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Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Carbon-Silicon Core-Shell Nanowires as High Capacity Electrode for Lithium  

E-Print Network (OSTI)

Carbon-Silicon Core-Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries Li lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core during lithium cycling and can function as a mechanical support and an efficient electron conducting

Cui, Yi

2

Development of a process for high capacity arc heater production of silicon for solar arrays. Low-cost solar array project, silicon materials task. Quarterly technical report, January--March 1978  

DOE Green Energy (OSTI)

A program has been established at Westinghouse to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. Preliminary technical evaluations and economic projections indicate not only that this process appears to be feasible, but that it also has the advantages of rapid, high capacity production of good quality molten silicon at a nominal cost. The program consists of a four-phase effort directed to the development and implementation of this technology. The initial phase of the program, Phase I, was an eleven-month study funded by JPL which was completed in September, 1977. Phase I was defined as a comprehensive feasibility and engineering review of the reaction process, and a formulation of the design for a test system to experimentally verify the high temperature reaction. Phase II, currently underway, involves a multi-task approach including (1) a detailed engineering analysis of the entire process; (2) design, fabrication, and assembly of the experimental system; (3) experimental testing of the reduction reaction to produce silicon and (4) complementary research programs to augment the experimental system design. The Phase II effort was initiated in October, 1977, and work is described in detail on the various stages of this effort.

Reed, W.H.

1978-01-01T23:59:59.000Z

3

Development of a process for high capacity arc heater production of silicon for solar arrays. Low Cost Silicon Solar Array Project, Silicon Materials Task. Quarterly technical report, October--December 1977  

DOE Green Energy (OSTI)

A program has been established at Westinghouse to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. While the overall program objective is to produce 1000 metric tons of high quality silicon per year on a continuous basis, Phase I was defined as a comprehensive feasibility and engineering review of the reaction process, and a formulation of the design for a test system to experimentally verify the high temperature reaction. Phase II, currently underway, involves a multi-task approach including (1) a detailed engineering analysis of the entire process; (2) design, fabrication, and assembly of the experimental system; (3) experimental testing of the reduction reaction to produce silicon; and (4) complementary research programs to augment the experimental system design. Progress in each of these areas is detailed.

Reed, W.H.

1977-01-01T23:59:59.000Z

4

High Capacity Immobilized Amine Sorbents  

NLE Websites -- All DOE Office Websites (Extended Search)

Capacity Immobilized Amine Sorbents Capacity Immobilized Amine Sorbents Opportunity The Department of Energy's National Energy Technology Laboratory is seeking licensing partners interested in implementing United States Patent Number 7,288,136 entitled "High Capacity Immobilized Amine Sorbents." Disclosed in this patent is the invention of a method that facilitates the production of low-cost carbon dioxide (CO 2 ) sorbents for use in large-scale gas-solid processes. This method treats an amine to increase the number of secondary amine groups and impregnates the amine in a porous solid support. As a result of this improvement, the method increases CO 2 capture capacity and decreases the cost of using an amine-enriched solid sorbent in CO 2 capture systems. Overview The U.S. Department of Energy has placed a high priority on the separation

5

Graphene Enhances Li Storage Capacity of Porous Single-crystalline Silicon Nanowires  

SciTech Connect

We demonstrated that graphene significantly enhances the reversible capacity of porous silicon nanowires used as the anode in Li-ion batteries. We prepared our experimental nanomaterials, viz., graphene and porous single-crystalline silicon nanowires, respectively, using a liquid-phase graphite exfoliation method and an electroless HF/AgNO{sub 3} etching process. The Si porous nanowire/graphene electrode realized a charge capacity of 2470 mAh g{sup -1} that is much higher than the 1256 mAh g{sup -1} of porous Si nanowire/C-black electrode and 6.6 times the theoretical capacity of commercial graphite. This relatively high capacity could originate from the favorable charge-transportation characteristics of the combination of graphene with the porous Si 1D nanostructure.

Wang, X.; Han, W.

2010-12-01T23:59:59.000Z

6

High Capacity Hydrogen Storage Nanocomposite - Energy ...  

Energy Storage Advanced Materials High Capacity Hydrogen Storage Nanocomposite Processes to add metal hydrideds to nanocarbon structures to yield high capacity ...

7

High current capacity electrical connector  

DOE Patents (OSTI)

An electrical connector is provided for coupling high current capacity electrical conductors such as copper busses or the like. The connector is arranged in a "sandwiched" configuration in which a conductor plate contacts the busses along major surfaces thereof clamped between two stainless steel backing plates. The conductor plate is provided with a plurality of contact buttons affixed therein in a spaced array such that the caps of the buttons extend above the conductor plate surface to contact the busses. When clamping bolts provided through openings in the sandwiched arrangement are tightened, Belleville springs provided under the rim of each button cap are compressed and resiliently force the caps into contact with the busses' contacting surfaces to maintain a predetermined electrical contact area provided by the button cap tops. The contact area does not change with changing thermal or mechanical stresses applied to the coupled conductors.

Bettis, Edward S. (Oak Ridge, TN); Watts, Harry L. (Lake City, TN)

1976-01-13T23:59:59.000Z

8

Heat capacity of low temperature Ge- and Si-calorimeters and optimization of As-implanted silicon thermistors  

E-Print Network (OSTI)

Heat capacity of low temperature Ge- and Si-calorimeters and optimization of As-implanted silicon thermistors

Alessandrello, A; Cerofolini, G F; Fiorini, Ettore; Giuliani, A; Liguori, C; Meda, L; Niinikoski, T O; Rijllart, A

1988-01-01T23:59:59.000Z

9

High capacity immobilized amine sorbents  

DOE Patents (OSTI)

A method is provided for making low-cost CO.sub.2 sorbents that can be used in large-scale gas-solid processes. The improved method entails treating an amine to increase the number of secondary amine groups and impregnating the amine in a porous solid support. The method increases the CO.sub.2 capture capacity and decreases the cost of utilizing an amine-enriched solid sorbent in CO.sub.2 capture systems.

Gray, McMahan L. (Pittsburgh, PA); Champagne, Kenneth J. (Fredericktown, PA); Soong, Yee (Monroeville, PA); Filburn, Thomas (Granby, CT)

2007-10-30T23:59:59.000Z

10

High index contrast platform for silicon photonics  

E-Print Network (OSTI)

This thesis focuses on silicon-based high index contrast (HIC) photonics. In addition to mature fiber optics or low index contrast (LIC) platform, which is often referred to as Planar Lightwave Cirrcuit (PLC) or Silica ...

Akiyama, Shoji, 1972-

2004-01-01T23:59:59.000Z

11

Composite Silicon Carbon Nano-fiber Anode for High Energy ...  

Science Conference Proceedings (OSTI)

Presentation Title, Composite Silicon Carbon Nano-fiber Anode for High .... of Super P Carbon Black and Silicon Carbide in Si-based Lithium Ion Batteries.

12

The NASA CSTI High Capacity Power Project  

SciTech Connect

The SP-100 Space Nuclear Power Program was established in 1983 by DOD, DOE, and NASA as a joint program to develop technology for military and civil applications. Starting in 1986, NASA has funded a technology program to maintain the momentum of promising aerospace technology advancement started during Phase I of SP-100 and to strengthen, in key areas, the changes for successful development and growth capability of space nuclear reactor power systems for a wide range of future space applications. The elements of the CSTI High Capacity Power Project include Systems Analysis, Stirling Power Conversion, Thermoelectric Power Conversion, Thermal Management, Power Management, Systems Diagnostics, Environmental Interactions, and Material/Structural Development. Technology advancement in all elements is required to provide the growth capability, high reliability and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall project with develop and demonstrate the technology base required to provide a wide range of modular power systems compatible with the SP-100 reactor which facilitates operation during lunar and planetary day/night cycles as well as allowing spacecraft operation at any attitude or distance from the sun. Significant accomplishments in all of the project elements will be presented, along with revised goals and project timelines recently developed.

Winter, J.; Dudenhoefer, J.; Juhasz, A.; Schwarze, G.; Patterson, R.; Ferguson, D.; Titran, R. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; Schmitz, P. [Sverdrup Technology, Inc., Brook Park, OH (United States). Lewis Research Center Group; Vandersande, J. [Jet Propulsion Lab., Pasadena, CA (United States)

1994-09-01T23:59:59.000Z

13

Highly Efficient Silicon Light Emitting Diode  

E-Print Network (OSTI)

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

14

Electrochemical deposition of high purity silicon from molten fluoride ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2014 TMS Annual Meeting & Exhibition. Symposium , Solar Cell Silicon. Presentation Title, Electrochemical deposition of high purity ...

15

Fractography of High Strength Silicon  

Science Conference Proceedings (OSTI)

Splitting Tension Test on High-Strength Concretes Studied by Artificial Intelligence and Response Surface Analysis · Spring Failures -The Role of Corrosion in ...

16

Inelastic hosts as electrodes for high-capacity lithium-ion batteries Kejie Zhao, Matt Pharr, Joost J. Vlassak, and Zhigang Suoa  

E-Print Network (OSTI)

Inelastic hosts as electrodes for high-capacity lithium-ion batteries Kejie Zhao, Matt Pharr, Joost for high-capacity lithium-ion batteries. Upon absorbing lithium, silicon swells several times its volume strength. © 2011 American Institute of Physics. doi:10.1063/1.3525990 Lithium-ion batteries

17

High quality factor and high confinement silicon resonators using  

E-Print Network (OSTI)

waveguides," IEEE Photon. Technol. Lett. 8, 647­648 (1996). 4. I. Kiyat, A. Aydinli, and N. Dagli, "High-Q. Sel. Top. Quantum Electron. 12, 1678­1687 (2006). 2. Y. Okawachi, A. Gaeta, and M. Lipson. Xiao, M. H. Khan, H. Shen, and M. Qi, "Compact silicon microring resonators with ultra-low propagation

Lipson, Michal

18

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

DOE Green Energy (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

19

High resolution amorphous silicon radiation detectors  

DOE Patents (OSTI)

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

Street, Robert A. (Palo Alto, CA); Kaplan, Selig N. (El Cerrito, CA); Perez-Mendez, Victor (Berkeley, CA)

1992-01-01T23:59:59.000Z

20

High resolution amorphous silicon radiation detectors  

DOE Patents (OSTI)

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

1992-05-26T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Silicon nitride having a high tensile strength  

Science Conference Proceedings (OSTI)

A ceramic body comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa.

Pujari, Vimal K. (Northboro, MA); Tracey, Dennis M. (Medfield, MA); Foley, Michael R. (Oxford, MA); Paille, Norman I. (Oxford, MA); Pelletier, Paul J. (Sutton, MA); Sales, Lenny C. (Grafton, MA); Willkens, Craig A. (Worcester, MA); Yeckley, Russell L. (Latrobe, PA)

1998-01-01T23:59:59.000Z

22

Polymers with Tailored Electronic Structure for High Capacity Lithium  

NLE Websites -- All DOE Office Websites (Extended Search)

Polymers with Tailored Electronic Structure for High Capacity Lithium Polymers with Tailored Electronic Structure for High Capacity Lithium Battery Electrodes Title Polymers with Tailored Electronic Structure for High Capacity Lithium Battery Electrodes Publication Type Journal Article Year of Publication 2011 Authors Liu, Gao, Shidi Xun, Nenad Vukmirovic, Xiangyun Song, Paul Olalde-Velasco, Honghe Zheng, Vince S. Battaglia, Linwang Wang, and Wanli Yang Journal Advanced Materials Volume 23 Start Page 4679 Issue 40 Pagination 4679 - 4683 Date Published 10/2011 Keywords binders, conducting polymers, density funcational theory, lithium batteries, X-ray spectroscopy Abstract A conductive polymer is developed for solving the long-standing volume change issue in lithium battery electrodes. A combination of synthesis, spectroscopy and simulation techniques tailors the electronic structure of the polymer to enable in situ lithium doping. Composite anodes based on this polymer and commercial Si particles exhibit 2100 mAh g-1 in Si after 650 cycles without any conductive additive.

23

Method and apparatus for producing high purity silicon  

DOE Patents (OSTI)

A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

Olson, Jerry M. (Lakewood, CO)

1984-01-01T23:59:59.000Z

24

Low cost routes to high purity silicon and derivatives thereof  

DOE Patents (OSTI)

The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon).

Laine, Richard M; Krug, David James; Marchal, Julien Claudius; Mccolm, Andrew Stewart

2013-07-02T23:59:59.000Z

25

High voltage bipolar-CMOS structure using porous silicon  

DOE Patents (OSTI)

A method for integrating a silicon-on-insulator device and a bulk bipolar device on a semiconductor body. The invention simultaneously forms the two regions for the silicon-on-insulator device and the bipolar device. The invention enables a high voltage CMOS power device to be located on the same chip as a bipolar logic device enabling smart power devices.

Guilinger, T.R.; Kelly, M.J.; Tsao, S.S.

1990-01-01T23:59:59.000Z

26

High capacity nickel battery material doped with alkali metal cations  

SciTech Connect

A high capacity battery material is made, consisting essentially of hydrated Ni(II) hydroxide, and about 5 wt. % to about 40 wt. % of Ni(IV) hydrated oxide interlayer doped with alkali metal cations selected from potassium, sodium and lithium cations.

Jackovitz, John F. (Monroeville, PA); Pantier, Earl A. (Penn Hills, PA)

1982-05-18T23:59:59.000Z

27

An Insect Herbivore Microbiome with High Plant Biomass-Degrading Capacity  

E-Print Network (OSTI)

Microbiome with High Plant Biomass-Degrading Capacity Garretbioprocessing of cellulosic biomass. Bioresour Technol 100:of bacteria with high plant biomass-degrading capacity.

Suen, Garret

2011-01-01T23:59:59.000Z

28

Silicon nitride ceramic having high fatigue life and high toughness  

DOE Patents (OSTI)

A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

Yeckley, Russell L. (Oakham, MA)

1996-01-01T23:59:59.000Z

29

Electrochemical Lithiation of Silicon Clathrate Materials  

Science Conference Proceedings (OSTI)

Abstract Scope, Due to its high theoretical specific capacity, silicon has been the subject of intense research as an anode for lithium-ion batteries.

30

Silicon nitride having a high tensile strength  

DOE Patents (OSTI)

A silicon nitride ceramic comprising: a) inclusions no greater than 25 microns in length, b) agglomerates no greater than 20 microns in diameter, and c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa.

Pujari, Vimal K. (Northboro, MA); Tracey, Dennis M. (Medfield, MA); Foley, Michael R. (Oxford, MA); Paille, Norman I. (Oxford, MA); Pelletier, Paul J. (Millbury, MA); Sales, Lenny C. (Grafton, MA); Willkens, Craig A. (Sterling, MA); Yeckley, Russell L. (Oakham, MA)

1996-01-01T23:59:59.000Z

31

Method of and apparatus for removing silicon from a high temperature sodium coolant  

DOE Patents (OSTI)

A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Yunker, Wayne H. (Richland, WA); Christiansen, David W. (Kennewick, WA)

1987-01-01T23:59:59.000Z

32

Modelling and fabrication of high-efficiency silicon solar cells  

DOE Green Energy (OSTI)

This report covers the research conducted on modelling and development of high-efficiency silicon solar cells during the period May 1989 to August 1990. First, considerable effort was devoted toward developing a ray-tracing program for the photovoltaic community to quantify and optimize surface texturing for solar cells. Second, attempts were made to develop a hydrodynamic model for device simulation. Such a model is somewhat slower than drift-diffusion type models like PC-1D, but it can account for more physical phenomena in the device, such as hot carrier effects, temperature gradients, thermal diffusion, and lattice heat flow. In addition, Fermi-Dirac statistics have been incorporated into the model to deal with heavy doping effects more accurately. Third and final component of the research includes development of silicon cell fabrication capabilities and fabrication of high-efficiency silicon cells. 84 refs., 46 figs., 10 tabs.

Rohatgi, A.; Smith, A.W.; Salami, J. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical Engineering] [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical Engineering

1991-10-01T23:59:59.000Z

33

High Capacity Network Link Emulation Using Network Processors  

E-Print Network (OSTI)

Network link emulation constitutes an important part of network emulation, wherein links in the topology are emulated to subject the network tra#c to di#erent bandwidths, latencies, packet loss distributions, and queuing models. Increasingly, experimenters are creating topologies with substantial emulation bandwidths; contributed both by a large number of low-speed links and a small number of high-speed links. It is a significant challenge for a link emulator to meet this requirement in real time. Existing solutions for link emulation use general-purpose PC-class machines; the well-understood hardware and software PC platform make it attractive for quick implementation and easy deployment. A PC architecture is largely optimized for compute bound applications with large amounts of exploitable instruction-level parallelism (ILP) and good memory reference locality. Networking applications, on the other hand, have little ILP and instead exhibit a coarser packet-level parallelism. In this thesis, we propose using network processors for building high capacity link emulators. Network processors are programmable processors that employ a multithreaded, multiprocessor architecture to exploit packet-level parallelism, and have instruction sets and hardware support geared towards e#cient implementation of common networking tasks. To evaluate our proposal, we have designed and implemented a link emulator, LinkEM, on the IXP1200 network processor. We present the design and a mapping of LinkEM's tasks across the multiple microengines and hardware threads of the IXP1200. We also give a detailed evaluation of LinkEM, which includes validating its emulation accuracy, and measuring its emulation throughput and link multiplexing capacity. Our evaluation shows that LinkEM has a factor of be...

Abhijeet A. Joglekar; Abhijeet A. Joglekar; Abhijeet A. Joglekar; John Carter; John Regehr; Date Jay Lepreau; David S. Chapman

2004-01-01T23:59:59.000Z

34

Toward an Ideal Polymer Binder Design for High-Capacity Battery...  

NLE Websites -- All DOE Office Websites (Extended Search)

Toward an Ideal Polymer Binder Design for High-Capacity Battery Anodes Title Toward an Ideal Polymer Binder Design for High-Capacity Battery Anodes Publication Type Journal Article...

35

High Capacity Lithium-Ion Battery Characterization for Vehicular Applications.  

E-Print Network (OSTI)

?? A lithium-ion battery is one of the key research topics in energy storage technologies. Major characterization tests such as static capacity, open circuit voltage… (more)

Ahmed, Sazzad Hossain

2012-01-01T23:59:59.000Z

36

Surface and bulk modified high capacity layered oxide cathodes with low irreversible capacity loss  

DOE Patents (OSTI)

The present invention includes compositions, surface and bulk modifications, and methods of making of (1-x)Li[Li.sub.1/3Mn.sub.2/3]O.sub.2.xLi[Mn.sub.0.5-yNi.sub.0.5-yCo.sub.2- y]O.sub.2 cathode materials having an O3 crystal structure with a x value between 0 and 1 and y value between 0 and 0.5, reducing the irreversible capacity loss in the first cycle by surface modification with oxides and bulk modification with cationic and anionic substitutions, and increasing the reversible capacity to close to the theoretical value of insertion/extraction of one lithium per transition metal ion (250-300 mAh/g).

Manthiram, Arumugam (Austin, TX); Wu, Yan (Austin, TX)

2010-03-16T23:59:59.000Z

37

Processes for producing low cost, high efficiency silicon solar cells  

SciTech Connect

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

1996-01-01T23:59:59.000Z

38

High-efficiency silicon concentrator cell commercialization  

SciTech Connect

This report summarizes the first phase of a forty-one month program to develop a commercial, high-efficiency concentrator solar cell and facility for manufacturing it. The period covered is November 1, 1990 to December 31, 1991. This is a joint program between the Electric Power Research Institute (EPRI) and Sandia National Laboratories. (This report is also published by EPRI as EPRI report number TR-102035.) During the first year of the program, SunPower accomplished the following major objectives: (1) a new solar cell fabrication facility, which is called the Cell Pilot Line (CPL), (2) a baseline concentrator cell process has been developed, and (3) a cell testing facility has been completed. Initial cell efficiencies are about 23% for the baseline process. The long-range goal is to improve this efficiency to 27%.

Sinton, R.A.; Swanson, R.M. [SunPower Corp., Sunnyvale, CA (US)

1993-05-01T23:59:59.000Z

39

Method of and apparatus for removing silicon from a high temperature sodium coolant  

DOE Patents (OSTI)

This patent discloses a method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Yunker, W.H.; Christiansen, D.W.

1983-11-25T23:59:59.000Z

40

High-efficiency concentrator silicon solar cells  

DOE Green Energy (OSTI)

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents (OSTI)

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

Rohatgi, Ajeet (Marietta, GA); Doshi, Parag (Altanta, GA); Tate, John Keith (Lawrenceville, GA); Mejia, Jose (Atlanta, GA); Chen, Zhizhang (Duluth, GA)

1998-06-16T23:59:59.000Z

42

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents (OSTI)

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

1998-06-16T23:59:59.000Z

43

A Low Cost, High Capacity Regenerable Sorbent for Pre-combustion...  

NLE Websites -- All DOE Office Websites (Extended Search)

A Low Cost, High Capacity Regenerable Sorbent for Pre-combustion CO 2 Capture Background An important component of the Department of Energy (DOE) Carbon Sequestration Program is...

44

Applications of GridProbe Technology for Traffic Monitoring on High-Capacity Backbone Networks  

E-Print Network (OSTI)

Applications of GridProbe Technology for Traffic Monitoring on High-Capacity Backbone Networks Data for the UKLIGHT international high capacity experimental network. The proposed system will record data flow projects in the e-science framework to enable data collection on core activities on such high speed

Haddadi, Hamed

45

Large Plastic Deformation in High-Capacity Lithium-Ion Batteries Caused by Charge and Discharge  

E-Print Network (OSTI)

Large Plastic Deformation in High-Capacity Lithium-Ion Batteries Caused by Charge and Discharge, Massachusetts 02138 Evidence has accumulated recently that a high-capacity elec- trode of a lithium-ion battery in the particle is high, possibly leading to fracture and cavitation. I. Introduction LITHIUM-ION batteries

Suo, Zhigang

46

High Capacity Pouch-Type Li-air Batteries  

Science Conference Proceedings (OSTI)

The pouch-type Li-air batteries operated in ambient condition are reported in this work. The battery used a heat sealable plastic membrane as package material, O2¬ diffusion membrane and moisture barrier. The large variation in internal resistance of the batteries is minimized by a modified separator which can bind the cell stack together. The cells using the modified separators show improved and repeatable discharge performances. It is also found that addition of about 20% of 1,2-dimethoxyethane (DME) in PC:EC (1:1) based electrolyte solvent improves can improve the wetability of carbon electrode and the discharge capacities of Li-air batteries, but further increase in DME amount lead to a decreased capacity due to increase electrolyte loss during discharge process. The pouch-type Li-air batteries with the modified separator and optimized electrolyte has demonstrated a specific capacity of 2711 mAh g-1 based on carbon and a specific energy of 344 Wh kg-1 based on the complete batteries including package.

Wang, Deyu; Xiao, Jie; Xu, Wu; Zhang, Jiguang

2010-05-05T23:59:59.000Z

47

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells  

E-Print Network (OSTI)

of a triple cell showing 10.7% stable efficiency. Figure 4-1 Schematic diagram of the Hot Wire CVD deposition. Task 7: High-rate deposition of a-Si based solar cells We have conducted extensive research using a hot1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE I Annual

Deng, Xunming

48

High Rate and High Capacity Li-Ion Electrodes for Vehicular Applications  

Science Conference Proceedings (OSTI)

Significant advances in both energy density and rate capability for Li-ion batteries are necessary for implementation in electric vehicles. We have employed two different methods to improve the rate capability of high capacity electrodes. For example, we previously demonstrated that thin film high volume expansion MoO{sub 3} nanoparticle electrodes ({approx}2 {micro}m thick) have a stable capacity of {approx}630 mAh/g, at C/2 (charge/dicharge in 2 hours). By fabricating thicker conventional electrodes, an improved reversible capacity of {approx}1000 mAh/g is achieved, but the rate capability decreases. To achieve high-rate capability, we applied a thin Al{sub 2}O{sub 3} atomic layer deposition coating to enable the high volume expansion and prevent mechanical degradation. Also, we recently reported that a thin ALD Al{sub 2}O{sub 3} coating can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 C. Additionally, Al{sub 2}O{sub 3} ALD films with a thickness of 2 to 4 {angstrom} have been shown to allow LiCoO{sub 2} to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs. Li/Li{sup +}. Capacity fade at this high voltage is generally caused by oxidative decomposition of the electrolyte or cobalt dissolution. We have recently fabricated full cells of NG and LiCoO{sub 2} and coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. In a different approach we have employed carbon single-wall nanotubes (SWNTs) to synthesize binder-free, high-rate capability electrodes, with 95 wt.% active materials. In one case, Fe{sub 3}O{sub 4} nanorods are employed as the active storage anode material. Recently, we have also employed this method to demonstrate improved conductivity and highly improved rate capability for a LiNi{sub 0.4}Mn{sub 0.4}Co{sub 0.2}O{sub 2} cathode material. Raman spectroscopy was employed to understand how the SWNTs function as a highly flexible conductive additive.

Dillon, A. C.

2012-01-01T23:59:59.000Z

49

Carbon-coated silicon nanowire array films for high-performance lithium-ion battery anodes  

Science Conference Proceedings (OSTI)

Carbon-coated silicon nanowire array films prepared by metal catalytic etching of silicon wafers and pyrolyzing of carbon aerogel were used for lithium-ion battery anodes. The films exhibited an excellent first discharge capacity of 3344 ? mAh ? g ? 1 with a Coulombic efficiency of 84% at a rate of 150 ? mA ? g ? 1 between 2 and 0.02 V and a significantly enhanced cycling performance

Rui Huang; Xing Fan; Wanci Shen; Jing Zhu

2009-01-01T23:59:59.000Z

50

Preparation of High Purity Silicon by Electrolysis-Vacuum Distillation  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2010 TMS Annual Meeting & Exhibition. Symposium , Solar Cell Silicon: Production and Recyling. Presentation Title, Preparation of ...

51

Preparation of High Purity Silicon by Electrolysis-Vacuum Distillation  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2011 TMS Annual Meeting & Exhibition. Symposium , Silicon Production, Purification and Recycling for Photovoltaic Cells.

52

High capacity adsorption media and method of producing  

DOE Patents (OSTI)

A method of producing an adsorption medium to remove at least one constituent from a feed stream. The method comprises dissolving at least one metal compound in a solvent to form a metal solution, dissolving polyacrylonitrile into the metal solution to form a PAN-metal solution, and depositing the PAN-metal solution into a quenching bath to produce the adsorption medium. The at least one constituent, such as arsenic, selenium, or antimony, is removed from the feed stream by passing the feed stream through the adsorption medium. An adsorption medium having an increased metal loading and increased capacity for arresting the at least one constituent to be removed is also disclosed. The adsorption medium includes a polyacrylonitrile matrix and at least one metal hydroxide incorporated into the polyacrylonitrile matrix.

Tranter, Troy J. (Idaho Falls, ID); Herbst, R. Scott (Idaho Falls, ID); Mann, Nicholas R. (Blackfoot, ID); Todd, Terry A. (Aberdeen, ID)

2008-05-06T23:59:59.000Z

53

High capacity adsorption media and method of producing  

DOE Patents (OSTI)

A method of producing an adsorption medium to remove at least one constituent from a feed stream. The method comprises dissolving and/or suspending at least one metal compound in a solvent to form a metal solution, dissolving polyacrylonitrile into the metal solution to form a PAN-metal solution, and depositing the PAN-metal solution into a quenching bath to produce the adsorption medium. The at least one constituent, such as arsenic, selenium, or antimony, is removed from the feed stream by passing the feed stream through the adsorption medium. An adsorption medium having an increased metal loading and increased capacity for arresting the at least one constituent to be removed is also disclosed. The adsorption medium includes a polyacrylonitrile matrix and at least one metal hydroxide incorporated into the polyacrylonitrile matrix.

Tranter, Troy J. (Idaho Falls, ID); Mann, Nicholas R. (Blackfoot, ID); Todd, Terry A. (Aberdeen, ID); Herbst, Ronald S. (Idaho Falls, ID)

2010-10-05T23:59:59.000Z

54

Managing capacity in the high-tech industry: A review of the literature  

E-Print Network (OSTI)

This article surveys a new generation of analytical tools for capacity planning and management, especially in high-tech industries such as semiconductors, electronics and bio-techs. The objectives of the article are to (1) identify fundamental theory driving current research in capacity management, (2) review emerging models in operations research, game theory, and economics that address strategic, tactical and operational decision models for high-tech capacity management, and (3) take an in-depth look at capacity-optimization models developed in the specific context of semiconductor manufacturing. The goal of this survey is to go beyond typical production-planning and capacity-management literature and to examine research that can potentially broaden capacity-planning research. For instance, we explore the role of option theory and real options in modeling

S. David Wu; Murat Erkoc; Suleyman Karabuk

2005-01-01T23:59:59.000Z

55

All-solid-state Hybrid Batteries with High Capacity - Programmaster ...  

Science Conference Proceedings (OSTI)

Abstract Scope, High-performance thin film battery (TFB) has gained many attentions, as active RFID tags, and MEMS based electronic systems. Although the ...

56

Cleaning the Buildings of High Tech Companies in Silicon Valley: The Case of Mexican Janitors in Sonix  

E-Print Network (OSTI)

the Buildings of High Tech Companies in Silicon Valley: Thethe Buildings of High-Tech Companies in Silicon Valley: Theof the numerous high-tech companies that are concentrated in

Zlolniski, Christián

2000-01-01T23:59:59.000Z

57

Summary Status of Conceptual High-Performance, High-Specific-Output Silicon Photovoltaic Systems  

Science Conference Proceedings (OSTI)

The report reviews development efforts and the current status of high-performance, high-specific-output silicon photovoltaic (PV) solar systems. Three system concepts are covered: (1) high-intensity irradiance from individual concentrators directly onto individual PV cells, (2) the redirection of sunlight by a large dish concentrator into a cavity receiver lined with cells, and (3) the redirection of sunlight by a large dish concentrator into a thermophotovoltaic receiver. Key issues, technical risk, and...

1982-05-01T23:59:59.000Z

58

HIGH SURFACE AREA SILICON CARBIDE-COATED CARBON AEROGEL ...  

Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicon carbide, improving the thermal stability of the carbon ae ...

59

High Wind Penetration Impact on U.S. Wind Manufacturing Capacity and Critical Resources  

DOE Green Energy (OSTI)

This study used two different models to analyze a number of alternative scenarios of annual wind power capacity expansion to better understand the impacts of high levels of wind generated electricity production on wind energy manufacturing and installation rates.

Laxson, A.; Hand, M. M.; Blair, N.

2006-10-01T23:59:59.000Z

60

NETL: A Low Cost, High Capacity Regenerable Sorbent for Pre-combustion...  

NLE Websites -- All DOE Office Websites (Extended Search)

A Low Cost, High Capacity Regenerable Sorbent for Pre-combustion CO2 Capture Project No.: DE-FE0000469 TDA Research (TDA) is testing and validating the technical and economic...

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Low emissivity high-temperature tantalum thin film coatings for silicon devices  

E-Print Network (OSTI)

The authors study the use of thin ( ? 230?nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation ...

Rinnerbauer, Veronika

62

Silicon Fresnel zone plates for high heat load X-ray microscopy  

Science Conference Proceedings (OSTI)

A technique to produce diffractive X-ray lenses optimized for high heat load applications is demonstrated. The lenses are made from single crystal silicon membranes, which have uniform thermal conductivity and homogeneous thermal expansion. Silicon Fresnel ... Keywords: Electron beam lithography, Fresnel zone plate, Reactive ion etching, X-ray microscopy

J. Vila-Comamala; K. Jefimovs; J. Raabe; B. Kaulich; C. David

2008-05-01T23:59:59.000Z

63

High energy bursts from a solid state laser operated in the heat capacity limited regime  

DOE Patents (OSTI)

High energy bursts are produced from a solid state laser operated in a heat capacity limited regime. Instead of cooling the laser, the active medium is thermally well isolated. As a result, the active medium will heat up until it reaches some maximum acceptable temperature. The waste heat is stored in the active medium itself. Therefore, the amount of energy the laser can put out during operation is proportional to its mass, the heat capacity of the active medium, and the temperature difference over which it is being operated. The high energy burst capacity of a heat capacity operated solid state laser, together with the absence of a heavy, power consuming steady state cooling system for the active medium, will make a variety of applications possible. Alternately, cooling takes place during a separate sequence when the laser is not operating. Industrial applications include new material working processes.

Albrecht, Georg (Livermore, CA); George, E. Victor (Livermore, CA); Krupke, William F. (Pleasanton, CA); Sooy, Walter (Pleasanton, CA); Sutton, Steven B. (Manteca, CA)

1996-01-01T23:59:59.000Z

64

High energy bursts from a solid state laser operated in the heat capacity limited regime  

DOE Patents (OSTI)

High energy bursts are produced from a solid state laser operated in a heat capacity limited regime. Instead of cooling the laser, the active medium is thermally well isolated. As a result, the active medium will heat up until it reaches some maximum acceptable temperature. The waste heat is stored in the active medium itself. Therefore, the amount of energy the laser can put out during operation is proportional to its mass, the heat capacity of the active medium, and the temperature difference over which it is being operated. The high energy burst capacity of a heat capacity operated solid state laser, together with the absence of a heavy, power consuming steady state cooling system for the active medium, will make a variety of applications possible. Alternately, cooling takes place during a separate sequence when the laser is not operating. Industrial applications include new material working processes. 5 figs.

Albrecht, G.; George, E.V.; Krupke, W.F.; Sooy, W.; Sutton, S.B.

1996-06-11T23:59:59.000Z

65

Low Cost, High Efficiency Tandem Silicon Solar Cells and LEDs  

iency solar cells that leverage the well-established design and manufacturing technology of silicon cells while delivering the performance previously achievable only by far more complex and expensive tandem solar cells. 

66

High temperature investigations of crystalline silicon solar cell materials  

E-Print Network (OSTI)

Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

Hudelson, George David Stephen, III

2009-01-01T23:59:59.000Z

67

Research on stable, high-efficiency amorphous silicon multijunction modules  

DOE Green Energy (OSTI)

This report describes research to improve the understanding of amorphous silicon alloys and other relevant non-semiconductor materials for use in high-efficiency, large-area multijunction modules. The research produced an average subcell initial efficiency of 8.8% over a 1-ft{sup 2} area using same-band-gap, dual-junction cells deposited over a ZnO/AlSi back reflector. An initial efficiency of 9.6% was achieved using a ZnO/Ag back reflector over smaller substrates. A sputtering machine will be built to deposit a ZnO/Ag back reflector over a 1-ft{sup 2} area so that a higher efficiency can also be obtained on larger substrates. Calculations have been performed to optimize the grid pattern, bus bars, and cell interconnects on modules. With our present state of technology, we expect a difference of about 6% between the aperture-area and active-area efficiencies of modules. Preliminary experiments show a difference of about 8%. We can now predict the performance of single-junction cells after long-term light exposure at 50{degree}C by exposing cells to short-term intense light at different temperatures. We find that single-junction cells deposited on a ZnO/Ag back reflector show the highest stabilized efficiency when the thickness of the intrinsic layers is about 2000 {angstrom}. 8 refs.

Guha, S. (United Solar Systems Corp., Troy, MI (United States))

1991-12-01T23:59:59.000Z

68

Research on stable, high-efficiency amorphous silicon multijunction modules  

DOE Green Energy (OSTI)

This report describes the progress made during Phase 1 of research and development program to obtain high-efficiency amorphous silicon alloy multijunction modules. Using a large-area deposition system, double-and triple-junction cells were made on stainless steel substrates of over 1 ft{sup 2} area with Ag and ZnO predeposited back reflector. Modules of over 1 ft{sup 2} were produced with between 9.2% and 9.9 initial aperture-area efficiencies as measured under a USSC Spire solar simulator. Efficiencies as measured under the NREL Spire solar simulator were found to be typically 15% to 18% lower. The causes for this discrepancy are now being investigated. The modules show about 15% degradation after 600 hours of one-sun illumination at 50{degrees}C. To optimize devices for higher stabilized efficiency, a new method was developed by which the performance of single-junction cells after long-term, one-sun exposure at 50{degrees}C can be predicted by exposing cells to short-term intense light at different temperatures. This method is being used to optimize the component cells of the multijunction structure to obtain the highest light-degraded efficiency.

Banerjee, A.; Chen, E.; Clough, R.; Glatfelter, T.; Guha, S.; Hammond, G.; Hopson, M.; Jackett, N.; Lycette, M.; Noch, J.; Palmer, T.; Pawlikiewicz, A.; Rosenstein, I.; Ross, R.; Wolf, D.; Xu, X.; Yang, J.; Younan, K.

1992-04-01T23:59:59.000Z

69

Silicon nucleation and film evolution on silicon dioxide using disilane: Rapid thermal chemical vapor deposition of very smooth silicon at high deposition rates  

SciTech Connect

An investigation of Si{sub 2}H{sub 6} and H{sub 2} for rapid thermal chemical vapor deposition (RTCVD) of silicon on SiO{sub 2} has been performed at temperatures ranging from 590 to 900 C and pressures ranging from 0.1 to 1.5 Torr. Deposition at 590 C yields amorphous silicon films with the corresponding ultrasmooth surface with a deposition rate of 68 nm/min. Cross-sectional transmission electron microscopy of a sample deposited at 625 C and 1 Torr reveals a bilayer structure which is amorphous at the growth surface and crystallized at the oxide interface. Higher temperatures yield polycrystalline films where the surface roughness depends strongly on both deposition pressure and temperature. Silane-based amorphous silicon deposition in conventional systems yields the expected ultrasmooth surfaces, but at greatly reduced deposition rates unsuitable for single-wafer processing. However, disilane, over the process window considered here, yields growth rates high enough to be appropriate for single-wafer manufacturing, thus providing a viable means for deposition of very smooth silicon films on SiO{sub 2} in a single-wafer environment.

Violette, K.E.; Oeztuerk, M.C.; Christensen, K.N.; Maher, D.M. [North Carolina State Univ., Raleigh, NC (United States)

1996-02-01T23:59:59.000Z

70

High-Efficiency, High-Capacity, Low-NOx Aluminum Melting Using Oxygen-Enhanced Combustion  

SciTech Connect

This report describes the development and application of a novel oxygen enhanced combustion system with an integrated vacuum swing adsorption (VSA) oxygen supply providing efficient, low NOx melting in secondary aluminum furnaces. The mainstay of the combustion system is a novel air-oxy-natural gas burner that achieves high productivity and energy efficiency with low NOx emissions through advanced mixing concepts and the use of separate high- and low-purity oxidizer streams. The technology was installed on a reverberatory, secondary aluminum melting plant at the Wabash Aluminum Alloy's Syracuse, N.Y. plant, where it is currently in operation. Field testing gave evidence that the new burner technology meets the stringent NOx emissions target of 0.323 lb NO2/ton aluminum, thus complying with regulations promulgated by Southern California's South Coast Air Quality Management District (SCAQMD). Test results also indicated that the burner technology exceeded fuel efficiency and melting capacity goals. Economic modeling showed that the novel air-oxy-fuel (ADF) combustion technology provides a substantial increase in furnace profitability relative to air-fuel operation. Model results also suggest favorable economics for the air-oxy-fuel technology relative to a full oxy-fuel conversion of the furnace.

D'Agostini, M.D.

2000-06-02T23:59:59.000Z

71

Study on structure heat capacity of high-rise residences: (part 2) comparison by insulation methods  

Science Conference Proceedings (OSTI)

This paper follows the paper of Part 1. Here we examined Air-Conditioning loads (hereinafter referred to as AC loads) impact in several deferent cases of insulation methods in interior of super high-rise residences by using the dynamic simulation software ... Keywords: AC load, heat capacity, heat insulation method, high-rise residences, simulation

Yupeng Wang; Hiroatsu Fukuda; Akihiro Mitsumoto; Akihito Ozaki; Yuko Kuma

2007-08-01T23:59:59.000Z

72

NETL: IEP - Post-Combustion CO2 Emissions Control - Novel High Capacity  

NLE Websites -- All DOE Office Websites (Extended Search)

Novel High Capacity Oligomers for Low Cost CO2 Capture Novel High Capacity Oligomers for Low Cost CO2 Capture Project No.: DE-NT0005310 GE Global Research is using both computational and laboratory methods to identify and produce novel oligomeric solvents for the post-combustion capture of carbon dioxide (CO2). An oligomer is a polymer with relatively few structural units. Molecular and system modeling, advanced synthetic methods, and laboratory testing will be used to identify oligomeric solvents that have the potential for high CO2 capture capacity with corresponding low regeneration energy requirements. GE Global Test Equipment GE Global Test Equipment Related Papers and Publications: Aminosilicone Solvents for Low Cost CO2 Capture [PDF-2.0MB] (Sept 2010) Presentation given at the 2010 NETL CO2 Capture Technology Meeting

73

Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators  

E-Print Network (OSTI)

We demonstrated high-index-contrast, waveguide-coupled As[subscript 2]Se[subscript 3] chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The ...

Lin, Hongtao

74

HT Combinatorial Screening of Novel Materials for High Capacity Hydrogen Storage  

NLE Websites -- All DOE Office Websites (Extended Search)

FLORIDA SOLAR ENERGY CENTER FLORIDA SOLAR ENERGY CENTER Creating Energy Independence Since 1975 A Research Institute of the University of Central Florida HT Combinatorial Screening of HT Combinatorial Screening of Novel Materials for High Capacity Novel Materials for High Capacity Hydrogen Storage Hydrogen Storage Ali T Ali T - - Raissi Raissi Director, Hydrogen & Fuel Cell R&D Director, Hydrogen & Fuel Cell R&D Division Division High Throughput/Combinatorial Analysis of Hydrogen Storage High Throughput/Combinatorial Analysis of Hydrogen Storage Materials Workshop, Bethesda, MD Materials Workshop, Bethesda, MD 26 June 2007 26 June 2007 This presentation does not contain any proprietary or confidential information 2 Objectives Objectives Develop (i.e. design, build, test and verify) a high

75

Theoretical Estimates of HVAC Duct Channel Capacity for High-Speed Internet Access  

E-Print Network (OSTI)

Theoretical Estimates of HVAC Duct Channel Capacity for High-Speed Internet Access Ariton E. Xhafa-conditioning (HVAC) ducts based on multi-carrier transmission that uses M-QAM mod- ulation and measured channel- flections in HVAC ducts). Our work also shows that data rates in excess of 300 Mbps are possible over

Stancil, Daniel D.

76

Alkali slurry ozonation to produce a high capacity nickel battery material  

DOE Patents (OSTI)

A high capacity battery material is made, consisting essentially of hydrated Ni(II) hydroxide, and about 5 wt. % to about 40 wt. % of Ni(IV) hydrated oxide interlayer doped with alkali metal cations selected from potassium, sodium and lithium cations.

Jackovitz, John F. (Monroeville, PA); Pantier, Earl A. (Penn Hills, PA)

1984-11-06T23:59:59.000Z

77

Proof of Security of a High-Capacity Quantum Key Distribution Protocol  

E-Print Network (OSTI)

We prove the security of a high-capacity quantum key distribution protocol over noisy channels. By using entanglement purification protocol, we construct a modified version of the protocol in which we separate it into two consecutive stages. We prove their securities respectively and hence the security of the whole protocol.

Xiao-Wei Zhang; Kai Wen; Gui Lu Long

2005-12-25T23:59:59.000Z

78

Nanosheet-structured LiV3O8 with high capacity and excellent stability for high energy lithium batteries  

Science Conference Proceedings (OSTI)

Highly stable LiV3O8 with a nanosheet-structure was successfully prepared using polyethylene glycol (PEG) polymer in the precursor solution as the structure modifying agent, followed by calcination in air at 400oC, 450oC, 500oC, and 550oC. These materials provide the best electrochemical performance ever reported for LiV3O8 crystalline electrodes, with a specific discharge capacity of 260 mAh g-1 and no capacity fading over 100 cycles at 100 mA g-1. The excellent cyclic stability and high specific discharge capacity of the material are attributed to the novel nanosheets structure formed in LiV3O8. These LiV3O8 nanosheets are good candidates for cathode materials for high-energy lithium battery applications.

Pan, Anqiang; Zhang, Jiguang; Cao, Guozhong; Liang, Shu-quan; Wang, Chong M.; Nie, Zimin; Arey, Bruce W.; Xu, Wu; Liu, Dawei; Xiao, Jie; Li, Guosheng; Liu, Jun

2011-07-21T23:59:59.000Z

79

High capacity, reversible alloying reactions in SnSb/C nanocomposites for Na-ion battery applications  

Science Conference Proceedings (OSTI)

A new SnSb/C nanocomposite based on Na alloying reactions is demonstrated as anode for Na-ion battery applications. The electrode can achieve an exceptionally high capacity (544 mA h g{sup -1}, almost double that of intercalation carbon materials), good rate capacity and cyclability (80% capacity retention over 50 cycles) for Na-ion storage.

Xiao, Lifen; Cao, Yuliang; Xiao, Jie; Wang, Wei; Kovarik, Libor; Nie, Zimin; Liu, Jun

2012-04-04T23:59:59.000Z

80

Development of manufacturing capability for high-concentration, high-efficiency silicon solar cells  

DOE Green Energy (OSTI)

This report presents a summary of the major results from a program to develop a manufacturable, high-efficiency silicon concentrator solar cell and a cost-effective manufacturing facility. The program was jointly funded by the Electric Power Research Institute, Sandia National Laboratories through the Concentrator Initiative, and SunPower Corporation. The key achievements of the program include the demonstration of 26%-efficient silicon concentrator solar cells with design-point (20 W/cm{sup 2}) efficiencies over 25%. High-performance front-surface passivations; that were developed to achieve this result were verified to be absolutely stable against degradation by 475 days of field exposure at twice the design concentration. SunPower demonstrated pilot production of more than 1500 of these cells. This cell technology was also applied to pilot production to supply 7000 17.7-cm{sup 2} one-sun cells (3500 yielded wafers) that demonstrated exceptional quality control. The average efficiency of 21.3% for these cells approaches the peak efficiency ever demonstrated for a single small laboratory cell within 2% (absolute). Extensive cost models were developed through this program and calibrated by the pilot-production project. The production levels achieved indicate that SunPower could produce 7-10 MW of concentrator cells per year in the current facility based upon the cell performance demonstrated during the program.

Sinton, R.A.; Verlinden, P.J.; Crane, R.A.; Swanson, R.N. [SunPower Corp., Sunnyvale, CA (United States)

1996-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Silicon Based Anodes for Li-Ion Batteries  

SciTech Connect

Silicon is environmentally benign and ubiquitous. Because of its high specific capacity, it is considered one of the most promising candidates to replace the conventional graphite negative electrode used in today's Li ion batteries. Silicon has a theoretical specific capacity of nearly 4200 mAh/g (Li21Si5), which is 10 times larger than the specific capacity of graphite (LiC6, 372 mAh/g). However, the high capacity of silicon is associated with huge volume changes (more than 300 percent) when alloyed with lithium, which can cause severe cracking and pulverization of the electrode and lead to significant capacity loss. Significant scientific research has been conducted to circumvent the deterioration of silicon based anode materials during cycling. Various strategies, such as reduction of particle size, generation of active/inactive composites, fabrication of silicon based thin films, use of alternative binders, and the synthesis of 1-D silicon nanostructures have been implemented by a number of research groups. Fundamental mechanistic research has also been performed to better understand the electrochemical lithiation and delithiation process during cycling in terms of crystal structure, phase transitions, morphological changes, and reaction kinetics. Although efforts to date have not attained a commercially viable Si anode, further development is expected to produce anodes with three to five times the capacity of graphite. In this chapter, an overview of research on silicon based anodes used for lithium-ion battery applications will be presented. The overview covers electrochemical alloying of the silicon with lithium, mechanisms responsible for capacity fade, and methodologies adapted to overcome capacity degradation observed during cycling. The recent development of silicon nanowires and nanoparticles with significantly improved electrochemical performance will also be discussed relative to the mechanistic understanding. Finally, future directions on the development of silicon based anodes will be considered.

Zhang, Jiguang; Wang, Wei; Xiao, Jie; Xu, Wu; Graff, Gordon L.; Yang, Zhenguo; Choi, Daiwon; Li, Xiaolin; Wang, Deyu; Liu, Jun

2012-06-15T23:59:59.000Z

82

High-efficiency solar cells using HEM silicon  

DOE Green Energy (OSTI)

Developments in Heat Exchanger Method (HEM) technology for production of multicrystalline silicon ingot production have led to growth of larger ingots (55 cm square cross section) with lower costs and reliability in production. A single reusable crucible has been used to produce 18 multicrystalline 33 cm square cross section 40 kg ingots, and capability to produce 44 cm ingots has been demonstrated. Large area solar cells of 16.3% (42 cm{sup 2}) and 15.3% (100 cm{sup 2}) efficiency have been produced without optimization of the material production and the solar cell processing.

Khattak, C.P.; Schmid, F. [Crystal Systems, Inc., Salem, MA (United States); Schubert, W.K. [Sandia National Labs., Albuquerque, NM (United States)

1994-12-31T23:59:59.000Z

83

Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes  

SciTech Connect

Nanostructured ion beam-modified Ge electrodes fabricated directly on Ni current collector substrates were found to exhibit excellent specific capacities during electrochemical cycling in half-cell configuration with Li metal for a wide range of cycling rates. Structural characterization revealed that the nanostructured electrodes lose porosity during cycling but maintain excellent electrical contact with the metallic current collector substrate. These results suggest that nanostructured Ge electrodes have great promise for use as high performance Li ion battery anodes.

Rudawski, N. G.; Darby, B. L.; Yates, B. R.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Volinsky, A. A. [Department of Mechanical Engineering, University of South Florida, Tampa Florida 33620 (United States)

2012-02-20T23:59:59.000Z

84

NETL: A Low-Cost, High-Capacity Regenerable Sorbent for CO2 Capture From  

NLE Websites -- All DOE Office Websites (Extended Search)

A Low Cost, High Capacity Regenerable Sorbent for CO2 Capture from Existing Coal-Fired Power Plants A Low Cost, High Capacity Regenerable Sorbent for CO2 Capture from Existing Coal-Fired Power Plants Project No.: DE-FE0007580 TDA Research, Inc is developing a low cost, high capacity CO2 adsorbent and demonstrating its technical and economic viability for post-combustion CO2 capture for existing pulverized coal-fired power plants. TDA is using an advanced physical adsorbent to selectively remove CO2 from flue gas. The sorbent exhibits a much higher affinity to adsorb CO2 than N2, H2O or O2, enabling effective CO2 separation from the flue gas. The sorbent binds CO2 more strongly than common adsorbents, providing the chemical potential needed to remove the CO2, however, because CO2 does not form a true covalent bond with the surface sites, regeneration can be carried out with only a small energy input. The heat input to regenerate the sorbent is only 4.9 kcal per mol of CO2, which is much lower than that for chemical absorbents or amine based solvents.

85

New High Capacity Getter for Vacuum-Insulated Mobile Liquid Hydrogen Storage Systems  

DOE Green Energy (OSTI)

Current ''Non evaporable getters'' (NEGs), based on the principle of metallic surface sorption of gas molecules, are important tools for the improving the performance of many vacuum systems. High porosity alloys or powder mixtures of Zr, Ti, Al, V, Fe and other metals are the base materials for this type of getters. The continuous development of vacuum technologies has created new challenges for the field of getter materials. The main sorption parameters of the current NEGs, namely, pumping speed and sorption capacity, have reached certain upper limits. Chemically active metals are the basis of a new generation of NEGs. The introduction of these new materials with high sorption capacity at room temperature is a long-awaited development. These new materials enable the new generation of NEGs to reach faster pumping speeds, significantly higher sticking rates and sorption capacities up to 104 times higher during their lifetimes. Our development efforts focus on producing these chemically active metals with controlled insulation or protection. The main structural forms of our new getter materials are spherical powders, granules and porous multi-layers. The full pumping performance can take place at room temperature with activation temperatures ranging from room temperature to 650 C. In one of our first pilot projects, our proprietary getter solution was successfully introduced as a getter pump in a double-wall mobile LH2 tank system. Our getters were shown to have very high sorption capacity of all relevant residual gases, including H2. This new concept opens the opportunity for significant vacuum improvements, especially in the field of H2 pumping which is an important task in many different vacuum applications.

H. Londer; G. R. Myneni; P. Adderley; G. Bartlok; J. Setina; W. Knapp; D. Schleussner

2006-05-01T23:59:59.000Z

86

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells  

DOE Green Energy (OSTI)

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01T23:59:59.000Z

87

Research on stable, high-efficiency amorphous silicon multijunction modules  

DOE Green Energy (OSTI)

This report describes research on semiconductor and non-semiconductor materials to enhance the performance of multi-band-gap, multijunction panel with an area greater than 900 cm[sup 2] by 1992. Double-junction and triple-junction cells are mode on a Ag/ZnO back reflector deposited on stainless steel substrates. An a-SiGe alloy is used for the i-layer in the bottom and the middle cells; the top cell uses an amorphous silicon alloy. After the evaporation of an antireflection coating, silver grids and bus bars are put on the top surface and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a 1-ft[sup 2] monolithic module.

Guha, S. (United Solar Systems Corp., Troy, MI (United States))

1992-09-01T23:59:59.000Z

88

High velocity continuous-flow reactor for the production of solar grade silicon. Second quarterly report  

DOE Green Energy (OSTI)

The objective is to determine the feasibility of a high volume-high velocity continuous reduction reactor as an economical means for producing solar grade polycrystalline silicon. Preheated streams of hydrogen and bromosilanes are used as feed to the reduction reactor. Nucleation and deposition sites are provided by the additional feed of preheated silicon particles to the reactor. The effort has been directed at studying the chemistry taking place in the reactor, determining the factors which influence its course, and making necessary reactor modifications as dictated by observed results. The initial reactor design has been extensively changed. Energy losses due to gas expansion in the nozzle/mixer section of the reactor dictated these design changes. A ''Tee'' configuration, in which the two preheated gas streams are merged at right angles without any expansion, has replaced the nozzle/mixer. Results of the hydrogen reduction of tetrabromosilane with and without the use of silicon deposition substrate particles are analyzed.

Woerner, L.

1978-03-01T23:59:59.000Z

89

Influence Of Ultrasonic Waves On The Formation Of High Pores Silicon Carbide  

SciTech Connect

The Challenge to produce a quality Silicon Carbide that combination high surface area is promising and this material can be used in many application such as Hydrogen storage materials. Synthesis of high surface area carbon materials by selective etching of Silicon Carbide with choric acid while exposing ultrasonic wave have been made.Powder Of Sic (surface area 17.8 m{sup 2}/g) was treated in the chloric acetic as well as their mixture of various compositions and various time exposure of ultrasonic waves. Surface area and pore size can be controlled by temperature and concentration composition of Chloric and time exposure of ultrasonic wave.The resultant carbon and carbon-silicon carbide composite powders were characterized X-ray diffraction and Electron microscope. To determine a conversion degree of silicon carbide due to influence of the ultrasonic wave, the samples were annealed in open air at 1000 deg. C. There by carbon component of the carbon/silicon carbide composite was completely oxidized. The analysis of the samples shows the strong influence of time exposure of ultrasonic waves on the formation of pores.

Toana, Musfirah C. F. [Physics Dept. University of Tadulako (Indonesia); Soegijono, B.; Hikam, M. [Physics Dept. University of Indonesia (Indonesia)

2009-09-14T23:59:59.000Z

90

Ultra-high hydrogen storage capacity of Li-decorated graphyne: A first-principles prediction  

SciTech Connect

Graphyne, consisting of sp- and sp{sup 2}-hybridized carbon atoms, is a new member of carbon allotropes which has a natural porous structure. Here, we report our first-principles calculations on the possibility of Li-decorated graphyne as a hydrogen storage medium. We predict that Li-doping significantly enhances the hydrogen storage ability of graphyne compared to that of pristine graphyne, which can be attributed to the polarization of H{sub 2} molecules induced by the charge transfer from Li atoms to graphyne. The favorite H{sub 2} molecules adsorption configurations on a single side and on both sides of a Li-decorated graphyne layer are determined. When Li atoms are adsorbed on one side of graphyne, each Li can bind four H{sub 2} molecules, corresponding to a hydrogen storage capacity of 9.26 wt. %. The hydrogen storage capacity can be further improved to 15.15 wt. % as graphyne is decorated by Li atoms on both sides, with an optimal average binding energy of 0.226 eV/H{sub 2}. The results show that the Li-decorated graphyne can serve as a high capacity hydrogen storage medium.

Zhang Hongyu; Zhang Meng; Zhao Lixia; Luo Youhua [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Zhao Mingwen; Bu Hongxia; He Xiujie [School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 Shandong (China)

2012-10-15T23:59:59.000Z

91

Development and Testing of a High Capacity Plasma Chemical Reactor in the Ukraine  

SciTech Connect

This project, Development and Testing of a High Capacity Plasma Chemical Reactor in the Ukraine was established at the Kharkiv Institute of Physics and Technology (KIPT). The associated CRADA was established with Campbell Applied Physics (CAP) located in El Dorado Hills, California. This project extends an earlier project involving both CAP and KIPT conducted under a separate CRADA. The initial project developed the basic Plasma Chemical Reactor (PCR) for generation of ozone gas. This project built upon the technology developed in the first project, greatly enhancing the output of the PCR while also improving reliability and system control.

Reilly, Raymond W.

2012-07-30T23:59:59.000Z

92

Integration of functional epitaxial oxides into silicon: from high-k application to nanostructures  

Science Conference Proceedings (OSTI)

We will present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly. Experimental results ... Keywords: Gadolinium oxide, Heterostructures, High-k material, Molecular beam epitaxy

H. J. Osten; M. Czernohorsky; R. Dargis; A. Laha; D. Kühne; E. Bugiel; A. Fissel

2007-09-01T23:59:59.000Z

93

Programmatic status of NASA`s CSTI high capacity power Stirling Space Power Converter Program  

DOE Green Energy (OSTI)

An overview is presented of the NASA Lewis Research Center Free-Piston Stirling Space Power Converter Technology Development Program. This work is being conducted under NASA`s Civil Space Technology Initiative (CSTI). The goal of the CSTI High Capacity Power element is to develop the technology base needed to meet the long duration, high capacity power requirements for future NASA space initiatives. Efforts are focused upon increasing system thermal and electric energy conversion efficiency at least fivefold over current SP-100 technology, and on achieving systems that are compatible with space nuclear reactors. This paper will discuss the status of test activities with the Space Power Research Engine (SPRE). Design deficiencies are gradually being corrected and the power converter is now outputting 11.5 kWe at a temperature ratio of 2 (design output is 12.5 kWe). Detail designs have been completed for the 1050 K Component Test Power Converter (CTPC). The success of these and future designs is dependent upon supporting research and technology efforts including heat pipes, gas bearings, superalloy joining technologies and high efficiency alternators. This paper also provides an update of progress in these technologies.

Dudenhoefer, J.E.

1994-09-01T23:59:59.000Z

94

Planar silicon fabrication process for high-aspect-ratio micromachined parts  

SciTech Connect

Surface-micromachined silicon inertial sensors are limited to relatively high-G applications in part because of the fundamental limitations on proof mass imposed by the manufacturing technology. At the same time, traditional micromolding technologies such as LIGA do not lend themselves to integration with electronics, a capability which is equally necessary for high-performance inertial sensors. The silicon micromolding processes described in this report promise to offer both larger proof masses and integrability with on-chip electronics. In Sandia`s silicon micromolding process, the proof mass is formed using a mold which is first recessed into the substrate using a deep silicon trench etch, then lined with a sacrificial or etch-stop layer, and filled with mechanical polysilicon. Since the mold is recessed into the substrate, the whole micromechanical structure can be formed, planarized, and integrated with standard silicon microelectronic circuits before the release etch. In addition, unlike surface-micromachined parts, the thickness of the molded parts is limited by the depth of the trench etch (typically 10--50 {micro}m) rather than the thickness of deposited polysilicon (typically 2 {micro}m). The fact that the high-aspect-ratio section of the device is embedded in the substrate enables the monolithic integration of high-aspect-ratio parts with surface-micromachined mechanical parts, and, in the future, also electronics. The authors anticipate that such an integrated mold/surface micromachining/electronics process will offer versatile high-aspect-ratio micromachined structures that can be batch-fabricated and monolithically integrated into complex microelectromechanical systems including high-performance inertial sensing systems.

Barron, C.C.; Fleming, J.G. [Sandia National Labs., Albuquerque, NM (United States). Microelectronics Development Lab.

1997-09-01T23:59:59.000Z

95

High temperature Hexoloy{trademark} SX silicon carbide. Final report  

SciTech Connect

HEXOLOY{reg_sign} SX-SiC, fabricated with Y and Al containing compounds as sintering aids, has been shown to possess significantly improved strength and toughness over HEXOLOY{reg_sign}SA-SiC. This study was undertaken to establish and benchmark the complete mechanical property database of a first generation material, followed by a process optimization task to further improve the properties. Mechanical characterization on the first generation material indicated that silicon-rich pools, presumably formed as a reaction product during sintering, controlled the strength from room temperature to 1,232 C. At 1,370 C in air, the material was failing due to a glass-phase formation at the surface. This glass-phase formation was attributed to the reaction of yttrium aluminates, which exist as a second phase in the material, with the ambient. This process was determined to be a time-dependent one that leads to slow crack growth. Fatigue experiments clearly indicated that the slow crack growth driven by the reaction occurred only at temperatures >1,300 C, above the melting point of the glass phase. Process optimization tasks conducted included the selection of the best SiC powder source, studies on mixing/milling conditions for SiC powder with the sintering aids, and a designed experiment involving a range of sintering and post-treatment conditions. The optimization study conducted on the densification variables indicated that lower sintering temperatures and higher post-treatment pressures reduce the Si-rich pool formation, thereby improving the room-temperature strength. In addition, it was also determined that furnacing configuration and atmosphere were critical in controlling the Si-rich formation.

Srinivasan, G.V.; Lau, S.K.; Storm, R.S. [Carborundum Co., Niagara Falls, NY (United States)

1994-09-01T23:59:59.000Z

96

An Insect Herbivore Microbiome with High Plant Biomass-Degrading Capacity  

SciTech Connect

Herbivores can gain indirect access to recalcitrant carbon present in plant cell walls through symbiotic associations with lignocellulolytic microbes. A paradigmatic example is the leaf-cutter ant (Tribe: Attini), which uses fresh leaves to cultivate a fungus for food in specialized gardens. Using a combination of sugar composition analyses, metagenomics, and whole-genome sequencing, we reveal that the fungus garden microbiome of leaf-cutter ants is composed of a diverse community of bacteria with high plant biomass-degrading capacity. Comparison of this microbiome?s predicted carbohydrate-degrading enzyme profile with other metagenomes shows closest similarity to the bovine rumen, indicating evolutionary convergence of plant biomass degrading potential between two important herbivorous animals. Genomic and physiological characterization of two dominant bacteria in the fungus garden microbiome provides evidence of their capacity to degrade cellulose. Given the recent interest in cellulosic biofuels, understanding how large-scale and rapid plant biomass degradation occurs in a highly evolved insect herbivore is of particular relevance for bioenergy.

Suen, Garret; Barry, Kerrie; Goodwin, Lynne; Scott, Jarrod; Aylward, Frank; Adams, Sandra; Pinto-Tomas, Adrian; Foster, Clifton; Pauly, Markus; Weimer, Paul; Bouffard, Pascal; Li, Lewyn; Osterberger, Jolene; Harkins, Timothy; Slater, Steven; Donohue, Timothy; Currie, Cameron; Tringe, Susannah G.

2010-09-23T23:59:59.000Z

97

Active devices for high temperature microcircuitry. [Silicon and gallium arsenide devices  

DOE Green Energy (OSTI)

As part of a program to develop high temperature electronics for geothermal well instrumentation, a number of solid state diode and transistor types were characterized from room temperature to 300/sup 0/C. The temperature dependence and aging stability of transport and leakage properties were measured. Included in the study were silicon diodes, bipolar transistors, JFETs, MOSFETs, and GaAs MESFETs and JFETs. In summary the results are: diodes and bipolar transistors became extremely leaky at high temperature and are therefore of limited use; silicon MOSFETs and GaAs devices showed unacceptable aging instabilities at high temperatures; silicon JFETs from certain manufacturers were sufficiently stable and had suitable temperature dependent characteristics so that operational circuits could be made. Comparisons were made of experimental device characteristics and those predicted by theory. The theoretical calculations were done using standard equations revised to include appropriate temperature dependent parameters. Close agreement between theory and experiment was found, indicating that unexpected high temperature effects were insignificant. In order to facilitate the use of devices in high temperature hybrids, it was necessary to develop bonding and prescreening techniques. A large variance of JFET 300/sup 0/C operating parameters was found even within a single production lot. Consequently, high temperature prescreening allowed each circuit to be specifically ''pretuned.'' Standard solder, epoxy, and chip and wire attachment technologies were not functional at 300/sup 0/C. Gold-germanium solder, aluminum wire to DuPont 9910 gold film, and diffusion barrier pads were developed to allow high temperature attachment.

Palmer, D.W.; Draper, B.L.; McBrayer, J.D.; White, K.R.

1978-02-01T23:59:59.000Z

98

Low Cost, High Efficiency Tandem Silicon Solar Cells and LEDs  

Wladek Walukiewicz, Joel Ager, and Kin Man Yu of Berkeley Lab have developed high-efficiency solar cells that leverage the well-established design and ...

99

High Temperature Universal Silicon on Insulator (SOI) Gate Drive  

higher current drive, on-chip regulation capacitors, and more space efficient and robust on-chip layout. ... •Development of high temperature galvanic isolation

100

Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

DOE Green Energy (OSTI)

Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

Goodrich, A.; Woodhouse, M.; Hacke, P.

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Development of high-efficiency silicon solar cells and modeling the impact of system parameters on levelized cost of electricity .  

E-Print Network (OSTI)

??The objective of this thesis is to develop low-cost high-efficiency crystalline silicon solar cells which are at the right intersection of cost and performance to… (more)

Kang, Moon Hee

2013-01-01T23:59:59.000Z

102

Towards a new high technology development in the Silicon Valley : a 21st century urban design vision  

E-Print Network (OSTI)

Santa Clara Valley, perhaps better known as the Silicon Valley, is currently facing many problems and uncertainties. The explosion of the high technology industry has changed the regional scene faster than anyone could ...

Pang, Jonathan K. (Jonathan Kam)

1988-01-01T23:59:59.000Z

103

Spare capacity reprovisioning for high availability shared backup path protection connections  

Science Conference Proceedings (OSTI)

Shared backup path protection (SBPP) has been widely studied in the Generalized MPLS (GMPLS) networks due to its efficient spare capacity sharing as well as simplicity and flexibility in service provisioning. This paper presents a novel availability ... Keywords: End-to-end availability, Generalized multi-protocol label switching (GMPLS), Shared backup path protection (SBPP), Spare capacity reprovisioning

Qi Guo; Pin-Han Ho; Hsiang-Fu Yu; Janos Tapolcai; Hussein T. Mouftah

2010-03-01T23:59:59.000Z

104

Rapid thermal processing of high-efficiency silicon solar cells with controlled in-situ annealing  

DOE Green Energy (OSTI)

Silicon solar cell efficiencies of 17.1%, 16.4%, 14.8%, and 14.9% have been achieved on FZ, Cz, multicrystalline (mc-Si), and dendritic web (DW) silicon, respectively, using simplified, cost-effective rapid thermal processing (RTP). These represent the highest reported efficiencies for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. Appropriate diffusion temperature coupled with the added in-situ anneal resulted in suitable minority-carrier lifetime and diffusion profiles for high-efficiency cells. The cooling rate associated with the in-situ anneal can improve the lifetime and lower the reverse saturation current density (J{sub 0}), however, this effect is material and base resistivity specific. PECVD antireflection (AR) coatings provided low reflectance and efficient front surface and bulk defect passivation. Conventional cells fabricated on FZ silicon by furnace diffusions and oxidations gave an efficiency of 18.8% due to greater short wavelength response and lower J{sub 0}.

Doshi, P.; Rohatgi, A.; Ropp, M.; Chen, Z. [Georgia Institute of Technology, Atlanta, GA (United States). Univ. Center of Excellence for Photovoltaics Research and Education; Ruby, D. [Sandia National Labs., Albuquerque, NM (United States); Meier, D.L. [EBARA Solar, Inc., Large, PA (United States)

1995-01-01T23:59:59.000Z

105

Silicon-Polymer Encapsulation of High-Level Calcine Waste for Transportation or Disposal  

SciTech Connect

This report presents the results of an experimental study investigating the potential uses for silicon-polymer encapsulation of High Level Calcine Waste currently stored within the Idaho Nuclear Technology and Engineering Center (INTEC) at the Idaho National Engineering and Environmental Laboratory (INEEL). The study investigated two different applications of silicon polymer encapsulation. One application uses silicon polymer to produce a waste form suitable for disposal at a High Level Radioactive Waste Disposal Facility directly, and the other application encapsulates the calcine material for transportation to an offsite melter for further processing. A simulated waste material from INTEC, called pilot scale calcine, which contained hazardous materials but no radioactive isotopes was used for the study, which was performed at the University of Akron under special arrangement with Orbit Technologies, the originators of the silicon polymer process called Polymer Encapsulation Technology (PET). This document first discusses the PET process, followed by a presentation of past studies involving PET applications to waste problems. Next, the results of an experimental study are presented on encapsulation of the INTEC calcine waste as it applies to transportation or disposal of calcine waste. Results relating to long-term disposal include: (1) a characterization of the pilot calcine waste; (2) Toxicity Characteristic Leaching Procedure (TCLP) testing of an optimum mixture of pilot calcine, polysiloxane and special additives; and, (3) Material Characterization Center testing MCC-1P evaluation of the optimum waste form. Results relating to transportation of the calcine material for a mixture of maximum waste loading include: compressive strength testing, 10-m drop test, melt testing, and a Department of Transportation (DOT) oxidizer test.

G. G. Loomis; C. M. Miller; J. A. Giansiracusa; R. Kimmel; S. V. Prewett

2000-01-01T23:59:59.000Z

106

Structural originations of irreversible capacity loss from highly lithiated copper oxides  

SciTech Connect

We use electrochemistry, high-energy X-ray diffraction (XRD) with pair-distribution function analysis (PDF), and density functional theory (DFT) to study the instabilities of Li{sub 2}CuO{sub 2} at varying state of charge. Rietveld refinement of XRD patterns revealed phase evolution from pure Li{sub 2}CuO{sub 2} body-centered orthorhombic (Immm) space group to multiphase compositions after cycling. The PDF showed CuO{sub 4} square chains with varying packing during electrochemical cycling. Peaks in the G(r) at the Cu-O distance for delithiated, LiCuO{sub 2}, showed CuO{sub 4} square chains with reduced ionic radius for Cu in the 3+ state. At full depth of discharge to 1.5 V, CuO was observed in fractions greater than the initial impurity level which strongly affects the reversibility of the lithiation reactions contributing to capacity loss. DFT calculations showed electron removal from Cu and O during delithiation of Li{sub 2}CuO{sub 2}.

Love, Corey T.; Dmowski, Wojtek; Johannes, Michelle D.; Swider-Lyons, Karen E. (Tennessee-K); (NRL)

2012-02-07T23:59:59.000Z

107

High-rate deposition of hydrogenated amorphous silicon films and devices  

DOE Green Energy (OSTI)

This report summarizes the status of high-rate deposition technologies associated with amorphous silicon thin films for photovoltaic applications. The report lists (1) deposition rates for a-Si:H films according to source and method and (2) efficiencies and other parameters of a-Si:H solar cells. Two main deposition source materials, silane and disilane, are discussed, as well as effects of boron doping. The effects of various deposition parameters on film characteristics and on deposition rate are presented, as well as the effects of annealing on high-deposition-rate films. Light-induced effects are also discussed. Finally, progress and problems in this field of study are summarized.

Luft, W.

1987-04-01T23:59:59.000Z

108

A Low Cost, High Capacity Regenerable Sorbent for Pre-combustion CO{sub 2} Capture  

SciTech Connect

The overall objective of the proposed research is to develop a low cost, high capacity CO{sub 2} sorbent and demonstrate its technical and economic viability for pre-combustion CO{sub 2} capture. The specific objectives supporting our research plan were to optimize the chemical structure and physical properties of the sorbent, scale-up its production using high throughput manufacturing equipment and bulk raw materials and then evaluate its performance, first in bench-scale experiments and then in slipstream tests using actual coal-derived synthesis gas. One of the objectives of the laboratory-scale evaluations was to demonstrate the life and durability of the sorbent for over 10,000 cycles and to assess the impact of contaminants (such as sulfur) on its performance. In the field tests, our objective was to demonstrate the operation of the sorbent using actual coal-derived synthesis gas streams generated by air-blown and oxygen-blown commercial and pilot-scale coal gasifiers (the CO{sub 2} partial pressure in these gas streams is significantly different, which directly impacts the operating conditions hence the performance of the sorbent). To support the field demonstration work, TDA collaborated with Phillips 66 and Southern Company to carry out two separate field tests using actual coal-derived synthesis gas at the Wabash River IGCC Power Plant in Terre Haute, IN and the National Carbon Capture Center (NCCC) in Wilsonville, AL. In collaboration with the University of California, Irvine (UCI), a detailed engineering and economic analysis for the new CO{sub 2} capture system was also proposed to be carried out using Aspen PlusTM simulation software, and estimate its effect on the plant efficiency.

Alptekin, Gokhan

2012-09-30T23:59:59.000Z

109

High Wind Penetration Impact on U.S. Wind Manufacturing Capacity...  

NLE Websites -- All DOE Office Websites (Extended Search)

steel demanded by eliminating the gearbox. Assuming 1400 kgMW copper for a direct drive generator with permanent magnets, 579 GW of capacity would require 782,000 tonnes of...

110

High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005  

DOE Green Energy (OSTI)

The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

Guha, S.; Yang, J.

2005-10-01T23:59:59.000Z

111

GENERATING CAPACITY  

E-Print Network (OSTI)

Evidence from the U.S. and some other countries indicates that organized wholesale markets for electrical energy and operating reserves do not provide adequate incentives to stimulate the proper quantity or mix of generating capacity consistent with mandatory reliability criteria. A large part of the problem can be associated with the failure of wholesale spot market prices for energy and operating reserves to rise to high enough levels during periods when generating capacity is fully utilized. Reforms to wholesale energy markets, the introduction of well-design forward capacity markets, and symmetrical treatment of demand response and generating capacity resources to respond to market and institutional imperfections are discussed. This policy reform program is compatible with improving the efficiency of spot wholesale electricity markets, the continued evolution of competitive retail markets, and restores incentives for efficient investment in generating capacity consistent with operating reliability criteria applied by system operators. It also responds to investment disincentives that have been associated with volatility in wholesale energy prices, limited hedging opportunities and to concerns about regulatory opportunism. 1

Paul L. Joskow; Paul L. Joskow; Paul L. Joskow

2006-01-01T23:59:59.000Z

112

High-aspect-ratio silicon-cell metallization technical status report. Final report  

DOE Green Energy (OSTI)

Two features of the silicon concentrator solar cell are addressed which affect output at high concentration levels. The first is the development of narrow but high electroplated grid lines with improved conductivity. The object is a reduction in cell series resistance without increase in shadowing. This goal is accomplished by electroplating through a thick photo resist mask to produce lines .7 mil wide by .7 mil high. Advance pulse plating techniques are combined with pure silver plating baths to produce a deposit conductivity equal to the bulk silver conductivity (a 1.5 to 2 X improvement over conventional silver plating). The second feature is a double diffused selectively textured front surface. This development employs a deep diffusion in the silicon under the grid lines. Only the non grid line open area is selectively texture etched removing the deep junction. This open textured area is then given a second shallow diffusion for optimum cell efficiency. This selective procedure maintains the original highly polished wafer surface under the grid lines so that high resolution narrow grid lines are possible. The double diffusion protects the junction from metal diffusion while enabling the optimum shallow junction in the illuminated regions. Combining these two features has produced a large area concentrator cells (8 cm/sup 2/) with peak efficiency above 16% and exhibiting a broad peak efficiency extending from 50 to 175 suns above 15%.

Not Available

1982-01-01T23:59:59.000Z

113

Silicon sheet with molecular beam epitaxy for high efficiency solar cells. Final technical report, March 22, 1982-April 30, 1984  

DOE Green Energy (OSTI)

A two-year program has been carried out for the Jet Propulsion Laboratory in which the UCLA silicon MBE facility has been used to attempt to grow silicon solar cells of high efficiency. MBE ofers the potential of growing complex and arbitrary doping profiles with 10 A depth resolution. It is the only technique taht can readily grow built-in front and back surface fields of any desired depth and value in silicon solar cells, or the more complicated profiles needed for a double junction cascade cell, all in silicon, connected in series by a tunnel junction. Although the dopant control required for such structures has been demonstrated in silicon by UCLA, crystal quality at the p-n junctions is still too poor to allow the other advantages to be exploited. Results from other laboratories indicate that this problem will soon be overcome. A computer analysis of the double cascade all in silicon shows that efficiencies can be raised over that of any single silicon cell by 1 or 2%, and that open circuit voltage of almost twice that of a single cell should be possible.

Not Available

1984-01-01T23:59:59.000Z

114

Effect of high temperature hydrogenation on the fracture strength of a sintered alpha silicon carbide  

DOE Green Energy (OSTI)

The effect of high temperature hydrogenation on the strength of a pressureless sintered alpha silicon carbide was studied as a function of time. Samples were soaked in argon or a hydrogen-argon mixture (40:60, mole %) at 1400/sup 0/C for times of up to 50 hours. The samples were then broken in four point flexure at room temperature. It was found that the hydrogen attacked the material at grain boundaries, leaving loose SiC grains on the surface. Fifty hours in a hydrogenous atmosphere at 1400/sup 0/C caused an average 26% strength decrease. Surface degradation was evaluated using optical and scanning electron microscopy.

Jero, P.D.

1985-01-01T23:59:59.000Z

115

Cyclic plasticity and shakedown in high-capacity electrodes of lithium-ion batteries Laurence Brassart, Kejie Zhao, Zhigang Suo  

E-Print Network (OSTI)

Cyclic plasticity and shakedown in high-capacity electrodes of lithium-ion batteries Laurence for lithium-ion batteries. Upon absorbing a large amount of lithium, the electrode swells greatly rights reserved. 1. Introduction Rechargeable lithium-ion batteries are energy-storage systems of choice

Suo, Zhigang

116

Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon. Quarterly progress report, April--June 1978. Low cost silicon solar array project  

DOE Green Energy (OSTI)

The purpose of the silane production program is to determine the feasibility and practicality of high-volume, low-cost production of silane (SiH/sub 4/) as an intermediate for obtaining solar-grade silicon metal. The process is based on the synthesis of SiH/sub 4/ by the catalytic disproportionation of chlorosilanes resulting from the reaction of hydrogen, metallurgical silicon, and silicon tetrachloride. The goal is to demonstrate the feasibility of a silane production cost of under $4.00/kg at a production rate of 1000 MT/year. The objective of the silicon production program is to establish the feasibility and cost of manufacturing semiconductor grade polycrystalline silicon through the pyrolysis of silane. The silane-to-silicon conversion is to be investigated in a fluid bed reactor and in a free space reactor. The process design program is to provide JPL with engineering and economic parameters for an experimental unit sized for 25 metric tons of silicon per year and a product-cost estimate for silicon produced on a scale of 100 metric tons per year. The purpose of the capacitive fluid-bed heating program is to explore the feasibility of using electrical capacitive heating to control the fluidized silicon-bed temperature during the heterogeneous decomposition of silane. In addition, a theoretical fluid-bed silicon deposition model was developed for use in the design of a fluid-bed pyrolysis scheme. Progress is reported in each of these areas. (WHK)

Breneman, W.C.; Farrier, E.G.; Morihara, H.

1978-01-01T23:59:59.000Z

117

Development of Regenerable High Capacity Boron Nitrogen Hydrides as Hydrogen Storage Materials  

DOE Green Energy (OSTI)

The objective of this three-phase project is to develop synthesis and hydrogen extraction processes for nitrogen/boron hydride compounds that will permit exploitation of the high hydrogen content of these materials. The primary compound of interest in this project is ammonia-borane (NH{sub 3}BH{sub 3}), a white solid, stable at ambient conditions, containing 19.6% of its weight as hydrogen. With a low-pressure on-board storage and an efficient heating system to release hydrogen, ammonia-borane has a potential to meet DOE's year 2015 specific energy and energy density targets. If the ammonia-borane synthesis process could use the ammonia-borane decomposition products as the starting raw material, an efficient recycle loop could be set up for converting the decomposition products back into the starting boron-nitrogen hydride. This project is addressing two key challenges facing the exploitation of the boron/nitrogen hydrides (ammonia-borane), as hydrogen storage material: (1) Development of a simple, efficient, and controllable system for extracting most of the available hydrogen, realizing the high hydrogen density on a system weight/volume basis, and (2) Development of a large-capacity, inexpensive, ammonia-borane regeneration process starting from its decomposition products (BNHx) for recycle. During Phase I of the program both catalytic and non-catalytic decomposition of ammonia borane are being investigated to determine optimum decomposition conditions in terms of temperature for decomposition, rate of hydrogen release, purity of hydrogen produced, thermal efficiency of decomposition, and regenerability of the decomposition products. The non-catalytic studies provide a base-line performance to evaluate catalytic decomposition. Utilization of solid phase catalysts mixed with ammonia-borane was explored for its potential to lower the decomposition temperature, to increase the rate of hydrogen release at a given temperature, to lead to decomposition products amenable for regeneration, and direct catalytic hydrogenation of the decomposition products. Two different approaches of heating ammonia-borane are being investigated: (a) 'heat to material approach' in which a fixed compartmentalized ammonia-borane is heated by a carefully controlled heating pattern, and (b) 'material to heat approach' in which a small amount of ammonia-borane is dispensed at a time in a fixed hot zone. All stages of AB decomposition are exothermic which should allow the small 'hot zone' used in the second approach for heating to be self-sustaining. During the past year hydrogen release efforts focused on the second approach determining the amount of hydrogen released, kinetics of hydrogen release, and the amounts of impurities released as a function of AB decomposition temperature in the 'hot zone.'

Damle, A.

2010-02-03T23:59:59.000Z

118

High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane  

SciTech Connect

The deposition rate, electronic and optical properties of hydrogenated amorphous silicon films prepared from rf glow discharge decomposition of disilane (Si/sub 2/H/sub 6/) diluted in helium have been measured. These films show excellent electrical and optical properties and, most importantly, a high deposition rate coupled with satisfactory solar cell application was realized for the first time. At a deposition rate of 11 A/s, 5.47% and 6.5% conversion efficiencies were obtained with a first trial of n-i-p type solar cells deposited on SnO/sub 2//ITO glass and metal substrates, respectively.

Ohashi, Y.; Kenne, J.; Konagai, M.; Takahashi, K.

1983-06-15T23:59:59.000Z

119

Silicon Ink for High-Efficiency Solar Cells Captures a Share of the Market (Fact Sheet)  

DOE Green Energy (OSTI)

Fact sheet on 2011 R&D 100 Award winner Silicon Ink. Liquid silicon has arrived, and with it comes a power boost for solar cells and dramatic cost savings for cell manufacturers.

Not Available

2011-08-01T23:59:59.000Z

120

High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995  

DOE Green Energy (OSTI)

The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

Maruska, P. [Spire Corp., Bedford, MA (United States)

1996-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

DEVELOPMENT OF A MONITORING AND MEASUREMENT PLATFORM FOR UKLIGHT HIGH-CAPACITY NETWORK  

E-Print Network (OSTI)

capacity experimental network. The proposed system will record data flow and topological information on specific flows for other UKLight users · Provide Grid Service based access to archive data[3] System Line Card Line Card Grid Probe Grid Probe Compression Online Storage R/TMonitoring www Offline Storage

Haddadi, Hamed

122

Fully-depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon  

E-Print Network (OSTI)

layer capped by indium tin oxide and silicon dioxide. Thisand ? 600 ? of indium tin oxide (ITO) A is deposited [27].

Holland, Stephen E.; Groom, Donald E.; Palaio, Nick P.; Stover, Richard J.; Wei, Mingzhi

2002-01-01T23:59:59.000Z

123

Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule  

SciTech Connect

The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

Emanuel Sachs Tonio Buonassisi

2013-01-16T23:59:59.000Z

124

High Quality Factor Silicon Cantilever Driven by PZT Actuator for Resonant Based Mass Detection  

E-Print Network (OSTI)

A high quality factor (Q-factor) piezoelectric lead zirconat titanate (PZT) actuated single crystal silicon cantilever was proposed in this paper for resonant based ultra-sensitive mass detection. Energy dissipation from intrinsic mechanical loss of the PZT film was successfully compressed by separating the PZT actuator from resonant structure. Excellent Q-factor, which is several times larger than conventional PZT cantilever, was achieved under both atmospheric pressure and reduced pressures. For a 30 micrometer-wide 100 micrometer-long cantilever, Q-factor was measured as high as 1113 and 7279 under the pressure of 101.2 KPa and 35 Pa, respectively. Moreover, it was found that high-mode vibration can be realized by the cantilever for the pursuit of great Q-factor, while support loss became significant because of the increased vibration amplitude at the actuation point. An optimized structure using node-point actuation was suggested then to suppress corresponding energy dissipation.

Lu, Jian; Zhang, Yi; Mihara, Takashi; Itoh, Toshihiro; Maeda, Ryutaro

2008-01-01T23:59:59.000Z

125

High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003  

DOE Green Energy (OSTI)

The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

Rand, J. A.; Culik, J. S.

2005-10-01T23:59:59.000Z

126

High-efficiency silicon solar cells for use with a prismatic cover at 160 suns  

DOE Green Energy (OSTI)

For this program, Solarex developed a process sequence that could be used in a manufacturing environment to produce high-efficiency silicon concentrator cells. The cells had large gridlines to minimize series resistance losses and a prismatic cover to minimize shadowing. The front surface of the cell was textured to improve absorption of light and passivated to reduce front-surface recombination. Two separate diffusions steps were used: a deep emitter with a light surface concentration and a heavy diffusion to reduce recombination under the front contacts. Cell efficiencies as high as 22.25% were demonstrated at 75 suns and over 21.5% at 150 suns air mass 1.5 illumination. 16 refs., 31 figs., 10 tabs.

Silver, J.R.; Patel, B. (Solarex Corp., Rockville, MD (USA))

1990-08-01T23:59:59.000Z

127

K-shell spectroscopy of silicon ions as diagnostic for high electric fields  

Science Conference Proceedings (OSTI)

We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in {mu}m thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hamos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the instrument and background free spectra. This approach will be used in future experiments to study electric fields of the order of TV/m at high density plasmas close to solid density.

Loetzsch, R.; Jaeckel, O.; Hoefer, S.; Kaempfer, T.; Uschmann, I.; Kaluza, M. C. [Helmholtz-Institut Jena, Helmholtzweg 4, D-07743 Jena (Germany); Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Polz, J. [Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Foerster, E. [Helmholtz-Institut Jena, Helmholtzweg 4, D-07743 Jena (Germany); Stambulchik, E.; Kroupp, E.; Maron, Y. [Faculty of Physics, Weizmann Institute of Science, P.O. Box 26, Rehovot 76100 (Israel)

2012-11-15T23:59:59.000Z

128

High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane  

SciTech Connect

The optical and electrical properties of hydrogenated amorphous silicon films produced by rf glow discharge decomposition of disilane diluted in helium (Si/sub 2/H/sub 6//He = 1/9) have been studied while systematically varying the film deposition rate. The properties and composition of the films were monitored by measuring the optical band gap, IR vibrational spectrum, dark conductivity, and the photoconductivity as a function of the deposition rate. The photoluminescence of the high deposition rate films gave a peak at 1.33 eV. These films, whose properties are rather similar to those of the conventional a-Si:H films prepared from monosilane, have been used to fabricate nip-type a-Si:H solar cells. At a deposition rate of 11 A/sec, a conversion efficiency of 6.86% was obtained. This high efficiency shows that disilane is applicable for mass production fabrication of a-Si:H solar cells.

Kenne, J.; Ohashi, Y.; Matsushita, T.; Konagai, M.; Takahashi, K.

1984-01-15T23:59:59.000Z

129

Research on the basic understanding of high efficiency in silicon solar cells. Annual report, 1 December 1982-30 November 1983  

DOE Green Energy (OSTI)

This report presents results of research designed to develop a basic understanding of high-efficiency silicon solar cells and achieve cell efficiencies greater than 17% by employing innovative concepts of material preparation, cell design, and fabrication technology. The research program consisted of a theoretical effort to develop models for very high-efficiency cell designs, experimental verification of the designs, and improved understanding of efficiency-limiting mechanisms such as heavy doping effects and bulk and surface recombination. Research was performed on high-lifetime float-zone silicon, the baseline materials, low-resistivity gallium-doped czochralski silicon, and boron-doped float-zone silicon.

Rohatgi, A.; Rai-Choudhury, P.

1984-09-01T23:59:59.000Z

130

Conductive Rigid Skeleton Supported Silicon as High-Performance Li-Ion Battery Anodes  

Science Conference Proceedings (OSTI)

A cost effective and scalable method is developed to prepare a core-shell structured Si/B4C composite with graphite coating with high efficiency, exceptional rate performance and long-term stability. In this material, conductive B4C with high Mohs hardness serves not only as micro-/nano- millers in the ball-milling process to break down micron-sized Si but also as the conductive rigid skeleton to support the in-situ formed sub-10 nm Si particles to alleviate the volume expansion during charge/discharge. The Si/B4C composite is coated with a few graphitic layers to further improve the conductivity and stability of the composite. The Si/B4C/graphite (SBG) composite anode shows excellent cyclability with a specific capacity of ~822 mAh?g-1 (based on the weight of the entire electrode, including binder and conductive carbon) and ~94% capacity retention over 100 cycles at 0.8C rate. This new structure has the potential to provide adequate storage capacity and stability for practical applications, and good opportunity for large scale manufacturing using commercially available materials and technologies.

Chen, Xilin; Li, Xiaolin; Ding, Fei; Xu, Wu; Xiao, Jie; Cao, Yuliang; Meduri, Praveen; Liu, Jun; Graff, Gordon L.; Zhang, Jiguang

2012-08-08T23:59:59.000Z

131

Fluoride-Salt-Cooled High-Temperature Reactor (FHR) with Silicon-Carbide-Matrix Coated-Particle Fuel  

Science Conference Proceedings (OSTI)

The FHR is a new reactor concept that uses coated-particle fuel and a low-pressure liquid-salt coolant. Its neutronics are similar to a high-temperature gas-cooled reactor (HTGR). The power density is 5 to 10 times higher because of the superior cooling properties of liquids versus gases. The leading candidate coolant salt is a mixture of {sup 7}LiF and BeF{sub 2} (FLiBe) possessing a boiling point above 1300 C and the figure of merit {rho}C{sub p} (volumetric heat capacity) for the salt slightly superior to water. Studies are underway to define a near-term base-line concept while understanding longer-term options. Near-term options use graphite-matrix coated-particle fuel where the graphite is both a structural component and the primary neutron moderator. It is the same basic fuel used in HTGRs. The fuel can take several geometric forms with a pebble bed being the leading contender. Recent work on silicon-carbide-matrix (SiCm) coated-particle fuel may create a second longer-term fuel option. SiCm coated-particle fuels are currently being investigated for use in light-water reactors. The replacement of the graphite matrix with a SiCm creates a new family of fuels. The first motivation behind the effort is to take advantage of the superior radiation resistance of SiC compared to graphite in order to provide a stable matrix for hosting coated fuel particles. The second motivation is a much more rugged fuel under accident, repository, and other conditions.

Forsberg, C. W. [Massachusetts Institute of Technology (MIT); Terrani, Kurt A [ORNL; Snead, Lance Lewis [ORNL; Katoh, Yutai [ORNL

2012-01-01T23:59:59.000Z

132

Design of indoor communication infrastructure for ultra-high capacity next generation wireless services  

E-Print Network (OSTI)

identification (RFID) tags to wirelessly track all manner of things. In 2009 alone over 2.4 billion RFID tags were produced [4]. The growth in the use of mobile devices, wireless internet devices and RFID tags is summarised in Figure 1.1. The increasing size... . Finally, the design of DAS to support emerging wireless protocols, such as 802.11ac, that have large numbers of MIMO streams (4-8) is considered. In such cases, capacity is best enhanced by sending multiple MIMO streams to single remote locations...

Gordon, George S. D.

2013-11-12T23:59:59.000Z

133

High energy bursts from a solid state laser operated in the heat capacity limited regime  

DOE Patents (OSTI)

Solid state laser technology is a very well developed field and numerous embodiments and modes of operation have been demonstrated. A more recent development has been the pumping of a solid state laser active medium with an array of diode lasers (diode pumping, for short). These diode pump packages have previously been developed to pump solid state lasers with good efficiency, but low average power. This invention is a method and the resulting apparatus for operating a solid state laser in the heat capacity mode. Instead of cooling the laser, the active medium will heat up until it reaches some maximum acceptable temperature. The waste heat is stored in the active medium itself.

Albrecht, G.; George, E.V.; Krupke, W. [and others

1994-12-31T23:59:59.000Z

134

High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon  

DOE Green Energy (OSTI)

The authors performed a detailed study to examine the limiting performance available using photovoltaic-grade Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations.The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-{micro}s bulk lifetimes and 17.6%-efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures.

Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States). Photovoltaic System Components Dept.; King, R.R.; Mitchell, K.W. [Siemens Solar Industries, Camarillo, CA (United States)

1996-12-01T23:59:59.000Z

135

Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules  

SciTech Connect

The primary objective of this subcontract is to develop the technology for same bandgap, amorphous silicon tandem junction photovoltaic modules having an area of at least 900 cm{sup 2} with the goal of achieving an aperture area efficiency of 9%. A further objective is to demonstrate modules that retain 95% of their under standard light soaking conditions. Our approach to the attainment of these objective is based on the following distinctive technologies: (a) in-house deposition of SiO{sub 2}/SnO{sub 2}:F onto soda lime glass by APCVD to provide a textured, transparent electrode, (b) single chamber r.f. flow discharge deposition of the a-Si:H layers onto vertical substrates contained with high package density in a box carrier'' to which the discharge is confined (c) sputter deposition of highly reflecting, ZnO-based back contacts, and (d) laser scribing of the a-Si:H and electrodes with real-time scribe tracking to minimize area loss. Continued development of single junction amorphous silicon was aggressively pursued as proving ground for various optical enhancement schemes, new p-layers, and i-layers quality. We have rigorously demonstrated that the introduction of a transitional i-layer does not impair stability and that the initial gain in performance is retained. We have demonstrated a small improvement in cell stability through a post-fabrication treatment consisting of multiple, intense light flashes followed by sufficient annealing. Finally, several experiments have indicated that long term stability can be improved by overcoating the SnO{sub 2} with ZnO. 25 refs., 17 figs.

Delahoy, A.E.; Tonon, T.; Macneil, J. (Chronar Corp., Princeton, NJ (USA))

1991-06-01T23:59:59.000Z

136

Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules  

DOE Green Energy (OSTI)

The primary objective of this subcontract is to develop the technology for same bandgap, amorphous silicon tandem junction photovoltaic modules having an area of at least 900 cm{sup 2} with the goal of achieving an aperture area efficiency of 9%. A further objective is to demonstrate modules that retain 95% of their under standard light soaking conditions. Our approach to the attainment of these objective is based on the following distinctive technologies: (a) in-house deposition of SiO{sub 2}/SnO{sub 2}:F onto soda lime glass by APCVD to provide a textured, transparent electrode, (b) single chamber r.f. flow discharge deposition of the a-Si:H layers onto vertical substrates contained with high package density in a box carrier'' to which the discharge is confined (c) sputter deposition of highly reflecting, ZnO-based back contacts, and (d) laser scribing of the a-Si:H and electrodes with real-time scribe tracking to minimize area loss. Continued development of single junction amorphous silicon was aggressively pursued as proving ground for various optical enhancement schemes, new p-layers, and i-layers quality. We have rigorously demonstrated that the introduction of a transitional i-layer does not impair stability and that the initial gain in performance is retained. We have demonstrated a small improvement in cell stability through a post-fabrication treatment consisting of multiple, intense light flashes followed by sufficient annealing. Finally, several experiments have indicated that long term stability can be improved by overcoating the SnO{sub 2} with ZnO. 25 refs., 17 figs.

Delahoy, A.E.; Tonon, T.; Macneil, J. (Chronar Corp., Princeton, NJ (USA))

1991-06-01T23:59:59.000Z

137

Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation  

SciTech Connect

A key feature of silicon photomultipliers (SiPMs) that can hinder their wider use in medium and high energy physics applications is their relatively high sensitivity to high energy background radiation, with particular regard to high energy neutrons. Dosages of 1010 neq/cm2 can damage them severely. In this study, some standard versions along with some new formulations are irradiated with a high intensity 241AmBe source up to a total dose of 5 × 109 neq/cm2. Key parameters monitored include dark noise, photon detection efficiency (PDE), gain, and voltage breakdown. Only dark noise was found to change significantly for this range of dosage. Analysis of the data indicates that within each vendor's product line, the change in dark noise is very similar as a function of increasing dose. At present, the best strategy for alleviating the effects of radiation damage is to cool the devices to minimize the effects of increased dark noise with accumulated dose.

Barbosa, Fernando J. [JLAB; McKisson, John E. [JLAB; Qiang, Yi [JLAB; Steinberger, William [JLAB; Xi, Wenze [JLAB; Zorn, Carl J. [JLAB

2012-11-01T23:59:59.000Z

138

On the capacity limits of hvac duct channel for high-speed internet access  

E-Print Network (OSTI)

Abstract—In this paper, we report theoretical and experimental channel-capacity estimates of heating, ventilation, and air conditioning (HVAC) ducts based on multicarrier transmission that uses-ary quadrature amplitude modulation and measured channel responses at the 2.4-GHz industrial, scientific, and medical band. It is shown theoretically that data rates in excess of 1 Gb/s are possible over distances up to 500 m in straight ducts in which reflections have been suppressed. Our experimental results also show that even in the case of more complex HVAC duct networks (i.e., HVAC duct networks that include bends, tees, etc.) data rates over 2 Gb/s are possible. Our estimations in this case are valid for distances of up to 22 m, which was the maximum distance of our experimental setup. These experimental results, measured with a large-scale testbed set

Ariton E. Xhafa; Ozan K. Tonguz; Ahmet G. Cepni; Student Member; Daniel D. Stancil; Pavel V. Nikitin; Dagfin Brodtkorb

2005-01-01T23:59:59.000Z

139

Coke Gasification - A Solution to Excess Coke Capacity and High Energy Costs  

E-Print Network (OSTI)

United States crude slate is becoming heavier and generally higher in sulfur. At the same time demand of distillate products is increasing. Refiners are reworking their plans to include resid conversion via coking and approximately 230,000 BPD of new coking capacity is either under construction or announced. Even if 50 percent of the coke produced is exported, there will be an excess capacity of coke selling at less than $30/ton depending upon the sulfur content. This coke can be gasified effectively to produce medium-Btu (300 Btu/scf) gas which, in turn, can fuel the refinery furnaces to replace natural gas. Coke gasification should prove economical with natural gas price decontrol and the average price projected to rise to over $14.0 per million Btu in 1990. The paper will discuss three gasifiers - Gesellschaft fur Kohle-Technologie Gmbh (GKT), Texaco and Westinghouse which may be used for the production of medium-Btu gas from coke. The design parameters, which for coke gasification may be different from coal gasification because of the difference in physical and chemical characteristics of coke and coal, will be evaluated. Conceptual design will be performed based upon normal fuel requirements of about 20 billion Btu per day for a typical 50,000 BPD refinery. Adaptability of coke derived gas to refinery fuel systems will be discussed in terms of flame temperatures, flue gas volumes, derating and required furnace modifications. Estimates of capital and operating costs will be obtained to calculate the gas cost using the new tax laws. Finally, the GKT gasifier will be compared to the developing Texaco and Westinghouse gasifiers to assess the effect of second generation gasifiers on the economics of coke gasification.

Patel, S. S.

1982-01-01T23:59:59.000Z

140

LIFE CYCLE ANALYSIS OF HIGH-PERFORMANCE MONOCRYSTALLINE SILICON PHOTOVOLTAIC SYSTEMS: ENERGY PAYBACK TIMES AND NET ENERGY PRODUCTION VALUE  

E-Print Network (OSTI)

LIFE CYCLE ANALYSIS OF HIGH-PERFORMANCE MONOCRYSTALLINE SILICON PHOTOVOLTAIC SYSTEMS: ENERGY and other countries. Higher efficiencies are produced by innovative cell designs and material and energy% more electricity than average efficiency (i.e., 14%) c-Si PV modules. Keywords: Photovoltaic, energy

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof  

DOE Patents (OSTI)

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Sarin, V.K.

1990-08-21T23:59:59.000Z

142

Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon. Low Cost Silicon Solar Array Project. Quarterly progress report, January--March 1978  

DOE Green Energy (OSTI)

The purpose of the silane production program is to determine the feasibility and practicality of high-volume, low-cost production of silane (SiH/sub 4/) as an intermediate for obtaining solar-grade silicon metal. The process is based on the synthesis of SiH/sub 4/ by the catalytic disproportionation of chlorosilanes resulting from the reaction of hydrogen, metallurgical silicon, and silicon tetrachloride. The goal is to demonstrate the feasibility of a silane production cost of under $4.00/kg at a production rate of 1000 MT/year. The objective of the silicon production program is to establish the viability and economic feasibility of manufacturing semiconductor-grade polycrystalline silicon through the pyrolysis of silane. The silane-to-silicon conversion is to be investigated in a fluid bed reactor and a free space reactor. The purpose of the process design program is to provide JPL with engineering and economic parameters for an experimental facility capable of producing 25 metric tons of silicon per year by the pyrolysis of silane gas. An ancillary purpose is to estimate the cost of silicon produced by the same process on a scale of 1000 metric tons per year. The capacitive fluid-bed heating program is exploring the feasibility of utilizing electrical capacitive heating to control the fluidized silicon bed temperature during the heterogeneous decomposition of silane. In addition, a theoretical fluid-bed silicon deposition model is being developed to be used in a design of a fluid-bed pyrolysis process scheme. Research progress is described in detail. (WHK)

Breneman, W.C.; Farrier, E.G.; Morihara, H.

1978-01-01T23:59:59.000Z

143

Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon. Low cost silicon solar array project. Quarterly progress report for July--September 1978  

DOE Green Energy (OSTI)

The project is divided into four tasks: silane production, silicon production, process design, and fluid-bed pyrolysis R and D. The purpose of the silane production task is to determine the feasibility and practicality of high-volume, low-cost production of silane (SiH/sub 4/) as an intermediate for obtaining solar-grade silicon metal. The process is based on the synthesis of SiH/sub 4/ by the catalytic disproportionation of chlorosilanes resulting from the reaction of hydrogen, metallurgical silicon, and silicon tetrachloride. The goal is to demonstrate the feasibility of a silane production cost of under $4.00/kg at a production rate of 1000 MT/year. The objective of the silicon production task is to establish the feasibility and cost of manufacturing semi-conductor grade polycrystalline silicon through the pyrolysis of silane (SiH/sub 4/). The silane-to-silicon conversion is to be investigated in a fluid bed reactor and in a free-space reactor. The process design task is to provide JPL with engineering and economic parameters for an experimental unit sized for 25 metric tons of silicon per year and a product-cost estimate for silicon produced on a scale of 1000 metric tons per year. The purpose of fluid-bed pyrolysis task is to explore the feasibility of using electrical capacitive heating to control the fluidized silicon-bed temperature during the heterogeneous decomposition of silane and to further explore the behavior of a fluid bed. These basic studies will form part of the information necessary to assess technical feasibility of the fluid-bed pyrolysis of silane. Status of these tasks are reported. (WHK)

Breneman, W.C.; Farrier, E.G.; Morihara, H.

1978-01-01T23:59:59.000Z

144

Silicon detectors for the next generation of high energy physics experiments: expected degradation  

E-Print Network (OSTI)

There exists an enormous interest for the study of very high energy domain in particle physics, both theoretically and experimentally, in the aim to construct a general theory of the fundamental constituents of matter and of their interactions. Until now, semiconductor detectors have widely been used in modern high energy physics experiments. They are elements of the high resolution vertex and tracking system, as well as of calorimeters. The main motivation of this work is to discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion voltage, eventually up to breakdown, and thus affecting the lifetime of detector systems. In this paper, physical phenomena that conduce to the degradation of the detector are discussed and effects are analysed at the device level (leakage current and effective carrier concentration) in the radiation environments expected in the next generation of hadron colliders after LHC, at the next lepton and gamma-gamma colliders, as well as in astroparticle experiments, in conditions of long time continuum irradiations, for different technological options. The predicted results permit a better decision to obtain devices with harder parameters to radiation.

I. Lazanu; S. Lazanu

2005-12-31T23:59:59.000Z

145

Electrochemically Induced High Capacity Displacement Reaction of PEO/MoS2/Graphene Nanocomposites with Lithium  

SciTech Connect

MoS2/PEO/graphene composite is successfully prepared and the discharge mechanism of MoS2 as an anode material for Li-ion batteries has been investigated systematically in this work. The simultaneous formation of Li2S and Mo at deep discharge depth has been shown for the first time. The deposition of Mo metal with Li residing on the defects after the first discharge increases the intrinsic electronic conductivity of the electrode leading to a superior cycling stability for over 185 cycles. After the first discharge the amorphous Mo matrix allows a large amount of Li+ ions to repeatedly deposit and being oxidized during cycling while the transition between Li2S and S contribute to the capacity above 2.0 V. The interactions between as-formed Mo and S prevents the dissolution of the intermediate polysulfide thus providing clues to immobilize the soluble species in a Li-S battery. Excellent rate performances are achieved in this MoS2/PEO/graphene composite indicating a fast diffusion path of Li+ ions existing not only in the bulk material but also in the interface between the electrode and the electrolyte.

Xiao, Jie; Wang, Xaojian; Yang, Xiao-Qing; Xun, Shidi; Liu, Gao; Koech, Phillip K.; Liu, Jun; Lemmon, John P.

2011-08-09T23:59:59.000Z

146

Fabrication of high aspect ratio silicon nanostructure arrays by metal-assisted etching  

E-Print Network (OSTI)

The goal of this research was to explore and understand the mechanisms involved in the fabrication of silicon nanostructures using metal-assisted etching. We developed a method utilizing metal-assisted etching in conjunction ...

Chang, Shih-wei, Ph.D. Massachusetts Institute of Technology

2010-01-01T23:59:59.000Z

147

High-efficiency one-sun photovoltaic module demonstration using solar-grade CZ silicon. Final report  

DOE Green Energy (OSTI)

This work was performed jointly by Sandia National Laboratories (Albuquerque, NM) and Siemens Solar Industries (Camarillo, CA) under a Cooperative Research and Development Agreement (CRADA 1248). The work covers the period May 1994 to March 1996. The purpose of the work was to explore the performance potential of commercial, photovoltaic-grade Czochralski (Cz) silicon, and to demonstrate this potential through fabrication of high-efficiency cells and a module. Fabrication of the module was omitted in order to pursue further development of advanced device structures. The work included investigation of response of the material to various fabrication processes, development of advanced cell structures using the commercial material, and investigation of the stability of Cz silicon solar cells. Some important achievements of this work include the following: post-diffusion oxidations were found to be a possible source of material contamination; bulk lifetimes around 75 pts were achieved; efficiencies of 17.6% and 15.7% were achieved for large-area cells using advanced cell structures (back-surface fields and emitter wrap-through); and preliminary investigations into photodegradation in Cz silicon solar cells found that oxygen thermal donors might be involved. Efficiencies around 20% should be possible with commercial, photovoltaic-grade silicon using properly optimized processes and device structures.

Gee, J.M.

1996-10-01T23:59:59.000Z

148

Modelling and simulation of high capacity waterside container handling systems at deep-sea terminals  

Science Conference Proceedings (OSTI)

Current handling systems at deep-sea container terminals run into their physical limits and new methods of handling containers are needed to deal with the ever-growing container shipping volumes. We present a domain specific simulation model of high ... Keywords: adjustable simulation model, container handling system, container workflow, productivity improvement, quay crane concepts

F. Geldof; B. C. van Haarlem; W. Lock; E. E. Roubtsova

2008-04-01T23:59:59.000Z

149

Research on stable, high-efficiency, large-area amorphous silicon based modules -- Task B  

DOE Green Energy (OSTI)

This report documents progress in developing a stable, high- efficiency, four-terminal hybrid tandem module. The module consists of a semi-transparent, thin-film silicon:hydrogen alloy (TFS) top circuit and a copper indium diselenide (CuInSe{sub 2}) bottom circuit. Film deposition and patterning processes were successfully extended to 0.4-m{sup 2} substrates. A 33.2-W (8.4% efficient) module with a 3970-cm{sup 2} aperture area and a white back reflector was demonstrated; without the back reflector, the module produced 30.2 W (7.6% efficient). Placing a laminated, 31.6-W, 8.1%-efficient CuInSe{sub 2} module underneath this TFS module, with an air gap between the two, produces 11.2 W (2.9% efficient) over a 3883-cm{sup 2} aperture area. Therefore, the four-terminal tandem power output is 41.4 W, translating to a 10.5% aperture-area efficiency. Subsequently, a 37.8-W (9.7% aperture-area efficiency) CuInSe{sub 2} module was demonstrated with a 3905-cm{sup 2} aperture area. Future performances of single-junction and tandem modules of this size were modeled, and predicted power outputs exceed 50 W (13% efficient) for CuInSe{sub 2} and 65 W (17% efficient) for TFS/CuInSe{sub 2} tandem modules.

Mitchell, K.W.; Willet, D.R. (Siemens Solar Industries, Camarillo, CA (USA))

1990-10-01T23:59:59.000Z

150

Simulation of Device Parameters of High Efficiency Multicrystalline Silicon Solar Cells  

Science Conference Proceedings (OSTI)

The results of the simulation of the reported experimental results of high efficiency multicrystalline silicon (mc-Si) solar cells, using PC1D software, are reported in this study. Results obtained by various groups have been incorporated and compared in this study. The highest efficiency reported so far for mc-Si solar cells is 20{center_dot}4% and 17-18% by research laboratories and commercial houses, respectively. The efficiency can be further enhanced if passivation characteristics on both the front and back surface are improved. The role of back surface recombination has become more significant in light of the use of thin mc-Si wafers by the solar cell industry. Based on the passivation characteristics and considering the understanding of the past three decades of studies, the authors have proposed and simulated a structure for mc-Si solar cells to improve the performance of the same. The results of our modeled structure of mc-Si solar cell show an efficiency of 21{center_dot}88% with short-circuit current density, J{sub sc} = 39{center_dot}39 mA/cm2, and open circuit voltage, V{sub oc} = 0{center_dot}666 V.

Budhraja, V.; Misra, D.; Ravindra, N. M.

2011-11-01T23:59:59.000Z

151

A capital equipment capacity planning methodology for aerospace parts manufacturing in a high-mix, low volume environment  

E-Print Network (OSTI)

A static capacity planning model was developed and tested following a four-phased framework. This model was developed for the purposes of capital planning for capacity requirements at a large aerospace parts manufacturing ...

Reveley, Matthew A. (Matthew Aaron)

2012-01-01T23:59:59.000Z

152

Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199  

Science Conference Proceedings (OSTI)

The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

Ginley, D.

2013-01-01T23:59:59.000Z

153

Certification challenges in the development of an innovative high payload capacity spent fuel transportation cask  

SciTech Connect

The design approach and certification strategy used in the development of an innovative transportation cask for legal weight truck shipments of spent nuclear fuel is presented. The proposed approach represents a significant departure from conventional cask designs in that it uses titanium alloy, a material with a high strength-to-weight ratio which has no precedent in transportation cask certification. The significant increase in payload obtainable with the proposed approach, and the associated benefits such as reduced life cycle costs, lower personnel exposure, and lower transportation accident risks are discussed. 8 refs., 3 figs., 1 tab.

Mair, B.R.; Severson, M.J.; Ciez, A.P. (Westinghouse Electric Corp., Pittsburgh, PA (USA))

1990-01-01T23:59:59.000Z

154

Criticality safety and shielding design issues in the development of a high-capacity cask for truck transport  

SciTech Connect

General Atomics (GA) will be submitting an application for certification to the US Nuclear Regulatory Commission (NRC) for the GA-4 and GA-9 Casks In 1992. The GA-4 and GA-9 Casks are high-capacity legal weight truck casks designed to transport light water reactor spent fuel assemblies. To maintain a capacity of four pressurized-water-reactor (PWR) spent fuel assemblies, the GA-4 Cask uses burnup credit as part of the criticality control for initial enrichments over 3.0 wt% U-235. Using the US Department of Energy (DOE) Burnup Credit Program as a basis, GA has performed burnup credit analysis which is included in the Safety Analysis Report for Packaging (SARP). The GA-9 Cask can meet the criticality safety requirements using the ``fresh fuel`` assumption. Our approach to shielding design is to optimize the GA-4 and GA-9 Cask shielding configurations for minimum weights and maximum payloads. This optimization involves the use of the most effective shielding material, square cross-section geometry with rounded corners and tapered neutron shielding sections in the non-fuel regions.

Boshoven, J.K.

1992-08-01T23:59:59.000Z

155

Criticality safety and shielding design issues in the development of a high-capacity cask for truck transport  

Science Conference Proceedings (OSTI)

General Atomics (GA) will be submitting an application for certification to the US Nuclear Regulatory Commission (NRC) for the GA-4 and GA-9 Casks In 1992. The GA-4 and GA-9 Casks are high-capacity legal weight truck casks designed to transport light water reactor spent fuel assemblies. To maintain a capacity of four pressurized-water-reactor (PWR) spent fuel assemblies, the GA-4 Cask uses burnup credit as part of the criticality control for initial enrichments over 3.0 wt% U-235. Using the US Department of Energy (DOE) Burnup Credit Program as a basis, GA has performed burnup credit analysis which is included in the Safety Analysis Report for Packaging (SARP). The GA-9 Cask can meet the criticality safety requirements using the fresh fuel'' assumption. Our approach to shielding design is to optimize the GA-4 and GA-9 Cask shielding configurations for minimum weights and maximum payloads. This optimization involves the use of the most effective shielding material, square cross-section geometry with rounded corners and tapered neutron shielding sections in the non-fuel regions.

Boshoven, J.K.

1992-01-01T23:59:59.000Z

156

Mechanism for high hydrogen storage capacity on metal-coated carbon nanotubes: A first principle analysis  

Science Conference Proceedings (OSTI)

The hydrogen adsorption and binding mechanism on metals (Ca, Sc, Ti and V) decorated single walled carbon nanotubes (SWCNTs) are investigated using first principle calculations. Our results show that those metals coated on SWCNTs can uptake over 8 wt% hydrogen molecules with binding energy range -0.2--0.6 eV, promising potential high density hydrogen storage material. The binding mechanism is originated from the electrostatic Coulomb attraction, which is induced by the electric field due to the charge transfer from metal 4s to 3d. Moreover, we found that the interaction between the H{sub 2}-H{sub 2} further lowers the binding energy. - Graphical abstract: Five hydrogen molecules bound to individual Ca decorated (8, 0) SWCNT : a potential hydrogen-storage material. Highlights: Black-Right-Pointing-Pointer Each transition metal atom can adsorb more than four hydrogen molecules. Black-Right-Pointing-Pointer The interation between metal and hydrogen molecule is electrostatic coulomb attraction. Black-Right-Pointing-Pointer The electric field is induced by the charge transfer from metal 4s to metal 3d. Black-Right-Pointing-Pointer The adsorbed hydrogen molecules which form supermolecule can further lower the binding energy.

Lu, Jinlian; Xiao, Hong [Department of Physics and Institute for nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan Province 411105 (China)] [Department of Physics and Institute for nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan Province 411105 (China); Cao, Juexian, E-mail: jxcao@xtu.edu.cn [Department of Physics and Institute for nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan Province 411105 (China)] [Department of Physics and Institute for nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan Province 411105 (China)

2012-12-15T23:59:59.000Z

157

Solar Cell Silicon  

Science Conference Proceedings (OSTI)

... continued and costs have been cut dramatically along the production value chain. The most important feedstock for crystalline solar cells is high purity silicon .

158

Black Conductive Titanium Oxide High-Capacity Materials for Battery Electrodes  

DOE Green Energy (OSTI)

Stoichiometric titanium dioxide (TiO{sub 2}) is one of the most widely studied transitionmetal oxides because of its many potential applications in photoelectrochemical systems, such as dye-sensitized TiO{sub 2} electrodes for photovoltaic solar cells, and water-splitting catalysts for hydrogen generation, and in environmental purification for creating or degrading specific compounds. However, TiO{sub 2} has a wide bandgap and high electrical resistivity, which limits its use as an electrode. A set of non-stoichiometric titanium oxides called the Magneli phases, having a general formula of Ti{sub n}O{sub 2n-1} with n between 4 and 10, exhibits lower bandgaps and resistivities, with the highest electrical conductivities reported for Ti{sub 4}O{sub 7}. These phases have been formulated under different conditions, but in all reported cases the resulting oxides have minimum grain sizes on the order of micrometers, regardless of the size of the starting titanium compounds. In this method, nanoparticles of TiO{sub 2} or hydrogen titanates are first coated with carbon using either wet or dry chemistry methods. During this process the size and shape of the nanoparticles are 'locked in.' Subsequently the carbon-coated nanoparticles are heated. This results in the transformation of the original TiO{sub 2} or hydrogen titanates to Magneli phases without coarsening, so that the original size and shape of the nanoparticles are maintained to a precise degree. People who work on batteries, fuel cells, ultracapacitors, electrosynthesis cells, electro-chemical devices, and soil remediation have applications that could benefit from using nanoscale Magneli phases of titanium oxide. Application of these electrode materials may not be limited to substitution for TiO{sub 2} electrodes. Combining the robustness and photosensitivity of TiO{sub 2} with higher electrical conductivity may result in a general electrode material.

Han, W.

2011-05-18T23:59:59.000Z

159

The effects of concentrated ultraviolet light on high-efficiency silicon solar cells  

DOE Green Energy (OSTI)

The importance of stability in the performance of solar cells is clearly recognized as fundamental. Some of the highest efficiency silicon solar cells demonstrated to date, such as the Point Contact solar cell and the Passivated Emitter solar cell, rely upon the passivation of cell surfaces in order to minimize recombination, which reduces cell power output. Recently, it has been shown that exposure to ultraviolet (UV) light of wavelengths present in the terrestrial solar spectrum can damage a passivating silicon-oxide interface and increase recombination. In this study, we compared the performance of Point Contact and Passivated Emitter solar cells after exposure to UV light. We also examined the effect of UV exposure on oxide-passivated silicon wafers. We found that current Passivated Emitter designs are stable at both one-sun and under concentrated sunlight. The evolution of Point Contact concentrator cell performance shows a clear trend towards more stable cells. 15 refs., 18 figs.

Ruby, D.S.; Schubert, W.K.

1991-01-01T23:59:59.000Z

160

High-silicon {sup 238}PuO{sub 2} fuel characterization study: Half module impact tests  

SciTech Connect

The General-Purpose Heat Source (GPHS) provides power for space missions by transmitting the heat of [sup 238]Pu decay to an array of thermoelectric elements. The modular GPHS design was developed to address both survivability during launch abort and return from orbit. Previous testing conducted in support of the Galileo and Ulysses missions documented the response of GPHSs to a variety of fragment- impact, aging, atmospheric reentry, and Earth-impact conditions. The evaluations documented in this report are part of an ongoing program to determine the effect of fuel impurities on the response of the heat source to conditions baselined during the Galileo/Ulysses test program. In the first two tests in this series, encapsulated GPHS fuel pellets containing high levels of silicon were aged, loaded into GPHS module halves, and impacted against steel plates. The results show no significant differences between the response of these capsules and the behavior of relatively low-silicon fuel pellets tested previously.

Reimus, M.A.H.

1997-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Porous silicon optical cavity structure applied to high sensitivity organic solvent sensor  

Science Conference Proceedings (OSTI)

The present work reports the thermal annealing process, the number of layer and electrochemical process effect in the optical response quality of Bragg and microcavity devices that were applied as organic solvent sensors. These devices have been obtained ... Keywords: Microcavities, Optical sensors, Photonic crystal, Porous silicon

Danilo R. Huanca; Francisco J. Ramirez-Fernandez; Walter J. Salcedo

2008-03-01T23:59:59.000Z

162

High-speed digitization readout of silicon photomultipliers for time of flight positron emission tomography  

Science Conference Proceedings (OSTI)

We report on work to develop a system with about 100 picoseconds (ps) time resolution for time of flight positron emission tomography [TOF-PET]. The chosen photo detectors for the study were Silicon Photomultipliers (SiPM's). This study was based on extensive experience in studying timing properties of SiPM's. The readout of these devices used the commercial high speed digitizer DRS4. We applied different algorithms to get the best time resolution of 155 ps Guassian (sigma) for a LYSO crystal coupled to a SiPM. We consider the work as a first step in building a prototype TOF-PET module. The field of positron-emission-tomography (PET) has been rapidly developing. But there are significant limitations in how well current PET scanners can reconstruct images, related to how fast data can be acquired, how much volume they can image, and the spatial and temporal resolution of the generated photons. Typical modern scanners now include multiple rings of detectors, which can image a large volume of the patient. In this type of scanner, one can treat each ring as a separate detector and require coincidences only within the ring, or treat the entire region viewed by the scanner as a single 3 dimensional volume. This 3d technique has significantly better sensitivity since more photon pair trajectories are accepted. However, the scattering of photons within the volume of the patient, and the effect of random coincidences limits the technique. The advent of sub-nanosecond timing resolution detectors means that there is potentially much better rejection of scattered photon events and random coincidence events in the 3D technique. In addition, if the timing is good enough, then the origin of photons pairs can be determined better, resulting in improved spatial resolution - so called 'Time-of-Flight' PET, or TOF-PET. Currently a lot of activity has occurred in applications of SiPMs for TOF-PET. This is due to the devices very good time resolution, low profile, lack of high voltage needed, and their non-sensitivity to magnetic fields. While investigations into this technique have begun elsewhere, we feel that the extensive SiPM characterization and data acquisition expertise of Fermilab, and the historical in-depth research of PET imaging at University of Chicago will combine to make significant strides in this field. We also benefit by a working relationship with the SiPM producer STMicroelectronics (STM).

Ronzhin, A.; Los, S.; Martens, M.; Ramberg, E.; /Fermilab; Kim, H.; Chen, C.; Kao, C.; /Chicago U.; Niessen, K.; /SUNY, Buffalo; Zatserklyaniy, A.; /Puerto Rico U., Mayaguez; Mazzillo, M.; Carbone, B.; /SGS Thomson, Catania

2011-02-01T23:59:59.000Z

163

Low cost silicon solar array project, silicon materials task. Establishment of the feasibility of a process capable of low-cost, high-volume production of silane (Step I) and the pyrolysis of silane to semiconductor-grade silicon (Step II). Quarterly progress report, October--December 1977. [Silicon tetrachlorides  

DOE Green Energy (OSTI)

Kinetics and equilibria for the hydrogenation of silicon tetrachloride have shown that conversion to trichlorosilane is substantially increased at higher operating pressures; these results greatly improve the practicality of the overall process. An integrated process development unit for converting metallurgical silicon and hydrogen to high-purity silane has been commissioned. A quartz fluid-bed reactor capable of operating at temperatures of up to 1000/sup 0/C was designed, constructed, and successfully operated. A total of 6.7 Kg of silicon powder was produced in two separate experiments in the free-space reactor without opening the reactor between experiments. No measurable impurities were detected in the silicon powder produced by the free-space reactor, using the cathode layer emission spectroscopic technique. A 152 mm-diameter melt consolidation apparatus was attached to the free-space reactor. The first objective for the overall process was the definition of a preliminary set of functional specifications. All process design efforts are based on these specifications. Preliminary block flow diagrams and heat and material balances for every battery-limit stream were completed for the 25 MT/year experimental facility. A brief parametric study was conducted to select an optimum range of operating pressures for the distillation columns. Conceptual designs have been initiated for the hydrogenation reactor, the free-space reactor, and the consolidation system.

Breneman, W.C.; Cheung, H.; Farrier, E.G.; Morihara, H.

1977-01-01T23:59:59.000Z

164

Effect of small additions of silicon, iron, and aluminum on the room-temperature tensile properties of high-purity uranium  

DOE Green Energy (OSTI)

Eleven binary and ternary alloys of uranium and very low concentrations of iron, silicon, and aluminum were prepared and tested for room-temperature tensile properties after various heat treatments. A yield strength approximately double that of high-purity derby uranium was obtained from a U-400 ppM Si-200 ppM Fe alloy after beta solution treatment and alpha aging. Higher silicon plus iron alloy contents resulted in increased yield strength, but showed an unacceptable loss of ductility.

Ludwig, R.L.

1983-11-14T23:59:59.000Z

165

Novel silicon fabrication process for high-aspect-ratio micromachined parts  

Science Conference Proceedings (OSTI)

Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold process, the mold is recessed into the substrate using a deep silicon trench etch, lined with a sacrificial or etch-stop layer, and then filled with any of a number of mechanical materials. The completed structures are not ejected from the mold to be used as piece parts rather, the mold is dissolved from around selected movable segments of the parts, leaving the parts anchored to the substrate. Since the mold is recessed into the substrate, the whole micromechanical structure can be formed, planarized, and integrated with standard silicon microelectronic circuits before the release etch. In addition, unlike surface-micromachined parts, the thickness of the molded parts is limited by the depth of the trench etch (typically 10--50 {mu}m) rather than the thickness of deposited polysilicon (typically 2 {mu}m). The capability of fabricating thicker (and therefore much stiffer and more massive) parts is critical for motion-sensing structures involving large gimballed platforms, proof masses, etc.

Fleming, J.G.; Barron, C.C.

1995-08-01T23:59:59.000Z

166

High Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology, Final Technical Report, 6 March 1998 - 15 October 2001  

DOE Green Energy (OSTI)

This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate with a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.

Guha, S.

2001-11-08T23:59:59.000Z

167

High-Cycle Fatigue of Single-Crystal Silicon Thin Films  

E-Print Network (OSTI)

When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film ( 20 m thick) single crystal silicon specimens were tested to failure in a controlled air environment (30 0.1 C, 50 2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1 10 6 to 1 10 11 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation. [642] Index Terms---Fatigue failure, MEMS devices, single-crystal silicon, thin films.

Christopher L. Muhlstein; Stuart B. Brown; Robert O. Ritchie

2001-01-01T23:59:59.000Z

168

Chemical thermodynamics of nuclear materials. IX. High temperature heat capacity of plutonium-3. 2 at. % gallium alloy  

Science Conference Proceedings (OSTI)

The heat capacity of delta-stabilized plutonium (Pu - 3.2 at. % Ga) has been determined from 330 to 700/sup 0/K by an adiabatic calorimeter. The heat capacity for this alloy may be expressed by: Cp (Pu-3.2 at. % Ga)/(J K/sup -1/ mol/sup -1/) = 39.249 - 0.0264 (T/K) + 3.595 x 10/sup 5/ (T/K)/sup 2/ - 2.506 x 10/sup 5/ (K/T)/sup 2/. It was found that a large contribution to the heat capacity is due to the electronic heat capacity. The thermal functions for this plutonium-gallium alloy are calculated to 700/sup 0/K.

Adams, R.O.; Oetting, F.L.

1982-01-01T23:59:59.000Z

169

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

SciTech Connect

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

2002-01-01T23:59:59.000Z

170

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

SciTech Connect

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

1999-01-01T23:59:59.000Z

171

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

SciTech Connect

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, G.S.; Luthra, K.L.

1999-09-14T23:59:59.000Z

172

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

DOE Green Energy (OSTI)

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

173

Single crystal silicon as a macro-world structural material : application to compact, lightweight high pressure vessels  

E-Print Network (OSTI)

Single crystal silicon has promising inherent structural properties which are attractive for weight sensitive applications. Single crystal silicon, however, is a brittle material which makes the usable strength that can ...

Garza, Tanya Cruz

2011-01-01T23:59:59.000Z

174

Annealing effects in hydrogenated silicon nitride films during high energy ion beam irradiation  

SciTech Connect

The annealing effects during energy recoil detection (ERD) analysis on the structure of hydrogenated silicon nitride film have been investigated by using fourier transform infrared (FTIR) spectroscopy. Hydrogenated silicon nitride films were prepared by plasma enhanced chemical vapor deposition with various substrate temperatures. A 2.5 MeV {sup 4}He{sup ++} ion beam was irradiated onto the film in a vacuum chamber at room temperature. The ERD signal was measured after various ion doses in order to determine the loss of hydrogen counts induced by the ion beam. The IR absorption spectrum was obtained in order to follow the film structural change which occurred due to the ion beam. The films deposited at 200 and 300 C show a significant decrease in the ERD count with increasing ion beam dose, while the film deposited at 400 C, shows no significant changes. The IR absorption peak position for Si-N stretching (830 cm{sup {minus}1}) shifted to smaller wave numbers after ion beam irradiation, while the Si-H stretching (2,160 cm{sup {minus}1}) shifted to the opposite direction. The peak position for N-H (3,360 cm{sup {minus}1}) shows no noticeable changes. Normalized peak area for the Si-N stretching increased after ion beam irradiation. The Si-H peak area decreased slightly. The N-H peak area decreased significantly. A recombination mechanism of the N and H radicals with excess Si radical coming from Si-Si bonds in Si-rich silicon nitride films has been suggested to explain the IR absorption spectral changes which have occurred due to ion beam irradiation.

Lee, J.W. [ETRI, Taejon (Korea, Republic of)]|[KAIST, Taejon (Korea, Republic of); Lee, S.H.; Yoo, H.J. [ETRI, Taejon (Korea, Republic of); Jhon, M.S.; Ryoo, R. [KAIST, Taejon (Korea, Republic of)

1995-09-01T23:59:59.000Z

175

High temperature adhesive silicone foam composition, foam generating system and method of generating foam  

DOE Patents (OSTI)

Access to a space is impeded by generation of a sticky foam from a silicone polymer and a low boiling solvent such as a halogenated hydrocarbon. In a preferred aspect, the formulation is polydimethylsiloxane gel mixed with F502 Freon as a solvent and blowing agent, and pressurized with CO.sub.2 in a vessel to about 250 PSI, whereby when the vessel is opened, a sticky and solvent resistant foam is deployed. The foam is deployable, over a wide range of temperatures, adhering to wet surfaces as well as dry, is stable over long periods of time and does not propagate flame or lose adhesive properties during an externally supported burn.

Mead, Judith W. (Peralta, NM); Montoya, Orelio J. (Albuquerque, NM); Rand, Peter B. (Albuquerque, NM); Willan, Vernon O. (Albuquerque, NM)

1984-01-01T23:59:59.000Z

176

Amorphous Hierarchical Porous GeOx as High-Capacity Anodes for LiIon Batteries with Very Long Cycling Life  

SciTech Connect

Many researchers have focused in recent years on resolving the crucial problem of capacity fading in Li ion batteries when carbon anodes are replaced by other group-IV elements (Si, Ge, Sn) with much higher capacities. Some progress was achieved by using different nanostructures (mainly carbon coatings), with which the cycle numbers reached 100-200. However, obtaining longer stability via a simple process remains challenging. Here we demonstrate that a nanostructure of amorphous hierarchical porous GeO{sub x} whose primary particles are {approx}3.7 nm diameter has a very stable capacity of {approx}1250 mA h g{sup -1} for 600 cycles. Furthermore, we show that a full cell coupled with a Li(NiCoMn){sub 1/3}O{sub 2} cathode exhibits high performance.

Wang, X.L.; Han, W.-Q.; Chen, H.; Bai, J.; Tyson, T.A.; Yu, X.-Q.; Wang, X.-J.; Yang, X.-Q.

2011-12-28T23:59:59.000Z

177

The Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposition for High Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications Preprint Alan Goodrich, Michael Woodhouse, and Peter Hacke Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin, Texas June 3-8, 2012 Conference Paper NREL/CP-6A20-55477 June 2012 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (Alliance), a contractor of the US Government under Contract No. DE-AC36-08GO28308. Accordingly, the US Government and Alliance retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government.

178

High-temperature heat-capacity measurements and critical property determinations using a Differential Scanning Calorimeter: Results of measurements on toluene, tetralin, and JP-10  

Science Conference Proceedings (OSTI)

Liquid-phase heat capacities (from near 300 K to near the critical temperature) and critical properties were determined for toluene, tetralin, and the specialty fuel JP-10 with a Differential Scanning Calorimeter (DSC) using high-temperature/high-pressure sample cells and procedural methods developed at NIPER. A complete description of the methods and calculational procedures is included as an appendix to the report. The results for toluene and tetralin compare very favorably with available literature values, while those for JP-10 are the first reported high-temperature heat capacity and critical property measurements for this material. This research was completed to demonstrate the type and scope of measurements needed for materials key to new process development, and in particular to the development of ''endothermic fuels'' for the development of new High-Speed Flight Vehicles. 20 refs., 5 figs., 21 tabs.

Steele, W.V.; Chirico, R.D.; Knipmeyer, S.E.; Smith, N.K.

1989-06-01T23:59:59.000Z

179

New Nanostructured Li2S/Silicon Rechargeable Battery with High Specific Energy  

E-Print Network (OSTI)

-Energy Battery Research and Opportunities.................... Lithium Intercalation Cathodes (hypothetical) 0.5-1.0 1.0-2.0 150-300 75-150 LiCoO2 cathode Li-ion battery module 0.5 1.0 300 150 NiMH battery of the battery mass. The cathode makes up the largest fraction due to its low specific ion capacity relative

Cui, Yi

180

High cycle fatigue of polycrystalline silicon thin films in laboratory air  

E-Print Network (OSTI)

When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, cyclic fatigue can only take place where there is some degree of toughening, implying that premature fatigue failure would not be expected in polycrystalline silicon where such toughening is absent. However, the fatigue failure of polysilicon is reported in the present work, based on tests on thirteen thin-film (2 µm thick) specimens cycled to failure in laboratory air (~25ºC, 30-50 % relative humidity), where damage accumulation and failure of the notched cantilever beams were monitored electrically during the test. Specimen lives ranged from about 10 seconds to 34 days (5 x 10 5 to 1 x 10 11 cycles) with the stress amplitude at failure being reduced to ~50 % of the low-cycle strength for lives in excess of 10 9 cycles.

C. L. Muhlstein; S. B. Brown; R. O. Ritchie

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Implementation of a Large Scale Control System for a High-Energy Physics Detector: The CMS Silicon Strip Tracker  

E-Print Network (OSTI)

Control systems for modern High-Energy Physics (HEP) detectors are large distributed software systems managing a significant data volume and implementing complex operational procedures. The control software for the LHC experiments at CERN is built on top of a commercial software used in industrial automation. However, HEP specific requirements call for extended functionalities. This thesis focuses on the design and implementation of the control system for the CMS Silicon Strip Tracker but presents some general strategies that have been applied in other contexts. Specific design solutions are developed to ensure acceptable response times and to provide the operator with an effective summary of the status of the devices. Detector safety is guaranteed by proper configuration of independent hardware systems. A software protection mechanism is used to avoid the widespread intervention of the hardware safety and to inhibit dangerous commands. A wizard approach allows non expert operators to recover error situations...

Masetti, Lorenzo; Fischer, Peter

2011-01-01T23:59:59.000Z

182

Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013  

DOE Green Energy (OSTI)

Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

Ravi, T. S.

2013-05-01T23:59:59.000Z

183

Process for forming retrograde profiles in silicon  

SciTech Connect

A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

1996-01-01T23:59:59.000Z

184

High-Efficiency Amorphous Silicon and Nanocrystalline Silicon-Based Solar Cells and Modules: Final Technical Progress Report, 30 January 2006 - 29 January 2008  

DOE Green Energy (OSTI)

United Solar Ovonic successfully used its spectrum-splitting a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure in their manufacturing plants, achieving a manufacturing capacity of 118 MW in 2007, and set up a very aggressive expansion plan to achieve grid parity.

Guha, S.; Yang, J.

2008-05-01T23:59:59.000Z

185

Atmospheric Crude Oil Distillation Operable Capacity  

Gasoline and Diesel Fuel Update (EIA)

(Barrels per Calendar Day) (Barrels per Calendar Day) Data Series: Total Number of Operable Refineries Number of Operating Refineries Number of Idle Refineries Atmospheric Crude Oil Distillation Operable Capacity (B/CD) Atmospheric Crude Oil Distillation Operating Capacity (B/CD) Atmospheric Crude Oil Distillation Idle Capacity (B/CD) Atmospheric Crude Oil Distillation Operable Capacity (B/SD) Atmospheric Crude Oil Distillation Operating Capacity (B/SD) Atmospheric Crude Oil Distillation Idle Capacity (B/SD) Vacuum Distillation Downstream Charge Capacity (B/SD) Thermal Cracking Downstream Charge Capacity (B/SD) Thermal Cracking Total Coking Downstream Charge Capacity (B/SD) Thermal Cracking Delayed Coking Downstream Charge Capacity (B/SD Thermal Cracking Fluid Coking Downstream Charge Capacity (B/SD) Thermal Cracking Visbreaking Downstream Charge Capacity (B/SD) Thermal Cracking Other/Gas Oil Charge Capacity (B/SD) Catalytic Cracking Fresh Feed Charge Capacity (B/SD) Catalytic Cracking Recycle Charge Capacity (B/SD) Catalytic Hydro-Cracking Charge Capacity (B/SD) Catalytic Hydro-Cracking Distillate Charge Capacity (B/SD) Catalytic Hydro-Cracking Gas Oil Charge Capacity (B/SD) Catalytic Hydro-Cracking Residual Charge Capacity (B/SD) Catalytic Reforming Charge Capacity (B/SD) Catalytic Reforming Low Pressure Charge Capacity (B/SD) Catalytic Reforming High Pressure Charge Capacity (B/SD) Catalytic Hydrotreating/Desulfurization Charge Capacity (B/SD) Catalytic Hydrotreating Naphtha/Reformer Feed Charge Cap (B/SD) Catalytic Hydrotreating Gasoline Charge Capacity (B/SD) Catalytic Hydrotreating Heavy Gas Oil Charge Capacity (B/SD) Catalytic Hydrotreating Distillate Charge Capacity (B/SD) Catalytic Hydrotreating Kerosene/Jet Fuel Charge Capacity (B/SD) Catalytic Hydrotreating Diesel Fuel Charge Capacity (B/SD) Catalytic Hydrotreating Other Distillate Charge Capacity (B/SD) Catalytic Hydrotreating Residual/Other Charge Capacity (B/SD) Catalytic Hydrotreating Residual Charge Capacity (B/SD) Catalytic Hydrotreating Other Oils Charge Capacity (B/SD) Fuels Solvent Deasphalting Charge Capacity (B/SD) Catalytic Reforming Downstream Charge Capacity (B/CD) Total Coking Downstream Charge Capacity (B/CD) Catalytic Cracking Fresh Feed Downstream Charge Capacity (B/CD) Catalytic Hydro-Cracking Downstream Charge Capacity (B/CD) Period:

186

Capacity Markets for Electricity  

E-Print Network (OSTI)

ternative Approaches for Power Capacity Markets”, Papers andand Steven Stoft, “Installed Capacity and Price Caps: Oil onElectricity Markets Have a Capacity requirement? If So, How

Creti, Anna; Fabra, Natalia

2004-01-01T23:59:59.000Z

187

2. Gas Productive Capacity  

U.S. Energy Information Administration (EIA)

2. Gas Productive Capacity Gas Capacity to Meet Lower 48 States Requirements The United States has sufficient dry gas productive capacity at the wellhead to meet ...

188

Fundamental Studies of Advanced High-Capacity, Reversible Metal Hydrides - DOE Hydrogen and Fuel Cells Program FY 2012 Annual Progress Report  

NLE Websites -- All DOE Office Websites (Extended Search)

DOE Hydrogen and Fuel Cells Program FY 2012 Annual Progress Report Craig M. Jensen (Primary Contact) and Marina Chong University of Hawaii Department of Chemistry Honolulu, HI 96822 Phone: (808) 956-2769 Email: jensen@hawaii.edu DOE Managers HQ: Ned Stetson Phone: (202) 586-9995 Email: Ned.Stetson@ee.doe.gov GO: Katie Randolph Phone: (720) 356-1759 Email: Katie.Randolph@go.doe.gov Contract Number: DE-FC36-05GO15063 Project Start Date: April 1, 2005 Project End Date: September 30, 2012 Fiscal Year (FY) 2012 Objectives The objective of this project is to develop a new class of reversible materials that have the potential to meet the DOE kinetic and system gravimetric storage capacity targets. During the past year, our investigations have focused on the study of novel, high hydrogen capacity, borohydrides that can

189

Fact Sheet: Award-Winning Silicon Carbide Power Electronics ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Award-Winning Silicon Carbide Power Electronics (October 2012) Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012) Operating at high temperatures and with...

190

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD  

DOE Green Energy (OSTI)

Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H{sub 2}, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are reduced; (3) surface hydrogen removal--heavier and more energetic helium ions break the Si-H much easier than hydrogen ions. The preferential attachment of Si-H to Ge-H is reduced. They also found that with the small amount of hydrogen put into the plasma, the superior properties of a-(Si,Ge):H made from pure hydrogen dilution plasma were still maintained. These hydrogen ions help to remove the subsurface weakly bonded hydrogen and buried hydrogen. They also help to passivate the Ge-dangling bond.

Yong Liu

2002-05-31T23:59:59.000Z

191

High silicon content silylating reagents for dry-developed positive-tone resists for extreme ultraviolet (13.5 nm) and deep ultraviolet (248 nm) microlithography  

SciTech Connect

Recent results in the use of disilanes as silylating reagents for near-surface imaging with deep-UV (248 nm) and EUV (13.5 nm) lithography are reported. A relatively thin imaging layer of a photo-cross-linking resist is spun over a thicker layer of hard-baked resist that functions as a planarizing layer and antireflective coating. Photoinduced acid generation and subsequent heating crosslinks and renders exposed areas impermeable to an aminodisilane that reacts with the unexposed regions. Subsequent silylation and reactive ion etching afford a positive-tone image. The use of disilanes introduces a higher concentration of silicon into the polymer than is possible with silicon reagents that incorporate only one silicon atom per reactive site. The higher silicon content in the silylated polymer increases etching selectivity between exposed and unexposed regions and thereby increases the contrast. Additional improvements that help to minimize flow during silylation are also discussed, including the addition of bifunctional disilanes. We have resolved high aspect ratio, very high quality 0.20 {mu}m line and space patterns at 248 nm with a stepper having a numerical aperture (NA)= 0.53, and have resolved {<=} 0.15 {mu}m line and spaces at 13.5 nm.

Wheeler, D.; Scharrer, E.; Kubiak, G. [and others

1994-12-31T23:59:59.000Z

192

Investigation of polarization anisotropy in individual porous silicon nanoparticles  

Science Conference Proceedings (OSTI)

Polarization anisotropy is investigated in single porous silicon nanoparticles containing multiple chromophores. Two forms of nanoparticle samples are studied; low current density (LCD) and high current density (HCD). Photoluminescence measurements reveal ... Keywords: Anisotropy, Photoluminescence, Polarization, Porous silicon, Silicon nanocrystal

Daniel J. Gargas; Donald J. Sirbuly; Michael D. Mason; Paul J. Carson; Steven K. Buratto

2008-09-01T23:59:59.000Z

193

Silicon/Pyrex Planar Microbattery A Silicon Process-Compatible Micro-Power Source  

DOE Green Energy (OSTI)

The design, fabrication, and performance of a planar microbattery made from a silicon wafer with a bonded lid are presented. The battery is designed with two compartments, separated by four columns of micro-posts. These posts are 3 or 5 micrometers in diameter. The posts permit transport of liquid electrolyte, but stop particles of battery material from each compartment from mixing. The anode and cathode battery compartments, the posts, fill holes, and conductive vias are all made using high-aspect-ratio reactive ion (Bosch) etching. After the silicon wafer is completed, it is anodically bonded or adhesive bonded to a Pyrex{reg_sign} wafer lid. The battery materials are made from micro-disperse particles that are 3-5 micrometers in diameter. The lithium-ion chemistry is microcarbon mesobeads and lithium cobalt oxide. The battery capacity is 1.83 micro-amp-hrs/cm{sup 2} at a discharge rate of 25 microamps.

KRAVITZ, STANLEY H.; INGERSOLL, DAVID; BELL, NELSON S.; ZMUDA, SHERRY A.; SHUL, RANDY J.; WROBLEWSKI, BRIAN

2003-02-01T23:59:59.000Z

194

Six Thousand Electrochemical Cycles of Double-Walled Silicon Nanotube Anodes for Lithium Ion Batteries  

DOE Green Energy (OSTI)

Despite remarkable progress, lithium ion batteries still need higher energy density and better cycle life for consumer electronics, electric drive vehicles and large-scale renewable energy storage applications. Silicon has recently been explored as a promising anode material for high energy batteries; however, attaining long cycle life remains a significant challenge due to materials pulverization during cycling and an unstable solid-electrolyte interphase. Here, we report double-walled silicon nanotube electrodes that can cycle over 6000 times while retaining more than 85% of the initial capacity. This excellent performance is due to the unique double-walled structure in which the outer silicon oxide wall confines the inner silicon wall to expand only inward during lithiation, resulting in a stable solid-electrolyte interphase. This structural concept is general and could be extended to other battery materials that undergo large volume changes.

Wu, H

2011-08-18T23:59:59.000Z

195

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

196

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics  

E-Print Network (OSTI)

In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

Chung, Jinwook W. (Jinwook Will)

2011-01-01T23:59:59.000Z

197

Development of high-efficiency solar cells on silicon web. First quarterly progress report, April 20-July 15, 1984  

DOE Green Energy (OSTI)

The major objective of the work reported is to improve web base material with a goal toward obtaining solar cell efficiencies in excess of 18% (AM1). The program consists of the investigation of carrier loss mechanisms in web silicon, development of techniques to reduce carrier recombination in web, and web cell fabrication using effective surface passivation. Web surfaces have been bevelled with the intention of measuring the electrical activity of the twin plane. Web crystals have been intentionally contaminated with vanadium and titanium to examine the twin-plane-assisted internal gettering by DLTS. Model calculations were done to see the effect of twin-plane activity on V/sub oc/ as a function of resistivity of the web material. Experiments were initiated to study the effect of heat treatment and gettering on the minority carrier diffusion length in webs. Fabrication of high-efficiency web cells using several web crystals was initiated. These cells will include surface passivation and double-layer antireflection coating. (LEW)

Rohatgi, A.; Meier, D.L.; Campbell, R.B.; Rai-Choudhury, P.

1984-08-09T23:59:59.000Z

198

Research on stable, high-efficiency amorphous silicon multijunction modules. Semiannual subcontract report, 1 January 1990--30 June 1991  

DOE Green Energy (OSTI)

This report describes research to improve the understanding of amorphous silicon alloys and other relevant non-semiconductor materials for use in high-efficiency, large-area multijunction modules. The research produced an average subcell initial efficiency of 8.8% over a 1-ft{sup 2} area using same-band-gap, dual-junction cells deposited over a ZnO/AlSi back reflector. An initial efficiency of 9.6% was achieved using a ZnO/Ag back reflector over smaller substrates. A sputtering machine will be built to deposit a ZnO/Ag back reflector over a 1-ft{sup 2} area so that a higher efficiency can also be obtained on larger substrates. Calculations have been performed to optimize the grid pattern, bus bars, and cell interconnects on modules. With our present state of technology, we expect a difference of about 6% between the aperture-area and active-area efficiencies of modules. Preliminary experiments show a difference of about 8%. We can now predict the performance of single-junction cells after long-term light exposure at 50{degree}C by exposing cells to short-term intense light at different temperatures. We find that single-junction cells deposited on a ZnO/Ag back reflector show the highest stabilized efficiency when the thickness of the intrinsic layers is about 2000 {angstrom}. 8 refs.

Guha, S. [United Solar Systems Corp., Troy, MI (United States)

1991-12-01T23:59:59.000Z

199

Research on stable, high-efficiency amorphous silicon multijunction modules. Annual subcontract report, 1 January 1991--31 December 1991  

DOE Green Energy (OSTI)

This report describes the progress made during Phase 1 of research and development program to obtain high-efficiency amorphous silicon alloy multijunction modules. Using a large-area deposition system, double-and triple-junction cells were made on stainless steel substrates of over 1 ft{sup 2} area with Ag and ZnO predeposited back reflector. Modules of over 1 ft{sup 2} were produced with between 9.2% and 9.9 initial aperture-area efficiencies as measured under a USSC Spire solar simulator. Efficiencies as measured under the NREL Spire solar simulator were found to be typically 15% to 18% lower. The causes for this discrepancy are now being investigated. The modules show about 15% degradation after 600 hours of one-sun illumination at 50{degrees}C. To optimize devices for higher stabilized efficiency, a new method was developed by which the performance of single-junction cells after long-term, one-sun exposure at 50{degrees}C can be predicted by exposing cells to short-term intense light at different temperatures. This method is being used to optimize the component cells of the multijunction structure to obtain the highest light-degraded efficiency.

Banerjee, A.; Chen, E.; Clough, R.; Glatfelter, T.; Guha, S.; Hammond, G.; Hopson, M.; Jackett, N.; Lycette, M.; Noch, J.; Palmer, T.; Pawlikiewicz, A.; Rosenstein, I.; Ross, R.; Wolf, D.; Xu, X.; Yang, J.; Younan, K.

1992-04-01T23:59:59.000Z

200

High-rate deposition of hydrogenated amorphous silicon films and devices  

SciTech Connect

In high-rate deposition of a-Si:H films, the effect of deposition parameters on material properties are examined when silane and disilane are the feed gases. The emphasis is on RF glow discharge, but other deposition methods are also covered. The problems of gas-phase polymerization and power formation at high rates have been overcome by modified reactor designs. Deposition rates of 1-3 nm/s are adequate for economically fabricating the intrinsic layer. Laboratory-size a-Si:H cells with greater than 10% efficiency have been achieved with both silane and disilane at rates in the 1- to 2-nm/s range.

Luft, W.

1988-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide  

Science Conference Proceedings (OSTI)

HfTa"xO"y high-k dielectric layers with different compositions were deposited using ALD on 1nm SiO"2 generated by ozone based cleaning of 200mm Si(100) surface. Physical characterization of blanket layers and C-V mapping demonstrates that the ALD layers ...

C. Zhao; T. Witters; P. Breimer; J. Maes; M. Caymax; S. De Gendt

2007-01-01T23:59:59.000Z

202

Analysis of defects at the interface between high-k thin films and (100) silicon  

Science Conference Proceedings (OSTI)

Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, P"b"0 and P"b"1 defects, previously observed in Si/SiO"2 structures. ... Keywords: Aluminium oxide, Defects, EPR, High-k, Interfaces, Thin films

B. J. Jones; R. C. Barklie

2005-06-01T23:59:59.000Z

203

Cermet layer for amorphous silicon solar cells  

DOE Patents (OSTI)

A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

Hanak, Joseph J. (Lawrenceville, NJ)

1979-01-01T23:59:59.000Z

204

FAQs about Storage Capacity  

Gasoline and Diesel Fuel Update (EIA)

about Storage Capacity about Storage Capacity How do I determine if my tanks are in operation or idle or non-reportable? Refer to the following flowchart. Should idle capacity be included with working capacity? No, only report working capacity of tanks and caverns in operation, but not for idle tanks and caverns. Should working capacity match net available shell in operation/total net available shell capacity? Working capacity should be less than net available shell capacity because working capacity excludes contingency space and tank bottoms. What is the difference between net available shell capacity in operation and total net available shell capacity? Net available shell capacity in operation excludes capacity of idle tanks and caverns. What do you mean by transshipment tanks?

205

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells  

DOE Green Energy (OSTI)

This document describes the progress made in obtaining stable, a-Si-based submodules that have a large area and high efficiency. Conversion efficiencies of up to 11.95% were obtained in small-area, single-junction a-Si solar cells using textured TiO{sub 2}, superlattice p-layers, graded carbon concentrations near the p/i interface, and highly reflective ITO/silver back contacts. Single- junction a-SiC and a-SiGe p-i-n cells were also fabricated that had conversion efficiencies of 9%--11%, and some recently fabricated stacked-junction cells had conversion efficiencies of about 10%. In materials research boron-doped microcrystalline SiC films were recently developed containing up to 6 at. % carbon with conductivities of 3 {times} 10{sup {minus}3}/{Omega}-cm at room temperature and activation energies of 0.11 eV. Microcrystalline film growth was shown to be strongly influenced by the nature of the substrate, with nucleation occurring more readily on a-Si substrates than on TiO{sub 2}. Stability studies show that light-induced degradation is usually enhanced by the presence of carbon grading near the p/i interface. In general, adding either germanium (from GeH{sub 4}) or carbon (from CH{sub 4}) to the i-layer of a p-i-n cell leads to enhanced light-induced degradation. 13 refs., 80 figs., 17 tabs.

Catalano, A.W.; Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; D'Aiello, R.V.; Dickson, C.R.; Fortmann, C.M.; Goldstein, B.; McVeigh, J.; Morris, J.; Newton, J.L.; Wiedeman, S. (Solarex Corp., Newtown, PA (USA). Thin Film Div.)

1989-10-01T23:59:59.000Z

206

Performance of cryogenically cooled, high-heat-load silicon crystal monochromators with porous media augmentation  

SciTech Connect

The performance of two Si crystal x-ray monochromators internally cooled with liquid nitrogen was tested on the F2-wiggler beamline at the Cornell High Energy Synchrotron Source (CHESS). Both crystals were (111)-oriented blocks of rectangular cross section having identical dimensions. Seven 6.4-mm-diameter coolant channels were drilled through the crystals along the beam direction. In one of the crystals, porous Cu mesh inserts were bonded into the channels to enhance the heat transfer. The channels of the second crystal were left as drilled. Symmetric, double-crystal rocking curves were recorded simultaneously for both the first and third order reflections at 8 and 24 keV. The power load on the cooled crystal was adjusted by varying the horizontal beam size using slits. The measured Si(333) rocking curve of the unenhanced crystal at 24 keV at low power was 1.9 arcsec FWHM. The theoretical width is 0.63 arcsec. The difference is due to residual fabrication and mounting strain. For a maximum incident power of 601 W and an average power density of about 10 W/MM{sup 2}, the rocking curve was 2.7 arcsec. The rocking curve for the enhanced crystal at low power was 2.4 arcsec. At a maximum incident power of 1803 W and an average power density of about 19 W/mm{sup 2} the rocking curve width was 2.2 arcsec FWHM. The use of porous mesh augmentation is a simple, but very effective, means to improve the performance of cryogenically cooled Si monochromators exposed to high power x-ray beams.

Rogers, C.S.; Mills, D.M.; Assoufid, L.; Graber, T.

1996-01-01T23:59:59.000Z

207

Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength  

DOE Patents (OSTI)

A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

1991-09-17T23:59:59.000Z

208

Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength  

DOE Patents (OSTI)

A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength. The powder mixture includes 9a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon mitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12m.sup.2 g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified articel an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder.

Huckabee, Marvin L. (Marlboro, MA); Buljan, Sergej-Tomislav (Acton, MA); Neil, Jeffrey T. (Acton, MA)

1991-01-01T23:59:59.000Z

209

Silicon Cells | Open Energy Information  

Open Energy Info (EERE)

Cells Cells Jump to: navigation, search Name Silicon Cells Place United Kingdom Product Technology developer based upon a low cost method of processing silicon to produce a new generation of high energy density batteries. References Silicon Cells[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Silicon Cells is a company located in United Kingdom . References ↑ "Silicon Cells" Retrieved from "http://en.openei.org/w/index.php?title=Silicon_Cells&oldid=351081" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties About us Disclaimers Energy blogs

210

High-Capacity Micrometer-Sized Li2S Particles as Cathode Materials for Advanced Rechargeable Lithium-Ion Batteries  

E-Print Network (OSTI)

Lithium-Ion Batteries Yuan Yang, Guangyuan Zheng, Sumohan Misra,§ Johanna Nelson,§ Michael F. Toney as the cathode material for rechargeable lithium-ion batteries with high specific energy. INTRODUCTION Rechargeable lithium-ion batteries have been widely used in portable electronics and are promising

Cui, Yi

211

High efficiency low cost thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

1999-01-01T23:59:59.000Z

212

High efficiency, low cost, thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

2001-01-01T23:59:59.000Z

213

High efficiency low cost thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

Sopori, B.L.

1999-04-27T23:59:59.000Z

214

Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates  

DOE Patents (OSTI)

A method of fabricating device quality, thin-film a-Si:H for use as semiconductor material in photovoltaic and other devices, comprising in any order; positioning a substrate in a vacuum chamber adjacent a plurality of heatable filaments with a spacing distance L between the substrate and the filaments; heating the filaments to a temperature that is high enough to obtain complete decomposition of silicohydride molecules that impinge said filaments into Si and H atomic species; providing a flow of silicohydride gas, or a mixture of silicohydride gas containing Si and H, in said vacuum chamber while maintaining a pressure P of said gas in said chamber, which, in combination with said spacing distance L, provides a P.times.L product in a range of 10-300 mT-cm to ensure that most of the Si atomic species react with silicohydride molecules in the gas before reaching the substrate, to thereby grow a a-Si:H film at a rate of at least 50 .ANG./sec.; and maintaining the substrate at a temperature that balances out-diffusion of H from the growing a-Si:H film with time needed for radical species containing Si and H to migrate to preferred bonding sites.

Mahan, Archie Harvin (Golden, CO); Molenbroek, Edith C. (Rotterdam, NL); Gallagher, Alan C. (Louisville, CO); Nelson, Brent P. (Golden, CO); Iwaniczko, Eugene (Lafayette, CO); Xu, Yueqin (Golden, CO)

2002-01-01T23:59:59.000Z

215

SF{sub 6}/O{sub 2} plasma effects on silicon nitride passivation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various SF{sub 6}/O{sub 2} plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M. [Materials Science and Engineering Department, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2006-11-27T23:59:59.000Z

216

Comparison of Productive Capacity  

U.S. Energy Information Administration (EIA)

Appendix B Comparison of Productive Capacity Comparisons of base case productive capacities for this and all previous studies were made (Figure B1).

217

Tables - Refinery Capacity Report  

U.S. Energy Information Administration (EIA)

Tables: 1: Number and Capacity of Operable Petroleum Refineries by PAD District and State as of January 1, 2009: PDF: 2: Production Capacity of Operable ...

218

System and method for liquid silicon containment  

SciTech Connect

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28T23:59:59.000Z

219

Manganese and Ceria Sorbents for High Temperature Sulfur Removal from Biomass-Derived Syngas -- The Impact of Steam on Capacity and Sorption Mode  

Science Conference Proceedings (OSTI)

Syngas derived from biomass and coal gasification for fuel synthesis or electricity generation contains sulfur species that are detrimental to downstream catalysts or turbine operation. Sulfur removal in high temperature, high steam conditions has been known to be challenging, but experimental reports on methods to tackle the problem are not often reported. We have developed sorbents that can remove hydrogen sulfide from syngas at high temperature (700 C), both in dry and high steam conditions. The syngas composition chosen for our experiments is derived from statistical analysis of the gasification products of wood under a large variety of conditions. The two sorbents, Cu-ceria and manganese-based, were tested in a variety of conditions. In syngas containing steam, the capacity of the sorbents is much lower, and the impact of the sorbent in lowering H{sub 2}S levels is only evident in low space velocities. Spectroscopic characterization and thermodynamic consideration of the experimental results suggest that in syngas containing 45% steam, the removal of H{sub 2}S is primarily via surface chemisorptions. For the Cu-ceria sorbent, analysis of the amount of H{sub 2}S retained by the sorbent in dry syngas suggests both copper and ceria play a role in H{sub 2}S removal. For the manganese-based sorbent, in dry conditions, there is a solid state transformation of the sorbent, primarily into the sulfide form.

Cheah, S.; Parent, Y. O.; Jablonski, W. S.; Vinzant, T.; Olstad, J. L.

2012-07-01T23:59:59.000Z

220

First-principles Approaches to Simulate Lithiation in Silicon Electrodes  

E-Print Network (OSTI)

Silicon is viewed as an excellent electrode material for lithium batteries due to its high lithium storage capacity. Various Si nano-structures, such as Si nanowires, have performed well as lithium battery anodes and have opened up exciting opportunities for the use of Si in energy storage devices. The mechanism of lithium insertion and the interaction between Li and the Si electrode must be understood at the atomic level; this understanding can be achieved by first-principles simulation. Here, first-principles computations of lithiation in silicon electrodes are reviewed. The review focuses on three aspects: the various properties of bulk Li-Si compounds with different Li concentrations, the electronic structure of Si nanowires and Li insertion behavior in Si nanowires, and the dynamic lithiation process at the Li/Si interface. Potential study directions in this research field and difficulties that the field still faces are discussed at the end.

Zhang, Qianfan; Wang, Enge

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Deposited Silicon Photonics: Optical Interconnect Devices In Polycrystalline Silicon .  

E-Print Network (OSTI)

??Silicon photonics has tremendous potential to provide high-bandwidth and low-power data communication for applications such as computing and telecommunication, over length scales ranging from 100… (more)

Preston, Kyle

2011-01-01T23:59:59.000Z

222

Y-12 builds capacity to meet nuclear testing schedule - Or: ...  

NLE Websites -- All DOE Office Websites (Extended Search)

builds capacity to meet nuclear testing schedule - Or: Increasing capacity to meet nuclear testing schedule (title as it appeared in The Oak Ridger) The continuing high volume...

223

Diamond-silicon carbide composite and method  

DOE Patents (OSTI)

Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

Zhao, Yusheng (Los Alamos, NM)

2011-06-14T23:59:59.000Z

224

Network Routing Capacity  

E-Print Network (OSTI)

We define the routing capacity of a network to be the supremum of all possible fractional message throughputs achievable by routing. We prove that the routing capacity of every network is achievable and rational, we present an algorithm for its computation, and we prove that every non-negative rational number is the routing capacity of some network. We also determine the routing capacity for various example networks. Finally, we discuss the extension of routing capacity to fractional coding solutions and show that the coding capacity of a network is independent of the alphabet used.

Jillian Cannons; Randall Dougherty; Christopher Freiling; Kenneth Zeger

2005-01-01T23:59:59.000Z

225

Structural alloy with a protective coating containing silicon or silicon-oxide  

DOE Patents (OSTI)

This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

Natesan, K.

1992-01-01T23:59:59.000Z

226

Nanoscale Characterization of Polymer Precursor Derived Silicon ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Nano-scale mechanical properties of silicon carbide derived ... Carbon Fiber Reinforced Ultra-High-Temperature Ceramic Matrix Composites.

227

Available Technologies: Thinner Film Silicon Solar Cells  

Berkeley Lab scientists have designed a new approach to create highly efficient thin film silicon solar cells. This technology promises to lower solar cell material ...

228

High temperature adhesive silicone foam composition, foam generating system and method of generating foam. [For access denial  

DOE Patents (OSTI)

Access to a space is impeded by generation of a sticky foam from a silicone polymer and a low boiling solvent such as a halogenated hydrocarbon. In a preferred aspect, the formulation is polydimethylsiloxane gel mixed with F502 Freon as a solvent and blowing agent, and pressurized with CO/sub 2/ in a vessel to about 250 PSI, whereby when the vessel is opened, a sticky and solvent resistant foam is deployed. The foam is deployable, over a wide range of temperatures, adhering to wet surfaces as well as dry, is stable over long periods of time and does not propagate flame or lose adhesive properties during an externally supported burn.

Mead, J.W.; Montoya, O.J.; Rand, P.B.; Willan, V.O.

1983-12-21T23:59:59.000Z

229

Process for forming silicon carbide films and microcomponents  

DOE Patents (OSTI)

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19T23:59:59.000Z

230

Process for forming silicon carbide films and microcomponents  

DOE Patents (OSTI)

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

1999-01-01T23:59:59.000Z

231

Distribution of boron, calcium and aluminium between silicon and ...  

Science Conference Proceedings (OSTI)

Presentation Title, Distribution of boron, calcium and aluminium between ... Electrochemical deposition of high purity silicon from molten fluoride electrolytes.

232

Distribution of Calcium and Aluminum between Molten Silicon and ...  

Science Conference Proceedings (OSTI)

Presentation Title, Distribution of Calcium and Aluminum between Molten ... Electrochemical deposition of high purity silicon from molten fluoride electrolytes.

233

Amorphous silicon solar cell allowing infrared transmission  

DOE Patents (OSTI)

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Carlson, David E. (Yardley, PA)

1979-01-01T23:59:59.000Z

234

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents (OSTI)

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

235

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents (OSTI)

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

Kaschmitter, James L. (Pleasanton, CA)

1996-01-01T23:59:59.000Z

236

Amorphous silicon radiation detectors  

DOE Patents (OSTI)

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

1992-01-01T23:59:59.000Z

237

Amorphous silicon radiation detectors  

DOE Patents (OSTI)

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

1992-11-17T23:59:59.000Z

238

ORISE: Capacity Building  

NLE Websites -- All DOE Office Websites (Extended Search)

Capacity Building Capacity Building Because public health agencies must maintain the resources to respond to public health challenges, critical situations and emergencies, the Oak Ridge Institute for Science and Education (ORISE) helps government agencies and organizations develop a solid infrastructure through capacity building. Capacity building refers to activities that improve an organization's ability to achieve its mission or a person's ability do his or her job more effectively. For organizations, capacity building may relate to almost any aspect of its work-from leadership and administration to program development and implementation. Strengthening an organizational infrastructure can help agencies and community-based organizations more quickly identify targeted audiences for

239

High Capacity High Speed Optical Data Storage System Based on Diffraction-Free Nanobeam. Final Report, 09-02-98 to 03-17-99  

SciTech Connect

Physical Optics Corporation (POC) investigated the development of an optical data storage system built around a current well-engineered high-speed optical disk system with an innovative diffraction-free micro-optical element to produce a beam {approximately}250 nm wide with {approximately}4-5 mm depth of focus, allowing the system to address data at {approximately}100 Mbits/second and to store it 100 to 1,000 times more densely ({approximately}10 Gbit/in.{sup 2}) than in present systems. In Phase 1 of this project POC completed a thorough feasibility study by system design and analysis, successfully demonstrated fabrication of the key components, and conducted a proof-of-principle experimental demonstration. Specifically, production of a subwavelength ({approximately}380 nm) large depth of focus ({approximately}4-5 mm) addressing beam was demonstrated by fabricating a special microdiffractive optical element and recording this beam on a standard optical recording disk coated with a photopolymer material.

Tin Aye

1999-06-16T23:59:59.000Z

240

Modeling Capacity Reservation Contract  

E-Print Network (OSTI)

In this paper we model a scenario where a chip designer (buyer) buys capacity from chip manufacturers (suppliers) in the presence of demand uncertainty faced by the buyer. We assume that the buyer knows the probability distribution of his demand. The supplier offers the buyer to reserve capacity in advance at a price that is lower than the historical average of the spot price. The supplier’s price (if the buyer reserves capacity in advance) is function of her capacity, demand for her capacity, unit production cost, the average spot market price and the amount of capacity reserved by the buyer. Based on these parameters we derive the price the suppliers will charge. We formulate the problem from the buyer’s perspective. The buyer’s decisions are how much capacity to reserve and from how many suppliers. The optimal solution is obtained numerically. Our model addresses the following issues that are not covered in the current literature on capacity reservation models. In the existing literature the supplier’s price is an exogenous parameter. We model the supplier’s price from relevant parameters mentioned above. This makes our model richer. For example, if the expected capacity utilization for the supplier is likely to be low then the supplier will charge a lower price for capacity reservation. In reality, the buyer sources from multiple suppliers. Most mathematical models on capacity reservation, we are aware of, assumes a single buyer and a single supplier. We generalize this to a single buyer and multiple suppliers.

Jishnu Hazra; B. Mahadevan; Sudhi Seshadri

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

High sensitivity boron quantification in bulk silicon using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction  

Science Conference Proceedings (OSTI)

There is a great need to quantify sub-ppm levels of boron in bulk silicon. There are several methods to analyze B in Si: Nuclear Reaction Analysis using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be reaction exhibits a quantification limit of some hundreds ppm of B in Si. Heavy Ion Elastic Recoil Detection Analysis offers a detection limit of 5 to 10 at. ppm. Secondary Ion Mass Spectrometry is the method of choice of the semiconductor industry for the analysis of B in Si. This work verifies the use of NRA to quantify B in Si, and the corresponding detection limits. Proton beam with 1.6 up to 2.6 MeV was used to obtain the cross-section of the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction at 170 Degree-Sign scattering angle. The results show good agreementwith literature indicating that the quantification of boron in silicon can be achieved at 100 ppm level (high sensitivity) at LAMFI-IFUSP with about 16% uncertainty. Increasing the detection solid angle and the collected beam charge, can reduce the detection limit to less than 100 ppm meeting present technological needs.

Moro, Marcos V.; Silva, Tiago F. da; Added, Nemitala; Rizutto, Marcia A.; Tabacniks, Manfredo H. [Instituto de Fisica da Universidade de Sao Paulo, C.P. 66318, 05315-970 Sao Paulo, SP (Brazil); Neira, John B.; Neto, Joao B. F. [Institute of Research Tecnology, Cidade Universitaria, SP, 05508-091 (Brazil)

2013-05-06T23:59:59.000Z

242

Silicon Microrefrigerator  

E-Print Network (OSTI)

We fabricated a silicon microrefrigerator on a 500-mu m-thick substrate with the standard integrated circuit (IC) fabrication process. The cooler achieves a maximum cooling of 1 degrees C below ambient at room temperature. Simulations show that the cooling power density for a 40 x 40 mu m(2) device exceeds 500 W/cm(2). The unique three-dimensional (3-D) geometry, current and heat spreading, different from conventional one-dimensional (1-D) thermoelectric device, contribute to this large cooling power density. A 3-D finite element electrothermal model is used to analyze non-ideal factors inside the device and predict its limits. The simulation results show that in the ideal situation, with low contact resistance, bulk silicon with 3-D geometry could cool similar to 20 degrees C with a cooling power density of 1000 W/cm(2) despite the low thermoelectric figure-of-merit (ZT) of the material. The large cooling power density is due to the geometry dependent heat and current spreading in the device. The non-uniformity of current and Joule heating inside the substrate also contributes to the maximum cooling of silicon microrefrigerator, exceeding 30 % limit given in one-dimensional thermoelectric theory Delta T-max = 0.5ZT(c)(2) where T-c is the cold side temperature. These devices can be used c to remove hot spots

Y Zhang; G H. Zeng; A Shakouri; Yan Zhang; Gehong Zeng; Ali Shakouri

2006-01-01T23:59:59.000Z

243

Research on stable, high-efficiency amorphous silicon multijunction modules. Semiannual subcontract report, 1 January 1992--30 June 1992  

DOE Green Energy (OSTI)

This report describes research on semiconductor and non-semiconductor materials to enhance the performance of multi-band-gap, multijunction panel with an area greater than 900 cm{sup 2} by 1992. Double-junction and triple-junction cells are mode on a Ag/ZnO back reflector deposited on stainless steel substrates. An a-SiGe alloy is used for the i-layer in the bottom and the middle cells; the top cell uses an amorphous silicon alloy. After the evaporation of an antireflection coating, silver grids and bus bars are put on the top surface and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a 1-ft{sup 2} monolithic module.

Guha, S. [United Solar Systems Corp., Troy, MI (United States)

1992-09-01T23:59:59.000Z

244

Research on stable, high-efficiency amorphous silicon multijunction modules. Final subcontract report, 1 January 1991--31 August 1994  

DOE Green Energy (OSTI)

The principal objective of this program is to conduct research on semiconductor materials and non-semiconductor materials to enhance the performance of multibandgap, multijunction, large-area amorphous silicon-based alloy modules. The goal for this program is to demonstrate stabilized module efficiency of 12% for multijunction modules of area greater than 900 cm{sup 2}. Double-junction and triple-junction cells are made on Ag/ZnO back reflector deposited on stainless steel substrates. The top cell uses a-Si alloy; a-SiGe alloy is used for the i layer in the middle and the bottom cells. After evaporation of antireflection coating, silver grids and bus bars are put on the top surface, and the panel is encapsulated in an ethylene vinyl acetate (EVA)/Tefzel structure to make a one-square-foot monolithic module.

Guha, S. [United Solar Systems Corp., Troy, MI (United States)

1994-10-01T23:59:59.000Z

245

Current Status and Issues of Silicon Carbide Composites for Nuclear ...  

Science Conference Proceedings (OSTI)

High-purity silicon carbide composites consisting of the high purity and highly crystalline fibers and matrices have proven the excellent mechanical performance ...

246

Natural Gas Underground Storage Capacity (Summary)  

Gasoline and Diesel Fuel Update (EIA)

Salt Caverns Storage Capacity Aquifers Storage Capacity Depleted Fields Storage Capacity Total Working Gas Capacity Working Gas Capacity of Salt Caverns Working Gas Capacity of...

247

Increasing State Capacity Through Clans  

E-Print Network (OSTI)

their role in increasing state capacity With the decline ofhere focus on state capacity and the associated discussionselements of state capacity during the transition from one

Doyle, Jr, Thomas Martin

2009-01-01T23:59:59.000Z

248

Capacity Markets for Electricity  

E-Print Network (OSTI)

Designing Markets for Electricity. Wiley IEEE Press. [25]in the England and Wales Electricity Market”, Power WorkingFelder (1996), “Should Electricity Markets Have a Capacity

Creti, Anna; Fabra, Natalia

2004-01-01T23:59:59.000Z

249

ORISE: Capacity Building  

NLE Websites -- All DOE Office Websites (Extended Search)

Capacity Building Because public health agencies must maintain the resources to respond to public health challenges, critical situations and emergencies, the Oak Ridge Institute...

250

Method for fabricating silicon cells  

DOE Patents (OSTI)

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11T23:59:59.000Z

251

Method for fabricating silicon cells  

DOE Patents (OSTI)

A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

1998-08-11T23:59:59.000Z

252

Inverted amorphous silicon solar cell utilizing cermet layers  

DOE Patents (OSTI)

An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

Hanak, Joseph J. (Lawrenceville, NJ)

1979-01-01T23:59:59.000Z

253

Iron-oxide catalyzed silicon photoanode for water splitting  

E-Print Network (OSTI)

This thesis presents an integrated study of high efficiency photoanodes for water splitting using silicon and iron-oxide. The fundamental limitations of silicon to water splitting applications were overcome by an ultrathin ...

Jun, Kimin

2011-01-01T23:59:59.000Z

254

Capacity on Finsler Spaces  

E-Print Network (OSTI)

Here, the concept of electric capacity on Finsler spaces is introduced and the fundamental conformal invariant property is proved, i.e. the capacity of a compact set on a connected non-compact Finsler manifold is conformal invariant. This work enables mathematicians and theoretical physicists to become more familiar with the global Finsler geometry and one of its new applications.

Bidabad, B

2009-01-01T23:59:59.000Z

255

Liquid heat capacity lasers  

DOE Patents (OSTI)

The heat capacity laser concept is extended to systems in which the heat capacity lasing media is a liquid. The laser active liquid is circulated from a reservoir (where the bulk of the media and hence waste heat resides) through a channel so configured for both optical pumping of the media for gain and for light amplification from the resulting gain.

Comaskey, Brian J. (Walnut Creek, CA); Scheibner, Karl F. (Tracy, CA); Ault, Earl R. (Livermore, CA)

2007-05-01T23:59:59.000Z

256

Effect of Al/Si Substitutions and Silanol Nests on the Local Geometry of Si and Al Framework Sites in Silicone-Rich Zeolites: A Combined High Resolution 27  

E-Print Network (OSTI)

Effect of Al/Si Substitutions and Silanol Nests on the Local Geometry of Si and Al Framework Sites in Silicone-Rich Zeolites: A Combined High Resolution 27 Al and 29 Si NMR and Density Functional TheoryVed: May 6, 2009; ReVised Manuscript ReceiVed: June 8, 2009 We employed 29 Si and 27 Al (3Q) magic

Sklenak, Stepan

257

capacity | OpenEI  

Open Energy Info (EERE)

capacity capacity Dataset Summary Description This dataset comes from the Energy Information Administration (EIA), and is part of the 2011 Annual Energy Outlook Report (AEO2011). This dataset is table 9, and contains only the reference case. The dataset uses gigawatts. The data is broken down into power only, combined heat and power, cumulative planned additions, cumulative unplanned conditions, and cumulative retirements and total electric power sector capacity . Source EIA Date Released April 26th, 2011 (3 years ago) Date Updated Unknown Keywords 2011 AEO capacity consumption EIA Electricity generating Data application/vnd.ms-excel icon AEO2011: Electricity Generating Capacity- Reference Case (xls, 130.1 KiB) Quality Metrics Level of Review Peer Reviewed Comment

258

Battery capacity indicator  

SciTech Connect

This patent describes a battery capacity indicator for providing a continuous indication of battery capacity for a battery powered device. It comprises means for periodically effecting a first and a second positive discharge rate of the battery; voltage measurement means, for measuring the battery terminal voltage at the first and second positive discharge rates during the operation of the device, and for generating a differential battery voltage value in response thereto; memory means for storing a set of predetermined differential battery voltage values and a set of predetermined battery capacity values, each of the set of predetermined differential battery voltage values defining one of the set of predetermined battery capacity values; comparison means, coupled to the memory means and to the voltage measurement means, for comparing the measured differential battery voltage values with the set of predetermined differential battery voltage values, and for selecting the predetermined battery capacity value corresponding thereto.

Kunznicki, W.J.

1991-07-16T23:59:59.000Z

259

Purification and deposition of silicon by an iodide disproportionation reaction  

DOE Patents (OSTI)

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Wang, Tihu (Littleton, CO); Ciszek, Theodore F. (Evergreen, CO)

2002-01-01T23:59:59.000Z

260

Low Silicon Solar Array Project. Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon. Quarterly progress report, October-December 1978  

DOE Green Energy (OSTI)

Research on silane production in a hydrogenation reactor is described. The kinetics and chemical equilibrium for the liquid phase disproportionation of H/sub 2/SiCl/sub 4/ and HSiCl/sub 3/ were studied and results are presented and discussed. Status of the studies on the feasibility and cost of manufacturing semiconductor grade polycrystalline silicon by the pyrolysis of silane in a fluid bed reactor and in a free space reactor is reported. Process design, the waste disposal system, and equipment specifications for the fluid bed pyrolysis of silane for silicon production are described. (WHK)

Breneman, W.C.; Farrier, E.G.; Morihara, H.

1978-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Surface alloying of silicon into aluminum substrate.  

SciTech Connect

Aluminum alloys that are easily castable tend to have lower silicon content and hence lower wear resistance. The use of laser surface alloying to improve the surface wear resistance of 319 and 320 aluminum alloys was examined. A silicon layer was painted onto the surface to be treated. A high power pulsed Nd:YAG laser with fiberoptic beam delivery was used to carry out the laser surface treatment to enhance the silicon content. Process parameters were varied to minimize the surface roughness from overlap of the laser beam treatment. The surface-alloyed layer was characterized and the silicon content was determined.

Xu, Z.

1998-10-28T23:59:59.000Z

262

Task B: Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules: Semiannual subcontract report, 1 February 1987--31 July 1987  

DOE Green Energy (OSTI)

This semiannual report presents results of research on stable, high-efficiency, large-area, amorphous-silicon-based submodules. High conversion efficiencies (up to 11.95%) were obtained in small-area, single-junction, a-Si solar cells by using textured tin oxide, superlattice p-layers, graded carbon concentrations near the p-i interface, and highly relective ITO/silver back contacts. Researchers also fabricated single-junction a-SiC and a-SiGe p-i-n cells with efficiencies of 9%--11%. Stacked-junction cells of a-SiC/a-Si, a-SiC/a-SiGe, and a-SiC/a-Si/a-SiGe were fabricated, and efficiencies of about 10% were achieved in some of them. Boron-doped microcrystalline SiC films were developed that contain up to 6 at.% C with conductivities of 3 /times/ 10/sup /minus/3/ ohm /sup /minus/1/ cm/sup /minus/1/ at room temperature and activation energies of 0.11 eV. Stability studies showed that light-induced degradation is usually enhanced by the presence of C grading near the p-i interface. Light-induced degradation of the fill factor of p-i-n cells strongly correlates with optical absorption at 1.2 eV, as measured by photothermal deflection spectroscopy. 11 refs., 70 figs., 16 tabs.

Carlson, D.E.; Arya, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; Fortmann, C.M.; Goldstein, B.; Morris, J.; Newton, J.L.

1988-07-01T23:59:59.000Z

263

The quantum capacity with symmetric side channels  

E-Print Network (OSTI)

We present an upper bound for the quantum channel capacity that is both additive and convex. Our bound can be interpreted as the capacity of a channel for high-fidelity quantum communication when assisted by a family of channels that have no capacity on their own. This family of assistance channels, which we call symmetric side channels, consists of all channels mapping symmetrically to their output and environment. The bound seems to be quite tight, and for degradable quantum channels it coincides with the unassisted channel capacity. Using this symmetric side channel capacity, we find new upper bounds on the capacity of the depolarizing channel. We also briefly indicate an analogous notion for distilling entanglement using the same class of (one-way) channels, yielding one of the few entanglement measures that is monotonic under local operations with one-way classical communication (1-LOCC), but not under the more general class of local operations with classical communication (LOCC).

Graeme Smith; John A. Smolin; Andreas Winter

2006-07-05T23:59:59.000Z

264

Modified silicon carbide whiskers  

DOE Patents (OSTI)

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, T.N.; Lindemer, T.B.

1991-05-21T23:59:59.000Z

265

Modified silicon carbide whiskers  

DOE Patents (OSTI)

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

1991-01-01T23:59:59.000Z

266

Lateral Capacity Exchange and Its Impact on Capacity Investment Decisions  

E-Print Network (OSTI)

We study the problem of capacity exchange between two …rms in anticipation of the mismatch between demand and capacity and its impact on …rm’s capacity investment decisions. For given capacity investment levels of the two …rms, we demonstrate how capacity price may be determined and how much capacity should be exchanged when either manufacturer acts as a Stackelberg leader in the capacity exchange game. By benchmarking against the centralized system, we show that a side payment may be used to coordinate the capacity exchange decisions. We then study the …rms’capacity investment decisions using a biform game framework in which capacity investment decisions are made individually and exchange decisions are made as in a centralized system. We demonstrate the existence and uniqueness of the Nash equilibrium capacity investment levels and study the impact of …rms’share of the capacity exchange surplus on their capacity investment levels.

Amiya K. Chakravartyz; Jun Zhangy

2005-01-01T23:59:59.000Z

267

Capacity Markets for Electricity  

E-Print Network (OSTI)

Global Agenda, August 15. [6] FERC, Docket No. EL01-63-003,at http://www.pjm.com. [7] FERC, Docket No. ER01-1440-capacity of the others” (FERC, 2001). Therefore, if an LSE

Creti, Anna; Fabra, Natalia

2004-01-01T23:59:59.000Z

268

Refinery Capacity Report 2007  

Reports and Publications (EIA)

Data series include fuel, electricity, and steam purchased for consumption at the refinery; refinery receipts of crude oil by method of transportation; current and projected capacities for atmospheric crude oil distillation, downstream charge, production, and storage capacities. Respondents are operators of all operating and idle petroleum refineries (including new refineries under construction) and refineries shut down during the previous year, located in the 50 States, the District of Columbia, Puerto Rico, the Virgin Islands, Guam, and other U.S. possessions.

Information Center

2007-06-29T23:59:59.000Z

269

Refinery Capacity Report 2009  

Reports and Publications (EIA)

Data series include fuel, electricity, and steam purchased for consumption at the refinery; refinery receipts of crude oil by method of transportation; current and projected capacities for atmospheric crude oil distillation, downstream charge, production, and storage capacities. Respondents are operators of all operating and idle petroleum refineries (including new refineries under construction) and refineries shut down during the previous year, located in the 50 States, the District of Columbia, Puerto Rico, the Virgin Islands, Guam, and other U.S. possessions.

Information Center

2009-06-25T23:59:59.000Z

270

Refinery Capacity Report 2008  

Reports and Publications (EIA)

Data series include fuel, electricity, and steam purchased for consumption at the refinery; refinery receipts of crude oil by method of transportation; current and projected capacities for atmospheric crude oil distillation, downstream charge, production, and storage capacities. Respondents are operators of all operating and idle petroleum refineries (including new refineries under construction) and refineries shut down during the previous year, located in the 50 States, the District of Columbia, Puerto Rico, the Virgin Islands, Guam, and other U.S. possessions.

Information Center

2008-06-20T23:59:59.000Z

271

Forward capacity market CONEfusion  

Science Conference Proceedings (OSTI)

In ISO New England and PJM it was assumed that sponsors of new capacity projects would offer them into the newly established forward centralized capacity markets at prices based on their levelized net cost of new entry, or ''Net CONE.'' But the FCCMs have not operated in the way their proponents had expected. To clear up the CONEfusion, FCCM designs should be reconsidered to adapt them to the changing circumstances and to be grounded in realistic expectations of market conduct. (author)

Wilson, James F.

2010-11-15T23:59:59.000Z

272

Hybrid silicon nanocrystal silicon nitride dynamic random access memory  

Science Conference Proceedings (OSTI)

This paper introduces a silicon nanocrystal-silicon nitride hybrid single transistor cell for potential dynamic RAM (DRAM) applications that stores charge in silicon nanocrystals or a silicon nitride charge trapping layer or both. The memory operates ...

R. F. Steimle; M. Sadd; R. Muralidhar; Rajesh Rao; B. Hradsky; S. Straub; B. E. White, Jr.

2003-12-01T23:59:59.000Z

273

Research on stable, high-efficiency, amorphous silicon multijunction modules. Annual subcontract report, 1 May 1991--30 April 1992  

DOE Green Energy (OSTI)

This report describes work to demonstrate a multijunction module with a ``stabilized`` efficiency (600 h, 50{degrees}C, AM1.5) of 10.5%. Triple-junction devices and modules using a-Si:H alloys with carbon and germanium were developed to meet program goals. ZnO was used to provide a high optical transmission front contact. Proof of concept was obtained for several important advances deemed to be important for obtaining high (12.5%) stabilized efficiency. They were (1) stable, high-quality a-SiC:H devices and (2) high-transmission, textured ZnO. Although these developments were not scaled up and included in modules, triple-junction module efficiencies as high as 10.85% were demonstrated. NREL measured 9.62% and 9.00% indoors and outdoors, respectively. The modules are expected to lose no more than 20% of their initial performance. 28 refs.

Catalano, A.; Bennett, M.; Chen, L.; D`Aiello, R.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Yang, L. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

1992-08-01T23:59:59.000Z

274

First-Principles Study of Novel Conversion Reactions for High-Capacity Li-Ion Battery Anodes in the Li-Mg-B-N-H System  

DOE Green Energy (OSTI)

Anodes for Li-ion batteries are primarily carbon-based due to their low cost and long cycle life. However, improvements to the Li capacity of carbon anodes, LiC{sub 6} in particular, are necessary to obtain a larger energy density. State-of-the-art light-metal hydrides for hydrogen storage applications often contain Li and involve reactions requiring Li transport, and light-metal ionic hydrides are candidates for novel conversion materials. Given a set of known solid-state and gas-phase reactants, we have determined the phase diagram in the Li-Mg-B-N-H system in the grand canonical ensemble, as a function of lithium chemical potential. We present computational results for several new conversion reactions with capacities between 2400 and 4000 mAh g{sup -1} that are thermodynamically favorable and that do not involve gas evolution. We provide experimental evidence for the reaction pathway on delithiation for the compound Li{sub 4}BN{sub 3}H{sub 10}. While the predicted reactions involve multiple steps, the maximum volume increase for these materials on lithium insertion is significantly smaller than that for Si.

Mason, T.H.; Graetz, J.; Liu, X.; Hong, J.; Majzoub, E.H.

2011-07-28T23:59:59.000Z

275

multicrystalline silicon  

DOE Green Energy (OSTI)

This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to date, and advance four closely related topics. (1) We present a method to decouple macroscopic thermally-induced residual stresses and microscopic bulk defect related stresses. In contrast to previous reports, thermally-induced residual stresses in wafer-sized samples are generally found to be less than 5 MPa, while defect-related stresses can be several times larger. (2) We describe the unique IR birefringence signatures, including stress magnitudes and directions, of common microdefects in mc-Si solar cell materials including: {beta}-SiC and {beta}-Si{sub 3}N{sub 4} microdefects, twin bands, nontwin grain boundaries, and dislocation bands. In certain defects, local stresses up to 40 MPa can be present. (3) We relate observed stresses to other topics of interest in solar cell manufacturing, including transition metal precipitation, wafer mechanical strength, and minority carrier lifetime. (4) We discuss the potential of IBI as a quality-control technique in industrial solar cell manufacturing.

Ganapati, Vidya; Schoenfelder, Stephan; Castellanos, Sergio; Oener, Sebastian; Koepge, Ringo; Sampson, Aaron; Marcus, Matthew A.; Lai, Barry; Morhenn, Humphrey; Hahn, Giso; Bagdahn, Joerg; Buonassisi1, Tonio

2010-05-05T23:59:59.000Z

276

wind power capacity | OpenEI  

Open Energy Info (EERE)

capacity capacity Dataset Summary Description These estimates are derived from a composite of high resolution wind resource datasets modeled for specific countries with low resolution data originating from the National Centers for Environmental Prediction (United States) and the National Center for Atmospheric Research (United States) as processed for use in the IMAGE model. The high resolution datasets were produced by the National Renewable Energy Laboratory (United States), Risø DTU National Laboratory (Denmark), the National Institute for Space Research (Brazil), and the Canadian Wind Energy Association. The data repr Source National Renewable Energy Laboratory Date Released Unknown Date Updated Unknown Keywords area capacity clean energy international

277

Refinery Capacity Report  

U.S. Energy Information Administration (EIA) Indexed Site

Refinery Capacity Report Refinery Capacity Report June 2013 With Data as of January 1, 2013 Independent Statistics & Analysis www.eia.gov U.S. Department of Energy Washington, DC 20585 This report was prepared by the U.S. Energy Information Administration (EIA), the statistical and analytical agency within the U.S. Department of Energy. By law, EIA's data, analyses, and forecasts are independent of approval by any other officer or employee of the United States Government. The views in this report therefore should not be construed as representing those of the Department of Energy or other Federal agencies. Table 1. Number and Capacity of Operable Petroleum Refineries by PAD District and State as of January 1, 2013

278

Dual capacity reciprocating compressor  

DOE Patents (OSTI)

A multi-cylinder compressor particularly useful in connection with northern climate heat pumps and in which different capacities are available in accordance with reversing motor rotation is provided with an eccentric cam on a crank pin under a fraction of the connecting rods, and arranged for rotation upon the crank pin between opposite positions 180[degree] apart so that with cam rotation on the crank pin such that the crank throw is at its normal maximum value all pistons pump at full capacity, and with rotation of the crank shaft in the opposite direction the cam moves to a circumferential position on the crank pin such that the overall crank throw is zero. Pistons whose connecting rods ride on a crank pin without a cam pump their normal rate with either crank rotational direction. Thus a small clearance volume is provided for any piston that moves when in either capacity mode of operation. 6 figs.

Wolfe, R.W.

1984-10-30T23:59:59.000Z

279

Dual capacity reciprocating compressor  

DOE Patents (OSTI)

A multi-cylinder compressor 10 particularly useful in connection with northern climate heat pumps and in which different capacities are available in accordance with reversing motor 16 rotation is provided with an eccentric cam 38 on a crank pin 34 under a fraction of the connecting rods, and arranged for rotation upon the crank pin between opposite positions 180.degree. apart so that with cam rotation on the crank pin such that the crank throw is at its normal maximum value all pistons pump at full capacity, and with rotation of the crank shaft in the opposite direction the cam moves to a circumferential position on the crank pin such that the overall crank throw is zero. Pistons 24 whose connecting rods 30 ride on a crank pin 36 without a cam pump their normal rate with either crank rotational direction. Thus a small clearance volume is provided for any piston that moves when in either capacity mode of operation.

Wolfe, Robert W. (Wilkinsburg, PA)

1984-01-01T23:59:59.000Z

280

Refinery Capacity Report  

U.S. Energy Information Administration (EIA) Indexed Site

Refinery Capacity Report Refinery Capacity Report With Data as of January 1, 2013 | Release Date: June 21, 2013 | Next Release Date: June 20, 2014 Previous Issues Year: 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1997 1995 1994 Go Data series include fuel, electricity, and steam purchased for consumption at the refinery; refinery receipts of crude oil by method of transportation; and current and projected atmospheric crude oil distillation, downstream charge, and production capacities. Respondents are operators of all operating and idle petroleum refineries (including new refineries under construction) and refineries shut down during the previous year, located in the 50 States, the District of Columbia, Puerto Rico, the Virgin Islands, Guam, and other U.S. possessions.

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Effect of aluminum and silicon reactants and process parameters on glass-ceramic waste form characteristics for immobilization of high-level fluorinel-sodium calcined waste  

SciTech Connect

In this report, the effects of aluminum and silicon reactants, process soak time and the initial calcine particle size on glass-ceramic waste form characteristics for immobilization of the high-level fluorinel-sodium calcined waste stored at the Idaho Chemical Processing Plant (ICPP) are investigated. The waste form characteristics include density, total and normalized elemental leach rates, and microstructure. Glass-ceramic waste forms were prepared by hot isostatically pressing (HIPing) a pre-compacted mixture of pilot plant fluorinel-sodium calcine, Al, and Si metal powders at 1050{degrees}C, 20,000 psi for 4 hours. One of the formulations with 2 wt % Al was HIPed for 4, 8, 16 and 24 hours at the same temperature and pressure. The calcine particle size range include as calcined particle size smaller than 600 {mu}m (finer than {minus}30 mesh, or 215 {mu}m Mass Median Diameter, MMD) and 180 {mu}m (finer than 80 mesh, or 49 {mu}m MMD).

Vinjamuri, K.

1993-06-01T23:59:59.000Z

282

High-Resolution X-Ray and Light Beam Induced Current (LBIC) Measurements of Multcrystalline Silicon Solar Cells  

DOE Green Energy (OSTI)

High-resolution, spatially-resolved x-ray Laue patterns and high-resolution light beam induced current (LBIC) measurements are combined to study two multicrystalline solar cells made from the Heat Exchanger Method (HEM) and the Sting Ribbon Growth technique. The LBIC measurements were made at 4 different wavelengths (488, 633, 780, and 980 nm), resulting in penetration depths ranging from <1 {mu}m to >100 {mu}m. There is a strong correlation between the x-ray and LBIC measurements, showing that some twins and grain boundaries are effective in the reduction of local quantum efficiency, while others are benign.

Jellison Jr, Gerald Earle [ORNL; Budai, John D [ORNL; Bennett, Charlee J C [ORNL; Tischler, Jonathan Zachary [ORNL; Duty, Chad E [ORNL; Yelundur, V. [Georgia Institute of Technology; Rohatgi, A. [Georgia Institute of Technology

2010-01-01T23:59:59.000Z

283

Laser wafering for silicon solar.  

Science Conference Proceedings (OSTI)

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

284

Serial Powering of Silicon Sensors  

E-Print Network (OSTI)

Serial powering is a technique to provide power to a number of serially chained detector modules. It is an alternative option to independent powering that is particularly attractive when the number of modules is high, as in largescale silicon tracking detectors for particle physics. It uses a single power cable and a constant current source. On each module power is derived using local shunt regulators. Design aspects of local shunt regulators and system aspects of serial powering will be discussed. Test results and measurements obtained with a silicon strip supermodule will be presented. Specifications of radiation-hard custom serial powering circuitry will be discussed.

Villani, E G; Tyndel, M; Apsimon, R

2007-01-01T23:59:59.000Z

285

Advanced silicon photonic modulators  

E-Print Network (OSTI)

Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

Sorace, Cheryl M

2010-01-01T23:59:59.000Z

286

Crystalline Silicon Photovolatic Cells  

Energy.gov (U.S. Department of Energy (DOE))

Crystalline silicon cells are made of silicon atoms connected to one another to form a crystal lattice. This lattice comprises the solid material that forms the photovoltaic (PV) cell's...

287

Silicon solar cell assembly  

DOE Patents (OSTI)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Burgess, Edward L. (Albuquerque, NM); Nasby, Robert D. (Albuquerque, NM); Schueler, Donald G. (Albuquerque, NM)

1979-01-01T23:59:59.000Z

288

Studying The Kinetics Of Crystalline Silicon Nanoparticle Lithiation With In-Situ Transmission Electron Microscopy  

Science Conference Proceedings (OSTI)

Silicon is an attractive high-capacity anode material for Li-ion batteries, but a comprehensive understanding of the massive ~300% volume change and fracture during lithiation/delithiation is necessary to reliably employ Si anodes. Here, in-situ transmission electron microscopy (TEM) of the lithiation of crystalline Si nanoparticles reveals that the reaction slows down as it progresses into the particle interior. Analysis suggests that this behavior is due to the influence of mechanical stress at the reaction front on the driving force for the reaction. These experiments give insight into the factors controlling the kinetics of this unique reaction.

Mcdowell, Matthew T.; Ryu, Ill; Lee, Seokwoo; Wang, Chong M.; Nix, William D.; Cui, Yi

2012-11-27T23:59:59.000Z

289

Laser wafering for silicon solar.  

SciTech Connect

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

290

Solar Cell Silicon  

Science Conference Proceedings (OSTI)

Jul 31, 2011 ... About this Symposium. Meeting, 2012 TMS Annual Meeting & Exhibition. Symposium, Solar Cell Silicon. Sponsorship, The Minerals, Metals ...

291

Ultralow-Power Silicon Microphotonic Communications Platform  

NLE Websites -- All DOE Office Websites (Extended Search)

Ultralow-Power Silicon Ultralow-Power Silicon Microphotonic Communications Platform 1 R&D 100 Entry Ultralow-Power Silicon Microphotonic Communications Platform 2 R&D 100 Entry Submitting Organization Sandia National Laboratories P. O. Box 5800 Albuquerque New Mexico 87185-1082 USA Michael R. Watts Phone: (505) 284-9616 Fax: (505) 284-7690 mwatts@sandia.gov AFFIRMATION: I affirm that all information submitted as a part of, or supplemental to, this entry is a fair and accurate representation of this product. _____________________________ Michael R. Watts Joint Entry Not applicable Product Name Ultralow-Power Silicon Microphotonic Communications Platform Brief Description We have developed an ultralow-power, high-bandwidth silicon microphotonic communications platform that addresses the bandwidth and power consumption

292

Establishment of the feasibility of a process capable of low cost, high volume production of silane (Phase I), and the pyrolysis of silane to semiconductor-grade silicon (Phase II). Low Cost Silicon Solar Array Project, Task I. Quarterly progress report, April--June 1977  

DOE Green Energy (OSTI)

The purpose of this program is to establish the practicality of a process for the high volume, low cost production of silane and its subsequent pyrolysis into a semi-conductive grade silicon metal. A small process develop unit for producing silane from dichlorosilane (DCS) using a tertiary amine functional ion exchange resin as a catalyst for a redistribution reaction has been operated successfully on what is now a routine basis. High quality silane has been produced in good yield and limiting equipment size has been identified. The silane gas product is essentially free of foreign compounds (to 5 ppM detection limit) and produces a silicon epitaxial film with a resistivity of 20 ohm cm and very strong ''N'' type character. Epi film quality was very good. The overall yield of silane was 92% of theory. The production rate, limited by the 2.66 cm diameter distillation column, was 112 g/hr. Design of a silicon tetrachloride (STC) hydrogenation reactor used to convert co-product STC to trichlorosilane has been completed and fabrication and installation are underway, as is a modification of the silane unit to permit use of trichlorosilane as feed, producing STC and silane. The production of silicon by the pyrolysis of silane is currently being accomplished in a free space reactor. The free space reactor product is a very fine powder which is then consolidated by melting. The melt is cast into rods. Analysis of the product from earlier experiments indicated that metal or graphite liners in the reaction chamber region resulted in product contamination. A quartz liner is currently being evaluated in the reaction chamber. Other identified contamination sources are air borne particles and contamination during melting and/or casting.

Breneman, W.C.; Farrier, E.G.; Mui, J.Y.P.; Rexer, J.

1977-10-01T23:59:59.000Z

293

BY SILICON CRYSTALS  

NLE Websites -- All DOE Office Websites (Extended Search)

c October 29, 1942 a 1 1 _MIGH aECTgFXCATIOH - BY SILICON CRYSTALS . . c .. I n. The excellent pesformmce of Brftieh "red dot" c r y s t a l s f e explained R R due t o the kgife edge contact i n a t A polfehod ~ X ' f l i C B o H i g h frequency m c t l f f c n t f o n 8ependre c r i t i c a l l y on the ape%e;y of the rectifytnc boundary layer o f the crystal, C, For hl#$ comvere~on e f f i c i e n c y , the product c d t h i ~ capacity m a o f ' t h e @forward" (bulk) re-. sistance Rb o f the crystnl must b@ sm%P, depende primarily on the breadth of tha b f f e edge i t s lbngth. The contact am &harefore ~ E L V Q a rather large area wMQh prevents burn-out, thh3 t h e breadth of &h@ knife edge should be bdt8~1 than E~$O$B% % f I - ' amo For a knife edge, this produet very 14ttle upom For a wavsIL~n+3tih of PO emo the eowp,o%a%8sne 4

294

The Influence of High-Energy Lithium Ion Irradiation on Electrical Characteristics of Silicon and GaAs Solar Cells  

E-Print Network (OSTI)

Space-grade Si and GaAs solar cells were irradiated with 15 & 40 MeV Li ions. Illuminated (AM0 condition) and unilluminated I-V curves reveal that the effect of high-energy Li ion irradiation has produced similar effects to that of proton irradiation. However, an additional, and different, defect mechanism is suggested to dominate in the heavier-ion results. Comparison is made with proton-irradiated solar-cell work and with non-ionizing energy-loss (NIEL) radiation-damage models.

B. Jayashree; Ramani; M. C. Radhakrishna; Anil Agrawal; Saif Ahmad Khan; A. Meulenberg

2006-10-20T23:59:59.000Z

295

Texturization of multicrystalline silicon solar cells  

E-Print Network (OSTI)

A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

Li, Dai-Yin

2010-01-01T23:59:59.000Z

296

Electrodeposition of molten silicon  

DOE Patents (OSTI)

Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

De Mattei, Robert C. (Sunnyvale, CA); Elwell, Dennis (Palo Alto, CA); Feigelson, Robert S. (Saratoga, CA)

1981-01-01T23:59:59.000Z

297

Research on stable, high efficiency amorphous silicon multijunction modules. Semiannual technical progress report, 1 May 1991--31 October 1991  

DOE Green Energy (OSTI)

Improvements towards a goal of a 12.5% initial triple-junction module efficiency require the use of a wide gap top-layer for improved open circuit voltage, higher transmission from the transparent front contact and more highly transmitting doped layers. To address the first issue, there has been continued development of a-SiC:H with the utilization of several novel feedstocks to control the atomic structure of the solid. These films have transport properties superior to the best results reported for a-SiC:H. Preliminary results with devices exhibits a stability comparable to a-Si:H, while previous results with a-SiC:H have generally shown for higher rates of degradation. Module fabrication has been refined to the extent that comparable module and small area device efficiencies are readily obtained. Despite the high initial efficiencies (9%--10%) obtained in 935 cm{sup 2} modules employing devices with 4000{Angstrom} thick middle junctions, higher than expected rates of degradation were found. The cause of the anomalous degradation was traced to shunts present in the device arising from defects in the tin oxide coating. NREL degradation results of triple-junction modules showed stabilized performance of the initial efficiency for modules prepared during the period in which shunts were a problem. 20 refs.

Catalano, A.; Arya, R.R.; Bennett, M.; Chen, L.; D`Aiello, R.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Wiedeman, S.; Yang, L. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

1992-02-01T23:59:59.000Z

298

Combustion Synthesis of Silicon Carbide 389 Combustion Synthesis of Silicon Carbide  

E-Print Network (OSTI)

Combustion Synthesis of Silicon Carbide 389 X Combustion Synthesis of Silicon Carbide Alexander S. Mukasyan University of Notre Dame USA 1. Introduction Combustion synthesis (CS) is an effective technique by which combustion synthesis can occur: self - propagating high-temperature synthesis (SHS) and volume

Mukasyan, Alexander

299

High Temperature Oxidation of Silicon Carbide and Advanced Iron-Based Alloys in Steam-Hydrogen Environments  

SciTech Connect

A side by side comparison of the oxidation behavior of zirconium alloys with SiC materials and advanced iron-based alloys is provided. Oxidation tests were conducted in steam and steam-hydrogen environments at 800-1350 C and 0.34-2MPa for durations up to 48 hours. Monolithic SiC specimens as well as SiC/SiC composites were examined during the study where the material recession mechanism appeared to be governed by silica layer volatilization at the surface for CVD SiC. A wide set of austenitic and ferritic steels were also examined where a critical Cr content (>20 wt.%) was shown to be necessary to achieve oxidation resistance at high temperatures. SiC materials and alumina-forming ferritic steels exhibited slowest oxidation kinetics; roughly two orders of magnitude lower than zirconium alloys.

Terrani, Kurt A [ORNL; Keiser, James R [ORNL; Brady, Michael P [ORNL; Cheng, Ting [ORNL; Silva, G W Chinthaka M [ORNL; Pint, Bruce A [ORNL; Snead, Lance Lewis [ORNL

2012-01-01T23:59:59.000Z

300

Research on stable, high-efficiency amorphous silicon multijunction modules. Annual subcontract report, 1 January 1992--28 February 1993  

DOE Green Energy (OSTI)

This report describes the progress made during Phase 2 of the R&D program to obtain high-efficiency amorphous alloy multijunction PV (photovoltaic) modules. The highlight of the work includes: (1) demonstration of world-record small-area efficiency of 11.2% after one-sun light-soaking at 50{degrees}C for 600 h using a dual band gap, double-junction structure; and (2) demonstration of initial module efficiency of 10.6% over 0.09-m{sup 2} (1-ft{sup 2}) area using the same double-junction approach. In addition, fundamental studies on material properties and cell performance have shown an interesting correlation between microstructure in the material and cell efficiency both in the initial and light-degraded conditions.

Guha, S. [United Solar Systems Corp., Troy, MI (US)

1993-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Quantum Zero-error Capacity  

E-Print Network (OSTI)

We define here a new kind of quantum channel capacity by extending the concept of zero-error capacity for a noisy quantum channel. The necessary requirement for which a quantum channel has zero-error capacity greater than zero is given. Finally, we point out some directions on how to calculate the zero-error capacity of such channels.

Rex A. C. Medeiros; Francisco M. De Assis

2006-11-08T23:59:59.000Z

302

Creep Behavior of a Zirconium Diboride-silicon Carbide Composite ...  

Science Conference Proceedings (OSTI)

Presentation Title, Creep Behavior of a Zirconium Diboride-silicon Carbide ... High Temperature Degradation of Carbon-fiber-reinforced Phenolic-resin Matrix

303

Silicon/Graphite –Tin Nano-structured Composites Synthesized by ...  

Science Conference Proceedings (OSTI)

Presentation Title, Silicon/Graphite –Tin Nano-structured Composites Synthesized by High Energy Mechanical Milling for Lithium-ion Rechargeable Batteries ...

304

Capacity Value of Solar Power  

Science Conference Proceedings (OSTI)

Evaluating the capacity value of renewable energy sources can pose significant challenges due to their variable and uncertain nature. In this paper the capacity value of solar power is investigated. Solar capacity value metrics and their associated calculation methodologies are reviewed and several solar capacity studies are summarized. The differences between wind and solar power are examined, the economic importance of solar capacity value is discussed and other assessments and recommendations are presented.

Duignan, Roisin; Dent, Chris; Mills, Andrew; Samaan, Nader A.; Milligan, Michael; Keane, Andrew; O'Malley, Mark

2012-11-10T23:59:59.000Z

305

Load Capacity of Bodies  

E-Print Network (OSTI)

For the stress analysis in a plastic body $\\Omega$, we prove that there exists a maximal positive number $C$, the \\emph{load capacity ratio,} such that the body will not collapse under any external traction field $t$ bounded by $Y_{0}C$, where $Y_0$ is the elastic limit. The load capacity ratio depends only on the geometry of the body and is given by $$ \\frac{1}{C}=\\sup_{w\\in LD(\\Omega)_D} \\frac{\\int_{\\partial\\Omega}|w|dA} {\\int_{\\Omega}|\\epsilon(w)|dV}=\\left\\|\\gamma_D\\right\\|. $$ Here, $LD(\\Omega)_D$ is the space of isochoric vector fields $w$ for which the corresponding stretchings $\\epsilon(w)$ are assumed to be integrable and $\\gamma_D$ is the trace mapping assigning the boundary value $\\gamma_D(w)$ to any $w\\in LD(\\Omega)_D$.

Reuven Segev

2005-11-01T23:59:59.000Z

306

Refinery Capacity Report  

U.S. Energy Information Administration (EIA) Indexed Site

1 1 Idle Operating Total Stream Day Barrels per Idle Operating Total Calendar Day Barrels per Atmospheric Crude Oil Distillation Capacity Idle Operating Total Operable Refineries Number of State and PAD District a b b 14 10 4 1,617,500 1,205,000 412,500 1,708,500 1,273,500 435,000 ............................................................................................................................................... PAD District I 1 0 1 182,200 0 182,200 190,200 0 190,200 ................................................................................................................................................................................................................................................................................................ Delaware......................................

307

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells: Final Technical Report, 1 September 2001--6 March 2005  

SciTech Connect

The objectives for the University of Toledo are to: (1) establish a transferable knowledge and technology base for fabricating high-efficiency triple-junction a-Si-based solar cells, and (2) develop high-rate deposition techniques for the growing a-Si-based and related alloys, including poly-Si, c-Si, a-SiGe, and a-Si films and photovoltaic devices with these materials.

Deng, X.

2006-01-01T23:59:59.000Z

308

EPRI Increased Transmission Capacity Workshop Proceedings  

Science Conference Proceedings (OSTI)

This report documents the proceedings of EPRI's Increased Overhead Transmission Capacity Workshop. The workshop was held on September 20, 2011 at the offices of the American Transmission Company in Waukesha, Wisconsin. Participants included members of the EPRI Increased Overhead Transmission Capacity Task Force. The workshop was a joint effort of two EPRI research projects: (1) Increased Power Flow Guidebook and Ratings for Overhead Lines, and (2) Impact of High Temperature Operation on Conductor Systems...

2011-11-30T23:59:59.000Z

309

Total Natural Gas Underground Storage Capacity  

U.S. Energy Information Administration (EIA) Indexed Site

Capacity Working Gas Capacity of Salt Caverns Working Gas Capacity of Aquifers Working Gas Capacity of Depleted Fields Total Number of Existing Fields Number of Existing Salt...

310

Powerful, Efficient Electric Vehicle Chargers: Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric  

SciTech Connect

ADEPT Project: Currently, charging the battery of an electric vehicle (EV) is a time-consuming process because chargers can only draw about as much power from the grid as a hair dryer. APEI is developing an EV charger that can draw as much power as a clothes dryer, which would drastically speed up charging time. APEI's charger uses silicon carbide (SiC)-based power transistors. These transistors control the electrical energy flowing through the charger's circuits more effectively and efficiently than traditional transistors made of straight silicon. The SiC-based transistors also require less cooling, enabling APEI to create EV chargers that are 10 times smaller than existing chargers.

None

2010-09-14T23:59:59.000Z

311

Cordierite silicon nitride filters  

SciTech Connect

The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

Sawyer, J.; Buchan, B. (Acurex Environmental Corp., Mountain View, CA (United States)); Duiven, R.; Berger, M. (Aerotherm Corp., Mountain View, CA (United States)); Cleveland, J.; Ferri, J. (GTE Products Corp., Towanda, PA (United States))

1992-02-01T23:59:59.000Z

312

Silicon in functional epitaxial oxides: A new group of nanostructures  

Science Conference Proceedings (OSTI)

The ability to integrate low-dimensional crystalline silicon into crystalline insulators with high dielectric constant (high-k) can open the way for a variety of novel applications ranging from high-k replacement in future nonvolatile memory devices ... Keywords: Molecular beam epitaxy, Nanocluster, Nanostructures, Quantum well, Rare-earth oxides, Silicon

A. Fissel; A. Laha; E. Bugiel; D. Kühne; M. Czernohorsky; R. Dargis; H. J. Osten

2008-03-01T23:59:59.000Z

313

Holey Silicon as an Efficient Thermoelectric Material  

SciTech Connect

This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These ?holey silicon? (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35percent porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit. With a ZT value of 0.4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system.

Tang, Jinyao; Wang, Hung-Ta; Hyun Lee, Dong; Fardy, Melissa; Huo, Ziyang; Russell, Thomas P.; Yang, Peidong

2010-09-30T23:59:59.000Z

314

Method of forming crystalline silicon devices on glass  

DOE Patents (OSTI)

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

315

Silicon-film{trademark} on ceramic solar cells. Final report  

DOE Green Energy (OSTI)

The Silicon-Film{trademark} design achieves high performance through the use of a thin silicon layer. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The enhancement in performance requires the incorporation of back-surface passivation and light trapping. The high-performance Silicon-Film{trademark} design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. The properties of the metallurgical barrier must be engineered to implement specific device requirements, such as high back-surface reflectivity. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Lampo, S.M.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [AstroPower, Inc., Newark, DE (United States)

1993-02-01T23:59:59.000Z

316

Silicon-containing copolymers of MMA tested for a positive-tone high-resolution bi-layer e-beam resist system  

Science Conference Proceedings (OSTI)

Copolymers of methylmethacrylate (MMA) and trimethylsilyl-methylmethacrylate (SiMMA) in various molar ratios have been synthesised and characterised for use as a resist in electron beam lithography. The development procedure has been optimised in terms ... Keywords: Bi-layer system, Electron beam lithography, Resist, Silicon-loaded PMMA

J. Maessen; S. van den Boogaart; E. J. K. Verstegen; J. G. Kloosterboer; F. C. M. J. M. van Delft; W. Catsburg; F. H. P. M. Habraken

2005-03-01T23:59:59.000Z

317

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates  

E-Print Network (OSTI)

We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS ...

Bulsara, Mayank

318

Capacities associated with scalar signed Riesz kernels, and analytic capacity  

E-Print Network (OSTI)

The real and imaginari parts of the Cauchy kernel in the plane are scalar Riesz kernels of homogeneity -1. One can associate with each of them a natural notion of capacity related to bounded potentials. The main result of the paper asserts that these capacities are comparable to classical analytic capacity, thus stressing the real variables nature of analytic capacity. Higher dimensional versions of this result are also considered.

Mateu, Joan; Verdera, Joan

2010-01-01T23:59:59.000Z

319

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report  

DOE Green Energy (OSTI)

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01T23:59:59.000Z

320

University Crystalline Silicon Photovoltaics Research and Development  

DOE Green Energy (OSTI)

The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

2008-08-18T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics  

DOE Green Energy (OSTI)

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

Carey, JE; Mazur, E

2005-05-19T23:59:59.000Z

322

Concentrator silicon cell research  

Science Conference Proceedings (OSTI)

This project continued the developments of high-efficiency silicon concentrator solar cells with the goal of achieving a cell efficiency in the 26 to 27 percent range at a concentration level of 150 suns of greater. The target efficiency was achieved with the new PERL (passivated emitter, rear locally diffused) cell structure, but only at low concentration levels around 20 suns. The PERL structure combines oxide passivation of both top and rear surfaces of the cells with small area contact to heavily doped regions on the top and rear surfaces. Efficiency in the 22 to 23 percent range was also demonstrated for large-area concentrator cells fabricated with the buried contact solar cell processing sequence, either when combined with prismatic covers or with other innovative approaches to reduce top contact shadowing. 19 refs.

Green, M.A.; Wenham, S.R.; Zhang, F.; Zhao, J.; Wang, A. [New South Wales Univ., Kensington (Australia). Solar Photovoltaic Lab.

1992-04-01T23:59:59.000Z

323

Silicone plesiotherapy molds  

SciTech Connect

Plesiotherapy, the treatment of superficial lesions by radioactive molds has largely been replaced by teletherapy techniques involving high energy photon and electron beams. There are, however, situations for which a short distance type treatment, in one form or another, is superior to any other presently available. Traditionally, molds have taken the form of rigid devices incorporating clamps to attach them to the patient. This ensures a reproducible geometry about a localized region since the molds are applied on a daily basis. To make such devices requires considerable skill and patience. This article describes an alternative method that eliminates the use of cumbersome devices in many situations. Silicone molds made from a plaster cast model have been found suitable for the treatment of surface lesions and especially for lesions in the oral and nasal cavities. With the use of radioactive gold seeds the molds may be left in place for a few days without fear of them moving.

Karolis, C.; Reay-Young, P.S.; Walsh, W.; Velautham, G.

1983-04-01T23:59:59.000Z

324

Multipath Channels of Unbounded Capacity  

E-Print Network (OSTI)

The capacity of discrete-time, noncoherent, multipath fading channels is considered. It is shown that if the variances of the path gains decay faster than exponentially, then capacity is unbounded in the transmit power.

Koch, Tobias

2008-01-01T23:59:59.000Z

325

Heat capacities of elastic solids  

E-Print Network (OSTI)

The work function is embedded in the equation describing the relationship between the constant volume and constant pressure heat capacities. The modification of the work function results that the relationship between these quantities must be changed accordingly. Using the newly derived work functions of elastic solids the description of the heat capacities and the relationship between the heat capacities are given for solid phase.

Garai, J

2005-01-01T23:59:59.000Z

326

Symmetrical Symplectic Capacity with Applications  

E-Print Network (OSTI)

In this paper, we first introduce the concept of symmetrical symplectic capacity for symmetrical symplectic manifolds, and by using this symmetrical symplectic capacity theory we prove that there exists at least one symmetric closed characteristic (brake orbit and $S$-invariant brake orbit are two examples) on prescribed symmetric energy surface which has a compact neighborhood with finite symmetrical symplectic capacity.

Liu, Chungen

2010-01-01T23:59:59.000Z

327

Research on high-band-gap materials and amorphous-silicon-based solar cells. Annual subcontract report, May 15, 1994--May 14, 1995  

DOE Green Energy (OSTI)

We have conducted a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, tri-methylboron, and hydrogen as precursor gases. The objective of this research is to find out whether such films might offer a superior window layer film for application to wide bandgap a-Si solar cells. The research has shown good optical properties in a-BP:H films, but electrical properties acceptable for use in window layers have not been demonstrated yet. We have also found an interesting, conductive and transparent BPC:H film in a remote deposition region of the reactor, but have been unable to transfer deposition of this film to the standard interelectrode region. We have developed our capability to deposit nip sequence amorphous silicon based solar cells, and have demonstrated an open circuit voltage greater than 0.7 V. We have continued our studies of built-in potentials in a-Si based solar cells using the electroabsorption technique, extending our measurements to include cells with wider bandgap intrinsic layers and Schottky barrier test structures. We have made the first time-of-flight drift mobility measurements on a-Si:H prepared by hot wire (HW) deposition. Initial work has shown that light-soaked HW material can have much better ambipolar diffusion lengths than the plasma-deposited material following extended light soaking. We have performed some theoretical work which addresses a difficulty in understanding photocarrier recombination in a-Si:H first identified by Marvin Silver. In particular, electron-hole recombination is much slower than expected from the well-known {open_quotes}diffusion-controlled{close_quotes} models for Onsager (geminate) recombination and Langevin recombination. This slowness is essential to the success of a-Si in solar cells, but is unexplained. We have done work on high field electron drift mobilities in a-Si:H and on the validity of the Einstein relation connecting the diffusion and drift of holes in a-Si:H.

Schiff, E.A.; Gu, Q.; Jiang, L.; Wang, Q. [Syracuse Univ., NY (United States)

1995-12-01T23:59:59.000Z

328

Hydrogenated amorphous silicon photonics.  

E-Print Network (OSTI)

??Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it… (more)

Narayanan, Karthik

2011-01-01T23:59:59.000Z

329

Silicon Refining II  

Science Conference Proceedings (OSTI)

Research on the Forecast Model of the Boron Removal from Metallurgical Grade ... sufficient level of silicon quality together with relatively low production cost.

330

Nonoriented Silicon Steels  

Science Conference Proceedings (OSTI)

Table 2 Silicon contents, mass densities, and applications of electrical steel sheet and strip...generally used in distribution transformers. Energy savings improve with

331

Nanowire silicon as a material for thermoelectric energy conversion  

Science Conference Proceedings (OSTI)

In order to use silicon as an efficient thermoelectric (TE) material for TE energy conversion, it is necessary to reduce its relatively high thermal conductivity, while maintaining the high power factor. This can be done by structuring silicon into 1-D ...

A. Stranz; J. Kähler; S. Merzsch; A. Waag; E. Peiner

2012-08-01T23:59:59.000Z

332

An Assessment of Railway Capacity  

E-Print Network (OSTI)

In this paper, we review the main concepts and methods to perform capacity analyses, and we present an automated tool that is able to perform several capacity analyses. Capacity is extremely dependent on infrastructure, traffic, and operating parameters. Therefore, an in-depth study of the main factors that influence railway capacity is performed on several Spanish railway infrastructures. The results show how the capacity varies according to factors such as train speed, commercial stops, train heterogeneity, distance between railway signals, and timetable robustness.

M. Abril; F. Barber; A L. Ingolotti; A M. A. Salido; P. Tormos; B A. Lova

2007-01-01T23:59:59.000Z

333

Pulsed LASER for testing silicon strip detectors  

SciTech Connect

This DO Note describes a pulsed LASER setup for testing silicon strip detectors at the Silicon Detector Facility (SiDet) of Fermilab supporting the related projects and, in particular, the DO Silicon Tracker Upgrade. It will be used in the measurements of the efficiency of individual strips and their coupling. The LASER wavelength is 1060 nm, at which the absorption length in silicon is about 2 mm. The LASER setup is capable of producing light pulses with rise time of less than 1 ns, allowing the measurement of charge pulse shaping at individual strips and their capacitive couplings. Due to the high power output of the LASER, safety considerations are included. Also discussed are precautions for the safety of the LASER itself, and how to limit the light to an area smaller than 50,pm of diameter.

Vaz, M.; Cihangir, S.; Rapidis, P.

1993-07-01T23:59:59.000Z

334

Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique  

DOE Patents (OSTI)

A method or producing hydrogenated amorphous silicon on a substrate, comprising the steps of: positioning the substrate in a deposition chamber at a distance of about 0.5 to 3.0 cm from a heatable filament in the deposition chamber; maintaining a pressure in said deposition chamber in the range of about 10 to 100 millitorr and pressure times substrate-filament spacing in the range of about 10 to 100 millitorr-cm, heating the filament to a temperature in the range of about 1,500 to 2,000.degree. C., and heating the substrate to a surface temperature in the range of about 280 to 475.degree. C.; and flowing silicohydride gas into the deposition chamber with said heated filament, decomposing said silicohydride gas into silicon and hydrogen atomic species and allowing products of gas reactions between said atomic species and the silicohydride gas to migrate to and deposit on said substrate while adjusting and maintaining said pressure times substrate-filament spacing in said deposition chamber at a value in said 10 to 100 millitorr range to produce statistically about 3 to 50 atomic collisions between the silicon and hydrogen atomic species migrating to said substrate and undecomposed molecules of the silane or other silicohydride gas in the deposition chamber.

Molenbroek, Edith C. (Utrecht, NL); Mahan, Archie Harvin (Golden, CO); Gallagher, Alan C. (Louisville, CO)

2000-09-26T23:59:59.000Z

335

Entangling capacity with local ancilla  

E-Print Network (OSTI)

We investigate the entangling capacity of a dynamical operation with access to local ancilla. A comparison is made between the entangling capacity with and without the assistance of prior entanglement. An analytic solution is found for the log-negativity entangling capacity of two-qubit gates, which equals the entanglement of the Choi matrix isomorphic to the unitary operator. Surprisingly, the availability of prior entanglement does not affect this result; a property we call resource independence of the entangling capacity. We prove several useful upper-bounds on the entangling capacity that hold for general qudit dynamical operations, and for a whole family of entanglement measures including log-negativity and log-robustness. The log-robustness entangling capacity is shown to be resource independent for general dynamics. We provide numerical results supporting a conjecture that the log-negativity entangling capacity is resource independence for all two-qudit unitaries.

Campbell, Earl T

2010-01-01T23:59:59.000Z

336

Thermally Oxidized Silicon  

NLE Websites -- All DOE Office Websites (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

337

III-V/Silicon Lattice-Matched Tandem Solar Cells  

DOE Green Energy (OSTI)

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. To accomplish this, we have developed techniques for the growth of high crystalline quality lattice-matched GaNPAs on silicon by metal-organic vapor-phase epitaxy.

Geisz, J.; Olson, J.; Friedman, D.; Kurtz, S.; McMahon, W.; Romero, M.; Reedy, R.; Jones, K.; Norman, A.; Duda, A.; Kibbler, A.; Kramer, C.; Young, M.

2005-01-01T23:59:59.000Z

338

Decentralized capacity management and internal pricing  

E-Print Network (OSTI)

Press. Goex, R. (2002). Capacity planning and pricing undermanufacturing on innovation, capacity and pro?tability.Mieghem, V. J. (2003). Capacity management, investment and

Dutta, Sunil; Reichelstein, Stefan

2010-01-01T23:59:59.000Z

339

Capacity consideration of wireless ad hoc networks  

E-Print Network (OSTI)

Capacity ProblemCurrent Research on Capacity of Wireless Ad HocChapter 3 Upper Bound on the Capacity of Wireless Ad Hoc

Tan, Yusong

2008-01-01T23:59:59.000Z

340

Are there capacity limitations in symmetry perception?  

E-Print Network (OSTI)

1980). The demonstration of capacity limitation. Cognitive1972). Visual processing capacity and attentional control.J. (1996). Goodness of CAPACITY LIMIT OF SYMMETRY PERCEPTION

Huang, L Q; Pashler, Harold; Junge, J A

2004-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

The Ergodic Capacity of Interference Networks  

E-Print Network (OSTI)

A. Jafar, “The ergodic capacity of interference networks,”Gupta and P. R. Kumar, “The capacity of wireless networks,”cooperation achieves optimal capacity scaling in ad hoc

Jafar, Syed A

2010-01-01T23:59:59.000Z

342

Mapping Individual Variations in Learning Capacity  

E-Print Network (OSTI)

in working memory capacity. Integrative Physiological andVariations in Learning Capacity Eduardo Mercado IIIdifferences in learning capacity are evident in humans and

Mercado III, Eduardo

2011-01-01T23:59:59.000Z

343

Definition: Capacity Emergency | Open Energy Information  

Open Energy Info (EERE)

Emergency Jump to: navigation, search Dictionary.png Capacity Emergency A capacity emergency exists when a Balancing Authority Area's operating capacity, plus firm purchases from...

344

Nanocomposite for High Capacity Hydrogen Storage  

Researchers at Berkeley Lab have designed a new composite material for hydrogen storage. The nanocomposite materials rapidly absorbs and releases hydr ...

345

Catalytic Reforming High Pressure Downstream Charge Capacity  

U.S. Energy Information Administration (EIA)

-No Data Reported; --= Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Notes: See Definitions ...

346

Process for forming a porous silicon member in a crystalline silicon member  

DOE Patents (OSTI)

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Northrup, M. Allen (Berkeley, CA); Yu, Conrad M. (Antioch, CA); Raley, Norman F. (Danville, CA)

1999-01-01T23:59:59.000Z

347

Correlation between thermal expansion and heat capacity  

E-Print Network (OSTI)

Theoretically predicted linear correlation between the volume coefficient of thermal expansion and the thermal heat capacity was investigated for highly symmetrical atomic arrangements. Normalizing the data of these thermodynamic parameters to the Debye temperature gives practically identical curves from zero Kelvin to the Debye temperature. This result is consistent with the predicted linear correlation. At temperatures higher than the Debye temperature the normalized values of the thermal expansion are always higher than the normalized value of the heat capacity. The detected correlation has significant computational advantage since it allows calculating the volume coefficient of thermal expansion from one experimental data by using the Debye function.

Jozsef Garai

2004-04-25T23:59:59.000Z

348

Electric Capacity | OpenEI  

Open Energy Info (EERE)

Capacity Capacity Dataset Summary Description The New Zealand Ministry of Economic Development publishes an annual Energy Outlook, which presents projections of New Zealand's future energy supply, demand, prices and greenhouse gas emissions. The principle aim of these projections is to inform the national energy debate. Included here are the model results for electricity and generation capacity. The spreadsheet provides an interactive tool for selecting which model results to view, and which scenarios to evaluate; full model results for each scenario are also included. Source New Zealand Ministry of Economic Development Date Released Unknown Date Updated December 15th, 2010 (3 years ago) Keywords Electric Capacity Electricity Generation New Zealand projections

349

Adaptive capacity and its assessment  

SciTech Connect

This paper reviews the concept of adaptive capacity and various approaches to assessing it, particularly with respect to climate variability and change. I find that adaptive capacity is a relatively under-researched topic within the sustainability science and global change communities, particularly since it is uniquely positioned to improve linkages between vulnerability and resilience research. I identify opportunities for advancing the measurement and characterization of adaptive capacity by combining insights from both vulnerability and resilience frameworks, and I suggest several assessment approaches for possible future development that draw from both frameworks and focus on analyzing the governance, institutions, and management that have helped foster adaptive capacity in light of recent climatic events.

Engle, Nathan L.

2011-04-20T23:59:59.000Z

350

Cast polycrystalline silicon photovoltaic cell and module manufacturing technology improvements. Annual subcontract report, 1 December 1993--30 November 1994  

DOE Green Energy (OSTI)

This report describes work performed under a 3-y contract to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance, and expand Solarex`s commercial production capacities. Specific objectives are to reduce manufacturing cost for polycrstalline silicon PV modules to less than $1.20/W and to increase manufacturing capacity by a factor of 3. Solarex is working on casting, wire saws, cell process, module assembly, frameless module development, and automated cell handling.

Wohlgemuth, J. [Solarex Corp., Frederick, MD (United States)

1995-09-01T23:59:59.000Z

351

Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Annual subcontract report, January 1, 1995--December 31, 1995  

DOE Green Energy (OSTI)

The objective of this three-year program is to advance Solarex`s cast polycrystalline silicon manufacturing technology, reduce module production cost, increase module performance and expand Solarex`s commercial production capacities. Two specific objectives of this program are to reduce the manufacturing cost for polycrystalline silicon PV modules to less than $1.20/watt and to increase the manufacturing capacity by a factor of three.

Wohlgemuth, J. [Amoco/Enron Solar, Frederick, MD (United States)

1996-06-01T23:59:59.000Z

352

Preparation of silicon carbide fibers  

DOE Patents (OSTI)

Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

Wei, G.C.

1983-10-12T23:59:59.000Z

353

High velocity continuous-flow reactor for the production of solar grade silicon. Fourth quarterly report, June 25--September 24, 1978  

DOE Green Energy (OSTI)

The main effort has been concentrated on investigating the pyrolysis of tribromosilane in a fluid bed reactor. Excellent results have been achieved in this area with the yields running in excess of 90% of the theoretical possible for the reaction given below: 4SiHBr/sub 3/ = 2H/sub 2/ + 3SiBr/sub 4/ + Si. An average growth rate of 0.5 microns per minute, based on starting and ending sieve analysis data for the bed, has been noted. This coating on the particles is a very fine nodular coherent coating. Since the reaction cited generates 3 moles of SiBr/sub 4/ for each mole of Si, an investigation was begun to determine if SiBr/sub 4/ could be converted to SiHBr/sub 3/ by reaction with a heated bed of silicon and hydrogen. Preliminary experiments have shown that this is readily feasible. This factor allows the description of closed loop process in which only silicon is consumed and produced. The cycle is given below. Decomposition: SiHBr/sub 3/ = Si + 2H/sub 2/ + 3SiBr/sub 4/. Conversion: 2H/sub 2/ + SiBr/sub 4/ + Si/sub (met)/ = SiHBr/sub 3/.

Woerner, L.

1978-09-01T23:59:59.000Z

354

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45, -45, and...

355

Experimental and Molecular Simulation Studies of Silicon ...  

Science Conference Proceedings (OSTI)

Symposium, Solar Cell Silicon ... On the Segregation of Impurities in Solar Silicon ... Silicon PV Wafers: Correlation of Mechanical Properties and Crack ...

356

THE USE OF AMORPHOUS SILICON IN FABRICATING A PHOTOVOLTAIC-THERMAL SYSTEM  

E-Print Network (OSTI)

& irradiation intensity 1 INTRODUCTION With the high increase in PV system production and solar energy use this information and solar irradiation data [4], electricity production during the entire lifetime of the PV system grade silicon Multicrystalline silicon ingot Multicrystalline silicon wafer Solar cell PV module PV

Kherani, Nazir P.

357

Battery Capacity Measurement And Analysis  

E-Print Network (OSTI)

In this paper, we look at different battery capacity models that have been introduced in the literatures. These models describe the battery capacity utilization based on how the battery is discharged by the circuits that consume power. In an attempt to validate these models, we characterize a commercially available lithium coin cell battery through careful measurements of the current and the voltage output of the battery under different load profile applied by a micro sensor node. In the result, we show how the capacity of the battery is affected by the different load profile and provide analysis on whether the conventional battery models are applicable in the real world. One of the most significant finding of our work will show that DC/DC converter plays a significant role in determining the battery capacity, and that the true capacity of the battery may only be found by careful measurements.

Using Lithium Coin; Sung Park; Andreas Savvides; Mani B. Srivastava

2001-01-01T23:59:59.000Z

358

Silicon MOS inductor  

DOE Patents (OSTI)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

Balberg, Isaac (Princeton, NJ)

1981-01-01T23:59:59.000Z

359

Silicon Production and Refining  

Science Conference Proceedings (OSTI)

Mar 6, 2013 ... The photovoltaic (PV) industry is in rapid growth and a large supply of solar grade silicon (SoG-Si) feedstock must be provided to response the ...

360

Silicon nanocrystal memories  

Science Conference Proceedings (OSTI)

In this paper, we present an overview of memory structures fabricated by our group by using silicon nanocrystals as storage nodes. These devices show promising characteristics as candidates for future deep-submicron non-volatile memories.

S. Lombardo; B. De Salvo; C. Gerardi; T. Baron

2004-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Measuring wind plant capacity value  

DOE Green Energy (OSTI)

Electric utility planners and wind energy researchers pose a common question: What is the capacity value of a wind plant? Tentative answers, which can be phrased in a variety of ways, are based on widely varying definitions and methods of calculation. From the utility`s point of view, a resource that has no capacity value also has a reduced economic value. Utility planners must be able to quantify the capacity value of a wind plant so that investment in conventional generating capacity can be potentially offset by the capacity value of the wind plant. Utility operations personnel must schedule its conventional resources to ensure adequate generation to meet load. Given a choice between two resources, one that can be counted on and the other that can`t, the utility will avoid the risky resource. This choice will be reflected in the price that the utility will pay for the capacity: higher capacity credits result in higher payments. This issue is therefore also important to the other side of the power purchase transaction -- the wind plant developer. Both the utility and the developer must accurately assess the capacity value of wind. This article summarizes and evaluates some common methods of evaluating capacity credit. During the new era of utility deregulation in the United States, it is clear that many changes will occur in both utility planning and operations. However, it is my judgement that the evaluation of capacity credit for wind plants will continue to play an important part in renewable energy development in the future.

Milligan, M.R.

1996-01-01T23:59:59.000Z

362

Silicon web process development  

DOE Green Energy (OSTI)

Silicon dendritic web is a ribbon form of silicon produced from the melt without die shaping, and capable of fabrication into solar cells with greater than 15% AM1 conversion efficiency. This quarterly report describes the work carried out during the period April to June 1980, as part of Phase III of a DOE/JPL-sponsored effort to develop silicon web process technology compatible with the national goals for low cost photovoltaic output power. We have successfully demonstrated eight hours of silicon web growth with closed loop melt level control, a key contract milestone. The result was achieved using a feedback system in which the change in output from a laser melt level sensor was used to control the rate at which silicon pellets were fed to replace the material frozen into web crystal. The melt level was controlled to about +- 0.1mm, well within the range required for stable long term web growth. This is an important step toward the development of a fully automated silicon web growth machine. A second major highlight of this quarter was the completion of an engineering design for a semi-automated web growth machine embodying all the desired features developed so far as part of this program (including e.g. melt replenishment, level sensing and control) as well as some system simplifications. The completed design will serve as a basis for complete system automation.

Duncan, C.S.; Seidensticker, R.G.; McHugh, J.P.; Skutch, M.E.; Hopkins, R.H.

1980-07-15T23:59:59.000Z

363

Silicon halide-alkali metal flames as a source of solar grade silicon. Final report  

DOE Green Energy (OSTI)

The object of this program was to determine the feasibility of using continuous high-temperature reactions of alkali metals and silicon halides to produce silicon in large quantities and of suitable purity for use in the production of photovoltaic solar cells. Equilibrium calculations showed that a range of conditions were available where silicon was produced as a condensed phase but the byproduct alkali metal salt was a vapor. A process was proposed using the vapor phase reaction of Na with SiCl/sub 4/. Low pressure experiments were performed demonstrating that free silicon was produced and providing experience with the construction of reactant vapor generators. Further experiments at higher reagent flow rates were performed in a low temperature flow tube configuration with co-axial injection of reagents. Relatively pure silicon was produced in these experiments. A high temperature graphite flow tube was built and continuous separation of Si from NaCl was demonstrated. A larger-scaled well-stirred reactor was built. Experiments were performed to investigate the compatibility of graphite-based reactor materials of construction with sodium. At 1100 to 1200 K none of these materials were found to be suitable. At 1700 K the graphites performed well with little damage except to coatings of pyrolytic graphite and silicon carbide which were damaged.

Olson, D.B.; Miller, W.J.; Gould, R.K.

1980-01-01T23:59:59.000Z

364

Underground Natural Gas Storage Capacity  

Gasoline and Diesel Fuel Update (EIA)

. . Underground Natural Gas Storage Capacity by State, December 31, 1996 (Capacity in Billion Cubic Feet) Table State Interstate Companies Intrastate Companies Independent Companies Total Number of Active Fields Capacity Number of Active Fields Capacity Number of Active Fields Capacity Number of Active Fields Capacity Percent of U.S. Capacity Alabama................. 0 0 1 3 0 0 1 3 0.04 Arkansas ................ 0 0 3 32 0 0 3 32 0.40 California................ 0 0 10 470 0 0 10 470 5.89 Colorado ................ 4 66 5 34 0 0 9 100 1.25 Illinois ..................... 6 259 24 639 0 0 30 898 11.26 Indiana ................... 6 16 22 97 0 0 28 113 1.42 Iowa ....................... 4 270 0 0 0 0 4 270 3.39 Kansas ................... 16 279 2 6 0 0 18 285 3.57 Kentucky ................ 6 167 18 49 0 0 24 216 2.71 Louisiana................ 8 530 4 25 0 0 12 555 6.95 Maryland ................ 1 62

365

COMMUNITY CAPACITY BUILDING THROUGH TECHNOLOGY  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

COMMUNITY CAPACITY BUILDING THROUGH TECHNOLOGY COMMUNITY CAPACITY BUILDING THROUGH TECHNOLOGY Empowering Communities in the Age of E-Government Prepared by Melinda Downing, Environmental Justice Program Manager, U.S. Department of Energy MAR 06 MARCH 2006 Since 1999, the Department of Energy has worked with the National Urban Internet and others to create community capacity through technology.  Empowering Communities in the Age of E-Government Table of Contents Message from the Environmental Justice Program Manager . . . . . . . . 3 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Partnerships. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Process Chart: From Agency to Community. . . . . . . . . . . . . . . . . . . 7 Case Studies. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

366

Silicon Wafers for the Mesoscopic Era  

Science Conference Proceedings (OSTI)

... Silicon: Surface COPS - Capacitor Defect ... CoO - Wafer Diameter – Expand interaction with Super Silicon Initiative and maintain ...

367

generation capacity | OpenEI  

Open Energy Info (EERE)

generation capacity generation capacity Dataset Summary Description This dataset comes from the Energy Information Administration (EIA), and is part of the 2011 Annual Energy Outlook Report (AEO2011). Source EIA Date Released April 26th, 2011 (3 years ago) Date Updated Unknown Keywords AEO Electricity electricity market module region generation capacity Data application/vnd.ms-excel icon AEO2011: Electricity Generation Capacity by Electricity Market Module Region and Source- Reference Case (xls, 10.6 KiB) Quality Metrics Level of Review Peer Reviewed Comment Temporal and Spatial Coverage Frequency Annually Time Period 2008-2035 License License Open Data Commons Public Domain Dedication and Licence (PDDL) Comment Rate this dataset Usefulness of the metadata Average vote Your vote

368

Building Regulatory Capacity for Change  

NLE Websites -- All DOE Office Websites (Extended Search)

Regulatory Capacity for Change PRESENTED BY Sarah Spencer-Workman, LEED AP July 27, 2011 "How to identify and review laws relevant to buildings and find places and opportunities...

369

Capacity Markets and Market Stability  

Science Conference Proceedings (OSTI)

The good news is that market stability can be achieved through a combination of longer-term contracts, auctions for far enough in the future to permit new entry, a capacity management system, and a demand curve. The bad news is that if and when stable capacity markets are designed, the markets may seem to be relatively close to where we started - with integrated resource planning. Market ideologues will find this anathema. (author)

Stauffer, Hoff

2006-04-15T23:59:59.000Z

370

Capacity Value of Wind Power  

Science Conference Proceedings (OSTI)

Power systems are planned such that they have adequate generation capacity to meet the load, according to a defined reliability target. The increase in the penetration of wind generation in recent years has led to a number of challenges for the planning and operation of power systems. A key metric for system adequacy is the capacity value of generation. The capacity value of a generator is the contribution that a given generator makes to overall system adequacy. The variable and stochastic nature of wind sets it apart from conventional energy sources. As a result, the modeling of wind generation in the same manner as conventional generation for capacity value calculations is inappropriate. In this paper a preferred method for calculation of the capacity value of wind is described and a discussion of the pertinent issues surrounding it is given. Approximate methods for the calculation are also described with their limitations highlighted. The outcome of recent wind capacity value analyses in Europe and North America are highlighted with a description of open research questions also given.

Keane, Andrew; Milligan, Michael; Dent, Chris; Hasche, Bernhard; DAnnunzio, Claudine; Dragoon, Ken; Holttinen, Hannele; Samaan, Nader A.; Soder, Lennart; O'Malley, Mark J.

2011-05-04T23:59:59.000Z

371

Titanium-Silicon Carbide Composite Lattice Structures  

E-Print Network (OSTI)

Titanium-Silicon Carbide Composite Lattice Structures A Dissertation Presented to the faculty utilize carbon fiber reinforced polymer (CFRP) honeycombs and lattice structures. Few options exist be applied to SiC monofilaments to create very high specific modulus and strength fibers

Wadley, Haydn

372

Silicon Border Development LLC | Open Energy Information  

Open Energy Info (EERE)

Silicon Border Development LLC Silicon Border Development LLC Jump to: navigation, search Name Silicon Border Development LLC Place Poway, California Zip 92064 Sector Solar Product US-based developer of industrial parks with a focus on high-technology industry such as semiconductors and solar. Coordinates 32.95459°, -117.041984° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.95459,"lon":-117.041984,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

373

Light Ions Response of Silicon Carbide Detectors  

E-Print Network (OSTI)

Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18 MeV were used. The diode active-region depletion-thickness, the linearity of the response, energy resolution and signal rise-time were measured for different values of the applied reverse bias. Moreover the radiation damage on SiC diodes irradiated with 53 MeV 16O beam has been explored. The data show that SiC material is radiation harder than silicon but at least one order of magnitude less hard than epitaxial silicon diodes. An inversion in the signal was found at a fluence of 10^15 ions/cm^2.

M. De Napoli; G. Raciti; E. Rapisarda; C. Sfienti

2006-12-14T23:59:59.000Z

374

Akros Silicon | Open Energy Information  

Open Energy Info (EERE)

Akros Silicon Akros Silicon Jump to: navigation, search Name Akros Silicon Place Folsom, California Zip 95630 Product Akros Silicon specilizes in fabless semicondutors used for Power Over Ethernet, networks, and broadband. References Akros Silicon[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Akros Silicon is a company located in Folsom, California . References ↑ "Akros Silicon" Retrieved from "http://en.openei.org/w/index.php?title=Akros_Silicon&oldid=341960" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load)

375

It's Elemental - The Element Silicon  

NLE Websites -- All DOE Office Websites (Extended Search)

Number: 3 Group Number: 14 Group Name: none What's in a name? From the Latin word for flint, silex. Say what? Silicon is pronounced as SIL-ee-ken. History and Uses: Silicon was...

376

Silicon Valley Power - Solar Electric Buy Down Program | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar Electric Buy Down Program Solar Electric Buy Down Program Silicon Valley Power - Solar Electric Buy Down Program < Back Eligibility Commercial Residential Savings Category Solar Buying & Making Electricity Maximum Rebate Residential: $20,000 Program Info State California Program Type Utility Rebate Program Rebate Amount Incentives step down over time as installed capacity goals are met. Check program web site for current incentive level. '''Rebate levels as of 9/20/12:''' Residential: $2.00/watt AC Commercial (up to 100 kW): $1.10/watt AC Commercial (>100 kW to 1 MW): $0.15/kWh for 5 years Provider Silicon Valley Power Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as certain installed

377

Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998  

DOE Green Energy (OSTI)

This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') hole drift mobilities in some specially prepared a-Si:H samples. Disturbingly, solar cells made with such materials did not show improved efficiencies. Researchers significantly clarified the relationship of ambipolar diffusion-length measurements to hole drift mobilities in a-Si:H, and have shown that the photocapacitance measurements can be interpreted in terms of hole drift mobilities in amorphous silicon. They also completed a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, trimethylboron, and hydrogen as precursor gases.

Schiff, E. A.; Gu, Q.; Jiang, L.; Lyou, J.; Nurdjaja, I.; Rao, P. (Department of Physics, Syracuse University)

1998-12-28T23:59:59.000Z

378

Method for forming fibrous silicon carbide insulating material  

DOE Patents (OSTI)

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Wei, George C. (Oak Ridge, TN)

1984-01-01T23:59:59.000Z

379

Method for forming fibrous silicon carbide insulating material  

DOE Patents (OSTI)

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Wei, G.C.

1983-10-12T23:59:59.000Z

380

Lumpy capacity investment and disinvestment dynamics’, Operations Research forthcoming  

E-Print Network (OSTI)

Capacity addition and withdrawal decisions are among the most important strategic decisions made by …rms in oligopolistic industries. In this paper, we develop and analyze a fully dynamic model of an oligopolistic industry with lumpy capacity and lumpy investment/disinvestment. We use our model to answer two questions. First, what economic factors facilitate preemption races? Second, what economic factors facilitate capacity coordination? We show that low product di¤erentiation, low investment sunkness, and high depreciation promote preemption races. We also show that low product di¤erentiation and low investment sunkness promote capacity coordination. Although depreciation removes capacity, it may impede capacity coordination. Finally, we show that, at least over some range of parameter values, …rms’expectation plays a key role in determining whether or not industry dynamics are characterized by preemption races and capacity coordination. Taken together, our results suggest that preemption races and excess capacity in the short run often go hand-in-hand with capacity coordination in the long run. We thank Je ¤ Campbell, Ron Borkovsky, and Steve Kryukov for helpful comments and discussions. Besanko

David Besanko; Ulrich Doraszelski; Lauren Xiaoyuan; Lu Mark Satterthwaite

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Micromachined silicon electrostatic chuck  

DOE Patents (OSTI)

In the field of microelectronics, and in particular the fabrication of microelectronics during plasma etching processes, electrostatic chucks have been used to hold silicon wafers during the plasma etching process. Current electrostatic chucks that operate by the {open_quotes}Johnson-Rahbek Effect{close_quotes} consist of a metallic base plate that is typically coated with a thick layer of slightly conductive dielectric material. A silicon wafer of approximately the same size as the chuck is placed on top of the chuck and a potential difference of several hundred volts is applied between the silicon and the base plate of the electrostatic chuck. This causes an electrostatic attraction proportional to the square of the electric field in the gap between the silicon wafer and the chuck face. When the chuck is used in a plasma filled chamber the electric potential of the wafer tends to be fixed by the effective potential of the plasma. The purpose of the dielectric layer on the chuck is to prevent the silicon wafer from coming into direct electrical contact with the metallic part of the chuck and shorting out the potential difference. On the other hand, a small amount of conductivity appears to be desirable in the dielectric coating so that much of its free surface between points of contact with the silicon wafer is maintained near the potential of the metallic base plate; otherwise, a much larger potential difference would be needed to produce a sufficiently large electric field in the vacuum gap between the wafer and chuck. Typically, the face of the chuck has a pattern of grooves in which about 10 torr pressure of helium gas is maintained. This gas provides cooling (thermal contact) between the wafer and the chuck. A pressure of 10 torr is equivalent to about 0.2 psi.

Anderson, R.A.; Seager, C.H.

1994-12-31T23:59:59.000Z

382

Nanoporous silicon as drug delivery systems for cancer therapies  

Science Conference Proceedings (OSTI)

Porous silicon nanoparticles have been established as excellent candidates for medical applications as drug delivery devices, due to their excellent biocompatibility, biodegradability, and high surface area. The simple fabrication method by electrochemical ...

Sazan M. Haidary; Emma P. Córcoles; Nihad K. Ali

2012-01-01T23:59:59.000Z

383

Harmful Shunting Mechanisms Found in Silicon Solar Cells (Revised...  

NLE Websites -- All DOE Office Websites (Extended Search)

for the degradation in open-circuit voltage and high dark currents in epitaxial silicon solar cells. The technique is also appli- cable to other PV technologies such as CIGS and...

384

Reactor physics assessment of thick silicon carbide clad PWR fuels  

E-Print Network (OSTI)

High temperature tolerance, chemical stability and low neutron affinity make silicon carbide (SiC) a potential fuel cladding material that may improve the economics and safety of light water reactors (LWRs). "Thick" SiC ...

Bloore, David A. (David Allan)

2013-01-01T23:59:59.000Z

385

Indium oxide/n-silicon heterojunction solar cells  

DOE Patents (OSTI)

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1982-12-28T23:59:59.000Z

386

Electrochemical thinning of silicon  

DOE Patents (OSTI)

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Medernach, J.W.

1994-01-11T23:59:59.000Z

387

Self-Aligned Cu-Si Core-Shell Nanowire Array as a High-Performance Anode for Li-Ion Batteries  

SciTech Connect

Silicon nanowires (NWs) have been reported as a promising anode that demonstrated high capacity without pulverization during cycling, however, they present some technical issues that remain to be solved. The high aspect ratio of the NWs and their small contact areas with the current collector cause high electrical resistance, which results in inefficient electron transport. The nano-size interface between a NW and the substrate experiences high shear stress during lithiation, causing the wire to separate from the current collector. In addition, most reported methods for producing silicon NWs involve high-temperature processing and require catalysts that later become contaminants. This study developed a new self-aligned Cu-Si core-shell NW array using a low-temperature, catalyst-free process to address the issues described. The silicon shell is amorphous as synthesized and accommodates Li-ions without phase transformation. The copper core functions as a built-in current collector to provide very short (nm) electron transport pathways as well as backbone to improve mechanical strength. Initial electrochemical evaluation has demonstrated good capacity retention and high Coulombic efficiency for this new anode material in a half-cell configuration. No wire fracture or core-shell separation was observed after cycling. However, electrolyte decomposition products largely covered the top surface of the NW array, restricting electrolyte access and causing capacity reduction at high charging rates.

Qu, Jun [ORNL; Li, Huaqing [ORNL; Henry Jr, John James [ORNL; Martha, Surendra K [ORNL; Dudney, Nancy J [ORNL; Lance, Michael J [ORNL; Mahurin, Shannon Mark [ORNL; Besmann, Theodore M [ORNL; Dai, Sheng [ORNL

2012-01-01T23:59:59.000Z

388

Comparing capacities and delays at major European and American airports  

E-Print Network (OSTI)

Successful air transport systems must satisfy the demand for flights while maintaining a high level of service and safety. For airports, which have limited capacities, policy-makers must compromise between maximizing the ...

Morisset, Thomas (Thomas Marc)

2010-01-01T23:59:59.000Z

389

Research Opportunities in Crystalline Silicon Photovoltaics for the 21st Century: Preprint  

DOE Green Energy (OSTI)

Crystalline silicon continues to be the dominant semiconductor material used for terrestrial photovoltaics. This paper discusses the scientific issues associated with silicon photovoltaics processing and cell design that may yield cell and module performance improvements, both evolutionary and revolutionary in nature. We first survey critical issues in ''thick'' crystalline silicon photovoltaics, including novel separations processes for impurity removal, impurity and defect fundamentals, interface passivation, the role of hydrogen, and high-throughput, kinetically-limited materials processing. Second, we outline emerging opportunities for creation of a very different ''thin-layer'' silicon cell structure, including the scientific issues and engineering challenges associated with thin-layer silicon processing and cell design.

Atwater, H. A. (California Institute of Technology); Sopori, B.; Ciszek, T. (National Renewable Energy Laboratory); Feldman, L. C. (Vanderbilt University); Gee, J. (Sandia National Laboratories); Rohatgi, A. (Georgia Institute of Technology)

1999-04-01T23:59:59.000Z

390

Optimal Capacity Adjustments for Supply Chain Control  

E-Print Network (OSTI)

Decisions on capacity are often treated separately from those of production and inventory. In most situations, capacity issues are longer-term, so capacity-related decisions are considered strategic and thus not part of ...

Budiman, Benny

391

production capacity | OpenEI  

Open Energy Info (EERE)

production capacity production capacity Dataset Summary Description No description given. Source Oak Ridge National Laboratory Date Released November 30th, 2009 (4 years ago) Date Updated Unknown Keywords biodiesel ethanol location production capacity transportation Data application/zip icon Biorefineries.zip (zip, 7 MiB) Quality Metrics Level of Review Some Review Comment Temporal and Spatial Coverage Frequency Time Period License License Other or unspecified, see optional comment below Comment Rate this dataset Usefulness of the metadata Average vote Your vote Usefulness of the dataset Average vote Your vote Ease of access Average vote Your vote Overall rating Average vote Your vote Comments Login or register to post comments If you rate this dataset, your published comment will include your rating.

392

installed capacity | OpenEI  

Open Energy Info (EERE)

installed capacity installed capacity Dataset Summary Description Estimates for each of the 50 states and the entire United States show Source Wind Powering America Date Released February 04th, 2010 (4 years ago) Date Updated April 13th, 2011 (3 years ago) Keywords annual generation installed capacity usa wind Data application/vnd.ms-excel icon Wind potential data (xls, 102.4 KiB) Quality Metrics Level of Review Some Review Comment Temporal and Spatial Coverage Frequency Time Period License License Other or unspecified, see optional comment below Comment Work of the U.S. Federal Government. Rate this dataset Usefulness of the metadata Average vote Your vote Usefulness of the dataset Average vote Your vote Ease of access Average vote Your vote Overall rating Average vote Your vote Comments

393

Building Regulatory Capacity for Change  

NLE Websites -- All DOE Office Websites (Extended Search)

Regulatory Capacity for Regulatory Capacity for Change PRESENTED BY Sarah Spencer-Workman, LEED AP July 27, 2011 "How to identify and review laws relevant to buildings and find places and opportunities that can accept changes that would support building energy objectives" Presentation Highlights Rulemaking Community and Stakeholder Identification To Support Code Changes Engagement: Building Capacity for Change Pay It Forward RULEMAKING : Plan Development and Research of Laws Relevant to Buildings How is it conducted? 'Landscape' Review Key words or phrases to look for Identify "home rule" jurisdictions Update and review cycle built in 'Landscape' Review:

394

Evaluation of selected chemical processes for production of low-cost silicon (Phase II). Silicon Material Task Low-Cost Silicon Solar Array Project. Eighth quarterly progress report, July 1, 1977--September 30, 1977. [Zinc vapor reduction of silicon tetrachloride in fluidized bed of seed particles  

DOE Green Energy (OSTI)

Progress is reported in the design of a large experimental facility for the preparation of high-purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free-flowing granular product. As of July 25, 1977, the capacity goal for the experimental facility was raised from 25 to 50 MT Si/year. Process flow diagrams and materials/energy flow sheets have been revised to conform to the higher capacity and a plant layout has been developed for locating the facility within an available structure. A unit-by-unit review of instrumentation and other requirements has been made, with the inclusion of those items in the flow diagrams and flow sheets. Alternative designs are presented for a silicon carbide-coated carbon-lined fluidized-bed reactor contained in hot-wall stainless steel, including alternative designs for zinc vaporizers based on detailed heat-transfer calculations. Conditions and equipment for the conversion of by-product chlorine to hypochlorite for use in the treatment of sewage effluent locally were defined. The logistics of 19 percent NaOH delivery and pick-up of 14 percent NaOCL was worked out and equipment suppliers were identified. Heat dissipation requirements for the fluidized bed, Zn/ZnCl/sub 2/ condenser, and SiCl/sub 4/ waste disposal sections were established. Resistivity and purity data were obtained for DuPont's silicon prepared by batchwise zinc reduction of SiCl/sub 4/. A preliminary safety review was made of the experimental facility. During the report period, the miniplant was operated to (1) provide 2.2 kg of product for JPL evaluation, (2) evaluate methods of product withdrawal, and (3) test three zinc vaporizer concepts. Results of the zinc vaporizer tests were consistent with concurrent heat-transfer calculations. An average value of approximately 450 Btu hr/sup -1/ ft/sup -2/ F/sup -1/ for heat transfer from graphite to boiling zinc (1 atm) was determined.

Blocher, J.M. Jr.; Browning, M.F.; Wilson, W.J.; Carmichael, D.C.

1977-10-20T23:59:59.000Z

395

An award-winning technology that can boost the capacity of rechargeabl...  

NLE Websites -- All DOE Office Websites (Extended Search)

An award-winning technology that can boost the capacity of rechargeable lithium-ion batteries has just gotten even better. Schematic of an ideal binder system for high-capacity...

396

Crystalline silicon processing  

DOE Green Energy (OSTI)

This presentation (consisting of vugraphs) first provides the background motivation for Sandia`s effort for the development of improved crystalline silicon solar cells. It then discusses specific results and progress, and concludes with a brief discussion of options for next year.

Basore, P.A.

1994-07-13T23:59:59.000Z

397

Worldwide Energy Efficiency Action through Capacity Building...  

Open Energy Info (EERE)

Worldwide Energy Efficiency Action through Capacity Building and Training (WEACT) Jump to: navigation, search Logo: Worldwide Energy Efficiency Action through Capacity Building and...

398

Working and Net Available Shell Storage Capacity  

U.S. Energy Information Administration (EIA) Indexed Site

and tank farms. Excludes storage capacity of refineries, fuel ethanol plants, and pipelines. 2 Percent exclusive use is that portion of capacity in operation that is for the...

399

Property:Cooling Capacity | Open Energy Information  

Open Energy Info (EERE)

Capacity Jump to: navigation, search This is a property of type Number. Pages using the property "Cooling Capacity" Showing 2 pages using this property. D Distributed Generation...

400

Economic Dispatch of Electric Generation Capacity | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Economic Dispatch of Electric Generation Capacity Economic Dispatch of Electric Generation Capacity A report to congress and the states pursuant to sections 1234 and 1832 of the...

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

California Working Natural Gas Underground Storage Capacity ...  

U.S. Energy Information Administration (EIA) Indexed Site

Working Natural Gas Underground Storage Capacity (Million Cubic Feet) California Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Decade Year-0 Year-1 Year-2...

402

Resource Adequacy Capacity - Power Marketing - Sierra Nevada...  

NLE Websites -- All DOE Office Websites (Extended Search)

Resource Adequacy Capacity Resource Adequacy Capacity Resource Adequacy Plan - Current Local Resource Adequacy Plan (Word - 175K) - Notice of Proposed Final Resource Adequacy Plan...

403

Washington Natural Gas Underground Storage Acquifers Capacity...  

U.S. Energy Information Administration (EIA) Indexed Site

Underground Storage Acquifers Capacity (Million Cubic Feet) Washington Natural Gas Underground Storage Acquifers Capacity (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

404

Missouri Natural Gas Underground Storage Acquifers Capacity ...  

U.S. Energy Information Administration (EIA) Indexed Site

Underground Storage Acquifers Capacity (Million Cubic Feet) Missouri Natural Gas Underground Storage Acquifers Capacity (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

405

Mississippi Working Natural Gas Underground Storage Capacity...  

U.S. Energy Information Administration (EIA) Indexed Site

Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Mississippi Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Decade Year-0 Year-1 Year-2...

406

Minnesota Natural Gas Underground Storage Acquifers Capacity...  

U.S. Energy Information Administration (EIA) Indexed Site

Underground Storage Acquifers Capacity (Million Cubic Feet) Minnesota Natural Gas Underground Storage Acquifers Capacity (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

407

Pennsylvania Working Natural Gas Underground Storage Capacity...  

U.S. Energy Information Administration (EIA) Indexed Site

Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Pennsylvania Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Decade Year-0 Year-1 Year-2...

408

Washington Working Natural Gas Underground Storage Capacity ...  

U.S. Energy Information Administration (EIA) Indexed Site

Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Washington Working Natural Gas Underground Storage Capacity (Million Cubic Feet) Decade Year-0 Year-1 Year-2...

409

EIA Crude Oil Distillation Capacity (Table 36)  

U.S. Energy Information Administration (EIA)

(Important Note on Sources of Crude Oil Distillation Capacity Estimates) Table 3.6 World Crude Oil Distillation Capacity, January 1, 1970 - January 1, 2009

410

Silicon on insulator achieved using electrochemical etching  

DOE Patents (OSTI)

Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

McCarthy, A.M.

1997-10-07T23:59:59.000Z

411

Silicon on insulator achieved using electrochemical etching  

DOE Patents (OSTI)

Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50.degree. C. or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense.

McCarthy, Anthony M. (Menlo Park, CA)

1997-01-01T23:59:59.000Z

412

Method of fabricating silicon carbide coatings on graphite surfaces  

DOE Patents (OSTI)

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

Varacalle, Jr., Dominic J. (Idaho Falls, ID); Herman, Herbert (Port Jefferson, NY); Burchell, Timothy D. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

413

HEAT CAPACITY MEASUREMENTS IN PULSED MAGNETIC FIELDS  

E-Print Network (OSTI)

(World Scientific, to be published) The new NHMFL 60T quasi-continuous magnet produces a flat-top field for a period of 100 ms at 60 Tesla, and for longer time at lower fields, e.g. 0.5 s at 35 Tesla. We have developed for the first time the capability to measure heat capacity at very high magnetic fields in the NHMFL 60T quasi-continuous magnet at LANL, using a probe built out of various plastic materials. The field plateau allows us to utilize a heat-pulse method to obtain heat capacity data. Proof-of-principle heat capacity experiments were performed on a variety of correlated electron systems. Both magnet performance characteristics and physical properties of various materials studied hold out a promise of wide application of this new tool. 1 I. TECHNIQUE The 60 Tesla Long-Pulse (60TLP) magnet was recently commissioned at the Los Alamos National Laboratory. This magnet produces a flat-top field for a period of 100 ms at 60

M. Jaime; R. Movshovich; J. L. Sarrao; J. Kim; G. Stewart; W. P. Beyermann

1999-01-01T23:59:59.000Z

414

NREL: Photovoltaics Research - Silicon Materials and Devices R&D  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Materials and Devices R&D Silicon Materials and Devices R&D R&D 100 Awards Since 2010, we have won three R&D 100 Awards. Flash Quantum Efficiency (Flash QE) System for Solar Cells Innovalight Silicon Ink Process Low-Cost Black Silicon Etching Process Graphic of three layers. The bottom layer, called inexpensive substrate, is white. Middle dark blue layer is called the seed. Top light blue layer has the text epi c-Si absorber. Schematic diagram of the film crystal silicon solar cell. A high-quality crystal silicon absorber is grown epitaxially on a seed layer applied to an inexpensive foreign substrate (e.g., display glass or rolled metal foil). At NREL, we are developing various emitter, back-surface field, and light-trapping strategies. NREL has world-leading research capabilities and expertise in silicon

415

Establishment of the feasibility of a process capable of low cost, high volume production of silane, SiH/sub 4/. Low cost silicon solar array project, Task I. Quarterly progress report, October 1, 1976--December 31, 1976  

DOE Green Energy (OSTI)

In the study of a process for the low cost, high volume production of silane (SiH/sub 4/) via redistribution of chlorohydrosilanes, the longevity and nature of the amine functional ion exchange resin catalyst was investigated. A modest decline in catalyst activity appears to be the result of loss of amine function during the initiallizing period. Long term activity remains quite high. In preparation for additional studies, deuterium labeled trichlorosilane is being prepared. The nominally 5 kg/day silane-from-dichlorosilane mini-plant has been constructed, leak tested and conditioned for start up. Approval for operation from a Pre-start Up Safety Review Team has been received in conjunction with an approved flameless method for venting silane. Laboratory studies of the hydrogenation of silicon tetrachloride co-product of the silane process are continuing along with the design of a mini-plant scale unit capable of pressurized operation. Preliminary design of a maxi-plant to integrate the entire process is also underway.

Breneman, W.C.; Mui, J.Y.P.

1977-01-01T23:59:59.000Z

416

In-Situ TEM Study Of Lithiation Behavior Of Silicon Nanoparticles Attached To And Embedded In A Carbon Matrix  

Science Conference Proceedings (OSTI)

Rational design of silicon and carbon nanocomposite with a special topological feature has been demonstrated to be a feasible way for mitigating the capacity fading associated with the large volume change of silicon anode in lithium ion batteries. Although the lithiation behavior of silicon and carbon as individual component has been well understood, lithium ion transport behavior across a network of silicon and carbon are still lacking. In this paper, we probe the lithiation behavior of silicon nanoparticles attached to and embedded in a carbon nanofiber using in-situ TEM and continuum mechanical calculation. We found that aggregated silicon nanoparticles show contact flattering upon initial lithiation, which is characteristically analogous to the classic sintering of powder particles by neck-growth mechanism. As compared with the surface-attached silicon particle, particles embedded in the carbon matrix show delayed lithiation. Depending on the strength of the carbon matrix, lithiation of the embedded silicon nanoparticle can lead to the fracture of the carbon fiber. These observations provide insights on lithium ion transport in the network structured composite of silicon and carbon, and ultimately provide fundamental guidance for mitigating the failure of battery due to the large volume change of silicon anode.

Gu, Meng; Li, Ying; Li, Xiaolin; Hu, Shenyang Y.; Zhang, Xiangwu; Xu, Wu; Thevuthasan, Suntharampillai; Baer, Donald R.; Zhang, Jiguang; Liu, Juan; Wang, Chong M.

2012-08-23T23:59:59.000Z

417

Entangling and disentangling capacities of nonlocal maps  

E-Print Network (OSTI)

Entangling and disentangling capacities are the key manifestation of the nonlocal content of a quantum operation. A lot of effort has been put recently into investigating (dis)entangling capacities of unitary operations, but very little is known about capacities of non-unitary operations. Here we investigate (dis)entangling capacities of unital CPTP maps acting on two qubits.

Berry Groisman

2007-04-08T23:59:59.000Z

418

Louisiana Refinery Catalytic Reforming Downstream Charge Capacity ...  

U.S. Energy Information Administration (EIA)

Louisiana Refinery Catalytic Reforming Downstream Charge Capacity as of January 1 (Barrels per Stream Day)

419

Oklahoma Refinery Vacuum Distillation Downstream Charge Capacity ...  

U.S. Energy Information Administration (EIA)

Oklahoma Refinery Vacuum Distillation Downstream Charge Capacity as of January 1 (Barrels per Stream Day)

420

Georgia Refinery Marketable Petroleum Coke Production Capacity ...  

U.S. Energy Information Administration (EIA)

Georgia Refinery Marketable Petroleum Coke Production Capacity as of January 1 (Barrels per Stream Day)

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Improving Microstructure of Silicon/Carbon Nanofiber Composites as A Li Battery Anode  

SciTech Connect

We report the interfacial study of a silicon/carbon nanofiber (Si/CNF) nanocomposite material as a potentially high performance anode for rechargeable lithium ion batteries. The carbon nanofiber is hollow, with a graphitic interior and turbostratic exterior. Amorphous silicon layers were uniformly coated via chemical vapor deposition on both the exterior and interior surfaces of the CNF. The resulting Si/CNF composites were tested as anodes for Li ion batteries and exhibited capacities near 800 mAh g{sup -1} for 100 cycles. After cycling, we found that more Si had fallen off from the outer wall than from the inner wall of CNF. Theoretical calculations confirmed that this is due to a higher interfacial strength at the Si/C-edge interface at the inner wall than that of the Si/C-basal interface at the outer wall. Based upon the experimental analysis and theoretical calculation, we have proposed several interfacial engineering approaches to improve the performance of the electrodes by optimizing the microstructure of this nanocomposite.

Howe, Jane Y [ORNL; Burton, David J. [Applied Sciences, Inc.; Meyer III, Harry M [ORNL; Nazri, Maryam [Applied Sciences, Inc.; Nazri, G. Abbas [General Motors Corporation-R& D; Palmer, Andrew C. [Applied Sciences, Inc.; Lake, Patrick D. [Applied Sciences, Inc.

2013-01-01T23:59:59.000Z

422

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents (OSTI)

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20T23:59:59.000Z

423

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents (OSTI)

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

424

High-Rate, High-Capacity Binder-Free Electrode  

NREL is a national laboratory of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy operated by the Alliance for Sustainable Energy, LLC

425

OpenEI - Electric Capacity  

Open Energy Info (EERE)

New Zealand Energy New Zealand Energy Outlook (2010): Electricity and Generation Capacity http://en.openei.org/datasets/node/357 The New Zealand Ministry of Economic Development publishes an annual Energy Outlook, which presents projections of New Zealand's future energy supply, demand, prices and greenhouse gas emissions. The principle aim of these projections is to inform the national energy debate. Included here are the model results for electricity and generation capacity. The spreadsheet provides an interactive tool for selecting which model results to view, and which scenarios to evaluate; full model results for each scenario are also included.

License

426

Silicon photomultiplier timing performance study  

E-Print Network (OSTI)

Many characteristics of Silicon Photomultipliers can be tuned with temperature and operation voltage. We present preliminary results of a study of the effect of these two operation parameters on the time resolution of large active area Multi-Pixel Photon Counters (MPPCs) manufactured by Hamamatsu. Measurements at -10 C, 0 C, and 10 C at different bias voltages were performed. The time resolution is best at low temperature and high over-voltage. Most significant improvements can be achieved in cases with low number of fired pixels (40 pixels) the effect of temperature and operation voltage becomes smaller. The timing performance still improves with decreasing temperature (~ factor of 2) but it hardly depends on the operation voltage. The study shows, that especially in applications where only few photons are available for detection a careful optimization of temperature and operation voltage are advisable to obtain optimum timing results with the MPPC.

Gama Ahmed; Paul Bühler; Johann Marton; Ken Suzuki

2010-06-21T23:59:59.000Z

427

Silicon concentrator solar cell research  

DOE Green Energy (OSTI)

This report describes work conducted between December 1990 and May 1992 continuing research on silicon concentrator solar cells. The objectives of the work were to improve the performance of high-efficiency cells upon p-type substrates, to investigate the ultraviolet stability of such cells, to develop concentrator cells based on n-type substrates, and to transfer technology to appropriate commercial environments. Key results include the identification of contact resistance between boron-defused areas and rear aluminum as the source of anomalously large series resistance in both p- and n-type cells. A major achievement of the present project was the successful transfer of cell technology to both Applied Solar Energy Corporation and Solarex Corporation.

Green, M.A.; Zhao, J.; Wang, A.; Dai, X.; Milne, A.; Cai, S.; Aberle, A.; Wenham, S.R. [Univ. of New South Wales, Kensington, NSW (AU). Centre for Photovoltaic Devices and Systems

1993-06-01T23:59:59.000Z

428

Analysis of system wide distortion in an integrated power system utilizing a high voltage DC bus and silicon carbide power devices  

E-Print Network (OSTI)

This research investigates the distortion on the electrical distribution system for a high voltage DC Integrated Power System (IPS). The analysis was concentrated on the power supplied to a propulsion motor driven by an ...

Fallier, William F. (William Frederick)

2007-01-01T23:59:59.000Z

429

Building Energy Software Tools Directory : CHP Capacity Optimizer  

NLE Websites -- All DOE Office Websites (Extended Search)

CHP Capacity Optimizer Back to Tool CHP Capacity Optimizer data entry screen CHP Capacity Optimizer results screen CHP Capacity Optimizer restult map...

430

Does More international transmission capacity increase competition in the Belgian electricity market?  

SciTech Connect

From a national market perspective, taking transmission capacity into account reduces current concentration measures, although they remain fairly high even after substantial capacity increases. From an international perspective, a more efficient use of current transmission capacity by coupling regional markets can increase competition. That suggests it may not be appropriate to assess market concentration using national market shares. (author)

Kuepper, Gerd; Delarue, Erik; Delvaux, Bram; Meeus, Leonardo; Bekaert, David; Willems, Bert; Proost, Stef; D'haeseleer, William; Deketelaere, Kurt; Belmans, Ronnie

2009-01-15T23:59:59.000Z

431

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector  

DOE Patents (OSTI)

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

Holland, Stephen Edward (Hercules, CA)

2000-02-15T23:59:59.000Z

432

electricity generating capacity | OpenEI  

Open Energy Info (EERE)

generating capacity generating capacity Dataset Summary Description The New Zealand Ministry of Economic Development publishes energy data including many datasets related to electricity. Included here are three electricity generating capacity datasets: annual operational electricity generation capacity by plant type (1975 - 2009); estimated generating capacity by fuel type for North Island, South Island and New Zealand (2009); and information on generating plants (plant type, name, owner, commissioned date, and capacity), as of December 2009. Source New Zealand Ministry of Economic Development Date Released Unknown Date Updated July 03rd, 2009 (5 years ago) Keywords biomass coal Electric Capacity electricity generating capacity geothermal Hydro Natural Gas wind Data application/vnd.ms-excel icon Operational Electricity Generation Capacity by Plant Type (xls, 42.5 KiB)

433

Method of preparing silicon from sodium fluosilicate  

DOE Patents (OSTI)

A process for preparing high purity silicon metal from Na.sub.2 SiF.sub.6 (sodium fluosilicate). The sodium fluosilicate is heated to decomposition temperature to form NaF, which retains most of the impurities, and gaseous SiF.sub.4. The SiF.sub.4 is then reduced by the bomb reduction method using a reductant having a low packing density.

Schmidt, Frederick A. (Ames, IA); Rehbein, David (Ames, IA); Chiotti, Premo (Ames, IA)

1984-01-01T23:59:59.000Z

434

Deposition of amorphous silicon solar cells at high rates by glow discharge of disilane. Final subcontract report, January 1985-July 1986  

DOE Green Energy (OSTI)

This report summarizes the results of recent a-Si:H thin-film photovoltaic (PV) materials research. The work reported here concerned the fabrication of a-Si:H solar cells at high deposition rates using disilane. This task required the construction of a new, dual-chamber deposition system to control the dopant profile between the heavily doped p-type layer and the undoped (intrinsic) layer in the solar cell structure. Conditions were sought that would produce high-quality films at a high deposition rate. Complete photovoltaic devices were fabricated. In disilane-deposited material, the optimum substrate temperature is much higher than in silane material, presumably because it is harder to eliminate the excess hydrogen in the former. The efficiency of the best disilane cell was about 7%, with an open-circuit voltage of 0.80 V, a short-circuit current density of 14.7 mA cm/sup -2/ and a fill factor of 0.59. The most likely area for improvement is in the voltage, where values as high as 0.9 V should be possible with careful adjustment of the cell structure.

Vanier, P.E.

1986-08-01T23:59:59.000Z

435

Implementation Challenges for Sintered Silicon Carbide Fiber ...  

Science Conference Proceedings (OSTI)

The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system ...

436

The Quest for Inexpensive Silicon Solar Cells  

To learn more about NREL's silicon solar cell research, visit the Silicon Materials and Devices Web site. Did you find what you needed? Yes No. Thank ...

437

The Effect of Technological Improvement on Capacity  

E-Print Network (OSTI)

We formulate a model of capacity expansion that is relevant to a service provider for whom the cost of capacity shortages would be considerable but difficult to quantify exactly. Due to demand uncertainty and a lead time for adding capacity, not all shortages are avoidable. In addition, technological innovations will reduce the cost of adding capacity but may not be completely predictable. Analytical expressions for the infinite horizon expansion cost and shortages are optimized numerically. Sensitivity analyses allow us to determine the impact of technological change on the optimal timing and sizes of capacity expansions to account for economies of scale, the time value of money and penalties for insufficient capacity.

Expansion For Uncertain; Dohyun Pak; Nattapol Pornsalnuwat; Sarah M. Ryan

2004-01-01T23:59:59.000Z

438

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

DOE Green Energy (OSTI)

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

439

Silicon web process development. Low Cost Solar Array Project: Large Area Silicon Test Task. Annual report, April 1978-April 1979  

DOE Green Energy (OSTI)

Silicon dendritic web is a unique mode of ribbon growth in which crystallographic and surface tension forces, rather than shaping dies, are used to control crystal form. The single crystal webs, typically 2-4 cm wide, have been made into solar cells which exhibit AMl conversion efficiencies as high as 15.5%. During crystallization, silicon webs effectively segregate metal impurities to the melt (k/sub eff/ approx. 10/sup -5/) so that the use of cheaper, less pure silicon as feedstock for crystal growth appears feasible. A research program to significantly increase web output rate and to show the feasibility for simultaneous melt replenishment and growth is described. Also, an economic analysis of the silicon web process is presented. (WHK)

Duncan, C.S.; Hopkins, R.H.; Seidensticker, R.G.; McHugh, J.P.; Hill, F.E.; Heimlich, M.E.; Driggers, J.M.

1979-01-01T23:59:59.000Z

440

Nanostructured plasmonics silicon solar cells  

Science Conference Proceedings (OSTI)

We report a plasmonics silicon solar cell design, with the possibility of lower cost and higher efficiency. The proposed solar cell consists of a radial p-n junction silicon nanopillar arrays in combination with metallic nanoparticles resolved at the ... Keywords: Antireflection coating, Optical absorption, Power conversion efficiency, Solar cells

Pushpa Raj Pudasaini, Arturo A. Ayon

2013-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Compensated amorphous silicon solar cell  

DOE Patents (OSTI)

An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

Carlson, David E. (Yardley, PA)

1980-01-01T23:59:59.000Z

442

1992 Annual Capacity Report. Revision 1  

SciTech Connect

The Standard Contract for Disposal of Spent Nuclear Fuel and/or High-Level Radioactive Waste (10 CFR Part 961) requires the Department of Energy (DOE) to issue an Annual Capacity Report (ACR) for planning purposes. This report is the fifth in the series published by DOE. In May 1993, DOE published the 1992 Acceptance Priority Ranking (APR) that established the order in which DOE will allocate projected acceptance capacity. As required by the Standard Contract, the acceptance priority ranking is based on the date the spent nuclear fuel (SNF) was permanently discharged, with the owners of the oldest SNF, on an industry-wide basis, given the highest priority. The 1992 ACR applies the projected waste acceptance rates in Table 2.1 to the 1992 APR, resulting in individual allocations for the owners and generators of the SNF. These allocations are listed in detail in the Appendix, and summarized in Table 3.1. The projected waste acceptance rates for SNF presented in Table 2.1 are nominal and assume a site for a Monitored Retrievable Storage (MRS) facility will be obtained; the facility will initiate operations in 1998; and the statutory linkages between the MRS facility and the repository set forth in the Nuclear Waste Policy Act of 1982, as amended (NWPA), will be modified. During the first ten years following projected commencement of Civilian Radioactive Waste Management System (CRWMS) operation, the total quantity of SNF that could be accepted is projected to be 8,200 metric tons of uranium (MTU). This is consistent with the storage capacity licensing conditions imposed on an MRS facility by the NWPA. The annual acceptance rates provide an approximation of the system throughput and are subject to change as the program progresses.

Not Available

1993-05-01T23:59:59.000Z

443

U.S. Refining Capacity Utilization  

Reports and Publications (EIA)

This article briefly reviews recent trends in domestic refining capacity utilization and examines in detail the differences in reported crude oil distillation capacities and utilization rates among different classes of refineries.

Tancred Lidderdale

1995-10-01T23:59:59.000Z

444

Capacity Factor Risk At Nuclear Power Plants  

E-Print Network (OSTI)

We develop a model of the dynamic structure of capacity factor risk. It incorporates the risk that the capacity factor may vary widely from year-to-year, and also the risk that the reactor may be permanently shutdown prior ...

Du, Yangbo

445

Definition: Capacity Revenue | Open Energy Information  

Open Energy Info (EERE)

through the competitive capacity market for a capacity credit.1 References SmartGrid.gov 'Description of Benefits' An LikeLike UnlikeLike You like this.Sign Up to see...

446

Empirical Study of Ramp Metering and Capacity  

E-Print Network (OSTI)

Empirical Study of Ramp Metering and Capacity Michael J.EMPIRICAL STUDY OF RAMP METERING AND CAPACITY June 7, 2002Thus, the benefits of metering inflows at this on-ramp seem

Cassidy, Michael J.; Rudjanakanoknad, Jittichai

2002-01-01T23:59:59.000Z

447

On the capacity of bosonic channels  

E-Print Network (OSTI)

The capacity of the bosonic channel with additive Gaussian noise is unknown, but there is a known lower bound that is conjectured to be the capacity. We have quantified the gap that exists between this known achievable ...

Blake, Christopher Graham

2011-01-01T23:59:59.000Z

448

Capacity expansion in contemporary telecommunication networks  

E-Print Network (OSTI)

We study three capacity expansion problems in contemporary long distance telecommunication networks. The first two problems, motivated by a major long distance provider, address capacity expansion in national hybrid long ...

Sivaraman, Raghavendran

2007-01-01T23:59:59.000Z

449

Compensated amorphous silicon solar cell  

SciTech Connect

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

1983-01-01T23:59:59.000Z

450

On Working Memory: Its organization and capacity limits  

E-Print Network (OSTI)

64 iii 6.2 Working memory capacity10 1.4 Capacity limits of workingcapacity . . . . . . . . . . . . . . . . . . . . . . . . . .

Lara, Antonio Homero

2010-01-01T23:59:59.000Z

451

Loads, capacity, and failure rate modeling  

SciTech Connect

Both failure rate and load capacity (stress-strength) interferenece methodologies are employed in the reliability analysis at nuclear facilities. Both of the above have been utilized in a heuristic failure rate model in terms of load capacity inference. Analytical solutions are used to demonstrate that infant mortality and random aging failures may be expressed implicity in terms of capacity variability, load variability, and capacity deterioration, and that mode interactions play a role in the formation of the bathtub curve for failure rates.

Lewis, E.E.; Chen, Hsin-Chieh

1994-12-31T23:59:59.000Z

452

Peak Underground Working Natural Gas Storage Capacity  

U.S. Energy Information Administration (EIA)

Peak Working Natural Gas Capacity. Data and Analysis from the Energy Information Administration (U.S. Dept. of Energy)

453

Texas Number and Capacity of Petroleum Refineries  

U.S. Energy Information Administration (EIA)

Atmospheric Crude Oil Distillation Capacity : Operable ... Idle refineries represent refineries where distillation units were completely idle but not ...

454

Colorado Number and Capacity of Petroleum Refineries  

U.S. Energy Information Administration (EIA)

Atmospheric Crude Oil Distillation Capacity : Operable ... Idle refineries represent refineries where distillation units were completely idle but not ...

455

Optimization of the Refrigerant Capacity in Multiphase ...  

Science Conference Proceedings (OSTI)

Symposium, Magnetic Materials for Energy Applications. Presentation Title, Optimization of the Refrigerant Capacity in Multiphase Magnetocaloric Materials.

456

Regional Profiles: Pipeline Capacity and Service  

U.S. Energy Information Administration (EIA)

Regional Profiles: Pipeline Capacity ... large petrochemical and electric utility industries drawn there ... accounts for large electricity load ...

457

Shannon capacity of nonlinear regenerative channels  

E-Print Network (OSTI)

We compute Shannon capacity of nonlinear channels with regenerative elements. Conditions are found under which capacity of such nonlinear channels is higher than the Shannon capacity of the classical linear additive white Gaussian noise channel. We develop a general scheme for designing the proposed channels and apply it to the particular nonlinear sine-mapping. The upper bound for regeneration efficiency is found and the asymptotic behavior of the capacity in the saturation regime is derived.

Sorokina, M A

2013-01-01T23:59:59.000Z

458

Robust Capacity Planning in Semiconductor Manufacturing  

E-Print Network (OSTI)

Oct 3, 2001 ... Abstract: We present a stochastic programming approach to capacity planning under demand uncertainty in semiconductor manufacturing.

459

Capacity of shrinking condensers in the plane  

E-Print Network (OSTI)

We show that the capacity of a class of plane condensers is comparable to the capacity of corresponding "dyadic condensers". As an application, we show that for plane condensers in that class the capacity blows up as the distance between the plates shrinks, but there can be no asymptotic estimate of the blow-up.

Arcozzi, N

2011-01-01T23:59:59.000Z

460

The Compound Capacity of Polar Codes  

E-Print Network (OSTI)

We consider the compound capacity of polar codes under successive cancellation decoding for a collection of binary-input memoryless output-symmetric channels. By deriving a sequence of upper and lower bounds, we show that in general the compound capacity under successive decoding is strictly smaller than the unrestricted compound capacity.

Hassani, S Hamed; Urbanke, Ruediger

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "high capacity silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Micromachined silicon seismic transducers  

SciTech Connect

Batch-fabricated silicon seismic transducers could revolutionize the discipline of CTBT monitoring by providing inexpensive, easily depolyable sensor arrays. Although our goal is to fabricate seismic sensors that provide the same performance level as the current state-of-the-art ``macro`` systems, if necessary one could deploy a larger number of these small sensors at closer proximity to the location being monitored in order to compensate for lower performance. We have chosen a modified pendulum design and are manufacturing prototypes in two different silicon micromachining fabrication technologies. The first set of prototypes, fabricated in our advanced surface- micromachining technology, are currently being packaged for testing in servo circuits -- we anticipate that these devices, which have masses in the 1--10 {mu}g range, will resolve sub-mG signals. Concurrently, we are developing a novel ``mold`` micromachining technology that promises to make proof masses in the 1--10 mg range possible -- our calculations indicate that devices made in this new technology will resolve down to at least sub-{mu}G signals, and may even approach to 10{sup {minus}10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

Barron, C.C.; Fleming, J.G.; Sniegowski, J.J.; Armour, D.L.; Fleming, R.P.

1995-08-01T23:59:59.000Z

462

High Q SiC microresonators  

E-Print Network (OSTI)

We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 um radius suspended microring resonator with Q of 18000 fabricated on commercially available SiC-on-silicon substrates.

Cardenas, Jaime; Phare, Christopher T; Shah, Shreyas Y; Poitras, Carl B; Lipson, Michal

2013-01-01T23:59:59.000Z

463

In situ investigation of ion-induced dewetting of a thin iron-oxide film on silicon by high resolution scanning electron microscopy  

SciTech Connect

Using our new in situ high resolution scanning electron microscope, which is integrated into the UNILAC ion beamline at the Helmholtzzentrum fuer Schwerionenforschung (GSI) in Darmstadt, Germany, we investigated the swift heavy ion induced dewetting of a thin iron oxide layer on Si. Besides heterogeneous hole nucleation at defects and spontaneous (homogeneous) hole nucleation, we could clearly identify a dewetting mechanism, which is similar to the spinodal dewetting observed for liquid films. Instead of being due to capillary waves, it is based on a stress induced surface instability. The latter results in the formation of a wavy surface with constant dominant wave-length and increasing amplitude during ion irradiation. Dewetting sets in as soon as the wave-troughs reach the film-substrate interface. Inspection of the hole radii and rim shapes indicates that removal of the material from the hole area occurs mainly by plastic deformation at the inner boundary and ion induced viscous flow in the peripheral zone due to surface tension.

Amirthapandian, S. [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart, 70569 Stuttgart (Germany); Material Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Schuchart, F.; Garmatter, D.; Bolse, W. [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart, 70569 Stuttgart (Germany)

2012-11-15T23:59:59.000Z

464

Process feasibility study in support of silicon material Task I. Final report, October 1, 1975-February 6, 1981  

DOE Green Energy (OSTI)

The Low-Cost Solar Array (LSA) Project is directed toward effective cost reduction in the production of silicon for solar cells. Results are presented for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells. Major physical, thermodynamic and transport property data are reported for the following silicon source and processing chemical materials: silane, silicon tetrachloride, trichlorosilane, dichlorosilane, silicon tetrafluoride, and silicon. The property data are reported for critical temperature, critical pressure, critical volume, vapor pressure, heat of vaporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analyses involving the preliminary process design of a plant (1000 MT/yr capacity) to produce silicon via the technology under consideration were accomplished for the following processes: UCC silane process for silicon, BCL process for silicon, conventional polysilicon process (Siemens technology), SiI/sub 4/ decomposition process, and DCS process (dichlorosilane).Major activities in chemical engineering analyses include base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provides detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process. Using detailed data from the process design package, economic analyses for a 1000 MT/yr silicon plant were accomplished. Primary results from the economic analyses included plant capital investment and product cost. Results are presented and discussed. (WHK)

Yaws, C.L.; Li, K.Y.; Hopper, J.R.; Fang, C.S.; Hansen, K.C.

1981-02-06T23:59:59.000Z

465

Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell  

Science Conference Proceedings (OSTI)

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused silicon junctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.

Geisz, J. F.; Olson, J. M.; Friedman, D. J.

2004-09-01T23:59:59.000Z

466

Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy  

Science Conference Proceedings (OSTI)

This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN-based high electron mobility transistor structures grown on 4 in. Si (111) substrates. In situ measurements of wafer curvature during growth proved to be a very powerful method to analyze the buffer layer's thickness dependent strain. The Ga/N ratio at the beginning of growth of the GaN buffer layer is the critical parameter to control the compressive strain of the entire grown structure. An engineered amount of compressive strain must be designed into the structure to perfectly compensate for the tensile strain caused by differences in the thermal expansion coefficient between the epi-layer and substrate during sample cool down from growth temperatures. A maximum film thickness of 4.2 {mu}m was achieved without the formation of any cracks and a negligible bow of the wafers below 10 {mu}m. Measurement of the as-grown wafers revealed depth profiles of the charge carrier concentration comparable to values achieved on SiC substrates and mobility values of the two dimensional electron gas in the range 1230 to 1350 cm{sup 2}/Vs at a charge carrier concentration of 6.5-7 10{sup 12}/cm{sup 2}. First results on processed wafers with 2 {mu}m thick buffer layer indicate very promising results with a resistance of the buffer, measured on 200 {mu}m long contacts with 15 {mu}m pitch, in the range of R > 10{sup 9}{Omega} at 100 V and breakdown voltages up to 550 V.

Aidam, Rolf; Diwo, Elke; Rollbuehler, Nicola; Kirste, Lutz; Benkhelifa, Fouad [Fraunhofer-Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

2012-06-01T23:59:59.000Z

467

Silicon nitride ceramic comprising samaria and ytterbia  

Science Conference Proceedings (OSTI)

This invention relates to a sintered silicon nitride ceramic comprising samaria and ytterbia for enhanced toughness.

Yeckley, Russell L. (Oakham, MA)

1996-01-01T23:59:59.000Z

468

DOE Transmission Capacity Report | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Transmission Capacity Report Transmission Capacity Report DOE Transmission Capacity Report DOE Transmission Capacity Report: Transmission lines, substations, circuit breakers, capacitors, and other equipment provide more than just a highway to deliver energy and power from generating units to distribution systems. Transmission systems both complement and substitute for generation. Transmission generally enhances reliability; lowers the cost of electricity delivered to consumers; limits the ability of generators to exercise market power; and provides flexibility to protect against uncertainties about future fuel prices, load growth, generator construction, and other factors affecting the electric system. DOE Transmission Capacity Report More Documents & Publications Report to Congress:Impacts of the Federal Energy Regulatory Commission's

469

Capacity withholding in the Electricity Pool.  

E-Print Network (OSTI)

Electricity generators can raise the price of power by withholding their plant from the market. We discuss two ways in which this could have affected prices in the England and Wales Pool. Withholding low-cost capacity which should be generating will raise energy prices but make the pattern of generation less efficient. This pattern improved significantly after privatisation. Withholding capacity that was not expected to generate would raise the Capacity Payments based on spare capacity. On a multi-year basis, these did not usually exceed “competitive ” levels, the cost of keeping stations open. The evidence for large-scale capacity withholding is weak. Keywords: JEL:

Richard Green; Richard Green

2004-01-01T23:59:59.000Z

470

Large-area silicon-film{sup {trademark}} panels and solar cells. Phase I annual technical report, July 1, 1995--December 31, 1995  

DOE Green Energy (OSTI)

AstroPower is establishing a low cost manufacturing process for Silicon-Film{trademark} solar cells and panels by taking advantage of the continuous nature of the Silicon-Film{trademark} technology. Under this effort, each step used in Silicon-Film{trademark} panel fabrication is being developed into a continuous/in-line manufacturing process. The following benefits are expected: an accelerated reduction of PV manufacturing cost for installed systems; a foundation for significantly increased production capacity; and a reduction in handling and waste streams. The process development will be based on a new 31-cm wide continuous Silicon-Film{trademark} sheet. Long-term goals include the development of a 24W, 30 cm x 60 cm Silicon-Film{trademark} solar cell and a manufacturing capability for a 384W, 4 inches x 8 inches Silicon-Film{trademark} panel for deployment in utility-scale applications.

Rand, J.A.; Barnett, A.M.; Checchi, J.C.; Culik, J.S. [AstroPower, Inc., Solar Park, Newark, DE (United States)] [and others

1996-06-01T23:59:59.000Z

471

Deposition of device quality low H content, amorphous silicon films  

DOE Patents (OSTI)

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure