National Library of Energy BETA

Sample records for hg cn ga

  1. Cn

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclearDNP 20082 P r o jJ. linn SpaceClustera LustreCn

  2. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  3. Meson Production Comparison between HG and GA at 8 GeV

    E-Print Network [OSTI]

    McDonald, Kirk

    optimization (0.5cm/67mrad/33 mrad) 57340 (Pos) 60791 (Neg) 118131 (Sum) 46414 (Pos) 48830 (Neg) 95244 (Sum) Meson Production after optimization 61255 (Pos) 66996 (Neg) 128351 (Sum) (16.6% higher than GA case) 54129 (Pos) 55958 (Neg) 110087 (Sum) 53253 (Pos) 54091 (Neg) 107343 (Sum) #12;Meson Production

  4. SF6432-CN Construction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    under the tab titled "Forms" or obtained from the Control : SF 6432-CN Title: Standard Terms and Conditions for Firm-Fixed Price Commercial Construction Contracts Owner:...

  5. SF6432-CN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II) byMultidayAlumni > The EnergyRyanPhysics6/14/114/2015)CN (04/2015)

  6. SF6432-CN Construction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II) byMultidayAlumni > The EnergyRyanPhysics6/14/114/2015)CN7/31/13 Page 1

  7. Reactions of the CN Radical with Benzene and Toluene: Product Detection and Low-Temperature Kinetics

    E-Print Network [OSTI]

    Trevitt, Adam J.

    2010-01-01

    of the CN Radical with Benzene and Toluene: Productare measured for the CN + benzene and CN + toluene reactionsdetection. The CN + benzene reaction rate coefficient at

  8. The new barium zinc mercurides Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} - Synthesis, crystal and electronic structure

    SciTech Connect (OSTI)

    Schwarz, Michael; Wendorff, Marco; Roehr, Caroline

    2012-12-15

    The title compounds Ba{sub 3}ZnHg{sub 10} and BaZn{sub 0.6}Hg{sub 3.4} were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures, which both represent new structure types, have been determined using single crystal X-ray data. The structure of Ba{sub 3}ZnHg{sub 10} (orthorhombic, oP28, space group Pmmn, a=701.2(3), b=1706.9(8), c=627.3(3)pm, Z=2, R1=0.0657) contains folded 4{sup 4} Hg nets, where the meshes form the bases of flat rectangular pyramids resembling the structure of BaAl{sub 4}. The flat pyramids are connected via Hg-Zn/Hg bonds, leaving large channels at the folds, in which Ba(1) and Hg(2) atoms alternate. Whereas the remaining Hg/Zn atoms form a covalent 3D network of three- to five-bonded atoms with short M-M distances (273-301 pm; CN 9-11), the Hg(2) atoms in the channels adopt a comparatively large coordination number of 12 and increased distances (317-348 pm) to their Zn/Hg neighbours. In the structure of BaZn{sub 0.6}Hg{sub 3.4} (cubic, cI320, space group I4{sup Macron }3d, a=2025.50(7) pm, Z=64, R1=0.0440), with a chemical composition not much different from that of Ba{sub 3}ZnHg{sub 10}, the Zn/Hg atoms of the mixed positions M(1/2) are arranged in an slightly distorted primitive cubic lattice with a 4 Multiplication-Sign 4 Multiplication-Sign 4 subcell relation to the unit cell. The 24 of the originating 64 cubes contain planar cis tetramers Hg(5,6){sub 4} with Hg in a nearly trigonal planar or tetrahedral coordination. In another 24 of the small cubes, two opposing faces are decorated by Hg(3,4){sub 2} dumbbells, two by Ba(2) atoms respectively. The third type of small cubes are centered by Ba(1) atoms only. The complex 3D polyanionic Hg/Zn network thus formed is compared with the Hg partial structure in Rb{sub 3}Hg{sub 20} applying a group-subgroup relation. Despite their different overall structures, the connectivity of the negatively charged Hg atoms, the rather metallic Zn bonding characteristic (as obtained from FP-LAPW band structure calculations) and the coordination number of 16 for all Ba cations relate the two title compounds. - Graphical abstract: Six of the 64 small sub-cubes of three types (A, B, C) forming the unit cell of the Hg-rich mercuride BaZn{sub 0.6}Hg{sub 3.4}. Highlights: Black-Right-Pointing-Pointer Two new Hg-rich Ba mercurides, both synthesized from the elements in pure phase. Black-Right-Pointing-Pointer BaZn{sub 0.6}HgG{sub 3.4} and Ba{sub 3}ZnHg{sub 10} with new complex structure types. Black-Right-Pointing-Pointer Structure relation to other complex cubic intermetallics. Black-Right-Pointing-Pointer Discussion of covalent and metallic bonding aspects, as found by the structure features and band structure calculations.

  9. Hg System Assembly and Testing Status

    E-Print Network [OSTI]

    McDonald, Kirk

    ;4VRVS Meeting 8 Nov 2006 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Hydraulic Hose Issue #12;2VRVS Meeting 8 Nov 2006 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Hg Drain & Spill Meeting 8 Nov 2006 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Local Hg Vapor Filters · Hg

  10. Mathematical Model Analysis for Hg Flow

    E-Print Network [OSTI]

    McDonald, Kirk

    Mathematical Model Analysis for Hg Flow Yan Zhan SUNYSB April 20th, 2010 #12;Outline · Introduction ­ Mechanism of Jet Breakup & Atomization ­ Dynamic Problems in Hg Target Flow · Mathematical Model for Hg Flow ­ Parameters ­ Incompressible Flow (No MHD) ­ Incompressible Flow (MHD) ­ Proton Beam Energy Conversion

  11. IDS120j WITHOUT RESISTIVE MAGNETS MODIFYING Hg MODULE ( NEW SH#1 REGION + Hg POOL LENGTH)

    E-Print Network [OSTI]

    McDonald, Kirk

    IDS120j WITHOUT RESISTIVE MAGNETS MODIFYING Hg MODULE ( NEW SH#1 REGION + Hg POOL LENGTH) Nicholas CRYO#1 WAS DECIDED DURING THE LAST MEETING AND AN EXTENSION OF THE Hg POOL UPSTREAM UP TO ~ - 100 cm FROM SIMULATIONS WITH MODIFIED Hg POOL AND SH#1 REGION

  12. High Power Hg Target Conceptual Design Review

    E-Print Network [OSTI]

    McDonald, Kirk

    OF ENERGY Conceptual Design Review 7-8 Feb 05 Pump Issues · Pump adds heat to Hg - Pump delivers nominal 51 to pump heating only · Max available pump output pressure is 750 psi (50 bar) - Estimated piping system Review 7-8 Feb 05 Pump Energy Balance Pump Heat Direct to Tunnel Heat Input to Hg Flow Losses Energy

  13. The circumstellar shell of the post-AGB star HD 56126: the $^{12}$CN/$^{13}$CN isotope ratio and fractionation

    E-Print Network [OSTI]

    Eric J. Bakker; David L. Lambert

    1997-11-15

    We have detected circumstellar absorption lines of the $^{12}$CN and $^{13}$CN Violet and Red System in the spectrum of the post-AGB star HD~56126. From a synthetic spectrum analysis, we derive a Doppler broadening parameter of $b=0.51\\pm0.04$ km~s$^{-1}$, $^{12}$CN/$^{13}$CN$=38\\pm2$, and a lower limit of $2000$ on $^{12}$CN/$^{14}$CN and $^{12}$C$^{14}$N/$^{12}$C$^{15}$N. A simple chemical model has been computed of the circumstellar shell surrounding HD~56126 that takes into account the gas-phase ion-molecule reaction between CN and C$^{+}$. From this we infer that this reaction leads to isotopic fractionation of CN. Taking into account the isotopic exchange reaction and the observed $^{12}$CN/$^{13}$CN we find $^{12}$C/$^{13}$C$\\sim 67$ (for $T_{\\rm kin}=25$ K). Our analysis suggests that $^{12}$CN has a somewhat higher rotational temperature than $^{13}$CN: $T_{\\rm rot}=11.5\\pm0.6$ and $8.0\\pm0.6$ K respectively. We identify possible causes for this difference in excitation temperature, among which the $N''$ dependence of the isotopic exchange reaction.

  14. CN Solar Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine:Kansas: Energy Resources JumpCIA-The World FactbookCN Solar Co Ltd

  15. Infrared spectra of ClCN{sup +}, ClNC{sup +}, and BrCN{sup +} trapped in solid neon

    SciTech Connect (OSTI)

    Jacox, Marilyn E.; Thompson, Warren E. [Optical Technology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8441 (United States)

    2007-06-28

    When a mixture of ClCN or BrCN with a large excess of neon is codeposited at 4.3 K with a beam of neon atoms that have been excited in a microwave discharge, the infrared spectrum of the resulting solid includes prominent absorptions of the uncharged isocyanide, ClNC or BrNC, and of the corresponding cation, ClCN{sup +} or BrCN{sup +}. The NC-stretching fundamentals of the isocyanides trapped in solid neon lie close to the positions for their previously reported argon-matrix counterparts. The CN-stretching absorptions of ClCN{sup +} and BrCN{sup +} and the CCl-stretching absorption of ClCN{sup +} appear very close to the gas-phase band centers. Absorptions of two overtones and one combination band of ClCN{sup +} are identified. Reversible photoisomerization of ClCN{sup +} to ClNC{sup +} occurs. The two stretching vibrational fundamentals and several infrared and near infrared absorptions associated with electronic transitions of ClNC{sup +} are observed. Minor infrared peaks are attributed to the vibrational fundamental absorptions of the CX and CX{sup +} species (X=Cl,Br)

  16. The role of plants in the Hg biogeochemical cycle

    E-Print Network [OSTI]

    Nowak, Robert S.

    Biogeochemical Cycle Hg0RGM Hgp Sources Natural: · Soils G th l A ti Z Anthropogenic: · Coal fired power plants W Cycle Hg0RGM Hgp Factors that control Hg release from soils ­ Light TemperatureTemperature Precipitation ­ Anthropogenic emission sources and secondary formation by id ti f H 0oxidation of Hg0 · Particulate mercury (Hgp

  17. Photooxidation of Hg(0) in Artificial and Natural Waters

    E-Print Network [OSTI]

    Morel, François M. M.

    artificial and natural waters irradiated with a UV-B lamp. No change in Hg speciation was observed in dark waters could represent a net balance between Hg(II) photoreduction and Hg(0) photooxidation oxidized in the dark (7, 8). But it is not known iftheseresultsobtainedwithliquiddropsofHg(0)arerelevant

  18. Magnetic fields of HgMn stars

    E-Print Network [OSTI]

    Hubrig, S; Ilyin, I; Korhonen, H; Schoeller, M; Savanov, I; Arlt, R; Castelli, F; Curto, G Lo; Briquet, M; Dall, T H

    2012-01-01

    The frequent presence of weak magnetic fields on the surface of spotted late-B stars with HgMn peculiarity in binary systems has been controversial during the two last decades. We re-analyse available spectropolarimetric material by applying the moment technique on spectral lines of inhomogeneously distributed elements separately. Furthermore, we present new determinations of the mean longitudinal magnetic field for the HgMn star HD65949 and the hotter analog of HgMn stars, the PGa star HD19400, using FORS2 installed at the VLT. We also give new measurements of the eclipsing system AR Aur with a primary star of HgMn peculiarity which were obtained with the SOFIN spectropolarimeter installed at the Nordic Optical Telescope. We downloaded from the ESO archive the publically available HARPS spectra for eight HgMn stars and one normal and one superficially normal B-type star obtained in 2010. The application of the moment technique to the HARPS and SOFIN spectra allowed us to study the presence of the longitudina...

  19. Semiconductor Fundamentals tlu@math.pku.edu.cn

    E-Print Network [OSTI]

    Lu, Tiao

    physics to solid materials. More specifically, we are interested in semiconductor crystals. Crystals. Such a structure yields a periodic potential throughout the material. #12;Introduction Two properties of crystalsSemiconductor Fundamentals tlu@math.pku.edu.cn :http://dsec.pku.edu.cn/~tlu :http

  20. Hg System Status V.B. Graves

    E-Print Network [OSTI]

    McDonald, Kirk

    LABORATORY U. S. DEPARTMENT OF ENERGY HPU Setup · Hydraulic fluid fill and drain process developed using Friday Meeting4 Aug 2006 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Syringe Pump at ORNL · Hydraulic power unit (HPU) and syringe cylinders delivered to ORNL July 21 - Hg cylinder discharge piping

  1. Hg System Assembly and Testing Status

    E-Print Network [OSTI]

    McDonald, Kirk

    U. S. DEPARTMENT OF ENERGY Hydraulic Hose Issue Corrected · Replaced flex hoses with rigid tubing #12;2VRVS Meeting 22 Nov 2006 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Hg System baseplate #12;3VRVS Meeting 22 Nov 2006 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Basic

  2. Safety Issues for Hg irradiation Experiment siting -

    E-Print Network [OSTI]

    McDonald, Kirk

    1 SC/RP Safety Issues for Hg irradiation Experiment siting - Activation of air and components water retention Activation of air by 40 pulses of 2E13 p corresponds to approx. 1 yr of operation in EHN1. Lack of beam dump leads to unnecessary activation of components and aggravates air activation #12

  3. Hg Anomalies In Soils- A Geochemical Exploration Method For Geothermal...

    Open Energy Info (EERE)

    Hg Anomalies In Soils- A Geochemical Exploration Method For Geothermal Areas Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: Hg Anomalies In...

  4. IDS120j WITHOUT RESISTIVE MAGNETS MODIFYING Hg MODULE ( UPDATED )

    E-Print Network [OSTI]

    McDonald, Kirk

    Hg POOL. *********************************************************** >SIMULATIONS CODE: mars1512 OVERVIEW (LEFT), POOL REGION DETAILS (RIGHT). [20 cm GAPS] SH#1 SH#1 SH#1A SH#2 SH#1A Hg POOL SH#4 SH#3 Hg POOL SH#1 2 cm THICK STST OUTER TUBE CRYO#1 CRYO#4CRYO#3 CRYO#2 2 cm THICK STST BEAM PIPE BEAM PIPE

  5. Metal-Semiconductor junctions tlu@math.pku.edu.cn

    E-Print Network [OSTI]

    Lu, Tiao

    of Ec and Ev and also changes EFi n=ni e -q F - kT , p=ni e q F- kT n-p 2ni = e -F1 Metal-Semiconductor junctions tlu@math.pku.edu.cn homepage: dsec.pku.edu.cn/~tlu blog: http://hi.baidu.com/motioo #12;2 - Many of the properties of pn junctions can be realized by forming an appropriate metal

  6. Atmospheric mercury (Hg) in the Adirondacks: Concentrations and sources

    SciTech Connect (OSTI)

    Hyun-Deok Choi; Thomas M. Holsen; Philip K. Hopke

    2008-08-15

    Hourly averaged gaseous elemental Hg (GEM) concentrations and hourly integrated reactive gaseous Hg (RGM), and particulate Hg (HgP) concentrations in the ambient air were measured at Huntington Forest in the Adirondacks, New York from June 2006 to May 2007. The average concentrations of GEM, RGM, and HgP were 1.4 {+-} 0.4 ng m{sup -3}, 1.8 {+-} 2.2 pg m{sup -3}, and 3.2 {+-} 3.7 pg m{sup -3}, respectively. RGM represents <3.5% of total atmospheric Hg or total gaseous Hg (TGM: GEM + RGM) and HgP represents <3.0% of the total atmospheric Hg. The highest mean concentrations of GEM, RGM, and HgP were measured during winter and summer whereas the lowest mean concentrations were measured during spring and fall. Significant diurnal patterns were apparent in warm seasons for all species whereas diurnal patterns were weak in cold seasons. RGM was better correlated with ozone concentration and temperature in both warm than the other species. Potential source contribution function (PSCF) analysis was applied to identify possible Hg sources. This method identified areas in Pennsylvania, West Virginia, Ohio, Kentucky, Texas, Indiana, and Missouri, which coincided well with sources reported in a 2002 U.S. mercury emissions inventory. 51 refs., 7 figs., 1 tab.

  7. Process of [sup 196]Hg enrichment

    DOE Patents [OSTI]

    Grossman, M.W.; Mellor, C.E.

    1993-04-27

    A simple rate equation model shows that by increasing the length of the photochemical reactor and/or by increasing the photon intensity in said reactor, the feedstock utilization of [sup 196]Hg will be increased. Two preferred embodiments of the present invention are described, namely (1) long reactors using long photochemical lamps and vapor filters; and (2) quartz reactors with external UV reflecting films. These embodiments have each been constructed and operated, demonstrating the enhanced utilization process dictated by the mathematical model (also provided).

  8. Process of .sup.196 Hg enrichment

    DOE Patents [OSTI]

    Grossman, Mark W. (Belmont, MA); Mellor, Charles E. (Salem, MA)

    1993-01-01

    A simple rate equation model shows that by increasing the length of the photochemical reactor and/or by increasing the photon intensity in said reactor, the feedstock utilization of .sup.196 Hg will be increased. Two preferred embodiments of the present invention are described, namely (1) long reactors using long photochemical lamps and vapor filters; and (2) quartz reactors with external UV reflecting films. These embodiments have each been constructed and operated, demonstrating the enhanced utilization process dictated by the mathematical model (also provided).

  9. IDS120j WITHOUT RESISTIVE MAGNETS MODIFYING Hg MODULE

    E-Print Network [OSTI]

    McDonald, Kirk

    OVERVIEW (LEFT), POOL REGION DETAILS (RIGHT). [20 cm GAPS] SH#1 SH#1 SH#1A SH#2 SH#1A Hg POOL SH#4 SH#3 Hg POOL SH#1 2 cm THICK STST OUTER TUBE CRYO#1 CRYO#4CRYO#3 CRYO#2 2 cm THICK STST BEAM PIPE BEAM PIPE EXTENDS HALF WAY UPSTREAM TO THE POOL SH#1 10 cm THICK STST RIGHT FLANGE Hg POOL STARTS ~ 85 cm

  10. U01HG004279 (D.M.M.), U01HG004261 (E.L.), U01HG004274 (S.H.), and U41HG004269 (L.S.). Awards

    E-Print Network [OSTI]

    .T.N.), the Indiana Genomics Initiative (T.C.K.), H. Smith and the NIDDK genomics core laboratory (B.O.), NIH R01HG

  11. CN/2011/SC/IHP/PI/2 Sediment Issues & Sediment

    E-Print Network [OSTI]

    Julien, Pierre Y.

    CN/2011/SC/IHP/PI/2 #12;Sediment Issues & Sediment Management in Large River Basins Interim Case Study Synthesis Report International Sediment Initiative Technical Documents in Hydrology UNESCO Office Sediment Initiative Core Group - Members: o Prof. Desmond Walling o Prof. Manfred Spreafico o Prof. Hu

  12. C-DBLPhttp://www.cdblp.cn Web 2008 10 863

    E-Print Network [OSTI]

    C-DBLP: C-DBLPhttp://www.cdblp.cn Web 2008 10 863 "" 2007AA01Z155 Web C-DBLP Community Academic Community Information Management DBLP Computer Science Bibliography DBLP WAMDM 2000 Web Web Web DBLP 2008 WAMDM Web 11 NDBC2000 2008 5 C-DBLP 2008 10 C-DBLP 1 1 C

  13. lingyy@ruc.edu.cn Web Web Web

    E-Print Network [OSTI]

    DEEP WEB 100872 lingyy@ruc.edu.cn Web Web Web Deep Web Deep Web Deep Web; Web TP391 Entity Identification for Deep Web Data Integration Ling Yan-Yan, Liu Wei, Wang Zhong-Yuan, Ai Nowadays, growing number of Web Databases emerge from the web with their contents duplicated. Two or more

  14. CERN Hg Jet System V.B. Graves

    E-Print Network [OSTI]

    McDonald, Kirk

    Delivery System Pump Motor Centrifugal Pump Hg Jet Containment Sump Tank Secondary Containment Target Pump Issues · Pump adds heat to Hg - Pump delivers nominal 51 bhp at 23% efficiency (60 bhp max (30kw) · With an assumed Vol=12liter, T=2.4°F/sec (1.3°C/sec) due to pump heating only · Heat

  15. Growth of superconducting Hg-1212 very-thin films

    E-Print Network [OSTI]

    Wu, Judy; Xie, Y. Y.; Kang, B. W.; Gapud, A. A.; Aytug, T.; Fang, L.

    1999-06-01

    High quality epitaxial HgBa2CaCu2O6+delta (Hg- High 1212) films with thickness less than 100 nm have been successfully synthesized using cation-exchange process. The films show the superconducting transition up to similar to 118 K which is close...

  16. MERIT Hg System Review V.B. Graves

    E-Print Network [OSTI]

    McDonald, Kirk

    in rough vacuum · Full-beam interaction length is 30-cm · Beam line is 120cm above the tunnel floor · Up between the Hg and the tunnel environment · Hydraulic pump will be in adjacent tunnel, personnel in remote/vapor containment - Ports for instruments, Hg fill/drain, hydraulics · Optical diagnostic components - Passive

  17. IAEA-CN-60/F-II-6 Requirements and Design Envelope for Volumetric Neutron

    E-Print Network [OSTI]

    Tillack, Mark

    IAEA-CN-60/F-II-6 Requirements and Design Envelope for Volumetric Neutron Source Fusion Facilities Scientific Research Institute, RF #12;IAEA-CN-60/F-II-6 Requirements and Design Envelope for Volumetric

  18. Elucidate the mechanism(s) of Hg uptake in methylating bacteria and effects on Hg methylation in nature.

    E-Print Network [OSTI]

    Post, Wilfred M.

    Objective · Elucidate the mechanism(s) of Hg uptake in methylating bacteria and effects on Hg, suggesting a possible detoxification mechanism for the formation and export of methylmercury. 1 BER Overview A New Mechanism of Mercury Uptake and Methylation in Anaerobic Bacteria Contact: Jeffra Schaefer

  19. Abundance analysis of SB2 binary stars with HgMn primaries

    E-Print Network [OSTI]

    T. Ryabchikova

    1998-05-06

    We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

  20. trans-K3[TcO2(CN)4

    SciTech Connect (OSTI)

    Chatterjee, Sayandev; Del Negro, Andrew S.; Edwards, Matthew K.; Twamley, Brendan; Krause, Jeanette A.; Bryan, Samuel A.

    2010-07-14

    The dioxotetracyanotechnetate anion, [TcO2(CN)4]3-, of the title complex has octahedral symmetry. The technetium is located on a center of inversion and is bound by two oxygen atoms and four cyano ligands. The Tc?O bond distance of 1.7721 (12) Å is consistent with double bond character. The potassium cations [located on special (1/2,0,1) and general positions] reside in octahedral or tetrahedral environments; interionic K···O and K···N interactions occur in the 2.7877 (19)-2.8598 (15) Å range.

  1. SF6432-CN (02-02-12) Construction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II) byMultidayAlumni > The EnergyRyanPhysics6/14/114/2015)CN

  2. Purification of HgI.sub.2 for nuclear detector fabrication

    DOE Patents [OSTI]

    Schieber, Michael M. (Goleta, CA)

    1978-01-01

    A process for purification of mercuric iodide (HgI.sub.2) to be used as a source material for the growth of detector quality crystals. The high purity HgI.sub.2 raw material is produced by a combination of three stages: synthesis of HgI.sub.2 from Hg and I.sub.2, repeated sublimation, and zone refining.

  3. Spectroscopic variability and magnetic fields of HgMn stars

    E-Print Network [OSTI]

    Hubrig, S; Ilyin, I; Korhonen, H; Savanov, I S; Dall, T; Schoeller, M; Cowley, C R; Briquet, M; Arlt, R

    2011-01-01

    The discovery of exotic abundances, chemical inhomogeneities, and weak magnetic fields on the surface of late B-type primaries in spectroscopic binaries has important implications not only for our understanding of the formation mechanisms of stars with Hg and Mn peculiarities themselves, but also for the general understanding of B-type star formation in binary systems. The origin of the abundance anomalies observed in late B-type stars with HgMn peculiarity is still poorly understood. The connection between HgMn peculiarity and membership in binary and multiple systems is supported by our observations during the last decade. The important result achieved in our studies of a large sample of HgMn stars is the finding that most HgMn stars exhibit spectral variability of various chemical elements, proving that the presence of an inhomogeneous distribution on the surface of these stars is a rather common characteristic and not a rare phenomenon. Further, in the studied systems, we found that all components are che...

  4. Active transport, substrate specificity, and methylation of Hg(II) in anaerobic bacteria

    SciTech Connect (OSTI)

    Schasfer, Jeffra [Princeton University; Rocks, Sara [Princeton University; Zheng, Wang [ORNL; Liang, Liyuan [ORNL; Gu, Baohua [ORNL; Morel, Francois M [ORNL

    2011-01-01

    The formation of methylmercury (MeHg), which is biomagnified in aquatic food chains and poses a risk to human health, is effected by some iron- and sulfate-reducing bacteria (FeRB and SRB) in anaerobic environments. However, very little is known regarding the mechanism of uptake of inorganic Hg by these organisms, in part because of the inherent difficulty in measuring the intracellular Hg concentration. By using the FeRB Geobacter sulfurreducens and the SRB Desulfovibrio desulfuricans ND132 as model organisms, we demonstrate that Hg(II) uptake occurs by active transport. We also establish that Hg(II) uptake by G. sulfurreducens is highly dependent on the characteristics of the thiols that bind Hg(II) in the external medium, with some thiols promoting uptake and methylation and others inhibiting both. The Hg(II) uptake system of D. desulfuricans has a higher affinity than that of G. sulfurreducens and promotes Hg methylation in the presence of stronger complexing thiols. We observed a tight coupling between Hg methylation and MeHg export from the cell, suggesting that these two processes may serve to avoid the build up and toxicity of cellular Hg. Our results bring up the question of whether cellular Hg uptake is specific for Hg(II) or accidental, occurring via some essential metal importer. Our data also point at Hg(II) complexation by thiols as an important factor controlling Hg methylation in anaerobic environments.

  5. HgMn Stars as apparent X-ray emitters

    E-Print Network [OSTI]

    Hubrig, S; Mathys, G

    1998-01-01

    In the ROSAT all-sky survey 11 HgMn stars were detected as soft X-ray emitters (Berghoefer, Schmitt & Cassinelli 1996). Prior to ROSAT, X-ray observations with the Einstein Observatory had suggested that stars in the spectral range B5-A7 are devoid of X-ray emission. Since there is no X-ray emitting mechanism available for these stars (also not for HgMn stars), the usual argument in the case of an X-ray detected star of this spectral type is the existence of an unseen low-mass companion which is responsible for the X-ray emission. The purpose of the present work is to use all available data for our sample of X-ray detected HgMn stars and conclude on the nature of possible companions.

  6. ) = {V0 V1 Vn | Vi Cn dimC Vi = i}

    E-Print Network [OSTI]

    Ishikawa, Masaharu

    (Cn ) T X Fl(Cn ) n Sn w Cw X X Cw X X Cw X Xw Xw [Xw] X H (X; Z) = wSn Z[Xw] [Xu][Xv] = wSn cw uv[Xw] cw uv

  7. Experimental study of 199Hg spin anti-relaxation coatings

    E-Print Network [OSTI]

    Z. Chowdhuri; M. Fertl; M. Horras; K. Kirch; J. Krempel; B. Lauss; A. Mtchedlishvili; D. Rebreyend; S. Roccia; P. Schmidt-Wellenburg; G. Zsigmond

    2013-09-04

    We report on a comparison of spin relaxation rates in a $^{199}$Hg magnetometer using different wall coatings. A compact mercury magnetometer was built for this purpose. Glass cells coated with fluorinated materials show longer spin coherence times than if coated with their hydrogenated homologues. The longest spin relaxation time of the mercury vapor was measured with a fluorinated paraffin wall coating.

  8. The new Hg-rich barium indium mercurides BaIn{sub x}Hg{sub 7?x} (x=3.1) and BaIn{sub x}Hg{sub 11?x} (x=0–2.8)

    SciTech Connect (OSTI)

    Wendorff, Marco; Schwarz, Michael; Röhr, Caroline

    2013-07-15

    The title compounds BaIn{sub x}Hg{sub 7?x} (x=3.1(1)) and BaIn{sub x}Hg{sub 11?x} (x=0–2.8) were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures have been determined using single crystal X-ray data. BaIn{sub x}Hg{sub 7?x} (x=3.1(1)) crystallizes in a new structure type (orthorhombic, oC16, space group Cmmm: a=512.02(1), b=1227.68(3), c=668.61(2) pm, Z=2, R1=0.0311). In the structure, the atoms of the three crystallographically different mixed In/Hg positions form planar nets of four-, six- and eight-membered rings. These nets are shifted against each other such that the four-membered rings form empty distorted cubes. The cubes are connected via common edges, corners and folded ladders, which are also found in BaIn{sub 2}/BaHg{sub 2} (KHg{sub 2} structure type) and BaIn (?-NaHg type). The Ba atoms are centered in the eight-membered rings and exhibit an overall coordination number of 20. The [BaM{sub 20}] polyhedra and twice as many distorted [M{sub 8}] cubes tesselate the space. BaIn{sub 2.8}Hg{sub 8.2} (cubic, cP36, space group Pm3{sup ¯}m, a=961.83(1) pm, Z=3, R1=0.0243) is the border compound of the phase width BaIn{sub x}Hg{sub 11?x} of the rare BaHg{sub 11} structure type. In the structure, ideal [M{sub 8}] cubes (at the corners of the unit cell) and BaM{sub 20} polyhedra (at the edges of the unit cell) represent the building blocks comparable to the other new In mercuride. In accordance with the increased In/Hg content, additional M-pure regions appear: the center of the unit cell contains a huge [Hg(1)M(2){sub 12}M(3,4){sub 32}] polyhedron, a Hg-centered cuboctahedron of In/Hg atoms surrounded by a capped cantellated cube of 32 additional M atoms. For both structure types, the bonding situation and the ‘coloring’, i.e. the In/Hg distribution of the polyanionic network, are discussed considering the different sizes of the atoms and the charge distribution (Bader AIM charges), which have been calculated within the framework of FP-LAPW density functional theory. - Graphical abstract: BaIn{sub 2.6}Hg{sub 4.4}: distorted cubes [(In/Hg){sub 8}] (green, like in BaHg{sub 11}), folded ladders (violet, like in BaIn, BaHg{sub 2} and BaIn{sub 2}) and Ba coordination polyhedra [Ba(In/Hg){sub 20}] (blue, like in BaHg{sub 11}). - Highlights: • The Hg-rich In-mercuride BaIn{sub 3.1}Hg{sub 3.9} crystallizes with a singular structure type. • The phase width of the BaHg{sub 11} structure in BaIn{sub x}Hg{sub 11-x} ends at x=2.8. • The relations of both compounds with other alkaline-earth mercurides are outlined. • The Hg/In coloring of the polyanion is discussed considering the structure features. • Bonding aspects are explored using band structure calculations.

  9. IDS120hm GEOMETRY WITH MODIFIED Hg POOL VESSEL SIMULATIONS FOR 60% W + 40% He SHIELDING WITHOUT/WITH

    E-Print Network [OSTI]

    McDonald, Kirk

    IDS120hm GEOMETRY WITH MODIFIED Hg POOL VESSEL SIMULATIONS FOR 60% W + 40% He SHIELDING WITHOUT: (m IS FOR) modified Hg pool vessel IN IDS120h. # WITHOUT AND WITH Hg IN THE POOL SIMULATIONS Hg POOL VESSEL AND SHIFTED Be WIDOW FROM 600 cm (0.6 cm THICK) TO 300 cm (1 cm THICK). MODIFIED Hg

  10. nTOF11 Hg System Design Tony Gabriel, Phil Spampinato

    E-Print Network [OSTI]

    McDonald, Kirk

    delivery system size reduction - Target cart design optimization - Magnet base support #12;6 OAK RIDGE of Hg system using jackbolts · Hg system fixed to top plate, final position locked using nut/bolt #12

  11. Expanded Prussian Blue Analogues Incorporating [Re6Se8(CN)6]3-/4-Clusters: Adjusting Porosity via Charge Balance

    E-Print Network [OSTI]

    Shores, Matthew P.

    Expanded Prussian Blue Analogues Incorporating [Re6Se8(CN)6]3-/4- Clusters: Adjusting Porosity via of octahedral [M(CN)6]3-/4- complexes for the synthesis of microporous Prussian blue type solids with adjustable to be a direct expansion of Prussian blue (Fe4[Fe(CN)6]3,14H2O), with [Re6Se8(CN)6]4- clusters connected through

  12. Electronic Absorption Spectra of the Protonated Polyacetylenes H2CnH+ (n ) 4, 6, 8) in Neon Matrixes

    E-Print Network [OSTI]

    Maier, John Paul

    leading to production of linear carbon chain radicals CnH and cumulenes H2Cn are polyacetylene cations with helium in an 1:3 ratio. The exit aperture of the ion source was reduced in order to increase the inner pressure and enhance production of larger CnHk + (n > 4) cations. Experimental conditions (e.g., pressure

  13. IDS120j WITHOUT RESISTIVE MAGNETS INTRODUCING A DOUBLE WALL Hg POOL VESSSELAND Be WINDOW.

    E-Print Network [OSTI]

    McDonald, Kirk

    IDS120j WITHOUT RESISTIVE MAGNETS INTRODUCING A DOUBLE WALL Hg POOL VESSSELAND Be WINDOW. SC#4 STUDIES FOR 20 cm GAPS SIZE FOR STST IN THE PLACE OF RESISTIVE MAGNETS AND REST OF VOLUME IN Hg POOL SHIELDING IN THE PLACE OF RESISTIVE MAGNETS AND IN THE REST OF VOLUME IN THE Hg POOL VESSEL

  14. Anthropogenic and Natural Emissions of Mercury (Hg) in the northeastern United Jeffrey MacAdam Sigler

    E-Print Network [OSTI]

    Lee, Xuhui

    Abstract Anthropogenic and Natural Emissions of Mercury (Hg) in the northeastern United States impact may depend on the emission rate. Anthropogenic Hg emissions in the United States are poorly characterized. Natural Hg emissions are poorly understood worldwide, due to lack of data or measurement systems

  15. A Free Jet Hg Target Operating in a High Magnetic Field Intersecting

    E-Print Network [OSTI]

    McDonald, Kirk

    , 2005) Sect. A-A Hg Supply Tube Nozzle Solenoid Bore A A Fiber Optic Bundle Hydraulic Fluid Lines Vacuum · Hydraulically-actuated piston pump delivers Hg to the nozzle · Hg cylinder 25-cm (10-inch) bore, 38-cm (15-inch

  16. Synthesis and growth of HgI{sub 2} nanocrystals in a glass matrix: Heat treatment

    SciTech Connect (OSTI)

    Condeles, J. F. E-mail: ricssilva@yahoo.com.br; Silva, R. S. E-mail: ricssilva@yahoo.com.br; Silva, A. C. A.; Dantas, N. O.

    2014-08-14

    Mercury iodide (HgI{sub 2}) nanocrystals (NCs) were successfully grown in a barium phosphate glass matrix synthesized by fusion. Growth control of HgI{sub 2} NCs was investigated by Atomic Force Microscopy (AFM), Optical Absorption (OA), Fluorescence (FL), and X-ray diffraction (XRD). AFM images reveal the formation of HgI{sub 2} nanocrystals in host glass matrix. HgI{sub 2} NCs growth was evidenced by an OA and FL band red-shift with increasing annealing time. XRD measurements revealed the ? crystalline phase of the HgI{sub 2} nanocrystals.

  17. A Multi-Ligand Based Pd Catalyst for C–N Cross-Coupling Reactions

    E-Print Network [OSTI]

    Fors, Brett P.

    An alternative approach to catalyst development, which led to a Pd catalyst based on two biarylphosphine ligands for C?N cross-coupling reactions, is reported. By effectively being able to take the form of multiple catalysts ...

  18. SSC v s . Hg at 0 -150,000 c fs SSC vs. Hg at 150,000 -370,000 cfs

    E-Print Network [OSTI]

    SSC v s . Hg at 0 - 150,000 c fs SSC vs. Hg at 150,000 - 370,000 cfs 0 20 40 60 80 0 20 40 60 80 0 (cfs) (Figure 1 ). The Bypass serves as flood protection for the City of Sacramento and conveys

  19. Apparatus for growing HgI.sub.2 crystals

    DOE Patents [OSTI]

    Schieber, Michael M. (Jerusalem, IL); Beinglass, Israel (Jerusalem, IL); Dishon, Giora (Jerusalem, IL)

    1978-01-01

    A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

  20. Reactions of the CN Radical with Benzene and Toluene: Product Detection and Low-Temperature Kinetics

    SciTech Connect (OSTI)

    Trevitt, Adam J.; Goulay, Fabien; Taatjes, Craig A.; Osborn, David L.; Leone, Stephen R.

    2009-12-23

    Low temperature rate coefficients are measured for the CN + benzene and CN + toluene reactions using the pulsed Laval nozzle expansion technique coupled with laser-induced fluorescence detection. The CN + benzene reaction rate coefficient at 105, 165 and 295 K is found to be relatively constant over this temperature range, 3.9 - 4.9 x 10-10 cm3 molecule-1 s-1. These rapid kinetics, along with the observed negligible temperature dependence, are consistent with a barrierless reaction entrance channel and reaction efficiencies approaching unity. The CN + toluene reaction is measured to have a slower rate coefficient of 1.3 x 10-10 cm3 molecule-1 s-1 at 105 K. At room temperature, non-exponential decay profiles are observed for this reaction that may suggest significant back-dissociation of intermediate complexes. In separate experiments, the products of these reactions are probed at room temperature using synchrotron VUV photoionization mass spectrometry. For CN + benzene, cyanobenzene (C6H5CN) is the only product recorded with no detectable evidence for a C6H5 + HCN product channel. In the case of CN + toluene, cyanotoluene (NCC6H4CH3) constitutes the only detected product. It is not possible to differentiate among the ortho, meta and para isomers of cyanotoluene because of their similar ionization energies and the ~;; 40 meV photon energy resolution of the experiment. There is no significant detection of benzyl radicals (C6H5CH2) that would suggest a H-abstraction or a HCN elimination channel is prominent at these conditions. As both reactions are measured to be rapid at 105 K, appearing to have barrierless entrance channels, it follows that they will proceed efficiently at the temperatures of Saturn?s moon Titan (~;;100 K) and are also likely to proceed at the temperature of interstellar clouds (10-20 K).

  1. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  2. MEASURED ENERGY PERFORMANCE OF ENERGY-EFFICIENT NEW COMMERCIAL BUILDINGS: RESULTS FROM THE BECA-CN DATA COMPILATION

    E-Print Network [OSTI]

    Piette, M.A.

    2010-01-01

    owners to share energy consumption data. In the future wecompare BECA-CN to energy consumption data for conventionalABSTRACT Measured energy consumption data have been compiled

  3. ISSN 1000-9825, CODEN RUXUEW E-mail: jos@iscas.ac.cn Journal of Software, Vol.19, No.2, February 2008, pp.179-193 http://www.jos.org.cn

    E-Print Network [OSTI]

    -10-62562563 © 2008 by Journal of Software. All rights reserved. Web , + , ( , 100872) A Graph-Based Approach for Web Database Sampling LIU Wei, MENG Xiao-Feng+ , LING Yan-Yan (School of Information, Renmin@ruc.edu.cn, http://idke.ruc.edu.cn/xfmeng/ Liu W, Meng XF, Ling YY. A graph-based approach for Web database

  4. Author's personal copy Wading bird guano contributes to Hg accumulation in tree island soils

    E-Print Network [OSTI]

    Ma, Lena

    . The mean Hg concentration in surface soils of ghost tree islands was low and similar to marsh soil. For live tree islands, Hg concentrations in the surface head region were considerably greater than those Everglades typically consists of head, middle and tail re- gions (Mason and Valk, 2002). The head is the most

  5. Nested reactor chamber and operation for Hg-196 isotope separation process

    DOE Patents [OSTI]

    Grossman, M.W.

    1991-10-08

    The present invention is directed to an apparatus for use in [sup 196]Hg separation and its method of operation. Specifically, the present invention is directed to a nested reactor chamber useful for [sup 196]Hg isotope separation reactions avoiding the photon starved condition commonly encountered in coaxial reactor systems. 6 figures.

  6. IDS120j WITHOUT RESISTIVE MAGNETS MODIFYING Hg MODULE ( NEW SH#1 REGION )

    E-Print Network [OSTI]

    McDonald, Kirk

    CRYO#1 WAS DECIDED DURING 11 / 15 / 2012 TARGET MEETING AND AN EXTENSION OF THE Hg POOL UPSTREAM UP cm. # RESULTS FROM SIMULATIONS WITH MODIFIED Hg POOL AND SH#1 REGION ( SC#1+2, SC#4 SEGMENTATION;IDS120j: GENERAL OVERVIEW (LEFT), POOL REGION DETAILS (RIGHT). [20 cm GAPS] SH#1 SH#1 SH#1A SH#2 SH#1A

  7. Disentangling the nuclear shape coexistence in even-even Hg isotopes using the interacting boson model

    E-Print Network [OSTI]

    J. E. García-Ramos; K. Heyde

    2014-10-10

    We intend to provide a consistent description of the even-even Hg isotopes, 172-200Hg, using the interacting boson model including configuration mixing. We pay special attention to the description of the shape of the nuclei and to its connection with the shape coexistence phenomenon.

  8. INELASTIC NEUTRON SCATTERING SELECTION RULES OF 03B1 HgI2 M. SIESKIND

    E-Print Network [OSTI]

    Boyer, Edmond

    899 INELASTIC NEUTRON SCATTERING SELECTION RULES OF 03B1 HgI2 M. SIESKIND Laboratoire de The inelastic neutron scattering selection rules of 03B1 HgI2 in the directions 0394, 03A3 and 039B are derived Abstracts 63.20D Introduction. - Inelastic neutron scattering is a powerful technique for the determination

  9. IAEA-CN-50/G-II-1 COMPACT IGNITION TOKAMAK PHYSICS AND

    E-Print Network [OSTI]

    - plasma experiments [1,2]. Burning-plasma operation in ITER and more advanced fusion reactors [3IAEA-CN-50/G-II-1 COMPACT IGNITION TOKAMAK PHYSICS AND ENGINEERING BASIS* R.R. PARKER', G. BATEMAN University, Princeton, New Jersey, United States of America Abstract COMPACT IGNITION TOKAMAK PHYSICS

  10. Electronic absorption spectra of linear and cyclic Cn in a neon matrix

    E-Print Network [OSTI]

    Maier, John Paul

    Electronic absorption spectra of linear and cyclic Cn + n=7­9 in a neon matrix Jan Fulara, and their electronic absorption spectra in 6 K neon matrices recorded. The linear and cyclic isomers of C7 + and C8 at 371 nm. Linear C8 + shows five dipole-allowed electronic transitions from the X~ 2 g ground state

  11. FAST Pulsar Symposium 2 http://fps2013.csp.escience.cn

    E-Print Network [OSTI]

    Xu, Ren-Xin

    FAST Pulsar Symposium 2 http://fps2013.csp.escience.cn Yunnan Astronomical Observatory Kunming and FAST Early Science" Di Li (NAOC) Renxin Xu (PKU) Jianping Yuan (XAO) Yefei Yuan (USTC) Youling Yue) (2) #12;#12;-- I -- 500 500 Five hundred meters Aperture Spherical Telescope FAST FAST "973

  12. FAST Pulsar Symposium 1 http://fps1.csp.escience.cn/dct/page/1

    E-Print Network [OSTI]

    Xu, Ren-Xin

    FAST Pulsar Symposium 1 http://fps1.csp.escience.cn/dct/page/1 Xinjiang University, Urumqi Xinjiang and FAST Early Science" Di Li (NAOC) Renxin Xu (PKU) Jianping Yuan (XAO) Yefei Yuan (USTC) Youling Yue Five hundred meters Aperture Spherical Telescope FAST FAST 973 FAST 6 973 2012 8 13 16 973 - ­ I ­ #12

  13. Tailored Macroporous SiCN and SiC Structures for High-Temperature Fuel Reforming**

    E-Print Network [OSTI]

    Kenis, Paul J. A.

    Tailored Macroporous SiCN and SiC Structures for High-Temperature Fuel Reforming** By In-Kyung Sung such as the reforming of hydrocarbon fuels (e.g., die- sel or JP-8) into hydrogen for use in portable power sources. Performing heterogeneous catalytic reactions in porous struc- tures at the microscale has certain advantages

  14. Dating the Glass Lake Dugout by Dendrochronology (NY State Museum #CN-37516)

    E-Print Network [OSTI]

    Manning, Sturt

    Dating the Glass Lake Dugout by Dendrochronology (NY State Museum #CN-37516) Carol Griggs, Dendrochronology Lab, Cornell University, cbg4@cornell.edu The Glass Lake Dugout was found at the bottom of Glass for the Glass Lake Dugout (Figure 2B). The series was compared with other site and regional white pine

  15. F1-CN-64/AP2-17 DEUTERIUM-TRITIUM TFTR PLASMAS WITH HIGH

    E-Print Network [OSTI]

    Budny, Robert

    . The fusion power output, Pf, in high temperature tokamak plasmas heated by neutral beam injection scales by increasing the product of li Ip . Technical aspects of generating the high li plasma in previous experimentsF1-CN-64/AP2-17 DEUTERIUM-TRITIUM TFTR PLASMAS WITH HIGH INTERNAL INDUCTANCE* S. A. SABBAGH1 , E. D

  16. Photochemistry of HgBr2 in methanol investigated using time-resolved X-ray liquidography

    E-Print Network [OSTI]

    Ihee, Hyotcherl

    , the photodissociation of HgX2 in the gas phase has been the subject of many spectroscopic and theoretical studies-body dissociation of HgI2 - HgI + I along reaction coordinates consisting of two vibrational modes.16,17 Moreover with the potential applications in blue-green laser system.22,23 Photodissociation of HgX2 induces the formation

  17. IDS120j: NO RESISTIVE MAGNETS / NEW Hg MODULE AZIMUTHAL DEPOSITED POWER STUDIES FOR SC#10-SC#12

    E-Print Network [OSTI]

    McDonald, Kirk

    SECTIONS WITH DETAILS OF Hg POOL MODULE FROM VAN GRAVE'S PRESENTATION ( 8 / 9 / 2012 ). THE DESIGN REQUIRES A 2.5 cm ! GAP BETWEEN SH#1 INNER VESSEL AND Hg POOL MODULE OUTER VESSEL. AN EVEN LARGER SPACE APPEARS TO BE BETWEEN INNER AND OUTER VESSEL OF THE Hg POOL MODULE FOR THE FLOW OF He GAS FOR COOLING THE POOL

  18. IDS120j WITHOUT RESISTIVE MAGNETS: NEW Hg MODULE mars1510: OFF VS. ON LAQGSM MODE SIMULATIONS

    E-Print Network [OSTI]

    McDonald, Kirk

    5E4 EVENTS ] #12;3 IDS120j: yz CROSS SECTIONS WITH DETAILS OF Hg POOL MODULE FROM VAN GRAVE'S PRESENTATION ( 8 / 9 / 2012 ). THE DESIGN REQUIRES A 2.5 cm ! GAP BETWEEN SH#1 INNER VESSEL AND Hg POOL MODULE OUTER VESSEL. AN EVEN LARGER SPACE APPEARS TO BE BETWEEN INNER AND OUTER VESSEL OF THE Hg POOL MODULE

  19. IDS120h GEOMETRY WITH MODIFIED Hg POOL VESSEL SIMULATIONS FOR 60% W + 40% He SHIELDING (P12 'POINT') WITH

    E-Print Network [OSTI]

    McDonald, Kirk

    IDS120h GEOMETRY WITH MODIFIED Hg POOL VESSEL SIMULATIONS FOR 60% W + 40% He SHIELDING (P12 'POINT POWER DISTRIBUTION. Nicholas Souchlas, PBL (1/24/2012) 1 #12;IDS120hm: (m IS FOR) modified Hg pool 'POINT'). >GAUSSIAN PROFILE: x = y = 0.12 cm. 2 #12;3 IDS120hm GEOMETRY = IDS120h WITH MODIFIED Hg POOL

  20. Growth of HgTe Quantum Wells for IR to THz Detectors S. DVORETSKY,1,3

    E-Print Network [OSTI]

    Ganichev, Sergey

    on this research, high-quality (013)-grown HgTe QW structures can be used for all-electric detection of radiation. Detection was demon- strated for various low-power continuous-wave (CW) lasers and high-power THz pulsed laser systems. Key words: Growth, HgTe, HgCdTe, quantum wells (QWs), ellipsometric parameters, MBE, far

  1. The Spectra of Main Sequence Stars in Galactic Globular Clusters II. CH and CN Bands in M71

    E-Print Network [OSTI]

    J. G. Cohen

    1999-01-26

    Spectra with a high signal-to-noise ratio of 79 stars which are just below the main sequence turnoff of M71 are presented. They yield indices for the strength of the G band of CH and the ultraviolet CN band at 3885 \\AA. These indices are each to first order bimodal and they are anti-correlated. There are approximately equal numbers of CN weak/CH strong and CN strong/CH weak main sequence stars in M71. It is not yet clear whether these star-to-star variations arise from primordial variations or from mixing within a fraction of individual stars as they evolve.

  2. Dynamics of CN+alkane reactions by crossed-beam dc slice imaging

    SciTech Connect (OSTI)

    Huang Cunshun; Li Wen; Estillore, Armando D.; Suits, Arthur G.

    2008-08-21

    The hydrogen atom abstraction reactions of CN (X {sup 2}{sigma}{sup +}) with alkanes have been studied using the crossed molecular beam technique with dc slice ion imaging at collision energies of 7.5 and 10.8 kcal/mol. The product alkyl radical images were obtained via single photon ionization at 157 nm for the reactions of CN (X {sup 2}{sigma}{sup +}) with n-butane, n-pentane, n-hexane, and cyclohexane. From analysis of the images, we obtained the center-of-mass frame product angular distributions and translational energy distributions directly. The results indicate that the products are largely backscattered and that most of the available energy ({approx}80%-85%) goes to the internal energy of the products. The reaction dynamics is discussed in light of recent kinetics data, theoretical calculations, and results for related halogen and oxygen atom reactions.

  3. Shape coexistence in {sup 180}Hg studied through the {beta} decay of {sup 180}Tl

    SciTech Connect (OSTI)

    Elseviers, J.; Bree, N.; Diriken, J.; Huyse, M.; Ivanov, O.; Van den Bergh, P.; Van Duppen, P.; Andreyev, A. N.; Antalic, S.; Barzakh, A.; Fedorov, D.; Cocolios, T. E.; Seliverstov, M.; Comas, V. F.; Heredia, J. A.; Fedosseyev, V. N.; Marsh, B. A.; Franchoo, S.; Page, R. D.

    2011-09-15

    The {beta}{sup +}/EC decay of {sup 180}Tl and excited states in the daughter nucleus {sup 180}Hg have been investigated at the CERN On-Line Isotope Mass Separator (ISOLDE) facility. Many new low-lying energy levels were observed in {sup 180}Hg, of which the most significant are the 0{sub 2}{sup +} at 419.6 keV and the 2{sub 2}{sup +} at 601.3 keV. The former is the bandhead of an excited band in {sup 180}Hg assumed originally to be of prolate nature. From the {beta} feeding to the different states in {sup 180}Hg, the ground-state spin of {sup 180}Tl was deduced to be (4{sup -},5{sup -}).

  4. Results of Hg speciation testing on tanks 30, 32, and 37 surface samples

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2015-11-11

    The Savannah River National Laboratory (SRNL) was tasked with preparing and shipping samples for Hg speciation by Eurofins Frontier Global Sciences, Inc. in Seattle, WA on behalf of the Savannah River Remediation (SRR) Mercury Task Team.

  5. Experimental and Theoretical Examination of C-CN and C-H Bond Activations of Acetonitrile Using Zerovalent Nickel

    E-Print Network [OSTI]

    Jones, William D.

    from acetonitrile to aryl halides by palladium bisphosphine complexes in the presence of zinc metal powder to give the ArCN compounds has been reported by Luo.9 Despite these reports, there is only

  6. Palladium-catalyzed C-N cross-coupling reactions toward the synthesis of drug-like molecules

    E-Print Network [OSTI]

    McAvoy, Camille Z

    2012-01-01

    The development of methodologies for C-N bond formation reactions is an important scientific challenge because of many academic and industrial applications. This work will focus particularly on palladium-catalyzed ...

  7. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  8. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01

    . 73, 396 ~1994!. @7# J.C. Hardy, and I.S. Towner, Phys. Rev. Lett. 88, 252501 ~2002!. @8# J.C. Hardy and I.S. Towner, Eur. Phys. J. A 15, 223 ~2002!. @9# C.N. Davids, C.A. Gagliardi, M.J. Murphy, and E.B. Norman, 015501- daughter 62Zn have been..., 1463 ~1979!. @10# F. Herfurth et al., Eur. Phys. J. A 15, 17 ~2002!. @11# R. Chiba, S. Shibasaki, T. Numao, H. Yokota, S. Yamada, K. Kotajima, S. Itagaki, S. Iwasaki, T. Takeda, and T. Shinozuka, Phys. Rev. C 17, 2219 ~1978!. @12# D.E. Alburger...

  9. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  10. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  11. In-beam conversion-electron spectroscopy of {sup 180}Hg

    SciTech Connect (OSTI)

    Page, R. D.; Wiseman, D. R.; Butler, P. A.; Herzberg, R.-D.; Jones, G. D.; Joss, D. T.; Keenan, A.; Rainovski, G. I.; Andreyev, A. N.; Grahn, T.; Greenlees, P. T.; Jones, P. M.; Julin, R.; Juutinen, S.; Kankaanpaeae, H.; Kettunen, H.; Kuusiniemi, P.; Leino, M.; Muikku, M.; Nieminen, P.

    2011-09-15

    Excited states in {sup 180}Hg were populated using the {sup 147}Sm({sup 36}Ar,3n){sup 180}Hg reaction and studied by in-beam conversion-electron spectroscopy. Conversion electrons emitted at the target position were measured using the Silicon Array for Conversion Electron Detection (SACRED) spectrometer and tagged through the characteristic {alpha} decays of {sup 180}Hg detected in a position-sensitive silicon strip detector located at the focal plane of the gas-filled recoil separator Recoil Ion Transport Unit (RITU). Electron conversion of transitions previously assigned to {sup 180}Hg through in-beam {gamma}-ray spectroscopy studies was identified up to the 10{sup +}{yields}8{sup +} transition and the intensities of the conversion-electron transitions were found to be consistent with the previous multipolarity assignments. Evidence was also found for two highly converted transitions in {sup 180}Hg: a 167 keV transition is interpreted as the transition from the newly identified 2{sub 2}{sup +} state at 601 keV to the 2{sub 1}{sup +} state at 434 keV, while a 420 keV transition is assigned as the E0 decay from the 0{sup +} bandhead of the prolate-deformed configuration to the weakly deformed ground state.

  12. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  13. IDS120j WITHOUT RESISTIVE MAGNETS: NEW Hg MODULE MARS1510 ( DESKTOP ) vs. MARS1512 ( PRINCETON CLUSTER )

    E-Print Network [OSTI]

    McDonald, Kirk

    500,000 / 5,000,000 2 #12;3 IDS120j: yz CROSS SECTIONS WITH DETAILS OF Hg POOL MODULE FROM VAN GRAVE'S PRESENTATION ( 8 / 9 / 2012 ). THE DESIGN REQUIRES A 2.5 cm ! GAP BETWEEN SH#1 INNER VESSEL AND Hg POOL MODULE OUTER VESSEL. AN EVEN LARGER SPACE APPEARS TO BE BETWEEN INNER AND OUTER VESSEL OF THE Hg POOL MODULE

  14. IDS120j WITHOUT RESISTIVE MAGNETS: NEW Hg MODULE mars1510 ( DESKTOP ) vs. mars1512 ( PRINCETON CLUSTER )

    E-Print Network [OSTI]

    McDonald, Kirk

    500,000 / 5,000,000 20,000,000 2 #12;3 IDS120j: yz CROSS SECTIONS WITH DETAILS OF Hg POOL MODULE FROM VESSEL AND Hg POOL MODULE OUTER VESSEL. AN EVEN LARGER SPACE APPEARS TO BE BETWEEN INNER AND OUTER VESSEL OF THE Hg POOL MODULE FOR THE FLOW OF He GAS FOR COOLING THE POOL. THE RADIUS OF THE UPPER HALF SEMICIRCULAR

  15. IDS120h GEOMETRY WITH MODIFIED Hg POOL VESSEL SIMULATIONS FOR 60% W + 40% He SHIELDING (P12 'POINT')

    E-Print Network [OSTI]

    McDonald, Kirk

    IDS120h GEOMETRY WITH MODIFIED Hg POOL VESSEL SIMULATIONS FOR 60% W + 40% He SHIELDING (P12 'POINT (12/27/2011) 1 #12;IDS120hm: (m IS FOR) modified Hg pool vessel IN IDS120h. # 5E5 SIMULATIONS AND SHIFTED Be WIDOW FROM 600 cm (0.6 cm THICK) TO 300 cm (1 cm THICK). MODIFIED Hg POOL EXTENTS FROM 86 cm

  16. The peculiar distribution of CH3CN in IRC+10216 seen by ALMA

    E-Print Network [OSTI]

    Agundez, M; Quintana-Lacaci, G; Prieto, L Velilla; Castro-Carrizo, A; Marcelino, N; Guelin, M

    2015-01-01

    IRC+10216 is a circumstellar envelope around a carbon-rich evolved star which contains a large variety of molecules. According to interferometric observations, molecules are distributed either concentrated around the central star or as a hollow shell with a radius of 15". We present ALMA Cycle 0 band 6 observations of the J=14-13 rotational transition of CH3CN in IRC+10216, obtained with an angular resolution of 0.76x0.61. The bulk of the emission is distributed as a hollow shell located at just 2" from the star, with a void of emission in the central region up to a radius of 1". This spatial distribution is markedly different from those found to date in this source for other molecules. Our analysis indicate that methyl cyanide is not formed neither in the stellar photosphere nor far in the outer envelope, but at radial distances as short as 1-2", reaching a maximum abundance of 5e-8 with respect to H2 at about 6" from the star. Standard chemical models of IRC+10216 predict that CH3CN should form farther out ...

  17. The first direct measurement of 12C(12C,n)23Mg at stellar energies

    E-Print Network [OSTI]

    Bucher, B; Fang, X; Heger, A; Almaraz-Calderon, S; Alongi, A; Ayangeakaa, A D; Beard, M; Best, A; Browne, J; Cahillane, C; Couder, M; deBoer, R J; Kontos, A; Lamm, L; Li, Y J; Long, A; Lu, W; Lyons, S; Notani, M; Patel, D; Paul, N; Pignatari, M; Roberts, A; Robertson, D; Smith, K; Stech, E; Talwar, R; Tan, W P; Wiescher, M; Woosley, S E

    2015-01-01

    Neutrons produced by the carbon fusion reaction 12C(12C,n)23Mg play an important role in stellar nucleosynthesis. However, past studies have shown large discrepancies between experimental data and theory, leading to an uncertain cross section extrapolation at astrophysical energies. We present the first direct measurement that extends deep into the astrophysical energy range along with a new and improved extrapolation technique based on experimental data from the mirror reaction 12C(12C,p)23Na. The new reaction rate has been determined with a well-defined uncertainty that exceeds the precision required by astrophysics models. Using our constrained rate, we find that 12C(12C,n)23Mg is crucial to the production of Na and Al in Pop-III Pair Instability Supernovae. It also plays a non-negligible role in the production of weak s-process elements as well as in the production of the important galactic gamma-ray emitter 60Fe.

  18. 3/11/08 3:37 PMSkewness Page 1 of 3http://bbs.sachina.pku.edu.cn/stat/math_world/math/s/s381.htm

    E-Print Network [OSTI]

    Masci, Frank

    3/11/08 3:37 PMSkewness Page 1 of 3http://bbs.sachina.pku.edu.cn/stat/math_world/math/s/s381.htm:37 PMSkewness Page 2 of 3http://bbs.sachina.pku.edu.cn/stat/math_world/math/s/s381.htm (6) The Bowley Skewness of a #12;3/11/08 3:37 PMSkewness Page 3 of 3http://bbs.sachina.pku.edu.cn/stat/math_world/math/s/s381.htm

  19. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  20. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  1. SmartHG: Energy Demand Aware Open Services for Smart Grid Intelligent Automation

    E-Print Network [OSTI]

    Tronci, Enrico

    : to minimise energy usage and cost for each home, and to support the Distribution Network Operator (DNO) in optimising operation of the Electric Distribution Network (EDN). SmartHG goals are achieved solar panels)], for each time slot (say each hour) the DNO price policy defines an interval of energy

  2. IDS120h POWER DEPOSITION AND Hg POOL STUDIES Nicholas Souchlas (7/26/2011)

    E-Print Network [OSTI]

    McDonald, Kirk

    IDS120h POWER DEPOSITION AND Hg POOL STUDIES Nicholas Souchlas (7/26/2011) 1 #12;Power deposition;ENERGY DEPOSITED IN SC SOLENOIDS (SC#), SHIELDING (SH#). P12 OPTIMIZED POINT, POOL WALL CASES x=+/-6W DECREASE IN DP (BLUE AREA) SH#4~ SMALL INCREASE IN DP (YELLOW AREA) RS, BP~ SAME DP #12;HIGHLIGHTS : Power

  3. Application of tree rings [dendrochemistry] for detecting historical trends in air Hg concentrations across multiple

    E-Print Network [OSTI]

    Weisberg, Peter J.

    ). Additional sources include cement production, oil and ore processing, mining (lead, zinc, pig iron, steel to millennia) at time steps of B5 years. Keywords Pinus Á National Park Á Proxy for air pollution Á Mining, artisanal mining and coal combus- tion are considered the two major sources of Hg emissions (UNEP 2013

  4. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  5. Gate-Defined Wires in HgTe Quantum Wells: From Majorana Fermions to Spintronics Johannes Reuther and Jason Alicea

    E-Print Network [OSTI]

    Yacoby, Amir

    Gate-Defined Wires in HgTe Quantum Wells: From Majorana Fermions to Spintronics Johannes Reuther and various spintronics applications based on gate-defined wires in HgTe quantum wells. Because of the Dirac­15] architectures, while not usually viewed from a spintronics lens, similarly rely crucially on spin manipulation

  6. Concurrent Collections (CnC): A new approach to parallel programming

    ScienceCinema (OSTI)

    None

    2011-10-06

    A common approach in designing parallel languages is to provide some high level handles to manipulate the use of the parallel platform. This exposes some aspects of the target platform, for example, shared vs. distributed memory. It may expose some but not all types of parallelism, for example, data parallelism but not task parallelism. This approach must find a balance between the desire to provide a simple view for the domain expert and provide sufficient power for tuning. This is hard for any given architecture and harder if the language is to apply to a range of architectures. Either simplicity or power is lost. Instead of viewing the language design problem as one of providing the programmer with high level handles, we view the problem as one of designing an interface. On one side of this interface is the programmer (domain expert) who knows the application but needs no knowledge of any aspects of the platform. On the other side of the interface is the performance expert (programmer or program) who demands maximal flexibility for optimizing the mapping to a wide range of target platforms (parallel / serial, shared / distributed, homogeneous / heterogeneous, etc.) but needs no knowledge of the domain. Concurrent Collections (CnC) is based on this separation of concerns. The talk will present CnC and its benefits. About the speaker Kathleen Knobe has focused throughout her career on parallelism especially compiler technology, runtime system design and language design. She worked at Compass (aka Massachusetts Computer Associates) from 1980 to 1991 designing compilers for a wide range of parallel platforms for Thinking Machines, MasPar, Alliant, Numerix, and several government projects. In 1991 she decided to finish her education. After graduating from MIT in 1997, she joined Digital Equipment?s Cambridge Research Lab (CRL). She stayed through the DEC/Compaq/HP mergers and when CRL was acquired and absorbed by Intel. She currently works in the Software and Services Group / Technology Pathfinding and Innovation.

  7. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  8. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  9. Theoretical Study of the Structural Evolution of a Na2FeMn(CN)6 Cathode upon Na Intercalation

    E-Print Network [OSTI]

    Henkelman, Graeme

    Blue analog, NaxFeMn(CN)6, is a potential new cathode material for Na-ion batteries. During Na-sharing tetrahedra. INTRODUCTION Cathode materials for Li and Na batteries have attracted a great deal of interest for renewable energy applications.1-3 They are also of interest scientifically, owing to the rich chemistry

  10. FISH AND SHRIMP MIGRATIONS IN THE NORTHERN GULF OF MEXICO ANALYZED USING STABLE C,N, ANDS ISOTOPE RATIOS1

    E-Print Network [OSTI]

    FISH AND SHRIMP MIGRATIONS IN THE NORTHERN GULF OF MEXICO ANALYZED USING STABLE C,N, ANDS ISOTOPE RATIOS1 BRIAN FRY' ABSTRACT Natural stable isotope tags were used in the northern GulfofMexico to interpret migrations offive commer- cial fish and shrimp species: Leiostomus xanthurus, Micropogonias undu

  11. Nonadiabatic dynamics in the photodissociation of ICH2CN at 266 and 304 nm studied by the velocity map imaging

    E-Print Network [OSTI]

    Kim, Sang Kyu

    to be rigid predicts the energy disposal quite well. Delocalization of an unpaired electron of the CH2CN for several decades since they provide the prototypical system not only of direct- bond dissociations . The absorption is followed by a direct C­I bond dissociation along the reaction coordinate where the Landau

  12. A periodic orbit analysis of the vibrationally highly excited LiNC/LiCN: A comparison with quantum mechanics

    E-Print Network [OSTI]

    Guantes, Raúl

    mechanical calculations, avail- able mainly for the low energy vibrational levels. Now, the LiA periodic orbit analysis of the vibrationally highly excited LiNC/LiCN: A comparison with quantum mechanics R. Prosmiti and S. C. Farantos Institute of Electronic Structure and Laser, Foundation

  13. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  14. Axi-symmetrical flow reactor for [sup 196]Hg photochemical enrichment

    DOE Patents [OSTI]

    Grossman, M.W.

    1991-04-30

    The present invention is directed to an improved photochemical reactor useful for the isotopic enrichment of a predetermined isotope of mercury, especially, [sup 196]Hg. Specifically, two axi-symmetrical flow reactors were constructed according to the teachings of the present invention. These reactors improve the mixing of the reactants during the photochemical enrichment process, affording higher yields of the desired [sup 196]Hg product. Measurements of the variation of yield (Y) and enrichment factor (E) along the flow axis of these reactors indicates very substantial improvement in process uniformity compared to previously used photochemical reactor systems. In one preferred embodiment of the present invention, the photoreactor system was built such that the reactor chamber was removable from the system without disturbing the location of either the photochemical lamp or the filter employed therewith. 10 figures.

  15. Three very young HgMn stars in the Orion OB1 Association

    E-Print Network [OSTI]

    Vincent M. Woolf; David L. Lambert

    1999-05-18

    We report the detection of three mercury-manganese stars in the Orion OB1 association. HD 37886 and BD-0 984 are in the approximately 1.7 million year old Orion OB1b. HD 37492 is in the approximately 4.6 million year old Orion OB1c. Orion OB1b is now the youngest cluster with known HgMn star members. This places an observational upper limit on the time scale needed to produce the chemical peculiarities seen in mercury-manganese stars, which should help in the search for the cause or causes of the peculiar abundances in HgMn and other chemically peculiar upper main sequence stars.

  16. Automated product recovery in a HG-196 photochemical isotope separation process

    DOE Patents [OSTI]

    Grossman, Mark W. (Belmont, MA); Speer, Richard (Reading, MA)

    1992-01-01

    A method of removing deposited product from a photochemical reactor used in the enrichment of .sup.196 Hg has been developed and shown to be effective for rapid re-cycling of the reactor system. Unlike previous methods relatively low temperatures are used in a gas and vapor phase process of removal. Importantly, the recovery process is understood in a quantitative manner so that scaling design to larger capacity systems can be easily carried out.

  17. Automated product recovery in a Hg-196 photochemical isotope separation process

    DOE Patents [OSTI]

    Grossman, M.W.; Speer, R.

    1992-07-21

    A method of removing deposited product from a photochemical reactor used in the enrichment of [sup 196]Hg has been developed and shown to be effective for rapid re-cycling of the reactor system. Unlike previous methods relatively low temperatures are used in a gas and vapor phase process of removal. Importantly, the recovery process is understood in a quantitative manner so that scaling design to larger capacity systems can be easily carried out. 2 figs.

  18. Homogeneous and Heterogeneous Reaction and Transformation of Hg and Trace Metals in Combustion Systems

    SciTech Connect (OSTI)

    J. Helble; Clara Smith; David Miller

    2009-08-31

    The overall goal of this project was to produce a working dynamic model to predict the transformation and partitioning of trace metals resulting from combustion of a broad range of fuels. The information provided from this model will be instrumental in efforts to identify fuels and conditions that can be varied to reduce metal emissions. Through the course of this project, it was determined that mercury (Hg) and arsenic (As) would be the focus of the experimental investigation. Experiments were therefore conducted to examine homogeneous and heterogeneous mercury oxidation pathways, and to assess potential interactions between arsenic and calcium. As described in this report, results indicated that the role of SO{sub 2} on Hg oxidation was complex and depended upon overall gas phase chemistry, that iron oxide (hematite) particles contributed directly to heterogeneous Hg oxidation, and that As-Ca interactions occurred through both gas-solid and within-char reaction pathways. Modeling based on this study indicated that, depending upon coal type and fly ash particle size, vaporization-condensation, vaporization-surface reaction, and As-CaO in-char reaction all play a role in arsenic transformations under combustion conditions.

  19. Evaluation of HgI[sub 2] detectors for lead detection in paint

    SciTech Connect (OSTI)

    Wang, Y.J.; Iwanczyk, J.S.; Graham, W.R. )

    1993-08-01

    The authors conducted a laboratory study of HgI[sub 2] spectrometers used for in-situ determination of lead on painted surfaces. [sup 109]Cd and [sup 57]Co isotopes have been used to excite lead characteristic x-rays from samples. The energy resolution of HgI[sub 2] detectors in the energy region corresponding to lead K x-rays has been measured. An energy resolution of 880 eV (FWHM) for the 60 keV line from an [sup 241]Am source has been obtained. Measurements using thin film standards ranging from 0.5 mg Pb/cm[sup 2] to 2 mg Pb/cm[sup 2] have been conducted. Detection limits, accuracy and precision of the measurements have been estimated. Based upon a comparison of the results that the authors have obtained with the performance of existing detector technology, the HgI[sub 2] detectors seem to be the best solution for handheld XRF lead analyzers.

  20. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  1. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  2. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  3. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  4. Pressure-Induced Enhanced Magnetic Anisotropy in Mn(N(CN)2)2

    SciTech Connect (OSTI)

    Quintero, P. A. [University of Florida, Gainesville; Rajan, D. [University of Florida, Gainesville; Peprah, M. K. [University of Florida, Gainesville; Brinzari, T. V. [University of Florida, Gainesville; Fishman, Randy Scott [ORNL; Talham, Daniel R. [University of Florida, Gainesville; Meisel, Mark W. [University of Florida, Gainesville

    2015-01-01

    Using DC and AC magnetometry, the pressure dependence of the magnetization of the threedimensional antiferromagnetic coordination polymer Mn(N(CN)2)2 was studied up to 12 kbar and down to 8 K. The magnetic transition temperature, Tc, increases dramatically with applied pressure (P), where a change from Tc(P = ambient) = 16:0 K to Tc(P = 12:1 kbar) = 23:5 K was observed. In addition, a marked difference in the magnetic behavior is observed above and below 7.1 kbar. Specifically, for P < 7:1 kbar, the differences between the field-cooled and zero-field-cooled (fc-zfc) magnetizations, the coercive field, and the remanent magnetization decrease with increasing pressure. However, for P > 7:1 kbar, the behavior is inverted. Additionally, for P > 8:6 kbar, minor hysteresis loops are observed. All of these effects are evidence of the increase of the superexchange interaction and the appearance of an enhanced exchange anisotropy with applied pressure.

  5. Total eclipse of the heart: The AM CVn Gaia14aae / ASSASN-14cn

    E-Print Network [OSTI]

    Campbell, H C; Fraser, M; Hodgkin, S T; de Miguel, E; Gänsicke, B T; Steeghs, D; Hourihane, A; Breedt, E; Littlefair, S P; Koposov, S E; Wyrzykowski, L; Altavilla, G; Blagorodnova, N; Clementini, G; Damljanovic, G; Delgado, A; Dennefeld, M; Drake, A J; Fernández-Hernández, J; Gilmore, G; Gualandi, R; Hamanowicz, A; Handzlik, B; Hardy, L K; Harrison, D L; Ilkiewicz, K; Jonker, P G; Kochanek, C S; Kolaczkowski, Z; Kostrzewa-Rutkowska, Z; Kotak, R; van Leeuwen, G; Leto, G; Ochner, P; Pawlak, M; Palaversa, L; Rixon, G; Rybicki, K; Shappee, B J; Smartt, S J; Torres, M A P; Tomasella, L; Turatto, M; Ulaczyk, K; van Velzen, S; Vince, O; Walton, N A; Wielgórski, P; Wevers, T; Whitelock, P; Yoldas, A; De Angeli, F; Burgess, P; Busso, G; Busuttil, R; Butterley, T; Chambers, K C; Copperwheat, C; Danilet, A B; Dhillon, V S; Evans, D W; Eyer, L; Froebrich, D; Gomboc, A; Holland, G; Holoien, T W -S; Jarvis, J F; Kaiser, N; Kann, D A; Koester, D; Kolb, U; Komossa, S; Magnier, E A; Mahabal, A; Polshaw, J; Prieto, J L; Prusti, T; Riello, M; Scholz, A; Simonian, G; Stanek, K Z; Szabados, L; Waters, C; Wilson, R W

    2015-01-01

    We report the discovery and characterisation of a deeply eclipsing AM CVn-system, Gaia14aae (= ASSASN-14cn). Gaia14aae was identified independently by the All-Sky Automated Survey for Supernovae (ASAS-SN; Shappee et al. 2014) and by the Gaia Science Alerts project, during two separate outbursts. A third outburst is seen in archival Pan-STARRS-1 (PS1; Schlafly et al. 2012; Tonry et al. 2012; Magnier et al. 2013) and ASAS-SN data. Spectroscopy reveals a hot, hydrogen-deficient spectrum with clear double-peaked emission lines, consistent with an accreting double degenerate classification. We use follow-up photometry to constrain the orbital parameters of the system. We find an orbital period of 49.71 min, which places Gaia14aae at the long period extremum of the outbursting AM CVn period distribution. Gaia14aae is dominated by the light from its accreting white dwarf. Assuming an orbital inclination of 90 degrees for the binary system, the contact phases of the white dwarf lead to lower limits of 0.78 M solar an...

  6. Measurements of Dynamic Characteristics of Hg Jet Stream 11/16/2005 by HeeJin Park, SUNY Stony Brook

    E-Print Network [OSTI]

    McDonald, Kirk

    Measurements of Dynamic Characteristics of Hg Jet Stream 11/16/2005 by HeeJin Park, SUNY Stony Brook Purpose : To measure velocity and distortion of jet stream and verify the hydro-dynamic phenomenon

  7. High-pressure dissociation of silver mercury iodide, Ag{sub 2}HgI{sub 4}

    SciTech Connect (OSTI)

    Parfitt, D.C. [Department of Physics, Oxford University, Parks Road, Oxford OX1 3PU (United Kingdom); Hull, S. [ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX (United Kingdom)]. E-mail: s.hull@rl.ac.uk; Keen, D.A. [Department of Physics, Oxford University, Parks Road, Oxford OX1 3PU (United Kingdom); ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX (United Kingdom); Crichton, W. [ESRF, 6 Rue Jules Horowitz, BP 220, 38043 Grenoble CEDEX 9 (France)

    2004-10-01

    High-pressure X-ray diffraction has been used to probe the behavior of the superionic conductor silver mercury iodide (Ag{sub 2}HgI{sub 4}) at pressures up to 5GPa and at temperatures from 295 to 370K. Significant changes in the diffraction spectra, indicative of structural transitions, are observed around 0.7 and 1.3GPa across the range of temperatures studied. The change at 0.7GPa is shown to correspond to the dissociation of silver mercury iodide into silver iodide and mercury iodide, i.e., Ag{sub 2}HgI{sub 4}->2AgI+HgI{sub 2}. The second transition, at 1.3GPa, is due to a structural phase transition within HgI{sub 2}. Rietveld analysis of the diffraction data is used to confirm and refine all the known crystal structures.

  8. Total and organic Hg concentrations in cephalopods from the North Eastern Atlantic waters: influence of geographical origin and feeding

    E-Print Network [OSTI]

    Boyer, Edmond

    %). With the exception of oceanic squids, the digestive gland globally displayed higher T-Hg concentrations than its toxicity as a result of its enhanced penetration through lipid membranes (Boudou et al. 1983

  9. Biokinetics of Hg and Pb accumulation in the encapsulated egg of the1 common cuttlefish Sepia officinalis: radiotracer experiments2

    E-Print Network [OSTI]

    Boyer, Edmond

    with the32 eggshell indicating that the latter acted as an efficient shield against metal penetration. From the Ocean (Cossa et al., 2002). Hg and Pb are also discharged in coastal waters due to the50 contaminated

  10. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  11. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  12. Pedosphere 16(5): 566-571, 2006 ISSN 1002-0160/CN 32-1315/P

    E-Print Network [OSTI]

    Sparks, Donald L.

    Pedosphere 16(5): 566-571, 2006 ISSN 1002-0160/CN 32-1315/P @ 2006 Soil Science Society of China The remaining phosphorus (Prem),P concentration that remains in solution after shaking soil with 0.01 mol L-' CaCl2 containing 60 pg mL-l P, is a very useful index for studies related to the chemistry of variable

  13. 3. La Terra, S., English, C.N., Hergert, P., McEwen, B.F., Sluder, G., and

    E-Print Network [OSTI]

    Silander Jr., John A.

    . Leidel, S., Delattre, M., Cerutti, L., Baumer, K., and Gonczy, P. (2005). SAS-6 defines a protein family3. La Terra, S., English, C.N., Hergert, P., McEwen, B.F., Sluder, G., and Khodjakov, A. (2005. Nature 444, 619­623. 6. Swallow, C.J., Ko, M.A., Siddiqui, N.U., Hudson, J.W., and Dennis, J.W. (2005

  14. The fluxes of CN neutrinos from the Sun in case of mixing in a spherical layer in the solar core

    SciTech Connect (OSTI)

    Kopylov, Anatoly; Petukhov, Valery E-mail: beril@inr.ru

    2012-03-01

    The results of the calculation are presented for the fluxes of CN neutrinos from the Sun in case of mixing in a spherical layer in the solar core, consistent with the seismic data and with the measured solar neutrino fluxes. It is shown that a substantial increase of the flux of {sup 13}N neutrinos can be gained in this case. The possible implications for experiment are discussed.

  15. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  16. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  17. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  18. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  19. 1994-2010 China Academic Journal Electronic Publishing House. All rights reserved. http://www.cnki.net 38 (2009~OE) 6 http: www. wuli. ac. cn

    E-Print Network [OSTI]

    Gao, Hongjun

    § --° · ¢ /»,,> ·¤ ¨ ,¢¶ , ··¤ ~ ª ,--¿ · ... ^ l----`¸ ° . ,, ...·° ¡¡ ¡¡ Graphene,~ ¶ ¿ , ­, ··¤ ,Æ,,,, -- Preparation been exploited to prepare high quality Graphene. Three main methods are reviewed, including the thermal://www.cnki.net ¡¡Îï Àí ¡¤38 (2009~OE) 6 ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ ¡¡ http: www. wuli. ac. cn Graphene¿ § º

  20. A versatile source to produce high-intensity, pulsed supersonic radical beams for crossed-beam experiments: The cyanogen radical CN,,X2

    E-Print Network [OSTI]

    Kaiser, Ralf I.

    terrestrial and extraterrestrial environments. Initiated by the solar photolyses of hydrogen cyanide HCN are obtained by monitoring the decay kinetics of the CN radical, these investigations could not provide reac

  1. Chemical spots and their dynamical evolution on HgMn stars

    E-Print Network [OSTI]

    Korhonen, Heidi; Briquet, Maryline; Gonzalez, Federico; Savanov, Igor

    2010-01-01

    Our recent studies of late B-type stars with HgMn peculiarity revealed for the first time the presence of fast dynamical evolution of chemical spots on their surfaces. These observations suggest a hitherto unknown physical process operating in the stars with radiative outer envelopes. Furthermore, we have also discovered existence of magnetic fields on these stars that have up to now been thought to be non-magnetic. Here we will discuss the dynamical spot evolution on HD 11753 and our new results on magnetic fields on AR Aur.

  2. Quantum Anomalous Hall Effect in Hg_1-yMn_yTe Quantum Wells

    SciTech Connect (OSTI)

    Liu, Chao-Xing; /Tsinghua U., Beijing /Stanford U., Phys. Dept.; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{sub 1-y}Mn{sub y}Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

  3. Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

    SciTech Connect (OSTI)

    Kozlov, D. A. Kvon, Z. D.; Mikhailov, N. N.; Dvoretskii, S. A.; Weishäupl, S.; Krupko, Y.; Portal, J.-C.

    2014-09-29

    We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6?nm HgTe quantum well at magnetic fields up to 34?T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ? of 1 and 2. This indicates that the large values of the g-factor (about 30–40) remain unchanged at very strong magnetic fields.

  4. Sol-Gel Synthesis of KVII[CrIII(CN)6],2H2O: A Crystalline Molecule-Based Magnet with a Magnetic

    E-Print Network [OSTI]

    Girolami, Gregory S.

    of VII(OTf)2 9 with [NEt4]3- [CrIII (CN)6]10 under anaerobic conditions affords a dark blue gel after(ethyl)ammonium, NEt4 + .6-8 These counterions were initially chosen because they are too large to be incorporated to afford VII[CrIII(CN)6]0.66,3.5H2O,0.1[NEt4][OTf] (1).11 Addition of alkali metal cations to the reaction

  5. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  6. Report on International Collaboration Involving the FE Heater and HG-A Tests at Mont Terri

    SciTech Connect (OSTI)

    Houseworth, Jim; Rutqvist, Jonny; Asahina, Daisuke; Chen, Fei; Vilarrasa, Victor; Liu, Hui-Hai; Birkholzer, Jens

    2013-11-06

    Nuclear waste programs outside of the US have focused on different host rock types for geological disposal of high-level radioactive waste. Several countries, including France, Switzerland, Belgium, and Japan are exploring the possibility of waste disposal in shale and other clay-rich rock that fall within the general classification of argillaceous rock. This rock type is also of interest for the US program because the US has extensive sedimentary basins containing large deposits of argillaceous rock. LBNL, as part of the DOE-NE Used Fuel Disposition Campaign, is collaborating on some of the underground research laboratory (URL) activities at the Mont Terri URL near Saint-Ursanne, Switzerland. The Mont Terri project, which began in 1995, has developed a URL at a depth of about 300 m in a stiff clay formation called the Opalinus Clay. Our current collaboration efforts include two test modeling activities for the FE heater test and the HG-A leak-off test. This report documents results concerning our current modeling of these field tests. The overall objectives of these activities include an improved understanding of and advanced relevant modeling capabilities for EDZ evolution in clay repositories and the associated coupled processes, and to develop a technical basis for the maximum allowable temperature for a clay repository. The R&D activities documented in this report are part of the work package of natural system evaluation and tool development that directly supports the following Used Fuel Disposition Campaign (UFDC) objectives: ? Develop a fundamental understanding of disposal-system performance in a range of environments for potential wastes that could arise from future nuclear-fuel-cycle alternatives through theory, simulation, testing, and experimentation. ? Develop a computational modeling capability for the performance of storage and disposal options for a range of fuel-cycle alternatives, evolving from generic models to more robust models of performance assessment. For the purpose of validating modeling capabilities for thermal-hydro-mechanical (THM) processes, we developed a suite of simulation models for the planned full-scale FE Experiment to be conducted in the Mont Terri URL, including a full three-dimensional model that will be used for direct comparison to experimental data once available. We performed for the first time a THM analysis involving the Barcelona Basic Model (BBM) in a full three-dimensional field setting for modeling the geomechanical behavior of the buffer material and its interaction with the argillaceous host rock. We have simulated a well defined benchmark that will be used for codeto- code verification against modeling results from other international modeling teams. The analysis highlights the complex coupled geomechanical behavior in the buffer and its interaction with the surrounding rock and the importance of a well characterized buffer material in terms of THM properties. A new geomechanical fracture-damage model, TOUGH-RBSN, was applied to investigate damage behavior in the ongoing HG-A test at Mont Terri URL. Two model modifications have been implemented so that the Rigid-Body-Spring-Network (RBSN) model can be used for analysis of fracturing around the HG-A microtunnel. These modifications are (1) a methodology to compute fracture generation under compressive stress conditions and (2) a method to represent anisotropic elastic and strength properties. The method for computing fracture generation under compressive load produces results that roughly follow trends expected for homogeneous and layered systems. Anisotropic properties for the bulk rock were represented in the RBSN model using layered heterogeneity and gave bulk material responses in line with expectations. These model improvements were implemented for an initial model of fracture damage at the HG-A test. While the HG-A test model results show some similarities with the test observations, differences between the model results and observations remain.

  7. Fission decay of Cr-48 at E*{sub CN} approximate to 60 MeV.

    SciTech Connect (OSTI)

    Farrar, K. A.; Sanders, S. J.; Dummer, A. K.; Hasan, A. T.; Prosser, F. W.; Back, B. B.; Bearden, I. G.; Betts, R. R.; Carpenter, M. P.; Crowell, B.; Freer, M.; Henderson, D. J.; Janssens, R. V. F.; Khoo, T. L.; Lauritsen, T.; Liang, Y.; Nisius, D.; Wuosmaa, A. H.; Beck, C.; Freeman, R. M.; Cavallaro, S.; Szanto de Toledo, A.; Physics; Univ. of Kansas; Univ. Louis Pasteur; Univ. di Catania; Univ. de Sao Paulo

    1996-09-01

    The fully energy-damped yields for the {sup 36}Ar + {sup 12}C and {sup 20}Ne + {sup 28}Si reactions at E{sub c.m.}=47.0 MeV and 45.5 MeV, respectively, are explored using particle-particle-{gamma} coincidence data. These reactions reach a similar excitation energy of E{sub CN}*=59.5 MeV in the {sup 48}Cr compound nucleus as was obtained in an earlier particle-particle coincidence study of the {sup 24}Mg + {sup 24}Mg reaction. The overall mass and total kinetic energy distributions of the fission fragments are found to be well reproduced by statistical-model calculations. These calculations are also found to reproduce structure seen in the excitation-energy spectra for the {sup 20}Ne + {sup 28}Si and {sup 24}Mg + {sup 24}Mg exit channels for all three reactions. In previous excitation-function measurements, strong heavy-ion resonance behavior has been observed in elastic and inelastic cross sections for the {sup 24}Mg + {sup 24}Mg system. There has been speculation that peaks observed in the corresponding excitation-energy spectra at more negative Q values may also be a consequence of this resonance phenomenon. The observation of very similar behavior with the asymmetric-mass entrance channels makes it less likely, though, that the peaks arise from any special configuration of the compound system. Instead, an analysis of the {gamma}-ray data and the results of statistical-model calculations support the conclusion that most of the observed high-lying structure can be accounted for in terms of statistical fission from a fully energy- and shape-equilibrated compound nucleus. For the {sup 24}Mg + {sup 24}Mg entrance channel, however, comparisons with the statistical model indicate a reduction of high-angular-momentum partial cross sections, leading to the {sup 24}Mg + {sup 24}Mg fission channel. For the first time, we are able to deduce the nature of the competition between the resonance and statistical-fission mechanisms in this mass region.

  8. IDS120h GEOMETRY WITH MODIFIED Hg POOL VESSEL SIMULATIONS FOR 60% W + 40% He SHIELDING (P11/P12 'POINTS') (CONT.)

    E-Print Network [OSTI]

    McDonald, Kirk

    IDS120h GEOMETRY WITH MODIFIED Hg POOL VESSEL SIMULATIONS FOR 60% W + 40% He SHIELDING (P11/P12hm: (m IS FOR) modified Hg pool vessel IN IDS120h. # 1E5 AND 5E5 SIMULATIONS COMPARISON = y = 0.12 cm. 2 #12;3 IDS120hm GEOMETRY = IDS120h WITH MODIFIED Hg POOL VESSEL AND SHIFTED Be WIDOW

  9. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  10. Optical emission spectroscopy of metal-halide lamps: Radially resolved atomic state distribution functions of Dy and Hg

    SciTech Connect (OSTI)

    Nimalasuriya, T.; Flikweert, A.J.; Stoffels, W.W.; Haverlag, M.; Mullen, J.J.A.M. van der; Pupat, N.B.M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Ecole Nationale Superieure de Chimie de Paris, 11 Rue Pierre et Marie Curie, 75005 Paris (France)

    2006-03-01

    Absolute line intensity measurements are performed on a metal-halide lamp. Several transitions of atomic and ionic Dy and atomic Hg are measured at different radial positions from which we obtain absolute atomic and ionic Dy intensity profiles. From these profiles we construct the radially resolved atomic state distribution function (ASDF) of the atomic and ionic Dy and the atomic Hg. From these ASDFs several quantities are determined as functions of radial position, such as the (excitation) temperature, the ion ratio Hg{sup +}/Dy{sup +}, the electron density, the ground state, and the total density of Dy atoms and ions. Moreover, these ASDFs give us insight about the departure from equilibrium. The measurements show a hollow density profile for the atoms and the ionization of atoms in the center. In the outer parts of the lamp molecules dominate.

  11. H.G. Okuno and M. Ali (Eds.): IEA/AIE 2007, LNAI 4570, pp. 444453, 2007. Springer-Verlag Berlin Heidelberg 2007

    E-Print Network [OSTI]

    Cho, Sung-Bae

    H.G. Okuno and M. Ali (Eds.): IEA/AIE 2007, LNAI 4570, pp. 444­453, 2007. © Springer-Verlag Berlin

  12. H.G. Okuno and M. Ali (Eds.): IEA/AIE 2007, LNAI 4570, pp. 621632, 2007. Springer-Verlag Berlin Heidelberg 2007

    E-Print Network [OSTI]

    Bosse, Tibor

    H.G. Okuno and M. Ali (Eds.): IEA/AIE 2007, LNAI 4570, pp. 621­632, 2007. © Springer-Verlag Berlin

  13. H.G. Okuno and M. Ali (Eds.): IEA/AIE 2007, LNAI 4570, pp. 796805, 2007. Springer-Verlag Berlin Heidelberg 2007

    E-Print Network [OSTI]

    Cho, Sung-Bae

    H.G. Okuno and M. Ali (Eds.): IEA/AIE 2007, LNAI 4570, pp. 796­805, 2007. © Springer-Verlag Berlin

  14. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  15. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  16. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  17. 1-D and 2-D homoleptic dicyanamide structures, [Ph{sub 4}P]{sub 2}{Co{sup II}[N(CN){sub 2}]{sub 4}} and [Ph{sub 4}P]{M[N(CN){sub 2}]{sub 3}} (M = Mn, Co).

    SciTech Connect (OSTI)

    Raebiger, J. W.; Manson, J. L.; Sommer, R. D.; Geiser, U.; Rheingold, A. L.; Miller, J. S.; Materials Science Division; Univ. of Utah; Univ. of Delaware

    2001-05-21

    The homoleptic complexes [Ph{sub 4}P]{sub 2}{l_brace}Co[N(CN){sub 2}]{sub 4}{r_brace} and [Ph{sub 4}P]{l_brace}M[N(CN){sub 2}]{sub 3}{r_brace} [ M = Co, Mn] have been structurally as well as magnetically characterized. The complexes containing {l_brace}M[N(CN){sub 2}]{sub 4}{r_brace}{sup 2-} form 1-D chains, which are bridged via a common dicyanamide ligand in {l_brace}M[N(CN){sub 2}]{sub 3}{r_brace}{sup -} to form a 2-D structure. The five-atom [NCNCN]{sup -} ligands lead to a {sup 4}T{sub 1g} ground state for Co(II) which has an unquenched spin-orbit coupling that is reflected in the magnetic properties. Long-range magnetic ordering was not observed in any of these materials.

  18. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  19. Irradiation damage studies of high power accelerator materials N. Simos a,1,*, H.G. Kirk a

    E-Print Network [OSTI]

    McDonald, Kirk

    and composites. These new high-perfor- mance materials, which appear to possess the right combination to proton beams to assess the survivability potential of these new alloys and composite materials. WhileIrradiation damage studies of high power accelerator materials N. Simos a,1,*, H.G. Kirk a , P

  20. Pinning lattice: Effect of rhenium doping on the microstructural evolution from Tl-2212 to Hg-1212 films during cation exchange

    E-Print Network [OSTI]

    Wu, Judy; Zhao, H.

    2004-08-15

    them. HgBa2CaCu2O6 films obtained from these Re-doped Tl-2212 precursor films have much improved microstructures with the pore dimension reduced by an order of magnitude. (C) 2004 American Institute of Physics....

  1. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  2. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  3. Disentangling the Mn moments on different sublattices in the half-metallic ferrimagnet Mn3?xCoxGa

    SciTech Connect (OSTI)

    Klaer, P.; Jenkins, C.A.; Alijani, V.; Winterlik, J.; Balke, B.; Felser, C.; Elmers, H.J.

    2011-05-03

    Ferrimagnetic Mn{sub 3-x}Co{sub x}Ga compounds have been investigated by magnetic circular dichroism in x-ray absorption (XMCD). Compounds with x > 0.5 crystallize in the CuHg{sub 2}Ti structure. A tetragonal distortion of the cubic structure occurs for x {le} 0.5. For the cubic phase, magnetometry reveals a linearly increasing magnetization of 2x Bohr magnetons per formula unit obeying the generalized Slater-Pauling rule. XMCD confirms the ferrimagnetic character with Mn atoms occupying two different sublattices with antiparallel spin orientation and different degrees of spin localization and identifies the region 0.6 < x {le} 0.8 as most promising for a high spin polarization at the Fermi level. Individual Mn moments on inequivalent sites are compared to theoretical predictions.

  4. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  5. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  6. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  7. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  8. The Spectra of Main Sequence Stars in Galactic Globular Clusters I. CH and CN Bands in M13

    E-Print Network [OSTI]

    J. G. Cohen

    1999-01-26

    Spectra with a high signal-to-noise ratio of 50 stars which are just below the main sequence turnoff and are members of M13 are presented. They yield indices for the strength of the CH and the ultraviolet CN band. There is no evidence for a variation in the strength of either feature from star to star in this intermediate-metallicity galactic globular cluster, and thus no evidence for primordial variations in the abundance of C and N in M13. This supports the hypothesis that abundance variations found among the light elements in the evolved stars of M13 by Suntzeff (1981), and commonly seen on the giant and subgiant branches of globular clusters of comparable metallicity, are due primarily or entirely to mixing within a fraction of individual stars as they evolve.

  9. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  10. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  11. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  12. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  13. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  14. Draft Genome sequence of Frankia sp. strains CN3 , an atypical, non-infective (Nod-) ineffective (Fix-) isolate from Coriaria nepalensis

    SciTech Connect (OSTI)

    Ghodhbane-Gtari, Faten; Beauchemin, Nicholas; Bruce, David; Chain, Patrick S. G.; Chen, Amy; Davenport, Karen W.; Deshpande, Shweta; Detter, J. Chris; Furnholm, Teal; Goodwin, Lynne A.; Gtari, Maher; Han, Cliff; Han, James; Huntemann, Marcel; Ivanova, N; Kyrpides, Nikos C; Land, Miriam L; Markowitz, Victor; Mavromatis, K; Nolan, Matt; Nouioui, Imen; Pagani, Ioanna; Pati, Amrita; Pitluck, Sam; Santos, Catarina; Sen, Arnab; Sur, Saubashya; Szeto, Ernest; Tavares, Fernando; Hazuki, Teshima; Thakur, Subarna; Wall, Luis; Woyke, Tanja; Tisa, Louis S.

    2013-01-01

    We report here the genome sequence of Frankia sp. strain CN3, which was isolated from Coriaria nepalensis. This genome sequence is the first from the fourth lineage of Frankia, that are unable to re-infect actinorhizal plants. At 10 Mb, it represents the largest Frankia genome sequenced to date.

  15. Preprint version 2011 IEEE International Conference on Robotics and Automation, Shanghai, CN A Passivity-Based Decentralized Approach for the Bilateral

    E-Print Network [OSTI]

    Preprint version 2011 IEEE International Conference on Robotics and Automation, Shanghai, CN, search and rescue and exploration of wide areas, the use of a group of simple robots rather than a single complex robot has proven to be very effective and the problem of coordinating a group of agents has

  16. Synthesis and characterization of the hexagonal prismatic cage {THF7[PhB(CN)3]6[Cp*Rh]6}6+

    E-Print Network [OSTI]

    Rauchfuss, Thomas B.

    tectons or building blocks that have geometrically well-defined bridging tendencies.6­8 Through systematic the reaction of PhBCl2 and three equiv. of [K- 18-crown-6]CN in THF solution. This air stable, colorless salt

  17. 80 K anomaly and its effect on the superconducting and magnetic transition in deuterated -,,BEDT-TTF...2CuN,,CN...2Br

    E-Print Network [OSTI]

    Zuo, Fulin

    careful transport and magnetic measurements on single crystals of deuterated - ET 2Cu N CN 2 Br cooling through 80 K will freeze the high temperature magnetic phase to low temperatures and the presence ordering of the chains. In this paper, we report careful transport and magnetic measurements on several

  18. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  19. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  20. Microstructural evolutions in converting epitaxial Tl2Ba2CaCu2Ox thin films to epitaxial HgBa2CaCu2O6+delta thin films

    E-Print Network [OSTI]

    Wu, Judy; Siegal, M. P.; Xie, Y. Y.; Aytug, T.; Fang, L.

    2003-02-01

    Superconducting HgBa2CaCu2O6+delta (Hg-1212) thin films were obtained from Tl2Ba2CaCu2Ox (Tl-2212) precursor films using a cation-exchange process. In this process, Tl cations on the precursor lattice were thermally excited and then replaced with Hg...

  1. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  2. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  3. Trap Activation Energy and Transport Parameters of HgI$_2$ Crystals for Bubble-Plasma Diagnostics

    E-Print Network [OSTI]

    M. B. Miller; V. F. Kushniruk; A. V. Sermyagin

    2003-01-13

    In recent data on neutron induced acoustic cavitation in deuterium--containing liquids obtained by neutron measurements it was shown that very high temperatures could arise in some special cases. To study temperature of so--called bubble plasma it is desirable to have micro--detectors of X-rays, which can be prepared on the basis of room--temperature semiconductor detectors, in particular on mercuric iodide ($\\alpha$--HgI$_2$) crystals. Having in view this aim, the properties of gel--grown ($\\alpha$--HgI$_2$) crystals was studied by means of isothermal currents, and trap parameters was estimated. Results are promising for special aim of preparing X-ray detectors with moderate energy resolution needed in bubble--plasma diagnostic, though improving of crystal growing technology is necessary. {\\it PACS:} 29.40.Wk; 52.70.La {\\it Keywords:} X-ray and gamma--ray measurements; semiconductor detectors; mercuric iodide; plasma diagnostics; cavitation

  4. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  5. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  6. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  7. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  8. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  9. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  10. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  11. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  12. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  13. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  14. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  15. Dynamical evolution of titanium, strontium, and yttrium spots on the surface of the HgMn star HD 11753

    E-Print Network [OSTI]

    Briquet, M; Gonzalez, J F; Hubrig, S; Hackman, T

    2010-01-01

    Aims. We gathered about 100 high-resolution spectra of three typical HgMn (mercury-manganese) stars, HD 11753, HD 53244, and HD 221507, to search for slowly pulsating B-like pulsations and surface inhomogeneous distribution of various chemical elements. Methods. Classical frequency analysis methods were used to detect line profile variability and to determine the variation period. Doppler imaging reconstruction was performed to obtain abundance maps of chemical elements on the stellar surface. Results. For HD 11753, which is the star with the most pronounced variability, distinct spectral line profile changes were detected for Ti, Sr, Y, Zr, and Hg, whereas for HD 53244 and HD 221507 the most variable line profiles belong to the elements Hg and Y, respectively. We derived rotation periods for all three stars from the variations of radial velocities and equivalent widths of spectral lines belonging to inhomogeneously distributed elements: P_rot (HD 11753)=9.54 d, P_rot (HD 53244)=6.16 d, and P_rot (HD 221507)=...

  16. Modeling of electron energy spectra and mobilities in semi-metallic Hg1-xCdxTe quantum wells

    E-Print Network [OSTI]

    Melezhik, E O; Sizov, F F

    2015-01-01

    Electron mobility, energy spectra and intrinsic carrier concentrations in the n-type Hg0.32Cd0.68Te / Hg1-xCdxTe / Hg0.32Cd0.68Te quantum well (QW) in semi-metallic state are numerically modeled. Energy spectra and wave functions were calculated in the framework of the 8-band k-p Hamiltonian. In our model, electron scattering on longitudinal optical phonons, charged impurities, and holes has been taken into account, and the mobility has been calculated by an iterative solution of the Boltzmann transport equation. Our results show that the increase of the electron concentration in the well enhances the screening of the 2D electron gas, decreases the hole concentration, and can ultimately lead to a high electron mobility at liquid nitrogen temperatures. The increase of the electron concentration in the QW could be achieved in situ by delta-doping of barriers or by applying the top-gate potential. Our modeling has shown that for low molar composition x the concentration of holes in the well is high in a wide ran...

  17. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  18. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  19. Results of Hg speciation testing on tanks 30, 32, and 37 depth samples

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2015-11-30

    The Savannah River National Laboratory (SRNL) was tasked with preparing and shipping samples for Hg speciation by Eurofins Frontier Global Sciences, Inc. in Seattle, WA on behalf of the Savannah River Remediation (SRR) Mercury Task Team. The twelfth shipment of samples was designated to include 3H evaporator system Tank 30, 32, and 37 depth samples. The Tank 30 depth sample (HTF-30-15-70) was taken at 190 inches from the tank bottom and the Tank 32 depth sample (HTF-32-15-68) was taken at 89 inches from the tank bottom and both were shipped to SRNL on June 29, 2015 in an 80 mL stainless steel dip bottles. The Tank 37 surface sample (HTF-37-15-94) was taken around 253.4 inches from the tank bottom and shipped to SRNL on July 21, 2015 in an 80 mL stainless steel dip bottle. All samples were placed in the SRNL Shielded Cells and left unopened until intermediate dilutions were made on July 24, 2015 using 1.00 mL of sample diluted to 100.00 mL with deionized H2O. A 30 mL Teflon® bottle was rinsed twice with the diluted tank sample and then filled leaving as little headspace as possible. It was immediately removed from the Shielded Cells and transferred to refrigerated storage where it remained at 4 °C until final dilutions were made on October 20. A second portion of the cells diluted tank sample was poured into a shielded polyethylene bottle and transferred to Analytical Development for radiochemical analysis data needed for Hazardous Material Transportation calculations.

  20. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  1. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  2. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  3. Mechanism of Cation Exchange Process for Epitaxy of Superconducting HgBa2CaCu2O6 Films and Passive Microwave Devices

    E-Print Network [OSTI]

    Zhao, Hua

    2007-12-17

    and the rf JIP3 derived from the IP3 against reduced temperature suggests that the magnetic vortex depinning in HTS materials dominates the microwave nonlinearity at elevated temperatures. These encouraging results have marked Hg-1212 out as a promising...

  4. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  5. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  6. 1 Managed by UT-Battelle for the U.S. Department of Energy NF/IDS Hg Vessel Layout 30 Jun 09

    E-Print Network [OSTI]

    McDonald, Kirk

    1 Managed by UT-Battelle for the U.S. Department of Energy NF/IDS Hg Vessel Layout 30 Jun 09;3 Managed by UT-Battelle for the U.S. Department of Energy NF/IDS Hg Vessel Layout 30 Jun 09 Cross Section to flow out the front of the cryostat #12;4 Managed by UT-Battelle for the U.S. Department of Energy NF

  7. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  8. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  9. Structural and Morphological Difference Between Ti/TiN/TiCN Coatings Grown in Multilayer and Graded Form

    SciTech Connect (OSTI)

    Restrepo, E.; Baena, A.; Agudelo, C.; Castillo, H.; Devia, A.; Marino, A.

    2006-12-04

    Thin films can be grown in super-lattice, multilayers and graded form, having each one advantages and disadvantages. The difference between multilayer and graded coatings is the interface. In multilayers the interface is abrupt and in graded coatings it is diffuse. The interface influences many chemical and physical properties of the materials, and its choice depends on the application. Graded coatings have the advantage of having gradual properties such as thermal expansion coefficient and lattice parameter, avoiding adherence problems due to good match between their component materials. In this work the comparison between some properties of coatings grown as multilayer and graded is performed. The materials are produced using the sputtering DC technique because of its facility to control the deposition parameters and generate a slow growth. The target is a disc of titanium and the samples are made of stainless steel 304. The working gases are argon, nitrogen and methane, which are mixed according to the material to be produced, i.e. Ti layer is grown with argon, the TiN film is produced with a mixture of argon and nitrogen, and the TiCN material is obtained mixing argon, nitrogen and methane. These materials are characterized with AFM in order to determine grain size and with XPS studying the chemical composition and performing depth profiles.

  10. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  11. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  12. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  13. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  14. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  15. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  16. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  17. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  18. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  19. ---Home Yahoo! Help My Yahoo! http://asia.news.yahoo.com/041215/kyodo/d870cn2o0.html

    E-Print Network [OSTI]

    - - -Home Yahoo! Help My Yahoo! http://asia.news.yahoo.com/041215/kyodo/d870cn2o0.html Thursday to release energy. But in a fusion reactor, energy is harnessed by forcing the nuclei of light atoms together.news.yahoo.com/search/news_asia_pf?p=ukey%3A3043438 #12;Rokkasho is already home to nuclear fuel cycle facilities run by Japan Nuclear Fuel

  20. Desulfurization of organic sulfur from a subbituminous coal by electron-transfer process with K{sub 4}(Fe(CN){sub 6})

    SciTech Connect (OSTI)

    Dipu Borah [Pragjyotika J College, Titabar (India). Department of Chemistry

    2006-02-01

    The desulfurization reaction involving direct electron transfer from potassium ferrocyanide, K{sub 4}(Fe(CN){sub 6}), successfully removed organic sulfur from a subbituminous coal. The temperature variation of desulfurization revealed that increase of temperature enhanced the level of sulfur removal. Moreover, the desulfurization reaction was found to be dependent on the concentration of K{sub 4}(Fe(CN){sub 6}). Gradual increase in the concentration of K{sub 4}(Fe(CN){sub 6}) raised the magnitude of desulfurization, but at higher concentration the variation was not significant. The removal of organic sulfur from unoxidized coal slightly increased with reduced particle size. Desulfurization from oxidized coals (prepared by aerial oxidation) revealed a higher level of sulfur removal in comparison to unoxidized coal. Highest desulfurization of 36.4 wt % was obtained at 90{sup o}C and 0.1 M concentration of K{sub 4}(Fe(CN){sub 6}) in the 100-mesh size oxidized coal prepared at 200{sup o}C. Model sulfur compound study revealed that aliphatic types of sulfur compounds are primarily responsible for desulfurization. Because of higher stability, thiophene and condensed thiophene-type of compounds perhaps remained unaffected by the electron-transfer agent. Infrared study revealed the formation of oxidized sulfur compounds (sulfoxide, sulfone, sulfonic acid, etc.) in the oxidized coals. The desulfurization reaction in different systems is well-represented by the pseudo-first-order kinetic model. Application of the transition state theory indicated that the desulfurization reaction proceeds with the absorption of heat (endothermic reaction) and is nonspontaneous in nature. 53 refs., 6 figs., 3 tabs.

  1. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  2. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  3. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

    SciTech Connect (OSTI)

    Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Mynbaev, K. D.; Fitsych, O. I.; Pociask-Bialy, M.; Sheregii, E.; Voitsekhovskii, A. V.

    2014-04-28

    A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700?°C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

  4. Nuclear structure ''southeast'' of {sup 208}Pb: Isomeric states in {sup 208}Hg and {sup 209}Tl

    SciTech Connect (OSTI)

    Al-Dahan, N. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Department of Physics, University of Kerbala, Kerbala (Iraq); Podolyak, Zs.; Regan, P. H.; Alkhomashi, N.; Deo, A. Y.; Farrelly, G.; Steer, S. J.; Cullen, I. J.; Gelletly, W.; Swan, T.; Thomas, J. S.; Walker, P. M. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Gorska, M.; Grawe, H.; Gerl, J.; Pietri, S. B.; Wollersheim, H. J.; Boutachkov, P.; Domingo-Pardo, C.; Farinon, F. [GSI, D-64291 Darmstadt (Germany)] (and others)

    2009-12-15

    The nuclear structure of neutron-rich N>126 nuclei has been investigated following their production via relativistic projectile fragmentation of a E/A=1 GeV {sup 238}U beam. Metastable states in the N=128 isotones {sup 208}Hg and {sup 209}Tl have been identified. Delayed {gamma}-ray transitions are interpreted as arising from the decay of I{sup {pi}}=(8{sup +}) and (17/2{sup +}) isomers, respectively. The data allow for the so far most comprehensive verification of the shell-model approach in the region determined by magic numbers Z<82 and N>126.

  5. First principles calculation of a large variation in dielectric tensor through the spin crossover in the CsFe[Cr(CN){sub 6}] Prussian blue analogue

    SciTech Connect (OSTI)

    Middlemiss, Derek S., E-mail: derekmiddlemiss@gmail.com, E-mail: R.J.Deeth@warwick.ac.uk; Deeth, Robert J., E-mail: derekmiddlemiss@gmail.com, E-mail: R.J.Deeth@warwick.ac.uk [Inorganic Computational Chemistry Group, Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-04-14

    The dielectric response of spin-crossover (SCO) materials is a key property facilitating their use in next-generation information processing technologies. Solid state hybrid density functional theory calculations show that the temperature-induced and strongly hysteretic SCO transition in the Cs{sup +}Fe{sup 2+}[Cr{sup 3+}(CN{sup ?}){sub 6}] Prussian blue analogue (PBA) is associated with a large change (?) in both the static, ??{sup 0}(HS ? LS), and high frequency, ??{sup ?}(HS ? LS) dielectric constants. The SCO-induced variation in CsFe[Cr(CN){sub 6}] is significantly greater than the experimental ?? values observed previously in other SCO materials. The phonon contribution, ??{sup phon}(HS ? LS), determined within a lattice dynamics approach, dominates over the clamped nuclei term, ??{sup ?}(HS ? LS), and is in turn dominated by the low-frequency translational motions of Cs{sup +} cations within the cubic voids of the Fe[Cr(CN){sub 6}]{sup ?} framework. The Cs{sup +} translational modes couple strongly to the large unit cell volume change occurring through the SCO transition. PBAs and associated metal-organic frameworks emerge as a potentially fruitful class of materials in which to search for SCO transitions associated with large changes in dielectric response and other macroscopic properties.

  6. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  7. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  8. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  9. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  10. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  11. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  12. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  13. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  14. The LWA1 Radio Telescope S.W. Ellingson, G.B. Taylor, J. Craig, J. Hartman, J. Dowell, C.N. Wolfe, T.E. Clarke, B.C. Hicks, N.E.

    E-Print Network [OSTI]

    Ellingson, Steven W.

    The LWA1 Radio Telescope S.W. Ellingson, G.B. Taylor, J. Craig, J. Hartman, J. Dowell, C.N. Wolfe, Member, IEEE, J. Hartman, J. Dowell, C.N. Wolfe, Student Member, IEEE, T.E. Clarke, B.C. Hicks, Member, Blacksburg, VA 24061 USA (e-mail: ellingson@vt.edu). G.B. Taylor, J. Craig, J. Dowell, L. J Rickard, and F

  15. SF6432-CN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    contract during the payroll period has been paid the full weekly wages earned, without rebate, either directly or indirectly, and that no deductions have been made either directly...

  16. Spatialpatternsofhomeoboxgene expressioninthedevelopingmammalianCN$

    E-Print Network [OSTI]

    Stern, Claudio

    Antennapedia and the human gene HHo. c10 c~rf- fer by only three of the terminal 53 amino acids4. An editorial

  17. CnLrJGD

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co -VANaval ,, *' ;x-L* d! CTy,: y; ,

  18. SF6432-CN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II) byMultidayAlumni > The EnergyRyanPhysics6/14/114/2015)

  19. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  20. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  1. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  2. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  3. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  4. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  5. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  6. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  7. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  8. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  9. The effect of irradiation with electrons on the electrical parameters of Hg{sub 3}In{sub 2}Te{sub 6}

    SciTech Connect (OSTI)

    Grushka, O. G., E-mail: semicon-dpt@chnu.edu.ua [Fedkovich Chernovtsy National University (Ukraine); Maslyuk, V. T. [Ukrainian Academy of Sciences, Institute of Electron Physics (Ukraine); Chupyra, S. M.; Mysliuk, O. M.; Bilichuk, S. V.; Zabolotskiy, I. I. [Fedkovich Chernovtsy National University (Ukraine)

    2012-03-15

    The results of studying the electrical properties of Hg{sub 3}In{sub 2}Te{sub 6} crystals irradiated with electrons with the energy E{sub e} = 18 MeV and the dose D = 4 Multiplication-Sign 10{sup 16} cm{sup -2} are reported. It is shown that, irrespective of the charge-carrier concentration in the initial material, the Hg{sub 3}In{sub 2}Te{sub 6} samples acquire the charge-carrier concentration (1.6-1.8) Multiplication-Sign 10{sup 13} cm{sup -3} after irradiation. The phenomenon of Fermi level pinning in an irradiated material is discussed. The initial charge-carrier concentration, which remains virtually unchanged after irradiation and which ensures the high radiation resistance of Hg{sub 3}In{sub 2}Te{sub 6} crystals, corresponds to a compensated material, similar to an intrinsic semiconductor at T > 260 K.

  10. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  11. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  12. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  13. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  14. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  15. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  16. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  17. Identification and decay of the 0.48 ms 13/2{sup +} isomer in {sup 181}Hg

    SciTech Connect (OSTI)

    Andreyev, A. N.; Antalic, S.; Saro, S.; Ackermann, D.; Comas, V. F.; Heinz, S.; Heredia, J. A.; Hessberger, F. P.; Khuyagbaatar, J.; Kojouharov, I.; Kindler, B.; Lommel, B.; Mann, R.; Cocolios, T. E.; Elseviers, J.; Huyse, M.; Duppen, P. Van; Venhart, M.; Franchoo, S.; Hofmann, S.

    2009-10-15

    A new isomer with a half-life of 0.48(2) ms was identified in the nuclide {sup 181}Hg, which was produced in the complete fusion reaction {sup 40}Ca+{sup 144}Sm{yields}{sup 184}Pb* at the velocity filter SHIP (GSI, Darmstadt). The isomeric state was tentatively assigned a spin-parity of 13/2{sup +}. We propose that this isomer de-excites by a yet unobserved low-energy, strongly converted {gamma}-ray transition, followed by a newly identified cascade composed of a 90.3 keV M1 and a 71.4 keV E2 {gamma}-ray transition.

  18. Measurement of a false electric dipole moment signal from $^{199}$Hg atoms exposed to an inhomogeneous magnetic field

    E-Print Network [OSTI]

    S. Afach; C. A. Baker; G. Ban; G. Bison; K. Bodek; Z. Chowdhuri; M. Daum; M. Fertl; B. Franke; P. Geltenbort; K. Green; M. G. D. van der Grinten; Z. Grujic; P. G. Harris; W. Heil; V. Hélaine; R. Henneck; M. Horras; P. Iaydjiev; S. N. Ivanov; M. Kasprzak; Y. Kermaïdic; K. Kirch; P. Knowles; H. -C. Koch; S. Komposch; A. Kozela; J. Krempel; B. Lauss; T. Lefort; Y. Lemière; A. Mtchedlishvili; O. Naviliat-Cuncic; J. M. Pendlebury; F. M. Piegsa; G. Pignol; P. N. Prashant; G. Quéméner; D. Rebreyend; D. Ries; S. Roccia; P. Schmidt-Wellenburg; N. Severijns; A. Weis; E. Wursten; G. Wyszynski; J. Zejma; J. Zenner; G. Zsigmond

    2015-08-03

    We report on the measurement of a Larmor frequency shift proportional to the electric-field strength for $^{199}{\\rm Hg}$ atoms contained in a volume permeated with aligned magnetic and electric fields. This shift arises from the interplay between the inevitable magnetic field gradients and the motional magnetic field. The proportionality to electric-field strength makes it apparently similar to an electric dipole moment (EDM) signal, although unlike an EDM this effect is P- and T-conserving. We have used a neutron magnetic resonance EDM spectrometer, featuring a mercury co-magnetometer and an array of external cesium magnetometers, to measure the shift as a function of the applied magnetic field gradient. Our results are in good agreement with theoretical expectations.

  19. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  20. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  1. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  2. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  3. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  4. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  5. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  6. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  7. Improved synthesis and crystal structure of the flexible pillared layer porous coordination polymer: Ni(1,2-bis(4-pyridyl)ethylene)[Ni(CN)(4)

    SciTech Connect (OSTI)

    Wong-Ng, W.; Culp, J. T.; Chen, Y. S.; Zavalij, P.; Espinal, L.; Siderius, D. W.; Allen, A. J.; Scheins, S Matranga, C

    2013-04-04

    This paper reports our synthesis of flexible coordination polymer, Ni(L)[Ni(CN){sub 4}], (L = 1,2-bis(4- pyridyl)ethylene (nicknamed bpene)), and its structural characterization using synchrotron single crystal X-ray diffraction. The structure of the purplish crystals has been determined to be monoclinic, space group P2{sub 1}/m, a = 13.5941(12) Å, b = 14.3621(12) Å, c = 14.2561(12) Å, {beta} = 96.141(2){degrees|, V = 2767.4(4) Å{sup 3}, Z = 4, D{sub c} = 1.46 g cm{sup -1}. Ni(bpene)[Ni(CN){sub 4}] assumes a pillared layer structure with layers defined by Ni[Ni(CN){sub 4}]{sub n} nets and bpene ligands acting as pillars. With the present crystallization technique which involves the use of concentrated ammonium hydroxide solution and dimethyl sulfoxide (DMSO), disordered free bpene ligands and solvents of crystallization (DMSO and water molecules) occupy the pores, resulting in a formula of Ni(bpene)[Ni(CN){sub 4}](1/2)bpene.DMSO.2H{sub 2}O, or Ni{sub 2}N{sub 7}C{sub 24}H{sub 2}.5SO{sub 3}. Without the inclusion of free bpene ligands and solvent molecules, the free volume is approximately 61% of the total volume; this free volume fraction is reduced to 50% with the free ligands present. Pores without the free ligands were found to have a local diameter of 5.7 Å and a main aperture of 3.5 Å. Based on the successful crystal synthesis, we also devised a new bulk synthetic technique which yielded a polycrystalline material with a significantly improved CO{sub 2} uptake as compared to the originally reported powder material. The improved synthetic technique yielded a polycrystalline material with 40% higher CO{sub 2} uptake compared to the previously reported powder material. An estimated 14.4 molecules of CO{sub 2} per unit cell was obtained.

  8. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  9. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  10. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  11. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  12. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  13. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  14. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  15. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  16. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  17. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  18. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  19. 2 00 9 T H I E M E S T U T T GA R T N E W Y O R K882 Metal-Catalyzed

    E-Print Network [OSTI]

    Charette, André

    = 97:3 N O CN O 68% yield 86% ee dr = 97:3 O N O CN F 68% yield 98% ee dr = 98:2 F F F F N O 71% yield

  20. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  1. SNS Target Test Facility: Prototype Hg Operations and Remote Handling Tests P. T. Spampinato, T. W. Burgess, J. B. Chesser, V. B. Graves, and S.L. Schrock

    E-Print Network [OSTI]

    McDonald, Kirk

    SNS Target Test Facility: Prototype Hg Operations and Remote Handling Tests P. T. Spampinato, T. W Neutron Source, Target Test Facility is a full-scale replica of the mercury-target flow loop prototypic target, and numerous pressure sensors. Outside of the loop enclosure, tests were done on a new

  2. Results of Hg speciation testing on 3Q15 tank 50, salt solution feed tank (SSFT), and solvent hold tank (SHT) materials

    SciTech Connect (OSTI)

    Bannochie, C.

    2015-08-13

    The Savannah River National Laboratory (SRNL) was tasked with preparing and shipping samples for Hg speciation by Eurofins Frontier Global Sciences, Inc. in Seattle, WA on behalf of the Savannah River Remediation (SRR) Mercury Task Team. The results are documented in this report.

  3. Imaging ion-molecule reactions: Charge transfer and C-N bond formation in the C{sup +}+ NH{sub 3} system

    SciTech Connect (OSTI)

    Pei, Linsen; Farrar, James M. [Department of Chemistry, University of Rochester, Rochester, New York 14627 (United States)

    2012-05-28

    The velocity mapping ion imaging method is applied to the ion-molecule reactions occurring between C{sup +} and NH{sub 3}. The velocity space images are collected over the relative collision energy range from 1.5 to 3.3 eV, allowing both product kinetic energy distributions and angular distributions to be obtained from the data. The charge transfer process appears to be direct, dominated by long-range electron transfer that results in minimal deflection of the products. The product kinetic energy distributions are consistent with a process dominated by energy resonance. The kinetic energy distributions for C-N bond formation appear to scale with the total available energy, providing strong evidence that energy in the [CNH{sub 3}]{sup +} precursor to products is distributed statistically. The angular distributions for C-N bond formation show pronounced forward-backward symmetry, as expected for a complex that resembles a prolate symmetric top decaying along its symmetry axis.

  4. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  5. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  6. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  7. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  8. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  9. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  10. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  11. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  12. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  13. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  14. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  15. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  16. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  17. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  18. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  19. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  20. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  1. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  2. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  3. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  4. Population of low-seniority isomeric states of {sup 206}Hg by two-proton knockout reactions at relativistic energies

    SciTech Connect (OSTI)

    Simpson, E. C.; Tostevin, J. A.; Podolyak, Zs.; Regan, P. H.; Steer, S. J. [Department of Physics, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

    2009-12-15

    We consider calculations of direct two-proton removal reactions from a relativistic-energy {sup 208}Pb beam incident on a {sup 9}Be target, leading to the population of two-proton-hole isomeric configurations in {sup 206}Hg. The calculated 5{sup -} and 10{sup +} isomeric state population ratios of 18.8% and 4.7%, respectively, are in fair agreement with the values deduced experimentally (21.9{sub -2.9}{sup +1.2}% and 3.1{sub -1.2}{sup +1.0}%); however, the high density of final states in this case complicates the prediction of isomeric ratios for those states fed by unobserved prompt {gamma}-ray cascades. We also consider and quantify the effects of selection of events, according to the longitudinal momenta of the reaction residues, on the measured isomeric ratios for high-spin final states and, hence, of the potential to exploit such sensitivity to gain further insight into the reaction mechanism.

  5. Results of Hg speciation testing on MCU strip effluent hold tank (SEHT) and decontaminated salt solution hold tank (DSSHT) materials

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2015-09-17

    The Savannah River National Laboratory (SRNL) was tasked with preparing and shipping samples for Hg speciation by Eurofins Frontier Global Sciences, Inc. in Seattle, WA on behalf of the Savannah River Remediation (SRR) Mercury Task Team.i,ii The tenth shipment of samples was designated to include Modular Caustic Side Solvent Extraction Unit (MCU) Strip Effluent Hold Tank (SEHT) and MCU Decontaminated Salt Solution Hold Tank (DSSHT) materials from processing Salt Batch 7b. The MCU SEHT (MCU-15-722) and DSSHT (MCU-15-709) samples were pulled on June 15, 2015. All MCU samples were received at SRNL on June 16, 2015. The DSSHT sample was moved the same day to refrigeration, while the SEHT sample was placed in the Shielded Cells. On July 9, 2015 it was opened and an aliquot diluted 1:100 with Eurofins deionized water and a portion of the diluted sample transferred to a Teflon® bottle prior to moving it to refrigeration that same day. All samples were kept in the dark and refrigerated until final dilutions were prepared for shipment to Eurofins.

  6. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  7. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  8. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  9. Local magnetism in the molecule-based metamagnet [Ru2(O2CMe)4]3[Cr(CN)6] probed with implanted muons

    SciTech Connect (OSTI)

    Lancaster, T.; Pratt, F. L.; Blundell, S. J.; Steele, Andrew J.; Baker, Peter J.; Wright, Jack D.; Fishman, Randy Scott; Miller, Joel S.

    2011-01-01

    We present a muon-spin relaxation study of local magnetism in the molecule-based metamagnet [Ru2(O2CMe)4]3[Cr(CN)6]. We observe magnetic order with TN = 33 K, although above 25 K the sublattice spins become less rigid and a degree of static magnetic disorder is observed. The comparison of measurements in applied magnetic field with simulations allows us to understand the origin of the muon response across the metamagnetic transition and to map out the phase diagram of the material. Applied hydrostatic pressures of up to 6 kbar lead to an increase in the local magnetic field along with a complex change in the internal magnetic field distribution.

  10. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  11. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  12. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  13. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  14. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  15. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  16. Relationship between textural properties, fly ash carbons, and Hg capture in fly ashes derived from the combustion of anthracitic pulverized feed blends

    SciTech Connect (OSTI)

    Isabel Surez-Ruiz; Jose B. Parra

    2007-08-15

    In this work, the textural properties of a series of whole anthracitic-derived fly ashes sampled in eight hoppers from the electrostatic precipitators and their sized fractions (from {gt}150 to {lt}25 {mu}m) are investigated. Data from N{sub 2} adsorption isotherms at 77 K, helium density, and mercury porosimetry have contributed to establish a relationship between the Brunauer-Emmett-Teller (BET) surface areas, VTOT, porosity, carbon content (the type of fly ash carbons), and Hg retention in these fly ashes. The unburned carbons in these ashes are macroporous materials, and they are different from the carbons in fly ashes from classes C and F (the latter derived from the combustion of bituminous coals) and show different textural properties. These ashes represent the end member of the fly ash classes C and F with respect to certain textural properties. Although the BET surface area and VTOT values for the studied samples are the lowest reported, they increase with the increase in carbon content, anisotropic carbon content, and particle size of the ashes. Thus, a positive relationship between all these parameters and Hg capture by the coarser ash fractions was found. The finest fraction of carbons ({lt}25 {mu}m) represented an exception. Although it makes a significant contribution to the total carbon of the whole fly ashes and shows relatively higher surface areas and VTOT values, its Hg concentration was found to be the lowest. This suggests that the type of unburned carbons in the finest fraction and/or other adsorption mechanisms may play a role in Hg concentration. Because the textural properties of anisotropic carbons depend on their subtype and on their origin, the need for its differentiation has been evidenced. 54 refs., 8 figs., 3 tabs.

  17. Weak antilocalization effect in LPE-grown p-Hg0.8Cd0.2Te thin film and the evidence of Te-precipitation

    E-Print Network [OSTI]

    R. Yang; L. M. Wei; G. L. Yu

    2010-06-07

    The weak antilocalization effect is observed in a p-type Hg0.8Cd0.2Te thin film with thickness ~10 micrometers. Based on the analysis of composition, carrier species and excellent fitting of data with a model concerning weak antilocalization effect in Te crystal, the most plausible explanation is that the observed weak antilocalization effect is caused by Te-precipitation.

  18. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  19. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  20. Stellar (n,{gamma}) cross sections of p-process isotopes. II. {sup 168}Yb, {sup 180}W, {sup 184}Os, {sup 190}Pt, and {sup 196}Hg

    SciTech Connect (OSTI)

    Marganiec, J.; Dillmann, I.; Pardo, C. Domingo; Kaeppeler, F.; Walter, S.

    2010-09-15

    The neutron-capture cross sections of {sup 168}Yb, {sup 180}W, {sup 184}Os, {sup 190}Pt, and {sup 196}Hg have been measured by means of the activation technique. The samples were irradiated in a quasistellar neutron spectrum of kT=25 keV, which was produced at the Karlsruhe 3.7-MV Van de Graaff accelerator via the {sup 7}Li(p,n){sup 7}Be reaction. Systematic uncertainties were investigated in repeated activations with different samples and by variation of the experimental parameters, that is, irradiation times, neutron fluxes, and {gamma}-ray counting conditions. The measured data were converted into Maxwellian-averaged cross sections at kT=30 keV, yielding 1214{+-}61, 624{+-}54, 590{+-}43, 511{+-}46, and 201{+-}11 mb for {sup 168}Yb, {sup 180}W, {sup 184}Os, {sup 190}Pt, and {sup 196}Hg, respectively. The present results either represent first experimental data ({sup 168}Yb, {sup 184}Os, and {sup 196}Hg) or could be determined with significantly reduced uncertainties ({sup 180}W and {sup 190}Pt). These measurements are part of a systematic study of stellar (n,{gamma}) cross sections of the stable p isotopes.

  1. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  2. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  3. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  4. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  5. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  6. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  7. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  8. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  9. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  10. A hole modulator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Zabu Kyaw, Wei Liu, Yun Ji, Liancheng Wang, Swee Tiam Tan, Xiao Wei Sun, and Hilmi Volkan

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    well on optical power of light-emitting diodes Appl. Phys. Lett. 96, 051113 (2010); 10-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which

  11. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  12. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  13. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  14. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  15. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  16. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE, Westborough, MA (United States); Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  17. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  18. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m? · cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  19. Multi-Pollutant Emissions Control: Pilot Plant Study of Technologies for Reducing Hg, SO3, NOx and CO2 Emissions

    SciTech Connect (OSTI)

    Michael L. Fenger; Richard A. Winschel

    2005-08-31

    A slipstream pilot plant was built and operated to investigate technology to adsorb mercury (Hg) onto the existing particulate (i.e., fly ash) by cooling flue gas to 200-240 F with a Ljungstrom-type air heater or with water spray. The mercury on the fly ash was then captured in an electrostatic precipitator (ESP). An alkaline material, magnesium hydroxide (Mg(OH){sub 2}), is injected into flue gas upstream of the air heater to control sulfur trioxide (SO{sub 3}), which prevents acid condensation and corrosion of the air heater and ductwork. The slipstream was taken from a bituminous coal-fired power plant. During this contract, Plant Design and Construction (Task 1), Start Up and Maintenance (Task 2), Baseline Testing (Task 3), Sorbent Testing (Task 4), Parametric Testing (Task 5), Humidification Tests (Task 6), Long-Term Testing (Task 7), and a Corrosion Study (Task 8) were completed. The Mercury Stability Study (Task 9), ESP Report (Task 11), Air Heater Report (Task 12) and Final Report (Task 14) were completed. These aspects of the project, as well as progress on Public Outreach (Task 15), are discussed in detail in this final report. Over 90% mercury removal was demonstrated by cooling the flue gas to 200-210 F at the ESP inlet; baseline conditions with 290 F flue gas gave about 26% removal. Mercury removal is sensitive to flue gas temperature and carbon content of fly ash. At 200-210 F, both elemental and oxidized mercury were effectively captured at the ESP. Mg(OH){sub 2} injection proved effective for removal of SO{sub 3} and eliminated rapid fouling of the air heater. The pilot ESP performed satisfactorily at low temperature conditions. Mercury volatility and leaching tests did not show any stability problems. No significant corrosion was detected at the air heater or on corrosion coupons at the ESP. The results justify larger-scale testing/demonstration of the technology. These conclusions are presented and discussed in two presentations given in July and September of 2005 and are included in Appendices E and F.

  20. Theory of weak localization in ferromagnetic (Ga,Mn)As 

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  1. Low-temperature magnetization of (Ga,Mn) As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01

    the semiphenomenological virtual crystal model the valence band holes experience a mean-field hMF =JpdNMn?S , and the band Hamiltonian can then be written as H? MF=H? KL?B?+hMFs?z, where H? KL?B? is the B-dependent six- band Kohn-Luttinger Hamiltonian of the GaAs host...

  2. Ohmic contacts for high-temperature GaP devices 

    E-Print Network [OSTI]

    Van der Hoeven, Willem Bernard

    1981-01-01

    in Table II, heat treatments have also been made by laser. One of the earliest papers that describe laser annealing to obtain ohmic contacts to GaP appeared in 1974 (20] . In this paper, Pounds, Saifi, and Hahm reported to have obtained ohmic contacts...

  3. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  4. Nanoscale GaAs metalsemiconductormetal photodetectors fabricated using nanoimprint lithography

    E-Print Network [OSTI]

    ­V) characteristics of the contacts are very sensi- tive to the surface states and defects. In this letter, we report mold with interdigited fin- gers was first created on a silicon substrate. Next, a layer of polymethylmethancrylate PMMA was spun on a semi- insulating SI GaAs substrate. Before imprinting, both the mold

  5. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  6. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  7. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  8. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  9. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  10. Intrinsic vs. extrinsic inelastic scattering contributions in kappa-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br - transport measurements under hydrostatic pressure.

    SciTech Connect (OSTI)

    Strack, C.; Akinci, C.; Paschenko, V.; Wolf, B.; Uhrig, E.; Assmus, W.; Schreuer, J.; Wiehl, L.; Schlueter, J.; Wosnitza, J.; Schweitzer, D.; Lang , M.; Materials Science Division; J.W. Goethe-Universitat Frankfurt; Inst.fur Festkorperphysik; Univ. Stuttgart

    2006-12-05

    Interlayer-resistivity measurements have been performed on a variety of single crystals of the quasi-two-dimensional organic superconductor {kappa}-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br. These crystals, which have been synthesized along two somewhat different routes, reveal strongly sample-dependent resistivity profiles: while the majority of samples shows a more or less pronounced {rho}(T) maximum around 90 K with a semiconducting behavior above, some crystals remain metallic at all temperatures T {le} 300 K. In the absence of significant differences in the crystals' structural parameters and chemical compositions, as proved by high-resolution X-ray and electron-probe-microanalysis, these results indicate that real structure phenomena, i.e. disorder and/or defects, may strongly affect the inelastic scattering. Comparative resistivity measurements under He-gas pressure on two crystals with strongly differing {rho}(T) profiles indicate that these additional, sample-dependent scattering contributions are characterized by an extraordinarily strong pressure response which is highly non-monotonous as a function of temperature. No correlations have been found between the strength of these scattering contributions and other characteristic properties such as the glass transition at T{sub g} = 77 K, the temperature T* {approx} 40 K, where the temperature dependence of the resistivity changes rather abruptly, or the superconducting transition temperature T{sub c}.

  11. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  12. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs

    E-Print Network [OSTI]

    Fan, Kebin

    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ?20–160??kV/cm drives intervalley scattering. ...

  13. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  14. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  15. Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on

    E-Print Network [OSTI]

    California at Davis, University of

    Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on and Color, Canada · Lorne Whitehead, Canada #12;Inves&ga&ng the Trade-Off between Luminous

  16. Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

    E-Print Network [OSTI]

    2006-01-01

    Characterization of NIR InGaAs imager arrays for the JDEMapplications. Keywords: NIR, InGaAs, astronomy, low-1.7um band Near Infrared (NIR) focal plane mosaic with high

  17. Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces

    E-Print Network [OSTI]

    LeBeau, James; Hu, Qi O.; Palmstrom, Christopher; Stemmer, Susanne

    2008-01-01

    line pro?le across the interface along the line indicated inHAADF images of the GaAs/Fe interface along ?a? ?11 0? GaAsindicates the location of an interface step. Arrows in ?b?

  18. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  19. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Tomás

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species—hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?°C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  20. High 400?°C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?°C. Even at 400?°C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  1. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    quantum wells (QW)s,1) and InAs quantum dots at 1.3 mm2) have brought about the commercialization of Ga differential quantum efficiency, T-zero and far field as a function of stripe width. # 2009 The Japan Society offer a number of advantages over their InP counterparts, namely the use of larger substrates (>3 in

  2. Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1

    E-Print Network [OSTI]

    Lu, Wei

    quantum dots by low-energy ion sputtering on a surface has been reported in several semiconductor sys quantum dots on the surface. The mechanism involves the balance between roughening and smoothing actions], Ge [10], as well as a variety of III­V compounds (GaSb [11], InP [12], and InSb [13]) can form

  3. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  4. Method of controlling the mercury vapor pressure in a photo-chemical lamp or vapor filter used for Hg[sup 196] enrichment

    DOE Patents [OSTI]

    Grossman, M.W.

    1993-02-16

    The present invention is directed to a method of eliminating the cold spot zones presently used on Hg[sup 196] isotope separation lamps and filters by the use of a mercury amalgams, preferably mercury - indium amalgams. The use of an amalgam affords optimization of the mercury density in the lamp and filter of a mercury enrichment reactor, particularly multilamp enrichment reactors. Moreover, the use of an amalgam in such lamps and/or filters affords the ability to control the spectral line width of radiation emitted from lamps, a requirement for mercury enrichment.

  5. Method of controlling the mercury vapor pressure in a photo-chemical lamp or vapor filter used for Hg.sup.196 enrichment

    DOE Patents [OSTI]

    Grossman, Mark W. (Belmont, MA)

    1993-01-01

    The present invention is directed to a method of eliminating the cold spot zones presently used on Hg.sup.196 isotope separation lamps and filters by the use of a mercury amalgams, preferably mercury - indium amalgams. The use of an amalgam affords optimization of the mercury density in the lamp and filter of a mercury enrichment reactor, particularly multilamp enrichment reactors. Moreover, the use of an amalgam in such lamps and/or filters affords the ability to control the spectral line width of radiation emitted from lamps, a requirement for mercury enrichment.

  6. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used

  7. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  8. DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE

    E-Print Network [OSTI]

    Sites, James R.

    i DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT Submitted ENTITLED `ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT' BE ACCEPTED(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT The demand for alternative sources of energy is rapidly

  9. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  10. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  11. Near perfect solar absorption in ultra-thin-film GaAs photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei voltage of GaAs solar cells. The current world record for high efficiency solar cells is held by thin ultra-thin (GaAs in low-cost solar cells. However, this reduction in the volume

  12. ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission

    E-Print Network [OSTI]

    Polman, Albert

    a non-concentrating system with limited emission angle in a thin, light trapping GaAs solar cellORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 of a high-quality GaAs solar cell is a feasible route to achieving power conversion efficiencies above 38

  13. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  14. 3/11/08 3:35 PMk-Statistic Page 1 of 10http://bbs.sachina.pku.edu.cn/stat/math_world/math/k/k010.htm

    E-Print Network [OSTI]

    Masci, Frank

    3/11/08 3:35 PMk-Statistic Page 1 of 10http://bbs.sachina.pku.edu.cn/stat/math_world/math/k/k010 the relationships (9) (10) #12;3/11/08 3:35 PMk-Statistic Page 2 of 10http://bbs.sachina) The second Moment (sample Standard Deviation) is (16) and the expectation value is #12;3/11/08 3:35 PMk

  15. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  16. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

    SciTech Connect (OSTI)

    Sundaram, S.; El Gmili, Y.; Bonanno, P. L. [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, R.; Li, X.; Voss, P. L.; Ougazzaden, A. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Pantzas, K.; Patriarche, G. [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Orsal, G.; Salvestrini, J. P., E-mail: salvestr@metz.supelec.fr [Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz (France); Troadec, D. [Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille (France); Cai, Z.-H. [Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-10-28

    Uniform, dense, single-phase, 150?nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150?nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535?nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

  17. Near-Zero Emissions Oxy-Combustion Flue Gas Purification Task 2: SOx/Nox/Hg Removal for High Sulfur Coal

    SciTech Connect (OSTI)

    Nick Degenstein; Minish Shah; Doughlas Louie

    2012-05-01

    The goal of this project is to develop a near-zero emissions flue gas purification technology for existing PC (pulverized coal) power plants that are retrofitted with oxy-combustion technology. The objective of Task 2 of this project was to evaluate an alternative method of SOx, NOx and Hg removal from flue gas produced by burning high sulfur coal in oxy-combustion power plants. The goal of the program was not only to investigate a new method of flue gas purification but also to produce useful acid byproduct streams as an alternative to using a traditional FGD and SCR for flue gas processing. During the project two main constraints were identified that limit the ability of the process to achieve project goals. 1) Due to boiler island corrosion issues >60% of the sulfur must be removed in the boiler island with the use of an FGD. 2) A suitable method could not be found to remove NOx from the concentrated sulfuric acid product, which limits sale-ability of the acid, as well as the NOx removal efficiency of the process. Given the complexity and safety issues inherent in the cycle it is concluded that the acid product would not be directly saleable and, in this case, other flue gas purification schemes are better suited for SOx/NOx/Hg control when burning high sulfur coal, e.g. this project's Task 3 process or a traditional FGD and SCR.

  18. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  19. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  20. AlGaAs-On-Insulator Nonlinear Photonics

    E-Print Network [OSTI]

    Pu, Minhao; Semenova, Elizaveta; Yvind, Kresten

    2015-01-01

    The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm i...

  1. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  2. Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    to be further improved in order for the high- power LEDs to penetrate into the consumer market of gen- eral to higher optical output power and external quantum efficiency, compared to the devices with p-AlGaN EBLGaN/GaN based light-emitting diodes (LEDs) possess unique advantages including high energy conversion effi

  3. The transputer based GA. SP data acquisition system

    SciTech Connect (OSTI)

    Colombo, D.; Avano, B.; DePoli, M.; Maron, G. ); Negro, A.; Parlati, G. )

    1992-04-01

    In this paper, the new data acquisition for the GA.SP detector is presented. It is a distributed system based on a network of 40 T800 and T222 transputers linked to a VME system used for histogram storage. A 100 MBit/s FDDI ring connects the system to UNIX workstations used for the experiment control, histogram display and second level data analysis.

  4. Minority-carrier properties of GaAs on silicon

    SciTech Connect (OSTI)

    Ahrenkiel, R.K.; Al-Jassim, M.M.; Dunlavy, D.J.; Jones, K.M.; Vernon, S.M.; Tobin, S.P.; Haven, V.E.

    1988-07-18

    The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

  5. Ohmic contacts to p-type Ga

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01

    resistivity was achieved by developing the Si(750A)/Pd(400A)/Zn(xA)/Pd(IOOA)/p-GaP scheme. Values of the contact resistivity in the range of 3xlO-5 to 7xlO-' nCM2 were obtained. It was found that the optimum Zn layer thickness is 30 A for the Pd and Si...

  6. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  7. Continued development of metallization for GaAs concentrator cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1988-11-01

    The objective of this work was the integration of thermally stable metallizations with a high-efficiency GaAs concentrator cell process. For p-GaAs we used a Pt-TiN-Au metallization developed under a previous Sandia Contract. For n-GaAs the best results were obtained for AuGe-TiN-Au. Baseline p/n cells with a CrAu metallization achieved efficiencies of 25.4% at 200 suns. Efficiencies were about 22% at one sun. At one sun, p/n cells with high-temperature contacts were 22.2% efficient, showing that there is no efficiency penalty with the high-temperature metallization. Development efforts on n/p cells yielded high short-circuit currents and open-circuit voltages, with both conventional and high-temperature metallizations. Thermal annealing tests showed that cells with the Pt-TiN-Au metallization were more stable than those with the baseline metallization, withstanding a 15-minute anneal at 500/degree/C with negligible efficiency degradation. 22 refs., 64 figs., 54 tabs.

  8. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect (OSTI)

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

    1998-06-01

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  9. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  10. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect (OSTI)

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)] [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuñiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France)] [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  11. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  12. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  13. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  14. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  15. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect (OSTI)

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (?-PL) and ?-PL excitation (?-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  16. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrödinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  17. Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels

    SciTech Connect (OSTI)

    Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

    2006-01-01

    This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

  18. CN ENGINEERING CHALLENGES David Ferryman

    E-Print Network [OSTI]

    Barkan, Christopher P.L.

    Railway Engineering Challenges Weakest component in track is thermite welds ­ Half the impact strength

  19. A hole accelerator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji, Liancheng Wang, Binbin Zhu, Yiping Zhang, Shunpeng Lu,

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    GaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, the effectiveness of the hole ac- celerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. VC 2014 AIP Publishing LLC. [http://dx.doi.org/10

  20. InGaN/GaN light-emitting diode with a polarization tunnel junction Zi-Hui Zhang, Swee Tiam Tan, Zabu Kyaw, Yun Ji, Wei Liu et al.

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs; accepted 29 April 2013; published online 15 May 2013) We report InGaN/GaN light-emitting diodes (LED have been devoted to boosting the optical output power and enhancing the external quantum efficiency

  1. 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

    E-Print Network [OSTI]

    Yoon, Soon Fatt

    The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) ...

  2. Graded InxGa1 xAs/GaAs 1.3 m wavelength light emitting diode structures grown with molecular beam epitaxy

    E-Print Network [OSTI]

    Graded InxGa1 xAs/GaAs 1.3 m wavelength light emitting diode structures grown with molecular beam 11 June 1997; accepted for publication 29 September 1997 In this study 1.1­1.3 m wavelength light at a lower cost. Such a technology could have an impact on the economic feasibility of fiber to the home

  3. Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

    E-Print Network [OSTI]

    Rockett, Angus

    from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation either from the higher temperature or from nitridation of all of the Si, leaving the Si3N4 in direct contact with the GaAs. © 1998 American Vacuum Society. S0734-211X 98 00302-3 I. INTRODUCTION Ga

  4. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  5. Temporally and spatially resolved photoluminescence investigation of (112{sup ¯}2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

    SciTech Connect (OSTI)

    Liu, B.; Smith, R.; Athanasiou, M.; Yu, X.; Bai, J.; Wang, T.

    2014-12-29

    By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of In{sub x}Ga{sub 1?x}N/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112{sup ¯}2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

  6. H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

    SciTech Connect (OSTI)

    Giulotto, E. Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

    2014-12-28

    The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs{sub 0.991}N{sub 0.009} wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs{sub 0.992}N{sub 0.008} wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

  7. Correlation Between Bands Structure and Magneto-Transport Properties in n-type HgTe/CdTe Superlattice with Relatively Thin CdTe Barrier

    SciTech Connect (OSTI)

    Braigue, M.; Nafidi, A.; Chaib, H.; Tirbiyine, A.; Hemine, J.; Idbaha, A.; Boulkassim, A.; El Gouti, T.; Massaq, M. [Laboratory of Condensed Matter Physics and Nanomaterials for Renewable Energy, Department of Physics, Faculty of Sciences, BP 8106 Hay Dakhla (Morocco); University Ibn Zohr, 80000 Agadir (Morocco); Talwar, Devki N. [Physics Department, Indiana University of Pennsylvania, 975 Oakland Avenue, Indiana, PA 15705 (United States); SrinivasaVinod, M. [Mechanical Engineering Department, RV College of Engineering, Bangalore - 560 059 (India)

    2011-12-26

    Theoretical calculations of the electronic properties of n-type HgTe/CdTe superlattices (SLs) in the envelope function formalism have provided a reasonable agreement with the experimental data on the magneto-transport behavior. Numerical results of the band energies E(d{sub 2}), E(k{sub z}) and E(k{sub p}) in the direction of growth and in plane of the SLs predict that the system retains semiconductor characteristics for d{sub 1}/d{sub 2} = 2.69 and d{sub 2}<10 nm. For d{sub 2} = 3.2 nm the calculated effective band gap (E{sub g}({Gamma},4.2 K) = 48 meV) suggests that the material sample is a two-dimensional modulated nanostructure and a potential candidate to be used for the far infrared detection applications.

  8. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M.; Mika, A.; S?k, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  9. Distribution of bismuth atoms in epitaxial GaAsBi

    SciTech Connect (OSTI)

    Sales, David [Universidad de Cadiz, Spain; Guerreo, E. [Universidad de Cadiz, Spain; Rodrigo, J.F. [Universidad de Cadiz, Spain; Galindo, P.L. [Universidad de Cadiz, Spain; Yanez, A. [University of Cadiz, Spain; Shafi, M. [University of Nottingham, Nottingham UK; Khatab, A. [University of Nottingham, Nottingham UK; Mari, R.H. [University of Nottingham, Nottingham UK; Henini, M. [University of Nottingham, Nottingham UK; Novikov, S. [University of Nottingham, Nottingham UK; Chisholm, Matthew F [ORNL; Molina, S.I. [Universidad de Cadiz, Spain

    2011-01-01

    The distribution of Bi atoms in epitaxial GaAs{sub (1-x)}Bi{sub x} is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material.

  10. Structure, transport and thermal properties of UCoGa

    SciTech Connect (OSTI)

    Purwanto, A.; Robinson, R.A.; Prokes, K.

    1994-04-01

    By means of neutron powder diffraction, we find that UCoGa crystallizes in the hexagonal ZrNiAl structure and orders ferromagnetically at low temperatures with magnetic moments stacked along the c axis. The magnetic-ordering temperature is reflected in anomalies in the temperature dependencies of the electrical resistivity and the specific heat at Tc = 47 K. Furthermore, the strong anisotropy in the electrical resistivity for i {parallel} c and i {perpendicular} c indicates a significant contribution of the magnetic anisotropy to the electrical resistivity.

  11. Enhanced Magnetism of Fe3O4 Nanoparticles with Ga Doping

    SciTech Connect (OSTI)

    Pool, V. L.; Klem, M. T.; Chorney, C. L.; Arenholz, E.; Idzerda, Y.U.

    2010-10-22

    Magnetic (Ga{sub x}Fe{sub 1-x}){sub 3}O{sub 4} nanoparticles with 5%-33% gallium doping (x = 0.05-0.33) were measured using x-ray absorption spectroscopy and x-ray magnetic circular dichroism to determine that the Ga dopant is substituting for Fe{sub 3+} as Ga{sub 3+} in the tetrahedral A-site of the spinel structure, resulting in an overall increase in the total moment of the material. Frequency-dependent alternating-current magnetic susceptibility measurements showed these particles to be weakly interacting with a reduction of the cubic anisotropy energy term with Ga concentration. The element-specific dichroism spectra show that the average Fe moment is observed to increase with Ga concentration, a result consistent with the replacement of A-site Fe by Ga.

  12. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology

    SciTech Connect (OSTI)

    Vernon, S.M. )

    1993-04-01

    This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

  13. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  14. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important contributor to the global energy demand by the mid-21st-century. Cu(In,Ga)Se2 (CIGS) solar cells, which haveDISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler

  15. Investigation of photoexcited parallel conduction in GaAs/AlGaAs heterostructures in the quantum limit 

    E-Print Network [OSTI]

    Kobiela, Pawel Stanislaw

    1986-01-01

    conduction paths, one in the 2-DEG (medium 1) and the second an another medium (like AlGaAs), the conductivity tensor can be expressed as o' = rri + ap. Further analysis can be carried out by considering two separate limits: low and high magnetic fields.... The interval between the current pulses depended on the temperature and varied from 2-3 sec. at 10 K to about 1 min. at 15 mK. For each magnetic field scan between 0 and 7. 5 T about 500 readings were taken for l&oth current directions. As mentioned before...

  16. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  17. Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

    E-Print Network [OSTI]

    Robinson, SJ

    2008-01-01

    Low-Temperature Charge Transport in Ga-Acceptor Nanowiresare highly nonlinear at low temperatures, and a thresholdmetallic conductance at low temperatures could be achieved

  18. Vacancy defects in as-grown and neutron irradiated GaP studied by positrons

    SciTech Connect (OSTI)

    Dlubek, G.; Bruemmer, O.; Polity, A.

    1986-08-18

    Positron lifetime and Doppler-broadening measurements have been used to study vacancy defects in n-italic-type GaP. Vacancies in the P sublattice with a concentration of some 10/sup 17/ cm/sup -3/ were observed in as-grwon GaP. The vacancies disappear during annealing at 500--800 /sup 0/C. In neutron-irradiated GaP positrons are trapped by Ga vacancies which anneal out in two stages situated at 300--550 /sup 0/C and 550--700 /sup 0/C.

  19. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  20. Raman scattering in InAs/AlGaAs quantum dot nanostructures E. Giulotto,1,a

    E-Print Network [OSTI]

    As upper CL UCL with the same composition of LCL, and a 10 nm thick GaAs cap layer. Buffers and LCLs were

  1. Antimonide-Based Long-Wavelength Lasers on GaAs Substrates

    SciTech Connect (OSTI)

    KLEM,JOHN F.; Blum, O.

    2000-08-17

    We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 {micro}m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 {micro}m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 {micro}m with a room-temperature threshold current density as low as 535 A/cm{sup 2}. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 {micro}m have been obtained with room-temperature threshold current densities of 120 A/cm{sup 2}, and devices operating at 1.29 {micro}m have displayed thresholds as low as 375 A/cm{sup 2}. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.

  2. Interface Reactions and Electrical Characteristics of Au/GaSb Contacts

    SciTech Connect (OSTI)

    H. Ehsani; R.J. Gutmann; G.W. Charache

    2000-07-07

    The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

  3. A comparison of the structure and localized magnetism in Ce{sub 2}PdGa{sub 12} with the heavy fermion CePdGa{sub 6}

    SciTech Connect (OSTI)

    Macaluso, Robin T. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Millican, Jasmine N. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Nakatsuji, Satoru [Department of Physics, Kyoto University, Kyoto, Japan 606-8502 (Japan); Lee, Han-Oh [Department of Physics, University of California, Davis, CA 95616 (United States); Carter, B. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Moreno, Nelson O. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Fisk, Zachary [Department of Physics, University of California, Davis, CA 95616 (United States); Chan, Julia Y. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States)]. E-mail: jchan@lsu.edu

    2005-11-15

    Single crystals of Ce{sub 2}PdGa{sub 12} have been synthesized in Ga flux and characterized by X-ray diffraction. This compound crystallizes in the tetragonal P4/nbm space group, Z=2 with lattice parameters of a=6.1040(2)A and c=15.5490(6)A. It shows strongly anisotropic magnetism and orders antiferromagnetically at T{sub N}{approx}11K. A field-induced metamagnetic transition to the ferromagnetic state is observed below T{sub N}. Structure-property relationships with the related heavy-fermion antiferromagnet CePdGa{sub 6} are discussed.

  4. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

    SciTech Connect (OSTI)

    Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

    2014-02-03

    This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

  5. InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

    SciTech Connect (OSTI)

    Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

    2010-10-14

    The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

  6. InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

    1998-11-24

    The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

  7. Prof. Dr. Uwe Holtz Universitt Bonn Am Hofgarten 15D -53113 Bonn UHoltz@aol.com www.uni-bonn.de/~uholtz1 OECD (Hg.): DAC Peer Review Germany, Paris 2006.4

    E-Print Network [OSTI]

    Franz, Sven Oliver

    , India,39 Indonesia, Egypt and Turkey. Germany does not intend to focus only on the poorest countries40.uni-bonn.de/~uholtz1 6.4.072 3 OECD (Hg.): DAC Peer Review Germany, Paris 2006.4 (www.oecd.org/dataoecd/54 of poorer countries but need for greater strategic selectivity8 9 Germany has never stated a preference

  8. A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes

    SciTech Connect (OSTI)

    Moslehi Milani, N.; Mohadesi, V.; Asgari, A.

    2015-02-07

    A broadband superluminescent light emitting diode with In{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation power. Two rate equations corresponding to MQW active region and separate confinement heterostructures layer are solved self-consistently with no-k selection wavelength dependent gain and quasi-Fermi level functions. Our results show that the superluminescence started in a current of ?120?mA (?7.5?kA/Cm{sup 2}) at 300?K. The range of peak emission wavelengths for different currents is 423–426?nm and the emission bandwidth is ?5?nm in the superluminescence regime. A maximum light output power of 7.59 mW is obtained at 600?mA and the peak modal gain as a function of current indicates logarithmic behavior. Also, the comparison of our calculated results with published experimental data is shown to be in good agreement.

  9. Improved photoluminescence of InGaAsN,,In...GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

    E-Print Network [OSTI]

    Gilchrist, James F.

    for Photonics, Department of Electrical Computer Engineering, University of Wisconsin­Madison, 1415 Engineering are the hydride sources of AsH3 and PH3 . The trimethyl precursors of gal- lium Ga , aluminum Al , and indium

  10. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

    SciTech Connect (OSTI)

    Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

    2010-07-15

    Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

  11. Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells X. H. Li,1 P. C trapping in thin-film solar cells via engineered surface morphology or device geometry, scattering,10 In this paper, we describe and demonstrate thin-film quantum-well solar cells that are grown by molecular beam

  12. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

    SciTech Connect (OSTI)

    Ruterana, Pierre Wang, Yi Chen, Jun Chauvat, Marie-Pierre; El Kazzi, S.; Deplanque, L.; Wallart, X.

    2014-10-06

    A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.

  13. Ferromagnetic (Ga,Mn)As nanostructures for spintronic applications

    SciTech Connect (OSTI)

    Wosinski, Tadeusz; Andrearczyk, Tomasz; Figielski, Tadeusz; Makosa, Andrzej; Wrobel, Jerzy; Sadowski, Janusz

    2013-12-04

    Magneto-resistive, cross-like nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, a novel magneto-resistive memory effect, related to a rearrangement of magnetic domain walls in the central part of the device, has been demonstrated. It consists in that the zero-field resistance of a nanostripe depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.

  14. Effect of Spin-Crossover-Induced Pore Contraction on CO{sub 2}-Host Interactions in the Porous Coordination Polymers [Fe(pyrazine)M(CN){sub 4}] (M = Ni, Pt)

    SciTech Connect (OSTI)

    Culp, Jeffrey T.; Chen, De-Li; Liu, Jinchen; Chirdon, Danielle; Kauffman, Kristi; Goodman, Angela; Johnson, J. Karl

    2013-02-01

    Variable-temperature in situ ATR-FTIR spectra are presented for the porous spin-crossover compounds [Fe(pyrazine)- Ni(CN){sub 4}] and [Fe(pyrazine)Pt(CN){sub 4}] under CO{sub 2} pressures of up to 8 bar. Significant shifts in the ?{sub 3} and ?{sub 2} IR absorption bands of adsorbed CO{sub 2} are observed as the host materials undergo transition between low- and high-spin states. Computational models used to determine the packing arrangement of CO{sub 2} within the pore structures show a preferred orientation of one of the adsorbed CO{sub 2} molecules with close O=C=O···H contacts with the pyrazine pillar ligands. The interaction is a consequence of the commensurate distance of the inter-pyrazine separations and the length of the CO{sub 2} molecule, which allows the adsorbed CO{sub 2} to effectively bridge the pyrazine pillars in the structure. The models were used to assign the distinct shifts in the IR absorption bands of the adsorbed CO{sub 2} that arise from changes in the O=C=O···H contacts that strengthen and weaken in correlation with changes in the Fe–N bond lengths as the spin state of Fe changes. The results indicate that spin-crossover compounds can function as a unique type of flexible sorbent in which the pore contractions associated with spin transition can affect the strength of CO{sub 2}–host interactions.

  15. Temperature measurement of an atmospheric pressure arc discharge plasma jet using the diatomic CN (B {sup 2}{sigma}{sup +}-X {sup 2}{sigma}{sup +}, violet system) molecular spectra

    SciTech Connect (OSTI)

    Moon, Se Youn; Kim, D. B.; Gweon, B.; Choe, W.

    2009-03-01

    The CN (B {sup 2}{sigma}{sup +}-X {sup 2}{sigma}{sup +}) molecular emission spectrum is used to measure both the vibrational and rotational temperatures in atmospheric pressure arc jet discharges. The vibrational and rotational temperature effects on the synthetic diatomic molecular spectra were investigated from the (v{sup '},v{sup ''})=(0,0) band to the (5,5) band. The temperatures obtained from the synthetic spectra compared with the experimental result of a low-frequency arc discharge show a vibrational temperature of (4250-5010) K and a rotational temperature of (3760-3980) K for the input power in the range of (80-280) W. As the (0,0) band is isolated from other vibrational transition bands, determination of the rotational temperature is possible based only on the (0,0) band, which simplifies the temperature measurement. From the result, it was found that the CN molecular spectrum can be used as a thermometer for atmospheric pressure plasmas containing carbon and nitrogen.

  16. High-fluence Ga-implanted silicon—The effect of annealing and cover layers

    SciTech Connect (OSTI)

    Fiedler, J., E-mail: jan.fiedler@hzdr.de; Heera, V.; Hübner, R.; Voelskow, M.; Germer, S.; Schmidt, B.; Skorupa, W. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), D-01314 Dresden (Germany)

    2014-07-14

    The influence of SiO{sub 2} and SiN{sub x} cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750?°C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20?ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900?°C. However, in this case, Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiO{sub x} grown during annealing which only can be avoided by the usage of SiN{sub x} cover layers.

  17. Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

    SciTech Connect (OSTI)

    Sobolev, M. M.; Nevedomskii, V. N.; Zolotareva, R. V.; Vasil'ev, A. P.; Ustinov, V. M.

    2014-02-21

    Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.

  18. Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy

    SciTech Connect (OSTI)

    Liang, Y.; Kulik, J.; Eschrich, T.C.; Droopad, R.; Yu, Z.; Maniar, P. [Microelectronics and Physical Sciences Laboratory, Process and Materials Characterization Laboratory, and Microelectronics and Physical Sciences Laboratory, Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284 (United States)

    2004-08-16

    Hetero-epitaxy of single-crystal perovskite SrTiO{sub 3} on GaAs(001) was achieved using molecular beam epitaxy. The growth was accomplished by deposition of a submonolayer of titanium on GaAs(001), followed by the co-deposition of strontium and titanium initiated at a low-temperature, low-oxygen-pressure condition. X-ray photoelectron spectroscopy showed that the Ti prelayer reacted with As and formed TiAs-like species on the As terminated GaAs(001) surface. Reflection-high-energy-electron diffraction showed that SrTiO{sub 3} grew coherently on the GaAs(001) at early stage of growth. This coherent behavior began to degrade when SrTiO{sub 3} thickness exceeded 20 A ring . Cross-sectional transmission electron microscopy revealed an abrupt interface between SrTiO{sub 3} and GaAs and good crystallinity of the SrTiO{sub 3} film. An epitaxial relationship between SrTiO{sub 3} and GaAs was further confirmed by x-ray diffraction. The success of growth of SrTiO{sub 3} on GaAs paves the way for integration of various functional perovskite oxides with GaAs.

  19. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange

    E-Print Network [OSTI]

    Wang, Zhong L.

    of Technology, Atlanta, GA 30332-0245, USA b School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA Received 17 March 2002; accepted 16 April 2002 by D. Van Dyck Abstract P exchange; D. Stranski­Krastanov (S­K) growth Self-assemble by exploiting the Stranski­Krastanov (S

  20. High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

    E-Print Network [OSTI]

    High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

  1. Activation of small alkanes in Ga-exchanged zeolites: A quantum chemical study of ethane dehydrogenation

    SciTech Connect (OSTI)

    Frash, M.V.; Santen, R.A. van

    2000-03-23

    Quantum chemical calculations on the mechanism of ethane dehydrogenation catalyzed by Ga-exchanged zeolites have been undertaken. Two forms of gallium, adsorbed dihydride gallium ion GaH{sub 2}+Z{sup {minus}} and adsorbed gallyl ion [Ga=O]{sup +}Z{sup {minus}}, were considered. It was found that GaH{sub 2}{sup +}Z{sup {minus}} is the likely active catalyst. On the contrary, [Ga=O]{sup +}Z{sup {minus}} cannot be a working catalyst in nonoxidative conditions, because regeneration of this form is very difficult. Activation of ethane by GaH{sub 2}{sup +}Z{sup {minus}} occurs via an alkyl mechanism and the gallium atom acts as an acceptor of the ethyl group. The carbenium activation of ethane, with gallium abstracting a hydride ion, is much (ca. 51 kcal/mol) more difficult. The catalytic cycle for the alkyl activation consists of three elementary steps: (1) rupture of the ethane C-H bond; (2) formation of dihydrogen from the Bronsted proton and hydrogen bound to Ga; and (3) formation of ethene from the ethyl group bound to Ga. The best estimates (MP2/6--311++G(2df,p)//B3LYP/6--31G*) for the activation energies of these three steps are 36.9, ca. 0, and 57.9 kcal/mol, respectively.

  2. Short-time hydrothermal synthesis and delamination of ion exchangeable Mg/Ga layered double hydroxides

    SciTech Connect (OSTI)

    Unal, Ugur [Department of Nano Science and Technology, Faculty of Engineering, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555 (Japan)], E-mail: ugurunal@chem.kumamoto-u.ac.jp

    2007-09-15

    The hydrothermal synthesis of magnesium-gallium layered double hydroxides (Mg/Ga LDHs) was studied under static and agitated conditions. Not only well-crystallized and large-sized Mg/Ga LDHs having hexagonal morphology were obtained but also the reaction time was comparatively decreased from 24 to 2 h by means of agitation during hydrothermal synthesis. In static conditions, mainly GaOOH and magnesite phases were formed. The elemental analysis results show that the final Mg/Ga ratio is significantly different from the initial ratio. The reason was attributed to the difference in the hydrolytic behavior of Mg{sup 2+} and Ga{sup 3+}. Furthermore, the anion exchange studies with glycine, dodecyl sulfate, ferrocyanide and ferricyanide were performed to investigate the intercalation behavior of the anions into Mg/Ga LDHs. In addition, delamination of Mg/Ga LDHs was performed in formamide for the glycine exchanged forms. Large size of nanosheets thus obtained can be utilized in the fabrication of functional thin films. - Graphical abstract: Hydrothermal synthesis under agitation resulted in highly crystalline Mg/Ga LDHs slabs in a short time. The LDHs slabs were delaminated into two-dimensional nanosize sheets.

  3. Radiation studies for GaAs in the ATLAS Inner Detector

    E-Print Network [OSTI]

    M. Rogalla; Th. Eich; N. Evans; R. Geppert; R. Goeppert; R. Irsigler; J. Ludwig; K. Runge; Th. Schmid

    1997-01-22

    We estimate the hardness factors and the equivalent 1 MeV neutron fluences for hadrons fluences expected at the GaAs positions wheels in the ATLAS Inner Detector. On this basis the degradation of the GaAs particle detectors made from different substrates as a function of years LHC operation is predicted.

  4. In-situ surface composition measurements of CuGaSe{sub 2} thin films

    SciTech Connect (OSTI)

    Fons, P.; Yamada, A.; Niki, S.; Oyanagi, H.

    1998-12-31

    Two CuGaSe{sub 2} films were grown by molecular beam epitaxy onto GaAs (001) substrates with varying Cu/Ga flux ratios under Se overpressure conditions. Growth was interrupted at predetermined times and the surface composition was measured using Auger electron spectroscopy after which growth was continued. After growth, the film composition was analyzed using voltage dependent electron microprobe spectroscopy. Film structure and morphology were also analyzed using x-ray diffraction and atomic force microscopy. The film with a Cu/Ga ratio larger than unity showed evidence of surface segregation of a second Cu-rich phase with a Cu/Se composition ratio slightly greater than unity. A second CuGaSe{sub 2} film with a Cu/Ga ratio of less than unity showed no change in surface composition with time and was also consistent with bulk composition measurements. Diffraction measurements indicated a high concentration of twins as well as the presence of domains with mixed c and a axes in the Ga-rich film. The Cu-rich films by contrast were single domain and had a narrower mosaics. High sensitivity scans along the [001] reciprocal axis did not exhibit any new peaks not attributable to either the substrate or the CuGaSe{sub 2} thin film.

  5. Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier

    E-Print Network [OSTI]

    Gilchrist, James F.

    Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum DOI: 10.1109/JPHOT.2013.2255028 1943-0655/$31.00 Ó2013 IEEE #12;Efficiency-Droop Suppression by Using with the consideration of carrier transport effect for efficiency droop suppression. The lattice-matched Al

  6. Adhesion energy in nanogap InP/InGaAs microcantilevers Jan D. Makowski,a

    E-Print Network [OSTI]

    Talghader, Joseph J.

    Adhesion energy in nanogap InP/InGaAs microcantilevers Jan D. Makowski,a Anand S. Gawarikar 2006 The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 125 nm and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72

  7. A GA-based Approach for Scheduling Decomposable Data Grid Applications

    E-Print Network [OSTI]

    Weissman, Jon

    A GA-based Approach for Scheduling Decomposable Data Grid Applications Seonho Kim and Jon B data onto communication and computation resources. The proposed GA-based scheduler takes advantage, Data Grid, Job Scheduling, Genetic Algorithm, Parallel Processing Relevant technical areas: Network-Based

  8. Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

    SciTech Connect (OSTI)

    ERTEN ESER

    2012-01-22

    The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

  9. Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure

    SciTech Connect (OSTI)

    Dixit, V. K.; Kumar, Shailendra; Singh, S. D.; Khamari, S. K.; Kumar, R.; Tiwari, Pragya; Sharma, T. K.; Oak, S. M. [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Phase, D. M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452001 (India)

    2014-03-03

    Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7?±?0.1?eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.

  10. Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates

    SciTech Connect (OSTI)

    Mauk, M.G.; Feyock, B.W.; Hall, R.B.; Cavanaugh, K.D.; Cotter, J.E.

    1997-12-31

    The authors assess the potential of a low-cost, large-area Silicon-Film{trademark} sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-Film is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge{sub 1{minus}x}Si{sub x} buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects.

  11. MOCVD growth of GaAs solar cells on silicon substrates

    SciTech Connect (OSTI)

    Vernon, S.M.; Haven, V.E.; Geoffroy, L.M.; Sanfacon, M.M.; Mastrovito, A.L. )

    1992-12-01

    This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

  12. Doping of GaN{sub 1-x}As{sub x} with high As content

    SciTech Connect (OSTI)

    Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

    2011-09-22

    Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

  13. Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.; Itoh, Y.

    1989-07-15

    This paper describes some recent developments in GaAs thin-film solar cells fabricated on Si substrates by metalorganic chemical vapor deposition and numerically analyzes them.GaAs solar cells with efficiency of more than 18% are successfully fabricated on Si substrates by reducing the dislocation density. Photovoltaic properties of GaAs/Si cells are analyzed by considering the effect of nonuniform dislocation distribution on recombination properties of GaAs thin films on Si substrates. Numerical analysis shows that the effect of majority-carrier trapping must be considered. High efficiency GaAs solar cells with total-area efficiency of over 20% on Si substrates can be realized if dislocation density can be reduced to less than 5/times/10/sup 5/ cm/sup /minus/2/.

  14. Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature

    SciTech Connect (OSTI)

    Shah, S.; Ghosh, K.; Jejurikar, S.; Mishra, A.; Chakrabarti, S.

    2013-08-01

    Graphical abstract: - Highlights: • Investigation of ground state energy in single and multi-layered InAs/GaAs QD. • Strain reducing layer (InGaAs) prevents the formation of non-radiative. • Strain reducing layer (InGaAs) is responsible for high activation energy. • Significant deviation from the Varshni model, E(T) = E ? ?T{sup 2}/T + ?. - Abstract: Vertically coupled, multilayered InAs/GaAs quantum dots (QDs) covered with thin InGaAs strain-reducing layers (SRLs) are in demand for various technological applications. We investigated low temperature photoluminescence of single and multilayered structures in which the SRL thickness was varied. The SRL layer was responsible for high activation energies. Deviation of experimental data from the Varshni (1967) model, E(T) = E ? ? T{sup 2}/T + ?, suggests that the InAs-layered QDs have properties different from those in bulk material. Anomalous ground-state peak linewidths (FWHM), especially for annealed multilayer structures, were observed. A ground-state peak blue-shift with a broadened linewidth was also observed. Loss of intensity was detected in samples annealed at 800 °C. Presence of SRLs prevents formation of non-radiative centers under high temperature annealing. The results indicate the potential importance of such structures in optoelectronic applications.

  15. Scanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga0.47As(0 0 1)

    E-Print Network [OSTI]

    Kummel, Andrew C.

    trap density [3]. Fermi level pinning can be caused by strong perturbations to the electronic structure with the electronic structure of Ga2O on In0.53Ga0.47As(0 0 1) were explored. Scanning tunneling microscopy (STMScanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga

  16. Chemical surface inhomogeneities in late B-type stars with Hg and Mn peculiarity I Spot evolution in HD 11753 on short and long time scales

    E-Print Network [OSTI]

    Korhonen, H; Briquet, M; Soriano, M Flores; Hubrig, S; Savanov, I; Hackman, T; Ilyin, I V; Eulaers, E; Pessemier, W

    2013-01-01

    Aims: Time series of high-resolution spectra of the late B-type star HD 11753 exhibiting HgMn chemical peculiarity are used to study the surface distribution of different chemical elements and their temporal evolution. Methods: High-resolution and high signal-to-noise ratio spectra were obtained using the CORALIE spectrograph at La Silla in 2000, 2009, and 2010. Surface maps of YII, SrII, TiII, and CrII were calculated using the Doppler imaging technique. The results were also compared to equivalent width measurements. The evolution of chemical spots both on short and long time scales were investigated. Results: We determine the binary orbit of HD 11753 and fine-tune the rotation period of the primary. The earlier discovered fast evolution of the chemical spots is confirmed by an analysis using both the chemical spot maps and equivalent width measurements. In addition, a long-term decrease in the overall YII and SrII abundances is discovered. A detailed analysis of the chemical spot configurations reveals som...

  17. Electrical and optical properties of Mn-doped Hg{sub 3}In{sub 2}Te{sub 6} crystals

    SciTech Connect (OSTI)

    Grushka, O. G. Chupyra, S. M.; Mysliuk, O. M.; Bilichuk, S. V.; Koziarskyi, D. P.

    2013-09-15

    The effect of Mn impurities on the properties of Hg{sub 3}In{sub 2}Te{sub 6} crystals is studied by electrical and optical measurements. It is shown that, despite the high dopant concentration (1 Multiplication-Sign 10{sup 19} cm{sup -3}), the electron concentration remains the same as that in an undoped crystal ({approx}10{sup 13} cm{sup -3} at 300 K). At the same time, narrowing of the band gap from 0.74 to 0.7 eV is observed. From an analysis of the absorption spectra, it is found that the absorption edge is formed by optical transitions involving density-of-states (DoS) tails and that two acceptor- and donor-type impurity bands are formed in the band gap. The two bands are described by a Gaussian distribution of the DoS, with an energy gap between the peaks of E{sub 0} = E{sub d}{sup 0} - E{sub a}{sup 0} = 0.4 eV. The total donor and acceptor concentration N{sub d} + N{sub a} and the degree of compensation K = N{sub a}/N{sub d} {yields} 1 are determined. Such compensation is responsible for pinning of the Fermi level near the middle of the band gap and for quasi-intrinsic conductivity at temperatures T {>=} 300 K.

  18. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 2) semipolar versus (0001) polar

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Articles you may be interested in Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam light-emitting diodes prepared on ( 11 2 ¯ 2 ) -plane GaN J. Appl. Phys. 100, 113109 (2006); 10.1063/1.2382667 Demonstration of a semipolar ( 10 1 ¯ 3 ¯ ) In Ga N Ga N green light emitting diode Appl. Phys. Lett. 87, 231110

  19. Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Timmons, M.L.; Sharps, P.R.; Colpitts, T.S.; Hills, J.S.; Hancock, J.; Hutchby, J.A. )

    1992-12-01

    Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, thin-film, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiencies of 19.9% and 21% at 1-sun and 7-suns, respectively, has been obtained.

  20. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-05-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  1. Intersubband transitions in In{sub x}Ga{sub 1?x}N/In{sub y}Ga{sub 1?y}N/GaN staggered quantum wells

    SciTech Connect (OSTI)

    Y?ld?r?m, Hasan; Aslan, Bulent

    2014-04-28

    Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrödinger and Poisson equations are solved self-consistently by taking the free and bound surface charge concentrations into account. Many-body effects, namely, depolarization and excitonic shifts are also included in the calculations. Results for transition energies, oscillator strength, and the absorption lineshape up to nonlinear regime are represented as functions of the parameters mentioned. The well width (total and constituent layers separately) and In concentration dependence of the built-in electric field are exploited to tune the intersubband transition energies.

  2. Effect of Ga content on defect states in CuIn1xGaxSe2 photovoltaic devices

    E-Print Network [OSTI]

    Rockett, Angus

    gaps for single junction solar cells expected to be around 1.4 eV.2 This corresponds to a Ga fraction x 0.6, with x Ga/(In Ga). Higher Ga material would also be useful as a component of multi-junction or graded band gap cells. However, the best devices to date contain material with x 0.2, and it is difficult

  3. High efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler

    E-Print Network [OSTI]

    Atwater, Harry

    illumination was achieved using an InGaP/GaAs/InGaAs triple-junction cell design with an In- GaAs bottom cell.1 benefit from such an InP/Si substrate.2 Additionally, a proposed four-junction solar cell, fabri- cated for bulk InP in the fabrication of such a four-junction solar cell could significantly reduce the substrate

  4. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

  5. Cr-Ga-N materials for negative electrodes in Li rechargeable batteries : structure, synthesis and electrochemical performance

    E-Print Network [OSTI]

    Kim, Miso

    2007-01-01

    Electrochemical performances of two ternary compounds (Cr2GaN and Cr3GaN) in the Cr-Ga-N system as possible future anode materials for lithium rechargeable batteries were studied. Motivation for this study was dealt in ...

  6. High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current

    E-Print Network [OSTI]

    High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current T. Tut a , N.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process

  7. Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

    SciTech Connect (OSTI)

    Kim, Jaehwan; Min, Daehong; Jang, Jongjin; Lee, Kyuseung; Chae, Sooryong; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Advanced Photonics Research Center/LED Technology Center, Department of Nano-Optical Engineering, Korea Polytechnic University, 237, Sangidaehak-ro, Siheung-si, Gyeonggi-do 429-793 (Korea, Republic of)

    2014-10-28

    In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

  8. Experimental and theoretical studies of band gap alignment in GaAs{sub 1?x}Bi{sub x}/GaAs quantum wells

    SciTech Connect (OSTI)

    Kudrawiec, R. Kopaczek, J.; Polak, M. P.; Scharoch, P.; Gladysiewicz, M.; Misiewicz, J.; Richards, R. D.; Bastiman, F.; David, J. P. R.

    2014-12-21

    Band gap alignment in GaAs{sub 1?x}Bi{sub x}/GaAs quantum wells (QWs) was studied experimentally by photoreflectance (PR) and theoretically, ab initio, within the density functional theory in which the supercell based calculations are combined with the alchemical mixing approximation applied to a single atom in a supercell. In PR spectra, the optical transitions related to the excited states in the QW (i.e., the transition between the second heavy-hole and the second electron subband) were clearly observed in addition to the ground state QW transition and the GaAs barrier transition. This observation is clear experimental evidence that this is a type I QW with a deep quantum confinement in the conduction and valence bands. From the comparison of PR data with calculations of optical transitions in GaAs{sub 1?x}Bi{sub x}/GaAs QW performed for various band gap alignments, the best agreement between experimental data and theoretical calculations has been found for the valence band offset of 52?±?5%. A very similar valence band offset was obtained from ab initio calculations. These calculations show that the incorporation of Bi atoms into GaAs host modifies both the conduction and the valence band. For GaAs{sub 1?x}Bi{sub x} with 0?GaAs{sub 1?x}Bi{sub x} and GaAs in the range of ?60%–40% (?40%–60%), which is in good agreement with our conclusion derived from PR measurements.

  9. Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector

    SciTech Connect (OSTI)

    Yamashita, Masatsugu, E-mail: m-yama@riken.jp; Takahashi, Hideki; Otani, Chiko [RIKEN Center for Advanced Photonics, 519-1399 Aobaaramaki, Aoba-ku, Sendai 980-0845 (Japan); Ouchi, Toshihiko [Corporate R and D Headquarters, Canon Inc., 30-2 Shimomaruko 3-Chome, Ohta-ku, Tokyo 145-8501 (Japan)

    2014-02-03

    We present a reflection-type ultra-broadband terahertz (THz) time-domain spectroscopic ellipsometry system covering the frequency range of 0.5–30 THz. GaP (110) and z-cut GaSe crystals are used as emitters to generate the THz and mid-infrared pulses, respectively, and a photoconductive antenna switch using a low-temperature grown GaAs epitaxial layer transferred on Si substrate was used as a detector. By changing the emitter between the GaP and GaSe crystals, the measurable frequency range can be easily switched from the 0.5–7.8 THz range to the 7.8–30 THz range without additional optical alignment. We demonstrated the measurement of the dielectric function in a p-type InAs wafer and the optical conductivity of an indium tin oxide (ITO) thin film. The obtained carrier density and the mobility of the ITO thin film show good agreement with that obtained by the Hall measurement.

  10. Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

    SciTech Connect (OSTI)

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2012-07-23

    AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using capacitance-frequency-temperature (C-f-T) mapping. Applying sputtering-deposited AlN, we attained AlN/AlGaN/GaN MIS heterostructure field-effect transistors with much suppressed gate leakage currents, but exhibiting frequency dispersion in C-V characteristics owing to high-density AlN/AlGaN interface states. In order to investigate the interface states deteriorating the device performance, we measured temperature-dependent frequency dispersion in the C-V characteristics. As a result, we obtained C-f-T mapping, whose analysis gives the activation energies of electron trapping, namely the interface state energy levels, for a wide range of the gate biases. This analysis method is auxiliary to the conventional conductance method, serving as a valuable tool for characterization of wide-bandgap devices with deep interface states. From the analysis, we can directly evaluate the gate-control efficiency of the devices.

  11. Sulfur-mediated palladium catalyst immobilized on a GaAs surface

    SciTech Connect (OSTI)

    Shimoda, M. [Surface Physics and Structure Unit, Surface Physics Group, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Konishi, T. [Anan National College of Technology, 265 Aoki, Minobayashi-cho, Anan, Tokushima 774-0017 (Japan); Nishiwaki, N. [School of Environmental and Engineering, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502 (Japan); Yamashita, Y.; Yoshikawa, H. [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2012-06-15

    We present a hard x-ray photoelectron spectroscopy study on the preparation process of palladium catalyst immobilized on an S-terminated GaAs(100) surface. It is revealed that Pd(II) species are reduced on the GaAs surface and yield Pd nanoparticles during the process of Pd immobilization and the subsequent heat treatment. A comparison with the results on GaAs without S-termination suggests that the reduction of Pd is promoted by hydroxy groups during the Pd immobilization and by S during the heat treatment.

  12. p-type GaN grown by phase shift epitaxy

    SciTech Connect (OSTI)

    Zhong, M.; Steckl, A. J., E-mail: a.steckl@uc.edu [Department of Electrical Engineering and Computing Systems, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Roberts, J. [Nitronex Corporation, Raleigh, North Carolina 27606 (United States)] [Nitronex Corporation, Raleigh, North Carolina 27606 (United States); Kong, W.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)] [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)

    2014-01-06

    Phase shift epitaxy (PSE) is a periodic growth scheme, which desynchronizes host material growth process from dopant incorporation, allowing independent optimization. p-type doping of GaN with Mg by PSE is accomplished with molecular beam epitaxy by periodic shutter action (in order to iterate between Ga- and N-rich surface conditions) and by adjusting time delays between dopant and Ga shutters. Optimum PSE growth was obtained by turning on the Mg flux in the N-rich condition. This suppresses Mg self-compensation at high Mg concentration and produces fairly high hole concentrations (2.4?×?10{sup 18}?cm{sup ?3})

  13. Low Cost Production of InGaN for Next-Generation Photovoltaic Devices

    SciTech Connect (OSTI)

    Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa,

    2012-07-09

    The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.

  14. Coherent acoustic phonon generation in GaAs{sub 1?x}Bi{sub x}

    SciTech Connect (OSTI)

    Joshya, R. S.; Kini, R. N., E-mail: rajeevkini@iisertvm.ac.in [Indian Institute of Science Education and Research Thiruvananthapuram (IISER-TVM), CET Campus, Thiruvananthapuram, Kerala 695016 (India); Ptak, A. J.; France, R.; Mascarenhas, A. [National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401 (United States)

    2014-03-03

    We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs{sub 1?x}Bi{sub x}. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs{sub 1?x}Bi{sub x} layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities.

  15. Towards Fully Integrated High Temperature Wireless Sensors Using GaN-based HEMT Devices

    SciTech Connect (OSTI)

    Kuruganti, Phani Teja [ORNL; Islam, Syed K [ORNL; Huque, Mohammad A [ORNL

    2008-01-01

    Wireless sensors which are capable of working at extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better control systems. GaN, a widely researched wide bandgap material, has the potential to be used both as a sensing material and to fabricate control electronics, making it a prime candidate for high temperature integrated wireless sensor fabrication. In this paper we are presenting an experimental study on AlGaN/GaN HEMT's performance at higher temperature (up to 300 C). From test results, DC and microwave parameters at different temperatures were extracted.

  16. Temperature dependence of non-radiative energy transfer in hybrid structures of InGaN/GaN nanorods and F8BT films

    SciTech Connect (OSTI)

    Smith, R. M.; Liu, B.; Bai, J.; Wang, T., E-mail: t.wang@sheffield.ac.uk [Department of Electrical and Electronic Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2014-10-27

    Hybrid organic/inorganic white light emitting structures have been fabricated based on a combination of high efficiency InGaN/GaN multiple quantum well (MQW) nanorod arrays and a yellow emitting co-polymer F8BT, leading to a minimised separation between them in order to achieve high efficiency non-radiative energy transfer (NRET). The NRET efficiency has been found 6.7 times higher at room temperature than at 7?K. This is attributed to the existence of strong exciton localization the InGaN MQWs, which can undergo thermally activated delocalization at high temperatures. The enhanced NRET efficiency is not only due to the delocalized MQW excitons, but also enhanced by the increased exciton diffusion at higher temperatures. This behaviour highlights the potential for high efficiency NRET in down-conversion hybrid white light emitting diodes operating at room temperature.

  17. Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tiam Tan, Swee; Ji, Yun; Zhang, Xueliang; Wang, Liancheng; Kyaw, Zabu; Wei Sun, Xiao, E-mail: exwsun@ntu.edu.sg, E-mail: volkan@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Volkan Demir, Hilmi, E-mail: exwsun@ntu.edu.sg, E-mail: volkan@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-06-23

    InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly.

  18. Highly tunable quantum Hall far-infrared photodetector by use of GaAs/Al{sub x}Ga{sub 1?x}As-graphene composite material

    SciTech Connect (OSTI)

    Tang, Chiu-Chun [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ling, D. C. [Department of Physics, Tamkang University, Tamsui Dist., New Taipei City 25137, Taiwan (China); Chi, C. C.; Chen, Jeng-Chung [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2014-11-03

    We have developed a highly tunable, narrow band far-infrared (FIR) photodetector which utilizes the characteristic merits of graphene and two-dimensional electron gas (2DEG) in GaAs/Al{sub x}Ga{sub 1?x}As heterostructure in the Quantum Hall states (QHS). The heterostructure surface is covered with chemical vapor-deposited graphene, which functions as a transparent top-gate to vary the electron density of the 2DEG. FIR response observed in the vicinity of integer QH regime can be effectively tuned in a wide range of 27–102?cm{sup ?1} with a bias voltage less than ?1?V. In addition, we have found that the presence of graphene can genuinely modulate the photoresponse. Our results demonstrate a promising direction for realizing a tunable long-wavelength FIR detector using QHS in GaAs 2DEG/ graphene composite material.

  19. Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

    SciTech Connect (OSTI)

    Wallace, M. J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Kappers, M. J.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Hopkins, M. A.; Sivaraya, S.; Allsopp, D. W. E. [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom)

    2014-07-21

    Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2–10??m in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30–40?meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (?100??m) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN.

  20. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

    SciTech Connect (OSTI)

    Andreev, V. M.; Evstropov, V. V.; Kalinovsky, V. S. Lantratov, V. M.; Khvostikov, V. P.

    2009-05-15

    Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V{sub j} characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V{sub j} characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V{sub OC}, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V{sub j} characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation.

  1. Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 4 vs Ga/In-rich InGaAs(001) 4 2

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich In atomic layer deposition Appl. Phys. Lett. 104, 042904 (2014); 10.1063/1.4863440 Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition Appl. Phys. Lett. 101

  2. How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties

    SciTech Connect (OSTI)

    Zhang, Lei; Hill, Tyler A.; Deng, Hui E-mail: peicheng@umich.edu; Lee, Leung-Kway; Teng, Chu-Hsiang; Ku, Pei-Cheng E-mail: peicheng@umich.edu

    2014-02-03

    We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40?nm, corresponding to the quantum dot limit. The enhancement results from significant strain relaxation in nanodisks less than 100?nm in diameter. Meanwhile, the radiative decay rate is only improved by 10 folds due to strong reduction of the local density of photon states in small nanodisks. Further increase in the radiative decay rate can be achieved by engineering the local density of photon states, such as adding a dielectric coating.

  3. MERIT Hg System Fabrication Status

    E-Print Network [OSTI]

    McDonald, Kirk

    LABORATORY U. S. DEPARTMENT OF ENERGY MC Friday Meeting 13 Jan 2006 Syringe Pump · Consists of 3 hydraulic Friday Meeting January 13, 2006 #12;2 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY MC Friday cylinders, hydraulic pump, and manual controls · Awarded to Airline Hydraulics Corporation (AHC

  4. Microsoft Word - Hg.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OF PAGESpersonal CERTIFIED MAIL43 PART III:Figure 1. Dr.

  5. Terahertz waveguide spectroscopy of two-dimensional plasmons in GaAs

    E-Print Network [OSTI]

    Harris, C. Thomas (Charles Thomas)

    2010-01-01

    The electrical characteristics of high-mobility, two-dimensional electron gas (2DEG) systems, such as GaAs quantum wells, have been well-studied at low frequencies and in extreme conditions of high magnetic fields and ...

  6. Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Wang, KY; Masek, J.; Edmonds, KW; Konig, J.; Sinova, Jairo; Polini, M.; Goncharuk, NA; MacDonald, AH; Sawicki, M.; Rushforth, AW; Campion, RP; Zhao, LX; Foxon, CT; Gallagher, BL.

    2005-01-01

    We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T-c in high...

  7. Precision of a Low-Cost InGaAs Detector for Near Infrared Photometry

    E-Print Network [OSTI]

    Simcoe, Robert A.

    We have designed, constructed, and tested an InGaAs near-infrared camera to explore whether low-cost detectors can make small (?1 m) telescopes capable of precise (photometry of relatively bright targets. ...

  8. Near-infrared InGaAs detectors for background-limited imaging and photometry

    E-Print Network [OSTI]

    Sullivan, Peter W.

    Originally designed for night-vision equipment, InGaAs detectors are beginning to achieve background-limited performance in broadband imaging from the ground. The lower cost of these detectors can enable multi-band ...

  9. GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications

    E-Print Network [OSTI]

    Hering, K.P.

    Several growth methods were employed to investigate the photovoltaic behavior of GaN/Cu[subscript 2]O heterojunctions by depositing cuprous oxide thin films on top of gallium nitride templates. The templates consist of a ...

  10. Sandia Energy - Optical performance of top-down fabricated InGaN...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    performance of top-down fabricated InGaNGaN nanorod light emitting diode arrays" in Optics Express. This paper details the development of a two-step top-down process for...

  11. Understanding and development of combined acoustic and magnetic actuation of Ni?MnGa single crystals

    E-Print Network [OSTI]

    Techapiesancharoenkij, Ratchatee, 1979-

    2007-01-01

    Ni-Mn-Ga based ferromagnetic shape memory alloys (FSMAs) have emerged as a promising new class of active materials capable of producing a large (several %) magnetic-field-induced strain (MFIS). FSMAs still have several ...

  12. MULTIPLE-WINDOW SPECTROMETRY FOR $sup 67$Ga. Ross, D A; McClain...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    FOR sup 67Ga. Ross, D A; McClain, W J; East, J K; Bell, P R N26110* --Instrumentation--Radiation Detection Instruments-- General Detectors & Monitors; N28530 --Life...

  13. High-efficiency GaAs/Ge monolithic tandem solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.; Vernon, S.M.; Bajgar, C.; Haven, V.E.; Geoffroy, L.M.; Lillington, D.R.

    1988-05-01

    High photovoltaic efficiency and light weight are important criteria for spacecraft power applications. Present GaAs cells are approaching their efficiency limits, but are not efficient or light enough for future needs. The authors have investigated tandem cells of GaAs grown by MOCVD on thin Ge to address both higher efficiency and reduced weight. GaAs/Ge monolithic tandem cells of 4-cm/sup 2/ area have been produced with independently verified efficiencies up to 21.7 percent (AMO, one sun, 25/sup 0/C, total area). Under AM1.5 Global conditions, efficiencies are up to 24.3 percent. These are the highest one-sun efficiencies reported for GaAs/Ge cells, and the highest efficiency for a two-terminal monolithic tandem cell.

  14. High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications

    E-Print Network [OSTI]

    Chen, Xu

    2015-01-01

    efficient GaN HEMT boost converter with 300-W output power29 Figure 3.13. Half-bridge boost converterin a half-bridge boost converter circuit shown in figure

  15. Deeply-scaled GaN high electron mobility transistors for RF applications

    E-Print Network [OSTI]

    Lee, Dong Seup

    2014-01-01

    Due to the unique combination of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The ...

  16. Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2011-01-01

    In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

  17. Demonstration of forward inter-band tunneling in GaN by polarization engineering

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

    2011-12-05

    We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm{sup 2} at 10 mV, and 17.7 A/cm{sup 2} peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

  18. Probing the structure of the N=Z=31 nucleus {sub 31}{sup 62}Ga

    SciTech Connect (OSTI)

    Vincent, S. M.; Regan, P. H.; Gelletly, W.; Pearson, C. J. [Department of Physics, University of Surrey, Guildford GU2 5XH (United Kingdom); Warner, D. D.; Simpson, J. [CCLRC Daresbury Laboratory, Warrington, WA4 4AD (United Kingdom); Bark, R.; Saitoh, T. [Niels Bohr Institute Tandem Accelerator Laboratory, Risoe, DK-4000, Roskilde (Denmark); Blumenthal, D.; Carpenter, M. P.; Davids, C. N.; Henderson, D. J.; Janssens, R. V. F.; Lister, C. J.; Nisius, D.; Seweryniak, D. [Argonne National Laboratory, 9700 South Cass Ave, Illinois 60439 (United States); O'Leary, C. D. [School of Sciences, Staffordshire University, Stoke-on-Trent, ST4 2DE (United Kingdom); Schwartz, J. [Argonne National Laboratory, 9700 South Cass Ave, Illinois 60439 (United States); A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06511 (United States); Toermaenen, S. [Niels Bohr Institute Tandem Accelerator Laboratory, Risoe, DK-4000, Roskilde (Denmark); Department of Physics, University of Jyvaekylae, Jyvaekylae (Finland)

    1998-12-21

    The decay scheme of the N=Z odd-odd nucleus, {sup 62}Ga has been deduced for the first time using the reactions {sup 40}Ca({sup 24}Mg,pn){sup 62}Ga and {sup 40}Ca({sup 28}Si,{alpha}pn){sup 62}Ga at beam energies of 65 MeV and 88 MeV respectively. Transitions from excited states in {sup 62}Ga were identified using the PEX apparatus at the Niels Bohr Institute Tandem Accelerator Laboratory. Gamma ray angular correlation data collected using the AYEBALL array at the Argonne National Laboratory are consistent with a cascade of stretched E2 transitions which decay from a spin 1{sup +} bandhead via a pure magnetic dipole decay, directly linking a proposed T=0 structure with the T=1, J{sup {pi}}=0{sup +} ground state.

  19. Stimulated emission in GaN-based laser diodes far below the threshold region

    E-Print Network [OSTI]

    2014-01-01

    forward current of light-emitting diodes,” J. Appl. Phys.superluminescent light-emitting diodes based on GaN,” Appl.superluminescent light emitting diode structures,” J. Appl.

  20. Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

    E-Print Network [OSTI]

    Robinson, SJ

    2008-01-01

    3 ) through an 11-nm oxide layer. 10 The beam density duringemission images of the oxide layers, and they are typicallyJVD) 23 over the 11-nm oxide layer of the Ga-implanted