National Library of Energy BETA

Sample records for high capacity silicon

  1. CSTI high capacity power

    SciTech Connect (OSTI)

    Winter, J.M.

    1994-09-01

    The SP-100 program was established in 1983 by DOD, DOE, and NASA as a joint program to develop the technology necessary for space nuclear power systems for military and civil application. During FY86 and 87, the NASA SP-100 Advanced Technology Program was devised to maintain the momentum of promising technology advancement efforts started during Phase I of SP-100 and to strengthen, in key areas, the chances for successful development and growth capability of space nuclear reactor power systems for future space applications. In FY88, the Advanced Technology Program was incorporated into NASA`s new Civil Space Technology Initiative (CSTI). The CSTI Program was established to provide the foundation for technology development in automation and robotics, information, propulsion, and power. The CSTI High Capacity Power Program builds on the technology efforts of the SP-100 program, incorporates the previous NASA SP-100 Advanced Technology project, and provides a bridge to NASA Project Pathfinder. The elements of CSTI High Capacity Power development include Conversion Systems, Thermal Management, Power Management, System Diagnostics, and Environmental Interactions. Technology advancement in all areas, including materials, is required to assure the high reliability and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall program will develop and demonstrate the technology base required to provide a wide range of modular power systems as well as allowing mission independence from solar and orbital attitude requirements. Several recent advancements in CSTI High Capacity power development will be discussed.

  2. High capacity anode materials for lithium ion batteries

    DOE Patents [OSTI]

    Lopez, Herman A.; Anguchamy, Yogesh Kumar; Deng, Haixia; Han, Yongbon; Masarapu, Charan; Venkatachalam, Subramanian; Kumar, Suject

    2015-11-19

    High capacity silicon based anode active materials are described for lithium ion batteries. These materials are shown to be effective in combination with high capacity lithium rich cathode active materials. Supplemental lithium is shown to improve the cycling performance and reduce irreversible capacity loss for at least certain silicon based active materials. In particular silicon based active materials can be formed in composites with electrically conductive coatings, such as pyrolytic carbon coatings or metal coatings, and composites can also be formed with other electrically conductive carbon components, such as carbon nanofibers and carbon nanoparticles. Additional alloys with silicon are explored.

  3. High capacity oil burner

    SciTech Connect (OSTI)

    Pedrosa, O.A. Jr.; Couto, N.C.; Fanqueiro, R.C.C.

    1983-11-01

    The present invention relates to a high capacity oil burner comprising a cylindrical atomizer completely surrounded by a protective cylindrical housing having a diameter from 2 to 3 times greater than the diameter of said atomizer; liquid fuels being injected under pressure into said atomizer and accumulating within said atomizer in a chamber for the accumulation of liquid fuels, and compressed air being injected into a chamber for the accumulation of air; cylindrical holes communicating said chamber for the accumulation of liquid fuels with the outside and cylindrical holes communicating said chamber for the accumulation of air with said cylindrical holes communicating the chamber for the accumulation of liquids with the outside so that the injection of compressed air into said liquid fuel discharge holes atomizes said fuel which is expelled to the outside through the end portions of said discharge holes which are circumferentially positioned to be burnt by a pilot flame; said protecting cylindrical housing having at its ends perforated circular rings into which water is injected under pressure to form a protecting fan-like water curtain at the rear end of the housing and a fan-like water curtain at the flame to reduce the formation of soot; the burning efficiency of said burner being superior to 30 barrels of liquid fuel per day/kg of the apparatus.

  4. Polycrystalline silicon passivated tunneling contacts for high...

    Office of Scientific and Technical Information (OSTI)

    efficiency silicon solar cells Citation Details In-Document Search Title: Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells Authors: ...

  5. High damage tolerance of electrochemically lithiated silicon

    SciTech Connect (OSTI)

    Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

    2015-09-24

    Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. In this paper, we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Finally, our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries.

  6. High damage tolerance of electrochemically lithiated silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; et al

    2015-09-24

    Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. In this paper, we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratiomore » is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Finally, our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries.« less

  7. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, D.R.; Brzezinski, M.A.

    1996-06-11

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  8. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R.; Brzezinski, Mark A.

    1996-01-01

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  9. High current capacity electrical connector

    DOE Patents [OSTI]

    Bettis, Edward S.; Watts, Harry L.

    1976-01-13

    An electrical connector is provided for coupling high current capacity electrical conductors such as copper busses or the like. The connector is arranged in a "sandwiched" configuration in which a conductor plate contacts the busses along major surfaces thereof clamped between two stainless steel backing plates. The conductor plate is provided with a plurality of contact buttons affixed therein in a spaced array such that the caps of the buttons extend above the conductor plate surface to contact the busses. When clamping bolts provided through openings in the sandwiched arrangement are tightened, Belleville springs provided under the rim of each button cap are compressed and resiliently force the caps into contact with the busses' contacting surfaces to maintain a predetermined electrical contact area provided by the button cap tops. The contact area does not change with changing thermal or mechanical stresses applied to the coupled conductors.

  10. High capacity carbon dioxide sorbent

    DOE Patents [OSTI]

    Dietz, Steven Dean; Alptekin, Gokhan; Jayaraman, Ambalavanan

    2015-09-01

    The present invention provides a sorbent for the removal of carbon dioxide from gas streams, comprising: a CO.sub.2 capacity of at least 9 weight percent when measured at 22.degree. C. and 1 atmosphere; an H.sub.2O capacity of at most 15 weight percent when measured at 25.degree. C. and 1 atmosphere; and an isosteric heat of adsorption of from 5 to 8.5 kilocalories per mole of CO.sub.2. The invention also provides a carbon sorbent in a powder, a granular or a pellet form for the removal of carbon dioxide from gas streams, comprising: a carbon content of at least 90 weight percent; a nitrogen content of at least 1 weight percent; an oxygen content of at most 3 weight percent; a BET surface area from 50 to 2600 m.sup.2/g; and a DFT micropore volume from 0.04 to 0.8 cc/g.

  11. High capacity immobilized amine sorbents

    DOE Patents [OSTI]

    Gray, McMahan L.; Champagne, Kenneth J.; Soong, Yee; Filburn, Thomas

    2007-10-30

    A method is provided for making low-cost CO.sub.2 sorbents that can be used in large-scale gas-solid processes. The improved method entails treating an amine to increase the number of secondary amine groups and impregnating the amine in a porous solid support. The method increases the CO.sub.2 capture capacity and decreases the cost of utilizing an amine-enriched solid sorbent in CO.sub.2 capture systems.

  12. Method of enhanced lithiation of doped silicon carbide via high...

    Office of Scientific and Technical Information (OSTI)

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also ...

  13. Production of high specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R.; Brzezinski, Mark A.

    1994-01-01

    A process for preparation of silicon-32 is provide and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  14. Design and Evaluation of Novel High Capacity Cathode Materials...

    Broader source: Energy.gov (indexed) [DOE]

    More Documents & Publications Design and Evaluation of High Capacity Cathodes Design and Evaluation of Novel High Capacity Cathode Materials Design and Evaluation of Novel High ...

  15. HT Combinatorial Screening of Novel Materials for High Capacity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    HT Combinatorial Screening of Novel Materials for High Capacity Hydrogen Storage HT Combinatorial Screening of Novel Materials for High Capacity Hydrogen Storage Presentation for ...

  16. Design and Evaluation of Novel High Capacity Cathode Materials...

    Broader source: Energy.gov (indexed) [DOE]

    More Documents & Publications Design and Evaluation of High Capacity Cathodes Vehicle Technologies Office Merit Review 2014: Design and Evaluation of High Capacity Cathodes Design and ...

  17. High-Rate, High-Capacity Binder-Free Electrode

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Office of Energy Efficiency and Renewable Energy operated by the Alliance for Sustainable Energy, LLC High-Rate, High-Capacity Binder-Free Electrode Patent: PCT-09-41 Chunmei Ban ...

  18. Polycrystalline silicon passivated tunneling contacts for high efficiency

    Office of Scientific and Technical Information (OSTI)

    silicon solar cells (Journal Article) | SciTech Connect Journal Article: Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells Citation Details In-Document Search Title: Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells Authors: Nemeth, Bill ; Young, David L. ; Page, Matthew R. ; LaSalvia, Vincenzo ; Johnston, Steve ; Reedy, Robert ; Stradins, Paul Publication Date: 2016-03-01 OSTI Identifier: 1247961 Report

  19. High Q silicon carbide microdisk resonator

    SciTech Connect (OSTI)

    Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X.-L.; Lin, Qiang

    2014-05-05

    We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12??10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

  20. Using SiO Anodes for High Capacity, High Rate Electrodes for...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using SiO Anodes for High Capacity, High Rate Electrodes for Lithium Ion Batteries ... areal capacities and good capacity retention for application in lithium ion batteries. ...

  1. Design and Evaluation of Novel High Capacity Cathode Materials...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Lithium Source For High Performance Li-ion Cells Design and Evaluation of Novel High Capacity Cathode Materials Lithium Source For High...

  2. The NASA CSTI High Capacity Power Project

    SciTech Connect (OSTI)

    Winter, J.; Dudenhoefer, J.; Juhasz, A.; Schwarze, G.; Patterson, R.; Ferguson, D.; Titran, R.; Schmitz, P.; Vandersande, J.

    1994-09-01

    The SP-100 Space Nuclear Power Program was established in 1983 by DOD, DOE, and NASA as a joint program to develop technology for military and civil applications. Starting in 1986, NASA has funded a technology program to maintain the momentum of promising aerospace technology advancement started during Phase I of SP-100 and to strengthen, in key areas, the changes for successful development and growth capability of space nuclear reactor power systems for a wide range of future space applications. The elements of the CSTI High Capacity Power Project include Systems Analysis, Stirling Power Conversion, Thermoelectric Power Conversion, Thermal Management, Power Management, Systems Diagnostics, Environmental Interactions, and Material/Structural Development. Technology advancement in all elements is required to provide the growth capability, high reliability and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall project with develop and demonstrate the technology base required to provide a wide range of modular power systems compatible with the SP-100 reactor which facilitates operation during lunar and planetary day/night cycles as well as allowing spacecraft operation at any attitude or distance from the sun. Significant accomplishments in all of the project elements will be presented, along with revised goals and project timelines recently developed.

  3. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C.; Rohatgi, Naresh K.

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  4. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  5. Development of High-Capacity Cathode Materials with Integrated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    & Publications Development of High-Capacity Cathode Materials with Integrated Structures Vehicle Technologies Office Merit Review 2015: Design and Evaluation of High...

  6. Designing Silicon Nanostructures for High Energy Lithium Ion...

    Broader source: Energy.gov (indexed) [DOE]

    Performance Lithium-ion Battery Anodes Vehicle Technologies Office Merit Review 2014: Wiring Up Silicon Nanostructures for High Energy Lithium-Ion Battery Anodes Vehicle ...

  7. Low Cost, High Efficiency Tandem Silicon Solar Cells and LEDs...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building Energy Efficiency Building Energy ... Return to Search Low Cost, High Efficiency Tandem Silicon Solar Cells and LEDs ... gaps will lead to efficient power conversion. ...

  8. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  9. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  10. HT Combinatorial Screening of Novel Materials for High Capacity Hydrogen

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Storage | Department of Energy HT Combinatorial Screening of Novel Materials for High Capacity Hydrogen Storage HT Combinatorial Screening of Novel Materials for High Capacity Hydrogen Storage Presentation for the high temperature combinatorial screening for high capacity hydrogen storage meeting ht_ucf_raissi.pdf (999.19 KB) More Documents & Publications DetecTape - A Localized Visual Detector for Hydrogen Leaks DetecTape - A Localized Visual Detector for Hydrogen Leaks Webinar

  11. Mesoporous Silicon Sponge as an Anti-Pulverization Structure for High-Performance Lithium-ion Battery Anodes

    SciTech Connect (OSTI)

    Li, Xiaolin; Gu, Meng; Hu, Shenyang Y.; Kennard, Rhiannon; Yan, Pengfei; Chen, Xilin; Wang, Chong M.; Sailor, Michael J.; Zhang, Jiguang; Liu, Jun

    2014-07-08

    Nanostructured silicon is a promising anode material for high performance lithium-ion batteries, yet scalable synthesis of such materials, and retaining good cycling stability in high loading electrode remain significant challenges. Here, we combine in-situ transmission electron microscopy and continuum media mechanical calculations to demonstrate that large (>20 micron) mesoporous silicon sponge (MSS) prepared by the scalable anodization method can eliminate the pulverization of the conventional bulk silicon and limit particle volume expansion at full lithiation to ~30% instead of ~300% as observed in bulk silicon particles. The MSS can deliver a capacity of ~750 mAh/g based on the total electrode weight with >80% capacity retention over 1000 cycles. The first-cycle irreversible capacity loss of pre-lithiated MSS based anode is only <5%. The insight obtained from MSS also provides guidance for the design of other materials that may experience large volume variation during operations.

  12. High-Rate, High-Capacity Binder-Free Electrode

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Office of Energy Efficiency and Renewable Energy operated by the Alliance for Sustainable Energy, LLC High-Rate, High-Capacity Binder-Free Electrode Patent: PCT-09-41 Chunmei Ban Zhuangchun Wu Anne Dillon National Renewable Energy Laboratory PCT: 09-41 Binderfree electrode 2 Outline  What is the technology  Why it is better than other technologies  How far away from market  Technical details  Market analysis National Renewable Energy Laboratory PCT: 09-41 Binderfree electrode 3

  13. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, Vimal K.; Tracey, Dennis M.; Foley, Michael R.; Paille, Norman I.; Pelletier, Paul J.; Sales, Lenny C.; Willkens, Craig A.; Yeckley, Russell L.

    1998-01-01

    A ceramic body comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa.

  14. Development of High-Capacity Cathode Materials with Integrated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Peer Evaluation PDF icon es019kang2011p.pdf More Documents & Publications Development of High-Capacity Cathode Materials with Integrated Structures Development of...

  15. Degradation and (de)lithiation processes in the high capacity...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Degradation and (de)lithiation processes in the high capacity battery material LiFeBOsubscript 3 Citation Details In-Document Search Title: Degradation and ...

  16. High Methane Storage Capacity in Aluminum Metal-Organic Frameworks...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High Methane Storage Capacity in Aluminum Metal-Organic Frameworks Previous Next List Felipe Gndara, Hiroyasu Furukawa, Seungkyu Lee, and Omar M. Yaghi, J. Am. Chem. Soc., 136,...

  17. Wireless Battery Management System for Safe High-Capacity Energy...

    Office of Scientific and Technical Information (OSTI)

    Wireless Battery Management System for Safe High-Capacity Energy Storage Citation Details ... Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 25 ...

  18. Design and Evaluation of Novel High Capacity Cathode Materials...

    Broader source: Energy.gov (indexed) [DOE]

    49thackeray2011o.pdf (1.66 MB) More Documents & Publications Cathodes Design and Evaluation of Novel High Capacity Cathode Materials Layered Cathode Materials

  19. Method and apparatus for producing high purity silicon

    DOE Patents [OSTI]

    Olson, J.M.

    1983-05-27

    A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

  20. Method and apparatus for producing high purity silicon

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO)

    1984-01-01

    A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

  1. Low cost routes to high purity silicon and derivatives thereof

    DOE Patents [OSTI]

    Laine, Richard M; Krug, David James; Marchal, Julien Claudius; Mccolm, Andrew Stewart

    2013-07-02

    The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon).

  2. Design and Evaluation of Novel High Capacity Cathode Materials...

    Broader source: Energy.gov (indexed) [DOE]

    17johnson2011p.pdf (651.34 KB) More Documents & Publications Design and Evaluation of Novel High Capacity Cathode Materials Lithium Source For High Performance Li-ion Cells ...

  3. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1998-06-02

    A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

  4. Silicon nitride ceramic having high fatigue life and high toughness

    DOE Patents [OSTI]

    Yeckley, Russell L.

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  5. Development of High-Capacity Cathode Materials with Integrated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2010 -- Washington D.C. PDF icon es019kang2010o.pdf More Documents & Publications Development of high-capacity cathode materials with integrated structures Development of...

  6. Degradation and (de)lithiation processes in the high capacity...

    Office of Scientific and Technical Information (OSTI)

    Degradation and (de)lithiation processes in the high capacity battery material LiFeBO3 Citation Details In-Document Search Title: Degradation and (de)lithiation processes in the ...

  7. Development of high-capacity cathode materials with integrated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. PDF icon esp14kang.pdf More Documents & Publications Development of High-Capacity Cathode Materials ...

  8. High capacity stabilized complex hydrides for hydrogen storage

    DOE Patents [OSTI]

    Zidan, Ragaiy; Mohtadi, Rana F; Fewox, Christopher; Sivasubramanian, Premkumar

    2014-11-11

    Complex hydrides based on Al(BH.sub.4).sub.3 are stabilized by the presence of one or more additional metal elements or organic adducts to provide high capacity hydrogen storage material.

  9. Process development for high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

    1991-01-01

    Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

  10. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1996-11-05

    A silicon nitride ceramic is disclosed comprising: (a) inclusions no greater than 25 microns in length, (b) agglomerates no greater than 20 microns in diameter, and (c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa. 4 figs.

  11. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, Vimal K.; Tracey, Dennis M.; Foley, Michael R.; Paille, Norman I.; Pelletier, Paul J.; Sales, Lenny C.; Willkens, Craig A.; Yeckley, Russell L.

    1996-01-01

    A silicon nitride ceramic comprising: a) inclusions no greater than 25 microns in length, b) agglomerates no greater than 20 microns in diameter, and c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa.

  12. Design and Evaluation of Novel High Capacity Cathode Materials | Department

    Broader source: Energy.gov (indexed) [DOE]

    of Energy 17_johnson_2011_p.pdf (651.34 KB) More Documents & Publications Design and Evaluation of Novel High Capacity Cathode Materials Lithium Source For High Performance Li-ion Cells Lithium Source For High Performance Li-ion Cells

  13. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    SciTech Connect (OSTI)

    Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

    2014-10-27

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  14. Silicon-embedded copper nanostructure network for high energy storage

    DOE Patents [OSTI]

    Yu, Tianyue

    2016-03-15

    Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

  15. High Capacity Hydrogen Storage Nanocomposite - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogen and Fuel Cell Hydrogen and Fuel Cell Energy Storage Energy Storage Advanced Materials Advanced Materials Find More Like This Return to Search High Capacity Hydrogen Storage Nanocomposite Processes to add metal hydrideds to nanocarbon structures to yield high capacity hydrogen storage materials Savannah River National Laboratory Contact SRNL About This Technology Plot of Number of hydrogen atoms per lithium atom vs the Mol ratio of C<sub>60</sub>:Li.&nbsp; An ratio of 1:6

  16. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOE Patents [OSTI]

    Yunker, Wayne H.; Christiansen, David W.

    1987-01-01

    A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  17. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOE Patents [OSTI]

    Yunker, Wayne H.; Christiansen, David W.

    1987-05-05

    A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  18. High capacity nickel battery material doped with alkali metal cations

    DOE Patents [OSTI]

    Jackovitz, John F.; Pantier, Earl A.

    1982-05-18

    A high capacity battery material is made, consisting essentially of hydrated Ni(II) hydroxide, and about 5 wt. % to about 40 wt. % of Ni(IV) hydrated oxide interlayer doped with alkali metal cations selected from potassium, sodium and lithium cations.

  19. Modelling and fabrication of high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    Rohatgi, A.; Smith, A.W.; Salami, J.

    1991-10-01

    This report covers the research conducted on modelling and development of high-efficiency silicon solar cells during the period May 1989 to August 1990. First, considerable effort was devoted toward developing a ray-tracing program for the photovoltaic community to quantify and optimize surface texturing for solar cells. Second, attempts were made to develop a hydrodynamic model for device simulation. Such a model is somewhat slower than drift-diffusion type models like PC-1D, but it can account for more physical phenomena in the device, such as hot carrier effects, temperature gradients, thermal diffusion, and lattice heat flow. In addition, Fermi-Dirac statistics have been incorporated into the model to deal with heavy doping effects more accurately. Third and final component of the research includes development of silicon cell fabrication capabilities and fabrication of high-efficiency silicon cells. 84 refs., 46 figs., 10 tabs.

  20. Porous silicon ring resonator for compact, high sensitivity biosensing applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rodriguez, Gilberto A.; Hu, Shuren; Weiss, Sharon M.

    2015-01-01

    A ring resonator is patterned on a porous silicon slab waveguide to produce a compact, high quality factor biosensor with a large internal surface area available for enhanced recognition of biological and chemical molecules. The porous nature of the ring resonator allows molecules to directly interact with the guided mode. Quality factors near 10,000 were measured for porous silicon ring resonators with a radius of 25 μm. A bulk detection sensitivity of 380 nm/RIU was measured upon exposure to salt water solutions. Specific detection of nucleic acid molecules was demonstrated with a surface detection sensitivity of 4 pm/nM.

  1. Porous silicon ring resonator for compact, high sensitivity biosensing applications

    SciTech Connect (OSTI)

    Rodriguez, Gilberto A.; Hu, Shuren; Weiss, Sharon M.

    2015-01-01

    A ring resonator is patterned on a porous silicon slab waveguide to produce a compact, high quality factor biosensor with a large internal surface area available for enhanced recognition of biological and chemical molecules. The porous nature of the ring resonator allows molecules to directly interact with the guided mode. Quality factors near 10,000 were measured for porous silicon ring resonators with a radius of 25 ?m. A bulk detection sensitivity of 380 nm/RIU was measured upon exposure to salt water solutions. Specific detection of nucleic acid molecules was demonstrated with a surface detection sensitivity of 4 pm/nM.

  2. Chemically Etched Silicon Nanowires as Anodes for Lithium-Ion Batteries

    SciTech Connect (OSTI)

    West, Hannah Elise

    2015-08-01

    This study focused on silicon as a high capacity replacement anode for Lithium-ion batteries. The challenge of silicon is that it expands ~270% upon lithium insertion which causes particles of silicon to fracture, causing the capacity to fade rapidly. To account for this expansion chemically etched silicon nanowires from the University of Maine were studied as anodes. They were built into electrochemical half-cells and cycled continuously to measure the capacity and capacity fade.

  3. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    SciTech Connect (OSTI)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  4. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    SciTech Connect (OSTI)

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  5. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet; Chen, Zhizhang; Doshi, Parag

    1996-01-01

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

  6. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect (OSTI)

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical

  7. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect (OSTI)

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The

  8. Hard carbon nanoparticles as high-capacity, high-stability anodic...

    Office of Scientific and Technical Information (OSTI)

    for Na-ion batteries Citation Details In-Document Search Title: Hard carbon nanoparticles as high-capacity, high-stability anodic materials for Na-ion batteries Hard carbon ...

  9. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOE Patents [OSTI]

    Yunker, W.H.; Christiansen, D.W.

    1983-11-25

    This patent discloses a method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  10. High Thermal Conductivity of a Hydrogenated Amorphous Silicon Film

    SciTech Connect (OSTI)

    Liu, X.; Feldman, J. L.; Cahill, D. G.; Crandall, R. S.; Bernstein, N.; Photiadis, D. M.; Mehl, M. J.; Papaconstantopoulos, D. A.

    2009-01-23

    We measured the thermal conductivity {kappa} of an 80 {micro}m thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3{omega} (80-300 K) and the time-domain thermoreflectance (300 K) methods. The {kappa} is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher {kappa} for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

  11. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOE Patents [OSTI]

    Pugar, Eloise A.; Morgan, Peter E. D.

    1990-01-01

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

  12. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOE Patents [OSTI]

    Pugar, E.A.; Morgan, P.E.D.

    1987-09-15

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics

  13. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

    1998-06-16

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

  14. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet; Doshi, Parag; Tate, John Keith; Mejia, Jose; Chen, Zhizhang

    1998-06-16

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

  15. Surface and bulk modified high capacity layered oxide cathodes with low irreversible capacity loss

    DOE Patents [OSTI]

    Manthiram, Arumugam; Wu, Yan

    2010-03-16

    The present invention includes compositions, surface and bulk modifications, and methods of making of (1-x)Li[Li.sub.1/3Mn.sub.2/3]O.sub.2.xLi[Mn.sub.0.5-yNi.sub.0.5-yCo.sub.2- y]O.sub.2 cathode materials having an O3 crystal structure with a x value between 0 and 1 and y value between 0 and 0.5, reducing the irreversible capacity loss in the first cycle by surface modification with oxides and bulk modification with cationic and anionic substitutions, and increasing the reversible capacity to close to the theoretical value of insertion/extraction of one lithium per transition metal ion (250-300 mAh/g).

  16. Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2014-09-09

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  17. Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2015-07-07

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  18. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J. )

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  19. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    SciTech Connect (OSTI)

    Katoh, Yutai; Koyanagi, Takaaki; Kiggans, Jim; Cetiner, Nesrin; McDuffee, Joel

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  20. High-G testing of MEMS mechanical non-volatile memory and silicon...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Citation Details In-Document Search Title: High-G testing of MEMS mechanical ...

  1. High-G testing of MEMS mechanical non-volatile memory and silicon...

    Office of Scientific and Technical Information (OSTI)

    High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Citation Details In-Document Search Title: High-G testing of MEMS mechanical non-volatile memory ...

  2. High Rate and High Capacity Li-Ion Electrodes for Vehicular Applications

    SciTech Connect (OSTI)

    Dillon, A. C.

    2012-01-01

    Significant advances in both energy density and rate capability for Li-ion batteries are necessary for implementation in electric vehicles. We have employed two different methods to improve the rate capability of high capacity electrodes. For example, we previously demonstrated that thin film high volume expansion MoO{sub 3} nanoparticle electrodes ({approx}2 {micro}m thick) have a stable capacity of {approx}630 mAh/g, at C/2 (charge/dicharge in 2 hours). By fabricating thicker conventional electrodes, an improved reversible capacity of {approx}1000 mAh/g is achieved, but the rate capability decreases. To achieve high-rate capability, we applied a thin Al{sub 2}O{sub 3} atomic layer deposition coating to enable the high volume expansion and prevent mechanical degradation. Also, we recently reported that a thin ALD Al{sub 2}O{sub 3} coating can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 C. Additionally, Al{sub 2}O{sub 3} ALD films with a thickness of 2 to 4 {angstrom} have been shown to allow LiCoO{sub 2} to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs. Li/Li{sup +}. Capacity fade at this high voltage is generally caused by oxidative decomposition of the electrolyte or cobalt dissolution. We have recently fabricated full cells of NG and LiCoO{sub 2} and coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. In a different approach we have employed carbon single-wall nanotubes (SWNTs) to synthesize binder-free, high-rate capability electrodes, with 95 wt.% active materials. In one case, Fe{sub 3}O{sub 4} nanorods are employed as the active storage anode material. Recently, we have also employed this method to demonstrate improved conductivity and highly improved rate capability for a LiNi{sub 0.4}Mn{sub 0.4}Co{sub 0.2}O{sub 2

  3. Theory of High Frequency Rectification by Silicon Crystals

    DOE R&D Accomplishments [OSTI]

    Bethe, H. A.

    1942-10-29

    The excellent performance of British "red dot" crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal, C. For high conversion efficiency, the product of this capacity and of the "forward" (bulk) resistance R {sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its length. The contact can therefore have a rather large area which prevents burn-out. For a wavelength of 10 cm. the computations show that the breadth of the knife edge should be less than about 10 {sup -3} cm. For a point contact the radius must be less than 1.5 x 10 {sup -3} cm. and the resulting small area is conducive to burn-out. The effect of "tapping" is probably to reduce the area of contact. (auth)

  4. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Guha, S. )

    1991-12-01

    This report describes research to improve the understanding of amorphous silicon alloys and other relevant non-semiconductor materials for use in high-efficiency, large-area multijunction modules. The research produced an average subcell initial efficiency of 8.8% over a 1-ft{sup 2} area using same-band-gap, dual-junction cells deposited over a ZnO/AlSi back reflector. An initial efficiency of 9.6% was achieved using a ZnO/Ag back reflector over smaller substrates. A sputtering machine will be built to deposit a ZnO/Ag back reflector over a 1-ft{sup 2} area so that a higher efficiency can also be obtained on larger substrates. Calculations have been performed to optimize the grid pattern, bus bars, and cell interconnects on modules. With our present state of technology, we expect a difference of about 6% between the aperture-area and active-area efficiencies of modules. Preliminary experiments show a difference of about 8%. We can now predict the performance of single-junction cells after long-term light exposure at 50{degree}C by exposing cells to short-term intense light at different temperatures. We find that single-junction cells deposited on a ZnO/Ag back reflector show the highest stabilized efficiency when the thickness of the intrinsic layers is about 2000 {angstrom}. 8 refs.

  5. Developing a High Thermal Conductivity Fuel with Silicon Carbide Additives

    SciTech Connect (OSTI)

    baney, Ronald; Tulenko, James

    2012-11-20

    The objective of this research is to increase the thermal conductivity of uranium oxide (UO{sub 2}) without significantly impacting its neutronic properties. The concept is to incorporate another high thermal conductivity material, silicon carbide (SiC), in the form of whiskers or from nanoparticles of SiC and a SiC polymeric precursor into UO{sub 2}. This is expected to form a percolation pathway lattice for conductive heat transfer out of the fuel pellet. The thermal conductivity of SiC would control the overall fuel pellet thermal conductivity. The challenge is to show the effectiveness of a low temperature sintering process, because of a UO{sub 2}-SiC reaction at 1,377°C, a temperature far below the normal sintering temperature. Researchers will study three strategies to overcome the processing difficulties associated with pore clogging and the chemical reaction of SiC and UO{sub 2} at temperatures above 1,300°C:

  6. High capacity adsorption media and method of producing

    DOE Patents [OSTI]

    Tranter, Troy J.; Mann, Nicholas R.; Todd, Terry A.; Herbst, Ronald S.

    2010-10-05

    A method of producing an adsorption medium to remove at least one constituent from a feed stream. The method comprises dissolving and/or suspending at least one metal compound in a solvent to form a metal solution, dissolving polyacrylonitrile into the metal solution to form a PAN-metal solution, and depositing the PAN-metal solution into a quenching bath to produce the adsorption medium. The at least one constituent, such as arsenic, selenium, or antimony, is removed from the feed stream by passing the feed stream through the adsorption medium. An adsorption medium having an increased metal loading and increased capacity for arresting the at least one constituent to be removed is also disclosed. The adsorption medium includes a polyacrylonitrile matrix and at least one metal hydroxide incorporated into the polyacrylonitrile matrix.

  7. High capacity adsorption media and method of producing

    DOE Patents [OSTI]

    Tranter, Troy J.; Herbst, R. Scott; Mann, Nicholas R.; Todd, Terry A.

    2008-05-06

    A method of producing an adsorption medium to remove at least one constituent from a feed stream. The method comprises dissolving at least one metal compound in a solvent to form a metal solution, dissolving polyacrylonitrile into the metal solution to form a PAN-metal solution, and depositing the PAN-metal solution into a quenching bath to produce the adsorption medium. The at least one constituent, such as arsenic, selenium, or antimony, is removed from the feed stream by passing the feed stream through the adsorption medium. An adsorption medium having an increased metal loading and increased capacity for arresting the at least one constituent to be removed is also disclosed. The adsorption medium includes a polyacrylonitrile matrix and at least one metal hydroxide incorporated into the polyacrylonitrile matrix.

  8. Dispersion engineering of high-Q silicon microresonators via thermal oxidation

    SciTech Connect (OSTI)

    Jiang, Wei C.; Zhang, Jidong; Usechak, Nicholas G.; Lin, Qiang

    2014-07-21

    We propose and demonstrate a convenient and sensitive technique for precise engineering of group-velocity dispersion in high-Q silicon microresonators. By accurately controlling the surface-oxidation thickness of silicon microdisk resonators, we are able to precisely manage the zero-dispersion wavelength, while simultaneously further improving the high optical quality of our devices, with the optical Q close to a million. The demonstrated dispersion management allows us to achieve parametric generation with precisely engineerable emission wavelengths, which shows great potential for application in integrated silicon nonlinear and quantum photonics.

  9. Development of a high capacity longwall conveyor. Final technical report

    SciTech Connect (OSTI)

    Sparks, C

    1982-05-01

    The objectives of this program were to develop, fabricate, and demonstrate a longwall conveying system capable of transporting coal at a rate of 9000 tons/day (1000 tons/hr) and capable of accommodating a surge rate of 20 tons/min. The equipment was required to have the structural durability to perform with an operating availability of 90%. A review of available literature and discussions with longwall operators identified the problem areas of conveyor design that required attention. The conveyor under this contract was designed and fabricated with special attention given to these areas, and also to be easily maintainable. The design utilized twin 300 hp drives and twin inboard 26-mm chain at 270 ft/min; predictions of capacity and reliability based on the design indicating that it would satisfy the program requirements. Conveyor components were critically tested and the complete conveyor was surface-tested, the results verifying the design specifications. In addition, an instrumentation system was developed with analysis by computer techniques to monitor the performance of the conveyor. The conveyor was installed at a selected mine site, and it was the intention to monitor its performance over the entire longwall panel. Monitoring of the conveyor performance was conducted over approximately one-third of the longwall panel, at which point further effort was suspended. However, during the monitored period, data collected from various sources showed the conveyor to have exhibited its capability of transporting coal at the desired rate, and also to have conformed to the program requirements of reliability and availability.

  10. Transparent hydrogel with enhanced water retention capacity by introducing highly hydratable salt

    SciTech Connect (OSTI)

    Bai, Yuanyuan; Xiang, Feng; Wang, Hong E-mail: suo@seas.harvard.edu; Chen, Baohong; Zhou, Jinxiong; Suo, Zhigang E-mail: suo@seas.harvard.edu

    2014-10-13

    Polyacrylamide hydrogels containing salt as electrolyte have been used as highly stretchable transparent electrodes in flexible electronics, but those hydrogels are easy to dry out due to water evaporation. Targeted, we try to enhance water retention capacity of polyacrylamide hydrogel by introducing highly hydratable salts into the hydrogel. These hydrogels show enhanced water retention capacity in different level. Specially, polyacrylamide hydrogel containing high content of lithium chloride can retain over 70% of its initial water even in environment with relative humidity of only 10% RH. The excellent water retention capacities of these hydrogels will make more applications of hydrogels become possible.

  11. Porous silicon structures with high surface area/specific pore size

    DOE Patents [OSTI]

    Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

    1999-01-01

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

  12. Porous silicon structures with high surface area/specific pore size

    DOE Patents [OSTI]

    Northrup, M.A.; Yu, C.M.; Raley, N.F.

    1999-03-16

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gases in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters. 9 figs.

  13. Hybrid Nano Carbon Fiber/Graphene Platelet-Based High-Capacity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hybrid Nano Carbon FiberGraphene Platelet-Based High-Capacity Anodes for Lithium Ion Batteries 2010 DOE EERE Vehicle Technologies Program Merit Review - Energy Storage Progress of ...

  14. Hybrid Nano Carbon Fiber/Graphene Platelet-Based High-Capacity...

    Broader source: Energy.gov (indexed) [DOE]

    Evaluation es009jang2011o.pdf (764.62 KB) More Documents & Publications Hybrid Nano Carbon FiberGraphene Platelet-Based High-Capacity Anodes for Lithium Ion Batteries Progress ...

  15. Nano-scale Composite Hetero-structures: Novel High Capacity Reversible...

    Broader source: Energy.gov (indexed) [DOE]

    0kumta.pdf (1.9 MB) More Documents & Publications Nano-scale Composite Hetero-structures: Novel High Capacity Reversible Anodes for Lithium-ion Batteries Nanoscale ...

  16. High Wind Penetration Impact on U.S. Wind Manufacturing Capacity and Critical Resources

    SciTech Connect (OSTI)

    Laxson, A.; Hand, M. M.; Blair, N.

    2006-10-01

    This study used two different models to analyze a number of alternative scenarios of annual wind power capacity expansion to better understand the impacts of high levels of wind generated electricity production on wind energy manufacturing and installation rates.

  17. Vehicle Technologies Office Merit Review 2015: Low Cost, High Capacity Non-Intercalation Chemistry Automotive Cells

    Broader source: Energy.gov [DOE]

    Presentation given by Sila Nanotechnologies at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about low cost, high capacity...

  18. A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; Wang, Fei Fred; Liang, Zhenxian; Costinett, Daniel; Blalock, Benjamin J.

    2014-04-30

    Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

  19. Medium and high energy phosphorus implants into silicon

    SciTech Connect (OSTI)

    Whalen, P.M.; Lavine, J.P.; Zheng, L.

    1996-12-31

    The present investigation explores MeV phosphorus implants into silicon through an oxide. Secondary ion mass spectrometry (SIMS) provides the experimental depth profiles, which are compared to simulations that include the crystal structure. The calculated results are noticeably shallower than the data. The experimental results do not agree with depth profiles based on published moments. The effect of the oxide thickness is studied with the aid of the simulations and the trends of the moments with oxide thickness are presented.

  20. Fabrication and analysis of high efficiency multicrystalline silicon solar cells

    SciTech Connect (OSTI)

    Rohatgi, A.; Sana, P.; Cai, L.; Doolittle, W.A.; Kamra, S.; Doshi, P.; Krygowski, T.; Crotty, G.

    1996-01-01

    A detailed investigation of quality enhancement techniques, such as plasma enhanced chemical vapor deposition (PECVD) of SiO{sub 2}/SiN coating, forming gas anneal (FGA) and Al gettering was conducted to improve the performance of cells fabricated on several promising multicrystalline silicon (mcs) materials. A large amount of hydrogen and positive charge in the PECVD SiN antireflection (AR) coating play an important role in passivating surface and bulk defects in silicon. Appropriate post-PECVD deposition anneal was found to be important in maximizing the benefit from PECVD AR coating. Low temperature anneal at 350{degree}C/20 min improves the short wavelength response due to surface passivation along with some increase in the long wavelength response due to bulk defect passivation in certain mcs materials. Post-PECVD rapid thermal anneals (RTA) in the range of 350 to 750{degree}C significantly improve the long wavelength response of certain materials such as EFG silicon. However, this comes at the expense of short wavelength response due to increased absorption in the SiN film. Electron beam induced current (EBIC) measurements revealed significant increase in the intragrain response of these cells after post-PECVD anneal. Al gettering of mcs showed a significant improvement in bulk lifetime and cell efficiency. Forming gas anneal, after phosphorus and Al diffusions, resulted in additional improvements in bulk lifetime in certain materials due to hydrogen passivation. Cells fabricated on cast mcs from Osaka Titanium Corporation (OTC) and Crystal Systems gave cell efficiencies in the range of 17 to 18{percent}. Without the appropriate gettering and passivation techniques these materials give cell efficiencies in the range of 14.5 to 15.5{percent}. {copyright} {ital 1996 American Institute of Physics.}

  1. Properties of hydrogenated amorphous silicon produced at high temperature

    SciTech Connect (OSTI)

    Crandall, R.S.; Mahan, A.H.; Nelson, B. ); Vanecek, M. ); Balberg, I. )

    1992-12-01

    A comprehensive study of hydrogenated amorphous silicon ([ital a]-Si:H) deposited by hot wire and conventional glow discharge suggests that temperatures above the so called optimum 250 [degree]C substrate temperature can produce device-quality films. These films show enhanced transport properties and improved structural order. In addition we show that hot wire material can be produced with just as many hydrogen atoms as are needed to passivate most of the dangling bonds present in unhydrogenated [ital a]-Si:H.

  2. High-efficiency solar cells using HEM silicon

    SciTech Connect (OSTI)

    Khattak, C.P.; Schmid, F.; Schubert, W.K.

    1994-12-31

    Developments in Heat Exchanger Method (HEM) technology for production of multicrystalline silicon ingot production have led to growth of larger ingots (55 cm square cross section) with lower costs and reliability in production. A single reusable crucible has been used to produce 18 multicrystalline 33 cm square cross section 40 kg ingots, and capability to produce 44 cm ingots has been demonstrated. Large area solar cells of 16.3% (42 cm{sup 2}) and 15.3% (100 cm{sup 2}) efficiency have been produced without optimization of the material production and the solar cell processing.

  3. High energy bursts from a solid state laser operated in the heat capacity limited regime

    DOE Patents [OSTI]

    Albrecht, Georg; George, E. Victor; Krupke, William F.; Sooy, Walter; Sutton, Steven B.

    1996-01-01

    High energy bursts are produced from a solid state laser operated in a heat capacity limited regime. Instead of cooling the laser, the active medium is thermally well isolated. As a result, the active medium will heat up until it reaches some maximum acceptable temperature. The waste heat is stored in the active medium itself. Therefore, the amount of energy the laser can put out during operation is proportional to its mass, the heat capacity of the active medium, and the temperature difference over which it is being operated. The high energy burst capacity of a heat capacity operated solid state laser, together with the absence of a heavy, power consuming steady state cooling system for the active medium, will make a variety of applications possible. Alternately, cooling takes place during a separate sequence when the laser is not operating. Industrial applications include new material working processes.

  4. High energy bursts from a solid state laser operated in the heat capacity limited regime

    DOE Patents [OSTI]

    Albrecht, G.; George, E.V.; Krupke, W.F.; Sooy, W.; Sutton, S.B.

    1996-06-11

    High energy bursts are produced from a solid state laser operated in a heat capacity limited regime. Instead of cooling the laser, the active medium is thermally well isolated. As a result, the active medium will heat up until it reaches some maximum acceptable temperature. The waste heat is stored in the active medium itself. Therefore, the amount of energy the laser can put out during operation is proportional to its mass, the heat capacity of the active medium, and the temperature difference over which it is being operated. The high energy burst capacity of a heat capacity operated solid state laser, together with the absence of a heavy, power consuming steady state cooling system for the active medium, will make a variety of applications possible. Alternately, cooling takes place during a separate sequence when the laser is not operating. Industrial applications include new material working processes. 5 figs.

  5. Highly efficient terahertz wave modulators by photo-excitation of organics/silicon bilayers

    SciTech Connect (OSTI)

    Yoo, Hyung Keun; Kang, Chul; Hwang, In-Wook; Yoon, Youngwoon; Lee, Kiejin; Kee, Chul-Sik; Lee, Joong Wook

    2014-07-07

    Using hybrid bilayer systems comprising a molecular organic semiconductor and silicon, we achieve optically controllable active terahertz (THz) modulators that exhibit extremely high modulation efficiencies. A modulation efficiency of 98% is achieved from thermally annealed C{sub 60}/silicon bilayers, due to the rapid photo-induced electron transfer from the excited states of the silicon onto the C{sub 60} layer. Furthermore, we demonstrate the broadband modulation of THz waves. The cut-off condition of the system that is determined by the formation of efficient charge separation by the photo-excitation is highly variable, changing the system from insulating to metallic. The phenomenon enables an extremely high modulation bandwidth and rates of electromagnetic waves of interest. The realization of near-perfect modulation efficiency in THz frequencies opens up the possibilities of utilizing active modulators for THz spectroscopy and communications.

  6. Delaminations of thin layers by high dose hydrogen ion implantation in silicon. Formation of thin silicon on insulator silicon layers

    SciTech Connect (OSTI)

    Hara, Tohru; Onda, Takayuki; Kakizaki, Yasuo; Oshima, Sotaro; Kitamura, Taira; Kajiyama, Kenji; Yoneda, Tomoaki; Sekine, Kohei; Inoue, Morio

    1996-08-01

    The delamination of a thin layer from a Si wafer by high dose H{sup +} implantation has been studied. This process is applicable to the manufacture of Si on insulator wafers. Hydrogen ions are implanted into (100) p-Si through a 100 nm thick oxide layer at 100 keV with doses of 1.0 {times} 10{sup 16} and 1.0 {times} 10{sup 17} ion/cm{sup 2}. The implanted layer is measured by 1.5 MeV He{sup +} Rutherford backscattering spectrometry aligned spectra and by cross-sectional transmission electron microscopy after annealing. With annealing at 600 C, delamination of the Si layer, which occurred parallel to the surface, could be observed clearly at a depth of 0.85 {micro}m for a dose of 1.0 {times} 10{sup 17} ion/cm{sup 2}. The gap of the split Si layer is 20--30 nm wide. The roughness of the split layer surface is 7.5 nm. Point defects at the split layer surface decreased with annealing at high temperatures.

  7. High surface area silicon carbide-coated carbon aerogel

    DOE Patents [OSTI]

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  8. Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

    2000-05-01

    The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

  9. Vehicle Technologies Office Merit Review 2016: Development of Silicon-Based High Capacity Anodes

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by Pacific Northwest National Laboratory (PNNL) at the 2016 DOE Vehicle Technologies Office and Hydrogen and Fuel Cells Program Annual Merit Review and Peer Evaluation Meeting...

  10. Vehicle Technologies Office Merit Review 2014: Development of Silicon-based High Capacity Anodes

    Broader source: Energy.gov [DOE]

    Presentation given by Pacific Northwest National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about the...

  11. Alkali slurry ozonation to produce a high capacity nickel battery material

    DOE Patents [OSTI]

    Jackovitz, John F.; Pantier, Earl A.

    1984-11-06

    A high capacity battery material is made, consisting essentially of hydrated Ni(II) hydroxide, and about 5 wt. % to about 40 wt. % of Ni(IV) hydrated oxide interlayer doped with alkali metal cations selected from potassium, sodium and lithium cations.

  12. High temperature Hexoloy{trademark} SX silicon carbide. Final report

    SciTech Connect (OSTI)

    Srinivasan, G.V.; Lau, S.K.; Storm, R.S.

    1994-09-01

    HEXOLOY{reg_sign} SX-SiC, fabricated with Y and Al containing compounds as sintering aids, has been shown to possess significantly improved strength and toughness over HEXOLOY{reg_sign}SA-SiC. This study was undertaken to establish and benchmark the complete mechanical property database of a first generation material, followed by a process optimization task to further improve the properties. Mechanical characterization on the first generation material indicated that silicon-rich pools, presumably formed as a reaction product during sintering, controlled the strength from room temperature to 1,232 C. At 1,370 C in air, the material was failing due to a glass-phase formation at the surface. This glass-phase formation was attributed to the reaction of yttrium aluminates, which exist as a second phase in the material, with the ambient. This process was determined to be a time-dependent one that leads to slow crack growth. Fatigue experiments clearly indicated that the slow crack growth driven by the reaction occurred only at temperatures >1,300 C, above the melting point of the glass phase. Process optimization tasks conducted included the selection of the best SiC powder source, studies on mixing/milling conditions for SiC powder with the sintering aids, and a designed experiment involving a range of sintering and post-treatment conditions. The optimization study conducted on the densification variables indicated that lower sintering temperatures and higher post-treatment pressures reduce the Si-rich pool formation, thereby improving the room-temperature strength. In addition, it was also determined that furnacing configuration and atmosphere were critical in controlling the Si-rich formation.

  13. Method of making highly porous, stable aluminum oxides doped with silicon

    DOE Patents [OSTI]

    Khosravi-Mardkhe, Maryam; Woodfield, Brian F.; Bartholomew, Calvin H.; Huang, Baiyu

    2016-03-22

    The present invention relates to a method for making high surface area and large pore volume thermally stable silica-doped alumina (aluminum oxide) catalyst support and ceramic materials. The ability of the silica-alumina to withstand high temperatures in presence or absence of water and prevent sintering allows it to maintain good activity over a long period of time in catalytic reactions. The method of preparing such materials includes adding organic silicon reagents to an organic aluminum salt such as an alkoxide in a controlled quantity as a doping agent in a solid state, solvent deficient reaction followed by calcination. Alternatively, the organic silicon compound may be added after calcination of the alumina, followed by another calcination step. This method is inexpensive and simple. The alumina catalyst support material prepared by the subject method maintains high pore volumes, pore diameters and surface areas at very high temperatures and in the presence of steam.

  14. Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries

    SciTech Connect (OSTI)

    Byrd, Ian; Chen, Hao; Webber, Theron; Li, Jianlin; Wu, Ji

    2015-10-23

    We report the formation of novel asymmetric membrane electrode containing micron-size (~5 μm) germanium powders through a self-assembly phase inversion method for high capacity lithium ion battery anode. 850 mA h g-1 capacity (70%) can be retained at a current density of 600 mA g-1 after 100 cycles with excellent rate performance. Such a high retention rate has rarely been seen for pristine micron-size germanium anodes. Moreover, scanning electron microscope studies reveal that germanium powders are uniformly embedded in a networking porous structure consisting of both nanopores and macropores. It is believed that such a unique porous structure can efficiently accommodate the ~260% volume change during germanium alloying and de-alloying process, resulting in an enhanced cycling performance. Finally, these porous membrane electrodes can be manufactured in large scale using a roll-to-roll processing method.

  15. Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Byrd, Ian; Chen, Hao; Webber, Theron; Li, Jianlin; Wu, Ji

    2015-10-23

    We report the formation of novel asymmetric membrane electrode containing micron-size (~5 μm) germanium powders through a self-assembly phase inversion method for high capacity lithium ion battery anode. 850 mA h g-1 capacity (70%) can be retained at a current density of 600 mA g-1 after 100 cycles with excellent rate performance. Such a high retention rate has rarely been seen for pristine micron-size germanium anodes. Moreover, scanning electron microscope studies reveal that germanium powders are uniformly embedded in a networking porous structure consisting of both nanopores and macropores. It is believed that such a unique porous structure can efficientlymore » accommodate the ~260% volume change during germanium alloying and de-alloying process, resulting in an enhanced cycling performance. Finally, these porous membrane electrodes can be manufactured in large scale using a roll-to-roll processing method.« less

  16. Carborane-Based Metal-Organic Framework with High Methane and Hydrogen Storage Capacities

    SciTech Connect (OSTI)

    Kennedy, RD; Krungleviciute, V; Clingerman, DJ; Mondloch, JE; Peng, Y; Wilmer, CE; Sarjeant, AA; Snurr, RQ; Hupp, JT; Yildirim, T; Farha, OK; Mirkin, CA

    2013-09-10

    A Cu-carborane-based metal organic framework (MOF), NU-135, which contains a quasi-spherical para-carborane moiety, has been synthesized and characterized. NU-135 exhibits a pore volume of 1.02 cm(3)/g and a gravimetric BET surface area of ca. 2600 m(2)/g, and thus represents the first highly porous carborane-based MOF. As a consequence of the, unique geometry of the carborane unit, NU-135 has a very high volumetric BET surface area of ca. 1900 m(2)/cm(3). CH4, CO2, and H-2 adsorption isotherms were measured over a broad range of pressures and temperatures and are in good agreement with computational predictions. The methane storage capacity of NU-135 at 35 bar and 298 K is ca. 187 v(STP)/v. At 298 K, the pressure required to achieve a methane storage density comparable to that of a compressed natural gas (CNG) tank pressurized to 212 bar, which is a typical storage pressure, is only 65 bar. The methane working capacity (5-65 bar) is 170 v(STP)/v. The volumetric hydrogen storage capacity at 55 bar and 77 K is 49 g/L. These properties are comparable to those of current record holders in the area of methane and hydrogen storage. This initial example lays the groundwork for carborane-based materials with high surface areas.

  17. New High Capacity Getter for Vacuum-Insulated Mobile Liquid Hydrogen Storage Systems

    SciTech Connect (OSTI)

    H. Londer; G. R. Myneni; P. Adderley; G. Bartlok; J. Setina; W. Knapp; D. Schleussner

    2006-05-01

    Current ''Non evaporable getters'' (NEGs), based on the principle of metallic surface sorption of gas molecules, are important tools for the improving the performance of many vacuum systems. High porosity alloys or powder mixtures of Zr, Ti, Al, V, Fe and other metals are the base materials for this type of getters. The continuous development of vacuum technologies has created new challenges for the field of getter materials. The main sorption parameters of the current NEGs, namely, pumping speed and sorption capacity, have reached certain upper limits. Chemically active metals are the basis of a new generation of NEGs. The introduction of these new materials with high sorption capacity at room temperature is a long-awaited development. These new materials enable the new generation of NEGs to reach faster pumping speeds, significantly higher sticking rates and sorption capacities up to 104 times higher during their lifetimes. Our development efforts focus on producing these chemically active metals with controlled insulation or protection. The main structural forms of our new getter materials are spherical powders, granules and porous multi-layers. The full pumping performance can take place at room temperature with activation temperatures ranging from room temperature to 650 C. In one of our first pilot projects, our proprietary getter solution was successfully introduced as a getter pump in a double-wall mobile LH2 tank system. Our getters were shown to have very high sorption capacity of all relevant residual gases, including H2. This new concept opens the opportunity for significant vacuum improvements, especially in the field of H2 pumping which is an important task in many different vacuum applications.

  18. Method for producing evaporation inhibiting coating for protection of silicon--germanium and silicon--molybdenum alloys at high temperatures in vacuum

    DOE Patents [OSTI]

    Chao, P.J.

    1974-01-01

    A method is given for protecting Si--Ge and Si-- Mo alloys for use in thermocouples. The alloys are coated with silicon to inhibit the evaporation of the alloys at high tempenatures in a vacuum. Specific means and methods are provided. (5 fig) (Official Gazette)

  19. Paradoxical roles of hydrogen in electrochemical performance of graphene: High rate capacity and atomistic origins

    SciTech Connect (OSTI)

    Ye, Jianchao C.; Ong, Mitchell T.; Heo, Tae Wook; Campbell, Patrick G.; Worsley, Marcus A.; Liu, Yuanyue Y.; Charnvanichborikarn, Supakit; Matthews, Manyalibo J.; Bagge-Hansen, Michael; Lee, Jonathan R. I.; Wood, Brandon C.; Wang, Y. Morris; Shin, Swanee J.

    2015-11-05

    Atomic hydrogen exists ubiquitously in graphene materials made by chemical methods. Yet determining the effect of hydrogen on the electrochemical performance of graphene remains a significant challenge. Here we report the experimental observations of high rate capacity in hydrogen-treated 3-dimensional (3D) graphene nanofoam electrodes for lithium ion batteries. Structural and electronic characterization suggests that defect sites and hydrogen play synergistic roles in disrupting sp2 graphene to facilitate fast lithium transport and reversible surface binding, as evidenced by the fast charge-transfer kinetics and increased capacitive contribution in hydrogen-treated 3D graphene. In concert with experiments, multiscale calculations reveal that defect complexes in graphene are prerequisite for low-temperature hydrogenation, and that the hydrogenation of defective or functionalized sites at strained domain boundaries plays a beneficial role in improving rate capacity by opening gaps to facilitate easier Li penetration. Additional reversible capacity is provided by enhanced lithium binding near hydrogen-terminated edge sites. Furthermore, these findings provide qualitative insights in helping the design of graphene-based materials for high-power electrodes.

  20. Paradoxical roles of hydrogen in electrochemical performance of graphene: High rate capacity and atomistic origins

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ye, Jianchao C.; Ong, Mitchell T.; Heo, Tae Wook; Campbell, Patrick G.; Worsley, Marcus A.; Liu, Yuanyue Y.; Charnvanichborikarn, Supakit; Matthews, Manyalibo J.; Bagge-Hansen, Michael; Lee, Jonathan R. I.; et al

    2015-11-05

    Atomic hydrogen exists ubiquitously in graphene materials made by chemical methods. Yet determining the effect of hydrogen on the electrochemical performance of graphene remains a significant challenge. Here we report the experimental observations of high rate capacity in hydrogen-treated 3-dimensional (3D) graphene nanofoam electrodes for lithium ion batteries. Structural and electronic characterization suggests that defect sites and hydrogen play synergistic roles in disrupting sp2 graphene to facilitate fast lithium transport and reversible surface binding, as evidenced by the fast charge-transfer kinetics and increased capacitive contribution in hydrogen-treated 3D graphene. In concert with experiments, multiscale calculations reveal that defect complexes inmore » graphene are prerequisite for low-temperature hydrogenation, and that the hydrogenation of defective or functionalized sites at strained domain boundaries plays a beneficial role in improving rate capacity by opening gaps to facilitate easier Li penetration. Additional reversible capacity is provided by enhanced lithium binding near hydrogen-terminated edge sites. Furthermore, these findings provide qualitative insights in helping the design of graphene-based materials for high-power electrodes.« less

  1. Graphdiyne as a high-capacity lithium ion battery anode material

    SciTech Connect (OSTI)

    Jang, Byungryul; Koo, Jahyun; Park, Minwoo; Kwon, Yongkyung; Lee, Hoonkyung; Lee, Hosik; Nam, Jaewook

    2013-12-23

    Using the first-principles calculations, we explored the feasibility of using graphdiyne, a 2D layer of sp and sp{sup 2} hybrid carbon networks, as lithium ion battery anodes. We found that the composite of the Li-intercalated multilayer ?-graphdiyne was C{sub 6}Li{sub 7.31} and that the calculated voltage was suitable for the anode. The practical specific/volumetric capacities can reach up to 2719?mAh?g{sup ?1}/2032?mAh?cm{sup ?3}, much greater than the values of ?372?mAh?g{sup ?1}/?818?mAh?cm{sup ?3}, ?1117?mAh?g{sup ?1}/?1589?mAh?cm{sup ?3}, and ?744?mAh?g{sup ?1} for graphite, graphynes, and ?-graphdiyne, respectively. Our calculations suggest that multilayer ?-graphdiyne can serve as a promising high-capacity lithium ion battery anode.

  2. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect (OSTI)

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  3. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    SciTech Connect (OSTI)

    Yan, Wensheng Gu, Min; Tao, Zhikuo; Ong, Thiam Min Brian

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  4. Vehicle Technologies Office Merit Review 2015: High-Voltage, High-Capacity Polyanion Cathodes

    Broader source: Energy.gov [DOE]

    Presentation given by U of Texas at Austin at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high-voltage, high...

  5. Silicon-Polymer Encapsulation of High-Level Calcine Waste for Transportation or Disposal

    SciTech Connect (OSTI)

    G. G. Loomis; C. M. Miller; J. A. Giansiracusa; R. Kimmel; S. V. Prewett

    2000-01-01

    This report presents the results of an experimental study investigating the potential uses for silicon-polymer encapsulation of High Level Calcine Waste currently stored within the Idaho Nuclear Technology and Engineering Center (INTEC) at the Idaho National Engineering and Environmental Laboratory (INEEL). The study investigated two different applications of silicon polymer encapsulation. One application uses silicon polymer to produce a waste form suitable for disposal at a High Level Radioactive Waste Disposal Facility directly, and the other application encapsulates the calcine material for transportation to an offsite melter for further processing. A simulated waste material from INTEC, called pilot scale calcine, which contained hazardous materials but no radioactive isotopes was used for the study, which was performed at the University of Akron under special arrangement with Orbit Technologies, the originators of the silicon polymer process called Polymer Encapsulation Technology (PET). This document first discusses the PET process, followed by a presentation of past studies involving PET applications to waste problems. Next, the results of an experimental study are presented on encapsulation of the INTEC calcine waste as it applies to transportation or disposal of calcine waste. Results relating to long-term disposal include: (1) a characterization of the pilot calcine waste; (2) Toxicity Characteristic Leaching Procedure (TCLP) testing of an optimum mixture of pilot calcine, polysiloxane and special additives; and, (3) Material Characterization Center testing MCC-1P evaluation of the optimum waste form. Results relating to transportation of the calcine material for a mixture of maximum waste loading include: compressive strength testing, 10-m drop test, melt testing, and a Department of Transportation (DOT) oxidizer test.

  6. Dominant factors of the laser gettering of silicon wafers

    SciTech Connect (OSTI)

    Bokhan, Yu. I. E-mail: yuibokhan@gmail.com; Kamenkov, V. S.; Tolochko, N. K.

    2015-02-15

    The laser gettering of silicon wafers is experimentally investigated. The typical gettering parameters are considered. The surfaces of laser-treated silicon wafers are investigated by microscopy. When studying the effect of laser radiation on silicon wafers during gettering, a group of factors determining the conditions of interaction between the laser beam and silicon-wafer surface and affecting the final result of treatment are selected. The main factors determining the gettering efficiency are revealed. Limitations on the desired value of the getter-layer capacity on surfaces with insufficiently high cleanness (for example, ground or matte) are established.

  7. Development and Testing of a High Capacity Plasma Chemical Reactor in the Ukraine

    SciTech Connect (OSTI)

    Reilly, Raymond W.

    2012-07-30

    This project, Development and Testing of a High Capacity Plasma Chemical Reactor in the Ukraine was established at the Kharkiv Institute of Physics and Technology (KIPT). The associated CRADA was established with Campbell Applied Physics (CAP) located in El Dorado Hills, California. This project extends an earlier project involving both CAP and KIPT conducted under a separate CRADA. The initial project developed the basic Plasma Chemical Reactor (PCR) for generation of ozone gas. This project built upon the technology developed in the first project, greatly enhancing the output of the PCR while also improving reliability and system control.

  8. Programmatic status of NASA`s CSTI high capacity power Stirling Space Power Converter Program

    SciTech Connect (OSTI)

    Dudenhoefer, J.E.

    1994-09-01

    An overview is presented of the NASA Lewis Research Center Free-Piston Stirling Space Power Converter Technology Development Program. This work is being conducted under NASA`s Civil Space Technology Initiative (CSTI). The goal of the CSTI High Capacity Power element is to develop the technology base needed to meet the long duration, high capacity power requirements for future NASA space initiatives. Efforts are focused upon increasing system thermal and electric energy conversion efficiency at least fivefold over current SP-100 technology, and on achieving systems that are compatible with space nuclear reactors. This paper will discuss the status of test activities with the Space Power Research Engine (SPRE). Design deficiencies are gradually being corrected and the power converter is now outputting 11.5 kWe at a temperature ratio of 2 (design output is 12.5 kWe). Detail designs have been completed for the 1050 K Component Test Power Converter (CTPC). The success of these and future designs is dependent upon supporting research and technology efforts including heat pipes, gas bearings, superalloy joining technologies and high efficiency alternators. This paper also provides an update of progress in these technologies.

  9. Defect Engineering, Cell Processing, and Modeling for High-Performance, Low-Cost Crystalline Silicon Photovoltaics

    SciTech Connect (OSTI)

    Buonassisi, Tonio

    2013-02-26

    The objective of this project is to close the efficiency gap between industrial multicrystalline silicon (mc-Si) and monocrystalline silicon solar cells, while preserving the economic advantage of low-cost, high-volume substrates inherent to mc-Si. Over the course of this project, we made significant progress toward this goal, as evidenced by the evolution in solar-cell efficiencies. While most of the benefits of university projects are diffuse in nature, several unique contributions can be traced to this project, including the development of novel characterization methods, defect-simulation tools, and novel solar-cell processing approaches mitigate the effects of iron impurities ("Impurities to Efficiency" simulator) and dislocations. In collaboration with our industrial partners, this project contributed to the development of cell processing recipes, specialty materials, and equipment that increased cell efficiencies overall (not just multicrystalline silicon). Additionally, several students and postdocs who were either partially or fully engaged in this project (as evidenced by the publication record) are currently in the PV industry, with others to follow.

  10. Etching high aspect ratio (110) silicon grooves in CsOH

    SciTech Connect (OSTI)

    Yao, S.; Hesketh, P.J.; Macrander, A.T.

    1995-02-01

    In a previous study the authors developed a fabrication process for a single-crystal silicon X-ray analyzer for use at the Advanced Photon Source, a 6 GeV synchrotron accelerator ring under construction at Argonne National Laboratories. The bent silicon crystal will be used as an analyzer to collect and focus a monochromatic beam of X-rays by Bragg reflection with an energy resolution better than 10 meV for the (hhh) planes (H>6) for diffraction near backscattering. The cross-sectional geometry produced by anisotropic etching high aspect ratio (height/width = 115) silicon grooves with CSOH was studied as a function of the solution concentration. At 50 weight percent (w/o) CSOH straight sidewalls are produced, but at 15 and 25 w/o re-entrant tapered profiles are produced. The etch rates are increased in the groove by 25--100% indicating diffusion effects. The etch rate of the surface was in agreement with previous studies of CSOH etching, but unable to predict the dimensional changes in the grooves.

  11. An Insect Herbivore Microbiome with High Plant Biomass-Degrading Capacity

    SciTech Connect (OSTI)

    Suen, Garret; Barry, Kerrie; Goodwin, Lynne; Scott, Jarrod; Aylward, Frank; Adams, Sandra; Pinto-Tomas, Adrian; Foster, Clifton; Pauly, Markus; Weimer, Paul; Bouffard, Pascal; Li, Lewyn; Osterberger, Jolene; Harkins, Timothy; Slater, Steven; Donohue, Timothy; Currie, Cameron; Tringe, Susannah G.

    2010-09-23

    Herbivores can gain indirect access to recalcitrant carbon present in plant cell walls through symbiotic associations with lignocellulolytic microbes. A paradigmatic example is the leaf-cutter ant (Tribe: Attini), which uses fresh leaves to cultivate a fungus for food in specialized gardens. Using a combination of sugar composition analyses, metagenomics, and whole-genome sequencing, we reveal that the fungus garden microbiome of leaf-cutter ants is composed of a diverse community of bacteria with high plant biomass-degrading capacity. Comparison of this microbiome?s predicted carbohydrate-degrading enzyme profile with other metagenomes shows closest similarity to the bovine rumen, indicating evolutionary convergence of plant biomass degrading potential between two important herbivorous animals. Genomic and physiological characterization of two dominant bacteria in the fungus garden microbiome provides evidence of their capacity to degrade cellulose. Given the recent interest in cellulosic biofuels, understanding how large-scale and rapid plant biomass degradation occurs in a highly evolved insect herbivore is of particular relevance for bioenergy.

  12. Silicon sheet with molecular beam epitaxy for high efficiency solar cells. Final technical report, March 22, 1982-April 30, 1984

    SciTech Connect (OSTI)

    Not Available

    1984-01-01

    A two-year program has been carried out for the Jet Propulsion Laboratory in which the UCLA silicon MBE facility has been used to attempt to grow silicon solar cells of high efficiency. MBE ofers the potential of growing complex and arbitrary doping profiles with 10 A depth resolution. It is the only technique taht can readily grow built-in front and back surface fields of any desired depth and value in silicon solar cells, or the more complicated profiles needed for a double junction cascade cell, all in silicon, connected in series by a tunnel junction. Although the dopant control required for such structures has been demonstrated in silicon by UCLA, crystal quality at the p-n junctions is still too poor to allow the other advantages to be exploited. Results from other laboratories indicate that this problem will soon be overcome. A computer analysis of the double cascade all in silicon shows that efficiencies can be raised over that of any single silicon cell by 1 or 2%, and that open circuit voltage of almost twice that of a single cell should be possible.

  13. High performance continuous wave 1.3 μm quantum dot lasers on silicon

    SciTech Connect (OSTI)

    Liu, Alan Y. Norman, Justin; Zhang, Chong; Snyder, Andrew; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy W. K.; Gossard, Arthur C.; Bowers, John E.

    2014-01-27

    We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of the active region improves T{sub 0} to the range of 100–200 K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.

  14. High efficiency multijunction amorphous silicon alloy-based solar cells and modules

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.; Banerjeee, A.; Glatfelter, T.; Hoffman, K.; Xu, X. )

    1994-06-30

    We have achieved initial efficiency of 11.4% as confirmed by National Renewable Energy Laboratory (NREL) on a multijunction amorphous silicon alloy photovoltaic module of one-square-foot-area. [bold This] [bold is] [bold the] [bold highest] [bold initial] [bold efficiency] [bold confirmed] [bold by] [bold NREL] [bold for] [bold any] [bold thin] [bold film] [bold photovoltaic] [bold module]. After light soaking for 1000 hours at 50 [degree]C under one-sun illumination, a module with initial efficiency of 11.1% shows a stabilized efficiency of 9.5%. Key factors that led to this high performance are discussed.

  15. High-Efficiency Volume Reflection of an Ultrarelativistic Proton Beam with a Bent Silicon Crystal

    SciTech Connect (OSTI)

    Scandale, Walter; Still, Dean A.; Baricordi, Stefano; Dalpiaz, Pietro; Fiorini, Massimiliano; Guidi, Vincenzo; Martinelli, Giuliano; Mazzolari, Andrea; Milan, Emiliano; Ambrosi, Giovanni; Azzarello, Philipp; Battiston, Roberto; Bertucci, Bruna; Burger, William J.; Ionica, Maria; Zuccon, Paolo; Cavoto, Gianluca; Santacesaria, Roberta; Valente, Paolo; Vallazza, Erik

    2007-04-13

    The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with bent silicon crystals in the external beam H8 of the CERN Super Proton Synchrotron. Such a process was observed for a wide interval of crystal orientations relative to the beam axis, and its efficiency exceeds 95%, thereby surpassing any previously observed value. These observations suggest new perspectives for the manipulation of high-energy beams, e.g., for collimation and extraction in new-generation hadron colliders, such as the CERN Large Hadron Collider.

  16. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  17. Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Young, David L.; Nemeth, William; Grover, Sachit; Norman, Andrew; Yuan, Hao-Chih; Lee, Benjamin G.; LaSalvia, Vincenzo; Stradins, Paul

    2014-01-01

    We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0,contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0,contact) and the specificmore » contact resistivity (ρcontact) using a TLM pattern. The best ITO/SiO2 passivated contact in this study has J0,contact = 92.5 fA/cm2 and ρcontact = 11.5 mOhm-cm2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0,contact, ρcontact) values. The ITO/SiO2 contacts are found to have a higher J0,contact, but a similar ρcontact compared to the best reported passivated contacts.« less

  18. Silicon Ink for High-Efficiency Solar Cells Captures a Share of the Market (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-08-01

    Fact sheet on 2011 R&D 100 Award winner Silicon Ink. Liquid silicon has arrived, and with it comes a power boost for solar cells and dramatic cost savings for cell manufacturers.

  19. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    SciTech Connect (OSTI)

    Maruska, P.

    1996-09-01

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  20. Standard for the qualification of high capacity fossil fuel fired plant operators

    SciTech Connect (OSTI)

    Axtman, W.

    1996-12-31

    The American Society of Mechanical Engineers, at the request of the U.S. Environmental Protection Agency (EPA) and, in recognition of the needs and benefits associated with standard qualifications of operators of high capacity fossil fuel fired plants, established the Qualifications of High Capacity Fossil Fuel Fired Operator (QFO) Committee in 1994. The purpose of the QFO Committee is to develop and maintain such a standard for operators. This standard includes qualifications, duties, responsibilities and the certification requirements for operators as appropriate to The Clean Air Act as amended in 1990 for fossil fuel fired plants with inputs equal to or greater than 10,000 Btu/hr. This Standard does not cover the certification or validation of fossil plant operating procedures, operating practices, facility performance, nor compliance with any particular permit requirement. This standard recognizes the titles or positions to which any particular fossil plant operator may apply, will vary within a facility. Therefore, this standard does not attempt to identify the individual who is required to obtain certification in any class designation. The fossil plant owner is urged to contact the local jurisdiction in which the fossil plant is located in this regard. This standard does not in itself require certification but rather it serves as a means for complying with federal, state, and local regulations which require operators of fossil fuel fired boilers with inputs equal to or greater than 10,000,000 But/hr to be certified. Safety codes and standards are intended to enhance public health and safety. Revisions to this Standard result from committee considerations of factors such as technological advances, new data, and changing environmental and industry needs. Revisions do not imply that previous editions of this standard were inadequate.

  1. Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule

    SciTech Connect (OSTI)

    Emanuel Sachs Tonio Buonassisi

    2013-01-16

    The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the

  2. Capacity Payments in Restructured Markets under Low and High Penetration Levels of Renewable Energy

    Broader source: Energy.gov [DOE]

    Growing levels of variable renewable energy resources arguably create new challenges for capacity market designs, because variable renewable energy suppresses wholesale energy prices while...

  3. Hard carbon nanoparticles as high-capacity, high-stability anodic materials for Na-ion batteries

    SciTech Connect (OSTI)

    Xiao, Lifen; Cao, Yuliang; Henderson, Wesley A.; Sushko, Maria L.; Shao, Yuyan; Xiao, Jie; Wang, Wei; Engelhard, Mark H.; Nie, Zimin; Liu, Jun

    2016-01-01

    Hard carbon nanoparticles (HCNP) were synthesized by the pyrolysis of a polyaniline precursor. The measured Na+ cation diffusion coefficient (10-13-10-15cm2s-1) in the HCNP obtained at 1150 °C is two orders of magnitude lower than that of Li+ in graphite (10-10-13-15cm2s-1), indicating that reducing the carbon particle size is very important for improving electrochemical performance. These measurements also enable a clear visualization of the stepwise reaction phases and rate changes which occur throughout the insertion/extraction processes in HCNP, The electrochemical measurements also show that the nano-sized HCNP obtained at 1150 °C exhibited higher practical capacity at voltages lower than 1.2 V (vs. Na/Na⁺), as well as a prolonged cycling stability, which is attributed to an optimum spacing of 0.366 nm between the graphitic layers and the nano particular size resulting in a low-barrier Na+ cation insertion. These results suggest that HCNP is a very promising high-capacity/stability anode for low cost sodium-ion batteries (SIBs).

  4. High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003

    SciTech Connect (OSTI)

    Rand, J. A.; Culik, J. S.

    2005-10-01

    The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

  5. Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

    SciTech Connect (OSTI)

    Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.

    2015-01-15

    Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20–5000 μm) and cavity height (e.g., 200–1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25 000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al{sub 2}O{sub 3} and TiO{sub 2} processes from Me{sub 3}Al/H{sub 2}O and TiCl{sub 4}/H{sub 2}O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.

  6. K-shell spectroscopy of silicon ions as diagnostic for high electric fields

    SciTech Connect (OSTI)

    Loetzsch, R.; Jaeckel, O.; Hoefer, S.; Kaempfer, T.; Uschmann, I.; Kaluza, M. C.; Polz, J.; Foerster, E.; Stambulchik, E.; Kroupp, E.; Maron, Y.

    2012-11-15

    We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in {mu}m thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hamos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the instrument and background free spectra. This approach will be used in future experiments to study electric fields of the order of TV/m at high density plasmas close to solid density.

  7. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    SciTech Connect (OSTI)

    Yan, Hai Zou, Yi; Yang, Chun-Ju; Chakravarty, Swapnajit; Wang, Zheng; Tang, Naimei; Chen, Ray T.; Fan, Donglei

    2015-03-23

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

  8. Fiber-based adsorbents having high adsorption capacities for recovering dissolved metals and methods thereof

    DOE Patents [OSTI]

    Janke, Christopher J; Dai, Sheng; Oyola, Yatsandra

    2014-05-13

    A fiber-based adsorbent and a related method of manufacture are provided. The fiber-based adsorbent includes polymer fibers with grafted side chains and an increased surface area per unit weight over known fibers to increase the adsorption of dissolved metals, for example uranium, from aqueous solutions. The polymer fibers include a circular morphology in some embodiments, having a mean diameter of less than 15 microns, optionally less than about 1 micron. In other embodiments, the polymer fibers include a non-circular morphology, optionally defining multiple gear-shaped, winged-shaped or lobe-shaped projections along the length of the polymer fibers. A method for forming the fiber-based adsorbents includes irradiating high surface area polymer fibers, grafting with polymerizable reactive monomers, reacting the grafted fibers with hydroxylamine, and conditioning with an alkaline solution. High surface area fiber-based adsorbents formed according to the present method demonstrated a significantly improved uranium adsorption capacity per unit weight over existing adsorbents.

  9. Lithium ion batteries based on nanoporous silicon

    SciTech Connect (OSTI)

    Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa

    2015-09-22

    A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

  10. Size control, quantum confinement, and oxidation kinetics of silicon nanocrystals synthesized at a high rate by expanding thermal plasma

    SciTech Connect (OSTI)

    Han, Lihao E-mail: A.H.M.Smets@tudelft.nl; Zeman, Miro; Smets, Arno H. M. E-mail: A.H.M.Smets@tudelft.nl

    2015-05-25

    The growth mechanism of silicon nanocrystals (Si NCs) synthesized at a high rate by means of expanding thermal plasma chemical vapor deposition technique are studied in this letter. A bimodal Gaussian size distribution is revealed from the high-resolution transmission electron microscopy images, and routes to reduce the unwanted large Si NCs are discussed. Photoluminescence and Raman spectroscopies are employed to study the size-dependent quantum confinement effect, from which the average diameters of the small Si NCs are determined. The surface oxidation kinetics of Si NCs are studied using Fourier transform infrared spectroscopy and the importance of post-deposition passivation treatments of hydrogenated crystalline silicon surfaces are demonstrated.

  11. Solar Silicon Wafers

    Office of Energy Efficiency and Renewable Energy (EERE)

    This photograph features Hao-Chih Yuan, a scientist at the National Renewable Energy Laboratory (NREL). He is reflected in a highly reflective untreated silicone wafer (left) compared to a silicone...

  12. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect (OSTI)

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  13. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  14. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; De Wolf, Stefaan; Ballif, Christophe

    2015-07-13

    Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (EU)-as a function of the sputtering oxygen partial pressure.more » We obtain an EU as low as 128 meV for films with the highest Hall mobility of 60 cm2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm2/Vs) exhibits a similar EU of 130 meV, while ITO (25 cm2/Vs) presents a much larger EU of up to 270 meV. The high film quality, indicated by the low EU, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.« less

  15. Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

    DOE Patents [OSTI]

    Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

    1999-08-24

    High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

  16. Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

    DOE Patents [OSTI]

    Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

    1997-07-08

    High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

  17. Fluoride-Salt-Cooled High-Temperature Reactor (FHR) with Silicon-Carbide-Matrix Coated-Particle Fuel

    SciTech Connect (OSTI)

    Forsberg, C. W.; Terrani, Kurt A; Snead, Lance Lewis; Katoh, Yutai

    2012-01-01

    The FHR is a new reactor concept that uses coated-particle fuel and a low-pressure liquid-salt coolant. Its neutronics are similar to a high-temperature gas-cooled reactor (HTGR). The power density is 5 to 10 times higher because of the superior cooling properties of liquids versus gases. The leading candidate coolant salt is a mixture of {sup 7}LiF and BeF{sub 2} (FLiBe) possessing a boiling point above 1300 C and the figure of merit {rho}C{sub p} (volumetric heat capacity) for the salt slightly superior to water. Studies are underway to define a near-term base-line concept while understanding longer-term options. Near-term options use graphite-matrix coated-particle fuel where the graphite is both a structural component and the primary neutron moderator. It is the same basic fuel used in HTGRs. The fuel can take several geometric forms with a pebble bed being the leading contender. Recent work on silicon-carbide-matrix (SiCm) coated-particle fuel may create a second longer-term fuel option. SiCm coated-particle fuels are currently being investigated for use in light-water reactors. The replacement of the graphite matrix with a SiCm creates a new family of fuels. The first motivation behind the effort is to take advantage of the superior radiation resistance of SiC compared to graphite in order to provide a stable matrix for hosting coated fuel particles. The second motivation is a much more rugged fuel under accident, repository, and other conditions.

  18. High Performance Silicon Monoxide (SiO) Electrode for Next Generation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Next Generation Lithium Ion Batteries Lawrence Berkeley National Laboratory ... Silicon Anodes in Lithium Ion Batteries," Journal of the American Chemical ...

  19. Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules

    SciTech Connect (OSTI)

    Delahoy, A.E.; Tonon, T.; Macneil, J. (Chronar Corp., Princeton, NJ (USA))

    1991-06-01

    The primary objective of this subcontract is to develop the technology for same bandgap, amorphous silicon tandem junction photovoltaic modules having an area of at least 900 cm{sup 2} with the goal of achieving an aperture area efficiency of 9%. A further objective is to demonstrate modules that retain 95% of their under standard light soaking conditions. Our approach to the attainment of these objective is based on the following distinctive technologies: (a) in-house deposition of SiO{sub 2}/SnO{sub 2}:F onto soda lime glass by APCVD to provide a textured, transparent electrode, (b) single chamber r.f. flow discharge deposition of the a-Si:H layers onto vertical substrates contained with high package density in a box carrier'' to which the discharge is confined (c) sputter deposition of highly reflecting, ZnO-based back contacts, and (d) laser scribing of the a-Si:H and electrodes with real-time scribe tracking to minimize area loss. Continued development of single junction amorphous silicon was aggressively pursued as proving ground for various optical enhancement schemes, new p-layers, and i-layers quality. We have rigorously demonstrated that the introduction of a transitional i-layer does not impair stability and that the initial gain in performance is retained. We have demonstrated a small improvement in cell stability through a post-fabrication treatment consisting of multiple, intense light flashes followed by sufficient annealing. Finally, several experiments have indicated that long term stability can be improved by overcoating the SnO{sub 2} with ZnO. 25 refs., 17 figs.

  20. A Low Cost, High Capacity Regenerable Sorbent for Pre-combustion CO{sub 2} Capture

    SciTech Connect (OSTI)

    Alptekin, Gokhan

    2012-09-30

    The overall objective of the proposed research is to develop a low cost, high capacity CO{sub 2} sorbent and demonstrate its technical and economic viability for pre-combustion CO{sub 2} capture. The specific objectives supporting our research plan were to optimize the chemical structure and physical properties of the sorbent, scale-up its production using high throughput manufacturing equipment and bulk raw materials and then evaluate its performance, first in bench-scale experiments and then in slipstream tests using actual coal-derived synthesis gas. One of the objectives of the laboratory-scale evaluations was to demonstrate the life and durability of the sorbent for over 10,000 cycles and to assess the impact of contaminants (such as sulfur) on its performance. In the field tests, our objective was to demonstrate the operation of the sorbent using actual coal-derived synthesis gas streams generated by air-blown and oxygen-blown commercial and pilot-scale coal gasifiers (the CO{sub 2} partial pressure in these gas streams is significantly different, which directly impacts the operating conditions hence the performance of the sorbent). To support the field demonstration work, TDA collaborated with Phillips 66 and Southern Company to carry out two separate field tests using actual coal-derived synthesis gas at the Wabash River IGCC Power Plant in Terre Haute, IN and the National Carbon Capture Center (NCCC) in Wilsonville, AL. In collaboration with the University of California, Irvine (UCI), a detailed engineering and economic analysis for the new CO{sub 2} capture system was also proposed to be carried out using Aspen PlusTM simulation software, and estimate its effect on the plant efficiency.

  1. Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation

    SciTech Connect (OSTI)

    Barbosa, Fernando J.; McKisson, John E.; Qiang, Yi; Steinberger, William; Xi, Wenze; Zorn, Carl J.

    2012-11-01

    A key feature of silicon photomultipliers (SiPMs) that can hinder their wider use in medium and high energy physics applications is their relatively high sensitivity to high energy background radiation, with particular regard to high energy neutrons. Dosages of 1010 neq/cm2 can damage them severely. In this study, some standard versions along with some new formulations are irradiated with a high intensity 241AmBe source up to a total dose of 5 109 neq/cm2. Key parameters monitored include dark noise, photon detection efficiency (PDE), gain, and voltage breakdown. Only dark noise was found to change significantly for this range of dosage. Analysis of the data indicates that within each vendor's product line, the change in dark noise is very similar as a function of increasing dose. At present, the best strategy for alleviating the effects of radiation damage is to cool the devices to minimize the effects of increased dark noise with accumulated dose.

  2. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    SciTech Connect (OSTI)

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.

  3. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

  4. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOE Patents [OSTI]

    Sarin, V.K.

    1990-08-21

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  5. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOE Patents [OSTI]

    Sarin, Vinod K. (Lexington, MA)

    1990-01-01

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  6. Advanced Detector Research - Fabrication and Testing of 3D Active-Edge Silicon Sensors: High Speed, High Yield

    SciTech Connect (OSTI)

    Parker, Sherwood I

    2008-09-01

    Development of 3D silicon radiation sensors employing electrodes fabricated perpendicular to the sensor surfaces to improve fabrication yields and increasing pulse speeds.

  7. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    SciTech Connect (OSTI)

    Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; De Wolf, Stefaan; Ballif, Christophe

    2015-07-13

    Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (EU)-as a function of the sputtering oxygen partial pressure. We obtain an EU as low as 128 meV for films with the highest Hall mobility of 60 cm2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm2/Vs) exhibits a similar EU of 130 meV, while ITO (25 cm2/Vs) presents a much larger EU of up to 270 meV. The high film quality, indicated by the low EU, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.

  8. Grid Inertial Response-Based Probabilistic Determination of Energy Storage System Capacity Under High Solar Penetration

    SciTech Connect (OSTI)

    Yue, Meng; Wang, Xiaoyu

    2015-07-01

    It is well-known that responsive battery energy storage systems (BESSs) are an effective means to improve the grid inertial response to various disturbances including the variability of the renewable generation. One of the major issues associated with its implementation is the difficulty in determining the required BESS capacity mainly due to the large amount of inherent uncertainties that cannot be accounted for deterministically. In this study, a probabilistic approach is proposed to properly size the BESS from the perspective of the system inertial response, as an application of probabilistic risk assessment (PRA). The proposed approach enables a risk-informed decision-making process regarding (1) the acceptable level of solar penetration in a given system and (2) the desired BESS capacity (and minimum cost) to achieve an acceptable grid inertial response with a certain confidence level.

  9. Grid Inertial Response-Based Probabilistic Determination of Energy Storage System Capacity Under High Solar Penetration

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yue, Meng; Wang, Xiaoyu

    2015-07-01

    It is well-known that responsive battery energy storage systems (BESSs) are an effective means to improve the grid inertial response to various disturbances including the variability of the renewable generation. One of the major issues associated with its implementation is the difficulty in determining the required BESS capacity mainly due to the large amount of inherent uncertainties that cannot be accounted for deterministically. In this study, a probabilistic approach is proposed to properly size the BESS from the perspective of the system inertial response, as an application of probabilistic risk assessment (PRA). The proposed approach enables a risk-informed decision-making processmore » regarding (1) the acceptable level of solar penetration in a given system and (2) the desired BESS capacity (and minimum cost) to achieve an acceptable grid inertial response with a certain confidence level.« less

  10. High-capacity nanostructured germanium-containing materials and lithium alloys thereof

    DOE Patents [OSTI]

    Graetz, Jason A.; Fultz, Brent T.; Ahn, Channing; Yazami, Rachid

    2010-08-24

    Electrodes comprising an alkali metal, for example, lithium, alloyed with nanostructured materials of formula Si.sub.zGe.sub.(z-1), where 0capacities, cycle lives, and/or cycling rates compared with similar electrodes made from graphite. These electrodes are useful as anodes for secondary electrochemical cells, for example, batteries and electrochemical supercapacitors.

  11. Silicon Carbide Temperature Monitor Measurements at the High Temperature Test Laboratory

    SciTech Connect (OSTI)

    J. L. Rempe; K. G. Condie; D. L. Knudson; L. L. Snead

    2010-01-01

    Silicon carbide (SiC) temperature monitors are now available for use as temperature sensors in Advanced Test Reactor (ATR) irradiation test capsules. Melt wires or paint spots, which are typically used as temperature sensors in ATR static capsules, are limited in that they can only detect whether a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that may have occurred during irradiation. As part of the efforts initiated by the ATR National Scientific User Facility (NSUF) to make SiC temperature monitors available, a capability was developed to complete post-irradiation evaluations of these monitors. As discussed in this report, the Idaho National Laboratory (INL) selected the resistance measurement approach for detecting peak irradiation temperature from SiC temperature monitors. This document describes the INL efforts to develop the capability to complete these resistance measurements. In addition, the procedure is reported that was developed to assure that high quality measurements are made in a consistent fashion.

  12. Measurement of Radioactive Contamination in the High-Resistivity Silicon CCDs of the DAMIC Experiment

    SciTech Connect (OSTI)

    Aguilar-Arevalo, A.

    2015-08-25

    We present measurements of radioactive contamination in the high-resistivity silicon charge-coupled devices (CCDs) used by the DAMIC experiment to search for dark matter particles. Novel analysis methods, which exploit the unique spatial resolution of CCDs, were developed to identify α and β particles. Uranium and thorium contamination in the CCD bulk was measured through α spectroscopy, with an upper limit on the 238U (232Th) decay rate of 5 (15) kg-1 d-1 at 95% CL. We also searched for pairs of spatially correlated electron tracks separated in time by up to tens of days, as expected from 32Si –32P or 210Pb –210Bi sequences of b decays. The decay rate of 32Si was found to be 80+110-65 (95% CI). An upper limit of ~35 kg -1 d-1 (95% CL) on the 210Pb decay rate was obtained independently by α spectroscopy and the β decay sequence search. Furthermore, these levels of radioactive contamination are sufficiently low for the successful operation of CCDs in the forthcoming 100 g DAMIC detector.

  13. Measurement of Radioactive Contamination in the High-Resistivity Silicon CCDs of the DAMIC Experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aguilar-Arevalo, A.

    2015-08-25

    We present measurements of radioactive contamination in the high-resistivity silicon charge-coupled devices (CCDs) used by the DAMIC experiment to search for dark matter particles. Novel analysis methods, which exploit the unique spatial resolution of CCDs, were developed to identify α and β particles. Uranium and thorium contamination in the CCD bulk was measured through α spectroscopy, with an upper limit on the 238U (232Th) decay rate of 5 (15) kg-1 d-1 at 95% CL. We also searched for pairs of spatially correlated electron tracks separated in time by up to tens of days, as expected from 32Si –32P or 210Pbmore » –210Bi sequences of b decays. The decay rate of 32Si was found to be 80+110-65 (95% CI). An upper limit of ~35 kg -1 d-1 (95% CL) on the 210Pb decay rate was obtained independently by α spectroscopy and the β decay sequence search. Furthermore, these levels of radioactive contamination are sufficiently low for the successful operation of CCDs in the forthcoming 100 g DAMIC detector.« less

  14. Measurement of Radioactive Contamination in the High-Resistivity Silicon CCDs of the DAMIC Experiment

    SciTech Connect (OSTI)

    Aguilar-Arevalo, A.

    2015-08-25

    We present measurements of radioactive contamination in the high-resistivity silicon charge-coupled devices (CCDs) used by the DAMIC experiment to search for dark matter particles. Novel analysis methods, which exploit the unique spatial resolution of CCDs, were developed to identify ? and ? particles. Uranium and thorium contamination in the CCD bulk was measured through ? spectroscopy, with an upper limit on the 238U (232Th) decay rate of 5 (15) kg-1 d-1 at 95% CL. We also searched for pairs of spatially correlated electron tracks separated in time by up to tens of days, as expected from 32Si 32P or 210Pb 210Bi sequences of b decays. The decay rate of 32Si was found to be 80+110-65 (95% CI). An upper limit of ~35 kg -1 d-1 (95% CL) on the 210Pb decay rate was obtained independently by ? spectroscopy and the ? decay sequence search. Furthermore, these levels of radioactive contamination are sufficiently low for the successful operation of CCDs in the forthcoming 100 g DAMIC detector.

  15. Tritium trapping in silicon carbide in contact with solid breeder under high flux isotope reactor irradiation

    SciTech Connect (OSTI)

    H. Katsui; Y. Katoh; A. Hasegawa; M. Shimada; Y. Hatano; T. Hinoki; S. Nogami; T. Tanaka; S. Nagata; T. Shikama

    2013-11-01

    The trapping of tritium in silicon carbide (SiC) injected from ceramic breeding materials was examined via tritium measurements using imaging plate (IP) techniques. Monolithic SiC in contact with ternary lithium oxide (lithium titanate and lithium aluminate) as a ceramic breeder was irradiated in the High Flux Isotope Reactor (HFIR) in Oak Ridge, Tennessee, USA. The distribution of photo-stimulated luminescence (PSL) of tritium in SiC was successfully obtained, which separated the contribution of 14C -rays to the PSL. The tritium incident from ceramic breeders was retained in the vicinity of the SiC surface even after irradiation at 1073 K over the duration of ~3000 h, while trapping of tritium was not observed in the bulk region. The PSL intensity near the SiC surface in contact with lithium titanate was higher than that obtained with lithium aluminate. The amount of the incident tritium and/or the formation of a Li2SiO3 phase on SiC due to the reaction with lithium aluminate under irradiation likely were responsible for this observation.

  16. Powder-based adsorbents having high adsorption capacities for recovering dissolved metals and methods thereof

    DOE Patents [OSTI]

    Janke, Christopher J.; Dai, Sheng; Oyola, Yatsandra

    2016-05-03

    A powder-based adsorbent and a related method of manufacture are provided. The powder-based adsorbent includes polymer powder with grafted side chains and an increased surface area per unit weight to increase the adsorption of dissolved metals, for example uranium, from aqueous solutions. A method for forming the powder-based adsorbent includes irradiating polymer powder, grafting with polymerizable reactive monomers, reacting with hydroxylamine, and conditioning with an alkaline solution. Powder-based adsorbents formed according to the present method demonstrated a significantly improved uranium adsorption capacity per unit weight over existing adsorbents.

  17. Foam-based adsorbents having high adsorption capacities for recovering dissolved metals and methods thereof

    SciTech Connect (OSTI)

    Janke, Christopher J.; Dai, Sheng; Oyola, Yatsandra

    2015-06-02

    Foam-based adsorbents and a related method of manufacture are provided. The foam-based adsorbents include polymer foam with grafted side chains and an increased surface area per unit weight to increase the adsorption of dissolved metals, for example uranium, from aqueous solutions. A method for forming the foam-based adsorbents includes irradiating polymer foam, grafting with polymerizable reactive monomers, reacting with hydroxylamine, and conditioning with an alkaline solution. Foam-based adsorbents formed according to the present method demonstrated a significantly improved uranium adsorption capacity per unit weight over existing adsorbents.

  18. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, M.; Buljan, S.T.; Neil, J.T.

    1991-09-10

    A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  19. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, Marvin; Buljan, Sergej-Tomislav; Neil, Jeffrey T.

    1991-01-01

    A process for producing a silicon nitride-based article of improved fracture toughness and strength. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12 m.sup.2 /g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  20. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  1. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  2. The effects of concentrated ultraviolet light on high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    Ruby, D.S.; Schubert, W.K.

    1991-01-01

    The importance of stability in the performance of solar cells is clearly recognized as fundamental. Some of the highest efficiency silicon solar cells demonstrated to date, such as the Point Contact solar cell and the Passivated Emitter solar cell, rely upon the passivation of cell surfaces in order to minimize recombination, which reduces cell power output. Recently, it has been shown that exposure to ultraviolet (UV) light of wavelengths present in the terrestrial solar spectrum can damage a passivating silicon-oxide interface and increase recombination. In this study, we compared the performance of Point Contact and Passivated Emitter solar cells after exposure to UV light. We also examined the effect of UV exposure on oxide-passivated silicon wafers. We found that current Passivated Emitter designs are stable at both one-sun and under concentrated sunlight. The evolution of Point Contact concentrator cell performance shows a clear trend towards more stable cells. 15 refs., 18 figs.

  3. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    SciTech Connect (OSTI)

    Fortmann, C.M.; Hegedus, S.S. )

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  4. High-silicon {sup 238}PuO{sub 2} fuel characterization study: Half module impact tests

    SciTech Connect (OSTI)

    Reimus, M.A.H.

    1997-01-01

    The General-Purpose Heat Source (GPHS) provides power for space missions by transmitting the heat of [sup 238]Pu decay to an array of thermoelectric elements. The modular GPHS design was developed to address both survivability during launch abort and return from orbit. Previous testing conducted in support of the Galileo and Ulysses missions documented the response of GPHSs to a variety of fragment- impact, aging, atmospheric reentry, and Earth-impact conditions. The evaluations documented in this report are part of an ongoing program to determine the effect of fuel impurities on the response of the heat source to conditions baselined during the Galileo/Ulysses test program. In the first two tests in this series, encapsulated GPHS fuel pellets containing high levels of silicon were aged, loaded into GPHS module halves, and impacted against steel plates. The results show no significant differences between the response of these capsules and the behavior of relatively low-silicon fuel pellets tested previously.

  5. Low hydrogen content, high quality hydrogenated amorphous silicon grown by hot-wire CVD

    SciTech Connect (OSTI)

    Nelson, B.P.; Crandall, R.S.; Iwaniczko, E.; Mahan, A.H.; Wang, Q.; Xu, Y.; Gao, W.

    1999-07-01

    The authors grow hydrogenated amorphous silicon (a-Si:H) by Hot-Wire Chemical Vapor Deposition (HWCVD). The early work with this technique has shown that they can grow a-Si:H that is different from typical a-Si:H materials. Specifically, they demonstrated the ability to grow a-Si:H of exceptional quality with very low hydrogen (H) contents (0.01 to 4 at.%). The deposition chambers in which this early work was done have two limitations; they hold only small-area substrates and they are incompatible with a load-lock. In the efforts to scale up to larger area chambers--that have load-lock compatibility--they encountered difficulty in growing high-quality films that also have a low H content. Substrate temperature has a direct effect on the H content of HWCVD grown a-Si:H. They found that making dramatic changes to the other deposition process parameters--at fixed substrate temperature and filament-to-substrate spacing--did not have much effect on the H content of the resulting films in the new chambers. However, these changes did have profound effects on film quality. They can grow high-quality a-Si:H in the new larger area chambers at 4 at. % H. For example, the lowest known stabilized defect density of a-Si:H is approximately 2 x 10{sup 16} cm{sup {minus}3}, which they have grown in the new chamber at 18 {angstrom}/s. Making changes to the original chamber--making it more like the new reactor--did not increase the hydrogen content at a fixed substrate temperature and filament-to-substrate spacing. They continued to grow high quality films with low H content in spite of these changes. An interesting, and very useful, result of these experiments is that the orientation of the filament with respect to silane flow direction had no influence on film quality or the H content of the films. The condition of the filament is much more important to growing quality films than the geometry of the chamber due to tungsten-silicide formation on the filament.

  6. High-speed digitization readout of silicon photomultipliers for time of flight positron emission tomography

    SciTech Connect (OSTI)

    Ronzhin, A.; Los, S.; Martens, M.; Ramberg, E.; Kim, H.; Chen, C.; Kao, C.; Niessen, K.; Zatserklyaniy, A.; Mazzillo, M.; Carbone, B.; /SGS Thomson, Catania

    2011-02-01

    We report on work to develop a system with about 100 picoseconds (ps) time resolution for time of flight positron emission tomography [TOF-PET]. The chosen photo detectors for the study were Silicon Photomultipliers (SiPM's). This study was based on extensive experience in studying timing properties of SiPM's. The readout of these devices used the commercial high speed digitizer DRS4. We applied different algorithms to get the best time resolution of 155 ps Guassian (sigma) for a LYSO crystal coupled to a SiPM. We consider the work as a first step in building a prototype TOF-PET module. The field of positron-emission-tomography (PET) has been rapidly developing. But there are significant limitations in how well current PET scanners can reconstruct images, related to how fast data can be acquired, how much volume they can image, and the spatial and temporal resolution of the generated photons. Typical modern scanners now include multiple rings of detectors, which can image a large volume of the patient. In this type of scanner, one can treat each ring as a separate detector and require coincidences only within the ring, or treat the entire region viewed by the scanner as a single 3 dimensional volume. This 3d technique has significantly better sensitivity since more photon pair trajectories are accepted. However, the scattering of photons within the volume of the patient, and the effect of random coincidences limits the technique. The advent of sub-nanosecond timing resolution detectors means that there is potentially much better rejection of scattered photon events and random coincidence events in the 3D technique. In addition, if the timing is good enough, then the origin of photons pairs can be determined better, resulting in improved spatial resolution - so called 'Time-of-Flight' PET, or TOF-PET. Currently a lot of activity has occurred in applications of SiPMs for TOF-PET. This is due to the devices very good time resolution, low profile, lack of high voltage

  7. An Isoreticular Series of Metal-Organic Frameworks with Dendritic Hexacarboxylate Ligands and Exceptionally High Gas-Uptake Capacity

    SciTech Connect (OSTI)

    Yuan, Daqiang; Zhao, Dan; Sun, Daofeng; Zhou, Hong-Cai

    2010-10-01

    Metal-organic frameworks (MOFs) are newly emerging porous materials. Owing to their large surface area and tunable pore size and geometry, they have been studied for applications in gas storage and separation, especially in hydrogen and methane storage and carbon dioxide capture. It has been well established that the high-pressure gravimetric hydrogen-adsorption capacity of an MOF is directly proportional to its surface area. However, MOFs of high surface areas tend to decompose upon activation. In our previous work, we described an approach toward stable MOFs with high surface areas by incorporating mesocavities with microwindows. To extend this work, we now present an isoreticular series of (3,24)-connected MOFs made from dendritic hexacarboxylate ligands, one of which has a Langmuir surface area as high as 6033 m2 g-1. In addition, the gas-adsorption properties of this new isoreticular MOF series have been studied.

  8. Silicon Cells | Open Energy Information

    Open Energy Info (EERE)

    a low cost method of processing silicon to produce a new generation of high energy density batteries. References: Silicon Cells1 This article is a stub. You can help OpenEI...

  9. Vehicle Technologies Office Merit Review 2014: High-Capacity Polyanion Cathodes

    Broader source: Energy.gov [DOE]

    Presentation given by The University of Texas at Austin at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high...

  10. Vehicle Technologies Office Merit Review 2014: Metal-Based High Capacity Li-Ion Anodes

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by Binghamton University-SUNY at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about metal-based high...

  11. High-capacity single-pressure SF/sub 6/ interrupters. Final report

    SciTech Connect (OSTI)

    Rostron, J R; Berkebile, L E; Spindle, H E

    1983-05-01

    The object of this project was to design and develop a high-voltage, single-pressure, SF/sub 6/ interrupter with an interrupting capability of 120 kA at 145 kV with a continuous current rating of 5000 A and an interrupting time of 1.5 cycles or less. A second objective of 100 kA at 242 kV was added during the project. Mathematical models were used to extrapolate design requirements from existing data for 63 and 80 kA. Two model puffers, one liquid and the other gas, were designed and tested to obtain data at 100 kA. An interrupter, optimized on the basis of total prospective breaker cost, was designed using the mathematical models. A study was made of the construction materials to operate under the high-stress conditions in this interrupter. Existing high-speed movies of high-current arcs under double-flow conditions were analyzed to obtain more information for modeling the interrupter. The optimized interrupter design was built and tested. The interrupting capability confirmed calculations of predicted performance near current zero; however, the dielectric strength after interrupting these high-current arcs was not adequate for the 145-kV or the 242-kV ratings. The dielectric strength was reduced by hot gases flowing out of the interrupter. Valuable data have been obtained for modeling the SF/sub 6/ puffer interrupter for high currents.

  12. Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

    SciTech Connect (OSTI)

    Galperin, V. A.; Kitsyuk, E. P.; Pavlov, A. A.; Shamanaev, A. A.

    2015-12-15

    New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.

  13. High Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology, Final Technical Report, 6 March 1998 - 15 October 2001

    SciTech Connect (OSTI)

    Guha, S.

    2001-11-08

    This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate with a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.

  14. Mechanochemical approaches to employ silicon as a lithium-ion battery anode

    SciTech Connect (OSTI)

    Shimoi, Norihiro Bahena-Garrido, Sharon; Tanaka, Yasumitsu; Qiwu, Zhang

    2015-05-15

    Silicon is essential as an active material in lithium-ion batteries because it provides both high-charge and optimal cycle characteristics. The authors attempted to realize a composite by a simple mechanochemical grinding approach of individual silicon (Si) particles and copper monoxide (CuO) particles to serve as an active material in the anode and optimize the charge-discharge characteristics of a lithium-ion battery. The composite with Si and CuO allowed for a homogenous dispersion with nano-scale Si grains, nano-scale copper-silicon alloy grains and silicon monoxide oxidized the oxide from CuO. The authors successfully achieved the synthesis of an active composite unites the structural features of an active material based on silicon composite as an anode in Li-ion battery with high capacity and cyclic reversible charge properties of 3256 mAh g{sup −1} after 200 cycles.

  15. Silicon dioxide and hafnium dioxide evaporation characteristics from a high-frequency sweep e-beam system

    SciTech Connect (OSTI)

    Chow, R. [Lawrence Livermore National Laboratory, Livermore, California 94551-0808 (United States); Tsujimoto, N. [MDC Vacuum Products Corporation, Hayward, California 94545 (United States)

    1996-09-01

    Reactive oxygen evaporation characteristics were determined as a function of the front-panel control parameters provided by a programmable, high-frequency sweep e-beam system. An experimental design strategy used deposition rate, beam speed, pattern, azimuthal rotation speed, and dwell time as the variables. The optimal settings for obtaining a broad thickness distribution, efficient silicon dioxide boule consumption, and minimal hafnium dioxide defect density were generated. The experimental design analysis showed the compromises involved with evaporating these oxides. {copyright} {ital 1996 Optical Society of America.}

  16. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  17. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  18. Design and Synthesis of Novel Porous Metal-Organic Frameworks (MOFs) Toward High Hydrogen Storage Capacity

    SciTech Connect (OSTI)

    Mohamed, Eddaoudi; Zaworotko, Michael; Space, Brian; Eckert, Juergen

    2013-05-08

    Statement of Objectives: 1. Synthesize viable porous MOFs for high H2 storage at ambient conditions to be assessed by measuring H2 uptake. 2. Develop a better understanding of the operative interactions of the sorbed H2 with the organic and inorganic constituents of the sorbent MOF by means of inelastic neutron scattering (INS, to characterize the H2-MOF interactions) and computational studies (to interpret the data and predict novel materials suitable for high H2 uptake at moderate temperatures and relatively low pressures). 3. Synergistically combine the outcomes of objectives 1 and 2 to construct a made-to-order inexpensive MOF that is suitable for super H2 storage and meets the DOE targets - 6% H2 per weight (2kWh/kg) by 2010 and 9% H2 per weight (3kWh/kg) by 2015. The ongoing research is a collaborative experimental and computational effort focused on assessing H2 storage and interactions with pre-selected metal-organic frameworks (MOFs) and zeolite-like MOFs (ZMOFs), with the eventual goal of synthesizing made-to-order high H2 storage materials to achieve the DOE targets for mobile applications. We proposed in this funded research to increase the amount of H2 uptake, as well as tune the interactions (i.e. isosteric heats of adsorption), by targeting readily tunable MOFs:

  19. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

    SciTech Connect (OSTI)

    Uzu, Hisashi E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi; Nakano, Kunihiro; Meguro, Tomomi; Yamamoto, Kenji; Hernández, José Luis; Kim, Hui-Seon; Park, Nam-Gyu E-mail: npark@skku.edu

    2015-01-05

    We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cell or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.

  20. High temperature adhesive silicone foam composition, foam generating system and method of generating foam

    DOE Patents [OSTI]

    Mead, Judith W.; Montoya, Orelio J.; Rand, Peter B.; Willan, Vernon O.

    1984-01-01

    Access to a space is impeded by generation of a sticky foam from a silicone polymer and a low boiling solvent such as a halogenated hydrocarbon. In a preferred aspect, the formulation is polydimethylsiloxane gel mixed with F502 Freon as a solvent and blowing agent, and pressurized with CO.sub.2 in a vessel to about 250 PSI, whereby when the vessel is opened, a sticky and solvent resistant foam is deployed. The foam is deployable, over a wide range of temperatures, adhering to wet surfaces as well as dry, is stable over long periods of time and does not propagate flame or lose adhesive properties during an externally supported burn.

  1. Final Report: DE- FC36-05GO15063, Fundamental Studies of Advanced High-Capacity, Reversible Metal Hydrides

    SciTech Connect (OSTI)

    Jensen, Craig; McGrady, Sean; Severa, Godwin; Eliseo, Jennifer; Chong, Marina

    2015-02-08

    The project was component of the US DOE, Metal Hydride Center of Excellence (MHCoE). The Sandia National Laboratory led center was established to conduct highly collaborative and multi-disciplinary applied R&D to develop new reversible hydrogen storage materials that meet or exceed DOE/FreedomCAR 2010 and 2015 system targets for hydrogen storage materials. Our approach entailed a wide variety of activities ranging from synthesis, characterization, and evaluation of new candidate hydrogen storage materials; screening of catalysts for high capacity materials requiring kinetics enhancement; development of low temperature methods for nano-confinement of hydrides and determining its effects on the kinetics and thermodynamics of hydrides; and development of novel processes for the direct re-hydrogenation of materials. These efforts have resulted in several advancements the development of hydrogen storage materials. We have greatly extended the fundamental knowledge about the highly promising hydrogen storage carrier, alane (AlH₃), by carrying out the first crystal structure determinations and the first determination of the heats of dehydrogenation of β–AlH₃ and γ-AlD₃. A low-temperature homogenous organometallic approach to incorporation of Al and Mg based hydrides into carbon aerogels has been developed that that allows high loadings without degradation of the nano-porous scaffold. Nano-confinement was found to significantly improve the dehydrogenation kinetics but not effect the enthalpy of dehydrogenation. We conceived, characterized, and synthesized a novel class of potential hydrogen storage materials, bimetallic borohydrides. These novel compounds were found to have many favorable properties including release of significant amounts of hydrogen at moderate temperatures (75-190ºC). However, in situ IR studies in tandem with thermal gravimetric analysis have shown that about 0.5 equivalents of diborane are released during the dehydrogenation making re

  2. A novel high capacity positive electrode material with tunnel-type structure for aqueous sodium-ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Yuesheng; Mu, Linqin; Liu, Jue; Yang, Zhenzhong; Yu, Xiqian; Gu, Lin; Hu, Yong -Sheng; Li, Hong; Yang, Xiao -Qing; Chen, Liquan; et al

    2015-08-06

    In this study, aqueous sodium-ion batteries have shown desired properties of high safety characteristics and low-cost for large-scale energy storage applications such as smart grid, because of the abundant sodium resources as well as the inherently safer aqueous electrolytes. Among various Na insertion electrode materials, tunnel-type Na0.44MnO2 has been widely investigated as a positive electrode for aqueous sodium-ion batteries. However, the low achievable capacity hinders its practical applications. Here we report a novel sodium rich tunnel-type positive material with a nominal composition of Na0.66[Mn0.66Ti0.34]O2. The tunnel-type structure of Na0.44MnO2 obtained for this compound was confirmed by XRD and atomic-scale STEM/EELS.more » When cycled as positive electrode in full cells using NaTi2(PO4)3/C as negative electrode in 1M Na2SO4 aqueous electrolyte, this material shows the highest capacity of 76 mAh g-1 among the Na insertion oxides with an average operating voltage of 1.2 V at a current rate of 2C. These results demonstrate that Na0.66[Mn0.66Ti0.34]O2 is a promising positive electrode material for rechargeable aqueous sodium-ion batteries.« less

  3. Black Conductive Titanium Oxide High-Capacity Materials for Battery Electrodes

    SciTech Connect (OSTI)

    Han, W.

    2011-05-18

    Stoichiometric titanium dioxide (TiO{sub 2}) is one of the most widely studied transitionmetal oxides because of its many potential applications in photoelectrochemical systems, such as dye-sensitized TiO{sub 2} electrodes for photovoltaic solar cells, and water-splitting catalysts for hydrogen generation, and in environmental purification for creating or degrading specific compounds. However, TiO{sub 2} has a wide bandgap and high electrical resistivity, which limits its use as an electrode. A set of non-stoichiometric titanium oxides called the Magneli phases, having a general formula of Ti{sub n}O{sub 2n-1} with n between 4 and 10, exhibits lower bandgaps and resistivities, with the highest electrical conductivities reported for Ti{sub 4}O{sub 7}. These phases have been formulated under different conditions, but in all reported cases the resulting oxides have minimum grain sizes on the order of micrometers, regardless of the size of the starting titanium compounds. In this method, nanoparticles of TiO{sub 2} or hydrogen titanates are first coated with carbon using either wet or dry chemistry methods. During this process the size and shape of the nanoparticles are 'locked in.' Subsequently the carbon-coated nanoparticles are heated. This results in the transformation of the original TiO{sub 2} or hydrogen titanates to Magneli phases without coarsening, so that the original size and shape of the nanoparticles are maintained to a precise degree. People who work on batteries, fuel cells, ultracapacitors, electrosynthesis cells, electro-chemical devices, and soil remediation have applications that could benefit from using nanoscale Magneli phases of titanium oxide. Application of these electrode materials may not be limited to substitution for TiO{sub 2} electrodes. Combining the robustness and photosensitivity of TiO{sub 2} with higher electrical conductivity may result in a general electrode material.

  4. Research on stable, high-efficiency amorphous silicon multijunction modules. Annual subcontract report, 1 December 1991--31 October 1992

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J.

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  5. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    DOE Patents [OSTI]

    Sarin, V.K.

    1991-07-30

    A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

  6. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    DOE Patents [OSTI]

    Sarin, Vinod K.

    1991-01-01

    A process for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900.degree.-1500.degree. C. and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

  7. Research on high-efficiency, multiple-gap, multijunction, amorphous-silicon-based alloy thin-film solar cells

    SciTech Connect (OSTI)

    Guha, S. )

    1989-06-01

    This report presents results of research on advancing our understanding of amorphous-silicon-based alloys and their use in small-area multijunction solar cells. The principal objectives of the program are to develop a broad scientific base for the chemical, structural, optical, and electronic properties of amorphous-silicon-based alloys; to determine the optimum properties of these alloy materials as they relate to high-efficiency cells; to determine the optimum device configuration for multijunction cells; and to demonstrate proof-of-concept, multijunction, a-Si-alloy-based solar cells with 18% efficiency under standard AM1.5 global insolation conditions and with an area of at least 1 cm{sup 2}. A major focus of the work done during this reporting period was the optimization of a novel, multiple-graded structure that enhances cell efficiency through band-gap profiling. The principles of the operation of devices incorporating such a structure, computer simulations of those, and experimental results for both single- and multijunction cells prepared by using the novel structure are discussed in detail. 14 refs., 35 figs., 7 tabs.

  8. High Dose Neutron Irradiation of Hi-Nicalon Type S Silicon Carbide Composites, Part 2. Mechanical and Physical Properties

    SciTech Connect (OSTI)

    Katoh, Yutai; Nozawa, Takashi; Shih, Chunghao Phillip; Ozawa, Kazumi; Koyanagi, Takaaki; Porter, Wallace D; Snead, Lance Lewis

    2015-01-07

    Nuclear-grade silicon carbide (SiC) composite material was examined for mechanical and thermophysical properties following high-dose neutron irradiation in the High Flux Isotope Reactor at a temperature range of 573–1073 K. Likewise, the material was chemical vapor-infiltrated SiC-matrix composite with a two-dimensional satin weave Hi-Nicalon Type S SiC fiber reinforcement and a multilayered pyrocarbon/SiC interphase. Moderate (1073 K) to very severe (573 K) degradation in mechanical properties was found after irradiation to >70 dpa, whereas no evidence was found for progressive evolution in swelling and thermal conductivity. The swelling was found to recover upon annealing beyond the irradiation temperature, indicating the irradiation temperature, but only to a limited extent. Moreover, the observed strength degradation is attributed primarily to fiber damage for all irradiation temperatures, particularly a combination of severe fiber degradation and likely interphase damage at relatively low irradiation temperatures.

  9. Silicon nitride swirl lower-chamber for high power turbocharged diesel engines

    SciTech Connect (OSTI)

    Kamiya, S.; Murachi, M.; Kawamoto, H.; Kato, S.; Kawakami, S.; Suzuki, Y.

    1985-01-01

    This paper describes application of sintered silicon nitride to the swirl lower-chamber in order to improve performance of turbocharged diesel engines. Various stress analyses by finite element method and stress measurements have been applied to determine the design specifications for the component, which compromise brittleness of ceramic materials. Material development was conducted to evaluate strength, fracture toughness, and thermal properties for the sintered bodies. Ceramic injection molding has been employed to fabricate components with large quantities. In the present work. Quality assurance for the components can be made by reliability evaluation methods as well as non-destructive and stress loading inspections. It is found that the engine performance with ceramic component has been increased in the power out put of 9ps as compared to that of conventional engines.

  10. A novel high capacity positive electrode material with tunnel-type structure for aqueous sodium-ion batteries

    SciTech Connect (OSTI)

    Wang, Yuesheng; Mu, Linqin; Liu, Jue; Yang, Zhenzhong; Yu, Xiqian; Gu, Lin; Hu, Yong -Sheng; Li, Hong; Yang, Xiao -Qing; Chen, Liquan; Huang, Xuejie

    2015-08-06

    In this study, aqueous sodium-ion batteries have shown desired properties of high safety characteristics and low-cost for large-scale energy storage applications such as smart grid, because of the abundant sodium resources as well as the inherently safer aqueous electrolytes. Among various Na insertion electrode materials, tunnel-type Na0.44MnO2 has been widely investigated as a positive electrode for aqueous sodium-ion batteries. However, the low achievable capacity hinders its practical applications. Here we report a novel sodium rich tunnel-type positive material with a nominal composition of Na0.66[Mn0.66Ti0.34]O2. The tunnel-type structure of Na0.44MnO2 obtained for this compound was confirmed by XRD and atomic-scale STEM/EELS. When cycled as positive electrode in full cells using NaTi2(PO4)3/C as negative electrode in 1M Na2SO4 aqueous electrolyte, this material shows the highest capacity of 76 mAh g-1 among the Na insertion oxides with an average operating voltage of 1.2 V at a current rate of 2C. These results demonstrate that Na0.66[Mn0.66Ti0.34]O2 is a promising positive electrode material for rechargeable aqueous sodium-ion batteries.

  11. Zeolite Y adsorbents with high vapor uptake capacity and robust cycling stability for potential applications in advanced adsorption heat pumps

    SciTech Connect (OSTI)

    Li, XS; Narayanan, S; Michaelis, VK; Ong, TC; Keeler, EG; Kim, H; Mckay, IS; Griffin, RG; Wang, EN

    2015-01-01

    Modular and compact adsorption heat pumps (AHPs) promise an energy-efficient alternative to conventional vapor compression based heating, ventilation and air conditioning systems. A key element in the advancement of AHPs is the development of adsorbents with high uptake capacity, fast intracrystalline diffusivity and durable hydrothermal stability. Herein, the ion exchange of NaY zeolites with ingoing Mg2+ ions is systematically studied to maximize the ion exchange degree (IED) for improved sorption performance. It is found that beyond an ion exchange threshold of 64.1%, deeper ion exchange does not benefit water uptake capacity or characteristic adsorption energy, but does enhance the vapor diffusivity. In addition to using water as an adsorbate, the uptake properties of Mg, Na-Y zeolites were investigated using 20 wt.% MeOH aqueous solution as a novel anti-freeze adsorbate, revealing that the MeOH additive has an insignificant influence on the overall sorption performance. We also demonstrated that the lab-scale synthetic scalability is robust, and that the tailored zeolites scarcely suffer from hydrothermal stability even after successive 108-fold adsorption/desorption cycles. The samples were analyzed using N-2 sorption, Al-27/Si-29 MAS NMR spectroscopy, ICP-AES, dynamic vapor sorption, SEM, Fick's 2nd law and D-R equation regressions. Among these, close examination of sorption isotherms for H2O and N-2 adsorbates allows us to decouple and extract some insightful information underlying the complex water uptake phenomena. This work shows the promising performance of our modified zeolites that can be integrated into various AHP designs for buildings, electronics, and transportation applications. (C) 2014 Elsevier Inc. All rights reserved.

  12. Porous silicon gettering

    SciTech Connect (OSTI)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R.

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  13. Research on stable, high-efficiency amorphous silicon multijunction modules. Semiannual subcontract report, 1 March 1993--30 November 1993

    SciTech Connect (OSTI)

    Guha, S.

    1994-03-01

    This report describes the progress made during the first half of Phase III of the R&D program to obtain high-efficiency amorphous silicon alloy multijunction modules. The highlight of the work includes (1) demonstration of the world`s highest initial module efficiency (area of 0.09 m{sup 2}) of 11.4% as confirmed by NREL, and (2) demonstration of stable module efficiency of 9.5% after 1-sun light soaking for 1000 h at 50{degrees}C. In addition, fundamental studies were carried out to improve material properties of the component cells of the multijunction structure and to understand the optical losses associated with the back reflector.

  14. Vehicle Technologies Office Merit Review 2014: Wiring Up Silicon Nanostructures for High Energy Lithium-Ion Battery Anodes

    Broader source: Energy.gov [DOE]

    Presentation given by Stanford University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about wiring up silicon...

  15. Device Architecture and Lifetime Requirements for High Efficiency Multicrystalline Silicon Solar Cells

    SciTech Connect (OSTI)

    Wagner, H.; Hofstetter, J.; Mitchell, B.; Altermatt, P.; Buonassisi, T.

    2015-03-23

    We present a numerical simulation study of different multicrystalline silicon materials and solar cell architectures to understand today's efficiency limitations and future efficiency possibilities. We compare conventional full-area BSF and PERC solar cells to future cell designs with a gallium phosphide heteroemitter. For all designs, mc-Si materials with different excess carrier lifetime distributions are used as simulation input parameters to capture a broad range of materials. The results show that conventional solar cell designs are sufficient for generalized mean lifetimes between 40 – 90 μs, but do not give a clear advantage in terms of efficiency for higher mean lifetime mc-Si material because they are often limited by recombination in the phosphorus diffused emitter region. Heteroemitter designs instead increase in cell efficiency considerable up to generalized mean lifetimes of 380 μs because they are significantly less limited by recombination in the emitter and the bulk lifetime becomes more important. In conclusion, to benefit from increasing mc-Si lifetime, new cell designs, especially heteroemitter, are desirable.

  16. High-temperature morphological evolution of lithographically introduced cavities in silicon carbide

    SciTech Connect (OSTI)

    Narushima, Takayuki; Glaeser, Andreas M.

    2000-12-01

    Internal cavities of controlled geometry and crystallography were introduced in 6H silicon carbide single crystals by combining lithographic methods, ion beam etching, and solid-state diffusion bonding. The morphological evolution of these internal cavities (negative crystals) in response to anneals of up to 128 h duration at 1900 degrees C was examined using optical microscopy. Surface energy anisotropy and faceting have a strong influence on both the geometric and kinetic characteristics of evolution. Decomposition of 12{bar 1}0 cavity edges into 101{bar 0} facets was observed after 16 h anneals, indicating that 12{bar 1}0 faces are not components of the Wulff shape. The shape evolution kinetics of penny-shaped cavities were also investigated. Experimentally observed evolution rates decreased much more rapidly with those predicted by a model in which surface diffusion is assumed to be rate-limiting. This suggests that the development of facets, and the associated loss of ledges and terraces during the initial stages of evolution results in an evolution process limited by the nucleation rate of attachment/detachment sites (ledges) on the facets.

  17. From Fundamental Understanding To Predicting New Nanomaterials For High Capacity Hydrogen/Methane Storage and Carbon Capture

    SciTech Connect (OSTI)

    Yildirim, Taner

    2015-03-03

    On-board hydrogen/methane storage in fuel cell-powered vehicles is a major component of the national need to achieve energy independence and protect the environment. The main obstacles in hydrogen storage are slow kinetics, poor reversibility and high dehydrogenation temperatures for the chemical hydrides; and very low desorption temperatures/energies for the physisorption materials (MOF’s, porous carbons). Similarly, the current methane storage technologies are mainly based on physisorption in porous materials but the gravimetric and volumetric storage capacities are below the target values. Finally, carbon capture, a critical component of the mitigation of CO2 emissions from industrial plants, also suffers from similar problems. The solid-absorbers such as MOFs are either not stable against real flue-gas conditions and/or do not have large enough CO2 capture capacity to be practical and cost effective. In this project, we addressed these challenges using a unique combination of computational, synthetic and experimental methods. The main scope of our research was to achieve fundamental understanding of the chemical and structural interactions governing the storage and release of hydrogen/methane and carbon capture in a wide spectrum of candidate materials. We studied the effect of scaffolding and doping of the candidate materials on their storage and dynamics properties. We reviewed current progress, challenges and prospect in closely related fields of hydrogen/methane storage and carbon capture.[1-5] For example, for physisorption based storage materials, we show that tap-densities or simply pressing MOFs into pellet forms reduce the uptake capacities by half and therefore packing MOFs is one of the most important challenges going forward. For room temperature hydrogen storage application of MOFs, we argue that MOFs are the most promising scaffold materials for Ammonia-Borane (AB) because of their unique interior active metal-centers for AB binding and well

  18. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect (OSTI)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  19. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  20. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H.; Sigmon, Thomas W.

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  1. High-Efficiency Amorphous Silicon and Nanocrystalline Silicon-Based Solar Cells and Modules: Final Technical Progress Report, 30 January 2006 - 29 January 2008

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2008-05-01

    United Solar Ovonic successfully used its spectrum-splitting a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure in their manufacturing plants, achieving a manufacturing capacity of 118 MW in 2007, and set up a very aggressive expansion plan to achieve grid parity.

  2. Aluminium doped ceriazirconia supported palladium-alumina catalyst with high oxygen storage capacity and CO oxidation activity

    SciTech Connect (OSTI)

    Dong, Qiang; Yin, Shu Guo, Chongshen; Wu, Xiaoyong; Kimura, Takeshi; Sato, Tsugio

    2013-12-15

    Graphical abstract: Ce{sub 0.5}Zr{sub 0.3}Al{sub 0.2}O{sub 1.9}/Pd/?-Al{sub 2}O{sub 3} possessed high OSC and CO oxidation activity at low temperature. - Highlights: A new OSC material of Ce{sub 0.5}Zr{sub 0.3}Al{sub 0.2}O{sub 1.9}/Pd/?-Al{sub 2}O{sub 3} is prepared via a mechanochemical method. Ce{sub 0.5}Zr{sub 0.3}Al{sub 0.2}O{sub 1.9}/Pd/?-Al{sub 2}O{sub 3} showed high OSC even after calcination at 1000 C for 20 h. Ce{sub 0.5}Zr{sub 0.3}Al{sub 0.2}O{sub 1.9}/Pd/?-Al{sub 2}O{sub 3} exhibited the highest CO oxidation activity at low temperature correlates with enhanced OSC. - Abstract: The Ce{sub 0.5}Zr{sub 0.3}Al{sub 0.2}O{sub 1.9}/Pd-?-Al{sub 2}O{sub 3} catalyst prepared by a mechanochemical route and calcined at 1000 C for 20 h in air atmosphere to evaluate the thermal stability. The prepared Ce{sub 0.5}Zr{sub 0.3}Al{sub 0.2}O{sub 1.9}/Pd-?-Al{sub 2}O{sub 3} catalyst was characterized for the oxygen storage capacity (OSC) and CO oxidation activity in automotive catalysis. For the characterization, X-ray diffraction, transmission electron microscopy and the BrunauerEmmetTeller (BET) technique were employed. The OSC values of all samples were measured at 600 C using thermogravimetric-differential thermal analysis. Ce{sub 0.5}Zr{sub 0.3}Al{sub 0.2}O{sub 1.9}/Pd-?-Al{sub 2}O{sub 3} catalyst calcined at 1000 C for 20 h with a BET surface area of 41 m{sup 2} g{sup ?1} exhibited the considerably high OSC of 583 ?mol-O g{sup ?1} and good OSC performance stability. The same synthesis route was employed for the preparation of the CeO{sub 2}/Pd-?-Al{sub 2}O{sub 3} and Ce{sub 0.5}Zr{sub 0.5}O{sub 2}/Pd-?-Al{sub 2}O{sub 3} for comparison.

  3. High Dose Neutron Irradiation of Hi-Nicalon Type S Silicon Carbide Composites, Part 2. Mechanical and Physical Properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Katoh, Yutai; Nozawa, Takashi; Shih, Chunghao Phillip; Ozawa, Kazumi; Koyanagi, Takaaki; Porter, Wallace D; Snead, Lance Lewis

    2015-01-07

    Nuclear-grade silicon carbide (SiC) composite material was examined for mechanical and thermophysical properties following high-dose neutron irradiation in the High Flux Isotope Reactor at a temperature range of 573–1073 K. Likewise, the material was chemical vapor-infiltrated SiC-matrix composite with a two-dimensional satin weave Hi-Nicalon Type S SiC fiber reinforcement and a multilayered pyrocarbon/SiC interphase. Moderate (1073 K) to very severe (573 K) degradation in mechanical properties was found after irradiation to >70 dpa, whereas no evidence was found for progressive evolution in swelling and thermal conductivity. The swelling was found to recover upon annealing beyond the irradiation temperature, indicating themore » irradiation temperature, but only to a limited extent. Moreover, the observed strength degradation is attributed primarily to fiber damage for all irradiation temperatures, particularly a combination of severe fiber degradation and likely interphase damage at relatively low irradiation temperatures.« less

  4. Silicon nanocrystals with high boron and phosphorus concentration hydrophilic shell—Raman scattering and X-ray photoelectron spectroscopic studies

    SciTech Connect (OSTI)

    Fujii, Minoru Sugimoto, Hiroshi; Hasegawa, Masataka; Imakita, Kenji

    2014-02-28

    Boron (B) and phosphorus (P) codoped silicon (Si) nanocrystals, which exhibit very wide range tunable luminescence due to the donor to acceptor transitions and can be dispersed in polar liquids without organic ligands, are studied by Raman scattering and X-ray photoelectron spectroscopies. Codoped Si nanocrystals exhibit a Raman spectrum significantly different from those of intrinsic ones. First, the Raman peak energy is almost insensitive to the size and is very close to that of bulk Si crystal in the diameter range of 2.7 to 14 nm. Second, the peak is much broader than that of intrinsic ones. Furthermore, an additional broad peak, the intensity of which is about 20% of the main peak, appears around 650 cm{sup −1}. The peak can be assigned to local vibrational modes of substitutional B and B-P pairs, B clusters, B-interstitial clusters, etc. in Si crystal. The Raman and X-ray photoelectron spectroscopic studies suggest that a crystalline shell heavily doped with these species is formed at the surface of a codoped Si nanocrystal and it induces the specific properties, i.e., hydrophilicity, high-stability in water, high resistance to hydrofluoric acid, etc.

  5. The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.

    SciTech Connect (OSTI)

    Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

    2013-08-01

    The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250C, the temperature may reach 1600C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

  6. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, R.; Baik, S.

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  7. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, Rishi; Baik, Sunggi

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  8. Six Thousand Electrochemical Cycles of Double-Walled Silicon Nanotube Anodes for Lithium Ion Batteries

    SciTech Connect (OSTI)

    Wu, H

    2011-08-18

    Despite remarkable progress, lithium ion batteries still need higher energy density and better cycle life for consumer electronics, electric drive vehicles and large-scale renewable energy storage applications. Silicon has recently been explored as a promising anode material for high energy batteries; however, attaining long cycle life remains a significant challenge due to materials pulverization during cycling and an unstable solid-electrolyte interphase. Here, we report double-walled silicon nanotube electrodes that can cycle over 6000 times while retaining more than 85% of the initial capacity. This excellent performance is due to the unique double-walled structure in which the outer silicon oxide wall confines the inner silicon wall to expand only inward during lithiation, resulting in a stable solid-electrolyte interphase. This structural concept is general and could be extended to other battery materials that undergo large volume changes.

  9. Characterization of microstructure, texture and magnetic properties in twin-roll casting high silicon non-oriented electrical steel

    SciTech Connect (OSTI)

    Li, Hao-Ze; Liu, Hai-Tao Liu, Zhen-Yu Lu, Hui-Hu; Song, Hong-Yu; Wang, Guo-Dong

    2014-02-15

    An Fe-6.5 wt.% Si-0.3 wt.% Al as-cast sheet was produced by twin-roll strip casting process, then treated with hot rolling, warm rolling and annealing. A detailed study of the microstructure and texture evolution at different processing stages was carried out by optical microscopy, X-ray diffraction and electron backscattered diffraction analysis. The initial as-cast strip showed strong columnar grains and pronounced < 001 >//ND texture. The hot rolled and warm rolled sheets were characterized by large amounts of shear bands distributed through the thickness together with strong < 110 >//RD texture and weak < 111 >//ND texture. After annealing, detrimental < 111 >//ND texture almost disappeared while beneficial (001)<210 >, (001)<010 >, (115)<5 − 10 1 > and (410) < 001 > recrystallization textures were formed, thus the magnetic induction of the annealed sheet was significantly improved. The recrystallization texture in the present study could be explained by preferred nucleation and grain growth mechanism. - Highlights: • A high silicon as-cast strip with columnar structure was produced. • A thin warm rolled sheet without large edge cracks was obtained. • Microstructure and texture evolution at each stage were investigated. • Beneficial (001)<210 >, (001)<010 >, (410)<001 > recrystallization textures were formed. • The magnetic induction of annealed sheet was significantly improved.

  10. Cermet layer for amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J.

    1979-01-01

    A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

  11. NREL: Photovoltaics Research - Silicon Materials and Devices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Top light blue layer has the text epi c-Si absorber. Schematic diagram of the film crystal silicon solar cell. A high-quality crystal silicon absorber is grown epitaxially on a ...

  12. Porous silicon based anode material formed using metal reduction

    DOE Patents [OSTI]

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  13. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=58 GPa, T=1400K2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  14. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  15. Single crystalline mesoporous silicon nanowires

    SciTech Connect (OSTI)

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  16. Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

    1991-09-17

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

  17. Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, Marvin L.; Buljan, Sergej-Tomislav; Neil, Jeffrey T.

    1991-01-01

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength. The powder mixture includes 9a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon mitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12m.sup.2 g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified articel an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder.

  18. High efficiency low cost thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, B.L.

    1999-04-27

    A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

  19. Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates

    DOE Patents [OSTI]

    Mahan, Archie Harvin; Molenbroek, Edith C.; Gallagher, Alan C.; Nelson, Brent P.; Iwaniczko, Eugene; Xu, Yueqin

    2002-01-01

    A method of fabricating device quality, thin-film a-Si:H for use as semiconductor material in photovoltaic and other devices, comprising in any order; positioning a substrate in a vacuum chamber adjacent a plurality of heatable filaments with a spacing distance L between the substrate and the filaments; heating the filaments to a temperature that is high enough to obtain complete decomposition of silicohydride molecules that impinge said filaments into Si and H atomic species; providing a flow of silicohydride gas, or a mixture of silicohydride gas containing Si and H, in said vacuum chamber while maintaining a pressure P of said gas in said chamber, which, in combination with said spacing distance L, provides a P.times.L product in a range of 10-300 mT-cm to ensure that most of the Si atomic species react with silicohydride molecules in the gas before reaching the substrate, to thereby grow a a-Si:H film at a rate of at least 50 .ANG./sec.; and maintaining the substrate at a temperature that balances out-diffusion of H from the growing a-Si:H film with time needed for radical species containing Si and H to migrate to preferred bonding sites.

  20. High efficiency low cost thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    1999-01-01

    A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

  1. High efficiency, low cost, thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    2001-01-01

    A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

  2. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  3. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  4. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  5. Silicon nitride/silicon carbide composite powders

    DOE Patents [OSTI]

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  6. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  7. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  8. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  9. Effect of magnetic fields on the Kondo insulator CeRhSb: Magnetoresistance and high-field heat capacity measurements

    SciTech Connect (OSTI)

    Malik, S.K.; Menon, L.; Pecharsky, V.K.; Gschneidner, K.A. Jr.

    1997-05-01

    The compound CeRhSb is a mixed valent Ce-based compound which shows a gap in the electronic density of states at low temperatures. The gap manifests by a rise in electrical resistivity{emdash}below about 8 K from which the gap energy is estimated to be about 4 K. We have carried out heat capacity measurements on this compound in various applied fields up to 9.85 T. The magnetic contribution to the heat capacity, {Delta}C, is found to have a maximum in {Delta}C/T vs T at 10 K, below which {Delta}C/T is linear with T. This is attributed to the fact that below this temperature, in the gapped state, the electronic density of states decreases linearly with decreasing temperature. On application of a magnetic field, the electronic specific heat coefficient {gamma} in the gapped state increases by {approximately}4mJ/molK{sup 2}. The maximum in {Delta}C/T vs T is observed in all fields, which shifts to lower temperatures {approximately}1K at 5.32 T and raises again at 9.85 T to about the same values as at H=0T. This suggests that the gap exists for all fields up to 9.85 T. Above 10 K, in the mixed-valent state, {Delta}C/T vs T decreases with increasing temperature in zero field. There is hardly any effect of application of field in the mixed-valent state. We have also carried out magnetoresistance measurements on CeRhSb up to fields of 5.5 T at 2, 4.5, 10, 20, and 30 K. The magnetoresistance in CeRhSb is positive at temperatures of 4.5 K and above, in applied fields up to 5.5 T. At 5.5 T, the magnetoresistance is maximum at 4.5 K (6{percent}) and decreases with increasing temperature. The observation of the maximum is consistent with the observation of a maximum in {Delta}C/T vs T and is due to a change in the density of states. At a temperature of 2 K, a negative magnetoresistance is observed for magnetic fields greater than {approximately}3.5T which suggests reduction in the gap. {copyright} {ital 1997} {ital The American Physical Society}

  10. Ambient to high-temperature fracture toughness and cyclic fatigue behavior in Al-containing silicon carbide ceramics

    SciTech Connect (OSTI)

    Yuan, R.; Kruzic, J.J.; Zhang, X.F.; De Jonghe, L.C.; Ritchie, R.O.

    2003-08-01

    A series of in situ toughened, A1, B and C containing, silicon carbide ceramics (ABC-SiC) has been examined with A1 contents varying from 3 to 7 wt percent. With increasing A1 additions, the grain morphology in the as-processed microstructures varied from elongated to bimodal to equiaxed, with a change in the nature of the grain-boundary film from amorphous to partially crystalline to fully crystalline.