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Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Compact high voltage solid state switch  

DOE Patents [OSTI]

A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

Glidden, Steven C.

2003-09-23T23:59:59.000Z

2

A Comparison of High-Voltage Switches  

SciTech Connect (OSTI)

This report summarizes our work on high-voltage switches during the past few years. With joint funding from the Department of Energy (DOE) and the Department of Defense (DOD), we tested a wide variety of switches to a common standard. This approach permitted meaningful comparisons between disparate switches. Most switches were purchased from commercial sources, though some were experimental devices. For the purposes of this report, we divided the switches into three generic types (gas, vacuum, and semiconductor) and selected data that best illustrates important strengths and weaknesses of each switch type. Test techniques that indicate the state of health of the switches are emphasized. For example, a good indicator of residual gas in a vacuum switch is the systematic variation of the switching delay in response to changes in temperature and/or operating conditions. We believe that the presentation of this kind of information will help engineers to select and to test switches for their particular applications. Our work was limited to switches capable of driving slappers. Also known as exploding-foil initiators, slappers are detonators that initiate a secondary explosive by direct impact with a small piece of matter moving at the detonation velocity (several thousands of meters per second). A slapper is desirable for enhanced safety (no primary explosive), but it also places extra demands on the capacitor-discharge circuit to deliver a fast-rising current pulse (greater than 10 A/ns) of several thousand amperes. The required energy is substantially less than one joule; but this energy is delivered in less than one microsecond, taking the peak power into the megawatt regime. In our study, the switches operated in the 1 kV to 3 kV range and were physically small, roughly 1 cm{sup 3} or less. Although a fuze functions only once in actual use, multiple-shot capability is important for production testing and for research work. For this reason, we restricted this report to multiple-shot switches. Furthermore, our work included only switches with submicrosecond timing precision, thereby excluding mechanical switches.

Chu, K.W.; Scott, G.L.

1999-02-01T23:59:59.000Z

3

Optically triggered high voltage switch network and method for switching a high voltage  

DOE Patents [OSTI]

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

1993-01-19T23:59:59.000Z

4

High-speed, sub-pull-in voltage MEMS switching.  

SciTech Connect (OSTI)

We have proposed and demonstrated MEMS switching devices that take advantage of the dynamic behavior of the MEMS devices to provide lower voltage actuation and higher switching speeds. We have explored the theory behind these switching techniques and have demonstrated these techniques in a range of devices including MEMS micromirror devices and in-plane parallel plate MEMS switches. In both devices we have demonstrated switching speeds under one microsecond which has essentially been a firm limit in MEMS switching. We also developed low-loss silicon waveguide technology and the ability to incorporate high-permittivity dielectric materials with MEMS. The successful development of these technologies have generated a number of new projects and have increased both the MEMS switching and optics capabilities of Sandia National Laboratories.

Spahn, Olga Blum; Brewer, Steven; Olsson, Roy H.; Bogart, Gregory R.; Luck, David L.; Watts, Michael R.; Shaw, Michael J.; Nielson, Gregory N.; Resnick, Paul James; Tigges, Christopher P.; Grossetete, Grant David

2008-01-01T23:59:59.000Z

5

Optically initiated silicon carbide high voltage switch  

DOE Patents [OSTI]

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders; David M. (Livermore, CA)

2011-02-22T23:59:59.000Z

6

E-beam high voltage switching power supply  

DOE Patents [OSTI]

A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

1996-01-01T23:59:59.000Z

7

E-beam high voltage switching power supply  

DOE Patents [OSTI]

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

Shimer, D.W.; Lange, A.C.

1996-10-15T23:59:59.000Z

8

High voltage photo switch package module  

DOE Patents [OSTI]

A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

2014-02-18T23:59:59.000Z

9

E-beam high voltage switching power supply  

DOE Patents [OSTI]

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

Shimer, D.W.; Lange, A.C.

1997-03-11T23:59:59.000Z

10

E-beam high voltage switching power supply  

DOE Patents [OSTI]

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

1997-01-01T23:59:59.000Z

11

Switch contact device for interrupting high current, high voltage, AC and DC circuits  

DOE Patents [OSTI]

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04T23:59:59.000Z

12

Optically-initiated silicon carbide high voltage switch  

DOE Patents [OSTI]

An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders, David M. (Livermore, CA)

2012-02-28T23:59:59.000Z

13

A Fusing Switch for Fault Suppression in the SNS High Voltage Converter Modulators  

SciTech Connect (OSTI)

The High Voltage Converter Modulators (HVCMs) at the Spallation Neutron Source (SNS) have operated in excess of a combined 250,000 hours. Performance and reliability improvements to the HVCM are ongoing to increase modulator availability as accelerator system demands increase. There is a relatively large amount of energy storage in the HVCMs, {approx}180 kJ. This energy has the potential to dump into unsuppressed faults, cause damage, and increase the time to repair. The 'fusing switch' concept involves isolation of this stored energy from the location of the most common faults. This paper introduces this concept and its application to the HVCMs.

Kemp, Mark A.; Burkhart, Craig; Nguyen, Minh N.; /SLAC; Anderson, David E.; /Oak Ridge

2009-08-03T23:59:59.000Z

14

Redesign of the H-Bridge Switch Plate of the SNS High Voltage Converter Modulator  

SciTech Connect (OSTI)

The 1-MW High Voltage Converter Modulators [1] have operated in excess of 250,000 hours at the Spallation Neutron Source. Increased demands on the accelerator performance require increased modulator reliability. An effort is underway at SLAC National Accelerator Laboratory to redesign the modulator H-bridge switch plate with the goals of increasing reliability and performance [2]. The major difference between the SLAC design and the existing design is the use of press-pack IGBTs. Compared to other packaging options, these IGBTs have been shown to have increased performance in pulsed-power applications, have increased cooling capability, and do not fragment and disassemble during a fault event. An overview of the SLAC switch plate redesign is presented. Design steps including electrical modeling of the modulator and H-bridge, development of an integrated IGBT clamping mechanism, and fault tests are discussed. Experimental results will be presented comparing electrical performance of the SLAC switch plate to the existing switchplate under normal and fault conditions.

Kemp, M.A.; Burkhart, C.; Nguyen, M.N.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

15

High voltage pulse conditioning  

DOE Patents [OSTI]

Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

Springfield, Ray M. (Sante Fe, NM); Wheat, Jr., Robert M. (Los Alamos, NM)

1990-01-01T23:59:59.000Z

16

Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application  

SciTech Connect (OSTI)

In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid inner surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.

Zhang, Hong-bo, E-mail: walkman67@163.com; Liu, Jin-liang [College of Opto-electronic Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)] [College of Opto-electronic Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

2014-04-15T23:59:59.000Z

17

Minimizing Simultaneous Switching Noise at Reduced Power with Constant-Voltage Power Transmission Lines for High-Speed Signaling  

E-Print Network [OSTI]

plane structure with a power transmission line (PTL). In this paper, a new power delivery scheme called Constant Voltage Power Transmission Line (CV-PTL) is shown to significantly reduce switching noise while, and measurements. Keywords Power delivery network, simultaneous switching noise, power transmission line 1

Swaminathan, Madhavan

18

Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces  

DOE Patents [OSTI]

An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

Sullivan, James S.; Hawkins, Steven A.

2012-09-04T23:59:59.000Z

19

Low power, scalable multichannel high voltage controller  

DOE Patents [OSTI]

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Stamps, James Frederick (Livermore, CA); Crocker, Robert Ward (Fremont, CA); Yee, Daniel Dadwa (Dublin, CA); Dils, David Wright (Fort Worth, TX)

2006-03-14T23:59:59.000Z

20

Low power, scalable multichannel high voltage controller  

DOE Patents [OSTI]

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Stamps, James Frederick (Livermore, CA); Crocker, Robert Ward (Fremont, CA); Yee, Daniel Dadwa (Dublin, CA); Dils, David Wright (Fort Worth, TX)

2008-03-25T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

High Voltage Safety Act  

Broader source: Energy.gov [DOE]

The purpose of the High Voltage Safety Act is to prevent injury to persons and property and interruptions of utility service resulting from accidental or inadvertent contact with high-voltage...

22

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators  

DOE Patents [OSTI]

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 12 figs.

Caporaso, G.J.; Sampayan, S.E.; Kirbie, H.C.

1998-10-13T23:59:59.000Z

23

ABBGroup-1-High voltage lab  

E-Print Network [OSTI]

oscillations are due to travelling waves in the heating volume. #12;©ABBGroup-9- 3-Sep-07 2. High voltage phase interrupts the injected current, it is stressed by the transient recovery voltage (TRV) oscillating©ABBGroup-1- 3-Sep-07 High voltage lab Research on high voltage gas circuit breakers Nils P. Basse

Basse, Nils Plesner

24

High voltage DC power supply  

DOE Patents [OSTI]

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

Droege, T.F.

1989-12-19T23:59:59.000Z

25

High voltage DC power supply  

DOE Patents [OSTI]

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

Droege, Thomas F. (Batavia, IL)

1989-01-01T23:59:59.000Z

26

Multi-gap high impedance plasma opening switch  

DOE Patents [OSTI]

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

Mason, R.J.

1996-10-22T23:59:59.000Z

27

Multi-gap high impedance plasma opening switch  

DOE Patents [OSTI]

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

Mason, Rodney J. (Los Alamos, NM)

1996-01-01T23:59:59.000Z

28

High voltage photovoltaic power converter  

DOE Patents [OSTI]

An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

Haigh, Ronald E. (Arvada, CO); Wojtczuk, Steve (Cambridge, MA); Jacobson, Gerard F. (Livermore, CA); Hagans, Karla G. (Livermore, CA)

2001-01-01T23:59:59.000Z

29

High Voltage DC Transmission 2 1.0 Introduction  

E-Print Network [OSTI]

1 High Voltage DC Transmission 2 1.0 Introduction Interconnecting HVDC within an AC system requires on use of switching devices collectively referred to in the HVDC community as valves. Valves may be non. Fig. 1 There have been three types of devices for implementing HVDC converter circuits: mercury

McCalley, James D.

30

Performance Analysis of a Hybrid Asymmetric Multilevel Inverter for High Voltage Active Power Filter Applications  

E-Print Network [OSTI]

Performance Analysis of a Hybrid Asymmetric Multilevel Inverter for High Voltage Active Power voltage-source inverters connected in series (known as cascaded hybrid asymmetric multilevel inverter scheme is developed to allow the operation of the inverter modules at different voltages and switching

Catholic University of Chile (Universidad Católica de Chile)

31

High Voltage Electrolyte for Lithium Batteries  

Broader source: Energy.gov (indexed) [DOE]

battery using high voltage high energy cathode materials to enable large-scale, cost competitive production of the next generation of electric-drive vehicles. To...

32

High voltage load resistor array  

DOE Patents [OSTI]

A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

Lehmann, Monty Ray (Smithfield, VA)

2005-01-18T23:59:59.000Z

33

High voltage electrical amplifier having a short rise time  

DOE Patents [OSTI]

A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

Christie, David J. (Pleasanton, CA); Dallum, Gregory E. (Livermore, CA)

1991-01-01T23:59:59.000Z

34

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs  

DOE Patents [OSTI]

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

Shimer, D.W.; Lange, A.C.

1995-05-23T23:59:59.000Z

35

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs  

DOE Patents [OSTI]

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

1995-01-01T23:59:59.000Z

36

Hybrid switch for resonant power converters  

DOE Patents [OSTI]

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

Lai, Jih-Sheng; Yu, Wensong

2014-09-09T23:59:59.000Z

37

Dual Low Voltage IC Based High and Low Side Yan Yin, Regan Zane  

E-Print Network [OSTI]

drivers are required in most switching power converters to provide on/off control of both ground referenced and floating switches. The drivers are required to provide sufficient current to the gates to meet and low-side gate drivers; dual low voltage ICs; capacitive coupling; charge pump I. INTRODUCTION High

38

High-voltage crowbar protection for the large CDF axial drift chamber  

SciTech Connect (OSTI)

The Central Outer Tracker (COT) is a big cylindrical drift chamber that provides charged particle tracking for the Collider Detector at Fermilab experiment. To protect the COT, the large stored energy in the high voltage system needs to be removed quickly when a problem is sensed. For the high voltage switch, a special-order silicon-controlled-rectifier was chosen over more readily available integrated gate bipolar transistors because of layout and reliability questions. The considerations concerning the high voltage switch, the prototype performance, and the experience of more than two years of running are described.

Binkley, M.; Mukherjee, A.; Stuermer, W.; Wagner, R.L.; /Fermilab

2004-01-01T23:59:59.000Z

39

Advanced Gate Drive for the SNS High Voltage Converter Modulator  

SciTech Connect (OSTI)

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

40

High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

High-Voltage Solid Polymer Batteries for Electric Drive Vehicles High-Voltage Solid Polymer Batteries for Electric Drive Vehicles 2012 DOE Hydrogen and Fuel Cells Program and...

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Vehicle Technologies Office Merit Review 2014: High-Voltage Solid...  

Broader source: Energy.gov (indexed) [DOE]

High-Voltage Solid Polymer Batteries for Electric Drive Vehicles Vehicle Technologies Office Merit Review 2014: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

42

High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...  

Broader source: Energy.gov (indexed) [DOE]

High-Voltage Solid Polymer Batteries for Electric Drive Vehicles High-Voltage Solid Polymer Batteries for Electric Drive Vehicles 2013 DOE Hydrogen and Fuel Cells Program and...

43

Electro-optic high voltage sensor  

DOE Patents [OSTI]

A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

Davidson, James R.; Seifert, Gary D.

2003-09-16T23:59:59.000Z

44

Modular high voltage power supply for chemical analysis  

DOE Patents [OSTI]

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

2008-07-15T23:59:59.000Z

45

Modular high voltage power supply for chemical analysis  

SciTech Connect (OSTI)

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

2010-05-04T23:59:59.000Z

46

Modular high voltage power supply for chemical analysis  

DOE Patents [OSTI]

A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Stamps, James F. (Livermore, CA); Yee, Daniel D. (Dublin, CA)

2007-01-09T23:59:59.000Z

47

Control of Analyte Electrolysis in Electrospray Ionization Mass Spectrometry Using Repetitively Pulsed High Voltage  

SciTech Connect (OSTI)

Analyte electrolysis using a repetitively pulsed high voltage ion source was investigated and compared to that using a regular, continuously operating direct current high voltage ion source in electrospray ionization mass spectrometry. The extent of analyte electrolysis was explored as a function of the length and frequency of the high voltage pulse using the model compound reserpine in positive ion mode. Using +5 kV as the maximum high voltage amplitude, reserpine was oxidized to its 2, 4, 6 and 8-electron oxidation products when direct current high voltage was employed. In contrast, when using a pulsed high voltage, oxidation of reserpine was eliminated by employing the appropriate high voltage pulse length and frequency. This effect was caused by inefficient mass transport of the analyte to the electrode surface during the duration of the high voltage pulse and the subsequent relaxation of the emitter electrode/ electrolyte interface during the time period when the high voltage was turned off. This mode of ESI source operation allows for analyte electrolysis to be quickly and simply switched on or off electronically via a change in voltage pulse variables.

Kertesz, Vilmos [ORNL; Van Berkel, Gary J [ORNL

2011-01-01T23:59:59.000Z

48

Modeling Combustion Control for High Power Diesel Mode Switching...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Combustion Control for High Power Diesel Mode Switching Modeling Combustion Control for High Power Diesel Mode Switching Poster presentation given at the 16th Directions in...

49

High voltage overhead long transmission line design and fault analysis.  

E-Print Network [OSTI]

??The goal of this project is to design a reliable high voltage overhead long transmission line that satisfies specific design criteria including voltage regulation, efficiency,… (more)

Elzain, Mohamed Ali

2011-01-01T23:59:59.000Z

50

Abstract --When a real time digital simulator, emulating a switched circuit such as a voltage source converter, is interfaced  

E-Print Network [OSTI]

1 Abstract -- When a real time digital simulator, emulating a switched circuit such as a voltage source converter, is interfaced with a digital controller, the controller's firing signals may. Incorrect power flow due to inaccurate firing times and controller errors. 2. Switching jitter due

Lehn, Peter W.

51

Explosive-driven, high speed, arcless switch  

DOE Patents [OSTI]

An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

Skogmo, P.J.; Tucker, T.J.

1986-05-02T23:59:59.000Z

52

Explosive-driven, high speed, arcless switch  

DOE Patents [OSTI]

An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed. 7 figs.

Skogmo, P.J.; Tucker, T.J.

1987-07-14T23:59:59.000Z

53

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp Petar Ljusev, Michael A.E. Andersen  

E-Print Network [OSTI]

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp Petar discusses the advantages and problems when implementing direct energy conversion switching-mode audio power on a direct-conversion switching-mode audio power ampli- fier with active capacitive voltage clamp

54

A SCR SWITCHED CAPACITOR VOLTAGE REGULATOR FOR 150 kV NEUTRAL BEAM POWER SUPPLY  

E-Print Network [OSTI]

et a1. , "150-kV, 80-A Solid State Power Supply for Neutral100% solid state and provides 1% regulation at power levelssolid state high voltage re- gulator. The block diagram of the power

Milnes, K.A.

2011-01-01T23:59:59.000Z

55

High-current, fast-switching transistor development  

SciTech Connect (OSTI)

Work that shows how the results obtained under a previous contract (NAS3-18916) have been applied to a larger-diameter (33-mm) transistor are described. An improved base contact for equalizing the base-emitter voltage at high currents has been developed along with an improved emitter contact preform which increases the silicon area available for current conduction. The electrical performance achieved is consistent with the proposed optimum design. The device design, wafer-processing techniques, and various measurements which include forward SOA, dc characteristics, and switching times are described.

Hower, P.L.

1981-03-15T23:59:59.000Z

56

Electro-optic high voltage sensor  

DOE Patents [OSTI]

A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

Davidson, James R. (Idaho Falls, ID); Seifert, Gary D. (Idaho Falls, ID)

2002-01-01T23:59:59.000Z

57

Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion  

SciTech Connect (OSTI)

ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

None

2010-09-01T23:59:59.000Z

58

Structural Optimization of High Voltage Transmission Line Towers considering  

E-Print Network [OSTI]

Structural Optimization of High Voltage Transmission Line Towers considering Continuum and Discrete/or to common designs largely repeated (e.g. automotive compo- nents), and high voltage transmission towers can than conventional designs of high voltage transmission line towers. The optimization model proposed

Colominas, Ignasi

59

Safe epoxy encapsulant for high voltage magnetics  

SciTech Connect (OSTI)

This paper describes the use of Formula 456, an aliphatic amine cured epoxy for impregnating coils and high voltage transformers. Sandia has evaluated a number of MDA-free epoxy encapsulants which relied on either anhydride or other aromatic amine curing agents. The use of aliphatic amine curing agents was more recently evaluated and has resulted in the definition of Formula 456 resin. Methylene dianiline (MDA) has been used for more than 20 years as the curing agent for various epoxy formulations throughout the Department of Energy and much of industry. Sandia National Laboratories began the process of replacing MDA with other formulations because of regulations imposed by OSHA on the use of MDA. OSHA has regulated MDA because it is a suspect carcinogen. Typically the elimination of OSHA-regulated materials provides a rare opportunity to qualify new formulations in a range of demanding applications. It was important to take full advantage of that opportunity, although the associated materials qualification effort was costly. Small high voltage transformers are one of those demanding applications. The successful implementation of the new formulation for high reliability transformers will be described. The test results that demonstrate the parts are qualified for use in DOE weapon systems will be presented.

Sanchez, R.O.; Archer, W.E.

1998-01-01T23:59:59.000Z

60

Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices  

SciTech Connect (OSTI)

Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.

Seo, Juhee [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of); Ahn, Hyung-Woo [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Material Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Shin, Sang-yeol [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Korea Aerospace University, Goyang 412-791 (Korea, Republic of); Cheong, Byung-ki; Lee, Suyoun, E-mail: slee-eels@kist.re.kr [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

2014-04-14T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

A Charge Pump that Generates Negative High Voltage with Variable Voltage , Eugene Ivanova,  

E-Print Network [OSTI]

A Charge Pump that Generates Negative High Voltage with Variable Voltage Gain Jun Zhaob, , Eugene, Massachusetts 02115, U.S.A. Abstract A cross-coupled structure based charge pump that generates negative high. The proposed negative charge pump is designed to deliver 40 uA with a wide supply range from 2.5V to 5.5V using

Ayers, Joseph

62

Distributed Voltage and Current Control of Multi-Terminal High-Voltage Direct  

E-Print Network [OSTI]

}@kth.se.) Abstract: High-voltage direct current (HVDC) is a commonly used technology for long-distance power for multi-terminal HVDC (MTDC) systems is proposed. Under certain conditions on the controller gains factor behind long-distance power transmission. High-voltage direct current (HVDC) is a commonly used

Dimarogonas, Dimos

63

Design and analysis of a zero-voltage switching scheme for a dc- to-dc converter  

E-Print Network [OSTI]

&rt~RV, Page 40 Voltage across inain switch in a clc cliopper clrive with zeio-voltage s w 1 't C 1 1 i l1 g , &g CHAPTER I INTRODUCTION A. Introduction In general terms, power electronics is concerned wit, h the conversion and control of electrical... power (dc or ac) at variable voltage and variable frequency. With the development of power semi- conductor devices such as silicon-controlled rectifiers (SCR's), gate-turn-off thyris- tors (GTO's), bipolar junction transistors (BJT's), metal...

Arun, G.

1992-01-01T23:59:59.000Z

64

Light-weight DC to very high voltage DC converter  

DOE Patents [OSTI]

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

Druce, Robert L. (Union City, CA); Kirbie, Hugh C. (Dublin, CA); Newton, Mark A. (Livermore, CA)

1998-01-01T23:59:59.000Z

65

Light-weight DC to very high voltage DC converter  

DOE Patents [OSTI]

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30T23:59:59.000Z

66

Lockout device for high voltage circuit breaker  

SciTech Connect (OSTI)

An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the respective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

Kozlowski, L.J.; Shirey, L.A.

1993-01-26T23:59:59.000Z

67

Lockout device for high voltage circuit breaker  

DOE Patents [OSTI]

An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the repsective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

Kozlowski, Lawrence J. (New Kensington, PA); Shirey, Lawrence A. (North Huntingdon, PA)

1993-01-01T23:59:59.000Z

68

Lookout device for high voltage circuit breaker  

SciTech Connect (OSTI)

An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the respective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

Kozlowski, L.J.; Shirey, L.A.

1991-12-31T23:59:59.000Z

69

Nanoscale Morphological and Chemical Changes of High Voltage...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nanoscale Morphological and Chemical Changes of High Voltage Lithium-Manganese Rich NMC Composite Cathodes with Cycling Friday, August 29, 2014 Renewable energy is critical for the...

70

High Voltage Electrolytes for Li-ion Batteries  

Broader source: Energy.gov (indexed) [DOE]

or otherwise restricted information High Voltage Electrolytes for Li-ion Batteries Vehicle Technologies Program 2 Overview * Start: Sep 2008 * End: Sep 2011 * 20 %...

71

Modeling Combustion Control for High Power Diesel Mode Switching  

Broader source: Energy.gov (indexed) [DOE]

and Emissions Research Conference 2010 Modeling Combustion Control for High Power Diesel Mode Switching P-20 Motivation * High power LTC-diesel mode operation * Transient...

72

High-voltage field effect transistors with wide-bandgap ?-Ga{sub 2}O{sub 3} nanomembranes  

SciTech Connect (OSTI)

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.

Hwang, Wan Sik, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu [Department of Materials Engineering, Korea Aerospace University, Gyeonggi, 412791 (Korea, Republic of); Verma, Amit; Protasenko, Vladimir; Rouvimov, Sergei; Xing, Huili; Seabaugh, Alan; Jena, Debdeep, E-mail: whwang@kau.ac.kr, E-mail: djena@nd.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Peelaers, Hartwin; Van de Walle, Chris [Materials Department, University of California Santa Barbara, California 93106 (United States); Haensch, Wilfried [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Galazka, Zbigniew; Albrecht, Martin [Leibniz Institute for Crystal Growth, Max-Born Str., D-12489 Berlin (Germany); Fornari, Roberto [Leibniz Institute for Crystal Growth, Max-Born Str., D-12489 Berlin (Germany); Department of Physics and Earth Science, University of Parma, Parma, 43124 Italy (Italy)

2014-05-19T23:59:59.000Z

73

Remote switch actuator  

DOE Patents [OSTI]

The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

2013-01-29T23:59:59.000Z

74

Measurement of high voltage using Rutherford backscattering spectrometry  

E-Print Network [OSTI]

A novel variation of Rutherford Backscattering Spectrometry (RBS) has been utilized to measure a high voltage collected on an aluminum target by Direct Energy Conversion. The maximum high voltage on the target was measured to be 97.5 kV +/- 2 k...

Abrego, Celestino Pete

2007-04-25T23:59:59.000Z

75

Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion. Final report, April 1, 1993--February 28, 1994  

SciTech Connect (OSTI)

A low voltage/high current switch refer-red as ``Cs-Ba tacitron`` is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM{sup 2}, switch power density of 1 kW/cm{sup 2}, and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V.

Murray, C.S.; El-Genk, M.S.

1994-02-01T23:59:59.000Z

76

Living and Working Safely Around High-Voltage Power Lines.  

SciTech Connect (OSTI)

High-voltage transmission lines can be just as safe as the electrical wiring in the homes--or just as dangerous. The crucial factor is ourselves: they must learn to behave safely around them. This booklet is a basic safety guide for those who live and work around power lines. It deals primarily with nuisance shocks due to induced voltages, and with potential electric shock hazards from contact with high-voltage lines. References on possible long-term biological effects of transmission lines are shown. In preparing this booklet, the Bonneville Power Administration has drawn on more than 50 years of experience with high-voltage transmission. BPA operates one of the world`s largest networks of long-distance, high-voltage lines. This system has more than 400 substations and about 15,000 miles of transmission lines, almost 4,400 miles of which are operated at 500,000 volts.

United States. Bonneville Power Administration.

2001-06-01T23:59:59.000Z

77

High-index-contrast electromechanical optical switches  

E-Print Network [OSTI]

System developers are looking to replace protocol-dependent, bandwidth-limited optical networks with intelligent optically-transparent integrated photonic networks. Several electromechanical optical switches are explored ...

Bryant, Reginald (Reginald Eugene), 1978-

2011-01-01T23:59:59.000Z

78

Electrical system architecture having high voltage bus  

DOE Patents [OSTI]

An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

Hoff, Brian Douglas (East Peoria, IL); Akasam, Sivaprasad (Peoria, IL)

2011-03-22T23:59:59.000Z

79

High-voltage air-core pulse transformers  

SciTech Connect (OSTI)

General types of air core pulse transformers designed for high voltage pulse generation and energy transfer applications are discussed with special emphasis on pulse charging systems which operate up to the multi-megavolt range. The design, operation, dielectric materials, and performance are described. It is concluded that high voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The principal disadvantage of high voltage air core transformers is that they are not generally available from commercial sources. Consequently, the potential user must become thoroughly familiar with all aspects of design, fabrication and system application before he can produce a high performance transformer system. (LCL)

Rohwein, G. J.

1981-01-01T23:59:59.000Z

80

High Voltage Electrolyte for Lithium Batteries  

Broader source: Energy.gov (indexed) [DOE]

5.0E-04 1.0E-03 2 2.2 2.4 2.6 2.8 Voltage (V) dQdV (AhV) 1 st Charge 1.2M LiPF 6 ECEMC 37 1 st Charge 1.0M LiPF 6 TMS1NM3 55 with 2% and 4% VC 1 st Charge 1.0M LiPF 6 TMS...

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Low voltage amplifier architecture for high speed switched capacitor circuits  

E-Print Network [OSTI]

are studied in detail. It is shown how CMFF can improve the performance of pseudo-differential OTA's. An OTA based on the proposed architecture is designed in a 0.5 []m CMOS process available from MOSIS. Simulation results of the amplifier are presented. A...

Shankar, Asit

2001-01-01T23:59:59.000Z

82

Unravelling the Performance Degradation Mechanisms in High-voltage...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Unravelling the Performance Degradation Mechanisms in High-voltage Lithium-ion Battery Composite Oxide Electrodes Apr 11 2014 02:00 PM - 03:00 PM Debasish Mohanty, ORNL, Oak Ridge...

83

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

temperature gate drive is being developed for use with future wide band gap (silicon carbide and gallium nitride) switching devices. * Universal drive that is capable of driving...

84

Planar LTCC transformers for high voltage flyback converters: Part II.  

SciTech Connect (OSTI)

This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

Schofield, Daryl (NASCENTechnology, Inc., Watertown, SD); Schare, Joshua M., Ph.D.; Slama, George (NASCENTechnology, Inc., Watertown, SD); Abel, David (NASCENTechnology, Inc., Watertown, SD)

2009-02-01T23:59:59.000Z

85

Design & Fabrication of a High-Voltage Photovoltaic Cell  

SciTech Connect (OSTI)

Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

Felder, Jennifer; /North Carolina State U. /SLAC

2012-09-05T23:59:59.000Z

86

Design issues for high voltage converters for ion engines  

SciTech Connect (OSTI)

A design strategy is presented for a power converter for a high voltage ion engine for a spacecraft application. Various design issues such as appropriate topologies and control methods are considered. In this particular instance it was determined that a full bridge converter with phase shift gating and voltage mode control provided an efficient system with a minimum of electromagnetic interference. This system can be implemented in a straightforward manner, and it is relatively easy to protect from faults at the output.

King, R.J.; Stuart, T.A. [Univ. of Toledo, OH (United States)

1995-12-31T23:59:59.000Z

87

The design, construction, and operation of long-distance high-voltage electricity transmission technologies.  

SciTech Connect (OSTI)

This report focuses on transmission lines, which operate at voltages of 115 kV and higher. Currently, the highest voltage lines comprising the North American power grid are at 765 kV. The grid is the network of transmission lines that interconnect most large power plants on the North American continent. One transmission line at this high voltage was built near Chicago as part of the interconnection for three large nuclear power plants southwest of the city. Lines at this voltage also serve markets in New York and New England, also very high demand regions. The large power transfers along the West Coast are generally at 230 or 500 kV. Just as there are practical limits to centralization of power production, there are practical limits to increasing line voltage. As voltage increases, the height of the supporting towers, the size of the insulators, the distance between conductors on a tower, and even the width of the right-of-way (ROW) required increase. These design features safely isolate the electric power, which has an increasing tendency to arc to ground as the voltage (or electrical potential) increases. In addition, very high voltages (345 kV and above) are subject to corona losses. These losses are a result of ionization of the atmosphere, and can amount to several megawatts of wasted power. Furthermore, they are a local nuisance to radio transmission and can produce a noticeable hum. Centralized power production has advantages of economies of scale and special resource availability (for instance, hydro resources), but centralized power requires long-distance transfers of power both to reach customers and to provide interconnections for reliability. Long distances are most economically served at high voltages, which require large-scale equipment and impose a substantial footprint on the corridors through which power passes. The most visible components of the transmission system are the conductors that provide paths for the power and the towers that keep these conductors at a safe distance from each other and from the ground and the natural and built environment. Common elements that are generally less visible (or at least more easily overlooked) include the maintained ROW along the path of the towers, access roads needed for maintenance, and staging areas used for initial construction that may be restored after construction is complete. Also visible but less common elements along the corridor may include switching stations or substations, where lines of similar or different voltages meet to transfer power.

Molburg, J. C.; Kavicky, J. A.; Picel, K. C.

2008-03-03T23:59:59.000Z

88

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

driver circuit, 5-V on- chip voltage regulator, short-circuit protection, undervoltage lockout, bootstrap capacitor, dead time controller and temperature sensor * 0.8-micron,...

89

HIGH-VOLTAGE SPINEL AND POLYANION CATHODES  

Broader source: Energy.gov (indexed) [DOE]

ordering, segregation of cations to the surface, Mn 3+ content, morphology, and synthesisprocessing methodsconditions), and use the understanding to develop high-performance,...

90

A design for a high voltage magnet coil ringer test set  

SciTech Connect (OSTI)

By discharging a bank of charged capacitors through a high power SCR switch into an SSC dipole magnet assembly, it is possible to ``ring`` the coil and develop a voltage stress of greater than 50 volts turn-to-turn, thereby verifying the insulation integrity. We will present an overview of the test set design for a 2 kV isolated SCR firing circuit, including safety features, selectable capacitor banks, and digital waveform storage system. Results from testing typical coils and magnets will be included. Possible upgrades are also discussed.

Koska, W. [Fermi National Accelerator Lab., Batavia, IL (United States); Sims, R.E. [Superconducting Super Collider Lab., Dallas, TX (United States)

1992-04-01T23:59:59.000Z

91

A design for a high voltage magnet coil ringer test set  

SciTech Connect (OSTI)

By discharging a bank of charged capacitors through a high power SCR switch into an SSC dipole magnet assembly, it is possible to ring'' the coil and develop a voltage stress of greater than 50 volts turn-to-turn, thereby verifying the insulation integrity. We will present an overview of the test set design for a 2 kV isolated SCR firing circuit, including safety features, selectable capacitor banks, and digital waveform storage system. Results from testing typical coils and magnets will be included. Possible upgrades are also discussed.

Koska, W. (Fermi National Accelerator Lab., Batavia, IL (United States)); Sims, R.E. (Superconducting Super Collider Lab., Dallas, TX (United States))

1992-04-01T23:59:59.000Z

92

Gaseous insulators for high voltage electrical equipment  

DOE Patents [OSTI]

Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

Christophorou, Loucas G. (Oak Ridge, TN); James, David R. (Knoxville, TN); Pace, Marshall O. (Knoxville, TN); Pai, Robert Y. (Concord, TN)

1981-01-01T23:59:59.000Z

93

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications  

SciTech Connect (OSTI)

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently being channeled in the study related to improvements of these two parameters high bias operation and lifetime improvement for switches used in pulsed power applications. The contact material and profiles are another important area of study. Although these problems are being pursued through the incorporation of different contact materials and introducing doping near contacts, it is important that the switch properties and the conduction mechanism in these switches be well understood such that the basic nature of the problems can be properly addressed. In this paper the authors report on these two basic issues related to the device operation, i.e., mechanisms for increasing the hold-off characteristics through neutron irradiation, and the analysis of transport processes at varying field conditions in trap dominated SI GaAs in order to identify the breakdown mechanism during device operation. It is expected that this study would result in a better understanding of photoconductive switches, specifically those used in high power operation.

ISLAM,N.E.; SCHAMILOGLU,E.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; JOSHI,R.P.

2000-05-30T23:59:59.000Z

94

High voltage stability performance of a gamma ray detection device  

SciTech Connect (OSTI)

An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

Abdullah, Nor Arymaswati; Lombigit, Lojius; Rahman, Nur Aira Abd [Technical Support Division, Malaysian Nuclear Agency, 43000 Kajang, Selangor (Malaysia)

2014-02-12T23:59:59.000Z

95

Dynamic Voltage and Frequency Scaling Control for Crossbars in Input-Queued Switches  

E-Print Network [OSTI]

difficult to achieve. Reducing this thermal dissipation "bottleneck", or reducing the on-chip power the static power, due to leakage currents, since it tends to be proportional to the occupied area and can Abstract--The power consumption in chips, in general, and in crossbars switching fabrics, in particular

96

FERROELECTRIC SWITCH FOR A HIGH-POWER Ka-BAND ACTIVE PULSE COMPRESSOR  

SciTech Connect (OSTI)

Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW ?s-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

Hirshfield, Jay L. [Omega-P, Inc.] [Omega-P, Inc.

2013-12-18T23:59:59.000Z

97

Radio-Frequency Interference (RFI) From Extra-High-Voltage (EHV) Transmission Lines  

E-Print Network [OSTI]

-current (HVAC) transmission lines; high-voltage direct-current (HVDC) transmission lines will be addressed

Ellingson, Steven W.

98

Current isolating epitaxial buffer layers for high voltage photodiode array  

DOE Patents [OSTI]

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Morse, Jeffrey D. (Martinez, CA); Cooper, Gregory A. (Pleasant Hill, CA)

2002-01-01T23:59:59.000Z

99

Field Optimization of Three Dimensional High Voltage C. Trinitis  

E-Print Network [OSTI]

Field Optimization of Three Dimensional High Voltage Equipment C. Trinitis Lehrstuhl f The goal of finding an optimal electric field strength distribution for arbitrary three di­ mensional­ cal optimization algorithm. The package ob­ tained from these three components is then able

Stamatakis, Alexandros

100

High Voltage DC Transmission 1.0 Introduction  

E-Print Network [OSTI]

1 High Voltage DC Transmission 1.0 Introduction HVDC has been applied in electric power systems for many years now. Figure 1 illustrates worldwide many of the HVDC applications [1]. Fig. 1 ABB provides a webpage which summarizes HVDC projects by type and capacity or by commissioning year [2]. Wikipedia [3

McCalley, James D.

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Bilayer-Spanning DNA Nanopores with Voltage-Switching between Open and Closed State  

E-Print Network [OSTI]

smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages... for the development of new DNA nanopores for nanobiotechnology. Building rationally designed nanoscale porous structures that mediate transport across membranes is of general interest in fundamental and applied science.1, 2 Biomimetic engineered nanopores3...

Seifert, Astrid; Göpfrich, Kerstin; Burns, Jonathan R.; Fertig, Niels; Keyser, Ulrich F.; Howorka, Stefan

2014-10-22T23:59:59.000Z

102

High Power, High Voltage FETs in Linear Applications: A User's Perspective  

SciTech Connect (OSTI)

The specifications of the current crop of highpower, high-voltage field-effect transistors (FETs) can lure a designer into employing them in high-voltage DC equipment. Devices with extremely low on-resistance and very high power ratings are available from several manufacturers. However, our experience shows that high-voltage, linear operation of these devices at near-continuous duty can present difficult reliability challenges at stress levels well-below their published specifications. This paper chronicles the design evolution of a 600 volt, 8 ampere shunt regulator for use with megawatt-class radio transmitters, and presents a final design that has met its reliability criteria.

N. Greenough, E. Fredd, S. DePasquale

2009-09-21T23:59:59.000Z

103

Distribution System Voltage Performance Analysis for High-Penetration Photovoltaics  

SciTech Connect (OSTI)

This report examines the performance of commonly used distribution voltage regulation methods under reverse power flow.

Liu, E.; Bebic, J.

2008-02-01T23:59:59.000Z

104

Experimental validation of a high voltage pulse measurement method.  

SciTech Connect (OSTI)

This report describes X-cut lithium niobate's (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps - 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensor's U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

2013-09-01T23:59:59.000Z

105

A scalable silicon photonic chip-scale optical switch for high performance computing systems  

E-Print Network [OSTI]

A scalable silicon photonic chip-scale optical switch for high performance computing systems-scale optical switch for scalable interconnect network in high performance computing systems. The proposed

Yoo, S. J. Ben

106

Active high-power RF switch and pulse compression system  

DOE Patents [OSTI]

A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

Tantawi, Sami G. (San Mateo, CA); Ruth, Ronald D. (Woodside, CA); Zolotorev, Max (Mountain View, CA)

1998-01-01T23:59:59.000Z

107

Milligram-Scale High-Voltage Power Electronics for Piezoelectric Microrobots  

E-Print Network [OSTI]

, the generation of high voltages for HMF actu- ators requires voltage conversion circuits with step-up ratios to the voltage step-up functionality, the power electronics circuitry must generate a time-varying signal ranging from 50 to 100. While there are a number of circuit topologies with high step-up ratios, many

Wood, Robert

108

An Approximate Dynamic Programming Algorithm for the Allocation of High-Voltage Transformer Spares in the  

E-Print Network [OSTI]

An Approximate Dynamic Programming Algorithm for the Allocation of High-Voltage Transformer Spares high-voltage transformer spares throughout the electric grid to mitigate the risk of random transformer-voltage transformers are an integral part of the electric transmission system. A catas- trophic transformer failure

Powell, Warren B.

109

Effect of current compliance and voltage sweep rate on the resistive switching of HfO{sub 2}/ITO/Invar structure as measured by conductive atomic force microscopy  

SciTech Connect (OSTI)

The electrical characterization of HfO{sub 2}/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO{sub 2} surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO{sub 2}/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

Wu, You-Lin, E-mail: ylwu@ncnu.edu.tw; Liao, Chun-Wei [Department of Electrical Engineering, National Chi Nan University, Puli, Nantou, Taiwan (China); Ling, Jing-Jenn [Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, Nantou, Taiwan (China)

2014-06-16T23:59:59.000Z

110

High-voltage atmospheric breakdown across intervening rutile dielectrics.  

SciTech Connect (OSTI)

This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

2013-09-01T23:59:59.000Z

111

High Temperature, High Voltage Fully Integrated Gate Driver Circuit |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCE andHighWells |

112

High Temperature, High Voltage Fully Integrated Gate Driver Circuit |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCE andHighWells |Department

113

Plasma Switch for High-Power Active Pulse Compressor  

SciTech Connect (OSTI)

Results are presented from experiments carried out at the Naval Research Laboratory X-band magnicon facility on a two-channel X-band active RF pulse compressor that employed plasma switches. Experimental evidence is shown to validate the basic goals of the project, which include: simultaneous firing of plasma switches in both channels of the RF circuit, operation of quasi-optical 3-dB hybrid directional coupler coherent superposition of RF compressed pulses from both channels, and operation of the X-band magnicon directly in the RF pulse compressor. For incident 1.2 ?s pulses in the range 0.63 ? 1.35 MW, compressed pulses of peak powers 5.7 ? 11.3 MW were obtained, corresponding to peak power gain ratios of 8.3 ? 9.3. Insufficient bakeout and conditioning of the high-power RF circuit prevented experiments from being conducted at higher RF input power levels.

Hirshfield, Jay L. [Omega-P, Inc.] [Omega-P, Inc.

2013-11-04T23:59:59.000Z

114

Voltage spike detection in high field superconducting accelerator magnets  

SciTech Connect (OSTI)

A measurement system for the detection of small magnetic flux changes in superconducting magnets, which are due to either mechanical motion of the conductor or flux jump, has been developed at Fermilab. These flux changes are detected as small amplitude, short duration voltage spikes, which are {approx}15mV in magnitude and lasts for {approx}30 {micro}sec. The detection system combines an analog circuit for the signal conditioning of two coil segments and a fast data acquisition system for digitizing the results, performing threshold detection, and storing the resultant data. The design of the spike detection system along with the modeling results and noise analysis will be presented. Data from tests of high field Nb{sub 3}Sn magnets at currents up to {approx}20KA will also be shown.

Orris, D.F.; Carcagno, R.; Feher, S.; Makulski, A.; Pischalnikov, Y.M.; /Fermilab

2004-12-01T23:59:59.000Z

115

Effect of high-voltage nanosecond pulses on complex plasmas  

SciTech Connect (OSTI)

Influence of high-voltage (1-11 kV) pulses of nanosecond (20 ns) duration on microparticles levitating in a rf plasma is studied. It is shown that the pulses produce significant influence on the plasma, causing perturbations with the relaxation time of the order of 10{sup -4} s. This time is sufficient for the microparticle to acquire significant kinetic energy. Application of repetitive pulses leads to the vertical oscillations of the microparticles. Clusters, consisting of small number of microparticles, exhibit parametric instabilities of horizontal modes under the effect of repetitive pulses. It was shown that the parametric instability is caused by the vertical oscillations of the microparticles in the nonuniform environment of the sheath.

Pustylnik, M. Y.; Ivlev, A. V.; Thomas, H. M.; Morfill, G. E. [Max-Planck-Institut fuer Extraterrestrische Physik, Giessenbachstrasse, 85741 Garching (Germany); Vasilyak, L. M.; Vetchinin, S. P.; Polyakov, D. N.; Fortov, V. E. [Joint Institute for High Temperatures, Russian Academy of Sciences, Izhorskaya 13/19, 125412 Moscow (Russian Federation)

2009-11-15T23:59:59.000Z

116

Summary of multiterminal high-voltage direct current transmission technology  

SciTech Connect (OSTI)

This report summarizes the present state of multiterminal (MT) high-voltage direct current (HVDC) power transmission. The purpose is to reassess the need for HVDC circuit breakers and to identify needed research for MT HVDC. The fundamentals of this technology are presented, and previous research and development is reviewed. Although no MT HVDC systems have yet been built, many concepts have been proposed. Some require a dc breaker, and others do not. Both options have advantages and disadvantages for various applications, so the selection will depend on the proposed application. Research is needed to define operating characteristics of various MT HVDC systems. In some applications, dc breakers will be useful, so research into HVDC interruption should continue. Also, dc fault detection and control algorithms for MT systems should be studied.

Biggs, R.B.; Jewell, W.T.

1984-05-01T23:59:59.000Z

117

Voltage controlled current source  

DOE Patents [OSTI]

A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

Casne, Gregory M. (Pittsburgh, PA)

1992-01-01T23:59:59.000Z

118

High-Efficiency Multiple-Output DC-DC Conversion for Low-Voltage Systems  

E-Print Network [OSTI]

This versatile power converter controller provides dual outputs at a fixed switching frequency and can regulate either output voltage or target system delay (using an external -- filter). In the voltage regulation mode, the output voltage is monitored with an analog--digital (A/D) converter, and the feedback compensation network is implemented digitally. The generation of the pulsewidth modulation (PWM) signal is done with a hybrid delay line/counter approach, which saves power and area relative to previous implementations. Power devices are included on chip to create the two independently regulated output PWM signals. The key features of this design are its low-power dissipation, reconfigurability, use of either delay or voltage feedback, and multiple outputs.

Abram P. Dancy; Rajeevan Amirtharajah; Anantha P. Chandrakasan

2000-01-01T23:59:59.000Z

119

High voltage power supply with modular series resonant inverters  

DOE Patents [OSTI]

A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360.degree./n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit.

Dreifuerst, Gary R. (Livermore, CA); Merritt, Bernard T. (Livermore, CA)

1995-01-01T23:59:59.000Z

120

High voltage power supply with modular series resonant inverters  

DOE Patents [OSTI]

A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360{degree}/n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit. 11 figs.

Dreifuerst, G.R.; Merritt, B.T.

1995-07-18T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Highly uniform bipolar resistive switching characteristics in TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} multilayer  

SciTech Connect (OSTI)

Nanoscale multilayer structure TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} has been fabricated on Pt/Ti/SiO{sub 2}/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2}/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO{sub 2} play a crucial role in the resistive switching phenomenon and the introduced TiO{sub 2}/BaTiO{sub 3} interfaces result in the high uniformity of bipolar resistive switching characteristics.

Ma, W. J.; Zhang, X. Y.; Wang, Ying; Zheng, Yue, E-mail: zhengy35@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China) [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China); Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China); Lin, S. P. [Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China) [Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China); Sino-French Institute of Nuclear Engineering and Technology, Zhuhai Campus, Sun Yat-Sen University, Zhuhai 519082 (China); Luo, J. M.; Wang, B., E-mail: zhengy35@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China); Li, Z. X. [Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China)] [Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China)

2013-12-23T23:59:59.000Z

122

Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap  

SciTech Connect (OSTI)

A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. These results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.

Maxson, Jared; Bazarov, Ivan; Dunham, Bruce; Dobbins, John; Liu, Xianghong; Smolenski, Karl [Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, New York 14853 (United States)

2014-09-15T23:59:59.000Z

123

Design and Evaluation of Scalable Switching Fabrics for High-Performance Routers  

E-Print Network [OSTI]

high scalability and low costs. The considered switching fabrics are based on a multistage structure. The buffered switching fabrics under our consideration are scalable and of low costs, ideally suitable's for packets to move from their arrival LC's toward their destined LC's. Switching fabrics naturally affect

Tzeng, Nian-Feng

124

Theory and practice of dynamic voltage/frequency scaling in the high performance computing environment.  

E-Print Network [OSTI]

?? This dissertation provides a comprehensive overview of the theory and practice of Dynamic Voltage/Frequency Scaling (DVFS) in the High Performance Computing (HPC) environment. We… (more)

Rountree, Barry Louis

2010-01-01T23:59:59.000Z

125

Princeton Power Systems (TRL 5 6 Component) - Marine High-Voltage...  

Broader source: Energy.gov (indexed) [DOE]

Princeton Power Systems (TRL 5 6 Component) - Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage Princeton Power Systems (TRL 5 6...

126

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors  

SciTech Connect (OSTI)

Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

2010-01-01T23:59:59.000Z

127

RF-MEMS capacitive switches with high reliability  

DOE Patents [OSTI]

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

2013-09-03T23:59:59.000Z

128

High frequency AC power converter for low voltage circuits  

E-Print Network [OSTI]

This thesis presents a novel AC power delivery architecture that is suitable for VHF frequency (50-100MHz) polyphase AC/DC power conversion in low voltage integrated circuits. A complete AC power delivery architecture was ...

Salazar, Nathaniel Jay Tobias

2012-01-01T23:59:59.000Z

129

Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias  

SciTech Connect (OSTI)

Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B. [Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Macheret, Sergey O. [Lockheed Martin Aeronautics Company, Palmdale, California 93599 (United States)

2008-08-15T23:59:59.000Z

130

Solid-state Marx based two-switch voltage modulator for the On-Line Isotope Mass Separator accelerator at the European Organization for Nuclear Research  

SciTech Connect (OSTI)

A new circuit topology is proposed to replace the actual pulse transformer and thyratron based resonant modulator that supplies the 60 kV target potential for the ion acceleration of the On-Line Isotope Mass Separator accelerator, the stability of which is critical for the mass resolution downstream separator, at the European Organization for Nuclear Research. The improved modulator uses two solid-state switches working together, each one based on the Marx generator concept, operating as series and parallel switches, reducing the stress on the series stacked semiconductors, and also as auxiliary pulse generator in order to fulfill the target requirements. Preliminary results of a 10 kV prototype, using 1200 V insulated gate bipolar transistors and capacitors in the solid-state Marx circuits, ten stages each, with an electrical equivalent circuit of the target, are presented, demonstrating both the improved voltage stability and pulse flexibility potential wanted for this new modulator.

Redondo, L. M.; Canacsinh, H.; Ferrao, N.; Mendes, C. [Instituto Superior de Engenharia de Lisboa (ISEL), R. Conselheiro Emidio Navarro 1, Lisbon 1959-007 (Portugal); Nuclear Physics Center-Lisbon University (CFNUL), Av. Prof. Gama Pinto 2, Lisbon 1649-003 (Portugal); Silva, J. Fernando [Instituto Superior Tecnico (IST), Universidade Tecnica de Lisboa, Av. Rovisco Pais 1, Lisbon 1049-001 (Portugal); Center for Innovation in Electrical and Energy Engineering-TU Lisbon, Av. Rovisco Pais 1, Lisbon 1049-001 (Portugal); Soares, R. [Nuclear Physics Center--Lisbon University (CFNUL), Av. Prof. Gama Pinto 2, Lisbon 1649-003 (Portugal); ABT Group, TE Department, Site de Prevessin, FR-01631 CERN (Switzerland); Schipper, J.; Fowler, A. [ABT Group, TE Department, Site de Prevessin, FR-01631 CERN (Switzerland)

2010-07-15T23:59:59.000Z

131

Wide Bandgap Extrinsic Photoconductive Switches  

SciTech Connect (OSTI)

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Sullivan, J S

2012-01-17T23:59:59.000Z

132

Radio-frequency powered glow discharge device and method with high voltage interface  

DOE Patents [OSTI]

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components.

Duckworth, Douglas C. (Knoxville, TN); Marcus, R. Kenneth (Clemson, SC); Donohue, David L. (Vienna, AT); Lewis, Trousdale A. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

133

Radio-frequency powered glow discharge device and method with high voltage interface  

DOE Patents [OSTI]

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components. 11 figures.

Duckworth, D.C.; Marcus, R.K.; Donohue, D.L.; Lewis, T.A.

1994-06-28T23:59:59.000Z

134

Chapter 19. High Voltage Insulation, Diagnostics and Energetic Electron and Photon Beam Interactions  

E-Print Network [OSTI]

Chapter 19. High Voltage Insulation, Diagnostics and Energetic Electron and Photon Beam Interactions 19-1 High Voltage Insulation, Diagnostics and Energetic Electron and Photon Beam Interactions 1. DC Properties of Modern Filled Epoxy Insulation Academic and Research Staff Dr. Chathan Cooke Sponsor

135

Evaluation of Insulation Systems for the Optimal Design of High Voltage Pulse Transformers  

E-Print Network [OSTI]

This paper presents a study for the design of the insulation systems of high voltage pulse transformer based on experimental tests and numerical simulations. Data of high voltage tests on solid and liquid insulation materials are presented and discussed. The understanding of each part of the insulation is supported by electrostatic fields simulations.

Sylvain, Candolfi; Davide, Aguglia; Philippe, Viarouge; Jürgen, Biela; Jerome, Cros

2015-01-01T23:59:59.000Z

136

High gain photoconductive semiconductor switch having tailored doping profile zones  

DOE Patents [OSTI]

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O'Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

137

High voltage bus and auxiliary heater control system for an electric or hybrid vehicle  

DOE Patents [OSTI]

A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

Murty, Balarama Vempaty (West Bloomfield, MI)

2000-01-01T23:59:59.000Z

138

Voltage Sequence Control Based High-Current Rectifier System  

E-Print Network [OSTI]

of transformer. A passive filter is added at the primary side to achieve power factor improvement over the range of output voltage. This scheme is optimized to determine optimum turns ratio of the transformer and optimum not enforce unity power factor operation and guidelines provided by harmonic standards such as IEEE-519

Paderborn, Universität

139

Switching power pulse system  

DOE Patents [OSTI]

A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

Aaland, K.

1983-08-09T23:59:59.000Z

140

An AWGR based Low-Latency Optical Switch for Data Centers and High Performance Computing Systems  

E-Print Network [OSTI]

i An AWGR based Low-Latency Optical Switch for Data Centers and High Performance Computing Systems based optical switch for data centers and high performance computing systems that builds upon several for Data Centers and High Performance Computing Systems ..i ABSTRACT .....................................

Kolner, Brian H.

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Investigation of In 0.53Ga,,47As/AIAs resonant tunnelifig diodes for high speed switching  

E-Print Network [OSTI]

(space charge transport). Unfortunately, large swing voltages in- crease the RTD heat load, forcing calculation, which includes the effects of strain and band bending. Swing voltages over the range OS-l.0 V of 6:l. The minimum rise time in this sample is calculated to be limited by RC switching delays to 1

Ozbay, Ekmel

142

Impact of High Wind Penetration on the Voltage Profile of Distribution Systems  

E-Print Network [OSTI]

of wind generator the voltage of the system may become lower than acceptable voltage level due and wind generator is presented. Simulation results are given in Section III which shows the impact of high--In this paper, simulation results showing the effect of lower and higher penetration of distributed wind

Pota, Himanshu Roy

143

A High-Frequency Resonant Inverter Topology With Low-Voltage Stress  

E-Print Network [OSTI]

This paper presents a new switched-mode resonant inverter, which we term the inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low ...

Rivas, Juan M.

144

Triple voltage dc-to-dc converter and method  

DOE Patents [OSTI]

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Su, Gui-Jia (Knoxville, TN)

2008-08-05T23:59:59.000Z

145

Cygnus PFL Switch Jitter  

SciTech Connect (OSTI)

The Cygnus Dual Beam Radiographic Facility consists of two identical radiographic sources: Cygnus 1 and Cygnus 2. Each source has the following X-ray output: 1-mm diameter spot size, 4 rads at 1 m, 50-ns full-widthhalf-maximum. The diode pulse has the following electrical specifications: 2.25 MV, 60 kA, 60 ns. This Radiographic Facility is located in an underground tunnel test area at the Nevada Test Site (NTS). The sources were developed to produce high-resolution images on subcritical tests performed at NTS. Subcritical tests are single-shot, high-value events. For this application, it is desirable to maintain a high level of reproducibility in source output. The major components of the Cygnus machines are Marx generator, water-filled pulse forming line (PFL), water-filled coaxial transmission line, threecell inductive voltage adder, and rod-pinch diode. A primary source of fluctuation in Cygnus shot-to-shot performance may be jitter in breakdown of the main PFL switch, which is a “self-break” switch. The PFL switch breakdown time determines the peak PFL charging voltage, which ultimately affects the source X-ray spectrum and dose. Therefore, PFL switch jitter may contribute to shot-to-shot variation in these parameters, which are crucial to radiographic quality. In this paper we will present PFL switch jitter analysis for both Cygnus machines and present the correlation with dose. For this analysis, the PFL switch on each machine was maintained at a single gap setting, which has been used for the majority of shots at NTS. In addition the PFL switch performance for one larger switch gap setting will be examined.

C. Mitton, G. Corrow, M. Hansen, D. Henderson, et al.

2007-07-21T23:59:59.000Z

146

Cygnus Water Switch Jitter  

SciTech Connect (OSTI)

The Cygnus Dual Beam Radiographic Facility consists of two identical radiographic sources - Cygnus 1 and Cygnus 2. Each source has the following x-ray output: 1-mm diameter spot size, 4 rad at 1 m, 50-ns Full Width Half Max. The diode pulse has the following electrical specifications: 2.25 MV, 60 kA, 60 ns. This Radiographic Facility is located in an underground tunnel test area at the Nevada Test Site (NTS). The sources were developed to produce high-resolution images on subcritical tests which are performed at NTS. Subcritical tests are single-shot, high-value events. For this application, it is desirable to maintain a high level of reproducibility in source output. The major components of the Cygnus machines are: Marx generator, water-filled pulse–forming line (PFL), water-filled coaxial transmission line, three-cell inductive voltage adder, and rod-pinch diode. A primary source of fluctuation in Cygnus shot-to-shot performance is jitter in breakdown of the main PFL switch, which is a “self-break” switch. The PFL switch breakdown time determines the peak PFL charging voltage, which ultimately affects the diode pulse. Therefore, PFL switch jitter contributes to shot-to-shot variation in source endpoint energy and dose. In this paper we will present PFL switch jitter analysis for both Cygnus machines and give the correlation with diode performance. For this analysis the PFL switch on each machine was maintained at a single gap setting which has been used for the majority of shots at NTS. In addition to this analysis, PFL switch performance for different switch gap settings taken recently will be examined. Lastly, implications of source jitter for radiographic diagnosis of subcritical shots will be discussed.

Charles V. Mitton, George D. Corrow, Mark D. Hansen, David J. Henderson, et al.

2008-03-01T23:59:59.000Z

147

High voltage ignition of high pressure microwave powered UV light sources  

SciTech Connect (OSTI)

Industrial microwave powered (electrodeless) light sources have been limited to quiescent pressures of {approximately}300 Torr of buffer gas and metal-halide fills. The predominant reason for such restrictions has been the inability to microwave ignite the plasma due to the collisionality of higher pressure fills and/or the electronegativity of halide bulb chemistries. Commercially interesting bulb fills require electric fields for ionization that are often large multiples of the breakdown voltage for air. Many auxiliary ignition methods are evaluated for efficiency and practicality before the choice of a high-voltage system with a retractable external electrode. The scheme utilizes a high voltage pulse power supply and a novel field emission source. Acting together they create localized condition of pressure reduction and high free electron density. This allows the normal microwave fields to drive this small region into avalanche, ignite the bulb, and heat the plasma to its operating point (T{sub e} {approx} 0.5 eV). This process is currently being used in a new generation of lamps, which are using multi-atmospheric excimer laser chemistries and pressure and constituent enhanced metal-halide systems. At the present time, production prototypes produce over 900 W of radiation in a 30 nm band, centered at 308 nm. Similarly, these prototypes when loaded with metal-halide bulb fills produce over 1 kW of radiation in 30 nm wide bands, centered about the wavelength of interest.

Frank, J.D.; Cekic, M.; Wood, C.H. [Fusion U.V. Curing Systems Corp., Gaithersburg, MD (United States)

1997-12-31T23:59:59.000Z

148

An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.  

SciTech Connect (OSTI)

References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

Litzenberger, Wayne; Lava, Val

1994-08-01T23:59:59.000Z

149

Princeton Power Systems (TRL 5 6 Component)- Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage  

Broader source: Energy.gov [DOE]

Princeton Power Systems (TRL 5 6 Component) - Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage

150

Transient voltage oscillations in coils  

SciTech Connect (OSTI)

Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated.

Chowdhuri, P.

1985-01-01T23:59:59.000Z

151

Vehicle Technologies Office Merit Review 2014: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles  

Broader source: Energy.gov [DOE]

Presentation given by Seeo, Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high-voltage solid polymer...

152

Current mode integrators and their applications in low-voltage high frequency CMOS signal processing  

E-Print Network [OSTI]

Low voltage CMOS fully differential integrators for high frequency continuous-time filters using current-mode techniques are presented.. Current mode techniques are employed to avoid the use of the floating differential pair, in order to achieve...

Smith, Sterling Lane

1993-01-01T23:59:59.000Z

153

Voltage-dependent calcium channels and currents in native neurons and other cells have been divided into high voltage  

E-Print Network [OSTI]

Voltage-dependent calcium channels and currents in native neurons and other cells have been divided than one subtype of channel. A new subfamily of voltage-dependent calcium channel á1 subunit genes. 1999), having four domains, each with a voltage sensor and a pore-forming P loop. However

Dolphin, Annette C.

154

Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source  

SciTech Connect (OSTI)

Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of ?1.5 kV with falltime 3 ns and risetime 15 ns into a 50? load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

Sulaeman, M. Y.; Widita, R. [Department of Physics, Nuclear Physics and Biophysics Research Division, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Bandung (Indonesia)

2014-09-30T23:59:59.000Z

155

High peak power test of S-band waveguide switches  

SciTech Connect (OSTI)

The injector and source of particles for the Advanced Photon Source (APS) is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five existing S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized waveguide switches at a peak operating power of 35 MW. A test stand was set up at the Stanford Linear Accelerator Center (SLAC) Klystron-Microwave laboratory to conduct tests characterizing the power handling capability of these waveguide switches. Test results are presented.

Nassiri, A.; Grelick, A.; Kustom, R.L.; White, M.

1997-08-01T23:59:59.000Z

156

CREE: Making the Switch  

SciTech Connect (OSTI)

CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

Grider, David; Palmer, John

2014-03-06T23:59:59.000Z

157

CREE: Making the Switch  

ScienceCinema (OSTI)

CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

Grider, David; Palmer, John

2014-04-09T23:59:59.000Z

158

Low Voltage High Precision Spatial Light ModulatorsFinal Report  

SciTech Connect (OSTI)

The goal of this project was to make LLNL a leader in Spatial Light Modulators (SLMs) by developing the technology that will be needed by the next generation of SLMs. We would use new lower voltage actuators and bond those actuators directly to controlling circuitry to break the fundamental limitations that constrain current SLM technology. This three-year project was underfunded in the first year and not funded in the second year. With the funding that was available, we produced actuators and designs for the controlling circuitry that would have been integrated in the second year. Spatial light modulators (SLMs) are arrays of tiny movable mirrors that modulate the wave-fronts of light. SLMs can correct aberrations in incoming light for adaptive optics or modulate light for beam control, optical communication and particle manipulation. MicroElectroMechanical Systems (MEMS) is a technology that utilizes the microfabrication tools developed by the semiconductor industry to fabricate a wide variety of tiny machines. The first generation of MEMS SLMs have improved the functionality of SLMs while drastically reducing per pixel cost making arrays on the order of 1000 pixels readily available. These MEMS SLMs however are limited by the nature of their designs to be very difficult to scale above 1000 pixels and have very limited positioning accuracy. By co-locating the MEMS mirrors with CMOS electronics, we will increase the scalability and positioning accuracy. To do this we will have to make substantial advances in SLM actuator design, and fabrication.

Papavasiliou, A P

2005-02-09T23:59:59.000Z

159

Utilizing zero-sequence switchings for reversible converters  

DOE Patents [OSTI]

A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

2004-12-14T23:59:59.000Z

160

Testing of High Voltage Surge Protection Devices for Use in Liquid Argon TPC Detectors  

E-Print Network [OSTI]

In this paper we demonstrate the capability of high voltage varistors and gas discharge tube arrestors for use as surge protection devices in liquid argon time projection chamber detectors. The insulating and clamping behavior of each type of device is characterized in air (room temperature), and liquid argon (90~K), and their robustness under high voltage and high energy surges in cryogenic conditions is verified. The protection of vulnerable components in liquid argon during a 150 kV high voltage discharge is also demonstrated. Each device is tested for argon contamination and light emission effects, and both are constrained to levels where no significant impact upon liquid argon time projection chamber functionality is expected. Both devices investigated are shown to be suitable for HV surge protection applications in cryogenic detectors.

J. Asaadi; J. M. Conrad; S. Gollapinni; B. J. P. Jones; H. Jostlein; J. M. St. John; T. Strauss; S. Wolbers; J. Zennamo

2014-06-23T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Connecting Renewables Directly to the Grid: Resilient Multi-Terminal HVDC Networks with High-Voltage High-Frequency Electronics  

SciTech Connect (OSTI)

GENI Project: GE is developing electricity transmission hardware that could connect distributed renewable energy sources, like wind farms, directly to the grid—eliminating the need to feed the energy generated through intermediate power conversion stations before they enter the grid. GE is using the advanced semiconductor material silicon carbide (SiC) to conduct electricity through its transmission hardware because SiC can operate at higher voltage levels than semiconductors made out of other materials. This high-voltage capability is important because electricity must be converted to high-voltage levels before it can be sent along the grid’s network of transmission lines. Power companies do this because less electricity is lost along the lines when the voltage is high.

None

2012-01-23T23:59:59.000Z

162

Effect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility Transistors  

E-Print Network [OSTI]

conditions, UV illumination decreases the critical voltage for the onset of degradation in gate current in Ga traps in the fresh state. Keywords­ GaN HEMTs, critical voltage, degradation, UV illuminationEffect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility

del Alamo, Jesús A.

163

Automatic voltage imbalance detector  

DOE Patents [OSTI]

A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

Bobbett, Ronald E. (Los Alamos, NM); McCormick, J. Byron (Los Alamos, NM); Kerwin, William J. (Tucson, AZ)

1984-01-01T23:59:59.000Z

164

Switching power supply  

DOE Patents [OSTI]

The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

Mihalka, A.M.

1984-06-05T23:59:59.000Z

165

High Voltage Electrolyte for Lithium Batteries | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCEDOE Biomass Program Review2

166

High Voltage Electrolyte for Lithium Batteries | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCEDOE Biomass Program

167

Low voltage arc formation in railguns  

DOE Patents [OSTI]

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

Hawke, R.S.

1985-08-05T23:59:59.000Z

168

Low voltage arc formation in railguns  

DOE Patents [OSTI]

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile. 2 figs.

Hawke, R.S.

1987-11-17T23:59:59.000Z

169

Low voltage arc formation in railguns  

DOE Patents [OSTI]

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

Hawke, Ronald S. (Livermore, CA)

1987-01-01T23:59:59.000Z

170

Method of making high breakdown voltage semiconductor device  

DOE Patents [OSTI]

A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

Arthur, Stephen D. (Scotia, NY); Temple, Victor A. K. (Jonesville, NY)

1990-01-01T23:59:59.000Z

171

High-Voltage Solid Polymer Batteries for Electric Drive Vehicles  

SciTech Connect (OSTI)

The purpose of this project was for Seeo to develop a high energy lithium based technology with targets of over 500 Wh/l and 325 Wh/kg. Seeo would leverage the work already achieved with its unique proprietary solid polymer DryLyteTM technology in cells which had a specific energy density of 220 Wh/kg. The development work was focused on establishing a dual electrolyte system, coated cathode particle techniques, various types of additives, and different conductive salts. The program had a duration of three years, with Seeo delivering the final cells at the end of 2014 for evaluation by a DOE laboratory.

Eitouni, Hany; Yang, Jin; Pratt, Russell; Wang, Xiao; Grape, Ulrik

2014-09-29T23:59:59.000Z

172

Dual design resistor for high voltage conditioning and transmission lines  

DOE Patents [OSTI]

A dual resistor for eliminating the requirement for two different value resistors. The dual resistor includes a conditioning resistor at a high resistance value and a run resistor at a low resistance value. The run resistor can travel inside the conditioning resistor. The run resistor is capable of being advanced by a drive assembly until an electrical path is completed through the run resistor thereby shorting out the conditioning resistor and allowing the lower resistance run resistor to take over as the current carrier.

Siggins, Timothy Lynn (Newport News, VA); Murray, Charles W. (Hayes, VA); Walker, Richard L. (Norfolk, VA)

2007-01-23T23:59:59.000Z

173

Switching power pulse system  

DOE Patents [OSTI]

A switching system for delivering pulses of power from a source (10) to a load (20) using a storage capacitor (C3) charged through a rectifier (D1, D2), and maintained charged to a reference voltage level by a transistor switch (Q1) and voltage comparator (12). A thyristor (22) is triggered to discharge the storage capacitor through a saturable reactor (18) and fractional turn saturable transformer (16) having a secondary to primary turn ratio N of n:l/n=n.sup.2. The saturable reactor (18) functions as a "soaker" while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor (C4) charges, and then switches to a low impedance state to dump the charge of the storage capacitor (C3) into the load through the coupling capacitor (C4). The transformer is comprised of a multilayer core (26) having two secondary windings (28, 30) tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes (32, 34) for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe (40) for a linear particle accelerator and capacitance of a pulse forming network (42). To hold off discharge of the capacitance until it is fully charged, a saturable core (44) is provided around the resistive beampipe (40) to isolate the beampipe from the capacitance (42) until it is fully charged.

Aaland, Kristian (Livermore, CA)

1983-01-01T23:59:59.000Z

174

Optimizing performance per watt on GPUs in High Performance Computing: temperature, frequency and voltage effects  

E-Print Network [OSTI]

The magnitude of the real-time digital signal processing challenge attached to large radio astronomical antenna arrays motivates use of high performance computing (HPC) systems. The need for high power efficiency (performance per watt) at remote observatory sites parallels that in HPC broadly, where efficiency is an emerging critical metric. We investigate how the performance per watt of graphics processing units (GPUs) is affected by temperature, core clock frequency and voltage. Our results highlight how the underlying physical processes that govern transistor operation affect power efficiency. In particular, we show experimentally that GPU power consumption grows non-linearly with both temperature and supply voltage, as predicted by physical transistor models. We show lowering GPU supply voltage and increasing clock frequency while maintaining a low die temperature increases the power efficiency of an NVIDIA K20 GPU by up to 37-48% over default settings when running xGPU, a compute-bound code used in radio...

Price, D C; Barsdell, B R; Babich, R; Greenhill, L J

2014-01-01T23:59:59.000Z

175

Design and validation of a high-voltage levitation circuit for electrostatic accelerometers  

SciTech Connect (OSTI)

A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 ?m, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup ?8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order of magnitude lower.

Li, G.; Wu, S. C.; Zhou, Z. B.; Bai, Y. Z.; Hu, M.; Luo, J. [MOE Key Laboratory of Fundamental Physical Quantities Measurements, School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)] [MOE Key Laboratory of Fundamental Physical Quantities Measurements, School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

2013-12-15T23:59:59.000Z

176

Static reactive power compensators for high-voltage power systems. Final report  

SciTech Connect (OSTI)

A study conducted to summarize the role of static reactive power compensators for high voltage power system applications is described. This information should be useful to the utility system planning engineer in applying static var systems (SVS) to high voltage as (HVAC) systems. The static var system is defined as a form of reactive power compensator. The general need for reactive power compensation in HVAC systems is discussed, and the static var system is compared to other devices utilized to provide reactive power compensation. Examples are presented of applying SVS for specific functions, such as the prevention of voltage collapse. The operating principles of commercially available SVS's are discussed in detail. The perormance and active power loss characteristics of SVS types are compared.

Not Available

1981-04-01T23:59:59.000Z

177

The powerful high-voltage glow discharge electron gun and power unit on its base  

SciTech Connect (OSTI)

The technical and operational characteristics and features of powerful electron gun with cold cathodes on the basis of high-voltage glow discharge (HGD) are submitted. The systems, ensuring their work are described. Some results of operation and applications of these non-traditional electron guns are presented.

Chernov, V.A. [All-Russian Electrotechnical Institute, Moscow (Russian Federation)

1994-12-31T23:59:59.000Z

178

An earth-isolated optically coupled wideband high voltage probe powered by ambient light  

E-Print Network [OSTI]

(2012) Optimized working conditions for a thermoelectric generator as a topping cycle for gas turbines J (2012) Feasibility study in application of forging waste heat on absorption cooling system J. Renewable-emitting diode that converts high voltage into an amplitude-modulated optical signal, which is then conveyed

Bellan, Paul M.

179

Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub  

E-Print Network [OSTI]

Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub Sukhendu-dimensional device simulation to examine the effect of a collector tub on the collector breakdown of the SOI based BJTs. This method involves creating a collector tub by etching the buried oxide followed by an n

Kumar, M. Jagadesh

180

Interconnected High-Voltage Pulsed-Power Converters System Design for H? Ion Sources  

E-Print Network [OSTI]

This paper presents the design and experimental validations of a system of three new high-voltage (HV) pulsedpower converters for the H? sources. The system requires three pulsed voltages (50, 40, and 25 kV to ground) at 2-Hz repetition rate, for 700 ?s of usable flat-top. The solution presents ripplefree output voltages and minimal stored energy to protect the ion source from the consequences of arc events. Experimental results on the final full-scale prototype are presented. In case of short-circuit events, the maximal energy delivered to the source is in the Joule range. HV flat-top stability of 1% is experimentally achieved with a simple Proportional-Integral- Derivative regulation and preliminary tuned H? source (e.g., radio frequency control, gas injection, and so forth). The system is running since more than a year with no power converter failures and damage to the source.

Aguglia, D

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Partial discharge measurements on a high voltage direct current mass impregnated paper cable  

SciTech Connect (OSTI)

Partial discharge measurement has been a good tool for the quality assurance of cables under alternating voltage. With the growing interest in High Voltage Direct Current cables it seems therefore logical to extend this technique for use at direct voltage. The paper describes this technique as used on a HVDC cable with mass impregnated paper. The different phases of operation (no load, full load, cooling phase, etc.) are characterized by a different discharge behavior. Special attention is given to the dangerous cooling phase. Models have been developed which can explain the discharge patterns that were measured. This paper gives an insight in the electrical behavior of a HVDC cable with mass impregnated paper insulation.

Jeroense, M.J.P. [NKF KABEL B.V., Delft (Netherlands); Kreuger, F.H. [Delft Univ. of Technology (Netherlands)

1996-12-31T23:59:59.000Z

182

Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities  

SciTech Connect (OSTI)

There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity.

Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; /Fermilab; Norem, J.; /Argonne; Li, D.; Zisman, M.; /LBL, Berkeley; Torun, Y.; /IIT, Chicago; Rimmer, R.; /Jefferson Lab; Errede,; /Illinois U., Urbana

2005-10-01T23:59:59.000Z

183

A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives  

SciTech Connect (OSTI)

The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105?C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

None, None

2012-01-31T23:59:59.000Z

184

Using Dielectric Losses to De-Ice Power Transmission Lines with 100 kHz High-Voltage  

E-Print Network [OSTI]

Using Dielectric Losses to De-Ice Power Transmission Lines with 100 kHz High-Voltage Excitation J DIELECTRIC LOSSES TO DE-ICE POWER TRANSMISSION LINES . . . 1 Using Dielectric Losses to De-Ice Power Transmission Lines with 100 kHz High-Voltage Excitation Joshua D. McCurdy, Charles R. Sullivan and Victor F

185

Round-robin artificial contamination test on high voltage dc insulators  

SciTech Connect (OSTI)

This paper summarizes the results of a worldwide round-robin test of high voltage dc (HVDC) insulators, which was carried out in six laboratories aiming at standardization of the method for artificial contamination tests on HVDC insulators. Flashover characteristics of three kinds of specimens were evaluated by the clean fog and the salt fog procedures. Sufficient information is now available to allow the preparation of provisional international specifications for artificial contamination testing of HVDC insulators.

Naito, K.; Schneider, H.M.

1995-07-01T23:59:59.000Z

186

A narrow-band high-speed switched-capacitor sixth order bandpass ladder filter  

E-Print Network [OSTI]

In narrow-band high-speed switched-capacitor filters, the main limitation comes from the capacitance spread and from amplifier settling time. A secondary clock, that averages at an integer fraction of the main clock signal, is used to reduce...

Adut, Jozef

2002-01-01T23:59:59.000Z

187

Analysis and Design of an Organic High Speed Digital Electro-Optic Switch  

E-Print Network [OSTI]

We have analyzed and designed an organic high speed digital optical switch (DOS) based on transverse electro-optic effect. In analysis section, we proposed a quantum photonic model (QPM) to explain linear electro-optic (EO) effect. This model interpret this effect by photon-electron interaction in attosecond regime. We simulate applied electric field on molecule and crystal by Monte-Carlo method in time domain. We show how a waveguide response to an optical signal with different wavelengths when a transverse electric field applied to the waveguide. In design section, we configure conceptually a 2 * 2 EO switch with full adiabatic coupler. In this DOS, we use a rib waveguides that its core has been constructed from NPP crystal. This switch is smaller at least to one-half of similar DOS in dimensions.

Ali Akbar Wahedy Zarch; Hassan Kaatuzian; Ahmad Ajdarzadeh Oskouei; Ahmad Amjadi

2007-05-09T23:59:59.000Z

188

Analysis and Design of an Organic High Speed Digital Electro-Optic Switch  

E-Print Network [OSTI]

We have analyzed and designed an organic high speed digital optical switch (DOS) based on transverse electro-optic effect. In analysis section, we proposed a quantum photonic model (QPM) to explain linear electro-optic (EO) effect. This model interpret this effect by photon-electron interaction in attosecond regime. We simulate applied electric field on molecule and crystal by Monte-Carlo method in time domain. We show how a waveguide response to an optical signal with different wavelengths when a transverse electric field applied to the waveguide. In design section, we configure conceptually a 2 * 2 EO switch with full adiabatic coupler. In this DOS, we use a rib waveguides that its core has been constructed from NPP crystal. This switch is smaller at least to one-half of similar DOS in dimensions.

Zarch, Ali Akbar Wahedy; Oskouei, Ahmad Ajdarzadeh; Amjadi, Ahmad

2007-01-01T23:59:59.000Z

189

Power conversion architecture for grid interface at high switching frequency  

E-Print Network [OSTI]

This paper presents a new power conversion architecture for single-phase grid interface. The proposed architecture is suitable for realizing miniaturized ac-dc converters operating at high frequencies (HF, above 3 MHz) and ...

Lim, Seungbum

190

Marine High Voltage Power Conditioning and Transmission System with Integrated Storage DE-EE0003640 Final Report  

SciTech Connect (OSTI)

Design, Development, and test of the three-port power converter for marine hydrokinetic power transmission. Converter provides ports for AC/DC conversion of hydrokinetic power, battery storage, and a low voltage to high voltage DC port for HVDC transmission to shore. The report covers the design, development, implementation, and testing of a prototype built by PPS.

Frank Hoffmann, PhD; Aspinall, Rik

2012-12-10T23:59:59.000Z

191

Novel Nonflammable Electrolytes for Secondary Magnesium Batteries and High Voltage Electrolytes for Electrochemcial Supercapacitors  

SciTech Connect (OSTI)

Magnesium has been used successfully in primary batteries, but its use in rechargeable cells has been stymied by the lack of suitable non-aqueous electrolyte that can conduct Mg+2 species, combined with poor stripping and plating properties. The development of a suitable cathode material for rechargeable magnesium batteries has also been a roadblock, but a nonflammable electrolyte is key. Likewise, the development of safe high voltage electrochemical supercapaitors has been stymied by the use of flammable solvents in the liquid electrolyte; to wit, acetonitrile. The purpose of the research conducted in this effort was to identify useful compositions of magnesium salts and polyphosphate solvents that would enable magnesium ions to be cycled within a secondary battery design. The polyphosphate solvents would provide the solvent for the magnesium salts while preventing the electrolyte from being flammable. This would enable these novel electrolytes to be considered as an alternative to THF-based electrolytes. In addition, we explored several of these solvents together with lithium slats for use as high voltage electrolytes for carbon-based electrochemical supercapacitors. The research was successful in that: 1) Magnesium imide dissolved in a phosphate ester solvent that contains a halogented phosphate ester appears to be the preferred electrolyte for a rechargeable Mg cell. 2) A combination of B-doped CNTs and vanadium phosphate appear to be the cathode of choice for a rechargeable Mg cell by virtue of higher voltage and better reversibility. 3) Magnesium alloys appear to perform better than pure magnesium when used in combination with the novel polyphosphate electrolytes. Also, this effort has established that Phoenix Innovationâ??s family of phosphonate/phosphate electrolytes together with specific lithium slats can be used in supercapacitor systems at voltages of greater than 10V.

Dr. Brian Dixon

2008-12-30T23:59:59.000Z

192

An optical fan for light beams for high-precision optical measurements and optical switching  

E-Print Network [OSTI]

The polarization and orbital angular momentum properties of light are of great importance in optical science and technology in the fields of high precision optical measurements and high capacity and high speed optical communications. Here we show, a totally new method, based on a combination of these two properties and using the thermal dispersion and electro-optical effect of birefringent crystals, the construction of a simple and robust scheme to rotate a light beam like a fan. Using a computer-based digital image processing technique, we determine the temperature and the thermal dispersion difference of the crystal with high resolution. We also use the rotation phenomenon to realize thermo-optic and electro-optic switches. The basic operating principles for measurement and switching processes are presented in detail. The methods developed here will have wide practical applicability in various fields, including remote sensing, materials science and optical communication networks.

Zhi-Yuan Zhou; Yan Li; Dong-Sheng Ding; Yun-Kun Jiang; Wei Zhang; Shuai Shi; Bao-Sen Shi; Guang-Can Guo

2014-05-08T23:59:59.000Z

193

Electrocaloric devices based on thini-film heat switches  

SciTech Connect (OSTI)

We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

Epstein, Richard I [Los Alamos National Laboratory; Malloy, Kevin J [UNM

2009-01-01T23:59:59.000Z

194

Single-crystalline monolayer and multilayer graphene nano switches  

SciTech Connect (OSTI)

Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1?V, and high switching speed about 100?ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

Li, Peng; Cui, Tianhong, E-mail: tcui@me.umn.edu [State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University, Beijing 100084 (China); Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Jing, Gaoshan [State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University, Beijing 100084 (China); Zhang, Bo; Sando, Shota [Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

2014-03-17T23:59:59.000Z

195

A new class of high force, low-voltage, compliant actuation system  

SciTech Connect (OSTI)

Although many actuators employing electrostatic comb drives have been demonstrated in a laboratory environment, widespread acceptance in mass produced microelectromechanical systems (MEMS) may be limited due to issues associated with low drive force, large real estate demands, high operating voltages, and reliability concerns due to stiction. On the other hand, comb drives require very low drive currents, offer predictable response, and are highly compatible with the fabrication technology. The expand the application space and facilitate the widespread deployment of self-actuated MEMS, a new class of advanced actuation systems has been developed that maintains the highly desirable aspects of existing components, while significantly diminishing the issues that could impede large scale acceptance. In this paper, the authors will present low-voltage electrostatic actuators that offer a dramatic increase in force over conventional comb drive designs. In addition, these actuators consume only a small fraction of the chip area previously used, yielding significant gains in power density. To increase the stroke length of these novel electrostatic actuators, the authors have developed highly efficient compliant stroke amplifiers. The coupling of compact, high-force actuators with fully compliant displacement multipliers sets a new paradigm for highly integrated microelectromechanical systems.

RODGERS,M. STEVEN; KOTA,SRIDHAR; HETRICK,JOEL; LI,ZHE; JENSEN,BRIAN D.; KRYGOWSKI,THOMAS W.; MILLER,SAMUEL L.; BARNES,STEPHEN MATTHEW; BURG,MICHAEL STANLEY

2000-04-10T23:59:59.000Z

196

High efficiency resonant dc/dc converter for solar power applications  

E-Print Network [OSTI]

This thesis presents a new topology for a high efficiency dc/dc resonant power converter that utilizes a resistance compression network to provide simultaneous zero voltage switching and near zero current switching across ...

Inam, Wardah

2013-01-01T23:59:59.000Z

197

DC BUFFERING AND FLOATING CURRENT FOR A HIGH VOLTAGE IMB APPLICATION  

SciTech Connect (OSTI)

An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

J.L. Morrison

2014-08-01T23:59:59.000Z

198

IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 47, NO. 8, AUGUST 2012 1935 A Switched-Inductor Integrated Voltage Regulator  

E-Print Network [OSTI]

IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 47, NO. 8, AUGUST 2012 1935 A Switched on computational performance in modern microprocessors and systems-on-chip is power consumption. Battery life

Carloni, Luca

199

A high voltage test stand for electron gun qualification for LINACs  

SciTech Connect (OSTI)

An electron gun lest stand has been developed at RRCAT. The test stand consists of a high voltage pulsed power supply, electron gun filament supply, grid supply, UHV system and electron gun current measurement system. Several electron guns developed indigenously were evaluated on this test stand. The shielding is provided for the electron gun set up. Electron gun tests can be tested upto 55 kV with pulse width of 15 microsecs and pulse repetition rates up to 200 Hz. The technical details of the subsystems are furnished and results of performance of the test stand have been reported in this paper. (author)

Wanmode, Yashwant D.; Mulchandani, J.; Acharya, M.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam, E-mail: yash@rrcat.gov.in [Pulsed High Power Microwave Section, Raja Ramanna Centre for Advanced Technology, Indore (India)

2011-07-01T23:59:59.000Z

200

Studies on High Voltage Lithium Rich MNC Composite Cathodes | Department of  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
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201

Solid state switch  

DOE Patents [OSTI]

A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

Merritt, Bernard T. (Livermore, CA); Dreifuerst, Gary R. (Livermore, CA)

1994-01-01T23:59:59.000Z

202

High-Q silica zipper cavity for optical radiation pressure driven MOMS switch  

SciTech Connect (OSTI)

We design a silica zipper cavity that has high optical and mechanical Q (quality factor) values and demonstrate numerically the feasibility of a radiation pressure driven micro opto-mechanical system (MOMS) directional switch. The silica zipper cavity has an optical Q of 4.0 × 10{sup 4} and an effective mode volume V{sub mode} of 0.67?{sup 3} when the gap between two cavities is 34 nm. The mechanical Q (Q{sub m}) is determined by thermo-elastic damping and is 2.0 × 10{sup 6} in a vacuum at room temperature. The opto-mechanical coupling rate g{sub OM} is as high as 100 GHz/nm, which allows us to move the directional cavity-waveguide system and switch 1550-nm light with 770-nm light by controlling the radiation pressure.

Tetsumoto, Tomohiro; Tanabe, Takasumi, E-mail: takasumi@elec.keio.ac.jp [Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi Kohoku, Yokohama 223-8522 (Japan)

2014-07-15T23:59:59.000Z

203

Power applications of high-temperature superconductivity: Variable speed motors, current switches, and energy storage for end use  

SciTech Connect (OSTI)

The objective of this project is to conduct joint research and development activities related to certain electric power applications of high-temperature superconductivity (HTS). The new superconductors may allow development of an energy-efficient switch to control current to variable speed motors, superconducting magnetic energy storage (SMES) systems, and other power conversion equipment. Motor types that were considered include induction, permanent magnet, and superconducting ac motors. Because it is impractical to experimentally alter certain key design elements in radial-gap motors, experiments were conducted on an axial field superconducting motor prototype using 4 NbTi magnets. Superconducting magnetic energy storage technology with 0.25--5 kWh stored energy was studied as a viable solution to short duration voltage sag problems on the customer side of the electric meter. The technical performance characteristics of the device wee assembled, along with competing technologies such as active power line conditioners with storage, battery-based uninterruptible power supplies, and supercapacitors, and the market potential for SMES was defined. Four reports were prepared summarizing the results of the project.

Hawsey, R.A. [Oak Ridge National Lab., TN (United States); Banerjee, B.B.; Grant, P.M. [Electric Power Research Inst., Palo Alto, CA (United States)

1996-08-01T23:59:59.000Z

204

The commercial development of water repellent coatings for high voltage transmission lines  

SciTech Connect (OSTI)

The purpose of the Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC and Southwire Company was to jointly develop a low cost, commercially viable, water-repellant anti-icing coating system for high voltage transmission lines. Icing of power lines and other structures caused by freezing rain events occurs annually in the United States, and leads to severe and prolonged power outages. These outages cause untold economic and personal distress for many American families and businesses. Researchers at the Department of Energy s Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee have previously developed a set of superhydrophobic coatings with remarkable anti-icing properties that could potentially be sprayed or painted onto high-tension power lines and pylons. These coatings drastically reduce ice accumulation on these structures during freezing rain events. The project involved obtaining technical input, supplies and test high voltage cables from Southwire, along with the joint development of anti-icing coating techniques, which would result in a commercial license agreement between Southwire and ORNL, and potentially other companies requiring water repellent anti-icing coatings.

Hunter, Scott Robert [ORNL

2013-10-01T23:59:59.000Z

205

The commercial development of water repellent coatings for high voltage transmission lines  

SciTech Connect (OSTI)

The purpose of the Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC and Southwire Company was to jointly develop a low cost, commercially viable, water-repellant anti-icing coating system for high voltage transmission lines. Icing of power lines and other structures caused by freezing rain events occurs annually in the United States, and leads to severe and prolonged power outages. These outages cause untold economic and personal distress for many American families and businesses. Researchers at the Department of Energy?s Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee have previously developed a set of superhydrophobic coatings with remarkable anti-icing properties that could potentially be sprayed or painted onto high-tension power lines and pylons. These coatings drastically reduce ice accumulation on these structures during freezing rain events. The project involved obtaining technical input, supplies and test high voltage cables from Southwire, along with the joint development of anti-icing coating techniques, which would result in a commercial license agreement between Southwire and ORNL, and potentially other companies requiring water repellent anti-icing coatings.

Hunter, S. R. [ORNL] [ORNL; Daniel, A. [Southwire Company] [Southwire Company

2013-10-31T23:59:59.000Z

207

Isolated and soft-switched power converter  

DOE Patents [OSTI]

An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

Peng, Fang Zheng (Knoxville, TN); Adams, Donald Joe (Knoxville, TN)

2002-01-01T23:59:59.000Z

208

Measurement of low radioactivity background in a high voltage cable by high resolution inductively coupled plasma mass spectrometry  

SciTech Connect (OSTI)

The measurement of naturally occurring low level radioactivity background in a high voltage (HV) cable by high resolution inductively coupled plasma mass spectrometry (HR ICP MS) is presented in this work. The measurements were performed at the Chemistry Service of the Gran Sasso National Laboratory. The contributions to the radioactive background coming from the different components of the heterogeneous material were separated. Based on the mass fraction of the cable, the whole contamination was calculated. The HR ICP MS results were cross-checked by gamma ray spectroscopy analysis that was performed at the low background facility STELLA (Sub Terranean Low Level Assay) of the LNGS underground lab using HPGe detectors.

Vacri, M. L. di; Nisi, S.; Balata, M. [Gran Sasso National Laboratory, Chemistry Service, SS 17bis km 18.910, 67100 Assergi (Aq) (Italy)] [Gran Sasso National Laboratory, Chemistry Service, SS 17bis km 18.910, 67100 Assergi (Aq) (Italy)

2013-08-08T23:59:59.000Z

209

Stabilization of turbulent lifted jet flames assisted by pulsed high voltage discharge  

SciTech Connect (OSTI)

To reduce fuel consumption or the pollutant emissions of combustion (furnaces, aircraft engines, turbo-reactors, etc.), attempts are made to obtain lean mixture combustion regimes. These lead to poor stability of the flame. Thus, it is particularly interesting to find new systems providing more flexibility in aiding flame stabilization than the usual processes (bluff-body, stabilizer, quarl, swirl, etc.). The objective is to enlarge the stability domain of flames while offering flexibility at a low energy cost. Evidence is presented that the stabilization of a turbulent partially premixed flame of more than 10 kW can be enhanced by pulsed high-voltage discharges with power consumption less than 0.1% of the power of the flame. The originality of this work is to demonstrate that very effective stabilization of turbulent flames is obtained when high-voltage pulses with very short rise times are used (a decrease by 300% in terms of liftoff height for a given exit jet velocity can be reached) and to provide measurements of minimum liftoff height obtained with discharge over a large range of the stability domain of the lifted jet flame.

Criner, K.; Cessou, A.; Louiche, J.; Vervisch, P. [CORIA UMR 6614 CNRS-Universite et INSA de Rouen, University of Rouen, 76801 Saint Etienne du Rouvray (France)

2006-01-01T23:59:59.000Z

210

High voltage power supply systems for electron beam and plasma technologies. Its new element base  

SciTech Connect (OSTI)

Transforming technique and high voltage technique supplementing each other more and more unite in indivisible constructions of modern apparatuses and systems and applicated in modern technologies providing its high efficiency. Specially worked out, ecologically clean, inertial, inflammable perfluororganic liquid is used in elements and electronic apparatuses simultaneously as insulating and cooling media. This liquid is highly fluid, fills tiny cavities in construction elements and in the places of high concentration of losses, where maximum local overheating of active parts or apparatus constructions takes place, it transforms to boiling state with highly intensive taking off of heat energy from cooled surface point. For instance, being cooled by mentioned perfluororganic liquid, copper wire can conduct current to 50 A/mm{sup 2} density, but in ordinary conditions of transformers, reactors and busses, current density can reach only few Amperes. Possibility of considerable increasing of current density, that is reached by means of intensive cooling, provided by worked out liquid, and taking into account its incredibly high insulating features (liquid has electric strength to 50 KV/mm) allows to provide optimum heat regime of active parts of transformers. reactors, condenser, semiconductor devices, resistors, construction elements and electrotechnical apparatus in general. Particularly high effect of decreasing of weight and dimensions characteristics of elements and electrotechnical apparatus in general can be reached under working out of special constructions of each element and apparatus details, adapted to use of mentioned liquid as insulating and cooling media.

Dermengi, P.G.; Kureghan, A.S.; Pokrovsky, S.V.; Tchvanov, V.A.

1994-12-31T23:59:59.000Z

211

C-H surface diamond field effect transistors for high temperature (400?°C) and high voltage (500?V) operation  

SciTech Connect (OSTI)

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400?°C (673?K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600?V at a gate-drain distance (L{sub GD}) of 7 ?m. We fabricated some MOSFETs for which V{sub B}/L{sub GD}?>?100?V/?m. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-H surface by atomic layer deposition (ALD) at 450?°C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400?°C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400?°C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.

Kawarada, H., E-mail: kawarada@waseda.jp [Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051 (Japan); Tsuboi, H.; Naruo, T.; Yamada, T.; Xu, D.; Daicho, A.; Saito, T. [Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Hiraiwa, A. [Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)

2014-07-07T23:59:59.000Z

212

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output  

SciTech Connect (OSTI)

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

Dinetta, L.C.; Hannon, M.H.

1995-10-01T23:59:59.000Z

213

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications  

SciTech Connect (OSTI)

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

2014-01-01T23:59:59.000Z

214

High open circuit voltages of solar cells based on quantum dot and dye hybrid-sensitization  

SciTech Connect (OSTI)

A type of solar cell based on quantum dot (QD) and dye hybrid-sensitized mesoporous TiO{sub 2} film electrode was designed and reported. The electrode was consisted of a TiO{sub 2} nanoparticle (NP) thin film layer sensitized with CdS quantum dot (QD) and an amorphous TiO{sub 2} coated TiO{sub 2} NP thin film layer that sensitized with C106 dye. The amorphous TiO{sub 2} layer was obtained by TiCl{sub 4} post-treatment to improve the properties of solar cells. Research showed that the solar cells fabricated with as-prepared hybrid-sensitized electrode exhibited excellent photovoltaic performances and a fairly high open circuit voltage of 796?mV was achieved.

Zhao, Yujie; Zhao, Wanyu; Chen, Jingkuo; Li, Huayang; Fu, Wuyou, E-mail: hari@hpu.edu.cn, E-mail: fuwy56@163.com; Sun, Guang; Cao, Jianliang; Zhang, Zhanying [School of Materials Science and Engineering and Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Henan Polytechnic University, Jiaozuo 454000 (China)] [School of Materials Science and Engineering and Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Henan Polytechnic University, Jiaozuo 454000 (China); Bala, Hari, E-mail: hari@hpu.edu.cn, E-mail: fuwy56@163.com [School of Materials Science and Engineering and Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Henan Polytechnic University, Jiaozuo 454000 (China) [School of Materials Science and Engineering and Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Henan Polytechnic University, Jiaozuo 454000 (China); College of Chemistry and Chemical Engineering, Inner Mongolia University for the Nationalities, Tongliao 028043 (China)

2014-01-06T23:59:59.000Z

215

Process for measuring degradation of sulfur hexafluoride in high voltage systems  

DOE Patents [OSTI]

This invention is a method of detecting the presence of toxic and corrosive by-products in high voltage systems produced by electrically induced degradation of SF/sub 6/ insulating gas in the presence of certain impurities. It is an improvement over previous methods because it is extremely sensitive, detecting by-products present in parts per billion concentrations, and because the device employed is of a simple design and takes advantage of the by-products natural affinity for fluoride ions. The method employs an ion-molecule reaction cell in which negative ions of the by-products are produced by fluorine attachment. These ions are admitted to a negative ion mass spectrometer and identified by their spectra. This spectrometry technique is an improvement over conventional techniques because the negative ion peaks are strong and not obscured by a major ion spectra of the SF/sub 6/ component as is the case in positive ion mass spectrometry.

Sauers, I.

1985-04-23T23:59:59.000Z

216

Transparent electrode for optical switch  

DOE Patents [OSTI]

The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

Goldhar, J.; Henesian, M.A.

1984-10-19T23:59:59.000Z

217

Low-Variation 1 MHz Clock Generator,High Sensitivity Linear Voltage-to-Frequency Converter,and High-PSR Bias Circuit for NTSC SYNC Separation.  

E-Print Network [OSTI]

??This thesis includes three topics. The first topic is a low-variation 1 MHz clock generator. The second one is a high sensitivity linear voltage-to-frequency converter.… (more)

Lee, Tzung-Je

2004-01-01T23:59:59.000Z

218

Integration of offshore wind farms through High Voltage Direct Current networks.  

E-Print Network [OSTI]

??The integration of offshore wind farms through Multi Terminal DC (MTDC) networks into the GB network was investigated. The ability of Voltage Source Converter (VSC)… (more)

Livermore, Luke

2013-01-01T23:59:59.000Z

219

Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters  

SciTech Connect (OSTI)

Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

None

2012-02-13T23:59:59.000Z

220

FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS  

E-Print Network [OSTI]

FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS of Michigan, Ann Arbor, MI 48109, USA ABSTRACT Hydrogenated amorphous silicon (a-Si:H) single- junction solar). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains

Deng, Xunming

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Mechanisms of deflagration-to-detonation transition under initiation by high-voltage nanosecond discharges  

SciTech Connect (OSTI)

An experimental study of detonation initiation in a stoichiometric propane-oxygen mixture by a high-voltage nanosecond gas discharge was performed in a detonation tube with a single-cell discharge chamber. The discharge study performed in this geometry showed that three modes of discharge development were realized under the experimental conditions: a spark mode with high-temperature channel formation, a streamer mode with nonuniform gas excitation, and a transient mode. Under spark and transient initiation, simultaneous ignition inside the discharge channel occurred, forming a shock wave and leading to a conventional deflagration-to-detonation transition (DDT) via an adiabatic explosion. The DDT length and time at 1 bar of initial pressure in the square smooth tube with a 20-mm transverse size amounted to 50 mm and 50{mu}s, respectively. The streamer mode of discharge development at an initial pressure of 1 bar resulted in nonuniform mixture excitation and a successful DDT via a gradient mechanism, which was confirmed by high-speed time resolved ICCD imaging. The gradient mechanism implied a longer DDT time of 150{mu}s, a DDT run-up distance of 50 mm, and an initiation energy of 1 J, which is two orders of magnitude less than the direct initiation energy for a planar detonation under these conditions. (author)

Rakitin, Aleksandr E.; Starikovskii, Andrei Yu. [Physics of Nonequilibrium Systems Lab, Moscow Institute of Physics and Technology, 9 Institutski Lane, Dolgoprudny 141700 (Russian Federation)

2008-10-15T23:59:59.000Z

222

Atmospheric pressure plasma jet with high-voltage power supply based on piezoelectric transformer  

SciTech Connect (OSTI)

The dielectric barrier discharge plasma jet, an example of the nonthermal atmospheric pressure plasma jet (APPJ), generates low-temperature plasmas that are suitable for the atomization of volatile species and can also be served as an ionization source for ambient mass and ion mobility spectrometry. A new design of APPJ for mass spectrometry has been built in our group. In these plasma sources magnetic transformers (MTs) and inductors are typically used in power supplies but they present several drawbacks that are even more evident when dealing with high-voltage normally used in APPJs. To overcome these disadvantages, high frequency generators with the absence of MT are proposed in the literature. However, in the case of miniaturized APPJs these conventional power converters, built of ferromagnetic cores and inductors or by means of LC resonant tank circuits, are not so useful as piezoelectric transformer (PT) based power converters due to bulky components and small efficiency. We made and examined a novel atmospheric pressure plasma jet with PT supplier served as ionization source for ambient mass spectrometry, and especially mobile spectrometry where miniaturization, integration of components, and clean plasma are required. The objective of this paper is to describe the concept, design, and implementation of this miniaturized piezoelectric transformer-based atmospheric pressure plasma jet.

Babij, Micha?; Kowalski, Zbigniew W., E-mail: zbigniew.w.kowalski@pwr.wroc.pl; Nitsch, Karol; Gotszalk, Teodor [Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)] [Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland); Silberring, Jerzy [AGH University of Science and Technology, Al. A. Mickiewicza 30, 30-059 Kraków (Poland)] [AGH University of Science and Technology, Al. A. Mickiewicza 30, 30-059 Kraków (Poland)

2014-05-15T23:59:59.000Z

223

Design of high order switched resistor momolithic filters using NMOS technology  

E-Print Network [OSTI]

-aliasing filter is used to band-limit the input signal. 3 Switched Capacitor representation of a resistor, a) Switched Capacitor, b) Fixed Resistor. . . . . . . . . . Basic Switched Resistor Block. a) Switched Resistor, b) Fixed Resistor. 5 Switched.... VBS for depletion and enhancement transistors. 18 9 IO vs YDS curves for depletion (a, c), and enhancement (b, d) transistors (YBS= 0 V). a) II/L= 1, b) M/L= 1, c) Vi/L= . 5, d) V(/L= 5 19 10 DC resistance for an NMOS transistor vs. VGS (W/L= . 3...

Aguilar, Raul Antonio

1983-01-01T23:59:59.000Z

224

A three-level buck converter to regulate a high-voltage DC-to-AC inverter  

E-Print Network [OSTI]

A three-level buck converter is designed and analyzed, and shown to be suitable as a high-voltage down converter as a pre-regulation stage for a 600 watt DC-to-AC power inverter. Topology selection for the inverter is ...

Schrock, Kenneth C

2008-01-01T23:59:59.000Z

225

Solid state switch  

DOE Patents [OSTI]

A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

Merritt, B.T.; Dreifuerst, G.R.

1994-07-19T23:59:59.000Z

226

Multilevel cascade voltage source inverter with seperate DC sources  

DOE Patents [OSTI]

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Peng, Fang Zheng (Oak Ridge, TN); Lai, Jih-Sheng (Knoxville, TN)

1997-01-01T23:59:59.000Z

227

Multilevel cascade voltage source inverter with separate DC sources  

DOE Patents [OSTI]

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

Peng, F.Z.; Lai, J.S.

1997-06-24T23:59:59.000Z

228

Multilevel cascade voltage source inverter with seperate DC sources  

DOE Patents [OSTI]

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Peng, Fang Zheng (Knoxville, TN); Lai, Jih-Sheng (Blacksburg, VA)

2002-01-01T23:59:59.000Z

229

Graphene-oxide-coated LiNi0.5Mn1.5O4 as high voltage cathode for lithium ion batteries with high energy  

E-Print Network [OSTI]

Graphene-oxide-coated LiNi0.5Mn1.5O4 as high voltage cathode for lithium ion batteries with high Since Sony rst commercialized lithium ion batteries in the early 1990s, the market for lithium ion of the great success of lithium ion battery technology developed for portable electronic devices, higher

Zhou, Chongwu

230

High voltage capability electrical coils insulated with materials containing SF.sub.6 gas  

DOE Patents [OSTI]

A coil is made having a plurality of layers of adjacent metal conductor windings subject to voltage stress, where the windings have insulation therebetween containing a small number of minute disposed throughout its cross-section, where the voids are voids filled with SF.sub.6 gas to substitute for air or other gaseous materials in from about 60% to about 95% of the cross-sectional void volume in the insulation, thus incorporating an amount of SF.sub.6 gas in the cross-section of the insulation effective to substantially increase corona inception voltages.

Lanoue, Thomas J. (Muncie, IN); Zeise, Clarence L. (Penn Township, Allegheny County, PA); Wagenaar, Loren (Muncie, IN); Westervelt, Dean C. (Acme, PA)

1988-01-01T23:59:59.000Z

231

Plasma Immersion Ion Implantation with a 4kV/10kHz Compact High Voltage Pulser  

SciTech Connect (OSTI)

Development of a 4 kV/10 kHz Compact High Voltage Pulser and its application to nitrogen plasma immersion ion implantation (PIII) of different materials as Si, Al alloys, SS304 stainless steel and Ti alloys are discussed. Low voltage (1-5 kV) pulses at high frequencies (up to 20 kHz for 2 kV) were obtained with maximum power delivered at 5 kV, 7 kHz. These conditions were not sufficient to reach temperatures above 200 deg. C in the samples because of short duration of the pulses. However, very shallow implantations of nitrogen in Si, Al5052, SS304 were observed by Auger electron spectroscopy and improved corrosion resistance was obtained for Al5052 when it was treated by nitrogen PIII at 2.5 kV, 5{mu}s and 5 kHz pulses.

Ueda, M.; Oliveira, R. M.; Rossi, J. O. [Associated Laboratory of Plasma, National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos, Sao Paulo (Brazil); Reuther, H. [Institute of Ion Beam Physics and Materials Research, Rossendorf, Dresden (Germany); Silva, G. [Associated Laboratory of Plasma, National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos, Sao Paulo (Brazil); Department of Aeronautics and Mechanics, Technological Institute of Aeronautics, Sao Jose dos Campos, Sao Paulo (Brazil)

2006-11-13T23:59:59.000Z

232

Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes  

SciTech Connect (OSTI)

We investigate the properties of N,N?-[(Diphenyl-N,N?-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N?,N?-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2?,7,7?-tetrakis(N,N?-di-p-methylphenylamino)-9,9?-spirobifluorene (Spiro-TTB), and N,N?-di(naphtalene-1-yl)-N,N?-diphenylbenzidine (NPB). The influence of 2,2?-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4?wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35?.1?lm/W (74?.0?lm/W) at 1000?cd/m{sup 2} and reach a very high brightness of 10?000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

Murawski, Caroline, E-mail: caroline.murawski@iapp.de; Fuchs, Cornelius; Hofmann, Simone; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS Scotland (United Kingdom)

2014-09-15T23:59:59.000Z

233

A Transformer-less Partial Power Boost Converter for PV Applications Using a Three-Level Switching Cell  

SciTech Connect (OSTI)

Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semiconductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.

Mohammed Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Somasundaram Essakiappan

2013-03-01T23:59:59.000Z

234

Optical voltage reference  

DOE Patents [OSTI]

An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

Rankin, R.; Kotter, D.

1994-04-26T23:59:59.000Z

235

Design of a fast-settling OTA for high frequency switched-capacitor applications  

E-Print Network [OSTI]

amplifiers (opamps). Low voltage and low poer operation, one of the main industrial trends, however, puts significant challenges to analog circuit designers. In current digital-dominant technology, CMOS devices have become more suitable for digital circuit...

Park, Jinki

2012-06-07T23:59:59.000Z

236

Cygnus Diverter Switch Analysis  

SciTech Connect (OSTI)

The Cygnus Dual Beam Radiographic Facility consists of two 2.25-MV, 60-kA, 50-ns x-ray sources fielded in an underground laboratory at the Nevada Test Site. The tests performed in this laboratory involve study of the dynamic properties of plutonium and are called subcritical experiments. From end-to-end, the Cygnus machines utilize the following components: Marx generator, water-filled pulse-forming line (PFL), waterfilled coaxial transmission line (WTL), 3-cell inductive voltage adder (IVA), and rod-pinch diode. The upstream WTL interface to the PFL is via a radial insulator with coaxial geometry. The downstream WTL terminates in a manifold where the center conductor splits into three lines which individually connect to each of the IVA cell inputs. There is an impedance mismatch at this juncture. It is a concern that a reflected pulse due to anomalous behavior in the IVA or diode might initiate breakdown upon arrival at the upstream PFL/WTL insulator. Therefore near the beginning of the WTL a radial diverter switch is installed to protect the insulator from over voltage and breakdown. The diverter has adjustable gap spacing, and an in-line aqueous-solution (sodium thiosulfate) resistor array for energy dissipation. There are capacitive voltage probes at both ends of the WTL and on the diverter switch. These voltage signals will be analyzed to determine diverter performance. Using this analysis the usefulness of the diverter switch will be evaluated.

G. Corrow, M. Hansen, D. Henderson, C. Mitton et al.

2008-02-01T23:59:59.000Z

237

High speed transfer switch with 50 kA and 50 kV  

SciTech Connect (OSTI)

This paper gives the mechanical design and electrical parameters of a pneumatically operated transfer switch. This design is used to switch 3-second 50-kA current pulses, and is easily capable of 75 kA operation (2 {times} 10{sup 10} I{sup 2}t); with water-cooled versions capable of 20 kA continuously. Although the switch is not specifically designed to make or break 50 kA, it is provided with auxiliary Elkonite arcing contacts have proven their value in protecting the main electrodes even under repetitive (50 kA) fault conditions. Included in this presentation will be the results of extensive life testing and associated criteria. 6 figs., 1 tab.

Reass, W.A.; Kasik, R.J.; Wilds, W.A.

1989-01-01T23:59:59.000Z

238

Analysis of system wide distortion in an integrated power system utilizing a high voltage DC bus and silicon carbide power devices  

E-Print Network [OSTI]

This research investigates the distortion on the electrical distribution system for a high voltage DC Integrated Power System (IPS). The analysis was concentrated on the power supplied to a propulsion motor driven by an ...

Fallier, William F. (William Frederick)

2007-01-01T23:59:59.000Z

239

Recommended practice for fire protection for electric generating plants and high voltage direct current converter stations. 2005 ed.  

SciTech Connect (OSTI)

The standard outlines fire safety recommendations for gas, oil, coal, and alternative fuel electric generating plants including high voltage direct current converter stations and combustion turbine units greater than 7500 hp used for electric generation. Provisions apply to both new and existing plants. The document provides fire prevention and fire protection recommendations for the: safety of construction and operating personnel; physical integrity of plant components; and continuity of plant operations. The 2005 edition includes revisions and new art that clarify existing provisions. 5 annexes.

NONE

2005-07-01T23:59:59.000Z

240

Modeling, simulation, and testing of the mechanical dynamics of and RF MEMS switch.  

SciTech Connect (OSTI)

Mechanical dynamics can be a determining factor for the switching speed of radio-frequency microelectromechanical systems (RF MEMS) switches. This paper presents the simulation of the mechanical motion of a microswitch under actuation. The switch has a plate suspended by springs. When an electrostatic actuation is applied, the plate moves toward the substrate and closes the switch. Simulations are calculated via a high-fidelity finite element model that couples solid dynamics with electrostatic actuation. It incorporates non-linear coupled dynamics and accommodates fabrication variations. Experimental modal analysis gives results in the frequency domain that verifies the natural frequencies and mode shapes predicted by the model. An effective 1D model is created and used to calculate an actuation voltage waveform that minimizes switch velocity at closure. In the experiment, the switch is actuated with this actuation voltage, and the displacements of the switch at various points are measured using a laser Doppler velocimeter through a microscope. The experiments are repeated on several switches from different batches. The experimental results verify the model.

Sumali, Hartono; Epp, David S.; Massad, Jordan Elias; Dyck, Christopher William; Starr, Michael James

2005-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability  

SciTech Connect (OSTI)

We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d{sub 31} coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices.

Wang, Qi; Wang, Junting; Lu, Qingyou, E-mail: qxl@ustc.edu.cn [High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei, Anhui 230026 (China) [High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei, Anhui 230026 (China); Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Hou, Yubin [High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei, Anhui 230026 (China)] [High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei, Anhui 230026 (China)

2013-11-15T23:59:59.000Z

242

Thermally actuated thermionic switch  

DOE Patents [OSTI]

A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

Barrus, D.M.; Shires, C.D.

1982-09-30T23:59:59.000Z

243

Improving the performance of stainless-steel DC high voltage photoelectron gun cathode electrodes via gas conditioning with helium or krypton  

SciTech Connect (OSTI)

Gas conditioning was shown to eliminate field emission from cathode electrodes used inside DC high voltage photoelectron guns, thus providing a reliable means to operate photoguns at higher voltages and field strengths. Measurements and simulation results indicate that gas conditioning eliminates field emission from cathode electrodes via two mechanisms: sputtering and implantation, with the benefits of implantation reversed by heating the electrode. We have studied five stainless steel electrodes (304L and 316LN) that were polished to approximately 20 nm surface roughness using diamond grit, and evaluated inside a high voltage apparatus to determine the onset of field emission as a function of voltage and field strength. The field emission characteristics of each electrode varied significantly upon the initial application of voltage but improved to nearly the same level after gas conditioning using either helium or krypton, exhibiting less than 10 pA field emission at ?225 kV bias voltage with a 50 mm cathode/anode gap, corresponding to a field strength of ~13 MV/m. Field emission could be reduced with either gas, but there were conditions related to gas choice, voltage and field strength that were more favorable than others.

Bastaninejad, Mahzad [ODU; Elmustafa, Abdelmageed [ODU; Forman, Eric I. [JLAB; Clark, James [JLAB; Covert, Steven R. [JLAB; Grames, Joseph M. [JLAB; Hansknecht, John C. [JLAB; Hernandez-Garcia, Carlos [JLAB; Poelker, Bernard [JLAB; Suleiman, Riad S. [JLAB

2014-10-01T23:59:59.000Z

244

High Performance Fringe-Field Switching with a Negative Dielectric Anisotropy Liquid Crystal  

E-Print Network [OSTI]

Chen, Zhenyue Luo, Fenglin Peng and Shin-Tson Wu College of Optics and Photonics, University of Central in transmittance, viewing angle, cell gap sensitivity, gamma curve, while keeping a comparable operation voltage-dependent transmittance (VT) curves do not overlap well for RGB colors. Thus, three gamma curves are required, which

Wu, Shin-Tson

245

Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants  

DOE Patents [OSTI]

A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

2014-09-09T23:59:59.000Z

246

Reusable fast opening switch  

DOE Patents [OSTI]

A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

Van Devender, J.P.; Emin, D.

1983-12-21T23:59:59.000Z

247

Reusable fast opening switch  

DOE Patents [OSTI]

A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

Van Devender, John P. (Albuquerque, NM); Emin, David (Albuquerque, NM)

1986-01-01T23:59:59.000Z

248

Multilevel Cascade H-bridge Inverter DC Voltage Estimation Through Output Voltage Sensing  

E-Print Network [OSTI]

system as the inverter power supply may vary. For example, interface of solar panels or fuel cell. The output voltage is then processed by a DSP unit that uses the signals that command the switches

Tolbert, Leon M.

249

Reflective HTS switch  

DOE Patents [OSTI]

A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

1994-09-27T23:59:59.000Z

250

Soft-Switching High-Frequency AC-Link Universal Power Converters with Galvanic Isolation  

E-Print Network [OSTI]

) direct drive using wound-field synchronous generator [10]. ...................................................................................................... 6 Figure 6 Dc-dc buck-boost converter: (a) configuration, (b) energizing mode (mode 1), (c...) de-energizing mode (mode 2), (d) voltage and current waveforms ........ 12 Figure 7 An alternative representation of the dc-dc buck-boost converter ...................... 13 Figure 8 Dc-dc ac-link buck-boost converter: configuration, behavior...

Amirabadi, Mahshid

2013-08-07T23:59:59.000Z

251

ANUEADflM-31 Electric Power High-Voltage Transmission Lines:  

Office of Scientific and Technical Information (OSTI)

formulated fluid that is kept under high pressure. This fluid helps to dissipate the power loss heat generated by the conductors. The construction costs in 1991 dollars for...

252

Acceleration Factors for Damp-Heat and HAST with High Voltage...  

Broader source: Energy.gov (indexed) [DOE]

High PID Resistant Cross-Linked Encapsulnt Based on Polyolefin SOLAR ASCE Comparing Accelerated Testing and Outdoor Exposure Agenda for the PV Module Reliability Workshop,...

253

Peak Power Bi-directional Transfer From High Speed Flywheel to Electrical Regulated Bus Voltage System  

E-Print Network [OSTI]

were performed to determine the energy transfer capabilities of a flywheel coupled high speed permanent magnet synchronous machine through the proposed system's energy storage tank. Results are presented

Szabados, Barna

254

Ferroelectric opening switches for large-scale pulsed power drivers.  

SciTech Connect (OSTI)

Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of these unexpected discoveries have lead to new research directions to address challenges.

Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

2009-11-01T23:59:59.000Z

255

Table 1. Design specifications of ultra-high speed PM motor. Supply voltage (V) 12  

E-Print Network [OSTI]

) 1500 Rated torque (Nm) 0.0955 Rated speed (r/min) 150,000 Stator Core Permanent Magnet Shaft Coil Analysis of Ultra-High Speed Permanent-Magnet Motor Masaru Kano, and Toshihiko Noguchi Department@vos.nagaokaut.ac.jp Abstract This paper describes a design of an ultra-high speed (UHS) permanent-magnet (PM) synchronous motor

Fujimoto, Hiroshi

256

Development of a High-Speed Static Switch for Distributed Energy and Microgrid Applications  

SciTech Connect (OSTI)

Distributed energy resources can provide power to local loads in the electric distribution system and benefits such as improved reliability. Microgrids are intentional islands formed at a facility or in an electrical distribution system that contains at least one distributed resource and associated loads. Microgrids that operate both electrical generation and loads in a coordinated manner can offer additional benefits to the customer and local utility. The loads and energy sources can be disconnected from and reconnected to the area or local utility with minimal disruption to the local loads, thereby improving reliability. This paper details the development and testing of a highspeed static switch for distributed energy and microgrid applications.

Kroposki, B.; Pink, C.; Lynch, J.; John, V.; Meor Daniel, S.; Benedict, E.; Vihinen, I.

2007-01-01T23:59:59.000Z

257

Charge-pump voltage converter  

DOE Patents [OSTI]

A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

Brainard, John P. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

2009-11-03T23:59:59.000Z

258

Proceedings of the seventh international conference on high voltage electron microscopy  

SciTech Connect (OSTI)

Eight-four papers are arranged under the following headings: high resolution, techniques and instrumentation, radiation effects, in-situ and phase transformations, minerals and ceramics, and semiconductors and thin films. Twenty-three papers were abstracted separately for the data base; three of the remainder had previously been abstracted. (DLC)

Fisher, R.M.; Gronsky, R.; Westmacott, K.H. (eds.)

1983-01-01T23:59:59.000Z

259

Pulse and Hold Switching Current Readout of Superconducting Quantum Circuits  

E-Print Network [OSTI]

;#12;Abstract Josephson junction qubits are promising candidates for a scalable quantum processor. Such qubits on the switching of a Josephson junction from the zero voltage state to a finite voltage state. The Josephson a switching current detector by analyzing the phase space of a Josephson junction circuit with frequency

Haviland, David

260

Transparent high-data-rate optical transmission through broadband hitless bypass switches for chip-scale optical  

E-Print Network [OSTI]

of silicon photonics are its large bandwidth, low energy consumption, and small footprint components switches, with open eye-diagrams and error-free operation (BERs less than 10-12 ). Both through- and drop-ports was demonstrated [5], with switching from one input to various output ports. Here we demonstrate a hitless switch

Bergman, Keren

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

High Voltage Electrolytes for Li-ion Batteries | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCEDOE Biomass Program2 DOE

262

Epidemiologic study of Holstein dairy cow performance and reproduction near a high-voltage direct - current powerline  

SciTech Connect (OSTI)

The development and operation of a high-voltage direct-current (HVDC) transmission line in rural Minnesota generated public concern over potential adverse effects to nearby residents and their livestock. Electrical parameters near an HVDC line decline rapidly with distance, but effects on ambient space charge have been detected out to 1 mile. To identify potential adverse effects of HVDC line operation on livestock, case-control and cohort study methods were used to examine various indices of Holstein performance in relation to distance from the line and the onset of line operation. It was believed that these indices would reflect changes in physiologic function or overt health effects that might arise from the HVDC environment. High-quality performance data from existing Dairy Herd Improvement Association (DHIA) records were obtained for 97% of qualifying herds located within 10 miles of the line. The large number of animals and years of observation provided high statistical power to detect even small systematic changes in performance. No significant differences in milk production or reproductive capacity were associated with presumed exposure to the HVDC environment. The absence of measurable effects in a large sentinel animal population may have implications for the assessment of human health risks related to HVDC transmission lines.

Martin, F.B.; Bender, A.; Steuernagel, G.; Robinson, R.A.; Revsbech, R.; Sorensen, D.K.; Williamson, N.; Williams, A.

1986-01-01T23:59:59.000Z

263

Ultrahigh density ferroelectric storage and lithography by high order ferroic switching  

DOE Patents [OSTI]

A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

Kalinin, Sergei V. (Knoxville, TN); Baddorf, Arthur P. (Knoxville, TN); Lee, Ho Nyung (Oak Ridge, TN); Shin, Junsoo (Knoxville, TN); Gruverman, Alexei L. (Raleigh, NC); Karapetian, Edgar (Malden, MA); Kachanov, Mark (Arlington, MA)

2007-11-06T23:59:59.000Z

264

From: Laurie Smith To: Congestion Study Comments Subject: High Voltage Transmission Lines  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Electrical Resistivityconnie0:59 PM I34Keryn Newman To:High

265

High Voltage Electrolytes for Li-ion Batteries | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCEDOE Biomass Program2 DOE1

266

High Voltage Electrolytes for Li-ion Batteries | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGH PERFORMANCEDOE Biomass Program2 DOE109

267

Erected mirror optical switch  

DOE Patents [OSTI]

A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

Allen, James J.

2005-06-07T23:59:59.000Z

268

Regenerative switching CMOS system  

DOE Patents [OSTI]

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

Welch, J.D.

1998-06-02T23:59:59.000Z

269

Dual-mode ion switching conducting polymer films as high energy supercapacitor materials  

SciTech Connect (OSTI)

The electropolymerized polypyrrole films formed from micellar solution of anionic surfactants, viz., Dodecylbenzene sulfonate (DBS), showed potential-dependent anion and cation ion switching behavior and the peculiar columnar structure. The formation process and the redox of the polypyrrole was studied with the in situ atomic force microscopy (AFM) and electrochemical quartz crystal microbalance (EQCM) methods. In-situ AFM observation clearly indicated that such a columnar structure started to form around critical charge densities of 60--100 mC cm{sup {minus}2}. The cyclic voltammogram for the PPy doped with DBS{sup {minus}} film showed two redox couples, each of which corresponds to a cation and an anion exchange process. Thus, the film behaves as a dual-mode ion doping/undoping exchanger. As the PPy film was prepared in higher concentration of the surfactant dopant, where the micelles are formed in solution, the resulting film showed a considerably higher (ca. three orders of magnitude) diffusion coefficient compared to ordinary PPy films so far reported. Such an enhanced diffusivity of ions could be attributed to a peculiar structure of the polymer formed. The feasibility of such polypyrrole in use of supercapacitor material was discussed.

Naoi, Katsuhiko; Oura, Yasushi [Tokyo Univ. of Agriculture and Technology, Koganei, Tokyo (Japan). Dept. of Applied Chemistry

1995-12-31T23:59:59.000Z

270

Low Voltage High-SNR Pipeline Data Converters Charles Myers, Jipeng Li, Dong-Young Chang, and Un-Ku Moon  

E-Print Network [OSTI]

Low Voltage High-SNR Pipeline Data Converters Charles Myers, Jipeng Li, Dong-Young Chang, and Un pipeline data converter. This is accomplished with the removal of the S/H input stage and the use of a rail limitations. In pipeline data converters, noise reduction options such as oversampling and noise shaping

Moon, Un-Ku

271

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch  

SciTech Connect (OSTI)

Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2?kV is applied, after an exciting optical pulse with energy of 1??J arrival, the structure with thickness of 650??m reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (?4?kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ?4?kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed.

Hu, Long, E-mail: hulong-1226@126.com [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049 (China); Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China); Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China)

2014-03-07T23:59:59.000Z

272

Numerical simulations of output pulse extraction from a high-power microwave compressor with a plasma switch  

SciTech Connect (OSTI)

Numerical simulations of the process of electromagnetic energy release from a high-power microwave pulse compressor comprising a gas-filled cavity and interference switch were carried out. A microwave plasma discharge in a rectangular waveguide H-plane tee was modeled with the use of the fully electromagnetic particle-in-cell code MAGIC. The gas ionization, plasma evolution, and interaction with RF fields accumulated within the compressor were simulated using different approaches provided by the MAGIC code: particle-in-cell approach accounting for electron-neutral collisions, gas conductivity model based on the concept of mobility, and hybrid modeling. The dependences of the microwave output pulse peak power and waveform on parameters that can be controlled in experiments, such as an external ionization rate, RF field amplitude, and background gas pressure, were investigated.

Shlapakovski, Anatoli; Beilin, Leonid; Bliokh, Yuri; Donskoy, Moshe; Krasik, Yakov E. [Physics Department, Technion, Haifa 32000 (Israel); Hadas, Yoav [Department of Applied Physics, Rafael, PO Box 2250, Haifa 31021 (Israel); Schamiloglu, Edl [Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2014-05-07T23:59:59.000Z

273

A low-voltage zero-crossing-based delta-sigma analog-to-digital converter  

E-Print Network [OSTI]

A zero-crossing-based (ZCB) switched-capacitor technique is presented for operation under low power supply voltages without gate boosting. Voltage ramp generators maintain common-mode level at each integrator output. ...

Guyton, Matthew C. (Matthew Christopher)

2010-01-01T23:59:59.000Z

274

E-Print Network 3.0 - applied voltages ii Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

dc-link voltage error is applied to the fun... --In this paper, a new hybrid active power filter topology is presented. A higher-voltage, low-switching fre... - quency...

275

Design of a Command-Triggered Plasma Opening Switch for Terawatt Applications  

SciTech Connect (OSTI)

Inductive energy storage systems can have high energy density, lending to smaller, less expensive systems. The crucial element of an inductive energy storage system is the opening switch. This switch must conduct current while energy is stored in an inductor, then open quickly to transfer this energy to a load. Plasma can perform this function. The Plasma Opening Switch (POS) has been studied for more than two decades. Success with the conventional plasma opening switch has been limited. A system designed to significantly improve the performance of vacuum opening switches is described in this paper. The gap cleared of plasma is a rough figure-of-merit for vacuum opening switches. Typical opened gaps of 3 mm are reported for conventional switches. The goal for the system described in this paper is more than 3 cm. To achieve this, the command-triggered POS adds an active opening mechanism, which allows complete separation of conduction and opening. This separation is advantageous because of the widely different time scales of conduction and opening. The detrimental process of magnetic field penetration into the plasma during conduction is less important in this switch. The opening mechanism duration is much shorter than the conduction time, so penetration during opening is insignificant. Opening is accomplished with a fast magnetic field that pushes plasma out of the switch region. Plasma must be removed from the switch region to allow high voltage. This paper describes some processes important during conduction and opening, and show calculations on the trigger requirements. The design of the switch is shown. This system is designed to demonstrate both improved performance and nanosecond output jitter at levels greater than one terawatt. An amplification mechanism is described which reduces the trigger energy. Particle-in-cell simulations of the system are also shown.

SAVAGE,MARK E.; MENDEL,C.W.; SEIDEL,DAVID B.

1999-10-29T23:59:59.000Z

276

Electronic logic for enhanced switch reliability  

DOE Patents [OSTI]

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

Cooper, J.A.

1984-01-20T23:59:59.000Z

277

Wind Power Plant Voltage Stability Evaluation: Preprint  

SciTech Connect (OSTI)

Voltage stability refers to the ability of a power system to maintain steady voltages at all buses in the system after being subjected to a disturbance from a given initial operating condition. Voltage stability depends on a power system's ability to maintain and/or restore equilibrium between load demand and supply. Instability that may result occurs in the form of a progressive fall or rise of voltages of some buses. Possible outcomes of voltage instability are the loss of load in an area or tripped transmission lines and other elements by their protective systems, which may lead to cascading outages. The loss of synchronism of some generators may result from these outages or from operating conditions that violate a synchronous generator's field current limit, or in the case of variable speed wind turbine generator, the current limits of power switches. This paper investigates the impact of wind power plants on power system voltage stability by using synchrophasor measurements.

Muljadi, E.; Zhang, Y. C.

2014-09-01T23:59:59.000Z

278

Voltage control in pulsed system by predict-ahead control  

DOE Patents [OSTI]

A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load. 4 figs.

Payne, A.N.; Watson, J.A.; Sampayan, S.E.

1994-09-13T23:59:59.000Z

279

Researchers map atomic movements that trigger voltage fade in...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

map atomic movements that trigger voltage fade in high-energy-density batteries January 22, 2015 Voltage and capacity curves from an LMR-NMC high-energy cathode show voltage fade...

280

High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch.  

SciTech Connect (OSTI)

Two different Sandia MEMS devices have been tested in a high-g environment to determine their performance and survivability. The first test was performed using a drop-table to produce a peak acceleration load of 1792 g's over a period of 1.5 ms. For the second test the MEMS devices were assembled in a gun-fired penetrator and shot into a cement target at the Army Waterways Experiment Station in Vicksburg Mississippi. This test resulted in a peak acceleration of 7191 g's for a duration of 5.5 ms. The MEMS devices were instrumented using the MEMS Diagnostic Extraction System (MDES), which is capable of driving the devices and recording the device output data during the high-g event, providing in-flight data to assess the device performance. A total of six devices were monitored during the experiments, four mechanical non-volatile memory devices (MNVM) and two Silicon Reentry Switches (SiRES). All six devices functioned properly before, during, and after each high-g test without a single failure. This is the first known test under flight conditions of an active, powered MEMS device at Sandia.

Baker, Michael Sean; Pohl, Kenneth Roy

2005-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Effects of High-Altitude Electromagnetic Pulse (HEMP) on the Northern Telecom Inc. DMS-100 (trademark) switch. Volume 2. Test program. Final report  

SciTech Connect (OSTI)

This report is part of a three volume set that presents the results of simulated High-Altitude Electromagnetic Pulse (HEMP) testing of a DMS-100 Switching System. This volume is a detailed description of the test procedures, test results, and the mitigation alternatives evaluated. This volume also presents a discussion of the conclusion and recommendations of the program.

Not Available

1988-09-01T23:59:59.000Z

282

A Design-Oriented Framework to Determine the Parasitic Parameters of High Frequency Magnetics in Switching Power Supplies using Finite Element Analysis Techniques  

E-Print Network [OSTI]

A DESIGN-ORIENTED FRAMEWORK TO DETERMINE THE PARASITIC PARAMETERS OF HIGH FREQUENCY MAGNETICS IN SWITCING POWER SUPPLIES USING FINITE ELEMENT ANALYSIS TECHNIQUES A Thesis by MOHAMMAD BAGHER SHADMAND Submitted to the Office... to Determine the Parasitic Parameters of High Frequency Magnetics in Switching Power Supplies using Finite Element Analysis Techniques Copyright 2012 Mohammad Bagher Shadmand A DESIGN-ORIENTED FRAMEWORK TO DETERMINE THE PARASITIC PARAMETERS OF HIGH...

Shadmand, Mohammad

2012-07-16T23:59:59.000Z

283

Low Beam Voltage, 10 MW, L-Band Cluster Klystron  

SciTech Connect (OSTI)

Conceptual design of a multi-beam klystron (MBK) for possible ILC and Project X applications is presented. The chief distinction between this MBK design and existing 10-MW MBK's is the low operating voltage of 60 kV. There are at least four compelling reasons that justify development at this time of a low-voltage MBK, namely (1) no pulse transformer; (2) no oil tank for high-voltage components and for the tube socket; (3) no high-voltage cables; and (4) modulator would be a compact 60-kV IGBT switching circuit. The proposed klystron consists of four clusters containing six beams each. The tube has common input and output cavities for all 24 beams, and individual gain cavities for each cluster. A closely related optional configuration, also for a 10 MW tube, would involve four totally independent cavity clusters with four independent input cavities and four 2.5 MW output ports, all within a common magnetic circuit. This option has appeal because the output waveguides would not require a controlled atmosphere, and because it would be easier to achieve phase and amplitude stability as required in individual SC accelerator cavities.

Teryaev, V.; /Novosibirsk, IYF; Yakovlev, V.P.; /Fermilab; Kazakov, S.; /KEK, Tsukuba; Hirshfield, J.L.; /Yale U. /Omega-P, New Haven

2009-05-01T23:59:59.000Z

284

High Gain Transformerless DC-DC Converters for Renewable Energy Sources  

E-Print Network [OSTI]

mode DCM Discontinuous conduction mode EAR Equivalent averaged resistance ESR Equivalent series resistance FC Fuel cell fS Switching frequency HVDC High voltage direct current ix, vx Instantaneous current, voltage of node x Ix, Vx Average....1. Introduction ................................................................................... 59 5.2. Design example and simulation .................................................... 62 5.3. Evaluation of multiple module approach in HVDC converters...

Denniston, Nicholas Aaron

2011-08-08T23:59:59.000Z

285

3430 IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY, VOL. 61, NO. 8, OCTOBER 2012 Experimental Validation of High-Voltage-Ratio  

E-Print Network [OSTI]

-voltage current-source like device that produces electricity and heat directly from input hydrogen and oxygen carbon dioxide emissions under the assumption that the hydrogen can be produced from renewable-energy sources such as photovoltaic and wind energy or as a subprod- uct of currently wasted energy of large

Simões, Marcelo Godoy

286

A PC-PCL-based control system for the high-voltage pulsed-power operation of the Intense Diagnostic Neutral Beam (IDNB) Experiment  

SciTech Connect (OSTI)

A stand-alone, semiautomated control system for the high-voltage pulsed-power energy sources on the Intense Diagnostic Neutral Beam Experiment at Los Alamos National Laboratory using personal computer (PC) and programmable logic controller (PLC) technology has been developed and implemented. The control system, consisting of a PC with the graphic operator interface, the network connecting the PC to the PLC, the PLC, the PLC I/O modules, fiber-optic interfaces and software, is described.

Gribble, R.

1993-06-01T23:59:59.000Z

287

Voltage balanced multilevel voltage source converter system  

DOE Patents [OSTI]

A voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means.

Peng, Fang Zheng (Oak Ridge, TN); Lai, Jih-Sheng (Knoxville, TN)

1997-01-01T23:59:59.000Z

288

Voltage balanced multilevel voltage source converter system  

DOE Patents [OSTI]

Disclosed is a voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means. 15 figs.

Peng, F.Z.; Lai, J.S.

1997-07-01T23:59:59.000Z

289

Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches  

DOE Patents [OSTI]

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

Cooper, James A. (Albuquerque, NM)

1986-01-01T23:59:59.000Z

290

A Low Latency Optical Switch for High Performance Computing with Minimized Processor Energy Load  

E-Print Network [OSTI]

ion, CMP power densi ty and thermal management issues are ser iously l imit ing processor per formance [2]. High per formance server chips require >1Tb/s of off-chip bandwidth including Ethernet , PCI , main memory and coherence l inks which... with the 120W total processor power envelope. By compar ison, the processor chip power dissipat ion of our archi tecture (at 30% load) is 0.5 mW/(Gb/s), consuming only 0.23W for the same coherence bandwidth. Such compar isons are di fficul...

Liu, Shiyun; Cheng, Qixiang; Madarbux, Muhammad Ridwan; Wonfor, Adrian; Penty, Richard V.; White, Ian H.; Watts, Philip M.

2015-03-01T23:59:59.000Z

291

Hybrid high direct current circuit interrupter  

DOE Patents [OSTI]

A device and a method are disclosed for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens. 7 figs.

Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

1998-08-11T23:59:59.000Z

292

Pulsed CO{sub 2} laser with an X-ray preioniser based on a high-voltage low-pressure glow discharge  

SciTech Connect (OSTI)

An X-ray preioniser with an electron beam energy density of 0.1 J cm{sup -2} based on a high-voltage (20 - 40 kV) low-pressure glow discharge is developed for repetitively pulsed gas lasers. The electron concentration in the CO{sub 2} - N{sub 2} - He mixture as a function of the voltage across the preioniser is calculated for titanium and other foils. The preioniser can be operated both in a single-pulse regime and at pulse repetition rates ranging up to hundreds of Hertz. A specific energy yield of 51 J L{sup -1} is achieved in the X-ray preionised pulsed CO{sub 2} atmospheric-pressure laser. This preioniser was shown to be efficient for other active media (CO and excimer lasers), which opens up new opportunities for the development of repetitively pulsed gas lasers. (lasers)

Oreshkin, V F; Seregin, Aleksandr M; Sinaiskii, V V; Shchetinkina, T A ['Astrofizika' Research and Production Association (Russian Federation); Sorokin, A R [Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

2003-12-31T23:59:59.000Z

293

Microfabricated triggered vacuum switch  

DOE Patents [OSTI]

A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

Roesler, Alexander W. (Tijeras, NM); Schare, Joshua M. (Albuquerque, NM); Bunch, Kyle (Albuquerque, NM)

2010-05-11T23:59:59.000Z

294

> REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 Abstract--In high current, high voltage, high temperature  

E-Print Network [OSTI]

and high current applications, such as HVDC transmission [1] or pulsed power application [2], a thyristor

Paris-Sud XI, Université de

295

Total compensation of line-side switching harmonics in converter-fed ac locomotives  

SciTech Connect (OSTI)

PWM controlled line-side converters of modern ac traction locomotives inject harmonic currents into the feeding overhead line. This causes problems of electromagnetic interference. Passive or active filters are usually provided for a partial reduction of the line harmonics. A novel and superior approach employs a switched electronic compensator. It generates an exact replica of the harmonic current, feeding it to the high-voltage transformer to produce a harmonic counter MMF. The transformer main flux is then forced to be sinusoidal, and so is the induced voltage in the primary. The line current, being low-pass filtered by the transformer leakage inductance, assumes a pure sinusoidal waveform. The compensator operates in the low switching frequency range of the main power converters. Its installed power is only 1% of the traction power. Operation, control, and design considerations are described. Results from laboratory tests at full power level are presented.

Krah, J.O.; Holtz, J. [Univ. of Wuppertal (Germany)] [Univ. of Wuppertal (Germany)

1995-11-01T23:59:59.000Z

296

Novel Hybrid Materials with High Stability for Electrically Switched Ion Exchange: Carbon Nanotubes/Polyaniline/Nickel Hexacyanoferrate Nanocomposites  

SciTech Connect (OSTI)

A novel and stable carbon nanotubes /polyaniline /nickel hexacyanoferrates composite film has been synthesized with electrodeposition method, and the possibility for removing cesium through an electrically switched ion exchange has been evaluated in a mixture containing NaNO3 and CsNO3.

Lin, Yuehe; Cui, Xiaoli

2005-04-21T23:59:59.000Z

297

Differentially-charged and sequentially-switched square-wave pulse forming network  

DOE Patents [OSTI]

A pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form.

North, George G. [Stockton, CA; Vogilin, George E. [Livermore, CA

1980-04-01T23:59:59.000Z

298

Differentially-charged and sequentially-switched square-wave pulse forming network  

DOE Patents [OSTI]

Disclosed is a pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form. 5 figs.

North, G.G.; Vogilin, G.E.

1980-04-01T23:59:59.000Z

299

Efficient tunable switch from slow light to fast light in quantum opto-electromechanical system  

E-Print Network [OSTI]

The control of slow and fast light propagation, in the probe transmission in a single experiment, is a challenging task. This type of control can only be achieved through highly nonlinear interactions and additional interfering pathway(s), which is therefore seldom reported. Here, we devise a scheme in which slow light, and a tunable switch from slow light to fast light can be achieved in the probe transmission based on a hybrid setup, which is composed of an optical cavity with two charged nano mechanical resonators (MRs). The two MRs are electrostatically coupled via tunable Coulomb coupling strength ($g_{c}$) making a quantum opto-electromechanical system (QOEMS). The parameter $g_{c}$ that couples the two MRs can be switched on and off by controlling the bias voltages on the MRs, and acts as a tunable switch that allows the propagation of transmitted probe field as slow light ($g_{c} \

M. Javed Akram; Khalid Naseer; Farhan Saif

2015-03-05T23:59:59.000Z

300

Advanced Soft Switching Inverter for Reducing Switching and Power...  

Broader source: Energy.gov (indexed) [DOE]

lai.pdf More Documents & Publications Advanced Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power...

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


301

Physical simulation study of dynamic voltage instability  

SciTech Connect (OSTI)

This paper presents a physical simulation of the dynamic behavior of voltage instability in an interconnected multimachine environment. The dynamic evolving process leading to eventual voltage collapse, the scenario of the progressive reactive support reduction resulting from the MXL protection relays, the OLTC operation, and the effect of switched-in capacitor banks are examined using physical facilities in the laboratory. The physical simulation results are also compared with digital simulation results. This physical investigation provides a reliable foundation for the effective development of assessment approaches and countermeasures.

Tso, S.K.; Zhu, T.X. [Univ. of Hong Kong (Hong Kong); Zeng, Q.Y. [Electric Power Research Inst., Beijing (China); Lo, K.L. [Univ. of Strathclyde, Glasgow (United Kingdom). Dept. of Electrical and Electrical Engineering

1995-12-31T23:59:59.000Z

302

Fundamental science investigations to develop a 6-MV laser triggered gas switch for ZR: first annual report.  

SciTech Connect (OSTI)

In October 2005, an intensive three-year Laser Triggered Gas Switch (LTGS) development program was initiated to investigate and solve observed performance and reliability issues with the LTGS for ZR. The approach taken has been one of mission-focused research: to revisit and reassess the design, to establish a fundamental understanding of LTGS operation and failure modes, and to test evolving operational hypotheses. This effort is aimed toward deploying an initial switch for ZR in 2007, on supporting rolling upgrades to ZR as the technology can be developed, and to prepare with scientific understanding for the even higher voltage switches anticipated needed for future high-yield accelerators. The ZR LTGS was identified as a potential area of concern quite early, but since initial assessments performed on a simplified Switch Test Bed (STB) at 5 MV showed 300-shot lifetimes on multiple switch builds, this component was judged acceptable. When the Z{sub 20} engineering module was brought online in October 2003 frequent flashovers of the plastic switch envelope were observed at the increased stresses required to compensate for the programmatically increased ZR load inductance. As of October 2006, there have been 1423 Z{sub 20} shots assessing a variety of LTGS designs. Numerous incremental and fundamental switch design modifications have been investigated. As we continue to investigate the LTGS, the basic science of plastic surface tracking, laser triggering, cascade breakdown, and optics degradation remain high-priority mission-focused research topics. Significant progress has been made and, while the switch does not yet achieve design requirements, we are on the path to develop successively better switches for rolling upgrade improvements to ZR. This report summarizes the work performed in FY 2006 by the large team. A high-level summary is followed by detailed individual topical reports.

Warne, Larry Kevin; Van Den Avyle, James A.; Lehr, Jane Marie; Rose, David (Voss Scientific, Albuquerque, NM); Krompholz, Hermann G. (Texas Tech University, Lubbock, TX); Vela, Russell (Texas Tech University, Lubbock, TX); Jorgenson, Roy Eberhardt; Timoshkin, Igor (University of Strathclyde, Glasgow, Scotland); Woodworth, Joseph Ray; Prestwich, Kenneth Randel (Voss Scientific, Albuquerque, NM); Krile, John (Texas Tech University, Lubbock, TX); Given, Martin (University of Strathclyde, Glasgow, Scotland); McKee, G. Randall; Rosenthal, Stephen Edgar; Struve, Kenneth William; Welch, Dale Robert (Voss Scientific, Albuquerque, NM); Benwell, Andrew L. (University of Missouri-Columbia, Columbia, Missouri); Kovaleski, Scott (University of Missouri-Columbia, Columbia, Missouri); LeChien, Keith, R.; Johnson, David (Titan Pulse Sciences Division); Fouracre, R.A. (University of Strathclyde, Glasgow, Scotland); Yeckel, Chris (University of Missouri-Columbia, Columbia, Missouri); Wakeland, Peter Eric (Ktech Corporation, Albuquerque, NM); Miller, A. R. (Titan Pulse Sciences Division); Hodge, Keith Conquest (Ktech Corporation, Albuquerque, NM); Pasik, Michael Francis; Savage, Mark Edward; Maenchen, John Eric; Curry, Randy D. (University of Missouri-Columbia, Columbia, Missouri); Feltz, Greg (Ktech Corporation, Albuquerque, NM); Bliss, David Emery; MacGregor, Scott (University of Strathclyde, Glasgow, Scotland); Corley, J. P. (Ktech Corporation, Albuquerque, NM); Anaya, Victor (Ktech Corporation, Albuquerque, NM); Wallace, Zachariah (Ktech Corporation, Albuquerque, NM); Thoma, Carsten (Voss Scientific, Albuquerque, NM); Neuber, Andreas. (Texas Tech University, Lubbock, TX)

2007-03-01T23:59:59.000Z

303

Switch for serial or parallel communication networks  

DOE Patents [OSTI]

A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination. 9 figs.

Crosette, D.B.

1994-07-19T23:59:59.000Z

304

Laser triggering of water switches in terrawatt-class pulse power accelerators.  

SciTech Connect (OSTI)

Focused Beams from high-power lasers have been used to command trigger gas switches in pulse power accelerators for more than two decades. This Laboratory-Directed Research and Development project was aimed at determining whether high power lasers could also command trigger water switches on high-power accelerators. In initial work, we determined that focused light from three harmonics of a small pulsed Nd:YAG laser at 1064 nm, 532 nm, and 355 nm could be used to form breakdown arcs in water, with the lowest breakdown thresholds of 110 J/cm{sup 2} or 14 GW/cm{sup 2} at 532 nm in the green. In laboratory-scale laser triggering experiments with a 170-kV pulse-charged water switch with a 3-mm anode-cathode gap, we demonstrated that {approx}90 mJ of green laser energy could trigger the gap with a 1-{sigma} jitter of less than 2ns, a factor of 10 improvement over the jitter of the switch in its self breaking mode. In the laboratory-scale experiments we developed optical techniques utilizing polarization rotation of a probe laser beam to measure current in switch channels and electric field enhancements near streamer heads. In the final year of the project, we constructed a pulse-power facility to allow us to test laser triggering of water switches from 0.6- MV to 2.0 MV. Triggering experiments on this facility using an axicon lens for focusing the laser and a switch with a 740 kV self-break voltage produced consistent laser triggering with a {+-} 16-ns 1-{sigma} jitter, a significant improvement over the {+-} 24-ns jitter in the self-breaking mode.

Woodworth, Joseph Ray; Johnson, David Lee (Titan Pulse Sciences, San Leandro, CA); Wilkins, Frank (Bechtel Nevada, Las Vegas, NV); Van De Valde, David (EG& G Technical Services, Albuquerque, NM); Sarkisov, Gennady Sergeevich (Ktech Corporation, Albuquerque, NM); Zameroski, Nathan D.; Starbird, Robert L. (Bechtel Nevada, Las Vegas, NV)

2005-12-01T23:59:59.000Z

305

Ultrafast gas switching experiments  

SciTech Connect (OSTI)

We describe recent experiments which studied the physics of ultrafast gas breakdown under the extreme overvoltages which occur when a high pressure gas switch is pulse charged to hundreds of kV in 1 ns or less. The highly overvolted peaking gaps produce powerful electromagnetic pulses with risetimes < 100 ps which can be used for ultrawideband radar systems, particle accelerators, laser drivers, bioelectromagnetic studies, electromagnetic effects testing, and for basic studies of gas breakdown physics. We have produced and accurately measured pulses with 50 to 100 ps risetimes to peak levels of 75 to 160 kV at pulse repetition frequencies (PRF) to I kHz. A unique gas switch was developed to hold off hundreds of kV with parasitic inductance less than I nH. An advanced diagnostic system using Fourier compensation was developed to measure single-shot risetimes below 35 ps. The complete apparatus is described and wave forms are presented. The measured data are compared with a theoretical model which predicts key features including dependence on gas species and pressure. We have applied this technology to practical systems driving ultrawideband radiating antennas and bounded wave simulators. For example, we have developed a thyristor/pulse transformer based system using a highly overvolted cable switch. This pulser driving a Sandia- designed TEM cell, provides an ultra wideband impulse with < 200 ps risetime to the test object at a PRF > 1 kHz at > 100 kV/m E field.

Frost, C.A.; Martin, T.H.; Patterson, P.E.; Rinehart, L.F.; Rohwein, G.J.; Roose, L.D.; Aurand, J.F.; Buttram, M.T.

1996-11-01T23:59:59.000Z

306

Strategies for Voltage Control and Transient Stability Assessment  

SciTech Connect (OSTI)

As wind generation grows, its influence on power system performance will becoming increasingly noticeable. Wind generation di#11;ffers from traditional forms of generation in numerous ways though, motivating the need to reconsider the usual approaches to power system assessment and performance enhancement. The project has investigated the impact of wind generation on transient stability and voltage control, identifying and addressing issues at three distinct levels of the power system: 1) at the device level, the physical characteristics of wind turbine generators (WTGs) are quite unlike those of synchronous machines, 2) at the wind-farm level, the provision of reactive support is achieved through coordination of numerous dissimilar devices, rather than straightforward generator control, and 3) from a systems perspective, the location of wind-farms on the sub-transmission network, coupled with the variability inherent in their power output, can cause complex voltage control issues. The project has sought to develop a thorough understanding of the dynamic behaviour of type-3 WTGs, and in particular the WECC generic model. The behaviour of such models is governed by interactions between the continuous dynamics of state variables and discrete events associated with limits. It was shown that these interactions can be quite complex, and may lead to switching deadlock that prevents continuation of the trajectory. Switching hysteresis was proposed for eliminating deadlock situations. Various type-3 WTG models include control blocks that duplicate integrators. It was shown that this leads to non-uniqueness in the conditions governing steady-state, and may result in pre- and post-disturbance equilibria not coinciding. It also gives rise to a zero eigenvalue in the linearized WTG model. In order to eliminate the anomalous behaviour revealed through this investigation, WECC has now released a new generic model for type-3 WTGs. Wind-farms typically incorporate a variety of voltage control equipment including tapchanging transformers, switched capacitors, SVCs, STATCOMs and the WTGs themselves. The project has considered the coordinated control of this equipment, and has addressed a range of issues that arise in wind-farm operation. The #12;first concerns the ability of WTGs to meet reactive power requirements when voltage saturation in the collector network restricts the reactive power availability of individual generators. Secondly, dynamic interactions between voltage regulating devices have been investigated. It was found that under certain realistic conditions, tap-changing transformers may exhibit instability. In order to meet cost, maintenance, fault tolerance and other requirements, it is desirable for voltage control equipment to be treated as an integrated system rather than as independent devices. The resulting high-level scheduling of wind-farm reactive support has been investigated. In addressing this control problem, several forms of future information were considered, including exact future knowledge and stochastic predictions. Deterministic and Stochastic Dynamic Programming techniques were used in the development of control algorithms. The results demonstrated that while exact future knowledge is very useful, simple prediction methods yield little bene#12;fit. The integration of inherently variable wind generation into weak grids, particularly subtransmission networks that are characterized by low X=R ratios, aff#11;ects bus voltages, regulating devices and line flows. The meshed structure of these networks adds to the complexity, especially when wind generation is distributed across multiple nodes. A range of techniques have been considered for analyzing the impact of wind variability on weak grids. Sensitivity analysis, based on the power-flow Jacobian, was used to highlight sections of a system that are most severely a#11;ffected by wind-power variations. A continuation power flow was used to determine parameter changes that reduce the impact of wind-power variability. It was also used to explore interactions betw

Hiskens, Ian A.

2013-09-25T23:59:59.000Z

307

Section IV.D.3 for DOE 2013 Annual Report: Novel Phosphazene-based Compounds to Enhance Safety and Stability of Cell Chemistries for High Voltage Applications (INL)  

SciTech Connect (OSTI)

Electrolytes play a central role in performance and aging in most electrochemical systems. As automotive and grid applications place a higher reliance on electrochemical stored energy, it becomes more urgent to have electrolyte components that enable optimal battery performance while promoting battery safety and longevity. Safety remains a foremost concern for widespread utilization of Li-ion technology in electric-drive vehicles, especially as the focus turns to higher voltage systems (5V). This work capitalizes on the long established INL expertise regarding phosphazene chemistry, aimed at battery-viable compounds for electrolytes and electrodes that are highly tolerant to abusive conditions. This report showcases our 2013 work for the DOE applied battery research (ABR) program, wherein testing results are summarized for INL electrolytes and alternative anode materials.

Kevin L. Gering; Mason K. Harrup; Eric J. Dufek; Sergiy V. Sazhin; Harry W. Rollins; David K. Jamison; Fred F. Stewart; John Burba

2013-09-01T23:59:59.000Z

308

Miniaturized, low-voltage power converters with fast dynamic response  

E-Print Network [OSTI]

This thesis introduces a two-stage architecture that combines the strengths of switched capacitor (SC) techniques (small size, light-load performance) with the high efficiency and regulation capability of switch-mode power ...

Giuliano, David (David Michael)

2013-01-01T23:59:59.000Z

309

A magnetically switched kicker for proton extraction  

SciTech Connect (OSTI)

The application of magnetic current amplification and switching techniques to the generation of precise high current pulses for switching magnets is described. The square loop characteristic of Metglas tape wound cores at high excitation levels provides excellent switching characteristics for microsecond pulses. The rugged and passive nature of this type pulser makes it possible to locate the final stages of amplification at the load for maximum efficiency. 12 refs., 8 figs.

Dinkel, J.; Biggs, J.

1989-03-01T23:59:59.000Z

310

Double row loop-coil configuration for high-speed electrodynamic maglev suspension, guidance, propulsion and guideway directional switching  

DOE Patents [OSTI]

A stabilization and propulsion system are disclosed comprising a series of loop-coils arranged in parallel rows wherein two rows combine to form one of two magnetic rails. Levitation and lateral stability are provided when the induced field in the magnetic rails interacts with the superconducting magnets mounted on the magnetic levitation vehicle. The loop-coils forming the magnetic rails have specified dimensions and a specified number of turns and by constructing differently these specifications, for one rail with respect to the other, the angle of tilt of the vehicle can be controlled during directional switching. Propulsion is provided by the interaction of a traveling magnetic wave associated with the coils forming the rails and the superconducting magnets on the vehicle. 12 figs.

He, J.; Rote, D.M.

1996-05-21T23:59:59.000Z

311

Power Supply Rejection Improvement Techniques In Low Drop-Out Voltage Regulators  

E-Print Network [OSTI]

because of packaging and cooling requirements [1,2]. These aspects lead to breakthrough of power management IC design whose basic functionality is improving the systems power efficiency. A full on-chip power management unit (PMU) is highly desirable... components such as inductors and capacitors has to be reduced in order to reduce (BOM). There are two important blocks in a PMU namely DC-DC switched mode power supplies (SMPS) and Low Drop Out (LDO) voltage regulators. Both of these provide the basic...

Ganta, Saikrishna

2011-10-21T23:59:59.000Z

312

Ignition distributor voltage generator  

SciTech Connect (OSTI)

This patent describes a voltage pulse generator and ignition distributor comprising, a base, a shaft rotatably supported by the base, a distributor cap supported by the base having a center electrode and circumferentially spaced outer electrodes. The pulse generator and ignition distribution also include a first rotor driven by the shaft formed of electrical insulating material having electrically conductive means connected to the center terminal and a portion that rotates past the outer electrodes. The portion of the electrically conductive means that rotates past the outer electrodes is spaced from the outer electrodes to form a gap therebetween. A voltage pulse generator comprises a second rotor driven by the shaft, at least one permanent magnet and an annular pickup coil supported by the base. The pickup coil has inner turns and outer turns, the beginning turn of the inner turns connected to a first lead and the last turn of the outer turns connected to a second lead, the outer turns enclosing the inner turns. The pickup coil also has a circuit connected directly between the second lead and ground which is operative to provide a direct conductive path to ground for high frequency energy capacitively coupled to the outer turns from the gap discharge between the electrically conductive means of the first rotor and an outer electrode, the outer turns forming a grounded shield for the inner turns.

Boyer, J.A.

1986-11-04T23:59:59.000Z

313

Wide-range voltage modulation  

SciTech Connect (OSTI)

The Superconducting Super Collider`s Medium Energy Booster Abort (MEBA) kicker modulator will supply a current pulse to the abort magnets which deflect the proton beam from the MEB ring into a designated beam stop. The abort kicker will be used extensively during testing of the Low Energy Booster (LEB) and the MEB rings. When the Collider is in full operation, the MEBA kicker modulator will abort the MEB beam in the event of a malfunction during the filling process. The modulator must generate a 14-{mu}s wide pulse with a rise time of less than 1 {mu}s, including the delay and jitter times. It must also be able to deliver a current pulse to the magnet proportional to the beam energy at any time during ramp-up of the accelerator. Tracking the beam energy, which increases from 12 GeV at injection to 200 GeV at extraction, requires the modulator to operate over a wide range of voltages (4 kV to 80 kV). A vacuum spark gap and a thyratron have been chosen for test and evaluation as candidate switches for the abort modulator. Modulator design, switching time delay, jitter and pre-fire data are presented.

Rust, K.R.; Wilson, J.M.

1992-06-01T23:59:59.000Z

314

Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages  

DOE Patents [OSTI]

A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

Su, Gui-Jia [Knoxville, TN

2005-11-29T23:59:59.000Z

315

PAPER ACCEPTED TO IEEE TRANSACTIONS ON POWER SYSTEMS, Nov. 2008 1 Reactive Power and Voltage Control in Distribution  

E-Print Network [OSTI]

PAPER ACCEPTED TO IEEE TRANSACTIONS ON POWER SYSTEMS, Nov. 2008 1 Reactive Power and Voltage) problem associated with reactive power and voltage control in distribution systems to minimize daily--Distribution systems, reactive power control, voltage control, optimal switching operations, mixed integer nonlinear

Cañizares, Claudio A.

316

A 4000-A HVDC (high-voltage direct-current) circuit breaker with fast fault-clearing capability: Final report  

SciTech Connect (OSTI)

This project is a follow-up of the first development of a 500 kV HVDC airblast circuit breaker (EPRI project 1507-3). The objective was to increase the current interrupting capability from 2200 A to 4000 A and shorten its fault clearing time. A high current 500 kV HVDC circuit breaker has been built using the passive commutation circuit. The breaker is modular in construction and can be designed for a wide variety of system conditions. More than 400 current interruptions were carried out successfully. Tests have shown that this circuit breaker is capable of interrupting more than 4000 A dc. Practical breakers with current interrupting capability of even 5500 A dc could be built. The circuit breaker operation and the fault-clearing process can be materially speeded up if the trip signal is given as soon as the fault is detected and without waiting for the current levels to come down in response to converter control action. The new dc breakers are shown to be capable of withstanding these transient arc currents of 8000 A without affecting its ability to interrupt the direct current that follows the transient. This transient current withstand capability is greater than is likely to occur during dc faults. The fault clearing time of this HVDC circuit breaker is comparable to the fault clearing time of conventional ac breakers for ac faults. The developed HVDC circuit breaker is now commercially available and can be supplied for use in HVDC systems. Its use in such systems is expected to provide flexibility in system design and contribute to system stability. 38 refs., 52 figs., 9 tabs.

Not Available

1988-04-01T23:59:59.000Z

317

E-Print Network 3.0 - activation switch macs-index Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Optical Summary: quadratically with switching node degree when active optoelectronic devices are used as switching elements 2... is presented. Because of the high cost of...

318

Latching micro optical switch  

DOE Patents [OSTI]

An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

Garcia, Ernest J; Polosky, Marc A

2013-05-21T23:59:59.000Z

319

Voltage Control Technical Conference  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Intro Voltage Control Conference - BPA Active Power Control in Wind Parks - Siemens Interconnection Criteria for Frequency Response Requirements - NERC Model Validation...

320

Investigation of the spatiotemporal characteristics of the electric field in the Ne-H{sub 2} plasma of a beam-type high-voltage pulsed discharge  

SciTech Connect (OSTI)

In the present work, the spatiotemporal dynamics of the electric field E(x, t) of plasma produced by a beam-type high-voltage pulsed discharge is investigated. The electric field strength E(x, t) in an accelerating gap and in a plasma flare was determined from the measured Stark splitting of the H{sub ?} hydrogen line. The obtained dependence E(x, t) was used to calculate the electron distribution function and the spectral line intensities in the accelerating gap and in the plasma flare by the method of statistical modeling. The calculated population of He atomic states excited by electron impact and their comparison with the measured spectral line intensities I(?, x, t) demonstrate that a reverse electric field retarding the electron motion and leading to electron beam degradation must be present in the plasma flare near the grid. Measurement of the field strength from the Stark splitting of the H{sub ?} line demonstrates that it can reach considerable values.

Demkin, V. P.; Mel'nichuk, S. V.; Borisov, A. V.; Bardin, S. S. [National Research Tomsk State University, 36, Lenin Ave., 634050 Tomsk (Russian Federation)] [National Research Tomsk State University, 36, Lenin Ave., 634050 Tomsk (Russian Federation)

2013-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2013-12-15T23:59:59.000Z

322

Modulated voltage metastable ionization detector  

SciTech Connect (OSTI)

Metastable ionization detectors used for chromatographic analysis usually employa fixed high voltage for the ionization potential. For this reason, the operating range is limited to about three orders of magnitude. By use of the technique disclosed in the instant invention, operating ranges of about nine orders of magnitude are obtained. The output current from a metastable ionization detector (MID) is applied to a modulation voltage circuit. An adjustment is made to balance out the background current, and an output current, above background, is applied to an input of a strip chart recorder. For low level concentrations, i.e., low detected output current, the ionization potential will be at a maximum and the metastable ionization detector will operate at its most sensitive level. When the detected current from the metastable ionization detector increases above a predetermined threshold level, a voltage control circuit is activated which turns on a high voltage transistor which acts to reduce the ionization potential. The ionization potential applied to the metastable ionization detector is then varied so as to maintain the detected signal level constant. The variation in ionization potential is now related to the concentration fo the constituent and a representative amplitude is applied to another input of said strip chart recorder.

Carle, G. C.; Humphry, D. E.; Kojiro, D. R.

1985-08-27T23:59:59.000Z

323

Electronically commutated serial-parallel switching for motor windings  

DOE Patents [OSTI]

A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

Hsu, John S. (Oak Ridge, TN)

2012-03-27T23:59:59.000Z

324

Dynamic photorefractivity guided by single-pulse voltage  

SciTech Connect (OSTI)

The dynamic photorefractivity in a cell with photoconducting orienting layers, filled with a nematic liquid crystal (LC) 6CHBT and a mixture of anthraquinone dyes AD1 and AD2, has been investigated. The single-pulse mode, in which the polarity and amplitude of a dc electric field applied to an LC cell are switched for a fixed time interval, has been used. The scheme of dynamic self-diffraction of low-power laser beams was used in the experiment. The dependences of the width and intensity of diffraction pulses on the bias and switching voltages have been investigated. It is established that the width and intensity of the diffraction pulse arising after initial voltage recovery depends also on the switching pulse width. At the optimal width of the control pulse, the diffraction efficiency increases by two orders of magnitude.

Agashkov, A. V., E-mail: agashkov@inel.bas.net.by; Kovalev, A. A. [National Academy of Sciences of Belarus, Institute of Electronics (Belarus); Parka, J. [Military University of Technology, Institute of Applied Physics (Poland)

2008-03-15T23:59:59.000Z

325

PBC: A Partially Buffered Crossbar Packet Switch  

E-Print Network [OSTI]

fabric is widely used as the interconnect of high-performance packet switches due to its low cost-performance packet switches because of its low cost and scalability. As a result, the vast majority and scalability. There are two main variants of the crossbar fabric: unbuffered and internally buffered. On one

Kuzmanov, Georgi

326

Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches  

SciTech Connect (OSTI)

A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ?40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li [Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P.O. Box 919-108, Mianyang 621900 (China)

2014-09-15T23:59:59.000Z

327

275 C Downhole Switched-Mode Power Supply  

SciTech Connect (OSTI)

A vee-square (V2) control based controller IC is developed for a switch mode power supply capable of operating at extreme temperature/harsh environment conditions. A buck type regulator with silicon carbide power junction field effect transistors (JFET) as power devices is used to analyze the performance of controller. Special emphases are made on the analog sub-blocks--voltage reference, operational transconductance amplifier and comparator as individual building blocks. Transformer coupled gate drives and high temperature operable magnetic cores and capacitors are identified and tested for use in the design. Conventional ceramic chip packaging of ICs combined with lead carrier type mounting of passive filter components is introduced for hybrid packaging of the complete product. The developed SMPS is anticipated to support the operation of down-hole microcontrollers and other electronics devices that require low/medium power filtered dc inputs over an operating temperature of 275 C.

Chris Hutchens; Vijay Madhuravasal

2008-08-31T23:59:59.000Z

328

Voltage verification unit  

DOE Patents [OSTI]

A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

Martin, Edward J. (Virginia Beach, VA)

2008-01-15T23:59:59.000Z

329

Vehicle Technologies Office Merit Review 2014: High Energy Density Li-ion Cells for EV’s Based on Novel, High Voltage Cathode Material Systems  

Broader source: Energy.gov [DOE]

Presentation given by Farasis Energy, Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high energy density Li...

330

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.  

E-Print Network [OSTI]

as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40

Ravikumar, B.

331

Analysis and design of an electronic voltage ratchet  

E-Print Network [OSTI]

and decay. Impulse voltages are produced through the discharging of 0, capacitor into a shaping network consisting of resistors and a. capacitor as is shown in Figure 2. 9. The operation of the impulse generator is as follows. Capacitor Ci is charged from... voltage shaping network. as possible in order to reduce oscillations in the wavefront and wavetail portions of the impulse voltage [1). The impulse voltage generator requires a, highly charged capacitor or bank of capacitors. Capacitors may be charged...

Menendez, Jorge Carlos

2012-06-07T23:59:59.000Z

332

Modeling the choice to switch from fuelwood to electricity Implications for giant panda habitat conservation  

E-Print Network [OSTI]

was explained by demographic and electricity factors (price, voltage, and outage frequency). In addition, lowering electricity prices and increasing electricity quality would encourage local residents to switchANALYSIS Modeling the choice to switch from fuelwood to electricity Implications for giant panda

An, Li

333

Phase Transitions and High-Voltage Electrochemical Behavior of LiCoO2 Thin Films Grown by Pulsed Laser Deposition  

E-Print Network [OSTI]

Laser Deposition H. Xia,a L. Lu,b,z Y. S. Meng,c and G. Cederc, * a Advanced Materials for Micro behavior of LiCoO2 thin-film cathodes prepared by pulsed laser deposition are studied for charging voltages- discharge curves. Ex situ X-ray diffraction measurements confirm structural changes and a phase transition

Ceder, Gerbrand

334

Effective switching frequency multiplier inverter  

DOE Patents [OSTI]

A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

Su, Gui-Jia (Oak Ridge, TN); Peng, Fang Z. (Okemos, MI)

2007-08-07T23:59:59.000Z

335

Insight into the Atomic Structure of High-Voltage Spinel 2 LiNi0.5Mn1.5O4 Cathode Material  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Application of high-voltage spinel LiNi0.5Mn1.5O4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi0.5Mn1.5O4 cathode material. Although it is well-known that the structure of LiNi0.5Mn1.5O4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations of local atomic-level and average structure of LiNi0.5Mn1.5O4 during first cycle (3.5–4.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi0.5Mn1.5O4//Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi0.5Mn1.5O4 particles show migration of TM ions into tetrahedral Li sites to form a Mn3O4-like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi0.5Mn1.5O4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi0.5Mn1.5O4 structure to obtain better electrochemical performance.

Huang, Xuejie [Chinese Academy of Sciences, Beijing (China); Yu, Xiqian [Brookhaven National Laboratory (BNL), Upton, NY (United States); Lin, Mingxiang [Chinese Academy of Sciences, Beijing (China); Ben, Liubin [Chinese Academy of Sciences, Beijing (China); Sun, Yang [Chinese Academy of Sciences, Beijing (China); Wang, Hao [Chinese Academy of Sciences, Beijing (China); Yang, Zhenzhong [Chinese Academy of Sciences, Beijing (China); Gu, Lin [Chinese Academy of Sciences, Beijing (China); Yang, Xiao -Qing [Brookhaven National Laboratory (BNL), Upton, NY (United States); Zhao, Haofei [Chinese Academy of Sciences, Beijing (China); Yu, Richeng [Chinese Academy of Sciences, Beijing (China); Armand, Michel [CIC Energigune, Alava (Spain)

2015-01-13T23:59:59.000Z

336

Microwave-triggered laser switch  

DOE Patents [OSTI]

A high-repetition rate switch is described for delivering short duration, high-powered electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

Piltch, M.S.

1982-05-19T23:59:59.000Z

337

Microwave-triggered laser switch  

DOE Patents [OSTI]

A high-repetition rate switch for delivering short duration, high-power electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

Piltch, Martin S. (Los Alamos, NM)

1984-01-01T23:59:59.000Z

338

Electro-optical voltage sensor head  

DOE Patents [OSTI]

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

Woods, Gregory K. (Idaho Falls, ID)

1998-01-01T23:59:59.000Z

339

Electron launching voltage monitor  

DOE Patents [OSTI]

An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors. 5 figs.

Mendel, C.W.; Savage, M.E.

1992-03-17T23:59:59.000Z

340

Reduction of interference on substation low voltage wiring  

SciTech Connect (OSTI)

This paper describes test results and mitigation methods of electromagnetic interference (EMI) on control and low voltage circuits in substations caused by air disconnect switch operation. The tests are focused on a comparison between unshielded and shielded circuits from capacitively coupled voltage transformers (CCVT) and other equipment circuits in the vicinity. New test data are presented comparing unshielded and shielded cables and transient currents on all connections to the CCVT including the pedestal and ground strap. The paper gives a practical and understandable explanation of the causes of EMI in substations and how shielded cable and parallel ground conductors reduce interference. Design guidelines are listed in the Conclusion.

Gavazza, R.J. [Pacific Gas and Electric Co., San Francisco, CA (United States)] [Pacific Gas and Electric Co., San Francisco, CA (United States); Wiggins, C.M. [Carl M. Wiggins and Associates, Friendswood, TX (United States)] [Carl M. Wiggins and Associates, Friendswood, TX (United States)

1996-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

A new technique to reject dc-link voltage ripple in PWM inverters  

E-Print Network [OSTI]

to acknowledge the support of my husband and parents. TA. BLE OF CONTENTS CHAPTER I INTRODUCTION Page I. l Inverter Power Supplies 1. 2 Output Voltage Control 1. 2. 1 Control Of Voltage Supplied To The Inverter I. 2. 2 Control Of Voltage Within... and output of Stage 3 78 34 Exact solution of the switching angle trajectories for harmonic elimination with voltage control (M). 85 CHAPTER I INTRODUCTION Finding ways to control the flow of electricity has been a. goal of inventors and scientists...

Shireen, Wajiha

1990-01-01T23:59:59.000Z

342

The Appraisal Journal, Price Effects of High Voltage Transmission Lines on Abutting Homes, BPA I-5 Corridor Reinforcement Project, March 2013  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2 .2004 NorthWeek(activeDirectory:

343

Switching dynamics in cholesteric blue phases  

E-Print Network [OSTI]

Blue phases are networks of disclination lines, which occur in cholesteric liquid crystals near the transition to the isotropic phase. They have recently been used for the new generation of fast switching liquid crystal displays. Here we study numerically the steady states and switching hydrodynamics of blue phase I (BPI) and blue phase II (BPII) cells subjected to an electric field. When the field is on, there are three regimes: for very weak fields (and strong anchoring at the boundaries) the blue phases are almost unaffected, for intermediate fields the disclinations twist (for BPI) and unzip (for BPII), whereas for very large voltages the network dissolves in the bulk of the cell. Interestingly, we find that a BPII cell can recover its original structure when the field is switched off, whereas a BPI cell is found to be trapped more easily into metastable configurations. The kinetic pathways followed during switching on and off entails dramatic reorganisation of the disclination networks. We also discuss the effect of changing the director field anchoring at the boundary planes and of varying the direction of the applied field.

A. Tiribocchi; G. Gonnella; D. Marenduzzo; E. Orlandini

2011-03-30T23:59:59.000Z

344

Enhanced open voltage of BiFeO{sub 3} polycrystalline film by surface modification of organolead halide perovskite  

SciTech Connect (OSTI)

Inorganic-organolead halide perovskite CH{sub 3}NH{sub 3}PbI{sub 3} modified BiFeO{sub 3} polycrystalline film has been established. The composite photoelectrode presents much larger open voltage and several magnitudes superior photoelectric conversion performance in comparison to the ordinary BiFeO{sub 3} polycrystalline film. The I-V curve shows that the short-circuit current (J{sub sc}) is 1.74?mA·cm{sup ?2} and open-circuit voltage (V{sub oc}) is 1.62?V, the device's photon to current efficiency is over 1%. The large open voltage and high photovoltaic efficiency is believed to attributed to the spontaneous polarization of composite perovskite induced by BiFeO{sub 3} lattice and modified reduced work function of the modified BiFeO{sub 3} surface. Our results clearly show that the present BiFeO{sub 3}-CH{sub 3}NH{sub 3}PbI{sub 3} planar device is capable to generate a large voltage in macro scale under visible light, leading an approach to further applications on photodetectors and optoelectronic switch.

Zhao, Pengjun [Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Bian, Liang; Xu, Jinbao, E-mail: xujb@ms.xjb.ac.cn; Chang, Aimin [Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China); Wang, Lei [Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China); Department of Research and Development, Shanghai Shanshan Tech. Co., Ltd., Shanghai 201209, China and Department of Chemistry, Zhejiang University, Hangzhou 310027 (China)

2014-07-07T23:59:59.000Z

345

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

346

Multiprocessor switch with selective pairing  

DOE Patents [OSTI]

System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or processor cores that provide one highly reliable thread for high-reliability connect with a system components such as a memory "nest" (or memory hierarchy), an optional system controller, and optional interrupt controller, optional I/O or peripheral devices, etc. The memory nest is attached to a selective pairing facility via a switch or a bus

Gara, Alan; Gschwind, Michael K; Salapura, Valentina

2014-03-11T23:59:59.000Z

347

Concept of Quasi-Capacitive Tapping of Bipolar Voltage-Controlled Oscillators  

E-Print Network [OSTI]

Concept of Quasi-Capacitive Tapping of Bipolar Voltage-Controlled Oscillators Aleksandar Tasic the active part of the oscillator and the LC-tank, as proposed in this paper, the voltage swing over the tank of high- performance bipolar voltage-controlled oscillators (VCO's). As the voltage-controlled oscillators

Serdijn, Wouter A.

348

Optoelectronic switching of addressable molecular crossbar junctions  

E-Print Network [OSTI]

This letter reports on the observation of optoelectronic switching in addressable molecular crossbar junctions fabricated using polymer stamp-printing method. The active medium in the junction is a molecular self-assembled monolayer softly sandwiched between gold electrodes. The molecular junctions are investigated through currentvoltage measurements at varied temperature (from 95 to 300 K) in high vacuum condition. The junctions show reversible optoelectronic switching with the highest on/off ratio of 3 orders of magnitude at 95 K. The switching behavior is independent of both optical wavelength and molecular structure, while it strongly depends on the temperature. Initial analysis indicates that the distinct binding nature of the molecule/electrode interfaces play a dominant role in the switching performance.

J. C. Li

2006-11-22T23:59:59.000Z

349

An optical switch  

DOE Patents [OSTI]

The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

Christophorou, L.G.; Hunter, S.R.

1987-04-30T23:59:59.000Z

350

Plasmonic enhanced ultrafast switch.  

SciTech Connect (OSTI)

Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.

Subramania,Ganapathi Subramanian; Reno, John Louis; Passmore, Brandon Scott; Harris, Tom.; Shaner, Eric Arthur; Barrick, Todd A.

2009-09-01T23:59:59.000Z

351

INTEGRATED GHz VOLTAGE CONTROLLED OSCILLATORS  

E-Print Network [OSTI]

INTEGRATED GHz VOLTAGE CONTROLLED OSCILLATORS Peter Kinget Bell Labs - Lucent Technologies Murray Hill, NJ (USA) Abstract The voltage controlled oscillator (VCO) is a critical sub. We focus on the de- sign of a critical sub-block: the voltage controlled oscillator (VCO). We review

Kinget, Peter

352

Michael Scholl, mss4@wustl.edu (A paper written under the guidance of Prof. Raj Jain) Download High availability is one of the major goals of smart grid systems. This paper examines the availability of wind turbines, a high voltage DC (HVDC)  

E-Print Network [OSTI]

the availability of wind turbines, a high voltage DC (HVDC) transmission system, and a supervisory control and data of a Wind Turbine 3.2 Availability Data 3.3 Sensitivity Analysis 4. HVDC Transmission System 4.1 Parts of a HVDC Transmission System 4.2 Availability Data 4.3 Sensitivity Analysis 5. Control System 5.1 Parts

Jain, Raj

353

Electro-optic voltage sensor for sensing voltage in an E-field  

DOE Patents [OSTI]

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

Woods, Gregory K. (Idaho Falls, ID); Renak, Todd W. (Idaho Falls, ID)

1999-01-01T23:59:59.000Z

354

Electro-optic voltage sensor for sensing voltage in an E-field  

DOE Patents [OSTI]

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 18 figs.

Woods, G.K.; Renak, T.W.

1999-04-06T23:59:59.000Z

355

Sequential circuit design for radiation hardened multiple voltage integrated circuits  

DOE Patents [OSTI]

The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

Clark, Lawrence T. (Phoenix, AZ); McIver, III, John K. (Albuquerque, NM)

2009-11-24T23:59:59.000Z

356

A radiation hard vacuum switch  

DOE Patents [OSTI]

A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

Boettcher, G.E.

1988-07-19T23:59:59.000Z

357

Comparative Study of Switched Reluctance Motors Performances for Two Current  

E-Print Network [OSTI]

of machines as high torque ripple, high acoustic noise and vibration limit their industrial applications [1Comparative Study of Switched Reluctance Motors Performances for Two Current Distributions a 3-phase, 6-slot, and 4-pole Mutually Coupled Switched Reluctance Motor (MCSRM 6/4) with new current

Paris-Sud XI, Université de

358

Thermionic gas switch  

DOE Patents [OSTI]

The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

1984-04-05T23:59:59.000Z

359

Design and applications of a flicker voltage generator  

SciTech Connect (OSTI)

In this paper, a 200W flicker voltage generator is made by using microcomputers and linear amplification circuits. The modulation amplitudes and frequencies based on the UIE {Delta}V{sub 10} evaluation can be arbitrarily assigned by software with high accuracy. The flicker voltage signals measured at the customer side also can be re-generated. Some applications, such as evaluating the effects of flicker voltage on incandescent and compact fluorescent lamps (CFLs), are also made. From experimental tests by use of the flicker voltage generator, the properties of some compact fluorescent lamps and incandescent lamps are compared. Those properties describe the relation between input voltage variation and output flux of lamps, such that there is direct description of influences of flicker voltages on lamps.

Chang, W.N.; Wu, C.J. [National Taiwan Inst. of Tech., Peitow-Taipei (Taiwan, Province of China). Dept. of Electrical Engineering

1995-12-31T23:59:59.000Z

360

REFINED RFP LOOP VOLTAGE CALCULATION J.C. Sprott  

E-Print Network [OSTI]

is the stored magnetic energy, Up is the plasma energy, and 'E is the global energy confinement time, which-of-merit for RFP devices is the loop voltage. Low loop voltage implies high plasma temperature and long energy is smallest if the loop is as close to the outside of the shell and as far from the primary windings

Sprott, Julien Clinton

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Humidity, Temperature, and Voltage (Presentation)  

SciTech Connect (OSTI)

An update is given on the work of the PV Quality Assurance Task Force; Group 3: studying the effects of humidity, temperature, and voltage bias.

Wohlgemuth, J.

2012-03-01T23:59:59.000Z

362

Energy Harvesting by Sweeping Voltage-Escalated Charging of a Reconfigurable Supercapacitor Array  

E-Print Network [OSTI]

Energy Harvesting by Sweeping Voltage-Escalated Charging of a Reconfigurable Supercapacitor Array charge pump to perform maximum power-transfer track- ing (MPTT) while charging a reservoir supercapacitor. The supercapacitors in the RSA can be dynamically configured for series or parallel topologies by means of a switch

Shinozuka, Masanobu

363

Multistage-Based Switching Fabrics for Scalable Routers  

E-Print Network [OSTI]

with distributed packet routing to achieve high scalability and low costs. Our fabrics are based on a multistage patterns are evaluated and discussed as well. Being scalable and of low costs, the proposed switching their arrival LCs toward their destined LCs. Switching fabrics naturally affect overall router perfor- mance

Tzeng, Nian-Feng

364

PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching  

E-Print Network [OSTI]

purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Absolute Maximum - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C 2001 Fairchild-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40

Ravikumar, B.

365

Modeling of the Voltage Waves in the LHC Main Dipole Circuits  

E-Print Network [OSTI]

When a fast power abort is triggered in the LHC main dipole chain, voltage transients are generated at the output of the power converter and across the energy-extraction switches. The voltage waves propagate through the chain of 154 superconducting dipoles and can have undesired effects leading to spurious triggering of the quench protection system and firing of the quench heaters. The phase velocity of the waves travelling along the chain changes due to the inhomogeneous AC behavior of the dipoles. Furthermore, complex phenomena of reflection and superposition are present in the circuit. For these reasons analytical calculations are not sufficient for properly analyzing the circuit behavior after a fast power abort. The transients following the switch-off of the power converter and the opening of the switches are analyzed by means of a complete electrical model, developed with the Cadence© suite (PSpice© based). The model comprises all the electrical components of the circuit, additional components simula...

Ravaioli, E; Formenti, F; Steckert, J; Thiesen, H; Verweij, A

2012-01-01T23:59:59.000Z

366

LM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators  

E-Print Network [OSTI]

LM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators General Description The LM139 series consists of four independent precision voltage comparators with an offset voltage clock timers; multivibrators and high voltage digital logic gates. The LM139 series was designed

Lanterman, Aaron

367

The quantum cryptographic switch  

E-Print Network [OSTI]

We illustrate using a quantum system the principle of a cryptographic switch, in which a third party (Charlie) can control to a continuously varying degree the amount of information the receiver (Bob) receives, after the sender (Alice) has sent her information. Suppose Charlie transmits a Bell state to Alice and Bob. Alice uses dense coding to transmit two bits to Bob. Only if the 2-bit information corresponding to choice of Bell state is made available by Charlie to Bob can the latter recover Alice's information. By varying the information he gives, Charlie can continuously vary the information recovered by Bob. The performance of the protocol subjected to the squeezed generalized amplitude damping channel is considered. We also present a number of practical situations where a cryptographic switch would be of use.

Srinatha Narayanaswamy; Omkar Srikrishna; R. Srikanth; Subhashish Banerjee; Anirban Pathak

2011-11-21T23:59:59.000Z

368

Intrinsic Surface Stability in LiMn2-xNix04-s (x = 0.45, 0.5) High Voltage Spinel Materials for Lithium Ion Batteries  

SciTech Connect (OSTI)

This work reports the surface stability of the high vollage Li ion cathode LiMn2_,Ni,Ooh\\ (x = 0.5, 0.45) by comparing thin fi lm and powder composite electrodes after cycling using X-ray photoelectron spectroscopy. The thin film electrodes offer the abili ty to probe the surface of the material without the need of a conductive agent and polymer binder typically used in composite electrodes. The resulls suggest that neither oxidation of PP6 to POF3 nor the decomposition of ethylene carbonate or dimethylene carbonate occurs on the surface of the spinel material. These resulls confirm the enhanced cycling stability and rate capability associated with the high vollage spinel material and suggests that the SE!IIayer fonns due to the reaction of electrochemically inactive components in composite electrodes with the electrolyte.

Carroll, Kyler J [University of California, San Diego; Yang, Ming-Che [University of Florida, Gainesville; Veith, Gabriel M [ORNL; Dudney, Nancy J [ORNL; Meng, Ying Shirley [University of California, San Diego

2012-01-01T23:59:59.000Z

369

Optical Label Switching Technology and Energy-Efficient Future Networks S. J. Ben Yoo  

E-Print Network [OSTI]

Optical Label Switching Technology and Energy-Efficient Future Networks S. J. Ben Yoo Department traffic with extremely low energy consumption and high goodput. Keywords: Optical packet switching, optical label switching, energy efficient networks. 1. Introduction The future Internet is rapidly

Kolner, Brian H.

370

Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions formed in Si.  

E-Print Network [OSTI]

Si Ge E-field Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions (z) energy Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared Ali K, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can

Miller, David A. B.

371

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices  

E-Print Network [OSTI]

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices will be available after the conference. Abstract Silicon Carbide devices can achieve very high switching speed-mode filtering). The consequences on the switching speed are discussed. 1. Introduction Silicon carbide (Si

Paris-Sud XI, Université de

372

Local Dynamic Reactive Power for Correction of System Voltage Problems  

SciTech Connect (OSTI)

Distribution systems are experiencing outages due to a phenomenon known as local voltage collapse. Local voltage collapse is occurring in part because modern air conditioner compressor motors are much more susceptible to stalling during a voltage dip than older motors. These motors can stall in less than 3 cycles (.05s) when a fault, such as on the sub-transmission system, causes voltage to sag to 70 to 60%. The reasons for this susceptibility are discussed in the report. During the local voltage collapse, voltages are depressed for a period of perhaps one or two minutes. There is a concern that these local events are interacting together over larger areas and may present a challenge to system reliability. An effective method of preventing local voltage collapse is the use of voltage regulation from Distributed Energy Resources (DER) that can supply or absorb reactive power. DER, when properly controlled, can provide a rapid correction to voltage dips and prevent motor stall. This report discusses the phenomenon and causes of local voltage collapse as well as the control methodology we have developed to counter voltage sag. The problem is growing because of the use of low inertia, high efficiency air conditioner (A/C) compressor motors and because the use of electric A/C is growing in use and becoming a larger percentage of system load. A method for local dynamic voltage regulation is discussed which uses reactive power injection or absorption from local DER. This method is independent, rapid, and will not interfere with conventional utility system voltage control. The results of simulations of this method are provided. The method has also been tested at the ORNL s Distributed Energy Communications and Control (DECC) Laboratory using our research inverter and synchronous condenser. These systems at the DECC Lab are interconnected to an actual distribution system, the ORNL distribution system, which is fed from TVA s 161kV sub-transmission backbone. The test results are also provided and discussed. The simulations and testing show that local voltage control from DER can prevent local voltage collapse. The results also show that the control can be provided so quickly, within 0.5 seconds, that is does not interfere with conventional utility methods.

Kueck, John D [ORNL; Rizy, D Tom [ORNL; Li, Fangxing [ORNL; Xu, Yan [ORNL; Li, Huijuan [University of Tennessee, Knoxville (UTK); Adhikari, Sarina [ORNL; Irminger, Philip [ORNL

2008-12-01T23:59:59.000Z

373

Low voltage nonprimary explosive detonator  

DOE Patents [OSTI]

A low voltage, electrically actuated, nonprimary explosive detonator is disclosed wherein said detonation is achieved by means of an explosive train in which a deflagration-to-detonation transition is made to occur. The explosive train is confined within a cylindrical body and positioned adjacent to low voltage ignition means have electrical leads extending outwardly from the cylindrical confining body. Application of a low voltage current to the electrical leads ignites a self-sustained deflagration in a donor portion of the explosive train which then is made to undergo a transition to detonation further down the train.

Dinegar, Robert H. (Los Alamos, NM); Kirkham, John (Newbury, GB2)

1982-01-01T23:59:59.000Z

374

The vertical voltage termination technique characterizations of single die multiple 600V power  

E-Print Network [OSTI]

The vertical voltage termination technique ­ characterizations of single die multiple 600V power.grenoble-inp.fr Abstract-- Deep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept

Paris-Sud XI, Université de

375

Fast Optimization of Nano-CMOS Voltage-Controlled Oscillator using Polynomial Regression and Genetic Algorithm  

E-Print Network [OSTI]

Fast Optimization of Nano-CMOS Voltage-Controlled Oscillator using Polynomial Regression in a current-starved 50nm voltage-controlled oscillator (VCO). Accurate polynomial-regression based models have-CMOS), Voltage-Controlled Oscillator (VCO). 1. Introduction Digital design exploration and optimization is highly

Mohanty, Saraju P.

376

Optically controlled waveplate at a telecom wavelength using a ladder transition in Rb atoms for all-optical switching and high speed Stokesmetric Imaging  

E-Print Network [OSTI]

We demonstrate an optically controlled waveplate at ~1323 nm using the 5S1/2-5P1/2-6S1/2 ladder transition in a Rb vapor cell. The lower leg of the transitions represents the control beam, while the upper leg represents the signal beam. We show that we can place the signal beam in any arbitrary polarization state with a suitable choice of polarization of the control beam. Specifically, we demonstrate a differential phase retardance of ~180 degrees between the two circularly polarized components of a linearly polarized signal beam. We also demonstrate that the system can act as a Quarter Wave plate. The optical activity responsible for the phase retardation process is explained in terms of selection rules involving the Zeeman sublevels. As such, the system can be used to realize a fast Stokesmetric Imaging system with a speed of nearly 5 MHz. When implemented using a tapered nano fiber embedded in a vapor cell, this system can be used to realize an ultra-low power all-optical switch as well as a Quantum Zeno Effect based all-optical logic gate by combining it with an optically controlled polarizer, previously demonstrated by us. We present numerical simulations of the system using a comprehensive model which incorporates all the relevant Zeeman sub-levels in the system, using a novel algorithm recently developed by us for efficient computation of the evolution of an arbitrary large scale quantum system.

Subramanian Krishnamurthy; Y. Tu; Y. Wang; S. Tseng; M. S. Shahriar

2014-08-01T23:59:59.000Z

377

Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}  

SciTech Connect (OSTI)

The layered compound BaCo{sub 1?x}Ni{sub x}S{sub 2?y} (0.05?high-T tetragonal antiferromagnetic insulator around 200?K with huge hysteresis (?40?K) and large volume change (?0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1?x}Ni{sub x}S{sub 2?y} (nominal x?=?0.1 and y?=?0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M. [Physics Department, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

2014-04-14T23:59:59.000Z

378

Voltage tunable microwave ferrite resonator  

E-Print Network [OSTI]

A novel method of implementing a tunable resonator using an applied voltage is presented. Stress is used to tune a microstrip resonator fabricated on a polycrystalline ferrite substrate. The stress was applied either ...

Oates, Daniel E.

379

Saving Megawatts with Voltage Optimization  

E-Print Network [OSTI]

that had been installed at several electric utility distribution substations in the U.S. and Canada. These systems, being operated in Conservation Voltage Regulation mode, have provided significant energy conservation where they have been installed...

Wilson, T.; Bell, D.

2010-01-01T23:59:59.000Z

380

Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe  

SciTech Connect (OSTI)

This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

Prevosto, L.; Mancinelli, B. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina)] [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Kelly, H. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina) [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Instituto de Física del Plasma (CONICET), Departamento de Física, Facultad de Ciencias Exactas y Naturales (UBA) Ciudad Universitaria Pab. I, 1428 Buenos Aires (Argentina)

2013-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Switching it up | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAbout »LabSustainability Ames Laboratory isSweetSwitching

382

High dynamic range charge measurements  

DOE Patents [OSTI]

A charge amplifier for use in radiation sensing includes an amplifier, at least one switch, and at least one capacitor. The switch selectively couples the input of the switch to one of at least two voltages. The capacitor is electrically coupled in series between the input of the amplifier and the input of the switch. The capacitor is electrically coupled to the input of the amplifier without a switch coupled therebetween. A method of measuring charge in radiation sensing includes selectively diverting charge from an input of an amplifier to an input of at least one capacitor by selectively coupling an output of the at least one capacitor to one of at least two voltages. The input of the at least one capacitor is operatively coupled to the input of the amplifier without a switch coupled therebetween. The method also includes calculating a total charge based on a sum of the amplified charge and the diverted charge.

De Geronimo, Gianluigi

2012-09-04T23:59:59.000Z

383

Electro-optic voltage sensor with Multiple Beam Splitting  

DOE Patents [OSTI]

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

Woods, Gregory K. (Cornelius, OR); Renak, Todd W. (Idaho Falls, ID); Crawford, Thomas M. (Idaho Falls, ID); Davidson, James R. (Idaho Falls, ID)

2000-01-01T23:59:59.000Z

384

Electro-optic voltage sensor with beam splitting  

DOE Patents [OSTI]

The invention is a miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware typically found in the prior art. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

Woods, Gregory K. (Cornelius, OR); Renak, Todd W. (Idaho Falls, ID); Davidson, James R. (Idaho Falls, ID); Crawford, Thomas M. (Idaho Falls, ID)

2002-01-01T23:59:59.000Z

385

Voltage, energy and power in electric circuits  

E-Print Network [OSTI]

Voltage, energy and power in electric circuits Science teaching unit #12;Disclaimer The Department-2008DVD-EN Voltage, energy and power in electric circuits #12;#12;© Crown copyright 2008 1The National Strategies | Secondary Voltage, energy and power in electric circuits 00094-2008DVD-EN Contents Voltage

Berzins, M.

386

Production of high voltage by ion bombardment  

E-Print Network [OSTI]

in nuclear fusion. It is a way for the eAiciency of mirror reactors to be increased by recovering the charged particles that escape. : ' ln 1944, E. P. Wigner first proposed using fission fragments for direct energy conversion. There were several.... ' Recently the idea of direct energy conversion has been revisited. The United States Department of Energy (US DOE) has begun a Nuclear Energy Research Initiative (NERI) project on methods of direct energy conversion in fission reactors. One of the systems...

Phinney, Lucas Carter

2003-01-01T23:59:59.000Z

387

Polymerizable Additive for Passivating High Voltage Cathodes  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home Design Passive SolarCenterYou areConstructionA Polymerizable

388

An experimental study of VBR video over various ATM switch architectures  

SciTech Connect (OSTI)

One of the most important components of an Asynchronous Transfer Mode (ATM) network is the switch. Switch design is not a part of the ATM standards so vendors use a wide variety of techniques to build their switches. In this paper, the authors present experimental results of switching and multiplexing real-time Variable Bit Rate (VBR) video traffic (JPEG, MPEG-1, and MPEG-2) through two different ATM switch architectures. Real-time VBR traffic, such as digital video, is particularly interesting due to its high demands in terms of bandwidth, real-time delivery and processing requirements. The experiments show that the fastest switches, i.e., lowest latencies, do not necessarily perform better when transmitting VBR video. The impact of the high speed network components; characteristics, such as switch fabric architecture, buffering strategies, and higher layer transport protocols (i.e., UDP, TCP/IP), are illustrated through the experimental results.

Tsang, R.P. [Sandia National Labs., Livermore, CA (United States); Hsieh, J.; Du, D.H.C. [Univ. of Minnesota, Minneapolis, MN (United States)

1997-12-31T23:59:59.000Z

389

Electro-optic voltage sensor head  

DOE Patents [OSTI]

The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers.

Crawford, Thomas M. (Idaho Falls, ID); Davidson, James R. (Idaho Falls, ID); Woods, Gregory K. (Cornelius, OR)

1999-01-01T23:59:59.000Z

390

Electro-optic voltage sensor head  

DOE Patents [OSTI]

The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers. 6 figs.

Crawford, T.M.; Davidson, J.R.; Woods, G.K.

1999-08-17T23:59:59.000Z

391

Robust adaptive control of switched systems  

E-Print Network [OSTI]

In this thesis, robust adaptive controllers are developed for classes of switched nonlinear systems. Switched systems are those governed by differential equations, which undergo vector field switching due to sudden changes ...

El-Rifai, Khalid, 1979-

2007-01-01T23:59:59.000Z

392

Optimized scalable network switch  

DOE Patents [OSTI]

In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton On Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY); Gara, Alan G. (Mount Kisco, NY); Giampapa, Mark E. (Irvington, NY); Heidelberger, Philip (Cortlandt Manor, NY); Steinmacher-Burow, Burkhard D. (Mount Kisco, NY); Takken, Todd E. (Mount Kisco, NY); Vranas, Pavlos M. (Bedford Hills, NY)

2007-12-04T23:59:59.000Z

393

Optimized scalable network switch  

DOE Patents [OSTI]

In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton on Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY)

2010-02-23T23:59:59.000Z

394

E-Print Network 3.0 - active load voltage Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Page: << < 1 2 3 4 5 > >> 41 Performance Analysis of a Hybrid Asymmetric Multilevel Inverter for High Voltage Active Power Filter Applications Summary: Performance Analysis of a...

395

Distribution of supercurrent switching in graphene under the proximity effect.  

SciTech Connect (OSTI)

We study the stochastic nature of switching current in hysteretic current-voltage characteristics of superconductor-graphene-superconductor junctions. We find that the dispersion of the switching current distribution scales with temperature as {sigma}{sub I} {proportional_to} T{sup {alpha}{sub G}} with {alpha}{sub G} as low as 1/3. This observation is in sharp contrast to the known Josephson junction behavior where {sigma}{sub I} {proportional_to} T{sup {alpha}{sub J}} with {alpha}{sub J} = 2/3. We propose an explanation using a generalized version of Kurkijaervi's theory for the flux stability in rf-SQUID and attribute this anomalous effect to the temperature dependence of the critical current which persists down to low temperatures.

Coskun, U. C.; Brenner, M.; Hymel, T.; vakaryuk, V.; Levchenko, A.; Bezryadin, A. (Materials Science Division); (Univ. Illinois-Urbana); (Univ. Texas); (Michigan State Univ.)

2012-01-01T23:59:59.000Z

396

Gas mixture for diffuse-discharge switch  

DOE Patents [OSTI]

Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF/sub 4/, C/sub 2/F/sub 6/, C/sub 3/F/sub 8/, n-C/sub 4/F/sub 10/, WF/sub 6/, (CF/sub 3/)/sub 2/S and (CF/sub 3/)/sub 2/O.

Christophorou, L.G.; Carter, J.G.; Hunter, S.R.

1982-08-31T23:59:59.000Z

397

Ancillary service details: Voltage control  

SciTech Connect (OSTI)

Voltage control is accomplished by managing reactive power on an alternating-current power system. Reactive power can be produced and absorbed by both generation and transmission equipment. Reactive-power devices differ substantially in the magnitude and speed of response and in their capital costs. System operators, transmission owners, generators, customers, power marketers, and government regulators need to pay close attention to voltage control as they restructure the U.S. electricity industry. Voltage control can affect reliability and commerce in three ways: (1) Voltages must be maintained within an acceptable range for both customer and power-system equipment to function properly. (2) The movement of reactive power consumes transmission resources, which limits the ability to move real power and worsens congestion. (3) The movement of reactive power results in real-power losses. When generators are required to supply excessive amounts of reactive power, their real-power production must be curtailed. These opportunity costs are not currently compensated for in most regions. Current tariffs are based on embedded costs. These embedded-cost tariffs average about $0.51/MWh, equivalent to $1.5 billion annually for the United States as a whole. Although this cost is low when compared with the cost of energy, it still aggregates to a significant amount of money. This report takes a basic look at why the power system requires reactive power (an appendix explains the fundamentals of real and reactive power). The report then examines the various types of generation and transmission resources used to supply reactive power and to control voltage. Finally it discusses how these resources are deployed and paid for in several reliability regions around the country. As the U.S. electricity industry is restructured, the generation, transmission, and system-control equipment and functions that maintain voltages within the appropriate ranges are being deintegrated.

Kirby, B.; Hirst, E.

1997-12-01T23:59:59.000Z

398

Spin switches for compact implementation of neuron and synapse  

SciTech Connect (OSTI)

Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

Quang Diep, Vinh, E-mail: vdiep@purdue.edu; Sutton, Brian; Datta, Supriyo [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Behin-Aein, Behtash [GLOBALFOUNDRIES, Inc., Sunnyvale, California 94085 (United States)

2014-06-02T23:59:59.000Z

399

An Adaptive Voltage Control Algorithm with Multiple Distributed Energy  

SciTech Connect (OSTI)

Distributed energy resources (DE) with power electronics (PE) interfaces with the right control are capable of providing reactive power related ancillary services. Voltage regulation in particular has drawn much attention. In this paper the challenges to control multiple DEs to regulate the local voltage in distribution systems is addressed and a decentralized adaptive voltage control method is proposed. The simulation results in different system conditions show that this adaptive voltage control method is capable of satisfying the fast response speed requirement without causing oscillation or instability of the system. Since this method has high tolerance to the shortage of the system parameters and can be widely adaptive to the variable operation situations of the power systems, it is very suited for the utility application.

Li, Huijuan [University of Tennessee, Knoxville (UTK); Li, Fangxing [ORNL; Adhikari, Sarina [ORNL; Xu, Yan [ORNL; Rizy, D Tom [ORNL; Kueck, John D [ORNL

2009-01-01T23:59:59.000Z

400

Microwave pulse compression from a storage cavity with laser-induced switching  

DOE Patents [OSTI]

A laser-induced switch and a multiple cavity configuration are disclosed for producing high power microwave pulses. The microwave pulses are well controlled in wavelength and timing, with a quick rise time and a variable shape and power of the pulse. In addition, a method of reducing pre-pulse leakage to a low level is disclosed. Microwave energy is directed coherently to one or more cavities that stores the energy in a single mode, represented as a standing wave pattern. In order to switch the stored microwave energy out of the main cavity and into the branch waveguide, a laser-actuated switch is provided for the cavity. The switch includes a laser, associated optics for delivering the beam into the main cavity, and a switching gas positioned at an antinode in the main cavity. When actuated, the switching gas ionizes, creating a plasma, which becomes reflective to the microwave energy, changing the resonance of the cavity, and as a result the stored microwave energy is abruptly switched out of the cavity. The laser may directly pre-ionize the switching gas, or it may pump an impurity in the switching gas to an energy level which switches when a pre-selected cavity field is attained. Timing of switching the cavities is controlled by varying the pathlength of the actuating laser beam. For example, the pathlengths may be adjusted to output a single pulse of high power, or a series of quick lower power pulses.

Bolton, Paul R. (Menlo Park, CA)

1992-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices  

SciTech Connect (OSTI)

The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.

Hong, D. S.; Wang, W. X.; Chen, Y. S., E-mail: yschen@aphy.iphy.ac.cn; Sun, J. R.; Shen, B. G. [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academic of Sciences, Beijing 100190 (China)

2014-09-15T23:59:59.000Z

402

Optical Packet Switching -1 Optical Networks  

E-Print Network [OSTI]

Optical Packet Switching - 1 Optical Networks: from fiber transmission to photonic switching Optical Packet Switching Fabio Neri and Marco Mellia TLC Networks Group ­ Electronics Department e.mellia@polito.it ­ tel. 011 564 4173 #12;Optical Packet Switching - 2 · This work is licensed under the Creative Commons

Mellia, Marco

403

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices  

SciTech Connect (OSTI)

The resistive switching (RS) properties of strontium titanate (Sr{sub 1+x}Ti{sub 1+y}O{sub 3+(x+2y)}, STO) based metal-oxide-metal structures prepared from industrial compatible processes have been investigated focusing on the effects of composition, microstructure, and device size. Metastable perovskite STO films were prepared on Pt-coated Si substrates utilizing plasma-assisted atomic layer deposition (ALD) from cyclopentadienyl-based metal precursors and oxygen plasma at 350?°C, and a subsequent annealing at 600?°C in nitrogen. Films of 15?nm and 12?nm thickness with three different compositions [Sr]/([Sr]?+?[Ti]) of 0.57 (Sr-rich STO), 0.50 (stoichiometric STO), and 0.46 (Ti-rich STO) were integrated into Pt/STO/TiN crossbar structures with sizes ranging from 100??m{sup 2} to 0.01??m{sup 2}. Nano-structural characterizations revealed a clear effect of the composition of the as-deposited STO films on their crystallization behavior and thus on the final microstructures. Local current maps obtained by local-conductivity atomic force microscopy were in good agreement with local changes of the films' microstructures. Correspondingly, also the initial leakage currents of the Pt/STO/TiN devices were affected by the STO compositions and by the films' microstructures. An electroforming process set the Pt/STO/TiN devices into the ON-state, while the forming voltage decreased with increasing initial leakage current. After a RESET process under opposite voltage has been performed, the Pt/STO/TiN devices showed a stable bipolar RS behavior with non-linear current-voltage characteristics for the high (HRS) and the low (LRS) resistance states. The obtained switching polarity and nearly area independent LRS values agree with a filamentary character of the RS behavior according to the valence change mechanism. The devices of 0.01??m{sup 2} size with a 12?nm polycrystalline stoichiometric STO film were switched at a current compliance of 50??A with voltages of about ±1.0?V between resistance states of about 40?k? (LRS) and 1 M? (HRS). After identification of the influences of the films' microstructures, i.e., grain boundaries and small cracks, the remaining RS properties could be ascribed to the effect of the [Sr]/([Sr]?+?[Ti]) composition of the ALD STO thin films.

Aslam, N.; Rodenbücher, C.; Szot, K.; Waser, R.; Hoffmann-Eifert, S., E-mail: su.hoffmann@fz-juelich.de [Peter-Grünberg Institute (PGI-7), Forschungszentrum Jülich and JARA-FIT, 52425 Jülich (Germany); Longo, V.; Roozeboom, F.; Kessels, W. M. M. [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

2014-08-14T23:59:59.000Z

404

Towards forming-free resistive switching in oxygen engineered HfO{sub 2?x}  

SciTech Connect (OSTI)

We have investigated the resistive switching behavior in stoichiometric HfO{sub 2} and oxygen-deficient HfO{sub 2?x} thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO{sub 2?x} thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P.; Zaumseil, P.; Sowinska, M.; Walczyk, D. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Gloskovskii, A. [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-02-10T23:59:59.000Z

405

Plasma flow switch experiment on Procyon  

SciTech Connect (OSTI)

This report presents the results obtained from a series of plasma flow switch experiments done on the Procyon explosive pulse power generator. These experiments involved switching into a fixed inductance dummy load and also into a dynamic implosion load. The results indicated that the switch did fairly well at switching current into the load, but the results for the implosion are more ambiguous. The results are compared to calculations and the implications for future plasma flow switch work are discussed.

Benage, J.F. Jr.; Bowers, R.; Peterson, D. [and others

1995-09-01T23:59:59.000Z

406

Onset voltage of corona on coated conductors  

SciTech Connect (OSTI)

This paper is aimed for investigating the effect of surface coating on the positive and negative onset voltages of corona from stressed conductor as a pre-requisite for onset-voltage calculation. The electric field is accurately calculated by the charge simulation technique. The calculated onset voltages agreed satisfactorily with those measured experimentally for bare conductors. The effect of coating-layer thickness and permittivity as well as conductor radius and height on the onset-voltage values is discussed.

Abdel-Salam, M. [Assiut Univ. (Egypt). Electrical Engineering Dept.; Abo-Shal, Y. [SCECO-East, Dammam (Saudi Arabia). Electrical Engineering Div.

1995-12-31T23:59:59.000Z

407

4 ESS (trademark) switch electromagnetic-pulse assessment. Volume 2. Task 3 laboratory testing of the 4 ESS Switch. Final report  

SciTech Connect (OSTI)

The 4ESS Switch was subjected to test sequences representative of electromagnetic stresses following a high-altitude nuclear blast. These laboratory tests revealed some potential equipment sensitivities requiring only minor modifications. With these modifications implemented, the 4 ESS Switch demonstrated considerable robustness in servicing calls following current injection stress. (jhd)

Not Available

1989-12-01T23:59:59.000Z

408

Dynamic Voltage Regulation Using Distributed Energy Resources  

SciTech Connect (OSTI)

Many distributed energy resources (DE) are near load centres and equipped with power electronics converters to interface with the grid, therefore it is feasible for DE to provide ancillary services such as voltage regulation, nonactive power compensation, and power factor correction. A synchronous condenser and a microturbine with an inverter interface are implemented in parallel in a distribution system to regulate the local voltage. Voltage control schemes of the inverter and the synchronous condenser are developed. The experimental results show that both the inverter and the synchronous condenser can regulate the local voltage instantaneously, while the dynamic response of the inverter is faster than the synchronous condenser; and that integrated voltage regulation (multiple DE perform voltage regulation) can increase the voltage regulation capability, increase the lifetime of the equipment, and reduce the capital and operation costs.

Xu, Yan [ORNL; Rizy, D Tom [ORNL; Li, Fangxing [ORNL; Kueck, John D [ORNL

2007-01-01T23:59:59.000Z

409

New Switches for Utility-Scale Inverters: First In-Class Demonstration of a Completely New Type of SiC Bipolar Switch (15kV-20kV) for Utility-Scale Inverters  

SciTech Connect (OSTI)

Solar ADEPT Project: The SiCLAB is developing a new power switch for utility-scale PV inverters that would improve the performance and significantly reduce the size, weight, and energy loss of PV systems. A power switch controls the electrical energy flowing through an inverter, which takes the electrical current from a PV solar panel and converts it into the type and amount of electricity that is compatible with the electric grid. SiCLAB is using silicon carbide (SiC) semiconductors in its new power switches, which are more efficient than the silicon semiconductors used to conduct electricity in most conventional power switches today. Switches with SiC semiconductors can operate at much higher temperatures, as well as higher voltage and power levels than silicon switches. SiC-based power switches are also smaller than those made with silicon alone, so they result in much smaller and lighter electrical devices. In addition to their use in utility-scale PV inverters, SiCLAB’s new power switches can also be used in wind turbines, railways, and other smart grid applications.

None

2011-12-31T23:59:59.000Z

410

Surface and Structural Stabilities of Carbon Additives in High...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Structural Stabilities of Carbon Additives in High Voltage Lithium Ion Batteries. Surface and Structural Stabilities of Carbon Additives in High Voltage Lithium Ion Batteries....

411

Voltage Vehicles | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformationSEDS data Jump to: navigation, search ToolVoith HydroVoltage

412

2.3-MW Medium-Voltage, Three-Level Wind Energy Inverter Applying a Unique Bus Structure and 4.5-kV Si/SiC Hybrid Isolated Power Modules: Preprint  

SciTech Connect (OSTI)

A high-efficiency, 2.3-MW, medium-voltage, three-level inverter utilizing 4.5-kV Si/SiC (silicon carbide) hybrid modules for wind energy applications is discussed. The inverter addresses recent trends in siting the inverter within the base of multimegawatt turbine towers. A simplified split, three-layer laminated bus structure that maintains low parasitic inductances is introduced along with a low-voltage, high-current test method for determining these inductances. Feed-thru bushings, edge fill methods, and other design features of the laminated bus structure provide voltage isolation that is consistent with the 10.4-kV module isolation levels. Inverter efficiency improvement is a result of the (essential) elimination of the reverse recovery charge present in 4.5-kV Si PIN diodes, which can produce a significant reduction in diode turn-off losses as well as insulated-gate bipolar transistor (IGBT) turn-on losses. The hybrid modules are supplied in industry-standard 140 mm x 130 mm and 190 mm x 130 mm packages to demonstrate direct module substitution into existing inverter designs. A focus on laminated bus/capacitor-bank/module subassembly level switching performance is presented.

Erdman, W.; Keller, J.; Grider, D.; VanBrunt, E.

2014-11-01T23:59:59.000Z

413

Q switching by self-focusing  

SciTech Connect (OSTI)

A novel passive technique for obtaining short-laser-pulse emission is presented. A cell with a high-second-order refractive-index liquid is included in an unstable laser cavity. The external self-focusing introduced by the cell at higher optical intensities reduces the diffraction losses, producing modulation of the gain and Q switching of the cavity. Compared with saturable absorbers, this method provides better mode quality, avoids filamentary emission, and is not restricted in wavelength. Experimental results are presented that are in good agreement with the numerical model developed.

Marconi, M.C.; Martinez, O.E.; Diodati, F.P.

1985-08-01T23:59:59.000Z

414

Optical switch using Risley prisms  

DOE Patents [OSTI]

An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

2003-04-15T23:59:59.000Z

415

Optical Switch Using Risley Prisms  

DOE Patents [OSTI]

An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

2005-02-22T23:59:59.000Z

416

The Matrix Converter Drive Performance Under Abnormal Input Voltage Conditions  

E-Print Network [OSTI]

that generates variable magnitude variable frequency output voltage from the ac utility line. It has high power conversion device, the disturbances at the ac utility grid (line) side are immediately reflected to the load and large capacitor associated with it, there is no stored energy in the MC. As a result, the utility line

Hava, Ahmet

417

Experimental characterization of faults on low-voltage systems  

E-Print Network [OSTI]

arcing ground faults '10'. The first scheme is very similar to the Ground Sensor Protection scheme described in i8j. The second scheme employs the fact that the voltage waveshape at the 1'suit point is flat topped. Harmonic analysis shows that... value when an arcing fault takes place. Continued presence of a, relatively high third- harmonic component in the bus voltage is a definite sign that there is an arcing fault in the system, Kusko and Peeran recommended the use of a, third harmonic...

Ahmed, Jubayer

1992-01-01T23:59:59.000Z

418

Bi-directional power control system for voltage converter  

DOE Patents [OSTI]

A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals. 10 figs.

Garrigan, N.R.; King, R.D.; Schwartz, J.E.

1999-05-11T23:59:59.000Z

419

Bi-directional power control system for voltage converter  

DOE Patents [OSTI]

A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals.

Garrigan, Neil Richard (Niskayuna, NY); King, Robert Dean (Schenectady, NY); Schwartz, James Edward (Slingerlands, NY)

1999-01-01T23:59:59.000Z

420

Chapter 17. High-Voltage Systems and Dielectric Materials High-Voltage Systems and Dielectric Materials  

E-Print Network [OSTI]

aromatic, naphthenic, and paraffinic molecules with complex molecular structures. With the advancement

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Voltage controlled MESFET pulse shape generator  

SciTech Connect (OSTI)

A programmable pulse shape generator capable of producing pulse shapes for Nova and Beamlet has been designed and simulated using the circuit code SPICE. The design utilizes power MESFETS, which are commonly used in microwave amplifiers. The pulse shape is varied by setting a bias voltage on each in a chain of MESFETS with a 200 ps temporal resolution. The electrical pulse then drives an integrated electro-optic modulator similar to what is on Beamlet. Pulse shapes 22 and 25, used on Nova, have been generated by this design. There is no fundamental barrier to making such a pulse generator for use on the National Ignition Facility. In fact, the longer time scales on the NIF pulse will ease the high speed requirements of the pulse shape generator allowing the use of less expensive components. The next step will be to build a prototype circuit for initial testing on Beamlet and Nova.

Burkhart, S.C.

1994-10-26T23:59:59.000Z

422

Design and Evaluation of a 42-V Automotive Alternator With Integrated Switched-Mode Rectifier  

E-Print Network [OSTI]

This paper presents techniques for the design of high-power Lundell alternators with integrated switched-mode rectifiers. A multisection stator winding and interleaved rectifier arrangement is introduced that enables high ...

Tang, Sai Chun

423

Supply Voltage Degradation Aware Analytical Placement Andrew B. Kahng Bao Liu Qinke Wang  

E-Print Network [OSTI]

% performance degradation, and the effect is super-linear [22]. Therefore, power/ground Work partially supported along a supply cur- rent path, and (2) adding large decoupling capacitors close to supply voltage supply voltage drop). For high frequency de- signs, a number of decoupling capacitors need to be added

Liu, Bao

424

LM193/LM293/LM393/LM2903 Low Power Low Offset Voltage Dual Comparators  

E-Print Network [OSTI]

LM193/LM293/LM393/LM2903 Low Power Low Offset Voltage Dual Comparators General Description The LM clock timers; multivibrators and high voltage digital logic gates. The LM193 series was designed to directly interface with TTL and CMOS. When operated from both plus and minus power supplies, the LM193

Lanterman, Aaron

425

VOLTAGE COLLAPSE AND TRANSIENT ENERGY FUNCTION ANALYSES OF AC/DC SYSTEMS  

E-Print Network [OSTI]

for power system dynamic models, including a third order representation of high voltage direct current (HVDC power limits, HVDC firing angle limits and voltage dependent current order limits (VDCOL) are shown the derivation of individual component Lyapunov functions for simplified models of HVDC links connected

Cañizares, Claudio A.

426

Resistive switching and threshold switching behaviors in La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} ceramics  

SciTech Connect (OSTI)

The effects of cobalt doping on the electrical conductivity of La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} (LBFCO, x = 0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 Degree-Sign C and 80 Degree-Sign C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.

Wang, S. Y.; Qiu, Xue; Feng, Yu; Hou, X. G.; Yu, D. S.; Li, D. J. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, W. F. [Tianjin Key laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Gao, J. [Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

2012-08-01T23:59:59.000Z

427

ELECTRICAL AGING OF 15 KV EPR CABLES ENERGIZED BY AC VOLTAGE WITH SWITCHING IMPULSES SUPERIMPOSED.  

E-Print Network [OSTI]

?? In this study, the electrical aging of 15 kV Ethylene Propylene Rubber (EPR) power cables, located in PVC pipes containing water, was conducted by… (more)

Zanwar, Anand Umeshlal

2011-01-01T23:59:59.000Z

428

Design and Implementation of Switching Voltage Integrated Circuits Based on Sliding Mode Control  

E-Print Network [OSTI]

: : : : : : 29 xv FIGURE Page 16 Sine-exponential-shaped pulse-width modulation : : : : : : : : : : : : : 30 17 Family of exponential-shaped waveforms for different values of Ne : : : : 31 18 Total harmonic distortion of class D amplifier for different..., and their present and future market distribution. Moreover, the harmonic distortion of open-loop class D amplifiers based on pulse-width modulation (PWM) is analyzed by applying the duty cycle variation technique for the most popular carrier waveforms giving an easy...

Rojas Gonzalez, Miguel Angel

2010-10-12T23:59:59.000Z

429

Increasing output energy from a passively Q-switched Er:glass laser  

E-Print Network [OSTI]

designators, laser range finders, wind metrology, LIDARs, and communication [8­10]. Passive Q- switches have many advantages over active ones. These include low cost, compact size and weight, robustness, and high are passively Q-switched, only the lowest spatial mode can develop. Attempts to increase the pump power in order

Friesem, Asher A.

430

Minimizing Simultaneous Switching Noise at Reduced Power with Power Transmission Lines for  

E-Print Network [OSTI]

Minimizing Simultaneous Switching Noise at Reduced Power with Power Transmission Lines for High] by replacing the power plane structure with a power transmission line (PTL). In this paper, a new power switching noise; power transmission line I. INTRODUCTION The rapid increase in data rates and transistor

Swaminathan, Madhavan

431

DOS -A Scalable Optical Switch for Datacenters xye@ucdavis.edu  

E-Print Network [OSTI]

DOS - A Scalable Optical Switch for Datacenters Xiaohui Ye xye@ucdavis.edu Paul Mejia pmmejia studies of Datacenter Optical Switch (DOS) designed for scalable and high- throughput interconnections System (OSMOSIS) [4, 5] and Data Vortex [6-8] are two pioneering projects in this area. DOS (Datacenter

Kolner, Brian H.

432

Impact of Photonic Switch Radix on Realizing Optical Interconnection Networks for Exascale Systems  

E-Print Network [OSTI]

power consumption. Several challenges still need to be addressed, for instance, achieving energy of programmability, resilience, power consumption and cost. Incremental evolutions of existing platforms may-stage architecture to obtain a virtual high port count switch, forming an indirect network. Alternatively, switches

Bergman, Keren

433

Group 3: Humidity, Temperature, and Voltage (Presentation)  

SciTech Connect (OSTI)

Group 3 is chartered to develop accelerated stress tests that can be used as comparative predictors of module lifetime versus stresses associated with humidity, temperature and voltage.

Wohlgemuth, J.

2013-05-01T23:59:59.000Z

434

Comparison of 3 Self-Starting Step-Up DC:DC Converter Topologies for Harvesting Energy from Low-Voltage and Low-Power Microbial Fuel Cells  

E-Print Network [OSTI]

-Voltage and Low-Power Microbial Fuel Cells Nicolas Degrenne1, Bruno Allard2, François Buret1, Florent Morel1.surname@ec-lyon.fr, 2firstname.surname@insa-lyon.fr Keywords «Fuel cell system», , «switched-mode power supply are made according to specifications issued from the stringent characteristics of microbial fuel cells

Paris-Sud XI, Université de

435

Ultrafast thermally induced magnetic switching in synthetic ferrimagnets  

SciTech Connect (OSTI)

Synthetic ferrimagnets are composite magnetic structures formed from two or more anti-ferromagnetically coupled magnetic sublattices with different magnetic moments. Here, we report on atomistic spin simulations of the laser-induced magnetization dynamics on such synthetic ferrimagnets and demonstrate that the application of ultrashort laser pulses leads to sub-picosecond magnetization dynamics and all-optical switching in a similar manner as in ferrimagnetic alloys. Moreover, we present the essential material properties for successful laser-induced switching, demonstrating the feasibility of using a synthetic ferrimagnet as a high density magnetic storage element without the need of a write field.

Evans, Richard F. L., E-mail: richard.evans@york.ac.uk; Ostler, Thomas A.; Chantrell, Roy W. [Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Radu, Ilie [Institut für Methoden und Instrumentierung der Forschung mit Synchrotronstrahlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Rasing, Theo [Radboud University, Institute for Molecules and Materials, Heyendaalsewg 135, 6525 AJ Nijmegen (Netherlands)

2014-02-24T23:59:59.000Z

436

Easily disassembled electrical connector for high voltage, high frequency connections  

DOE Patents [OSTI]

An easily accessible electrical connector capable of rapid assembly and disassembly is described wherein a wide metal conductor sheet may be evenly contacted over the entire width of the conductor sheet by opposing surfaces on the connector which provide an even clamping pressure against opposite surfaces of the metal conductor sheet using a single threaded actuating screw. 13 figures.

Milner, J.R.

1994-05-10T23:59:59.000Z

437

WDM Burst Switching for Petabit Data Networks Jonathan S. Turner  

E-Print Network [OSTI]

protocols, like IP. This paper briefly summarizes the operational principles of WDM burst switchingnetworks Principles. Burst switching systems assign user data bursts to channels in WDM links on-the-fly in order to provide efficient statistical multiplexing of high rate data channels. The transmission links in a burst

Turner, Jonathan S.

438

Capturing power at higher voltages from arrays of microbial fuel cells without voltage reversal  

E-Print Network [OSTI]

is too low to be used directly for many practical applications. For example, a single light emitting diode (LED) requires a minimum voltage of 2 V.2 Thus, effective methods of boosting MFC voltages

439

The Constant Voltage Transformer (CVT) for Mitigating Effects of Voltage Sags on Industrial Equipment  

E-Print Network [OSTI]

) an increase in loads that use power electronics in some type of power conversion configuration [1][2]. This paper presents applications of the constant-voltage transformer (CVT) for mitigating the effects of electric service voltage sags on industrial...

Ferraro, R. J.; Osborne, R.; Stephens, R.

440

Spark gap switch system with condensable dielectric gas  

DOE Patents [OSTI]

A spark gap switch system is disclosed which is capable of operating at a high pulse rate comprising an insulated switch housing having a purging gas entrance port and a gas exit port, a pair of spaced apart electrodes each having one end thereof within the housing and defining a spark gap therebetween, an easily condensable and preferably low molecular weight insulating gas flowing through the switch housing from the housing, a heat exchanger/condenser for condensing the insulating gas after it exits from the housing, a pump for recirculating the condensed insulating gas as a liquid back to the housing, and a heater exchanger/evaporator to vaporize at least a portion of the condensed insulating gas back into a vapor prior to flowing the insulating gas back into the housing.

Thayer, III, William J. (Kent, WA)

1991-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Voltage Collapse SimulationVoltage Collapse Simulation (Eastern Interconnection(Eastern Interconnection  

E-Print Network [OSTI]

PSERC Voltage Collapse SimulationVoltage Collapse Simulation (Eastern Interconnection(Eastern Interconnection Scenario)Scenario) Simulation Prepared by Dennis J. RaySimulation Prepared by Dennis J. Ray Interconnection based on a series of generator and line outages. An actual voltage collapse may not occur due

442

DESIGN AND IMPLEMENTATION OF A FUZZY LOGIC-BASED VOLTAGE CONTROLLER FOR VOLTAGE REGULATION  

E-Print Network [OSTI]

1 DESIGN AND IMPLEMENTATION OF A FUZZY LOGIC-BASED VOLTAGE CONTROLLER FOR VOLTAGE REGULATION In this paper the design and implementation of a fuzzy logic-based controller is described for regulating the output voltage of a synchronous generator. An automated fuzzy logic-based control strategy is presented

LaMeres, Brock J.

443

Optimal Power Flow Incorporating Voltage Collapse Constraints  

E-Print Network [OSTI]

Optimal Power Flow Incorporating Voltage Collapse Constraints William Rosehart Claudio Ca on the current operating con- ditions is presented. Second, an Optimal Power Flow formulation that incorporates: Voltage Collapse, Optimal Power Flow, Bifur- cations. I. Introduction As open-access market principles

Cañizares, Claudio A.

444

Voltage regulation in linear induction accelerators  

DOE Patents [OSTI]

Improvement in voltage regulation in a Linear Induction Accelerator wherein a varistor, such as a metal oxide varistor, is placed in parallel with the beam accelerating cavity and the magnetic core. The non-linear properties of the varistor result in a more stable voltage across the beam accelerating cavity than with a conventional compensating resistance.

Parsons, William M. (Santa Fe, NM)

1992-01-01T23:59:59.000Z

445

Voltage regulation in linear induction accelerators  

DOE Patents [OSTI]

Improvement in voltage regulation in a linear induction accelerator wherein a varistor, such as a metal oxide varistor, is placed in parallel with the beam accelerating cavity and the magnetic core is disclosed. The non-linear properties of the varistor result in a more stable voltage across the beam accelerating cavity than with a conventional compensating resistance. 4 figs.

Parsons, W.M.

1992-12-29T23:59:59.000Z

446

Switch for Good Community Program  

SciTech Connect (OSTI)

Switch4Good is an energy-savings program that helps residents reduce consumption from behavior changes; it was co-developed by Balfour Beatty Military Housing Management (BB) and WattzOn in Phase I of this grant. The program was offered at 11 Navy bases. Three customer engagement strategies were evaluated, and it was found that Digital Nudges (a combination of monthly consumption statements with frequent messaging via text or email) was most cost-effective.

Crawford, Tabitha; Amran, Martha

2013-11-19T23:59:59.000Z

447

Fast superconducting magnetic field switch  

DOE Patents [OSTI]

The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

Goren, Yehuda (Mountain View, CA); Mahale, Narayan K. (The Woodlands, TX)

1996-01-01T23:59:59.000Z

448

Non-contact current and voltage sensor  

SciTech Connect (OSTI)

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

2014-03-25T23:59:59.000Z

449

Flexible method for monitoring fuel cell voltage  

DOE Patents [OSTI]

A method for equalizing the measured voltage of each cluster in a fuel cell stack wherein at least one of the clusters has a different number of cells than the identical number of cells in the remaining clusters by creating a pseudo voltage for the different cell numbered cluster. The average cell voltage of the all of the cells in the fuel cell stack is calculated and multiplied by a constant equal to the difference in the number of cells in the identical cell clusters and the number of cells in the different numbered cell cluster. The resultant product is added to the actual voltage measured across the different numbered cell cluster to create a pseudo voltage which is equivalent in cell number to the number of cells in the other identical numbered cell clusters.

Mowery, Kenneth D. (Noblesville, IN); Ripley, Eugene V. (Russiaville, IN)

2002-01-01T23:59:59.000Z

450

Advanced High-Speed Framing Camera Development for Fast, Visible Imaging Experiments  

SciTech Connect (OSTI)

The advances in high-voltage switching developed in this project allow a camera user to rapidly vary the number of output frames from 1 to 25. A high-voltage, variable-amplitude pulse train shifts the deflection location to the new frame location during the interlude between frames, making multiple frame counts and locations possible. The final deflection circuit deflects to five different frame positions per axis, including the center position, making for a total of 25 frames. To create the preset voltages, electronically adjustable {+-}500 V power supplies were chosen. Digital-to-analog converters provide digital control of the supplies. The power supplies are clamped to {+-}400 V so as not to exceed the voltage ratings of the transistors. A field-programmable gated array (FPGA) receives the trigger signal and calculates the combination of plate voltages for each frame. The interframe time and number of frames are specified by the user, but are limited by the camera electronics. The variable-frame circuit shifts the plate voltages of the first frame to those of the second frame during the user-specified interframe time. Designed around an electrostatic image tube, a framing camera images the light present during each frame (at the photocathode) onto the tube’s phosphor. The phosphor persistence allows the camera to display multiple frames on the phosphor at one time. During this persistence, a CCD camera is triggered and the analog image is collected digitally. The tube functions by converting photons to electrons at the negatively charged photocathode. The electrons move quickly toward the more positive charge of the phosphor. Two sets of deflection plates skew the electron’s path in horizontal and vertical (x axis and y axis, respectively) directions. Hence, each frame’s electrons bombard the phosphor surface at a controlled location defined by the voltages on the deflection plates. To prevent the phosphor from being exposed between frames, the image tube is gated off between exposures.

Amy Lewis, Stuart Baker, Brian Cox, Abel Diaz, David Glass, Matthew Martin

2011-05-11T23:59:59.000Z

451

PH-315 A. La Rosa VOLTAGE-CONTROLLED OSCILLATOR  

E-Print Network [OSTI]

PH-315 A. La Rosa VOLTAGE-CONTROLLED OSCILLATOR 1. PURPOSE: An integrator and a Schmitt Trigger voltage; hence its name "voltage-controlled oscillator." 2. VOLTAGE-CONTROLLED OSCILLATOR Figure 1 shows voltage. An unusual feature of the circuit is its operation using a single positive supply.1 #12;- + 50k V

452

Electrically operated magnetic switch designed to display reduced leakage inductance  

DOE Patents [OSTI]

An electrically operated magnetic switch is disclosed herein for use in opening and closing a circuit between two terminals depending upon the voltage across these terminals. The switch so disclosed is comprised of a ferrite core in the shape of a toroid having opposing ends and opposite inner and outer sides and an arrangement of electrically conductive components defining at least one current flow path which makes a number of turns around the core. This arrangement of components includes a first plurality of electrically conducive rigid rods parallel with and located outside the outer side of the core and a second plurality of electrically conductive rigid rods parallel with and located inside the inner side of the core. The arrangement also includes means for electrically connecting these rods together so that the define the current flow path. In one embodiment, this latter means uses rigid cross-tab means. In another, preferred embodiment, printed circuits on rigid dielectric substrates located on opposite ends of the core are utilized to interconnect the rods together. 10 figures.

Cook, E.G.

1994-05-10T23:59:59.000Z

453

Electrically operated magnetic switch designed to display reduced leakage inductance  

DOE Patents [OSTI]

An electrically operated magnetic switch is disclosed herein for use in opening and closing a circuit between two terminals depending upon the voltage across these terminals. The switch so disclosed is comprised of a ferrite core in the shape of a toroid having opposing ends and opposite inner and outer sides and an arrangement of electrically conductive components defining at least one current flow path which makes a number of turns around the core. This arrangement of components includes a first plurality of electrically conducive rigid rods parallel with and located outside the outer side of the core and a second plurality of electrically conductive rigid rods parallel with and located inside the inner side of the core. The arrangement also includes means for electrically connecting these rods together so that the define the current flow path. In one embodiment, this latter means uses rigid cross-tab means. In another, preferred embodiment, printed circuits on rigid dielectric substrates located on opposite ends of the core are utilized to interconnect the rods together.

Cook, Edward G. (Livermore, CA)

1994-01-01T23:59:59.000Z

454

Fast 8 kV metal-oxide semiconductor field-effect transistor switch R. E. Continetti, D. R. Cyr,al and D. M. Neumarkb)  

E-Print Network [OSTI]

V. A key to this approach is the use of a metal-oxide varistor (MOV) to clamp the voltage acrossa givenFast 8 kV metal-oxide semiconductor field-effect transistor switch R. E. Continetti, D. R. Cyr transformer-isolatedpower metal-oxide semiconductor field-effect transistors in seriesis described

Neumark, Daniel M.

455

Real Power and Reactive Power Control of a Three-Phase Single-Stage-PV System and PV voltage Stability  

SciTech Connect (OSTI)

Grid-connected photovoltaic (PV) systems with power electronic interfaces can provide both real and reactive power to meet power system needs with appropriate control algorithms. This paper presents the control algorithm design for a three-phase single-stage grid-connected PV inverter to achieve either maximum power point tracking (MPPT) or a certain amount of real power injection, as well as the voltage/var control. The switching between MPPT control mode and a certain amount of real power control mode is automatic and seamless. Without the DC-to-DC booster stage, PV DC voltage stability is an important issue in the control design especially when the PV inverter is operating at maximum power point (MPP) with voltage/var control. The PV DC voltage collapse phenomenon and its reason are discussed. The method based on dynamic correction of the PV inverter output is proposed to ensure PV DC voltage stability. Simulation results of the single-stage PV system during system disturbances and fast solar irradiation changes confirm that the proposed control algorithm for single-stage PV inverters can provide appropriate real and reactive power services and ensure PV DC voltage stability during dynamic system operation and atmospheric conditions.

Li, Huijuan [ORNL] [ORNL; Xu, Yan [ORNL] [ORNL; Adhikari, Sarina [ORNL] [ORNL; Rizy, D Tom [ORNL] [ORNL; Li, Fangxing [ORNL] [ORNL; Irminger, Philip [ORNL] [ORNL

2012-01-01T23:59:59.000Z

456

Optical switching system and method  

DOE Patents [OSTI]

An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

Ranganathan, Radha (N. Tonawanda, NY); Gal, Michael (Engadine, AU); Taylor, P. Craig (Salt Lake City, UT)

1992-01-01T23:59:59.000Z

457

Voltage Management of Networks with Distributed Generation.   

E-Print Network [OSTI]

At present there is much debate about the impacts and benefits of increasing the amount of generation connected to the low voltage areas of the electricity distribution network. The UK government is under political ...

O'Donnell, James

2008-01-01T23:59:59.000Z

458

Bonfire-safe low-voltage detonator  

DOE Patents [OSTI]

A column of explosive in a low-voltage detonator which makes it bonfire-safe includes a first layer of an explosive charge of CP, or a primary explosive, and a second layer of a secondary organic explosive charge, such as PETN, which has a degradation temperature lower than the autoignition temperature of the CP or primary explosives. The first layer is composed of a pair of increments disposed in a bore of a housing of the detonator in an ignition region of the explosive column and adjacent to and in contact with an electrical ignition device at one end of the bore. The second layer is composed of a plurality of increments disposed in the housing bore in a transition region of the explosive column next to and in contact with the first layer on a side opposite from the ignition device. The first layer is loaded under a sufficient high pressure, 25 to 40 kpsi, to achieve ignition, whereas the second layer is loaded under a sufficient low pressure, about 10 kpsi, to allow occurrence of DDT. Each increment of the first and second layers has an axial length-to-diameter ratio of one-half.

Lieberman, Morton L. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

459

Bonfire-safe low-voltage detonator  

DOE Patents [OSTI]

A column of explosive in a low-voltage detonator which makes it bonfire-safe includes a first layer of an explosive charge of CP, or a primary explosive, and a second layer of a secondary organic explosive charge, such as PETN, which has a degradation temperature lower than the autoignition temperature of the CP or primary explosives. The first layer is composed of a pair of increments disposed in a bore of a housing of the detonator in an ignition region of the explosive column and adjacent to and in contact with an electrical ignition device at one end of the bore. The second layer is composed of a plurality of increments disposed in the housing bore in a transition region of the explosive column next to and in contact with the first layer on a side opposite from the ignition device. The first layer is loaded under a sufficient high pressure, 25 to 40 kpsi, to achieve ignition, whereas the second layer is loaded under a sufficient low pressure, about 10 kpsi, to allow occurrence of DDT. Each increment of the first and second layers has an axial length-to-diameter ratio of one-half. 2 figs.

Lieberman, M.L.

1988-07-01T23:59:59.000Z

460

A high ON/OFF ratio organic film for photo- and electro-dual-mode recording  

SciTech Connect (OSTI)

To improve the stability of organic multifunctional materials and enhance the ON/OFF ratio, a donor-{pi}-acceptor molecule with the triphenylamine (TPA) unit is designed and synthesized. The TPA unit can effectively stabilize the charge transferred state, and the thin film shows excellent bistable electronic switching behavior with high ON/OFF current ratio of about 10{sup 5}. Meanwhile, reversible and stable nanometer-scale data storage is realized on the thin film by applying pulsed voltages, and optical information storage is achieved simultaneously by utilizing fluorescence changes under UV irradiation.

Li Heng [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100083 (China); Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solid, Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Wen Yongqiang; Li Gang; Ma Ying; Yang Lianming; Song Yanlin; Zhu Daoben [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solid, Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Li Pengwei; Wang Rongming [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100083 (China); Yang Qinglin [School of Chemistry and Environment, Beijing University of Aeronautics and Astronautics, Beijing 100083 (China)

2009-04-20T23:59:59.000Z

Note: This page contains sample records for the topic "high voltage switches" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Group 3: Humidity, Temperature, and Voltage  

Broader source: Energy.gov [DOE]

This PowerPoint presentation, focused on humidity, temperature and voltage testing, was originally presented by John Wohlgemuth at the NREL 2013 PV Module Reliability Workshop on Feb. 26-27, 2013 in Denver, CO. It summarizes the activities of a working group chartered to develop accelerated stress tests that can be used as comparative predictors of module life versus stresses associated with humidity, temperature and voltage.

462

Addressing the Voltage Fade Issue with Lithium-Manganese-Rich...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Addressing the Voltage Fade Issue with Lithium-Manganese-Rich Oxide Cathode Materials Addressing the Voltage Fade Issue with Lithium-Manganese-Rich Oxide Cathode Materials 2013 DOE...

463

Addressing the Voltage Fade Issue with Lithium-Manganese-Rich...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Voltage Fade Issue with Lithium-Manganese-Rich Oxide Cathode Materials Addressing the Voltage Fade Issue with Lithium-Manganese-Rich Oxide Cathode Materials 2012 DOE Hydrogen and...

464

Differential ultrafast all-optical switching of the resonances of a micropillar cavity  

SciTech Connect (OSTI)

We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.

Thyrrestrup, Henri, E-mail: h.t.nielsen@utwente.nl; Yüce, Emre; Ctistis, Georgios; Vos, Willem L. [Complex Photonic Systems (COPS), MESA Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands); Claudon, Julien; Gérard, Jean-Michel, E-mail: jean-michel.gerard@cea.fr [University Grenoble Alpes, INAC-SP2M, Nanophysics and Semiconductors Lab, F-38000 Grenoble (France); CEA, INAC-SP2M, Nanophysics and Semiconductors Lab, F-38000 Grenoble (France)

2014-09-15T23:59:59.000Z

465

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof  

DOE Patents [OSTI]

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26T23:59:59.000Z

466

Synchronization of high speed framing camera and intense electron-beam accelerator  

SciTech Connect (OSTI)

A new trigger program is proposed to realize the synchronization of high speed framing camera (HSFC) and intense electron-beam accelerator (IEBA). The trigger program which include light signal acquisition radiated from main switch of IEBA and signal processing circuit could provide a trigger signal with rise time of 17 ns and amplitude of about 5 V. First, the light signal was collected by an avalanche photodiode (APD) module, and the delay time between the output voltage of APD and load voltage of IEBA was tested, it was about 35 ns. Subsequently, the output voltage of APD was processed further by the signal processing circuit to obtain the trigger signal. At last, by combining the trigger program with an IEBA, the trigger program operated stably, and a delay time of 30 ns between the trigger signal of HSFC and output voltage of IEBA was obtained. Meanwhile, when surface flashover occurred at the high density polyethylene sample, the delay time between the trigger signal of HSFC and flashover current was up to 150 ns, which satisfied the need of synchronization of HSFC and IEBA. So the experiment results proved that the trigger program could compensate the time (called compensated time) of the trigger signal processing time and the inherent delay time of the HSFC.

Cheng Xinbing; Liu Jinliang; Hong Zhiqiang; Qian Baoliang [College of Opto-electronic Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

2012-06-15T23:59:59.000Z

467

Seismic switch for strong motion measurement  

DOE Patents [OSTI]

A seismic switching device that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period.

Harben, Philip E. (Oakley, CA); Rodgers, Peter W. (Santa Barbara, CA); Ewert, Daniel W. (Patterson, CA)

1995-01-01T23:59:59.000Z

468

Seismic switch for strong motion measurement  

DOE Patents [OSTI]

A seismic switching device is described that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period. 11 figs.

Harben, P.E.; Rodgers, P.W.; Ewert, D.W.

1995-05-30T23:59:59.000Z

469

Optoelectronic switches based on diffusive conduction Hilmi Volkan Demira  

E-Print Network [OSTI]

Optoelectronic switches based on diffusive conduction Hilmi Volkan Demira and Fatih Hakan Koklu the process of diffusive conduction that we use in our optoelectronic switches to achieve rapid optical. We demonstrate the feasibility of using such diffusive conductive optoelectronic switches

Miller, David A. B.

470

Experimental Demonstration of End-to-End Message Passing for HPC systems through a Hybrid Optical Switch  

E-Print Network [OSTI]

optical switch and FPGAs emulating a High Performance Computing system. The experiment-driven simulation-latency message passing is critical to High Performance Computing (HPC) systems. The Message Passing Interface

Kolner, Brian H.

471

Hydrogen Bond Switching among Flavin and Amino Acid Side Chains in the BLUF Photoreceptor Observed by Ultrafast Infrared Spectroscopy  

E-Print Network [OSTI]

Hydrogen Bond Switching among Flavin and Amino Acid Side Chains in the BLUF Photoreceptor Observed hydrogen-bond network with nearby amino acid side chains, including a highly conserved tyrosine and glutamine. The participation of particular amino acid side chains in the ultrafast hydrogen-bond switching

van Stokkum, Ivo

472

LM231A/LM231/LM331A/LM331 Precision Voltage-to-Frequency Converters  

E-Print Network [OSTI]

LM231A/LM231/LM331A/LM331 Precision Voltage-to-Frequency Converters General Description The LM231/LM331 family of voltage-to-frequency converters are ideally suited for use in simple low, the LM231A/LM331A attain a new high level of accuracy versus temperature which could only be at- tained

Lanterman, Aaron

473

Flipping the switch on magnetism in strontium titanate  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Flipping the switch on magnetism in strontium titanate Flipping the switch on magnetism in strontium titanate Researchers have found a way to magnetize this material using light,...

474

Switch on Clean Energy Activity Book | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Switch on Clean Energy Activity Book Switch on Clean Energy Activity Book Games and activity book about energy efficiency and renewable energy technologies for kids....