National Library of Energy BETA

Sample records for high voltage switches

  1. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, John P. (Los Alamos, NM)

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

  2. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, J.P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

  3. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  4. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  5. Low voltage amplifier architecture for high speed switched capacitor circuits 

    E-Print Network [OSTI]

    Shankar, Asit

    2001-01-01

    This work concentrates on circuit realization of high speed and low voltage switched capacitor circuits, with emphasis on the operational transconductance amplifier (OTA). An overview of switched capacitor circuits is given. Speed and voltage...

  6. Optically triggered high voltage switch network and method for switching a high voltage

    DOE Patents [OSTI]

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  7. High voltage switch triggered by a laser-photocathode subsystem

    DOE Patents [OSTI]

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  8. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  9. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  10. High voltage photo switch package module

    SciTech Connect (OSTI)

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  11. Low-profile high-voltage compact gas switch

    SciTech Connect (OSTI)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-06-30

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the switch continued to operate satisfactorily with no apparent tracking or deterioration of the insulator.

  12. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  13. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  14. 130kV 130A High Voltage Switching Mode Power Supply for Neutral Injections – Control Issues and Algorithms

    E-Print Network [OSTI]

    130kV 130A High Voltage Switching Mode Power Supply for Neutral Injections – Control Issues and Algorithms

  15. STRUCTURAL HEALTH MONITORING OF HIGH VOLTAGE ELECTRICAL SWITCH CERAMIC INSULATORS IN SEISMIC AREAS

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    STRUCTURAL HEALTH MONITORING OF HIGH VOLTAGE ELECTRICAL SWITCH CERAMIC INSULATORS IN SEISMIC AREAS damage. 7th European Workshop on Structural Health Monitoring July 8-11, 2014. La Cité, Nantes, France European Workshop on Structural Health Monitoring (2014)" #12;(a) (b) Figure 1 : a) Elect

  16. High-voltage pulse switching hardware for electro-optic studies of conducting aqueous solutions

    E-Print Network [OSTI]

    Augustine, Mathew P.

    High-voltage pulse switching hardware for electro-optic studies of conducting aqueous solutions 22 April 2002 The hardware necessary for the electro-optic study of conducting polyelectrolyte is to present the design of hardware that is applicable, available, and practical for biological electro

  17. High PRF high current switch

    DOE Patents [OSTI]

    Moran, Stuart L. (Fredericksburg, VA); Hutcherson, R. Kenneth (College Park, MD)

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  18. High voltage pulse conditioning

    DOE Patents [OSTI]

    Springfield, Ray M. (Sante Fe, NM); Wheat, Jr., Robert M. (Los Alamos, NM)

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  19. Fast switching, modular high-voltage DC/AC-power supplies for RF-Amplifiers and other applications

    SciTech Connect (OSTI)

    Alex, J.; Schminke, W. [Thomcast AG, Turgi (Switzerland)

    1995-12-31

    A new kind of high voltage high-power Pulse-Step Modulator (PSM) for broadcast transmitters, accelerator sources, for NBI (Neutral Beam Injection for Plasma Heating), gyrotrons and klystrons has been developed. Since its first introduction in 1984 for broadcast transmitters, more than 100 high-power sound broadcast transmitters had been equipped with the first generation of the PSM modulators, using Gate Turn-Off Thyristors (GTOs) as switching elements. Recently, due to faster switching elements and making use of the latest DSP technologies (Digital Signal Processing), the performance data and areas of application could be extended further. In 1994, a precision high voltage source for MW gyrotrons was installed at CRPP in Lausanne. Supplementary very low cost solutions for lower powers but high voltages had been developed. Hence, today, a large area of applications can be satisfied with the family of solutions. The paper describes the principle of operation, the related control systems and refers to some particular applications of the PSM amplifiers, especially the newest developments and corresponding field results.

  20. A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

    E-Print Network [OSTI]

    Robin, Renaud; Segueni, Karim; Millet, Olivier; Buchaillot, Lionel

    2008-01-01

    This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections (4$\\mu$m) with low actuation voltage (7,5V). This design presents also a good contact force and improve the restoring force of the structure. As an example of application, a Single Pole Double Throw (SPDT) for 24GHz applications, based on this design, has been simulated.

  1. Minimizing Simultaneous Switching Noise at Reduced Power with Constant-Voltage Power Transmission Lines for High-Speed Signaling

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    transmission line, while the low state of the output data draws much less current. Thus, the DC dropMinimizing Simultaneous Switching Noise at Reduced Power with Constant-Voltage Power Transmission plane structure with a power transmission line (PTL). In this paper, a new power delivery scheme called

  2. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

    DOE Patents [OSTI]

    Sullivan, James S.; Hawkins, Steven A.

    2012-09-04

    An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

  3. Low power, scalable multichannel high voltage controller

    DOE Patents [OSTI]

    Stamps, James Frederick (Livermore, CA); Crocker, Robert Ward (Fremont, CA); Yee, Daniel Dadwa (Dublin, CA); Dils, David Wright (Fort Worth, TX)

    2006-03-14

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  4. Low power, scalable multichannel high voltage controller

    DOE Patents [OSTI]

    Stamps, James Frederick (Livermore, CA); Crocker, Robert Ward (Fremont, CA); Yee, Daniel Dadwa (Dublin, CA); Dils, David Wright (Fort Worth, TX)

    2008-03-25

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  5. Low-Voltage Switched-Capacitor Circuits Emad Bidari

    E-Print Network [OSTI]

    Moon, Un-Ku

    Low-Voltage Switched-Capacitor Circuits by Emad Bidari A THESIS submitted to Oregon State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2. THE OPERATION AND IMPLEMENTATION OF THE LOW-VOLTAGE INTEGRA- TOR. LOW-VOLTAGE SC FILTER STAGES

  6. Switched-capacitor step-down rectifier for low-voltage power conversion

    E-Print Network [OSTI]

    Li, Wei

    This paper presents a switched-capacitor rectifier that provides step down voltage conversion from an ac input voltage to a dc output. Coupled with current-drive source, low-loss and high step-down rectification is realized. ...

  7. Low-voltage, low-power, low switching error, class-AB switched current

    E-Print Network [OSTI]

    Serdijn, Wouter A.

    Low-voltage, low-power, low switching error, class-AB switched current memory cell C. Sawigun and W into two components by a low-voltage class-AB current splitter and subsequently processes the individual signals by two low switching error class-A memory cells. As a conse- quence, the output current obtained

  8. DEVELOPMENT OF BROADBAND LOW-VOLTAGE RF MEM SWITCHES

    E-Print Network [OSTI]

    Shen, Shyh-Chiang

    DEVELOPMENT OF BROADBAND LOW-VOLTAGE RF MEM SWITCHES S.C. Shen, D. T. Becher, D. C. Caruth, and M)333-4054 Fax: (217) 244-6375 Abstract We present novel RF switches using micro-electro- mechanical (MEM) technology. These MEM switches are built on GaAs substrates using GaAs MESFET MMIC- compatible processes

  9. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    DOE Patents [OSTI]

    Caporaso, G.J.; Sampayan, S.E.; Kirbie, H.C.

    1998-10-13

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 12 figs.

  10. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    DOE Patents [OSTI]

    Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Kirbie, Hugh C. (Dublin, CA)

    1998-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  11. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, Thomas F. (Batavia, IL)

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  12. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  13. Temperature controlled high voltage regulator

    DOE Patents [OSTI]

    Chiaro, Jr., Peter J. (Clinton, TN); Schulze, Gerald K. (Knoxville, TN)

    2004-04-20

    A temperature controlled high voltage regulator for automatically adjusting the high voltage applied to a radiation detector is described. The regulator is a solid state device that is independent of the attached radiation detector, enabling the regulator to be used by various models of radiation detectors, such as gas flow proportional radiation detectors.

  14. Ultra-compact Marx-type high-voltage generator

    DOE Patents [OSTI]

    Goerz, David A. (Brentwood, CA); Wilson, Michael J. (Modesto, CA)

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  15. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    SciTech Connect (OSTI)

    Sharath, S. U. Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.

    2014-08-18

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3?V is observed up to 200?nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  16. High voltage photovoltaic power converter

    DOE Patents [OSTI]

    Haigh, Ronald E. (Arvada, CO); Wojtczuk, Steve (Cambridge, MA); Jacobson, Gerard F. (Livermore, CA); Hagans, Karla G. (Livermore, CA)

    2001-01-01

    An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

  17. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, R.J.

    1996-10-22

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

  18. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, Rodney J. (Los Alamos, NM)

    1996-01-01

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

  19. Low Actuation Voltage RF MEMS SwitchesWith Signal Frequencies From 0.25GHz to 40GHz

    E-Print Network [OSTI]

    Shen, Shyh-Chiang

    Low Actuation Voltage RF MEMS SwitchesWith Signal Frequencies From 0.25GHz to 40GHz Shyh-voltage radio-frequency micro- electromechanical system (RF MEMS) switch is reported. The device switching of better than 27 dB over the frequency band from 0.25GHz to 40GHz was achieved. The RF MEMS switch

  20. High voltage load resistor array

    DOE Patents [OSTI]

    Lehmann, Monty Ray (Smithfield, VA)

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  1. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS--I: REGULAR PAPERS, VOL. 55, NO. 6, JULY 2008 1751 Dual Low-Voltage IC Design for High-Voltage

    E-Print Network [OSTI]

    and low side gate drivers are required in most switching power converters to provide on/off control Low-Voltage IC Design for High-Voltage Floating Gate Drives Yan Yin, Member, IEEE, and Regan Zane, Senior Member, IEEE Abstract--An integrated circuit (IC) design for low and high side gate drive in high

  2. High voltage electrical amplifier having a short rise time

    DOE Patents [OSTI]

    Christie, David J. (Pleasanton, CA); Dallum, Gregory E. (Livermore, CA)

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  3. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  4. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  5. High performance RF MEMS metal-contact switches and switching networks

    E-Print Network [OSTI]

    Patel, Chirag D.; Patel, Chirag D.

    2012-01-01

    MEMS switches for RF applications,” MicroelectromechanicalMEMS switch with a corrugated diaphragm,” MicroelectromechanicalMEMS switch technology for high frequency applications,” in Microelectromechanical

  6. Hybrid switch for resonant power converters

    DOE Patents [OSTI]

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  7. Welcome to the High Voltage Laboratory The EEH -High Voltage Laboratory is part of the Energy Transmission and High Voltage Laboratory

    E-Print Network [OSTI]

    Grabner, Helmut

    Welcome to the High Voltage Laboratory The EEH - High Voltage Laboratory is part of the Energy Transmission and High Voltage Laboratory (EEH) of the Department of Information Technology and Electrical focus of the high voltage laboratory is in the area of technologies for a future sustainable electric

  8. Electro-optic high voltage sensor

    DOE Patents [OSTI]

    Davidson, James R.; Seifert, Gary D.

    2003-09-16

    A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

  9. Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands

    E-Print Network [OSTI]

    Chen, Long-Qing

    -dimensional multiferroic nanoislands should provide great flexibilities for designing novel high-density spintronic/microelectronic

  10. Principles of ground relaying for high voltage and extra high voltage transmission lines

    SciTech Connect (OSTI)

    Griffin, C.H.

    1983-02-01

    This paper is a tutorial discussion of the basic principles of ground relaying for high voltage and extra high voltage transmission lines. Three different HV configurations are considered: Long lines, lines with a weak mid-point station, and mutually-coupled lines. Application criteria for EHV circuits are also discussed, and specific setting calculations are included where appropriate.

  11. High performance RF MEMS metal-contact switches and switching networks

    E-Print Network [OSTI]

    Patel, Chirag D.; Patel, Chirag D.

    2012-01-01

    A Compact Cantilever-Based RF MEMS Switch andA High-Performance RF MEMS Metal-Contact Switch and Switch-B High-Q 3-/4-Bit RF MEMS Digitally Tunable Capacitors for

  12. Electromechanical modulation of electrical conduction through organic thin films for switching applications

    E-Print Network [OSTI]

    Niroui, Farnaz

    2013-01-01

    Nanoelectromechanical (NEM) switches exhibit abrupt switching behavior and near-zero leakage current making them promising alternatives to conventional semiconductor switches. However, they require high actuation voltages ...

  13. Modular high voltage power supply for chemical analysis

    DOE Patents [OSTI]

    Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

    2007-01-09

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  14. Modular high voltage power supply for chemical analysis

    DOE Patents [OSTI]

    Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  15. Modular high voltage power supply for chemical analysis

    DOE Patents [OSTI]

    Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

    2010-05-04

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  16. Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

    DOE Patents [OSTI]

    Ierna, W.F.

    1986-03-11

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  17. Design and Implementation of Switching Voltage Integrated Circuits Based on Sliding Mode Control 

    E-Print Network [OSTI]

    Rojas Gonzalez, Miguel Angel

    2010-10-12

    .S. (Honors), ITESM Campus Toluca, Mexico Chair of Advisory Committee: Dr. Edgar S?anchez-Sinencio The need for high performance circuits in systems with low-voltage and low-power requirements has exponentially increased during the few last years due... measurements of the dual-output buck voltage regulator for (a) Medium load condition and (b) High load condition : : : 207 132 (a) Power efficiency measurements of the dual-output buck voltage versus both output currents and (b) Top view...

  18. Voltage-controlled switching and thermal effects in VO{sub 2} nano-gap junctions

    SciTech Connect (OSTI)

    Joushaghani, Arash; Jeong, Junho; Stewart Aitchison, J.; Poon, Joyce K. S. [Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada); Paradis, Suzanne; Alain, David [Defence Research and Development Canada - Valcartier, 2459 Pie-XI Blvd. North, Quebec, Quebec G3J 1X5 (Canada)

    2014-06-02

    Voltage-controlled switching in lateral VO{sub 2} nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of Joule heating on the phase transition was found to be strongly influenced by the device geometry, the contact material, and the current. Our results indicate that the VO{sub 2} phase transition was likely initiated electronically, which was sometimes followed by a secondary thermally induced transition.

  19. Dual Low Voltage IC Based High and Low Side Yan Yin, Regan Zane

    E-Print Network [OSTI]

    Dual Low Voltage IC Based High and Low Side Gate Drive Yan Yin, Regan Zane Colorado Power Electronics Center University of Colorado at Boulder Boulder, CO 80309-0425 Abstract--high and low-side gate between the switches to avoid simultaneous conduction. A method is proposed that uses two low

  20. Integrated Results for Dual Low Voltage IC Based High and Low Side Gate Drive

    E-Print Network [OSTI]

    , electronicballast I. INTRODUCTION High and low side gate drivers are required in most switching power converters Zane Colorado Power Electronics Center (CoPEC) Department of Electrical and Computer Engineering, UCB design for high and low side gate drive is presented based on use of two identical low voltage ICs

  1. Modeling Combustion Control for High Power Diesel Mode Switching...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Combustion Control for High Power Diesel Mode Switching Modeling Combustion Control for High Power Diesel Mode Switching Poster presentation given at the 16th Directions in...

  2. Field Optimization of Three Dimensional High Voltage C. Trinitis

    E-Print Network [OSTI]

    Stamatakis, Alexandros

    The design of high voltage systems and their com­ ponents (e.g. gas insulated switchgear, trans­ formers etc

  3. Safe epoxy encapsulant for high voltage magnetics

    SciTech Connect (OSTI)

    Sanchez, R.O.; Archer, W.E.

    1998-01-01

    This paper describes the use of Formula 456, an aliphatic amine cured epoxy for impregnating coils and high voltage transformers. Sandia has evaluated a number of MDA-free epoxy encapsulants which relied on either anhydride or other aromatic amine curing agents. The use of aliphatic amine curing agents was more recently evaluated and has resulted in the definition of Formula 456 resin. Methylene dianiline (MDA) has been used for more than 20 years as the curing agent for various epoxy formulations throughout the Department of Energy and much of industry. Sandia National Laboratories began the process of replacing MDA with other formulations because of regulations imposed by OSHA on the use of MDA. OSHA has regulated MDA because it is a suspect carcinogen. Typically the elimination of OSHA-regulated materials provides a rare opportunity to qualify new formulations in a range of demanding applications. It was important to take full advantage of that opportunity, although the associated materials qualification effort was costly. Small high voltage transformers are one of those demanding applications. The successful implementation of the new formulation for high reliability transformers will be described. The test results that demonstrate the parts are qualified for use in DOE weapon systems will be presented.

  4. Production of high voltage by ion bombardment 

    E-Print Network [OSTI]

    Phinney, Lucas Carter

    2003-01-01

    and was embedded in a Teflon rod. The beam energies were varied between 30 and 100 kV. A maximum voltage of approximately 90 kV was achieved on the target, and at this voltage, the power efficiency was approximately 85 percent. This power efficiency was greater...

  5. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, R.L.; Kirbie, H.C.; Newton, M.A.

    1998-06-30

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

  6. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solid Polymer Batteries for Electric Drive Vehicles High-Voltage Solid Polymer Batteries for Electric Drive Vehicles 2012 DOE Hydrogen and Fuel Cells Program and Vehicle...

  7. Nanoscale Morphological and Chemical Changes of High Voltage...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanoscale Morphological and Chemical Changes of High Voltage Lithium-Manganese Rich NMC Composite Cathodes with Cycling Friday, August 29, 2014 Renewable energy is critical for the...

  8. Lockout device for high voltage circuit breaker

    DOE Patents [OSTI]

    Kozlowski, L.J.; Shirey, L.A.

    1993-01-26

    An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the respective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

  9. Lookout device for high voltage circuit breaker

    SciTech Connect (OSTI)

    Kozlowski, L.J.; Shirey, L.A.

    1991-12-31

    An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the respective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

  10. Lockout device for high voltage circuit breaker

    SciTech Connect (OSTI)

    Kozlowski, Lawrence J. (New Kensington, PA); Shirey, Lawrence A. (North Huntingdon, PA)

    1993-01-01

    An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the repsective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

  11. Switching power converter Figure 1(a): Switching DC-DC converter with analog voltage-mode control

    E-Print Network [OSTI]

    + ­ RC L Vg 1 2 i + v _ Vref + _ Gc(s) VM = 1 PWM u c Switching power converter H v dTs H = 1 design of digital compensators. I. INTRODUCTION Discrete-time modeling of dc-dc switching converters has IEEE. #12;+ ­ R C L Vg 1 2 i + v _ Vref + _ Gc(z) VM = 1 DPWM u c Switching power converter H v dTs H

  12. Triggered plasma opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W. (Albuquerque, NM)

    1988-01-01

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  13. Aalborg Universitet Switching speed limitations of high power IGBT modules

    E-Print Network [OSTI]

    Munk-Nielsen, Stig

    of the total power loss. Therefore, by design, it is critical that switching losses are reduced to a minimumAalborg Universitet Switching speed limitations of high power IGBT modules Incau, Bogdan Ioan.aau.dk on: november 29, 2015 #12;Switching speed limitations of high power IGBT modules Bogdan Ioan Incau

  14. An Ultra-Compact Marx-Type High-Voltage Generator

    SciTech Connect (OSTI)

    Goerz, D; Ferriera, T; Nelson, D; Speer, R; Wilson, M

    2001-06-15

    This paper discusses the design of an ultra-compact, Marx-type, high-voltage generator. This system incorporates high-performance components that are closely coupled and integrated into an extremely compact assembly. Low profile, custom ceramic capacitors with coplanar extended electrodes provide primary energy storage. Low-inductance, spark-gap switches incorporate miniature gas cavities imbedded within the central region of the annular shaped capacitors, with very thin dielectric sections separating the energy storage capacitors. Carefully shaped electrodes and insulator surfaces are used throughout to minimize field enhancements, reduce fields at triple-point regions, and enable operation at stress levels closer to the intrinsic breakdown limits of the dielectric materials. Specially shaped resistors and inductors are used for charging and isolation during operation. Forward-coupling ceramic capacitors are connected across successive switch-capacitor-switch stages to assist in switching. Pressurized SF, gas is used for electrical insulation in the spark-gap switches and throughout the unit. The pressure housing is constructed entirely of dielectric materials, with segments that interlock with the low-profile switch bodies to provide an integrated support structure for all of the components. This ultra-compact Marx generator employs a modular design that can be sized as needed for a particular application. Units have been assembled with 4, 10, and 30 stages and operated at levels up to 100 kV per stage.

  15. Measurement of high voltage using Rutherford backscattering spectrometry 

    E-Print Network [OSTI]

    Abrego, Celestino Pete

    2007-04-25

    A novel variation of Rutherford Backscattering Spectrometry (RBS) has been utilized to measure a high voltage collected on an aluminum target by Direct Energy Conversion. The maximum high voltage on the target was measured to be 97.5 kV +/- 2 k...

  16. Remote switch actuator

    DOE Patents [OSTI]

    Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

    2013-01-29

    The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

  17. Design and analysis of a zero-voltage switching scheme for a dc- to-dc converter 

    E-Print Network [OSTI]

    Arun, G.

    1992-01-01

    DESIGN AND ANALYSIS OF A ZERO-VOLTAGE SSVITCHING SCFIE'. tIE FOR A DC-TO-DC CONVERTER A Thesis by G. ARUN Submitted to the Office of Graduate Studies of Texas ARM 1. niversity in partial fulfillment of the requirements for the degree... of MASTER OF SCIENCE December 1992 Major Subject: Electrical Engineering DESIGN AND ANALYSIS OE A ZERO-VOLTAGE SWITCHING SCHEME I'OR A DC-TO-DC CONVERTER A Thesis by G. AR(tN Approved as to style and content by: P. Enjeti (Chair of Cornrnitteel C...

  18. Planar LTCC transformers for high voltage flyback converters.

    SciTech Connect (OSTI)

    Schofield, Daryl (NASCENT Technology Inc. , Watertown, SD); Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George (NASCENT Technology Inc. , Watertown, SD); Abel, Dave (NASCENT Technology Inc. , Watertown, SD)

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  19. Optical fiber imaging for high speed plasma motion diagnostics: Applied to low voltage circuit breakers

    SciTech Connect (OSTI)

    McBride, J. W.; Balestrero, A.; Tribulato, G.; Ghezzi, L.; Cross, K. J.

    2010-05-15

    An integrated portable measurement system is described for the study of high speed and high temperature unsteady plasma flows such as those found in the vicinity of high current switching arcs. An array of optical fibers allows the formation of low spatial resolution images, with a maximum capture rate of 1x10{sup 6} images per second (1 MHz), with 8 bit intensity resolution. Novel software techniques are reported to allow imaging of the arc; and to measure arc trajectories. Results are presented on high current (2 kA) discharge events in a model test fixture and on the application to a commercial low voltage circuit breaker.

  20. CLNS 03/1827 VERY HIGH VOLTAGE PHOTOEMISSION ELECTRON GUNS*

    E-Print Network [OSTI]

    CLNS 03/1827 VERY HIGH VOLTAGE PHOTOEMISSION ELECTRON GUNS* Charles K. Sinclair # , Cornell voltage DC electron guns with photoemission cathodes are a natural choice for generating the beams gradient in these guns. The photocathode operational lifetime is limited by the gun vacuum and by ion back

  1. High-voltage air-core pulse transformers

    SciTech Connect (OSTI)

    Rohwein, G. J.

    1981-01-01

    General types of air core pulse transformers designed for high voltage pulse generation and energy transfer applications are discussed with special emphasis on pulse charging systems which operate up to the multi-megavolt range. The design, operation, dielectric materials, and performance are described. It is concluded that high voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The principal disadvantage of high voltage air core transformers is that they are not generally available from commercial sources. Consequently, the potential user must become thoroughly familiar with all aspects of design, fabrication and system application before he can produce a high performance transformer system. (LCL)

  2. Extremum seeking-based optimization of high voltage converter modulator rise-time

    SciTech Connect (OSTI)

    Scheinker, Alexander; Bland, Michael; Krstic, Miroslav; Audia, Jeff

    2013-02-01

    We digitally implement an extremum seeking (ES) algorithm, which optimizes the rise time of the output voltage of a high voltage converter modulator (HVCM) at the Los Alamos Neutron Science Center (LANSCE) HVCM test stand by iteratively, simultaneously tuning the first 8 switching edges of each of the three phase drive waveforms (24 variables total). We achieve a 50 ?s rise time, which is reduction in half compared to the 100 ?s achieved at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory. Considering that HVCMs typically operate with an output voltage of 100 kV, with a 60Hz repetition rate, the 50 ?s rise time reduction will result in very significant energy savings. The ES algorithm will prove successful, despite the noisy measurements and cost calculations, confirming the theoretical results that the algorithm is not affected by noise whose frequency components are independent of the perturbing frequencies.

  3. Extremum seeking-based optimization of high voltage converter modulator rise-time

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Scheinker, Alexander; Bland, Michael; Krstic, Miroslav; Audia, Jeff

    2013-02-01

    We digitally implement an extremum seeking (ES) algorithm, which optimizes the rise time of the output voltage of a high voltage converter modulator (HVCM) at the Los Alamos Neutron Science Center (LANSCE) HVCM test stand by iteratively, simultaneously tuning the first 8 switching edges of each of the three phase drive waveforms (24 variables total). We achieve a 50 ?s rise time, which is reduction in half compared to the 100 ?s achieved at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory. Considering that HVCMs typically operate with an output voltage of 100 kV, with a 60Hz repetitionmore »rate, the 50 ?s rise time reduction will result in very significant energy savings. The ES algorithm will prove successful, despite the noisy measurements and cost calculations, confirming the theoretical results that the algorithm is not affected by noise whose frequency components are independent of the perturbing frequencies.« less

  4. Electrical system architecture having high voltage bus

    DOE Patents [OSTI]

    Hoff, Brian Douglas (East Peoria, IL); Akasam, Sivaprasad (Peoria, IL)

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  5. Dynamic Voltage and Frequency Scaling Control for Crossbars in Input-Queued Switches

    E-Print Network [OSTI]

    . Hence, reducing the power consumption is an important design question to improve the crossbar switching Abstract--The power consumption in chips, in general, and in crossbars switching fabrics, in particular for the switching fabrics implemented on chip. Indeed, the power consumption increases more than linearly

  6. Unravelling the Performance Degradation Mechanisms in High-voltage...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unravelling the Performance Degradation Mechanisms in High-voltage Lithium-ion Battery Composite Oxide Electrodes Apr 11 2014 02:00 PM - 03:00 PM Debasish Mohanty, ORNL, Oak Ridge...

  7. Development of high-voltage pulse-slicer unit with variable pulse duration for pulse radiolysis system

    SciTech Connect (OSTI)

    Upadhyay, J.; Sharma, M. L.; Navathe, C. P. [Laser Electronic Support Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Toley, M. A.; Shinde, S. J.; Nadkarni, S. A.; Sarkar, S. K. [Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2012-02-15

    A high-voltage pulse-slicer unit with variable pulse duration has been developed and integrated with a 7 MeV linear electron accelerator (LINAC) for pulse radiolysis investigation. The pulse-slicer unit provides switching voltage from 1 kV to 10 kV with rise time better than 5 ns. Two MOSFET based 10 kV switches were configured in differential mode to get variable duration pulses. The high-voltage pulse has been applied to the deflecting plates of the LINAC for slicing of electron beam of 2 {mu}s duration. The duration of the electron beam has been varied from 30 ns to 2 {mu}s with the optimized pulse amplitude of 7 kV to get corresponding radiation doses from 6 Gy to 167 Gy.

  8. High-index-contrast electromechanical optical switches

    E-Print Network [OSTI]

    Bryant, Reginald (Reginald Eugene), 1978-

    2011-01-01

    System developers are looking to replace protocol-dependent, bandwidth-limited optical networks with intelligent optically-transparent integrated photonic networks. Several electromechanical optical switches are explored ...

  9. The progress of funnelling gun high voltage condition and beam test

    SciTech Connect (OSTI)

    Wang, E.; Ben-Zvi, I.; Gassner, D. M.; Lambiase, R.; Meng, W.; Rahman, O.; Pikin, A.; Rao, T.; Sheehy, B.; Skaritka, J.; Pietz, J.; Ackeret, M.; Yeckel, C.; Miller, R.; Dobrin, E.; Thompson, K.

    2015-05-03

    A prototype of a high average current polarized electron funneling gun as an eRHIC injector has been built at BNL. The gun was assembled and tested at Stangenes Incorporated. Two beams were generated from two GaAs photocathodes and combined by a switched combiner field. We observed the combined beams on a YAG crystal and measured the photocurrent by a Faraday cup. The gun has been shipped to Stony Brook University and is being tested there. In this paper we will describe the major components of the gun and recent beam test results. High voltage conditioning is discussed as well.

  10. Design & Fabrication of a High-Voltage Photovoltaic Cell

    SciTech Connect (OSTI)

    Felder, Jennifer; /North Carolina State U. /SLAC

    2012-09-05

    Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

  11. High voltage series connected tandem junction solar battery

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  12. The design, construction, and operation of long-distance high-voltage electricity transmission technologies.

    SciTech Connect (OSTI)

    Molburg, J. C.; Kavicky, J. A.; Picel, K. C.

    2008-03-03

    This report focuses on transmission lines, which operate at voltages of 115 kV and higher. Currently, the highest voltage lines comprising the North American power grid are at 765 kV. The grid is the network of transmission lines that interconnect most large power plants on the North American continent. One transmission line at this high voltage was built near Chicago as part of the interconnection for three large nuclear power plants southwest of the city. Lines at this voltage also serve markets in New York and New England, also very high demand regions. The large power transfers along the West Coast are generally at 230 or 500 kV. Just as there are practical limits to centralization of power production, there are practical limits to increasing line voltage. As voltage increases, the height of the supporting towers, the size of the insulators, the distance between conductors on a tower, and even the width of the right-of-way (ROW) required increase. These design features safely isolate the electric power, which has an increasing tendency to arc to ground as the voltage (or electrical potential) increases. In addition, very high voltages (345 kV and above) are subject to corona losses. These losses are a result of ionization of the atmosphere, and can amount to several megawatts of wasted power. Furthermore, they are a local nuisance to radio transmission and can produce a noticeable hum. Centralized power production has advantages of economies of scale and special resource availability (for instance, hydro resources), but centralized power requires long-distance transfers of power both to reach customers and to provide interconnections for reliability. Long distances are most economically served at high voltages, which require large-scale equipment and impose a substantial footprint on the corridors through which power passes. The most visible components of the transmission system are the conductors that provide paths for the power and the towers that keep these conductors at a safe distance from each other and from the ground and the natural and built environment. Common elements that are generally less visible (or at least more easily overlooked) include the maintained ROW along the path of the towers, access roads needed for maintenance, and staging areas used for initial construction that may be restored after construction is complete. Also visible but less common elements along the corridor may include switching stations or substations, where lines of similar or different voltages meet to transfer power.

  13. High performance RF MEMS metal-contact switches and switching networks

    E-Print Network [OSTI]

    Patel, Chirag D.; Patel, Chirag D.

    2012-01-01

    3.2.1 Switch Overview . . . . . . . . . . . . . . . . . . .MEMS Switch and Networks . . . . . . . . . . . . . . . . . .4.1 Switch Design . . . . . . . . . . . . . . . . . . 4.2

  14. Power Conversion Architecture for Grid Interface at High Switching Frequency

    E-Print Network [OSTI]

    Perreault, Dave

    voltage from the voltage of energy buffer capacitor. The boost converter is often selected for PFC circuit output powers). Instead of a boost converter, one alternative for the PFC circuit is a buck converter is suitable for realizing miniaturized ac-dc converters operating at high frequencies (HF, above 3 MHz

  15. High Voltage DC Transmission 1.0 Introduction

    E-Print Network [OSTI]

    McCalley, James D.

    1 High Voltage DC Transmission 1.0 Introduction HVDC has been applied in electric power systems Supplier: ABB Railroa d DC Tie USA - Mission, TX 26°1001N9 8°1925W USA - Mission, TX 26°1001N9 8°1925W 21

  16. High Voltage DC Transmission 2 1.0 Introduction

    E-Print Network [OSTI]

    McCalley, James D.

    1 High Voltage DC Transmission 2 1.0 Introduction Interconnecting HVDC within an AC system requires conversion from AC to DC and inversion from DC to AC. We refer to the circuits which provide conversion from AC to DC as rectifiers and the circuits which provide conversion from DC to AC as inverters. The term

  17. Chronic Benzodiazepine Administration Potentiates High Voltage-Activated Calcium Currents

    E-Print Network [OSTI]

    Abraham, Nader G.

    effects from drug withdrawal phenomena to dependence on a variety of drugs of abuse. High voltage benzodiazepine physical dependence. Benzodiazepines, a group of positive allosteric modulators of GABAA receptors legitimate prescription of benzodiazepines increases the proportion of patients who develop dependence

  18. Coupled Dual Interleaved Flyback Converter for High Input Voltage Application

    E-Print Network [OSTI]

    Lehman, Brad

    proposed integrated boost converters [7] that are beginning to see applications in automotive power buck-boost (Flyback) power converter [9,10] that utilizes one magnetic core to integrate two FlybackCoupled Dual Interleaved Flyback Converter for High Input Voltage Application Ting Qian, Brad

  19. Optical Spectra of the High Voltage Erosive Water Discharge

    E-Print Network [OSTI]

    Pirozerski, A L

    2008-01-01

    In the present paper kinetics of emission spectra of the high voltage erosive water discharge at near ultraviolet and visible spectral ranges has been investigated. Obtained results show a similarity of physical properties of this discharge (and of corresponding plasmoids) to that of some other types of erosional discharges which also result in the formation of dust-gas fireballs.

  20. Digital measurement system for the LHC klystron high voltage modulator.

    E-Print Network [OSTI]

    Mikkelsen, Anders

    Accelerating voltage in the Large Hadron Collider (LHC) is created by a means of 16 superconducting standing wave RF cavities, each fed by a 400MHz/300kW continuous wave klystron amplifier. Part of the upgrade program for the LHC long shutdown one is to replace the obsolete analogue current and voltage measurement circuitry located in the high voltage bunkers by a new, digital system, using ADCs and optical fibres. A digital measurement card is implemented and integrated into the current HV modulator oil tank (floating at -58kV) and interfaced to the existing digital VME boards collecting the data for several klystrons at the ground potential. Measured signals are stored for the logging, diagnostics and post-mortem analysis purposes.

  1. FERROELECTRIC SWITCH FOR A HIGH-POWER Ka-BAND ACTIVE PULSE COMPRESSOR

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW ?s-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  2. Low Input Voltage Switching Amplifiers for Piezoelectric Actuators Douglas K. Lindnerl

    E-Print Network [OSTI]

    Lindner, Douglas K.

    Tech to appear in Proceedings of SPIE's 2002 North American Symposium on Smart Structures and Materials: Industrial and Commercial Applications of Smart Structures Technologies, Anne-Marie McGowen, Ed., San Diego to the maximum voltage required by the piezoelectric actuator. The second stage is a half-bridge amplifier which

  3. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect (OSTI)

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  4. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancingR Walls - Building America Topa High BindingVoltage

  5. Fiber optic current monitor for high-voltage applications

    DOE Patents [OSTI]

    Renda, G.F.

    1992-04-21

    A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time. 6 figs.

  6. Magnetic shielding of Hall thrusters at high discharge voltages

    SciTech Connect (OSTI)

    Mikellides, Ioannis G., E-mail: Ioannis.G.Mikellides@jpl.nasa.gov; Hofer, Richard R.; Katz, Ira; Goebel, Dan M. [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (United States)

    2014-08-07

    A series of numerical simulations and experiments have been performed to assess the effectiveness of magnetic shielding in a Hall thruster operating in the discharge voltage range of 300–700?V (I{sub sp}???2000–2700?s) at 6?kW, and 800?V (I{sub sp} ? 3000) at 9?kW. At 6?kW, the magnetic field topology with which highly effective magnetic shielding was previously demonstrated at 300?V has been retained for all other discharge voltages; only the magnitude of the field has been changed to achieve optimum thruster performance. It is found that magnetic shielding remains highly effective for all discharge voltages studied. This is because the channel is long enough to allow hot electrons near the channel exit to cool significantly upon reaching the anode. Thus, despite the rise of the maximum electron temperature in the channel with discharge voltage, the electrons along the grazing lines of force remain cold enough to eliminate or reduce significantly parallel gradients of the plasma potential near the walls. Computed maximum erosion rates in the range of 300–700?V are found not to exceed 10{sup ?2}?mm/kh. Such rates are ?3 orders of magnitude less than those observed in the unshielded version of the same thruster at 300?V. At 9?kW and 800?V, saturation of the magnetic circuit did not allow for precisely the same magnetic shielding topology as that employed during the 6-kW operation since this thruster was not designed to operate at this condition. Consequently, the maximum erosion rate at the inner wall is found to be ?1 order of magnitude higher (?10{sup ?1}?mm/kh) than that at 6?kW. At the outer wall, the ion energy is found to be below the sputtering yield threshold so no measurable erosion is expected.

  7. Vehicle Technologies Office Merit Review 2015: High-Voltage, High-Capacity Polyanion Cathodes

    Broader source: Energy.gov [DOE]

    Presentation given by U of Texas at Austin at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high-voltage, high...

  8. Anode initiated surface flashover switch

    DOE Patents [OSTI]

    Brainard, John P. (Albuquerque, NM); Koss, Robert J. (Albuquerque, NM)

    2003-04-29

    A high voltage surface flashover switch has a pair of electrodes spaced by an insulator. A high voltage is applied to an anode, which is smaller than the opposing, grounded, cathode. When a controllable source of electrons near the cathode is energized, the electrons are attracted to the anode where they reflect to the insulator and initiate anode to cathode breakdown.

  9. High voltage design structure for high temperature superconducting device

    DOE Patents [OSTI]

    Tekletsadik, Kasegn D. (Rexford, NY)

    2008-05-20

    In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.

  10. Experimental validation of a high voltage pulse measurement method.

    SciTech Connect (OSTI)

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobate's (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps - 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensor's U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  11. Curing system for high voltage cross linked cables

    DOE Patents [OSTI]

    Bahder, George (Edison, NJ); Katz, Carlos (Edison, NJ); Bopp, Louis A. (Fair Haven, NJ)

    1978-01-01

    This invention makes extruded, vulcanized, high voltage cables insulated with thermosetting compounds at much higher rates of production and with superior insulation of reduced thickness and with reduced cavities or voids in the insulation. As the cable comes from an extruder, it passes into a curing chamber with a heat booster that quickly raises the insulation to a temperature at which it is cured much more quickly than with steam heating of the prior art. A high temperature liquid in contact with the insulation maintains the high temperature; and because of the greater curing heat, the cable can travel through the curing chamber at a faster rate and into a cooling tube where it contacts with a cooling liquid under high pressure. The insulation compound is treated to reduce the size of cavities; and the high pressure maintained by the curing and cooling mediums prevent expansion of cavities before the insulation is set.

  12. Self-monitoring high voltage transmission line suspension insulator

    DOE Patents [OSTI]

    Stemler, Gary E. (Vancouver, WA); Scott, Donald N. (Vancouver, WA)

    1981-01-01

    A high voltage transmission line suspension insulator (18 or 22) which monitors its own dielectric integrity. A dielectric rod (10) has one larger diameter end fitting attachable to a transmission line and another larger diameter end fitting attachable to a support tower. The rod is enclosed in a dielectric tube (14) which is hermetically sealed to the rod's end fittings such that a liquidtight space (20) is formed between the rod and the tube. A pressurized dielectric liquid is placed within that space. A discoloring dye placed within this space is used to detect the loss of the pressurized liquid.

  13. Induction of nuclear fission by high-voltage application

    E-Print Network [OSTI]

    Hirokazu Maruyama

    2007-11-20

    In nuclear power generation, fissile materials are mainly used. For example, $U^{235}$ is fissile and therefore quite essential for use of nuclear energy. However, the material $U^{235}$ has very small natural abundance less than 1 %. We should seek possibility of utilizing fissionable materials such as $U^{238}$ because natural abundance of such fissionable materials is generally much larger than fissile ones. In this paper, we show that thermal neutrons with vanishing kinetic energy can induce nuclear fission when high voltage is applied to fissionable materials. To obtain this result, we use the liquid-drop model for nuclei. Finally, we propose how fissionable materials can be utilized.

  14. Automatic System for the D.C. High Voltage Qualification of the Superconducting Electrical Circuits of the LHC Machine

    E-Print Network [OSTI]

    Bozzini, D; Russenschuck, Stephan; Bednarek, M; Jurkiewicz, P; Kotarba, A; Ludwin, J; Olek, S

    2008-01-01

    A d.c. high voltage test system has been developed to verify automatically the insulation resistance of the powering circuits of the LHC. In the most complex case, up to 72 circuits share the same volume inside cryogenic lines. Each circuit can have an insulation fault versus any other circuit or versus ground. The system is able to connect up to 80 circuits and apply a voltage up to 2 kV D.C. The leakage current flowing through each circuit is measured within a range of 1 nA to 1.6 mA. The matrix of measurements allows characterizing the paths taken by the currents and locating weak points of the insulation between circuits. The system is composed of a D.C. voltage source and a data acquisition card. The card is able to measure with precision currents and voltages and to drive up to 5 high voltage switching modules offering 16 channels each. A LabVIEW application controls the system for an automatic and safe operation. This paper describes the hardware and software design, the testing methodology and the res...

  15. An accurate continuous calibration system for high voltage current transformer

    SciTech Connect (OSTI)

    Tong Yue; Li Binhong [College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei Province (China)

    2011-02-15

    A continuous calibration system for high voltage current transformers is presented in this paper. The sensor of this system is based on a kind of electronic instrument current transformer, which is a clamp-shape air core coil. This system uses an optical fiber transmission system for its signal transmission and power supply. Finally the digital integrator and fourth-order convolution window algorithm as error calculation methods are realized by the virtual instrument with a personal computer. It is found that this system can calibrate a high voltage current transformer while energized, which means avoiding a long calibrating period in the power system and the loss of power metering expense. At the same time, it has a wide dynamic range and frequency band, and it can achieve a high accuracy measurement in a complex electromagnetic field environment. The experimental results and the on-site operation results presented in the last part of the paper, prove that it can reach the 0.05 accuracy class and is easy to operate on site.

  16. High-Power Microwave Switch Employing Electron Beam Triggering

    SciTech Connect (OSTI)

    Jay L. Hirshfield

    2012-09-19

    A high-power active microwave pulse compressor is described that modulates the quality factor Q of the energy storage cavity by a new means involving mode conversion controlled by a triggered electron-beam discharge through a switch cavity. The electron beam is emitted from a diamond-coated molybdenum cathode. This report describes the principle of operation, the design of the switch, the configuration used for the test, and the experimental results. The pulse compressor produced output pulses with 140 - Ã?Â?165 MW peak power, power gain of 16 - 20, and pulse duration of 16 - 20 ns at a frequency of 11.43 GHz.

  17. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    SciTech Connect (OSTI)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  18. A Near State PWM Method With Reduced Switching Frequency And Reduced Common Mode Voltage

    E-Print Network [OSTI]

    Hava, Ahmet

    operation in AC-DC power converter applications, and supply high quality power in uninterruptible power supply AC-DC-AC power converter units. Pulse Width Modulation (PWM) is the standard approach to operate

  19. Effect of current compliance and voltage sweep rate on the resistive switching of HfO{sub 2}/ITO/Invar structure as measured by conductive atomic force microscopy

    SciTech Connect (OSTI)

    Wu, You-Lin Liao, Chun-Wei; Ling, Jing-Jenn

    2014-06-16

    The electrical characterization of HfO{sub 2}/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO{sub 2} surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO{sub 2}/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  20. Understanding and Improving High Voltage Vacuum Insulators for Microsecond Pulses

    SciTech Connect (OSTI)

    Javedani, J B; Goerz, D A; Houck, T L; Lauer, E J; Speer, R D; Tully, L K; Vogtlin, G E; White, A D

    2007-03-05

    High voltage insulation is one of the main areas of pulsed power research and development, and dielectric breakdown is usually the limiting factor in attaining the highest possible performance in pulsed power devices. For many applications the delivery of pulsed power into a vacuum region is the most critical aspect of operation. The surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This mode of breakdown, called surface flashover, imposes serious limitations on the power flow into a vacuum region. This is especially troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and for applications where relatively long pulses, on the order of several microseconds, are required. The goal of this project is to establish a sound fundamental understanding of the mechanisms that lead to surface flashover, and then evaluate the most promising techniques to improve vacuum insulators and enable high voltage operation at stress levels near the intrinsic bulk breakdown limits of the material. The approach we proposed and followed was to develop this understanding through a combination of theoretical and computation methods coupled with experiments to validate and quantify expected behaviors. In this report we summarize our modeling and simulation efforts, theoretical studies, and experimental investigations. The computational work began by exploring the limits of commercially available codes and demonstrating methods to examine field enhancements and defect mechanisms at microscopic levels. Plasma simulations with particle codes used in conjunction with circuit models of the experimental apparatus enabled comparisons with experimental measurements. The large scale plasma (LSP) particle-in-cell (PIC) code was run on multiprocessor platforms and used to simulate expanding plasma conditions in vacuum gap regions. Algorithms were incorporated into LSP to handle secondary electron emission from dielectric materials to enable detailed simulations of flashover phenomenon. Theoretical studies were focused on explaining a possible mechanism for anode initiated surface flashover that involves an electron avalanche process starting near the anode, not a mechanism involving bulk dielectric breakdown. Experiments were performed in Engineering's Pulsed Power Lab using an available 100-kV, 10-{micro}s pulse generator and vacuum chamber. The initial experiments were done with polyethylene insulator material in the shape of a truncated cone cut at +45{sup o} angle between flat electrodes with a gap of 1.0 cm. The insulator was sized so there were no flashovers or breakdowns under nominal operating conditions. Insulator flashover or gap closure was induced by introducing a plasma source, a tuft of velvet, in proximity to the insulator or electrode.

  1. A scalable silicon photonic chip-scale optical switch for high performance computing systems

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    A scalable silicon photonic chip-scale optical switch for high performance computing systems-scale optical switch for scalable interconnect network in high performance computing systems. The proposed

  2. Quasi-optical network analyzers and high-reliability RF MEMS switched capacitors

    E-Print Network [OSTI]

    Grichener, Alexander

    2011-01-01

    Chapter 3 High-Reliability RF MEMS Switched Capacitors 3.1Technology 1.2 RF MEMS Technology . . . . . . . . . . . . .Reliability High-Q Switched RF MEMS Capacitors” IEEE Int.

  3. Monolithic high voltage nonlinear transmission line fabrication process

    DOE Patents [OSTI]

    Cooper, G.A.

    1994-10-04

    A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

  4. High Temperature, High Voltage Fully Integrated Gate Driver Circuit |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡High HIGHofWasteDepartment of

  5. High Temperature, High Voltage Fully Integrated Gate Driver Circuit |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡High HIGHofWasteDepartment

  6. Active high-power RF switch and pulse compression system

    DOE Patents [OSTI]

    Tantawi, Sami G. (San Mateo, CA); Ruth, Ronald D. (Woodside, CA); Zolotorev, Max (Mountain View, CA)

    1998-01-01

    A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

  7. High performance RF MEMS metal-contact switches and switching networks

    E-Print Network [OSTI]

    Patel, Chirag D.; Patel, Chirag D.

    2012-01-01

    design, devel- oped for medium- power applications (5-10 W), was also used to implement compact switching

  8. Plasma Switch for High-Power Active Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay L. [Omega-P, Inc.] [Omega-P, Inc.

    2013-11-04

    Results are presented from experiments carried out at the Naval Research Laboratory X-band magnicon facility on a two-channel X-band active RF pulse compressor that employed plasma switches. Experimental evidence is shown to validate the basic goals of the project, which include: simultaneous firing of plasma switches in both channels of the RF circuit, operation of quasi-optical 3-dB hybrid directional coupler coherent superposition of RF compressed pulses from both channels, and operation of the X-band magnicon directly in the RF pulse compressor. For incident 1.2 ?s pulses in the range 0.63 ? 1.35 MW, compressed pulses of peak powers 5.7 ? 11.3 MW were obtained, corresponding to peak power gain ratios of 8.3 ? 9.3. Insufficient bakeout and conditioning of the high-power RF circuit prevented experiments from being conducted at higher RF input power levels.

  9. High power impulse magnetron sputtering: Current-voltage-timecharacteristics indicate the onset of sustained self-sputtering

    SciTech Connect (OSTI)

    Anders, Andre; Andersson, Joakim; Ehiasarian, Arutiun

    2007-08-03

    The commonly used current-voltage characteristics are foundinadequate for describing the pulsed nature of the high power impulsemagnetron sputtering (HIPIMS) discharge, rather, the description needs tobe expanded to current-voltage-time characteristics for each initial gaspressure. Using different target materials (Cu, Ti, Nb, C, W, Al, Cr) anda pulsed constant-voltage supply it is shown that the HIPIMS dischargestypically exhibit an initial pressure dependent current peak followed bya second phase that is power and material dependent. This suggests thatthe initial phase of a HIPIMS discharge pulse is dominated by gas ionswhereas the later phase has a strong contribution from self-sputtering.For some materials the discharge switches into a mode of sustainedself-sputtering. The very large differences between materials cannot beascribed to the different sputter yields but they indicate thatgeneration and trapping ofsecondary electrons plays a major role forcurrent-voltage-time characteristics. In particular, it is argued thatthe sustained self-sputtering phase is associated with thegeneration ofmultiply charged ions because only they can cause potential emission ofsecondary electrons whereas the yield caused by singly charged metal ionsis negligibly small.

  10. High voltage power supply with modular series resonant inverters

    DOE Patents [OSTI]

    Dreifuerst, G.R.; Merritt, B.T.

    1995-07-18

    A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360{degree}/n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit. 11 figs.

  11. High voltage power supply with modular series resonant inverters

    DOE Patents [OSTI]

    Dreifuerst, Gary R. (Livermore, CA); Merritt, Bernard T. (Livermore, CA)

    1995-01-01

    A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360.degree./n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit.

  12. Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

    SciTech Connect (OSTI)

    Maxson, Jared; Bazarov, Ivan; Dunham, Bruce; Dobbins, John; Liu, Xianghong; Smolenski, Karl

    2014-09-15

    A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. These results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.

  13. High Speed Networks A FAST ARBITRATION SCHEME FOR TERABIT PACKET SWITCHES

    E-Print Network [OSTI]

    Chao, Jonathan

    High Speed Networks A FAST ARBITRATION SCHEME FOR TERABIT PACKET SWITCHES H. Jonathan Chao, Cheuk H Abstract Input-output queued switches have been widely con- sidered as the most feasible solution for large capac- ity packet switches and IP routers. The challenge is to develop a high speed and cost

  14. Method and apparatus for connecting high voltage leads to a high temperature super-conducting transformer

    SciTech Connect (OSTI)

    Golner, Thomas M.; Mehta, Shirish P.

    2005-07-26

    A method and apparatus for connecting high voltage leads to a super-conducting transformer is provided that includes a first super-conducting coil set, a second super-conducting coil set, and a third super-conducting coil set. The first, second and third super-conducting coil sets are connected via an insulated interconnect system that includes insulated conductors and insulated connectors that are utilized to connect the first, second, and third super-conducting coil sets to the high voltage leads.

  15. High frequency AC power converter for low voltage circuits

    E-Print Network [OSTI]

    Salazar, Nathaniel Jay Tobias

    2012-01-01

    This thesis presents a novel AC power delivery architecture that is suitable for VHF frequency (50-100MHz) polyphase AC/DC power conversion in low voltage integrated circuits. A complete AC power delivery architecture was ...

  16. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Office of Scientific and Technical Information (OSTI)

    Voltage Solid Polymer Batteries for Electric Drive Vehicles Eitouni, Hany; Yang, Jin; Pratt, Russell; Wang, Xiao; Grape, Ulrik The purpose of this project was for Seeo to develop a...

  17. Radio-frequency powered glow discharge device and method with high voltage interface

    DOE Patents [OSTI]

    Duckworth, Douglas C. (Knoxville, TN); Marcus, R. Kenneth (Clemson, SC); Donohue, David L. (Vienna, AT); Lewis, Trousdale A. (Oak Ridge, TN)

    1994-01-01

    A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components.

  18. Radio-frequency powered glow discharge device and method with high voltage interface

    DOE Patents [OSTI]

    Duckworth, D.C.; Marcus, R.K.; Donohue, D.L.; Lewis, T.A.

    1994-06-28

    A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components. 11 figures.

  19. Senderovich 1 Electrode Design Adjustments to a High Voltage Electron Gun

    E-Print Network [OSTI]

    Hoffstaetter, Georg

    Senderovich 1 Electrode Design Adjustments to a High Voltage Electron Gun Igor Senderovich Abstract, a very high voltage electron gun needs to be designed.1 To these ends, several geometric parameters were were performed on off-axis electron acceleration. Introduction The design of the electrode gun has

  20. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  1. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    DOE Patents [OSTI]

    Murty, Balarama Vempaty (West Bloomfield, MI)

    2000-01-01

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  2. RF-MEMS capacitive switches with high reliability

    DOE Patents [OSTI]

    Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

    2013-09-03

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

  3. Triple voltage dc-to-dc converter and method

    DOE Patents [OSTI]

    Su, Gui-Jia (Knoxville, TN)

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  4. Proposal to Negotiate, without Competitive Tendering, a Blanket Order for High-Voltage Thyratrons for the CERN Accelerators

    E-Print Network [OSTI]

    2002-01-01

    This document concerns the supply of thyratrons to be used as high-voltage and high-current switches for the fast-pulsed magnet systems of the CERN accelerators and for the protection of the klystrons of RF systems. Following a market survey (MS-3136/SL/LHC) carried out among 18 firms in ten Member States, CERN entered into negotiations with one firm in one Member State. The Finance Committee is invited to agree to the negotiation, without competitive tendering, of a new blanket order with E2V TECHNOLOGIES (GB) for up to 800 000 pounds sterling to cover the supply of thyratrons for the years 2003, 2004 and 2005, subject to price revision for inflation for deliveries after 31 December 2003. At the present rate of exchange, this amount is equivalent to 1 855 000 Swiss francs. The firm has indicated the following distribution by country of the order value covered by this adjudication proposal: GB - 100%.

  5. Public Opinions of Building Additional High-Voltage Electric Power Lines

    E-Print Network [OSTI]

    Tesfatsion, Leigh

    Public Opinions of Building Additional High-Voltage Electric Power Lines A Report to the National-Voltage Electric Power Lines: A Report to the National Science Foundation and the Electric Power Research Center to build new power lines. Residents living in counties with planned routes for new transmission lines

  6. An ultra-low voltage high gain operational transconductance amplifier for biomedical

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    An ultra-low voltage high gain operational transconductance amplifier for biomedical applications that work at ultra low voltage power supply. Moreover, low power dissipation is essential in these systems dissipation is also proposed in [5]. Differential pairs are commonly used as input stages, in an ultra-low

  7. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, K.

    1983-08-09

    A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

  8. A High-Frequency Resonant Inverter Topology With Low-Voltage Stress

    E-Print Network [OSTI]

    Rivas, Juan M.

    This paper presents a new switched-mode resonant inverter, which we term the inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low ...

  9. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOE Patents [OSTI]

    Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O'Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  10. An AWGR based Low-Latency Optical Switch for Data Centers and High Performance Computing Systems

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    i An AWGR based Low-Latency Optical Switch for Data Centers and High Performance Computing Systems based optical switch for data centers and high performance computing systems that builds upon several for Data Centers and High Performance Computing Systems ..i ABSTRACT .....................................

  11. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    SciTech Connect (OSTI)

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  12. Princeton Power Systems (TRL 5 6 Component)- Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage

    Broader source: Energy.gov [DOE]

    Princeton Power Systems (TRL 5 6 Component) - Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage

  13. Current mode integrators and their applications in low-voltage high frequency CMOS signal processing 

    E-Print Network [OSTI]

    Smith, Sterling Lane

    1993-01-01

    Low voltage CMOS fully differential integrators for high frequency continuous-time filters using current-mode techniques are presented.. Current mode techniques are employed to avoid the use of the floating differential ...

  14. Applications of an Electrostatic High-Voltage Tether to Radiation Belt Remediation

    E-Print Network [OSTI]

    Applications of an Electrostatic High-Voltage Tether to Radiation Belt Remediation by Christopher F.1.1 Magnetic Mirrors and the Van Allen Belts........................... 10 1.1.2 The Loss Cone

  15. Vehicle Technologies Office Merit Review 2014: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles

    Broader source: Energy.gov [DOE]

    Presentation given by Seeo, Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high-voltage solid polymer...

  16. Neutron burst form a high-voltage discharge between palladium electrodes in D sub 2 gas

    SciTech Connect (OSTI)

    Kim, Y.E. . Dept. of Physics)

    1990-12-01

    In this paper a recent experimental observation of a neutron flux burst at a rate of 2 {times} 10{sup 4} times the background rate during a high ac voltage stimulation between two deuterated palladium electrodes in D{sub 2} gas is explained in terms of the experimentally measured deuterium-deuterium (D-D) fusion cross sections. Theoretical criteria and experimental conditions for improving D-D fusion rates with the use of pulsed high-dc voltages are described.

  17. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    SciTech Connect (OSTI)

    Sulaeman, M. Y.; Widita, R.

    2014-09-30

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of ?1.5 kV with falltime 3 ns and risetime 15 ns into a 50? load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  18. 12003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June 2003.

    E-Print Network [OSTI]

    Atiquzzaman, Mohammed

    12003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June Fu) School of Computer Science University of Oklahoma, Norman, OK 73019-6151. Email: atiq@ou.edu #12;22003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June 2003

  19. High Power Metal-Contact and Capacitive Switches with Stress Resilient Designs /

    E-Print Network [OSTI]

    Zareie, Hosein

    2013-01-01

    2.2 Switch Design . . . . . . . . . . . . . . . . . . . .5.2 Switch Design . . . . . . . . . . . .SPST Switch . . . . . . . . . . . . . . . . . . . . . . .

  20. TiN coated aluminum electrodes for DC high voltage electron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore »(Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (« less

  1. Low Voltage High Precision Spatial Light ModulatorsFinal Report

    SciTech Connect (OSTI)

    Papavasiliou, A P

    2005-02-09

    The goal of this project was to make LLNL a leader in Spatial Light Modulators (SLMs) by developing the technology that will be needed by the next generation of SLMs. We would use new lower voltage actuators and bond those actuators directly to controlling circuitry to break the fundamental limitations that constrain current SLM technology. This three-year project was underfunded in the first year and not funded in the second year. With the funding that was available, we produced actuators and designs for the controlling circuitry that would have been integrated in the second year. Spatial light modulators (SLMs) are arrays of tiny movable mirrors that modulate the wave-fronts of light. SLMs can correct aberrations in incoming light for adaptive optics or modulate light for beam control, optical communication and particle manipulation. MicroElectroMechanical Systems (MEMS) is a technology that utilizes the microfabrication tools developed by the semiconductor industry to fabricate a wide variety of tiny machines. The first generation of MEMS SLMs have improved the functionality of SLMs while drastically reducing per pixel cost making arrays on the order of 1000 pixels readily available. These MEMS SLMs however are limited by the nature of their designs to be very difficult to scale above 1000 pixels and have very limited positioning accuracy. By co-locating the MEMS mirrors with CMOS electronics, we will increase the scalability and positioning accuracy. To do this we will have to make substantial advances in SLM actuator design, and fabrication.

  2. Design of a fast-settling OTA for high frequency switched-capacitor applications 

    E-Print Network [OSTI]

    Park, Jinki

    2002-01-01

    The ever-growing technology has enabled switched-capacitor (SC) circuits to operate at the MHz frequency range. The equally increasing demand for high speed signal processing using SC technique dictates the need of high performance operational...

  3. Utilizing zero-sequence switchings for reversible converters

    DOE Patents [OSTI]

    Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

    2004-12-14

    A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

  4. Reliability of Capacitive RF MEMS Switches at High and Low Temperatures

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Reliability of Capacitive RF MEMS Switches at High and Low Temperatures Yong Zhu, Horacio D 60208-3111 Received 1 September 2003; accepted 24 February 2003 ABSTRACT: Some applications of RF MEMS temperatures in the range 60°C to 100°C are envisioned. The basic operation of a capacitive MEMS switch

  5. Soft switched high frequency ac-link converter 

    E-Print Network [OSTI]

    Balakrishnan, Anand Kumar

    2009-05-15

    Variable frequency drives typically have employed dc voltage or current links for power distribution between the input and output converters and as a means to temporarily store energy. The dc link based power conversion systems have several inherent...

  6. Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches

    E-Print Network [OSTI]

    Xie, Xiaoliang Sunney

    Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches Yajie Dong, Guihua Yu, Michael C. Mc/a-Si × Ag NW devices exhibit bistable switching between high (off) and low (on) resistance states with well-defined switching threshold voltages, on/off ratios greater than 104, and current rectification in the on state

  7. CREE: Making the Switch

    ScienceCinema (OSTI)

    Grider, David; Palmer, John

    2014-04-09

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  8. CREE: Making the Switch

    SciTech Connect (OSTI)

    Grider, David; Palmer, John

    2014-03-06

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  9. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect (OSTI)

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  10. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With LivermoreSustainable Land Lab TourSwitch Switch Run end at 6pm at

  11. Connecting Renewables Directly to the Grid: Resilient Multi-Terminal HVDC Networks with High-Voltage High-Frequency Electronics

    SciTech Connect (OSTI)

    2012-01-23

    GENI Project: GE is developing electricity transmission hardware that could connect distributed renewable energy sources, like wind farms, directly to the grid—eliminating the need to feed the energy generated through intermediate power conversion stations before they enter the grid. GE is using the advanced semiconductor material silicon carbide (SiC) to conduct electricity through its transmission hardware because SiC can operate at higher voltage levels than semiconductors made out of other materials. This high-voltage capability is important because electricity must be converted to high-voltage levels before it can be sent along the grid’s network of transmission lines. Power companies do this because less electricity is lost along the lines when the voltage is high.

  12. Automatic voltage imbalance detector

    DOE Patents [OSTI]

    Bobbett, Ronald E. (Los Alamos, NM); McCormick, J. Byron (Los Alamos, NM); Kerwin, William J. (Tucson, AZ)

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  13. Non-aqueous electrolyte for high voltage rechargeable magnesium batteries

    DOE Patents [OSTI]

    Doe, Robert Ellis; Lane, George Hamilton; Jilek, Robert E; Hwang, Jaehee

    2015-02-10

    An electrolyte for use in electrochemical cells is provided. The properties of the electrolyte include high conductivity, high Coulombic efficiency, and an electrochemical window that can exceed 3.5 V vs. Mg/Mg.sup.+2. The use of the electrolyte promotes the electrochemical deposition and dissolution of Mg without the use of any Grignard reagents, other organometallic materials, tetraphenyl borate, or tetrachloroaluminate derived anions. Other Mg-containing electrolyte systems that are expected to be suitable for use in secondary batteries are also described.

  14. High-Voltage Insulators and Components - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (JournalvivoHigh energy neutronHigh-Pressure MOFElectricity Transmission

  15. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, Ronald S. (Livermore, CA)

    1987-01-01

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  16. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, R.S.

    1985-08-05

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  17. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, R.S.

    1987-11-17

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile. 2 figs.

  18. Hybrid Design Optimization of High Voltage Pulse Transformers for Klystron Modulators

    E-Print Network [OSTI]

    Sylvain, Candolfi; Davide, Aguglia; Jerome, Cros

    2015-01-01

    This paper presents a hybrid optimization methodology for the design of high voltage pulse transformers used in klystron modulators. The optimization process is using simplified 2D FEA design models of the 3D transformer structure. Each intermediate optimal solution is evaluated by 3D FEA and correction coefficients of the 2D FEA models are derived. A new optimization process using 2D FEA models is then performed. The convergence of this hybrid optimal design methodology is obtained with a limited number of time consuming 3D FEA simulations. The method is applied to the optimal design of a monolithic high voltage pulse transformer for the CLIC klystron modulator.

  19. 20 MHz IF bandpass switched capacitor [] modulator using a high performance OTA with NCFF compensation scheme 

    E-Print Network [OSTI]

    Thandri, Bharath Kumar

    2001-01-01

    Switched capacitor (SC) circuits are widely used in many applications because of their accuracy and ease of integration in CMOS technology. They are not suitable for operation in high frequencies because of the settling time limitation of amplifiers...

  20. Demonstration of a hitless bypass switch using nanomechanical perturbation for high-bitrate transparent networks

    E-Print Network [OSTI]

    Chatterjee, Rohit

    We demonstrate an optical hitless bypass switch based on nanomechanical proximity perturbation for high-bitrate transparent networks. Embedded in a single-level ?-imbalanced Mach-Zehnder interferometer, the two ...

  1. Comparative evaluation of high-frequency Switched-Capacitor biquadratic filter structures 

    E-Print Network [OSTI]

    Zavaleta, Mauricio A.

    1987-01-01

    COMPARATIVE EVALUATION OF HIGH-FREQUENCY SWITCHED-CAPACITOR BIQUADRATIC FILTER STRUCTURES A Thesis by MAURICIO A. ZAVALETA Submitted to the Graduate College of Texas AkM University in partial fulfillment of the requirement for the degree... of MASTER OF SCIENCE December 1987 Major Subject: Electrical Engineering COMPARATIVE EVALUATION OF HIGH-FREQUENCY SWITCHED-CAPACITOR BIQUADRATIC FILTER STRUCTURES A Thesis by MAURICIO A. ZAVALETA Approved as to style and content by: Edgar Ssnchez...

  2. Optimizing performance per watt on GPUs in High Performance Computing: temperature, frequency and voltage effects

    E-Print Network [OSTI]

    Price, D C; Barsdell, B R; Babich, R; Greenhill, L J

    2014-01-01

    The magnitude of the real-time digital signal processing challenge attached to large radio astronomical antenna arrays motivates use of high performance computing (HPC) systems. The need for high power efficiency (performance per watt) at remote observatory sites parallels that in HPC broadly, where efficiency is an emerging critical metric. We investigate how the performance per watt of graphics processing units (GPUs) is affected by temperature, core clock frequency and voltage. Our results highlight how the underlying physical processes that govern transistor operation affect power efficiency. In particular, we show experimentally that GPU power consumption grows non-linearly with both temperature and supply voltage, as predicted by physical transistor models. We show lowering GPU supply voltage and increasing clock frequency while maintaining a low die temperature increases the power efficiency of an NVIDIA K20 GPU by up to 37-48% over default settings when running xGPU, a compute-bound code used in radio...

  3. Static reactive power compensators for high-voltage power systems. Final report

    SciTech Connect (OSTI)

    Not Available

    1981-04-01

    A study conducted to summarize the role of static reactive power compensators for high voltage power system applications is described. This information should be useful to the utility system planning engineer in applying static var systems (SVS) to high voltage as (HVAC) systems. The static var system is defined as a form of reactive power compensator. The general need for reactive power compensation in HVAC systems is discussed, and the static var system is compared to other devices utilized to provide reactive power compensation. Examples are presented of applying SVS for specific functions, such as the prevention of voltage collapse. The operating principles of commercially available SVS's are discussed in detail. The perormance and active power loss characteristics of SVS types are compared.

  4. Method of making high breakdown voltage semiconductor device

    DOE Patents [OSTI]

    Arthur, Stephen D. (Scotia, NY); Temple, Victor A. K. (Jonesville, NY)

    1990-01-01

    A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

  5. High Voltage Electrolyte for Lithium Batteries | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡HighApproaches | 03.25.2015DOE2 DOE

  6. High Voltage Electrolyte for Lithium Batteries | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡HighApproaches | 03.25.2015DOE2 DOE1

  7. Highline Pacific Northwests High-Voltage Transmission System

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (JournalvivoHigh energyHighland View school Highland ViewSeptember 2002

  8. On the Anomalous Weight Losses of High Voltage Symmetrical Capacitors

    E-Print Network [OSTI]

    Elio B. Porcelli; Victo S. Filho

    2015-02-21

    In this work, we analyzed an anomalous effect verified from symmetrical capacitor devices, working in very high electric potentials. The mastery of that effect could mean in the future the possible substitution of propulsion technology based on fuels by single electrical propulsion systems. From experimental measurements, we detected small variations of the device inertia that cannot be associated with known interactions, so that the raised force apparently has not been completely elucidated by current theories. We measured such variations within an accurate range and we proposed that the experimental results can be explained by relations like Clausius-Mossotti one, in order to quantify the dipole forces that appear in the devices. The values of the weight losses in the capacitors were calculated by means of the theoretical proposal and indicated good agreement with our experimental measurements for 7kV and with many other experimental works.

  9. Switching power supply

    DOE Patents [OSTI]

    Mihalka, A.M.

    1984-06-05

    The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

  10. Device for monitoring cell voltage

    SciTech Connect (OSTI)

    Doepke, Matthias; Eisermann, Henning

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  11. CONTROL SYSTEM FOR THE ORNL MULTICHARGED ION RESEARCH FACILITY HIGH-VOLTAGE PLATFORM

    E-Print Network [OSTI]

    -connected via Ethernet uti- lizing fiber optic transmission to bridge the different high voltage environments [1]. The ion source [2], designed and fab- ricated at CEA/Grenoble, produces intense dc beams of the control system are connected via Ethernet, with fiber optic transmission used to bridge the large

  12. Milligram-Scale High-Voltage Power Electronics for Piezoelectric Microrobots

    E-Print Network [OSTI]

    Wood, Robert

    of piezoelectric actuators in microrobotic applications, and demonstrating experimental realizations of sub-100mgMilligram-Scale High-Voltage Power Electronics for Piezoelectric Microrobots Michael Karpelson, Student Member, IEEE, Gu-Yeon Wei, Member, IEEE, Robert J. Wood, Member, IEEE Abstract-- Piezoelectric

  13. High-current variable-voltage rectifiers: state of the art topologies

    E-Print Network [OSTI]

    Noé, Reinhold

    , uninterruptible power supplies (UPS), inverters, wind power converters, DC power supplies and high-voltage DC Solanki1 , Norbert Fröhleke1, Joachim Böcker1, Andreas Averberg2, Peter Wallmeier2 1 Power Electronics and Electrical Drives, University of Paderborn, Paderborn, Germany 2 R&D, AEG Power Solutions GmbH, Warstein

  14. Interconnected High-Voltage Pulsed-Power Converters System Design for H? Ion Sources

    E-Print Network [OSTI]

    Aguglia, D

    2014-01-01

    This paper presents the design and experimental validations of a system of three new high-voltage (HV) pulsedpower converters for the H? sources. The system requires three pulsed voltages (50, 40, and 25 kV to ground) at 2-Hz repetition rate, for 700 ?s of usable flat-top. The solution presents ripplefree output voltages and minimal stored energy to protect the ion source from the consequences of arc events. Experimental results on the final full-scale prototype are presented. In case of short-circuit events, the maximal energy delivered to the source is in the Joule range. HV flat-top stability of 1% is experimentally achieved with a simple Proportional-Integral- Derivative regulation and preliminary tuned H? source (e.g., radio frequency control, gas injection, and so forth). The system is running since more than a year with no power converter failures and damage to the source.

  15. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, Kristian (Livermore, CA)

    1983-01-01

    A switching system for delivering pulses of power from a source (10) to a load (20) using a storage capacitor (C3) charged through a rectifier (D1, D2), and maintained charged to a reference voltage level by a transistor switch (Q1) and voltage comparator (12). A thyristor (22) is triggered to discharge the storage capacitor through a saturable reactor (18) and fractional turn saturable transformer (16) having a secondary to primary turn ratio N of n:l/n=n.sup.2. The saturable reactor (18) functions as a "soaker" while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor (C4) charges, and then switches to a low impedance state to dump the charge of the storage capacitor (C3) into the load through the coupling capacitor (C4). The transformer is comprised of a multilayer core (26) having two secondary windings (28, 30) tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes (32, 34) for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe (40) for a linear particle accelerator and capacitance of a pulse forming network (42). To hold off discharge of the capacitance until it is fully charged, a saturable core (44) is provided around the resistive beampipe (40) to isolate the beampipe from the capacitance (42) until it is fully charged.

  16. Soft-Switching High-Frequency AC-Link Universal Power Converters with Galvanic Isolation 

    E-Print Network [OSTI]

    Amirabadi, Mahshid

    2013-08-07

    be used in a variety of applications, including photovoltaic power generation, wind power generation, and electric vehicles. In these converters the link current and voltage are both alternating and their frequency can be high, which leads...

  17. High-Voltage Terminal Test of Test Stand for 1-MV Electrostatic Accelerator

    E-Print Network [OSTI]

    Park, Sae-Hoon

    2015-01-01

    The Korea Multipurpose Accelerator Complex (KOMAC) has been developing a 300-kV test stand for a 1-MV electrostatic accelerator ion source. The ion source and accelerating tube will be installed in a high-pressure vessel. The ion source in the high-pressure vessel is required to have a high reliability. The test stand has been proposed and developed to confirm the stable operating conditions of the ion source. The ion source will be tested at the test stand to verify the long-time operating conditions. The test stand comprises a 300-kV high-voltage terminal, a battery for the ion-source power, a 60-Hz inverter, 200-MHz RF power, a 5-kV extraction power supply, a 300-kV accelerating tube, and a vacuum system. The results of the 300-kV high-voltage terminal tests are presented in this paper.

  18. Low-Energy, High-Performance Lossless 8×8 SOA Switch

    E-Print Network [OSTI]

    Cheng, Q.; Wonfor, A.; Wei, J. L.; Penty, R. V.; White, I. H.

    2015-03-22

    /plain; charset=UTF-8 Low-Energy, High-Performance Lossless 8×8 SOA Switch Q. Cheng, A. Wonfor, J. L. Wei, R. V. Penty, I. H. White Centre for Photonic Systems, Electrical Division, Department of Engineering, University of Cambridge, Cambridge, United... capacity and energy consumption, both in the internet core and also within datacenters. Optical switch fabrics, which have been the subject of much research in recent years, are regarded as potential key components for meeting future communications...

  19. Proposal to negotiate, without competitive tendering, a blanket order for high-voltage thyratrons for the CERN accelerators

    E-Print Network [OSTI]

    1999-01-01

    This document concerns the supply of thyratrons to be used as high-voltage and high-current switches for the fast-pulsed magnet systems of the CERN accelerators and for the protection of the klystrons of RF systems. In June 1981 the Finance Committee approved the placing, without competitive tendering, of a blanket order with EEV Ltd (UK) for a total value of up to 2 000 000 Swiss francs to cover the supply of thyratrons for the years 1982, 1983 and 1984. New blanket orders were subsequently negotiated for three-year periods with the approval of the Finance Committee in 1984, 1987, 1990 and 1993. After a new market survey in 1995-1996 had confirmed that EEV Ltd is the sole manufacturer of such thyratrons in the CERN Member States, a new blanket order was negotiated in 1996 with the approval of the Finance Committee. The Finance Committee is invited to agree to the negotiation, without competitive tendering, of a new blanket order with EEV Ltd (UK) for up to 800 000 pounds sterling to cover the supply of thyra...

  20. TiN coated aluminum electrodes for DC high voltage electron guns

    SciTech Connect (OSTI)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-15

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached ?225?kV bias voltage while generating less than 100?pA of field emission (<10?pA) using a 40?mm cathode/anode gap, corresponding to field strength of 13.7?MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ?22.5 MV/m with field emission less than 100?pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  1. TiN coated aluminum electrodes for DC high voltage electron guns

    SciTech Connect (OSTI)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  2. High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications

    E-Print Network [OSTI]

    Chen, Xu

    2015-01-01

    efficient GaN HEMT boost converter with 300-W output power29 Figure 3.13. Half-bridge boost converterin a half-bridge boost converter circuit shown in figure

  3. High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications

    E-Print Network [OSTI]

    Chen, Xu

    2015-01-01

    layer quality, atomic layer deposition (ALD) is recentlyfollowed by Atomic Layer Deposition (ALD) of Al 2 O 3 as the

  4. Ultrashort pulse laser-triggering of long gap high voltage switches...

    Office of Scientific and Technical Information (OSTI)

    Bibtex Format Close 0 pages in this document matching the terms "" Search For Terms: Enter terms in the toolbar above to search the full text of this document for pages...

  5. Ultrashort pulse laser-triggering of long gap high voltage switches.

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaon and(Conference) |Article)

  6. Ultrashort pulse laser-triggering of long gap high voltage switches.

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaon and(Conference) |Article)(Technical Report) | SciTech Connect

  7. Voltage Converter TYPICAL APPLICATION

    E-Print Network [OSTI]

    Berns, Hans-Gerd

    1 LTC660 100mA CMOS Voltage Converter TYPICAL APPLICATION U s Simple Conversion of 5V to ­5V Supply s Output Drive: 100mA s ROUT: 6.5 (0.65V Loss at 100mA) s BOOST Pin (Pin 1) for Higher Switching Frequency-capacitor voltage converter. It performs supply voltage conversion from positive to negative from an input range

  8. Spintronic switches for ultra low energy global interconnects

    SciTech Connect (OSTI)

    Sharad, Mrigank Roy, Kaushik

    2014-05-07

    We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.

  9. CRYOGENIC LIFETIME TESTS ON A COMMERCIAL EPOXY RESIN HIGH VOLTAGE BUSHING

    SciTech Connect (OSTI)

    Schwenterly, S W [ORNL; Pleva, Ed [Waukesha Electric Systems, Waukesha, WI; Ha, Tam T [ORNL

    2012-01-01

    High-temperature superconducting (HTS) power devices operating in liquid nitrogen frequently require high-voltage bushings to carry the current leads from the superconducting windings to the room temperature grid connections. Oak Ridge National Laboratory is collaborating with Waukesha Electric Systems, SuperPower, and Southern California Edison to develop and demonstrate an HTS utility power transformer. Previous dielectric high voltage tests in support of this program have been carried out in test cryostats with commercial epoxy resin bushings from Electro Composites Inc. (ECI). Though the bushings performed well in these short-term tests, their long-term operation at high voltage in liquid nitrogen needs to be verified for use on the utility grid. Long-term tests are being carried out on a sample 28-kV-class ECI bushing. The bushing has a monolithic cast, cycloaliphatic resin body and is fire- and shatter-resistant. The test cryostat is located in an interlocked cage and is energized at 25 kVac around the clock. Liquid nitrogen (LN) is automatically refilled every 9.5 hours. Partial discharge, capacitance, and leakage resistance tests are periodically performed to check for deviations from factory values. At present, over 2400 hours have been accumulated with no changes in these parameters. The tests are scheduled to run for four to six months.

  10. A high voltage pulse power supply for metal plasma immersion ion implantation and deposition

    SciTech Connect (OSTI)

    Salvadori, M. C.; Teixeira, F. S.; Araujo, W. W. R.; Sgubin, L. G.; Sochugov, N. S.; Spirin, R. E.; Brown, I. G.

    2010-12-15

    We describe the design and implementation of a high voltage pulse power supply (pulser) that supports the operation of a repetitively pulsed filtered vacuum arc plasma deposition facility in plasma immersion ion implantation and deposition (Mepiiid) mode. Negative pulses (micropulses) of up to 20 kV in magnitude and 20 A peak current are provided in gated pulse packets (macropulses) over a broad range of possible pulse width and duty cycle. Application of the system consisting of filtered vacuum arc and high voltage pulser is demonstrated by forming diamond-like carbon (DLC) thin films with and without substrate bias provided by the pulser. Significantly enhanced film/substrate adhesion is observed when the pulser is used to induce interface mixing between the DLC film and the underlying Si substrate.

  11. Switching of emissivity and photoconductivity in highly doped Yb3+ and Lu2O3 ceramics

    E-Print Network [OSTI]

    Kouznetsov, Dmitrii

    Switching of emissivity and photoconductivity in highly doped Yb3+ :Y2O3 and Lu2O3 ceramics Jean bulk ceramics pumped at 940 nm wavelength. In contrast, when these materials are heated with a CO2- minescence properties of highly Yb3+ -doped 10% Lu2O3 and 15% and 20% Y2O3 polycrystalline ceramics14 pumped

  12. High-Voltage LED Light Engine with Integrated Driver | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancingR Walls - Building America Topa High BindingVoltage LED

  13. A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

    SciTech Connect (OSTI)

    None, None

    2012-01-31

    The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105?C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

  14. Safety of transformers, reactors, power supply units and similar products for supply voltages up to 1 100 V part 2-16 : particular requirements and tests for switch mode power supply units and transformers for switch mode power supply units

    E-Print Network [OSTI]

    International Electrotechnical Commission. Geneva

    2013-01-01

    Safety of transformers, reactors, power supply units and similar products for supply voltages up to 1 100 V

  15. High efficiency switching-mode amplifiers for wireless communication systems

    E-Print Network [OSTI]

    Hung, Tsai-Pi

    2008-01-01

    M. Asbeck, “Design of high-efficiency current-mode class-Dand G. Rabjohn, “A high efficiency Chireix Out- phasingE-A new class of high efficiency tuned single-ended power

  16. Marine High Voltage Power Conditioning and Transmission System with Integrated Storage DE-EE0003640 Final Report

    SciTech Connect (OSTI)

    Frank Hoffmann, PhD; Aspinall, Rik

    2012-12-10

    Design, Development, and test of the three-port power converter for marine hydrokinetic power transmission. Converter provides ports for AC/DC conversion of hydrokinetic power, battery storage, and a low voltage to high voltage DC port for HVDC transmission to shore. The report covers the design, development, implementation, and testing of a prototype built by PPS.

  17. Electric power high-voltage transmission lines: Design options, cost, and electric and magnetic field levels

    SciTech Connect (OSTI)

    Stoffel, J.B.; Pentecost, E.D.; Roman, R.D.; Traczyk, P.A.

    1994-11-01

    This report provides background information about (1) the electric and magnetic fields (EMFs) of high-voltage transmission lines at typical voltages and line configurations and (2) typical transmission line costs to assist on alternatives in environmental documents. EMF strengths at 0 {+-} 200 ft from centerline were calculated for ac overhead lines, and for 345 and 230-kV ac underground line and for a {+-}450-kV dc overhead line. Compacting and height sensitivity factors were computed for the variation in EMFs when line conductors are moved closer or raised. Estimated costs for the lines are presented and discussed so that the impact of using alternative strategies for reducing EMF strengths and the implications of implementing the strategies can be better appreciated.

  18. IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 25, NO. 7, JULY 2010 1761 A Soft Switching Scheme for Multiphase

    E-Print Network [OSTI]

    Mazumder, Sudip K.

    outlines a switching scheme to improve the energy efficiency for an isolated high-frequency multiphase dc the standpoints of cost, efficiency, and footprint. Index Terms--High efficiency, high-frequency link, isolated. It is more suitable for isolated low-voltage dc to three-phase high-voltage ac applications from

  19. Novel Nonflammable Electrolytes for Secondary Magnesium Batteries and High Voltage Electrolytes for Electrochemcial Supercapacitors

    SciTech Connect (OSTI)

    Dr. Brian Dixon

    2008-12-30

    Magnesium has been used successfully in primary batteries, but its use in rechargeable cells has been stymied by the lack of suitable non-aqueous electrolyte that can conduct Mg+2 species, combined with poor stripping and plating properties. The development of a suitable cathode material for rechargeable magnesium batteries has also been a roadblock, but a nonflammable electrolyte is key. Likewise, the development of safe high voltage electrochemical supercapaitors has been stymied by the use of flammable solvents in the liquid electrolyte; to wit, acetonitrile. The purpose of the research conducted in this effort was to identify useful compositions of magnesium salts and polyphosphate solvents that would enable magnesium ions to be cycled within a secondary battery design. The polyphosphate solvents would provide the solvent for the magnesium salts while preventing the electrolyte from being flammable. This would enable these novel electrolytes to be considered as an alternative to THF-based electrolytes. In addition, we explored several of these solvents together with lithium slats for use as high voltage electrolytes for carbon-based electrochemical supercapacitors. The research was successful in that: 1) Magnesium imide dissolved in a phosphate ester solvent that contains a halogented phosphate ester appears to be the preferred electrolyte for a rechargeable Mg cell. 2) A combination of B-doped CNTs and vanadium phosphate appear to be the cathode of choice for a rechargeable Mg cell by virtue of higher voltage and better reversibility. 3) Magnesium alloys appear to perform better than pure magnesium when used in combination with the novel polyphosphate electrolytes. Also, this effort has established that Phoenix Innovationâ??s family of phosphonate/phosphate electrolytes together with specific lithium slats can be used in supercapacitor systems at voltages of greater than 10V.

  20. A new class of high force, low-voltage, compliant actuation system

    SciTech Connect (OSTI)

    RODGERS,M. STEVEN; KOTA,SRIDHAR; HETRICK,JOEL; LI,ZHE; JENSEN,BRIAN D.; KRYGOWSKI,THOMAS W.; MILLER,SAMUEL L.; BARNES,STEPHEN MATTHEW; BURG,MICHAEL STANLEY

    2000-04-10

    Although many actuators employing electrostatic comb drives have been demonstrated in a laboratory environment, widespread acceptance in mass produced microelectromechanical systems (MEMS) may be limited due to issues associated with low drive force, large real estate demands, high operating voltages, and reliability concerns due to stiction. On the other hand, comb drives require very low drive currents, offer predictable response, and are highly compatible with the fabrication technology. The expand the application space and facilitate the widespread deployment of self-actuated MEMS, a new class of advanced actuation systems has been developed that maintains the highly desirable aspects of existing components, while significantly diminishing the issues that could impede large scale acceptance. In this paper, the authors will present low-voltage electrostatic actuators that offer a dramatic increase in force over conventional comb drive designs. In addition, these actuators consume only a small fraction of the chip area previously used, yielding significant gains in power density. To increase the stroke length of these novel electrostatic actuators, the authors have developed highly efficient compliant stroke amplifiers. The coupling of compact, high-force actuators with fully compliant displacement multipliers sets a new paradigm for highly integrated microelectromechanical systems.

  1. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    SciTech Connect (OSTI)

    BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-01

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>?A) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolished by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.

  2. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-01

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>?A) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore »by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

  3. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    SciTech Connect (OSTI)

    BastaniNejad, Mahzad Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-15

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (?nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>?A) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolished by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100?pA of field emission. The authors speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.

  4. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    SciTech Connect (OSTI)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  5. A narrow-band high-speed switched-capacitor sixth order bandpass ladder filter 

    E-Print Network [OSTI]

    Adut, Jozef

    2002-01-01

    In narrow-band high-speed switched-capacitor filters, the main limitation comes from the capacitance spread and from amplifier settling time. A secondary clock, that averages at an integer fraction of the main clock signal, is used to reduce...

  6. MODELING OF HIGH-POWER-FACTOR RECTIFIERS BASED ON SWITCHING CONVERTERS

    E-Print Network [OSTI]

    boost [l]and up/down (flyback, kuk, Sepic, etc.) converters [a]. The purpose of this paper is to present. Specific results are discussed in detail for boost and up/down converters, which are most frequently usedMODELING OF HIGH-POWER-FACTOR RECTIFIERS BASED ON SWITCHING CONVERTERS WITH NONLINEAR

  7. Why and how should innovative industries with high consumer switching costs be re-regulated?

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ). While most of the contributions on the subject focus on wholesale markets, retail price control and North (1986). Empirical and econometric evidence in retail markets of several network industries opened of the low penetration rate of cable in France possibly due to the high cost to retail consumers to switch

  8. 12003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June 2003.

    E-Print Network [OSTI]

    Atiquzzaman, Mohammed

    12003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June Mohammed Atiquzzaman School of Computer Science, University of Oklahoma, Norman, OK 73019-6151. Email: atiq.Atiquzzaman, Univ. of Oklahoma, June 2003. Queue Management Passive No preventive packet drop until buffer reaches

  9. A Mixed-SignalASIC Power-Factor-Correction(PFC) Controller for High Frequency Switching Rectifiers

    E-Print Network [OSTI]

    A Mixed-SignalASIC Power-Factor-Correction(PFC) Controller for High Frequency Switching Rectifiers power-stage interfacing should be simple with few components needed. To reduce design costs, very little design should be necessary to implement the con- troller using the most common power stages

  10. Analysis and Design of an Organic High Speed Digital Electro-Optic Switch

    E-Print Network [OSTI]

    Ali Akbar Wahedy Zarch; Hassan Kaatuzian; Ahmad Ajdarzadeh Oskouei; Ahmad Amjadi

    2007-05-09

    We have analyzed and designed an organic high speed digital optical switch (DOS) based on transverse electro-optic effect. In analysis section, we proposed a quantum photonic model (QPM) to explain linear electro-optic (EO) effect. This model interpret this effect by photon-electron interaction in attosecond regime. We simulate applied electric field on molecule and crystal by Monte-Carlo method in time domain. We show how a waveguide response to an optical signal with different wavelengths when a transverse electric field applied to the waveguide. In design section, we configure conceptually a 2 * 2 EO switch with full adiabatic coupler. In this DOS, we use a rib waveguides that its core has been constructed from NPP crystal. This switch is smaller at least to one-half of similar DOS in dimensions.

  11. Power conversion architecture for grid interface at high switching frequency

    E-Print Network [OSTI]

    Lim, Seungbum

    This paper presents a new power conversion architecture for single-phase grid interface. The proposed architecture is suitable for realizing miniaturized ac-dc converters operating at high frequencies (HF, above 3 MHz) and ...

  12. DC BUFFERING AND FLOATING CURRENT FOR A HIGH VOLTAGE IMB APPLICATION

    SciTech Connect (OSTI)

    J.L. Morrison

    2014-08-01

    An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

  13. A high voltage test stand for electron gun qualification for LINACs

    SciTech Connect (OSTI)

    Wanmode, Yashwant D.; Mulchandani, J.; Acharya, M.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam

    2011-07-01

    An electron gun lest stand has been developed at RRCAT. The test stand consists of a high voltage pulsed power supply, electron gun filament supply, grid supply, UHV system and electron gun current measurement system. Several electron guns developed indigenously were evaluated on this test stand. The shielding is provided for the electron gun set up. Electron gun tests can be tested upto 55 kV with pulse width of 15 microsecs and pulse repetition rates up to 200 Hz. The technical details of the subsystems are furnished and results of performance of the test stand have been reported in this paper. (author)

  14. The commercial development of water repellent coatings for high voltage transmission lines

    SciTech Connect (OSTI)

    Hunter, S. R.; Daniel, A.

    2013-10-31

    The purpose of the Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC and Southwire Company was to jointly develop a low cost, commercially viable, water-repellant anti-icing coating system for high voltage transmission lines. Icing of power lines and other structures caused by freezing rain events occurs annually in the United States, and leads to severe and prolonged power outages. These outages cause untold economic and personal distress for many American families and businesses. Researchers at the Department of Energy?s Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee have previously developed a set of superhydrophobic coatings with remarkable anti-icing properties that could potentially be sprayed or painted onto high-tension power lines and pylons. These coatings drastically reduce ice accumulation on these structures during freezing rain events. The project involved obtaining technical input, supplies and test high voltage cables from Southwire, along with the joint development of anti-icing coating techniques, which would result in a commercial license agreement between Southwire and ORNL, and potentially other companies requiring water repellent anti-icing coatings.

  15. High-output microwave detector using voltage-induced ferromagnetic resonance

    SciTech Connect (OSTI)

    Shiota, Yoichi Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2014-11-10

    We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque.

  16. Isolated and soft-switched power converter

    DOE Patents [OSTI]

    Peng, Fang Zheng (Knoxville, TN); Adams, Donald Joe (Knoxville, TN)

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  17. Power applications of high-temperature superconductivity: Variable speed motors, current switches, and energy storage for end use

    SciTech Connect (OSTI)

    Hawsey, R.A. [Oak Ridge National Lab., TN (United States); Banerjee, B.B.; Grant, P.M. [Electric Power Research Inst., Palo Alto, CA (United States)

    1996-08-01

    The objective of this project is to conduct joint research and development activities related to certain electric power applications of high-temperature superconductivity (HTS). The new superconductors may allow development of an energy-efficient switch to control current to variable speed motors, superconducting magnetic energy storage (SMES) systems, and other power conversion equipment. Motor types that were considered include induction, permanent magnet, and superconducting ac motors. Because it is impractical to experimentally alter certain key design elements in radial-gap motors, experiments were conducted on an axial field superconducting motor prototype using 4 NbTi magnets. Superconducting magnetic energy storage technology with 0.25--5 kWh stored energy was studied as a viable solution to short duration voltage sag problems on the customer side of the electric meter. The technical performance characteristics of the device wee assembled, along with competing technologies such as active power line conditioners with storage, battery-based uninterruptible power supplies, and supercapacitors, and the market potential for SMES was defined. Four reports were prepared summarizing the results of the project.

  18. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    SciTech Connect (OSTI)

    Dinetta, L.C.; Hannon, M.H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

  19. Transverse flowing liquid Kerr cell for high average power laser Q-switching and for direct modulation of high power laser beams.

    DOE Patents [OSTI]

    Comaskey, Brian J.

    2004-12-07

    A fluid flow concept is applied in an optical apparatus to define a high gain stand-off, fast electro-optical q-switch which is highly impervious to high average power optical loads.

  20. Performance Characteristics of the Reduced Common Mode Voltage Near State PWM Method EPE Journal Vol. 19 no

    E-Print Network [OSTI]

    Hava, Ahmet

    Vol. 19 no 3 September 2009 41 Introduction Most AC induction and permanent magnet machines approach to operate the inverter switches in order to generate the required output voltages [1 be obtained with rather smaller IGBT gate resistances), and high DC bus voltage levels, the CMVs generated

  1. A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

    SciTech Connect (OSTI)

    Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

    2014-01-01

    Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

  2. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  3. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  4. Atmospheric pressure plasma jet with high-voltage power supply based on piezoelectric transformer

    SciTech Connect (OSTI)

    Babij, Micha?; Kowalski, Zbigniew W. Nitsch, Karol; Gotszalk, Teodor; Silberring, Jerzy

    2014-05-15

    The dielectric barrier discharge plasma jet, an example of the nonthermal atmospheric pressure plasma jet (APPJ), generates low-temperature plasmas that are suitable for the atomization of volatile species and can also be served as an ionization source for ambient mass and ion mobility spectrometry. A new design of APPJ for mass spectrometry has been built in our group. In these plasma sources magnetic transformers (MTs) and inductors are typically used in power supplies but they present several drawbacks that are even more evident when dealing with high-voltage normally used in APPJs. To overcome these disadvantages, high frequency generators with the absence of MT are proposed in the literature. However, in the case of miniaturized APPJs these conventional power converters, built of ferromagnetic cores and inductors or by means of LC resonant tank circuits, are not so useful as piezoelectric transformer (PT) based power converters due to bulky components and small efficiency. We made and examined a novel atmospheric pressure plasma jet with PT supplier served as ionization source for ambient mass spectrometry, and especially mobile spectrometry where miniaturization, integration of components, and clean plasma are required. The objective of this paper is to describe the concept, design, and implementation of this miniaturized piezoelectric transformer-based atmospheric pressure plasma jet.

  5. High-performance and power-efficient 2${\\times}$2 optical switch on Silicon-on-Insulator

    E-Print Network [OSTI]

    Han, Zheng; Checoury, Xavier; Bourderionnet, Jérôme; Boucaud, Philippe; De Rossi, Alfredo; Combrié, Sylvain

    2015-01-01

    A compact (15{\\mu}m${\\times}${\\mu}m) and highly-optimized 2${\\times}$2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1dB, static and dynamic contrast are 40dB and >20dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 {\\mu}s.

  6. A Low Voltage, Rail-to-Rail, Class AB CMOS Amplifier With High Drive and Low Output Impedance Characteristics

    E-Print Network [OSTI]

    Rincon-Mora, Gabriel A.

    1 A Low Voltage, Rail-to-Rail, Class AB CMOS Amplifier With High Drive and Low Output Impedance describes a CMOS rail-to-rail class AB operational amplifier designed to have extremely low output impedance. The source follower ensures low output impedance, which enables it to drive relatively large load capacitors

  7. 3430 IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY, VOL. 61, NO. 8, OCTOBER 2012 Experimental Validation of High-Voltage-Ratio

    E-Print Network [OSTI]

    Simões, Marcelo Godoy

    for high-voltage input/output ratio of dc-dc boost converters to be connected between the FC to the motor drive dc-link. In addition, it is necessary to have low input ripple at the dc-dc boost converter in order to maximize the FC lifetime, and the traditional dc-dc boost converter topologies have poor

  8. A three-level buck converter to regulate a high-voltage DC-to-AC inverter

    E-Print Network [OSTI]

    Schrock, Kenneth C

    2008-01-01

    A three-level buck converter is designed and analyzed, and shown to be suitable as a high-voltage down converter as a pre-regulation stage for a 600 watt DC-to-AC power inverter. Topology selection for the inverter is ...

  9. Tactile Switch (SMD) B3FS1138 Tactile Switch (SMD)

    E-Print Network [OSTI]

    Berns, Hans-Gerd

    Tactile Switch (SMD) B3FS1138 Tactile Switch (SMD) B3FS Surface-mounting Switches Ideal for High mechanism that ensures sharp switching operations D 3 actuator heights for design flexibility D Ro,000 pieces. For the packing style, refer to Key Switch Packing under Precautions section. Important Note

  10. Effect of MOSFET threshold voltage variation on high-performance circuits

    E-Print Network [OSTI]

    Narendra, Siva G. (Siva Gurusami), 1971-

    2002-01-01

    The driving force for the semiconductor industry growth has been the elegant scaling nature of CMOS technology. In future CMOS technology generations, supply and threshold voltages will have to continually scale to sustain ...

  11. Compact Low-Voltage, High-Power, Multi-beam Klystron for ILC: Initial Test Results

    E-Print Network [OSTI]

    Teryaev, V E; Kazakov, S Yu; Hirshfield, J L; Ives, R L; Marsden, D; Collins, G; Karimov, R; Jensen, R

    2015-01-01

    Initial test results of an L-band multi-beam klystron with parameters relevant for ILC are presented. The chief distinction of this tube from MBKs already developed for ILC is its low operating voltage of 60 kV, a virtue that implies considerable technological simplifications in the accelerator complex. To demonstrate the concept underlying the tubes design, a six-beamlet quadrant (a 54 inch high one-quarter portion of the full 1.3 GHz tube) was built and recently underwent initial tests, with main goals of demonstrating rated gun perveance, rated gain, and at least one-quarter of the full 10-MW rated power. Our initial three-day conditioning campaign without RF drive (140 microsec pulses @ 60 Hz) was stopped at 53% of full rated duty because of time-limits at the test-site; no signs appeared that would seem to prevent achieving full duty operation (i.e., 1.6 msec pulses @ 10 Hz). The subsequent tests with 10-15 microsec RF pulses confirmed the rated gain, produced output powers of up to 2.86 MW at 60 kV with...

  12. Assessment of research directions for high-voltage direct-current power systems. Final report

    SciTech Connect (OSTI)

    Long, W F

    1982-09-01

    High voltage direct current (HVDC) power transmission continues to be an emerging technology nearly thirty years after its introduction into modern power systems. To date its use has been restricted to either specialized applications having identifiable economic advantages (e.g., breakeven distance) or, rarely, applications where decoupling is needed. Only recently have the operational advantages (e.g., power modulation) of HVDC been realized on operating systems. A research project whose objective was to identify hardware developments and, where appropriate, system applications which can exemplify cost and operational advantages of integrated ac/dc power systems is discussed. The three principal tasks undertaken were: assessment of equipment developments; quantification of operational advantages; and interaction with system planners. Interest in HVDC power transmission has increased markedly over the past several years, and many new systems are now being investigated. The dissemination of information about HVDC, including specifically the symposium undertaken for Task 3, is a critical factor in fostering an understanding of this important adjunct to ac power transmission.

  13. High-Power Plasma Switch for 11.4 GHz Microwave Pulse Compressor

    SciTech Connect (OSTI)

    Jay L. Hirshfield

    2010-03-04

    Results obtained in several experiments on active RF pulse compression at X-band using a magnicon as the high-power RF source are presented. In these experiments, microwave energy was stored in high-Q TE01 and TE02 modes of two parallel-fed resonators, and then discharged using switches activated with rapidly fired plasma discharge tubes. Designs and high-power tests of several versions of the compressor are described. In these experiments, coherent pulse superposition was demonstrated at a 5–9 MW level of incident power. The compressed pulses observed had powers of 50–70 MW and durations of 40–70 ns. Peak power gains were measured to be in the range of 7:1–11:1 with efficiency in the range of 50–63%.

  14. High Power Metal-Contact and Capacitive Switches with Stress Resilient Designs /

    E-Print Network [OSTI]

    Zareie, Hosein

    2013-01-01

    Cycles,” Journal of Microelectromechanical Systems, vol. 22,performance,” Journal of Microelectromechanical Sys- tems,Scale Packaged RF Microelectromechanical Switches,” IEEE

  15. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    SciTech Connect (OSTI)

    Yeckel, Christopher; Curry, Randy

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  16. FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS

    E-Print Network [OSTI]

    Deng, Xunming

    FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix. INTRODUCTION A-Si:H single-junction solar cells

  17. Multilevel cascade voltage source inverter with separate DC sources

    DOE Patents [OSTI]

    Peng, F.Z.; Lai, J.S.

    1997-06-24

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

  18. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng (Oak Ridge, TN); Lai, Jih-Sheng (Knoxville, TN)

    1997-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  19. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng; Lai, Jih-Sheng

    2001-04-03

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  20. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng (Knoxville, TN); Lai, Jih-Sheng (Blacksburg, VA)

    2002-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  1. A combinatorial histidine scanning library approach to engineer highly pH-dependent protein switches

    SciTech Connect (OSTI)

    Murtaugh, Megan L.; Fanning, Sean W.; Sharma, Tressa M.; Terry, Alexandra M.; Horn, James R. (NIU)

    2012-09-05

    There is growing interest in the development of protein switches, which are proteins whose function, such as binding a target molecule, can be modulated through environmental triggers. Efforts to engineer highly pH sensitive protein-protein interactions typically rely on the rational introduction of ionizable groups in the protein interface. Such experiments are typically time intensive and often sacrifice the protein's affinity at the permissive pH. The underlying thermodynamics of proton-linkage dictate that the presence of multiple ionizable groups, which undergo a pK{sub a} change on protein binding, are necessary to result in highly pH-dependent binding. To test this hypothesis, a novel combinatorial histidine library was developed where every possible combination of histidine and wild-type residue is sampled throughout the interface of a model anti-RNase A single domain VHH antibody. Antibodies were coselected for high-affinity binding and pH-sensitivity using an in vitro, dual-function selection strategy. The resulting antibodies retained near wild-type affinity yet became highly sensitive to small decreases in pH, drastically decreasing their binding affinity, due to the incorporation of multiple histidine groups. Several trends were observed, such as histidine 'hot-spots,' which will help enhance the development of pH switch proteins as well as increase our understanding of the role of ionizable residues in protein interfaces. Overall, the combinatorial approach is rapid, general, and robust and should be capable of producing highly pH-sensitive protein affinity reagents for a number of different applications.

  2. Low-Power Technology Mapping for FPGA Architectures with Dual Supply Voltages

    E-Print Network [OSTI]

    He, Lei

    in supply voltage is applied only to non-critical paths can save power without sacrificing performance. It showed that the low Vdd could always be set at a 0.6-0.7 range of the high Vdd to minimize power was to hide the nodes of high-switching activity into LUTs so the overall dynamic power was reduced. In our

  3. Graphene-oxide-coated LiNi0.5Mn1.5O4 as high voltage cathode for lithium ion batteries with high energy

    E-Print Network [OSTI]

    Zhou, Chongwu

    Graphene-oxide-coated LiNi0.5Mn1.5O4 as high voltage cathode for lithium ion batteries with high Since Sony rst commercialized lithium ion batteries in the early 1990s, the market for lithium ion of the great success of lithium ion battery technology developed for portable electronic devices, higher

  4. Vacuum-surface flashover switch with cantilever conductors

    DOE Patents [OSTI]

    Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Kirbie, Hugh C. (Dublin, CA)

    2001-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  5. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more »V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

  6. Application of Wavelets and Generalized Pencil-Of-Function Method for the Extraction of Noise Current Spectrum and Simulation of Simultaneous Switching

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    . Introduction With increasing clock speeds and decreasing supply voltages, the design of the Power Distribution are generated by simultaneous switching of numerous CMOS circuits powered by the PDS. When thousands of drivers Switching Noise (SSN) in a PDS is an important issue in high frequency digital design. Another area where

  7. Solid state switch

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  8. Calculation and measurement of a neutral air flow velocity impacting a high voltage capacitor with asymmetrical electrodes

    SciTech Connect (OSTI)

    Malík, M., E-mail: michal.malik@tul.cz; Primas, J.; Kopecký, V.; Svoboda, M. [Faculty of Mechatronics, Informatics and Interdisciplinary Studies, Technical University of Liberec, Liberec, 461 17 (Czech Republic)] [Faculty of Mechatronics, Informatics and Interdisciplinary Studies, Technical University of Liberec, Liberec, 461 17 (Czech Republic)

    2014-01-15

    This paper deals with the effects surrounding phenomenon of a mechanical force generated on a high voltage asymmetrical capacitor (the so called Biefeld-Brown effect). A method to measure this force is described and a formula to calculate its value is also given. Based on this the authors derive a formula characterising the neutral air flow velocity impacting an asymmetrical capacitor connected to high voltage. This air flow under normal circumstances lessens the generated force. In the following part this velocity is measured using Particle Image Velocimetry measuring technique and the results of the theoretically calculated velocity and the experimentally measured value are compared. The authors found a good agreement between the results of both approaches.

  9. A highly scalable fully non-blocking silicon photonic switch fabric

    E-Print Network [OSTI]

    Nikolova, Dessislava; Liu, Yang; Rumley, Sebastien; Novack, Ari; Baehr-Jones, Tom; Hochberg, Michael; Bergman, Keren

    2016-01-01

    Large port count spatial optical switches will facilitate flexible and energy efficient data movement in future data communications systems, especially if they are capable of nanosecond-order reconfiguration times. In this work, we demonstrate an 8x8 microring-based silicon photonic switch with software controlled switching. The proposed switch architecture is modular as it assembles multiple identical components with multiplexing/demultiplexing functionalities. The switch is fully non-blocking, has path independent insertion loss, low crosstalk and is straightforward to control. A scalability analysis shows that this architecture can scale to very large port counts. This work represents the first demonstration of real-time firmware controlled switching with silicon photonics devices integrated at the chip scale.

  10. Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

    SciTech Connect (OSTI)

    Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai; Tang, Kai; Liu, Zhi-jie; Wang, Sen

    2013-05-13

    Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

  11. The laser switched linac and development of a high brilliance electron source

    SciTech Connect (OSTI)

    Melissinos, A.C.; Bamber, C.; Blalock, T.; Fry, A.; Wilson, T.

    1991-09-01

    This task originated in 1987 to explore the possibility of accelerating short bursts of electrons by pulsed power. The principal effort of our group was to demonstrate that electrons can be accelerated by picosecond-long electrical pulses which are compressed in a radial transmission line. This goal has new been achieved and our results are presented in this paper. We have achieved a gradient of 45 MV/m across a 250 {mu}m accelerating gap and have accelerated 10{sup 6} electrons in a 1 ps long pulse. The beam emerges from a 500 {mu}m hole and can be refocused to this transverse dimension. The efficiency of the system, is of order {eta} = 2 {times} 10{sup {minus}6} due to the small number of electrons accelerated. If we identify the gap spacing with one half wavelength of the accelerating r.f.,''our device is equivalent to a 600 GHz structure. The principal limitation in the accelerating gradient comes from the H.V. hold-off properties of the semiconductor disks that are used as photoconductive switches. We believe that with better materials a factor of 10 can be gained in the gradient. Similarly, the electron yield can be increased by at least three orders of magnitude if proper photocathodes are used in place of the metallic surface. The more difficult problem is the engineering of a multicell structure using our present design of the single cell. Our plans for the continuation of this work are given. One of the most promising applications of laser switched acceleration is in the operation of a very low emittance electron source. Thus we have turned our attention to this subject, and in particular to building a high brilliance electron source using a superconducting cavity. Also discussed is the possibility of picosecond x-ray sources.

  12. Packaged X-band Phased-Arrays and High Data-Rate Switching Matrices in Advanced CMOS Processes

    E-Print Network [OSTI]

    Shin, Donghyup

    multiplexer-based switching matrices for low power design.based switching matrices for low power designs. Appendix A 2

  13. Providing quality of service over high speed electronic and optical switches

    E-Print Network [OSTI]

    Koksal, Can Emre, 1975-

    2003-01-01

    In a network, multiple links are interconnected by means of switches. A switch is a device with multiple input and output links, and its job is to move data from the input links to the output links. In this thesis, we focus ...

  14. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, R.; Kotter, D.

    1994-04-26

    An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

  15. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, Richard (Ammon, ID); Kotter, Dale (Bingham County, ID)

    1994-01-01

    An optical voltage reference for providing an alternative to a battery source. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function.

  16. A High Bandwidth, Bypass, Transient-Mode SigmaDelta DCDC Switching Boost Regulator with Wide LC Compliance

    E-Print Network [OSTI]

    Rincon-Mora, Gabriel A.

    compensation circuit. However, sliding-mode boost DC-DC converters designed to tolerate wide LC variations proposes a switching boost converter with a high bandwidth, bypass, path that yields fast transient of boost converters [2] and the resulting instability, the above requirement is more pronounced

  17. Voltage Regulation PHYS 309 Name

    E-Print Network [OSTI]

    Herman, Rhett

    an regulated output of 5. It will also put out up to 1.5 yielding a power of 7.5. Obviously there are some LED circuits is to be used as a switch. Use 6 identical LEDs in this circuit. Use a multimeter to check that the LEDs all activate at the same voltage. Record the value of the LED voltage and your Zener

  18. A Transformer-less Partial Power Boost Converter for PV Applications Using a Three-Level Switching Cell

    SciTech Connect (OSTI)

    Mohammed Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Somasundaram Essakiappan

    2013-03-01

    Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semiconductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.

  19. Feasibility of gate-turnoff thyristors in a high-voltage direct-current transmission system: Final report

    SciTech Connect (OSTI)

    McMurray, W.

    1987-08-01

    This study to identify potentially attractive applications for gate-turnoff thyristor (GTO) converters in utility systems includes both high-voltage direct-current (HVDC) valves and static volt-ampere reactive (VAR) controllers. The work includes a broad review of basic principles and the power circuit arrangements that are judged to be most attractive. The major differences between ordinary thyristors and GTO converters are discussed, including alternative HVDC transmission systems and static VAR controllers that are possible with GTOs. Whereas a current-source type of converter is the obvious choice with ordinary thyristors, the use of GTOs allows either current-source or voltage-source converters to be considered. A computer-aided analysis of the basic 6-pulse GTO current-source converter system is presented, including general equations for steady-state operation and plotting calculated waveforms. An analysis of a GTO voltage-source converter is given in less detail. Due to incomplete performance data, unresolved critical problems such as protection, and the disadvantages of higher cost, complexity and losses, it is difficult to recommend a specific GTO converter system at this time. The major advantage that GTO converters can offer is rapid and smoothly continuous control of reactive power. Further development of GTO converters should be aimed towards an application where reactive power control is very important and not readily achievable by conventional methods. 12 refs., 47 figs.

  20. Analysis of system wide distortion in an integrated power system utilizing a high voltage DC bus and silicon carbide power devices

    E-Print Network [OSTI]

    Fallier, William F. (William Frederick)

    2007-01-01

    This research investigates the distortion on the electrical distribution system for a high voltage DC Integrated Power System (IPS). The analysis was concentrated on the power supplied to a propulsion motor driven by an ...

  1. An accurate online calibration system based on combined clamp-shape coil for high voltage electronic current transformers

    SciTech Connect (OSTI)

    Li, Zhen-hua; Li, Hong-bin; Zhang, Zhi [CEEE of Huazhong University of Science and Technology, Wuhan 430074 (China) [CEEE of Huazhong University of Science and Technology, Wuhan 430074 (China); State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Wuhan 430074 (China)

    2013-07-15

    Electronic transformers are widely used in power systems because of their wide bandwidth and good transient performance. However, as an emerging technology, the failure rate of electronic transformers is higher than that of traditional transformers. As a result, the calibration period needs to be shortened. Traditional calibration methods require the power of transmission line be cut off, which results in complicated operation and power off loss. This paper proposes an online calibration system which can calibrate electronic current transformers without power off. In this work, the high accuracy standard current transformer and online operation method are the key techniques. Based on the clamp-shape iron-core coil and clamp-shape air-core coil, a combined clamp-shape coil is designed as the standard current transformer. By analyzing the output characteristics of the two coils, the combined clamp-shape coil can achieve verification of the accuracy. So the accuracy of the online calibration system can be guaranteed. Moreover, by employing the earth potential working method and using two insulating rods to connect the combined clamp-shape coil to the high voltage bus, the operation becomes simple and safe. Tests in China National Center for High Voltage Measurement and field experiments show that the proposed system has a high accuracy of up to 0.05 class.

  2. High Power Metal-Contact and Capacitive Switches with Stress Resilient Designs /

    E-Print Network [OSTI]

    Zareie, Hosein

    2013-01-01

    1.1: Di?erent MEMS devices: (a) accelerometer sensor, (b)1.1: Di?erent MEMS devices: (a) accelerometer sensor, (b)MEMS switch technology & control IC in standard plastic packages,” IEEE Sensors,

  3. Switching processes in TGS crystals irradiated by high-current electron beam

    E-Print Network [OSTI]

    Efimov, V V; Klevtsova, E A; Tyutyunnikov, S I

    2002-01-01

    The relaxation processes study of the dielectric permittivity epsilon during commutation of the external electric field in triglycine sulphate (NH sub 2 CH sub 2 COOH) sub 3 centre dot H sub 2 SO sub 4 (TGS) single crystal plates before and after irradiation by a high-current pulsed electron beam with different doses at various temperatures is presented. The parameters of the electron beam produced by the accelerator facility as a source were: energy E = 250 keV, current density I = 1000 A/cm sup 2 , fluence F = 15 J/cm sup 2 , pulse duration tau = 300 ns, beam density 5 centre dot sup 1 5 electrons/cm sup 2 per pulse. It was shown that the dependences of epsilon (t) are described by the Kohlrausch law: epsilon (t) approx exp (-t/tau) supalpha, where alpha is the average relaxation time of the all volume samples, 0 < alpha <1. Besides, it was found that switching processes in the irradiated crystals were much more intensive than those in the non-irradiated ones. The relaxation times decrease with rising...

  4. Microsecond gain-switched master oscillator power amplifier (1958 nm) with high pulse energy

    SciTech Connect (OSTI)

    Ke Yin; Weiqiang Yang; Bin Zhang; Ying Li; Jing Hou [College of Opto-electric Science and Engineering, National University of Defense Technology, Changsha 410073, Hunan (China)

    2014-02-28

    An all-fibre master oscillator power amplifier (MOPA) emitting high-energy pulses at 1958 nm is presented. The seed laser is a microsecond gain-switched thulium-doped fibre laser (TDFL) pumped with a commercial 1550-nm pulsed fibre laser. The TDFL operates at a repetition rate f in the range of 10 to 100 kHz. The two-stage thulium-doped fibre amplifier is built to scale the energy of the pulses generated by the seed laser. The maximum output pulse energy higher than 0.5 mJ at 10 kHz is achieved which is comparable with the theoretical maximum extractable pulse energy. The slope efficiency of the second stage amplifier with respect to the pump power is 30.4% at f = 10 kHz. The wavelength of the output pulse laser is centred near 1958 nm at a spectral width of 0.25 nm after amplification. Neither nonlinear effects nor significant amplified spontaneous emission (ASE) is observed in the amplification experiments. (lasers)

  5. Study of static reactive power compensators for high-voltage power systems. Final report, May 12, 1981

    SciTech Connect (OSTI)

    Byerly, R.T.; Bennon, R.J.; Taylor, E.R. Jr.; Poznaniak, D.T.

    1981-05-12

    A general study of the application of static VAR compensators (SVC's) to high-voltage transmission systems has been performed. Considerable emphasis has been placed on improvements to synchronous stability, and it is shown that SVC's can provide significant benefits in terms of damping for unstable modes of oscillation and increases in transient stability limits. This report includes descriptions of static VAR compensators, technical and economic comparisons of different compensators, compensator models for system studies, comprehensive study procedures, study results for two small-scale systems, and guidelines for SVC application.

  6. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    could accelerate the adoption of energy-efficient GaN-based lighting and high-voltage power switching devices, ignite new market applications, and reduce U.S. power...

  7. Improving the performance of stainless-steel DC high voltage photoelectron gun cathode electrodes via gas conditioning with helium or krypton

    SciTech Connect (OSTI)

    Bastaninejad, Mahzad; Elmustafa, Abdelmageed; Forman, Eric I.; Clark, James; Covert, Steven R.; Grames, Joseph M.; Hansknecht, John C.; Hernandez-Garcia, Carlos; Poelker, Bernard; Suleiman, Riad S.

    2014-10-01

    Gas conditioning was shown to eliminate field emission from cathode electrodes used inside DC high voltage photoelectron guns, thus providing a reliable means to operate photoguns at higher voltages and field strengths. Measurements and simulation results indicate that gas conditioning eliminates field emission from cathode electrodes via two mechanisms: sputtering and implantation, with the benefits of implantation reversed by heating the electrode. We have studied five stainless steel electrodes (304L and 316LN) that were polished to approximately 20 nm surface roughness using diamond grit, and evaluated inside a high voltage apparatus to determine the onset of field emission as a function of voltage and field strength. The field emission characteristics of each electrode varied significantly upon the initial application of voltage but improved to nearly the same level after gas conditioning using either helium or krypton, exhibiting less than 10 pA field emission at ?225 kV bias voltage with a 50 mm cathode/anode gap, corresponding to a field strength of ~13 MV/m. Field emission could be reduced with either gas, but there were conditions related to gas choice, voltage and field strength that were more favorable than others.

  8. Modeling, simulation, and testing of the mechanical dynamics of and RF MEMS switch.

    SciTech Connect (OSTI)

    Sumali, Hartono; Epp, David S.; Massad, Jordan Elias; Dyck, Christopher William; Starr, Michael James

    2005-07-01

    Mechanical dynamics can be a determining factor for the switching speed of radio-frequency microelectromechanical systems (RF MEMS) switches. This paper presents the simulation of the mechanical motion of a microswitch under actuation. The switch has a plate suspended by springs. When an electrostatic actuation is applied, the plate moves toward the substrate and closes the switch. Simulations are calculated via a high-fidelity finite element model that couples solid dynamics with electrostatic actuation. It incorporates non-linear coupled dynamics and accommodates fabrication variations. Experimental modal analysis gives results in the frequency domain that verifies the natural frequencies and mode shapes predicted by the model. An effective 1D model is created and used to calculate an actuation voltage waveform that minimizes switch velocity at closure. In the experiment, the switch is actuated with this actuation voltage, and the displacements of the switch at various points are measured using a laser Doppler velocimeter through a microscope. The experiments are repeated on several switches from different batches. The experimental results verify the model.

  9. Studies on the switching speed effect of the phase shift keying in SLED for generating high power microwave

    E-Print Network [OSTI]

    Zhengfeng, Xiong; Jian, Yu; Huaibi, Chen; Hui, Ning

    2015-01-01

    SLAC energy doubler (SLED) type radio-frequency pulse compressors are widely used in large-scale particle accelerators for converting long-duration moderate-power input pulse into short-duration high-power output pulse. The phase shift keying (PSK) is one of the key components in SLED pulse compression systems. Performance of the PSK will influence the output characteristics of SLED, such as rise-time of the output pulse, the maximal peak power gain, and the energy efficiency. In this paper, high power microwave source based on power combining and pulse compression of conventional klystrons was introduced, the nonideal PSK with slow switching speed and without power output during the switching process were investigated, the experimental results with nonideal PSK agreed well with the analytical results.

  10. High speed transfer switch with 50 kA and 50 kV

    SciTech Connect (OSTI)

    Reass, W.A.; Kasik, R.J.; Wilds, W.A.

    1989-01-01

    This paper gives the mechanical design and electrical parameters of a pneumatically operated transfer switch. This design is used to switch 3-second 50-kA current pulses, and is easily capable of 75 kA operation (2 {times} 10{sup 10} I{sup 2}t); with water-cooled versions capable of 20 kA continuously. Although the switch is not specifically designed to make or break 50 kA, it is provided with auxiliary Elkonite arcing contacts have proven their value in protecting the main electrodes even under repetitive (50 kA) fault conditions. Included in this presentation will be the results of extensive life testing and associated criteria. 6 figs., 1 tab.

  11. 200 ns pulse high-voltage supply for terahertz field emission Gregor H. Welsh, David A. Turton, David R. Jones, Dino A. Jaroszynski,a

    E-Print Network [OSTI]

    Strathclyde, University of

    ; published online 16 April 2007 We present a method of generating 200 ns high-voltage up to 40 kV pulses generator with high average power that can be synchronized at repetition rates of up to 100 kHz suitable. The output transformers T2/T3 are driven in parallel by the high current 1000 V metal-oxide semiconductor

  12. High-Frequency Resonant SEPIC Converter With Wide Input and Output Voltage Ranges

    E-Print Network [OSTI]

    Hu, Jingying

    This paper presents a resonant single-ended-primary-inductor-converter (SEPIC) converter and control method suitable for high frequency (HF) and very high frequency (VHF) dc-dc power conversion. The proposed design provides ...

  13. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    SciTech Connect (OSTI)

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2?cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470?nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  14. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, D.M.; Shires, C.D.

    1982-09-30

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  15. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

    SciTech Connect (OSTI)

    Özerli, Halil; Karteri, ?brahim; Karata?, ?ükrü; Altindal, ?emsettin

    2014-05-01

    Highlights: • The electronic parameters of the diode under temperature were investigated. • The barrier heights have a Gaussian distribution. • Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280–415 K. The barrier height for the Au/n-type GaAs SBDs from the I–V and C–V characteristics have varied from 0.901 eV to 0.963 eV (I–V) and 1.234 eV to 0.967 eV (C–V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280–415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I{sub 0}/T{sup 2}) versus (kT){sup ?1} and ln(I{sub 0}/T{sup 2}) versus (nkT){sup ?1} plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A ?{sub b0} versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of ?{sup ¯}{sub b0} = 1.071 eV and ?{sub 0} = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot.

  16. A Design-Oriented Framework to Determine the Parasitic Parameters of High Frequency Magnetics in Switching Power Supplies using Finite Element Analysis Techniques 

    E-Print Network [OSTI]

    Shadmand, Mohammad

    2012-07-16

    more important recently to predict their performance and frequency behavior. Accurate prediction and design of winding parasitic parameters of leakage inductance and winding capacitance for high frequency inductors and transformers in switching power...

  17. Peak Power Bi-directional Transfer From High Speed Flywheel to Electrical Regulated Bus Voltage System

    E-Print Network [OSTI]

    Szabados, Barna

    were performed to determine the energy transfer capabilities of a flywheel coupled high speed permanent magnet synchronous machine through the proposed system's energy storage tank. Results are presented have helped generate much interest for the development of practical and highly efficient electric

  18. Charge-pump voltage converter

    DOE Patents [OSTI]

    Brainard, John P. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  19. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, John P. (Albuquerque, NM); Emin, David (Albuquerque, NM)

    1986-01-01

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  20. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, J.P.; Emin, D.

    1983-12-21

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  1. Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants

    DOE Patents [OSTI]

    Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

    2014-09-09

    A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

  2. All optical on-off switching using bismuth-based highly nonlinear fiber

    E-Print Network [OSTI]

    Wai, Ping-kong Alexander

    the idlers generated by the four wave mixing effect. When the control signal is low, i.e. the OFF state: enwai@polyu.edu.hk N. Sugimoto Asahi Glass Co., Ltd, 1150 Hazawa-cho, Yokohama 221-8755, Japan Abstract: We have demonstrated all-optical on-off switching at 10 Gbit/s using four-wave mixing in only 1.9 m

  3. High-voltage switchgear and controlgear part 200 : AC metal-enclosed switchgear and controlgear for rated voltages above 1 kV and up to and including 52 kV

    E-Print Network [OSTI]

    International Electrotechnical Commission. Geneva

    2011-01-01

    Specifies requirements for factory-assembled metal-enclosed switchgear and controlgear for alternating current of rated voltages above 1 kV and up to and including 52 kV for indoor and outdoor installation, and for service frequencies up to and including 60 Hz. Enclosures may include fixed and removable components and may be filled with fluid (liquid or gas) to provide insulation. This standard defines several types of metal enclosed switchgear and controlgear which differ due to - the consequences on network service continuity in case of maintenance on the switchgear and controlgear; - the need and convenience of maintenance of the equipment. For metal-enclosed switchgear and controlgear containing gas-filled compartments, the design pressure is limited to a maximum of 300 kPa (relative pressure). Metal-enclosed switchgear and controlgear for special use, for example, in flammable atmospheres, in mines or on board ships, may be subject to additional requirements. Components contained in metal-enclosed switch...

  4. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles (Technical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (JournalvivoHigh energy neutronHigh-Pressure MOFElectricity

  5. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

    1994-09-27

    A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

  6. Proceedings of the seventh international conference on high voltage electron microscopy

    SciTech Connect (OSTI)

    Fisher, R.M.; Gronsky, R.; Westmacott, K.H. (eds.)

    1983-01-01

    Eight-four papers are arranged under the following headings: high resolution, techniques and instrumentation, radiation effects, in-situ and phase transformations, minerals and ceramics, and semiconductors and thin films. Twenty-three papers were abstracted separately for the data base; three of the remainder had previously been abstracted. (DLC)

  7. Opportunities and Challenges in Very High Frequency Power Conversion

    E-Print Network [OSTI]

    Perreault, Dave

    in switching frequency directly reduce the energy- storage requirements of power converters, improving achiev transition times. In this paper, we will focus on designs compatible with zero-voltage switching and resonant methods. We present an overview of the design of power electronics at extreme high frequencies

  8. High Voltage Electrolytes for Li-ion Batteries | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡HighApproaches | 03.25.2015DOE2

  9. High Voltage Electrolytes for Li-ion Batteries | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡HighApproaches | 03.25.2015DOE21 DOE

  10. High Voltage Electrolytes for Li-ion Batteries | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing ProgramsDepartment of¡HighApproaches | 03.25.2015DOE21

  11. Design of Wavelength Converting Switches for Optical Burst Jeyashankher Ramamirtham and Jonathan Turner

    E-Print Network [OSTI]

    Design of Wavelength Converting Switches for Optical Burst Switching Jeyashankher Ramamirtham Switches for Optical Burst Switching£ Jeyashankher Ramamirtham, Jonathan TurnerÝ Abstract Optical Burst Switching (OBS) is an experimental network technology that enables the construction of very high capacity

  12. High-frequency matrix converter with square wave input

    DOE Patents [OSTI]

    Carr, Joseph Alexander; Balda, Juan Carlos

    2015-03-31

    A device for producing an alternating current output voltage from a high-frequency, square-wave input voltage comprising, high-frequency, square-wave input a matrix converter and a control system. The matrix converter comprises a plurality of electrical switches. The high-frequency input and the matrix converter are electrically connected to each other. The control system is connected to each switch of the matrix converter. The control system is electrically connected to the input of the matrix converter. The control system is configured to operate each electrical switch of the matrix converter converting a high-frequency, square-wave input voltage across the first input port of the matrix converter and the second input port of the matrix converter to an alternating current output voltage at the output of the matrix converter.

  13. Voltage breakdown limits at a high material temperature for rapid pulse heating in a vacuum

    SciTech Connect (OSTI)

    Pincosy, P A; Speer, R

    1999-06-07

    The proposed Advanced Hydro Facility (AHF) is required to produce multi-pulse radiographs. Electron beam pulse machines with sub-microsecond repetition are not yet available to test the problem of electron beam propagation through the hydro-dynamically expanding plasma from the nearby previously heated target material. A proposed test scenario includes an ohmically heated small volume of target material simulating the electron beam heating, along with an actual electron beam pulse impinging on nearby target material. A pulse power heating circuit was tested to evaluate the limits of pulse heating a small volume of material to tens of kilo-joules per gram. The main pulse heating time (50 to 100 ns) was to simulate the electron beam heating of a converter target material. To avoid skin heating non-uniformity a longer time scale pulse of a few microseconds first heats the target material to a few thousand degrees near the liquid to vapor transition. Under this state the maximum electric field that the current carrying conductor can support is the important parameter for insuring that the 100 ns heating pulse can deposit sufficient power. A small pulse power system was built for tests of this limit. Under cold conditions the vacuum electric field hold-off limit has been quoted as high as many tens of kilovolts per centimeter. The tests for these experiments found that the vacuum electric field hold-off was limited to a few kilovolts per centimeter when the material approached melting temperatures. Therefore the proposed test scenario for AHF was not achievable.*

  14. Infrared detection with high-{Tc} bolometers and response of Nb tunnel junctions to picosecond voltage pulses

    SciTech Connect (OSTI)

    Verghese, S.

    1993-05-01

    Oxide superconductors with high critical temperature {Tc} make sensitive thermometers for several types of infrared bolometers. The authors built composite bolometers with YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thermometers on sapphire substrates which have higher sensitivity than competing thermal detectors which operate at temperatures above 77 K. A 1 x 1 mm bolometer with gold black serving as the radiation absorber has useful sensitivity for wavelengths 20--100 {mu}m. A 3 x 3 mm bolometer with a bismuth film as the absorber operates from 20--100 {mu}m. High-{Tc} bolometers which are fabricated with micromachining techniques on membranes of Si or Si{sub 3}N{sub 4} have potential application to large-format arrays which are used for infrared imaging. A nonisothermal high-{Tc} bolometer can be fabricated on a membrane of yttria-stabilized zirconia (YSZ) which is in thermal contact with the heat sink along the perimeter of the membrane. A thermal analysis indicates that the YSZ membrane bolometer can have improved sensitivity compared to the sapphire bolometer for spectrometer applications. The quasiparticle tunneling current in a superconductor-insulator-superconductor (SIS) junction is highly nonlinear in the applied voltage. The authors have made the first measurement of the linear response of the quasiparticle current in a Nb/AlO{sub x}/Nb junction over a broad bandwidth from 75--200 GHz. Nonlinear measurements made with these pulses may provide information about the quasiparticle lifetime. Preliminary data from such measurements are presented.

  15. IP SwitchingIP Switching and Label Switchingand Label Switching

    E-Print Network [OSTI]

    Jain, Raj

    Raj Jain 1 IP SwitchingIP Switching and Label Switchingand Label Switching Raj Jain Professor Switching vs routing q IP Switching (Ipsilon) q Tag Switching (CISCO) q Multi-protocol label switching a tag. Exit router strips it off. H R R R H H HUntagged Packet Tagged packet #12;Raj Jain 9 Tag

  16. Low-voltage gyrotrons

    SciTech Connect (OSTI)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S. [Institute of Applied Physics RAS, N. Novgorod 603600 (Russian Federation); Nusinovich, G. S. [IREAP, University of Maryland, College Park, Maryland 20742-3511 (United States)

    2013-03-15

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  17. Proc. International Symposium on Circuits and Systems (ISCAS), vol. 5, pp 653 -656, Geneva (Switzerland), May 2000 Low Power/Low Voltage High Speed CMOS Differential

    E-Print Network [OSTI]

    Fayomi, Christian

    (Switzerland), May 2000 Low Power/Low Voltage High Speed CMOS Differential Track and Latch Comparator with Rail-to-Rail is presented. The circuit consists of a constant-gm rail-to-rail common-mode operational transconductance. A consequence of the lowered power supply is the need for rail-to- rail input stages in order to compensate

  18. Low Voltage High-SNR Pipeline Data Converters Charles Myers, Jipeng Li, Dong-Young Chang, and Un-Ku Moon

    E-Print Network [OSTI]

    Moon, Un-Ku

    Low Voltage High-SNR Pipeline Data Converters Charles Myers, Jipeng Li, Dong-Young Chang, and Un pipeline data converter. This is accomplished with the removal of the S/H input stage and the use of a rail limitations. In pipeline data converters, noise reduction options such as oversampling and noise shaping

  19. Total current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping D. Jin, J. Joh*, S. Krishnan*, N. Tipirneni*, S. Pendharkar* and J. A. del Alamo

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    observed after OFF-state stress at high voltage. We attribute this to high-field tunneling-induced electron/detrapping dynamics have been extracted. All of our experimental results are consistent with electron trapping insideTotal current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping D. Jin, J. Joh*, S

  20. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  1. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  2. Where Are the Switches on This Thing? L. F. Abbott

    E-Print Network [OSTI]

    Abbott, Laurence

    21 Where Are the Switches on This Thing? L. F. Abbott Introduction Controlled responses differ from and turn them off and on? Self-regulated switching is vital to the operation of complex machines such as computers. The essential building block of a computer is a voltage-gated switch, the transistor

  3. Erected mirror optical switch

    DOE Patents [OSTI]

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  4. Wind Power Plant Voltage Stability Evaluation: Preprint

    SciTech Connect (OSTI)

    Muljadi, E.; Zhang, Y. C.

    2014-09-01

    Voltage stability refers to the ability of a power system to maintain steady voltages at all buses in the system after being subjected to a disturbance from a given initial operating condition. Voltage stability depends on a power system's ability to maintain and/or restore equilibrium between load demand and supply. Instability that may result occurs in the form of a progressive fall or rise of voltages of some buses. Possible outcomes of voltage instability are the loss of load in an area or tripped transmission lines and other elements by their protective systems, which may lead to cascading outages. The loss of synchronism of some generators may result from these outages or from operating conditions that violate a synchronous generator's field current limit, or in the case of variable speed wind turbine generator, the current limits of power switches. This paper investigates the impact of wind power plants on power system voltage stability by using synchrophasor measurements.

  5. Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators

    SciTech Connect (OSTI)

    Cheng Xinbing; Liu Jinliang; Qian Baoliang; Zhang Yu; Zhang Hongbo [College of Photoelectrical Science and Engineering, National University of Defense Technology, Hunan 410073 (China)

    2009-11-15

    A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

  6. Voltage control in pulsed system by predict-ahead control

    DOE Patents [OSTI]

    Payne, A.N.; Watson, J.A.; Sampayan, S.E.

    1994-09-13

    A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load. 4 figs.

  7. Design of high order switched resistor momolithic filters using NMOS technology 

    E-Print Network [OSTI]

    Aguilar, Raul Antonio

    1983-01-01

    are shown in Figure 15. Observe that an 29 ammeter ds FET VGS a) 500 V05 -IV V05 Ov 200 Vas IV IE0 IEI IF2 IE8 IE4 IE5 IE6 IE7 IE8 Frequqncy (Hz) b) Figure 15. AC resistance of an NMOS transistor as a function of frequency (W/L= . 3/5, V = -3... 27 SPICE simulation of the DC resistance at two different values of VDS BB -10V, Vt = -3. 5V) a) W/L=. 3/6, to b) W/L=. 3/12 61 28 SPICE simulation of the DC resistance at different threshold voltages (VDS= lE-4V, VBB= -lDV). a) W/L= . 3/6, b) W...

  8. Appears in the Proceedings of the 47th Int'l Symp. on Microarchitecture (MICRO-47), December 2014 Enabling Realistic Fine-Grain Voltage Scaling with

    E-Print Network [OSTI]

    Batten, Christopher

    of high-speed switching with suitable parasitic losses; and (2) limited availability of integrated energy-storage- tion complexity, power density, power efficiency, and response time. In this paper, we use architecture-level modeling to explore a new dynamic voltage/frequency scaling controller called the fine

  9. Please cite this article in press as: M. Karpelson, et al., Driving high voltage piezoelectric actuators in microrobotic applications, Sens. Actuators A: Phys. (2012), doi:10.1016/j.sna.2011.11.035

    E-Print Network [OSTI]

    Wood, Robert

    2012-01-01

    .elsevier.com/locate/sna Driving high voltage piezoelectric actuators in microrobotic applications Michael Karpelson , Gu-Yeon WeiPlease cite this article in press as: M. Karpelson, et al., Driving high voltage piezoelectric actuators in microrobotic applications, Sens. Actuators A: Phys. (2012), doi:10.1016/j.sna.2011

  10. Apparatus for producing voltage and current pulses

    DOE Patents [OSTI]

    Kirbie, Hugh (Los Alamos, NM); Dale, Gregory E. (Los Alamos, NM)

    2010-12-21

    An apparatus having one or more modular stages for producing voltage and current pulses. Each module includes a diode charging means to charge a capacitive means that stores energy. One or more charging impedance means are connected to the diode charging means to provide a return current pathway. A solid-state switch discharge means, with current interruption capability, is connected to the capacitive means to discharge stored energy. Finally, a control means is provided to command the switching action of the solid-state switch discharge means.

  11. Electronic logic for enhanced switch reliability

    DOE Patents [OSTI]

    Cooper, J.A.

    1984-01-20

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  12. Statistical analysis of the dynamics of secondary electrons in the flare of a high-voltage beam-type discharge

    SciTech Connect (OSTI)

    Demkin, V. P.; Mel'nichuk, S. V.

    2014-09-15

    In the present work, results of investigations into the dynamics of secondary electrons with helium atoms in the presence of the reverse electric field arising in the flare of a high-voltage pulsed beam-type discharge and leading to degradation of the primary electron beam are presented. The electric field in the discharge of this type at moderate pressures can reach several hundred V/cm and leads to considerable changes in the kinetics of secondary electrons created in the process of propagation of the electron beam generated in the accelerating gap with a grid anode. Moving in the accelerating electric field toward the anode, secondary electrons create the so-called compensating current to the anode. The character of electron motion and the compensating current itself are determined by the ratio of the field strength to the concentration of atoms (E/n). The energy and angular spectra of secondary electrons are calculated by the Monte Carlo method for different ratios E/n of the electric field strength to the helium atom concentration. The motion of secondary electrons with threshold energy is studied for inelastic collisions of helium atoms and differential analysis is carried out of the collisional processes causing energy losses of electrons in helium for different E/n values. The mechanism of creation and accumulation of slow electrons as a result of inelastic collisions of secondary electrons with helium atoms and selective population of metastable states of helium atoms is considered. It is demonstrated that in a wide range of E/n values the motion of secondary electrons in the beam-type discharge flare has the character of drift. At E/n values characteristic for the discharge of the given type, the drift velocity of these electrons is calculated and compared with the available experimental data.

  13. High Power Metal-Contact and Capacitive Switches with Stress Resilient Designs /

    E-Print Network [OSTI]

    Zareie, Hosein

    2013-01-01

    design was optimized to achieve high power handling under hot switchingswitching conditions. Chapter 4 presents the design, simulation, fabrication and measurement of the high power

  14. Low Beam Voltage, 10 MW, L-Band Cluster Klystron

    SciTech Connect (OSTI)

    Teryaev, V.; /Novosibirsk, IYF; Yakovlev, V.P.; /Fermilab; Kazakov, S.; /KEK, Tsukuba; Hirshfield, J.L.; /Yale U. /Omega-P, New Haven

    2009-05-01

    Conceptual design of a multi-beam klystron (MBK) for possible ILC and Project X applications is presented. The chief distinction between this MBK design and existing 10-MW MBK's is the low operating voltage of 60 kV. There are at least four compelling reasons that justify development at this time of a low-voltage MBK, namely (1) no pulse transformer; (2) no oil tank for high-voltage components and for the tube socket; (3) no high-voltage cables; and (4) modulator would be a compact 60-kV IGBT switching circuit. The proposed klystron consists of four clusters containing six beams each. The tube has common input and output cavities for all 24 beams, and individual gain cavities for each cluster. A closely related optional configuration, also for a 10 MW tube, would involve four totally independent cavity clusters with four independent input cavities and four 2.5 MW output ports, all within a common magnetic circuit. This option has appeal because the output waveguides would not require a controlled atmosphere, and because it would be easier to achieve phase and amplitude stability as required in individual SC accelerator cavities.

  15. Numerical simulations of output pulse extraction from a high-power microwave compressor with a plasma switch

    SciTech Connect (OSTI)

    Shlapakovski, Anatoli; Beilin, Leonid; Bliokh, Yuri; Donskoy, Moshe; Krasik, Yakov E. [Physics Department, Technion, Haifa 32000 (Israel); Hadas, Yoav [Department of Applied Physics, Rafael, PO Box 2250, Haifa 31021 (Israel); Schamiloglu, Edl [Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2014-05-07

    Numerical simulations of the process of electromagnetic energy release from a high-power microwave pulse compressor comprising a gas-filled cavity and interference switch were carried out. A microwave plasma discharge in a rectangular waveguide H-plane tee was modeled with the use of the fully electromagnetic particle-in-cell code MAGIC. The gas ionization, plasma evolution, and interaction with RF fields accumulated within the compressor were simulated using different approaches provided by the MAGIC code: particle-in-cell approach accounting for electron-neutral collisions, gas conductivity model based on the concept of mobility, and hybrid modeling. The dependences of the microwave output pulse peak power and waveform on parameters that can be controlled in experiments, such as an external ionization rate, RF field amplitude, and background gas pressure, were investigated.

  16. Optical switches and switching methods

    DOE Patents [OSTI]

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  17. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, Kim W. (Albuquerque, NM); Kiekel, Paul (Albuquerque, NM)

    1999-01-01

    Apparatus for synchronizing the output pulses from a pair of magnetic switches. An electrically conductive loop is provided between the pair of switches with the loop having windlings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself.

  18. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, K.W.; Kiekel, P.

    1999-04-27

    Apparatus for synchronizing the output pulses from a pair of magnetic switches is disclosed. An electrically conductive loop is provided between the pair of switches with the loop having windings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself. 13 figs.

  19. Packaged X-band Phased-Arrays and High Data-Rate Switching Matrices in Advanced CMOS Processes

    E-Print Network [OSTI]

    Shin, Donghyup

    Coupling . . . . . Packaging . . . . . . . . . . . . . .2.4 Chip-On-Board Packaging: Simulations and Measurements1.2 Integrated Circuit Packaging 1.3 Switching

  20. Proposal for the award of a contract, without competitive tendering, for the maintenance of high-voltage switchgear and protection equipment

    E-Print Network [OSTI]

    2003-01-01

    This document concerns the award of a contract, without competitive tendering, for the maintenance of high-voltage switchgear and protection equipment. The Finance Committee is invited to agree to the negotiation of a contract, without competitive tendering, for the maintenance of high-voltage switchgear and protection equipment with SCHNEIDER (FR) for a total amount of 1 100 000 euros (1 742 000 Swiss francs), covering an initial period of five years, subject to revision for inflation after 1 January 2007. The contract will include options for two one-year extensions beyond the initial five-year period. The amount in Swiss francs has been calculated using the present rate of exchange. The firm has indicated the following distribution by country of the contract value covered by this adjudication proposal: FR - 100%.

  1. Voltage balanced multilevel voltage source converter system

    DOE Patents [OSTI]

    Peng, F.Z.; Lai, J.S.

    1997-07-01

    Disclosed is a voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means. 15 figs.

  2. A PC-PCL-based control system for the high-voltage pulsed-power operation of the Intense Diagnostic Neutral Beam (IDNB) Experiment

    SciTech Connect (OSTI)

    Gribble, R.

    1993-06-01

    A stand-alone, semiautomated control system for the high-voltage pulsed-power energy sources on the Intense Diagnostic Neutral Beam Experiment at Los Alamos National Laboratory using personal computer (PC) and programmable logic controller (PLC) technology has been developed and implemented. The control system, consisting of a PC with the graphic operator interface, the network connecting the PC to the PLC, the PLC, the PLC I/O modules, fiber-optic interfaces and software, is described.

  3. A Multiphase, Modular, Bidirectional, Triple-Voltage DC-DC Converter Power Systems

    SciTech Connect (OSTI)

    Su, Gui-Jia [ORNL; Tang, Lixin [ORNL

    2008-01-01

    Electrical power systems in future hybrid and fuel cell vehicles may employ three voltage [14 V, 42 V, and high voltage (HV)] nets. These will be necessary to accommodate existing 14-V loads as well as efficiently handle new heavy loads at the 42-V net and a traction drive on the HV bus. A low-cost DC-DC converter was proposed for connecting the three voltage nets. It minimizes the number of switches and their associated gate driver components by using two half-bridges and a high-frequency transformer. Another salient feature is that the half bridge on the 42-V bus is also utilized to provide the 14-V bus by operating at duty ratios around an atypical value of 1/3. Moreover, it makes use of the parasitic capacitance of the switches and the transformer leakage inductance for soft switching. The use of half bridges makes the topology well suited for interleaved multiphase modular configurations as a means to increase the power level because the capacitor legs can be shared. This paper presents simulation and experimental results on an interleaved two-phase arrangement rated at 4.5 kW. Also discussed are the benefits of operating with an atypical duty ratio on the transformer and a preferred multiphase configuration to minimize capacitor ripple currents.

  4. Abstract --Research on silicon carbide (SiC) power electronics has shown their advantages in high temperature

    E-Print Network [OSTI]

    Tolbert, Leon M.

    in switching applications such as AC motor control, motion/servo control, uninterruptible power suppliesAbstract -- Research on silicon carbide (SiC) power electronics has shown their advantages in high is verified to have low power loss, fast switching characteristics at 650 V dc bus voltage, 60 A drain current

  5. Contact voltage-induced softening of RF microelectromechanical system gold-on-gold contacts at cryogenic temperatures

    SciTech Connect (OSTI)

    Berman, D.; Krim, J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 26795 (United States); Walker, M. J. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 26795 (United States)

    2010-08-15

    A series of experiments were performed in vacuum environments to investigate the impact of rf micromechanical system switch contact voltage versus resistance for gold-on-gold contacts at cryogenic temperatures. The purpose of this work was twofold as follows: (1) to examine whether asperity heating models already validated for high temperature contacts were also applicable at cryogenic temperatures and (2) to explore the implications and validity of prior suggestions that contact temperatures between 338 and 373 K are high enough to dissociate adsorbed film and/or push them aside but low enough to prevent asperities from becoming soft and adherent. Measurements on two distinct switch types, fabricated at independent laboratories, were performed in the temperature range 79-293 K and for contact voltages ranging from 0.01 to 0.13 V. Contact resistance values at all temperatures were observed to be lower for higher contact voltages, consistent with the aforementioned asperity heating models, whereby increased contact currents are associated with increased heating and softening effects. In situ removal of adsorbed species by oxygen plasma cleaning resulted in switch adhesive failure. Switches that had not been cleaned meanwhile exhibited distinct reductions in resistance at contact temperatures close to 338 K, consistent with suggestions that films begin to desorb, disassociate, and/or be pushed aside at that temperature.

  6. Effects of High-Altitude Electromagnetic Pulse (HEMP) on the Northern Telecom Inc. DMS-100 (trademark) switch. Volume 3. Data analysis. Final report

    SciTech Connect (OSTI)

    Not Available

    1988-09-01

    This report is part of a three volume set that presents the results of simulated High-Altitude Electromagnetic Pulse (HEMP) testing of a DMS-100 Switching System. This volume describes the post test analysis of the measured electromagnetic fields and induced transients. This volume also includes a comparison of the characteristic attributes of the various simulator environments.

  7. Effects of High-Altitude Electromagnetic Pulse (HEMP) on the Northern Telecom Inc. DMS-100 (trademark) switch. Volume 2. Test program. Final report

    SciTech Connect (OSTI)

    Not Available

    1988-09-01

    This report is part of a three volume set that presents the results of simulated High-Altitude Electromagnetic Pulse (HEMP) testing of a DMS-100 Switching System. This volume is a detailed description of the test procedures, test results, and the mitigation alternatives evaluated. This volume also presents a discussion of the conclusion and recommendations of the program.

  8. Hybrid high direct current circuit interrupter

    DOE Patents [OSTI]

    Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

    1998-08-11

    A device and a method are disclosed for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens. 7 figs.

  9. Hybrid high direct current circuit interrupter

    DOE Patents [OSTI]

    Rockot, Joseph H. (N. Huntingdon, PA); Mikesell, Harvey E. (McMurray, PA); Jha, Kamal N. (Bethel Park, PA)

    1998-01-01

    A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

  10. Momentum switches

    E-Print Network [OSTI]

    Andrew M. Childs; David Gosset; Daniel Nagaj; Mouktik Raha; Zak Webb

    2014-06-17

    Certain continuous-time quantum walks can be viewed as scattering processes. These processes can perform quantum computations, but it is challenging to design graphs with desired scattering behavior. In this paper, we study and construct momentum switches, graphs that route particles depending on their momenta. We also give an example where there is no exact momentum switch, although we construct an arbitrarily good approximation.

  11. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    DOE Patents [OSTI]

    Cooper, James A. (Albuquerque, NM)

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  12. Robust metal contact and capacitive mini-MEMS switches

    E-Print Network [OSTI]

    Sedaghat Pisheh, Hojr

    2013-01-01

    Mini-MEMS MechanicalSpring Constant, High Contact Force RF MEMS Switch 3.1First Generation of Miniature MEMS Capacitive Switch . . 4.3

  13. Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

    SciTech Connect (OSTI)

    Jong Choi, Hyung; Won Park, Suk; Deok Han, Gwon; Hyung Shim, Joon; Na, Junhong; Kim, Gyu-Tae

    2014-06-16

    Strontium titanate (STO) thin films 90?nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800?°C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}–10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

  14. Microfabricated triggered vacuum switch

    DOE Patents [OSTI]

    Roesler, Alexander W. (Tijeras, NM); Schare, Joshua M. (Albuquerque, NM); Bunch, Kyle (Albuquerque, NM)

    2010-05-11

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  15. Proposal for the award of a blanket order contract for the supply and installation of high-voltage metal-clad compartmented switchgear

    E-Print Network [OSTI]

    2001-01-01

    This document concerns the award of a blanket order contract for the supply and installation of high-voltage metal-clad compartmented switchgear. Following a market survey (MS-2761/ST) carried out among 59 firms in fifteen Member States, a call for tenders (IT-2827/ST) was sent on 23 January 2001 to 14 firms in ten Member States. By the closing date, CERN had received eight tenders from eight firms in seven Member States. The Finance Committee is invited to agree to the negotiation of a blanket order contract with SCHNEIDER ELECTRIC (IT), the lowest bidder, for the supply and installation of high-voltage metal-clad compartmented switchgear for a total amount of 4 300 000 euros (6 611 000 Swiss francs), not subject to revision until 31 July 2003. The rate of exchange which has been used is that stipulated in the tender. The firm has indicated the following distribution by country of the contract value covered by this adjudication proposal: IT - 70%; FR - 30%.

  16. A 93% efficiency reconfigurable switched-capacitor DC-DC converter using on-chip ferroelectric capacitors

    E-Print Network [OSTI]

    El-Damak, Dina Reda

    Dynamic Voltage Scaling (DVS) has become one of the standard techniques for energy efficient operation of systems by powering circuit blocks at the minimum voltage that meets the desired performance [1]. Switched Capacitor ...

  17. Efficient tunable switch from slow light to fast light in quantum opto-electromechanical system

    E-Print Network [OSTI]

    Akram, M Javed; Saif, Farhan

    2015-01-01

    The control of slow and fast light propagation, in the probe transmission in a single experiment, is a challenging task. This type of control can only be achieved through highly nonlinear interactions and additional interfering pathway(s), which is therefore seldom reported. Here, we devise a scheme in which slow light, and a tunable switch from slow light to fast light can be achieved in the probe transmission based on a hybrid setup, which is composed of an optical cavity with two charged nano mechanical resonators (MRs). The two MRs are electrostatically coupled via tunable Coulomb coupling strength ($g_{c}$) making a quantum opto-electromechanical system (QOEMS). The parameter $g_{c}$ that couples the two MRs can be switched on and off by controlling the bias voltages on the MRs, and acts as a tunable switch that allows the propagation of transmitted probe field as slow light ($g_{c} \

  18. Efficient tunable switch from slow light to fast light in quantum opto-electromechanical system

    E-Print Network [OSTI]

    M. Javed Akram; Khalid Naseer; Farhan Saif

    2015-03-05

    The control of slow and fast light propagation, in the probe transmission in a single experiment, is a challenging task. This type of control can only be achieved through highly nonlinear interactions and additional interfering pathway(s), which is therefore seldom reported. Here, we devise a scheme in which slow light, and a tunable switch from slow light to fast light can be achieved in the probe transmission based on a hybrid setup, which is composed of an optical cavity with two charged nano mechanical resonators (MRs). The two MRs are electrostatically coupled via tunable Coulomb coupling strength ($g_{c}$) making a quantum opto-electromechanical system (QOEMS). The parameter $g_{c}$ that couples the two MRs can be switched on and off by controlling the bias voltages on the MRs, and acts as a tunable switch that allows the propagation of transmitted probe field as slow light ($g_{c} \

  19. Asynchronous vs Synchronous Input-Queued Switches

    E-Print Network [OSTI]

    1 Asynchronous vs Synchronous Input-Queued Switches Andrea Bianco, Davide Cuda, Paolo Giaccone Dipartimento di Elettronica, Politecnico di Torino (Italy) 3 Abstract--Input-queued (IQ) switches are one of the reference archi- tectures for the design of high-speed packet switches. Classical results in this field

  20. Asynchronous vs Synchronous Input-Queued Switches

    E-Print Network [OSTI]

    Asynchronous vs Synchronous Input-Queued Switches Andrea Bianco, Davide Cuda, Paolo Giaccone, Fabio Neri Dipartimento di Elettronica, Politecnico di Torino (Italy) Abstract--Input-queued (IQ) switches are one of the reference architectures for the design of high-speed packet switches. Clas- sical results

  1. Specific expression of the human voltage-gated proton channel Hv1 in highly metastatic breast cancer cells, promotes tumor progression and metastasis

    SciTech Connect (OSTI)

    Wang, Yifan [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China)] [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China); Li, Shu Jie, E-mail: shujieli@nankai.edu.cn [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China); Pan, Juncheng [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China)] [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China); Che, Yongzhe, E-mail: cheli@nankai.edu.cn [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Medicine, Nankai University, Tianjin 300071 (China)] [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Medicine, Nankai University, Tianjin 300071 (China); Yin, Jian [Cancer Institute and Hospital, Tianjin Medical University, Tianjin 300060 (China)] [Cancer Institute and Hospital, Tianjin Medical University, Tianjin 300060 (China); Zhao, Qing [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China)] [The Key Laboratory of Bioactive Materials, Ministry of Education, School of Physics Science, Nankai University, Tianjin 300071 (China)

    2011-08-26

    Highlights: {yields} Hv1 is specifically expressed in highly metastatic human breast tumor tissues. {yields} Hv1 regulates breast cancer cytosolic pH. {yields} Hv1 acidifies extracellular milieu. {yields} Hv1 exacerbates the migratory ability of metastatic cells. -- Abstract: The newly discovered human voltage-gated proton channel Hv1 is essential for proton transfer, which contains a voltage sensor domain (VSD) without a pore domain. We report here for the first time that Hv1 is specifically expressed in the highly metastatic human breast tumor tissues, but not in poorly metastatic breast cancer tissues, detected by immunohistochemistry. Meanwhile, real-time RT-PCR and immunocytochemistry showed that the expression levels of Hv1 have significant differences among breast cancer cell lines, MCF-7, MDA-MB-231, MDA-MB-468, MDA-MB-453, T-47D and SK-BR-3, in which Hv1 is expressed at a high level in highly metastatic human breast cancer cell line MDA-MB-231, but at a very low level in poorly metastatic human breast cancer cell line MCF-7. Inhibition of Hv1 expression in the highly metastatic MDA-MB-231 cells by small interfering RNA (siRNA) significantly decreases the invasion and migration of the cells. The intracellular pH of MDA-MB-231 cells down-regulated Hv1 expression by siRNA is obviously decreased compared with MDA-MB-231 with the scrambled siRNA. The expression of matrix metalloproteinase-2 and gelatinase activity in MDA-MB-231 cells suppressed Hv1 by siRNA were reduced. Our results strongly suggest that Hv1 regulates breast cancer intracellular pH and exacerbates the migratory ability of metastatic cells.

  2. Novel Hybrid Materials with High Stability for Electrically Switched Ion Exchange: Carbon Nanotubes/Polyaniline/Nickel Hexacyanoferrate Nanocomposites

    SciTech Connect (OSTI)

    Lin, Yuehe; Cui, Xiaoli

    2005-04-21

    A novel and stable carbon nanotubes /polyaniline /nickel hexacyanoferrates composite film has been synthesized with electrodeposition method, and the possibility for removing cesium through an electrically switched ion exchange has been evaluated in a mixture containing NaNO3 and CsNO3.

  3. Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker

    E-Print Network [OSTI]

    Fernandez-Martinez, Pablo; Flores, David; Hidalgo, Salvador; Quirion, David; Lynn, David

    2015-01-01

    This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. Special attention has been paid to the on-resistance and the switch-off and breakdown voltages to meet the specific requirements of the system. In addition, a set of parameter values has been extracted from the simulated curves to implement a SPICE model of the proposed V-JFET transistor. As these devices are expected to operate under very high radiation conditions during the whole experiment life-time, a study of the radiation damage effects and the expected degradation on the device performance is also presented at the end of the paper.

  4. Determination of threshold and maximum operating electric stresses for selected high voltage insulations: Investigation of aged polymeric dielectric cable. Final report

    SciTech Connect (OSTI)

    Eager, G.S. Jr.; Seman, G.W.; Fryszczyn, B.

    1995-11-01

    Based on the successful completion of the extensive research project DOE/ET/29303-1 February 1982 to develop a new method for the determination of threshold voltage in XLPE and EPR insulated cables, tests were initiated to establish the maximum safe operating voltage stresses of crosslinked polyethylene insulated cables that become wet when they operate in a moist environment. The present report covers the measurement of the threshold voltage, the a.c. breakdown voltage and the impulse breakdown voltage of XLPE cable after undergoing accelerated laboratory aging in water. Model and 15 kV XLPE cables were manufactured in commercial equipment using state-of-the-art semiconducting shields and XLPE insulation. The threshold voltage, a.c. voltage breakdown and impulse voltage breakdown of the model cables were determined before aging, after aging one week and after aging 26 weeks. The model cable, following 26 weeks aging, was dried by passing dry gas through the conductor interstices which removed moisture from the cable. The threshold voltage, the a.c. voltage breakdown and the impulse voltage breakdown of the XLPE model cable after drying was measured.

  5. Fundamental science investigations to develop a 6-MV laser triggered gas switch for ZR: first annual report.

    SciTech Connect (OSTI)

    Warne, Larry Kevin; Van Den Avyle, James A.; Lehr, Jane Marie; Rose, David; Krompholz, Hermann G.; Vela, Russell; Jorgenson, Roy Eberhardt; Timoshkin, Igor (University of Strathclyde, Glasgow, Scotland); Woodworth, Joseph Ray; Prestwich, Kenneth Randel (Voss Scientific, Albuquerque, NM); Krile, John; Given, Martin (University of Strathclyde, Glasgow, Scotland); McKee, G. Randall; Rosenthal, Stephen Edgar; Struve, Kenneth William; Welch, Dale Robert (Voss Scientific, Albuquerque, NM); Benwell, Andrew L. (University of Missouri-Columbia, Columbia, Missouri); Kovaleski, Scott; LeChien, Keith, R.; Johnson, David (Titan Pulse Sciences Division); Fouracre, R.A. (University of Strathclyde, Glasgow, Scotland); Yeckel, Chris (University of Missouri-Columbia, Columbia, Missouri); Wakeland, Peter Eric; Miller, A. R. (Titan Pulse Sciences Division); Hodge, Keith Conquest (Ktech Corporation, Albuquerque, NM); Pasik, Michael Francis; Savage, Mark Edward; Maenchen, John Eric; Curry, Randy D.; Feltz, Greg; Bliss, David Emery; MacGregor, Scott (University of Strathclyde, Glasgow, Scotland); Corley, J. P. (Ktech Corporation, Albuquerque, NM); Anaya, Victor (Ktech Corporation, Albuquerque, NM); Wallace, Zachariah (Ktech Corporation, Albuquerque, NM); Thoma, Carsten (Voss Scientific, Albuquerque, NM); Neuber, Andreas. (Texas Tech University, Lubbock, TX)

    2007-03-01

    In October 2005, an intensive three-year Laser Triggered Gas Switch (LTGS) development program was initiated to investigate and solve observed performance and reliability issues with the LTGS for ZR. The approach taken has been one of mission-focused research: to revisit and reassess the design, to establish a fundamental understanding of LTGS operation and failure modes, and to test evolving operational hypotheses. This effort is aimed toward deploying an initial switch for ZR in 2007, on supporting rolling upgrades to ZR as the technology can be developed, and to prepare with scientific understanding for the even higher voltage switches anticipated needed for future high-yield accelerators. The ZR LTGS was identified as a potential area of concern quite early, but since initial assessments performed on a simplified Switch Test Bed (STB) at 5 MV showed 300-shot lifetimes on multiple switch builds, this component was judged acceptable. When the Z{sub 20} engineering module was brought online in October 2003 frequent flashovers of the plastic switch envelope were observed at the increased stresses required to compensate for the programmatically increased ZR load inductance. As of October 2006, there have been 1423 Z{sub 20} shots assessing a variety of LTGS designs. Numerous incremental and fundamental switch design modifications have been investigated. As we continue to investigate the LTGS, the basic science of plastic surface tracking, laser triggering, cascade breakdown, and optics degradation remain high-priority mission-focused research topics. Significant progress has been made and, while the switch does not yet achieve design requirements, we are on the path to develop successively better switches for rolling upgrade improvements to ZR. This report summarizes the work performed in FY 2006 by the large team. A high-level summary is followed by detailed individual topical reports.

  6. Strategies for Voltage Control and Transient Stability Assessment

    SciTech Connect (OSTI)

    Hiskens, Ian A.

    2013-09-25

    As wind generation grows, its influence on power system performance will becoming increasingly noticeable. Wind generation di#11;ffers from traditional forms of generation in numerous ways though, motivating the need to reconsider the usual approaches to power system assessment and performance enhancement. The project has investigated the impact of wind generation on transient stability and voltage control, identifying and addressing issues at three distinct levels of the power system: 1) at the device level, the physical characteristics of wind turbine generators (WTGs) are quite unlike those of synchronous machines, 2) at the wind-farm level, the provision of reactive support is achieved through coordination of numerous dissimilar devices, rather than straightforward generator control, and 3) from a systems perspective, the location of wind-farms on the sub-transmission network, coupled with the variability inherent in their power output, can cause complex voltage control issues. The project has sought to develop a thorough understanding of the dynamic behaviour of type-3 WTGs, and in particular the WECC generic model. The behaviour of such models is governed by interactions between the continuous dynamics of state variables and discrete events associated with limits. It was shown that these interactions can be quite complex, and may lead to switching deadlock that prevents continuation of the trajectory. Switching hysteresis was proposed for eliminating deadlock situations. Various type-3 WTG models include control blocks that duplicate integrators. It was shown that this leads to non-uniqueness in the conditions governing steady-state, and may result in pre- and post-disturbance equilibria not coinciding. It also gives rise to a zero eigenvalue in the linearized WTG model. In order to eliminate the anomalous behaviour revealed through this investigation, WECC has now released a new generic model for type-3 WTGs. Wind-farms typically incorporate a variety of voltage control equipment including tapchanging transformers, switched capacitors, SVCs, STATCOMs and the WTGs themselves. The project has considered the coordinated control of this equipment, and has addressed a range of issues that arise in wind-farm operation. The #12;first concerns the ability of WTGs to meet reactive power requirements when voltage saturation in the collector network restricts the reactive power availability of individual generators. Secondly, dynamic interactions between voltage regulating devices have been investigated. It was found that under certain realistic conditions, tap-changing transformers may exhibit instability. In order to meet cost, maintenance, fault tolerance and other requirements, it is desirable for voltage control equipment to be treated as an integrated system rather than as independent devices. The resulting high-level scheduling of wind-farm reactive support has been investigated. In addressing this control problem, several forms of future information were considered, including exact future knowledge and stochastic predictions. Deterministic and Stochastic Dynamic Programming techniques were used in the development of control algorithms. The results demonstrated that while exact future knowledge is very useful, simple prediction methods yield little bene#12;fit. The integration of inherently variable wind generation into weak grids, particularly subtransmission networks that are characterized by low X=R ratios, aff#11;ects bus voltages, regulating devices and line flows. The meshed structure of these networks adds to the complexity, especially when wind generation is distributed across multiple nodes. A range of techniques have been considered for analyzing the impact of wind variability on weak grids. Sensitivity analysis, based on the power-flow Jacobian, was used to highlight sections of a system that are most severely a#11;ffected by wind-power variations. A continuation power flow was used to determine parameter changes that reduce the impact of wind-power variability. It was also used to explore interactions betw

  7. Charging a Battery-Powered Device with a Fiber-Optically Connected Photonic Power System for Achieving High-Voltage Isolation

    SciTech Connect (OSTI)

    Lizon, David C [Los Alamos National Laboratory; Gioria, Jack G [Los Alamos National Laboratory; Dale, Gregory E [Los Alamos National Laboratory; Snyder, Hans R [Los Alamos National Laboratory

    2008-01-01

    This paper describes the development and testing of a system to provide isolated power to the cathode-subsystem electronics of an x-ray tube. These components are located at the cathode potential of several hundred kilovolts, requiring a supply of power isolated from this high voltage. In this design a fiber-optically connected photonic power system (PPS) is used to recharge a lithium-ion battery pack, which will subsequently supply power to the cathode-subsystem electronics. The suitability of the commercially available JDSU PPS for this application is evaluated. The output of the ppe converter is characterized. The technical aspects of its use for charging a variety of Li-Ion batteries are discussed. Battery charge protection requirements and safety concerns are also addressed.

  8. Section IV.D.3 for DOE 2013 Annual Report: Novel Phosphazene-based Compounds to Enhance Safety and Stability of Cell Chemistries for High Voltage Applications (INL)

    SciTech Connect (OSTI)

    Kevin L. Gering; Mason K. Harrup; Eric J. Dufek; Sergiy V. Sazhin; Harry W. Rollins; David K. Jamison; Fred F. Stewart; John Burba

    2013-09-01

    Electrolytes play a central role in performance and aging in most electrochemical systems. As automotive and grid applications place a higher reliance on electrochemical stored energy, it becomes more urgent to have electrolyte components that enable optimal battery performance while promoting battery safety and longevity. Safety remains a foremost concern for widespread utilization of Li-ion technology in electric-drive vehicles, especially as the focus turns to higher voltage systems (5V). This work capitalizes on the long established INL expertise regarding phosphazene chemistry, aimed at battery-viable compounds for electrolytes and electrodes that are highly tolerant to abusive conditions. This report showcases our 2013 work for the DOE applied battery research (ABR) program, wherein testing results are summarized for INL electrolytes and alternative anode materials.

  9. Miniaturized, low-voltage power converters with fast dynamic response

    E-Print Network [OSTI]

    Giuliano, David (David Michael)

    2013-01-01

    This thesis introduces a two-stage architecture that combines the strengths of switched capacitor (SC) techniques (small size, light-load performance) with the high efficiency and regulation capability of switch-mode power ...

  10. Measurement of the internal stress and electric field in a resonating piezoelectric transformer for high-voltage applications using the electro-optic and photoelastic effects

    SciTech Connect (OSTI)

    VanGordon, James A.; Kovaleski, Scott D., E-mail: kovaleskis@missouri.edu; Norgard, Peter; Gall, Brady B. [Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211 (United States)] [Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Dale, Gregory E. [High Power Electrodynamics Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [High Power Electrodynamics Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2014-02-15

    The high output voltages from piezoelectric transformers are currently being used to accelerate charged particle beams for x-ray and neutron production. Traditional methods of characterizing piezoelectric transformers (PTs) using electrical probes can decrease the voltage transformation ratio of the device due to the introduction of load impedances on the order of hundreds of kiloohms to hundreds of megaohms. Consequently, an optical diagnostic was developed that used the photoelastic and electro-optic effects present in piezoelectric materials that are transparent to a given optical wavelength to determine the internal stress and electric field. The combined effects of the piezoelectric, photoelastic, and electro-optic effects result in a time-dependent change the refractive indices of the material and produce an artificially induced, time-dependent birefringence in the piezoelectric material. This induced time-dependent birefringence results in a change in the relative phase difference between the ordinary and extraordinary wave components of a helium-neon laser beam. The change in phase difference between the wave components was measured using a set of linear polarizers. The measured change in phase difference was used to calculate the stress and electric field based on the nonlinear optical properties, the piezoelectric constitutive equations, and the boundary conditions of the PT. Maximum stresses of approximately 10 MPa and electric fields of as high as 6 kV/cm were measured with the optical diagnostic. Measured results were compared to results from both a simple one-dimensional (1D) model of the piezoelectric transformer and a three-dimensional (3D) finite element model. Measured stresses and electric fields along the length of an operating length-extensional PT for two different electrical loads were within at least 50 % of 3D finite element simulated results. Additionally, the 3D finite element results were more accurate than the results from the 1D model for a wider range of electrical load impedances under test.

  11. FIFO Based Multicast Scheduling Algorithm for VOQ Packet Switches

    E-Print Network [OSTI]

    Pan, Deng

    FIFO Based Multicast Scheduling Algorithm for VOQ Packet Switches Deng Pan and Yuanyuan Yang Abstract--Many networking/computing applications require high speed switching for multicast traffic at the switch/router level to save network bandwidth. However, existing queueing based packet switches

  12. Infrared detection with high-[Tc] bolometers and response of Nb tunnel junctions to picosecond voltage pulses

    SciTech Connect (OSTI)

    Verghese, S.

    1993-05-01

    Oxide superconductors with high critical temperature [Tc] make sensitive thermometers for several types of infrared bolometers. The authors built composite bolometers with YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta

  13. Stable nonlinear Mach-Zehnder fiber switch

    DOE Patents [OSTI]

    Digonnet, Michel J. F. (Palo Alto, CA); Shaw, H. John (Palo Alto, CA); Pantell, Richard H. (Menlo Park, CA); Sadowski, Robert W. (Camp Doha, KW)

    1999-01-01

    An all-optical fiber switch is implemented within a short Mach-Zehnder interferometer configuration. The Mach-Zehnder switch is constructed to have a high temperature stability so as to minimize temperature gradients and other thermal effects which result in undesirable instability at the output of the switch. The Mach-Zehnder switch of the preferred embodiment is advantageously less than 2 cm in length between couplers to be sufficiently short to be thermally stable, and full switching is accomplished by heavily doping one or both of the arms between the couplers so as to provide a highly nonlinear region within one or both of the arms. A pump input source is used to affect the propagation characteristics of one of the arms to control the output coupling ratio of the switch. Because of the high nonlinearity of the pump input arm, low pump powers can be used, thereby alleviating difficulties and high cost associated with high pump input powers.

  14. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, D.B.

    1994-07-19

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination. 9 figs.

  15. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, Dario B. (DeSoto, TX)

    1994-01-01

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination.

  16. Cancer: A suppression switch

    E-Print Network [OSTI]

    Starobinets, H; Debnath, J

    2013-01-01

    Cancer A suppression switch The status of the protein p53it seems that p53 acts as a switch in pancreatic cancer thatthe ability of p53 to switch the clinical outcome of

  17. Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages

    DOE Patents [OSTI]

    Su, Gui-Jia [Knoxville, TN

    2005-11-29

    A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

  18. Double row loop-coil configuration for high-speed electrodynamic maglev suspension, guidance, propulsion and guideway directional switching

    DOE Patents [OSTI]

    He, Jianliang (Naperville, IL); Rote, Donald M. (Lagrange, IL)

    1996-01-01

    A stabilization and propulsion system comprising a series of loop-coils arranged in parallel rows wherein two rows combine to form one of two magnetic rails. Levitation and lateral stability are provided when the induced field in the magnetic rails interacts with the superconducting magnets mounted on the magnetic levitation vehicle. The loop-coils forming the magnetic rails have specified dimensions and a specified number of turns and by constructing differently these specifications, for one rail with respect to the other, the angle of tilt of the vehicle can be controlled during directional switching. Propulsion is provided by the interaction of a traveling magnetic wave associated with the coils forming the rails and the super conducting magnets on the vehicle.

  19. Double row loop-coil configuration for high-speed electrodynamic maglev suspension, guidance, propulsion and guideway directional switching

    DOE Patents [OSTI]

    He, J.; Rote, D.M.

    1996-05-21

    A stabilization and propulsion system are disclosed comprising a series of loop-coils arranged in parallel rows wherein two rows combine to form one of two magnetic rails. Levitation and lateral stability are provided when the induced field in the magnetic rails interacts with the superconducting magnets mounted on the magnetic levitation vehicle. The loop-coils forming the magnetic rails have specified dimensions and a specified number of turns and by constructing differently these specifications, for one rail with respect to the other, the angle of tilt of the vehicle can be controlled during directional switching. Propulsion is provided by the interaction of a traveling magnetic wave associated with the coils forming the rails and the superconducting magnets on the vehicle. 12 figs.

  20. Eliminate Voltage Unbalance

    SciTech Connect (OSTI)

    Not Available

    2000-01-01

    This two-page abstract provides tips for plant managers on checking and monitoring motor voltage unbalance to improve performance and life-span of industrial motors.

  1. Eliminate Voltage Unbalance

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to the voltage unbalance. Unbalanced currents lead to torque pulsations, increased vibrations and mechanical stresses, increased losses resulting in lower efficiency, and...

  2. Voltage Control Technical Conference

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-08-Voltage-Control-Technical-Conference Sign In About | Careers | Contact | Investors | bpa.gov Search News & Us Expand News & Us Projects & Initiatives Expand Projects &...

  3. Latching relay switch assembly

    DOE Patents [OSTI]

    Duimstra, Frederick A. (Anaheim Hills, CA)

    1991-01-01

    A latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes at least one permanent magnet and at least one electromagnet. The respective sections are, generally, arranged in separate locations or cavities in the assembly. The switch is latched by a permanent magnet assembly and selectively switched by an overriding electromagnetic assembly.

  4. Investigation of the spatiotemporal characteristics of the electric field in the Ne-H{sub 2} plasma of a beam-type high-voltage pulsed discharge

    SciTech Connect (OSTI)

    Demkin, V. P.; Mel'nichuk, S. V.; Borisov, A. V.; Bardin, S. S. [National Research Tomsk State University, 36, Lenin Ave., 634050 Tomsk (Russian Federation)] [National Research Tomsk State University, 36, Lenin Ave., 634050 Tomsk (Russian Federation)

    2013-12-15

    In the present work, the spatiotemporal dynamics of the electric field E(x, t) of plasma produced by a beam-type high-voltage pulsed discharge is investigated. The electric field strength E(x, t) in an accelerating gap and in a plasma flare was determined from the measured Stark splitting of the H{sub ?} hydrogen line. The obtained dependence E(x, t) was used to calculate the electron distribution function and the spectral line intensities in the accelerating gap and in the plasma flare by the method of statistical modeling. The calculated population of He atomic states excited by electron impact and their comparison with the measured spectral line intensities I(?, x, t) demonstrate that a reverse electric field retarding the electron motion and leading to electron beam degradation must be present in the plasma flare near the grid. Measurement of the field strength from the Stark splitting of the H{sub ?} line demonstrates that it can reach considerable values.

  5. Radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, Gordon E. (Albuquerque, NM)

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  6. ABBGroup-1-High voltage lab

    E-Print Network [OSTI]

    Basse, Nils Plesner

    to interrupt the current... Fault arc at a disconnector Fault arc in a substation #12;©ABBGroup-5- 3-Sep-07 of the physical processes · Optimisation of design through simulation · Reduction of development tests/costs

  7. ABBGroup-1-High voltage lab

    E-Print Network [OSTI]

    Basse, Nils Plesner

    to interrupt the current... Fault arc at a disconnector Fault arc in a substation #12;©ABBGroup-5- 3-Sep-07 tests/costs A detailed understanding of arc physics and fluid dynamics is necessary for the development

  8. Voltage verification unit

    DOE Patents [OSTI]

    Martin, Edward J. (Virginia Beach, VA)

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  9. A New Approach to Switch Fabrics based on Mini-Router Grids and Output Queueing

    E-Print Network [OSTI]

    Karadeniz, T.; Dabirmoghaddam, A.; Goren, Y.; Garcia-Luna-Aceves, J.J.

    2015-01-01

    The Tiny Tera: A Packet Switch Core. 1996. T. E. Anderson,C. P. Thacker, “High- speed switch scheduling for local-areaalgorithms for input-queued switches,” COMPUTER NETWORKS AND

  10. Effects of High-Altitude Electromagnetic Pulse (HEMP) on the Northern Telecom Inc. DMS-100 (trademark) switch. Volume 1. Executive summary. Final report

    SciTech Connect (OSTI)

    Not Available

    1988-09-01

    This report is part of a three volume set that presents the results of simulated High Altitude Electromagnetic Pulse (HEMP) testing of a DMS-100 switching system. This volume presents a brief discussion of the test events and the test results, and summarizes the conclusions and recommendations of the test program. Volume II is a detailed description of the test procedures, the test results, and the mitigation alternatives evaluated. Volume II also presents a discussion of the conclusions and recommendations of the program. Volume III describes the post-test analysis of the measured electromagnetic fields and induced transients. Volume III also includes a comparison of the characteristic attributes of the various simulator environments.

  11. Electronically commutated serial-parallel switching for motor windings

    DOE Patents [OSTI]

    Hsu, John S. (Oak Ridge, TN)

    2012-03-27

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  12. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect (OSTI)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ?40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  13. A physically based model for dielectric charging in an integrated optical MEMS wavelength selective switch.

    SciTech Connect (OSTI)

    Nielson, Gregory N.; Barbastathis, George (Massachusetts Institute of Technology)

    2005-07-01

    A physical parameter based model for dielectric charge accumulation is proposed and used to predict the displacement versus applied voltage and pull-in response of an electrostatic MEMS wavelength selective integrated optical switch.

  14. A Merged two-stage power conversion architecture with switched capacitor circuit for an LED driver module

    E-Print Network [OSTI]

    Lim, Seungbum

    2012-01-01

    In a power converter specified to convert from wide-range and high-level DC voltage or AC line voltage to low-level DC voltage, satisfying high efficiency, high power density, and high power factor is challenging because ...

  15. Vehicle Technologies Office Merit Review 2014: High Energy Density Li-ion Cells for EV’s Based on Novel, High Voltage Cathode Material Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Farasis Energy, Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high energy density Li...

  16. Vehicle Technologies Office Merit Review 2015: High Energy Density Li-ion Cells for EV’s Based on Novel, High Voltage Cathode Material Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Farasis at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high energy density Li-ion cells for...

  17. Latching micro optical switch

    DOE Patents [OSTI]

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  18. High open-circuit voltage small-molecule p-DTS(FBTTh 2 )2.ICBA bulk heterojunction solar cells – morphology, excited-state dynamics, and photovoltaic performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ko Kyaw, Aung Ko; Gehrig, Dominik; Zhang, Jie; Huang, Ye; Bazan, Guillermo C.; Laquai, Frédéric; Nguyen, Thuc -Quyen

    2014-11-27

    The photovoltaic performance of bulk heterojunction solar cells using the solution-processable small molecule donor 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[c][1,2,5]thiadiazole) (p-DTS(FBTTh2)2 in combination with indene-C60 bis-adduct (ICBA) as an acceptor is systematically optimized by altering the processing conditions. A high open-circuit voltage of 1 V, more than 0.2 V higher than that of a p-DTS(FBTTh2)2:PC70BM blend, is achieved. However, the power conversion efficiency remains around 5% and thus is lower than ~8% previously reported for p-DTS(FBTTh2)2:PC70BM. Transient absorption (TA) pump–probe spectroscopy over a wide spectral (Vis-NIR) and dynamic (fs to ?s) range in combination with multivariate curve resolution analysis of the TA data reveals thatmore »generation of free charges is more efficient in the blend with PC70BM as an acceptor. In contrast, blends with ICBA create more coulombically bound interfacial charge transfer (CT) states, which recombine on the sub-nanosecond timescale by geminate recombination. Furthermore, the ns to ?s charge carrier dynamics in p-DTS(FBTTh2)2:ICBA blends are only weakly intensity dependent implying a significant contribution of recombination from long-lived CT states and trapped charges, while those in p-DTS(FBTTh2)2:PC70BM decay via an intensity-dependent recombination mechanism indicating that spatially separated (free) charge carriers are observed, which can be extracted as photocurrent from the device.« less

  19. Optically Controlled 22 Switching Cell for Packet-Switched Networks

    E-Print Network [OSTI]

    Wai, Ping-kong Alexander

    Optically Controlled 2×2 Switching Cell for Packet-Switched Networks C. C. Lee1 , L. F. K. Lui1 a 10 Gb/s optically controlled 2×2 switching cell which can be used to construct N×N all-optical switches for all-optical packet-switched networks. All-optical packet-switching is performed based

  20. Application & testing of high temperature materials for solenoid coils

    SciTech Connect (OSTI)

    Sanchez, R.O.; Archer, W.E.; Zich, J.L.

    1997-08-01

    Sandia National Laboratories has designed and proven-in two new Solenoid coils for a highly-reliable electromechanical switch. Mil-Spec Magnetics Inc., Walnut CA manufactured the coils. The new design utilizes two new materials: Liquid Crystal Polymer (Vectra C130) for the bobbin and Thermal Barrier Silicone (VI-SIL V-658) for the encapsulant. The use of these two new materials solved most of the manufacturing problems inherent in the old Sandia design. The coils are easier to precision wind and more robust for handling, testing, and storage. The coils have some unique weapon related safety requirements. The most severe of these requirements is the 400{degrees}C, 1600 V test. The coils must not, and did not, produce any outgassing products to affect the voltage breakdown between contacts in the switch at these temperatures and voltages. Actual coils in switches were tested under these conditions. This paper covers the prove-in of this new coil design.

  1. Shape Similarity Measures for the Design of Small RNA Switches

    E-Print Network [OSTI]

    Barash, Danny

    Shape Similarity Measures for the Design of Small RNA Switches http://www.jbsdonline.com Abstract Conformational switching in the secondary structure of RNAs has recently attracted consid- erable attention that were found in bacteria and offer a unique regulation mechanism based on switching between two highly

  2. SBR switching by fuzzy pattern recognition S. Marsili-Libelli

    E-Print Network [OSTI]

    SBR switching by fuzzy pattern recognition S. Marsili-Libelli Department of Systems and Computers is normally operated on a fixed switching schedule with ample margin for possible inaccuracies, with the result that the process operation is highly inefficient. This paper proposes a switching strategy based

  3. Delay Analysis of Combined Input-Crosspoint Queueing Switches

    E-Print Network [OSTI]

    Hamdi, Mounir

    Delay Analysis of Combined Input-Crosspoint Queueing Switches Ge Nong, Ning Situ and Mounir Hamdi Abstract-- The switch architecture with the combined input- crosspoint queueing (CICQ) scheme has been recognized as a practical promising solution for building cost-effective high- performance switches. In an N

  4. Insight into the Atomic Structure of High-Voltage Spinel LiNi0.5Mn1.5O4 Cathode Material in the First Cycle

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huang, Xuejie [Chinese Academy of Sciences, Beijing (China); Yu, Xiqian [Brookhaven National Laboratory (BNL), Upton, NY (United States); Lin, Mingxiang [Chinese Academy of Sciences, Beijing (China); Ben, Liubin [Chinese Academy of Sciences, Beijing (China); Sun, Yang [Chinese Academy of Sciences, Beijing (China); Wang, Hao [Chinese Academy of Sciences, Beijing (China); Yang, Zhenzhong [Chinese Academy of Sciences, Beijing (China); Gu, Lin [Chinese Academy of Sciences, Beijing (China); Yang, Xiao -Qing [Brookhaven National Laboratory (BNL), Upton, NY (United States); Zhao, Haofei [Chinese Academy of Sciences, Beijing (China); Yu, Richeng [Chinese Academy of Sciences, Beijing (China); Armand, Michel [CIC Energigune, Alava (Spain)

    2015-01-13

    Application of high-voltage spinel LiNi0.5Mn1.5O4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi0.5Mn1.5O4 cathode material. Although it is well-known that the structure of LiNi0.5Mn1.5O4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations of local atomic-level and average structure of LiNi0.5Mn1.5O4 during first cycle (3.5–4.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi0.5Mn1.5O4//Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi0.5Mn1.5O4 particles show migration of TM ions into tetrahedral Li sites to form a Mn3O4-like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi0.5Mn1.5O4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi0.5Mn1.5O4 structure to obtain better electrochemical performance.

  5. Insight into the Atomic Structure of High-Voltage Spinel LiNi0.5Mn1.5O4 Cathode Material in the First Cycle

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huang, Xuejie; Yu, Xiqian; Lin, Mingxiang; Ben, Liubin; Sun, Yang; Wang, Hao; Yang, Zhenzhong; Gu, Lin; Yang, Xiao -Qing; Zhao, Haofei; et al

    2014-12-22

    Application of high-voltage spinel LiNi0.5Mn1.5O4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi0.5Mn1.5O4 cathode material. Although it is well-known that the structure of LiNi0.5Mn1.5O4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations ofmore »local atomic-level and average structure of LiNi0.5Mn1.5O4 during first cycle (3.5–4.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi0.5Mn1.5O4//Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi0.5Mn1.5O4 particles show migration of TM ions into tetrahedral Li sites to form a Mn3O4-like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi0.5Mn1.5O4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi0.5Mn1.5O4 structure to obtain better electrochemical performance.« less

  6. Electro-optical voltage sensor head

    DOE Patents [OSTI]

    Woods, Gregory K. (Idaho Falls, ID)

    1998-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  7. Electro-optical voltage sensor head

    DOE Patents [OSTI]

    Woods, G.K.

    1998-03-24

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 6 figs.

  8. Data center coolant switch

    DOE Patents [OSTI]

    Iyengar, Madhusudan K.; Parida, Pritish R.; Schultz, Mark D.

    2015-10-06

    A data center cooling system is operated in a first mode; it has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during the first mode. The first heat transfer fluid is a relatively high performance heat transfer fluid (as compared to the second fluid), and has a first heat transfer fluid freezing point. A determination is made that an appropriate time has been reached to switch from the first mode to a second mode. Based on this determination, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid, as compared to the first heat transfer fluid. It has a second heat transfer fluid freezing point lower than the first heat transfer fluid freezing point, and the second heat transfer fluid freezing point is sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

  9. The dynamics of enzymatic switch cascades

    E-Print Network [OSTI]

    Mukherji, Shankar, 1982-

    2004-01-01

    We examine the dynamics of the mitogen-activated protein kinase (MAPK) multi-step enzymatic switching cascade, a highly conserved architecture utilised in cellular signal transduction. In treating the equations of motion, ...

  10. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect (OSTI)

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  11. Effective switching frequency multiplier inverter

    DOE Patents [OSTI]

    Su, Gui-Jia (Oak Ridge, TN); Peng, Fang Z. (Okemos, MI)

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  12. Enhanced open voltage of BiFeO{sub 3} polycrystalline film by surface modification of organolead halide perovskite

    SciTech Connect (OSTI)

    Zhao, Pengjun; Bian, Liang; Xu, Jinbao Chang, Aimin; Wang, Lei

    2014-07-07

    Inorganic-organolead halide perovskite CH{sub 3}NH{sub 3}PbI{sub 3} modified BiFeO{sub 3} polycrystalline film has been established. The composite photoelectrode presents much larger open voltage and several magnitudes superior photoelectric conversion performance in comparison to the ordinary BiFeO{sub 3} polycrystalline film. The I-V curve shows that the short-circuit current (J{sub sc}) is 1.74?mA·cm{sup ?2} and open-circuit voltage (V{sub oc}) is 1.62?V, the device's photon to current efficiency is over 1%. The large open voltage and high photovoltaic efficiency is believed to attributed to the spontaneous polarization of composite perovskite induced by BiFeO{sub 3} lattice and modified reduced work function of the modified BiFeO{sub 3} surface. Our results clearly show that the present BiFeO{sub 3}-CH{sub 3}NH{sub 3}PbI{sub 3} planar device is capable to generate a large voltage in macro scale under visible light, leading an approach to further applications on photodetectors and optoelectronic switch.

  13. Switching Graphs Jan Friso Groote

    E-Print Network [OSTI]

    Groote, Jan Friso

    Switching Graphs Jan Friso Groote J.F.Groote@tue.nl Bas Ploeger S.C.W.Ploeger@tue.nl Department The Netherlands Abstract Switching graphs are graphs containing switches. By using boolean functions called switch settings, these switches can be put in a fixed direction to obtain an ordinary graph. For many problems

  14. Circuit switches have simpler data paths and are potentially much faster than

    E-Print Network [OSTI]

    McKeown, Nick

    2 Circuit switches have simpler data paths and are potentially much faster than packet switches. Taking advantage of this dif- ference makes very high capacity all-optical circuit switches feasible, whereas all-optical packet switches are a long way from com- mercial practicality. Peak

  15. FIFO-Based Multicast Scheduling Algorithm for Virtual Output Queued Packet Switches

    E-Print Network [OSTI]

    Pan, Deng

    FIFO-Based Multicast Scheduling Algorithm for Virtual Output Queued Packet Switches Deng Pan/computing applications require high speed switching for multicast traffic at the switch/router level to save network bandwidth. However, existing queuing-based packet switches and scheduling algorithms cannot perform well

  16. Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

    DOE Patents [OSTI]

    Mar, Alan (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo (Albuquerque, NM)

    2007-02-06

    An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

  17. Switching dynamics in cholesteric blue phases

    E-Print Network [OSTI]

    A. Tiribocchi; G. Gonnella; D. Marenduzzo; E. Orlandini

    2011-03-30

    Blue phases are networks of disclination lines, which occur in cholesteric liquid crystals near the transition to the isotropic phase. They have recently been used for the new generation of fast switching liquid crystal displays. Here we study numerically the steady states and switching hydrodynamics of blue phase I (BPI) and blue phase II (BPII) cells subjected to an electric field. When the field is on, there are three regimes: for very weak fields (and strong anchoring at the boundaries) the blue phases are almost unaffected, for intermediate fields the disclinations twist (for BPI) and unzip (for BPII), whereas for very large voltages the network dissolves in the bulk of the cell. Interestingly, we find that a BPII cell can recover its original structure when the field is switched off, whereas a BPI cell is found to be trapped more easily into metastable configurations. The kinetic pathways followed during switching on and off entails dramatic reorganisation of the disclination networks. We also discuss the effect of changing the director field anchoring at the boundary planes and of varying the direction of the applied field.

  18. Large aperture optical switching devices

    SciTech Connect (OSTI)

    Goldhar, J.; Henesian, M.A.

    1983-12-12

    We have developed a new approach to constructing large aperture optical switches for next generation inertial confinement fusion lasers. A transparent plasma electrode formed in low pressure ionized gas acts as a conductive coating to allow the uniform charging of the optical faces of an electro-optic material. In this manner large electric fields can be applied longitudinally to large aperture, high aspect ratio Pockels cells. We propose a four-electrode geometry to create the necessary high conductivity plasma sheets, and have demonstrated fast (less than 10 nsec) switching in a 5x5 cm aperture KD*P Pockels cell with such a design. Detaid modelling of Pockels cell performance with plasma electrodes has been carried out for 15 and 30 cm aperture designs.

  19. Organometallic Spintronics: Dicobaltocene Switch

    E-Print Network [OSTI]

    Baranger, Harold U.

    Organometallic Spintronics: Dicobaltocene Switch Rui Liu, San-Huang Ke,, Harold U. Baranger Received August 16, 2005 ABSTRACT A single-molecule spintronic switch and spin valve using two cobaltocene phenomena that have come to light in the two fields of spintronics and single-molecule transport suggest

  20. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  1. Single Atom Plasmonic Switch

    E-Print Network [OSTI]

    Emboras, Alexandros; Ma, Ping; Haffner, Christian; Luisier, Mathieu; Hafner, Christian; Schimmel, Thomas; Leuthold, Juerg

    2015-01-01

    The atom sets an ultimate scaling limit to Moores law in the electronics industry. And while electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling-similar to electronics-is only limited by the atom. More precisely, we introduce an electrically controlled single atom plasmonic switch. The switch allows for fast and reproducible switching by means of the relocation of an individual or at most - a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ration of 10 dB and operation at room temperature with femtojoule (fJ) power consumption for a single switch operation. This demonstration of a CMOS compatible, integrated quantum device allowing to control photons at the single-atom level opens intriguing perspectives for a fully i...

  2. Electro-optic voltage sensor for sensing voltage in an E-field

    DOE Patents [OSTI]

    Woods, G.K.; Renak, T.W.

    1999-04-06

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 18 figs.

  3. Electro-optic voltage sensor for sensing voltage in an E-field

    DOE Patents [OSTI]

    Woods, Gregory K. (Idaho Falls, ID); Renak, Todd W. (Idaho Falls, ID)

    1999-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  4. Sequential circuit design for radiation hardened multiple voltage integrated circuits

    DOE Patents [OSTI]

    Clark, Lawrence T. (Phoenix, AZ); McIver, III, John K. (Albuquerque, NM)

    2009-11-24

    The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

  5. Multiprocessor switch with selective pairing

    DOE Patents [OSTI]

    Gara, Alan; Gschwind, Michael K; Salapura, Valentina

    2014-03-11

    System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or processor cores that provide one highly reliable thread for high-reliability connect with a system components such as a memory "nest" (or memory hierarchy), an optional system controller, and optional interrupt controller, optional I/O or peripheral devices, etc. The memory nest is attached to a selective pairing facility via a switch or a bus

  6. TrueWay: A Highly Scalable Multi-Plane Multi-Stage Buffered Packet Switch H. Jonathan Chao, Jinsoo Park, Sertac Artan, Shi Jiang

    E-Print Network [OSTI]

    Chao, Jonathan

    , Brooklyn, NY 11201 chao@poly.edu, jspark118@yahoo.com, {sartan01, sjiang01}@utopia.poly.edu Guansong Zhang growth, researchers have been continually exploring new switch architectures with new electronic the multi-plane multi-stage buffered architecture. For instance, Cisco's CRS-1 system [4] based on Benes

  7. Abstract Designers of advanced power converters may choose from a variety of switching device models for simulation. Some

    E-Print Network [OSTI]

    Kimball, Jonathan W.

    Abstract ­ Designers of advanced power converters may choose from a variety of switching device to the design of a typical power converter than voltage transients. Averaging is used in [7] to create a power dissipation model. The present work instead inserts power dissipating elements at each switching edge

  8. Resistive switching Resistive Switching in Nanogap Systems on

    E-Print Network [OSTI]

    Zhong, Lin

    Resistive switching Resistive Switching in Nanogap Systems on SiO2 Substrates Jun Yao, Lin Zhong-controlled resistive switching in various gap systems on SiO2 substrates is reported. The nanoscale-sized gaps are made. The switching site is further reduced in size by using multiwalled carbon nanotubes and single-walled carbon

  9. Design of Wavelength Converting Switches for Optical Burst Switching

    E-Print Network [OSTI]

    Design of Wavelength Converting Switches for Optical Burst Switching Jeyashankher Ramamirtham, Jonathan Turner Abstract-- Optical Burst Switching (OBS) is an experi- mental network technology. In this paper, we study two designs for wavelength converting switches that are suitable for use in optical

  10. Integrated photonic switches for nanosecond packet-switched

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Integrated photonic switches for nanosecond packet-switched optical wavelength conversion Onur ofidaner@stanford.edu Abstract: We present a multifunctional photonic switch that monolithically integrates-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations

  11. An optical switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Hunter, S.R.

    1987-04-30

    The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

  12. SWITCH Model AND Data Description: 2050 Timeframe................................................ 2 SWITCH Model Description ........................................................................................................2

    E-Print Network [OSTI]

    Kammen, Daniel M.

    1 SWITCH Model AND Data Description: 2050 Timeframe................................................ 2 SWITCH Model Description.................................................................................................................................41 #12;2 SWITCH MODEL AND DATA DESCRIPTION: 2050 TIMEFRAME December 2011 SWITCH was created

  13. A Q-switched Ho:YAG laser assisted nanosecond time-resolved T-jump transient mid-IR absorbance spectroscopy with high sensitivity

    E-Print Network [OSTI]

    Wang, Wei Hua

    dynamical structures and the folding/unfolding kinetics of proteins in solution. A home-built setup of T is composed of a Q-switched Cr, Tm, Ho:YAG laser with an output wavelength at 2.09 µm as the T-jump heating source, and a continuous working CO laser tunable from 1580 to 1980 cm-1 as the IR probe. The results

  14. A radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  15. DOI: 10.1002/ente.201((will be filled in by the editorial staff)) Ultrathin surface modification by atomic layer deposition on high voltage

    E-Print Network [OSTI]

    Zhou, Chongwu

    , lithium ion batteries have been widely recognized as highly efficient power source and energy storage of developing high energy and long life lithium ion batteries with highly scalable LiNi0.5Mn1.5O4 preparation and broadly applicable ALD process. Introduction Since first commercialized by Sony in the early 1990s

  16. Reduction of Shaft Voltages and Bearing Currents in Five-Phase Induction Motor 

    E-Print Network [OSTI]

    Hussain, Hussain

    2012-07-16

    are studied and a new solution is proposed. First, theory of shaft voltage and bearing current are presented. The causes are identified and current solutions are discussed. Then, new switching patterns are proposed for the five-phase induction motor. The new...

  17. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 3 Electrochemistry

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  18. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 2 Materials

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  19. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 1 Baseline Protocols and Analysis

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  20. Thermionic gas switch

    DOE Patents [OSTI]

    Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

    1984-04-05

    The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

  1. Impedance Control Network Resonant dc-dc Converter for Wide-Range High-Efficiency Operation

    E-Print Network [OSTI]

    Lu, Jie

    This paper introduces a new resonant converter architecture that utilizes multiple inverters and a lossless impedance control network (ICN) to maintain zero voltage switching (ZVS) and near zero current switching (ZCS) ...

  2. Voltage sensor and dielectric material

    DOE Patents [OSTI]

    Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

    2006-10-17

    A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

  3. 96 IEEE POWER ELECTRONICS LETTERS, VOL. 2, NO. 3, SEPTEMBER 2004 Low-Input-Voltage, Low-Power Boost

    E-Print Network [OSTI]

    Chapman, Patrick

    to connect varying voltage to the fixed voltage load with high efficiency. Individual fuel cells naturally are investigated when a low input voltage is used. Low- input-voltage sources include single fuel cells, single solar cells, and thermoelectric devices. The primary context is interfacing single micro fuel cells

  4. Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory

    SciTech Connect (OSTI)

    Miranda, E., E-mail: enrique.miranda@uab.cat; Suñé, J. [Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Vallés, Barcelona (Spain)] [Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Vallés, Barcelona (Spain); Mehonic, A.; Kenyon, A. J. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom)] [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom)

    2013-11-25

    A simple analytic model for the electron transport through filamentary-type structures in Si-rich silica (SiO{sub x})-based resistive switches is proposed. The model is based on a mesoscopic description and is able to account for the linear and nonlinear components of conductance that arise from both fully and partially formed conductive channels spanning the dielectric film. Channels are represented by arrays of identical scatterers whose number and quantum transmission properties determine the current magnitude in the low and high resistance states. We show that the proposed model not only reproduces the experimental current-voltage (I-V) characteristics but also the normalized differential conductance (dln(I)/dln(V)-V) curves of devices under test.

  5. High-Efficiency, Wide-Band Three-Phase Rectifiers and Adaptive...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    combines low-voltage synchronous rectification with true three-phase, bridgeless power factor correction. This approach reduces conduction and switching losses in the...

  6. Performance Characteristics Of The Reduced Common Mode Voltage Near State PWM Method

    E-Print Network [OSTI]

    Hava, Ahmet

    induction and permanent magnet machines are driven through three-phase Voltage Source Inverters (VSI) which to generate the required output voltages. Conventional Continuous PWM (CPWM) methods such as Space Vector PWM with rather smaller IGBT gate resistances), and high DC bus voltage levels, the CMVs generated result

  7. Tailoring the surface properties of LiNi0.4Mn0.4Co0.2O? by titanium substitution for improved high voltage cycling performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wolff-Goodrich, Silas; Xin, Huolin L.; Lin, Feng; Markus, Isaac M.; Nordlund, Dennis; Asta, Mark; Doeff, Marca M.

    2015-07-30

    The present research aims to provide insights into the behavior of LiNi0.4Mn0.4Co0.2O2 (NMC442) and LiNi0.4Mn0.4Co0.2O? (NMC442-Ti02) cathode materials under galvanostatic cycling to high potentials, in the context of previous work which predicted that Ti-substituted variants should deliver higher capacities and exhibit better cycling stability than the unsubstituted compounds. It is found that NMC cathodes containing Ti show equivalent capacity fading but greater specific capacity than those without Ti in the same potential range. When repeatedly charged to the same degree of delithiation, NMC cathodes containing Ti showed better capacity retention. Soft x-ray absorption spectroscopy (XAS) spectra for Mn and Comore »indicated increased reduction in these elements for NMC cathodes without Ti, indicating that the substitution of Ti for Co acts to suppress the formation of a high impedance rock salt phase at the surface of NMC cathode particles. The results of this study validate the adoption of a facile change to existing NMC chemistries to improve cathode capacity retention under high voltage cycling conditions.« less

  8. Audio Switch SpeakersAvotec

    E-Print Network [OSTI]

    Walker, Matthew P.

    Control Monitor Keyboard & Mouse Audio Switch Control SpeakersAvotec USB HUB USB HUB USB CAT5FORP Avotec Projector Video Switch VGA RCA RCA 3T Audio and Visual Stimulus Setup DVD Drive K&MSiemens RCA.via CAT5 split at operator room Video Switch Projector Monitor VGA DVD Drive E-Prime Dongle Control

  9. Analysis of the Ultra-fast Switching Dynamics in a Hybrid MOSFET/Driver

    SciTech Connect (OSTI)

    Tang, T.; Burkhart, C.; /SLAC

    2011-08-17

    The turn-on dynamics of a power MOSFET during ultra-fast, {approx} ns, switching are discussed in this paper. The testing was performed using a custom hybrid MOSFET/Driver module, which was fabricated by directly assembling die-form components, power MOSFET and drivers, on a printed circuit board. By using die-form components, the hybrid approach substantially reduces parasitic inductance, which facilitates ultra-fast switching. The measured turn on time of the hybrid module with a resistive load is 1.2 ns with an applied voltage of 1000 V and drain current of 33 A. Detailed analysis of the switching waveforms reveals that switching behavior must be interpreted differently in the ultra-fast regime. For example, the gate threshold voltage to turn on the device is observed to increase as the switching time decreases. Further analysis and simulation of MOSFET switching behavior shows that the minimum turn on time scales with the product of the drain-source on resistance and drain-source capacitance, R{sub DS(on)}C{sub OSS}. This information will be useful in power MOSFET selection and gate driver design for ultra-fast switching applications.

  10. Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

    DOE Patents [OSTI]

    Bittner, John W. (Shoreham, NY); Biscardi, Richard W. (Ridge, NY)

    1991-01-01

    An electronic measurement circuit for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals.

  11. 2730 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 49, NO. 6, NOVEMBER/DECEMBER 2013 A Novel Soft-Switching Bidirectional DCDC

    E-Print Network [OSTI]

    Mi, Chunting "Chris"

    areas, such as appliances, general industries, and aerospace, which include uninterruptible power circuit, which consists of a half-bridge power switch, an inductor, and capaci- tors. In order to realize, resonant power converter, zero-voltage switching (ZVS). I. INTRODUCTION BIDIRECTIONAL dc­dc converters can

  12. Synchronization of two Rossler systems with switching coupling

    E-Print Network [OSTI]

    Mattia Frasca; Arturo Buscarino; Marco Branciforte; Luigi Fortuna; Julien Clinton Sprott

    2015-07-07

    In this paper, we study a system of two Rossler oscillators coupled through a time-varying link, periodically switching between two values. We analyze the system behavior with respect to the frequency of the switching. By applying an averaging technique under the hypothesis of a high switching frequency, we find that although each value of the coupling does not produce synchronization, switching between the two at a high frequency stabilizes the synchronization manifold. However, we also find windows of synchronization below the value predicted by this technique, and we develop a master stability function to explain the appearance of these windows. Spectral properties of the system are a useful tool for understanding the dynamical properties and the synchronization failure in some intervals of the switching frequency. Numerical and experimental results in agreement with the analysis are presented.

  13. Load Balanced Birkho -von Neumann Switches, Part I: One-stage Bu ering

    E-Print Network [OSTI]

    Chang, Cheng-Shang

    Load Balanced Birkho#11;-von Neumann Switches, Part I: One-stage Bu#11;ering Cheng-Shang Chang Hsinchu 300, Taiwan, R.O.C. Abstract Motivated by the need for a simple and high performance switch architecture that scales up with the speed of #12;ber optics, we propose a switch architecture with two

  14. Frame-based Matching Algorithms for Optical Switches Yihan Li, Shivendra Panwar and H. Jonathan Chao

    E-Print Network [OSTI]

    Panwar, Shivendra S.

    Frame-based Matching Algorithms for Optical Switches Yihan Li, Shivendra Panwar and H. Jonathan used by fixed- length high-speed electronic switches to overcome head-of-line blocking. This is done, in every time slot, a new matching set is calculated and the switch fabric is updated to connect matched

  15. Optical Label Switching Technology and Energy-Efficient Future Networks S. J. Ben Yoo

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    Optical Label Switching Technology and Energy-Efficient Future Networks S. J. Ben Yoo Department traffic with extremely low energy consumption and high goodput. Keywords: Optical packet switching, optical label switching, energy efficient networks. 1. Introduction The future Internet is rapidly

  16. Low Cost RF MEMS Switches Fabricated on Microwave Laminate Printed Circuit Boards

    E-Print Network [OSTI]

    De Flaviis, Franco

    1 Low Cost RF MEMS Switches Fabricated on Microwave Laminate Printed Circuit Boards Hung-Pin Chang process for directly constructing RF MEMS capacitive switches has been developed on microwave laminate among components. Index Terms--RF MEMS switches, compressive molding planarization, high density

  17. Design of switches with reconfiguration latency Valentina Alaria, Andrea Bianco, Paolo Giaccone, Emilio Leonardi, Fabio Neri

    E-Print Network [OSTI]

    Design of switches with reconfiguration latency Valentina Alaria, Andrea Bianco, Paolo Giaccone switching fabrics (OSF) are considered to be appealing solutions for the design of high speed packet switches, due to their excellent scalability in terms of bandwidth and power consumption. Candidate

  18. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    SciTech Connect (OSTI)

    Prevosto, L.; Mancinelli, B.; Kelly, H.; Instituto de Física del Plasma , Departamento de Física, Facultad de Ciencias Exactas y Naturales Ciudad Universitaria Pab. I, 1428 Buenos Aires

    2013-12-15

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  19. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

    SciTech Connect (OSTI)

    Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

    2014-05-26

    We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

  20. CreditFlowControlled ATM over HIC Links in the ASICCOM ``ATLAS I'' SingleChip Switch

    E-Print Network [OSTI]

    Katevenis, Manolis G.H.

    flow control. 1. Introduction Switches are the building blocks for high­speed networks in which high adopted as the main high speed technology in both wide and local area networks. ATM has been architected­LAne Switch I): a general­purpose, single­chip gigabit ATM switch, with credit­based flow control, multiple

  1. Abacus switch: a new scalable multicast ATM switch H. Jonathan Chao and Jin-Soo Park

    E-Print Network [OSTI]

    Chao, Jonathan

    Abacus switch: a new scalable multicast ATM switch H. Jonathan Chao and Jin-Soo Park Polytechnic describes a new architecture for a scalable multicast ATM switch from a few tens to thousands of input ports. The switch, called Abacus switch, has a nonblocking memoryless switch fabric followed by small switch modules

  2. The quantum cryptographic switch

    E-Print Network [OSTI]

    Srinatha Narayanaswamy; Omkar Srikrishna; R. Srikanth; Subhashish Banerjee; Anirban Pathak

    2011-11-21

    We illustrate using a quantum system the principle of a cryptographic switch, in which a third party (Charlie) can control to a continuously varying degree the amount of information the receiver (Bob) receives, after the sender (Alice) has sent her information. Suppose Charlie transmits a Bell state to Alice and Bob. Alice uses dense coding to transmit two bits to Bob. Only if the 2-bit information corresponding to choice of Bell state is made available by Charlie to Bob can the latter recover Alice's information. By varying the information he gives, Charlie can continuously vary the information recovered by Bob. The performance of the protocol subjected to the squeezed generalized amplitude damping channel is considered. We also present a number of practical situations where a cryptographic switch would be of use.

  3. Plasma opening switch

    DOE Patents [OSTI]

    Savage, Mark E. (Albuquerque, NM); Mendel, Jr., Clifford W. (Albuquerque, NM)

    2001-01-01

    A command triggered plasma opening switch assembly using an amplification stage. The assembly surrounds a coaxial transmission line and has a main plasma opening switch (POS) close to the load and a trigger POS upstream from the main POS. The trigger POS establishes two different current pathways through the assembly depended on whether it has received a trigger current pulse. The initial pathway has both POS's with plasma between their anodes and cathodes to form a short across the transmission line and isolating the load. The final current pathway is formed when the trigger POS receives a trigger current pulse which energizes its fast coil to push the conductive plasma out from between its anode and cathode, allowing the main transmission line current to pass to the fast coil of the main POS, thus pushing its plasma out the way so as to establish a direct current pathway to the load.

  4. Optical fiber switch

    DOE Patents [OSTI]

    Early, James W. (Los Alamos, NM); Lester, Charles S. (San Juan Pueblo, NM)

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  5. Wide Viewing Angle Multi-domain In-Plane Switching LCD

    E-Print Network [OSTI]

    Wu, Shin-Tson

    ­15 [10,11]. In this paper, we investigate the bending angle effect on a MD IPS using the chevron The bending angle effect on a multi-domain in-plane switching liquid crystal display (MD IPS LCD) using the bending angle of the electrodes increases from 10 to 40 , the threshold voltage is lowered from 1.25 Vrms

  6. Automatic switching matrix

    DOE Patents [OSTI]

    Schlecht, Martin F. (Cambridge, MA); Kassakian, John G. (Newton, MA); Caloggero, Anthony J. (Lynn, MA); Rhodes, Bruce (Dorchester, MA); Otten, David (Newton, MA); Rasmussen, Neil (Sudbury, MA)

    1982-01-01

    An automatic switching matrix that includes an apertured matrix board containing a matrix of wires that can be interconnected at each aperture. Each aperture has associated therewith a conductive pin which, when fully inserted into the associated aperture, effects electrical connection between the wires within that particular aperture. Means is provided for automatically inserting the pins in a determined pattern and for removing all the pins to permit other interconnecting patterns.

  7. Micro helical polymeric structures produced by variable voltage direct electrospinning

    E-Print Network [OSTI]

    S. P. Shariatpanahi; A. Iraji zad; I. Abdollahzadeh; R. Shirsavar; D. Bonn; R. Ejtehadi

    2011-09-12

    Direct near field electrospinning is used to produce very long helical polystyrene microfibers in water. The pitch length of helices can be controlled by changing the applied voltage, allowing to produce both micro springs and microchannels. Using a novel high frequency variable voltage electrospinning method we found the helix formation speed and compared the experimental buckling frequency to theoretical expressions for viscous and elastic buckling. Finally we showed that the newmethod can be used to produce new periodic micro and nano structures.

  8. Electro-optic voltage sensor with beam splitting

    DOE Patents [OSTI]

    Woods, Gregory K. (Cornelius, OR); Renak, Todd W. (Idaho Falls, ID); Davidson, James R. (Idaho Falls, ID); Crawford, Thomas M. (Idaho Falls, ID)

    2002-01-01

    The invention is a miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware typically found in the prior art. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  9. Electro-optic voltage sensor with Multiple Beam Splitting

    DOE Patents [OSTI]

    Woods, Gregory K. (Cornelius, OR); Renak, Todd W. (Idaho Falls, ID); Crawford, Thomas M. (Idaho Falls, ID); Davidson, James R. (Idaho Falls, ID)

    2000-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  10. RF MEMS Capacitive Switches Fabricated with HDICP CVD SiNx C.H. Chang, J.Y. Qian, B.A.Cetiner, Q. Xu, M. Bachman, H.K. Kim* Y. Ra*, F. De Flaviis and G.P.Li

    E-Print Network [OSTI]

    De Flaviis, Franco

    RF MEMS Capacitive Switches Fabricated with HDICP CVD SiNx C.H. Chang, J.Y. Qian, B.A.Cetiner, Q plasma chemical vapor deposition (HDICP CVD) process in RF MEMS switch fabrication is addressed of surface roughness, breakdown voltage and RF MEMS switch performance. It is found that HDICP CVD can

  11. Software-Hardware Co-Defined Network Switch (SHADES) for a Label Switching Protocol

    E-Print Network [OSTI]

    Karadeniz, Turhan

    2015-01-01

    4.2.1 The Switch Fabric . . . . . . . . . . .of a Network-on-Chip Based Load Balancing Switch Fabric 4.15.3 MRG Based Switch Fabric Architecture . . . . . . . .

  12. A Fully Integrated Switched-Capacitor DC-DC Converter with Dual Output for Low Power Application

    E-Print Network [OSTI]

    Ayers, Joseph

    . The entire converter system uses two 2-to-1 converter blocks. The upper output voltage (3.2V) is generated from the 2-to-1_up converter by means of averaging the 5V input and the generated lower output voltage is designed using high-voltage 0.35m BCDMOS technology. Both output voltages are regulated by means of pulse

  13. PREDICTING VOLTAGE DROOPS USING RECURRING PROGRAM

    E-Print Network [OSTI]

    Brooks, David

    ($200 mV for a nominal volt- age of 1.1 V).1 Such conservative operating voltage margins guarantee VOLTAGE DROOPS USING RECURRING PROGRAM AND MICROARCHITECTURAL EVENT ACTIVITY .......................................................................................................................................................................................................................... SHRINKING FEATURE SIZE AND DIMINISHING SUPPLY VOLTAGE ARE MAKING CIRCUITS MORE SENSITIVE TO SUPPLY VOLTAGE

  14. Voltage, energy and power in electric circuits

    E-Print Network [OSTI]

    Haase, Markus

    Voltage, energy and power in electric circuits Science teaching unit #12;Disclaimer The Department-2008DVD-EN Voltage, energy and power in electric circuits #12;#12;© Crown copyright 2008 1The National Strategies | Secondary Voltage, energy and power in electric circuits 00094-2008DVD-EN Contents Voltage

  15. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    SciTech Connect (OSTI)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  16. Electro-optic voltage sensor head

    DOE Patents [OSTI]

    Crawford, T.M.; Davidson, J.R.; Woods, G.K.

    1999-08-17

    The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers. 6 figs.

  17. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  18. IEEE 342 Node Low Voltage Networked Test System

    SciTech Connect (OSTI)

    Schneider, Kevin P.; Phanivong, Phillippe K.; Lacroix, Jean-Sebastian

    2014-07-31

    The IEEE Distribution Test Feeders provide a benchmark for new algorithms to the distribution analyses community. The low voltage network test feeder represents a moderate size urban system that is unbalanced and highly networked. This is the first distribution test feeder developed by the IEEE that contains unbalanced networked components. The 342 node Low Voltage Networked Test System includes many elements that may be found in a networked system: multiple 13.2kV primary feeders, network protectors, a 120/208V grid network, and multiple 277/480V spot networks. This paper presents a brief review of the history of low voltage networks and how they evolved into the modern systems. This paper will then present a description of the 342 Node IEEE Low Voltage Network Test System and power flow results.

  19. Sensor Switch's Bright Manufacturing Future

    Broader source: Energy.gov [DOE]

    The switch helps with cost effective energy savings by turning off the lights when an occupancy sensor says the room is empty.

  20. Switched differential algebraic equations Stephan Trenn

    E-Print Network [OSTI]

    Trenn, Stephan

    Switched differential algebraic equations Stephan Trenn Abstract In this chapter an electrical circuit with switches is modeled as a switched differential algebraic equation (switched DAE), i.e. each is the input. The resulting time-variance follows from the action of the switches present in the circuit

  1. Control method for peak power delivery with limited DC-bus voltage

    DOE Patents [OSTI]

    Edwards, John; Xu, Longya; Bhargava, Brij B.

    2006-09-05

    A method for driving a neutral point-clamped multi-level voltage source inverter supplying a synchronous motor is provided. A DC current is received at a neutral point-clamped multi-level voltage source inverter. The inverter has first, second, and third output nodes. The inverter also has a plurality of switches. A desired speed of a synchronous motor connected to the inverter by the first second and third nodes is received by the inverter. The synchronous motor has a rotor and the speed of the motor is defined by the rotational rate of the rotor. A position of the rotor is sensed, current flowing to the motor out of at least two of the first, second, and third output nodes is sensed, and predetermined switches are automatically activated by the inverter responsive to the sensed rotor position, the sensed current, and the desired speed.

  2. Saving Megawatts with Voltage Optimization 

    E-Print Network [OSTI]

    Wilson, T.; Bell, D.

    2010-01-01

    In September 2008, PCS UtiliData commissioned an Industrial Voltage Optimization system at the Plum Creek Timber Medium Density Fiberboard facility in Columbia Falls, Montana. The system was based upon the AdaptiVolt(TM) Volt/VAR Optimization system...

  3. Current vs. Voltage Feedback Amplifiers

    E-Print Network [OSTI]

    Papavassiliou, Christos

    ?' In most applications, the differences between current feedback (CFB) and voltage feedback (VFB) are not apparent. Today's CFB and VFB amplifiers have comparable performance, but there are cer- tain unique Performance · Feedback Freedom Aside from the well-known attribute of CFB amplifiers, gain

  4. Time's Ontic Voltage Craig Callender

    E-Print Network [OSTI]

    Callender, Craig

    Time's Ontic Voltage Craig Callender Philosophy of time, as practiced throughout the last hundred venue for attacking questions about the nature of time--in sharp contrast to the primary venue slowly in philosophy of time.1 Since twentieth-century analytic philosophy as a whole often drew

  5. Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

    SciTech Connect (OSTI)

    Gao, S.; Chen, C.; Liu, H. Y.; Lin, Y. S.; Li, S. Z.; Lu, S. H.; Wang, G. Y.; Song, C.; Zeng, F., E-mail: zengfei@mail.tsinghua.edu.cn; Pan, F., E-mail: panf@mail.tsinghua.edu.cn [Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhai, Z. [Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2014-08-11

    The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ?10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000?s, and fast operation speed of <100?ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.

  6. A magnetic thermal switch for heat management at the nanoscale

    E-Print Network [OSTI]

    Riccardo Bosisio; Stefano Valentini; Francesco Mazza; Giuliano Benenti; Rosario Fazio; Vittorio Giovannetti; Fabio Taddei

    2015-05-15

    In a multi-terminal setup, when time-reversal symmetry is broken by a magnetic field, the heat flows can be managed by designing a device with programmable Boolean behavior. We show that such device can be used to implement operations like on/off switching, reversal, selected splitting and swap of the heat currents. For each feature, the switching from one working condition to the other is obtained by inverting the magnetic field. This offers interesting opportunities of conceiving a programmable setup, whose operation is controlled by an external parameter (the magnetic field) without need to alter voltage and thermal biases applied to the system. Our results, generic within the framework of linear response, are illustrated by means of a three-terminal electronic interferometer model.

  7. Designing an ultra low quiescent current buck switching regulator

    E-Print Network [OSTI]

    Gardner, John Underhill

    2008-01-01

    The new buck regulator proposed in this thesis was designed to operate with only a few micro-amps of supply current during no load output conditions, while maintaining low output voltage ripple. The regulator also has high ...

  8. mm-Wave Phase Shifters and Switches

    E-Print Network [OSTI]

    Adabi Firouzjaei, Ehsan

    2010-01-01

    a transformer-based shunt switch and its equivalent circuitTraditional shunt switches occupy a large footprint as a2.4 Transformer based switch design example in 90nm CMOS

  9. Did a Switch in Time Save Nine?

    E-Print Network [OSTI]

    Quinn, Kevin M.; Ho, Daniel E.

    2009-01-01

    Benjamin A. Kleinerman. 2002. “A Switch in Time Saves Nine:John W. 1969. “The Big Switch: Justice Roberts and theG. 2005. “When Did the ”Switch in Time” Actually Occur? :

  10. Robust adaptive control of switched systems

    E-Print Network [OSTI]

    El-Rifai, Khalid, 1979-

    2007-01-01

    In this thesis, robust adaptive controllers are developed for classes of switched nonlinear systems. Switched systems are those governed by differential equations, which undergo vector field switching due to sudden changes ...

  11. Switched-Mode Power Converter Programmable

    E-Print Network [OSTI]

    Switched-Mode Power Converter Programmable compensator Identification & design Vref DPWM vout digital controller design for switching power converters. Starting from an experimentally identified Digital Controller Design for Switching Converters Abstract--This paper presents an approach to automated

  12. Battery switch for downhole tools

    DOE Patents [OSTI]

    Boling, Brian E. (Sugar Land, TX)

    2010-02-23

    An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

  13. Spin switches for compact implementation of neuron and synapse

    SciTech Connect (OSTI)

    Quang Diep, Vinh, E-mail: vdiep@purdue.edu; Sutton, Brian; Datta, Supriyo [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Behin-Aein, Behtash [GLOBALFOUNDRIES, Inc., Sunnyvale, California 94085 (United States)

    2014-06-02

    Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

  14. Prediction of Acoustic Noise in Switched Reluctance Motor Drives

    SciTech Connect (OSTI)

    Lin, CJ; Fahimi, B

    2014-03-01

    Prediction of acoustic noise distribution generated by electric machines has become an integral part of design and control in noise sensitive applications. This paper presents a fast and precise acoustic noise imaging technique for switched reluctance machines (SRMs). This method is based on distribution of radial vibration in the stator frame of the SRM. Radial vibration of the stator frame, at a network of probing points, is computed using input phase current and phase voltage waveforms. Sequentially, the acceleration of the probing network will be expanded to predict full acceleration on the stator frame surface, using which acoustic noise emission caused by the stator can be calculated using the boundary element method.

  15. Microwave pulse compression from a storage cavity with laser-induced switching

    DOE Patents [OSTI]

    Bolton, Paul R. (Menlo Park, CA)

    1992-01-01

    A laser-induced switch and a multiple cavity configuration are disclosed for producing high power microwave pulses. The microwave pulses are well controlled in wavelength and timing, with a quick rise time and a variable shape and power of the pulse. In addition, a method of reducing pre-pulse leakage to a low level is disclosed. Microwave energy is directed coherently to one or more cavities that stores the energy in a single mode, represented as a standing wave pattern. In order to switch the stored microwave energy out of the main cavity and into the branch waveguide, a laser-actuated switch is provided for the cavity. The switch includes a laser, associated optics for delivering the beam into the main cavity, and a switching gas positioned at an antinode in the main cavity. When actuated, the switching gas ionizes, creating a plasma, which becomes reflective to the microwave energy, changing the resonance of the cavity, and as a result the stored microwave energy is abruptly switched out of the cavity. The laser may directly pre-ionize the switching gas, or it may pump an impurity in the switching gas to an energy level which switches when a pre-selected cavity field is attained. Timing of switching the cavities is controlled by varying the pathlength of the actuating laser beam. For example, the pathlengths may be adjusted to output a single pulse of high power, or a series of quick lower power pulses.

  16. "Smart" watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, James W. (353 Church Rd., Beech Island, SC 29842)

    1991-01-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals.

  17. ''Smart'' watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, J.W.

    1991-10-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals. 21 figures.

  18. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton on Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY)

    2010-02-23

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  19. Dielectric liquid pulsed-power switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Faidas, Homer (Knoxville, TN)

    1990-01-01

    This disclosure identifies dielectric liquids for use as opening and closing switching media in pulsed power technology, and describes a dielectric-liquid-pulsed-power switch empolying flashlamps.

  20. Alarm toe switch. [Patent application

    DOE Patents [OSTI]

    Ganyard, F.P.

    1980-11-18

    An alarm toe switch inserted within a shoe for energizing an alarm circuit in a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch.