectroscopic study of the reaction of cyanogen bromide and hydrogen selenide

    E-Print Network [OSTI]

    Gardner, John Berten

    1958-01-01T23:59:59.000Z

    I I I I I I I I FIGURE 5 I I I rVoz Fre~eho+ Z3r c'P' 0. 8 o. Io o. Q o. 2 the system. This was then repeated for the hydrogen selenide storage flask. Each flask was then filled. to a pressure which would give the desired mixture when.... , The Kinetics of Chemical Change in Gaseous Systems, (1933) Oxford University Press, London. 8. Hughes, R. H. , New York Academy of Science Annales, 55, 872 (1952) 9. Howard, R. R. and Smith, W. V. , Physical Review, 79, 1Z8, 13Z (1950) 10. Ingram, D. J. E...

  15. SOLAR SEMINAR SERIES S P R I N G 2 0 1 3 P H O T O V O L T A I C S E M I N A R S E R I E S

    E-Print Network [OSTI]

    Ginzel, Matthew

    challenge for the success of copper indium gallium selenide (CIGS) photovoltaic cells. Co-evaporation yieldsSOLAR SEMINAR SERIES S P R I N G 2 0 1 3 P H O T O V O L T A I C S E M I N A R S E R I E S BILLY J spanning more than 30 years in the solar industry. He is an expert in the business and science

  16. Compatibility of ITER candidate structural materials with static gallium

    SciTech Connect (OSTI)

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-12-01T23:59:59.000Z

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400{degrees}C, corrosion rates are {approx}4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400{degrees}C are {ge}88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400{degrees}C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized.

  17. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2008. Indium-containing

    E-Print Network [OSTI]

    : Data on the quantity of secondary indium recovered from scrap were not available. Indium is most loop--from collection of scrap to production of secondary materials--now takes less than 30 days. ITO to dissolve the ITO, from which the indium is recovered. Indium recovery from tailings was thought to have

  18. Harmonic generation from indium-rich plasmas

    SciTech Connect (OSTI)

    Ganeev, R. A.; Kulagin, I. A. [Akadempribor Scientific Association, Academy of Sciences of Uzbekistan, Tashkent 700125 (Uzbekistan); Singhal, H.; Naik, P. A.; Arora, V.; Chakravarty, U.; Chakera, J. A.; Khan, R. A.; Raghuramaiah, M.; Gupta, P. D. [Laser Plasma Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Redkin, P. V. [Samarkand State University, Samarkand 703004 (Uzbekistan)

    2006-12-15T23:59:59.000Z

    An experimental study of high-order harmonic generation in In, InSb, InP, and InGaP plasmas using femtosecond laser radiation with variable chirp is presented. Intensity enhancement of the 13th and 21st harmonics compared to the neighboring harmonics by a factor of 200 and 10, respectively, is observed. It is shown that the harmonic spectrum from indium-containing plasma plumes can be considerably modified by controlling the chirp of the driving laser pulse.

  19. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1996. Two companies in

    E-Print Network [OSTI]

    on world production of primary gallium were unavailable because data on the output of the few producers62 GALLIUM (Data in kilograms of gallium content, unless otherwise noted) Domestic Production in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar

  20. Reversible expansion of gallium-stabilized (delta)-plutonium

    SciTech Connect (OSTI)

    Wolfer, W G; Oudot, B; Baclet, N

    2006-02-27T23:59:59.000Z

    It is shown that the transient expansion of plutonium-gallium alloys observed both in the lattice parameter as well as in the dimension of a sample held at ambient temperature can be explained by assuming incipient precipitation of Pu{sub 3}Ga. However, this ordered {zeta}-phase is also subject to radiation-induced disordering. As a result, the gallium-stabilized {delta}-phase, being metastable at ambient temperature, is driven towards thermodynamic equilibrium by radiation-enhanced diffusion of gallium and at the same time reverted back to its metastable state by radiation-induced disordering. A steady state is reached in which only a modest fraction of the gallium present is arranged in ordered {zeta}-phase regions.

  1. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect (OSTI)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01T23:59:59.000Z

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  2. Application of ultrasound in solvent extraction of nickel and gallium

    SciTech Connect (OSTI)

    Pesic, B.

    1996-07-01T23:59:59.000Z

    The effects of ultrasound on the rate of solvent extraction of nickel with Lix 65N and Lix 70, and gallium with Kelex 100 were investigated. These solvent extraction systems are noted by their sluggish nature. Low frequency (20 kHz) ultrasound increased the rates of extraction of nickel by factors of four to seven. The ultrasound had no effect on the final chemical equilibrium. Gallium extraction rates were enhanced with the use of ultrasound by as much as a factor of 15. Again, the ultrasound had no effect on extraction equilibrium. For both nickel and gallium, the enhanced rates were attributed to increased interfacial surface area associated with ultrasonically induced cavitation and microdroplet formation. The stability of the microdroplets permitted intermittent application of ultrasound with corresponding decreases in ultrasonic energy requirements. The lowest energy consumption was observed with short (0.25 to 5 s) bursts of high power (41 to 61 W) ultrasonic inputs. The study also provided insight into the factors that affect the complex extraction of gallium from sodium aluminate solutions. The rate controlling step was found to be the dehydration of the gallate ion, Ga(OH)4, and the first complex formation between gallium and Kelex 100. Sodium was found to enhance the extraction rate up to a point, beyond which increased concentration was detrimental. Increasing aluminum concentration was found to slow extraction rates. Modifiers and diluents were shown to markedly affect extraction rates even without ultrasound. Ketone modifiers, particularly 2-undecanone, when used with Kermac 470B or Escaid 200 diluents enhanced extraction rates of gallium to the point that the use of ultrasound provided no additional benefits. The positive effects of ketone modifiers for the solvent extraction of gallium had not been previously reported.

  3. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOE Patents [OSTI]

    Hogan, S.J.

    1983-03-13T23:59:59.000Z

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  4. Synthesis, characterization, and exciton dynamics of II-VI semiconducting nanomaterials and ab-initio studies for applications in explosives sensing

    E-Print Network [OSTI]

    Cooper, Jason Kyle

    2013-01-01T23:59:59.000Z

    gallium diselenide (CIGS) solar cells were studied. TheCIGS (copper indium gallium diselenide) thin film solar cells

  5. Interaction of a Liquid Gallium Jet with ISTTOK Edge Plasmas

    SciTech Connect (OSTI)

    Gomes, R. B.; Fernandes, H.; Silva, C.; Pereira, T.; Figueiredo, J.; Carvalho, B.; Soares, A.; Duarte, P.; Varandas, C. [Associacao EURATOM/IST, Centro de Fusao Nuclear, Av. Rovisco Pais, 1049-001 Lisboa, Porugal (Portugal); Sarakovskis, A.; Lielausis, O.; Klyukin, A.; Platacis, E.; Tale, I. [Association EURATOM/University of Latvia, Institute of Solid State Physics, 8 Kengaraga Str., LV-1063 Riga (Latvia)

    2008-04-07T23:59:59.000Z

    The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages in the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaust from fusion devices. Presently the most promising candidate materials are lithium and gallium. However, lithium has a short liquid state range when compared, for example, with gallium that has essentially better thermal properties and lower vapor pressure. To explore further these properties, ISTTOK tokamak is being used to test the interaction of a free flying, fully formed liquid gallium jet with the plasma. The interacting, 2.3 mm diameter, jet is generated by hydrostatic pressure and has a 2.5 m/s flow velocity. The liquid metal injector has been build to allow the positioning of the jet inside the tokamak chamber, within a 13 mm range. This paper presents the first obtained experimental results concerning the liquid gallium jet-plasma interaction. A stable jet has been obtained, which was not noticeably affected by the magnetic field transients. ISTTOK has been successfully operated with the gallium jet without degradation of the discharge or a significant plasma contamination by liquid metal. This observation is supported by spectroscopic measurements showing that gallium radiation is limited to the region around the jet. Furthermore, the power deposited on the jet has been evaluated at different radial locations and the surface temperature increase estimated.

  6. An evaluation of indium antimonide quantum well transistor technology

    E-Print Network [OSTI]

    Liu, Jingwei, M. Eng. Massachusetts Institute of Technology

    2006-01-01T23:59:59.000Z

    Motivated by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its ...

  7. The natural and industrial cycling of indium in the environment

    E-Print Network [OSTI]

    White, Sarah Jane O'Connell

    2012-01-01T23:59:59.000Z

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling ...

  8. Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers

    DOE Patents [OSTI]

    Krupke, William F. (Pleasanton, CA); Page, Ralph H. (San Ramon, CA); DeLoach, Laura D. (Manteca, CA); Payne, Stephen A. (Castro Valley, CA)

    1996-01-01T23:59:59.000Z

    A new class of solid state laser crystals and lasers are formed of transition metal doped sulfide, selenide, and telluride host crystals which have four fold coordinated substitutional sites. The host crystals include II-VI compounds. The host crystal is doped with a transition metal laser ion, e.g., chromium, cobalt or iron. In particular, Cr.sup.2+ -doped ZnS and ZnSe generate laser action near 2.3 .mu.m. Oxide, chloride, fluoride, bromide and iodide crystals with similar structures can also be used. Important aspects of these laser materials are the tetrahedral site symmetry of the host crystal, low excited state absorption losses and high luminescence efficiency, and the d.sup.4 and d.sup.6 electronic configurations of the transition metal ions. The same materials are also useful as saturable absorbers for passive Q-switching applications. The laser materials can be used as gain media in amplifiers and oscillators; these gain media can be incorporated into waveguides and semiconductor lasers.

  9. Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers

    DOE Patents [OSTI]

    Krupke, W.F.; Page, R.H.; DeLoach, L.D.; Payne, S.A.

    1996-07-30T23:59:59.000Z

    A new class of solid state laser crystals and lasers are formed of transition metal doped sulfide, selenide, and telluride host crystals which have four fold coordinated substitutional sites. The host crystals include II-VI compounds. The host crystal is doped with a transition metal laser ion, e.g., chromium, cobalt or iron. In particular, Cr{sup 2+}-doped ZnS and ZnSe generate laser action near 2.3 {micro}m. Oxide, chloride, fluoride, bromide and iodide crystals with similar structures can also be used. Important aspects of these laser materials are the tetrahedral site symmetry of the host crystal, low excited state absorption losses and high luminescence efficiency, and the d{sup 4} and d{sup 6} electronic configurations of the transition metal ions. The same materials are also useful as saturable absorbers for passive Q-switching applications. The laser materials can be used as gain media in amplifiers and oscillators; these gain media can be incorporated into waveguides and semiconductor lasers. 18 figs.

  10. LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia

    E-Print Network [OSTI]

    Yong, Foo Nun

    2006-01-01T23:59:59.000Z

    Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase ...

  11. Pair distribution function study on compression of liquid gallium

    SciTech Connect (OSTI)

    Luo, Shengnian [Los Alamos National Laboratory; Yu, Tony [SUNY-SB; Chen, Jiuhua [SUNY-SB; Ehm, Lars [SUNY-SB; Guo, Quanzhong [SUNY-SB; Parise, John [SUNY-SB

    2008-01-01T23:59:59.000Z

    Integrating a hydrothermal diamond anvil cell (HDAC) and focused high energy x-ray beam from the superconductor wiggler X17 beamline at the National Synchrotron Light Source (NSLS) at the Brookhaven National Laboratory (BNL), we have successfully collected high quality total x-ray scattering data of liquid gallium. The experiments were conducted at a pressure range from 0.1GPa up to 2GPa at ambient temperature. For the first time, pair distribution functions (PDF) for liquid gallium at high pressure were derived up to 10 {angstrom}. Liquid gallium structure has been studied by x-ray absorption (Di Cicco & Filipponi, 1993; Wei et al., 2000; Comez et al., 2001), x-ray diffraction studies (Waseda & Suzuki, 1972), and molecular dynamics simulation (Tsay, 1993; Hui et al., 2002). These previous reports have focused on the 1st nearest neighbor structure, which tells us little about the atomic arrangement outside the first shell in non- crystalline materials. This study focuses on the structure of liquid gallium and the atomic structure change due to compression. The PDF results show that the observed atomic distance of the first nearest neighbor at 2.78 {angstrom} (first G(r) peak and its shoulder at the higher Q position) is consistent with previous studies by x-ray absorption (2.76 {angstrom}, Comez et al., 2001). We have also observed that the first nearest neighbor peak position did not change with pressure increasing, while the farther peaks positions in the intermediate distance range decreased with pressure increasing. This leads to a conclusion of the possible existence of 'locally rigid units' in the liquid. With the addition of reverse Monte Carlo modeling, we have observed that the coordination number in the local rigit unit increases with pressure. The bulk modulus of liquid gallium derived from the volume compression curve at ambient temperature (300K) is 12.1(6) GPa.

  12. Self- and zinc diffusion in gallium antimonide

    SciTech Connect (OSTI)

    Nicols, Samuel Piers

    2002-03-26T23:59:59.000Z

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

  13. (Data in kilograms of gallium content, unless noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1995. Two companies in

    E-Print Network [OSTI]

    : No domestic primary gallium recovery was reported in 1995. Two companies in Oklahoma and Utah recovered devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar cells contract to a consortium of private companies to develop gallium nitride technology. Blue LED's are useful

  14. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2002. Two companies in

    E-Print Network [OSTI]

    and Use: No domestic primary gallium recovery was reported in 2002. Two companies in Oklahoma and Utah diodes, photodetectors, and solar cells. Integrated circuits represented 65% of gallium demand forecasts of market growth, several companies were consolidating, reducing, or eliminating their Ga

  15. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1984-03-13T23:59:59.000Z

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  16. High-efficiency indium tin oxide/indium phosphide solar cells

    SciTech Connect (OSTI)

    Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

    1989-06-26T23:59:59.000Z

    Improvements in the performance of indium tin oxide/indium phosphide (ITO/InP) solar cells have been achieved by using dc magnetron sputter deposited /ital n/-ITO onto an epitaxial /ital p///ital p//sup +/ structure grown on good quality commercial /ital p//sup +/ bulk substrates. The composition of the sputtering gas has been investigated and the highest efficiency cells resulted when the surface of the epilayer was exposed to an Ar/H/sub 2/ plasma before depositing the bulk of the ITO in a more typical Ar/O/sub 2/ plasma. With H/sub 2/ processing, record efficiencies of 18.9% global, 1000 W m/sup /minus/2/, 25 /degree/C (17.0% air mass zero) were achieved. Without H/sub 2/ processing, the devices exhibited lower efficiencies and were unstable. Type conversion of the InP was shown to occur and was established as being associated with the ITO (possibly due to Sn donors) rather than sputter damage. These improvements in performance have resulted from the optimization of the doping, thickness, transport, and surface properties of the /ital p/-type base, as well as from better control over the ITO deposition procedure.

  17. P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide

    E-Print Network [OSTI]

    P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide Sputtering Targets M. Schlott, M from indium-oxide tin-oxide (ITO) targets [1]. Unfor- tunately, black growths, or nodules, commonly isostatic pressing partly reduced powder mixtures of 90 wt.% indium-oxide and 10 wt.% tin-oxide [4

  18. Laser Direct Write Patterned Indium Tin Oxide Films for Photomasks and Anisotropic Resist Applications

    E-Print Network [OSTI]

    Chapman, Glenn H.

    Laser Direct Write Patterned Indium Tin Oxide Films for Photomasks and Anisotropic Resist bimetallic Sn/In film into a indium tin oxide layer. Sn over In films (15-120nm thick) with a 1:10 thickness mask, etch resist. 1. Introduction The transparent and conductive films like indium tin oxide (ITO

  19. E-Print Network 3.0 - arsenide- gallium instrument Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Science 5 Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy Summary: Formation of etch pits...

  20. Nanosecond dynamics of a gallium mirror's light-induced reflectivity change

    E-Print Network [OSTI]

    V. Albanis; S. Dhanjal; V. I. Emelyanov; V. A. Fedotov; K. F. MacDonald; P. Petropoulos; D. J. Richardson; N. I. Zheludev

    2000-10-05T23:59:59.000Z

    Transient pump-probe optical reflectivity measurements of the nano/microsecond dynamics of a fully reversible, light-induced, surface-assisted metallization of gallium interfaced with silica are reported. The metallization leads to a considerable increase in the interface's reflectivity when solid a-gallium is on the verge of melting. The reflectivity change was found to be a cumulative effect that grows with light intensity and pulse duration. The reflectivity relaxes back to that of alpha-gallium when the excitation is withdrawn in a time that increases critically at gallium's melting point. The effect is attributed to a non-thermal light-induced structural phase transition.

  1. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David S. (Evergreen, CO); Leisch, Jennifer (Denver, CO); Taylor, Matthew (West Simsbury, CT); Stanbery, Billy J. (Austin, TX)

    2011-09-20T23:59:59.000Z

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  2. Synthesis and microstructure of gallium phosphide nanowires W. S. Shi, Y. F. Zheng, N. Wang,a)

    E-Print Network [OSTI]

    Zheng, Yufeng

    Synthesis and microstructure of gallium phosphide nanowires W. S. Shi, Y. F. Zheng, N. Wang,a) C. S May 2001 Gallium phosphide GaP nanowires of 22 nm in diameter and hundreds micrometers in length were synthesized by laser ablation of a powder mixture of GaP and gallium oxide (Ga2O3 . The morphology

  3. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOE Patents [OSTI]

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30T23:59:59.000Z

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  4. INDIUM--2001 37.1 By Robert D. Brown, Jr.

    E-Print Network [OSTI]

    smelter (Platts Metals Week, 2001c). The indium is contained in the flue dust that had accumulated for more than 50 years, until the smelter's closure in 1981. Shortly after the closure, the U.S. Environmental Protection Agency (EPA), declared the former smelter a Superfund site, under a regulation

  5. IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption

    E-Print Network [OSTI]

    Grandidier, Jonathan

    IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption--Gallium arsenide, nanospheres, photovoltaic systems, whispering gallery modes (WGMs). I. INTRODUCTION THE route as the active layer is thinned [2]. Thin-film photovoltaics offer the possibility to significantly reduce

  6. Two-photon photovoltaic effect in gallium arsenide Jeff Chiles,1

    E-Print Network [OSTI]

    Fathpour, Sasan

    Two-photon photovoltaic effect in gallium arsenide Jichi Ma,1 Jeff Chiles,1 Yagya D. Sharma,2 214669); published September 4, 2014 The two-photon photovoltaic effect is demonstrated in gallium; (230.0250) Optoelectronics; (040.5350) Photovoltaic; (130.4310) Nonlinear. http://dx.doi.org/10.1364/OL

  7. Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics

    E-Print Network [OSTI]

    Zheludev, Nikolay

    Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics A. V penetration of gallium into an aluminum film. These composite films form mirrorlike interfaces with silica optics and active plasmonics. The material is a polycrystalline aluminum film on a silica sub- strate

  8. Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass

    E-Print Network [OSTI]

    Hughes, M; Rutt, H; Hewak, D

    2014-01-01T23:59:59.000Z

    Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width half maximum (FWHM) of 500 nm, is observed peaking at 1500 nm when exciting at 514, 808 and 1064 nm. The fluorescence lifetime and quantum efficiency at 300 K were measured to be 33.4 us and 4 % respectively. From the available spectroscopic data we propose the vanadium ions valence to be 3+ and be in tetrahedral coordination The results indicate potential for development of a laser or optical amplifier based on V:GLS.

  9. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01T23:59:59.000Z

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  10. Electrodeposition of a nickel-indium alloy from an ammonium citrate electrolyte

    SciTech Connect (OSTI)

    Vinogradov, S.N.; Perelygin, Yu.P.

    1988-05-01T23:59:59.000Z

    The possibility of the electrolytic deposition of a nickel-indium alloy from an ammonium citrate electrolyte for purposes of increasing the cathode current output was investigated. The alloy antifriction coating was deposited in a rectangular glass bath of an electrolyte containing indium in the forms of a sulfate and a hydroxocitrate complex and nickel in the forms of mixed ammonium and citrate complexes as well as in sulfate form. The dependence of indium content and current output of the alloy on current density and indium sulfate concentration in the electrolyte was determined. Polarization curves for alloy precipitation established that indium precipitated at more negative potentials than nickel. The effect of indium content on microhardness was also assessed. An optimum electrolyte composition, pH value, and current density were established.

  11. Commercialization of High Efficiency Low Cost CIGS Technology Based on Electroplating: Final Technical Progress Report, 28 September 2007 - 30 June 2009

    SciTech Connect (OSTI)

    Basol, B.

    2010-08-01T23:59:59.000Z

    This report describes SoloPower's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. The project focused on SoloPower's electrodeposition-based copper indium gallium (di)selenide (CIGS) technology. Under this subcontract, SoloPower improved the quality of its flexible metal substrates, increased the size of its solar cells from 0.5 cm2 to 120 cm2, increased the small-area cell efficiencies from near 11% to near 14%, demonstrated large-area cells, and developed a module manufacturing process.

  12. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15T23:59:59.000Z

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  13. Absorption of ac fields in amorphous indium-oxide films

    SciTech Connect (OSTI)

    Ovadyahu, Z. [Racah Institute of Physics, the Hebrew University, Jerusalem 91904 (Israel)

    2014-08-20T23:59:59.000Z

    Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3?x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

  14. A high frequency titration of indium with benzenephosphinic acid

    E-Print Network [OSTI]

    Keilt, Francis Xavier

    1960-01-01T23:59:59.000Z

    of the titrant would not indicate any change in the conductance of the solution. Tin, titanium, zirconium, bismuth, molybdenum, uranium, tungsten, and cerium would interfere with the ti. tration of indium. TABLE OF COHTEHTS Page I? XHTRODUCTIOH... from titanium, molybdenum, tungsten, uranium, cerium, zirconium, silver, mercury, tin or bismuth by the recosaended procedure. It is quite possible that in using a high fre- quency method these elements uould not interfere. This would have...

  15. Gallium phosphide high-temperature bipolar junction transistor

    SciTech Connect (OSTI)

    Zipperian, T.E.; Dawson, L.R.; Caffin, R.J.

    1981-03-01T23:59:59.000Z

    Preliminary results are reported on the development of a high-temperature (> 350/sup 0/C) gallium phosphide bipolar junction transistor (BJT) for goethermal and other energy applications. This four-layer p/sup +/n/sup -/pp/sup +/ structure was fromed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The gallium phosphide BJT is observed to have a common-emitter current gain peaking in the range of 6 to 10 (for temperatures from 20/sup 0/C to 400/sup 0/C) and a room-temperature, punchthrough-limited, collector-emitter breakdown voltage of approximately -6V. Other parameters of interest include an f/sub/ = 400 KHz (at 20/sup 0/C) and a collector base leakage current = 200 ..mu..A (at 350/sup 0/C).

  16. Gallium nitride microcavities formed by photoenhanced wet oxidation

    SciTech Connect (OSTI)

    Peng, L.-H.; Lu, C.-Y.; Wu, W.-H.; Wang, S.-L. [Department of Electrical Engineering and Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan (China)

    2005-10-17T23:59:59.000Z

    We report the formation of gallium nitride (GaN) microcavities by manipulating a photoenhanced oxidation rate difference between the polar and nonpolar crystallographic planes of GaN. When immersed in a buffered acetic (CH{sub 3}COOH) electrolyte of pH{approx}6.2 at room temperature, it is shown that the photo-oxidation can proceed at a rate that is one order of magnitude slower on the nonpolar plane of {l_brace}1100{r_brace}{sub GaN} than on the polar plane of {l_brace}0001{r_brace}{sub GaN} due to the reduced surface field action. Gallium nitride microcavities bounded by optically smooth {l_brace}1100{r_brace} and {l_brace}1103{r_brace} facets can thus be preferentially formed on the c-plane sapphire substrate after dissolving the oxide layer. The optical properties of these GaN hexagonal cavities reveal characteristic peaks of whispering gallery modes in resonance with the GaN band edge emission spectrum. A typical cavity Q factor of 10{sup 3} is observed in these GaN microcavities due to a reduced optical scattering loss in the wet chemical reaction process.

  17. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Nanocrystalline dye-sensitized solar cell/copper indium3, pp. M. Grätzel, “Dye-sensitized solar cells,” Journal ofefficiency solar cell based on dye- sensitized colloidal

  18. Method for enhancing the solubility of boron and indium in silicon

    DOE Patents [OSTI]

    Sadigh, Babak (Oakland, CA); Lenosky, Thomas J. (Pleasanton, CA); Diaz de la Rubia, Tomas (Danville, CA); Giles, Martin (Hillsborough, OR); Caturla, Maria-Jose (Livermore, CA); Ozolins, Vidvuds (Pleasanton, CA); Asta, Mark (Evanston, IL); Theiss, Silva (St. Paul, MN); Foad, Majeed (Santa Clara, CA); Quong, Andrew (Livermore, CA)

    2002-01-01T23:59:59.000Z

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  19. Emission and spectral characteristics of electrodeless indium halide lamp

    SciTech Connect (OSTI)

    Takeda, M.; Hochi, A.; Horii, S.; Matsuoka, T. [Matsushita Electric Industrial Co., Ltd., Kyoto (Japan). Lighting Research Lab.

    1997-12-31T23:59:59.000Z

    The electrodeless HID lamp excited by microwave has been intensively investigated because of its long life, high efficacy and environmental aspect. This study reports excellent emission and spectral characteristics of electrodeless HID lamp containing indium halides. The authors investigate InI and InBr as ingredients, and measure the microwave excited spectra and luminous intensities of lamps which are made from spherical silica glass in 10--40 mm outer diameter and with various amounts of halides. It is well known that such indium halides in the usual metal-halide lamps have strong blue line emission at 410 and 451nm. But, in the authors` microwave excited lamps, continuous spectrum can be observed in addition in the visible region. Increasing input of power of microwave makes this continuous spectrum stronger. Below 1kW microwave input power, the spectrum of InBr lamp almost resembled the CIE standard illuminant D65. As a consequence of the spectrum, they found that the color rendering and the duv of InBr lamp were excellent as high as 95 and smaller than 0.002, respectively, in the region of 400--800W input power. The efficacy higher than 100 lm/W was further achieved at 400W. The authors confirm that the microwave excited indium halides lamps can be applicable to many fields of lighting.

  20. Specific interaction of fluoride ions with aluminum and gallium solvates in an ethylene glycol solutions

    SciTech Connect (OSTI)

    Petrosyants, S.P.; Tsabel', E.R.; Buslaev, Yu.A.

    1986-01-01T23:59:59.000Z

    The interaction of aluminum chloride and gallium chloride with KF in ethylene glycol solutions with F:M/sup 3 +/ mole ratios approximately equal to 2 includes a step involving the formation of fluorine-containing species, in which the fluoride ions are held in the outer sphere of ethylene glycol solvates of aluminum and gallium. Complexes based on hexacoordinate solvates predominate in the solutions of aluminum, while in the case of gallium, in contrast to aluminum, the coexistence of tetra- and hexacoordinate complexes is characteristic. The configurational equilibrium in the solutions of gallium is one of the causes of the structurization of the solutions, i.e., polymerization due to the formation of H bonds between the fluoride ions and the coordinated ethylene glycol molecules.

  1. Luminescence dynamics and waveguide applications of europium doped gallium nitride powder

    E-Print Network [OSTI]

    Lipson, Michal

    Luminescence dynamics and waveguide applications of europium doped gallium nitride powder Carl B, bismuth shot, and europium ingot in an ammonia ambient to initially obtain chunks of the desired material

  2. First Results of the Testing of the Liquid Gallium Jet Limiter Concept for ISTTOK

    SciTech Connect (OSTI)

    Gomes, R. B.; Fernandes, H.; Silva, C.; Borba, D.; Carvalho, B.; Varandas, C. [Associacao EURATOM/IST, Centro de FuSao Nuclear, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Lielausis, O.; Klyukin, A.; Platacis, E.; Mikelsons, A.; Platnieks, I. [Association EURATOM/University of Latvia, Institute of Physics, 32 Miera Str., Salaspils, LV-2169 (Latvia)

    2006-12-04T23:59:59.000Z

    The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages to the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaustion from fusion devices. Presently the most promising materials are Lithium and Gallium. ISTTOK, a small size tokamak, will be used to test the behavior of a liquid Gallium jet in the vacuum chamber and its influence on the plasma. This paper presents a description of the conceived setup as well as experimental results. The liquid Gallium jet is generated by hydrostatic pressure and injected in a radial position close to a moveable stainless steel limiter. Both the jet and the limiter positions are variable allowing for a controlled exposure of the liquid Gallium to the edge plasma. The main components of the Gallium loop are a MHD pump, the liquid metal injector and a filtering system. The MHD pump is of the induction type, based on rotating permanent magnets. The injector is build from a stainless steel pipe ended by a shaping nozzle. A setup has been developed to introduce oxide-free Gallium inside the loop's main supply tank. Raw liquid metal is placed inside a chamber heated and degassed under high vacuum while clean Gallium is extracted from the main body of the liquefied metal. Prior to installation on the tokamak, the experimental rig has been implemented using a Pyrex tube as test chamber to investigate the stability of the Gallium jet and its break-up length for several nozzle sizes. Results are presented in this paper. This rig was also useful to assess the behavior of the overall implemented apparatus.

  3. High-Temperature Decomposition of Brønsted Acid Sites in Gallium-Substituted Zeolites

    SciTech Connect (OSTI)

    K Al-majnouni; N Hould; W Lonergan; D Vlachos; R Lobo

    2011-12-31T23:59:59.000Z

    The dehydroxylation of Broensted acid sites (BAS) in Ga-substituted zeolites was investigated at temperatures up to 850 C using X-ray absorption spectroscopy (XAS), Fourier transform infrared spectroscopy (FTIR), and mass spectrometry-temperature programmed desorption (MS-TPD). X-ray absorption near-edge spectroscopy (XANES) revealed that the majority of gallium has tetrahedral coordination even after complete dehydroxylation. The interatomic gallium-oxygen distance and gallium coordination number determined by extended X-ray absorption fine structure (EXAFS) are consistent with gallium in tetrahedral coordination at low T (< 550 C). Upon heating Ga-Beta and Ga-ZSM5 to 850 C, analysis of the EXAFS showed that 70 and 80% of the gallium was still in tetrahedral coordination. The remainder of the gallium was found to be in octahedral coordination. No trigonal Ga atoms were observed. FTIR measurements carried out at similar temperatures show that the intensity of the OH vibration due to BAS has been eliminated. MS-TPD revealed that hydrogen in addition to water evolved from the samples during dehydroxylation. This shows that dehydrogenation in addition to dehydration is a mechanism that contributes to BAS decomposition. Dehydrogenation was further confirmed by exposing the sample to hydrogen to regenerate some of the BAS as monitored by FTIR and MS-TPD.

  4. Study of liquid gallium at high pressure using synchrotron x-ray

    SciTech Connect (OSTI)

    Yu, Tony; Guo Quanzhong; Parise, John [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); Chen Jiuhua [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); Department of Mechanical and Materials Engineering, Center for the Study of Matters at Extreme Conditions, Florida International University, Miami, Florida 33199 (United States); Ehm, Lars [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973-5000 (United States); Huang Shu [Department of Mechanical and Materials Engineering, Center for the Study of Matters at Extreme Conditions, Florida International University, Miami, Florida 33199 (United States); Luo Shengnian [Physics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2012-06-01T23:59:59.000Z

    Liquid gallium has been studied at high pressure up to 2 GPa and ambient temperature in a diamond anvil cell using high energy synchrotron x-ray beam. The total x-ray scattering data of liquid gallium were collected up to Q = 12 A{sup -1} and analyzed using pair distribution functions (PDF). The results indicate that the first nearest neighbor peak and second nearest neighbor (shoulder) peak of PDF in liquid gallium does not change with pressure, whereas the higher order (i.e., third and fourth) nearest neighbor peaks shift towards shorter distance with increasing pressure. Reverse Monte Carlo modeling based on the observed data shows that the coordination number in the liquid gallium increases with pressure from 10.5 at 0.3 GPa to 11.6 at 2 GPa. An atomic arrangement similar to the crystalline phase of Ga(II) with coordination number of 12 is proposed for the locally dense-packed rigid unit in liquid gallium. The volume compression data derived from the structure modeling yield a bulk modulus of 12.1(6) GPa for liquid gallium.

  5. Patterning of indium tin oxide by projection photoablation and lift-off process for fabrication of flat-panel displays

    E-Print Network [OSTI]

    Jain, Kanti

    Patterning of indium tin oxide by projection photoablation and lift-off process for fabrication online 25 June 2007 Indium tin oxide ITO , an important material used as a transparent conductive oxide in such fabrication. Therefore, innovations in patterning tech- nology, especially for materials such as indium tin

  6. The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films

    E-Print Network [OSTI]

    Shahriar, Selim

    MRSEC The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films D Science & Engineering Center For zinc-indium-tin oxide (ZITO) films, grown by pulsed-laser deposition was replaced by substitution with zinc and tin in equal molar proportions (co-substitution). All ZITO films

  7. Study of Magnetohydrodynamic Surface Waves on Liquid Gallium

    SciTech Connect (OSTI)

    Hantao Ji; William Fox; David Pace; H.L. Rappaport

    2004-05-13T23:59:59.000Z

    Magnetohydrodynamic (MHD) surface waves on liquid gallium are studied theoretically and experimentally in the small magnetic Reynolds number limit. A linear dispersion relation is derived when a horizontal magnetic field and a horizontal electric current is imposed. No wave damping is found in the shallow liquid limit while waves always damp in the deep liquid limit with a magnetic field parallel to the propagation direction. When the magnetic field is weak, waves are weakly damped and the real part of the dispersion is unaffected, while in the opposite limit waves are strongly damped with shortened wavelengths. In a table-top experiment, planar MHD surface waves on liquid gallium are studied in detail in the regime of weak magnetic field and deep liquid. A non-invasive diagnostic accurately measures surface waves at multiple locations by reflecting an array of lasers off the surface onto a screen, which is recorded by an Intensified-CCD camera. The measured dispersion relation is consistent with the linear theory with a reduced surface tension likely due to surface oxidation. In excellent agreement with linear theory, it is observed that surface waves are damped only when a horizontal magnetic field is imposed parallel to the propagation direction. No damping is observed under a perpendicular magnetic field. The existence of strong wave damping even without magnetic field suggests the importance of the surface oxide layer. Implications to the liquid metal wall concept in fusion reactors, especially on the wave damping and a Rayleigh-Taylor instability when the Lorentz force is used to support liquid metal layer against gravity, are discussed.

  8. Thermal neutron flux perturbation due to indium foils in water

    E-Print Network [OSTI]

    Stinson, Ronald Calvin

    1961-01-01T23:59:59.000Z

    of MASTER OF SCIENCE August, i 96I Major Subject: Nuclear Engineering THERMAL NEUTRON FLUX PERTURBATION DUE TO INDIUM FOILS IN WATER A Thesis by Ronald C. Stinson, Jr. Approved as to style and content by: Chai man of Committee Head of Department.... 2. Tittle, C. N. , Nucleonics 8, (6), 5 (1951); Ibid 9 (1), 60 (1951). 3. Skyrme, T, H. R. , "Reduction in Neutron Density Caused by an Absorbing Disc. " MS-91 (N. D. ) 4. Dalton, G. R. and Osborn, R. K. , Nuclear Science and En ineerin 9, 19...

  9. By Deborah A. Kramer No primary gallium was produced in the United States in consumption were adjusted to reflect full industry coverage.

    E-Print Network [OSTI]

    that it would reopen its 50-ton-per-year gallium recovery facility in Pinjarra, Western Australia, in 1996

  10. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1997. Two companies in

    E-Print Network [OSTI]

    and Use: No domestic primary gallium recovery was reported in 1997. Two companies in Oklahoma and Utah in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar-than-expected increase in demand. The company planned to operate its refineries in France and Germany using stockpiled

  11. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1999. Two companies in

    E-Print Network [OSTI]

    and Use: No domestic primary gallium recovery was reported in 1999. Two companies in Oklahoma and Utah in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar in July. The additional facility was expected to double the company's refinery capacity to 100

  12. Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study

    E-Print Network [OSTI]

    Ludwig, Christian D R; Felser, Claudia; Schilling, Tanja; Windeln, Johannes; Kratzer, Peter

    2010-01-01T23:59:59.000Z

    Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which may contribute to the low observed efficiency of Ga-rich CIGS solar cells.

  13. Exploration of Novel Reaction Pathway for Formation of Copper Indium Gallium Diselenide: Cooperative Research and Development Final Report, CRADA Number CRD-03-121

    SciTech Connect (OSTI)

    van Hest, M.

    2014-11-01T23:59:59.000Z

    The investigation will explore a potentially low-cost method of forming CIGS for use in solar cells. Investigators from HelioVolt will work in NREL laboratories to modify and apply our tools in fabrication of the CIGS layer. Investigators from NREL will assist in preparing substrates and in compleing solar cells composed of these CIGS layers to evaluate the effectiveness of the HelioVolt processes.

  14. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    E-Print Network [OSTI]

    Flewitt, Andrew J.; Powell, M.J.

    2014-01-01T23:59:59.000Z

    of the display industry as it moves from liquid crystal to organic light emitting diode technology and with requirements for larger areas and higher resolutions. A number of alternative material systems to a-Si:H have emerged, including organic semiconductors...

  15. The design, construction, and testing of a nuclear fuel rod thermal simulation system to study gallium/Zircaloy interactions

    E-Print Network [OSTI]

    Allison, Christopher Curtis

    1999-01-01T23:59:59.000Z

    The presence of gallium in weapons grade plutonium has raised many questions concerning its use in light water reactor (LWR) fuel rods. The biggest concern is that the gallium will migrate down the thermal gradient in the fuel rod and deposit...

  16. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24T23:59:59.000Z

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  17. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOE Patents [OSTI]

    Seager, Carleton H. (1304 Onava Ct., NE., Albuquerque, NM 87112); Evans, Jr., Joseph Tate (13609 Verbena Pl., NE., Albuquerque, NM 87112)

    1998-01-01T23:59:59.000Z

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  18. Electron backscatter diffraction of plutonium-gallium alloys

    SciTech Connect (OSTI)

    Boehlert, C. J. (Carl J.); Zocco, T. G. (Thomas G.); Schulze, R. K. (Roland K.); Mitchell, J. N. (Jeremy N.); Pereyra, R. A. (Ramiro A.)

    2002-01-01T23:59:59.000Z

    At Los Alamos National Laboratory a recent experimental technique has been developed to characterize reactive metals, including plutonium arid cerium, using electron backscatter diffraction (EBSD). Microstructural characterization of plutonium and its alloys by EBSD had been previously elusive primarily because of the extreme toxicity and rapid surface oxidation rate associated with plutonium metal. The experimental techniques, which included ion-sputtering the metal surface using a scanning auger microprobe (SAM) followed by vacuum transfer of the sample from the SAM to the scanning electron microscope (SEM), used to obtain electron backscatter diffraction Kikuchi patterns (EBSPs) and orientation maps for plutonium-gallium alloys are described and the initial microstructural observations based on the analysis are discussed. Combining the SEM and EBSD observations, the phase transformation behavior between the {delta} and {var_epsilon} structures was explained. This demonstrated sample preparation and characterization technique is expected to be a powerful means to further understand phase transformation behavior, orientation relationships, and texlure in the complicated plutonium alloy systems.

  19. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement 

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16T23:59:59.000Z

    Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

  20. Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)

    SciTech Connect (OSTI)

    Morris, R.N.

    1998-08-01T23:59:59.000Z

    This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

  1. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect (OSTI)

    Faraby, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); DiBattista, M. [Qualcomm Technologies Incorporated, San Diego, California 92121 (United States); Bandaru, P. R., E-mail: pbandaru@ucsd.edu [Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-04-28T23:59:59.000Z

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  2. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect (OSTI)

    Hofstetter, Markus [Helmholtz Zentrum Muenchen, German Research Center for Environmental Health, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany)] [Helmholtz Zentrum Muenchen, German Research Center for Environmental Health, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany); Howgate, John [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany)] [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany); Schmid, Martin [Helmholtz Zentrum Muenchen, German Research Center for Environmental Health, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany)] [Helmholtz Zentrum Muenchen, German Research Center for Environmental Health, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany); Schoell, Sebastian; Sachsenhauser, Matthias [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany)] [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany); Adiguezel, Denis [Helmholtz Zentrum Muenchen, German Research Center for Environmental Health, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany)] [Helmholtz Zentrum Muenchen, German Research Center for Environmental Health, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany); Stutzmann, Martin; Sharp, Ian D. [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany)] [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany); Thalhammer, Stefan, E-mail: stefan.thalhammer@helmholtz-muenchen.de [Helmholtz Zentrum Muenchen, German Research Center for Environmental Health, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany)] [Helmholtz Zentrum Muenchen, German Research Center for Environmental Health, Ingolstaedter Landstrasse 1, D-85764 Neuherberg (Germany)

    2012-07-27T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth dynamics of adherent cells were compared to control samples. The impact of ionizing radiation on DNA, along with the associated cellular repair mechanisms, is well characterized and serves as a reference tool for evaluation of substrate effects. The results indicate that gallium nitride does not require specific surface treatments to ensure biocompatibility and suggest that cell signaling is not affected by micro-environmental alterations arising from gallium nitride-cell interactions. The observation that gallium nitride provides no bio-functional influence on the cellular environment confirms that this material is well suited for future biosensing applications without the need for additional chemical surface modification.

  3. Millimeter wave ferromagnetic resonance in gallium-substituted ?-iron oxide

    SciTech Connect (OSTI)

    Chao, Liu, E-mail: liu.chao@tufts.edu; Afsar, Mohammed N. [Department of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155 (United States); Ohkoshi, Shin-ichi [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2014-05-07T23:59:59.000Z

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60?GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ?-iron oxides (?-Ga{sub x}Fe{sub 2?x}O{sub 3}) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz–150 GHz. The ?-Ga{sub x}Fe{sub 2?x}O{sub 3} is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ?-Ga{sub x}Fe{sub 2?x}O{sub 3} particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ?-Ga{sub x}Fe{sub 2?x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  4. Gallium-cladding compatibility testing plan: Phase 3 -- Test plan for centrally heated surrogate rodlet test. Revision 2

    SciTech Connect (OSTI)

    Morris, R.N.; Baldwin, C.A.; Wilson, D.F.

    1998-07-01T23:59:59.000Z

    The Fissile Materials Disposition Program (FMDP) is investigating the use of weapons grade plutonium in mixed oxide (MOX) fuel for light-water reactors (LWR). Commercial MOX fuel has been successfully used in overseas reactors for many years; however, weapons derived fuel may differ from the previous commercial fuels because of small amounts of gallium impurities. A concern presently exists that the gallium may migrate out of the fuel, react with and weaken the clad, and thereby promote loss of fuel pin integrity. Phases 1 and 2 of the gallium task are presently underway to investigate the types of reactions that occur between gallium and clad materials. This is a Level-2 document as defined in the Fissile Materials Disposition Program Light-Water Reactor Mixed-Oxide Fuel Irradiation Test Project Plan. This Plan summarizes the projected Phase 3 Gallium-Cladding compatibility heating test and the follow-on post test examination (PTE). This work will be performed using centrally-heated surrogate pellets, to avoid unnecessary complexities and costs associated with working with plutonium and an irradiation environment. Two sets of rodlets containing pellets prepared by two different methods will be heated. Both sets will have an initial bulk gallium content of approximately 10 ppm. The major emphasis of the PTE task will be to examine the material interactions, particularly indications of gallium transport from the pellets to the clad.

  5. Development and modeling of iron-gallium alloys Rick Allen Kellogg

    E-Print Network [OSTI]

    Flatau, Alison B.

    Development and modeling of iron-gallium alloys by Rick Allen Kellogg A dissertation submitted APPENDIX C: POISSON'S RATIOS OF Fe-Al ALLOYS 154 REFERENCES 155 #12;iv ACKNOWLEDGEMENTS Many people deserve University and the Department of Aerospace Engineering and Engineering Mechanics for providing academic

  6. Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array

    E-Print Network [OSTI]

    Zhou, Chongwu

    Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire, and will aid in the design and optimization of nanowire-based systems for solar energy-conversion applications, and the photoelectrochemical energy-conversion properties of GaAs nanowire arrays were evaluated in contact with one

  7. ELECTRON MICROPROBE AND PHOTOLUMINESCENCE ANALYSIS OF EUROPIUM-DOPED GALLIUM NITRIDE LIGHT EMITTERS

    E-Print Network [OSTI]

    Strathclyde, University of

    ELECTRON MICROPROBE AND PHOTOLUMINESCENCE ANALYSIS OF EUROPIUM-DOPED GALLIUM NITRIDE LIGHT EMITTERSN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm with energies largely independent of the host material. For example, doping with europium, erbium and thulium

  8. Preconceptual design for separation of plutonium and gallium by ion exchange

    SciTech Connect (OSTI)

    DeMuth, S.F.

    1997-09-30T23:59:59.000Z

    The disposition of plutonium from decommissioned nuclear weapons, by incorporation into commercial UO{sub 2}-based nuclear reactor fuel, is a viable means to reduce the potential for theft of excess plutonium. This fuel, which would be a combination of plutonium oxide and uranium oxide, is referred to as a mixed oxide (MOX). Following power generation in commercial reactors with this fuel, the remaining plutonium would become mixed with highly radioactive fission products in a spent fuel assembly. The radioactivity, complex chemical composition, and large size of this spent fuel assembly, would make theft difficult with elaborate chemical processing required for plutonium recovery. In fabricating the MOX fuel, it is important to maintain current commercial fuel purity specifications. While impurities from the weapons plutonium may or may not have a detrimental affect on the fuel fabrication or fuel/cladding performance, certifying the effect as insignificant could be more costly than purification. Two primary concerns have been raised with regard to the gallium impurity: (1) gallium vaporization during fuel sintering may adversely affect the MOX fuel fabrication process, and (2) gallium vaporization during reactor operation may adversely affect the fuel cladding performance. Consequently, processes for the separation of plutonium from gallium are currently being developed and/or designed. In particular, two separation processes are being considered: (1) a developmental, potentially lower cost and lower waste, thermal vaporization process following PuO{sub 2} powder preparation, and (2) an off-the-shelf, potentially higher cost and higher waste, aqueous-based ion exchange (IX) process. While it is planned to use the thermal vaporization process should its development prove successful, IX has been recommended as a backup process. This report presents a preconceptual design with material balances for separation of plutonium from gallium by IX.

  9. Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic

    E-Print Network [OSTI]

    Surface modification of indium tin oxide by plasma treatment: An effective method to improve; accepted for publication 7 January 1997 We demonstrate the improvement of an indium tin oxide anode contact conductivity, and effi- ciency as a hole injector into organic materials, indium tin oxide ITO has been widely

  10. Indium tin oxide single-mode waveguide modulator Ray T. Chen, Dan Robinson, Huey Lu, Lev Sadovnik, and Zonh-Zen Ho

    E-Print Network [OSTI]

    Chen, Ray

    Indium tin oxide single-mode waveguide modulator Ray T. Chen, Dan Robinson, Huey Lu, Lev Sadovnik containing an indium tin oxide waveguide, two holographic mirrors, two microprisms, and two ohmic contacts range of interest. The index of refraction of an indium tin oxide film can be represented by 362 / SPIE

  11. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2004. Two companies,

    E-Print Network [OSTI]

    80 INDIUM (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium-efficiency photovoltaic devices. A major manufacturer is testing indium for a new application as a heat-management material in computers, which could increase consumption by 40 metric tons per year. The estimated

  12. Osteomyelitis and infarction in sickle cell hemoglobinopathies: differentiation by combined technetium and gallium scintigraphy

    SciTech Connect (OSTI)

    Amundsen, T.R.; Siegel, M.J.; Siegel, B.A.

    1984-12-01T23:59:59.000Z

    Clinical records and scintigrams were reviewed of 18 patients with sickle cell hemoglobinophaties who had undergone combined technetium and gallium scintigraphy during 22 separate episodes of suspected osseous infection. The combined scintigrams were correctly interpreted as indicating osteomyelitis in four studies. Of 18 studies in patients with infarction, the combined scintigrams were correctly interpreted in 16 and showed either no local accumulation of Ga-67 or less accumulation than that of Tc-99m MDP at symptomatic sites. In the other two studies, the scintigrams were falsely interpreted as indicating osteomyelitis and showed congruent, increased accumulation of both Tc-99, MDP and Ga-67. This pattern must be considered indeterminate. Overall, the results indicate that the combination of technetium and gallium scintigraphy is an effective means to distinguish osteomyelitis from infarction in patients with sickle cell hemoglobinopathies.

  13. Fast neutron scattering on Gallium target at 14.8 MeV

    E-Print Network [OSTI]

    R. Han; R. Wada; Z. Chen; Y. Nie; X. Liu; S. Zhang; P. Ren; B. Jia; G. Tian; F. Luo; W. Lin; J. Liu; F. Shi; M. Huang; X. Ruan; J. Ren; Z. Zhou; H. Huang; J. Bao; K. Zhang; B. Hu

    2014-11-03T23:59:59.000Z

    Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

  14. Fast neutron scattering on Gallium target at 14.8 MeV

    E-Print Network [OSTI]

    Han, R; Chen, Z; Nie, Y; Liu, X; Zhang, S; Ren, P; Jia, B; Tian, G; Luo, F; Lin, W; Liu, J; Shi, F; Huang, M; Ruan, X; Ren, J; Zhou, Z; Huang, H; Bao, J; Zhang, K; Hu, B

    2014-01-01T23:59:59.000Z

    Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

  15. Interaction of hydrogen with gallium vacancies in wurtzite GaN

    SciTech Connect (OSTI)

    Wright, A. F.

    2001-08-01T23:59:59.000Z

    First-principles techniques are used to investigate the interaction of hydrogen with gallium vacancies in wurtzite GaN. The calculations reveal that hydrogen can either compensate a vacancy by donating an electron to a vacancy acceptor level, or passivate the vacancy by forming a hydrogen-vacancy complex. A gallium vacancy can bind up to four hydrogen atoms, and hydrogen removal energies are computed as a function of the number of hydrogen atoms. Removal energies are found to depend strongly on Fermi level and complexes containing more than two hydrogen atoms are predicted to be unstable in n-type GaN. Hydrogen vibration frequencies are computed and compared with previously reported infrared absorption measurements for hydrogen-implanted GaN.

  16. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

    SciTech Connect (OSTI)

    Pak, J.; Lin, W.; Wang, K.; Chinchore, A.; Shi, M.; Ingram, D. C.; Smith, A. R.; Sun, K.; Lucy, J. M.; Hauser, A. J.; Yang, F. Y. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Physics, The Ohio State University, 191 Woodruff Avenue, Columbus, Ohio 43210 (United States)

    2010-07-15T23:59:59.000Z

    The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

  17. Origin of color centers in the flux-grown europium gallium garnet

    SciTech Connect (OSTI)

    Aleksandrovsky, A. S.; Arkhipkin, V. G.; Bezmaternykh, L. N.; Gudim, I. A.; Krylov, A. S. [L. V. Kirensky Institute of Physics, Akademgorodok, Krasnoyarsk 660036, Russia and Siberian Federal University, Krasnoyarsk 660079 (Russian Federation); Vagizov, F. [Department of Physics, Texas A and M University, College Station, Texas 77840 (United States)

    2008-04-15T23:59:59.000Z

    Europium gallium garnet (EuGG) single crystals were grown from fluxes with various contents. Optical absorption spectra of EuGG grown from a flux containing calcium show an additional band in the ultraviolet and blue regions of the spectra as compared to the case of a calcium-free flux. Moessbauer spectra of the samples grown from the fluxes with different additives show no signs of other valence states of the europium ions except for 3+. However, they indicate changes in the crystal field due to the entrance of additive ions. The nature of the additional absorption must be the same as that for calcium-doped gadolinium gallium garnet, i.e., anion vacancies. Moessbauer isotope shifts and quadrupole splitting for EuGG are determined.

  18. Surface reconstructions of cubic gallium nitride ,,001... grown by radio frequency nitrogen plasma molecular beam epitaxy

    E-Print Network [OSTI]

    observed on c-GaN 001 , depending on the growth condi- tions and the substrate. For growth of c-GaN on Ga-rich-grown GaN 001 on MgO 001 substrate. We have deduced that these variant reconstructions are com- posed of Ga; published online 27 October 2006 Cubic GaN has been grown under gallium Ga -rich growth conditions using

  19. Gallium suboxide vapor attack on chromium, cobalt, molybdenum, tungsten and their alloys at 1200 [degrees] C

    SciTech Connect (OSTI)

    Kolman, D. G. (David G.); Taylor, T. N. (Thomas N.); Park, Y. (Youngsoo); Stan, M. (Marius); Butt, D. P. (Darryl P.); Maggiore, C. J. (Carl J.); Tesmer, Joseph R.; Havrilla, G. J. (George J.)

    2004-01-01T23:59:59.000Z

    Our prior work elucidated the failure mechanism of furnace materi als (304 SS, 316 SS, and Hastelloy C-276) exposed to gallium suboxide (Ga{sub 2}O) and/or gallium oxide (Ga{sub 2}O{sub 3}) during plutonium - gallium compound processing. Failure was hypothesized to result from concurrent alloy oxidation/Ga compound reduction followed by Ga uptake. The aim of the current work is to screen candidate replacement materials. Alloys Haynes 25 (49 Co - 20 Cr - 15 W - 10 Ni - 3 Fe - 2 Mn - 0.4 Si, wt%), 52 Mo - 48 Re (wt%), 62 W - 38 Cu (wt%), and commercially pure Cr, Co, Mo, W, and alumina were examined. Preliminary assessments of commercially pure W and Mo - Re suggest that these materials may be suitable for furnace construction. Thermodynamics calculations indicating that materials containing Al, Cr, Mn, Si, and V would be susceptible to oxidation in the presence of Ga{sub 2}O were validated by experimental results. In contrast to that reported previously, an alternate reaction mechanism for Ga uptake, which does not require concurrent alloy oxidation, controls Ga uptake for certain materials. A correlation between Ga solubility and uptake was noted.

  20. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    SciTech Connect (OSTI)

    Kerr, A. J. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Chagarov, E.; Kaufman-Osborn, T.; Kummel, A. C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Gu, S.; Wu, J.; Asbeck, P. M. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Madisetti, S.; Oktyabrsky, S. [Department of Nanoscale Science and Engineering, University at Albany–State University of New York, Albany, New York 12222 (United States)

    2014-09-14T23:59:59.000Z

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

  1. 2010 Minerals Yearbook U.S. Department of the Interior

    E-Print Network [OSTI]

    in 2010. A number of smaller companies produced specialty indium alloys and other indium products (t) of indium. The company has owned the property since 2005 (Lithic Resources Ltd., 2010). Indium and sputtering takes place. Indium can also be recovered from copper-indium-gallium- diselenide (CIGS) solar

  2. Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    : This paper reports on performance enhancement of polymer light-emitting diodes (PLEDs) based on poly(2,5-bis. Keywords : Polymer light emitting diode; Indium tin oxide; Atomic force microscopy; Rutherford backscattering spectroscopy 1. Introduction Polymer light-emitting diodes (PLEDs) have received worldwide

  3. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS Cantilever Resonator

    E-Print Network [OSTI]

    Rubloff, Gary W.

    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 18, NO. 1, FEBRUARY 2009 103 Indium Phosphide MEMS, Subramaniam Kanakaraju, Neil Goldsman, and Reza Ghodssi Abstract--We report a microelectromechanical system, microelectromechanical system (MEMS) cantilevers, pentacene, III­V MEMS. I. INTRODUCTION THE NEED to monitor

  4. Electrochemical study of the properties of indium in room temperature chloroaluminate molten salts

    SciTech Connect (OSTI)

    Liu, J.S.Y.; Sun, I.W. [National Cheng-Kung Univ., Tainan (Taiwan, Province of China). Dept. of Chemistry

    1997-01-01T23:59:59.000Z

    The electrochemistry of indium was studied with voltammetry and chronoamperometry at glassy carbon, tungsten, and nickel electrodes in the basic and acidic aluminum chloride-1,2-dimethyl-3-propylimidazolium chloride molten salt at 27 C. In the basic melt, In(III) is complexed as [InCl{sub 5}]{sup 2{minus}}, which could be reduced to indium metal through a three-electron reduction process. The electrodeposition of indium on glassy carbon and tungsten electrodes involves progressive three-dimensional nucleation on a finite number of active sites with diffusion-controlled growth of the nuclei. The electrodeposition of indium metal on a nickel electrode entails progressive three-dimensional nucleation on a large number of active sites. The formal potentials of the In(III)/In couple in the 44.4 to 55.6 and 49.0 to 51.0 mole percent (m/o) melts are {minus}1.096 and {minus}1.009 V, respectively, vs. Al(III)Al in the 66.7 to 33.3 m/o.

  5. Indium-induced changes in GaN,,0001... surface morphology John E. Northrup

    E-Print Network [OSTI]

    Indium-induced changes in GaN,,0001... surface morphology John E. Northrup Xerox Palo Alto Research-principles calculations of the energetics of the In-terminated GaN 0001 , (0001), (1011), and (1011) surfaces indicate- retical studies to determine the behavior of In on GaN sur- faces. The term surfactant is used often

  6. Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate

    E-Print Network [OSTI]

    Yeh, Chun-Liang

    1993-01-01T23:59:59.000Z

    for the degree of MASTER OF SCIENCE August 1993 Major Subject: Electrical Engineering FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Approved as to style and content by: Mark... and the first modes at 4. 87, 4. 89, 4. 91 GHz have been designed, simulated, and fabricated on a GaAs substrate. A microstrip ring resonator with 3/4 pm coupling gaps and the first mode at 3. 456 GHz also has been fabricated on GaAs. A reliable high yield...

  7. Process development for the fabrication of monolithic optoelectronic resonators on gallium arsenide substrates

    E-Print Network [OSTI]

    Fairchild, Brock Wilson

    1990-01-01T23:59:59.000Z

    with fairly good adhension prop- erties with gallium arsenide and gold. A layer of nickel was deposited on top of the AuGe to reduce the GaAs/AuGe interfacial strain that causes the AuGe to peal during plating. Good adhesion can be formed with GaAs when Au.... 57 LIST OF FIGURES FIGURE Page Typical ring resonator with coupled feed lines. Width/height ratio of photoresist in the gap region. Process steps for the fabrication of resonating structures. (a). Deposition of AuGe and nickel. (b). Spin...

  8. Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys

    SciTech Connect (OSTI)

    Bali, Ashoka; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, Karnataka (India); Wang, Heng; Snyder, G. Jeffrey [Department of Materials Science, California Institute of Technology, Pasadena, California 91125 (United States)

    2014-07-21T23:59:59.000Z

    Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800?K for the sample with 30% Se content.

  9. Dynamics of formation of photoresponse in a detector structure made of gallium arsenide

    SciTech Connect (OSTI)

    Ayzenshtat, G. I., E-mail: ayzen@mail.tomsknet.ru; Lelekov, M. A.; Tolbanov, O. P. [Tomsk State University (Russian Federation)

    2008-04-15T23:59:59.000Z

    The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region was performed under illumination with an infrared light-emitting diode with a wavelength of 0.9 {mu}m. In this case, the situation emerging in the device structure under the effect of X-ray radiation or a high-energy electron beam was simulated. It is shown that the variation in the shape of the output signal with time in this case is caused by variation in the electric field profile due to the capture of holes at deep centers in gallium arsenide. An absolutely different distribution of the electric field emerges in the structure under irradiation of a semitransparent cathode of the structure with a red light-emitting diode, emission of which penetrates into the active region for mere 1 {mu}m. In this case, the transformation of the electric field is caused by the capture of electrons. Under the prolonged effect of such radiation, a space-charge-limited current mode emerges in the device.

  10. Anionic Gallium-Based Metal;#8722;Organic Framework and Its Sorption and Ion-Exchange Properties

    SciTech Connect (OSTI)

    Banerjee, Debasis; Kim, Sun Jin; Wu, Haohan; Xu, Wenqian; Borkowski, Lauren A.; Li, Jing; Parise, John B. (Kwangju); (Rutgers); (SBU)

    2012-04-30T23:59:59.000Z

    A gallium-based metal-organic framework Ga{sub 6}(C{sub 9}H{sub 3}O{sub 6}){sub 8} {center_dot} (C{sub 2}H{sub 8}N){sub 6}(C{sub 3}H{sub 7}NO){sub 3}(H{sub 2}O){sub 26} [1, Ga{sub 6}(1,3,5-BTC){sub 8} {center_dot} 6DMA {center_dot} 3DMF {center_dot} 26H{sub 2}O], GaMOF-1; BTC = benzenetricarboxylate/trimesic acid and DMA = dimethylamine, with space group I{bar 4}3d, a = 19.611(1) {angstrom}, and V = 7953.4(6) {angstrom}{sup 3}, was synthesized using solvothermal techniques and characterized by synchrotron-based X-ray microcrystal diffraction. Compound 1 contains isolated gallium tetrahedra connected by the organic linker (BTC) forming a 3,4-connected anionic porous network. Disordered positively charged ions and solvent molecules are present in the pore, compensating for the negative charge of the framework. These positively charged molecules could be exchanged with alkali-metal ions, as is evident by an ICP-MS study. The H{sub 2} storage capacity of the parent framework is moderate with a H{sub 2} storage capacity of {approx}0.5 wt % at 77 K and 1 atm.

  11. An assessment of the validity of cerium oxide as a surrogate for plutonium oxide gallium removal studies

    SciTech Connect (OSTI)

    Kolman, D.G.; Park, Y.; Stan, M.; Hanrahan, R.J. Jr.; Butt, D.P.

    1999-03-01T23:59:59.000Z

    Methods for purifying plutonium metal have long been established. These methods use acid solutions to dissolve and concentrate the metal. However, these methods can produce significant mixed waste, that is, waste containing both radioactive and chemical hazards. The volume of waste produced from the aqueous purification of thousands of weapons would be expensive to treat and dispose. Therefore, a dry method of purification is highly desirable. Recently, a dry gallium removal research program commenced. Based on initial calculations, it appeared that a particular form of gallium (gallium suboxide, Ga{sub 2}O) could be evaporated from plutonium oxide in the presence of a reducing agent, such as small amounts of hydrogen dry gas within an inert environment. Initial tests using ceria-based material (as a surrogate for PuO{sub 2}) showed that thermally-induced gallium removal (TIGR) from small samples (on the order of one gram) was indeed viable. Because of the expense and difficulty of optimizing TIGR from plutonium dioxide, TIGR optimization tests using ceria have continued. This document details the relationship between the ceria surrogate tests and those conducted using plutonia.

  12. Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy

    E-Print Network [OSTI]

    Li, Lian

    Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride to examine the effects of carbon tetrachloride concentration and temperature on the morphology of carbon with increasing carbon tetrachloride concentration. Step bunching and pinning was observed at a IV/III ratio

  13. Simulation assisted design of a gallium phosphide np photovoltaic junction Charles R. Allen, Jong-Hyeok Jeon , Jerry M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    University, 1205 W State Street, West Lafayette, IN, USA a r t i c l e i n f o Article history: Received 27 February 2010 Keywords: Gallium phosphide Solar cell Multi-junction CPV Simulation a b s t r a c with measurements of the dark and light response. The light current was measured under an illumination of air mass

  14. Organometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region

    E-Print Network [OSTI]

    Collins, George J.

    Organometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen 1991; accepted for publication 3 April 1992) hz situ generated arsenic hydrides are reacted downstream with trimethylgallium (TMGa), both in the presence of and in the absence of a downstream hydrogen afterglow plasma. The

  15. Scanning Tunneling Microscopy and Surface Simulation of Zinc-Blende GaN(001) Intrinsic 4 Reconstruction: Linear Gallium Tetramers?

    E-Print Network [OSTI]

    Reconstruction: Linear Gallium Tetramers? Hamad A. AL-Brithen, Rong Yang, Muhammad B. Haider, Costel Constantin and occupied states, in agreement with surface simulations based on the 4 1 linear tetramer model the existence of linear Ga tetramers. DOI: PACS numbers: 68.35.Bs, 68.37.Ef, 73.20.At Based on both fundamental

  16. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    SciTech Connect (OSTI)

    Muhammad, R.; Ahamad, R. [Sustainability Research Alliance, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Ibrahim, Z.; Othaman, Z. [Physic Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

    2014-03-05T23:59:59.000Z

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  17. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect (OSTI)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01T23:59:59.000Z

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  18. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

    SciTech Connect (OSTI)

    Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A. [and others

    1998-01-01T23:59:59.000Z

    A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

  19. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath (Littleton, CO)

    2007-11-20T23:59:59.000Z

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  20. Using indium tin oxide material to implement the imaging of microwave plasma ignition process

    SciTech Connect (OSTI)

    Wang, Qiang; Hou, Lingyun; Zhang, Guixin, E-mail: guixin@mail.tsinghua.edu.cn; Zhang, Boya; Liu, Cheng [Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China); Wang, Zhi; Huang, Jian [State Key Laboratory of Automotive Safety and Energy, Tsinghua University, Beijing 100084 (China)

    2014-02-17T23:59:59.000Z

    In this paper, a method is introduced to get global observation of microwave plasma ignition process at high pressure. A microwave resonator was designed with an indium tin oxide coated glass at bottom. Microwave plasma ignition was implemented in methane and air mixture at 10 bars by a 2?ms-3?kW-2.45?GHz microwave pulse, and the high speed images of the ignition process were obtained. The images visually proved that microwave plasma ignition could lead to a multi-point ignition. The system may also be applied to obtain Schlieren images, which is commonly used to observe the development of flame kernel in an ignition process.

  1. Flexible inverted polymer solar cells with an indium-free tri-layer cathode

    SciTech Connect (OSTI)

    El Hajj, Ahmad; Lucas, Bruno, E-mail: bruno.lucas@unilim.fr; Schirr-Bonnans, Martin; Ratier, Bernard [XLIM-CNRS 7252, Université de Limoges, 123 avenue Albert Thomas, 87060 Limoges (France); Kraft, Thomas M. [XLIM-CNRS 7252, Université de Limoges, 123 avenue Albert Thomas, 87060 Limoges (France); Department of Chemistry, Chernoff Hall, Queen's University, Kingston, Ontario K7L 3N6 (Canada); Torchio, Philippe [Institut Matériaux Microélectronique Nanosciences de Provence, Aix-Marseille Université, IM2NP-CNRS 7334, Domaine Universitaire de Saint-Jérôme, Service 231, 13 397 Marseille Cedex 20 (France)

    2014-01-21T23:59:59.000Z

    Indium tin oxide (ITO)-free inverted polymer solar cells (PSCs) have been fabricated without the need of an additional electron transport layer. The indium-free transparent electrode consists of a tri-layer stack ZnO (30?nm)/Ag (14?nm)/ZnO (30?nm) deposited on glass and plastic substrates via ion-beam sputtering. The tri-layer electrodes exhibit similar physical properties to its ITO counterpart, specifically yielding high transmittance and low resistivity (76.5% T at 550?nm, R{sub sq} of 8 ?/?) on plastic substrates. The novel tri-layer electrode allows for the fabrication of inverted PSCs without the additional ZnO interfacial layer commonly deposited between ITO and the photoactive layer. This allows for the preparation of thinner plastic solar cells using less material than conventional architectures. Initial studies involving the newly realized architecture (tri-layer electrode/P3HT:PCBM/PEDOT:PSS/Ag) have shown great promise for the transition from ITO to other viable electrodes in organic electronics.

  2. Leaching of indium from obsolete liquid crystal displays: Comparing grinding with electrical disintegration in context of LCA

    SciTech Connect (OSTI)

    Dodbiba, Gjergj, E-mail: dodbiba@sys.t.u-tokyo.ac.jp [Department of System Innovation, Graduate School of Engineering, University of Tokyo (Japan); Nagai, Hiroki; Wang Lipang; Okaya, Katsunori; Fujita, Toyohisa [Department of System Innovation, Graduate School of Engineering, University of Tokyo (Japan)

    2012-10-15T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Two pre-treatment methods, prior to leaching of indium from obsolete LCD modules, were described. Black-Right-Pointing-Pointer Conventional grinding and electrical disintegration have been evaluated and compared in the context of LCA. Black-Right-Pointing-Pointer Experimental data on the leaching capacity for indium and the electricity consumption of equipment were inputted into the LCA model in order to compare the environmental performance of each method. Black-Right-Pointing-Pointer An estimate for the environmental performance was calculated as the sum of six impact categories. Black-Right-Pointing-Pointer Electrical disintegration method outperforms conventional grinding in all impact categories. - Abstract: In order to develop an effective recycling system for obsolete Liquid Crystal Displays (LCDs), which would enable both the leaching of indium (In) and the recovery of a pure glass fraction for recycling, an effective liberation or size-reduction method would be an important pre-treatment step. Therefore, in this study, two different types of liberation methods: (1) conventional grinding, and (2) electrical disintegration have been tested and evaluated in the context of Life Cycle Assessment (LCA). In other words, the above-mentioned methods were compared in order to find out the one that ensures the highest leaching capacity for indium, as well as the lowest environmental burden. One of the main findings of this study was that the electrical disintegration was the most effective liberation method, since it fully liberated the indium containing-layer, ensuring a leaching capacity of 968.5 mg-In/kg-LCD. In turn, the estimate for the environmental burden was approximately five times smaller when compared with the conventional grinding.

  3. IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale

    E-Print Network [OSTI]

    Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

    2014-01-01T23:59:59.000Z

    Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

  4. 2011 Minerals Yearbook U.S. Department of the Interior

    E-Print Network [OSTI]

    Cs) and optoelectronic devices [laser diodes, light-emitting diodes (lEDs), photodetectors, and solar cells]. Gallium solar energy systems by about 75%, and thereby allow copper-indium-gallium diselenide (CiGS) solar

  5. Investigation of buried homojunctions in p -InP formed during sputter deposition of both indium tin oxide and indium oxide

    SciTech Connect (OSTI)

    Gessert, T.A.; Li, X.; Wanlass, M.W.; Nelson, A.J.; Coutts, T.J. (Solar Energy Research Institute, Golden, CO (USA))

    1990-05-01T23:59:59.000Z

    Although it is apparent that direct current (dc) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single crystal {ital p}-type InP, the actual mechanism of type conversion of the InP surface is not clear, nor is it immediately obvious how further improvements may be achieved. Previously, we have suggested that type conversion is caused by indiffusion of Sn during the ITO deposition process and additionally demonstrated that this effect is strengthened by the presence of hydrogen in the sputtering gas. Recently, however, efficiencies of almost 17% (Global) have been achieved for cells fabricated by sputter depositing In{sub 2}O{sub 3}(IO) alone, strongly suggesting that the Sn may not be an essential part of type conversion. In this work, a variety of electrical and optical techniques has been used to assess the changes at the ITO/InP and IO/InP interfaces. From these, it is concluded that several mechanisms, including passivation of acceptors by hydrogen and sputter damage,'' occur simultaneously. This analysis suggests several directions for further improvement of these devices.

  6. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    SciTech Connect (OSTI)

    Hu, Long, E-mail: hulong-1226@126.com [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049 (China); Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China); Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China)

    2014-03-07T23:59:59.000Z

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2?kV is applied, after an exciting optical pulse with energy of 1??J arrival, the structure with thickness of 650??m reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (?4?kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ?4?kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed.

  7. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect (OSTI)

    Allen, T. G., E-mail: thomas.allen@anu.edu.au; Cuevas, A. [Research School of Engineering, Australian National University, Canberra 0200 (Australia)

    2014-07-21T23:59:59.000Z

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1?cm/s have been recorded with films less than 4.5?nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2?Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5?eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9?eV.

  8. Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

    SciTech Connect (OSTI)

    Xia, Minggang, E-mail: xiamg@mail.xjtu.edu.cn [Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China); Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Cheng, Zhaofang; Han, Jinyun; Zhang, Shengli [Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China); Zheng, Minrui [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Sow, Chorng-Haur [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); National University of Singapore Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore 117542 (Singapore); Thong, John T. L. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Li, Baowen [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); National University of Singapore Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore 117542 (Singapore); Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2014-05-15T23:59:59.000Z

    The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga{sup +}) implantation at room temperature. Our results show that Ga{sup +} implantation enhances electrical conductivity by one order of magnitude from 1.01 × 10{sup 3} ?{sup ?1}m{sup ?1} to 1.46 × 10{sup 4} ?{sup ?1}m{sup ?1} and reduces its thermal conductivity by one order of magnitude from 12.7 Wm{sup ?1}K{sup ?1} to 1.22 Wm{sup ?1}K{sup ?1} for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga{sup +} implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga{sup +} point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga{sup +}-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

  9. Crystal structure and electron microprobe analyses of a lanthanum lutetium gallium garnet

    SciTech Connect (OSTI)

    Parise, J.B.; Harlow, R.L.; Shannon, R.D. (Central Research and Development Department, E. I. DuPont De Nemours and Co., Experimental Station, Wilmington, Delaware 19880-0228 (United States)); Kwei, G.H. (LANSCE, MS-H805, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)); Allik, T.H. (Science Applications International Corporation, 1710 Goodridge Dr., P.O. Box 1303, McLean, Virginia 22102 (United States)); Armstrong, J.T. (Department of Geological and Planetary Sciences, California Institute of Technology, Pasadena, California 91125 (United States))

    1992-09-15T23:59:59.000Z

    Single-crystal electron microprobe analysis of a lanthanum lutetium gallium garnet has resulted in a composition of La{sub 2.37}Nd{sub 0.07}Pb{sub 0.01}Lu{sub 2.54}Cr{sub 0.01} Ga{sub 3.00}O{sub 12}. This composition gives better agreement between observed and calculated total dielectric polarizabilities than previously reported compositions (La{sub 2.26--2.32}Nd{sub 0.04}Lu{sub 2.57--2.63}Ga{sub 3.07}O{sub 12} by x-ray fluorescence and La{sub 2.655}Nd{sub 0.027}Lu{sub 2.656}Ga{sub 2.655}O{sub 12} by inductively coupled plasma analyses), and does not imply the crystal-chemically improbable presence of Lu{sup 3+} in the tetrahedral site. X-ray and neutron crystal-structure analyses have confirmed that little or no Lu resides in this site.

  10. Optical waveguiding properties into porous gallium nitride structures investigated by prism coupling technique

    SciTech Connect (OSTI)

    Alshehri, Bandar; Dogheche, Elhadj, E-mail: elhadj.dogheche@univ-valenciennes.fr [Institute Electronics, Microelectronics and Nanotechnology (IEMN CNRS), University of Valenciennes, Villeneuve d'Ascq (France); Lee, Seung-Min; Kang, Jin-Ho; Ryu, Sang-Wan, E-mail: sangwan@chonnam.ac.kr [Department of Physics, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Gong, Su-Hyun; Cho, Yong-Hoon [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of)

    2014-08-04T23:59:59.000Z

    In order to modulate the refractive index and the birefringence of Gallium Nitride (GaN), we have developed a chemical etching method to perform porous structures. The aim of this research is to demonstrate that optical properties of GaN can be tuned by controlling the pores density. GaN films are prepared on sapphire by metal organic chemical vapor deposition and the microstructure is characterized by transmission electron microscopy, and scanning electron microscope analysis. Optical waveguide experiment is demonstrated here to determine the key properties as the ordinary (n{sub 0}) and extraordinary (n{sub e}) refractive indices of etched structures. We report here the dispersion of refractive index for porous GaN and compare it to the bulk material. We observe that the refractive index decreases when the porous density p is increased: results obtained at 0.975??m have shown that the ordinary index n{sub 0} is 2.293 for a bulk layer and n{sub 0} is 2.285 for a pores density of 20%. This value corresponds to GaN layer with a pore size of 30?nm and inter-distance of 100?nm. The control of the refractive index into GaN is therefore fundamental for the design of active and passive optical devices.

  11. Optimal composition of europium gallium oxide thin films for device applications

    SciTech Connect (OSTI)

    Wellenius, P.; Muth, J. F. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Smith, E. R. [Kratos Defense and Security Solutions, Inc., 5030 Bradford Drive, Huntsville, Alabama 35805 (United States); LeBoeuf, S. M. [Valencell, Inc., 920 Main Campus Drive, Raleigh, North Carolina 27615 (United States); Everitt, H. O. [Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States) and Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2010-05-15T23:59:59.000Z

    Europium gallium oxide (Eu{sub x}Ga{sub 1-x}){sub 2}O{sub 3} thin films were deposited on sapphire substrates by pulsed laser deposition with varying Eu content from x=2.4 to 20 mol %. The optical and physical effects of high europium concentration on these thin films were studied using photoluminescence (PL) spectroscopy, x-ray diffraction (XRD), and Rutherford backscattering spectrometry. PL spectra demonstrate that emission due to the {sup 5}D{sub 0} to {sup 7}F{sub J} transitions in Eu{sup 3+} grows linearly with Eu content up to 10 mol %. Time-resolved PL indicates decay parameters remain similar for films with up to 10 mol % Eu. At 20 mol %, however, PL intensity decreases substantially and PL decay accelerates, indicative of parasitic energy transfer processes. XRD shows films to be polycrystalline and beta-phase for low Eu compositions. Increasing Eu content beyond 5 mol % does not continue to modify the film structure and thus, changes in PL spectra and decay cannot be attributed to structural changes in the host. These data indicate the optimal doping for optoelectronic devices based on (Eu{sub x}Ga{sub 1-x}){sub 2}O{sub 3} thin films is between 5 and 10 mol %.

  12. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, Andre

    2013-01-01T23:59:59.000Z

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate).more »These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  13. Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics

    SciTech Connect (OSTI)

    Doggart, P.; Bristow, N.; Kettle, J., E-mail: j.kettle@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean St., Bangor, Gwynedd, Wales LL57 1UT (United Kingdom)

    2014-09-14T23:59:59.000Z

    The influence of indium tin oxide [(In{sub 2}O{sub 3}:Sn), ITO] material properties on the output performance of organic photovoltaic (OPV) devices has been modelled and investigated. In particular, the effect of altering carrier concentration (n), thickness (t), and mobility (?{sub e}) in ITO films and their impact on the optical performance, parasitic resistances and overall efficiency in OPVs was studied. This enables optimal values of these parameters to be calculated for solar cells made with P3HT:PC{sub 61}BM and PCPDTBT:PC{sub 71}BM active layers. The optimal values of n, t and ?{sub e} are not constant between different OPV active layers and depend on the absorption spectrum of the underlying active layer material system. Consequently, design rules for these optimal values as a function of donor bandgap in bulk-heterojunction active layers have been formulated.

  14. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Xu, Rui; He, Jian [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Song, Yang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Li, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Zaslavsky, A. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Paine, D. C., E-mail: David-Paine@brown.edu [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-09-01T23:59:59.000Z

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ?10{sup ?2?}??cm{sup 2}, ?3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ?27?cm{sup 2}/V?s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  15. Appearance of acute gouty arthritis on indium-111-labeled leukocyte scintigraphy

    SciTech Connect (OSTI)

    Palestro, C.J.; Vega, A.; Kim, C.K.; Swyer, A.J.; Goldsmith, S.J. (Mt. Sinai Medical Center, New York, NY (USA))

    1990-05-01T23:59:59.000Z

    Indium-111-labeled leukocyte scintigraphy was performed on a 66-yr-old male with polyarticular acute gouty arthritis. Images revealed intense labeled leukocyte accumulation in a pattern indistinguishable from septic arthritis, in both knees and ankles, and the metatarsophalangeal joint of both great toes, all of which were involved in the acute gouty attack. Joint aspirate as well as blood cultures were reported as no growth; the patient was treated with intravenous colchicine and ACTH for 10 days with dramatic improvement noted. Labeled leukocyte imaging, repeated 12 days after the initial study, revealed near total resolution of joint abnormalities, concordant with the patient's clinical improvement. This case demonstrates that while acute gouty arthritis is a potential pitfall in labeled leukocyte imaging, in the presence of known gout, it may provide a simple, objective, noninvasive method of evaluating patient response to therapy.

  16. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group; Mendelsberg, Rueben J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group and Molecular Foundry; Zhu, Jiaqi [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Han, Jiecai [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Anders, Andre [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group

    2013-01-01T23:59:59.000Z

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  17. (Data in metric tons, unless otherwise noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1997. Domestically

    E-Print Network [OSTI]

    --United States: 1993 1994 1995 1996 1997e Production, refinery -- -- -- -- -- Imports for consumption 73.4 70 for the indium market remains promising. World Refinery Production, Reserves, and Reserve Base: Refinery

  18. ydrocarbon detector for the remote sensing of vehicle exhaust emissions

    E-Print Network [OSTI]

    Denver, University of

    -nitrogen-cooled indium antimonide detectors, a rotating gas filter correlation cell which pre- cluded the simultaneous, and associated electronics. The new instrument uses four Peltier cooled lead selenide (PbSe) detectors, one each

  19. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

    SciTech Connect (OSTI)

    Browne, David A.; Young, Erin C.; Lang, Jordan R.; Hurni, Christophe A.; Speck, James S. [Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States)

    2012-07-15T23:59:59.000Z

    The effects of NH{sub 3} flow, group III flux, and substrate growth temperature on indium incorporation and surface morphology have been investigated for bulk InGaN films grown by ammonia molecular beam epitaxy. The incorporation of unintentional impurity elements (H, C, O) in InGaN films was studied as a function of growth temperature for growth on polar (0001) GaN on sapphire templates, nonpolar (1010) bulk GaN, and semipolar (1122), (2021) bulk GaN substrates. Enhanced indium incorporation was observed on both (1010) and (2021) surfaces relative to c-plane, while reduced indium incorporation was observed on (1122) for co-loaded conditions. Indium incorporation was observed to increase with decreasing growth temperature for all planes, while being relatively unaffected by the group III flux rates for a 1:1 Ga:In ratio. Indium incorporation was found to increase at the expense of a decreased growth rate for higher ammonia flows; however, smooth surface morphology was consistently observed for growth on semipolar orientations. Increased concentrations of oxygen and hydrogen were observed on semipolar and nonpolar orientations with a clear trend of increased hydrogen incorporation with indium content.

  20. Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys

    SciTech Connect (OSTI)

    Sreenivasulu, G.; Piskulich, E.; Srinivasan, G., E-mail: srinivas@oakland.edu [Physics Department, Oakland University, Rochester, Michigan 48409 (United States); Qu, P.; Qu, Hongwei [Electrical and Computer Engineering, Oakland University, Rochester, Michigan 48309 (United States); Petrov, V. M. [Institute of Electronic Information Systems, Novgorod State University, Veliky Novgorod (Russian Federation); Fetisov, Y. K. [Moscow State Technical University of Radio Engineering, Electronics and Automation, Moscow 19454 (Russian Federation); Nosov, A. P. [Institute of Metal Physics, Ural Division of Russian Academy of Sciences, 18 S. Kovalevskaya St, Ekaterinburg 620990 (Russian Federation)

    2014-07-21T23:59:59.000Z

    Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

  1. A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

    SciTech Connect (OSTI)

    Wagner, Hannes [Department of Solar Energy, Institute Solid-State Physics, Leibniz University of Hannover, Appelstr. 2, 30167 Hannover (Germany); ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, NSW 2052 (Australia); Ohrdes, Tobias [Institute for Solar Energy Research Hamelin (ISFH), 31860 Emmerthal (Germany); Dastgheib-Shirazi, Amir [Div. Photovoltaics, Department of Physics, University of Konstanz, 78457 Konstanz (Germany); Puthen-Veettil, Binesh; König, Dirk [ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, NSW 2052 (Australia); Altermatt, Pietro P. [Department of Solar Energy, Institute Solid-State Physics, Leibniz University of Hannover, Appelstr. 2, 30167 Hannover (Germany)

    2014-01-28T23:59:59.000Z

    The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)–(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

  2. Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy

    SciTech Connect (OSTI)

    Wang Yiyi; Oezcan, Ahmet S.; Sanborn, Christopher; Ludwig, Karl F.; Bhattacharyya, Anirban; Chandrasekaran, Ramya; Moustakas, Theodore D.; Zhou Lin; Smith, David J. [Physics Department, Boston University, Boston, Massachusetts 02215 (United States); Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287, USA and School of Materials, Arizona State University, Tempe, Arizona 85287 (United States)

    2007-10-01T23:59:59.000Z

    Self-organized gallium nitride nanodots have been fabricated using droplet heteroepitaxy on c-plane sapphire by plasma-assisted molecular beam epitaxy at different substrate temperatures and Ga fluxes. Nanoscale Ga droplets were initially formed on the sapphire substrate at high temperatures by Ga deposition from an effusion cell in an ultrahigh vacuum growth chamber. Subsequently, the droplets were converted into GaN nanodots using a nitrogen plasma source. The process was monitored and controlled using real-time grazing-incidence small-angle x-ray scattering. The samples were examined postgrowth by in situ grazing incidence x-ray diffraction and reflection high-energy electron diffraction, which confirmed the epitaxial relationship between the GaN nanodots and the sapphire surface. X-ray diffraction indicated that the wurtzite phase was dominant at higher substrate temperature (710 deg. C), but a mixture of wurtzite and zinc blende phases was present at a substrate temperature of 620 deg. C. Ex situ atomic force microscopy and transmission electron microscopy analyses showed that the dot size distribution was bimodal. A thin GaN continuous layer of {approx} three monolayers thick was observed by transmission electron microscopy on the sample grown at a substrate temperature of 620 deg. C, but no such layer was observed for the substrate temperature of 710 deg. C. This suggests that there is little mobility of Ga atoms in contact with the sapphire substrate at the lower temperature so that they cannot easily diffuse to nearby droplets and instead form a thin layer covering the surface.

  3. Real-Time X-ray Studies of Gallium Nitride Nanodot Formation by Droplet Heteroepitaxy

    SciTech Connect (OSTI)

    Wang,Y.; Ozcan, A.; Sanborn, C.; Ludwig, K.; Bhattacharyya, A.; Chandrasekaran, R.; Moustakas, T.; Zhou, L.; Smith, D.

    2007-01-01T23:59:59.000Z

    Self-organized gallium nitride nanodots have been fabricated using droplet heteroepitaxy on c-plane sapphire by plasma-assisted molecular beam epitaxy at different substrate temperatures and Ga fluxes. Nanoscale Ga droplets were initially formed on the sapphire substrate at high temperatures by Ga deposition from an effusion cell in an ultrahigh vacuum growth chamber. Subsequently, the droplets were converted into GaN nanodots using a nitrogen plasma source. The process was monitored and controlled using real-time grazing-incidence small-angle x-ray scattering. The samples were examined postgrowth by in situ grazing incidence x-ray diffraction and reflection high-energy electron diffraction, which confirmed the epitaxial relationship between the GaN nanodots and the sapphire surface. X-ray diffraction indicated that the wurtzite phase was dominant at higher substrate temperature (710? C), but a mixture of wurtzite and zinc blende phases was present at a substrate temperature of 620? C. Ex situ atomic force microscopy and transmission electron microscopy analyses showed that the dot size distribution was bimodal. A thin GaN continuous layer of ? three monolayers thick was observed by transmission electron microscopy on the sample grown at a substrate temperature of 620? C, but no such layer was observed for the substrate temperature of 710? C. This suggests that there is little mobility of Ga atoms in contact with the sapphire substrate at the lower temperature so that they cannot easily diffuse to nearby droplets and instead form a thin layer covering the surface.

  4. Synthesis of Germanium-Gallium-Tellurium (Ge-Ga-Te) ceramics by ball-milling and sintering Mathieu Hubert, Elena Petracovschi, Xiang-Hua Zhang and Laurent Calvez*

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Synthesis of Germanium-Gallium-Tellurium (Ge-Ga-Te) ceramics by ball-milling and sintering Mathieu, France *laurent.calvez@univ-rennes1.fr Tel: (33) 2 23 23 67 13 Fax: (33) 2 23 23 56 11 Abstract, the semiconductor behavior of CdTe is exploited for the production of solar panels [1, 2], the rapid and reversible

  5. The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H. Qi, and R. F. Hicksa)

    E-Print Network [OSTI]

    Li, Lian

    The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H, California 90095 Received 26 June 1997; accepted for publication 30 December 1997 Carbon tetrachloride of steps during the vapor-phase epitaxial growth of III­V compound semiconductors.3,4 Carbon tetrachloride

  6. Atomic layer structure of manganese atoms on wurtzite gallium nitride Abhijit Chinchore, Kangkang Wang, Wenzhi Lin, Jeongihm Pak, and Arthur R. Smitha

    E-Print Network [OSTI]

    Atomic layer structure of manganese atoms on wurtzite gallium nitride ,,0001¯... Abhijit Chinchore on wurtzite GaN 0001¯ . The surface is monitored using reflection high energy electron diffraction, which to grow with an abrupt interface and well- defined epitaxial orientation on top of wurtzite w -GaN. Re

  7. Performance enhancement of organic light-emitting diodes by chlorine plasma treatment of indium tin oxide

    SciTech Connect (OSTI)

    Cao, X. A.; Zhang, Y. Q. [Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia 26506 (United States)

    2012-04-30T23:59:59.000Z

    The characteristics of green phosphorescent organic light-emitting diodes (OLEDs) fabricated on ITO/glass substrates pretreated with low-energy O{sub 2} and Cl{sub 2} plasma were compared. At 20 mA/cm{sup 2}, the OLEDs with O{sub 2} and Cl{sub 2} plasma-treated indium tin oxide (ITO) had voltages of 9.6 and 7.6 eV, and brightness of 9580 and 12380 cd/m{sup 2}, respectively. At {approx}10{sup 4} cd/m{sup 2}, the latter had a 30% higher external quantum efficiency and a 74% higher power efficiency. Photoelectron spectroscopies revealed that Cl{sub 2} plasma treatment created stable In-Cl bonds and raised the work function of ITO by up to 0.9 eV. These results suggest that the better energy level alignment at the chlorinated ITO/organic interface enhances hole injection, leading to more efficient and more reliable operation of the OLEDs. The developed plasma chlorination process is very effective for surface modification of ITO and compatible with the fabrication of various organic electronics.

  8. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung-Hee University, 1 Seocheon-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Noh, Yong-Jin; Na, Seok-In [Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeonju-si, Jeollabuk-do 561-756 (Korea, Republic of)

    2014-09-01T23:59:59.000Z

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8?nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55?×?10{sup ?5} ? cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54?×?10{sup ?3} ?{sup ?1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10?nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

  9. Interfacial reactions between indium tin oxide and triphenylamine tetramer layers induced by photoirradiation

    SciTech Connect (OSTI)

    Satoh, Toshikazu; Fujikawa, Hisayoshi [Toyota Central R and D Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Yamamoto, Ichiro; Murasaki, Takanori; Kato, Yoshifumi [Toyota Industries Corporation, 8 Chaya, Kyowa, Obu, Aichi 474-8601 (Japan)

    2008-05-01T23:59:59.000Z

    The effects of photoirradiation on the interfacial chemical reactions between indium tin oxide (ITO) films and layers of triphenylamine tetramer (TPTE) were investigated by using in situ x-ray photoelectron spectroscopy (XPS). Thin TPTE layers deposited onto sputter-deposited ITO films were irradiated with violet light-emitting diodes (peak wavelength: 380 nm). Shifts in the peak positions of spectral components that originated in the organic layer toward the higher binding-energy side were observed in the XPS profiles during the early stages of irradiation. No further peak shifts were observed after additional irradiation. An increase in the ratio of the organic component in the O 1s spectra was also observed during the photoirradiation. The ratio of the organic component increased in proportion to the cube root of the irradiation time. These results suggest that photoirradiation induces an increase in the height of the carrier injection barrier at the interface between TPTE and ITO in the early stages of the irradiation, possibly due to the rapid diffusion controlled formation and growth of an oxidized TPTE layer, which is considered to act as a high resistance layer.

  10. Measurement of the solar neutrino capture rate with gallium metal, part III

    SciTech Connect (OSTI)

    Elliott, Steven Ray [Los Alamos National Laboratory

    2008-01-01T23:59:59.000Z

    The Russian-American experiment SAGE began to measure the solar neutrino capture rate with a target of gallium metal in December 1989. Measurements have continued with only a few brief interruptions since that time. In this article we present the experimental improvements in SAGE since its last published data summary in December 2001. Assuming the solar neutrino production rate was constant during the period of data collection, combined analysis of 168 extractions through December 2007 gives a capture rate of solar neutrinos with energy more than 233 keY of 65.4{sup +3.1}{sub 3.0} (stat) {sup +2.6}{sub -2.8} (syst) SNU. The weighted average of the results of all three Ga solar neUlrino experiments, SAGE, Gallex, and GNO, is now 66.1 {+-} 3.1 SNU, where statistical and systematic uncertainties have been combined in quadrature. During the recent period of data collection a new test of SAGE was made with a reactor-produced {sup 37}Ar neutrino source. The ratio of observed to calculated rates in this experiment, combined with the measured rates in the three prior {sup 51}Cr neutrino-source experiments with Ga, is 0.88 {+-} 0.05. A probable explanation for this low result is that the cross section for neutrino capture by the two lowest-lying excited states in {sup 71}Ge has been overestimated. If we assume these cross sections are zero, then the standard solar model including neutrino oscillations predicts a total capture rate in Ga in the range of 63--67 SNU with an uncertainly of about 5%, in good agreement with experiment. We derive the current value of the pp neutrino flux produced in the Sun to be {phi}{sup {circle_dot}}{sub pp} = (6.1 {+-} 0.8) x 10{sup 10}/(cm{sup 2} s), which agrees well with the flux predicted by the standard solar model. Finally, we make several tests and show that the data are consistent with the assumption that the solar neutrino production rate is constant in time.

  11. Effect of Thermal Annealing in Ammonia on the Properties of InGaN Nanowires with Different Indium Concentrations

    SciTech Connect (OSTI)

    Hahn, Cristopher; Cordones, Amy; Andrews, Sean; Gao, Hanwei; Fu, Anthony; Leone, Stephen; Yang, Peidong

    2012-10-02T23:59:59.000Z

    The utility of an annealing procedure in ammonia ambient is investigated for improving the optical characteristics of InxGa1?xN nanowires (0.07 ? x ? 0.42) grown on c-Al2O3 using a halide chemical vapor deposition method. Morphological studies using scanning electron microscopy confirm that the nanowire morphology is retained after annealing in ammonia at temperatures up to 800 ?C. However, significant indium etching and composition inhomogeneities are observed for higher indium composition nanowires (x = 0.28, 0.42), as measured by energy-dispersive X-ray spectroscopy and Z-contrast scanning transmission electron microscopy. Structural analyses, using X-ray diffraction and high-resolution transmission electron microscopy, indicate that this is a result of the greater thermal instability of higher indium composition nanowires. The effect of these structural changes on the optical quality of InGaN nanowires is examined using steady-state and time-resolved photoluminescence measurements. Annealing in ammonia enhances the integrated photoluminescence intensity of InxGa1?xN nanowires by up to a factor of 4.11 ? 0.03 (for x = 0.42) by increasing the rate of radiative recombination. Fitting of photoluminescence decay curves to a Kohlrausch stretched exponential indicates that this increase is directly related to a larger distribution of recombination rates from composition inhomogeneities caused by annealing. The results demonstrate the role of thermal instability on the improved optical properties of InGaN nanowires annealed in ammonia.

  12. Compact, Interactive Electric Vehicle Charger: Gallium-Nitride Switch Technology for Bi-directional Battery-to-Grid Charger Applications

    SciTech Connect (OSTI)

    None

    2010-10-01T23:59:59.000Z

    ADEPT Project: HRL Laboratories is using gallium nitride (GaN) semiconductors to create battery chargers for electric vehicles (EVs) that are more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger is important because it would help improve the overall performance of the EV. GaN semiconductors process electricity faster than the silicon semiconductors used in most conventional EV battery chargers. These high-speed semiconductors can be paired with lighter-weight electrical circuit components, which helps decrease the overall weight of the EV battery charger. HRL Laboratories is combining the performance advantages of GaN semiconductors with an innovative, interactive battery-to-grid energy distribution design. This design would support 2-way power flow, enabling EV battery chargers to not only draw energy from the power grid, but also store and feed energy back into it.

  13. An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun

    SciTech Connect (OSTI)

    Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

    2009-05-04T23:59:59.000Z

    Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

  14. Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

    SciTech Connect (OSTI)

    Ni, Chih-Jui; Chau-Nan Hong, Franklin, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

    2014-05-15T23:59:59.000Z

    Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500?°C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300?°C. The N:Ga ratio of the film grown at 500?°C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

  15. A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

    SciTech Connect (OSTI)

    Deka, Angshuman; Nanda, Karuna Kar [Materials Research Centre, Indian Institute of Science, Bangalore - 560012 (India)

    2013-06-15T23:59:59.000Z

    ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

  16. Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

    SciTech Connect (OSTI)

    King, Sean W., E-mail: sean.king@intel.com; Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-11-01T23:59:59.000Z

    Scandium nitride (ScN) is a group IIIB transition metal nitride semiconductor with numerous potential applications in electronic and optoelectronic devices due to close lattice matching with gallium nitride (GaN). However, prior investigations of ScN have focused primarily on heteroepitaxial growth on substrates with a high lattice mismatch of 7%–20%. In this study, the authors have investigated ammonia (NH{sub 3}) gas source molecular beam epitaxy (NH{sub 3}-GSMBE) of ScN on more closely lattice matched silicon carbide (SiC) and GaN surfaces (<3% mismatch). Based on a thermodynamic analysis of the ScN phase stability window, NH{sub 3}-GSMBE conditions of 10{sup ?5}–10{sup ?4} Torr NH{sub 3} and 800–1050?°C where selected for initial investigation. In-situ x-ray photoelectron spectroscopy (XPS) and ex-situ Rutherford backscattering measurements showed all ScN films grown using these conditions were stoichiometric. For ScN growth on 3C-SiC (111)-(?3?×??3)R30° carbon rich surfaces, the observed attenuation of the XPS Si 2p and C 1s substrate core levels with increasing ScN thickness indicated growth initiated in a layer-by-layer fashion. This was consistent with scanning electron microscopy (SEM) images of 100–200?nm thick films that revealed featureless surfaces. In contrast, ScN films grown on 3C-SiC (111)-(3?×?3) and 3C-SiC (100)-(3?×?2) silicon rich surfaces were found to exhibit extremely rough surfaces in SEM. ScN films grown on both 3C-SiC (111)-(?3?×??3)R30° and 2H-GaN (0001)-(1?×?1) epilayer surfaces exhibited hexagonal (1?×?1) low energy electron diffraction patterns indicative of (111) oriented ScN. X-ray diffraction ?-2? rocking curve scans for these same films showed a large full width half maximum of 0.29° (1047?arc sec) consistent with transmission electron microscopy images that revealed the films to be poly-crystalline with columnar grains oriented at ?15° to the [0001] direction of the 6H-SiC (0001) substrate. In-situ reflection electron energy loss spectroscopy measurements determined the band-gap for the NH{sub 3}-GSMBE ScN films to be 1.5?±?0.3 eV, and thermal probe measurements indicated all ScN films to be n-type. The four point probe sheet resistance of the ScN films was observed to increase with decreasing growth temperature and decreased with unintentional oxygen incorporation. Hg probe capacitance–voltage measurements indicated N{sub D}-N{sub A} decreased with decreasing growth temperature from 10{sup 19} to 10{sup 20}/cm{sup 3} for the lowest resistivity films to ?5?×?10{sup 16}/cm{sup 3} for the highest resistivity films. In-situ ultraviolet photoelectron spectroscopy measurements additionally showed the valence band maximum moving from 1.4 to 0.8 eV below the Fermi level with decreasing growth temperature consistent with the increased resistivity and reduction in carrier concentration. These results suggest that additional reductions in ScN carrier concentrations can be achieved via continued optimization of ScN growth conditions and selection of substrate orientation and surface termination.

  17. Rare-earth transition-metal gallium chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se)

    SciTech Connect (OSTI)

    Rudyk, Brent W.; Stoyko, Stanislav S.; Oliynyk, Anton O.; Mar, Arthur, E-mail: arthur.mar@ualberta.ca

    2014-02-15T23:59:59.000Z

    Six series of quaternary rare-earth transition-metal chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se), comprising 33 compounds in total, have been prepared by reactions of the elements at 1050 °C (for the sulphides) or 900 °C (for the selenides). They adopt noncentrosymmetric hexagonal structures (ordered Ce{sub 3}Al{sub 1.67}S{sub 7}-type, space group P6{sub 3}, Z=2) with cell parameters in the ranges of a=9.5–10.2 Å and c=6.0–6.1 Å for the sulphides and a=10.0–10.5 Å and c=6.3–6.4 Å for the selenides as refined from powder X-ray diffraction data. Single-crystal structures were determined for five members of the sulphide series RE{sub 3}FeGaS{sub 7} (RE=La, Pr, Tb) and RE{sub 3}CoGaS{sub 7} (RE=La, Tb). The highly anisotropic crystal structures consist of one-dimensional chains of M-centred face-sharing octahedra and stacks of Ga-centred tetrahedra all pointing in the same direction. Magnetic measurements on the sulphides reveal paramagnetic behaviour in some cases and long-range antiferromagnetic behaviour with low Néel temperatures (15 K or lower) in others. Ga L-edge XANES spectra support the presence of highly cationic Ga tetrahedral centres with a tendency towards more covalent Ga–Ch character on proceeding from the sulphides to the selenides. Band structure calculations on La{sub 3}FeGaS{sub 7} indicate that the electronic structure is dominated by Fe 3d-based states near the Fermi level. - Graphical abstract: The series of chalcogenides RE{sub 3}MGaS{sub 7}, which form for a wide range of rare-earth and transition metals (M=Fe, Co, Ni), adopt highly anisotropic structures containing chains of M-centred octahedra and stacks of Ga-centred tetrahedra. Display Omitted - Highlights: • Six series (comprising 33 compounds) of chalcogenides RE{sub 3}MGaCh{sub 7} were prepared. • They adopt noncentrosymmetric hexagonal structures with high anisotropy. • Most compounds are paramagnetic; some show antiferromagnetic ordering. • Ga L-edge XANES confirms presence of cationic Ga species.

  18. Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating

    DOE Patents [OSTI]

    Howard, Stanley R. (Windsor, SC); Korinko, Paul S. (Aiken, SC)

    2008-05-27T23:59:59.000Z

    A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

  19. Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

    SciTech Connect (OSTI)

    Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Bong Kyu; Ahn, Chang-Geun; Kim, Sang-Hyeob [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of); Choi, Chel-Jong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-07-21T23:59:59.000Z

    We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter?

  20. Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

    SciTech Connect (OSTI)

    Gao, S.; Chen, C.; Liu, H. Y.; Lin, Y. S.; Li, S. Z.; Lu, S. H.; Wang, G. Y.; Song, C.; Zeng, F., E-mail: zengfei@mail.tsinghua.edu.cn; Pan, F., E-mail: panf@mail.tsinghua.edu.cn [Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhai, Z. [Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2014-08-11T23:59:59.000Z

    The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ?10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000?s, and fast operation speed of <100?ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.

  1. CO{sub 2} laser-based dispersion interferometer utilizing orientation-patterned gallium arsenide for plasma density measurements

    SciTech Connect (OSTI)

    Bamford, D. J.; Cummings, E. A.; Panasenko, D. [Physical Sciences Inc., 6652 Owens Drive, Pleasanton, California 94588 (United States)] [Physical Sciences Inc., 6652 Owens Drive, Pleasanton, California 94588 (United States); Fenner, D. B.; Hensley, J. M. [Physical Sciences Inc., 20 New England Business Center, Andover, Massachusetts 01810 (United States)] [Physical Sciences Inc., 20 New England Business Center, Andover, Massachusetts 01810 (United States); Boivin, R. L.; Carlstrom, T. N.; Van Zeeland, M. A. [General Atomics, P.O. Box 85608, San Diego, California 92186 (United States)] [General Atomics, P.O. Box 85608, San Diego, California 92186 (United States)

    2013-09-15T23:59:59.000Z

    A dispersion interferometer based on the second-harmonic generation of a carbon dioxide laser in orientation-patterned gallium arsenide has been developed for measuring electron density in plasmas. The interferometer includes two nonlinear optical crystals placed on opposite sides of the plasma. This instrument has been used to measure electron line densities in a pulsed radio-frequency generated argon plasma. A simple phase-extraction technique based on combining measurements from two successive pulses of the plasma has been used. The noise-equivalent line density was measured to be 1.7 × 10{sup 17} m{sup ?2} in a detection bandwidth of 950 kHz. One of the orientation-patterned crystals produced 13 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 13 W of peak power. Two crystals arranged sequentially produced 58 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 37 W of peak power.

  2. Photon self-induced spin-to-orbital conversion in a terbium-gallium-garnet crystal at high laser power

    SciTech Connect (OSTI)

    Mosca, S.; De Rosa, R.; Milano, L. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); INFN Sezione di Napoli, Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); Canuel, B.; Genin, E. [EGO, European Gravitational Observatory, Via E. Amaldi, 56021 S. Stefano a Macerata, Cascina (Italy); Karimi, E. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); Piccirillo, B.; Santamato, E. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); CNISM-Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia, Napoli (Italy); Marrucci, L. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); CNR-INFM Coherentia, Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy)

    2010-10-15T23:59:59.000Z

    In this paper, we present experimental evidence of a third-order nonlinear optical process, self-induced spin-to-orbital conversion (SISTOC) of the photon angular momentum. This effect is the physical mechanism at the origin of the depolarization of very intense laser beams propagating in isotropic materials. The SISTOC process, like self-focusing, is triggered by laser heating leading to a radial temperature gradient in the medium. In this work we tested the occurrence of SISTOC in a terbium-gallium-garnet rod for an impinging laser power of about 100 W. To study the SISTOC process we used different techniques: polarization analysis, interferometry, and tomography of the photon orbital angular momentum. Our results confirm, in particular, that the apparent depolarization of the beam is due to the occurrence of maximal entanglement between the spin and orbital angular momentum of the photons undergoing the SISTOC process. This explanation of the true nature of the depolarization mechanism could be of some help in finding novel methods to reduce or to compensate for this usually unwanted depolarization effect in all cases where very high laser power and good beam quality are required.

  3. Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

    SciTech Connect (OSTI)

    Sun, J.; Wu, A.M.; Xu, N.; Ying, Z.F.; Shen, X.K.; Dong, Z.B.; Wu, J.D.; Shi, L.Q. [State Key Laboratory for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Institute of Modern Physics, Fudan University, Shanghai 200433 (China)

    2005-11-15T23:59:59.000Z

    Using reactive pulsed laser deposition assisted by electron cyclotron resonance (ECR) plasma, we have synthesized GaN thin films from a polycrystalline GaAs target at low temperatures. This was achieved by ablating the GaAs target in the reactive environment of a nitrogen plasma generated from ECR microwave discharge in pure nitrogen gas and depositing the films with concurrent bombardment by the low-energy nitrogen plasma stream. High-energy ion backscattering spectroscopy analysis shows that the synthesized films are gallium rich. Characterizations by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy confirm the presence of GaN bonds in the films. The recorded absorption spectrum also reveals GaN stretching mode characteristic of the hexagonal GaN phase. The synthesized GaN films are transparent in the visible region and have a band gap of 3.38 eV. Optical emission from the plume during film deposition reveals that the plume created by pulsed laser ablation of the GaAs target consists mainly of monoatomic atoms and ions of gallium and arsenic. Mechanisms responsible for the formation of GaN molecules and the growth of GaN films are also discussed.

  4. Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells

    SciTech Connect (OSTI)

    Untila, G. G., E-mail: GUntila@mics.msu.su; Kost, T. N.; Chebotareva, A. B.; Timofeyev, M. A. [Moscow State University, Skobel'tsyn Institute of Nuclear Physics (Russian Federation)

    2013-03-15T23:59:59.000Z

    Fluorine-doped indium oxide (IFO) films are deposited onto (pp{sup +})Si and (n{sup +}nn{sup +})Si structures made of single-crystal silicon by ultrasonic spray pyrolysis. The effect of the IFO deposition time and annealing time in an argon atmosphere with methanol vapor on the IFO chemical composition, the photovoltage and fill factor of the Illumination-U{sub oc} curves of IFO/(pp{sup +})Si structures, and the sheet resistance of IFO/(n{sup +}nn{sup +})Si structures, correlating with the IFO/(n{sup +})Si contact resistance, is studied. The obtained features are explained by modification of the properties of the SiO{sub x} transition layer at the IFO/Si interface during deposition and annealing. Analysis of the results made it possible to optimize the fabrication conditions of solar cells based on IFO/(pp{sup +})Si heterostructures and to increase their efficiency from 17% to a record 17.8%.

  5. Rare-earth metal gallium silicides via the gallium self-flux method. Synthesis, crystal structures, and magnetic properties of RE(Ga1–xSix)? (RE=Y, La–Nd, Sm, Gd–Yb, Lu)

    SciTech Connect (OSTI)

    Darone, Gregory M.; Hmiel, Benjamin; Zhang, Jiliang [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States); Saha, Shanta; Kirshenbaum, Kevin; Greene, Richard; Paglione, Johnpierre [Department of Physics, University of Maryland, College Park, Maryland 20742 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)

    2013-05-01T23:59:59.000Z

    Fifteen ternary rare-earth metal gallium silicides have been synthesized using molten Ga as a molten flux. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with three different structures—the early to mid-late rare-earth metals RE=La–Nd, Sm, Gd–Ho, Yb and Y form compounds with empirical formulae RE(GaxSi1–x)? (0.38?x?0.63), which crystallize with the tetragonal ?-ThSi? structure type (space group I4?/amd, No. 141; Pearson symbol tI12). The compounds of the late rare-earth crystallize with the orthorhombic ?-GdSi? structure type (space group Imma, No. 74; Pearson symbol oI12), with refined empirical formula REGaxSi2–x–y (RE=Ho, Er, Tm; 0.33?x?0.40, 0.10?y?0.18). LuGa?.?????Si?.????? crystallizes with the orthorhombic YbMn?.??Si?.?? structure type (space group Cmcm, No. 63; Pearson symbol oC24). Structural trends are reviewed and analyzed; the magnetic susceptibilities of the grown single-crystals are presented. - Graphical abstract: This article details the exploration of the RE–Ga–Si ternary system with the aim to systematically investigate the structural “boundaries” between the ?-ThSi? and ?-GdSi?-type structures, and studies of the magnetic properties of the newly synthesized single-crystalline materials. Highlights: • Light rare-earth gallium silicides crystallize in ?-ThSi? structure type. • Heavy rare-earth gallium silicides crystallize in ?-GdSi? structure type. • LuGaSi crystallizes in a defect variant of the YbMn?.??Si?.?? structure type.

  6. Long-Term Performance Data and Analysis of CIS/CIGS Modules Deployed Outdoors

    SciTech Connect (OSTI)

    del Cueto, J.A.; Rummel, S.; Kroposki, B.; Anderberg, A.

    2008-11-01T23:59:59.000Z

    The long-term performance data of copper indium diselenide (CIS) and gallium-alloyed CIS (CIGS) photovoltaic (PV) modules are investigated to assess the reliability of this technology.

  7. MOCVD growth of In GaP-based heterostructures for light emitting devices

    E-Print Network [OSTI]

    McGill, Lisa Megan, 1975-

    2004-01-01T23:59:59.000Z

    In this work, we examine fundamental materials processes in the growth of indium gallium phosphide (InGaP) via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration ...

  8. 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 2749 www.advmat.de

    E-Print Network [OSTI]

    Prentiss, Mara

    . Whitesides* Stretchable Microfluidic Radiofrequency Antennas This paper describes a new method for fabricating stretchable radiofrequency antennas. The antennas consist of liquid metal (eutectic gallium indium be repeatedly stretched, while retaining a high efficiency (> 95 %) in radiation. "Stretchability

  9. Long-Term Performance Data and Analysis of CIS/CIGS Modules Deployed Outdoors (Presentation)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Kroposki, B.; Rummel, S.; Anderberg, A.

    2008-08-10T23:59:59.000Z

    The long-term performance data of copper indium diselenide (CIS) and gallium-alloyed CIS (CIGS) photovoltaic (PV) modules are investigated to assess the reliability of this technology.

  10. Test vehicle detector characterization system for the Boeing YAL-1 airborne laser

    E-Print Network [OSTI]

    Steininger-Holmes, Jason Thomas

    2008-01-01T23:59:59.000Z

    The test vehicle detector characterization system provides a convenient and efficient tool for rapidly evaluating the optical sensitivity of the GAP6012, GAP100, GAP300, and GAP1000 indium gallium arsenide detectors used ...

  11. Veeco

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to design indium gallium nitride (InGaN) MOCVD growth systems. The actual experimental GaN non-uniformity is about four times greater than predicted because the model does not...

  12. Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008

    SciTech Connect (OSTI)

    Olsen, L. C.

    2010-03-01T23:59:59.000Z

    This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

  13. Gallium interactions with Zircaloy

    E-Print Network [OSTI]

    West, Michael Keith

    1998-01-01T23:59:59.000Z

    -nitride insulated cylinder wrapped with a tantalum oven wire and provides for evaporation of solid source materials. For an appropriate combination of gas pressure, filament current, and anode voltage, a plasma is formed in the hollow cathode region of the source... of the goniometer motor above 100 'C. In addition, braided copper straps were wrapped around the goniometer motors and connected to the cold plates in the target chamber. Zirc-4 Target Heater Wire Current = 2. 5 A To Current Integrator Inner Cup Bias = -200...

  14. Gallium interactions with Zircaloy 

    E-Print Network [OSTI]

    West, Michael Keith

    1998-01-01T23:59:59.000Z

    with Rutherford backscattering and SIMS techniques. Results indicate that the Zirc-4 is little affected up to a fluency of [] Ga ions/[]. After implantation of [] Ga ions/[], sub-grain features on the order of 2 gm were observed which may be due to intermetallic...

  15. CX-010895: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

  16. innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells

    E-Print Network [OSTI]

    innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells Before 1984, many a solar cell can convert into electricity. Olson thought the focus should change to finding materials-winning gallium indium phosphide/gallium arsenide tandem solar cell, which had achieved record efficiencies, con

  17. Anomalous nonlinear photoresponse in a InGaNGaN heterostructure J. Zeller,* W. Rudolph, and M. Sheik-Bahae

    E-Print Network [OSTI]

    Sheik-Bahae, Mansoor

    deposition on a c-plane sapphire substrate. A 20 nm thick low-temperature grown GaN buffer layer between the sapphire substrate and the n-GaN layer as well as linear photoconductivity in a Gallium nitride/ Indium-Gallium nitride GaN/InGaN heterostructure

  18. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    SciTech Connect (OSTI)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07T23:59:59.000Z

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  19. Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

    SciTech Connect (OSTI)

    Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Cho, Yong-Hoon, E-mail: yhc@kaist.ac.kr [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)] [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kwon, Soon-Yong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of) [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Jin Kim, Hee; Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Si Dang, Le [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)] [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2013-11-25T23:59:59.000Z

    Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

  20. Thin film solar cell configuration and fabrication method

    DOE Patents [OSTI]

    Menezes, Shalini

    2009-07-14T23:59:59.000Z

    A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

  1. 62 Journal of Student Research in Environmental Science at Appalachian Site Suitability Analysis for a Solar Farm

    E-Print Network [OSTI]

    Thaxton, Christopher S.

    ]. The semiconductor materials typically used are crystalline-silicone, containing monocrystalline or polycrystalline cells, or thin-film, containing materials including CdTe and copper indium gal- lium selenide, solar modules [2]. Although thin- film solar panels are typically less expensive than c-Si solar panels

  2. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

    SciTech Connect (OSTI)

    Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues [Normandie Université-Université de Rouen-ENSICAEN-UMR 6508 LaMIPS, Laboratoire commun CNRS-NXP-PRESTO-ENSICAEN-UCBN 2, rue de la Girafe BP 5120, F-14079 Caen (France)

    2014-09-14T23:59:59.000Z

    Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.

  3. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-04-21T23:59:59.000Z

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

  4. Enhancement of conduction noise absorption by hybrid absorbers composed of indium-tin-oxide thin film and magnetic composite sheet on a microstrip line

    SciTech Connect (OSTI)

    Kim, Sun-Hong; Kim, Sung-Soo, E-mail: sskim@chungbuk.ac.kr [Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-05T23:59:59.000Z

    In order to develop wide-band noise absorbers with a focused design for low frequency performance, this study investigates hybrid absorbers that are composed of conductive indium-tin-oxide (ITO) thin film and magnetic composite sheets. The ITO films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ?10{sup ?4} ? m. Rubber composites with flaky Fe-Si-Al particles are used as the magnetic sheet with a high permeability and high permittivity. For the ITO film with a low surface resistance and covered by the magnetic sheet, approximately 90% power absorption can be obtained at 1?GHz, which is significantly higher than that of the original magnetic sheet or ITO film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the ITO film through increased electric field strength bounded by the upper magnetic composite sheet. However, for the reverse layering sequence of the ITO film, the electric field experienced by ITO film is very weak due to the electromagnetic shielding by the under layer of magnetic sheet, which does not result in enhanced power absorption.

  5. Final Report

    SciTech Connect (OSTI)

    Dr. Meng Tao

    2010-12-22T23:59:59.000Z

    The objective of this DOE SAI project is to demonstrate the feasibility of electrodeposited and solution-doped transparent conducting oxides (TCOs) such as zinc oxide with resistivity in the mid-10{sup -4} {Omega}-cm range. The target application is an 'on-top' TCO which can be deposited on semiconductors in thin-film and future solar cells including amorphous silicon, copper indium gallium selenide and emerging solar cells. There is no solution-prepared on-top TCO currently used in commercial solar cells. This project, if successful, will fill this gap. Our technical objectives include electrodeposited TCOs with (1) resistivity in the mid-10{sup -4} {Omega}-cm range, (2) post-deposition annealing below 300 C and (3) no-vacuum processing or low-vacuum processing. All the three research objectives listed above have been accomplished in the 14-month period from July 1, 2009 through September 30, 2010. The most noticeable accomplishments of this project are (1) identification of a terawatt-scale dopant for zinc oxide, i.e. yttrium, whose known reserve is enough for 60 peak terawatts of thin-film solar cells; (2) demonstration of a record-low resistivity, 6.3 x 10{sup -5} {Omega}-cm, in solution-deposited zinc oxide with an abundant dopant; and (3) the record-low resistivity was accomplished with a maximum process temperature of 300 C and without vacuum annealing. Industrial applications of the new yttrium-doped zinc oxide are being pursued, including (1) green deposition of yttrium-doped zinc oxide to reduce water consumption during deposition and (2) search for an industrial partner to develop an electrochemical tool for large-area uniform deposition of yttrium-doped zinc oxide.

  6. Measurement of the solar neutrino capture rate with gallium metal. III. Results for the 2002-2007 data-taking period

    SciTech Connect (OSTI)

    Abdurashitov, J. N.; Gavrin, V. N.; Gorbachev, V. V.; Gurkina, P. P.; Ibragimova, T. V.; Kalikhov, A. V.; Khairnasov, N. G.; Knodel, T. V.; Mirmov, I. N.; Shikhin, A. A.; Veretenkin, E. P.; Yants, V. E.; Zatsepin, G. T.; Bowles, T. J.; Elliott, S. R.; Teasdale, W. A.; Nico, J. S.; Cleveland, B. T.; Wilkerson, J. F. [Institute for Nuclear Research, Russian Academy of Sciences, RU-117312 Moscow (Russian Federation); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); National Institute of Standards and Technology, Stop 8461, Gaithersburg, Maryland 20899 (United States); University of Washington, Seattle, Washington 98195 (United States)

    2009-07-15T23:59:59.000Z

    The Russian-American experiment SAGE began to measure the solar neutrino capture rate with a target of gallium metal in December 1989. Measurements have continued with only a few brief interruptions since that time. In this article we present the experimental improvements in SAGE since its last published data summary in December 2001. Assuming the solar neutrino production rate was constant during the period of data collection, combined analysis of 168 extractions through December 2007 gives a capture rate of solar neutrinos with energy more than 233 keV of 65.4{sub -3.0}{sup +3.1} (stat) {sub -2.8}{sup +2.6} (syst) SNU. The weighted average of the results of all three Ga solar neutrino experiments, SAGE, Gallex, and GNO, is now 66.1{+-}3.1 SNU, where statistical and systematic uncertainties have been combined in quadrature. During the recent period of data collection a new test of SAGE was made with a reactor-produced {sup 37}Ar neutrino source. The ratio of observed to calculated rates in this experiment, combined with the measured rates in the three prior {sup 51}Cr neutrino-source experiments with Ga, is 0.87{+-}0.05. A probable explanation for this low result is that the cross section for neutrino capture by the two lowest-lying excited states in {sup 71}Ge has been overestimated. If we assume these cross sections are zero, then the standard solar model including neutrino oscillations predicts a total capture rate in Ga in the range of 63 SNU to 66 SNU with an uncertainty of about 4%, in good agreement with experiment. We derive the current value of the neutrino flux produced in the Sun by the proton-proton fusion reaction to be {phi}{sub pp}{sup {center_dot}}=(6.0{+-}0.8)x10{sup 10}/(cm{sup 2} s), which agrees well with the pp flux predicted by the standard solar model. Finally, we make several tests and show that the data are consistent with the assumption that the solar neutrino production rate is constant in time.

  7. Measurement of the solar neutrino capture rate with gallium metal. III: Results for the 2002--2007 data-taking period

    E-Print Network [OSTI]

    SAGE Collaboration; J. N. Abdurashitov; V. N. Gavrin; V. V. Gorbachev; P. P. Gurkina; T. V. Ibragimova; A. V. Kalikhov; N. G. Khairnasov; T. V. Knodel; I. N. Mirmov; A. A. Shikhin; E. P. Veretenkin; V. E. Yants; G. T. Zatsepin; T. J. Bowles; S. R. Elliott; W. A. Teasdale; J. S. Nico; B. T. Cleveland; J. F. Wilkerson

    2009-08-10T23:59:59.000Z

    The Russian-American experiment SAGE began to measure the solar neutrino capture rate with a target of gallium metal in Dec. 1989. Measurements have continued with only a few brief interruptions since that time. We give here the experimental improvements in SAGE since its last published data summary in Dec. 2001. Assuming the solar neutrino production rate was constant during the period of data collection, combined analysis of 168 extractions through Dec. 2007 gives a capture rate of solar neutrinos with energy more than 233 keV of 65.4 (+3.1)(-3.0) (stat) (+2.6)(-2.8) (syst) SNU. The weighted average of the results of all three Ga solar neutrino experiments, SAGE, Gallex, and GNO, is now 66.1 +/- 3.1 SNU, where statistical and systematic uncertainties have been combined in quadrature. During the recent period of data collection a new test of SAGE was made with a reactor-produced 37Ar neutrino source. The ratio of observed to calculated rates in this experiment, combined with the measured rates in the three prior 51Cr neutrino-source experiments with Ga, is 0.87 +/- 0.05. A probable explanation for this low result is that the cross section for neutrino capture by the two lowest-lying excited states in 71Ge has been overestimated. If we assume these cross sections are zero, then the standard solar model including neutrino oscillations predicts a total capture rate in Ga in the range of 63-66 SNU with an uncertainty of about 4%, in good agreement with experiment. We derive the current value of the neutrino flux produced in the Sun by the proton-proton fusion reaction to be (6.0 +/- 0.8) x 10^(10)/(cm^2 s), which agrees well with the pp flux predicted by the standard solar model. Finally, we show that the data are consistent with the assumption that the solar neutrino production rate is constant in time.

  8. Hierarchical hollow microsphere and flower-like indium oxide: Controllable synthesis and application as H{sub 2}S cataluminescence sensing materials

    SciTech Connect (OSTI)

    Cai, Pingyang, E-mail: cpyxx@163.com [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Bai, Wei, E-mail: weibaiscu@gmail.com [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Zhang, Lichun, E-mail: lichun0203@yahoo.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Song, Hongjie, E-mail: aurora811005@yahoo.com.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Yingying, E-mail: suyinging@scu.edu.cn [Analytical and Testing Center, Sichuan University, Chengdu, Sichuan 610064 (China)] [Analytical and Testing Center, Sichuan University, Chengdu, Sichuan 610064 (China); Lv, Yi, E-mail: lvy@scu.edu.cn [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)] [Key Laboratory of Green Chemistry and Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu, Sichuan 610064 (China)

    2012-09-15T23:59:59.000Z

    Graphical abstract: Hierarchical hollow microsphere and flower-like In{sub 2}O{sub 3} were controllable fabricated through a novel and simple hydrothermal process, and the former showed superior cataluminescence sensing performance to H{sub 2}S. Highlights: ? In{sub 2}O{sub 3} hierarchical hollow sphere were prepared via a hydrothermal route. ? The growth process of In{sub 2}O{sub 3} hierarchical hollow sphere has been investigated. ? The sensor based on prepared In{sub 2}O{sub 3} shows good sensing performance to H{sub 2}S. -- Abstract: In the present work, In{sub 2}O{sub 3} hierarchical hollow microsphere and flower-like microstructure were achieved controllably by a hydrothermal process in the sodium dodecyl sulfate (SDS)-N,N-dimethyl-formamide (DMF) system. XRD, SEM, HRTEM and N{sub 2} adsorption measurements were used to characterize the as-prepared indium oxide materials and the possible mechanism for the microstructures formation was briefly discussed. The cataluminescence gas sensor based on the as-prepared In{sub 2}O{sub 3} was utilized to detect H{sub 2}S concentrations in flowing air. Comparative gas sensing results revealed that the sensor based on hierarchical hollow microsphere exhibited much higher sensing sensitivity in detecting H{sub 2}S gas than the sensor based on flower-like microstructure. The present gas sensor had a fast response time of 5 s and a recovery time of less than 25 s, furthermore, the cataluminescence intensity vs. H{sub 2}S concentration was linear in range of 2–20 ?g mL{sup ?1} with a detection limit of 0.5 ?g mL{sup ?1}. The present highly sensitive, fast-responding, and low-cost In{sub 2}O{sub 3}-based gas sensor for H{sub 2}S would have many practical applications.

  9. Indium flux-growth of Eu{sub 2}AuGe{sub 3} : a new germanide with an AlB{sub 2} superstructure.

    SciTech Connect (OSTI)

    Sebastian, C. P.; Malliakas, C. D.; Chondroudi, M.; Schellenberg, I.; Rayaprol, S.; Hoffmann, R.-D.; Pottgen, R.; Kanatzidis, M. G. (Materials Science Division); (Northwestern Univ.); (Westfalische Wilhelms-Univ. Munster); (UGC-DAE Consortium for Scientific Research)

    2010-01-01T23:59:59.000Z

    The germanide Eu{sub 2}AuGe{sub 3} was obtained as large single crystals in high yield from a reaction of the elements in liquid indium. At room temperature Eu{sub 2}AuGe{sub 3} crystallizes with the Ca{sub 2}AgSi{sub 3} type, space group Fmmm, an ordered variant of the AlB{sub 2} type: a = 857.7(4), b = 1485.5(10), c = 900.2(4) pm. The gold and germanium atoms build up slightly distorted graphite-like layers which consist of Ge{sub 6} and Au{sub 2}Ge{sub 4} hexagons, leading to two different hexagonal-prismatic coordination environments for the europium atoms. Magnetic susceptibility data showed Curie?Weiss law behavior above 50 K and antiferromagnetic ordering at 11 K. The experimentally measured magnetic moment indicates divalent europium. The compound exhibits a distinct magnetic anisotropy based on single crystal measurements and at 5 K it shows a metamagnetic transition at 10 kOe. Electrical conductivity measurements show metallic behavior. The structural transition at 130 K observed in the single crystal data was very well supported by the conductivity measurements. {sup 151}Eu Moessbauer spectroscopic data show an isomer shift of ?11.24 mm/s at 77 K, supporting the divalent character of europium. In the magnetically ordered regime one observes superposition of two signals with hyperfine fields of 26.0 (89%) and 3.5 (11%) T, respectively, indicating differently ordered domains.

  10. Sandia National Laboratories: gallium nitride

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Systems Dept.) recently published the article "Band offsets of La2O3 on (0001) GaN grown by reactive molecular-beam epitaxy" in Applied Physics Letters outlining research...

  11. Chemical deposition of thin films of lead selenide

    E-Print Network [OSTI]

    Skovlin, Dean Oliver

    1956-01-01T23:59:59.000Z

    LIBRARY A A IN COLLEGE OF TEXAS CHEMICAL DEPOSITIOH OF THIN FILMS OF LEAD SELEHIDE A THESIS DEAN OLIVER SEOVLIH Submitted to the Graduate School of the Agricultural and Mechanical College of Texas in partial fulfillment of the requirements..., the author is indebted for her encouragenent and understanding which wade this study possible. iv I INTRODUCTIOW . I I LITERATURE SURVEY. I II EXP ERIMEHTAL Page 1. Choice of Reagents. 2. The Reaction of DMS and Lead Ritrate in Aqueous Solution. 3...

  12. antimony selenides: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    used as catalyst in the manufacture of polyester fabrics and polyethylene terephthalate (PET) plastics and is used as a synergist to flame retardants in textiles, plastics, paints,...

  13. americium selenides: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    determination of americium241 in soil by means of chemical separations and alpha spectrometry. It is designed to analyze up to ten grams of soil or other sample matrices that...

  14. Thermoelectric materials ternary penta telluride and selenide compounds

    DOE Patents [OSTI]

    Sharp, Jeffrey W. (Richardson, TX)

    2001-01-01T23:59:59.000Z

    Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

  15. Thermoelectric materials: ternary penta telluride and selenide compounds

    DOE Patents [OSTI]

    Sharp, Jeffrey W. (Richardson, TX)

    2002-06-04T23:59:59.000Z

    Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

  16. Reaction chemistry and ligand exchange at cadmium selenide nanocrystal surfaces

    E-Print Network [OSTI]

    Owen, Jonathan

    2008-01-01T23:59:59.000Z

    E. ; Colvin, V. L. ; Alivisatos, A.P. J. Phys. Chem. 1994,Galli, G. ; Manna, L. ; Alivisatos, A. P. Nano Lett. 2004,L. W. ; Cingolani, R. ; Alivisatos, A. P. J. Phys. Chem. B

  17. arsenic selenides: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OF SOIL AND PLANT ON ARSENIC ACCUMULATION BY ARSENIC HYPERACCUMULATOR Pteris vittata L Environmental Management and Restoration Websites Summary: EFFECTS OF SOIL AND PLANT ON...

  18. Evaluating the potential for high thermoelectric efficiency of silver selenide

    E-Print Network [OSTI]

    Martin, Alain

    for cooling applications as well as up to 600 K for waste heat recovery. 1 Introduction Thermoelectric application of an electric current, show promise as efficient harvesters of waste heat from industrial

  19. Crystal structure and chemistry of a complex indium phosphate framework material, (ethylenediammonium)In{sub 3}P{sub 3}O{sub 12}(OH){sub 2}

    SciTech Connect (OSTI)

    Broach, Robert W., E-mail: robert.broach@uop.com [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); Bedard, Robert L. [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States)] [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); King, Lisa M., E-mail: lisa.king@uop.com [UOP, a Honeywell Co., 50 E. Algonquin Rd., Des Plaines, IL 60017 (United States); Pluth, Joseph J., E-mail: pluth@cars.uchicago.edu [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States); The University of Chicago, The Materials Research Science and Engineering Center, Chicago, IL 60637 (United States); Smith, Joseph V. [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States)] [The University of Chicago, Department of the Geophysical Sciences, Consortium for Advanced Radiation Sources, Chicago, IL 60637 (United States); Kirchner, Richard M., E-mail: richard.kirchner@manhattan.edu [Manhattan College, Chemistry Department, Bronx, NY 10471 (United States)

    2012-12-15T23:59:59.000Z

    The chemistry and structure of a novel indium phosphate material (RIPS-4), (H{sub 3}NCH{sub 2}CH{sub 2}NH{sub 3})In{sub 3}-P{sub 3}O{sub 12}(OH){sub 2}, are described. RIPS-4 was synthesized using ethylene diamine as a structure-directing organic agent. The X-ray crystal structure was determined from a 12 Multiplication-Sign 12 Multiplication-Sign 42 {mu}m{sup 3} crystal in space group C2/m with a=18.662(4) A, b=6.600(2) A, c=12.573(3) A and {beta}=120.92(1) Degree-Sign . The structure consists of a complex edge- and vertex-shared open framework of InO{sub 6} octahedra and PO{sub 4} tetrahedra enclosing cavities occupied by ethylenediamonium ions. One set of octahedra share opposing edges to form chains along the b-axis matching the structural unit in rutile (TiO{sub 2}). This rutile edge-shared chain has its projecting oxygen atoms shared with the vertexes of either a PO{sub 4} tetrahedron or a second type of InO{sub 6} octahedron. The O atoms are 2-connected, each to one In and one P, except for two protonated O atoms (hydroxyl groups) that connect to two and three In atoms, giving three- and four-coordinate O atoms, respectively. - Graphical abstract: The unique topology contains an unusual 4-connected oxygen atom (O{sub 1}) in a complex edge- and vertex-shared open framework of InO{sub 6} octahedra (blue) and PO{sub 4} tetrahedra (yellow) that encloses cavities occupied by ethylenediammonium ions. Highlights: Black-Right-Pointing-Pointer The structure has a unique open-framework topology. Black-Right-Pointing-Pointer The framework contains an unusual 4-connected oxygen atom. Black-Right-Pointing-Pointer Hydrogen bonds hold the ethylenediammonium ions in the cavities.

  20. Realization of indium liquidus point

    E-Print Network [OSTI]

    Feng, En-Ling

    1984-01-01T23:59:59.000Z

    and Glass Rod, and Thermi. stor Reading vs Time (yZ) 43 ThRLN 2 PRT OUTPUT VS. HEhTlNG VOLThGR Voltage on hluainua PRT Output (aV) 22 g 28 g 28 N 29 N 32 M 34 N 13. 600 14. 391 14 ~ 395 14. 393 14. 414 3. Final Results The cell... FOR CONSTANT CURRENT SUPPLT TABLE B-I DATA fOR CONSTANT CURRENT WITHIN HOURS (4/28/83) Tias (hr ~ ( aiu ) Output Voltsgs (aV) 35. 02507 35. 02505 35. 02496 35. 02498 TABLE B-II DATA FOR CONSTANT CURRENT WITHIN HOURS (6/22/83) Tias (hr. : ain. ) Output...

  1. Indium Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, search OpenEIHesperia,IDGWPIndiantown, Florida: Energy Resources Jump

  2. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from a NewCuneo Matthew1, 20121+Mechanical Behavior of

  3. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from a NewCuneo Matthew1, 20121+Mechanical Behavior

  4. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from a NewCuneo Matthew1, 20121+Mechanical

  5. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from a NewCuneo Matthew1, 20121+MechanicalMechanical

  6. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighand Retrievals from a NewCuneo Matthew1,

  7. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes |IsLove Your Home andDisposition |MaterialsMatt10Laser,Measuring

  8. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes |IsLove Your Home andDisposition

  9. High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Li, X.; Wanlass, M.W.; Gessert, T.A.; Emery, K.A.; Coutts, T.J.

    1989-05-01T23:59:59.000Z

    Solar cells based on dc magnetron sputtered indium tin oxide onto epitaxially grown films of p-InP have been fabricated and analyzed. The best cells had a global efficiency of 18.4% and an air mass zero (AMO) efficiency of 16.0%. The principal fabrication variable considered was the constituency of the sputtering gas and both argon/hydrogen and argon/oxygen mixtures have been used. The former cells have the higher efficiencies, are apparently stable, and exhibit almost ideal junction characteristics. The latter cells are relatively unstable and exhibit much higher ideality factors and reverse saturation current densities. The temperature dependence of the reverse saturation current indicates totally different charge transfer mechanisms in the two cases.

  10. PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14:2543

    E-Print Network [OSTI]

    Anderson, Timothy J.

    PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14 Solar Energy, Inc., 5575 S. Houghton Rd, Tucson, AZ 85747, USA 7 Energy Photovoltaics, Inc., 276 Bakers transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers

  11. Sandia Energy - Light Creation Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ZnO, will be important. AlGaInN Materials LEDs based on gallium nitride (GaN) and ternary alloys with indium (InGaN) and aluminum (AlGaN) as well as quaternary alloys (AlGaInN) can...

  12. 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1wileyonlinelibrary.com COMMUNICATION

    E-Print Network [OSTI]

    .88% Efficient Tin Sulfide Solar Cells using Congruent Thermal Evaporation Vera Steinmann,* R. Jaramillo, Katy reported PCE for TE SnS solar cells is 1.6%, with a small device area of 0.01 cm2.[10] The cur- rent Sn-per-year (GW/yr) levels,[1] while PV cells based on copper (indium, gallium) (diselenide, disulfide) (CIGS

  13. Effects of Series Resistance and Inductance on Solar Cell Admittance Measurements(a)

    E-Print Network [OSTI]

    Scofield, John H.

    on a variety of 0.43 cm2 area, copper indium gallium diselenide (CIGS) polycrystalline thin film solar cellsEffects of Series Resistance and Inductance on Solar Cell Admittance Measurements(a) John H Energy Materials and Solar Cells on April 17, 1994) Admittance measurements have been performed

  14. When you think of the film industry, what comes to mind? Entertainment. In this issue you will discover how films not only bring us the latest adventures but also are being sculptured at

    E-Print Network [OSTI]

    Demirel, Melik C.

    rooftop market. Solyndra uses a copper-indium-gallium-diselenide (CIGS) absorber layer in its solar cell to create revolutionary optics, semiconductors, medical devices, and solar cells. Spring 2009 In This Issue information, visit: www.jbg3.net Alumni Spotlight Phil Kraus (B.S. '93) is the director of technology at solar-cell

  15. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect (OSTI)

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01T23:59:59.000Z

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  16. A compact physical model for morphology induced intrinsic degradation of organic bulk heterojunction solar cell

    E-Print Network [OSTI]

    Alam, Muhammad A.

    for an intrinsic degradation concern for bulk heterojunction type organic photovoltaic (BH-OPV) cells that involveA compact physical model for morphology induced intrinsic degradation of organic bulk-induced degradation in Si-based cell (Staebler-Wronski effect), Cu diffusion in thin film (copper indium gallium

  17. CX-002541: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Emerging Renewables Industries: Copper, Indium, Gallium, Selenium (CIGS) Linear Source Thermal DepositionCX(s) Applied: B2.2, B5.1Date: 05/19/2010Location(s): St. Paul, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  18. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23T23:59:59.000Z

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  19. Layer-By-Layer Self-Assembly of CIGS Nanoparticles and Polymers for All-Solution Processable Low-Cost, High-Efficiency Solar Cells

    E-Print Network [OSTI]

    Zhou, Yaoqi

    -Cost, High-Efficiency Solar Cells Tung Ho1 , Robert Vittoe3 , Namratha Kakumanu2 , Sudhir Shrestha2-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202 Thin film solar cells made from copper indium gallium thereby affecting solar cell efficiency. This research aims to study various polymer materials to replace

  20. CRITICAL MINERALS AND EMERGING ENERGY TECHNOLOGIES Statement of

    E-Print Network [OSTI]

    quantities. The most prominent examples are gallium, indium and tellurium in photovoltaic solar cells in Science and Technology. Finally, I briefly describe the activities of a panel on which I serve now, organized under the auspices of the American Physical Society. This panel's work focuses on critical

  1. Metal articles having ultrafine particles dispersed therein

    SciTech Connect (OSTI)

    Alexander, G.B.; Nadkarni, R.A.

    1992-07-28T23:59:59.000Z

    This patent describes a metal article of manufacture. It comprises: a metal selected from the group consisting of copper, silver, gold, lead, tin, nickel, zinc, cobalt, antimony, bismuth, iron, cadmium, chromium, germanium, gallium, selenium, tellurium, mercury, tungsten arsenic, manganese, iridium, indium, ruthenium, rhenium, rhodium, molybdenum, palladium, osmium and platinum; and a plurality of ultrafine particles.

  2. Sandia National Laboratories: Light Creation Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for example ZnO, will be important. AlGaInN Materials LEDs based on gallium nitride (GaN) and ternary alloys with indium (InGaN) and aluminum (AlGaN) as well as quaternary...

  3. NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells.

    E-Print Network [OSTI]

    NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells indium gallium diselenide (CIGS) solar cell is zinc oxide (ZnO). The problem is that unprotected Zn is a lifetime-limiting problem that is currently addressed solely through encapsulation. Fundamentally improving

  4. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    SciTech Connect (OSTI)

    Chen, Dazheng; Zhang, Chunfu, E-mail: cfzhang@xidian.edu.cn; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue, E-mail: yhao@xidian.edu.cn [State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South Taibai Road, Xi'an 710071 (China)

    2014-06-16T23:59:59.000Z

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150?°C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100?°C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  5. D e f e c t a c t i v a t e d i n f r a r e d m u lt i p h n o n e x c i t a t i o n i n i r n -d o p e d s e m i-insulating indium phosphide

    E-Print Network [OSTI]

    Choi, Woo-Young

    D e f e c t a c t i v a t e d i n f r a r e d m u lt i p h £ n o n e x c i t a t i o n i n i r £ n - d o p e d s e m i- insulating indium phosphide Lung-Han Peng,a) Tom Broekaert, Woo Young Chd od eu m - Teller distortion eHems is observed in Fe-doped settHung nam - I nP in the spectral range

  6. Self- and zinc diffusion in gallium antimonide

    E-Print Network [OSTI]

    Nicols, Samuel Piers

    2002-01-01T23:59:59.000Z

    5, 265 (1957). S. Glasstone, K . Laidler, H . Eyring, Thequantity D . Henry Eyring [Glasstone, Eyring (1941)] was the

  7. Superconductive silicon nanowires using gallium beam lithography.

    SciTech Connect (OSTI)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01T23:59:59.000Z

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  8. Electronic properties of gallium nitride nanowires

    E-Print Network [OSTI]

    Yoon, Joonah

    2008-01-01T23:59:59.000Z

    This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

  9. Efficient wireless charging with gallium nitride FETs

    E-Print Network [OSTI]

    Yeh, Theresa (Theresa I.)

    2014-01-01T23:59:59.000Z

    Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of ...

  10. Interactions of gallium with zircaloy cladding

    E-Print Network [OSTI]

    Mitchell, Lee Josey

    1999-01-01T23:59:59.000Z

    like to thank Dr. Ron R. Hart, my advisor, for his help and direction through out the project. I would like to acknowledge J. Shipp for his help during the RBS analysis. I would also like to thank Dr. R. Guillemette for his help with the Electron... CHAPTER I INTRODUCTION The accepted options for the disposition of weapons-grade plutonium (WGPu) are immobilization or conversion to a mixed-oxide (MOX) reactor fuel. There are two benefits of conversion, one, the plutonium can't be converted back...

  11. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect (OSTI)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul, E-mail: jpmaria@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Biegalski, Michael D.; Christen, Hans M. [Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2014-02-14T23:59:59.000Z

    Smooth, commensurate alloys of ?111?-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  12. Development of gallium nitride power transistors

    E-Print Network [OSTI]

    Piedra, Daniel, M. Eng. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power ...

  13. Linearly polarized remote-edge luminescence in GaSe nanoslabs

    E-Print Network [OSTI]

    Tang, Yanhao; Mandal, Krishna C; McGuire, John A; Lai, Chih-Wei

    2015-01-01T23:59:59.000Z

    We report highly linearly polarized remote luminescence that emerges at the cleaved edges of nanoscale gallium selenide slabs tens of micrometers away from the optical excitation spot. The remote-edge luminescence (REL) measured in the reflection geometry has a degree of linear polarization above 0.90, with polarization orientation pointing toward the photoexcitation spot. The REL is dominated by an index-guided optical mode that is linearly polarized along the crystalline $c$-axis. This luminescence is from out-of-plane dipoles that are converted from in-plane dipoles through a spin-flip process at the excitation spot.

  14. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany); Mika, A.; S?k, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)

    2014-02-24T23:59:59.000Z

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  15. Synthesis, characterization, and anomalous dielectric and conductivity performance of one-dimensional (bdaH)InSe{sub 2} (bda = 1,4-butanediamine)

    SciTech Connect (OSTI)

    Du, Ke-Zhao; Hu, Wan-Biao [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China) [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Hu, Bing; Guan, Xiang-Feng [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)] [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Huang, Xiao-Ying, E-mail: xyhuang@fjirsm.ac.cn [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)] [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

    2011-11-15T23:59:59.000Z

    Graphical abstract: Anomalous dielectric and conductivity performance have been observed in the organic-containing indium selenide (bdaH)InSe{sub 2}, which are attributed to the water molecules existing in the crystal boundary rather than phase transition. Highlights: {yields} The title compound is the first example of organic-containing one-dimensional indium selenide. {yields} The anomalous dielectric peak is attributed to water molecules in crystal boundary. {yields} The inorganic and organic components of the title compound are connected via hydrogen bonding to form a supramolecular three-dimensional network. -- Abstract: A new indium selenide, namely (bdaH)InSe{sub 2} (1) (bda = 1,4-butanediamine) has been solvothermally synthesized and structurally characterized. It belongs to the non-centrosymmetric space group Fdd2. Its structure features an infinite one-dimensional anionic chain of [InSe{sub 2}]{sub n}{sup n-} with monoprotonated [bdaH]{sup +} as charge compensating cation. The organic [bdaH]{sup +} cations are joined into a supramolecular one-dimensional chain via N-H...N hydrogen bonding, which further interacts with the inorganic chain via N-H...Se and C-H...Se hydrogen bonding, forming a supramolecular three-dimensional network. Based on such a well-defined structure, the thermal stability, optical, conductivity, and dielectric properties were systematically investigated, showing that dielectric constant, as well as conductivity, had a hump at about 95 {sup o}C, which could be attributed to water molecules in the crystal boundary.

  16. Chelated Indium Activable Tracers for Geothermal Reservoirs

    E-Print Network [OSTI]

    Stanford University

    Center (SLAC), for providing the califclmiurh-252 neutron source. Appreciation is extended to Lew, rock size, and temperature on the tracer adsoqjtion and ther- mal degradation. The rock employed for these measurements was gragwacke, a prek valent rock type at The Geysers, California geothermal field. The re

  17. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO); Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-03-24T23:59:59.000Z

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  18. CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar

    E-Print Network [OSTI]

    Sites, James R.

    80523 ABSTRACT Copper indium gallium sulfide, CuIn1-xGaxS2 (CIGS2) solar cells prepared with chemicalCuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag/heterojunction partner/ ZnO/Cr/Ag contact fingers solar cells of area ~0.44 cm 2 were fabricated at FSEC

  19. NREL Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01T23:59:59.000Z

    Many scientists once believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. However, researchers at the National Renewable Energy Laboratory (NREL) thought differently, and they employed GaInP in a material combination that allowed the multijunction cell to flourish. The multijunction cell is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic products.

  20. NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01T23:59:59.000Z

    Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

  1. Modeling and simulation of CuIn{sub 1?x}Ga{sub x}Se{sub 2} based thin film solar cell

    SciTech Connect (OSTI)

    Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

    2014-04-24T23:59:59.000Z

    In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

  2. Phosphors containing boron and metals of Group IIIA and IIIB

    DOE Patents [OSTI]

    Setlur, Anant Achyut; Srivastava, Alok Mani; Comanzo, Holly Ann; Manivannan, Venkatesan

    2006-10-31T23:59:59.000Z

    A phosphor comprises: (a) at least a first metal selected from the group consisting of yttrium and elements of lanthanide series other than europium; (b) at least a second metal selected from the group consisting of aluminum, gallium, indium, and scandium; (c) boron; and (d) europium. The phosphor is used in light source that comprises a UV radiation source to convert UV radiation to visible light.

  3. Lead selenide nanowire solar cells via LPNE and its new found derivatives

    E-Print Network [OSTI]

    Hujdic, Justin

    2012-01-01T23:59:59.000Z

    proposed a ‘new’ photovoltaic efficiency shown in Figure 2.3ultimate photovoltaic conversion efficiency (red) of 65% atultimate photovoltaic conversion efficiency (red) of 65% at

  4. Lead selenide nanowire solar cells via LPNE and its new found derivatives

    E-Print Network [OSTI]

    Hujdic, Justin

    2012-01-01T23:59:59.000Z

    associated with producing a solar cell and will therefore beabsorber layer in my solar cell, and proceed to chapter 3 ofdevices, including my solar cells, and how I have begun

  5. E-Print Network 3.0 - arsenide-zinc selenide core-shell Sample...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    as 3D Scaffolds for New Materials: from Mechanically Strong Polymer Crosslinked Aerogels Summary: . Those 3D core-shell superstructures are true multifunctional materials...

  6. Alkyl Selenide-and Alkyl Thiolate-Functionalized Gold Nanoparticles: Chain Packing and Bond Nature

    E-Print Network [OSTI]

    Parikh, Atul N.

    York 11201, JDR & ANP, Bioscience Division, Los Alamos National Laboratory, Los Alamos, New Mexico, and bonding characteristics were investigated using a combination of transmission electron microscopy, UV-density polymer brushes by surface-initiated living radical polymerization,3 as centers in networks,4 as catalysts

  7. G. J. Snyder Page 1 of 6 THERMOELECTRIC PROPERTIES OF CR3S4-TYPE SELENIDES

    E-Print Network [OSTI]

    extremely low thermal conductivity [2, 3]. For instance, the magnetic semiconductor FeCr2Se4 has been

  8. A study of the reactions of arsinic and arsonic acids with hydrogen sulfide and hydrogen selenide

    E-Print Network [OSTI]

    Applegate, Cynthia Annette

    1986-01-01T23:59:59.000Z

    -diarsa-2, 3, 5-triselenacyclopentane 35 Bond angles in 1, 4&ipheny1-1, 4-diarsa-2, 3, 5-triselenacyclopentane 79 80 INTRODUCTION Many arsenic sulfides occur naturally in the form of minerals due to the natural affinity of arsenic and sulfur for one... another [I]. Arsemc trisulfide, As, S, an orange or yellow powder, is found in nature as the mineral orpiment. Arsenic trisulfide can be prepared by passing a stream of hydrogen sulfide through an acidic solution of arsenic trioxide. Arsenic disulfide...

  9. Lead selenide nanowire solar cells via LPNE and its new found derivatives

    E-Print Network [OSTI]

    Hujdic, Justin

    2012-01-01T23:59:59.000Z

    optical resonance and short-circuit current enhancement toa) Simulated short-circuit current density for oneto an enhanced short-circuit current…………..20 Figure 1.9-

  10. Understanding sensitization behavior of lead selenide photoconductive detectors by charge separation model

    SciTech Connect (OSTI)

    Zhao, Lihua, E-mail: lihua.zhao@ou.edu, E-mail: shi@ou.edu; Qiu, Jijun; Weng, Binbin; Chang, Caleb; Yuan, Zijian; Shi, Zhisheng, E-mail: lihua.zhao@ou.edu, E-mail: shi@ou.edu [School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2014-02-28T23:59:59.000Z

    We introduce a charge separation model in this work to explain the mechanism of enhanced photoconductivity of polycrystalline lead salt photoconductors. Our results show that this model could clarify the heuristic fabrication processes of such lead salt detectors that were not well understood and often considered mysterious for nearly a century. The improved lifetime and performance of the device, e.g., responsivity, are attributed to the spatial separation of holes and electrons, hence less possibility of carrier recombination. This model shows that in addition to crystal quality the size of crystallites, the depth of outer conversion layer, and doping concentration could all affect detector performance. The simulation results agree well with experimental results and thus offer a very useful tool for further improvement of lead salt detectors. The model was developed with lead salt family of photoconductors in mind, but may well be applicable to a wider class of semiconducting films.

  11. Short time duration electrophoretic deposition of cadmium selenide nanocrystals on Jamin M. Johnston

    E-Print Network [OSTI]

    Smith, Nathanael J.

    a similar mechanism to dye-sensitized solar cells, where photo electrons are predominantly generated, nanocrystals provide some key advantages over current dye sensitized solar cell devices. Primarily solar cells provide a viable and promising solution. The research done in this paper addresses the use

  12. Syntheses, Structure, Magnetism, and Optical Properties of Lutetium-based Interlanthanide Selenides

    E-Print Network [OSTI]

    Jin, Geng Bang

    2007-01-01T23:59:59.000Z

    Syntheses, Structure, Magnetism, and Optical Properties ofin some cases atypical magnetism. 1-21 New developments insimpler systems in term of magnetism and less investigated,

  13. Lead selenide nanowire solar cells via LPNE and its new found derivatives

    E-Print Network [OSTI]

    Hujdic, Justin

    2012-01-01T23:59:59.000Z

    spacing or pitch on nickel electrodeposition time………………70spacing or pitch on nickel electrodeposition time. The errorof electrodeposition changes as the height of the nickel

  14. Solvent effects on nuclear shieldings and spinspin couplings of hydrogen selenide

    E-Print Network [OSTI]

    Helgaker, Trygve

    , Linko¨ping University, S-58183 Linko¨ping, Sweden Trygve Helgaker Department of Chemistry, University deuteration1 and for which a gas-to-liquid shift of more than 100 ppm has been observed.2,3 Selenium compounds are important in organic chemistry and biochemistry.4­7 Owing to the rather high natural abundance of the spin-1

  15. Lead selenide nanowire solar cells via LPNE and its new found derivatives

    E-Print Network [OSTI]

    Hujdic, Justin

    2012-01-01T23:59:59.000Z

    cheaper than the average electricity cost and potentiallyCompare this to the average cost of electricity the consumer

  16. Photovoltaic effect of lead-free (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} ferroelectric thin film using Pt and indium tin oxide top electrodes

    SciTech Connect (OSTI)

    Seok Woo, Won; Sik Won, Sung; Won Ahn, Chang; Chae, Song A; Won Kim, Ill, E-mail: kimiw@mail.ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of); Ullah, Aman [Department of Physics, University of Science and Technology, Bannu, Khyber Pakhtunkhwa (Pakistan)

    2014-01-21T23:59:59.000Z

    We have grown a Bi-layer structure (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} (NKBiT) ferroelectric thin film on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(100) substrate by using the chemical solution deposition method and deposited two kinds of thin Pt and indium tin oxide (ITO) top electrodes. The photovoltaic behaviors of Pt/NKBiT/Pt and ITO/NKBit/Pt capacitors were investigated over the wavelength range of 300–500?nm. When NKBiT thin film is illuminated by the corresponding wavelength of the film's energy band gap (E{sub g}), a photocurrent is generated due to the Schottky barrier between electrode and film, and an internal electric field is originated by the depolarization field. The maximum photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor in the poled-up state are obtained as 45.75?nA/cm{sup 2} and 0.035%, respectively, at 352?nm. The photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor increased to 3.5 times higher than that of the Pt/NKBiT/Pt capacitor.

  17. Photovoltaic Materials

    SciTech Connect (OSTI)

    Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

    2012-10-15T23:59:59.000Z

    The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication of high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational cells and modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were combined with others to study the effect of defects on the performance of crystalline silicon and

  18. High-efficiency solar cell and method for fabrication

    DOE Patents [OSTI]

    Hou, H.Q.; Reinhardt, K.C.

    1999-08-31T23:59:59.000Z

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

  19. High-efficiency solar cell and method for fabrication

    DOE Patents [OSTI]

    Hou, Hong Q. (Albuquerque, NM); Reinhardt, Kitt C. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

  20. Electronic Transport Characteristics of Gallium Nitride Nanowire-based Nanocircuits

    E-Print Network [OSTI]

    Ayres, Virginia

    . The measurements indicate a working field effect transistor utilizing a global back gate configuration. Very high and drain contacts were patterned using electron beam lithography, with Ti/Au used for the conducting source and drain material. The backside of the wafer was stripped of silicon dioxide using hydrofluoric acid and Ti

  1. Neutron irradiation effects on metal-gallium nitride contacts

    SciTech Connect (OSTI)

    Katz, Evan J.; Lin, Chung-Han; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J., E-mail: brillson.1@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-03-28T23:59:59.000Z

    We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15}?n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15}?n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16}?n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.

  2. Neutron irradiation effects on gallium nitride-based Schottky diodes

    SciTech Connect (OSTI)

    Lin, Chung-Han; Katz, Evan J.; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)] [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States)] [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States) [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

    2013-10-14T23:59:59.000Z

    Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties.

  3. Superconductivity in gallium-substituted Ba8Si46 clathrates

    E-Print Network [OSTI]

    Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

    2007-01-01T23:59:59.000Z

    superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

  4. Production of gallium-66, a positron emitting nuclide for radioimmunotherapy

    SciTech Connect (OSTI)

    Mirzadeh, S. (Oak Ridge National Lab., TN (United States)); Chu, Y.Y. (Brookhaven National Lab., Upton, NY (United States))

    1991-01-01T23:59:59.000Z

    Excitation functions for production of {sup 66}Ga via {alpha}-induced nuclear reactions on enriched {sup 66}Zn and {sup 64}Zn have been measured with E{sub {alpha}}{le}27.3 MeV and E{sub {alpha}}{le}43.7 MeV employing the stack-thin target technique. In addition, the induced activity of {sup 67} Ga in the same sets of targets allowed an evaluation of the excitation functions of the corresponding nuclear reactions.

  5. Production of gallium-66, positron emitting nuclide for radioimmumotherapy

    SciTech Connect (OSTI)

    Mirzadeh, S. (Oak Ridge National Lab., TN (USA)); Chu, Yung Yee (Brookhaven National Lab., Upton, NY (USA))

    1991-01-01T23:59:59.000Z

    Excitation functions for production of {sup 66}Ga via {alpha}-induced nuclear reactions on enriched {sup 66}Zn have been measured with E{sub {alpha}}{le}27.3 MeV and E{sub {alpha}}{le}43.7 MeV employing the stack-thin target technique. In addition, the induced activity of {sup 67}Ga in the same sets of targets allowed an evaluation of the excitation functions of the corresponding nuclear reactions. 17 refs., 2 figs., 2 tabs.

  6. Production of gallium-66, a positron emitting nuclide for radioimmunotherapy

    SciTech Connect (OSTI)

    Mirzadeh, S. [Oak Ridge National Lab., TN (United States); Chu, Y.Y. [Brookhaven National Lab., Upton, NY (United States)

    1991-12-31T23:59:59.000Z

    Excitation functions for production of {sup 66}Ga via {alpha}-induced nuclear reactions on enriched {sup 66}Zn and {sup 64}Zn have been measured with E{sub {alpha}}{le}27.3 MeV and E{sub {alpha}}{le}43.7 MeV employing the stack-thin target technique. In addition, the induced activity of {sup 67} Ga in the same sets of targets allowed an evaluation of the excitation functions of the corresponding nuclear reactions.

  7. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect (OSTI)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01T23:59:59.000Z

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

  8. Superconductivity in gallium-substituted Ba8Si46 clathrates 

    E-Print Network [OSTI]

    Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

    2007-01-01T23:59:59.000Z

    superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

  9. Rutherford backscattering analysis of gallium implanted 316 stainless steel 

    E-Print Network [OSTI]

    Ortensi, Javier

    2000-01-01T23:59:59.000Z

    Ion implantation of Ga ions into 316 stainless steel was performed at fluences ranging from 8x10¹? to 10¹? ions/cm². The depth profile of Ga in the steel was analyzed via Rutherford Backscattering and ToFSIMS. The surface effects were...

  10. Strongly localized excitons in gallium nitride C. Wetzel,a)

    E-Print Network [OSTI]

    Wetzel, Christian M.

    report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV T 6 K . These lines lie and characterization of excitonic luminescence transitions in wurtzite GaN about 150 meV below the fundamental elec transitions at 3.309 and 3.365 eV. Wurtzite GaN epilayers were grown by a high tempera- ture vapor phase

  11. GALLIUM--1997 29.1 By Deborah A. Kramer

    E-Print Network [OSTI]

    players. They also are used in short-range fiber optic communications systems, satellite communicationsAs is manufactured into optoelectronic devices (LED's, laser diodes, photodetectors, and solar cells) and integrated energy to a coherent light output. Laser diodes, also called semiconductor lasers or injection laser

  12. Monolithic series-connected gallium arsenide converter development

    SciTech Connect (OSTI)

    Spitzer, M.B.; McClelland, R.W.; Dingle, B.D.; Dingle, J.E.; Hill, D.S. (Kopin Corp., Taunton, MA (United States)); Rose, B.H. (Sandia National Labs., Albuquerque, NM (United States))

    1991-01-01T23:59:59.000Z

    We report the development of monolithic GaAs photovoltaic devices intended to convert light generated by a laser or other bright source to electricity. The converters described here can provide higher operating voltage than is possible using a single-junction converter, owing to use of a monolithic circuit that forms a planar series-connected string of single-junction sub-cells. This planar monolithic circuit is arranged to deliver the desired voltage and current during operation at the maximum power point. The paper describes two-, six-, and twelve-junction converters intended for illumination by a laser diode with a wavelength of 0.8 {mu}m. Design and characterization data are presented for optical power in the range of 100 mW to 1 W. The best conversion efficiency exceeds 50%. 9 refs., 4 figs., 2 tabs.

  13. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode 

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01T23:59:59.000Z

    ) William Brian Kinard, B. S, Texas A&M University Chair of Advisory Committee: Mark H. Weichold The objective of this research was to design and fabricate a device capable of electrically contrulhng current through a vertical resonant tunneling diode.... Addi- tionally, this modulation of current must not aB'ect the normal cperation of the resonant tunneling diode such as shifting resonant bias. Device arrays of various sizes were successfully 1'abricated for the first time utilizing unique...

  14. Rutherford backscattering analysis of gallium implanted 316 stainless steel

    E-Print Network [OSTI]

    Ortensi, Javier

    2000-01-01T23:59:59.000Z

    % was attained at 300 [] and deeper. The possible enhanced diffusion of Ga was observed, but not necessarily through the grain boundaries. Although there was no indication of compound formation, significant pitting was observed at high fluences. Repassivation...

  15. Gallium Nitride Integrated Gas/Temperature Sensors for

    E-Print Network [OSTI]

    precision and accuracy · Field test for reliability and lifetime · 1) Sensor Needs and Requirements://www.ott.doe.gov/pdfs/sensor_needs.pdf #12;4 Approach GaN based devices and circuits are an attractive option for high temperature electronic) and hydrogen (30-70%) 80% Complete 2- Determine confounding effects due to multiple components 80% Complete 3

  16. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown...

    Energy Savers [EERE]

    silicon Widespread adoption of efficient load architectures enabled by GaN-based power electronics and lighting can lead to a 25% reduction in world energy consumption ...

  17. Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals

    SciTech Connect (OSTI)

    Wood, A. W. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Collino, R. R. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Cardozo, B. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Naab, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Wang, Y. Q. [Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, New Mexico 87545 (United States); Goldman, R. S. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2011-12-15T23:59:59.000Z

    We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.

  18. abdominal gallium-67 citrate: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    species (bigeye, Thunnus obesus; yellowfin, T. albacares; and skipjack, Katsuwonus pelamis) Environmental Sciences and Ecology Websites Summary: : 26 October 2004 Key words:...

  19. Gallium Arsenide (GaAs) EDWARD D. PALIK

    E-Print Network [OSTI]

    Pulfrey, David L.

    constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

  20. Broadband electrooptic modulators based on gallium arsenide materials

    E-Print Network [OSTI]

    Shamir, Orit A

    2012-01-01T23:59:59.000Z

    Optical Arbitrary Waveform Generation (OAWG) combines frequency combs and frequency-by- frequency pulse shapers to synthesize optical waveforms. The OAWG technique has a wide variety of applications, ranging from high ...

  1. Self-aligned submicron gate length gallium arsenide MESFET 

    E-Print Network [OSTI]

    Huang, Hsien-Ching

    1987-01-01T23:59:59.000Z

    38 21. Proximity cap annealing . 22. Temperature profile of post implant anneal 46 47 23. 24. 25. 26. 27. 28. 29. 30. "Pits" or holes in GaAs post implant anneal without sacrificial cap Silicon monoxide source (bafile box) used.... 16(b)). The bottom resist layer is then further etched in the oxygen plasma to produce undercutting for the desire gate structure. The amount of undercut is determined by the desired length of the gate and is the width of the remaining resist...

  2. Process for growing epitaxial gallium nitride and composite wafers

    DOE Patents [OSTI]

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13T23:59:59.000Z

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  3. Growth and structure of sputtered gallium nitride films

    SciTech Connect (OSTI)

    Yadav, Brajesh S.; Major, S. S.; Srinivasa, R. S. [Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2007-10-01T23:59:59.000Z

    GaN films have been deposited by radio frequency sputtering of a GaAs target with pure nitrogen. The growth, composition, and structure of the films deposited on quartz substrates have been studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films deposited below 300 deg. C are amorphous and As rich. Above 300 deg. C, polycrystalline, hexagonal GaN is formed, along with As rich amorphous phase, which reduces with increasing substrate temperature. At a substrate temperature of 700 deg. C, GaN films, practically free of amorphous phase, and As (<0.5 at. %) are formed. The preferred orientation depends strongly on the substrate temperature and is controlled by surface diffusion of adatoms during growth stage. Below 500 deg. C, the surface diffusion between planes dominates and results in the (1011) preferred orientation. Above 500 deg. C, the surface diffusion between grains takes over and results in (0002) preferred orientation.

  4. Electrochemical Solution Growth: Gallium Nitride Crystal Growth - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  5. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOil & Gas »ofMarketing | Department ofEnergy Nuclear

  6. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't YourTransport(Fact Sheet), GeothermalGridHYDROGEND D e e p p a a r rRancho Cordoba,High-Quality,

  7. Electron transport in the III-V nitride alloys

    SciTech Connect (OSTI)

    Foutz, B.E.; O'Leary, S.K.; Shur, M.S.; Eastman, L.F.

    1999-07-01T23:59:59.000Z

    The authors study electron transport in the alloys of aluminum nitride and gallium nitride and alloys of indium nitride and gallium nitride. In particular, employing Monte Carlo simulations they determine the velocity-field characteristics associated with these alloys for various alloy compositions. They also determine the dependence of the low-field mobility on the alloy composition. They find that while the low-field mobility is a strong function of the alloy composition, the peak and saturation drift velocities exhibit a more mild dependence. Transient electron transport is also considered. They find that the velocity overshoot characteristic is a strong function of the alloy composition. The device implications of these results are discussed.

  8. Ohmic contact metallization on p-type indium phosphide

    E-Print Network [OSTI]

    Park, Moonho

    1993-01-01T23:59:59.000Z

    . On Crystacomm p-InP 2. On Sumitomo p-InP E Pd(100k)/p-Inp Contact. 1. On Crystacomm p-InP 2, On Sumitomo p-InP 16 16 19 24 28 33 35 35 38 IV DISCUSSION AND CONCLUSION A. Different Electrical Properties of Sumitomo and Crystacomm p-InPWafers B...)/Sb(5 A)/ p-InP(Crystacomm) ohmic contact 3. 12 I-V characteristic of Ge/Pd and Ge/Pd/Mg/Pd on sumitomo p-lnP. Samples were annealed at 420 'C for 30 sec on hot plate . . . . . . . . . . . . . . . . . 3. 13 Determination of specific resistivity...

  9. Integration of indium phosphide based devices with flexible substrates

    E-Print Network [OSTI]

    Chen, Wayne Huai

    2011-01-01T23:59:59.000Z

    the transport properties of heat and hydrogen to be that ofhydrogen- induced damage in the InP render relatively poor electrical properties (properties and could be modified with low doses of hydrogen

  10. adoptively transferred indium-111: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Afshin J. 140 Mass transfer andMass transfer and Mass transfer andMass transfer and Fossil Fuels Websites Summary: eknik Mass transfer andMass transfer and arationste Mass...

  11. Spectroscopic properties of colloidal indium phosphide quantum wires

    E-Print Network [OSTI]

    Weng, Fudong

    2008-01-01T23:59:59.000Z

    Wires Fudong Wang, §‡ Heng Yu, §† Jingbo Li, ?? QinglingQuantum Wires Fudong Wang, Heng Yu, Jingbo Li, Qingling

  12. Indium Growth and Island Height Control on Si Submonolayer Phases

    SciTech Connect (OSTI)

    Chen, Jizhou

    2009-05-09T23:59:59.000Z

    Nanotechnology refers any technique that involves about object with nanoscale (10{sup -9} m) or even smaller. It has become more and more important in recently years and has changed our world dramatically. Most of modern electronic devices today should thanks to the miniaturizing driven by development of nanotechnology. Recent years, more and more governments are investing huge amount of money in research related to nanotechnology. There are two major reasons that nanostructure is so fascinate. The first one is the miniaturizing. It is obvious that if we can make products smaller without losing the features, we can save the cost and increase the performance dramatically. For an example, the first computer in the world, ENIAC, which occupied several rooms, is less powerful than the cheapest calculator today. Today's chips with sizes of less than half an inch contain millions of basic units. All these should thank to the development of nanotechnology. The other reason is that when we come to nanoscale, there are many new effects due to the quantum effect which can't be found in large systems. For an example, quantum dots (QDs) are systems which sizes are below 1{micro}m(10{sup -6}m) and restricted in three dimensions. There are many interesting quantum effects in QDs, including discrete energy levels, and interdot coupling. Due to these properties and their small sizes, QDs have varies potential applications such as quantum computing, probe, light emitting device, solar cells, and laser. To meet the requirement of the nanoelectrical applications, the QDs must be grown highly uniformly because their property is highly dependent on their sizes. The major methods to grow uniform QDs include epitaxial, and lithograph. Lithography is a process to make patterns on a thin film by selectively removing certain parts of the film. Using this method, people have good control over size, location and spacing of QDs. For an example, the Extreme ultraviolet lithography (EUVL) have a wave length of 13.4nm so it can curve on the surface of an sample to make structure as small as the order of 10nm. however, lithograph usually causes permanent damages to the surface and in many cases the QDs are damaged during the lithograph and therefore result in high percentage of defects. Quantum size effect has attracted more and more interests in surface science due to many of its effects. One of its effects is the height preference in film growing and the resulting possibility of uniformly sized self-assemble nanostructure. The experiment of Pb islands on In 4x1 phase shows that both the height and the width can be controlled by proper growth conditions, which expands the growth dimensions from 1 to 2. This discover leads us to study the In/Pb interface. In Ch.3, we found that the Pb islands growing on In 4x1-Si(111) surface which have uniform height due to QSE and uniform width due to the constriction of In 4x1 lattice have unexpected stability. These islands are stable in even RT, unlike usual nanostructures on Pb/Si surface which are stable only at low temperature. Since similar structures are usually grown at low temperature, this discovery makes the grown structures closer to technological applications. It also shows the unusual of In/Pb interface. Then we studied the In islands grown on Pb-{alpha}-{radical}3x{radical}3-Si(111) phase in Ch.4. These islands have fcc structure in the first few layers, and then convert to bct structure. The In fcc islands have sharp height preference due to QSE like Pb islands. However, the preferred height is different (7 layer for Pb on Si 7x7 and 4 layer for Pb on In 4x1), due to the difference of interface. The In islands structure prefers to be bct than fcc with coverage increase. It is quantitatively supported by first-principle calculation. Unexpectedly, the In islands grown on various of In interfaces didn't show QSE effects and phase transition from fcc and bct structures as on the Pb-{alpha} interface (Ch.6). In g(s) curve there is no clear oscillations in the g(s) curve as the In on Pb-{alpha} phase. This

  13. Is lung sequestration of indium-111-labeled granulocytes organ specific

    SciTech Connect (OSTI)

    Williams, J.H. Jr.; Wilson, A.F.; Moser, K.M. (Univ. of California, Irvine (USA))

    1989-09-01T23:59:59.000Z

    Transient sequestration of polymorphonuclear leukocytes (PMN) in the normal lungs of animals occurred immediately following intravenous injection of 111In-labeled PMN. We investigated the organ specificity of this process. Equal amounts of homologous PMN, derived from the intravascular space and labeled with (111In)oxine, were infused either intravenously (i.v.) or intraarterially (i.a.) into pairs of rats. Changes in radioactivity emitted from three regions--representing lung, liver and spleen, and lower body--were determined from images during the following hour. A nonspecific character was demonstrated by the transient sequestration of activity in the lower body following i.a. infusions. However, the rate of initial clearance of activity (first 30 min) from the lungs of i.v.-infused rats was relatively slower than from the lower body of i.a.-infused rats. This suggests the presence of a lung-specific as well, which may be important for localization of PMN-related events to the lung.

  14. Efficient Electro-Optical Modulation Based on Indium Tin Oxide

    E-Print Network [OSTI]

    Shi, Kaifeng

    2015-01-01T23:59:59.000Z

    We experimentally demonstrate several electro-optical modulators based on transparent conducting oxides. Our previous work demonstrated the modulator structure on glass substrate with broadband bias polarity-dependent modulation. Further exploration shows similar modulation effect of the modulator on quartz and silicon substrate.

  15. Spectroscopic properties of colloidal indium phosphide quantum wires

    E-Print Network [OSTI]

    Weng, Fudong

    2008-01-01T23:59:59.000Z

    E. ; Kadavanich, A. ; Alivisatos, A. P. Nature Manna, L. ;Scher, E. C. ; Alivisatos, A. P. J. Am. Chem. Soc.S; Hu, J. ; Yang, W. ; Alivisatos, A. P. Nano Lett. 2001, 1,

  16. INDIUM--2002 37.1 By John D. Jorgenson

    E-Print Network [OSTI]

    smelter (Platts Metals Week, 2001). Shortly after closure of the smelter, the EPA declared cleanup. Although some firms have bid on the cleanup of the smelter site, none have submitted a proposal

  17. Integration of indium phosphide based devices with flexible substrates

    E-Print Network [OSTI]

    Chen, Wayne Huai

    2011-01-01T23:59:59.000Z

    Silicon Layers onto Flexible Substrates”, Electrochemicalof single-crystalline InP with flexible substrates", AppliedInfrared Bolometers on Flexible Polyimide Substrates,"

  18. NREL: Process Development and Integration Laboratory - Copper Indium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for Renewable Energy: Grid Integration NRELCost of6 July 16,StandardsCapabilities

  19. Indium Phosphide Polycrystalline Films on Metal Foil for PV Applications -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn Other News link to facebook link to twittersupportEnergy

  20. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

    2006-04-04T23:59:59.000Z

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  1. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10T23:59:59.000Z

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  2. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

    2004-07-13T23:59:59.000Z

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  3. NREL Scientists Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01T23:59:59.000Z

    Before 1984, many scientists believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. One researcher at the Solar Energy Research Institute (SERI) thought differently. His name was Jerry Olson, and his innovative thinking changed solar history. Olson identified a material combination that allowed the multijunction cell to flourish. It is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic (CPV) products.

  4. Metals Production Requirements for Rapid Photovoltaics Deployment

    E-Print Network [OSTI]

    Kavlak, Goksin; Jaffe, Robert L; Trancik, Jessika E

    2015-01-01T23:59:59.000Z

    If global photovoltaics (PV) deployment grows rapidly, the required input materials need to be supplied at an increasing rate. In this paper, we quantify the effect of PV deployment levels on the scale of metals production. For example, we find that if cadmium telluride {copper indium gallium diselenide} PV accounts for more than 3% {10%} of electricity generation by 2030, the required growth rates for the production of indium and tellurium would exceed historically-observed production growth rates for a large set of metals. In contrast, even if crystalline silicon PV supplies all electricity in 2030, the required silicon production growth rate would fall within the historical range. More generally, this paper highlights possible constraints to the rate of scaling up metals production for some PV technologies, and outlines an approach to assessing projected metals growth requirements against an ensemble of past growth rates from across the metals production sector. The framework developed in this paper may be...

  5. Environmental issues related to commercialization of CulnSe{sub 2}- based photovoltaics

    SciTech Connect (OSTI)

    Eberspacher, C. [UNISUN, Newbury Park, CA (United States); Fthenakis, V.M.; Moskowitz, P.D.

    1996-07-01T23:59:59.000Z

    One of the most promising materials for low-cost thin film photovoltaic cells is copper indium selenide (CuInSe{sub 2} or CIS). As with any new material, successful commercialization of CIS photovoltaic (PV) technology will require attention to environmental issues related to the sources of raw materials, their usage, and the disposal and/or recycling of products at the end of their useful life. This paper focuses on three specific environmental issues related to CIS technology: (i) Economics of the use and re-use of materials; (ii) regulations on environmental disposal and waste handling, and (iii) logistics and economics of recycling and disposing of products by industries faced with comparable environmental issues.

  6. New Approaches To An Indium Ion OpticalNew Approaches To An Indium Ion Optical Frequency StandardFrequency Standard

    E-Print Network [OSTI]

    Hensinger, Winfried

    by sympathetic cooling (currently by 40Ca+, in future by 115Cd+) · Detection is provided by three methods 1+ optical clock at NICT 3 1st system: no magnetic shield 2nd system: with magnetic shield However ·cooling/detection transition (1S0-1P1) in VUV hard to access 4 Quantum logic spectroscopy (QLS) recorded

  7. Recombination in Low-Bandgap InGaAs

    SciTech Connect (OSTI)

    Gfroerer, T. H.; Wanlass, M. W.

    2006-01-01T23:59:59.000Z

    We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

  8. Evaluation of critical materials in five additional advance design photovoltaic cells

    SciTech Connect (OSTI)

    Smith, S.A.; Watts, R.L.; Martin, P.; Gurwell, W.E.

    1981-02-01T23:59:59.000Z

    The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. The Critical Materials Assessment Program (CMAP) screens the designs and their supply chains and identifies potential shortages which might preclude large-scale use of the technologies. The results of the screening of five advanced PV cell designs are presented: (1) indium phosphide/cadmium sulfide, (2) zinc phosphide, (3) cadmium telluride/cadmium sulfide, (4) copper indium selenium, and (5) cadmium selenide photoelectrochemical. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 Gwe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has a 5 GWe of peak capacity by the year 2000, so that the total online capacity for the five cells is 25 GWe. Based on a review of the preliminary baseline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. The CMAP methodology used to identify critical materials is described; and detailed characterizations of the advanced photovoltaic cell designs under investigation, descriptions of additional cell production processes, and the results are presented. (WHK)

  9. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2011. One company in Utah

    E-Print Network [OSTI]

    % was used in research and development, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical equipment

  10. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2001. Two companies in

    E-Print Network [OSTI]

    , specialty alloys, and other applications. Optoelectronic devices were used in areas such as consumer goods, medical equipment, industrial components, telecommunications, and aerospace applications. Integrated

  11. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2000. Two companies in

    E-Print Network [OSTI]

    and development, specialty alloys, and other applications. Optoelectronic devices were used in areas such as consumer goods, medical equipment, industrial components, telecommunications, and aerospace applications

  12. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2003. One company in

    E-Print Network [OSTI]

    , specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

  13. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2006. One company in Utah

    E-Print Network [OSTI]

    , specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

  14. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2010. One company in Utah

    E-Print Network [OSTI]

    and development, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical equipment, and telecommunications. ICs were used

  15. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2007. One company in Utah

    E-Print Network [OSTI]

    and development, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical equipment, and telecommunications. ICs were used

  16. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2004. One company in Utah

    E-Print Network [OSTI]

    % was used in research and development, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical equipment

  17. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2008. One company in Utah

    E-Print Network [OSTI]

    and development, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical equipment, and telecommunications. ICs were used

  18. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01T23:59:59.000Z

    Converted White-Light-Emitting Diodes," Jap. J. Appl.doped III-N Light-Emitting Diodes," Appl. Phys. Lett. , 84 (in Packaging High Power Light Emitting Diode Arrays," Appl.

  19. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01T23:59:59.000Z

    High-Color-Rendering LED Lamps Using Oxyfluoride andHigh-pressure mercury lamp LED Luxeon white 5 W LED Cree LRpressure mercury lamps; some Cree LEDs have even comparable

  20. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01T23:59:59.000Z

    from GaN:Tb 3+ Powders and Thin Films Deposited by MOVPE andHirata, "Eu 3+ Activated GaN Thin Films Grown on Sapphire byTb 3+ in GaN Powders and Thin Films," ECS Trans. , J. Laski,

  1. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01T23:59:59.000Z

    Growth of Single Crystal GaN Substrate using Hydride VaporZnO Nanowire on a p-GaN Substrate," J. Phys. Chem. C , 114Grown on GaN Nanocrystalline Powder Substrate," J. Cryst.

  2. Three-dimensional assemblies built up by quantum dots in size-quantization regime: Band gap shifts due to size-distribution of cadmium selenide nanoparticles

    SciTech Connect (OSTI)

    Pejova, Biljana, E-mail: biljana@pmf.ukim.mk

    2013-11-15T23:59:59.000Z

    In the present study, it is predicted that the band gap energy of a three-dimensional quantum dot assembly exhibits a red shift when the dispersion of the crystal size distribution is enlarged, even at a fixed average value thereof. The effect is manifested when the size quantization regime in individual quantum dots constituting the assembly has been entered. Under the same conditions, the sub-band gap absorption tails are characterized with large Urbach energies, which could be one or two orders of magnitude larger than the value characteristic for the non-quantized case. - Graphical abstract: Band gap shifts due to size-distribution of nanoparticles in 3D assemblies built up by quantum dots in size-quantization regime. Display Omitted - Highlights: • Optical absorption of 3D QD assemblies in size-quantization regime is modeled. • Band gap energy of the QD solid depends on the size-distribution of the nanoparticles. • QD solid samples with same ?R? exhibit band gap shift depending on size distribution. • QD size distribution leads to large Urbach energies.

  3. Tuning the Optical Properties of Nanoscale Materials on Surfaces Through Controlled Exchange Reactions on Cadmium Selenide Quantum Dots and Patterning of Gold and QD Nanoparticle Arrays 

    E-Print Network [OSTI]

    Pravitasari, Arika

    2013-11-11T23:59:59.000Z

    nanostructure arrays serve as great platforms not only for future applications in plasmonic based sensing and optical devices but also for the fundamental studies of their localized surface plasmon resonance (LSPR). An alternative method of patterning, a...

  4. Tuning the Optical Properties of Nanoscale Materials on Surfaces Through Controlled Exchange Reactions on Cadmium Selenide Quantum Dots and Patterning of Gold and QD Nanoparticle Arrays

    E-Print Network [OSTI]

    Pravitasari, Arika

    2013-11-11T23:59:59.000Z

    and economical ways to pattern QDs with different optical and surface properties on the same platform. This could be beneficial for the development of some QD based devices, such as: QD based light emitting diodes (LED), where each emitted color can... photobleaching as compared to organic fluorophores.50 Applications of QDs have emerged in numerous areas such as bio-imaging,9 labeling and sensing,51 solar cells,7, 18, 52 and light emitting diodes (LEDs).16, 53-59 CdSe QDs were chosen for the interest...

  5. (Data in metric tons, unless noted) Domestic Production and Use: No indium was recovered from ores in the United States in 1995. Domestic indium

    E-Print Network [OSTI]

    , refinery NA NA NA NA -- Imports for consumption 36.3 36.3 73.4 70.2 73.0 Exports NA NA NA NA NA marketed through a U.S. company. World Refinery Production, Reserves, and Reserve Base: Refinery

  6. Production of films and powders for semiconductor device applications

    DOE Patents [OSTI]

    Bhattacharya, R.N.; Noufi, R.; Li Wang

    1998-03-24T23:59:59.000Z

    A process is described for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu{sub x}Se{sub n}, wherein x=1--2 and n=1--3; (2) Cu{sub x}Ga{sub y}Se{sub n}, wherein x=1--2, y=0--1 and n=1--3; (3) Cu{sub x}In{sub y}Se{sub n}, wherein x=1--2.27, y=0.72--2 and n=1--3; (4) Cu{sub x}(InGa){sub y}Se{sub n}, wherein x=1--2.17, y=0.96--2 and n=1--3; (5) In{sub y}Se{sub n}, wherein y=1--2.3 and n=1--3; (6) Cu{sub x}S{sub n}, wherein x=1--2 and n=1--3; and (7) Cu{sub x}(InGa){sub y}(SeS){sub n}, wherein x=1--2, y=0.07--2 and n=0.663--3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes. 4 figs.

  7. Exchanging Ohmic Losses in Metamaterial Absorbers with Useful Optical Absorption for Photovoltaics

    E-Print Network [OSTI]

    Vora, Ankit; Pala, Nezih; Kulkarni, Anand; Pearce, Joshua M; Güney, Durdu Ö

    2014-01-01T23:59:59.000Z

    Using metamaterial absorbers, we have shown that metallic layers in the absorbers do not necessarily constitute undesired resistive heating problem for photovoltaics. Tailoring the geometric skin depth of metals and employing the natural bulk absorbance characteristics of the semiconductors in those absorbers can enable the exchange of undesired resistive losses with the useful optical absorbance in the active semiconductors. Thus, Ohmic loss dominated metamaterial absorbers can be converted into photovoltaic near-perfect absorbers with the advantage of harvesting the full potential of light management offered by the metamaterial absorbers. Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%-95% absorbance can be achieved in the semiconductor layers of the converted metamaterial absorbers. Besides other metamaterial and plasmonic devices, our results may also apply to photodectors and other metal or semiconductor based optical devices where resistive losses and p...

  8. Recovery of enriched stable isotopes in radionuclide production

    SciTech Connect (OSTI)

    Razbash, A.A.; Sevastyanov, Yu.G.; Polyakov, O.N.; Krasnov, N.N.; Konyakhin, N.A.; Tolstouhov, Yu.V.; Maklachkov, A.G. [Cyclotron Co. Ltd., Obninsk (Russian Federation)

    1994-12-31T23:59:59.000Z

    The wide application of radionuclides in different fields of science and industry demanded an increase of their production. One of the ways to increase the radionuclide production on present cyclotrons is the use of the targets from enriched stable isotopes. This allows one to raise the productivity in some cases by two or more times and to increase radionuclidic purity. It should be noted, however, that enriched stable isotopes are very expensive. Therefore it is advisable to use such raw materials more than once. In the last ten years, The authors have used stable isotopes extensively for making of targets. Zinc-67 and zinc-68, cadmium-111 and cadmium-112, nickel-58, silver-109, thallium-203 have been employed for the production of gallium-67, indium-111, cobalt-57, cadmium-109 and thallium-201, respectively. The technique for the recovery of enriched stable isotopes has been developed. In this report the schemes of the recovering processes are presented.

  9. LIFE CYCLE INVENTORY ANALYSIS IN THE PRODUCTION OF METALS USED IN PHOTOVOLTAICS.

    SciTech Connect (OSTI)

    FTHENAKIS,V.M.; KIM, H.C.; WANG, W.

    2007-03-30T23:59:59.000Z

    Material flows and emissions in all the stages of production of zinc, copper, aluminum, cadmium, indium, germanium, gallium, selenium, tellurium, and molybdenum were investigated. These metals are used selectively in the manufacture of solar cells, and emission and energy factors in their production are used in the Life Cycle Analysis (LCA) of photovoltaics. Significant changes have occurred in the production and associated emissions for these metals over the last 10 years, which are not described in the LCA databases. Furthermore, emission and energy factors for several of the by-products of the base metal production were lacking. This report aims in updating the life-cycle inventories associated with the production of the base metals (Zn, Cu, Al, Mo) and in defining the emission and energy allocations for the minor metals (Cd, In, Ge, Se, Te and Ga) used in photovoltaics.

  10. Radiolabeled red blood cells: status, problems, and prospects

    SciTech Connect (OSTI)

    Srivastava, S.C.

    1983-01-01T23:59:59.000Z

    Radionuclidic labels for red cells can be divided into two main categories - cohort or pulse labels, and random labels. The random labels are incorporated into circulating cells of all ages and the labeling process is usually carried out in vitro. The red cell labels in predominant use involve random labeling and employ technetium-99m, chromium-51, indium-111, and gallium-68, roughly in that order. The extent of usefulness depends on the properties of the label such as the half-life, decay mode, and in-vivo stability, etc. Labeled cells can be used for red cell survival measurements when the half-life of the radionuclide is sufficiently long. The major portion of this article deals with random labels.

  11. NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1991--31 July 1992

    SciTech Connect (OSTI)

    Not Available

    1992-08-01T23:59:59.000Z

    This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help people keep abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous silicon research; polycrystalline thin films (including copper indium diselenide, cadmium telluride, and thin-film silicon); crystalline materials and advanced concepts (including silicon, gallium arsenide, and other group III-V materials); and PV manufacturing technology development (which may include manufacturing information for various types of PV materials).

  12. Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

    SciTech Connect (OSTI)

    Trindade, A. J., E-mail: antonio.trindade@strath.ac.uk; Guilhabert, B.; Massoubre, D.; Laurand, N.; Gu, E.; Watson, I. M.; Dawson, M. D. [Institute of Photonics, SUPA, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom)] [Institute of Photonics, SUPA, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom); Zhu, D.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2013-12-16T23:59:59.000Z

    The transfer printing of 2 ?m-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150?nm (±14?nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486?nm with a forward-directed optical output power up to 80??W (355 mW/cm{sup 2}) when operated at a current density of 20?A/cm{sup 2}.

  13. FTIR and FT-PL Spectroscopic Analysis of TPV Materials and Devices

    SciTech Connect (OSTI)

    Webb, J. D.; Gedvilas, L. M.; Olson, M. R.; Wu, X.; Duda, A.; Wanlass, M. W.; Jones, K. M.

    1998-10-28T23:59:59.000Z

    Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Devices incorporating chemical-bath-deposited (CBD) CdS are comparable in quality to devices incorporating purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this paper, we summarize and review the results of Fourier transform infrared (FTIR), Auger, electron microprobe, and X-ray photoelectron spectroscopic (XPS) analyses of the impurities in CBD CdS films. We show that these impurities differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 102 micron-scale precipitates.

  14. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

    SciTech Connect (OSTI)

    Ok, Kyung-Chul; Park, Jin-Seong, E-mail: hkim-2@naver.com, E-mail: jsparklime@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Ko Park, Sang-Hee; Kim, H., E-mail: hkim-2@naver.com, E-mail: jsparklime@hanyang.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Hwang, Chi-Sun [Transparent Electronics Team, ETRI, Daejeon 305-350 (Korea, Republic of); Soo Shin, Hyun; Bae, Jonguk [LG Display R and D Center, LG Display Co., Ltd., Paju 413-811 (Korea, Republic of)

    2014-02-10T23:59:59.000Z

    We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiN{sub x}/AlO{sub x} buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiN{sub x} or SiO{sub x} buffer layers. The substrates could be bent down to a radius of curvature of 15?mm and the devices remained normally functional.

  15. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  16. Fabrication of an optically driven 10 GHz ring resonator on a gallium arsenide substrate

    E-Print Network [OSTI]

    McGregor, Douglas Scott

    1989-01-01T23:59:59.000Z

    /D converters, optical detectors, dc to rf converters, and millimeter-wave or microwave generators. Photoconductors can be easily integrated with microelectronic devices as well as microwave circuits. Recently, an optically excited photoconductive switch... is the barrier height and y, is the electron affinity for the semiconductor. Current flow at a metal-semiconductor barrier is due mainly to majority carriers. The four major current transport methods are thermionic emission over the barrier, quantum...

  17. Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays

    SciTech Connect (OSTI)

    Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

    2002-01-30T23:59:59.000Z

    High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

  18. Radiolabeled porphyrin versus gallium-67 citrate for the detection of human melanoma in athymic mice

    SciTech Connect (OSTI)

    Maric, N.; Chan, S. Ming; Hoffer, P.B.; Duray, P.

    1987-01-01T23:59:59.000Z

    We performed the biodistribution and imaging studies of /sup 111/In and /sup 67/Ga labeled tetra(4-N-methylpyridyl) porphine, (T4NMPYP), and compared it to that of /sup 67/Ga citrate in athymic mice bearing a human melanoma xenograft. The biodistribution results of both /sup 111/In and /sup 67/Ga labeled T4NMPYP (3, 6, 24, and 48 hours) were similar but differed from that of /sup 67/Ga citrate (48 hours). The optimum tumor uptake of both radiolabeled porphyrins was at 6 hours postinjection and was lower than the tumor uptake of /sup 67/Ga citrate at 48 hours postinjection. Kidney was the only organ showing higher uptake of radiolabeled porphyrin compared to that of /sup 67/Ga citrate. The imaging studies performed with /sup 111/In T4NMPYP and /sup 67/Ga citrate correspond to the biodistribution results. Osteomyelitis present in one mouse showed good localization of /sup 111/In T4NMPYP. 15 refs., 3 figs., 5 tabs.

  19. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

    SciTech Connect (OSTI)

    Esposto, Michele; Krishnamoorthy, Sriram; Nath, Digbijoy N.; Bajaj, Sanyam; Hung, Ting-Hsiang; Rajan, Siddharth

    2011-09-26T23:59:59.000Z

    We report on our investigation of the electrical properties of metal/Al{sub 2}O{sub 3}/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al{sub 2}O{sub 3} films on GaN substrates. The conduction band offset at the Al{sub 2}O{sub 3}/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 x 10{sup 12 }cm{sup -2} at the Al{sub 2}O{sub 3}/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

  20. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01T23:59:59.000Z

    is limited by the cold-wall chamber design and the porousrepeatability. The cold-wall chamber design also limits the

  1. Commercialization of gallium nitride nanorod arrays on silicon for solid-state lighting

    E-Print Network [OSTI]

    Wee, Qixun

    2008-01-01T23:59:59.000Z

    One important component in energy usage is lighting, which is currently dominated by incandescent and fluorescent lamps. However, due to potentially higher efficiencies and thus higher energy savings, solid-state lighting ...

  2. The equilibrium state of hydrogen in gallium nitride: Theory and experiment

    SciTech Connect (OSTI)

    MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; SEAGER,CARLETON H.; WAMPLER,WILLIAM R.; CRAWFORD,MARY H.; HAN,JUNG

    2000-04-17T23:59:59.000Z

    Formation energies and vibrational frequencies for H in wurtzite GaN were calculated from density functional theory and used to predict equilibrium state occupancies and solid solubilities for p-type, intrinsic, and n-type material. The solubility of deuterium (D) was measured at 600--800 C as a function of D{sub 2} pressure and doping and compared with theory. Agreement was obtained by reducing the H formation energies 0.2 eV from ab-initio theoretical values. The predicted stretch-mode frequency for H bound to the Mg acceptor lies 5% above an observed infrared absorption attributed to this complex. It is concluded that currently recognized H states and physical processes account for the equilibrium behavior of H examined in this work.

  3. Diffusion, Uptake and Release of Hydrogen in p-type Gallium Nitride: Theory and Experiment

    SciTech Connect (OSTI)

    MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; WAMPLER,WILLIAM R.; SEAGER,CARLETON H.; CRAWFORD,MARY H.; HAN,JUNG

    2000-06-27T23:59:59.000Z

    The diffusion, uptake, and release of H in p-type GaN are modeled employing state energies from density-function theory and compared with measurements of deuterium uptake and release using nuclear-reaction analysis. Good semiquantitative agreement is found when account is taken of a surface permeation barrier.

  4. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01T23:59:59.000Z

    and Applications, edited by T. M. Tritt, ( Kluwer Academic /and Applications, edited by T. M. Tritt, ( Kluwer Academic /and Applications, edited by T. M. Tritt, ( Kluwer Academic /

  5. SAGE: Solar Neutrino Data from SAGE, the Russian-American Gallium Solar Neutrino Experiment

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    SAGE Collaboration

    SAGE is a solar neutrino experiment based on the reaction 71Ga + n goes to 71Ge + e-. The 71Ge atoms are chemically extracted from a 50-metric ton target of Ga metal and concentrated in a sample of germane gas mixed with xenon. The atoms are then individually counted by observing their decay back to 71Ga in a small proportional counter. The distinguishing feature of the experiment is its ability to detect the low-energy neutrinos from proton-proton fusion. These neutrinos, which are made in the primary reaction that provides the Sun's energy, are the major component of the solar neutrino flux and have not been observed in any other way. To shield the experiment from cosmic rays, it is located deep underground in a specially built facility at the Baksan Neutrino Observatory in the northern Caucasus mountains of Russia. Nearly 100 measurements of the solar neutrino flux have been made during 1990-2000, and their combined result is a neutrino capture rate that is well below the prediction of the Standard Solar Model. The significant suppression of the solar neutrino flux that SAGE and other solar neutrino experiments have observed gives a strong indication for the existence of neutrino oscillations. [copied from the SAGE homepage at http://ewi.npl.washington.edu/SAGE/SAGE.html

  6. Synthesis and optical properties of CsC1-doped gallium-sodium-sulfide glasses

    SciTech Connect (OSTI)

    Hehlen, Markus P [Los Alamos National Laboratory; Bennett, Bryan L [Los Alamos National Laboratory; Williams, Darrick J [Los Alamos National Laboratory; Muenchausen, Ross E [Los Alamos National Laboratory; Castro, Alonso [Los Alamos National Laboratory; Tornga, Stephanie C [Los Alamos National Laboratory

    2009-01-01T23:59:59.000Z

    Ga{sub 2}S{sub 3}-Na{sub 2}S (GNS) glasses doped with CsCl were synthesized in open crucibles under inert atmosphere. The evaporative loss of CsCl during glass melting was measured by energy dispersive X-ray spectroscopy and corrected for by biasing the CsCl concentration in the mixture of starting materials to obtain glasses with accurately controlled stoichiometry. Glass transition temperatures, refractive index dispersions, and band edge energies were measured for four GNS:CsCl glasses, and the respective values were found to significantly improve over earlier studies that did not mitigate CsCl evaporative losses. The refractive index dispersion measurements indicate that the Cs{sup +} and Cl{sup -} radii are 16% larger in GNS:CsCl glass than in bulk crystalline CsCl. The band edge energy increases from 2.97 eV in GNS glass to 3.32 eV in GNS glass doped with 20 mol% CsCl as a result of introducing Cl{sup -} ions having a large optical electronegativity. The large bandgap of 3.32 eV and the low (450 cm{sup -1}) phonon energy make GNS:20%CsCl an attractive host material for rare-earth ions with radiative transitions in the near ultra-violet, visible, and near-infrared spectral regions.

  7. The marine geochemistry of dissolved gallium: A comparison with dissolved aluminum

    SciTech Connect (OSTI)

    Orians, K.J.; Bruland, K.W. (Univ. of California, Santa Cruz (USA))

    1988-12-01T23:59:59.000Z

    Dissolved Ga concentrations in the pacific Ocean range from 2 to 30 picomolar: they are low in surface waters (2-12 pM), with a subsurface maximum at 150-300 m (6-17 pM), a mid-depth minimum from 500 to 1,000 m (4-10 pM) and increasing values with depth to a maximum in the bottom waters (12-30 pM). The highest concentrations are in the central gyre, with lower values toward the north and east where productivity and particle scavenging increase. Dissolved Ga concentrations in the surface waters of the northwest Atlantic are nearly an order of magnitude higher than in the central North pacific, with higher values in the Gulf Stream than in the continental slope boundary region. The vertical distributions and horizontal transects indicate three sources of dissolved Ga to the oceans. The surface distribution reflects an eolian source with no net fluvial input to the open ocean; the subsurface maximum (a feature not seen for North Pacific dissolved Al) is attributed to vertical exchange processes; the source for the deep waters of the North Pacific is from a sediment surface remineralization process or a pore water flux. Scavenging removal throughout the water column is evident in the vertical profiles for both dissolved Ga and Al, with intensified removal in the boundary regions where productivity and particle scavenging are at a maximum. Residence times of dissolved Ga in surface waters are nearly an order of magnitude longer than the corresponding values for Al.

  8. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01T23:59:59.000Z

    process: after sample pair wax wetting. .. 311 Figureprocess: after PMGI and wax dissolution and composite1. Picture of an example wax wetting two microscope slide

  9. Tungsten-incorporation induced red-shift in the bandgap of gallium oxide thin films

    SciTech Connect (OSTI)

    Rubio, E. J.; Ramana, C. V. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)] [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

    2013-05-13T23:59:59.000Z

    Tungsten (W) incorporated Ga{sub 2}O{sub 3} films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. The structure and optical properties of W-incorporated Ga{sub 2}O{sub 3} films were evaluated using X-ray diffraction, scanning electron microscopy, and spectrophotometric measurements. No secondary phase formation was observed in W-incorporated Ga{sub 2}O{sub 3} films. W-induced effects were significant on the structure and optical properties of Ga{sub 2}O{sub 3} films. The bandgap of Ga{sub 2}O{sub 3} films without W-incorporation was {approx}5 eV. Red-shift in the bandgap was noted with increasing W-concentration indicating the electronic structure changes in W-Ga{sub 2}O{sub 3} films. A functional relationship between W-concentration and optical property is discussed.

  10. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01T23:59:59.000Z

    4240 OUTPUT 708;"B12X" ! turns TEG-1 bubbler off 4250 OUTPUT708;"B8X" ! turns TEG-2,3 bubbler off 4260 OUTPUT 708;"OUTPUT 709;"B11X" ! turns TEG-1 out off OUTPUT 709;"B7X" !

  11. The determination of titanium, germanium and gallium by charged particle activation analysis

    E-Print Network [OSTI]

    Novak, Leo Robert

    1975-01-01T23:59:59.000Z

    . 3 hz 0. 559 3. 008 -13. 540 5. 143 2. 859 -11. 529 9. 0 x 10 5 1. 10 x 10 5 9. 31 x 10 5 1. 35 x 10 5 1. 17 x 10 5 70 69 Ge (p, pn) Ge 74 11 se(p, o) As 76 72 Se(p, an) As -11. 529 ' 0. 545 10. 245 a) dps per NA for 1 minute.... 85 x 10 74 Se(d, nn) As 71 1. 680 Ge(6, 2n) As 72 26. 0 hr . 834 7. 367 2. 86 x 10 746 (0 ) 72A 6. 718 "Ge(d. n) ' As Ge (d, 2n) As 17. 76 d . 596 6. 176 - 5. 570 2. 72 x 10 As(d, dn) As -10. 248 a) dps per VA for 1 minute irradietions, natural...

  12. The Hall mobility measurement of Liquid Phase Epitaxy grown aluminum gallium arsenide

    E-Print Network [OSTI]

    Choi, Young-Shig

    1986-01-01T23:59:59.000Z

    -type AJGaAs mobility as a function of doping concentration with temperature as a, parameter. . 51 CHAPTER I INTRODUCTION AI?Ga& ?As (x is the mole fraction of Al) has been employed to fabricate discrete Light Emitting Diodes (LED) and Laser Diodes... grown l&y 1. PE are the lasers and light, -emitting diodes, 2, 31. 10 One limitation of the LPE technique is the difficulty of growing layers that differ in lattice constant by more than lv/& from the substrate. Lattice mismatch, occuring whenever...

  13. Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

    SciTech Connect (OSTI)

    Li, Liuan; Kishi, Akinori; Shiraishi, Takayuki; Jiang, Ying; Wang, Qingpeng; Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506 (Japan)

    2014-03-15T23:59:59.000Z

    This study evaluates the thermal stability of different refractory metal nitrides used as Schottky electrodes on GaN. The results demonstrate that TiN, MoSiN, and MoN possess good rectification and adhesion strength, with barrier heights of 0.56, 0.54, and 0.36?eV, respectively. After thermal treatment at 850?°C for 1?min, the TiN and MoN electrodes still exhibit rectifying characteristics, while the MoSiN degrades to an ohmic-like contact. For further study, several TiN films are deposited using different N{sub 2}/Ar reactive/inert sputtering gas ratios, thereby varying the nitrogen content present in the sputtering gas. Ohmic-like contact is observed with the pure Ti contact film, and Schottky characteristics are observed with the samples possessing nitrogen in the film. The average Schottky barrier height is about 0.5?eV and remains virtually constant with varying nitrogen deposition content. After examining Raman spectra and x-ray photoelectron spectroscopy results, the increase in the film resistivity after thermal treatment is attributed to oxidation and/or nitridation. Films deposited with a medium (40% and 60%) nitrogen content show the best film quality and thermal stability.

  14. Gallium-68 Bioorthogonal Tetrazine Polymers for the Multistep Labeling of Cancer Biomarkers /

    E-Print Network [OSTI]

    Nichols, Brandon Edward

    2013-01-01T23:59:59.000Z

    68 somatostatin receptor PET/CT: is it time to replace (111)mapping of the prostate using PET/CT fusion imaging and Ga-

  15. Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

    SciTech Connect (OSTI)

    Chin, Hock-Chun; Gong, Xiao; Yeo, Yee-Chia [Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576 (Singapore); Ng, Tien Khee; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt [School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Nanyang Avenue, Singapore 639798 (Singapore); Wong, Choun Pei; Shen, Zexiang [Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University (NTU), Singapore 637371 (Singapore)

    2010-07-15T23:59:59.000Z

    Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-element simulation. It is shown that nanostructures can provide additional substrate compliance for strain relief and therefore contribute to the formation of defect-free GaAs on SiGe. Extensive characterization using scanning electron microscopy and cross-sectional transmission electron microscopy was performed to illustrate the successful growth of GaAs on SiGe nanowire. Raman and Auger electron spectroscopy measurements further confirmed the quality of the GaAs grown and the high growth selectivity of the MEE process.

  16. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01T23:59:59.000Z

    lasers utilizing an InGaP etch-stop layer,” Semiconductor1992). Cirtic acid GaAs from InGaP: D. Arslan, A. Dehé, and1999). Hydrochloric acid InGaP from GaAs: J. R. Lothian, J.

  17. Radiation-Hardened Gallium Nitride Detector and Arrays for Fusion Diagnostics

    SciTech Connect (OSTI)

    Sun, K. X., and MacNeil, L.

    2011-09-08T23:59:59.000Z

    This poster reports testing to confirm that GaN devices exhibit the extreme radiation hardness needed for use at the NIF, functioning properly after 1x10{sup 12} protons/cm{sup 2} proton irradiation in one year.

  18. X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy

    SciTech Connect (OSTI)

    Rogozin, I. V. [Berdyansk State Pedagogical University (Ukraine)], E-mail: rogozin@bdpu.org; Kotlyarevsky, M. B. [Academy of Management and Information Technology (Ukraine)

    2007-05-15T23:59:59.000Z

    Thin GaN films were grown on GaAs(111) substrates by radical-beam gettering epitaxy. The structural quality of the films was studied by high-resolution x-ray diffraction. The chemical composition of the GaAs surface and GaN film was studied by x-ray photoelectron spectroscopy. It is shown that Ga-N and As-N bonds are formed on the GaAs surface at initial growth stages at low temperatures. The state of the film-substrate interface was studied. It was found that prolonged annealing of GaN films in nitrogen radicals shifts the composition to nitrogen excess.

  19. Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate 

    E-Print Network [OSTI]

    Yeh, Chun-Liang

    1993-01-01T23:59:59.000Z

    the frequency ~, = urn' +amoco) have been observed. In the third part of the optical tests, the degenerate parametric amplification of an optical signal RF modulated at the first mode of the resonator with a microwave pumping LO at second mode... for the ring resonator. 77 46 Mixing Test Setup. 79 47 The sum signal IF, for the linear resonator with 10 prn coupling gap. The RF signal is at 4. 875 GHz and the I, O signal is at 4. 750 GHz, where the IF, signal (users = ans + uiqo) is detected at 9. 624...

  20. Gallium Arsenide-Based Readout Electronics Thomas J. Cunningham and Eric R. Fossum

    E-Print Network [OSTI]

    Fossum, Eric R.

    susceptible to radiation and hot carrier damage than are MaS-based structures. This should result in increased;among these has been the construction of optical emitters such as LEDs and lasers, since efficient

  1. Gallium arsenide-based ternary compounds and multi-band-gap solar cell research

    SciTech Connect (OSTI)

    Vernon, S. (Spire Corp., Bedford, MA (United States))

    1993-02-01T23:59:59.000Z

    Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

  2. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01T23:59:59.000Z

    affect the Ni heater photolithography step, but with properstep impulse current is driven through a monolithic heater

  3. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy ChinaofSchaefer To:Department of EnergySeacrist, Senior Fellow - Emerging Technologies

  4. High-Quality, Low-Cost Bulk Gallium Nitride Substrates | Department of

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy ChinaofSchaefer To:Department of EnergySeacrist, SeniorVolume 6 Building

  5. Sandia Energy - BES Web Highlight: Single-mode gallium nitride nanowire

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's PossibleRadiation Protection245C Unlimited ReleaseWelcome ton6Andy

  6. Gallium Safety in the Laboratory INEEL/CON-03-00078

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem Not Found Item Not Found The itemAIR57451DOE/SC0002390dV DOE/m/10412 - 6 PROGWM:This

  7. Electronic transport in graphene-based heterostructures

    SciTech Connect (OSTI)

    Tan, J. Y.; Avsar, A.; Balakrishnan, J.; Taychatanapat, T.; O'Farrell, E. C. T.; Eda, G.; Castro Neto, A. H. [Graphene Research Center, National University of Singapore, Singapore 117542 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Koon, G. K. W.; Özyilmaz, B., E-mail: barbaros@nus.edu.sg [Graphene Research Center, National University of Singapore, Singapore 117542 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); NanoCore, National University of Singapore, Singapore 117576 (Singapore); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-05-05T23:59:59.000Z

    While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS{sub 2}) and molybdenum disulfide (MoS{sub 2})) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ?0.1?nm) compared to conventional SiO{sub 2} substrate. While our results confirm that graphene devices exhibit very high electronic mobility (?) on BN substrates, graphene devices on WS{sub 2} substrates (G/WS{sub 2}) are equally promising for high quality electronic transport (????38?000 cm{sup 2}/V s at room temperature), followed by G/MoS{sub 2} (????10?000 cm{sup 2}/V s) and G/GaSe (????2200 cm{sup 2}/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS{sub 2} and G/MoS{sub 2} heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

  8. Fabrication and testing of diamond-machined gratings in ZnSe, GaP, and bismuth germanate for the near infrared and visible

    SciTech Connect (OSTI)

    Kuzmenko, P J; Little, S L; Ikeda, Y; Kobayashi, N

    2008-06-22T23:59:59.000Z

    High quality immersion gratings for infrared applications have been demonstrated in silicon and germanium. To extend this technology to shorter wavelengths other materials must be investigated. We selected three materials, zinc selenide, gallium phosphide and bismuth germanate (Bi{sub 4}Ge{sub 3}O{sub 12}), based on high refractive index, good visible transmission and commercial availability in useful sizes. Crystal samples were diamond turned on an ultra-precision lathe to identify preferred cutting directions. Using this information we diamond-flycut test gratings over a range of feed rates to determine the optimal cutting conditions. For both ZnSe and GaP good surface quality was achieved at feed rates up to 1.0 cm/minute using a special compound angle diamond tool with negative rake angles on both cutting surfaces. The surface roughness of the groove facets was about 4 nm. A Zygo interferometer measured grating wavefront errors in reflection. For the ZnSe the RMS error was < {lambda}/20 at 633nm. More extensive testing was performed with a HeNe laser source and a cooled CCD camera. These measurements demonstrated high relative diffraction efficiency (> 80%), low random groove error (2.0 nm rms), and Rowland ghost intensities at < 0.1%. Preliminary tests on bismuth germanate show high tool wear.

  9. Ternary chalcogenide-based photoelectrochemical cells V. Surface analyses of the CuInX/sub 2//aqueous polysulfide interface (X = S, Se) by X-Ray photoelectron spectroscopy; absence of Se/S exchange in the CuInSe/sub 2//S /SUB n/ = system

    SciTech Connect (OSTI)

    Mirovsky, Y.; Cahen, D.; Polak, M.; Sawatzky, G.; Tenner, R.

    1985-05-01T23:59:59.000Z

    n-CuInS/sub 2/ and n-CuInSe/sub 2/ were subjected to surface analyses by x-ray photoelectron and Auger electron spectroscopy, after their use as photoanodes in polysulfide solutions. For CuInS/sub 2/ samples that had a poor (ca. 2%) conversion efficiency, a rather heterogeneous surface was found, with patches rich in In, which is probably present mainly as oxide. Some CuO was found as well, although the top layer was depleted in Cu, compared to a reference sample. More efficient (ca. 5%) samples showed a more homogeneous surface and even stronger Cu depletion. These changes are ascribed to additional surface treatments, viz., dipping in hot KCN solution and thermal oxidation o the resultant etched surface. For CuInSe/sub 2/ samples, no significant exchange of lattice Se by S from the polysulfide solution is seen, in sharp contrast to what is observed for CdSe or CdIn/sub 2/Se/sub 4/. If sulfur is found, its presence could be correlated with the spurious occurrence of Cd (used as dopant) or Ag (used for the ohmic back contact). Cu depletion also occur near the surface of the diselenide after use in polysulfide solution. Most of the remaining In seems to occur in indiu oxide and/or indium selenide. Cu/sub 2/ was found neither here nor on the surface of the more efficient disulfide sample. It is suggested that the occurrence of an indium oxide top layer, aided by thermal oxidation of the electrode in the case o CuInSe/sub 2/, has a beneficial effect on electrode performance.

  10. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

  11. Naval Research Laboratory`s programs in advanced indium phosphide solar cell development

    SciTech Connect (OSTI)

    Summers, G.P.

    1995-10-01T23:59:59.000Z

    The Naval Research Laboratory has been involved in developing InP solar cell technology since 1988. The purpose of these programs was to produce advanced cells for use in very high radiation environments, either as a result of operating satellites in the Van Allen belts or for very long duration missions in other orbits. Richard Statler was technical representative on the first program, with Spire Corporation as the contractor, which eventually produced several hundred, high efficiency 2 x 2 sq cm single crystal InP cells. The shallow homojunction technology which was developed in this program enabled cells to be made with AMO, one sun efficiencies greater than 19%. Many of these cells have been flown on space experiments, including PASP Plus, which have confirmed the high radiation resistance of InP cells. NRL has also published widely on the radiation response of these cells and also on radiation-induced defect levels detected by DLTS, especially the work of Rob Walters and Scott Messenger. In 1990 NRL began another Navy-sponsored program with Tim Coutts and Mark Wanlass at the National Renewable Energy Laboratory (NREL), to develop a one sun, two terminal space version of the InP-InGaAs tandem junction cell being investigated at NREL for terrestrial applications. These cells were grown on InP substrates. Several cells with AMO, one sun efficiencies greater than 22% were produced. Two 2 x 2 sq cm cells were incorporated on the STRV lA/B solar cell experiment. These were the only two junction, tandem cells on the STRV experiment. The high cost and relative brittleness of InP wafers meant that if InP cell technology were to become a viable space power source, the superior radiation resistance of InP would have to be combined with a cheaper and more robust substrate. The main technical challenge was to overcome the effect of the dislocations produced by the lattice mismatch at the interface of the two materials.

  12. Fabrication of indium sulfide nanofibers via a hydrothermal method assisted by AAO template

    SciTech Connect (OSTI)

    Zhu Xiaoyi [Institute of Material Science and Engineering, Ocean University of China, Qingdao 266003 (China); Ma Junfeng [Institute of Material Science and Engineering, Ocean University of China, Qingdao 266003 (China) and College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266003 (China)]. E-mail: majf@mail.ouc.edu.cn; Wang Yonggang [Institute of Material Science and Engineering, Ocean University of China, Qingdao 266003 (China); Tao Jiantao [Institute of Material Science and Engineering, Ocean University of China, Qingdao 266003 (China); Zhou Jun [College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266003 (China); Zhao Zhongqiang [College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266003 (China); Xie Lijin [College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266003 (China); Tian Hua [College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266003 (China)

    2006-08-10T23:59:59.000Z

    {beta}-In{sub 2}S{sub 3} nanofibers were successfully synthesized via a hydrothermal method with AAO membrane as a template at 150 deg. C for 15 h. XRD patterns indicated the perfect crystallization of {beta}-In{sub 2}S{sub 3}. SEM images showed that the {beta}-In{sub 2}S{sub 3} nanofibers grew up from the channel ends of the AAO template. TEM images confirmed that the nanofibers had a high aspect ratio of ca. 40-50 and diameters of about 10 nm. The room temperature photoluminescence (PL) spectrum of the {beta}-In{sub 2}S{sub 3} nanofibers indicated its potential applications in light-emission devices.

  13. In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    of a precursor gas (e.g., SiH4) at the surface of metallic catalyst droplets, the diffusion of constituent atoms (e.g., Si) in the droplets, and their precipitation at an interface. Fast diffusion is required. It is entirely run under vacuum in one single capacitively coupled, radio-frequency (RF) PECVD reactor. The base

  14. High thermoelectric performance by resonant dopant indium in nanostructured SnTe

    E-Print Network [OSTI]

    Liao, Bolin

    From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this ...

  15. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Yang, “Solution-processed core-shell nanowires for efficientYong, “Fabrication of ZnO/CdS core/shell nanowire arrays fornew fabrication method for core-shell nanopillar array solar

  16. An investigation of the cadmium absorption of resonance neutrons in cadmium covered indium foils

    E-Print Network [OSTI]

    Powell, James Edward

    1963-01-01T23:59:59.000Z

    Thicknesses and Cadmium Covers Page 25 II Fcd Determined by E3 and Logarithmic Fits for Various Foil Thickness 29 III Experimental Values of Fcd for Various Foil Thicknesses and Cadmium Covers 32 LIST OF FIGURES No. Title Bare Infinite Disk Showing... The Coordinates g and B Cadmium Covered Infinite Disk Indicating the Directions X and 8 . Page Theoretically Determine)Bare and Cadmium Covered Activity of a 18. 5 mg/cm Foil. Theoretically Determined Bare and Cadmium Covered Activities of a 184. 5 mg/cm2...

  17. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    for the improvement of CdTe solar cells,” Solar EnergySolar Energy Materials and Solar Cells, vol. 93, no. 4, pp.Materials and Solar Cells, vol. 95, no. 3, pp. 816–820, Mar.

  18. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1997-03-04T23:59:59.000Z

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, the balance of the ITO being insulative. The device is made by the following general steps: (a) providing a substrate having a conductive ITO coating on at least one surface thereof; (b) rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  19. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, T.E.

    1996-12-03T23:59:59.000Z

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway. 8 figs.

  20. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1996-01-01T23:59:59.000Z

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  1. Method of forming electrical pathways in indium-tin-oxide coatings

    DOE Patents [OSTI]

    Haynes, Tony E. (Knoxville, TN)

    1997-01-01T23:59:59.000Z

    An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

  2. The Structure and Properties of Amorphous Indium Oxide D. Bruce Buchholz,

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature structure for TCOs and TOSs is a network of MOx polyhedra. Each metal ion

  3. The role of correlation entropy in nuclear fusion in liquid lithium, indium and mercury

    E-Print Network [OSTI]

    Coraddu, M; Quarati, P; Scarfone, A M

    2015-01-01T23:59:59.000Z

    Nuclear fusion cross-sections considerably higher than corresponding theoretical predictions are observed in low-energy experiments with metal matrix targets and accelerated deuteron beams. The cross-section increment is significantly higher for liquid than for solid targets. We propose that the same two-body correlation entropy used in evaluating the metal melting entropy explains the large liquid-solid difference of the effective screening potential that parameterizes the cross-section increment. This approach is applied to the specific case of the $^6$Li(d,$\\alpha$)$^4$He reaction, whose measured screening potential liquid-solid difference is $(235 \\pm 63)$ eV. Cross sections in the two metals with the highest two-body correlation entropy (In and Hg) have not yet been measured: increments of the cross sections in liquid relative to the ones in solid metals are estimated with the same procedure.

  4. Indium phosphide based integrated photonic devices for telecommunications and sensing applications

    E-Print Network [OSTI]

    Shih, Ta-Ming, Ph. D. Massachusetts Institute of Technology

    2012-01-01T23:59:59.000Z

    Photonics is an exciting area of study that is situated at the cross-section of physics, material science, and electrical engineering. The integration of photonic devices serves to reduce the size, weight, power consumption, ...

  5. Photoelectrochemistry in particulate systems. 7. Electron-transfer reactions of indium sulfide semiconductor colloids

    SciTech Connect (OSTI)

    Kamat, P.V.; Dimitrijevic, N.M.; Fessenden, R.W.

    1988-04-21T23:59:59.000Z

    Small semiconductor colloids of In/sub 2/S/sub 3/ have been prepared in aqueous and nonaqueous media and their absorption properties characterized. A transient photobleaching and formation of S/sup .-/ and S/sub 2/H/sub 2//sup .-/ radicals have been observed upon laser pulse (355 nm) excitation of these colloids. With the aid of transient absorption spectra, the anodic corrosion process in these semiconductor colloids has been elucidated by using laser flash photolysis and pulse radiolysis techniques. With the use of a zwitterionic viologen compound, the interfacial charge-transfer process at the semiconductor surface has been studied. The quantum yield for the reduction of zwitterionic viologen was 0.07, which is similar to the value obtained with other metal chalcogenide semiconductor colloids. The microenvironment of the stabilizer (Nafion) influenced the charge-transfer process between the semiconductor and the redox decay.

  6. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    the other hand, large solar plants are also achievable and5 million modules, the solar plant covers over 5200 acres of

  7. INDIUM--2003 36.1 References that include a section mark () are found in the Internet

    E-Print Network [OSTI]

    . Crews, statistical assistant, and the world production table was prepared by Glenn J. Wallace energy savings, various national governments have targeted solid-state technologies, which include light-emitting diodes (LEDs), for increased research funding and development. A proposal for a program to fund solid

  8. Indium-Vanadium Oxides Deposited by Radio Frequency Sputtering: New Thin Film Transparent

    E-Print Network [OSTI]

    Artuso, Florinda

    in order to determine their possible applications in electrochromic devices as optically passive ion-vis-NIR transmittance and reflectance modes, have demonstrated that films are electrochromic, but the presence in electrochromic devices (ECD) with variable light transmission ("smart windows").2,3 As has been demonstrated

  9. The role of correlation entropy in nuclear fusion in liquid lithium, indium and mercury

    E-Print Network [OSTI]

    M. Coraddu; M. Lissia; P. Quarati; A. M. Scarfone

    2015-01-19T23:59:59.000Z

    Nuclear fusion cross-sections considerably higher than corresponding theoretical predictions are observed in low-energy experiments with metal matrix targets and accelerated deuteron beams. The cross-section increment is significantly higher for liquid than for solid targets. We propose that the same two-body correlation entropy used in evaluating the metal melting entropy explains the large liquid-solid difference of the effective screening potential that parameterizes the cross-section increment. This approach is applied to the specific case of the $^6$Li(d,$\\alpha$)$^4$He reaction, whose measured screening potential liquid-solid difference is $(235 \\pm 63)$ eV. Cross sections in the two metals with the highest two-body correlation entropy (In and Hg) have not yet been measured: increments of the cross sections in liquid relative to the ones in solid metals are estimated with the same procedure.

  10. Lithium inclusion in indium metal-organic frameworks showing increased surface area and hydrogen adsorption

    SciTech Connect (OSTI)

    Bosch, Mathieu; Zhang, Muwei; Feng, Dawei; Yuan, Shuai; Wang, Xuan [Department of Chemistry, Texas A and M University, College Station, Texas 77842 (United States); Chen, Ying-Pin [Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77842 (United States); Zhou, Hong-Cai, E-mail: zhou@mail.chem.tamu.edu [Department of Chemistry, Texas A and M University, College Station, Texas 77842 (United States); Department of Materials Science and Engineering, Texas A and M University, College Station, Texas 77842 (United States)

    2014-12-01T23:59:59.000Z

    Investigation of counterion exchange in two anionic In-Metal-Organic Frameworks (In-MOFs) showed that partial replacement of disordered ammonium cations was achieved through the pre-synthetic addition of LiOH to the reaction mixture. This resulted in a surface area increase of over 1600% in (Li [In(1,3 ? BDC){sub 2}]){sub n} and enhancement of the H{sub 2} uptake of approximately 275% at 80?000 Pa at 77 K. This method resulted in frameworks with permanent lithium content after repeated solvent exchange as confirmed by inductively coupled plasma mass spectrometry. Lithium counterion replacement appears to increase porosity after activation through replacement of bulkier, softer counterions and demonstrates tuning of pore size and properties in MOFs.

  11. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    for efficient photovoltaic cells. ,” Nature Nanotechnology,Part II – Photovoltaic Cell I-V Characterization Theory andof the photovoltaic effect in the 19 th century, solar cells

  12. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    open circuit voltage, short circuit current density and fillwithin circuitry, a short-circuit current (I SC ) can beproduct of the short-circuit current and the open-circuit

  13. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16T23:59:59.000Z

    and light-emitting diodes). For these electronic devices, transporting electrons to and from the electrode layer is required. In many cases, this electrode must transmit visible light because it is applied directly onto the surface of a transparent...

  14. Highly transparent Nb-doped indium oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Jun Ho; Seong, Tae-Yeon [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Na, Seok-In [Professional Graduate School of Flexible and Printable Electronics, Chonbuk National University, 664-14, Deokjin-dong, Jeongju-si, Jellabuk-do 561-756 (Korea, Republic of); Chung, Kwun-Bum [Department of Physics, Dankook University, Mt. 29, Anseo-Dong, Chenan 330-714 (Korea, Republic of); Lee, Hye-Min; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong, Yongin, Gyeonggi-do 446-701 (Korea, Republic of)

    2014-03-15T23:59:59.000Z

    The authors investigated the characteristics of Nb-doped In{sub 2}O{sub 3} (INbO) films prepared by co-sputtering of Nb{sub 2}O{sub 5} and In{sub 2}O{sub 3} for use in transparent anodes for organic solar cells (OSCs). To optimize the Nb dopant composition in the In{sub 2}O{sub 3} matrix, the effect of the Nb doping power on the resistivity and transparency of the INbO films were examined. The electronic structure and microstructure of the INbO films were also investigated using synchrotron x-ray absorption spectroscopy and x-ray diffraction examinations in detail. At the optimized Nb co-sputtering power of 30?W, the INbO film exhibited a sheet resistance of 15??/sq, and an optical transmittance of 86.04% at 550?nm, which are highly acceptable for the use as transparent electrodes in the fabrication of OSCs. More importantly, the comparable power conversion efficiency (3.34%) of the OSC with an INbO anode with that (3.31%) of an OSC with a commercial ITO anode indicates that INbO films are promising as a transparent electrode for high performance OSCs.

  15. Phase Relationships and Physical Properties of Homologous Compounds in the Zinc OxideIndium Oxide System

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    , are widely used as transparent electrodes for flat panel displays and solar cells. Commercial, thin-film tin

  16. Variable-Temperature Electrical Measurements of Zinc Oxide/Tin Oxide-Cosubstituted Indium Oxide

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    as transparent electrodes in solar cells, flat panel displays, and many other applications. The commercial TCO: Flat Panel Display Mater. Large Area Processes 1998, 508, 308. (4) Minami, T.; Takata, S.; Kakumu, T

  17. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs

    E-Print Network [OSTI]

    Pearton, Stephen J.

    .16 These transparent conducting oxides may also be used as electrodes in solar cells and flat-panel

  18. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film)

  19. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film) solar

  20. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    between the maximum output power of the solar cell and theSolar power systems are modular and are readily scalable and versatile. Depending on required output,output power is maximized. The red curve is the I-V of a solar

  1. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  2. Environmental, health and safety issues related to commercializing CuInSe{sub 2}-based photovoltaics

    SciTech Connect (OSTI)

    Eberspacher, C. [UNISUN, Newbury Park, CA (United States); Fthenakis, V.M.; Moskowtiz, P.D. [Brookhaven National Lab., Upton, NY (United States)

    1996-07-01T23:59:59.000Z

    Photovoltaics technology is rapidly evolving towards a new generation of low-cost thin film technologies. One of the most promising materials in this new generation is copper indium selenide (CuInSe{sub 2} or CIS). As with any new material, successful commercialization of CIS photovoltaic (PV) technology will require attention to environmental, health and safety issues, including consideration of the sources, usage, and end-of-product-life disposal and/or recycling of the constituent materials. This work focuses on three specific environmental, health and safety (EH and S) issues related to CIS PV: (1) economics are analyzed to determine their impact on materials use and re-use; (2) Federal and California State environmental disposal and waste handling regulations are analyzed to evaluate their impact on PV module manufacturing and end-of-life module handling; and (3) the logistics and economics of product recycling and waste disposal by industries with comparable EH and S issues are examined to quantify the corresponding options available for handling, disposing of and/or recycling manufacturing by-products and end-of-life modules.

  3. IEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org/semiconductors/materials/thinfilm-trick-makes-gallium-arsenide-devices-cheap[5/22/2010 1:39:13 PM

    E-Print Network [OSTI]

    Rogers, John A.

    to build devices--including solar cells and infrared cameras--using highly efficient but notoriously pricey's energy into electricity, while silicon cells max out at about 20 percent efficiency. The problem Electronics for Smart Grid Technologies &... Available... Reducing Physical Verification Cycle Times Available

  4. The radiation bio-effects of gallum-72 on leukemic cells via a gallium-transferrin complex

    E-Print Network [OSTI]

    Forbes, Christen Douglas

    1999-01-01T23:59:59.000Z

    Improved methods for treatment of leukemia would be advantageous for patients and the medical community. This thesis reports results of a study of the cytotoxicity of radiolabeled transferrin in cultured leukemic cells. K-562 cells, from...

  5. DESIGN AND ANALYSIS OF AN INTEGRATED PULSE MODULATED S-BAND POWER AMPLIFIER IN GALLIUM NITRIDE PROCESS

    SciTech Connect (OSTI)

    STEVE SEDLOCK

    2012-04-04T23:59:59.000Z

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  6. Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide ,,001... M. J. Begarney,1

    E-Print Network [OSTI]

    Li, Lian

    rough quali- tative agreement with the experimental data. Based on more recent, first, University of California, Los Angeles, California 90095 2 Department of Physics and Laboratory for Surface closely match the RDS data, discrepancies in the energies and mag- nitudes of spectral features remain

  7. The design, construction, and testing of a nuclear fuel rod thermal simulation system to study gallium/Zircaloy interactions 

    E-Print Network [OSTI]

    Allison, Christopher Curtis

    1999-01-01T23:59:59.000Z

    ) fuel rods. The system uses electrically heated simulated fuel rods inside of a large, natural convection heat exchanger that uses lead-bismuth eutectic (LBE) (45 fluid. The simulated rods consist of small diameter...

  8. Thin films of gallium arsenide on low-cost substrates. Final technical report, July 5, 1976-December 5, 1978

    SciTech Connect (OSTI)

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Johnson, R.E.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.

    1980-03-01T23:59:59.000Z

    The MO-CVD technique was applied to the growth of thin films of GaAs and GaAl As on inexpensive polycrystalline or amorphous substrate materials (primarily glasses and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium, arsine, and trimethylaluminum are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperatures of 700 to 750/sup 0/C, to produce the desired film composition and properties. Studies of the properties of grain boundaries in polycrystalline GaAs films by the use of transport measurements as a function of temperature indicated that the grain boundary regions are depleted of majority carriers by a large density of neutral traps at the grain boundary interface, causing a barrier to majority carrier flow in the material. Schottky-barrier solar cells of approx. 3 percent efficiency (simulated AM0 illumination, no AR coating) were demonstrated on thin-film polycrystalline GaAs n/n/sup +/ structures on Mo sheet, Mo film/glass, and graphite substrates. Substantial enhancement of average grain size in polycrystalline MO-CVD GaAs films on Mo sheet was obtained by the addition of HCl to the growth atmosphere during deposition. Extensive investigation of polycrystalline thin-film p-n junctions indicated that the forward voltage of such devices is apparently limited to 0.5 to 0.6V. A laboratory-type deposition apparatus for the formation of TiO/sub 2/ antireflection (AR) coatings by pyrolysis of titanium isopropoxide was assembled and tested. Detailed analyses were made of the materials and labor costs involved in the laboratory-scale fabrication of MO-CVD thin-film GaAs solar cells. Details are presented. (WHK)

  9. The overexpression of NADPH-producing enzymes counters the oxidative stress evoked by gallium, an iron mimetic

    E-Print Network [OSTI]

    Appanna, Vasu

    ), an iron (Fe) mimetic promoted an oxidative environment and elicited an antioxidative response shown to result in unregu- lated ROS production (Huang 2003). For instance, the amyloid b-peptide

  10. Velocity distribution function of sputtered gallium atoms during inductively coupled argon plasma treatment of a GaAs surface

    SciTech Connect (OSTI)

    Despiau-Pujo, Emilie; Chabert, Pascal; Ramos, Raphaeel; Cunge, Gilles; Sadeghi, Nader [Laboratoire de Physique des Plasmas, Ecole Polytechnique, 91128 Palaiseau (France); Laboratoire des Technologies de la Microelectronique, CNRS, 38054 Grenoble (France)

    2009-03-15T23:59:59.000Z

    A GaN laser diode at 403.3 nm is used to measure the velocity distribution function (vdf) of Ga atoms sputtered from a radio-frequency biased GaAs substrate in a low pressure inductively coupled plasma (ICP) argon discharge. To investigate both perpendicular (V{sub z} normal to wafer) and longitudinal (V{sub x} parallel to wafer) velocity components, laser induced fluorescence (LIF) measurements are performed in the z direction and atomic absorption spectroscopy (AAS) in the x direction. The longitudinal vdf of Ga sputtered atoms is very close to a Lorentzian function with V{sub x} comprised between 0 and 7500 m s{sup -1}, while the perpendicular velocities V{sub z} can reach 10 000 m s{sup -1}. Experimental results are compared to molecular dynamics (MD) simulations of Ar{sup +} ion sputtering of GaAs under 200 eV bombardment. MD predictions and experiments are in fairly good agreement, which confirms the existence of products sputtered from the surface with kinetic energies larger than 10 eV. In etching processes dominated by physical bombardment, these energetic atoms could alter passivation layers on sidewalls and be responsible for defects observed in nanodevices. The best fit of the Doppler-broadened LIF and AAS profiles with the vdfs predicted by sputtering theory allows one to estimate the surface binding energy of Ga atoms in GaAs, E{sub b}, to be around 3 eV.

  11. Neutralization by Metal Ions of the Toxicity of Sodium Marc Dauplais, Myriam Lazard, Sylvain Blanquet, Pierre Plateau*

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    selenide mixtures were systematically studied using the death rate of Saccharomyces cerevisiae cells. Cobine, Auburn University, United States of America Received October 1, 2012; Accepted December 12, 2012

  12. P-28 / D. R. Cairns P-28: The Effect of Thermal Shrinkage on Indium Tin Oxide Coated

    E-Print Network [OSTI]

    Cairns, Darran

    reliable flexible substrates. Plastics based conducting electrodes and thin film transistors (TFTs to fabrication of robust devices. For conducting electrode materials there is an additional constraint as compared to TFTs in that the substrate must also have excellent optical properties. PET and polycarbonate

  13. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen [Department of Materials Science and Engineering, National University of Singapore (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research) (Singapore); Yao, Kui, E-mail: k-yao@imre.a-star.edu.sg, E-mail: msewangj@nus.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research) (Singapore); Wang, John, E-mail: k-yao@imre.a-star.edu.sg, E-mail: msewangj@nus.edu.sg [Department of Materials Science and Engineering, National University of Singapore (Singapore)

    2014-10-20T23:59:59.000Z

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  14. EXPLORATION AND DEVELOPMENT OF INDIUM-MEDIATED REACTIONS: SYNTHESIS OF DICHLOROINDIUM HYDRIDE, BORANE, AND THEIR APPLICATION TO VARIOUS REDUCTIONS

    E-Print Network [OSTI]

    Saavedra, Jaime Zendejas

    2012-01-01T23:59:59.000Z

    in the use of amine boranes as hydrogen storage materials. 1under investigation for their hydrogen storage capabilities

  15. Electra-optic and all-optical phase modulator on an indium tin oxide single-mode waveguide

    E-Print Network [OSTI]

    Chen, Ray

    . Chen and D. Robinson Physica! Optics Corporation, 2.545 West 237th Street, Suite B, Torrance of 15% using 250 mW 355 nm UV light as the activation sources. An 1nzOs:Sn waveguide device workingO, films are widely used in solar energy conversion, in optoelectronics, and in other branches

  16. Chromium-Catalyzed Homoaldol Equivalent Reaction, Indium-Mediated Cycloisomerization, and Palladium-Catalyzed Cross-Coupling Reaction

    E-Print Network [OSTI]

    Kang, Jun

    2011-10-21T23:59:59.000Z

    , 0 ?C to rt, 15 h R OH OAc R OH OAc O SM productb a Reagents: VO(acac)2 (2 mol%), adducts 30 (1 mmol), TBHP (5.5 M solution) (2 mmol) in CH2Cl2 at rt for 15 h. b Isolated yield. c dr (syn:anti) was determined by 1H NMR spectroscopy...

  17. Chromium-Catalyzed Homoaldol Equivalent Reaction, Indium-Mediated Cycloisomerization, and Palladium-Catalyzed Cross-Coupling Reaction 

    E-Print Network [OSTI]

    Kang, Jun

    2011-10-21T23:59:59.000Z

    The homoaldol reaction is one of the most powerful methods for the construction of C–C bonds as well as 1,4-oxygenated compounds yet this reaction remains in challenging tasks due to the instability of homoenolates which ...

  18. Nanoscale Electrical Conductivity and Surface Spectroscopic Studies of Indium-Tin Oxide Yish-Hann Liau and Norbert F. Scherer*

    E-Print Network [OSTI]

    Scherer, Norbert F.

    such as flat panel displays, solar cells, and organic electroluminescence devices due to its unique combination

  19. Aluminum Foil Mediated Noncatalytic Growth of ZnO Nanowire Arrays on an Indium Tin Oxide Substrate

    E-Print Network [OSTI]

    Kim, Bongsoo

    substrate would find useful applications in field emission displays and solar cells. Introduction Zinc oxide in optoelectronics such as field emission displays (FEDs) and solar cells.3,4 Developing convenient and reproducible applications because it has been widely used as a transparent electrode in conventional flat panel displays

  20. Self-organization of a new fluorous porphyrin and C60 films on indium-tin-oxide electrodew

    E-Print Network [OSTI]

    Liu, Gang-yu

    ­10 The porphyrin­fullerene com- plexes are appealing as materials for solar-energy conversion and energy storage*ad Received (in Cambridge, UK) 22nd April 2008, Accepted 18th July 2008 First published as an Advance Article of C60 make it an excellent p-acceptor molecule.11 Moreover, because of the small reorganization energy