National Library of Energy BETA

Sample records for hafnium carbide four-foot

  1. Silver-hafnium braze alloy

    DOE Patents [OSTI]

    Stephens, Jr., John J.; Hosking, F. Michael; Yost, Frederick G.

    2003-12-16

    A binary allow braze composition has been prepared and used in a bonded article of ceramic-ceramic and ceramic-metal materials. The braze composition comprises greater than approximately 95 wt % silver, greater than approximately 2 wt % hafnium and less than approximately 4.1 wt % hafnium, and less than approximately 0.2 wt % trace elements. The binary braze alloy is used to join a ceramic material to another ceramic material or a ceramic material, such as alumina, quartz, aluminum nitride, silicon nitride, silicon carbide, and mullite, to a metal material, such as iron-based metals, cobalt-based metals, nickel-based metals, molybdenum-based metals, tungsten-based metals, niobium-based metals, and tantalum-based metals. A hermetic bonded article is obtained with a strength greater than 10,000 psi.

  2. Hafnium radioisotope recovery from irradiated tantalum

    DOE Patents [OSTI]

    Taylor, Wayne A. (Los Alamos, NM); Jamriska, David J. (Los Alamos, NM)

    2001-01-01

    Hafnium is recovered from irradiated tantalum by: (a) contacting the irradiated tantalum with at least one acid to obtain a solution of dissolved tantalum; (b) combining an aqueous solution of a calcium compound with the solution of dissolved tantalum to obtain a third combined solution; (c) precipitating hafnium, lanthanide, and insoluble calcium complexes from the third combined solution to obtain a first precipitate; (d) contacting the first precipitate of hafnium, lanthanide and calcium complexes with at least one fluoride ion complexing agent to form a fourth solution; (e) selectively adsorbing lanthanides and calcium from the fourth solution by cationic exchange; (f) separating fluoride ion complexing agent product from hafnium in the fourth solution by adding an aqueous solution of ferric chloride to obtain a second precipitate containing the hafnium and iron; (g) dissolving the second precipitate containing the hafnium and iron in acid to obtain an acid solution of hafnium and iron; (h) selectively adsorbing the iron from the acid solution of hafnium and iron by anionic exchange; (i) drying the ion exchanged hafnium solution to obtain hafnium isotopes. Additionally, if needed to remove residue remaining after the product is dried, dissolution in acid followed by cation exchange, then anion exchange, is performed.

  3. Ferroelectricity in undoped hafnium oxide

    SciTech Connect (OSTI)

    Polakowski, Patrick; Mller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 420?nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10??C?cm{sup ?2} as well as a read/write endurance of 1.6??10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  4. Formulation and method for preparing gels comprising hydrous hafnium oxide

    DOE Patents [OSTI]

    Collins, Jack L; Hunt, Rodney D; Montgomery, Frederick C

    2013-08-06

    Formulations useful for preparing hydrous hafnium oxide gels contain a metal salt including hafnium, an acid, an organic base, and a complexing agent. Methods for preparing gels containing hydrous hafnium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including hafnium, an acid, an organic base, and a complexing agent.

  5. Carbide and carbonitride surface treatment method for refractory metals

    DOE Patents [OSTI]

    Meyer, G.A.; Schildbach, M.A.

    1996-12-03

    A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system including a reaction chamber, a source of elemental carbon, a heating subassembly and a source of reaction gases. Alternative methods of providing the elemental carbon and the reaction gases are provided, as well as methods of supporting the metal part, evacuating the chamber with a vacuum subassembly and heating all of the components to the desired temperature. 5 figs.

  6. Microwave sintering of boron carbide

    DOE Patents [OSTI]

    Blake, R.D.; Katz, J.D.; Petrovic, J.J.; Sheinberg, H.

    1988-06-10

    A method for forming boron carbide into a particular shape and densifying the green boron carbide shape. Boron carbide in powder form is pressed into a green shape and then sintered, using a microwave oven, to obtain a dense boron carbide body. Densities of greater than 95% of theoretical density have been obtained. 1 tab.

  7. Electron-beam-evaporated thin films of hafnium dioxide for fabricating

    Office of Scientific and Technical Information (OSTI)

    electronic devices (Journal Article) | SciTech Connect Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices Citation Details In-Document Search This content will become publicly available on June 17, 2016 Title: Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this

  8. Carbide and carbonitride surface treatment method for refractory metals

    DOE Patents [OSTI]

    Meyer, Glenn A. (Danville, CA); Schildbach, Marcus A. (Livermore, CA)

    1996-01-01

    A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system (10) including a reaction chamber (14), a source of elemental carbon (17), a heating subassembly (20) and a source of reaction gases (23). Alternative methods of providing the elemental carbon (17) and the reaction gases (23) are provided, as well as methods of supporting the metal part (12), evacuating the chamber (14) with a vacuum subassembly (18) and heating all of the components to the desired temperature.

  9. Synthesis and Characterization of a Hafnium Derivative of the MOF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    UiO-66-NH2 and its use in Biomass Related Catalysis | The Ames Laboratory Synthesis and Characterization of a Hafnium Derivative of the MOF UiO-66-NH2 and its use in Biomass Related Catalysis Catalysis plays an important role in the synthesis of chemicals. One such process in which they are indispensable is in the conversion of biomass into fuel and commodity products. This area of research is an active research area due to the finite fossil fuel reserves. Development of catalysts that are

  10. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  11. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  12. PROCESS OF RECOVERING ZIRCONIUM VALUES FROM HAFNIUM VALUES BY SOLVENT EXTRACTION WITH AN ALKYL PHOSPHATE

    DOE Patents [OSTI]

    Peppard, D.F.

    1960-02-01

    A process of separating hafnium nitrate from zirconium nitrate contained in a nitric acid solution by selectively. extracting the zirconium nitrate with a water-immiscible alkyl phosphate is reported.

  13. Process for microwave sintering boron carbide

    DOE Patents [OSTI]

    Holcombe, Cressie E. (440 Sugarwood Dr., Knoxville, TN 37922); Morrow, Marvin S. (Rte. #3, Box 113, Kingston, TN 37763)

    1993-01-01

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  14. Process for microwave sintering boron carbide

    DOE Patents [OSTI]

    Holcombe, C.E.; Morrow, M.S.

    1993-10-12

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  15. Steelmaking with iron carbide

    SciTech Connect (OSTI)

    Geiger, G.H.; Stephens, F.A. )

    1993-01-01

    The concept of using iron carbide in steelmaking is not new. Tests were run several decades ago, using carbide made from ore, in steelmaking furnaces. The problem was that at that time, the need for the product was not clear and the economics of production were not favorable. In the early 1970's Frank M. Stephens, Jr., conceived the basis for the present process, and considerable development work has been done during the past decade to bring the carbide production process to its present state, with the first commercial unit now under construction. The process utilizes the following overall reaction to produce Fe[sub 3]C from ore: 3Fe[sub 2]O[sub 3] + 5H[sub 2] + 2 CH[sub 4][equals]2 Fe[sub 3]C + 9 H[sub 2]O. Hydrogen gas from a natural gas reformer is blended with natural gas to form the process gas that is recirculated through the fluid bed reactor, the cooling tower, to remove reaction product water, and back through the reactor again, after reheating. The closed loop nature of the process means that virtually 100% of the process reagents are utilized by the process. The only exception is that a small stream of the process gas is burned as fuel in the reheating step, in order to maintain the level of inerts in the process gas at an acceptable level. The quantity of the bleed stream is entirely dependent on the concentration of inert gases in the fuel supply.

  16. Methods of producing continuous boron carbide fibers

    DOE Patents [OSTI]

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  17. A look back at Union Carbides [first] 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    first 20 Years in Nuclear Energy The Gaseous Diffusion Plants Note: Union Carbide Nuclear Division, which started out as Carbide and Carbon Chemicals Company, operated the...

  18. Reinvestigation of high pressure polymorphism in hafnium metal

    SciTech Connect (OSTI)

    Pandey, K. K. Sharma, Surinder M.; Gyanchandani, Jyoti; Dey, G. K.; Somayazulu, M.; Sikka, S. K.

    2014-06-21

    There has been a recent controversy about the high pressure polymorphism of Hafnium (Hf). Unlike, the earlier known ??? structural transition at 38??8?GPa, at ambient temperature, Hrubiak et al. [J. Appl. Phys. 111, 112612 (2012)] did not observe it till 51?GPa. They observed this transition only at elevated temperatures. We have reinvestigated the room temperature phase diagram of Hf, employing x-ray diffraction (XRD) and DFT based first principles calculations. Experimental investigations have been carried out on several pure and impure Hf samples and also with different pressure transmitting media. Besides demonstrating the significant role of impurity levels on the high pressure phase diagram of Hf, our studies re-establish room temperature ??? transition at high pressures, even in quasi-hydrostatic environment. We observed this transition in pure Hf with equilibrium transition pressure P{sub o}?=?44.5?GPa; however, with large hysteresis. The structural sequence, transition pressures, the lattice parameters, the c/a ratio and its variation with compression for the ? and ? phases as predicted by our ab-initio scalar relativistic (SR) calculations are found to be in good agreement with our experimental results of pure Hf.

  19. Composition and microstructure of zirconium and hafnium germanates obtained by different chemical routes

    SciTech Connect (OSTI)

    Utkin, A.V. Prokip, V.E.; Baklanova, N.I.

    2014-01-15

    The phase composition and morphology of zirconium and hafnium germanates synthesized by ceramic and co-precipitation routes were studied. The products were characterized using high-temperature X-ray diffraction analysis (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and thermal (TG/DTA) analysis. To investigate the phase composition and stoichiometry of compounds the unit cell parameters were refined by full-profile Rietveld XRD analysis. The morphology of products and its evolution during high-temperature treatment was examined by SEM analysis. It was stated that there is the strong dependence of the phase composition and morphology of products on the preparation route. The ceramic route requires a multi-stage high-temperature treatment to obtain zirconium and hafnium germanates of 95% purity or more. Also, there are strong diffusion limitations to obtain hafnium germanate Hf{sub 3}GeO{sub 8} by ceramic route. On the contrary, the co-precipitation route leads to the formation of nanocrystalline single phase germanates of stoichiometric composition at a relatively low temperatures (less than 1000 C). The results of quantitative XRD analysis showed the hafnium germanates are stoichiometric compounds in contrast to zirconium germanates that form a set of solid solutions. This distinction may be related to the difference in the ion radii of Zr and Hf. - Graphical abstract: The phase composition and morphology of zirconium and hafnium germanates synthesized by ceramic and co-precipitation routes were studied. It was stated that there is the strong dependence of the phase composition and morphology of products on the preparation route. Display Omitted - Highlights: Zr and Hf germanates were synthesized by ceramic and co-precipitation routes. The morphology of products depends on the synthesis parameters. Zirconium germanates forms a set of solid solutions. Hafnium germanates are stoichiometric compounds.

  20. Vanadium Carbide Coating Process | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vanadium Carbide Coating Process Vanadium Carbide Coating Process Innovative Process Enhances Wear Resistance of Metals, Saving Energy, Waste, and Costs Traditional methods of coating steel surfaces with a layer of hard metal carbide require large capital investment, produce toxic and hazardous gases, are costly to operate, and require multiple heat-treatment steps during processing. Vanadium carbide (VC) coating technology provides a superior protective coating for steel surfaces and eliminates

  1. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  2. Conductivities and Seebeck Coefficients of Boron Carbides:

    Office of Scientific and Technical Information (OSTI)

    ''Softening-Bipolaron'' Hopping (Journal Article) | SciTech Connect Conductivities and Seebeck Coefficients of Boron Carbides: ''Softening-Bipolaron'' Hopping Citation Details In-Document Search Title: Conductivities and Seebeck Coefficients of Boron Carbides: ''Softening-Bipolaron'' Hopping The most conspicuous feature of boron carbides' electronic transport properties is their having both high carrier densities and large Seebeck coefficients. The magnitudes and temperature dependencies of

  3. Abrasive slurry composition for machining boron carbide

    DOE Patents [OSTI]

    Duran, Edward L. (Santa Fe, NM)

    1985-01-01

    An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

  4. Abrasive slurry composition for machining boron carbide

    DOE Patents [OSTI]

    Duran, E.L.

    1984-11-29

    An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

  5. Hafnium nitride buffer layers for growth of GaN on silicon

    DOE Patents [OSTI]

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  6. Shock-wave strength properties of boron carbide and silicon carbide

    SciTech Connect (OSTI)

    Grady, D.E.

    1994-02-01

    Time-resolved velocity interferometry measurements have been made on boron carbide and silicon carbide ceramics to assess dynamic equation-of-state and strength properties of these materials. Hugoniot pecursor characteristics, and post-yield shock and release wave properties, indicated markedly different dynamic strength and flow behavior for the two carbides.

  7. Conductivities and Seebeck Coefficients of Boron Carbides:'...

    Office of Scientific and Technical Information (OSTI)

    Conductivities and Seebeck Coefficients of Boron Carbides: ''Softening-Bipolaron'' Hopping Citation Details In-Document Search Title: Conductivities and Seebeck Coefficients of...

  8. Silicon carbide fibers and articles including same

    DOE Patents [OSTI]

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  9. Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

    SciTech Connect (OSTI)

    Petrosky, J. C.; McClory, J. W.; Bielejec, Edward Salvador; Foster, J. C.

    2010-10-01

    Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

  10. On the phase formation of sputtered hafnium oxide and oxynitride films

    SciTech Connect (OSTI)

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-07-15

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O{sub 2}-N{sub 2} atmosphere. It is shown that the presence of N{sub 2} allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O{sub 2} partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O{sup -} ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O{sup -} ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O{sup -} ion flux without N{sub 2} addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO{sub 2} is independent from the O{sup -} bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO{sub 2} crystal structure at the expense of the monoclinic HfO{sub 2} one.

  11. Fact Sheet: Award-Winning Silicon Carbide Power Electronics ...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Award-Winning Silicon Carbide Power Electronics (October 2012) Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012) Operating at high temperatures and with ...

  12. Preparation of silicon carbide fibers

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12

    Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

  13. The production of iron carbide

    SciTech Connect (OSTI)

    Anderson, K.M.; Scheel, J.

    1997-12-31

    From start-up in 1994 to present, Nucor`s Iron Carbide plant has overcome many obstacles in achieving design production. Many of these impediments were due to flaws in equipment design. With the integration existing within the plant, limitations in any one system reduced the operating capacity of others. For this reason, as modifications were made and system capacities were increased, the need for additional modifications became apparent. Subsequently, operating practices, maintenance scheduling, employee incentives, and production objectives were continually adapted. This paper discusses equipment and design corrections and the quality issues that contributed to achieving the plant`s production capacity.

  14. Titanium carbide bipolar plate for electrochemical devices

    DOE Patents [OSTI]

    LaConti, Anthony B. (Lynnfield, MA); Griffith, Arthur E. (Lynn, MA); Cropley, Cecelia C. (Acton, MA); Kosek, John A. (Danvers, MA)

    2000-07-04

    A corrosion resistant, electrically conductive, non-porous bipolar plate is made from titanium carbide for use in an eletrochemical device. The process involves blending titanium carbide powder with a suitable binder material, and molding the mixture, at an elevated temperature and pressure.

  15. Determination of Ideal Broth Formulations Needed to Prepare Hydrous Hafnium Oxide Microspheres via the Internal Gelation Process

    SciTech Connect (OSTI)

    Collins, Jack Lee; Hunt, Rodney Dale; Simmerman, S. G.

    2009-02-01

    A simple test-tube methodology was used to determine optimum process parameters for preparing hydrous hafnium oxide microspheres by the internal gelation process. Broth formulations of hafnyl chloride [HfOCl{sub 2}], hexamethylenetetramine, and urea were found that can be used to prepare hydrous hafnium oxide gel spheres in the temperature range of 70-90 C. A few gel-forming runs were made in which microspheres were prepared with some of these formulations in order to equate the test-tube gelation times with actual gelation times. These preparations confirmed that the test-tube methodology is reliable for determining the ideal broths.

  16. LIQUID PHASE SINTERING OF METALLIC CARBIDES

    DOE Patents [OSTI]

    Hammond, J.; Sease, J.D.

    1964-01-21

    An improved method is given for fabricating uranium carbide composites, The method comprises forming a homogeneous mixture of powdered uranium carbide, a uranium intermetallic compound which wets and forms a eutectic with said carbide and has a non-uranium component which has a relatively high vapor pressure at a temperature in the range 1200 to 1500 deg C, and an organic binder, pressing said mixture to a composite of desired green strength, and then vacuum sintering said composite at the eutectic forming temperature for a period sufficient to remove at least a portion of the non-uranium containing component of said eutectic. (AEC)

  17. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  18. Union Carbides Last 20 Years in Oak Ridge ? part 3

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    national news event that captured Carbide's top management attention was the Three Mile Island, Pennsylvania nuclear accident. ORNL responded quickly, sending experts to help....

  19. A look back at Union Carbides first 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    from Manhattan District. "March, 1948 - Carbide accepted operating contract, and name was changed to Oak Ridge National Laboratory. "1948 - Construction started on...

  20. Fabrication of thorium bearing carbide fuels

    DOE Patents [OSTI]

    Gutierrez, R.L.; Herbst, R.J.; Johnson, K.W.R.

    Thorium-uranium carbide and thorium-plutonium carbide fuel pellets have been fabricated by the carbothermic reduction process. Temperatures of 1750/sup 0/C and 2000/sup 0/C were used during the reduction cycle. Sintering temperatures of 1800/sup 0/C and 2000/sup 0/C were used to prepare fuel pellet densities of 87% and > 94% of theoretical, respectively. The process allows the fabrication of kilogram quantities of fuel with good reproductibility of chemical and phase composition.

  1. Conductivities and Seebeck Coefficients of Boron Carbides:

    Office of Scientific and Technical Information (OSTI)

    ''Softening-Bipolaron'' Hopping (Journal Article) | SciTech Connect Conductivities and Seebeck Coefficients of Boron Carbides: ''Softening-Bipolaron'' Hopping Citation Details In-Document Search Title: Conductivities and Seebeck Coefficients of Boron Carbides: ''Softening-Bipolaron'' Hopping × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public

  2. Selective etching of silicon carbide films

    DOE Patents [OSTI]

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  3. Joining of porous silicon carbide bodies

    DOE Patents [OSTI]

    Bates, Carl H. (Worcester, MA); Couhig, John T. (Worcester, MA); Pelletier, Paul J. (Thompson, CT)

    1990-05-01

    A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

  4. Fabrication of thorium bearing carbide fuels

    DOE Patents [OSTI]

    Gutierrez, Rueben L. (Los Alamos, NM); Herbst, Richard J. (Los Alamos, NM); Johnson, Karl W. R. (Los Alamos, NM)

    1981-01-01

    Thorium-uranium carbide and thorium-plutonium carbide fuel pellets have been fabricated by the carbothermic reduction process. Temperatures of 1750.degree. C. and 2000.degree. C. were used during the reduction cycle. Sintering temperatures of 1800.degree. C. and 2000.degree. C. were used to prepare fuel pellet densities of 87% and >94% of theoretical, respectively. The process allows the fabrication of kilogram quantities of fuel with good reproducibility of chemicals and phase composition. Methods employing liquid techniques that form carbide microspheres or alloying-techniques which form alloys of thorium-uranium or thorium-plutonium suffer from limitation on the quantities processed of because of criticality concerns and lack of precise control of process conditions, respectively.

  5. Carbides composite surface layers produced by (PTA)

    SciTech Connect (OSTI)

    Tajoure, Meloud; Tajouri, Ali E-mail: dr.mokhtarphd@yahoo.com; Abuzriba, Mokhtar E-mail: dr.mokhtarphd@yahoo.com; Akreem, Mosbah

    2013-12-16

    The plasma transferred arc technique was applied to deposit a composite layer of nickel base with tungsten carbide in powder form on to surface of low alloy steel 18G2A type according to polish standard. Results showed that, plasma transferred arc hard facing process was successfully conducted by using Deloro alloy 22 plus tungsten carbide powders. Maximum hardness of 1489 HV and minimum dilution of 8.4 % were achieved by using an arc current of 60 A. However, when the current was further increased to 120 A and the dilution increases with current increase while the hardness decreases. Microstructure of the nickel base deposit with tungsten carbide features uniform distribution of reinforcement particles with regular grain shape half - dissolved in the matrix.

  6. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  7. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    SciTech Connect (OSTI)

    Zhou, Dayu, E-mail: zhoudayu@dlut.edu.cn [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China) [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xu, Jin [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China)] [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China); Li, Qing; Guan, Yan [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)] [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Cao, Fei; Dong, Xianlin [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)] [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Mller, Johannes [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany)] [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany); Schenk, Tony; Schrder, Uwe [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)] [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)

    2013-11-04

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO{sub 2} film under bipolar pulsed-field operation. High field cycling causes a wake-up in virgin pinched polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.

  8. Tailoring the index of refraction of nanocrystalline hafnium oxide thin films

    SciTech Connect (OSTI)

    Vargas, Mirella [Department of Metallurgical and Materials Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)] [Department of Metallurgical and Materials Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States); Murphy, N. R. [Materials and Manufacturing Directorate (RX), 3005 Hobson Way, Wright-Patterson Air Force Base (WPAFB), Dayton, Ohio 45433 (United States)] [Materials and Manufacturing Directorate (RX), 3005 Hobson Way, Wright-Patterson Air Force Base (WPAFB), Dayton, Ohio 45433 (United States); Ramana, C. V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

    2014-03-10

    Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s}?=?25700?C). HfO{sub 2} films grown at T{sub s}?

  9. Liquid phase sintering of silicon carbide

    DOE Patents [OSTI]

    Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

    1989-05-09

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

  10. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  11. Prealloyed catalyst for growing silicon carbide whiskers

    DOE Patents [OSTI]

    Shalek, Peter D. (Los Alamos, NM); Katz, Joel D. (Niagara Falls, NY); Hurley, George F. (Los Alamos, NM)

    1988-01-01

    A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the .beta. form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.

  12. High Q silicon carbide microdisk resonator

    SciTech Connect (OSTI)

    Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X.-L.; Lin, Qiang

    2014-05-05

    We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12??10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

  13. Method for fabricating boron carbide articles

    DOE Patents [OSTI]

    Ardary, Zane L. (Oak Ridge, TN); Reynolds, Carl D. (Clinton, TN)

    1980-01-01

    The present invention is directed to the fabrication of boron carbide articles having length-to-diameter or width ratios greater than 2 to 1. The process of the present invention is practiced by the steps comprising hot pressing boron carbide powder into article segments or portions in which the segments have a length-to-diameter or width ratio less than 1.5, aligning a plurality of the initially hot-pressed segments in a hot-pressing die with the end surfaces of the segments placed in intimate contact with one another, and then hot pressing the aligned segments into an article of the desired configuration. The resulting article exhibits essentially uniform density throughout the structure with the bonds between the segments being equivalent in hardness, strength, and density to the remainder of the article.

  14. Diamond-silicon carbide composite and method

    DOE Patents [OSTI]

    Zhao, Yusheng (Los Alamos, NM)

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  15. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test themore » quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.« less

  16. Investigation of crystallization processes from hafnium silicate powders prepared from an oxychloride sol-gel

    SciTech Connect (OSTI)

    McGilvery, Catriona M.; De Gendt, S; Payzant, E Andrew; Craven, A J; MacKenzie, M; McComb, D W

    2012-01-01

    Hafnium oxide and silicate materials are now incorporated into working CMOS devices, however the crystallisation mechanism is still poorly understood. In particular, addition of SiO2 to HfO2 has been shown to increase the crystallisation temperature of HfO2 hence allowing it to remain amorphous under current processing conditions. Building on earlier work we here investigate bulk HfxSi1-xO2 samples to determine the effect of SiO2 on the crystallisation pathway. Techniques such as XRD, HTXRD, thermal analysis techniques and TEM are used. It is found that the addition of SiO2 has very little affect on the crystallisation path at temperatures below 900 C but at higher temperatures a second t-HfO2 phase nucleates and is stabilised due to the strain of the surrounding amorphous SiO2 material. With an increase in SiO2 content the temperature at which this nucleation and stabilisation occurs is increased. The effect of strain has implications for inhibiting the crystallisation of the high-k layer, reduction of grain boundaries and hence diffusion, reduction of formation of interface layers and the possibility of stabilising t-HfO2 rather than m-HfO2 hence increasing the dielectric of the layer.

  17. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    SciTech Connect (OSTI)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test the quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.

  18. Boron-carbide-aluminum and boron-carbide-reactive metal cermets

    DOE Patents [OSTI]

    Halverson, Danny C. (Manteca, CA); Pyzik, Aleksander J. (Seattle, WA); Aksay, Ilhan A. (Seattle, WA)

    1986-01-01

    Hard, tough, lightweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidation step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modulus of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi.sqroot.in. These composites and methods can be used to form a variety of structural elements.

  19. Bipolaron Hopping Conduction in Boron Carbides (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Language: English Subject: 36 MATERIALS SCIENCE; BORON CARBIDES; ELECTRIC CONDUCTIVITY; TEMPERATURE RANGE 0400-1000 K; POLARONS; ACTIVATION ENERGY; SEEBECK EFFECT; CARRIER DENSITY

  20. Silicon dioxide and hafnium dioxide evaporation characteristics from a high-frequency sweep e-beam system

    SciTech Connect (OSTI)

    Chow, R. [Lawrence Livermore National Laboratory, Livermore, California 94551-0808 (United States); Tsujimoto, N. [MDC Vacuum Products Corporation, Hayward, California 94545 (United States)

    1996-09-01

    Reactive oxygen evaporation characteristics were determined as a function of the front-panel control parameters provided by a programmable, high-frequency sweep e-beam system. An experimental design strategy used deposition rate, beam speed, pattern, azimuthal rotation speed, and dwell time as the variables. The optimal settings for obtaining a broad thickness distribution, efficient silicon dioxide boule consumption, and minimal hafnium dioxide defect density were generated. The experimental design analysis showed the compromises involved with evaporating these oxides. {copyright} {ital 1996 Optical Society of America.}

  1. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOE Patents [OSTI]

    Petrovic, J.J.

    1995-01-17

    Compositions are disclosed consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  2. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOE Patents [OSTI]

    Petrovic, John J. (Los Alamos, NM)

    1995-01-01

    Compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  3. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Nanocomposites for Drill Bits | Department of Energy Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits PDF icon nanocomposites_drill_bits.pdf More Documents & Publications ITP Nanomanufacturing: Nanomanufacturing Portfolio: Manufacturing Processes and Applications to Accelerate Commercial Use of Nanomaterials, January 2011 A History or

  4. Computational Studies of Physical Properties of Boron Carbide

    SciTech Connect (OSTI)

    Lizhi Ouyang

    2011-09-30

    The overall goal is to provide valuable insight in to the mechanisms and processes that could lead to better engineering the widely used boron carbide which could play an important role in current plight towards greener energy. Carbon distribution in boron carbide, which has been difficult to retrieve from experimental methods, is critical to our understanding of its structure-properties relation. For modeling disorders in boron carbide, we implemented a first principles method based on supercell approach within our G(P,T) package. The supercell approach was applied to boron carbide to determine its carbon distribution. Our results reveal that carbon prefers to occupy the end sites of the 3-atom chain in boron carbide and further carbon atoms will distribute mainly on the equatorial sites with a small percentage on the 3-atom chains and the apex sites. Supercell approach was also applied to study mechanical properties of boron carbide under uniaxial load. We found that uniaxial load can lead to amorphization. Other physical properties of boron carbide were calculated using the G(P,T) package.

  5. Silicon Carbide in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the GE Global Research Clean Room: Silicon Carbide Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inside the GE Global Research Clean Room: Silicon Carbide GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-research The Dirt

  6. UNION CARBIDE MZALS DIVISION tiiAGARA FALLS, NEW YDRK

    Office of Legacy Management (LM)

    PRELIF",INARY SURVEY 0' ELECTRDMET iORPDF.&TiCIN UNION CARBIDE MZALS DIVISION tiiAGARA FALLS, NEW YDRK Work performed by the Health and Safety Research Division Dak Ridge National Laboratory Oak Ridge, Tennessee 37830 OAK RIDGE NATIONAL LABORATORY operated by UNION CARBIDE CORPORATION for the DEPARTMENT OF ENERGY as part of the Fornierly Utilized Sites-- Remedial Action Program ,ELECTRD?'ISi 60RPOR:TION UNiON CARBIDE METALS DIVlSIOti NiASARA FALLS, NEA YORK At the requests o f the

  7. Method of producing silicon carbide articles

    DOE Patents [OSTI]

    Milewski, John V. (Los Alamos, NM)

    1985-01-01

    A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

  8. Method of preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals

    DOE Patents [OSTI]

    Peng, Yu-Min (Hsinchu, TW); Wang, Jih-Wen (Hsinchu, TW); Liue, Chun-Ying (Tau-Yung, TW); Yeh, Shinn-Horng (Kaohsiung, TW)

    1994-01-01

    A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

  9. Raman and FTIR Studies on Nanostructure Formation on Silicon Carbide

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Raman and FTIR Studies on Nanostructure Formation on Silicon Carbide Citation Details In-Document Search Title: Raman and FTIR Studies on Nanostructure Formation on Silicon Carbide No abstract prepared. Authors: Muntele, Iulia C. [1] ; Muntele, C. I. [1] ; Ila, Dr. Daryush [1] ; Poker, David B [2] ; Hensley, Dale K [2] + Show Author Affiliations Alabama A&M University, Normal ORNL Publication Date: 2003-01-01 OSTI Identifier: 978142 DOE Contract Number:

  10. Understanding the Irradiation Behavior of Zirconium Carbide

    SciTech Connect (OSTI)

    Motta, Arthur; Sridharan, Kumar; Morgan, Dane; Szlufarska, Izabela

    2013-10-11

    Zirconium carbide (ZrC) is being considered for utilization in high-temperature gas-cooled reactor fuels in deep-burn TRISO fuel. Zirconium carbide possesses a cubic B1-type crystal structure with a high melting point, exceptional hardness, and good thermal and electrical conductivities. The use of ZrC as part of the TRISO fuel requires a thorough understanding of its irradiation response. However, the radiation effects on ZrC are still poorly understood. The majority of the existing research is focused on the radiation damage phenomena at higher temperatures (>450{degree}C) where many fundamental aspects of defect production and kinetics cannot be easily distinguished. Little is known about basic defect formation, clustering, and evolution of ZrC under irradiation, although some atomistic simulation and phenomenological studies have been performed. Such detailed information is needed to construct a model describing the microstructural evolution in fast-neutron irradiated materials that will be of great technological importance for the development of ZrC- based fuel. The goal of the proposed project is to gain fundamental understanding of the radiation-induced defect formation in zirconium carbide and irradiation response (ZrC) by using a combination of state-of-the-art experimental methods and atomistic modeling. This project will combine (1) in situ ion irradiation at a specialized facility at a national laboratory, (2) controlled temperature proton irradiation on bulk samples, and (3) atomistic modeling to gain a fundamental understanding of defect formation in ZrC. The proposed project will cover the irradiation temperatures from cryogenic temperature to as high as 800{degree}C, and dose ranges from 0.1 to 100 dpa. The examination of this wide range of temperatures and doses allows us to obtain an experimental data set that can be effectively used to exercise and benchmark the computer calculations of defect properties. Combining the examination of radiation-induced microstructures mapped spatially and temporally, microstructural evolution during post-irradiation annealing, and atomistic modeling of defect formation and transport energetics will provide new, critical understanding about property changes in ZrC. The behavior of materials under irradiation is determined by the balance between damage production, defect clustering, and lattice response. In order to predict those effects at high temperatures so targeted testing can be expanded and extrapolated beyond the known database, it is necessary to determine the defect energetics and mobilities as these control damage accumulation and annealing. In particular, low-temperature irradiations are invaluable for determining the regions of defect mobility. Computer simulation techniques are particularly useful for identifying basic defect properties, especially if closely coupled with a well-constructed and complete experimental database. The close coupling of calculation and experiment in this project will provide mutual benchmarking and allow us to glean a deeper understanding of the irradiation response of ZrC, which can then be applied to the prediction of its behavior in reactor conditions.

  11. Nanostructured carbide catalysts for the hydrogen economy

    SciTech Connect (OSTI)

    Ram Seshadri, Susannah Scott, Juergen Eckert

    2008-07-21

    The above quote, taken from the executive summary of the Report from the US DOE Basic Energy Sciences Workshop held August 6–8, 2007,[1] places in context the research carried out at the University of California, Santa Barbara, which is reported in this document. The enormous impact of heterogeneous catalysis is exemplified by the Haber process for the synthesis of ammonia, which consumes a few % of the world’s energy supply and natural gas, and feeds as many as a third of the world’s population. While there have been numerous advances in understanding the process,[2] culminating in the awarding of the Nobel Prize to Gerhard Ertl in 2007, it is interesting to note that the catalysts themselves have changed very little since they were discovered heuristically in the the early part of the 20th century. The thesis of this report is that modern materials chemistry, with all the empirical knowledge of solid state chemistry, combined with cutting edge structural tools, can help develop and better heterogeneous catalysis. The first part of this report describes research in the area of early transition metal carbides (notably of Mo and W), potentially useful catalysts for water gas shift (WGS) and related reactions of use to the hydrogen economy. Although these carbides have been known to be catalytically useful since the 1970s,[3] further use of these relatively inexpensive materials have been plagued by issues of low surface areas and ill-defined, and often unreactive surfaces, in conjunction with deactivation. We have employed for the first time, a combination of constant-wavelength and time-of-flight neutron scattering, including a total scattering analysis of the latter data, to better understand what happens in these materials, in a manner that for the first time, reveals surface graphitic carbon in these materials in a quantitative manner. Problems of preparation, surface stability, and irreversible reactivity have become manifest in this class of materials that discourage us from pursuing these materials further.

  12. Structure-Property Relationship in Metal Carbides and Bimetallic Alloys

    SciTech Connect (OSTI)

    Chen, Jingguan

    2014-03-04

    The primary objective of our DOE/BES sponsored research is to use carbide and bimetallic catalysts as model systems to demonstrate the feasibility of tuning the catalytic activity, selectivity and stability. Our efforts involve three parallel approaches, with the aim at studying single crystal model surfaces and bridging the materials gap and pressure gap between fundamental surface science studies and real world catalysis. The utilization of the three parallel approaches has led to the discovery of many intriguing catalytic properties of carbide and bimetallic surfaces and catalysts. During the past funding period we have utilized these combined research approaches to explore the possibility of predicting and verifying bimetallic and carbide combinations with enhanced catalytic activity, selectivity and stability.

  13. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  14. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  15. The growth mechanism of grain boundary carbide in Alloy 690

    SciTech Connect (OSTI)

    Li, Hui; Xia, Shuang; Zhou, Bangxin; Peng, Jianchao

    2013-07-15

    The growth mechanism of grain boundary M{sub 23}C{sub 6} carbides in nickel base Alloy 690 after aging at 715 C was investigated by high resolution transmission electron microscopy. The grain boundary carbides have coherent orientation relationship with only one side of the matrix. The incoherent phase interface between M{sub 23}C{sub 6} and matrix was curved, and did not lie on any specific crystal plane. The M{sub 23}C{sub 6} carbide transforms from the matrix phase directly at the incoherent interface. The flat coherent phase interface generally lies on low index crystal planes, such as (011) and (111) planes. The M{sub 23}C{sub 6} carbide transforms from a transition phase found at curved coherent phase interface. The transition phase has a complex hexagonal crystal structure, and has coherent orientation relationship with matrix and M{sub 23}C{sub 6}: (111){sub matrix}//(0001){sub transition}//(111){sub carbide}, <112{sup }>{sub matrix}//<21{sup }10>{sub transition}//<112{sup }>{sub carbide}. The crystal lattice constants of transition phase are c{sub transition}=?(3)a{sub matrix} and a{sub transition}=?(6)/2a{sub matrix}. Based on the experimental results, the growth mechanism of M{sub 23}C{sub 6} and the formation mechanism of transition phase are discussed. - Highlights: A transition phase was observed at the coherent interfaces of M{sub 23}C{sub 6} and matrix. The transition phase has hexagonal structure, and is coherent with matrix and M{sub 23}C{sub 6}. The M{sub 23}C{sub 6} transforms from the matrix directly at the incoherent phase interface.

  16. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, George C. (Oak Ridge, TN)

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  17. Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride

    DOE Patents [OSTI]

    Koc, Rasit (Lakewood, CO); Glatzmaier, Gregory C. (Boulder, CO)

    1995-01-01

    A process for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.

  18. Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride

    DOE Patents [OSTI]

    Koc, R.; Glatzmaier, G.C.

    1995-05-23

    A process is disclosed for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.

  19. Computational Approach to Photonic Drilling of Silicon Carbide

    SciTech Connect (OSTI)

    Samant, Anoop N; Daniel, Claus; Chand, Ronald H; Blue, Craig A; Dahotre, Narendra B

    2009-01-01

    The ability of lasers to carry out drilling processes in silicon carbide ceramic was investigated in this study. A JK 701 pulsed Nd:YAG laser was used for drilling through the entire depth of silicon carbide plates of different thicknesses. The laser parameters were varied in different combinations for a well controlled drilling through the entire thickness of the SiC plates. A drilling model incorporating effects of various physical phenomena such as decomposition, evaporation induced recoil pressure, and surface tension was developed. Such comprehensive model was capable of advance prediction of the energy and time required for drilling a hole through any desired depth of material.

  20. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, A.V.; Balooch, M.; Moalem, M.

    1999-01-19

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

  1. Process for preparing fine grain titanium carbide powder

    DOE Patents [OSTI]

    Janney, M.A.

    1985-03-12

    A method for preparing finely divided titanium carbide powder in which an organotitanate is reacted with a carbon precursor polymer to provide an admixture of the titanium and the polymer at a molecular level due to a crosslinking reaction between the organotitanate and the polymer. The resulting gel is dried, pyrolyzed to drive off volatile components and provide carbon. The resulting solids are then heated at an elevated temperature to convert the titanium and carbon to high-purity titanium carbide powder in a submicron size range.

  2. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

    1999-01-01

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  3. Process for preparing fine grain titanium carbide powder

    DOE Patents [OSTI]

    Janey, Mark A. (Concord, TN)

    1986-01-01

    A method for preparing finely divided titanium carbide powder in which an organotitanate is reacted with a carbon precursor polymer to provide an admixture of the titanium and the polymer at a molecular-level due to a crosslinking reaction between the organotitanate and the polymer. The resulting gel is dried, pyrolyzed to drive off volatile components and provide carbon. The resulting solids are then heated at an elevated temperature to convert the titanium and carbon to high-purity titanium carbide powder in a submicron size range.

  4. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  5. Boron-carbide-aluminum and boron-carbide-reactive metal cermets. [B/sub 4/C-Al

    DOE Patents [OSTI]

    Halverson, D.C.; Pyzik, A.J.; Aksay, I.A.

    1985-05-06

    Hard, tough, lighweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidated step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modules of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi..sqrt..in. These composites and methods can be used to form a variety of structural elements.

  6. Method for homogenizing alloys susceptible to the formation of carbide stringers and alloys prepared thereby

    DOE Patents [OSTI]

    Braski, David N. (Oak Ridge, TN); Leitnaker, James M. (Kingston, TN)

    1980-01-01

    A novel fabrication procedure prevents or eliminates the reprecipitation of segregated metal carbides such as stringers in Ti-modified Hastelloy N and stainless steels to provide a novel alloy having carbides uniformly dispersed throughout the matrix. The fabrication procedure is applicable to other alloys prone to the formation of carbide stringers. The process comprises first annealing the alloy at a temperature above the single phase temperature for sufficient time to completely dissolve carbides and then annealing the single phase alloy for an additional time to prevent the formation of carbide stringers upon subsequent aging or thermomechanical treatment.

  7. Nuclear breeder reactor fuel element with silicon carbide getter

    DOE Patents [OSTI]

    Christiansen, David W. (Kennewick, WA); Karnesky, Richard A. (Richland, WA)

    1987-01-01

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  8. Method of deposition of silicon carbide layers on substrates

    DOE Patents [OSTI]

    Angelini, P.; DeVore, C.E.; Lackey, W.J.; Blanco, R.E.; Stinton, D.P.

    1982-03-19

    A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.

  9. Tungsten-yttria carbide coating for conveying copper

    DOE Patents [OSTI]

    Rothman, Albert J. (Livermore, CA)

    1993-01-01

    A method is provided for providing a carbided-tungsten-yttria coating on the interior surface of a copper vapor laser. The surface serves as a wick for the condensation of liquid copper to return the condensate to the interior of the laser for revolatilization.

  10. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    SciTech Connect (OSTI)

    Katoh, Yutai; Koyanagi, Takaaki; Kiggans, Jim; Cetiner, Nesrin; McDuffee, Joel

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  11. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    SciTech Connect (OSTI)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. This SiC made by our LSI process meets the thermal properties required for use in high temperature heat exchanger. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin. AC and DC electrical measurements were made to follow the thermal conversion of microcrystalline cellulose to carbon. This study identifies five regions of electrical conductivity that can be directly correlated to the chemical decomposition and microstructural evolution during carbonization. In Region I, a decrease in overall AC conductivity occurs due to the initial loss of the polar groups from cellulose molecules. In Region II, the AC conductivity starts to increase with heat treatment temperature due to the formation and growth of conducting carbon clusters. In Region III, a further increase of AC conductivity with increasing heat treatment temperature is obs

  12. Diamond-Silicon Carbide Composite And Method For Preparation Thereof

    DOE Patents [OSTI]

    Qian, Jiang (Los Alamos, NM); Zhao, Yusheng (Los Alamos, NM)

    2005-09-06

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  13. Protective coating for alumina-silicon carbide whisker composites

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN)

    1989-01-01

    Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

  14. Process for growing silicon carbide whiskers by undercooling

    DOE Patents [OSTI]

    Shalek, P.D.

    1987-10-27

    A method of growing silicon carbide whiskers, especially in the [beta] form, is disclosed using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection. 3 figs.

  15. Process for growing silicon carbide whiskers by undercooling

    DOE Patents [OSTI]

    Shalek, Peter D. (Los Alamos, NM)

    1987-01-01

    A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.

  16. Ceramic composites reinforced with modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1990-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  17. Method for removing oxide contamination from silicon carbide powders

    DOE Patents [OSTI]

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

  18. Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012)

    Energy Savers [EERE]

    | Department of Energy Award-Winning Silicon Carbide Power Electronics (October 2012) Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012) Operating at high temperatures and with reduced energy losses, two silicon carbide power electronics (PE) projects were awarded the prestigious R&D 100 Award. This technology was funded as a Small Business Innovation Research project as part of DOE's Energy Storage Program effort to develop and commercialize a new generation of

  19. PRELIMINARY SURVEY OF THE UNION CARBIDE CORPORATION METALS DIVISION PLANT, NIAGARA FALLS, NEW YORK

    Office of Legacy Management (LM)

    e - .' N"lr 7% PRELIMINARY SURVEY OF THE UNION CARBIDE CORPORATION METALS DIVISION PLANT, NIAGARA FALLS, NEW YORK Work performed by the Health and Safety Research Division Oak Ridge Natjonal Laboratory Oak Ridge, Tennessee 37830 December 1980 OAK RIDGE NATIONAL LABORATORY operated by UNION CARBIDE CORPORATION for the DEPARTMENT OF ENERGY as part of the Formerly Utilized Sites-- Remedial Action Program PRELIMINARY SURVEY OF THE UNION CARBIDE CORPORATION METALS DIVISION PLANT, NIAGARA FALLS,

  20. Synthesis of uranium nitride and uranium carbide powder by carbothermic reduction

    SciTech Connect (OSTI)

    Dunwoody, J.T.; Stanek, C.R.; McClellan, K.J.; Voit, S.L.; Volz, H.M.; Hickman, R.R.

    2007-07-01

    Uranium nitride and uranium carbide are being considered as high burnup fuels in next generation nuclear reactors and accelerated driven systems for the transmutation of nuclear waste. The same characteristics that make nitrides and carbides candidates for these applications (i.e. favorable thermal properties, mutual solubility of nitrides, etc.), also make these compositions candidate fuels for space nuclear reactors. In this paper, we discuss the synthesis and characterization of depleted uranium nitride and carbide for a space nuclear reactor program. Importantly, this project emphasized that to synthesize high quality uranium nitride and carbide, it is necessary to understand the exact stoichiometry of the oxide feedstock. (authors)

  1. Tunable carbon nanotube-tungsten carbide nanoparticles heterostructures by vapor deposition

    SciTech Connect (OSTI)

    Xia, Min; Guo, Hongyan; Ge, Changchun; Yan, Qingzhi Lang, Shaoting

    2014-05-14

    A simple, versatile route for the synthesis of carbon nanotube (CNT)-tungsten carbide nanoparticles heterostructures was set up via vapor deposition process. For the first time, amorphous CNTs (?-CNTs) were used to immobilized tungsten carbide nanoparticles. By adjusting the synthesis and annealing temperature, ?-CNTs/amorphous tungsten carbide, ?-CNTs/W{sub 2}C, and CNTs/W{sub 2}C/WC heterostructures were prepared. This approach provides an efficient method to attach other metal carbides and other nanoparticles to carbon nanotubes with tunable properties.

  2. Irradiation and annealing of p-type silicon carbide

    SciTech Connect (OSTI)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ? 1.5 10{sup 18} cm{sup ?3} occurs at an irradiation dose of ?1.1 10{sup 16} cm{sup ?2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ?1000C. The conductivity is almost completely restored at T ? 1200C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  3. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

    1994-07-26

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

  4. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, Jr., Dominic J. (Idaho Falls, ID); Herman, Herbert (Port Jefferson, NY); Burchell, Timothy D. (Oak Ridge, TN)

    1994-01-01

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

  5. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOE Patents [OSTI]

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  6. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    SciTech Connect (OSTI)

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  7. Infrared study on room-temperature atomic layer deposition of HfO{sub 2} using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents

    SciTech Connect (OSTI)

    Kanomata, Kensaku [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510, Japan and Japan Society for the Promotion of Science, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Ohba, Hisashi; Pungboon Pansila, P.; Ahmmad, Bashir; Kubota, Shigeru; Hirahara, Kazuhiro; Hirose, Fumihiko, E-mail: fhirose@yz.yamagata-u.ac.jp [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan)

    2015-01-01

    Room-temperature atomic layer deposition (ALD) of HfO{sub 2} was examined using tetrakis (ethylmethylamino)hafnium (TEMAH) and remote plasma-excited water and oxygen. A growth rate of 0.26?nm/cycle at room temperature was achieved, and the TEMAH adsorption and its oxidization on HfO{sub 2} were investigated by multiple internal reflection infrared absorption spectroscopy. It was observed that saturated adsorption of TEMAH occurs at exposures of ?1??10{sup 5}?L (1 L?=?1??10{sup ?6} Torr s) at room temperature, and the use of remote plasma-excited water and oxygen vapor is effective in oxidizing the TEMAH molecules on the HfO{sub 2} surface, to produce OH sites. The infrared study suggested that HfOH plays a role as an adsorption site for TEMAH. The reaction mechanism of room temperature HfO{sub 2} ALD is discussed in this paper.

  8. Replacing precious metals with carbide catalysts for hydrogenation reactions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ruijun, Hou; Chen, Jingguang G.; Chang, Kuan; Wang, Tiefeng

    2015-03-03

    Molybdenum carbide (Mo₂C and Ni/Mo₂C) catalysts were compared with Pd/SiO₂ for the hydrogenation of several diene molecules, 1,3- butadiene, 1,3- and 1,4-cyclohexadiene (CHD). Compared to Pd/SiO₂, Mo₂C showed similar hydrogenation rate for 1,3-butadiene and 1,3-CHD and even higher rate for 1,4-CHD, but with significant deactivation rate for 1,3-CHD hydrogenation. However, the hydrogenation activity of Mo₂C could be completely regenerated by H₂ treatment at 723 K for the three molecules. The Ni modified Mo₂C catalysts retained similar activity for 1,3-butadiene hydrogenation with significantly enhanced selectivity for 1-butene production. The 1-butene selectivity increased with increasing Ni loading below 15%. Among the Nimore » modified Mo₂C catalysts, 8.6%Ni/Mo₂C showed the highest selectivity to 1-butene, which was even higher selectivity than that over Pd/SiO₂. Compared to Pd/SiO₂, both Mo₂C and Ni/Mo₂C showed combined advantages in hydrogenation activity and catalyst cost reduction, demonstrating the potential to use less expensive carbide catalysts to replace precious metals for hydrogenation reactions.« less

  9. Replacing precious metals with carbide catalysts for hydrogenation reactions

    SciTech Connect (OSTI)

    Ruijun, Hou; Chen, Jingguang G.; Chang, Kuan; Wang, Tiefeng

    2015-03-03

    Molybdenum carbide (Mo?C and Ni/Mo?C) catalysts were compared with Pd/SiO? for the hydrogenation of several diene molecules, 1,3- butadiene, 1,3- and 1,4-cyclohexadiene (CHD). Compared to Pd/SiO?, Mo?C showed similar hydrogenation rate for 1,3-butadiene and 1,3-CHD and even higher rate for 1,4-CHD, but with significant deactivation rate for 1,3-CHD hydrogenation. However, the hydrogenation activity of Mo?C could be completely regenerated by H? treatment at 723 K for the three molecules. The Ni modified Mo?C catalysts retained similar activity for 1,3-butadiene hydrogenation with significantly enhanced selectivity for 1-butene production. The 1-butene selectivity increased with increasing Ni loading below 15%. Among the Ni modified Mo?C catalysts, 8.6%Ni/Mo?C showed the highest selectivity to 1-butene, which was even higher selectivity than that over Pd/SiO?. Compared to Pd/SiO?, both Mo?C and Ni/Mo?C showed combined advantages in hydrogenation activity and catalyst cost reduction, demonstrating the potential to use less expensive carbide catalysts to replace precious metals for hydrogenation reactions.

  10. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOE Patents [OSTI]

    Glatzmaier, G.C.

    1994-06-28

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

  11. Optical limiting effects in nanostructured silicon carbide thin films

    SciTech Connect (OSTI)

    Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu; Semenov, A V

    2013-12-31

    We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at ? = 532 nm (I{sub cl} ? 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at ? = 1064 nm (I{sub cl} ? 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

  12. The world`s first commercial iron carbide plant

    SciTech Connect (OSTI)

    Prichard, L.C.; Schad, D.

    1995-12-01

    The paper traces the development of Nucor`s investigation of clean iron unit processes, namely, direct reduction, and the decision to build and operate the world`s first commercial iron carbide plant. They first investigated coal based processes since the US has abundant coal reserves, but found a variety of reasons for dropping the coal-based processes from further consideration. A natural gas based process was selected, but the failure to find economically priced gas supplies stopped the development of a US based venture. It was later found that Trinidad had economically priced and abundant supplies of natural gas, and the system of government, the use of English language, and geographic location were also ideal. The cost estimates required modification of the design, but the plant was begun in April, 1993. Start-up problems with the plant are also discussed. Production should commence shortly.

  13. High surface area silicon carbide-coated carbon aerogel

    DOE Patents [OSTI]

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  14. Method of producing novel silicon carbide articles. [Patent application

    DOE Patents [OSTI]

    Milewski, J.V.

    1982-06-18

    A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

  15. In situ electrochemical dilatometry of carbide-derived carbons

    SciTech Connect (OSTI)

    Hantel, M M; Presser, Volker; Gogotsi, Yury

    2011-01-01

    The long life durability and extraordinary stability of supercapacitors are ascribed to the common concept that the charge storage is purely based on double-layer charging. Therefore the ideal supercapacitor electrode should be free of charge induced microscopic structural changes. However, recent in-situ investigations on different carbon materials for supercapacitor electrodes have shown that the charge and discharge is accompanied by dimensional changes of the electrode up to several percent. This work studies the influence of the pore size on the expansion behavior of carbon electrodes derived from titanium carbide-derived carbons with an average pore size between 5 and 8 Using tetraethylammonium tetrafluoroborate in acetonitrile, the swelling of the electrodes was measured by in situ dilatometry. The experiments revealed an increased expansion on the negatively charged electrode for pores below 6 , which could be described with pore swelling.

  16. Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

    SciTech Connect (OSTI)

    Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

    2012-08-01

    Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The Advanced Measurements work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of in-service degradation. Examples include composite density, distribution of porosity, fiber-matrix bond character, uniformity of weave, physical damage, and joint quality at interface bonds.

  17. Reaction-Forming Method for Producing Near Net-Shape Refractory Metal Carbides

    DOE Patents [OSTI]

    Palmisiano, Marc N.; Jakubenas, Kevin J.; Baranwal, Rita

    2004-07-20

    A method for reaction forming refractory metal carbides. The method involves the fabrication of a glassy carbon preform by casting an organic, resin-based liquid mixture into a mold and subsequently heat treating it in two steps, which cures and pyrolizes the resin resulting in a porous carbon preform. By varying the amounts of the constituents in the organic, resin-based liquid mixture, control over the density of the carbon preform is obtained. Control of the density and microstructure of the carbon preform allows for determination of the microstructure and properties of the refractory metal carbide material produced. The glassy carbon preform is placed on a bed of refractory metal or refractory metal--silicon alloy. The pieces are heated above the melting point of the metal or alloy. The molten metal wicks inside the porous carbon preform and reacts, forming the refractory metal carbide or refractory metal carbide plus a minor secondary phase.

  18. Bipolaron Hopping Conduction in Boron Carbides (Journal Article) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Bipolaron Hopping Conduction in Boron Carbides Citation Details In-Document Search Title: Bipolaron Hopping Conduction in Boron Carbides × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy of this document is also available for

  19. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits Synthesis, Characterization, and Application of Nanostructured Diamond/ Silicon Carbide Composites for Improved Drill Bit Performance Industrial drilling, mining, cutting, and grinding make heavy use of superhard materials with superior wear resistance. In the oil and gas drilling industry, the use of polycrystalline diamond compact (PDC) drill bits has become increasingly common, with PDC drill

  20. Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012)

    Office of Environmental Management (EM)

    Silicon Carbide Technology Breakthrough Silicon carbide (SiC) is a semiconductor material under rapid development for use in power electronic (PE) systems due to its unique material and electronic properties. SiC potentially offers several advantages over conventional silicon (Si) for use in PE devices. Comparatively, individual SiC devices (in theory) can endure temperatures up to 600°C (standard Si PE devices are typically limited to 150°C), withstand more voltage, tolerate a larger current

  1. DOE - Office of Legacy Management -- Union Carbide and Carbon Co - TN 10

    Office of Legacy Management (LM)

    Carbide and Carbon Co - TN 10 FUSRAP Considered Sites Site: Union Carbide and Carbon Co (TN.10) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: This site is one of a group of 5 FUSRAP considered sites for which records are available that provide a reasonably complete historical account of their operations and relationship, if any, with MED/AEC

  2. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  3. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect (OSTI)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  4. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    DOE Patents [OSTI]

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  5. Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

    DOE Patents [OSTI]

    Halverson, Danny C. (Manteca, CA); Landingham, Richard L. (Livermore, CA)

    1988-01-01

    A chemical pretreatment method is used to produce boron carbide-, boron-, and boride-reactive metal composites by an infiltration process. The boron carbide or other starting constituents, in powder form, are immersed in various alcohols, or other chemical agents, to change the surface chemistry of the starting constituents. The chemically treated starting constituents are consolidated into a porous ceramic precursor which is then infiltrated by molten aluminum or other metal by heating to wetting conditions. Chemical treatment of the starting constituents allows infiltration to full density. The infiltrated precursor is further heat treated to produce a tailorable microstructure. The process at low cost produces composites with improved characteristics, including increased toughness, strength.

  6. Nucor`s start up of the world`s first commercial iron carbide plant

    SciTech Connect (OSTI)

    Garraway, R.

    1996-12-31

    Nucor began startup of its 900 Tonnes/day Fe{sub 3}C plant in July 1994 and the process has produced a high quality iron carbide. The major process variables and their importance to achieving design capacity are discussed, along with results of tests using the carbide to supplement scrap metal at Nucor Steel Mills. With the potential to burn the Carbon in the Fe{sub 3}C to CO and CO{sub 2}, the conversion of pure Fe{sub 3}C to 1 Tonne of steel will require: 55% of what is required using 100% scrap and 40% of what is required using 100% DRI.

  7. Method of deposition of silicon carbide layers on substrates and product

    DOE Patents [OSTI]

    Angelini, Peter; DeVore, Charles E.; Lackey, Walter J.; Blanco, Raymond E.; Stinton, David P.

    1984-01-01

    A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment.

  8. Carbide-derived carbons - From porous networks to nanotubes and graphene

    SciTech Connect (OSTI)

    Presser, V.; Heon, M.; Gogotsi, Y.

    2011-02-09

    Carbide-derived carbons (CDCs) are a large family of carbon materials derived from carbide precursors that are transformed into pure carbon via physical (e.g., thermal decomposition) or chemical (e.g., halogenation) processes. Structurally, CDC ranges from amorphous carbon to graphite, carbon nanotubes or graphene. For halogenated carbides, a high level of control over the resulting amorphous porous carbon structure is possible by changing the synthesis conditions and carbide precursor. The large number of resulting carbon structures and their tunability enables a wide range of applications, from tribological coatings for ceramics, or selective sorbents, to gas and electrical energy storage. In particular, the application of CDC in supercapacitors has recently attracted much attention. This review paper summarizes key aspects of CDC synthesis, properties, and applications. It is shown that the CDC structure and properties are sensitive to changes of the synthesis parameters. Understanding of processingstructureproperties relationships facilitates tuning of the carbon material to the requirements of a certain application.

  9. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect (OSTI)

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions range, i.e. using steady-state sputtering. The recession of both the uraniums and uranium carbides surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U??Ga??, (UC)??Ga?? and U??Cs?, (UC)??Cs??, respectively.

  10. Characterization of transition carbides in quench and partitioned steel microstructures by Mössbauer spectroscopy and complementary techniques

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pierce, D. T.; Coughlin, D. R.; Williamson, D. L.; Clarke, K. D.; Clarke, A. J.; Speer, J. G.; De Moor, E.

    2015-05-01

    Quenching and partitioning (Q&P) produces steel microstructures with martensite and austenite that exhibit promising property combinations for third generation advanced high strength steels. Understanding the kinetics of reactions that compete for available carbon, such as carbide formation, is critical for alloying and processing design and achieving austenite enrichment and retention during Q&P. Mössbauer effect spectroscopy (MES) was used to characterize Q&P microstructures in a 0.38C-1.54Mn-1.48Si wt.% steel after quenching to 225 °C and partitioning at 400 °C for 10 or 300 s, with an emphasis on transition carbides. The recoilless fraction for η-carbide was calculated and a correction for saturationmore » of the MES absorption spectrum was applied, making quantitative measurements of small amounts of η-carbide, including non-stoichiometric η-carbide, possible in Q&P microstructures. Complementary transmission electron microscopy confirmed the presence of η-carbides, and MES and X-ray diffraction were used to characterize the austenite. The amount of η-carbide formed during Q&P ranged from 1.4 to 2.4 at.%, accounting for a substantial portion (~24% to 41%) of the bulk carbon content of the steel. The amount (5.0 at.%) of η-carbide that formed after quenching and tempering (Q&T) at 400 °C for 300 s was significantly greater than after partitioning at 400 °C for 300 s (2.4 at.%), suggesting that carbon partitioning from martensite to austenite occurs in conjunction with η-carbide formation during Q&P in these specimens.« less

  11. Characterization of transition carbides in quench and partitioned steel microstructures by Mössbauer spectroscopy and complementary techniques

    SciTech Connect (OSTI)

    Pierce, D. T.; Coughlin, D. R.; Williamson, D. L.; Clarke, K. D.; Clarke, A. J.; Speer, J. G.; De Moor, E.

    2015-05-01

    Quenching and partitioning (Q&P) produces steel microstructures with martensite and austenite that exhibit promising property combinations for third generation advanced high strength steels. Understanding the kinetics of reactions that compete for available carbon, such as carbide formation, is critical for alloying and processing design and achieving austenite enrichment and retention during Q&P. Mössbauer effect spectroscopy (MES) was used to characterize Q&P microstructures in a 0.38C-1.54Mn-1.48Si wt.% steel after quenching to 225 °C and partitioning at 400 °C for 10 or 300 s, with an emphasis on transition carbides. The recoilless fraction for η-carbide was calculated and a correction for saturation of the MES absorption spectrum was applied, making quantitative measurements of small amounts of η-carbide, including non-stoichiometric η-carbide, possible in Q&P microstructures. Complementary transmission electron microscopy confirmed the presence of η-carbides, and MES and X-ray diffraction were used to characterize the austenite. The amount of η-carbide formed during Q&P ranged from 1.4 to 2.4 at.%, accounting for a substantial portion (~24% to 41%) of the bulk carbon content of the steel. The amount (5.0 at.%) of η-carbide that formed after quenching and tempering (Q&T) at 400 °C for 300 s was significantly greater than after partitioning at 400 °C for 300 s (2.4 at.%), suggesting that carbon partitioning from martensite to austenite occurs in conjunction with η-carbide formation during Q&P in these specimens.

  12. Carbide Coatings for Nickel Alloys, Graphite and Carbon/Carbon Composites to be used in Fluoride Salt Valves

    SciTech Connect (OSTI)

    Nagle, Denis; Zhang, Dajie

    2015-10-22

    The focus of this research was concerned with developing materials technology that supports the evolution of Generation IV Advanced High Temperature Reactor (AHTR) concepts. Specifically, we investigate refractory carbide coatings for 1) nickel alloys, and 2) commercial carbon-carbon composites (CCCs). Numerous compelling reasons have driven us to focus on carbon and carbide materials. First, unlike metals, the strength and modulus of CCCs increase with rising temperature. Secondly, graphite and carbon composites have been proven effective for resisting highly corrosive fluoride melts such as molten cryolite [Na?AlF?] at ~1000C in aluminum reduction cells. Thirdly, graphite and carbide materials exhibit extraordinary radiation damage tolerance and stability up to 2000C. Finally, carbides are thermodynamically more stable in liquid fluoride salt than the corresponding metals (i.e. Cr and Zr) found in nickel based alloys.

  13. Elastic properties of B-C-N films grown by N{sub 2}-reactive sputtering from boron carbide targets

    SciTech Connect (OSTI)

    Salas, E.; Jimnez Riobo, R. J.; Jimnez-Villacorta, F.; Prieto, C.; Snchez-Marcos, J.; Dept. Qumica-Fsica Aplicada, Universidad Autnoma de Madrid, Cantoblanco, 28049 Madrid ; Muoz-Martn, A.; Prieto, J. E.; Joco, V.

    2013-12-07

    Boron-carbon-nitrogen films were grown by RF reactive sputtering from a B{sub 4}C target and N{sub 2} as reactive gas. The films present phase segregation and are mechanically softer than boron carbide films (a factor of more than 2 in Young's modulus). This fact can turn out as an advantage in order to select buffer layers to better anchor boron carbide films on substrates eliminating thermally induced mechanical tensions.

  14. Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

    SciTech Connect (OSTI)

    Brodyn, M. S.; Volkov, V. I. Lyakhovetskii, V. R.; Rudenko, V. I.; Puzilkov, V. M.; Semenov, A. V.

    2012-02-15

    The aim of this study is to investigate the nonlinearity of refraction in nanostructured silicon carbide films depending on their structural features (synthesis conditions for such films, substrate temperature during their deposition, concentration of the crystalline phase in the film, Si/C ratio of atomic concentrations in the film, and size of SiC nanocrystals formed in the film). The corresponding dependences are obtained, as well as the values of nonlinear-optical third-order susceptibility {chi}{sup (3)}({omega}; {omega}, -{omega}, {omega}) for various silicon polytypes (3C, 21R, and 27R) which exceed the value of {chi}{sup (3)} in bulk silicon carbide single crystals by four orders of magnitude.

  15. Status of steady-state irradiation testing of mixed-carbide fuel designs. [LMFBR

    SciTech Connect (OSTI)

    Harry, G.R.

    1983-01-01

    The steady-state irradiation program of mixed-carbide fuels has demonstrated clearly the ability of carbide fuel pins to attain peak burnup greater than 12 at.% and peak fluences of 1.4 x 10/sup 23/ n/cm/sup 2/ (E > 0.1 MeV). Helium-bonded fuel pins in 316SS cladding have achieved peak burnups of 20.7 at.% (192 MWd/kg), and no breaches have occurred in pins of this design. Sodium-bonded fuel pins in 316SS cladding have achieved peak burnups of 15.8 at.% (146 MWd/kg). Breaches have occurred in helium-bonded fuel pins in PE-16 cladding (approx. 5 at.% burnup) and in D21 cladding (approx. 4 at.% burnup). Sodium-bonded fuel pins achieved burnups over 11 at.% in PE-16 cladding and over 6 at.% in D9 and D21 cladding.

  16. Method of synthesizing bulk transition metal carbide, nitride and phosphide catalysts

    DOE Patents [OSTI]

    Choi, Jae Soon; Armstrong, Beth L; Schwartz, Viviane

    2015-04-21

    A method for synthesizing catalyst beads of bulk transmission metal carbides, nitrides and phosphides is provided. The method includes providing an aqueous suspension of transition metal oxide particles in a gel forming base, dropping the suspension into an aqueous solution to form a gel bead matrix, heating the bead to remove the binder, and carburizing, nitriding or phosphiding the bead to form a transition metal carbide, nitride, or phosphide catalyst bead. The method can be tuned for control of porosity, mechanical strength, and dopant content of the beads. The produced catalyst beads are catalytically active, mechanically robust, and suitable for packed-bed reactor applications. The produced catalyst beads are suitable for biomass conversion, petrochemistry, petroleum refining, electrocatalysis, and other applications.

  17. Process of making titanium carbide (TiC) nano-fibrous felts

    DOE Patents [OSTI]

    Fong, Hao; Zhang, Lifeng; Zhao, Yong; Zhu, Zhengtao

    2015-01-13

    A method of synthesizing mechanically resilient titanium carbide (TiC) nanofibrous felts comprising continuous nanofibers or nano-ribbons with TiC crystallites embedded in carbon matrix, comprising: (a) electrospinning a spin dope for making precursor nanofibers with diameters less than 0.5 J.Lm; (b) overlaying the nanofibers to produce a nanofibrous mat (felt); and then (c) heating the nano-felts first at a low temperature, and then at a high temperature for making electrospun continuous nanofibers or nano-ribbons with TiC crystallites embedded in carbon matrix; and (d) chlorinating the above electrospun nano-felts at an elevated temperature to remove titanium for producing carbide derived carbon (CDC) nano-fibrous felt with high specific surface areas.

  18. Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

    SciTech Connect (OSTI)

    Koyanagi, Takaaki; Shimoda, Kazuya; Kondo, Sosuke; Hinoki, Tatsuya; Ozawa, Kazumi; Katoh, Yutai

    2014-12-01

    The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. Microstructural observation and data analysis were performed.

  19. Solubility of niobium carbide and niobium carbonitride in alloyed austenite and ferrite

    SciTech Connect (OSTI)

    Sharma, R.C.; Kirkaldy, J.S.; Lakshmanan, V.K.

    1984-03-01

    The available data on the solubility of niobium carbide and niobium carbonitride in plain carbon and alloyed austenite has been analyzed via dilute solution thermodynamics with a view to establishing a consistent set of interaction parameters for predicting austenite + niobium carbonitride equilibria. The computation algorithm includes the prediction of phase mass fractions as a function of alloy composition and temperature between 900/sup 0/ and 1300/sup 0/C (tie lines). Analogous ferrite equilibri are included.

  20. I' I OAK RIDGE NATIONAL LABORATORY OPERATED B Y UNION CARBIDE CORPORATION

    Office of Legacy Management (LM)

    / I' I OAK RIDGE NATIONAL LABORATORY OPERATED B Y UNION CARBIDE CORPORATION NUCLEAR DIVISION POST OFFICE BOK X OAK RIDGE, TENNESSEE 37830 August 21, 1979 Department of Energy, Oak Ridge Operations Attention: E. L. Keller, Director for Technical Services Division Post Office Box E Oak Ridge, Tennessee 37830 Gentlemen: Formerly Utilized Site-Remedial Action Program - Post Decontamination Radiological Survey of a portion of the Former Kellex Laboratory Site, Jersey City, New Jersey Decontamination

  1. OAK RIDGE NATIONAL LABORATORY OPER*TEO BY UNION CARBIDE CORPORATION

    Office of Legacy Management (LM)

    ~$ ., . .Y.' ~. : ' : ,,, OAK RIDGE NATIONAL LABORATORY OPER*TEO BY UNION CARBIDE CORPORATION NUCLEAR DIVISION ' . ' : .m POST OFFICE BOX X OAK RIDGE, TENNESSEE ,X,0 ,. June 20, 1980 .~ ,, M r. Arthur J. 'Whitman Environmental and Safety 'Engineering Division U.S. Department of Energy ,) Washington, Oit. 20545 ., Dear Art: Soil Sample Analysis, City of Woburn Landfill, Woburn, Massachusetts ,,During a.radiological survey of the old.and new city of Woburn landfills (i-e: trip report.to Woburn,

  2. Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-02-19

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  3. Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  4. The All Boron Carbide Diode Neutron Detector: Experiment and Modeling Approach

    SciTech Connect (OSTI)

    Sabirianov, Ildar F.; Brand, Jennifer I. |; Fairchild, Robert W.

    2008-07-01

    Boron carbide diode detectors, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theoretical expectations. The performance of the all boron carbide neutron detector differs, as expected, from devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector). Diodes were fabricated from natural abundance boron (20% {sup 10}B and 80% {sup 11}B.) directly on the metal substrates and metal contacts applied to the films as grown. The total boron depth was on the order of 2 microns. This is clearly not a conversion-layer configuration. The diodes were exposed to thermal neutrons generated from a paraffin moderated plutonium-beryllium source in moderated and un-moderated, as well as shielded and unshielded experimental configurations, where the expected energy peaks at at 2.31 MeV and 2.8 MeV were clearly observed, albeit with some incomplete charge collection typical of thinner diode structures. The results are compared with other boron based thin film detectors and literature models. (authors)

  5. Evaluation of Codisposal Viability for TH/U Carbide (Fort Saint Vrain HTGR) DOE-Owned Fuel

    SciTech Connect (OSTI)

    H. radulescu

    2001-09-28

    There are more than 250 forms of US Department of Energy (DOE)-owned spent nuclear fuel (SNF). Due to the variety of the spent nuclear fuel, the National Spent Nuclear Fuel Program has designated nine representative fuel groups for disposal criticality analyses based on fuel matrix, primary fissile isotope, and enrichment. The Fort Saint Vrain reactor (FSVR) SNF has been designated as the representative fuel for the Th/U carbide fuel group. The FSVR SNF consists of small particles (spheres of the order of 0.5-mm diameter) of thorium carbide or thorium and high-enriched uranium carbide mixture, coated with multiple, thin layers of pyrolytic carbon and silicon carbide, which serve as miniature pressure vessels to contain fission products and the U/Th carbide matrix. The coated particles are bound in a carbonized matrix, which forms fuel rods or ''compacts'' that are loaded into large hexagonal graphite prisms. The graphite prisms (or blocks) are the physical forms that are handled in reactor loading and unloading operations, and which will be loaded into the DOE standardized SNF canisters. The results of the analyses performed will be used to develop waste acceptance criteria. The items that are important to criticality control are identified based on the analysis needs and result sensitivities. Prior to acceptance to fuel from the Th/U carbide fuel group for disposal, the important items for the fuel types that are being considered for disposal under the Th/U carbide fuel group must be demonstrated to satisfy the conditions determined in this report.

  6. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    SciTech Connect (OSTI)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  7. Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

    SciTech Connect (OSTI)

    Wang, Lumin; Wierschke, Jonathan Brett

    2015-04-08

    The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised of boron trioxide and sassolite (H3BO3). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.

  8. In Situ Synthesis of Uranium Carbide and its High Temperature Cubic Phase

    SciTech Connect (OSTI)

    Reiche, Helmut Matthias; Vogel, Sven C.

    2015-03-25

    New in situ data for the U-C system are presented, with the goal of improving knowledge of the phase diagram to enable production of new ceramic fuels. The none quenchable, cubic, ?-phase, which in turn is fundamental to computational methods, was identified. Rich datasets of the formation synthesis of uranium carbide yield kinetics data which allow the benchmarking of modeling, thermodynamic parameters etc. The order-disorder transition (carbon sublattice melting) was observed due to equal sensitivity of neutrons to both elements. This dynamic has not been accurately described in some recent simulation-based publications.

  9. A visible light-sensitive tungsten carbide/tungsten trioxde composite photocatalyst

    SciTech Connect (OSTI)

    Kim, Young-ho; Irie, Hiroshi; Hashimoto, Kazuhito

    2008-05-05

    A photocatalyst composed of tungsten carbide (WC) and tungsten oxide (WO{sub 3}) has been prepared by the mechanical mixing of each powder. Its photocatalytic activity was evaluated by the gaseous isopropyl alcohol decomposition process. The photocatalyst showed high visible light photocatalytic activity with a quantum efficiency of 3.2% for 400-530 nm light. The photocatalytic mechanism was explained by means of enhanced oxygen reduction reaction due to WC, which may serve as a multielectron reduction catalyst, as well as the photogeneration of holes in the valence band of WO{sub 3}.

  10. Adhesion of diamond coatings synthesized by oxygen-acetylene flame CVD on tungsten carbide

    SciTech Connect (OSTI)

    Marinkovic, S.; Stankovic, S.; Dekanski, A.

    1995-12-31

    The results of a study concerned with chemical vapor deposition of diamond on tungsten carbide cutting tools using an oxygen-acetylene flame in a normal ambient environment are presented. Effects of preparation conditions on the adhesion of the coating have been investigated, including different surface treatment, different position of the flame with respect to the coated surface, effect of an intermediate poorly crystalline diamond layer, etc. In particular, effect of polishing and ultrasonic lapping with diamond powder was compared with that of a corresponding treatment with SiC powder.

  11. Process for the production of hydrogen and carbonyl sulfide from hydrogen sulfide and carbon monoxide using a metal boride, nitride, carbide and/or silicide catalyst

    SciTech Connect (OSTI)

    McGuiggan, M.F.; Kuch, P.L.

    1984-05-08

    Hydrogen and carbonyl sulfide are produced by a process comprising contacting gaseous hydrogen sulfide with gaseous carbon monoxide in the presence of a metal boride, carbide, nitride and/or silicide catalyst, such as titanium carbide, vanadium boride, manganese nitride or molybdenum silicide.

  12. Kinetics of laser-pulse vaporization of uranium carbide by mass spectrometry. [LMFBR

    SciTech Connect (OSTI)

    Tehranian, F.

    1983-06-01

    The kinetics of uranium carbide vaporization in the temperature range 3000 K to 5200 K was studied using a Nd-glass laser with peak power densities from 1.6 x 10/sup 5/ to 4.0 x 10/sup 5/ watts/cm/sup 2/. The vapor species U, UC/sub 2/, C/sub 1/ and C/sub 3/ were detected and analyzed by a quadrupole mass spectrometer. From the mass spectrometer signals number densities of the various species in the ionizer were obtained as functions of time. The surface of the irradiated uranium carbide was examined by scanning electron microscope and the depth profile of the crater was obtained. In order to aid analysis of the data, the heat conduction and species diffusion equations for the solid (or liquid) were solved numerically by a computer code to obtain the temperature and composition transients during laser heating. A sensitivity analysis was used to study the effect of uncertainties in the input parameters on the computed surface temperatures.

  13. Method for preparing configured silicon carbide whisker-reinforced alumina ceramic articles

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN)

    1987-01-01

    A ceramic article of alumina reinforced with silicon carbide whiskers suitable for the fabrication into articles of complex geometry are provided by pressureless sintering and hot isostatic pressing steps. In accordance with the method of the invention a mixture of 5 to 10 vol. % silicon carbide whiskers 0.5 to 5 wt. % of a sintering aid such as yttria and the balance alumina powders is ball-milled and pressureless sintered in the desired configuration in the desired configuration an inert atmosphere at a temperature of about 1800.degree. C. to provide a self-supporting configured composite of a density of at least about 94% theoretical density. The composite is then hot isostatically pressed at a temperature and pressure adequate to provide configured articles of at least about 98% of theoretical density which is sufficient to provide the article with sufficient strength and fracture toughness for use in most structural applications such as gas turbine blades, cylinders, and other components of advanced heat engines.

  14. Irradiation-induced effects of proton irradiation on zirconium carbides with different stoichiometries

    SciTech Connect (OSTI)

    Y. Huang; B.R. Maier; T.R. Allen

    2014-10-01

    Zirconium carbide (ZrC) is being considered for utilization in deep burn TRISO fuel particles for hightemperature, gas-cooled reactors. Zirconium carbide has a cubic B1 type crystal structure along with a very high melting point (3420 ?C), exceptional hardness and good thermal and electrical conductivities. Understanding the ZrC irradiation response is crucial for establishing ZrC as an alternative component in TRISO fuel. Until now, very few studies on irradiation effects on ZrC have been released and fundamental aspects of defect evolution and kinetics are not well understood although some atomistic simulations and phenomenological studies have been performed. This work was carried out to understand the damage evolution in float-zone refined ZrC with different stoichiometries. Proton irradiations at 800 ?C up to doses of 3 dpa were performed on ZrCx (where x ranges from 0.9 to 1.2) to investigate the damage evolution. The irradiation-induced defects, such as density of dislocation loops, at different stoichiometries and doses which were characterized by transmission electron microscopy (TEM) is presented and discussed.

  15. Method for fracturing silicon-carbide coatings on nuclear-fuel particles

    DOE Patents [OSTI]

    Turner, Lloyd J. (Oak Ridge, TN); Willey, Melvin G. (Knoxville, TN); Tiegs, Sue M. (Lenoir City, TN); Van Cleve, Jr., John E. (Kingston, TN)

    1982-01-01

    This invention is a device for fracturing particles. It is designed especially for use in "hot cells" designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel material, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

  16. Very low Schottky barrier height at carbon nanotube and silicon carbide interface

    SciTech Connect (OSTI)

    Inaba, Masafumi Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu; Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko; Hiraiwa, Atsushi; Kawarada, Hiroshi

    2015-03-23

    Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3??10{sup 18?}cm{sup ?3} was estimated to be ?1.3??10{sup ?4} ??cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.400.45?eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

  17. Fort Saint Vrain HTGR (Th/U carbide) Fuel Characteristics for Disposal Criticality Analysis

    SciTech Connect (OSTI)

    Taylor, Larry Lorin

    2001-01-01

    DOE-owned spent nuclear fuels encompass many fuel types. In an effort to facilitate criticality analysis for these various fuel types, they were categorized into eight characteristic fuel groups with emphasis on fuel matrix composition. Out of each fuel group, a representative fuel type was chosen for analysis as a bounding case within that fuel group. Generally, burnup data, fissile enrichments and total fuel mass govern the selection of the representative or candidate fuel within that group. For the HTGR group, the Fort Saint Vrain (FSV) reactor fuel has been chosen for the evaluation of viability for waste co-disposal. The FSV reactor was operated by Public Service of Colorado as a licensed power reactor. The FSV fuel employs a U/Th carbide matrix in individually pyrolytic carbon-coated particles. These individual particles are in turn coated with silicon carbide (SiC) and contained within fuel compacts, that are in turn embedded in graphite blocks that comprised the structural core of the reactor.

  18. Solid-state graphene formation via a nickel carbide intermediate phase [Nickel carbide (Ni3C) as an intermediate phase for graphene formation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiong, W; Zhou, Yunshen; Hou, Wenjia; Guillemet, Thomas; Silvain, Jean-François; Lahaye, Michel; Lebraud, Eric; Xu, Shen; Wang, Xinwei; Cullen, David A; et al

    2015-11-10

    Direct formation of graphene with controlled number of graphitic layers on dielectric surfaces is highly desired for practical applications. Despite significant progress achieved in understanding the formation of graphene on metallic surfaces through chemical vapor deposition (CVD) of hydrocarbons, very limited research is available elucidating the graphene formation process via rapid thermal processing (RTP) of solid-state amorphous carbon, through which graphene is formed directly on dielectric surfaces accompanied by autonomous nickel evaporation. It is suggested that a metastable hexagonal nickel carbide (Ni3C) intermediate phase plays a critical role in transforming amorphous carbon to 2D crystalline graphene and contributing to themore » autonomous Ni evaporation. Temperature resolved carbon and nickel evolution in the RTP process is investigated using Auger electron spectroscopic (AES) depth profiling and glancing-angle X-ray diffraction (GAXRD). Formation, migration and decomposition of the hexagonal Ni3C are confirmed to be responsible for the formation of graphene and the evaporation of Ni at 1100 °C. The Ni3C-assisted graphene formation mechanism expands the understanding of Ni-catalyzed graphene formation, and provides insightful guidance for controlled growth of graphene through the solid-state transformation process.« less

  19. .beta.-silicon carbide protective coating and method for fabricating same

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA)

    1994-01-01

    A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

  20. Diorganosilacetylene-alt-diorganosilvinylene polymers and a process densifying porous silicon-carbide bodies

    DOE Patents [OSTI]

    Barton, Thomas J.; Ijadi-Maghsoodi, Sina; Pang, Yi

    1994-05-17

    The present invention provides linear organosilicon polymers including acetylene and vinylene moieties, and a process for their preparation. These diorganosilacetylene-alt-diorganosilvinylene linear polymers can be represented by the formula: --[--(R.sup.1)(R.sup.2)Si--C.tbd.C--(R.sup.3)(R.sup.4)Si--CH=CH--].sub.n-- , wherein n.gtoreq.2; and each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 is independently selected from the group consisting of hydrogen, halogen, alkyl, alkenyl, aryl, and aralkyl radicals. The polymers are soluble in organic solvents, air stable, and can be pulled into fibers or cast into films. They can be thermally converted into silicon carbide ceramic materials.

  1. Diorganosilacetylene-alt-diorganosilvinylene polymers and a process densifying porous silicon-carbide bodies

    DOE Patents [OSTI]

    Barton, T.J.; Ijadi-Maghsoodi, S.; Pang, Y.

    1994-05-17

    The present invention provides linear organosilicon polymers including acetylene and vinylene moieties, and a process for their preparation. These diorganosilacetylene-alt-diorganosilvinylene linear polymers can be represented by the formula: --[--(R[sup 1])(R[sup 2])Si--C[triple bond]C-(R[sup 3])(R[sup 4])Si--CH[double bond]CH--][sub n]--, wherein n[>=]2; and each R[sup 1], R[sup 2], R[sup 3], and R[sup 4] is independently selected from the group consisting of hydrogen, halogen, alkyl, alkenyl, aryl, and aralkyl radicals. The polymers are soluble in organic solvents, air stable, and can be pulled into fibers or cast into films. They can be thermally converted into silicon carbide ceramic materials.

  2. Method for production of ceramic oxide and carbide bodies by polymer inclusion and decomposition

    DOE Patents [OSTI]

    Quinby, Thomas C. (Kingston, TN)

    1985-01-01

    A method for the preparation of thin, free-standing metal oxide films which are useful as nuclear accelerator target materials. Cations of any metal except those of Group IA and precious metals, such as, U, Zr, Nd, Ce, Th, pr or Cr, are absorbed on a thin film of polymeric material, such as, carboxymethylcellulose, viscose rayon or cellophane. The cation impregnated polymeric material is dried. Then the impregnated film is heated in an inert atmosphere to form a carbonized membrane. The carbonized membrane is oxidized to yield a thin, self-supporting, metal oxide membrane. Or, the membrane can be heated in an inert atmosphere to yield a thin, self-supporting, metal carbide-containing membrane.

  3. Method for production of ceramic oxide and carbide bodies by polymer inclusion and decomposition

    DOE Patents [OSTI]

    Quinby, T.C.

    1984-08-30

    A method for the preparation of thin, free-standing metal oxide films which are useful as nuclear accelerator target materials is described. Cations of any metal except those of Group IA and precious metals, such as, U, Zr, Nd, Ce, Th, Pr or Cr, are absorbed on a thin film of polymeric material, such as carboxymethylcellulose, viscose rayon or cellophane. The cation impregnated polymeric material is dried. Then the impregnated film is heated in an inert atmosphere to form a carbonized membrane. The carbonized membrane is oxidized to yield a thin, self-supporting, metal oxide membrane. Or, the membrane can be heated in an inert atmosphere to yield a thin, self-supporting, metal carbide-containing membrane.

  4. [beta]-silicon carbide protective coating and method for fabricating same

    DOE Patents [OSTI]

    Carey, P.G.; Thompson, J.B.

    1994-11-01

    A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

  5. Ionization-induced annealing of pre-existing defects in silicon carbide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H; Chisholm, Matthew F; Liu, Peng; Xue, Haizhou; Weber, William J

    2015-01-01

    A long-standing objective in materials research is to find innovative ways to remove preexisting damage and heal fabrication defects or environmentally induced defects in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power, high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization processes results in a highly localized thermal spike that can effectively heal preexisting defects and restore the structural order. This work revealsmorean innovative self-healing process using highly ionizing ions, and it describes a critical aspect to be considered in modeling SiC performance as either a functional or a structural material for device applications or high-radiation environments.less

  6. Near-field radiative heat transfer between metamaterials coated with silicon carbide thin films

    SciTech Connect (OSTI)

    Basu, Soumyadipta Yang, Yue; Wang, Liping

    2015-01-19

    In this letter, we study the near-field radiative heat transfer between two metamaterial substrates coated with silicon carbide (SiC) thin films. It is known that metamaterials can enhance the near-field heat transfer over ordinary materials due to excitation of magnetic plasmons associated with s polarization, while strong surface phonon polariton exists for SiC. By careful tuning of the optical properties of metamaterial, it is possible to excite electrical and magnetic resonances for the metamaterial and surface phonon polaritons for SiC at different spectral regions, resulting in the enhanced heat transfer. The effect of the SiC film thickness at different vacuum gaps is investigated. Results obtained from this study will be beneficial for application of thin film coatings for energy harvesting.

  7. Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

    SciTech Connect (OSTI)

    Muzha, A.; Fuchs, F.; Simin, D.; Astakhov, G. V.; Tarakina, N. V.; Trupke, M.; Soltamov, V. A.; Mokhov, E. N.; Baranov, P. G.; Dyakonov, V.; and others

    2014-12-15

    Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600?nm down to 60?nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical, and biological processes.

  8. Quantum Chemistry, and Eclectic Mix: From Silicon Carbide to Size Consistency

    SciTech Connect (OSTI)

    Jamie Marie Rintelman

    2004-12-19

    Chemistry is a field of great breadth and variety. It is this diversity that makes for both an interesting and challenging field. My interests have spanned three major areas of theoretical chemistry: applications, method development, and method evaluation. The topics presented in this thesis are as follows: (1) a multi-reference study of the geometries and relative energies of four atom silicon carbide clusters in the gas phase; (2) the reaction of acetylene on the Si(100)-(2x1) surface; (3) an improvement to the Effective Fragment Potential (EFP) solvent model to enable the study of reactions in both aqueous and nonaqueous solution; and (4) an evaluation of the size consistency of Multireference Perturbation Theory (MRPT). In the following section, the author briefly discusses two topics central to, and present throughout, this thesis: Multi-reference methods and Quantum Mechanics/Molecular Mechanics (QM/MM) methods.

  9. Effect of the pre-existing carbides on the grain boundary network during grain boundary engineering in a nickel based alloy

    SciTech Connect (OSTI)

    Liu, Tingguang; Xia, Shuang; Li, Hui; Zhou, Bangxin; Bai, Qin

    2014-05-01

    Grain boundary engineering was carried out on an aging-treated nickel based Alloy 690, which has precipitated carbides at grain boundaries. Electron backscatter diffraction technique was used to investigate the grain boundary networks. Results show that, compared with the solution-annealed samples, the aging-treated samples with pre-existing carbides at grain boundaries need longer duration or higher temperature during annealing after low-strain tensile deformation for forming high proportion of low-? coincidence site lattice grain boundaries (more than 75%). The reason is that the primary recrystallization is inhibited or retarded owing to that the pre-existing carbides are barriers to grain boundaries migration. - Highlights: Study of GBE as function of pre-existing GB carbides, tensile strain and annealing Recrystallization of GBE is inhibited or retarded by the pre-existing carbides. Retained carbides after annealing show the original GB positions. More than 80% of special GBs were formed after the modification of GBE processing. Multiple twinning during recrystallization is the key process of GBE.

  10. Nanostructured Metal Carbides for Aprotic Li-O2 Batteries. New Insights into Interfacial Reactions and Cathode Stability

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kundu, Dipan; Black, Robert; Adams, Brian; Harrison, Katharine; Zavadil, Kevin R.; Nazar, Linda F.

    2015-05-01

    The development of nonaqueous Li–oxygen batteries, which relies on the reversible reaction of Li + O2 to give lithium peroxide (Li2O2), is challenged by several factors, not the least being the high charging voltage that results when carbon is typically employed as the cathode host. We report here on the remarkably low 3.2 V potential for Li2O2 oxidation on a passivated nanostructured metallic carbide (Mo2C), carbon-free cathode host. Furthermore, online mass spectrometry coupled with X-ray photoelectron spectroscopy unequivocally demonstrates that lithium peroxide is simultaneously oxidized together with the LixMoO3-passivated conductive interface formed on the carbide, owing to their close redoxmore » potentials. We found that the process rejuvenates the surface on each cycle upon electrochemical charge by releasing LixMoO3 into the electrolyte, explaining the low charging potential.« less

  11. Experimental and computational investigation of acetic acid deoxygenation over oxophilic molybdenum carbide: Surface chemistry and active site identity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schaidle, Joshua A.; Blackburn, Jeffrey; Farberow, Carrie A.; Nash, Connor; Steirer, K. Xerxes; Clark, Jared; Robichaud, David J.; Ruddy, Daniel A.

    2016-01-21

    Ex situ catalytic fast pyrolysis (CFP) is a promising route for producing fungible biofuels; however, this process requires bifunctional catalysts that favor C–O bond cleavage, activate hydrogen at near atmospheric pressure and high temperature (350–500 °C), and are stable under high-steam, low hydrogen-to-carbon environments. Recently, early transition-metal carbides have been reported to selectively cleave C–O bonds of alcohols, aldehydes, and oxygenated aromatics, yet there is limited understanding of the metal carbide surface chemistry under reaction conditions and the identity of the active sites for deoxygenation. In this study, we evaluated molybdenum carbide (Mo2C) for the deoxygenation of acetic acid, anmore » abundant component of biomass pyrolysis vapors, under ex situ CFP conditions, and we probed the Mo2C surface chemistry, identity of the active sites, and deoxygenation pathways using in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations.« less

  12. Monitoring the formation of carbide crystal phases during the thermal decomposition of 3d transition metal dicarboxylate complexes

    SciTech Connect (OSTI)

    Huba, ZJ; Carpenter, EE

    2014-06-06

    Single molecule precursors can help to simplify the synthesis of complex alloys by minimizing the amount of necessary starting reagents. However, single molecule precursors are time consuming to prepare with very few being commercially available. In this study, a simple precipitation method is used to prepare Fe, Co, and Ni fumarate and succinate complexes. These complexes were then thermally decomposed in an inert atmosphere to test their efficiency as single molecule precursors for the formation of metal carbide phases. Elevated temperature X-ray diffraction was used to identify the crystal phases produced upon decomposition of the metal dicarboxylate complexes. Thermogravimetric analysis coupled with an infrared detector was used to identify the developed gaseous decomposition products. All complexes tested showed a reduction from the starting M2+ oxidation state to the M oxidation state, upon decomposition. Also, each complex tested showed CO2 and H2O as gaseous decomposition products. Nickel succinate, iron succinate, and iron fumarate complexes were found to form carbide phases upon decomposition. This proves that transition metal dicarboxylate salts can be employed as efficient single molecule precursors for the formation of metal carbide crystal phases.

  13. DEVELOPMENT OF ADVANCED DRILL COMPONENTS FOR BHA USING MICROWAVE TECHNOLOGY INCORPORATING CARBIDE, DIAMOND COMPOSITES AND FUNCTIONALLY GRADED MATERIALS

    SciTech Connect (OSTI)

    Dinesh Agrawal; Rustum Roy

    2003-01-01

    The microwave processing of materials is a new emerging technology with many attractive advantages over the conventional methods. The advantages of microwave technology for various ceramic systems has already been demonstrated and proven. The recent developments at Penn State have succeeded in applying the microwave technology for the commercialization of WC/Co and diamond based cutting and drilling tools, effectively sintering of metallic materials, and fabrication of transparent ceramics for advanced applications. In recent years, the Microwave Processing and Engineering Center at Penn State University in collaboration with our industrial partner, Dennis Tool Co. has succeeded in commercializing the developed microwave technology partially funded by DOE for WC/Co and diamond based cutting and drilling tools for gas and oil exploration operations. In this program we have further developed this technology to make diamond-carbide composites and metal-carbide-diamond functionally graded materials. Several actual product of diamond-carbide composites have been processed in microwave with better performance than the conventional product. The functionally graded composites with diamond as one of the components has been for the first time successfully developed. These are the highlights of the project.

  14. Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

    SciTech Connect (OSTI)

    King, Sean W. Tanaka, Satoru; Davis, Robert F.; Nemanich, Robert J.

    2015-09-15

    Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 7001000?C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200550?C) as well as higher temperatures (>700?C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ?750?C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800?C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700?C remain terminated by some surface CO and SiO bonding, they may still exhibit significant chemical reactivity due to the creation of surface dangling bonds resulting from H{sub 2} desorption from previously undetected silicon hydride and surface hydroxide species.

  15. Silicon Carbide Temperature Monitor Measurements at the High Temperature Test Laboratory

    SciTech Connect (OSTI)

    J. L. Rempe; K. G. Condie; D. L. Knudson; L. L. Snead

    2010-01-01

    Silicon carbide (SiC) temperature monitors are now available for use as temperature sensors in Advanced Test Reactor (ATR) irradiation test capsules. Melt wires or paint spots, which are typically used as temperature sensors in ATR static capsules, are limited in that they can only detect whether a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that may have occurred during irradiation. As part of the efforts initiated by the ATR National Scientific User Facility (NSUF) to make SiC temperature monitors available, a capability was developed to complete post-irradiation evaluations of these monitors. As discussed in this report, the Idaho National Laboratory (INL) selected the resistance measurement approach for detecting peak irradiation temperature from SiC temperature monitors. This document describes the INL efforts to develop the capability to complete these resistance measurements. In addition, the procedure is reported that was developed to assure that high quality measurements are made in a consistent fashion.

  16. Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

    SciTech Connect (OSTI)

    Huh, Chul Kim, Tae-Youb; Ahn, Chang-Geun; Kim, Bong Kyu

    2015-05-25

    We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injected into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.

  17. Light Water Reactor Sustainability Program Status of Silicon Carbide Joining Technology Development

    SciTech Connect (OSTI)

    Shannon M. Bragg-Sitton

    2013-09-01

    Advanced, accident tolerant nuclear fuel systems are currently being investigated for potential application in currently operating light water reactors (LWR) or in reactors that have attained design certification. Evaluation of potential options for accident tolerant nuclear fuel systems point to the potential benefits of silicon carbide (SiC) relative to Zr-based alloys, including increased corrosion resistance, reduced oxidation and heat of oxidation, and reduced hydrogen generation under steam attack (off-normal conditions). If demonstrated to be applicable in the intended LWR environment, SiC could be used in nuclear fuel cladding or other in-core structural components. Achieving a SiC-SiC joint that resists corrosion with hot, flowing water, is stable under irradiation and retains hermeticity is a significant challenge. This report summarizes the current status of SiC-SiC joint development work supported by the Department of Energy Light Water Reactor Sustainability Program. Significant progress has been made toward SiC-SiC joint development for nuclear service, but additional development and testing work (including irradiation testing) is still required to present a candidate joint for use in nuclear fuel cladding.

  18. Carbide/nitride grain refined rare earth-iron-boron permanent magnet and method of making

    DOE Patents [OSTI]

    McCallum, R.W.; Branagan, D.J.

    1996-01-23

    A method of making a permanent magnet is disclosed wherein (1) a melt is formed having a base alloy composition comprising RE, Fe and/or Co, and B (where RE is one or more rare earth elements) and (2) TR (where TR is a transition metal selected from at least one of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Al) and at least one of C and N are provided in the base alloy composition melt in substantially stoichiometric amounts to form a thermodynamically stable compound (e.g. TR carbide, nitride or carbonitride). The melt is rapidly solidified in a manner to form particulates having a substantially amorphous (metallic glass) structure and a dispersion of primary TRC, TRN and/or TRC/N precipitates. The amorphous particulates are heated above the crystallization temperature of the base alloy composition to nucleate and grow a hard magnetic phase to an optimum grain size and to form secondary TRC, TRN and/or TRC/N precipitates dispersed at grain boundaries. The crystallized particulates are consolidated at an elevated temperature to form a shape. During elevated temperature consolidation, the primary and secondary precipitates act to pin the grain boundaries and minimize deleterious grain growth that is harmful to magnetic properties. 33 figs.

  19. Carbide/nitride grain refined rare earth-iron-boron permanent magnet and method of making

    DOE Patents [OSTI]

    McCallum, R. William (Ames, IA); Branagan, Daniel J. (Ames, IA)

    1996-01-23

    A method of making a permanent magnet wherein 1) a melt is formed having a base alloy composition comprising RE, Fe and/or Co, and B (where RE is one or more rare earth elements) and 2) TR (where TR is a transition metal selected from at least one of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Al) and at least one of C and N are provided in the base alloy composition melt in substantially stoichiometric amounts to form a thermodynamically stable compound (e.g. TR carbide, nitride or carbonitride). The melt is rapidly solidified in a manner to form particulates having a substantially amorphous (metallic glass) structure and a dispersion of primary TRC, TRN and/or TRC/N precipitates. The amorphous particulates are heated above the crystallization temperature of the base alloy composition to nucleate and grow a hard magnetic phase to an optimum grain size and to form secondary TRC, TRN and/or TRC/N precipitates dispersed at grain boundaries. The crystallized particulates are consolidated at an elevated temperature to form a shape. During elevated temperature consolidation, the primary and secondary precipitates act to pin the grain boundaries and minimize deleterious grain growth that is harmful to magnetic properties.

  20. SILICON CARBIDE MICRO-DEVICES FOR COMBUSTION GAS SENSING UNDER HARSH CONDITIONS

    SciTech Connect (OSTI)

    Ruby N. Ghosh; Peter Tobias; Roger G. Tobin

    2004-10-01

    A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device that can detect hydrogen containing species in chemically reactive, high temperature environments. For these capacitive sensors we have determined that the optimum sensor operating point in terms of sensor lifetime and response time is at midgap. Detailed measurements of the oxide leakage current as a function of temperature were performed to investigate the high temperature reliability of the devices. In addition, robust metallization and electrical contacting techniques have been developed for device operation at elevated temperatures. To characterize the time response of the sensor responses in the millisecond range, a conceptually new apparatus has been built. Using laser induced fluorescence imaging techniques we have shown that the gas underneath the sensor can be completely exchanged with a time constant under 1 millisecond. Ultrahigh vacuum studies of the surface chemistry of the platinum gate have shown that sensor deactivation by adsorbed sulfur is a possible problem. Investigations on the chemical removal of sulfur by catalytic oxidation or reduction are continuing.

  1. Radiation-tolerant joining technologies for silicon carbide ceramics and composites

    SciTech Connect (OSTI)

    Katoh, Yutai; Snead, Lance L.; Cheng, Ting; Shih, Chunghao; Lewis, W. Daniel; Koyanagi, Takaaki; Hinoki, Tetsuya; Henager, Charles H.; Ferraris, Monica

    2014-05-01

    Silicon carbide (SiC) for nuclear structural applications, whether in the monolithic ceramic or composite form, will require a robust joining technology capable of withstanding the harsh nuclear environment. This paper presents significant progress made towards identifying and processing irradiation-tolerant joining methods for nuclear-grade SiC. In doing so, a standardized methodology for carrying out joint testing has been established consistent with the small volume samples mandated by neutron irradiation testing. Candidate joining technologies were limited to those that provide low induced radioactivity and included titanium diffusion bonding, TiSiC MAX-phase joining, calciaalumina glassceramic joining, and transient eutectic-phase SiC joining. Samples of these joints were irradiated in the Oak Ridge National Laboratory High Flux Isotope Reactor at 500 or 800 ?C, and their microstructure and mechanical properties were compared to pre-irradiation conditions. Within the limitations of statistics, all joining methodologies presented retained their joint mechanical strength to 3 dpa at 500 ?C, thus indicating the first results obtained on irradiation-stable SiC joints. Under the more aggressive irradiation conditions (800 ?C, 5 dpa), some joint materials exhibited significant irradiation-induced microstructural evolution; however, the effect of irradiation on joint strength appeared rather limited.

  2. Tritium trapping in silicon carbide in contact with solid breeder under high flux isotope reactor irradiation

    SciTech Connect (OSTI)

    H. Katsui; Y. Katoh; A. Hasegawa; M. Shimada; Y. Hatano; T. Hinoki; S. Nogami; T. Tanaka; S. Nagata; T. Shikama

    2013-11-01

    The trapping of tritium in silicon carbide (SiC) injected from ceramic breeding materials was examined via tritium measurements using imaging plate (IP) techniques. Monolithic SiC in contact with ternary lithium oxide (lithium titanate and lithium aluminate) as a ceramic breeder was irradiated in the High Flux Isotope Reactor (HFIR) in Oak Ridge, Tennessee, USA. The distribution of photo-stimulated luminescence (PSL) of tritium in SiC was successfully obtained, which separated the contribution of 14C -rays to the PSL. The tritium incident from ceramic breeders was retained in the vicinity of the SiC surface even after irradiation at 1073 K over the duration of ~3000 h, while trapping of tritium was not observed in the bulk region. The PSL intensity near the SiC surface in contact with lithium titanate was higher than that obtained with lithium aluminate. The amount of the incident tritium and/or the formation of a Li2SiO3 phase on SiC due to the reaction with lithium aluminate under irradiation likely were responsible for this observation.

  3. Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; Snead, Lance Lewis

    2016-01-14

    Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperaturemore » and removes possible user-introduced error while standardizing the analysis. In addition, this method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.« less

  4. Evaluations of University of Wisconsin Silicon Carbide Temperature Monitors 300 LO and 400 LO B

    SciTech Connect (OSTI)

    K. L. Davis; J. L. Rempe; D. L. Knudson; B. M. Chase; T. C. Unruh

    2011-12-01

    Silicon carbide (SiC) temperature monitors 05R4-02-A KG1403 (300 LO) and 05R4-01-A KG1415 (400 LO B) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak irradiation temperatures. HTTL measurements indicate that the peak irradiation temperature for the 300 LO monitor was 295 {+-} 20 C and the peak irradiation temperature for the 400 LO B monitor was 294 {+-} 25 C. Two silicon carbide (SiC) temperature monitors irradiated in the Advanced Test Reactor (ATR) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak temperature during irradiation. These monitors were irradiated as part of the University of Wisconsin Pilot Project with a target dose of 3 dpa. Temperature monitors were fabricated from high density (3.203 g/cm3) SiC manufactured by Rohm Haas with a nominal size of 12.5 mm x 1.0 mm x 0.75 mm (see Attachment A). Table 1 provides identification for each monitor with an expected peak irradiation temperature range based on preliminary thermal analysis (see Attachment B). Post irradiation calculations are planned to reduce uncertainties in these calculated temperatures. Since the early 1960s, SiC has been used as a post-irradiation temperature monitor. As noted in Reference 2, several researchers have observed that neutron irradiation induced lattice expansion of SiC annealed out when the post-irradiation annealing temperature exceeds the peak irradiation temperature. As noted in Reference 3, INL uses resistivity measurements to infer peak irradiation temperature from SiC monitors. Figure 1 depicts the equipment at the HTTL used to evaluate the SiC monitors. The SiC monitors are heated in the annealing furnace using isochronal temperature steps that, depending on customer needs, can range from 50 to 800 C. This furnace is located under a ventilation hood within the stainless steel enclosure. The ventilation system is activated during heating so that any released vapors are vented through this system. Annealing temperatures are recorded using a National Institute of Standards and Technology (NIST) traceable thermocouple inserted into an alumina tube in the furnace. After each isochronal annealing, the specimens are placed in a specialized fixture located in the constant temperature chamber (maintained at 30 C) for a minimum of 30 minutes. After the 30 minute wait time, each specimen's resistance is measured using the specialized fixture and a calibrated DC power analyzer. This report discusses the evaluation of the SiC monitors and presents the results. Testing was conducted in accordance with Reference 3. Sections 2 and 3 present the data collected for each monitor and provide interpretation of the data. Section 4 presents the evaluated temperature results.

  5. New insights into the enigma of boron carbide inverse molecular behavior

    SciTech Connect (OSTI)

    Dera, Przemyslaw; Manghnani, Murli H.; Hushur, Anwar; Hu, Yi; Tkachev, Sergey

    2014-07-01

    Equation of state and compression mechanism of nearly stoichiometric boron carbide B{sub 4}C were investigated using diamond anvil cell single crystal synchrotron X-ray diffraction technique up to a maximum quasi-hydrostatic pressure of 74.0(1) GPa in neon pressure transmitting medium at ambient temperature. No signatures of structural phase transitions were observed on compression. Crystal structure refinements indicate that the icosahedral units are less compressible (13% volume reduction at 60 GPa) than the unit cell volume (18% volume reduction at 60 GPa), contrary to expectations based on the inverse molecular behavior hypothesis, but consistent with spectroscopic evidence and first principles calculations. The high-pressure crystallographic refinements reveal that the nature of the chemical bonds (two, versus three centered character) has marginal effect on the bond compressibility and the compression of the crystal is mainly governed by the force transfer between the rigid icosahedral structural units. - Graphical abstract: Single crystal measurements of equation of state and compression mechanism of B{sub 4}C show that the icosahedral units are less compressibe than the unit cell volume, despite the threei-ceneterd nature of some icosahedral bonds. - Highlights: Equation of state and compression mechanism of B{sub 4}C were measured to 75 GPa. No signatures of structural phase transitions were observed on compression. Icosahedral units are less compressibe than the unit cell volume. The nature of the chemical bonds has mariginal effect on the bond compressibility. The compression is governed by force transfer between the rigid icosahedra.

  6. Carbide-Derived Carbons with Tunable Porosity Optimized for Hydrogen Storage

    SciTech Connect (OSTI)

    Fisher, John E.; Gogotsi, Yury; Yildirim, Taner

    2010-01-07

    On-board hydrogen storage is a key requirement for fuel cell-powered cars and trucks. Porous carbon-based materials can in principle adsorb more hydrogen per unit weight at room temperature than liquid hydrogen at -176 oC. Achieving this goal requires interconnected pores with very high internal surface area, and binding energies between hydrogen and carbon significantly enhanced relative to H2 on graphite. In this project a systematic study of carbide-derived carbons, a novel form of porous carbon, was carried out to discover a high-performance hydrogen sorption material to meet the goal. In the event we were unable to improve on the state of the art in terms of stored hydrogen per unit weight, having encountered the same fundamental limit of all porous carbons: the very weak interaction between H2 and the carbon surface. On the other hand we did discover several strategies to improve storage capacity on a volume basis, which should be applicable to other forms of porous carbon. Further discoveries with potentially broader impacts include Proof that storage performance is not directly related to pore surface area, as had been previously claimed. Small pores (< 1.5 nm) are much more effective in storing hydrogen than larger ones, such that many materials with large total surface areas are sub-par performers. Established that the distribution of pore sizes can be controlled during CDC synthesis, which opens the possibility of developing high performance materials within a common family while targeting widely disparate applications. Examples being actively pursued with other funding sources include methane storage, electrode materials for batteries and supercapacitors with record high specific capacitance, and perm-selective membranes which bind cytokines for control of infections and possibly hemodialysis filters.

  7. Assessment of Silicon Carbide Composites for Advanced Salt-Cooled Reactors

    SciTech Connect (OSTI)

    Katoh, Yutai; Wilson, Dane F; Forsberg, Charles W

    2007-09-01

    The Advanced High-Temperature Reactor (AHTR) is a new reactor concept that uses a liquid fluoride salt coolant and a solid high-temperature fuel. Several alternative fuel types are being considered for this reactor. One set of fuel options is the use of pin-type fuel assemblies with silicon carbide (SiC) cladding. This report provides (1) an initial viability assessment of using SiC as fuel cladding and other in-core components of the AHTR, (2) the current status of SiC technology, and (3) recommendations on the path forward. Based on the analysis of requirements, continuous SiC fiber-reinforced, chemically vapor-infiltrated SiC matrix (CVI SiC/SiC) composites are recommended as the primary option for further study on AHTR fuel cladding among various industrially available forms of SiC. Critical feasibility issues for the SiC-based AHTR fuel cladding are identified to be (1) corrosion of SiC in the candidate liquid salts, (2) high dose neutron radiation effects, (3) static fatigue failure of SiC/SiC, (4) long-term radiation effects including irradiation creep and radiation-enhanced static fatigue, and (5) fabrication technology of hermetic wall and sealing end caps. Considering the results of the issues analysis and the prospects of ongoing SiC research and development in other nuclear programs, recommendations on the path forward is provided in the order or priority as: (1) thermodynamic analysis and experimental examination of SiC corrosion in the candidate liquid salts, (2) assessment of long-term mechanical integrity issues using prototypical component sections, and (3) assessment of high dose radiation effects relevant to the anticipated operating condition.

  8. Summary of the radiological assessment of the fuel cycle for a thorium-uranium carbide-fueled fast breeder reactor

    SciTech Connect (OSTI)

    Tennery, V.J.; Bomar, E.S.; Bond, W.D.; Meyer, H.R.; Morse, L.E.; Till, J.E.; Yalcintas, M.G.

    1980-01-01

    A large fraction of the potential fuel for nuclear power reactors employing fissionable materials exists as ores of thorium. In addition, certain characteristics of a fuel system based on breeding of the fissionable isotope {sup 233}U from thorium offer the possibility of a greater resistance to the diversion of fissionable material for the fabrication of nuclear weapons. This report consolidates into a single source the principal content of two previous reports which assess the radiological environmental impact of mining and milling of thorium ore and of the reprocessing and refabrication of spent FBR thorium-uranium carbide fuel.

  9. Nanoporous, Metal Carbide, Surface Diffusion Membranes for High Temperature Hydrogen Separations

    SciTech Connect (OSTI)

    Way, J.; Wolden, Colin

    2013-09-30

    Colorado School of Mines (CSM) developed high temperature, hydrogen permeable membranes that contain no platinum group metals with the goal of separating hydrogen from gas mixtures representative of gasification of carbon feedstocks such as coal or biomass in order to meet DOE NETL 2015 hydrogen membrane performance targets. We employed a dual synthesis strategy centered on transition metal carbides. In the first approach, novel, high temperature, surface diffusion membranes based on nanoporous Mo{sub 2}C were fabricated on ceramic supports. These were produced in a two step process that consisted of molybdenum oxide deposition followed by thermal carburization. Our best Mo{sub 2}C surface diffusion membrane achieved a pure hydrogen flux of 367 SCFH/ft{sup 2} at a feed pressure of only 20 psig. The highest H{sub 2}/N{sub 2} selectivity obtained with this approach was 4.9. A transport model using dusty gas theory was derived to describe the hydrogen transport in the Mo{sub 2}C coated, surface diffusion membranes. The second class of membranes developed were dense metal foils of BCC metals such as vanadium coated with thin (< 60 nm) Mo{sub 2}C catalyst layers. We have fabricated a Mo{sub 2}C/V composite membrane that in pure gas testing delivered a H{sub 2} flux of 238 SCFH/ft{sup 2} at 600 C and 100 psig, with no detectable He permeance. This exceeds the 2010 DOE Target flux. This flux is 2.8 times that of pure Pd at the same membrane thickness and test conditions and over 79% of the 2015 flux target. In mixed gas testing we achieved a permeate purity of ?99.99%, satisfying the permeate purity milestone, but the hydrogen permeance was low, ~0.2 SCFH/ft{sup 2}.psi. However, during testing of a Mo{sub 2}C coated Pd alloy membrane with DOE 1 feed gas mixture a hydrogen permeance of >2 SCFH/ft{sup 2}.psi was obtained which was stable during the entire test, meeting the permeance associated with the 2010 DOE target flux. Lastly, the Mo{sub 2}C/V composite membranes were shown to be stable for at least 168 hours = one week, including cycling at high temperature and alternating He/H{sub 2} exposure.

  10. Silicon Carbide Micro-devices for Combustion Gas Sensing under Harsh Conditions

    SciTech Connect (OSTI)

    Ruby Ghosh; Reza Loloee; Roger Tobin

    2008-09-30

    A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device, Pt/SiO{sub 2}/SiC that can detect hydrogen-containing species in chemically reactive, high temperature (600 C) environments. We demonstrate that the device can be used as a hydrogen monitor in syngas applications of common interferants as well as sulfur and water vapor. These measurements were made in the Catalyst Screening Unit at NETL, Morgantown under atmospheric conditions. The sensor response to hydrogen gas at 350 C is 240 mV/decade, this is significantly higher than the device response to room temperature gas or that predicted from vacuum chamber studies. The enhanced catalytic activity of the platinum sensing film under energy plant operating conditions was investigated via AFM, x-ray diffraction, TEM and x-ray photoelectron spectroscopy. Our characterization indicated that exposure to high temperature gases significantly modifies the morphology of the Pt catalytic film and the Pt/SiO{sub 2} interfacial region, which we tentatively attribute to the enhanced hydrogen sensitivity of the sensing film. A model for the hydrogen/oxygen response of the SiC device under atmospheric conditions was developed. It is based on two independent phenomena: a chemically induced shift in the metal-semiconductor work function difference and the passivation/creation of charged states at the SiO{sub 2}-SiC interface. The optimum operating set point for the SiC sensor with respect to response time and long term reliability was determined to be close to mid-gap. Ultrahigh vacuum (UHV) techniques were used to investigate the effects of sulfur contamination on the Pt gate. Exposure to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20-600 times greater than the H2S level, rapidly coated the gate with a monolayer of sulfur. Although hydrogen exposure could not remove the adsorbed sulfur, oxygen was effective at removing sulfur with no evidence of irreversible changes in device behavior. The role of oxygen in the functioning of the SiC sensors was also investigated. All of the results are consistent with oxygen acting through its surface reactions with hydrogen, including the need for oxygen to reset the device to a fully hydrogen-depleted state and competition between hydrogen oxidation and hydrogen diffusion to metal/oxide interface sites. A strong sensor response to the unsaturated linear hydrocarbon propene (C{sub 3}H{sub 6}) was observed.

  11. Elastic properties, sp fraction, and Raman scattering in low and high pressure synthesized diamond-like boron rich carbides

    SciTech Connect (OSTI)

    Zinin, Pavel V.; Burgess, Katherine; Jia, Ruth; Sharma, Shiv; Ming, Li-Chung; Liu, Yongsheng; Ciston, Jim; Hong, Shiming

    2014-10-07

    Dense BC{sub x} phases with high boron concentration are predicted to be metastable, superhard, and conductors or superconductors depending on boron concentration. However, up to this point, diamond-like boron rich carbides BC{sub x} (dl-BC{sub x}) phases have been thought obtainable only through high pressure and high temperature treatment, necessitating small specimen volume. Here, we use electron energy loss spectroscopy combined with transmission electron microscopy, Raman spectroscopy, surface Brillouin scattering, laser ultrasonics (LU) technique, and analysis of elastic properties to demonstrate that low pressure synthesis (chemical vapor deposition) of BC{sub x} phases may also lead to the creation of diamond-like boron rich carbides. The elastic properties of the dl-BC{sub x} phases depend on the carbon spversus sp content, which decreases with increasing boron concentration, while the boron bonds determine the shape of the Raman spectra of the dl-BC{sub x} after high pressure-high temperature treatment. Using the estimation of the density value based on the sp fraction, the shear modulus ? of dl-BC?, containing 10% carbon atoms with sp bonds, and dl-B?C?, containing 38% carbon atoms with sp bonds, were found to be ? = 19.3 GPa and ? = 170 GPa, respectively. The presented experimental data also imply that boron atoms lead to a creation of sp bonds during the deposition processes.

  12. Nanostructured Metal Carbides for Aprotic Li-O2 Batteries. New Insights into Interfacial Reactions and Cathode Stability

    SciTech Connect (OSTI)

    Kundu, Dipan; Black, Robert; Adams, Brian; Harrison, Katharine; Zavadil, Kevin R.; Nazar, Linda F.

    2015-05-01

    The development of nonaqueous Lioxygen batteries, which relies on the reversible reaction of Li + O2 to give lithium peroxide (Li2O2), is challenged by several factors, not the least being the high charging voltage that results when carbon is typically employed as the cathode host. We report here on the remarkably low 3.2 V potential for Li2O2 oxidation on a passivated nanostructured metallic carbide (Mo2C), carbon-free cathode host. Furthermore, online mass spectrometry coupled with X-ray photoelectron spectroscopy unequivocally demonstrates that lithium peroxide is simultaneously oxidized together with the LixMoO3-passivated conductive interface formed on the carbide, owing to their close redox potentials. We found that the process rejuvenates the surface on each cycle upon electrochemical charge by releasing LixMoO3 into the electrolyte, explaining the low charging potential.

  13. Mechanochemical synthesis of tungsten carbide nano particles by using WO{sub 3}/Zn/C powder mixture

    SciTech Connect (OSTI)

    Hoseinpur, Arman; Vahdati Khaki, Jalil; Marashi, Maryam Sadat

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? Nano particles of WC are synthesized by mechanochemical process. ? Zn was used to reduce WO{sub 3}. ? By removing ZnO from the milling products with an acid leaching, WC will be the final products. ? XRD results showed that the reduction reactions were completed after 36 h. ? TEM and SEM images showed that the morphology of produced powder is nearly spherical like. -- Abstract: In this research we introduce a new, facile, and economical system for fabrication of tungsten carbide (WC) nano particle powder. In this system WO{sub 3}, Zn, and C have been ball-milled for several hours, which led to the synthesis of tungsten carbide nano particles. The synthesized WC can successfully be separated from the ball-milled product by subjecting the product powder to diluted HCl for removing ZnO and obtaining WC. X-ray diffraction (XRD) analysis indicates that the reduction of WO{sub 3} will be completed gradually by increasing milling time up to 36 h. Scanning electron microscope (SEM), and transmission electron microscope (TEM) images show that after 36 h of milling the particle size of the fabricated powder is nano metric (about 20 nm). Results have shown that this system can surmount some main problems occurred in previous similar WC synthesizing systems. For example carbothermic reduction reactions, which lead to the synthesis of W{sub 2}C instead of WC, would not be activated because in this system reactions take place gradually.

  14. Zirconium and hafnium separation at Y-12

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the sea by French author Jules Verne. Of course there was then a movie made by Walt Disney in 1954 named 20,000 leagues under the sea that used the same Nautilus sub- marine...

  15. Composition and method for brazing graphite to graphite

    DOE Patents [OSTI]

    Taylor, Albert J. (Ten Mile, TN); Dykes, Norman L. (Oak Ridge, TN)

    1984-01-01

    The present invention is directed to a brazing material for joining graphite structures that can be used at temperatures up to about 2800.degree. C. The brazing material formed of a paste-like composition of hafnium carbide and uranium oxide with a thermosetting resin. The uranium oxide is converted to uranium dicarbide during the brazing operation and then the hafnium carbide and uranium dicarbide form a liquid phase at a temperature about 2600.degree. C. with the uranium diffusing and vaporizing from the joint area as the temperature is increased to about 2800.degree. C. so as to provide a brazed joint consisting essentially of hafnium carbide. This brazing temperature for hafnium carbide is considerably less than the eutectic temperature of hafnium carbide of about 3150.degree. C. The brazing composition also incorporates the thermosetting resin so that during the brazing operation the graphite structures may be temporarily bonded together by thermosetting the resin so that machining of the structures to final dimensions may be completed prior to the completion of the brazing operation. The resulting brazed joint is chemically and thermally compatible with the graphite structures joined thereby and also provides a joint of sufficient integrity so as to at least correspond with the strength and other properties of the graphite.

  16. Theoretical Investigation of Hydrogen Adsorption and Dissociation on Iron and Iron Carbide Surfaces Using the ReaxFF Reactive Force Field Method

    SciTech Connect (OSTI)

    Zou, Chenyu; van Duin, Adri C.T.; Sorescu, Dan C.

    2012-06-01

    We have developed a ReaxFF reactive force field to describe hydrogen adsorption and dissociation on iron and iron carbide surfaces relevant for simulation of FischerTropsch (FT) synthesis on iron catalysts. This force field enables large system (>>1000 atoms) simulations of hydrogen related reactions with iron. The ReaxFF force field parameters are trained against a substantial amount of structural and energetic data including the equations of state and heats of formation of iron and iron carbide related materials, as well as hydrogen interaction with iron surfaces and different phases of bulk iron. We have validated the accuracy and applicability of ReaxFF force field by carrying out molecular dynamics simulations of hydrogen adsorption, dissociation and recombination on iron and iron carbide surfaces. The barriers and reaction energies for molecular dissociation on these two types of surfaces have been compared and the effect of subsurface carbon on hydrogen interaction with iron surface is evaluated. We found that existence of carbon atoms at subsurface iron sites tends to increase the hydrogen dissociation energy barrier on the surface, and also makes the corresponding hydrogen dissociative state relatively more stable compared to that on bare iron. These properties of iron carbide will affect the dissociation rate of H{sub 2} and will retain more surface hydride species, thus influencing the dynamics of the FT synthesis process.

  17. Surface Quality of Ti-6%Al-4%V ELI When Machined Using CVD-Carbide Tools at High Cutting Speed

    SciTech Connect (OSTI)

    Gusri, A. I.; Che Hassan, C. H.; Jaharah, A. G.; Yasir, A.; Zaid, Y.; Yanuar, B.

    2011-01-17

    Machining of Ti-6Al-4V ELI becomes more interested topic due to extremely weight-to-strength ratio and resistance to corrosion at elevated temperature. Quality of machined surface is presented by surface roughness, surface texture and damages of microstructure of titanium alloys. The turning parameters evaluated are cutting speed of 55-95 m/min, feed rate of 0.15-0.35 mm/rev, depth of cut of 0.10-0.20 mm and tool grade of CVD carbide tools. The results show the trend lines of surface roughness value are higher at the initial machining and the surface texture profile has a strong correlation with the feed rate. At the machining condition of cutting speed of 95 m/min, feed rate of 0.35 mm/rev and depth of cut of 0.10 mm produced the with layer with thickness of 2.0 {mu}m.

  18. Composition and method for brazing graphite to graphite

    DOE Patents [OSTI]

    Taylor, A.J.; Dykes, N.L.

    1982-08-10

    A brazing material is described for joining graphite structures that can be used up to 2800/sup 0/C. The brazing material is formed of a paste-like composition of hafnium carbide and uranium oxide with a thermosetting resin. The uranium oxide is converted to uranium dicarbide during the brazing operation and then the hafnium carbide and uranium dicarbide form a liquid phase at a temperature about 2600/sup 0/C with the uranium diffusing and vaporizing from the joint area as the temperature is increased to about 2800/sup 0/C so as to provide a brazed joint consisting essentially of hafnium carbide. The resulting brazed joint is chemically and thermally compatible with the graphite structures.

  19. Composites comprising silicon carbide fibers dispersed in magnesia-aluminate matrix and fabrication thereof and of other composites by sinter forging

    DOE Patents [OSTI]

    Panda, Prakash C. (Ithaca, NY); Seydel, Edgar R. (Ithaca, NY); Raj, Rishi (Ithaca, NY)

    1989-10-03

    A novel ceramic-ceramic composite of a uniform dispersion of silicon carbide fibers in a matrix of MgO.multidot.nAl.sub.2 O.sub.3 wherein n ranges from about 1 to about 4.5, said composite comprising by volume from 1 to 50% silicon carbide fibers and from 99 to 50% MgO.multidot.nAl.sub.2 O.sub.3. The composite is readily fabricated by forming a powder comprising a uniform dispersion of silicon carbide fibers in poorly crystalline phase comprising MgO and Al.sub.2 O.sub.3 in a mole ratio of n and either (a) hot pressing or preferably (b) cold pressing to form a preform and then forging utilizing a temperature in the range of 1100.degree. C. to 1900.degree. C. and a strain rate ranging from about 10.sup.-5 seconds .sup.-1 to about 1 seconds .sup.-1 so that surfaces cracks do not appear to obtain a shear deformation greater than 30%.

  20. Active wear and failure mechanisms of TiN-coated high speed steel and TiN-coated cemented carbide tools when machining powder metallurgically made stainless steels

    SciTech Connect (OSTI)

    Jiang, L.; Haenninen, H.; Paro, J.; Kauppinen, V.

    1996-09-01

    In this study, active wear and failure mechanisms of both TiN-coated high speed steel and TiN-coated cemented carbide tools when machining stainless steels made by powder metallurgy in low and high cutting speed ranges, respectively, have been investigated. Abrasive wear mechanisms, fatigue-induced failure, and adhesive and diffusion wear mechanisms mainly affected the tool life of TiN-coated high speed steel tools at cutting speeds below 35 m/min, between 35 and 45 m/min, and over 45 m/min, respectively. Additionally, fatigue-induced failure was active at cutting speeds over 45 m/min in the low cutting speed range when machining powder metallurgically made duplex stainless steel 2205 and austenitic stainless steel 316L. In the high cutting speed range, from 100 to 250 m/min, fatigue-induced failure together with diffusion wear mechanism, affected the tool life of TiN-coated cemented carbide tools when machining both 316L and 2205 stainless steels. It was noticed that the tool life of TiN-coated high speed steel tools used in the low cutting speed range when machining 2205 steel was longer than that when machining 316L steel, whereas the tool life of TiN-coated cemented carbide tools used in the high cutting speed range when machining 316L steel was longer than that when machining 2205 steel.

  1. Tungsten carbide/porous carbon composite as superior support for platinum catalyst toward methanol electro-oxidation

    SciTech Connect (OSTI)

    Jiang, Liming; Fu, Honggang; Wang, Lei; Mu, Guang; Jiang, Baojiang; Zhou, Wei; Wang, Ruihong

    2014-01-01

    Graphical abstract: The WC nanoparticles are well dispersed in the carbon matrix. The size of WC nanoparticles is about 30 nm. It can be concluded that tungsten carbide and carbon composite was successfully prepared by the present synthesis conditions. - Highlights: The WC/PC composite with high specific surface area was prepared by a simple way. The Pt/WC/PC catalyst has superior performance toward methanol electro-oxidation. The current density for methanol electro-oxidation is as high as 595.93 A g{sup ?1} Pt. The Pt/WC/PC catalyst shows better durability and stronger CO electro-oxidation. The performance of Pt/WC/PC is superior to the commercial Pt/C (JM) catalyst. - Abstract: Tungsten carbide/porous carbon (WC/PC) composites have been successfully synthesized through a surfactant assisted evaporation-induced-assembly method, followed by a thermal treatment process. In particular, WC/PC-35-1000 composite with tungsten content of 35% synthesized at the carbonized temperature of 1000 C, exhibited a specific surface area (S{sub BET}) of 457.92 m{sup 2} g{sup ?1}. After loading Pt nanoparticles (NPs), the obtained Pt/WC/PC-35-1000 catalyst exhibits the highest unit mass electroactivity (595.93 A g{sup ?1} Pt) toward methanol electro-oxidation, which is about 2.6 times as that of the commercial Pt/C (JM) catalyst. Furthermore, the Pt/WC/PC-35-1000 catalyst displays much stronger resistance to CO poisoning and better durability toward methanol electrooxidation compared with the commercial Pt/C (JM) catalyst. The high electrocatalytic activity, strong poison-resistivity and good stability of Pt/WC/PC-35-1000 catalyst are attributed to the porous structures and high specific surface area of WC/PC support could facilitate the rapid mass transportation. Moreover, synergistic effect between WC and Pt NPs is favorable to the higher catalytic performance.

  2. Enhancement of oxidation resistance of graphite foams by polymer derived-silicon carbide coating for concentrated solar power applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, T.; Singh, D.; Singh, M.

    2015-05-01

    Graphite foam with extremely high thermal conductivity has been investigated to enhance heat transfer of latent heat thermal energy storage (LHTES) systems. However, the use of graphite foam for elevated temperature applications (>600 °C) is limited due to poor oxidation resistance of graphite. In the present study, oxidation resistance of graphite foam coated with silicon carbide (SiC) was investigated. A pre-ceramic polymer derived coating (PDC) method was used to form a SiC coating on the graphite foams. Post coating deposition, the samples were analyzed by scanning electron microscopy and energy dispersive spectroscopy. The oxidation resistance of PDC-SiC coating was quantifiedmore » by measuring the weight of the samples at several measuring points. The experiments were conducted under static argon atmosphere in a furnace. After the experiments, oxidation rates (%/hour) were calculated to predict the lifetime of the graphite foams. The experimental results showed that the PDC-SiC coating could prevent the oxidation of graphite foam under static argon atmosphere up to 900 °C.« less

  3. High Dose Neutron Irradiation of Hi-Nicalon Type S Silicon Carbide Composites, Part 2. Mechanical and Physical Properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Katoh, Yutai; Nozawa, Takashi; Shih, Chunghao Phillip; Ozawa, Kazumi; Koyanagi, Takaaki; Porter, Wallace D; Snead, Lance Lewis

    2015-01-07

    Nuclear-grade silicon carbide (SiC) composite material was examined for mechanical and thermophysical properties following high-dose neutron irradiation in the High Flux Isotope Reactor at a temperature range of 573–1073 K. Likewise, the material was chemical vapor-infiltrated SiC-matrix composite with a two-dimensional satin weave Hi-Nicalon Type S SiC fiber reinforcement and a multilayered pyrocarbon/SiC interphase. Moderate (1073 K) to very severe (573 K) degradation in mechanical properties was found after irradiation to >70 dpa, whereas no evidence was found for progressive evolution in swelling and thermal conductivity. The swelling was found to recover upon annealing beyond the irradiation temperature, indicating themore » irradiation temperature, but only to a limited extent. Moreover, the observed strength degradation is attributed primarily to fiber damage for all irradiation temperatures, particularly a combination of severe fiber degradation and likely interphase damage at relatively low irradiation temperatures.« less

  4. The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.

    SciTech Connect (OSTI)

    Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

    2013-08-01

    The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250C, the temperature may reach 1600C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

  5. Enhancement of oxidation resistance of graphite foams by polymer derived-silicon carbide coating for concentrated solar power applications

    SciTech Connect (OSTI)

    Kim, T.; Singh, D.; Singh, M.

    2015-05-01

    Graphite foam with extremely high thermal conductivity has been investigated to enhance heat transfer of latent heat thermal energy storage (LHTES) systems. However, the use of graphite foam for elevated temperature applications (>600 C) is limited due to poor oxidation resistance of graphite. In the present study, oxidation resistance of graphite foam coated with silicon carbide (SiC) was investigated. A pre-ceramic polymer derived coating (PDC) method was used to form a SiC coating on the graphite foams. Post coating deposition, the samples were analyzed by scanning electron microscopy and energy dispersive spectroscopy. The oxidation resistance of PDC-SiC coating was quantified by measuring the weight of the samples at several measuring points. The experiments were conducted under static argon atmosphere in a furnace. After the experiments, oxidation rates (%/hour) were calculated to predict the lifetime of the graphite foams. The experimental results showed that the PDC-SiC coating could prevent the oxidation of graphite foam under static argon atmosphere up to 900 C.

  6. High dose neutron irradiation of Hi-Nicalon Type S silicon carbide composites, Part 1: Microstructural evaluations

    SciTech Connect (OSTI)

    Perez-Bergquist, Alex G; Nozawa, Takashi; Shih, Chunghao Phillip; Leonard, Keith J; Snead, Lance Lewis; Katoh, Yutai

    2015-01-01

    Over the past decade, significant progress has been made in the development of silicon carbide (SiC) composites, composed of near-stoichiometric SiC fibers embedded in a crystalline SiC matrix, to the point that such materials can now be considered nuclear grade. Recent neutron irradiation studies of Hi-Nicalon Type S SiC composites showed excellent radiation response at damage levels of 30 40 dpa at temperatures of 300 800 C. However, more recent studies of these same fiber composites irradiated to damage levels of >70 dpa at similar temperatures showed a marked decrease in ultimate flexural strength, particularly at 300 C. Here, electron microscopy is used to analyze the microstructural evolution of these irradiated composites in order to investigate the cause of the degradation. While minimal changes were observed in Hi-Nicalon Type S SiC composites irradiated at 800 C, substantial microstructural evolution is observed in those irradiated at 300 C. Specifically, carbonaceous particles in the fibers grew by 25% compared to the virgin case, and severe cracking occurred at interphase layers.

  7. The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials

    SciTech Connect (OSTI)

    Chen, Jian Huang, Zhengren; Chen, Zhongming; Yuan, Ming; Liu, Yan; Zhu, Yunzhou

    2014-03-01

    The microstructure and the distribution of carbon (C) in silicon carbide (SiC) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. The results show that C can restrain the growth of SiC grains and densify SiC ceramics with the increase of the C content, but residual C introduces a new phase-C to SiC ceramics. The hardness of C is less than that of SiC, so it's difficult to be polished as optical materials. The existence of C phase doesn't lead to the increase of surface roughness on SiC optical materials, but it leads to the decrease of the reflectance of SiC as the optical materials because the optical absorption of C in visible light is stronger than that of SiC. It indicates that C content is very important to the surface properties of SiC, which will affect the coating of chemical vapor deposition SiC or Si on the surface of SiC ceramics because of the different physical and chemical properties between C and SiC. - Highlights: The microstructure and the distribution of carbon were investigated. A new phase in the optical materials is introduced. It is difficult to be polished as the optical materials because of different phases. Carbon leads to the decrease of reflectance because of its absorption to light wave. The different properties may affect the coating of chemical vapor deposition on SiC.

  8. Transition metal carbides, nitrides and borides, and their oxygen containing analogs useful as water gas shift catalysts

    DOE Patents [OSTI]

    Thompson, Levi T.; Patt, Jeremy; Moon, Dong Ju; Phillips, Cory

    2003-09-23

    Mono- and bimetallic transition metal carbides, nitrides and borides, and their oxygen containing analogs (e.g. oxycarbides) for use as water gas shift catalysts are described. In a preferred embodiment, the catalysts have the general formula of M1.sub.A M2.sub.B Z.sub.C O.sub.D, wherein M1 is selected from the group consisting of Mo, W, and combinations thereof; M2 is selected from the group consisting of Fe, Ni, Cu, Co, and combinations thereof; Z is selected from the group consisting of carbon, nitrogen, boron, and combinations thereof; A is an integer; B is 0 or an integer greater than 0; C is an integer; O is oxygen; and D is 0 or an integer greater than 0. The catalysts exhibit good reactivity, stability, and sulfur tolerance, as compared to conventional water shift gas catalysts. These catalysts hold promise for use in conjunction with proton exchange membrane fuel cell powered systems.

  9. Fluoride-Salt-Cooled High-Temperature Reactor (FHR) with Silicon-Carbide-Matrix Coated-Particle Fuel

    SciTech Connect (OSTI)

    Forsberg, C. W.; Terrani, Kurt A; Snead, Lance Lewis; Katoh, Yutai

    2012-01-01

    The FHR is a new reactor concept that uses coated-particle fuel and a low-pressure liquid-salt coolant. Its neutronics are similar to a high-temperature gas-cooled reactor (HTGR). The power density is 5 to 10 times higher because of the superior cooling properties of liquids versus gases. The leading candidate coolant salt is a mixture of {sup 7}LiF and BeF{sub 2} (FLiBe) possessing a boiling point above 1300 C and the figure of merit {rho}C{sub p} (volumetric heat capacity) for the salt slightly superior to water. Studies are underway to define a near-term base-line concept while understanding longer-term options. Near-term options use graphite-matrix coated-particle fuel where the graphite is both a structural component and the primary neutron moderator. It is the same basic fuel used in HTGRs. The fuel can take several geometric forms with a pebble bed being the leading contender. Recent work on silicon-carbide-matrix (SiCm) coated-particle fuel may create a second longer-term fuel option. SiCm coated-particle fuels are currently being investigated for use in light-water reactors. The replacement of the graphite matrix with a SiCm creates a new family of fuels. The first motivation behind the effort is to take advantage of the superior radiation resistance of SiC compared to graphite in order to provide a stable matrix for hosting coated fuel particles. The second motivation is a much more rugged fuel under accident, repository, and other conditions.

  10. Cumulative fission yields of short-lived isotopes under natural-abundance-boron-carbide-moderated neutron spectrum

    SciTech Connect (OSTI)

    Finn, Erin C.; Metz, Lori A.; Greenwood, Lawrence R.; Pierson, Bruce; Wittman, Richard S.; Friese, Judah I.; Kephart, Rosara F.

    2015-04-09

    The availability of gamma spectroscopy data on samples containing mixed fission products at short times after irradiation is limited. Due to this limitation, data interpretation methods for gamma spectra of mixed fission product samples, where the individual fission products have not been chemically isolated from interferences, are not well-developed. The limitation is particularly pronounced for fast pooled neutron spectra because of the lack of available fast reactors in the United States. Samples containing the actinide isotopes 233, 235, 238U, 237Np, and 239Pu individually were subjected to a 2$ pulse in the Washington State University 1 MW TRIGA reactor. To achieve a fission-energy neutron spectrum, the spectrum was tailored using a natural abundance boron carbide capsule to absorb neutrons in the thermal and epithermal region of the spectrum. Our tailored neutron spectrum is unique to the WSU reactor facility, consisting of a soft fission spectrum that contains some measurable flux in the resonance region. This results in a neutron spectrum at greater than 0.1 keV with an average energy of 70 keV, similar to fast reactor spectra and approaching that of 235U fission. Unique fission product gamma spectra were collected from 4 minutes to 1 week after fission using single-crystal high purity germanium detectors. Cumulative fission product yields measured in the current work generally agree with published fast pooled fission product yield values from ENDF/B-VII, though a bias was noted for 239Pu. The present work contributes to the compilation of energy-resolved fission product yield nuclear data for nuclear forensic purposes.

  11. Neutron Scattering Studies of Liquid on or Confined in Nano- and Mesoporous Carbons, Including Carbide-Derived Carbons

    SciTech Connect (OSTI)

    Wesolowski, David J

    2014-07-01

    This project involved the synthesis of microporous graphitic-carbon powders with subnanometer average pore size, and very narrow pore size distributions, and the use of these materials in experimental studies of pore-fluid structure and dynamics. Samples of carbide-derived carbon powder, synthesized by extraction of the metal cations from TiC by a high temperature chlorination process, followed by high temperature vacuum annealing, were prepared by Ranjan Dash and his associates at CRADA partner Y-Carbon, Inc. The resulting material had average pore sizes ranging from 5 to 8 . These powders were used in two experiments conducted by researchers involved in the Energy Frontier Research Center Directed by David J. Wesolowski at ORNL, the Fluid Interface Reactions, Structures and Transport (FIRST) Center. FIRST-funded researchers at Drexel University collaborated with scientists at the Paul Scherrer Institute, Switzerland, to measure the expansion and contraction of the microporous carbon particles during charging and discharging of supercapactor electrodes composed of these particles (Hantell et al., 2011, Electrochemistry Communications, v. 13, pp. 1221-1224.) in an electrolyte composed of tetraethylammonium tetrafluoroborate dissolved in acetonitrile. In the second experiment, researchers at Oak Ridge National Laboratory and Drexel University conducted quasielastic neutron scattering studies of the diffusional dynamics of water imbibed into the micropores of the same material (Chathoth et al., 2011, EuroPhysics Journal, v. 95, pp. 56001/1-6). These studies helped to establish the role of pores approaching the size of the solvent and dissolved ions in altering diffusional dynamics, ion transport and physical response of conducting substrates to ion desolvation and entry into subnamometer pores.

  12. Superconducting and structural properties of {delta}-MoC{sub 0.681} cubic molybdenum carbide phase

    SciTech Connect (OSTI)

    Sathish, C.I. [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan) [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng, E-mail: GUO.Yanfeng@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Wang, Xia [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan) [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Li, Jun [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan) [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Zhang, Shoubao [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Matsushita, Yoshitaka [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo-cho, Hyogo 679-5148 (Japan)] [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo-cho, Hyogo 679-5148 (Japan); Shi, Youguo; Tian, Huanfang; Yang, Huaixin; Li, Jianqi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)] [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yamaura, Kazunari, E-mail: YAMAURA.Kazunari@nims.go.jp [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan) [Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Superconducting Properties Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2012-12-15

    The superconducting and lattice properties of {delta}-MoC{sub 0.681} were studied by electromagnetic measurements, synchrotron X-ray diffraction, neutron diffraction, and electron diffraction. The superconducting properties (T{sub c}=12 K) of {delta}-MoC{sub 0.681} were well characterized by a weak coupling model. The carbon vacancies present in the host cubic structure were found to be robust, although the material was synthesized from stoichiometric carbon and Mo powder under a high-pressure of 6 GPa. A thermodynamically-stable structure with ordered vacancies did not account for the robust features of {delta}-MoC{sub 0.681} since the vacancies are unlikely to be ordered in long range in the host structure. A model based on inherent phonon instability theoretically predicted for a stoichiometric MoC phase might be responsible for the robust features of {delta}-MoC{sub 0.681}. - Graphical Abstract: The cubic molybdenum carbide shows an excellent superconductivity with robust carbon vacancies. Inherent phonon instability theoretically predicted for a stoichiometric MoC phase might be responsible for the vacancies rather than a thermodynamically-stable structure with vacancies ordering. Highlights: Black-Right-Pointing-Pointer The 12 K superconductivity is well characterized by a weakly coupling model. Black-Right-Pointing-Pointer Carbon vacancies are robust and disordered in the cubic host structure. Black-Right-Pointing-Pointer Inherent phonon instability might be responsible for the robust carbon vacancies in {delta}-MoC{sub 0.681}.

  13. Powerful, Efficient Electric Vehicle Chargers: Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric

    SciTech Connect (OSTI)

    2010-09-14

    ADEPT Project: Currently, charging the battery of an electric vehicle (EV) is a time-consuming process because chargers can only draw about as much power from the grid as a hair dryer. APEI is developing an EV charger that can draw as much power as a clothes dryer, which would drastically speed up charging time. APEI's charger uses silicon carbide (SiC)-based power transistors. These transistors control the electrical energy flowing through the charger's circuits more effectively and efficiently than traditional transistors made of straight silicon. The SiC-based transistors also require less cooling, enabling APEI to create EV chargers that are 10 times smaller than existing chargers.

  14. Hydrogenation of CO2 to methanol: Importance of metal–oxide and metal–carbide interfaces in the activation of CO2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rodriguez, José A.; Liu, Ping; Stacchiola, Dario J.; Senanayake, Sanjaya D.; White, Michael G.; Chen, Jingguang G.

    2015-09-30

    In this study, the high thermochemical stability of CO2 makes it very difficult to achieve the catalytic conversion of the molecule into alcohols or other hydrocarbon compounds, which can be used as fuels or the starting point for the generation of fine chemicals. Pure metals and bimetallic systems used for the CO2 → CH3OH conversion usually bind CO2 too weakly and, thus, show low catalytic activity. Here, we discuss a series of recent studies that illustrate the advantages of metal–oxide and metal–carbide interfaces when aiming at the conversion of CO2 into methanol. CeOx/Cu(111), Cu/CeOx/TiO2(110), and Au/CeOx/TiO2(110) exhibit an activity formore » the CO2 → CH3OH conversion that is 2–3 orders of magnitude higher than that of a benchmark Cu(111) catalyst. In the Cu–ceria and Au–ceria interfaces, the multifunctional combination of metal and oxide centers leads to complementary chemical properties that open active reaction pathways for methanol synthesis. Efficient catalysts are also generated after depositing Cu and Au on TiC(001). In these cases, strong metal–support interactions modify the electronic properties of the admetals and make them active for the binding of CO2 and its subsequent transformation into CH3OH at the metal–carbide interfaces.« less

  15. Wear Mechanism of Chemical Vapor Deposition (CVD) Carbide Insert in Orthogonal Cutting Ti-6Al-4V ELI at High Cutting Speed

    SciTech Connect (OSTI)

    Gusri, A. I.; Che Hassan, C. H.; Jaharah, A. G.

    2011-01-17

    The performance of Chemical Vapor Deposition (CVD) carbide insert with ISO designation of CCMT 12 04 04 LF, when turning titanium alloys was investigated. There were four layers of coating materials for this insert i.e.TiN-Al2O3-TiCN-TiN. The insert performance was evaluated based on the insert's edge resistant towards the machining parameters used at high cutting speed range of machining Ti-6Al-4V ELI. Detailed study on the wear mechanism at the cutting edge of CVD carbide tools was carried out at cutting speed of 55-95 m/min, feed rate of 0.15-0.35 mm/rev and depth of cut of 0.10-0.20 mm. Wear mechanisms such as abrasive and adhesive were observed on the flank face. Crater wear due to diffusion was also observed on the rake race. The abrasive wear occurred more at nose radius and the fracture on tool were found at the feed rate of 0.35 mm/rev and the depth of cut of 0.20 mm. The adhesion wear takes place after the removal of the coating or coating delaminating. Therefore, adhesion or welding of titanium alloy onto the flank and rake faces demonstrates a strong bond at the workpiece-tool interface.

  16. Hydrogenation of CO2 to methanol: Importance of metal–oxide and metal–carbide interfaces in the activation of CO2

    SciTech Connect (OSTI)

    Rodriguez, José A.; Liu, Ping; Stacchiola, Dario J.; Senanayake, Sanjaya D.; White, Michael G.; Chen, Jingguang G.

    2015-09-30

    In this study, the high thermochemical stability of CO2 makes it very difficult to achieve the catalytic conversion of the molecule into alcohols or other hydrocarbon compounds, which can be used as fuels or the starting point for the generation of fine chemicals. Pure metals and bimetallic systems used for the CO2 → CH3OH conversion usually bind CO2 too weakly and, thus, show low catalytic activity. Here, we discuss a series of recent studies that illustrate the advantages of metal–oxide and metal–carbide interfaces when aiming at the conversion of CO2 into methanol. CeOx/Cu(111), Cu/CeOx/TiO2(110), and Au/CeOx/TiO2(110) exhibit an activity for the CO2 → CH3OH conversion that is 2–3 orders of magnitude higher than that of a benchmark Cu(111) catalyst. In the Cu–ceria and Au–ceria interfaces, the multifunctional combination of metal and oxide centers leads to complementary chemical properties that open active reaction pathways for methanol synthesis. Efficient catalysts are also generated after depositing Cu and Au on TiC(001). In these cases, strong metal–support interactions modify the electronic properties of the admetals and make them active for the binding of CO2 and its subsequent transformation into CH3OH at the metal–carbide interfaces.

  17. Zirconium and hafnium-catalyzed polymerization of methylenecyclopropane

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Yang, Xinmin (Somerset, NJ); Jia, Li (Evanston, IL)

    1996-01-01

    A polymer having a repeating unit of ##STR1## and a method for preparing it through Zr-catalyzed polymerization of methylenecyclopropane is disclosed.

  18. Zirconium and hafnium-catalyzed polymerization of methylenecyclopropane

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Yang, Xinmin (Somerset, NJ); Jia, Li (Evanston, IL)

    1997-01-01

    A polymer having a repeating unit of ##STR1## and a method for preparing it through Zr-catalyzed polymerization of methylenecyclopropane is disclosed.

  19. Method of Preparing Hydrous Hafnium, Cerium, or Aluminum Oxide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cerium, or aluminum oxide microspheres was invented at ORNL. The invention is a type of sol-gel process that solidifies droplets of solution as they enter into a warm environment....

  20. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    SciTech Connect (OSTI)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H.; Kim, K.

    1993-05-01

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  1. Heat Flux Calculation and Problem of Flaking of Boron Carbide Coatings on the Faraday Screen of the ICRH Antennas During Tore Supra High Power, Long Pulse Operation

    SciTech Connect (OSTI)

    Corre, Y.; Lipa, M.; Agarici, G.; Basiuk, V.; Colas, L.; Courtois, X.; Dumont, R. J.; Ekedahl, A.; Gardarein, J. L.; Klepper, C Christopher; Martin, V.; Moncada, V.; Portafaix, C.; Rigollet, F.; Tawizgant, R.; Travere, J. M.; Valliez, K.

    2011-01-01

    Reliable and repetitive high power and long pulse tokamak operation is strongly dependant of the ability to secure the Plasma Facing Components (PFCs). In Tore Supra, a network of 7 infrared (IR) video cameras is routinely used to prevent PFCs overheating and damage in selected regions. Real time feedback control and offline analysis are essential for basic protection and understanding of abnormal thermal events. One important limitation detected by the IR real time feed-back loop during high power RF operation (injected power of 9.5 MW over 26 s and 12 MW over 10 s have been achieved respectively in 2006 and 2008) is due to the interaction between fast ions which increase the power flux density and flaking of the boron carbide coatings on the Faraday screen box of the ICRH antennas. An IR-based experimental procedure is proposed in order to detect new flakes during plasma operation. The thermal response of the B4C coating is studied with and without flaking during plasma operation. The experimental heat flux deposited by fast ion losses on the Faraday screen is calculated for high (3.8 T) and low magnetic field (2 T) during high RF power operation (with fundamental hydrogen minority and second harmonic ICRH heating schemes respectively). The paper addresses both thermal science issues applied to machine protection and limitation due to fast ions issues during high RF power, long pulse operation. Safety margin to critical heat flux and number of fatigue cycles under heat load are presented in the paper.

  2. Evaluation of Neutron Irradiated Silicon Carbide and Silicon Carbide Composites

    SciTech Connect (OSTI)

    Newsome G, Snead L, Hinoki T, Katoh Y, Peters D

    2007-03-26

    The effects of fast neutron irradiation on SiC and SiC composites have been studied. The materials used were chemical vapor deposition (CVD) SiC and SiC/SiC composites reinforced with either Hi-Nicalon{trademark} Type-S, Hi-Nicalon{trademark} or Sylramic{trademark} fibers fabricated by chemical vapor infiltration. Statistically significant numbers of flexural samples were irradiated up to 4.6 x 10{sup 25} n/m{sup 2} (E>0.1 MeV) at 300, 500 and 800 C in the High Flux Isotope Reactor at Oak Ridge National Laboratory. Dimensions and weights of the flexural bars were measured before and after the neutron irradiation. Mechanical properties were evaluated by four point flexural testing. Volume increase was seen for all bend bars following neutron irradiation. Magnitude of swelling depended on irradiation temperature and material, while it was nearly independent of irradiation fluence over the fluence range studied. Flexural strength of CVD SiC increased following irradiation depending on irradiation temperature. Over the temperature range studied, no significant degradation in mechanical properties was seen for composites fabricated with Hi-Nicalon{trademark} Type-S, while composites reinforced with Hi-Nicalon{trademark} or Sylramic fibers showed significant degradation. The effects of irradiation on the Weibull failure statistics are also presented suggesting a reduction in the Weibull modulus upon irradiation. The cause of this potential reduction is not known.

  3. Union Carbides Last 20 Years in Oak Ridge

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1965 (at the start of the last 20 year period we are describing) was Dr. Clarence E. Larson. He had come to Y-12 in 1943 from California (U. of C., Davis) where he was E. O....

  4. © 2012 ATI. All Rights Reserved

    Broader source: Energy.gov (indexed) [DOE]

    2 ATI. All Rights Reserved.  11,200 employees - worldwide  $5 billion in Sales in 2012  Global presence - Operations in 18 countries  Provides customer focused specialty metals solutions * Titanium and titanium alloys * Nickel-based alloys and superalloys * Stainless steels, grain oriented electrical steel & duplex alloys * Zirconium, Hafnium and Niobium alloys * Tungsten metals & carbide cutting tools * Powdered metals * High performance forgings, castings and machining

  5. Molybdenum sulfide/carbide catalysts

    DOE Patents [OSTI]

    Alonso, Gabriel (Chihuahua, MX); Chianelli, Russell R. (El Paso, TX); Fuentes, Sergio (Ensenada, MX); Torres, Brenda (El Paso, TX)

    2007-05-29

    The present invention provides methods of synthesizing molybdenum disulfide (MoS.sub.2) and carbon-containing molybdenum disulfide (MoS.sub.2-xC.sub.x) catalysts that exhibit improved catalytic activity for hydrotreating reactions involving hydrodesulfurization, hydrodenitrogenation, and hydrogenation. The present invention also concerns the resulting catalysts. Furthermore, the invention concerns the promotion of these catalysts with Co, Ni, Fe, and/or Ru sulfides to create catalysts with greater activity, for hydrotreating reactions, than conventional catalysts such as cobalt molybdate on alumina support.

  6. PROCESS OF PREPARING URANIUM CARBIDE

    DOE Patents [OSTI]

    Miller, W.E.; Stethers, H.L.; Johnson, T.R.

    1964-03-24

    A process of preparing uranium monocarbide is de scribed. Uranium metal is dissolved in cadmium, zinc, cadmium-- zinc, or magnesium-- zinc alloy and a small quantity of alkali metal is added. Addition of stoichiometric amounts of carbon at 500 to 820 deg C then precipitates uranium monocarbide. (AEC)

  7. Influences of directionally solidified techniques and hafnium content on a nickel base high temperature alloy

    SciTech Connect (OSTI)

    Luobao, W.; Rongzhang, C.; Yuping, W.

    1984-03-01

    Two directionally solidified techniques, the power decrease (P.D.) and high rate solidification (H.R.S.) methods, are used to study the influences of the different Hf contents on the structures and properties of a nickel base high temperature alloy. When entering the alloy the Hf is mainly segregated in the interdentritic regions and gamma/gamma prime eutectic phases. After the alloy is added, there are noticeable changes in the microstructure. The amount of gamma/gamma prime eutectic phase noticeably increases. Its morphology also undergoes noticeable changes. The conditions of grain boundaries and interdentritic regions are improved. Several new types of Hf-rich microfacies also appeared. At 760 C, the endurance properties (especially the transverse properties) of the alloy noticeably rise with the increase of the Hf content. However, at 1040 C, the endurance life decreases with the increase of the Hf content. When the H.R.S. technique is used, the medium and high temperature performances of the alloy are both noticeably superior to the P.D. technique.

  8. Advanced materials for solid oxide fuel cells: Hafnium-Praseodymium-Indium Oxide System

    SciTech Connect (OSTI)

    Bates, J.L.; Griffin, C.W.; Weber, W.J.

    1988-06-01

    The HfO/sub 2/-PrO/sub 1.83/-In/sub 2/O/sub 3/ system has been studied at the Pacific Northwest Laboratory to develop alternative, highly electrically conducting oxides as electrode and interconnection materials for solid oxide fuel cells. A coprecipitation process was developed for synthesizing single-phase, mixed oxide powders necessary to fabricate powders and dense oxides. A ternary phase diagram was developed, and the phases and structures were related to electrical transport properties. Two new phases, an orthorhombic PrInO/sub 3/ and a rhombohedral Hf/sub 2/In/sub 2/O/sub 7/ phase, were identified. The highest electronic conductivity is related to the presence of a bcc, In/sub 2/O/sub 3/ solid solution (ss) containing HfO/sub 2/ and PrO/sub 1.83/. Compositions containing more than 35 mol % of the In/sub 2/O/sub 3/ ss have electrical conductivities greater than 10/sup /minus/1/ (ohm-cm)/sup /minus/1/, and the two or three phase structures that contain this phase appear to exhibit mixed electronic-ionic conduction. The high electrical conductivities and structures similar to the Y/sub 2/O/sub 3/-stabilized ZrO/sub 2/(HfO/sub 2/) electrolyte give these oxides potential for use as cathodes in solid oxide fuel cells. 21 refs.

  9. The Effect of the Presence of 2 wt% Hafnium in T-111

    SciTech Connect (OSTI)

    Barklay, Chadwick D.; Kramer, Daniel P.; Miller, Roger G.

    2006-01-20

    Tantalum alloys have been used by the U.S. Department of Energy as structural alloys for space nuclear power systems such as Radioisotopic Thermoelectric Generators (RTG) since the 1960s. Tantalum alloys are attractive for high temperature structural applications due to their high melting point, excellent formability, good thermal conductivity, good ductility (even at low temperatures), corrosion resistance, and weldability. A number of tantalum alloys have been developed over the years to increase high-temperature strength (Ta-10%W), and reduce creep strain (T-111). These tantalum alloys have demonstrated sufficient high-temperature toughness to survive prolonged exposure to the RTG's working environment. Due to the commercial unavailability of the tantalum alloy T-111, Ta-10%W is a possible candidate replacement material because of its high melting point (3037 deg. C), high elastic modulus (207 GPa), high yield, ultimate tensile strengths at both ambient and elevated temperatures, excellent ductility, and exceptional creep properties. Ta-10%W is also attractive due its commercial availability and low cost when compared to T-111. The objective of this paper is to compare and contrast Ta-10%W and T-111 for high-temperature nuclear based power conversion applications and to document research that must be conducted to fully characterize both materials.

  10. Electron-beam-evaporated thin films of hafnium dioxide for fabricating...

    Office of Scientific and Technical Information (OSTI)

    This content will become publicly available on June 17, 2016 Title: Electron-beam-evaporat... will become publicly available on June 17, 2016 Publisher's Version of Record 10.1116...

  11. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on...

  12. Silicon Carbide Derived Carbons: Experiments and Modeling

    SciTech Connect (OSTI)

    Kertesz, Miklos

    2011-02-28

    The main results of the computational modeling was: 1. Development of a new genealogical algorithm to generate vacancy clusters in diamond starting from monovacancies combined with energy criteria based on TBDFT energetics. The method revealed that for smaller vacancy clusters the energetically optimal shapes are compact but for larger sizes they tend to show graphitized regions. In fact smaller clusters of the size as small as 12 already show signatures of this ?¢????graphitization?¢????. The modeling gives firm basis for the ?¢????slit-pore?¢???? modeling of porous carbon materials and explains some of their properties. 2. We discovered small vacancy clusters and their physical characteristics that can be used to spectroscopically identify them. 3. We found low barrier pathways for vacancy migration in diamond-like materials by obtaining for the first time optimized reaction pathways.

  13. Silicon Carbide Semiconductors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stum, the Wide Band Gap device engineer who is leading the "Next Generation SiC MOSFET" development program here at GRC. Zach and his team are working on improving key device...

  14. Optically initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders; David M. (Livermore, CA)

    2011-02-22

    An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  15. Process for preparing silicon carbide foam

    DOE Patents [OSTI]

    Whinnery, LeRoy Louis (Livermore, CA); Nichols, Monte Carl (Livermore, CA); Wheeler, David Roger (Albuquerque, NM); Loy, Douglas Anson (Albuquerque, NM)

    1997-01-01

    A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.

  16. Process for preparing silicon carbide foam

    DOE Patents [OSTI]

    Whinnery, L.L.; Nichols, M.C.; Wheeler, D.R.; Loy, D.A.

    1997-09-16

    A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolyzed in an inert atmosphere to form a SiC foam. 9 figs.

  17. Silicon Carbide Emitter Turn-Off Thyristor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Jun; Wang, Gangyao; Li, Jun; Huang, Alex Q.; Melcher, Jerry; Atcitty, Stan

    2008-01-01

    A novel MOS-conmore » trolled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  A / cm 2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  W / cm 2 conduction and the 100  W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.« less

  18. Harsh Environment Silicon Carbide Sensor Technology Geothermal...

    Open Energy Info (EERE)

    Cost Share 456,071.00 Total Project Cost 2,280,352.00 Principal Investigator(s) Albert P. Pisano, Professor and Department Chair, Department of Mechanical Engineering,...

  19. Off-axis silicon carbide substrates

    DOE Patents [OSTI]

    Edgar, James; Dudley, Michael; Kuball, Martin; Zhang, Yi; Wang, Guan; Chen, Hui; Zhang, Yu

    2014-09-02

    A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.

  20. Carbon p electron ferromagnetism in silicon carbide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Yutian; Liu, Yu; Wang, Gang; Anwand, Wolfgang; Jenkins, Catherine A.; Arenholz, Elke; Munnik, Frans; Gordan, Ovidiu D.; Salvan, Georgeta; Zahn, Dietrich R. T.; et al

    2015-03-11

    Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

  1. Hybrid nuclear reactor grey rod to obtain required reactivity worth

    DOE Patents [OSTI]

    Miller, John V. (Munhall, PA); Carlson, William R. (Scott Township, Allegheny County, PA); Yarbrough, Michael B. (Hempfield Township, Westmoreland County, PA)

    1991-01-01

    Hybrid nuclear reactor grey rods are described, wherein geometric combinations of relatively weak neutron absorber materials such as stainless steel, zirconium or INCONEL, and relatively strong neutron absorber materials, such as hafnium, silver-indium cadmium and boron carbide, are used to obtain the reactivity worths required to reach zero boron change load follow. One embodiment includes a grey rod which has combinations of weak and strong neutron absorber pellets in a stainless steel cladding. The respective pellets can be of differing heights. A second embodiment includes a grey rod with a relatively thick stainless steel cladding receiving relatively strong neutron absorber pellets only. A third embodiment includes annular relatively weak netron absorber pellets with a smaller diameter pellet of relatively strong absorber material contained within the aperture of each relatively weak absorber pellet. The fourth embodiment includes pellets made of a homogeneous alloy of hafnium and a relatively weak absorber material, with the percentage of hafnium chosen to obtain the desired reactivity worth.

  2. A look back at Union Carbides FIRST 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in developing metal rolling techniques. "Because of Y-12's vast reservoir of industrial skills, many problems in areas such as metallurgy, special fabrications, chemistry,...

  3. A look back at Union Carbides 20 Years in Nuclear Energy [The...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of the intervening years. The publication covers all sites in Oak Ridge and to give a fuller picture of the total scope of accomplishments, I will include the Milestones from each...

  4. Union Carbides 20 years in nuclear energy, part 2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    large-scale precision machining of beryllium began. "1953 - Additional uranium casting facilities and another uranium machining shop were installed and completed by fall. A...

  5. A look back at Union Carbides FIRST 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    large-scale precision machining of beryllium began. "1953 - Additional uranium casting facilities and another uranium machining shop were installed and completed by fall. A...

  6. A look back at Union Carbides FIRST 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    are the main research building, a power and utilities building, and an ores and minerals development laboratory. "FROM PRODUCTION TO RESEARCH - Uranium salts find their way into...

  7. Union Carbides Last 20 Years in Oak Ridge ? part 2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    or the earth with each other's atmospheres. 1969. AEC Headquarters in Washington and ORO announced the start of the "Toll Enrichment" program using its K-25, Portsmouth, and...

  8. A look back at Union Carbides first 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    propulsion reactors, the 'package' reactors for power at remote locations, and swimming pool research reactors. Advanced power-producing reactors now being developed at ORNL...

  9. Union Carbides Last 20 Years in Oak Ridge ? part 4

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    whether and to what degree the program impacted employee health, and the program's impacts on the environment. The Mercury Task Force physically rounded up all the Y-12...

  10. NUCLEOSYNTHETIC TUNGSTEN ISOTOPE ANOMALIES IN ACID LEACHATES OF THE MURCHISON CHONDRITE: IMPLICATIONS FOR HAFNIUM-TUNGSTEN CHRONOMETRY

    SciTech Connect (OSTI)

    Burkhardt, Christoph; Wieler, Rainer; Kleine, Thorsten; Dauphas, Nicolas

    2012-07-01

    Progressive dissolution of the Murchison carbonaceous chondrite with acids of increasing strengths reveals large internal W isotope variations that reflect a heterogeneous distribution of s- and r-process W isotopes among the components of primitive chondrites. At least two distinct carriers of nucleosynthetic W isotope anomalies must be present, which were produced in different nucleosynthetic environments. The co-variation of {sup 182}W/{sup 184}W and {sup 183}W/{sup 184}W in the leachates follows a linear trend that is consistent with a mixing line between terrestrial W and a presumed s-process-enriched component. The composition of the s-enriched component agrees reasonably well with that predicted by the stellar model of s-process nucleosynthesis. The co-variation of {sup 182}W/{sup 184}W and {sup 183}W/{sup 184}W in the leachates provides a means for correcting the measured {sup 182}W/{sup 184}W and {sup 182}W/{sup 183}W of Ca-Al-rich inclusions (CAI) for nucleosynthetic anomalies using the isotopic variations in {sup 183}W/{sup 184}W. This new correction procedure is different from that used previously, and results in a downward shift of the initial {epsilon}{sup 182}W of CAI to -3.51 {+-} 0.10 (where {epsilon}{sup 182}W is the variation in 0.01% of the {sup 182}W/{sup 183}W ratio relative to Earth's mantle). This revision leads to Hf-W model ages of core formation in iron meteorite parent bodies that are {approx}2 Myr younger than previously calculated. The revised Hf-W model ages are consistent with CAI being the oldest solids formed in the solar system, and indicate that core formation in some planetesimals occurred within {approx}2 Myr of the beginning of the solar system.

  11. ZIRCONIUMHAFNIUM ISOTOPE EVIDENCE FROM METEORITES FOR THE DECOUPLED SYNTHESIS OF LIGHT AND HEAVY NEUTRON-RICH NUCLEI

    SciTech Connect (OSTI)

    Akram, W.; Schnbchler, M.; Sprung, P.; Vogel, N.

    2013-11-10

    Recent work based on analyses of meteorite and terrestrial whole-rock samples showed that the r- and s- process isotopes of Hf were homogeneously distributed throughout the inner solar system. We report new Hf isotope data for Calcium-Aluminum-rich inclusions (CAIs) of the CV3 carbonaceous chondrite Allende, and novel high-precision Zr isotope data for these CAIs and three carbonaceous chondrites (CM, CO, CK). Our Zr data reveal enrichments in the neutron-rich isotope {sup 96}Zr (?1? in {sup 96}Zr/{sup 90}Zr) for bulk chondrites and CAIs (?2?). Potential isotope effects due to incomplete sample dissolution, galactic and cosmic ray spallation, and the nuclear field shift are assessed and excluded, leading to the conclusion that the {sup 96}Zr isotope variations are of nucleosynthetic origin. The {sup 96}Zr enrichments are coupled with {sup 50}Ti excesses suggesting that both nuclides were produced in the same astrophysical environment. The same CAIs also exhibit deficits in r-process Hf isotopes, which provides strong evidence for a decoupling between the nucleosynthetic processes that produce the light (A ? 130) and heavy (A > 130) neutron-rich isotopes. We propose that the light neutron-capture isotopes largely formed in Type II supernovae (SNeII) with higher mass progenitors than the supernovae that produced the heavy r-process isotopes. In the context of our model, the light isotopes (e.g. {sup 96}Zr) are predominantly synthesized via charged-particle reactions in a high entropy wind environment, in which Hf isotopes are not produced. Collectively, our data indicates that CAIs sampled an excess of materials produced in a normal mass (12-25 M{sub ?}) SNII.

  12. Method for locating metallic nitride inclusions in metallic alloy ingots

    DOE Patents [OSTI]

    White, Jack C. (Albany, OR); Traut, Davis E. (Corvallis, OR); Oden, Laurance L. (Albany, OR); Schmitt, Roman A. (Corvallis, OR)

    1992-01-01

    A method of determining the location and history of metallic nitride and/or oxynitride inclusions in metallic melts. The method includes the steps of labeling metallic nitride and/or oxynitride inclusions by making a coreduced metallic-hafnium sponge from a mixture of hafnium chloride and the chloride of a metal, reducing the mixed chlorides with magnesium, nitriding the hafnium-labeled metallic-hafnium sponge, and seeding the sponge to be melted with hafnium-labeled nitride inclusions. The ingots are neutron activated and the hafnium is located by radiometric means. Hafnium possesses exactly the proper metallurgical and radiochemical properties for this use.

  13. Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation

    Broader source: Energy.gov [DOE]

    Project objectives: Develop advanced sensor technology for the direct monitoring of geothermal reservoirs. Engineer sensors to survive and operate in H2O pressures up to 220 bar and temperatures as high as 374o C.

  14. Silicon Carbide (SiC) Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for managing the flow of current for virtually everything ... For power generation sources like wind and solar energy, ... To get there, production costs need to go down while ...

  15. Preparation and uses of amorphous boron carbide coated substrates

    DOE Patents [OSTI]

    Riley, Robert E. (Los Alamos, NM); Newkirk, Lawrence R. (Los Alamos, NM); Valencia, Flavio A. (Santa Fe, NM)

    1981-09-01

    Cloth is coated at a temperature below about 1000.degree. C. with amorphous boron-carbon deposits in a process which provides a substantially uniform coating on all the filaments making up each yarn fiber bundle of the cloth. The coated cloths can be used in the as-deposited condition for example as wear surfaces where high hardness values are needed; or multiple layers of coated cloths can be hot-pressed to form billets useful for example in fusion reactor wall armor. Also provided is a method of controlling the atom ratio of B:C of boron-carbon deposits onto any of a variety of substrates, including cloths.

  16. Irradiation creep of nano-powder sintered silicon carbide at...

    Office of Scientific and Technical Information (OSTI)

    Resource Type: Journal Article Resource Relation: Journal Name: Journal of Nuclear Materials; Journal Volume: 455; Journal Issue: 1-3; Conference: 16. International...

  17. Advanced Triso fuels with zirconium carbide for high temperature reactors

    SciTech Connect (OSTI)

    Lobach, Sergiy Y.; Knight, Travis W.; Jacob, Norman P.; Athon, Clifton E.

    2007-07-01

    There are several options for the advanced TRISO fuel: one is primarily replacement SiC with ZrC and the other is a concept involving a thin ZrC layer coating on the kernel, which is then enclosed in usual TRISO coatings. An effort at modeling, fabrication and testing of an advanced TRISO coated UO{sub 2} fuel particle design incorporating an added layer of ZrC over the fuel kernel is under investigation. The objectives of the coated particle development program are to define the essentials of a production route for the manufacture of kernels and coated particles and to identify the important process parameters that determine the particle properties. Still, the integrity of the ZrC coating is important, but not the main goal. The primary purpose of a ZrC coating examination in this study is to determine hot it serves as an oxygen getter to limit CO production and hence pressure buildup that would stress coatings leading to failure. This additional ZrC coating also aids in retaining fission products within the kernel, and carbon diffusion in the particle is limited hence kernel migration rates are slowed. The combined result being that failure rates of coated particles should decrease. (authors)

  18. Union Carbide's 20 years in nuclear energy, part 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nuclear weapon components." The text of the document continues to highlight Y-12"s history and missions through 1962. I have reproduced the Y-12 portion of publication here...

  19. Silicon Carbide Applications in Power Electronics | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    transition from Si-based chips to SiC-based chips." The announcement of a state-funded packaging facility in Utica, NY will also help to bring SiC to market faster. "We are...

  20. Optically-initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders, David M. (Livermore, CA)

    2012-02-28

    An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  1. Silicon carbide whisker-zirconia reinforced mullite and alumina ceramics

    DOE Patents [OSTI]

    Becher, Paul F. (Oak Ridge, TN); Tiegs, Terry N. (Lenoir City, TN)

    1987-01-01

    The flexural strength and/or fracture toughness of SiC whisker-reinforced composites utilizing mullite or alumina as the matrix material for the composite are increased by the addition of zirconia in a monoclinic or tetragonal phase to the matrix. The zirconia addition also provides for a lower hot-pressing temperature and increases the flexural strength and/or fracture toughness of the SiC whisker-reinforced composites over SiC whisker-reinforced composites of the similar matrix materials reinforced with similar concentrations of SiC whiskers.

  2. Silicon carbide whisker reinforced composites and method for making same

    DOE Patents [OSTI]

    Wei, G.C.

    1984-02-09

    The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties, especially increased fracture toughness. In the formation of these ceramic composites, the single-crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al/sub 2/O/sub 3/, mullite, or B/sub 4/C. The mixtures which contain a homogeneous dispersion of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600 to 1950/sup 0/C with pressing times varying from about 0.75 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MPa.m/sup 1/2/ which represents as much as a two-fold increase over that of the matrix material.

  3. Nanostructured tungsten carbide/cobalt alloys: Processing and properties

    SciTech Connect (OSTI)

    Wu, Li

    1993-12-31

    This research represents an extension of previous work on the synthesis and processing of nanostructured WC/Co alloys. The earlier work resulted in a novel thermochemical process for making nanostructured WC/Co powders (3-30 wt% Co), which involved the reductive decomposition and gas phase carburization of homogeneous precursor powders, prepared by spray drying aqueous solution mixtures of W and Co salts. A shortcoming of the process was the formation of a relatively large amount of uncombined carbon during gas phase carburization using pre CO. AnOtherr unsolved problem was the rapid coarsening of WC particles during liquid phase sintering, making it difficult to achieve the desired nanostructures in the fully consolidated materials. In the present work, both problems have been addressed and successfully overcome. Carburization in CO/H{sub 2} gas mixtures has been shown to be superior to carburization in pure CO, in that it avoids the formation of excess carbon without sacrificing the desirable high carburization rate. Another advantage is the finer WC grain size achieved, because of the shorter reaction time at relatively low temperatures, 650-750{degrees}C. Othe carbon source gases, such as CH{sub 4}/H{sub 2} and C{sub 2}H{sub 4}/H{sub 2} gas mixtures, cannot produce tungsten monocarbide at such low temperatures. Thus, carburization in CO/H{sub 2} gas mixtures appears to be optimal for synthesizing nanostructured WC/Co powders. As to liquid phase sintering of powder compacts, it has been demonstrated that mechanical mixing of a small amount of VC powder with the nanograined WC/Co powder inhibits grain growth. A striking result was the linear increase in hardness of WC/7 wt% Co with the amount of VC added, at least up to the solubility limit (about 10 wt%) of VC in liquid cobalt at the sintering temperature. Preliminary work has also demonstrated the feasibility of plasma spraying low-density nanostructured powders to produce dense, wear resistant coatings.

  4. High temperature Hexoloy{trademark} SX silicon carbide. Final report

    SciTech Connect (OSTI)

    Srinivasan, G.V.; Lau, S.K.; Storm, R.S.

    1994-09-01

    HEXOLOY{reg_sign} SX-SiC, fabricated with Y and Al containing compounds as sintering aids, has been shown to possess significantly improved strength and toughness over HEXOLOY{reg_sign}SA-SiC. This study was undertaken to establish and benchmark the complete mechanical property database of a first generation material, followed by a process optimization task to further improve the properties. Mechanical characterization on the first generation material indicated that silicon-rich pools, presumably formed as a reaction product during sintering, controlled the strength from room temperature to 1,232 C. At 1,370 C in air, the material was failing due to a glass-phase formation at the surface. This glass-phase formation was attributed to the reaction of yttrium aluminates, which exist as a second phase in the material, with the ambient. This process was determined to be a time-dependent one that leads to slow crack growth. Fatigue experiments clearly indicated that the slow crack growth driven by the reaction occurred only at temperatures >1,300 C, above the melting point of the glass phase. Process optimization tasks conducted included the selection of the best SiC powder source, studies on mixing/milling conditions for SiC powder with the sintering aids, and a designed experiment involving a range of sintering and post-treatment conditions. The optimization study conducted on the densification variables indicated that lower sintering temperatures and higher post-treatment pressures reduce the Si-rich pool formation, thereby improving the room-temperature strength. In addition, it was also determined that furnacing configuration and atmosphere were critical in controlling the Si-rich formation.

  5. Decoding the message from meteoritic stardust silicon carbide grains

    SciTech Connect (OSTI)

    Lewis, Karen M.; Lugaro, Maria; Gibson, Brad K.; Pilkington, Kate

    2014-05-02

    SiC mainstream grains are presolar grains believed to form in the envelopes of carbon rich asymptotic giant branch (AGB) stars with masses between 1.5 and 3 solar masses. These grains represent a conundrum as the {sup 29}Si and {sup 30}Si abundances indicate that they formed in stars of super-solar metallicity, before the solar system formed. To shed light on this problem, we use silicon isotopic abundances to derive an age-metallicity relation for the stars believed to have produced the SiC mainstream grains. For 2732 mainstream SiC grains listed in the Presolar Grain Database, we use the {sup 29}Si abundances with the latest galactic chemical evolution (GCE) models to derive [Fe/H], and {sup 30}Si abundances along with the models of Zinner et al. (2006) to determine an approximate birth age for the parent AGB star. Comparing our age-metallicity relation with observational relationships derived for nearby stars, we find that the spread of [Fe/H] is in agreement, but the mean [Fe/H] in our relation is higher by 0.2 dex. We propose that this difference is because stars with higher [Fe/H] produce more dust and thus are over-represented in our age metallicity diagram, a finding consistent with previous published works. This result offers a solution for the long-standing problem of silicon in Stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modelling of dust condensation in stellar winds as a function of the metallicity.

  6. Silicon Carbide (SiC) MOSFET | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    months to fabricate a SiC power device, so cracking the MOSFET code was far from straightforward. They had to break the process down step by step and ingredient by ingredient to...

  7. A brief history of the Biology Complex, part 2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Buildings 9733-1 and 9733-2 and was asked to join the nation-wide effort to find a method for freeing zirconium from its hafnium impurity. Removing the hafnium was necessary to...

  8. Microsoft Word - FR Notice - DOE CMS RFI 02-03-2016 FINAL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... hafnium, helium, indium, lithium, magnesium, manganese, molybdenum, nickel, rhenium, selenium, silicon, tantalum, tellurium, tungsten, vanadium, and zirconium Technologies and ...

  9. High rate buffer layer for IBAD MgO coated conductors

    DOE Patents [OSTI]

    Foltyn, Stephen R. (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); Arendt, Paul N. (Los Alamos, NM)

    2007-08-21

    Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

  10. Decomposition pathways of C2 oxygenates on Rh-modified tungsten carbide surfaces

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kelly, Thomas G.; Ren, Hui; Chen, Jingguang G.

    2015-03-27

    Ethanol decomposition on tungsten monocarbide (WC) and Rh-modified WC was investigated using ultrahigh vacuum (UHV) surface science experiments and density functional theory (DFT) calculations. DFT calculations indicated that the binding energies of ethanol and its decomposition intermediates on WC(0001) were modified by Rh, with Rh/WC(0001) showing similar values to those on Rh(111). Through temperature-programmed desorption (TPD) experiments on polycrystalline WC and Rh-modified WC, it was shown that the selectivity for ethanol decomposition was different on these surfaces. On WC, the C-O bond of ethanol was preferentially broken to produce ethylene; on Rh-modified WC, the C-C bond was broken to producemore » carbon monoxide and methane. In addition, high-resolution electron energy loss spectroscopy (HREELS) was used to determine likely surface intermediates. On Rh-modified WC, ethanol first formed ethoxy through O-H scission, then reacted through an aldehyde intermediate to form the C1 products.« less

  11. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    SciTech Connect (OSTI)

    Min, Tjun Kit; Yoon, Tiem Leong; Lim, Thong Leng

    2015-04-24

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  12. Method for improving the toughness of silicon carbide-based ceramics

    DOE Patents [OSTI]

    Tein, T.Y.; Hilmas, G.E.

    1996-12-03

    Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.

  13. Decomposition pathways of C2 oxygenates on Rh-modified tungsten carbide surfaces

    SciTech Connect (OSTI)

    Kelly, Thomas G.; Ren, Hui; Chen, Jingguang G.

    2015-03-27

    Ethanol decomposition on tungsten monocarbide (WC) and Rh-modified WC was investigated using ultrahigh vacuum (UHV) surface science experiments and density functional theory (DFT) calculations. DFT calculations indicated that the binding energies of ethanol and its decomposition intermediates on WC(0001) were modified by Rh, with Rh/WC(0001) showing similar values to those on Rh(111). Through temperature-programmed desorption (TPD) experiments on polycrystalline WC and Rh-modified WC, it was shown that the selectivity for ethanol decomposition was different on these surfaces. On WC, the C-O bond of ethanol was preferentially broken to produce ethylene; on Rh-modified WC, the C-C bond was broken to produce carbon monoxide and methane. In addition, high-resolution electron energy loss spectroscopy (HREELS) was used to determine likely surface intermediates. On Rh-modified WC, ethanol first formed ethoxy through O-H scission, then reacted through an aldehyde intermediate to form the C1 products.

  14. Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent

    DOE Patents [OSTI]

    Lundberg, Lynn B. (Los Alamos, NM)

    1982-01-01

    A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.

  15. Method for improving the toughness of silicon carbide-based ceramics

    DOE Patents [OSTI]

    Tein, Tseng-Ying; Hilmas, Gregory E.

    1996-01-01

    Method of improving the toughness of SiC-based ceramics. SiC, , AlN, Al.sub.2 O.sub.3 and optionally .alpha.-Si.sub.3 N.sub.4 are hot pressed to form a material which includes AlN polytypoids within its structure.

  16. Silicon carbide whisker reinforced ceramic composites and method for making same

    DOE Patents [OSTI]

    Wei, G.C.

    1989-01-24

    The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al{sub 2}O{sub 3}, mullite, or B{sub 4}C. The mixtures which contain a homogeneous dispersion of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1,600 to 1,950 C with pressing times varying from about 0.75 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness which represents as much as a two-fold increase over that of the matrix material.

  17. Silicon carbide whisker reinforced ceramic composites and method for making same

    DOE Patents [OSTI]

    Wei, George C. [Oak Ridge, TN

    1989-01-24

    The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al.sub.2 O.sub.3, mullite, or B.sub.4 C. The mixtures which contain a homogeneous disperson of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600.degree. to 1950.degree. C. with pressing times varying from about 0.75 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MP.am.sup.1/2 which represents as much as a two-fold increase over that of the matrix material.

  18. Silicon carbide whisker reinforced ceramic composites and method for making same

    DOE Patents [OSTI]

    Wei, George C. (Oak Ridge, TN)

    1993-01-01

    The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al.sub.2 O.sub.3, mullite, or B.sub.4 C. The mixtures which contain a homogeneous disperson of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600.degree. to 1950.degree. C. with pressing times varying from about 0.075 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MPa.m.sup.1/2 which represents as much as a two-fold increase over that of the matrix material.

  19. Silicon carbide whisker reinforced ceramic composites and method for making same

    DOE Patents [OSTI]

    Wei, George C.

    1993-11-16

    The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al.sub.2 O.sub.3, mullite, or B.sub.4 C. The mixtures which contain a homogeneous disperson of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600.degree. to 1950.degree. C. with pressing times varying from about 0.075 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MPa.m.sup.1/2 which represents as much as a two-fold increase over that of the matrix material.

  20. Silicon carbide whisker reinforced ceramic composites and method for making same

    DOE Patents [OSTI]

    Wei, George C. (Oak Ridge, TN)

    1985-01-01

    The present invention is directed to the fabrication of ceramic composites which possess improved mechanical properties especially increased fracture toughness. In the formation of these ceramic composites, the single crystal SiC whiskers are mixed with fine ceramic powders of a ceramic material such as Al.sub.2 O.sub.3, mullite, or B.sub.4 C. The mixtures which contain a homogeneous dispersion of the SiC whiskers are hot pressed at pressures in a range of about 28 to 70 MPa and temperatures in the range of about 1600.degree. to 1950.degree. C. with pressing times varying from about 0.75 to 2.5 hours. The resulting ceramic composites show an increase in fracture toughness of up to about 9 MPa.m.sup.1/2 which represents as much as a two-fold increase over that of the matrix material.

  1. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits

    SciTech Connect (OSTI)

    2009-03-01

    This factsheet describes a research project whose goal is to develop and produce in quantity novel superhard and ultratough thermally stable polycrystalline (TSP) diamond/SiC nanocomposites reinforced with SiC/C nanofibers for drill-bit applications and multiple industrial functions.

  2. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

    DOE Patents [OSTI]

    Sullivan, James S.; Hawkins, Steven A.

    2012-09-04

    An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

  3. Coprocessed nuclear fuels containing (U, Pu) values as oxides, carbides or carbonitrides

    DOE Patents [OSTI]

    Lloyd, M.H.

    1981-01-09

    Method for direct coprocessing of nuclear fuels derived from a product stream of fuels reprocessing facility containing uranium, plutonium, and fission product values comprising nitrate stabilization of said stream vacuum concentration to remove water and nitrates, neutralization to form an acid deficient feed solution for the internal gelation mode of sol-gel technology, green spherule formation, recovery and treatment for loading into a fuel element by vibra packed or pellet formation technologies.

  4. Coprocessed nuclear fuels containing (U, Pu) values as oxides, carbides or carbonitrides

    DOE Patents [OSTI]

    Lloyd, Milton H. (Oak Ridge, TN)

    1983-01-01

    Method for direct coprocessing of nuclear fuels derived from a product stream of a fuels reprocessing facility containing uranium, plutonium, and fission product values comprising nitrate stabilization of said stream vacuum concentration to remove water and nitrates, neutralization to form an acid deficient feed solution for the internal gelation mode of sol-gel technology, green spherule formation, recovery and treatment for loading into a fuel element by vibra packed or pellet formation technologies.

  5. Sandia National Laboratories: News: Publications: Lab News

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    made new alloy compositions, including nickel titanium platinum, nickel titanium palladium, and nickel titanium hafnium, and filed technical advances for those compositions, a...

  6. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Filter Results Filter by Subject aging (1) condensed matter physics, superconductivity and superfluidity (1) deformation (1) fatigue (1) ferroelectric materials (1) hafnium oxides ...

  7. Ductile aluminide alloys for high temperature applications

    DOE Patents [OSTI]

    Liu, Chain T. (Oak Ridge, TN); Stiegler, James O. (Lenoir City, TN)

    1986-01-01

    Improved Ni.sub.3 Al alloys are provided by inclusion of boron, hafnium or zirconium, and in some species, iron.

  8. Ductile aluminide alloys for high temperature applications

    DOE Patents [OSTI]

    Liu, C.T.; Stiegler, J.O.

    1983-12-21

    Improved Ni/sub 3/Al alloys are provided by inclusion of boron, hafnium or zirconium, and in some species, iron.

  9. Band alignment and interfacial structure of ZnO/Si heterojunction...

    Office of Scientific and Technical Information (OSTI)

    Subject: 36 MATERIALS SCIENCE; ALUMINIUM OXIDES; HAFNIUM OXIDES; HETEROJUNCTIONS; LAYERS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES Word Cloud More Like This Full Text Journal ...

  10. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide ...

  11. Sandia National Labs: PCNSC: Departments: Radiation-Solid Interactions: IBA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Table (HTML): Hafnium Hafnium Symbol: Hf Atomic Number: 72 Atomic Weight (Average): 196.9666 Mass (amu) 173.940065 175.941420 176.943233 177.943710 178.945827 179.946561 Abundance 0.16000 5.20000 18.60000 27.10000 13.74000 35.2

  12. Radioisotopic heat source

    DOE Patents [OSTI]

    Jones, G.J.; Selle, J.E.; Teaney, P.E.

    1975-09-30

    Disclosed is a radioisotopic heat source and method for a long life electrical generator. The source includes plutonium dioxide shards and yttrium or hafnium in a container of tantalum-tungsten-hafnium alloy, all being in a nickel alloy outer container, and subjected to heat treatment of from about 1570$sup 0$F to about 1720$sup 0$F for about one h. (auth)

  13. EIS-0132: Remedial Actions at the Former Union Carbide Corp. Uranium Mill Sites, Rifle, Garfield County, Colorado

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy developed this statement to evaluate and compare the environmental impacts of remediating the residual radioactive materials left at the inactive uranium tailing sites in Rifle, Colorado.

  14. Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride carbide and carbonitride

    DOE Patents [OSTI]

    Wong, M.S.; Li, D.; Chung, Y.W.; Sproul, W.D.; Xi Chu; Barnett, S.A.

    1998-03-10

    A composite material having high hardness comprises a carbon nitrogen compound, such as CN{sub x} where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN{sub x}. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45--55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating. 10 figs.

  15. Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride, carbide and carbonitride

    DOE Patents [OSTI]

    Wong, M.S.; Li, D.; Chung, Y.W.; Sproul, W.D.; Chu, X.; Barnett, S.A.

    1998-07-07

    A composite material having high hardness comprises a carbon nitrogen compound, such as CN{sub x} where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN{sub x}. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45--55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating. 10 figs.

  16. Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride carbide and carbonitride

    DOE Patents [OSTI]

    Wong, Ming-Show (Northbrook, IL); Li, Dong (Evanston, IL); Chung, Yin-Wah (Wilmette, IL); Sproul, William D. (Palantine, IL); Chu, Xi (Evanston, IL); Barnett, Scott A. (Evanston, IL)

    1998-01-01

    A composite material having high hardness comprises a carbon nitrogen compound, such as CN.sub.x where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN.sub.x. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45-55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating.

  17. Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride, carbide and carbonitride

    DOE Patents [OSTI]

    Wong, Ming-Show (Northbrook, IL); Li, Dong (Evanston, IL); Chung, Yip-Wah (Wilmette, IL); Sproul, William D. (Palantine, IL); Chu, Xi (Evanston, IL); Barnett, Scott A. (Evanston, IL)

    1998-01-01

    A composite material having high hardness comprises a carbon nitrogen compound, such as CN.sub.x where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN.sub.x. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45-55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating.

  18. Engineering scale development of the Vapor-Liquid-Solid (VLS) process for the production of silicon carbide fibrils

    SciTech Connect (OSTI)

    Hollar, W.E. Jr.; Mills, W.H.

    1993-09-01

    Vapor-liquid-solid (VLS)SiC fibrils are used as reinforcement in ceramic matrix composites (CMC). A program has been completed for determining process scaleup parameters and to produce material for evaluation in a CMC. The scaleup is necessary to lower production cost and increase material availability. Scaleup parameters were evaluated in a reactor with a vertical dimension twice that of the LANL reactor. Results indicate that the scaleup will be possible. Feasibility of recycling process gas was demonstrated and the impact of postprocessing on yields determined.

  19. Engineering scale development of the vapor-liquid-solid (VLS) process for the production of silicon carbide fibrils. Phase 2

    SciTech Connect (OSTI)

    Ohnsorg, R.W.; Hollar, W.E. Jr.; Lau, S.K.; Ko, F.K.; Schatz, K.

    1995-04-01

    As reinforcements for composites, VLS SiC fibrils have attractive mechanical properties including high-strength, high modulus, and excellent creep resistance. To make use of their excellent mechanical properties in a composite, a significant volume fraction (>10%) of aligned, long fibrils (>2 mm) needs to be consolidated in the ceramic matrix. The fibrils must be processed into an assembly that will allow for composite fabrication while maintaining fibril alignment and length. With Advanced Product Development (APD) as the yam fabrication subcontractor, Carborundum investigated several approaches to achieve this goaL including traditional yam-forming processes such as carding and air-vortex spinning and nontraditional processes such as tape forming and wet casting. Carborundum additionally performed an economic analysis for producing 500 and 10,000 pounds of SiC fibrils annually using both conservative and more aggressive processing parameters. With the aggressive approach, the projected costs for SiC fibril production for 500 and 10,000 pounds per year are $1,340/pound and $340/pound, respectively.

  20. Boron carbide coatings for neutron detection probed by x-rays, ions, and neutrons to determine thin film quality

    SciTech Connect (OSTI)

    Nowak, G. Strmer, M.; Horstmann, C.; Kampmann, R.; Hche, D.; Lorenz, U.; Mller, M.; Schreyer, A.; Becker, H.-W.; Haese-Seiller, M.; Moulin, J.-F.; Pomm, M.; Randau, C.; Hall-Wilton, R.

    2015-01-21

    Due to the present shortage of {sup 3}He and the associated tremendous increase of its price, the supply of large neutron detection systems with {sup 3}He becomes unaffordable. Alternative neutron detection concepts, therefore, have been invented based on solid {sup 10}B converters. These concepts require development in thin film deposition technique regarding high adhesion, thickness uniformity and chemical purity of the converter coating on large area substrates. We report on the sputter deposition of highly uniform large-area {sup 10}B{sub 4}C coatings of up to 2??m thickness with a thickness deviation below 4% using the Helmholtz-Zentrum Geesthacht large area sputtering system. The {sup 10}B{sub 4}C coatings are x-ray amorphous and highly adhesive to the substrate. Material analysis by means of X-ray-Photoelectron Spectroscopy, Secondary-Ion-Mass-Spectrometry, and Rutherford-Back-Scattering (RBS) revealed low impurities concentration in the coatings. The isotope composition determined by Secondary-Ion-Mass-Spectrometry, RBS, and inelastic nuclear reaction analysis of the converter coatings evidences almost identical {sup 10}B isotope contents in the sputter target and in the deposited coating. Neutron conversion and detection test measurements with variable irradiation geometry of the converter coating demonstrate an average relative quantum efficiency ranging from 65% to 90% for cold neutrons as compared to a black {sup 3}He-monitor. Thus, these converter coatings contribute to the development of {sup 3}He-free prototype detectors based on neutron grazing incidence. Transferring the developed coating process to an industrial scale sputtering system can make alternative {sup 3}He-free converter elements available for large area neutron detection systems.

  1. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

    DOE Patents [OSTI]

    Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palto Alto, CA)

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  2. Method for forming a barrier layer

    DOE Patents [OSTI]

    Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palo Alto, CA)

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  3. Micro/nano devices fabricated from Cu-Hf thin films

    DOE Patents [OSTI]

    Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

    2013-06-04

    An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

  4. Template for Electronic Submission to ACS Journals

    Office of Scientific and Technical Information (OSTI)

    ... This fits well with the observations described in Fig. 3 and 4. We further explore the ... Trapping in Ultrathin Hafnium Oxide. IEEE Electron Device Lett. 2002, 23, 597-599. ...

  5. Composite of refractory material

    DOE Patents [OSTI]

    Holcombe, C.E.; Morrow, M.S.

    1994-07-19

    A composite refractory material composition comprises a boron carbide matrix and minor constituents of yttrium-boron-oxygen-carbon phases uniformly distributed throughout the boron carbide matrix.

  6. Composite of refractory material

    DOE Patents [OSTI]

    Holcombe, Cressie E. (Knoxville, TN); Morrow, Marvin S. (Kingston, TN)

    1994-01-01

    A composite refractory material composition comprises a boron carbide matrix and minor constituents of yttrium-boron-oxygen-carbon phases uniformly distributed throughout the boron carbide matrix.

  7. Precipitation hardening austenitic superalloys

    DOE Patents [OSTI]

    Korenko, Michael K. (Wexford, PA)

    1985-01-01

    Precipitation hardening, austenitic type superalloys are described. These alloys contain 0.5 to 1.5 weight percent silicon in combination with about 0.05 to 0.5 weight percent of a post irradiation ductility enhancing agent selected from the group of hafnium, yttrium, lanthanum and scandium, alone or in combination with each other. In addition, when hafnium or yttrium are selected, reductions in irradiation induced swelling have been noted.

  8. The carburization of transition metal molybdates (MxMoO₄, M= Cu, Ni or Co) and the generation of highly active metal/carbide catalysts for CO₂ hydrogenation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rodriguez, Jose A.; Xu, Wenqian; Ramirez, Pedro J.; Stachiola, Dario; Brito, Joaquin L.

    2015-05-06

    A new approach has been tested for the preparation of metal/Mo₂C catalysts using mixed-metal oxide molybdates as precursors. Synchrotron-based in situ time-resolved X-ray diffraction was used to study the reduction and carburization processes of Cu₃(MoO₄)₂(OH)₂, a-NiMoO₄ and CoMoO₄•nH₂O by thermal treatment under mixtures of hydrogen and methane. In all cases, the final product was β-Mo₂C and a metal phase (Cu, Ni, or Co), but the transition sequence varied with the different metals, and it could be related to the reduction potential of the Cu²⁺, Ni²⁺ and Co²⁺ cations inside each molybdate. The synthesized Cu/Mo₂C, Ni/Mo₂C and Co/Mo₂C catalysts were highlymore » active for the hydrogenation of CO₂. The metal/Mo₂C systems exhibited large variations in the selectivity towards methanol, methane and CnH₂n₊₂ (n > 2) hydrocarbons depending on the nature of the supported metal and its ability to cleave C-O bonds. Cu/Mo₂C displayed a high selectivity for CO and methanol production. Ni/Mo₂C and Co/Mo₂C were the most active catalysts for the activation and full decomposition of CO₂, showing high selectivity for the production of methane (Ni case) and CnH₂n₊₂ (n > 2) hydrocarbons (Co case).« less

  9. The carburization of transition metal molybdates (MxMoO?, M= Cu, Ni or Co) and the generation of highly active metal/carbide catalysts for CO? hydrogenation

    SciTech Connect (OSTI)

    Rodriguez, Jose A.; Xu, Wenqian; Ramirez, Pedro J.; Stachiola, Dario; Brito, Joaquin L.

    2015-05-06

    A new approach has been tested for the preparation of metal/Mo?C catalysts using mixed-metal oxide molybdates as precursors. Synchrotron-based in situ time-resolved X-ray diffraction was used to study the reduction and carburization processes of Cu?(MoO?)?(OH)?, a-NiMoO? and CoMoO?nH?O by thermal treatment under mixtures of hydrogen and methane. In all cases, the final product was ?-Mo?C and a metal phase (Cu, Ni, or Co), but the transition sequence varied with the different metals, and it could be related to the reduction potential of the Cu?, Ni? and Co? cations inside each molybdate. The synthesized Cu/Mo?C, Ni/Mo?C and Co/Mo?C catalysts were highly active for the hydrogenation of CO?. The metal/Mo?C systems exhibited large variations in the selectivity towards methanol, methane and CnH?n?? (n > 2) hydrocarbons depending on the nature of the supported metal and its ability to cleave C-O bonds. Cu/Mo?C displayed a high selectivity for CO and methanol production. Ni/Mo?C and Co/Mo?C were the most active catalysts for the activation and full decomposition of CO?, showing high selectivity for the production of methane (Ni case) and CnH?n?? (n > 2) hydrocarbons (Co case).

  10. Probing the mechanism of high capacitance in two-dimensional titanium carbide using in-situ X-Ray absorption spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lukatskaya, Maria R.; Bak, Seong -Min; Yu, Xiqian; Yang, Xiao -Qing; Barsoum, Michel W.; Gogotsi, Yury

    2015-05-28

    The field of supercapacitors (electrochemical capacitors) is constantly evolving. The global motivation is to create devices that possess a significant energy density without compromising the power density. To achieve this goal, new materials must be discovered and complex electrode architectures developed.

  11. EIS-0132: Final Environmental Impact Statement

    Broader source: Energy.gov [DOE]

    Remedial Actions at the Former Union Carbide Corp. Uranium Mill Sites, Rifle, Garfield County, Colorado

  12. Method for fabricating hafnia films

    DOE Patents [OSTI]

    Hu, Michael Z [Knoxville, TN

    2007-08-21

    The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable of undergoing homogeneous precipitation under controlled conditions for a desired period of time at a controlled temperature and controlled solution acidity for desired nanocluster nucleation and growth kinetics, desired nanocluster size, desired growth rate of film thickness and desired film surface characteristics. The method further comprising forming the self-assembled monolayer on the surface of the substrate wherein the self-assembled monolayer comprises a plurality of hydrocarbon chains cross-linked together along the surface of the substrate, the hydrocarbon chains being uniformly spaced from one another and wherein each of the hydrocarbon chains having a functional anchoring group at a first end of the chain covalently bonded with the surface of the substrate and each of the hydrocarbon chains having a functional terminating group projected away from the surface wherein the functional terminating group provides a bonding site for the hafnium film to grow; and exposing the substrate to the aqueous solution for a desired period of time at a controlled temperature wherein the hafnium ionic complexes and the hafnium nanoclusters are deposited on the bonding site of the functional terminating group thereby forming the hafnia film wherein the hafnium bonded to the hydrocarbons and to one another provide a uniform ordered arrangement defined by the uniform arrangement of the hydrocarbons.

  13. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    SciTech Connect (OSTI)

    Sharath, S. U. Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.

    2014-08-18

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3?V is observed up to 200?nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  14. U.S. Energy Secretary Visits Kuwait | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Kuwait's Petrochemical Industries Company (PIC) and U.S. company Union Carbide, a ... primarily for export to Asia and Europe. PIC and Union Carbide each have a 45 percent ...

  15. The effect of carbon on surface quality of solid-state-sintered silicon

    Office of Scientific and Technical Information (OSTI)

    carbide as optical materials (Journal Article) | SciTech Connect The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials Citation Details In-Document Search Title: The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials The microstructure and the distribution of carbon (C) in silicon carbide (SiC) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. The

  16. Contract No. W-7405-eng-26 Health and Safety Research Division

    Office of Legacy Management (LM)

    CARBIDE CORPORATION for the DEPARTMENT OF ENERGY CONTENTS LIST OF FIGURES . . . . . . . . ... Area C (Former Rplling Area) ...... Equipment in Storage ...... . ...

  17. Method of joining ceramics

    DOE Patents [OSTI]

    Henager, Jr., Charles H. (Kennewick, WA); Brimhall, John L. (West Richland, WA)

    2000-01-01

    According to the method of the present invention, joining a first bi-element carbide to a second bi-element carbide, has the steps of: (a) forming a bond agent containing a metal carbide and silicon; (b) placing the bond agent between the first and second bi-element carbides to form a pre-assembly; and (c) pressing and heating the pre-assembly in a non-oxidizing atmosphere to a temperature effective to induce a displacement reaction creating a metal silicon phase bonding the first and second bi-element carbides.

  18. Production method for making rare earth compounds

    DOE Patents [OSTI]

    McCallum, R. William (Ames, IA); Ellis, Timothy W. (Ames, IA); Dennis, Kevin W. (Ames, IA); Hofer, Robert J. (Ames, IA); Branagan, Daniel J. (Ames, IA)

    1997-11-25

    A method of making a rare earth compound, such as a earth-transition metal permanent magnet compound, without the need for producing rare earth metal as a process step, comprises carbothermically reacting a rare earth oxide to form a rare earth carbide and heating the rare earth carbide, a compound-forming reactant (e.g. a transition metal and optional boron), and a carbide-forming element (e.g. a refractory metal) that forms a carbide that is more thermodynamically favorable than the rare earth carbide whereby the rare earth compound (e.g. Nd.sub.2 Fe.sub.14 B or LaNi.sub.5) and a carbide of the carbide-forming element are formed.

  19. Production method for making rare earth compounds

    DOE Patents [OSTI]

    McCallum, R.W.; Ellis, T.W.; Dennis, K.W.; Hofer, R.J.; Branagan, D.J.

    1997-11-25

    A method of making a rare earth compound, such as a earth-transition metal permanent magnet compound, without the need for producing rare earth metal as a process step, comprises carbothermically reacting a rare earth oxide to form a rare earth carbide and heating the rare earth carbide, a compound-forming reactant (e.g., a transition metal and optional boron), and a carbide-forming element (e.g., a refractory metal) that forms a carbide that is more thermodynamically favorable than the rare earth carbide whereby the rare earth compound (e.g., Nd{sub 2}Fe{sub 14}B or LaNi{sub 5}) and a carbide of the carbide-forming element are formed.

  20. Boron containing multilayer coatings and method of fabrication

    DOE Patents [OSTI]

    Makowiecki, Daniel M. (Livermore, CA); Jankowski, Alan F. (Livermore, CA)

    1997-01-01

    Hard coatings are fabricated from multilayer boron/boron carbide, boron carbide/cubic boron nitride, and boron/boron nitride/boron carbide, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron and boron carbide used in forming the multilayers are formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/boron carbide, and boron carbide/cubic boron nitride is produced by depositing alternate layers of boron, cubic boron nitride or boron carbide, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be of a discrete or a blended or graded composition.

  1. Joining of materials using laser heating

    DOE Patents [OSTI]

    Cockeram, Brian V.; Hicks, Trevor G.; Schmid, Glenn C.

    2003-07-01

    A method for diffusion bonding ceramic layers such as boron carbide, zirconium carbide, or silicon carbide uses a defocused laser beam to heat and to join ceramics with the use of a thin metal foil insert. The metal foil preferably is rhenium, molybdenum or titanium. The rapid, intense heating of the ceramic/metal/ceramic sandwiches using the defocused laser beam results in diffusive conversion of the refractory metal foil into the ceramic and in turn creates a strong bond therein.

  2. Zone sintering of ceramic fuels

    DOE Patents [OSTI]

    Matthews, R. Bruce (Falls Church, VA); Chidester, Kenneth M. (Los Alamos, NM); Moore, H. Gene (Los Alamos, NM)

    1994-01-01

    Cold pressed UC.sub.2 fuel compacts are sintered at temperatures greater than about 1850.degree. C. while in contact with a sintering facilitator material, e.g., tantalum, niobium, tungsten or a metal carbide such as uranium carbide, thereby allowing for a reduction in the overall porosity and leaving the desired product, i.e., a highly dense, large-grained uranium dicarbide. The process of using the sintering facilitator materials can be applied in the preparation of other carbide materials.

  3. Polyethylene/Boron Composites for Radiation Shielding Applications

    SciTech Connect (OSTI)

    Harrison, Courtney; Grulke, Eric; Burgett, Eric; Hertel, Nolan

    2008-01-21

    Multifunctional composites made with boron are absorbers of low energy nuetrons, and could be used for structural shielding materials. Polyethylene/boron carbide composites were fabricated using conventional polymer processing techniques, and were evaluated for mechanical and radiation shielding properties. Addition of neat boron carbide (powder and nanoparticles) to an injection molding grade HPDE showed superior mechanical properties compared to neat HDPE. Radiation shielding measurements of a 2 wt% boron carbide composite were improved over those of the neat polyethylene.

  4. Vehicle Technologies Office Merit Review 2015: 88 Kilowatt Automotive

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Inverter with New 900 Volt Silicon Carbide MOSFET Technology | Department of Energy 88 Kilowatt Automotive Inverter with New 900 Volt Silicon Carbide MOSFET Technology Vehicle Technologies Office Merit Review 2015: 88 Kilowatt Automotive Inverter with New 900 Volt Silicon Carbide MOSFET Technology Presentation given by Cree at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about 88 kilowatt automotive inverter with new

  5. Joined ceramic product

    DOE Patents [OSTI]

    Henager, Jr., Charles W [Kennewick, WA; Brimhall, John L. (West Richland, WA) [West Richland, WA

    2001-08-21

    According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

  6. Metal matrix composite of an iron aluminide and ceramic particles and method thereof

    DOE Patents [OSTI]

    Schneibel, Joachim H. (Maryville, TN)

    1997-01-01

    A metal matrix composite comprising an iron aluminide binder phase and a ceramic particulate phase such as titanium diboride, zirconium diboride, titanium carbide and tungsten carbide is made by heating a mixture of iron aluminide powder and particulates of one of the ceramics such as titanium diboride, zirconium diboride, titanium carbide and tungsten carbide in a alumina crucible at about 1450.degree. C. for about 15 minutes in an evacuated furnace and cooling the mixture to room temperature. The ceramic particulates comprise greater than 40 volume percent to about 99 volume percent of the metal matrix composite.

  7. 2011 Meeting

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Resource-Renewable Boiling Water Reactor RPM Revolutions Per Minute SEM Scanning Electron Microscopy SFR Sodium Fast Reactor SiC Silicon Carbide SNL Sandia National ...

  8. The effect of carbon on surface quality of solid-state-sintered...

    Office of Scientific and Technical Information (OSTI)

    The microstructure and the distribution of carbon (C) in silicon carbide (SiC) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. The ...

  9. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... The microstructure and the distribution of carbon (C) in silicon carbide (SiC) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. ...

  10. Microsoft Word - halden paper.docx

    Broader source: Energy.gov (indexed) [DOE]

    safety because of their high temperature strength, chemical stability and reduced hydrogen generation. Keywords: silicon carbide, SiC, ceramic matrix composite, cladding...

  11. Flash® Processed Steel for Automotive Applications

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    segregation of phase and chemistry by limiting carbon migration and carbide dissolution. ... was developed hybridizing transverse and longitudinal flux magnetic field practices. ...

  12. Technologies and Devices International Inc | Open Energy Information

    Open Energy Info (EERE)

    Zip: 20904 Product: Develops, manufactures and markets electronic components using III-V nitride semiconductor materials and silicon carbide. References: Technologies and...

  13. Tu3Og,

    Office of Legacy Management (LM)

    The electrical and thermal conductivity of the metal, and thermal conductivity and density of black dioxide and sintered carbide were measured. CT-192 No date - Princeton...

  14. Sandia Energy - Sandia, DOE Energy Storage Program, GeneSiCSemiconduc...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Energy Storage Program, GeneSiC Semiconductor, U.S. Army ARDEC: Ultra-High-Voltage Silicon Carbide Thyristors Home Infrastructure Security Energy Grid Integration Partnership...

  15. Effects of passivation on synthesis, structure and composition...

    Office of Scientific and Technical Information (OSTI)

    on synthesis, structure and composition of molybdenum carbide supported platinum water-gas shift catalysts Citation Details In-Document Search Title: Effects of passivation...

  16. Guizhou New Material Dev Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Guizhou New Material Dev Co Ltd Jump to: navigation, search Name: Guizhou New Material Dev. Co Ltd Place: Guiyang, China Zip: 550018 Sector: Solar Product: Chinese silicon carbide...

  17. Dispersion toughened ceramic composites and method for making same

    DOE Patents [OSTI]

    Stinton, David P. (Knoxville, TN); Lackey, Walter J. (Oak Ridge, TN); Lauf, Robert J. (Oak Ridge, TN)

    1986-01-01

    Ceramic composites exhibiting increased fracture toughness are produced by the simultaneous codeposition of silicon carbide and titanium disilicide by chemical vapor deposition. A mixture of hydrogen, methyltrichlorosilane and titanium tetrachloride is introduced into a furnace containing a substrate such as graphite or silicon carbide. The thermal decomposition of the methyltrichlorosilane provides a silicon carbide matrix phase and the decomposition of the titanium tetrachloride provides a uniformly dispersed second phase of the intermetallic titanium disilicide within the matrix phase. The fracture toughness of the ceramic composite is in the range of about 6.5 to 7.0 MPa.sqroot.m which represents a significant increase over that of silicon carbide.

  18. Dispersion toughened ceramic composites and method for making same

    DOE Patents [OSTI]

    Stinton, D.P.; Lackey, W.J.; Lauf, R.J.

    1984-09-28

    Ceramic composites exhibiting increased fracture toughness are produced by the simultaneous codeposition of silicon carbide and titanium disilicide by chemical vapor deposition. A mixture of hydrogen, methyltrichlorosilane and titanium tetrachloride is introduced into a furnace containing a substrate such as graphite or silicon carbide. The thermal decomposition of the methyltrichlorosilane provides a silicon carbide matrix phase and the decomposition of the titanium tetrachloride provides a uniformly dispersed second phase of the intermetallic titanium disilicide within the matrix phase. The fracture toughness of the ceramic composite is in the range of about 6.5 to 7.0 MPa..sqrt..m which represents a significant increase over that of silicon carbide.

  19. Carbothermic Aluminum Production Using Scrap Aluminum As A Coolant

    DOE Patents [OSTI]

    LaCamera, Alfred F. (Trafford, PA)

    2002-11-05

    A process for producing aluminum metal by carbothermic reduction of alumina ore. Alumina ore is heated in the presence of carbon at an elevated temperature to produce an aluminum metal body contaminated with about 10-30% by wt. aluminum carbide. Aluminum metal or aluminum alloy scrap then is added to bring the temperature to about 900-1000.degree. C. and precipitate out aluminum carbide. The precipitated aluminum carbide is filtered, decanted, or fluxed with salt to form a molten body having reduced aluminum carbide content.

  20. Harsh-environment, Low-cost Sensor Technology for Engine and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Silicon Carbide Sensor Technology for Geothermal Instrumentation Improved Engine Control Strategies Enabled by Digital Signal-Processing Method for Zirconia Exhaust Sensors

  1. NETL F 451.1/1-1, Categorical Exclusion Designation Form

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Boride Ceramics for Direct Power Extraction Electrode Develop nano carbide and boride ceramic solid solutions via novel synthesis and processing and understand the fundamental...

  2. Energy Storage & Power Electronics 2008 Peer Review - Power Electronic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ESPE 2008 Peer Review - Silicon Carbide Research for Reliable Electric Power - Alan ... High Temperature, High Voltage Fully Integrated Gate Driver Circuit Energy Storage & Power ...

  3. Metal matrix composite of an iron aluminide and ceramic particles and method thereof

    DOE Patents [OSTI]

    Schneibel, J.H.

    1997-06-10

    A metal matrix composite comprising an iron aluminide binder phase and a ceramic particulate phase such as titanium diboride, zirconium diboride, titanium carbide and tungsten carbide is made by heating a mixture of iron aluminide powder and particulates of one of the ceramics such as titanium diboride, zirconium diboride, titanium carbide and tungsten carbide in a alumina crucible at about 1,450 C for about 15 minutes in an evacuated furnace and cooling the mixture to room temperature. The ceramic particulates comprise greater than 40 volume percent to about 99 volume percent of the metal matrix composite.

  4. Distribution Grid Integration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Carbide Thyristors Read More Permalink ECIS-Princeton Power Systems, Inc.: Demand Response Inverter DETL, Distribution Grid Integration, Energy, Energy Surety, Facilities, ...

  5. Intrinsic Semiconductor | Open Energy Information

    Open Energy Info (EERE)

    Intrinsic Semiconductor is a privately held emerging growth company focusing on materials and device technologies based on silicon carbide (SiC) and gallium nitride (GaN)...

  6. Cree Inc | Open Energy Information

    Open Energy Info (EERE)

    North Carolina Zip: 27703 Product: Cree develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN), silicon (Si) and...

  7. High energy neutron Computed Tomography developed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    objects. May 9, 2014 Neutron tomography horizontal "slice" of a tungsten and polyethylene test object containing tungsten carbide BBs. Neutron tomography horizontal "slice"...

  8. May

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2014 run cycle. - 52014 Neutron tomography horizontal "slice" of a tungsten and polyethylene test object containing tungsten carbide BBs. High energy neutron Computed...

  9. High-temperature fabricable nickel-iron aluminides

    DOE Patents [OSTI]

    Liu, Chain T. (Oak Ridge, TN)

    1988-02-02

    Nickel-iron aluminides are described that are based on Ni.sub.3 Al, and have significant iron content, to which additions of hafnium, boron, carbon and cerium are made resulting in Ni.sub.3 Al base alloys that can be fabricated at higher temperatures than similar alloys previously developed. Further addition of molybdenum improves oxidation and cracking resistance. These alloys possess the advantages of ductility, hot fabricability, strength, and oxidation resistance.

  10. High quality transparent conducting oxide thin films

    DOE Patents [OSTI]

    Gessert, Timothy A. (Conifer, CO); Duenow, Joel N. (Golden, CO); Barnes, Teresa (Evergreen, CO); Coutts, Timothy J. (Golden, CO)

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  11. About the deformation of ferroelectric hystereses (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect About the deformation of ferroelectric hystereses Citation Details In-Document Search Title: About the deformation of ferroelectric hystereses Studying ferroelectric hafnium oxide with focus on memory applications for the past years, discussions frequently involved the shape of measured polarization hystereses, its relation to the device performance, and how to optimize it. A perfect model-like hysteresis is of nearly rectangular shape and all deviations from this situation

  12. Metal alkoxides and methods of making same

    DOE Patents [OSTI]

    Hentges, Patrick J.; Greene, Laura H.; Pafford, Margaret Mary; Westwood, Glenn; Klemperer, Walter G.

    2005-01-04

    A method of making a superconducting structure includes depositing a metal alkoxide on a surface of a metal and hydrolyzing the metal alkoxide on the surface to form a pinhole-free film. The metal is a superconductor. The metal alkoxide may be a compound of formula (I): where M is zirconium or hafnium, and the purity of the compound is at least 97% as measured by NMR spectroscopy.

  13. Amorphous metal alloy

    DOE Patents [OSTI]

    Wang, R.; Merz, M.D.

    1980-04-09

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  14. Amorphous metal alloy and composite

    DOE Patents [OSTI]

    Wang, Rong (Richland, WA); Merz, Martin D. (Richland, WA)

    1985-01-01

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  15. Metal alloy coatings and methods for applying

    DOE Patents [OSTI]

    Merz, Martin D. (Richland, WA); Knoll, Robert W. (Kennewick, WA)

    1991-01-01

    A method of coating a substrate comprises plasma spraying a prealloyed feed powder onto a substrate, where the prealloyed feed powder comprises a significant amount of an alloy of stainless steel and at least one refractory element selected from the group consisting of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The plasma spraying of such a feed powder is conducted in an oxygen containing atmosphere and forms an adherent, corrosion resistant, and substantially homogenous metallic refractory alloy coating on the substrate.

  16. Metals at Albany: Past, Present, and Future | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Metals at Albany: Past, Present, and Future Metals at Albany: Past, Present, and Future January 4, 2016 - 2:31pm Addthis Specialty Metals Exhibit at the Albany Regional Museum in Albany, OR. Specialty Metals Exhibit at the Albany Regional Museum in Albany, OR. Reactive metals, rare metals, specialty metals - all these terms refer to a set of elements that include titanium, hafnium, niobium, and zirconium. The processing of these metals has a very close link with the Office of Fossil Energy's

  17. DOE - Office of Legacy Management -- The Carborundum Co Inc Buffalo Ave

    Office of Legacy Management (LM)

    Plant - NY 31 Buffalo Ave Plant - NY 31 FUSRAP Considered Sites Site: THE CARBORUNDUM CO., INC., BUFFALO AVE. PLANT (NY.31) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Carborundum Company NY.31-1 Location: Buffalo Avenue , Niagra Falls , New York NY.31-1 Evaluation Year: 1987 NY.31-1 Site Operations: Produced Zirconium and Hafnium; fabricated nuclear reactor fuel elements and conducted research and development with Plutonium. NY.31-1 Site

  18. DOE - Office of Legacy Management -- Brush Beryllium Co - Lorain - OH 47

    Office of Legacy Management (LM)

    Lorain - OH 47 FUSRAP Considered Sites Site: Brush Beryllium Co. - Lorain (OH.47 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 1st Street and Hamilton Avenue , Lorain , Ohio OH.47-1 Evaluation Year: 1987 OH.47-1 Site Operations: Production of beryllium metal and compounds, such as beryllium fluoride; used isotopes in the separation of zirconium and hafnium. OH.47-1 OH.47-2 OH.47-3 Site Disposition: Eliminated - Potential for

  19. Ceramic-bonded abrasive grinding tools

    DOE Patents [OSTI]

    Holcombe, C.E. Jr.; Gorin, A.H.; Seals, R.D.

    1994-11-22

    Abrasive grains such as boron carbide, silicon carbide, alumina, diamond, cubic boron nitride, and mullite are combined with a cement primarily comprised of zinc oxide and a reactive liquid setting agent and solidified into abrasive grinding tools. Such grinding tools are particularly suitable for grinding and polishing stone, such as marble and granite.

  20. Novel hard compositions and methods of preparation

    DOE Patents [OSTI]

    Sheinberg, H.

    1983-08-23

    Novel very hard compositions of matter are prepared by using in all embodiments only a minor amount of a particular carbide (or materials which can form the carbide in situ when subjected to heat and pressure); and no strategic cobalt is needed. Under a particular range of conditions, densified compositions of matter of the invention are prepared having hardnesses on the Rockwell A test substantially equal to the hardness of pure tungsten carbide and to two of the hardest commercial cobalt-bonded tungsten carbides. Alternately, other compositions of the invention which have slightly lower hardnesses than those described above in one embodiment also possess the advantage of requiring no tungsten and in another embodiment possess the advantage of having a good fracture toughness value. Photomicrographs show that the shapes of the grains of the alloy mixture with which the minor amount of carbide (or carbide-formers) is mixed are radically altered from large, rounded to small, very angular by the addition of the carbide. Superiority of one of these hard compositions of matter over cobalt-bonded tungsten carbide for ultra-high pressure anvil applications was demonstrated. 3 figs.

  1. Novel hard compositions and methods of preparation

    DOE Patents [OSTI]

    Sheinberg, Haskell (Los Alamos, NM)

    1983-08-23

    Novel very hard compositions of matter are prepared by using in all embodiments only a minor amount of a particular carbide (or materials which can form the carbide in situ when subjected to heat and pressure); and no strategic cobalt is needed. Under a particular range of conditions, densified compositions of matter of the invention are prepared having hardnesses on the Rockwell A test substantially equal to the hardness of pure tungsten carbide and to two of the hardest commercial cobalt-bonded tungsten carbides. Alternately, other compositions of the invention which have slightly lower hardnesses than those described above in one embodiment also possess the advantage of requiring no tungsten and in another embodiment possess the advantage of having a good fracture toughness value. Photomicrographs show that the shapes of the grains of the alloy mixture with which the minor amount of carbide (or carbide-formers) is mixed are radically altered from large, rounded to small, very angular by the addition of the carbide. Superiority of one of these hard compositions of matter over cobalt-bonded tungsten carbide for ultra-high pressure anvil applications was demonstrated.

  2. Dispersion toughened silicon carbon ceramics

    DOE Patents [OSTI]

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  3. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  4. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  5. Ceramic-bonded abrasive grinding tools

    DOE Patents [OSTI]

    Holcombe, Jr., Cressie E. (Farragut, TN); Gorin, Andrew H. (Knoxville, TN); Seals, Roland D. (Oak Ridge, TN)

    1994-01-01

    Abrasive grains such as boron carbide, silicon carbide, alumina, diamond, cubic boron nitride, and mullite are combined with a cement primarily comprised of zinc oxide and a reactive liquid setting agent and solidified into abrasive grinding tools. Such grinding tools are particularly suitable for grinding and polishing stone, such as marble and granite.

  6. Method And Reactor For Production Of Aluminum By Carbothermic Reduction Of Alumina

    DOE Patents [OSTI]

    Aune, Jan Arthur (Ytre Enebakk, NO); Johansen, Kai (Kristiansand, NO)

    2004-10-19

    A hollow partition wall is employed to feed carbon material to an underflow of a carbothermic reduction furnace used to make aluminum. The partition wall divides a low temperature reaction zone where aluminum oxide is reacted with carbon to form aluminum carbide and a high temperature reaction zone where the aluminum carbide and remaining aluminum oxide are reacted to form aluminum and carbon monoxide.

  7. Boron containing multilayer coatings and method of fabrication

    DOE Patents [OSTI]

    Makowiecki, D.M.; Jankowski, A.F.

    1997-09-23

    Hard coatings are fabricated from multilayer boron/boron carbide, boron carbide/cubic boron nitride, and boron/boron nitride/boron carbide, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron and boron carbide used in forming the multilayers are formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/boron carbide, and boron carbide/cubic boron nitride is produced by depositing alternate layers of boron, cubic boron nitride or boron carbide, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be of a discrete or a blended or graded composition. 6 figs.

  8. Methods for producing reinforced carbon nanotubes

    DOE Patents [OSTI]

    Ren, Zhifen (Newton, MA); Wen, Jian Guo (Newton, MA); Lao, Jing Y. (Chestnut Hill, MA); Li, Wenzhi (Brookline, MA)

    2008-10-28

    Methods for producing reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials are disclosed. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

  9. Reinforced Carbon Nanotubes.

    DOE Patents [OSTI]

    Ren, Zhifen (Newton, MA); Wen, Jian Guo (Newton, MA); Lao, Jing Y. (Chestnut Hill, MA); Li, Wenzhi (Brookline, MA)

    2005-06-28

    The present invention relates generally to reinforced carbon nanotubes, and more particularly to reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

  10. Method of depositing a high-emissivity layer

    DOE Patents [OSTI]

    Wickersham, Charles E. (Columbus, OH); Foster, Ellis L. (Powell, OH)

    1983-01-01

    A method of depositing a high-emissivity layer on a substrate comprising RF sputter deposition of a carbide-containing target in an atmosphere of a hydrocarbon gas and a noble gas. As the carbide is deposited on the substrate the hydrocarbon gas decomposes to hydrogen and carbon. The carbon deposits on the target and substrate causing a carbide/carbon composition gradient to form on the substrate. At a sufficiently high partial pressure of hydrocarbon gas, a film of high-emissivity pure carbon will eventually form over the substrate.

  11. Thermal conversion of biomass to valuable fuels, chemical feedstocks and chemicals

    DOE Patents [OSTI]

    Peters, William A. (Lexington, MA); Howard, Jack B. (Winchester, MA); Modestino, Anthony J. (Hanson, MA); Vogel, Fredreric (Villigen PSI, CH); Steffin, Carsten R. (Herne, DE)

    2009-02-24

    A continuous process for the conversion of biomass to form a chemical feedstock is described. The biomass and an exogenous metal oxide, preferably calcium oxide, or metal oxide precursor are continuously fed into a reaction chamber that is operated at a temperature of at least 1400.degree. C. to form reaction products including metal carbide. The metal oxide or metal oxide precursor is capable of forming a hydrolizable metal carbide. The reaction products are quenched to a temperature of 800.degree. C. or less. The resulting metal carbide is separated from the reaction products or, alternatively, when quenched with water, hydolyzed to provide a recoverable hydrocarbon gas feedstock.

  12. Abrasion resistant composition

    DOE Patents [OSTI]

    Fischer, Keith D; Barnes, Christopher A; Henderson, Stephen L

    2014-05-13

    A surface covering composition of abrasion resistant character adapted for disposition in overlying bonded relation to a metal substrate. The surface covering composition includes metal carbide particles within a metal matrix at a packing factor of not less than about 0.6. Not less than about 40 percent by weight of the metal carbide particles are characterized by an effective diameter in the range of +14-32 mesh prior to introduction to the metal matrix. Not less than about 3 percent by weight of the metal carbide particles are characterized by an effective diameter of +60 mesh prior to introduction to the metal matrix.

  13. Packed bed carburization of tantalum and tantalum alloy

    DOE Patents [OSTI]

    Lopez, P.C.; Rodriguez, P.J.; Pereyra, R.A.

    1999-06-29

    Packed bed carburization of a tantalum or tantalum alloy object is disclosed. A method for producing corrosion-resistant tantalum or tantalum alloy objects is described. The method includes the steps of placing the object in contact with a carburizing pack, heating the packed object in vacuum furnace to a temperature whereby carbon from the pack diffuses into the object forming grains with tantalum carbide along the grain boundaries, and etching the surface of the carburized object. This latter step removes tantalum carbides from the surface of the carburized tantalum object while leaving the tantalum carbide along the grain boundaries. 4 figs.

  14. Mixed oxide solid solutions

    DOE Patents [OSTI]

    Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

    2003-01-01

    The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

  15. Neutron absorbers and methods of forming at least a portion of a neutron absorber

    DOE Patents [OSTI]

    Guillen, Donna P; Porter, Douglas L; Swank, W David; Erickson, Arnold W

    2014-12-02

    Methods of forming at least a portion of a neutron absorber include combining a first material and a second material to form a compound, reducing the compound into a plurality of particles, mixing the plurality of particles with a third material, and pressing the mixture of the plurality of particles and the third material. One or more components of neutron absorbers may be formed by such methods. Neutron absorbers may include a composite material including an intermetallic compound comprising hafnium aluminide and a matrix material comprising pure aluminum.

  16. All-alkoxide synthesis of strontium-containing metal oxides

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM)

    2001-01-01

    A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

  17. Metal-Organic Frameworks Based on Previously Unknown Zr8/Hf Cubic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clusters | Center for Gas SeparationsRelevant to Clean Energy Technologies | Blandine Jerome Metal-Organic Frameworks Based on Previously Unknown Zr8/Hf Cubic Clusters Previous Next List Dawei Feng, Hai-Long Jiang, Ying-Pin Chen, Zhi-Yuan Gu, Zhangwen Wei, and Hong-Cai Zhou, Inorg. Chem. 52, 12661-12667 (2013) DOI: 10.1021/ic4018536 Abstract Image Abstract: The ongoing study of zirconium- and hafnium-porphyrinic metal-organic frameworks (MOFs) led to the discovery of isostructural MOFs based

  18. Characteristics of yttrium oxide laser ceramics with additives

    SciTech Connect (OSTI)

    Osipov, V V; Solomonov, V I; Orlov, A N; Shitov, V A; Maksimov, R N; Spirina, A V

    2013-03-31

    Neodymium- or ytterbium-doped laser ceramics with a disordered crystal-field structure formed by introduction of iso- and heterovalent elements into yttrium oxide are studied. It is shown that these additives broaden the spectral band of laser transitions, which makes it possible to use ceramics as active laser media emitting ultrashort pulses. Lasing was obtained in several samples of this ceramics. At the same time, it is shown that addition of zirconium and hafnium stimulates the Foerster quenching of upper laser levels and pump levels. (extreme light fields and their applications)

  19. Process for the manufacture of an attrition resistant sorbent used for gas desulfurization

    DOE Patents [OSTI]

    Venkataramani, Venkat S.; Ayala, Raul E.

    2003-09-16

    This process produces a sorbent for use in desulfurization of coal gas. A zinc titanate compound and a metal oxide are mixed by milling the compounds in an aqueous medium, the resulting mixture is dried and then calcined, crushed, sleved and formed into pellets for use in a moving-bed reactor. Metal oxides suitable for use as an additive in this process include: magnesium oxide, magnesium oxide plus molybdenum oxide, calcium oxide, yttrium oxide, hafnium oxide, zirconium oxide, cupric oxide, and tin oxide. The resulting sorbent has a percentage of the original zinc or titanium ions substituted for the oxide metal of the chosen additive.

  20. Novel hard compositions and methods of preparation

    DOE Patents [OSTI]

    Sheinberg, H.

    1981-02-03

    Novel very hard compositions of matter are prepared by using in all embodiments only a minor amount of a particular carbide (or materials which can form the carbide in situ when subjected to heat and pressure); and no strategic cobalt is needed. Under a particular range of conditions, densified compositions of matter of the invention are prepared having hardnesses on the Rockwell A test substantially equal to the hardness of pure tungsten carbide and to two of the hardest commercial cobalt-bonded tungsten carbides. Alternately, other compositions of the invention which have slightly lower hardnesses than those described above in one embodiment also possess the advantage of requiring no tungsten and in another embodiment possess the advantage of having a good fracture toughness value.

  1. Temperature dependence of the Pd [ital K]-edge extended x-ray-absorption fine structure of PdC[sub [ital x

    SciTech Connect (OSTI)

    McCaulley, J.A. (Hoechst Celanese Research Division, Robert L. Mitchell Technical Center, 86 Morris Avenue, Summit, New Jersey 07901 (United States))

    1993-03-01

    Pd [ital K]-edge extended x-ray-absorption fine-structure (EXAFS) and x-ray-absorption near-edge-structure (XANES) measurements were performed on a Pd carbide phase, PdC[sub [ital x

  2. Synthesis and study of novel silicon-based unsaturated polymers

    SciTech Connect (OSTI)

    Lin, J.

    1995-06-19

    Novel unsaturated polymers have been synthesized and studied as precursors to silicon carbide and third order nonlinear optical materials. X ray structures were obtained. Kinetic and mechanistic studies of the unique thermal isomerization of dimethylenedisilacyclobutane to a carbene were conducted.

  3. Breakthrough: Better Fiber for Better Products

    ScienceCinema (OSTI)

    Griffith, George; Garnier, John;

    2013-05-28

    Researchers at Idaho National Laboratory have developed a cost-effective method for the continuous production of alpha silicon carbide fiber. The exceptionally strong, lightweight fiber could enable significant performance improvements in many everyday products.

  4. Heat treated 9 Cr-1 Mo steel material for high temperature application

    DOE Patents [OSTI]

    Jablonski, Paul D.; Alman, David; Dogan, Omer; Holcomb, Gordon; Cowen, Christopher

    2012-08-21

    The invention relates to a composition and heat treatment for a high-temperature, titanium alloyed, 9 Cr-1 Mo steel exhibiting improved creep strength and oxidation resistance at service temperatures up to 650.degree. C. The novel combination of composition and heat treatment produces a heat treated material containing both large primary titanium carbides and small secondary titanium carbides. The primary titanium carbides contribute to creep strength while the secondary titanium carbides act to maintain a higher level of chromium in the finished steel for increased oxidation resistance, and strengthen the steel by impeding the movement of dislocations through the crystal structure. The heat treated material provides improved performance at comparable cost to commonly used high-temperature steels such as ASTM P91 and ASTM P92, and requires heat treatment consisting solely of austenization, rapid cooling, tempering, and final cooling, avoiding the need for any hot-working in the austenite temperature range.

  5. CX-011470: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Digestion analysis of copper foil and silicon carbide samples CX(s) Applied: B3.6 Date: 11/26/2013 Location(s): South Carolina Offices(s): Savannah River Operations Office

  6. Poly(silylene)vinylenes from ethynylhydridosilanes

    DOE Patents [OSTI]

    Barton, T.J.; Ijadi-Maghsoodi, S.

    1992-11-10

    Catalytic polymerization of dialkyl-, alkyl aryl- or diaryl-diethynylhydridosilanes cleanly affords soluble poly(silylene)vinylenes which can be shaped as fibers, films and bulk objects and thermally converted to silicon carbide. No Drawings

  7. Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

    SciTech Connect (OSTI)

    Marckx, D. A.

    2006-03-01

    This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

  8. Porous nuclear fuel element for high-temperature gas-cooled nuclear reactors

    DOE Patents [OSTI]

    Youchison, Dennis L.; Williams, Brian E.; Benander, Robert E.

    2011-03-01

    Porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's), and to processes for fabricating them. Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, the nuclear fuel may be deposited inside of a highly porous skeletal structure made of, for example, reticulated vitreous carbon foam.

  9. Porous nuclear fuel element with internal skeleton for high-temperature gas-cooled nuclear reactors

    DOE Patents [OSTI]

    Youchison, Dennis L.; Williams, Brian E.; Benander, Robert E.

    2013-09-03

    Porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's), and to processes for fabricating them. Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, the nuclear fuel may be deposited inside of a highly porous skeletal structure made of, for example, reticulated vitreous carbon foam.

  10. Methods for manufacturing porous nuclear fuel elements for high-temperature gas-cooled nuclear reactors

    DOE Patents [OSTI]

    Youchison, Dennis L.; Williams, Brian E.; Benander, Robert E.

    2010-02-23

    Methods for manufacturing porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's). Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, a thin coating of nuclear fuel may be deposited inside of a highly porous skeletal structure made, for example, of reticulated vitreous carbon foam.

  11. Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys

    DOE Patents [OSTI]

    Stevenson, D.T.; Troup, R.L.

    1985-01-01

    Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide. 1 fig.

  12. Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys

    DOE Patents [OSTI]

    Stevenson, David T. (Washington Township, Armstrong County, PA); Troup, Robert L. (Murrysville, PA)

    1985-01-01

    Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide.

  13. Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wire

    DOE Patents [OSTI]

    Suplinskas, Raymond J. (Haverhill, MA); Finnemore, Douglas (Ames, IA); Bud'ko, Serquei (Ames, IA); Canfield, Paul (Ames, IA)

    2007-11-13

    A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

  14. ESK SIC GmbH | Open Energy Information

    Open Energy Info (EERE)

    ESK SIC GmbH Jump to: navigation, search Name: ESK-SIC GmbH Place: Germany Zip: D- 50226 Sector: Solar Product: Supplier of silicon carbide for wire saws, with some solar...

  15. CX-001497: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Harsh Environment Silicon Carbide Sensor Technology for Geothermal InstrumentationCX(s) Applied: B3.6, A9Date: 04/01/2010Location(s): Berkeley, CaliforniaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  16. CX-002539: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Fast Neutron Irradiation and Subsequent Characterization of CarbidesCX(s) Applied: B3.6Date: 05/05/2010Location(s): Aiken, South CarolinaOffice(s): Environmental Management, Savannah River Operations Office

  17. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    Broader source: Energy.gov [DOE]

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear...

  18. Sandia National Laboratories: Sandia wins 5 R&D 100 awards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    wins a 'green technology' gold award Sandia R&D 100 winner Stan Atcitty, right, discusses power conversion with John Hostetler of United Silicon Carbide Inc. Competing in an...

  19. Methods for making a porous nuclear fuel element

    DOE Patents [OSTI]

    Youchison, Dennis L; Williams, Brian E; Benander, Robert E

    2014-12-30

    Porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's), and to processes for fabricating them. Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, the nuclear fuel may be deposited inside of a highly porous skeletal structure made of, for example, reticulated vitreous carbon foam.

  20. Energy Storage Systems 2014 Peer Review Presentations - Poster...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State PDF icon Reliable High Performance Gate Oxides for Wide Band Gap Devices - Jon ... Eugene Furman & Rashmi Dixit, PSUDRS Research PDF icon 6.5 kV Silicon Carbide ...

  1. Y-12s favorite stories, part 4

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C. Nelson Rucker, Jr., Carbide & Carbon Chemical Company, 1947- 1948; Dr. Clarence E. Larson, C&CCC, 1948-1949; W. Douglas Lavers, C&CCC, 1949-1952; Logan Emlet, C&CCC, 1952-1954;...

  2. Manganese partitioning in low carbon manganese steel during annealing

    SciTech Connect (OSTI)

    Lis, J.; Lis, A. Kolan, C.

    2008-08-15

    For 6Mn16 steel experimental soft annealing at 625 deg. C for periods from 1 h to 60 h and modeling with Thermo-Calc were performed to estimate the partitioning of alloying elements, in particular Mn, between ferrite, cementite and austenite. Using transmission electron microscopy and X-ray analysis it was established that the increase of Mn concentration in carbides to a level 7%-11.2% caused a local decrease of the Ac{sub 1} temperature and led to the presence of austenite around the carbides. Thus, after cooling, small bainite-martensite or bainite-martensite-retained austenite (BM-A) islands were observed. A dispersion of carbides and a coarsening process were observed. The measured amount of Mn in the carbides was in good agreement with theoretical predictions.

  3. Breakthrough: Better Fiber for Better Products

    SciTech Connect (OSTI)

    Griffith, George; Garnier, John;

    2012-01-01

    Researchers at Idaho National Laboratory have developed a cost-effective method for the continuous production of alpha silicon carbide fiber. The exceptionally strong, lightweight fiber could enable significant performance improvements in many everyday products.

  4. Uranium Mill Tailings Remedial Action Project (UMTRAP), Slick Rock, Colorado, Revision 1. Bid schedule, special conditions, specifications, and subcontract drawings

    SciTech Connect (OSTI)

    1995-10-01

    This volume contains: bidding requirements; terms and conditions; specifications for Division 1 -- general requirements; specifications for Division 2 -- sitework; specifications for Divisions 5 -- metals; subcontract drawings, (general, Union Carbide processing site, North Continent processing site, and Burro Canyon disposal site).

  5. Transformation process for production of ultrahigh carbon steels and new alloys

    DOE Patents [OSTI]

    Strum, Michael J. (Pleasanton, CA); Goldberg, Alfred (Livermore, CA); Sherby, Oleg D. (Palo Alto, CA); Landingham, Richard L. (Livermore, CA)

    1995-01-01

    Ultrahigh carbon steels with superplastic properties are produced by heating a steel containing ferrite and carbide phases to a soaking temperature approximately 50.degree. C. above the A.sub.1 transformation temperature, soaking the steel above the A.sub.1 temperature for a sufficient time that the major portion of the carbides dissolve into the austenite matrix, and then cooling the steel in a controlled manner within predetermined limits of cooling rate or transformation temperature, to obtain a steel having substantially spheroidal carbides. New alloy compositions contain aluminum and solute additions which promote the formation of a fine grain size and improve the resistance of the carbides to coarsening at the forming temperature.

  6. Transformation process for production of ultrahigh carbon steels and new alloys

    DOE Patents [OSTI]

    Strum, M.J.; Goldberg, A.; Sherby, O.D.; Landingham, R.L.

    1995-08-29

    Ultrahigh carbon steels with superplastic properties are produced by heating a steel containing ferrite and carbide phases to a soaking temperature approximately 50 C above the A{sub 1} transformation temperature, soaking the steel above the A{sub 1} temperature for a sufficient time that the major portion of the carbides dissolve into the austenite matrix, and then cooling the steel in a controlled manner within predetermined limits of cooling rate or transformation temperature, to obtain a steel having substantially spheroidal carbides. New alloy compositions contain aluminum and solute additions which promote the formation of a fine grain size and improve the resistance of the carbides to coarsening at the forming temperature. 9 figs.

  7. Molybdenum disilicide alloy matrix composite

    DOE Patents [OSTI]

    Petrovic, J.J.; Honnell, R.E.; Gibbs, W.S.

    1991-12-03

    Compositions of matter consisting of matrix materials having silicon carbide dispersed throughout them and methods of making the compositions are disclosed. A matrix material is an alloy of an intermetallic compound, molybdenum disilicide, and at least one secondary component which is a refractory silicide. The silicon carbide dispersant may be in the form of VLS whiskers, VS whiskers, or submicron powder or a mixture of these forms. 3 figures.

  8. Seadrift/UCAR pipelines achieve ISO registration

    SciTech Connect (OSTI)

    Arrieta, J.R.; Byrom, J.A.; Gasko, H.M. )

    1992-10-01

    Proper meter station design using gas orifice meters must include consideration of a number of factors to obtain the best accuracy available. This paper reports that Union Carbide's Seadrift/UCAR Pipelines has become the world's first cross-country pipelines to comply with the International Standards Organization's quality criteria for transportation and distribution of ethylene. Carbide's organization in North America and Europe, with 22 of the corporation's businesses having the internationally accepted quality system accredited by a third-party registrar.

  9. Microsoft Word - DOE-ID-14-088 General Atomics EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8 SECTION A. Project Title: Modularization Fabrication and Characterization of Complex Silicon Carbide Composite Structures - General Atomics SECTION B. Project Description General Atomics will The proposed project will explore innovative methods for fabricating and testing complex Silicon carbide (SiC) and SiC fiber-reinforced composite structures pertinent to advanced reactor concepts. The project will use existing facilities to conduct the research. SECTION C. Environmental Aspects /

  10. Disc valve for sampling erosive process streams

    DOE Patents [OSTI]

    Mrochek, John E. (Oak Ridge, TN); Dinsmore, Stanley R. (Norris, TN); Chandler, Edward W. (Knoxville, TN)

    1986-01-01

    A four-port disc valve for sampling erosive, high temperature process streams. A rotatable disc defining opposed first and second sampling cavities rotates between fired faceplates defining flow passageways positioned to be alternatively in axial alignment with the first and second cavities. Silicon carbide inserts and liners composed of .alpha. silicon carbide are provided in the faceplates and in the sampling cavities to limit erosion while providing lubricity for a smooth and precise operation when used under harsh process conditions.

  11. Resin infiltration transfer technique

    DOE Patents [OSTI]

    Miller, David V. (Pittsburgh, PA); Baranwal, Rita (Glenshaw, PA)

    2009-12-08

    A process has been developed for fabricating composite structures using either reaction forming or polymer infiltration and pyrolysis techniques to densify the composite matrix. The matrix and reinforcement materials of choice can include, but are not limited to, silicon carbide (SiC) and zirconium carbide (ZrC). The novel process can be used to fabricate complex, net-shape or near-net shape, high-quality ceramic composites with a crack-free matrix.

  12. Joining of SiC parts by polishing and hipping

    DOE Patents [OSTI]

    Rossi, Guilio A. (Shrewsbury, MA); Pelletier, Paul J. (Thompson, CT)

    1990-05-15

    A method of joining two pre-sintered pieces of silicon carbide is disclosed. It entails polishing the surfaces to be joined to a mirror-finish, fitting the polished surfaces together to form a composite structure, and then subjecting the composite structure to hot isostatic pressing under conditions which are sufficient to form a joint which is essentially indistinguishable from the original silicon carbide pieces.

  13. Separation of Fischer-Tropsch Wax Products from Ultrafine Iron Catalyst Particles

    SciTech Connect (OSTI)

    James K. Neathery; Gary Jacobs; Amitava Sarkar; Adam Crawford; Burtron H. Davis

    2006-09-30

    In the previous reporting period, modifications were completed for integrating a continuous wax filtration system for a 4 liter slurry bubble column reactor. During the current reporting period, a shakedown of the system was completed. Several problems were encountered with the progressive cavity pump used to circulate the wax/catalyst slurry though the cross-flow filter element and reactor. During the activation of the catalyst with elevated temperature (> 270 C) the elastomer pump stator released sulfur thereby totally deactivating the iron-based catalyst. Difficulties in maintaining an acceptable leak rate from the pump seal and stator housing were also encountered. Consequently, the system leak rate exceeded the expected production rate of wax; therefore, no online filtration could be accomplished. Work continued regarding the characterization of ultra-fine catalyst structures. The effect of carbidation on the morphology of iron hydroxide oxide particles was the focus of the study during this reporting period. Oxidation of Fe (II) sulfate results in predominantly {gamma}-FeOOH particles which have a rod-shaped (nano-needles) crystalline structure. Carbidation of the prepared {gamma}-FeOOH with CO at atmospheric pressure produced iron carbides with spherical layered structure. HRTEM and EDS analysis revealed that carbidation of {gamma}-FeOOH particles changes the initial nano-needles morphology and generates ultrafine carbide particles with irregular spherical shape.

  14. Weld overlay coatings for erosion control. Task A: Literature review, progress report

    SciTech Connect (OSTI)

    Levin, B.; DuPont, J.N.; Marder, A.R.

    1993-03-03

    A literature review was made. In spite of similarities between abrasive wear and solid particle erosion, weld overlay hardfacing alloys that exhibit high abrasion resistance may not necessarily have good erosion resistance. The performance of weld overlay hardfacing alloys in erosive environments has not been studied in detail. It is believed that primary-solidified hard phases such as carbides and intermetallic compounds have a strong influence on erosion resistance of weld overlay hardfacing alloys. However, relationships between size, shape, and volume fraction of hard phases in a hardfacing alloys and erosion resistance were not established. Almost all hardfacing alloys can be separated into two major groups based upon chemical compositions of the primary solidified hard phases: (a) carbide hardening alloys (Co-base/carbide, WC-Co and some Fe base superalloys); and (b) intermetallic hardening alloys (Ni-base alloys, austenitic steels, iron-aluminides).

  15. Weld overlay coatings for erosion control

    SciTech Connect (OSTI)

    Levin, B.; DuPont, J.N.; Marder, A.R.

    1993-03-03

    A literature review was made. In spite of similarities between abrasive wear and solid particle erosion, weld overlay hardfacing alloys that exhibit high abrasion resistance may not necessarily have good erosion resistance. The performance of weld overlay hardfacing alloys in erosive environments has not been studied in detail. It is believed that primary-solidified hard phases such as carbides and intermetallic compounds have a strong influence on erosion resistance of weld overlay hardfacing alloys. However, relationships between size, shape, and volume fraction of hard phases in a hardfacing alloys and erosion resistance were not established. Almost all hardfacing alloys can be separated into two major groups based upon chemical compositions of the primary solidified hard phases: (a) carbide hardening alloys (Co-base/carbide, WC-Co and some Fe base superalloys); and (b) intermetallic hardening alloys (Ni-base alloys, austenitic steels, iron-aluminides).

  16. High temperature fuel/emitter system for advanced thermionic fuel elements

    SciTech Connect (OSTI)

    Moeller, Helen H.; Bremser, Albert H.; Gontar, Alexander; Fiviesky, Evgeny

    1997-01-10

    Specialists in space applications are currently focusing on bimodal power systems designed to provide both electric power and thermal propulsion (Kennedy, 1994 and Houts, 1995). Our work showed that thermionics is a viable technology for nuclear bimodal power systems. We demonstrated that materials for a thermionic fuel-emitter combination capable of performing at operating temperatures of 2473 K are not only possible but available. The objective of this work, funded by the US Department of Energy, Office of Space and Defense Power Systems, was to evaluate the compatibility of fuel material consisting of an uranium carbide/tantalum carbide solid solution with an emitter material consisting of a monocrystalline tungsten-niobium alloy. The uranium loading of the fuel material was 70 mole% uranium carbide. The program was successfully accomplished by a B and W/SIA LUTCH team. Its workscope was integrated with tasks being performed at both Babcock and Wilcox, Lynchburg Research Center, Lynchburg, Virginia, and SIA LUTCH, Podolsk, Russia. Samples were fabricated by LUTCH and seven thermal tests were performed in a hydrogen atmosphere. The first preliminary test was performed at 2273 K by LUTCH, and the remaining six tests were performed At B and W. Three tests were performed at 2273 K, two at 2373 K, and the final test at 2473 K. The results showed that the fuel and emitter materials were compatible in the presence of hydrogen. No evidence of liquid formation, dissolution of the uranium carbide from the uranium carbide/tantalum carbide solid solution, or diffusion of the uranium into the monocrystalline tungsten alloy was observed. Among the highlights of the program was the successful export of the fuel samples from Russia and their import into the US by commercial transport. This paper will discuss the technical aspects of this work.

  17. Nanostructured metal foams: synthesis and applications

    SciTech Connect (OSTI)

    Luther, Erik P; Tappan, Bryce; Mueller, Alex; Mihaila, Bogdan; Volz, Heather; Cardenas, Andreas; Papin, Pallas; Veauthier, Jackie; Stan, Marius

    2009-01-01

    Fabrication of monolithic metallic nanoporous materials is difficult using conventional methodology. Here they report a relatively simple method of synthesizing monolithic, ultralow density, nanostructured metal foams utilizing self-propagating combustion synthesis of novel metal complexes containing high nitrogen energetic ligands. Nanostructured metal foams are formed in a post flame-front dynamic assembly with densities as low as 0.011 g/cc and surface areas as high as 270 m{sup 2}/g. They have produced metal foams via this method of titanium, iron, cobalt, nickel, zirconium, copper, palladium, silver, hafnium, platinum and gold. Microstructural features vary as a function of composition and process parameters. Applications for the metal foams are discussed including hydrogen absorption in palladium foams. A model for the sorption kinetics of hydrogen in the foams is presented.

  18. Bonded ultrasonic transducer and method for making

    DOE Patents [OSTI]

    Dixon, R.D.; Roe, L.H.; Migliori, A.

    1995-11-14

    An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements. 12 figs.

  19. Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces

    SciTech Connect (OSTI)

    Zhernokletov, D. M.; Dong, H.; Brennan, B.; Kim, J.; Yakimov, M.; Tokranov, V.; Oktyabrsky, S.; Wallace, R. M.; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080

    2013-04-01

    An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

  20. Process for production of a metal hydride

    DOE Patents [OSTI]

    Allen, Nathan Tait; Butterick, III, Robert; Chin, Arthur Achhing; Millar, Dean Michael; Molzahn, David Craig

    2014-08-12

    A process for production of a metal hydride compound MH.sub.x, wherein x is one or two and M is an alkali metal, Be or Mg. The process comprises combining a compound of formula (R.sup.1O).sub.xM with aluminum, hydrogen and at least one metal selected from among titanium, zirconium, hafnium, niobium, vanadium, tantalum and iron to produce a compound of formula MH.sub.x. R.sup.1 is phenyl or phenyl substituted by at least one alkyl or alkoxy group. A mole ratio of aluminum to (R.sup.1O).sub.xM is from 0.1:1 to 1:1. The catalyst is present at a level of at least 200 ppm based on weight of aluminum.

  1. Nickel aluminide alloy suitable for structural applications

    DOE Patents [OSTI]

    Liu, Chain T. (Oak Ridge, TN)

    1998-01-01

    Alloys for use in structural applications based upon NiAl to which are added selected elements to enhance room temperature ductility and high temperature strength. Specifically, small additions of molybdenum produce a beneficial alloy, while further additions of boron, carbon, iron, niobium, tantalum, zirconium and hafnium further improve performance of alloys at both room temperature and high temperatures. A preferred alloy system composition is Ni--(49.1.+-.0.8%)Al--(1.0.+-.0.8%)Mo--(0.7.+-.0.5%)Nb/Ta/Zr/Hf--(nearly zero to 0.03%)B/C, where the % is at. % in each of the concentrations. All alloys demonstrated good oxidation resistance at the elevated temperatures. The alloys can be fabricated into components using conventional techniques.

  2. Bonded ultrasonic transducer and method for making

    DOE Patents [OSTI]

    Dixon, Raymond D. (Los Alamos, NM); Roe, Lawrence H. (Los Alamos, NM); Migliori, Albert (Santa Fe, NM)

    1995-01-01

    An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements.

  3. Composite catalyst for carbon monoxide and hydrocarbon oxidation

    DOE Patents [OSTI]

    Liu, Wei (Cambridge, MA); Flytzani-Stephanopoulos, Maria (Winchester, MA)

    1996-01-01

    A method and composition for the complete oxidation of carbon monoxide and/or hydrocarbon compounds. The method involves reacting the carbon monoxide and/or hydrocarbons with an oxidizing agent in the presence of a metal oxide composite catalyst. The catalyst is prepared by combining fluorite-type oxygen ion conductors with active transition metals. The fluorite oxide, selected from the group consisting of cerium oxide, zirconium oxide, thorium oxide, hafnium oxide, and uranium oxide, and may be doped by alkaline earth and rare earth oxides. The transition metals, selected from the group consisting of molybdnum, copper, cobalt, maganese, nickel, and silver, are used as additives. The atomic ratio of transition metal to fluorite oxide is less than one.

  4. Composite catalyst for carbon monoxide and hydrocarbon oxidation

    DOE Patents [OSTI]

    Liu, W.; Flytzani-Stephanopoulos, M.

    1996-03-19

    A method and composition are disclosed for the complete oxidation of carbon monoxide and/or hydrocarbon compounds. The method involves reacting the carbon monoxide and/or hydrocarbons with an oxidizing agent in the presence of a metal oxide composite catalyst. The catalyst is prepared by combining fluorite-type oxygen ion conductors with active transition metals. The fluorite oxide, selected from the group consisting of cerium oxide, zirconium oxide, thorium oxide, hafnium oxide, and uranium oxide, and may be doped by alkaline earth and rare earth oxides. The transition metals, selected from the group consisting of molybdenum, copper, cobalt, manganese, nickel, and silver, are used as additives. The atomic ratio of transition metal to fluorite oxide is less than one.

  5. Nickel aluminide alloy suitable for structural applications

    DOE Patents [OSTI]

    Liu, C.T.

    1998-03-10

    Alloys are disclosed for use in structural applications based upon NiAl to which are added selected elements to enhance room temperature ductility and high temperature strength. Specifically, small additions of molybdenum produce a beneficial alloy, while further additions of boron, carbon, iron, niobium, tantalum, zirconium and hafnium further improve performance of alloys at both room temperature and high temperatures. A preferred alloy system composition is Ni--(49.1{+-}0.8%)Al--(1.0{+-}0.8%)Mo--(0.7 + 0.5%)Nb/Ta/Zr/Hf--(nearly zero to 0.03%)B/C, where the % is at. % in each of the concentrations. All alloys demonstrated good oxidation resistance at the elevated temperatures. The alloys can be fabricated into components using conventional techniques. 4 figs.

  6. Impact of the control rod consumption on the reactivity control of a SFR break-even core

    SciTech Connect (OSTI)

    Blanchet, D.; Fontaine, B.

    2012-07-01

    Current design studies on Sodium Fast Reactor (SFR) differ from those performed in the past by the fact that design criteria are now those of the Generation IV reactors. In order to improve their safety, reactors with break-even cores are preferred because they minimize the needs in terms of reactivity control and limit the consequences of control rod withdrawal. Furthermore, as the reactivity control needs are low, break-even core enables the use of absorbing materials with reduced efficiency (natural boron, hafnium...). Nevertheless, the use of control rods with few absorbing materials may present the disadvantage of a non-negligible ({approx}10%) loss of efficiency due to their consumption under irradiation. This paper presents a methodology to calculate accurately and analyze this consumption. (authors)

  7. Microstructural evolution during solution treatment of Co-Cr-Mo-C biocompatible alloys

    SciTech Connect (OSTI)

    Giacchi, J.V.; Fornaro, O.; Palacio, H.

    2012-06-15

    Three different Co-Cr-Mo-C alloys conforming to ASTM F75 standard were poured in an industrial environment and subjected to a conventional solution treatment at 1225 Degree-Sign C for several time intervals. The microstructural changes and transformations were studied in each case in order to evaluate the way in which treatment time influences the secondary phase fraction and clarify the microstructural changes that could occur. To assess how treatment time affects microstructure, optical microscopy and image analyzer software, scanning electron microscopy and energy dispersion spectrometry analysis were employed. The main phases detected in the as-cast state were: {sigma}-phase, M{sub 6}C, and M{sub 23}C{sub 6} carbides. The latter presented two different morphologies, blocky type and lamellar type. Despite being considered the most detrimental feature to mechanical properties, {sigma}-phase and lamellar carbides dissolution took place in the early stages of solution treatment. M{sub 23}C{sub 6} carbides featured two different behaviors. In the alloy obtained by melting an appropriate quantity of alloyed commercial materials, a decrease in size, spheroidization and transformation into M{sub 6}C carbides were simultaneously observed. In the commercial ASTM F75 alloy, in turn, despite being the same phase, only a marked decrease in precipitates size was noticed. These different behaviors could be ascribed to the initial presence of other phases in the alloy obtained from alloyed materials, such as {sigma}-phase and 'pearlitic' carbides, or to the initial precipitate size which was much larger in the first than in the commercial ASTM F75 alloy studied. M{sub 6}C carbides dissolved directly in the matrix as they could not be detected in samples solution-treated for 15 min. - Highlights: Black-Right-Pointing-Pointer Three different Co-Cr-Mo alloys were poured under an industrial environment. Black-Right-Pointing-Pointer Transformation of existing phases followed during conventional solution treatment. Black-Right-Pointing-Pointer In as-cast/treated samples, phases were identified by color metallography, SEM and EDS. Black-Right-Pointing-Pointer M{sub 23}C{sub 6} {yields} M{sub 6}C transformation was corroborated by SEM and EDS analysis. Black-Right-Pointing-Pointer Carbide spheroidization was also detected prior a noticeably carbide size decreasing.

  8. Microwave coupler and method

    DOE Patents [OSTI]

    Holcombe, C.E.

    1984-11-29

    The present invention is directed to a microwave coupler for enhancing the heating or metallurgical treatment of materials within a cold-wall, rapidly heated cavity as provided by a microwave furnace. The coupling material of the present invention is an alpha-rhombohedral-boron-derivative-structure material such as boron carbide or boron silicide which can be appropriately positioned as a susceptor within the furnace to heat other material or be in powder particulate form so that composites and structures of boron carbide such as cutting tools, grinding wheels and the like can be rapidly and efficiently formed within microwave furnaces.

  9. Method for joining ceramic shapes

    DOE Patents [OSTI]

    Rabin, Barry H. (Idaho Falls, ID)

    1992-01-01

    A method for joining shapes of ceramic materials together to form a unitary ceramic structure. In the method of the invention, a mixture of two or more chemical components which will react exothermically is placed between the surfaces to be joined, and the joined shapes heated to a temperature sufficient to initiate the exothermic reaction forming a joining material which acts to bond the shapes together. Reaction materials are chosen which will react exothermically at temperatures below the degradation temperature of the materials to be joined. The process is particularly suited for joining composite materials of the silicon carbide-silicon carbide fiber type.

  10. Disc valve for sampling erosive process streams

    DOE Patents [OSTI]

    Mrochek, J.E.; Dinsmore, S.R.; Chandler, E.W.

    1986-01-07

    A four-port disc valve is described for sampling erosive, high temperature process streams. A rotatable disc defining opposed first and second sampling cavities rotates between fired faceplates defining flow passageways positioned to be alternatively in axial alignment with the first and second cavities. Silicon carbide inserts and liners composed of [alpha] silicon carbide are provided in the faceplates and in the sampling cavities to limit erosion while providing lubricity for a smooth and precise operation when used under harsh process conditions. 1 fig.

  11. Nano powders, components and coatings by plasma technique

    DOE Patents [OSTI]

    McKechnie, Timothy N. (Brownsboro, AL); Antony, Leo V. M. (Huntsville, AL); O'Dell, Scott (Arab, AL); Power, Chris (Guntersville, AL); Tabor, Terry (Huntsville, AL)

    2009-11-10

    Ultra fine and nanometer powders and a method of producing same are provided, preferably refractory metal and ceramic nanopowders. When certain precursors are injected into the plasma flame in a reactor chamber, the materials are heated, melted and vaporized and the chemical reaction is induced in the vapor phase. The vapor phase is quenched rapidly to solid phase to yield the ultra pure, ultra fine and nano product. With this technique, powders have been made 20 nanometers in size in a system capable of a bulk production rate of more than 10 lbs/hr. The process is particularly applicable to tungsten, molybdenum, rhenium, tungsten carbide, molybdenum carbide and other related materials.

  12. Friction stir weld tools having fine grain structure

    DOE Patents [OSTI]

    Grant, Glenn J.; Frye, John G.; Kim, Jin Yong; Lavender, Curt A.; Weil, Kenneth Scott

    2016-03-15

    Tools for friction stir welding can be made with fewer process steps, lower cost techniques, and/or lower cost ingredients than other state-of-the-art processes by utilizing improved compositions and processes of fabrication. Furthermore, the tools resulting from the improved compositions and processes of fabrication can exhibit better distribution and homogeneity of chemical constituents, greater strength, and/or increased durability. In one example, a friction stir weld tool includes tungsten and rhenium and is characterized by carbide and oxide dispersoids, by carbide particulates, and by grains that comprise a solid solution of the tungsten and rhenium. The grains do not exceed 10 micrometers in diameter.

  13. Fully ceramic nuclear fuel and related methods

    DOE Patents [OSTI]

    Venneri, Francesco; Katoh, Yutai; Snead, Lance Lewis

    2016-03-29

    Various embodiments of a nuclear fuel for use in various types of nuclear reactors and/or waste disposal systems are disclosed. One exemplary embodiment of a nuclear fuel may include a fuel element having a plurality of tristructural-isotropic fuel particles embedded in a silicon carbide matrix. An exemplary method of manufacturing a nuclear fuel is also disclosed. The method may include providing a plurality of tristructural-isotropic fuel particles, mixing the plurality of tristructural-isotropic fuel particles with silicon carbide powder to form a precursor mixture, and compacting the precursor mixture at a predetermined pressure and temperature.

  14. Method for the generation of variable density metal vapors which bypasses the liquidus phase

    DOE Patents [OSTI]

    Kunnmann, Walter (Stony Brook, NY); Larese, John Z. (Rocky Point, NY)

    2001-01-01

    The present invention provides a method for producing a metal vapor that includes the steps of combining a metal and graphite in a vessel to form a mixture; heating the mixture to a first temperature in an argon gas atmosphere to form a metal carbide; maintaining the first temperature for a period of time; heating the metal carbide to a second temperature to form a metal vapor; withdrawing the metal vapor and the argon gas from the vessel; and separating the metal vapor from the argon gas. Metal vapors made using this method can be used to produce uniform powders of the metal oxide that have narrow size distribution and high purity.

  15. High efficiency, oxidation resistant radio frequency susceptor

    DOE Patents [OSTI]

    Besmann, Theodore M.; Klett, James W.

    2004-10-26

    An article and method of producing an article for converting energy from one form to another having a pitch-derived graphitic foam carbon foam substrate and a single layer coating applied to all exposed surfaces wherein the coating is either silicon carbide or carbides formed from a Group IVA metal. The article is used as fully coated carbon foam susceptors that more effectively absorb radio frequency (RF) band energy and more effectively convert the RF energy into thermal band energy or sensible heat. The essentially non-permeable coatings also serve as corrosion or oxidation resistant barriers.

  16. Carocal

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Large Area SiC Gate Turn Off (GTO) Thyristor Development Sid Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh ranbir.singh@genesicsemi.com GeneSiC Semiconductor Inc. 43670 Trade Center Place Suite 155, Dulles VA 20166 703-996-8200 (ph) The support of Drs. I. Gyuk and S. Atcitty is greatly acknowledged for supporting this work under DOE's SBIR Grant DE-FG02-ER84712 Slide 2 Why Silicon Carbide Power Devices? Property - Silicon Carbide vs Silicon Performance of SiC Power Device Impact AC-DC/

  17. Final Report on Actinide Glass Scintillators for Fast Neutron Detection

    SciTech Connect (OSTI)

    Bliss, Mary; Stave, Jean A.

    2012-10-01

    This is the final report of an experimental investigation of actinide glass scintillators for fast-neutron detection. It covers work performed during FY2012. This supplements a previous report, PNNL-20854 Initial Characterization of Thorium-loaded Glasses for Fast Neutron Detection (October 2011). The work in FY2012 was done with funding remaining from FY2011. As noted in PNNL-20854, the glasses tested prior to July 2011 were erroneously identified as scintillators. The decision was then made to start from scratch with a literature survey and some test melts with a non-radioactive glass composition that could later be fabricated with select actinides, most likely thorium. The normal stand-in for thorium in radioactive waste glasses is cerium in the same oxidation state. Since cerium in the 3+ state is used as the light emitter in many scintillating glasses, the next most common substitute was used: hafnium. Three hafnium glasses were melted. Two melts were colored amber and a third was clear. It barely scintillated when exposed to alpha particles. The uses and applications for a scintillating fast neutron detector are important enough that the search for such a material should not be totally abandoned. This current effort focused on actinides that have very high neutron capture energy releases but low neutron capture cross sections. This results in very long counting times and poor signal to noise when working with sealed sources. These materials are best for high flux applications and access to neutron generators or reactors would enable better test scenarios. The total energy of the neutron capture reaction is not the only factor to focus on in isotope selection. Many neutron capture reactions result in energetic gamma rays that require large volumes or high densities to detect. If the scintillator is to separate neutrons from gamma rays, the capture reactions should produce heavy particles and few gamma rays. This would improve the detection of a signal for fast neutron capture.

  18. Thermal neutron shield and method of manufacture

    DOE Patents [OSTI]

    Metzger, Bert Clayton; Brindza, Paul Daniel

    2014-03-04

    A thermal neutron shield comprising boron shielding panels with a high percentage of the element Boron. The panel is least 46% Boron by weight which maximizes the effectiveness of the shielding against thermal neutrons. The accompanying method discloses the manufacture of boron shielding panels which includes enriching the pre-cursor mixture with varying grit sizes of Boron Carbide.

  19. CX-011468: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory

  20. Ultracapacitor current collector

    DOE Patents [OSTI]

    Jerabek, Elihu Calfin (Glenmont, NY); Mikkor, Mati (Ann Arbor, MI)

    2001-10-16

    An ultracapacitor having two solid, nonporous current collectors, two porous electrodes separating the collectors, a porous separator between the electrodes and an electrolyte occupying the pores in the electrodes and separator. At least one of the current collectors comprises a conductive metal substrate coated with a metal nitride, carbide or boride coating.

  1. Silylene- and disilyleneacetylene polymers from trichloroethylene

    DOE Patents [OSTI]

    Barton, Thomas J.; Ijadi-Maghsoodi, Sina

    1990-07-10

    Organosilane polymers having recurring silyleneacetylene and/or disilyleneacetylene units are prepared in a one-pot synthesis from trichloroethylene. Depending on the organic substituents (R and R'), these polymers have useful film-forming properties, and are converted to the ceramic, silicon carbide upon heating in very uniform high yields. They can also be pulled into fibers.

  2. Silylene- and disilyleneacetylene polymers from trichloroethylene

    DOE Patents [OSTI]

    Barton, T.J.; Ijadi-Maghsoodi, S.

    1990-07-10

    Organosilane polymers having recurring silyleneacetylene and/or disilyleneacetylene units are prepared in a one-pot synthesis from trichloroethylene. Depending on the organic substituents (R and R[prime]), these polymers have useful film-forming properties, and are converted to the ceramic, silicon carbide upon heating in very uniform high yields. They can also be pulled into fibers.

  3. Stable catalyst layers for hydrogen permeable composite membranes

    DOE Patents [OSTI]

    Way, J. Douglas; Wolden, Colin A

    2014-01-07

    The present invention provides a hydrogen separation membrane based on nanoporous, composite metal carbide or metal sulfide coated membranes capable of high flux and permselectivity for hydrogen without platinum group metals. The present invention is capable of being operated over a broad temperature range, including at elevated temperatures, while maintaining hydrogen selectivity.

  4. CX-002353: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Research and Development of a Silicon Carbide Fault Current Limiter (SSFCL)CX(s) Applied: B3.6Date: 05/10/2010Location(s): Fayetteville, ArkansasOffice(s): Electricity Delivery and Energy Reliability, National Energy Technology Laboratory

  5. Thermal neutron shield and method of manufacture

    DOE Patents [OSTI]

    Brindza, Paul Daniel; Metzger, Bert Clayton

    2013-05-28

    A thermal neutron shield comprising concrete with a high percentage of the element Boron. The concrete is least 54% Boron by weight which maximizes the effectiveness of the shielding against thermal neutrons. The accompanying method discloses the manufacture of Boron loaded concrete which includes enriching the concrete mixture with varying grit sizes of Boron Carbide.

  6. CX-011365: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Innovative Coating of Nanostructured Vanadium Carbide on the F/M Cladding Tube Inner Surface for Mitigating the Fuel Cladding Chemical Interactions CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Idaho Offices(s): Idaho Operations Office

  7. O A K RIDGE N A T I O N A L LABORATORY

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    operated by UNION CARBIDE CORPORATION N U C LEA R D IV ISIO N for the U.S. ATOMIC ENERGY C O M M ISSIO N O R N L - T M - 3260 m o < '1 j ' j n MULTIPLE-WINDOW SPECTKOMETRY FOR...

  8. CX-004008: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Commercialization of Silicon Carbide Power Modules for High Performance Energy ApplicationsCX(s) Applied: B3.6, B5.1Date: 09/17/2010Location(s): Fayetteville, ArkansasOffice(s): Energy Efficiency and Renewable Energy

  9. Photovoltaic cell

    DOE Patents [OSTI]

    Gordon, Roy G.; Kurtz, Sarah

    1984-11-27

    In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

  10. Disc valve for sampling erosive process streams

    DOE Patents [OSTI]

    Mrochek, J.E.; Dinsmore, S.R.; Chandler, E.W.

    1984-08-16

    This is a patent for a disc-type, four-port sampling valve for service with erosive high temperature process streams. Inserts and liners of ..cap alpha..-silicon carbide respectively, in the faceplates and in the sampling cavities, limit erosion while providing lubricity for a smooth and precise operation. 1 fig.

  11. High- and low-temperature-stable thermite composition for producing high-pressure, high-velocity gases

    DOE Patents [OSTI]

    Halcomb, Danny L. (Camden, OH); Mohler, Jonathan H. (Spring Valley, OH)

    1990-10-16

    A high- and low-temperature-stable thermite composition for producing high-pressure and high-velocity gases comprises an oxidizable metal, an oxidizing reagent, and a high-temperature-stable gas-producing additive selected from the group consisting of metal carbides and metal nitrides.

  12. CX-010974: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

  13. CX-010973: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

  14. Microwave sintering of multiple articles

    DOE Patents [OSTI]

    Blake, Rodger D. (Santa Fe, NM); Katz, Joel D. (Los Alamos, NM)

    1993-01-01

    Apparatus and method for producing articles of alumina and of alumina and silicon carbide in which the articles are sintered at high temperatures using microwave radiation. The articles are placed in a sintering container which is placed in a microwave cavity for heating. The rates at which heating and cooling take place is controlled.

  15. Synthesis of bulk superhard semiconducting B-C material

    SciTech Connect (OSTI)

    Solozhenko, Vladimir L.; Dubrovinskaia, Natalia A.; Dubrovinsky, Leonid S.

    2004-08-30

    A bulk composite superhard material was synthesized from graphitelike BC{sub 3} at 20 GPa and 2300 K using a multianvil press. The material consists of intergrown boron carbide B{sub 4}C and B-doped diamond with 1.8 at.%B. The material exhibits semiconducting behavior and extreme hardness comparable with that of single-crystal diamond.

  16. Ceramic Technology Project database: March 1990 summary report

    SciTech Connect (OSTI)

    Keyes, B.L.P.

    1992-07-01

    This report is the fifth in a series of semiannual data summary reports on information being stored in the Ceramic Technology Project (CTP) database. The overall system status as of March 31, 1990, is summarized, and the latest additions of ceramic mechanical properties data are given for zirconia, silicon carbide, and silicon nitride ceramic mechanical properties data, including some properties on brazed specimens.

  17. Ceramic Technology Project database: March 1990 summary report. DOE/ORNL Ceramic Technology Project

    SciTech Connect (OSTI)

    Keyes, B.L.P.

    1992-07-01

    This report is the fifth in a series of semiannual data summary reports on information being stored in the Ceramic Technology Project (CTP) database. The overall system status as of March 31, 1990, is summarized, and the latest additions of ceramic mechanical properties data are given for zirconia, silicon carbide, and silicon nitride ceramic mechanical properties data, including some properties on brazed specimens.

  18. Abnormal grain growth in AISI 304L stainless steel

    SciTech Connect (OSTI)

    Shirdel, M.; Mirzadeh, H.; Parsa, M.H.

    2014-11-15

    The microstructural evolution during abnormal grain growth (secondary recrystallization) in 304L stainless steel was studied in a wide range of annealing temperatures and times. At relatively low temperatures, the grain growth mode was identified as normal. However, at homologous temperatures between 0.65 (850 C) and 0.7 (900 C), the observed transition in grain growth mode from normal to abnormal, which was also evident from the bimodality in grain size distribution histograms, was detected to be caused by the dissolution/coarsening of carbides. The microstructural features such as dispersed carbides were characterized by optical metallography, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, and microhardness. Continued annealing to a long time led to the completion of secondary recrystallization and the subsequent reappearance of normal growth mode. Another instance of abnormal grain growth was observed at homologous temperatures higher than 0.8, which may be attributed to the grain boundary faceting/defaceting phenomenon. It was also found that when the size of abnormal grains reached a critical value, their size will not change too much and the grain growth behavior becomes practically stagnant. - Highlights: Abnormal grain growth (secondary recrystallization) in AISI 304L stainless steel Exaggerated grain growth due to dissolution/coarsening of carbides The enrichment of carbide particles by titanium Abnormal grain growth due to grain boundary faceting at very high temperatures The stagnancy of abnormal grain growth by annealing beyond a critical time.

  19. Processing and mechanical behavior of hypereutectoid steel wires

    SciTech Connect (OSTI)

    Lesuer, D.R.; Syn, C.K.; Sherby, O.D.; Kim, D.K.

    1996-06-25

    Hypereutectoid steels have the potential for dramatically increasing the strength of wire used in tire cord and in other high strength wire applications. The basis for this possible breakthrough is the elimination of a brittle proeutectoid network that can form along grain boundaries if appropriate processing procedures and alloy additions are used. A review is made of work done by Japanese and other researchers on eutectoid and mildly hypereutectoid wires. A linear extrapolation of the tensile strength of fine wires predicts higher strengths at higher carbon contents. The influence of processing, alloy additions and carbon content in optimizing the strength, ductility and fracture behavior of hypereutectoid steels is presented. It is proposed that the tensile strength of pearlitic wires is dictated by the fracture strength of the carbide lamella at grain boundary locations in the carbide. Methods to improve the strength of carbide grain boundaries and to decrease the carbide plate thickness will contribute to enhancing the ultrahigh strength obtainable in hypereutectoid steel wires. 23 refs., 13 figs., 1 tab.

  20. Lightweight high performance ceramic material

    DOE Patents [OSTI]

    Nunn, Stephen D [Knoxville, TN

    2008-09-02

    A sintered ceramic composition includes at least 50 wt. % boron carbide and at least 0.01 wt. % of at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy Ho, Er, Tm, Yb, and Lu, the sintered ceramic composition being characterized by a density of at least 90% of theoretical density.

  1. High Density Infrared (HDI) Transient Liquid Coatings for Improved Wear and Corrosion Resistance

    SciTech Connect (OSTI)

    Ronald W. Smith

    2007-07-05

    This report documents a collaborative effort between Oak Ridge National Laboratory (ORNL), Materials Resources International and an industry team of participants to develop, evaluate and understand how high density infrared heating technology could be used to improve infiltrated carbide wear coatings and/or to densify sprayed coatings. The research included HDI fusion evaluations of infiltrated carbide suspensions such (BrazeCoat S), composite suspensions with tool steel powders, thermally sprayed Ni-Cr- B-Si (self fluxing alloy) and nickel powder layers. The applied work developed practical HDI / transient liquid coating (TLC) procedures on test plates that demonstrated the ability to fuse carbide coatings for industrial applications such as agricultural blades, construction and mining vehicles. Fundamental studies helped create process models that led to improved process understanding and control. The coating of agricultural blades was demonstrated and showed the HDI process to have the ability to fuse industrial scale components. Sliding and brasive wear tests showed that high degree of wear resistance could be achieved with the addition of tool steel powders to carbide particulate composites.

  2. Molybdenum disilicide matrix composite

    DOE Patents [OSTI]

    Petrovic, John J. (Los Alamos, NM); Carter, David H. (Los Alamos, NM); Gac, Frank D. (Los Alamos, NM)

    1991-01-01

    A composition consisting of an intermetallic compound, molybdenum disilicide, which is reinforced with VS silicon carbide whiskers dispersed throughout it and a method of making the reinforced composition. Use of the reinforcing material increases fracture toughness at low temperatures and strength at high temperatures, as compared to pure molybdenum disilicide.

  3. Molybdenum disilicide matrix composite

    DOE Patents [OSTI]

    Petrovic, John J. (Los Alamos, NM); Carter, David H. (Los Alamos, NM); Gac, Frank D. (Los Alamos, NM)

    1990-01-01

    A composition consisting of an intermetallic compound, molybdenum disilicide, which is reinforced with VS silicon carbide whiskers dispersed throughout it and a method of making the reinforced composition. Use of the reinforcing material increases fracture toughness at low temperatures and strength at high temperatures, as compared to pure molybdenum disilicide.

  4. Effect of interfacial interactions on the thermal conductivity and interfacial thermal conductance in tungstengraphene layered structure

    SciTech Connect (OSTI)

    Jagannadham, K.

    2014-09-01

    Graphene film was deposited by microwave plasma assisted deposition on polished oxygen free high conductivity copper foils. Tungstengraphene layered film was formed by deposition of tungsten film by magnetron sputtering on the graphene covered copper foils. Tungsten film was also deposited directly on copper foil without graphene as the intermediate film. The tungstengraphenecopper samples were heated at different temperatures up to 900?C in argon atmosphere to form an interfacial tungsten carbide film. Tungsten film deposited on thicker graphene platelets dispersed on silicon wafer was also heated at 900?C to identify the formation of tungsten carbide film by reaction of tungsten with graphene platelets. The films were characterized by scanning electron microscopy, Raman spectroscopy, and x-ray diffraction. It was found that tungsten carbide film formed at the interface upon heating only above 650?C. Transient thermoreflectance signal from the tungsten film surface on the samples was collected and modeled using one-dimensional heat equation. The experimental and modeled results showed that the presence of graphene at the interface reduced the cross-plane effective thermal conductivity and the interfacial thermal conductance of the layer structure. Heating at 650 and 900?C in argon further reduced the cross-plane thermal conductivity and interface thermal conductance as a result of formation nanocrystalline tungsten carbide at the interface leading to separation and formation of voids. The present results emphasize that interfacial interactions between graphene and carbide forming bcc and hcp elements will reduce the cross-plane effective thermal conductivity in composites.

  5. In-Bed Accountability Development for a Passively Cooled, Electrically Heated Hydride (PACE) Bed

    SciTech Connect (OSTI)

    Klein, J.E.

    2005-07-15

    A nominal 1500 STP-L PAssively Cooled, Electrically heated hydride (PACE) Bed has been developed for implementation into a new Savannah River Site tritium project. The 1.2 meter (four-foot) long process vessel contains on internal 'U-tube' for tritium In-Bed Accountability (IBA) measurements. IBA will be performed on six, 12.6 kg production metal hydride storage beds.IBA tests were done on a prototype bed using electric heaters to simulate the radiolytic decay of tritium. Tests had gas flows from 10 to 100 SLPM through the U-tube or 100 SLPM through the bed's vacuum jacket. IBA inventory measurement errors at the 95% confidence level were calculated using the correlation of IBA gas temperature rise, or (hydride) bed temperature rise above ambient temperature, versus simulated tritium inventory.Prototype bed IBA inventory errors at 100 SLPM were the largest for gas flows through the vacuum jacket: 15.2 grams for the bed temperature rise and 11.5 grams for the gas temperature rise. For a 100 SLPM U-tube flow, the inventory error was 2.5 grams using bed temperature rise and 1.6 grams using gas temperature rise. For 50 to 100 SLPM U-tube flows, the IBA gas temperature rise inventory errors were nominally one to two grams that increased above four grams for flows less than 50 SLPM. For 50 to 100 SLPM U-tube flows, the IBA bed temperature rise inventory errors were greater than the gas temperature rise errors, but similar errors were found for both methods at gas flows of 20, 30, and 40 SLPM.Electric heater IBA tests were done for six production hydride beds using a 45 SLPM U-tube gas flow. Of the duplicate runs performed on these beds, five of the six beds produced IBA inventory errors of approximately three grams: consistent with results obtained in the laboratory prototype tests.

  6. In-Bed Accountability Development for a Passively Cooled, Electrically Heated Hydride (PACE) Bed

    SciTech Connect (OSTI)

    KLEIN, JAMES

    2004-10-12

    A nominal 1500 STP-L PAssively Cooled, Electrically heated hydride (PACE) Bed has been developed for implementation into a new Savannah River Site tritium project. The 1.2 meter (four-foot) long process vessel contains an internal ''U-tube'' for tritium In-Bed Accountability (IBA) measurements. IBA will be performed on six, 12.6 kg production metal hydride storage beds. IBA tests were done on a prototype bed using electric heaters to simulate the radiolytic decay of tritium. Tests had gas flows from 10 to 100 SLPM through the U-tube or 100 SLPM through the bed's vacuum jacket. IBA inventory measurement errors at the 95 percent confidence level were calculated using the correlation of IBA gas temperature rise, or (hydride) bed temperature rise above ambient temperature, versus simulated tritium inventory. Prototype bed IBA inventory errors at 100 SLPM were the largest for gas flows through the vacuum jacket: 15.2 grams for the bed temperature rise and 11.5 grams for the gas temperature rise. For a 100 SLPM U-tube flow, the inventory error was 2.5 grams using bed temperature rise and 1.6 grams using gas temperature rise. For 50 to 100 SLPM U-tube flows, the IBA gas temperature rise inventory errors were nominally one to two grams that increased above four grams for flows less than 50 SLPM. For 50 to 100 SLPM U-tube flows, the IBA bed temperature rise inventory errors were greater than the gas temperature rise errors, but similar errors were found for both methods at gas flows of 20, 30, and 40 SLPM. Electric heater IBA tests were done for six production hydride beds using a 45 SLPM U-tube gas flow. Of the duplicate runs performed on these beds, five of the six beds produced IBA inventory errors of approximately three grams: consistent with results obtained in the laboratory prototype tests.

  7. Optimization of Preprocessing and Densification of Sorghum Stover at Full-scale Operation

    SciTech Connect (OSTI)

    Neal A. Yancey; Jaya Shankar Tumuluru; Craig C. Conner; Christopher T. Wright

    2011-08-01

    Transportation costs can be a prohibitive step in bringing biomass to a preprocessing location or biofuel refinery. One alternative to transporting biomass in baled or loose format to a preprocessing location, is to utilize a mobile preprocessing system that can be relocated to various locations where biomass is stored, preprocess and densify the biomass, then ship it to the refinery as needed. The Idaho National Laboratory has a full scale 'Process Demonstration Unit' PDU which includes a stage 1 grinder, hammer mill, drier, pellet mill, and cooler with the associated conveyance system components. Testing at bench and pilot scale has been conducted to determine effects of moisture on preprocessing, crop varieties on preprocessing efficiency and product quality. The INLs PDU provides an opportunity to test the conclusions made at the bench and pilot scale on full industrial scale systems. Each component of the PDU is operated from a central operating station where data is collected to determine power consumption rates for each step in the process. The power for each electrical motor in the system is monitored from the control station to monitor for problems and determine optimal conditions for the system performance. The data can then be viewed to observe how changes in biomass input parameters (moisture and crop type for example), mechanical changes (screen size, biomass drying, pellet size, grinding speed, etc.,), or other variations effect the power consumption of the system. Sorgum in four foot round bales was tested in the system using a series of 6 different screen sizes including: 3/16 in., 1 in., 2 in., 3 in., 4 in., and 6 in. The effect on power consumption, product quality, and production rate were measured to determine optimal conditions.

  8. Application for Permit to Operate a Class III Solid Waste Disposal Site at the Nevada Test Site - U10c Disposal Site

    SciTech Connect (OSTI)

    NSTec Environmental Programs

    2010-08-05

    The NTS is located approximately 105 km (65 mi) northwest of Las Vegas, Nevada. NNSA/NSO is the federal lands management authority for the NTS and NSTec is the Management & Operations contractor. Access on and off the NTS is tightly controlled, restricted, and guarded on a 24-hour basis. The NTS is posted with signs along its entire perimeter. NSTec is the operator of all solid waste disposal sites on the NTS. The U10C Disposal Site is located in the northwest corner of Area 9 at the NTS (Figure 1) and is located in a subsidence crater created by two underground nuclear events, one in October 1962 and another in April 1964. The disposal site opened in 1971 for the disposal of rubbish, refuse, pathological waste, asbestos-containing material, and industrial solid waste. A Notice of Intent form to operate the disposal site as a Class II site was submitted to the state of Nevada on January 26, 1994, and was acknowledged in a letter to the DOE on February 8, 1994. It operated as a state of Nevada Class II Solid Waste Disposal Site (SWDS) until it closed on October 5, 1995, for retrofit as a Class III SWDS. The retrofit consisted of the installation of a minimum four-foot compacted soil layer to segregate the different waste types and function as a liner to inhibit leachate and water flow into the lower waste zone. Five neutron monitoring tubes were installed in this layer to monitor possible leachate production and water activity. Upon acceptance of the installed barrier and approval of an Operating Plan by NDEP/BFF, the site reopened in January 1996 as a Class III SWDS for the disposal of industrial solid waste and other inert waste.

  9. 9 Cr-- 1 Mo steel material for high temperature application

    DOE Patents [OSTI]

    Jablonski, Paul D; Alman, David; Dogan, Omer; Holcomb, Gordon; Cowen, Christopher

    2012-11-27

    One or more embodiments relates to a high-temperature, titanium alloyed, 9 Cr-1 Mo steel exhibiting improved creep strength and oxidation resistance at service temperatures up to 650.degree. C. The 9 Cr-1 Mo steel has a tempered martensite microstructure and is comprised of both large (0.5-3 .mu.m) primary titanium carbides and small (5-50 nm) secondary titanium carbides in a ratio of. from about 1:1.5 to about 1.5:1. The 9 Cr-1 Mo steel may be fabricated using exemplary austenizing, rapid cooling, and tempering steps without subsequent hot working requirements. The 9 Cr-1 Mo steel exhibits improvements in total mass gain, yield strength, and time-to-rupture over ASTM P91 and ASTM P92 at the temperature and time conditions examined.

  10. Coated graphite articles useful in metallurgical processes and method for making same

    DOE Patents [OSTI]

    Holcombe, Cressie E. (Knoxville, TN); Bird, Eugene L. (Knoxville, TN)

    1995-01-01

    Graphite articles including crucibles and molds used in metallurgical processes involving the melting and the handling of molten metals and alloys that are reactive with carbon when in a molten state and at process temperatures up to about 2000.degree. C. are provided with a multiple-layer coating for inhibiting carbon diffusion from the graphite into the molten metal or alloys. The coating is provided by a first coating increment of a carbide-forming metal on selected surfaces of the graphite, a second coating increment of a carbide forming metal and a refractory metal oxide, and a third coating increment of a refractory metal oxide. The second coating increment provides thermal shock absorbing characteristics to prevent delamination of the coating during temperature cycling. A wash coat of unstabilized zirconia or titanium nitride can be applied onto the third coating increment to facilitate release of melts from the coating.

  11. High resolution interface nanochemistry and structure: Final project report, December 1, 1993--February 28, 1997

    SciTech Connect (OSTI)

    Carpenter, R.W.; Lin, S.H.

    1997-02-27

    Work includes studies of interface and grain boundary chemistry and structure in silicon nitride matrix/silicon carbide whisker composites, and in monolithic silicon nitride and silicon carbide synthesized by several different methods. Off-stoichiometric, impurity, and sintering aid elemental distributions in these materials (and other ceramics) have been of great interest because of expected effects on properties but these distributions have proven very difficult to measure because the spatial resolution required is high. The authors made a number of these measurements for the first time, using techniques and instrumentation developed here. Interfaces between metals and SiC are the basis for important metal matrix composites and contacts for high temperature SiC-based solid state electronic devices. The authors have investigated ultrapure interfaces between Ti, Hf, Ti-Hf alloys, Pt, and Co and Si-terminated (0001) 6H SiC single crystals for the first time.

  12. Low friction and galling resistant coatings and processes for coating

    DOE Patents [OSTI]

    Johnson, Roger N. (Richland, WA)

    1987-01-01

    The present invention describes coating processes and the resultant coated articles for use in high temperature sodium environments, such as those found in liquid metal fast breeder reactors and their associated systems. The substrate to which the coating is applied may be either an iron base or nickel base alloy. The coating itself is applied to the substrate by electro-spark deposition techniques which result in metallurgical bonding between the coating and the substrate. One coating according to the present invention involves electro-spark depositing material from a cemented chromium carbide electrode and an aluminum electrode. Another coating according to the present invention involves electro-spark depositing material from a cemented chromium carbide electrode and a nickel-base hardfacing alloy electrode.

  13. Radiation shielding materials and containers incorporating same

    DOE Patents [OSTI]

    Mirsky, Steven M. (Greenbelt, MD); Krill, Stephen J. (Arlington, VA); Murray, Alexander P. (Gaithersburg, MD)

    2005-11-01

    An improved radiation shielding material and storage systems for radioactive materials incorporating the same. The PYRolytic Uranium Compound ("PYRUC") shielding material is preferably formed by heat and/or pressure treatment of a precursor material comprising microspheres of a uranium compound, such as uranium dioxide or uranium carbide, and a suitable binder. The PYRUC shielding material provides improved radiation shielding, thermal characteristic, cost and ease of use in comparison with other shielding materials. The shielding material can be used to form containment systems, container vessels, shielding structures, and containment storage areas, all of which can be used to house radioactive waste. The preferred shielding system is in the form of a container for storage, transportation, and disposal of radioactive waste. In addition, improved methods for preparing uranium dioxide and uranium carbide microspheres for use in the radiation shielding materials are also provided.

  14. Lightweight, durable lead-acid batteries

    DOE Patents [OSTI]

    Lara-Curzio, Edgar; An, Ke; Kiggans, Jr., James O; Dudney, Nancy J; Contescu, Cristian I; Baker, Frederick S; Armstrong, Beth L

    2013-05-21

    A lightweight, durable lead-acid battery is disclosed. Alternative electrode materials and configurations are used to reduce weight, to increase material utilization and to extend service life. The electrode can include a current collector having a buffer layer in contact with the current collector and an electrochemically active material in contact with the buffer layer. In one form, the buffer layer includes a carbide, and the current collector includes carbon fibers having the buffer layer. The buffer layer can include a carbide and/or a noble metal selected from of gold, silver, tantalum, platinum, palladium and rhodium. When the electrode is to be used in a lead-acid battery, the electrochemically active material is selected from metallic lead (for a negative electrode) or lead peroxide (for a positive electrode).

  15. Lightweight, durable lead-acid batteries

    DOE Patents [OSTI]

    Lara-Curzio, Edgar; An, Ke; Kiggans, Jr., James O.; Dudney, Nancy J.; Contescu, Cristian I.; Baker, Frederick S.; Armstrong, Beth L.

    2011-09-13

    A lightweight, durable lead-acid battery is disclosed. Alternative electrode materials and configurations are used to reduce weight, to increase material utilization and to extend service life. The electrode can include a current collector having a buffer layer in contact with the current collector and an electrochemically active material in contact with the buffer layer. In one form, the buffer layer includes a carbide, and the current collector includes carbon fibers having the buffer layer. The buffer layer can include a carbide and/or a noble metal selected from of gold, silver, tantalum, platinum, palladium and rhodium. When the electrode is to be used in a lead-acid battery, the electrochemically active material is selected from metallic lead (for a negative electrode) or lead peroxide (for a positive electrode).

  16. Friction surfaced Stellite6 coatings

    SciTech Connect (OSTI)

    Rao, K. Prasad; Damodaram, R.; Rafi, H. Khalid; Ram, G.D. Janaki; Reddy, G. Madhusudhan; Nagalakshmi, R.

    2012-08-15

    Solid state Stellite6 coatings were deposited on steel substrate by friction surfacing and compared with Stellite6 cast rod and coatings deposited by gas tungsten arc and plasma transferred arc welding processes. Friction surfaced coatings exhibited finer and uniformly distributed carbides and were characterized by the absence of solidification structure and compositional homogeneity compared to cast rod, gas tungsten arc and plasma transferred coatings. Friction surfaced coating showed relatively higher hardness. X-ray diffraction of samples showed only face centered cubic Co peaks while cold worked coating showed hexagonally close packed Co also. - Highlights: Black-Right-Pointing-Pointer Stellite6 used as coating material for friction surfacing. Black-Right-Pointing-Pointer Friction surfaced (FS) coatings compared with casting, GTA and PTA processes. Black-Right-Pointing-Pointer Finer and uniformly distributed carbides in friction surfaced coatings. Black-Right-Pointing-Pointer Absence of melting results compositional homogeneity in FS Stellite6 coatings.

  17. Structural Study of SiC Nanoparticles Grown by Inductively Coupled Plasma and Laser Pyrolysis for Nano-structured Ceramics Elaboration

    SciTech Connect (OSTI)

    Leconte, Yann; Portier, Xavier; Herlin-Boime, Nathalie; Reynaud, Cecile

    2008-07-01

    Refractory carbide nano-structured ceramics as SiC constitute interesting materials for high temperature applications and particularly for fourth generation nuclear plants. To elaborate such nano-materials, weighable amounts of SiC nano-powders have to be synthesized first with an accurate control of the grain size and stoichiometry. The inductively coupled plasma and the laser pyrolysis techniques, respectively developed at EMPA Thun and CEA Saclay, allow meeting these requirements. Both techniques are able to produce dozens of grams per hour of silicon carbide nano-powders. The particle size can be adjusted down to around 20 nm for the plasma synthesis and even down to 5-10 nm for the laser pyrolysis. The stoichiometry Si/C can be tuned by the addition of methane into the plasma and acetylene for the laser process. (authors)

  18. Iron-aluminum alloys having high room-temperature and method for making same

    DOE Patents [OSTI]

    Sikka, V.K.; McKamey, C.G.

    1993-08-24

    A wrought and annealed iron-aluminum alloy is described consisting essentially of 8 to 9.5% aluminum, an effective amount of chromium sufficient to promote resistance to aqueous corrosion of the alloy, and an alloying constituent selected from the group of elements consisting of an effective amount of molybdenum sufficient to promote solution hardening of the alloy and resistance of the alloy to pitting when exposed to solutions containing chloride, up to about 0.05% carbon with up to about 0.5% of a carbide former which combines with the carbon to form carbides for controlling grain growth at elevated temperatures, and mixtures thereof, and the balance iron, wherein said alloy has a single disordered [alpha] phase crystal structure, is substantially non-susceptible to hydrogen embrittlement, and has a room-temperature ductility of greater than 20%.

  19. Nanoamorphous carbon-based photonic crystal infrared emitters

    DOE Patents [OSTI]

    Norwood, Robert A. (Tucson, AZ); Skotheim, Terje (Tucson, AZ)

    2011-12-13

    Provided is a tunable radiation emitting structure comprising: a nanoamorphous carbon structure having a plurality of relief features provided in a periodic spatial configuration, wherein the relief features are separated from each other by adjacent recessed features, and wherein the nanoamorphous carbon comprises a total of from 0 to 60 atomic percent of one or more dopants of the dopant group consisting of: transition metals, lanthanoids, electro-conductive carbides, silicides and nitrides. In one embodiment, a dopant is selected from the group consisting of: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La and other lanthanides, Hf, Ta, W, Rh, Os, Ir, Pt, Au, and Hg. In one embodiment, a dopant is selected from the group consisting of: electro-conductive carbides (like Mo.sub.2C), silicides (like MoSi.sub.2) and nitrides (like TiN).

  20. Numerical design of SiC bulk crystal growth for electronic applications

    SciTech Connect (OSTI)

    Wejrzanowski, T.; Grybczuk, M.; Kurzydlowski, K. J.; Tymicki, E.

    2014-10-06

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  1. Current Status and Recent Research Achievements in SiC/SiC Composites

    SciTech Connect (OSTI)

    Katoh, Yutai; Snead, Lance L.; Henager, Charles H.; Nozawa, T.; Hinoki, Tetsuya; Ivekovic, Aljaz; Novak, Sasa; Gonzalez de Vicente, Sehila M.

    2014-12-01

    The development and maturation of the silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen the evolution from fundamental development and understanding of the material system and its behavior in a hostile irradiation environment to the current effort which essentially is a broad-based program of technology, directed at moving this material class from a laboratory curiosity to an engineering material. This paper lays out the recent international scientific and technological achievements in the development of SiC/SiC composite material technologies for fusion application and will discuss future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and for general engineering applications.

  2. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    SciTech Connect (OSTI)

    Silva, Chinthaka M; Katoh, Yutai; Voit, Stewart L; Snead, Lance Lewis

    2015-01-01

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  3. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1989-05-09

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  4. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1987-10-23

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

  5. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, Timothy J.; Ginley, David S.; Zipperian, Thomas E.

    1989-01-01

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  6. Synthesis of transition metal carbonitrides

    DOE Patents [OSTI]

    Munir, Zuhair A. R. (Davis, CA); Eslamloo-Grami, Maryam (Davis, CA)

    1994-01-01

    Transition metal carbonitrides (in particular, titanium carbonitride, TiC.sub.0.5 N.sub.0.5) are synthesized by a self-propagating reaction between the metal (e.g., titanium) and carbon in a nitrogen atmosphere. Complete conversion to the carbonitride phase is achieved with the addition of TiN as diluent and with a nitrogen pressure .gtoreq.0.6 MPa. Thermodynamic phase-stability calculations and experimental characterizations of quenched samples provided revealed that the mechanism of formation of the carbonitride is a two-step process. The first step involves the formation of the nonstoichiometric carbide, TiC.sub.0.5, and is followed by the formation of the product by the incorporation of nitrogen in the defect-structure carbide.

  7. Radiation Shielding Materials and Containers Incorporating Same

    DOE Patents [OSTI]

    Mirsky, Steven M.; Krill, Stephen J.; and Murray, Alexander P.

    2005-11-01

    An improved radiation shielding material and storage systems for radioactive materials incorporating the same. The PYRolytic Uranium Compound (''PYRUC'') shielding material is preferably formed by heat and/or pressure treatment of a precursor material comprising microspheres of a uranium compound, such as uranium dioxide or uranium carbide, and a suitable binder. The PYRUC shielding material provides improved radiation shielding, thermal characteristic, cost and ease of use in comparison with other shielding materials. The shielding material can be used to form containment systems, container vessels, shielding structures, and containment storage areas, all of which can be used to house radioactive waste. The preferred shielding system is in the form of a container for storage, transportation, and disposal of radioactive waste. In addition, improved methods for preparing uranium dioxide and uranium carbide microspheres for use in the radiation shielding materials are also provided.

  8. METHOD OF MAKING FUEL BODIES

    DOE Patents [OSTI]

    Goeddel, W.V.; Simnad, M.T.

    1963-04-30

    This patent relates to a method of making a fuel compact having a matrix of carbon or graphite which carries the carbides of fissile material. A nuclear fuel material selected from the group including uranium and thorium carbides, silicides, and oxides is first mixed both with sufficient finely divided carbon to constitute a matrix in the final product and with a diffusional bonding material selected from the class consisting of zirconium, niobium, molybdenum, titanium, nickel, chromium, and silicon. The mixture is then heated at a temperature of 1500 to 1800 nif- C while maintaining it under a pressure of over about 2,000 pounds per square inch. Preferably, heating is accomplished by the electrical resistance of the compact itself. (AEC)

  9. Alumina-based ceramic composite

    DOE Patents [OSTI]

    Alexander, Kathleen B. (Oak Ridge, TN); Tiegs, Terry N. (Lenoir City, TN); Becher, Paul F. (Oak Ridge, TN); Waters, Shirley B. (Knoxville, TN)

    1996-01-01

    An improved ceramic composite comprising oxide ceramic particulates, nonoxide ceramic particulates selected from the group consisting of carbides, borides, nitrides of silicon and transition metals and mixtures thereof, and a ductile binder selected from the group consisting of metallic, intermetallic alloys and mixtures thereof is described. The ceramic composite is made by blending powders of the ceramic particulates and the ductile to form a mixture and consolidating the mixture of under conditions of temperature and pressure sufficient to produce a densified ceramic composite.

  10. Slick Rock Archived Soil & Groundwater Master Reports | Department of

    Office of Environmental Management (EM)

    Energy Slick Rock Archived Soil & Groundwater Master Reports Slick Rock Archived Soil & Groundwater Master Reports Slick Rock Archived Soil & Groundwater Master Reports PDF icon Slick Rock - Old North Continent PDF icon Slick Rock - Union Carbide More Documents & Publications South Valley Archived Soil & Groundwater Master Reports Weldon Spring Site Archived Soil & Groundwater Master Reports Tuba City Archived Soil & Groundwater Master Reports

  11. Two Novel Ultra-Incompressible Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two Novel Ultra-Incompressible Materials Print Some current challenges in aerospace engineering and fission/fusion applications require materials that are mechanically and chemically stable at extreme conditions. One such class of materials is ultrahigh-temperature ceramics, which are often binary transition-metal carbides, borides, or nitrides. It is therefore of great interest to understand how to synthesize new compounds of this type. A research team from Germany, the United Kingdom, and

  12. Two Novel Ultra-Incompressible Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two Novel Ultra-Incompressible Materials Print Some current challenges in aerospace engineering and fission/fusion applications require materials that are mechanically and chemically stable at extreme conditions. One such class of materials is ultrahigh-temperature ceramics, which are often binary transition-metal carbides, borides, or nitrides. It is therefore of great interest to understand how to synthesize new compounds of this type. A research team from Germany, the United Kingdom, and

  13. Two Novel Ultra-Incompressible Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two Novel Ultra-Incompressible Materials Print Some current challenges in aerospace engineering and fission/fusion applications require materials that are mechanically and chemically stable at extreme conditions. One such class of materials is ultrahigh-temperature ceramics, which are often binary transition-metal carbides, borides, or nitrides. It is therefore of great interest to understand how to synthesize new compounds of this type. A research team from Germany, the United Kingdom, and

  14. Two Novel Ultra-Incompressible Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two Novel Ultra-Incompressible Materials Print Some current challenges in aerospace engineering and fission/fusion applications require materials that are mechanically and chemically stable at extreme conditions. One such class of materials is ultrahigh-temperature ceramics, which are often binary transition-metal carbides, borides, or nitrides. It is therefore of great interest to understand how to synthesize new compounds of this type. A research team from Germany, the United Kingdom, and

  15. Two Novel Ultra-Incompressible Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two Novel Ultra-Incompressible Materials Print Some current challenges in aerospace engineering and fission/fusion applications require materials that are mechanically and chemically stable at extreme conditions. One such class of materials is ultrahigh-temperature ceramics, which are often binary transition-metal carbides, borides, or nitrides. It is therefore of great interest to understand how to synthesize new compounds of this type. A research team from Germany, the United Kingdom, and

  16. Two Novel Ultra-Incompressible Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two Novel Ultra-Incompressible Materials Two Novel Ultra-Incompressible Materials Print Wednesday, 29 June 2011 00:00 Some current challenges in aerospace engineering and fission/fusion applications require materials that are mechanically and chemically stable at extreme conditions. One such class of materials is ultrahigh-temperature ceramics, which are often binary transition-metal carbides, borides, or nitrides. It is therefore of great interest to understand how to synthesize new compounds

  17. Environmental barrier coating

    DOE Patents [OSTI]

    Pujari, Vimal K.; Vartabedian, Ara; Collins, William T.; Woolley, David; Bateman, Charles

    2012-12-18

    The present invention relates generally to a multi-layered article suitable for service in severe environments. The article may be formed of a substrate, such as silicon carbide and/or silicon nitride. The substrate may have a first layer of a mixture of a rare earth silicate and Cordierite. The substrate may also have a second layer of a rare earth silicate or a mixture of a rare earth silicate and cordierite.

  18. Heat treatment giving a stable high temperature micro-structure in cast austenitic stainless steel

    DOE Patents [OSTI]

    Anton, Donald L. (Toland, CT); Lemkey, Franklin D. (Windsor, CT)

    1988-01-01

    A novel micro-structure developed in a cast austenitic stainless steel alloy and a heat treatment thereof are disclosed. The alloy is based on a multicomponent Fe-Cr-Mn-Mo-Si-Nb-C system consisting of an austenitic iron solid solution (.gamma.) matrix reinforced by finely dispersed carbide phases and a heat treatment to produce the micro-structure. The heat treatment includes a prebraze heat treatment followed by a three stage braze cycle heat treatment.

  19. Heat treatment of NiCrFe alloy to optimize resistance to intergrannular stress corrosion

    DOE Patents [OSTI]

    Steeves, Arthur F. (Schenectady, NY); Bibb, Albert E. (Clifton Park, NY)

    1984-01-01

    A process of producing a NiCrFe alloy having a high resistance to stress corrosion cracking comprising heating a NiCrFe alloy to a temperature sufficient to enable the carbon present in the alloy body in the form of carbide deposits to enter into solution, rapidly cool the alloy body, and heat the cooled body to a temperature between 1100.degree. to 1500.degree. F. for about 1 to 30 hours.

  20. Method of making a composite refractory material

    DOE Patents [OSTI]

    Morrow, M.S.; Holcombe, C.E.

    1995-09-26

    A composite refractory material is prepared by combining boron carbide with furan resin to form a mixture containing about 8 wt. % furan resin. The mixture is formed into a pellet which is placed into a grit pack comprising an oxide of an element such as yttrium to form a sinterable body. The sinterable body is sintered under vacuum with microwave energy at a temperature no greater than 2000 C to form a composite refractory material.