National Library of Energy BETA

Sample records for implants aerospace fasteners

  1. Electromagnetic fasteners

    DOE Patents [OSTI]

    Crane, Randolph W.; Marts, Donna J.

    1994-01-01

    An electromagnetic fastener for manipulating objects in space uses the matic attraction of various metals. An end effector is attached to a robotic manipulating system having an electromagnet such that when current is supplied to the electromagnet, the object is drawn and affixed to the end effector, and when the current is withheld, the object is released. The object to be manipulated includes a multiplicity of ferromagnetic patches at various locations to provide multiple areas for the effector on the manipulator to become affixed to the object. The ferromagnetic patches are sized relative to the object's geometry and mass.

  2. Electromagnetic fasteners

    DOE Patents [OSTI]

    Crane, Randolph W.; Marts, Donna J.

    1994-11-01

    An electromagnetic fastener for manipulating objects in space uses the matic attraction of various metals. An end effector is attached to a robotic manipulating system having an electromagnet such that when current is supplied to the electromagnet, the object is drawn and affixed to the end effector, and when the current is withheld, the object is released. The object to be manipulated includes a multiplicity of ferromagnetic patches at various locations to provide multiple areas for the effector on the manipulator to become affixed to the object. The ferromagnetic patches are sized relative to the object's geometry and mass.

  3. Separable fastening device

    DOE Patents [OSTI]

    Harvey, Andrew C.; Ribich, William A.; Marinaccio, Paul J.; Sawaf, Bernard E.

    1987-12-01

    A separable fastener system has a first separable member that includes a series of metal hook sheets disposed in stacked relation that defines an array of hook elements on its broad surface. Each hook sheet is a planar metal member of uniform thickness and has a body portion with a series of hook elements formed along one edge of the body. Each hook element includes a stem portion, a deflecting surface portion, and a latch portion. Metal spacer sheets are disposed between the hook sheets and may be varied in thickness and in number to control the density of the hook elements on the broad surface of the first fastener member. The hook and spacer sheets are secured together in stacked relation. A second fastener member has a surface of complementary engaging elements extending along its broad surface which are releasably interengageable with the hook elements of the first fastener member, the deflecting surfaces of the hook elements of the first fastener member tending to deflect hook engaging portions of the second fastener member and the latch portions of the hook elements of the first fastener member engaging portions of the second fastener member in fastening relation.

  4. Self-locking threaded fasteners

    DOE Patents [OSTI]

    Glovan, Ronald J.; Tierney, John C.; McLean, Leroy L.; Johnson, Lawrence L.

    1996-01-01

    A threaded fastener with a shape memory alloy (SMA) coatings on its threads is disclosed. The fastener has special usefulness in high temperature applications where high reliability is important. The SMA coated fastener is threaded into or onto a mating threaded part at room temperature to produce a fastened object. The SMA coating is distorted during the assembly. At elevated temperatures the coating tries to recover its original shape and thereby exerts locking forces on the threads. When the fastened object is returned to room temperature the locking forces dissipate. Consequently the threaded fasteners can be readily disassembled at room temperature but remains securely fastened at high temperatures. A spray technique is disclosed as a particularly useful method of coating of threads of a fastener with a shape memory alloy.

  5. Self-locking threaded fasteners

    DOE Patents [OSTI]

    Glovan, R.J.; Tierney, J.C.; McLean, L.L.; Johnson, L.L.

    1996-01-16

    A threaded fastener with a shape memory alloy (SMA) coatings on its threads is disclosed. The fastener has special usefulness in high temperature applications where high reliability is important. The SMA coated fastener is threaded into or onto a mating threaded part at room temperature to produce a fastened object. The SMA coating is distorted during the assembly. At elevated temperatures the coating tries to recover its original shape and thereby exerts locking forces on the threads. When the fastened object is returned to room temperature the locking forces dissipate. Consequently the threaded fasteners can be readily disassembled at room temperature but remains securely fastened at high temperatures. A spray technique is disclosed as a particularly useful method of coating of threads of a fastener with a shape memory alloy. 13 figs.

  6. Wire brush fastening device

    SciTech Connect (OSTI)

    Meigs, R.A.

    1993-08-31

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus.

  7. Wire brush fastening device

    SciTech Connect (OSTI)

    Meigs, R.A.

    1995-09-19

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

  8. Wire brush fastening device

    SciTech Connect (OSTI)

    Meigs, Richard A.

    1995-01-01

    A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus.

  9. ALL GRADE 5 AND GRADE 8 FASTENERS ...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GRADE 8 FASTENERS WITH THE FOLLOWING MANUFACTURERS' HEADMARKS: MARK KS MARK J (CA TW JP YU... KS KEY: CA-Canada, JP-Japan, TW-Taiwan, YU-Yugoslavia Type 1 Type 2 Type 3 ...

  10. Korea Parts and Fasteners KPF Plextronics JV | Open Energy Information

    Open Energy Info (EERE)

    Parts and Fasteners (KPF) and Plextronics aimed at building a production line for organic photovoltaic panels and a research and development (R&D) center. References: Korea Parts...

  11. Korea Parts and Fasteners KPF | Open Energy Information

    Open Energy Info (EERE)

    KPF Jump to: navigation, search Name: Korea Parts and Fasteners (KPF) Place: Ansan-si, Gyeonggi-do, Korea (Republic) Product: KPF, formerly called Korea Bolt Industries, makes...

  12. Headmark List of Suspect Counterfeit Fasteners 1992 | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon Headmark List of Suspect Counterfeit Fasteners 1992 More Documents & Publications SuspectCounterfeit Items Awareness Training Manual National Historic Preservation Act ...

  13. Nevada Science of Aerospace

    SciTech Connect (OSTI)

    Jason Marcks

    2004-07-01

    Funding was used to operate the educational program entitled the Nevada Science of Aerospace Project.

  14. Success Stories | The Ames Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... for artificial limbs like those used by wounded veterans returning from Iraq and Afghanistan to military vehicle components, biomedical implants, and aerospace fasteners. ...

  15. Integrated Dynamic Electron Solutions, Inc. | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    - like those used by wounded veterans returning from Iraq and Afghanistan - to military vehicle components, biomedical implants, aerospace fasteners and chemical plant valves....

  16. THE AEROSPACE CORPORATION \\

    Office of Legacy Management (LM)

    I, .* THE AEROSPACE CORPORATION Suite 4000, 955 L'Enfant Plaza, S. W., Washington, D.C. 20024, Telephone: (202) 488.6000 7117-01.87.sej.16 28 July 1987 Mr. Andrew Wallo, III,...

  17. THE AEROSPACE CORPORATION '

    Office of Legacy Management (LM)

    q 3 THE AEROSPACE CORPORATION ' Suite 4000, 955 L' Enant Plaza, S. W., Warhington, D.C. 20024, Telephone: (202) 488-6000 7117-01.87.sej.16 28 July 1987 . Mr. Andrew Wallo, III,...

  18. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    . . s ,-- :; 2 5 Y THE AEROSPACE CORPORATION . Suite 4000, 955 L' EnJant Flax. S. Iv., Wah' gt cn on, D.C. 20024-2174, Telephone: (202) 488-6000 7117-03.87.cdy.27 27 May 1987 Mr. Andrew Wallo, III, NE:23 Division of Facility,& Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: STATUS OF ACTIONS - FUSRAP SITE LIST Aerospace recently completed a comprehensive review of sites listed fin the FUSRAP Site Investigation and Remedial Action Summary

  19. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    P;.-. 3 53-y ,' THE AEROSPACE CORPORATION Suite 4000, 955 L' Enfonr Plaza, S. W., Wa.shington, D.C. 20024-2174, Telephone: (202) 488-6000 7117-03.87.cdy.27 27 May 1987 Mr. Andrew Wallo, III, NE:23 Division of Facility & Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: STATUS OF ACTIONS - F&RAP SITE LIST Aerospace recently completed a comprehensive review of sites listed in.the FUSRAP Site Investigation and Remedial Action Summary Report,

  20. THE AEROSPACE CORPORATION '

    Office of Legacy Management (LM)

    q 3 THE AEROSPACE CORPORATION ' \ Suite 4000, 955 L' En/ant Plaza, S. W., Warhington, D.C. 20024, Telephone: (202) 488-6000 7117-01.87.sej.16 28 July 1987 . Mr. Andrew Wallo, III, NE-23 Division of Facility & Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: FINAL ELIMINATION REPORTS AND SITE SUMMARIES Aerospace has completed its review and is forwarding the final elimination reports and site summaries for the following sites: l University of

  1. Career Map: Aerospace Engineer | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Aerospace Engineer Career Map: Aerospace Engineer An aerospace engineer stands in front of a drivetrain testing machine. Aerospace Engineer Position Title Aerospace Engineer Alternate Title(s) Aeronautical Engineer Education & Training Level Advanced, Bachelor's required, prefer graduate degree Education & Training Level Description Aerospace engineers must have a bachelor's degree in aerospace engineering or another field of engineering or science related to aerospace systems. Brief job

  2. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    THE AEROSPACE CORPORATION 20030 Century Blvd., Germanlown, Maryland 20767, Telephone: (301) 428-2700 7848-02.80.eav.34 16 September 1980 m777 Dr. William E. Mott Acting Director Environmental & Safety Engineering Division U. S. Department of Energy Germantown, Maryland 20767 Dear Dr. Mott: - UNIVERSITY OF CHICAGO BUILDINGS USED BY THE MANHATTAN ENGINEER DISTRICT During a recent investigation of the official Manhattan Engineer District history, I came across some additional information that

  3. Unmanned Aerospace Vehicle Workshop

    SciTech Connect (OSTI)

    Vitko, J. Jr.

    1995-04-01

    The Unmanned Aerospace Vehicle (UAV) Workshop concentrated on reviewing and refining the science experiments planned for the UAV Demonstration Flights (UDF) scheduled at the Oklahoma Cloud and Radiation Testbed (CART) in April 1994. These experiments were focused around the following sets of parameters: Clear sky, daylight; Clear-sky, night-to-day transition; Clear sky - improve/validate the accuracy of radiative fluxes derived from satellite-based measurements; Daylight, clouds of opportunity; and, Daylight, broken clouds.

  4. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    .55 LyEnfant Plaro. S.W., Washingzon, D.C. 20024.2174, Telephone: (202) 488-6000 7117-03.87.cdy.27 27 May 1987 Mr. 'Andrew Wallo, III, NE:23 Division of Facility & Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland: 20545 Dear Mr. Wallo: I STATUS OF ACTIONS - FUSRAP SITE LIST Aerospace recently completed .a comprehensive review of sites listed in the FUSRAP Site Investigation and Remedial Action Summary Report, dated Uecember 31, 1986. The primary objectives of this

  5. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    1 . ' . THE AEROSPACE CORPORATION SUMAC 79oOs955 L' En/Mt Ph. S. W., Wahingron. D.C. 200242174, T&jhone (20.?) 48&&700 7117-03.87.cdy.43 23 September 1987 Mr. Andrew Wallo, III, NE-23 Division of Facility & Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES The attached elimination recommendation was prepared in accordance with your suggestion during our meeting on 22

  6. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    53 L' Enfant Plwn. S. W.. W w tn h. go on. D.C. 20024-2174. Telephone: (202) 488.6000 7117-03.87.cdy.27 27 May 1987 Mr. 'Andrew Wallo, III, NE:23 Division of Facility & Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: STATUS OF ACTIOiVS - FUSRAP SITE LIST Aerospace recently completed a comprehensive review of sites listed in the FUSRAP Site Investigation and Remedial Action Summary Report, dated Uecerober 31, 1986. The primary objectives of

  7. German Aerospace Center (DLR) | Open Energy Information

    Open Energy Info (EERE)

    German Aerospace Center (DLR) Name: German Aerospace Center (DLR) Place: Cologne, Germany Number of Employees: 5001-10,000 Website: www.dlr.deendesktopdefault.a Coordinates:...

  8. German Aerospace Center DLR | Open Energy Information

    Open Energy Info (EERE)

    Aerospace Center DLR Jump to: navigation, search Name: German Aerospace Center (DLR) Place: Stuttgart, Germany Zip: 70569 Product: Stuttgart-based, agency that manages the...

  9. An environmental cracking evaluation of fastener materials for seawater applications

    SciTech Connect (OSTI)

    Aylor, D.M.

    1994-12-31

    Slow strain rate tests (SSRT) were conducted on various nickel-base, titanium base, and copper-nickel (Cu-Ni) alloys in order to identify a replacement material for Alloy K-500 in seawater fastener applications. SSRT data and fracture surface analysis of the test specimens identified a susceptibility to environmental cracking in cathodically polarized environments for Alloy K-500, Alloy 625 Plus, and Alloy 625PH. Alloy 625 Plus exhibited slightly increased environmental cracking resistance-at {minus}850 mV vs. SCE over Alloy K-500 and Alloy 625PH. Ti-6Al-4V ELI, Beta C, and Beta 21S titanium displayed no susceptibility to environmental cracking in freely corroding 3.5% NaCl or cathodically polarized conditions. Precharging these titanium alloys for 8 weeks at {minus}1,250 mV vs. SCE did not adversely affect their environmental cracking resistance. The Cu-3Ni and Cu-15Ni-7Sn spray formed alloys exhibited extensive scatter and low measured maximum loads, presumably due to macroporosity present in the as-fabricated material.

  10. Issues surrounding the use of nickel-copper alloy K-500 fasteners in seawater

    SciTech Connect (OSTI)

    Natishan, M.E.; Porr, W.C. Jr.

    1994-12-31

    Nickel-copper alloy K-500 has long been used for the manufacture of fasteners for seawater applications. Alloy K-500 is a nickel-copper solid solution, precipitation strengthened with fine gamma prime precipitates to give it high strength, toughness and good general corrosion resistance. As the use of K-500 has increased in seawater, specifically in seawater tanks protected with anodes, its susceptibility to hydrogen embrittlement has come to light. Several recent failures in air suggest other rate-dependent failures mechanisms for this alloy that must be considered in fastener applications. These failure mechanisms and their interactions will be discussed.

  11. Sandia National Laboratories: Careers: Aerospace Engineering

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Aerospace Engineering Aerospace imagery Sandia's aerospace engineers have provided critical data for the design and analysis of flight vehicles since the 1950s. Aerospace engineers at Sandia support atmospheric and space flight vehicles across the speed regimes, from subsonic to hypersonic, through their collaborative work on multidisciplinary teams. Our aerodynamics and astronautics specialists integrate the results from experiments, analysis, and simulation to solve complex problems of

  12. May 12, 2011, Visiting Speakers Program Events - Aerospace Industry...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Commercial Aerospace Electronics" http:www.dsp.dla.milappuilcontentdocumentsndiaarticle.pdf Unpublished work (2011) Aerospace Industries Association of America, Inc. ...

  13. A bias assessment for in-situ ultrasonic hardness testing of steel fasteners

    SciTech Connect (OSTI)

    Ratiu, M.D.; Moisidis, N.T.

    1996-12-31

    The problem of sub-standard and/or mismarked installed fasteners has received broad attention in quality control standard and largely discussed in technical publications and in public press. The Industrial Fastener Institute (IFI, 1988) released a detailed documented inspection program to ensure the delivery and the usage of appropriate fasteners, imposing mandatory traceability of the manufacturer marking and quality certification reports. For the billions of the existing installed bolts without reliable lot identification and/or quality certification, IFI recommends in-situ control using non-destructive testing and/or hardness measurements with portable testers. The ultrasonic indentation hardness (HU) with the Krautkramer portable tester--operating on the ultrasonic contact impedance method described by Kleesattel (Jankowski D.M., 1990)--is one of the more frequent equipment used in the in-situ control of steel products and machine elements. The advantages of the ultrasonic tester--low weight, direct hardness reading, easy to operate--have determined to be included also for the in-situ control of installed fasteners. However, the bias of this method was not analyzed; the practiced calibration of standard blocks is not conclusive for the comparison of the in-situ measured hardness with the standard reference value obtained using laboratory Rockwell hardness (HR) tester. The purpose of this paper is to point out the specific consistent/systematic differences between HU results and the reference standard HR, which defines the ruggedness and the bias of the ultrasonic method.

  14. MACHINING ELIMINATION THROUGH APPLICATION OF THREAD FORMING FASTENERS IN NET SHAPED CAST HOLES

    SciTech Connect (OSTI)

    Cleaver, Ryan J; Cleaver, Todd H; Talbott, Richard

    2012-05-02

    The ultimate objective of this work was to eliminate approximately 30% of the machining performed in typical automotive engine and transmission plants by using thread forming fasteners in as-cast holes of aluminum and magnesium cast components. The primary issues at the source of engineers reluctance to implementing thread forming fasteners in lightweight castings are: * Little proof of consistency of clamp load vs. input torque in either aluminum or magnesium castings. * No known data to understand the effect on consistency of clamp load as casting dies wear. The clamp load consistency concern is founded in the fact that a portion of the input torque used to create clamp load is also used to create threads. The torque used for thread forming may not be consistent due to variations in casting material, hole size and shape due to tooling wear and process variation (thermal and mechanical). There is little data available to understand the magnitude of this concern or to form the basis of potential solutions if the range of clamp load variation is very high (> +/- 30%). The range of variation that can be expected in as-cast hole size and shape over the full life cycle of a high pressure die casting die was established in previous work completed by Pacific Northwest National Laboratory, (PNNL). This established range of variation was captured in a set of 12 cast bosses by designing core pins at the size and draft angles identified in the sited previous work. The cast bosses were cut into nuts that could be used in the Ford Fastener Laboratory test-cell to measure clamp load when a thread forming fastener was driven into a cast nut. There were two sets of experiments run. First, a series of cast aluminum nuts were made reflecting the range of shape and size variations to be expected over the life cycle of a die casting die. Taptite thread forming fasteners, (a widely used thread forming fastener suitable for aluminum applications), were driven into the various cored, as

  15. Application of Thread-Forming Fasteners in Net-Shaped Cast Holes in Lightweight Metal Alloys

    SciTech Connect (OSTI)

    Paxton, Dean M.; Dudder, Gregory J.; Charron, William A.; Cleaver, Todd H.

    2006-03-12

    The application of thread-forming fasteners (TFFs) in net-shaped die-cast holes of lightweight metal alloys is being explored by the United States Automotive Materials Partnership (USAMP) through work at the Pacific Northwest National Laboratory (PNNL). These fasteners are being applied in drilled hole applications for general assembly which have reduced costs, reduced investment, and improved warranty while delivering better joint properties. Successful development of this idea in light-weight alloy die-cast products will expand the use of lightweight materials due to the proven benefits already achieved in existing applications. A portion of this effort has included a parametric study of the relationship between joint strength and as-cast hole geometry in aluminum alloy A380 test specimens.

  16. Shanghai Aerospace Industrial General Corporation aka Shanghai...

    Open Energy Info (EERE)

    Industrial General Corporation aka Shanghai Academy of Spaceflight Technology Jump to: navigation, search Name: Shanghai Aerospace Industrial General Corporation (aka Shanghai...

  17. The ARM Unmanned Aerospace Vehicle Program

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The ARM Unmanned Aerospace Vehicle Program The ARM Program's focus is on climate research, specifi- cally research related to solar radiation and its interaction with clouds. The SGP CART site contains highly sophisti- cated surface instrumentation, but even these instruments cannot gather some crucial climate data from high in our atmosphere. The lowest layer of our atmosphere, known as the "troposphere," is where our weather events take place. The troposphere contains virtually all

  18. Mr. Andy Wall0 The Aerospace Corporation

    Office of Legacy Management (LM)

    'k.f' :, , j '"; ,,' DEC 5 1984 Mr. Andy Wall0 The Aerospace Corporation suite 4000 955 L'Enfant Plaza, S.W. Washington, D.C. 20024 Dear Mr. Wallo: The Divisfon of Remedial Action Projects staff has reviewed the authority review documents for Gardinler, Inc., Tampa, Florida; Conserv (formerly Virginia-Carolina Chemical Co.), Nichols, Florida; and Blockson Chemical co., Joliet, Illinois. Based on the content therein and in consultation with Mr. Steve Miller, Office of General Counsel

  19. The ARM unpiloted aerospace vehicle (UAV) program

    SciTech Connect (OSTI)

    Sowle, D.

    1995-09-01

    Unmanned aerospace vehicles (UAVs) are an important complement to the DOE`s Atmospheric Radiation Measurement (ARM) Program. ARM is primarily a ground-based program designed to extensively quantify the radiometric and meteorological properties of an atmospheric column. There is a need for airborne measurements of radiative profiles, especially flux at the tropopause, cloud properties, and upper troposphere water vapor. There is also a need for multi-day measurements at the tropopause; for example, in the tropics, at 20 km for over 24 hours. UAVs offer the greatest potential for long endurance at high altitudes and may be less expensive than piloted flights. 2 figs.

  20. THE AEROSPACE CORPORA-iION

    Office of Legacy Management (LM)

    CORPORA-iION Suite 4000. 955 L' EnJant Plnro. S. W.. Washingion. D.C. 20024-2174. Telephone: (2d2) 488-6000 7117~03.87.cdy.27 27 May 1987 Mr. Andrew Wallo, III, NE:23 Division of Facility & Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: STATUS OF ACTIONS - FUSRAP SITE LIST Aerospace recently completed a comprehensive review of sites listed in the FUSRAP Site Investigation and Remeaial Action Summary Report, dated December 31, 1986. The

  1. Single Ion Implantation

    ScienceCinema (OSTI)

    Thomas Schenkel

    2010-01-08

    On the equipment needed to implant ions in silicon and other materials. More information: http://newscenter.lbl.gov/f...

  2. Working Group Reports Unmanned Aerospace Vehicle Workshop J. Vitko, Jr.

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Working Group Reports Unmanned Aerospace Vehicle Workshop J. Vitko, Jr. Sandia National Laboratories Livermore, California The Unmanned Aerospace Vehicle (UAV) Workshop concentrated on reviewing and refining the science experiments planned for the UAV Demonstration Flights (UDF) scheduled at the Oklahoma Cloud and Radiation Testbed (CART) in April 1994. These experiments are summarized below. UDF Experiments 1. Clear sky, daylight Scientific questions: Do models and observations agree? Under

  3. Linear-array systems for aerospace NDE

    SciTech Connect (OSTI)

    Smith, Robert A.; Willsher, Stephen J.; Bending, Jamie M.

    1999-12-02

    Rapid large-area inspection of composite structures for impact damage and multi-layered aluminum skins for corrosion has been a recognized priority for several years in both military and civil aerospace applications. Approaches to this requirement have followed two clearly different routes: the development of novel large-area inspection systems, and the enhancement of current ultrasonic or eddy-current methods to reduce inspection times. Ultrasonic inspection is possible with standard flaw detection equipment but the addition of a linear ultrasonic array could reduce inspection times considerably. In order to investigate their potential, 9-element and 17-element linear ultrasonic arrays for composites, and 64-element arrays for aluminum skins, have been developed to DERA specifications for use with the ANDSCAN area scanning system. A 5 m{sup 2} composite wing surface has been scanned with a scan resolution of approximately 3 mm in 6 hours. With subsequent software and hardware improvements all four composite wing surfaces (top/bottom, left/right) of a military fighter aircraft can potentially be inspected in less than a day. Array technology has been very widely used in the medical ultrasound field although rarely above 10 MHz, whereas lap-joint inspection requires a pulse center-frequency of 12 to 20 MHz in order to resolve the separate interfaces in the lap joint. A 128 mm-long multi-element array of 5 mmx2 mm ultrasonic elements for use with the ANDSCAN scanning software was produced to a DERA specification by an NDT manufacturer with experience in the medical imaging field. This paper analyses the performance of the transducers that have been produced and evaluates their use in scanning systems of different configurations.

  4. ARM - Field Campaign - Unmanned Aerospace Vehicle (UAV) IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsUnmanned Aerospace Vehicle (UAV) IOP Campaign Links ARM UAV Program Science Plan ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Unmanned Aerospace Vehicle (UAV) IOP 1996.09.01 - 1996.09.30 Lead Scientist : John Vitko For data sets, see below. Abstract Fall 1996 Flight Series Campaign Data Sets IOP Participant Data Source Description Final Data Tooman UAV-Altus Order Data Tooman Tw

  5. Hydroxylapatite Otologic Implants

    SciTech Connect (OSTI)

    McMillan, A.D.; Lauf, R.J.; Beale, B.; Johnson, R.

    2000-01-01

    A Cooperative Research and Development Agreement (CRADA) between Lockheed Martin Energy Research Corporation (LMER) and Smith and Nephew Richards Inc. of Bartlett, TN, was initiated in March 1997. The original completion date for the Agreement was March 25, 1998. The purpose of this work is to develop and commercialize net shape forming methods for directly creating dense hydroxylapatite (HA) ceramic otologic implants. The project includes three tasks: (1) modification of existing gelcasting formulations to accommodate HA slurries; (2) demonstration of gelcasting to fabricate green HA ceramic components of a size and shape appropriate to otologic implants: and (3) sintering and evaluation of the HA components.

  6. Session Papers Atmospheric Radiation Measurement Program- Unmanned Aerospace Vehicle: The Follow-On Phase

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Session Papers Atmospheric Radiation Measurement Program- Unmanned Aerospace Vehicle: The Follow-On Phase J. Vitko, Jr. ARM-UAV Technical Director Sandia National Laboratories Livermore, California A companion paper ("Unmanned Aerospace Vehicle Workshop," this volume) discusses the initial unmanned aerospace vehicle (UAV) demonstration flights (UDF). These flights are designed to provide an early demonstration of the scientific utility of UAVs by using an existing UAV and instruments

  7. Tissue implantation method and apparatus

    DOE Patents [OSTI]

    Doss, J.D.

    1979-12-05

    The disclosure describes the implantation of seeds of radioactive material into body tissue utilizing a cannula and anchor containing suture.

  8. Remote actuated valve implant

    DOE Patents [OSTI]

    McKnight, Timothy E; Johnson, Anthony; Moise, Jr., Kenneth J; Ericson, Milton Nance; Baba, Justin S; Wilgen, John B; Evans, III, Boyd McCutchen

    2014-02-25

    Valve implant systems positionable within a flow passage, the systems having an inlet, an outlet, and a remotely activatable valve between the inlet and outlet, with the valves being operable to provide intermittent occlusion of the flow path. A remote field is applied to provide thermal or magnetic activation of the valves.

  9. UAVs in climate research: The ARM Unmanned Aerospace Vehicle Program

    SciTech Connect (OSTI)

    Bolton, W.R.

    1994-05-01

    In the last year, a Department of Energy/Strategic Environmental Research and Development Program project known as ``ARM-UAV`` has made important progress in developing and demonstrating the utility of unmanned aerospace vehicles as platforms for scientific measurements. Recent accomplishments include a series of flights using an atmospheric research payload carried by a General Atomics Gnat UAV at Edwards AFB, California, and over ground instruments located in north-central Oklahoma. The reminder of this discussion will provide background on the program and describe the recent flights.

  10. Recent developments in graphite. [Use in HTGR and aerospace

    SciTech Connect (OSTI)

    Cunningham, J.E.

    1983-01-01

    Overall, the HTGR graphite situation is in excellent shape. In both of the critical requirements, fuel blocks and support structures, adequate graphites are at hand and improved grades are sufficiently far along in truncation. In the aerospace field, GraphNOL N3M permits vehicle performance with confidence in trajectories unobtainable with any other existing material. For fusion energy applications, no other graphite can simultaneously withstand both extreme thermal shock and neutron damage. Hence, the material promises to create new markets as well as to offer a better candidate material for existing applications.

  11. I I THE AEROSPACE CORPORATION I I,W. I

    Office of Legacy Management (LM)

    s I I THE AEROSPACE CORPORATION I I,W. I .%tc 7900,955 L%nfam Plaza. S. W., Wahingron. D.C. 20024-2174, T~kpdnc: (202) 488-6@~ 7117~03.87.cdy.43 23 September 1987 CR CA*03 Mr. Andrew Wallo, III, NE-23 Division of Facility & Site Deconnnissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: ELIMINATION RECOMMENDATION -- COLLEGES AND "NIVERSITIiS M/&b-s pl p.o- The attached elimination recommendation was prepared in accordance ML.05 with your

  12. Active sensors for health monitoring of aging aerospace structures

    SciTech Connect (OSTI)

    GIURGIUTIU,VICTOR; REDMOND,JAMES M.; ROACH,DENNIS P.; RACKOW,KIRK A.

    2000-03-08

    A project to develop non-intrusive active sensors that can be applied on existing aging aerospace structures for monitoring the onset and progress of structural damage (fatigue cracks and corrosion) is presented. The state of the art in active sensors structural health monitoring and damage detection is reviewed. Methods based on (a) elastic wave propagation and (b) electro-mechanical (NM) impedance technique are sighted and briefly discussed. The instrumentation of these specimens with piezoelectric active sensors is illustrated. The main detection strategies (E/M impedance for local area detection and wave propagation for wide area interrogation) are discussed. The signal processing and damage interpretation algorithms are tuned to the specific structural interrogation method used. In the high-frequency EIM impedance approach, pattern recognition methods are used to compare impedance signatures taken at various time intervals and to identify damage presence and progression from the change in these signatures. In the wave propagation approach, the acoustic-ultrasonic methods identifying additional reflection generated from the damage site and changes in transmission velocity and phase are used. Both approaches benefit from the use of artificial intelligence neural networks algorithms that can extract damage features based on a learning process. Design and fabrication of a set of structural specimens representative of aging aerospace structures is presented. Three built-up specimens, (pristine, with cracks, and with corrosion damage) are used. The specimen instrumentation with active sensors fabricated at the University of South Carolina is illustrated. Preliminary results obtained with the E/M impedance method on pristine and cracked specimens are presented.

  13. Broad beam ion implanter

    DOE Patents [OSTI]

    Leung, K.N.

    1996-10-08

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.

  14. Broad beam ion implanter

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    1996-01-01

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

  15. Implantable medical sensor system

    DOE Patents [OSTI]

    Darrow, Christopher B.; Satcher, Jr., Joe H.; Lane, Stephen M.; Lee, Abraham P.; Wang, Amy W.

    2001-01-01

    An implantable chemical sensor system for medical applications is described which permits selective recognition of an analyte using an expandable biocompatible sensor, such as a polymer, that undergoes a dimensional change in the presence of the analyte. The expandable polymer is incorporated into an electronic circuit component that changes its properties (e.g., frequency) when the polymer changes dimension. As the circuit changes its characteristics, an external interrogator transmits a signal transdermally to the transducer, and the concentration of the analyte is determined from the measured changes in the circuit. This invention may be used for minimally invasive monitoring of blood glucose levels in diabetic patients.

  16. Compliance with the Aerospace MACT Standard at Lockheed Martin

    SciTech Connect (OSTI)

    Kurucz, K.L.; Vicars, S.; Fetter, S.; Mueller, T.

    1997-12-31

    Actions taken and planned at four Lockheed Martin Corporation (LMC) facilities to comply with the Aerospace MACT Standard are reviewed. Many LMC sites have taken proactive steps to reduce emissions and implement low VOC coating technology. Significant administrative, facility, and material challenges remain to achieve compliance with the upcoming NESHAP and Control Technology Guideline (CTG) standards. The facilities discussed herein set up programs to develop and implement compliance strategies. These facilities manufacture military aircraft, missiles, satellites, rockets, and electronic guidance and communications systems. Some of the facilities are gearing up for new production lines subject to new source MACT standards. At this time the facilities are reviewing compliance status of all primers, topcoats, maskants and solvents subject to the standard. Facility personnel are searching for the most efficient methods of satisfying the recordkeeping, reporting and monitoring, sections of the standards while simultaneously preparing or reviewing their Title V permit applications. Facility decisions on paint booths are the next highest priority. Existing dry filter paint booths will be subject to the filtration standard for existing paint booths which requires the use of two-stage filters. Planned paint booths for the F-22 program, and other new booths must comply with the standard for new and rebuilt booths which requires three stage or HEPA filters. Facilities looking to replace existing water wash paint booths, and those required to retrofit the air handling equipment to accommodate the two-stage filters, are reviewing issues surrounding the rebuilt source definition.

  17. Atmospheric radiation measurement unmanned aerospace vehicle (ARM-UAV) program

    SciTech Connect (OSTI)

    Bolton, W.R.

    1996-11-01

    ARM-UAV is part of the multi-agency U.S. Global Change Research Program and is addressing the largest source of uncertainty in predicting climatic response: the interaction of clouds and the sun`s energy in the Earth`s atmosphere. An important aspect of the program is the use of unmanned aerospace vehicles (UAVs) as the primary airborne platform. The ARM-UAV Program has completed two major flight series: The first series conducted in April, 1994, using an existing UAV (the General Atomics Gnat 750) consisted of eight highly successful flights at the DOE climate site in Oklahoma. The second series conducted in September/October, 1995, using two piloted aircraft (Egrett and Twin Otter), featured simultaneous measurements above and below clouds and in clear sky. Additional flight series are planned to continue study of the cloudy and clear sky energy budget in the Spring and Fall of 1996 over the DOE climate site in Oklahoma. 3 refs., 4 figs., 1 tab.

  18. Titanium cholla : lightweight, high-strength structures for aerospace applications.

    SciTech Connect (OSTI)

    Atwood, Clinton J.; Voth, Thomas Eugene; Taggart, David G.; Gill, David Dennis; Robbins, Joshua H.; Dewhurst, Peter

    2007-10-01

    Aerospace designers seek lightweight, high-strength structures to lower launch weight while creating structures that are capable of withstanding launch loadings. Most 'light-weighting' is done through an expensive, time-consuming, iterative method requiring experience and a repeated design/test/redesign sequence until an adequate solution is obtained. Little successful work has been done in the application of generalized 3D optimization due to the difficulty of analytical solutions, the large computational requirements of computerized solutions, and the inability to manufacture many optimized structures with conventional machining processes. The Titanium Cholla LDRD team set out to create generalized 3D optimization routines, a set of analytically optimized 3D structures for testing the solutions, and a method of manufacturing these complex optimized structures. The team developed two new computer optimization solutions: Advanced Topological Optimization (ATO) and FlexFEM, an optimization package utilizing the eXtended Finite Element Method (XFEM) software for stress analysis. The team also developed several new analytically defined classes of optimized structures. Finally, the team developed a 3D capability for the Laser Engineered Net Shaping{trademark} (LENS{reg_sign}) additive manufacturing process including process planning for 3D optimized structures. This report gives individual examples as well as one generalized example showing the optimized solutions and an optimized metal part.

  19. Medical implants and methods of making medical implants

    DOE Patents [OSTI]

    Shaw, Wendy J; Yonker, Clement R; Fulton, John L; Tarasevich, Barbara J; McClain, James B; Taylor, Doug

    2014-09-16

    A medical implant device having a substrate with an oxidized surface and a silane derivative coating covalently bonded to the oxidized surface. A bioactive agent is covalently bonded to the silane derivative coating. An implantable stent device including a stent core having an oxidized surface with a layer of silane derivative covalently bonded thereto. A spacer layer comprising polyethylene glycol (PEG) is covalently bonded to the layer of silane derivative and a protein is covalently bonded to the PEG. A method of making a medical implant device including providing a substrate having a surface, oxidizing the surface and reacting with derivitized silane to form a silane coating covalently bonded to the surface. A bioactive agent is then covalently bonded to the silane coating. In particular instances, an additional coating of bio-absorbable polymer and/or pharmaceutical agent is deposited over the bioactive agent.

  20. Implantable biomedical devices on bioresorbable substrates

    SciTech Connect (OSTI)

    Rogers, John A; Kim, Dae-Hyeong; Omenetto, Fiorenzo; Kaplan, David L; Litt, Brian; Viventi, Jonathan; Huang, Yonggang; Amsden, Jason

    2014-03-04

    Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

  1. Pulsed source ion implantation apparatus and method

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    1996-01-01

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

  2. Pulsed source ion implantation apparatus and method

    DOE Patents [OSTI]

    Leung, K.N.

    1996-09-24

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

  3. Controlled ion implant damage profile for etching

    DOE Patents [OSTI]

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  4. Fractional order PID controller for improvement of PMSM speed control in aerospace applications

    SciTech Connect (OSTI)

    Saraji, Ali Motalebi; Ghanbari, Mahmood

    2014-12-10

    Because of the benefits reduced size, cost and maintenance, noise, CO2 emissions and increased control flexibility and precision, to meet these expectations, electrical equipment increasingly utilize in modern aircraft systems and aerospace industry rather than conventional mechanic, hydraulic, and pneumatic power systems. Electric motor drives are capable of converting electrical power to drive actuators, pumps, compressors, and other subsystems at variable speeds. In the past decades, permanent magnet synchronous motor (PMSM) and brushless dc (BLDC) motor were investigated for aerospace applications such as aircraft actuators. In this paper, the fractional-order PID controller is used in the design of speed loop of PMSM speed control system. Having more parameters for tuning fractional order PID controller lead to good performance ratio to integer order. This good performance is shown by comparison fractional order PID controller with the conventional PI and tuned PID controller by Genetic algorithm in MATLAB soft wear.

  5. Implantation, Activation, Characterization and Prevention/Mitigation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Internal Short Circuits in Lithium-Ion Cells Implantation, Activation, Characterization and PreventionMitigation of Internal Short Circuits in Lithium-Ion Cells 2012 ...

  6. Implantable, remotely-programmable insulin infusion system

    SciTech Connect (OSTI)

    Carlson, G.A.; Bair, R.E.; Gaona, J.I. Jr.; Love, J.T.; Urenda, R.S.

    1981-10-01

    An implantable, remotely-programmable insulin infusion system is described which has a mass of 280 grams and an implanted lifetime exceeding two years. The system uses a rotary solenoid-driven peristaltic pump controlled by low power CMOS timing circuitry which provides bimodal insulin delivery. Fifteen low rates from 0.39 to 5.9 units/hour and 15 high doses from 0.84 to 12.5 units are available using U100 insulin. The system has been tested in the laboratory, evaluated in diabetic dogs, and implanted in one diabetic human.

  7. THE AEROSPACE

    Office of Legacy Management (LM)

    Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. ... to expedite the formal documentation of elimination decisions and closeout of site files. ...

  8. THE AEROSPACE

    Office of Legacy Management (LM)

    Decommissioning Projects U.S. Department of Energy Germantown, Maryland? 20545 Dear Mr. ... to expedite the formal documentation off elimination decisions and closeout of site files. ...

  9. Atmospheric Radiation Measurement Program - unmanned aerospace vehicle: The follow-on phase

    SciTech Connect (OSTI)

    Vitko, J. Jr.

    1995-04-01

    Unmanned Aerospace Vehicle (UAV) demonstration flights (UDF) are designed to provide an early demonstration of the scientific utility of UAVs by using an existing UAV and instruments to measure broadband radiative flux profiles under clear sky conditions. UDF is but the first of three phases of ARM-UAV. The second phase significantly extends both the UAV measurement techniques and the available instrumentation to allow both multi-UAV measurements in cloudy skies and extended duration measurements in the tropopause. These activities build naturally to the third and final phase, that of full operational capability, i.e., UAVs capable of autonomous operations at 20-km altitudes for multiple days with a full suite of instrumentation for measuring radiative flux, cloud properties, and water vapor profiles.

  10. Ion sources for ion implantation technology (invited)

    SciTech Connect (OSTI)

    Sakai, Shigeki Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm 10 cm, and the beam uniformity is important as well as the total target beam current.

  11. Ultrasound image guided acetabular implant orientation during total hip replacement

    DOE Patents [OSTI]

    Chang, John; Haddad, Waleed; Kluiwstra, Jan-Ulco; Matthews, Dennis; Trauner, Kenneth

    2003-08-19

    A system for assisting in precise location of the acetabular implant during total hip replacement. The system uses ultrasound imaging for guiding the placement and orientation of the implant.

  12. Dosimetry implant for treating restenosis and hyperplasia

    DOE Patents [OSTI]

    Srivastava, Suresh; Gonzales, Gilbert R; Howell, Roger W; Bolch, Wesley E; Adzic, Radoslav

    2014-09-16

    The present invention discloses a method of selectively providing radiation dosimetry to a subject in need of such treatment. The radiation is applied by an implant comprising a body member and .sup.117mSn electroplated at selected locations of the body member, emitting conversion electrons absorbed immediately adjacent selected locations while not affecting surrounding tissue outside of the immediately adjacent area.

  13. Implantable apparatus for localized heating of tissue

    DOE Patents [OSTI]

    Doss, J.D.

    1985-05-20

    With the object of repetitively treating deep-seated, inoperable tumors by hyperthermia as well as locally heating other internal tissue masses repetitively, a receiving antenna, transmission line and electrode arrangement are implanted completely within the patient's body, with the receiving antenna just under the surface of the skin and with the electrode arrangement being located so as to most effectively heat the tissue to be treated. An external, transmitting antenna, driven by an external radio-frequency energy source, is closely coupled to the implanted receiving antenna so that the energy coupled across the air-skin interface provides electromagnetic energy suitable for heating the tissue in the vicinity of the implanted electrodes. The resulting increase in tissue temperature may be estimated by an indirect measurement of the decrease in tissue resistivity in the heat region. This change in resistivity appears as a change in the loading of the receiving antenna which can be measured by either determining the change in the phase relationship between the voltage and the current appearing on the transmitting antenna or by measuring the change in the magnitude of the impedance thereof. Optionally, multiple electrode arrays may be activated or inactivated by the application of magnetic fields to operate implanted magnetic reed swtiches. 5 figs.

  14. Implantable apparatus for localized heating of tissue

    DOE Patents [OSTI]

    Doss, James D.

    1987-01-01

    With the object of repetitively treating deep-seated, inoperable tumors by hyperthermia as well as locally heating other internal tissue masses repetitively, a receiving antenna, transmission line, and electrode arrangment are implanted completely within the patient's body, with the receiving antenna just under the surface of the skin and with the electrode arrangement being located so as to most effectively heat the tissue to be treated. An external, transmitting antenna, driven by an external radio-frequency energy source, is closely coupled to the implanted receiving antenna so that the energy coupled across the air-skin interface provides electromagnetic energy suitable for heating the tissue in the vicinity of the implanted electrodes. The resulting increase in tissue temperature may be estimated by an indirect measurement of the decrease in tissue resistivity in the heated region. This change in resistivity appears as a change in the loading of the receiving antenna which can be measured by either determining the change in the phase relationship between the voltage and the current appearing on the transmitting antenna or by measuring the change in the magnitude of the impedance thereof. Optionally, multiple electrode arrays may be activated or inactivated by the application of magnetic fields to operate implanted magnetic reed switches.

  15. Method for ion implantation induced embedded particle formation via reduction

    DOE Patents [OSTI]

    Hampikian, Janet M; Hunt, Eden M

    2001-01-01

    A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

  16. Modeling the Behaviour of an Advanced Material Based Smart Landing Gear System for Aerospace Vehicles

    SciTech Connect (OSTI)

    Varughese, Byji; Dayananda, G. N.; Rao, M. Subba

    2008-07-29

    The last two decades have seen a substantial rise in the use of advanced materials such as polymer composites for aerospace structural applications. In more recent years there has been a concerted effort to integrate materials, which mimic biological functions (referred to as smart materials) with polymeric composites. Prominent among smart materials are shape memory alloys, which possess both actuating and sensory functions that can be realized simultaneously. The proper characterization and modeling of advanced and smart materials holds the key to the design and development of efficient smart devices/systems. This paper focuses on the material characterization; modeling and validation of the model in relation to the development of a Shape Memory Alloy (SMA) based smart landing gear (with high energy dissipation features) for a semi rigid radio controlled airship (RC-blimp). The Super Elastic (SE) SMA element is configured in such a way that it is forced into a tensile mode of high elastic deformation. The smart landing gear comprises of a landing beam, an arch and a super elastic Nickel-Titanium (Ni-Ti) SMA element. The landing gear is primarily made of polymer carbon composites, which possess high specific stiffness and high specific strength compared to conventional materials, and are therefore ideally suited for the design and development of an efficient skid landing gear system with good energy dissipation characteristics. The development of the smart landing gear in relation to a conventional metal landing gear design is also dealt with.

  17. Bioactive glass coatings for orthopedic metallic implants

    SciTech Connect (OSTI)

    Lopez-Esteban, Sonia; Saiz, Eduardo; Fujino, Sigheru; Oku, Takeo; Suganuma, Katsuaki; Tomsia, Antoni P.

    2003-06-30

    The objective of this work is to develop bioactive glass coatings for metallic orthopedic implants. A new family of glasses in the SiO2-Na2O-K2O-CaO-MgO-P2O5 system has been synthesized and characterized. The glass properties (thermal expansion, softening and transformation temperatures, density and hardness) are in line with the predictions of established empirical models. The optimized firing conditions to fabricate coatings on Ti-based and Co-Cr alloys have been determined and related to the glass properties and the interfacial reactions. Excellent adhesion to alloys has been achieved through the formation of 100-200 nm thick interfacial layers (Ti5Si3 on Ti-based alloys and CrOx on Co-Cr). Finally, glass coatings, approximately 100 mu m thick, have been fabricated onto commercial Ti alloy-based dental implants.

  18. Ion implantation and annealing conditions for delamination of silicon layers by hydrogen ion implantation

    SciTech Connect (OSTI)

    Hara, Tohru; Kakizaki, Yasuo; Kihana, Takeo; Oshima, Sohtaro; Kitamura, Taira; Kajiyama, Kenji; Yoneda, Tomoaki; Sekine, Kohei; Inoue, Morio

    1997-04-01

    The delamination of thin silicon layers by ion implantation and annealing has been studied in H{sup +} implanted silicon layers. Hydrogen ions are implanted into a (100) p-silicon layer through a 100 nm thick oxide layer at 100 keV with different doses ranging from 1.0 {times} 10{sup 16} to 1.0 {times} 10{sup 17} ion/cm{sup 2}. Delamination of thin silicon layers was clearly observed in cross-sectional scanning electron microscope photographs at doses above 5.0 {times} 10{sup 16} ion/cm{sup 2}. The delamination occurs at 485 C with 10 min annealing for an implantation at 5.0 {times} 10{sup 16} ion/cm{sup 2}. This temperature, however, can be reduced to 425 and 400 C by increasing annealing time to 60 and 120 min, respectively. Delamination is closely related to the formation of H-Si defect bonds and the release of a hydrogen atom from these bonds in the hydrogen ion implanted Si layer. Temperature variation of the intensity in the hydrogen desorption shows two intensity peaks at 450 and 650 C.

  19. Production of Endohedral Fullerenes by Ion Implantation

    SciTech Connect (OSTI)

    Diener, M.D.; Alford, J. M.; Mirzadeh, S.

    2007-05-31

    The empty interior cavity of fullerenes has long been touted for containment of radionuclides during in vivo transport, during radioimmunotherapy (RIT) and radioimaging for example. As the chemistry required to open a hole in fullerene is complex and exceedingly unlikely to occur in vivo, and conformational stability of the fullerene cage is absolute, atoms trapped within fullerenes can only be released during extremely energetic events. Encapsulating radionuclides in fullerenes could therefore potentially eliminate undesired toxicity resulting from leakage and catabolism of radionuclides administered with other techniques. At the start of this project however, methods for production of transition metal and p-electron metal endohedral fullerenes were completely unknown, and only one method for production of endohedral radiofullerenes was known. They therefore investigated three different methods for the production of therapeutically useful endohedral metallofullerenes: (1) implantation of ions using the high intensity ion beam at the Oak Ridge National Laboratory (ORNL) Surface Modification and Characterization Research Center (SMAC) and fullerenes as the target; (2) implantation of ions using the recoil energy following alpha decay; and (3) implantation of ions using the recoil energy following neutron capture, using ORNL's High Flux Isotope Reactor (HFIR) as a thermal neutron source. While they were unable to obtain evidence of successful implantation using the ion beam at SMAC, recoil following alpha decay and neutron capture were both found to be economically viable methods for the production of therapeutically useful radiofullerenes. In this report, the procedures for preparing fullerenes containing the isotopes {sup 212}Pb, {sup 212}Bi, {sup 213}Bi, and {sup 177}Lu are described. None of these endohedral fullerenes had ever previously been prepared, and all of these radioisotopes are actively under investigation for RIT. Additionally, the chemistry for

  20. Ultrafine-grained titanium for medical implants

    DOE Patents [OSTI]

    Zhu, Yuntian T.; Lowe, Terry C.; Valiev, Ruslan Z.; Stolyarov, Vladimir V.; Latysh, Vladimir V.; Raab, Georgy J.

    2002-01-01

    We disclose ultrafine-grained titanium. A coarse-grained titanium billet is subjected to multiple extrusions through a preheated equal channel angular extrusion (ECAE) die, with billet rotation between subsequent extrusions. The resulting billet is cold processed by cold rolling and/or cold extrusion, with optional annealing. The resulting ultrafine-grained titanium has greatly improved mechanical properties and is used to make medical implants.

  1. Method of electroplating a conversion electron emitting source on implant

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Gonzales, Gilbert R.; Adzic, Radoslav; Meinken, George E.

    2012-02-14

    Methods for preparing an implant coated with a conversion electron emitting source (CEES) are disclosed. The typical method includes cleaning the surface of the implant; placing the implant in an activating solution comprising hydrochloric acid to activate the surface; reducing the surface by H.sub.2 evolution in H.sub.2SO.sub.4 solution; and placing the implant in an electroplating solution that includes ions of the CEES, HCl, H.sub.2SO.sub.4, and resorcinol, gelatin, or a combination thereof. Alternatively, before tin plating, a seed layer is formed on the surface. The electroplated CEES coating can be further protected and stabilized by annealing in a heated oven, by passivation, or by being covered with a protective film. The invention also relates to a holding device for holding an implant, wherein the device selectively prevents electrodeposition on the portions of the implant contacting the device.

  2. Porous coatings from wire mesh for bone implants

    DOE Patents [OSTI]

    Sump, Kenneth R.

    1986-01-01

    A method of coating areas of bone implant elements and the resulting implant having a porous coating are described. Preselected surface areas are covered by a preform made from continuous woven lengths of wire. The preform is compressed and heated to assure that diffusion bonding occurs between the wire surfaces and between the surface boundaries of the implant element and the wire surfaces in contact with it. Porosity is achieved by control of the resulting voids between the bonded wire portions.

  3. On the state of Mn impurity implanted in Si

    SciTech Connect (OSTI)

    Orlov, A. F.; Bublik, V. T.; Vdovin, V. I.; Agafonov, Yu. A.; Balagurov, L. A.; Zinenko, V. I.; Kulemanov, I. V.; Shcherbachev, K. D.

    2009-07-15

    The state of manganese impurity in implanted silicon at implantation doses of up to 5 x 10{sup 16} cm{sup -2} has been investigated by X-ray diffraction and transmission electron microscopy. It is established that, after short-term vacuum annealing at 850{sup o}C, most of the implanted manganese impurities are in microinclusions up to 20 nm in size formed by a tetragonal silicide phase of the Mn{sub 15}Si{sub 26} type.

  4. Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc technique

    SciTech Connect (OSTI)

    Han, Z. J.; Tay, B. K.; Sze, J. Y.; Ha, P. C. T.

    2007-05-15

    A thin passivation layer of aluminum oxide was deposited on polyimide by using the combined plasma immersion ion implantation and deposition (PIII and D) and cathodic vacuum arc technique. X-ray photoelectron spectroscopy C 1s spectra showed that the carbonyl bond (C=O) and ether group (C-O-C and C-N-C) presented in pristine polyimide were damaged by implantation of aluminum ions and deposition of an aluminum oxide passivation layer. O 1s and Al 2p spectra confirmed the formation of a thin aluminum oxide passivation layer. This passivation layer can be implemented in aerospace engineering where polyimide may suffer degradation from fast atomic oxygen in the low-earth-orbit environment. To test the protection of this passivation layer to energetic oxygen ions, a plasma-enhanced chemical vapor deposition system was used to simulate the oxygen-ion irradiation, and the results showed that a higher weight occurred for passivated samples compared to pristine ones. X-ray diffraction showed that Al peaks were presented on the surface region, but no aluminum oxide peak was detected. The authors then concluded that Al clusters were formed in polyimide besides aluminum oxide, which was in an x-ray amorphous state. Furthermore, contact-angle measurements showed a reduced contact angle for passivated polyimide from a pristine value of 78 deg. to 20 deg. by using deionized water. Several discussions have been made on the surface chemical and structural property changes by using the combined PIII and D and cathodic vacuum arc technique.

  5. Few Electron Quantum Dot coupling to Donor Implanted Electron...

    Office of Scientific and Technical Information (OSTI)

    Title: Few Electron Quantum Dot coupling to Donor Implanted Electron Spins. Abstract not provided. Authors: Rudolph, Martin ; Patrick Harvey-Collard ; Nielsen, Erik ; Gamble, John ...

  6. Biocompatible implants and methods of making and attaching the same

    DOE Patents [OSTI]

    Rowley, Adrian P; Laude, Lucien D; Humayun, Mark S; Weiland, James D; Lotfi, Atoosa; Markland, Jr., Francis S

    2014-10-07

    The invention provides a biocompatible silicone implant that can be securely affixed to living tissue through interaction with integral membrane proteins (integrins). A silicone article containing a laser-activated surface is utilized to make the implant. One example is an implantable prosthesis to treat blindness caused by outer retinal degenerative diseases. The device bypasses damaged photoreceptors and electrically stimulates the undamaged neurons of the retina. Electrical stimulation is achieved using a silicone microelectrode array (MEA). A safe, protein adhesive is used in attaching the MEA to the retinal surface and assist in alleviating focal pressure effects. Methods of making and attaching such implants are also provided.

  7. Structure-Assisted Functional Anchor Implantation in Robust Metal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Structure-Assisted Functional Anchor Implantation in Robust Metal-Organic Frameworks with ... functionality was performed to the functionalized framework via a click reaction. ...

  8. Microstructure evolution in carbon-ion implanted sapphire

    SciTech Connect (OSTI)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-15

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10{sup 17} or 2x10{sup 17} cm{sup -2} and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L{sub 1}) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L{sub 2}) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L{sub 3}) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  9. Students analyze artificial implants at ASM Materials Camp |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Students analyze artificial ... Students analyze artificial implants at ASM Materials Camp Posted: June 10, 2013 - 8:37am Student Hunter Stombaugh loads a material sample into the...

  10. Ion implantation of highly corrosive electrolyte battery components

    DOE Patents [OSTI]

    Muller, R.H.; Zhang, S.

    1997-01-14

    A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, and sodium sulfur. 6 figs.

  11. Ion implantation of highly corrosive electrolyte battery components

    DOE Patents [OSTI]

    Muller, Rolf H.; Zhang, Shengtao

    1997-01-01

    A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, end sodium sulfur.

  12. Process for forming one or more substantially pure layers in substrate material using ion implantation

    DOE Patents [OSTI]

    Musket, Ronald G.; Brown, David W.; Munir, Zuhair A.

    1990-01-01

    A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.

  13. Development of Linear Mode Detection for Top-down Ion Implantation...

    Office of Scientific and Technical Information (OSTI)

    - towards a two donor system in Si SNL nanoImplanter Single ion detectors Deterministic single ion implant Path forward to a two donor system This work was ...

  14. Method of fabricating optical waveguides by ion implantation doping

    DOE Patents [OSTI]

    Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

    1987-03-24

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

  15. Method of fabricating optical waveguides by ion implantation doping

    DOE Patents [OSTI]

    Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

    1989-01-01

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

  16. Charge state defect engineering of silicon during ion implantation

    SciTech Connect (OSTI)

    Brown, R.A.; Ravi, J.; Erokhin, Y.; Rozgonyi, G.A.; White, C.W.

    1997-01-01

    Effects of in situ interventions which alter defect interactions during implantation, and thereby affect the final damage state, have been investigated. Specifically, we examined effects of internal electric fields and charge carrier injection on damage accumulation in Si. First, we implanted H or He ions into diode structures which were either reverse or forward biased during implantation. Second, we implanted B or Si ions into plain Si wafers while illuminating them with UV light. In each case, the overall effect is one of damage reduction. Both the electric field and charge carrier injection effects may be understood as resulting from changes in defect interactions caused in part by changes to the charge state of defects formed during implantation.

  17. Implant for in-vivo parameter monitoring, processing and transmitting

    DOE Patents [OSTI]

    Ericson, Milton N. (Knoxville, TN); McKnight, Timothy E. (Greenback, TN); Smith, Stephen F. (London, TN); Hylton, James O. (Clinton, TN)

    2009-11-24

    The present invention relates to a completely implantable intracranial pressure monitor, which can couple to existing fluid shunting systems as well as other internal monitoring probes. The implant sensor produces an analog data signal which is then converted electronically to a digital pulse by generation of a spreading code signal and then transmitted to a location outside the patient by a radio-frequency transmitter to an external receiver. The implanted device can receive power from an internal source as well as an inductive external source. Remote control of the implant is also provided by a control receiver which passes commands from an external source to the implant system logic. Alarm parameters can be programmed into the device which are capable of producing an audible or visual alarm signal. The utility of the monitor can be greatly expanded by using multiple pressure sensors simultaneously or by combining sensors of various physiological types.

  18. Glass/ceramic coatings for implants

    DOE Patents [OSTI]

    Tomsia, Antoni P.; Saiz, Eduardo; Gomez-Vega, Jose M.; Marshall, Sally J.; Marshall, Grayson W.

    2011-09-06

    Glass coatings on metals including Ti, Ti6A14V and CrCo were prepared for use as implants. The composition of the glasses was tailored to match the thermal expansion of the substrate metal. By controlling the firing atmosphere, time, and temperature, it was possible to control the reactivity between the glass and the alloy and to fabricate coatings (25-150 .mu.m thick) with excellent adhesion to the substrate. The optimum firing temperatures ranged between 800 and 840.degree. C. at times up to 1 min in air or 15 min in N.sub.2. The same basic technique was used to create multilayered coatings with concentration gradients of hydroxyapatite (HA) particles and SiO.sub.2.

  19. Implantation conditions for diamond nanocrystal formation in amorphous silica

    SciTech Connect (OSTI)

    Buljan, Maja; Radovic, Iva Bogdanovic; Desnica, Uros V.; Ivanda, Mile; Jaksic, Milko; Saguy, Cecile; Kalish, Rafi; Djerdj, Igor; Tonejc, Andelka; Gamulin, Ozren

    2008-08-01

    We present a study of carbon ion implantation in amorphous silica, which, followed by annealing in a hydrogen-rich environment, leads to preferential formation of carbon nanocrystals with cubic diamond (c-diamond), face-centered cubic (n-diamond), or simple cubic (i-carbon) carbon crystal lattices. Two different annealing treatments were used: furnace annealing for 1 h and rapid thermal annealing for a brief period, which enables monitoring of early nucleation events. The influence of implanted dose and annealing type on carbon and hydrogen concentrations, clustering, and bonding were investigated. Rutherford backscattering, elastic recoil detection analysis, infrared spectroscopy, transmission electron microscopy, selected area electron diffraction, ultraviolet-visible absorption measurements, and Raman spectroscopy were used to study these carbon formations. These results, combined with the results of previous investigations on similar systems, show that preferential formation of different carbon phases (diamond, n-diamond, or i-carbon) depends on implantation energy, implantation dose, and annealing conditions. Diamond nanocrystals formed at a relatively low carbon volume density are achieved by deeper implantation and/or lower implanted dose. Higher volume densities led to n-diamond and finally to i-carbon crystal formation. This observed behavior is related to damage sites induced by implantation. The optical properties of different carbon nanocrystal phases were significantly different.

  20. Nanocomposite formed by titanium ion implantation into alumina

    SciTech Connect (OSTI)

    Spirin, R. E.; Salvadori, M. C. Teixeira, F. S.; Sgubin, L. G.; Cattani, M.; Brown, I. G.

    2014-11-14

    Composites of titanium nanoparticles in alumina were formed by ion implantation of titanium into alumina, and the surface electrical conductivity measured in situ as the implantation proceeded, thus generating curves of sheet conductivity as a function of dose. The implanted titanium self-conglomerates into nanoparticles, and the spatial dimensions of the buried nanocomposite layer can thus be estimated from the implantation depth profile. Rutherford backscattering spectrometry was performed to measure the implantation depth profile, and was in good agreement with the calculated profile. Transmission electron microscopy of the titanium-implanted alumina was used for direct visualization of the nanoparticles formed. The measured conductivity of the buried layer is explained by percolation theory. We determine that the saturation dose, φ{sub 0}, the maximum implantation dose for which the nanocomposite material still remains a composite, is φ{sub 0} = 2.2 × 10{sup 16 }cm{sup −2}, and the corresponding saturation conductivity is σ{sub 0} = 480 S/m. The percolation dose φ{sub c}, below which the nanocomposite still has basically the conductivity of the alumina matrix, was found to be φ{sub c} = 0.84 × 10{sup 16 }cm{sup −2}. The experimental results are discussed and compared with a percolation theory model.

  1. Ion-implanted planar-buried-heterostructure diode laser

    DOE Patents [OSTI]

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1991-01-01

    A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  2. Tunnel oxide passivated contacts formed by ion implantation for...

    Office of Scientific and Technical Information (OSTI)

    Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit ...

  3. Single ion implantation for solid state quantum computer development

    SciTech Connect (OSTI)

    Schenkel, Thomas; Meijers, Jan; Persaud, Arun; McDonald, Joseph W.; Holder, Joseph P.; Schneider, Dieter H.

    2001-12-18

    Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for {sup 31}P{sup q+} ions. When {sup 31}P{sup q+} ions impinge on a wafer surface, their potential energy (9.3 keV for P{sup 15+}) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

  4. Surface acoustic wave probe implant for predicting epileptic seizures

    DOE Patents [OSTI]

    Gopalsami, Nachappa; Kulikov, Stanislav; Osorio, Ivan; Raptis, Apostolos C.

    2012-04-24

    A system and method for predicting and avoiding a seizure in a patient. The system and method includes use of an implanted surface acoustic wave probe and coupled RF antenna to monitor temperature of the patient's brain, critical changes in the temperature characteristic of a precursor to the seizure. The system can activate an implanted cooling unit which can avoid or minimize a seizure in the patient.

  5. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    DOE Patents [OSTI]

    Peercy, P.S.; Land, C.E.

    1980-06-13

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.

  6. Highly Stripped Ion Sources for MeV Ion Implantation

    SciTech Connect (OSTI)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  7. Propulsion and Power Generation Capabilities of a Dense Plasma Focus (DPF) Fusion System for Future Military Aerospace Vehicles

    SciTech Connect (OSTI)

    Knecht, Sean D.; Mead, Franklin B.; Miley, George H.; Froning, David

    2006-01-20

    The objective of this study was to perform a parametric evaluation of the performance and interface characteristics of a dense plasma focus (DPF) fusion system in support of a USAF advanced military aerospace vehicle concept study. This vehicle is an aerospace plane that combines clean 'aneutronic' dense plasma focus (DPF) fusion power and propulsion technology, with advanced 'lifting body'-like airframe configurations utilizing air-breathing MHD propulsion and power technology within a reusable single-stage-to-orbit (SSTO) vehicle. The applied approach was to evaluate the fusion system details (geometry, power, T/W, system mass, etc.) of a baseline p-11B DPF propulsion device with Q = 3.0 and thruster efficiency, {eta}prop = 90% for a range of thrust, Isp and capacitor specific energy values. The baseline details were then kept constant and the values of Q and {eta}prop were varied to evaluate excess power generation for communication systems, pulsed-train plasmoid weapons, ultrahigh-power lasers, and gravity devices. Thrust values were varied between 100 kN and 1,000 kN with Isp of 1,500 s and 2,000 s, while capacitor specific energy was varied from 1 - 15 kJ/kg. Q was varied from 3.0 to 6.0, resulting in gigawatts of excess power. Thruster efficiency was varied from 0.9 to 1.0, resulting in hundreds of megawatts of excess power. Resulting system masses were on the order of 10's to 100's of metric tons with thrust-to-weight ratios ranging from 2.1 to 44.1, depending on capacitor specific energy. Such a high thrust/high Isp system with a high power generation capability would allow military versatility in sub-orbital space, as early as 2025, and beyond as early as 2050. This paper presents the results that coincide with a total system mass between 15 and 20 metric tons.

  8. Magnetic Processing A Pervasive Energy Efficient Technology for Next Generation Materials for Aerospace and Specialty Steel Markets

    SciTech Connect (OSTI)

    Mackiewicz-Ludtka, G.; Ludtka, G.M.; Ray, P.; Magee, J.

    2010-09-10

    Thermomagnetic Magnetic Processing is an exceptionally fertile, pervasive and cross-cutting technology that is just now being recognized by several major industry leaders for its significant potential to increase energy efficiency and materials performance for a myriad of energy intensive industries in a variety of areas and applications. ORNL has pioneered the use and development of large magnetic fields in thermomagnetically processing (T-MP) materials for altering materials phase equilibria and transformation kinetics. ORNL has discovered that using magnetic fields, we can produce unique materials responses. T-MP can produce unique phase stabilities & microstructures with improved materials performance for structural and functional applications not achieved with traditional processing techniques. These results suggest that there are unprecedented opportunities to produce significantly enhanced materials properties via atomistic level (nano-) microstructural control and manipulation. ORNL (in addition to others) have shown that grain boundary chemistry and precipitation kinetics are also affected by large magnetic fields. This CRADA has taken advantage of ORNLs unique, custom-designed thermo-magnetic, 9 Tesla superconducting magnet facility that enables rapid heating and cooling of metallic components within the magnet bore; as well as ORNLs expertise in high magnetic field (HMF) research. Carpenter Technologies, Corp., is a a US-based industrial company, that provides enhanced performance alloys for the Aerospace and Specialty Steel products. In this CRADA, Carpenter Technologies, Corp., is focusing on applying ORNLs Thermomagnetic Magnetic Processing (TMP) technology to improve their current and future proprietary materials product performance and open up new markets for their Aerospace and Specialty Steel products. Unprecedented mechanical property performance improvements have been demonstrated for a high strength bainitic alloy industrial

  9. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    DOE Patents [OSTI]

    Land, Cecil E.; Peercy, Paul S.

    1983-01-01

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

  10. High concentration of deuterium in palladium from plasma ion implantation

    SciTech Connect (OSTI)

    Uhm, H.S.; Lee, W.M. )

    1991-11-01

    Based on a theoretical calculation, a new scheme to increase deuterium density in palladium over its initial value is presented. This deuterium enrichment scheme makes use of plasma ion implantation. A cylindrical palladium rod (target) preloaded with deuterium atoms, coated with a diffusion-barrier material, is immersed in a deuterium plasma. The palladium rod is connected to a high-power modulator which provides a series of negative-voltage pulses. During these negative pulses, deuterium ions fall into the target, penetrate the diffusion barrier, and are implanted inside the palladium. For reasonable system parameters allowed by present technology, it is found from theoretical calculations that the saturation deuterium density after prolonged ion implantation can be several times the palladium atomic number density. Assuming an initial deuterium density, {ital n}{sub 0}=4{times}10{sup 22} cm{sup {minus}3}, it is also found that the deuterium density in palladium can triple its original value within a few days of the ion implantation for a reasonable target size. Because of the small diffusion coefficient in palladium, the incoming ions do not diffuse quickly inward, thereby accumulating near the target surface at the beginning of the implantation.

  11. Electrical characterization of ion-implanted 4H-silicon carbide

    SciTech Connect (OSTI)

    Morath, C.P.

    1999-03-01

    Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na-Nd = 5{times}10(sup 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1{times}10(sup 13) to 1{times}10(sup 14)/sq cm at room temperature or 500 C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of 252 and 285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of 1650 C and 1550 C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3{times}10(sup 13)/sq cm. An average peak mobility of 200 sq cm/ V s was found for an Al implanted sample; this is considerably higher than the average peak mobility for the B implanted samples, 100 sq cm/ V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.

  12. Method and apparatus for plasma source ion implantation

    DOE Patents [OSTI]

    Conrad, John R.

    1988-01-01

    Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.

  13. Method and apparatus for plasma source ion implantation

    DOE Patents [OSTI]

    Conrad, J.R.

    1988-08-16

    Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner. 7 figs.

  14. A micro-structured ion-implanted magnonic crystal

    SciTech Connect (OSTI)

    Obry, Bjoern; Pirro, Philipp; Chumak, Andrii V.; Ciubotaru, Florin; Serga, Alexander A.; Hillebrands, Burkard; Braecher, Thomas; Graduate School Materials Science in Mainz, D-67663 Kaiserslautern ; Osten, Julia; Fassbender, Juergen

    2013-05-20

    We investigate spin-wave propagation in a microstructured magnonic-crystal waveguide fabricated by localized ion implantation. The irradiation caused a periodic variation in the saturation magnetization along the waveguide. As a consequence, the spin-wave transmission spectrum exhibits a set of frequency bands, where spin-wave propagation is suppressed. A weak modification of the saturation magnetization by 7% is sufficient to decrease the spin-wave transmission in the band gaps by a factor of 10. These results evidence the applicability of localized ion implantation for the fabrication of efficient micron- and nano-sized magnonic crystals for magnon spintronic applications.

  15. Process for forming one or more substantially pure layers in substrate material using ion implantation

    DOE Patents [OSTI]

    Musket, Ronald G.; Brown, David W.; Munir, Zuhair A.

    1992-01-01

    A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. Also disclosed is an article made by the process.

  16. Process for forming one or more substantially pure layers in substrate material using ion implantation

    DOE Patents [OSTI]

    Musket, R.G.; Brown, D.W.; Munir, Z.A.

    1990-12-11

    A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. 2 figs.

  17. In-vivo orthopedic implant diagnostic device for sensing load, wear, and infection

    DOE Patents [OSTI]

    Evans, III, Boyd McCutchen; Thundat, Thomas G.; Komistek, Richard D.; Dennis, Douglas A.; Mahfouz, Mohamed

    2006-08-29

    A device for providing in vivo diagnostics of loads, wear, and infection in orthopedic implants having at least one load sensor associated with the implant, at least one temperature sensor associated with the implant, at least one vibration sensor associated with the implant, and at least one signal processing device operatively coupled with the sensors. The signal processing device is operable to receive the output signal from the sensors and transmit a signal corresponding with the output signal.

  18. Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

    SciTech Connect (OSTI)

    Feng, Kai; Wang, Yibo; Li, Zhuguo; Chu, Paul K.

    2015-08-15

    Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enriched region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.

  19. Surgical implantation techniques for electronic tags in fish

    SciTech Connect (OSTI)

    Wagner, Glenn N.; Cooke, Steven J.; Brown, Richard S.; Deters, Katherine A.

    2011-01-01

    Intracoelomic implantation of transmitters into fish requires making a surgical incision, incision closure, and other surgery related techniques; however, the tools and techniques used in the surgical process vary widely. We review the available literature and focus on tools and techniques used for conducting surgery on juvenile salmonids because of the large amount of research that is conducted on them. The use of sterilized surgical instruments properly selected for a given size of fish will minimize tissue damage and infection rates, and speed the wound healing of fish implanted with transmitters. For the implantation of transmitters into small fish, the optimal surgical methods include making an incision on the ventral midline along the linea alba (for studies under 1 month), protecting the viscera (by lifting the skin with forceps while creating the incision), and using absorbable monofilament suture with a small-swaged-on swaged-on tapered or reverse-cutting needle. Standardizing the implantation techniques to be used in a study involving particular species and age classes of fish will improve survival and transmitter retention while allowing for comparisons to be made among studies and across multiple years. This review should be useful for researchers working on juvenile salmonids and other sizes and species of fish.

  20. Epitaxial silicide formation on recoil-implanted substrates

    SciTech Connect (OSTI)

    Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

    2005-01-15

    An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

  1. Method for implantation of high dopant concentrations in wide band gap materials

    DOE Patents [OSTI]

    Usov, Igor; Arendt, Paul N.

    2009-09-15

    A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100.degree. C. This combination produces high concentrations of dopants, while minimizing the defect concentration.

  2. Method of making silicon on insalator material using oxygen implantation

    DOE Patents [OSTI]

    Hite, Larry R.; Houston, Ted; Matloubian, Mishel

    1989-01-01

    The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

  3. Medium and high energy phosphorus implants into silicon

    SciTech Connect (OSTI)

    Whalen, P.M.; Lavine, J.P.; Zheng, L.

    1996-12-31

    The present investigation explores MeV phosphorus implants into silicon through an oxide. Secondary ion mass spectrometry (SIMS) provides the experimental depth profiles, which are compared to simulations that include the crystal structure. The calculated results are noticeably shallower than the data. The experimental results do not agree with depth profiles based on published moments. The effect of the oxide thickness is studied with the aid of the simulations and the trends of the moments with oxide thickness are presented.

  4. Ion Implanted Contacts to Semiconductor Devices - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ion Implanted Contacts to Semiconductor Devices National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary To improve solar cell conversion efficiency, researchers have been focused on making improvements to cell contacts in order to decrease the level of carrier recombination at the cell interface. One way to reduce carrier recombination is to passivate the surface of the cell. Surface passivation generally involves either applying another material onto

  5. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

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  6. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    ... (Canoga Park) University of California Burris Park Field Station Dow Chemical ... SITE NAME LOCATION REMARKS California Inst. of Technology Pasadena, CA University of ...

  7. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    ... (,Canoga Park) University of California Burris Park Field Station Dow Chemical ... files. *I SITE NAME LOCATION REMARKS California Inst. of Technology Pasadena, CA ...

  8. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    ... The reported K;;;;se of importing the ore was to prevent its falling into enemy . --- - In August 1942, Eldorado Gold Mines, Ltd., in Ontario attempted to import from the USA ...

  9. THE AEROSPACE CORPORATION 1

    Office of Legacy Management (LM)

    ... Bp,the tf.m hdlilph sot to the docrrwsp the hycim&n . . h;Id liuret ."" fZs??aa end the fim ma on. -' t z . . bt lcmt two Pcmdte ixtiiahera, tm2 gallcln m iter pwq, anif . a. cm ...

  10. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    .%ilc 7900, 955 L*Enfam Plora. S. W.. Washingron. D.C. 20024.2174~ Tekphonr: (202) 488s 7117-03.87.cdy.43 23 September 1987 Mr. Andrew Wallo, III, NE-23 Division of Facility & Site Decommissioning Projects U.S. Department of Energy Genantown, Maryland 20545 Dear Mr. Wallo: ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES The attached elimination recommendation was prepared in accordance' /I- PlL.oE with your suggestion during our meeting on 22 September. The recommendation flo.O-oz

  11. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    CORPORATION Suite 7900, 955 L'Enfan Plaza, S.W., Washington, D.C. 20024-2174, Telephone: (202) 488-6000 7117-03.87.cdy.43 23 September 1987 cA Mr. Andrew Wallo, III, NE-23 C 0o Division of Facility & Site FL 'o-o Decommissioning Projects U.S. Department of Energy j /.o° Germantown, Maryland 20545 A/»O 2 - Dear Mr. Wallo: A0 .5 ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES A ,-O° -1 9.O?- The attached elimination recommendation was prepared in accordance 1L.°~ with your

  12. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    Lie i9w, 9.55 L%n/anl Ph. S. W., Washington. D.C. 20024-2174, Tekphonc (202) 488-6000 7117-03.87.cdy.43 23 September 1987 Mr. Andrew Wallo, III, NE-23 Division of Facility & Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES The attached elimination recommendation was prepared in accordance with your suggestion during our meeting on 22 September. The recommendation includes 26 colleges and

  13. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    363, 955 L' Enfant Plaza. S. W.. Washiq on. DC. 2002~2174. Telephone: (202)' 4&&6OOU 7117-03.87.cdy.43 23 September 1987 CA CAlOL) Mr. Andrew Wallo, III, NE-23 Division of Facility E Site Decommissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear Mr. Wallo: In/ . O-01 r~A.os ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES : M/f).0-oS k1 El.o3- The attached elimination reconuaendation was prepared in accordance' - with your suggestion during our meeting on

  14. THE AEROSPACE CORPORATION /

    Office of Legacy Management (LM)

    / @ St& i900.955 L' E+t Pk. S. W., Washingron. D.C. 20024-2174. Tdephonr: (202) 4884400 7117-03.87.cdy.43 23 September 1987 CA CA,OLf Mr. Andrew'Wallo. III, NE-23 Division of Facility & Site c r-05 Deconnnissioning Projects f-L .0-d U.S. Department of Energy lr\/.QL Germantown, Maryland ,20,54B ., iAl*Oz I., a,:,. :.. ,.. i. ,i < Dear Mr. Wallo: 1hJ *o-o1 flA.QS ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES MA.o-05 rl D.OF The attached elimination recommendation was prepared

  15. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    ... and health of workers in the contractors' plants, and making specific recommendations for ... design and construction of the Clinton and Hanford plants and for operating the latter. ...

  16. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    The period of time the processing was performed is not known. The site also conducted developed research for the VCA processing plants at Naturita and Mexican Hat. The work was ...

  17. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    4000, 955 L' Enfant Plaza, S. W., Washington, D. C. 20024, Telephone: (202) 488-6000 7117-01.85.brf.52 20 November 1985 Mr. Arthur Whitman, NE-23 Division of Facility & Site...

  18. THE AEROSPACE CORPORATION

    Office of Legacy Management (LM)

    Andrew Wallo, III, NE-23 Division of Facility & Site Decommissioning Projects U.S. ... O n the enclosed d i a g r a m skoving the p l a n t la-wilt . & i cr.& t2 , th e letters ...

  19. THE AEROSPACE CORPORATION ,'

    Office of Legacy Management (LM)

    ... lands reputedly owned by the United States Air Force; and on the west by certain lands now ... Buffalo, N. Y. CHEI-TROL POLLUTION SERVICES, INC. (Reputed Tenant) 1 Niagara Square ...

  20. Annealing Behavior of Ion-implanted Nitrogen in D9 Steel

    SciTech Connect (OSTI)

    Arunkumar, J.; David, C.; Nair, K. G. M.; Panigrahi, B. K.; Magudapathy, P.; Kennedy, John

    2011-07-15

    Nitrogen isotope N{sup 15} was implanted at the sub-surface of D9 steel. The resonance nuclear reaction analysis was used to probe the implanted nitrogen as a function of depth. The as-implanted D9 sample was isochronally annealed and by observing the broadening of nitrogen depth profile at various annealing junctures, activation energy for nitrogen diffusion in steel was deduced.

  1. Characterization of an RF plasma ion source for ion implantation

    SciTech Connect (OSTI)

    Kopalidis, Peter M.; Wan Zhimin

    2012-11-06

    A novel inductively coupled RF plasma ion source has been developed for use in a beamline ion implanter. Ion density data have been taken with an array of four Langmuir probes spaced equally at the source extraction arc slit. These provide ion density uniformity information as a function of source pressure, RF power and gas mixture composition. In addition, total extracted ion beam current data are presented for the same conditions. The comparative advantages of the RF source in terms of higher beam current, reduced maintenance and overall productivity improvement compared to a hot cathode source are discussed.

  2. High-Tech Brain Implant Predicts, Prevents Epileptic Seizures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (ANL-IN-08-043) - Energy Innovation Portal High-Tech Brain Implant Predicts, Prevents Epileptic Seizures (ANL-IN-08-043) Argonne National Laboratory Contact ANL About This Technology <p> Prototype of a seven-element cooling probe with cooling head containing inlet and outlet reservoirs for coolant flow.</p> Prototype of a seven-element cooling probe with cooling head containing inlet and outlet reservoirs for coolant flow. Technology Marketing Summary Epilepsy, a seizure

  3. Development of Steel Fastener Nano-Ceramic Coatings for Corrosion...

    Broader source: Energy.gov (indexed) [DOE]

    12 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting lm052osborne2012o.pdf (589.24 KB) More Documents & ...

  4. FeN foils by nitrogen ion-implantation

    SciTech Connect (OSTI)

    Jiang, Yanfeng; Wang, Jian-Ping; Al Mehedi, Md; Fu, Engang; Wang, Yongqiang

    2014-05-07

    Iron nitride samples in foil shape (free standing, 500 nm in thickness) were prepared by a nitrogen ion-implantation method. To facilitate phase transformation, the samples were bonded on the substrate followed by a post-annealing step. By using two different substrates, single crystal Si and GaAs, structural and magnetic properties of iron nitride foil samples prepared with different nitrogen ion fluences were characterized. α″-Fe{sub 16}N{sub 2} phase in iron nitride foil samples was obtained and confirmed by the proposed approach. A hard magnetic property with coercivity up to 780 Oe was achieved for the FeN foil samples bonded on Si substrate. The feasibility of using nitrogen ion implantation techniques to prepare FeN foil samples up to 500 nm thickness with a stable martensitic phase under high ion fluences has been demonstrated. A possible mechanism was proposed to explain this result. This proposed method could potentially be an alternative route to prepare rare-earth-free FeN bulk magnets by stacking and pressing multiple free-standing thick α″-Fe{sub 16}N{sub 2} foils together.

  5. Multi-analyte analysis of saliva biomarkers as predictors of periodontal and pre-implant disease

    DOE Patents [OSTI]

    Braun, Thomas; Giannobile, William V; Herr, Amy E; Singh, Anup K; Shelburne, Charlie

    2015-04-07

    The present invention relates to methods of measuring biomarkers to determine the probability of a periodontal and/or peri-implant disease. More specifically, the invention provides a panel of biomarkers that, when used in combination, can allow determination of the probability of a periodontal and/or peri-implant disease state with extremely high accuracy.

  6. Properties of nitrogen implanted and electron beam annealed bulk ZnO

    SciTech Connect (OSTI)

    Kennedy, J.; Carder, D. A.; Markwitz, A.; Reeves, R. J.

    2010-05-15

    The optical properties of bulk ZnO ion implanted with nitrogen ions, at an energy of 23 keV have been studied as a function of implantation fluence and electron beam (EB) annealing conditions. Nuclear reaction analysis and Raman results have revealed the implanted N concentration and its structural changes with respect to various nitrogen ion fluences. The optical properties of nitrogen implanted bulk ZnO were investigated by low temperature photoluminescence measurements. An enhanced peak at 3.235 eV has been attributed to donor-accepter pair (DAP) emission involving the implanted N acceptor in ZnO. The emission near 3.3085 eV is attributed to a free electron to acceptor transition. We also report a broad band emission feature at {approx}3.09 eV in the nitrogen implanted with 1-2x10{sup 15} ions cm{sup -2} and EB annealed at 800-900 deg. C. This is assigned to a thermally activated nitrogen acceptor transition as it is unique only to nitrogen implanted samples. An ionization energy of 377 meV indicates that this line may correspond to a significantly less shallow acceptor level. In addition an increase in the intensity and dominance of this DAP line in nitrogen implanted samples over the other acceptor transitions was observed with increasing annealing time and temperatures. It is shown that EB annealing offers a method of enhanced nitrogen activation when compared to a more conventional furnace approach.

  7. Mass and charge overlaps in beamline implantation into compound semiconductor materials

    SciTech Connect (OSTI)

    Current, M. I.; Eddy, R.; Hudak, C.; Serfass, J.; Mount, G.

    2012-11-06

    Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions, producing molecular break up and charge exchange in the accelerator beamline, are examined for ion implantation into compound semiconductors. The effects of the choice of plasma gas elements for Be{sup +} implants are examined as an example.

  8. Ion implantation and dynamic recovery of tin-doped indium oxide films

    SciTech Connect (OSTI)

    Shigesato, Yuzo; Paine, D.C.; Haynes, T.E.

    1993-09-01

    The effect of O{sup +} on implantation on the electronic (carrier density, mobility), resistivity and microstructural properties of thin film Sn-doped In{sub 2}O{sub 3} (ITO) was studied. Both polycrystalline (c-) and amorphous (a-) ITO thin films, 200 nm thick, were implanted at substrate temperatures ranging from {minus}196 to 300{degrees} C with 80 keV O{sup +} at doses ranging from 0 to 4.0{times}10{sup 15} cm{sup {minus}2}. X-ray diffraction studies show that polycrystalline ITO remains crystalline even after implantation with 80 keV O{sup +} at {minus}196{degrees}C to a dose of 4.0{times}10{sup 15} cm{sup {minus}2} which suggests that dynamic recovery processes are active in ITO at this low temperature. Although the x-ray diffraction pattern of the polycrystalline ITO remains unchanged with implant dose, the electrical properties were seen to degrade when implanted to a dose of 1.0{times}10{sup 15}cm{sup {minus}2} below 200{degrees}C. In contrast, amorphous ITO films remains amorphous upon ion implantation and shows almost no degradation in resistivity when implanted below 16{degrees}C. The recrystallization temperature of amorphous ITO is about 150{degrees}C in the absence of ion implantation.

  9. Implantable device for in-vivo intracranial and cerebrospinal fluid pressure monitoring

    DOE Patents [OSTI]

    Ericson, Milton N. (Knoxville, TN); McKnight, Timothy E. (Greenback, TN); Smith, Stephen F. (London, TN); Hylton, James O. (Clinton, TN)

    2003-01-01

    The present invention relates to a completely implantable intracranial pressure monitor, which can couple to existing fluid shunting systems as well as other internal monitoring probes. The implant sensor produces an analog data signal which is then converted electronically to a digital pulse by generation of a spreading code signal and then transmitted to a location outside the patient by a radio-frequency transmitter to an external receiver. The implanted device can receive power from an internal source as well as an inductive external source. Remote control of the implant is also provided by a control receiver which passes commands from an external source to the implant system logic. Alarm parameters can be programmed into the device which are capable of producing an audible or visual alarm signal. The utility of the monitor can be greatly expanded by using multiple pressure sensors simultaneously or by combining sensors of various physiological types.

  10. Modeling of electrodes and implantable pulse generator cases for the analysis of implant tip heating under MR imaging

    SciTech Connect (OSTI)

    Acikel, Volkan Atalar, Ergin; Uslubas, Ali

    2015-07-15

    Purpose: The authors’ purpose is to model the case of an implantable pulse generator (IPG) and the electrode of an active implantable medical device using lumped circuit elements in order to analyze their effect on radio frequency induced tissue heating problem during a magnetic resonance imaging (MRI) examination. Methods: In this study, IPG case and electrode are modeled with a voltage source and impedance. Values of these parameters are found using the modified transmission line method (MoTLiM) and the method of moments (MoM) simulations. Once the parameter values of an electrode/IPG case model are determined, they can be connected to any lead, and tip heating can be analyzed. To validate these models, both MoM simulations and MR experiments were used. The induced currents on the leads with the IPG case or electrode connections were solved using the proposed models and the MoTLiM. These results were compared with the MoM simulations. In addition, an electrode was connected to a lead via an inductor. The dissipated power on the electrode was calculated using the MoTLiM by changing the inductance and the results were compared with the specific absorption rate results that were obtained using MoM. Then, MRI experiments were conducted to test the IPG case and the electrode models. To test the IPG case, a bare lead was connected to the case and placed inside a uniform phantom. During a MRI scan, the temperature rise at the lead was measured by changing the lead length. The power at the lead tip for the same scenario was also calculated using the IPG case model and MoTLiM. Then, an electrode was connected to a lead via an inductor and placed inside a uniform phantom. During a MRI scan, the temperature rise at the electrode was measured by changing the inductance and compared with the dissipated power on the electrode resistance. Results: The induced currents on leads with the IPG case or electrode connection were solved for using the combination of the MoTLiM and

  11. Investigation of Donor and Acceptor Ion Implantation in AlN

    SciTech Connect (OSTI)

    Osinsky, Andrei

    2015-09-16

    AlGaN alloys with high Al composition and AlN based electronic devices are attractive for high voltage, high temperature applications, including microwave power sources, power switches and communication systems. AlN is of particular interest because of its wide bandgap of ~6.1eV which is ideal for power electronic device applications in extreme environments which requires high dose ion implantation. One of the major challenges that need to be addressed to achieve full utilization of AlN for opto and microelectronic applications is the development of a doping strategy for both donors and acceptors. Ion implantation is a particularly attractive approach since it allows for selected-area doping of semiconductors due to its high spatial and dose control and its high throughput capability. Active layers in the semiconductor are created by implanting a dopant species followed by very high temperature annealing to reduce defects and thereby activate the dopants. Recovery of implant damage in AlN requires excessively high temperature. In this SBIR program we began the investigation by simulation of ion beam implantation profiles for Mg, Ge and Si in AlN over wide dose and energy ranges. Si and Ge are implanted to achieve the n-type doping, Mg is investigated as a p-type doping. The simulation of implantation profiles were performed in collaboration between NRL and Agnitron using a commercial software known as Stopping and Range of Ions in Matter (SRIM). The simulation results were then used as the basis for ion implantation of AlN samples. The implanted samples were annealed by an innovative technique under different conditions and evaluated along the way. Raman spectroscopy and XRD were used to determine the crystal quality of the implanted samples, demonstrating the effectiveness of annealing in removing implant induced damage. Additionally, SIMS was used to verify that a nearly uniform doping profile was achieved near the sample surface. The electrical characteristics

  12. Versatile, high-sensitivity faraday cup array for ion implanters

    DOE Patents [OSTI]

    Musket, Ronald G.; Patterson, Robert G.

    2003-01-01

    An improved Faraday cup array for determining the dose of ions delivered to a substrate during ion implantation and for monitoring the uniformity of the dose delivered to the substrate. The improved Faraday cup array incorporates a variable size ion beam aperture by changing only an insertable plate that defines the aperture without changing the position of the Faraday cups which are positioned for the operation of the largest ion beam aperture. The design enables the dose sensitivity range, typically 10.sup.11 -10.sup.18 ions/cm.sup.2 to be extended to below 10.sup.6 ions/cm.sup.2. The insertable plate/aperture arrangement is structurally simple and enables scaling to aperture areas between <1 cm.sup.2 and >750 cm.sup.2, and enables ultra-high vacuum (UHV) applications by incorporation of UHV-compatible materials.

  13. Ion implantation of erbium into polycrystalline cadmium telluride

    SciTech Connect (OSTI)

    Ushakov, V. V. Klevkov, Yu. V.; Dravin, V. A.

    2015-05-15

    The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

  14. Structural and electrical properties of In-implanted Ge

    SciTech Connect (OSTI)

    Feng, R. Kremer, F.; Mirzaei, S.; Medling, S. A.; Ridgway, M. C.; Sprouster, D. J.; Decoster, S.; Glover, C. J.; Russo, S. P.

    2015-10-28

    We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.

  15. Thin-film Rechargeable Lithium Batteries for Implantable Devices

    DOE R&D Accomplishments [OSTI]

    Bates, J. B.; Dudney, N. J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  16. Characterization of few-layered graphene grown by carbon implantation

    SciTech Connect (OSTI)

    Lee, Kin Kiong; McCallum, Jeffrey C.; Jamieson, David N.

    2014-02-21

    Graphene is considered to be a very promising material for applications in nanotechnology. The properties of graphene are strongly dependent on defects that occur during growth and processing. These defects can be either detrimental or beneficial to device performance depending on defect type, location and device application. Here we present experimental results on formation of few-layered graphene by carbon ion implantation into nickel films and characteristics of graphene devices formed by graphene transfer and lithographic patterning. Micro-Raman spectroscopy was used to determine the number of graphene layers formed and identify defects arising from the device processing. The graphene films were cleaned by annealing in vacuum. Transport properties of cleaned graphene films were investigated by fabrication of back-gated field-effect transistors, which exhibited high hole and electron mobility of 1935 and 1905 cm2/Vs, respectively.

  17. The local structure and ferromagnetism in Fe-implanted SrTiO? single crystals

    SciTech Connect (OSTI)

    Lobacheva, O. Chavarha, M.; Yiu, Y. M.; Sham, T. K.; Goncharova, L. V.

    2014-07-07

    We report a connection between the local structure of low-level Fe impurities and vacancies as the cause of ferromagnetic behavior observed in strontium titanate single crystals (STO), which were implanted with Fe and Si ions at different doses then annealed in oxygen. The effects of Fe doping and post-implantation annealing of STO were studied by X-ray Absorption Near Edge Structure (XANES) spectroscopy and Superconducting Quantum Interference Device magnetometry. XANES spectra for Fe and Ti K- and L-edge reveal the changes in the local environment of Fe and Ti following the implantation and annealing steps. The annealing in oxygen atmosphere partially healed implantation damages and changed the oxidation state of the implanted iron from metallic Fe? to Fe?/Fe? oxide. The STO single crystals were weak ferromagnets prior to implantation. The maximum saturation moment was obtained after our highest implantation dose of 210? Fe atom/cm, which could be correlated with the metallic Fe? phases in addition to the presence of O/Ti vacancies. After recrystallization annealing, the ferromagnetic response disappears. Iron oxide phases with Fe? and Fe? corresponding to this regime were identified and confirmed by calculations using Real Space Multiple Scattering program (FEFF9).

  18. Conventional Versus Automated Implantation of Loose Seeds in Prostate Brachytherapy: Analysis of Dosimetric and Clinical Results

    SciTech Connect (OSTI)

    Genebes, Caroline; Filleron, Thomas; Graff, Pierre; Jonca, Frdric; Huyghe, Eric; Thoulouzan, Matthieu; Soulie, Michel; Malavaud, Bernard; Aziza, Richard; Brun, Thomas; Delannes, Martine; Bachaud, Jean-Marc

    2013-11-15

    Purpose: To review the clinical outcome of I-125 permanent prostate brachytherapy (PPB) for low-risk and intermediate-risk prostate cancer and to compare 2 techniques of loose-seed implantation. Methods and Materials: 574 consecutive patients underwent I-125 PPB for low-risk and intermediate-risk prostate cancer between 2000 and 2008. Two successive techniques were used: conventional implantation from 2000 to 2004 and automated implantation (Nucletron, FIRST system) from 2004 to 2008. Dosimetric and biochemical recurrence-free (bNED) survival results were reported and compared for the 2 techniques. Univariate and multivariate analysis researched independent predictors for bNED survival. Results: 419 (73%) and 155 (27%) patients with low-risk and intermediate-risk disease, respectively, were treated (median follow-up time, 69.3 months). The 60-month bNED survival rates were 95.2% and 85.7%, respectively, for patients with low-risk and intermediate-risk disease (P=.04). In univariate analysis, patients treated with automated implantation had worse bNED survival rates than did those treated with conventional implantation (P<.0001). By day 30, patients treated with automated implantation showed lower values of dose delivered to 90% of prostate volume (D90) and volume of prostate receiving 100% of prescribed dose (V100). In multivariate analysis, implantation technique, Gleason score, and V100 on day 30 were independent predictors of recurrence-free status. Grade 3 urethritis and urinary incontinence were observed in 2.6% and 1.6% of the cohort, respectively, with no significant differences between the 2 techniques. No grade 3 proctitis was observed. Conclusion: Satisfactory 60-month bNED survival rates (93.1%) and acceptable toxicity (grade 3 urethritis <3%) were achieved by loose-seed implantation. Automated implantation was associated with worse dosimetric and bNED survival outcomes.

  19. Method of making an ion-implanted planar-buried-heterostructure diode laser

    DOE Patents [OSTI]

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1992-01-01

    Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  20. Ion Sources for High Energy Ion Implantation at BNL | U.S. DOE...

    Office of Science (SC) Website

    Ion Sources for High Energy Ion Implantation at BNL Nuclear Physics (NP) NP Home About ... Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building ...

  1. Thermal properties of holmium-implanted gold films for a neutrino mass experiment with cryogenic microcalorimeters

    SciTech Connect (OSTI)

    Prasai, K.; Yanardag, S. Basak; Galeazzi, M.; Uprety, Y.; Alves, E.; Rocha, J.; Bagliani, D.; Biasotti, M.; Gatti, F.; Gomes, M. Ribeiro

    2013-08-15

    In a microcalorimetric neutrino mass experiment using the radioactive decay of {sup 163}Ho, the radioactive material must be fully embedded in the microcalorimeter absorber. One option that is being investigated is to implant the radioactive isotope into a gold absorber, as gold is successfully used in other applications. However, knowing the thermal properties at the working temperature of microcalorimeters is critical for choosing the absorber material and for optimizing the detector performance. In particular, it is paramount to understand if implanting the radioactive material in gold changes its heat capacity. We used a bolometric technique to measure the heat capacity of gold films, implanted with various concentrations of holmium and erbium (a byproduct of the {sup 163}Ho fabrication), in the temperature range 70 mK–300 mK. Our results show that the specific heat capacity of the gold films is not affected by the implant, making this a viable option for a future microcalorimeter holmium experiment.

  2. RHEED, AES and XPS studies of the passive films formed on ion implanted stainless steel

    SciTech Connect (OSTI)

    Clayton, C.R.; Doss, K.G.K.; Wang, Y.F.; Warren, J.B.; Hubler, G.K.

    1981-12-01

    P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

  3. Real-time Optimization Method for Optical Parameters of Ion Implanters

    SciTech Connect (OSTI)

    Ogata, Seiji [ULVAC, Inc., Research and Development Div., 2500 Hagizono Chigasaki Kanagawa 253-8543 (Japan); Nishihashi, Tsutomu; Tonari, Kazuhiko [ULVAC, Inc., Inst. Semiconductor Technology, 1220-1 Suyama Susono Shizuoka 410-1231 (Japan); Yokoo, Hidekazu; Suzuki, Hideo; Hisamune, Takeshi [ULVAC, Inc., Semiconductor Equipment Div. 2, 1220-14 Suyama Susono Shizuoka 410-1231 (Japan); Araki, Masasumi [ULVAC, Inc., Software Development Control Solution Div., Hagizono Chigasaki Kanagawa 253-8543 (Japan)

    2006-11-13

    Real-time optimization for optical parameters, such as applied voltage to the electrostatic quadrupole lens, has been realized by using newly developed high-speed computation algorithm for charged particle beams. The virtual optimization code has been incorporated in the control system of SOPHI-200, which is the ULVAC'S new medium current ion implanter. Automatic setup within 5minutes is achieved for any recipe of implantation.

  4. Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

    SciTech Connect (OSTI)

    Tsukamoto, Katsuhiro; Kuroi, Takashi; Kawasaki, Yoji

    2011-01-07

    Industrial aspects of the evolution of ion implantation technology will be reviewed, and their impact on the semiconductor industry will be discussed. The main topics will be the technology's application to the most advanced, ultra scaled CMOS, and to power devices, as well as productivity improvements in implantation technology. Technological insights into future developments in ion-related technologies for emerging industries will also be presented.

  5. Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond

    SciTech Connect (OSTI)

    Ray, M. P.; Baldwin, J. W.; Butler, J. E.; Pate, B. B.; Feygelson, T. I.

    2011-05-15

    The creation of thin, buried, and electrically conducting layers within an otherwise insulating diamond by annealed ion implantation damage is well known. Establishing facile electrical contact to the shallow buried layer has been an unmet challenge. We demonstrate a new method, based on laser micro-machining (laser ablation), to make reliable electrical contact to a buried implant layer in diamond. Comparison is made to focused ion beam milling.

  6. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    SciTech Connect (OSTI)

    Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean; Lavoie, Christian

    2013-04-29

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  7. An evaluation of the maximum tag burden for implantation of acoustic transmitters in juvenile Chinook salmon

    SciTech Connect (OSTI)

    Brown, Richard S.; Harnish, Ryan A.; Carter, Kathleen M.; Boyd, James W.; Deters, Katherine A.; Eppard, M. B.

    2010-04-01

    Abstract.—The influence of a surgically implanted acoustic micro-transmitter and passive integrated transponder (PIT) tag on the growth and survival of hatchery-reared juvenile Chinook salmon was examined. Growth and survival were compared between treatment (implanted) and control fish within three fork length (FL) size groups (80-89, 90-99, and 100-109 mm). The acoustic micro-transmitter and PIT tag implanted in our study had a combined weight of 0.74 g. Weights of study fish ranged from 4.7 to 16.3 g for treatment fish and from 5.1 to 16.8 g for control fish. The burden for the combined acoustic and PIT tag experienced by implanted fish ranged from 8.8% to 15.7% for the 80-89 mm FL group, 6.0-10.9% for the 90-99 mm FL group, and 4.5-8.6% for the 100-109 mm FL group. Results indicated that growth and survival were size-dependent among implanted juvenile Chinook salmon. Significant differences in growth rate and survival were observed between treatment and control fish in the 80-89 mm FL group. Within this group, growth of fish smaller than 88.5 mm FL (tag burden > 10.0%) was negatively affected by the implantation or presence of an acoustic micro-transmitter and PIT tag. Survival of fish in the 90-99 mm FL group did not differ between treatment and control fish. However, survival of implanted fish within this size group that were smaller than 97.2 mm FL (tag burden > 7.4%) was negatively influenced. These results indicate that the burden of an acoustic micro-transmitter and PIT tag should be maintained at or below about 7.0% for studies that use hatchery-reared juvenile Chinook salmon.

  8. Embedded Ge nanocrystals in SiO{sub 2} synthesized by ion implantation

    SciTech Connect (OSTI)

    Baranwal, V. Pandey, Avinash C.; Gerlach, J. W.; Lotnyk, A.; Rauschenbach, B.; Karl, H.; Ojha, S.; Avasthi, D. K.; Kanjilal, D.

    2015-10-07

    200 nm thick SiO{sub 2} layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples were characterized with time-of-flight secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain depth profiles and concentration of Ge ions. As-implanted samples were annealed at 950 °C for 30 min. Crystalline quality of pristine, as-implanted, and annealed samples was investigated using Raman scattering measurements and the results were compared. Crystalline structure of as-implanted and annealed samples of embedded Ge into SiO{sub 2} matrix was studied using x-ray diffraction. No secondary phase or alloy formation of Ge was detected with x-ray diffraction or Raman measurements. Scanning transmission electron microscope measurements were done to get the nanocrystal size and localized information. The results confirmed that fluence dependent Ge nanocrystals of different sizes are formed in the annealed samples. It is also observed that Ge is slowly diffusing deeper into the substrate with annealing.

  9. Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces

    DOE Patents [OSTI]

    Fetherston, Robert P. , Shamim, Muhammad M. , Conrad, John R.

    1997-12-02

    Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.

  10. Nonlinear effects in defect production by atomic and molecular ion implantation

    SciTech Connect (OSTI)

    David, C. Dholakia, Manan; Chandra, Sharat; Nair, K. G. M.; Panigrahi, B. K.; Amirthapandian, S.; Amarendra, G.; Varghese Anto, C.; Santhana Raman, P.; Kennedy, John

    2015-01-07

    This report deals with studies concerning vacancy related defects created in silicon due to implantation of 200 keV per atom aluminium and its molecular ions up to a plurality of 4. The depth profiles of vacancy defects in samples in their as implanted condition are carried out by Doppler broadening spectroscopy using low energy positron beams. In contrast to studies in the literature reporting a progressive increase in damage with plurality, implantation of aluminium atomic and molecular ions up to Al{sub 3}, resulted in production of similar concentration of vacancy defects. However, a drastic increase in vacancy defects is observed due to Al{sub 4} implantation. The observed behavioural trend with respect to plurality has even translated to the number of vacancies locked in vacancy clusters, as determined through gold labelling experiments. The impact of aluminium atomic and molecular ions simulated using MD showed a monotonic increase in production of vacancy defects for cluster sizes up to 4. The trend in damage production with plurality has been explained on the basis of a defect evolution scheme in which for medium defect concentrations, there is a saturation of the as-implanted damage and an increase for higher defect concentrations.

  11. Peculiarities and application perspectives of metal-ion implants in glasses

    SciTech Connect (OSTI)

    Mazzoldi, P.; Gonella, F.; Arnold, G.W.; Battaglin, G.; Bertoncello, R.

    1993-12-31

    Ion implantation in insulators causes modifications in the refractive-index as a result of radiation damage, phase separation, or compound formation. As a consequence, light waveguides may be formed with interesting applications in the field of optoelectronics. Recently implantation of metals ions (e.g. silver, copper, gold, lead,...) showed the possibility of small radii colloidal particles formation, in a thin surface layer of the glass substrate. These particles exhibit an electron plasmon resonance which depends on the optical constants of the implanted metal and on the refractive-index of the glass host. The non-linear optical properties of such colloids, in particular the enhancement of optical Kerr susceptibility, suggest that the, ion implantation technique may play an important role for the production of all-optical switching devices. In this paper an analysis of the state-of-the-art of the research in this field will be presented in the framework of ion implantation in glass physics and chemistry.

  12. An Efficient Molecular Dynamics Scheme for Predicting Dopant Implant Profiles in Semiconductors

    SciTech Connect (OSTI)

    Beardmore, K.M.; Gronbech-Jensen, N.

    1998-09-15

    The authors present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials. The program incorporates methods for reducing computational overhead, plus a rare event algorithm to give statistical accuracy over several orders of magnitude change in the dopant concentration. The code uses a molecular dynamics (MD) model, instead of the binary collision approximation (BCA) used in implant simulators such as TRIM and Marlowe, to describe ion-target interactions. Atomic interactions are described by a combination of 'many-body' and screened Coulomb potentials. Inelastic energy loss is accounted for using a Firsov model, and electronic stopping is described by a Brandt-Kitagawa model which contains the single adjustable parameter for the entire scheme. Thus, the program is easily extensible to new ion-target combinations with the minimum of tuning, and is predictive over a wide range of implant energies and angles. The scheme is especially suited for calculating profiles due to low energy, large angle implants, and for situations where a predictive capability is required with the minimum of experimental validation. They give examples of using their code to calculate concentration profiles and 2D 'point response' profiles of dopants in crystalline silicon, silicon-germanium blends, and gallium-arsenide. They can predict the experimental profiles over five orders of magnitude for <100> and <110> channeling and for non-channeling implants at energies up to hundreds of keV.

  13. Compositional and Structural Study of Gd Implanted ZnO Films

    SciTech Connect (OSTI)

    Murmu, Peter P.; Kennedy, John V.; Markwitz, Andreas; Ruck, Ben J.

    2009-07-23

    We report a compositional and structural study of ZnO films implanted with 30 keV Gd ions. The depth profile of the implanted ions, measured by Rutherford backscattering spectrometry, matches predictions of DYNAMIC-TRIM calculations. However, after annealing at temperatures above 550 deg. C the Gd ions are observed to migrate towards the bulk, and at the same time atomic force microscope images of the film surfaces show significant roughening. Raman spectroscopy shows that the annealed films have a reduced number of crystalline defects. The overall results are useful for developing an implantation-annealing regime to produce well characterized samples to investigate magnetism in the ZnO:Gd system.

  14. Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

    2010-08-01

    We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

  15. Patterned Exfoliation of GaAs Based on Masked Helium Implantation and Subsequent Rapid Thermal Annealing

    SciTech Connect (OSTI)

    Woo, H. J.; Choi, H. W.; Kim, G. D.; Hong, W.; Kim, J. K.

    2009-03-10

    A method of patterning single crystal GaAs based on ion implantation induced selective area exfoliation is suggested. Samples were implanted with 200-500 keV helium ions to a fluence range of 2-4x10{sup 16} He{sup +}/cm{sup 2} at room temperature through masks of Ni mesh (40 {mu}m opening) or stainless steel wire (50 {mu}m in diameter), and subsequent rapid thermal annealing at 350-500{open_square} resulted in expulsion of ion beam exposed material. The influences of ion energy, ion fluence, implantation temperature, subsequent annealing conditions (temperature and ramp rate), and mask pattern and its orientation with GaAs lattice on the patterned exfoliation were examined.

  16. Effect of exposure environment on surface decomposition of SiC-silver ion implantation diffusion couples

    SciTech Connect (OSTI)

    Gerczak, Tyler J.; Zheng, Guiqui; Field, Kevin G.; Allen, Todd R.

    2014-10-05

    SiC is a promising material for nuclear applications and is a critical component in the construction of tristructural isotropic (TRISO) fuel. A primary issue with TRISO fuel operation is the observed release of 110m Ag from intact fuel particles. The release of Ag has prompted research efforts to directly measure the transport mechanism of Ag in bulk SiC. Recent research efforts have focused primarily on Ag ion implantation designs. The effect of the thermal exposure system on the ion implantation surface has been investigated. Results indicate the utilization of a mated sample geometry and the establishment of a static thermal exposure environment is critical to maintaining an intact surface for diffusion analysis. In conclusion, the nature of the implantation surface and its potential role in Ag diffusion analysis are discussed.

  17. Effect of exposure environment on surface decomposition of SiC-silver ion implantation diffusion couples

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gerczak, Tyler J.; Zheng, Guiqui; Field, Kevin G.; Allen, Todd R.

    2014-10-05

    SiC is a promising material for nuclear applications and is a critical component in the construction of tristructural isotropic (TRISO) fuel. A primary issue with TRISO fuel operation is the observed release of 110m Ag from intact fuel particles. The release of Ag has prompted research efforts to directly measure the transport mechanism of Ag in bulk SiC. Recent research efforts have focused primarily on Ag ion implantation designs. The effect of the thermal exposure system on the ion implantation surface has been investigated. Results indicate the utilization of a mated sample geometry and the establishment of a static thermalmore » exposure environment is critical to maintaining an intact surface for diffusion analysis. In conclusion, the nature of the implantation surface and its potential role in Ag diffusion analysis are discussed.« less

  18. Non-Contact Measurement of Thermal Diffusivity in Ion-Implanted Nuclear Materials

    SciTech Connect (OSTI)

    Hofmann, F.; Mason, D. R.; Eliason, J. K.; Maznev, A. A.; Nelson, K. A.; Dudarev, S. L.

    2015-11-03

    Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damage doses without sample activation. Limited ion-penetration-depth means that only few-micron-thick damaged layers are produced. Substantial effort has been devoted to probing the mechanical properties of these thin implanted layers. Yet, whilst key to reactor design, their thermal transport properties remain largely unexplored due to a lack of suitable measurement techniques. Here we demonstrate non-contact thermal diffusivity measurements in ion-implanted tungsten for nuclear fusion armour. Alloying with transmutation elements and the interaction of retained gas with implantation-induced defects both lead to dramatic reductions in thermal diffusivity. These changes are well captured by our modelling approaches. Our observations have important implications for the design of future fusion power plants.

  19. Non-Contact Measurement of Thermal Diffusivity in Ion-Implanted Nuclear Materials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hofmann, F.; Mason, D. R.; Eliason, J. K.; Maznev, A. A.; Nelson, K. A.; Dudarev, S. L.

    2015-11-03

    Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damage doses without sample activation. Limited ion-penetration-depth means that only few-micron-thick damaged layers are produced. Substantial effort has been devoted to probing the mechanical properties of these thin implanted layers. Yet, whilst key to reactor design, their thermal transport properties remain largely unexplored due to a lack of suitable measurement techniques. Here we demonstrate non-contact thermal diffusivity measurements in ion-implanted tungsten for nuclear fusion armour. Alloying withmore » transmutation elements and the interaction of retained gas with implantation-induced defects both lead to dramatic reductions in thermal diffusivity. These changes are well captured by our modelling approaches. Our observations have important implications for the design of future fusion power plants.« less

  20. Performance improvement of silicon nitride ball bearings by ion implantation. CRADA final report

    SciTech Connect (OSTI)

    Williams, J.M.; Miner, J.

    1998-03-01

    The present report summarizes technical results of CRADA No. ORNL 92-128 with the Pratt and Whitney Division of United Technologies Corporation. The stated purpose of the program was to assess the 3effect of ion implantation on the rolling contact performance of engineering silicon nitride bearings, to determine by post-test analyses of the bearings the reasons for improved or reduced performance and the mechanisms of failure, if applicable, and to relate the overall results to basic property changes including but not limited to swelling, hardness, modulus, micromechanical properties, and surface morphology. Forty-two control samples were tested to an intended runout period of 60 h. It was possible to supply only six balls for ion implantation, but an extended test period goal of 150 h was used. The balls were implanted with C-ions at 150 keV to a fluence of 1.1 {times} 10{sup 17}/cm{sup 2}. The collection of samples had pre-existing defects called C-cracks in the surfaces. As a result, seven of the control samples had severe spalls before reaching the goal of 60 h for an unacceptable failure rate of 0.003/sample-h. None of the ion-implanted samples experienced engineering failure in 150 h of testing. Analytical techniques have been used to characterize ion implantation results, to characterize wear tracks, and to characterize microstructure and impurity content. In possible relation to C-cracks. It is encouraging that ion implantation can mitigate the C-crack failure mode. However, the practical implications are compromised by the fact that bearings with C-cracks would, in no case, be acceptable in engineering practice, as this type of defect was not anticipated when the program was designed. The most important reason for the use of ceramic bearings is energy efficiency.

  1. Exascale Opportunities for Aerospace Engineering

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    physical fidelity - Panel methods (incompressible, inviscid) : 1960s - Linearized compressible flow methods : 1970s - Non-linear potential flow methods: 1980s - Reynolds averaged...

  2. Characterization of P{sup +} implanted SiO{sub 2} powders

    SciTech Connect (OSTI)

    Kajiyama, Kenji; Suzuki, Yasuo; Kokubo, Tadashi

    1996-12-31

    {sup 31}P ions were implanted into high-purity SiO{sub 2} sphere powders of 20-30{mu}m{phi} at 50keV energy with 1.5{times}10{sup 17}/cm{sup 2} dose utilizing a modified medium-current implanter and, for reference, into SiO{sub 2} plate at 200keV with 1.0{times}10{sup 18}/cm{sup 2} utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5{mu}m{phi} Cs{sup +} primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and {mu}-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water.

  3. Third Order Optical Nonlinearity of Colloidal Metal Nanoclusters Formed by MeV Ion Implantation

    SciTech Connect (OSTI)

    Sarkisov, S. S.; Williams, E.; Curley, M.; Ila, D.; Venkateswarlu, P.; Poker, D. B.; Hensley, D. K.

    1997-10-01

    We report the results of characterization of nonlinear refractive index of the composite material produced by MeV Ag ion implantation of LiNbO{sub 3} crystal (z-cut). The material after implantation exhibited a linear optical absorption spectrum with the surface plasmon peak near 430 nm attributed to the colloidal silver nanoclusters. Heat treatment of the material at 500 deg C caused a shift of the absorption peak to 550 nm. The nonlinear refractive index of the sample after heat treatment was measured in the region of the absorption peak with the Z-scan technique using a tunable picosecond laser source (4.5 ps pulse width).The experimental data were compared against the reference sample made of MeV Cu implanted silica with the absorption peak in the same region. The nonlinear index of the Ag implanted LiNbO{sub 3} sample produced at five times less fluence is on average two times greater than that of the reference.

  4. Development of high productivity medium current ion implanter 'EXCEED 3000AH Evo2'

    SciTech Connect (OSTI)

    Ikejiri, T.; Hamamoto, N.; Hisada, S.; Iwasawa, K.; Kawakami, K.; Kokuryu, K.; Miyamoto, N.; Nogami, T.; Sakamoto, T.; Sasada, Y.; Tanaka, K.; Yamamoto, Y.; Yamashita, T. [Nissin Ion Equipment Co., LTD., 575, Kuze-tonoshiro-cho, Minami-ku, Kyoto, 601-8205 (Japan)

    2011-01-07

    High productivity medium current ion implanter 'EXCEED 3000AH Evo2' is developed. In semiconductor manufacturing field, improvement of the productivity is continuously required. Especially mass production lines recently tend to use low energy beam and 2 pass implant for higher throughput. The 'Evo2' has been developed in an effort to fulfill these requirements. The 'Evo2' increases low energy beam current by 150 to 250% by applying electrostatic einzel lens called 'V-lens' installed at the exit of the Collimator magnet. This lens is also able to control the beam incident angle by adjusting the upper and lower electrode's voltages independently. Besides, mechanical scanning speed is enhanced to minimize process time of 2 pass implant, while also frequency of the fast beam scanning is enhanced to keep dose uniformity. In addition, a vacuum pumping capability at the target chamber is enhanced to reduce a vacuum waiting time during processing photo-resist wafers. This improvement achieved to reduce process time by 40% for a specific recipe. Furthermore, a modified Indirectly Heated Cathode with electron active Reflection 2 (IHC-R2) ion source which has a long life time filament has been installed. These new elements and/or functions have realized typically 25% improvement of productivity compared to standard EXCEED, and also improve a precise implantation capability.

  5. Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

    SciTech Connect (OSTI)

    Wang, Gang; Zhang, Miao; Liu, Su; Xie, Xiaoming; Ding, Guqiao; Wang, Yongqiang; Chu, Paul K.; Gao, Heng; Ren, Wei; Yuan, Qinghong; Zhang, Peihong; Wang, Xi; Di, Zengfeng

    2015-05-04

    Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.

  6. Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Gang; Zhang, Miao; Liu, Su; Xie, Xiaoming; Ding, Guqiao; Wang, Yongqiang; Chu, Paul K.; Gao, Heng; Ren, Wei; Yuan, Qinghong; et al

    2015-05-04

    Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substratemore » surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.« less

  7. Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy

    DOE Patents [OSTI]

    Boatner, Lynn A.; Rankin, Janet; Thevenard, Paul; Romana, Laurence J.

    1995-01-01

    A method for tailoring or patterning the surface of ceramic articles is provided by implanting ions to predetermined depth into the ceramic material at a selected surface location with the ions being implanted at a fluence and energy adequate to damage the lattice structure of the ceramic material for bi-axially straining near-surface regions of the ceramic material to the predetermined depth. The resulting metastable near-surface regions of the ceramic material are then contacted with energy pulses from collapsing, ultrasonically-generated cavitation bubbles in a liquid medium for removing to a selected depth the ion-damaged near-surface regions containing the bi-axially strained lattice structure from the ceramic body. Additional patterning of the selected surface location on the ceramic body is provided by implanting a high fluence of high-energy, relatively-light ions at selected surface sites for relaxing the bi-axial strain in the near-surface regions defined by these sites and thereby preventing the removal of such ion-implanted sites by the energy pulses from the collapsing ultrasonic cavitation bubbles.

  8. Plasma source ion implantation research and applications at Los Alamos National Laboratory

    SciTech Connect (OSTI)

    Munson, C.P.; Faehl, R.J.; Henins, I.

    1996-12-31

    Plasma Source Ion Implantation research at Los Alamos Laboratory includes direct investigation of the plasma and materials science involved in target surface modification, numerical simulations of the implantation process, and supporting hardware engineering. Target materials of Al, Cr, Cu-Zn, Mg, Ni, Si, Ti, W, and various Fe alloys have been processed using plasmas produced from Ar, NH{sub 3}, N{sub 2}, CH{sub 4}, and C{sub 2}H{sub 2} gases. Individual targets with surface areas as large as {approximately}4 m{sup 2}, or weighing up to 1200 kg, have been treated in the large LANL facility. In collaboration with General Motors and the University of Wisconsin, a process has been developed for application of hard, low friction, diamond-like-carbon layers on assemblies of automotive pistons. Numerical simulations have been performed using a 2{1/2}-D particle- in-cell code, which yields time-dependent implantation energy, dose, and angle of arrival for ions at the target surface for realistic geometries. Plasma source development activities include the investigation of pulsed, inductively coupled sources capable of generating highly dissociated N{sup +} with ion densities n{sub i} {approximately} 10{sup 11}/cm{sup 3}, at {approximately}100 W average input power. Cathodic arc sources have also been used to produce filtered metallic and C plasmas for implantation and deposition either in vacuum, or in conjunction with a background gas for production of highly adherent ceramic coatings.

  9. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    SciTech Connect (OSTI)

    Schrof, Julian Müller, Ralph; Benick, Jan; Hermle, Martin; Reedy, Robert C.

    2015-07-28

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after

  10. Plasma-based ion implantation and deposition: A review of physics,technology, and applications

    SciTech Connect (OSTI)

    Pelletier, Jacques; Anders, Andre

    2005-05-16

    After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

  11. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  12. Temperature dependence of helium-implantation-induced lattice swelling in polycrystalline tungsten: X-ray micro-diffraction and Eigenstrain modelling

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    de Broglie, I.; Beck, C. E.; Liu, W.; Hofmann, Felix

    2015-05-30

    Using synchrotron X-ray micro-diffraction and Eigenstrain analysis the distribution of lattice swelling near grain boundaries in helium-implanted polycrystalline tungsten is quantified. Samples heat-treated at up to 1473 K after implantation show less uniform lattice swelling that varies significantly from grain to grain compared to as-implanted samples. An increase in lattice swelling is found in the vicinity of some grain boundaries, even at depths beyond the implanted layer. As a result, these findings are discussed in terms of the evolution of helium-ion-implantation-induced defects.

  13. Enhanced retained dose uniformity in NiTi spinal correction rod treated by three-dimensional mesh-assisted nitrogen plasma immersion ion implantation

    SciTech Connect (OSTI)

    Lu, Q. Y.; Hu, T.; Kwok, Dixon T. K.; Chu, Paul K.

    2010-05-15

    Owing to the nonconformal plasma sheath in plasma immersion ion implantation of a rod sample, the retained dose can vary significantly. The authors propose to improve the implant uniformity by introducing a metal mesh. The depth profiles obtained with and without the mesh are compared and the implantation temperature at various locations is evaluated indirectly by differential scanning calorimeter. Our results reveal that by using the metal mesh, the retained dose uniformity along the length is greatly improved and the effects of the implantation temperature on the localized mechanical properties of the implanted NiTi shape memory alloy rod are nearly negligible.

  14. Determination of prescription dose for Cs-131 permanent implants using the BED formalism including resensitization correction

    SciTech Connect (OSTI)

    Luo, Wei Molloy, Janelle; Aryal, Prakash; Feddock, Jonathan; Randall, Marcus

    2014-02-15

    Purpose: The current widely used biological equivalent dose (BED) formalism for permanent implants is based on the linear-quadratic model that includes cell repair and repopulation but not resensitization (redistribution and reoxygenation). The authors propose a BED formalism that includes all the four biological effects (4Rs), and the authors propose how it can be used to calculate appropriate prescription doses for permanent implants with Cs-131. Methods: A resensitization correction was added to the BED calculation for permanent implants to account for 4Rs. Using the same BED, the prescription doses with Au-198, I-125, and Pd-103 were converted to the isoeffective Cs-131 prescription doses. The conversion factor F, ratio of the Cs-131 dose to the equivalent dose with the other reference isotope (F{sub r}: with resensitization, F{sub n}: without resensitization), was thus derived and used for actual prescription. Different values of biological parameters such as α, β, and relative biological effectiveness for different types of tumors were used for the calculation. Results: Prescription doses with I-125, Pd-103, and Au-198 ranging from 10 to 160 Gy were converted into prescription doses with Cs-131. The difference in dose conversion factors with (F{sub r}) and without (F{sub n}) resensitization was significant but varied with different isotopes and different types of tumors. The conversion factors also varied with different doses. For I-125, the average values of F{sub r}/F{sub n} were 0.51/0.46, for fast growing tumors, and 0.88/0.77 for slow growing tumors. For Pd-103, the average values of F{sub r}/F{sub n} were 1.25/1.15 for fast growing tumors, and 1.28/1.22 for slow growing tumors. For Au-198, the average values of F{sub r}/F{sub n} were 1.08/1.25 for fast growing tumors, and 1.00/1.06 for slow growing tumors. Using the biological parameters for the HeLa/C4-I cells, the averaged value of F{sub r} was 1.07/1.11 (rounded to 1.1), and the averaged value of F

  15. Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2 (Journal...

    Office of Scientific and Technical Information (OSTI)

    Title: Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2 MAX phases (M: early transition metal; A: elements in group 13 or 14; X: C or N), such as titanium silicon carbide ...

  16. Effects of helium implantation on the tensile properties and microstructure of Ni₇₃P₂₇ metallic glass nanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liontas, Rachel; Gu, X. Wendy; Fu, Engang; Wang, Yongqiang; Li, Nan; Mara, Nathan; Greer, Julia R.

    2014-09-10

    We report fabrication and nanomechanical tension experiments on as-fabricated and helium-implanted ~130 nm diameter Ni₇₃P₂₇ metallic glass nano-cylinders. The nano-cylinders were fabricated by a templated electroplating process and implanted with He⁺ at energies of 50, 100, 150, and 200 keV to create a uniform helium concentration of ~3 at. % throughout the nano-cylinders. Transmission electron microscopy (TEM) imaging and through-focus analysis reveal that the specimens contained ~2 nm helium bubbles distributed uniformly throughout the nano-cylinder volume. In-situ tensile experiments indicate that helium-implanted specimens exhibit enhanced ductility as evidenced by a 2-fold increase in plastic strain over as-fabricated specimens, with nomore » sacrifice in yield and ultimate tensile strengths. This improvement in mechanical properties suggests that metallic glasses may actually exhibit a favorable response to high levels of helium implantation.« less

  17. Effects of helium implantation on the tensile properties and microstructure of Ni??P?? metallic glass nanostructures

    SciTech Connect (OSTI)

    Liontas, Rachel; Gu, X. Wendy; Fu, Engang; Wang, Yongqiang; Li, Nan; Mara, Nathan; Greer, Julia R.

    2014-09-10

    We report fabrication and nanomechanical tension experiments on as-fabricated and helium-implanted ~130 nm diameter Ni??P?? metallic glass nano-cylinders. The nano-cylinders were fabricated by a templated electroplating process and implanted with He? at energies of 50, 100, 150, and 200 keV to create a uniform helium concentration of ~3 at. % throughout the nano-cylinders. Transmission electron microscopy (TEM) imaging and through-focus analysis reveal that the specimens contained ~2 nm helium bubbles distributed uniformly throughout the nano-cylinder volume. In-situ tensile experiments indicate that helium-implanted specimens exhibit enhanced ductility as evidenced by a 2-fold increase in plastic strain over as-fabricated specimens, with no sacrifice in yield and ultimate tensile strengths. This improvement in mechanical properties suggests that metallic glasses may actually exhibit a favorable response to high levels of helium implantation.

  18. Si?-implanted Si-wire waveguide photodetectors for the mid-infrared

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Souhan, Brian; Lu, Ming; Grote, Richard R.; Chen, Christine P.; Huang, Hsu-Cheng; Driscoll, Jeffrey B.; Stein, Aaron; Bakhru, Hassaram; Bergman, Keren; Green, William M. J.; et al

    2014-10-28

    CMOS-compatible Si?-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 m are demonstrated. Responsivities of 9.9 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 m-length p-i-n device is measured to be ~1.7 GHz formorea wavelength of ? = 2.2 m, thus potentially opening up new communication bands for photonic integrated circuits.less

  19. Laser induced diffusion of ion-implanted bismuth in fused silica

    SciTech Connect (OSTI)

    Park, S.Y.; Weeks, R.A.; Zuhr, R.A.

    1994-12-31

    The near surface regions of optical grade fused silica discs (Spectrosil A) were modified by implantation with bismuth ions at 160 and 320 keV and at room temperature. The glasses implanted with a nominal dose of 6 {times} l0{sup 16} Bi{sup 2+} ions/cm{sup 2} were subsequently annealed with a 5 eV KrF pulsed excimer laser and by a furnace in oxygen atmosphere. Rutherford backscattering and optical absorption were measured before and after the anneals. Backscattering profiles after laser anneal showed shifts of the profiles toward the surface with decrease in retained dose. We attribute the diffusion of bismuth to Soret effect. Profiles of furnace annealed samples showed that the diffusion was both toward and away from the surface.

  20. Stretchable nanocomposite electrodes with tunable mechanical properties by supersonic cluster beam implantation in elastomers

    SciTech Connect (OSTI)

    Borghi, F.; Podestà, A.; Milani, P.; Melis, C.; Colombo, L.; Ghisleri, C.; Ravagnan, L.

    2015-03-23

    We demonstrate the fabrication of gold-polydimethylsiloxane nanocomposite electrodes, by supersonic cluster beam implantation, with tunable Young's modulus depending solely on the amount of metal clusters implanted in the elastomeric matrix. We show both experimentally and by atomistic simulations that the mechanical properties of the nanocomposite can be maintained close to that of the bare elastomer for significant metal volume concentrations. Moreover, the elastic properties of the nanocomposite, as experimentally characterized by nanoindentation and modeled with molecular dynamics simulations, are also well described by the Guth-Gold classical model for nanoparticle-filled rubbers, which depends on the presence, concentration, and aspect ratio of metal nanoparticles, and not on the physical and chemical modification of the polymeric matrix due to the embedding process. The elastic properties of the nanocomposite can therefore be determined and engineered a priori, by controlling only the nanoparticle concentration.

  1. Isotope effects on desorption kinetics of hydrogen isotopes implanted into stainless steel by glow discharge

    SciTech Connect (OSTI)

    Matsuyama, M.; Kondo, M.; Noda, N.; Tanaka, M.; Nishimura, K.

    2015-03-15

    In a fusion device the control of fuel particles implies to know the desorption rate of hydrogen isotopes by the plasma-facing materials. In this paper desorption kinetics of hydrogen isotopes implanted into type 316L stainless steel by glow discharge have been studied by experiment and numerical calculation. The temperature of a maximum desorption rate depends on glow discharge time and heating rate. Desorption spectra observed under various experimental conditions have been successfully reproduced by numerical simulations that are based on a diffusion-limited process. It is suggested, therefore, that desorption rate of a hydrogen isotope implanted into the stainless steel is limited by a diffusion process of hydrogen isotope atoms in bulk. Furthermore, small isotope effects were observed for the diffusion process of hydrogen isotope atoms. (authors)

  2. Channeling Doping Profiles Studies for Small Incident Angle Implantation into Silicon Wafers

    SciTech Connect (OSTI)

    Guo, B.N.; Variam, N.; Jeong, U.; Mehta, S.; Posselt, M.; Lebedev, A.

    2003-08-26

    Traditional de-channeling dopant profiles in the silicon crystal wafers have been achieved by tilting the wafer away from the incident beam. As feature sizes of device shrink, the advantages for channeled doping profiles for implants with small or near zero degree incident angles are being recognized. For example, high-energy CMOS well spacing limitations caused by shadowing and encroachment of the ion beam by photoresist mask can be avoided for near zero degree incident implants. Accurate models of channeled profiles are essential to predict the device performance. This paper mainly discusses the damage effect on channeled dopant profiles. Especially, damage effects on channeled dopant profiles are correlated to ThermaWave (TW) measurements. It is demonstrated that there is a critical dose at which the damage effects have to be considered for channeled dopant profile evolvements.

  3. Beryllium-7 Implantation in Plastics for Prosthesis Wear Studies | U.S. DOE

    Office of Science (SC) Website

    Office of Science (SC) Beryllium-7 Implantation in Plastics for Prosthesis Wear Studies Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science Applications of Nuclear Science Archives Small Business Innovation Research / Small Business Technology Transfer Funding Opportunities Nuclear Science Advisory Committee (NSAC) Community Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building

  4. Ion Sources for High Energy Ion Implantation at BNL | U.S. DOE Office of

    Office of Science (SC) Website

    Science (SC) Ion Sources for High Energy Ion Implantation at BNL Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science Applications of Nuclear Science Archives Small Business Innovation Research / Small Business Technology Transfer Funding Opportunities Nuclear Science Advisory Committee (NSAC) Community Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave.,

  5. Everolimus-induced Pneumonitis after Drug-eluting Stent Implantation: A Case Report

    SciTech Connect (OSTI)

    Sakamoto, Susumu Kikuchi, Naoshi; Ichikawa, Atsuo; Sano, Go; Satoh, Keita; Sugino, Keishi; Isobe, Kazutoshi; Takai, Yujiro; Shibuya, Kazutoshi; Homma, Sakae

    2013-08-01

    Despite the wide use of everolimus as an antineoplastic coating agent for coronary stents to reduce the rate of restenosis, little is known about the health hazards of everolimus-eluting stents (EES). We describe a case of pneumonitis that developed 2 months after EES implantation for angina. Lung pathology demonstrated an organizing pneumonia pattern that responded to corticosteroid therapy. Although the efficacy of EES for ischemic heart disease is well established, EES carries a risk of pneumonitis.

  6. Implantable devices having ceramic coating applied via an atomic layer deposition method

    DOE Patents [OSTI]

    Liang, Xinhua; Weimer, Alan W.; Bryant, Stephanie J.

    2016-03-08

    Substrates coated with films of a ceramic material such as aluminum oxides and titanium oxides are biocompatible, and can be used in a variety of applications in which they are implanted in a living body. The substrate is preferably a porous polymer, and may be biodegradable. An important application for the ceramic-coated substrates is as a tissue engineering scaffold for forming artificial tissue.

  7. Remote Sensing and In-Situ Observations of Arctic Mixed-Phase and Cirrus Clouds Acquired During Mixed-Phase Arctic Cloud Experiment: Atmospheric Radiation Measurement Uninhabited Aerospace Vehicle Participation

    SciTech Connect (OSTI)

    McFarquhar, G.M.; Freer, M.; Um, J.; McCoy, R.; Bolton, W.

    2005-03-18

    The Atmospheric Radiation Monitor (ARM) uninhabited aerospace vehicle (UAV) program aims to develop measurement techniques and instruments suitable for a new class of high altitude, long endurance UAVs while supporting the climate community with valuable data sets. Using the Scaled Composites Proteus aircraft, ARM UAV participated in Mixed-Phase Arctic Cloud Experiment (M-PACE), obtaining unique data to help understand the interaction of clouds with solar and infrared radiation. Many measurements obtained using the Proteus were coincident with in-situ observations made by the UND Citation. Data from M-PACE are needed to understand interactions between clouds, the atmosphere and ocean in the Arctic, critical interactions given large-scale models suggest enhanced warming compared to lower latitudes is occurring.

  8. High-performance carbon nanotube-implanted mesoporous carbon spheres for supercapacitors with low series resistance

    SciTech Connect (OSTI)

    Yi, Bin; Chen, Xiaohua; Guo, Kaimin; Xu, Longshan; Chen, Chuansheng; Yan, Haimei; Chen, Jianghua

    2011-11-15

    Research highlights: {yields} CNTs-implanted porous carbon spheres are prepared by using gelatin as soft template. {yields} Homogeneously distributed CNTs form a well-develop network in carbon spheres. {yields} CNTs act as a reinforcing backbone assisting the formation of pore structure. {yields} CNTs improve electrical conductivity and specific capacitance of supercapacitor. -- Abstract: Carbon nanotube-implanted mesoporous carbon spheres were prepared by an easy polymerization-induced colloid aggregation method using gelatin as a soft template. Scanning electron microscopy, transmission electron microscopy and nitrogen adsorption-desorption measurements reveal that the materials are mesoporous carbon spheres, with a diameter of {approx}0.5-1.0 {mu}m, a specific surface area of 284 m{sup 2}/g and average pore size of 3.9 nm. Using the carbon nanotube-implanted mesoporous carbon spheres as electrode material for supercapacitors in an aqueous electrolyte solution, a low equivalent series resistance of 0.83 {Omega} cm{sup 2} and a maximum specific capacitance of 189 F/g with a measured power density of 8.7 kW/kg at energy density of 6.6 Wh/kg are obtained.

  9. Spin-dependent recombination at arsenic donors in ion-implanted silicon

    SciTech Connect (OSTI)

    Franke, David P. Brandt, Martin S.; Otsuka, Manabu; Matsuoka, Takashi; Itoh, Kohei M.; Vlasenko, Leonid S.; Vlasenko, Marina P.

    2014-09-15

    Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination using microwave photoconductivity and electrically detected magnetic resonance monitoring the direct current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance, in particular, of As in weak magnetic fields and at low resonance frequencies (401200 MHz), where high-field-forbidden transitions between the magnetic sublevels can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.

  10. Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

    SciTech Connect (OSTI)

    D'Costa, Vijay Richard Yeo, Yee-Chia

    2015-02-21

    Spectroscopic ellipsometry with photon energy in the 0.045–0.65 eV range was used to investigate germanium samples implanted with 30 keV phosphorus ions and annealed at 700 °C. The infrared response of implanted layers is dominated by free carrier absorption which is modeled using a Drude oscillator. The carrier concentration profiles were modeled using an error function, and compared with those obtained by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. In the flat region of the carrier concentration profile, average carrier concentration and mobility of 1.40 × 10{sup 19} cm{sup −3} and 336 cm{sup 2}V{sup −1}s{sup −1}, respectively, were obtained. A phosphorus diffusivity of ∼1.2 × 10{sup −13} cm{sup 2}/s was obtained. The mobility versus carrier concentration relationships obtained for the implanted samples are close to the empirical relationship for bulk Ge.

  11. From plasma immersion ion implantation to deposition: A historical perspective on principles and trends

    SciTech Connect (OSTI)

    Anders, Andre

    2001-06-14

    Plasma immersion techniques of surface modification are known under a myriad of names. The family of techniques reaches from pure plasma ion implantation, to ion implantation and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias. In the most general sense, all plasma immersion techniques have in common that the surface of a substrate (target) is exposed to plasma and that relatively high substrate bias is applied. The bias is usually pulsed. In this review, the roots of immersion techniques are explored, some going back to the 1800s, followed by a discussion of the groundbreaking works of Adler and Conrad in the 1980s. In the 1990s, plasma immersion techniques matured in theoretical understanding, scaling, and the range of applications. First commercial facilities are now operational. Various immersion concepts are compiled and explained in this review. While gas (often nitrogen) ion implantation dominated the early years, film-forming immersion techniques and semiconductor processing gained importance. In the 1980s and 1990s we have seen exponential growth of the field but signs of slowdown are clear since 1998. Nevertheless, plasma immersion techniques have found, and will continue to have, an important place among surface modification techniques.

  12. Defect production during ion implantation of various A/sub III/B/sub V/ semiconductors

    SciTech Connect (OSTI)

    Wesch, W.; Wendler, E.; Goetz, G.; Kekelidse, N.P.

    1989-01-15

    The present paper gives a survey about the defect generation caused by ion implantation of GaAs, InAs, GaP, and InP. By combining Rutherford backscattering spectrometry, optical spectroscopy, and transmission electron microscopic methods, further information concerning the kinetics of the defect production as well as the type of defects created is obtained. Generally, the defect concentration in the region of implantation parameters investigated can be described by the energy density deposited into nuclear processes. Below critical values of the nuclear deposited energy density in GaAs weakly damaged layers containing point defects and point defect clusters are produced. With increasing nuclear deposited energy density an increasing number of amorphous zones is created due to manifold overlap of the initial defect clusters. The results indicate that in GaAs and InAs already at relatively low implantation temperatures, the amorphization occurs via homogeneous defect nucleation. The results obtained for GaP and InP, on the other hand, point at a remarkable contribution of heterogeneous defect nucleation already at room temperature, leading to amorphization at markedly lower nuclear deposited energy densities in spite of nearly identical values of the nuclear deposited energy. It is therefore concluded that defect recombination and annealing at room temperature is much less pronounced in the phosphides than in the arsenides.

  13. Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

    SciTech Connect (OSTI)

    Do, Woori; Jin, Won-Beom; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June; Kim, Byung-Kuk; Park, Seungho; Hwang, Jin-Ha

    2014-10-15

    Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

  14. Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

    SciTech Connect (OSTI)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-12-16

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

  15. Dose calculation for permanent prostate implants incorporating spatially anisotropic linearly time-resolving edema

    SciTech Connect (OSTI)

    Monajemi, T. T.; Clements, Charles M.; Sloboda, Ron S.

    2011-04-15

    Purpose: The objectives of this study were (i) to develop a dose calculation method for permanent prostate implants that incorporates a clinically motivated model for edema and (ii) to illustrate the use of the method by calculating the preimplant dosimetry error for a reference configuration of {sup 125}I, {sup 103}Pd, and {sup 137}Cs seeds subject to edema-induced motions corresponding to a variety of model parameters. Methods: A model for spatially anisotropic edema that resolves linearly with time was developed based on serial magnetic resonance imaging measurements made previously at our center to characterize the edema for a group of n=40 prostate implant patients [R. S. Sloboda et al., ''Time course of prostatic edema post permanent seed implant determined by magnetic resonance imaging,'' Brachytherapy 9, 354-361 (2010)]. Model parameters consisted of edema magnitude, {Delta}, and period, T. The TG-43 dose calculation formalism for a point source was extended to incorporate the edema model, thus enabling calculation via numerical integration of the cumulative dose around an individual seed in the presence of edema. Using an even power piecewise-continuous polynomial representation for the radial dose function, the cumulative dose was also expressed in closed analytical form. Application of the method was illustrated by calculating the preimplant dosimetry error, RE{sub preplan}, in a 5x5x5 cm{sup 3} volume for {sup 125}I (Oncura 6711), {sup 103}Pd (Theragenics 200), and {sup 131}Cs (IsoRay CS-1) seeds arranged in the Radiological Physics Center test case 2 configuration for a range of edema relative magnitudes ({Delta}=[0.1,0.2,0.4,0.6,1.0]) and periods (T=[28,56,84] d). Results were compared to preimplant dosimetry errors calculated using a variation of the isotropic edema model developed by Chen et al. [''Dosimetric effects of edema in permanent prostate seed implants: A rigorous solution,'' Int. J. Radiat. Oncol., Biol., Phys. 47, 1405-1419 (2000

  16. Fe ion-implanted TiO{sub 2} thin film for efficient visible-light photocatalysis

    SciTech Connect (OSTI)

    Impellizzeri, G. Scuderi, V.; Sanz, R.; Privitera, V.; Romano, L.; Sberna, P. M.; Arcadipane, E.; Scuderi, M.; Nicotra, G.; Bayle, M.; Carles, R.; Simone, F.

    2014-11-07

    This work shows the application of metal ion-implantation to realize an efficient second-generation TiO{sub 2} photocatalyst. High fluence Fe{sup +} ions were implanted into thin TiO{sub 2} films and subsequently annealed up to 550?C. The ion-implantation process modified the TiO{sub 2} pure film, locally lowering its band-gap energy from 3.2?eV to 1.61.9?eV, making the material sensitive to visible light. The measured optical band-gap of 1.61.9?eV was associated with the presence of effective energy levels in the energy band structure of the titanium dioxide, due to implantation-induced defects. An accurate structural characterization was performed by Rutherford backscattering spectrometry, transmission electron microscopy, Raman spectroscopy, X-ray diffraction, and UV/VIS spectroscopy. The synthesized materials revealed a remarkable photocatalytic efficiency in the degradation of organic compounds in water under visible light irradiation, without the help of any thermal treatments. The photocatalytic activity has been correlated with the amount of defects induced by the ion-implantation process, clarifying the operative physical mechanism. These results can be fruitfully applied for environmental applications of TiO{sub 2}.

  17. The Effects of Metallic Implants on Electroporation Therapies: Feasibility of Irreversible Electroporation for Brachytherapy Salvage

    SciTech Connect (OSTI)

    Neal, Robert E.; Smith, Ryan L.; Kavnoudias, Helen; Rosenfeldt, Franklin Ou, Ruchong; Mclean, Catriona A.; Davalos, Rafael V.; Thomson, Kenneth R.

    2013-12-15

    Purpose: Electroporation-based therapies deliver brief electric pulses into a targeted volume to destabilize cellular membranes. Nonthermal irreversible electroporation (IRE) provides focal ablation with effects dependent on the electric field distribution, which changes in heterogeneous environments. It should be determined if highly conductive metallic implants in targeted regions, such as radiotherapy brachytherapy seeds in prostate tissue, will alter treatment outcomes. Theoretical and experimental models determine the impact of prostate brachytherapy seeds on IRE treatments. Materials and Methods: This study delivered IRE pulses in nonanimal, as well as in ex vivo and in vivo tissue, with and in the absence of expired radiotherapy seeds. Electrical current was measured and lesion dimensions were examined macroscopically and with magnetic resonance imaging. Finite-element treatment simulations predicted the effects of brachytherapy seeds in the targeted region on electrical current, electric field, and temperature distributions. Results: There was no significant difference in electrical behavior in tissue containing a grid of expired radiotherapy seeds relative to those without seeds for nonanimal, ex vivo, and in vivo experiments (all p > 0.1). Numerical simulations predict no significant alteration of electric field or thermal effects (all p > 0.1). Histology showed cellular necrosis in the region near the electrodes and seeds within the ablation region; however, there were no seeds beyond the ablation margins. Conclusion: This study suggests that electroporation therapies can be implemented in regions containing small metallic implants without significant changes to electrical and thermal effects relative to use in tissue without the implants. This supports the ability to use IRE as a salvage therapy option for brachytherapy.

  18. The Efficacy of Ultraviolet Radiation for Sterilizing Tools Used for Surgically Implanting Transmitters into Fish

    SciTech Connect (OSTI)

    Walker, Ricardo W.; Markillie, Lye Meng; Colotelo, Alison HA; Gay, Marybeth E.; Woodley, Christa M.; Brown, Richard S.

    2013-02-28

    Telemetry is frequently used to examine the behavior of fish, and the transmitters used are normally surgically implanted into the coelom of fish. Implantation requires the use of surgical tools such as scalpels, forceps, needle holders, and sutures. When several fish are implanted consecutively for large telemetry studies, it is common for surgical tools to be sterilized or, at minimum, disinfected between each use so that pathogens that may be present are not spread among fish. However, autoclaving tools can take a long period of time, and chemical sterilants or disinfectants can be harmful to both humans and fish and have varied effectiveness. Ultraviolet (UV) radiation is commonly used to disinfect water in aquaculture facilities. However, this technology has not been widely used to sterilize tools for surgical implantation of transmitters in fish. To determine its efficacy for this application, Pacific Northwest National Laboratory researchers used UV radiation to disinfect surgical tools (i.e., forceps, needle holder, stab scalpel, and suture) that were exposed to one of four aquatic organisms that typically lead to negative health issues for salmonids. These organisms included Aeromonas salmonicida, Flavobacterium psychrophilum, Renibacterium salmoninarum, and Saprolegnia parasitica. Surgical tools were exposed to the bacteria by dipping them into a confluent suspension of three varying concentrations (i.e., low, medium, high). After exposure to the bacterial culture, tools were placed into a mobile Millipore UV sterilization apparatus. The tools were then exposed for three different time periods—2, 5, or 15 min. S. parasitica, a water mold, was tested using an agar plate method and forceps-pinch method. UV light exposures of 5 and 15 min were effective at killing all four organisms. UV light was also effective at killing Geobacillus stearothermophilus, the organism used as a biological indicator to verify effectiveness of steam sterilizers. These

  19. Local mode spectroscopy of oxygen-implanted GaAs MBE layers

    SciTech Connect (OSTI)

    Alt, H.C.; Muessig, H.; Brugger, H.

    1996-12-31

    Defects introduced by oxygen implantation in silicon-doped GaAs layers grown by molecular beam epitaxy (MBE) have been investigated by Fourier transform infrared absorption spectroscopy at low temperatures. After rapid thermal annealing in the temperature range between 630 and 880 C a local mode is observed at 641 cm{sup {minus}1}. The line shows a shift with both the Si and O isotope ({sup 28}Si/{sup 29}Si and {sup 16}O/{sup 18}O, respectively) mass. Experimental evidence is presented that the silicon-oxygen defect giving rise to this line is responsible for the high-resistive behavior of the MBE layer.

  20. On the dynamics of the damage growth in 5 MeV oxygen-implanted lithium niobate

    SciTech Connect (OSTI)

    Bianconi, M.; Argiolas, N.; Bazzan, M.; Bentini, G.G.; Chiarini, M.; Cerutti, A.; Mazzoldi, P.; Pennestri, G.; Sada, C.

    2005-08-15

    The damage induced by 5 MeV oxygen ion implantation in x-cut congruent LiNbO{sub 3} has been investigated by Rutherford backscattering spectrometry channeling technique. The dynamics of the damage growth has been described by an analytical formula considering the separate contributions of nuclear and electronic energy deposition. It has been hypothesized that the nuclear damage provides the localization of the energy released to the electronic subsystem necessary for the conversion into atomic displacements. The strong influence of the preexisting defects on the damage pileup, foreseen by the analytical formula, has been experimentally verified by pre-implanting the samples with 500 keV oxygen ions. It has been shown that a subsequent 5 MeV oxygen implantation step gives rise to an impressive damage accumulation, eventually leading to the total amorphization of the surface, even at moderate fluences.

  1. Laser annealing of ion implanted CZ silicon for solar cell junction formation. Quarterly report No. 1

    SciTech Connect (OSTI)

    Katzeff, J. S.

    1980-07-01

    A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10..cap omega..-cm resistivity, <100> orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90/sup 0/ bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.

  2. Beam energy tracking system on Optima XEx high energy ion implanter

    SciTech Connect (OSTI)

    David, Jonathan; Satoh, Shu; Wu Xiangyang; Geary, Cindy; Deluca, James

    2012-11-06

    The Axcelis Optima XEx high energy implanter is an RF linac-based implanter with 12 RF resonators for beam acceleration. Even though each acceleration field is an alternating, sinusoidal RF field, the well known phase-focusing principle produces a beam with a sharp quasi-monoenergetic energy spectrum. A magnetic energy filter after the linac further attenuates the low energy continuum in the energy spectrum often associated with RF acceleration. The final beam energy is a function of the phase and amplitude of the 12 resonators in the linac. When tuning a beam, the magnetic energy filter is set to the desired energy, and each linac parameter is tuned to maximize the transmission through the filter. Once a beam is set up, all the parameters are stored in a recipe, which can be easily tuned and has proven to be quite repeatable. The magnetic field setting of the energy filter selects the beam energy from the RF Linac accelerator, and in-situ verification of beam energy in addition to the magnetic energy filter setting has long been desired. An independent energy tracking system was developed for this purpose, using the existing electrostatic beam scanner as a deflector to construct an in-situ electrostatic energy analyzer. This paper will describe the system and performance of the beam energy tracking system.

  3. Production and characterization of a nitrogen-implanted Fe standard to calibrate PIGE measurements

    SciTech Connect (OSTI)

    Rodrigues, C. L.; Silva, T. F.; Added, N.; Santos, H. C.; Tabacniks, M. H.

    2014-11-11

    Three calibration standard was produced by ion implantation of nitrogen in samples of Armco iron (99.7% iron). The samples was irradiated with nitrogen ion beams at several different energies (between 4 keV and 40 keV), and the ion doses were adjusted to obtain an uniform depth profile, using simulations with SRIM code. Two standards, one thick and other a foil (1.62mg/cm{sup 2}), was irradiated at same time with total nominal dose of 6.6×10{sup −16} atoms/cm{sup 2} distributed in a region of 100 nm in depth, with an average concentration of 9.0% nitrogen in iron. The third sample uses the same profile, but with a small dose, 1.1×10{sup −16} atoms/cm{sup 2} and average concentration of 1.5% nitrogen. The characterization of the implanted samples was done using RBS and NRA techniques to quantification of nitrogen.

  4. Synthesis, optical properties, and microstructure of semiconductor nanocrystals formed by ion implantation

    SciTech Connect (OSTI)

    Budai, J.D.; White, C.W.; Withrow, S.P.; Zuhr, R.A.; Zhu, J.G.

    1996-12-01

    High-dose ion implantation, followed by annealing, has been shown to provide a versatile technique for creating semiconductor nanocrystals encapsulated in the surface region of a substrate material. The authors have successfully formed nanocrystalline precipitates from groups IV (Si, Ge, SiGe), III-V (GaAs, InAs, GaP, InP, GaN), and II-VI (CdS, CdSe, CdS{sub x}Se{sub 1{minus}x}, CdTe, ZnS, ZnSe) in fused silica, Al{sub 2}O{sub 3} and Si substrates. Representative examples will be presented in order to illustrate the synthesis, microstructure, and optical properties of the nanostructured composite systems. The optical spectra reveal blue-shifts in good agreement with theoretical estimates of size-dependent quantum-confinement energies of electrons and holes. When formed in crystalline substrates, the nanocrystal lattice structure and orientation can be reproducibly controlled by adjusting the implantation conditions.

  5. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J.; Wang, Y. Q. E-mail: barba@emt.inrs.ca; Ross, G. G.; Barba, D. E-mail: barba@emt.inrs.ca

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  6. Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication

    SciTech Connect (OSTI)

    Wang Langping; Huang Lei; Xie Zhiwen; Wang Xiaofeng; Tang Baoyin

    2008-02-15

    The fourth-generation plasma immersion ion implantation and deposition (PIIID) facility for hybrid and batch treatment was built in our laboratory recently. Comparing with our previous PIIID facilities, several novel designs are utilized. Two multicathode pulsed cathodic arc plasma sources are fixed on the chamber wall symmetrically, which can increase the steady working time from 6 h (the single cathode source in our previous facilities) to about 18 h. Meanwhile, the inner diameter of the pulsed cathodic arc plasma source is increased from the previous 80 to 209 mm, thus, large area metal plasma can be obtained by the source. Instead of the simple sample holder in our previous facility, a complex revolution-rotation sample holder composed of 24 shafts, which can rotate around its axis and adjust its position through revolving around the center axis of the vacuum chamber, is fixed in the center of the vacuum chamber. In addition, one magnetron sputtering source is set on the chamber wall instead of the top cover in the previous facility. Because of the above characteristic, the PIIID hybrid process involving ion implantation, vacuum arc, and magnetron sputtering deposition can be acquired without breaking vacuum. In addition, the PIIID batch treatment of cylinderlike components can be finished by installing these components on the rotating shafts on the sample holder.

  7. Predicting Low Energy Dopant Implant Profiles in Semiconductors using Molecular Dynamics

    SciTech Connect (OSTI)

    Beardmore, K.M.; Gronbech-Jensen, N.

    1999-05-02

    The authors present a highly efficient molecular dynamics scheme for calculating dopant density profiles in group-IV alloy, and III-V zinc blende structure materials. Their scheme incorporates several necessary methods for reducing computational overhead, plus a rare event algorithm to give statistical accuracy over several orders of magnitude change in the dopant concentration. The code uses a molecular dynamics (MD) model to describe ion-target interactions. Atomic interactions are described by a combination of 'many-body' and pair specific screened Coulomb potentials. Accumulative damage is accounted for using a Kinchin-Pease type model, inelastic energy loss is represented by a Firsov expression, and electronic stopping is described by a modified Brandt-Kitagawa model which contains a single adjustable ion-target dependent parameter. Thus, the program is easily extensible beyond a given validation range, and is therefore truly predictive over a wide range of implant energies and angles. The scheme is especially suited for calculating profiles due to low energy and to situations where a predictive capability is required with the minimum of experimental validation. They give examples of using the code to calculate concentration profiles and 2D 'point response' profiles of dopants in crystalline silicon and gallium-arsenide. Here they can predict the experimental profile over five orders of magnitude for <100> and <110> channeling and for non-channeling implants at energies up to hundreds of keV.

  8. Photoluminescence spectroscopy and Rutherford backscattering channeling evaluation of various capping techniques for rapid thermal annealing of ion-implanted ZnSe

    SciTech Connect (OSTI)

    Allen, E.L.; Zach, F.X.; Yu, K.M.; Bourret, E.D.

    1994-05-01

    We report on the effectiveness of proximity caps and PECVD Si{sub 3}N{sub 4}caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 {times} 10{sup 14} cm{sup {minus}2} N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200C and 850C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing, time and temperature may be more important than capping material in determining the optical properties. Effects of various caps, implant and annealing temperature are discussed in terms of photoluminescence spectra.

  9. Malfunctions of Implantable Cardiac Devices in Patients Receiving Proton Beam Therapy: Incidence and Predictors

    SciTech Connect (OSTI)

    Gomez, Daniel R., E-mail: dgomez@mdanderson.org [Department of Radiation Oncology, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Poenisch, Falk [Department of Radiation Physics, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Pinnix, Chelsea C. [Department of Radiation Oncology, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Sheu, Tommy [Department of Experimental Radiation Oncology, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Chang, Joe Y. [Department of Radiation Oncology, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Memon, Nada [Department of Cardiology, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Mohan, Radhe [Department of Radiation Physics, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Rozner, Marc A. [Department of Anesthesiology and Perioperative Medicine, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Dougherty, Anne H. [Department of Cardiology, The University of Texas MD Anderson Cancer Center, Houston, Texas (United States)

    2013-11-01

    Purpose: Photon therapy has been reported to induce resets of implanted cardiac devices, but the clinical sequelae of treating patients with such devices with proton beam therapy (PBT) are not well known. We reviewed the incidence of device malfunctions among patients undergoing PBT. Methods and Materials: From March 2009 through July 2012, 42 patients with implanted cardiac implantable electronic devices (CIED; 28 pacemakers and 14 cardioverter-defibrillators) underwent 42 courses of PBT for thoracic (23, 55%), prostate (15, 36%), liver (3, 7%), or base of skull (1, 2%) tumors at a single institution. The median prescribed dose was 74 Gy (relative biological effectiveness; range 46.8-87.5 Gy), and the median distance from the treatment field to the CIED was 10 cm (range 0.8-40 cm). Maximum proton and neutron doses were estimated for each treatment course. All CIEDs were checked before radiation delivery and monitored throughout treatment. Results: Median estimated peak proton and neutron doses to the CIED in all patients were 0.8 Gy (range 0.13-21 Gy) and 346 Sv (range 11-1100 mSv). Six CIED malfunctions occurred in 5 patients (2 pacemakers and 3 defibrillators). Five of these malfunctions were CIED resets, and 1 patient with a defibrillator (in a patient with a liver tumor) had an elective replacement indicator after therapy that was not influenced by radiation. The mean distance from the proton beam to the CIED among devices that reset was 7.0 cm (range 0.9-8 cm), and the mean maximum neutron dose was 655 mSv (range 330-1100 mSv). All resets occurred in patients receiving thoracic PBT and were corrected without clinical incident. The generator for the defibrillator with the elective replacement indicator message was replaced uneventfully after treatment. Conclusions: The incidence of CIED resets was about 20% among patients receiving PBT to the thorax. We recommend that PBT be avoided in pacing-dependent patients and that patients with any type of CIED receiving

  10. The “accumulation effect” of positrons in the stack of foils, detected by measurements of the positron implantation profile

    SciTech Connect (OSTI)

    Dryzek, Jerzy; Siemek, Krzysztof

    2013-12-14

    The profiles of positrons implanted from the radioactive source {sup 22}Na into a stack of foils and plates are the subject of our experimental and theoretical studies. The measurements were performed using the depth scanning of positron implantation profile method, and the theoretical calculations using the phenomenological multi-scattering model (MSM). Several stacks consisting of silver, gold and aluminum foils, and titanium and germanium plates were investigated. We notice that the MSM describes well the experimental profiles; however when the stack consisting of silver and gold foils, the backscattering and linear absorption coefficients differ significantly from those reported in the literature. We suggest the energy dependency of the backscattering coefficient for silver and gold. In the stacks which comprise titanium and germanium plates, there were observed the features, which indicate the presence of the “accumulation effect” in the experimental implantation profile. This effect was previously detected in implantation profiles in Monte Carlo simulations using the GEANT4 tool kit, and it consists in higher localization of positrons close the interface. We suppose that this effect can be essential for positron annihilation in any heterogeneous materials.

  11. A 3D approximate maximum likelihood solver for localization of fish implanted with acoustic transmitters

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xinya; Deng, Z. Daniel; USA, Richland Washington; Sun, Yannan; USA, Richland Washington; Martinez, Jayson J.; USA, Richland Washington; Fu, Tao; USA, Richland Washington; McMichael, Geoffrey A.; et al

    2014-11-27

    Better understanding of fish behavior is vital for recovery of many endangered species including salmon. The Juvenile Salmon Acoustic Telemetry System (JSATS) was developed to observe the out-migratory behavior of juvenile salmonids tagged by surgical implantation of acoustic micro-transmitters and to estimate the survival when passing through dams on the Snake and Columbia Rivers. A robust three-dimensional solver was needed to accurately and efficiently estimate the time sequence of locations of fish tagged with JSATS acoustic transmitters, to describe in sufficient detail the information needed to assess the function of dam-passage design alternatives. An approximate maximum likelihood solver was developedmore » using measurements of time difference of arrival from all hydrophones in receiving arrays on which a transmission was detected. Field experiments demonstrated that the developed solver performed significantly better in tracking efficiency and accuracy than other solvers described in the literature.« less

  12. Impurity gettering in silicon using cavities formed by helium implantation and annealing

    DOE Patents [OSTI]

    Myers, S.M. Jr.; Bishop, D.M.; Follstaedt, D.M.

    1998-11-24

    Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer. 4 figs.

  13. Impurity gettering in silicon using cavities formed by helium implantation and annealing

    DOE Patents [OSTI]

    Myers, Jr., Samuel M.; Bishop, Dawn M.; Follstaedt, David M.

    1998-01-01

    Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer.

  14. A high voltage pulse power supply for metal plasma immersion ion implantation and deposition

    SciTech Connect (OSTI)

    Salvadori, M. C.; Teixeira, F. S.; Araujo, W. W. R.; Sgubin, L. G.; Sochugov, N. S.; Spirin, R. E.; Brown, I. G.

    2010-12-15

    We describe the design and implementation of a high voltage pulse power supply (pulser) that supports the operation of a repetitively pulsed filtered vacuum arc plasma deposition facility in plasma immersion ion implantation and deposition (Mepiiid) mode. Negative pulses (micropulses) of up to 20 kV in magnitude and 20 A peak current are provided in gated pulse packets (macropulses) over a broad range of possible pulse width and duty cycle. Application of the system consisting of filtered vacuum arc and high voltage pulser is demonstrated by forming diamond-like carbon (DLC) thin films with and without substrate bias provided by the pulser. Significantly enhanced film/substrate adhesion is observed when the pulser is used to induce interface mixing between the DLC film and the underlying Si substrate.

  15. Bone regeneration by implantation of adipose-derived stromal cells expressing BMP-2

    SciTech Connect (OSTI)

    Li Huiwu; Dai Kerong . E-mail: krdai@163.com; Tang Tingting; Zhang Xiaoling; Yan Mengning; Lou Jueren

    2007-05-18

    In this study, we reported that the adipose-derived stromal cells (ADSCs) genetically modified by bone morphogenetic protein 2 (BMP-2) healed critical-sized canine ulnar bone defects. First, the osteogenic and adipogenic differentiation potential of the ADSCs derived from canine adipose tissue were demonstrated. And then the cells were modified by the BMP-2 gene and the expression and bone-induction ability of BMP-2 were identified. Finally, the cells modified by BMP-2 gene were applied to a {beta}-tricalcium phosphate (TCP) carrier and implanted into ulnar bone defects in the canine model. After 16 weeks, radiographic, histological, and histomorphometry analysis showed that ADSCs modified by BMP-2 gene produced a significant increase of newly formed bone area and healed or partly healed all of the bone defects. We conclude that ADSCs modified by the BMP-2 gene can enhance the repair of critical-sized bone defects in large animals.

  16. Late Pseudocoarctation Syndrome After Stent-Graft Implantation For Traumatic Aortic Rupture

    SciTech Connect (OSTI)

    Letocart, Vincent Fau, Georges Tirouvanziam, Ashok; Toquet, Claire; Al Habash, Oussama Guerin, Patrice; Rousseau, Herve; Crochet, Dominique

    2013-06-15

    The present observation illustrates an unusual complication occurring after stent-grafting (S-graft) for aortic isthmus rupture. A 22-year-old patient, treated by S-graft in the emergency department for traumatic aortic rupture, was readmitted 10 months later with pseudocoarctation syndrome. A membrane was found inside the stent-graft that had induced a pseudo-dissection, which caused the pseudocoarctation syndrome. Surgical treatment consisted of removing the stent-graft and membrane and replacing it with a vascular implant. The patient's clinical course was fair. The suggested mechanism was circumferential neoendothelialization of the stent-graft. Dehiscence caused the superior part of the membrane to drop into the lumen of the stent-graft creating a 'false channel' that compressed the 'true lumen' and induced 'pseudocoarctation' syndrome. The cause of the extensive neointimalization remains unexplained. Thoracic aortic stent-grafts require regular follow-up monitoring by angioscan or angio-magnetic resonance imaging.

  17. Performance Assessment of Suture Type in Juvenile Chinook Salmon Surgically Implanted with Acoustic Transmitters

    SciTech Connect (OSTI)

    Deters, Katherine A.; Brown, Richard S.; Carter, Kathleen M.; Boyd, James W.

    2009-02-27

    The objective of this study was to determine the best overall suture material to close incisions from the surgical implantation of Juvenile Salmon Acoustic Telemetry System (JSATS) acoustic microtransmitters in subyearling Chinook salmon Oncorhynchus tshawytscha. The effects of seven suture materials, four surgeons, and two water temperatures on suture retention, incision openness, tag retention, tissue inflammation, and tissue ulceration were quantified. The laboratory study, conducted by researchers at the Pacific Northwest National Laboratory, supports a larger effort under way for the U.S. Army Corps of Engineers, Portland District, aimed at determining the suitability of acoustic telemetry for estimating short- and longer-term (30-60 days) juvenile-salmonid survival at Columbia and Snake River dams and through the lower Columbia River.

  18. A 3D approximate maximum likelihood solver for localization of fish implanted with acoustic transmitters

    SciTech Connect (OSTI)

    Li, Xinya; Deng, Z. Daniel; USA, Richland Washington; Sun, Yannan; USA, Richland Washington; Martinez, Jayson J.; USA, Richland Washington; Fu, Tao; USA, Richland Washington; McMichael, Geoffrey A.; USA, Richland Washington; Carlson, Thomas J.; USA, Richland Washington

    2014-11-27

    Better understanding of fish behavior is vital for recovery of many endangered species including salmon. The Juvenile Salmon Acoustic Telemetry System (JSATS) was developed to observe the out-migratory behavior of juvenile salmonids tagged by surgical implantation of acoustic micro-transmitters and to estimate the survival when passing through dams on the Snake and Columbia Rivers. A robust three-dimensional solver was needed to accurately and efficiently estimate the time sequence of locations of fish tagged with JSATS acoustic transmitters, to describe in sufficient detail the information needed to assess the function of dam-passage design alternatives. An approximate maximum likelihood solver was developed using measurements of time difference of arrival from all hydrophones in receiving arrays on which a transmission was detected. Field experiments demonstrated that the developed solver performed significantly better in tracking efficiency and accuracy than other solvers described in the literature.

  19. C ion-implanted TiO{sub 2} thin film for photocatalytic applications

    SciTech Connect (OSTI)

    Impellizzeri, G. Scuderi, V.; Sanz, R.; Privitera, V.; Romano, L.; Napolitani, E.; Carles, R.

    2015-03-14

    Third-generation TiO{sub 2} photocatalysts were prepared by implantation of C{sup +} ions into 110 nm thick TiO{sub 2} films. An accurate structural investigation was performed by Rutherford backscattering spectrometry, secondary ion mass spectrometry, X-ray diffraction, Raman-luminescence spectroscopy, and UV/VIS optical characterization. The C doping locally modified the TiO{sub 2} pure films, lowering the band-gap energy from 3.3 eV to a value of 1.8 eV, making the material sensitive to visible light. The synthesized materials are photocatalytically active in the degradation of organic compounds in water under both UV and visible light irradiation, without the help of any additional thermal treatment. These results increase the understanding of the C-doped titanium dioxide, helpful for future environmental applications.

  20. A comparison of implantation methods for large PIT tags or injectable acoustic transmitters in juvenile Chinook salmon

    SciTech Connect (OSTI)

    Cook, Katrina V.; Brown, Richard S.; Deng, Zhiqun; Klett, Ryan S.; Li, Huidong; Seaburg, Adam; Eppard, M. B.

    2014-04-15

    The miniaturization of acoustic transmitters may allow greater flexibility in terms of the size and species of fish available to tag. New downsized injectable acoustic tags similar in shape to passive integrated transponder tags can be rapidly injected rather than surgically implanted through a sutured incision, as is current practice. Before wide-scale field use of these injectable transmitters, standard protocols to ensure the most effective and least damaging methods of implantation must be developed. Three implantation methods were tested in various sizes of juvenile Chinook salmon Oncorhynchus tschawytscha. Methods included a needle bevel-down injection, a needle bevel-up injection with a 90-degree rotation, and tag implantation through an unsutured incision. Tagged fish were compared to untagged control groups. Weight and wound area were measured at tagging and every week for 3 weeks; holding tanks were checked daily for mortalities and tag losses. No differences among treatments were found in growth, tag loss, or survival, but wound area was significantly reduced among incision-treated fish. The bevel-up injection had the worst results in terms of tag loss and wound area and also had high mortality. Implantation through an incision resulted in the lowest tag loss but the highest mortality. Fish from the bevel-down treatment group had the least mortality; wound areas also were smaller than the bevel-up treatment group. Cumulatively, the data suggest that the unsutured incision and bevel-down injection methods were the most effective; the drawbacks of both methods are described in detail. However, we further recommend larger and longer studies to find more robust thresholds for tagging size that include more sensitive measures.

  1. Measurement and image processing evaluation of surface modifications of dental implants G4 pure titanium created by different techniques

    SciTech Connect (OSTI)

    Bulutsuz, A. G.; Demircioglu, P. Bogrekci, I.; Durakbasa, M. N.

    2015-03-30

    Foreign substances and organic tissue interaction placed into the jaw in order to eliminate tooth loss involves a highly complex process. Many biological reactions take place as well as the biomechanical forces that influence this formation. Osseointegration denotes to the direct structural and functional association between the living bone and the load-bearing artificial implant's surface. Taking into consideration of the requirements in the manufacturing processes of the implants, surface characterizations with high precise measurement techniques are investigated and thus long-term success of dental implant is emphasized on the importance of these processes in this study. In this research, the detailed surface characterization was performed to identify the dependence of the manufacturing techniques on the surface properties by using the image processing methods and using the scanning electron microscope (SEM) for morphological properties in 3D and Taylor Hobson stylus profilometer for roughness properties in 2D. Three implant surfaces fabricated by different manufacturing techniques were inspected, and a machined surface was included into the study as a reference specimen. The results indicated that different surface treatments were strongly influenced surface morphology. Thus 2D and 3D precise inspection techniques were highlighted on the importance for surface characterization. Different image analyses techniques such as Dark-light technique were used to verify the surface measurement results. The computational phase was performed using image processing toolbox in Matlab with precise evaluation of the roughness for the implant surfaces. The relationship between the number of black and white pixels and surface roughness is presented. FFT image processing and analyses results explicitly imply that the technique is useful in the determination of surface roughness. The results showed that the number of black pixels in the image increases with increase in surface

  2. SU-E-T-546: Use of Implant Volume for Quality Assurance of Low Dose Rate Brachytherapy Treatment Plans

    SciTech Connect (OSTI)

    Wilkinson, D; Kolar, M

    2014-06-01

    Purpose: To analyze the application of volume implant (V100) data as a method for a global check of low dose rate (LDR) brachytherapy plans. Methods: Treatment plans for 335 consecutive patients undergoing permanent seed implants for prostate cancer and for 113 patients treated with plaque therapy for ocular melanoma were analyzed. Plaques used were 54 COMS (10 to 20 mm, notched and regular) and 59 Eye Physics EP917s with variable loading. Plots of treatment time x implanted activity per unit dose versus v100 ^.667 were made. V100 values were obtained using dose volume histograms calculated by the treatment planning systems (Variseed 8.02 and Plaque Simulator 5.4). Four different physicists were involved in planning the prostate seed cases; two physicists for the eye plaques. Results: Since the time and dose for the prostate cases did not vary, a plot of implanted activity vs V100 ^.667 was made. A linear fit with no intercept had an r{sup 2} = 0.978; more than 94% of the actual activities fell within 5% of the activities calculated from the linear fit. The greatest deviations were in cases where the implant volumes were large (> 100 cc). Both COMS and EP917 plaque linear fits were good (r{sup 2} = .967 and .957); the largest deviations were seen for large volumes. Conclusions: The method outlined here is effective for checking planning consistency and quality assurance of two types of LDR brachytherapy treatment plans (temporary and permanent). A spreadsheet for the calculations enables a quick check of the plan in situations were time is short (e.g. OR-based prostate planning)

  3. Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study

    SciTech Connect (OSTI)

    Pepponi, G.; Giubertoni, D.; Gennaro, S.; Bersani, M.; Anderle, M.; Grisenti, R.; Werner, M.; Berg, J. A. van den

    2006-11-13

    Solid phase epitaxial regrowth (SPER) has been investigated in the last few years as a possible method to form ultra shallow dopant distributions in silicon with a high level of electrical. Despite the interest for this process, few investigations were related to arsenic. Apart from the fact that it is easier to form shallow distribution with arsenic than with boron, it is also well known that at the moderate temperatures implied by SPER (500-700 deg. C) arsenic easily deactivates, probably by forming inactive clusters around point defects in silicon. In order to have a better understanding of the SPER process for arsenic implanted silicon in shallow regime, an EXAFS (extended x-ray absorption fine structure) and MEIS (medium energy ion scattering) study is reported in this paper. Silicon samples were implanted at 3 keV with arsenic ions (dose was 2E15 at/cm2 producing a 11 nm amorphous layer) and then annealed in nitrogen at temperatures ranging from 500 to 700 deg. C to have different levels of recrystallisation. From the comparison of the recrystallised fraction as measured by MEIS with the electrical activation measured by Hall effect it results evident that a full regrowth of the lattice is not reflected by a high electrical activation. The activated arsenic corresponds to less than one third of the apparently substitutional dopant for all the samples analyzed. This lack of activation was further investigated by EXAFS: the samples that according to MEIS are fully recrystallised do not reveal a clear local order around As atoms suggesting that either the As atoms are not yet completely relocated within the lattice sites or a deactivation occurred resulting in a more disordered local structure.

  4. Boron Ion Implantation into Silicon by Use of the Boron Vacuum-Arc Plasma Generator

    SciTech Connect (OSTI)

    Williams, J. M.; Klepper, C. C.; Chivers, D. J.; Hazelton, R. C.; Moschella, J. J.; Keitz, M. D.

    2006-11-13

    This paper continues with presentation of experimental work pertaining to use of the boron vacuum arc (a.k.a. cathodic arc) plasma generator for boron doping in semiconductor silicon, particularly with a view to the problems associated with shallow junction doping. Progress includes development of an excellent and novel macroparticle filter and subsequent ion implantations. An important perceived issue for vacuum arc generators is the production of copious macroparticles from cathode material. This issue is more important for cathodes of materials such as carbon or boron, for which the particles are not molten or plastic, but instead are elastic, and tend to recoil from baffles used in particle filters. The present design starts with two vanes of special orientation, so as to back reflect the particles, while steering the plasma between the vanes by use of high countercurrents in the vanes. Secondly, behind and surrounding the vanes is a complex system of baffles that has been designed by a computer-based strategy to ultimately trap the particles for multiple bounces. The statistical transmittance of particles is less than 5 per coulomb of boron ions transmitted at a position just a few centimeters outside the filter. This value appears adequate for the silicon wafer application, but improvement is easily visualized as wafers will be situated much further away when they are treated in systems. A total of 11 silicon samples, comprising an area of 250 cm2, have been implanted. Particles were not detected. Sample biases ranged from 60 to 500 V. Boron doses ranged from 5 x 1014 to 5 x 1015/cm2. Exposure times ranged from 20 to 200 ms for average transmitted boron current values of about 125 mA. SIMS concentration profiles from crystalline material are presented. The results appear broadly favorable in relation to competitive techniques and will be discussed. It is concluded that doubly charged boron ions are not present in the plume.

  5. Electrochemical polishing of thread fastener test specimens of nickel-chromium iron alloys

    DOE Patents [OSTI]

    Kephart, Alan R.

    1991-01-01

    An electrochemical polishing device and method for selective anodic dissolution of the surface of test specimens comprised, for example, of nickel-chromium-iron alloys, which provides for uniform dissolution at the localized sites to remove metal through the use of a coiled wire electrode (cathode) placed in the immediate proximity of the working, surface resulting in a polished and uniform grain boundary.

  6. Dotiki saves money and time with power tool and belt fasteners

    SciTech Connect (OSTI)

    Bargo, K.

    2009-11-15

    The use of a Hilti power tool to improve belt splice installations to minimise downtime is described. 3 photos.

  7. Development of Steel Fastener Nano-Ceramic Coatings for Corrosion Protection of Magnesium Parts (AMD-704)

    Broader source: Energy.gov [DOE]

    2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  8. Composite structures 4; Proceedings of the Fourth International Conference, Paisley College of Technology, Scotland, July 27-29, 1987. Volume 1 - Analysis and design studies

    SciTech Connect (OSTI)

    Marshall, I.H.

    1987-01-01

    Various papers on analysis and design studies in composite structures are presented. The general topics addressed include: space studies, mechanical fasteners, buckling and postbuckling of platework structures, aerospace structures, wind turbine design, pipes and pressure vessels, analysis and buckling of shell-type structures. Also considered are: structural sections and optimization, thermal loading, vibration of platework structures and shell-type structures, dynamic loading, and finite element analysis.

  9. Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin M.

    2004-07-06

    Non-alloyed, low resistivity contacts for semiconductors using Group III-V and Group II-VI compounds and methods of making are disclosed. Co-implantation techniques are disclosed.

  10. Moving metal artifact reduction in cone-beam CT scans with implanted cylindrical gold markers

    SciTech Connect (OSTI)

    Toftegaard, Jakob Fledelius, Walther; Worm, Esben S.; Poulsen, Per R.; Seghers, Dieter; Huber, Michael; Brehm, Marcus; Elstrøm, Ulrik V.

    2014-12-15

    Purpose: Implanted gold markers for image-guided radiotherapy lead to streaking artifacts in cone-beam CT (CBCT) scans. Several methods for metal artifact reduction (MAR) have been published, but they all fail in scans with large motion. Here the authors propose and investigate a method for automatic moving metal artifact reduction (MMAR) in CBCT scans with cylindrical gold markers. Methods: The MMAR CBCT reconstruction method has six steps. (1) Automatic segmentation of the cylindrical markers in the CBCT projections. (2) Removal of each marker in the projections by replacing the pixels within a masked area with interpolated values. (3) Reconstruction of a marker-free CBCT volume from the manipulated CBCT projections. (4) Reconstruction of a standard CBCT volume with metal artifacts from the original CBCT projections. (5) Estimation of the three-dimensional (3D) trajectory during CBCT acquisition for each marker based on the segmentation in Step 1, and identification of the smallest ellipsoidal volume that encompasses 95% of the visited 3D positions. (6) Generation of the final MMAR CBCT reconstruction from the marker-free CBCT volume of Step 3 by replacing the voxels in the 95% ellipsoid with the corresponding voxels of the standard CBCT volume of Step 4. The MMAR reconstruction was performed retrospectively using a half-fan CBCT scan for 29 consecutive stereotactic body radiation therapy patients with 2–3 gold markers implanted in the liver. The metal artifacts of the MMAR reconstructions were scored and compared with a standard MAR reconstruction by counting the streaks and by calculating the standard deviation of the Hounsfield units in a region around each marker. Results: The markers were found with the same autosegmentation settings in 27 CBCT scans, while two scans needed slightly changed settings to find all markers automatically in Step 1 of the MMAR method. MMAR resulted in 15 scans with no streaking artifacts, 11 scans with 1–4 streaks, and 3 scans