Sample records for high voltage switches

  1. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, T.E.

    1994-07-26T23:59:59.000Z

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  2. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1994-01-01T23:59:59.000Z

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  3. Compact high voltage solid state switch

    DOE Patents [OSTI]

    Glidden, Steven C.

    2003-09-23T23:59:59.000Z

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  4. Optically triggered high voltage switch network and method for switching a high voltage

    DOE Patents [OSTI]

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19T23:59:59.000Z

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  5. High voltage switch triggered by a laser-photocathode subsystem

    DOE Patents [OSTI]

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08T23:59:59.000Z

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  6. High-speed, sub-pull-in voltage MEMS switching.

    SciTech Connect (OSTI)

    Spahn, Olga Blum; Brewer, Steven; Olsson, Roy H.; Bogart, Gregory R.; Luck, David L.; Watts, Michael R.; Shaw, Michael J.; Nielson, Gregory N.; Resnick, Paul James; Tigges, Christopher P.; Grossetete, Grant David

    2008-01-01T23:59:59.000Z

    We have proposed and demonstrated MEMS switching devices that take advantage of the dynamic behavior of the MEMS devices to provide lower voltage actuation and higher switching speeds. We have explored the theory behind these switching techniques and have demonstrated these techniques in a range of devices including MEMS micromirror devices and in-plane parallel plate MEMS switches. In both devices we have demonstrated switching speeds under one microsecond which has essentially been a firm limit in MEMS switching. We also developed low-loss silicon waveguide technology and the ability to incorporate high-permittivity dielectric materials with MEMS. The successful development of these technologies have generated a number of new projects and have increased both the MEMS switching and optics capabilities of Sandia National Laboratories.

  7. Optically initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders; David M. (Livermore, CA)

    2011-02-22T23:59:59.000Z

    An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  8. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1996-10-15T23:59:59.000Z

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  9. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

    1996-01-01T23:59:59.000Z

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  10. High voltage photo switch package module

    DOE Patents [OSTI]

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18T23:59:59.000Z

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  11. Low-profile high-voltage compact gas switch

    SciTech Connect (OSTI)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-06-30T23:59:59.000Z

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the switch continued to operate satisfactorily with no apparent tracking or deterioration of the insulator.

  12. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

    1997-01-01T23:59:59.000Z

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  13. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1997-03-11T23:59:59.000Z

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  14. 130kV 130A High Voltage Switching Mode Power Supply for Neutral Injections – Control Issues and Algorithms

    E-Print Network [OSTI]

    130kV 130A High Voltage Switching Mode Power Supply for Neutral Injections – Control Issues and Algorithms

  15. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOE Patents [OSTI]

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04T23:59:59.000Z

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  16. Optically-initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders, David M. (Livermore, CA)

    2012-02-28T23:59:59.000Z

    An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  17. STRUCTURAL HEALTH MONITORING OF HIGH VOLTAGE ELECTRICAL SWITCH CERAMIC INSULATORS IN SEISMIC AREAS

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    STRUCTURAL HEALTH MONITORING OF HIGH VOLTAGE ELECTRICAL SWITCH CERAMIC INSULATORS IN SEISMIC AREAS damage. 7th European Workshop on Structural Health Monitoring July 8-11, 2014. La Cité, Nantes, France European Workshop on Structural Health Monitoring (2014)" #12;(a) (b) Figure 1 : a) Elect

  18. Droop Compensation with soft Switching for High Voltage Converter Modulator (HVCM)

    SciTech Connect (OSTI)

    Bland, Michael [University of Nottingham; Scheinker, Alexander [Los Alamos National Laboratory; Clare, Jon [University of Nottingham; Watson, Alan [University of Nottingham; Ji, Chao [University of Nottingham; Reass, William [Los Alamos National Laboratory

    2012-06-04T23:59:59.000Z

    High Voltage Converter Modulators (HVCM) offer significant performance advantages over conventional modulator technologies for long pulse applications. One of the key advantages of HVCM technology is the ability to compensate for capacitor bank voltage droop. Achieving droop compensation without incurring significant additional switching loss has not been possible in existing designs. This paper presents an analysis of the 'Y-point' variant of the HVCM topology using the Combined Phase and Frequency Modulation (CPFM) technique. This, combined with the addition of a 'lossless' snubber circuit, enables droop compensation while achieving soft switching over the entire pulse duration. The rise time and overshoot of the output voltage pulse is optimized using an iterative extreme seeking algorithm. The optimization reduces the rise time from 100 {micro}s to 50 {micro}s with no overshoot. This will lead to an increase in overall accelerator efficiency.

  19. A Fusing Switch for Fault Suppression in the SNS High Voltage Converter Modulators

    SciTech Connect (OSTI)

    Kemp, Mark A.; Burkhart, Craig; Nguyen, Minh N.; /SLAC; Anderson, David E.; /Oak Ridge

    2009-08-03T23:59:59.000Z

    The High Voltage Converter Modulators (HVCMs) at the Spallation Neutron Source (SNS) have operated in excess of a combined 250,000 hours. Performance and reliability improvements to the HVCM are ongoing to increase modulator availability as accelerator system demands increase. There is a relatively large amount of energy storage in the HVCMs, {approx}180 kJ. This energy has the potential to dump into unsuppressed faults, cause damage, and increase the time to repair. The 'fusing switch' concept involves isolation of this stored energy from the location of the most common faults. This paper introduces this concept and its application to the HVCMs.

  20. Redesign of the H-Bridge Switch Plate of the SNS High Voltage Converter Modulator

    SciTech Connect (OSTI)

    Kemp, M.A.; Burkhart, C.; Nguyen, M.N.; /SLAC; Anderson, D.E.; /Oak Ridge

    2009-05-07T23:59:59.000Z

    The 1-MW High Voltage Converter Modulators [1] have operated in excess of 250,000 hours at the Spallation Neutron Source. Increased demands on the accelerator performance require increased modulator reliability. An effort is underway at SLAC National Accelerator Laboratory to redesign the modulator H-bridge switch plate with the goals of increasing reliability and performance [2]. The major difference between the SLAC design and the existing design is the use of press-pack IGBTs. Compared to other packaging options, these IGBTs have been shown to have increased performance in pulsed-power applications, have increased cooling capability, and do not fragment and disassemble during a fault event. An overview of the SLAC switch plate redesign is presented. Design steps including electrical modeling of the modulator and H-bridge, development of an integrated IGBT clamping mechanism, and fault tests are discussed. Experimental results will be presented comparing electrical performance of the SLAC switch plate to the existing switchplate under normal and fault conditions.

  1. High PRF high current switch

    DOE Patents [OSTI]

    Moran, Stuart L. (Fredericksburg, VA); Hutcherson, R. Kenneth (College Park, MD)

    1990-03-27T23:59:59.000Z

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  2. High voltage pulse conditioning

    DOE Patents [OSTI]

    Springfield, Ray M. (Sante Fe, NM); Wheat, Jr., Robert M. (Los Alamos, NM)

    1990-01-01T23:59:59.000Z

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  3. AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications

    E-Print Network [OSTI]

    Seo, Kwang Seok

    AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching 16, 2004; accepted May 10, 2005; published September 8, 2005) We have proposed and fabricated an AlGaN/GaN: GaN, AlGaN, HEMT, switch 1. Introduction GaN has attracted attention for high-power and high

  4. Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application

    SciTech Connect (OSTI)

    Zhang, Hong-bo, E-mail: walkman67@163.com; Liu, Jin-liang [College of Opto-electronic Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)] [College of Opto-electronic Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

    2014-04-15T23:59:59.000Z

    In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid inner surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.

  5. Minimizing Simultaneous Switching Noise at Reduced Power with Constant-Voltage Power Transmission Lines for High-Speed Signaling

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    plane structure with a power transmission line (PTL). In this paper, a new power delivery scheme called Constant Voltage Power Transmission Line (CV-PTL) is shown to significantly reduce switching noise while, and measurements. Keywords Power delivery network, simultaneous switching noise, power transmission line 1

  6. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

    DOE Patents [OSTI]

    Sullivan, James S.; Hawkins, Steven A.

    2012-09-04T23:59:59.000Z

    An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

  7. Low power, scalable multichannel high voltage controller

    DOE Patents [OSTI]

    Stamps, James Frederick (Livermore, CA); Crocker, Robert Ward (Fremont, CA); Yee, Daniel Dadwa (Dublin, CA); Dils, David Wright (Fort Worth, TX)

    2008-03-25T23:59:59.000Z

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  8. Low power, scalable multichannel high voltage controller

    DOE Patents [OSTI]

    Stamps, James Frederick (Livermore, CA); Crocker, Robert Ward (Fremont, CA); Yee, Daniel Dadwa (Dublin, CA); Dils, David Wright (Fort Worth, TX)

    2006-03-14T23:59:59.000Z

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  9. High Voltage Safety Act

    Broader source: Energy.gov [DOE]

    The purpose of the High Voltage Safety Act is to prevent injury to persons and property and interruptions of utility service resulting from accidental or inadvertent contact with high-voltage...

  10. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    DOE Patents [OSTI]

    Caporaso, G.J.; Sampayan, S.E.; Kirbie, H.C.

    1998-10-13T23:59:59.000Z

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 12 figs.

  11. ABBGroup-1-High voltage lab

    E-Print Network [OSTI]

    Basse, Nils Plesner

    oscillations are due to travelling waves in the heating volume. #12;©ABBGroup-9- 3-Sep-07 2. High voltage phase interrupts the injected current, it is stressed by the transient recovery voltage (TRV) oscillating©ABBGroup-1- 3-Sep-07 High voltage lab Research on high voltage gas circuit breakers Nils P. Basse

  12. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, Thomas F. (Batavia, IL)

    1989-01-01T23:59:59.000Z

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  13. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, T.F.

    1989-12-19T23:59:59.000Z

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  14. Temperature controlled high voltage regulator

    DOE Patents [OSTI]

    Chiaro, Jr., Peter J. (Clinton, TN); Schulze, Gerald K. (Knoxville, TN)

    2004-04-20T23:59:59.000Z

    A temperature controlled high voltage regulator for automatically adjusting the high voltage applied to a radiation detector is described. The regulator is a solid state device that is independent of the attached radiation detector, enabling the regulator to be used by various models of radiation detectors, such as gas flow proportional radiation detectors.

  15. Ultra-compact Marx-type high-voltage generator

    DOE Patents [OSTI]

    Goerz, David A. (Brentwood, CA); Wilson, Michael J. (Modesto, CA)

    2000-01-01T23:59:59.000Z

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  16. Electronic high voltage generator with a high temperature superconducting coil

    SciTech Connect (OSTI)

    Jin, J.X.; Liu, H.K.; Dou, S.X. [Univ. of Wollongong (Australia)] [and others

    1996-12-31T23:59:59.000Z

    A novel method for generating high voltages from a low voltage DC source, by using a capacitor and inductor in a R, L, C resonant circuit has been developed with the consideration of using a high temperature superconducting (HTS) coil. To generate high voltages the polarity of a low voltage battery source is reversed each half resonant cycle, the control being achieved by an electronic switch. Resistance in the circuit limits the voltages that can be built up. By replacing a copper winding inductor with another inductor which has a HTS winding, the magnitude of achievable voltages is substantially increased. A (Bi,Pb){sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub 10+x} multifilament HTS wire is considered in this work to make the superconducting inductor. The high voltages generated are not capable of supplying low impedance loads, however, possible applications of the generator include electrical partial discharge testing and insulation resistance testing. It could also be used as a testing method for the HTS itself with respect to the critical current and AC loss measurement.

  17. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    SciTech Connect (OSTI)

    Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

    2014-08-18T23:59:59.000Z

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3?V is observed up to 200?nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  18. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, R.J.

    1996-10-22T23:59:59.000Z

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

  19. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, Rodney J. (Los Alamos, NM)

    1996-01-01T23:59:59.000Z

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

  20. High Voltage DC Transmission 2 1.0 Introduction

    E-Print Network [OSTI]

    McCalley, James D.

    1 High Voltage DC Transmission 2 1.0 Introduction Interconnecting HVDC within an AC system requires on use of switching devices collectively referred to in the HVDC community as valves. Valves may be non. Fig. 1 There have been three types of devices for implementing HVDC converter circuits: mercury

  1. High voltage photovoltaic power converter

    DOE Patents [OSTI]

    Haigh, Ronald E. (Arvada, CO); Wojtczuk, Steve (Cambridge, MA); Jacobson, Gerard F. (Livermore, CA); Hagans, Karla G. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

  2. High voltage electrical amplifier having a short rise time

    DOE Patents [OSTI]

    Christie, David J. (Pleasanton, CA); Dallum, Gregory E. (Livermore, CA)

    1991-01-01T23:59:59.000Z

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  3. Hybrid switch for resonant power converters

    DOE Patents [OSTI]

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09T23:59:59.000Z

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  4. ABBGroup-1-High voltage lab

    E-Print Network [OSTI]

    Basse, Nils Plesner

    . GENERATION System voltage: 12-24 kV Rated current: 6000-24000 A Max. short-circuit current: 50-500 kA TRANSMISSION System voltage: 72-800 kV Rated current: 2500-4000 A Max. short-circuit current: 25-63 k. It is designed to protect an electrical circuit from damage caused by overload or short-circuit. A circuit

  5. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1995-05-23T23:59:59.000Z

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  6. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

    1995-01-01T23:59:59.000Z

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  7. High-voltage crowbar protection for the large CDF axial drift chamber

    SciTech Connect (OSTI)

    Binkley, M.; Mukherjee, A.; Stuermer, W.; Wagner, R.L.; /Fermilab

    2004-01-01T23:59:59.000Z

    The Central Outer Tracker (COT) is a big cylindrical drift chamber that provides charged particle tracking for the Collider Detector at Fermilab experiment. To protect the COT, the large stored energy in the high voltage system needs to be removed quickly when a problem is sensed. For the high voltage switch, a special-order silicon-controlled-rectifier was chosen over more readily available integrated gate bipolar transistors because of layout and reliability questions. The considerations concerning the high voltage switch, the prototype performance, and the experience of more than two years of running are described.

  8. Advanced Gate Drive for the SNS High Voltage Converter Modulator

    SciTech Connect (OSTI)

    Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

    2009-05-07T23:59:59.000Z

    SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

  9. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High-Voltage Solid Polymer Batteries for Electric Drive Vehicles High-Voltage Solid Polymer Batteries for Electric Drive Vehicles 2012 DOE Hydrogen and Fuel Cells Program and...

  10. Electro-optic high voltage sensor

    DOE Patents [OSTI]

    Davidson, James R.; Seifert, Gary D.

    2003-09-16T23:59:59.000Z

    A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

  11. Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

    DOE Patents [OSTI]

    Ierna, W.F.

    1986-03-11T23:59:59.000Z

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  12. Cermet insert high voltage holdoff for ceramic/metal vacuum devices

    DOE Patents [OSTI]

    Ierna, William F. (Seminole, FL)

    1987-01-01T23:59:59.000Z

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  13. Design and analysis of a zero-voltage switching scheme for a dc- to-dc converter

    E-Print Network [OSTI]

    Arun, G.

    1992-01-01T23:59:59.000Z

    5S 59 VITA . 65 I. IST OF FICI;RES FIGURE Page Linear versus switch-mode power convers&on Components of a switch-mode dc-to-dc converter 3 A typical dc-to-dc converter system Basic buck converter Basic boost converter Basic buck...-boost converter 7 One leg of a, dc-to-dc converter. Turn-on and turn-off scenartos in switch-mode operation. 16 10 Switching loci in the ur ? ir plane. Circuit for. zero-voltage sw&tching. . Mode 1 17 90 Mode? Mode I Mode 5 oo 93 Typical voltage...

  14. Modular high voltage power supply for chemical analysis

    DOE Patents [OSTI]

    Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

    2010-05-04T23:59:59.000Z

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  15. Modular high voltage power supply for chemical analysis

    SciTech Connect (OSTI)

    Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

    2007-01-09T23:59:59.000Z

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  16. Modular high voltage power supply for chemical analysis

    SciTech Connect (OSTI)

    Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

    2008-07-15T23:59:59.000Z

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  17. Modeling Combustion Control for High Power Diesel Mode Switching...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Combustion Control for High Power Diesel Mode Switching Modeling Combustion Control for High Power Diesel Mode Switching Poster presentation given at the 16th Directions in...

  18. Chapter 17. High-Voltage Systems and Dielectric Materials High-Voltage Systems and Dielectric Materials

    E-Print Network [OSTI]

    -Voltage Systems and Dielectric Materials 17-2 RLE Progress Report 152 provides very useful insight into pre-breakdown in high voltage conduction and breakdown phenomena. 1. Mechanisms Behind Positive Streamers and Their Distinct Propagation Modes in Transformer Oil Sponsors This work was supported by ABB Corporate Research

  19. High Voltage Electrolyte for Lithium Batteries

    Broader source: Energy.gov (indexed) [DOE]

    Argonne's Fluorinated Compounds as High Voltage Electrolytes (HVEs) O O O O O O EC EMC O O O CF CF 3 CF 3 O O O CF 3 F 2 HC C F 2 O F 2 C CF 2 H 6 Code Name Chemical...

  20. A simple high-voltage high current spark gap with subnanosecond jitter triggered by femtosecond laser filamentation

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 A simple high-voltage high current spark gap with subnanosecond jitter triggered by femtosecond and able to switch currents in excess of 10 kA with sub-nanosecond jitter. The spark gap is remotely with a nanosecond jitter time2-7 . The jitter could be reduced to hundred of picoseconds with a SF6 filled cell8

  1. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp Petar Ljusev, Michael A.E. Andersen

    E-Print Network [OSTI]

    Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp Petar discusses the advantages and problems when implementing direct energy conversion switching-mode audio power on a direct-conversion switching-mode audio power ampli- fier with active capacitive voltage clamp

  2. Electro-optic high voltage sensor

    DOE Patents [OSTI]

    Davidson, James R. (Idaho Falls, ID); Seifert, Gary D. (Idaho Falls, ID)

    2002-01-01T23:59:59.000Z

    A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

  3. High-current, fast-switching transistor development

    SciTech Connect (OSTI)

    Hower, P.L.

    1981-03-15T23:59:59.000Z

    Work that shows how the results obtained under a previous contract (NAS3-18916) have been applied to a larger-diameter (33-mm) transistor are described. An improved base contact for equalizing the base-emitter voltage at high currents has been developed along with an improved emitter contact preform which increases the silicon area available for current conduction. The electrical performance achieved is consistent with the proposed optimum design. The device design, wafer-processing techniques, and various measurements which include forward SOA, dc characteristics, and switching times are described.

  4. A SCR SWITCHED CAPACITOR VOLTAGE REGULATOR FOR 150 kV NEUTRAL BEAM POWER SUPPLY

    E-Print Network [OSTI]

    Milnes, K.A.

    2011-01-01T23:59:59.000Z

    et a1. , "150-kV, 80-A Solid State Power Supply for Neutral100% solid state and provides 1% regulation at power levelssolid state high voltage re- gulator. The block diagram of the power

  5. Structural Optimization of High Voltage Transmission Line Towers considering

    E-Print Network [OSTI]

    Colominas, Ignasi

    Structural Optimization of High Voltage Transmission Line Towers considering Continuum and Discrete/or to common designs largely repeated (e.g. automotive compo- nents), and high voltage transmission towers can than conventional designs of high voltage transmission line towers. The optimization model proposed

  6. Production of high voltage by ion bombardment

    E-Print Network [OSTI]

    Phinney, Lucas Carter

    2003-01-01T23:59:59.000Z

    . . . 35 FIGIJRE Page 19 I-V curve for the ammeter setup . . 35 20 Diagram of the leakage current test setup . . . . . . 37 21 Voltmeter readings at each high voltage interval . . . . . , 38 CHAPTER I INTRODUCTION Direct energy conversion... streaming into the source There is also a moveable shutter that can stop the beam &om entering the beam line. A Varian VHS-6 diffusion pump is connected at the bottom of the glass cross. Its function is to maintain a vacuum in this part of the accelerator...

  7. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect (OSTI)

    None

    2010-09-01T23:59:59.000Z

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  8. Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices

    SciTech Connect (OSTI)

    Seo, Juhee [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of); Ahn, Hyung-Woo [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Material Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Shin, Sang-yeol [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Korea Aerospace University, Goyang 412-791 (Korea, Republic of); Cheong, Byung-ki; Lee, Suyoun, E-mail: slee-eels@kist.re.kr [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

    2014-04-14T23:59:59.000Z

    Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.

  9. A Charge Pump that Generates Negative High Voltage with Variable Voltage , Eugene Ivanova,

    E-Print Network [OSTI]

    Ayers, Joseph

    A Charge Pump that Generates Negative High Voltage with Variable Voltage Gain Jun Zhaob, , Eugene, Massachusetts 02115, U.S.A. Abstract A cross-coupled structure based charge pump that generates negative high. The proposed negative charge pump is designed to deliver 40 uA with a wide supply range from 2.5V to 5.5V using

  10. Distributed Voltage and Current Control of Multi-Terminal High-Voltage Direct

    E-Print Network [OSTI]

    Dimarogonas, Dimos

    }@kth.se.) Abstract: High-voltage direct current (HVDC) is a commonly used technology for long-distance power for multi-terminal HVDC (MTDC) systems is proposed. Under certain conditions on the controller gains factor behind long-distance power transmission. High-voltage direct current (HVDC) is a commonly used

  11. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, Robert L. (Union City, CA); Kirbie, Hugh C. (Dublin, CA); Newton, Mark A. (Livermore, CA)

    1998-01-01T23:59:59.000Z

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

  12. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, R.L.; Kirbie, H.C.; Newton, M.A.

    1998-06-30T23:59:59.000Z

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

  13. Nanoscale Morphological and Chemical Changes of High Voltage...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanoscale Morphological and Chemical Changes of High Voltage Lithium-Manganese Rich NMC Composite Cathodes with Cycling Friday, August 29, 2014 Renewable energy is critical for the...

  14. Lookout device for high voltage circuit breaker

    SciTech Connect (OSTI)

    Kozlowski, L.J.; Shirey, L.A.

    1991-12-31T23:59:59.000Z

    An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the respective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

  15. Lockout device for high voltage circuit breaker

    DOE Patents [OSTI]

    Kozlowski, L.J.; Shirey, L.A.

    1993-01-26T23:59:59.000Z

    An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the respective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

  16. Lockout device for high voltage circuit breaker

    SciTech Connect (OSTI)

    Kozlowski, Lawrence J. (New Kensington, PA); Shirey, Lawrence A. (North Huntingdon, PA)

    1993-01-01T23:59:59.000Z

    An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the repsective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

  17. Remote switch actuator

    DOE Patents [OSTI]

    Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

    2013-01-29T23:59:59.000Z

    The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

  18. Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion. Final report, April 1, 1993--February 28, 1994

    SciTech Connect (OSTI)

    Murray, C.S.; El-Genk, M.S.

    1994-02-01T23:59:59.000Z

    A low voltage/high current switch refer-red as ``Cs-Ba tacitron`` is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM{sup 2}, switch power density of 1 kW/cm{sup 2}, and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V.

  19. An Ultra-Compact Marx-Type High-Voltage Generator

    SciTech Connect (OSTI)

    Goerz, D; Ferriera, T; Nelson, D; Speer, R; Wilson, M

    2001-06-15T23:59:59.000Z

    This paper discusses the design of an ultra-compact, Marx-type, high-voltage generator. This system incorporates high-performance components that are closely coupled and integrated into an extremely compact assembly. Low profile, custom ceramic capacitors with coplanar extended electrodes provide primary energy storage. Low-inductance, spark-gap switches incorporate miniature gas cavities imbedded within the central region of the annular shaped capacitors, with very thin dielectric sections separating the energy storage capacitors. Carefully shaped electrodes and insulator surfaces are used throughout to minimize field enhancements, reduce fields at triple-point regions, and enable operation at stress levels closer to the intrinsic breakdown limits of the dielectric materials. Specially shaped resistors and inductors are used for charging and isolation during operation. Forward-coupling ceramic capacitors are connected across successive switch-capacitor-switch stages to assist in switching. Pressurized SF, gas is used for electrical insulation in the spark-gap switches and throughout the unit. The pressure housing is constructed entirely of dielectric materials, with segments that interlock with the low-profile switch bodies to provide an integrated support structure for all of the components. This ultra-compact Marx generator employs a modular design that can be sized as needed for a particular application. Units have been assembled with 4, 10, and 30 stages and operated at levels up to 100 kV per stage.

  20. Measurement of high voltage using Rutherford backscattering spectrometry

    E-Print Network [OSTI]

    Abrego, Celestino Pete

    2007-04-25T23:59:59.000Z

    A novel variation of Rutherford Backscattering Spectrometry (RBS) has been utilized to measure a high voltage collected on an aluminum target by Direct Energy Conversion. The maximum high voltage on the target was measured to be 97.5 kV +/- 2 k...

  1. Design and analysis of a zero-voltage switching scheme for a dc- to-dc converter 

    E-Print Network [OSTI]

    Arun, G.

    1992-01-01T23:59:59.000Z

    DESIGN AND ANALYSIS OF A ZERO-VOLTAGE SSVITCHING SCFIE'. tIE FOR A DC-TO-DC CONVERTER A Thesis by G. ARUN Submitted to the Office of Graduate Studies of Texas ARM 1. niversity in partial fulfillment of the requirements for the degree... of MASTER OF SCIENCE December 1992 Major Subject: Electrical Engineering DESIGN AND ANALYSIS OE A ZERO-VOLTAGE SWITCHING SCHEME I'OR A DC-TO-DC CONVERTER A Thesis by G. AR(tN Approved as to style and content by: P. Enjeti (Chair of Cornrnitteel C...

  2. Planar LTCC transformers for high voltage flyback converters.

    SciTech Connect (OSTI)

    Schofield, Daryl (NASCENT Technology Inc. , Watertown, SD); Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George (NASCENT Technology Inc. , Watertown, SD); Abel, Dave (NASCENT Technology Inc. , Watertown, SD)

    2007-06-01T23:59:59.000Z

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  3. High-voltage air-core pulse transformers

    SciTech Connect (OSTI)

    Rohwein, G. J.

    1981-01-01T23:59:59.000Z

    General types of air core pulse transformers designed for high voltage pulse generation and energy transfer applications are discussed with special emphasis on pulse charging systems which operate up to the multi-megavolt range. The design, operation, dielectric materials, and performance are described. It is concluded that high voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The principal disadvantage of high voltage air core transformers is that they are not generally available from commercial sources. Consequently, the potential user must become thoroughly familiar with all aspects of design, fabrication and system application before he can produce a high performance transformer system. (LCL)

  4. Modeling Combustion Control for High Power Diesel Mode Switching

    Broader source: Energy.gov (indexed) [DOE]

    Directions in Engine-Efficiency and Emissions Research Conference 2010 Modeling Combustion Control for High Power Diesel Mode Switching Siddhartha Banerjee, Christopher J. Rutland...

  5. Electrical system architecture having high voltage bus

    DOE Patents [OSTI]

    Hoff, Brian Douglas (East Peoria, IL); Akasam, Sivaprasad (Peoria, IL)

    2011-03-22T23:59:59.000Z

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  6. High Voltage Electrolyte for Lithium Batteries

    Broader source: Energy.gov (indexed) [DOE]

    5.0E-04 1.0E-03 2 2.2 2.4 2.6 2.8 Voltage (V) dQdV (AhV) 1 st Charge 1.2M LiPF 6 ECEMC 37 1 st Charge 1.0M LiPF 6 TMS1NM3 55 with 2% and 4% VC 1 st Charge 1.0M LiPF 6 TMS...

  7. High-index-contrast electromechanical optical switches

    E-Print Network [OSTI]

    Bryant, Reginald (Reginald Eugene), 1978-

    2011-01-01T23:59:59.000Z

    System developers are looking to replace protocol-dependent, bandwidth-limited optical networks with intelligent optically-transparent integrated photonic networks. Several electromechanical optical switches are explored ...

  8. Unravelling the Performance Degradation Mechanisms in High-voltage...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unravelling the Performance Degradation Mechanisms in High-voltage Lithium-ion Battery Composite Oxide Electrodes Apr 11 2014 02:00 PM - 03:00 PM Debasish Mohanty, ORNL, Oak Ridge...

  9. Low voltage amplifier architecture for high speed switched capacitor circuits

    E-Print Network [OSTI]

    Shankar, Asit

    2001-01-01T23:59:59.000Z

    are studied in detail. It is shown how CMFF can improve the performance of pseudo-differential OTA's. An OTA based on the proposed architecture is designed in a 0.5 []m CMOS process available from MOSIS. Simulation results of the amplifier are presented. A...

  10. Perfect electrical switching of edge channel transport in HgTe quantum wells controlled by gate voltage

    SciTech Connect (OSTI)

    Fu, Hua-Hua, E-mail: hhfu@mail.hust.edu.cn; Wu, Dan-Dan; Gu, Lei [College of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-08-14T23:59:59.000Z

    We present a proposal to realize a perfect electrical switching of topological edge-state transport in a HgTe quantum well (QW). In our device design, we place a strip-like top gate voltage in a conventional quantum-point-contact (QPC) region in the HgTe QW. The numerical calculations show that upon increasing the gate voltage, two new conductance channels are developed in the transport direction and just neighbouring the boundaries of the top gate. The quantum states in the new channels can couple with the edge states to open a gap in energy spectrum, and in turn the gap width can be adjusted by the gate voltage, indicating that switch-on/off of the edge channels can be manipulated in a controllable way. Our device can not only be considered as a development of the conventional QPC structure based on the HgTe QW but also provides a new route to realize topological electrical switchers.

  11. The design, construction, and operation of long-distance high-voltage electricity transmission technologies.

    SciTech Connect (OSTI)

    Molburg, J. C.; Kavicky, J. A.; Picel, K. C.

    2008-03-03T23:59:59.000Z

    This report focuses on transmission lines, which operate at voltages of 115 kV and higher. Currently, the highest voltage lines comprising the North American power grid are at 765 kV. The grid is the network of transmission lines that interconnect most large power plants on the North American continent. One transmission line at this high voltage was built near Chicago as part of the interconnection for three large nuclear power plants southwest of the city. Lines at this voltage also serve markets in New York and New England, also very high demand regions. The large power transfers along the West Coast are generally at 230 or 500 kV. Just as there are practical limits to centralization of power production, there are practical limits to increasing line voltage. As voltage increases, the height of the supporting towers, the size of the insulators, the distance between conductors on a tower, and even the width of the right-of-way (ROW) required increase. These design features safely isolate the electric power, which has an increasing tendency to arc to ground as the voltage (or electrical potential) increases. In addition, very high voltages (345 kV and above) are subject to corona losses. These losses are a result of ionization of the atmosphere, and can amount to several megawatts of wasted power. Furthermore, they are a local nuisance to radio transmission and can produce a noticeable hum. Centralized power production has advantages of economies of scale and special resource availability (for instance, hydro resources), but centralized power requires long-distance transfers of power both to reach customers and to provide interconnections for reliability. Long distances are most economically served at high voltages, which require large-scale equipment and impose a substantial footprint on the corridors through which power passes. The most visible components of the transmission system are the conductors that provide paths for the power and the towers that keep these conductors at a safe distance from each other and from the ground and the natural and built environment. Common elements that are generally less visible (or at least more easily overlooked) include the maintained ROW along the path of the towers, access roads needed for maintenance, and staging areas used for initial construction that may be restored after construction is complete. Also visible but less common elements along the corridor may include switching stations or substations, where lines of similar or different voltages meet to transfer power.

  12. Planar LTCC transformers for high voltage flyback converters: Part II.

    SciTech Connect (OSTI)

    Schofield, Daryl (NASCENTechnology, Inc., Watertown, SD); Schare, Joshua M., Ph.D.; Slama, George (NASCENTechnology, Inc., Watertown, SD); Abel, David (NASCENTechnology, Inc., Watertown, SD)

    2009-02-01T23:59:59.000Z

    This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

  13. Design & Fabrication of a High-Voltage Photovoltaic Cell

    SciTech Connect (OSTI)

    Felder, Jennifer; /North Carolina State U. /SLAC

    2012-09-05T23:59:59.000Z

    Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

  14. auxiliary voltage converter: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Voltage Switching inverter working at 20 kHz and an output stage (high frequency transformers, Schottky rectifi ers and output filter... Jrgensen, H E; Dupaquier, A;...

  15. A design for a high voltage magnet coil ringer test set

    SciTech Connect (OSTI)

    Koska, W. [Fermi National Accelerator Lab., Batavia, IL (United States); Sims, R.E. [Superconducting Super Collider Lab., Dallas, TX (United States)

    1992-04-01T23:59:59.000Z

    By discharging a bank of charged capacitors through a high power SCR switch into an SSC dipole magnet assembly, it is possible to ``ring`` the coil and develop a voltage stress of greater than 50 volts turn-to-turn, thereby verifying the insulation integrity. We will present an overview of the test set design for a 2 kV isolated SCR firing circuit, including safety features, selectable capacitor banks, and digital waveform storage system. Results from testing typical coils and magnets will be included. Possible upgrades are also discussed.

  16. A design for a high voltage magnet coil ringer test set

    SciTech Connect (OSTI)

    Koska, W. (Fermi National Accelerator Lab., Batavia, IL (United States)); Sims, R.E. (Superconducting Super Collider Lab., Dallas, TX (United States))

    1992-04-01T23:59:59.000Z

    By discharging a bank of charged capacitors through a high power SCR switch into an SSC dipole magnet assembly, it is possible to ring'' the coil and develop a voltage stress of greater than 50 volts turn-to-turn, thereby verifying the insulation integrity. We will present an overview of the test set design for a 2 kV isolated SCR firing circuit, including safety features, selectable capacitor banks, and digital waveform storage system. Results from testing typical coils and magnets will be included. Possible upgrades are also discussed.

  17. A high voltage pulsed power supply for capillary discharge waveguide applications

    SciTech Connect (OSTI)

    Abuazoum, S.; Wiggins, S. M.; Issac, R. C.; Welsh, G. H.; Vieux, G.; Jaroszynski, D. A. [Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Ganciu, M. [Low Temperature Plasma Department, National Institute of Lasers, Plasma and Radiation Physics, 077125, Magurele, Bucharest (Romania)

    2011-06-15T23:59:59.000Z

    We present an all solid-state, high voltage pulsed power supply for inducing stable plasma formation (density {approx}10{sup 18} cm{sup -3}) in gas-filled capillary discharge waveguides. The pulser (pulse duration of 1 {mu}s) is based on transistor switching and wound transmission line transformer technology. For a capillary of length 40 mm and diameter 265 {mu}m and gas backing pressure of 100 mbar, a fast voltage pulse risetime of 95 ns initiates breakdown at 13 kV along the capillary. A peak current of {approx}280 A indicates near complete ionization, and the r.m.s. temporal jitter in the current pulse is only 4 ns. Temporally stable plasma formation is crucial for deploying capillary waveguides as plasma channels in laser-plasma interaction experiments, such as the laser wakefield accelerator.

  18. High voltage stability performance of a gamma ray detection device

    SciTech Connect (OSTI)

    Abdullah, Nor Arymaswati; Lombigit, Lojius; Rahman, Nur Aira Abd [Technical Support Division, Malaysian Nuclear Agency, 43000 Kajang, Selangor (Malaysia)

    2014-02-12T23:59:59.000Z

    An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

  19. Gaseous insulators for high voltage electrical equipment

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); James, David R. (Knoxville, TN); Pace, Marshall O. (Knoxville, TN); Pai, Robert Y. (Concord, TN)

    1981-01-01T23:59:59.000Z

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  20. Radio-Frequency Interference (RFI) From Extra-High-Voltage (EHV) Transmission Lines

    E-Print Network [OSTI]

    Ellingson, Steven W.

    -current (HVAC) transmission lines; high-voltage direct-current (HVDC) transmission lines will be addressed

  1. FERROELECTRIC SWITCH FOR A HIGH-POWER Ka-BAND ACTIVE PULSE COMPRESSOR

    SciTech Connect (OSTI)

    Hirshfield, Jay L. [Omega-P, Inc.] [Omega-P, Inc.

    2013-12-18T23:59:59.000Z

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW ?s-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  2. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Cooper, Gregory A. (Pleasant Hill, CA)

    2002-01-01T23:59:59.000Z

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  3. Field Optimization of Three Dimensional High Voltage C. Trinitis

    E-Print Network [OSTI]

    Stamatakis, Alexandros

    Field Optimization of Three Dimensional High Voltage Equipment C. Trinitis Lehrstuhl f The goal of finding an optimal electric field strength distribution for arbitrary three di­ mensional­ cal optimization algorithm. The package ob­ tained from these three components is then able

  4. High Voltage DC Transmission 1.0 Introduction

    E-Print Network [OSTI]

    McCalley, James D.

    1 High Voltage DC Transmission 1.0 Introduction HVDC has been applied in electric power systems for many years now. Figure 1 illustrates worldwide many of the HVDC applications [1]. Fig. 1 ABB provides a webpage which summarizes HVDC projects by type and capacity or by commissioning year [2]. Wikipedia [3

  5. Dynamic Voltage and Frequency Scaling Control for Crossbars in Input-Queued Switches

    E-Print Network [OSTI]

    difficult to achieve. Reducing this thermal dissipation "bottleneck", or reducing the on-chip power the static power, due to leakage currents, since it tends to be proportional to the occupied area and can Abstract--The power consumption in chips, in general, and in crossbars switching fabrics, in particular

  6. High voltage-high power components for large space power distribution systems

    SciTech Connect (OSTI)

    Renz, D.D.

    1984-08-01T23:59:59.000Z

    For over a decade, Lewis Research Center has been developing space power components. These components include a family of bi-polar power switching transistors, fast switching power diodes, heat pipe cooled high-frequency transformers and inductors, high frequency conduction cooled transformers, high powerhigh frequency capacitors, remote power controllers and rotary power transfer devices. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components have been developed to the prototype level. Series resonant dc/dc converters have been built to the 25 kW level.

  7. Fiber optic current monitor for high-voltage applications

    DOE Patents [OSTI]

    Renda, G.F.

    1992-04-21T23:59:59.000Z

    A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time. 6 figs.

  8. Vehicle Technologies Office Merit Review 2015: High-Voltage, High-Capacity Polyanion Cathodes

    Broader source: Energy.gov [DOE]

    Presentation given by U of Texas at Austin at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high-voltage, high...

  9. Magnetic shielding of Hall thrusters at high discharge voltages

    SciTech Connect (OSTI)

    Mikellides, Ioannis G., E-mail: Ioannis.G.Mikellides@jpl.nasa.gov; Hofer, Richard R.; Katz, Ira; Goebel, Dan M. [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (United States)

    2014-08-07T23:59:59.000Z

    A series of numerical simulations and experiments have been performed to assess the effectiveness of magnetic shielding in a Hall thruster operating in the discharge voltage range of 300–700?V (I{sub sp}???2000–2700?s) at 6?kW, and 800?V (I{sub sp} ? 3000) at 9?kW. At 6?kW, the magnetic field topology with which highly effective magnetic shielding was previously demonstrated at 300?V has been retained for all other discharge voltages; only the magnitude of the field has been changed to achieve optimum thruster performance. It is found that magnetic shielding remains highly effective for all discharge voltages studied. This is because the channel is long enough to allow hot electrons near the channel exit to cool significantly upon reaching the anode. Thus, despite the rise of the maximum electron temperature in the channel with discharge voltage, the electrons along the grazing lines of force remain cold enough to eliminate or reduce significantly parallel gradients of the plasma potential near the walls. Computed maximum erosion rates in the range of 300–700?V are found not to exceed 10{sup ?2}?mm/kh. Such rates are ?3 orders of magnitude less than those observed in the unshielded version of the same thruster at 300?V. At 9?kW and 800?V, saturation of the magnetic circuit did not allow for precisely the same magnetic shielding topology as that employed during the 6-kW operation since this thruster was not designed to operate at this condition. Consequently, the maximum erosion rate at the inner wall is found to be ?1 order of magnitude higher (?10{sup ?1}?mm/kh) than that at 6?kW. At the outer wall, the ion energy is found to be below the sputtering yield threshold so no measurable erosion is expected.

  10. High Power, High Voltage FETs in Linear Applications: A User's Perspective

    SciTech Connect (OSTI)

    N. Greenough, E. Fredd, S. DePasquale

    2009-09-21T23:59:59.000Z

    The specifications of the current crop of highpower, high-voltage field-effect transistors (FETs) can lure a designer into employing them in high-voltage DC equipment. Devices with extremely low on-resistance and very high power ratings are available from several manufacturers. However, our experience shows that high-voltage, linear operation of these devices at near-continuous duty can present difficult reliability challenges at stress levels well-below their published specifications. This paper chronicles the design evolution of a 600 volt, 8 ampere shunt regulator for use with megawatt-class radio transmitters, and presents a final design that has met its reliability criteria.

  11. High power impulse magnetron sputtering: Current-voltage-time characteristics indicate the onset of sustained self-sputtering

    E-Print Network [OSTI]

    Anders, Andre; Andersson, Joakim; Ehiasarian, Arutiun

    2008-01-01T23:59:59.000Z

    target voltage starts to slightly droop for higher voltages,1000 V, the actual voltage droops and shows less stability.see a large voltage droop, especially at high current). We

  12. Distribution System Voltage Performance Analysis for High-Penetration Photovoltaics

    SciTech Connect (OSTI)

    Liu, E.; Bebic, J.

    2008-02-01T23:59:59.000Z

    This report examines the performance of commonly used distribution voltage regulation methods under reverse power flow.

  13. High voltage design structure for high temperature superconducting device

    DOE Patents [OSTI]

    Tekletsadik, Kasegn D. (Rexford, NY)

    2008-05-20T23:59:59.000Z

    In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.

  14. Experimental validation of a high voltage pulse measurement method.

    SciTech Connect (OSTI)

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01T23:59:59.000Z

    This report describes X-cut lithium niobate's (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps - 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensor's U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  15. High-Power Microwave Switch Employing Electron Beam Triggering

    SciTech Connect (OSTI)

    Jay L. Hirshfield

    2012-09-19T23:59:59.000Z

    A high-power active microwave pulse compressor is described that modulates the quality factor Q of the energy storage cavity by a new means involving mode conversion controlled by a triggered electron-beam discharge through a switch cavity. The electron beam is emitted from a diamond-coated molybdenum cathode. This report describes the principle of operation, the design of the switch, the configuration used for the test, and the experimental results. The pulse compressor produced output pulses with 140 - Ã?Â?165 MW peak power, power gain of 16 - 20, and pulse duration of 16 - 20 ns at a frequency of 11.43 GHz.

  16. Soft switched high frequency ac-link converter 

    E-Print Network [OSTI]

    Balakrishnan, Anand Kumar

    2009-05-15T23:59:59.000Z

    topology for medium and high power ac-ac, ac-dc and dc-ac applications. An ac-link formed by an inductor-capacitor pair replaces the conventional dc-link. Each leg of the converter is formed by two bidirectional switches. Power transfer from input to output...

  17. An earth-isolated optically coupled wideband high voltage probe powered by ambient light

    E-Print Network [OSTI]

    Bellan, Paul M.

    An earth-isolated optically coupled wideband high voltage probe powered by ambient light Xiang Zhai) An earth-isolated optically coupled wideband high voltage probe powered by ambient light Xiang Zhaia online 9 October 2012) An earth-isolated optically-coupled wideband high voltage probe has been developed

  18. Induction of nuclear fission by high-voltage application

    E-Print Network [OSTI]

    Hirokazu Maruyama

    2007-11-20T23:59:59.000Z

    In nuclear power generation, fissile materials are mainly used. For example, $U^{235}$ is fissile and therefore quite essential for use of nuclear energy. However, the material $U^{235}$ has very small natural abundance less than 1 %. We should seek possibility of utilizing fissionable materials such as $U^{238}$ because natural abundance of such fissionable materials is generally much larger than fissile ones. In this paper, we show that thermal neutrons with vanishing kinetic energy can induce nuclear fission when high voltage is applied to fissionable materials. To obtain this result, we use the liquid-drop model for nuclei. Finally, we propose how fissionable materials can be utilized.

  19. Worldwide reliability surveys of high voltage circuit breakers

    SciTech Connect (OSTI)

    Heising, C.R.

    1995-05-01T23:59:59.000Z

    This article reports on the results of two CIGRE 13.06 Working Group worldwide surveys of the reliability of high voltage circuit breakers, 63 kV and above. The first inquiry included 78,000 breaker-years of ``in service data`` from 102 utilities in 22 countries during the years 1974--1977 and included all interrupting technologies. The second inquiry included 70,708 breaker-years from 132 utilities in 22 countries for the years 1988--1991 and only included single-pressure SF6 breakers, because this is what most utilities are now buying. Thirty-one US utilities submitted data.

  20. Self-monitoring high voltage transmission line suspension insulator

    DOE Patents [OSTI]

    Stemler, Gary E. (Vancouver, WA); Scott, Donald N. (Vancouver, WA)

    1981-01-01T23:59:59.000Z

    A high voltage transmission line suspension insulator (18 or 22) which monitors its own dielectric integrity. A dielectric rod (10) has one larger diameter end fitting attachable to a transmission line and another larger diameter end fitting attachable to a support tower. The rod is enclosed in a dielectric tube (14) which is hermetically sealed to the rod's end fittings such that a liquidtight space (20) is formed between the rod and the tube. A pressurized dielectric liquid is placed within that space. A discoloring dye placed within this space is used to detect the loss of the pressurized liquid.

  1. An accurate continuous calibration system for high voltage current transformer

    SciTech Connect (OSTI)

    Tong Yue; Li Binhong [College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei Province (China)

    2011-02-15T23:59:59.000Z

    A continuous calibration system for high voltage current transformers is presented in this paper. The sensor of this system is based on a kind of electronic instrument current transformer, which is a clamp-shape air core coil. This system uses an optical fiber transmission system for its signal transmission and power supply. Finally the digital integrator and fourth-order convolution window algorithm as error calculation methods are realized by the virtual instrument with a personal computer. It is found that this system can calibrate a high voltage current transformer while energized, which means avoiding a long calibrating period in the power system and the loss of power metering expense. At the same time, it has a wide dynamic range and frequency band, and it can achieve a high accuracy measurement in a complex electromagnetic field environment. The experimental results and the on-site operation results presented in the last part of the paper, prove that it can reach the 0.05 accuracy class and is easy to operate on site.

  2. A scalable silicon photonic chip-scale optical switch for high performance computing systems

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    A scalable silicon photonic chip-scale optical switch for high performance computing systems-scale optical switch for scalable interconnect network in high performance computing systems. The proposed

  3. DIII-D ICRF high voltage power supply regulator upgrade

    SciTech Connect (OSTI)

    Cary, W.P.; Burley, B.L.; Grosnickle, W.H.

    1997-11-01T23:59:59.000Z

    For reliable operation and component protection, of the 2 MW 30--120 MHz ICRF Amplifier System on DIII-D, it is desirable for the amplifier to respond to high VSWR conditions as rapidly as possible. This requires a rapid change in power which also means a rapid change in the high voltage power supply current demands. An analysis of the power supply`s regulator dynamics was needed to verify its expected operation during such conditions. Based on this information it was found that a new regulator with a larger dynamic range and some anticipation capability would be required. This paper will discuss the system requirements, the as-delivered regulator performance, and the improved performance after installation of the new regulator system. It will also be shown how this improvement has made the amplifier perform at higher power levels more reliably.

  4. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    SciTech Connect (OSTI)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01T23:59:59.000Z

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  5. Design of Single-Switch Inverters for Variable Resistance/Load Modulation Operation

    E-Print Network [OSTI]

    Roslaniec, Lukasz

    Single-Switch inverters such as the conventional Class-E inverter are often highly load sensitive, and maintain zero-voltage switching over only a narrow range of load resistances. This paper introduces a design methodology ...

  6. Active high-power RF switch and pulse compression system

    DOE Patents [OSTI]

    Tantawi, Sami G. (San Mateo, CA); Ruth, Ronald D. (Woodside, CA); Zolotorev, Max (Mountain View, CA)

    1998-01-01T23:59:59.000Z

    A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

  7. Understanding and Improving High Voltage Vacuum Insulators for Microsecond Pulses

    SciTech Connect (OSTI)

    Javedani, J B; Goerz, D A; Houck, T L; Lauer, E J; Speer, R D; Tully, L K; Vogtlin, G E; White, A D

    2007-03-05T23:59:59.000Z

    High voltage insulation is one of the main areas of pulsed power research and development, and dielectric breakdown is usually the limiting factor in attaining the highest possible performance in pulsed power devices. For many applications the delivery of pulsed power into a vacuum region is the most critical aspect of operation. The surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This mode of breakdown, called surface flashover, imposes serious limitations on the power flow into a vacuum region. This is especially troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and for applications where relatively long pulses, on the order of several microseconds, are required. The goal of this project is to establish a sound fundamental understanding of the mechanisms that lead to surface flashover, and then evaluate the most promising techniques to improve vacuum insulators and enable high voltage operation at stress levels near the intrinsic bulk breakdown limits of the material. The approach we proposed and followed was to develop this understanding through a combination of theoretical and computation methods coupled with experiments to validate and quantify expected behaviors. In this report we summarize our modeling and simulation efforts, theoretical studies, and experimental investigations. The computational work began by exploring the limits of commercially available codes and demonstrating methods to examine field enhancements and defect mechanisms at microscopic levels. Plasma simulations with particle codes used in conjunction with circuit models of the experimental apparatus enabled comparisons with experimental measurements. The large scale plasma (LSP) particle-in-cell (PIC) code was run on multiprocessor platforms and used to simulate expanding plasma conditions in vacuum gap regions. Algorithms were incorporated into LSP to handle secondary electron emission from dielectric materials to enable detailed simulations of flashover phenomenon. Theoretical studies were focused on explaining a possible mechanism for anode initiated surface flashover that involves an electron avalanche process starting near the anode, not a mechanism involving bulk dielectric breakdown. Experiments were performed in Engineering's Pulsed Power Lab using an available 100-kV, 10-{micro}s pulse generator and vacuum chamber. The initial experiments were done with polyethylene insulator material in the shape of a truncated cone cut at +45{sup o} angle between flat electrodes with a gap of 1.0 cm. The insulator was sized so there were no flashovers or breakdowns under nominal operating conditions. Insulator flashover or gap closure was induced by introducing a plasma source, a tuft of velvet, in proximity to the insulator or electrode.

  8. (Insulating materials and large high voltage electric systems)

    SciTech Connect (OSTI)

    Dale, S.J.

    1990-09-18T23:59:59.000Z

    The traveler attended the 33rd Session of CIGRE (The International Conference on Large High Voltage Electric Systems in Paris, France) as a US technical expert advisor the Study Committee 15, Insulating Materials. Over 200 papers were discussed, contributed from over 45 countries at the conference on all aspects of electric power generation and transmission. Of special interest was a panel session on superconducting technology for electric power systems and the participation on a new task force on the electrical insulation at cryogenic temperatures. Significant insight was gained into the development of superconducting power technologies in Europe and Japan. CIGRE has set up a committee to follow the development in research on the biological effects of electric and magnetic fields. The traveler also visited the Centre for Electric Power Engineering at the University of Strathclyde, Glasgow, Scotland and discussed research on degradation of polymeric cable insulation and gas insulated equipment. 5 refs.

  9. Effect of high-voltage nanosecond pulses on complex plasmas

    SciTech Connect (OSTI)

    Pustylnik, M. Y.; Ivlev, A. V.; Thomas, H. M.; Morfill, G. E. [Max-Planck-Institut fuer Extraterrestrische Physik, Giessenbachstrasse, 85741 Garching (Germany); Vasilyak, L. M.; Vetchinin, S. P.; Polyakov, D. N.; Fortov, V. E. [Joint Institute for High Temperatures, Russian Academy of Sciences, Izhorskaya 13/19, 125412 Moscow (Russian Federation)

    2009-11-15T23:59:59.000Z

    Influence of high-voltage (1-11 kV) pulses of nanosecond (20 ns) duration on microparticles levitating in a rf plasma is studied. It is shown that the pulses produce significant influence on the plasma, causing perturbations with the relaxation time of the order of 10{sup -4} s. This time is sufficient for the microparticle to acquire significant kinetic energy. Application of repetitive pulses leads to the vertical oscillations of the microparticles. Clusters, consisting of small number of microparticles, exhibit parametric instabilities of horizontal modes under the effect of repetitive pulses. It was shown that the parametric instability is caused by the vertical oscillations of the microparticles in the nonuniform environment of the sheath.

  10. Summary of multiterminal high-voltage direct current transmission technology

    SciTech Connect (OSTI)

    Biggs, R.B.; Jewell, W.T.

    1984-05-01T23:59:59.000Z

    This report summarizes the present state of multiterminal (MT) high-voltage direct current (HVDC) power transmission. The purpose is to reassess the need for HVDC circuit breakers and to identify needed research for MT HVDC. The fundamentals of this technology are presented, and previous research and development is reviewed. Although no MT HVDC systems have yet been built, many concepts have been proposed. Some require a dc breaker, and others do not. Both options have advantages and disadvantages for various applications, so the selection will depend on the proposed application. Research is needed to define operating characteristics of various MT HVDC systems. In some applications, dc breakers will be useful, so research into HVDC interruption should continue. Also, dc fault detection and control algorithms for MT systems should be studied.

  11. Plasma Switch for High-Power Active Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay L. [Omega-P, Inc.] [Omega-P, Inc.

    2013-11-04T23:59:59.000Z

    Results are presented from experiments carried out at the Naval Research Laboratory X-band magnicon facility on a two-channel X-band active RF pulse compressor that employed plasma switches. Experimental evidence is shown to validate the basic goals of the project, which include: simultaneous firing of plasma switches in both channels of the RF circuit, operation of quasi-optical 3-dB hybrid directional coupler coherent superposition of RF compressed pulses from both channels, and operation of the X-band magnicon directly in the RF pulse compressor. For incident 1.2 ?s pulses in the range 0.63 ? 1.35 MW, compressed pulses of peak powers 5.7 ? 11.3 MW were obtained, corresponding to peak power gain ratios of 8.3 ? 9.3. Insufficient bakeout and conditioning of the high-power RF circuit prevented experiments from being conducted at higher RF input power levels.

  12. Why and how should innovative industries with high consumer switching costs be re-regulated?

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Why and how should innovative industries with high consumer switching costs be re-regulated? N-00973051,version1-3Apr2014 #12;Why and how should innovative industries with high consumer switching costs be re-regulated? Jackie Krafft1 and Evens Salies2 Abstract The existence of costs to consumers to switch

  13. High sensitivity bulk electro-optic modulator field sensor for high voltage environments

    E-Print Network [OSTI]

    Shy,Jow-Tsong

    High sensitivity bulk electro-optic modulator field sensor for high voltage environments Mao December 2004) An optical electric field sensor is an effective instrument for surveying the electric attacked by unexpected electrical shocks through the metal cable of the sensor. Sensing by optical sensors

  14. High voltage power supply with modular series resonant inverters

    DOE Patents [OSTI]

    Dreifuerst, G.R.; Merritt, B.T.

    1995-07-18T23:59:59.000Z

    A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360{degree}/n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit. 11 figs.

  15. High voltage power supply with modular series resonant inverters

    DOE Patents [OSTI]

    Dreifuerst, Gary R. (Livermore, CA); Merritt, Bernard T. (Livermore, CA)

    1995-01-01T23:59:59.000Z

    A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360.degree./n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit.

  16. Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

    SciTech Connect (OSTI)

    Maxson, Jared; Bazarov, Ivan; Dunham, Bruce; Dobbins, John; Liu, Xianghong; Smolenski, Karl [Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, New York 14853 (United States)

    2014-09-15T23:59:59.000Z

    A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. These results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.

  17. activated si-gaas high-voltage: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: ??This thesis is concerned with developing a new approach to high voltage transformers condition monitoring, which involve partial discharge (PD) measurement and...

  18. Method and apparatus for connecting high voltage leads to a high temperature super-conducting transformer

    SciTech Connect (OSTI)

    Golner, Thomas M.; Mehta, Shirish P.

    2005-07-26T23:59:59.000Z

    A method and apparatus for connecting high voltage leads to a super-conducting transformer is provided that includes a first super-conducting coil set, a second super-conducting coil set, and a third super-conducting coil set. The first, second and third super-conducting coil sets are connected via an insulated interconnect system that includes insulated conductors and insulated connectors that are utilized to connect the first, second, and third super-conducting coil sets to the high voltage leads.

  19. Design and Evaluation of Scalable Switching Fabrics for High-Performance Routers

    E-Print Network [OSTI]

    Tzeng, Nian-Feng

    high scalability and low costs. The considered switching fabrics are based on a multistage structure. The buffered switching fabrics under our consideration are scalable and of low costs, ideally suitable's for packets to move from their arrival LC's toward their destined LC's. Switching fabrics naturally affect

  20. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17T23:59:59.000Z

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  1. High frequency AC power converter for low voltage circuits

    E-Print Network [OSTI]

    Salazar, Nathaniel Jay Tobias

    2012-01-01T23:59:59.000Z

    This thesis presents a novel AC power delivery architecture that is suitable for VHF frequency (50-100MHz) polyphase AC/DC power conversion in low voltage integrated circuits. A complete AC power delivery architecture was ...

  2. Radio-frequency powered glow discharge device and method with high voltage interface

    DOE Patents [OSTI]

    Duckworth, Douglas C. (Knoxville, TN); Marcus, R. Kenneth (Clemson, SC); Donohue, David L. (Vienna, AT); Lewis, Trousdale A. (Oak Ridge, TN)

    1994-01-01T23:59:59.000Z

    A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components.

  3. Radio-frequency powered glow discharge device and method with high voltage interface

    DOE Patents [OSTI]

    Duckworth, D.C.; Marcus, R.K.; Donohue, D.L.; Lewis, T.A.

    1994-06-28T23:59:59.000Z

    A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components. 11 figures.

  4. RF-MEMS capacitive switches with high reliability

    DOE Patents [OSTI]

    Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

    2013-09-03T23:59:59.000Z

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

  5. Chapter 19. High Voltage Insulation, Diagnostics and Energetic Electron and Photon Beam Interactions

    E-Print Network [OSTI]

    Chapter 19. High Voltage Insulation, Diagnostics and Energetic Electron and Photon Beam Interactions 19-1 High Voltage Insulation, Diagnostics and Energetic Electron and Photon Beam Interactions 1. DC Properties of Modern Filled Epoxy Insulation Academic and Research Staff Dr. Chathan Cooke Sponsor

  6. High voltage transformers. (Latest citations from the Inspec database). NewSearch

    SciTech Connect (OSTI)

    Not Available

    1994-11-01T23:59:59.000Z

    The bibliography contains citations concerning materials and performance of insulators used for high voltage transformers. Topics examine use of mica-fibers, gases, mica filled epoxies, and ceramics. Effects of insulation aging are reviewed, and acceptance testing of high voltage power transformers and apparatus is also examined. (Contains a minimum of 104 citations and includes a subject term index and title list.)

  7. High voltage transformers. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search

    SciTech Connect (OSTI)

    NONE

    1996-08-01T23:59:59.000Z

    The bibliography contains citations of selected patents concerning high voltage transformers. Included are hybrid, video, rectifier, x-ray diagnostic generator, temperature control system, and printed circuit wound high voltage transformers. The fabrication, assembly, and testing of these transformers are also presented. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  8. High voltage transformers. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search

    SciTech Connect (OSTI)

    NONE

    1995-07-01T23:59:59.000Z

    The bibliography contains citations of selected patents concerning high voltage transformers. Included are hybrid, video, rectifier, x-ray diagnostic generator, temperature control system, and printed circuit wound high voltage transformers. The fabrication, assembly, and testing of these transformers are also presented. (Contains 50-250 citations and includes a subject term index and title list.)

  9. A Noise-Shaped Switched-Capacitor DC-DC Voltage Regulator A. Rao, W.McIntyre 1

    E-Print Network [OSTI]

    Moon, Un-Ku

    -dc converter with fractional gains. The charge pump used to convert the input voltage acts as a D/A converter the inductive conversion topology has been the standard solution to providing a constant and stable voltage from a battery. With the continued shrinking of the hand-held devices as cell phones, PDA's, pagers and laptops

  10. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    DOE Patents [OSTI]

    Murty, Balarama Vempaty (West Bloomfield, MI)

    2000-01-01T23:59:59.000Z

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  11. Triple voltage dc-to-dc converter and method

    DOE Patents [OSTI]

    Su, Gui-Jia (Knoxville, TN)

    2008-08-05T23:59:59.000Z

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  12. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, K.

    1983-08-09T23:59:59.000Z

    A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

  13. Voltage Sequence Control Based High-Current Rectifier System

    E-Print Network [OSTI]

    Paderborn, Universität

    of transformer. A passive filter is added at the primary side to achieve power factor improvement over the range of output voltage. This scheme is optimized to determine optimum turns ratio of the transformer and optimum not enforce unity power factor operation and guidelines provided by harmonic standards such as IEEE-519

  14. An AWGR based Low-Latency Optical Switch for Data Centers and High Performance Computing Systems

    E-Print Network [OSTI]

    Kolner, Brian H.

    i An AWGR based Low-Latency Optical Switch for Data Centers and High Performance Computing Systems based optical switch for data centers and high performance computing systems that builds upon several for Data Centers and High Performance Computing Systems ..i ABSTRACT .....................................

  15. A High-Frequency Resonant Inverter Topology With Low-Voltage Stress

    E-Print Network [OSTI]

    Rivas, Juan M.

    This paper presents a new switched-mode resonant inverter, which we term the inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low ...

  16. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOE Patents [OSTI]

    Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O'Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  17. Public Opinions of Building Additional High-Voltage Electric Power Lines

    E-Print Network [OSTI]

    Tesfatsion, Leigh

    Public Opinions of Building Additional High-Voltage Electric Power Lines A Report to the National-Voltage Electric Power Lines: A Report to the National Science Foundation and the Electric Power Research Center to build new power lines. Residents living in counties with planned routes for new transmission lines

  18. Impact of High Wind Penetration on the Voltage Profile of Distribution Systems

    E-Print Network [OSTI]

    Pota, Himanshu Roy

    of wind generator the voltage of the system may become lower than acceptable voltage level due and wind generator is presented. Simulation results are given in Section III which shows the impact of high--In this paper, simulation results showing the effect of lower and higher penetration of distributed wind

  19. An ultra-low voltage high gain operational transconductance amplifier for biomedical

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    An ultra-low voltage high gain operational transconductance amplifier for biomedical applications that work at ultra low voltage power supply. Moreover, low power dissipation is essential in these systems dissipation is also proposed in [5]. Differential pairs are commonly used as input stages, in an ultra-low

  20. Investigation of In 0.53Ga,,47As/AIAs resonant tunnelifig diodes for high speed switching

    E-Print Network [OSTI]

    Ozbay, Ekmel

    (space charge transport). Unfortunately, large swing voltages in- crease the RTD heat load, forcing calculation, which includes the effects of strain and band bending. Swing voltages over the range OS-l.0 V of 6:l. The minimum rise time in this sample is calculated to be limited by RC switching delays to 1

  1. Cygnus Water Switch Jitter

    SciTech Connect (OSTI)

    Charles V. Mitton, George D. Corrow, Mark D. Hansen, David J. Henderson, et al.

    2008-03-01T23:59:59.000Z

    The Cygnus Dual Beam Radiographic Facility consists of two identical radiographic sources - Cygnus 1 and Cygnus 2. Each source has the following x-ray output: 1-mm diameter spot size, 4 rad at 1 m, 50-ns Full Width Half Max. The diode pulse has the following electrical specifications: 2.25 MV, 60 kA, 60 ns. This Radiographic Facility is located in an underground tunnel test area at the Nevada Test Site (NTS). The sources were developed to produce high-resolution images on subcritical tests which are performed at NTS. Subcritical tests are single-shot, high-value events. For this application, it is desirable to maintain a high level of reproducibility in source output. The major components of the Cygnus machines are: Marx generator, water-filled pulse–forming line (PFL), water-filled coaxial transmission line, three-cell inductive voltage adder, and rod-pinch diode. A primary source of fluctuation in Cygnus shot-to-shot performance is jitter in breakdown of the main PFL switch, which is a “self-break” switch. The PFL switch breakdown time determines the peak PFL charging voltage, which ultimately affects the diode pulse. Therefore, PFL switch jitter contributes to shot-to-shot variation in source endpoint energy and dose. In this paper we will present PFL switch jitter analysis for both Cygnus machines and give the correlation with diode performance. For this analysis the PFL switch on each machine was maintained at a single gap setting which has been used for the majority of shots at NTS. In addition to this analysis, PFL switch performance for different switch gap settings taken recently will be examined. Lastly, implications of source jitter for radiographic diagnosis of subcritical shots will be discussed.

  2. Cygnus PFL Switch Jitter

    SciTech Connect (OSTI)

    C. Mitton, G. Corrow, M. Hansen, D. Henderson, et al.

    2007-07-21T23:59:59.000Z

    The Cygnus Dual Beam Radiographic Facility consists of two identical radiographic sources: Cygnus 1 and Cygnus 2. Each source has the following X-ray output: 1-mm diameter spot size, 4 rads at 1 m, 50-ns full-widthhalf-maximum. The diode pulse has the following electrical specifications: 2.25 MV, 60 kA, 60 ns. This Radiographic Facility is located in an underground tunnel test area at the Nevada Test Site (NTS). The sources were developed to produce high-resolution images on subcritical tests performed at NTS. Subcritical tests are single-shot, high-value events. For this application, it is desirable to maintain a high level of reproducibility in source output. The major components of the Cygnus machines are Marx generator, water-filled pulse forming line (PFL), water-filled coaxial transmission line, threecell inductive voltage adder, and rod-pinch diode. A primary source of fluctuation in Cygnus shot-to-shot performance may be jitter in breakdown of the main PFL switch, which is a “self-break” switch. The PFL switch breakdown time determines the peak PFL charging voltage, which ultimately affects the source X-ray spectrum and dose. Therefore, PFL switch jitter may contribute to shot-to-shot variation in these parameters, which are crucial to radiographic quality. In this paper we will present PFL switch jitter analysis for both Cygnus machines and present the correlation with dose. For this analysis, the PFL switch on each machine was maintained at a single gap setting, which has been used for the majority of shots at NTS. In addition the PFL switch performance for one larger switch gap setting will be examined.

  3. High voltage ignition of high pressure microwave powered UV light sources

    SciTech Connect (OSTI)

    Frank, J.D.; Cekic, M.; Wood, C.H. [Fusion U.V. Curing Systems Corp., Gaithersburg, MD (United States)

    1997-12-31T23:59:59.000Z

    Industrial microwave powered (electrodeless) light sources have been limited to quiescent pressures of {approximately}300 Torr of buffer gas and metal-halide fills. The predominant reason for such restrictions has been the inability to microwave ignite the plasma due to the collisionality of higher pressure fills and/or the electronegativity of halide bulb chemistries. Commercially interesting bulb fills require electric fields for ionization that are often large multiples of the breakdown voltage for air. Many auxiliary ignition methods are evaluated for efficiency and practicality before the choice of a high-voltage system with a retractable external electrode. The scheme utilizes a high voltage pulse power supply and a novel field emission source. Acting together they create localized condition of pressure reduction and high free electron density. This allows the normal microwave fields to drive this small region into avalanche, ignite the bulb, and heat the plasma to its operating point (T{sub e} {approx} 0.5 eV). This process is currently being used in a new generation of lamps, which are using multi-atmospheric excimer laser chemistries and pressure and constituent enhanced metal-halide systems. At the present time, production prototypes produce over 900 W of radiation in a 30 nm band, centered at 308 nm. Similarly, these prototypes when loaded with metal-halide bulb fills produce over 1 kW of radiation in 30 nm wide bands, centered about the wavelength of interest.

  4. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    SciTech Connect (OSTI)

    Litzenberger, Wayne; Lava, Val

    1994-08-01T23:59:59.000Z

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  5. 12003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June 2003.

    E-Print Network [OSTI]

    Atiquzzaman, Mohammed

    12003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June Fu) School of Computer Science University of Oklahoma, Norman, OK 73019-6151. Email: atiq@ou.edu #12;22003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June 2003

  6. Princeton Power Systems (TRL 5 6 Component)- Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage

    Broader source: Energy.gov [DOE]

    Princeton Power Systems (TRL 5 6 Component) - Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage

  7. HIGH-VOLTAGE SPINEL AND POLYANION CATHODES | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't YourTransport(Fact Sheet), GeothermalGrid Integration0-1HAWAI'I CLEANDepartmentDOEHIGH-VOLTAGE

  8. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    SciTech Connect (OSTI)

    Sulaeman, M. Y.; Widita, R. [Department of Physics, Nuclear Physics and Biophysics Research Division, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Bandung (Indonesia)

    2014-09-30T23:59:59.000Z

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of ?1.5 kV with falltime 3 ns and risetime 15 ns into a 50? load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  9. High voltage repetitive pulsed nanosecond discharges as a selective source of reactive species

    E-Print Network [OSTI]

    Guerra García, Carmen

    2011-01-01T23:59:59.000Z

    High voltage nanosecond duration discharges can be used in a repetitive manner to create a sustained pool of short lived excited species and ions and long-lived radicals in a gas. Although the suitability of the Repetitive ...

  10. Current mode integrators and their applications in low-voltage high frequency CMOS signal processing

    E-Print Network [OSTI]

    1993-01-01T23:59:59.000Z

    Low voltage CMOS fully differential integrators for high frequency continuous-time filters using current-mode techniques are presented.. Current mode techniques are employed to avoid the use of the floating differential pair, in order to achieve...

  11. Vehicle Technologies Office Merit Review 2014: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles

    Broader source: Energy.gov [DOE]

    Presentation given by Seeo, Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high-voltage solid polymer...

  12. High voltage transformers. (Latest citations from the INSPEC database). Published Search

    SciTech Connect (OSTI)

    NONE

    1996-02-01T23:59:59.000Z

    The bibliography contains citations concerning materials and performance of insulators used for high voltage transformers. Topics examine use of mica-fibers, gases, mica filled epoxies, and ceramics. Effects of insulation aging are reviewed, and acceptance testing of high voltage power transformers and apparatus is also examined. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  13. High voltage transformers. (Latest citations from the INSPEC database). Published Search

    SciTech Connect (OSTI)

    NONE

    1997-05-01T23:59:59.000Z

    The bibliography contains citations concerning materials and performance of insulators used for high voltage transformers. Topics examine use of mica-fibers, gases, mica filled epoxies, and ceramics. Effects of insulation aging are reviewed, and acceptance testing of high voltage power transformers and apparatus is also examined.(Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  14. TiN coated aluminum electrodes for DC high voltage electron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01T23:59:59.000Z

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore »(Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached ?225?kV bias voltage while generating less than 100?pA of field emission (« less

  15. Proposal for the award of a blanket purchase contract for the supply and maintenance of high-performance Ethernet switches

    E-Print Network [OSTI]

    2014-01-01T23:59:59.000Z

    Proposal for the award of a blanket purchase contract for the supply and maintenance of high-performance Ethernet switches

  16. Utilizing zero-sequence switchings for reversible converters

    DOE Patents [OSTI]

    Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

    2004-12-14T23:59:59.000Z

    A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

  17. Development of Low-Voltage and Large Current DC Power Supply with High-Frequency Transformer Coupling

    E-Print Network [OSTI]

    Fujimoto, Hiroshi

    Development of Low-Voltage and Large Current DC Power Supply with High-Frequency Transformer excellent performance. Keywords DC power supply, low-voltage and large-current, high-frequency transformer Iobe (MACOHO Co., Ltd.) Abstract This paper describes low-voltage and large-current DC power supplies

  18. CREE: Making the Switch

    ScienceCinema (OSTI)

    Grider, David; Palmer, John

    2014-04-09T23:59:59.000Z

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  19. CREE: Making the Switch

    SciTech Connect (OSTI)

    Grider, David; Palmer, John

    2014-03-06T23:59:59.000Z

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  20. Low Voltage High Precision Spatial Light ModulatorsFinal Report

    SciTech Connect (OSTI)

    Papavasiliou, A P

    2005-02-09T23:59:59.000Z

    The goal of this project was to make LLNL a leader in Spatial Light Modulators (SLMs) by developing the technology that will be needed by the next generation of SLMs. We would use new lower voltage actuators and bond those actuators directly to controlling circuitry to break the fundamental limitations that constrain current SLM technology. This three-year project was underfunded in the first year and not funded in the second year. With the funding that was available, we produced actuators and designs for the controlling circuitry that would have been integrated in the second year. Spatial light modulators (SLMs) are arrays of tiny movable mirrors that modulate the wave-fronts of light. SLMs can correct aberrations in incoming light for adaptive optics or modulate light for beam control, optical communication and particle manipulation. MicroElectroMechanical Systems (MEMS) is a technology that utilizes the microfabrication tools developed by the semiconductor industry to fabricate a wide variety of tiny machines. The first generation of MEMS SLMs have improved the functionality of SLMs while drastically reducing per pixel cost making arrays on the order of 1000 pixels readily available. These MEMS SLMs however are limited by the nature of their designs to be very difficult to scale above 1000 pixels and have very limited positioning accuracy. By co-locating the MEMS mirrors with CMOS electronics, we will increase the scalability and positioning accuracy. To do this we will have to make substantial advances in SLM actuator design, and fabrication.

  1. High peak power test of S-band waveguide switches

    SciTech Connect (OSTI)

    Nassiri, A.; Grelick, A.; Kustom, R.L.; White, M.

    1997-08-01T23:59:59.000Z

    The injector and source of particles for the Advanced Photon Source (APS) is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five existing S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized waveguide switches at a peak operating power of 35 MW. A test stand was set up at the Stanford Linear Accelerator Center (SLAC) Klystron-Microwave laboratory to conduct tests characterizing the power handling capability of these waveguide switches. Test results are presented.

  2. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over Our InstagramStructureProposed Action Title:SustainableDepartment ofSwitch Switch

  3. Connecting Renewables Directly to the Grid: Resilient Multi-Terminal HVDC Networks with High-Voltage High-Frequency Electronics

    SciTech Connect (OSTI)

    None

    2012-01-23T23:59:59.000Z

    GENI Project: GE is developing electricity transmission hardware that could connect distributed renewable energy sources, like wind farms, directly to the grid—eliminating the need to feed the energy generated through intermediate power conversion stations before they enter the grid. GE is using the advanced semiconductor material silicon carbide (SiC) to conduct electricity through its transmission hardware because SiC can operate at higher voltage levels than semiconductors made out of other materials. This high-voltage capability is important because electricity must be converted to high-voltage levels before it can be sent along the grid’s network of transmission lines. Power companies do this because less electricity is lost along the lines when the voltage is high.

  4. Demonstration of a hitless bypass switch using nanomechanical perturbation for high-bitrate transparent networks

    E-Print Network [OSTI]

    Chatterjee, Rohit

    We demonstrate an optical hitless bypass switch based on nanomechanical proximity perturbation for high-bitrate transparent networks. Embedded in a single-level ?-imbalanced Mach-Zehnder interferometer, the two ...

  5. Automatic voltage imbalance detector

    DOE Patents [OSTI]

    Bobbett, Ronald E. (Los Alamos, NM); McCormick, J. Byron (Los Alamos, NM); Kerwin, William J. (Tucson, AZ)

    1984-01-01T23:59:59.000Z

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  6. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, R.S.

    1987-11-17T23:59:59.000Z

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile. 2 figs.

  7. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, Ronald S. (Livermore, CA)

    1987-01-01T23:59:59.000Z

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  8. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, R.S.

    1985-08-05T23:59:59.000Z

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  9. High-Voltage Insulators and Components - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh School football High School footballHigh-Pressure

  10. Highline Pacific Northwests High-Voltage Transmission System

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh School football High SchoolBundles to Living

  11. Switching power supply

    DOE Patents [OSTI]

    Mihalka, A.M.

    1984-06-05T23:59:59.000Z

    The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

  12. Static reactive power compensators for high-voltage power systems. Final report

    SciTech Connect (OSTI)

    Not Available

    1981-04-01T23:59:59.000Z

    A study conducted to summarize the role of static reactive power compensators for high voltage power system applications is described. This information should be useful to the utility system planning engineer in applying static var systems (SVS) to high voltage as (HVAC) systems. The static var system is defined as a form of reactive power compensator. The general need for reactive power compensation in HVAC systems is discussed, and the static var system is compared to other devices utilized to provide reactive power compensation. Examples are presented of applying SVS for specific functions, such as the prevention of voltage collapse. The operating principles of commercially available SVS's are discussed in detail. The perormance and active power loss characteristics of SVS types are compared.

  13. Optimizing performance per watt on GPUs in High Performance Computing: temperature, frequency and voltage effects

    E-Print Network [OSTI]

    Price, D C; Barsdell, B R; Babich, R; Greenhill, L J

    2014-01-01T23:59:59.000Z

    The magnitude of the real-time digital signal processing challenge attached to large radio astronomical antenna arrays motivates use of high performance computing (HPC) systems. The need for high power efficiency (performance per watt) at remote observatory sites parallels that in HPC broadly, where efficiency is an emerging critical metric. We investigate how the performance per watt of graphics processing units (GPUs) is affected by temperature, core clock frequency and voltage. Our results highlight how the underlying physical processes that govern transistor operation affect power efficiency. In particular, we show experimentally that GPU power consumption grows non-linearly with both temperature and supply voltage, as predicted by physical transistor models. We show lowering GPU supply voltage and increasing clock frequency while maintaining a low die temperature increases the power efficiency of an NVIDIA K20 GPU by up to 37-48% over default settings when running xGPU, a compute-bound code used in radio...

  14. Design and validation of a high-voltage levitation circuit for electrostatic accelerometers

    SciTech Connect (OSTI)

    Li, G.; Wu, S. C.; Zhou, Z. B.; Bai, Y. Z.; Hu, M.; Luo, J. [MOE Key Laboratory of Fundamental Physical Quantities Measurements, School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)] [MOE Key Laboratory of Fundamental Physical Quantities Measurements, School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2013-12-15T23:59:59.000Z

    A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 ?m, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup ?8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order of magnitude lower.

  15. Dual design resistor for high voltage conditioning and transmission lines

    DOE Patents [OSTI]

    Siggins, Timothy Lynn (Newport News, VA); Murray, Charles W. (Hayes, VA); Walker, Richard L. (Norfolk, VA)

    2007-01-23T23:59:59.000Z

    A dual resistor for eliminating the requirement for two different value resistors. The dual resistor includes a conditioning resistor at a high resistance value and a run resistor at a low resistance value. The run resistor can travel inside the conditioning resistor. The run resistor is capable of being advanced by a drive assembly until an electrical path is completed through the run resistor thereby shorting out the conditioning resistor and allowing the lower resistance run resistor to take over as the current carrier.

  16. Method of making high breakdown voltage semiconductor device

    DOE Patents [OSTI]

    Arthur, Stephen D. (Scotia, NY); Temple, Victor A. K. (Jonesville, NY)

    1990-01-01T23:59:59.000Z

    A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

  17. Development of Low-Voltage and Large-Current DC Power Supply with High-Frequency Transformer Coupling

    E-Print Network [OSTI]

    Fujimoto, Hiroshi

    Development of Low-Voltage and Large-Current DC Power Supply with High-Frequency Transformer-voltage and large-current DC power supply with a high-frequency transformer coupling. The power supply is simply·,Zü"gg"X·C~R,êC"_N^"X Keywords: DC power supply, low-voltage and large-current, high-frequency transformer, leakage inductance 1

  18. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, Kristian (Livermore, CA)

    1983-01-01T23:59:59.000Z

    A switching system for delivering pulses of power from a source (10) to a load (20) using a storage capacitor (C3) charged through a rectifier (D1, D2), and maintained charged to a reference voltage level by a transistor switch (Q1) and voltage comparator (12). A thyristor (22) is triggered to discharge the storage capacitor through a saturable reactor (18) and fractional turn saturable transformer (16) having a secondary to primary turn ratio N of n:l/n=n.sup.2. The saturable reactor (18) functions as a "soaker" while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor (C4) charges, and then switches to a low impedance state to dump the charge of the storage capacitor (C3) into the load through the coupling capacitor (C4). The transformer is comprised of a multilayer core (26) having two secondary windings (28, 30) tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes (32, 34) for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe (40) for a linear particle accelerator and capacitance of a pulse forming network (42). To hold off discharge of the capacitance until it is fully charged, a saturable core (44) is provided around the resistive beampipe (40) to isolate the beampipe from the capacitance (42) until it is fully charged.

  19. Soft-Switching High-Frequency AC-Link Universal Power Converters with Galvanic Isolation 

    E-Print Network [OSTI]

    Amirabadi, Mahshid

    2013-08-07T23:59:59.000Z

    be used in a variety of applications, including photovoltaic power generation, wind power generation, and electric vehicles. In these converters the link current and voltage are both alternating and their frequency can be high, which leads...

  20. Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub Sukhendu-dimensional device simulation to examine the effect of a collector tub on the collector breakdown of the SOI based BJTs. This method involves creating a collector tub by etching the buried oxide followed by an n

  1. The powerful high-voltage glow discharge electron gun and power unit on its base

    SciTech Connect (OSTI)

    Chernov, V.A. [All-Russian Electrotechnical Institute, Moscow (Russian Federation)

    1994-12-31T23:59:59.000Z

    The technical and operational characteristics and features of powerful electron gun with cold cathodes on the basis of high-voltage glow discharge (HGD) are submitted. The systems, ensuring their work are described. Some results of operation and applications of these non-traditional electron guns are presented.

  2. Correlation of PDN Impedance with Jitter and Voltage Margin for High Speed Channels

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    Correlation of PDN Impedance with Jitter and Voltage Margin for High Speed Channels Vishal Laddha vishal.laddha@gatech.edu, madhavan.swaminathan@ece.gatech.edu Abstract: Timing margin (jitter and plane cutouts is a major source of jitter and noise introduced by the package and the printed circuit

  3. CONTROL SYSTEM FOR THE ORNL MULTICHARGED ION RESEARCH FACILITY HIGH-VOLTAGE PLATFORM

    E-Print Network [OSTI]

    CONTROL SYSTEM FOR THE ORNL MULTICHARGED ION RESEARCH FACILITY HIGH-VOLTAGE PLATFORM M. E for the 250-kV platform and beamlines for accelerating and transporting ions produced by an all- permanent of the electrical potentials of the installation, that is at the source, platform, and ground potentials, are inter

  4. Magnetic lens apparatus for a low-voltage high-resolution electron microscope

    DOE Patents [OSTI]

    Crewe, Albert V. (Palos Park, IL)

    1996-01-01T23:59:59.000Z

    A lens apparatus in which a beam of charged particles of low accelerating voltage is brought to a focus by a magnetic field, the lens being situated behind the target position. The lens comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. The lens apparatus comprises the sole focusing lens for high-resolution imaging in a low-voltage scanning electron microscope.

  5. Partial discharge measurements on a high voltage direct current mass impregnated paper cable

    SciTech Connect (OSTI)

    Jeroense, M.J.P. [NKF KABEL B.V., Delft (Netherlands); Kreuger, F.H. [Delft Univ. of Technology (Netherlands)

    1996-12-31T23:59:59.000Z

    Partial discharge measurement has been a good tool for the quality assurance of cables under alternating voltage. With the growing interest in High Voltage Direct Current cables it seems therefore logical to extend this technique for use at direct voltage. The paper describes this technique as used on a HVDC cable with mass impregnated paper. The different phases of operation (no load, full load, cooling phase, etc.) are characterized by a different discharge behavior. Special attention is given to the dangerous cooling phase. Models have been developed which can explain the discharge patterns that were measured. This paper gives an insight in the electrical behavior of a HVDC cable with mass impregnated paper insulation.

  6. Magic mode switching in Yb:CaGdAlO4 laser under high pump power

    E-Print Network [OSTI]

    and interesting properties for high- power and ultra-short-pulse lasers. In fact, by combining both broad emission bandwidth and good thermal prop- erties, it permits us to demonstrate ultra-short pulses [1,2] and highMagic mode switching in Yb:CaGdAlO4 laser under high pump power Frédéric Druon,1, * Mickaël Olivier

  7. High-Voltage Terminal Test of Test Stand for 1-MV Electrostatic Accelerator

    E-Print Network [OSTI]

    Park, Sae-Hoon

    2015-01-01T23:59:59.000Z

    The Korea Multipurpose Accelerator Complex (KOMAC) has been developing a 300-kV test stand for a 1-MV electrostatic accelerator ion source. The ion source and accelerating tube will be installed in a high-pressure vessel. The ion source in the high-pressure vessel is required to have a high reliability. The test stand has been proposed and developed to confirm the stable operating conditions of the ion source. The ion source will be tested at the test stand to verify the long-time operating conditions. The test stand comprises a 300-kV high-voltage terminal, a battery for the ion-source power, a 60-Hz inverter, 200-MHz RF power, a 5-kV extraction power supply, a 300-kV accelerating tube, and a vacuum system. The results of the 300-kV high-voltage terminal tests are presented in this paper.

  8. Development of the Fast Scintillation Detector with Programmable High Voltage Adjustment Suitable for Moessbauer Spectroscopy

    SciTech Connect (OSTI)

    Prochazka, R.; Frydrych, J. [Center for Nanomaterial Research, Faculty of Science Palacky University, Slechtitelu 11, 783 71 Olomouc (Czech Republic); Pechousek, J. [Center for Nanomaterial Research, Faculty of Science Palacky University, Slechtitelu 11, 783 71 Olomouc (Czech Republic); Department of Experimental Physics, Faculty of Science, 17. listopadu 1192/12, 771 46 Olomouc (Czech Republic)

    2010-07-13T23:59:59.000Z

    This work is focused on a development of a compact fast scintillation detector suitable for Moessbauer spectroscopy (low energy X-ray/{gamma}-ray detection) where high counting rates are inevitable. Optimization of this part was necessary for a reliable function, better time resolution and to avoid a detector pulses pile-up effect. The pile-up effect decreases the measurement performance, significantly depends on the source activity and also on the pulse duration. Our new detection unit includes a fast scintillation crystal YAP:Ce, an R6095 photomultiplier tube, a high voltage power supply socket C9028-01 assembly, an AD5252 digital potentiometer with an I2C interface and an AD8000 ultra fast operation preamplifier. The main advantages of this solution lie in a short pulse duration (less than 200 ns), stable operation for high activities, programmable gain of the high voltage supply and compact design in the aluminum housing.

  9. Spintronic switches for ultra low energy global interconnects

    SciTech Connect (OSTI)

    Sharad, Mrigank, E-mail: msharad@purdue.edu; Roy, Kaushik [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-05-07T23:59:59.000Z

    We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.

  10. Using Dielectric Losses to De-Ice Power Transmission Lines with 100 kHz High-Voltage

    E-Print Network [OSTI]

    Using Dielectric Losses to De-Ice Power Transmission Lines with 100 kHz High-Voltage Excitation J DIELECTRIC LOSSES TO DE-ICE POWER TRANSMISSION LINES . . . 1 Using Dielectric Losses to De-Ice Power Transmission Lines with 100 kHz High-Voltage Excitation Joshua D. McCurdy, Charles R. Sullivan and Victor F

  11. A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

    SciTech Connect (OSTI)

    None, None

    2012-01-31T23:59:59.000Z

    The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105?C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

  12. Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs Donghyun Jin

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs Donghyun Jin-resistance (RON) in high- voltage GaN High-Electron-Mobility Transistors (HEMTs). We use a newly proposed dynamic. All rights reserved. 1. Introduction In the last decade, GaN Field-Effect Transistors have emerged

  13. CRYOGENIC LIFETIME TESTS ON A COMMERCIAL EPOXY RESIN HIGH VOLTAGE BUSHING

    SciTech Connect (OSTI)

    Schwenterly, S W [ORNL; Pleva, Ed [Waukesha Electric Systems, Waukesha, WI; Ha, Tam T [ORNL

    2012-01-01T23:59:59.000Z

    High-temperature superconducting (HTS) power devices operating in liquid nitrogen frequently require high-voltage bushings to carry the current leads from the superconducting windings to the room temperature grid connections. Oak Ridge National Laboratory is collaborating with Waukesha Electric Systems, SuperPower, and Southern California Edison to develop and demonstrate an HTS utility power transformer. Previous dielectric high voltage tests in support of this program have been carried out in test cryostats with commercial epoxy resin bushings from Electro Composites Inc. (ECI). Though the bushings performed well in these short-term tests, their long-term operation at high voltage in liquid nitrogen needs to be verified for use on the utility grid. Long-term tests are being carried out on a sample 28-kV-class ECI bushing. The bushing has a monolithic cast, cycloaliphatic resin body and is fire- and shatter-resistant. The test cryostat is located in an interlocked cage and is energized at 25 kVac around the clock. Liquid nitrogen (LN) is automatically refilled every 9.5 hours. Partial discharge, capacitance, and leakage resistance tests are periodically performed to check for deviations from factory values. At present, over 2400 hours have been accumulated with no changes in these parameters. The tests are scheduled to run for four to six months.

  14. High efficiency switching-mode amplifiers for wireless communication systems

    E-Print Network [OSTI]

    Hung, Tsai-Pi

    2008-01-01T23:59:59.000Z

    M. Asbeck, “Design of high-efficiency current-mode class-Dand G. Rabjohn, “A high efficiency Chireix Out- phasingE-A new class of high efficiency tuned single-ended power

  15. Tests of industrial ethylene-propylene rubber high voltage cable for cryogenic use

    E-Print Network [OSTI]

    Balhan, B; Goddard, B; Muratori, G; Otwinowski, S; Rieubland, Jean Michel; Wang, H; CERN. Geneva. SPS and LEP Division

    1999-01-01T23:59:59.000Z

    At the beginning of 1999 UCLA has received a prototype High Voltage Cryogenic Cable supplied fee of charge by Pirelli. The cable is intended for more than ten years of service at 100 kV D.C. and liquid argon temperature. Thecable uses an all welded construction, whichi is axially tight and free of ionizable voids. The cable was submitted to a number of mechanical and electrical tests as described below.

  16. Round-robin artificial contamination test on high voltage dc insulators

    SciTech Connect (OSTI)

    Naito, K.; Schneider, H.M.

    1995-07-01T23:59:59.000Z

    This paper summarizes the results of a worldwide round-robin test of high voltage dc (HVDC) insulators, which was carried out in six laboratories aiming at standardization of the method for artificial contamination tests on HVDC insulators. Flashover characteristics of three kinds of specimens were evaluated by the clean fog and the salt fog procedures. Sufficient information is now available to allow the preparation of provisional international specifications for artificial contamination testing of HVDC insulators.

  17. High efficiency resonant dc/dc converter for solar power applications

    E-Print Network [OSTI]

    Inam, Wardah

    2013-01-01T23:59:59.000Z

    This thesis presents a new topology for a high efficiency dc/dc resonant power converter that utilizes a resistance compression network to provide simultaneous zero voltage switching and near zero current switching across ...

  18. Marine High Voltage Power Conditioning and Transmission System with Integrated Storage DE-EE0003640 Final Report

    SciTech Connect (OSTI)

    Frank Hoffmann, PhD; Aspinall, Rik

    2012-12-10T23:59:59.000Z

    Design, Development, and test of the three-port power converter for marine hydrokinetic power transmission. Converter provides ports for AC/DC conversion of hydrokinetic power, battery storage, and a low voltage to high voltage DC port for HVDC transmission to shore. The report covers the design, development, implementation, and testing of a prototype built by PPS.

  19. LINUDANS -Research and development of high voltage towers. Reykjavik University is working in Collaboration with Linudans, research based company specialized

    E-Print Network [OSTI]

    Karlsson, Brynjar

    LINUDANS - Research and development of high voltage towers. Reykjavik University is working problems regarding the growing energy transport. All products of Linudans are green and environmentally voltage towers is the main focus of Linudans. The company has developed an innovative concept which serves

  20. Single-crystalline monolayer and multilayer graphene nano switches

    SciTech Connect (OSTI)

    Li, Peng; Cui, Tianhong, E-mail: tcui@me.umn.edu [State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University, Beijing 100084 (China); Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Jing, Gaoshan [State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University, Beijing 100084 (China); Zhang, Bo; Sando, Shota [Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2014-03-17T23:59:59.000Z

    Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1?V, and high switching speed about 100?ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

  1. A Mixed-SignalASIC Power-Factor-Correction(PFC) Controller for High Frequency Switching Rectifiers

    E-Print Network [OSTI]

    A Mixed-SignalASIC Power-Factor-Correction(PFC) Controller for High Frequency Switching Rectifiers,but control of other power stages could be derived in the same manner. The final controller is proposedas harmonic content [11-[4]. These controllers generally add complexity and cost to power systems

  2. A narrow-band high-speed switched-capacitor sixth order bandpass ladder filter 

    E-Print Network [OSTI]

    Adut, Jozef

    2002-01-01T23:59:59.000Z

    In narrow-band high-speed switched-capacitor filters, the main limitation comes from the capacitance spread and from amplifier settling time. A secondary clock, that averages at an integer fraction of the main clock signal, is used to reduce...

  3. 12003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June 2003.

    E-Print Network [OSTI]

    Atiquzzaman, Mohammed

    12003 Workshop on High Performance Switching and Routing M.Atiquzzaman, Univ. of Oklahoma, June Mohammed Atiquzzaman School of Computer Science, University of Oklahoma, Norman, OK 73019-6151. Email: atiq.Atiquzzaman, Univ. of Oklahoma, June 2003. Queue Management Passive No preventive packet drop until buffer reaches

  4. A narrow-band high-speed switched-capacitor sixth order bandpass ladder filter

    E-Print Network [OSTI]

    Adut, Jozef

    2002-01-01T23:59:59.000Z

    In narrow-band high-speed switched-capacitor filters, the main limitation comes from the capacitance spread and from amplifier settling time. A secondary clock, that averages at an integer fraction of the main clock signal, is used to reduce...

  5. Analysis and Design of an Organic High Speed Digital Electro-Optic Switch

    E-Print Network [OSTI]

    Ali Akbar Wahedy Zarch; Hassan Kaatuzian; Ahmad Ajdarzadeh Oskouei; Ahmad Amjadi

    2007-05-09T23:59:59.000Z

    We have analyzed and designed an organic high speed digital optical switch (DOS) based on transverse electro-optic effect. In analysis section, we proposed a quantum photonic model (QPM) to explain linear electro-optic (EO) effect. This model interpret this effect by photon-electron interaction in attosecond regime. We simulate applied electric field on molecule and crystal by Monte-Carlo method in time domain. We show how a waveguide response to an optical signal with different wavelengths when a transverse electric field applied to the waveguide. In design section, we configure conceptually a 2 * 2 EO switch with full adiabatic coupler. In this DOS, we use a rib waveguides that its core has been constructed from NPP crystal. This switch is smaller at least to one-half of similar DOS in dimensions.

  6. Analysis and Design of an Organic High Speed Digital Electro-Optic Switch

    E-Print Network [OSTI]

    Zarch, Ali Akbar Wahedy; Oskouei, Ahmad Ajdarzadeh; Amjadi, Ahmad

    2007-01-01T23:59:59.000Z

    We have analyzed and designed an organic high speed digital optical switch (DOS) based on transverse electro-optic effect. In analysis section, we proposed a quantum photonic model (QPM) to explain linear electro-optic (EO) effect. This model interpret this effect by photon-electron interaction in attosecond regime. We simulate applied electric field on molecule and crystal by Monte-Carlo method in time domain. We show how a waveguide response to an optical signal with different wavelengths when a transverse electric field applied to the waveguide. In design section, we configure conceptually a 2 * 2 EO switch with full adiabatic coupler. In this DOS, we use a rib waveguides that its core has been constructed from NPP crystal. This switch is smaller at least to one-half of similar DOS in dimensions.

  7. Electric power high-voltage transmission lines: Design options, cost, and electric and magnetic field levels

    SciTech Connect (OSTI)

    Stoffel, J.B.; Pentecost, E.D.; Roman, R.D.; Traczyk, P.A.

    1994-11-01T23:59:59.000Z

    This report provides background information about (1) the electric and magnetic fields (EMFs) of high-voltage transmission lines at typical voltages and line configurations and (2) typical transmission line costs to assist on alternatives in environmental documents. EMF strengths at 0 {+-} 200 ft from centerline were calculated for ac overhead lines, and for 345 and 230-kV ac underground line and for a {+-}450-kV dc overhead line. Compacting and height sensitivity factors were computed for the variation in EMFs when line conductors are moved closer or raised. Estimated costs for the lines are presented and discussed so that the impact of using alternative strategies for reducing EMF strengths and the implications of implementing the strategies can be better appreciated.

  8. Novel Nonflammable Electrolytes for Secondary Magnesium Batteries and High Voltage Electrolytes for Electrochemcial Supercapacitors

    SciTech Connect (OSTI)

    Dr. Brian Dixon

    2008-12-30T23:59:59.000Z

    Magnesium has been used successfully in primary batteries, but its use in rechargeable cells has been stymied by the lack of suitable non-aqueous electrolyte that can conduct Mg+2 species, combined with poor stripping and plating properties. The development of a suitable cathode material for rechargeable magnesium batteries has also been a roadblock, but a nonflammable electrolyte is key. Likewise, the development of safe high voltage electrochemical supercapaitors has been stymied by the use of flammable solvents in the liquid electrolyte; to wit, acetonitrile. The purpose of the research conducted in this effort was to identify useful compositions of magnesium salts and polyphosphate solvents that would enable magnesium ions to be cycled within a secondary battery design. The polyphosphate solvents would provide the solvent for the magnesium salts while preventing the electrolyte from being flammable. This would enable these novel electrolytes to be considered as an alternative to THF-based electrolytes. In addition, we explored several of these solvents together with lithium slats for use as high voltage electrolytes for carbon-based electrochemical supercapacitors. The research was successful in that: 1) Magnesium imide dissolved in a phosphate ester solvent that contains a halogented phosphate ester appears to be the preferred electrolyte for a rechargeable Mg cell. 2) A combination of B-doped CNTs and vanadium phosphate appear to be the cathode of choice for a rechargeable Mg cell by virtue of higher voltage and better reversibility. 3) Magnesium alloys appear to perform better than pure magnesium when used in combination with the novel polyphosphate electrolytes. Also, this effort has established that Phoenix Innovationâ??s family of phosphonate/phosphate electrolytes together with specific lithium slats can be used in supercapacitor systems at voltages of greater than 10V.

  9. A new class of high force, low-voltage, compliant actuation system

    SciTech Connect (OSTI)

    RODGERS,M. STEVEN; KOTA,SRIDHAR; HETRICK,JOEL; LI,ZHE; JENSEN,BRIAN D.; KRYGOWSKI,THOMAS W.; MILLER,SAMUEL L.; BARNES,STEPHEN MATTHEW; BURG,MICHAEL STANLEY

    2000-04-10T23:59:59.000Z

    Although many actuators employing electrostatic comb drives have been demonstrated in a laboratory environment, widespread acceptance in mass produced microelectromechanical systems (MEMS) may be limited due to issues associated with low drive force, large real estate demands, high operating voltages, and reliability concerns due to stiction. On the other hand, comb drives require very low drive currents, offer predictable response, and are highly compatible with the fabrication technology. The expand the application space and facilitate the widespread deployment of self-actuated MEMS, a new class of advanced actuation systems has been developed that maintains the highly desirable aspects of existing components, while significantly diminishing the issues that could impede large scale acceptance. In this paper, the authors will present low-voltage electrostatic actuators that offer a dramatic increase in force over conventional comb drive designs. In addition, these actuators consume only a small fraction of the chip area previously used, yielding significant gains in power density. To increase the stroke length of these novel electrostatic actuators, the authors have developed highly efficient compliant stroke amplifiers. The coupling of compact, high-force actuators with fully compliant displacement multipliers sets a new paradigm for highly integrated microelectromechanical systems.

  10. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-01T23:59:59.000Z

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>?A) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore »by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

  11. Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

    SciTech Connect (OSTI)

    J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman

    2011-04-01T23:59:59.000Z

    GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.

  12. Power conversion architecture for grid interface at high switching frequency

    E-Print Network [OSTI]

    Lim, Seungbum

    This paper presents a new power conversion architecture for single-phase grid interface. The proposed architecture is suitable for realizing miniaturized ac-dc converters operating at high frequencies (HF, above 3 MHz) and ...

  13. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    SciTech Connect (OSTI)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01T23:59:59.000Z

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  14. An optical fan for light beams for high-precision optical measurements and optical switching

    E-Print Network [OSTI]

    Zhi-Yuan Zhou; Yan Li; Dong-Sheng Ding; Yun-Kun Jiang; Wei Zhang; Shuai Shi; Bao-Sen Shi; Guang-Can Guo

    2014-05-08T23:59:59.000Z

    The polarization and orbital angular momentum properties of light are of great importance in optical science and technology in the fields of high precision optical measurements and high capacity and high speed optical communications. Here we show, a totally new method, based on a combination of these two properties and using the thermal dispersion and electro-optical effect of birefringent crystals, the construction of a simple and robust scheme to rotate a light beam like a fan. Using a computer-based digital image processing technique, we determine the temperature and the thermal dispersion difference of the crystal with high resolution. We also use the rotation phenomenon to realize thermo-optic and electro-optic switches. The basic operating principles for measurement and switching processes are presented in detail. The methods developed here will have wide practical applicability in various fields, including remote sensing, materials science and optical communication networks.

  15. Design of high order switched resistor momolithic filters using NMOS technology

    E-Print Network [OSTI]

    Aguilar, Raul Antonio

    1983-01-01T23:59:59.000Z

    DESIGN OF HIGH ORDER SWITCHED RESISTOR MONOLITHIC FILTERS USING NMOS TECHNOLOGY A Thesis by RAUL ANTONIO AGUILAR Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE August 1983 Major Subject: Electrical Engineering DESIGN OF HIGH ORDER SMITCHED RESISTOR MONOLITHIC FILTERS USING NMOS TECHNOLOGY A Thesis by RAUL ANTONIO AGUILAR Approved as to style and content by: Phill&p E. Allen (Chairman...

  16. DC BUFFERING AND FLOATING CURRENT FOR A HIGH VOLTAGE IMB APPLICATION

    SciTech Connect (OSTI)

    J.L. Morrison

    2014-08-01T23:59:59.000Z

    An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

  17. Design Techniques for High Speed Low Voltage and Low Power Non-Calibrated Pipeline Analog to Digital Converters

    E-Print Network [OSTI]

    Assaad, Rida Shawky

    2011-02-22T23:59:59.000Z

    DESIGN TECHNIQUES FOR HIGH SPEED LOW VOLTAGE AND LOW POWER NON-CALIBRATED PIPELINE ANALOG TO DIGITAL CONVERTERS A Dissertation by RIDA SHAWKY ASSAAD Submitted to the Office of Graduate Studies of Texas A&M University... in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY December 2009 Major Subject: Electrical Engineering DESIGN TECHNIQUES FOR HIGH SPEED LOW VOLTAGE AND LOW POWER NON-CALIBRATED PIPELINE ANALOG TO DIGITAL...

  18. 2007 IEEE International Conference on Signal Processing and Communications (ICSPC 2007), 24-27 November 2007, Dubai, United Arab Emirates HYBRID SCHEDULING IN HIGH-SPEED PACKET SWITCHES

    E-Print Network [OSTI]

    Kuzmanov, Georgi

    -27 November 2007, Dubai, United Arab Emirates HYBRID SCHEDULING IN HIGH-SPEED PACKET SWITCHES Lotfi Mhamdi

  19. The commercial development of water repellent coatings for high voltage transmission lines

    SciTech Connect (OSTI)

    Hunter, Scott Robert [ORNL

    2013-10-01T23:59:59.000Z

    The purpose of the Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC and Southwire Company was to jointly develop a low cost, commercially viable, water-repellant anti-icing coating system for high voltage transmission lines. Icing of power lines and other structures caused by freezing rain events occurs annually in the United States, and leads to severe and prolonged power outages. These outages cause untold economic and personal distress for many American families and businesses. Researchers at the Department of Energy s Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee have previously developed a set of superhydrophobic coatings with remarkable anti-icing properties that could potentially be sprayed or painted onto high-tension power lines and pylons. These coatings drastically reduce ice accumulation on these structures during freezing rain events. The project involved obtaining technical input, supplies and test high voltage cables from Southwire, along with the joint development of anti-icing coating techniques, which would result in a commercial license agreement between Southwire and ORNL, and potentially other companies requiring water repellent anti-icing coatings.

  20. The commercial development of water repellent coatings for high voltage transmission lines

    SciTech Connect (OSTI)

    Hunter, S. R. [ORNL] [ORNL; Daniel, A. [Southwire Company] [Southwire Company

    2013-10-31T23:59:59.000Z

    The purpose of the Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC and Southwire Company was to jointly develop a low cost, commercially viable, water-repellant anti-icing coating system for high voltage transmission lines. Icing of power lines and other structures caused by freezing rain events occurs annually in the United States, and leads to severe and prolonged power outages. These outages cause untold economic and personal distress for many American families and businesses. Researchers at the Department of Energy?s Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee have previously developed a set of superhydrophobic coatings with remarkable anti-icing properties that could potentially be sprayed or painted onto high-tension power lines and pylons. These coatings drastically reduce ice accumulation on these structures during freezing rain events. The project involved obtaining technical input, supplies and test high voltage cables from Southwire, along with the joint development of anti-icing coating techniques, which would result in a commercial license agreement between Southwire and ORNL, and potentially other companies requiring water repellent anti-icing coatings.

  1. An investigation of irregular switching in three phase adjustable speed motor drives without neutral connection

    E-Print Network [OSTI]

    1990-01-01T23:59:59.000Z

    ELIMINATION OF SWITCHING IRREG ULARITIES . . CHAPTER Page V. l Two Independent Current Controller . . V. 2 Controlling the Duration of Null State 44 V. 3 Applying Hysteresis Control on Error Current V. 4 Elimination oi' Null Switching State 45 V. 5... it possible to overcome these limitations of dc machine, by using a, high performance ac motor drive. Most of these motor drives utilize a, current controller which attempts to switch a pulse width modulated voltage source inverter to force the motor...

  2. Isolated and soft-switched power converter

    DOE Patents [OSTI]

    Peng, Fang Zheng (Knoxville, TN); Adams, Donald Joe (Knoxville, TN)

    2002-01-01T23:59:59.000Z

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  3. Power applications of high-temperature superconductivity: Variable speed motors, current switches, and energy storage for end use

    SciTech Connect (OSTI)

    Hawsey, R.A. [Oak Ridge National Lab., TN (United States); Banerjee, B.B.; Grant, P.M. [Electric Power Research Inst., Palo Alto, CA (United States)

    1996-08-01T23:59:59.000Z

    The objective of this project is to conduct joint research and development activities related to certain electric power applications of high-temperature superconductivity (HTS). The new superconductors may allow development of an energy-efficient switch to control current to variable speed motors, superconducting magnetic energy storage (SMES) systems, and other power conversion equipment. Motor types that were considered include induction, permanent magnet, and superconducting ac motors. Because it is impractical to experimentally alter certain key design elements in radial-gap motors, experiments were conducted on an axial field superconducting motor prototype using 4 NbTi magnets. Superconducting magnetic energy storage technology with 0.25--5 kWh stored energy was studied as a viable solution to short duration voltage sag problems on the customer side of the electric meter. The technical performance characteristics of the device wee assembled, along with competing technologies such as active power line conditioners with storage, battery-based uninterruptible power supplies, and supercapacitors, and the market potential for SMES was defined. Four reports were prepared summarizing the results of the project.

  4. High-Q silica zipper cavity for optical radiation pressure driven MOMS switch

    SciTech Connect (OSTI)

    Tetsumoto, Tomohiro; Tanabe, Takasumi, E-mail: takasumi@elec.keio.ac.jp [Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi Kohoku, Yokohama 223-8522 (Japan)

    2014-07-15T23:59:59.000Z

    We design a silica zipper cavity that has high optical and mechanical Q (quality factor) values and demonstrate numerically the feasibility of a radiation pressure driven micro opto-mechanical system (MOMS) directional switch. The silica zipper cavity has an optical Q of 4.0 × 10{sup 4} and an effective mode volume V{sub mode} of 0.67?{sup 3} when the gap between two cavities is 34 nm. The mechanical Q (Q{sub m}) is determined by thermo-elastic damping and is 2.0 × 10{sup 6} in a vacuum at room temperature. The opto-mechanical coupling rate g{sub OM} is as high as 100 GHz/nm, which allows us to move the directional cavity-waveguide system and switch 1550-nm light with 770-nm light by controlling the radiation pressure.

  5. Measurement of low radioactivity background in a high voltage cable by high resolution inductively coupled plasma mass spectrometry

    SciTech Connect (OSTI)

    Vacri, M. L. di; Nisi, S.; Balata, M. [Gran Sasso National Laboratory, Chemistry Service, SS 17bis km 18.910, 67100 Assergi (Aq) (Italy)] [Gran Sasso National Laboratory, Chemistry Service, SS 17bis km 18.910, 67100 Assergi (Aq) (Italy)

    2013-08-08T23:59:59.000Z

    The measurement of naturally occurring low level radioactivity background in a high voltage (HV) cable by high resolution inductively coupled plasma mass spectrometry (HR ICP MS) is presented in this work. The measurements were performed at the Chemistry Service of the Gran Sasso National Laboratory. The contributions to the radioactive background coming from the different components of the heterogeneous material were separated. Based on the mass fraction of the cable, the whole contamination was calculated. The HR ICP MS results were cross-checked by gamma ray spectroscopy analysis that was performed at the low background facility STELLA (Sub Terranean Low Level Assay) of the LNGS underground lab using HPGe detectors.

  6. Stabilization of turbulent lifted jet flames assisted by pulsed high voltage discharge

    SciTech Connect (OSTI)

    Criner, K.; Cessou, A.; Louiche, J.; Vervisch, P. [CORIA UMR 6614 CNRS-Universite et INSA de Rouen, University of Rouen, 76801 Saint Etienne du Rouvray (France)

    2006-01-01T23:59:59.000Z

    To reduce fuel consumption or the pollutant emissions of combustion (furnaces, aircraft engines, turbo-reactors, etc.), attempts are made to obtain lean mixture combustion regimes. These lead to poor stability of the flame. Thus, it is particularly interesting to find new systems providing more flexibility in aiding flame stabilization than the usual processes (bluff-body, stabilizer, quarl, swirl, etc.). The objective is to enlarge the stability domain of flames while offering flexibility at a low energy cost. Evidence is presented that the stabilization of a turbulent partially premixed flame of more than 10 kW can be enhanced by pulsed high-voltage discharges with power consumption less than 0.1% of the power of the flame. The originality of this work is to demonstrate that very effective stabilization of turbulent flames is obtained when high-voltage pulses with very short rise times are used (a decrease by 300% in terms of liftoff height for a given exit jet velocity can be reached) and to provide measurements of minimum liftoff height obtained with discharge over a large range of the stability domain of the lifted jet flame.

  7. C-H surface diamond field effect transistors for high temperature (400?°C) and high voltage (500?V) operation

    SciTech Connect (OSTI)

    Kawarada, H., E-mail: kawarada@waseda.jp [Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051 (Japan); Tsuboi, H.; Naruo, T.; Yamada, T.; Xu, D.; Daicho, A.; Saito, T. [Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Hiraiwa, A. [Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)

    2014-07-07T23:59:59.000Z

    By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400?°C (673?K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600?V at a gate-drain distance (L{sub GD}) of 7 ?m. We fabricated some MOSFETs for which V{sub B}/L{sub GD}?>?100?V/?m. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-H surface by atomic layer deposition (ALD) at 450?°C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400?°C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400?°C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.

  8. High voltage power supply systems for electron beam and plasma technologies. Its new element base

    SciTech Connect (OSTI)

    Dermengi, P.G.; Kureghan, A.S.; Pokrovsky, S.V.; Tchvanov, V.A.

    1994-12-31T23:59:59.000Z

    Transforming technique and high voltage technique supplementing each other more and more unite in indivisible constructions of modern apparatuses and systems and applicated in modern technologies providing its high efficiency. Specially worked out, ecologically clean, inertial, inflammable perfluororganic liquid is used in elements and electronic apparatuses simultaneously as insulating and cooling media. This liquid is highly fluid, fills tiny cavities in construction elements and in the places of high concentration of losses, where maximum local overheating of active parts or apparatus constructions takes place, it transforms to boiling state with highly intensive taking off of heat energy from cooled surface point. For instance, being cooled by mentioned perfluororganic liquid, copper wire can conduct current to 50 A/mm{sup 2} density, but in ordinary conditions of transformers, reactors and busses, current density can reach only few Amperes. Possibility of considerable increasing of current density, that is reached by means of intensive cooling, provided by worked out liquid, and taking into account its incredibly high insulating features (liquid has electric strength to 50 KV/mm) allows to provide optimum heat regime of active parts of transformers. reactors, condenser, semiconductor devices, resistors, construction elements and electrotechnical apparatus in general. Particularly high effect of decreasing of weight and dimensions characteristics of elements and electrotechnical apparatus in general can be reached under working out of special constructions of each element and apparatus details, adapted to use of mentioned liquid as insulating and cooling media.

  9. Health-hazard evaluation report HETA 81-415-1385, High Voltage Maintenance Corporation, Mentor, Ohio

    SciTech Connect (OSTI)

    Kominsky, J.R.; Lipscomb, J.

    1983-10-01T23:59:59.000Z

    In September 1981 the National Institute for Occupational Safety and Health (NIOSH) was requested to evaluate exposures to polychlorinated biphenyls (PCBs) and to chlorinated benzenes and ethanes for electricians at High Voltage Maintenance (HVM) Corp., Mentor, Ohio. The HVM Corp. services electrical power transformers and capacitors on a contract basis with the work performed both in the field and at the Mentor facilities. On the basis of the data collected, NIOSH concludes that workers were exposed to potentially toxic concentrations of airborne 1,1,1-trichloroethane and PCBs. Significant PCB contamination of work surfaces demonstrate a potential for continued exposure to PCBs via skin contact and ingestion. PCB blood levels also indicate excessive absorption of PCBs. Recommendations for decontamination of the buildings and exposure controls are offered in Section VIII of this report.

  10. Process for measuring degradation of sulfur hexafluoride in high voltage systems

    DOE Patents [OSTI]

    Sauers, I.

    1985-04-23T23:59:59.000Z

    This invention is a method of detecting the presence of toxic and corrosive by-products in high voltage systems produced by electrically induced degradation of SF/sub 6/ insulating gas in the presence of certain impurities. It is an improvement over previous methods because it is extremely sensitive, detecting by-products present in parts per billion concentrations, and because the device employed is of a simple design and takes advantage of the by-products natural affinity for fluoride ions. The method employs an ion-molecule reaction cell in which negative ions of the by-products are produced by fluorine attachment. These ions are admitted to a negative ion mass spectrometer and identified by their spectra. This spectrometry technique is an improvement over conventional techniques because the negative ion peaks are strong and not obscured by a major ion spectra of the SF/sub 6/ component as is the case in positive ion mass spectrometry.

  11. Process for measuring degradation of sulfur hexafluoride in high voltage systems

    DOE Patents [OSTI]

    Sauers, Isidor (Knoxville, TN)

    1986-01-01T23:59:59.000Z

    This invention is a method of detecting the presence of toxic and corrosive by-products in high voltage systems produced by electrically induced degradation of SF.sub.6 insulating gas in the presence of certain impurities. It is an improvement over previous methods because it is extremely sensitive, detecting by-products present in parts per billion concentrations, and because the device employed is of a simple design and takes advantage of the by-products natural affinity for fluoride ions. The method employs an ion-molecule reaction cell in which negative ions of the by-products are produced by fluorine attachment. These ions are admitted to a negative ion mass spectrometer and identified by their spectra. This spectrometry technique is an improvement over conventional techniques because the negative ion peaks are strong and not obscured by a major ion spectra of the SF.sub.6 component as is the case in positive ion mass spectrometry.

  12. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    None

    2012-02-13T23:59:59.000Z

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  13. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19T23:59:59.000Z

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  14. FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS

    E-Print Network [OSTI]

    Deng, Xunming

    FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS of Michigan, Ann Arbor, MI 48109, USA ABSTRACT Hydrogenated amorphous silicon (a-Si:H) single- junction solar). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains

  15. Mechanisms of deflagration-to-detonation transition under initiation by high-voltage nanosecond discharges

    SciTech Connect (OSTI)

    Rakitin, Aleksandr E.; Starikovskii, Andrei Yu. [Physics of Nonequilibrium Systems Lab, Moscow Institute of Physics and Technology, 9 Institutski Lane, Dolgoprudny 141700 (Russian Federation)

    2008-10-15T23:59:59.000Z

    An experimental study of detonation initiation in a stoichiometric propane-oxygen mixture by a high-voltage nanosecond gas discharge was performed in a detonation tube with a single-cell discharge chamber. The discharge study performed in this geometry showed that three modes of discharge development were realized under the experimental conditions: a spark mode with high-temperature channel formation, a streamer mode with nonuniform gas excitation, and a transient mode. Under spark and transient initiation, simultaneous ignition inside the discharge channel occurred, forming a shock wave and leading to a conventional deflagration-to-detonation transition (DDT) via an adiabatic explosion. The DDT length and time at 1 bar of initial pressure in the square smooth tube with a 20-mm transverse size amounted to 50 mm and 50{mu}s, respectively. The streamer mode of discharge development at an initial pressure of 1 bar resulted in nonuniform mixture excitation and a successful DDT via a gradient mechanism, which was confirmed by high-speed time resolved ICCD imaging. The gradient mechanism implied a longer DDT time of 150{mu}s, a DDT run-up distance of 50 mm, and an initiation energy of 1 J, which is two orders of magnitude less than the direct initiation energy for a planar detonation under these conditions. (author)

  16. Atmospheric pressure plasma jet with high-voltage power supply based on piezoelectric transformer

    SciTech Connect (OSTI)

    Babij, Micha?; Kowalski, Zbigniew W., E-mail: zbigniew.w.kowalski@pwr.wroc.pl; Nitsch, Karol; Gotszalk, Teodor [Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)] [Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland); Silberring, Jerzy [AGH University of Science and Technology, Al. A. Mickiewicza 30, 30-059 Kraków (Poland)] [AGH University of Science and Technology, Al. A. Mickiewicza 30, 30-059 Kraków (Poland)

    2014-05-15T23:59:59.000Z

    The dielectric barrier discharge plasma jet, an example of the nonthermal atmospheric pressure plasma jet (APPJ), generates low-temperature plasmas that are suitable for the atomization of volatile species and can also be served as an ionization source for ambient mass and ion mobility spectrometry. A new design of APPJ for mass spectrometry has been built in our group. In these plasma sources magnetic transformers (MTs) and inductors are typically used in power supplies but they present several drawbacks that are even more evident when dealing with high-voltage normally used in APPJs. To overcome these disadvantages, high frequency generators with the absence of MT are proposed in the literature. However, in the case of miniaturized APPJs these conventional power converters, built of ferromagnetic cores and inductors or by means of LC resonant tank circuits, are not so useful as piezoelectric transformer (PT) based power converters due to bulky components and small efficiency. We made and examined a novel atmospheric pressure plasma jet with PT supplier served as ionization source for ambient mass spectrometry, and especially mobile spectrometry where miniaturization, integration of components, and clean plasma are required. The objective of this paper is to describe the concept, design, and implementation of this miniaturized piezoelectric transformer-based atmospheric pressure plasma jet.

  17. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    SciTech Connect (OSTI)

    Guo, Jiquan; /SLAC

    2009-03-20T23:59:59.000Z

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  18. A three-level buck converter to regulate a high-voltage DC-to-AC inverter

    E-Print Network [OSTI]

    Schrock, Kenneth C

    2008-01-01T23:59:59.000Z

    A three-level buck converter is designed and analyzed, and shown to be suitable as a high-voltage down converter as a pre-regulation stage for a 600 watt DC-to-AC power inverter. Topology selection for the inverter is ...

  19. Assessment of research directions for high-voltage direct-current power systems. Final report

    SciTech Connect (OSTI)

    Long, W F

    1982-09-01T23:59:59.000Z

    High voltage direct current (HVDC) power transmission continues to be an emerging technology nearly thirty years after its introduction into modern power systems. To date its use has been restricted to either specialized applications having identifiable economic advantages (e.g., breakeven distance) or, rarely, applications where decoupling is needed. Only recently have the operational advantages (e.g., power modulation) of HVDC been realized on operating systems. A research project whose objective was to identify hardware developments and, where appropriate, system applications which can exemplify cost and operational advantages of integrated ac/dc power systems is discussed. The three principal tasks undertaken were: assessment of equipment developments; quantification of operational advantages; and interaction with system planners. Interest in HVDC power transmission has increased markedly over the past several years, and many new systems are now being investigated. The dissemination of information about HVDC, including specifically the symposium undertaken for Task 3, is a critical factor in fostering an understanding of this important adjunct to ac power transmission.

  20. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng (Knoxville, TN); Lai, Jih-Sheng (Blacksburg, VA)

    2002-01-01T23:59:59.000Z

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  1. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng (Oak Ridge, TN); Lai, Jih-Sheng (Knoxville, TN)

    1997-01-01T23:59:59.000Z

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  2. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng; Lai, Jih-Sheng

    2001-04-03T23:59:59.000Z

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  3. Multilevel cascade voltage source inverter with separate DC sources

    DOE Patents [OSTI]

    Peng, F.Z.; Lai, J.S.

    1997-06-24T23:59:59.000Z

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

  4. High voltage power supply. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search

    SciTech Connect (OSTI)

    NONE

    1996-03-01T23:59:59.000Z

    The bibliography contains citations of selected patents concerning high voltage power supply systems and devices. References describe direct and high current power supplies, microprocessor controlled and programmable systems, amplifiers, power supply stabilization, power circuit protection, feedback control, and pulse modulation. Applications cover laser systems, x-ray tubes, electrophoresis, video apparatus, radar and electronic warfare systems, helmet mounted display, and electrosurgery. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  5. High voltage power supply. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search

    SciTech Connect (OSTI)

    NONE

    1997-06-01T23:59:59.000Z

    The bibliography contains citations of selected patents concerning high voltage power supply systems and devices. References describe direct and high current power supplies, microprocessor controlled and programmable systems, amplifiers, power supply stabilization, power circuit protection, feedback control, and pulse modulation. Applications cover laser systems, x-ray tubes, electrophoresis, video apparatus, radar and electronic warfare systems, helmet mounted display, and electrosurgery. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  6. Graphene-oxide-coated LiNi0.5Mn1.5O4 as high voltage cathode for lithium ion batteries with high energy

    E-Print Network [OSTI]

    Zhou, Chongwu

    Graphene-oxide-coated LiNi0.5Mn1.5O4 as high voltage cathode for lithium ion batteries with high Since Sony rst commercialized lithium ion batteries in the early 1990s, the market for lithium ion of the great success of lithium ion battery technology developed for portable electronic devices, higher

  7. Solid state switch

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19T23:59:59.000Z

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  8. Characterization of the Li(Si)/CoS(2) couple for a high-voltage, high-power thermal battery

    SciTech Connect (OSTI)

    GUIDOTTI,RONALD A.; REINHARDT,FREDERICK W.

    2000-02-01T23:59:59.000Z

    In order to determined the capabilities of a thermal battery with high-voltage and high-power requirements, a detailed characterization of the candidate LiSi/LiCl-LiBr-LiF/CoS{sub 2} electrochemical couple was conducted. The rate capability of this system was investigated using 0.75 inch-dia. and 1.25 inch-dia. single and multiple cells under isothermal conditions, where the cells were regularly pulsed at increasingly higher currents. Limitations of the electronic loads and power supplies necessitated using batteries to obtain the desired maximum current densities possible for this system. Both 1.25 inch-dia. and 3 inch-dia. stacks were used with the number of cells ranging from 5 to 20. Initial tests involved 1.25 inch-dia. cells, where current densities in excess of 15 A/cm{sup 2} (>200 W/cm{sup 2}) were attained with 20-cell batteries during 1-s pulses. In subsequent follow-up tests with 3 inch-dia., 10-cell batteries, ten 400-A 1-s pulses were delivered over an operating period often minutes. These tests formed the foundation for subsequent full-sized battery tests with 125 cells with this chemistry.

  9. High voltage capability electrical coils insulated with materials containing SF.sub.6 gas

    DOE Patents [OSTI]

    Lanoue, Thomas J. (Muncie, IN); Zeise, Clarence L. (Penn Township, Allegheny County, PA); Wagenaar, Loren (Muncie, IN); Westervelt, Dean C. (Acme, PA)

    1988-01-01T23:59:59.000Z

    A coil is made having a plurality of layers of adjacent metal conductor windings subject to voltage stress, where the windings have insulation therebetween containing a small number of minute disposed throughout its cross-section, where the voids are voids filled with SF.sub.6 gas to substitute for air or other gaseous materials in from about 60% to about 95% of the cross-sectional void volume in the insulation, thus incorporating an amount of SF.sub.6 gas in the cross-section of the insulation effective to substantially increase corona inception voltages.

  10. Calculation and measurement of a neutral air flow velocity impacting a high voltage capacitor with asymmetrical electrodes

    SciTech Connect (OSTI)

    Malík, M., E-mail: michal.malik@tul.cz; Primas, J.; Kopecký, V.; Svoboda, M. [Faculty of Mechatronics, Informatics and Interdisciplinary Studies, Technical University of Liberec, Liberec, 461 17 (Czech Republic)] [Faculty of Mechatronics, Informatics and Interdisciplinary Studies, Technical University of Liberec, Liberec, 461 17 (Czech Republic)

    2014-01-15T23:59:59.000Z

    This paper deals with the effects surrounding phenomenon of a mechanical force generated on a high voltage asymmetrical capacitor (the so called Biefeld-Brown effect). A method to measure this force is described and a formula to calculate its value is also given. Based on this the authors derive a formula characterising the neutral air flow velocity impacting an asymmetrical capacitor connected to high voltage. This air flow under normal circumstances lessens the generated force. In the following part this velocity is measured using Particle Image Velocimetry measuring technique and the results of the theoretically calculated velocity and the experimentally measured value are compared. The authors found a good agreement between the results of both approaches.

  11. Current-voltage-time characteristics of the reactive Ar/N{sub 2} high power impulse magnetron sputtering discharge

    SciTech Connect (OSTI)

    Magnus, F.; Sveinsson, O. B.; Olafsson, S. [Science Institute, University of Iceland, Dunhaga 3, Reykjavik IS-107 (Iceland); Gudmundsson, J. T. [Science Institute, University of Iceland, Dunhaga 3, Reykjavik IS-107 (Iceland); University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240 (China)

    2011-10-15T23:59:59.000Z

    The discharge current and voltage waveforms have been measured in a reactive high power impulse magnetron sputtering (HiPIMS) Ar/N{sub 2} discharge with a Ti target for 400 {mu}s long pulses. We observe that the current waveform in the reactive Ar/N{sub 2} HiPIMS discharge is highly dependent on the pulse repetition frequency, unlike the non-reactive Ar discharge. The current is found to increase significantly as the frequency is lowered. This is attributed to an increase in the secondary electron emission yield during the self-sputtering phase, when the nitride forms on the target at low frequencies. In addition, self-sputtering runaway occurs at lower discharge voltages when nitrogen is added to the discharge. This illustrates the crucial role of self-sputtering in the behavior of the reactive HiPIMS discharge.

  12. Performance Analysis of a Hybrid Asymmetric Multilevel Inverter for High Voltage Active Power Filter Applications

    E-Print Network [OSTI]

    Catholic University of Chile (Universidad Católica de Chile)

    . of Electrical Engineering (2) Dept. of Electrical Engineering Universidad de Concepción Universidad Católica de and reactive power in power distribution systems [1], [2], [3]. Although many technical papers related power to compensate converter losses and to keep the dc voltages constant. Simulated results for steady

  13. Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes

    SciTech Connect (OSTI)

    Murawski, Caroline, E-mail: caroline.murawski@iapp.de; Fuchs, Cornelius; Hofmann, Simone; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS Scotland (United Kingdom)

    2014-09-15T23:59:59.000Z

    We investigate the properties of N,N?-[(Diphenyl-N,N?-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N?,N?-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2?,7,7?-tetrakis(N,N?-di-p-methylphenylamino)-9,9?-spirobifluorene (Spiro-TTB), and N,N?-di(naphtalene-1-yl)-N,N?-diphenylbenzidine (NPB). The influence of 2,2?-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4?wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35?.1?lm/W (74?.0?lm/W) at 1000?cd/m{sup 2} and reach a very high brightness of 10?000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

  14. A Transformer-less Partial Power Boost Converter for PV Applications Using a Three-Level Switching Cell

    SciTech Connect (OSTI)

    Mohammed Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Somasundaram Essakiappan

    2013-03-01T23:59:59.000Z

    Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semiconductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.

  15. Effect of High-Voltage Heterojunction Bipolar Transistor Collector Design on f(T) and f(MAX)

    SciTech Connect (OSTI)

    Ashby, C.I.H.; Baca, A.G.; Chang, P.C.; Hietala, V.M.

    1999-03-02T23:59:59.000Z

    High-speed InGaP/GaAs heterojunction bipolar transistors (HBTs) for high-voltage circuit applications have been investigated. In order to obtain ideal IV characteristics, a lightly doped (N{sub DC} = 7.5 x 10{sup 15} cm{sup {minus}3}) thick (W{sub C} = 3.5 {micro}m) layer of GaAs was used as the collector layer. The devices fabricated have shown breakdown voltage exceeding 65 V. Device operated at up to a 60V bias, which is the highest operating voltage reported up to date for single heterojunction HBTs. Peak {line_integral}{sub T} and {line_integral}{sub MAX} values of 18 GHz and 29 GHz, respectively, have been achieved on a device with emitter area of 4x 12.5 {micro}m{sup 2}. Both {line_integral}{sub T} and {line_integral}{sub Max} degrades with higher bias, which is related to the elongation of the collector depletion width.

  16. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, R.; Kotter, D.

    1994-04-26T23:59:59.000Z

    An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

  17. Analysis of system wide distortion in an integrated power system utilizing a high voltage DC bus and silicon carbide power devices

    E-Print Network [OSTI]

    Fallier, William F. (William Frederick)

    2007-01-01T23:59:59.000Z

    This research investigates the distortion on the electrical distribution system for a high voltage DC Integrated Power System (IPS). The analysis was concentrated on the power supplied to a propulsion motor driven by an ...

  18. An accurate online calibration system based on combined clamp-shape coil for high voltage electronic current transformers

    SciTech Connect (OSTI)

    Li, Zhen-hua; Li, Hong-bin; Zhang, Zhi [CEEE of Huazhong University of Science and Technology, Wuhan 430074 (China) [CEEE of Huazhong University of Science and Technology, Wuhan 430074 (China); State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Wuhan 430074 (China)

    2013-07-15T23:59:59.000Z

    Electronic transformers are widely used in power systems because of their wide bandwidth and good transient performance. However, as an emerging technology, the failure rate of electronic transformers is higher than that of traditional transformers. As a result, the calibration period needs to be shortened. Traditional calibration methods require the power of transmission line be cut off, which results in complicated operation and power off loss. This paper proposes an online calibration system which can calibrate electronic current transformers without power off. In this work, the high accuracy standard current transformer and online operation method are the key techniques. Based on the clamp-shape iron-core coil and clamp-shape air-core coil, a combined clamp-shape coil is designed as the standard current transformer. By analyzing the output characteristics of the two coils, the combined clamp-shape coil can achieve verification of the accuracy. So the accuracy of the online calibration system can be guaranteed. Moreover, by employing the earth potential working method and using two insulating rods to connect the combined clamp-shape coil to the high voltage bus, the operation becomes simple and safe. Tests in China National Center for High Voltage Measurement and field experiments show that the proposed system has a high accuracy of up to 0.05 class.

  19. Modeling, simulation, and testing of the mechanical dynamics of and RF MEMS switch.

    SciTech Connect (OSTI)

    Sumali, Hartono; Epp, David S.; Massad, Jordan Elias; Dyck, Christopher William; Starr, Michael James

    2005-07-01T23:59:59.000Z

    Mechanical dynamics can be a determining factor for the switching speed of radio-frequency microelectromechanical systems (RF MEMS) switches. This paper presents the simulation of the mechanical motion of a microswitch under actuation. The switch has a plate suspended by springs. When an electrostatic actuation is applied, the plate moves toward the substrate and closes the switch. Simulations are calculated via a high-fidelity finite element model that couples solid dynamics with electrostatic actuation. It incorporates non-linear coupled dynamics and accommodates fabrication variations. Experimental modal analysis gives results in the frequency domain that verifies the natural frequencies and mode shapes predicted by the model. An effective 1D model is created and used to calculate an actuation voltage waveform that minimizes switch velocity at closure. In the experiment, the switch is actuated with this actuation voltage, and the displacements of the switch at various points are measured using a laser Doppler velocimeter through a microscope. The experiments are repeated on several switches from different batches. The experimental results verify the model.

  20. Study of static reactive power compensators for high-voltage power systems. Final report, May 12, 1981

    SciTech Connect (OSTI)

    Byerly, R.T.; Bennon, R.J.; Taylor, E.R. Jr.; Poznaniak, D.T.

    1981-05-12T23:59:59.000Z

    A general study of the application of static VAR compensators (SVC's) to high-voltage transmission systems has been performed. Considerable emphasis has been placed on improvements to synchronous stability, and it is shown that SVC's can provide significant benefits in terms of damping for unstable modes of oscillation and increases in transient stability limits. This report includes descriptions of static VAR compensators, technical and economic comparisons of different compensators, compensator models for system studies, comprehensive study procedures, study results for two small-scale systems, and guidelines for SVC application.

  1. Recommended practice for fire protection for electric generating plants and high voltage direct current converter stations. 2005 ed.

    SciTech Connect (OSTI)

    NONE

    2005-07-01T23:59:59.000Z

    The standard outlines fire safety recommendations for gas, oil, coal, and alternative fuel electric generating plants including high voltage direct current converter stations and combustion turbine units greater than 7500 hp used for electric generation. Provisions apply to both new and existing plants. The document provides fire prevention and fire protection recommendations for the: safety of construction and operating personnel; physical integrity of plant components; and continuity of plant operations. The 2005 edition includes revisions and new art that clarify existing provisions. 5 annexes.

  2. Studies on the switching speed effect of the phase shift keying in SLED for generating high power microwave

    E-Print Network [OSTI]

    Zhengfeng, Xiong; Jian, Yu; Huaibi, Chen; Hui, Ning

    2015-01-01T23:59:59.000Z

    SLAC energy doubler (SLED) type radio-frequency pulse compressors are widely used in large-scale particle accelerators for converting long-duration moderate-power input pulse into short-duration high-power output pulse. The phase shift keying (PSK) is one of the key components in SLED pulse compression systems. Performance of the PSK will influence the output characteristics of SLED, such as rise-time of the output pulse, the maximal peak power gain, and the energy efficiency. In this paper, high power microwave source based on power combining and pulse compression of conventional klystrons was introduced, the nonideal PSK with slow switching speed and without power output during the switching process were investigated, the experimental results with nonideal PSK agreed well with the analytical results.

  3. Improving the performance of stainless-steel DC high voltage photoelectron gun cathode electrodes via gas conditioning with helium or krypton

    SciTech Connect (OSTI)

    Bastaninejad, Mahzad [ODU; Elmustafa, Abdelmageed [ODU; Forman, Eric I. [JLAB; Clark, James [JLAB; Covert, Steven R. [JLAB; Grames, Joseph M. [JLAB; Hansknecht, John C. [JLAB; Hernandez-Garcia, Carlos [JLAB; Poelker, Bernard [JLAB; Suleiman, Riad S. [JLAB

    2014-10-01T23:59:59.000Z

    Gas conditioning was shown to eliminate field emission from cathode electrodes used inside DC high voltage photoelectron guns, thus providing a reliable means to operate photoguns at higher voltages and field strengths. Measurements and simulation results indicate that gas conditioning eliminates field emission from cathode electrodes via two mechanisms: sputtering and implantation, with the benefits of implantation reversed by heating the electrode. We have studied five stainless steel electrodes (304L and 316LN) that were polished to approximately 20 nm surface roughness using diamond grit, and evaluated inside a high voltage apparatus to determine the onset of field emission as a function of voltage and field strength. The field emission characteristics of each electrode varied significantly upon the initial application of voltage but improved to nearly the same level after gas conditioning using either helium or krypton, exhibiting less than 10 pA field emission at ?225 kV bias voltage with a 50 mm cathode/anode gap, corresponding to a field strength of ~13 MV/m. Field emission could be reduced with either gas, but there were conditions related to gas choice, voltage and field strength that were more favorable than others.

  4. High speed transfer switch with 50 kA and 50 kV

    SciTech Connect (OSTI)

    Reass, W.A.; Kasik, R.J.; Wilds, W.A.

    1989-01-01T23:59:59.000Z

    This paper gives the mechanical design and electrical parameters of a pneumatically operated transfer switch. This design is used to switch 3-second 50-kA current pulses, and is easily capable of 75 kA operation (2 {times} 10{sup 10} I{sup 2}t); with water-cooled versions capable of 20 kA continuously. Although the switch is not specifically designed to make or break 50 kA, it is provided with auxiliary Elkonite arcing contacts have proven their value in protecting the main electrodes even under repetitive (50 kA) fault conditions. Included in this presentation will be the results of extensive life testing and associated criteria. 6 figs., 1 tab.

  5. HIGH VOLTAGE TERMINAL IN COSY ELECTRON COOLER V.A. Chekavinskiy, E.A. Bekhtenev, I.A. Gusev, M.N. Kondaurov, V.R. Kozak, E.A. Kuper, V.R.

    E-Print Network [OSTI]

    Kozak, Victor R.

    HIGH VOLTAGE TERMINAL IN COSY ELECTRON COOLER V.A. Chekavinskiy, E.A. Bekhtenev, I.A. Gusev, M acceleration system ­ high voltage terminal. All power and control electronics were placed in a single isolated Voltage Terminal (HVT) in electron cooler is intended for generating of electron cooling beam

  6. Multilevel Cascade H-bridge Inverter DC Voltage Estimation Through Output Voltage Sensing

    E-Print Network [OSTI]

    Tolbert, Leon M.

    system as the inverter power supply may vary. For example, interface of solar panels or fuel cell. The output voltage is then processed by a DSP unit that uses the signals that command the switches

  7. Effect of oxyfluorinated multi-walled carbon nanotube additives on positive temperature coefficient/negative temperature coefficient behavior in high-density polyethylene polymeric switches

    SciTech Connect (OSTI)

    Bai, Byong Chol [Department of Green Energy Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of) [Department of Green Energy Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Department of Fine Chemical Engineering and Applied Chemistry, BK21-E2M, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kang, Seok Chang; Im, Ji Sun [Department of Fine Chemical Engineering and Applied Chemistry, BK21-E2M, Chungnam National University, Daejeon 305-764 (Korea, Republic of)] [Department of Fine Chemical Engineering and Applied Chemistry, BK21-E2M, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Lee, Se Hyun [Department of Electrical and Electronic Engineering, Korea Polytechnic IV College, Daejeon 300-702 (Korea, Republic of)] [Department of Electrical and Electronic Engineering, Korea Polytechnic IV College, Daejeon 300-702 (Korea, Republic of); Lee, Young-Seak, E-mail: youngslee@cnu.ac.kr [Department of Green Energy Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of) [Department of Green Energy Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Department of Fine Chemical Engineering and Applied Chemistry, BK21-E2M, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2011-09-15T23:59:59.000Z

    Graphical abstract: The electrical properties of MWCNT-filled HDPE polymeric switches and their effect on oxyfluorination. Highlights: {yields} Oxyfluorinated MWCNTs were used to reduce the PTC/NTC phenomenon in MWCNT-filled HDPE polymeric switches. {yields} Electron mobility is difficult in MWCNT particles when the number of oxygen functional groups (C-O, C=O) increases by oxyfluorination. {yields} A mechanism of improved electrical properties of oxyfluorinated MWCNT-filled HDPE polymeric switches was suggested. -- Abstract: Multi-walled carbon nanotubes (MWCNTs) were embedded into high-density polyethylene (HDPE) to improve the electrical properties of HDPE polymeric switches. The MWCNT surfaces were modified by oxyfluorination to improve their positive temperature coefficient (PTC) and negative temperature coefficient (NTC) behaviors in HDPE polymeric switches. HDPE polymeric switches exhibit poor electron mobility between MWCNT particles when the number of oxygen functional groups is increased by oxyfluorination. Thus, the PTC intensity of HDPE polymeric switches was increased by the destruction of the electrical conductivity network. The oxyfluorination of MWCNTs also leads to weak NTC behavior in the MWCNT-filled HDPE polymeric switches. This result is attributed to the reduction of the mutual attraction between the MWCNT particles at the melting temperature of HDPE, which results from a decrease in the surface free energy of the C-F bond in MWCNT particles.

  8. Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications

    SciTech Connect (OSTI)

    Sharma, Yogesh, E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu; Misra, Pankaj; Katiyar, Ram S., E-mail: yks181086@gmail.com, E-mail: rkatiyar@uprrp.edu [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, Puerto Rico 00936-8377 (United States)

    2014-08-28T23:59:59.000Z

    Amorphous YCrO{sub 3} (YCO) films were prepared on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ?10{sup 5} between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space–charge limited conduction mechanisms, respectively.

  9. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, J.P.; Emin, D.

    1983-12-21T23:59:59.000Z

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  10. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, John P. (Albuquerque, NM); Emin, David (Albuquerque, NM)

    1986-01-01T23:59:59.000Z

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  11. Ferroelectric opening switches for large-scale pulsed power drivers.

    SciTech Connect (OSTI)

    Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

    2009-11-01T23:59:59.000Z

    Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of these unexpected discoveries have lead to new research directions to address challenges.

  12. Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants

    DOE Patents [OSTI]

    Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

    2014-09-09T23:59:59.000Z

    A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

  13. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

    1994-09-27T23:59:59.000Z

    A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

  14. Charge-pump voltage converter

    DOE Patents [OSTI]

    Brainard, John P. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2009-11-03T23:59:59.000Z

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  15. Soft-Switching High-Frequency AC-Link Universal Power Converters with Galvanic Isolation

    E-Print Network [OSTI]

    Amirabadi, Mahshid

    2013-08-07T23:59:59.000Z

    ) direct drive using wound-field synchronous generator [10]. ...................................................................................................... 6 Figure 6 Dc-dc buck-boost converter: (a) configuration, (b) energizing mode (mode 1), (c...) de-energizing mode (mode 2), (d) voltage and current waveforms ........ 12 Figure 7 An alternative representation of the dc-dc buck-boost converter ...................... 13 Figure 8 Dc-dc ac-link buck-boost converter: configuration, behavior...

  16. The Generalized Switched Accounting or Conduction

    E-Print Network [OSTI]

    The Generalized Switched Accounting or Conduction Isaac Zafrany1 1 Technical Support Avant modeling and simulation of PWM converters was extended to include conduction losses. The method covers losses due to the inductor's resistance and due to the voltage drops across the switch and the diode

  17. Proceedings of the seventh international conference on high voltage electron microscopy

    SciTech Connect (OSTI)

    Fisher, R.M.; Gronsky, R.; Westmacott, K.H. (eds.)

    1983-01-01T23:59:59.000Z

    Eight-four papers are arranged under the following headings: high resolution, techniques and instrumentation, radiation effects, in-situ and phase transformations, minerals and ceramics, and semiconductors and thin films. Twenty-three papers were abstracted separately for the data base; three of the remainder had previously been abstracted. (DLC)

  18. Peak Power Bi-directional Transfer From High Speed Flywheel to Electrical Regulated Bus Voltage System

    E-Print Network [OSTI]

    Szabados, Barna

    life cycle. A reduced life cycle will translate into high maintenance costs since the batteries have devices capable of a minimum power of 400 W/kg, energy of 200 Wh/kg, a life cycle of 2500 at a cost vehicle during both acceleration and regenerative braking. The life cycle of the electric vehicle

  19. Epidemiologic study of Holstein dairy cow performance and reproduction near a high-voltage direct - current powerline

    SciTech Connect (OSTI)

    Martin, F.B.; Bender, A.; Steuernagel, G.; Robinson, R.A.; Revsbech, R.; Sorensen, D.K.; Williamson, N.; Williams, A.

    1986-01-01T23:59:59.000Z

    The development and operation of a high-voltage direct-current (HVDC) transmission line in rural Minnesota generated public concern over potential adverse effects to nearby residents and their livestock. Electrical parameters near an HVDC line decline rapidly with distance, but effects on ambient space charge have been detected out to 1 mile. To identify potential adverse effects of HVDC line operation on livestock, case-control and cohort study methods were used to examine various indices of Holstein performance in relation to distance from the line and the onset of line operation. It was believed that these indices would reflect changes in physiologic function or overt health effects that might arise from the HVDC environment. High-quality performance data from existing Dairy Herd Improvement Association (DHIA) records were obtained for 97% of qualifying herds located within 10 miles of the line. The large number of animals and years of observation provided high statistical power to detect even small systematic changes in performance. No significant differences in milk production or reproductive capacity were associated with presumed exposure to the HVDC environment. The absence of measurable effects in a large sentinel animal population may have implications for the assessment of human health risks related to HVDC transmission lines.

  20. Development of a High-Speed Static Switch for Distributed Energy and Microgrid Applications

    SciTech Connect (OSTI)

    Kroposki, B.; Pink, C.; Lynch, J.; John, V.; Meor Daniel, S.; Benedict, E.; Vihinen, I.

    2007-01-01T23:59:59.000Z

    Distributed energy resources can provide power to local loads in the electric distribution system and benefits such as improved reliability. Microgrids are intentional islands formed at a facility or in an electrical distribution system that contains at least one distributed resource and associated loads. Microgrids that operate both electrical generation and loads in a coordinated manner can offer additional benefits to the customer and local utility. The loads and energy sources can be disconnected from and reconnected to the area or local utility with minimal disruption to the local loads, thereby improving reliability. This paper details the development and testing of a highspeed static switch for distributed energy and microgrid applications.

  1. Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions

    E-Print Network [OSTI]

    Seo, Kwang Seok

    , such as current collapse (power slump), the self-heating effect and the power scaling problem. In this paper, we have studied the self-heating effect using pulsed current-voltage (IV) and current- voltage self-heating affects the AlGaN/GaN HEMT's operation. It can be thought that a reason for the power

  2. IP SwitchingIP Switching and Label Switchingand Label Switching

    E-Print Network [OSTI]

    Jain, Raj

    Raj Jain 1 IP SwitchingIP Switching and Label Switchingand Label Switching Raj Jain Professor Switching vs routing q IP Switching (Ipsilon) q Tag Switching (CISCO) q Multi-protocol label switching a tag. Exit router strips it off. H R R R H H HUntagged Packet Tagged packet #12;Raj Jain 9 Tag

  3. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles | SciTech

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) EnvironmentalGyroSolé(tm) Harmonicbet WhenHiggsmiddlewareHigh-PressureOffice

  4. From: Laurie Smith To: Congestion Study Comments Subject: High Voltage Transmission Lines

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't YourTransport inEnergy0.pdf Flash2010-60.pdf2Jessi O"Bannon To:Kay Foreman To:KerynHigh

  5. Erected mirror optical switch

    DOE Patents [OSTI]

    Allen, James J.

    2005-06-07T23:59:59.000Z

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  6. A low-voltage zero-crossing-based delta-sigma analog-to-digital converter

    E-Print Network [OSTI]

    Guyton, Matthew C. (Matthew Christopher)

    2010-01-01T23:59:59.000Z

    A zero-crossing-based (ZCB) switched-capacitor technique is presented for operation under low power supply voltages without gate boosting. Voltage ramp generators maintain common-mode level at each integrator output. ...

  7. Infrared detection with high-{Tc} bolometers and response of Nb tunnel junctions to picosecond voltage pulses

    SciTech Connect (OSTI)

    Verghese, S.

    1993-05-01T23:59:59.000Z

    Oxide superconductors with high critical temperature {Tc} make sensitive thermometers for several types of infrared bolometers. The authors built composite bolometers with YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thermometers on sapphire substrates which have higher sensitivity than competing thermal detectors which operate at temperatures above 77 K. A 1 x 1 mm bolometer with gold black serving as the radiation absorber has useful sensitivity for wavelengths 20--100 {mu}m. A 3 x 3 mm bolometer with a bismuth film as the absorber operates from 20--100 {mu}m. High-{Tc} bolometers which are fabricated with micromachining techniques on membranes of Si or Si{sub 3}N{sub 4} have potential application to large-format arrays which are used for infrared imaging. A nonisothermal high-{Tc} bolometer can be fabricated on a membrane of yttria-stabilized zirconia (YSZ) which is in thermal contact with the heat sink along the perimeter of the membrane. A thermal analysis indicates that the YSZ membrane bolometer can have improved sensitivity compared to the sapphire bolometer for spectrometer applications. The quasiparticle tunneling current in a superconductor-insulator-superconductor (SIS) junction is highly nonlinear in the applied voltage. The authors have made the first measurement of the linear response of the quasiparticle current in a Nb/AlO{sub x}/Nb junction over a broad bandwidth from 75--200 GHz. Nonlinear measurements made with these pulses may provide information about the quasiparticle lifetime. Preliminary data from such measurements are presented.

  8. Voltage breakdown limits at a high material temperature for rapid pulse heating in a vacuum

    SciTech Connect (OSTI)

    Pincosy, P A; Speer, R

    1999-06-07T23:59:59.000Z

    The proposed Advanced Hydro Facility (AHF) is required to produce multi-pulse radiographs. Electron beam pulse machines with sub-microsecond repetition are not yet available to test the problem of electron beam propagation through the hydro-dynamically expanding plasma from the nearby previously heated target material. A proposed test scenario includes an ohmically heated small volume of target material simulating the electron beam heating, along with an actual electron beam pulse impinging on nearby target material. A pulse power heating circuit was tested to evaluate the limits of pulse heating a small volume of material to tens of kilo-joules per gram. The main pulse heating time (50 to 100 ns) was to simulate the electron beam heating of a converter target material. To avoid skin heating non-uniformity a longer time scale pulse of a few microseconds first heats the target material to a few thousand degrees near the liquid to vapor transition. Under this state the maximum electric field that the current carrying conductor can support is the important parameter for insuring that the 100 ns heating pulse can deposit sufficient power. A small pulse power system was built for tests of this limit. Under cold conditions the vacuum electric field hold-off limit has been quoted as high as many tens of kilovolts per centimeter. The tests for these experiments found that the vacuum electric field hold-off was limited to a few kilovolts per centimeter when the material approached melting temperatures. Therefore the proposed test scenario for AHF was not achievable.*

  9. IEEE International Conference on Power and Energy (PECon 08), December 1-3, 2008, Johor Baharu, Malaysia Variable High Frequency Voltage Source for an

    E-Print Network [OSTI]

    Hammerton, James

    , Malaysia Variable High Frequency Voltage Source for an Ohmic Heating Process A. Toudeshki, N. Mariun SMIEEE: arashtoudeshki@gmail.com Abstract-- Heating is an important step in food processing. A new method of heating uses the natural electrical resistance of the food to generate heat. In this method electrical energy

  10. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

    DOE Patents [OSTI]

    Kalinin, Sergei V. (Knoxville, TN); Baddorf, Arthur P. (Knoxville, TN); Lee, Ho Nyung (Oak Ridge, TN); Shin, Junsoo (Knoxville, TN); Gruverman, Alexei L. (Raleigh, NC); Karapetian, Edgar (Malden, MA); Kachanov, Mark (Arlington, MA)

    2007-11-06T23:59:59.000Z

    A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

  11. Voltage control in pulsed system by predict-ahead control

    DOE Patents [OSTI]

    Payne, A.N.; Watson, J.A.; Sampayan, S.E.

    1994-09-13T23:59:59.000Z

    A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load. 4 figs.

  12. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    SciTech Connect (OSTI)

    Hu, Long, E-mail: hulong-1226@126.com [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049 (China); Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China); Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China)

    2014-03-07T23:59:59.000Z

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2?kV is applied, after an exciting optical pulse with energy of 1??J arrival, the structure with thickness of 650??m reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (?4?kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ?4?kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed.

  13. Electronic logic for enhanced switch reliability

    DOE Patents [OSTI]

    Cooper, J.A.

    1984-01-20T23:59:59.000Z

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  14. Wind Power Plant Voltage Stability Evaluation: Preprint

    SciTech Connect (OSTI)

    Muljadi, E.; Zhang, Y. C.

    2014-09-01T23:59:59.000Z

    Voltage stability refers to the ability of a power system to maintain steady voltages at all buses in the system after being subjected to a disturbance from a given initial operating condition. Voltage stability depends on a power system's ability to maintain and/or restore equilibrium between load demand and supply. Instability that may result occurs in the form of a progressive fall or rise of voltages of some buses. Possible outcomes of voltage instability are the loss of load in an area or tripped transmission lines and other elements by their protective systems, which may lead to cascading outages. The loss of synchronism of some generators may result from these outages or from operating conditions that violate a synchronous generator's field current limit, or in the case of variable speed wind turbine generator, the current limits of power switches. This paper investigates the impact of wind power plants on power system voltage stability by using synchrophasor measurements.

  15. Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators

    SciTech Connect (OSTI)

    Cheng Xinbing; Liu Jinliang; Qian Baoliang; Zhang Yu; Zhang Hongbo [College of Photoelectrical Science and Engineering, National University of Defense Technology, Hunan 410073 (China)

    2009-11-15T23:59:59.000Z

    A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

  16. High Gain Transformerless DC-DC Converters for Renewable Energy Sources

    E-Print Network [OSTI]

    Denniston, Nicholas Aaron

    2011-08-08T23:59:59.000Z

    mode DCM Discontinuous conduction mode EAR Equivalent averaged resistance ESR Equivalent series resistance FC Fuel cell fS Switching frequency HVDC High voltage direct current ix, vx Instantaneous current, voltage of node x Ix, Vx Average....1. Introduction ................................................................................... 59 5.2. Design example and simulation .................................................... 62 5.3. Evaluation of multiple module approach in HVDC converters...

  17. Numerical simulations of output pulse extraction from a high-power microwave compressor with a plasma switch

    SciTech Connect (OSTI)

    Shlapakovski, Anatoli; Beilin, Leonid; Bliokh, Yuri; Donskoy, Moshe; Krasik, Yakov E. [Physics Department, Technion, Haifa 32000 (Israel); Hadas, Yoav [Department of Applied Physics, Rafael, PO Box 2250, Haifa 31021 (Israel); Schamiloglu, Edl [Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2014-05-07T23:59:59.000Z

    Numerical simulations of the process of electromagnetic energy release from a high-power microwave pulse compressor comprising a gas-filled cavity and interference switch were carried out. A microwave plasma discharge in a rectangular waveguide H-plane tee was modeled with the use of the fully electromagnetic particle-in-cell code MAGIC. The gas ionization, plasma evolution, and interaction with RF fields accumulated within the compressor were simulated using different approaches provided by the MAGIC code: particle-in-cell approach accounting for electron-neutral collisions, gas conductivity model based on the concept of mobility, and hybrid modeling. The dependences of the microwave output pulse peak power and waveform on parameters that can be controlled in experiments, such as an external ionization rate, RF field amplitude, and background gas pressure, were investigated.

  18. Dual-mode ion switching conducting polymer films as high energy supercapacitor materials

    SciTech Connect (OSTI)

    Naoi, Katsuhiko; Oura, Yasushi [Tokyo Univ. of Agriculture and Technology, Koganei, Tokyo (Japan). Dept. of Applied Chemistry

    1995-12-31T23:59:59.000Z

    The electropolymerized polypyrrole films formed from micellar solution of anionic surfactants, viz., Dodecylbenzene sulfonate (DBS), showed potential-dependent anion and cation ion switching behavior and the peculiar columnar structure. The formation process and the redox of the polypyrrole was studied with the in situ atomic force microscopy (AFM) and electrochemical quartz crystal microbalance (EQCM) methods. In-situ AFM observation clearly indicated that such a columnar structure started to form around critical charge densities of 60--100 mC cm{sup {minus}2}. The cyclic voltammogram for the PPy doped with DBS{sup {minus}} film showed two redox couples, each of which corresponds to a cation and an anion exchange process. Thus, the film behaves as a dual-mode ion doping/undoping exchanger. As the PPy film was prepared in higher concentration of the surfactant dopant, where the micelles are formed in solution, the resulting film showed a considerably higher (ca. three orders of magnitude) diffusion coefficient compared to ordinary PPy films so far reported. Such an enhanced diffusivity of ions could be attributed to a peculiar structure of the polymer formed. The feasibility of such polypyrrole in use of supercapacitor material was discussed.

  19. Apparatus for producing voltage and current pulses

    DOE Patents [OSTI]

    Kirbie, Hugh (Los Alamos, NM); Dale, Gregory E. (Los Alamos, NM)

    2010-12-21T23:59:59.000Z

    An apparatus having one or more modular stages for producing voltage and current pulses. Each module includes a diode charging means to charge a capacitive means that stores energy. One or more charging impedance means are connected to the diode charging means to provide a return current pathway. A solid-state switch discharge means, with current interruption capability, is connected to the capacitive means to discharge stored energy. Finally, a control means is provided to command the switching action of the solid-state switch discharge means.

  20. Statistical analysis of the dynamics of secondary electrons in the flare of a high-voltage beam-type discharge

    SciTech Connect (OSTI)

    Demkin, V. P.; Mel'nichuk, S. V. [National Research Tomsk State University, 36, Lenin Ave., 634050 Tomsk (Russian Federation)

    2014-09-15T23:59:59.000Z

    In the present work, results of investigations into the dynamics of secondary electrons with helium atoms in the presence of the reverse electric field arising in the flare of a high-voltage pulsed beam-type discharge and leading to degradation of the primary electron beam are presented. The electric field in the discharge of this type at moderate pressures can reach several hundred V/cm and leads to considerable changes in the kinetics of secondary electrons created in the process of propagation of the electron beam generated in the accelerating gap with a grid anode. Moving in the accelerating electric field toward the anode, secondary electrons create the so-called compensating current to the anode. The character of electron motion and the compensating current itself are determined by the ratio of the field strength to the concentration of atoms (E/n). The energy and angular spectra of secondary electrons are calculated by the Monte Carlo method for different ratios E/n of the electric field strength to the helium atom concentration. The motion of secondary electrons with threshold energy is studied for inelastic collisions of helium atoms and differential analysis is carried out of the collisional processes causing energy losses of electrons in helium for different E/n values. The mechanism of creation and accumulation of slow electrons as a result of inelastic collisions of secondary electrons with helium atoms and selective population of metastable states of helium atoms is considered. It is demonstrated that in a wide range of E/n values the motion of secondary electrons in the beam-type discharge flare has the character of drift. At E/n values characteristic for the discharge of the given type, the drift velocity of these electrons is calculated and compared with the available experimental data.

  1. Hybrid high direct current circuit interrupter

    DOE Patents [OSTI]

    Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

    1998-08-11T23:59:59.000Z

    A device and a method are disclosed for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens. 7 figs.

  2. Hybrid high direct current circuit interrupter

    SciTech Connect (OSTI)

    Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

    1996-12-31T23:59:59.000Z

    A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

  3. Effects of High-Altitude Electromagnetic Pulse (HEMP) on the Northern Telecom Inc. DMS-100 (trademark) switch. Volume 2. Test program. Final report

    SciTech Connect (OSTI)

    Not Available

    1988-09-01T23:59:59.000Z

    This report is part of a three volume set that presents the results of simulated High-Altitude Electromagnetic Pulse (HEMP) testing of a DMS-100 Switching System. This volume is a detailed description of the test procedures, test results, and the mitigation alternatives evaluated. This volume also presents a discussion of the conclusion and recommendations of the program.

  4. Effects of High-Altitude Electromagnetic Pulse (HEMP) on the Northern Telecom Inc. DMS-100 (trademark) switch. Volume 3. Data analysis. Final report

    SciTech Connect (OSTI)

    Not Available

    1988-09-01T23:59:59.000Z

    This report is part of a three volume set that presents the results of simulated High-Altitude Electromagnetic Pulse (HEMP) testing of a DMS-100 Switching System. This volume describes the post test analysis of the measured electromagnetic fields and induced transients. This volume also includes a comparison of the characteristic attributes of the various simulator environments.

  5. A Multiphase, Modular, Bidirectional, Triple-Voltage DC-DC Converter Power Systems

    SciTech Connect (OSTI)

    Su, Gui-Jia [ORNL; Tang, Lixin [ORNL

    2008-01-01T23:59:59.000Z

    Electrical power systems in future hybrid and fuel cell vehicles may employ three voltage [14 V, 42 V, and high voltage (HV)] nets. These will be necessary to accommodate existing 14-V loads as well as efficiently handle new heavy loads at the 42-V net and a traction drive on the HV bus. A low-cost DC-DC converter was proposed for connecting the three voltage nets. It minimizes the number of switches and their associated gate driver components by using two half-bridges and a high-frequency transformer. Another salient feature is that the half bridge on the 42-V bus is also utilized to provide the 14-V bus by operating at duty ratios around an atypical value of 1/3. Moreover, it makes use of the parasitic capacitance of the switches and the transformer leakage inductance for soft switching. The use of half bridges makes the topology well suited for interleaved multiphase modular configurations as a means to increase the power level because the capacitor legs can be shared. This paper presents simulation and experimental results on an interleaved two-phase arrangement rated at 4.5 kW. Also discussed are the benefits of operating with an atypical duty ratio on the transformer and a preferred multiphase configuration to minimize capacitor ripple currents.

  6. A Design-Oriented Framework to Determine the Parasitic Parameters of High Frequency Magnetics in Switching Power Supplies using Finite Element Analysis Techniques

    E-Print Network [OSTI]

    Shadmand, Mohammad

    2012-07-16T23:59:59.000Z

    A DESIGN-ORIENTED FRAMEWORK TO DETERMINE THE PARASITIC PARAMETERS OF HIGH FREQUENCY MAGNETICS IN SWITCING POWER SUPPLIES USING FINITE ELEMENT ANALYSIS TECHNIQUES A Thesis by MOHAMMAD BAGHER SHADMAND Submitted to the Office... to Determine the Parasitic Parameters of High Frequency Magnetics in Switching Power Supplies using Finite Element Analysis Techniques Copyright 2012 Mohammad Bagher Shadmand A DESIGN-ORIENTED FRAMEWORK TO DETERMINE THE PARASITIC PARAMETERS OF HIGH...

  7. High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch.

    SciTech Connect (OSTI)

    Baker, Michael Sean; Pohl, Kenneth Roy

    2005-10-01T23:59:59.000Z

    Two different Sandia MEMS devices have been tested in a high-g environment to determine their performance and survivability. The first test was performed using a drop-table to produce a peak acceleration load of 1792 g's over a period of 1.5 ms. For the second test the MEMS devices were assembled in a gun-fired penetrator and shot into a cement target at the Army Waterways Experiment Station in Vicksburg Mississippi. This test resulted in a peak acceleration of 7191 g's for a duration of 5.5 ms. The MEMS devices were instrumented using the MEMS Diagnostic Extraction System (MDES), which is capable of driving the devices and recording the device output data during the high-g event, providing in-flight data to assess the device performance. A total of six devices were monitored during the experiments, four mechanical non-volatile memory devices (MNVM) and two Silicon Reentry Switches (SiRES). All six devices functioned properly before, during, and after each high-g test without a single failure. This is the first known test under flight conditions of an active, powered MEMS device at Sandia.

  8. 3430 IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY, VOL. 61, NO. 8, OCTOBER 2012 Experimental Validation of High-Voltage-Ratio

    E-Print Network [OSTI]

    Simões, Marcelo Godoy

    -voltage current-source like device that produces electricity and heat directly from input hydrogen and oxygen carbon dioxide emissions under the assumption that the hydrogen can be produced from renewable-energy sources such as photovoltaic and wind energy or as a subprod- uct of currently wasted energy of large

  9. Corona and Motor Voltage Interim Report

    SciTech Connect (OSTI)

    Hsu, J.S.

    2005-05-06T23:59:59.000Z

    It has been suggested that to meet the FreedomCAR objectives for cost, size, weight, efficiency, and reliability higher buss voltages be utilized in HEV and FC automotive applications. The reasoning is that since electric power is equal to the product of voltage and current for a given power a higher voltage and lower current would result in smaller cable and inverter switching components. Consequently, the system can be lighter and smaller. On the other hand, higher voltages are known to require better and thicker electrical insulation that reduce the available slot area for motor windings. One cause of slow insulation breakdown is corona that gradually erodes the insulation and shortens the life expectancy of the motor. This study reports on the results of a study on corona initiating voltages for mush-wound and bobbin-wound stators. A unique testing method is illustrated.

  10. Voltage balanced multilevel voltage source converter system

    DOE Patents [OSTI]

    Peng, F.Z.; Lai, J.S.

    1997-07-01T23:59:59.000Z

    Disclosed is a voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means. 15 figs.

  11. Operator Performance in Long Duration Control Operations: Switching from Low to High Task Load

    E-Print Network [OSTI]

    Thornburg, K. M.

    Long duration, low task load environments are typical for nuclear power plant control rooms, where operators, after hours of operating under a low task load situation, may have to shift to a high task load situation. The ...

  12. A transistor-only power-efficient high-frequency voltage-mode stimulator for a multichannel system

    E-Print Network [OSTI]

    Serdijn, Wouter A.

    to that of traditional stimulation. The system has a voltage-mode output and therefore safety aspects such as charge operation. dl CRs CCel el S S S 1 2 3 4 S (a) System with parasitics 0 50 100 150 200 250 300 350 -5 -4 -3 is controlled. The simplest model for the tissue is an RC series circuit. In this model the capacitance Cdl

  13. A Low Latency Optical Switch for High Performance Computing with Minimized Processor Energy Load

    E-Print Network [OSTI]

    Liu, Shiyun; Cheng, Qixiang; Madarbux, Muhammad Ridwan; Wonfor, Adrian; Penty, Richard V.; White, Ian H.; Watts, Philip M.

    2015-03-01T23:59:59.000Z

    ion, CMP power densi ty and thermal management issues are ser iously l imit ing processor per formance [2]. High per formance server chips require >1Tb/s of off-chip bandwidth including Ethernet , PCI , main memory and coherence l inks which... with the 120W total processor power envelope. By compar ison, the processor chip power dissipat ion of our archi tecture (at 30% load) is 0.5 mW/(Gb/s), consuming only 0.23W for the same coherence bandwidth. Such compar isons are di fficul...

  14. Microfabricated triggered vacuum switch

    DOE Patents [OSTI]

    Roesler, Alexander W. (Tijeras, NM); Schare, Joshua M. (Albuquerque, NM); Bunch, Kyle (Albuquerque, NM)

    2010-05-11T23:59:59.000Z

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  15. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 Abstract--In high current, high voltage, high temperature

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    and high current applications, such as HVDC transmission [1] or pulsed power application [2], a thyristor

  16. Optical switch

    DOE Patents [OSTI]

    Reedy, R.P.

    1987-11-10T23:59:59.000Z

    An optical switching device is provided whereby light from a first glass fiber or a second glass fiber may be selectively transmitted into a third glass fiber. Each glass fiber is provided with a focusing and collimating lens system. In one mode of operation, light from the first glass fiber is reflected by a planar mirror into the third glass fiber. In another mode of operation, light from the second glass fiber passes directly into the third glass fiber. The planar mirror is attached to a rotatable table which is rotated to provide the optical switching. 3 figs.

  17. Analysis of Instruction-level Vulnerability to Dynamic Voltage and Temperature Variations

    E-Print Network [OSTI]

    Gupta, Rajesh

    and supply voltage droops [2]. Static process variations can sometimes be mitigated through binning of dynamic variation from environmental and workload changes include supply voltage droops and temperature changes. Voltage droops result from abrupt changes in the switching activity, inducing large current

  18. Switching it up | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Switching it up Switching it up Released: March 23, 2015 Mapping redox switches in cyanobacteria advances use as biofuel Scientist mapped more than 2,100 sites that may switch...

  19. Efficient tunable switch from slow light to fast light in quantum opto-electromechanical system

    E-Print Network [OSTI]

    M. Javed Akram; Khalid Naseer; Farhan Saif

    2015-03-05T23:59:59.000Z

    The control of slow and fast light propagation, in the probe transmission in a single experiment, is a challenging task. This type of control can only be achieved through highly nonlinear interactions and additional interfering pathway(s), which is therefore seldom reported. Here, we devise a scheme in which slow light, and a tunable switch from slow light to fast light can be achieved in the probe transmission based on a hybrid setup, which is composed of an optical cavity with two charged nano mechanical resonators (MRs). The two MRs are electrostatically coupled via tunable Coulomb coupling strength ($g_{c}$) making a quantum opto-electromechanical system (QOEMS). The parameter $g_{c}$ that couples the two MRs can be switched on and off by controlling the bias voltages on the MRs, and acts as a tunable switch that allows the propagation of transmitted probe field as slow light ($g_{c} \

  20. CIGRE WG 13.06 studies on the reliability of single pressure SF6-gas high-voltage circuit-breakers

    SciTech Connect (OSTI)

    Janssen, A.L.J. [KEMA, Arnhem (Netherlands)] [KEMA, Arnhem (Netherlands); Brunke, J.H.; Heising, C.R.; Lanz, W.

    1996-01-01T23:59:59.000Z

    The final results of the CIGRE second international inquiry on the reliability of high voltage circuit-breakers in service are presented. In the seventies the first international inquiry, that covered all technology circuit-breakers, was conducted. The second international inquiry was limited to single pressure SF6 gas circuit-breakers, thus showing the improvements due to this technology. The main conclusion is that the reliability concerning Major Failures has increased considerably and that the maintainability of modern SF6 circuit-breakers is much better than the older technology circuit-breakers. Also the conclusions from several other studies, based on the results of the inquiries, are presented.

  1. LASER TRIGGERED GAS SWITCHES UTILIZING BEAM TRANSPORT THROUGH 1 MO-cm DEIONIZED WATER.

    SciTech Connect (OSTI)

    Woodworth, Joseph Ray; Lehr, Jane [Sandia National Laboratories, Albuquerque, NM; Blickem, James R.; Wallace, Zachariah R.; Anaya, Victor Jr; Corley, John P; Lott, John; Hodge, Keith; Zameroski, Nathan D. [Sandia National Laboratories, Albuquerque, NM

    2005-11-01T23:59:59.000Z

    We report on the successful attempts to trigger high voltage pressurized gas switches by utilizing beam transport through 1 MO-cm deionized water. The wavelength of the laser radiation was 532 nm. We have investigated Nd: YAG laser triggering of a 6 MV, SF6 insulated gas switch for a range of laser and switch parameters. Laser wavelength of 532 nm with nominal pulse lengths of 10 ns full width half maximum (FWHM) were used to trigger the switch. The laser beam was transported through 67 cm-long cell of 1 MO-cm deionized water constructed with anti reflection UV grade fused silica windows. The laser beam was then focused to form a breakdown arc in the gas between switch electrodes. Less than 10 ns jitter in the operation of the switch was obtained for laser pulse energies of between 80-110 mJ. Breakdown arcs more than 35 mm-long were produced by using a 70 cm focusing optic.

  2. A 93% efficiency reconfigurable switched-capacitor DC-DC converter using on-chip ferroelectric capacitors

    E-Print Network [OSTI]

    El-Damak, Dina Reda

    Dynamic Voltage Scaling (DVS) has become one of the standard techniques for energy efficient operation of systems by powering circuit blocks at the minimum voltage that meets the desired performance [1]. Switched Capacitor ...

  3. Novel Hybrid Materials with High Stability for Electrically Switched Ion Exchange: Carbon Nanotubes/Polyaniline/Nickel Hexacyanoferrate Nanocomposites

    SciTech Connect (OSTI)

    Lin, Yuehe; Cui, Xiaoli

    2005-04-21T23:59:59.000Z

    A novel and stable carbon nanotubes /polyaniline /nickel hexacyanoferrates composite film has been synthesized with electrodeposition method, and the possibility for removing cesium through an electrically switched ion exchange has been evaluated in a mixture containing NaNO3 and CsNO3.

  4. Fundamental science investigations to develop a 6-MV laser triggered gas switch for ZR: first annual report.

    SciTech Connect (OSTI)

    Warne, Larry Kevin; Van Den Avyle, James A.; Lehr, Jane Marie; Rose, David (Voss Scientific, Albuquerque, NM); Krompholz, Hermann G. (Texas Tech University, Lubbock, TX); Vela, Russell (Texas Tech University, Lubbock, TX); Jorgenson, Roy Eberhardt; Timoshkin, Igor (University of Strathclyde, Glasgow, Scotland); Woodworth, Joseph Ray; Prestwich, Kenneth Randel (Voss Scientific, Albuquerque, NM); Krile, John (Texas Tech University, Lubbock, TX); Given, Martin (University of Strathclyde, Glasgow, Scotland); McKee, G. Randall; Rosenthal, Stephen Edgar; Struve, Kenneth William; Welch, Dale Robert (Voss Scientific, Albuquerque, NM); Benwell, Andrew L. (University of Missouri-Columbia, Columbia, Missouri); Kovaleski, Scott (University of Missouri-Columbia, Columbia, Missouri); LeChien, Keith, R.; Johnson, David (Titan Pulse Sciences Division); Fouracre, R.A. (University of Strathclyde, Glasgow, Scotland); Yeckel, Chris (University of Missouri-Columbia, Columbia, Missouri); Wakeland, Peter Eric (Ktech Corporation, Albuquerque, NM); Miller, A. R. (Titan Pulse Sciences Division); Hodge, Keith Conquest (Ktech Corporation, Albuquerque, NM); Pasik, Michael Francis; Savage, Mark Edward; Maenchen, John Eric; Curry, Randy D. (University of Missouri-Columbia, Columbia, Missouri); Feltz, Greg (Ktech Corporation, Albuquerque, NM); Bliss, David Emery; MacGregor, Scott (University of Strathclyde, Glasgow, Scotland); Corley, J. P. (Ktech Corporation, Albuquerque, NM); Anaya, Victor (Ktech Corporation, Albuquerque, NM); Wallace, Zachariah (Ktech Corporation, Albuquerque, NM); Thoma, Carsten (Voss Scientific, Albuquerque, NM); Neuber, Andreas. (Texas Tech University, Lubbock, TX)

    2007-03-01T23:59:59.000Z

    In October 2005, an intensive three-year Laser Triggered Gas Switch (LTGS) development program was initiated to investigate and solve observed performance and reliability issues with the LTGS for ZR. The approach taken has been one of mission-focused research: to revisit and reassess the design, to establish a fundamental understanding of LTGS operation and failure modes, and to test evolving operational hypotheses. This effort is aimed toward deploying an initial switch for ZR in 2007, on supporting rolling upgrades to ZR as the technology can be developed, and to prepare with scientific understanding for the even higher voltage switches anticipated needed for future high-yield accelerators. The ZR LTGS was identified as a potential area of concern quite early, but since initial assessments performed on a simplified Switch Test Bed (STB) at 5 MV showed 300-shot lifetimes on multiple switch builds, this component was judged acceptable. When the Z{sub 20} engineering module was brought online in October 2003 frequent flashovers of the plastic switch envelope were observed at the increased stresses required to compensate for the programmatically increased ZR load inductance. As of October 2006, there have been 1423 Z{sub 20} shots assessing a variety of LTGS designs. Numerous incremental and fundamental switch design modifications have been investigated. As we continue to investigate the LTGS, the basic science of plastic surface tracking, laser triggering, cascade breakdown, and optics degradation remain high-priority mission-focused research topics. Significant progress has been made and, while the switch does not yet achieve design requirements, we are on the path to develop successively better switches for rolling upgrade improvements to ZR. This report summarizes the work performed in FY 2006 by the large team. A high-level summary is followed by detailed individual topical reports.

  5. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Energy Savers [EERE]

    Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses Presentation from the U.S. DOE Office of...

  6. Miniaturized, low-voltage power converters with fast dynamic response

    E-Print Network [OSTI]

    Giuliano, David (David Michael)

    2013-01-01T23:59:59.000Z

    This thesis introduces a two-stage architecture that combines the strengths of switched capacitor (SC) techniques (small size, light-load performance) with the high efficiency and regulation capability of switch-mode power ...

  7. Strategies for Voltage Control and Transient Stability Assessment

    SciTech Connect (OSTI)

    Hiskens, Ian A.

    2013-09-25T23:59:59.000Z

    As wind generation grows, its influence on power system performance will becoming increasingly noticeable. Wind generation di#11;ffers from traditional forms of generation in numerous ways though, motivating the need to reconsider the usual approaches to power system assessment and performance enhancement. The project has investigated the impact of wind generation on transient stability and voltage control, identifying and addressing issues at three distinct levels of the power system: 1) at the device level, the physical characteristics of wind turbine generators (WTGs) are quite unlike those of synchronous machines, 2) at the wind-farm level, the provision of reactive support is achieved through coordination of numerous dissimilar devices, rather than straightforward generator control, and 3) from a systems perspective, the location of wind-farms on the sub-transmission network, coupled with the variability inherent in their power output, can cause complex voltage control issues. The project has sought to develop a thorough understanding of the dynamic behaviour of type-3 WTGs, and in particular the WECC generic model. The behaviour of such models is governed by interactions between the continuous dynamics of state variables and discrete events associated with limits. It was shown that these interactions can be quite complex, and may lead to switching deadlock that prevents continuation of the trajectory. Switching hysteresis was proposed for eliminating deadlock situations. Various type-3 WTG models include control blocks that duplicate integrators. It was shown that this leads to non-uniqueness in the conditions governing steady-state, and may result in pre- and post-disturbance equilibria not coinciding. It also gives rise to a zero eigenvalue in the linearized WTG model. In order to eliminate the anomalous behaviour revealed through this investigation, WECC has now released a new generic model for type-3 WTGs. Wind-farms typically incorporate a variety of voltage control equipment including tapchanging transformers, switched capacitors, SVCs, STATCOMs and the WTGs themselves. The project has considered the coordinated control of this equipment, and has addressed a range of issues that arise in wind-farm operation. The #12;first concerns the ability of WTGs to meet reactive power requirements when voltage saturation in the collector network restricts the reactive power availability of individual generators. Secondly, dynamic interactions between voltage regulating devices have been investigated. It was found that under certain realistic conditions, tap-changing transformers may exhibit instability. In order to meet cost, maintenance, fault tolerance and other requirements, it is desirable for voltage control equipment to be treated as an integrated system rather than as independent devices. The resulting high-level scheduling of wind-farm reactive support has been investigated. In addressing this control problem, several forms of future information were considered, including exact future knowledge and stochastic predictions. Deterministic and Stochastic Dynamic Programming techniques were used in the development of control algorithms. The results demonstrated that while exact future knowledge is very useful, simple prediction methods yield little bene#12;fit. The integration of inherently variable wind generation into weak grids, particularly subtransmission networks that are characterized by low X=R ratios, aff#11;ects bus voltages, regulating devices and line flows. The meshed structure of these networks adds to the complexity, especially when wind generation is distributed across multiple nodes. A range of techniques have been considered for analyzing the impact of wind variability on weak grids. Sensitivity analysis, based on the power-flow Jacobian, was used to highlight sections of a system that are most severely a#11;ffected by wind-power variations. A continuation power flow was used to determine parameter changes that reduce the impact of wind-power variability. It was also used to explore interactions betw

  8. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, Dario B. (DeSoto, TX)

    1994-01-01T23:59:59.000Z

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination.

  9. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, D.B.

    1994-07-19T23:59:59.000Z

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination. 9 figs.

  10. Section IV.D.3 for DOE 2013 Annual Report: Novel Phosphazene-based Compounds to Enhance Safety and Stability of Cell Chemistries for High Voltage Applications (INL)

    SciTech Connect (OSTI)

    Kevin L. Gering; Mason K. Harrup; Eric J. Dufek; Sergiy V. Sazhin; Harry W. Rollins; David K. Jamison; Fred F. Stewart; John Burba

    2013-09-01T23:59:59.000Z

    Electrolytes play a central role in performance and aging in most electrochemical systems. As automotive and grid applications place a higher reliance on electrochemical stored energy, it becomes more urgent to have electrolyte components that enable optimal battery performance while promoting battery safety and longevity. Safety remains a foremost concern for widespread utilization of Li-ion technology in electric-drive vehicles, especially as the focus turns to higher voltage systems (5V). This work capitalizes on the long established INL expertise regarding phosphazene chemistry, aimed at battery-viable compounds for electrolytes and electrodes that are highly tolerant to abusive conditions. This report showcases our 2013 work for the DOE applied battery research (ABR) program, wherein testing results are summarized for INL electrolytes and alternative anode materials.

  11. Charging a Battery-Powered Device with a Fiber-Optically Connected Photonic Power System for Achieving High-Voltage Isolation

    SciTech Connect (OSTI)

    Lizon, David C [Los Alamos National Laboratory; Gioria, Jack G [Los Alamos National Laboratory; Dale, Gregory E [Los Alamos National Laboratory; Snyder, Hans R [Los Alamos National Laboratory

    2008-01-01T23:59:59.000Z

    This paper describes the development and testing of a system to provide isolated power to the cathode-subsystem electronics of an x-ray tube. These components are located at the cathode potential of several hundred kilovolts, requiring a supply of power isolated from this high voltage. In this design a fiber-optically connected photonic power system (PPS) is used to recharge a lithium-ion battery pack, which will subsequently supply power to the cathode-subsystem electronics. The suitability of the commercially available JDSU PPS for this application is evaluated. The output of the ppe converter is characterized. The technical aspects of its use for charging a variety of Li-Ion batteries are discussed. Battery charge protection requirements and safety concerns are also addressed.

  12. Measurement of the internal stress and electric field in a resonating piezoelectric transformer for high-voltage applications using the electro-optic and photoelastic effects

    SciTech Connect (OSTI)

    VanGordon, James A.; Kovaleski, Scott D., E-mail: kovaleskis@missouri.edu; Norgard, Peter; Gall, Brady B. [Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211 (United States)] [Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Dale, Gregory E. [High Power Electrodynamics Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [High Power Electrodynamics Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2014-02-15T23:59:59.000Z

    The high output voltages from piezoelectric transformers are currently being used to accelerate charged particle beams for x-ray and neutron production. Traditional methods of characterizing piezoelectric transformers (PTs) using electrical probes can decrease the voltage transformation ratio of the device due to the introduction of load impedances on the order of hundreds of kiloohms to hundreds of megaohms. Consequently, an optical diagnostic was developed that used the photoelastic and electro-optic effects present in piezoelectric materials that are transparent to a given optical wavelength to determine the internal stress and electric field. The combined effects of the piezoelectric, photoelastic, and electro-optic effects result in a time-dependent change the refractive indices of the material and produce an artificially induced, time-dependent birefringence in the piezoelectric material. This induced time-dependent birefringence results in a change in the relative phase difference between the ordinary and extraordinary wave components of a helium-neon laser beam. The change in phase difference between the wave components was measured using a set of linear polarizers. The measured change in phase difference was used to calculate the stress and electric field based on the nonlinear optical properties, the piezoelectric constitutive equations, and the boundary conditions of the PT. Maximum stresses of approximately 10 MPa and electric fields of as high as 6 kV/cm were measured with the optical diagnostic. Measured results were compared to results from both a simple one-dimensional (1D) model of the piezoelectric transformer and a three-dimensional (3D) finite element model. Measured stresses and electric fields along the length of an operating length-extensional PT for two different electrical loads were within at least 50 % of 3D finite element simulated results. Additionally, the 3D finite element results were more accurate than the results from the 1D model for a wider range of electrical load impedances under test.

  13. A magnetically switched kicker for proton extraction

    SciTech Connect (OSTI)

    Dinkel, J.; Biggs, J.

    1989-03-01T23:59:59.000Z

    The application of magnetic current amplification and switching techniques to the generation of precise high current pulses for switching magnets is described. The square loop characteristic of Metglas tape wound cores at high excitation levels provides excellent switching characteristics for microsecond pulses. The rugged and passive nature of this type pulser makes it possible to locate the final stages of amplification at the load for maximum efficiency. 12 refs., 8 figs.

  14. Infrared detection with high-[Tc] bolometers and response of Nb tunnel junctions to picosecond voltage pulses

    SciTech Connect (OSTI)

    Verghese, S.

    1993-05-01T23:59:59.000Z

    Oxide superconductors with high critical temperature [Tc] make sensitive thermometers for several types of infrared bolometers. The authors built composite bolometers with YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta

  15. Ultrafast gas switching experiments

    SciTech Connect (OSTI)

    Frost, C.A.; Martin, T.H.; Patterson, P.E.; Rinehart, L.F.; Rohwein, G.J.; Roose, L.D.; Aurand, J.F.; Buttram, M.T.

    1996-11-01T23:59:59.000Z

    We describe recent experiments which studied the physics of ultrafast gas breakdown under the extreme overvoltages which occur when a high pressure gas switch is pulse charged to hundreds of kV in 1 ns or less. The highly overvolted peaking gaps produce powerful electromagnetic pulses with risetimes < 100 ps which can be used for ultrawideband radar systems, particle accelerators, laser drivers, bioelectromagnetic studies, electromagnetic effects testing, and for basic studies of gas breakdown physics. We have produced and accurately measured pulses with 50 to 100 ps risetimes to peak levels of 75 to 160 kV at pulse repetition frequencies (PRF) to I kHz. A unique gas switch was developed to hold off hundreds of kV with parasitic inductance less than I nH. An advanced diagnostic system using Fourier compensation was developed to measure single-shot risetimes below 35 ps. The complete apparatus is described and wave forms are presented. The measured data are compared with a theoretical model which predicts key features including dependence on gas species and pressure. We have applied this technology to practical systems driving ultrawideband radiating antennas and bounded wave simulators. For example, we have developed a thyristor/pulse transformer based system using a highly overvolted cable switch. This pulser driving a Sandia- designed TEM cell, provides an ultra wideband impulse with < 200 ps risetime to the test object at a PRF > 1 kHz at > 100 kV/m E field.

  16. Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages

    DOE Patents [OSTI]

    Su, Gui-Jia [Knoxville, TN

    2005-11-29T23:59:59.000Z

    A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

  17. PAPER ACCEPTED TO IEEE TRANSACTIONS ON POWER SYSTEMS, Nov. 2008 1 Reactive Power and Voltage Control in Distribution

    E-Print Network [OSTI]

    Cañizares, Claudio A.

    PAPER ACCEPTED TO IEEE TRANSACTIONS ON POWER SYSTEMS, Nov. 2008 1 Reactive Power and Voltage) problem associated with reactive power and voltage control in distribution systems to minimize daily--Distribution systems, reactive power control, voltage control, optimal switching operations, mixed integer nonlinear

  18. Effect of AlPO4-Nanoparticle Coating Concentration on High-Cutoff-Voltage Electrochemical Performances in

    E-Print Network [OSTI]

    Cho, Jaephil

    , * a School of Materials Science and Engineering and Research Center for Energy Conversion and Storage, Seoul National University, Seoul, Korea b Department of Applied Chemistry, Kumoh National Institute of Technology material has been used in most com- mercial Li-ion cells due to its high energy density and good electro

  19. Effect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    power and high frequency applications. Si is an attractive substrate for GaN HEMTs because of its lower and thermal mismatch between GaN and Si as compared to the more commonly used substrate, SiC, results in more regardless of the characteristics of the substrate. II. EXPERIMENTAL We studied experimental AlxGa1­xN/GaN

  20. Wide-range voltage modulation

    SciTech Connect (OSTI)

    Rust, K.R.; Wilson, J.M.

    1992-06-01T23:59:59.000Z

    The Superconducting Super Collider`s Medium Energy Booster Abort (MEBA) kicker modulator will supply a current pulse to the abort magnets which deflect the proton beam from the MEB ring into a designated beam stop. The abort kicker will be used extensively during testing of the Low Energy Booster (LEB) and the MEB rings. When the Collider is in full operation, the MEBA kicker modulator will abort the MEB beam in the event of a malfunction during the filling process. The modulator must generate a 14-{mu}s wide pulse with a rise time of less than 1 {mu}s, including the delay and jitter times. It must also be able to deliver a current pulse to the magnet proportional to the beam energy at any time during ramp-up of the accelerator. Tracking the beam energy, which increases from 12 GeV at injection to 200 GeV at extraction, requires the modulator to operate over a wide range of voltages (4 kV to 80 kV). A vacuum spark gap and a thyratron have been chosen for test and evaluation as candidate switches for the abort modulator. Modulator design, switching time delay, jitter and pre-fire data are presented.

  1. Proc. International Symposium on Circuits and Systems (ISCAS), vol. 5, pp 653 -656, Geneva (Switzerland), May 2000 Low Power/Low Voltage High Speed CMOS Differential

    E-Print Network [OSTI]

    Fayomi, Christian

    @vlsi.polymtl.ca ABSTRACT A new CMOS differential latched comparator suitable for low voltage, low-power application domains. At the same time, designing analog circuits that can operate from a low-voltage supply on a single ended design configuration. It consists of two operational transconductance amplifiers (NMOS

  2. Design, construction and operational results of the IGBT controlled solid state modulator high voltage power supply used in the high power RF systems of the Low Energy Demonstration Accelerator of the accelerator production of tritium (APT) project

    SciTech Connect (OSTI)

    Bradley, J.T. III; Rees, D.; Przeklasa, R.S. [Los Alamos National Lab., NM (United States); Scott, M.C. [Continental Electronics Corp., Dallas, TX (United States)

    1998-12-31T23:59:59.000Z

    The 1700 MeV, 100 mA Accelerator Production of Tritium (APT) Proton Linac will require 244 1 MW, continuous wave RF systems. 1 MW continuous wave klystrons are used as the RF source and each klystron requires 95 kV, 17 A of beam voltage and current. The cost of the DC power supplies is the single largest percentage of the total RF system cost. Power supply reliability is crucial to overall RF system availability and AC to DC conversion efficiency affects the operating cost. The Low Energy Demonstration Accelerator (LEDA) being constructed at Los Alamos National Laboratory (LANL) will serve as the prototype and test bed for APT. The design of the RF systems used in LEDA is driven by the need to field test high efficiency systems with extremely high reliability before APT is built. The authors present a detailed description and test results of one type of advanced high voltage power supply system using Insulated Gate Bipolar Transistors (IGBTs) that has been used with the LEDA High Power RF systems. The authors also present some of the distinctive features offered by this power supply topology, including crowbarless tube protection and modular construction which allows graceful degradation of power supply operation.

  3. Double row loop-coil configuration for high-speed electrodynamic maglev suspension, guidance, propulsion and guideway directional switching

    DOE Patents [OSTI]

    He, J.; Rote, D.M.

    1996-05-21T23:59:59.000Z

    A stabilization and propulsion system are disclosed comprising a series of loop-coils arranged in parallel rows wherein two rows combine to form one of two magnetic rails. Levitation and lateral stability are provided when the induced field in the magnetic rails interacts with the superconducting magnets mounted on the magnetic levitation vehicle. The loop-coils forming the magnetic rails have specified dimensions and a specified number of turns and by constructing differently these specifications, for one rail with respect to the other, the angle of tilt of the vehicle can be controlled during directional switching. Propulsion is provided by the interaction of a traveling magnetic wave associated with the coils forming the rails and the superconducting magnets on the vehicle. 12 figs.

  4. Double row loop-coil configuration for high-speed electrodynamic maglev suspension, guidance, propulsion and guideway directional switching

    DOE Patents [OSTI]

    He, Jianliang (Naperville, IL); Rote, Donald M. (Lagrange, IL)

    1996-01-01T23:59:59.000Z

    A stabilization and propulsion system comprising a series of loop-coils arranged in parallel rows wherein two rows combine to form one of two magnetic rails. Levitation and lateral stability are provided when the induced field in the magnetic rails interacts with the superconducting magnets mounted on the magnetic levitation vehicle. The loop-coils forming the magnetic rails have specified dimensions and a specified number of turns and by constructing differently these specifications, for one rail with respect to the other, the angle of tilt of the vehicle can be controlled during directional switching. Propulsion is provided by the interaction of a traveling magnetic wave associated with the coils forming the rails and the super conducting magnets on the vehicle.

  5. Radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, Gordon E. (Albuquerque, NM)

    1990-01-01T23:59:59.000Z

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  6. A 4000-A HVDC (high-voltage direct-current) circuit breaker with fast fault-clearing capability: Final report

    SciTech Connect (OSTI)

    Not Available

    1988-04-01T23:59:59.000Z

    This project is a follow-up of the first development of a 500 kV HVDC airblast circuit breaker (EPRI project 1507-3). The objective was to increase the current interrupting capability from 2200 A to 4000 A and shorten its fault clearing time. A high current 500 kV HVDC circuit breaker has been built using the passive commutation circuit. The breaker is modular in construction and can be designed for a wide variety of system conditions. More than 400 current interruptions were carried out successfully. Tests have shown that this circuit breaker is capable of interrupting more than 4000 A dc. Practical breakers with current interrupting capability of even 5500 A dc could be built. The circuit breaker operation and the fault-clearing process can be materially speeded up if the trip signal is given as soon as the fault is detected and without waiting for the current levels to come down in response to converter control action. The new dc breakers are shown to be capable of withstanding these transient arc currents of 8000 A without affecting its ability to interrupt the direct current that follows the transient. This transient current withstand capability is greater than is likely to occur during dc faults. The fault clearing time of this HVDC circuit breaker is comparable to the fault clearing time of conventional ac breakers for ac faults. The developed HVDC circuit breaker is now commercially available and can be supplied for use in HVDC systems. Its use in such systems is expected to provide flexibility in system design and contribute to system stability. 38 refs., 52 figs., 9 tabs.

  7. Total current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping D. Jin, J. Joh*, S. Krishnan*, N. Tipirneni*, S. Pendharkar* and J. A. del Alamo

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Total current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping D. Jin, J. Joh*, S collapse in GaN MIS-HEMTs for >600 V operation. Extreme trapping leading to total current collapse has been trapping ("Zener trapping") inside the AlGaN barrier or the GaN channel layers. The trapping takes place

  8. Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

    SciTech Connect (OSTI)

    Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

    2013-12-15T23:59:59.000Z

    Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

  9. Dynamic photorefractivity guided by single-pulse voltage

    SciTech Connect (OSTI)

    Agashkov, A. V., E-mail: agashkov@inel.bas.net.by; Kovalev, A. A. [National Academy of Sciences of Belarus, Institute of Electronics (Belarus); Parka, J. [Military University of Technology, Institute of Applied Physics (Poland)

    2008-03-15T23:59:59.000Z

    The dynamic photorefractivity in a cell with photoconducting orienting layers, filled with a nematic liquid crystal (LC) 6CHBT and a mixture of anthraquinone dyes AD1 and AD2, has been investigated. The single-pulse mode, in which the polarity and amplitude of a dc electric field applied to an LC cell are switched for a fixed time interval, has been used. The scheme of dynamic self-diffraction of low-power laser beams was used in the experiment. The dependences of the width and intensity of diffraction pulses on the bias and switching voltages have been investigated. It is established that the width and intensity of the diffraction pulse arising after initial voltage recovery depends also on the switching pulse width. At the optimal width of the control pulse, the diffraction efficiency increases by two orders of magnitude.

  10. Voltage Control Technical Conference

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Intro Voltage Control Conference - BPA Active Power Control in Wind Parks - Siemens Interconnection Criteria for Frequency Response Requirements - NERC Model Validation...

  11. Investigation of the spatiotemporal characteristics of the electric field in the Ne-H{sub 2} plasma of a beam-type high-voltage pulsed discharge

    SciTech Connect (OSTI)

    Demkin, V. P.; Mel'nichuk, S. V.; Borisov, A. V.; Bardin, S. S. [National Research Tomsk State University, 36, Lenin Ave., 634050 Tomsk (Russian Federation)] [National Research Tomsk State University, 36, Lenin Ave., 634050 Tomsk (Russian Federation)

    2013-12-15T23:59:59.000Z

    In the present work, the spatiotemporal dynamics of the electric field E(x, t) of plasma produced by a beam-type high-voltage pulsed discharge is investigated. The electric field strength E(x, t) in an accelerating gap and in a plasma flare was determined from the measured Stark splitting of the H{sub ?} hydrogen line. The obtained dependence E(x, t) was used to calculate the electron distribution function and the spectral line intensities in the accelerating gap and in the plasma flare by the method of statistical modeling. The calculated population of He atomic states excited by electron impact and their comparison with the measured spectral line intensities I(?, x, t) demonstrate that a reverse electric field retarding the electron motion and leading to electron beam degradation must be present in the plasma flare near the grid. Measurement of the field strength from the Stark splitting of the H{sub ?} line demonstrates that it can reach considerable values.

  12. Influence of co-field and cross field flow of mineral oil with and without additives on conduction current and breakdown voltage in highly nonuniform fields

    SciTech Connect (OSTI)

    Megahed, I.Y.; Abdallah, M.A. [Univ. of Alexandria (Egypt). Electrical Engineering Dept.; Zaky, A.A. [Arab Academy for Science and Technology, Alexandria (Egypt)

    1996-12-31T23:59:59.000Z

    The paper presents the results of the effect of enforced co-field and cross-field oil flow on the conduction current and breakdown voltage of degassed oil, oil saturated with O{sub 2} and with SF6 and oil containing 1-methylnaphthalene (MN) and dimethylaniline (DMA) as additives. Direct voltage and a point-to-plane electrode geometry were used and results were obtained for both polarities of the point electrode. A general conclusion from all experiments is that oil flow, whether co-field or cross-field, raises the breakdown voltage and lowers the conduction current. The results also show that the exception of DMA, all additives both gaseous (O{sub 2} and SF6) or solid (MN) raised the breakdown voltage and reduced conduction current, compared with degassed oil, for both polarities of the point electrode. These effects are attributed to the electron-trapping properties of the additives.

  13. Effects of High-Altitude Electromagnetic Pulse (HEMP) on the Northern Telecom Inc. DMS-100 (trademark) switch. Volume 1. Executive summary. Final report

    SciTech Connect (OSTI)

    Not Available

    1988-09-01T23:59:59.000Z

    This report is part of a three volume set that presents the results of simulated High Altitude Electromagnetic Pulse (HEMP) testing of a DMS-100 switching system. This volume presents a brief discussion of the test events and the test results, and summarizes the conclusions and recommendations of the test program. Volume II is a detailed description of the test procedures, the test results, and the mitigation alternatives evaluated. Volume II also presents a discussion of the conclusions and recommendations of the program. Volume III describes the post-test analysis of the measured electromagnetic fields and induced transients. Volume III also includes a comparison of the characteristic attributes of the various simulator environments.

  14. Electronically commutated serial-parallel switching for motor windings

    DOE Patents [OSTI]

    Hsu, John S. (Oak Ridge, TN)

    2012-03-27T23:59:59.000Z

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  15. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect (OSTI)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li [Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P.O. Box 919-108, Mianyang 621900 (China)

    2014-09-15T23:59:59.000Z

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ?40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  16. Latching micro optical switch

    DOE Patents [OSTI]

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21T23:59:59.000Z

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  17. PBC: A Partially Buffered Crossbar Packet Switch

    E-Print Network [OSTI]

    Kuzmanov, Georgi

    fabric is widely used as the interconnect of high-performance packet switches due to its low cost-performance packet switches because of its low cost and scalability. As a result, the vast majority and scalability. There are two main variants of the crossbar fabric: unbuffered and internally buffered. On one

  18. Asynchronous vs Synchronous Input-Queued Switches

    E-Print Network [OSTI]

    of high-performance switches. 1 INTRODUCTION A vast technical literature exists on input-queued (IQ to performance losses in comparison with synchronous cell switching, these losses are limited, and may be smaller than the losses due to the above-mentioned segmenta- tion/reassembly overheads. In real scenarios

  19. 275 C Downhole Switched-Mode Power Supply

    SciTech Connect (OSTI)

    Chris Hutchens; Vijay Madhuravasal

    2008-08-31T23:59:59.000Z

    A vee-square (V2) control based controller IC is developed for a switch mode power supply capable of operating at extreme temperature/harsh environment conditions. A buck type regulator with silicon carbide power junction field effect transistors (JFET) as power devices is used to analyze the performance of controller. Special emphases are made on the analog sub-blocks--voltage reference, operational transconductance amplifier and comparator as individual building blocks. Transformer coupled gate drives and high temperature operable magnetic cores and capacitors are identified and tested for use in the design. Conventional ceramic chip packaging of ICs combined with lead carrier type mounting of passive filter components is introduced for hybrid packaging of the complete product. The developed SMPS is anticipated to support the operation of down-hole microcontrollers and other electronics devices that require low/medium power filtered dc inputs over an operating temperature of 275 C.

  20. Voltage verification unit

    DOE Patents [OSTI]

    Martin, Edward J. (Virginia Beach, VA)

    2008-01-15T23:59:59.000Z

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  1. Vehicle Technologies Office Merit Review 2014: High Energy Density Li-ion Cells for EV’s Based on Novel, High Voltage Cathode Material Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Farasis Energy, Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high energy density Li...

  2. Vehicle Technologies Office Merit Review 2015: High Energy Density Li-ion Cells for EV’s Based on Novel, High Voltage Cathode Material Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Farasis at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high energy density Li-ion cells for...

  3. Fundamental Frequency Switching Control of Seven-Level Hybrid Cascaded H-bridge Multilevel Inverter

    SciTech Connect (OSTI)

    Du, Zhong [ORNL; Chiasson, John N [ORNL; Ozpineci, Burak [ORNL; Tolbert, Leon M [ORNL

    2009-01-01T23:59:59.000Z

    This paper presents a cascaded H-bridge multilevel inverter that can be implemented using only a single dc power source and capacitors. Standard cascaded multilevel inverters require n dc sources for 2n + 1 levels. Without requiring transformers, the scheme proposed here allows the use of a single dc power source (e.g., a battery or a fuel cell stack) with the remaining n-1 dc sources being capacitors, which is referred to as hybrid cascaded H-bridge multilevel inverter (HCMLI) in this paper. It is shown that the inverter can simultaneously maintain the dc voltage level of the capacitors and choose a fundamental frequency switching pattern to produce a nearly sinusoidal output. HCMLI using only a single dc source for each phase is promising for high-power motor drive applications as it significantly decreases the number of required dc power supplies, provides high-quality output power due to its high number of output levels, and results in high conversion efficiency and low thermal stress as it uses a fundamental frequency switching scheme. This paper mainly discusses control of seven-level HCMLI with fundamental frequency switching control and how its modulation index range can be extended using triplen harmonic compensation.

  4. Apollo Ring Optical Switch

    SciTech Connect (OSTI)

    Maestas, J.H.

    1987-03-01T23:59:59.000Z

    An optical switch was designed, built, and installed at Sandia National Laboratories in Albuquerque, New Mexico, to facilitate the integration of two Apollo computer networks into a single network. This report presents an overview of the optical switch as well as its layout, switch testing procedure and test data, and installation.

  5. Insight into the Atomic Structure of High-Voltage Spinel LiNi0.5Mn1.5O4 Cathode Material in the First Cycle

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huang, Xuejie; Yu, Xiqian; Lin, Mingxiang; Ben, Liubin; Sun, Yang; Wang, Hao; Yang, Zhenzhong; Gu, Lin; Yang, Xiao -Qing; Zhao, Haofei; et al

    2015-01-13T23:59:59.000Z

    Application of high-voltage spinel LiNi0.5Mn1.5O4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi0.5Mn1.5O4 cathode material. Although it is well-known that the structure of LiNi0.5Mn1.5O4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations ofmore »local atomic-level and average structure of LiNi0.5Mn1.5O4 during first cycle (3.5–4.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi0.5Mn1.5O4//Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi0.5Mn1.5O4 particles show migration of TM ions into tetrahedral Li sites to form a Mn3O4-like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi0.5Mn1.5O4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi0.5Mn1.5O4 structure to obtain better electrochemical performance.« less

  6. Insight into the Atomic Structure of High-Voltage Spinel LiNi0.5Mn1.5O4 Cathode Material in the First Cycle

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huang, Xuejie [Chinese Academy of Sciences, Beijing (China); Yu, Xiqian [Brookhaven National Laboratory (BNL), Upton, NY (United States); Lin, Mingxiang [Chinese Academy of Sciences, Beijing (China); Ben, Liubin [Chinese Academy of Sciences, Beijing (China); Sun, Yang [Chinese Academy of Sciences, Beijing (China); Wang, Hao [Chinese Academy of Sciences, Beijing (China); Yang, Zhenzhong [Chinese Academy of Sciences, Beijing (China); Gu, Lin [Chinese Academy of Sciences, Beijing (China); Yang, Xiao -Qing [Brookhaven National Laboratory (BNL), Upton, NY (United States); Zhao, Haofei [Chinese Academy of Sciences, Beijing (China); Yu, Richeng [Chinese Academy of Sciences, Beijing (China); Armand, Michel [CIC Energigune, Alava (Spain)

    2015-01-13T23:59:59.000Z

    Application of high-voltage spinel LiNi0.5Mn1.5O4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi0.5Mn1.5O4 cathode material. Although it is well-known that the structure of LiNi0.5Mn1.5O4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations of local atomic-level and average structure of LiNi0.5Mn1.5O4 during first cycle (3.5–4.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi0.5Mn1.5O4//Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi0.5Mn1.5O4 particles show migration of TM ions into tetrahedral Li sites to form a Mn3O4-like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi0.5Mn1.5O4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi0.5Mn1.5O4 structure to obtain better electrochemical performance.

  7. Electro-optical voltage sensor head

    DOE Patents [OSTI]

    Woods, Gregory K. (Idaho Falls, ID)

    1998-01-01T23:59:59.000Z

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  8. A new technique to reject dc-link voltage ripple in PWM inverters

    E-Print Network [OSTI]

    Shireen, Wajiha

    1990-01-01T23:59:59.000Z

    to acknowledge the support of my husband and parents. TA. BLE OF CONTENTS CHAPTER I INTRODUCTION Page I. l Inverter Power Supplies 1. 2 Output Voltage Control 1. 2. 1 Control Of Voltage Supplied To The Inverter I. 2. 2 Control Of Voltage Within... and output of Stage 3 78 34 Exact solution of the switching angle trajectories for harmonic elimination with voltage control (M). 85 CHAPTER I INTRODUCTION Finding ways to control the flow of electricity has been a. goal of inventors and scientists...

  9. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, Martin S. (Los Alamos, NM)

    1984-01-01T23:59:59.000Z

    A high-repetition rate switch for delivering short duration, high-power electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  10. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, M.S.

    1982-05-19T23:59:59.000Z

    A high-repetition rate switch is described for delivering short duration, high-powered electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  11. On the Combined Input-Crosspoint Buffered Switch with Round-Robin Arbitration

    E-Print Network [OSTI]

    Rojas-Cessa, Roberto

    through. Therefore, the search for switch/router architectures with high performance and large capacity) Segmentation of incoming variable-size packets at the ingress side of a switch to perform internal switching, the performance of packet switches are con- strained by memory speed and the efficiency of the arbitration scheme

  12. Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

    DOE Patents [OSTI]

    Mar, Alan (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo (Albuquerque, NM)

    2007-02-06T23:59:59.000Z

    An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

  13. Enhanced open voltage of BiFeO{sub 3} polycrystalline film by surface modification of organolead halide perovskite

    SciTech Connect (OSTI)

    Zhao, Pengjun [Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Bian, Liang; Xu, Jinbao, E-mail: xujb@ms.xjb.ac.cn; Chang, Aimin [Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China); Wang, Lei [Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China); Department of Research and Development, Shanghai Shanshan Tech. Co., Ltd., Shanghai 201209, China and Department of Chemistry, Zhejiang University, Hangzhou 310027 (China)

    2014-07-07T23:59:59.000Z

    Inorganic-organolead halide perovskite CH{sub 3}NH{sub 3}PbI{sub 3} modified BiFeO{sub 3} polycrystalline film has been established. The composite photoelectrode presents much larger open voltage and several magnitudes superior photoelectric conversion performance in comparison to the ordinary BiFeO{sub 3} polycrystalline film. The I-V curve shows that the short-circuit current (J{sub sc}) is 1.74?mA·cm{sup ?2} and open-circuit voltage (V{sub oc}) is 1.62?V, the device's photon to current efficiency is over 1%. The large open voltage and high photovoltaic efficiency is believed to attributed to the spontaneous polarization of composite perovskite induced by BiFeO{sub 3} lattice and modified reduced work function of the modified BiFeO{sub 3} surface. Our results clearly show that the present BiFeO{sub 3}-CH{sub 3}NH{sub 3}PbI{sub 3} planar device is capable to generate a large voltage in macro scale under visible light, leading an approach to further applications on photodetectors and optoelectronic switch.

  14. Electron launching voltage monitor

    DOE Patents [OSTI]

    Mendel, C.W.; Savage, M.E.

    1992-03-17T23:59:59.000Z

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors. 5 figs.

  15. Threshold voltage extraction circuit

    E-Print Network [OSTI]

    Hoon, Siew Kuok

    2000-01-01T23:59:59.000Z

    to that of the saturation method. However, instead of fixing Vos ? Vos, the drain current is measured as a function of Vos while Vns is fixed at a constant low voltage of 100mV to ensure operation in the linear MOSFET region. Neglecting channel length modulation effect... transistors are layout next to the DUT of the NMOS and PMOS Vr extraction circuits respectively for extraction of Vr via graphical means. GRAPHICAL METHOD OF THE THRESHOLD-VOLTAGE MEASUREMENT Using the graphical method, the characteristics of 4n versus Vos...

  16. Alarm toe switch

    DOE Patents [OSTI]

    Ganyard, Floyd P. (Albuquerque, NM)

    1982-01-01T23:59:59.000Z

    An alarm toe switch inserted within a shoe for energizing an alarm circuit n a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch. The reed switch is hermetically sealed with the magnet acting through the wall so the switch assembly S is capable of reliable operation even in wet and corrosive environments.

  17. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  18. Concept of Quasi-Capacitive Tapping of Bipolar Voltage-Controlled Oscillators

    E-Print Network [OSTI]

    Serdijn, Wouter A.

    Concept of Quasi-Capacitive Tapping of Bipolar Voltage-Controlled Oscillators Aleksandar Tasic the active part of the oscillator and the LC-tank, as proposed in this paper, the voltage swing over the tank of high- performance bipolar voltage-controlled oscillators (VCO's). As the voltage-controlled oscillators

  19. Switching dynamics in cholesteric blue phases

    E-Print Network [OSTI]

    A. Tiribocchi; G. Gonnella; D. Marenduzzo; E. Orlandini

    2011-03-30T23:59:59.000Z

    Blue phases are networks of disclination lines, which occur in cholesteric liquid crystals near the transition to the isotropic phase. They have recently been used for the new generation of fast switching liquid crystal displays. Here we study numerically the steady states and switching hydrodynamics of blue phase I (BPI) and blue phase II (BPII) cells subjected to an electric field. When the field is on, there are three regimes: for very weak fields (and strong anchoring at the boundaries) the blue phases are almost unaffected, for intermediate fields the disclinations twist (for BPI) and unzip (for BPII), whereas for very large voltages the network dissolves in the bulk of the cell. Interestingly, we find that a BPII cell can recover its original structure when the field is switched off, whereas a BPI cell is found to be trapped more easily into metastable configurations. The kinetic pathways followed during switching on and off entails dramatic reorganisation of the disclination networks. We also discuss the effect of changing the director field anchoring at the boundary planes and of varying the direction of the applied field.

  20. Large aperture optical switching devices

    SciTech Connect (OSTI)

    Goldhar, J.; Henesian, M.A.

    1983-12-12T23:59:59.000Z

    We have developed a new approach to constructing large aperture optical switches for next generation inertial confinement fusion lasers. A transparent plasma electrode formed in low pressure ionized gas acts as a conductive coating to allow the uniform charging of the optical faces of an electro-optic material. In this manner large electric fields can be applied longitudinally to large aperture, high aspect ratio Pockels cells. We propose a four-electrode geometry to create the necessary high conductivity plasma sheets, and have demonstrated fast (less than 10 nsec) switching in a 5x5 cm aperture KD*P Pockels cell with such a design. Detaid modelling of Pockels cell performance with plasma electrodes has been carried out for 15 and 30 cm aperture designs.

  1. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, Jon S. (Albuquerque, NM); Hietala, Vincent M. (Placitas, NM); Hohenwarter, Gert K. G. (Madison, WI)

    1994-01-01T23:59:59.000Z

    A HTS switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time.

  2. Multiprocessor switch with selective pairing

    DOE Patents [OSTI]

    Gara, Alan; Gschwind, Michael K; Salapura, Valentina

    2014-03-11T23:59:59.000Z

    System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or processor cores that provide one highly reliable thread for high-reliability connect with a system components such as a memory "nest" (or memory hierarchy), an optional system controller, and optional interrupt controller, optional I/O or peripheral devices, etc. The memory nest is attached to a selective pairing facility via a switch or a bus

  3. Michael Scholl, mss4@wustl.edu (A paper written under the guidance of Prof. Raj Jain) Download High availability is one of the major goals of smart grid systems. This paper examines the availability of wind turbines, a high voltage DC (HVDC)

    E-Print Network [OSTI]

    Jain, Raj

    the availability of wind turbines, a high voltage DC (HVDC) transmission system, and a supervisory control and data of a Wind Turbine 3.2 Availability Data 3.3 Sensitivity Analysis 4. HVDC Transmission System 4.1 Parts of a HVDC Transmission System 4.2 Availability Data 4.3 Sensitivity Analysis 5. Control System 5.1 Parts

  4. INTEGRATED GHz VOLTAGE CONTROLLED OSCILLATORS

    E-Print Network [OSTI]

    Kinget, Peter

    INTEGRATED GHz VOLTAGE CONTROLLED OSCILLATORS Peter Kinget Bell Labs - Lucent Technologies Murray Hill, NJ (USA) Abstract The voltage controlled oscillator (VCO) is a critical sub. We focus on the de- sign of a critical sub-block: the voltage controlled oscillator (VCO). We review

  5. Electro-optic voltage sensor for sensing voltage in an E-field

    DOE Patents [OSTI]

    Woods, Gregory K. (Idaho Falls, ID); Renak, Todd W. (Idaho Falls, ID)

    1999-01-01T23:59:59.000Z

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  6. Electro-optic voltage sensor for sensing voltage in an E-field

    DOE Patents [OSTI]

    Woods, G.K.; Renak, T.W.

    1999-04-06T23:59:59.000Z

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 18 figs.

  7. Comparative Study of Switched Reluctance Motors Performances for Two Current

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    of machines as high torque ripple, high acoustic noise and vibration limit their industrial applications [1Comparative Study of Switched Reluctance Motors Performances for Two Current Distributions a 3-phase, 6-slot, and 4-pole Mutually Coupled Switched Reluctance Motor (MCSRM 6/4) with new current

  8. Plasmonic enhanced ultrafast switch.

    SciTech Connect (OSTI)

    Subramania,Ganapathi Subramanian; Reno, John Louis; Passmore, Brandon Scott; Harris, Tom.; Shaner, Eric Arthur; Barrick, Todd A.

    2009-09-01T23:59:59.000Z

    Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.

  9. An optical switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Hunter, S.R.

    1987-04-30T23:59:59.000Z

    The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

  10. Frame-Scheduling for Input-Queued Switches with Energy Reconfiguration Costs

    E-Print Network [OSTI]

    preserving high throughput. The relationship between energy consumption, switch con- figuration and data consumption needed to configure the switching fabric and we assume that the energy depends on the number, power and energy consumption in high speed switches/routers become one of the most critical design

  11. Low inductance gas switching.

    SciTech Connect (OSTI)

    Chavez, Ray; Harjes, Henry Charles III; Wallace, Zachariah; Elizondo, Juan E.

    2007-10-01T23:59:59.000Z

    The laser trigger switch (LTS) is a key component in ZR-type pulsed power systems. In ZR, the pulse rise time through the LTS is > 200 ns and additional stages of pulse compression are required to achieve the desired <100 ns rise time. The inductance of the LTS ({approx}500nH) in large part determines the energy transfer time through the switch and there is much to be gained in improving system performance and reducing system costs by reducing this inductance. The current path through the cascade section of the ZR LTS is at a diameter of {approx} 6-inches which is certainly not optimal from an inductance point of view. The LTS connects components of much greater diameter (typically 4-5 feet). In this LDRD the viability of switch concepts in which the diameter of cascade section is greatly increased have been investigated. The key technical question to be answered was, will the desired multi-channel behavior be maintained in a cascade section of larger diameter. This LDRD proceeded in 2 distinct phases. The original plan for the LDRD was to develop a promising switch concept and then design, build, and test a moderate scale switch which would demonstrate the key features of the concept. In phase I, a switch concept which meet all electrical design criteria and had a calculated inductance of 150 nH was developed. A 1.5 MV test switch was designed and fabrication was initiated. The LDRD was then redirected due to budgetary concerns. The fabrication of the switch was halted and the focus of the LDRD was shifted to small scale experiments designed to answer the key technical question concerning multi-channel behavior. In phase II, the Multi-channel switch test bed (MCST) was designed and constructed. The purpose of MCST was to provide a versatile, fast turn around facility for the study the multi-channel electrical breakdown behavior of a ZR type cascade switch gap in a parameter space near that of a ZR LTS. Parameter scans on source impedance, gap tilt, gap spacing and electrode diameter were conducted.

  12. Voltage stability of the Puget Sound system under abnormally cold weather conditions

    SciTech Connect (OSTI)

    Jimma, K.M.; Sheehan, M.T. (Puget Sound Power and Light, Bellevue, WA (United States)); Comegys, G.L. (Bonneville Power Administration, Portland, OR (United States)); Miller, N.W.; D'Aquila, R.

    1993-08-01T23:59:59.000Z

    The potential for voltage collapse in the Puget Sound area is analyzed. Shunt and series compensation schemes, as well as undervoltage load shedding, are evaluated. Twenty-five minute time simulations of the Puget Sound area system are presented, showing interaction of load dynamics with LTCs, switched compensation and protective equipment. Results and analysis are relevant to utilities worldwide which must address similar concerns.

  13. Reduction of Shaft Voltages and Bearing Currents in Five-Phase Induction Motor

    E-Print Network [OSTI]

    Hussain, Hussain

    2012-07-16T23:59:59.000Z

    are studied and a new solution is proposed. First, theory of shaft voltage and bearing current are presented. The causes are identified and current solutions are discussed. Then, new switching patterns are proposed for the five-phase induction motor. The new...

  14. Thermionic gas switch

    DOE Patents [OSTI]

    Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

    1984-04-05T23:59:59.000Z

    The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

  15. Reconfigurable optical switches with monolithic electrical-to-optical interfaces

    SciTech Connect (OSTI)

    Cheng, J.; Zhou, P. [New Mexico Univ., Albuquerque, NM (United States). Center for High Technology Materials; Zolper, J.C.; Lear, K.L.; Vawter, G.A. [Sandia National Labs., Albuquerque, NM (United States); Leibenguth, R.E.; Adams, A.C. [AT and T Bell Labs., Breinigsville, PA (United States)

    1994-03-01T23:59:59.000Z

    Vertical cavity surface-emitting lasers (VCSELs) can be integrated with heterojunction phototransistors (HPTs) and heterojunction bipolar transistors (HBTs) on the same wafer to form high speed optical and optoelectronic switches, respectively, that can be optically or electrically addressed. This permits the direct communication and transmission of data between distributed electronic processors through an optical switching network. The experimental demonstration of an integrated optoelectronic HBT/VCSEL switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a VCSEL is described below, using the same epilayer structure upon which binary HPT/VCSEL optical switches are also built. The monolithic HBT/VCSEL switch has high current gain, low power dissipation, and a high optical to electrical conversion efficiency. Its modulation has been measured and modeled.

  16. Entry, Innovation, and Exit Evidence From LAN Switch Industry

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Entry, Innovation, and Exit Evidence From LAN Switch Industry N° 2007-02 Janvier 2007 Roberto Fontana Lionel Nesta #12;Entry, Innovation, and Exit Evidence From LAN Switch Industry Roberto Fontana of heterogeneous exit, we find that firms with high pre-entry experience and higher technical expertise are more

  17. Multistage-Based Switching Fabrics for Scalable Routers

    E-Print Network [OSTI]

    Tzeng, Nian-Feng

    with distributed packet routing to achieve high scalability and low costs. Our fabrics are based on a multistage patterns are evaluated and discussed as well. Being scalable and of low costs, the proposed switching their arrival LCs toward their destined LCs. Switching fabrics naturally affect overall router perfor- mance

  18. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 2 Materials

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  19. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 3 Electrochemistry

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  20. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 1 Baseline Protocols and Analysis

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  1. Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

    DOE Patents [OSTI]

    Bittner, John W. (Shoreham, NY); Biscardi, Richard W. (Ridge, NY)

    1991-01-01T23:59:59.000Z

    An electronic measurement circuit for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals.

  2. Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

    DOE Patents [OSTI]

    Bittner, J.W.; Biscardi, R.W.

    1991-03-19T23:59:59.000Z

    An electronic measurement circuit is disclosed for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals. 2 figures.

  3. Analysis of the Ultra-fast Switching Dynamics in a Hybrid MOSFET/Driver

    SciTech Connect (OSTI)

    Tang, T.; Burkhart, C.; /SLAC

    2011-08-17T23:59:59.000Z

    The turn-on dynamics of a power MOSFET during ultra-fast, {approx} ns, switching are discussed in this paper. The testing was performed using a custom hybrid MOSFET/Driver module, which was fabricated by directly assembling die-form components, power MOSFET and drivers, on a printed circuit board. By using die-form components, the hybrid approach substantially reduces parasitic inductance, which facilitates ultra-fast switching. The measured turn on time of the hybrid module with a resistive load is 1.2 ns with an applied voltage of 1000 V and drain current of 33 A. Detailed analysis of the switching waveforms reveals that switching behavior must be interpreted differently in the ultra-fast regime. For example, the gate threshold voltage to turn on the device is observed to increase as the switching time decreases. Further analysis and simulation of MOSFET switching behavior shows that the minimum turn on time scales with the product of the drain-source on resistance and drain-source capacitance, R{sub DS(on)}C{sub OSS}. This information will be useful in power MOSFET selection and gate driver design for ultra-fast switching applications.

  4. Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

    DOE Patents [OSTI]

    Turner, Steven Richard

    2006-12-26T23:59:59.000Z

    A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

  5. Asynchronous vs Synchronous Input-Queued Switches

    E-Print Network [OSTI]

    for the design of high-performance switches. I. INTRODUCTION A vast technical literature exists on input. Unfortunately the technical literature has largely neglected this situation, and concentrated the attention throughput, or to simpler scheduling. Even when the asynchronous operation leads to performance losses

  6. CreditFlowControlled ATM over HIC Links in the ASICCOM ``ATLAS I'' SingleChip Switch

    E-Print Network [OSTI]

    Katevenis, Manolis G.H.

    flow control. 1. Introduction Switches are the building blocks for high­speed networks in which high adopted as the main high speed technology in both wide and local area networks. ATM has been architected­LAne Switch I): a general­purpose, single­chip gigabit ATM switch, with credit­based flow control, multiple

  7. October 6, 2006 V. Ghazikhanian 1 TOF Low Voltage System Review

    E-Print Network [OSTI]

    Llope, William J.

    TOF Low Voltage Power System. The TOF low voltage system is based on the Wiener PL512 low noise, high45 plugs #12;October 6, 2006 V. Ghazikhanian Tray Low Voltage Power System. Totalof120 the plot of the dark current data on slide]. The DC power will be transmitted via DC transmission lines

  8. Fast Optimization of Nano-CMOS Voltage-Controlled Oscillator using Polynomial Regression and Genetic Algorithm

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    Fast Optimization of Nano-CMOS Voltage-Controlled Oscillator using Polynomial Regression in a current-starved 50nm voltage-controlled oscillator (VCO). Accurate polynomial-regression based models have-CMOS), Voltage-Controlled Oscillator (VCO). 1. Introduction Digital design exploration and optimization is highly

  9. The vertical voltage termination technique characterizations of single die multiple 600V power

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    The vertical voltage termination technique ­ characterizations of single die multiple 600V power.grenoble-inp.fr Abstract-- Deep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept

  10. Local Dynamic Reactive Power for Correction of System Voltage Problems

    SciTech Connect (OSTI)

    Kueck, John D [ORNL; Rizy, D Tom [ORNL; Li, Fangxing [ORNL; Xu, Yan [ORNL; Li, Huijuan [University of Tennessee, Knoxville (UTK); Adhikari, Sarina [ORNL; Irminger, Philip [ORNL

    2008-12-01T23:59:59.000Z

    Distribution systems are experiencing outages due to a phenomenon known as local voltage collapse. Local voltage collapse is occurring in part because modern air conditioner compressor motors are much more susceptible to stalling during a voltage dip than older motors. These motors can stall in less than 3 cycles (.05s) when a fault, such as on the sub-transmission system, causes voltage to sag to 70 to 60%. The reasons for this susceptibility are discussed in the report. During the local voltage collapse, voltages are depressed for a period of perhaps one or two minutes. There is a concern that these local events are interacting together over larger areas and may present a challenge to system reliability. An effective method of preventing local voltage collapse is the use of voltage regulation from Distributed Energy Resources (DER) that can supply or absorb reactive power. DER, when properly controlled, can provide a rapid correction to voltage dips and prevent motor stall. This report discusses the phenomenon and causes of local voltage collapse as well as the control methodology we have developed to counter voltage sag. The problem is growing because of the use of low inertia, high efficiency air conditioner (A/C) compressor motors and because the use of electric A/C is growing in use and becoming a larger percentage of system load. A method for local dynamic voltage regulation is discussed which uses reactive power injection or absorption from local DER. This method is independent, rapid, and will not interfere with conventional utility system voltage control. The results of simulations of this method are provided. The method has also been tested at the ORNL s Distributed Energy Communications and Control (DECC) Laboratory using our research inverter and synchronous condenser. These systems at the DECC Lab are interconnected to an actual distribution system, the ORNL distribution system, which is fed from TVA s 161kV sub-transmission backbone. The test results are also provided and discussed. The simulations and testing show that local voltage control from DER can prevent local voltage collapse. The results also show that the control can be provided so quickly, within 0.5 seconds, that is does not interfere with conventional utility methods.

  11. Dynamic simulation of voltage collapses

    SciTech Connect (OSTI)

    Deuse, J.; Stubbe, M. (Tractebel, Brussels (Belgium))

    1993-08-01T23:59:59.000Z

    Most of the time the voltage collapse phenomena are studied by means of computer programs designed for the calculation of steady state conditions. But in the real world, the simultaneous occurrences of losses of synchronism, of AVR dynamics or of transformer tap changes call for a full dynamic simulation of voltage phenomena. The present paper shows some examples of dynamic simulations of voltage phenomena using a new general purpose stability program (EUROSTAG), covering in a continuous way the classical fields of transient, mid-term and long-term stability, and also the quasi steady state conditions of a power system.

  12. Non-Droop Methods for Context-Sensitive Sharing in Multi-Module Switching Converters

    E-Print Network [OSTI]

    Kimball, Jonathan W.

    Non-Droop Methods for Context-Sensitive Sharing in Multi-Module Switching Converters Philip T droop or voltage droop controls support context-sensitive sharing. Droop gains can be set readily is to elucidate non-droop approaches that support context-sensitive sharing in various modular converter

  13. Energy Metering for Free: Augmenting Switching Regulators for Real-Time Monitoring

    E-Print Network [OSTI]

    Count, a new energy meter design. For many systems that have a built-in switching regulator, adding a single nearly linearly with load current for a variety of regulators. 1 The iCount Design Many battery a variety of regulator topologies (boost, buck, buck-boost), control modes (current-mode, voltage

  14. System Level Analysis of Fast, Per-Core DVFS using On-Chip Switching Regulators

    E-Print Network [OSTI]

    Brooks, David

    -level application of the regulator. In this paper, we describe and model these costs, and perform a comprehensive workloads found in modern systems, motivates the need for fast, per-core DVFS control. Voltage regulatorsSystem Level Analysis of Fast, Per-Core DVFS using On-Chip Switching Regulators Wonyoung Kim, Meeta

  15. Andreev-level spectroscopy and Josephson-current switching in a three-terminal Josephson junction

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Andreev-level spectroscopy and Josephson-current switching in a three-terminal Josephson junction H. The voltage V applied to the normal-metal terminal controls the occupation of Andreev energy levels En the Andreev level. The differential conductance along the normal-metal terminal permits spectroscopy

  16. Plasma opening switch

    DOE Patents [OSTI]

    Savage, Mark E. (Albuquerque, NM); Mendel, Jr., Clifford W. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    A command triggered plasma opening switch assembly using an amplification stage. The assembly surrounds a coaxial transmission line and has a main plasma opening switch (POS) close to the load and a trigger POS upstream from the main POS. The trigger POS establishes two different current pathways through the assembly depended on whether it has received a trigger current pulse. The initial pathway has both POS's with plasma between their anodes and cathodes to form a short across the transmission line and isolating the load. The final current pathway is formed when the trigger POS receives a trigger current pulse which energizes its fast coil to push the conductive plasma out from between its anode and cathode, allowing the main transmission line current to pass to the fast coil of the main POS, thus pushing its plasma out the way so as to establish a direct current pathway to the load.

  17. The quantum cryptographic switch

    E-Print Network [OSTI]

    Srinatha Narayanaswamy; Omkar Srikrishna; R. Srikanth; Subhashish Banerjee; Anirban Pathak

    2011-11-21T23:59:59.000Z

    We illustrate using a quantum system the principle of a cryptographic switch, in which a third party (Charlie) can control to a continuously varying degree the amount of information the receiver (Bob) receives, after the sender (Alice) has sent her information. Suppose Charlie transmits a Bell state to Alice and Bob. Alice uses dense coding to transmit two bits to Bob. Only if the 2-bit information corresponding to choice of Bell state is made available by Charlie to Bob can the latter recover Alice's information. By varying the information he gives, Charlie can continuously vary the information recovered by Bob. The performance of the protocol subjected to the squeezed generalized amplitude damping channel is considered. We also present a number of practical situations where a cryptographic switch would be of use.

  18. SWITCH Model AND Data Description: 2050 Timeframe................................................ 2 SWITCH Model Description ........................................................................................................2

    E-Print Network [OSTI]

    Kammen, Daniel M.

    , Berkeley. SWITCH Model Description 1. Study Years, Months, Dates and Hours To simulate power system1 SWITCH Model AND Data Description: 2050 Timeframe................................................ 2 SWITCH Model Description

  19. Saving Megawatts with Voltage Optimization

    E-Print Network [OSTI]

    Wilson, T.; Bell, D.

    2010-01-01T23:59:59.000Z

    that had been installed at several electric utility distribution substations in the U.S. and Canada. These systems, being operated in Conservation Voltage Regulation mode, have provided significant energy conservation where they have been installed...

  20. Voltage tunable microwave ferrite resonator

    E-Print Network [OSTI]

    Oates, Daniel E.

    A novel method of implementing a tunable resonator using an applied voltage is presented. Stress is used to tune a microstrip resonator fabricated on a polycrystalline ferrite substrate. The stress was applied either ...

  1. A Matter of Quantum Voltages

    SciTech Connect (OSTI)

    Sellner, Bernhard; Kathmann, Shawn M.

    2014-11-14T23:59:59.000Z

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. Electron holography is able to measure the variation of voltages in matter and modern supercomputers allow the calculation of quantum voltages with practically unlimited spatial and temporal resolution of bulk systems. Of particular interest is the Mean Inner Potential (Vo) - the spatial average of these voltages. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of Vo for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Furthermore, we predict Vo as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences. Pacific Northwest National Laboratory (PNNL) is a multiprogram national laboratory operated for DOE by Battelle. This research used resources of the National Energy Research Scientific Computing Center, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  2. Optically controlled waveplate at a telecom wavelength using a ladder transition in Rb atoms for all-optical switching and high speed Stokesmetric Imaging

    E-Print Network [OSTI]

    Subramanian Krishnamurthy; Y. Tu; Y. Wang; S. Tseng; M. S. Shahriar

    2014-08-01T23:59:59.000Z

    We demonstrate an optically controlled waveplate at ~1323 nm using the 5S1/2-5P1/2-6S1/2 ladder transition in a Rb vapor cell. The lower leg of the transitions represents the control beam, while the upper leg represents the signal beam. We show that we can place the signal beam in any arbitrary polarization state with a suitable choice of polarization of the control beam. Specifically, we demonstrate a differential phase retardance of ~180 degrees between the two circularly polarized components of a linearly polarized signal beam. We also demonstrate that the system can act as a Quarter Wave plate. The optical activity responsible for the phase retardation process is explained in terms of selection rules involving the Zeeman sublevels. As such, the system can be used to realize a fast Stokesmetric Imaging system with a speed of nearly 5 MHz. When implemented using a tapered nano fiber embedded in a vapor cell, this system can be used to realize an ultra-low power all-optical switch as well as a Quantum Zeno Effect based all-optical logic gate by combining it with an optically controlled polarizer, previously demonstrated by us. We present numerical simulations of the system using a comprehensive model which incorporates all the relevant Zeeman sub-levels in the system, using a novel algorithm recently developed by us for efficient computation of the evolution of an arbitrary large scale quantum system.

  3. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    SciTech Connect (OSTI)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27T23:59:59.000Z

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  4. Electro-optic voltage sensor with beam splitting

    DOE Patents [OSTI]

    Woods, Gregory K. (Cornelius, OR); Renak, Todd W. (Idaho Falls, ID); Davidson, James R. (Idaho Falls, ID); Crawford, Thomas M. (Idaho Falls, ID)

    2002-01-01T23:59:59.000Z

    The invention is a miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware typically found in the prior art. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  5. Electro-optic voltage sensor with Multiple Beam Splitting

    DOE Patents [OSTI]

    Woods, Gregory K. (Cornelius, OR); Renak, Todd W. (Idaho Falls, ID); Crawford, Thomas M. (Idaho Falls, ID); Davidson, James R. (Idaho Falls, ID)

    2000-01-01T23:59:59.000Z

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  6. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10T23:59:59.000Z

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  7. Sensor Switch's Bright Manufacturing Future

    Broader source: Energy.gov [DOE]

    The switch helps with cost effective energy savings by turning off the lights when an occupancy sensor says the room is empty.

  8. Voltage, energy and power in electric circuits

    E-Print Network [OSTI]

    Berzins, M.

    Voltage, energy and power in electric circuits Science teaching unit #12;Disclaimer The Department-2008DVD-EN Voltage, energy and power in electric circuits #12;#12;© Crown copyright 2008 1The National Strategies | Secondary Voltage, energy and power in electric circuits 00094-2008DVD-EN Contents Voltage

  9. Electro-optic voltage sensor head

    DOE Patents [OSTI]

    Crawford, Thomas M. (Idaho Falls, ID); Davidson, James R. (Idaho Falls, ID); Woods, Gregory K. (Cornelius, OR)

    1999-01-01T23:59:59.000Z

    The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers.

  10. Electro-optic voltage sensor head

    DOE Patents [OSTI]

    Crawford, T.M.; Davidson, J.R.; Woods, G.K.

    1999-08-17T23:59:59.000Z

    The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers. 6 figs.

  11. Polymerizable Additive for Passivating High Voltage Cathodes

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In this research project, we are studying the use of organic monomers as electrolyte additives that will oxidize and polymerize to form stable passivation films on the surface of...

  12. Resistive switching and conductance quantization in Ag/SiO{sub 2}/indium tin oxide resistive memories

    SciTech Connect (OSTI)

    Gao, S.; Chen, C.; Liu, H. Y.; Lin, Y. S.; Li, S. Z.; Lu, S. H.; Wang, G. Y.; Song, C.; Zeng, F., E-mail: zengfei@mail.tsinghua.edu.cn; Pan, F., E-mail: panf@mail.tsinghua.edu.cn [Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhai, Z. [Department of Metallurgical Engineering, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2014-08-11T23:59:59.000Z

    The Ag/SiO{sub 2}/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ?10{sup 2}, satisfactory endurance of >500 cycles, good retention property of >2000?s, and fast operation speed of <100?ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO{sub 2}/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density.

  13. Control method for peak power delivery with limited DC-bus voltage

    DOE Patents [OSTI]

    Edwards, John; Xu, Longya; Bhargava, Brij B.

    2006-09-05T23:59:59.000Z

    A method for driving a neutral point-clamped multi-level voltage source inverter supplying a synchronous motor is provided. A DC current is received at a neutral point-clamped multi-level voltage source inverter. The inverter has first, second, and third output nodes. The inverter also has a plurality of switches. A desired speed of a synchronous motor connected to the inverter by the first second and third nodes is received by the inverter. The synchronous motor has a rotor and the speed of the motor is defined by the rotational rate of the rotor. A position of the rotor is sensed, current flowing to the motor out of at least two of the first, second, and third output nodes is sensed, and predetermined switches are automatically activated by the inverter responsive to the sensed rotor position, the sensed current, and the desired speed.

  14. Ancillary service details: Voltage control

    SciTech Connect (OSTI)

    Kirby, B.; Hirst, E.

    1997-12-01T23:59:59.000Z

    Voltage control is accomplished by managing reactive power on an alternating-current power system. Reactive power can be produced and absorbed by both generation and transmission equipment. Reactive-power devices differ substantially in the magnitude and speed of response and in their capital costs. System operators, transmission owners, generators, customers, power marketers, and government regulators need to pay close attention to voltage control as they restructure the U.S. electricity industry. Voltage control can affect reliability and commerce in three ways: (1) Voltages must be maintained within an acceptable range for both customer and power-system equipment to function properly. (2) The movement of reactive power consumes transmission resources, which limits the ability to move real power and worsens congestion. (3) The movement of reactive power results in real-power losses. When generators are required to supply excessive amounts of reactive power, their real-power production must be curtailed. These opportunity costs are not currently compensated for in most regions. Current tariffs are based on embedded costs. These embedded-cost tariffs average about $0.51/MWh, equivalent to $1.5 billion annually for the United States as a whole. Although this cost is low when compared with the cost of energy, it still aggregates to a significant amount of money. This report takes a basic look at why the power system requires reactive power (an appendix explains the fundamentals of real and reactive power). The report then examines the various types of generation and transmission resources used to supply reactive power and to control voltage. Finally it discusses how these resources are deployed and paid for in several reliability regions around the country. As the U.S. electricity industry is restructured, the generation, transmission, and system-control equipment and functions that maintain voltages within the appropriate ranges are being deintegrated.

  15. Microwave pulse compression from a storage cavity with laser-induced switching

    DOE Patents [OSTI]

    Bolton, Paul R. (Menlo Park, CA)

    1992-01-01T23:59:59.000Z

    A laser-induced switch and a multiple cavity configuration are disclosed for producing high power microwave pulses. The microwave pulses are well controlled in wavelength and timing, with a quick rise time and a variable shape and power of the pulse. In addition, a method of reducing pre-pulse leakage to a low level is disclosed. Microwave energy is directed coherently to one or more cavities that stores the energy in a single mode, represented as a standing wave pattern. In order to switch the stored microwave energy out of the main cavity and into the branch waveguide, a laser-actuated switch is provided for the cavity. The switch includes a laser, associated optics for delivering the beam into the main cavity, and a switching gas positioned at an antinode in the main cavity. When actuated, the switching gas ionizes, creating a plasma, which becomes reflective to the microwave energy, changing the resonance of the cavity, and as a result the stored microwave energy is abruptly switched out of the cavity. The laser may directly pre-ionize the switching gas, or it may pump an impurity in the switching gas to an energy level which switches when a pre-selected cavity field is attained. Timing of switching the cavities is controlled by varying the pathlength of the actuating laser beam. For example, the pathlengths may be adjusted to output a single pulse of high power, or a series of quick lower power pulses.

  16. An Adaptive Voltage Control Algorithm with Multiple Distributed Energy

    SciTech Connect (OSTI)

    Li, Huijuan [University of Tennessee, Knoxville (UTK); Li, Fangxing [ORNL; Adhikari, Sarina [ORNL; Xu, Yan [ORNL; Rizy, D Tom [ORNL; Kueck, John D [ORNL

    2009-01-01T23:59:59.000Z

    Distributed energy resources (DE) with power electronics (PE) interfaces with the right control are capable of providing reactive power related ancillary services. Voltage regulation in particular has drawn much attention. In this paper the challenges to control multiple DEs to regulate the local voltage in distribution systems is addressed and a decentralized adaptive voltage control method is proposed. The simulation results in different system conditions show that this adaptive voltage control method is capable of satisfying the fast response speed requirement without causing oscillation or instability of the system. Since this method has high tolerance to the shortage of the system parameters and can be widely adaptive to the variable operation situations of the power systems, it is very suited for the utility application.

  17. IEEE 342 Node Low Voltage Networked Test System

    SciTech Connect (OSTI)

    Schneider, Kevin P.; Phanivong, Phillippe K.; Lacroix, Jean-Sebastian

    2014-07-31T23:59:59.000Z

    The IEEE Distribution Test Feeders provide a benchmark for new algorithms to the distribution analyses community. The low voltage network test feeder represents a moderate size urban system that is unbalanced and highly networked. This is the first distribution test feeder developed by the IEEE that contains unbalanced networked components. The 342 node Low Voltage Networked Test System includes many elements that may be found in a networked system: multiple 13.2kV primary feeders, network protectors, a 120/208V grid network, and multiple 277/480V spot networks. This paper presents a brief review of the history of low voltage networks and how they evolved into the modern systems. This paper will then present a description of the 342 Node IEEE Low Voltage Network Test System and power flow results.

  18. Robust adaptive control of switched systems

    E-Print Network [OSTI]

    El-Rifai, Khalid, 1979-

    2007-01-01T23:59:59.000Z

    In this thesis, robust adaptive controllers are developed for classes of switched nonlinear systems. Switched systems are those governed by differential equations, which undergo vector field switching due to sudden changes ...

  19. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Carter, J.G.; Hunter, S.R.

    1982-08-31T23:59:59.000Z

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF/sub 4/, C/sub 2/F/sub 6/, C/sub 3/F/sub 8/, n-C/sub 4/F/sub 10/, WF/sub 6/, (CF/sub 3/)/sub 2/S and (CF/sub 3/)/sub 2/O.

  20. In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices

    SciTech Connect (OSTI)

    Hong, D. S.; Wang, W. X.; Chen, Y. S., E-mail: yschen@aphy.iphy.ac.cn; Sun, J. R.; Shen, B. G. [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academic of Sciences, Beijing 100190 (China)

    2014-09-15T23:59:59.000Z

    The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.

  1. Spin switches for compact implementation of neuron and synapse

    SciTech Connect (OSTI)

    Quang Diep, Vinh, E-mail: vdiep@purdue.edu; Sutton, Brian; Datta, Supriyo [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Behin-Aein, Behtash [GLOBALFOUNDRIES, Inc., Sunnyvale, California 94085 (United States)

    2014-06-02T23:59:59.000Z

    Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

  2. Nanometer Resolution Imaging by SIngle Molecule Switching. |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanometer Resolution Imaging by SIngle Molecule Switching. Nanometer Resolution Imaging by SIngle Molecule Switching. Abstract: The fluorescence intensity of single molecules can...

  3. Hairpin DNA Switch for Ultrasensitive Spectrophotometric Detection...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hairpin DNA Switch for Ultrasensitive Spectrophotometric Detection of DNA Hybridization Based on Gold Nanoparticles and Enzyme Hairpin DNA Switch for Ultrasensitive...

  4. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton On Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY); Gara, Alan G. (Mount Kisco, NY); Giampapa, Mark E. (Irvington, NY); Heidelberger, Philip (Cortlandt Manor, NY); Steinmacher-Burow, Burkhard D. (Mount Kisco, NY); Takken, Todd E. (Mount Kisco, NY); Vranas, Pavlos M. (Bedford Hills, NY)

    2007-12-04T23:59:59.000Z

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  5. ''Smart'' watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, J.W.

    1991-10-01T23:59:59.000Z

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals. 21 figures.

  6. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton on Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY)

    2010-02-23T23:59:59.000Z

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  7. Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

    SciTech Connect (OSTI)

    Aslam, N.; Rodenbücher, C.; Szot, K.; Waser, R.; Hoffmann-Eifert, S., E-mail: su.hoffmann@fz-juelich.de [Peter-Grünberg Institute (PGI-7), Forschungszentrum Jülich and JARA-FIT, 52425 Jülich (Germany); Longo, V.; Roozeboom, F.; Kessels, W. M. M. [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

    2014-08-14T23:59:59.000Z

    The resistive switching (RS) properties of strontium titanate (Sr{sub 1+x}Ti{sub 1+y}O{sub 3+(x+2y)}, STO) based metal-oxide-metal structures prepared from industrial compatible processes have been investigated focusing on the effects of composition, microstructure, and device size. Metastable perovskite STO films were prepared on Pt-coated Si substrates utilizing plasma-assisted atomic layer deposition (ALD) from cyclopentadienyl-based metal precursors and oxygen plasma at 350?°C, and a subsequent annealing at 600?°C in nitrogen. Films of 15?nm and 12?nm thickness with three different compositions [Sr]/([Sr]?+?[Ti]) of 0.57 (Sr-rich STO), 0.50 (stoichiometric STO), and 0.46 (Ti-rich STO) were integrated into Pt/STO/TiN crossbar structures with sizes ranging from 100??m{sup 2} to 0.01??m{sup 2}. Nano-structural characterizations revealed a clear effect of the composition of the as-deposited STO films on their crystallization behavior and thus on the final microstructures. Local current maps obtained by local-conductivity atomic force microscopy were in good agreement with local changes of the films' microstructures. Correspondingly, also the initial leakage currents of the Pt/STO/TiN devices were affected by the STO compositions and by the films' microstructures. An electroforming process set the Pt/STO/TiN devices into the ON-state, while the forming voltage decreased with increasing initial leakage current. After a RESET process under opposite voltage has been performed, the Pt/STO/TiN devices showed a stable bipolar RS behavior with non-linear current-voltage characteristics for the high (HRS) and the low (LRS) resistance states. The obtained switching polarity and nearly area independent LRS values agree with a filamentary character of the RS behavior according to the valence change mechanism. The devices of 0.01??m{sup 2} size with a 12?nm polycrystalline stoichiometric STO film were switched at a current compliance of 50??A with voltages of about ±1.0?V between resistance states of about 40?k? (LRS) and 1 M? (HRS). After identification of the influences of the films' microstructures, i.e., grain boundaries and small cracks, the remaining RS properties could be ascribed to the effect of the [Sr]/([Sr]?+?[Ti]) composition of the ALD STO thin films.

  8. Alarm toe switch. [Patent application

    DOE Patents [OSTI]

    Ganyard, F.P.

    1980-11-18T23:59:59.000Z

    An alarm toe switch inserted within a shoe for energizing an alarm circuit in a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch.

  9. Towards forming-free resistive switching in oxygen engineered HfO{sub 2?x}

    SciTech Connect (OSTI)

    Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P.; Zaumseil, P.; Sowinska, M.; Walczyk, D. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Gloskovskii, A. [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

    2014-02-10T23:59:59.000Z

    We have investigated the resistive switching behavior in stoichiometric HfO{sub 2} and oxygen-deficient HfO{sub 2?x} thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO{sub 2?x} thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

  10. A Design-Oriented Framework to Determine the Parasitic Parameters of High Frequency Magnetics in Switching Power Supplies using Finite Element Analysis Techniques 

    E-Print Network [OSTI]

    Shadmand, Mohammad

    2012-07-16T23:59:59.000Z

    ____________ This thesis follows the style of IEEE Transactions on Power Electronics. 2 such as multi-winding transformers. More complex geometries indicate that it is almost impossible to derive the analytical equations that describe the behavior of magnetic... is the resistance of the winding, and Cs is the equivalent * Part of this chapter is taken with permission from ?FEA Tool Approach for Determination of Parasitic Capacitance of the Windings in High Frequency Coupled Inductors Filters? in IEEE Power...

  11. 4 ESS (trademark) switch electromagnetic-pulse assessment. Volume 2. Task 3 laboratory testing of the 4 ESS Switch. Final report

    SciTech Connect (OSTI)

    Not Available

    1989-12-01T23:59:59.000Z

    The 4ESS Switch was subjected to test sequences representative of electromagnetic stresses following a high-altitude nuclear blast. These laboratory tests revealed some potential equipment sensitivities requiring only minor modifications. With these modifications implemented, the 4 ESS Switch demonstrated considerable robustness in servicing calls following current injection stress. (jhd)

  12. Identifying Lights with their Switches Jayadev Misra

    E-Print Network [OSTI]

    Misra, Jayadev

    Identifying Lights with their Switches Jayadev Misra 09/07/2012 Problem Description Given are N switches and N lights where each switch controls exactly one light and each light is controlled by exactly of selecting some number of switches and turning them on, and, presumably, noting the lights that come

  13. Optimal Switching with Quasi-Left-Continuous Switching Costs that Can Change Sign

    E-Print Network [OSTI]

    Glendinning, Paul

    for the switching problem in terms of interconnected Snell envelopes. We also prove the existence of an optimalOptimal Switching with Quasi-Left-Continuous Switching Costs that Can Change Sign Randall Martyr of Mathematics, The University of Manchester #12;Optimal switching with quasi-left-continuous switching costs

  14. Surface and Structural Stabilities of Carbon Additives in High...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Structural Stabilities of Carbon Additives in High Voltage Lithium Ion Batteries. Surface and Structural Stabilities of Carbon Additives in High Voltage Lithium Ion Batteries....

  15. 2.3-MW Medium-Voltage, Three-Level Wind Energy Inverter Applying a Unique Bus Structure and 4.5-kV Si/SiC Hybrid Isolated Power Modules: Preprint

    SciTech Connect (OSTI)

    Erdman, W.; Keller, J.; Grider, D.; VanBrunt, E.

    2014-11-01T23:59:59.000Z

    A high-efficiency, 2.3-MW, medium-voltage, three-level inverter utilizing 4.5-kV Si/SiC (silicon carbide) hybrid modules for wind energy applications is discussed. The inverter addresses recent trends in siting the inverter within the base of multimegawatt turbine towers. A simplified split, three-layer laminated bus structure that maintains low parasitic inductances is introduced along with a low-voltage, high-current test method for determining these inductances. Feed-thru bushings, edge fill methods, and other design features of the laminated bus structure provide voltage isolation that is consistent with the 10.4-kV module isolation levels. Inverter efficiency improvement is a result of the (essential) elimination of the reverse recovery charge present in 4.5-kV Si PIN diodes, which can produce a significant reduction in diode turn-off losses as well as insulated-gate bipolar transistor (IGBT) turn-on losses. The hybrid modules are supplied in industry-standard 140 mm x 130 mm and 190 mm x 130 mm packages to demonstrate direct module substitution into existing inverter designs. A focus on laminated bus/capacitor-bank/module subassembly level switching performance is presented.

  16. Plasma flow switch experiment on Procyon

    SciTech Connect (OSTI)

    Benage, J.F. Jr.; Bowers, R.; Peterson, D. [and others

    1995-09-01T23:59:59.000Z

    This report presents the results obtained from a series of plasma flow switch experiments done on the Procyon explosive pulse power generator. These experiments involved switching into a fixed inductance dummy load and also into a dynamic implosion load. The results indicated that the switch did fairly well at switching current into the load, but the results for the implosion are more ambiguous. The results are compared to calculations and the implications for future plasma flow switch work are discussed.

  17. A NEW CROWBAR SYSTEM FOR THE PROTECTION OF HIGH POWER GRIDDED TUBES AND MICROWAVE DEVICES

    SciTech Connect (OSTI)

    S.G.E. PRONKO; T.E.HARRIS

    2001-04-01T23:59:59.000Z

    As part of the electron cyclotron heating (ECH) facility upgrade at the DIII-D National Fusion Facility, two 8.4 MW modulator/regulator power systems were designed and constructed (Ref. 1). Each power system uses a high power tetrode to modulate and regulate the cathode voltage for two 1 MW-class 110 GHz gyrotrons (Ref. 2). A critical element in the power system is the fault energy divertor, or crowbar switch, that protects the tetrode and the gyrotrons in the event of an arc fault. Traditionally, mercury filled ignitron switches are used for this application, but it was desired to eliminate hazardous materials and improve overall switching performance. The new crowbar switch system was required to meet the following requirements: Operating voltage: -105 kVdc; Peak current (750 ms e-fold): 1.6 kA; Follow-on current: <1 kA (25 ms); Charge transfer per shot: <15 Cb; and Turn-on time: <1 {micro}s. The switch that was chosen for the new design is a low pressure deuterium filled device, called a metal-arc thyratron, manufactured by Marconi Applied Technologies (Ref. 3). In addition to the new crowbar switch assembly, improved fault signal processing circuitry was developed. This new circuitry uses fiber-optics for signal and trigger transmission and a complex programmable logic device for high speed signal and logic processing. Two generations of metal-arc thyratrons have been commissioned in the two ECH power systems constructed at DIII-D. In the first, the crowbar system performed extremely well, meeting all of the operating requirements and demonstrating its ability to protect a 36 gauge copper wire from fusing (energy let-through <10 J). However, after accumulating over 500 shots, the metal-arc thyratrons lost their ability to reliably hold-off voltage. This problem was solved by Marconi with a design modification of the thyratron electrodes. The second generation tubes were installed in the second ECH power system. The crowbar system was fully commissioned and all of the performance requirements were satisfactorily achieved. The design of the crowbar switch and the fault signal processing system and their performance will be presented in this paper.

  18. New Switches for Utility-Scale Inverters: First In-Class Demonstration of a Completely New Type of SiC Bipolar Switch (15kV-20kV) for Utility-Scale Inverters

    SciTech Connect (OSTI)

    None

    2011-12-31T23:59:59.000Z

    Solar ADEPT Project: The SiCLAB is developing a new power switch for utility-scale PV inverters that would improve the performance and significantly reduce the size, weight, and energy loss of PV systems. A power switch controls the electrical energy flowing through an inverter, which takes the electrical current from a PV solar panel and converts it into the type and amount of electricity that is compatible with the electric grid. SiCLAB is using silicon carbide (SiC) semiconductors in its new power switches, which are more efficient than the silicon semiconductors used to conduct electricity in most conventional power switches today. Switches with SiC semiconductors can operate at much higher temperatures, as well as higher voltage and power levels than silicon switches. SiC-based power switches are also smaller than those made with silicon alone, so they result in much smaller and lighter electrical devices. In addition to their use in utility-scale PV inverters, SiCLAB’s new power switches can also be used in wind turbines, railways, and other smart grid applications.

  19. 2004 URSI Meeting, 5-8 January 2004, at the University of Colorado, Boulder, Colorado, USA. Polyimide Planarization for RF-MEMS Switch on PCB

    E-Print Network [OSTI]

    De Flaviis, Franco

    Polyimide Planarization for RF-MEMS Switch on PCB Bahram Ghodsian, C. Jung, B. Cetiner and F. De Flaviis it maintains the high RF-performance of switches. The fabrication process uses polyimide to planerize

  20. Dynamic Voltage Regulation Using Distributed Energy Resources

    SciTech Connect (OSTI)

    Xu, Yan [ORNL; Rizy, D Tom [ORNL; Li, Fangxing [ORNL; Kueck, John D [ORNL

    2007-01-01T23:59:59.000Z

    Many distributed energy resources (DE) are near load centres and equipped with power electronics converters to interface with the grid, therefore it is feasible for DE to provide ancillary services such as voltage regulation, nonactive power compensation, and power factor correction. A synchronous condenser and a microturbine with an inverter interface are implemented in parallel in a distribution system to regulate the local voltage. Voltage control schemes of the inverter and the synchronous condenser are developed. The experimental results show that both the inverter and the synchronous condenser can regulate the local voltage instantaneously, while the dynamic response of the inverter is faster than the synchronous condenser; and that integrated voltage regulation (multiple DE perform voltage regulation) can increase the voltage regulation capability, increase the lifetime of the equipment, and reduce the capital and operation costs.

  1. Bi-directional power control system for voltage converter

    DOE Patents [OSTI]

    Garrigan, N.R.; King, R.D.; Schwartz, J.E.

    1999-05-11T23:59:59.000Z

    A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals. 10 figs.

  2. Bi-directional power control system for voltage converter

    DOE Patents [OSTI]

    Garrigan, Neil Richard (Niskayuna, NY); King, Robert Dean (Schenectady, NY); Schwartz, James Edward (Slingerlands, NY)

    1999-01-01T23:59:59.000Z

    A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals.

  3. Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron

    SciTech Connect (OSTI)

    Reghu, T.; Mandloi, V.; Shrivastava, Purushottam [Pulsed High Power Microwave Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, M.P. (India)] [Pulsed High Power Microwave Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, M.P. (India)

    2014-05-15T23:59:59.000Z

    Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses of 1.6 ms pulse width, 80 ?s rise time, and 70 ?s fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.

  4. Voltage Vehicles | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga,planningFlowmeterUtah: Energydba Vision Motor CorpEIAVogtVoltage

  5. Design and Evaluation of a 42-V Automotive Alternator With Integrated Switched-Mode Rectifier

    E-Print Network [OSTI]

    Tang, Sai Chun

    This paper presents techniques for the design of high-power Lundell alternators with integrated switched-mode rectifiers. A multisection stator winding and interleaved rectifier arrangement is introduced that enables high ...

  6. VOLTAGE COLLAPSE AND TRANSIENT ENERGY FUNCTION ANALYSES OF AC/DC SYSTEMS

    E-Print Network [OSTI]

    Cañizares, Claudio A.

    for power system dynamic models, including a third order representation of high voltage direct current (HVDC power limits, HVDC firing angle limits and voltage dependent current order limits (VDCOL) are shown the derivation of individual component Lyapunov functions for simplified models of HVDC links connected

  7. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  8. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  9. Elastomeric organic material for switching application

    SciTech Connect (OSTI)

    Shiju, K., E-mail: shijuvenus@gmail.com, E-mail: pravymon@gmail.com, E-mail: ppredeep@gmail.com; Praveen, T., E-mail: shijuvenus@gmail.com, E-mail: pravymon@gmail.com, E-mail: ppredeep@gmail.com; Preedep, P., E-mail: shijuvenus@gmail.com, E-mail: pravymon@gmail.com, E-mail: ppredeep@gmail.com [Laboratory for Molecular Photonics and Electronics (LAMP), Department of Physics, National Institute of Technology, Calicut, Kerala, 673601 (India)

    2014-10-15T23:59:59.000Z

    Organic Electronic devices like OLED, Organic Solar Cells etc are promising as, cost effective alternatives to their inorganic counterparts due to various reasons. However the organic semiconductors currently available are not attractive with respect to their high cost and intricate synthesis protocols. Here we demonstrate that Natural Rubber has the potential to become a cost effective solution to this. Here an attempt has been made to fabricate iodine doped poly isoprene based switching device. In this work Poly methyl methacrylate is used as dielectric layer and Aluminium are employed as electrodes.

  10. Resistive switching and threshold switching behaviors in La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} ceramics

    SciTech Connect (OSTI)

    Wang, S. Y.; Qiu, Xue; Feng, Yu; Hou, X. G.; Yu, D. S.; Li, D. J. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, W. F. [Tianjin Key laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Gao, J. [Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

    2012-08-01T23:59:59.000Z

    The effects of cobalt doping on the electrical conductivity of La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} (LBFCO, x = 0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 Degree-Sign C and 80 Degree-Sign C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.

  11. Voltage controlled MESFET pulse shape generator

    SciTech Connect (OSTI)

    Burkhart, S.C.

    1994-10-26T23:59:59.000Z

    A programmable pulse shape generator capable of producing pulse shapes for Nova and Beamlet has been designed and simulated using the circuit code SPICE. The design utilizes power MESFETS, which are commonly used in microwave amplifiers. The pulse shape is varied by setting a bias voltage on each in a chain of MESFETS with a 200 ps temporal resolution. The electrical pulse then drives an integrated electro-optic modulator similar to what is on Beamlet. Pulse shapes 22 and 25, used on Nova, have been generated by this design. There is no fundamental barrier to making such a pulse generator for use on the National Ignition Facility. In fact, the longer time scales on the NIF pulse will ease the high speed requirements of the pulse shape generator allowing the use of less expensive components. The next step will be to build a prototype circuit for initial testing on Beamlet and Nova.

  12. Comparison of 3 Self-Starting Step-Up DC:DC Converter Topologies for Harvesting Energy from Low-Voltage and Low-Power Microbial Fuel Cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -Voltage and Low-Power Microbial Fuel Cells Nicolas Degrenne1, Bruno Allard2, François Buret1, Florent Morel1.surname@ec-lyon.fr, 2firstname.surname@insa-lyon.fr Keywords «Fuel cell system», , «switched-mode power supply are made according to specifications issued from the stringent characteristics of microbial fuel cells

  13. Minimizing Simultaneous Switching Noise at Reduced Power with Power Transmission Lines for

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    Minimizing Simultaneous Switching Noise at Reduced Power with Power Transmission Lines for High] by replacing the power plane structure with a power transmission line (PTL). In this paper, a new power switching noise; power transmission line I. INTRODUCTION The rapid increase in data rates and transistor

  14. High precision triangular waveform generator

    DOE Patents [OSTI]

    Mueller, Theodore R. (Oak Ridge, TN)

    1983-01-01T23:59:59.000Z

    An ultra-linear ramp generator having separately programmable ascending and descending ramp rates and voltages is provided. Two constant current sources provide the ramp through an integrator. Switching of the current at current source inputs rather than at the integrator input eliminates switching transients and contributes to the waveform precision. The triangular waveforms produced by the waveform generator are characterized by accurate reproduction and low drift over periods of several hours. The ascending and descending slopes are independently selectable.

  15. HIGH-CURRENT COLD CATHODE EMPLOYING DIAMOND AND RELATED MATERIALS

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2014-10-22T23:59:59.000Z

    The essence of this project was for diamond films to be deposited on cold cathodes to improve their emission properties. Films with varying morphology, composition, and size of the crystals were deposited and the emission properties of the cathodes that utilize such films were studied. The prototype cathodes fabricated by the methods developed during Phase I were tested and evaluated in an actual high-power RF device during Phase II. These high-power tests used the novel active RF pulse compression system and the X-band magnicon test facility at US Naval Research Laboratory. In earlier tests, plasma switches were employed, while tests under this project utilized electron-beam switching. The intense electron beams required in the switches were supplied from cold cathodes embodying diamond films with varying morphology, including uncoated molybdenum cathodes in the preliminary tests. Tests with uncoated molybdenum cathodes produced compressed X-band RF pulses with a peak power of 91 MW, and a maximum power gain of 16.5:1. Tests were also carried out with switches employing diamond coated cathodes. The pulse compressor was based on use of switches employing electron beam triggering to effect mode conversion. In experimental tests, the compressor produced 165 MW in a ~ 20 ns pulse at ~18× power gain and ~ 140 MW at ~ 16× power gain in a 16 ns pulse with a ~ 7 ns flat-top. In these tests, molybdenum blade cathodes with thin diamond coatings demonstrated good reproducible emission uniformity with a 100 kV, 100 ns high voltage pulse. The new compressor does not have the limitations of earlier types of active pulse compressors and can operate at significantly higher electric fields without breakdown.

  16. Group 3: Humidity, Temperature, and Voltage (Presentation)

    SciTech Connect (OSTI)

    Wohlgemuth, J.

    2013-05-01T23:59:59.000Z

    Group 3 is chartered to develop accelerated stress tests that can be used as comparative predictors of module lifetime versus stresses associated with humidity, temperature and voltage.

  17. Sacramento Area Voltage Support - Environment - Sierra Nevada...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (SMUD), Roseville Electric (Roseville), and the California Independent System Operator (ISO) grid. Western prepared a Sacramento Voltage Support (SVS) Draft Environmental Impact...

  18. Capturing power at higher voltages from arrays of microbial fuel cells without voltage reversal

    E-Print Network [OSTI]

    is too low to be used directly for many practical applications. For example, a single light emitting diode (LED) requires a minimum voltage of 2 V.2 Thus, effective methods of boosting MFC voltages

  19. The Constant Voltage Transformer (CVT) for Mitigating Effects of Voltage Sags on Industrial Equipment

    E-Print Network [OSTI]

    Ferraro, R. J.; Osborne, R.; Stephens, R.

    ) an increase in loads that use power electronics in some type of power conversion configuration [1][2]. This paper presents applications of the constant-voltage transformer (CVT) for mitigating the effects of electric service voltage sags on industrial...

  20. Ultrafast thermally induced magnetic switching in synthetic ferrimagnets

    SciTech Connect (OSTI)

    Evans, Richard F. L., E-mail: richard.evans@york.ac.uk; Ostler, Thomas A.; Chantrell, Roy W. [Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Radu, Ilie [Institut für Methoden und Instrumentierung der Forschung mit Synchrotronstrahlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Rasing, Theo [Radboud University, Institute for Molecules and Materials, Heyendaalsewg 135, 6525 AJ Nijmegen (Netherlands)

    2014-02-24T23:59:59.000Z

    Synthetic ferrimagnets are composite magnetic structures formed from two or more anti-ferromagnetically coupled magnetic sublattices with different magnetic moments. Here, we report on atomistic spin simulations of the laser-induced magnetization dynamics on such synthetic ferrimagnets and demonstrate that the application of ultrashort laser pulses leads to sub-picosecond magnetization dynamics and all-optical switching in a similar manner as in ferrimagnetic alloys. Moreover, we present the essential material properties for successful laser-induced switching, demonstrating the feasibility of using a synthetic ferrimagnet as a high density magnetic storage element without the need of a write field.