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Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Embedding nano-silicon in graphene nanosheets by plasma assisted milling for high capacity anode materials in lithium ion batteries  

Science Journals Connector (OSTI)

Abstract The lithium storage performance of silicon (Si) is improved substantially by forming composite of nano-Si particles embedded homogeneously in graphene nanosheets (GNs) using a simple discharge plasma assisted milling (P-milling) method. The synergistic effect of the rapid heating of the plasma and the mechanical ball mill grinding with nano-Si as nanomiller converted the graphite powder to \\{GNs\\} with the integration of nano-Si particles in the in-situ formed GNs. This composite structure inhibits the agglomeration of nano-Si and improves electronic conductivity. The cycling stability and rate capability are enhanced, with a stable reversible capacity of 976 mAhg?1 at 50 mAg?1 for the P-milled 20 h nano-Si/GNs composite. A full cell containing a commercial LiMn2O4 cathode is assembled and demonstrated a satisfying utilization of the P-milled nano-Si/GNs composite anode with stable working potential. This composite shows promise for application in lithium ion batteries.

Wei Sun; Renzong Hu; Hui Liu; Meiqin Zeng; Lichun Yang; Haihui Wang; Min Zhu

2014-01-01T23:59:59.000Z

2

High Capacity Immobilized Amine Sorbents  

NLE Websites -- All DOE Office Websites (Extended Search)

Capacity Immobilized Amine Sorbents Capacity Immobilized Amine Sorbents Opportunity The Department of Energy's National Energy Technology Laboratory is seeking licensing partners interested in implementing United States Patent Number 7,288,136 entitled "High Capacity Immobilized Amine Sorbents." Disclosed in this patent is the invention of a method that facilitates the production of low-cost carbon dioxide (CO 2 ) sorbents for use in large-scale gas-solid processes. This method treats an amine to increase the number of secondary amine groups and impregnates the amine in a porous solid support. As a result of this improvement, the method increases CO 2 capture capacity and decreases the cost of using an amine-enriched solid sorbent in CO 2 capture systems. Overview The U.S. Department of Energy has placed a high priority on the separation

3

Design and Evaluation of Novel High Capacity Cathode Materials...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

High Capacity Cathodes Vehicle Technologies Office Merit Review 2014: Design and Evaluation of High Capacity Cathodes Design and Evaluation of Novel High Capacity Cathode Materials...

4

High capacity immobilized amine sorbents  

DOE Patents (OSTI)

A method is provided for making low-cost CO.sub.2 sorbents that can be used in large-scale gas-solid processes. The improved method entails treating an amine to increase the number of secondary amine groups and impregnating the amine in a porous solid support. The method increases the CO.sub.2 capture capacity and decreases the cost of utilizing an amine-enriched solid sorbent in CO.sub.2 capture systems.

Gray, McMahan L. (Pittsburgh, PA); Champagne, Kenneth J. (Fredericktown, PA); Soong, Yee (Monroeville, PA); Filburn, Thomas (Granby, CT)

2007-10-30T23:59:59.000Z

5

Development of High-Capacity Cathode Materials with Integrated...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Development of High-Capacity Cathode Materials with Integrated Structures Development of High-Capacity Cathode Materials with Integrated Structures 2013 DOE Hydrogen and Fuel Cells...

6

Design and Evaluation of Novel High Capacity Cathode Materials...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Design and Evaluation of Novel High Capacity Cathode Materials Design and Evaluation of Novel High Capacity Cathode Materials 2009 DOE Hydrogen Program and Vehicle Technologies...

7

Development of high-capacity cathode materials with integrated...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Development of high-capacity cathode materials with integrated structures Development of high-capacity cathode materials with integrated structures 2009 DOE Hydrogen Program and...

8

Design and Evaluation of Novel High Capacity Cathode Materials...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

and Evaluation of Novel High Capacity Cathode Materials Design and Evaluation of Novel High Capacity Cathode Materials 2011 DOE Hydrogen and Fuel Cells Program, and Vehicle...

9

Conductive Rigid Skeleton Supported Silicon as High-Performance...  

NLE Websites -- All DOE Office Websites (Extended Search)

Conductive Rigid Skeleton Supported Silicon as High-Performance Li-Ion Battery Anodes. Conductive Rigid Skeleton Supported Silicon as High-Performance Li-Ion Battery Anodes....

10

High index contrast platform for silicon photonics  

E-Print Network (OSTI)

This thesis focuses on silicon-based high index contrast (HIC) photonics. In addition to mature fiber optics or low index contrast (LIC) platform, which is often referred to as Planar Lightwave Cirrcuit (PLC) or Silica ...

Akiyama, Shoji, 1972-

2004-01-01T23:59:59.000Z

11

High-capacity hydrogen storage in lithium and sodium amidoboranes...  

NLE Websites -- All DOE Office Websites (Extended Search)

capacity hydrogen storage in lithium and sodium amidoboranes. High-capacity hydrogen storage in lithium and sodium amidoboranes. Abstract: A substantial effort worldwide has been...

12

Highly Efficient Silicon Light Emitting Diode  

E-Print Network (OSTI)

silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

13

The NASA CSTI High Capacity Power Program  

SciTech Connect

The SP-100 program was established in 1983 by DOD, DOE, and NASA as a joint program to develop the technology necessary for space nuclear power systems for military and civil applications. During 1986 and 1987, the NASA Advanced Technology Program was responsible for maintaining the momentum of promising technology advancement efforts started during Phase I of SP-100 and to strengthen, in key areas, the chances for successful development and growth capability of space nuclear reactor power systems for future space applications. In 1988, the NASA Advanced Technology Program was incorporated into NASA`s new Civil Space Technology Initiative (CSTI). The CSTI program was established to provide the foundation for technology development in automation and robotics, information, propulsion, and power. The CSTI High Capacity Power Program builds on the technology efforts of the SP-100 program, incorporates the previous NASA advanced technology project, and provides a bridge to the NASA exploration technology programs. The elements of CSTI high capacity power development include conversion systems - Stirling and thermoelectric, thermal management, power management, system diagnostics, and environmental interactions. Technology advancement in all areas, including materials, is required to provide the growth capability, high reliability and 7 to 10 years lifetime demanded for future space nuclear power systems. The overall program will develop and demonstrate the technology base required to provide a wide range of modular power systems while minimizing the impact of day/night operation as well as attitudes and distance from the Sun. Significant accomplishments in all of the program elements will be discussed, along with revised goals and project timelines recently developed.

Winter, J.M.

1994-09-01T23:59:59.000Z

14

High Q silicon carbide microdisk resonator  

SciTech Connect

We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12?×?10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Lee, Jonathan Y. [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Feng, Philip X.-L. [Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)

2014-05-05T23:59:59.000Z

15

Design and Evaluation of Novel High Capacity Cathode Materials  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Design and Evaluation of Novel High Capacity Cathode Materials Christopher Johnson and Michael Thackeray Chemical Sciences and Engineering Division, Argonne Annual Merit Review DOE...

16

Deposition method for producing silicon carbide high-temperature semiconductors  

DOE Patents (OSTI)

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

1987-01-01T23:59:59.000Z

17

Design and Evaluation of Novel High Capacity Cathode Materials...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

17johnson2011p.pdf More Documents & Publications Design and Evaluation of Novel High Capacity Cathode Materials Lithium Source For High Performance Li-ion Cells Lithium Source...

18

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

19

Developing High Capacity, Long Life Anodes  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

long life and improved Safety for PHEV and EV applications. Objectives Develop a low cost synthesis methods to prepare high energy anodes Full structural and...

20

High resolution amorphous silicon radiation detectors  

DOE Patents (OSTI)

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

Street, Robert A. (Palo Alto, CA); Kaplan, Selig N. (El Cerrito, CA); Perez-Mendez, Victor (Berkeley, CA)

1992-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

High resolution amorphous silicon radiation detectors  

DOE Patents (OSTI)

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

1992-05-26T23:59:59.000Z

22

High-Temperature Oxidation Resistance of Refractory Silicon Nitride—Silicon Carbide Materials  

Science Journals Connector (OSTI)

Silicon nitride and carbide are promising materials for use as refractories; they are highly resistant to mineral acids and alkalis, have a high melting point, and are thermally very stable [1].

I. N. Godovannaya; O. I. Popova

1972-01-01T23:59:59.000Z

23

Design and Evaluation of Novel High Capacity Cathode Materials...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

the reaction is, in turn, intercalated into the negative electrode (i.e. graphite, graphene composites, intermetallics, Si-C composites, high-capacity TiO 2 (B bronze), TiO 2...

24

High capacity stabilized complex hydrides for hydrogen storage  

DOE Patents (OSTI)

Complex hydrides based on Al(BH.sub.4).sub.3 are stabilized by the presence of one or more additional metal elements or organic adducts to provide high capacity hydrogen storage material.

Zidan, Ragaiy; Mohtadi, Rana F; Fewox, Christopher; Sivasubramanian, Premkumar

2014-11-11T23:59:59.000Z

25

Low cost routes to high purity silicon and derivatives thereof  

DOE Patents (OSTI)

The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon).

Laine, Richard M; Krug, David James; Marchal, Julien Claudius; Mccolm, Andrew Stewart

2013-07-02T23:59:59.000Z

26

HT Combinatorial Screening of Novel Materials for High Capacity Hydrogen Storage  

Energy.gov (U.S. Department of Energy (DOE))

Presentation for the high temperature combinatorial screening for high capacity hydrogen storage meeting

27

Polymers with Tailored Electronic Structure for High Capacity Lithium  

NLE Websites -- All DOE Office Websites (Extended Search)

Polymers with Tailored Electronic Structure for High Capacity Lithium Polymers with Tailored Electronic Structure for High Capacity Lithium Battery Electrodes Title Polymers with Tailored Electronic Structure for High Capacity Lithium Battery Electrodes Publication Type Journal Article Year of Publication 2011 Authors Liu, Gao, Shidi Xun, Nenad Vukmirovic, Xiangyun Song, Paul Olalde-Velasco, Honghe Zheng, Vince S. Battaglia, Linwang Wang, and Wanli Yang Journal Advanced Materials Volume 23 Start Page 4679 Issue 40 Pagination 4679 - 4683 Date Published 10/2011 Keywords binders, conducting polymers, density funcational theory, lithium batteries, X-ray spectroscopy Abstract A conductive polymer is developed for solving the long-standing volume change issue in lithium battery electrodes. A combination of synthesis, spectroscopy and simulation techniques tailors the electronic structure of the polymer to enable in situ lithium doping. Composite anodes based on this polymer and commercial Si particles exhibit 2100 mAh g-1 in Si after 650 cycles without any conductive additive.

28

The freezing tendency towards 4-coordinated amorphous network causes increase in heat capacity of supercooled Stillinger-Weber silicon  

E-Print Network (OSTI)

The supercooled liquid silicon, modeled by Stillinger-Weber potential, shows anomalous increase in heat capacity $C_p$, with a maximum $C_p$ value close to 1060 K at zero pressure. We study equilibration and relaxation of the supercooled SW Si, in the temperature range of 1060 K--1070 K at zero pressure. We find that as the relaxation of the metastable supercooled liquid phase initiates, a straight line region (SLR) is formed in cumulative potential energy distributions. The configurational temperature corresponding to the SLR is close to 1060 K, which was earlier identified as the freezing temperature of 4-coordinated amorphous network. The SLR is found to be tangential to the distribution of the metastable liquid phase and thus influences the broadness of the distribution. As the bath temperature is reduced from 1070 K to 1060 K, the effective temperature approaches the bath temperature which results in broadening of the metastable phase distribution. This, in turn, causes an increase in overall fluctuations of potential energy and hence an increase of heat capacity. We also find that during initial stages of relaxation, 4-coordinated atoms form 6-membered rings with a chair--like structure and other structural units that indicate crystallization. Simultaneously a strong correlation is established between the number of chair-shaped 6-membered rings and the number of 4-coordinated atoms in the system. This shows that all properties related to 4-coordinated particles are highly correlated as the SLR is formed in potential energy distributions and this can be interpreted as a consequence of `freezing' of amorphous network formed by 4-coordinated particles.

Pankaj A. Apte; Nandlal Pingua; Arvind Kumar Gautam; Uday Kumar; Soohaeng Yoo Willow; Xiao Cheng Zeng; B. D. Kulkarni

2014-04-10T23:59:59.000Z

29

Silicon nitride having a high tensile strength  

DOE Patents (OSTI)

A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

1998-06-02T23:59:59.000Z

30

Nano-scale Composite Hetero-structures: Novel High Capacity Reversible...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Nano-scale Composite Hetero-structures: Novel High Capacity Reversible Anodes for Lithium-ion Batteries Nano-scale Composite Hetero-structures: Novel High Capacity Reversible...

31

A High Efficiency Silicon Solar Cell Production Technology  

Science Journals Connector (OSTI)

BP Solar have developed a cost-effective production technology for the manufacture of high efficiency laser grooved buried grid (LGBG) crystalline silicon solar cells. The process has demonstrated 17–18% ... a ne...

N. B. Mason; D. Jordan; J. G. Summers

1991-01-01T23:59:59.000Z

32

Silicon detector for high rate EXAFS applications  

SciTech Connect

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at {minus}35 C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at {minus}35 C. At room temperature (25 C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Kraner, H.W.; Siddons, D.P.; Furenlid, L.R. [Brookhaven National Lab., Upton, NY (United States); Bertuccio, G. [Politecnico di Milano (Italy). Dipt. di Elettronica e Informazione

1995-08-01T23:59:59.000Z

33

Method of and apparatus for removing silicon from a high temperature sodium coolant  

DOE Patents (OSTI)

A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Yunker, Wayne H. (Richland, WA); Christiansen, David W. (Kennewick, WA)

1987-01-01T23:59:59.000Z

34

High-Capacity High-Energy Ball Mill for Nanophase Materials  

Science Journals Connector (OSTI)

A high-energy high-capacity ball mill, which can be easily ... scaled-up, for the synthesis of nanophase materials is described. The synthesis of nanophase iron...

Diego Basset; Paolo Matteazzi; Fabio Miani

1994-01-01T23:59:59.000Z

35

High-purity, isotopically enriched bulk silicon  

SciTech Connect

The synthesis and characterization of dislocation-free, undoped, single crystals of Si enriched in all 3 stable isotopes is reported: {sup 28}Si (99.92%), {sup 29}Si (91.37%), and {sup 30}Si (89.8%). A silane-based process compatible with the relatively small amounts of isotopically enriched precursors that are practically available was used. The silane is decomposed to silicon on a graphite starter rod heated to 700-750 C in a recirculating flow reactor. A typical run produces 35 gm of polycrystalline Si at a growth rates of 5 {micro}m/min and conversion efficiency >95%. Single crystals are grown by the floating zone method and characterized by electrical and optical measurements. Concentrations of shallow dopants (P and B) are as low as mid-10{sup 13} cm{sup -3}. Concentrations of C and O lie below 10{sup 16} and 10{sup 15} cm{sup -3}, respectively.

Ager III, J.W.; Beeman, J.W.; Hansen, W.L.; Haller, E.E.; Sharp, I.D.; Liao, C.; Yang, A.; Thewalt, M.L.W.; Riemann, H.

2004-11-17T23:59:59.000Z

36

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma  

E-Print Network (OSTI)

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency Semiconductor, Eden Prairie, MN, USA Received 10 July 2002; accepted 14 July 2002 Abstract Silicon carbide films; Nanomaterials; Silicon carbide; Thermal plasmas; Thin films; Si tetrachlorine precursor Silicon carbide has

Zachariah, Michael R.

37

Development of high-capacity cathode materials with integrated...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

to improve rate performance * Optimize composition (Li- and Mn composition) and synthesis conditions * Evaluation of electrochemical properties (capacity, cycling performance...

38

Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere  

SciTech Connect

A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

2014-05-27T23:59:59.000Z

39

The fabrication of high quality silicon junction detectors by low energy ion implantation  

Science Journals Connector (OSTI)

High quality silicon junction detectors have been made by implantation of boron and phosphorus ions into silicon wafers. Resolutions of 20 keV for Po ?-particles were obtained.

S. Kalbitzer; R. Bader; H. Herzer; K. Bethge

1967-01-01T23:59:59.000Z

40

Highly conductive p-type microcrystalline silicon thin films  

SciTech Connect

In the development of thin film solar cells there is presently an increasing interest in microcrystalline silicon, deposited at low temperatures (200--400 C). The plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm{sup {minus}1} were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Heintze, M.; Schmitt, M. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

1996-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

High-efficiency silicon concentrator cell commercialization  

SciTech Connect

This report summarizes the first phase of a forty-one month program to develop a commercial, high-efficiency concentrator solar cell and facility for manufacturing it. The period covered is November 1, 1990 to December 31, 1991. This is a joint program between the Electric Power Research Institute (EPRI) and Sandia National Laboratories. (This report is also published by EPRI as EPRI report number TR-102035.) During the first year of the program, SunPower accomplished the following major objectives: (1) a new solar cell fabrication facility, which is called the Cell Pilot Line (CPL), (2) a baseline concentrator cell process has been developed, and (3) a cell testing facility has been completed. Initial cell efficiencies are about 23% for the baseline process. The long-range goal is to improve this efficiency to 27%.

Sinton, R.A.; Swanson, R.M. [SunPower Corp., Sunnyvale, CA (US)

1993-05-01T23:59:59.000Z

42

High-efficiency concentrator silicon solar cells  

SciTech Connect

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01T23:59:59.000Z

43

Silicon Sensors for Trackers at High-Luminosity Environment  

E-Print Network (OSTI)

The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than the one of LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented.

Timo Peltola

2014-11-26T23:59:59.000Z

44

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents (OSTI)

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

1998-06-16T23:59:59.000Z

45

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells  

E-Print Network (OSTI)

. Figure 3-1 IV curve of a UT fabricated triple cell, showing 12.7% initial, active-area efficiency. Figure1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE I Annual-junction a-Si Solar Cells with Heavily Doped Thin Interface Layers at the Tunnel Junctions Section 4 High

Deng, Xunming

46

Nano-scale Composite Hetero-structures: Novel High Capacity Reversible...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

year (Phase 2) * Synthesis of high specific capacity anode - Novel Materials Synthesis * bulk crystalline Si, Nanocrystalline Si, Amorphous Si with carbon as a matrix * Nanorods,...

47

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces  

DOE Patents (OSTI)

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09T23:59:59.000Z

48

High Rate and High Capacity Li-Ion Electrodes for Vehicular Applications  

SciTech Connect

Significant advances in both energy density and rate capability for Li-ion batteries are necessary for implementation in electric vehicles. We have employed two different methods to improve the rate capability of high capacity electrodes. For example, we previously demonstrated that thin film high volume expansion MoO{sub 3} nanoparticle electrodes ({approx}2 {micro}m thick) have a stable capacity of {approx}630 mAh/g, at C/2 (charge/dicharge in 2 hours). By fabricating thicker conventional electrodes, an improved reversible capacity of {approx}1000 mAh/g is achieved, but the rate capability decreases. To achieve high-rate capability, we applied a thin Al{sub 2}O{sub 3} atomic layer deposition coating to enable the high volume expansion and prevent mechanical degradation. Also, we recently reported that a thin ALD Al{sub 2}O{sub 3} coating can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 C. Additionally, Al{sub 2}O{sub 3} ALD films with a thickness of 2 to 4 {angstrom} have been shown to allow LiCoO{sub 2} to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs. Li/Li{sup +}. Capacity fade at this high voltage is generally caused by oxidative decomposition of the electrolyte or cobalt dissolution. We have recently fabricated full cells of NG and LiCoO{sub 2} and coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. In a different approach we have employed carbon single-wall nanotubes (SWNTs) to synthesize binder-free, high-rate capability electrodes, with 95 wt.% active materials. In one case, Fe{sub 3}O{sub 4} nanorods are employed as the active storage anode material. Recently, we have also employed this method to demonstrate improved conductivity and highly improved rate capability for a LiNi{sub 0.4}Mn{sub 0.4}Co{sub 0.2}O{sub 2} cathode material. Raman spectroscopy was employed to understand how the SWNTs function as a highly flexible conductive additive.

Dillon, A. C.

2012-01-01T23:59:59.000Z

49

High Capacity Pouch-Type Li-air Batteries  

SciTech Connect

The pouch-type Li-air batteries operated in ambient condition are reported in this work. The battery used a heat sealable plastic membrane as package material, O2¬ diffusion membrane and moisture barrier. The large variation in internal resistance of the batteries is minimized by a modified separator which can bind the cell stack together. The cells using the modified separators show improved and repeatable discharge performances. It is also found that addition of about 20% of 1,2-dimethoxyethane (DME) in PC:EC (1:1) based electrolyte solvent improves can improve the wetability of carbon electrode and the discharge capacities of Li-air batteries, but further increase in DME amount lead to a decreased capacity due to increase electrolyte loss during discharge process. The pouch-type Li-air batteries with the modified separator and optimized electrolyte has demonstrated a specific capacity of 2711 mAh g-1 based on carbon and a specific energy of 344 Wh kg-1 based on the complete batteries including package.

Wang, Deyu; Xiao, Jie; Xu, Wu; Zhang, Jiguang

2010-05-05T23:59:59.000Z

50

High efficiency silicon nanohole/organic heterojunction hybrid solar cell  

SciTech Connect

High efficiency hybrid solar cells are fabricated based on silicon with a nanohole (SiNH) structure and poly (3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The SiNH structure is fabricated using electroless chemical etching with silver catalyst, and the heterojunction is formed by spin coating of PEDOT on the SiNH. The hybrid cells are optimized by varying the hole depth, and a maximum power conversion efficiency of 8.3% is achieved with a hole depth of 1??m. The SiNH hybrid solar cell exhibits a strong antireflection and light trapping property attributed to the sub-wavelength dimension of the SiNH structure.

Hong, Lei [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); Wang, Xincai; Zheng, Hongyu [Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); He, Lining; Wang, Hao; Rusli, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yu, Hongyu, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [South University of Science and Technology of China, Shenzhen (China)

2014-02-03T23:59:59.000Z

51

Silicon Photodiodes for High-Efficiency Low-Energy Electron Detection  

E-Print Network (OSTI)

Silicon Photodiodes for High-Efficiency Low-Energy Electron Detection Agata Saki, Lis K. Nanver, T--Solid-state electron detectors have been fabricated using a p+ n silicon photodiode where the p+ region is created near theoretical efficiency at high electron energies. The photodiodes have outstanding performance

Technische Universiteit Delft

52

STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS  

SciTech Connect

Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

2014-09-01T23:59:59.000Z

53

Design and Evaluation of Novel High Capacity Cathode Materials...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

surface and bulk stability of electrodes at high electrochemical potentials Use atomic-scale modeling as a guide to identify, design and understand the structural...

54

High efficiency neutron sensitive amorphous silicon pixel detectors  

SciTech Connect

A multi-layer a-Si:H based thermal neutron detector was designed, fabricated and simulated by Monte Carlo method. The detector consists of two PECVD deposited a-Si:H pin detectors interfaced with coated layers of Gd, as a thermal neutron converter. Simulation results indicate that a detector consisting of 2 Gd films with thicknesses of 2 and 4 {mu}m, sandwiched properly with two layers of sufficiently thick ({approximately}30{mu}m) amorphous silicon diodes, has the optimum parameters. The detectors have an intrinsic efficiency of about 42% at a threshold setting of 7000 electrons, with an expected average signal size of {approximately}12000 electrons which is well above the noise. This efficiency will be further increased to nearly 63%, if we use Gd with 50% enrichment in {sup 157}Gd. We can fabricate position sensitive detectors with spatial resolution of 300 {mu}m with gamma sensitivity of {approximately}1 {times} 10{sup {minus}5}. These detectors are highly radiation resistant and are good candidates for use in various application, where high efficiency, high resolution, gamma insensitive position sensitive neutron detectors are needed.

Mireshghi, A.; Cho, G.; Drewery, J.S.; Hong, W.S.; Jing, T.; Lee, H.; Kaplan, S.N.; Perez-Mendez, V.

1993-11-01T23:59:59.000Z

55

Design and Evaluation of Novel High Capacity Cathode Materials...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. es017johnson2010o.pdf More Documents & Publications Lithium Source For High Performance Li-ion...

56

Hybrid Nano Carbon Fiber/Graphene Platelet-Based High-Capacity...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

D.C. es009jang2010o.pdf More Documents & Publications Hybrid Nano Carbon FiberGraphene Platelet-Based High-Capacity Anodes for Lithium Ion Batteries 2010 DOE EERE Vehicle...

57

Hybrid Nano Carbon Fiber/Graphene Platelet-Based High-Capacity...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

es009jang2011o.pdf More Documents & Publications Hybrid Nano Carbon FiberGraphene Platelet-Based High-Capacity Anodes for Lithium Ion Batteries Progress of DOE...

58

Development of High Capacity Anode for Li-ion Batteries | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Anode Structures: Overview of New DOE BATT Anode Projects Hybrid Nano Carbon FiberGraphene Platelet-Based High-Capacity Anodes for Lithium Ion Batteries Hybrid Nano Carbon...

59

High-Capacity Hybrid Active Power Filter for the Power Substation  

Science Journals Connector (OSTI)

Non-linear loads, such as diode, thyristor converters and arc furnaces are typical sources of harmonic currents. A capacitor clamped voltage source inverter for high-capacity hybrid active power filter (HHAPF)...

Fen Gong; Xiangyang Xia; Shiwu Luo…

2012-01-01T23:59:59.000Z

60

High Wind Penetration Impact on U.S. Wind Manufacturing Capacity and Critical Resources  

SciTech Connect

This study used two different models to analyze a number of alternative scenarios of annual wind power capacity expansion to better understand the impacts of high levels of wind generated electricity production on wind energy manufacturing and installation rates.

Laxson, A.; Hand, M. M.; Blair, N.

2006-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

High Capacity Lossless Semi-fragile Audio Watermarking in the Time Domain  

Science Journals Connector (OSTI)

A blind high capacity lossless semi-fragile audio watermarking algorithm based on the statistical quantity related to the correlation among the audio sample values is proposed. Time domain embedding is used to...

Sunita V. Dhavale; R. S. Deodhar…

2012-01-01T23:59:59.000Z

62

Development of High-Capacity Desalination Plant Driven by Offshore Wind Turbine  

Science Journals Connector (OSTI)

This paper presents a development of the desalination plant based on the concept of the Wind Energy Marine Unit (WEMU) which is the high-capacity offshore wind turbine with the floating rotor. The great potential...

Valery V. Cheboxarov; Victor V. Cheboxarov

2009-01-01T23:59:59.000Z

63

A scalable silicon photonic chip-scale optical switch for high performance computing systems  

E-Print Network (OSTI)

A scalable silicon photonic chip-scale optical switch for high performance computing systems-scale optical switch for scalable interconnect network in high performance computing systems. The proposed

Yoo, S. J. Ben

64

Optical Stability Investigation of High-Performance Silicon-Based VUV Photodiodes  

E-Print Network (OSTI)

Optical Stability Investigation of High-Performance Silicon-Based VUV Photodiodes L. Shi, L. K Netherlands B.V. Veldhoven, the Netherlands Abstract--Silicon p+ n photodiodes fabricated by a pure boron. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able

Technische Universiteit Delft

65

New Composite Silicon-Defect Graphene Anode Architecture  

NLE Websites -- All DOE Office Websites (Extended Search)

A New Composite Silicon-Defect Graphene Anode Architecture for High Capacity, High-Rate Li-ion Batteries Xin Zhao, Cary Hayner, Mayfair Kung, and Harold Kung, Northwestern...

66

High-efficiency third-generation silicon solar cells  

Science Journals Connector (OSTI)

The results of investigating third-generation matrix silicon solar cells with an efficiency of more than 25% during conversion of concentrated solar radiation are given. Electrical and optical characteristics ......

D. S. Strebkov; V. I. Polyakov

2011-08-01T23:59:59.000Z

67

For Immediate Release AUB to develop its high performance computing capacities in the  

E-Print Network (OSTI)

For Immediate Release AUB to develop its high performance computing capacities in the service steps to become a high performance computing center that will be able to process massive amounts thousands of servers. According to Wikipedia, supercomputers, or high performance computing, play

Shihadeh, Alan

68

Research on stable, high-efficiency amorphous silicon multijunction modules  

SciTech Connect

This report describes research to improve the understanding of amorphous silicon alloys and other relevant non-semiconductor materials for use in high-efficiency, large-area multijunction modules. The research produced an average subcell initial efficiency of 8.8% over a 1-ft{sup 2} area using same-band-gap, dual-junction cells deposited over a ZnO/AlSi back reflector. An initial efficiency of 9.6% was achieved using a ZnO/Ag back reflector over smaller substrates. A sputtering machine will be built to deposit a ZnO/Ag back reflector over a 1-ft{sup 2} area so that a higher efficiency can also be obtained on larger substrates. Calculations have been performed to optimize the grid pattern, bus bars, and cell interconnects on modules. With our present state of technology, we expect a difference of about 6% between the aperture-area and active-area efficiencies of modules. Preliminary experiments show a difference of about 8%. We can now predict the performance of single-junction cells after long-term light exposure at 50{degree}C by exposing cells to short-term intense light at different temperatures. We find that single-junction cells deposited on a ZnO/Ag back reflector show the highest stabilized efficiency when the thickness of the intrinsic layers is about 2000 {angstrom}. 8 refs.

Guha, S. (United Solar Systems Corp., Troy, MI (United States))

1991-12-01T23:59:59.000Z

69

Developing a High Thermal Conductivity Fuel with Silicon Carbide Additives  

SciTech Connect

The objective of this research is to increase the thermal conductivity of uranium oxide (UO{sub 2}) without significantly impacting its neutronic properties. The concept is to incorporate another high thermal conductivity material, silicon carbide (SiC), in the form of whiskers or from nanoparticles of SiC and a SiC polymeric precursor into UO{sub 2}. This is expected to form a percolation pathway lattice for conductive heat transfer out of the fuel pellet. The thermal conductivity of SiC would control the overall fuel pellet thermal conductivity. The challenge is to show the effectiveness of a low temperature sintering process, because of a UO{sub 2}-SiC reaction at 1,377°C, a temperature far below the normal sintering temperature. Researchers will study three strategies to overcome the processing difficulties associated with pore clogging and the chemical reaction of SiC and UO{sub 2} at temperatures above 1,300°C:

Ronald baney; James Tulenko

2012-11-20T23:59:59.000Z

70

Precipitation of boron in silicon on high-dose implantation  

SciTech Connect

Precipitation of boron implanted in silicon with a dose of 1 x 10{sup 16} cm{sup -2} is studied in relation to the concentration of substitutional boron C{sub B{sub 0}} introduced before implantation and before subsequent annealing at 900 deg. C. It is shown that C{sub B{sub 0}} = 2.5 x 10{sup 20} cm{sup -3} is the critical concentration, at which the formation of precipitates is independent of the concentration of point defects introduced by implantation (far from or close to the mean projected range R{sub p}) and constitutes the prevailing channel of deactivation of boron. At lower concentrations C{sub B{sub 0}} close to the equilibrium concentration, precipitation is observed only far from R{sub p}, in the regions of reduced concentrations of point defects. At the same time, in the region of R{sub p} with a high concentration of point defects, most boron atoms are drawn into clustering with intrinsic interstitial atoms with the formation of dislocation loops and, thus, become electrically inactive as well.

Feklistov, K. V., E-mail: kos@thermo.isp.nsc.ru; Fedina, L. I.; Cherkov, A. G. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

2010-03-15T23:59:59.000Z

71

Silicon nucleation and film evolution on silicon dioxide using disilane: Rapid thermal chemical vapor deposition of very smooth silicon at high deposition rates  

SciTech Connect

An investigation of Si{sub 2}H{sub 6} and H{sub 2} for rapid thermal chemical vapor deposition (RTCVD) of silicon on SiO{sub 2} has been performed at temperatures ranging from 590 to 900 C and pressures ranging from 0.1 to 1.5 Torr. Deposition at 590 C yields amorphous silicon films with the corresponding ultrasmooth surface with a deposition rate of 68 nm/min. Cross-sectional transmission electron microscopy of a sample deposited at 625 C and 1 Torr reveals a bilayer structure which is amorphous at the growth surface and crystallized at the oxide interface. Higher temperatures yield polycrystalline films where the surface roughness depends strongly on both deposition pressure and temperature. Silane-based amorphous silicon deposition in conventional systems yields the expected ultrasmooth surfaces, but at greatly reduced deposition rates unsuitable for single-wafer processing. However, disilane, over the process window considered here, yields growth rates high enough to be appropriate for single-wafer manufacturing, thus providing a viable means for deposition of very smooth silicon films on SiO{sub 2} in a single-wafer environment.

Violette, K.E.; Oeztuerk, M.C.; Christensen, K.N.; Maher, D.M. [North Carolina State Univ., Raleigh, NC (United States)

1996-02-01T23:59:59.000Z

72

High energy bursts from a solid state laser operated in the heat capacity limited regime  

DOE Patents (OSTI)

High energy bursts are produced from a solid state laser operated in a heat capacity limited regime. Instead of cooling the laser, the active medium is thermally well isolated. As a result, the active medium will heat up until it reaches some maximum acceptable temperature. The waste heat is stored in the active medium itself. Therefore, the amount of energy the laser can put out during operation is proportional to its mass, the heat capacity of the active medium, and the temperature difference over which it is being operated. The high energy burst capacity of a heat capacity operated solid state laser, together with the absence of a heavy, power consuming steady state cooling system for the active medium, will make a variety of applications possible. Alternately, cooling takes place during a separate sequence when the laser is not operating. Industrial applications include new material working processes. 5 figs.

Albrecht, G.; George, E.V.; Krupke, W.F.; Sooy, W.; Sutton, S.B.

1996-06-11T23:59:59.000Z

73

High energy bursts from a solid state laser operated in the heat capacity limited regime  

DOE Patents (OSTI)

High energy bursts are produced from a solid state laser operated in a heat capacity limited regime. Instead of cooling the laser, the active medium is thermally well isolated. As a result, the active medium will heat up until it reaches some maximum acceptable temperature. The waste heat is stored in the active medium itself. Therefore, the amount of energy the laser can put out during operation is proportional to its mass, the heat capacity of the active medium, and the temperature difference over which it is being operated. The high energy burst capacity of a heat capacity operated solid state laser, together with the absence of a heavy, power consuming steady state cooling system for the active medium, will make a variety of applications possible. Alternately, cooling takes place during a separate sequence when the laser is not operating. Industrial applications include new material working processes.

Albrecht, Georg (Livermore, CA); George, E. Victor (Livermore, CA); Krupke, William F. (Pleasanton, CA); Sooy, Walter (Pleasanton, CA); Sutton, Steven B. (Manteca, CA)

1996-01-01T23:59:59.000Z

74

Dispersion engineering of high-Q silicon microresonators via thermal oxidation  

E-Print Network (OSTI)

We propose and demonstrate a convenient and sensitive technique for precise engineering of group-velocity dispersion in high-Q silicon microresonators. By accurately controlling the surface-oxidation thickness of silicon microdisk resonators, we are able to precisely manage the zero-dispersion wavelength while simultaneously further improving the high optical quality of our devices, with the optical Q close to a million. The demonstrated dispersion management allows us to achieve parametric generation with precisely engineerable emission wavelengths, which shows great potential for application in integrated silicon nonlinear and quantum photonics.

Jiang, Wei C; Usechak, Nicholas G; Lin, Qiang

2014-01-01T23:59:59.000Z

75

Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells  

Science Journals Connector (OSTI)

This paper presents for the first time the use of two-dimensional (2D) device simulation for optimising design parameters of high-efficiency silicon solar cells of practical dimensions. We examine the...

G. Heiser; A. G. Aberle; S. R. Wenham…

1993-01-01T23:59:59.000Z

76

Performance Measurement Technologies for High-Efficiency Crystalline Silicon Solar Cells  

Science Journals Connector (OSTI)

Accurate measurements of the I–V curves of crystalline silicon c-Si cells and modules are discussed. Special attention is paid to the recent high-efficiency devices. The effect of the sweep speed and direction...

Yoshihiro Hishikawa

2009-01-01T23:59:59.000Z

77

Etch-free Formation of Porous Silicon by High-energy Ion Irradiation...  

NLE Websites -- All DOE Office Websites (Extended Search)

these porous networks are discussed. Citation: Perez-Bergquist AG, FU Naab, Y Zhang, and LM Wang.2011."Etch-free Formation of Porous Silicon by High-energy Ion Irradiation."Nuclear...

78

Carbon-coated silicon nanowire array films for high-performance lithium-ion battery anodes  

Science Journals Connector (OSTI)

Carbon-coated silicon nanowire array films prepared by metal catalytic etching of silicon wafers and pyrolyzing of carbon aerogel were used for lithium-ion battery anodes. The films exhibited an excellent first discharge capacity of 3344 ? mAh ? g ? 1 with a Coulombic efficiency of 84% at a rate of 150 ? mA ? g ? 1 between 2 and 0.02 V and a significantly enhanced cycling performance i.e. a reversible capacity of 1326 ? mAh ? g ? 1 was retained after 40 cycles. These improvements were attributed to the uniform and continuous carbon coatings which increased electronic contact and conduction and buffered large volume changes during lithium ion insertion/extraction.

Rui Huang; Xing Fan; Wanci Shen; Jing Zhu

2009-01-01T23:59:59.000Z

79

High-Capacity Hydrogen Storage in Metal-Free Organic Molecular Crystals  

E-Print Network (OSTI)

High-Capacity Hydrogen Storage in Metal-Free Organic Molecular Crystals Mina Yoon1, 2 and Matthias donor and acceptor molecules as a promising new class of hydrogen storage materials. Using quantum(Tetrathiafulvalene)/TCNQ(7,7,8,8-tetracyanoquinodimethane) become very efficient hydrogen storage media of high gravimetric

80

NANOMATERIALS FOR HIGH CAPACITY LI-ION BATTERIES Taylor Grieve, Iowa State University, SURF 2009 Fellow  

E-Print Network (OSTI)

NANOMATERIALS FOR HIGH CAPACITY LI-ION BATTERIES Taylor Grieve, Iowa State University, SURF 2009 energy storage devices continues to grow. Lithium-ion (Li-ion) secondary, or renewable, batteries are of interest due to their high energy and power characteristics. Performance enhancements of Li- ion batteries

Li, Mo

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)  

Science Journals Connector (OSTI)

Hydrogenated microcrystalline silicon (?c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition ra...

BingQing Zhou; MeiFang Zhu; FengZhen Liu…

2008-04-01T23:59:59.000Z

82

NETL: IEP - Post-Combustion CO2 Emissions Control - Novel High Capacity  

NLE Websites -- All DOE Office Websites (Extended Search)

Novel High Capacity Oligomers for Low Cost CO2 Capture Novel High Capacity Oligomers for Low Cost CO2 Capture Project No.: DE-NT0005310 GE Global Research is using both computational and laboratory methods to identify and produce novel oligomeric solvents for the post-combustion capture of carbon dioxide (CO2). An oligomer is a polymer with relatively few structural units. Molecular and system modeling, advanced synthetic methods, and laboratory testing will be used to identify oligomeric solvents that have the potential for high CO2 capture capacity with corresponding low regeneration energy requirements. GE Global Test Equipment GE Global Test Equipment Related Papers and Publications: Aminosilicone Solvents for Low Cost CO2 Capture [PDF-2.0MB] (Sept 2010) Presentation given at the 2010 NETL CO2 Capture Technology Meeting

83

Amorphous Silicon as Semiconductor Material for High Resolution LAPS  

E-Print Network (OSTI)

-08 3.E -08 0 200 400 600 800 displacem ent/µµµµm current/A 1000 2000 3000 4000 1000 2000 3000 4000-substrate Amorphous silicon -4 -2 0 2 4 0,2 0,4 0,6 0,8 1,0 photocurrenta.u. gate voltage/V 600µm x 600µm area scan

Moritz, Werner

84

HT Combinatorial Screening of Novel Materials for High Capacity Hydrogen Storage  

NLE Websites -- All DOE Office Websites (Extended Search)

FLORIDA SOLAR ENERGY CENTER FLORIDA SOLAR ENERGY CENTER Creating Energy Independence Since 1975 A Research Institute of the University of Central Florida HT Combinatorial Screening of HT Combinatorial Screening of Novel Materials for High Capacity Novel Materials for High Capacity Hydrogen Storage Hydrogen Storage Ali T Ali T - - Raissi Raissi Director, Hydrogen & Fuel Cell R&D Director, Hydrogen & Fuel Cell R&D Division Division High Throughput/Combinatorial Analysis of Hydrogen Storage High Throughput/Combinatorial Analysis of Hydrogen Storage Materials Workshop, Bethesda, MD Materials Workshop, Bethesda, MD 26 June 2007 26 June 2007 This presentation does not contain any proprietary or confidential information 2 Objectives Objectives Develop (i.e. design, build, test and verify) a high

85

Theoretical Estimates of HVAC Duct Channel Capacity for High-Speed Internet Access  

E-Print Network (OSTI)

Theoretical Estimates of HVAC Duct Channel Capacity for High-Speed Internet Access Ariton E. Xhafa-conditioning (HVAC) ducts based on multi-carrier transmission that uses M-QAM mod- ulation and measured channel- flections in HVAC ducts). Our work also shows that data rates in excess of 300 Mbps are possible over

Stancil, Daniel D.

86

Short communication Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries  

E-Print Network (OSTI)

Short communication Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries N a Department of Materials Science and Engineering, University of Florida, 100 Rhines Hall, PO Box 116400, Gainesville, FL 32611-6400, USA b Department of Electronic Materials Engineering, Research School of Physics

Volinsky, Alex A.

87

Mathematical model and simulation of gas ow through a porous medium in high breaking capacity  

E-Print Network (OSTI)

Mathematical model and simulation of gas #29;ow through a porous medium in high breaking capacity, France. Abstract. A one-dimensional model is introduced to describe the gas #29;ow and the heat transfer model coupled with a porous medium model taking into account the mechanical interaction gas-silica sand

Sart, Remi

88

A Low Complexity High Capacity ECG Signal Watermark for Wearable Sensor-net Health Monitoring System  

E-Print Network (OSTI)

A Low Complexity High Capacity ECG Signal Watermark for Wearable Sensor-net Health Monitoring, RMIT University, Melbourne, Australia Abstract In Wireless telecardiology applications, an ECG signal signal collision attacks). ECG data transmission can be more robustly tied to either patient identity

van Schyndel, Ron

89

Development of manufacturing capability for high-concentration, high-efficiency silicon solar cells  

SciTech Connect

This report presents a summary of the major results from a program to develop a manufacturable, high-efficiency silicon concentrator solar cell and a cost-effective manufacturing facility. The program was jointly funded by the Electric Power Research Institute, Sandia National Laboratories through the Concentrator Initiative, and SunPower Corporation. The key achievements of the program include the demonstration of 26%-efficient silicon concentrator solar cells with design-point (20 W/cm{sup 2}) efficiencies over 25%. High-performance front-surface passivations; that were developed to achieve this result were verified to be absolutely stable against degradation by 475 days of field exposure at twice the design concentration. SunPower demonstrated pilot production of more than 1500 of these cells. This cell technology was also applied to pilot production to supply 7000 17.7-cm{sup 2} one-sun cells (3500 yielded wafers) that demonstrated exceptional quality control. The average efficiency of 21.3% for these cells approaches the peak efficiency ever demonstrated for a single small laboratory cell within 2% (absolute). Extensive cost models were developed through this program and calibrated by the pilot-production project. The production levels achieved indicate that SunPower could produce 7-10 MW of concentrator cells per year in the current facility based upon the cell performance demonstrated during the program.

Sinton, R.A.; Verlinden, P.J.; Crane, R.A.; Swanson, R.N. [SunPower Corp., Sunnyvale, CA (United States)

1996-10-01T23:59:59.000Z

90

Graphene-Wrapped Sulfur Particles as a Rechargeable Lithium–Sulfur Battery Cathode Material with High Capacity and Cycling Stability  

Science Journals Connector (OSTI)

Graphene-Wrapped Sulfur Particles as a Rechargeable Lithium–Sulfur Battery Cathode Material with High Capacity and Cycling Stability ... The resulting graphene–sulfur composite showed high and stable specific capacities up to ?600 mAh/g over more than 100 cycles, representing a promising cathode material for rechargeable lithium batteries with high energy density. ...

Hailiang Wang; Yuan Yang; Yongye Liang; Joshua Tucker Robinson; Yanguang Li; Ariel Jackson; Yi Cui; Hongjie Dai

2011-06-24T23:59:59.000Z

91

Short Channel Amorphous-Silicon TFT's on High-Temperature Clear Plastic Substrates  

E-Print Network (OSTI)

Short Channel Amorphous-Silicon TFT's on High-Temperature Clear Plastic Substrates K. Long, H@princeton.edu To achieve light-weight flexible AMOLED displays on plastic substrates, the substratesmust be optically clear for plastic. High-temperature plastics such as polyimide (e.g. KaptonB E) have a glass transition temperature

92

HIGH QUALITY GERMANIUM PHOTODIODES ON SILICON SUBSTRATES USING AN INTERMEDIATE CHEMICAL MECHANICAL POLISHING STEP  

E-Print Network (OSTI)

HIGH QUALITY GERMANIUM PHOTODIODES ON SILICON SUBSTRATES USING AN INTERMEDIATE CHEMICAL MECHANICAL, MA 02139. ABSTRACT Germanium (Ge) photodiodes are capable of high quantum yields and can operate quality Ge/Si can be used to integrate GaAs/Ge solar cells, light emitting devices, and Ge photodiodes

93

High-capacity trays debottleneck Texas C{sub 3} splitter  

SciTech Connect

In 1992, Chevron Chemical Company placed 325 of UOP`s Enhanced Capacity Multiple Downcomer (ECMD) trays in its large C{sub 3} splitter at Port Arthur, Tex. The capacity of the splitter was increased by 40% /to about 124,000 lb/hr. Many times, engineers are faced with debottlenecking their fractionation trains. High-pressure and heavily liquid-loaded service is of particular interest because of the high capital cost to replace a vessel. This recently patented high-capacity tray enabled Chevron to revamp its fractionation tower, thus avoiding costly tower replacement. At Chevron`s Port Arthur, Tex., plant, the propylene/propane stream first flows through a multiple-bed treatment system to ensure high-purity product. The steam then proceeds to a large propylene/propane fractionation unit that produces hundreds of millions of pounds per year of polymer-grade propylene while utilizing mostly waste heat to keep operating costs low. The paper describes the ECMD trays, their development, commercialization, an design, the Chevron revamp start-up, and operation.

Summers, D.R. [Stone and Webster Engineering Corp., Houston, TX (United States); McGuire, P.J.; Resetarits, M.R. [UOP, Tonawanda, NY (United States); Graves, C.E. [Chevron Chemical Co., Baytown, TX (United States); Harper, S.E. [Chevron Chemical Co., Kingwood, TX (United States); Angelino, S.J. [Angelino (Salvatore J.), Tonawanda, NY (United States)

1995-11-06T23:59:59.000Z

94

Vehicle Technologies Office Merit Review 2014: Development of Silicon-based High Capacity Anodes  

Energy.gov (U.S. Department of Energy (DOE))

Presentation given by Pacific Northwest National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about the...

95

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells  

SciTech Connect

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01T23:59:59.000Z

96

NETL: A Low-Cost, High-Capacity Regenerable Sorbent for CO2 Capture From  

NLE Websites -- All DOE Office Websites (Extended Search)

A Low Cost, High Capacity Regenerable Sorbent for CO2 Capture from Existing Coal-Fired Power Plants A Low Cost, High Capacity Regenerable Sorbent for CO2 Capture from Existing Coal-Fired Power Plants Project No.: DE-FE0007580 TDA Research, Inc is developing a low cost, high capacity CO2 adsorbent and demonstrating its technical and economic viability for post-combustion CO2 capture for existing pulverized coal-fired power plants. TDA is using an advanced physical adsorbent to selectively remove CO2 from flue gas. The sorbent exhibits a much higher affinity to adsorb CO2 than N2, H2O or O2, enabling effective CO2 separation from the flue gas. The sorbent binds CO2 more strongly than common adsorbents, providing the chemical potential needed to remove the CO2, however, because CO2 does not form a true covalent bond with the surface sites, regeneration can be carried out with only a small energy input. The heat input to regenerate the sorbent is only 4.9 kcal per mol of CO2, which is much lower than that for chemical absorbents or amine based solvents.

97

Research on stable, high-efficiency amorphous silicon multijunction modules  

SciTech Connect

This report describes research on semiconductor and non-semiconductor materials to enhance the performance of multi-band-gap, multijunction panel with an area greater than 900 cm[sup 2] by 1992. Double-junction and triple-junction cells are mode on a Ag/ZnO back reflector deposited on stainless steel substrates. An a-SiGe alloy is used for the i-layer in the bottom and the middle cells; the top cell uses an amorphous silicon alloy. After the evaporation of an antireflection coating, silver grids and bus bars are put on the top surface and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a 1-ft[sup 2] monolithic module.

Guha, S. (United Solar Systems Corp., Troy, MI (United States))

1992-09-01T23:59:59.000Z

98

High surface area silicon carbide-coated carbon aerogel  

SciTech Connect

A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

2014-01-14T23:59:59.000Z

99

Influence Of Ultrasonic Waves On The Formation Of High Pores Silicon Carbide  

SciTech Connect

The Challenge to produce a quality Silicon Carbide that combination high surface area is promising and this material can be used in many application such as Hydrogen storage materials. Synthesis of high surface area carbon materials by selective etching of Silicon Carbide with choric acid while exposing ultrasonic wave have been made.Powder Of Sic (surface area 17.8 m{sup 2}/g) was treated in the chloric acetic as well as their mixture of various compositions and various time exposure of ultrasonic waves. Surface area and pore size can be controlled by temperature and concentration composition of Chloric and time exposure of ultrasonic wave.The resultant carbon and carbon-silicon carbide composite powders were characterized X-ray diffraction and Electron microscope. To determine a conversion degree of silicon carbide due to influence of the ultrasonic wave, the samples were annealed in open air at 1000 deg. C. There by carbon component of the carbon/silicon carbide composite was completely oxidized. The analysis of the samples shows the strong influence of time exposure of ultrasonic waves on the formation of pores.

Toana, Musfirah C. F. [Physics Dept. University of Tadulako (Indonesia); Soegijono, B.; Hikam, M. [Physics Dept. University of Indonesia (Indonesia)

2009-09-14T23:59:59.000Z

100

PEDOT: Cathode active material with high specific capacity in novel electrolyte system  

Science Journals Connector (OSTI)

Poly(3,4-ethylenedioxythiophene) (PEDOT) was chemically synthesized and characterized by FT-IR, XRD, XPS, TGA and organic elemental analysis (EA). The polymer was tested as cathode active material for rechargeable lithium batteries. The cyclic voltammetry (CV) and charge–discharge tests of PEDOT as the cathode active material was investigated in an electrolyte system of LiN(CF3SO2)2/1,2-dimethoxyethane/1,3-dioxopentane (1:2 by weight). The peak discharge capacity of up to 691 mAh/g was obtained during the 1st cycle, and remained above 330 mAh/g after 44 cycles. These results indicate that PEDOT can afford a high specific capacity as a cathode active material. A redox mechanism is tentatively proposed.

Lizhi Zhan; Zhiping Song; Jingyu Zhang; Jing Tang; Hui Zhan; Yunhong Zhou; Caimao Zhan

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices  

E-Print Network (OSTI)

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices for thermoelectric devices are presented. Inter- ference lithography was used to pattern square lattice photoresist. The Si NW arrays were embedded in SOG to form a dense and robust composite material for device

Bowers, John

102

Ultra-high hydrogen storage capacity of Li-decorated graphyne: A first-principles prediction  

SciTech Connect

Graphyne, consisting of sp- and sp{sup 2}-hybridized carbon atoms, is a new member of carbon allotropes which has a natural porous structure. Here, we report our first-principles calculations on the possibility of Li-decorated graphyne as a hydrogen storage medium. We predict that Li-doping significantly enhances the hydrogen storage ability of graphyne compared to that of pristine graphyne, which can be attributed to the polarization of H{sub 2} molecules induced by the charge transfer from Li atoms to graphyne. The favorite H{sub 2} molecules adsorption configurations on a single side and on both sides of a Li-decorated graphyne layer are determined. When Li atoms are adsorbed on one side of graphyne, each Li can bind four H{sub 2} molecules, corresponding to a hydrogen storage capacity of 9.26 wt. %. The hydrogen storage capacity can be further improved to 15.15 wt. % as graphyne is decorated by Li atoms on both sides, with an optimal average binding energy of 0.226 eV/H{sub 2}. The results show that the Li-decorated graphyne can serve as a high capacity hydrogen storage medium.

Zhang Hongyu; Zhang Meng; Zhao Lixia; Luo Youhua [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Zhao Mingwen; Bu Hongxia; He Xiujie [School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 Shandong (China)

2012-10-15T23:59:59.000Z

103

Development and Testing of a High Capacity Plasma Chemical Reactor in the Ukraine  

SciTech Connect

This project, Development and Testing of a High Capacity Plasma Chemical Reactor in the Ukraine was established at the Kharkiv Institute of Physics and Technology (KIPT). The associated CRADA was established with Campbell Applied Physics (CAP) located in El Dorado Hills, California. This project extends an earlier project involving both CAP and KIPT conducted under a separate CRADA. The initial project developed the basic Plasma Chemical Reactor (PCR) for generation of ozone gas. This project built upon the technology developed in the first project, greatly enhancing the output of the PCR while also improving reliability and system control.

Reilly, Raymond W.

2012-07-30T23:59:59.000Z

104

Hierarchical 3D mesoporous silicon@graphene nanoarchitectures for lithium ion batteries with superior performance  

Science Journals Connector (OSTI)

Silicon has been recognized as the most promising anode material for high capacity lithium ion batteries. However, large volume variations during charge ... can be overcome by combination with well-organized graphene

Shuangqiang Chen; Peite Bao; Xiaodan Huang; Bing Sun; Guoxiu Wang

2014-01-01T23:59:59.000Z

105

Process characterization of Electrical Discharge Machining of highly doped silicon  

E-Print Network (OSTI)

Electrical Discharge Machining (EDM) is an advanced machining process that removes material via thermal erosion through a plasma arc. The machining process is accomplished through the application of high frequency current ...

Crawford, Gregory Allan

2012-01-01T23:59:59.000Z

106

Rapid Thermal Processing of High Efficiency n-Type Silicon Solar Cells with Al Back Junction  

SciTech Connect

In this paper we report on the design, fabrication and modeling of 49 cm{sup 2}, 200-{micro}m thick, 1-5 {Omega}-cm, n- and p-type <111> and <100> screen-printed silicon solar cells. A simple process involving RTP front surface phosphorus diffusion, low frequency PECVD silicon nitride deposition, screen-printing of Al metal and Ag front grid followed by co-firing of front and back contacts produced cell efficiencies of 15.4% on n-type <111> Si, 15.1% on n-type <100> Si, 15.8% on p-type <111> Si and 16.1% on p-type <100> Si. Open circuit voltage was comparable for n and p type cells and was also independent of wafer orientation. High fill factor values (0.771-0.783) for all the devices ruled out appreciable shunting which has been a problem for the development of co-fired n-type <100> silicon solar cells with Al back junction. Model calculations were performed using PC1D to support the experimental results and provide guidelines for achieving >17% n-type silicon solar cells by rapid firing of Al back junction.

Ebong, A.; Upadhyaya, V.; Rounsaville, B.; Kim, D. S.; Meemongkolkiat, V.; Rohatgi, A.; Al-Jassim, M. M.; Jones, K. M.; To, B.

2006-01-01T23:59:59.000Z

107

Advanced polycrystalline silicon thin film solar cells using high rate plasma enhanced chemical vapour deposited amorphous silicon on textured glass.  

E-Print Network (OSTI)

??Solid phase crystallized polycrystalline silicon (poly-Si) thin-film solar cell on glass is an emerging Photovoltaics (PV) technology combining the robustness of crystalline Si material with… (more)

Jin, Guangyao

2010-01-01T23:59:59.000Z

108

Novel textured glass substrate with high light trapping capacity for thin film Si solar cells application  

Science Journals Connector (OSTI)

A novel large feature size crater like glass substrate was proposed in this paper. P-i-n type microcrystalline silicon film solar cell with higher external quantum efficiency was...

Wang, Yanfeng; Zhang, xiaodan; Bai, Lisha; Huang, Qian; Wei, Changchun; Zhao, Ying

109

Plasma polymerization of C[subscript 4]F[subscript 8] thin film on high aspect ratio silicon molds  

E-Print Network (OSTI)

High aspect ratio polymeric micro-patterns are ubiquitous in many fields ranging from sensors, actuators, optics, fluidics and medical. Second generation PDMS molds are replicated against first generation silicon molds ...

Yeo, L. P.

110

Preparation of surface modified zinc oxide nanoparticle with high capacity dye removal ability  

SciTech Connect

Highlights: ? Amine-functionalized zinc oxide nanoparticle (AFZON) was synthesized. ? Isotherm and kinetics data followed Langmuir isotherm and pseudo-second order kinetic model, respectively. ? Q{sub 0} of ZON for AB25, DR23 and DR31 was 20, 12 and 15 mg/g, respectively. ? Q{sub 0} of AFZON for AB25, DR23 and DR31 was 1250, 1000 and 1429 mg/g, respectively. ? AFZON was regenerated at pH 12. -- Abstract: In this paper, the surface modification of zinc oxide nanoparticle (ZON) by amine functionalization was studied to prepare high capacity adsorbent. Dye removal ability of amine-functionalized zinc oxide nanoparticle (AFZON) and zinc oxide nanoparticle (ZON) was also investigated. The physical characteristics of AFZON were studied using Fourier transform infrared (FTIR), scanning electron microscopy (SEM) and X-ray diffraction (XRD). Acid Blue 25 (AB25), Direct Red 23 (DR23) and Direct Red 31 (DR31) were used as model compounds. The effect of operational parameters such as dye concentration, adsorbent dosage, pH and salt on dye removal was evaluated. The isotherm and kinetic of dye adsorption were studied. The maximum dye adsorption capacity (Q{sub 0}) was 20 mg/g AB25, 12 mg/g DR23 and 15 mg/g DR31 for ZON and 1250 mg/g AB25, 1000 mg/g DR23 and 1429 mg/g DR31 for AFZON. It was found that dye adsorption followed Langmuir isotherm. Adsorption kinetic of dyes was found to conform to pseudo-second order kinetics. Dye desorption tests (adsorbent regeneration) showed that the maximum dye release of 90% AB25, 86% for DR23 and 90% for DR31 were achieved in aqueous solution at pH 12. Based on the data of the present investigation, it can be concluded that the AFZON being an adsorbent with high dye adsorption capacity might be a suitable alternative to remove dyes from colored aqueous solutions.

Mahmoodi, Niyaz Mohammad, E-mail: nm_mahmoodi@yahoo.com [Department of Environmental Research, Institute for Color Science and Technology, Tehran (Iran, Islamic Republic of); Najafi, Farhood [Department of Resin and Additives, Institute for Color Science and Technology, Tehran (Iran, Islamic Republic of)] [Department of Resin and Additives, Institute for Color Science and Technology, Tehran (Iran, Islamic Republic of)

2012-07-15T23:59:59.000Z

111

Laboratory Development of A High Capacity Gas-Fired paper Dryer  

SciTech Connect

Paper drying is the most energy-intensive and temperature-critical aspect of papermaking. It is estimated that about 67% of the total energy required in papermaking is used to dry paper. The conventional drying method uses a series of steam-heated metal cylinders that are required to meet ASME codes for pressure vessels, which limits the steam pressure to about 160 psig. Consequently, the shell temperature and the drying capacity are also limited. Gas Technology Institute together with Boise Paper Solutions, Groupe Laparrier and Verreault (GL&V) USA Inc., Flynn Burner Corporation and with funding support from the U.S. Department of Energy, U.S. natural gas industry, and Gas Research Institute is developing a high efficiency gas-fired paper dryer based on a combination of a ribbon burner and advanced heat transfer enhancement technique. The Gas-Fired Paper Dryer (GFPD) is a high-efficiency alternative to conventional steam-heated drying drums that typically operate at surface temperatures in the 300���������������ºF range. The new approach was evaluated in laboratory and pilot-scale testing at the Western Michigan University Paper Pilot Plant. Drum surface temperatures of more than 400���������������ºF were reached with linerboard (basis weight 126 lb/3000 ft2) production and resulted in a 4-5 times increase in drying rate over a conventional steam-heated drying drum. Successful GFPD development and commercialization will provide large energy savings to the paper industry and increase paper production rates from dryer-limited (space- or steam-limited) paper machines by an estimated 10 to 20%, resulting in significant capital costs savings for both retrofits and new capacity.

Yaroslav Chudnovsky; Aleksandr Kozlov; Lester Sherrow

2005-09-30T23:59:59.000Z

112

Final Report: Laboratory Development of a High Capacity Gas-Fired Paper Dryer  

SciTech Connect

Paper drying is the most energy-intensive and temperature-critical aspect of papermaking. It is estimated that about 67% of the total energy required in papermaking is used to dry paper. The conventional drying method uses a series of steam-heated metal cylinders that are required to meet ASME codes for pressure vessels, which limits the steam pressure to about 160 psig. Consequently, the shell temperature and the drying capacity are also limited. Gas Technology Institute together with Boise Paper Solutions, Groupe Laperrier and Verreault (GL&V) USA Inc., Flynn Burner Corporation and with funding support from the U.S. Department of Energy, U.S. natural gas industry, and Gas Research Institute is developing a high efficiency gas-fired paper dryer based on a combination of a ribbon burner and advanced heat transfer enhancement technique. The Gas-Fired Paper Dryer (GFPD) is a high-efficiency alternative to conventional steam-heated drying drums that typically operate at surface temperatures in the 300 deg F range. The new approach was evaluated in laboratory and pilot-scale testing at the Western Michigan University Paper Pilot Plant. Drum surface temperatures of more than 400 deg F were reached with linerboard (basis weight 126 lb/3000 ft2) production and resulted in a 4-5 times increase in drying rate over a conventional steam-heated drying drum. Successful GFPD development and commercialization will provide large energy savings to the paper industry and increase paper production rates from dryer-limited (space- or steam-limited) paper machines by an estimated 10 to 20%, resulting in significant capital costs savings for both retrofits and new capacity.

Yaroslav Chudnovsky; Aleksandr Kozlov; Lester Sherrow

2005-09-30T23:59:59.000Z

113

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors  

SciTech Connect

Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

2010-01-01T23:59:59.000Z

114

High-resolution mapping of quantum efficiency of silicon photodiode via optical-feedback laser microthermography  

SciTech Connect

We map the external quantum efficiency (QE) distribution of a silicon photodiode (PD) sample via a thermographic imaging technique based on optical-feedback laser confocal microscopy. An image pair consisting of the confocal reflectance image and the 2D photocurrent map is simultaneously acquired to delineate the following regions of interest on the sample: the substrate, the n-type region, the pn overlay, and the bonding pad. The 2D QE distribution is derived from the photocurrent map to quantify the optical performance of these sites. The thermal integrity of the sample is then evaluated by deriving the rate of change of QE with temperature T at each point on the silicon PD. These gradient maps function not only as stringent measures of local thermal QE activity but they also expose probable defect locations on the sample at high spatial resolution - a capability that is not feasible with existing bulk measurement techniques.

Cemine, Vernon Julius; Blanca, Carlo Mar; Saloma, Caesar

2006-09-20T23:59:59.000Z

115

High-rate deposition of hydrogenated amorphous silicon films and devices  

SciTech Connect

This report summarizes the status of high-rate deposition technologies associated with amorphous silicon thin films for photovoltaic applications. The report lists (1) deposition rates for a-Si:H films according to source and method and (2) efficiencies and other parameters of a-Si:H solar cells. Two main deposition source materials, silane and disilane, are discussed, as well as effects of boron doping. The effects of various deposition parameters on film characteristics and on deposition rate are presented, as well as the effects of annealing on high-deposition-rate films. Light-induced effects are also discussed. Finally, progress and problems in this field of study are summarized.

Luft, W.

1987-04-01T23:59:59.000Z

116

Mass production of high efficiency selective emitter crystalline silicon solar cells employing phosphorus ink technology  

Science Journals Connector (OSTI)

Abstract Phosphorus ink technology has been demonstrated as a simple and cheap method to realize selective emitter (SE) crystalline silicon solar cells through mass production in a professional photovoltaic company. We have achieved an average conversion efficiency (?) of 19.01% with peak ? of 19.27% for the SE solar cells based on commercial-grade p-type silicon substrate, much higher than that of the homogeneous emitter counterparts whose average ? is 18.56%. The standard deviation of the performance for these SE solar cells is also smaller, indicating better repeatability of the phosphorus ink SE technology. Moreover, the SE silicon solar cells can well adapt to various Ag pastes while preserving high cell performance, which offers an opportunity to choose a cheap Ag paste as front metallization material. With the aid of PC1D, we have shown that the ? of the SE solar cells can be further improved as the sheet resistance in the illuminated area increases from the present value of 70 to 120 ?/?.

Sihua Zhong; Wenzhong Shen; Feng Liu; Xiang Li

2013-01-01T23:59:59.000Z

117

Defect Engineering, Cell Processing, and Modeling for High-Performance, Low-Cost Crystalline Silicon Photovoltaics  

SciTech Connect

The objective of this project is to close the efficiency gap between industrial multicrystalline silicon (mc-Si) and monocrystalline silicon solar cells, while preserving the economic advantage of low-cost, high-volume substrates inherent to mc-Si. Over the course of this project, we made significant progress toward this goal, as evidenced by the evolution in solar-cell efficiencies. While most of the benefits of university projects are diffuse in nature, several unique contributions can be traced to this project, including the development of novel characterization methods, defect-simulation tools, and novel solar-cell processing approaches mitigate the effects of iron impurities ("Impurities to Efficiency" simulator) and dislocations. In collaboration with our industrial partners, this project contributed to the development of cell processing recipes, specialty materials, and equipment that increased cell efficiencies overall (not just multicrystalline silicon). Additionally, several students and postdocs who were either partially or fully engaged in this project (as evidenced by the publication record) are currently in the PV industry, with others to follow.

Buonassisi, Tonio

2013-02-26T23:59:59.000Z

118

Thin silicon solar cells  

SciTech Connect

The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [Astro Power Inc., Solar Park, Newark, DE (United States)

1992-12-01T23:59:59.000Z

119

Binder-free Ge-three dimensional graphene electrodes for high-rate capacity Li-ion batteries  

SciTech Connect

A binder-free, high-rate Ge-three dimensional (3D) graphene composite was synthesized by directly depositing Ge film atop 3D graphene grown by microwave plasma chemical vapor deposition on Ni substrate. The Ge-3D graphene structure demonstrates excellent electrochemical performance as a lithium ion battery (LIB) anode with a reversible capacity of 1140 mAh g{sup ?1} at 1/3C over 100 cycles and 835 mAh g{sup ?1} at 8C after 60 cycles, and significantly a discharge capacity of 186 mAh g{sup ?1} was still achieved at 32C. The high capacity and outstanding stability of the Ge-3D graphene composite propose it as a promising electrode in high-performance thin film LIBs.

Wang, C. D.; Chui, Y. S.; Chen, X. F., E-mail: xianfeng.chen@cityu.edu.hk, E-mail: apwjzh@cityu.edu.hk; Zhang, W. J., E-mail: xianfeng.chen@cityu.edu.hk, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Li, Y. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China) [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Department of Polymer Science and Engineering, Soochow University, Suzhou 215123 (China)

2013-12-16T23:59:59.000Z

120

Binder-free Ge-three dimensional graphene electrodes for high-rate capacity Li-ion batteries  

Science Journals Connector (OSTI)

A binder-free high-rate Ge-three dimensional (3D) graphene composite was synthesized by directly depositing Ge film atop 3D graphene grown by microwave plasma chemical vapor deposition on Ni substrate. The Ge-3D graphene structure demonstrates excellent electrochemical performance as a lithium ion battery (LIB) anode with a reversible capacity of 1140 mAh g?1 at 1/3C over 100 cycles and 835 mAh g?1 at 8C after 60 cycles and significantly a discharge capacity of 186 mAh g?1 was still achieved at 32C. The high capacity and outstanding stability of the Ge-3D graphene composite propose it as a promising electrode in high-performance thin film LIBs.

C. D. Wang; Y. S. Chui; Y. Li; X. F. Chen; W. J. Zhang

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator  

E-Print Network (OSTI)

Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.

Ding, Yunhong; Xiao, Sanshui; Hu, Hao; Frandsen, Lars Hagedorn; Mortensen, N Asger; Yvind, Kresten

2015-01-01T23:59:59.000Z

122

A Low Cost, High Capacity Regenerable Sorbent for Pre-combustion CO{sub 2} Capture  

SciTech Connect

The overall objective of the proposed research is to develop a low cost, high capacity CO{sub 2} sorbent and demonstrate its technical and economic viability for pre-combustion CO{sub 2} capture. The specific objectives supporting our research plan were to optimize the chemical structure and physical properties of the sorbent, scale-up its production using high throughput manufacturing equipment and bulk raw materials and then evaluate its performance, first in bench-scale experiments and then in slipstream tests using actual coal-derived synthesis gas. One of the objectives of the laboratory-scale evaluations was to demonstrate the life and durability of the sorbent for over 10,000 cycles and to assess the impact of contaminants (such as sulfur) on its performance. In the field tests, our objective was to demonstrate the operation of the sorbent using actual coal-derived synthesis gas streams generated by air-blown and oxygen-blown commercial and pilot-scale coal gasifiers (the CO{sub 2} partial pressure in these gas streams is significantly different, which directly impacts the operating conditions hence the performance of the sorbent). To support the field demonstration work, TDA collaborated with Phillips 66 and Southern Company to carry out two separate field tests using actual coal-derived synthesis gas at the Wabash River IGCC Power Plant in Terre Haute, IN and the National Carbon Capture Center (NCCC) in Wilsonville, AL. In collaboration with the University of California, Irvine (UCI), a detailed engineering and economic analysis for the new CO{sub 2} capture system was also proposed to be carried out using Aspen PlusTM simulation software, and estimate its effect on the plant efficiency.

Alptekin, Gokhan

2012-09-30T23:59:59.000Z

123

Correlation between radiation processes in silicon and long-time degradation of detectors for high energy physics experiments  

E-Print Network (OSTI)

In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame of a phenomenological model which includes: generation of primary defects at irradiation starting from elementary interactions in silicon; kinetics of defects, effects at the p-n junction detector level. The effects due to irradiating particles (pions, protons, neutrons), to their flux, to the anisotropy of the threshold energy in silicon, to the impurity concentrations and resistivity of the starting material are investigated as time, fluence and temperature dependences of detector characteristics. The expected degradation of the electrical parameters of detectors in the complex hadron background fields at LHC & SLHC are predicted.

Lazanu, S; Lazanu, Sorina; Lazanu, Ionel

2007-01-01T23:59:59.000Z

124

Correlation between radiation processes in silicon and long-time degradation of detectors for high energy physics experiments  

E-Print Network (OSTI)

In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame of a phenomenological model which includes: generation of primary defects at irradiation starting from elementary interactions in silicon; kinetics of defects, effects at the p-n junction detector level. The effects due to irradiating particles (pions, protons, neutrons), to their flux, to the anisotropy of the threshold energy in silicon, to the impurity concentrations and resistivity of the starting material are investigated as time, fluence and temperature dependences of detector characteristics. The expected degradation of the electrical parameters of detectors in the complex hadron background fields at LHC & SLHC are predicted.

Sorina Lazanu; Ionel Lazanu

2006-11-20T23:59:59.000Z

125

High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane  

SciTech Connect

The deposition rate, electronic and optical properties of hydrogenated amorphous silicon films prepared from rf glow discharge decomposition of disilane (Si/sub 2/H/sub 6/) diluted in helium have been measured. These films show excellent electrical and optical properties and, most importantly, a high deposition rate coupled with satisfactory solar cell application was realized for the first time. At a deposition rate of 11 A/s, 5.47% and 6.5% conversion efficiencies were obtained with a first trial of n-i-p type solar cells deposited on SnO/sub 2//ITO glass and metal substrates, respectively.

Ohashi, Y.; Kenne, J.; Konagai, M.; Takahashi, K.

1983-06-15T23:59:59.000Z

126

Achieving increased spent fuel storage capacity at the High Flux Isotope Reactor (HFIR)  

SciTech Connect

The HFIR facility was originally designed to store approximately 25 spent cores, sufficient to allow for operational contingencies and for cooling prior to off-site shipment for reprocessing. The original capacity has now been increased to 60 positions, of which 53 are currently filled (September 1994). Additional spent cores are produced at a rate of about 10 or 11 per year. Continued HFIR operation, therefore, depends on a significant near-term expansion of the pool storage capacity, as well as on a future capability of reprocessing or other storage alternatives once the practical capacity of the pool is reached. To store the much larger inventory of spent fuel that may remain on-site under various future scenarios, the pool capacity is being increased in a phased manner through installation of a new multi-tier spent fuel rack design for higher density storage. A total of 143 positions was used for this paper as the maximum practical pool capacity without impacting operations; however, greater ultimate capacities were addressed in the supporting analyses and approval documents. This paper addresses issues related to the pool storage expansion including (1) seismic effects on the three-tier storage arrays, (2) thermal performance of the new arrays, (3) spent fuel cladding corrosion concerns related to the longer period of pool storage, and (4) impacts of increased spent fuel inventory on the pool water quality, water treatment systems, and LLLW volume.

Cook, D.H.; Chang, S.J.; Dabs, R.D.; Freels, J.D.; Morgan, K.A.; Rothrock, R.B. [Oak Ridge National Lab., TN (United States); Griess, J.C. [Griess (J.C.), Knoxville, TN (United States)

1994-12-31T23:59:59.000Z

127

Mn3O4-Graphene Hybrid as a High-Capacity Anode Material for Lithium Ion Hailiang Wang,,  

E-Print Network (OSTI)

Mn3O4-Graphene Hybrid as a High-Capacity Anode Material for Lithium Ion Batteries Hailiang Wang hybrid materials of Mn3O4 nanoparticles on reduced graphene oxide (RGO) sheets for lithium ion battery-cost, and environ- mentally friendly anode for lithium ion batteries. Our growth-on- graphene approach should offer

Cui, Yi

128

A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading  

SciTech Connect

A study has been made of high-cycle fatigue in 2um thick structural films of n+- type, polycrystalline silicon for MEMS applications.

Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

2001-11-01T23:59:59.000Z

129

Remarkable progress in thin-film silicon solar cells using high-efficiency triple-junction technology  

Science Journals Connector (OSTI)

Abstract Despite the many advantages of thin-film silicon (Si) solar cells, their low efficiencies remain a challenge that must be overcome. Efficient light utilization across the solar spectrum is required to achieve efficiencies over 15%, allowing them to be competitive with other solar cell technologies. To produce high-efficiency thin-film Si solar cells, we have developed triple-junction solar cell structures to enhance solar spectrum utilization. To maximize the light management, in-house ZnO:Al layers with high haze ratios and high transmittances were developed. In addition, novel doping layers, such as n-type microcrystalline silicon oxide (µc-SiOx:H), which has a very low refractive index, and p-type microcrystalline silicon oxide (µc-SiOx:H), which has a wide bandgap, were successfully applied to the optical reflector and the window layer, respectively. Thin-film quality control techniques for the deposition of hydrogenated amorphous silicon (a-Si:H) in the top cell, hydrogenated amorphous silicon-germanium (a-SiGe:H) or hydrogenated microcrystalline silicon (?c-Si:H) in the middle cell, and hydrogenated microcrystalline silicon (?c-Si:H) in the bottom cell were also important factors leading to the production of high-efficiency triple-junction solar cells. As a result of this work, an initial efficiency of 16.1% (in-house measurement) in the a-Si:H/a-SiGe:H/?c-Si:H stack and a stabilized efficiency of 13.4% (confirmed by NREL) in the a-Si:H/?c-Si:H/?c-Si:H stack were successfully achieved in a small-area triple-junction solar cell with dimensions of 1 cm×1 cm.

Soohyun Kim; Jin-Won Chung; Hyun Lee; Jinhee Park; Younho Heo; Heon-Min Lee

2013-01-01T23:59:59.000Z

130

Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule  

SciTech Connect

The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

Emanuel Sachs

2013-01-16T23:59:59.000Z

131

PIN detector arrays and integrated readout circuitry on high-resistivity float-zone silicon  

SciTech Connect

A new silicon PIN-diode-based pixel detector for ionizing particles integrating a two-dimensional array of detecting elements with readout circuitry has been developed and extensively tested. The signal charge is collected on a low-capacitance electrode avoiding loss of charge into the local readout circuitry within each pixel. The spatial resolution for a given circuitry size is optimized. The approach required back side patterning of the wafer, the only nonconventional part in the Stanford BiCMOS based manufacturing process. Thirteen masks on the front side of the wafer and three on the back yielded both CMOS readout circuitry and detecting elements. A gettering step helped obtain a high minority carrier lifetime (500 [mu]s). Test results obtained by infrared illumination, gamma rays, and high-energy particles, which have been described in detail elsewhere, will be summarized. They include a signal to single-channel-noise performance of about 150 to 1 for a minimum ionizing particle, which is an order of magnitude better than silicon strip detectors currently used, and a record-breaking spatial resolution in the direction of smallest pixel pitch (standard deviation of about 1.8 [mu]m). The authors describe the device and chip operation of the new detector in detail.

Snoeys, W.; Plummer, J. (Stanford Univ., CA (United States). Center for Integrated Systems); Parker, S.; Kenney, C. (Univ. of Hawaii, Honolulu, HI (United States). Dept. of Physics)

1994-06-01T23:59:59.000Z

132

Hierarchical functional layers on high-capacity lithium-excess cathodes for superior lithium ion batteries  

Science Journals Connector (OSTI)

Abstract Li-excess layered Li[Li0.2Mn0.54Ni0.13Co0.13]O2 (LMNCO) nanoparticles are facilely synthesized using a surfactant-assisted dispersion method. Ultrathin and conformal oxide coatings are deposited on the surface of individual LMNCO nanoparticle via atomic layer deposition (ALD). The effect of oxide ALD coatings on improving electrochemical performance of LMNCO electrodes is evaluated and optimized via tuning the coating thickness and composition. In addition, we synthesize a novel core–shell structure cathode consisting of Li-excess LMNCO as core and Li-stoichiometric material as shell, and its electrochemical property is optimized by tailoring weight content and composition of shell materials. Finally, electrochemical performance of Li-excess cathode material can be maximized by surface modification with hierarch functional layers composed of 10 wt.% LiCoO2 shell (?10 nm thick) and 6ZrO2 ALD layers (?1 nm thick), which delivers very high initial discharge capacities of 296.4, 259.8, 156.6 and 104.2 mAh g?1 at 0.1C, 1C, 5C and 10C, and can retain 184.0 mAh g?1 at 1C after 100 electrochemical cycles. Such remarkably improved cycleabilitiy and rate capability of nanoarchitected Li-excess layered cathode material can be attributed to the synergic effect from hierarchical functional coatings to reduce electrochemical polarization, structural degradation and side reactions during electrochemical cycling.

Jianqing Zhao; Saad Aziz; Ying Wang

2014-01-01T23:59:59.000Z

133

High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003  

SciTech Connect

The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

Rand, J. A.; Culik, J. S.

2005-10-01T23:59:59.000Z

134

Highly Efficient Dye-Sensitized Solar Cells by Using a Mesostructured Anatase TiO2 Electrode with High Dye Loading Capacity  

Science Journals Connector (OSTI)

Highly Efficient Dye-Sensitized Solar Cells by Using a Mesostructured Anatase TiO2 Electrode with High Dye Loading Capacity ... The growth and assembly of TiO2 nanostructures with enhanced charge transfer and light harvesting have attracted much attention for fabricating highly efficient dye-sensitized solar cells. ... The photovoltaic measurements indicate that the mesoporous TiO2 layer enhances the dye loading capacity, the electron transfer efficiency, and the photocurrent of the cell, contributing to the significant improvement of the energy conversion efficiency of the dye-sensitized solar cells. ...

Wei Shao; Feng Gu; Chunzhong Li; Mengkai Lu

2010-09-03T23:59:59.000Z

135

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications  

SciTech Connect

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

2014-01-01T23:59:59.000Z

136

High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane  

SciTech Connect

The optical and electrical properties of hydrogenated amorphous silicon films produced by rf glow discharge decomposition of disilane diluted in helium (Si/sub 2/H/sub 6//He = 1/9) have been studied while systematically varying the film deposition rate. The properties and composition of the films were monitored by measuring the optical band gap, IR vibrational spectrum, dark conductivity, and the photoconductivity as a function of the deposition rate. The photoluminescence of the high deposition rate films gave a peak at 1.33 eV. These films, whose properties are rather similar to those of the conventional a-Si:H films prepared from monosilane, have been used to fabricate nip-type a-Si:H solar cells. At a deposition rate of 11 A/sec, a conversion efficiency of 6.86% was obtained. This high efficiency shows that disilane is applicable for mass production fabrication of a-Si:H solar cells.

Kenne, J.; Ohashi, Y.; Matsushita, T.; Konagai, M.; Takahashi, K.

1984-01-15T23:59:59.000Z

137

Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma  

Science Journals Connector (OSTI)

Silicon oxide ( Si O 2 ) layers were formed with initial oxidation rates in the range of 6.2 – 14.1 nm ? min in the temperature range of 150 – 400 ° C by oxidizing Si(001) wafers. Such a high-rate and low-temperature oxidation was realized by using a stable glow He ? O 2 plasma excited at atmospheric pressure by a 150 MHz very high-frequency power. Increasing the temperature led to both the higher oxidation rate and the better quality of Si O 2 and Si O 2 ? Si interface. The oxidation at 400 ° C showed an interface trap density of 6.2 × 10 10 eV ? 1 cm ? 2 which is considerably lower than that in a radical oxidation process using low-pressure He ? O 2 plasma at the same temperature.

Hiroaki Kakiuchi; Hiromasa Ohmi; Makoto Harada; Heiji Watanabe; Kiyoshi Yasutake

2007-01-01T23:59:59.000Z

138

Visible Photoluminescence from Cubic (3C) Silicon Carbide Microdisks Coupled to High Quality Whispering Gallery Modes  

E-Print Network (OSTI)

We present the design, fabrication and characterization of cubic (3C) silicon carbide microdisk resonators with high quality factor modes at visible and near infrared wavelengths (600 - 950 nm). Whispering gallery modes with quality factors as high as 2,300 and corresponding mode volumes V ~ 2 ({\\lambda}/n)^3 are measured using laser scanning confocal microscopy at room temperature. We obtain excellent correspondence between transverse-magnetic (TM) and transverse-electric (TE) polarized resonances simulated using Finite Difference Time Domain (FDTD) method and those observed in experiment. These structures based on ensembles of optically active impurities in 3C-SiC resonators could play an important role in diverse applications of nonlinear and quantum photonics, including low power optical switching and quantum memories.

Radulaski, Marina; Müller, Kai; Lagoudakis, Konstantinos G; Zhang, Jingyuan Linda; Buckley, Sonia; Kelaita, Yousif A; Alassaad, Kassem; Ferro, Gabriel; Vu?kovi?, Jelena

2014-01-01T23:59:59.000Z

139

Visible Photoluminescence from Cubic (3C) Silicon Carbide Microdisks Coupled to High Quality Whispering Gallery Modes  

E-Print Network (OSTI)

We present the design, fabrication and characterization of cubic (3C) silicon carbide microdisk resonators with high quality factor modes at visible and near infrared wavelengths (600 - 950 nm). Whispering gallery modes with quality factors as high as 2,300 and corresponding mode volumes V ~ 2 ({\\lambda}/n)^3 are measured using laser scanning confocal microscopy at room temperature. We obtain excellent correspondence between transverse-magnetic (TM) and transverse-electric (TE) polarized resonances simulated using Finite Difference Time Domain (FDTD) method and those observed in experiment. These structures based on ensembles of optically active impurities in 3C-SiC resonators could play an important role in diverse applications of nonlinear and quantum photonics, including low power optical switching and quantum memories.

Marina Radulaski; Thomas M. Babinec; Kai Müller; Konstantinos G. Lagoudakis; Jingyuan Linda Zhang; Sonia Buckley; Yousif A. Kelaita; Kassem Alassaad; Gabriel Ferro; Jelena Vu?kovi?

2014-12-08T23:59:59.000Z

140

Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma  

SciTech Connect

Silicon oxide (SiO{sub 2}) layers were formed with initial oxidation rates in the range of 6.2-14.1 nm/min in the temperature range of 150-400 deg. C by oxidizing Si(001) wafers. Such a high-rate and low-temperature oxidation was realized by using a stable glow He/O{sub 2} plasma excited at atmospheric pressure by a 150 MHz very high-frequency power. Increasing the temperature led to both the higher oxidation rate and the better quality of SiO{sub 2} and SiO{sub 2}/Si interface. The oxidation at 400 deg. C showed an interface trap density of 6.2x10{sup 10} eV{sup -1} cm{sup -2}, which is considerably lower than that in a radical oxidation process using low-pressure He/O{sub 2} plasma at the same temperature.

Kakiuchi, Hiroaki; Ohmi, Hiromasa; Harada, Makoto; Watanabe, Heiji; Yasutake, Kiyoshi [Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)

2007-02-26T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Broadband, stable and highly coherent supercontinuum generation at telecommunication wavelengths in an hydrogenated amorphous silicon waveguide  

E-Print Network (OSTI)

Hydrogenated amorphous silicon (a:Si-H) has recently been recognized as a highly nonlinear CMOS compatible photonic platform. We experimentally demonstrate the generation of a supercontinuum (SC) spanning over 500 nm in a-Si:H photonic wire waveguide at telecommunication wavelengths using femtosecond input pulse with energy lower than 5 pJ. Numerical modeling of pulse propagation in the waveguide, based on the experimentally characterized dispersion profile, shows that the supercontinuum is the result of soliton fission and dispersive wave generation. It is demonstrated that the SC is highly coherent and that the waveguides do not suffer from material degradation under femtosecond pulse illumination. Finally, a direct comparison of SC generation in c-Si and a-Si:H waveguides confirms the higher performances of a-Si:H over c-Si for broadband low power SC generation at telecommunication wavelengths.

Leo, F; Kuyken, B; Roelkens, G; Gorza, S -P

2014-01-01T23:59:59.000Z

142

Calcium Compartmentation in Arabidopsis Mesophyll Cells, A Mechanism to Regulate Apoplastic Calcium, Photosynthetic Rates and Growth, Involves Low-affinity, High-capacity Ca2+/H+ Antiporters  

E-Print Network (OSTI)

Low- affinity, High-capacity Ca 2+ /H + Antiporters SimonRoger Leigh The way calcium (Ca) is stored in plants impactsaccumulation patterns for Ca across different plant

Conn, Simon J; Gilliham, Matthew; Tyerman, Stephen; Kaiser, Brent; Leigh, Roger

2009-01-01T23:59:59.000Z

143

High-Throughput Methods To Assess Lipophilic and Hydrophilic Antioxidant Capacity of Food Extracts in Vitro  

Science Journals Connector (OSTI)

Assays comprising three probes for different mechanisms of antioxidant activity in food products have been modified to allow better comparison of the contributions of the different mechanisms to antioxidant capacity (AOC). ... The mixture was incubated at 50 °C for 15 min, and the absorbance was measured at 760 nm (UV?vis spectrophotometer Lambda 12, Perkin-Elmer AG). ...

D. Jimenez-Alvarez; F. Giuffrida; F. Vanrobaeys; P. A. Golay; C. Cotting; A. Lardeau; Brendan J. Keely

2008-04-24T23:59:59.000Z

144

Direct ion flux measurements at high-pressure-depletion conditions for microcrystalline silicon deposition  

SciTech Connect

The contribution of ions to the growth of microcrystalline silicon thin films has been investigated in the well-known high-pressure-depletion (HPD) regime by coupling thin-film analysis with plasma studies. The ion flux, measured by means of a capacitive probe, has been studied in two regimes, i.e., the amorphous-to-microcrystalline transition regime and a low-to-high power regime; the latter regime had been investigated to evaluate the impact of the plasma power on the ion flux in collisional plasmas. The ion flux was found not to change considerably under the conditions where the deposited material undergoes a transition from the amorphous to the microcrystalline silicon phase; for solar-grade material, an ion-to-Si deposition flux of ?0.30 has been determined. As an upper-estimation of the ion energy, a mean ion energy of ?19 eV has been measured under low-pressure conditions (<1 mbar) by means of a retarding field energy analyzer. Combining this upper-estimate with an ion per deposited Si atom ratio of ?0.30, it is concluded that less than 6 eV is available per deposited Si atom. The addition of a small amount of SiH{sub 4} to an H{sub 2} plasma resulted in an increase of the ion flux by about 30% for higher power values, whereas the electron density, deduced from optical emission spectroscopy analysis, decreased. The electron temperature, also deduced from optical emission spectroscopy analysis, reveals a slight decrease with power. Although the dominant ion in the HPD regime is SiH{sub 3}{sup +}, i.e., a change from H{sub 3}{sup +} in pure hydrogen HPD conditions, the measured larger ion loss can be explained by assuming steeper electron density profiles. These results, therefore, confirm the results reported so far: the ion-to-Si deposition flux is relatively large but has neither influence on the microcrystalline silicon film properties nor on the phase transition. Possible explanations are the reported high atomic hydrogen to deposition flux ratio, mitigating the detrimental effects of an excessive ion flux.

Bronneberg, A. C.; Kang, X.; Palmans, J.; Janssen, P. H. J.; Lorne, T. [Applied Physics Department, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven (Netherlands)] [Applied Physics Department, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven (Netherlands); Creatore, M. [Applied Physics Department, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven (Netherlands) [Applied Physics Department, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven (Netherlands); Solliance Solar Research, High Tech Campus 5, 5656AE Eindhoven (Netherlands); Sanden, M. C. M. van de [Applied Physics Department, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven (Netherlands); Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430BE Nieuwegein (Netherlands)

2013-08-14T23:59:59.000Z

145

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.  

DOE Patents (OSTI)

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Li, Yaun-Min (Langhorne, PA); Bennett, Murray S. (Langhorne, PA); Yang, Liyou (Plainsboro, NJ)

1999-08-24T23:59:59.000Z

146

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.  

DOE Patents (OSTI)

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Li, Yaun-Min (Langhorne, PA); Bennett, Murray S. (Langhorne, PA); Yang, Liyou (Plainsboro, NJ)

1997-07-08T23:59:59.000Z

147

High-performance hybrid organic-inorganic solar cell based on planar n-type silicon  

SciTech Connect

Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

Chi, Dan [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qi, Boyuan; Wang, Jizheng [Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn; Wang, Zhanguo [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

148

Yttrium-dispersed C{sub 60} fullerenes as high-capacity hydrogen storage medium  

SciTech Connect

Interaction between hydrogen molecules and functionalized C{sub 60} is investigated using density functional theory method. Unlike transition metal atoms that tend to cluster on the surface, C{sub 60} decorated with 12 Yttrium atoms on each of its 12 pentagons is extremely stable and remarkably enhances the hydrogen adsorption capacity. Four H{sub 2} molecules can be chemisorbed on a single Y atom through well-known Dewar-Chatt-Duncanson interaction. The nature of bonding is a weak physisorption for the fifth adsorbed H{sub 2} molecule. Consequently, the C{sub 60}Y{sub 12} complex with 60 hydrogen molecules has been demonstrated to lead to a hydrogen storage capacity of ?6.30 wt. %.

Tian, Zi-Ya; Dong, Shun-Le, E-mail: dongshunle2013@hotmail.com [Department of Physics, Ocean University of China, Qingdao 266100 (China)] [Department of Physics, Ocean University of China, Qingdao 266100 (China)

2014-02-28T23:59:59.000Z

149

Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasma  

Science Journals Connector (OSTI)

It is demonstrated that the stability of hydrogenated amorphous silicon (a?Si:H) is improved by deposition under the combined conditions of high substrate temperature (e.g. T D =400?°C) and high hydrogen dilution as are readily achieved in a remote hydrogen plasma reactor. In comparison with optimized films from conventional rfglow dischargedeposition (e.g. silane 230?°C 2 W) undoped high T D films possess a lower midgap defect density the dark dc conductivity in n?type (phosphorus?doped) films displays higher equilibration temperatures and longer relaxation times at a given temperature with an activation energy of 1.0 eV and undoped high T D films have a lower saturated density of light?induced defects. It is proposed that the ability to achieve the improved stability is a consequence of two effects: (1) the use of hydrogen dilution during deposition to maintain the hydrogen concentration in the film near 10 at.?% even at 400?°C and (2) the possibility that at high T D ’s the hydrogen is more stably incorporated in the random network and/or that the density of weak Si—Si bonds is smaller.

N. M. Johnson; C. E. Nebel; P. V. Santos; W. B. Jackson; R. A. Street; K. S. Stevens; J. Walker

1991-01-01T23:59:59.000Z

150

Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation  

SciTech Connect

A key feature of silicon photomultipliers (SiPMs) that can hinder their wider use in medium and high energy physics applications is their relatively high sensitivity to high energy background radiation, with particular regard to high energy neutrons. Dosages of 1010 neq/cm2 can damage them severely. In this study, some standard versions along with some new formulations are irradiated with a high intensity 241AmBe source up to a total dose of 5 × 109 neq/cm2. Key parameters monitored include dark noise, photon detection efficiency (PDE), gain, and voltage breakdown. Only dark noise was found to change significantly for this range of dosage. Analysis of the data indicates that within each vendor's product line, the change in dark noise is very similar as a function of increasing dose. At present, the best strategy for alleviating the effects of radiation damage is to cool the devices to minimize the effects of increased dark noise with accumulated dose.

Barbosa, Fernando J. [JLAB; McKisson, John E. [JLAB; Qiang, Yi [JLAB; Steinberger, William [JLAB; Xi, Wenze [JLAB; Zorn, Carl J. [JLAB

2012-11-01T23:59:59.000Z

151

Poly[3,4-(ethylenedithio)thiophene]: High specific capacity cathode active material for lithium rechargeable batteries  

Science Journals Connector (OSTI)

Poly[3,4-(ethylenedithio)thiophene] (PEDTT) has been synthesized by oxidative-coupling polymerization of 3,4-(ethylenedithio)thiophene (EDTT) in the absence of solvent at ambient conditions. The resulting polymer has been characterized by FT-IR, XRD, TGA, UV–vis and solution NMR analyses. In addition, PEDTT has been evaluated as the cathode active material for rechargeable lithium batteries. The charge–discharge tests are carried out at room temperature. PEDTT shows discharge specific capacity above 425 mAh g?1. It is tentatively proposed that electrode reaction involves the formation of thioether cation, which imparts multi-electron redox reaction, high discharge specific capacity, high charge voltage and low discharge voltage.

Jing Tang; Zhi-Ping Song; Ning Shan; Li-Zhi Zhan; Jing-Yu Zhang; Hui Zhan; Yun-Hong Zhou; Cai-Mao Zhan

2008-01-01T23:59:59.000Z

152

High-capacity nanostructured germanium-containing materials and lithium alloys thereof  

DOE Patents (OSTI)

Electrodes comprising an alkali metal, for example, lithium, alloyed with nanostructured materials of formula Si.sub.zGe.sub.(z-1), where 0capacities, cycle lives, and/or cycling rates compared with similar electrodes made from graphite. These electrodes are useful as anodes for secondary electrochemical cells, for example, batteries and electrochemical supercapacitors.

Graetz, Jason A. (Upton, NY); Fultz, Brent T. (Pasadena, CA); Ahn, Channing (Pasadena, CA); Yazami, Rachid (Los Angeles, CA)

2010-08-24T23:59:59.000Z

153

Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode  

SciTech Connect

We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520?nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women's Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

2014-01-27T23:59:59.000Z

154

Versatile Silicon Photodiode Detector Technology for Scanning Electron Microscopy with High-Efficiency Sub-5 keV Electron Detection  

E-Print Network (OSTI)

Versatile Silicon Photodiode Detector Technology for Scanning Electron Microscopy with High for Scanning Electron Microscopy, based on ultrashallow p+ n boron-layer photodiodes, features nm-thin anodes, closely-packed photodiodes and through-wafer apertures allow flexible configurations for optimal material

Technische Universiteit Delft

155

Deposition of high-density silicon carbide coatings by fluidized-bed pyrolysis of chlorinated silane derivatives  

Science Journals Connector (OSTI)

Comparative analysis of the processes for preparation of high-density silicon carbide coatings by the fluidized-bed pyrolysis of the SiCl4 + CH4 + H2 + Ar and CH3SiCl3 + H2 + Ar mixtures on pyrocarboncoated zirco...

S. D. Kurbakov; T. A. Mireev

2009-04-01T23:59:59.000Z

156

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS  

E-Print Network (OSTI)

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al of aluminum ox- ide (Al2O3) grown by atomic layer deposition (ALD) pro- vide an excellent level of sur

157

High speed silicon electro-optical modulators enhanced via slow light propagation  

Science Journals Connector (OSTI)

While current optical communication networks efficiently carry and process huge amounts of digital information over large and medium distances, silicon photonics technology has the...

Brimont, A; Thomson, D J; Sanchis, P; Herrera, J; Gardes, F Y; Fedeli, J M; Reed, G T; Martí, J

2011-01-01T23:59:59.000Z

158

Advanced Detector Research - Fabrication and Testing of 3D Active-Edge Silicon Sensors: High Speed, High Yield  

SciTech Connect

Development of 3D silicon radiation sensors employing electrodes fabricated perpendicular to the sensor surfaces to improve fabrication yields and increasing pulse speeds.

Parker, Sherwood I

2008-09-01T23:59:59.000Z

159

Relationship between low-temperature boson heat capacity peak and high-temperature shear modulus relaxation in a metallic glass  

SciTech Connect

Low-temperature (2 K{<=}T{<=}350 K) heat capacity and room-temperature shear modulus measurements ({nu}=1.4 MHz) have been performed on bulk Pd{sub 41.25}Cu{sub 41.25}P{sub 17.5} in the initial glassy, relaxed glassy, and crystallized states. It has been found that the height of the low-temperature Boson heat capacity peak strongly correlates with the changes in the shear modulus upon high-temperature annealing. It is this behavior that was earlier predicted by the interstitialcy theory, according to which dumbbell interstitialcy defects are responsible for a number of thermodynamic and kinetic properties of crystalline, (supercooled) liquid, and solid glassy states.

Vasiliev, A. N.; Voloshok, T. N. [Department of Low Temperature Physics and Superconductivity, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Granato, A. V.; Joncich, D. M. [Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Greet Street, Urbana, Illinois 61801 (United States); Mitrofanov, Yu. P. [Department of General Physics, Voronezh State Pedagogical University, 86 Lenin Street, Voronezh 394043 (Russian Federation); Khonik, V. A. [Department of General Physics, Voronezh State Pedagogical University, 86 Lenin Street, Voronezh 394043 (Russian Federation); Research Center, Voronezh State University, Universitetskaya Sq. 1, 394006 Voronezh (Russian Federation)

2009-11-01T23:59:59.000Z

160

Audio watermarking with high embedding capacity based on multiple access techniques  

Science Journals Connector (OSTI)

Abstract This paper deals with a new digital audio watermarking scheme based on multiple access techniques. In digital communication, multiple access techniques allow several users transmissions by taking the same communication channel. The present work proposes to embed multiple sub-watermarks in the same channel that is the audio signal. Our main objective is to investigate embedding capacity (the amount of information that can be hidden) limitations of our proposed audio watermarking system. Three multiple access techniques have been employed in the new multi-watermarking system: DS-CDMA (Direct-Sequence Code Division Multiple Access), FHMA (Frequency Hopped Multiple Access) and FDMA (Frequency Division Multiple Access). Experimental results allow us to make the choice on the best multiple access technique, in the multi-watermarking system, which significantly permits the highest embedding capacity (a data embedding rate up to 6 kb/s) with almost no loss of data imperceptibility and with acceptable extraction fidelity ( BER ? 10 ? 2 ) even in presence of disturbances.

Mohammed Khalil; Abdellah Adib

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

High sensitive and selective ethylene measurement by using a large-capacity-on-chip preconcentrator device  

Science Journals Connector (OSTI)

Abstract Using a large-capacity-on-chip preconcentrator device for selective ethylene measurement leads to some challenges. The dramatic increase of the water influence and the gas chromatography effect of the preconcentrator must be known and compensated before a good measurement with this new device can be performed. Nevertheless, after facing these challenges the small gas chromatograph presented in this paper was for the first time able to detect an ethylene concentration of 170 ppbv. Deduced from this measurement a detection limit below 50 ppbv can be reached, which is absolutely mandatory for shelf life prediction of climacteric fruits. New stationary phases were tested. The used packed gas chromatography column is now capable of separating vaporized water and ethylene gas from each other, which was a breakthrough in the analysis of ethylene concentrations in ambient air. It can be predicted that the system will be available at a price under 1000 €.

S. Janssen; T. Tessmann; W. Lang

2014-01-01T23:59:59.000Z

162

Strain induced lithium functionalized graphane as a high capacity hydrogen storage material  

E-Print Network (OSTI)

Strain effects on the stability, electronic structure, and hydrogen storage capacity of lithium-doped graphane (CHLi) have been investigated by stateof-the art first principle density functional theory (DFT). Molecular dynamics MD) simulations have confirmed the stability of Li on graphane sheet when it is subject to 10% of tensile strain. Under biaxial asymmetric strain, the binding energy of Li of graphane (CH) sheet increases by 52% with respect to its bulk's cohesive energy. With 25% doping concentration of Li on CH sheet,the gravimetric density of hydrogen storage is found to reach up to 12.12wt%. The adsorption energies of H2 are found to be within the range of practical H2 storage applications.

Hussain, Tanveer; Ahuja, Rajeev

2012-01-01T23:59:59.000Z

163

Life Cycle Environmental Impact of High-Capacity Lithium Ion Battery with Silicon Nanowires Anode for Electric Vehicles  

Science Journals Connector (OSTI)

The grid electricity used in this analysis is average U.S. electricity mix with 89.56% of nonrenewable energies. ... The results demonstrate that the major opportunity for reducing the life cycle impacts of the battery pack is to use clean energy supply for battery operation, such as solar and wind electricity, which could reduce these environmental impacts significantly. ... All the above analyses including the life cycle inventory analysis, impact analysis, uncertainty, and sensitivity analysis together confirm that the LIB pack using SiNW anode from metal-assisted chemical etching could have environmental impacts comparable with those of conventional battery pack, while significantly increasing the battery energy storage and extending the driving range of EVs in the future. ...

Bingbing Li; Xianfeng Gao; Jianyang Li; Chris Yuan

2014-01-31T23:59:59.000Z

164

Solvent-free, oxidatively prepared polythiophene: High specific capacity as a cathode active material for lithium batteries  

Science Journals Connector (OSTI)

Polythiophene (PTH) was prepared by the chemical polymerization of thiophene under ambient, solvent-free conditions in the presence of FeCl3. This PTH was characterized by FTIR, UV–vis, NMR, and XRD. The NMR spectrum showed a PTH oligomer consisting of both aromatic thiophene and hydrogen-saturated tetrahydrothiophene moieties. The insoluble PTH was studied as a cathode active material for rechargeable lithium batteries with LiN(CF3SO2)2 (LiTFSI), 1,2-dimethoxyethane (DME), and 1,3-dioxolane (DOL) as electrolytes. Charge–discharge tests were conducted at room temperature. The discharge specific capacity, for levels above 400 mA h g?1, was obtained. The detected stable specific capacity and isolated, conjugated structure indicate that the charge–discharge mechanism was different from a classical ‘doping–dedoping’ process. We tentatively propose that the high specific capacity of PTH results from multi-electron electrode reactions on S atoms.

Jing Tang; Lingbo Kong; Jingyu Zhang; Lizhi Zhan; Hui Zhan; Yunhong Zhou; Caimao Zhan

2008-01-01T23:59:59.000Z

165

Fabrication of high aspect ratio silicon nanostructure arrays by metal-assisted etching  

E-Print Network (OSTI)

The goal of this research was to explore and understand the mechanisms involved in the fabrication of silicon nanostructures using metal-assisted etching. We developed a method utilizing metal-assisted etching in conjunction ...

Chang, Shih-wei, Ph.D. Massachusetts Institute of Technology

2010-01-01T23:59:59.000Z

166

Sacrificial high-temperature phosphorus diffusion gettering for lifetime improvement of multicrystalline silicon wafers  

E-Print Network (OSTI)

Iron is among the most deleterious lifetime-limiting impurities in crystalline silicon solar cells. In as-grown material, iron is present in precipitates and in point defects. To achieve conversion efficiencies in excess ...

Scott, Stephanie Morgan

2014-01-01T23:59:59.000Z

167

Composites of graphene and encapsulated silicon for practically viable high-performance lithium-ion batteries  

Science Journals Connector (OSTI)

A facile and scalable approach to synthesize silicon composite anodes has been developed by encapsulating Si particles via in situ...polymerization and carbonization of phloroglucinol-formaldehyde gel, followed b...

Xin Zhao; Minjie Li; Kuo-Hsin Chang; Yu-Ming Lin

2014-10-01T23:59:59.000Z

168

Tritium trapping in silicon carbide in contact with solid breeder under high flux isotope reactor irradiation  

SciTech Connect

The trapping of tritium in silicon carbide (SiC) injected from ceramic breeding materials was examined via tritium measurements using imaging plate (IP) techniques. Monolithic SiC in contact with ternary lithium oxide (lithium titanate and lithium aluminate) as a ceramic breeder was irradiated in the High Flux Isotope Reactor (HFIR) in Oak Ridge, Tennessee, USA. The distribution of photo-stimulated luminescence (PSL) of tritium in SiC was successfully obtained, which separated the contribution of 14C ß-rays to the PSL. The tritium incident from ceramic breeders was retained in the vicinity of the SiC surface even after irradiation at 1073 K over the duration of ~3000 h, while trapping of tritium was not observed in the bulk region. The PSL intensity near the SiC surface in contact with lithium titanate was higher than that obtained with lithium aluminate. The amount of the incident tritium and/or the formation of a Li2SiO3 phase on SiC due to the reaction with lithium aluminate under irradiation likely were responsible for this observation.

H. Katsui; Y. Katoh; A. Hasegawa; M. Shimada; Y. Hatano; T. Hinoki; S. Nogami; T. Tanaka; S. Nagata; T. Shikama

2013-11-01T23:59:59.000Z

169

Silicon Carbide Temperature Monitor Measurements at the High Temperature Test Laboratory  

SciTech Connect

Silicon carbide (SiC) temperature monitors are now available for use as temperature sensors in Advanced Test Reactor (ATR) irradiation test capsules. Melt wires or paint spots, which are typically used as temperature sensors in ATR static capsules, are limited in that they can only detect whether a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that may have occurred during irradiation. As part of the efforts initiated by the ATR National Scientific User Facility (NSUF) to make SiC temperature monitors available, a capability was developed to complete post-irradiation evaluations of these monitors. As discussed in this report, the Idaho National Laboratory (INL) selected the resistance measurement approach for detecting peak irradiation temperature from SiC temperature monitors. This document describes the INL efforts to develop the capability to complete these resistance measurements. In addition, the procedure is reported that was developed to assure that high quality measurements are made in a consistent fashion.

J. L. Rempe; K. G. Condie; D. L. Knudson; L. L. Snead

2010-01-01T23:59:59.000Z

170

Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma  

Science Journals Connector (OSTI)

Low refractive index silicon oxide films were deposited using atmospheric-pressure He/SiH4/CO2 plasma excited by a 150-MHz very high-frequency power. Significant increase in deposition rate at room temperature could prevent the formation of dense SiO2 network, decreasing refractive index of the resulting film effectively. As a result, a silicon oxide film with the lowest refractive index, n = 1.24 at 632.8 nm, was obtained with a very high deposition rate of 235 nm/s. The reflectance and transmittance spectra showed that the low refractive index film functioned as a quarter-wave anti-reflection coating of a glass substrate.

H. Kakiuchi; H. Ohmi; Y. Yamaguchi; K. Nakamura; K. Yasutake

2010-01-01T23:59:59.000Z

171

Vehicle Technologies Office Merit Review 2014: Metal-Based High Capacity Li-Ion Anodes  

Energy.gov (U.S. Department of Energy (DOE))

Presentation given by Binghamton University-SUNY at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about metal-based high...

172

Vehicle Technologies Office Merit Review 2014: High-Capacity Polyanion Cathodes  

Energy.gov (U.S. Department of Energy (DOE))

Presentation given by The University of Texas at Austin at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high...

173

Nanosheet-structured LiV3O8 with high capacity and excellent...  

NLE Websites -- All DOE Office Websites (Extended Search)

Highly stable LiV3O8 with a nanosheet-structure was successfully prepared using polyethylene glycol (PEG) polymer in the precursor solution as the structure modifying agent,...

174

Edge photoluminescence of single-crystal silicon with a p-n junction: Structures produced by high-efficiency solar cell technology  

Science Journals Connector (OSTI)

The systematic features and kinetics of edge photoluminescence of silicon structures produced by the high-efficiency solar cell technology is studied at different voltages applied to...p-n junction. It is shown t...

A. M. Emel’yanov

2011-06-01T23:59:59.000Z

175

Process for producing silicon nitride based articles of high fracture toughness and strength  

DOE Patents (OSTI)

A process for producing a silicon nitride-based article of improved fracture toughness and strength. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12 m.sup.2 /g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

Huckabee, Marvin (Marlboro, MA); Buljan, Sergej-Tomislav (Acton, MA); Neil, Jeffrey T. (Acton, MA)

1991-01-01T23:59:59.000Z

176

Process for producing silicon nitride based articles of high fracture toughness and strength  

DOE Patents (OSTI)

A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

Huckabee, M.; Buljan, S.T.; Neil, J.T.

1991-09-10T23:59:59.000Z

177

Modeling and Analysis of Ultra High Capacity Optical Networks Arnold Bragg  

E-Print Network (OSTI)

provisioning. E.g., the high energy physics community uses "lambda grids" for Terabyte file transfers; others using today's methods and tools. Discrete event and hybrid simulators, and (near) real time network network behaviors; a fast hybrid simulator to inject traffic and network impairments; and a supervisory

Perros, Harry

178

Multiple-part-type systems in high volume manufacturing : long-term capacity planning & time-based production control  

E-Print Network (OSTI)

This project examines a production station that faces fluctuating demand with seasonal pattern. The cumulative capacity exceeds the cumulative demand in a one year period; however, its weekly capacity is not able to meet ...

Hua, Xia, M. Eng. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

179

Capacity allocation of a hybrid energy storage system for power system peak shaving at high wind power penetration level  

Science Journals Connector (OSTI)

Abstract High wind power penetration in power system leads to a significant challenge in balancing power production and consumption due to the intermittence of wind. Introducing energy storage system in wind energy system can help offset the negative effects, and make the wind power controllable. However, the power spectrum density of wind power outputs shows that the fluctuations of wind energy include various components with different frequencies and amplitudes. This implies that the hybrid energy storage system is more suitable for smoothing out the wind power fluctuations effectively rather than the independent energy storage system. In this paper, we proposed a preliminary scheme for capacity allocation of hybrid energy storage system for power system peak shaving by using spectral analysis method. The unbalance power generated from load dispatch plan and wind power outputs is decomposed into four components, which are outer-day, intra-day, short-term and very short-term components, by using Discrete Fourier Transform (DFT) and spectral decomposition method. The capacity allocation can be quantified according to the information in these components. The simulation results show that the power rating and energy rating of hybrid energy storage system in partial smoothing mode decrease significantly in comparison with those in fully smoothing mode.

Pan Zhao; Jiangfeng Wang; Yiping Dai

2015-01-01T23:59:59.000Z

180

New, high-capacity, calcium-based sorbents: Calcium silicate sorbents. Final report  

SciTech Connect

A search is being carried out for new calcium-based SO{sub 2} sorbents for induct injection. More specifically, a search is being carried out for induct injection calcium silicate sorbents that are highly cost effective. The objectives of the past year were to study the sorption of SO{sub 2} by representative calcium silicates, to study the composition of the Ca(OH){sub 2}-fly ash sorbent, and to install a humidity sensor in the sorption system.

Kenney, M.E.; Chiang, Ray-Kuang

1993-09-30T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

New high-capacity, calcium-based sorbents, calcium silicate sorbents. Final report  

SciTech Connect

A search is being carried out for new calcium-based SO{sub 2} sorbents for induct injection. More specifically, a search is being carried out for induct injection calcium silicate sorbents that are highly cost effective. The current year objectives include the study of sorbents made by hydrating ordinary or Type I portland cement or portland cement clinker (a cement intermediate) under carefully selected conditions. Results of this study show that an excellent portland cement sorbent can be prepared by milling cement at 120{degrees}C at 600 rpm for 15 minutes with MgO-stabilized ZrO{sub 2} beads. They also show that clinker, which is cheaper than cement can be used interchangeably with cement as a starting material. Further, it is clear that while a high surface area may be a desirable property of a good sorbent, it is not a requisite property. Among the hydration reaction variables, milling time is highly important, reaction temperature is important and stirring rate and silicate-to-H{sub 2}O ratio are moderately important. The components of hydrated cement sorbent are various combinations of C-S-H, calcium silicate hydrate:Ca(OH){sub 2};AFm. a phase in hydrated cement.

Kenney, M.E.

1996-02-28T23:59:59.000Z

182

Design and Synthesis of Novel Porous Metal-Organic Frameworks (MOFs) Toward High Hydrogen Storage Capacity  

SciTech Connect

Statement of Objectives: 1. Synthesize viable porous MOFs for high H2 storage at ambient conditions to be assessed by measuring H2 uptake. 2. Develop a better understanding of the operative interactions of the sorbed H2 with the organic and inorganic constituents of the sorbent MOF by means of inelastic neutron scattering (INS, to characterize the H2-MOF interactions) and computational studies (to interpret the data and predict novel materials suitable for high H2 uptake at moderate temperatures and relatively low pressures). 3. Synergistically combine the outcomes of objectives 1 and 2 to construct a made-to-order inexpensive MOF that is suitable for super H2 storage and meets the DOE targets - 6% H2 per weight (2kWh/kg) by 2010 and 9% H2 per weight (3kWh/kg) by 2015. The ongoing research is a collaborative experimental and computational effort focused on assessing H2 storage and interactions with pre-selected metal-organic frameworks (MOFs) and zeolite-like MOFs (ZMOFs), with the eventual goal of synthesizing made-to-order high H2 storage materials to achieve the DOE targets for mobile applications. We proposed in this funded research to increase the amount of H2 uptake, as well as tune the interactions (i.e. isosteric heats of adsorption), by targeting readily tunable MOFs:

Mohamed, Eddaoudi [USF; Zaworotko, Michael [USF; Space, Brian [USF; Eckert, Juergen [USF

2013-05-08T23:59:59.000Z

183

Development of a High Solid-Angle Silicon Detector Array for Measurement of Transfer Reactions in Inverse Kinematics  

SciTech Connect

The development of high quality radioactive beams, such as those at the HRIBF at Oak Ridge National Laboratory, has made possible the measurement of transfer reactions in inverse kinematics on unstable nuclei. Measurement of (d,p) reactions on neutron-rich nuclei yield data on the evolution of nuclear structure away from stability, and are of astrophysical interest due to the proximity of suggested nuclear burning paths in the astrophysical r-process in supernovae. Experimentally, (d,p) reactions on heavy (Z = 50) fission fragments are complicated by the strongly inverse kinematics, and the relatively low beam intensities. Consequently, ejectile detection with high resolution in position and energy, a high dynamic range and a high solid angular coverage is required. The Oak Ridge Rutgers University Barrel Array (ORRUBA) is a new silicon detector array currently under construction, optimized for the measurement of (d,p) reactions in inverse kinematics. It consists of two rings of silicon detectors, providing a high solid angular coverage for angles symmetrically forward and backward of 90 degrees. Resistive strip detectors are used to obtain high precision position and energy measurement of reaction ejectiles.

Pain, S. D. [Rutgers University; Cizewski, J. A. [Rutgers University; Hatarik, Robert [Rutgers University; Jones, K. L. [University of Tennessee, Knoxville (UTK); Thomas, J. S. [Rutgers University; Bardayan, Daniel W [ORNL; Blackmon, Jeff C [ORNL; Nesaraja, Caroline D [ORNL; Smith, Michael Scott [ORNL; Kozub, R. L. [Tennessee Technological University; Johnson, Micah [ORNL

2007-01-01T23:59:59.000Z

184

Reversible Three-Electron Redox Behaviors of FeF3 Nanocrystals as High-Capacity Cathode-Active Materials for Li-Ion Batteries  

Science Journals Connector (OSTI)

Reversible Three-Electron Redox Behaviors of FeF3 Nanocrystals as High-Capacity Cathode-Active Materials for Li-Ion Batteries ... Three types of FeF3 nanocrystals were synthesized by different chemical routes and investigated as a cathode-active material for rechargeable lithium batteries. ... (1-3) Though many types of metal oxides and phosphates have been tested as alternative cathode materials,(4, 5) no real breakthrough has been achieved in capacity, especially for intercalation cathodes, the capacity-determining electrode in the present LIBs systems. ...

Ting Li; Lei Li; Yu L. Cao; Xin P. Ai; Han X. Yang

2010-01-28T23:59:59.000Z

185

High-speed digitization readout of silicon photomultipliers for time of flight positron emission tomography  

SciTech Connect

We report on work to develop a system with about 100 picoseconds (ps) time resolution for time of flight positron emission tomography [TOF-PET]. The chosen photo detectors for the study were Silicon Photomultipliers (SiPM's). This study was based on extensive experience in studying timing properties of SiPM's. The readout of these devices used the commercial high speed digitizer DRS4. We applied different algorithms to get the best time resolution of 155 ps Guassian (sigma) for a LYSO crystal coupled to a SiPM. We consider the work as a first step in building a prototype TOF-PET module. The field of positron-emission-tomography (PET) has been rapidly developing. But there are significant limitations in how well current PET scanners can reconstruct images, related to how fast data can be acquired, how much volume they can image, and the spatial and temporal resolution of the generated photons. Typical modern scanners now include multiple rings of detectors, which can image a large volume of the patient. In this type of scanner, one can treat each ring as a separate detector and require coincidences only within the ring, or treat the entire region viewed by the scanner as a single 3 dimensional volume. This 3d technique has significantly better sensitivity since more photon pair trajectories are accepted. However, the scattering of photons within the volume of the patient, and the effect of random coincidences limits the technique. The advent of sub-nanosecond timing resolution detectors means that there is potentially much better rejection of scattered photon events and random coincidence events in the 3D technique. In addition, if the timing is good enough, then the origin of photons pairs can be determined better, resulting in improved spatial resolution - so called 'Time-of-Flight' PET, or TOF-PET. Currently a lot of activity has occurred in applications of SiPMs for TOF-PET. This is due to the devices very good time resolution, low profile, lack of high voltage needed, and their non-sensitivity to magnetic fields. While investigations into this technique have begun elsewhere, we feel that the extensive SiPM characterization and data acquisition expertise of Fermilab, and the historical in-depth research of PET imaging at University of Chicago will combine to make significant strides in this field. We also benefit by a working relationship with the SiPM producer STMicroelectronics (STM).

Ronzhin, A.; Los, S.; Martens, M.; Ramberg, E.; /Fermilab; Kim, H.; Chen, C.; Kao, C.; /Chicago U.; Niessen, K.; /SUNY, Buffalo; Zatserklyaniy, A.; /Puerto Rico U., Mayaguez; Mazzillo, M.; Carbone, B.; /SGS Thomson, Catania

2011-02-01T23:59:59.000Z

186

New Nanostructured Li2S/Silicon Rechargeable Battery with High Specific Energy  

E-Print Network (OSTI)

of the active electrode materials. KEYWORDS Energy storage, lithium-sulfur battery, mesoporous carbon, silicon. Current cathode materials, such as those based on transition metal oxides and phosphates, have an inherent T. McDowell,,§ Ariel Jackson,,§ Judy J. Cha, Seung Sae Hong, and Yi Cui*, Department of Materials

Cui, Yi

187

Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach  

E-Print Network (OSTI)

´ a , Rolf Brendel a,b a Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal Doping (LTD) as well as standard tube furnace phosphorus diffusion. We find a considerably smaller J0 for process optimization. & 2012 Elsevier B.V. All rights reserved. 1. Introduction In silicon solar cells

188

Mechanism for high hydrogen storage capacity on metal-coated carbon nanotubes: A first principle analysis  

SciTech Connect

The hydrogen adsorption and binding mechanism on metals (Ca, Sc, Ti and V) decorated single walled carbon nanotubes (SWCNTs) are investigated using first principle calculations. Our results show that those metals coated on SWCNTs can uptake over 8 wt% hydrogen molecules with binding energy range -0.2--0.6 eV, promising potential high density hydrogen storage material. The binding mechanism is originated from the electrostatic Coulomb attraction, which is induced by the electric field due to the charge transfer from metal 4s to 3d. Moreover, we found that the interaction between the H{sub 2}-H{sub 2} further lowers the binding energy. - Graphical abstract: Five hydrogen molecules bound to individual Ca decorated (8, 0) SWCNT : a potential hydrogen-storage material. Highlights: Black-Right-Pointing-Pointer Each transition metal atom can adsorb more than four hydrogen molecules. Black-Right-Pointing-Pointer The interation between metal and hydrogen molecule is electrostatic coulomb attraction. Black-Right-Pointing-Pointer The electric field is induced by the charge transfer from metal 4s to metal 3d. Black-Right-Pointing-Pointer The adsorbed hydrogen molecules which form supermolecule can further lower the binding energy.

Lu, Jinlian; Xiao, Hong [Department of Physics and Institute for nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan Province 411105 (China)] [Department of Physics and Institute for nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan Province 411105 (China); Cao, Juexian, E-mail: jxcao@xtu.edu.cn [Department of Physics and Institute for nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan Province 411105 (China)] [Department of Physics and Institute for nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan Province 411105 (China)

2012-12-15T23:59:59.000Z

189

Silicone metalization  

DOE Patents (OSTI)

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2006-12-05T23:59:59.000Z

190

Liquid-phase plasma synthesis of silicon quantum dots embedded in carbon matrix for lithium battery anodes  

SciTech Connect

Graphical abstract: - Highlights: • Silicon quantum dots embedded in carbon matrix (SiQDs/C) were fabricated. • SiQDs/C exhibits excellent battery performance as anode materials with high specific capacity. • The good performance was attributed to the marriage of small sized SiQDs and carbon. - Abstract: Silicon quantum dots embedded in carbon matrix (SiQDs/C) nanocomposites were prepared by a novel liquid-phase plasma assisted synthetic process. The SiQDs/C nanocomposites were demonstrated to show high specific capacity, good cycling life and high coulmbic efficiency as anode materials for lithium-ion battery.

Wei, Ying [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); College of Chemistry and Chemical Engineering, Bohai University, Jinzhou 121000 (China); Yu, Hang; Li, Haitao; Ming, Hai; Pan, Keming; Huang, Hui [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Liu, Yang, E-mail: yangl@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Kang, Zhenhui, E-mail: zhkang@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China)

2013-10-15T23:59:59.000Z

191

Polyacrylamide/Ni0.02Zn0.98O Nanocomposite with High Solar Light Photocatalytic Activity and Efficient Adsorption Capacity for Toxic Dye Removal  

Science Journals Connector (OSTI)

Polyacrylamide/Ni0.02Zn0.98O Nanocomposite with High Solar Light Photocatalytic Activity and Efficient Adsorption Capacity for Toxic Dye Removal ... The effect of adsorption capacity of cross-linked polyacrylamide on photocatalytic activity of Ni0.02Zn0.98O was also studied. ... A significant removal efficiency of 99.17% for RB and 96.55% for MG was achieved in 2 h of solar illumination in the presence of the nanocomposite. ...

Amit Kumar; Gaurav Sharma; Mu Naushad; Pardeep Singh; Susheel Kalia

2014-09-13T23:59:59.000Z

192

Simulation and design of various configurations of silicon detectors for high irradiation tolerance up to 6x10{sup 14} n/cm{sup 2} in LHC application  

SciTech Connect

Various new configurations (n{sup +}/p/p{sup +}, n{sup +}/n/p{sup +}, and p{sup +}/n/n{sup +}) of silicon detector designs have been simulated using processing and device simulation tools, before and after irradiation to various fluences. The aim of material selection and detector design is to ensure adequate charge collection after being irradiated up to 10{sup 15} n/cm{sup 2} (or 6x10{sup 14}{pi}/cm{sup 2}) in LHC environment, which corresponds to a net increase (with long term anneal) of space charge of 7x10{sup 13} cm{sup -3}. Starting materials selected for simulations include high resistivity p-type silicon, medium and low resistivity n-type silicon. Design of multi-guard-rings structure for high voltage operation is also considered. First irradiation data of low resistivity silicon detector is presented.

Li, Z.; Chen, W.; Beuttenmuller, R. [and others

1997-06-01T23:59:59.000Z

193

Nanosheet-structured LiV3O8 with high capacity and excellent stability for high energy lithium batteries  

E-Print Network (OSTI)

). More envi- ronmentally benign and sustainable energy-storage systems are desired for future power for high-energy lithium battery applications. 1. Introduction Energy storage and conversion have sources.1­6 Lithium-ion batteries are considered to be the most promising energy-storage systems

Cao, Guozhong

194

Luminescent Study of Recombination Processes in the Single-Crystal Silicon and Silicon Structures Fabricated Using High-Efficiency Solar Cell Technology  

Science Journals Connector (OSTI)

Some results of the author’s researches in the last decade of the luminescence in the region of the fundamental absorption edge (edge luminescence) of the single-crystal silicon (c-Si), including structures which...

A. M. Emel’yanov

2014-01-01T23:59:59.000Z

195

High temperature superconducting step-edge SNS Josephson junctions on silicon substrates  

SciTech Connect

The authors have fabricated and tested YBCO step-edge SNS Josephson junctions on silicon substrates. The silicon step edges were patterned photolithographically and reactively ion etched using an SF{sub 6} plasma. The structures were fabricated through sequential angled pulsed laser deposition of yttria stabilized zirconia, YBCO, and gold layers, followed by photolithographic patterning and ion milling. The completed devices showed resistively shunted junction (RSJ)-like current voltage characteristics and microwave induced Shapiro Steps. Critical currents as large as 84 {micro}A and resistances of order 0.5 {Omega} were obtained. Measurable critical currents were observed up to 76 K. The authors report on the fabrication and properties of these junctions.

Rosenthal, P.A.; Cosgrove, J.E.; Fenner, D.B.; Rudman, D.A. [Advanced Fuel Research, Inc., East Hartford, CT (United States); Vale, L.R.; Ono, R.H. [NIST, Boulder, CO (United States)

1996-11-01T23:59:59.000Z

196

High electric field effects on the thermal generation in hydrogenated amorphous silicon  

SciTech Connect

The authors have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.

Ilie, A.; Equer, B.

1997-07-01T23:59:59.000Z

197

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

DOE Patents (OSTI)

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

1999-01-01T23:59:59.000Z

198

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

DOE Patents (OSTI)

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

2002-01-01T23:59:59.000Z

199

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

SciTech Connect

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

200

Fundamentals of Capacity Control  

Science Journals Connector (OSTI)

Whereas capacity planning determines in advance the capacities required to implement a production program, capacity control determines the actual capacities implemented shortly beforehand. The capacity control...

Prof. Dr.-Ing. habil. Hermann Lödding

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Impedance Analysis of Silicon Nanowire Lithium Ion Battery Anodes Riccardo Ruffo,  

E-Print Network (OSTI)

resistance and solid state diffusion through the bulk of the nanowires. The surface process is dominatedImpedance Analysis of Silicon Nanowire Lithium Ion Battery Anodes Riccardo Ruffo, Seung Sae Hong as a high-capacity anode in a lithium ion battery. The ac response was measured by using impedance

Cui, Yi

202

The Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposition for High Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications Preprint Alan Goodrich, Michael Woodhouse, and Peter Hacke Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin, Texas June 3-8, 2012 Conference Paper NREL/CP-6A20-55477 June 2012 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (Alliance), a contractor of the US Government under Contract No. DE-AC36-08GO28308. Accordingly, the US Government and Alliance retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government.

203

Experimental results with cryogenically cooled, thin, silicon crystal x-ray monochromators on high-heat-flux beamlines  

SciTech Connect

A novel, silicon crystal monochromator has been designed and tested for use on undulator and focused wiggler beamlines at third-generation synchrotron sources. The crystal utilizes a thin, partially transmitting diffracting element fabricated within a liquid-nitrogen cooled, monolithic block of silicon. This report summarizes the results from performance tests conducted at the European Synchrotron Radiation Facility (ESRF) using a focused wiggler beam and at the Advanced Photon Source (APS) on an undulator beamline. These experiments indicate that a cryogenic crystal can handle the very high power and power density x-ray beams of modem synchrotrons with sub-arcsec thermal broadening of the rocking curve. The peak power density absorbed on the surface of the crystal at the ESRF exceeded go W/mm{sup 2} with an absorbed power of 166 W, this takes into account the spreading of the beam due to the Bragg angle of 11.4{degrees}. At the APS, the peak heat flux incident on the crystal was 1.5 W/mA/mm{sup 2} with a power of 6.1 W/mA for a 2.0 H x 2.5 V mm{sup 2} beam at an undulator gap of 11.1 mm and stored current up to 96 mA.

Rogers, C.S.; Mills, D.M.; Lee, W.K.; Fernandez, P.B.; Graber, T.

1996-08-01T23:59:59.000Z

204

Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology  

Science Journals Connector (OSTI)

Abstract Stimulated by the extreme market conditions, the increase in performance and the reduction of manufacturing costs of standard crystalline silicon solar cells and modules have been quite significant in the last years. This progress was achieved mainly by process and material improvements avoiding additional process complexity. As todays cells are predominantly limited by optical and recombination losses at the rear surface, dielectric rear surface passivation represents an obvious approach to overcome the limitations. In recent years several concepts have been developed to implement dielectric rear side passivation into industrial-scale mass production. In this paper a short review is given about the evolution of dielectric rear side passivation technologies as well as on state-of-the-art cell and module results. Simple and cost effective cell and module designs utilizing standard as well as innovative manufacturing technologies are presented. Furthermore, it is shown that for all major steps multiple process options are available to further reduce the manufacturing costs. Using an optimized emitter and screen-printed metallization on commercially available 156 mm×156 mm p-type Czochralski-grown crystalline silicon wafers best cell efficiencies of 19.9% without dielectric rear surface passivation and 21.0% with dielectric rear surface passivation are demonstrated. Replacing the screen-printed front contacts by electroplated nickel–copper contacts record efficiencies of up to 21.3% are reached. By optimizing the module design and materials to reduce the resistive and optical losses, a peak module power of up to 306 W and 19.5% aperture area efficiency are achieved.

Axel Metz; Dennis Adler; Stefan Bagus; Henry Blanke; Michael Bothar; Eva Brouwer; Stefan Dauwe; Katharina Dressler; Raimund Droessler; Tobias Droste; Markus Fiedler; Yvonne Gassenbauer; Thorsten Grahl; Norman Hermert; Wojtek Kuzminski; Agata Lachowicz; Thomas Lauinger; Norbert Lenck; Mihail Manole; Marcel Martini; Rudi Messmer; Christine Meyer; Jens Moschner; Klaus Ramspeck; Peter Roth; Ruben Schönfelder; Berthold Schum; Jörg Sticksel; Knut Vaas; Michael Volk; Klaus Wangemann

2014-01-01T23:59:59.000Z

205

Subeutectic Growth of Single-Crystal Silicon Nanowires Grown on and Wrapped with Graphene Nanosheets: High-Performance Anode Material for Lithium-Ion Battery  

Science Journals Connector (OSTI)

Subeutectic Growth of Single-Crystal Silicon Nanowires Grown on and Wrapped with Graphene Nanosheets: High-Performance Anode Material for Lithium-Ion Battery ... Yu, A.; Park, H. W.; Davies, A.; Higgins, D.; Chen, Z.; Xaio, X.Free-Standing Layer-by-Layer Hybrid Thin Film of Graphene-MnO2 Nanotube as Anode for Lithium Ion Batteries J. Phys. ...

Fathy M Hassan; Abdel Rahman Elsayed; Victor Chabot; Rasim Batmaz; Xingcheng Xiao; Zhongwei Chen

2014-07-31T23:59:59.000Z

206

Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013  

SciTech Connect

Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

Ravi, T. S.

2013-05-01T23:59:59.000Z

207

Vehicle Technologies Office Merit Review 2014: Wiring Up Silicon Nanostructures for High Energy Lithium-Ion Battery Anodes  

Energy.gov (U.S. Department of Energy (DOE))

Presentation given by Stanford University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about wiring up silicon...

208

Highly Unsaturated Hydrogenated Silicon Clusters, SinHx (n = 3?10, x = 0?3), in Flash Pyrolysis of Silane and Disilane  

Science Journals Connector (OSTI)

Highly Unsaturated Hydrogenated Silicon Clusters, SinHx (n = 3?10, x = 0?3), in Flash Pyrolysis of Silane and Disilane ... Bare and partially hydrogenated neutral silicon clusters, SinHx (n = 3?10, x = 0?3), were produced upon flash pyrolysis of dilute (1%) mixtures of disilane, Si2H6, in Ar and of silane, SiH4, in He at temperatures above ?1000 K. Immediately following the flash pyrolysis of the precursors (on an ?20 ?s time scale), the clusters were isolated in a supersonic molecular beam and detected by single vacuum ultraviolet (VUV) photon (? = 118.2 ... 6 Other conventional methods of pyrolysis of silane and disilane have resulted in the production of silicon particles (>5 nm) that contain ?10?30% mole fraction of hydrogen, have near saturation surface coverage with hydrogen, and are suspected precursors to a-Si:H growth. ...

Steven D. Chambreau; Liming Wang; Jingsong Zhang

2002-05-01T23:59:59.000Z

209

Improved high-efficiency silicon concentrator cells for medium concentration applications  

SciTech Connect

This report describes efforts toward design simplification of Si concentrator cells capable of efficiencies in the 25-30% range. A discussion is given on the principal issues involved in the design and fabrication of both backside-contact cells and cells with frontside grids. Several proposed designs are detailed. Results include 23% two-sided 1.5625 cm/sup 2/ cells operating at 14 W/cm/sup 2/ of incident power. This simple design requires only one mask alignment and should approach 25% with further development. With an additional alignment, cells that are 27% efficient are feasible. Neither of these designs will require prismatic cover glasses to achieve this performance. In addition, a new backside contact cell design is described that requires only one mask and no alignments. Cells of this type were demonstrated to be 15.4% efficient at 4 W/cm/sup 2/, without AR coatings or texturization. Fundamental studies of the limiting parameters indicate that the design will exceed 25% in efficiency when fully developed. Finally, a new light-trapping scheme is proposed which could have the effect of increasing the attainable efficiencies of silicon concentrator cells to 32-33%. This same scheme might also be utilized in ways which would allow very simple low-cost cell designs to achieve results comparable to the best cells demonstrated to date. Assorted other practically-oriented results on metalization development, cell mounting, and qualification tests are also presented. 26 refs., 31 figs.

Sinton, R.A.; Swanson, R.M.

1989-02-01T23:59:59.000Z

210

Proton effects on low noise and high responsivity silicon-based photodiodes for space environment  

SciTech Connect

A series of proton irradiations has been carried out on p-n silicon photodiodes for the purpose of assessing the suitability of these devices for the European Galileo space mission. The irradiations were performed at energies of 60, 100, and 150 MeV with proton fluences ranging from 1.7x10{sup 10} to 1x10{sup 11} protons/cm{sup 2}. Dark current, spectral responsivity, and dark current noise were measured before and after each irradiation step. We observed an increase in both dark current, dark current noise, and noise equivalent power and a drop of the spectral responsivity with increasing displacement damage dose. An analytical model has been developed to investigate proton damage effects through the modeling of the electro-optical characteristics of the photodiode. Experimental degradations were successfully explained taking into account the degradation of the minority carrier diffusion length in the N-region of the photodiode. The degradation model was then applied to assess the end-of-life performance of these devices in the framework of the Galileo mission.

Pedroza, Guillaume; Gilard, Olivier [Centre National d'Etudes Spatiales, 18 Avenue E. Belin, 31401 Toulouse Cedex 4 (France); Bourqui, Marie-Lise; Bechou, Laurent; Deshayes, Yannick [IMS Laboratory, University of Bordeaux I-ENSEIRB-CNRS, UMR 5218, 351 Cours de la Liberation, 33405 Talence Cedex (France); How, Lip Sun; Rosala, Francois [AdvEOTec, 6/8 Rue de la Closerie, Lisses-ZAC Clos aux Pois, 91052 Evry Cedex (France)

2009-01-15T23:59:59.000Z

211

Process for forming retrograde profiles in silicon  

DOE Patents (OSTI)

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Weiner, K.H.; Sigmon, T.W.

1996-10-15T23:59:59.000Z

212

Process for forming retrograde profiles in silicon  

DOE Patents (OSTI)

A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

1996-01-01T23:59:59.000Z

213

Nonlinear propagation of ultrafast 1.5 m pulses in high-index-contrast silicon-on-insulator waveguides  

E-Print Network (OSTI)

laser pulses with peak powers up to 400 W is studied experimentally and theoretically. The dominant-refractive-index-contrast HRIC optical waveguides consisting of silicon cores surrounded by air and/or oxide cladding regions can influencing the propagation of short laser pulses inside silicon waveguides. These effects have been studied

Sipe,J. E.

214

Changes in Silicone Polymeric Fluids due to High-Energy Radiation  

Science Journals Connector (OSTI)

...Fluids due to High-Energy Radiation A. Charlesby When subjected to high-energy radiation, polydimethyl...confirmed by elastic measurements. Unit pile radiation is found...cross-linking. The energy per cross-link is about...

1955-01-01T23:59:59.000Z

215

Fact Sheet: Award-Winning Silicon Carbide Power Electronics ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Award-Winning Silicon Carbide Power Electronics (October 2012) Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012) Operating at high temperatures and with...

216

athermal silicon microring: Topics by E-print Network  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Websites Summary: . If it is applied in direct contact to silicon, this intrinsic tensile stress can result in a high mechanical stress in the underlying silicon...

217

Nanostructured ion beam-modified Ge films for high capacity Li ion battery N. G. Rudawski, B. L. Darby, B. R. Yates, K. S. Jones, R. G. Elliman et al.  

E-Print Network (OSTI)

Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes N. G. Rudawski, B718 (2012) Thermal properties of the hybrid graphene-metal nano-micro-composites: Applications://apl.aip.org/authors #12;Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes N. G. Rudawski,1

Florida, University of

218

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD  

SciTech Connect

Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H{sub 2}, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are reduced; (3) surface hydrogen removal--heavier and more energetic helium ions break the Si-H much easier than hydrogen ions. The preferential attachment of Si-H to Ge-H is reduced. They also found that with the small amount of hydrogen put into the plasma, the superior properties of a-(Si,Ge):H made from pure hydrogen dilution plasma were still maintained. These hydrogen ions help to remove the subsurface weakly bonded hydrogen and buried hydrogen. They also help to passivate the Ge-dangling bond.

Yong Liu

2002-05-31T23:59:59.000Z

219

Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon  

Science Journals Connector (OSTI)

Gas phase diagnosis of disilane/hydrogen plasma was carried out using mass spectrometry. At high growth rate (20 Å/s) conditions using pure disilane as a source gas, the partial pressure of disilane molecules measured by mass spectrometry was more than one order of magnitude higher than in the case when mono-silane was used as a source gas. The stability of amorphous silicon films prepared from disilane was improved by the hydrogen dilution technique, although the disilane partial pressure in this condition was much higher than in the case when mono-silane was used as a source gas for device quality films. The relation between the gas phase species and the stability of the resulting films is studied. It was found that increase in disilane related signal intensity do not decrease film stability directly.

Wataru Futako; Tomoko Takagi; Tomonori Nishimoto; Michio Kondo; Isamu Shimizu; Akihisa Matsuda

1999-01-01T23:59:59.000Z

220

High silicon content silylating reagents for dry-developed positive-tone resists for extreme ultraviolet (13.5 nm) and deep ultraviolet (248 nm) microlithography  

SciTech Connect

Recent results in the use of disilanes as silylating reagents for near-surface imaging with deep-UV (248 nm) and EUV (13.5 nm) lithography are reported. A relatively thin imaging layer of a photo-cross-linking resist is spun over a thicker layer of hard-baked resist that functions as a planarizing layer and antireflective coating. Photoinduced acid generation and subsequent heating crosslinks and renders exposed areas impermeable to an aminodisilane that reacts with the unexposed regions. Subsequent silylation and reactive ion etching afford a positive-tone image. The use of disilanes introduces a higher concentration of silicon into the polymer than is possible with silicon reagents that incorporate only one silicon atom per reactive site. The higher silicon content in the silylated polymer increases etching selectivity between exposed and unexposed regions and thereby increases the contrast. Additional improvements that help to minimize flow during silylation are also discussed, including the addition of bifunctional disilanes. We have resolved high aspect ratio, very high quality 0.20 {mu}m line and space patterns at 248 nm with a stepper having a numerical aperture (NA)= 0.53, and have resolved {<=} 0.15 {mu}m line and spaces at 13.5 nm.

Wheeler, D.; Scharrer, E.; Kubiak, G. [and others

1994-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Atmospheric Crude Oil Distillation Operable Capacity  

Gasoline and Diesel Fuel Update (EIA)

(Barrels per Calendar Day) (Barrels per Calendar Day) Data Series: Total Number of Operable Refineries Number of Operating Refineries Number of Idle Refineries Atmospheric Crude Oil Distillation Operable Capacity (B/CD) Atmospheric Crude Oil Distillation Operating Capacity (B/CD) Atmospheric Crude Oil Distillation Idle Capacity (B/CD) Atmospheric Crude Oil Distillation Operable Capacity (B/SD) Atmospheric Crude Oil Distillation Operating Capacity (B/SD) Atmospheric Crude Oil Distillation Idle Capacity (B/SD) Vacuum Distillation Downstream Charge Capacity (B/SD) Thermal Cracking Downstream Charge Capacity (B/SD) Thermal Cracking Total Coking Downstream Charge Capacity (B/SD) Thermal Cracking Delayed Coking Downstream Charge Capacity (B/SD Thermal Cracking Fluid Coking Downstream Charge Capacity (B/SD) Thermal Cracking Visbreaking Downstream Charge Capacity (B/SD) Thermal Cracking Other/Gas Oil Charge Capacity (B/SD) Catalytic Cracking Fresh Feed Charge Capacity (B/SD) Catalytic Cracking Recycle Charge Capacity (B/SD) Catalytic Hydro-Cracking Charge Capacity (B/SD) Catalytic Hydro-Cracking Distillate Charge Capacity (B/SD) Catalytic Hydro-Cracking Gas Oil Charge Capacity (B/SD) Catalytic Hydro-Cracking Residual Charge Capacity (B/SD) Catalytic Reforming Charge Capacity (B/SD) Catalytic Reforming Low Pressure Charge Capacity (B/SD) Catalytic Reforming High Pressure Charge Capacity (B/SD) Catalytic Hydrotreating/Desulfurization Charge Capacity (B/SD) Catalytic Hydrotreating Naphtha/Reformer Feed Charge Cap (B/SD) Catalytic Hydrotreating Gasoline Charge Capacity (B/SD) Catalytic Hydrotreating Heavy Gas Oil Charge Capacity (B/SD) Catalytic Hydrotreating Distillate Charge Capacity (B/SD) Catalytic Hydrotreating Kerosene/Jet Fuel Charge Capacity (B/SD) Catalytic Hydrotreating Diesel Fuel Charge Capacity (B/SD) Catalytic Hydrotreating Other Distillate Charge Capacity (B/SD) Catalytic Hydrotreating Residual/Other Charge Capacity (B/SD) Catalytic Hydrotreating Residual Charge Capacity (B/SD) Catalytic Hydrotreating Other Oils Charge Capacity (B/SD) Fuels Solvent Deasphalting Charge Capacity (B/SD) Catalytic Reforming Downstream Charge Capacity (B/CD) Total Coking Downstream Charge Capacity (B/CD) Catalytic Cracking Fresh Feed Downstream Charge Capacity (B/CD) Catalytic Hydro-Cracking Downstream Charge Capacity (B/CD) Period:

222

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

223

High rate (?3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (plasma and substrate biasing  

Science Journals Connector (OSTI)

The deposition of amorphous silicon nitride (a-SiNx:H) films at high deposition rates (?3 nm/s) and at low substrate temperatures (plasma technique operated on an Ar–NH3–SiH4 reactant mixture. To increase the atomic density of the films by ion bombardment, low frequency (lf, 400 kHz) and radio-frequency (rf, 13.6 MHz) substrate biasing has been employed during deposition such that the ions are accelerated towards the substrate up to energies of ?250 eV. From spectroscopic ellipsometry and Rutherford backscattering measurements, it is demonstrated that the film density increases with increasing substrate bias even under these high deposition rate conditions. An increase in film atomic density from 7.6×1022 cm?3 to 8.8×1022 cm?3 has been observed for rf biasing when going from almost zero substrate bias to a bias voltage of ?250 V. It is shown that this increased film density reduces the oxygen content in the a-SiNx:H caused by post-deposition oxygen and/or moisture permeation by more than 50%.

F.J.H. van Assche; W.M.M. Kessels; R. Vangheluwe; W.S. Mischke; M. Evers; M.C.M. van de Sanden

2005-01-01T23:59:59.000Z

224

A HighGranularity Scintillator Calorimeter Read Out with Silicon Photomultipliers  

E-Print Network (OSTI)

energy of photons and measured hadronic energy of neutral hadrons. Thus, high granu­ larity is necessary Abstract We report upon the design, construction and performance of a prototype for a high­granularity tile. Detector calibration, noise, linearity and stability are discussed, and the energy response in a 1­6 Ge

225

Correlation of injury occurrence data with estimated maximal aerobic capacity and body composition in a high frequency manual materials handling task  

E-Print Network (OSTI)

as follows (Nieman, 1986): 1. Low - V 0, ?( 36 ml/min/kg. 2. Medium ? VO, & 36 ml/min/kg and ( 46 ml/min/kg. 3. High - VO, & 46 ml/min/kg. The descriptive statistics of the 222 data points (9 missing data points) for the relative aerobic capacity... shows the trend of decreased injury occurrences with respect to higher step test estimated relative VO, ?(measured in ml/min/kg). The relative VO, appears to have a highly significant correlation to injury occurrence (p=0. 002). More specifically...

Craig, Brian Nichols

2012-06-07T23:59:59.000Z

226

Fundamental Studies of Advanced High-Capacity, Reversible Metal Hydrides - DOE Hydrogen and Fuel Cells Program FY 2012 Annual Progress Report  

NLE Websites -- All DOE Office Websites (Extended Search)

DOE Hydrogen and Fuel Cells Program FY 2012 Annual Progress Report Craig M. Jensen (Primary Contact) and Marina Chong University of Hawaii Department of Chemistry Honolulu, HI 96822 Phone: (808) 956-2769 Email: jensen@hawaii.edu DOE Managers HQ: Ned Stetson Phone: (202) 586-9995 Email: Ned.Stetson@ee.doe.gov GO: Katie Randolph Phone: (720) 356-1759 Email: Katie.Randolph@go.doe.gov Contract Number: DE-FC36-05GO15063 Project Start Date: April 1, 2005 Project End Date: September 30, 2012 Fiscal Year (FY) 2012 Objectives The objective of this project is to develop a new class of reversible materials that have the potential to meet the DOE kinetic and system gravimetric storage capacity targets. During the past year, our investigations have focused on the study of novel, high hydrogen capacity, borohydrides that can

227

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics  

E-Print Network (OSTI)

In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

Chung, Jinwook W. (Jinwook Will)

2011-01-01T23:59:59.000Z

228

Research on stable, high-efficiency amorphous silicon multijunction modules. Semiannual subcontract report, 1 January 1990--30 June 1991  

SciTech Connect

This report describes research to improve the understanding of amorphous silicon alloys and other relevant non-semiconductor materials for use in high-efficiency, large-area multijunction modules. The research produced an average subcell initial efficiency of 8.8% over a 1-ft{sup 2} area using same-band-gap, dual-junction cells deposited over a ZnO/AlSi back reflector. An initial efficiency of 9.6% was achieved using a ZnO/Ag back reflector over smaller substrates. A sputtering machine will be built to deposit a ZnO/Ag back reflector over a 1-ft{sup 2} area so that a higher efficiency can also be obtained on larger substrates. Calculations have been performed to optimize the grid pattern, bus bars, and cell interconnects on modules. With our present state of technology, we expect a difference of about 6% between the aperture-area and active-area efficiencies of modules. Preliminary experiments show a difference of about 8%. We can now predict the performance of single-junction cells after long-term light exposure at 50{degree}C by exposing cells to short-term intense light at different temperatures. We find that single-junction cells deposited on a ZnO/Ag back reflector show the highest stabilized efficiency when the thickness of the intrinsic layers is about 2000 {angstrom}. 8 refs.

Guha, S. [United Solar Systems Corp., Troy, MI (United States)

1991-12-01T23:59:59.000Z

229

Research on stable, high-efficiency amorphous silicon multijunction modules. Annual subcontract report, 1 January 1991--31 December 1991  

SciTech Connect

This report describes the progress made during Phase 1 of research and development program to obtain high-efficiency amorphous silicon alloy multijunction modules. Using a large-area deposition system, double-and triple-junction cells were made on stainless steel substrates of over 1 ft{sup 2} area with Ag and ZnO predeposited back reflector. Modules of over 1 ft{sup 2} were produced with between 9.2% and 9.9 initial aperture-area efficiencies as measured under a USSC Spire solar simulator. Efficiencies as measured under the NREL Spire solar simulator were found to be typically 15% to 18% lower. The causes for this discrepancy are now being investigated. The modules show about 15% degradation after 600 hours of one-sun illumination at 50{degrees}C. To optimize devices for higher stabilized efficiency, a new method was developed by which the performance of single-junction cells after long-term, one-sun exposure at 50{degrees}C can be predicted by exposing cells to short-term intense light at different temperatures. This method is being used to optimize the component cells of the multijunction structure to obtain the highest light-degraded efficiency.

Banerjee, A.; Chen, E.; Clough, R.; Glatfelter, T.; Guha, S.; Hammond, G.; Hopson, M.; Jackett, N.; Lycette, M.; Noch, J.; Palmer, T.; Pawlikiewicz, A.; Rosenstein, I.; Ross, R.; Wolf, D.; Xu, X.; Yang, J.; Younan, K.

1992-04-01T23:59:59.000Z

230

High-heat-load synchrotron tests of room-temperature, silicon crystal monochromators at the CHESS F-2 wiggler station  

SciTech Connect

This note summarizes the results of the single crystal monochromator high-heat-load tests performed at the CHESS F-2 wiggler station. The results from two different cooling geometries are presented: (1) the ``pin-post`` crystal and (2) the ``criss-cross`` crystal. The data presented were taken in August 1993 (water-cooled pin-post) and in April 1995 (water- and gallium-cooled pin-post crystal and gallium-cooled criss-cross crystal). The motivation for trying these cooling (or heat exchanger) geometries is to improve the heat transfer efficiency over that of the conventional slotted crystals. Calculations suggest that the pin-post or the microchannel design can significantly improve the thermal performance of the crystal. The pin-post crystal used here was fabricated by Rocketdyne Albuquerque Operations. From the performance of the conventional slotted crystals, it was thought that increased turbulence in the flow pattern may also enhance the heat transfer. The criss-cross crystal was a simple attempt to achieve the increased flow turbulence. The criss-cross crystal was partly fabricated in-house (cutting, etching and polishing) and bonded by RAO. Finally, a performance comparison among all the different room temperature silicon monochromators that have been tested by the APS is presented. The data includes measurements with the slotted crystal and the core-drilled crystals. Altogether, the data presented here were taken at the CHESS F-2 wiggler station between 1991 and 1995.

Lee, W.K.; Fernandez, P.B.; Graber, T.; Assoufid, L.

1995-09-08T23:59:59.000Z

231

Capacity Markets for Electricity  

E-Print Network (OSTI)

ternative Approaches for Power Capacity Markets”, Papers andprof id=pjoskow. Capacity Markets for Electricity [13]Utility Commission- Capacity Market Questions”, available at

Creti, Anna; Fabra, Natalia

2004-01-01T23:59:59.000Z

232

High-rate deposition of hydrogenated amorphous silicon films and devices  

SciTech Connect

In high-rate deposition of a-Si:H films, the effect of deposition parameters on material properties are examined when silane and disilane are the feed gases. The emphasis is on RF glow discharge, but other deposition methods are also covered. The problems of gas-phase polymerization and power formation at high rates have been overcome by modified reactor designs. Deposition rates of 1-3 nm/s are adequate for economically fabricating the intrinsic layer. Laboratory-size a-Si:H cells with greater than 10% efficiency have been achieved with both silane and disilane at rates in the 1- to 2-nm/s range.

Luft, W.

1988-12-01T23:59:59.000Z

233

A HighGranularity Scintillator Calorimeter Read Out with Silicon Photomultipliers  

E-Print Network (OSTI)

energy of photons and measured hadronic energy of neutral hadrons. Thus, high granu­ larity is necessary October 2004 DESY 04­143 LC­DET­2004­027 Abstract We report upon the design, construction and performance, and the energy response in a 1­6 GeV positron beam is compared with simulations. Preprint submitted to Elsevier

234

HIGH CHARGE EFFECTS IN SILICON DRIFT DETECTORS WITH LATERAL CONFINEMENT OF ELECTRONS.  

SciTech Connect

A new drift detector prototype which provides suppression of the lateral diffusion of electrons has been tested as a function of the signal charge up to high charge levels, when electrostatic repulsion is not negligible. The lateral diffusion of the electron cloud has been measured for injected charges up to 2 {center_dot} 10{sup 5} electrons. The maximum number of electrons for which the suppression of the lateral spread is effective is obtained.

CASTOLDI,A.; REHAK,P.

1995-10-21T23:59:59.000Z

235

Energy savings in one-pipe steam heating systems fitted with high-capacity air vents. Final report  

SciTech Connect

Multifamily buildings heated by one-pipe steam systems experience significant temperature gradients from apartment to apartment, often reaching 15{degrees}F. As a result, many tenants are to cold, or if the heating system output is increased so as to heat the coldest apartment adequately, too hot. While both are undesirable, the second is particularly so because it wastes energy. It was thought that insufficient air venting of the steam pipes contributed to the gradient. Theoretically, if steam mains and risers are quickly vented, steam will reach each radiator at approximately the same time and balance apartment temperatures. The project`s objective was to determine if the installation of large-capacity air vents at the ends of steam mains and risers would economically reduce the temperature gradient between apartments and reduce the amount of space heating energy required. The test was conducted by enabling and disabling air vents biweekly in 10 multifamily buildings in New York City between December 1992 to May 1993. The temperatures of selected apartments and total space heating energy were compared during each venting regime. There was no difference in energy consumption between ``vents on`` and ``vents off`` periods (see Tables 2 and 5); however, there was a reduction in the maximum spread of apartment temperatures.

Not Available

1994-09-01T23:59:59.000Z

236

Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon  

SciTech Connect

The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the {micro}c-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped {micro}c-Si, grains up to 1.3 {micro}m in diameter are detected, giving rise to conductivities of {approx}2,000 S/cm and hole mobilities of {approx}10 cm{sup 2}/Vs.

Nebel, C.E.; Dahlheimer, B.; Karrer, U.; Stutzmann, M.

1997-07-01T23:59:59.000Z

237

Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields  

E-Print Network (OSTI)

The performance of a Si PIN diode (type Hamamatsu S3590-06) as an energy sen- sitive detector operating at cryogenic temperatures (~10 K) and in magnetic fields up to 11 T was investigated, using a 207Bi conversion electron source. It was found that the detector still performs well under these conditions, with small changes in the response function being observed in high magnetic fields, e.g. a 30% to 50% decrease in energy resolution. A GEANT4 Monte Carlo simulation showed that the observed effects are mainly due to the modified trajectories of the electrons due to the influence of the magnetic field, which changes the scattering conditions, rather than to intrinsic changes of the performance of the detector itself.

F. Wauters; I. S. Kraev; M. Tandecki; E. Traykov; S. Van Gorp; D. Zakoucky; N. Severijns

2008-12-31T23:59:59.000Z

238

Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength  

DOE Patents (OSTI)

A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength. The powder mixture includes 9a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon mitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12m.sup.2 g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified articel an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder.

Huckabee, Marvin L. (Marlboro, MA); Buljan, Sergej-Tomislav (Acton, MA); Neil, Jeffrey T. (Acton, MA)

1991-01-01T23:59:59.000Z

239

Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength  

DOE Patents (OSTI)

A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

1991-09-17T23:59:59.000Z

240

Silicon Cells | Open Energy Information  

Open Energy Info (EERE)

Cells Cells Jump to: navigation, search Name Silicon Cells Place United Kingdom Product Technology developer based upon a low cost method of processing silicon to produce a new generation of high energy density batteries. References Silicon Cells[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Silicon Cells is a company located in United Kingdom . References ↑ "Silicon Cells" Retrieved from "http://en.openei.org/w/index.php?title=Silicon_Cells&oldid=351081" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties About us Disclaimers Energy blogs

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

High efficiency, low cost, thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

2001-01-01T23:59:59.000Z

242

High critical currents in Y-Ba-Cu-O films on silicon using YSZ buffer layers  

SciTech Connect

Exceptionally high quality films of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) were successfully grown epitaxially on Si(100) wafers with a buffer layer of yttria-stabilized zirconia (YSZ) using a fully in-situ pulsed laser deposition (PLD) process. Critical current densities of a 30-nm thick film are 2 {times} 10{sup 7} at 4.2 K and 2.2 {times} 10{sup 6} at 77 K. Zero- resistance critical temperatures are about 87 K, the transition width is 1 K, and normal-state resistivity is 0.28 mOhm-cm at 300 K. In this paper the authors describe the crystallographic and chemical structure of the interfaces and their role in film formation. The crystal quality of YSZ buffer layers on Si is not degraded by decomposition reactions, as is YBCO directly on Si or SiO{sub 2}, and cube- on-cube orientation of the YSZ cubic fluorite on Si(100) surfaces can be made to occur very effectively.

Fenner, D.B.; Fork, D.K.; Connell, G.A.N.; Boyce, J.B.; Viano, A.M. (Xerox Palo Alto Research Center, CA (United States)); Geballe, T.H. (Stanford Univ., CA (United States). Dept. of Applied Physics)

1991-03-01T23:59:59.000Z

243

Use of surface Brillouin scattering to examine a structural phase transition in carbon-ion-bombarded silicon during high-temperature annealing  

Science Journals Connector (OSTI)

Surface Brillouin scattering (SBS) has been used to monitor a structural transition during high-temperature annealing of silicon previously bombarded at ambient temperature with 100 keV carbon ions with a fluence of 5×1017 ions/cm2. It was observed that a significant change of the Rayleigh surface wave peak frequency occurred during annealing at 600 °C; thereafter the frequency remained essentially constant to 900 °C. Raman and SBS measurements of the sample after annealing and recooling to ambient temperature show that the significant change in the Rayleigh mode frequency results from recrystallization of the amorphous silicon layer near the sample surface produced by the ion bombardment. The work demonstrates the potential of SBS to study in situ the structural phase transitions of opaque materials.

X. Zhang; J. D. Comins; A. G. Every; T. E. Derry

2001-12-04T23:59:59.000Z

244

Vehicle Technologies Office Merit Review 2014: Studies on High Capacity Cathodes for Advanced Lithium-ion Systems  

Energy.gov (U.S. Department of Energy (DOE))

Presentation given by Oak Ridge National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about studies on high...

245

FAQs about Storage Capacity  

Gasoline and Diesel Fuel Update (EIA)

about Storage Capacity about Storage Capacity How do I determine if my tanks are in operation or idle or non-reportable? Refer to the following flowchart. Should idle capacity be included with working capacity? No, only report working capacity of tanks and caverns in operation, but not for idle tanks and caverns. Should working capacity match net available shell in operation/total net available shell capacity? Working capacity should be less than net available shell capacity because working capacity excludes contingency space and tank bottoms. What is the difference between net available shell capacity in operation and total net available shell capacity? Net available shell capacity in operation excludes capacity of idle tanks and caverns. What do you mean by transshipment tanks?

246

System and method for liquid silicon containment  

DOE Patents (OSTI)

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28T23:59:59.000Z

247

System and method for liquid silicon containment  

SciTech Connect

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03T23:59:59.000Z

248

D0 silicon trackers  

SciTech Connect

The present Fermilab D0 silicon microstrip tracker, the silicon microstrip tracker which was designed to replace it, and plans for upgrading the present silicon tracker are described.

W. E. Cooper

2003-12-19T23:59:59.000Z

249

Floating Silicon Method  

SciTech Connect

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Kellerman, Peter

2013-12-21T23:59:59.000Z

250

High-Mobility Thin-Film Transistor Fabricated Using Hydrogenated Amorphous Silicon Deposited by Discharge of Disilane  

Science Journals Connector (OSTI)

Plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) film was investigated with emphasis on the effect of disilane flow rate. A coplanar thin-film transistor (TFT) was fabricated using this a-Si:H film. Silicon-hydrogen bond content in the a-Si:H film was measured by infrared absorption spectroscopy. With decrease in the disilane flow rate from 3.0 cm3/min to 1.5 cm3/min, the maximum field-effect electron mobility (µ FE) of the TFT which depends on the gate voltage increased from 3.3 cm2/( Vs) to 4.9 cm2/( Vs), accompanied by a reduction in the silicon-hydrogen bond content. There was a negative correlation between µ FE and the silicon-hydrogen bond content in the a-Si:H film. The improvement mechanism of µ FE was discussed in terms of the chemical structure of the a-Si:H film.

Shigeichi Yamamoto; Junji Nakamura; Masatoshi Migitaka

1996-01-01T23:59:59.000Z

251

Amorphous Silicon  

Energy.gov (U.S. Department of Energy (DOE))

DOE has a proven track record of funding successes in amorphous silicon (a-Si)research. A list of current projects, summary of the benefits, and discussion on the production and manufacturing of...

252

Nanocrystalline {001} TiO2/carbon aerogel electrode with high surface area and enhanced photoelectrocatalytic oxidation capacity  

Science Journals Connector (OSTI)

Abstract Aiming at further developing the application of the highly reactive {001} TiO2 in photoelectrocatalytic oxidation, which is limited by the powder form, micron-size and low surface area, a nanocrystalline {001} TiO2/carbon aerogel (CA) photoelectrode was fabricated via a facile hydrothermal method. Nano-sized (50 nm) anatase {001} TiO2 was successfully grown on a CA substrate. The obtained photoelectrode endowed high surface area (537 m2 g?1) and enhanced photoelectrocatalytic oxidation performance. Under UV light illumination, the largest photocurrent density is obtained on 50 nm {001} TiO2 (5.58 mA cm?2), compared to 150 nm (4.17 mA cm?2), 1 ?m (2.83 mA cm?2) {001} TiO2, indicating that an obvious enhancement in photoelectrocatalytic oxidation activity was achieved when crystalline size reached nanometer scale. A high methylene blue removal of 93% was obtained on 50 nm {001} TiO2/CA, and the rate constant reached 8.46 × 10?3 min?1, which was twice as that of P25/CA and around twenty times that of 50 nm{001} TiO2/FTO.

Ya-nan Zhang; Yefei Jin; Xiaofeng Huang; Huijie Shi; Guohua Zhao; Hongying Zhao

2014-01-01T23:59:59.000Z

253

Monitoring Infrastructure Capacity Monitoring Infrastructure Capacity  

E-Print Network (OSTI)

Levinson, D. (2000) Monitoring Infrastructure Capacity p. 165-181 in Land Market Monitoring for Smart Urban) task. Monitoring infrastructure capacity is at least as complex as monitoring urban land markets Levinson, D. (2000) Monitoring Infrastructure Capacity p. 165-181 in Land Market Monitoring for Smart Urban

Levinson, David M.

254

First-principles Approaches to Simulate Lithiation in Silicon Electrodes  

E-Print Network (OSTI)

Silicon is viewed as an excellent electrode material for lithium batteries due to its high lithium storage capacity. Various Si nano-structures, such as Si nanowires, have performed well as lithium battery anodes and have opened up exciting opportunities for the use of Si in energy storage devices. The mechanism of lithium insertion and the interaction between Li and the Si electrode must be understood at the atomic level; this understanding can be achieved by first-principles simulation. Here, first-principles computations of lithiation in silicon electrodes are reviewed. The review focuses on three aspects: the various properties of bulk Li-Si compounds with different Li concentrations, the electronic structure of Si nanowires and Li insertion behavior in Si nanowires, and the dynamic lithiation process at the Li/Si interface. Potential study directions in this research field and difficulties that the field still faces are discussed at the end.

Zhang, Qianfan; Wang, Enge

2013-01-01T23:59:59.000Z

255

Manganese and Ceria Sorbents for High Temperature Sulfur Removal from Biomass-Derived Syngas -- The Impact of Steam on Capacity and Sorption Mode  

SciTech Connect

Syngas derived from biomass and coal gasification for fuel synthesis or electricity generation contains sulfur species that are detrimental to downstream catalysts or turbine operation. Sulfur removal in high temperature, high steam conditions has been known to be challenging, but experimental reports on methods to tackle the problem are not often reported. We have developed sorbents that can remove hydrogen sulfide from syngas at high temperature (700 C), both in dry and high steam conditions. The syngas composition chosen for our experiments is derived from statistical analysis of the gasification products of wood under a large variety of conditions. The two sorbents, Cu-ceria and manganese-based, were tested in a variety of conditions. In syngas containing steam, the capacity of the sorbents is much lower, and the impact of the sorbent in lowering H{sub 2}S levels is only evident in low space velocities. Spectroscopic characterization and thermodynamic consideration of the experimental results suggest that in syngas containing 45% steam, the removal of H{sub 2}S is primarily via surface chemisorptions. For the Cu-ceria sorbent, analysis of the amount of H{sub 2}S retained by the sorbent in dry syngas suggests both copper and ceria play a role in H{sub 2}S removal. For the manganese-based sorbent, in dry conditions, there is a solid state transformation of the sorbent, primarily into the sulfide form.

Cheah, S.; Parent, Y. O.; Jablonski, W. S.; Vinzant, T.; Olstad, J. L.

2012-07-01T23:59:59.000Z

256

Enhanced high-field current carrying capacities and pinning behavior of NbTi-based superconducting alloys  

SciTech Connect

High-field critical current densities J/sub c/ and pinning behavior are discussed for Nb-63a/oTi, Nb-61.7a/oTi-3a/oHf, and Nb-64.7a/oTi-7.2a/oTa superconducting alloys. J/sub c/ properties for 8--12 T in these alloy superconductors under superfluid helium environments can be even superior to those in Nb/sub 3/Sn at 4.2 K, when they are heavily cold-worked after final heat treatments. A temperature scaling law of the flux pinning force F/sub p/ is found to hold for these alloys in the form of F/sub P/ = K (B/sub c/2(T))/sup n/b/sup p/(1-b)/sup q/, where B/sub c/2 is the upper critical field and bequivalentB/B/sub c/2. The peak reduced field, b/sub m/, in the F/sub p/-b curve depends upon how the alloys have been processed. The origins of n, p, and q are discussed in terms of the processing condition.

Wada, H.; Itoh, K.; Tachikawa, K.; Yamada, Y.; Murase, S.

1985-05-01T23:59:59.000Z

257

Graphene/silicon nanocomposite anode with enhanced electrochemical stability for lithium-ion battery applications  

Science Journals Connector (OSTI)

Abstract A graphene/silicon nanocomposite has been synthesized, characterized and tested as anode active material for lithium-ion batteries. A morphologically stable composite has been obtained by dispersing silicon nanoparticles in graphene oxide, previously functionalized with low-molecular weight polyacrylic acid, in eco-friendly, low-cost solvent such as ethylene glycol. The use of functionalized graphene oxide as substrate for the dispersion avoids the aggregation of silicon particles during the synthesis and decreases the detrimental effect of graphene layers re-stacking. Microwave irradiation of the suspension, inducing reduction of graphene oxide, and the following thermal annealing of the solid powder obtained by filtration, yield a graphene/silicon composite material with optimized morphology and properties. Composite anodes, prepared with high-molecular weight polyacrylic acid as green binder, exhibited high and stable reversible capacity values, of the order of 1000 mAh g?1, when cycled using vinylene carbonate as electrolyte additive. After 100 cycles at a current of 500 mA g?1, the anode showed a discharge capacity retention of about 80%. The mechanism of reversible lithium uptake is described in terms of Li–Si alloying/dealloying reaction. Comparison of the impedance responses of cells tested in electrolytes with or without vinylene carbonate confirms the beneficial effects of the additive in stabilizing the composite anode.

F. Maroni; R. Raccichini; A. Birrozzi; G. Carbonari; R. Tossici; F. Croce; R. Marassi; F. Nobili

2014-01-01T23:59:59.000Z

258

Refinery Capacity Report  

Annual Energy Outlook 2012 (EIA)

Report --- Full report in PDF (1 MB) XLS --- Refinery Capacity Data by individual refinery as of January 1, 2006 Tables 1 Number and Capacity of Operable Petroleum...

259

Numerical simulations for high efficiency HIT solar cells using microcrystalline silicon as emitter and back surface field (BSF) layers  

Science Journals Connector (OSTI)

Abstract In present article the influence of thickness and band gap of microcrystalline silicon emitter layer, amorphous silicon front and back intrinsic layers and p-type crystalline silicon (c-Si) wafer thickness on the performance of TCO/?c-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/?c-Si:H(p+)/Ag Heterojunction with thin intrinsic layer (HIT) solar cell along with other structural possibilities were investigated through computer simulations using AFORS-HET software. These simulations revealed the importance of inclusion of intrinsic a-Si:H thin layer in improving the performance of solar cell with the help of interface passivation. Also microcrystalline BSF can raise the conversion efficiency more than 4% compared to HIT solar cell having no BSF layer. Highest stable efficiency of 24.12% for p-type substrate based HITBSF (HIT with back surface field) solar cells was observed. Furthermore the effect of textured transparent conductive oxide (TCO) on solar cells was investigated where the enhanced light trapping was observed with the use of textured TCO surface which raised the performance of solar cells. These optimizations may help in fabricating ?c-Si emitter and BSF based HIT solar cells with stable efficiencies compared to possibly degraded efficiencies as in case of a-Si:H based HIT solar cell structures studied so far.

Arti Rawat; Mansi Sharma; Deepika Chaudhary; S. Sudhakar; Sushil Kumar

2014-01-01T23:59:59.000Z

260

Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations  

SciTech Connect

Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 10–80??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

Bozzola, A., E-mail: angelo.bozzola@unipv.it; Kowalczewski, P.; Andreani, L. C. [Physics Department, University of Pavia and CNISM, via Bassi 6, I-27100 Pavia (Italy)

2014-03-07T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

New high-capacity, calcium-based sorbents, calcium silicate sorbents. Final report, 1993--August 31, 1994  

SciTech Connect

A search is being carried out for new calcium-based S0{sub 2} sorbents for induct injection. More specifically, a search is being carried out for induct injection calcium silicate sorbents that are highly cost effective. The objectives for the current year include the study of sorbents made from Ca(OH){sub 2}, from mixtures of Ca(OH){sub 2} and SiO{sub 2}, and from portland cement. They also include the study of sorbents made from model compounds. During this year, sorbents prepared from Ca(OH){sub 2} and from mixtures of Ca(OH){sub 2} and fumed SiO{sub 2} were investigated. The results show that very good SiO{sub 2}-modified Ca(OH){sub 2} sorbents in which the Si-to-Ca reactant ratio is low can be prepared from Ca(OH){sub 2} and fumed SiO{sub 2}. Sorbents prepared from Ca(OH){sub 2} and natural SiO{sub 2} or natural SiO{sub 2} sources were also studied. The results obtained show that very good SiO{sub 2}-modified Ca(OH){sub 2} sorbents and calcium silicate hydrate sorbents, C-S-H sorbents, can be prepared from Ca(OH){sub 2} and diatomite, pumice or perlite, minerals that are readily available. In addition. sorbents prepared from Ca{sub 3}SiO{sub 5} and {beta}-Ca{sub 2}SiO{sub 4} and from mixtures of these compounds and SiO{sub 2} were studied. The results secured demonstrate that very good C-S-H rich sorbents can be prepared from these compounds and from mixtures of them with SiO{sub 2}. They also provide information useful for interpreting the cement sorbent results. Sorbents prepared from cement and from mixtures of cement and natural SiO{sub 2} or SiO{sub 2} sources were investigated as well. The results secured show that cement and mixtures of it with diatomite, pumice or perlite rapidly yield excellent sorbents with the proper reaction conditions.

Kenney, M.C.; Chiang, R.K.; Fillgrove, K.L. [Case Western Reserve Univ., Cleveland, OH (United States)

1995-02-01T23:59:59.000Z

262

Diamond-silicon carbide composite and method  

DOE Patents (OSTI)

Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

Zhao, Yusheng (Los Alamos, NM)

2011-06-14T23:59:59.000Z

263

Silicon Photonics for Modulation, Switching, and Tuning  

Science Journals Connector (OSTI)

Thermal and electro-refractive silicon photonic modulators, switches, and tunable filters have been demonstrated with ultralow switching energies and high-speed operation. These...

Watts, Michael

264

Structural alloy with a protective coating containing silicon or silicon-oxide  

DOE Patents (OSTI)

An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

Natesan, K.

1994-12-27T23:59:59.000Z

265

Structural alloy with a protective coating containing silicon or silicon-oxide  

DOE Patents (OSTI)

This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

Natesan, K.

1992-01-01T23:59:59.000Z

266

High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate  

E-Print Network (OSTI)

We present recent results on the direct heterogeneous integration of InP HBTs and Si CMOS on a silicon template wafer or SOLES (Silicon On Lattice Engineered Substrate). InP HBTs whose performance are comparable to HBTs ...

Kazior, T. E.

267

Process for forming silicon carbide films and microcomponents  

DOE Patents (OSTI)

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

1999-01-01T23:59:59.000Z

268

Process for forming silicon carbide films and microcomponents  

DOE Patents (OSTI)

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19T23:59:59.000Z

269

A high capacity microplate rack  

Science Journals Connector (OSTI)

A microplate rack has been designed for use with in vitro biological assays. The microplate rack can hold up to 15, 96-well ... gas diffusion) surrounding microplates arranged in the rack are more uniform than wh...

Glynn T. Faircloth; David Newman; Michael Young

1989-01-01T23:59:59.000Z

270

High Capacity Composite Carbon Anodes  

Energy.gov (U.S. Department of Energy (DOE))

2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

271

HIGH-CAPACITY POLYANION CATHODES  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

nanostructured phosphate and silicate cathodes as well as their nanocomposites with graphene to overcome the limitations of poor ionic and electronic conductivity - To develop a...

272

Solidification of polycrystalline silicon ingots : simulation and characterization of the microstructure  

E-Print Network (OSTI)

.90 1. Introduction. The most important development in silicon solar cells is due to the substitution solidification of poly- crystalline silicon (POLYX). The capacity of the initial furnace was about 1 kg and today the silicon in a graphite crucible using induction heating furnace. The crucible is well insulated to reduce

Paris-Sud XI, Université de

273

E-Print Network 3.0 - amorphous-silicon-based solar cell Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer Summary: light exposure as do the amorphous silicon-based...

274

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents (OSTI)

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

275

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells  

SciTech Connect

A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an in-situ passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n{sup +} and p{sup +} profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin ({approximately} 60 {angstrom}) diffusion glass, resulting in low J{sub o} values below 100 fA/cm{sup 2} for transparent ({approximately} 100 {Omega}/{open_square}) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step.

Krygowski, T.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States); Ruby, D. [Sandia National Labs., Albuquerque, NM (United States)

1997-11-01T23:59:59.000Z

276

Minimizing the Lead-Acid Battery Bank Capacity through a Solar PV - Wind Turbine Hybrid System for a high-altitude village in the Nepal Himalayas  

Science Journals Connector (OSTI)

Abstract Of the estimated 1.6-2 billion people who lacked access to electricity at the end of the last millennium, millions have gained access to basic indoor lighting through off grid solar PV home systems with lead acid battery storage over the last decade. In Nepal, through government subsidy programs and INGO/NGO projects, around 350,000 solar PV home systems have been installed since 2001, mainly in remote, high altitude Himalayan communities. The author's field experience shows that within 6-24 months, 50-70% of the solar PV home systems are either not properly functioning, or not working at all. This is mainly due to substandard equipment, lack of user awareness, inability to maintain their systems, as well as the nonexistence of after sales services. Thus, an estimated 250,000 “dead”, flooded lead-acid batteries are either unsafely disposed of or lying around, posing huge potential hazards for people and the unique yet fragile Himalayan ecosystem. The research conducted demonstrates that by tapping into more than one renewable energy resource, converting the local available solar and wind resources into electricity through a solar PV - wind turbine hybrid RAPS (Remote Area Power Supply) system, the lead-acid battery bank capacity can be minimized by 57%, compared to an equivalent energy generating solar PV RAPS system, without jeopardizing, or reducing the village's load demands. This project shows that wind and solar resources are complimentary to each other over several hours in an average day. Thus, by utilizing both of the local wind and solar resources and converting them into electricity to meet the loads directly or to store into the lead-acid battery bank, it allows an average of 3-4 hours longer electricity generation per day. This enables the design of smaller battery bank capacities for hybrid RAPS systems without limiting the end users’ energy services. Hence, long-term health risks to the people, as well as environmental damage to the delicate and exceptional Himalayan flora and fauna through disposed “dead” lead-acid batteries, is reduced.

Zahnd Alex; Angel Clark; Wendy Cheung; Linda Zou; Jan Kleissl

2014-01-01T23:59:59.000Z

277

Research on stable, high-efficiency amorphous silicon multijunction modules. Semiannual subcontract report, 1 January 1992--30 June 1992  

SciTech Connect

This report describes research on semiconductor and non-semiconductor materials to enhance the performance of multi-band-gap, multijunction panel with an area greater than 900 cm{sup 2} by 1992. Double-junction and triple-junction cells are mode on a Ag/ZnO back reflector deposited on stainless steel substrates. An a-SiGe alloy is used for the i-layer in the bottom and the middle cells; the top cell uses an amorphous silicon alloy. After the evaporation of an antireflection coating, silver grids and bus bars are put on the top surface and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a 1-ft{sup 2} monolithic module.

Guha, S. [United Solar Systems Corp., Troy, MI (United States)

1992-09-01T23:59:59.000Z

278

Change in stacking-fault energy with Mn content and its influence on the damping capacity of the austenitic phase in Fe-high Mn alloys  

Science Journals Connector (OSTI)

The effect of Mn content on the damping capacity of ? austenitic ... been studied in relation to the stacking-fault energy ( SFE), on the basis of ... austenite decreases with the increase in the Mn content. The ...

Joong-Hwan Jun; Chong-Sool Choi

279

Electronic properties and reliability of the silicon dioxide / silicon carbide interface.  

E-Print Network (OSTI)

??Silicon carbide has been preferred over other wide band-gap semiconductors for high power applications because of its unique ability to grow a thermal oxide, challenges… (more)

Rozen, John

2008-01-01T23:59:59.000Z

280

Method for fabricating silicon cells  

DOE Patents (OSTI)

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

ORISE: Capacity Building  

NLE Websites -- All DOE Office Websites (Extended Search)

Capacity Building Capacity Building Because public health agencies must maintain the resources to respond to public health challenges, critical situations and emergencies, the Oak Ridge Institute for Science and Education (ORISE) helps government agencies and organizations develop a solid infrastructure through capacity building. Capacity building refers to activities that improve an organization's ability to achieve its mission or a person's ability do his or her job more effectively. For organizations, capacity building may relate to almost any aspect of its work-from leadership and administration to program development and implementation. Strengthening an organizational infrastructure can help agencies and community-based organizations more quickly identify targeted audiences for

282

Toward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers and Inorganic Nanocrystals in Close  

E-Print Network (OSTI)

to traditional silicon solar cells due to the capacity of producing high- efficiency solar energy in a cost these advantages and progress, organic-inorganic hybrid solar cells still exhibit much lower PCEs (iToward High-Performance Organic-Inorganic Hybrid Solar Cells: Bringing Conjugated Polymers

Lin, Zhiqun

283

Effect of Al/Si Substitutions and Silanol Nests on the Local Geometry of Si and Al Framework Sites in Silicone-Rich Zeolites: A Combined High Resolution 27  

E-Print Network (OSTI)

Effect of Al/Si Substitutions and Silanol Nests on the Local Geometry of Si and Al Framework Sites in Silicone-Rich Zeolites: A Combined High Resolution 27 Al and 29 Si NMR and Density Functional TheoryVed: May 6, 2009; ReVised Manuscript ReceiVed: June 8, 2009 We employed 29 Si and 27 Al (3Q) magic

Sklenak, Stepan

284

Purification and deposition of silicon by an iodide disproportionation reaction  

DOE Patents (OSTI)

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Wang, Tihu (Littleton, CO); Ciszek, Theodore F. (Evergreen, CO)

2002-01-01T23:59:59.000Z

285

Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors  

Science Journals Connector (OSTI)

Abstract Hydrogenated amorphous silicon (a-Si) and microcrystalline silicon (?c-Si) films were grown in atmospheric-pressure (AP) He/H2/SiH4 plasma excited by a 150-MHz very high-frequency (VHF) power at a temperature of 220 °C. The variations in thickness and crystallinity of the deposited Si films along the gas flow direction were studied as functions of gas residence time in the plasma, VHF power density and H2 flow rate. Furthermore, the electrical characteristics of bottom-gate thin film transistors (TFTs) were investigated to evaluate the film quality. The results revealed that the chemical reactions both in gas phase and on the growing film surface were significantly enhanced in AP-VHF plasma, promoting phase transition from amorphous to microcrystalline in a time of the order of 0.1 ms. The performance of the \\{TFTs\\} showed that a-Si layers formed in the upstream portion of the plasma zone had reasonably good electrical property (field-effect mobility of approximately 2 cm2/V s) despite very high deposition rates around 20 nm/s. While ?c-Si layers deposited in the downstream portion were very defective, which might come from the insufficient passivation of grain boundaries with a-Si tissues due to a too long gas residence time in the plasma. The precise control of gas residence time by adjusting the length of plasma will be effective for the phase control of Si films with desired quality.

H. Kakiuchi; H. Ohmi; T. Yamada; A. Hirano; T. Tsushima; W. Lin; K. Yasutake

2013-01-01T23:59:59.000Z

286

Surface alloying of silicon into aluminum substrate.  

SciTech Connect

Aluminum alloys that are easily castable tend to have lower silicon content and hence lower wear resistance. The use of laser surface alloying to improve the surface wear resistance of 319 and 320 aluminum alloys was examined. A silicon layer was painted onto the surface to be treated. A high power pulsed Nd:YAG laser with fiberoptic beam delivery was used to carry out the laser surface treatment to enhance the silicon content. Process parameters were varied to minimize the surface roughness from overlap of the laser beam treatment. The surface-alloyed layer was characterized and the silicon content was determined.

Xu, Z.

1998-10-28T23:59:59.000Z

287

Apparatus for obtaining silicon from fluosilicic acid  

DOE Patents (OSTI)

Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

Sanjurjo, Angel (San Jose, CA)

1986-05-20T23:59:59.000Z

288

Device integration for silicon microphotonic platforms  

E-Print Network (OSTI)

Silicon ULSI compatible, high index contrast waveguides and devices provide high density integration for optical networking and on-chip optical interconnects. Four such waveguide systems were fabricated and analyzed: ...

Lim, Desmond Rodney

2000-01-01T23:59:59.000Z

289

Hybrid Zero-capacity Channels  

E-Print Network (OSTI)

There are only two known kinds of zero-capacity channels. The first kind produces entangled states that have positive partial transpose, and the second one - states that are cloneable. We consider the family of 'hybrid' quantum channels, which lies in the intersection of the above classes of channels and investigate its properties. It gives rise to the first explicit examples of the channels, which create bound entangled states that have the property of being cloneable to the arbitrary finite number of parties. Hybrid channels provide the first example of highly cloneable binding entanglement channels, for which known superactivation protocols must fail - superactivation is the effect where two channels each with zero quantum capacity having positive capacity when used together. We give two methods to construct a hybrid channel from any binding entanglement channel. We also find the low-dimensional counterparts of hybrid states - bipartite qubit states which are extendible and possess two-way key.

Sergii Strelchuk; Jonathan Oppenheim

2012-07-04T23:59:59.000Z

290

EIA - Electricity Generating Capacity  

U.S. Energy Information Administration (EIA) Indexed Site

Electricity Generating Capacity Release Date: January 3, 2013 | Next Release: August 2013 Year Existing Units by Energy Source Unit Additions Unit Retirements 2011 XLS XLS XLS 2010...

291

Modified silicon carbide whiskers  

DOE Patents (OSTI)

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, T.N.; Lindemer, T.B.

1991-05-21T23:59:59.000Z

292

Modified silicon carbide whiskers  

DOE Patents (OSTI)

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

1991-01-01T23:59:59.000Z

293

Silicon/Organic Heterojunction to Block Minority Carriers  

E-Print Network (OSTI)

silicon solar cells are typically fabricated on thin high-quality silicon wafers ( (Fig. 4.1(a)). Conventional silicon solar cells use diffused p/p+ back-surface fields to reduce (c) Figure 4.1: (a) Band Diagram of solar cell in which recombination at the metal contact dominates

294

Physics based analytical modelling of silicon carbide (SiC) MESFET considering different ion implantation energy with high temperature annealing.  

E-Print Network (OSTI)

??A Physics based analytical model of ion implanted SiC MESFET has been developed considering the high temperature annealing effects. The diffusion of implanted impurities has… (more)

Yadavalli, Karthik Vishwanath

2015-01-01T23:59:59.000Z

295

Liquid heat capacity lasers  

DOE Patents (OSTI)

The heat capacity laser concept is extended to systems in which the heat capacity lasing media is a liquid. The laser active liquid is circulated from a reservoir (where the bulk of the media and hence waste heat resides) through a channel so configured for both optical pumping of the media for gain and for light amplification from the resulting gain.

Comaskey, Brian J. (Walnut Creek, CA); Scheibner, Karl F. (Tracy, CA); Ault, Earl R. (Livermore, CA)

2007-05-01T23:59:59.000Z

296

capacity | OpenEI  

Open Energy Info (EERE)

capacity capacity Dataset Summary Description This dataset comes from the Energy Information Administration (EIA), and is part of the 2011 Annual Energy Outlook Report (AEO2011). This dataset is table 9, and contains only the reference case. The dataset uses gigawatts. The data is broken down into power only, combined heat and power, cumulative planned additions, cumulative unplanned conditions, and cumulative retirements and total electric power sector capacity . Source EIA Date Released April 26th, 2011 (3 years ago) Date Updated Unknown Keywords 2011 AEO capacity consumption EIA Electricity generating Data application/vnd.ms-excel icon AEO2011: Electricity Generating Capacity- Reference Case (xls, 130.1 KiB) Quality Metrics Level of Review Peer Reviewed Comment

297

Nanofluid heat capacities  

Science Journals Connector (OSTI)

Significant increases in the heat capacity of heat transfer fluids are needed not only to reduce the costs of liquid heating and cooling processes but also to bring clean energy producing technologies like concentrating solar power (CSP) to price parity with conventional energy generation. It has been postulated that nanofluids could have higher heat capacities than conventional fluids. In this work nano- and micron-sized particles were added to five base fluids (poly-? olefin mineral oil ethylene glycol a mixture of water and ethylene glycol and calcium nitrate tetrahydrate) and the resulting heat capacities were measured and compared with those of the neat base fluids and the weighted average of the heat capacities of the components. The particles used were inert metals and metal oxides that did not undergo any phase transitions over the temperature range studied. In the nanofluids studied here we found no increase in heat capacity upon the addition of the particles larger than the experimental error.

Anne K. Starace; Judith C. Gomez; Jun Wang; Sulolit Pradhan; Greg C. Glatzmaier

2011-01-01T23:59:59.000Z

298

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures  

SciTech Connect

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570?K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

Goto, Masaki; Amano, Ryo; Shimoda, Naotaka [Graduate School of Automotive Science, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Kato, Yoshimine, E-mail: yoshimine.kato@zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Teii, Kungen [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2014-04-14T23:59:59.000Z

299

3822 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 51, NO. 6, DECEMBER 2004 High Total Dose Tolerance of Prototype Silicon  

E-Print Network (OSTI)

3822 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 51, NO. 6, DECEMBER 2004 High Total Dose Tolerance). Alternative technologies that are being developed for the general market are also under eval- uation

Atwater, Harry

300

Factors Limiting the Application of Silicon Nitride Ceramics in Sulphur-Containing Environments of Low Oxygen Potential at High Temperatures  

Science Journals Connector (OSTI)

In many high temperature applications (e.g. coal gasifiers, petrochemical plants), materials are in contact with gases containing low oxidant (O2/S2) potentials. Under these conditions, little is known about the ...

F.A. Costa Oliveira; R.A.H. Edwards; R.J. Fordham…

1994-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

In-Situ Transmission Electron Microscopy Probing of Native Oxide and Artificial Layers on Silicon Nanoparticles for Lithium Ion Batteries  

SciTech Connect

Surface modification of silicon nanoparticle via molecular layer deposition (MLD) has been recently proved to be an effective way for dramatically enhancing the cyclic performance in lithium ion batteries. However, the fundamental mechanism as how this thin layer of coating function is not known, which is even complicated by the inevitable presence of native oxide of several nanometers on the silicon nanoparticle. Using in-situ TEM, we probed in detail the structural and chemical evolution of both uncoated and coated silicon particles upon cyclic lithiation/delithation. We discovered that upon initial lithiation, the native oxide layer converts to crystalline Li2O islands, which essentially increases the impedance on the particle, resulting in ineffective lithiation/delithiation, and therefore low coulombic efficiency. In contrast, the alucone MLD coated particles show extremely fast, thorough and highly reversible lithiation behaviors, which are clarified to be associated with the mechanical flexibility and fast Li+/e- conductivity of the alucone coating. Surprisingly, the alucone MLD coating process chemically changes the silicon surface, essentially removing the native oxide layer and therefore mitigates side reaction and detrimental effects of the native oxide. This study provides a vivid picture of how the MLD coating works to enhance the coulombic efficiency and preserve capacity and clarifies the role of the native oxide on silicon nanoparticles during cyclic lithiation and delithiation. More broadly, this work also demonstrated that the effect of the subtle chemical modification of the surface during the coating process may be of equal importance as the coating layer itself.

He, Yang; Piper, Daniela M.; Gu, Meng; Travis, Jonathan J.; George, Steven M.; Lee, Se-Hee; Genc, Arda; Pullan, Lee; Liu, Jun; Mao, Scott X.; Zhang, Jiguang; Ban, Chunmei; Wang, Chong M.

2014-10-27T23:59:59.000Z

302

Room-temperature high radio-frequency source power effects on silicon nitride films deposited by using a plasma-enhanced chemical vapor deposition  

Science Journals Connector (OSTI)

Silicon nitride films were deposited at room temperature using a plasma-enhanced chemical vapor deposition system. In this study, the effects of radio frequency (RF) source power ranging from 200 W to ... charact...

Byungwhan Kim; Suyeon Kim

2008-10-01T23:59:59.000Z

303

Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin  

SciTech Connect

Silicon (Si) has a very high lithium storage capacity and is being explored as a negative electrode material in lithium-ion batteries (LIBs). Si nanowires can exhibit relatively stable performance for many cycles of charging; however, conductive carbon must often be added to the electrode layer to improve the rate capability due to the relatively low electrical conductivity of Si. The added carbon lowers the capacity of the electrode. Here, we show that the rate capability of Si in LIBs can be substantially enhanced by incorporating tin (Sn) into Si nanowires. The solubility of Sn in Si is very low (0.015 at%); yet, Sn used as a seed for supercritical fluid–liquid–solid (SFLS) growth can be trapped in Si nanowires with relatively high concentration (10 at%). Such Sn-containing Si nanowires and no added conductive carbon in the electrode layer, could be cycled in LIBs with high capacity (*1000 mA h g*1 over 100 cycles) at a current density of 2.8 A g*1 (1 C). Capacities exceeding that of graphite could still be reached at cycle rates as high as 2 C. Real-time in situ transmission electron microscopy (TEM) revealed that lithiation occurs five times faster in Si nanowires with significant amounts of Sn than in the Si nanowires without Sn, and twice as fast as in nanowires that were coated with carbon.

Bogart, Timothy D.; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

2014-10-30T23:59:59.000Z

304

Amorphous Zn?GeO? Nanoparticles as Anodes with High Reversible Capacity and Long Cycling Life for Li-ion Batteries  

SciTech Connect

Amorphous and crystalline Zn?GeO? nanoparticles were prepared and characterized as anode materials for Li-ion batteries. A higher reversible specific capacity of 1250 mAh/g after 500 cycles and excellent rate capability were obtained for amorphous Zn?GeO? nanoparticles, compared to that of crystalline Zn?GeO? nanoparticles. Small particle size, amorphous phase and incorporation of zinc and oxygen contribute synergetically to the improved performance by effectively mitigating the huge volume variations during lithiation and delithiation process.

Yi, Ran; Feng, Jinkui; Lv, Dongping; Gordin, Mikhail; Chen, Shuru; Choi, Daiwon; Wang, Donghai

2013-07-30T23:59:59.000Z

305

Electronic properties of microcrystalline silicon  

SciTech Connect

The electronic and optical properties of microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition are investigated with Hall-effect, electrical conductivity, photothermal deflection spectroscopy and photoluminescence measurements. In particular, the influence of the grain size and the crystalline volume fraction on the conductivity, the carrier density and the Hall mobility is investigated in highly doped films. A percolation model is proposed to describe the observed transport data. Photoluminescence properties were studied in undoped films. It is proposed that the photoluminescence is due to recombination at structural defects similar to those observed in crystalline silicon.

Carius, R.; Finger, F.; Backhausen, U.; Luysberg, M.; Hapke, P.; Houben, L.; Otte, M.; Overhof, H.

1997-07-01T23:59:59.000Z

306

WINDExchange: Wind Potential Capacity  

Wind Powering America (EERE)

area with a gross capacity factor1 of 35% and higher, which may be suitable for wind energy development. AWS Truepower LLC produced the wind resource data with a spatial...

307

LASER METALLIZATION AND DOPING FOR SILICON CARBIDE DIODE FABRICATION AND ENDOTAXY.  

E-Print Network (OSTI)

??Silicon carbide is a promising semiconductor material for high voltage, high frequency and high temperature devices due to its wide bandgap, high breakdown electric field… (more)

Tian, Zhaoxu

2006-01-01T23:59:59.000Z

308

Panama Canal capacity analysis  

SciTech Connect

Predicting the transit capacities of the various Panama Canal alternatives required analyzing data on present Canal operations, adapting and extending an existing computer simulation model, performing simulation runs for each of the alternatives, and using the simulation model outputs to develop capacity estimates. These activities are summarized in this paper. A more complete account may be found in the project final report (TAMS 1993). Some of the material in this paper also appeared in a previously published paper (Rosselli, Bronzini, and Weekly 1994).

Bronzini, M.S. [Oak Ridge National Lab., Knoxville, TN (United States). Center for Transportation Analysis

1995-04-27T23:59:59.000Z

309

wind power capacity | OpenEI  

Open Energy Info (EERE)

capacity capacity Dataset Summary Description These estimates are derived from a composite of high resolution wind resource datasets modeled for specific countries with low resolution data originating from the National Centers for Environmental Prediction (United States) and the National Center for Atmospheric Research (United States) as processed for use in the IMAGE model. The high resolution datasets were produced by the National Renewable Energy Laboratory (United States), Risø DTU National Laboratory (Denmark), the National Institute for Space Research (Brazil), and the Canadian Wind Energy Association. The data repr Source National Renewable Energy Laboratory Date Released Unknown Date Updated Unknown Keywords area capacity clean energy international

310

First-Principles Study of Novel Conversion Reactions for High-Capacity Li-Ion Battery Anodes in the Li-Mg-B-N-H System  

SciTech Connect

Anodes for Li-ion batteries are primarily carbon-based due to their low cost and long cycle life. However, improvements to the Li capacity of carbon anodes, LiC{sub 6} in particular, are necessary to obtain a larger energy density. State-of-the-art light-metal hydrides for hydrogen storage applications often contain Li and involve reactions requiring Li transport, and light-metal ionic hydrides are candidates for novel conversion materials. Given a set of known solid-state and gas-phase reactants, we have determined the phase diagram in the Li-Mg-B-N-H system in the grand canonical ensemble, as a function of lithium chemical potential. We present computational results for several new conversion reactions with capacities between 2400 and 4000 mAh g{sup -1} that are thermodynamically favorable and that do not involve gas evolution. We provide experimental evidence for the reaction pathway on delithiation for the compound Li{sub 4}BN{sub 3}H{sub 10}. While the predicted reactions involve multiple steps, the maximum volume increase for these materials on lithium insertion is significantly smaller than that for Si.

Mason, T.H.; Graetz, J.; Liu, X.; Hong, J.; Majzoub, E.H.

2011-07-28T23:59:59.000Z

311

Crystalline Silicon Photovoltaics Research | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

87% of world PV cell market sales in 2011. Crystalline silicon PV cells have laboratory energy conversion efficiencies as high as 25% for single-crystal cells and 20.4% for...

312

Silicon Photonic Wire Waveguides: Fundamentals and Applications  

Science Journals Connector (OSTI)

This chapter reviews the fundamental characteristics and basic applications of the silicon ... provides us with a highly integrated platform for electronic–photonic convergence. For the practical achievement of ....

Koji Yamada

2011-01-01T23:59:59.000Z

313

Laser wafering for silicon solar.  

SciTech Connect

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

314

Ultralow-Power Silicon Microphotonic Communications Platform  

NLE Websites -- All DOE Office Websites (Extended Search)

Ultralow-Power Silicon Ultralow-Power Silicon Microphotonic Communications Platform 1 R&D 100 Entry Ultralow-Power Silicon Microphotonic Communications Platform 2 R&D 100 Entry Submitting Organization Sandia National Laboratories P. O. Box 5800 Albuquerque New Mexico 87185-1082 USA Michael R. Watts Phone: (505) 284-9616 Fax: (505) 284-7690 mwatts@sandia.gov AFFIRMATION: I affirm that all information submitted as a part of, or supplemental to, this entry is a fair and accurate representation of this product. _____________________________ Michael R. Watts Joint Entry Not applicable Product Name Ultralow-Power Silicon Microphotonic Communications Platform Brief Description We have developed an ultralow-power, high-bandwidth silicon microphotonic communications platform that addresses the bandwidth and power consumption

315

Advanced silicon photonic modulators  

E-Print Network (OSTI)

Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

Sorace, Cheryl M

2010-01-01T23:59:59.000Z

316

BY SILICON CRYSTALS  

NLE Websites -- All DOE Office Websites (Extended Search)

c October 29, 1942 a 1 1 _MIGH aECTgFXCATIOH - BY SILICON CRYSTALS . . c .. I n. The excellent pesformmce of Brftieh "red dot" c r y s t a l s f e explained R R due t o the kgife edge contact i n a t A polfehod ~ X ' f l i C B o H i g h frequency m c t l f f c n t f o n 8ependre c r i t i c a l l y on the ape%e;y of the rectifytnc boundary layer o f the crystal, C, For hl#$ comvere~on e f f i c i e n c y , the product c d t h i ~ capacity m a o f ' t h e @forward" (bulk) re-. sistance Rb o f the crystnl must b@ sm%P, depende primarily on the breadth of tha b f f e edge i t s lbngth. The contact am &harefore ~ E L V Q a rather large area wMQh prevents burn-out, thh3 t h e breadth of &h@ knife edge should be bdt8~1 than E~$O$B% % f I - ' amo For a knife edge, this produet very 14ttle upom For a wavsIL~n+3tih of PO emo the eowp,o%a%8sne 4

317

Silicon microrefrigerator  

E-Print Network (OSTI)

and J. E. Bowers, “High cooling power density SiGe/Si microShakouri, and J. Bowers, “Cooling power density of SiGe/Sidimensional high cooling power den- sity thermoelectric

Zhang, Y; Zeng, G H; Shakouri, A

2006-01-01T23:59:59.000Z

318

A Silicon Strip Detector for the Phase II High Luminosity Upgrade of the ATLAS Detector at the Large Hadron Collider  

E-Print Network (OSTI)

This thesis presents the work carried out in the testing of the ATLAS Phase-II Upgrade electronic systems in the future strips tracker after 2023, to be installed for operations in the HL-LHC period. The high luminosity and number of interactions per crossing that will happen after the HL-LHC starts require a complete replacement of the ATLAS tracker. The systems that have been defined for the Phase-II Upgrade will be designed to cope with that increased radiation and have the right granularity to maintain the performance with higher pile-up. In this thesis I present results on single modules and larger structures comprising multiple modules. In the context of the current ATLAS Semiconductor Tracker studies, I present an analysis of the data taken by the detector from the beginning of operation in 2010 until the first Long Shut-down in 2013. The analysis consists of an energy loss study in the Semiconductor Tracker, a task the detector was not designed to perform. However, the availability of the Time-over-Th...

García-Argos, Carlos

2015-01-01T23:59:59.000Z

319

Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma  

Science Journals Connector (OSTI)

We have investigated the structure and stability of SiN x ...films deposited with very high rates (>50 nm/s) in atmospheric-pressure (AP) He-based plasma excited by a 150 MHz ver...

Hiroaki Kakiuchi; Hiromasa Ohmi; Kei Nakamura…

2010-10-01T23:59:59.000Z

320

Refinery Capacity Report  

U.S. Energy Information Administration (EIA) Indexed Site

Refinery Capacity Report Refinery Capacity Report June 2013 With Data as of January 1, 2013 Independent Statistics & Analysis www.eia.gov U.S. Department of Energy Washington, DC 20585 This report was prepared by the U.S. Energy Information Administration (EIA), the statistical and analytical agency within the U.S. Department of Energy. By law, EIA's data, analyses, and forecasts are independent of approval by any other officer or employee of the United States Government. The views in this report therefore should not be construed as representing those of the Department of Energy or other Federal agencies. Table 1. Number and Capacity of Operable Petroleum Refineries by PAD District and State as of January 1, 2013

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Dual capacity reciprocating compressor  

DOE Patents (OSTI)

A multi-cylinder compressor particularly useful in connection with northern climate heat pumps and in which different capacities are available in accordance with reversing motor rotation is provided with an eccentric cam on a crank pin under a fraction of the connecting rods, and arranged for rotation upon the crank pin between opposite positions 180[degree] apart so that with cam rotation on the crank pin such that the crank throw is at its normal maximum value all pistons pump at full capacity, and with rotation of the crank shaft in the opposite direction the cam moves to a circumferential position on the crank pin such that the overall crank throw is zero. Pistons whose connecting rods ride on a crank pin without a cam pump their normal rate with either crank rotational direction. Thus a small clearance volume is provided for any piston that moves when in either capacity mode of operation. 6 figs.

Wolfe, R.W.

1984-10-30T23:59:59.000Z

322

Dual capacity reciprocating compressor  

DOE Patents (OSTI)

A multi-cylinder compressor 10 particularly useful in connection with northern climate heat pumps and in which different capacities are available in accordance with reversing motor 16 rotation is provided with an eccentric cam 38 on a crank pin 34 under a fraction of the connecting rods, and arranged for rotation upon the crank pin between opposite positions 180.degree. apart so that with cam rotation on the crank pin such that the crank throw is at its normal maximum value all pistons pump at full capacity, and with rotation of the crank shaft in the opposite direction the cam moves to a circumferential position on the crank pin such that the overall crank throw is zero. Pistons 24 whose connecting rods 30 ride on a crank pin 36 without a cam pump their normal rate with either crank rotational direction. Thus a small clearance volume is provided for any piston that moves when in either capacity mode of operation.

Wolfe, Robert W. (Wilkinsburg, PA)

1984-01-01T23:59:59.000Z

323

Refinery Capacity Report  

U.S. Energy Information Administration (EIA) Indexed Site

Refinery Capacity Report Refinery Capacity Report With Data as of January 1, 2013 | Release Date: June 21, 2013 | Next Release Date: June 20, 2014 Previous Issues Year: 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1997 1995 1994 Go Data series include fuel, electricity, and steam purchased for consumption at the refinery; refinery receipts of crude oil by method of transportation; and current and projected atmospheric crude oil distillation, downstream charge, and production capacities. Respondents are operators of all operating and idle petroleum refineries (including new refineries under construction) and refineries shut down during the previous year, located in the 50 States, the District of Columbia, Puerto Rico, the Virgin Islands, Guam, and other U.S. possessions.

324

Cordierite silicon nitride filters  

SciTech Connect

The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

Sawyer, J.; Buchan, B. (Acurex Environmental Corp., Mountain View, CA (United States)); Duiven, R.; Berger, M. (Aerotherm Corp., Mountain View, CA (United States)); Cleveland, J.; Ferri, J. (GTE Products Corp., Towanda, PA (United States))

1992-02-01T23:59:59.000Z

325

Holey Silicon as an Efficient Thermoelectric Material  

SciTech Connect

This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These ?holey silicon? (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35percent porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit. With a ZT value of 0.4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system.

Tang, Jinyao; Wang, Hung-Ta; Hyun Lee, Dong; Fardy, Melissa; Huo, Ziyang; Russell, Thomas P.; Yang, Peidong

2010-09-30T23:59:59.000Z

326

Method of forming crystalline silicon devices on glass  

DOE Patents (OSTI)

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

McCarthy, A.M.

1995-03-21T23:59:59.000Z

327

Method of forming crystalline silicon devices on glass  

DOE Patents (OSTI)

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

328

Spectral Reflectance of Silicon Photodiodes  

E-Print Network (OSTI)

Introduction Silicon photodiodes are among the most popular photodetectors that combine high performance over a wide wavelength range with unparalleled ease of use. High-quality photodiodes, in the form of a trap detector, 1,2 have many significant applications in precision radiometry. Their predictable responsivity in visible and near-infrared ~NIR! wavelengths allows the realization of high-accuracy spectral responsivity scales. 3,4 The spectral responsivity scales can be utilized in, for example, realization of luminous intensity 5,6 and spectral irradiance scales. 7,8 The spectral responsivity of a silicon photodiode is determined by the reflectance of the diode surface r~l! and the internal quantum deficiency d~l!. The values of d~l! and r~l! can be extrapolated 4 by mathematical models. To extrapolate the val

Atte Haapalinna; Petri Kärhä; Erkki Ikonen

329

Capacity of steganographic channels  

Science Journals Connector (OSTI)

An information-theoretic approach is used to determine the amount of information that may be safely transferred over a steganographic channel with a passive adversary. A steganographic channel, or stego-channel is a pair consisting of the channel transition ... Keywords: information spectrum, information theory, steganalysis, steganographic capacity, steganography, stego-channel

Jeremiah J. Harmsen; William A. Pearlman

2005-08-01T23:59:59.000Z

330

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates  

E-Print Network (OSTI)

We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS ...

Bulsara, Mayank

331

High Efficiency Silicon Solar Cells  

Science Journals Connector (OSTI)

Conversion efficiency has emerged as an important contributor to further reducing photovoltaic system cost. This presentation will discuss the various improvements that have increased...

Swanson, Richard

332

Capacity Value of Solar Power  

SciTech Connect

Evaluating the capacity value of renewable energy sources can pose significant challenges due to their variable and uncertain nature. In this paper the capacity value of solar power is investigated. Solar capacity value metrics and their associated calculation methodologies are reviewed and several solar capacity studies are summarized. The differences between wind and solar power are examined, the economic importance of solar capacity value is discussed and other assessments and recommendations are presented.

Duignan, Roisin; Dent, Chris; Mills, Andrew; Samaan, Nader A.; Milligan, Michael; Keane, Andrew; O'Malley, Mark

2012-11-10T23:59:59.000Z

333

Cryogenic temperature characteristics of bulk silicon and Silicon-on-Sapphire devices.  

E-Print Network (OSTI)

??Studies of Silicon-on-Sapphire (SOS) CMOS device operation in cryogenic environments are presented. The main focus was to observe the characteristic changes in high, medium and… (more)

Melton, Steven Allen

2012-01-01T23:59:59.000Z

334

Concentrator silicon cell research  

SciTech Connect

This project continued the developments of high-efficiency silicon concentrator solar cells with the goal of achieving a cell efficiency in the 26 to 27 percent range at a concentration level of 150 suns of greater. The target efficiency was achieved with the new PERL (passivated emitter, rear locally diffused) cell structure, but only at low concentration levels around 20 suns. The PERL structure combines oxide passivation of both top and rear surfaces of the cells with small area contact to heavily doped regions on the top and rear surfaces. Efficiency in the 22 to 23 percent range was also demonstrated for large-area concentrator cells fabricated with the buried contact solar cell processing sequence, either when combined with prismatic covers or with other innovative approaches to reduce top contact shadowing. 19 refs.

Green, M.A.; Wenham, S.R.; Zhang, F.; Zhao, J.; Wang, A. [New South Wales Univ., Kensington (Australia). Solar Photovoltaic Lab.

1992-04-01T23:59:59.000Z

335

Silicone plesiotherapy molds  

SciTech Connect

Plesiotherapy, the treatment of superficial lesions by radioactive molds has largely been replaced by teletherapy techniques involving high energy photon and electron beams. There are, however, situations for which a short distance type treatment, in one form or another, is superior to any other presently available. Traditionally, molds have taken the form of rigid devices incorporating clamps to attach them to the patient. This ensures a reproducible geometry about a localized region since the molds are applied on a daily basis. To make such devices requires considerable skill and patience. This article describes an alternative method that eliminates the use of cumbersome devices in many situations. Silicone molds made from a plaster cast model have been found suitable for the treatment of surface lesions and especially for lesions in the oral and nasal cavities. With the use of radioactive gold seeds the molds may be left in place for a few days without fear of them moving.

Karolis, C.; Reay-Young, P.S.; Walsh, W.; Velautham, G.

1983-04-01T23:59:59.000Z

336

Solar grade silicon: Technology status and industrial trends  

Science Journals Connector (OSTI)

Abstract Crystalline silicon remains (all variants included) the dominant technology to manufacture solar cells. Currently (2012–2013) more than 90% of all solar cells produced are based on this vast group of technologies. The availability, the cost and the quality to the silicon feedstock is therefore a strategic issue of paramount importance for the entire photovoltaic sector. The silicon demand/supply balance has evolved from a situation of shortage with rocketing sales prices, in the years 2005–2008, to currently (2012–2013) an oversupply situation with record low price level for virgin polysilicon. Between these two extreme periods, production capacity has been multiplied by a factor of nearly 10. A better understanding of the prevailing dynamics in the polysilicon/silicon industry is needed in order for all players in the solar cell industry to make proper planning. In light of the past developments as well as the constraints imposed by a sound competition, the present article reviews the market trends for solar grade silicon including capacity, supply, demand and price. Furthermore, the article reviews the competing commercial technologies i.e. Siemens polysilicon, fluidized bed reactor/FBR polysilicon and upgraded metallurgical/UMG silicon and compares them in terms of maturity, improvement potential, product morphology, purity, applications and cost (actual vs. potential).

Gøran Bye; Bruno Ceccaroli

2014-01-01T23:59:59.000Z

337

Refinery Capacity Report  

U.S. Energy Information Administration (EIA) Indexed Site

1 1 Idle Operating Total Stream Day Barrels per Idle Operating Total Calendar Day Barrels per Atmospheric Crude Oil Distillation Capacity Idle Operating Total Operable Refineries Number of State and PAD District a b b 14 10 4 1,617,500 1,205,000 412,500 1,708,500 1,273,500 435,000 ............................................................................................................................................... PAD District I 1 0 1 182,200 0 182,200 190,200 0 190,200 ................................................................................................................................................................................................................................................................................................ Delaware......................................

338

Tritium in amorphous silicon  

SciTech Connect

Preliminary results on infrared and luminescence measurements of tritium incorporated amorphous silicon are reported. Tritium is an unstable isotope that readily substitutes hydrogen in the amorphous silicon network. Due to its greater mass, bonded tritium is found to introduce new stretching modes in the infrared spectrum. Inelastic collisions between the beta particles, produced as a result of tritium decay, and the amorphous silicon network, results in the generation of excess electron-hole pairs. Radiative recombination of these carriers is observed.

Sidhu, L.S.; Kosteski, T.; O`Leary, S.K.; Gaspari, F.; Zukotynski, S. [Univ. of Toronto, Ontario (Canada). Dept. of Electrical and Computer Engineering; Kherani, N.P.; Shmadya, W. [Ontario Hydro Technologies, Toronto, Ontario (Canada)

1996-12-31T23:59:59.000Z

339

Functionalized Silicone Nanospheres: Synthesis, Transition Metal...  

NLE Websites -- All DOE Office Websites (Extended Search)

Functionalized Silicone Nanospheres: Synthesis, Transition Metal Immobilization, and Catalytic Applications. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

340

Single-crystalline silicon lift-off films for metaloxidesemiconductor devices on arbitrary substrates  

E-Print Network (OSTI)

foils using plasma- enhanced chemical-vapor deposition CVD of hydrogen- passivated, amorphous silicon (a-Si:HGaAs/GaAs heterojunction bipolar transistors on silicon,10 and high electron mobility transistors on quartz and sapphire11

Ludwig-Maximilians-Universität, München

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

E-Print Network 3.0 - atlas silicon tracker Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

system, based on double-sided silicon strip dectectors... of the pion tracker for HADES The pion tracker is a new detector component for the High Acceptance Di... . Silicon...

342

SOLAR MARKET POWERS SILICON  

Science Journals Connector (OSTI)

SOLAR MARKET POWERS SILICON ... Polysilicon shortages are boon to manufacturers, bane of solar energy industry ... Solar energy is a relatively new market for polysilicon manufacturers. ...

JEAN-FRA&CCEDIL;NOIS TREMBLAY

2006-10-02T23:59:59.000Z

343

Micromachined silicon electrostatic chuck  

DOE Patents (OSTI)

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

Anderson, R.A.; Seager, C.H.

1996-12-10T23:59:59.000Z

344

Amorphous Silicon: The other Silicon J.C. Sturm, Y. Huang, L. Han, T. Liu, *B. Hekmatshoar,  

E-Print Network (OSTI)

for cost reduction, and crystalline silicon- amorphous silicon interfaces for high performance solar cells for analog and high duty cycle applications, flexible substrates for products with new form factors, printing Fig. 2. Pixel circuits for (a) active matrix liquid crystal display and (b) active matrix organic

345

Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique  

DOE Patents (OSTI)

A method or producing hydrogenated amorphous silicon on a substrate, comprising the steps of: positioning the substrate in a deposition chamber at a distance of about 0.5 to 3.0 cm from a heatable filament in the deposition chamber; maintaining a pressure in said deposition chamber in the range of about 10 to 100 millitorr and pressure times substrate-filament spacing in the range of about 10 to 100 millitorr-cm, heating the filament to a temperature in the range of about 1,500 to 2,000.degree. C., and heating the substrate to a surface temperature in the range of about 280 to 475.degree. C.; and flowing silicohydride gas into the deposition chamber with said heated filament, decomposing said silicohydride gas into silicon and hydrogen atomic species and allowing products of gas reactions between said atomic species and the silicohydride gas to migrate to and deposit on said substrate while adjusting and maintaining said pressure times substrate-filament spacing in said deposition chamber at a value in said 10 to 100 millitorr range to produce statistically about 3 to 50 atomic collisions between the silicon and hydrogen atomic species migrating to said substrate and undecomposed molecules of the silane or other silicohydride gas in the deposition chamber.

Molenbroek, Edith C. (Utrecht, NL); Mahan, Archie Harvin (Golden, CO); Gallagher, Alan C. (Louisville, CO)

2000-09-26T23:59:59.000Z

346

Representation of Solar Capacity Value in the ReEDS Capacity Expansion Model  

SciTech Connect

An important issue for electricity system operators is the estimation of renewables' capacity contributions to reliably meeting system demand, or their capacity value. While the capacity value of thermal generation can be estimated easily, assessment of wind and solar requires a more nuanced approach due to the resource variability. Reliability-based methods, particularly assessment of the Effective Load-Carrying Capacity, are considered to be the most robust and widely-accepted techniques for addressing this resource variability. This report compares estimates of solar PV capacity value by the Regional Energy Deployment System (ReEDS) capacity expansion model against two sources. The first comparison is against values published by utilities or other entities for known electrical systems at existing solar penetration levels. The second comparison is against a time-series ELCC simulation tool for high renewable penetration scenarios in the Western Interconnection. Results from the ReEDS model are found to compare well with both comparisons, despite being resolved at a super-hourly temporal resolution. Two results are relevant for other capacity-based models that use a super-hourly resolution to model solar capacity value. First, solar capacity value should not be parameterized as a static value, but must decay with increasing penetration. This is because -- for an afternoon-peaking system -- as solar penetration increases, the system's peak net load shifts to later in the day -- when solar output is lower. Second, long-term planning models should determine system adequacy requirements in each time period in order to approximate LOLP calculations. Within the ReEDS model we resolve these issues by using a capacity value estimate that varies by time-slice. Within each time period the net load and shadow price on ReEDS's planning reserve constraint signals the relative importance of additional firm capacity.

Sigrin, B.; Sullivan, P.; Ibanez, E.; Margolis, R.

2014-03-01T23:59:59.000Z

347

Thermally Oxidized Silicon  

NLE Websites -- All DOE Office Websites (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

348

Method for forming silicon on a glass substrate  

DOE Patents (OSTI)

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

349

Diamond-Silicon Carbide Composite And Method For Preparation Thereof  

DOE Patents (OSTI)

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Qian, Jiang (Los Alamos, NM); Zhao, Yusheng (Los Alamos, NM)

2005-09-06T23:59:59.000Z

350

Process and apparatus for obtaining silicon from fluosilicic acid  

DOE Patents (OSTI)

Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

Sanjurjo, Angel (San Jose, CA)

1988-06-28T23:59:59.000Z

351

Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Annual subcontract report, January 1, 1995--December 31, 1995  

SciTech Connect

The objective of this three-year program is to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance and expand Solarex`s commercial production capacities. Two specific objectives of this program are to reduce the manufacturing cost for polycrystalline silicon PV modules to less than $1.20/watt and to increase the manufacturing capacity by a factor of three.

Wohlgemuth, J. [Amoco/Enron Solar, Frederick, MD (United States)] [Amoco/Enron Solar, Frederick, MD (United States)

1996-06-01T23:59:59.000Z

352

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

Science Journals Connector (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n+) and boron (p+) diffused surfaces decreases by factors of ?25 and ?10 respectively. Conversely the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm2 for n+ and ?100 m? cm2 for p+ surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n+ surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

J. Bullock; A. Cuevas

2014-01-01T23:59:59.000Z

353

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

SciTech Connect

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [École Polytechnique Fédérale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladière 71, CH-200 Neuchâtel (Switzerland)

2014-04-28T23:59:59.000Z

354

Device Architecture Simplification of Laser Pattering in High-Volume Crystalline Silicon Solar Cell Fabrication using Intensive Computation for Design and Optimization  

SciTech Connect

Prices of Si based solar modules have been continuously declining in recent years. Goodrich is pointing out that a significant portion of these cost reductions have come about due to ?economies of scale? benefits, but there is a point of diminishing returns when trying to lower cost by simply expanding production capacity [1]. Developing innovative high volume production technologies resulting in an increase of conversion efficiency without adding significant production cost will be necessary to continue the projected cost reductions. The Foundational Program to Advance Cell Efficiency (F-PACE) is seeking to achieve this by closing the PV efficiency gap between theoretical achievable maximum conversion efficiency - 29% for c-Si - and the current typical production - 18.5% for a typical full area back contact c-Si Solar cell ? while targeting a module cost of $0.50/Watt . The research conducted by SolarWorldUSA and it?s partners within the FPACE framework focused on the development of a Hybrid metal-wrap-through (MWT) and laser-ablated PERC solar cell design employing a extrusion metallization scheme to achieve >20% efficient devices. The project team was able to simulate, develop and demonstrate the technologies necessary to build p-type MWT PERC cells with extruded front contacts. Conversion efficiencies approaching 20% were demonstrated and a path for further efficiency improvements identified. A detailed cost of ownership calculation for such a device was based on a NREL cost model and is predicting a $/Watt cost below 85 cents on a 180 micron substrate. Several completed or planned publications by SolarWorldUSA and our partners are based on the research conducted within this project and are adding to a better understanding of the involved technologies and materials. Several aspects and technologies of the proposed device have been assessed in regards to technical effectiveness and economic feasibility. It has been shown in a pilot demonstration with wafer thicknesses down to 120 micron that further wafer thickness reduction is only economically viable if handling and contact formation limitations are addressed simultaneously. Furthermore the project partners assessed and demonstrated the feasibility of processing wafers with vias connecting front and back sides through a PERC cell process and aligning and connecting those vias with a non-contact metallization. A close cooperation between industry and institutes of higher education in the Pacific Northwest as shown in this project is of direct benefit to the public and is contributing to the education of the next generation of PV engineers and scientist.

Grupp Mueller, Guenther [SolarWorld; Herfurth, Hans [Fraunhofer CLT; Dunham, Scott [University of Washington; Xu, Baomin [PARC

2013-11-15T23:59:59.000Z

355

Graphene-Silicon Schottky Diodes  

Science Journals Connector (OSTI)

Graphene-Silicon Schottky Diodes ... We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. ... The I–V characteristics measured at 100, 300, and 400 K indicate that temperature strongly influences the ideality factor of graphene–silicon Schottky diodes. ...

Chun-Chung Chen; Mehmet Aykol; Chia-Chi Chang; A. F. J. Levi; Stephen B. Cronin

2011-04-25T23:59:59.000Z

356

Nuclear magnetic resonance studies of hydrogen in amorphous silicon  

SciTech Connect

Proton and deuteron NMR in hydrogenated amorphous silicon yield quantitative measures of species-specific structural configurations and their dynamics. Populations of silicon-bonded and molecular hydrogens correlate with photovoltaic quality, doping, illumination/dark anneal sequences, and with infrared and other characterizations. High quality films contain substantial populations of nanovoid-trapped molecular hydrogen.

Norberg, R.E.; Fedders, P.A.; Leopold, D.J. [Washington Univ., St. Louis, MO (United States). Dept. of Physics

1996-12-31T23:59:59.000Z

357

Epitaxial graphene on silicon carbide: Introduction to structured graphene  

E-Print Network (OSTI)

Epitaxial graphene on silicon carbide: Introduction to structured graphene Ming Ruan 1 , Yike Hu 1, France Abstract We present an introduction to the rapidly growing field of epitaxial graphene on silicon present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now

Paris-Sud XI, Université de

358

Novel Semiconducting Silicon and Germanium Nanotubes  

E-Print Network (OSTI)

In this work we report new silicon and germanium nanotube structures, with no corresponding stable carbon analogues and which cannot be described by integer chiral indices. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that the structures are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. They also present high Young modulus values (0.25 and 0.15 TPa, respectively).

Perim, Eric; Botari, Tiago; Galvao, Douglas S

2014-01-01T23:59:59.000Z

359

DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE  

E-Print Network (OSTI)

DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE (DIMOS) transistor structure in 4H-Silicon Carbide (SiC) is presented. Simulation for transport Silicon carbide (SiC), a wide bandgap material, shows a tremendous potential for high temperature

Tolbert, Leon M.

360

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices  

E-Print Network (OSTI)

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices will be available after the conference. Abstract Silicon Carbide devices can achieve very high switching speed-mode filtering). The consequences on the switching speed are discussed. 1. Introduction Silicon carbide (Si

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Safety profile, efficacy, and biodistribution of a bicistronic high-capacity adenovirus vector encoding a combined immunostimulation and cytotoxic gene therapy as a prelude to a phase I clinical trial for glioblastoma  

SciTech Connect

Adenoviral vectors (Ads) are promising gene delivery vehicles due to their high transduction efficiency; however, their clinical usefulness has been hampered by their immunogenicity and the presence of anti-Ad immunity in humans. We reported the efficacy of a gene therapy approach for glioma consisting of intratumoral injection of Ads encoding conditionally cytotoxic herpes simplex type 1 thymidine kinase (Ad-TK) and the immunostimulatory cytokine fms-like tyrosine kinase ligand 3 (Ad-Flt3L). Herein, we report the biodistribution, efficacy, and neurological and systemic effects of a bicistronic high-capacity Ad, i.e., HC-Ad-TK/TetOn-Flt3L. HC-Ads elicit sustained transgene expression, even in the presence of anti-Ad immunity, and can encode large therapeutic cassettes, including regulatory elements to enable turning gene expression “on” or “off” according to clinical need. The inclusion of two therapeutic transgenes within a single vector enables a reduction of the total vector load without adversely impacting efficacy. Because clinically the vectors will be delivered into the surgical cavity, normal regions of the brain parenchyma are likely to be transduced. Thus, we assessed any potential toxicities elicited by escalating doses of HC-Ad-TK/TetOn-Flt3L (1 × 10{sup 8}, 1 × 10{sup 9}, or 1 × 10{sup 10} viral particles [vp]) delivered into the rat brain parenchyma. We assessed neuropathology, biodistribution, transgene expression, systemic toxicity, and behavioral impact at acute and chronic time points. The results indicate that doses up to 1 × 10{sup 9} vp of HC-Ad-TK/TetOn-Flt3L can be safely delivered into the normal rat brain and underpin further developments for its implementation in a phase I clinical trial for glioma. - Highlights: ? High capacity Ad vectors elicit sustained therapeutic gene expression in the brain. ? HC-Ad-TK/TetOn-Flt3L encodes two therapeutic genes and a transcriptional switch. ? We performed a dose escalation study at acute and chronic time points. ? Doses up to 1 × 10{sup 9} vp of HC-Ad-TK/TetOn-Flt3L can be safely delivered in the brain. ? Efficacy and safety of HC-Ad-TK/TetOn-Flt3L merits its use in a GBM Phase I trial.

Puntel, Mariana [Department of Neurosurgery, The University of Michigan School of Medicine, MSRB II, RM 4570C, 1150 West Medical Center Drive, Ann Arbor, MI 48109-5689 (United States); Department of Cell and Developmental Biology, The University of Michigan School of Medicine, MSRB II, RM 4570C, 1150 West Medical Center Drive, Ann Arbor, MI 48109-5689 (United States); Gene Therapeutics Research Institute, Cedars-Sinai Medical Center, Los Angeles, CA 90048 (United States); Ghulam, Muhammad A.K.M. [Gene Therapeutics Research Institute, Cedars-Sinai Medical Center, Los Angeles, CA 90048 (United States); Farrokhi, Catherine [Department of Psychiatry and Behavioral Neurosciences, Cedars Sinai Medical Center, Los Angeles, CA 90048 (United States); VanderVeen, Nathan; Paran, Christopher; Appelhans, Ashley [Department of Neurosurgery, The University of Michigan School of Medicine, MSRB II, RM 4570C, 1150 West Medical Center Drive, Ann Arbor, MI 48109-5689 (United States); Department of Cell and Developmental Biology, The University of Michigan School of Medicine, MSRB II, RM 4570C, 1150 West Medical Center Drive, Ann Arbor, MI 48109-5689 (United States); Kroeger, Kurt M.; Salem, Alireza [Gene Therapeutics Research Institute, Cedars-Sinai Medical Center, Los Angeles, CA 90048 (United States); Lacayo, Liliana [Department of Psychiatry and Behavioral Neurosciences, Cedars Sinai Medical Center, Los Angeles, CA 90048 (United States); Pechnick, Robert N. [Department of Psychiatry and Behavioral Neurosciences, Cedars Sinai Medical Center, Los Angeles, CA 90048 (United States); Department of Psychiatry and Behavioral Neurosciences, David Geffen School of Medicine, University of California, Los Angeles, CA (United States); Kelson, Kyle R.; Kaur, Sukhpreet; Kennedy, Sean [Gene Therapeutics Research Institute, Cedars-Sinai Medical Center, Los Angeles, CA 90048 (United States); Palmer, Donna; Ng, Philip [Department of Molecular and Human Genetics, Baylor College of Medicine, Houston, TX 77030 (United States); and others

2013-05-01T23:59:59.000Z

362

Efficient power coupling to waveguides in high index contrast systems  

E-Print Network (OSTI)

Future integrated optical circuits will hold, on a single chip, several optical components that communicate via high index contrast waveguides. Silicon nitride (SixNy) and silicon oxynitride (SixOyNz) waveguides with silicon ...

Nguyen, Victor T. (Victor Trinh)

2006-01-01T23:59:59.000Z

363

Developing High Capacity, Long Life Anodes  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2000 25000 30000 35000 40000 1578 G Intensity Raman Shift cm -1 1340 D Two Raman scattering peaks at 1578 and 1340 cm -1 are assigned as G and D band, respectively. ...

364

Developing High Capacity, Long Life Anodes  

Energy.gov (U.S. Department of Energy (DOE))

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

365

Developing High Capacity, Long Life Anodes  

Energy.gov (U.S. Department of Energy (DOE))

2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

366

Design and Evaluation of High Capacity Cathodes  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

to prepare advanced electrodes and surfaces with stable architectural designs Use atomic-scale modeling as a guide to identify, design and understand the structural...

367

Design and Evaluation of High Capacity Cathodes  

Energy.gov (U.S. Department of Energy (DOE))

2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

368

First mideast capacity planned  

SciTech Connect

Kuwait catalyst Co.`s (KCC) plans to build a hydrodesulfurization (HDS) catalysts plant in Kuwait will mark the startup of the first refining catalysts production in the Persian Gulf region. KCC, owned by a conglomerate of Kuwait companies and governmental agencies, has licensed catalyst manufacturing technology from Japan Energy in a deal estimated at more than 7 billion ($62 million). Plant design will be based on technology from Orient Catalyst, Japan Energy`s catalysts division. Construction is expected to begin in January 1997 for production startup by January 1998. A source close to the deal says the new plant will eventually reach a capacity of 5,000 m.t./year of HDS catalysts to supply most of Kuwait`s estimated 3,500-m.t./year demand, driven primarily by Kuwait National Petroleum refineries. KCC also expects to supply demand from other catalyst consumers in the region. Alumina supply will be acquired on the open market. KCC will take all production from the plant and will be responsible for marketing.

Fattah, H.

1996-11-06T23:59:59.000Z

369

Electric Capacity | OpenEI  

Open Energy Info (EERE)

Capacity Capacity Dataset Summary Description The New Zealand Ministry of Economic Development publishes an annual Energy Outlook, which presents projections of New Zealand's future energy supply, demand, prices and greenhouse gas emissions. The principle aim of these projections is to inform the national energy debate. Included here are the model results for electricity and generation capacity. The spreadsheet provides an interactive tool for selecting which model results to view, and which scenarios to evaluate; full model results for each scenario are also included. Source New Zealand Ministry of Economic Development Date Released Unknown Date Updated December 15th, 2010 (3 years ago) Keywords Electric Capacity Electricity Generation New Zealand projections

370

Adaptive capacity and its assessment  

SciTech Connect

This paper reviews the concept of adaptive capacity and various approaches to assessing it, particularly with respect to climate variability and change. I find that adaptive capacity is a relatively under-researched topic within the sustainability science and global change communities, particularly since it is uniquely positioned to improve linkages between vulnerability and resilience research. I identify opportunities for advancing the measurement and characterization of adaptive capacity by combining insights from both vulnerability and resilience frameworks, and I suggest several assessment approaches for possible future development that draw from both frameworks and focus on analyzing the governance, institutions, and management that have helped foster adaptive capacity in light of recent climatic events.

Engle, Nathan L.

2011-04-20T23:59:59.000Z

371

Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide...

372

Optical properties of nanostructured silicon-rich silicon dioxide  

E-Print Network (OSTI)

We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

Stolfi, Michael Anthony

2006-01-01T23:59:59.000Z

373

Silicon Border Development LLC | Open Energy Information  

Open Energy Info (EERE)

Silicon Border Development LLC Silicon Border Development LLC Jump to: navigation, search Name Silicon Border Development LLC Place Poway, California Zip 92064 Sector Solar Product US-based developer of industrial parks with a focus on high-technology industry such as semiconductors and solar. Coordinates 32.95459°, -117.041984° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.95459,"lon":-117.041984,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

374

A high performance thin film thermoelectric cooler  

SciTech Connect

Thin film thermoelectric devices with small dimensions have been fabricated using microelectronics technology and operated successfully in the Seebeck mode as sensors or generators. However, they do not operate successfully in the Peltier mode as coolers, because of the thermal bypass provided by the relatively thick substrate upon which the thermoelectric device is fabricated. In this paper a processing sequence is described which dramatically reduces this thermal bypass and facilitates the fabrication of high performance integrated thin film thermoelectric coolers. In the processing sequence a very thin amorphous SiC (or SiO{sub 2}SiN{sub 4}) film is deposited on a silicon substrate using conventional thin film deposition and a membrane formed by removing the silicon substrate over a desired region using chemical etching or micro-machining. Thermoelements are deposited on the membrane using conventional thin film deposition and patterning techniques and configured so that the region which is to be cooled is abutted to the cold junctions of the Peltier thermoelements while the hot junctions are located at the outer peripheral area which rests on the silicon substrate rim. Heat is pumped laterally from the cooled region to the silicon substrate rim and then dissipated vertically through it to an external heat sink. Theoretical calculations of the performance of a cooler described above indicate that a maximum temperature difference of about 40--50K can be achieved with a maximum heat pumping capacity of around 10 milliwatts.

Rowe, D.M.; Min, G.; Volklein, F.

1998-07-01T23:59:59.000Z

375

Method for forming fibrous silicon carbide insulating material  

DOE Patents (OSTI)

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Wei, George C. (Oak Ridge, TN)

1984-01-01T23:59:59.000Z

376

Method for forming fibrous silicon carbide insulating material  

DOE Patents (OSTI)

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Wei, G.C.

1983-10-12T23:59:59.000Z

377

Silicon Valley Power - Solar Electric Buy Down Program | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar Electric Buy Down Program Solar Electric Buy Down Program Silicon Valley Power - Solar Electric Buy Down Program < Back Eligibility Commercial Residential Savings Category Solar Buying & Making Electricity Maximum Rebate Residential: $20,000 Program Info State California Program Type Utility Rebate Program Rebate Amount Incentives step down over time as installed capacity goals are met. Check program web site for current incentive level. '''Rebate levels as of 9/20/12:''' Residential: $2.00/watt AC Commercial (up to 100 kW): $1.10/watt AC Commercial (>100 kW to 1 MW): $0.15/kWh for 5 years Provider Silicon Valley Power Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as certain installed

378

Neutron Storage in a Longitudinally Vibrating Silicon Crystal  

Science Journals Connector (OSTI)

The storage of cold neutrons in a longitudinally vibrating silicon crystal is demonstrated by time-resolved transmission experiments on a high-resolution backscattering spectrometer. The experimental results are compared with Monte Carlo simulations.

Hock, R.

1998-04-01T23:59:59.000Z

379

Schmid Silicon Technology GmbH SST | Open Energy Information  

Open Energy Info (EERE)

to: navigation, search Name: Schmid Silicon Technology GmbH (SST) Place: Freudenstadt, Germany Zip: D-72250 Sector: Solar Product: Germany-based technology provider for high-end...

380

Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon  

E-Print Network (OSTI)

and investigate fundamental properties. Noble metal nanoparticles made of gold or silver are grown in cavities in monocrystalline silicon formed by helium ion implantation and high temperature annealing at depth greater than 500 nm from the surface. Metals...

Martin, Michael S.

2013-08-13T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Rapid Wolff–Kishner reductions in a silicon carbide microreactor  

E-Print Network (OSTI)

Wolff–Kishner reductions are performed in a novel silicon carbide microreactor. Greatly reduced reaction times and safer operation are achieved, giving high yields without requiring a large excess of hydrazine. The corrosion ...

Newman, Stephen G.

2014-01-01T23:59:59.000Z

382

Simulation of iron impurity gettering in crystalline silicon solar cells  

E-Print Network (OSTI)

This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

Powell, Douglas M. (Douglas Michael)

2012-01-01T23:59:59.000Z

383

Indium oxide/n-silicon heterojunction solar cells  

DOE Patents (OSTI)

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1982-12-28T23:59:59.000Z

384

Carbon monoxide-silicon carbide interaction in HTGR fuel particles  

Science Journals Connector (OSTI)

The corrosion of the coating-layers of silicon carbide (SiC) by carbon monoxide (CO) was observed in irradiated Triso-coated uranium dioxide particles, used in high-temperature gas-cooled reactors, by optical ...

Kazuo Minato; Toru Ogawa; Satoru Kashimura; Kousaku Fukuda…

1991-05-01T23:59:59.000Z

385

Akros Silicon | Open Energy Information  

Open Energy Info (EERE)

Akros Silicon Akros Silicon Jump to: navigation, search Name Akros Silicon Place Folsom, California Zip 95630 Product Akros Silicon specilizes in fabless semicondutors used for Power Over Ethernet, networks, and broadband. References Akros Silicon[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Akros Silicon is a company located in Folsom, California . References ↑ "Akros Silicon" Retrieved from "http://en.openei.org/w/index.php?title=Akros_Silicon&oldid=341960" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load)

386

Underground Natural Gas Storage Capacity  

Gasoline and Diesel Fuel Update (EIA)

. . Underground Natural Gas Storage Capacity by State, December 31, 1996 (Capacity in Billion Cubic Feet) Table State Interstate Companies Intrastate Companies Independent Companies Total Number of Active Fields Capacity Number of Active Fields Capacity Number of Active Fields Capacity Number of Active Fields Capacity Percent of U.S. Capacity Alabama................. 0 0 1 3 0 0 1 3 0.04 Arkansas ................ 0 0 3 32 0 0 3 32 0.40 California................ 0 0 10 470 0 0 10 470 5.89 Colorado ................ 4 66 5 34 0 0 9 100 1.25 Illinois ..................... 6 259 24 639 0 0 30 898 11.26 Indiana ................... 6 16 22 97 0 0 28 113 1.42 Iowa ....................... 4 270 0 0 0 0 4 270 3.39 Kansas ................... 16 279 2 6 0 0 18 285 3.57 Kentucky ................ 6 167 18 49 0 0 24 216 2.71 Louisiana................ 8 530 4 25 0 0 12 555 6.95 Maryland ................ 1 62

387

Advanced Light-Trapping in Thin-Film Silicon Solar Cells  

Science Journals Connector (OSTI)

Light-trapping schemes are essential for high efficiency thin-film Silicon devices. Implementation of various light-trapping/scattering elements will be discussed. An optimum textured...

Wyrsch, Nicolas

388

ULTRA CLEAN COAL PRODUCTION USING DENSE MEDIUM SEPARATION FOR THE SILICON MARKET.  

E-Print Network (OSTI)

??The production of high quality silicon requires the use of ultraclean coal containing less than 1.5% ash. The magnetite used to clean the coal in… (more)

Amini, Seyed Hassan

2014-01-01T23:59:59.000Z

389

E-Print Network 3.0 - amorphous silicon nitride Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

nitride, aluminium oxide, titanium nitride are promising materials for the high... of powder analysis made by the following processes: - Preparation of silicon nitride by...

390

Method for silicon carbide production by reacting silica with hydrocarbon gas  

DOE Patents (OSTI)

A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1994-01-01T23:59:59.000Z

391

COMMUNITY CAPACITY BUILDING THROUGH TECHNOLOGY  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

COMMUNITY CAPACITY BUILDING THROUGH TECHNOLOGY COMMUNITY CAPACITY BUILDING THROUGH TECHNOLOGY Empowering Communities in the Age of E-Government Prepared by Melinda Downing, Environmental Justice Program Manager, U.S. Department of Energy MAR 06 MARCH 2006 Since 1999, the Department of Energy has worked with the National Urban Internet and others to create community capacity through technology.  Empowering Communities in the Age of E-Government Table of Contents Message from the Environmental Justice Program Manager . . . . . . . . 3 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Partnerships. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Process Chart: From Agency to Community. . . . . . . . . . . . . . . . . . . 7 Case Studies. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

392

Electrochemical thinning of silicon  

DOE Patents (OSTI)

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Medernach, John W. (Albuquerque, NM)

1994-01-01T23:59:59.000Z

393

Electrochemical thinning of silicon  

DOE Patents (OSTI)

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Medernach, J.W.

1994-01-11T23:59:59.000Z

394

Safety and Line Capacity in Railways – An Approach in Timed CSP  

Science Journals Connector (OSTI)

Railways need to be safe and, at the same time, should offer high capacity. While the notion of safety is well understood in the railway domain, the meaning of capacity is understood only on an intuitive and i...

Yoshinao Isobe; Faron Moller; Hoang Nga Nguyen…

2012-01-01T23:59:59.000Z

395

On the Capacity of Hybrid Wireless Networks with Opportunistic Routing  

Science Journals Connector (OSTI)

This paper studies the capacity of hybrid wireless networks with opportunistic routing (OR). ... algorithm to exploit high speed data transmissions in infrastructure network through base stations. We then develop...

Tan Le; Yong Liu

2009-01-01T23:59:59.000Z

396

Solid-state hydrogen storage: Storage capacity, thermodynamics, and kinetics  

Science Journals Connector (OSTI)

Solid-state reversible hydrogen storage systems hold great promise for onboard applications. ... key criteria for a successful solid-state reversible storage material are high storage capacity, suitable thermodyn...

William Osborn; Tippawan Markmaitree; Leon L. Shaw; Ruiming Ren; Jianzhi Hu…

2009-04-01T23:59:59.000Z

397

generation capacity | OpenEI  

Open Energy Info (EERE)

generation capacity generation capacity Dataset Summary Description This dataset comes from the Energy Information Administration (EIA), and is part of the 2011 Annual Energy Outlook Report (AEO2011). Source EIA Date Released April 26th, 2011 (3 years ago) Date Updated Unknown Keywords AEO Electricity electricity market module region generation capacity Data application/vnd.ms-excel icon AEO2011: Electricity Generation Capacity by Electricity Market Module Region and Source- Reference Case (xls, 10.6 KiB) Quality Metrics Level of Review Peer Reviewed Comment Temporal and Spatial Coverage Frequency Annually Time Period 2008-2035 License License Open Data Commons Public Domain Dedication and Licence (PDDL) Comment Rate this dataset Usefulness of the metadata Average vote Your vote

398

Effects of dietary silicon on bone characteristics of poultry  

E-Print Network (OSTI)

of the metal which they contain. Evidence indicates that silicon in the form of sodium meta-silicate (Na Si0 . 9H20) may be tied in with early bone calcification of weanling rats (Carlisle, 1970). The present study was designed to determine if additional..., demonstrated that many of the early workers on the distribution of silicon in the animal body reported values much too high. The amount of silicon reported in biological materials varies greatly; rats have approximately two percent silica in whole blood...

Plyler, James Edward

2012-06-07T23:59:59.000Z

399

Method of fabricating silicon carbide coatings on graphite surfaces  

DOE Patents (OSTI)

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

1994-07-26T23:59:59.000Z

400

Method of fabricating silicon carbide coatings on graphite surfaces  

DOE Patents (OSTI)

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

Varacalle, Jr., Dominic J. (Idaho Falls, ID); Herman, Herbert (Port Jefferson, NY); Burchell, Timothy D. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

NREL: Photovoltaics Research - Silicon Materials and Devices R&D  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Materials and Devices R&D Silicon Materials and Devices R&D R&D 100 Awards Since 2010, we have won three R&D 100 Awards. Flash Quantum Efficiency (Flash QE) System for Solar Cells Innovalight Silicon Ink Process Low-Cost Black Silicon Etching Process Graphic of three layers. The bottom layer, called inexpensive substrate, is white. Middle dark blue layer is called the seed. Top light blue layer has the text epi c-Si absorber. Schematic diagram of the film crystal silicon solar cell. A high-quality crystal silicon absorber is grown epitaxially on a seed layer applied to an inexpensive foreign substrate (e.g., display glass or rolled metal foil). At NREL, we are developing various emitter, back-surface field, and light-trapping strategies. NREL has world-leading research capabilities and expertise in silicon

402

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents (OSTI)

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20T23:59:59.000Z

403

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents (OSTI)

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

404

California Working Natural Gas Underground Storage Capacity ...  

Gasoline and Diesel Fuel Update (EIA)

Working Natural Gas Underground Storage Capacity (Million Cubic Feet) California Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Year Jan Feb Mar Apr May Jun...

405

California Working Natural Gas Underground Storage Capacity ...  

U.S. Energy Information Administration (EIA) Indexed Site

Working Natural Gas Underground Storage Capacity (Million Cubic Feet) California Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Decade Year-0 Year-1 Year-2...

406

Economic Dispatch of Electric Generation Capacity | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Economic Dispatch of Electric Generation Capacity Economic Dispatch of Electric Generation Capacity A report to congress and the states pursuant to sections 1234 and 1832 of the...

407

Synthesis of silicon nanotubes by DC arc plasma method  

SciTech Connect

Plasma synthesis is a novel technique of synthesis of nanomaterials as they provide high rate of production and promote metastable reactions. Very thin walled silicon nanotubes were synthesized in a DC direct arc thermal plasma reactor. The effect of parameters of synthesis i.e. arc current and presence of hydrogen on the morphology of Si nanoparticles is reported. Silicon nanotubes were characterized by Transmission Electron Microscopy (TEM), Local Energy Dispersive X-ray analysis (EDAX), and Scanning Tunneling Microscopy (STM).

Tank, C. M.; Bhoraskar, S. V.; Mathe, V. L. [Department of Physics, University of Pune, Pune-7, Maharashtra (India)

2012-06-05T23:59:59.000Z

408

Photonic Crystal Cavities in Cubic Polytype Silicon Carbide Films  

E-Print Network (OSTI)

We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1250 - 1600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

Radulaski, Marina; Buckley, Sonia; Rundquist, Armand; Provine, J; Alassaad, Kassem; Ferro, Gabriel; Vu?kovi?, Jelena

2013-01-01T23:59:59.000Z

409

production capacity | OpenEI  

Open Energy Info (EERE)

production capacity production capacity Dataset Summary Description No description given. Source Oak Ridge National Laboratory Date Released November 30th, 2009 (4 years ago) Date Updated Unknown Keywords biodiesel ethanol location production capacity transportation Data application/zip icon Biorefineries.zip (zip, 7 MiB) Quality Metrics Level of Review Some Review Comment Temporal and Spatial Coverage Frequency Time Period License License Other or unspecified, see optional comment below Comment Rate this dataset Usefulness of the metadata Average vote Your vote Usefulness of the dataset Average vote Your vote Ease of access Average vote Your vote Overall rating Average vote Your vote Comments Login or register to post comments If you rate this dataset, your published comment will include your rating.

410

installed capacity | OpenEI  

Open Energy Info (EERE)

installed capacity installed capacity Dataset Summary Description Estimates for each of the 50 states and the entire United States show Source Wind Powering America Date Released February 04th, 2010 (4 years ago) Date Updated April 13th, 2011 (3 years ago) Keywords annual generation installed capacity usa wind Data application/vnd.ms-excel icon Wind potential data (xls, 102.4 KiB) Quality Metrics Level of Review Some Review Comment Temporal and Spatial Coverage Frequency Time Period License License Other or unspecified, see optional comment below Comment Work of the U.S. Federal Government. Rate this dataset Usefulness of the metadata Average vote Your vote Usefulness of the dataset Average vote Your vote Ease of access Average vote Your vote Overall rating Average vote Your vote Comments

411

Building Regulatory Capacity for Change  

NLE Websites -- All DOE Office Websites (Extended Search)

Regulatory Capacity for Regulatory Capacity for Change PRESENTED BY Sarah Spencer-Workman, LEED AP July 27, 2011 "How to identify and review laws relevant to buildings and find places and opportunities that can accept changes that would support building energy objectives" Presentation Highlights Rulemaking Community and Stakeholder Identification To Support Code Changes Engagement: Building Capacity for Change Pay It Forward RULEMAKING : Plan Development and Research of Laws Relevant to Buildings How is it conducted? 'Landscape' Review Key words or phrases to look for Identify "home rule" jurisdictions Update and review cycle built in 'Landscape' Review:

412

Hybrid diamond-silicon angular-dispersive x-ray monochromator with 0.25-meV energy bandwidth and high spectral efficiency  

Science Journals Connector (OSTI)

We report on the design, implementation, and performance of an x-ray monochromator with ultra-high energy resolution (?E/E ? 2.7 × 10?8) and...

Stoupin, S; Shvyd’ko, Y V; Shu, D; Blank, V D; Terentyev, S A; Polyakov, S N; Kuznetsov, M S; Lemesh, I; Mundboth, K; Collins, S P; Sutter, J P; Tolkiehn, M

2013-01-01T23:59:59.000Z

413

20% efficiency silicon solar cells  

Science Journals Connector (OSTI)

Further improvements in crystalline silicon solar cell performance have been obtained by combining the high levels of surface recombination control demonstrated in earlier passivated emitter solar cells with an improved optical approach. This approach involves the use of microgrooved surfaces which retain the advantages of pyramidally textured surfaces while avoiding some disadvantages of the latter. The approach results in a 5–6% improvement in cell short?circuit current density for cells fabricated on 0.1 and 0.2 ??cm (?p type) substrates. This results in an energy conversion efficiency for these devices above 20% under standard terrestrial test conditions (AM1.5 100 mW/cm2) for the first time.

A. W. Blakers; M. A. Green

1986-01-01T23:59:59.000Z

414

Structure and photoelectrochemical properties of silicon microstructures arrays  

Science Journals Connector (OSTI)

Abstract Two silicon microstructrues of silicon nanowires (SiNWs) and silicon microchannel plates (Si MCP) have been successfully fabricated combined by standard microelectronics technology and electrochemical method. The performances have been investigated for dye-sensitized solar cells (DSSCs) by applying silicon nanowires (SiNWs) and silicon microchannel plates (Si MCP) to the counter electrode, respectively. And the electrocatalytic activities of Si MCP and SiNWs electrodes for triiodide reduction were studied using electrochemical impedance spectroscopy. The two microstructure electrodes consisting of a large number of channels with high surface to volume ratio exhibits a highly interconnected network structure with good catalytic activity. A high photovolatic conversion efficiency of over 7.01% and 7.86% were recorded for \\{DSSCs\\} based on the Si MCP and SiNWs counter electrodes, which is comparatable to the cell based on conventional Pt counter electrode at the same condition. It could be expected that this low cost SiNWs and Si MCP and compatibility with microelectronic technology would make the silicon-based monolithic DSSC available in practical application.

Bairui Tao; Fengjuan Miao; Junhao Chu

2013-01-01T23:59:59.000Z

415

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector  

DOE Patents (OSTI)

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

Holland, Stephen Edward (Hercules, CA)

2000-02-15T23:59:59.000Z

416

Solution-Grown Silicon Nanowires for Lithium-Ion Battery Anodes  

E-Print Network (OSTI)

interest in using nanomaterials for advanced lithium-ion battery electrodes, par- ticularly for increasingSolution-Grown Silicon Nanowires for Lithium-Ion Battery Anodes Candace K. Chan, Reken N. Patel storage capacity (theoretical values of 4200 vs 372 mAh/g for graphite). How- ever, the insertion

Cui, Yi

417

Status and Future of Silicon Photovoltaics Presented at: Renewable energies in the service of humanity: the  

E-Print Network (OSTI)

Shortage Excess Capacity 81% Progress Ratio Historical Module Price Experience Curve #12;Solar PV History companies Oil companies Japanese companies Japanese roof program German FIT #12;0,60 6,00 60,00 1 10 100 1000 10000 100000 ModulePrice(2010$/W) Cumulative Production (MW) 1979 $33.69/W 2012 $0.85/W Silicon

Canet, Léonie

418

Thermal Conductance of Thin Silicon Nanowires  

Science Journals Connector (OSTI)

The thermal conductance of individual single crystalline silicon nanowires with diameters less than 30 nm has been measured from 20 to 100 K. The observed thermal conductance shows unusual linear temperature dependence at low temperatures, as opposed to the T3 dependence predicted by the conventional phonon transport model. In contrast to previous models, the present study suggests that phonon-boundary scattering is highly frequency dependent, and ranges from nearly ballistic to completely diffusive, which can explain the unexpected linear temperature dependence.

Renkun Chen, Allon I. Hochbaum, Padraig Murphy, Joel Moore, Peidong Yang, and Arun Majumdar

2008-09-02T23:59:59.000Z

419

Fabrication and properties of microporous silicon  

E-Print Network (OSTI)

Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

Shao, Jianzhong

1994-01-01T23:59:59.000Z

420

Deposition of amorphous silicon solar cells at high rates by glow discharge of disilane. Final subcontract report, January 1985-July 1986  

SciTech Connect

This report summarizes the results of recent a-Si:H thin-film photovoltaic (PV) materials research. The work reported here concerned the fabrication of a-Si:H solar cells at high deposition rates using disilane. This task required the construction of a new, dual-chamber deposition system to control the dopant profile between the heavily doped p-type layer and the undoped (intrinsic) layer in the solar cell structure. Conditions were sought that would produce high-quality films at a high deposition rate. Complete photovoltaic devices were fabricated. In disilane-deposited material, the optimum substrate temperature is much higher than in silane material, presumably because it is harder to eliminate the excess hydrogen in the former. The efficiency of the best disilane cell was about 7%, with an open-circuit voltage of 0.80 V, a short-circuit current density of 14.7 mA cm/sup -2/ and a fill factor of 0.59. The most likely area for improvement is in the voltage, where values as high as 0.9 V should be possible with careful adjustment of the cell structure.

Vanier, P.E.

1986-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Silicon Photonic Components and Networks  

Science Journals Connector (OSTI)

Significant progress in silicon photonics has led to flattop filters, polarization independence, low power modulators and switches, and low dark current germanium detectors. Future...

Watts, Michael

422

Heterojunction Silicon Microwire Solar Cells  

Science Journals Connector (OSTI)

Heterojunction Silicon Microwire Solar Cells ... § Center for Advanced Photovoltaic Devices and Systems, University of Waterloo, 200 University Ave W, Waterloo, Ontario N2L 3G1, Canada ...

Majid Gharghi; Ehsanollah Fathi; Boubacar Kante; Siva Sivoththaman; Xiang Zhang

2012-11-21T23:59:59.000Z

423

High-Rate, High-Capacity Binder-Free Electrode  

NLE Websites -- All DOE Office Websites (Extended Search)

PCT: 09-41 Binderfree electrode 4 Why it is better than other technologies Carbon Nanotubes Composite Materials C. Ban, Z. Wu, LChen, Y. Yan and A.C. Dillon Adv. Mat., 2010...

424

Developing High Capacity, Long Life, and High Power Anodes  

Energy.gov (U.S. Department of Energy (DOE))

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

425

Capacity Allocation with Competitive Retailers Masabumi Furuhata  

E-Print Network (OSTI)

to uncertainty of market demands, costly capacity construction and time consuming capacity expansion. This makes the market to be unstable and malfunc- tioning. Such a problem is known as the capacity allocation investigate the properties of capacity allocation mechanisms for the markets where a sin- gle supplier

Zhang, Dongmo

426

Temperature Dependence of the EUV Responsivity of Silicon Photodiodes  

SciTech Connect

Responsivity of silicon photodiodes was measured from -100 C to +50 C in the 3 to 250 nm wavelength range using synchrotron and laboratory radiation sources. Two types of silicon photodiodes were studied, the AXUV series having a thin nitrided silicon dioxide surface layer and the SXUV series having a thin metal silicide surface layer. Depending on the wavelength, the responsivity increases with temperature with the rates 0.013%/C to 0.053%/C for the AXUV photodiode and 0.020%/C to 0.084%/C for the SXUV photodiode. The increase in responsivity is consistent with the decrease in the silicon bandgap energy which causes a decrease in the pair creation energy. These results are particularly important for dose measurement in extreme ultraviolet (EUV) lithography steppers and sources since the detector temperature often increases because of the high EUV intensities involved.

Kjornrattanawanich,B.; Korde, R.; Boyer, C.; Holland, G.; Seely, J.

2006-01-01T23:59:59.000Z

427

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

SciTech Connect

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

428

Nanoscale Engineering Of Radiation Tolerant Silicon Carbide....  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Of Radiation Tolerant Silicon Carbide. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide. Abstract: Radiation tolerance is determined by how effectively the...

429

AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION  

E-Print Network (OSTI)

fabricated one and two cell, amorphous silicon based mini-modules encapsulated with a modern silicone. The first module consisted of a single cell with a current collecting grid and bus bars on two sides of the cell. The current collecting grid used a spacing of 1 cm. 250 µm diameter tinned copper wire was used

Deng, Xunming

430

California: Conducting Polymer Binder Boosts Storage Capacity, Wins R&D 100 Award  

Office of Energy Efficiency and Renewable Energy (EERE)

Working with Nextval, Inc., Lawrence Berkeley National Laboratory (LBNL) developed a Conducting Polymer Binder for high-capacity lithium-ion batteries.

431

OpenEI - Electric Capacity  

Open Energy Info (EERE)

New Zealand Energy New Zealand Energy Outlook (2010): Electricity and Generation Capacity http://en.openei.org/datasets/node/357 The New Zealand Ministry of Economic Development publishes an annual Energy Outlook, which presents projections of New Zealand's future energy supply, demand, prices and greenhouse gas emissions. The principle aim of these projections is to inform the national energy debate. Included here are the model results for electricity and generation capacity. The spreadsheet provides an interactive tool for selecting which model results to view, and which scenarios to evaluate; full model results for each scenario are also included.

License

432

Recent developments in silicon calorimetry  

SciTech Connect

We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC.

Brau, J.E.

1990-11-01T23:59:59.000Z

433

Development efforts on silicon solar cells  

SciTech Connect

This report presents a summary of the major results from the silicon high-concentration solar cell program at Stanford University from the period 1983--1990. Following a detailed design study, efforts were focused upon experimental verification of the modeled results that predicted 28% efficiencies for a new 500X concentrator solar cell design. A history of the research progress is given detailing the critical experiments that enabled the demonstration of 19.6% cells in 1983, then subsequent improvements culminating in efficiencies over 28% by 1987. In addition to laboratory efficiency improvements, the report details advances in the understanding of the fundamental device physics and modeling of silicon solar cell operation. The latter stages of the program included the development of module-ready cells in large quantity for the EPRI prototype 500X concentrator modules. Several of these 48-cell modules are currently in the field under test.

Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (United States))

1992-02-01T23:59:59.000Z

434

Structural relaxation of vacancies in amorphous silicon  

SciTech Connect

The authors have studied the structural relaxation of vacancies in amorphous silicon (a-Si) using a tight-binding molecular-dynamics method. The most significant difference between vacancies in a-Si and those in crystalline silicon (c-Si) is that the deep gap states do not show up in a-Si. This difference is explained through the unusual behavior of the structural relaxation near the vacancies in a-Si, which enhances the sp{sup 2} + p bonding near the band edges. They have also observed that the vacancies do not migrate below 450 K although some of them can still be annihilated, particularly at high defect density due to large structural relaxation.

Kim, E.; Lee, Y.H.; Chen, C.; Pang, T.

1997-07-01T23:59:59.000Z

435

Bonding defects in hydrogenated amorphous silicon  

SciTech Connect

A mechanism for charged-carrier-trapping-induced defect metastability in hydrogenated amorphous silicon (a-Si:H) and in hydrogenated amorphous silicon alloys containing relatively high concentrations of oxygen and/or nitrogen atoms (a-Si:X:H, X = O or N) is described. The experimental results that identified this defect metastability mechanism were (i) differences in the Staebler-Wronski effect in a-Si:H and a-Si:N:H alloys prepared from N{sub 2} and NH{sub 3} source gases by remote plasma-enhanced chemical-vapor deposition, and (ii) differences in defect generation at N-atom terminated Si-SiO{sub 2} interfaces prepared from NH{sub 3} and N{sub 2}O.

Lucovsky, G.; Yang, H. [North Carolina State Univ., Raleigh, NC (United States)

1996-12-31T23:59:59.000Z

436

The CDF Run IIb Silicon Detector  

SciTech Connect

Fermilab plans to deliver 5-15 fb{sup -1} of integrated luminosity to the CDF and D0 experiments. The current inner silicon detectors at CDF (SVXIIa and L00) will not tolerate the radiation dose associated with high luminosity running and will need to be replaced. A new readout chip (SVX4) has been designed in radiation-hard 0.25 {micro}m CMOS technology. Single sided sensors are arranged in a compact structure, called a stave, with integrated readout and cooling systems. This paper describes the general design of the Run IIb system, testing results of prototype electrical components (staves), and prototype silicon sensor performance before and after irradiation.

M. Aoki; N. Bacchetta; S. Behari et al.

2004-02-25T23:59:59.000Z

437

Coping with rivals’ absorptive capacity in innovation activities  

Science Journals Connector (OSTI)

Abstract Two factors jointly determine the likelihood of a firm?s competitors obtaining information on its intangible assets and using it to damage the firm?s innovation performance. Those factors are the absorptive capacity of the rival firm and the appropriability regime of the innovating firm. However, the precise roles of the two factors in affecting performance outcomes are not well documented. Furthermore, we lack knowledge of the interplay between an appropriability regime and absorptive capacity, although they clearly have the capacity to exert positive and negative effects both on each other and on innovativeness. This study presents findings derived from theoretical discussion and an empirical examination of 155 firms that suggest that while competitors’ absorptive capacity does not play a direct negative or positive role on the innovation performance of a firm, an appropriability regime exerts a strong positive influence. Nevertheless, high rival absorptive capacity is not without importance, since the significant interaction effects suggest that a strong appropriability regime has positive effects on innovation performance especially in the context of a rival having high absorptive capacity.

Pia Hurmelinna-Laukkanen; Heidi Olander

2014-01-01T23:59:59.000Z

438

Nitrogen expander cycles for large capacity liquefaction of natural gas  

SciTech Connect

Thermodynamic study is performed on nitrogen expander cycles for large capacity liquefaction of natural gas. In order to substantially increase the capacity, a Brayton refrigeration cycle with nitrogen expander was recently added to the cold end of the reputable propane pre-cooled mixed-refrigerant (C3-MR) process. Similar modifications with a nitrogen expander cycle are extensively investigated on a variety of cycle configurations. The existing and modified cycles are simulated with commercial process software (Aspen HYSYS) based on selected specifications. The results are compared in terms of thermodynamic efficiency, liquefaction capacity, and estimated size of heat exchangers. The combination of C3-MR with partial regeneration and pre-cooling of nitrogen expander cycle is recommended to have a great potential for high efficiency and large capacity.

Chang, Ho-Myung; Park, Jae Hoon; Gwak, Kyung Hyun [Hong Ik University, Department of Mechanical Engineering, Seoul, 121-791 (Korea, Republic of); Choe, Kun Hyung [Korea Gas Corporation, Incheon, 406-130 (Korea, Republic of)

2014-01-29T23:59:59.000Z

439

electricity generating capacity | OpenEI  

Open Energy Info (EERE)

generating capacity generating capacity Dataset Summary Description The New Zealand Ministry of Economic Development publishes energy data including many datasets related to electricity. Included here are three electricity generating capacity datasets: annual operational electricity generation capacity by plant type (1975 - 2009); estimated generating capacity by fuel type for North Island, South Island and New Zealand (2009); and information on generating plants (plant type, name, owner, commissioned date, and capacity), as of December 2009. Source New Zealand Ministry of Economic Development Date Released Unknown Date Updated July 03rd, 2009 (5 years ago) Keywords biomass coal Electric Capacity electricity generating capacity geothermal Hydro Natural Gas wind Data application/vnd.ms-excel icon Operational Electricity Generation Capacity by Plant Type (xls, 42.5 KiB)

440

Philips Lumileds Is Exploring the Use of Silicon Substrates to Lower the Cost of LEDs  

Energy.gov (U.S. Department of Energy (DOE))

With the help of DOE funding, Philips Lumileds is exploring the use of nitride epitaxy on 150mm silicon substrates to produce low-cost, warm-white, high-performance general-illumination LEDs. Most LEDs are made with C-plane sapphire substrates, but silicon—at roughly half a penny per square millimeter—is much cheaper, and it's also easier to obtain. Philips Lumileds is attempting to adapt the use of silicon to the manufacture of LEDs, drawing upon the knowledge base and depreciated equipment of the computer industry, which has been using silicon substrates for decades.

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Method for forming silicon on a glass substrate  

DOE Patents (OSTI)

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

McCarthy, A.M.

1995-03-07T23:59:59.000Z

442

Silicon carbide process development for microengine applications : residual stress control and microfabrication  

E-Print Network (OSTI)

The high power densities expected for the MIT microengine (silicon MEMS-based micro-gas turbine generator) require the turbine and compressor spool to rotate at a very high speed at elevated temperatures (1300 to 1700 K). ...

Choi, Dongwon, 1973-

2004-01-01T23:59:59.000Z

443

Deposition of device quality low H content, amorphous silicon films  

DOE Patents (OSTI)

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

1995-03-14T23:59:59.000Z

444

Microstructure and properties of copper thin films on silicon substrates  

E-Print Network (OSTI)

copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown...

Jain, Vibhor Vinodkumar

2009-05-15T23:59:59.000Z

445

Silicon Microwire Arrays for Solar Energy-Conversion Applications  

Science Journals Connector (OSTI)

Silicon Microwire Arrays for Solar Energy-Conversion Applications ... The Si MW array geometry allows for efficient collection of photogenerated carriers from impure materials that have short minority-carrier diffusion lengths while simultaneously allowing for high optical absorption and high external quantum yields for charge-carrier collection. ...

Emily L. Warren; Harry A. Atwater; Nathan S. Lewis

2013-12-09T23:59:59.000Z

446

Crystalline silicon growth in nickel/a-silicon bilayer  

SciTech Connect

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 Degree-Sign C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

Mohiddon, Md Ahamad; Naidu, K. Lakshun [School of Physics, University of Hyderabad, Hyderabad-500046 (India) and Department of Physics, University of Trento, 38123 POVO (Trento) (Italy); Dalba, G. [Department of Physics, University of Trento, 38123 POVO (Trento) (Italy); Rocca, F. [IFN-CNR, Institute for Photonics and Nanotechnologies, Unit FBK-Photonics of Trento, 38123, Trento (Italy); Krishna, M. Ghanashyam [School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2013-02-05T23:59:59.000Z

447

1992 Annual Capacity Report. Revision 1  

SciTech Connect

The Standard Contract for Disposal of Spent Nuclear Fuel and/or High-Level Radioactive Waste (10 CFR Part 961) requires the Department of Energy (DOE) to issue an Annual Capacity Report (ACR) for planning purposes. This report is the fifth in the series published by DOE. In May 1993, DOE published the 1992 Acceptance Priority Ranking (APR) that established the order in which DOE will allocate projected acceptance capacity. As required by the Standard Contract, the acceptance priority ranking is based on the date the spent nuclear fuel (SNF) was permanently discharged, with the owners of the oldest SNF, on an industry-wide basis, given the highest priority. The 1992 ACR applies the projected waste acceptance rates in Table 2.1 to the 1992 APR, resulting in individual allocations for the owners and generators of the SNF. These allocations are listed in detail in the Appendix, and summarized in Table 3.1. The projected waste acceptance rates for SNF presented in Table 2.1 are nominal and assume a site for a Monitored Retrievable Storage (MRS) facility will be obtained; the facility will initiate operations in 1998; and the statutory linkages between the MRS facility and the repository set forth in the Nuclear Waste Policy Act of 1982, as amended (NWPA), will be modified. During the first ten years following projected commencement of Civilian Radioactive Waste Management System (CRWMS) operation, the total quantity of SNF that could be accepted is projected to be 8,200 metric tons of uranium (MTU). This is consistent with the storage capacity licensing conditions imposed on an MRS facility by the NWPA. The annual acceptance rates provide an approximation of the system throughput and are subject to change as the program progresses.

Not Available

1993-05-01T23:59:59.000Z

448

Phonon Heat Conduction in Corrugated Silicon Nanowires Below the Casimir Limit Christophe Blanc,1  

E-Print Network (OSTI)

very low thermal conductances of highly rough silicon nanowires [7, 18], far below the amorphous limit, 2013) The thermal conductance of straight and corrugated monocrystalline silicon nanowires has been of nanostructured materials or low dimen- sional materials has attracted growing interest [1­4], es- pecially

Paris-Sud XI, Université de

449

Visualization and Modeling of Polystyrol Colloid Transport in a Silicon Micromodel  

Science Journals Connector (OSTI)

...Hitachi HL-700F, Hitachi High-Technologies Corp, Tokyo). The pattern was etched into a silicon wafer in a class 10 cleanroom environment. All silicon wafers were 10.56 cm in diameter, 500 mum thick, single sided polished, 4 to 6 , N 1,0...

Thomas Baumann; Charles J. Werth

450

Sputtered pin amorphous silicon semi-conductor device and method therefor  

DOE Patents (OSTI)

A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

Moustakas, Theodore D. (Berkeley Heights, NJ); Friedman, Robert A. (Milford, NJ)

1983-11-22T23:59:59.000Z

451

Structural changes induced by heavy ion irradiation in titanium silicon carbide J.C. Nappa,  

E-Print Network (OSTI)

Structural changes induced by heavy ion irradiation in titanium silicon carbide Authors J.C. Nappéa, UMR 8609, Bât. 108, 91405 Orsay, France ABSTRACT Carbide-type ceramics, which have remarkable at high temperature. The MAX phases, and more particularly titanium silicon carbide, are distinguished

Paris-Sud XI, Université de

452

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature  

E-Print Network (OSTI)

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature Roberto Verucchi carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting Si or plastics that cannot withstand high temperatures. Silicon carbide (SiC) has unique properties that make

Alfè, Dario

453

Modification of polycrystalline silicon as efficient anode for active-matrix organic light-emitting diodes  

E-Print Network (OSTI)

Modification of polycrystalline silicon as efficient anode for active- matrix organic light silicon (p-Si) on the performance of p-Si anode OLEDs have been studied. UV-ozone treatment of p. By depositing ultra-thin high work function metal oxides, such as V2O5 and MoO3, on p-Si anode, the performance

454

InP-based waveguide photodiodes heterogeneously integrated on silicon-on-  

E-Print Network (OSTI)

InP-based waveguide photodiodes heterogeneously integrated on silicon-on- insulator for photonic@virginia.edu Abstract: High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation

Bowers, John

455

Strain compensation in boron-indium coimplanted laser thermal processed silicon  

E-Print Network (OSTI)

Strain compensation in boron-indium coimplanted laser thermal processed silicon Mark H. Clarka Strain in B-implanted laser thermal processed LTP silicon is reduced by coimplantation of In. Strain in the codoped layer is calculated using lattice constants measured by high-resolution x-ray diffraction

Florida, University of

456

Charge collection measurements with p-type Magnetic Czochralski Silicon single pad detectors  

E-Print Network (OSTI)

need for radiation-hard tracking detectors in forthcoming elementary particle physics experiments [3]. Silicon radiation detectors have so far mainly produced from n-type high resistivity silicon the inversion fluence the detector must thus be over-depleted to extend the electric field throughout the active

California at Santa Cruz, University of

457

[working paper] Regional Economic Capacity, Economic Shocks,  

E-Print Network (OSTI)

1 [working paper] Regional Economic Capacity, Economic Shocks, and Economic that makes them more likely to resist economic shocks or to recover quickly from of resilience capacity developed by Foster (2012) is related to economic resilience

Sekhon, Jasjeet S.

458

Fair capacity sharing of multiple aperiodic servers  

E-Print Network (OSTI)

For handling multiple aperiodic tasks with different temporal requirements, multiple aperiodic servers are used. Since capacity is partitioned statically among the multiple servers, they suffer from heavy capacity exhaustions. Bernat and Burns...

Melapudi, Vinod Reddy

2002-01-01T23:59:59.000Z

459

Hydrogenated amorphous silicon-germanium alloys  

SciTech Connect

This report describes the effects of the germanium fraction in hydrogenated amorphous silicon-germanium alloys on various parameters, especially those that are indicators of film quality, and the impact of deposition methods, feedgas mixtures, and other deposition parameters on a SiGe:H and a-SiGe:H:F film characteristics and quality. Literature data show the relationship between germanium content, hydrogen content, deposition method (various glow discharges and CVD), feedgas lmixture, and other parameters and properties, such as optical band gap, dark and photoconductivities, photosensitivity, activation energy, Urbach parameter, and spin density. Some of these are convenient quality indicators; another is the absence of microstructure. Examining RF glow discharge with both a diode and triode geometry, DC proximity glow discharge, microwave glow discharge, and photo-CVD, using gas mixtures such as hydrogen-diluted and undiluted mixtures of silane/germane, disilane/germane, silane/germaniumtetrafluoride, and others, it was observed that hydrogen dilution (or inert gas dilution) is essential in achieving high photosensitivity in silicon-germanium alloys (in contradistinction to amorphous hydrogenated silicon). Hydrogen dilution results in a higher photosensitivity than do undiluted gas mixtures. 81 refs., 42 figs., 7 tabs.

Luft, W.

1988-02-01T23:59:59.000Z

460

Fabrication of porous silicon membranes  

E-Print Network (OSTI)

. In step 1, the surface of silicon is covered with fluorine ions. In step 2, when an electric field is applied across the interface, holes move towards the surface. In step 3, some of the holes are trapped at the surface, and they weaken the silicon...-silicon bonds. In step 4, thermal energy swings away the Si-F groups exposing the holes. In step 5, fluorine ions occupy the holes and release their charges. In the dissolution, Step 3 through Step 5 is repeated, and SiFz is removed from the reacting site...

Yue, Wing Kong

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Can Science and Technology Capacity be Measured?  

E-Print Network (OSTI)

The ability of a nation to participate in the global knowledge economy depends to some extent on its capacities in science and technology. In an effort to assess the capacity of different countries in science and technology, this article updates a classification scheme developed by RAND to measure science and technology capacity for 150 countries of the world.

Wagner, Caroline S; Dutta, Arindum

2015-01-01T23:59:59.000Z

462

Internal Markets for Supply Chain Capacity Allocation  

E-Print Network (OSTI)

Internal Markets for Supply Chain Capacity Allocation David McAdams and Thomas W. Malone Sloan David McAdams & Thomas Malone #12;Internal Markets for Supply Chain Capacity Allocation David Mc ("internal markets") to help allocate manufacturing capacity and determine the prices, delivery dates

463

Rheology of silicon carbide/vinyl ester nanocomposites  

E-Print Network (OSTI)

New York, 1999. SILICON CARBIDE/VINYL ESTER NANOCOMPOSITESRheology of Silicon Carbide/Vinyl Ester NanocompositesABSTRACT: Silicon carbide (SiC) nanoparticles with no

Yong, Virginia; Hahn, H. Thomas

2006-01-01T23:59:59.000Z

464

Silicon nanoparticle and carbon nanotube loaded carbon nanofibers for use in lithium-ion battery anodes  

Science Journals Connector (OSTI)

Abstract In this report, we introduce electrospun silicon nanoparticle and carbon nanotube loaded carbon nanofibers (SCNFs) as anode materials in lithium-ion batteries (LIBs). The one-dimensional structure of electrospun nanofibers provides porosity for the anode material. Carbon nanotubes (CNTs) in the electrospun fibers reduce the volume expansion of silicon nanoparticles (SiNPs) and improve mechanical stability of the electrode. Both \\{CNTs\\} and carbon nanofibers enhance electronic conduction by connecting SiNPs in \\{SCNFs\\} for electrode reactions. These contribute to improved electrochemical performance of SCNF anode-based \\{LIBs\\} resulting in the enhancement of capacity and cycling ability.

Nguyen Trung Hieu; Jungdon Suk; Dong Wook Kim; Ok Hee Chung; Jun Seo Park; Yongku Kang

2014-01-01T23:59:59.000Z

465

Optically initiated silicon carbide high voltage switch  

DOE Patents (OSTI)

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders; David M. (Livermore, CA)

2011-02-22T23:59:59.000Z

466

Reaction studies of hot silicon, germanium and carbon atoms  

SciTech Connect

The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs.

Gaspar, P.P.

1990-11-01T23:59:59.000Z

467

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006  

SciTech Connect

The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

Wohlgemuth, J.; Narayanan, M.

2006-07-01T23:59:59.000Z

468

DOE Transmission Capacity Report | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Transmission Capacity Report Transmission Capacity Report DOE Transmission Capacity Report DOE Transmission Capacity Report: Transmission lines, substations, circuit breakers, capacitors, and other equipment provide more than just a highway to deliver energy and power from generating units to distribution systems. Transmission systems both complement and substitute for generation. Transmission generally enhances reliability; lowers the cost of electricity delivered to consumers; limits the ability of generators to exercise market power; and provides flexibility to protect against uncertainties about future fuel prices, load growth, generator construction, and other factors affecting the electric system. DOE Transmission Capacity Report More Documents & Publications Report to Congress:Impacts of the Federal Energy Regulatory Commission's

469

Silicon Carbide, SiC  

Science Journals Connector (OSTI)

Silicon carbide occurring naturally as hexagonal crystals and associated with diamond, graphite, and amorphous carbon was first reported in 1904/05 by Moissan as a component of the hydrochloric acid insoluble ...

Vera Haase; Gerhard Kirschstein; Hildegard List; Sigrid Ruprecht…

1985-01-01T23:59:59.000Z

470

Results from a beam test of silicon strip sensors manufactured by Infineon Technologies AG  

E-Print Network (OSTI)

Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors were capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European-based semiconductor manufacturer Infineon Technologies AG (Infineon) the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) developed planar silicon strip sensors in p-on-n technology. This work presents the first results from a beam test of strip sensors manufactured by Infineon.

Dragicevic, M; Bartl, U; Bergauer, T; Gamerith, S; Hacker, J; König, A; Kröner, F; Kucher, E; Moser, J; Neidhart, T; Schulze, H-J; Schustereder, W; Treberspurg, W; Wübben, T

2014-01-01T23:59:59.000Z

471

Capacity Value of Concentrating Solar Power Plants  

SciTech Connect

This study estimates the capacity value of a concentrating solar power (CSP) plant at a variety of locations within the western United States. This is done by optimizing the operation of the CSP plant and by using the effective load carrying capability (ELCC) metric, which is a standard reliability-based capacity value estimation technique. Although the ELCC metric is the most accurate estimation technique, we show that a simpler capacity-factor-based approximation method can closely estimate the ELCC value. Without storage, the capacity value of CSP plants varies widely depending on the year and solar multiple. The average capacity value of plants evaluated ranged from 45%?90% with a solar multiple range of 1.0-1.5. When introducing thermal energy storage (TES), the capacity value of the CSP plant is more difficult to estimate since one must account for energy in storage. We apply a capacity-factor-based technique under two different market settings: an energy-only market and an energy and capacity market. Our results show that adding TES to a CSP plant can increase its capacity value significantly at all of the locations. Adding a single hour of TES significantly increases the capacity value above the no-TES case, and with four hours of storage or more, the average capacity value at all locations exceeds 90%.

Madaeni, S. H.; Sioshansi, R.; Denholm, P.

2011-06-01T23:59:59.000Z

472

Cryogenic silicon surface ion trap  

E-Print Network (OSTI)

Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\\dot{\\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $\\mu$m. These results open many new avenues to arrays of micro-fabricated ion traps.

Michael Niedermayr; Kirill Lakhmanskiy; Muir Kumph; Stefan Partel; Johannes Edlinger; Michael Brownnutt; Rainer Blatt

2014-03-20T23:59:59.000Z

473

Property:InstalledCapacity | Open Energy Information  

Open Energy Info (EERE)

InstalledCapacity InstalledCapacity Jump to: navigation, search Property Name InstalledCapacity Property Type Quantity Description Installed Capacity (MW) or also known as Total Generator Nameplate Capacity (Rated Power) Use this property to express potential electric energy generation, such as Nameplate Capacity. The default unit is megawatts (MW). For spatial capacity, use property Volume. Acceptable units (and their conversions) are: 1 MW,MWe,megawatt,Megawatt,MegaWatt,MEGAWATT,megawatts,Megawatt,MegaWatts,MEGAWATT,MEGAWATTS 1000 kW,kWe,KW,kilowatt,KiloWatt,KILOWATT,kilowatts,KiloWatts,KILOWATT,KILOWATTS 1000000 W,We,watt,watts,Watt,Watts,WATT,WATTS 1000000000 mW,milliwatt,milliwatts,MILLIWATT,MILLIWATTS 0.001 GW,gigawatt,gigawatts,Gigawatt,Gigawatts,GigaWatt,GigaWatts,GIGAWATT,GIGAWATTS

474

Mechanical Dissipation in Silicon Flexures  

E-Print Network (OSTI)

The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92um thick single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to phi = 4.4E-7.

S. Reid; G. Cagnoli; D. R. M. Crooks; J. Hough; P. Murray; S. Rowan; M. M. Fejer; R. Route; S. Zappe

2005-10-28T23:59:59.000Z

475

Amorphous Silicon Based Neutron Detector  

SciTech Connect

Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield using low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies developed here could be used to develop X-ray and neutron monitors that could be used in the future for security checks at the airports and other critical facilities. The project would lead to devices that could significantly enhance the performance of multi-billion dollar neutron source facilities in the US and bring our nation to the forefront of neutron beam sciences and technologies which have enormous impact to materials, life science and military research and applications.

Xu, Liwei

2004-12-12T23:59:59.000Z

476

Direct Production of Silicones From Sand  

SciTech Connect

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30T23:59:59.000Z

477

Antimony Induced Crystallization of Amorphous Silicon  

Science Journals Connector (OSTI)

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1?m were formed when the antimony layer was deposited by MBE (molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

Y. Wang; H.Z. Li; C.N. Yu; G.M. Wu; I. Gordon; P. Schattschneider; O. Van Der Biest

2007-01-01T23:59:59.000Z

478

Silicon point contact concentrator solar cells  

SciTech Connect

Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 micron thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/sq cm. Efficiency peaked at 23 percent at 11 W/sq cm measured at 22-25 C. Strategies for obtaining higher efficiencies with this solar cell design are discussed. 8 references.

Sinton, R.A.; Kwark, Y.; Swirhun, S.; Swanson, R.M.

1985-08-01T23:59:59.000Z

479

Vehicle Technologies Office Merit Review 2014: Studies on High...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Studies on High Capacity Cathodes for Advanced Lithium-ion Systems Vehicle Technologies Office Merit Review 2014: Studies on High Capacity Cathodes for Advanced Lithium-ion Systems...

480

TABLE 1. Nuclear Reactor, State, Type, Net Capacity, Generation...  

U.S. Energy Information Administration (EIA) Indexed Site

TABLE 1. Nuclear Reactor, State, Type, Net Capacity, Generation, and Capacity Factor " "PlantReactor Name","Generator ID","State","Type","2009 Summer Capacity"," 2010 Annual...

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Optical Damage Threshold of Silicon for Ultrafast Infrared Pulses  

SciTech Connect

While silicon has several properties making it an attractive material for structure-based laser-driven acceleration, its optical damage threshold, a key parameter for high-gradient acceleration, has been unknown. Here we present measurements of the optical damage threshold of crystalline silicon for ultrafast pulses in the mid-infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm extending longer toward the two-photon absorption threshold at around 2200 nm. We discuss the prevailing theories of ultrafast optical breakdown, describe the experimental setup and preliminary results, and propose a relevant performance parameter for candidate accelerator structures.

Cowan, B.; /SLAC

2006-09-07T23:59:59.000Z

482

Silicon infrared photodetector using sub-bandgap transitions  

E-Print Network (OSTI)

W) (mTorr) Gases flow rate (sccm) CF4 O2 Etched Depth ( nm )also etches silicon, a high CF4 flow rate condition (step1Step 2 Gas flow rate (sccm) CF4 O2 PDMS etching rate(nm/min)

Kim, HongKwon

2011-01-01T23:59:59.000Z

483

Resolution Studies on Silicon Strip Sensors with fine Pitch  

E-Print Network (OSTI)

In June 2008 single-sided silicon strip sensors with 50 $\\mu$m readout pitch were tested in a highly energetic pion beam at the SPS at CERN. The purpose of the test was to evaluate characteristic detector properties by varying the strip width and the number of intermediate strips. The experimental setup and first results for the spatial resolution are discussed.

S. Haensel; T. Bergauer; Z. Dolezal; M. Dragicevic; Z. Drasal; M. Friedl; J. Hrubec; C. Irmler; W. Kiesenhofer; M. Krammer; P. Kvasnicka

2009-01-30T23:59:59.000Z

484

CURRENT NEWS Sandwich Solar Cells May See Off Silicon  

E-Print Network (OSTI)

CURRENT NEWS Sandwich Solar Cells May See Off Silicon May 24, 2010 A new manufacturing technique of devices using GaAs chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cells. The authors also provide a detailed cost comparison. Another advantage of the multilayer

Rogers, John A.

485

Laser beam reflection from shock waves in xenon and silicon  

Science Journals Connector (OSTI)

The experimental results of the laser beam (?=1 06 ?m) reflection from shock waves in xenon at P=1 6+17 GPa and in silicon at an insulator?metal transition region at P=10+46 GPa are presented. Reflection characteristics and possibility of the estimation of the electron properties of the substance under high pressures are discussed.

V. B. Mintsev; Yu. B. Zaporoghets; V. E. Fortov

1990-01-01T23:59:59.000Z

486

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network (OSTI)

;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature & Metal Closeup 14 Front and Back of Screen Printed Solar Cell 15 Crystallization Furnace for Ingot1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

Kaiser, Todd J.

487

Distribution of radiative crystal imperfections through a silicon ingot  

SciTech Connect

Crystal imperfections limit the efficiency of multicrystalline silicon solar cells. Recombination through traps is more prominent in areas with high density of crystal imperfections. A method to visualize the distribution of radiative emission from Shockley Read Hall recombination in silicon is demonstrated. We use hyperspectral photoluminescence, a fast non-destructive method, to image radiatively active recombination processes on a set of 50 wafers through a silicon block. The defect related emission lines D1 and D2 may be detected together or alone. The D3 and D4 seem to be correlated if we assume that an emission at the similar energy as D3 (VID3) is caused by a separate mechanism. The content of interstitial iron (Fe{sub i}) correlates with D4. This method yields a spectral map of the inter band gap transitions, which opens up for a new way to characterize mechanisms related to loss of efficiency for solar cells processed from the block.

Flø, A., E-mail: andreas.flo@umb.no; Burud, I.; Kvaal, K.; Olsen, E. [Norwegian University of Life Sciences, Dept. Mathematical Sciences and Technology, P.O. Box 5003, 1432 Ås (Norway)] [Norwegian University of Life Sciences, Dept. Mathematical Sciences and Technology, P.O. Box 5003, 1432 Ås (Norway); Søndenå, R. [Institute for Energy Technology, Department of Solar Energy, P.O. Box 40, 2027 Kjeller (Norway)] [Institute for Energy Technology, Department of Solar Energy, P.O. Box 40, 2027 Kjeller (Norway)

2013-11-15T23:59:59.000Z

488

Protective coating for alumina-silicon carbide whisker composites  

DOE Patents (OSTI)

Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

Tiegs, Terry N. (Lenoir City, TN)

1989-01-01T23:59:59.000Z

489

Definition: Deferred Generation Capacity Investments | Open Energy  

Open Energy Info (EERE)

Generation Capacity Investments Generation Capacity Investments Utilities and grid operators ensure that generation capacity can serve the maximum amount of load that planning and operations forecasts indicate. The trouble is, this capacity is only required for very short periods each year, when demand peaks. Reducing peak demand and flattening the load curve should reduce the generation capacity required to service load and lead to cheaper electricity for customers.[1] Related Terms load, electricity generation, peak demand, smart grid References ↑ SmartGrid.gov 'Description of Benefits' An inl LikeLike UnlikeLike You like this.Sign Up to see what your friends like. ine Glossary Definition Retrieved from "http://en.openei.org/w/index.php?title=Definition:Deferred_Generation_Capacity_Investments&oldid=50257

490

Installed Geothermal Capacity | Open Energy Information  

Open Energy Info (EERE)

Geothermal Capacity Geothermal Capacity Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Print PDF Installed Geothermal Capacity International Market Map of U.S. Geothermal Power Plants List of U.S. Geothermal Power Plants Throughout the world geothermal energy is looked at as a potential source of renewable base-load power. As of 2005 there was 8,933 MW of installed power capacity within 24 countries. The International Geothermal Association (IGA) reported 55,709 GWh per year of geothermal electricity. The generation from 2005 to 2010 increased to 67,246 GWh, representing a 20% increase in the 5 year period. The IGA has projected that by 2015 the new installed capacity will reach 18,500 MW, nearly 10,000 MW greater than 2005. [1] Countries with the greatest increase in installed capacity (MW) between

491

Property:PlannedCapacity | Open Energy Information  

Open Energy Info (EERE)

PlannedCapacity PlannedCapacity Jump to: navigation, search Property Name PlannedCapacity Property Type Quantity Description The total planned capacity for a given area, region or project. Use this property to express potential electric energy generation, such as Nameplate Capacity. The default unit is megawatts (MW). For spatial capacity, use property Volume. Acceptable units (and their conversions) are: 1 MW,MWe,megawatt,Megawatt,MegaWatt,MEGAWATT,megawatts,Megawatt,MegaWatts,MEGAWATT,MEGAWATTS 1000 kW,kWe,KW,kilowatt,KiloWatt,KILOWATT,kilowatts,KiloWatts,KILOWATT,KILOWATTS 1000000 W,We,watt,watts,Watt,Watts,WATT,WATTS 1000000000 mW,milliwatt,milliwatts,MILLIWATT,MILLIWATTS 0.001 GW,gigawatt,gigawatts,Gigawatt,Gigawatts,GigaWatt,GigaWatts,GIGAWATT,GIGAWATTS 0.000001 TW,terawatt,terawatts,Terawatt,Terawatts,TeraWatt,TeraWatts,TERAWATT,TERAWATTS

492

Property:MeanCapacity | Open Energy Information  

Open Energy Info (EERE)

MeanCapacity MeanCapacity Jump to: navigation, search Property Name MeanCapacity Property Type Quantity Description Mean capacity potential at location based on the USGS 2008 Geothermal Resource Assessment if the United States Use this property to express potential electric energy generation, such as Nameplate Capacity. The default unit is megawatts (MW). For spatial capacity, use property Volume. Acceptable units (and their conversions) are: 1 MW,MWe,megawatt,Megawatt,MegaWatt,MEGAWATT,megawatts,Megawatt,MegaWatts,MEGAWATT,MEGAWATTS 1000 kW,kWe,KW,kilowatt,KiloWatt,KILOWATT,kilowatts,KiloWatts,KILOWATT,KILOWATTS 1000000 W,We,watt,watts,Watt,Watts,WATT,WATTS 1000000000 mW,milliwatt,milliwatts,MILLIWATT,MILLIWATTS 0.001 GW,gigawatt,gigawatts,Gigawatt,Gigawatts,GigaWatt,GigaWatts,GIGAWATT,GIGAWATTS

493

Working and Net Available Shell Storage Capacity  

U.S. Energy Information Administration (EIA) Indexed Site

Working and Net Available Shell Storage Capacity Working and Net Available Shell Storage Capacity With Data for September 2013 | Release Date: November 27, 2013 | Next Release Date: May 29, 2013 Previous Issues Year: September 2013 March 2013 September 2012 March 2012 September 2011 March 2011 September 2010 Go Containing storage capacity data for crude oil, petroleum products, and selected biofuels. The report includes tables detailing working and net available shell storage capacity by type of facility, product, and Petroleum Administration for Defense District (PAD District). Net available shell storage capacity is broken down further to show the percent for exclusive use by facility operators and the percent leased to others. Crude oil storage capacity data are also provided for Cushing, Oklahoma, an

494

Definition: Nameplate Capacity | Open Energy Information  

Open Energy Info (EERE)

Definition Definition Edit with form History Facebook icon Twitter icon » Definition: Nameplate Capacity Jump to: navigation, search Dictionary.png Nameplate Capacity The maximum amount of electric energy that a generator can produce under specific conditions, as rated by the manufacturer. Generator nameplate capacity is expressed in some multiple of watts such as megawatts (MW), as indicated on a nameplate that is physically attached to the generator.[1] View on Wikipedia Wikipedia Definition Also Known As Capacity Related Terms electricity generation, power References ↑ http://www.nrc.gov/reading-rm/basic-ref/glossary/generator-nameplate-capacity.html Retr LikeLike UnlikeLike You like this.Sign Up to see what your friends like. ieved from "http://en.openei.org/w/index.php?title=Definition:Nameplate_Capacity&oldid=480378"

495

EEI/DOE Transmission Capacity Report  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

TRANSMISSION CAPACITY: TRANSMISSION CAPACITY: PRESENT STATUS AND FUTURE PROSPECTS Eric Hirst Consulting in Electric-Industry Restructuring Bellingham, Washington June 2004 Prepared for Energy Delivery Group Edison Electric Institute Washington, DC Russell Tucker, Project Manager and Office of Electric Transmission and Distribution U.S. Department of Energy Washington, DC Larry Mansueti, Project Manager ii iii CONTENTS Page SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v LIST OF ACRONYMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii 1. INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2. TRANSMISSION CAPACITY: DATA AND PROJECTIONS . . . . . . . . . . . . . . . . . . . 5 HISTORICAL DATA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 CURRENT CONDITIONS . . . . . . .

496

Quantum capacity of channel with thermal noise  

E-Print Network (OSTI)

The quantum capacity of thermal noise channel is studied. The extremal input state is obtained at the postulation that the coherent information is convex or concave at its vicinity. When the input energy tends to infinitive, it is verified by perturbation theory that the coherent information reaches its maximum at the product of identical thermal state input. The quantum capacity is obtained for lower noise channel and it is equal the one shot capacity.

Xiao-yu Chen

2006-02-11T23:59:59.000Z

497

Plasma synthesis of single-crystal silicon nanoparticles for novel electronic device applications  

Science Journals Connector (OSTI)

Single-crystal nanoparticles of silicon, several tens of nanometres in diameter, may be suitable as building blocks for single-nanoparticle electronic devices. Previous studies of nanoparticles produced in low-pressure plasmas have demonstrated the synthesis of nanocrystals 2–10?nm diameter but larger particles were amorphous or polycrystalline. This work reports the use of a constricted, filamentary capacitively coupled low-pressure plasma to produce single-crystal silicon nanoparticles with diameters between 20 and 80?nm. Particles are highly oriented with predominantly cubic shape. The particle size distribution is rather monodisperse. Electron microscopy studies confirm that the nanoparticles are highly oriented diamond-cubic silicon.

Ameya Bapat; Curtis Anderson; Christopher R Perrey; C Barry Carter; Stephen A Campbell; Uwe Kortshagen

2004-01-01T23:59:59.000Z