National Library of Energy BETA

Sample records for high voltage switches

  1. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, John P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

  2. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, J.P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

  3. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  4. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  5. HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

    DOE Patents [OSTI]

    Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

    1962-04-17

    A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

  6. Compact high voltage solid state switch

    DOE Patents [OSTI]

    Glidden, Steven C.

    2003-09-23

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  7. Optically triggered high voltage switch network and method for switching a high voltage

    DOE Patents [OSTI]

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  8. High voltage switches having one or more floating conductor layers

    DOE Patents [OSTI]

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  9. High voltage switch triggered by a laser-photocathode subsystem

    DOE Patents [OSTI]

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  10. Optically initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.; Sanders; David M.

    2011-02-22

    An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  11. High voltage photo switch package module

    DOE Patents [OSTI]

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  12. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  13. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  14. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  15. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  16. Ultrashort pulse laser-triggering of long gap high voltage switches...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Ultrashort pulse laser-triggering of long gap high voltage switches. Citation Details In-Document Search Title: Ultrashort pulse laser-triggering of long gap high ...

  17. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOE Patents [OSTI]

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  18. Ultrashort pulse laser-triggering of long gap high voltage switches.

    Office of Scientific and Technical Information (OSTI)

    (Technical Report) | SciTech Connect Technical Report: Ultrashort pulse laser-triggering of long gap high voltage switches. Citation Details In-Document Search Title: Ultrashort pulse laser-triggering of long gap high voltage switches. Authors: Rambo, Patrick K. ; Schwarz, Jens ; Kimmel, Mark W. ; Van Tassle, Aaron J. ; Urayama, Junji ; Welch, Dale Robert [1] ; Rose, David V. [1] ; Thoma, Carsten [1] ; Clark, Robert E. [1] ; Miller, Craig [1] ; Zimmerman, William R. [1] ; Pitts, Todd Alan ;

  19. Optically-initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.; Sanders, David M.

    2012-02-28

    An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  20. High PRF high current switch

    DOE Patents [OSTI]

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  1. High voltage pulse conditioning

    DOE Patents [OSTI]

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  2. Fast switching, modular high-voltage DC/AC-power supplies for RF-Amplifiers and other applications

    SciTech Connect (OSTI)

    Alex, J.; Schminke, W. [Thomcast AG, Turgi (Switzerland)

    1995-12-31

    A new kind of high voltage high-power Pulse-Step Modulator (PSM) for broadcast transmitters, accelerator sources, for NBI (Neutral Beam Injection for Plasma Heating), gyrotrons and klystrons has been developed. Since its first introduction in 1984 for broadcast transmitters, more than 100 high-power sound broadcast transmitters had been equipped with the first generation of the PSM modulators, using Gate Turn-Off Thyristors (GTOs) as switching elements. Recently, due to faster switching elements and making use of the latest DSP technologies (Digital Signal Processing), the performance data and areas of application could be extended further. In 1994, a precision high voltage source for MW gyrotrons was installed at CRPP in Lausanne. Supplementary very low cost solutions for lower powers but high voltages had been developed. Hence, today, a large area of applications can be satisfied with the family of solutions. The paper describes the principle of operation, the related control systems and refers to some particular applications of the PSM amplifiers, especially the newest developments and corresponding field results.

  3. HIGH VOLTAGE GENERATOR

    DOE Patents [OSTI]

    Schwemin, A.J.

    1959-03-17

    A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  4. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

    DOE Patents [OSTI]

    Sullivan, James S.; Hawkins, Steven A.

    2012-09-04

    An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

  5. High voltage photo-switch package module having encapsulation with profiled metallized concavities

    DOE Patents [OSTI]

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen A

    2015-05-05

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.

  6. High voltage pulse generator

    DOE Patents [OSTI]

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  7. Low power, scalable multichannel high voltage controller

    DOE Patents [OSTI]

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2008-03-25

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  8. Low power, scalable multichannel high voltage controller

    DOE Patents [OSTI]

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2006-03-14

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  9. HIGH VOLTAGE GENERATOR

    DOE Patents [OSTI]

    Zito, G.V.

    1959-04-21

    This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

  10. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  11. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    DOE Patents [OSTI]

    Caporaso, G.J.; Sampayan, S.E.; Kirbie, H.C.

    1998-10-13

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 12 figs.

  12. High voltage variable diameter insulator

    DOE Patents [OSTI]

    Vanacek, D.L.; Pike, C.D.

    1982-07-13

    A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

  13. High Voltage Connector

    SciTech Connect (OSTI)

    Kurita, C.H.; /Fermilab

    1987-03-06

    The originally designed high voltage connectors were to be made of brass. However, if treated like a Bellevile spring with the initially given dimensions, the stresses of the connector when crimped were calculated to be much higher than the yield stress of brass. Since the flange and outer diameters of the connector are to remain small, it was necessary to alter the other dimensions and choice of material in order to bring down the stresses applied to the connector.

  14. HIGH VOLTAGE ION SOURCE

    DOE Patents [OSTI]

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  15. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  16. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  17. APPARATUS FOR REGULATING HIGH VOLTAGE

    DOE Patents [OSTI]

    Morrison, K.G.

    1951-03-20

    This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

  18. High voltage variable diameter insulator

    DOE Patents [OSTI]

    Vanecek, David L.; Pike, Chester D.

    1984-01-01

    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  19. High voltage feedthrough bushing

    DOE Patents [OSTI]

    Brucker, John P.

    1993-01-01

    A feedthrough bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  20. Temperature controlled high voltage regulator

    DOE Patents [OSTI]

    Chiaro, Jr., Peter J. (Clinton, TN); Schulze, Gerald K. (Knoxville, TN)

    2004-04-20

    A temperature controlled high voltage regulator for automatically adjusting the high voltage applied to a radiation detector is described. The regulator is a solid state device that is independent of the attached radiation detector, enabling the regulator to be used by various models of radiation detectors, such as gas flow proportional radiation detectors.

  1. Ultra-compact Marx-type high-voltage generator

    DOE Patents [OSTI]

    Goerz, David A.; Wilson, Michael J.

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  2. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    SciTech Connect (OSTI)

    Sharath, S. U. Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.

    2014-08-18

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3?V is observed up to 200?nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  3. High voltage pulse generator. [Patent application

    DOE Patents [OSTI]

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  4. High voltage photovoltaic power converter

    DOE Patents [OSTI]

    Haigh, Ronald E.; Wojtczuk, Steve; Jacobson, Gerard F.; Hagans, Karla G.

    2001-01-01

    An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

  5. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    DOE Patents [OSTI]

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  6. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, R.J.

    1996-10-22

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

  7. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, Rodney J.

    1996-01-01

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

  8. High voltage RF feedthrough bushing

    DOE Patents [OSTI]

    Grotz, Glenn F. (Huntington Station, NY)

    1984-01-01

    Described is a multi-element, high voltage radio frequency bushing for trmitting RF energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

  9. High voltage feed through bushing

    DOE Patents [OSTI]

    Brucker, J.P.

    1993-04-06

    A feed through bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  10. High voltage load resistor array

    DOE Patents [OSTI]

    Lehmann, Monty Ray

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  11. High voltage electrical amplifier having a short rise time

    DOE Patents [OSTI]

    Christie, David J.; Dallum, Gregory E.

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  12. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  13. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  14. High-voltage crowbar protection for the large CDF axial drift chamber

    SciTech Connect (OSTI)

    Binkley, M.; Mukherjee, A.; Stuermer, W.; Wagner, R.L.; /Fermilab

    2004-01-01

    The Central Outer Tracker (COT) is a big cylindrical drift chamber that provides charged particle tracking for the Collider Detector at Fermilab experiment. To protect the COT, the large stored energy in the high voltage system needs to be removed quickly when a problem is sensed. For the high voltage switch, a special-order silicon-controlled-rectifier was chosen over more readily available integrated gate bipolar transistors because of layout and reliability questions. The considerations concerning the high voltage switch, the prototype performance, and the experience of more than two years of running are described.

  15. Hybrid switch for resonant power converters

    DOE Patents [OSTI]

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  16. High Temperature, High Voltage Fully Integrated Gate Driver Circuit...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    D.C. PDF icon ape003tolbert2010p.pdf More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Wide Bandgap Materials Smart ...

  17. High Temperature, High Voltage Fully Integrated Gate Driver Circuit...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    -- Washington D.C. PDF icon ape03marlino.pdf More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Smart Integrated Power Module ...

  18. High-voltage crowbar circuit with cascade-triggered series ignitrons

    DOE Patents [OSTI]

    Baker, W.R.

    A series string of ignitrons for switching a large current at high voltage to ground is discussed. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

  19. High-voltage crowbar circuit with cascade-triggered series ignitrons

    DOE Patents [OSTI]

    Baker, William R. [Orinda, CA

    1980-11-04

    A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

  20. High-voltage crowbar circuit with cascade-triggered series ignitrons

    DOE Patents [OSTI]

    Baker, W.R.

    1980-11-04

    A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors. 1 fig.

  1. Electro-optic high voltage sensor

    DOE Patents [OSTI]

    Davidson, James R.; Seifert, Gary D.

    2003-09-16

    A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

  2. High-voltage miniature igniter development

    SciTech Connect (OSTI)

    Willkens, C.A.; Axelson, S.R.; Bateman, L.S.; Croucher, D.D.

    1996-09-01

    In 1988, Norton introduced its line of low-voltage 12- and 24-V miniature igniters made from a patented ceramic/intermetallic material. These igniters demonstrated superior strength and speed in a compact low-wattage assembly for gas-fired ignition. High-voltage igniters are being developed to complete the family of igniters for gas-fired ignition. These igniters have extremely low power requirements in the range of 50--100 W, are designed to operate at line voltages of 120 V, and are leading to designs for operation up to 230 V. These were developed using compositional and dimensional changes to the low voltage igniters. The 120 V igniter has exceeded 200,000 cycles in life testing and has been submitted for agency approval. These igniters are also undergoing field testing in various demanding gas-fired appliances. The evolution of the low-voltage igniter into the high-voltage model, as well as performance and material development issues are discussed.

  3. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Broader source: Energy.gov (indexed) [DOE]

    More Documents & Publications High-Voltage Solid Polymer Batteries for Electric Drive Vehicles Vehicle Technologies Office Merit Review 2014: High-Voltage Solid Polymer Batteries ...

  4. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles Citation Details In-Document Search Title: High-Voltage Solid Polymer Batteries for Electric ...

  5. Principles of ground relaying for high voltage and extra high voltage transmission lines

    SciTech Connect (OSTI)

    Griffin, C.H.

    1983-02-01

    This paper is a tutorial discussion of the basic principles of ground relaying for high voltage and extra high voltage transmission lines. Three different HV configurations are considered: Long lines, lines with a weak mid-point station, and mutually-coupled lines. Application criteria for EHV circuits are also discussed, and specific setting calculations are included where appropriate.

  6. Modular high voltage power supply for chemical analysis

    DOE Patents [OSTI]

    Stamps, James F.; Yee, Daniel D.

    2007-01-09

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  7. Modular high voltage power supply for chemical analysis

    DOE Patents [OSTI]

    Stamps, James F.; Yee, Daniel D.

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  8. Modular high voltage power supply for chemical analysis

    DOE Patents [OSTI]

    Stamps, James F.; Yee, Daniel D.

    2010-05-04

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  9. Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

    DOE Patents [OSTI]

    Ierna, W.F.

    1986-03-11

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  10. Cermet insert high voltage holdoff for ceramic/metal vacuum devices

    DOE Patents [OSTI]

    Ierna, William F.

    1987-01-01

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  11. Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

    SciTech Connect (OSTI)

    Baldacchini, Chiara; Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore

    2015-05-04

    Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

  12. Electro-optic high voltage sensor

    DOE Patents [OSTI]

    Davidson, James R.; Seifert, Gary D.

    2002-01-01

    A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

  13. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, P.J.; Tucker, T.J.

    1987-07-14

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed. 7 figs.

  14. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, Phillip J.; Tucker, Tillman J.

    1987-01-01

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

  15. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect (OSTI)

    2010-09-01

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  16. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Office of Scientific and Technical Information (OSTI)

    High-Voltage Solid Polymer Batteries for Electric Drive Vehicles Citation Details In-Document Search Title: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles The purpose ...

  17. High voltage supply for neutron tubes in well logging applications

    DOE Patents [OSTI]

    Humphreys, D. Russell

    1989-01-01

    A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  18. Lockout device for high voltage circuit breaker

    DOE Patents [OSTI]

    Kozlowski, L.J.; Shirey, L.A.

    1993-01-26

    An improved lockout assembly is provided for a circuit breaker to lock the switch handle into a selected switch position. The lockout assembly includes two main elements, each having a respective foot for engaging a portion of the upper housing wall of the circuit breaker. The first foot is inserted into a groove in the upper housing wall, and the second foot is inserted into an adjacent aperture (e.g., a slot) in the upper housing wall. The first foot is slid under and into engagement with a first portion, and the second foot is slid under and into engagement with a second portion of the upper housing wall. At the same time the respective two feet are placed in engagement with the respective portions of the upper housing wall, two holes, one on each of the respective two main elements of the assembly, are placed in registration; and a locking device, such as a special scissors equipped with a padlock, is installed through the registered holes to secure the lockout assembly on the circuit breaker. When the lockout assembly of the invention is secured on the circuit breaker, the switch handle of the circuit breaker is locked into the selected switch position and prevented from being switched to another switch position.

  19. Circuit for monitoring temperature of high-voltage equipment

    DOE Patents [OSTI]

    Jacobs, Martin E.

    1976-01-01

    This invention relates to an improved circuit for measuring temperature in a region at high electric potential and generating a read-out of the same in a region at lower potential. The circuit is specially designed to combine high sensitivity, stability, and accuracy. A major portion of the circuit situated in the high-potential region can take the form of an integrated circuit. The preferred form of the circuit includes an input section which is situated in the high-potential region and comprises a temperature-compensated thermocouple circuit for sensing temperature, an oscillator circuit for generating a train of ramp voltages whose rise time varies inversely with the thermocouple output, a comparator and switching circuit for converting the oscillator output to pulses whose frequency is proportional to the thermocouple output, and a light-emitting diode which is energized by these pulses. An optical coupling transmits the light pulses generated by the diode to an output section of the circuit, situated in a region at ground. The output section comprises means for converting the transmitted pulses to electrical pulses of corresponding frequency, means for amplifying the electrical pulses, and means for displaying the frequency of the same. The preferred embodiment of the overall circuit is designed so that the frequency of the output signal in hertz and tenths of hertz is equal to the sensed temperature in degrees and tenths of degrees.

  20. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, R.L.; Kirbie, H.C.; Newton, M.A.

    1998-06-30

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

  1. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, Robert L.; Kirbie, Hugh C.; Newton, Mark A.

    1998-01-01

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

  2. Nanoscale Morphological and Chemical Changes of High Voltage...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanoscale Morphological and Chemical Changes of High Voltage Lithium-Manganese Rich NMC ... must understand the evolution of chemical composition and morphology of battery ...

  3. Triggered plasma opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W.

    1988-01-01

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  4. Electrical system architecture having high voltage bus

    DOE Patents [OSTI]

    Hoff, Brian Douglas; Akasam, Sivaprasad

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  5. Remote switch actuator

    DOE Patents [OSTI]

    Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

    2013-01-29

    The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

  6. Living and Working Safely Around High-Voltage Power Lines.

    SciTech Connect (OSTI)

    United States. Bonneville Power Administration.

    2001-06-01

    High-voltage transmission lines can be just as safe as the electrical wiring in the homes--or just as dangerous. The crucial factor is ourselves: they must learn to behave safely around them. This booklet is a basic safety guide for those who live and work around power lines. It deals primarily with nuisance shocks due to induced voltages, and with potential electric shock hazards from contact with high-voltage lines. References on possible long-term biological effects of transmission lines are shown. In preparing this booklet, the Bonneville Power Administration has drawn on more than 50 years of experience with high-voltage transmission. BPA operates one of the world`s largest networks of long-distance, high-voltage lines. This system has more than 400 substations and about 15,000 miles of transmission lines, almost 4,400 miles of which are operated at 500,000 volts.

  7. Modeling Combustion Control for High Power Diesel Mode Switching...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Modeling Combustion Control for High Power Diesel Mode Switching Poster presentation given at the 16th Directions in Engine-Efficiency and Emissions Research (DEER) Conference in ...

  8. Optical fiber imaging for high speed plasma motion diagnostics: Applied to low voltage circuit breakers

    SciTech Connect (OSTI)

    McBride, J. W.; Balestrero, A.; Tribulato, G.; Ghezzi, L.; Cross, K. J.

    2010-05-15

    An integrated portable measurement system is described for the study of high speed and high temperature unsteady plasma flows such as those found in the vicinity of high current switching arcs. An array of optical fibers allows the formation of low spatial resolution images, with a maximum capture rate of 1x10{sup 6} images per second (1 MHz), with 8 bit intensity resolution. Novel software techniques are reported to allow imaging of the arc; and to measure arc trajectories. Results are presented on high current (2 kA) discharge events in a model test fixture and on the application to a commercial low voltage circuit breaker.

  9. High voltage bushing having weathershed and surrounding stress relief collar

    DOE Patents [OSTI]

    Cookson, Alan H.

    1981-01-01

    A high voltage electric bushing comprises a hollow elongated dielectric weathershed which encloses a high voltage conductor. A collar formed of high voltage dielectric material is positioned over the weathershed and is bonded thereto by an interface material which precludes moisture-like contaminants from entering between the bonded portions. The collar is substantially thicker than the adjacent weathershed which it surrounds, providing relief of the electric stresses which would otherwise appear on the outer surface of the weathershed. The collar may include a conductive ring or capacitive foil to further relieve electric stresses experienced by the bushing.

  10. Extremum seeking-based optimization of high voltage converter modulator rise-time

    SciTech Connect (OSTI)

    Scheinker, Alexander; Bland, Michael; Krstic, Miroslav; Audia, Jeff

    2013-02-01

    We digitally implement an extremum seeking (ES) algorithm, which optimizes the rise time of the output voltage of a high voltage converter modulator (HVCM) at the Los Alamos Neutron Science Center (LANSCE) HVCM test stand by iteratively, simultaneously tuning the first 8 switching edges of each of the three phase drive waveforms (24 variables total). We achieve a 50 ?s rise time, which is reduction in half compared to the 100 ?s achieved at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory. Considering that HVCMs typically operate with an output voltage of 100 kV, with a 60Hz repetition rate, the 50 ?s rise time reduction will result in very significant energy savings. The ES algorithm will prove successful, despite the noisy measurements and cost calculations, confirming the theoretical results that the algorithm is not affected by noise whose frequency components are independent of the perturbing frequencies.

  11. The commercial development of water repellent coatings for high voltage

    Office of Scientific and Technical Information (OSTI)

    transmission lines (Technical Report) | SciTech Connect The commercial development of water repellent coatings for high voltage transmission lines Citation Details In-Document Search Title: The commercial development of water repellent coatings for high voltage transmission lines The purpose of the Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC and Southwire Company was to jointly develop a low cost, commercially viable, water-repellant anti-icing coating

  12. Development of high-voltage pulse-slicer unit with variable pulse duration for pulse radiolysis system

    SciTech Connect (OSTI)

    Upadhyay, J.; Sharma, M. L.; Navathe, C. P.; Toley, M. A.; Shinde, S. J.; Nadkarni, S. A.; Sarkar, S. K.

    2012-02-15

    A high-voltage pulse-slicer unit with variable pulse duration has been developed and integrated with a 7 MeV linear electron accelerator (LINAC) for pulse radiolysis investigation. The pulse-slicer unit provides switching voltage from 1 kV to 10 kV with rise time better than 5 ns. Two MOSFET based 10 kV switches were configured in differential mode to get variable duration pulses. The high-voltage pulse has been applied to the deflecting plates of the LINAC for slicing of electron beam of 2 {mu}s duration. The duration of the electron beam has been varied from 30 ns to 2 {mu}s with the optimized pulse amplitude of 7 kV to get corresponding radiation doses from 6 Gy to 167 Gy.

  13. Design & Fabrication of a High-Voltage Photovoltaic Cell

    SciTech Connect (OSTI)

    Felder, Jennifer; /North Carolina State U. /SLAC

    2012-09-05

    Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

  14. The progress of funnelling gun high voltage condition and beam test

    SciTech Connect (OSTI)

    Wang, E.; Ben-Zvi, I.; Gassner, D. M.; Lambiase, R.; Meng, W.; Rahman, O.; Pikin, A.; Rao, T.; Sheehy, B.; Skaritka, J.; Pietz, J.; Ackeret, M.; Yeckel, C.; Miller, R.; Dobrin, E.; Thompson, K.

    2015-05-03

    A prototype of a high average current polarized electron funneling gun as an eRHIC injector has been built at BNL. The gun was assembled and tested at Stangenes Incorporated. Two beams were generated from two GaAs photocathodes and combined by a switched combiner field. We observed the combined beams on a YAG crystal and measured the photocurrent by a Faraday cup. The gun has been shipped to Stony Brook University and is being tested there. In this paper we will describe the major components of the gun and recent beam test results. High voltage conditioning is discussed as well.

  15. High voltage series connected tandem junction solar battery

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  16. Gaseous insulators for high voltage electrical equipment

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); James, David R. (Knoxville, TN); Pace, Marshall O. (Knoxville, TN); Pai, Robert Y. (Concord, TN)

    1981-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  17. The design, construction, and operation of long-distance high-voltage electricity transmission technologies.

    SciTech Connect (OSTI)

    Molburg, J. C.; Kavicky, J. A.; Picel, K. C.

    2008-03-03

    This report focuses on transmission lines, which operate at voltages of 115 kV and higher. Currently, the highest voltage lines comprising the North American power grid are at 765 kV. The grid is the network of transmission lines that interconnect most large power plants on the North American continent. One transmission line at this high voltage was built near Chicago as part of the interconnection for three large nuclear power plants southwest of the city. Lines at this voltage also serve markets in New York and New England, also very high demand regions. The large power transfers along the West Coast are generally at 230 or 500 kV. Just as there are practical limits to centralization of power production, there are practical limits to increasing line voltage. As voltage increases, the height of the supporting towers, the size of the insulators, the distance between conductors on a tower, and even the width of the right-of-way (ROW) required increase. These design features safely isolate the electric power, which has an increasing tendency to arc to ground as the voltage (or electrical potential) increases. In addition, very high voltages (345 kV and above) are subject to corona losses. These losses are a result of ionization of the atmosphere, and can amount to several megawatts of wasted power. Furthermore, they are a local nuisance to radio transmission and can produce a noticeable hum. Centralized power production has advantages of economies of scale and special resource availability (for instance, hydro resources), but centralized power requires long-distance transfers of power both to reach customers and to provide interconnections for reliability. Long distances are most economically served at high voltages, which require large-scale equipment and impose a substantial footprint on the corridors through which power passes. The most visible components of the transmission system are the conductors that provide paths for the power and the towers that keep these conductors at a safe distance from each other and from the ground and the natural and built environment. Common elements that are generally less visible (or at least more easily overlooked) include the maintained ROW along the path of the towers, access roads needed for maintenance, and staging areas used for initial construction that may be restored after construction is complete. Also visible but less common elements along the corridor may include switching stations or substations, where lines of similar or different voltages meet to transfer power.

  18. A design for a high voltage magnet coil ringer test set

    SciTech Connect (OSTI)

    Koska, W. ); Sims, R.E. )

    1992-04-01

    By discharging a bank of charged capacitors through a high power SCR switch into an SSC dipole magnet assembly, it is possible to ring'' the coil and develop a voltage stress of greater than 50 volts turn-to-turn, thereby verifying the insulation integrity. We will present an overview of the test set design for a 2 kV isolated SCR firing circuit, including safety features, selectable capacitor banks, and digital waveform storage system. Results from testing typical coils and magnets will be included. Possible upgrades are also discussed.

  19. A design for a high voltage magnet coil ringer test set

    SciTech Connect (OSTI)

    Koska, W.; Sims, R.E.

    1992-04-01

    By discharging a bank of charged capacitors through a high power SCR switch into an SSC dipole magnet assembly, it is possible to ``ring`` the coil and develop a voltage stress of greater than 50 volts turn-to-turn, thereby verifying the insulation integrity. We will present an overview of the test set design for a 2 kV isolated SCR firing circuit, including safety features, selectable capacitor banks, and digital waveform storage system. Results from testing typical coils and magnets will be included. Possible upgrades are also discussed.

  20. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect (OSTI)

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  1. Switch wear leveling

    DOE Patents [OSTI]

    Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

    2015-09-01

    An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

  2. MEDIUM VOLTAGE INTEGRATED DRIVE AND MOTOR

    Broader source: Energy.gov [DOE]

    Calnetix Technologies – Cerritos, CA This project will focus on integrating a high voltage SiC device with advanced high-speed machine technology, medium voltage stators, high efficiency magnetic bearings and sensor high frequency drive technology that can work directly with high voltages, switch at high frequencies for low machine losses, and do so very efficiently. The new medium voltage motors are expected to achieve up to eight times the power density of similar traditional systems. Fact sheet coming soon.

  3. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  4. High voltage gas insulated transmission line with continuous particle trapping

    DOE Patents [OSTI]

    Cookson, Alan H. (Pittsburgh, PA); Dale, Steinar J. (Monroeville, PA)

    1983-01-01

    This invention provides a novel high voltage gas insulated transmission line utilizing insulating supports spaced at intervals with snap-in means for supporting a continuous trapping apparatus and said trapping apparatus having perforations and cutouts to facilitate trapping of contaminating particles and system flexibility.

  5. High-voltage compatible, full-depleted CCD

    DOE Patents [OSTI]

    Holland, Stephen Edward

    2007-09-18

    A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

  6. FERROELECTRIC SWITCH FOR A HIGH-POWER Ka-BAND ACTIVE PULSE COMPRESSOR

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  7. Nanoscale Morphological and Chemical Changes of High Voltage

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lithium-Manganese Rich NMC Composite Cathodes with Cycling | Stanford Synchrotron Radiation Lightsource Nanoscale Morphological and Chemical Changes of High Voltage Lithium-Manganese Rich NMC Composite Cathodes with Cycling Friday, August 29, 2014 Renewable energy is critical for the future of humankind. One bottleneck is energy storage because the harvest and consumption of energy are typically separated in time and/or location. Hence, efficient, low-cost, safe and durable batteries are

  8. Fiber optic current monitor for high-voltage applications

    DOE Patents [OSTI]

    Renda, G.F.

    1992-04-21

    A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time. 6 figs.

  9. Fiber optic current monitor for high-voltage applications

    DOE Patents [OSTI]

    Renda, George F.

    1992-01-01

    A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time.

  10. Extremum seeking-based optimization of high voltage converter modulator rise-time

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Scheinker, Alexander; Bland, Michael; Krstic, Miroslav; Audia, Jeff

    2013-02-01

    We digitally implement an extremum seeking (ES) algorithm, which optimizes the rise time of the output voltage of a high voltage converter modulator (HVCM) at the Los Alamos Neutron Science Center (LANSCE) HVCM test stand by iteratively, simultaneously tuning the first 8 switching edges of each of the three phase drive waveforms (24 variables total). We achieve a 50 μs rise time, which is reduction in half compared to the 100 μs achieved at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory. Considering that HVCMs typically operate with an output voltage of 100 kV, with a 60Hz repetitionmore » rate, the 50 μs rise time reduction will result in very significant energy savings. The ES algorithm will prove successful, despite the noisy measurements and cost calculations, confirming the theoretical results that the algorithm is not affected by noise whose frequency components are independent of the perturbing frequencies.« less

  11. High voltage design structure for high temperature superconducting device

    DOE Patents [OSTI]

    Tekletsadik, Kasegn D.

    2008-05-20

    In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.

  12. Distribution System Voltage Performance Analysis for High-Penetration Photovoltaics

    SciTech Connect (OSTI)

    Liu, E.; Bebic, J.

    2008-02-01

    This report examines the performance of commonly used distribution voltage regulation methods under reverse power flow.

  13. Experimental validation of a high voltage pulse measurement method.

    SciTech Connect (OSTI)

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobate's (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps - 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensor's U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  14. Curing system for high voltage cross linked cables

    DOE Patents [OSTI]

    Bahder, George; Katz, Carlos; Bopp, Louis A.

    1978-01-01

    This invention makes extruded, vulcanized, high voltage cables insulated with thermosetting compounds at much higher rates of production and with superior insulation of reduced thickness and with reduced cavities or voids in the insulation. As the cable comes from an extruder, it passes into a curing chamber with a heat booster that quickly raises the insulation to a temperature at which it is cured much more quickly than with steam heating of the prior art. A high temperature liquid in contact with the insulation maintains the high temperature; and because of the greater curing heat, the cable can travel through the curing chamber at a faster rate and into a cooling tube where it contacts with a cooling liquid under high pressure. The insulation compound is treated to reduce the size of cavities; and the high pressure maintained by the curing and cooling mediums prevent expansion of cavities before the insulation is set.

  15. Vehicle Technologies Office Merit Review 2015: High-Voltage, High-Capacity Polyanion Cathodes

    Broader source: Energy.gov [DOE]

    Presentation given by U of Texas at Austin at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high-voltage, high...

  16. High-voltage R-F feedthrough bushing

    DOE Patents [OSTI]

    Grotz, G.F.

    1982-09-03

    Described is a multi-element, high voltage radio frequency bushing for transmitting rf energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

  17. Self-monitoring high voltage transmission line suspension insulator

    DOE Patents [OSTI]

    Stemler, Gary E. (Vancouver, WA); Scott, Donald N. (Vancouver, WA)

    1981-01-01

    A high voltage transmission line suspension insulator (18 or 22) which monitors its own dielectric integrity. A dielectric rod (10) has one larger diameter end fitting attachable to a transmission line and another larger diameter end fitting attachable to a support tower. The rod is enclosed in a dielectric tube (14) which is hermetically sealed to the rod's end fittings such that a liquidtight space (20) is formed between the rod and the tube. A pressurized dielectric liquid is placed within that space. A discoloring dye placed within this space is used to detect the loss of the pressurized liquid.

  18. Hazard classification assessment for the High Voltage Initiator

    SciTech Connect (OSTI)

    Cogan, J.D.

    1994-04-19

    An investigation was conducted to determine whether the High Voltage Initiator (Sandia p number 395710; Navy NAVSEA No. 6237177) could be assigned a Department of Transportation (DOT) hazard classification of ``IGNITERS, 1.4G, UN0325`` under Code of Federal Regulations, 49 CFR 173.101, when packaged per Mound drawing NXB911442. A hazard classification test was performed, and the test data led to a recommended hazard classification of ``IGNITERS, 1.4G, UN0325,`` based on guidance outlined in DOE Order 1540.2 and 49 CFR 173.56.

  19. An accurate continuous calibration system for high voltage current transformer

    SciTech Connect (OSTI)

    Tong Yue; Li Binhong

    2011-02-15

    A continuous calibration system for high voltage current transformers is presented in this paper. The sensor of this system is based on a kind of electronic instrument current transformer, which is a clamp-shape air core coil. This system uses an optical fiber transmission system for its signal transmission and power supply. Finally the digital integrator and fourth-order convolution window algorithm as error calculation methods are realized by the virtual instrument with a personal computer. It is found that this system can calibrate a high voltage current transformer while energized, which means avoiding a long calibrating period in the power system and the loss of power metering expense. At the same time, it has a wide dynamic range and frequency band, and it can achieve a high accuracy measurement in a complex electromagnetic field environment. The experimental results and the on-site operation results presented in the last part of the paper, prove that it can reach the 0.05 accuracy class and is easy to operate on site.

  20. Anode initiated surface flashover switch

    DOE Patents [OSTI]

    Brainard, John P.; Koss, Robert J.

    2003-04-29

    A high voltage surface flashover switch has a pair of electrodes spaced by an insulator. A high voltage is applied to an anode, which is smaller than the opposing, grounded, cathode. When a controllable source of electrons near the cathode is energized, the electrons are attracted to the anode where they reflect to the insulator and initiate anode to cathode breakdown.

  1. Electrolytes and Separators for High Voltage Li Ion Cells | Department of

    Broader source: Energy.gov (indexed) [DOE]

    Energy es100_angell_2011_o.pdf More Documents & Publications Electrolytes and Separators for High Voltage Li Ion Cells High Voltage Electrolyte for Lithium Batteries Linking Ion Solvation and Lithium Battery Electrolyte Properties

  2. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    SciTech Connect (OSTI)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  3. Active high-power RF switch and pulse compression system

    DOE Patents [OSTI]

    Tantawi, Sami G.; Ruth, Ronald D.; Zolotorev, Max

    1998-01-01

    A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

  4. SIC ENABLED HIGH-FREQUENCY MEDIUM VOLTAGE DRIVE FOR HIGH-SPEED...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    General Electric Company - Niskayuna, NY A medium voltage drive system using SiC semiconductors and a high-speed motor to reduce the system footprint and improve power density and ...

  5. Effect of current compliance and voltage sweep rate on the resistive switching of HfO{sub 2}/ITO/Invar structure as measured by conductive atomic force microscopy

    SciTech Connect (OSTI)

    Wu, You-Lin Liao, Chun-Wei; Ling, Jing-Jenn

    2014-06-16

    The electrical characterization of HfO{sub 2}/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO{sub 2} surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO{sub 2}/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  6. High-Voltage Broadband-Over-Powerline (HV-BPL) Field Test Report...

    Open Energy Info (EERE)

    Voltage Broadband-Over-Powerline (HV-BPL) Field Test Report Jump to: navigation, search Tool Summary LAUNCH TOOL Name: High-Voltage Broadband-Over-Powerline (HV-BPL) Field Test...

  7. Monolithic high voltage nonlinear transmission line fabrication process

    DOE Patents [OSTI]

    Cooper, G.A.

    1994-10-04

    A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

  8. Monolithic high voltage nonlinear transmission line fabrication process

    DOE Patents [OSTI]

    Cooper, Gregory A.

    1994-01-01

    A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

  9. Plasma Switch for High-Power Active Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-11-04

    Results are presented from experiments carried out at the Naval Research Laboratory X-band magnicon facility on a two-channel X-band active RF pulse compressor that employed plasma switches. Experimental evidence is shown to validate the basic goals of the project, which include: simultaneous firing of plasma switches in both channels of the RF circuit, operation of quasi-optical 3-dB hybrid directional coupler coherent superposition of RF compressed pulses from both channels, and operation of the X-band magnicon directly in the RF pulse compressor. For incident 1.2 ?s pulses in the range 0.63 ? 1.35 MW, compressed pulses of peak powers 5.7 ? 11.3 MW were obtained, corresponding to peak power gain ratios of 8.3 ? 9.3. Insufficient bakeout and conditioning of the high-power RF circuit prevented experiments from being conducted at higher RF input power levels.

  10. High-voltage supply for neutron tubes in well-logging applications

    DOE Patents [OSTI]

    Humphreys, D.R.

    1982-09-15

    A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  11. Voltage controlled current source

    DOE Patents [OSTI]

    Casne, Gregory M.

    1992-01-01

    A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

  12. High voltage power supply with modular series resonant inverters

    DOE Patents [OSTI]

    Dreifuerst, Gary R.; Merritt, Bernard T.

    1995-01-01

    A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360.degree./n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit.

  13. High voltage power supply with modular series resonant inverters

    DOE Patents [OSTI]

    Dreifuerst, G.R.; Merritt, B.T.

    1995-07-18

    A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360{degree}/n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit. 11 figs.

  14. Transparent ceramic photo-optical semiconductor high power switches

    DOE Patents [OSTI]

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  15. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Office of Scientific and Technical Information (OSTI)

    Voltage Solid Polymer Batteries for Electric Drive Vehicles Eitouni, Hany; Yang, Jin; Pratt, Russell; Wang, Xiao; Grape, Ulrik The purpose of this project was for Seeo to develop a...

  16. Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

    SciTech Connect (OSTI)

    Maxson, Jared; Bazarov, Ivan; Dunham, Bruce; Dobbins, John; Liu, Xianghong; Smolenski, Karl

    2014-09-15

    A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. These results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.

  17. RF-MEMS capacitive switches with high reliability

    DOE Patents [OSTI]

    Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

    2013-09-03

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

  18. Method and apparatus for connecting high voltage leads to a high temperature super-conducting transformer

    DOE Patents [OSTI]

    Golner, Thomas M.; Mehta, Shirish P.

    2005-07-26

    A method and apparatus for connecting high voltage leads to a super-conducting transformer is provided that includes a first super-conducting coil set, a second super-conducting coil set, and a third super-conducting coil set. The first, second and third super-conducting coil sets are connected via an insulated interconnect system that includes insulated conductors and insulated connectors that are utilized to connect the first, second, and third super-conducting coil sets to the high voltage leads.

  19. High power impulse magnetron sputtering: Current-voltage-timecharacteristics indicate the onset of sustained self-sputtering

    SciTech Connect (OSTI)

    Anders, Andre; Andersson, Joakim; Ehiasarian, Arutiun

    2007-08-03

    The commonly used current-voltage characteristics are foundinadequate for describing the pulsed nature of the high power impulsemagnetron sputtering (HIPIMS) discharge, rather, the description needs tobe expanded to current-voltage-time characteristics for each initial gaspressure. Using different target materials (Cu, Ti, Nb, C, W, Al, Cr) anda pulsed constant-voltage supply it is shown that the HIPIMS dischargestypically exhibit an initial pressure dependent current peak followed bya second phase that is power and material dependent. This suggests thatthe initial phase of a HIPIMS discharge pulse is dominated by gas ionswhereas the later phase has a strong contribution from self-sputtering.For some materials the discharge switches into a mode of sustainedself-sputtering. The very large differences between materials cannot beascribed to the different sputter yields but they indicate thatgeneration and trapping ofsecondary electrons plays a major role forcurrent-voltage-time characteristics. In particular, it is argued thatthe sustained self-sputtering phase is associated with thegeneration ofmultiply charged ions because only they can cause potential emission ofsecondary electrons whereas the yield caused by singly charged metal ionsis negligibly small.

  20. SIC ENABLED HIGH-FREQUENCY MEDIUM VOLTAGE DRIVE FOR HIGH-SPEED MOTORS

    Broader source: Energy.gov [DOE]

    General Electric Company – Niskayuna, NY A medium voltage drive system using SiC semiconductors and a high-speed motor to reduce the system footprint and improve power density and efficiency will be developed and demonstrated. To achieve these targets, the program will focus on three technology areas: (i) SiC-based MV high frequency drive, (ii) a high-speed motor, and (iii) advanced insulation systems. Fact sheet coming soon.

  1. Radio-frequency powered glow discharge device and method with high voltage interface

    DOE Patents [OSTI]

    Duckworth, D.C.; Marcus, R.K.; Donohue, D.L.; Lewis, T.A.

    1994-06-28

    A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components. 11 figures.

  2. Radio-frequency powered glow discharge device and method with high voltage interface

    DOE Patents [OSTI]

    Duckworth, Douglas C.; Marcus, R. Kenneth; Donohue, David L.; Lewis, Trousdale A.

    1994-01-01

    A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components.

  3. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOE Patents [OSTI]

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  4. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  5. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    DOE Patents [OSTI]

    Murty, Balarama Vempaty

    2000-01-01

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  6. Optical Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    seven wonders Optical Switch A key component in the laser chain, an optical switch called a plasma electrode Pockels cell (PEPC), was invented and developed at LLNL. A Pockels cell rotates the polarization of a laser beam when a voltage is applied across an electro-optic crystal. Depending on the voltage applied, the Pockels cell either allows light to pass through or to reflect off a polarizer, creating an optical switch. For each of NIF's 192 beamlines, a PEPC allows the laser pulse to make

  7. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, K.

    1983-08-09

    A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

  8. High-Voltage LED Light Engine with Integrated Driver | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Voltage LED Light Engine with Integrated Driver High-Voltage LED Light Engine with Integrated Driver Lead Performer: Lumileds, LLC - San Jose, CA DOE Total Funding: $1,499,346 Cost Share: $499,783 Project Term: 9/1/2014 - 2/29/2016 Funding Opportunity: SSL R&D Funding Opportunity Announcement (FOA) (DE-FOA-0000973) Project Objective This project will develop a high-voltage light engine integrating low-cost, high-power patterned sapphire substrate flip-chip (PSS-FC) architecture LEDs with

  9. Triple voltage dc-to-dc converter and method

    DOE Patents [OSTI]

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  10. Vehicle Technologies Office Merit Review 2014: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles

    Broader source: Energy.gov [DOE]

    Presentation given by Seeo, Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high-voltage solid polymer...

  11. ANUEADflM-31 Electric Power High-Voltage Transmission Lines:

    Office of Scientific and Technical Information (OSTI)

    ... design options to reduce human exposure to EMFs from high-voltage transmission lines. ... assumed for the 345-kV designs: 150-R rights-of-way for overhead lines, 50-ft ...

  12. Spontaneous aggregation of lithium ion coordination polymers in fluorinated electrolytes for high-voltage batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Malliakas, Christos D.; Leung, Kevin; Pupek, Krzysztof Z.; Shkrob, Ilya A.; Abraham, Daniel P.

    2016-03-31

    Fluorinated carbonate solvents are pursued as liquid electrolytes for high-voltage Li-ion batteries. We report aggregation of [Li+(FEC)3]n polymer species from fluoroethylene carbonate containing electrolytes and scrutinized the causes for this behavior.

  13. Lumileds Develops High-Voltage LED Light Engine with Integrated Driver

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Lumileds has developed a high-voltage LED light engine with an integrated driver, achieving an efficacy greater than 128 lm/W at a luminous flux greater than 4,100 lm...

  14. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    SciTech Connect (OSTI)

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  15. Failure Mechanisms in High Voltage Mylar Capacitors. (Conference) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Conference: Failure Mechanisms in High Voltage Mylar Capacitors. Citation Details In-Document Search Title: Failure Mechanisms in High Voltage Mylar Capacitors. Abstract not provided. Authors: Herzberger, Jaemi Lee ; Tanner, Danelle Mary Publication Date: 2014-01-01 OSTI Identifier: 1140285 Report Number(s): SAND2014-0737C 498587 DOE Contract Number: DE-AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: (CARTS) Capacitor and Resistor Technology Symposium held

  16. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  17. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  18. Neutron burst form a high-voltage discharge between palladium electrodes in D sub 2 gas

    SciTech Connect (OSTI)

    Kim, Y.E. . Dept. of Physics)

    1990-12-01

    In this paper a recent experimental observation of a neutron flux burst at a rate of 2 {times} 10{sup 4} times the background rate during a high ac voltage stimulation between two deuterated palladium electrodes in D{sub 2} gas is explained in terms of the experimentally measured deuterium-deuterium (D-D) fusion cross sections. Theoretical criteria and experimental conditions for improving D-D fusion rates with the use of pulsed high-dc voltages are described.

  19. Princeton Power Systems (TRL 5 6 Component)- Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage

    Broader source: Energy.gov [DOE]

    Princeton Power Systems (TRL 5 6 Component) - Marine High-Voltage Power Conditioning and Transmission System with Integrated Energy Storage

  20. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect (OSTI)

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  1. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    SciTech Connect (OSTI)

    Sulaeman, M. Y.; Widita, R.

    2014-09-30

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of ?1.5 kV with falltime 3 ns and risetime 15 ns into a 50? load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  2. CREE: Making the Switch

    ScienceCinema (OSTI)

    Grider, David; Palmer, John

    2014-04-09

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  3. CREE: Making the Switch

    SciTech Connect (OSTI)

    Grider, David; Palmer, John

    2014-03-06

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  4. Non-aqueous electrolyte for high voltage rechargeable magnesium batteries

    DOE Patents [OSTI]

    Doe, Robert Ellis; Lane, George Hamilton; Jilek, Robert E; Hwang, Jaehee

    2015-02-10

    An electrolyte for use in electrochemical cells is provided. The properties of the electrolyte include high conductivity, high Coulombic efficiency, and an electrochemical window that can exceed 3.5 V vs. Mg/Mg.sup.+2. The use of the electrolyte promotes the electrochemical deposition and dissolution of Mg without the use of any Grignard reagents, other organometallic materials, tetraphenyl borate, or tetrachloroaluminate derived anions. Other Mg-containing electrolyte systems that are expected to be suitable for use in secondary batteries are also described.

  5. Demonstration of Magnesium Intercalation into a High-Voltage Oxide

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    | SciTech Connect Demonstration of LED Street Lighting in Kansas City, MO Citation Details In-Document Search Title: Demonstration of LED Street Lighting in Kansas City, MO Nine different streetlighting products were installed on various streets in Kansas City, Missouri during February, 2011, to evaluate their performance relative to the incumbent high-pressure sodium (HPS) lighting. The applications investigated included 100 W, 150 W, 250 W, and 400 W HPS installations. Initial measurements

  6. Dual design resistor for high voltage conditioning and transmission lines

    DOE Patents [OSTI]

    Siggins, Timothy Lynn; Murray, Charles W.; Walker, Richard L.

    2007-01-23

    A dual resistor for eliminating the requirement for two different value resistors. The dual resistor includes a conditioning resistor at a high resistance value and a run resistor at a low resistance value. The run resistor can travel inside the conditioning resistor. The run resistor is capable of being advanced by a drive assembly until an electrical path is completed through the run resistor thereby shorting out the conditioning resistor and allowing the lower resistance run resistor to take over as the current carrier.

  7. Method of making high breakdown voltage semiconductor device

    DOE Patents [OSTI]

    Arthur, Stephen D.; Temple, Victor A. K.

    1990-01-01

    A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

  8. Automatic voltage imbalance detector

    DOE Patents [OSTI]

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  9. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles (Technical

    Office of Scientific and Technical Information (OSTI)

    Report) | SciTech Connect Technical Report: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles Citation Details In-Document Search Title: High-Voltage Solid Polymer Batteries for Electric Drive Vehicles The purpose of this project was for Seeo to develop a high energy lithium based technology with targets of over 500 Wh/l and 325 Wh/kg. Seeo would leverage the work already achieved with its unique proprietary solid polymer DryLyteTM technology in cells which had a specific

  10. Utilizing zero-sequence switchings for reversible converters

    DOE Patents [OSTI]

    Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

    2004-12-14

    A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

  11. Connecting Renewables Directly to the Grid: Resilient Multi-Terminal HVDC Networks with High-Voltage High-Frequency Electronics

    SciTech Connect (OSTI)

    2012-01-23

    GENI Project: GE is developing electricity transmission hardware that could connect distributed renewable energy sources, like wind farms, directly to the grid—eliminating the need to feed the energy generated through intermediate power conversion stations before they enter the grid. GE is using the advanced semiconductor material silicon carbide (SiC) to conduct electricity through its transmission hardware because SiC can operate at higher voltage levels than semiconductors made out of other materials. This high-voltage capability is important because electricity must be converted to high-voltage levels before it can be sent along the grid’s network of transmission lines. Power companies do this because less electricity is lost along the lines when the voltage is high.

  12. Ultrashort pulse laser-triggering of long gap high voltage switches...

    Office of Scientific and Technical Information (OSTI)

    Close Cite: Bibtex Format Close 0 pages in this document matching the terms "" Search For Terms: Enter terms in the toolbar above to search the full text of this document for ...

  13. Switching power supply

    DOE Patents [OSTI]

    Mihalka, A.M.

    1984-06-05

    The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

  14. Static reactive power compensators for high-voltage power systems. Final report

    SciTech Connect (OSTI)

    Not Available

    1981-04-01

    A study conducted to summarize the role of static reactive power compensators for high voltage power system applications is described. This information should be useful to the utility system planning engineer in applying static var systems (SVS) to high voltage as (HVAC) systems. The static var system is defined as a form of reactive power compensator. The general need for reactive power compensation in HVAC systems is discussed, and the static var system is compared to other devices utilized to provide reactive power compensation. Examples are presented of applying SVS for specific functions, such as the prevention of voltage collapse. The operating principles of commercially available SVS's are discussed in detail. The perormance and active power loss characteristics of SVS types are compared.

  15. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, Kristian

    1983-01-01

    A switching system for delivering pulses of power from a source (10) to a load (20) using a storage capacitor (C3) charged through a rectifier (D1, D2), and maintained charged to a reference voltage level by a transistor switch (Q1) and voltage comparator (12). A thyristor (22) is triggered to discharge the storage capacitor through a saturable reactor (18) and fractional turn saturable transformer (16) having a secondary to primary turn ratio N of n:l/n=n.sup.2. The saturable reactor (18) functions as a "soaker" while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor (C4) charges, and then switches to a low impedance state to dump the charge of the storage capacitor (C3) into the load through the coupling capacitor (C4). The transformer is comprised of a multilayer core (26) having two secondary windings (28, 30) tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes (32, 34) for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe (40) for a linear particle accelerator and capacitance of a pulse forming network (42). To hold off discharge of the capacitance until it is fully charged, a saturable core (44) is provided around the resistive beampipe (40) to isolate the beampipe from the capacitance (42) until it is fully charged.

  16. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, R.S.

    1987-11-17

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile. 2 figs.

  17. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, R.S.

    1985-08-05

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  18. Low voltage arc formation in railguns

    DOE Patents [OSTI]

    Hawke, Ronald S.

    1987-01-01

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  19. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    SciTech Connect (OSTI)

    Patel, N.; Branch, D. W.; Cular, S.; Schamiloglu, E.

    2015-08-15

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO{sub 3}) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  20. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to bothmore »crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

  1. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to bothmore » crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

  2. Magnetic lens apparatus for a low-voltage high-resolution electron microscope

    DOE Patents [OSTI]

    Crewe, Albert V.

    1996-01-01

    A lens apparatus in which a beam of charged particles of low accelerating voltage is brought to a focus by a magnetic field, the lens being situated behind the target position. The lens comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. The lens apparatus comprises the sole focusing lens for high-resolution imaging in a low-voltage scanning electron microscope.

  3. A practical approach to accurate fault location on extra high voltage teed feeders

    SciTech Connect (OSTI)

    Aggarwal, R.K.; Coury, D.V.; Johns, A.T. . School of Electronic and Electrical Engineering); Kalam, A. )

    1993-07-01

    This paper describes the basis of an alternative approach for accurately locating faults on teed feeders and the technique developed utilizes fault voltages and currents at all three ends. The method is virtually independent of fault resistance and largely insensitive to variations in source impedance, teed and line configurations, including line untransposition. The paper presents the basic theory of the technique which is then extensively tested using simulated primary system voltage and current waveforms which in turn include the transducer/hardware errors encountered in practice. The performance clearly shows a high degree of accuracy attained.

  4. Device for monitoring cell voltage

    DOE Patents [OSTI]

    Doepke, Matthias; Eisermann, Henning

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  5. Use of Static Compensators for Voltage Control at 330- and 500-kV Substations

    SciTech Connect (OSTI)

    Dement'ev, Yu. A.; Kochkin, V. I.; Idiatullov, R. M.; Papafanasopulo, S. G.; Smirnov, A. A.; Smirnov, S. G.

    2003-05-15

    A scheme for compensating the reactive power and controlling the voltage of high-voltage, intermediate-voltage, and low-voltage buses of 330 - 500-kV substations, which consist of static thyristor compensators (STC) on low-voltage autotransformers and controlled shunting reactors on high-voltage lines, is presented. It is shown that the STC can be created step-by-step beginning with the reactive part on substations with low-loaded lines. Results of installation of reactor groups of STC stepwise-controlled by vacuum switches at 330- and 500-kV substations are presented. Tests of the reactor groups have proved their high efficiency.

  6. TiN coated aluminum electrodes for DC high voltage electron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

  7. TiN coated aluminum electrodes for DC high voltage electron guns

    SciTech Connect (OSTI)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-15

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  8. TiN coated aluminum electrodes for DC high voltage electron guns

    SciTech Connect (OSTI)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-05-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  9. THYRATRON SWITCH

    DOE Patents [OSTI]

    Creveling, R.; Bourgeois, N.A. Jr.

    1959-04-21

    An arrangement for utilizing a thyratron as a noise free switch is described. It has been discovered that the voltage between plate and cathode of a thyratron will oscillate, producing voltage spikes, if the tube carries only a fraction of its maximum rated current. These voltage spikes can produce detrimental effects where the thyratron is used in critical timing circuits. To alleviate this problem the disclosed circuit provides a charged capacitor and a resistor in parallel with the tube and of such value that the maximum current will flow from the capacitor through the thyratron when it is triggered. During this time the signal current is conducted through the tube, before the thyratron voltage starts to oscillate, and the signal current output is free of noise spikes.

  10. A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

    SciTech Connect (OSTI)

    None, None

    2012-01-31

    The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105?C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

  11. A high voltage pulse power supply for metal plasma immersion ion implantation and deposition

    SciTech Connect (OSTI)

    Salvadori, M. C.; Teixeira, F. S.; Araujo, W. W. R.; Sgubin, L. G.; Sochugov, N. S.; Spirin, R. E.; Brown, I. G.

    2010-12-15

    We describe the design and implementation of a high voltage pulse power supply (pulser) that supports the operation of a repetitively pulsed filtered vacuum arc plasma deposition facility in plasma immersion ion implantation and deposition (Mepiiid) mode. Negative pulses (micropulses) of up to 20 kV in magnitude and 20 A peak current are provided in gated pulse packets (macropulses) over a broad range of possible pulse width and duty cycle. Application of the system consisting of filtered vacuum arc and high voltage pulser is demonstrated by forming diamond-like carbon (DLC) thin films with and without substrate bias provided by the pulser. Significantly enhanced film/substrate adhesion is observed when the pulser is used to induce interface mixing between the DLC film and the underlying Si substrate.

  12. ANUEADflM-31 Electric Power High-Voltage Transmission Lines:

    Office of Scientific and Technical Information (OSTI)

    ANUEADflM-31 Electric Power High-Voltage Transmission Lines: Design Options, Cost, and Electric and Magnetic Field Levels by J.B. Stoffel,' E.D. Pentecost, R.D. Roman, and P.A. Traczyk Environmental Assessment Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 November 1994 Work sponsored by United States Department of Energy, Assistant Secretary for Fossil Energy, Office of Fuels Program Stoffel is affiliated with Argonne's Electronics and Computing

  13. Spintronic switches for ultra low energy global interconnects

    SciTech Connect (OSTI)

    Sharad, Mrigank Roy, Kaushik

    2014-05-07

    We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.

  14. Novel Nonflammable Electrolytes for Secondary Magnesium Batteries and High Voltage Electrolytes for Electrochemcial Supercapacitors

    SciTech Connect (OSTI)

    Dr. Brian Dixon

    2008-12-30

    Magnesium has been used successfully in primary batteries, but its use in rechargeable cells has been stymied by the lack of suitable non-aqueous electrolyte that can conduct Mg+2 species, combined with poor stripping and plating properties. The development of a suitable cathode material for rechargeable magnesium batteries has also been a roadblock, but a nonflammable electrolyte is key. Likewise, the development of safe high voltage electrochemical supercapaitors has been stymied by the use of flammable solvents in the liquid electrolyte; to wit, acetonitrile. The purpose of the research conducted in this effort was to identify useful compositions of magnesium salts and polyphosphate solvents that would enable magnesium ions to be cycled within a secondary battery design. The polyphosphate solvents would provide the solvent for the magnesium salts while preventing the electrolyte from being flammable. This would enable these novel electrolytes to be considered as an alternative to THF-based electrolytes. In addition, we explored several of these solvents together with lithium slats for use as high voltage electrolytes for carbon-based electrochemical supercapacitors. The research was successful in that: 1) Magnesium imide dissolved in a phosphate ester solvent that contains a halogented phosphate ester appears to be the preferred electrolyte for a rechargeable Mg cell. 2) A combination of B-doped CNTs and vanadium phosphate appear to be the cathode of choice for a rechargeable Mg cell by virtue of higher voltage and better reversibility. 3) Magnesium alloys appear to perform better than pure magnesium when used in combination with the novel polyphosphate electrolytes. Also, this effort has established that Phoenix Innovation??s family of phosphonate/phosphate electrolytes together with specific lithium slats can be used in supercapacitor systems at voltages of greater than 10V.

  15. Fiber Fabry-Perot tunable filter for high-speed optical packet switching

    SciTech Connect (OSTI)

    Taranenko, N.L.; Tenbrink, S.C.; Hsu, K.; Miller, C.M.

    1997-01-01

    Tunable optical filters are important building blocks for All-Optical systems and networks. Fast optical tuning in several microseconds is necessary to perform high-speed optical packet switching. Multi- Gigabit/sec packet-switching will provide flexibility and higher network throughput when large numbers of users communicate simultaneously. One approach to achieve fast wavelength tuning is to use high-speed piezoelectrically-driven Fiber Fabry-Perot tunable filters (FFP-TFs). The requirement for tuning in microseconds raises a whole new set of challenges, such as ringing, thermostability and mechanical inertia control. It was shown that correlation between the mechanical resonance and optical response of the filter is important for the filter`s speed and for mounting hardware and control circuitry optimization. These features together with the FFP-TF`s high capacitance (approximately 0.25-0.5 microfarad) are being folded into building a special controller to substantially improve the shape of the driving signal and the response of the filter. The resultant controller enables tuning the high-speed FFP-TF three-orders-of- magnitude faster than that possible with standard commercial FFP-TFS. The fastest switching time achieved is 2.5 microseconds. As the result, a new packet-switched media access control protocol is being designed to minimize the searching time. The filter scans only once through the entire optical region and then tunes to all the required channels one after another in a few microseconds. It can help update Rainbow-2 Broadcast-and-Select High-Speed Wavelength Division Multiplexing All-Optical network that currently has a circuit- switched protocol using standard FFP-TFS.

  16. Acceleration switch

    DOE Patents [OSTI]

    Abbin, J.P. Jr.; Middleton, J.N.; Schildknecht, H.E.

    1979-08-20

    An improved acceleration switch is described which is of the type having a mass suspended within a chamber, having little fluid damping at low g levels and high fluid damping at high g levels.

  17. Acceleration switch

    DOE Patents [OSTI]

    Abbin, Jr., Joseph P.; Middleton, John N.; Schildknecht, Harold E.

    1981-01-01

    The disclosure relates to an improved acceleration switch, of the type having a mass suspended within a chamber, having little fluid damping at low g levels and high fluid damping at high g levels.

  18. Marine High Voltage Power Conditioning and Transmission System with Integrated Storage DE-EE0003640 Final Report

    SciTech Connect (OSTI)

    Frank Hoffmann, PhD; Aspinall, Rik

    2012-12-10

    Design, Development, and test of the three-port power converter for marine hydrokinetic power transmission. Converter provides ports for AC/DC conversion of hydrokinetic power, battery storage, and a low voltage to high voltage DC port for HVDC transmission to shore. The report covers the design, development, implementation, and testing of a prototype built by PPS.

  19. A new class of high force, low-voltage, compliant actuation system

    SciTech Connect (OSTI)

    RODGERS,M. STEVEN; KOTA,SRIDHAR; HETRICK,JOEL; LI,ZHE; JENSEN,BRIAN D.; KRYGOWSKI,THOMAS W.; MILLER,SAMUEL L.; BARNES,STEPHEN MATTHEW; BURG,MICHAEL STANLEY

    2000-04-10

    Although many actuators employing electrostatic comb drives have been demonstrated in a laboratory environment, widespread acceptance in mass produced microelectromechanical systems (MEMS) may be limited due to issues associated with low drive force, large real estate demands, high operating voltages, and reliability concerns due to stiction. On the other hand, comb drives require very low drive currents, offer predictable response, and are highly compatible with the fabrication technology. The expand the application space and facilitate the widespread deployment of self-actuated MEMS, a new class of advanced actuation systems has been developed that maintains the highly desirable aspects of existing components, while significantly diminishing the issues that could impede large scale acceptance. In this paper, the authors will present low-voltage electrostatic actuators that offer a dramatic increase in force over conventional comb drive designs. In addition, these actuators consume only a small fraction of the chip area previously used, yielding significant gains in power density. To increase the stroke length of these novel electrostatic actuators, the authors have developed highly efficient compliant stroke amplifiers. The coupling of compact, high-force actuators with fully compliant displacement multipliers sets a new paradigm for highly integrated microelectromechanical systems.

  20. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-01

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

  1. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    SciTech Connect (OSTI)

    BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-01

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>?A) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolished by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.

  2. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    SciTech Connect (OSTI)

    BastaniNejad, Mahzad Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-15

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (?nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>?A) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolished by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100?pA of field emission. The authors speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.

  3. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    SciTech Connect (OSTI)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  4. Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

    SciTech Connect (OSTI)

    J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman

    2011-04-01

    GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.

  5. DC BUFFERING AND FLOATING CURRENT FOR A HIGH VOLTAGE IMB APPLICATION

    SciTech Connect (OSTI)

    J.L. Morrison

    2014-08-01

    An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

  6. From: Laurie Smith To: Congestion Study Comments Subject: High Voltage Transmission Lines

    Energy Savers [EERE]

    High Voltage Transmission Lines Date: Sunday, September 21, 2014 10:02:26 AM To Whom it May Concern DOE: For the following reasons I am opposed to the establishment of National Interest Energy Transmission Corridors (NIETC's): Before the authority of eminent domain should be granted to an energy corp., that corp. should have to prove necessity to the exact locations that the energy is to be transported and that the recipients NEED and WANT that energy and that the region cannot produce their own

  7. A high voltage test stand for electron gun qualification for LINACs

    SciTech Connect (OSTI)

    Wanmode, Yashwant D.; Mulchandani, J.; Acharya, M.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam

    2011-07-01

    An electron gun lest stand has been developed at RRCAT. The test stand consists of a high voltage pulsed power supply, electron gun filament supply, grid supply, UHV system and electron gun current measurement system. Several electron guns developed indigenously were evaluated on this test stand. The shielding is provided for the electron gun set up. Electron gun tests can be tested upto 55 kV with pulse width of 15 microsecs and pulse repetition rates up to 200 Hz. The technical details of the subsystems are furnished and results of performance of the test stand have been reported in this paper. (author)

  8. High-output microwave detector using voltage-induced ferromagnetic resonance

    SciTech Connect (OSTI)

    Shiota, Yoichi Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2014-11-10

    We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque.

  9. Single-crystalline monolayer and multilayer graphene nano switches

    SciTech Connect (OSTI)

    Li, Peng; Cui, Tianhong; Jing, Gaoshan; Zhang, Bo; Sando, Shota

    2014-03-17

    Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1 V, and high switching speed about 100 ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

  10. Electrocaloric devices based on thini-film heat switches

    SciTech Connect (OSTI)

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  11. The commercial development of water repellent coatings for high voltage transmission lines

    SciTech Connect (OSTI)

    Hunter, S. R.; Daniel, A.

    2013-10-31

    The purpose of the Cooperative Research and Development Agreement (CRADA) between UT-Battelle, LLC and Southwire Company was to jointly develop a low cost, commercially viable, water-repellant anti-icing coating system for high voltage transmission lines. Icing of power lines and other structures caused by freezing rain events occurs annually in the United States, and leads to severe and prolonged power outages. These outages cause untold economic and personal distress for many American families and businesses. Researchers at the Department of Energy?s Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee have previously developed a set of superhydrophobic coatings with remarkable anti-icing properties that could potentially be sprayed or painted onto high-tension power lines and pylons. These coatings drastically reduce ice accumulation on these structures during freezing rain events. The project involved obtaining technical input, supplies and test high voltage cables from Southwire, along with the joint development of anti-icing coating techniques, which would result in a commercial license agreement between Southwire and ORNL, and potentially other companies requiring water repellent anti-icing coatings.

  12. Solid state switch

    DOE Patents [OSTI]

    Merritt, Bernard T.; Dreifuerst, Gary R.

    1994-01-01

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

  13. A switched capacitor array based system for high-speed calorimetry

    SciTech Connect (OSTI)

    Levi, M.; Bebek, C.; Ely, R.; Jared, R.; Kipnis, I.; Kirsten, F.; Kleinfelder, S.; Merrick, T.; Milgrome, O.

    1991-12-01

    A sixteen channel analog transient recorder with 256 cells per channel has been fabricated as an integrated circuit. The circuit uses switched capacitor array technology to achieve simultaneous read/write capability and twelve bit dynamic range. Combined with highly parallel analog-to-digital converter and readout control circuitry being developed this system should satisfy the demanding electronics requirements for calorimeter detectors at the SSC. The system design and test results are presented.

  14. Power applications of high-temperature superconductivity: Variable speed motors, current switches, and energy storage for end use

    SciTech Connect (OSTI)

    Hawsey, R.A. [Oak Ridge National Lab., TN (United States); Banerjee, B.B.; Grant, P.M. [Electric Power Research Inst., Palo Alto, CA (United States)

    1996-08-01

    The objective of this project is to conduct joint research and development activities related to certain electric power applications of high-temperature superconductivity (HTS). The new superconductors may allow development of an energy-efficient switch to control current to variable speed motors, superconducting magnetic energy storage (SMES) systems, and other power conversion equipment. Motor types that were considered include induction, permanent magnet, and superconducting ac motors. Because it is impractical to experimentally alter certain key design elements in radial-gap motors, experiments were conducted on an axial field superconducting motor prototype using 4 NbTi magnets. Superconducting magnetic energy storage technology with 0.25--5 kWh stored energy was studied as a viable solution to short duration voltage sag problems on the customer side of the electric meter. The technical performance characteristics of the device wee assembled, along with competing technologies such as active power line conditioners with storage, battery-based uninterruptible power supplies, and supercapacitors, and the market potential for SMES was defined. Four reports were prepared summarizing the results of the project.

  15. High-voltage electrical apparatus utilizing an insulating gas of sulfur hexafluoride and helium

    DOE Patents [OSTI]

    Wootton, Roy E.

    1980-01-01

    High-voltage electrical apparatus includes an outer housing at low potential, an inner electrode disposed within the outer housing at high potential with respect thereto, and support means for insulatably supporting the inner electrode within the outer housing. Conducting particles contaminate the interior of the outer housing, and an insulating gas electrically insulates the inner electrode from the outer housing even in the presence of the conducting particles. The insulating gas is comprised of sulfur hexafluoride at a partial pressure of from about 2.9 to about 3.4 atmospheres absolute, and helium at a partial pressure from about 1.1 to about 11.4 atmospheres absolute. The sulfur hexafluoride comprises between 20 and 65 volume percent of the insulating gas.

  16. ION SWITCH

    DOE Patents [OSTI]

    Cook, B.

    1959-02-10

    An ion switch capable of transferring large magnitudes of power is described. An ion switch constructed in accordance with the invention includes a pair of spaced control electrodes disposed in a highly evacuated region for connection in a conventional circuit to control the passing of power therethrough. A controllable ionic conduction path is provided directiy between the control electrodes by a source unit to close the ion switch. Conventional power supply means are provided to trigger the source unit and control the magnitude, durations and pulse repetition rate of the aforementioned ionic conduction path.

  17. Isolated and soft-switched power converter

    DOE Patents [OSTI]

    Peng, Fang Zheng; Adams, Donald Joe

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  18. Transverse flowing liquid Kerr cell for high average power laser Q-switching and for direct modulation of high power laser beams.

    DOE Patents [OSTI]

    Comaskey, Brian J.

    2004-12-07

    A fluid flow concept is applied in an optical apparatus to define a high gain stand-off, fast electro-optical q-switch which is highly impervious to high average power optical loads.

  19. Process for measuring degradation of sulfur hexafluoride in high voltage systems

    DOE Patents [OSTI]

    Sauers, I.

    1985-04-23

    This invention is a method of detecting the presence of toxic and corrosive by-products in high voltage systems produced by electrically induced degradation of SF/sub 6/ insulating gas in the presence of certain impurities. It is an improvement over previous methods because it is extremely sensitive, detecting by-products present in parts per billion concentrations, and because the device employed is of a simple design and takes advantage of the by-products natural affinity for fluoride ions. The method employs an ion-molecule reaction cell in which negative ions of the by-products are produced by fluorine attachment. These ions are admitted to a negative ion mass spectrometer and identified by their spectra. This spectrometry technique is an improvement over conventional techniques because the negative ion peaks are strong and not obscured by a major ion spectra of the SF/sub 6/ component as is the case in positive ion mass spectrometry.

  20. Process for measuring degradation of sulfur hexafluoride in high voltage systems

    DOE Patents [OSTI]

    Sauers, Isidor (Knoxville, TN)

    1986-01-01

    This invention is a method of detecting the presence of toxic and corrosive by-products in high voltage systems produced by electrically induced degradation of SF.sub.6 insulating gas in the presence of certain impurities. It is an improvement over previous methods because it is extremely sensitive, detecting by-products present in parts per billion concentrations, and because the device employed is of a simple design and takes advantage of the by-products natural affinity for fluoride ions. The method employs an ion-molecule reaction cell in which negative ions of the by-products are produced by fluorine attachment. These ions are admitted to a negative ion mass spectrometer and identified by their spectra. This spectrometry technique is an improvement over conventional techniques because the negative ion peaks are strong and not obscured by a major ion spectra of the SF.sub.6 component as is the case in positive ion mass spectrometry.

  1. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    SciTech Connect (OSTI)

    Dinetta, L.C.; Hannon, M.H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

  2. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  3. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    SciTech Connect (OSTI)

    Yeckel, Christopher; Curry, Randy

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  4. Atmospheric pressure plasma jet with high-voltage power supply based on piezoelectric transformer

    SciTech Connect (OSTI)

    Babij, Micha?; Kowalski, Zbigniew W. Nitsch, Karol; Gotszalk, Teodor; Silberring, Jerzy

    2014-05-15

    The dielectric barrier discharge plasma jet, an example of the nonthermal atmospheric pressure plasma jet (APPJ), generates low-temperature plasmas that are suitable for the atomization of volatile species and can also be served as an ionization source for ambient mass and ion mobility spectrometry. A new design of APPJ for mass spectrometry has been built in our group. In these plasma sources magnetic transformers (MTs) and inductors are typically used in power supplies but they present several drawbacks that are even more evident when dealing with high-voltage normally used in APPJs. To overcome these disadvantages, high frequency generators with the absence of MT are proposed in the literature. However, in the case of miniaturized APPJs these conventional power converters, built of ferromagnetic cores and inductors or by means of LC resonant tank circuits, are not so useful as piezoelectric transformer (PT) based power converters due to bulky components and small efficiency. We made and examined a novel atmospheric pressure plasma jet with PT supplier served as ionization source for ambient mass spectrometry, and especially mobile spectrometry where miniaturization, integration of components, and clean plasma are required. The objective of this paper is to describe the concept, design, and implementation of this miniaturized piezoelectric transformer-based atmospheric pressure plasma jet.

  5. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, Julius; Henesian, Mark A.

    1986-01-01

    A low pressure gas electrode utilizing ionized gas in a glow discharge regime forms a transparent electrode for electro-optical switches. The transparent electrode comprises a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the electrode is a transparent electrode. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. The plasma can be created either by the main high voltage pulser used to charge up the crystal or by auxiliary discharges or external sources of ionization. A typical configuration utilizes 10 torr argon in the discharge region adjacent to each crystal face.

  6. High-Power Plasma Switch for 11.4 GHz Microwave Pulse Compressor

    SciTech Connect (OSTI)

    Jay L. Hirshfield

    2010-03-04

    Results obtained in several experiments on active RF pulse compression at X-band using a magnicon as the high-power RF source are presented. In these experiments, microwave energy was stored in high-Q TE01 and TE02 modes of two parallel-fed resonators, and then discharged using switches activated with rapidly fired plasma discharge tubes. Designs and high-power tests of several versions of the compressor are described. In these experiments, coherent pulse superposition was demonstrated at a 59 MW level of incident power. The compressed pulses observed had powers of 5070 MW and durations of 4070 ns. Peak power gains were measured to be in the range of 7:111:1 with efficiency in the range of 5063%.

  7. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  8. Ceramic end seal design for high temperature high voltage nuclear instrumentation cables

    DOE Patents [OSTI]

    Meiss, James D.; Cannon, Collins P.

    1979-01-01

    A coaxial, hermetically sealed end structure is described for electrical instrumentation cables. A generally tubular ceramic body is hermetically sealed within a tubular sheath which is in turn sealed to the cable sheath. One end of the elongated tubular ceramic insulator is sealed to a metal end cap. The other end of the elongated tubular insulator has an end surface which is shaped concave relative to a central conductor which extends out of this end surface. When the end seal is hermetically sealed to an instrumentation cable device and the central conductor is maintained at a high positive potential relative to the tubular metal sheath, the electric field between the central conductor and the outer sheath tends to collect electrons from the concave end surface of the insulator. This minimizes breakdown pulse noise generation when instrumentation potentials are applied to the central conductor.

  9. Development of a high-voltage, high-power thermal battery

    SciTech Connect (OSTI)

    Guidotti, R.A.; Scharrer, G.L.; Binasiewicz, E.; Reinhardt, F.W.

    1998-04-01

    The power requirements for an inverter application were specified to be 500 V at 360 A, or 180 kW per each of six 1-s pulses delivered over a period of 10 minutes. Conventional high-power sources (e.g., flywheels) could not meet these requirements and the use of a thermal battery was considered. The final design involved four, 125-cell, 50-kW modules connected in series. A module using the LiSi/CoS{sub 2} couple and all-Li (LiCI-LiBr-LiF minimum-melting) electrolyte was successfully developed and tested. A power level of over 40 kW was delivered during a 0.5-s pulse. This translates into a specific power level of over 9 kW/kg or 19.2 kW/L delivered from a module. The module was still able to deliver over 30 kW during a 1-s pulse after 10 minutes.

  10. A combinatorial histidine scanning library approach to engineer highly pH-dependent protein switches

    SciTech Connect (OSTI)

    Murtaugh, Megan L.; Fanning, Sean W.; Sharma, Tressa M.; Terry, Alexandra M.; Horn, James R.

    2012-09-05

    There is growing interest in the development of protein switches, which are proteins whose function, such as binding a target molecule, can be modulated through environmental triggers. Efforts to engineer highly pH sensitive protein-protein interactions typically rely on the rational introduction of ionizable groups in the protein interface. Such experiments are typically time intensive and often sacrifice the protein's affinity at the permissive pH. The underlying thermodynamics of proton-linkage dictate that the presence of multiple ionizable groups, which undergo a pK{sub a} change on protein binding, are necessary to result in highly pH-dependent binding. To test this hypothesis, a novel combinatorial histidine library was developed where every possible combination of histidine and wild-type residue is sampled throughout the interface of a model anti-RNase A single domain VHH antibody. Antibodies were coselected for high-affinity binding and pH-sensitivity using an in vitro, dual-function selection strategy. The resulting antibodies retained near wild-type affinity yet became highly sensitive to small decreases in pH, drastically decreasing their binding affinity, due to the incorporation of multiple histidine groups. Several trends were observed, such as histidine 'hot-spots,' which will help enhance the development of pH switch proteins as well as increase our understanding of the role of ionizable residues in protein interfaces. Overall, the combinatorial approach is rapid, general, and robust and should be capable of producing highly pH-sensitive protein affinity reagents for a number of different applications.

  11. Assessment of research directions for high-voltage direct-current power systems. Final report

    SciTech Connect (OSTI)

    Long, W F

    1982-09-01

    High voltage direct current (HVDC) power transmission continues to be an emerging technology nearly thirty years after its introduction into modern power systems. To date its use has been restricted to either specialized applications having identifiable economic advantages (e.g., breakeven distance) or, rarely, applications where decoupling is needed. Only recently have the operational advantages (e.g., power modulation) of HVDC been realized on operating systems. A research project whose objective was to identify hardware developments and, where appropriate, system applications which can exemplify cost and operational advantages of integrated ac/dc power systems is discussed. The three principal tasks undertaken were: assessment of equipment developments; quantification of operational advantages; and interaction with system planners. Interest in HVDC power transmission has increased markedly over the past several years, and many new systems are now being investigated. The dissemination of information about HVDC, including specifically the symposium undertaken for Task 3, is a critical factor in fostering an understanding of this important adjunct to ac power transmission.

  12. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    SciTech Connect (OSTI)

    Guo, Jiquan; /SLAC

    2009-03-20

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  13. Voltage balanced multilevel voltage source converter system ...

    Office of Scientific and Technical Information (OSTI)

    Voltage balanced multilevel voltage source converter system Citation Details In-Document Search Title: Voltage balanced multilevel voltage source converter system A voltage ...

  14. Reduced Switching Frequency Active Harmonic Elimination for Multilevel Converters

    SciTech Connect (OSTI)

    Du, Zhong; Tolbert, Leon M; Chiasson, John N; Ozpineci, Burak

    2008-01-01

    This paper presents a reduced switching-frequency active-harmonic-elimination method (RAHEM) to eliminate any number of specific order harmonics of multilevel converters. First, resultant theory is applied to transcendental equations to eliminate low-order harmonics and to determine switching angles for a fundamental frequency-switching scheme. Next, based on the number of harmonics to be eliminated, Newton climbing method is applied to transcendental equations to eliminate high-order harmonics and to determine switching angles for the fundamental frequency-switching scheme. Third, the magnitudes and phases of the residual lower order harmonics are computed, generated, and subtracted from the original voltage waveform to eliminate these low-order harmonics. Compared to the active-harmonic-elimination method (AHEM), which generates square waves to cancel high-order harmonics, RAHEM has lower switching frequency. The simulation results show that the method can effectively eliminate all the specific harmonics, and a low total harmonic distortion (THD) near sine wave is produced. An experimental 11-level H-bridge multilevel converter with a field-programmable gate-array controller is employed to experimentally validate the method. The experimental results show that RAHEM does effectively eliminate any number of specific harmonics, and the output voltage waveform has low switching frequency and low THD.

  15. Solid state switch

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  16. Silicon Carbide JFET Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5kV Enhancement-Model Silicon Carbide JFET Switch The novel 6.5kV SiC device and power module represent the world's highest-voltage module based on reliable, normally-off SiC JFETs. It reduces switching losses over that of Si-IGBTs by a factor of 20 and exhibits the fastest turn- on and turn-off of any 6.5kV-rated power module. Another major aspect of what makes this product unique is USCi's development and manufacturing approach. JFETs are simple transistor switches, yet for SiC materials, a

  17. Facet Dependent Disorder in the Pristine High Voltage Lithium-Manganese-Rich Cathode Material

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dixit, Hemant M; Zhou, Wu; Idrobo Tapia, Juan Carlos; Nanda, Jagjit; Cooper, Valentino R

    2014-01-01

    Defects and surface reconstructions are thought to be crucial for the long term stability of high-voltage lithium-manganese-rich cathodes. Unfortunately, many of these defects arise only after electrochemical cycling which occur under harsh conditions making it difficult to fully comprehend the role they play in degrading material performance. Recently, it has been observed that defects are present even in the pristine material. This study, therefore, focuses on examining the nature of the disorder observed in pristine Limore » $$_{1.2}$$Ni$$_{0.175}$$Mn$$_{0.525}$$Co$$_{0.1}$$O$_2$ (LNMCO) particles. Using atomic resolution Z-contrast imaging and electron energy-loss spectroscopy measurements we show that there are indeed a significant amount of anti-site defects present in this material; with transition metals substituting on Li metal sites. Furthermore, we find a strong tendency of segregation of these types of defects towards open facets (surfaces perpendicular to the layered arrangement of atoms), rather than closed facets (surfaces parallel to the layered arrangement of atoms). First principles calculations identify anti-site defect pairs of Ni swapping with Li ions as the predominant defect in the material. Furthermore, energetically favorable swapping of Ni on the Mn sites were observed to lead to Mn depletion at open facets. Relatively, low Ni migration barriers also support the notion that Ni are the predominant cause of disorder. These insights suggests that certain facets of the LNMCO particles may be more useful for inhibiting surface reconstruction and improving the stability of these materials through careful consideration of the exposed surface.« less

  18. High voltage capability electrical coils insulated with materials containing SF.sub.6 gas

    DOE Patents [OSTI]

    Lanoue, Thomas J.; Zeise, Clarence L.; Wagenaar, Loren; Westervelt, Dean C.

    1988-01-01

    A coil is made having a plurality of layers of adjacent metal conductor windings subject to voltage stress, where the windings have insulation therebetween containing a small number of minute disposed throughout its cross-section, where the voids are voids filled with SF.sub.6 gas to substitute for air or other gaseous materials in from about 60% to about 95% of the cross-sectional void volume in the insulation, thus incorporating an amount of SF.sub.6 gas in the cross-section of the insulation effective to substantially increase corona inception voltages.

  19. The laser switched linac and development of a high brilliance electron source

    SciTech Connect (OSTI)

    Melissinos, A.C.; Bamber, C.; Blalock, T.; Fry, A.; Wilson, T.

    1991-09-01

    This task originated in 1987 to explore the possibility of accelerating short bursts of electrons by pulsed power. The principal effort of our group was to demonstrate that electrons can be accelerated by picosecond-long electrical pulses which are compressed in a radial transmission line. This goal has new been achieved and our results are presented in this paper. We have achieved a gradient of 45 MV/m across a 250 {mu}m accelerating gap and have accelerated 10{sup 6} electrons in a 1 ps long pulse. The beam emerges from a 500 {mu}m hole and can be refocused to this transverse dimension. The efficiency of the system, is of order {eta} = 2 {times} 10{sup {minus}6} due to the small number of electrons accelerated. If we identify the gap spacing with one half wavelength of the accelerating r.f.,''our device is equivalent to a 600 GHz structure. The principal limitation in the accelerating gradient comes from the H.V. hold-off properties of the semiconductor disks that are used as photoconductive switches. We believe that with better materials a factor of 10 can be gained in the gradient. Similarly, the electron yield can be increased by at least three orders of magnitude if proper photocathodes are used in place of the metallic surface. The more difficult problem is the engineering of a multicell structure using our present design of the single cell. Our plans for the continuation of this work are given. One of the most promising applications of laser switched acceleration is in the operation of a very low emittance electron source. Thus we have turned our attention to this subject, and in particular to building a high brilliance electron source using a superconducting cavity. Also discussed is the possibility of picosecond x-ray sources.

  20. Microstructure investigation of 13Cr-2Mo ODS steel components obtained by high voltage electric discharge compaction technique

    SciTech Connect (OSTI)

    Bogachev, Igor; Yudin, Artem; Grigoryev, Evgeniy; Chernov, Ivan; Staltsov, Maxim; Khasanov, Oleg; Olevsky, Eugene

    2015-11-02

    Refractory oxide dispersion strengthened 13Cr-2Mo steel powder was successfully consolidated to near theoretical density using high voltage electric discharge compaction. Cylindrical samples with relative density from 90% to 97% and dimensions of 10 mm in diameter and 10–15 mm in height were obtained. Consolidation conditions such as pressure and voltage were varied in some ranges to determine the optimal compaction regime. Three different concentrations of yttria were used to identify its effect on the properties of the samples. It is shown that the utilized ultra-rapid consolidation process in combination with high transmitted energy allows obtaining high density compacts, retaining the initial structure with minimal grain growth. The experimental results indicate some heterogeneity of the structure which may occur in the external layers of the tested samples due to various thermal and electromagnetic in-processing effects. As a result, the choice of the optimal parameters of the consolidation enables obtaining samples of acceptable quality.

  1. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng (Knoxville, TN); Lai, Jih-Sheng (Blacksburg, VA)

    2002-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  2. Multilevel cascade voltage source inverter with separate DC sources

    DOE Patents [OSTI]

    Peng, F.Z.; Lai, J.S.

    1997-06-24

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

  3. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng; Lai, Jih-Sheng

    2001-04-03

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  4. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  5. Vacuum-surface flashover switch with cantilever conductors

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    2001-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  6. Insidious vapors: infrared determination of NO/sub 2/ generated in a high-voltage electric arc

    SciTech Connect (OSTI)

    Carlson, E.M.; LeFevre, P.G.; Williams, R.C.

    1984-11-01

    A study of the quantities of nitrogen dioxide generated by a high-voltage electric discharge was conducted. The amount of nitrogen dioxide present was measured using infrared spectroscopy. Paraffin was used to protect the KBr sample cell from damage and NO/sub 2/. The relative toxicities of phosgene and NO/sub 2/, both generated by arcing of electrical equipment, are presented. 10 references, 2 figures, 2 tables.

  7. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

  8. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    SciTech Connect (OSTI)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

  9. Switched-capacitor isolated LED driver

    DOE Patents [OSTI]

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  10. Nanomechanical switch for integration with CMOS logic.

    SciTech Connect (OSTI)

    Nordquist, Christopher Daniel; Wolfley, Steven L.; Baker, Michael Sean; Czaplewski, David A.; Wendt, Joel Robert; Kraus, Garth Merlin; de Boer, Maarten Pieter; Patrizi, Gary A.

    2008-11-01

    We designed, fabricated and measured the performance of nanoelectromechanical (NEMS) switches. Initial data are reported with one of the switch designs having a measured switching time of 400 ns and an operating voltage of 5 V. The switches operated laterally with unmeasurable leakage current in the 'off' state. Surface micromachining techniques were used to fabricate the switches. All processing was CMOS compatible. A single metal layer, defined by a single mask step, was used as the mechanical switch layer. The details of the modeling, fabrication and testing of the NEMS switches are reported.

  11. Oxidation Potentials of Functionalized Sulfone Solvents for High-Voltage Li-Ion Batteries: A Computational Study

    SciTech Connect (OSTI)

    Shao, Nan; Sun, Xiao-Guang; Dai, Sheng; Jiang, Deen

    2012-01-01

    New electrolytes with large electrochemical windows are needed to meet the challenge for high-voltage Li-ion batteries. Sulfone as an electrolyte solvent boasts of high oxidation potentials. Here we examine the effect of multiple functionalization on sulfone's oxidation potential. We compute oxidation potentials for a series of sulfone-based molecules functionalized with fluorine, cyano, ester, and carbonate groups by using a quantum chemistry method within a continuum solvation model. We find that multifunctionalization is a key to achieving high oxidation potentials. This can be realized through either a fluorether group on a sulfone molecule or sulfonyl fluoride with a cyano or ester group.

  12. Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

    SciTech Connect (OSTI)

    Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai; Tang, Kai; Liu, Zhi-jie; Wang, Sen

    2013-05-13

    Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

  13. Voltage balanced multilevel voltage source converter system ...

    Office of Scientific and Technical Information (OSTI)

    Voltage balanced multilevel voltage source converter system Citation Details In-Document Search Title: Voltage balanced multilevel voltage source converter system You are ...

  14. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, R.; Kotter, D.

    1994-04-26

    An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

  15. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, Richard; Kotter, Dale

    1994-01-01

    An optical voltage reference for providing an alternative to a battery source. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function.

  16. Feasibility of gate-turnoff thyristors in a high-voltage direct-current transmission system: Final report

    SciTech Connect (OSTI)

    McMurray, W.

    1987-08-01

    This study to identify potentially attractive applications for gate-turnoff thyristor (GTO) converters in utility systems includes both high-voltage direct-current (HVDC) valves and static volt-ampere reactive (VAR) controllers. The work includes a broad review of basic principles and the power circuit arrangements that are judged to be most attractive. The major differences between ordinary thyristors and GTO converters are discussed, including alternative HVDC transmission systems and static VAR controllers that are possible with GTOs. Whereas a current-source type of converter is the obvious choice with ordinary thyristors, the use of GTOs allows either current-source or voltage-source converters to be considered. A computer-aided analysis of the basic 6-pulse GTO current-source converter system is presented, including general equations for steady-state operation and plotting calculated waveforms. An analysis of a GTO voltage-source converter is given in less detail. Due to incomplete performance data, unresolved critical problems such as protection, and the disadvantages of higher cost, complexity and losses, it is difficult to recommend a specific GTO converter system at this time. The major advantage that GTO converters can offer is rapid and smoothly continuous control of reactive power. Further development of GTO converters should be aimed towards an application where reactive power control is very important and not readily achievable by conventional methods. 12 refs., 47 figs.

  17. VOLTAGE REGULATOR

    DOE Patents [OSTI]

    Von Eschen, R.L.; Scheele, P.F.

    1962-04-24

    A transistorized voltage regulator which provides very close voitage regulation up to about 180 deg F is described. A diode in the positive line provides a constant voltage drop from the input to a regulating transistor emitter. An amplifier is coupled to the positive line through a resistor and is connected between a difference circuit and the regulating transistor base which is negative due to the difference in voltage drop across thc diode and the resistor so that a change in the regulator output causes the amplifier to increase or decrease the base voltage and current and incrcase or decrease the transistor impedance to return the regulator output to normal. (AEC)

  18. The effect of the dc bias voltage on the x-ray bremsstrahlung and beam intensities of medium and highly charged ions of argon

    SciTech Connect (OSTI)

    Rodrigues, G.; Lakshmy, P. S.; Kanjilal, D.; Roy, A.; Baskaran, R.

    2010-02-15

    X-ray bremsstrahlung measurements from the 18 GHz High Temperature Superconducting Electron Cyclotron Resonance Ion Source, Pantechnik-Delhi Ion Source were measured as a function of negative dc bias voltage, keeping all other source operating parameters fixed and the extraction voltage in the off condition. The optimization of medium and highly charged ions of argon with similar source operating parameters is described. It is observed that the high temperature component of the electron is altered significantly with the help of bias voltage, and the electron population has to be maximized for obtaining higher current.

  19. Microstructure investigation of 13Cr-2Mo ODS steel components obtained by high voltage electric discharge compaction technique

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bogachev, Igor; Yudin, Artem; Grigoryev, Evgeniy; Chernov, Ivan; Staltsov, Maxim; Khasanov, Oleg; Olevsky, Eugene

    2015-11-02

    Refractory oxide dispersion strengthened 13Cr-2Mo steel powder was successfully consolidated to near theoretical density using high voltage electric discharge compaction. Cylindrical samples with relative density from 90% to 97% and dimensions of 10 mm in diameter and 10–15 mm in height were obtained. Consolidation conditions such as pressure and voltage were varied in some ranges to determine the optimal compaction regime. Three different concentrations of yttria were used to identify its effect on the properties of the samples. It is shown that the utilized ultra-rapid consolidation process in combination with high transmitted energy allows obtaining high density compacts, retaining themore » initial structure with minimal grain growth. The experimental results indicate some heterogeneity of the structure which may occur in the external layers of the tested samples due to various thermal and electromagnetic in-processing effects. As a result, the choice of the optimal parameters of the consolidation enables obtaining samples of acceptable quality.« less

  20. A Transformer-less Partial Power Boost Converter for PV Applications Using a Three-Level Switching Cell

    SciTech Connect (OSTI)

    Mohammed Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Somasundaram Essakiappan

    2013-03-01

    Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semiconductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.

  1. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

    DOE Patents [OSTI]

    Nelson, Scott D.

    2016-05-10

    A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

  2. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, Donald M.; Shires, Charles D.

    1988-01-01

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  3. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, D.M.; Shires, C.D.

    1982-09-30

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  4. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    SciTech Connect (OSTI)

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2?cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470?nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  5. Improving the performance of stainless-steel DC high voltage photoelectron gun cathode electrodes via gas conditioning with helium or krypton

    SciTech Connect (OSTI)

    Bastaninejad, Mahzad; Elmustafa, Abdelmageed; Forman, Eric I.; Clark, James; Covert, Steven R.; Grames, Joseph M.; Hansknecht, John C.; Hernandez-Garcia, Carlos; Poelker, Bernard; Suleiman, Riad S.

    2014-10-01

    Gas conditioning was shown to eliminate field emission from cathode electrodes used inside DC high voltage photoelectron guns, thus providing a reliable means to operate photoguns at higher voltages and field strengths. Measurements and simulation results indicate that gas conditioning eliminates field emission from cathode electrodes via two mechanisms: sputtering and implantation, with the benefits of implantation reversed by heating the electrode. We have studied five stainless steel electrodes (304L and 316LN) that were polished to approximately 20 nm surface roughness using diamond grit, and evaluated inside a high voltage apparatus to determine the onset of field emission as a function of voltage and field strength. The field emission characteristics of each electrode varied significantly upon the initial application of voltage but improved to nearly the same level after gas conditioning using either helium or krypton, exhibiting less than 10 pA field emission at ?225 kV bias voltage with a 50 mm cathode/anode gap, corresponding to a field strength of ~13 MV/m. Field emission could be reduced with either gas, but there were conditions related to gas choice, voltage and field strength that were more favorable than others.

  6. The currentvoltage and capacitancevoltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

    SciTech Connect (OSTI)

    zerli, Halil; Karteri, ?brahim; Karata?, ?kr; Altindal, ?emsettin

    2014-05-01

    Highlights: The electronic parameters of the diode under temperature were investigated. The barrier heights have a Gaussian distribution. Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent currentvoltage (IV) and capacitancevoltage (CV) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280415 K. The barrier height for the Au/n-type GaAs SBDs from the IV and CV characteristics have varied from 0.901 eV to 0.963 eV (IV) and 1.234 eV to 0.967 eV (CV), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I{sub 0}/T{sup 2}) versus (kT){sup ?1} and ln(I{sub 0}/T{sup 2}) versus (nkT){sup ?1} plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A ?{sub b0} versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of ?{sup }{sub b0} = 1.071 eV and ?{sub 0} = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot.

  7. Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants

    DOE Patents [OSTI]

    Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

    2014-09-09

    A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

  8. Electron-Beam Switches For A High Peak Power Sled-II Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay, L.

    2015-12-02

    Omega-P demonstrated triggered electron-beam switches on the L=2 m dual-delay-line X-band pulse compressor at Naval Research Laboratory (NRL). In those experiments, with input pulses of up to 9 MW from the Omega-P/NRL X-band magnicon, output pulses having peak powers of 140-165 MW and durations of 16-20 ns were produced, with record peak power gains M of 18-20. Switch designs are described based on the successful results that should be suitable for use with the existing SLAC SLED-II delay line system, to demonstrate C=9, M=7, and n>>78%, yielding 173ns compressed pulses with peak powers up to 350MW with input of a single 50-MW.

  9. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, John P. (Albuquerque, NM); Emin, David (Albuquerque, NM)

    1986-01-01

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  10. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, J.P.; Emin, D.

    1983-12-21

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  11. Soft Switching Technologies | Open Energy Information

    Open Energy Info (EERE)

    Soft Switching Technologies Jump to: navigation, search Name: Soft Switching Technologies Place: Wisconsin Product: Supplier of power quality solutions for delivery of highly...

  12. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

    1994-09-27

    A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

  13. Acceleration Factors for Damp-Heat and HAST with High Voltage...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado PDF icon pvmrw13ps5d2rowell.pdf More Documents & Publications High PID Resistant ...

  14. Development of a High-Speed Static Switch for Distributed Energy and Microgrid Applications

    SciTech Connect (OSTI)

    Kroposki, B.; Pink, C.; Lynch, J.; John, V.; Meor Daniel, S.; Benedict, E.; Vihinen, I.

    2007-01-01

    Distributed energy resources can provide power to local loads in the electric distribution system and benefits such as improved reliability. Microgrids are intentional islands formed at a facility or in an electrical distribution system that contains at least one distributed resource and associated loads. Microgrids that operate both electrical generation and loads in a coordinated manner can offer additional benefits to the customer and local utility. The loads and energy sources can be disconnected from and reconnected to the area or local utility with minimal disruption to the local loads, thereby improving reliability. This paper details the development and testing of a highspeed static switch for distributed energy and microgrid applications.

  15. High voltage rechargeable magnesium batteries having a non-aqueous electrolyte

    DOE Patents [OSTI]

    Doe, Robert Ellis; Lane, George Hamilton; Jilek, Robert E.; Hwang, Jaehee

    2016-03-22

    A rechargable magnesium battery having an non-aqueous electrolyte is provided. The properties of the electrolyte include high conductivity, high Coulombic efficiency, and an electrochemical window that can exceed 3.5 V vs. Mg/Mg.sup.+2. The use of the electrolyte promotes the electrochemical deposition and dissolution of Mg without the use of any Grignard reagents, other organometallic materials, tetraphenyl borate, or tetrachloroaluminate derived anions. Other Mg-containing electrolyte systems that are expected to be suitable for use in secondary batteries are also described.

  16. Proceedings of the seventh international conference on high voltage electron microscopy

    SciTech Connect (OSTI)

    Fisher, R.M.; Gronsky, R.; Westmacott, K.H.

    1983-01-01

    Eight-four papers are arranged under the following headings: high resolution, techniques and instrumentation, radiation effects, in-situ and phase transformations, minerals and ceramics, and semiconductors and thin films. Twenty-three papers were abstracted separately for the data base; three of the remainder had previously been abstracted. (DLC)

  17. Formation, dynamics, and implication of solid electrolyte interphase in high voltage reversible conversion fluoride nanocomposites

    SciTech Connect (OSTI)

    Gmitter, Andrew J.; Badway, Fadwa; Rangan, Sylvie; Bartynski, Robert A.; Halajko, Anna; Pereira, Nathalie; Amatucci, Glenn G.

    2010-01-01

    Metal fluoride nanocomposites are uniquely suited as an alternative pathway to provide very high energy density cathodes for lithium batteries. Contrasted with modern intercalation compounds, they undergo conversion upon discharge into nanodomains of lithium fluoride and highly active metal. The nanosized metal formed during the discharge process along with the dynamic nature of the crystal structure may have considerable impact on the stability of any solid state interphase formed through reaction with the electrolyte. This is in contrast to the more macrocrystalline and stable crystal structure of traditional intercalation compounds. It has been found that the cyclic carbonates are susceptible to decomposition on the nanometal surfaces at potentials as high as 2.00 V vs. Li, and the products have been identified with Field Emission Scanning Electron Microscopy (FESEM), Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy (ATR-FTIR), and X-ray Photoelectron Spectroscopy (XPS) as lithium carbonate species. Of greater importance is the impact of these decomposition products on the reversible cycling of the metal fluoride. Through a series of potentiodynamic and galvanostatic cycling trials, a clear relationship has been developed for the bismuth fluoride nanocomposites, the decomposition of the electrolyte solvent, and the cycle life. Acyclic organic carbonate solvents have been found to have minimal interaction and exhibited better long-term cycling performance than cyclic solvents.

  18. C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

    SciTech Connect (OSTI)

    Kawarada, H.; Tsuboi, H.; Naruo, T.; Yamada, T.; Xu, D.; Daicho, A.; Saito, T.; Hiraiwa, A.

    2014-07-07

    By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-H surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.

  19. Ferroelectric opening switches for large-scale pulsed power drivers.

    SciTech Connect (OSTI)

    Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

    2009-11-01

    Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of these unexpected discoveries have lead to new research directions to address challenges.

  20. Charge-pump voltage converter

    DOE Patents [OSTI]

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  1. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

    DOE Patents [OSTI]

    Kalinin, Sergei V.; Baddorf, Arthur P.; Lee, Ho Nyung; Shin, Junsoo; Gruverman, Alexei L.; Karapetian, Edgar; Kachanov, Mark

    2007-11-06

    A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

  2. Erected mirror optical switch

    DOE Patents [OSTI]

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  3. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  4. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, James D.

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  5. Optical switches and switching methods

    DOE Patents [OSTI]

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  6. HIGH VOLTAGE ELECTRODES

    DOE Patents [OSTI]

    Murray, J.J.

    1963-04-23

    S>This patent relates to electrode structure for creating an intense direct current electric field which may have a field strength of the order of two to three times that heretofore obtained, with automatic suppression of arcing. The positive electrode is a conventional conductive material such as copper while the negative electrode is made from a special material having a resistivity greater than that of good conductors and less than that of good insulators. When an incipient arc occurs, the moderate resistivity of the negative electrode causes a momentary, localized decrease in the electric field intensity, thus suppressing the flow of electrons and avoiding arcing. Heated glass may be utilized for the negative electrode, since it provides the desired combination of resistivity, capacity, dielectric strength, mechani-cal strength, and thermal stability. (AEC)

  7. Divertor impurity injection using high voltage arcs for impurity transport studies on the Mega Amp Spherical Tokamak

    SciTech Connect (OSTI)

    Leggate, H. J. Turner, M. M.; Lisgo, S. W.; Harrison, J. R.; Elmore, S.; Allan, S. Y.; Gaffka, R. C.; Stephen, R. C.

    2014-12-15

    The operation of next-generation fusion reactors will be significantly affected by impurity transport in the scrape-off layer (SOL). Current modelling efforts are restricted by a lack of detailed data on impurity transport in the SOL. In order to address this, a carbon injector has been designed and installed on the Mega Amp Spherical Tokamak (MAST). The injector creates short lived carbon plumes originating at the MAST divertor lasting less than 50 μs. High voltage capacitor banks are used to create a discharge across concentric carbon electrodes located in a probe mounted on the Divertor Science Facility in the MAST lower divertor. This results in a very short plume duration allowing observation of the evolution of the plume and precise localisation of the plume relative to the X-point on MAST. The emission from the carbon plume was imaged using fast visible cameras filtered in order to isolate the carbon II and carbon III emission lines centered around 514 nm and 465 nm.

  8. Characteristics of temperature rise in variable inductor employing magnetorheological fluid driven by a high-frequency pulsed voltage source

    SciTech Connect (OSTI)

    Lee, Ho-Young; Kang, In Man; Shon, Chae-Hwa; Lee, Se-Hee

    2015-05-07

    A variable inductor with magnetorheological (MR) fluid has been successfully applied to power electronics applications; however, its thermal characteristics have not been investigated. To evaluate the performance of the variable inductor with respect to temperature, we measured the characteristics of temperature rise and developed a numerical analysis technique. The characteristics of temperature rise were determined experimentally and verified numerically by adopting a multiphysics analysis technique. In order to accurately estimate the temperature distribution in a variable inductor with an MR fluid-gap, the thermal solver should import the heat source from the electromagnetic solver to solve the eddy current problem. To improve accuracy, the B–H curves of the MR fluid under operating temperature were obtained using the magnetic property measurement system. In addition, the Steinmetz equation was applied to evaluate the core loss in a ferrite core. The predicted temperature rise for a variable inductor showed good agreement with the experimental data and the developed numerical technique can be employed to design a variable inductor with a high-frequency pulsed voltage source.

  9. Photoconductive switch package

    DOE Patents [OSTI]

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  10. Photoconductive switch package

    DOE Patents [OSTI]

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  11. Photoconductive switch package

    DOE Patents [OSTI]

    Caporaso, George J

    2015-11-05

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  12. MULTIPLE SPARK GAP SWITCH

    DOE Patents [OSTI]

    Schofield, A.E.

    1958-07-22

    A multiple spark gap switch of unique construction is described which will permit controlled, simultaneous discharge of several capacitors into a load. The switch construction includes a disc electrode with a plurality of protuberances of generally convex shape on one surface. A firing electrode is insulatingly supponted In each of the electrode protuberances and extends substantially to the apex thereof. Individual electrodes are disposed on an insulating plate parallel with the disc electrode to form a number of spark gaps with the protuberances. These electrodes are each connected to a separate charged capacitor and when a voltage ls applied simultaneously between the trigger electrodes and the dlsc electrode, each spark gap fires to connect its capacitor to the disc electrode and a subsequent load.

  13. Phosphorus Enrichment as a New Composition in the Solid Electrolyte Interphase of High-Voltage Cathodes and Its Effects on Battery Cycling

    SciTech Connect (OSTI)

    Yan, Pengfei; Zheng, Jianming; Kuppan, Saravanan; Li, Qiuyan; Lv, Dongping; Xiao, Jie; Chen, Guoying; Zhang, Jiguang; Wang, Chong M.

    2015-11-10

    Immersion of a solid into liquid often leads to the modification of both the structure and chemistry of surface of the solid, which subsequently affects the chemical and physical properties of the system. For the case of the rechargeable lithium ion battery, such a surface modification is termed as solid electrolyte interphase (SEI) layer, which has been perceived to play critical role for the stable operation of the batteries. However, the structure and chemical composition of SEI layer and its spatial distribution and dependence on the battery operating condition remain unclear. By using aberration corrected scanning transmission electron microscopy coupled with ultra-high sensitive energy dispersive x-ray spectroscopy, we probed the structure and chemistry of SEI layer on several high voltage cathodes. We show that layer-structured cathodes, when cycled at a high cut off voltage, can form a P-rich SEI layer on their surface, which is a direct evidence of Li-salt (LiPF6) decomposition. Our systematical investigations indicate such cathode/Li-salt side reaction shows strong dependence on structure of the cathode materials, operating voltage and temperature, indicating the feasibility of SEI engineering. These findings provide us valuable insights into the complex interface between the high-voltage cathode and the electrolyte.

  14. Spectral shape deformation in inverse spin Hall voltage in Y{sub 3}Fe{sub 5}O{sub 12}|Pt bilayers at high microwave power levels

    SciTech Connect (OSTI)

    Lustikova, J. Shiomi, Y.; Handa, Y.; Saitoh, E.

    2015-02-21

    We report on the deformation of microwave absorption spectra and of the inverse spin Hall voltage signals in thin film bilayers of yttrium iron garnet (YIG) and platinum at high microwave power levels in a 9.45-GHz TE{sub 011} cavity. As the microwave power increases from 0.15 to 200 mW, the resonance field shifts to higher values, and the initially Lorentzian spectra of the microwave absorption intensity as well as the inverse spin Hall voltage signals become asymmetric. The contributions from opening of the magnetization precession cone and heating of YIG cannot well reproduce the data. Control measurements of inverse spin Hall voltages on thin-film YIG|Pt systems with a range of line widths underscore the role of spin-wave excitations in spectral deformation.

  15. Wind Power Plant Voltage Stability Evaluation: Preprint

    SciTech Connect (OSTI)

    Muljadi, E.; Zhang, Y. C.

    2014-09-01

    Voltage stability refers to the ability of a power system to maintain steady voltages at all buses in the system after being subjected to a disturbance from a given initial operating condition. Voltage stability depends on a power system's ability to maintain and/or restore equilibrium between load demand and supply. Instability that may result occurs in the form of a progressive fall or rise of voltages of some buses. Possible outcomes of voltage instability are the loss of load in an area or tripped transmission lines and other elements by their protective systems, which may lead to cascading outages. The loss of synchronism of some generators may result from these outages or from operating conditions that violate a synchronous generator's field current limit, or in the case of variable speed wind turbine generator, the current limits of power switches. This paper investigates the impact of wind power plants on power system voltage stability by using synchrophasor measurements.

  16. Electronic logic for enhanced switch reliability

    DOE Patents [OSTI]

    Cooper, J.A.

    1984-01-20

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  17. Acceleration switch

    DOE Patents [OSTI]

    Abbin, Jr., Joseph P.; Devaney, Howard F.; Hake, Lewis W.

    1982-08-17

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  18. Voltage control in pulsed system by predict-ahead control

    DOE Patents [OSTI]

    Payne, Anthony N.; Watson, James A.; Sampayan, Stephen E.

    1994-01-01

    A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load.

  19. Voltage control in pulsed system by predict-ahead control

    DOE Patents [OSTI]

    Payne, A.N.; Watson, J.A.; Sampayan, S.E.

    1994-09-13

    A method and apparatus for predict-ahead pulse-to-pulse voltage control in a pulsed power supply system is disclosed. A DC power supply network is coupled to a resonant charging network via a first switch. The resonant charging network is coupled at a node to a storage capacitor. An output load is coupled to the storage capacitor via a second switch. A de-Q-ing network is coupled to the resonant charging network via a third switch. The trigger for the third switch is a derived function of the initial voltage of the power supply network, the initial voltage of the storage capacitor, and the present voltage of the storage capacitor. A first trigger closes the first switch and charges the capacitor. The third trigger is asserted according to the derived function to close the third switch. When the third switch is closed, the first switch opens and voltage on the node is regulated. The second trigger may be thereafter asserted to discharge the capacitor into the output load. 4 figs.

  20. Statistical analysis of the dynamics of secondary electrons in the flare of a high-voltage beam-type discharge

    SciTech Connect (OSTI)

    Demkin, V. P.; Mel'nichuk, S. V.

    2014-09-15

    In the present work, results of investigations into the dynamics of secondary electrons with helium atoms in the presence of the reverse electric field arising in the flare of a high-voltage pulsed beam-type discharge and leading to degradation of the primary electron beam are presented. The electric field in the discharge of this type at moderate pressures can reach several hundred V/cm and leads to considerable changes in the kinetics of secondary electrons created in the process of propagation of the electron beam generated in the accelerating gap with a grid anode. Moving in the accelerating electric field toward the anode, secondary electrons create the so-called compensating current to the anode. The character of electron motion and the compensating current itself are determined by the ratio of the field strength to the concentration of atoms (E/n). The energy and angular spectra of secondary electrons are calculated by the Monte Carlo method for different ratios E/n of the electric field strength to the helium atom concentration. The motion of secondary electrons with threshold energy is studied for inelastic collisions of helium atoms and differential analysis is carried out of the collisional processes causing energy losses of electrons in helium for different E/n values. The mechanism of creation and accumulation of slow electrons as a result of inelastic collisions of secondary electrons with helium atoms and selective population of metastable states of helium atoms is considered. It is demonstrated that in a wide range of E/n values the motion of secondary electrons in the beam-type discharge flare has the character of drift. At E/n values characteristic for the discharge of the given type, the drift velocity of these electrons is calculated and compared with the available experimental data.

  1. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, Kim W.; Kiekel, Paul

    1999-01-01

    Apparatus for synchronizing the output pulses from a pair of magnetic switches. An electrically conductive loop is provided between the pair of switches with the loop having windlings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself.

  2. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, K.W.; Kiekel, P.

    1999-04-27

    Apparatus for synchronizing the output pulses from a pair of magnetic switches is disclosed. An electrically conductive loop is provided between the pair of switches with the loop having windings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself. 13 figs.

  3. Apparatus for producing voltage and current pulses

    DOE Patents [OSTI]

    Kirbie, Hugh; Dale, Gregory E.

    2010-12-21

    An apparatus having one or more modular stages for producing voltage and current pulses. Each module includes a diode charging means to charge a capacitive means that stores energy. One or more charging impedance means are connected to the diode charging means to provide a return current pathway. A solid-state switch discharge means, with current interruption capability, is connected to the capacitive means to discharge stored energy. Finally, a control means is provided to command the switching action of the solid-state switch discharge means.

  4. Unraveling the Voltage-Fade Mechanism in High-Energy-Density Lithium-Ion Batteries: Origin of the Tetrahedral Cations for Spinel Conversion

    SciTech Connect (OSTI)

    Mohanty, Debasish; Li, Jianlin; Abraham, Daniel P.; Huq, Ashfia; Payzant, E. Andrew; Wood, David L.; Daniel, Claus

    2014-09-30

    Discovery of high-voltage layered lithium-and manganese-rich (LMR) composite oxide electrode has dramatically enhanced the energy density of current Li-ion energy storage systems. However, practical usage of these materials is currently not viable because of their inability to maintain a consistent voltage profile (voltage fading) during subsequent charge-discharge cycles. This report rationalizes the cause of this voltage fade by providing the evidence of layer to spinel-like (LSL) structural evolution pathways in the host Li1.2Mn0.55Ni0.15Co0.1O2 LMR composite oxide. By employing neutron powder diffraction, and temperature dependent magnetic susceptibility, we show that LSL structural rearrangement in LMR oxide occurs through a tetrahedral cation intermediate via: i) diffusion of lithium atoms from octahedral to tetrahedral sites of the lithium layer [(LiLioct →LiLitet] which is followed by the dispersal of the lithium ions from the adjacent octahedral site of the metal layer to the tetrahedral sites of lithium layer [LiTM oct → LiLitet]; and ii) migration of Mn from the octahedral sites of the transition metal layer to the permanent octahedral site of lithium layer via tetrahedral site of lithium layer [MnTMoct MnLitet MnLioct)]. The findings opens the door to the potential routes to mitigate this atomic restructuring in the high-voltage LMR composite oxide cathodes by manipulating the composition/structure for practical use in high-energy-density lithium-ion batteries.

  5. Unraveling the Voltage-Fade Mechanism in High-Energy-Density Lithium-Ion Batteries: Origin of the Tetrahedral Cations for Spinel Conversion

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mohanty, Debasish; Li, Jianlin; Abraham, Daniel P.; Huq, Ashfia; Payzant, E. Andrew; Wood, David L.; Daniel, Claus

    2014-09-30

    Discovery of high-voltage layered lithium-and manganese-rich (LMR) composite oxide electrode has dramatically enhanced the energy density of current Li-ion energy storage systems. However, practical usage of these materials is currently not viable because of their inability to maintain a consistent voltage profile (voltage fading) during subsequent charge-discharge cycles. This report rationalizes the cause of this voltage fade by providing the evidence of layer to spinel-like (LSL) structural evolution pathways in the host Li1.2Mn0.55Ni0.15Co0.1O2 LMR composite oxide. By employing neutron powder diffraction, and temperature dependent magnetic susceptibility, we show that LSL structural rearrangement in LMR oxide occurs through a tetrahedral cationmore » intermediate via: i) diffusion of lithium atoms from octahedral to tetrahedral sites of the lithium layer [(LiLioct →LiLitet] which is followed by the dispersal of the lithium ions from the adjacent octahedral site of the metal layer to the tetrahedral sites of lithium layer [LiTM oct → LiLitet]; and ii) migration of Mn from the octahedral sites of the transition metal layer to the permanent octahedral site of lithium layer via tetrahedral site of lithium layer [MnTMoct MnLitet MnLioct)]. The findings opens the door to the potential routes to mitigate this atomic restructuring in the high-voltage LMR composite oxide cathodes by manipulating the composition/structure for practical use in high-energy-density lithium-ion batteries.« less

  6. Voltage balanced multilevel voltage source converter system

    DOE Patents [OSTI]

    Peng, Fang Zheng (Oak Ridge, TN); Lai, Jih-Sheng (Knoxville, TN)

    1997-01-01

    A voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means.

  7. Voltage balanced multilevel voltage source converter system

    DOE Patents [OSTI]

    Peng, F.Z.; Lai, J.S.

    1997-07-01

    Disclosed is a voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means. 15 figs.

  8. Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS).

    SciTech Connect (OSTI)

    Mar, Alan; Zutavern, Fred J.; Vawter, Gregory A.; Hjalmarson, Harold P.; Gallegos, Richard Joseph; Bigman, Verle Howard

    2016-01-01

    Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. . Executive Summary Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. The new vertical switch design configuration generates parallel filaments in the bulk GaAs (as opposed to just beneath the surface as in previous designs) to achieve breakdown fields close to the maximum for the bulk GaAs while operating in air, and with 2-D scalability of the number of current-sharing filaments. This design also may be highly compatible with 2-D VCSEL arrays for optical triggering. The demonstration of this design in this LDRD utilized standard thickness wafers to trigger 0.4kA at 35kV/cm (limited by 0.6mm wafer thickness), tested to 1e5 shots with no detectable degradation of switch performance. Higher fields, total current, and switching voltages would be achievable with thicker GaAs wafers. Another important application pursued in this LDRD is the use of PCSS for trigger generator applications. Conventional in-plane PCSS have achieved triggering of a 100kV sparkgap (Kinetech-type) switch of the type similar to switches being considered for accelerator upgrades. The trigger is also being developed for pulsed power for HPM applications that require miniaturization and robust performance in noisy compact environments. This has spawned new programs for developing this technology, including an STTR for VCSEL trigger laser integration, also pursuing other follow-on applications.

  9. High-frequency matrix converter with square wave input

    DOE Patents [OSTI]

    Carr, Joseph Alexander; Balda, Juan Carlos

    2015-03-31

    A device for producing an alternating current output voltage from a high-frequency, square-wave input voltage comprising, high-frequency, square-wave input a matrix converter and a control system. The matrix converter comprises a plurality of electrical switches. The high-frequency input and the matrix converter are electrically connected to each other. The control system is connected to each switch of the matrix converter. The control system is electrically connected to the input of the matrix converter. The control system is configured to operate each electrical switch of the matrix converter converting a high-frequency, square-wave input voltage across the first input port of the matrix converter and the second input port of the matrix converter to an alternating current output voltage at the output of the matrix converter.

  10. Optical switch

    DOE Patents [OSTI]

    Reedy, Robert P.

    1987-01-01

    An optical switching device (10) is provided whereby light from a first glass fiber (16) or a second glass fiber (14) may be selectively transmitted into a third glass fiber (18). Each glass fiber is provided with a focusing and collimating lens system (26, 28, 30). In one mode of operation, light from the first glass fiber (16) is reflected by a planar mirror (36) into the third glass fiber (18). In another mode of operation, light from the second glass fiber (14) passes directly into the third glass fiber (18). The planar mirror (36) is attached to a rotatable table (32) which is rotated to provide the optical switching.

  11. Optical switch

    DOE Patents [OSTI]

    Reedy, R.P.

    1987-11-10

    An optical switching device is provided whereby light from a first glass fiber or a second glass fiber may be selectively transmitted into a third glass fiber. Each glass fiber is provided with a focusing and collimating lens system. In one mode of operation, light from the first glass fiber is reflected by a planar mirror into the third glass fiber. In another mode of operation, light from the second glass fiber passes directly into the third glass fiber. The planar mirror is attached to a rotatable table which is rotated to provide the optical switching. 3 figs.

  12. Low Beam Voltage, 10 MW, L-Band Cluster Klystron

    SciTech Connect (OSTI)

    Teryaev, V.; Yakovlev, V.P.; Kazakov, S.; Hirshfield, J.L.; /Yale U. /Omega-P, New Haven

    2009-05-01

    Conceptual design of a multi-beam klystron (MBK) for possible ILC and Project X applications is presented. The chief distinction between this MBK design and existing 10-MW MBK's is the low operating voltage of 60 kV. There are at least four compelling reasons that justify development at this time of a low-voltage MBK, namely (1) no pulse transformer; (2) no oil tank for high-voltage components and for the tube socket; (3) no high-voltage cables; and (4) modulator would be a compact 60-kV IGBT switching circuit. The proposed klystron consists of four clusters containing six beams each. The tube has common input and output cavities for all 24 beams, and individual gain cavities for each cluster. A closely related optional configuration, also for a 10 MW tube, would involve four totally independent cavity clusters with four independent input cavities and four 2.5 MW output ports, all within a common magnetic circuit. This option has appeal because the output waveguides would not require a controlled atmosphere, and because it would be easier to achieve phase and amplitude stability as required in individual SC accelerator cavities.

  13. Identifying surface structural changes in layered Li-excess nickel manganese oxides in high voltage lithium ion batteries: A joint experimental and theoretical study

    SciTech Connect (OSTI)

    Xu, Bo; Fell, Christopher R.; Chi, Miaofang; Meng, Ying Shirley

    2011-09-06

    High voltage cathode materials Li-excess layered oxide compounds Li[Ni{sub x}Li{sub 1/3-2x/3}Mn{sub 2/3-x/3}]O{sub 2} (0 < x < 1/2) are investigated in a joint study combining both computational and experimental methods. The bulk and surface structures of pristine and cycled samples of Li[Ni{sub 1/5}Li{sub 1/5}Mn{sub 3/5}]O{sub 2} are characterized by synchrotron X-Ray diffraction together with aberration corrected Scanning Transmission Electron Microscopy (a-S/TEM). Electron Energy Loss Spectroscopy (EELS) is carried out to investigate the surface changes of the samples before/after electrochemical cycling. Combining first principles computational investigation with our experimental observations, a detailed lithium de-intercalation mechanism is proposed for this family of Li-excess layered oxides. The most striking characteristics in these high voltage high energy density cathode materials are (1) formation of tetrahedral lithium ions at voltage less than 4.45 V and (2) the transition metal (TM) ions migration leading to phase transformation on the surface of the materials. We show clear evidence of a new spinel-like solid phase formed on the surface of the electrode materials after high-voltage cycling. It is proposed that such surface phase transformation is one of the factors contributing to the first cycle irreversible capacity and the main reason for the intrinsic poor rate capability of these materials.

  14. FAST ACTING CURRENT SWITCH

    DOE Patents [OSTI]

    Batzer, T.H.; Cummings, D.B.; Ryan, J.F.

    1962-05-22

    A high-current, fast-acting switch is designed for utilization as a crowbar switch in a high-current circuit such as used to generate the magnetic confinement field of a plasma-confining and heat device, e.g., Pyrotron. The device particularly comprises a cylindrical housing containing two stationary, cylindrical contacts between which a movable contact is bridged to close the switch. The movable contact is actuated by a differential-pressure, airdriven piston assembly also within the housing. To absorb the acceleration (and the shock imparted to the device by the rapidly driven, movable contact), an adjustable air buffer assembly is provided, integrally connected to the movable contact and piston assembly. Various safety locks and circuit-synchronizing means are also provided to permit proper cooperation of the invention and the high-current circuit in which it is installed. (AEC)

  15. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    DOE Patents [OSTI]

    Cooper, James A.

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  16. Microfabricated triggered vacuum switch

    DOE Patents [OSTI]

    Roesler, Alexander W. (Tijeras, NM); Schare, Joshua M. (Albuquerque, NM); Bunch, Kyle (Albuquerque, NM)

    2010-05-11

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  17. Novel Hybrid Materials with High Stability for Electrically Switched Ion Exchange: Carbon Nanotubes/Polyaniline/Nickel Hexacyanoferrate Nanocomposites

    SciTech Connect (OSTI)

    Lin, Yuehe; Cui, Xiaoli

    2005-04-21

    A novel and stable carbon nanotubes /polyaniline /nickel hexacyanoferrates composite film has been synthesized with electrodeposition method, and the possibility for removing cesium through an electrically switched ion exchange has been evaluated in a mixture containing NaNO3 and CsNO3.

  18. Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

    SciTech Connect (OSTI)

    Jong Choi, Hyung; Won Park, Suk; Deok Han, Gwon; Hyung Shim, Joon; Na, Junhong; Kim, Gyu-Tae

    2014-06-16

    Strontium titanate (STO) thin films 90?nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800?C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

  19. Understanding the structure and structural degradation mechanisms in high-voltage lithium-ion battery cathode oxides. A review of materials diagnostics

    SciTech Connect (OSTI)

    Mohanty, Debasish; Li, Jianlin; Nagpure, Shrikant C; Wood, III, David L; Daniel, Claus

    2015-12-21

    Materials diagnostic techniques are the principal tools used in the development of low-cost, high-performance electrodes for next-generation lithium-based energy storage technologies. Also, this review highlights the importance of materials diagnostic techniques in unraveling the structure and the structural degradation mechanisms in high-voltage, high-capacity oxides that have the potential to be implemented in high-energy-density lithium-ion batteries for transportation that can use renewable energy and is less-polluting than today. The rise in CO2 concentration in the earth’s atmosphere due to the use of petroleum products in vehicles and the dramatic increase in the cost of gasoline demand the replacement of current internal combustion engines in our vehicles with environmentally friendly, carbon free systems. Therefore, vehicles powered fully/partially by electricity are being introduced into today’s transportation fleet. As power requirements in all-electric vehicles become more demanding, lithium-ion battery (LiB) technology is now the potential candidate to provide higher energy density. Moreover, discovery of layered high-voltage lithium-manganese–rich (HV-LMR) oxides has provided a new direction toward developing high-energy-density LiBs because of their ability to deliver high capacity (~250 mA h/g) and to be operated at high operating voltage (~4.7 V). Unfortunately, practical use of HV-LMR electrodes is not viable because of structural changes in the host oxide during operation that can lead to fundamental and practical issues. This article provides the current understanding on the structure and structural degradation pathways in HV-LMR oxides, and manifests the importance of different materials diagnostic tools to unraveling the key mechanism(s). Furthermore, the fundamental insights reported, might become the tools to manipulate the chemical and/or structural aspects of HV-LMR oxides for low cost, high-energy-density LiB applications.

  20. Understanding the structure and structural degradation mechanisms in high-voltage lithium-ion battery cathode oxides. A review of materials diagnostics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mohanty, Debasish; Li, Jianlin; Nagpure, Shrikant C; Wood, III, David L; Daniel, Claus

    2015-01-01

    Materials diagnostic techniques are the principal tools used in the development of low-cost, high-performance electrodes for next-generation lithium-based energy storage technologies. Also, this review highlights the importance of materials diagnostic techniques in unraveling the structure and the structural degradation mechanisms in high-voltage, high-capacity oxides that have the potential to be implemented in high-energy-density lithium-ion batteries for transportation that can use renewable energy and is less-polluting than today. The rise in CO2 concentration in the earth’s atmosphere due to the use of petroleum products in vehicles and the dramatic increase in the cost of gasoline demand the replacement of current internalmore » combustion engines in our vehicles with environmentally friendly, carbon free systems. Therefore, vehicles powered fully/partially by electricity are being introduced into today’s transportation fleet. As power requirements in all-electric vehicles become more demanding, lithium-ion battery (LiB) technology is now the potential candidate to provide higher energy density. Moreover, discovery of layered high-voltage lithium-manganese–rich (HV-LMR) oxides has provided a new direction toward developing high-energy-density LiBs because of their ability to deliver high capacity (~250 mA h/g) and to be operated at high operating voltage (~4.7 V). Unfortunately, practical use of HV-LMR electrodes is not viable because of structural changes in the host oxide during operation that can lead to fundamental and practical issues. This article provides the current understanding on the structure and structural degradation pathways in HV-LMR oxides, and manifests the importance of different materials diagnostic tools to unraveling the key mechanism(s). Furthermore, the fundamental insights reported, might become the tools to manipulate the chemical and/or structural aspects of HV-LMR oxides for low cost, high-energy-density LiB applications.« less

  1. Hybrid high direct current circuit interrupter

    DOE Patents [OSTI]

    Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

    1998-08-11

    A device and a method are disclosed for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens. 7 figs.

  2. Hybrid high direct current circuit interrupter

    DOE Patents [OSTI]

    Rockot, Joseph H.; Mikesell, Harvey E.; Jha, Kamal N.

    1998-01-01

    A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

  3. Differentially-charged and sequentially-switched square-wave pulse forming network

    DOE Patents [OSTI]

    North, G.G.; Vogilin, G.E.

    1980-04-01

    Disclosed is a pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form. 5 figs.

  4. Differentially-charged and sequentially-switched square-wave pulse forming network

    DOE Patents [OSTI]

    North, George G. [Stockton, CA; Vogilin, George E. [Livermore, CA

    1980-04-01

    A pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form.

  5. Synthesis of polymer nanostructures with conductance switching properties

    DOE Patents [OSTI]

    Su, Kai; Nuraje, Nurxat; Zhang, Lingzhi; Matsui, Hiroshi; Yang, Nan Loh

    2015-03-03

    The present invention is directed to crystalline organic polymer nanoparticles comprising a conductive organic polymer; wherein the crystalline organic polymer nanoparticles have a size of from 10 nm to 200 nm and exhibits two current-voltage states: (1) a high resistance current-voltage state, and (2) a low resistance current-voltage state, wherein when a first positive threshold voltage (V.sub.th1) or higher positive voltage, or a second negative threshold voltage (V.sub.th2) or higher negative voltage is applied to the nanoparticle, the nanoparticle exhibits the low-resistance current-voltage state, and when a voltage less positive than the first positive threshold voltage or a voltage less negative than the second negative threshold voltage is applied to the nanoparticle, the nanoparticle exhibits the high-resistance current-voltage state. The present invention is also directed methods of manufacturing the nanoparticles using novel interfacial oxidative polymerization techniques.

  6. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, Dario B.

    1994-01-01

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination.

  7. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, D.B.

    1994-07-19

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination. 9 figs.

  8. Stable nonlinear Mach-Zehnder fiber switch

    DOE Patents [OSTI]

    Digonnet, Michel J. F.; Shaw, H. John; Pantell, Richard H.; Sadowski, Robert W.

    1999-01-01

    An all-optical fiber switch is implemented within a short Mach-Zehnder interferometer configuration. The Mach-Zehnder switch is constructed to have a high temperature stability so as to minimize temperature gradients and other thermal effects which result in undesirable instability at the output of the switch. The Mach-Zehnder switch of the preferred embodiment is advantageously less than 2 cm in length between couplers to be sufficiently short to be thermally stable, and full switching is accomplished by heavily doping one or both of the arms between the couplers so as to provide a highly nonlinear region within one or both of the arms. A pump input source is used to affect the propagation characteristics of one of the arms to control the output coupling ratio of the switch. Because of the high nonlinearity of the pump input arm, low pump powers can be used, thereby alleviating difficulties and high cost associated with high pump input powers.

  9. Section IV.D.3 for DOE 2013 Annual Report: Novel Phosphazene-based Compounds to Enhance Safety and Stability of Cell Chemistries for High Voltage Applications (INL)

    SciTech Connect (OSTI)

    Kevin L. Gering; Mason K. Harrup; Eric J. Dufek; Sergiy V. Sazhin; Harry W. Rollins; David K. Jamison; Fred F. Stewart; John Burba

    2013-09-01

    Electrolytes play a central role in performance and aging in most electrochemical systems. As automotive and grid applications place a higher reliance on electrochemical stored energy, it becomes more urgent to have electrolyte components that enable optimal battery performance while promoting battery safety and longevity. Safety remains a foremost concern for widespread utilization of Li-ion technology in electric-drive vehicles, especially as the focus turns to higher voltage systems (5V). This work capitalizes on the long established INL expertise regarding phosphazene chemistry, aimed at battery-viable compounds for electrolytes and electrodes that are highly tolerant to abusive conditions. This report showcases our 2013 work for the DOE applied battery research (ABR) program, wherein testing results are summarized for INL electrolytes and alternative anode materials.

  10. Charging a Battery-Powered Device with a Fiber-Optically Connected Photonic Power System for Achieving High-Voltage Isolation

    SciTech Connect (OSTI)

    Lizon, David C; Gioria, Jack G; Dale, Gregory E; Snyder, Hans R

    2008-01-01

    This paper describes the development and testing of a system to provide isolated power to the cathode-subsystem electronics of an x-ray tube. These components are located at the cathode potential of several hundred kilovolts, requiring a supply of power isolated from this high voltage. In this design a fiber-optically connected photonic power system (PPS) is used to recharge a lithium-ion battery pack, which will subsequently supply power to the cathode-subsystem electronics. The suitability of the commercially available JDSU PPS for this application is evaluated. The output of the ppe converter is characterized. The technical aspects of its use for charging a variety of Li-Ion batteries are discussed. Battery charge protection requirements and safety concerns are also addressed.

  11. Fundamental science investigations to develop a 6-MV laser triggered gas switch for ZR: first annual report.

    SciTech Connect (OSTI)

    Warne, Larry Kevin; Van Den Avyle, James A.; Lehr, Jane Marie; Rose, David; Krompholz, Hermann G.; Vela, Russell; Jorgenson, Roy Eberhardt; Timoshkin, Igor (University of Strathclyde, Glasgow, Scotland); Woodworth, Joseph Ray; Prestwich, Kenneth Randel (Voss Scientific, Albuquerque, NM); Krile, John; Given, Martin (University of Strathclyde, Glasgow, Scotland); McKee, G. Randall; Rosenthal, Stephen Edgar; Struve, Kenneth William; Welch, Dale Robert (Voss Scientific, Albuquerque, NM); Benwell, Andrew L. (University of Missouri-Columbia, Columbia, Missouri); Kovaleski, Scott; LeChien, Keith, R.; Johnson, David (Titan Pulse Sciences Division); Fouracre, R.A. (University of Strathclyde, Glasgow, Scotland); Yeckel, Chris (University of Missouri-Columbia, Columbia, Missouri); Wakeland, Peter Eric; Miller, A. R. (Titan Pulse Sciences Division); Hodge, Keith Conquest (Ktech Corporation, Albuquerque, NM); Pasik, Michael Francis; Savage, Mark Edward; Maenchen, John Eric; Curry, Randy D.; Feltz, Greg; Bliss, David Emery; MacGregor, Scott (University of Strathclyde, Glasgow, Scotland); Corley, J. P. (Ktech Corporation, Albuquerque, NM); Anaya, Victor (Ktech Corporation, Albuquerque, NM); Wallace, Zachariah (Ktech Corporation, Albuquerque, NM); Thoma, Carsten (Voss Scientific, Albuquerque, NM); Neuber, Andreas. (Texas Tech University, Lubbock, TX)

    2007-03-01

    In October 2005, an intensive three-year Laser Triggered Gas Switch (LTGS) development program was initiated to investigate and solve observed performance and reliability issues with the LTGS for ZR. The approach taken has been one of mission-focused research: to revisit and reassess the design, to establish a fundamental understanding of LTGS operation and failure modes, and to test evolving operational hypotheses. This effort is aimed toward deploying an initial switch for ZR in 2007, on supporting rolling upgrades to ZR as the technology can be developed, and to prepare with scientific understanding for the even higher voltage switches anticipated needed for future high-yield accelerators. The ZR LTGS was identified as a potential area of concern quite early, but since initial assessments performed on a simplified Switch Test Bed (STB) at 5 MV showed 300-shot lifetimes on multiple switch builds, this component was judged acceptable. When the Z{sub 20} engineering module was brought online in October 2003 frequent flashovers of the plastic switch envelope were observed at the increased stresses required to compensate for the programmatically increased ZR load inductance. As of October 2006, there have been 1423 Z{sub 20} shots assessing a variety of LTGS designs. Numerous incremental and fundamental switch design modifications have been investigated. As we continue to investigate the LTGS, the basic science of plastic surface tracking, laser triggering, cascade breakdown, and optics degradation remain high-priority mission-focused research topics. Significant progress has been made and, while the switch does not yet achieve design requirements, we are on the path to develop successively better switches for rolling upgrade improvements to ZR. This report summarizes the work performed in FY 2006 by the large team. A high-level summary is followed by detailed individual topical reports.

  12. Latching relay switch assembly

    DOE Patents [OSTI]

    Duimstra, Frederick A.

    1991-01-01

    A latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes at least one permanent magnet and at least one electromagnet. The respective sections are, generally, arranged in separate locations or cavities in the assembly. The switch is latched by a permanent magnet assembly and selectively switched by an overriding electromagnetic assembly.

  13. Wide-range voltage modulation

    SciTech Connect (OSTI)

    Rust, K.R.; Wilson, J.M.

    1992-06-01

    The Superconducting Super Collider`s Medium Energy Booster Abort (MEBA) kicker modulator will supply a current pulse to the abort magnets which deflect the proton beam from the MEB ring into a designated beam stop. The abort kicker will be used extensively during testing of the Low Energy Booster (LEB) and the MEB rings. When the Collider is in full operation, the MEBA kicker modulator will abort the MEB beam in the event of a malfunction during the filling process. The modulator must generate a 14-{mu}s wide pulse with a rise time of less than 1 {mu}s, including the delay and jitter times. It must also be able to deliver a current pulse to the magnet proportional to the beam energy at any time during ramp-up of the accelerator. Tracking the beam energy, which increases from 12 GeV at injection to 200 GeV at extraction, requires the modulator to operate over a wide range of voltages (4 kV to 80 kV). A vacuum spark gap and a thyratron have been chosen for test and evaluation as candidate switches for the abort modulator. Modulator design, switching time delay, jitter and pre-fire data are presented.

  14. Double row loop-coil configuration for high-speed electrodynamic maglev suspension, guidance, propulsion and guideway directional switching

    DOE Patents [OSTI]

    He, Jianliang; Rote, Donald M.

    1996-01-01

    A stabilization and propulsion system comprising a series of loop-coils arranged in parallel rows wherein two rows combine to form one of two magnetic rails. Levitation and lateral stability are provided when the induced field in the magnetic rails interacts with the superconducting magnets mounted on the magnetic levitation vehicle. The loop-coils forming the magnetic rails have specified dimensions and a specified number of turns and by constructing differently these specifications, for one rail with respect to the other, the angle of tilt of the vehicle can be controlled during directional switching. Propulsion is provided by the interaction of a traveling magnetic wave associated with the coils forming the rails and the super conducting magnets on the vehicle.

  15. Double row loop-coil configuration for high-speed electrodynamic maglev suspension, guidance, propulsion and guideway directional switching

    DOE Patents [OSTI]

    He, J.; Rote, D.M.

    1996-05-21

    A stabilization and propulsion system are disclosed comprising a series of loop-coils arranged in parallel rows wherein two rows combine to form one of two magnetic rails. Levitation and lateral stability are provided when the induced field in the magnetic rails interacts with the superconducting magnets mounted on the magnetic levitation vehicle. The loop-coils forming the magnetic rails have specified dimensions and a specified number of turns and by constructing differently these specifications, for one rail with respect to the other, the angle of tilt of the vehicle can be controlled during directional switching. Propulsion is provided by the interaction of a traveling magnetic wave associated with the coils forming the rails and the superconducting magnets on the vehicle. 12 figs.

  16. Radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, Gordon E.

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  17. Eliminate Voltage Unbalance

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Voltage unbalance degrades the performance and shortens the life of a three-phase motor. ... in lower effciency, and motor overheating, which reduces winding insulation life. ...

  18. Voltage Control Technical Conference

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-08-Voltage-Control-Technical-Conference Sign In About | Careers | Contact | Investors | bpa.gov Search News & Us Expand News & Us Projects & Initiatives Expand Projects &...

  19. Eliminate Voltage Unbalance

    SciTech Connect (OSTI)

    Not Available

    2000-01-01

    This two-page abstract provides tips for plant managers on checking and monitoring motor voltage unbalance to improve performance and life-span of industrial motors.

  20. Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages

    DOE Patents [OSTI]

    Su, Gui-Jia [Knoxville, TN

    2005-11-29

    A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

  1. Latching micro optical switch

    DOE Patents [OSTI]

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  2. Voltage verification unit

    DOE Patents [OSTI]

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  3. Graphene-Polypyrrole Nanocomposite as a Highly Efficient and Low Cost Electrically Switched Ion Exchanger for Removing ClO4- from Wastewater

    SciTech Connect (OSTI)

    Zhang, Sheng; Shao, Yuyan; Liu, Jun; Aksay, Iihan A.; Lin, Yuehe

    2011-10-10

    Perchlorate (ClO4-) contamination is now recognized as a widespread concern affecting many water utilities. In this report, graphene is employed as the scaffold to synthesize novel graphene-polypyrrole nanocomposite, which is demonstrated as excellent electrically switched ion exchanger for perchlorate removal. Scanning electron microscopy (SEM) and electrochemical measurements showed that the 3D nanostructured graphene/Ppy nanocomposite exhibited the significantly improved uptake capacity for ClO4- compared with Ppy film. X-ray photoelectron spectroscopy (XPS) confirmed the uptake and release process of ClO4- in graphene/Ppy nanocomposite. In addition, the presence of graphene substrate resulted in high stability of graphene/Ppy nanocomposite during potential cycling. The present work provides a promising method for large scale water treatment.

  4. Nanoeletromechanical switch and logic circuits formed therefrom

    DOE Patents [OSTI]

    Nordquist, Christopher D.; Czaplewski, David A.

    2010-05-18

    A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

  5. Electronically commutated serial-parallel switching for motor windings

    DOE Patents [OSTI]

    Hsu, John S. (Oak Ridge, TN)

    2012-03-27

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  6. Vehicle Technologies Office Merit Review 2014: High Energy Density Li-ion Cells for EV’s Based on Novel, High Voltage Cathode Material Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Farasis Energy, Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high energy density Li...

  7. Vehicle Technologies Office Merit Review 2015: High Energy Density Li-ion Cells for EV’s Based on Novel, High Voltage Cathode Material Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Farasis at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high energy density Li-ion cells for...

  8. REMOTE CONTROLLED SWITCHING DEVICE

    DOE Patents [OSTI]

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  9. Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

    SciTech Connect (OSTI)

    Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun

    2013-12-15

    Graphical abstract: - Highlights: The resistive switching characteristics of WN{sub x} thin films. Excellent CMOS compatibility WN{sub x} films as a resistive switching material. Resistive switching mechanism revealed trap-controlled space charge limited conduction. Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately 2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

  10. High open-circuit voltage small-molecule p-DTS(FBTTh 2 )2.ICBA bulk heterojunction solar cells – morphology, excited-state dynamics, and photovoltaic performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ko Kyaw, Aung Ko; Gehrig, Dominik; Zhang, Jie; Huang, Ye; Bazan, Guillermo C.; Laquai, Frédéric; Nguyen, Thuc -Quyen

    2014-11-27

    The photovoltaic performance of bulk heterojunction solar cells using the solution-processable small molecule donor 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[c][1,2,5]thiadiazole) (p-DTS(FBTTh2)2 in combination with indene-C60 bis-adduct (ICBA) as an acceptor is systematically optimized by altering the processing conditions. A high open-circuit voltage of 1 V, more than 0.2 V higher than that of a p-DTS(FBTTh2)2:PC70BM blend, is achieved. However, the power conversion efficiency remains around 5% and thus is lower than ~8% previously reported for p-DTS(FBTTh2)2:PC70BM. Transient absorption (TA) pump–probe spectroscopy over a wide spectral (Vis-NIR) and dynamic (fs to μs) range in combination with multivariate curve resolution analysis of the TA data reveals thatmore » generation of free charges is more efficient in the blend with PC70BM as an acceptor. In contrast, blends with ICBA create more coulombically bound interfacial charge transfer (CT) states, which recombine on the sub-nanosecond timescale by geminate recombination. Furthermore, the ns to μs charge carrier dynamics in p-DTS(FBTTh2)2:ICBA blends are only weakly intensity dependent implying a significant contribution of recombination from long-lived CT states and trapped charges, while those in p-DTS(FBTTh2)2:PC70BM decay via an intensity-dependent recombination mechanism indicating that spatially separated (free) charge carriers are observed, which can be extracted as photocurrent from the device.« less

  11. Data center coolant switch

    SciTech Connect (OSTI)

    Iyengar, Madhusudan K.; Parida, Pritish R.; Schultz, Mark D.

    2015-10-06

    A data center cooling system is operated in a first mode; it has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during the first mode. The first heat transfer fluid is a relatively high performance heat transfer fluid (as compared to the second fluid), and has a first heat transfer fluid freezing point. A determination is made that an appropriate time has been reached to switch from the first mode to a second mode. Based on this determination, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid, as compared to the first heat transfer fluid. It has a second heat transfer fluid freezing point lower than the first heat transfer fluid freezing point, and the second heat transfer fluid freezing point is sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

  12. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect (OSTI)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ?40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  13. Strategies for Voltage Control and Transient Stability Assessment

    SciTech Connect (OSTI)

    Hiskens, Ian A.

    2013-09-25

    As wind generation grows, its influence on power system performance will becoming increasingly noticeable. Wind generation di#11;ffers from traditional forms of generation in numerous ways though, motivating the need to reconsider the usual approaches to power system assessment and performance enhancement. The project has investigated the impact of wind generation on transient stability and voltage control, identifying and addressing issues at three distinct levels of the power system: 1) at the device level, the physical characteristics of wind turbine generators (WTGs) are quite unlike those of synchronous machines, 2) at the wind-farm level, the provision of reactive support is achieved through coordination of numerous dissimilar devices, rather than straightforward generator control, and 3) from a systems perspective, the location of wind-farms on the sub-transmission network, coupled with the variability inherent in their power output, can cause complex voltage control issues. The project has sought to develop a thorough understanding of the dynamic behaviour of type-3 WTGs, and in particular the WECC generic model. The behaviour of such models is governed by interactions between the continuous dynamics of state variables and discrete events associated with limits. It was shown that these interactions can be quite complex, and may lead to switching deadlock that prevents continuation of the trajectory. Switching hysteresis was proposed for eliminating deadlock situations. Various type-3 WTG models include control blocks that duplicate integrators. It was shown that this leads to non-uniqueness in the conditions governing steady-state, and may result in pre- and post-disturbance equilibria not coinciding. It also gives rise to a zero eigenvalue in the linearized WTG model. In order to eliminate the anomalous behaviour revealed through this investigation, WECC has now released a new generic model for type-3 WTGs. Wind-farms typically incorporate a variety of voltage control equipment including tapchanging transformers, switched capacitors, SVCs, STATCOMs and the WTGs themselves. The project has considered the coordinated control of this equipment, and has addressed a range of issues that arise in wind-farm operation. The #12;first concerns the ability of WTGs to meet reactive power requirements when voltage saturation in the collector network restricts the reactive power availability of individual generators. Secondly, dynamic interactions between voltage regulating devices have been investigated. It was found that under certain realistic conditions, tap-changing transformers may exhibit instability. In order to meet cost, maintenance, fault tolerance and other requirements, it is desirable for voltage control equipment to be treated as an integrated system rather than as independent devices. The resulting high-level scheduling of wind-farm reactive support has been investigated. In addressing this control problem, several forms of future information were considered, including exact future knowledge and stochastic predictions. Deterministic and Stochastic Dynamic Programming techniques were used in the development of control algorithms. The results demonstrated that while exact future knowledge is very useful, simple prediction methods yield little bene#12;fit. The integration of inherently variable wind generation into weak grids, particularly subtransmission networks that are characterized by low X=R ratios, aff#11;ects bus voltages, regulating devices and line flows. The meshed structure of these networks adds to the complexity, especially when wind generation is distributed across multiple nodes. A range of techniques have been considered for analyzing the impact of wind variability on weak grids. Sensitivity analysis, based on the power-flow Jacobian, was used to highlight sections of a system that are most severely a#11;ffected by wind-power variations. A continuation power flow was used to determine parameter changes that reduce the impact of wind-power variability. It was also used to explore interactions between multiple wind-farms. Furthermore, these tools have been used to examine the impact of wind injection on transformer tap operation in subtransmission networks. The results of a tap operation simulation study show that voltage regulation at wind injection nodes increases tap change operations. The tradeo#11;ff between local voltage regulation and tap change frequency is fundamentally important in optimizing the size of reactive compensation used for voltage regulation at wind injection nodes. Line congestion arising as a consequence of variable patterns of wind-power production has also been investigated. Two optimization problems have been formulated, based respectively on the DC and AC power flow models, for identifying vulnerable line segments. The DC optimization is computationally more e#14;fficient, whereas the AC sensitivity-based optimization provides greater accuracy.

  14. Multilevel cascade voltage source inverter with seperate DC sources...

    Office of Scientific and Technical Information (OSTI)

    This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line ...

  15. Effective switching frequency multiplier inverter

    DOE Patents [OSTI]

    Su, Gui-Jia (Oak Ridge, TN); Peng, Fang Z. (Okemos, MI)

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  16. Electron launching voltage monitor

    DOE Patents [OSTI]

    Mendel, Clifford W.; Savage, Mark E.

    1992-01-01

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors.

  17. Electron launching voltage monitor

    DOE Patents [OSTI]

    Mendel, C.W.; Savage, M.E.

    1992-03-17

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors. 5 figs.

  18. Alarm toe switch

    DOE Patents [OSTI]

    Ganyard, Floyd P.

    1982-01-01

    An alarm toe switch inserted within a shoe for energizing an alarm circuit n a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch. The reed switch is hermetically sealed with the magnet acting through the wall so the switch assembly S is capable of reliable operation even in wet and corrosive environments.

  19. Insight into the Atomic Structure of High-Voltage Spinel LiNi0.5Mn1.5O4 Cathode Material in the First Cycle

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Huang, Xuejie; Yu, Xiqian; Lin, Mingxiang; Ben, Liubin; Sun, Yang; Wang, Hao; Yang, Zhenzhong; Gu, Lin; Yang, Xiao -Qing; Zhao, Haofei; et al

    2014-12-22

    Application of high-voltage spinel LiNi0.5Mn1.5O4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi0.5Mn1.5O4 cathode material. Although it is well-known that the structure of LiNi0.5Mn1.5O4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations ofmore » local atomic-level and average structure of LiNi0.5Mn1.5O4 during first cycle (3.5–4.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi0.5Mn1.5O4//Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi0.5Mn1.5O4 particles show migration of TM ions into tetrahedral Li sites to form a Mn3O4-like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi0.5Mn1.5O4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi0.5Mn1.5O4 structure to obtain better electrochemical performance.« less

  20. Fundamental Frequency Switching Control of Seven-Level Hybrid Cascaded H-bridge Multilevel Inverter

    SciTech Connect (OSTI)

    Du, Zhong; Chiasson, John N; Ozpineci, Burak; Tolbert, Leon M

    2009-01-01

    This paper presents a cascaded H-bridge multilevel inverter that can be implemented using only a single dc power source and capacitors. Standard cascaded multilevel inverters require n dc sources for 2n + 1 levels. Without requiring transformers, the scheme proposed here allows the use of a single dc power source (e.g., a battery or a fuel cell stack) with the remaining n-1 dc sources being capacitors, which is referred to as hybrid cascaded H-bridge multilevel inverter (HCMLI) in this paper. It is shown that the inverter can simultaneously maintain the dc voltage level of the capacitors and choose a fundamental frequency switching pattern to produce a nearly sinusoidal output. HCMLI using only a single dc source for each phase is promising for high-power motor drive applications as it significantly decreases the number of required dc power supplies, provides high-quality output power due to its high number of output levels, and results in high conversion efficiency and low thermal stress as it uses a fundamental frequency switching scheme. This paper mainly discusses control of seven-level HCMLI with fundamental frequency switching control and how its modulation index range can be extended using triplen harmonic compensation.

  1. Electro-optical voltage sensor head

    DOE Patents [OSTI]

    Woods, Gregory K.

    1998-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  2. Electro-optical voltage sensor head

    DOE Patents [OSTI]

    Woods, G.K.

    1998-03-24

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 6 figs.

  3. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, Jon S. (Albuquerque, NM); Hietala, Vincent M. (Placitas, NM); Hohenwarter, Gert K. G. (Madison, WI)

    1994-01-01

    A HTS switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time.

  4. Advanced Soft Switching Inverter for Reducing Switching and Power Losses |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses 2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. PDF icon ape011_lai_2010_o.pdf More Documents & Publications Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for

  5. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, Martin S.

    1984-01-01

    A high-repetition rate switch for delivering short duration, high-power electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  6. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, M.S.

    1982-05-19

    A high-repetition rate switch is described for delivering short duration, high-powered electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  7. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect (OSTI)

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  8. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters Electro-...

  9. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters ...

  10. PROJECT PROFILE: Enabling High Penetration of Distributed Photovoltaics through the Optimization of Sub-Transmission Voltage Regulation (SuNLaMP)

    Broader source: Energy.gov [DOE]

    This project will develop a coordinated real-time sub-transmission volt-var control tool (CReST-VCT) to optimize the use of reactive power control devices for stabilizing voltage fluctuations caused by intermittent photovoltaic (PV) outputs. In order to capture the full value of the volt-var optimization, the project team will couple this tool with an optimal future sub-transmission volt-var planning tool (OFuST-VPT) for short- and long-term planning analyses. Together, these real-time control and planning tools will remove a major roadblock in the increased penetrations of utility scale and residential PV.

  11. SPARK GAP SWITCH

    DOE Patents [OSTI]

    Neal, R.B.

    1957-12-17

    An improved triggered spark gap switch is described, capable of precisely controllable firing time while switching very large amounts of power. The invention in general comprises three electrodes adjustably spaced and adapted to have a large potential impressed between the outer electrodes. The central electrode includes two separate elements electrically connected togetaer and spaced apart to define a pair of spark gaps between the end electrodes. Means are provided to cause the gas flow in the switch to pass towards the central electrode, through a passage in each separate element, and out an exit disposed between the two separate central electrode elements in order to withdraw ions from the spark gap.

  12. Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

    DOE Patents [OSTI]

    Mar, Alan (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo (Albuquerque, NM)

    2007-02-06

    An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

  13. Multiprocessor switch with selective pairing

    DOE Patents [OSTI]

    Gara, Alan; Gschwind, Michael K; Salapura, Valentina

    2014-03-11

    System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or processor cores that provide one highly reliable thread for high-reliability connect with a system components such as a memory "nest" (or memory hierarchy), an optional system controller, and optional interrupt controller, optional I/O or peripheral devices, etc. The memory nest is attached to a selective pairing facility via a switch or a bus

  14. An optical switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Hunter, S.R.

    1987-04-30

    The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

  15. Enhanced open voltage of BiFeO{sub 3} polycrystalline film by surface modification of organolead halide perovskite

    SciTech Connect (OSTI)

    Zhao, Pengjun; Bian, Liang; Xu, Jinbao Chang, Aimin; Wang, Lei

    2014-07-07

    Inorganic-organolead halide perovskite CH{sub 3}NH{sub 3}PbI{sub 3} modified BiFeO{sub 3} polycrystalline film has been established. The composite photoelectrode presents much larger open voltage and several magnitudes superior photoelectric conversion performance in comparison to the ordinary BiFeO{sub 3} polycrystalline film. The I-V curve shows that the short-circuit current (J{sub sc}) is 1.74?mAcm{sup ?2} and open-circuit voltage (V{sub oc}) is 1.62?V, the device's photon to current efficiency is over 1%. The large open voltage and high photovoltaic efficiency is believed to attributed to the spontaneous polarization of composite perovskite induced by BiFeO{sub 3} lattice and modified reduced work function of the modified BiFeO{sub 3} surface. Our results clearly show that the present BiFeO{sub 3}-CH{sub 3}NH{sub 3}PbI{sub 3} planar device is capable to generate a large voltage in macro scale under visible light, leading an approach to further applications on photodetectors and optoelectronic switch.

  16. A radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  17. Electro-optic voltage sensor for sensing voltage in an E-field

    DOE Patents [OSTI]

    Woods, Gregory K.; Renak, Todd W.

    1999-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  18. Electro-optic voltage sensor for sensing voltage in an E-field

    DOE Patents [OSTI]

    Woods, G.K.; Renak, T.W.

    1999-04-06

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 18 figs.

  19. Thermionic gas switch

    DOE Patents [OSTI]

    Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

    1984-04-05

    The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

  20. Multiple switch actuator

    DOE Patents [OSTI]

    Beyer, Edward T.

    1976-01-06

    The present invention relates to switches and switch actuating devices to be operated for purposes of arming a bomb or other missile as it is dropped or released from an aircraft. The particular bomb or missile in which this invention is applied is one in which there is a plurality of circuits which are to be armed by the closing of switches upon dropping or releasing of the bomb. The operation of the switches to closed position is normally accomplished by means of a pull-out wire; that is, a wire which is withdrawn from the bomb or missile at the time of release of the bomb, one end of the wire being attached to the aircraft. The conditions to be met are that the arming switches must be positively and surely maintained in open position until the bomb is released and the arming action is effected. The action of the pull-out wire in achieving the arming action must be sure and positive with minimum danger of malfunctioning, jamming or binding.

  1. Sequential circuit design for radiation hardened multiple voltage integrated circuits

    DOE Patents [OSTI]

    Clark, Lawrence T.; McIver, III, John K.

    2009-11-24

    The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

  2. Voltage Vehicles | Open Energy Information

    Open Energy Info (EERE)

    distributor specializing in the full spectrum of electric vehicles (EV) and full-performance alternative fuel vehicles (AFV). References: Voltage Vehicles1 This article is a...

  3. Current-level triggered plasma-opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W.

    1989-01-01

    An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field.

  4. Current-level triggered plasma-opening switch

    DOE Patents [OSTI]

    Mendel, C.W.

    1987-06-29

    An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field. 5 figs.

  5. Laser activated diffuse discharge switch (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Laser activated diffuse discharge switch Title: Laser activated diffuse discharge switch The invention is a gas mixture for a diffuse discharge switch which is capable of changing ...

  6. Dedication of Ethernet Switch | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dedication of Ethernet Switch Dedication of Ethernet Switch A presentation of how Nuclear Logistics Inc. performed CGD on the RuggedCom Ethernet Switches. The presentation lays out ...

  7. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 2 Materials

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  8. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 3 Electrochemistry

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  9. Vehicle Technologies Office Merit Review 2015: Enabling High-Energy/Voltage Lithium-Ion Cells for Transportation Applications: Part 1 Baseline Protocols and Analysis

    Broader source: Energy.gov [DOE]

    Presentation given by Argonne National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about enabling high...

  10. Multilevel cascade voltage source inverter with seperate DC sources...

    Office of Scientific and Technical Information (OSTI)

    This inverter is applicable to high voltage, high power applications such as flexible AC ... Report Number(s): US RE37126 DOE Contract Number: AC05-84OR21400 Resource Type: Patent ...

  11. Voltage sensor and dielectric material

    DOE Patents [OSTI]

    Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

    2006-10-17

    A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

  12. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    SciTech Connect (OSTI)

    Manipatruni, Sasikanth Nikonov, Dmitri E.; Young, Ian A.

    2014-05-07

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

  13. Optical fiber switch

    DOE Patents [OSTI]

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  14. Plasma opening switch

    DOE Patents [OSTI]

    Savage, Mark E.; Mendel, Jr., Clifford W.

    2001-01-01

    A command triggered plasma opening switch assembly using an amplification stage. The assembly surrounds a coaxial transmission line and has a main plasma opening switch (POS) close to the load and a trigger POS upstream from the main POS. The trigger POS establishes two different current pathways through the assembly depended on whether it has received a trigger current pulse. The initial pathway has both POS's with plasma between their anodes and cathodes to form a short across the transmission line and isolating the load. The final current pathway is formed when the trigger POS receives a trigger current pulse which energizes its fast coil to push the conductive plasma out from between its anode and cathode, allowing the main transmission line current to pass to the fast coil of the main POS, thus pushing its plasma out the way so as to establish a direct current pathway to the load.

  15. Automatic switching matrix

    DOE Patents [OSTI]

    Schlecht, Martin F.; Kassakian, John G.; Caloggero, Anthony J.; Rhodes, Bruce; Otten, David; Rasmussen, Neil

    1982-01-01

    An automatic switching matrix that includes an apertured matrix board containing a matrix of wires that can be interconnected at each aperture. Each aperture has associated therewith a conductive pin which, when fully inserted into the associated aperture, effects electrical connection between the wires within that particular aperture. Means is provided for automatically inserting the pins in a determined pattern and for removing all the pins to permit other interconnecting patterns.

  16. LOW VOLTAGE 14 Mev NEUTRON SOURCE

    DOE Patents [OSTI]

    Little, R.N. Jr.; Graves, E.R.

    1959-09-29

    An apparatus yielding high-energy neutrons at the rate of 10/sup 8/ or more per second by the D,T or D,D reactions is described. The deuterium gas filling is ionized by electrons emitted from a filament, and the resulting ions are focused into a beam and accelerated against a fixed target. The apparatus is built in accordance with the relationship V/sub s/ = A--B log pd, where V/sub s/ is the sparking voltage, p the gas pressure, and d the gap length between the high voltage electrodes. Typical parameters to obtain the high neutron yields are 55 to 80 kv, 0.5 to 7.0 ma beam current, 5 to 12 microns D/sub 2/, and a gap length of 1 centimeter.

  17. Low voltage nonprimary explosive detonator

    DOE Patents [OSTI]

    Dinegar, Robert H.; Kirkham, John

    1982-01-01

    A low voltage, electrically actuated, nonprimary explosive detonator is disclosed wherein said detonation is achieved by means of an explosive train in which a deflagration-to-detonation transition is made to occur. The explosive train is confined within a cylindrical body and positioned adjacent to low voltage ignition means have electrical leads extending outwardly from the cylindrical confining body. Application of a low voltage current to the electrical leads ignites a self-sustained deflagration in a donor portion of the explosive train which then is made to undergo a transition to detonation further down the train.

  18. Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

    SciTech Connect (OSTI)

    Ohno, Takeo; Samukawa, Seiji

    2015-04-27

    Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 25?nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2?V and multilevel switching operation.

  19. Monitoring Current, Voltage and Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Monitoring Current, Voltage and Power in Photovoltaic Systems Anton Driesse 1 , Joshua S. Stein 2 , Daniel Riley 2 , Craig Carmignani 2 1 PV Performance Labs, Freiburg, Germany 2 Sandia National Laboratories, Albuquerque, New Mexico Abstract - Accurate photovoltaic system performance monitoring is critical for profitable long-term operation. Irradiance, temperature, power, current and voltage signals contain rapid fluctuations that are not observable by typical monitoring systems. Nevertheless

  20. Tailoring the surface properties of LiNi0.4Mn0.4Co0.2O? by titanium substitution for improved high voltage cycling performance

    SciTech Connect (OSTI)

    Wolff-Goodrich, Silas; Xin, Huolin L.; Lin, Feng; Markus, Isaac M.; Nordlund, Dennis; Asta, Mark; Doeff, Marca M.

    2015-07-30

    The present research aims to provide insights into the behavior of LiNi0.4Mn0.4Co0.2O2 (NMC442) and LiNi0.4Mn0.4Co0.2O? (NMC442-Ti02) cathode materials under galvanostatic cycling to high potentials, in the context of previous work which predicted that Ti-substituted variants should deliver higher capacities and exhibit better cycling stability than the unsubstituted compounds. It is found that NMC cathodes containing Ti show equivalent capacity fading but greater specific capacity than those without Ti in the same potential range. When repeatedly charged to the same degree of delithiation, NMC cathodes containing Ti showed better capacity retention. Soft x-ray absorption spectroscopy (XAS) spectra for Mn and Co indicated increased reduction in these elements for NMC cathodes without Ti, indicating that the substitution of Ti for Co acts to suppress the formation of a high impedance rock salt phase at the surface of NMC cathode particles. The results of this study validate the adoption of a facile change to existing NMC chemistries to improve cathode capacity retention under high voltage cycling conditions.

  1. Tailoring the surface properties of LiNi0.4Mn0.4Co0.2O₂ by titanium substitution for improved high voltage cycling performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wolff-Goodrich, Silas; Xin, Huolin L.; Lin, Feng; Markus, Isaac M.; Nordlund, Dennis; Asta, Mark; Doeff, Marca M.

    2015-07-30

    The present research aims to provide insights into the behavior of LiNi0.4Mn0.4Co0.2O2 (NMC442) and LiNi0.4Mn0.4Co0.2O₂ (NMC442-Ti02) cathode materials under galvanostatic cycling to high potentials, in the context of previous work which predicted that Ti-substituted variants should deliver higher capacities and exhibit better cycling stability than the unsubstituted compounds. It is found that NMC cathodes containing Ti show equivalent capacity fading but greater specific capacity than those without Ti in the same potential range. When repeatedly charged to the same degree of delithiation, NMC cathodes containing Ti showed better capacity retention. Soft x-ray absorption spectroscopy (XAS) spectra for Mn and Comore » indicated increased reduction in these elements for NMC cathodes without Ti, indicating that the substitution of Ti for Co acts to suppress the formation of a high impedance rock salt phase at the surface of NMC cathode particles. The results of this study validate the adoption of a facile change to existing NMC chemistries to improve cathode capacity retention under high voltage cycling conditions.« less

  2. A Multilevel Voltage-Source Inverter with Separate DC Sources

    Office of Scientific and Technical Information (OSTI)

    Multilevel Voltage-Source Inverter with Separate DC Sources for Static Var Generation Fang Zheng Peng University of Tennessee, Knoxville Oak Ridge National Laboratory Oak Ridge, Tennessee 37831-7258 Phone: 615-576-7261 P.O. BOX 2003, K-l008F, M / S 7258 Abstract - A new multilevel voltage-source inverter with separate dc sources is proposed for high-voltage, high-power applications, such as flexible ac transmission systems (FACTS) including static var generation (SVG), power line conditioning,

  3. Neutron activated switch

    DOE Patents [OSTI]

    Barton, David M.

    1991-01-01

    A switch for reacting quickly to a neutron emission. A rod consisting of fissionable material is located inside a vacuum tight body. An adjustable contact is located coaxially at an adjustable distance from one end of the rod. Electrical leads are connected to the rod and to the adjustable contact. With a vacuum drawn inside the body, a neutron bombardment striking the rod causes it to heat and expand longitudinally until it comes into contact with the adjustable contact. This circuit closing occurs within a period of a few microseconds.

  4. NREL: Measurements and Characterization - Current Versus Voltage

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of devices, including: open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF), maximum power output of the device (Pmax), voltage at maximum power...

  5. Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

    DOE Patents [OSTI]

    Turner, Steven Richard

    2006-12-26

    A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

  6. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  7. Sensor Switch's Bright Manufacturing Future

    Broader source: Energy.gov [DOE]

    The switch helps with cost effective energy savings by turning off the lights when an occupancy sensor says the room is empty.

  8. Switch LLC | Open Energy Information

    Open Energy Info (EERE)

    Maryland Zip: 20886 Sector: Solar Product: Installer and distributor of small-scale solar passive, PV, fuel cell, and other distributed energy systems. References: Switch...

  9. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    SciTech Connect (OSTI)

    Prevosto, L.; Mancinelli, B.; Kelly, H.; Instituto de Fsica del Plasma , Departamento de Fsica, Facultad de Ciencias Exactas y Naturales Ciudad Universitaria Pab. I, 1428 Buenos Aires

    2013-12-15

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 0.07 eV (= 11400 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  10. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

    SciTech Connect (OSTI)

    Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

    2014-05-26

    We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

  11. High Voltage Electrolyte for Lithium Batteries

    Broader source: Energy.gov [DOE]

    2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  12. High Voltage Electrolyte for Lithium Batteries

    Broader source: Energy.gov [DOE]

    2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

  13. Battery switch for downhole tools

    DOE Patents [OSTI]

    Boling, Brian E.

    2010-02-23

    An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

  14. "Smart" watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, James W.

    1991-01-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals.

  15. ''Smart'' watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, J.W.

    1991-10-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals. 21 figures.

  16. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton On Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY); Gara, Alan G. (Mount Kisco, NY); Giampapa, Mark E. (Irvington, NY); Heidelberger, Philip (Cortlandt Manor, NY); Steinmacher-Burow, Burkhard D. (Mount Kisco, NY); Takken, Todd E. (Mount Kisco, NY); Vranas, Pavlos M. (Bedford Hills, NY)

    2007-12-04

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  17. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.

    2010-02-23

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  18. FAST OPENING SWITCH

    DOE Patents [OSTI]

    Bender, M.; Bennett, F.K.; Kuckes, A.F.

    1963-09-17

    A fast-acting electric switch is described for rapidly opening a circuit carrying large amounts of electrical power. A thin, conducting foil bridges a gap in this circuit and means are provided for producing a magnetic field and eddy currents in the foil, whereby the foil is rapidly broken to open the circuit across the gap. Advantageously the foil has a hole forming two narrow portions in the foil and the means producing the magnetic field and eddy currents comprises an annular coil having its annulus coaxial with the hole in the foil and turns adjacent the narrow portions of the foil. An electrical current flows through the coil to produce the magnetic field and eddy currents in the foil. (AEC)

  19. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    SciTech Connect (OSTI)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  20. Electro-optic voltage sensor head

    DOE Patents [OSTI]

    Crawford, T.M.; Davidson, J.R.; Woods, G.K.

    1999-08-17

    The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers. 6 figs.

  1. Electro-optic voltage sensor head

    DOE Patents [OSTI]

    Crawford, Thomas M.; Davidson, James R.; Woods, Gregory K.

    1999-01-01

    The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers.

  2. Eliminate Voltage Unbalance | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Voltage Unbalance Eliminate Voltage Unbalance Voltage unbalance degrades the performance and shortens the life of a three-phase motor. Voltage unbalance at the motor terminals can cause current unbalance that is far out of proportion to the voltage unbalance. Unbalanced currents lead to torque pulsations, increased vibrations and mechanical stresses, increased losses resulting in lower efficiency, and motor overheating, which reduces winding insulation life. This tip sheet provides suggested

  3. Electro-optic voltage sensor with Multiple Beam Splitting

    DOE Patents [OSTI]

    Woods, Gregory K.; Renak, Todd W.; Crawford, Thomas M.; Davidson, James R.

    2000-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  4. Electro-optic voltage sensor with beam splitting

    DOE Patents [OSTI]

    Woods, Gregory K.; Renak, Todd W.; Davidson, James R.; Crawford, Thomas M.

    2002-01-01

    The invention is a miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware typically found in the prior art. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  5. Dielectric liquid pulsed-power switch

    DOE Patents [OSTI]

    Christophorou, Loucas G.; Faidas, Homer

    1990-01-01

    This disclosure identifies dielectric liquids for use as opening and closing switching media in pulsed power technology, and describes a dielectric-liquid-pulsed-power switch empolying flashlamps.

  6. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Carter, J.G.; Hunter, S.R.

    1982-08-31

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF/sub 4/, C/sub 2/F/sub 6/, C/sub 3/F/sub 8/, n-C/sub 4/F/sub 10/, WF/sub 6/, (CF/sub 3/)/sub 2/S and (CF/sub 3/)/sub 2/O.

  7. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Carter, James G. (Knoxville, TN); Hunter, Scott R. (Oak Ridge, TN)

    1984-01-01

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, n-C.sub.4 F.sub.10, WF.sub.6, (CF.sub.3).sub.2 S and (CF.sub.3).sub.2 O.

  8. Alarm toe switch. [Patent application

    DOE Patents [OSTI]

    Ganyard, F.P.

    1980-11-18

    An alarm toe switch inserted within a shoe for energizing an alarm circuit in a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch.

  9. High dynamic range charge measurements

    DOE Patents [OSTI]

    De Geronimo, Gianluigi

    2012-09-04

    A charge amplifier for use in radiation sensing includes an amplifier, at least one switch, and at least one capacitor. The switch selectively couples the input of the switch to one of at least two voltages. The capacitor is electrically coupled in series between the input of the amplifier and the input of the switch. The capacitor is electrically coupled to the input of the amplifier without a switch coupled therebetween. A method of measuring charge in radiation sensing includes selectively diverting charge from an input of an amplifier to an input of at least one capacitor by selectively coupling an output of the at least one capacitor to one of at least two voltages. The input of the at least one capacitor is operatively coupled to the input of the amplifier without a switch coupled therebetween. The method also includes calculating a total charge based on a sum of the amplified charge and the diverted charge.

  10. Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

    DOE Patents [OSTI]

    Bittner, John W.; Biscardi, Richard W.

    1991-01-01

    An electronic measurement circuit for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals.

  11. Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

    DOE Patents [OSTI]

    Bittner, J.W.; Biscardi, R.W.

    1991-03-19

    An electronic measurement circuit is disclosed for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals. 2 figures.

  12. Advanced Soft Switching Inverter for Reducing Switching and Power Losses |

    Broader source: Energy.gov (indexed) [DOE]

    Department of Energy 9 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. PDF icon ape_06_lai.pdf More Documents & Publications Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters

  13. Low impedance switch

    DOE Patents [OSTI]

    Hornig, Donald F.

    1976-01-01

    1. A low inductance switch comprising a pair of spaced apart, annularly shaped, plate members of conducting material supported in substantially parallel, insulated relationship, said plate members being provided with a plurality of radially extending, spoke-like extensions whereby said members may be connected into a plurality of electrical circuits, and an electrical discharge means connected across said spaced plate members for effecting the simultaneous closing of the electrical circuits connected thereto, said electrical discharge means including an elongated, sealed envelope which contains an ionizable gas and which is supported on one of said plate members with the major axis of said envelope extending generally perpendicular to the plane of said plate members, a pair of elongated, spaced apart, insulated electrodes supported within said envelope and extending axially thereof, one of said electrodes being connected to each of said plate members, and a third, firing or trigger electrode supported within said envelope intermediate said main electrodes and being insulated from said main electrodes.

  14. Prediction of Acoustic Noise in Switched Reluctance Motor Drives

    SciTech Connect (OSTI)

    Lin, CJ; Fahimi, B

    2014-03-01

    Prediction of acoustic noise distribution generated by electric machines has become an integral part of design and control in noise sensitive applications. This paper presents a fast and precise acoustic noise imaging technique for switched reluctance machines (SRMs). This method is based on distribution of radial vibration in the stator frame of the SRM. Radial vibration of the stator frame, at a network of probing points, is computed using input phase current and phase voltage waveforms. Sequentially, the acceleration of the probing network will be expanded to predict full acceleration on the stator frame surface, using which acoustic noise emission caused by the stator can be calculated using the boundary element method.

  15. IEEE 342 Node Low Voltage Networked Test System

    SciTech Connect (OSTI)

    Schneider, Kevin P.; Phanivong, Phillippe K.; Lacroix, Jean-Sebastian

    2014-07-31

    The IEEE Distribution Test Feeders provide a benchmark for new algorithms to the distribution analyses community. The low voltage network test feeder represents a moderate size urban system that is unbalanced and highly networked. This is the first distribution test feeder developed by the IEEE that contains unbalanced networked components. The 342 node Low Voltage Networked Test System includes many elements that may be found in a networked system: multiple 13.2kV primary feeders, network protectors, a 120/208V grid network, and multiple 277/480V spot networks. This paper presents a brief review of the history of low voltage networks and how they evolved into the modern systems. This paper will then present a description of the 342 Node IEEE Low Voltage Network Test System and power flow results.

  16. Voltage Regulator Chip: Power Supplies on a Chip

    SciTech Connect (OSTI)

    2010-09-01

    ADEPT Project: CPES at Virginia Tech is finding ways to save real estate on a computer's motherboard that could be used for other critical functions. Every computer processor today contains a voltage regulator that automatically maintains a constant level of electricity entering the device. These regulators contain bulky components and take up about 30% of a computer's motherboard. CPES at Virginia Tech is developing a voltage regulator that uses semiconductors made of gallium nitride on silicon (GaN-on-Si) and high-frequency soft magnetic material. These materials are integrated on a small, 3D chip that can handle the same amount of power as traditional voltage regulators at 1/10 the size and with improved efficiency. The small size also frees up to 90% of the motherboard space occupied by current voltage regulators.

  17. Spin switches for compact implementation of neuron and synapse

    SciTech Connect (OSTI)

    Quang Diep, Vinh Sutton, Brian; Datta, Supriyo; Behin-Aein, Behtash

    2014-06-02

    Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

  18. Control method for peak power delivery with limited DC-bus voltage

    DOE Patents [OSTI]

    Edwards, John; Xu, Longya; Bhargava, Brij B.

    2006-09-05

    A method for driving a neutral point-clamped multi-level voltage source inverter supplying a synchronous motor is provided. A DC current is received at a neutral point-clamped multi-level voltage source inverter. The inverter has first, second, and third output nodes. The inverter also has a plurality of switches. A desired speed of a synchronous motor connected to the inverter by the first second and third nodes is received by the inverter. The synchronous motor has a rotor and the speed of the motor is defined by the rotational rate of the rotor. A position of the rotor is sensed, current flowing to the motor out of at least two of the first, second, and third output nodes is sensed, and predetermined switches are automatically activated by the inverter responsive to the sensed rotor position, the sensed current, and the desired speed.

  19. Multiprocessor switch with selective pairing (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Multiprocessor switch with selective pairing Citation Details In-Document Search Title: Multiprocessor switch with selective pairing System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or

  20. Microwave pulse compression from a storage cavity with laser-induced switching

    DOE Patents [OSTI]

    Bolton, Paul R.

    1992-01-01

    A laser-induced switch and a multiple cavity configuration are disclosed for producing high power microwave pulses. The microwave pulses are well controlled in wavelength and timing, with a quick rise time and a variable shape and power of the pulse. In addition, a method of reducing pre-pulse leakage to a low level is disclosed. Microwave energy is directed coherently to one or more cavities that stores the energy in a single mode, represented as a standing wave pattern. In order to switch the stored microwave energy out of the main cavity and into the branch waveguide, a laser-actuated switch is provided for the cavity. The switch includes a laser, associated optics for delivering the beam into the main cavity, and a switching gas positioned at an antinode in the main cavity. When actuated, the switching gas ionizes, creating a plasma, which becomes reflective to the microwave energy, changing the resonance of the cavity, and as a result the stored microwave energy is abruptly switched out of the cavity. The laser may directly pre-ionize the switching gas, or it may pump an impurity in the switching gas to an energy level which switches when a pre-selected cavity field is attained. Timing of switching the cavities is controlled by varying the pathlength of the actuating laser beam. For example, the pathlengths may be adjusted to output a single pulse of high power, or a series of quick lower power pulses.

  1. Electrically Switched Cesium Ion Exchange

    SciTech Connect (OSTI)

    JPH Sukamto; ML Lilga; RK Orth

    1998-10-23

    This report discusses the results of work to develop Electrically Switched Ion Exchange (ESIX) for separations of ions from waste streams relevant to DOE site clean-up. ESIX combines ion exchange and electrochemistry to provide a selective, reversible method for radionuclide separation that lowers costs and minimizes secondary waste generation typically associated with conventional ion exchange. In the ESIX process, an electroactive ion exchange film is deposited onto. a high surface area electrode, and ion uptake and elution are controlled directly by modulating the potential of the film. As a result, the production of secondary waste is minimized, since the large volumes of solution associated with elution, wash, and regeneration cycles typical of standard ion exchange are not needed for the ESIX process. The document is presented in two parts: Part I, the Summary Report, discusses the objectives of the project, describes the ESIX concept and the approach taken, and summarizes the major results; Part II, the Technology Description, provides a technical description of the experimental procedures and in-depth discussions on modeling, case studies, and cost comparisons between ESIX and currently used technologies.

  2. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; Marinella, Matthew

    2015-09-08

    In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill outmore » a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.« less

  3. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

    SciTech Connect (OSTI)

    Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; Marinella, Matthew

    2015-09-08

    In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.

  4. Non-latching relay switch assembly

    DOE Patents [OSTI]

    Duimstra, Frederick A.

    1991-01-01

    A non-latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes a permanent magnet and an electromagnet. The respective sections are arranged in separate locations or cavities in the assembly. The switch has a "normal" position and is selectively switched by an overriding electromagnetic assembly. The switch returns to the "normal" position when the overriding electromagnetic assembly is inactive.

  5. VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR

    DOE Patents [OSTI]

    Scheele, P.F.

    1958-09-16

    This patent relates to transistor oscillators and in particular to those transistor oscillators whose frequencies vary according to controlling voltages. A principal feature of the disclosed transistor oscillator circuit resides in the temperature compensation of the frequency modulating stage by the use of a resistorthermistor network. The resistor-thermistor network components are selected to have the network resistance, which is in series with the modulator transistor emitter circuit, vary with temperature to compensate for variation in the parameters of the transistor due to temperature change.

  6. Insight into the Atomic Structure of High-Voltage Spinel LiNi0.5Mn1.5O4 Cathode Material in the First Cycle

    SciTech Connect (OSTI)

    Huang, Xuejie; Yu, Xiqian; Lin, Mingxiang; Ben, Liubin; Sun, Yang; Wang, Hao; Yang, Zhenzhong; Gu, Lin; Yang, Xiao -Qing; Zhao, Haofei; Yu, Richeng; Armand, Michel

    2014-12-22

    Application of high-voltage spinel LiNi0.5Mn1.5O4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi0.5Mn1.5O4 cathode material. Although it is well-known that the structure of LiNi0.5Mn1.5O4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations of local atomic-level and average structure of LiNi0.5Mn1.5O4 during first cycle (3.5–4.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi0.5Mn1.5O4//Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi0.5Mn1.5O4 particles show migration of TM ions into tetrahedral Li sites to form a Mn3O4-like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi0.5Mn1.5O4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi0.5Mn1.5O4 structure to obtain better electrochemical performance.

  7. Insight into the Atomic Structure of High-Voltage Spinel LiNi0.5Mn1.5O4 Cathode Material in the First Cycle

    SciTech Connect (OSTI)

    Huang, Xuejie; Yu, Xiqian; Lin, Mingxiang; Ben, Liubin; Sun, Yang; Wang, Hao; Yang, Zhenzhong; Gu, Lin; Yang, Xiao -Qing; Zhao, Haofei; Yu, Richeng; Armand, Michel

    2014-12-22

    Application of high-voltage spinel LiNi0.5Mn1.5O4 cathode material is the closest and the most realistic approach to meeting the midterm goal of lithium-ion batteries for electric vehicles (EVs) and plug-in hybrid electric vehicles (HEVs). However, this application has been hampered by long-standing issues, such as capacity degradation and poor first-cycle Coulombic efficiency of LiNi0.5Mn1.5O4 cathode material. Although it is well-known that the structure of LiNi0.5Mn1.5O4 into which Li ions are reversibly intercalated plays a critical role in the above issues, performance degradation related to structural changes, particularly in the first cycle, are not fully understood. Here, we report detailed investigations of local atomic-level and average structure of LiNi0.5Mn1.5O4 during first cycle (3.54.9 V) at room temperature. We observed two types of local atomic-level migration of transition metals (TM) ions in the cathode of a well-prepared LiNi0.5Mn1.5O4//Li half-cell during first charge via an aberration-corrected scanning transmission electron microscopy (STEM). Surface regions (~2 nm) of the cycled LiNi0.5Mn1.5O4 particles show migration of TM ions into tetrahedral Li sites to form a Mn3O4-like structure. However, subsurface regions of the cycled particles exhibit migration of TM ions into empty octahedral sites to form a rocksalt-like structure. The migration of these TM ions are closely related to dissolution of Ni/Mn ions and building-up of charge transfer impedance, which contribute significantly to the capacity degradation and the poor first-cycle Coulombic efficiency of spinel LiNi0.5Mn1.5O4 cathode material. Accordingly, we provide suggestions of effective stabilization of LiNi0.5Mn1.5O4 structure to obtain better electrochemical performance.

  8. High open-circuit voltage small-molecule p-DTS(FBTTh 2 )2.ICBA bulk heterojunction solar cells – morphology, excited-state dynamics, and photovoltaic performance

    SciTech Connect (OSTI)

    Ko Kyaw, Aung Ko; Gehrig, Dominik; Zhang, Jie; Huang, Ye; Bazan, Guillermo C.; Laquai, Frédéric; Nguyen, Thuc -Quyen

    2014-11-27

    The photovoltaic performance of bulk heterojunction solar cells using the solution-processable small molecule donor 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[c][1,2,5]thiadiazole) (p-DTS(FBTTh2)2 in combination with indene-C60 bis-adduct (ICBA) as an acceptor is systematically optimized by altering the processing conditions. A high open-circuit voltage of 1 V, more than 0.2 V higher than that of a p-DTS(FBTTh2)2:PC70BM blend, is achieved. However, the power conversion efficiency remains around 5% and thus is lower than ~8% previously reported for p-DTS(FBTTh2)2:PC70BM. Transient absorption (TA) pump–probe spectroscopy over a wide spectral (Vis-NIR) and dynamic (fs to μs) range in combination with multivariate curve resolution analysis of the TA data reveals that generation of free charges is more efficient in the blend with PC70BM as an acceptor. In contrast, blends with ICBA create more coulombically bound interfacial charge transfer (CT) states, which recombine on the sub-nanosecond timescale by geminate recombination. Furthermore, the ns to μs charge carrier dynamics in p-DTS(FBTTh2)2:ICBA blends are only weakly intensity dependent implying a significant contribution of recombination from long-lived CT states and trapped charges, while those in p-DTS(FBTTh2)2:PC70BM decay via an intensity-dependent recombination mechanism indicating that spatially separated (free) charge carriers are observed, which can be extracted as photocurrent from the device.

  9. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, Gordon E.

    1984-01-01

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

  10. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, G.E.

    1984-10-02

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

  11. Method for voltage-gated protein fractionation (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Method for voltage-gated protein fractionation Title: Method for voltage-gated protein fractionation We report unique findings on the voltage dependence of protein exclusion from ...

  12. Electro-optic voltage sensor for sensing voltage in an E-field

    DOE Patents [OSTI]

    Davidson, James R.; Crawford, Thomas M.; Seifert, Gary D.

    2002-03-26

    A miniature electro-optic voltage sensor and system capable of accurate operation at high voltages has a sensor body disposed in an E-field. The body receives a source beam of electromagnetic radiation. A polarization beam displacer separates the source light beam into two beams with orthogonal linear polarizations. A wave plate rotates the linear polarization to rotated polarization. A transducer utilizes Pockels electro-optic effect and induces a differential phase shift on the major and minor axes of the rotated polarization in response to the E-field. A prism redirects the beam back through the transducer, wave plate, and polarization beam displacer. The prism also converts the rotated polarization to circular or elliptical polarization. The wave plate rotates the major and minor axes of the circular or elliptical polarization to linear polarization. The polarization beam displacer separates the beam into two beams of orthogonal linear polarization representing the major and minor axes. The system may have a transmitter for producing the beam of electro-magnetic radiation; a detector for converting the two beams into electrical signals; and a signal processor for determining the voltage.

  13. The design and analysis of multi-megawatt distributed single pole double throw (SPDT) microwave switches

    SciTech Connect (OSTI)

    Tantawi, S.G. [Stanford Linear Accelerator Center, SLAC, 2575 Sand Hill Rd. Menlo Park, California 94025 (United States)

    1999-05-01

    We present design methodology and analysis for an SPDT switch that is capable of handling hundreds of megawatts of power at X-band. The switch is designed for application in high power rf systems in particular future Linear Colliders (1). In these systems switching need to be fast in one direction only. We use this to our advantage to reach a design for a super high power switch. In our analysis we treat the problem from an abstract point of view. We introduce a unified analysis for the microwave circuits irrespective of the switching elements. The analysis is, then, suitable for different kinds of switching elements such as photoconductrs. PIN diodes, and plasma discharge in low-pressure gases. {copyright} {ital 1999 American Institute of Physics.}

  14. Optical Switch Using Risley Prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2005-02-22

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  15. Optical switch using Risley prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2003-04-15

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  16. Bi-directional power control system for voltage converter

    DOE Patents [OSTI]

    Garrigan, Neil Richard; King, Robert Dean; Schwartz, James Edward

    1999-01-01

    A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals.

  17. Bi-directional power control system for voltage converter

    DOE Patents [OSTI]

    Garrigan, N.R.; King, R.D.; Schwartz, J.E.

    1999-05-11

    A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals. 10 figs.

  18. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  19. Elastomeric organic material for switching application

    SciTech Connect (OSTI)

    Shiju, K. E-mail: pravymon@gmail.com Praveen, T. E-mail: pravymon@gmail.com Preedep, P. E-mail: pravymon@gmail.com

    2014-10-15

    Organic Electronic devices like OLED, Organic Solar Cells etc are promising as, cost effective alternatives to their inorganic counterparts due to various reasons. However the organic semiconductors currently available are not attractive with respect to their high cost and intricate synthesis protocols. Here we demonstrate that Natural Rubber has the potential to become a cost effective solution to this. Here an attempt has been made to fabricate iodine doped poly isoprene based switching device. In this work Poly methyl methacrylate is used as dielectric layer and Aluminium are employed as electrodes.

  20. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  1. Hybrid switch for resonant power converters (Patent) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Patent: Hybrid switch for resonant power converters Citation Details In-Document Search Title: Hybrid switch for resonant power converters A hybrid switch comprising two ...

  2. Resistance switching in epitaxial SrCoO{sub x} thin films

    SciTech Connect (OSTI)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3??}) depending on the oxygen content. The currentvoltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  3. New Switches for Utility-Scale Inverters: First In-Class Demonstration of a Completely New Type of SiC Bipolar Switch (15kV-20kV) for Utility-Scale Inverters

    SciTech Connect (OSTI)

    2011-12-31

    Solar ADEPT Project: The SiCLAB is developing a new power switch for utility-scale PV inverters that would improve the performance and significantly reduce the size, weight, and energy loss of PV systems. A power switch controls the electrical energy flowing through an inverter, which takes the electrical current from a PV solar panel and converts it into the type and amount of electricity that is compatible with the electric grid. SiCLAB is using silicon carbide (SiC) semiconductors in its new power switches, which are more efficient than the silicon semiconductors used to conduct electricity in most conventional power switches today. Switches with SiC semiconductors can operate at much higher temperatures, as well as higher voltage and power levels than silicon switches. SiC-based power switches are also smaller than those made with silicon alone, so they result in much smaller and lighter electrical devices. In addition to their use in utility-scale PV inverters, SiCLABs new power switches can also be used in wind turbines, railways, and other smart grid applications.

  4. Group 3: Humidity, Temperature, and Voltage (Presentation)

    SciTech Connect (OSTI)

    Wohlgemuth, J.

    2013-05-01

    Group 3 is chartered to develop accelerated stress tests that can be used as comparative predictors of module lifetime versus stresses associated with humidity, temperature and voltage.

  5. Spark gap switch with spiral gas flow

    DOE Patents [OSTI]

    Brucker, John P.

    1989-01-01

    A spark gap switch having a contaminate removal system using an injected gas. An annular plate concentric with an electrode of the switch defines flow paths for the injected gas which form a strong spiral flow of the gas in the housing which is effective to remove contaminates from the switch surfaces. The gas along with the contaminates is exhausted from the housing through one of the ends of the switch.

  6. Local Voltage Support from Distributed Energy Resources to Prevent Air Conditioner Motor Stalling

    SciTech Connect (OSTI)

    Baone, Chaitanya A; Xu, Yan; Kueck, John D

    2010-01-01

    Microgrid voltage collapse often happens when there is a high percentage of low inertia air-conditioning (AC) motors in the power systems. The stalling of the AC motors results in Fault Induced Delayed Voltage Recovery (FIDVR). A hybrid load model including typical building loads, AC motor loads, and other induction motor loads is built to simulate the motoring stalling phenomena. Furthermore, distributed energy resources (DE) with local voltage support capability are utilized to boost the local bus voltage during a fault, and prevent the motor stalling. The simulation results are presented. The analysis of the simulation results show that local voltage support from multiple DEs can effectively and economically solve the microgrid voltage collapse problem.

  7. Easily disassembled electrical connector for high voltage, high frequency connections

    DOE Patents [OSTI]

    Milner, Joseph R.

    1994-01-01

    An easily accessible electrical connector capable of rapid assembly and disassembly wherein a wide metal conductor sheet may be evenly contacted over the entire width of the conductor sheet by opposing surfaces on the connector which provide an even clamping pressure against opposite surfaces of the metal conductor sheet using a single threaded actuating screw.

  8. Easily disassembled electrical connector for high voltage, high frequency connections

    DOE Patents [OSTI]

    Milner, J.R.

    1994-05-10

    An easily accessible electrical connector capable of rapid assembly and disassembly is described wherein a wide metal conductor sheet may be evenly contacted over the entire width of the conductor sheet by opposing surfaces on the connector which provide an even clamping pressure against opposite surfaces of the metal conductor sheet using a single threaded actuating screw. 13 figures.

  9. High Temperature, High Voltage Fully Integrated Gate Driver Circuit

    Broader source: Energy.gov [DOE]

    2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

  10. High Temperature, High Voltage Fully Integrated Gate Driver Circuit

    Broader source: Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  11. 2.3-MW Medium-Voltage, Three-Level Wind Energy Inverter Applying a Unique Bus Structure and 4.5-kV Si/SiC Hybrid Isolated Power Modules: Preprint

    SciTech Connect (OSTI)

    Erdman, W.; Keller, J.; Grider, D.; VanBrunt, E.

    2014-11-01

    A high-efficiency, 2.3-MW, medium-voltage, three-level inverter utilizing 4.5-kV Si/SiC (silicon carbide) hybrid modules for wind energy applications is discussed. The inverter addresses recent trends in siting the inverter within the base of multimegawatt turbine towers. A simplified split, three-layer laminated bus structure that maintains low parasitic inductances is introduced along with a low-voltage, high-current test method for determining these inductances. Feed-thru bushings, edge fill methods, and other design features of the laminated bus structure provide voltage isolation that is consistent with the 10.4-kV module isolation levels. Inverter efficiency improvement is a result of the (essential) elimination of the reverse recovery charge present in 4.5-kV Si PIN diodes, which can produce a significant reduction in diode turn-off losses as well as insulated-gate bipolar transistor (IGBT) turn-on losses. The hybrid modules are supplied in industry-standard 140 mm x 130 mm and 190 mm x 130 mm packages to demonstrate direct module substitution into existing inverter designs. A focus on laminated bus/capacitor-bank/module subassembly level switching performance is presented.

  12. Digitally Controlled High Availability Power Supply

    SciTech Connect (OSTI)

    MacNair, David; /SLAC

    2008-09-25

    This paper reports the design and test results on novel topology, high-efficiency, and low operating temperature, 1,320-watt power modules for high availability power supplies. The modules permit parallel operation for N+1 redundancy with hot swap capability. An embedded DSP provides intelligent start-up and shutdown, output regulation, general control and fault detection. PWM modules in the DSP drive the FET switches at 20 to 100 kHz. The DSP also ensures current sharing between modules, synchronized switching, and soft start up for hot swapping. The module voltage and current have dedicated ADCs (>200 kS/sec) to provide pulse-by-pulse output control. A Dual CAN bus interface provides for low cost redundant control paths. Over-rated module components provide high reliability and high efficiency at full load. Low on-resistance FETs replace conventional diodes in the buck regulator. Saturable inductors limit the FET reverse diode current during switching. The modules operate in a two-quadrant mode, allowing bipolar output from complimentary module groups. Controllable, low resistance FETs at the input and output provide fault isolation and allow module hot swapping.

  13. Resistive switching and threshold switching behaviors in La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} ceramics

    SciTech Connect (OSTI)

    Wang, S. Y.; Qiu, Xue; Feng, Yu; Hou, X. G.; Yu, D. S.; Li, D. J.; Liu, W. F.; Gao, J.

    2012-08-01

    The effects of cobalt doping on the electrical conductivity of La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} (LBFCO, x = 0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 Degree-Sign C and 80 Degree-Sign C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.

  14. Voltage regulation in linear induction accelerators

    DOE Patents [OSTI]

    Parsons, William M.

    1992-01-01

    Improvement in voltage regulation in a Linear Induction Accelerator wherein a varistor, such as a metal oxide varistor, is placed in parallel with the beam accelerating cavity and the magnetic core. The non-linear properties of the varistor result in a more stable voltage across the beam accelerating cavity than with a conventional compensating resistance.

  15. Voltage regulation in linear induction accelerators

    DOE Patents [OSTI]

    Parsons, W.M.

    1992-12-29

    Improvement in voltage regulation in a linear induction accelerator wherein a varistor, such as a metal oxide varistor, is placed in parallel with the beam accelerating cavity and the magnetic core is disclosed. The non-linear properties of the varistor result in a more stable voltage across the beam accelerating cavity than with a conventional compensating resistance. 4 figs.

  16. Secure videoconferencing equipment switching system and method

    DOE Patents [OSTI]

    Hansen, Michael E.

    2009-01-13

    A switching system and method are provided to facilitate use of videoconference facilities over a plurality of security levels. The system includes a switch coupled to a plurality of codecs and communication networks. Audio/Visual peripheral components are connected to the switch. The switch couples control and data signals between the Audio/Visual peripheral components and one but nor both of the plurality of codecs. The switch additionally couples communication networks of the appropriate security level to each of the codecs. In this manner, a videoconferencing facility is provided for use on both secure and non-secure networks.

  17. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/?-Cr{sub 2}O{sub 3}/Pt stacked films

    SciTech Connect (OSTI)

    Toyoki, Kentaro; Shiratsuchi, Yu Kobane, Atsushi; Nakatani, Ryoichi; Mitsumata, Chiharu; Kotani, Yoshinori; Nakamura, Tetsuya

    2015-04-20

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/?-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  18. Switch for Good Community Program

    SciTech Connect (OSTI)

    Crawford, Tabitha; Amran, Martha

    2013-11-19

    Switch4Good is an energy-savings program that helps residents reduce consumption from behavior changes; it was co-developed by Balfour Beatty Military Housing Management (BB) and WattzOn in Phase I of this grant. The program was offered at 11 Navy bases. Three customer engagement strategies were evaluated, and it was found that Digital Nudges (a combination of monthly consumption statements with frequent messaging via text or email) was most cost-effective.

  19. Voltage controlled spintronic devices for logic applications

    DOE Patents [OSTI]

    You, Chun-Yeol; Bader, Samuel D.

    2001-01-01

    A reprogrammable logic gate comprising first and second voltage-controlled rotation transistors. Each transistor comprises three ferromagnetic layers with a spacer and insulating layer between the first and second ferromagnetic layers and an additional insulating layer between the second and third ferromagnetic layers. The third ferromagnetic layer of each transistor is connected to each other, and a constant external voltage source is applied to the second ferromagnetic layer of the first transistor. As input voltages are applied to the first ferromagnetic layer of each transistor, the relative directions of magnetization of the ferromagnetic layers and the magnitude of the external voltage determines the output voltage of the gate. By altering these parameters, the logic gate is capable of behaving as AND, OR, NAND, or NOR gates.

  20. Non-contact current and voltage sensor

    DOE Patents [OSTI]

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  1. Flexible method for monitoring fuel cell voltage

    DOE Patents [OSTI]

    Mowery, Kenneth D.; Ripley, Eugene V.

    2002-01-01

    A method for equalizing the measured voltage of each cluster in a fuel cell stack wherein at least one of the clusters has a different number of cells than the identical number of cells in the remaining clusters by creating a pseudo voltage for the different cell numbered cluster. The average cell voltage of the all of the cells in the fuel cell stack is calculated and multiplied by a constant equal to the difference in the number of cells in the identical cell clusters and the number of cells in the different numbered cell cluster. The resultant product is added to the actual voltage measured across the different numbered cell cluster to create a pseudo voltage which is equivalent in cell number to the number of cells in the other identical numbered cell clusters.

  2. Fast superconducting magnetic field switch

    DOE Patents [OSTI]

    Goren, Y.; Mahale, N.K.

    1996-08-06

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles. 6 figs.

  3. Fast superconducting magnetic field switch

    DOE Patents [OSTI]

    Goren, Yehuda; Mahale, Narayan K.

    1996-01-01

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

  4. Spark gap switch system with condensable dielectric gas

    DOE Patents [OSTI]

    Thayer, III, William J.

    1991-01-01

    A spark gap switch system is disclosed which is capable of operating at a high pulse rate comprising an insulated switch housing having a purging gas entrance port and a gas exit port, a pair of spaced apart electrodes each having one end thereof within the housing and defining a spark gap therebetween, an easily condensable and preferably low molecular weight insulating gas flowing through the switch housing from the housing, a heat exchanger/condenser for condensing the insulating gas after it exits from the housing, a pump for recirculating the condensed insulating gas as a liquid back to the housing, and a heater exchanger/evaporator to vaporize at least a portion of the condensed insulating gas back into a vapor prior to flowing the insulating gas back into the housing.

  5. Electron beam switched discharge for rapidly pulsed lasers

    DOE Patents [OSTI]

    Pleasance, Lyn D.; Murray, John R.; Goldhar, Julius; Bradley, Laird P.

    1981-01-01

    Method and apparatus for electrical excitation of a laser gas by application of a pulsed voltage across the gas, followed by passage of a pulsed, high energy electron beam through the gas to initiate a discharge suitable for laser excitation. This method improves upon current power conditioning techniques and is especially useful for driving rare gas halide lasers at high repetition rates.

  6. Advanced concepts for high power RF generation using solid state materials

    SciTech Connect (OSTI)

    Fazio, M.V.; Erickson, G.A. [Los Alamos National Laboratory (United States)

    1999-05-01

    Traditionally, high power radio frequency and microwave energy have been generated using electron beam driven hard-vacuum tubes such as klystrons and magnetrons. High-power solid-state sources of RF have not been available. It is well known that a non-linear, dispersive system can convert a pulse into an array of solitons. Although this effect has been exploited in the optical field, using non-linear optical materials, little work has been done in the field of high voltage electronics. It is the goal of this work, which is just beginning, to develop sources of RF in the few hundreds of megahertz to gigahertz range with power levels in the hundreds of megawatts to the gigawatt level. To generate solitons a high voltage pulse is fed onto a transmission line that is periodically loaded with a non-linear ceramic dielectric in the paraelectric phase. The combination of the non-linearity and dispersion causes the pulse to break up into an array of solitons. A soliton-based system has several components: the solid state, high voltage, high current switch to provide the initial high voltage pulse; a shock line to decrease the rise time of the initial pulse to less than a few nanoseconds; and the soliton generating transmission line where the high power RF is generated when driven by the fast rising pulse from the shock line. The approach and progress to date will be described. {copyright} {ital 1999 American Institute of Physics.}

  7. Intrinsic SiO{sub x}-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

    SciTech Connect (OSTI)

    Chang, Yao-Feng Chen, Ying-Chen; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Zhou, Fei; Lee, Jack C.; Fowler, Burt

    2014-07-28

    Multilevel programing and charge transport characteristics of intrinsic SiO{sub x}-based resistive switching memory are investigated using TaN/SiO{sub x}/n{sup ++}Si (MIS) and TiW/SiO{sub x}/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1?eV in the LRS and 0.6?eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ?1?nm in the LRS for both device structures. Relative permittivity values (?{sub r}) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where ?{sub r} values were ?80 in the LRS and ?4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed overshoot in the I-V response with an estimated threshold of 1.6??0.2?V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO{sub 2} defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the E?' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7?eV. The SET threshold at ?2.5?V is modeled as hydrogen release from the (Si-H){sub 2} defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (SiH){sub 2}. The results provide further insights into charge transport and help identify potential switching mechanisms in SiO{sub x}-based unipolar resistive switching memory.

  8. Halbach array generator/motor having an automatically regulated output voltage and mechanical power output

    DOE Patents [OSTI]

    Post, Richard F.

    2005-02-22

    A motor/generator having its stationary portion, i.e., the stator, positioned concentrically within its rotatable element, i.e., the rotor, along its axis of rotation. The rotor includes a Halbach array. The stator windings are switched or commutated to provide a DC motor/generator much the same as in a conventional DC motor/generator. The voltage and power are automatically regulated by using centrifugal force to change the diameter of the rotor, and thereby vary the radial gap in between the stator and the rotating Halbach array, as a function of the angular velocity of the rotor.

  9. The commercial development of water repellent coatings for high...

    Office of Scientific and Technical Information (OSTI)

    coatings for high voltage transmission lines Citation Details In-Document Search Title: The commercial development of water repellent coatings for high voltage transmission lines ...

  10. Large voltage-induced modification of spin-orbit torques in Pt/Co/GdOx

    SciTech Connect (OSTI)

    Emori, Satoru Bauer, Uwe; Woo, Seonghoon; Beach, Geoffrey S. D.

    2014-12-01

    We report on large modifications of current-induced spin-orbit torques in a gated Pt/Co/Gd-oxide microstrip due to voltage-driven O{sup 2−} migration. The Slonczewski-like and field-like torques are quantified using a low-frequency harmonic technique based on the polar magneto-optical Kerr effect. Voltage-induced oxidation of Co enhances the Slonczewski-like torque by as much as an order of magnitude and simultaneously reduces the anisotropy energy barrier by a factor of ∼5. Such magneto-ionic tuning of interfacial spin-orbit effects may significantly enhance the efficiency of magnetization switching and provide additional degrees of freedom in spintronic devices.

  11. SWITCHING TRANSMITTER POSITIONING OF SYNCHROS

    DOE Patents [OSTI]

    Wolff, H.

    1962-03-13

    A transformer apparatus is designed for effecting the step positioning of synchro motors. The apparatus is provided with ganged switches and pre- selected contacts to permit the units and tens selection of the desired angular position for the synchro motor rotor with only the movement of two selector knobs required. With the selection thus made, the appropriate pre-selected signal is delivered to the synchro motor for positioning the rotor of the latter as selected. The transformer apparatus is divided into smaller arrangements to conform with coraputed trigonometric relations which will give the desired results. (AEC)

  12. Laser-triggered vacuum switch

    DOE Patents [OSTI]

    Brannon, P.J.; Cowgill, D.F.

    1990-12-18

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable. 10 figs.

  13. Laser-triggered vacuum switch

    DOE Patents [OSTI]

    Brannon, Paul J.; Cowgill, Donald F.

    1990-01-01

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable.

  14. Optical switching system and method

    DOE Patents [OSTI]

    Ranganathan, Radha; Gal, Michael; Taylor, P. Craig

    1992-01-01

    An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

  15. Laser activated diffuse discharge switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Hunter, Scott R. (Oak Ridge, TN)

    1988-01-01

    The invention is a gas mixture for a diffuse discharge switch which is capable of changing from a conducting state to an insulating state in the presence of electrons upon the introduction of laser light. The mixture is composed of a buffer gas such as nitrogen or argon and an electron attaching gas such as C.sub.6 H.sub.5 SH, C.sub.6 H.sub.5 SCH.sub.3, CH.sub.3 CHO and CF.sub.3 CHO wherein the electron attachment is brought on by indirect excitation of molecules to long-lived states by exposure to laser light.

  16. Constant voltage electro-slag remelting control

    DOE Patents [OSTI]

    Schlienger, M.E.

    1996-10-22

    A system for controlling electrode gap in an electro-slag remelt furnace has a constant regulated voltage and an electrode which is fed into the slag pool at a constant rate. The impedance of the circuit through the slag pool is directly proportional to the gap distance. Because of the constant voltage, the system current changes are inversely proportional to changes in gap. This negative feedback causes the gap to remain stable. 1 fig.

  17. Constant voltage electro-slag remelting control

    DOE Patents [OSTI]

    Schlienger, Max E.

    1996-01-01

    A system for controlling electrode gap in an electro-slag remelt furnace has a constant regulated voltage and an eletrode which is fed into the slag pool at a constant rate. The impedance of the circuit through the slag pool is directly proportional to the gap distance. Because of the constant voltage, the system current changes are inversely proportional to changes in gap. This negative feedback causes the gap to remain stable.

  18. Spark gap with low breakdown voltage jitter

    DOE Patents [OSTI]

    Rohwein, Gerald J.; Roose, Lars D.

    1996-01-01

    Novel spark gap devices and electrodes are disclosed. The novel spark gap devices and electrodes are suitable for use in a variety of spark gap device applications. The shape of the electrodes gives rise to local field enhancements and reduces breakdown voltage jitter. Breakdown voltage jitter of approximately 5% has been measured in spark gaps according the invention. Novel electrode geometries and materials are disclosed.

  19. Spark gap with low breakdown voltage jitter

    DOE Patents [OSTI]

    Rohwein, G.J.; Roose, L.D.

    1996-04-23

    Novel spark gap devices and electrodes are disclosed. The novel spark gap devices and electrodes are suitable for use in a variety of spark gap device applications. The shape of the electrodes gives rise to local field enhancements and reduces breakdown voltage jitter. Breakdown voltage jitter of approximately 5% has been measured in spark gaps according the invention. Novel electrode geometries and materials are disclosed. 13 figs.

  20. Bonfire-safe low-voltage detonator

    DOE Patents [OSTI]

    Lieberman, Morton L. (Albuquerque, NM)

    1990-01-01

    A column of explosive in a low-voltage detonator which makes it bonfire-safe includes a first layer of an explosive charge of CP, or a primary explosive, and a second layer of a secondary organic explosive charge, such as PETN, which has a degradation temperature lower than the autoignition temperature of the CP or primary explosives. The first layer is composed of a pair of increments disposed in a bore of a housing of the detonator in an ignition region of the explosive column and adjacent to and in contact with an electrical ignition device at one end of the bore. The second layer is composed of a plurality of increments disposed in the housing bore in a transition region of the explosive column next to and in contact with the first layer on a side opposite from the ignition device. The first layer is loaded under a sufficient high pressure, 25 to 40 kpsi, to achieve ignition, whereas the second layer is loaded under a sufficient low pressure, about 10 kpsi, to allow occurrence of DDT. Each increment of the first and second layers has an axial length-to-diameter ratio of one-half.