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We encourage you to perform a real-time search of NLEBeta
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1

Plasma Immersion Ion Implantation with Solid Targets for Space and Aerospace Applications  

SciTech Connect (OSTI)

This paper describes successful results obtained by a new type of plasma source, named as Vaporization of Solid Targets (VAST), for treatment of materials for space and aerospace applications, by means of plasma immersion ion implantation and deposition (PIII and D). Here, the solid element is vaporized in a high pressure glow discharge, being further ionized and implanted/deposited in a low pressure cycle, with the aid of an extra electrode. First experiments in VAST were run using lithium as the solid target. Samples of silicon and aluminum alloy (2024) were immersed into highly ionized lithium plasma, whose density was measured by a double Langmuir probe. Measurements performed with scanning electron microscopy (SEM) showed clear modification of the cross-sectioned treated silicon samples. X-ray photoelectron spectroscopy (XPS) analysis revealed that lithium was implanted/deposited into/onto the surface of the silicon. Implantation depth profiles may vary according to the condition of operation of VAST. One direct application of this treatment concerns the protection against radiation damage for silicon solar cells. For the case of the aluminum alloy, X-ray diffraction analysis indicated the appearance of prominent new peaks. Surface modification of A12024 by lithium implantation/deposition can lower the coefficient of friction and improve the resistance to fatigue of this alloy. Recently, cadmium was vaporized and ionized in VAST. The main benefit of this element is associated with the improvement of corrosion resistance of metallic substrates. Besides lithium and cadmium, VAST allows to performing PIII and D with other species, leading to the modification of the near-surface of materials for distinct purposes, including applications in the space and aerospace areas.

Oliveira, R. M.; Goncalves, J. A. N.; Ueda, M.; Silva, G. [National Institute for Space Research, PO Box 515, ZIP 12227-010 Sao Jose dos Campos, Sao Paulo (Brazil); Baba, K. [Industrial Technology Center of Nagasaki, 2-1303-8, Ikeda, Omura Nagasaki 856-0026 (Japan)

2009-01-05T23:59:59.000Z

2

Self-locking threaded fasteners  

DOE Patents [OSTI]

A threaded fastener with a shape memory alloy (SMA) coatings on its threads is disclosed. The fastener has special usefulness in high temperature applications where high reliability is important. The SMA coated fastener is threaded into or onto a mating threaded part at room temperature to produce a fastened object. The SMA coating is distorted during the assembly. At elevated temperatures the coating tries to recover its original shape and thereby exerts locking forces on the threads. When the fastened object is returned to room temperature the locking forces dissipate. Consequently the threaded fasteners can be readily disassembled at room temperature but remains securely fastened at high temperatures. A spray technique is disclosed as a particularly useful method of coating of threads of a fastener with a shape memory alloy.

Glovan, Ronald J. (Butte, MT); Tierney, John C. (Butte, MT); McLean, Leroy L. (Butte, MT); Johnson, Lawrence L. (Butte, MT)

1996-01-01T23:59:59.000Z

3

Self-locking threaded fasteners  

DOE Patents [OSTI]

A threaded fastener with a shape memory alloy (SMA) coatings on its threads is disclosed. The fastener has special usefulness in high temperature applications where high reliability is important. The SMA coated fastener is threaded into or onto a mating threaded part at room temperature to produce a fastened object. The SMA coating is distorted during the assembly. At elevated temperatures the coating tries to recover its original shape and thereby exerts locking forces on the threads. When the fastened object is returned to room temperature the locking forces dissipate. Consequently the threaded fasteners can be readily disassembled at room temperature but remains securely fastened at high temperatures. A spray technique is disclosed as a particularly useful method of coating of threads of a fastener with a shape memory alloy. 13 figs.

Glovan, R.J.; Tierney, J.C.; McLean, L.L.; Johnson, L.L.

1996-01-16T23:59:59.000Z

4

Wire brush fastening device  

DOE Patents [OSTI]

A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

Meigs, R.A.

1995-09-19T23:59:59.000Z

5

Development of Steel Fastener Nano-Ceramic Coatings for Corrosion...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Steel Fastener Nano-Ceramic Coatings for Corrosion Protection of Magnesium Parts (AMD-704) Development of Steel Fastener Nano-Ceramic Coatings for Corrosion Protection of Magnesium...

6

Department of Aerospace Engineering  

E-Print Network [OSTI]

AND LIMITED ELECTIVE COURSE SELECTIONS...............................................5 DEPARTMENT OF AEROSPACE.......................................................................... 20 AEROSPACE ENGINEERING COOPERATIVE ED & INTERNSHIP PROGRAM...................22 AEROSPACE

7

Department of Aerospace Engineering  

E-Print Network [OSTI]

ELECTIVE COURSE SELECTIONS .................................5 DEPARTMENT OF AEROSPACE ENGINEERING PROGRAM AEROSPACE ENGINEERING COOPERATIVE ED & INTERNSHIP PROGRAM...................22 AEROSPACE ENGINEERING CO

8

Gutierrez et al 1 Advancements in Fastening System Design for  

E-Print Network [OSTI]

-haul railroads. Reducing life cycle costs of concrete crosstie fastening systems is of paramount importance the development of high-speed passenger rail systems; the need for improved concrete crossties and fasteningGutierrez et al 1 Advancements in Fastening System Design for North American Concrete Crossties

Illinois at Urbana-Champaign, University of

9

DATE: NVLAP LAB CODE: FASTENERS AND METALS APPLICATION (REV. 2012-05-04) PAGE 1 OF 22  

E-Print Network [OSTI]

Embrittlement Hydrogen embrittlement (stress durability) of externally threaded fasteners Hydrogen embrittlement for embrittlement of metallic coated externally threaded fasteners Fatigue Fatigue of full-size threaded fasteners

10

FacultyofAerospaceEngineering Aerospace Masterweeks  

E-Print Network [OSTI]

faster. The technological demands of larger wind turbines, wind farms, integration in the electricity · Wind farm aerodynamics Rotor Design · Aerodynamics · Structure & Composites Electrical Power SystemsFacultyofAerospaceEngineering Aerospace Masterweeks Aerospace Engineering & European Wind Energy

Lindken, Ralph

11

The effects of fastener hole defects  

E-Print Network [OSTI]

) August 1991 ABSTRACT The Effects of Fastener Hole Defects. (August 1991) Scot D. Andrews, B. S. , Texas A8rM University Chair of Advisory Committee: Dr. Orden O. Ochoa The influence of drilling-induced defects, such as delamination, on the fatigue... ambient and elevated temperature wet conditions. Specimens were tested in a bearing tension frame to static failure in order to measure the failure load and to calculate pin bearing stress. From static test results, a fatigue load was selected as 66...

Andrews, Scot D.

1991-01-01T23:59:59.000Z

12

Fasteners -- Preloading test for the detection of hydrogen embrittlement -- Parallel bearing surface method  

E-Print Network [OSTI]

Fasteners -- Preloading test for the detection of hydrogen embrittlement -- Parallel bearing surface method

International Organization for Standardization. Geneva

1999-01-01T23:59:59.000Z

13

AEROSPACE SCIENCES Applied aerodynamics  

E-Print Network [OSTI]

AEROSPACE SCIENCES Applied aerodynamics This year saw significant progress in industry, research labs, and academia in the development of flow-control concepts, novel configuration aerodynamic concepts, and aerodynamic im- provement technologies for enhancing the fuel efficiency and performance

Xu, Kun

14

Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

Mechanical and Aerospace Engineering seminar Three Dimensional Traction Force Microscopy with Applications in Cell Mechanics abstract The interactions between biochemical and mechanical signals during-dimensional measurement techniques are needed to investigate the effect of mechanical properties of the substrate

15

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

Mechanical & Aerospace Engineering An experimental methodology is presented for mechanism verification of physics-based prognosis of mechanical damage, such as fatigue. The proposed experimental methodology includes multi-resolution in-situ mechanical testing, advanced imaging analysis, and mechanism

16

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

Mechanical & Aerospace Engineering This presentation will address the development and transition of advanced structural health management (SHM) technologies from the perspective of understanding and the importance of understanding this role to increase the likelihood for transition of new technologies

17

Faculty of Engineering Aerospace Engineering  

E-Print Network [OSTI]

Faculty of Engineering Aerospace Engineering Canada's aerospace industry is one of the largest. One of the key factors that will continue this success is a steady stream of engineering talent.uwindsor.ca/mame Rigorous, Enriching Programs Our new Aerospace Engineering program at Windsor is an optional stream within

18

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

Mechanical & Aerospace Engineering In the pursuit of developing manned, reusable hypersonic & Energy Arizona State University November 9, 2012 at 1:30pm in SCOB 228 School for Engineering of Matter will experience thermal and mechanical loads. The research presented will discuss advancements in structural

19

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

Mechanical & Aerospace Engineering The development of high-energy storage devices has been one energy capacity over 500 cycles. Teng Ma received his BS degree in Thermal and Power Engineering from Xi and Technology of China in 2009. He is currently a Ph.D. candidate in Mechanical Engineering at School

20

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

in Mechanical Engineering at the School for Engineering of Matter, Transport and Energy, working in Dr. MarcusMechanical & Aerospace Engineering The atomization of a liquid jet by a high speed cross.S.E. degree in mechanical engineering from Amirkabir University of Technology in 2006 and M.S. degree

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

Mechanical and Aerospace Engineering Abstract Solid materials used in energy conversion and storage that couples the mechanical and chemical (or electrochemical) fields in solids via the use of stress-chemo- mechanical theory, two examples of practical interest will be discussed, namely, solid oxide fuel cells

22

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

, and nuclear energy. She is a member of the American Society of Mechanical Engineers (ASME), Fluids EngineeringMechanical & Aerospace Engineering Interfacial flows are multi-material flows comprised of two of the interface between the fluids and the interface physics (like surface tension) needs to be predicted as part

23

aerospace engineering students: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Aerospace Lindken, Ralph 2 Mechanical and Aerospace Engineering Postgraduate Student Physics Websites Summary: & Aerospace Engineering and Naval Architecture & Marine...

24

Unmanned Aerospace Vehicle Workshop  

SciTech Connect (OSTI)

The Unmanned Aerospace Vehicle (UAV) Workshop concentrated on reviewing and refining the science experiments planned for the UAV Demonstration Flights (UDF) scheduled at the Oklahoma Cloud and Radiation Testbed (CART) in April 1994. These experiments were focused around the following sets of parameters: Clear sky, daylight; Clear-sky, night-to-day transition; Clear sky - improve/validate the accuracy of radiative fluxes derived from satellite-based measurements; Daylight, clouds of opportunity; and, Daylight, broken clouds.

Vitko, J. Jr. [Sandia National Labs., Livermore, CA (United States)

1995-04-01T23:59:59.000Z

25

Aerospace Applications for OLED Lighting  

Energy Savers [EERE]

2015 Boeing. All rights reserved. Export Controlled ECCN: 9E991 NLR Aerospace economics drive long development cycles and even longer product lifecycles * Development of a...

26

Comparison of Slender Dowel-Type Fasteners for Slotted-in Steel Plate Connections under Monotonic and Cyclic Loading  

E-Print Network [OSTI]

with threads, nuts and washers on either end, and c) two types of a new commercially available self-drilling on the monotonic and cyclic behavior of dowel-type fasteners, b) compare a new type of fastener, the self- drilling Materials and Wood Technology, University of Massachusetts, Amherst, MA, USA mail@alexschreyer.de Mr

27

Page 1 of 7 Modeling and simulation of sparking in fastening assemblies  

E-Print Network [OSTI]

of these mechanisms depends on the material used for the assembly (for example, metal rib with carbon composite of the bolt and a possible sparking occurrence. INTRODUCTION The massive use of composite materials in modern the electric conductivity of metallic fasteners and the conductivity of composite materials increases

28

Considerations for Mechanistic Design of Concrete Sleepers and Elastic Fastening Systems in North America  

E-Print Network [OSTI]

Center (RailTEC), University of Illinois at Urbana-Champaign (UIUC), Urbana, IL, USA Abstract A sustained not achieve their design life. While initially functional, they ultimately require more frequent maintenance practices for concrete sleeper and fastening system design and improving safety, reliability, and rail

Barkan, Christopher P.L.

29

MACHINING ELIMINATION THROUGH APPLICATION OF THREAD FORMING FASTENERS IN NET SHAPED CAST HOLES  

SciTech Connect (OSTI)

The ultimate objective of this work was to eliminate approximately 30% of the machining performed in typical automotive engine and transmission plants by using thread forming fasteners in as-cast holes of aluminum and magnesium cast components. The primary issues at the source of engineers???????????????¢???????????????????????????????? reluctance to implementing thread forming fasteners in lightweight castings are: * Little proof of consistency of clamp load vs. input torque in either aluminum or magnesium castings. * No known data to understand the effect on consistency of clamp load as casting dies wear. The clamp load consistency concern is founded in the fact that a portion of the input torque used to create clamp load is also used to create threads. The torque used for thread forming may not be consistent due to variations in casting material, hole size and shape due to tooling wear and process variation (thermal and mechanical). There is little data available to understand the magnitude of this concern or to form the basis of potential solutions if the range of clamp load variation is very high (> +/- 30%). The range of variation that can be expected in as-cast hole size and shape over the full life cycle of a high pressure die casting die was established in previous work completed by Pacific Northwest National Laboratory, (PNNL). This established range of variation was captured in a set of 12 cast bosses by designing core pins at the size and draft angles identified in the sited previous work. The cast bosses were cut into ???????????????¢????????????????????????????????nuts???????????????¢??????????????????????????????? that could be used in the Ford Fastener Laboratory test-cell to measure clamp load when a thread forming fastener was driven into a cast nut. There were two sets of experiments run. First, a series of cast aluminum nuts were made reflecting the range of shape and size variations to be expected over the life cycle of a die casting die. Taptite thread forming fasteners, (a widely used thread forming fastener suitable for aluminum applications), were driven into the various cored, as-cast nuts at a constant input torque and resulting clamp loads were recorded continuously. The clamp load data was used to determine the range of clamp loads to be expected. The bolts were driven to failure. The clamp load corresponding to the target input of 18.5 Nm was recorded for each fastener. In a like fashion, a second set of experiments were run with cast magnesium nuts and ALtracs thread forming fasteners, (a widely used thread forming fastener suitable for magnesium applications). Again all clamp loads were recorded and analyzed similarly to the Taptites in aluminum cast nuts. Results from previous work performed on the same test cell for a Battelle project using standard M8 bolts into standard M8 nuts were included as a comparator for a standard bolt and nut application. The results for the thread forming fasteners in aluminum cast holes were well within industry expectations of +/- 30% for out of the box and robustness range te

Cleaver, Ryan J.; Cleaver, Todd H.; Talbott, Richard

2012-05-02T23:59:59.000Z

30

Testing of Compact Bolted Fasteners with Insulation and Friction-Enhanced Shims for NCSX  

SciTech Connect (OSTI)

The fastening of the National Compact Stellarator Experiment's (NCSX) modular coils presented a number of engineering and manufacturing challenges due to the high magnetic forces, need to control induced currents, tight tolerances and restrictive space envelope. A fastening method using high strength studs, jack nuts, insulating spacers, bushings and alumina coated shims was developed which met the requirements. A test program was conducted to verify the design. The tests included measurements of flatness of the spacers, determination of contact area, torque vs. tension of the studs and jack nuts, friction coefficient tests on the alumina and G-10 insulators, electrical tests, and tension relaxation tests due to temperature excursions from room temperature to liquid nitrogen temperatures. This paper will describe the design and the results of the test program.

L. E. Dudek, J.H. Chrzanowski, G. Gettelfinger, P. Heitzenroeder, S. Jurczynski, M. Viola and K. Freudenberg

2009-02-04T23:59:59.000Z

31

Mechanical, Materials, and Aerospace Engineering Department of Mechanical, Materials, and Aerospace Engineering  

E-Print Network [OSTI]

Mechanical, Materials, and Aerospace Engineering Department of Mechanical, Materials, and Aerospace.mmae.iit.edu Chair: Keith Bowman The Department of Mechanical, Materials, and Aerospace Engineering offers several flexible programs in mechanical and aerospace engineering, with five major areas of study: computer

Heller, Barbara

32

Computers and the aerospace engineer  

SciTech Connect (OSTI)

The use of computers in aerospace for design and analysis is described, and examples of project enhancements are presented. NASA is working toward the design of a numerical test cell that will allow integrated, multidisciplinary design, analysis, and optimization of propulsion systems. It is noted that with continuing advances in computer technology, including areas such as three-dimensional computer-aided design, finite element analysis, supercomputers, and artificial intelligence, the possibilities seem limitless for the aerospace engineer. Research projects are currently underway for design and/or reconfiguration of the V-22, B-767, SCRAMJET engines, F-16, and X29A using these techniques.

Trego, L.E.

1990-03-01T23:59:59.000Z

33

New environmental regulation for the aerospace industry: The aerospace NESHAP  

SciTech Connect (OSTI)

40 CFR Part 63, Subpart GG, the National Emission Standard for Hazardous Air Pollutants for Aerospace Manufacturing and Rework Facilities, commonly referred to as the Aerospace NESHAP, was issued on September 1, 1995 and requires compliance by September 1, 1998. The regulation affects any facility that manufactures or reworks commercial, civil, or military aircraft vehicles or components and is a major source of Hazardous Air Pollutants (HAPs). The regulation targets reducing Volatile Organic Compound (VOC) and Hazardous Air Pollutant (HAP) emissions to the atmosphere. Processes affected by the new regulation include aircraft painting, paint stripping, chemical milling masking, solvent cleaning, and spray gun cleaning. Regulatory requirements affecting these processes are summarized, and different compliance options compared in terms of cost-effectiveness and industry acceptance. Strategies to reduce compliance costs and minimize recordkeeping burdens are also presented.

Bauer, J.P.; Gampper, B.P. [Brusn and McDonnell Waste Consultants, Inc., Kansas City, MO (United States); Baker, J.M. [Raytheon Aircraft Co., Wichita, KS (United States)

1997-12-31T23:59:59.000Z

34

GRADUATE STUDIES IN MECHANICAL AND AEROSPACE ENGINEERING Department of Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

A Guide to GRADUATE STUDIES IN MECHANICAL AND AEROSPACE ENGINEERING at Department of Mechanical...................................................................................................... 3 2. Master of Science in Mechanical and Aerospace Engineering ........................................................................................................................ 6 4. Master of Science in Energy Systems Engineering (MSESE

Mohan, Chilukuri K.

35

Department of Mechanical, Materials, and Aerospace Engineering Department of Mechanical, Materials, and Aerospace Engineering  

E-Print Network [OSTI]

Department of Mechanical, Materials, and Aerospace Engineering Department of Mechanical, Materials@mmae.iit.edu www.mmae.iit.edu Chair: Keith Bowman Associate Chair: Kevin Cassel The Department of Mechanical, Materials, and Aerospace Engineering offers several flexible programs in mechanical and aerospace

Heller, Barbara

36

Flexibility in Aerospace and Automotive Component Manufacturing Systems  

E-Print Network [OSTI]

Flexibility in Aerospace and Automotive Component Manufacturing Systems: Practice, Strategy Supervisor #12;2 #12;Flexibility in Aerospace and Automotive Component Manufacturing Systems: Practice Traditionally, parts fabrication in the aerospace and automotive industries has been associated with a number

de Weck, Olivier L.

37

Department of Mechanical and Aerospace Engineering The Department of Mechanical and Aerospace Engineering (MAE) at the University of Florida invites  

E-Print Network [OSTI]

Department of Mechanical and Aerospace Engineering The Department of Mechanical and aerospace sciences, (4) cellular mechanics and engineering, (5) energy, with emphasis on renewable of the above areas. Applicants must have a Ph.D. in mechanical or aerospace engineering

Roy, Subrata

38

aerospace pyrotechnic systems: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Websites Summary: High Assurance Aerospace CPS & Implications for the Automotive Industry Scott A. Lintelman1 of this next-generation aerospace CPS. This paper...

39

advanced aerospace systems: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Master of Science Gallo, Linda C. 300 High Assurance Aerospace CPS & Implications for the Automotive Industry Engineering Websites Summary: High Assurance Aerospace CPS &...

40

aerospace team online: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 Aerospace Engineering Online by the SEAS Materials Science Websites Summary: Aerospace Engineering Online by the SEAS UCLA MS Engineering Online, msenrgol.seas.ucla.edu Area is...

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Mechanical and Aerospace Engineering University at Buffalo  

E-Print Network [OSTI]

Mechanical and Aerospace Engineering University at Buffalo S t a t e U n i v e r s i t y o f N e w Y o r k MAE Seminar Series Rotation and Vorticity in Mechanics and Physics Alireza Hadjesfandiari Department of Mechanical and Aerospace Engineering University at Buffalo ah@buffalo.edu Abstract: Rotation

Krovi, Venkat

42

ANALYSIS OF THE SHEAR BEHAVIOR OF RAIL PAD ASSEMBLIES AS A COMPONENT OF THE CONCRETE SLEEPER FASTENING SYSTEM  

E-Print Network [OSTI]

Fastening System RAIL PAD ASSEMBLY LATERAL DISPLACEMENT FAILURE MODE AND EFFECT ANALYSIS (FMEA) INTRODUCTION life FMEA is used to define, identify, evaluate and eliminate potential failures from the system FMEA was used to guide the process of answering questions related to the component behavior and also

Barkan, Christopher P.L.

43

Oklahoma Aerospace Intellectual Capital/Educational Recommendations: an Inquiry of Oklahoma Aerospace Executives.  

E-Print Network [OSTI]

??The purpose of this qualitative study was to conduct detailed personal interviews with aerospace industry executives/managers from both the private and military sectors from across (more)

Nelson, Erin M.

2010-01-01T23:59:59.000Z

44

Integrated analysis procedure of aerospace composite structure  

E-Print Network [OSTI]

The emergence of composite material application in major commercial aircraft design, represented by the Boeing 787 and Airbus A350-XWB, signals a new era in the aerospace industry. The high stiffness to weight ratio of ...

Ahn, Junghyun

2008-01-01T23:59:59.000Z

45

OKLAHOMA STATE UNIVERSITY Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

OKLAHOMA STATE UNIVERSITY Mechanical and Aerospace Engineering Assistant Professor The School (6) tenure-track faculty positions at the Assistant Professor rank. Exceptional candidates in all precision manufacturing, HVAC&R, vibrations, aircraft and spacecraft, robotics, unmanned systems, autonomy

46

Inventory optimization in an aerospace supply chain  

E-Print Network [OSTI]

Strategic inventory management has become a major focus for Honeywell Aerospace as the business unit challenged itself to meeting cost reduction goals while maintaining a high level of service to its customers. This challenge ...

Lo, Billy S. (Billy Si Yee)

2007-01-01T23:59:59.000Z

47

E-Print Network 3.0 - aerospace industries division Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

results for: aerospace industries division Page: << < 1 2 3 4 5 > >> 1 Majors in Mechanical and Aerospace Engineering Summary: Majors in Mechanical and Aerospace Engineering...

48

Thermal Impact of Fasteners in High-Performance Wood-Framed Walls: Preprint  

SciTech Connect (OSTI)

Buildings are heavy consumers of energy, and residential building design is rapidly addressing topics to maximize energy conservation en route to net-zero energy consumption. Annual energy analysis of a building informs the choice among disparate energy measures, for cost, durability, occupant comfort, and whole-house energy use. Physics-based and empirical models of elements of a building are used in such analyses. High-performance wood-framed walls enable builders to construct homes that use much less than 40% of the energy consumed by similar homes built to minimum code. Modeling for these walls has considered physical features such as framing factor, insulation and framing properties, roughness and convective effects, and air leakage. The thermal effects of fasteners used to construct these walls have not been fully evaluated, even though their thermal conductivity is orders of magnitudes higher than that of other building materials. Drywall screws and siding nails are considered in this finite element thermal conductivity analysis of wall sections that represent wood-framed walls that are often used in high-performance homes. Nails and screws reduce even the best walls' insulating performance by approximately 3% and become increasingly significant as the framing factor increases.

Christensen, D.

2011-01-01T23:59:59.000Z

49

E-Print Network 3.0 - aerospace biomedical engineering Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

materialsenergy (Chemical... , and Nuclear Engineering; Electrical, Computer and Systems Engineering) Aerospace materials... structuresfluids (Mechanical, Aerospace, and Nuclear...

50

aerospace vehicle development: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A350-XWB, signals a new era in the aerospace industry. The high stiffness to weight ratio of ... Ahn, Junghyun 2008-01-01 214 Steven H. Collins Mechanical and Aerospace...

51

Aerospace Power & Electronics Simulation Workshop 2004 Satellite Attitude Control  

E-Print Network [OSTI]

Aerospace Power & Electronics Simulation Workshop 2004 · Satellite Attitude Control System Design Using Reaction Wheels Bhanu Gouda Brian Fast Dan Simon #12;2Aerospace Power & Electronics Simulation;3Aerospace Power & Electronics Simulation Workshop 2004 ADCS ·ADCS: Attitude Determination and Control

Simon, Dan

52

FacultyofAerospace Engineering MSc Programme  

E-Print Network [OSTI]

as Nuna 6, the solar- powered car that won second place in the 2011 World Solar Challenge in Australia in aircraft and propulsion system design. Aerodynamics and Wind Energy The MSc track in Aerodynamics and Wind Energy combines fundamental and applied research disciplines of aerospace and wind-power systems

Langendoen, Koen

53

Sibley School of Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

design; sustainable design; additive manufacturing; manufacturing of advanced and multifunctional 607 255-0813 mc288@cornell.edu October 2014 Faculty Position in Design and Manufacturing Mechanical and Manufacturing, as related strongly to the disciplines within Mechanical and Aerospace Engineering. Candidates

Bonassar, Larry

54

aerospace & mechanical (AME) AME overview programs available  

E-Print Network [OSTI]

22 aerospace & mechanical (AME) AME overview · programs available courses of instruction-thruster (the Free Molecule Micro-Resistojet) and the aerodynamics of ground vehicles. Mechanical Engineering Mechanical Engineers apply scientific methodology to find solutions to mechanical problems and to create

Rohs, Remo

55

Mechanical & Aerospace Engineering Turning Ideas into Reality  

E-Print Network [OSTI]

Mechanical & Aerospace Engineering Turning Ideas into Reality EnErgy Environ m Ent HEaltH mat Overview The Courses Mechanical Engineering (MEng / BEng) Mechanical Engineering With International Study (MEng / BEng) Aero-Mechanical Engineering (MEng / BEng) E N T r y F A Q S A p p l y i n g C a m p u

Mottram, Nigel

56

Single Ion Implantation  

SciTech Connect (OSTI)

On the equipment needed to implant ions in silicon and other materials. More information: http://newscenter.lbl.gov/f...

Thomas Schenkel

2008-10-21T23:59:59.000Z

57

Single Ion Implantation  

ScienceCinema (OSTI)

On the equipment needed to implant ions in silicon and other materials. More information: http://newscenter.lbl.gov/f...

Thomas Schenkel

2010-01-08T23:59:59.000Z

58

Development of CSS-42L{trademark}, a high performance carburizing stainless steel for high temperature aerospace applications  

SciTech Connect (OSTI)

Today`s aerospace engineering challenges demand materials which can operate under conditions of temperature extremes, high loads and harsh, corrosive environments. This paper presents a technical overview of the on-going development of CSS-42L (US Patent No. 5,424,028). This alloy is a case-carburizable, stainless steel alloy suitable for use in applications up to 427 C, particularly suited to high performance rolling element bearings, gears, shafts and fasteners. The nominal chemistry of CSS-42L includes: (by weight) 0.12% carbon, 14.0% chromium, 0.60% vanadium, 2.0% nickel, 4.75% molybdenum and 12.5% cobalt. Careful balancing of these components combined with VIM-VAR melting produces an alloy that can be carburized and heat treated to achieve a high surface hardness (>58 HRC at 1mm (0.040 in) depth) with excellent corrosion resistance. The hot hardness of the carburized case is equal to or better than all competitive grades, exceeding 60 HRC at 427 C. The fracture toughness and impact resistance of the heat treated core material have likewise been evaluated in detail and found to be better than M50-NiL steel. The corrosion resistance has been shown to be equivalent to that of 440C steel in tests performed to date.

Burrier, H.I.; Milam, L. [Timken Co., Canton, OH (United States); Tomasello, C.M.; Balliett, S.A.; Maloney, J.L. [Latrobe Steel Co., Latrobe, PA (United States); Ogden, W.P. [MPB Corp., Lebanon, NH (United States)

1998-12-31T23:59:59.000Z

59

High Temperature Materials for Aerospace Applications  

E-Print Network [OSTI]

below 430 ?C for exposure times up to 20 minutes. Transition-metal carbides were initially synthesized by carbothermal reduction of transition-metal halides and polymer precursor mixtures, at temperatures that range from 900 to 1500 ?C in an argon... ........................................ 20 2.3 Present/Future Aerospace Applications ......................................... 24 2.4 Ultra-High Temperature Materials ................................................. 27 2.4.1 Transition-Metal Carbides...

Adamczak, Andrea Diane

2011-08-08T23:59:59.000Z

60

aerospace sciences meeting: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

School of Engineering and Applied Science Department of Mechanical and Aerospace Materials Science Websites Summary: Princeton University School of Engineering and Applied...

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

aerospace expeditionary force: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

important as matrix materials for the advanced composites used in aerospace, electronics, automotive and other industries. (more) Subramaniam, C 1994-01-01 257 The influence of...

62

adaptive aerospace tools: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

in the face of unknown, changing, or poorly defined operating environments. In order for adaptive control systems to be used in safety-critical aerospace applications,...

63

ageless aerospace vehicles: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

in SCOB 228 School for Engineering of Matter, Transport & Energy 12; 49 Aerospace Safety Advisory Panel Geosciences Websites Summary: Joseph W. Dyer, USN (Ret.), Chair Dr....

64

E-Print Network 3.0 - aerospace sensor component Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Simplorer and Matlab 12;29Aerospace Power & Electronics Simulation Workshop 2004 Matlab... Aerospace Power & Electronics Simulation Workshop 2004 ... Source: Simon, Dan -...

65

E-Print Network 3.0 - aerospace vehicle structures Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of complex shapes for aerospace vehicles with minimal material wastage and energy (Green Technologies... . KAPANIA Mitchell Professor, Department of Aerospace and Ocean...

66

The ARM unpiloted aerospace vehicle (UAV) program  

SciTech Connect (OSTI)

Unmanned aerospace vehicles (UAVs) are an important complement to the DOE`s Atmospheric Radiation Measurement (ARM) Program. ARM is primarily a ground-based program designed to extensively quantify the radiometric and meteorological properties of an atmospheric column. There is a need for airborne measurements of radiative profiles, especially flux at the tropopause, cloud properties, and upper troposphere water vapor. There is also a need for multi-day measurements at the tropopause; for example, in the tropics, at 20 km for over 24 hours. UAVs offer the greatest potential for long endurance at high altitudes and may be less expensive than piloted flights. 2 figs.

Sowle, D. [Mission Research Corporation, Santa Barbara, CA (United States)

1995-09-01T23:59:59.000Z

67

Sandia National Laboratories: Careers: Aerospace Engineering  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive SolarEducation Programs:CRF Researchers answer AlanCarbon ManagementAerospace

68

aerospace systems test: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

aerospace systems test First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 26th Aerospace Testing Seminar,...

69

34 McCormick / spring Lead mechanical engineer, Titan Aerospace  

E-Print Network [OSTI]

and solar panels. Anyway, I learned about the job through a solar car listserv. I contacted him and becameCormick: What does Titan Aerospace do? Cornew: Titan Aerospace is a startup that designs and builds solar-powered unmanned aerial vehicles, or drones. Our long-term goal is to build solar-powered UAVs that could stay

Chen, Wei

70

aerospace & mechanical (AME) AME overview programs available courses flowcharts  

E-Print Network [OSTI]

of turbulence, computational fluid mechanics, com- bustion and heat transfer and nonlinear dynamics. Recent18 aerospace & mechanical (AME) AME overview · programs available · courses · flowcharts Aerospace-thruster (the Free Molecule Micro- Resistojet) and the aerodynamics of ground vehicles. Mechanical Engineering

Rohs, Remo

71

School of Mechanical,Aerospace, Chemical and Materials Engineering  

E-Print Network [OSTI]

School of Mechanical,Aerospace, Chemical and Materials Engineering Kyle D. Squires School of Mechanical, Aerospace, Chemical and Materials Engineering Arizona State University Tempe, Arizona, USA 2010 Tutorial School on Fluid Dynamics: Topics in Turbulence Center for Scientific Computation and Mathematical

Gruner, Daniel S.

72

T. G. Bifano Department of Aerospace and Mechanical  

E-Print Network [OSTI]

T. G. Bifano Department of Aerospace and Mechanical Engineering, Boston University, Boston, MA 02215 T. A. Dow Department of Mechanical and Aerospace Engineering, Precision Engineering Center, North stress, the mechanism of deformation will change from one of re- versible energy storage via elastic

73

Rensselaer Department of Mechanical, Aerospace, and Nuclear Engineering  

E-Print Network [OSTI]

Rensselaer Department of Mechanical, Aerospace, and Nuclear Engineering ANNUAL REPORT 2013 #12;facts & figures DEpARtMENt of MEchANicAl, AERospAcE, AND NuclEAR ENgiNEERiNg stuDENts 1 Engineering 24 Nuclear Engineering 14 DEgREEs offERED Aeronautical Engineering (B.s., M.Eng., M.s., ph

Salama, Khaled

74

BS in Aerospace Engineering ABET Accreditation The Bachelor of Science program in Aerospace Engineering at Syracuse University is accredited by  

E-Print Network [OSTI]

the impact of engineering solutions in a global, economic, environmental, and societal context (iBS in Aerospace Engineering ABET Accreditation The Bachelor of Science program in Aerospace Engineering at Syracuse University is accredited by the Engineering Accreditation Commission of ABET, http

Mohan, Chilukuri K.

75

BS in Aerospace Engineering ABET Accreditation The Bachelor of Science program in Aerospace Engineering at Syracuse University is accredited by  

E-Print Network [OSTI]

the impact of engineering solutions in a global, economic, environmental, and societal context (iBS in Aerospace Engineering ABET Accreditation The Bachelor of Science program in Aerospace Engineering at Syracuse University is accredited by the Engineering Accreditation Commission of ABET

Mohan, Chilukuri K.

76

Chapter 29. The Retinal Implant Project The Retinal Implant Project  

E-Print Network [OSTI]

-04A1 VA Center for Innovative Visual Rehabilitation MOSIS provides IC fabrication at no cost ProjectChapter 29. The Retinal Implant Project 29-1 The Retinal Implant Project RLE Group Retinal Implant Drohan, Dr. William Ellersick, Oscar Mendoza Introduction to the Retinal Implant Project The Retinal

77

Aerospace mergers and acquisitions from a lean enterprise perspective  

E-Print Network [OSTI]

In the past twenty years, companies in the aerospace industry experienced major transitions: mergers and acquisitions, and lean transformation initiatives. This thesis presents research about the relation of lean efforts ...

Kim, Junhong, 1974-

2004-01-01T23:59:59.000Z

78

Department of Mechanical and Aerospace Engineering Updated: Spring 2012  

E-Print Network [OSTI]

Department of Mechanical and Aerospace Engineering Updated: Spring 2012 MECHANICAL ENGINEERING TECHNICAL ELECTIVES Mechanical Engineering Majors are required to complete four (4) Technical Electives Century Energy Technologies II MAE 135 Computational Mechanics MAE 180A Spacecraft Guidance MAE 181 Space

Krstic, Miroslav

79

West Virginia University 1 Department of Mechanical and Aerospace  

E-Print Network [OSTI]

, solid mechanics, energy systems, engineering materials, automatic controls, mechatronicsWest Virginia University 1 Department of Mechanical and Aerospace Engineering Degrees Offered Master of science in mechanical engineering Master of science in engineering with a major in mechanical

Mohaghegh, Shahab

80

Reduction of rework at a large aerospace manufacturer  

E-Print Network [OSTI]

It is an axiom of the manufacturing of any complex product that errors will occur that require repair or discard of said product. In building aircraft, Raptor Aerospace encounters and repairs numerous deviations from the ...

Lieberman, Jeremy A. (Jeremy Alan)

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

aerospace mechanisms symposium: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

& Aerospace Engineering We present an arbitrary high-order quadrature- free, Runge for Engineering of Matter, Transport, and Energy. He received his B.S. in physics from Arizona...

82

aerospace medical panel: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: Rprint & Copyright @ by Aerospace Medical Association, Alexandria, V A w. P. ROACH, M.S., Ph.D., M, B.S., and CRAIG M. BRAMLETTE, A.S. ROACH WP, ROGERS ME, ROCKWELL BA,...

83

Solid state power bus controllers for aerospace applications  

E-Print Network [OSTI]

SOLID STATE POWER BUS CONTROLLERS FOR AEROSPACE APPLICATIONS A Thesis by TERRY JOSEPH VILLARREAL Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER... OF SCIENCE December 1988 Major Subject: Electrical Eny'neering SOLID STATE POWER BUS CONTROLLERS FOR AEROSPACE APPLICATIONS A Thesis TERRY JOSEPH VILLARREAL Approved as to style and content by: Mehrdad Ehsani (Chairman of Committee) Robert D. Nevels...

Villarreal, Terry Joseph

1988-01-01T23:59:59.000Z

84

New AB-Thermonuclear Reactor for Aerospace  

E-Print Network [OSTI]

There are two main methods of nulcear fusion: inertial confinement fusion (ICF) and magnetic confinement fusion (MCF). Existing thermonuclear reactors are very complex, expensive, large, and heavy. They cannot achieve the Lawson creterion. The author offers an innovation. ICF has on the inside surface of the shell-shaped combustion chamber a covering of small Prism Reflectors (PR) and plasma reflector. These prism reflectors have a noteworthy advantage, in comparison with conventional mirror and especially with conventional shell: they multi-reflect the heat and laser radiation exactly back into collision with the fuel target capsule (pellet). The plasma reflector reflects the Bremsstrahlung radiation. The offered innovation decreases radiation losses, creates significant radiation pressure and increases the reaction time. The Lawson criterion increases by hundreds of times. The size, cost, and weight of a typical installation will decrease by tens of times. The author is researching the efficiency of these innovations. Keywords: Thermonuclear reactor, Multi-reflex AB-thermonuclear reactor, aerospace thermonuclear engine. This work is presented as paper AIAA-2006-7225 to Space-2006 Conference, 19-21 September, 2006, San Jose, CA, USA.

Alexander Bolonkin

2007-06-14T23:59:59.000Z

85

E-Print Network 3.0 - aerospace-vehicle design ipad Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Required NA NA NA MMAE 436 Design of Aerospace Vehicles Rempfer... Fundamentals of Gas Dynamics 2nd Wiley 978-0-471-05967-6 MMAE 312 Aerodynamics of Aerospace Vehicles...

86

Multistate analysis and design : case studies in aerospace design and long endurance systems  

E-Print Network [OSTI]

This research contributes to the field of aerospace engineering by proposing and demonstrating an integrated process for the early-stage, multistate design of aerospace systems. The process takes into early consideration ...

Agte, Jeremy S. (Jeremy Sundermeyer)

2011-01-01T23:59:59.000Z

87

Service bulletin inventory management and modeling for aerospace parts in customer service organization  

E-Print Network [OSTI]

The Customer Service department of United Technology Corporation (UTC) Aerospace System is primarily responsible for providing spare parts, repair services, training, and technical support for products that UTC Aerospace ...

Pardede, Erna K. (Erna Kertasasmita)

2013-01-01T23:59:59.000Z

88

Aerospace and Mechanical Engineers design and build unique, complex mechanical, optical,  

E-Print Network [OSTI]

20 Aerospace and Mechanical Engineers design and build unique, complex mechanical, optical, far underground, and deep inside the intricacies of our own bodies. Aerospace and Mechanical skills in the areas of mechanics, thermodynamics, fluid mechanics, heat transfer, materials and automatic

Rohs, Remo

89

Aerospace and Mechanical Engineers design and build unique, complex mechanical, optical, and  

E-Print Network [OSTI]

20 Aerospace and Mechanical Engineers design and build unique, complex mechanical, optical, far underground, and deep inside the intricacies of our own bodies. Aerospace and Mechanical skills in the areas of mechanics, thermodynamics, fluid mechanics, heat transfer, materials and automatic

Rohs, Remo

90

E-Print Network 3.0 - aging aerospace structures Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2011-2012 Catalog Summary: Structures II) R Aer E 391 (Aerospace Seminar) 2 Aer E 321L (AerE Structures Lab) 3 Mat E 273 (Principles... Aerospace Engineering 2011-2012 Catalog...

91

E-Print Network 3.0 - aerospace medicine Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sciences and Ecology 54 Aerospace EngineeringJoshi and Valasek AIAA-99-4279-1 Direct Comparison of Neural Summary: Aerospace EngineeringJoshi and Valasek AIAA-99-4279-1 Direct...

92

Semiconductor Ion Implanters  

SciTech Connect (OSTI)

In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

MacKinnon, Barry A. [Isys, 2727 Walsh Ave., Suite 103, Santa Clara, CA 95051 (United States); Ruffell, John P. [Group 3, LLC, Sunnyvale, CA 94086 (United States)

2011-06-01T23:59:59.000Z

93

Remote actuated valve implant  

SciTech Connect (OSTI)

Valve implant systems positionable within a flow passage, the systems having an inlet, an outlet, and a remotely activatable valve between the inlet and outlet, with the valves being operable to provide intermittent occlusion of the flow path. A remote field is applied to provide thermal or magnetic activation of the valves.

McKnight, Timothy E; Johnson, Anthony; Moise, Jr., Kenneth J; Ericson, Milton Nance; Baba, Justin S; Wilgen, John B; Evans, III, Boyd McCutchen

2014-02-25T23:59:59.000Z

94

E-Print Network 3.0 - aerospace remote sensing Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

within aerospace engineering Astrodynamics Remote... dynamics and control Aerodynamics Remote sensing Computational fluid dynamics Systems engineering... to explore the...

95

UNIVERSITY OF STRATHCLYDE Lecturer/Senior Lecturer/Reader in Mechanical or Aerospace Engineering  

E-Print Network [OSTI]

areas: space/aerospace systems; micro/nano fluids and flows; energy engineering; or the mechanicsUNIVERSITY OF STRATHCLYDE Lecturer/Senior Lecturer/Reader in Mechanical or Aerospace Engineering Department of Mechanical & Aerospace Engineering Salary range: £33,320 - £58,157, open contract (with 3-year

96

1Mechanical, Aerospace and Nuclear Engineering nacThe Gaerttner Laboratory Nuclear Data Research at RPI  

E-Print Network [OSTI]

1Mechanical, Aerospace and Nuclear Engineering nacThe Gaerttner Laboratory Nuclear Data Research, Aerospace and Nuclear Engineering nacThe Gaerttner Laboratory Collaboration · RPI ­ Faculty: · Dr. Y. Danon.P Barry, Dr. R.C Block, B. Epping #12;3Mechanical, Aerospace and Nuclear Engineering nacThe Gaerttner

Danon, Yaron

97

Applying electronic contracting to the aerospace aftercare domain Felipe Meneguzzia,  

E-Print Network [OSTI]

Applying electronic contracting to the aerospace aftercare domain Felipe Meneguzzia, , Sanjay The contract project was a European Commission project whose aim was to develop frame- works, components contracts. In this context, an electronic contract provides a specifi- cation of the expected behaviours

Luck, Michael

98

advanced aerospace materials: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

aerospace materials First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Recent Advances in the Analysis and...

99

aerospace structural materials: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

aerospace structural materials First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 DEPARTMENT OF...

100

aerospace materials: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

aerospace materials First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 DEPARTMENT OF MECHANICAL,...

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

High Assurance Aerospace CPS & Implications for the Automotive Industry  

E-Print Network [OSTI]

our work on securing the distribution of aerospace CPS assets [3][5]. We are designing, developing, Bellevue, WA 98008 2 Network Security Lab (NSL), University of Washington, Seattle, WA 98195 Abstract network, is a cyber-physical system (CPS) that requires real-time, continuous and concurrent monitoring

Poovendran, Radha

102

Embedded NDE with Piezoelectric Wafer Active Sensors in Aerospace Applications  

E-Print Network [OSTI]

1 Embedded NDE with Piezoelectric Wafer Active Sensors in Aerospace Applications Victor Giurgiutiu (NDE) is explored. Laboratory tests are used to prove that PWAS can satisfactorily perform Lamb wave method. INTRODUCTION Embedded nondestructive evaluation (NDE) is an emerging technology that will allow

Giurgiutiu, Victor

103

International Workshop SMART MATERIALS, STRUCTURES & NDT in AEROSPACE  

E-Print Network [OSTI]

International Workshop SMART MATERIALS, STRUCTURES & NDT in AEROSPACE Conference NDT in Canada 2011 FRACTIONAL CONTROLLER FOR THE VIBRATION SUPPRESSION OF A SMART BEAM Cem ONAT1 , Melin SAHIN 2 , Yavuz YAMAN3 controller is designed for the suppression of the flexural vibrations of a smart beam. The designed

Yaman, Yavuz

104

Wireless power transfer for scaled electronic biomedical implants  

E-Print Network [OSTI]

Implantable Micro Oxygen Generator (IMOG)," BiomedicalImplantable Micro Oxygen Generator (IMOG)," Biomedical

Theilmann, Paul Thomas

2012-01-01T23:59:59.000Z

105

Broad beam ion implanter  

DOE Patents [OSTI]

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

Leung, Ka-Ngo (Hercules, CA)

1996-01-01T23:59:59.000Z

106

E-Print Network 3.0 - aerospace medicine vol Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

@seas.ucla.edu William S. Klug Mechanical and Aerospace Engineering klug@seas.ucla.edu H. Phillip Koeffler Medicine... -Ophthalmology & Neurology jld@ucla.edu Daniel Ennis...

107

Reliability-based framework for fatigue damage prognosis of bonded structural elements in aerospace composite structures  

E-Print Network [OSTI]

situ damage detection of composite materials for structuralmaterials, Journal of Composite Materials , 10, 342-354,effects in damaged composite aerospace structures ,

Gobbato, Maurizio

2011-01-01T23:59:59.000Z

108

E-Print Network 3.0 - aerospace technology development Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Page: << < 1 2 3 4 5 > >> 1 STEVENS INSTITUTE OF TECHNOLOGY DEPARTMENT OF MECHANICAL ENGINEERING Summary: Carnegie Bldg, Room 315, Time 1:30pm Advances in Aerospace...

109

E-Print Network 3.0 - aerospace industry Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

hands-on experiences: Flight Source: Oklahoma State University, School of Mechanical and Aerospace Engineering, Building and Thermal Systems Research Group Collection:...

110

E-Print Network 3.0 - aerospace engineering Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

take courses that include the ... Source: Oklahoma State University, School of Mechanical and Aerospace Engineering, Building and Thermal Systems Research Group Collection:...

111

E-Print Network 3.0 - advanced aerospace plane Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of the accomplishments at Iowa State University's Department of Aerospace Engineering (AerE) in 2007-2008. We ... Source: Iowa State University, Office of Biorenewables Programs...

112

E-Print Network 3.0 - aerospace database published Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

.p.A. Rome, IT Fire Control Systems RADARS Oerlikon Aerospace Inc. Montreal, CA ADATS Missile System Surface Source: Laporte, Claude Y. - Dpartement de gnie logiciel et...

113

UAVs in climate research: The ARM Unmanned Aerospace Vehicle Program  

SciTech Connect (OSTI)

In the last year, a Department of Energy/Strategic Environmental Research and Development Program project known as ``ARM-UAV`` has made important progress in developing and demonstrating the utility of unmanned aerospace vehicles as platforms for scientific measurements. Recent accomplishments include a series of flights using an atmospheric research payload carried by a General Atomics Gnat UAV at Edwards AFB, California, and over ground instruments located in north-central Oklahoma. The reminder of this discussion will provide background on the program and describe the recent flights.

Bolton, W.R.

1994-05-01T23:59:59.000Z

114

An Assessment of the Degree of Implementation of the Lean Aerospace Initiative Principles and Practices within the US Aerospace and Defense Industry  

E-Print Network [OSTI]

This report is a formal documentation of the results of an assessment of the degree to which Lean Principles and Practices have been implemented in the US Aerospace and Defense Industry. An Industry Association team prepared ...

Shaw, Thomas E.

115

News for Mechanical Engineering, Aerospace Engineering, Engineering Mechanics, and Nuclear Engineering Alumni  

E-Print Network [OSTI]

in contributing to the key areas of energy, transportation, manufacturing, environment, and health. Q: What do youNews for Mechanical Engineering, Aerospace Engineering, Engineering Mechanics, and Nuclear of the Department of Mechanical and Aerospace Engineering effective July 1, 2012. Selamet has been a professor

Singh, Rajendra

116

Mechanical & Aerospace Engineering Dept. West Virginia University, Oct. 2nd, 2008  

E-Print Network [OSTI]

Mechanical & Aerospace Engineering Dept. West Virginia University, Oct. 2nd, 2008 www STUDENTS in MECHANICAL and AEROSPACE ENGINEERING #12;OBJECTIVES Overview of Departmental Policies M.S. & Ph.D. Degrees in Energy Materials Multidisciplinary program based in the MAE dept Five

Mohaghegh, Shahab

117

Aerospace Stream Selection Streams A,B,CStreams A,B,C  

E-Print Network [OSTI]

mechanics, vehicle performance ­ Launch vehicle propulsion and aerodynamics,p p y wind energy, ground Winter 2013 #12;Outline Aerospace Industry in Canada History of Carleton's Bachelor of Aerospace , aeroelastic analysis, aircraft mechanical systems, landing gear, engine design, manufacturing ­ Wind turbine

Dawson, Jeff W.

118

1Mechanical, Aerospace and Nuclear Engineering nacThe Gaerttner Laboratory RPI LINAC Facility  

E-Print Network [OSTI]

1Mechanical, Aerospace and Nuclear Engineering nacThe Gaerttner Laboratory RPI LINAC Facility and Nuclear Engineering nacThe Gaerttner Laboratory Capabilities of the RPI LINAC · Pulsed Electron Beam ­ 7ns;4Mechanical, Aerospace and Nuclear Engineering nacThe Gaerttner Laboratory Capabilities of the RPI LINAC

Danon, Yaron

119

Implantable biomedical devices on bioresorbable substrates  

DOE Patents [OSTI]

Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

Rogers, John A; Kim, Dae-Hyeong; Omenetto, Fiorenzo; Kaplan, David L; Litt, Brian; Viventi, Jonathan; Huang, Yonggang; Amsden, Jason

2014-03-04T23:59:59.000Z

120

Medical implants and methods of making medical implants  

DOE Patents [OSTI]

A medical implant device having a substrate with an oxidized surface and a silane derivative coating covalently bonded to the oxidized surface. A bioactive agent is covalently bonded to the silane derivative coating. An implantable stent device including a stent core having an oxidized surface with a layer of silane derivative covalently bonded thereto. A spacer layer comprising polyethylene glycol (PEG) is covalently bonded to the layer of silane derivative and a protein is covalently bonded to the PEG. A method of making a medical implant device including providing a substrate having a surface, oxidizing the surface and reacting with derivitized silane to form a silane coating covalently bonded to the surface. A bioactive agent is then covalently bonded to the silane coating. In particular instances, an additional coating of bio-absorbable polymer and/or pharmaceutical agent is deposited over the bioactive agent.

Shaw, Wendy J; Yonker, Clement R; Fulton, John L; Tarasevich, Barbara J; McClain, James B; Taylor, Doug

2014-09-16T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

PROPERTIES OF DEFECTS AND IMPLANTS IN Mg+ IMPLANTED SILICON CARBIDE  

SciTech Connect (OSTI)

As a candidate material for fusion reactor designs, silicon carbide (SiC) under high-energy neutron irradiation undergoes atomic displacement damage and transmutation reactions that create magnesium as one of the major metallic products. The presence of Mg and lattice disorder in SiC is expected to affect structural stability and degrade thermo-mechanical properties that could limit SiC lifetime for service. We have initiated a combined experimental and computational study that uses Mg+ ion implantation and multiscale modeling to investigate the structural and chemical effects in Mg implanted SiC and explore possible property degradation mechanisms.

Jiang, Weilin; Zhu, Zihua; Varga, Tamas; Bowden, Mark E.; Manandhar, Sandeep; Roosendaal, Timothy J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

2013-09-25T23:59:59.000Z

122

Positron annihilation study of P implanted Si  

SciTech Connect (OSTI)

High-energy ion implantation (above 200 keV) is now commonly used in a variety of VLSI processes. The high energy required for these implants is often achieved by implanting multiply charged ions, which inevitably brings in the problem of low-energy ion contamination. The low-energy contamination is difficult to diagnose and detect. Positron annihilation spectroscopy is used to examine the defect distributions in these high energy implants with varying degrees of contamination.

Asoka-Kumar, P.; Au, H.L.; Lynn, K.G. [Brookhaven National Lab., Upton, NY (United States); Sferlazzo, P. [Eaton Corp., Beverly, MA (United States). SED Division

1992-12-01T23:59:59.000Z

123

An Approach to Analyze Tradeoffs for Aerospace System Design and Operation  

E-Print Network [OSTI]

There are important tradeoffs that need to be considered for the design and operation of aerospace systems. In addition to tradeoffs, there may also be multiple stakeholders of interest to the system and each may have ...

O'Neill, Gregory

2012-11-01T23:59:59.000Z

124

An approach to analyze tradeoffs for aerospace system design and operation  

E-Print Network [OSTI]

There are important tradeoffs that need to be considered for the design and operation of aerospace systems. In addition to tradeoffs, there may also be multiple stakeholders of interest to the system and each may have ...

O'Neill, Michael Gregory

2013-01-01T23:59:59.000Z

125

Design for affordability in defense and aerospace systems using tradespace-based methods  

E-Print Network [OSTI]

Program failures have plagued the defense and aerospace industry for decades, as unanticipated cost and schedule overruns have rendered the development of systems ineffective in terms of time and cost considerations. This ...

Wu, Marcus Shihong

2014-01-01T23:59:59.000Z

126

Applying Service Oriented Architecture in the Aerospace Industry Jurga Kazlauskaite, Arsalan Minhas, F. H. Vogt  

E-Print Network [OSTI]

1 Applying Service Oriented Architecture in the Aerospace Industry Jurga Kazlauskaite, Arsalan efficiently working Service Oriented Architecture for cross enterprise business processes and stresses. Key words: Service Oriented Architecture, cross enterprise business processes, verification, security

Turau, Volker

127

Aerospace and Mechanical Engineers design and build unique, complex mechanical, optical,  

E-Print Network [OSTI]

skills in the areas of mechanics, thermodynamics, fluid mechanics, heat transfer, materials and automatic including control of turbulence, emerging fuel cell technologies, computational fluid mechanics, ground20 Aerospace and Mechanical Engineers design and build unique, complex mechanical, optical

Rohs, Remo

128

Aerospace and Mechanical Engineers design and build unique, complex mechanical, optical, and electronic  

E-Print Network [OSTI]

skills in the areas of mechanics, thermodynamics, fluid mechanics, heat transfer, materials and automatic including control of turbulence, emerging fuel cell technologies, computational fluid mechanics, ground20 Aerospace and Mechanical Engineers design and build unique, complex mechanical, optical

Rohs, Remo

129

Aerospace and Mechanical Engineers design and build unique, complex mechanical-optical-  

E-Print Network [OSTI]

of mechanics, thermodynamics, fluid mechanics, heat transfer, materials and automatic controls. Our graduates including control of turbulence, emerging fuel cell technologies, computational fluid mechanics, ground20 Aerospace and Mechanical Engineers design and build unique, complex mechanical

Rohs, Remo

130

Design of a small fast steering mirror for airborne and aerospace applications  

E-Print Network [OSTI]

This thesis presents the analysis and design of a small advanced fast steering mirror (sAFSM) for airborne and aerospace platforms. The sAFSM provides feedback-controlled articulation of two rotational axes for precision ...

Boulet, Michael Thomas

2008-01-01T23:59:59.000Z

131

An examination of Boeing's supply chain management practices within the context of the global aerospace industry  

E-Print Network [OSTI]

This thesis examines the supply chain management practices of the Boeing Commercial Airplane Company within the context of the global aerospace industry. The methodology used for this study includes a study of emerging ...

izmeci, DaŸ lar

2005-01-01T23:59:59.000Z

132

Doctor of Engineering internship experience at Ball Aerospace Systems Division, Boulder, Colorado: an internship report  

E-Print Network [OSTI]

This monograph describes the author's internship experiences at Ball Aerospace Systems Division, Boulder, Colorado. A system-level spacecraft design procedure is presented. It describes a spacecraft design flow with emphasis...

Larson, Wiley J.

2013-03-13T23:59:59.000Z

133

E-Print Network 3.0 - automatic implantable cardioverter Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2. Other... Implant Devices Examples: Cochlear implant or implanted hearing aid, drug-infusion pump (including Insulin... infusion pump), any other electronic implant ... Source:...

134

Atmospheric radiation measurement unmanned aerospace vehicle (ARM-UAV) program  

SciTech Connect (OSTI)

ARM-UAV is part of the multi-agency U.S. Global Change Research Program and is addressing the largest source of uncertainty in predicting climatic response: the interaction of clouds and the sun`s energy in the Earth`s atmosphere. An important aspect of the program is the use of unmanned aerospace vehicles (UAVs) as the primary airborne platform. The ARM-UAV Program has completed two major flight series: The first series conducted in April, 1994, using an existing UAV (the General Atomics Gnat 750) consisted of eight highly successful flights at the DOE climate site in Oklahoma. The second series conducted in September/October, 1995, using two piloted aircraft (Egrett and Twin Otter), featured simultaneous measurements above and below clouds and in clear sky. Additional flight series are planned to continue study of the cloudy and clear sky energy budget in the Spring and Fall of 1996 over the DOE climate site in Oklahoma. 3 refs., 4 figs., 1 tab.

Bolton, W.R. [Sandia National Laboratories, Livermore, CA (United States)

1996-11-01T23:59:59.000Z

135

Ascent performance feasibility of the national aerospace plane  

SciTech Connect (OSTI)

The national aerospace plane (NASP) is a proposed hypervelocity research vehicle which must take-off horizontally, achieve orbital speed, and then land horizontally. Its configuration is dominated by the powerplant, which includes the combination of turbojet engines for flight at subsonic speeds and low supersonic speeds, ramjet engines for flight at high supersonic speeds, scramjet engines for flight at hypersonic speeds, and rocket engines for flight at near-orbital speeds. Optimal trajectories are studied for a given NASP configuration, the so-called general hypersonic aerodynamics model example, under the assumption that the NASP is controlled via angle of attack and power setting. Three powerplant models are considered: (E1) and (E2) are turbojet, ramjet, scramjet combinations; (E3) is a turbojet, ramjet scramjet, rocket combination, with the rocket mode starting at M = 15. Realistic constraints are imposed on the peak dynamic pressure, peak heating rate, and peak tangential acceleration. Under this scenario, the time history of the controls is optimized simultaneously with the switch times from one engine mode to the next. The optimization criterion is the total mass of fuel required to achieve orbital speed. The optimization study employs the sequential gradient-restoration algorithm for optimal control problems.

Miele, A.; Lee, W.Y.; Wu, G.D. [Rice Univ., Houston, TX (United States)

1994-12-31T23:59:59.000Z

136

Pulsed source ion implantation apparatus and method  

DOE Patents [OSTI]

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Leung, Ka-Ngo (Hercules, CA)

1996-01-01T23:59:59.000Z

137

Pulsed source ion implantation apparatus and method  

DOE Patents [OSTI]

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

Leung, K.N.

1996-09-24T23:59:59.000Z

138

The University's Aerospace Engineering Research Centre was established in 2007 and has since made a significant contribution to research and development in the aerospace  

E-Print Network [OSTI]

The aerospace industry is increasingly using composite materials, such as carbon fibre, in the building damage from an impact forms in composite aircraft materials, with the aim of assisting designers to power them. However, the difficulty with these new materials is that a low velocity impact

Burton, Geoffrey R.

139

swiss aerospace cluster // The swiss aerospace cluster is an agile network and non-profit organisation for pooling information across companies and organisations, thereby incre-  

E-Print Network [OSTI]

diesel bus. Thus, our new predictive strategy helps cut CO2 emissions of hybrid-electric buses by 5.swiss-aerospace-cluster.ch This project aims to minimise CO2 emissions of hybrid-electric buses used in public trans- port. In hybrid the power split between the battery and the engine. Simu- lations show that a hybrid-electric bus

Daraio, Chiara

140

Implantation, Activation, Characterization and Prevention/Mitigation...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Activation, Characterization and PreventionMitigation of Internal Short Circuits in Lithium-Ion Cells Implantation, Activation, Characterization and PreventionMitigation of...

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Magnesium behavior and structural defects in Mg+ ion implanted...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide. Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide. Abstract: As a...

142

Source/drain profile engineering with plasma implantation  

SciTech Connect (OSTI)

Shallow junction profiles are controlled by the variable implant profile, implant damage profile and annealing cycle. For plasma immersion ion implantation (PIII) systems, the dopant and damage profiles vary with plasma source conditions and implanter waveforms. These can lead to different implant profiles for the same dose and energy, and different junction profiles after annealing. In the low energy regime, the as-implanted profiles resemble those from conventional implanters. In the Berkeley PIH system, a 55 mn p{sup +} junction is formed by 1 kV BF{sub 3} PIII implantation and a two-step rapid thermal annealing cycle.

Jones, E.C.; Cheung, N.W. [Univ. of California, Berkeley, CA (United States); Jiqun Shao; Denholm, A.S. [Eaton Corporation, Beverly, MA (United States)

1996-12-31T23:59:59.000Z

143

Dr. Brian L. Wardle Director, Nano-Engineered Composite aerospace STructures (NECST) Consortium  

E-Print Network [OSTI]

are in the areas of nano-engineered advanced composites, bulk nanostructured materials, carbon-based material applications. Such hybrid advanced composites employ aligned carbon nanotubes (CNTs) to enhance laminate Composite aerospace STructures (NECST) Consortium and has served as the materials/structures lead on MIT

Guiltinan, Mark

144

18th AIAA Aerospace Ground Testing Survey of Short Duration, Hypersonic and Hypervelocity Facilities  

E-Print Network [OSTI]

18th AIAA Aerospace Ground Testing Conference #12;94-2491 Survey of Short Duration, Hypersonic 76019-0018 Hypersonic and hypervelocity testing relies to a large extent on short duration facilities activity con- fined mostly to hypersonic and hypervelocity regimes. Early development of such facilities

Texas at Arlington, University of

145

99--MarMar--0707 11AERODYNAMIC RESEARCH CENTER MECHANICAL AND AEROSPACE ENGINEERING DEPARTMENT  

E-Print Network [OSTI]

99--MarMar--0707 11AERODYNAMIC RESEARCH CENTER MECHANICAL AND AEROSPACE ENGINEERING DEPARTMENT and The National Science Council, Taiwan, ROC ·Philip K. Panicker Aerodynamic Research Center, University of Texas Department, UT Arlington, Arlington, Texas, 76019 #12;99--MarMar--0707 22AERODYNAMIC RESEARCH CENTER

Texas at Arlington, University of

146

2010 Asia-Pacific International Symposium on Aerospace Technology Rotor-stator interaction broadband noise  

E-Print Network [OSTI]

2010 Asia-Pacific International Symposium on Aerospace Technology Rotor-stator interaction-dimensional annular cascade to the impinging harmonic distortions. Each upstream har- monic mode is defined by its and Horan[2] . The #12;· 2 · Igor Vinogradov/ Chinese Journal of Aeronatics typical energy distribution over

Huang, Xun

147

Major Map: Aerospace Engineering (Astronautics) Bachelor of Science in Engineering (B.S.E.)  

E-Print Network [OSTI]

114: General Chemistry for Engineers(SQ) OR CHM 115: General Chemistry with Qualitative Analysis (SQMajor Map: Aerospace Engineering (Astronautics) ­ Bachelor of Science in Engineering (B.S.E.) Ira A. Fulton School of Engineering, Tempe Campus Catalog Year: 2009-2010 Page 1 of 2 Updated: 3/9/09 Completed

Rhoads, James

148

The CU Aerospace / VACCO CubeSat High Impulse Propulsion System (CHIPS) offers a miniaturized and  

E-Print Network [OSTI]

· Overall control authority: roll, pitch, yaw, +/- Z · On-orbit update of system parameters, including · System two-failure-tolerant against leakage · Life span: 2+ years from propellant load. · HighThe CU Aerospace / VACCO CubeSat High Impulse Propulsion System (CHIPS) offers a miniaturized

Carroll, David L.

149

aerospace materials aluminum-lithium: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

aerospace materials aluminum-lithium First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 The effect of...

150

Transferring new dynamic capabilities to SMEs: the role of ONERA the French Aerospace LabTM  

E-Print Network [OSTI]

the public R&D laboratories and the SMEs in terms of Technology Readiness Levels (TRLs). Some the "national innovation system". Keywords: French SMEs, technology transfer, information asymmetries, dynamic1 Transferring new dynamic capabilities to SMEs: the role of ONERA ­ the French Aerospace Lab

Paris-Sud XI, Université de

151

CU-CAS-97-09 CENTER FOR AEROSPACE STRUCTURES THE CONSTRUCTION OF FREE-FREE  

E-Print Network [OSTI]

CU-CAS-97-09 CENTER FOR AEROSPACE STRUCTURES THE CONSTRUCTION OF FREE-FREE FLEXIBILITY MATRICES OF ENGINEERING UNIVERSITY OF COLORADO CAMPUS BOX 429 BOULDER, COLORADO 80309 #12;The Construction of Free-Free­418, of that journal) #12;The Construction of Free-Free Flexibility Matrices as Generalized Stiffness Inverses C. A

Felippa, Carlos A.

152

Newsletter of the Department of Aerospace Engineering University of Illinois at Urbana-Champaign  

E-Print Network [OSTI]

Newsletter of the Department of Aerospace Engineering University of Illinois at Urbana interesting and exciting things have happened in the Illinois AE Department over the last year, and we and energy of our students and alumni, they naturally have achieved great things. Many examples

Illinois at Urbana-Champaign, University of

153

Department of Aerospace and Mechanical Engineering USC Viterbi School of Engineering  

E-Print Network [OSTI]

;messagefromthechair Aerospace and Mechanical Engineers investigate problems and design solutions in physical systems Department of the USC Viterbi School of Engineering played a storied role in the aerodynamics/fluid mechanics systems, won the 2008 Richard R. Torrens Award of the American Society of Civil Engineers (ASCE) for his

Zhou, Chongwu

154

Progress in Aerospace Sciences 39 (2003) 185248 The unsteady aerodynamics of slender wings and aircraft  

E-Print Network [OSTI]

Progress in Aerospace Sciences 39 (2003) 185­248 The unsteady aerodynamics of slender wings nonlinearities and flow field time lags. The aerodynamic and the vortical flow structure over simple delta wings of leading-edge vortices and their influence on delta wing aerodynamics for stationary models is presented

Nelson, Robert C.

155

Courses for Breadth Requirement of Aerospace Engineering M.S. Degree Aerodynamics,  

E-Print Network [OSTI]

Courses for Breadth Requirement of Aerospace Engineering M.S. Degree Program Aerodynamics, Fluid Mechanics, Combustion and Propulsion (AFMCP) AE 410/CSE 461: Computational Aerodynamics AE 412/ME 411: Viscous Flow & Heat Transfer AE 416: Applied Aerodynamics AE 419: Aircraft Flight Mechanics AE 433

Gilbert, Matthew

156

Abstract--The growing popularity and success of fuel cells in aerospace, stationary power, and transportation  

E-Print Network [OSTI]

to low cost technologies and chip-scale dimen- sions. Conventional fuel cell models, however, fail1 Abstract-- The growing popularity and success of fuel cells in aerospace, stationary power runtime, and decreasing size. Di- rect-methanol fuel cell batteries have now been built and conformed

Rincon-Mora, Gabriel A.

157

R~print & Copyright @ by Aerospace Medical Association, Alexandria, V A  

E-Print Network [OSTI]

R~print & Copyright @ by Aerospace Medical Association, Alexandria, V A w. P. ROACH, M.S., Ph.D., M, B.S., and CRAIG M. BRAMLETTE, A.S. ROACH WP, ROGERS ME, ROCKWELL BA, BOPPART SA, STEIN CD, BRAMLETTE

Boppart, Stephen

158

AIAA 2000-0528 NEW CHALLENGES FOR AEROSPACE EDUCATION PROGRAMS IN AMERICAN AND  

E-Print Network [OSTI]

) and consulting for American and Russian companies in aerospace and technology transfer. International Programs together to realize international projects. The pre-college activities, curricula and existent ways, military, and economic conditions in the world. The international cooperation in these areas has become

Riabov, Vladimir V.

159

A Framework for the Architecting of Aerospace Systems Portfolios with Commonality  

E-Print Network [OSTI]

OF DOCTOR OF PHILOSOPHY AT THE MASSACHUSETTS INSTITUTE OF TECHNOLOGY May 2009 © Massachusetts Institute of the Requirements for the Degree of Doctor of Philosophy Abstract Aerospace systems are increasingly being developed portfolio life-cycle cost and risk; one important synergy is commonality between the systems

de Weck, Olivier L.

160

Raman P. Singh School of Mechanical and Aerospace Engineering Phone (Tulsa): 918.594.8155  

E-Print Network [OSTI]

nanocomposites - Environmental degradation and durability of fiber-reinforced polymer composites - Amorphous/nanocrystalline ceramics composites for aerospace and nuclear applications - Nanoindentation schemes for testing Island, 1992 Thesis: Effect of Particle Shape and Particle Damage on Stress Wave Propagation in Granular

Ghajar, Afshin J.

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Department of Mechanical, Aerospace, and Nuclear Engineering 1,115 Undergraduates  

E-Print Network [OSTI]

Department of Mechanical, Aerospace, and Nuclear Engineering STUDENTS 1,115 Undergraduates 152 23 Nuclear Engineering 13 DEGREES OFFERED Aeronautical Engineering (B.S., M.Eng., M.S., Ph.D.) Engineering Physics (M.S., Ph.D.) Mechanical Engineering (B.S., M.Eng., M.S., Ph.D.) Nuclear Engineering (B

Salama, Khaled

162

CIRQ: Qualitative fluid flow modelling for aerospace FMEA applications Neal Snooke  

E-Print Network [OSTI]

M2 CIRQ: Qualitative fluid flow modelling for aerospace FMEA applications Neal Snooke Department- oped on top of the MCIRQ simulator with the aim to produce an automated FMEA for aircraft fuel systems similar to pre- viously developed automated electrical FMEA. Introduction This paper describes a circuit

Snooke, Neal

163

A miniature, implantable wireless neural stimulation system  

E-Print Network [OSTI]

In this thesis, I present the design of a wireless neural stimulation system. The system consists of an external transmitter, controllable through a computer interface, and a miniature, implantable wireless receiver and ...

Arfin, Scott K. (Scott Kenneth)

2006-01-01T23:59:59.000Z

164

Resistivity changes in carbon-implanted Teflon  

E-Print Network [OSTI]

. . 11 Carbon Disnibution vs Depth for 50 kV Implantation . . . . . . . . . . . . . . . . . . . 13 15 17 18 12 Experiment III Resistance Curve 19 CHAPTERI INTRODUCTION Motivation Dr. Ron R. Hart of Texas ARM's Nuclear Engineering Department... UNDERGRADUATE RESEARCH FELLOW April 2004 Major: Nuclear Engineering RESISTIVITY CHANGES IN CARBON-IMPLANTED TEFLON A Senior Honors Thesis by MATTHEW R. JACKSON Submitted to the Office of Honors Programs k Academic Scholarships Texas A&M University...

Jackson, Matthew R.

2013-02-22T23:59:59.000Z

165

46th Aerospace Sciences Meeting, January 7-10, 2008, Reno, Nevada A Smart Wind Turbine Blade Using Distributed  

E-Print Network [OSTI]

46th Aerospace Sciences Meeting, January 7-10, 2008, Reno, Nevada A Smart Wind Turbine Blade Using of "smart" wind turbine blades with integrated sensor-actuator-controller modules to im- prove

Nelson, Robert C.

166

Ion implantation of silicon nitride ball bearings  

SciTech Connect (OSTI)

Hypothesis for ion implantation effect was that stress concentrations reflected into the bulk due to topography such as polishing imperfections, texture in the race, or transferred material, might be reduced due to surface amorphization. 42 control samples were tested to an intended runout period of 60 h. Six ion implanted balls were tested to an extended period of 150 h. Accelerated testing was done in a V groove so that wear was on two narrow wear tracks. Rutherford backscattering, XRPS, profilometry, optical microscopy, nanoindentation hardness, and white light interferometry were used. The balls were implanted with 150-keV C ions at fluence 1.1x10{sup 17}/cm{sup 2}. The samples had preexisting surface defects (C-cracks), so the failure rate of the control group was unacceptable. None of the ion-implanted samples failed in 150 h of testing. Probability of randomly selecting 6 samples from the control group that would perform this well is about 5%, so there is good probability that ion implantation improved performance. Possible reasons are discussed. Wear tracks, microstructure, and impurity content were studied in possible relation to C-cracks.

Williams, J.M. [Oak Ridge National Lab., TN (United States); Miner, J.R. [United Technologies, Pratt and Whitney, West Palm Beach, FL (United States)

1996-09-01T23:59:59.000Z

167

Ion sources for ion implantation technology (invited)  

SciTech Connect (OSTI)

Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm 10 cm, and the beam uniformity is important as well as the total target beam current.

Sakai, Shigeki, E-mail: sakai-shigeki@nissin.co.jp; Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki [Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205 (Japan)] [Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205 (Japan)

2014-02-15T23:59:59.000Z

168

Photoresist integrity during high energy implant  

SciTech Connect (OSTI)

Photoresist integrity was evaluated on a commercial high-energy ion implanter operated up to the specified energy (1.7 MeV B or 3.0 MeV P) and power (1.0 MeV B at 1000 p{mu}A or 2.0 MeV P at 500 p{mu}A) limits. SEM Cross-sectional analysis of several photoresists showed that the proper cooling was maintained to avoid significant photoresist degradation. Photoresist shrinkage was observed, resulting in thickness reductions up to 22% and significant changes in sidewall slope. Little asymmetry was observed when photoresist was implanted at a 7{degrees} tilt. At the specified power limits, photoresist outgassing prevented smooth implant operation unless pressure compensation was implemented.

Parrill, T.M. [Texas Instruments Productization, Dallas, TX (United States); Jones, M. [Eaton Corporation, Beverly, MA (United States); Jain, A. [Texas Indstruments Semiconductor Process and Development Center, Dallas, TX (United States)

1996-12-31T23:59:59.000Z

169

Electro-anatomical models of the cochlear implant  

E-Print Network [OSTI]

While cochlear implantation has become the standard care in treating patients with severe to profound sensorineural hearing loss, the variation in benefit (communicative ability) individual patients derive from implantation ...

Whiten, Darren M. (Darren Mark), 1977-

2007-01-01T23:59:59.000Z

170

Field emission study of cobalt ion implanted porous silicon  

E-Print Network [OSTI]

Porous silicon has become potentially important material for microelectronics applications. By using low energy implantation and energy scan implantation, a stable silicide with good electrical conductivity can be formed, and can be used...

Liu, Hongbiao

1995-01-01T23:59:59.000Z

171

Sound localization and interaural time sensitivity with bilateral cochlear implants  

E-Print Network [OSTI]

Bilateral cochlear implantation is becoming more common as clinicians attempt to provide better sound-source localization and speech reception in noise for cochlear implant (CI) users. While some improvement over the ...

Poon, Becky Bikkei

2006-01-01T23:59:59.000Z

172

Ultrasound image guided acetabular implant orientation during total hip replacement  

DOE Patents [OSTI]

A system for assisting in precise location of the acetabular implant during total hip replacement. The system uses ultrasound imaging for guiding the placement and orientation of the implant.

Chang, John; Haddad, Waleed; Kluiwstra, Jan-Ulco; Matthews, Dennis; Trauner, Kenneth

2003-08-19T23:59:59.000Z

173

Dosimetry implant for treating restenosis and hyperplasia  

DOE Patents [OSTI]

The present invention discloses a method of selectively providing radiation dosimetry to a subject in need of such treatment. The radiation is applied by an implant comprising a body member and .sup.117mSn electroplated at selected locations of the body member, emitting conversion electrons absorbed immediately adjacent selected locations while not affecting surrounding tissue outside of the immediately adjacent area.

Srivastava, Suresh; Gonzales, Gilbert R; Howell, Roger W; Bolch, Wesley E; Adzic, Radoslav

2014-09-16T23:59:59.000Z

174

Method for ion implantation induced embedded particle formation via reduction  

DOE Patents [OSTI]

A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

Hampikian, Janet M (Decatur, GA); Hunt, Eden M (Atlanta, GA)

2001-01-01T23:59:59.000Z

175

XANES study of Fe-implanted strontium titanate  

SciTech Connect (OSTI)

Properties of strontium titanate SrTiO{sub 3} (STO) depend to a great extent on the substitutional dopants and defects of crystal structure. The ion beam implantation method was used for doping STO (001) crystals with Fe at different doses. Implanted samples were then annealed at 350C in oxygen to induce recrystallization and remove oxygen vacancies produced during ion implantation process. The effect of Fe doping and post-implantation annealing was studied by X-ray Absorption Near Edge Spectroscopy (XANES) method and Superconducting Quantum Interference Device (SQUID). XANES allowed to monitor the change in structure of STO crystals and in the local environment of Fe following the implantation and annealing steps. SQUID measurements revealed correlation between magnetic moment and Fe implantation dose. Ferromagnetic hysteresis was observed on selected Fe-implanted STO at 5 K. The observed magnetic properties can be correlated with the several Fe oxide phases in addition to the presence of O/Ti vacancies.

Lobacheva, O.; Goncharova, L. V.; Chavarha, M.; Sham, T. K. [Department of Physics and Astronomy, and Department of Chemistry, University of Western Ontario, London, ON N6A 5B7 (Canada)

2014-03-31T23:59:59.000Z

176

Single Ion Implantation and Deterministic Doping  

SciTech Connect (OSTI)

The presence of single atoms, e.g. dopant atoms, in sub-100 nm scale electronic devices can affect the device characteristics, such as the threshold voltage of transistors, or the sub-threshold currents. Fluctuations of the number of dopant atoms thus poses a complication for transistor scaling. In a complementary view, new opportunities emerge when novel functionality can be implemented in devices deterministically doped with single atoms. The grand price of the latter might be a large scale quantum computer, where quantum bits (qubits) are encoded e.g. in the spin states of electrons and nuclei of single dopant atoms in silicon, or in color centers in diamond. Both the possible detrimental effects of dopant fluctuations and single atom device ideas motivate the development of reliable single atom doping techniques which are the subject of this chapter. Single atom doping can be approached with top down and bottom up techniques. Top down refers to the placement of dopant atoms into a more or less structured matrix environment, like a transistor in silicon. Bottom up refers to approaches to introduce single dopant atoms during the growth of the host matrix e.g. by directed self-assembly and scanning probe assisted lithography. Bottom up approaches are discussed in Chapter XYZ. Since the late 1960's, ion implantation has been a widely used technique to introduce dopant atoms into silicon and other materials in order to modify their electronic properties. It works particularly well in silicon since the damage to the crystal lattice that is induced by ion implantation can be repaired by thermal annealing. In addition, the introduced dopant atoms can be incorporated with high efficiency into lattice position in the silicon host crystal which makes them electrically active. This is not the case for e.g. diamond, which makes ion implantation doping to engineer the electrical properties of diamond, especially for n-type doping much harder then for silicon. Ion implantation is usually a highly statistical process, where high fluences of energetic ions, ranging from {approx}10{sup 9} to >10{sup 16} cm{sup -2} are implanted. For single atom device development, control over the absolute number of ions is needed and ions have to be placed with high spatial resolution. In the following sections we will discuss a series of approaches to single ion implantation with regard to single ion impact sensing and control of single ion positioning.

Schenkel, Thomas

2010-06-11T23:59:59.000Z

177

Bioactive glass coatings for orthopedic metallic implants  

SciTech Connect (OSTI)

The objective of this work is to develop bioactive glass coatings for metallic orthopedic implants. A new family of glasses in the SiO2-Na2O-K2O-CaO-MgO-P2O5 system has been synthesized and characterized. The glass properties (thermal expansion, softening and transformation temperatures, density and hardness) are in line with the predictions of established empirical models. The optimized firing conditions to fabricate coatings on Ti-based and Co-Cr alloys have been determined and related to the glass properties and the interfacial reactions. Excellent adhesion to alloys has been achieved through the formation of 100-200 nm thick interfacial layers (Ti5Si3 on Ti-based alloys and CrOx on Co-Cr). Finally, glass coatings, approximately 100 mu m thick, have been fabricated onto commercial Ti alloy-based dental implants.

Lopez-Esteban, Sonia; Saiz, Eduardo; Fujino, Sigheru; Oku, Takeo; Suganuma, Katsuaki; Tomsia, Antoni P.

2003-06-30T23:59:59.000Z

178

Composites for Aerospace and Transportation As the fuel costs and environment concerns continue to increase, so does the demand for composite  

E-Print Network [OSTI]

Composites for Aerospace and Transportation As the fuel costs and environment concerns continue to increase, so does the demand for composite materials for aerospace and transportation applications. Polymer composites are inherited lighter than their metallic counterparts resulting in significant weight reduction

Li, Mo

179

American Institute of Aeronautics and Astronautics, Infotech@Aerospace Conference, Paper No. 2005-7077 A Small Semi-Autonomous Rotary-Wing Unmanned Air  

E-Print Network [OSTI]

-7077 1 A Small Semi-Autonomous Rotary-Wing Unmanned Air Vehicle (UAV) Scott D. Hanford* , Lyle N. Long System (GPS) will not work indoors, so other sensors will have to be used for indoor flight. The software. * NSF Fellow, Aerospace Engineering, Member AIAA, sdh187@psu.edu. Professor, Aerospace Engineering

180

Production of Endohedral Fullerenes by Ion Implantation  

SciTech Connect (OSTI)

The empty interior cavity of fullerenes has long been touted for containment of radionuclides during in vivo transport, during radioimmunotherapy (RIT) and radioimaging for example. As the chemistry required to open a hole in fullerene is complex and exceedingly unlikely to occur in vivo, and conformational stability of the fullerene cage is absolute, atoms trapped within fullerenes can only be released during extremely energetic events. Encapsulating radionuclides in fullerenes could therefore potentially eliminate undesired toxicity resulting from leakage and catabolism of radionuclides administered with other techniques. At the start of this project however, methods for production of transition metal and p-electron metal endohedral fullerenes were completely unknown, and only one method for production of endohedral radiofullerenes was known. They therefore investigated three different methods for the production of therapeutically useful endohedral metallofullerenes: (1) implantation of ions using the high intensity ion beam at the Oak Ridge National Laboratory (ORNL) Surface Modification and Characterization Research Center (SMAC) and fullerenes as the target; (2) implantation of ions using the recoil energy following alpha decay; and (3) implantation of ions using the recoil energy following neutron capture, using ORNL's High Flux Isotope Reactor (HFIR) as a thermal neutron source. While they were unable to obtain evidence of successful implantation using the ion beam at SMAC, recoil following alpha decay and neutron capture were both found to be economically viable methods for the production of therapeutically useful radiofullerenes. In this report, the procedures for preparing fullerenes containing the isotopes {sup 212}Pb, {sup 212}Bi, {sup 213}Bi, and {sup 177}Lu are described. None of these endohedral fullerenes had ever previously been prepared, and all of these radioisotopes are actively under investigation for RIT. Additionally, the chemistry for derivatizing the radiofullerenes for water-solubility and a method for removing exohedral radionuclides are reported. The methods and chemistry developed during this CRADA are the crucial first steps for the development of fullerenes as a method superior to existing technologies for in vivo transport of radionuclides.

Diener, M.D.; Alford, J. M.; Mirzadeh, S.

2007-05-31T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Environmental study of the National Aerospace Plane. Final report, 1 December 1991-30 December 1992  

SciTech Connect (OSTI)

The overall objective of the United States (US) National Aero-Space Plane (NASP) Program is to develop hypersonic technologies required for future military and Civilian aerospace plane systems to reduce payload cost to orbit and provide for flexible-responsive space operations. If successful, the NASP Program will be the stimulus for developing a whole new class of airbreathing hypersonic aircraft powered by clean-burning scramjet engines using liquid hydrogen as the primary fuel. As part of this development, the potential to cause environmental impacts from these type of vehicles must be considered and analyzed. This process has been initiated using the NASP Program's proposed X-30 flight research vehicle and flight test program as a basis for analysis. Environmental issues addressed include noise and sonic booms, stratospheric ozone depletion, public health and safety, hazardous materials/waste, air quality, biological and cultural resources, geology and soils, and water use. Although this study is not yet complete, preliminary analysis has determined that the X-30 vehicle and flight test program would have minimal environmental impact.

Brown, C.; Wierzbanowski, T.; Reda, H.; Duecker, G.T.

1992-12-01T23:59:59.000Z

182

Method of electroplating a conversion electron emitting source on implant  

DOE Patents [OSTI]

Methods for preparing an implant coated with a conversion electron emitting source (CEES) are disclosed. The typical method includes cleaning the surface of the implant; placing the implant in an activating solution comprising hydrochloric acid to activate the surface; reducing the surface by H.sub.2 evolution in H.sub.2SO.sub.4 solution; and placing the implant in an electroplating solution that includes ions of the CEES, HCl, H.sub.2SO.sub.4, and resorcinol, gelatin, or a combination thereof. Alternatively, before tin plating, a seed layer is formed on the surface. The electroplated CEES coating can be further protected and stabilized by annealing in a heated oven, by passivation, or by being covered with a protective film. The invention also relates to a holding device for holding an implant, wherein the device selectively prevents electrodeposition on the portions of the implant contacting the device.

Srivastava, Suresh C. (Setauket, NY); Gonzales, Gilbert R. (New York, NY); Adzic, Radoslav (East Setauket, NY); Meinken, George E. (Middle Island, NY)

2012-02-14T23:59:59.000Z

183

Defects and diffusion in MeV implanted silicon  

SciTech Connect (OSTI)

In this work we demonstrate that the defects that are created by 2-MeV Si ions can interact with dopant atoms both during implantation and during post-implant annealing. We show that the interstitials and vacancies created during MeV Si implantation result in a radiation enhanced diffusion of B and Sb markers, respectively, when the temperature of implantation is above the threshold temperature for formation of mobile dopant complexes. With the use of these dopant markers we also demonstrate that a vacancy-rich near surface region results during post-implant annealing of MeV implanted silicon. The depth distribution and the thermal evolution of clustered vacancies was measured by a Au labeling technique.

Venezia, V. C.; Haynes, T. E.; Agarwal, Aditya; Gossmann, H.-J.; Pelaz, L.; Jacobson, D. C.; Eaglesham, D. J.; Duggan, J. L. [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States); Solid State Division, Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States); Semiconductor Equipment Operations, Eaton Corporation, 55 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States); Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States); Department of Physics, University of North Texas, Denton, Texas 76201 (United States)

1999-06-10T23:59:59.000Z

184

Porous coatings from wire mesh for bone implants  

DOE Patents [OSTI]

A method of coating areas of bone implant elements and the resulting implant having a porous coating are described. Preselected surface areas are covered by a preform made from continuous woven lengths of wire. The preform is compressed and heated to assure that diffusion bonding occurs between the wire surfaces and between the surface boundaries of the implant element and the wire surfaces in contact with it. Porosity is achieved by control of the resulting voids between the bonded wire portions.

Sump, Kenneth R. (Richland, WA)

1986-01-01T23:59:59.000Z

185

THE AEROSPACE  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSite A/Plot3,Suirr.j:

186

THE AEROSPACE  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSite A/Plot3,Suirr.j:Suile

187

ace dental implant: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

31) 1750 Nelson, Tim 23 Comparison of clinically projected and radiographically optimal implant fixture placement. Open Access Theses and Dissertations Summary: ??M.S....

188

Beryllium-7 Implantation in Plastics for Prosthesis Wear Studies...  

Office of Science (SC) Website

instrumentation: 7Be Implantation in Plastics for Prosthesis Wear Studies Developed at: Oak Ridge National Laboratory, Holifield Radioactive Ion Beam Facility (HRIBF) Developed...

189

Improving Ion Implanter Productivity with In-situ Cleaning  

SciTech Connect (OSTI)

Ion source lifetime is generally a critical factor in overall implanter productivity. However, extended ion source life only provides value in a manufacturing environment if the ion beam remains stable. As an ion source ages, apertures and insulators become coated with conductive dopant residues which cause beam instabilities, resulting in implant stoppages. These stoppages create failures and/or assists which are logged in the implanter's data files. Analog Devices has recently evaluated in-situ ion source cleaning based on use of xenon difluoride chemistry. The paper will describe how the in-situ cleaning decreased logged failures/assists, resulting in increased implanter productivity.

Bishop, Steve [ATMI Inc., 7 Commerce Drive, Danbury CT (United States); Perry, Alfred [Analog Devices, 804 Woburn Street, Wilmington, MA (United States)

2011-01-07T23:59:59.000Z

190

alejados del implante: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Purpose: Permanent prostate brachytherapy (PPB) as a treatment option for prostate cancer requires implantation of 80-150 radioactive iodine-125 (I-125) "seeds" into the...

191

Biocompatible implants and methods of making and attaching the same  

DOE Patents [OSTI]

The invention provides a biocompatible silicone implant that can be securely affixed to living tissue through interaction with integral membrane proteins (integrins). A silicone article containing a laser-activated surface is utilized to make the implant. One example is an implantable prosthesis to treat blindness caused by outer retinal degenerative diseases. The device bypasses damaged photoreceptors and electrically stimulates the undamaged neurons of the retina. Electrical stimulation is achieved using a silicone microelectrode array (MEA). A safe, protein adhesive is used in attaching the MEA to the retinal surface and assist in alleviating focal pressure effects. Methods of making and attaching such implants are also provided.

Rowley, Adrian P; Laude, Lucien D; Humayun, Mark S; Weiland, James D; Lotfi, Atoosa; Markland, Jr., Francis S

2014-10-07T23:59:59.000Z

192

An extensive analysis of modified nanotube surfaces for next-generation orthopedic implants  

E-Print Network [OSTI]

of cemented versus cementless press-fit condylar total kneecemented implants or press-fit implants. For cemented boneThe second approach is to use press-fit implants, which are

Frandsen, Christine Jeanette

2012-01-01T23:59:59.000Z

193

AIAA Aerospace Sciences Meeting and Exhibit, 7-10 January 2008, Reno, NV Comparative Study of 3D Wing Drag  

E-Print Network [OSTI]

Roman§ The Boeing Company, USA Neal Harrison¶ The Boeing Company, USA John Vassberg The Boeing Company optimization tools were used: SYN107 (Intel- ligent Aerodynamics Int'l), MDOPT (The Boeing Company) and OPTIMAS (Israel Aerospace Industries). The first tool employs gradient-based search techniques using

Jameson, Antony

194

Major in Aerospace Engineering Master of Engineering (with creative component) A minimum of 27 credits of acceptable  

E-Print Network [OSTI]

Major in Aerospace Engineering Master of Engineering (with creative component) ­ A minimum of 27 Engineering along with a minimum of 3 credits of Aer E 599 (creative component) must be taken. The POS Mechanics Master of Engineering (with creative component) ­ A minimum of 24 credits of acceptable course

Lin, Zhiqun

195

The CU Aerospace / VACCO Propulsion Unit for CubeSats (PUC) is a complete high-performance and  

E-Print Network [OSTI]

such as solar panels and magnetic torquers. For increased performance, or to meet customer specific missionThe CU Aerospace / VACCO Propulsion Unit for CubeSats (PUC) is a complete high necessary propulsion subsystems, including controller, power processing unit, micro-cavity discharge

Carroll, David L.

196

ESA Workshop on Aerospace EMC Florence, Italy / 30 March 1 April 2009 A NOVEL WAY OF USING REVERBERATION CHAMBERS  

E-Print Network [OSTI]

ESA Workshop on Aerospace EMC Florence, Italy / 30 March ­ 1 April 2009 A NOVEL WAY OF USING of facility, among others, are often used nowadays for high frequency EMC radiated-immunity tests of using RCs for EMC testing with the generation of high-intensity deterministic temporal wavefronts inside

Paris-Sud XI, Université de

197

Smart Materials and Adaptive Systems (3 Credits) Instructor Gregory Washington, Mechanical and Aerospace Engineering, UC Irvine (gnwashin@uci.edu)  

E-Print Network [OSTI]

and Aerospace Engineering, UC Irvine (gnwashin@uci.edu) Synopsis Modeling and control of smart materials fluids. Applications to real world systems will be emphasized Offering 2014 Summer Semester Audience Year in actuator, sensor and controlled materials design Apply smart materials to practical engineering systems

198

AIAA Paper No. 2005-6982 InfoTech@Aerospace Conference, American Institute of Aeronautics and Astronautics, Sept., 2005  

E-Print Network [OSTI]

and Astronautics, Sept., 2005 1 An Undergraduate Course in Unmanned Air Vehicles Lyle N. Long* , Scott D. Hanford of unmanned air vehicles. A two semester course at the senior-level in the Aerospace Engineering Department wing loading. In the second semester, teams of students worked together to build a larger aircraft from

199

44th Aerospace Sciences Meeting and Exhibit, January 9-12, 2006, Reno, Nevada Turbine Tip Clearance Flow Control  

E-Print Network [OSTI]

clearance between the rotor blade tips and outer casing. For a turbine, this clearance is on the order in an engine. In a turbine stage, blade rotation is caused by work extraction through turning of the post44th Aerospace Sciences Meeting and Exhibit, January 9-12, 2006, Reno, Nevada Turbine Tip Clearance

Morris, Scott C.

200

researchbriefs iit magazine | 5  

E-Print Network [OSTI]

in automotive parts, electronics, components for the aerospace industry, and biomedical implants such as stents

Heller, Barbara

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Beam Profile Disturbances from Implantable Pacemakers or Implantable Cardioverter-Defibrillator Interactions  

SciTech Connect (OSTI)

The medical community is advocating for progressive improvement in the design of implantable cardioverter-defibrillators and implantable pacemakers to accommodate elevations in dose limitation criteria. With advancement already made for magnetic resonance imaging compatibility in some, a greater need is present to inform the radiation oncologist and medical physicist regarding treatment planning beam profile changes when such devices are in the field of a therapeutic radiation beam. Treatment plan modeling was conducted to simulate effects induced by Medtronic, Inc.-manufactured devices on therapeutic radiation beams. As a continuation of grant-supported research, we show that radial and transverse open beam profiles of a medical accelerator were altered when compared with profiles resulting when implantable pacemakers and cardioverter-defibrillators are placed directly in the beam. Results are markedly different between the 2 devices in the axial plane and the sagittal planes. Vast differences are also presented for the therapeutic beams at 6-MV and 18-MV x-ray energies. Maximum changes in percentage depth dose are observed for the implantable cardioverter-defibrillator as 9.3% at 6 MV and 10.1% at 18 MV, with worst distance to agreement of isodose lines at 2.3 cm and 1.3 cm, respectively. For the implantable pacemaker, the maximum changes in percentage depth dose were observed as 10.7% at 6 MV and 6.9% at 18 MV, with worst distance to agreement of isodose lines at 2.5 cm and 1.9 cm, respectively. No differences were discernible for the defibrillation leads and the pacing lead.

Gossman, Michael S., E-mail: mgossman@tsrcc.com [Tri-State Regional Cancer Center, Medical Physics Section, Ashland, KY (United States); Comprehensive Heart and Vascular Associates, Heart and Vascular Center, Ashland, KY (United States); Medtronic, Inc., External Research Program, Mounds View, MN (United States); Nagra, Bipinpreet; Graves-Calhoun, Alison; Wilkinson, Jeffrey [Tri-State Regional Cancer Center, Medical Physics Section, Ashland, KY (United States); Comprehensive Heart and Vascular Associates, Heart and Vascular Center, Ashland, KY (United States); Medtronic, Inc., External Research Program, Mounds View, MN (United States)

2011-01-01T23:59:59.000Z

202

E-Print Network 3.0 - all-polyethylene glenoid implant Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

polyethylene glenoid implant Search Powered by Explorit Topic List Advanced Search Sample search results for: all-polyethylene glenoid implant Page: << < 1 2 3 4 5 > >> 1...

203

An Algorithm for Computing Customized 3D Printed Implants with Curvature Constrained Channels for Enhancing  

E-Print Network [OSTI]

An Algorithm for Computing Customized 3D Printed Implants with Curvature Constrained Channels results in 3D printing and steerable needle motion planning to create customized implants containing

North Carolina at Chapel Hill, University of

204

E-Print Network 3.0 - actuales del implante Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

implants Christos Strydis 1 , Georgi N.Gaydadjiev 1... . A par- ticular sub eld - biomedical, microelectronic implants - has emerged and, in time, gained much... momentum....

205

ECE 331 -Biomedical Instrumentation Department of Electrical & Computer Engineering, UBC Implant Design & Total Hip Arthroplasty  

E-Print Network [OSTI]

ECE 331 - Biomedical Instrumentation Department of Electrical & Computer Engineering, UBC Lab #6 screw from the implant once it is successfully implanted. #12;ECE 331 - Biomedical Instrumentation

Pulfrey, David L.

206

Atmospheric Radiation Measurement Program - unmanned aerospace vehicle: The follow-on phase  

SciTech Connect (OSTI)

Unmanned Aerospace Vehicle (UAV) demonstration flights (UDF) are designed to provide an early demonstration of the scientific utility of UAVs by using an existing UAV and instruments to measure broadband radiative flux profiles under clear sky conditions. UDF is but the first of three phases of ARM-UAV. The second phase significantly extends both the UAV measurement techniques and the available instrumentation to allow both multi-UAV measurements in cloudy skies and extended duration measurements in the tropopause. These activities build naturally to the third and final phase, that of full operational capability, i.e., UAVs capable of autonomous operations at 20-km altitudes for multiple days with a full suite of instrumentation for measuring radiative flux, cloud properties, and water vapor profiles.

Vitko, J. Jr. [Sandia National Labs., Livermore, CA (United States)

1995-04-01T23:59:59.000Z

207

Ion implantation of highly corrosive electrolyte battery components  

DOE Patents [OSTI]

A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, end sodium sulfur.

Muller, Rolf H. (Berkeley, CA); Zhang, Shengtao (Berkeley, CA)

1997-01-01T23:59:59.000Z

208

Neurophysiologic Basis for Cochlear and Auditory Brainstem Implants  

E-Print Network [OSTI]

subjected 13 individuals with the House type of cochlear implants to an extensive battery of audiologic (Michelson, 1971) and W. House (House & Ur- ban, 1973). But before that, other investigators had shown (Simmons, 1966). It was, however, Dr. William House who intro- duced cochlear implants as a means

O'Toole, Alice J.

209

Ion implantation of highly corrosive electrolyte battery components  

DOE Patents [OSTI]

A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, and sodium sulfur. 6 figs.

Muller, R.H.; Zhang, S.

1997-01-14T23:59:59.000Z

210

Single Glucose Biofuel Cells Implanted in Rats Power Electronic Devices  

E-Print Network [OSTI]

Single Glucose Biofuel Cells Implanted in Rats Power Electronic Devices A. Zebda1,2 , S. Cosnier1 the first implanted glucose biofuel cell (GBFC) that is capable of generating sufficient power from a mammal further developments. Following recent developments in nano- and biotechnology, state-of-the-art biofuel

Boyer, Edmond

211

Graphene synthesis by ion implantation Slaven Garaj1  

E-Print Network [OSTI]

Page 1 Graphene synthesis by ion implantation Slaven Garaj1 , William Hubbard2 , and J. A We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with carbon atoms results in the surface growth of graphene films whose average thickness is controlled

Golovchenko, Jene A.

212

Graphene synthesis by ion implantation Slaven Garaj,1  

E-Print Network [OSTI]

Graphene synthesis by ion implantation Slaven Garaj,1 William Hubbard,2 and J. A. Golovchenko1,2,a demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with carbon atoms results in the surface growth of graphene films whose average thickness is controlled

Golovchenko, Jene A.

213

Ion implantation profile modeling of nitrocellulose coated substrates  

SciTech Connect (OSTI)

The modification of a standard ion implantation profile is usually achieved by carrying out successive irradiations at variable ion incident energy. Keeping this latter parameter constant, we propose an alternative way which consists in implanting the substrate through a nitrocellulose thin film shrinking during ion irradiation. Making precise use of the self-developing mechanism of nitrocellulose when functioning as an ion beam resist, we describe a simple model predicting the new implantation profile and, in particular, the concentration enhancement obtained at the surface of the substrate. The model whose fundamentals and related mathematical derivations are given, is critically dependent on the diffusion mechanism of the implanted ions in the substrate. Comparison between simulated and preliminary experimental implantation profiles of Cs in polyparaphenylenesulfide is made and does not show a major divergence considering that the only diffusion mechanism taken into account is the thermal diffusion.

Merhari, L.; Le Huee, C.; Belorgeot, C.; Bahna, Z. (University of Limoges, Laboratoire d'Electronique des Polymeres sous Faisceaux Ioniques, 123, avenue Albert Thomas 87060 Limoges (France))

1991-11-25T23:59:59.000Z

214

Implant for in-vivo parameter monitoring, processing and transmitting  

DOE Patents [OSTI]

The present invention relates to a completely implantable intracranial pressure monitor, which can couple to existing fluid shunting systems as well as other internal monitoring probes. The implant sensor produces an analog data signal which is then converted electronically to a digital pulse by generation of a spreading code signal and then transmitted to a location outside the patient by a radio-frequency transmitter to an external receiver. The implanted device can receive power from an internal source as well as an inductive external source. Remote control of the implant is also provided by a control receiver which passes commands from an external source to the implant system logic. Alarm parameters can be programmed into the device which are capable of producing an audible or visual alarm signal. The utility of the monitor can be greatly expanded by using multiple pressure sensors simultaneously or by combining sensors of various physiological types.

Ericson, Milton N. (Knoxville, TN); McKnight, Timothy E. (Greenback, TN); Smith, Stephen F. (London, TN); Hylton, James O. (Clinton, TN)

2009-11-24T23:59:59.000Z

215

OFFICE OF MATERIALS & LOGISTICS MANAGEMENT Policy for Charge Capture of Implant(s), Instrument(s), Device(s)  

E-Print Network [OSTI]

OFFICE OF MATERIALS & LOGISTICS MANAGEMENT Policy for Charge Capture of Implant(s), Instrument entirety and fax to Materials Management at x1993. 3.0 Materials Management must complete Section 2 Service. Materials Management will provide the product part number, cost and charge code, if applicable

Oliver, Douglas L.

216

Implantation conditions for diamond nanocrystal formation in amorphous silica  

SciTech Connect (OSTI)

We present a study of carbon ion implantation in amorphous silica, which, followed by annealing in a hydrogen-rich environment, leads to preferential formation of carbon nanocrystals with cubic diamond (c-diamond), face-centered cubic (n-diamond), or simple cubic (i-carbon) carbon crystal lattices. Two different annealing treatments were used: furnace annealing for 1 h and rapid thermal annealing for a brief period, which enables monitoring of early nucleation events. The influence of implanted dose and annealing type on carbon and hydrogen concentrations, clustering, and bonding were investigated. Rutherford backscattering, elastic recoil detection analysis, infrared spectroscopy, transmission electron microscopy, selected area electron diffraction, ultraviolet-visible absorption measurements, and Raman spectroscopy were used to study these carbon formations. These results, combined with the results of previous investigations on similar systems, show that preferential formation of different carbon phases (diamond, n-diamond, or i-carbon) depends on implantation energy, implantation dose, and annealing conditions. Diamond nanocrystals formed at a relatively low carbon volume density are achieved by deeper implantation and/or lower implanted dose. Higher volume densities led to n-diamond and finally to i-carbon crystal formation. This observed behavior is related to damage sites induced by implantation. The optical properties of different carbon nanocrystal phases were significantly different.

Buljan, Maja; Radovic, Iva Bogdanovic; Desnica, Uros V.; Ivanda, Mile; Jaksic, Milko [Ruder Boskovic Institute, P.O. Box 180, 10002 Zagreb (Croatia); Saguy, Cecile; Kalish, Rafi [Physics Department and Solid State Institute, Technion, Haifa 32000 (Israel); Djerdj, Igor [Department of Materials, Swiss Federal Institute of Technology (ETH) Zuerich, Wolfgang-Pauli-Str. 10, CH-8093 Zuerich (Switzerland); Tonejc, Andelka [Faculty of Science, Department of Physics, University of Zagreb, 10000 Zagreb (Croatia); Gamulin, Ozren [School of Medicine, Zagreb University, 10000 Zagreb (Croatia)

2008-08-01T23:59:59.000Z

217

Glass/ceramic coatings for implants  

SciTech Connect (OSTI)

Glass coatings on metals including Ti, Ti6A14V and CrCo were prepared for use as implants. The composition of the glasses was tailored to match the thermal expansion of the substrate metal. By controlling the firing atmosphere, time, and temperature, it was possible to control the reactivity between the glass and the alloy and to fabricate coatings (25-150 .mu.m thick) with excellent adhesion to the substrate. The optimum firing temperatures ranged between 800 and 840.degree. C. at times up to 1 min in air or 15 min in N.sub.2. The same basic technique was used to create multilayered coatings with concentration gradients of hydroxyapatite (HA) particles and SiO.sub.2.

Tomsia, Antoni P. (Pinole, CA); Saiz, Eduardo (Berkeley, CA); Gomez-Vega, Jose M. (Nagoya, JP); Marshall, Sally J. (Larkspur, CA); Marshall, Grayson W. (Larkspur, CA)

2011-09-06T23:59:59.000Z

218

Noninvasive quantification of drug delivery from an implantable MEMS device  

E-Print Network [OSTI]

(cont.) sensors in vivo in real time and corroborated by scintillation of urine samples. The goal of monitoring drug delivery from an implant in vivo, in real time and without disturbing the tissue environment, was ...

Johnson, Audrey M., 1976-

2005-01-01T23:59:59.000Z

219

Interfacial Interactions between Implant Electrode and Biological Environment  

E-Print Network [OSTI]

interactions to the charge transport. The interfacial interactions of an implanted electrode with neural system will be studied in two types of electrodes: silver and graphene coated. The interfacial impedance of both samples will be studied using EIS...

Chiu, Cheng-Wei 1979-

2012-11-06T23:59:59.000Z

220

Magnetic phase composition of strontium titanate implanted with iron ions  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer The origin of RT-ferromagnetism in iron implanted strontium titanate. Black-Right-Pointing-Pointer Metallic iron nanoclusters form during implantation and define magnetic behaviour. Black-Right-Pointing-Pointer Paramagnetic at room temperature iron-substituted strontium titanate identified. -- Abstract: Thin magnetic films were synthesized by means of implantation of iron ions into single-crystalline (1 0 0) substrates of strontium titanate. Depth-selective conversion electron Moessbauer spectroscopy (DCEMS) indicates that origin of the samples magnetism is {alpha}-Fe nanoparticles. Iron-substituted strontium titanate was also identified but with paramagnetic behaviour at room temperature. Surface magneto-optical Kerr effect (SMOKE) confirms that the films reveal superparamagnetism (the low-fluence sample) or ferromagnetism (the high-fluence sample), and demonstrate absence of magnetic in-plane anisotropy. These findings highlight iron implanted strontium titanate as a promising candidate for composite multiferroic material and also for gas sensing applications.

Dulov, E.N., E-mail: evgeny.dulov@ksu.ru [Kazan Federal University, 420008 Kazan (Russian Federation); Ivoilov, N.G.; Strebkov, O.A. [Kazan Federal University, 420008 Kazan (Russian Federation)] [Kazan Federal University, 420008 Kazan (Russian Federation); Tagirov, L.R. [Kazan Federal University, 420008 Kazan (Russian Federation) [Kazan Federal University, 420008 Kazan (Russian Federation); Zavoisky Physico-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, 420029 Kazan (Russian Federation); Nuzhdin, V.I. [Zavoisky Physico-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, 420029 Kazan (Russian Federation)] [Zavoisky Physico-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, 420029 Kazan (Russian Federation); Khaibullin, R.I. [Kazan Federal University, 420008 Kazan (Russian Federation) [Kazan Federal University, 420008 Kazan (Russian Federation); Zavoisky Physico-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, 420029 Kazan (Russian Federation); Kazan, S. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey)] [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Mikailzade, F.A. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey) [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Institute of Physics, Azerbaijan National Academy of Sciences, H. Javid Av. 33, AZ 1143, Baku (Azerbaijan)

2011-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

A fully implantable intracochlear drug delivery device : development and characterization  

E-Print Network [OSTI]

In a collaborative effort with the Massachusetts Eye and Ear Infirmary, Draper Laboratory is developing an implantable microfluidic drug delivery system for long-term treatment of inner ear disorders and prevention of ...

Swan, Erin Eileen Leary, 1976-

2009-01-01T23:59:59.000Z

222

Surface acoustic wave probe implant for predicting epileptic seizures  

DOE Patents [OSTI]

A system and method for predicting and avoiding a seizure in a patient. The system and method includes use of an implanted surface acoustic wave probe and coupled RF antenna to monitor temperature of the patient's brain, critical changes in the temperature characteristic of a precursor to the seizure. The system can activate an implanted cooling unit which can avoid or minimize a seizure in the patient.

Gopalsami, Nachappa (Naperville, IL); Kulikov, Stanislav (Sarov, RU); Osorio, Ivan (Leawood, KS); Raptis, Apostolos C. (Downers Grove, IL)

2012-04-24T23:59:59.000Z

223

Ion implanted step recovery diodes - influence of material parameter variations  

E-Print Network [OSTI]

ION IMPLANTED STEP RECOVERY DIODES ? INFLUENCE OF MATERIAL PARAMETER VARIATIONS A Thesis by THOMAS MICHAEL MOSMAN Submitted to the Craduate College of Texas ARM University in partial fulfillment of the requirement for the degree of MASTER... OF SCIENCE December 1974 Major Subject: Electrical Engineering ION IMPLANTED STEP RECOVERY DIODES ? INFLUENCE OF MATERIAL PARAMETER VARIATIONS A Thesis by THOMAS MICHAEL MOSMAN Approved as to style and content by: (Chairman of Committee) (Head f...

Mosman, Thomas Michael

2012-06-07T23:59:59.000Z

224

Photosensitivity enhancement of PLZT ceramics by positive ion implantation  

DOE Patents [OSTI]

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.

Peercy, P.S.; Land, C.E.

1980-06-13T23:59:59.000Z

225

Photosensitivity enhancement of PLZT ceramics by positive ion implantation  

DOE Patents [OSTI]

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

Land, Cecil E. (Albuquerque, NM); Peercy, Paul S. (Albuquerque, NM)

1983-01-01T23:59:59.000Z

226

Physics based analytical modelling of silicon carbide (SiC) MESFET considering different ion implantation energy with high temperature annealing.  

E-Print Network [OSTI]

??A Physics based analytical model of ion implanted SiC MESFET has been developed considering the high temperature annealing effects. The diffusion of implanted impurities has (more)

Yadavalli, Karthik Vishwanath

2015-01-01T23:59:59.000Z

227

Sequential-ion-implantation synthesis of ternary metal silicides  

SciTech Connect (OSTI)

By implanting two different metals in sequence into Si(100), we find that new ternary silicides can by synthesized with simple binary silicide structures. The synthesis of CoSi[sub 2]-type (Co,Fe)Si[sub 2], and CoSi-type (Co,Fe)Si and (Fe,Ni)Si is demonstrated. The structure is largely determined by the first implanted metal and the total dose of the two metals, allowing one to design the structure of the ternary silicide. The two implanted species occupy equivalent positions in the same structure and the metal composition may be continuously varied in a given structure. This opens new possibilities for the synthesis of ternary and multinary compounds and alloys.

Tan, Z. (Brookhaven National Laboratory, Upton, New York 11973 (United States)); Namavar, F. (Spire Corporation, Bedford, Massachusetts 01730-2396 (United States)); Heald, S.M. (Brookhaven National Laboratory, Upton, New York 11973 (United States)); Budnick, J.I. (Physics Department and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269-3046 (United States))

1993-08-09T23:59:59.000Z

228

Mesoporous silica as a membrane for ultra-thin implantable direct glucose Tushar Sharma,a  

E-Print Network [OSTI]

and worldwide.1 Consequently, there is an upsurge in the various novel implantable devices to diag- nose- dioverter defibrillator (AICD) and pacemakers. Implantable direct glucose fuel cells (biofuel cells) provide

229

E-Print Network 3.0 - applications radioaktive implantate Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

process... -169 STUDIES ON ION IMPLANTED STEEL AND TITANIUM (*) N. E. W. HARTLEY et al. AERE Harwell Berkshire. UK RCsum6... . - La technique d'implantation a haute energieest...

230

UV curing and photoresist outgassing in high energy implantation  

SciTech Connect (OSTI)

Thick photoresists, typically 3 microns or more in thickness, necessary for high energy implantation present some unique problems. The outgassing of thick photoresist In high energy applications varies from that of thinner resist and lower energies. It requires appropriate processing to cure without reticulation of field regions deformity of features, or blistering during subsequent processing. This paper examines different resist treatments and their effects on implanter pressure during processing. Data on outgassing of thick photoresist, outgassing effects on absolute dose and dose uniformity as measured by sheet resistance contour maps, and the variation in gas composition are presented.

Jones, M.A.; Erokhin, Y.; Horsky, T. [Eaton Corporation, Beverly, MA (United States)] [and others

1996-12-31T23:59:59.000Z

231

A micro-structured ion-implanted magnonic crystal  

SciTech Connect (OSTI)

We investigate spin-wave propagation in a microstructured magnonic-crystal waveguide fabricated by localized ion implantation. The irradiation caused a periodic variation in the saturation magnetization along the waveguide. As a consequence, the spin-wave transmission spectrum exhibits a set of frequency bands, where spin-wave propagation is suppressed. A weak modification of the saturation magnetization by 7% is sufficient to decrease the spin-wave transmission in the band gaps by a factor of 10. These results evidence the applicability of localized ion implantation for the fabrication of efficient micron- and nano-sized magnonic crystals for magnon spintronic applications.

Obry, Bjoern; Pirro, Philipp; Chumak, Andrii V.; Ciubotaru, Florin; Serga, Alexander A.; Hillebrands, Burkard [Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universitaet Kaiserslautern, D-67663 Kaiserslautern (Germany)] [Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universitaet Kaiserslautern, D-67663 Kaiserslautern (Germany); Braecher, Thomas [Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universitaet Kaiserslautern, D-67663 Kaiserslautern (Germany) [Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universitaet Kaiserslautern, D-67663 Kaiserslautern (Germany); Graduate School Materials Science in Mainz, D-67663 Kaiserslautern (Germany); Osten, Julia; Fassbender, Juergen [Institut fuer Ionenstrahlphysik und Materialforschung, Helmholtz-Zentrum Dresden-Rossendorf, D-01328 Dresden, Germany and Technische Universitaet Dresden, D-01062 Dresden (Germany)] [Institut fuer Ionenstrahlphysik und Materialforschung, Helmholtz-Zentrum Dresden-Rossendorf, D-01328 Dresden, Germany and Technische Universitaet Dresden, D-01062 Dresden (Germany)

2013-05-20T23:59:59.000Z

232

Medium energy ion implantation of Germanium into heated Silicon  

E-Print Network [OSTI]

flange arranged in a standard Einsel lens arrangement and a set of 13 ++12 ~6 L, 1 - Source 2 - Acceleration Column 3. - Glass Cross and 6" Diffusion 4 - Separation Magnet 5 - Gate Valve 6 - Quadrupole 7 - Rear Collimator 8 - Deflection Plates... Analysis of a, 40 keV, SXIO" ions cm' Ge Implant into 420'C FZ &111& Si. 29 300 keV He RBS analysis of two, 60 keV, 3X10" ions cm' Ge implants, rastered and unrastered, into 300'C FZ &111& Si. 30 LIST OF TABLES Table Page Cntical thickness of a Ge...

McCoy, John Curtis

1993-01-01T23:59:59.000Z

233

Development of a Novel Piezoelectric Implant to Improve the Success Rate of Spinal Fusions  

E-Print Network [OSTI]

.............................................................................................................................. 36 Negative Potential Outer Electrode ............................................................................................... 37 Implant Geometry... .............................................................................................................. 91 VIII. Proof of Concept Testing ................................................................................................................... 106 Battery Recharge Tests...

Tobaben, Nicholas

2012-08-31T23:59:59.000Z

234

E-Print Network 3.0 - acid etched implants Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

implant manu- facturers have introduced ... Source: Simmons, Craig A. - Department of Mechanical and Industrial Engineering, University of Toronto Collection: Engineering ;...

235

A Glucose Fuel Cell for Implantable BrainMachine Interfaces  

E-Print Network [OSTI]

We have developed an implantable fuel cell that generates power through glucose oxidation, producing 3:4 mW cm{2steady-state power and up to 180 mW cm{2 peak power. The fuel cell is manufactured using a novel approach, ...

Rapoport, Benjamin I.

236

auditory brain stem implantation: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

auditory brain stem implantation First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Auditory Brain Stem...

237

auditory brain stem implants: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

brain stem implants First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Auditory Brain Stem Response to...

238

PERCOLATION AND SUPERCONDUCTIVITY IN ION-IMPLANTED ALUMINIUM FILMS (*)  

E-Print Network [OSTI]

L-435 PERCOLATION AND SUPERCONDUCTIVITY IN ION-IMPLANTED ALUMINIUM FILMS (*) F. MEUNIER and P of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced superconducting transition in the superconducting transition temperature Tc of several such alloys [2], [5], [6] : Josephson tunnelling

Boyer, Edmond

239

DIFFUSION OF MAGNESIUM AND MICROSTRUCTURES IN Mg+ IMPLANTED SILICON CARBIDE  

SciTech Connect (OSTI)

Following our previous reports [ 1- 3], further isochronal annealing (2 hrs.) of the monocrystalline 6H-SiC and polycrystalline CVD 3C-SiC was performed at 1573 and 1673 K in Ar environment. SIMS data indicate that observable Mg diffusion in 6H-SiC starts and a more rapid diffusion in CVD 3C-SiC occurs at 1573 K. The implanted Mg atoms tend to diffuse deeper into the undamaged CVD 3C-SiC. The microstructure with Mg inclusions in the as-implanted SiC has been initially examined using high-resolution STEM. The presence of Mg in the TEM specimen has been confirmed based on EDS mapping. Additional monocrystalline 3C-SiC samples have been implanted at 673 K to ion fluence 3 times higher than the previous one. RBS/C analysis has been performed before and after thermal annealing at 1573 K for 12 hrs. Isothermal annealing at 1573 K is being carried out and Mg depth profiles being measured. Microstructures in both the as-implanted and annealed samples are also being examined using STEM.

Jiang, Weilin; Edwards, Danny J.; Jung, Hee Joon; Wang, Zheming; Zhu, Zihua; Roosendaal, Timothy J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

2014-08-28T23:59:59.000Z

240

artificial implantation materials: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

artificial implantation materials First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 "In Vivo" Pose...

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Highly Stripped Ion Sources for MeV Ion Implantation  

SciTech Connect (OSTI)

Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high charge state phosphorus and antimony could have resulted in a lower power consumption of 30 kW/implanter) for the following reasons (which were discovered after R&D completion): record output of high charge state phosphorous would have thermally damage wafers; record high charge state of antimony requires tool (ion implanting machine in ion implantation jargon) modification, which did not make economic sense due to the small number of users. Nevertheless, BNL has benefited from advances in high-charge state ion generation, due to high charge state ions need for RHIC preinjection. High fraction boron ion was delivered to PVI client Axcelis for retrofit and implantation testing; the source could have reduced beam preinjector power consumption by a factor of 3.5. But, since the source generated some lithium (though in miniscule amounts); last minute decision was made not to employ the source in implanters. R&D of novel transport and gasless plasmaless deceleration, as well as decaborane molecular ion source to mitigate space charge problems in low energy shallow ion implantation was also conducted though results were not yet ready for commercialization. Future work should be focused on gasless plasmaless transport and deceleration as well as on molecular ions due to their significance to low energy, shallow implantation; which is the last frontier of ion implantation. To summarize the significant accomplishments: 1. Record steady state output currents of high charge state phosphorous, P, ions in particle milli-Ampere: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA). 2. Record steady state output currents of high charge state antimony, Sb, ions in particle milli-Ampere: Sb{sup 3+} (16.2 pmA), Sb{sup 4+} (7.6 pmA), Sb{sup 5+} (3.3 pmA), and Sb{sup 6+} (2.2 pmA). 3. 70% output of boron ion current (compared to 25% in present state-of-the-art) from a Calutron-Bemas ion source. These accomplishments have the potential of benefiting the semiconductor manufacturing industry by lowering power consumption by as much as 30 kW per ion implanter. Major problem w

Hershcovitch, Ady

2009-06-30T23:59:59.000Z

242

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

243

Defending Resource Depletion Attacks on Implantable Medical Devices  

E-Print Network [OSTI]

and storage. In this research, we identify a new kind of attacks on IMDs - Resource Depletion (RD) attacks information. IMD attacks may also be launched by insurance companies. IMD readers may be installed near, and storage. An IMD is implanted in patient's body and expected to run for several years. Typical IMDs

Wu, Jie

244

Surgical implantation techniques for electronic tags in fish  

SciTech Connect (OSTI)

Intracoelomic implantation of transmitters into fish requires making a surgical incision, incision closure, and other surgery related techniques; however, the tools and techniques used in the surgical process vary widely. We review the available literature and focus on tools and techniques used for conducting surgery on juvenile salmonids because of the large amount of research that is conducted on them. The use of sterilized surgical instruments properly selected for a given size of fish will minimize tissue damage and infection rates, and speed the wound healing of fish implanted with transmitters. For the implantation of transmitters into small fish, the optimal surgical methods include making an incision on the ventral midline along the linea alba (for studies under 1 month), protecting the viscera (by lifting the skin with forceps while creating the incision), and using absorbable monofilament suture with a small-swaged-on swaged-on tapered or reverse-cutting needle. Standardizing the implantation techniques to be used in a study involving particular species and age classes of fish will improve survival and transmitter retention while allowing for comparisons to be made among studies and across multiple years. This review should be useful for researchers working on juvenile salmonids and other sizes and species of fish.

Wagner, Glenn N.; Cooke, Steven J.; Brown, Richard S.; Deters, Katherine A.

2011-01-01T23:59:59.000Z

245

INTRACELLULAR NEURONAL RECORDING WITH FLEXIBLE MICRO-MACHINED PROBE IMPLANTS  

E-Print Network [OSTI]

, for the first time, an implantable device can record intracellular action potentials from a single neuron (Pd5 electrodes used conventionally for similar intracellular recording purposes. The success of this prototype due to their small dimensions, compact geometry, and the ease with which multi electrode recording

246

Diffusion and impurity segregation in hydrogen-implanted silicon carbide  

SciTech Connect (OSTI)

Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H{sup +} implantation was carried out with energies of 200?keV, 500?keV, or 1?MeV to doses of 1??10{sup 16}, 1??10{sup 17}, or 2??10{sup 17} ion/cm{sup 2}, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100?C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1?MeV implant heated to 1100?C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 10{sup 16} O atoms/cm{sup 2} situated at a depth close to that of the peak of the implanted H{sup +}. Similarly, 1100?C annealing of a 200?keV implant induces the formation of a thin oxide (4?nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Barcz, A., E-mail: barcz@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Kozubal, M.; Ratajczak, J.; Go?aszewska, K. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Jakie?a, R.; Dyczewski, J.; Wojciechowski, T. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Celler, G. K. [Institute for Advanced Materials, Devices, and Nanotechnology (IAMDN)/Department of Materials Science and Engineering, Rutgers University, New Brunswick, New Jersey 08901 (United States)

2014-06-14T23:59:59.000Z

247

Intracranial electrode implantation produces regional neuroinflammation and memory deficits in rats  

SciTech Connect (OSTI)

Deep brain stimulation (DBS) is an established treatment for advanced Parkinson's disease (PD). The procedure entails intracranial implantation of an electrode in a specific brain structure followed by chronic stimulation. Although the beneficial effects of DBS on motor symptoms in PD are well known, it is often accompanied by cognitive impairments, the origin of which is not fully understood. To explore the possible contribution of the surgical procedure itself, we studied the effect of electrode implantation in the subthalamic nucleus (STN) on regional neuroinflammation and memory function in rats implanted bilaterally with stainless steel electrodes. Age-matched sham and intact rats were used as controls. Brains were removed 1 or 8 weeks post-implantation and processed for in vitro autoradiography with [(3)H]PK11195, an established marker of microglial activation. Memory function was assessed by the novel object recognition test (ORT) before surgery and 2 and 8 weeks after surgery. Electrode implantation produced region-dependent changes in ligand binding density in the implanted brains at 1 as well as 8 weeks post-implantation. Cortical regions showed more intense and widespread neuroinflammation than striatal or thalamic structures. Furthermore, implanted animals showed deficits in ORT performance 2 and 8 weeks post-implantation. Thus, electrode implantation resulted in a widespread and persistent neuroinflammation and sustained memory impairment. These results suggest that the insertion and continued presence of electrodes in the brain, even without stimulation, may lead to inflammation-mediated cognitive deficits in susceptible individuals, as observed in patients treated with DBS.

Kuttner-Hirshler, Y.; Biegon, A.; Kuttner-Hirshler, Y.; Polat, U.; Biegon, A.

2009-12-21T23:59:59.000Z

248

Method of making silicon on insalator material using oxygen implantation  

DOE Patents [OSTI]

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

Hite, Larry R. (Dallas, TX); Houston, Ted (Richardson, TX); Matloubian, Mishel (Dallas, TX)

1989-01-01T23:59:59.000Z

249

Microstructures of Si surface layers implanted with Cu  

SciTech Connect (OSTI)

Microstructures of Si ion-implanted with Cu have been characterized by TEM after annealing. For 1.2 at.%, the Cu is trapped at planar defects, but for 10 at.%, {eta}-Cu{sub 3}Si forms and Cu diffuses at its equilibrium solubility. These observations allow proper evaluation of the binding energies of Cu to previously formed internal cavities (2.2 eV) and {eta}-Cu{sub 3}Si (1.7 eV). The 10 at.% Cu layer promotes oxidation of Si catalyzed by {eta}-Cu{sub 3}Si. The microstructures also indicate that Si implanted with {approximately}2 at.% Cu reforms epitaxially with embedded defects after 8 hr at 700C, but for {approximately}10 at.% Cu, epitaxy is not recovered after 6 hours at 600C.

Follstaedt, D.M.; Myers, S.M.

1993-12-31T23:59:59.000Z

250

Origin of reverse annealing effect in hydrogen-implanted silicon  

SciTech Connect (OSTI)

In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

2009-01-01T23:59:59.000Z

251

Subcutaneous Venous Port Implantation in Patients with Bilateral Breast Surgery  

SciTech Connect (OSTI)

The purpose of this study was to evaluate the long-term follow-up results of subcutaneous venous ports implanted in patients with bilateral mastectomies. We retrospectively reviewed the hospital charts and the electronic database of 17 patients with bilateral mastectomies whom had venous port implantation in our interventional radiology suit. A total of 17 ports were implanted to the paramedian (n = 3) and anterolateral (standard; n = 12) chest wall, on the trapezius muscle (n = 1), and to the antecubital fossa (n = 1). The mean age was 48.29 years (range: 35-60 years). The mean time interval from time of surgery to port implantation was 34 months (range: 1-84 months). The mean follow-up time was 15 months (range: 7-39 months). Follow-up parameters and classification of the complications was defined according to the SIR guidelines. No procedure-related complication occurred. A single case of mild late infection was noted and the infection rate was 0.19/1000 catheter days. Infusion chemotherapy administration was still going on in eight patients. Two patients died during the follow-up and four patients were lost after 6 months. Port removal was performed in three patients at follow-up because of the end of treatment. One trapezius port and one paramedian port weres among the removed ports without any problem. Although we have a limited number of patients, port placement to the anterior chest wall, either paramedian or anterolateral, on the trapezius muscle or to the antecubital fossa depending on the extent of the bilateral breast surgeries that can be performed with low complication rates by a careful patient and anatomical location selection by involving the patients in the decision-making process. We believe that patient education and knowledge of possible complications have high importance in follow-up.

Peynircioglu, Bora, E-mail: borapeynir@gmail.com; Arslan, E. Bengi; Cil, Barbaros E.; Geyik, Serdar; Hazirolan, Tuncay [Hacettepe University, School of Medicine, Department of Radiology (Turkey); Konan, Ali [Hacettepe University, School of Medicine, Department of General Surgery (Turkey); Balkanci, Ferhun [Hacettepe University, School of Medicine, Department of Radiology (Turkey)

2007-06-15T23:59:59.000Z

252

E-Print Network 3.0 - aortic prosthesis implantation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cardiac pacing wires Yes No Artificial limb or joint Yes... No Implanted drug infusion device Yes No Body ... Source: Knutson, Brian - Departments of Psychology &...

253

E-Print Network 3.0 - ahmed valve implantation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

delivery applications Summary: power, on demand valve. Previously, an implantable infusion pump system was inves- tigated... improved in order to power a series thermistor and...

254

Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering  

E-Print Network [OSTI]

of erbium implanted tungsten oxide films deposited byDual magnetron sputtering; tungsten oxide films; Er ionoptical waveguides [3,5]. Tungsten oxide (WO 3 ) thin films

Mohamed, Sodky H.; Anders, Andre

2006-01-01T23:59:59.000Z

255

Science and technology of biocompatible thin films for implantable biomedical devices.  

SciTech Connect (OSTI)

This presentation focuses on reviewing research to develop two critical biocompatible film technologies to enable implantable biomedical devices, namely: (1) development of bioinert/biocompatible coatings for encapsulation of Si chips implantable in the human body (e.g., retinal prosthesis implantable in the human eye) - the coating involves a novel ultrananocrystalline diamond (UNCD) film or hybrid biocompatible oxide/UNCD layered films; and (2) development of biocompatible films with high-dielectric constant and microfabrication process to produce energy storage super-capacitors embedded in the microchip to achieve full miniaturization for implantation into the human body.

Li, W.; Kabius, B.; Auciello, O.; Materials Science Division

2010-01-01T23:59:59.000Z

256

Productivity Improvement for the SHX--SEN's Single-Wafer High-Current Ion Implanter  

SciTech Connect (OSTI)

Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both electrical power and process gases. For high-current ion implanters, reduction of implant area is a key factor to increase efficiency. SEN has developed the SAVING system (Scanning Area Variation Implantation with Narrower Geometrical pattern) to address this opportunity. In this paper, three variations of the SAVING system are introduced along with discussion of their effects on fab productivity.

Ninomiya, Shiro; Ochi, Akihiro; Kimura, Yasuhiko; Yumiyama, Toshio; Kudo, Tetsuya; Kurose, Takeshi; Kariya, Hiroyuki; Tsukihara, Mitsukuni; Ishikawa, Koji; Ueno, Kazuyoshi [SEN Corporation, 1501, Imazaike, Saijo, Ehime, 799-1362 (Japan)

2011-01-07T23:59:59.000Z

257

Controlled release of gentamicin from polyelectrolyte multilayers to treat implant-related infection  

E-Print Network [OSTI]

Polyelectrolyte multilayered (PEM) coatings were fabricated to incorporate and release the small, hydrophilic antibiotic gentamicin from implant surfaces for infection control. The use of a cationic hydrolytically cleavable ...

Moskowitz, Joshua Seth

2012-01-01T23:59:59.000Z

258

Processing of Silver-Implanted Aluminum Nitride for Energy Harvesting Devices  

E-Print Network [OSTI]

conductive layer in a ceramic matrix via ion implantation.Ag precipitation in a ceramic matrix; and evaluate theform metal particles in a ceramic matrix at a concentration

Alleyne, Fatima

2013-01-01T23:59:59.000Z

259

Ion Sources for High Energy Ion Implantation at BNL | U.S. DOE...  

Office of Science (SC) Website

Ion Sources for High Energy Ion Implantation at BNL Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science...

260

Superconductivity in Metal-mixed Ion-Implanted Polymer Films  

E-Print Network [OSTI]

Ion-implantation of normally insulating polymers offers an alternative to depositing conjugated organics onto plastic films to make electronic circuits. We used a 50 keV nitrogen ion beam to mix a thin 10 nm Sn/Sb alloy film into the sub-surface of polyetheretherketone (PEEK) and report the low temperature properties of this material. We observed metallic behavior, and the onset of superconductivity below 3 K. There are strong indications that the superconductivity does not result from a residual thin-film of alloy, but instead from a network of alloy grains coupled via a weakly conducting, ion-beam carbonized polymer matrix.

A. P. Micolich; E. Tavenner; B. J. Powell; A. R. Hamilton; M. T. Curry; R. E. Giedd; P. Meredith

2006-03-15T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Hypersonic aerospace vehicle leading-edge cooling using heat-pipe, transpiration and film-cooling techniques  

SciTech Connect (OSTI)

The feasibility of cooling hypersonic-vehicle leading-edge structures exposed to severe aerodynamic surface heat fluxes was studied, using a combination of liquid-metal heat pipes and surface-mass-transfer cooling techniques. A generalized, transient, finite-difference-based hypersonic leading-edge cooling model was developed that incorporated these effects and was demonstrated on an assumed aerospace plane-type wing leading edge section and a SCRAMJET engine inlet leading-edge section. The hypersonic leading-edge cooling model was developed using an existing, experimentally verified heat-pipe model. Then the existing heat-pipe model was modified by adding both transpiration and film-cooling options as new surface boundary conditions. The models used to predict the leading-edge surface heat-transfer reduction effects of the transpiration and film cooling were modifications of more-generalized, empirically based models obtained from the literature. It is concluded that cooling leading-edge structures exposed to severe hypersonic-flight environments using a combination of liquid-metal heat pipe, surface transpiration, and film cooling methods appears feasible.

Modlin, J.M.

1991-01-01T23:59:59.000Z

262

Thermal Energy Harvesting with Thermoelectrics for Self-powered Sensors: With Applications to Implantable Medical Devices, Body Sensor Networks and Aging in Place  

E-Print Network [OSTI]

to lose favor to lithium batteries which had calculatedof lithium and lithium-ion batteries in implantable medicalof lithium and lithium-ion batteries in implantable medical

Chen, Alic

2011-01-01T23:59:59.000Z

263

Annealing kinetics of ^311 defects and dislocation loops in the end-of-range damage region of ion implanted silicon  

E-Print Network [OSTI]

, University of Florida, Gainesville, Florida 32611 L. M. Rubin and J. Jackson Eaton Corporation, Beverly was implanted using an Eaton NV-GSD 200E. The wafer was amorphized using a Si implantation, with an energy of 20

Florida, University of

264

Towards a better speech processor for cochlear implants : auditory- nerve responses to high-rate electric pulse trains  

E-Print Network [OSTI]

Cochlear implants are prosthetic devices that seek to restore hearing in profoundly deaf patients by electrically stimulating the auditory-nerve (AN). With current implants, the representation of the sound waveform in ...

Litvak, Leonid, 1973-

2002-01-01T23:59:59.000Z

265

Adaptive Threshold Spike Detection using Stationary Wavelet Transform for Neural Recording Implants  

E-Print Network [OSTI]

to optimize power consumption. The system was designed in 130nm CMOS and shown to occupy 0.082 mm2. Such a system must operate with very low power and occupy minimal area in order to facilitate implantationAdaptive Threshold Spike Detection using Stationary Wavelet Transform for Neural Recording Implants

Mason, Andrew

266

Corrosion Behavior of Solution-Annealed CoCrMo Medical Implant  

E-Print Network [OSTI]

! ! ! Corrosion Behavior of Solution- Annealed CoCrMo Medical Implant Alloys Pooja Panigrahi University June 6, 2011 #12;! ! ""! Corrosion Behavior of Solution-Annealed CoCrMo Medical Implant Alloys and Applied Sciences Northwestern University June 6, 2011 Abstract Corrosion behavior of solution annealed

Shull, Kenneth R.

267

Surface blistering and flaking of sintered uranium dioxide samples under high dose gas implantation and annealing  

E-Print Network [OSTI]

Surface blistering and flaking of sintered uranium dioxide samples under high dose gas implantation-sur-Yvette, France. a guillaume.martin@cea.fr Keywords: uranium dioxide, helium, hydrogen, implantation, blistering, flaking Abstract. High helium contents will be generated within minor actinide doped uranium dioxide

Boyer, Edmond

268

The electrical and optical properties of thin lm diamond implanted with silicon  

E-Print Network [OSTI]

:Si alloys were formed by the implantation of Si into polycrystalline diamond lms grown by che- mical vaporThe electrical and optical properties of thin lm diamond implanted with silicon K.J. Roea,* , J of diamond make it an attractive material for use in extreme conditions. Diamond devices have been fabricated

Kolodzey, James

269

THE ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILM DIAMOND IMPLANTED WITH SILICON  

E-Print Network [OSTI]

devices. The C:Si alloys were formed by the implantation of Si into polycrystalline diamond films grownTHE ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILM DIAMOND IMPLANTED WITH SILICON K. J. Roe and J and electrical properties of diamond make it an attractive material for use in extreme conditions. Diamond

Kolodzey, James

270

Technique to Control pH in Vicinity of Biodegrading PLA-PGA Implants  

E-Print Network [OSTI]

Technique to Control pH in Vicinity of Biodegrading PLA-PGA Implants C. Mauli Agrawal, Kyriacos A polylactic acid (PLA) and polyglycolic acid (PGA) polymers can be offset by incorporation of basic salts within PLA-PGA implants. It has been suggested that such pH lowering results in adverse effects, which

Athanasiou, Kyriacos

271

Aluminum plasma immersion ion implantation in polymers M. Ueda a,*, I.H. Tan a  

E-Print Network [OSTI]

Aluminum plasma immersion ion implantation in polymers M. Ueda a,*, I.H. Tan a , R.S. Dallaqua on the implantation of Kapton, Mylar, polypropylene and polyethylene samples with aluminum ions at 2.5, 5 and 7 k doses of (1­3) ? 1016 cm?2 , with most of the aluminum concentrated on the surface. This is probably due

272

CBC Reduction in InP Heterojunction Bipolar Transistor with Selectively Implanted Collector Pedestal  

E-Print Network [OSTI]

CBC Reduction in InP Heterojunction Bipolar Transistor with Selectively Implanted Collector-3812 Fax: (805) 893-8714 Email: yingda@ece.ucsb.edu The base-collector junction capacitance (Cbc) is a key with a collector pedestal under the HBT's intrinsic region by using selective ion implantation and MBE regrowth

Rodwell, Mark J. W.

273

The Structure of the Tungsten Coatings Deposited by Combined Magnetron Sputtering and Ion Implantation for Nuclear Fusion Applications  

E-Print Network [OSTI]

The Structure of the Tungsten Coatings Deposited by Combined Magnetron Sputtering and Ion Implantation for Nuclear Fusion Applications

274

Central Vein Dilatation Prior to Concomitant Port Implantation  

SciTech Connect (OSTI)

Implantation of subcutaneous port systems is routinely performed in patients requiring repeated long-term infusion therapy. Ultrasound- and fluoroscopy-guided implantation under local anesthesia is broadly established in interventional radiology and has decreased the rate of complications compared to the surgical approach. In addition, interventional radiology offers the unique possibility of simultaneous management of venous occlusion. We present a technique for recanalization of central venous occlusion and angioplasty combined with port placement in a single intervention which we performed in two patients. Surgical port placement was impossible owing to occlusion of the superior vena cava following placement of a cardiac pacemaker and occlusion of multiple central veins due to paraneoplastic coagulopathy, respectively. In both cases the affected vessel segments were dilated with balloon catheters and the port systems were placed thereafter. After successful dilatation, the venous access was secured with a 25-cm-long, 8-Fr introducer sheath, a subcutaneous pocket prepared, and the port catheter tunneled to the venipuncture site. The port catheter was introduced through the sheath with the proximal end connected to a 5-Fr catheter. This catheter was pulled through the tunnel in order to preserve the tunnel and, at the same time, allow safe removal of the long sheath over the wire. The port system functioned well in both cases. The combination of recanalization and port placement in a single intervention is a straightforward alternative for patients with central venous occlusion that can only be offered by interventional radiology.

Krombach, Gabriele A., E-mail: krombach@rad.rwth-aachen.de; Plumhans, Cedric; Goerg, Fabian; Guenther, Rolf W. [University of Technology (RWTH) Aachen, Department of Diagnostic Radiology, University Hospital (Germany)

2010-04-15T23:59:59.000Z

275

Cavity nucleation and evolution in He-implanted Si and GaAs  

SciTech Connect (OSTI)

The criteria for forming stable cavities by He{sup +} implantation and annealing are examined for Si and GaAs. In Si, implanting at room temperature requires a minimum of 1.6 at. % He to form a continuous layer of cavities after annealing at 700{degrees}C. The cavities are located at dislocations and planar defects. Implanting peak He concentrations just above this threshold produces narrow layers of cavities at the projected range. In GaAs, room-temperature implantation followed by annealing results in exfoliation of the surface layer. Cavities were formed instead by implanting Ar followed by overlapping He, both at 400{degrees}C, with additional annealing at 400{degrees}C to outgas the He. This method forms 1.5--3.5 nm cavities that are often on [111] planar defects.

Follstaedt, D.M.; Myers, S.M.; Petersen, G.A.; Barbour, J.C.

1995-12-01T23:59:59.000Z

276

PREPARATION AND IMPLANTATION ALZET OSMOTIC PUMPS (SOP-9) Osmotic pumps manufactured by ALZA Corporation (Palo Alto, CA) are  

E-Print Network [OSTI]

PREPARATION AND IMPLANTATION ALZET OSMOTIC PUMPS (SOP-9) Osmotic pumps manufactured by ALZA or weeks. Pumps are implanted SC or IP for systemic delivery. Drugs can be delivered to the central nervous system (ICV or intraparenchymally), by attaching the delivery port of the pump (implanted SC

Kleinfeld, David

277

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon  

SciTech Connect (OSTI)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}

Venezia, V.C. [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States); Haynes, T.E. [Solid State Division, Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)] [Solid State Division, Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States); Agarwal, A. [Semiconductor Equipment Operations, Eaton Corporation, 55 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States)] [Semiconductor Equipment Operations, Eaton Corporation, 55 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States); Pelaz, L.; Gossmann, H.; Jacobson, D.C.; Eaglesham, D.J. [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)

1999-03-01T23:59:59.000Z

278

Copper gettering by aluminum precipitates in aluminum-implanted silicon  

SciTech Connect (OSTI)

Copper in Si is shown to be strongly gettered by Al-rich precipitates formed by implanting Al to supersaturation and followed by annealing. At temperatures ranging from 600 to 800 C a layer containing Al precipitates is found to getter Cu from Cu silicide located on the opposite side of a 0.25-mm Si wafer, indicating a substantially lower chemical potential for the Cu in the molten-A1 phase. Cu gettering proceeds rapidly until an atomic ratio of approximately 2 Cu atoms to 1 Al atom is reached in the precipitated Al region, after which the gettering process slows. Redistribution of Cu from one Al-rich layer to another at low Cu concentrations demonstrates that a segregation-type gettering mechanism is operating. Cu gettering occurs primarily in the region containing the precipitated Al rather than the region where the Al is entirely substitutional.

PETERSEN,GARY A.; MYERS JR.,SAMUEL M.

2000-03-20T23:59:59.000Z

279

Characterization of few-layered graphene grown by carbon implantation  

SciTech Connect (OSTI)

Graphene is considered to be a very promising material for applications in nanotechnology. The properties of graphene are strongly dependent on defects that occur during growth and processing. These defects can be either detrimental or beneficial to device performance depending on defect type, location and device application. Here we present experimental results on formation of few-layered graphene by carbon ion implantation into nickel films and characteristics of graphene devices formed by graphene transfer and lithographic patterning. Micro-Raman spectroscopy was used to determine the number of graphene layers formed and identify defects arising from the device processing. The graphene films were cleaned by annealing in vacuum. Transport properties of cleaned graphene films were investigated by fabrication of back-gated field-effect transistors, which exhibited high hole and electron mobility of 1935 and 1905 cm2/Vs, respectively.

Lee, Kin Kiong; McCallum, Jeffrey C.; Jamieson, David N. [Centre for Quantum Computation and Communication Technology, School of Physics, The University of Melbourne, Parkville, Victoria 3010 (Australia)

2014-02-21T23:59:59.000Z

280

Mechanics of Insulator Behavior in Concrete Crosstie Fastening Systems  

E-Print Network [OSTI]

of Insulator Behavior Analysis of failure modes and causes · Failure Mode and Effect Analysis (FMEA) used

Barkan, Christopher P.L.

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Headmark List of Suspect Counterfeit Fasteners 1992 | Department of Energy  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of Energy Power.pdf11-161-LNG | Department ofHTS Cable Projects HTS CableMayEfficient Change |Department

282

Finite Element Modeling of the Fastening Systems and the Concrete  

E-Print Network [OSTI]

Sleeper and Ballast 0 500 1000 1500 2000 2500 3000 3500 4000 0.0000 0.0002 0.0004 0.0006 0.0008 0 of strands Rail seat area is between 0.39 m to 0.67 m Rail Seat Area Component Modeling: Concrete Sleeper Seat Area Position of concrete surface strain lt = 0.48 m Component Modeling: Concrete Sleeper

Barkan, Christopher P.L.

283

Development of Steel Fastener Nano-Ceramic Coatings for Corrosion  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeat Pump Models |Conduct, Parent CompanyaUSAMP AMDHeavy Duty Trucks |2 DOEProtection

284

Percutaneous Vertebroplasty in a Broken Vertebral Titanium Implant (Titanium Mesh Cage)  

SciTech Connect (OSTI)

We report the case of a percutaneous consolidation of a broken vertebral implant (Surgical Titanium Mesh Implants; DePuy Spine, Raynham, MA, USA) by vertebroplasty. Four years after anterior spondylectomy with cage implantation and stabilization with posterior instrumentation, the patient was admitted for excruciating back pain. Radiographs showed fracture of the cage, screw, and rod. An anterior surgical approach was deemed difficult and a percutaneous injection of polymethyl methacrylate into the cage was performed following posterior instrumentation replacement. This seems to be an interesting alternative to the classical anterior surgical approach, which is often difficult in postoperative conditions.

Bierry, G.; Buy, X.; Mohan, P. Chandra; Cupelli, J. [University Hospital of Strasbourg, Department of Radiology B (France); Steib, J.P. [University Hospital of Strasbourg, Department of Orthopedic and Spinal Surgery (France); Gangi, A. [University Hospital of Strasbourg, Department of Radiology B (France)], E-mail: gangi@rad6.u-strasbg.fr

2006-08-15T23:59:59.000Z

285

Effects of sequential tungsten and helium ion implantation on nano-indentation hardness of tungsten  

SciTech Connect (OSTI)

To simulate neutron and helium damage in a fusion reactor first wall sequential self-ion implantation up to 13 dpa followed by helium-ion implantation up to 3000 appm was performed to produce damaged layers of {approx}2 {mu}m depth in pure tungsten. The hardness of these layers was measured using nanoindentation and was studied using transmission electron microscopy. Substantial hardness increases were seen in helium implanted regions, with smaller hardness increases in regions which had already been self-ion implanted, thus, containing pre-existing dislocation loops. This suggests that, for the same helium content, helium trapped in distributed vacancies gives stronger hardening than helium trapped in vacancies condensed into dislocation loops.

Armstrong, D. E. J.; Edmondson, P. D.; Roberts, S. G. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)] [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

2013-06-24T23:59:59.000Z

286

Microfluidic Integration into Neural Implants University of Southern California, Los Angeles, CA  

E-Print Network [OSTI]

Microfluidic Integration into Neural Implants E. Meng1 1 University of Southern California, Los technological deficiencies can be addressed by integrating microfluidics with electrodes and electrochemical sensors. Multimodality neural interfaces that combine electronics and microfluidics open new possibilities

Meng, Ellis

287

E-Print Network 3.0 - arsenic implanted silicon Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics 16 Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET Summary: in Low Energy Arsenic Implanted Silicon", Proc. Ion...

288

Energy management techniques for ultra-small bio-medical implants  

E-Print Network [OSTI]

Trends in the medical industry have created a growing demand for implantable medical devices. In particular, the need to provide medical professionals a means to continuously monitor bio-markers over long time scales with ...

Sanchez, William R

2012-01-01T23:59:59.000Z

289

Mineral status, bone characterisitics, carcass characteristics, and performance of feedlot lambs implanted with zeranol  

E-Print Network [OSTI]

d intervals post implanting, pens were thoroughly cleaned and excreta allowed to accumulate for 2 d. Excreta was collected and analyzed for P and N content. Lambs were slaughtered on d 67 and carcass characteristics were determined. Phosphorus...

Niemann, Dawn Renee

1998-01-01T23:59:59.000Z

290

Emergency delivery of Vasopressin from an implantable MEMS rapid drug delivery device  

E-Print Network [OSTI]

An implantable rapid drug delivery device based on micro-electro-mechanical systems (MEMS) technology was designed, fabricated and validated for the in vivo rapid delivery of vasopressin in a rabbit model. In vitro ...

Ho Duc, Hong Linh, 1978-

2009-01-01T23:59:59.000Z

291

Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes  

E-Print Network [OSTI]

The effect of 170 keV Si and 100 keV C ion bombardment on the structure and properties of highly pure, double-wall carbon nanotubes has been investigated using resonance Raman spectroscopy. The implantations were performed ...

Dresselhaus, Mildred

292

Damage evolution in Au-implanted Ho2Ti2O7 titanate pyrochlore...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Zhang Y, J Jagielski, IT Bae, X Xiang, L Thome, G Balakrishnan, DM Paul, and WJ Weber.2010."Damage evolution in Au-implanted Ho2Ti2O7 titanate pyrochlore."Nuclear...

293

The Effect of Electrode Placement on Cochlear Implant Function and Outcomes  

E-Print Network [OSTI]

Cochlear implants have been an effective treatment for restoring profound sensorineural hearing loss to those who do not benefit from traditional hearing aids. Advances in surgical technique and electrode design allow for preservation of residual...

Prentiss, Sandra

2013-12-31T23:59:59.000Z

294

An energy management IC for bio-implants using ultracapacitors for energy storage  

E-Print Network [OSTI]

We present the first known energy management IC to allow low-power systems, such as biomedical implants, to optimally use ultracapacitors instead of batteries as their chief energy storage elements. The IC, fabricated in ...

Sanchez, William R.

295

E-Print Network 3.0 - aiiibv semiconductors implanted Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Materials Science ; Engineering 83 0 0.2 0.4 0.6 -0.2 0 0.2 0.4 Summary: by terahertz radiation sources. Method: Use ion-implantation to damage semiconductor,...

296

E-Print Network 3.0 - aluminium ions implanted Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Probe 111 InCd as molecular 111 InO- Ions for Materials Studies... University, ACT 0200, Australia A low energy (50-150 keV) negative ion implanter at the University of...

297

E-Print Network 3.0 - arc ion implantation Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

des paramittres d'implantation (18-39 kev, 10'-10'ionscm2) et de re- cuit (950-1100pour 10... -duration incoherent xenon light exposure has been used to re- move the ion...

298

Mechanical characterization and in vivo operation of an implantable drug delivery MEMS device  

E-Print Network [OSTI]

The goal of this thesis was to advance an implantable drug delivery MEMS (MicroElectroMechanical Systems) device developed in our laboratory. This device was designed to locally deliver multiple substances in complex release ...

Li, Yawen, 1972-

2005-01-01T23:59:59.000Z

299

Proteomic comparison of biomaterial implants for regeneration of peripheral nerve tissue  

E-Print Network [OSTI]

Tissue regenerates resulting from the healing of transected peripheral nerve differ in morphological and electrophysiological properties based on the biomaterial implant used to bridge the interneural wound gap. At gap ...

Miu, Kathy K

2009-01-01T23:59:59.000Z

300

Coralline hydroxyapatite implants for use in the treatment of surgically created subchondral defects in the horse  

E-Print Network [OSTI]

. Implant areas of interest. Figure 2. Implant regions of interest. were grouped with bone tissue. Using point counting and lineal analysis methods the volume fraction (%), specific surface area (mm /mm ) and specific interface area (mm /mm ) of each... tissue were then computed. The interface area is the measure of the boundary of one tissue with that of a complimentary tissue, or tissues. To remove the effect of linear anisotropy, lineal analysis was computed along two perpendicular axes...

Gillis, John Patrick

1988-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry  

SciTech Connect (OSTI)

Industrial aspects of the evolution of ion implantation technology will be reviewed, and their impact on the semiconductor industry will be discussed. The main topics will be the technology's application to the most advanced, ultra scaled CMOS, and to power devices, as well as productivity improvements in implantation technology. Technological insights into future developments in ion-related technologies for emerging industries will also be presented.

Tsukamoto, Katsuhiro [Mitsubishi Electric Corporation (Japan); Kuroi, Takashi; Kawasaki, Yoji [Renesas Electronics Corporation (Japan)

2011-01-07T23:59:59.000Z

302

Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources  

E-Print Network [OSTI]

Pr,10,11 Eu,12 Dy,13 Er,13­15 and Tm16 doped GaN. Rare earth elements were added during growthRare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources L. C. Chao, B write implantation. © 1999 American Vacuum Society. S0734-211X 99 08306-7 I. INTRODUCTION Rare earth

Steckl, Andrew J.

303

Department of Mechanical & Aerospace  

E-Print Network [OSTI]

such as a simulation of a Mach 5 flight of a scramjet operating with ramp fuel injection of hydrogen. The Rotating

Acton, Scott

304

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

consist of discrete tungsten-oxide nanoparticles distributed uniformly throughout the bulk of an optically, tungsten- oxide, polymer matrix nanocomposites. Under specific processing conditions, these composites transparent fluoropolymer matrix. Incorporating oxygen as a supplementary deposition agent in the synthesis

Reisslein, Martin

305

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

UNDER OTHER PROGRAMS SITE NAME Shippingport Site Vanadium Corp. of America Bonus Power Station CEEK CEER (Center for Energy &- Environmental Research) Savannah River Swamp...

306

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

Site Vanadium Corp. of Americh Shippingport, PA. SFPIP Bridgeville, PA UFiTKAP Bonus Power Station Puerto Rico Decommissioned CEEK Rio Piearas, PR Note 1 CEER (Center for...

307

Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

, terahertz photonics, and plasmon-enhanced optoelectronic devices. He received a B.S. and M.S. degree

308

THE AEROSPACE CORPORATION '  

Office of Legacy Management (LM)

AZ o TVA, Muscle Shoals, AL o Dow Chemical Company, Walnut Creek, CA e Colorado School of Mines, Golden, CO o Havens Lab, Bridgeport Brass, Bridgeport, CT o General Chemical...

309

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

generation highly complex drivetrain systems (such as HEV, PHEV, FCHEV, ..etc) where the interaction variances due to an inclusion of highly cross linked on-board automatic controls. The development of next

310

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

as a member of expert panels reviewing the health impacts of wind turbines. seminar Predicting Turbofan Fan down, the fan stage becomes the main engine noise source. The noise exists mainly due to the interaction of the fan rotor wake with the fan exit guide vanes (FEGVs). Both tonal and broadband noise

311

Jinkyu Yang Graduate Aerospace  

E-Print Network [OSTI]

-Specific Quantification of Bone Quality Using Highly Nonlinear Solitary Waves Osteoporosis is a well recognized problem of Health Osteoporosis and Related Bone Diseases National Resource Center, more than 40 million Americans are at risk of fracture due to osteoporosis or low bone density. Osteoporosis can influence surgical decision

Daraio, Chiara

312

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

, battery storage, a microgrid, several large thermal storage devices and residential HVAC. It is shown that of heterogeneous materials, using both experimental techniques (nuclear magnetic resonance, particle image of energy systems, beginning with a project to refurbish and modernize the solar-assisted HVAC in the UNM

313

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

, CFD, and engineering to provide design support and R&D for major capital projects such as offshore field development, detailed design of production facilities, and LNG plant engineering. seminar

314

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

, electrical, and computing sciences that allows the development of machines that are able to act to recent advances in the science of robotics, and thus the machines perform primarily as mechanical devices for manual (human) labor. However, many machines currently in use in manufacturing were developed prior

315

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

a flammable mixture. To this end, a fundamental understanding of the ignition phenomenon is necessary in order to develop more accurate test methods and standards as a means of designing safer air vehicles. The focus the NSF Career Award in 2011 and the DOE Early Career Award in 2011. His research is funded by DOE, NSF

316

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

the waste heat, presenting efficiency loss. We discuss in-situ (at/adjacent to the emission site) recycling of optical phonons to improve thermal management (lowering operating temperature and/or reducing net heat, since 1986. His interest is in heat transfer education and research. He has authored Heat Transfer

317

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

for the study of phonon transport and thermal conductivity in nanostructured materials. In the second part conductivity. Coupled with its low thermal conductivity, polymer thermoelectric composites are attractive the measurement and understanding on the low thermal conductivity of an N-type flexible hybrid TiS2-organic

Reisslein, Martin

318

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

to regulate appropriate process variables at desired values. While this paradigm to process control has been to compute optimal manipulated input trajectories and cooperate in an efficient fashion to achieve desired in 1992, from the University of Patras, Greece, the M.S. degrees in Electrical Engineering and Mathematics

319

Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

manufacturing and utility industries. He is also a board member of the California Solar Collaborative and other Integration Specialist in the Smart Grid Technologies and Strategy Division of the California Independent System Operator (California ISO). He has been with the grid operator of the world's 8th largest economy

320

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C.Green River, Utah,Tuba City,'1Dearof l D +;$kHf3

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C.Green River, Utah,Tuba City,'1Dearof l D

322

THE AEROSPACE CORPORATION ,'  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C.Green River, Utah,Tuba City,'1Dearof l D,' 20030

323

THE AEROSPACE CORPORATION 1  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C.Green River, Utah,Tuba City,'1Dearof l D,'

324

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5- 02/ 'W Suite

325

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5- 02/ 'W

326

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5- 02/ 'W. . s

327

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5- 02/ 'W. .

328

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5- 02/ 'W.

329

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5- 02/ 'W.,' \

330

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5- 02/ 'W.,'

331

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5- 02/

332

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-

333

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-1 . ' . THE

334

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-1 . ' . THELie

335

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-1 . ' .

336

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-1 . ' .53 L'

337

THE AEROSPACE CORPORATION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-1 . ' .53

338

THE AEROSPACE CORPORATION '  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-1 . ' .53q 3

339

THE AEROSPACE CORPORATION /  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-1 . ' .53q 3/

340

THE AEROSPACE CORPORATION \  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28SacandagaSiteCT-. \5-1 . ' .53q'Al

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

of thermal and hydro-dynamic features during phase change (boiling, condensation) causes spatio-temporal fluctuations of surface temperature at the micro/nano-scales, which are termed as "cold-spots" and can transmit nanoparticles behaved as nanofins (enhanced surface area) that dominate heat transfer for micro/nanoscale flows

342

Mechanical & Aerospace Engineering  

E-Print Network [OSTI]

of internal combustion engine technology. (cont'd.) (bio cont'd.) At Cummins he was directly involved in diesel engine technology - that achieve near-zero exhaust emissions, will be presented. The talk with almost every new engine and exhaust emission program from 1993 to the present day. These programs

343

Ion implantation of silicon at the nanometer scale  

SciTech Connect (OSTI)

SiO{sub 2} layers ({approx}0.5 {mu}m thick) thermally grown on (100) Si were irradiated with 12.5 MeV Ti ions at 10{sup 9} cm{sup -2} fluence, and subsequently exposed to the HF vapor, in order to selectively etch the latent tracks generated by the passage of swift ions. Nearly cylindrical nanoholes having diameters as small as 25 nm, with an average value of 54{+-}5 nm, were generated by this procedure. The nanopatterned SiO{sub 2} layer served as a mask for selective amorphization of the underlying Si, achieved by implantation with 180 keV Ar{sup +} ions at a fluence of 2.0x10{sup 15} cm{sup -2}. Dip in aqueous HF solution was then performed to selectively etch ion amorphized Si, thus transferring the nanometric pattern of the SiO{sub 2} mask to the underlying substrate. As expected, the maximum depth of amorphizazion in Si, and consequently of etching depth, decreases when the hole radius decreases below values of the order of the lateral ion straggling. The effect has been characterized and investigated by the comparison of experiments and three dimensional Monte Carlo simulations.

Bianconi, Marco; Bergamini, Fabio; Cristiani, Stefano; Lulli, Giorgio [CNR-IMM-Sezione di Bologna, Via P. Gobetti 101, I-40129 Bologna (Italy) and Laboratory MIST E-R, Via P. Gobetti 101, I-40129 Bologna (Italy); CNR-IMM-Sezione di Bologna, Via P. Gobetti 101, I-40129 Bologna (Italy)

2007-10-01T23:59:59.000Z

344

Bilateral implant reconstruction does not affect the quality of postmastectomy radiation therapy  

SciTech Connect (OSTI)

To determine if the presence of bilateral implants, in addition to other anatomic and treatment-related variables, affects coverage of the target volume and dose to the heart and lung in patients receiving postmastectomy radiation therapy (PMRT). A total of 197 consecutive women with breast cancer underwent mastectomy and immediate tissue expander (TE) placement, with or without exchange for a permanent implant (PI) before radiation therapy at our center. PMRT was delivered with 2 tangential beams + supraclavicular lymph node field (50 Gy). Patients were grouped by implant number: 51% unilateral (100) and 49% bilateral (97). The planning target volume (PTV) (defined as implant + chest wall + nodes), heart, and ipsilateral lung were contoured and the following parameters were abstracted from dose-volume histogram (DVH) data: PTV D{sub 95%} > 98%, Lung V{sub 20}Gy > 30%, and Heart V{sub 25}Gy > 5%. Univariate (UVA) and multivariate analyses (MVA) were performed to determine the association of variables with these parameters. The 2 groups were well balanced for implant type and volume, internal mammary node (IMN) treatment, and laterality. In the entire cohort, 90% had PTV D{sub 95%} > 98%, indicating excellent coverage of the chest wall. Of the patients, 27% had high lung doses (V{sub 20}Gy > 30%) and 16% had high heart doses (V{sub 25}Gy > 5%). No significant factors were associated with suboptimal PTV coverage. On MVA, IMN treatment was found to be highly associated with high lung and heart doses (both p < 0.0001), but implant number was not (p = 0.54). In patients with bilateral implants, IMN treatment was the only predictor of dose to the contralateral implant (p = 0.001). In conclusion, bilateral implants do not compromise coverage of the target volume or increase lung and heart dose in patients receiving PMRT. The most important predictor of high lung and heart doses in patients with implant-based reconstruction, whether unilateral or bilateral, is treatment of the IMNs. Refinement of radiation techniques in reconstructed patients who require comprehensive nodal irradiation is warranted.

Ho, Alice Y., E-mail: hoa1234@mskcc.org [Department of Radiation Oncology, Memorial Sloan-Kettering Cancer Center, New York, NY (United States); Patel, Nisha [Drexel University College of Medicine, Philadelphia, PA (United States); Ohri, Nisha [Department of Radiation Oncology, Mount Sinai School of Medicine, New York, NY (United States); Morrow, Monica [Department of Surgery, Memorial Sloan-Kettering Cancer Center, New York, New York (United States); Mehrara, Babak J.; Disa, Joseph J.; Cordeiro, Peter G. [Department of Plastic Surgery, Memorial Sloan-Kettering Cancer Center, New York, NY (United States); Shi, Weiji; Zhang, Zhigang [Department of Biostatistics and Epidemiology, Memorial Sloan-Kettering Cancer Center, New York, NY (United States); Gelblum, Daphna [Department of Radiation Oncology, Memorial Sloan-Kettering Cancer Center, New York, NY (United States); Nerbun, Claire T.; Woch, Katherine M.; Ballangrud, Ase [Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, NY (United States); McCormick, Beryl; Powell, Simon N. [Department of Radiation Oncology, Memorial Sloan-Kettering Cancer Center, New York, NY (United States)

2014-04-01T23:59:59.000Z

345

Effect of implanted species on thermal evolution of ion-induced defects in ZnO  

SciTech Connect (OSTI)

Implanted atoms can affect the evolution of ion-induced defects in radiation hard materials exhibiting a high dynamic annealing and these processes are poorly understood. Here, we study the thermal evolution of structural defects in wurtzite ZnO samples implanted at room temperature with a wide range of ion species (from {sup 11}B to {sup 209}Bi) to ion doses up to 2??10{sup 16}?cm{sup ?2}. The structural disorder was characterized by a combination of Rutherford backscattering spectrometry, nuclear reaction analysis, and transmission electron microscopy, while secondary ion mass spectrometry was used to monitor the behavior of both the implanted elements and residual impurities, such as Li. The results show that the damage formation and its thermal evolution strongly depend on the ion species. In particular, for F implanted samples, a strong out-diffusion of the implanted ions results in an efficient crystal recovery already at 600?C, while co-implantation with B (via BF{sub 2}) ions suppresses both the F out-diffusion and the lattice recovery at such low temperatures. The damage produced by heavy ions (such as Cd, Au, and Bi) exhibits a two-stage annealing behavior where efficient removal of point defects and small defect clusters occurs at temperatures ?500?C, while the second stage is characterized by a gradual and partial annealing of extended defects. These defects can persist even after treatment at 900?C. In contrast, the defects produced by light and medium mass ions (O, B, and Zn) exhibit a more gradual annealing with increasing temperature without distinct stages. In addition, effects of the implanted species may lead to a nontrivial defect evolution during the annealing, with N, Ag, and Er as prime examples. In general, the obtained results are interpreted in terms of formation of different dopant-defect complexes and their thermal stability.

Azarov, A. Yu.; Rauwel, P.; Kuznetsov, A. Yu.; Svensson, B. G. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, PO Box 1048 Blindern, N-0316 Oslo (Norway); Halln, A. [Royal Institute of Technology, KTH-ICT, Electrum 229, SE-164 40, Kista, Stockholm (Sweden); Du, X. L. [Institute of Physics, The Chinese Academy of Sciences, Beijing 100190 (China)

2014-02-21T23:59:59.000Z

346

Investigation of (110)Mo, (110)W monocrystals and Nb polycrystal implanted by oxygen ions and used as TEC electrodes  

SciTech Connect (OSTI)

In an effort to improve efficiency of a thermionic energy converter (TEC), converting thermal power into electric power, there were investigated collectors made of (110)Mo and (110)W monocrystals, and Nb polycrystal, all being implanted by oxygen ions with fluence of 1*10{sup 18} cm{sup {minus}2}. For emitters there were used (110)Mo and (110)W monocrystals, and Nb polycrystal implanted by oxygen ions, respectively. The performance of TEC with implanted electrode material is compared with this of TEC having electrodes of non-implanted materials. It is demonstrated that for emitter temperature range of 1,473 to 1,873 K employment of (110)Mo and (110)W monocrystals, implanted by oxygen ions, for TEC collector allows to increase the specific output power of a converter approximately by a factor of 1.6, and employment of implanted Nb for electrodes -- to increase this value approximately by a factor of 3, as compared with non-implanted electrode materials. The upgraded performance of TEC with implanted electrode materials is caused by the increase of minimum values of the collector working function by {approximately}0.15--0.2 eV as compared with non-implanted collectors, as well as by improvement of emitter emissive and adsorption properties due to oxygen supply from collectors at operating temperatures.

Tsakadze, L.M.

1995-12-31T23:59:59.000Z

347

Physics based analytical modelling of Gallium Nitride(GaN) MESFET considering different ion implantation energy with high temperature annealing.  

E-Print Network [OSTI]

??A physics based analytical model of ion implanted GaN MESFET has been presented considering high temperature annealing effects. Choosing appropriate activation energy of impurity atoms, (more)

Raghavan, Vinay

2015-01-01T23:59:59.000Z

348

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering  

SciTech Connect (OSTI)

The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 Degree-Sign C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 Degree-Sign C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {l_brace}311{r_brace} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.

Oliviero, E. [CSNSM, CNRS-IN2P3-Universite Paris-Sud, Batiment 108, 91405 Orsay (France); David, M. L.; Beaufort, M. F.; Barbot, J. F. [Institut Pprime, CNRS-Universite de Poitiers-ENSMA, SP2MI, Bd Marie et Pierre Curie, BP30179, 86962 Futuroscope-Chasseneuil Cedex (France); Fichtner, P. F. P. [Departamento de Metalurgia, Universidade Federal do Rio Grande do Sul, Av Bento Goncalves 9500, Caixa Postal 15051, 90035-190 Porto Alegre, RS (Brazil)

2013-02-28T23:59:59.000Z

349

The effect of boron implant energy on transient enhanced diffusion in silicon  

SciTech Connect (OSTI)

Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when {l_angle}311{r_angle} defects are present. These results imply there are at least two sources of TED for boron implants (B-I): short time component that decays rapidly consistent with nonvisible B-I pairs and a longer time component consistent with interstitial release from the {l_angle}311{r_angle} defects. {copyright} {ital 1997 American Institute of Physics.}

Liu, J.; Krishnamoorthy, V. [Department of Materials Science and Engineering, University of Florida, Gainsville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainsville, Florida 32611 (United States); Gossman, H. [Lucent Technologies, Murray Hill, New Jersey 07974 (United States)] [Lucent Technologies, Murray Hill, New Jersey 07974 (United States); Rubin, L. [Eaton Corporation, Semiconductor Equipment Division, 108 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States)] [Eaton Corporation, Semiconductor Equipment Division, 108 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States); Law, M.E. [Department of Electrical Engineering, University of Florida, Gainsville, Florida 32611 (United States)] [Department of Electrical Engineering, University of Florida, Gainsville, Florida 32611 (United States); Jones, K.S. [Department of Materials Science and Engineering, University of Florida, Gainsville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainsville, Florida 32611 (United States)

1997-02-01T23:59:59.000Z

350

Physiological Stress Responses to Prolonged Exposure to MS-222 and Surgical Implantation in Juvenile Chinook Salmon  

SciTech Connect (OSTI)

While many studies have investigated the effects of transmitters on fish condition, behavior, and survival, to our knowledge, no studies have taken into account anesthetic exposure time in addition to tag and surgery effects. We investigated stress responses to prolonged MS-222 exposure after stage 4 induction in surgically implanted juvenile Chinook salmon (Oncorhynchus tshawytscha). Survival, tag loss, plasma cortisol concentration, and blood [Na+], [K+], [Ca2+], and pH were measured immediately following anesthetic exposure and surgical implantation and 1, 7, and 14 days post-treatment. Despite the prolonged anesthetic exposure, 3-15 minutes post Stage 4 induction, there were no mortalities or tag loss in any treatment. MS-222 was effective at delaying immediate cortisol release during surgical implantation; however, osmotic disturbances resulted, which were more pronounced in longer anesthetic time exposures. From day 1 to day 14, [Na+], [Ca2+], and pH significantly decreased, while cortisol significantly increased. The cortisol increase was exacerbated by surgical implantation. There was a significant interaction between MS-222 time exposure and observation day for [Na+], [Ca2+], [K+], and pH; variations were seen in the longer time exposures, although not consistently. In conclusion, stress response patterns suggest stress associated with surgical implantation is amplified with increased exposure to MS-222.

Wagner, Katie A.; Woodley, Christa M.; Seaburg, Adam; Skalski, John R.; Eppard, Matthew B.

2014-08-07T23:59:59.000Z

351

Peculiarities and application perspectives of metal-ion implants in glasses  

SciTech Connect (OSTI)

Ion implantation in insulators causes modifications in the refractive-index as a result of radiation damage, phase separation, or compound formation. As a consequence, light waveguides may be formed with interesting applications in the field of optoelectronics. Recently implantation of metals ions (e.g. silver, copper, gold, lead,...) showed the possibility of small radii colloidal particles formation, in a thin surface layer of the glass substrate. These particles exhibit an electron plasmon resonance which depends on the optical constants of the implanted metal and on the refractive-index of the glass host. The non-linear optical properties of such colloids, in particular the enhancement of optical Kerr susceptibility, suggest that the, ion implantation technique may play an important role for the production of all-optical switching devices. In this paper an analysis of the state-of-the-art of the research in this field will be presented in the framework of ion implantation in glass physics and chemistry.

Mazzoldi, P.; Gonella, F. [Padua Univ. (Italy). Dipt. di Fisica; Arnold, G.W. [Sandia National Labs., Albuquerque, NM (United States); Battaglin, G. [Venice Univ. (Italy). Dipt. di Chimica Fisica; Bertoncello, R. [Padua Univ. (Italy). Dipt. di Chimica Inorganica, Metallorganica e Analitica

1993-12-31T23:59:59.000Z

352

Charging and discharging in ion implanted dielectric films used for capacitive radio frequency microelectromechanical systems switch  

SciTech Connect (OSTI)

In this work, metal-insulator-semiconductor (MIS) capacitor structure was used to investigate the dielectric charging and discharging in the capacitive radio frequency microelectromechanical switches. The insulator in MIS structure is silicon nitride films (SiN), which were deposited by either low pressure chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor deposition (PECVD) processes. Phosphorus or boron ions were implanted into dielectric layer in order to introduce impurity energy levels into the band gap of SiN. The relaxation processes of the injected charges in SiN were changed due to the ion implantation, which led to the change in relaxation time of the trapped charges. In our experiments, the space charges were introduced by stressing the sample electrically with dc biasing. The effects of implantation process on charge accumulation and dissipation in the dielectric are studied by capacitance-voltage (C-V) measurement qualitatively and quantitatively. The experimental results show that the charging and discharging behavior of the ion implanted silicon nitride films deposited by LPCVD is quite different from the one deposited by PECVD. The charge accumulation in the dielectric film can be reduced by ion implantation with proper dielectric deposition method.

Li Gang; Chen Xuyuan [Pen-Tung Sah Micro-Electro-Mechanical Systems Research Center, Xiamen University, Xiamen, Fujian 361005 (China); Faculty of Science and Engineering, Vestfold University College, P.O. Box 2243, N-3103 Toensberg (Norway); San Haisheng [Pen-Tung Sah Micro-Electro-Mechanical Systems Research Center, Xiamen University, Xiamen, Fujian 361005 (China)

2009-06-15T23:59:59.000Z

353

Thermal annealing characteristics of Si and Mg-implanted GaN thin films  

SciTech Connect (OSTI)

In this letter, we report the results of ion implantation of GaN using {sup 28}Si and {sup 24}Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 10{sup 14} cm{sup {minus}2} Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690{degree}C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. {copyright} {ital 1996 American Institute of Physics.}

Chan, J.S.; Cheung, N.W. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)] [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Schloss, L.; Jones, E.; Wong, W.S.; Newman, N.; Liu, X.; Weber, E.R. [Department of Material Science and Mineral Engineering, University of California, Berkeley, California 64720 (United States)] [Department of Material Science and Mineral Engineering, University of California, Berkeley, California 64720 (United States); Gassman, A.; Rubin, M.D. [Lawrence Berkeley Laboratory, 1 Cyclotron Road, University of California, Berkeley, California 64720 (United States)] [Lawrence Berkeley Laboratory, 1 Cyclotron Road, University of California, Berkeley, California 64720 (United States)

1996-05-01T23:59:59.000Z

354

Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.  

SciTech Connect (OSTI)

We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

2010-08-01T23:59:59.000Z

355

HRTEM and XPS study of nanoparticle formation in Zn{sup +} ion implanted Si  

SciTech Connect (OSTI)

The results of investigations of nanoparticles (NPs) formation in a near surface layer of Si substrate after {sup 64}Zn{sup +} ion implantation and thermal annealing are presented. The implantation energy and dose were correspondently E=100keV and D?=?210{sup 16} cm{sup ?2}. Than the samples were subsequently isochronously subjected to furnace annealing during 1h in neutral atmosphere at 400C and in oxygen atmosphere at 600, 700 and 800C. The visualization of near surface layer was carried out by transmission electron microscopy with addition of electron diffraction. The energy dispersive spectroscopy was used for value of impurity concentration. The charge state of implanted zinc, silicon matrix atom and oxygen and were carried out by X-ray photoelectron spectroscopy and Auger electron spectroscopy.

Privezentsev, Vladimir V. [Institute of Physics and Technology of the RAS, Nakhimovskiy prosp.34, 117218 Moscow (Russian Federation); Tabachkova, Natalya Yu. [National University of Science and Technology ''MISiS'', Leninskiy prosp. 4, 119049 Moscow (Russian Federation); Lebedinskii, Yurii Yu. [National Research Nuclear University ''MIPhI'', Kashirskoe sh. 31, 115409 Moscow (Russian Federation)

2014-02-21T23:59:59.000Z

356

2.782J / 3.961J / 20.451J / HST.524J Design of Medical Devices and Implants, Spring 2003  

E-Print Network [OSTI]

Solution of clinical problems by use of implants and other medical devices. Systematic use of cell-matrix control volumes. The role of stress analysis in the design process. Anatomic fit: shape and size of implants. Selection ...

Yannas, Ioannis V.

357

Performance improvement of silicon nitride ball bearings by ion implantation. CRADA final report  

SciTech Connect (OSTI)

The present report summarizes technical results of CRADA No. ORNL 92-128 with the Pratt and Whitney Division of United Technologies Corporation. The stated purpose of the program was to assess the 3effect of ion implantation on the rolling contact performance of engineering silicon nitride bearings, to determine by post-test analyses of the bearings the reasons for improved or reduced performance and the mechanisms of failure, if applicable, and to relate the overall results to basic property changes including but not limited to swelling, hardness, modulus, micromechanical properties, and surface morphology. Forty-two control samples were tested to an intended runout period of 60 h. It was possible to supply only six balls for ion implantation, but an extended test period goal of 150 h was used. The balls were implanted with C-ions at 150 keV to a fluence of 1.1 {times} 10{sup 17}/cm{sup 2}. The collection of samples had pre-existing defects called C-cracks in the surfaces. As a result, seven of the control samples had severe spalls before reaching the goal of 60 h for an unacceptable failure rate of 0.003/sample-h. None of the ion-implanted samples experienced engineering failure in 150 h of testing. Analytical techniques have been used to characterize ion implantation results, to characterize wear tracks, and to characterize microstructure and impurity content. In possible relation to C-cracks. It is encouraging that ion implantation can mitigate the C-crack failure mode. However, the practical implications are compromised by the fact that bearings with C-cracks would, in no case, be acceptable in engineering practice, as this type of defect was not anticipated when the program was designed. The most important reason for the use of ceramic bearings is energy efficiency.

Williams, J.M. [Oak Ridge National Lab., TN (United States); Miner, J. [United Technologies Corp., West Palm Beach, FL (United States). Pratt and Whitney Div.

1998-03-01T23:59:59.000Z

358

Modeling Of Vacancy Cluster Formation In Ion Implanted Silicon Srinivasan Chakravarthi y and Scott T. Dunham z  

E-Print Network [OSTI]

Modeling Of Vacancy Cluster Formation In Ion Implanted Silicon Srinivasan Chakravarthi y and Scott excess point defects that quickly recombine during annealing leaving net interstitial and vacancy populations. For higher energy implants, the separation be- tween interstitials and vacancies is larger

Dunham, Scott

359

Journal of Power Sources 170 (2007) 216224 Design of an implantable power supply for an intraocular sensor, using  

E-Print Network [OSTI]

the millimeter range, comprise Zinc and Lithium based electrochemistries (Zn- air, Zn/AgO, Li-polymer, Li/MnO2 1 [39]. The smallest commercial batteries cur- rently available on the market, with sizes that span for implantable technologies. Further miniaturization of implantable systems will require new battery technologies

Sastry, Ann Marie

2007-01-01T23:59:59.000Z

360

Percutaneous Transcatheter One-Step Mechanical Aortic Disc Valve Prosthesis Implantation: A Preliminary Feasibility Study in Swine  

SciTech Connect (OSTI)

Purpose. To evaluate the feasibility of one-step implantation of a new type of stent-based mechanical aortic disc valve prosthesis (MADVP) above and across the native aortic valve and its short-term function in swine with both functional and dysfunctional native valves. Methods. The MADVP consisted of a folding disc valve made of silicone elastomer attached to either a nitinol Z-stent (Z model) or a nitinol cross-braided stent (SX model). Implantation of 10 MADVPs (6 Z and 4 SX models) was attempted in 10 swine: 4 (2 Z and 2 SX models) with a functional native valve and 6 (4 Z and 2 SX models) with aortic regurgitation induced either by intentional valve injury or by MADVP placement across the native valve. MADVP function was observed for up to 3 hr after implantation. Results. MADVP implantation was successful in 9 swine. One animal died of induced massive regurgitation prior to implantation. Four MADVPs implanted above functioning native valves exhibited good function. In 5 swine with regurgitation, MADVP implantation corrected the induced native valve dysfunction and the device's continuous good function was observed in 4 animals. One MADVP (SX model) placed across native valve gradually migrated into the left ventricle. Conclusion. The tested MADVP can be implanted above and across the native valve in a one-step procedure and can replace the function of the regurgitating native valve. Further technical development and testing are warranted, preferably with a manufactured MADVP.

Sochman, Jan [Institute for Clinical and Experimental Medicine, Intensive Care Unit, Clinic of Cardiology (Czech Republic)], E-mail: jan.sochman@medicon.cz; Peregrin, Jan H.; Rocek, Miloslav [Institute for Clinical and Experimental Medicine, Department of Diagnostic and Interventional Radiology (Czech Republic); Timmermans, Hans A.; Pavcnik, Dusan; Roesch, Josef [Oregon Health and Sciences University, Dotter Interventional Institute (United States)

2006-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Bubble microstructure evolution and helium behavior in He{sup +} implanted Ni-base alloys  

SciTech Connect (OSTI)

Behavior of ion-implanted helium in Ni as a function of alloying element concentration (Al or Ti) and irradiation conditions (at 20 or 750 C) have been investigated by means of thermal desorption spectrometry (TDS) and transmission electron microscopy (TEM). Substitution elements in solid solution were demonstrated to have substantial influence on the evolution of implanted helium, shifting the TDS spectrum peaks to higher temperature region and increasing the quantity of helium remaining in the samples after long-time postirradiation annealing. TEM investigations showed that in the case of postirradiation annealing, helium bubbles are formed earlier in quenched alloys than in those annealed.

Kalin, B.A.; Chernov, I.I.; Kalashnikov, A.N.; Solovyev, B.G. [Moscow State Engineering Physics Inst., Moscow (Russian Federation). Dept. of Physical Problems of Materials Science

1996-12-31T23:59:59.000Z

362

Metastable phase diagram for Ni-implanted Al and pulse surface melted Al(Ni)  

SciTech Connect (OSTI)

The microstructure of <110> Al implanted with Ni was examined before and after subsequent electron beam pulsed surface melting (65 ns, 1.7 J/cm/sup 2/). Both processes were done with the Al substrate at room temperature. Implantation at several energies (160 to 15 keV) into a given sample produced a nearly constant measured Ni concentration through a approx. 0.1 ..mu..m region below the surface (7). Such samples with concentrations from 8 to 25 at. % Ni were examined, along with a sample with a peak concentration of 32 at. % Ni.

Follstaedt, D.M.; Picraux, S.T.

1984-01-01T23:59:59.000Z

363

Coherent Synchrotron-Based Micro-Imaging Employed for Studies of Micro-Gap Formation in Dental Implants  

SciTech Connect (OSTI)

Biocompatible materials such as titanium are regularly applied in oral surgery. Titanium-based implants for the replacement of missing teeth demand a high mechanical precision in order to minimize micro-bacterial leakage, especially when two-piece concepts are used. Synchrotron-based hard x-ray radiography, unlike conventional laboratory radiography, allows high spatial resolution in combination with high contrast even when micro-sized features in such highly attenuating objects are visualized. Therefore, micro-gap formation at interfaces in two-piece dental implants with the sample under different mechanical loads can be studied. We show the existence of micro-gaps in implants with conical connections and study the mechanical behavior of the mating zone of conical implants during loading. The micro-gap is a potential source of implant failure, i.e., bacterial leakage, which can be a stimulus for an inflammatory process.

Rack, T.; Stiller, M.; Nelson, K. [Charite, Campus Virchow Clinic and Campus Benjamin Franklin, 13353 Berlin (Germany); Zabler, S. [Technische Universitaet Berlin, Strasse des 17. Juni 135, 10623 Berlin (Germany); Rack, A. [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble (France); Riesemeier, H. [Bundesanstalt fuer Materialforschung und -pruefung, Unter den Eichen 80, 12205 Berlin (Germany); Cecilia, A. [Karlsruhe Institute of Technology - ANKA, Pf. 3640, 76021 Karlsruhe (Germany)

2011-09-09T23:59:59.000Z

364

The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide  

SciTech Connect (OSTI)

Exfoliation of Sic by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. Sic thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the implant, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of Sic is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implant-induced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H{sup +} implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required to affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiC01 which is sufficiently free of defects and, thus, more easily electrically activated.

Gregory, R.B.; Holland, O.W.; Thomas, D.K.; Wetteroth, T.A.; Wilson, S.R.

1999-04-05T23:59:59.000Z

365

Ranges and moments of depth distributions of boron and phosphorus implanted into silicon in the energy range 1.7-5.0 MeV with an Eaton NV-GSD/VHE implanter  

SciTech Connect (OSTI)

High energy implantation of dopant atoms is used to form buried layers of high conductivity in silicon. These layers have many potential applications, including triple wells for FLASH memory devices, buried layers for CCD devices, and damage induced gettering regions in all devices. In order to make optimum use of very high energy dopant implants, the depth and profile shape characteristics of these implants need to be determined. This paper presents the results of depth profiling by SIMS of implants of boron and phosphorus in silicon. The implants were done on an Eaton NV-GSD/VHE mechanically scanned implanter with energies of 1.7-3.0 MeV for boron and 3-5 MeV for phosphorus, doses of 1 {times} 10{sup 13}/cm{sup 2} to 1 {times} 10{sup 15}/cm{sup 2}, and tilt/twist orientations of 0{degrees}/0{degrees}, 5.2{degrees}/16.7{degrees}, and 7{degrees}/27{degrees}. The four central moments of the depth distributions, as well as the peak depth have been calculated for each of the profiles. The projected ranges of all these implants are underestimated by TRIM92 calculations.

Rubin, L.; Shaw, W.; Jones, M.A. [Eaton Corporation, Beverly, MA (United States); Wilson, R.G. [Hughes Research Labs., Malibu, CA (United States)

1996-12-31T23:59:59.000Z

366

Heart-to-Heart (H2H): Authentication for Implanted Medical Devices  

E-Print Network [OSTI]

Heart-to-Heart (H2H): Authentication for Implanted Medical Devices Masoud Rostami Rice University Rice University Houston, TX farinaz@rice.edu ABSTRACT We present Heart-to-Heart (H2H), a system patients to over-the-air attack and physical harm. H2H makes use of ECG (heartbeat data

367

Surface studies of nitrogen implanted TiO2 Matthias Batzill a,*, Erie H. Morales b  

E-Print Network [OSTI]

.V. All rights reserved. Keywords: Titanium dioxide; Doping; Nitrogen; Surface science 1. IntroductionSurface studies of nitrogen implanted TiO2 Matthias Batzill a,*, Erie H. Morales b , Ulrike Diebold Available online 3 August 2007 Abstract Rutile TiO2(110) single crystals have been doped by nitrogen

Diebold, Ulrike

368

A Biomimetic Adaptive Algorithm and Low-Power Architecture for Implantable Neural Decoders  

E-Print Network [OSTI]

a bank of adaptive linear filters with kernels that emulate synaptic dynamics. The filters trans- form in cochlear-implant systems, include unwanted heat dissipation in the brain, decreased longevity of batteries han- dle large quantities of high-bandwidth analog data, processing neural input signals in a slow-and-parallel

Sarpeshkar, Rahul

369

A Glucose BioFuel Cell Implanted in Rats Philippe Cinquin1  

E-Print Network [OSTI]

A Glucose BioFuel Cell Implanted in Rats Philippe Cinquin1 *, Chantal Gondran2 , Fabien Giroud2 powerful ones, Glucose BioFuel Cells (GBFCs), are based on enzymes electrically wired by redox mediators applications. Citation: Cinquin P, Gondran C, Giroud F, Mazabrard S, Pellissier A, et al. (2010) A Glucose BioFuel

Paris-Sud XI, Université de

370

Effects of phosphorus implantation and subsequent growth on diamond Euo Sik Choa,*, Cheon An Leea  

E-Print Network [OSTI]

]. Espe- cially, polycrystalline diamond films grown by microwave plasma chemical vapor deposition (MPCVD, and their fabrication is easy and economical. Polycrystalline diamond film has a rough surface and a lot of defectsEffects of phosphorus implantation and subsequent growth on diamond Euo Sik Choa,*, Cheon An Leea

Lee, Jong Duk

371

ENHANCEMENT OF THE SUPERCONDUCTING TRANSITION TEMPERATURES IN ION-IMPLANTED ALUMINIUM ALLOYS (*)  

E-Print Network [OSTI]

L-287 ENHANCEMENT OF THE SUPERCONDUCTING TRANSITION TEMPERATURES IN ION-IMPLANTED ALUMINIUM ALLOYS helium temperatures, have maximum superconducting transition temperatures Tc of 4.2 K (C), 7.35 K (Ge 1976, Classification Physics Abstracts 7.188 - 8.362 One of the crucial problems in superconductivity

Boyer, Edmond

372

Reducing the impact of wind noise on cochlear implant processors with two microphones  

E-Print Network [OSTI]

Behind-the-ear (BTE) processors of cochlear implant (CI) devices offer little to almost no protection from wind noise in most incidence angles. To assess speech intelligibility, eight CI recipients were tested in 3 and 9m/s wind. Results indicated...

Kokkinakis, Kostas; Cox, Casey

2014-04-17T23:59:59.000Z

373

Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)  

SciTech Connect (OSTI)

We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.

Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.

2011-01-05T23:59:59.000Z

374

Development of high productivity medium current ion implanter 'EXCEED 3000AH Evo2'  

SciTech Connect (OSTI)

High productivity medium current ion implanter 'EXCEED 3000AH Evo2' is developed. In semiconductor manufacturing field, improvement of the productivity is continuously required. Especially mass production lines recently tend to use low energy beam and 2 pass implant for higher throughput. The 'Evo2' has been developed in an effort to fulfill these requirements. The 'Evo2' increases low energy beam current by 150 to 250% by applying electrostatic einzel lens called 'V-lens' installed at the exit of the Collimator magnet. This lens is also able to control the beam incident angle by adjusting the upper and lower electrode's voltages independently. Besides, mechanical scanning speed is enhanced to minimize process time of 2 pass implant, while also frequency of the fast beam scanning is enhanced to keep dose uniformity. In addition, a vacuum pumping capability at the target chamber is enhanced to reduce a vacuum waiting time during processing photo-resist wafers. This improvement achieved to reduce process time by 40% for a specific recipe. Furthermore, a modified Indirectly Heated Cathode with electron active Reflection 2 (IHC-R2) ion source which has a long life time filament has been installed. These new elements and/or functions have realized typically 25% improvement of productivity compared to standard EXCEED, and also improve a precise implantation capability.

Ikejiri, T.; Hamamoto, N.; Hisada, S.; Iwasawa, K.; Kawakami, K.; Kokuryu, K.; Miyamoto, N.; Nogami, T.; Sakamoto, T.; Sasada, Y.; Tanaka, K.; Yamamoto, Y.; Yamashita, T. [Nissin Ion Equipment Co., LTD., 575, Kuze-tonoshiro-cho, Minami-ku, Kyoto, 601-8205 (Japan)

2011-01-07T23:59:59.000Z

375

Interstitial defects in silicon from 1{endash}5 keV Si{sup +} ion implantation  

SciTech Connect (OSTI)

Extended defects from 5-, 2-, and 1-keV Si{sup +} ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3{times}10{sup 14}cm{sup {minus}2} and annealing temperatures from 750 to 900{degree}C. Despite the proximity of the surface, {l_brace}311{r_brace}-type defects are observed even for 1 keV. Samples with a peak concentration of excess interstitials exceeding {approximately}1{percent} of the atomic density also contain some {l_brace}311{r_brace} defects which are corrugated across their width. These so-called zig-zag {l_brace}311{r_brace} defects are more stable than the ordinary {l_brace}311{r_brace} defects, having a dissolution rate at 750{degree}C which is ten times smaller. Due to their enhanced stability, the zig-zag {l_brace}311{r_brace} defects grow to lengths that are many times longer than their distance from the surface. It is proposed that zig-zag {l_brace}311{r_brace} defects form during the early stages of annealing by coalescence the high volume density of {l_brace}311{r_brace} defects confined within a very narrow implanted layer. These findings indicate that defect formation and dissolution will continue to control the interstitial supersaturation from ion implantation down to very low energies. {copyright} {ital 1997 American Institute of Physics.}

Agarwal, A.; Haynes, T.E. [Oak Ridge National Laboratory, MS-6048, Oak Ridge, Tennessee 37831 (United States)] [Oak Ridge National Laboratory, MS-6048, Oak Ridge, Tennessee 37831 (United States); Eaglesham, D.J.; Gossmann, H.; Jacobson, D.C.; Poate, J.M. [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States); Erokhin, Y.E. [Eaton Corporation, 108 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States)] [Eaton Corporation, 108 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States)

1997-06-01T23:59:59.000Z

376

PHOSPHORUS-DEFECT INTERACTIONS DURING THERMAL ANNEALING OF ION IMPLANTED SILICON  

E-Print Network [OSTI]

by the financial support of the Semiconductor Research Corporation and the industrial support of several semiconductor manufacturers. I am especially indebted to Paul Packan and Eb Andiheh of Intel Corporation like to thank Craig Jasper of Motorola and Lennie Rubin of Eaton for providing material and implants

Florida, University of

377

SUPERCONDUCTING PROPERTIES OF ALUMINIUM THIN FILMS AFTER ION IMPLANTATION AT LIQUID HELIUM TEMPERATURES (*)  

E-Print Network [OSTI]

L-271 SUPERCONDUCTING PROPERTIES OF ALUMINIUM THIN FILMS AFTER ION IMPLANTATION AT LIQUID HELIUM concentration near AlH2. It is well-known [1] that the superconducting transition temperature Tc of metals as in the electronic density of states N(O) at the Fermi surface. In the case of weak-coupling superconductors

Boyer, Edmond

378

Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation and rapid thermal annealing  

E-Print Network [OSTI]

of terrestrial solar cells as compared to classical furnace or pulsed laser annealing. Unfortunately, drawbacks695 Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation with classical furnace annealing or with classical diffusion process. Revue Phys. Appl. 22 (1987) 695-700 JUILLET

Paris-Sud XI, Université de

379

Nature Macmillan Publishers Ltd 1998 AER excision and bead implantation. Fertilized chicken eggs (SPAFAS) were  

E-Print Network [OSTI]

Nature © Macmillan Publishers Ltd 1998 8 AER excision and bead implantation. Fertilized chicken, the AER from the right forelimb was surgically excised and the embryo was incubated for the time specified of a stage-20 forelimb from which the AER was excised. Virus preparation and infections. An EcoRI fragment

Bogyo, Matthew

380

A Universal Level Converter Towards the Realization of Energy Efficient Implantable Drug Delivery  

E-Print Network [OSTI]

of the system which will then require a heat transfer mech- anism, affecting the portion of the body whereA Universal Level Converter Towards the Realization of Energy Efficient Implantable Drug Delivery and can block an input signal. We have prototyped a ULC using 32nm high-/metal-gate nano-CMOS technology

Mohanty, Saraju P.

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy  

DOE Patents [OSTI]

A method for tailoring or patterning the surface of ceramic articles is provided by implanting ions to predetermined depth into the ceramic material at a selected surface location with the ions being implanted at a fluence and energy adequate to damage the lattice structure of the ceramic material for bi-axially straining near-surface regions of the ceramic material to the predetermined depth. The resulting metastable near-surface regions of the ceramic material are then contacted with energy pulses from collapsing, ultrasonically-generated cavitation bubbles in a liquid medium for removing to a selected depth the ion-damaged near-surface regions containing the bi-axially strained lattice structure from the ceramic body. Additional patterning of the selected surface location on the ceramic body is provided by implanting a high fluence of high-energy, relatively-light ions at selected surface sites for relaxing the bi-axial strain in the near-surface regions defined by these sites and thereby preventing the removal of such ion-implanted sites by the energy pulses from the collapsing ultrasonic cavitation bubbles.

Boatner, Lynn A. (Oak Ridge, TN); Rankin, Janet (Providence, RI); Thevenard, Paul (Caluire, FR); Romana, Laurence J. (Gaudeloupe Antilles, FR)

1995-01-01T23:59:59.000Z

382

Effects of suture material on incision healing, growth and survival of juvenile largemouth bass implanted with  

E-Print Network [OSTI]

Effects of suture material on incision healing, growth and survival of juvenile largemouth bass implanted with miniature radio transmitters: case study of a novice and experienced fish surgeon S. J. COOKE.S.A. (Received 11 November 2002, Accepted 11 April 2003) Juvenile largemouth bass Micropterus salmoides

383

Stability and Three-Dimensional Analysis of Bone Formation in Longitudinally Fluted Miniscrew Implants  

E-Print Network [OSTI]

The purpose of the present study is to evaluate the effects of longitudinal flutes on mini-screw implant (MSI) bone healing and stability. Using 11 skeletally mature New Zealand White rabbits, 33 longitudinally fluted and 33 non-fluted MSIs were...

Truong, An Van

2014-04-22T23:59:59.000Z

384

Plasma-based ion implantation and deposition: A review of physics,technology, and applications  

SciTech Connect (OSTI)

After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

Pelletier, Jacques; Anders, Andre

2005-05-16T23:59:59.000Z

385

Amorphous Ge quantum dots embedded in SiO{sub 2} formed by low energy ion implantation  

SciTech Connect (OSTI)

Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO{sub 2}, i.e., Ge-SiO{sub 2} quantum dot composites, have been formed by ion implantation of {sup 74}Ge{sup +} isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO{sub 2} obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed.

Zhao, J. P. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Physics, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Huang, D. X.; Jacobson, A. J. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Chen, Z. Y.; Makarenkov, B. [Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Chu, W. K. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Physics, University of Houston, Houston, Texas 77204 (United States); Bahrim, B. [Department of Chemistry and Physics, Lamar University, Beaumont, Texas 77710 (United States); Rabalais, J. W. [Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry and Physics, Lamar University, Beaumont, Texas 77710 (United States)

2008-06-15T23:59:59.000Z

386

Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing  

SciTech Connect (OSTI)

A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

Lemaitre, Maxime G. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32601 (United States); Tongay, Sefaattin [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32601 (United States); Department of Physics, University of Florida, Gainesville, Florida 32601 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Nanoscience Institute for Medical and Engineering Technology, University of Florida, Gainesville, Florida 32601 (United States); Wang, Xiaotie [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32601 (United States); Venkatachalam, Dinesh K.; Elliman, Robert G. [Department of Electronic Materials Engineering, Australian National University, Canberra, ACT 0200 (Australia); Fridmann, Joel [Nanoscience Institute for Medical and Engineering Technology, University of Florida, Gainesville, Florida 32601 (United States); Raith USA, Incorporated, Ronkonkoma, New York 11779 (United States); Gila, Brent P.; Appleton, Bill R. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32601 (United States); Nanoscience Institute for Medical and Engineering Technology, University of Florida, Gainesville, Florida 32601 (United States); Hebard, Arthur F. [Department of Physics, University of Florida, Gainesville, Florida 32601 (United States); Ren, Fan [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32601 (United States); Department of Chemical Engineering, University of Florida, Gainesville, Florida 32601 (United States)

2012-05-07T23:59:59.000Z

387

Determination of prescription dose for Cs-131 permanent implants using the BED formalism including resensitization correction  

SciTech Connect (OSTI)

Purpose: The current widely used biological equivalent dose (BED) formalism for permanent implants is based on the linear-quadratic model that includes cell repair and repopulation but not resensitization (redistribution and reoxygenation). The authors propose a BED formalism that includes all the four biological effects (4Rs), and the authors propose how it can be used to calculate appropriate prescription doses for permanent implants with Cs-131. Methods: A resensitization correction was added to the BED calculation for permanent implants to account for 4Rs. Using the same BED, the prescription doses with Au-198, I-125, and Pd-103 were converted to the isoeffective Cs-131 prescription doses. The conversion factor F, ratio of the Cs-131 dose to the equivalent dose with the other reference isotope (F{sub r}: with resensitization, F{sub n}: without resensitization), was thus derived and used for actual prescription. Different values of biological parameters such as ?, ?, and relative biological effectiveness for different types of tumors were used for the calculation. Results: Prescription doses with I-125, Pd-103, and Au-198 ranging from 10 to 160 Gy were converted into prescription doses with Cs-131. The difference in dose conversion factors with (F{sub r}) and without (F{sub n}) resensitization was significant but varied with different isotopes and different types of tumors. The conversion factors also varied with different doses. For I-125, the average values of F{sub r}/F{sub n} were 0.51/0.46, for fast growing tumors, and 0.88/0.77 for slow growing tumors. For Pd-103, the average values of F{sub r}/F{sub n} were 1.25/1.15 for fast growing tumors, and 1.28/1.22 for slow growing tumors. For Au-198, the average values of F{sub r}/F{sub n} were 1.08/1.25 for fast growing tumors, and 1.00/1.06 for slow growing tumors. Using the biological parameters for the HeLa/C4-I cells, the averaged value of F{sub r} was 1.07/1.11 (rounded to 1.1), and the averaged value of F{sub n} was 1.75/1.18. F{sub r} of 1.1 has been applied to gynecological cancer implants with expected acute reactions and outcomes as expected based on extensive experience with permanent implants. The calculation also gave the average Cs-131 dose of 126 Gy converted from the I-125 dose of 144 Gy for prostate implants. Conclusions: Inclusion of an allowance for resensitization led to significant dose corrections for Cs-131 permanent implants, and should be applied to prescription dose calculation. The adjustment of the Cs-131 prescription doses with resensitization correction for gynecological permanent implants was consistent with clinical experience and observations. However, the Cs-131 prescription doses converted from other implant doses can be further adjusted based on new experimental results, clinical observations, and clinical outcomes.

Luo, Wei, E-mail: wei.luo@uky.edu; Molloy, Janelle; Aryal, Prakash; Feddock, Jonathan; Randall, Marcus [Department of Radiation Medicine, University of Kentucky, Lexington, Kentucky 40536 (United States)] [Department of Radiation Medicine, University of Kentucky, Lexington, Kentucky 40536 (United States)

2014-02-15T23:59:59.000Z

388

Mechanical Assessment of Veterinary Orthopedic Implant Technologies: Comparative Studies of Canine Fracture Fixation and Equine Arthrodesis Devices and Techniques  

E-Print Network [OSTI]

The Clamp-Rod Internal Fixator (CRIF) is a fracture fixation implant with growing popularity among veterinarians for its versatility and ease of use. Although the CRIF is currently in clinical use, relatively few reports exist describing...

Baker, Sean Travis

2013-04-30T23:59:59.000Z

389

Evaluation of the dose distribution for prostate implants using various {sup 125}I and {sup 103}Pd sources  

SciTech Connect (OSTI)

Recently, several different models of {sup 125}I and {sup 103}Pd brachytherapy sources have been introduced in order to meet the increasing demand for prostate seed implants. These sources have different internal structures; hence, their TG-43 dosimetric parameters are not the same. In this study, the effects of the dosimetric differences among the sources on their clinical applications were evaluated. The quantitative and qualitative evaluations were performed by comparisons of dose distributions and dose volume histograms of prostate implants calculated for various designs of {sup 125}I and {sup 103}Pd sources. These comparisons were made for an identical implant scheme with the same number of seeds for each source. The results were compared with the Amersham model 6711 seed for {sup 125}I and the Theragenics model 200 seed for {sup 103}Pd using the same implant scheme.

Meigooni, Ali S.; Luerman, Christine M.; Sowards, Keith T. [Department of Radiation Medicine, North Shore University Hospital, Manhasset, New York 11030 and Department of Radiation Medicine, University of Kentucky Medical Center, Lexington, Kentucky 40536 (United States); Department of Radiation Medicine, University of Kentucky Medical Center, Lexington, Kentucky 40536 (United States); James Graham Brown Cancer Center, University of Louisville, Louisville, Kentucky 40202 (United States)

2009-04-15T23:59:59.000Z

390

Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator  

SciTech Connect (OSTI)

We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd{sup 3+} in Al{sub 2}O{sub 3}) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor of the resonators which remain above 10{sup 5}. Using microwave absorption spectroscopy, we observe electron-spin resonances in good agreement with numerical modelling and extract corresponding coupling rates of the order of 1?MHz and spin linewidths of 5065?MHz.

Wisby, I., E-mail: ilana.wisby@npl.co.uk; Tzalenchuk, A. Ya. [National Physical Laboratory, Hampton Road, Teddington TW11 0LW (United Kingdom); Royal Holloway, University of London, Egham TW20 0EX (United Kingdom); Graaf, S. E. de; Adamyan, A.; Kubatkin, S. E. [Department of Microtechnology and Nanoscience, MC2, Chalmers University of Technology, SE-41296, Gothenburg (Sweden); Gwilliam, R. [Advanced Technology Institute, Faculty of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Meeson, P. J. [Royal Holloway, University of London, Egham TW20 0EX (United Kingdom); Lindstrm, T. [National Physical Laboratory, Hampton Road, Teddington TW11 0LW (United Kingdom)

2014-09-08T23:59:59.000Z

391

Gettering of transition metals by cavities in silicon formed by helium ion implantation  

SciTech Connect (OSTI)

We have recently completed studies which quantitatively characterize the ability of nanometer-size cavities formed by He ion implantation to getter detrimental metal impurities in Si. Cavity microstructures formed in Si by ion implantation of He and subsequent annealing have been found to capture metal impurities by two mechanisms: (1) chemisorption on internal walls at low concentrations and (2) silicide precipitation at concentrations exceeding the solid solubility. Experiments utilizing ion-beam analysis, cross-sectional transmission electron microscopy, and secondary ion mass spectrometry were performed to quantitatively characterize the gettering effects and to determine the free energies associated with the chemisorbed metal atoms as a function of temperature. Mathematical models utilizing these results have been developed to predict gettering behavior.

Petersen, G.A.; Myers, S.M.; Follstaedt, D.M.

1996-09-01T23:59:59.000Z

392

Boron-enhanced diffusion of boron from ultralow-energy boron implantation  

SciTech Connect (OSTI)

The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B{sup +}, the threshold implantation dose which leads to BED lies between 3 {times} 10{sup 14} and of 1 {times} 10{sup 15}/cm{sup {minus}2}. Formation of the shallowest possible junctions by 0.5 keV B{sup +} requires that the implant dose be kept lower than this threshold.

Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C. [Lucent Technologies, Murray Hill, NJ (United States). Bell Labs.; Haynes, T.E. [Oak Ridge National Lab., TN (United States). Solid State Div.; Erokhin, Y.E. [Eaton Corp., Beverly, MA (United States)

1998-05-03T23:59:59.000Z

393

Critical issues in the formation of quantum computer test structures by ion implantation  

SciTech Connect (OSTI)

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed.

Schenkel, T.; Lo, C. C.; Weis, C. D.; Schuh, A.; Persaud, A.; Bokor, J.

2009-04-06T23:59:59.000Z

394

Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator  

E-Print Network [OSTI]

We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd$^{3+}$ in Al$_{2}$O$_{3}$) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor of the resonators which remain above $10^{5}$. Using microwave absorption spectroscopy we observe electron-spin resonances in good agreement with numerical modelling and extract corresponding coupling rates of the order of $1$ MHz and spin linewidths of $50 - 65$ MHz.

I. Wisby; S. E. de Graaf; R. Gwilliam; A. Adamyan; S. Kubatkin; P. J. Meeson; A. Ya. Tzalenchuk; T. Lindstrm

2014-09-10T23:59:59.000Z

395

Ion implantation of rare-earth dopants in ferromagnetic thin films  

SciTech Connect (OSTI)

We show that high-dose ion implantation can be used to introduce rare-earth dopants for the control of precessional dynamics in magnetic thin films. Tb and Gd ions have been implanted in Ni{sub 81}Fe{sub 19} through Ta masks at dosages from 1x10{sup 14}/cm{sup 2} to 1x10{sup 15}/cm{sup 2}. Effects on dynamics are found to be similar to those contributed by cosputtered Tb and Gd dopants in Ni{sub 81}Fe{sub 19} (50 nm). Broadband ferromagnetic resonance measurements from 0 to 18 GHz show that adjustments in damping {alpha} from 0.008 to 0.040 are fully intrinsic (Gilbert type) and roughly proportional to dose. The technique enables the creation of films with spatially modulated precessional characteristics.

Dasgupta, V.; Litombe, N.; Bailey, W. E.; Bakhru, H. [Materials Science Program, Department of Applied Physics, Columbia University, 500 West 120th Street, New York, New York 10027 (United States); College of Nanoscale Science and Engineering, SUNY Albany, 251 Fuller Road, Albany, New York 12203 (United States)

2006-04-15T23:59:59.000Z

396

Electrical and optical properties of nitrile rubber modified by ion implantation  

SciTech Connect (OSTI)

Implantation of N{sup +} ion beams are performed on to a non-conjugated elastomer, acrylonirtle butadiene rubber (NBR) with energy 60 keV in the fluence range of 10{sup 14} to 10{sup 16} ions/cm{sup 2}. A decrease in the resistivity of the sample by about eight orders of magnitude is observed in the implanted samples along with color changes. The ion exposed specimens were characterized by means of UV/Vis spectroscopy which shows a shift in the absorption edge value for the as deposited polymer towards higher wavelengths. The band gap is evaluated from the absorption spectra and is found to decrease with increasing fluence. This study can possibly throw light on ion induced changes in the polymer surface.

S, Najidha [Department of Physics, B.J.M Govt: college, Chavara, Kollam, Kerala (India); Predeep, P. [Laboratory for molecular Photonics and Electronics, Department of Physics, National Institute of Technology, Calicut (India)

2014-10-15T23:59:59.000Z

397

Segregation gettering by implantation-formed cavities and B-Si precipitates in silicon  

SciTech Connect (OSTI)

The authors show that Fe, Co, Cu, and Au in Si undergo strong segregation gettering to cavities and B-Si precipitates formed by He or B ion implantation and annealing. The respective mechanisms are argued to be chemisorption on the cavity walls and occupation of solution sites within the disordered, B-rich, B-Si phase. The strengths of the reactions are evaluated, enabling prediction of gettering performance.

Myers, S.M.; Petersen, G.A.; Follstaedt, D.M. [Sandia National Lab., Albuquerque, NM (United States)] [and others

1998-01-01T23:59:59.000Z

398

Everolimus-induced Pneumonitis after Drug-eluting Stent Implantation: A Case Report  

SciTech Connect (OSTI)

Despite the wide use of everolimus as an antineoplastic coating agent for coronary stents to reduce the rate of restenosis, little is known about the health hazards of everolimus-eluting stents (EES). We describe a case of pneumonitis that developed 2 months after EES implantation for angina. Lung pathology demonstrated an organizing pneumonia pattern that responded to corticosteroid therapy. Although the efficacy of EES for ischemic heart disease is well established, EES carries a risk of pneumonitis.

Sakamoto, Susumu, E-mail: susumu1029@gmail.com; Kikuchi, Naoshi; Ichikawa, Atsuo; Sano, Go; Satoh, Keita; Sugino, Keishi; Isobe, Kazutoshi; Takai, Yujiro [Toho University School of Medicine, Department of Respiratory Medicine (Japan); Shibuya, Kazutoshi [Toho University School of Medicine, Department of Pathology (Japan); Homma, Sakae [Toho University School of Medicine, Department of Respiratory Medicine (Japan)

2013-08-01T23:59:59.000Z

399

Bone Implant Interface Investigation by Synchrotron Radiation X-Ray Microfluorescence  

SciTech Connect (OSTI)

Zinc is known to play a relevant role in growth and development; it has stimulatory effects on in vitro and in vivo bone formation and an inhibitory effect on in vitro osteoclastic bone resorption. The inorganic component of the bone tissue is nonstoichiometric apatite; changes in the composition of hidroxyapatite are subject of studies in order to improve the tissue response after implantation. The objective of this study was to investigate the effect of 0.5% zinc-containing hydroxyapatite in comparison to hydroxyapatite on osseous repair of rabbit's tibia. Cylinders (2x6 mm) of both materials were produced according to the specification of the International Organization for Standardization. Ethics Commission on Teaching and Research in Animals approved this project (HUAP-195/06). Fifteen White New Zealand rabbits were submitted to general anesthesia and two perforations (2 mm) were made in each tibia for implantation of zinc-containing hydroxyapatite cylinders (left tibia) and hydroxyapatite cylinders (right tibia). After 1, 2 and 4 weeks, the animals were killed and one fragment of each tibia with the cylinder was collected and embedded in a methacrylate-based resin and cut into slices (approx200 {mu}m thickness), parallel to the implant's long axis with a precision diamond saw for Synchrotron Radiation X-ray Microfluorescence investigation. The accomplishment of the standard procedures helped the planning, execution and the comparative analysis of the results. The chemical and physical properties of the biomaterials were modified after its implantation and the incorporation of zinc. Both materials are biocompatible and promote osteoconduction and favored bone repair.

Calasans-Maia, M. [Odondology Department, Fluminense Federal Univeristy, Niteroi 24030-900, RJ (Brazil); Sales, E.; Lopes, R. T. [Nuclear Instrumentation Laboratory-PEN/COPPE, Federal Univeristy of Rio de Janeiro, Rio de Janeiro 21941-914, RJ (Brazil); Granjeiro, J. M. [Department of Cell and Molecular Biology, Fluminense Federal University, Niteroi 24030-900, RJ (Brazil); Lima, I. [Odondology Department, Fluminense Federal Univeristy, Niteroi 24030-900, RJ (Brazil); Department of Mechanical Engineering and Energy, Rio de Janeiro State University, Regional Campus-Polytechnic Institute-Alberto Rangel, s/n, Vila Nova, room 308, 28630-050, Nova Friburgo, RJ (Brazil)

2010-04-06T23:59:59.000Z

400

Raman spectroscopy for characterization of annealing of ion-implanted InP  

SciTech Connect (OSTI)

Raman spectroscopy has been used as a noncontacting, nondestructive tool to evaluate the properties of Si/sup +/- and Be/sup +/- implanted InP samples annealed at temperatures ranging from 600 to 750C using phosphosilicate glass (PSG) as the encapsulant. Carrier activation, carrier mobility and recovery of damage as a function of anneal temperature obtained from analysis of Raman data agree very well with independent electrical measurements.

Myers, D.R.; Gourley, P.L.; Vaidyanathan, K.V.; Dunlap, H.L.

1982-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films  

SciTech Connect (OSTI)

Vanadium dioxide (VO{sub 2}) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulatortometal transition, the phase transition in VO{sub 2} can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO{sub 2} with erbium ions (Er{sup 3+}) and observe their combined properties. The first excited-state luminescence of Er{sup 3+} lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er{sup 3+} into VO{sub 2} could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO{sub 2} thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO{sub 2} by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ?800?C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO{sub 2} thin films. We conclude that Er-implanted VO{sub 2} can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO{sub 2}.

Lim, Herianto, E-mail: mail@heriantolim.com; Stavrias, Nikolas; Johnson, Brett C.; McCallum, Jeffrey C. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Marvel, Robert E.; Haglund, Richard F. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States)

2014-03-07T23:59:59.000Z

402

Optimal Suturing Technique and Number of Sutures for Surgical Implantation of Acoustic Transmitters in Juvenile Salmonids  

SciTech Connect (OSTI)

The size reduction of acoustic transmitters has led to a reduction in the length of incision needed to implant a transmitter. Smaller suture knot profiles and fewer sutures may be adequate for closing an incision used to surgically implant an acoustic microtransmitter. As a result, faster surgery times and reduced tissue trauma could lead to increased survival and decreased infection for implanted fish. The objective of this study was to assess the effects of five suturing techniques on mortality, tag and suture retention, incision openness, ulceration, and redness in juvenile Chinook salmon Oncorhynchus tshawytscha implanted with acoustic microtransmitters. Suturing was performed by three surgeons, and study fish were held at two water temperatures (12C and 17C). Mortality was low and tag retention was high for all treatments on all examination days (7, 14, 21, and 28 days post-surgery). Because there was surgeon variation in suture retention among treatments, further analyses included only the one surgeon who received feedback training in all suturing techniques. Incision openness and tissue redness did not differ among treatments. The only difference observed among treatments was in tissue ulceration. Incisions closed with a horizontal mattress pattern had more ulceration than other treatments among fish held for 28 days at 17C. Results from this study suggest that one simple interrupted 1 1 1 1 suture is adequate for closing incisions on fish under most circumstances. However, in dynamic environments, two simple interrupted 1 1 1 1 sutures should provide adequate incision closure. Reducing bias in survival and behavior tagging studies is important when making comparisons to the migrating salmon population. Therefore, by minimizing the effects of tagging on juvenile salmon (reduced tissue trauma and reduced surgery time), researchers can more accurately estimate survival and behavior.

Deters, Katherine A.; Brown, Richard S.; Boyd, James W.; Eppard, M. B.; Seaburg, Adam

2012-01-02T23:59:59.000Z

403

A study of laser annealing effects in boron ion implanted polycrystalline silicon films  

E-Print Network [OSTI]

, large-grain polycrysta11ine silicon has potential use for large volume production of low cost solar cells [1-3] . Polycrystalline silicon is easy to prepare and is compa- tible with monolithic silicon integrated circuit technology; however... of 2O pico second [5]. The MOSFET's fabricated to date on thin films of polycrystalline silicon have also exhibited poor transconductance [5J. It has been reported that the electrical properties of ion implanted polycrystalline silicon can...

Suh, Inhak Harry

1982-01-01T23:59:59.000Z

404

The role of helium implantation induced vacancy defect on hardening of tungsten  

SciTech Connect (OSTI)

Vacancy-type defects created by helium implantation in tungsten and their impact on the nano-hardness characteristics were investigated by correlating the results from the positron annihilation spectroscopy and the nano-indentation technique. Helium implantation was performed at room temperature (RT) and at an elevated temperate of 600?C. Also, the effect of post-annealing of the RT implanted sample was studied. The S parameter characterizing the open volume in the material was found to increase after helium irradiation and is significantly enhanced for the samples thermally treated at 600?C either by irradiation at high temperature or by post-annealing. Two types of helium-vacancy defects were detected after helium irradiation; small defects with high helium-to-vacancy ratio (low S parameter) for RT irradiation and large defects with low helium-to-vacancy ratio (high S parameter) for thermally treated tungsten. The hardness of the heat treated tungsten coincides with the S parameter, and hence is controlled by the large helium-vacancy defects. The hardness of tungsten irradiated at RT without thermal treatment is dominated by manufacturing related defects such as dislocation loops and impurity clusters and additionally by trapped He atoms from irradiation effects, which enhance hardness. He-stabilized dislocation loops mainly cause the very high hardness values in RT irradiated samples without post-annealing.

Ou, Xin, E-mail: x.ou@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200250 (China); Anwand, Wolfgang, E-mail: w.anwand@hzdr.de; Kgler, Reinhard, E-mail: r.koegler@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Zhou, Hong-Bo [Department of Physics, Beihang University, Beijing 100191 (China); Richter, Asta, E-mail: asta.richter@th-wildau.de [Technische Hochschule Wildau, Hochschulring1, 15745 Wildau (Germany)

2014-03-28T23:59:59.000Z

405

High-performance carbon nanotube-implanted mesoporous carbon spheres for supercapacitors with low series resistance  

SciTech Connect (OSTI)

Research highlights: {yields} CNTs-implanted porous carbon spheres are prepared by using gelatin as soft template. {yields} Homogeneously distributed CNTs form a well-develop network in carbon spheres. {yields} CNTs act as a reinforcing backbone assisting the formation of pore structure. {yields} CNTs improve electrical conductivity and specific capacitance of supercapacitor. -- Abstract: Carbon nanotube-implanted mesoporous carbon spheres were prepared by an easy polymerization-induced colloid aggregation method using gelatin as a soft template. Scanning electron microscopy, transmission electron microscopy and nitrogen adsorption-desorption measurements reveal that the materials are mesoporous carbon spheres, with a diameter of {approx}0.5-1.0 {mu}m, a specific surface area of 284 m{sup 2}/g and average pore size of 3.9 nm. Using the carbon nanotube-implanted mesoporous carbon spheres as electrode material for supercapacitors in an aqueous electrolyte solution, a low equivalent series resistance of 0.83 {Omega} cm{sup 2} and a maximum specific capacitance of 189 F/g with a measured power density of 8.7 kW/kg at energy density of 6.6 Wh/kg are obtained.

Yi, Bin [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China)] [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China); Chen, Xiaohua, E-mail: hudacxh62@yahoo.com.cn [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China)] [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China); Guo, Kaimin [College of Physics and Electronic Science, Changsha University of Science and Technology (China)] [College of Physics and Electronic Science, Changsha University of Science and Technology (China); Xu, Longshan [Department of Mechanical Engineering, Xiamen University of Technology, Xiamen 361024 (China)] [Department of Mechanical Engineering, Xiamen University of Technology, Xiamen 361024 (China); Chen, Chuansheng [College of Physics and Electronic Science, Changsha University of Science and Technology (China)] [College of Physics and Electronic Science, Changsha University of Science and Technology (China); Yan, Haimei; Chen, Jianghua [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China)] [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China)

2011-11-15T23:59:59.000Z

406

Implant breast reconstruction followed by radiotherapy: Can helical tomotherapy become a standard irradiation treatment?  

SciTech Connect (OSTI)

To evaluate the benefits and limitations of helical tomotherapy (HT) for loco-regional irradiation of patients after a mastectomy and immediate implant-based reconstruction. Ten breast cancer patients with retropectoral implants were randomly selected for this comparative study. Planning target volumes (PTVs) 1 (the volume between the skin and the implant, plus margin) and 2 (supraclavicular, infraclavicular, and internal mammary nodes, plus margin) were 50 Gy in 25 fractions using a standard technique and HT. The extracted dosimetric data were compared using a 2-tailed Wilcoxon matched-pair signed-rank test. Doses for PTV1 and PTV2 were significantly higher with HT (V95 of 98.91 and 97.91%, respectively) compared with the standard technique (77.46 and 72.91%, respectively). Similarly, the indexes of homogeneity were significantly greater with HT (p = 0.002). HT reduced ipsilateral lung volume that received {>=}20 Gy (16.7 vs. 35%), and bilateral lungs (p = 0.01) and neighboring organs received doses that remained well below tolerance levels. The heart volume, which received 25 Gy, was negligible with both techniques. HT can achieve full target coverage while decreasing high doses to the heart and ipsilateral lung. However, the low doses to normal tissue volumes need to be reduced in future studies.

Massabeau, Carole, E-mail: cmassabeau@hotmail.com [Department of Radiation Oncology, Institut Curie, Paris (France); Fournier-Bidoz, Nathalie; Wakil, Georges; Castro Pena, Pablo; Viard, Romain; Zefkili, Sofia; Reyal, Fabien; Campana, Francois; Fourquet, Alain; Kirova, Youlia M. [Department of Radiation Oncology, Institut Curie, Paris (France)

2012-01-01T23:59:59.000Z

407

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling  

SciTech Connect (OSTI)

A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes advantage of the fact that metal impurities, such as Au, are trapped in the region of excess vacancies produced by MeV Si implants into silicon. In this work, the clustered-vacancy regions produced by 1-, 2-, and 8-MeV Si implants into silicon have been labeled with Au diffused in from the front surface at 750thinsp{degree}C. The trapped Au was profiled with Rutherford backscattering spectrometry. The dynamics of the clustered-vacancy region were monitored for isochronal annealing at 750{endash}1000thinsp{degree}C, and for isothermal annealing at 950thinsp{degree}C, for 10{endash}600 s. Cross-sectional transmission electron microscopy analysis revealed that after the drive-in anneal, the Au in the region of vacancy clusters is in the form of precipitates. The results demonstrate that the Au-labeling technique offers a convenient and potentially quantitative tool for depth profiling vacancies in clusters. {copyright} {ital 1998 American Institute of Physics.}

Venezia, V.C.; Eaglesham, D.J. [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States); Haynes, T.E. [Solid State Division, Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)] [Solid State Division, Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States); Agarwal, A. [Semiconductor Equipment Operations, Eaton Corporation, Beverly, Massachusetts 01915 (United States)] [Semiconductor Equipment Operations, Eaton Corporation, Beverly, Massachusetts 01915 (United States); Jacobson, D.C.; Gossmann, H.; Baumann, F.H. [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

1998-11-01T23:59:59.000Z

408

Spin-dependent recombination at arsenic donors in ion-implanted silicon  

SciTech Connect (OSTI)

Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination using microwave photoconductivity and electrically detected magnetic resonance monitoring the direct current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance, in particular, of As in weak magnetic fields and at low resonance frequencies (401200 MHz), where high-field-forbidden transitions between the magnetic sublevels can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.

Franke, David P., E-mail: david.franke@wsi.tum.de; Brandt, Martin S. [Walter Schottky Institut and Physik-Department, Technische Universitt Mnchen, Am Coulombwall 4, 85748 Garching (Germany); Otsuka, Manabu; Matsuoka, Takashi; Itoh, Kohei M. [School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Vlasenko, Leonid S.; Vlasenko, Marina P. [A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)

2014-09-15T23:59:59.000Z

409

Peripherally Placed Totally Implantable Venous-access Port Systems of the Forearm: Clinical Experience in 763 Consecutive Patients  

SciTech Connect (OSTI)

The aim of this study is to evaluate the effectiveness and safety of percutaneously placed totally implantable venous-access ports (TIVAPs) of the forearm. Between January 2006 and October 2008, peripheral TIVAPs were implanted in 763 consecutive patients by ultrasound and fluoroscopic guidance. All catheters were implanted under local anesthesia and were tunneled subcutaneously. Indication, technical success, and complications were retrospectively analyzed according to Society of Interventional Radiology (SIR) criteria. Presence of antibiotic prophylaxis, periprocedurally administered drugs (e.g., sedation), and laboratory results at the time of implantation were analyzed. Maintenance during the service interval was evaluated. In total, 327,499 catheter-days were analyzed. Technical success rate was 99.3%. Reasons for initial failure of implantation were either unexpected thrombosis of the subclavian vein, expanding tumor mass of the mediastinum, or failure of peripheral venous access due to fragile vessels. Mean follow-up was 430 days. There were 115 complications observed (15.1%, 0.03 per 100 catheter-days), of which 33 (4.3%) were classified as early (within 30 days from implantation) and 82 (10.7%) as late. Catheter-related venous thrombosis was found in 65 (8.5%) of 763 (0.02 per 100 catheter-days) TIVAPs. Infections were observed in 41 (5.4%) of 763 (0.01 per 100 catheter-days) devices. Other complications observed included dislocation of the catheter tip (0.8%), occlusion (0.1%), or rupture (0.1%) of the port catheter. Dislocated catheters were corrected during a second interventional procedure. In conclusion, implantation of percutaneously placed peripheral TIVAPs shows a high technical success rate and low risk of early complications when ultrasound and fluoroscopic guidance are used. Late complications are observed three times as often as early complications.

Goltz, Jan P., E-mail: Goltz@roentgen.uni-wuerzburg.de; Scholl, Anne; Ritter, Christian O. [University of Wuerzburg, Institute of Radiology (Germany); Wittenberg, Guenther [Evangelisches Krankenhaus Bielefeld Gilead, Institute of Radiology (Germany); Hahn, Dietbert; Kickuth, Ralph [University of Wuerzburg, Institute of Radiology (Germany)

2010-12-15T23:59:59.000Z

410

The Efficacy of Ultraviolet Radiation for Sterilizing Tools Used for Surgically Implanting Transmitters into Fish  

SciTech Connect (OSTI)

Telemetry is frequently used to examine the behavior of fish, and the transmitters used are normally surgically implanted into the coelom of fish. Implantation requires the use of surgical tools such as scalpels, forceps, needle holders, and sutures. When several fish are implanted consecutively for large telemetry studies, it is common for surgical tools to be sterilized or, at minimum, disinfected between each use so that pathogens that may be present are not spread among fish. However, autoclaving tools can take a long period of time, and chemical sterilants or disinfectants can be harmful to both humans and fish and have varied effectiveness. Ultraviolet (UV) radiation is commonly used to disinfect water in aquaculture facilities. However, this technology has not been widely used to sterilize tools for surgical implantation of transmitters in fish. To determine its efficacy for this application, Pacific Northwest National Laboratory researchers used UV radiation to disinfect surgical tools (i.e., forceps, needle holder, stab scalpel, and suture) that were exposed to one of four aquatic organisms that typically lead to negative health issues for salmonids. These organisms included Aeromonas salmonicida, Flavobacterium psychrophilum, Renibacterium salmoninarum, and Saprolegnia parasitica. Surgical tools were exposed to the bacteria by dipping them into a confluent suspension of three varying concentrations (i.e., low, medium, high). After exposure to the bacterial culture, tools were placed into a mobile Millipore UV sterilization apparatus. The tools were then exposed for three different time periods2, 5, or 15 min. S. parasitica, a water mold, was tested using an agar plate method and forceps-pinch method. UV light exposures of 5 and 15 min were effective at killing all four organisms. UV light was also effective at killing Geobacillus stearothermophilus, the organism used as a biological indicator to verify effectiveness of steam sterilizers. These techniques appear to provide a quick alternative disinfection technique for some surgical tools that is less harmful to both humans and fish while not producing chemical waste. However, we do not recommend using these methods with tools that have overlapping parts or other structures that cannot be directly exposed to UV light such as needle holders.

Walker, Ricardo W.; Markillie, Lye Meng; Colotelo, Alison HA; Gay, Marybeth E.; Woodley, Christa M.; Brown, Richard S.

2013-02-28T23:59:59.000Z

411

Suppression of tin precipitation in SiSn alloy layers by implanted carbon  

SciTech Connect (OSTI)

By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.

Gaiduk, P. I., E-mail: gaiduk@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Belarusian State University, prosp. Nezavisimosti 4, 220030 Minsk (Belarus); Lundsgaard Hansen, J., E-mail: johnlh@phys.au.dk; Nylandsted Larsen, A., E-mail: anl@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Bregolin, F. L., E-mail: f.lipp-bregolin@hzdr.de; Skorupa, W., E-mail: W.Skorupa@hzdr.de [Department of Semiconductor Materials, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrae 400, 01328 Dresden (Germany)

2014-06-09T23:59:59.000Z

412

Collagen fibre implant for tendon and ligament biological augmentation. In vivo study in an ovine model  

E-Print Network [OSTI]

) for 2 9 30 min. The hydrated and crosslinked assembly was then air dried overnight. Removal of PEG was confirmed via both differential scanning calorimetry and Fourier transform infrared spectroscopy in comparison with unwashed controls (data not shown... of mechanical properties and tissue integration. Materials and methods Implant manufacturing Acid-swollen type-I collagen from bovine corium was dispersed at 6 mg mL-1 in 2 mM HCl for at least 15 h, blended and then degassed at 20 mTorr and stored in 30-m...

Enea, D; Gwynne, J; Kew, S; Arumugam, M; Shepherd, J; Brooks, R; Ghose, S; Best, Serena Michelle; Cameron, Ruth Elizabeth; Rushton, N

2012-06-20T23:59:59.000Z

413

Dept. of Aerospace Engg. Department of Aerospace Engineering  

E-Print Network [OSTI]

Design/Development of Autonomous Flying Vehicles 3 #12;Research Facilities Aerodynamics Group Various Computational Combustion Combustion Instabilities Multiphase Flow Simulation Fuel Injection Strategies Flows Hypersonic & Low density flows Fuel injection & Mixing for supersonic combustion Vortices

Das, Bijoy Krishna

414

The susceptibility of silicon-ion implanted gate insulators to x-ray radiation-induced defect generation  

SciTech Connect (OSTI)

This paper examines the x-ray susceptibility of silicon-ion implanted gate insulators of insulated gate-field effect transistors (IGFETs). It is found that silicon-ion implanted gate insulators appear to be much more susceptible to x-ray radiation induced defect generation than unimplanted devices. The residual defect density in silicon-implanted devices, following x-ray radiation, and subsequent postmetal annealing for up to 60 min is found to be greater than that in unimplanted devices. The results with silicon ions indicate that if the insulator is damaged by such a species during processing, as might occur due to knock-on from the gate electrode during source/drain formation, unannealable defects will form which would also tend to make the device structure more susceptible to radiation damage in a hostile environment, or to large hot- electron drift in conventional use.

Reisman, A.; Sune, C.T.; Williams, C.K. (MCNC, Research Triangle Park, NC (US))

1991-03-01T23:59:59.000Z

415

Correlation of experimental damage data for the development of the UT-MARLOWE Monte Carlo ion implant simulator  

SciTech Connect (OSTI)

The Monte Carlo ion implant simulator UT-MARLOWE has usually been verified using a large array of Secondary Ion Mass Spectroscopy (SIMS) data ({approx}200 profiles per ion species)(1). A model has recently been developed (1) to explicitly simulate defect production, diffusion, and their interactions during the picosecond 'defect production stage' of ion implantation. In order to thoroughly validate this model, both SIMS and various damage measurements were obtained (primarily channeling-Rutherford Backscattering Spectroscopy, Differential Reflectometry and Tapered Groove Profilometry, but supported with SEM and XTEM data). In general, the data from the various experimental techniques was consistent, and the Kinetic Accumulation Damage Model (KADM) was developed and validated using this data. This paper discusses the gathering of damage data in conjunction with SIMS in support of the development of an ion implantation simulator.

Morris, M. F. [Motorola, Mesa, Arizona 85202 (United States); Tian, S. [Avante, Fremont, California 94538 (United States); Chen, Y.; Tasch, A. [Department of Electrical and Computer Engineering, University of Texas, Austin, Texas 78723 (United States); Baumann, S. [Evans Texas, Round Rock, Texas 78681 (United States); Kirchhoff, J. F. [Charles Evans and Assoc., California 94603 (United States); Hummel, R. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Prussin, S. [Electrical Engineering Department, UCLA, Los Angeles, California, 90024 (United States); Kamenitsa, D. [Eaton Corporation, Austin, Texas 78717 (United States); Jackson, J. [Eaton Corporation, Beverly, Massachusetts 01915 (United States)

1999-06-10T23:59:59.000Z

416

InP DHBT IC Technology with Implanted Collector-Pedestal and Electroplated Device Contacts M. Urteaga, K. Shinohara, R. Pierson, P. Rowell and B. Brar  

E-Print Network [OSTI]

InP DHBT IC Technology with Implanted Collector-Pedestal and Electroplated Device Contacts M that incorporates an ion implanted N+ collector-pedestal for reduction of extrinsic collector-base capacitance Ccb without a collector pedestal. Static frequency-divider circuits have been realized in the technology

Rodwell, Mark J. W.

417

Photovoltaic retinal prosthesis: implant fabrication and performance This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network [OSTI]

Photovoltaic retinal prosthesis: implant fabrication and performance This article has been (11pp) doi:10.1088/1741-2560/9/4/046014 Photovoltaic retinal prosthesis: implant fabrication/046014 Abstract The objective of this work is to develop and test a photovoltaic retinal prosthesis for restoring

Palanker, Daniel

418

Space Science Technology Health General Sci-fi & Gaming Oddities International Business Politics Education Entertainment Sports Implant Maps Heart Electrical Activity In  

E-Print Network [OSTI]

Education Entertainment Sports Implant Maps Heart Electrical Activity In Unprecedented Detail Posted on of implantable device for measuring the heart's electrical output that they say is a vast improvement over allows for measuring electrical activity with greater resolution in time and space. The new device can

Rogers, John A.

419

Strong segregation gettering of transition metals by implantation-formed cavities and boron-silicide precipitates in silicon  

SciTech Connect (OSTI)

We have mechanistically and quantitatively characterized the binding of transition-metal impurities in Si to cavities formed by He implantation and to B-Si precipitates resulting from B implantation. Both sinks are inferred to act by the segregation of metal atoms to pre-existing low-energy sites, namely surface chemisorption sites in the case of cavities and bulk solution sites in the case of the B-Si phase. These gettering processes exhibit large binding energies, and they are predicted to remain active for arbitrarily small initial impurity concentrations as a result of the segregation mechanisms. Both appear promising for gettering in Si devices.

Myers, S.M.; Petersen, G.A.; Follstaedt, D.M.; Headley, T.J. [and others

1996-06-01T23:59:59.000Z

420

Field emission from gadolinium silicide prepared by ion implantation with electron beam annealing  

SciTech Connect (OSTI)

A silicon-based field emission cathode, the rare earth silicide GdSi{sub 2} was prepared by implanting Gd ions into silicon using a metal vapor vacuum arc ion source and subsequently annealed by electron beam. For as-implanted samples, turn-on field was about 21 V/{mu}m at a current density of 1 {mu}A/cm{sup 2} and a field emission current density of 1 mA/cm{sup 2} was reached at an applied field of 34 V/{mu}m. After annealing, the turn-on field could be as low as 9 V/{mu}m and the current density of 1 mA/cm{sup 2} can be reached at an applied field of 14 V/{mu}m. X-ray diffraction with x-ray photoelectron spectroscopy analyses and atomic force microscopy were used to characterize microstructure changes of the samples. The results showed that these excellent field emission characteristics were attributed to the GdSi{sub 2} compounds formed in the samples. The field emission mechanism was discussed in terms of Fowler-Nordheim (FN) theory. It was found that FN plots could be divided into two segments obviously, and this was perhaps because of the thermal effect in the process of field emission.

Duan, H. G.; Xie, E. Q.; Ye, F. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)

2007-03-15T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Preoperative irradiation, lymphadenectomy, and 125iodine implantation for patients with localized carcinoma of the prostate  

SciTech Connect (OSTI)

Fifty-four patients with clinically and surgically localized prostatic carcinoma were treated with low-dose preoperative irradiation (1050 cGy), pelvic lymphadenectomy, and interstitial /sup 125/Iodine implantation. The follow-up range is 2 to 9 years with a median follow-up of 5 years. Overall local tumor control is 92%. Actuarial 5-year survival is 86% and the actuarial disease-free survival at 5 years is 73%. Patients with poorly differentiated tumors have a significantly worse actuarial survival (62%) at 5 years than patients with well (95%) or moderately well differentiated tumors (93%), p = 0.04. Disease-free survival at 5 years was influenced by grade: well (100%), moderate (60%), and poor (48%), p = 0.03. Multivariate regression analysis indicates that only the degree of differentiation (p = 0.05) significantly impacts on survival. Both degree of differentiation (p = 0.04) and nodal status (p = 0.03) significantly influence disease-free survival. Potency has been maintained in 71% of patients potent at the time of implantation. Late reactions have been acceptable to date: bladder outlet obstruction (13%), mild proctitis (13%), cystourethritis (6%), incontinence (2%), and prostatic calculi (2%).

DeLaney, T.F.; Shipley, W.U.; O'Leary, M.P.; Biggs, P.J.; Prout, G.R. Jr.

1986-10-01T23:59:59.000Z

422

Areas of Specialization Aerospace Engineering  

E-Print Network [OSTI]

Engineering Structural Health Monitoring Turbulence & Fluid Mechanics Wind Energy Applied Physics Biomedical Electrochemical Engineering Materials Microfabricated Systems Nanotechnology Polymers & Complex Fluids Sustainable Controls Design Dynamics & Vibrations Energy Engineering Environmental Sustainability Fluid Mechanics

Kamat, Vineet R.

423

JOURNAL DE PHYSIQUE Colloque C6, supplkment au no 12, Tome 37, DPcembre 1976,page C6-897 M~SSBAUERSTUDIES OF' lZ9IATOMS IMPLANTED IN a-AND fl-TIN  

E-Print Network [OSTI]

~SSBAUERSTUDIES OF' lZ9IATOMS IMPLANTED IN a- AND fl-TIN H. DE WAARD and G. J. KEMERINK Laboratorium voor Algemene on the basis of a simple model. Implants of 1291 in /3 tin yield two line spectra identicalto those found for implants in a tin converted to /3 tin by heating. Repeated phase transitions show that the impurity

Paris-Sud XI, Universit de

424

104 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 31, NO. 1, FEBRUARY 2003 Modeling Plasma Immersion Ion Implantation  

E-Print Network [OSTI]

Ion Implantation Under Trapezoidal Voltage Pulses Joaquim José Barroso, Jóse Osvaldo Rossi, and Mário Research, S.J. Campos, SP 12201-970, Brazil (e-mail: barroso@plasma.inpe.br). Digital Object Identifier 10

425

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin "lms  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin, As ngstro( m Solar Center, P.O. Box 534, SE-751 21 Uppsala, Sweden Department of Materials Science Mo thin "lms used as back contacts for Cu(In,Ga)Se solar cells. The samples were analysed

Rockett, Angus

426

Guidage et commande de machines de chantier De l'implantation statique celle cinmatique Werner Stempfhuber et Hilmar Ingensand  

E-Print Network [OSTI]

Guidage et commande de machines de chantier ­ De l'implantation statique à celle cinématique Werner Stempfhuber et Hilmar Ingensand Résumé La problématique du guidage et de la commande de machines de chantier collaboration avec les disciplines spécifiques de la construction de machines, de la cybernétique et le

427

Fabrication of an inexpensive, implantable cooling device for2 reversible brain deactivation in animals ranging from rodents3  

E-Print Network [OSTI]

function (see Malpeli 1999 for84 review). Compared to cooling, such techniques are especially useful1 1 Fabrication of an inexpensive, implantable cooling device for2 reversible brain deactivation, California15 16 Running head: A lightweight cooling device for brain deactivation17 18 19 20 21 Text: 41

Krubitzer, Leah A.

428

Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas  

E-Print Network [OSTI]

Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas- sions (CD).3 An example of this process is fluorocarbon plasma etching of trenches and vias in SiO2 and stopping on a crystalline Si layer. The fluorocarbon radicals produced in the plasma deposit a polymer

Kushner, Mark

429

A comparison of implantation methods for large PIT tags or injectable acoustic transmitters in juvenile Chinook salmon  

SciTech Connect (OSTI)

The miniaturization of acoustic transmitters may allow greater flexibility in terms of the size and species of fish available to tag. New downsized injectable acoustic tags similar in shape to passive integrated transponder tags can be rapidly injected rather than surgically implanted through a sutured incision, as is current practice. Before wide-scale field use of these injectable transmitters, standard protocols to ensure the most effective and least damaging methods of implantation must be developed. Three implantation methods were tested in various sizes of juvenile Chinook salmon Oncorhynchus tschawytscha. Methods included a needle bevel-down injection, a needle bevel-up injection with a 90-degree rotation, and tag implantation through an unsutured incision. Tagged fish were compared to untagged control groups. Weight and wound area were measured at tagging and every week for 3 weeks; holding tanks were checked daily for mortalities and tag losses. No differences among treatments were found in growth, tag loss, or survival, but wound area was significantly reduced among incision-treated fish. The bevel-up injection had the worst results in terms of tag loss and wound area and also had high mortality. Implantation through an incision resulted in the lowest tag loss but the highest mortality. Fish from the bevel-down treatment group had the least mortality; wound areas also were smaller than the bevel-up treatment group. Cumulatively, the data suggest that the unsutured incision and bevel-down injection methods were the most effective; the drawbacks of both methods are described in detail. However, we further recommend larger and longer studies to find more robust thresholds for tagging size that include more sensitive measures.

Cook, Katrina V.; Brown, Richard S.; Deng, Zhiqun; Klett, Ryan S.; Li, Huidong; Seaburg, Adam; Eppard, M. B.

2014-04-15T23:59:59.000Z

430

Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory  

SciTech Connect (OSTI)

Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitancevoltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7?kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding the W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.

Wang, Jer-Chyi, E-mail: jcwang@mail.cgu.edu.tw; Chang, Wei-Cheng; Lai, Chao-Sung, E-mail: cslai@mail.cgu.edu.tw [Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan (China); Chang, Li-Chun [Department of Material Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taishan 24301, New Taipei City, Taiwan (China); Ai, Chi-Fong; Tsai, Wen-Fa [Institute of Nuclear Energy Research, Atomic Energy Council, Longtan 325, Taoyuan, Taiwan (China)

2014-03-15T23:59:59.000Z

431

Metal gettering by boron-silicide precipitates in boron-implanted silicon  

SciTech Connect (OSTI)

We show that Fe, Co, Cu, and Au impurities in Si are strongly gettered to boron-silicide precipitates formed by supersaturation B implantation and annealing. Effective binding free energies relative to interstitial solution range form somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperatures {le}1100{degrees}C lack long range structural order but closely resemble and icosahedral B{sub 3}Si phase in composition, local bonding, and chemical potential. Evidence indicates that the metal atoms go into solution in the B-Si phase, and this is interpreted in terms of the novel bonding and structural characteristics of B-rich icosahedral compounds.

Myers, S.M.; Petersen, G.A.; Headley, T.J.; Michael, J.R.; Aselage, T.A.; Seager, C.H.

1996-09-01T23:59:59.000Z

432

Impurity gettering in silicon using cavities formed by helium implantation and annealing  

DOE Patents [OSTI]

Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer.

Myers, Jr., Samuel M. (Albuquerque, NM); Bishop, Dawn M. (Albuquerque, NM); Follstaedt, David M. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

433

Impurity gettering in silicon using cavities formed by helium implantation and annealing  

DOE Patents [OSTI]

Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer. 4 figs.

Myers, S.M. Jr.; Bishop, D.M.; Follstaedt, D.M.

1998-11-24T23:59:59.000Z

434

Electrical activation and spin coherence of ultra low doseantimony implants in silicon  

SciTech Connect (OSTI)

We implanted ultra low doses (0.2 to 2 x 10{sup 11} cm{sup -2}) of Sb ions into isotopically enriched {sup 28}Si, and probed electrical activation and electron spin relaxation after rapid thermal annealing. Strong segregation of dopants towards both Si{sub 3}N{sub 4} and SiO{sub 2} interfaces limits electrical activation. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant profiles, and the interface quality. A spin decoherence time, T{sub 2}, of 1.5 ms is found for profiles peaking 25 nm below a Si/SiO{sub 2} interface, increasing to 2.1 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

Schenkel, T.; Tyryshkin, A.M.; de Sousa, R.; Whaley, K.B.; Bokor,J.; Liddle, J.A.; Persaud, A.; Shangkuan, J.; Chakarov, I.; Lyon, S.A.

2005-07-13T23:59:59.000Z

435

Crucial role of implanted atoms on dynamic defect annealing in ZnO  

SciTech Connect (OSTI)

Processes of defect formation in radiation hard semiconductors exhibiting efficient dynamic annealing are different from those in amorphizible ones, and the latter are generally more well-studied. In the present work, we investigate structural disorder in wurtzite ZnO, which is a radiation hard material, implanted with different ions at room temperature and 15?K. The sample analysis was undertaken by Rutherford backscattering/channeling spectrometry performed in-situ without changing the sample temperature. The fluence dependence of bulk disorder exhibits the so-called IV-stage evolution, where the high fluence regime is characterized by both a strong influence on the damage build-up by the ion type and a reverse temperature effect. A straightforward methodology is demonstrated to differentiate between the contributions of pure ballistic and ion-defect reaction processes in the damage formation.

Azarov, A. Yu.; Kuznetsov, A. Yu.; Svensson, B. G. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Wendler, E. [Friedrich-Schiller-Universitt Jena, Institut fr Festkrperphysik, Max-Wien-Platz 1, 07743 Jena (Germany)

2014-02-03T23:59:59.000Z

436

N-type doping of Ge by As implantation and excimer laser annealing  

SciTech Connect (OSTI)

The diffusion and activation of arsenic implanted into germanium at 40?keV with maximum concentrations below and above the solid solubility (8??10{sup 19}?cm{sup ?3}) have been studied, both experimentally and theoretically, after excimer laser annealing (??=?308?nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1??10{sup 20}?cm{sup ?3}, which represents a new record for the As-doped Ge system.

Milazzo, R.; Napolitani, E., E-mail: enrico.napolitani@unipd.it; De Salvador, D.; Mastromatteo, M.; Carnera, A. [CNR-IMM MATIS and Dipartimento di Fisica Astronomia, Universit di Padova, Via Marzolo 8, 35131 Padova (Italy); Impellizzeri, G.; Boninelli, S.; Priolo, F.; Privitera, V. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Universit di Catania, Via S. Sofia 64, 95123 Catania (Italy); Fisicaro, G.; Italia, M.; La Magna, A. [CNR-IMM, Z.I. VIII Strada 5, 95121 Catania (Italy); Cuscun, M.; Fortunato, G. [CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy)

2014-02-07T23:59:59.000Z

437

Buried layer/connecting layer high energy implantation for improved CMOS latch-up  

SciTech Connect (OSTI)

An integrated P-Buried Layer formed by MeV ion implantation combined with a localized P-Connecting Layer has been studied for latch-up isolation improvements for advanced CMOS technology. Latch-up trigger currents have been characterized with regards to buried layer dose/energy, connecting layer dose/energy, and n-well retrograde dose. Simulation results confirmed by data indicate that P+ injection trigger currents > 450 {mu}A/{mu}m can be achieved by utilizing certain combinations of B.L./C.L. and n-well retrograde doses for n+/p+ spacings = 2.0{mu}m. The B.L./C.L. process architecture shows great promise for providing an alternative isolation technique for latch-up improvement that is easy to implement, and for eliminating the dependence on epi silicon for latch-up control.

Morris, W. [Silicon Engineering, Austin, TX (United States); Rubin, L. [Eaton Corporation, Beverly, MA (United States); Wristers, D. [Advanced Micro Devices, Austin, TX (United States)

1996-12-31T23:59:59.000Z

438

Performance Assessment of Suture Type in Juvenile Chinook Salmon Surgically Implanted with Acoustic Transmitters  

SciTech Connect (OSTI)

The objective of this study was to determine the best overall suture material to close incisions from the surgical implantation of Juvenile Salmon Acoustic Telemetry System (JSATS) acoustic microtransmitters in subyearling Chinook salmon Oncorhynchus tshawytscha. The effects of seven suture materials, four surgeons, and two water temperatures on suture retention, incision openness, tag retention, tissue inflammation, and tissue ulceration were quantified. The laboratory study, conducted by researchers at the Pacific Northwest National Laboratory, supports a larger effort under way for the U.S. Army Corps of Engineers, Portland District, aimed at determining the suitability of acoustic telemetry for estimating short- and longer-term (30-60 days) juvenile-salmonid survival at Columbia and Snake River dams and through the lower Columbia River.

Deters, Katherine A.; Brown, Richard S.; Carter, Kathleen M.; Boyd, James W.

2009-02-27T23:59:59.000Z

439

Physical properties of erbium implanted tungsten oxide filmsdeposited by reactive dual magnetron sputtering  

SciTech Connect (OSTI)

Amorphous and partially crystalline WO3 thin films wereprepared by reactive dual magnetron sputtering and successively implantedby erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015ions/cm2. The electrical and optical properties were studied as afunction of the film deposition parameters and the ion fluence. Ionimplantation caused a strong decrease of the resistivity, a moderatedecrease of the index of refraction and a moderate increase of theextinction coefficient in the visible and near infrared, while theoptical band gap remained almost unchanged. These effects could belargely ascribed to ion-induced oxygen deficiency. When annealed in air,the already low resistivities of the implanted samples decreased furtherup to 70oC, whereas oxidation, and hence a strong increase of theresistivity, was observed at higher annealing temperatures.

Mohamed, Sodky H.; Anders, Andre

2006-11-08T23:59:59.000Z

440

An experiment on the dynamics of ion implantation and sputtering of surfaces  

SciTech Connect (OSTI)

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B. [Plasma Science and Fusion Center, MIT, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States)] [Plasma Science and Fusion Center, MIT, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States)

2014-02-15T23:59:59.000Z

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441

Remote Sensing and In-Situ Observations of Arctic Mixed-Phase and Cirrus Clouds Acquired During Mixed-Phase Arctic Cloud Experiment: Atmospheric Radiation Measurement Uninhabited Aerospace Vehicle Participation  

SciTech Connect (OSTI)

The Atmospheric Radiation Monitor (ARM) uninhabited aerospace vehicle (UAV) program aims to develop measurement techniques and instruments suitable for a new class of high altitude, long endurance UAVs while supporting the climate community with valuable data sets. Using the Scaled Composites Proteus aircraft, ARM UAV participated in Mixed-Phase Arctic Cloud Experiment (M-PACE), obtaining unique data to help understand the interaction of clouds with solar and infrared radiation. Many measurements obtained using the Proteus were coincident with in-situ observations made by the UND Citation. Data from M-PACE are needed to understand interactions between clouds, the atmosphere and ocean in the Arctic, critical interactions given large-scale models suggest enhanced warming compared to lower latitudes is occurring.

McFarquhar, G.M.; Freer, M.; Um, J.; McCoy, R.; Bolton, W.

2005-03-18T23:59:59.000Z

442

Effect of brachytherapy technique and patient characteristics on cervical cancer implant dosimetry  

SciTech Connect (OSTI)

Our purpose was to evaluate the relationship between brachytherapy technique and patient characteristics on dose to organs-at-risk (OARs) in patients undergoing high dose rate (HDR) brachytherapy for cervical cancer. From 1998 to 2008, 31 patients with cervical cancer with full dosimetric data were identified who received definitive external-beam radiation and HDR brachytherapy with tandem and ovoid applicators. Doses were recorded at point A, the International Commission on Radiation Units and Measurements (ICRU)-38 rectal point, the ICRU-38 bladder point, the vaginal surface, and the pelvic sidewall. Generalized estimating equations were used to determine the significance of changes in OAR to point A dose ratios with differences in brachytherapy technique or patient characteristics. Patients underwent a median of 5 brachytherapy procedures (range, 3 to 5), with a total of 179 procedures for 31 patients. For all brachytherapy treatments, the average ratios between the doses for the rectal, bladder, vaginal surface, and pelvic sidewall reference points to those at point A were 0.49, 0.59, 1.15, and 0.17, respectively. In general, decreased OAR dose was associated with a lower stage, younger age, increased ovoid size, increased tandem length, and earlier implant number. Increased tandem curvature significantly increased bladder dose and decreased rectal dose. Intravenous anesthesia usage was not correlated with improved dosimetry. This study allowed identification of patient and procedure characteristics influencing OAR dosing. Although the advent of 3-dimensional (3D) image-guided brachytherapy will bring new advances in treatment optimization, the actual technique involved at the time of the brachytherapy implant procedure will remain important.

Anker, Christopher J., E-mail: chris.anker@hci.utah.edu [Department of Radiation Oncology, Huntsman Cancer Hospital, University of Utah, Salt Lake City, UT (United States); O'Donnell, Kristen [Department of Radiation Oncology, The University of Arizona, Tucson, AZ (United States); Boucher, Kenneth M. [Department of Oncological Sciences, Huntsman Cancer Institute, University of Utah, Salt Lake City, UT (United States); Gaffney, David K. [Department of Radiation Oncology, Huntsman Cancer Hospital, University of Utah, Salt Lake City, UT (United States)

2013-01-01T23:59:59.000Z

443

Complications of Transfemoral Removal of Percutaneous Transfemorally Implanted Port-Catheter Systems  

SciTech Connect (OSTI)

Our purpose is to evaluate the feasibility and safety of the withdrawal procedure of percutaneous transfemorally implanted port-catheter systems. Thirty-seven patients (17.7%) underwent the withdrawal procedure of this port-catheter system among 209 patients. The reasons for withdrawal were as follows: termination of intra-arterial chemotherapy (n = 7), obstruction of hepatic artery (n = 5), port infection (n = 4), catheter infection (n = 4), catheter obstruction (n = 4), lower-limb palsy and pain (n = 2), exposure of the port due to skin defect (n = 2), patient's desire (n = 2), side effect of chemotherapy (n = 1), no effectiveness of chemotherapy (n = 1), hematoma at the puncture site (n = 1), duodenum perforation by the catheter (n = 1), intermittent claudication due to severe stenosis of right common iliac artery (n = 1), dissection of common hepatic artery (n = 1), and broken catheter (n = 1). In thirty-four of the 37 cases, the port-catheter system was successfully withdrawn without any complications. Clinical success rate was 91.9%. Complications occurred in three cases (8.1%), which were a pseudoaneurysm, thromboembolism of the right common iliac artery, and continuous bleeding from the subcutaneous pocket where the port system was placed for 1 month. In 15 cases, correction of the catheter tip or exchange for dislocation of the tip had to be done without withdrawal. It is not rare to withdraw port-catheter systems in cases of infection or hematoma around the system. Although withdrawal of a percutaneous transfemorally implanted port-catheter system is a relatively safe procedure, the port-catheter system should not be removed unless absolutely indicated.

Yahiro, Yoshiyuki; Toyota, Naoyuki, E-mail: naotoyo@hiroshima-u.ac.jp; Kakizawa, Hideaki; Hieda, Masashi; Hirai, Nobuhiko; Naito, Akira; Ito, Katsuhide [Programs for Applied Biomedicine, Graduate School of Biomedical Science, Hiroshima University, Department of Radiology, Division of Medical Intelligence and Informatics (Japan)

2006-10-15T23:59:59.000Z

444

Past Topics for the Ph.D. Preliminary Qualifying Examination 2002: Development of an Implant System to Treat Patent Foramen Ovale  

E-Print Network [OSTI]

to Treat Patent Foramen Ovale You have just taken a position as the head of research and development for a cardiovascular device company. They have been given a grant to develop an implantable system to treat patent

Berdichevsky, Victor

445

Introduction of the MC3-II/GP system, medium current ion implanter with enhanced multi-charge beam current  

SciTech Connect (OSTI)

The MC3-II/GP is a leading-edge single-wafer medium-current ion implanter, newly developed by SEN Corporation. It demonstrates exceptional productivity based on a high speed wafer-handling station and enhanced beam current. It covers a substantively wider energy range in order to fully meet advanced device requirements. Retaining the superior features of the MC3-II/WR, the MC3-II/GP provides a remarkable increase of multiply-charged beam current coupled with longer ion source lifetime. Another advanced feature of the MC3-II/GP is a 30 second or 14% reduction in auto beam setup time. These improvements enable a fabrication line to reduce the total number of ion implanters and dramatically reduce COO.

Koike, Masazumi; Sato, Fumiaki; Sano, Makoto; Kawatsu, Sho; Kariya, Hiroyuki; Kimura, Yasuhiko; Kudo, Tetsuya; Shiraishi, Miyuki; Shinozuka, Masamitsu; Takahashi, Yuji; Ishida, Yuji; Tsukihara, Mitsukuni; Ueno, Kazuyoshi; Sugitani, Michiro [SEN Corporation, 1501, Imazaike, Saijo, Ehime, 799-1362 (Japan)

2012-11-06T23:59:59.000Z

446

Process architectures using MeV implanted blanket buried layers for latch-up improvements on bulk silicon  

SciTech Connect (OSTI)

Doped buried layers formed by MeV ion implantation are attractive alternatives to expensive epitaxial substrates for controlling latch-up in CMOS devices. Two different process architecture approaches for forming effective buried layers are discussed. P+ Around Boundary (PAB), and a more recent derivative, BILLI are compared to a Buried Layer/Connecting Layer (BUCL) architecture, with regards to latch-up resistance, process flexibility, and future scalability. While both architectures have been shown to increase latch-up trigger current on bulk silicon, the BUCL process provides greater latch-up control and process/device flexibility. Process and device simulations as well as experimental data indicate that a properly chosen set of implants for both n-well, p-well, and buried layer structures can yield latch-up isolation superior to 3mm epi.

Rubin, L.M.; Simonton, R.B.; Wilson, S.D. [Eaton Corporation, Beverly, MA (United States); Morris, W. [Silicon Engineering, Austin, TX (United States)

1996-12-31T23:59:59.000Z

447

High power impulse magnetron sputtering and related discharges: scalable plasma sources for plasma-based ion implantation and deposition  

SciTech Connect (OSTI)

High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using `gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated.

Anders, Andre

2009-09-01T23:59:59.000Z

448

Plasma Immersion Ion Implantation with a 4kV/10kHz Compact High Voltage Pulser  

SciTech Connect (OSTI)

Development of a 4 kV/10 kHz Compact High Voltage Pulser and its application to nitrogen plasma immersion ion implantation (PIII) of different materials as Si, Al alloys, SS304 stainless steel and Ti alloys are discussed. Low voltage (1-5 kV) pulses at high frequencies (up to 20 kHz for 2 kV) were obtained with maximum power delivered at 5 kV, 7 kHz. These conditions were not sufficient to reach temperatures above 200 deg. C in the samples because of short duration of the pulses. However, very shallow implantations of nitrogen in Si, Al5052, SS304 were observed by Auger electron spectroscopy and improved corrosion resistance was obtained for Al5052 when it was treated by nitrogen PIII at 2.5 kV, 5{mu}s and 5 kHz pulses.

Ueda, M.; Oliveira, R. M.; Rossi, J. O. [Associated Laboratory of Plasma, National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos, Sao Paulo (Brazil); Reuther, H. [Institute of Ion Beam Physics and Materials Research, Rossendorf, Dresden (Germany); Silva, G. [Associated Laboratory of Plasma, National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos, Sao Paulo (Brazil); Department of Aeronautics and Mechanics, Technological Institute of Aeronautics, Sao Jose dos Campos, Sao Paulo (Brazil)

2006-11-13T23:59:59.000Z

449

Tunable photoluminescence of self-assembled GeSi quantum dots by B{sup +} implantation and rapid thermal annealing  

SciTech Connect (OSTI)

The layered GeSi quantum dots (QDs) are grown on (001) Si substrate by molecular beam epitaxy. The photoluminescence (PL) peak of the as-grown GeSi quantum dots has obvious blue shift and enhancement after processed by ion implantation and rapid thermal annealing. It is indicated that the blue shift is originated from the interdiffusion of Ge and Si at the interface between QDs and the surrounding matrix. The dependence of PL intensity on the excitation power shows that there are the nonradiative centers of shallow local energy levels from the point defects caused by the ion implantation, but not removed by the rapid thermal annealing. The tunable blue shift of the PL position from the 1300?nm to 1500?nm region may have significant application value in the optical communication.

Chen, Yulu; Wu, Shan; Ma, Yinjie; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Jiang, Zuimin [National Key Laboratory for Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)

2014-06-21T23:59:59.000Z

450

Wear Measurement of Highly Cross-linked UHMWPE using a 7Be Tracer Implantation Technique  

SciTech Connect (OSTI)

The very low wear rates achieved with the current highly cross-linked ultrahigh molecular weight polyethylenes (UHMWPE) used in joint prostheses have proven to be difficult to measure accurately by gravimetry. Tracer methods are there- fore being explored. The purpose of this study was to perform a proof-of-concept experiment on the use of the radioactive tracer beryllium-7 (7Be) for the determination of in vitro wear in a highly cross-linked orthopedic UHMWPE. Three cross-linked and four conventional UHMWPE pins made from compression- molded GUR 1050, were activated with 109 to 1010 7Be nuclei using a new implantation setup that produced a homogenous distribution of implanted nuclei up to 8.5 lm below the surface. The pins were tested for wear in a six-station pin-on-flat appara- tus for up to 7.1 million cycles (178 km). A Germanium gamma detector was employed to determine activity loss of the UHMWPE pins at preset intervals during the wear test. The wear of the cross-linked UHMWPE pins was readily detected and esti- mated to be 17 6 3 lg per million cycles. The conventional-to- cross-linked ratio of the wear rates was 13.1 6 0.8, in the expected range for these materials. Oxidative degradation dam- age from implantation was negligible; however, a weak depend- ence of wear on implantation dose was observed limiting the number of radioactive tracer atoms that can be introduced. Future applications of this tracer technology may include the analysis of location-specific wear, such as loss of material in the post or backside of a tibial insert.

Wimmer, Markus A. [Rush Uniiv. Medical Center; Laurent, Michael P. [Rush Univ. Medical Center; Dwivedi, Yasha [Rush Univ. Medical Center; Gallardo, Luis A. [Rush Univ. Medical Center; Chipps, K. [Colorado School of Mines, Golden; Blackmon, Jeffery C [Louisiana State University; Kozub, R. L. [Tennessee Technological University; Bardayan, Daniel W [ORNL; Gross, Carl J [ORNL; Stracener, Daniel W [ORNL; Smith, Michael Scott [ORNL; Nesaraja, Caroline D [ORNL; Erikson, Luke [Colorado School of Mines, Golden; Patel, Nidhi [Colorado School of Mines, Golden; Rehm, Karl E. [Argonne National Laboratory (ANL); Ahmad, Irshad [Argonne National Laboratory (ANL); Greene, John P. [Argonne National Laboratory (ANL); Greife, Uwe [Colorado School of Mines, Golden

2013-01-01T23:59:59.000Z

451

Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium  

DOE Patents [OSTI]

A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

Holland, Orin W. (Oak Ridge, TN); Fathy, Dariush (Knoxville, TN); White, Clark W. (Oak Ridge, TN)

1990-04-24T23:59:59.000Z

452

dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel  

SciTech Connect (OSTI)

Field-emission studies have been performed on a GaAs wafer and a sample of its stainless-steel (SS) support electrode that are part of a photocathode gun for the 10 kW Upgrade infrared free electron laser at Jefferson Lab. The objective of the studies presented here is to characterize the effect of both the cleanliness of the wafer and the plasma-source ion-implanted layer on the electrode to suppress field emission. Field emission is the limiting factor to achieve the required 6 MV/m at the surface of the wafer. Potential field emitters are first located on the surface of 1 in. diameter samples with a dc scanning field-emission microscope at 60 MV/m, then each emitter is characterized in a scanning electron microscope equipped with an energy dispersive spectrometer. The GaAs wafer was hydrogen cleaned before the study. The results show three emitters caused by indium contamination during wafer handling. The GaAs wafer thus shows good high-voltage characteristics and the need to maintain cleanliness during handling. The SS sample is hand polished with diamond paste to a 1-m surface finish, then implanted with N2/SiO2 in a plasma-source ion-implantation chamber in preparation for the field-emission studies.

C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

2003-06-01T23:59:59.000Z

453

Performance Assessment of Suture Type, Water Temperature, and Surgeon Skill in Juvenile Chinook Salmon Surgically Implanted with Acoustic Transmitters  

SciTech Connect (OSTI)

Size reductions of acoustic transmitters implanted in migrating juvenile salmonids have resulted in the use of a shorter incision - one that may warrant only one suture for closure. However, it is not known if a single suture will sufficiently hold the incision closed when fish are decompressed and outward pressure is placed on the surgical site during passage of hydroelectric dams. The objectives of this study were to evaluate five response variables in juvenile Chinook salmon subjected to simulated turbine passage. Fish were implanted with an acoustic transmitter (0.43 g in air) and a passive integrated transponder tag (0.10 g in air); incisions (6 mm) were closed with either one or two sutures. Following exposure, no transmitters were expelled. In addition, suture and incision tearing and mortal injury did not differ between treatment and control fish. Viscera expulsion was higher in treatment (12%) than control (1%) fish. The higher incidence of viscera expulsion through single-suture incisions warrants concern. Consequently, the authors do not recommend using one suture to close 6-mm incisions associated with acoustic transmitter implantation when juvenile salmonids may be exposed to turbine passage.

Deters, Katherine A.; Brown, Richard S.; Carter, Kathleen M.; Boyd, James W.; Eppard, M. B.; Seaburg, Adam

2010-08-01T23:59:59.000Z

454

Elastic Deformation Properties of Implanted Endobronchial Wire Stents in Benign and Malignant Bronchial Disease: A Radiographic In Vivo Evaluation  

SciTech Connect (OSTI)

Purpose: To evaluate the long-term mechanical behavior in vivo of expandable endobronchial wire stents, we imaged three different prostheses in the treatment of tracheobronchial disease. Methods: Six patients with bronchial stenoses (three benign, three malignant) underwent insertion of metallic stents. Two self-expandable Wallstents, two balloon-expandable tantalum Strecker stents and two self-expandable nitinol Accuflex stents were used. Measurements of deformation properties were performed during voluntary cough by means of fluoroscopy, at 1 month and 7-10 months after implantation. The procedures were videotaped, their images digitized and the narrowing of stent diameters calculated at intervals of 20 msec. Results: After stent implantation all patients improved with respect to ventilatory function. Radial stent narrowing during cough reached 53% (Wallstent), 59% (tantalum Strecker stent), and 52% (nitinol Accuflex stent) of the relaxed post-implantation diameter. Stent compression was more marked in benign compared with malignant stenoses. In the long term permanent deformation occurred with the tantalum Strecker stents; the other stents were unchanged. Conclusion: Endobronchial wire stents can be helpful in the treatment of major airway collapse and obstructing bronchial lesions. However, evidence of material fatigue as a possible effect of exposure to recurrent mechanical stress on the flexible mesh tube may limit their long-term use. This seems to be predominantly important in benign bronchial collapse.

Hautmann, Hubert [Medizinische Klinik, Klinikum Innenstadt, Ludwig-Maximilians-University, Ziemssentrasse 1, D-80336 Munich (Germany); Rieger, Johannes [Radiologische Klinik, Klinikum Innenstadt, Ludwig-Maximilians-University, Ziemssentrasse 1, D-80336 Munich (Germany); Huber, Rudolf M. [Medizinische Klinik, Klinikum Innenstadt, Ludwig-Maximilians-University, Ziemssentrasse 1, D-80336 Munich (Germany); Pfeifer, Klaus J. [Radiologische Klinik, Klinikum Innenstadt, Ludwig-Maximilians-University, Ziemssentrasse 1, D-80336 Munich (Germany)

1999-03-15T23:59:59.000Z

455

Binding of copper and nickel to cavities in silicon formed by helium ion implantation  

SciTech Connect (OSTI)

Cavities formed in Si by He ion implantation and annealing are shown to be strong traps for Cu and Ni impurities. Experiments utilizing ion-beam analysis and transmission electron microscopy indicate that Cu is trapped at the internal surfaces of cavities up to {approximately}1 monolayer coverage with a binding energy of 2.2{plus_minus}0.2 eV relative to solution. This is greater than the heat of solution from the precipitated Cu{sub 3}Si phase, determined to be 1.7 eV in agreement with earlier work. Copper at cavity-wall sites is reversibly replaced by H during heating in H{sub 2} gas, indicating the relative stability of the two surface terminations. Initial results for Ni impurities indicate that trapping at cavities is again energetically preferred to silicide formation. The saturation coverage of Ni on the internal surfaces, however, is an order of magnitude smaller for Ni than Cu, consistent with published studies of external-surface adsorption. These results suggest that cavity trapping may getter metallic impurities in Si more effectively than methods based on silicide precipitation.

Myers, S.M.; Follstaedt, D.M.; Bishop, D.M.

1993-12-01T23:59:59.000Z

456

Surface studies and implanted helium measurements following NOVA high-yield DT experiments  

SciTech Connect (OSTI)

This paper presents the results of three March 6, 1996 direct-drive high-yield DT NOVA experiments and provides `proof-of-principal` results for the quantitative measurement of energetic He ions. Semiconductor quality Si wafers and an amorphous carbon wafer were exposed to NOVA high-yield implosions. Surface damage was sub-micron in general, although the surface ablation was slightly greater for the carbon wafer than for the Si wafers. Melting of a thin ({approx} 0.1{mu}) layer of Si was evident from microscopic investigation. Electron microscopy indicated melted blobs of many different metals (e.g. Al, Au, Ta, Fe alloys, Cu and even Cd) on the surfaces. The yield measured by determining the numbers of atoms of implanted {sup 4}He and {sup 3}He indicate the number of DT fusions to be 9.1({plus_minus}2.3) X 10{sup 12} and DD fusions to be 4.8({plus_minus}1.0) x 10{sup 10}, respectively. The helium DT fusion yield is slightly lower than that of the Cu activation measurement, which was 1.3({plus_minus}0.l) x 10{sup 13} DT fusions.

Stoyer, M.A.; Hudson, G.B.

1997-02-18T23:59:59.000Z

457

Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires  

SciTech Connect (OSTI)

We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (?0.0001%) exhibit a low resistance of a few k? at 300?K and a 4% positive MR at 1.6?K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M? at 300?K and a large negative MR of 85% at 1.6?K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga{sub 1?x}Mn{sub x}As nanowires for future nanospintronics.

Paschoal, W.; Kumar, Sandeep; Jain, V.; Pettersson, H., E-mail: hakan.pettersson@hh.se [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Department of Mathematics, Physics and Electrical Engineering, Halmstad University, Box 823, SE-301 18, Halmstad (Sweden); Jacobsson, D.; Samuelson, L. [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Johannes, A.; Ronning, C. [Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Canali, C. M.; Pertsova, A. [Department of Physics and Electrical Engineering, Linneaus University, SE-39233 Kalmar (Sweden); Dick, K. A. [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Center for Analysis and Synthesis, Lund University, Box 124, S-221 00 Lund (Sweden)

2014-04-14T23:59:59.000Z

458

Beam dynamics of a double-gap acceleration cell for ion implantation with multiple atomic species  

SciTech Connect (OSTI)

As a result of our work on ion implantation, we derived equations for the beam dynamics of a two-gap-resonator cavity for accelerating and bunching various ion species of varying energies with the cavity designed for one particular ion species of a given energy (the design-reference particle). A two gap structure is useful at low resonant frequencies where lumped circuit elements (inductors) can be used and the structure kept small. A single gap structure has the advantage that each gap can be independently phased to produce the desired beam dynamics behavior for various ion species and ion energies. However at low frequencies, single gap resonant structures can be large. We find that the two-gap structure, where the phase difference between gaps, for the design reference particle, is fixed at {pi} radians can give acceptable performance provided that the individual two gap cells in the entire accelerator are optimized for the ion species having the largest mass to charge ratio and having the maximum required output energy. Our equations show how to adjust the cavity phases and electric fields to obtain equivalent first-order accelerator performance for various ion species and energies. These equations allow for the effective evaluation of various accelerator concepts and can facilitate the tuning of a linac when changing energies and ion species. Extensive simulations have confirmed the efficacy of our equations. {copyright} {ital 1997 American Institute of Physics.}

Wadlinger, E.A.; Lysenko, W.P.; Rusnak, B. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Saadatmand, K. [Eaton Corporation, Semiconductor Equipment Operation, 108 Cherry Hill Drive, Beverly, Massachusetts 01915 (United States)

1997-02-01T23:59:59.000Z

459

Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide  

SciTech Connect (OSTI)

As a candidate material for fusion reactor applications, silicon carbide (SiC) undergoes transmutation reactions under high-energy neutron irradiation with magnesium as the major metallic transmutant; the others include aluminum, beryllium and phosphorus in addition to helium and hydrogen gaseous species. The impact of these transmutants on SiC structural stability is currently unknown. This study uses ion implantation to introduce Mg into SiC. Multiaxial ion-channeling analysis of the as-produced damage state suggests that there are preferred Si <100> interstitial splits. The microstructure of the annealed sample was examined using high-resolution scanning transmission electron microscopy. The results show a high concentration of likely non-faulted tetrahedral voids and possible stacking fault tetrahedra near the damage peak. In addition to lattice distortion, dislocations and intrinsic and extrinsic stacking faults are also observed. Magnesium in 3C-SiC prefers to substitute for Si and it forms precipitates of cubic Mg2Si and tetragonal MgC2. The diffusion coefficient of Mg in 3C-SiC single crystal at 1573 K has been determined to be 3.80.410e-19 m2/sec.

Jiang, Weilin; Jung, Hee Joon; Kovarik, Libor; Wang, Zhaoying; Roosendaal, Timothy J.; Zhu, Zihua; Edwards, Danny J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

2015-01-01T23:59:59.000Z

460

Overview of UIUC's Concrete Cross-tie and Fastening System Laboratory Study  

E-Print Network [OSTI]

Instrumentation plan overview Preliminary laboratory test Built up load cell feasibility study Partial the flow of forces Lab-Field Develop field instrumentation plan Develop test load conditions Lab measurement (strain gauges) Deflection measurement (LVDT/potentiometers) Load transfer measurement (load

Barkan, Christopher P.L.

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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461

A study of the relationship between applied and effective torque on screw fastenings  

E-Print Network [OSTI]

from a nutrunner oould be very small and still result in a muoh larger variation of effeotive torque due to the other factors. This is ths problem which manufacturers of these types of air tools face and this research is devoted toward developing... the effeotive torque, Kany applied torque measuring instruments are some form of a transmission dynamometer (5) (6) (7) (8). This type of measuring devioe "may be desoribed as an instrument which is interposed between a prime mover and the apparatus which...

Lewis, Robert Miller

1959-01-01T23:59:59.000Z

462

ALL GRADE 5 AND GRADE 8 FASTENERS WHICH DO NOT BEAR ANY MANUFACTURERS'  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergy Cooperation |South Valley ResponsibleSubmissionofDepartmentNo.7-052 of 5) ALARA Training4ALL

463

Cluster size effects on sintering, CO adsorption, and implantation in Ir/SiO{sub 2}  

SciTech Connect (OSTI)

A series of planar model catalysts have been prepared via deposition of Ir{sub n}{sup +} on thermally grown amorphous SiO{sub 2}/Si(100) and ion scattering spectroscopy was used to probe surface structure as a function of cluster size, impact energy, and surface temperature. Deposition of Ir{sub 2} or Ir{sub 10} at low energies and room temperature results in stable clusters forming one- or two-dimensional single layer islands on the oxide surface. Heating the samples to 750 K leads to agglomeration, forming multilayer structures on the surface. Ir{sub 1} deposited under similar conditions sinters into large clusters at room temperature. Deposition at 110 K at least partially stabilizes the Ir atoms with respect to diffusion and sintering. At higher deposition energies, partial implantation into the surface is observed, but this appears to be insufficient to stabilize the clusters against sintering at elevated temperature. At low temperatures, substrate-mediated adsorption of CO is found to be highly efficient, leading to near saturation coverages of CO bound atop the Ir{sub n} clusters. The CO can be removed by careful He{sup +} sputtering. The deposition/binding behavior of Ir{sub n} on SiO{sub 2} is quite different from Ir{sub n}/TiO{sub 2}(110), for which the clusters bind in three-dimensional morphology, starting at Ir{sub 5}. That system also shows substrate-mediated adsorption of CO, but the CO preferentially binds at the periphery of the clusters rather than on top.

Kaden, W. E.; Kunkel, W. A.; Anderson, Scott L. [Department of Chemistry, University of Utah, 315 S. 1400 E. RM 2020, Salt Lake City, Utah 84112-0850 (United States)

2009-09-21T23:59:59.000Z

464

An implantable instrument for studying the long-term flight biology of migratory birds  

SciTech Connect (OSTI)

The design of an instrument deployed in a project studying the high altitude Himalayan migrations of bar-headed geese (Anser indicus) is described. The electronics of this archival datalogger measured 22 14 6.5 mm, weighed 3 g, was powered by a AA-sized battery weighing 10 g and housed in a transparent biocompatible tube sealed with titanium electrodes for electrocardiography (ECG). The combined weight of 32 g represented less than 2% of the typical bodyweight of the geese. The primary tasks of the instrument were to continuously record a digitised ECG signal for heart-rate determination and store 12-bit triaxial accelerations sampled at 100 Hz with 15% coverage over each 2 min period. Measurement of atmospheric pressure provided an indication of altitude and rate of ascent or descent during flight. Geomagnetic field readings allowed for latitude estimation. These parameters were logged twice per minute along with body temperature. Data were stored to a memory card of 8 GB capacity. Instruments were implanted in geese captured on Mongolian lakes during the breeding season when the birds are temporarily flightless due to moulting. The goal was to collect data over a ten month period, covering both southward and northward migrations. This imposed extreme constraints on the design's power consumption. Raw ECG can be post-processed to obtain heart-rate, allowing improved rejection of signal interference due to strenuous activity of locomotory muscles during flight. Accelerometry can be used to monitor wing-beat frequency and body kinematics, and since the geese continued to flap their wings continuously even during rather steep descents, act as a proxy for biomechanical power. The instrument enables detailed investigation of the challenges faced by the geese during these arduous migrations which typically involve flying at extreme altitudes through cold, low density air where oxygen availability is significantly reduced compared to sea level.

Spivey, Robin J., E-mail: r.spivey@bangor.ac.uk, E-mail: c.bishop@bangor.ac.uk; Bishop, Charles M., E-mail: r.spivey@bangor.ac.uk, E-mail: c.bishop@bangor.ac.uk [Department of Biological Sciences, Bangor University, Gwynedd LL57 2UW (United Kingdom)

2014-01-15T23:59:59.000Z

465

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting  

SciTech Connect (OSTI)

We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown. Fits to the concentration-depth profile are used to estimate the diffusive speeds, v{sub D,} of Au and Zn, and put lower bounds on v{sub D} of the other metals ranging from 10{sup 2} to 10{sup 4} m/s. Knowledge of v{sub D} is used to tailor the irradiation conditions and synthesize single-crystal Si supersaturated with 10{sup 19} Au/cm{sup 3} without cellular breakdown. Values of v{sub D} are compared to those for other elements in Si. Two independent thermophysical properties, the solute diffusivity at the melting temperature, D{sub s}(T{sub m}), and the equilibrium partition coefficient, k{sub e}, are shown to simultaneously affect v{sub D}. We demonstrate a correlation between v{sub D} and the ratio D{sub s}(T{sub m})/k{sub e}{sup 0.67}, which is exhibited for Group III, IV, and V solutes but not for the transition metals investigated. Nevertheless, comparison with experimental results suggests that D{sub s}(T{sub m})/k{sub e}{sup 0.67} might serve as a metric for evaluating the potential to supersaturate Si with transition metals by PLM.

Recht, Daniel; Aziz, Michael J. [Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138 (United States)] [Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138 (United States); Smith, Matthew J.; Grade?ak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)] [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Charnvanichborikarn, Supakit; Williams, James S. [Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia)] [Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Sullivan, Joseph T.; Winkler, Mark T.; Buonassisi, Tonio [Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge Massachusetts 02139 (United States)] [Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge Massachusetts 02139 (United States); Mathews, Jay; Warrender, Jeffrey M. [Benet Laboratories, U.S. Army ARDEC, Watervliet, New York 12189 (United States)] [Benet Laboratories, U.S. Army ARDEC, Watervliet, New York 12189 (United States)

2013-09-28T23:59:59.000Z

466

Recoil-Implantation Of Multiple Radioisotopes Towards Wear Rate Measurements And Particle Tracing In Prosthetic Joints  

SciTech Connect (OSTI)

This study demonstrates a new method of radioisotope labeling of ultra-high molecular weight polyethylene inserts in prosthetic joints for wear studies. The radioisotopes {sup 97}Ru, {sup 100}Pd, {sup 100}Rh, and {sup 101m}Rh are produced in fusion evaporation reactions induced by {sup 12}C ions in a {sup 92}Zr target foil. The fusion products recoil-implant into ultra-high molecular weight polyethylene plugs, machined to fit into the surface of the inserts. During laboratory simulations of the joint motion, a wear rate of the labeled polyethylene may be measured and the pathways of wear debris particles can be traced by detecting characteristic gamma-rays. The concentration profiles of the radioisotopes extend effectively uniformly from the polyethylene surface to a depth of about 4 {mu}m. The multiplicity of labeling and the use of several gamma-ray lines aids with avoiding systematic measurement uncertainties. Two polyethylene plugs were labeled and one was fitted into the surface of the tibial insert of a knee prosthesis, which had been worn in. Actuation over close to 100,000 cycles with a 900 N axial load and a 24 deg. flexion angle removed (14{+-}1)% of the gamma-ray activity from the plug. Most of this activity dispersed into the serum lubricant identifying this as the important debris pathway. Less than 1% activity was transferred to the femoral component of the prosthesis and the measured activity on the tibial tray was insignificant. Assuming uniform wear across the superior surface of the insert, a wear rate of (12{+-}3) mm{sup 3}/Megacycle was determined. This is consistent with wear rate measurements under similar conditions using other techniques.

Warner, Jacob A.; Timmers, Heiko [School of Physical, Environmental and Mathematical Sciences, University of New South Wales at ADFA, Canberra, ACT 2600 (Australia); Smith, Paul N.; Scarvell, Jennifer M. [Trauma and Orthopaedic Research Unit, Canberra Hospital, PO BOX 11, Woden, ACT 2606 (Australia); Gladkis, Laura [School of Physical, Environmental and Mathematical Sciences, University of New South Wales at ADFA, Canberra, ACT 2600 (Australia); Trauma and Orthopaedic Research Unit, Canberra Hospital, PO BOX 11, Woden, ACT 2606 (Australia)

2011-06-01T23:59:59.000Z

467

Reduction of transient diffusion from 1{endash}5 keV Si{sup +} ion implantation due to surface annihilation of interstitials  

SciTech Connect (OSTI)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1{times}10{sup 14} cm{sup {minus}2} Si{sup +} was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050{degree}C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si{sup +} ion range is observed at all temperatures, extrapolating to {approximately}1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of {lt}10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n junction formation, TED is reduced at smaller ion implantation energies and that this is due to increased interstitial annihilation at the surface. {copyright} {ital 1997 American Institute of Physics.}

Agarwal, A.; Gossmann, H.-.; Eaglesham, D.J.; Pelaz, L.; Jacobson, D.C. [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States); Haynes, T.E. [Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)] [Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States); Erokhin, Y.E. [Eaton Corporation, 108 Cherry Hill Drive, Beverly, Massachusetts 01950 (United States)] [Eaton Corporation, 108 Cherry Hill Drive, Beverly, Massachusetts 01950 (United States)

1997-11-01T23:59:59.000Z

468

Determine the Influence of Time Held in Knockdown Anesthesia on Survival and Stress of Surgically Implanted Juvenile Salmonids  

SciTech Connect (OSTI)

The Juvenile Salmon Acoustic Telemetry System (JSATS) was developed for the U.S. Army Corp of Engineers Portland District (USACE) to address questions related to survival and performance measures of juvenile salmonids as they pass through the Federal Columbia River Power System (FCRPS). Researchers using JSATS acoustic transmitters (ATs) were tasked with standardizing the surgical implantation procedure to ensure that the stressors of handling and surgery on salmonids were consistent and less likely to cause effects of tagging in survival studies. Researchers questioned whether the exposure time in 'knockdown' anesthesia (or induction) to prepare fish for surgery could influence the survival of study fish (CBSPSC 2011). Currently, fish are held in knockdown anesthesia after they reach Stage 4 anesthesia until the completion of the surgical implantation of a transmitter, varies from 5 to 15 minutes for studies conducted in the Columbia Basin. The Columbia Basin Surgical Protocol Steering Committee (CBSPSC ) expressed concern that its currently recommended 10-minute maximum time limit during which fish are held in anesthetic - tricaine methanesulfonate (MS-222, 80 mg L-1 water) - could increase behavioral and physiological costs, and/or decrease survival of outmigrating juvenile salmonids. In addition, the variability in the time fish are held at Stage 4 could affect the data intended for direct comparison of fish within or among survival studies. Under the current recommended protocol, if fish exceed the 10-minute time limit, they are to be released without surgical implantation, thereby increasing the number of fish handled and endangered species 'take' at the bypass systems for FCRPS survival studies.

Woodley, Christa M.; Wagner, Katie A.; Knox, Kasey M.

2012-01-31T23:59:59.000Z

469

Development of a low energy ion implantation system for the synthesis of GeXSi1-X alloys  

E-Print Network [OSTI]

traveling at a chosen speed v . The velocity of the particle is given by +2qV where V is the accelerating voltage or beam energy, M is the ion mass, and q is the ion charge. The magnetic force is given by F~ =Bqv, (2) where B is the magnetic field... to 160 keV was used to analyze the implant profiles. The design of the accelerator facility allows for in situ analysis of the target with 280 keV alpha particles by incorporating both beamlines into a common ultra high vacuum target chamber...

Court, John David

2012-06-07T23:59:59.000Z

470

Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering  

DOE Patents [OSTI]

A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.

Gruen, Dieter M. (Downers Grove, IL); Krauss, Alan R. (Naperville, IL); Siskind, Barry (Downers Grove, IL)

1981-01-01T23:59:59.000Z

471

{l_brace}311{r_brace} Defects in ion-implanted silicon: The cause of transient diffusion, and a mechanism for dislocation formation  

SciTech Connect (OSTI)

Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how {l_brace}311{r_brace} defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe {l_brace}311{r_brace} defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of carbon impurities.

Eaglesham, D.J.; Stolk, P.A.; Cheng, J.Y.; Gossmann, H.J.; Poate, J.M. [AT and T Bell Labs., Murray Hill, NJ (United States); Haynes, T.E. [Oak Ridge National Lab., TN (United States). Solid State Div.

1995-04-01T23:59:59.000Z

472

Synthesis of few-layered graphene by ion implantation of carbon in nickel thin films This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network [OSTI]

Synthesis of few-layered graphene by ion implantation of carbon in nickel thin films This article.1088/0957-4484/22/8/085601 Synthesis of few-layered graphene by ion implantation of carbon in nickel thin films Laurent Baraton1 SiC substrates [6]. More recently, the epitaxial growth of graphene films on monocrystalline

Boyer, Edmond

473

Training considerations for the intracoelomic implantation of electronic tags in fish with a summary of common surgical errors  

SciTech Connect (OSTI)

Training is a fundamental part of all scientific and technical disciplines. This is particularly true for all types of surgeons. For surgical procedures, a number of skills are necessary to reduce mistakes. Trainees must learn an extensive yet standardized set of problem-solving and technical skills to handle challenges as they arise. There are currently no guidelines or consistent training methods for those intending to implant electronic tags in fish; this is surprising, considering documented cases of negative consequences of fish surgeries and information from studies having empirically tested fish surgical techniques. Learning how to do fish surgery once is insufficient for ensuring the maintenance or improvement of surgical skill. Assessment of surgical skills is rarely incorporated into training, and is needed. Evaluation provides useful feedback that guides future learning, fosters habits of self-reflection and self-remediation, and promotes access to advanced training. Veterinary professionals should be involved in aspects of training to monitor basic surgical principles. We identified attributes related to knowledge, understanding, and skill that surgeons must demonstrate prior to performing fish surgery including a hands-on assessment using live fish. Included is a summary of common problems encountered by fish surgeons. We conclude by presenting core competencies that should be required as well as outlining a 3-day curriculum for training surgeons to conduct intracoelomic implantation of electronic tags. This curriculum could be offered through professional fisheries societies as professional development courses.

Cooke, Steven J.; Wagner, Glenn N.; Brown, Richard S.; Deters, Katherine A.

2011-01-01T23:59:59.000Z

474

Does UV disinfection compromise sutures? An evaluation of tissue response and suture retention in salmon surgically implanted with transmitters  

SciTech Connect (OSTI)

Ultraviolet radiation (UVR) can be used as a tool to disinfect surgery tools used for implanting transmitters into fish. However, the use of UVR could possibly degrade monofilament suture material used to close surgical incisions. This research examined the effect of UVR on monofilament sutures to determine if they were compromised and negatively influenced tag and suture retention, incision openness, or tissue reaction. Eighty juvenile Chinook salmon Oncorhynchus tshawytscha were surgically implanted with an acoustic transmitter and a passive integrated transponder. The incision was closed with a single stitch of either a suture exposed to 20 doses of UV radiation (5 minute duration per dose) or a new, sterile suture. Fish were then held for 28 d and examined under a microscope at day 7, 14, 21 and 28 for incision openness, ulceration, redness, and the presence of water mold. There was no significant difference between treatments for incision openness, redness, ulceration or the presence of water mold on any examination day. On day 28 post-surgery, there were no lost sutures; however, 2 fish lost their transmitters (one from each treatment). The results of this study do not show any differences in negative influences such as tissue response, suture retention or tag retention between a new sterile suture and a suture disinfected with UVR.

Walker, Ricardo W.; Brown, Richard S.; Deters, Katherine A.; Eppard, M. B.; Cooke, Steven J.

2013-10-01T23:59:59.000Z

475

low Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers  

E-Print Network [OSTI]

metals and silicide layers, in conjunction with rapid thermal annealing (RTA) to complete metal silicides and it forms uniform thin films on Si. Most of the current research involving salicide+ implantation through Ti metal (ITM) and TiSi, (ITS) layers, followed by rapid thermal annealing (RTA), has been

Steckl, Andrew J.

476

Bio-inspired Electronics for Interfacing Artificial Implants to Living Systems Imagine a world in which damaged parts of the body -an arm, or an eye, or even  

E-Print Network [OSTI]

in which damaged parts of the body - an arm, or an eye, or even a region of the brain ­ can be replaced. For example, in eye implants designed to restore vision to victims of retinal diseases, less than 10 percent

Taylor, Richard

477

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 9, SEPTEMBER 2006 2407 SiGe HBT Without Selectively Implanted Collector (SIC)  

E-Print Network [OSTI]

Selectively Implanted Collector (SIC) Exhibiting fmax = 310 GHz and BVCEO = 2 V Jae-Sung Rieh, Marwan Khater peak fmax of 310 GHz at the collector-current density of 7 mA/m2 and BVCEO of 2 V, are reported behind the speed enhancement has been the continuous vertical scaling of the device structure. Collector

Rieh, Jae-Sung

478

Gold nanoparticle formation in diamond-like carbon using two different methods: Gold ion implantation and co-deposition of gold and carbon  

SciTech Connect (OSTI)

We describe work in which gold nanoparticles were formed in diamond-like carbon (DLC), thereby generating a Au-DLC nanocomposite. A high-quality, hydrogen-free DLC thin film was formed by filtered vacuum arc plasma deposition, into which gold nanoparticles were introduced using two different methods. The first method was gold ion implantation into the DLC film at a number of decreasing ion energies, distributing the gold over a controllable depth range within the DLC. The second method was co-deposition of gold and carbon, using two separate vacuum arc plasma guns with suitably interleaved repetitive pulsing. Transmission electron microscope images show that the size of the gold nanoparticles obtained by ion implantation is 3-5 nm. For the Au-DLC composite obtained by co-deposition, there were two different nanoparticle sizes, most about 2 nm with some 6-7 nm. Raman spectroscopy indicates that the implanted sample contains a smaller fraction of sp{sup 3} bonding for the DLC, demonstrating that some sp{sup 3} bonds are destroyed by the gold implantation.

Salvadori, M. C.; Teixeira, F. S.; Araujo, W. W. R.; Sgubin, L. G.; Cattani, M. [Institute of Physics, University of Sao Paulo, CP 66318, CEP 05315-970 Sao Paulo, SP (Brazil); Spirin, R. E. [Polytechnic School, University of Sao Paulo, CEP 05508-900 Sao Paulo (Brazil); Brown, I. G. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-10-01T23:59:59.000Z

479

Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes  

SciTech Connect (OSTI)

We report on the effects of the As/P intermixing induced by phosphorus ion implantation in InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For nonintermixed QDas, usual temperature-dependent PL properties characterized by a monotonic redshift in the emission band and a continual broadening of the PL linewidth as the temperature increases, are observed. For intermediate ion implantation doses, the inhomogeneous intermixing enhances the QDas size dispersion and the enlarged distribution of carrier confining potential depths strongly affects the temperature-dependent PL properties below 180 K. An important redshift in the PL emission band occurs between 10 and 180 K which is explained by a redistribution of carriers among the different intermixed QDas of the ensemble. For higher implantation doses, the homogeneous intermixing reduces the broadening of the localized QDas state distribution and the measured linewidth temperature behavior matches that of the nonintermixed QDas. An anomalous temperature-dependent emission energy behavior has been observed for extremely high implantation doses, which is interpreted by a possible QDas dissolution.

Hadj Alouane, M. H.; Ilahi, B.; Maaref, H. [Laboratoire de Micro-Optoelectronique et Nanostructures (LMON), Faculte des Sciences, Avenue de l'environnement, 5019 Monastir (Tunisia); Salem, B.; Aimez, V.; Morris, D. [Centre de Recherche en Nanofabrication et Nanocaracterisation (CRN2), Universite de Sherbrooke, (Quebec) J1K 2R1 (Canada); Turala, A.; Regreny, P.; Gendry, M. [Institut des Nanotechnologies de Lyon (INL), UMR CNRS 5270, Universite de Lyon, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully (France)

2010-07-15T23:59:59.000Z

480

In vivo corrosion, tumor outcome, and microarray gene expression for two types of muscle-implanted tungsten alloys  

SciTech Connect (OSTI)

Tungsten alloys are composed of tungsten microparticles embedded in a solid matrix of transition metals such as nickel, cobalt, or iron. To understand the toxicology of these alloys, male F344 rats were intramuscularly implanted with pellets of tungsten/nickel/cobalt, tungsten/nickel/iron, or pure tungsten, with tantalum pellets as a negative control. Between 6 and 12 months, aggressive rhabdomyosarcomas formed around tungsten/nickel/cobalt pellets, while those of tungsten/nickel/iron or pure tungsten did not cause cancers. Electron microscopy showed a progressive corrosion of the matrix phase of tungsten/nickel/cobalt pellets over 6 months, accompanied by high urinary concentrations of nickel and cobalt. In contrast, non-carcinogenic tungsten/nickel/iron pellets were minimally corroded and urinary metals were low; these pellets having developed a surface oxide layer in vivo that may have restricted the mobilization of carcinogenic nickel. Microarray analysis of tumors revealed large changes in gene expression compared with normal muscle, with biological processes involving the cell cycle significantly up?regulated and those involved with muscle development and differentiation significantly down?regulated. Top KEGG pathways disrupted were adherens junction, p53 signaling, and the cell cycle. Chromosomal enrichment analysis of genes showed a highly significant impact at cytoband 7q22 (chromosome 7) which included mouse double minute (MDM2) and cyclin?dependant kinase (CDK4) as well as other genes associated with human sarcomas. In conclusion, the tumorigenic potential of implanted tungsten alloys is related to mobilization of carcinogenic metals nickel and cobalt from corroding pellets, while gene expression changes in the consequent tumors are similar to radiation induced animal sarcomas as well as sporadic human sarcomas. -- Highlights: ? Tungsten/nickel/cobalt, tungsten/nickel/iron, and pure tungsten were studied. ? Male Fischer rats implanted with pellets in gastrocnemius muscle of each hind leg. ? Aggressive rhabdomyosarcomas developed from tungsten/nickel/cobalt pellets only. ? Microarray gene expression analysis was carried out on selected tumors. ? Pellet degradation, urinary metal concentration, and sarcoma were correlated.

Schuster, B.E. [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, B434 Mulberry Road, Aberdeen Proving Ground, MD 21005-5609 (United States)] [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, B434 Mulberry Road, Aberdeen Proving Ground, MD 21005-5609 (United States); Roszell, L.E. [U.S. Army Institute of Public Health, 5158 Blackhawk Road, Aberdeen Proving Ground, MD 21010?5403 (United States)] [U.S. Army Institute of Public Health, 5158 Blackhawk Road, Aberdeen Proving Ground, MD 21010?5403 (United States); Murr, L.E.; Ramirez, D.A. [Department of Metallurgical and Materials Engineering, University of Texas, El Paso, TX 79968 (United States)] [Department of Metallurgical and Materials Engineering, University of Texas, El Paso, TX 79968 (United States); Demaree, J.D. [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, B434 Mulberry Road, Aberdeen Proving Ground, MD 21005-5609 (United States)] [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, B434 Mulberry Road, Aberdeen Proving Ground, MD 21005-5609 (United States); Klotz, B.R. [Dynamic Science Inc., Aberdeen Proving Ground, MD 21005?5609 (United States)] [Dynamic Science Inc., Aberdeen Proving Ground, MD 21005?5609 (United States); Rosencrance, A.B.; Dennis, W.E. [U.S. Army Center for Environmental Health Research, Department of Chemistry, Ft. Detrick, MD 21702?5010 (United States)] [U.S. Army Center for Environmental Health Research, Department of Chemistry, Ft. Detrick, MD 21702?5010 (United States); Bao, W. [SAS Institute, Inc. SAS Campus Drive, Cary, NC 27513 (United States)] [SAS Institute, Inc. SAS Campus Drive, Cary, NC 27513 (United States); Perkins, E.J. [U.S. Army Engineer Research and Development Center, 3909 Hall Ferry Road, Vicksburg MS 39180 (United States)] [U.S. Army Engineer Research and Development Center, 3909 Hall Ferry Road, Vicksburg MS 39180 (United States); Dillman, J.F. [U.S. Army Medical Research Institute of Chemical Defense, 3100 Ricketts Point Road, Aberdeen Proving Ground, MD 21010?5400 (United States)] [U.S. Army Medical Research Institute of Chemical Defense, 3100 Ricketts Point Road, Aberdeen Proving Ground, MD 21010?5400 (United States); Bannon, D.I., E-mail: desmond.bannon@us.army.mil [U.S. Army Institute of Public Health, 5158 Blackhawk Road, Aberdeen Proving Ground, MD 21010?5403 (United States)

2012-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "implants aerospace fasteners" from the National Library of EnergyBeta (NLEBeta).
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481

Structural alterations in SiC as a result of Cr/sup +/ and N/sup +/ implantation  

SciTech Connect (OSTI)

Ion scattering and channeling techniques were used to study production of disorder and randomization of SiC by implantation of Cr/sup +/ and N/sup +/ at doses of up to 3 x 10/sup 16/ /cm/sup 2/ for Cr/sup +/ and 8 x 10/sup 16/ /cm/sup 2/ for N/sup +/. Experiments were designed so that the calculated damage energy profiles would be well matched for the two ion species. The results were compared for the degree of effectiveness of Cr/sup +/ and N/sup +/ in producing disorder. At higher doses, Cr/sup +/ was much more effective than N/sup +/ for a given damage energy using the same calculational method for Cr/sup +/ as for N/sup +/. In correlated studies of swelling, both species had about the same effectiveness in producing swelling.

Williams, J.M.; McHargue, C.J.; Appleton, B.R.

1982-01-01T23:59:59.000Z

482

Noah D. Manring Mechanical and Aerospace Engineering,  

E-Print Network [OSTI]

transmits 27 times as much power as the diesel engine and 13 times as much power as an AC motor. This comparison illustrates one of several motivations for using hydraulic power versus diesel or electrical power-0472 00 01704-9 Introduction Background. Axial piston machinery is used in fluid power applications

Manring, Noah D.

483

SEMINAR ANNOUNCEMENT DEPARTMENT OF AEROSPACE ENGINEERING & MECHANICS  

E-Print Network [OSTI]

products, pharmaceutical inhalers, office printers, gas turbine engines, spray-chemical-conversion reactors between the two phases; sometimes, mass transfer interactions are also important. These interactions occur

Ponce, V. Miguel

484

Tim Lieuwen School of Aerospace Engineering,  

E-Print Network [OSTI]

that is mainly composed of methane. However, interest in utilizing other energy resources as well as concern about energy security have motivated interest in utilizing coal-derived syngas or fuels from other combined cycle IGCC plants enable the combustion of coal and other solid or liquid fuels, while still

Lieuwen, Timothy C.

485

Salvador E. Menjivar Mechanical-Aerospace Engineering  

E-Print Network [OSTI]

AKA "super" "ultra" #12;A capacitor is an electronic device that stores energy in an electric field with a paper layer saturated in the ionic conducting electrolyte solution #12;Super capacitors store the energy on the surface area of the material, yielding higher energy density. Super capacitors have parallel conductive

Petta, Jason

486

Mechanical and Aerospace Engineering University at Buffalo  

E-Print Network [OSTI]

classes, solar panel offsets, and aging. For detailed surface material characterization, spectrometric and for materials, such as solar array panels, milled aluminum, anodized aluminum, multi-layer insulation, and white/or multi-band photometric measurements are generally required. UB aims to develop a small low- cost space

Krovi, Venkat

487

Minimum weight aerospace structural synthesis program  

E-Print Network [OSTI]

(x ) k+1 k f (xk) (74) 47 subject to the criteria that there must be a zero point in the interval a & x & b (i. e. , f (a) ' f (b) & 0, f (x) w 0, and II l f (x) does not change sign, and that ) f (a) /f (a) ] and I ) f (b) /f (b) I & Ib ? al... be substituted into Eq. (57) to obtain 1 P 1 1+0 N t g E 4 (N-1) (S9) Solving for c N (90) Defining: E ( (N-1) (91) 51 Then k7 c ? 1+@ t (92) From Eq. (76), the expression for g is c (76) Equating g (see Eq. (85) ) and g (see Eq. (76) ), c EXC...

Walker, John Michael

1975-01-01T23:59:59.000Z

488

Assessment Plan BS Aerospace Engineering Program  

E-Print Network [OSTI]

Apprentice -2 Deficient -1 Score Identify relevant mathematical, physical, or systems principles All relevant, as well as to analyze and interpret data Performance Criteria Exemplary -4 Proficient -3 Apprentice -2 Exemplary -4 Proficient -3 Apprentice -2 Deficient -1 Score Ability to identify project objectives based

Hu, Hui

489

Developing a 21st Century Aerospace Workforce  

E-Print Network [OSTI]

Across the industry there are leaders at every level who are being challenged to think and act in new ways. The same is true for this commission. This can't be a "business as usual" review of the industry's status. As the ...

Joel Cutcher-Gershenfeld

2003-04-16T23:59:59.000Z

490

Lean transformation in aerospace assembly operations  

E-Print Network [OSTI]

For the past two decades, virtually all manufacturing companies in the United States have adopted or are in the process of adopting lean manufacturing. Globalization has resulted in the increased availability of reliable, ...

Frauenberger, Douglas H

2007-01-01T23:59:59.000Z

491

Out of this world Aerospace research  

E-Print Network [OSTI]

that led to the development of the Internet and have used our aerodynamics research and wind tunnels Autonomous advanced systems 38 Defence and security 52 Sustainability and environment 62 Engineering

Anderson, Jim

492

Mechanical and Aerospace Engineering Postgraduate Student  

E-Print Network [OSTI]

.................................................................................... 17 Project Seven: Disposing of Decommissioned Offshore Oil Platforms in the North Sea.... 18 Project Eight: Decentralised Integration of Wind Energy with Desalination Plant 19 Part C: Individual Project

Strathclyde, University of

493

Mechanical and Aerospace Engineering University at Buffalo  

E-Print Network [OSTI]

Techniques Zhijie Xu Idaho National Laboratory ABSTRACT Advanced scientific computing emerges as an important method for scientific discovery in addition to the experiments and theoretical approaches. Within

Krovi, Venkat

494

Micro -Thermonuclear AB-Reactors for Aerospace  

E-Print Network [OSTI]

The author offers several innovations that he first suggested publicly early in 1983 for the AB multi-reflex engine, space propulsion, getting energy from plasma, etc. (see: A. Bolonkin, Non-Rocket Space Launch and Flight, Elsevier, London, 2006, Chapters 12, 3A). It is the micro-thermonuclear AB-Reactors. That is new micro-thermonuclear reactor with very small fuel pellet that uses plasma confinement generated by multi-reflection of laser beam or its own magnetic field. The Lawson criterion increases by hundreds of times. The author also suggests a new method of heating the power-making fuel pellet by outer electric current as well as new direct method of transformation of ion kinetic energy into harvestable electricity. These offered innovations dramatically decrease the size, weight and cost of thermonuclear reactor, installation, propulsion system and electric generator. Non-industrial countries can produce these researches and constructions. Currently, the author is researching the efficiency of these innovations for two types of the micro-thermonuclear reactors: multi-reflection reactor (ICF) and self-magnetic reactor (MCF).

Alexander Bolonkin

2007-01-08T23:59:59.000Z

495

Montana State University 1 Aerospace Minor  

E-Print Network [OSTI]

for Physics/Engineer Thermo/Fluids Choose one from the following: 3-4 ECHM 424 Transport Analysis EGEN 324 are common to Mechanical Engineering, Electrical Engineering, Physics, Civil Engineering, Chemical Engineering, Chemistry, and Industrial Engineering at MSU Bozeman. An additional required course, EMEC 368

Maxwell, Bruce D.

496

Sibley School of Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

streams: Mechanical Systems and Materials Processing or Fluids, Energy, and Heat-Transfer Systems energy needs, and perform systems analysis on the human body as a means of understanding the implications that are smaller and lighter than today's available technology. MAE graduates will often go on for further study

Lipson, Michal

497

Sibley School of Mechanical Aerospace Engineering  

E-Print Network [OSTI]

on the local temperature, the heat transfer equations must also be solved. These equations are coupled. The coupling between the heat and ow solvers is elegantly achieved without a ecting either the ow or the heat by density di erences, or a combination of forced convection and density gradients, occur frequently

Zabaras, Nicholas J.

498

Noah D. Manring Mechanical and Aerospace Engineering  

E-Print Network [OSTI]

-flat conditions may exist. For instance, Kazama and Yamaguchi 3,4 have considered two extreme conditions for the bearing operation: 1 mixed lubrication conditions when the as- perities on both surfaces are somewhat-hydrodynamic lubrication. Though both of these conditions are observed in practice, the bearing is not intended to operate

Manring, Noah D.

499

BUILDING THE FUTURE of MECHANICAL & AEROSPACE ENGINEERING  

E-Print Network [OSTI]

others. This breadth of activity is currently disbursed throughout six buildings and the solar energy Weil Hall RIKER HALL WEAVER HALL TOLBERT HALL NORTH HALL Ben Hill Griffin Stadium Rhines Hall GATOR. The Department's research expertise is broad and covers the areas of design and manufacturing, dynamics

Fang, Yuguang "Michael"

500

Designing for cost In an aerospace company  

E-Print Network [OSTI]

Companies take different approaches, and achieve different degrees of implementation, in designing products for cost. This thesis discusses Target Costing and its application at The Boeing Company. Target Costing is a ...

Hammar, Elizabeth (Elizabeth Deming)

2014-01-01T23:59:59.000Z