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Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang Hi New  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:Greer County is a county inAl., It isOpenForestry, Agriculture

2

Silicone metalization  

DOE Patents [OSTI]

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09T23:59:59.000Z

3

Silicone metalization  

DOE Patents [OSTI]

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2006-12-05T23:59:59.000Z

4

Amorphous Silicon  

Broader source: Energy.gov [DOE]

DOE has a proven track record of funding successes in amorphous silicon (a-Si)research. A list of current projects, summary of the benefits, and discussion on the production and manufacturing of...

5

Silicon nitride/silicon carbide composite powders  

DOE Patents [OSTI]

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Dunmead, Stephen D. (Midland, MI); Weimer, Alan W. (Midland, MI); Carroll, Daniel F. (Midland, MI); Eisman, Glenn A. (Midland, MI); Cochran, Gene A. (Midland, MI); Susnitzky, David W. (Midland, MI); Beaman, Donald R. (Midland, MI); Nilsen, Kevin J. (Midland, MI)

1996-06-11T23:59:59.000Z

6

Buried oxide layer in silicon  

DOE Patents [OSTI]

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

2001-01-01T23:59:59.000Z

7

Advanced silicon photonic modulators  

E-Print Network [OSTI]

Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

Sorace, Cheryl M

2010-01-01T23:59:59.000Z

8

Glass-silicon column  

DOE Patents [OSTI]

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Yu, Conrad M.

2003-12-30T23:59:59.000Z

9

Highly Efficient Silicon Light Emitting Diode  

E-Print Network [OSTI]

silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

10

Micromachined silicon electrostatic chuck  

DOE Patents [OSTI]

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

Anderson, R.A.; Seager, C.H.

1996-12-10T23:59:59.000Z

11

Method for producing silicon nitride/silicon carbide composite  

DOE Patents [OSTI]

Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

Dunmead, Stephen D. (Midland, MI); Weimer, Alan W. (Midland, MI); Carroll, Daniel F. (Midland, MI); Eisman, Glenn A. (Midland, MI); Cochran, Gene A. (Midland, MI); Susnitzky, David W. (Midland, MI); Beaman, Donald R. (Midland, MI); Nilsen, Kevin J. (Midland, MI)

1996-07-23T23:59:59.000Z

12

Structure, defects, and strain in silicon-silicon oxide interfaces  

SciTech Connect (OSTI)

The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

Kova?evi?, Goran, E-mail: gkova@irb.hr; Pivac, Branko [Department of Materials Physics, Rudjer Boskovic Institute, Bijeni?ka 56, P.O.B. 180, HR-10002 Zagreb (Croatia)

2014-01-28T23:59:59.000Z

13

AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION  

E-Print Network [OSTI]

-based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells improved, which may make them suitable for encapsulating solar cells once again. We have recentlyAMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION Aarohi Vijh 1

Deng, Xunming

14

Fabrication of porous silicon membranes  

E-Print Network [OSTI]

OF THE FILTER APPLICATION OF POROUS SILICON A. Density of Porous Silicon B. Stabilization of Porous Silicon Membranes C. Flow Test D. Porous Polycrystalline Silicon 54 58 62 65 vn TABLE OF CONTENTS (Continued) CHAPTER VI EXTENSIONS AND CONCLUSIONS... Membranes 13. Density Change of Porous Silicon at 125'C 14. Density Change oi' Porous Silicon at 250 C 15. Nitrogen Flow on a Porous Silicon Membrane Page 15 16 33 39 39 44 46 54 59 59 62 LIST OF FIGURES Figure 10. 12. 14. 17. 18. 19...

Yue, Wing Kong

1988-01-01T23:59:59.000Z

15

Crystalline Silicon Photovoltaics Research  

Broader source: Energy.gov [DOE]

DOE supports crystalline silicon photovoltaic (PV) research and development efforts that lead to market-ready technologies. Below are a list of the projects, summary of the benefits, and discussion...

16

Optical properties of nanostructured silicon-rich silicon dioxide  

E-Print Network [OSTI]

We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

Stolfi, Michael Anthony

2006-01-01T23:59:59.000Z

17

Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide...

18

Crystalline Silicon Photovolatic Cell Basics  

Broader source: Energy.gov [DOE]

Crystalline silicon cells are made of silicon atoms connected to one another to form a crystal lattice. This lattice comprises the solid material that forms the photovoltaic (PV) cell's...

19

Floating Silicon Method  

SciTech Connect (OSTI)

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Kellerman, Peter

2013-12-21T23:59:59.000Z

20

Electrochemical thinning of silicon  

DOE Patents [OSTI]

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Medernach, John W. (Albuquerque, NM)

1994-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Electrochemical thinning of silicon  

DOE Patents [OSTI]

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Medernach, J.W.

1994-01-11T23:59:59.000Z

22

Amorphous silicon photovoltaic devices  

DOE Patents [OSTI]

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

2004-08-31T23:59:59.000Z

23

Hybrid Silicon Evanescent Lasers John E. Bowersa  

E-Print Network [OSTI]

[2]. Finally a 110 nm thick n-doped InP spacer is used as a bonding interface to silicon. The silicon factors of the silicon waveguide and the QWs can be manipulated by the silicon waveguide dimensions silicon waveguide. For the fabricated waveguide dimensions of a 0.7 µm height (H) and 0.6 µm rib

Bowers, John

24

Amorphous silicon radiation detectors  

DOE Patents [OSTI]

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

1992-01-01T23:59:59.000Z

25

Amorphous silicon radiation detectors  

DOE Patents [OSTI]

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

1992-11-17T23:59:59.000Z

26

Making silicon stronger.  

SciTech Connect (OSTI)

Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

Boyce, Brad Lee

2010-11-01T23:59:59.000Z

27

Diamond-silicon carbide composite  

DOE Patents [OSTI]

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Qian, Jiang; Zhao, Yusheng

2006-06-13T23:59:59.000Z

28

Modified silicon carbide whiskers  

DOE Patents [OSTI]

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, T.N.; Lindemer, T.B.

1991-05-21T23:59:59.000Z

29

Modified silicon carbide whiskers  

DOE Patents [OSTI]

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

1991-01-01T23:59:59.000Z

30

Fabrication and properties of microporous silicon  

E-Print Network [OSTI]

Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

Shao, Jianzhong

1994-01-01T23:59:59.000Z

31

Nanoscale Engineering Of Radiation Tolerant Silicon Carbide....  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Of Radiation Tolerant Silicon Carbide. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide. Abstract: Radiation tolerance is determined by how effectively the...

32

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

McCarthy, Anthony M. (Menlo Park, CA)

1998-06-02T23:59:59.000Z

33

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

McCarthy, A.M.

1996-01-30T23:59:59.000Z

34

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

McCarthy, Anthony M. (Menlo Park, CA)

1996-01-01T23:59:59.000Z

35

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

McCarthy, A.M.

1998-06-02T23:59:59.000Z

36

Photovoltaic Crystalline Silicon Cell Basics  

Broader source: Energy.gov [DOE]

To separate electrical charges, crystalline silicon cells must have a built-in electric field. Light shining on crystalline silicon may free electrons within the crystal lattice, but for these electrons to do useful work—such as provide electricity to a light bulb—they must be separated and directed into an electrical circuit.

37

Recent developments in silicon calorimetry  

SciTech Connect (OSTI)

We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC.

Brau, J.E.

1990-11-01T23:59:59.000Z

38

Ultraviolet selective silicon photodiode  

E-Print Network [OSTI]

(' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe... drpth corresponded to a high& r shor4wav? length rcsponsiv- ity tlirough liis ( xperimcnial diodes with junction dcpl ha ol'0. -'I to 2 0 pm. I indmayer and Allison [4I] I'abri&. ated n+-p solar cells with junction &lcpths of approximately 0. 1, 0. 15...

Chintapalli, Koteswara Rao

1992-01-01T23:59:59.000Z

39

Compensated amorphous silicon solar cell  

DOE Patents [OSTI]

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

1983-01-01T23:59:59.000Z

40

Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells  

E-Print Network [OSTI]

;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

Firestone, Jeremy

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Silicon nitride/silicon carbide composite densified materials prepared using composite powders  

DOE Patents [OSTI]

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

1997-07-01T23:59:59.000Z

42

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

DOE Patents [OSTI]

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

1999-01-01T23:59:59.000Z

43

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

DOE Patents [OSTI]

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

2002-01-01T23:59:59.000Z

44

Crystalline silicon growth in nickel/a-silicon bilayer  

SciTech Connect (OSTI)

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 Degree-Sign C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

Mohiddon, Md Ahamad; Naidu, K. Lakshun [School of Physics, University of Hyderabad, Hyderabad-500046 (India) and Department of Physics, University of Trento, 38123 POVO (Trento) (Italy); Dalba, G. [Department of Physics, University of Trento, 38123 POVO (Trento) (Italy); Rocca, F. [IFN-CNR, Institute for Photonics and Nanotechnologies, Unit FBK-Photonics of Trento, 38123, Trento (Italy); Krishna, M. Ghanashyam [School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2013-02-05T23:59:59.000Z

45

Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices  

E-Print Network [OSTI]

and Photovoltaic Performance . . . . . . . . . . . . . . .Amorphous Silicon as a Photovoltaic Material 2.1.2ii Photovoltaic Model . . . . . . . . . . .

Schriver, Maria Christine

2012-01-01T23:59:59.000Z

46

Silicon nitride ceramic comprising samaria and ytterbia  

DOE Patents [OSTI]

This invention relates to a sintered silicon nitride ceramic comprising samaria and ytterbia for enhanced toughness.

Yeckley, Russell L. (Oakham, MA)

1996-01-01T23:59:59.000Z

47

Process for forming retrograde profiles in silicon  

DOE Patents [OSTI]

A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

1996-01-01T23:59:59.000Z

48

Silicone plesiotherapy molds  

SciTech Connect (OSTI)

Plesiotherapy, the treatment of superficial lesions by radioactive molds has largely been replaced by teletherapy techniques involving high energy photon and electron beams. There are, however, situations for which a short distance type treatment, in one form or another, is superior to any other presently available. Traditionally, molds have taken the form of rigid devices incorporating clamps to attach them to the patient. This ensures a reproducible geometry about a localized region since the molds are applied on a daily basis. To make such devices requires considerable skill and patience. This article describes an alternative method that eliminates the use of cumbersome devices in many situations. Silicone molds made from a plaster cast model have been found suitable for the treatment of surface lesions and especially for lesions in the oral and nasal cavities. With the use of radioactive gold seeds the molds may be left in place for a few days without fear of them moving.

Karolis, C.; Reay-Young, P.S.; Walsh, W.; Velautham, G.

1983-04-01T23:59:59.000Z

49

Concentrator silicon cell research  

SciTech Connect (OSTI)

This project continued the developments of high-efficiency silicon concentrator solar cells with the goal of achieving a cell efficiency in the 26 to 27 percent range at a concentration level of 150 suns of greater. The target efficiency was achieved with the new PERL (passivated emitter, rear locally diffused) cell structure, but only at low concentration levels around 20 suns. The PERL structure combines oxide passivation of both top and rear surfaces of the cells with small area contact to heavily doped regions on the top and rear surfaces. Efficiency in the 22 to 23 percent range was also demonstrated for large-area concentrator cells fabricated with the buried contact solar cell processing sequence, either when combined with prismatic covers or with other innovative approaches to reduce top contact shadowing. 19 refs.

Green, M.A.; Wenham, S.R.; Zhang, F.; Zhao, J.; Wang, A. [New South Wales Univ., Kensington (Australia). Solar Photovoltaic Lab.

1992-04-01T23:59:59.000Z

50

Lithium Ion Battery Performance of Silicon Nanowires With Carbon...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ion Battery Performance of Silicon Nanowires With Carbon Skin . Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin . Abstract: Silicon (Si) nanomaterials have...

51

Rheology of silicon carbide/vinyl ester nanocomposites  

E-Print Network [OSTI]

New York, 1999. SILICON CARBIDE/VINYL ESTER NANOCOMPOSITESRheology of Silicon Carbide/Vinyl Ester NanocompositesABSTRACT: Silicon carbide (SiC) nanoparticles with no

Yong, Virginia; Hahn, H. Thomas

2006-01-01T23:59:59.000Z

52

Method of forming buried oxide layers in silicon  

DOE Patents [OSTI]

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

2000-01-01T23:59:59.000Z

53

Mechanical Dissipation in Silicon Flexures  

E-Print Network [OSTI]

The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92um thick single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to phi = 4.4E-7.

S. Reid; G. Cagnoli; D. R. M. Crooks; J. Hough; P. Murray; S. Rowan; M. M. Fejer; R. Route; S. Zappe

2005-10-28T23:59:59.000Z

54

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents [OSTI]

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

55

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents [OSTI]

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

Kaschmitter, James L. (Pleasanton, CA)

1996-01-01T23:59:59.000Z

56

Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices  

E-Print Network [OSTI]

hydrogen dilution in silane on light induced degradation of hydrogenated amor- phous silicon films for solar photovoltaichydrogen content from 14-22%[76]. Hydrogenated amorphous silicon has promise as a photovoltaic

Schriver, Maria Christine

2012-01-01T23:59:59.000Z

57

Nucleation and solidification of silicon for photovoltaics  

E-Print Network [OSTI]

The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

Appapillai, Anjuli T. (Anjuli Tara)

2010-01-01T23:59:59.000Z

58

System and method for liquid silicon containment  

DOE Patents [OSTI]

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28T23:59:59.000Z

59

Silicon Micromachined Dimensional Calibration Artifact for Mesoscale...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines 1 Silicon Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines 2...

60

System and method for liquid silicon containment  

SciTech Connect (OSTI)

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Copper doped polycrystalline silicon solar cell  

DOE Patents [OSTI]

Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

1981-01-01T23:59:59.000Z

62

Silicon crystal growing by oscillating crucible technique  

DOE Patents [OSTI]

A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

Schwuttke, G.H.; Kim, K.M.; Smetana, P.

1983-08-03T23:59:59.000Z

63

Laser wafering for silicon solar.  

SciTech Connect (OSTI)

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

64

Prealloyed catalyst for growing silicon carbide whiskers  

DOE Patents [OSTI]

A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the .beta. form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.

Shalek, Peter D. (Los Alamos, NM); Katz, Joel D. (Niagara Falls, NY); Hurley, George F. (Los Alamos, NM)

1988-01-01T23:59:59.000Z

65

Process of preparing tritiated porous silicon  

DOE Patents [OSTI]

A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

Tam, S.W.

1997-02-18T23:59:59.000Z

66

Process of preparing tritiated porous silicon  

DOE Patents [OSTI]

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1997-01-01T23:59:59.000Z

67

Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices  

SciTech Connect (OSTI)

SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

Martin U. Pralle; James E. Carey

2010-07-31T23:59:59.000Z

68

Method for processing silicon solar cells  

DOE Patents [OSTI]

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06T23:59:59.000Z

69

Method for processing silicon solar cells  

DOE Patents [OSTI]

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

1997-01-01T23:59:59.000Z

70

Microelectromechanical pump utilizing porous silicon  

DOE Patents [OSTI]

A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

Lantz, Jeffrey W. (Albuquerque, NM); Stalford, Harold L. (Norman, OK)

2011-07-19T23:59:59.000Z

71

Dispersion toughened silicon carbon ceramics  

DOE Patents [OSTI]

Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

Wei, G.C.

1984-01-01T23:59:59.000Z

72

Method for fabricating silicon cells  

DOE Patents [OSTI]

A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

1998-08-11T23:59:59.000Z

73

Method for fabricating silicon cells  

DOE Patents [OSTI]

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11T23:59:59.000Z

74

Narrow band gap amorphous silicon semiconductors  

DOE Patents [OSTI]

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Madan, A.; Mahan, A.H.

1985-01-10T23:59:59.000Z

75

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

SciTech Connect (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [École Polytechnique Fédérale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladière 71, CH-200 Neuchâtel (Switzerland)

2014-04-28T23:59:59.000Z

76

The CDF silicon vertex trigger  

SciTech Connect (OSTI)

The CDF experiment's Silicon Vertex Trigger is a system of 150 custom 9U VME boards that reconstructs axial tracks in the CDF silicon strip detector in a 15 {mu}sec pipeline. SVT's 35 {mu}m impact parameter resolution enables CDF's Level 2 trigger to distinguish primary and secondary particles, and hence to collect large samples of hadronic bottom and charm decays. We review some of SVT's key design features. Speed is achieved with custom VLSI pattern recognition, linearized track fitting, pipelining, and parallel processing. Testing and reliability are aided by built-in logic state analysis and test-data sourcing at each board's input and output, a common inter-board data link, and a universal ''Merger'' board for data fan-in/fan-out. Speed and adaptability are enhanced by use of modern FPGAs.

B. Ashmanskas; A. Barchiesi; A. Bardi

2003-06-23T23:59:59.000Z

77

Spectral Reflectance of Silicon Photodiodes  

E-Print Network [OSTI]

Introduction Silicon photodiodes are among the most popular photodetectors that combine high performance over a wide wavelength range with unparalleled ease of use. High-quality photodiodes, in the form of a trap detector, 1,2 have many significant applications in precision radiometry. Their predictable responsivity in visible and near-infrared ~NIR! wavelengths allows the realization of high-accuracy spectral responsivity scales. 3,4 The spectral responsivity scales can be utilized in, for example, realization of luminous intensity 5,6 and spectral irradiance scales. 7,8 The spectral responsivity of a silicon photodiode is determined by the reflectance of the diode surface r~l! and the internal quantum deficiency d~l!. The values of d~l! and r~l! can be extrapolated 4 by mathematical models. To extrapolate the val

Atte Haapalinna; Petri Kärhä; Erkki Ikonen

78

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies  

DOE Patents [OSTI]

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Blewer, Robert S. (Albuquerque, NM); Gullinger, Terry R. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

79

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer  

E-Print Network [OSTI]

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

Isaacson, David M.

80

Nonlinear absorption in silicon nanocrystals  

SciTech Connect (OSTI)

The nonlinear absorption of light in silicon nanocrystals suspended in glycerol is studied by the Z-scan method. The experimental data are used for calculating the nonlinear absorption coefficient {beta}{sub Si-gl} for silicon nanocrystals in glycerol (with a volume filling factor f=2x10{sup -4}), and the coefficient {beta}{sub Si} for pure silicon with a hypothetical volume filling factor f{approx}1. For the laser radiation wavelength {lambda}=497 nm and the pulse duration {tau}=0.5 ns, these coefficients are {beta}{sub Si-gl}=1.2x10{sup -8} cm W{sup -1} and {beta}{sub Si} =7.36x10{sup -5} cm W{sup -1}, while the corresponding values for {lambda}=532 nm and {tau}=10 ns are {beta}{sub Si-gl}=5.36x10{sup -5} cm W{sup -1} and {beta}{sub Si} =0.25 cm W{sup -1}. Experiments with 540-nm, 20-ps laser pulses performed for two different filling factors equal to 2x10{sup -4} and 3x10{sup -3} gave nonlinear absorption coefficients {beta}{sub Si-gl}=2x10{sup -7} and 3.6x10{sup -6} cm W{sup -1}, respectively. Optical absorption and Raman scattering spectra of silicon nanocrystals are also studied. A theoretical analysis of the experimental results shows that optical absorption can be related to the localisation of photoexcited carriers in the conduction band. The localisation is caused by the action of strong static electric fields on an electron in a nanoparticle. (nonlinear optical phenomena)

Korovin, S B; Orlov, A N; Prokhorov, A M; Pustovoi, V I [Natural Science Center, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation); Konstantaki, M; Couris, S; Koudoumas, E [Foundation for Research and Technology-Hellas (IESL-FORTH), Institute of Electronic Structure and Lasers, Crete (Greece)

2001-09-30T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Silicon Sheets By Redox Assisted Chemical Exfoliation  

E-Print Network [OSTI]

In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure.

Tchalala, Mohamed Rachid; Enriquez, Hanna; Kara, Abdelkader; Lachgar, Abdessadek; Yagoubi, Said; Foy, Eddy; Vega, Enrique; Bendounan, Azzedine; Silly, Mathieu G; Sirotti, Fausto; Nitshe, Serge; Chaudanson, Damien; Jamgotchian, Haik; Aufray, Bernard; Mayne, Andrew J; Dujardin, Gérald; Oughaddou, Hamid

2013-01-01T23:59:59.000Z

82

Diamond-silicon carbide composite and method  

DOE Patents [OSTI]

Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

Zhao, Yusheng (Los Alamos, NM)

2011-06-14T23:59:59.000Z

83

Process for strengthening silicon based ceramics  

SciTech Connect (OSTI)

A process for strengthening silicon based ceramic monolithic materials and composite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400{degrees}C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts, or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

Kim, Hyoun-Ee; Moorhead, A.J.

1991-03-07T23:59:59.000Z

84

Structural alloy with a protective coating containing silicon or silicon-oxide  

DOE Patents [OSTI]

This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

Natesan, K.

1992-01-01T23:59:59.000Z

85

Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin. Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin. Abstract: Silicon (Si) has a...

86

Microstructure and properties of IN SITU toughened silicon carbide  

E-Print Network [OSTI]

IN SITU TOUGHENED SILICON CARBIDE LUTGARD C. DE JONGHE 1,2 ,In Situ Toughened Silicon Carbide Lutgard C. De Jonghe 1,2 ,USA ABSTRACT A silicon carbide with a fracture toughness as

De Jonghe, Lutgard C.; Ritchie, Robert O.; Zhang, Xiao Feng

2003-01-01T23:59:59.000Z

87

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

88

Advanced crystallization techniques of ''solar grade'' silicon  

SciTech Connect (OSTI)

Microstructural, electrical and photovoltaic characteristics of polycristalline silicon solar cells fabricated with silicon ingots containing 5, 100 and 500 ppmw iron are reported and discussed. All silicon ingots were grown by the directional solidification technique in graphite or special quartz molds and doped intentionally with iron, in order to evaluate the potentiality of the D.S. technique when employed with solar silicon feedstocks. Results indicate that structural breakdown limits the amount of the ingot which is usable for solar cells fabrication, but also that efficiencies in excess of 10% are obtained using the ''good'' region of the ingot.

Gasparini, M.; Alessandri, M.; Calligarich, C.; Pizzini, S.; Rava, P.; Redaelli, F.; Sardi, L.

1982-09-01T23:59:59.000Z

89

Innovation and Social Capital in Silicon Valley  

E-Print Network [OSTI]

Innovation and Social Capital in Silicon Valley * BRIEpath from social capital to innovation has been identified.social capital has for economic development and innovation.

Kenney, Martin; Patton, Donald

2003-01-01T23:59:59.000Z

90

Silicon Materials and Devices (Fact Sheet)  

SciTech Connect (OSTI)

This National Center for Photovoltaics sheet describes the capabilities of its silicon materials and devices research. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

91

Silicon Materials and Devices (Fact Sheet)  

SciTech Connect (OSTI)

Capabilities fact sheet for the National Center for Photovoltaics: Silicon Materials and Devices that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

92

Silicon nitride having a high tensile strength  

DOE Patents [OSTI]

A ceramic body comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa.

Pujari, Vimal K. (Northboro, MA); Tracey, Dennis M. (Medfield, MA); Foley, Michael R. (Oxford, MA); Paille, Norman I. (Oxford, MA); Pelletier, Paul J. (Sutton, MA); Sales, Lenny C. (Grafton, MA); Willkens, Craig A. (Worcester, MA); Yeckley, Russell L. (Latrobe, PA)

1998-01-01T23:59:59.000Z

93

Ultralow-Power Silicon Microphotonic Communications Platform  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

second). These peta-scale machines are critical for advanced scientific modelling of climate change, biological simulations, advanced materials, and our Ultralow-Power Silicon...

94

Engineering Metal Impurities in Multicrystalline Silicon Solar...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

from inexpensive low-grade silicon. Artist's impression of an intense beam of synchrotron light striking a solar cell and the resulting fluorescence image of the distribution of...

95

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cracking problem in silicon cell technology," says Budiman. "The ALS provides us with a light that allows us to measure and characterize molecular stress in a very quantitative...

96

Characterization of nitrided silicon-silicon dioxide interfaces  

SciTech Connect (OSTI)

A newly-developed technique for the simultaneous characterization of the oxide-silicon interface properties and of bulk impurities was used for a systematic study of the nitridation process of thin oxides. This technique is based upon surface recombination velocity measurements, and does not require the formation of a capacitor structure, so it is very suitable for the characterization of as-grown interfaces. Oxides grown both in dry and in wet environments were considered, and nitridation processes in N{sub 2}O and in NO were compared to N{sub 2} annealing processes. The effect of nitridation temperature and duration were also studied, and RTO/RTN processes were compared to conventional furnace nitridation processes. Surface recombination velocity was correlated with nitrogen concentration at the oxide-silicon interface obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements. Surface recombination velocity (hence surface state density) decreases with increasing nitrogen pile-up at the oxide-silicon interface, indicating that in nitrided interfaces surface state density is limited by nitridation. NO treatments are much more effective than N{sub 2}O treatments in the formation of nitrogen-rich interface layer and, as a consequence, in surface state reduction. Surface state density was measured in fully processed wafers before and after constant current stress. After a complete device process surface states are annealed out by hydrogen passivation, however they are reactivated by the electrical stress, and surface state results after stress were compared with data of surface recombination velocity in as-processed wafers.

Polignano, M.L.; Alessandri, M.; Brazzelli, D. [and others

2000-07-01T23:59:59.000Z

97

Designing Silicon Nanostructures for High Energy Lithium Ion...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Designing Silicon Nanostructures for High Energy Lithium Ion Battery Anodes Designing Silicon Nanostructures for High Energy Lithium Ion Battery Anodes 2012 DOE Hydrogen and Fuel...

98

Synthesis and Characterization of Silicon Clathrates for Anode...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Silicon Clathrates for Anode Applications in Lithium-Ion Batteries Synthesis and Characterization of Silicon Clathrates for Anode Applications in Lithium-Ion Batteries 2012 DOE...

99

Mesoporous Silicon Sponge as an Anti-Pulverization Structure...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mesoporous Silicon Sponge as an Anti-Pulverization Structure for High-Performance Lithium-ion Battery Anodes. Mesoporous Silicon Sponge as an Anti-Pulverization Structure for...

100

Atomistic modeling of amorphous silicon carbide using a bond...  

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modeling of amorphous silicon carbide using a bond-order potential. Atomistic modeling of amorphous silicon carbide using a bond-order potential. Abstract: Molecular dynamics...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Irradiation-induced defect clustering and amorphization in silicon...  

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Irradiation-induced defect clustering and amorphization in silicon carbide. Irradiation-induced defect clustering and amorphization in silicon carbide. Abstract: Previous computer...

102

Silicon Valley Power and Oklahoma Municipal Power Authority Win...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Silicon Valley Power and Oklahoma Municipal Power Authority Win 2014 Public Power Wind Awards Silicon Valley Power and Oklahoma Municipal Power Authority Win 2014 Public Power Wind...

103

Vehicle Technologies Office Merit Review 2014: Silicon Nanowire...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Technologies Office Merit Review 2014: Silicon Nanowire Anodes for Next Generation Energy Storage Vehicle Technologies Office Merit Review 2014: Silicon Nanowire Anodes for...

104

Silicon Nanostructure-based Technology for Next Generation Energy...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Silicon Nanostructure-based Technology for Next Generation Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2013 DOE Hydrogen and Fuel Cells...

105

Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Office Merit Review 2012: Silicon Nanostructure-based Technology for Next Generation Energy Storage Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure-based...

106

amorphous silicon carbon: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

107

amorphous silicon film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

values previously Hellman, Frances 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

108

amorphous hydrogenated silicon: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Gunther; Baets, Roel 2011-01-01 36 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

109

amorphous silicon epid: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

110

amorphous silicon arrays: Topics by E-print Network  

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amorphous carbon Wang, Zhong L. 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

111

amorphous silicon alloy: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

112

amorphous silicon studied: Topics by E-print Network  

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Yang, Cheng-Chieh 2012-01-01 22 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

113

amorphous silicon films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

values previously Hellman, Frances 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

114

amorphous silicon sensor: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

115

amorphous silicon nanoparticles: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

116

amorphous silicon alloys: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

117

amorphous silicon solar: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

118

amorphous silicon thin: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

values previously Hellman, Frances 6 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

119

amorphous silicon tft: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 20 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

120

amorphous silicon photovoltaic: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

properties Mazur, Eric 20 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

amorphous silicon final: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

122

amorphous silicon diodes: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

123

amorphous silicon surfaces: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

124

amorphous silicon technology: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

technologies is presented. Then 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

125

amorphous silicon electronic: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

technologies is presented. Then 22 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

126

amorphous silicon dioxide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

127

amorphous silicon oxynitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 15 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

128

amorphous silicon schottky: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 13 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

129

amorphous silicon nitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Paris-Sud XI, Universit de 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

130

amorphous silicon layers: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 16 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

131

amorphous silicon detector: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

132

area amorphous silicon: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

133

amorphous silicon measured: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 13 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

134

amorphous silicon deposited: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 23 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

135

amorphous silicon flat: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

136

amorphous silicon modules: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

137

amorphous silicon sensors: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

138

amorphous silicon carbonitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

139

amorphous silicon research: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

140

amorphous silicon prepared: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nominanda, Helinda 2008-10-10 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

amorphous silicon microdisk: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 24 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

142

amorphous silicon germanium: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(Si-I or Ge Wang, Wei Hua 37 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

143

amorphous silicon radiation: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

144

amorphous silicon pixel: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 14 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

145

area silicon sheet: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(ii) an aluminium oxidesilicon nitride stack. The rear contacts to the silicon base% on monocrystalline silicon wafers 1. Among others two loss mechanisms limit the conversion...

146

Silicon Nanostructure-based Technology for Next Generation Energy...  

Broader source: Energy.gov (indexed) [DOE]

Silicon Nanostructure-based Technology for Next Generation Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2012 DOE Hydrogen and Fuel Cells...

147

Hydrogen Bubbles and Formation of Nanoporous Silicon during Electroche...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bubbles and Formation of Nanoporous Silicon during Electrochemical Etching. Hydrogen Bubbles and Formation of Nanoporous Silicon during Electrochemical Etching. Abstract: Many...

148

Heterogeneous lithium niobate photonics on silicon substrates  

E-Print Network [OSTI]

Heterogeneous lithium niobate photonics on silicon substrates Payam Rabiei,1,* Jichi Ma,1 Saeed-confined lithium niobate photonic devices and circuits on silicon substrates is reported based on wafer bonding high- performance lithium niobate microring optical resonators and Mach- Zehnder optical modulators

Fathpour, Sasan

149

Bitcoin and the Age of Bespoke Silicon  

E-Print Network [OSTI]

Bitcoin and the Age of Bespoke Silicon Michael B. Taylor Associate Professor University of California, San Diego #12;This Talk Introduction An Overview of the Bitcoin Cryptocurrency Bitcoin's Computing Evolution Bespoke Silicon #12;Interesting Facts about Bitcoin The most successful digital

Wang, Deli

150

Nitride-bonded silicon carbide composite filter  

SciTech Connect (OSTI)

The objective of this program is to develop and demonstrate an advanced hot gas filter, using ceramic component technology, with enhanced durability to provide increased resistance to thermal fatigue and crack propagation. The material is silicon carbide fiber reinforced nitride bonded silicon carbide.

Thomson, B.N.; DiPietro, S.G.

1995-12-01T23:59:59.000Z

151

Buckeye Silicon | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: EnergyBoston Areais a village inBrownfieldBrussels,Buchtel, Ohio:Silicon Jump

152

Compensated amorphous-silicon solar cell  

DOE Patents [OSTI]

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

Devaud, G.

1982-06-21T23:59:59.000Z

153

Fabricating solar cells with silicon nanoparticles  

DOE Patents [OSTI]

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02T23:59:59.000Z

154

Micro benchtop optics by bulk silicon micromachining  

DOE Patents [OSTI]

Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

2000-01-01T23:59:59.000Z

155

Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix  

SciTech Connect (OSTI)

A moderately low temperature (?800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (?c-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 °C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the ?c-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

Kole, Arindam; Chaudhuri, Partha, E-mail: erpc@iacs.res.in [Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata-700032 (India)

2014-10-15T23:59:59.000Z

156

Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices  

E-Print Network [OSTI]

Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices A thesis presented Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices Eric Mazur James E. Carey III silicon and reports on its first application in optoelectronic devices. Irradia- tion of a silicon surface

Mazur, Eric

157

Surface Modification of Silicone Elastomer Using Perfluorinated Ether  

E-Print Network [OSTI]

of a silicone-coated substrate.29 In addition, higher molecular weight perfluoropolyethers have been included

Chaudhury, Manoj K.

158

Production of high specific activity silicon-32  

DOE Patents [OSTI]

A process for preparation of silicon-32 is provide and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

1994-01-01T23:59:59.000Z

159

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report  

SciTech Connect (OSTI)

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01T23:59:59.000Z

160

Process for forming silicon carbide films and microcomponents  

DOE Patents [OSTI]

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells  

E-Print Network [OSTI]

Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells Xunming Deng and Eric A. Schiff Table of Contents 1 Overview 3 1.1 Amorphous Silicon: The First Bipolar Amorphous Semiconductor 3 1.2 Designs for Amorphous Silicon Solar Cells: A Guided Tour 6

Deng, Xunming

162

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p-layer structure  

E-Print Network [OSTI]

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide Received 30 October 2003; accepted 18 November 2003 We investigated a double silicon-carbide p-layer structure consisting of a undiluted p-type amorphous silicon-carbide (p-a-SiC:H) window layer and a hydrogen

Kim, Yong Jung

163

Manufacture of silicon carbide using solar energy  

DOE Patents [OSTI]

A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1992-01-01T23:59:59.000Z

164

Protein separations using porous silicon membranes  

E-Print Network [OSTI]

charge or as the absence of an electron in the crystal structure of silicon. The properties of boron doped siTicon are exploited experimentally by setting up an etch cell in which one surface of the silicon serves as the anode and by using... terminals located on the top surface of the etch cell. The current to be used in the experiment and the total time were previously calculated to produce the desired average pore size and porous silicon film thickness, respectively. The power source...

Pass, Shannon Marie

1992-01-01T23:59:59.000Z

165

Holey Silicon as an Efficient Thermoelectric Material  

SciTech Connect (OSTI)

This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These ?holey silicon? (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35percent porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit. With a ZT value of 0.4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system.

Tang, Jinyao; Wang, Hung-Ta; Hyun Lee, Dong; Fardy, Melissa; Huo, Ziyang; Russell, Thomas P.; Yang, Peidong

2010-09-30T23:59:59.000Z

166

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

167

E-Print Network 3.0 - aastaks silicon valleysse Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Finding the Fundamentals of Silicon for Advanced... . Microelectronic chips use bulk-silicon wafers to power computers, and silicon is used for increasingly important......

168

A NEW A15 MULTIFILAMENTARY SUPERCONDUCTOR BASED ON THE NIOBIUM-ALUMINUM-SILICON SYSTEM  

E-Print Network [OSTI]

BASED ON THE NIOBIUM-ALUMINUM-SILICON SYSTEM Gary C. Quinnpsi. Photomicrograph of an Aluminum-Silicon eutectic filledmultifilimentary niobium-aluminum-silicon wire, a) sample #

Quinn, G.C.

2011-01-01T23:59:59.000Z

169

amorphous silicon thin-film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

amorphous silicon Kanicki, Jerzy 17 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

170

Electronic properties and reliability of the silicon dioxide / silicon carbide interface.  

E-Print Network [OSTI]

??Silicon carbide has been preferred over other wide band-gap semiconductors for high power applications because of its unique ability to grow a thermal oxide, challenges… (more)

Rozen, John

2008-01-01T23:59:59.000Z

171

High index contrast platform for silicon photonics  

E-Print Network [OSTI]

This thesis focuses on silicon-based high index contrast (HIC) photonics. In addition to mature fiber optics or low index contrast (LIC) platform, which is often referred to as Planar Lightwave Cirrcuit (PLC) or Silica ...

Akiyama, Shoji, 1972-

2004-01-01T23:59:59.000Z

172

Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices  

E-Print Network [OSTI]

film is deposited over the window. . . . . . . . . . . . . . . . . . . . . . . . .A carbon film is deposited over the window. Figure 4.11:films and the silicon is unknown. However, changes in geometry such as varying the window

Schriver, Maria Christine

2012-01-01T23:59:59.000Z

173

Silver transport in CVD silicon carbide  

E-Print Network [OSTI]

Ion implantation and diffusion couple experiments were used to study silver transport through and release from CVD silicon carbide. Results of these experiments show that silver does not migrate via classical diffusion in ...

MacLean, Heather J. (Heather Jean), 1974-

2004-01-01T23:59:59.000Z

174

SAVE THE DATE!!! The Silicon Valley  

E-Print Network [OSTI]

SAVE THE DATE!!! The Silicon Valley 3rd Annual Social Innovation Leadership Forum 2014 (SILF 2014 towards a better tomorrow... Register for the event today! The Social Innovation Leadership Forum (SILF

Su, Xiao

175

Transient analysis of silicon carbide power MOSFET.  

E-Print Network [OSTI]

??This thesis illustrates the transient performance of Silicon carbide (4H-SiC) Power MOSFET. Transient analysis enables the designer to understand the thermal stress the semiconductor device… (more)

Pushpakaran, Bejoy

2012-01-01T23:59:59.000Z

176

Device integration for silicon microphotonic platforms  

E-Print Network [OSTI]

Silicon ULSI compatible, high index contrast waveguides and devices provide high density integration for optical networking and on-chip optical interconnects. Four such waveguide systems were fabricated and analyzed: ...

Lim, Desmond Rodney

2000-01-01T23:59:59.000Z

177

Nano-Optoelectronic Integration on Silicon  

E-Print Network [OSTI]

Crystal Si Nanopillars,” Nano Lett. , vol. 10, no. 11, pp.?V Nanowires on Silicon,” Nano Letters, vol. 4, no. 10, pp.and nanoribbon lasers,” Nano Letters, vol. 4, no. 2, pp.

Chen, Roger

2012-01-01T23:59:59.000Z

178

Silicon cast wafer recrystallization for photovoltaic applications  

E-Print Network [OSTI]

Current industry-standard methods of manufacturing silicon wafers for photovoltaic (PV) cells define the electrical properties of the wafer in a first step, and then the geometry of the wafer in a subsequent step. The ...

Hantsoo, Eerik T. (Eerik Torm)

2008-01-01T23:59:59.000Z

179

Texturization of multicrystalline silicon solar cells  

E-Print Network [OSTI]

A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

Li, Dai-Yin

2010-01-01T23:59:59.000Z

180

SUPPORTING INFORMATION Multicolored vertical silicon nanowires  

E-Print Network [OSTI]

. The nanowires have radii of about 50 nm and are 1 µm long. Light from a Xe arc lamp was focused into an optical on the single crystalline silicon wafer. Inductively coupled plasma- reactive ion etch (STS) was used

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Polycrystalline silicon resistor trimming by laser annealing  

E-Print Network [OSTI]

, and (b) Kelvin resistors. luminum Top oxide Polysilicon Initial oxide ubstrate 26 Fig. 7. Cross sectional view of test cell. an oxidized silicon wafer. The polysilicon was oxidized for passivation, and contact windows were etched for the metal... materials are sfliicon-chrome, nickel-chrome, and tantalum nitride. Another material commonly used for resistors is polycrystalline silicon, or polysilicon. PolysiTicon is used in Metal Oxide Semiconductor (MOS) circuit fabrication as the MOS Field...

Crowley, Robert Terrence

1989-01-01T23:59:59.000Z

182

Sampling Artifacts from Conductive Silicone Tubing  

SciTech Connect (OSTI)

We report evidence that carbon impregnated conductive silicone tubing used in aerosol sampling systems can introduce two types of experimental artifacts: 1) silicon tubing dynamically absorbs carbon dioxide gas, requiring greater than 5 minutes to reach equilibrium and 2) silicone tubing emits organic contaminants containing siloxane that adsorb onto particles traveling through it and onto downstream quartz fiber filters. The consequence can be substantial for engine exhaust measurements as both artifacts directly impact calculations of particulate mass-based emission indices. The emission of contaminants from the silicone tubing can result in overestimation of organic particle mass concentrations based on real-time aerosol mass spectrometry and the off-line thermal analysis of quartz filters. The adsorption of siloxane contaminants can affect the surface properties of aerosol particles; we observed a marked reduction in the water-affinity of soot particles passed through conductive silicone tubing. These combined observations suggest that the silicone tubing artifacts may have wide consequence for the aerosol community and should, therefore, be used with caution. Gentle heating, physical and chemical properties of the particle carriers, exposure to solvents, and tubing age may influence siloxane uptake. The amount of contamination is expected to increase as the tubing surface area increases and as the particle surface area increases. The effect is observed at ambient temperature and enhanced by mild heating (<100 oC). Further evaluation is warranted.

Timko, Michael T.; Yu, Zhenhong; Kroll, Jesse; Jayne, John T.; Worsnop, Douglas R.; Miake-Lye, Richard C.; Onasch, Timothy B.; Liscinsky, David; Kirchstetter, Thomas W.; Destaillats, Hugo; Holder, Amara L.; Smith, Jared D.; Wilson, Kevin R.

2009-05-15T23:59:59.000Z

183

CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS  

E-Print Network [OSTI]

CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS Yongling Ren, Natalita M Nursam, Da Wang and Klaus J Weber Centre for Sustainable Energy Systems, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200, Australia ABSTRACT

184

Combustion Synthesis of Silicon Carbide 389 Combustion Synthesis of Silicon Carbide  

E-Print Network [OSTI]

by which combustion synthesis can occur: self - propagating high-temperature synthesis (SHS) and volume of the SHS mode (Fig.1a) is that locally initiated, the self-sustained reaction rapidly propagatesCombustion Synthesis of Silicon Carbide 389 X Combustion Synthesis of Silicon Carbide Alexander S

Mukasyan, Alexander

185

Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics  

DOE Patents [OSTI]

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Stoddard, Nathan G. (Gettysburg, PA)

2011-11-01T23:59:59.000Z

186

LPCVD SILICON NITRIDE-ON-SILICON SPACER TECHNOLOGY H. W. van Zeijl, L.K. Nanver  

E-Print Network [OSTI]

of obtaining self-aligned sub- lithographic dimensions. In many processes were spacers are applied to separate-etching affects the dimensions of the spacer which could lead to a lack of control over the spacer-related deviceLPCVD SILICON NITRIDE-ON-SILICON SPACER TECHNOLOGY H. W. van Zeijl, L.K. Nanver DIMES Delft

Technische Universiteit Delft

187

Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics  

DOE Patents [OSTI]

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Stoddard, Nathan G

2014-01-14T23:59:59.000Z

188

Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

Mailoa, Jonathan P

2012-01-01T23:59:59.000Z

189

Cryogenic silicon surface ion trap  

E-Print Network [OSTI]

Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\\dot{\\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $\\mu$m. These results open many new avenues to arrays of micro-fabricated ion traps.

Michael Niedermayr; Kirill Lakhmanskiy; Muir Kumph; Stefan Partel; Johannes Edlinger; Michael Brownnutt; Rainer Blatt

2014-03-20T23:59:59.000Z

190

Dynamics of hydrogen in silicon  

SciTech Connect (OSTI)

The frequency of local hydrogen vibration in silicon and its decay process have been studied theoretically. It is believed that the H in Si is located at the bond center in equilibrium. By analyzing the discrepancy between the frequency of the antisymmetric stretching mode in a frozen-phonon calculation and the frequency in a molecular dynamic simulation, it is found that the Si–H–Si bond is dynamically bending. The reason is that the adiabatic potential along a direction perpendicular to the bond axis is so flat that random thermal motion of atoms easily scatters the H atom from the axis. A fast relaxation (?1 ps) around the axis hides this bending from observation by slow-response measurements. One consequence of the bending is that it renders the frequency of the symmetric stretching mode higher than when the bond is not bent. Another, more interesting consequence of this bending is the fast decay rate of the antisymmetric stretching mode, in spite of its local-mode character. Again, the ease of conversion of the H motion from parallel to perpendicular to the bond axis is the cause of this fast decay, which is otherwise difficult to explain by a simple combination law of frequencies.

Shirai, Koun [ISIR, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Hamada, Ikutaro [International Center for Materials Nanoarchitectonics, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Katayama-Yoshida, Hiroshi [Grad. School of Eng. Sci., Osaka University, 1-3, Machikaneyama, Toyonaka 560-8531 (Japan)

2014-02-21T23:59:59.000Z

191

Silicon ball grid array chip carrier  

DOE Patents [OSTI]

A ball-grid-array integrated circuit (IC) chip carrier formed from a silicon substrate is disclosed. The silicon ball-grid-array chip carrier is of particular use with ICs having peripheral bond pads which can be reconfigured to a ball-grid-array. The use of a semiconductor substrate such as silicon for forming the ball-grid-array chip carrier allows the chip carrier to be fabricated on an IC process line with, at least in part, standard IC processes. Additionally, the silicon chip carrier can include components such as transistors, resistors, capacitors, inductors and sensors to form a "smart" chip carrier which can provide added functionality and testability to one or more ICs mounted on the chip carrier. Types of functionality that can be provided on the "smart" chip carrier include boundary-scan cells, built-in test structures, signal conditioning circuitry, power conditioning circuitry, and a reconfiguration capability. The "smart" chip carrier can also be used to form specialized or application-specific ICs (ASICs) from conventional ICs. Types of sensors that can be included on the silicon ball-grid-array chip carrier include temperature sensors, pressure sensors, stress sensors, inertia or acceleration sensors, and/or chemical sensors. These sensors can be fabricated by IC processes and can include microelectromechanical (MEM) devices.

Palmer, David W. (Albuquerque, NM); Gassman, Richard A. (Greensboro, NC); Chu, Dahwey (Albuquerque, NM)

2000-01-01T23:59:59.000Z

192

California: TetraCell Silicon Solar Cell Improves Efficiency...  

Energy Savers [EERE]

California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award August 16, 2013 -...

193

Flaw-limited transport in germanium-on-silicon photodiodes  

E-Print Network [OSTI]

Epitaxial germanium growth on silicon substrates has enabled a new class of photodiodes that can be integrated with traditional silicon electronics. Previous workers using lowthroughput growth techniques have demonstrated ...

Orcutt, Jason S. (Jason Scott)

2008-01-01T23:59:59.000Z

194

Temperature Dependent Pspice Model of Silicon Carbide Power MOSFET  

E-Print Network [OSTI]

Temperature Dependent Pspice Model of Silicon Carbide Power MOSFET Yutian Cui1 Madhu Chinthavali2-- This paper provides a behavioral model in Pspice for a silicon carbide (SiC) power MOSFET rated at 1200 V

Tolbert, Leon M.

195

Iron-oxide catalyzed silicon photoanode for water splitting  

E-Print Network [OSTI]

This thesis presents an integrated study of high efficiency photoanodes for water splitting using silicon and iron-oxide. The fundamental limitations of silicon to water splitting applications were overcome by an ultrathin ...

Jun, Kimin

2011-01-01T23:59:59.000Z

196

Parylene Coated Silicon Probes for Neural Prosthesis Ray Huang1*  

E-Print Network [OSTI]

breakage. However, manufacturing limitations have prevented a strong and biocompatible silicon electrode as well as the in vitro electrical characterization of the gold and platinum micro electrodes. Keywords - parylene cable; neural prosthesis; silicon probe I. INTRODUCTION An important

Andersen, Richard

197

D0 layer 0 innermost layer of silicon microstrip tracker  

SciTech Connect (OSTI)

A new inner layer silicon strip detector has been built and will be installed in the existing silicon microstrip tracker in D0. They report on the motivation, design, and performance of this new detector.

Hanagaki, K.; /Fermilab

2006-01-01T23:59:59.000Z

198

aspect ratio silicon: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

silicon-nitride hard-mask for high aspect-ratio silicon fins V. Jovanovi, S, Zagreb, Croatia Abstract - A method for using hard-masks to achieve sub- 100 nm patterning of...

199

Sputtered silicon oxynitride for microphotonics : a materials study  

E-Print Network [OSTI]

Silicon oxynitride (SiON) is an ideal waveguide material because the SiON materials system provides substantial flexibility in composition and refractive index. SiON can be varied in index from that of silicon dioxide ...

Sandland, Jessica Gene, 1977-

2005-01-01T23:59:59.000Z

200

Fabrication of Memristors with Poly-Crystalline Silicon Nanowires  

E-Print Network [OSTI]

- silicon nanowire, SiNWFET, spacer technique, polycrystalline silicon, poly-Si, ambipolar, memristor of device dimensions, new phenomena have been claimed to be responsible for the memristor behavior

De Micheli, Giovanni

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

assisted grown silicon: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

202

acid modified silicone: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

203

athermal silicon microring: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

204

Deposition method for producing silicon carbide high-temperature semiconductors  

DOE Patents [OSTI]

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

1987-01-01T23:59:59.000Z

205

UNIVERSITY of CALIFORNIA A SPICE STUDY OF SILICON SENSOR  

E-Print Network [OSTI]

.1 Motivation 1.2 Background 1.2.1 Silicon Sensor Strips 1.2.2 An Explanation of the Long-Ladder Detector 1, and the results of that study are the primary focus of this paper. 1.2 Background 1.2.1 Silicon Sensors SiliconTaylor 1 UNIVERSITY of CALIFORNIA SANTA CRUZ A SPICE STUDY OF SILICON SENSOR STRIP NOISE ON LONG

Belanger, David P.

206

Silicon Valley Power- Residential Energy Efficiency Rebate Program  

Broader source: Energy.gov [DOE]

Silicon Valley Power offers rebates to residential customers for the purchase of a variety of energy efficient products including:

207

Highly Efficient Silicon Light Emitting Diode  

E-Print Network [OSTI]

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

208

Light Ions Response of Silicon Carbide Detectors  

E-Print Network [OSTI]

Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18 MeV were used. The diode active-region depletion-thickness, the linearity of the response, energy resolution and signal rise-time were measured for different values of the applied reverse bias. Moreover the radiation damage on SiC diodes irradiated with 53 MeV 16O beam has been explored. The data show that SiC material is radiation harder than silicon but at least one order of magnitude less hard than epitaxial silicon diodes. An inversion in the signal was found at a fluence of 10^15 ions/cm^2.

M. De Napoli; G. Raciti; E. Rapisarda; C. Sfienti

2006-12-14T23:59:59.000Z

209

Joining of porous silicon carbide bodies  

DOE Patents [OSTI]

A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

Bates, Carl H. (Worcester, MA); Couhig, John T. (Worcester, MA); Pelletier, Paul J. (Thompson, CT)

1990-05-01T23:59:59.000Z

210

Evaluation of silicon-nitride ceramic valves.  

SciTech Connect (OSTI)

Silicon-nitride ceramic valves can improve the performance of both light- and heavy-duty automotive engines because of the superior material properties of silicon nitrides over current metal alloys. However, ceramics are brittle materials that may introduce uncertainties in the reliability and durability of ceramic valves. As a result, the lifetime of ceramic valves are difficult to predict theoretically due to wide variations in the type and distribution of microstructural flaws in the material. Nondestructive evaluation (NDE) methods are therefore required to assess the quality and reliability of these valves. Because ceramic materials are optically translucent and the strength-limiting flaws are normally located near the valve surface, a laser-scatter method can be used for NDE evaluation of ceramic valves. This paper reviews the progress in the development of this NDE method and its application to inspect silicon-nitride ceramic valves at various stages of manufacturing and bench and engine tests.

Sun, J. G.; Zhang, J. M.; Andrews, M. J.; Tretheway, J. S.; Phillips, N. S .L.; Jensen, J. A.; Nuclear Engineering Division; Univ. of Texas; Caterpillar, Inc.

2008-01-01T23:59:59.000Z

211

Efficiency of silicon solar cells containing chromium  

DOE Patents [OSTI]

Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

1982-01-01T23:59:59.000Z

212

Silicon nitride ceramic having high fatigue life and high toughness  

DOE Patents [OSTI]

A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

Yeckley, Russell L. (Oakham, MA)

1996-01-01T23:59:59.000Z

213

Measurement of MTF Target Plasma Temperature Using Filtered Silicon Photodiodes  

E-Print Network [OSTI]

Measurement of MTF Target Plasma Temperature Using Filtered Silicon Photodiodes Presented at the 40 Plasma Temperature Using Filtered Silicon Photodiodes Magnetized Target Fusion (MTF) is an approach photodiodes, and a plasma-density interferometer. The data obtained from the array of seven filtered silicon

214

Laser Ablation Synthesis and Optical Characterization of Silicon Carbide Nanowires  

E-Print Network [OSTI]

Laser Ablation Synthesis and Optical Characterization of Silicon Carbide Nanowires Wensheng Shi Kong, SAR, China Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation and composite nanostructures,4 have been fabricated by this technique. Silicon carbide (SiC) is a wide

Zheng, Yufeng

215

Liquid phase sintering of silicon carbide  

DOE Patents [OSTI]

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

Cutler, Raymond A. (Bountiful, UT); Virkar, Anil V. (Salt Lake City, UT); Hurford, Andrew C. (Salt Lake City, UT)

1989-01-01T23:59:59.000Z

216

Silicon metal-semiconductor-metal photodetector  

DOE Patents [OSTI]

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

217

Silicon metal-semiconductor-metal photodetector  

DOE Patents [OSTI]

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1995-01-01T23:59:59.000Z

218

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer  

DOE Patents [OSTI]

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

Carlson, David E. (Yardley, PA)

1982-01-01T23:59:59.000Z

219

Solar cell structure incorporating a novel single crystal silicon material  

DOE Patents [OSTI]

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1983-01-01T23:59:59.000Z

220

Metal electrode for amorphous silicon solar cells  

DOE Patents [OSTI]

An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

Williams, Richard (Princeton, NJ)

1983-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Microscopic Investigations on various Silicon Materials  

E-Print Network [OSTI]

to be responsible for the radiation hardness of oxygen enriched silicon. The generation of the acceptor V 2 O interstitials and vacancies form defects with the impurities oxygen and carbon. The radiation induced defects are the shallow doping concentration phosphorous and the concentrations of the impurities oxygen and carbon

222

Electrical characterization of germanium-silicon alloy  

E-Print Network [OSTI]

Samples of strained germanium-silicon (Ge-Si) alloy were electrically characterized using resistivity and Hall-mobility measurements. The samples were obtained from a n-type Ge-Si strained epi-layer which was grown on a ptype substrate using MBE...

Kishore, Kumar P.

1994-01-01T23:59:59.000Z

223

Silicon on insulator achieved using electrochemical etching  

DOE Patents [OSTI]

Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50.degree. C. or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense.

McCarthy, Anthony M. (Menlo Park, CA)

1997-01-01T23:59:59.000Z

224

High Q silicon carbide microdisk resonator  

SciTech Connect (OSTI)

We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12?×?10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Lee, Jonathan Y. [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Feng, Philip X.-L. [Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)

2014-05-05T23:59:59.000Z

225

PWR cores with silicon carbide cladding  

SciTech Connect (OSTI)

The feasibility of using silicon carbide rather than Zircaloy cladding, to reach higher power levels and higher discharge burnups in PWRs has been evaluated. A preliminary fuel design using fuel rods with the same dimensions as in the Westinghouse Robust Fuel Assembly but with fuel pellets having 10 vol% central void has been adopted to mitigate the higher fuel temperatures that occur due to the lower thermal conductivity of the silicon carbide and to the persistence of the open clad-pellet gap over most of the fuel life. With this modified fuel design, it is possible to achieve 18 month cycles that meet present-day operating constraints on peaking factor, boron concentration, reactivity coefficients and shutdown margin, while allowing batch average discharge burnups up to 80 MWD/kgU and peak rod burnups up to 100 MWD/kgU. Power uprates of 10% and possibly 20% also appear feasible. For non-uprated cores, the silicon carbide-clad fuel has a clear advantage that increases with increasing discharge burnup. Even for comparable discharge burnups, there is a savings in enriched uranium. Control rod configuration modifications may be required to meet the shutdown margin criterion for the 20% up-rate. Silicon carbide's ability to sustain higher burnups than Zircaloy also allows the design of a licensable two year cycle with only 96 fresh assemblies, avoiding the enriched uranium penalty incurred with use of larger batch sizes due to their excessive leakage. (authors)

Dobisesky, J. P.; Carpenter, D.; Pilat, E.; Kazimi, M. S. [Center for Advanced Nuclear Energy Systems, Dept. of Nuclear Science and Engineering, Massachusetts Inst. of Technology, 77 Massachusetts Avenue 24-215, Cambridge, MA 02139-4307 (United States)

2012-07-01T23:59:59.000Z

226

Silicon nitride having a high tensile strength  

DOE Patents [OSTI]

A silicon nitride ceramic comprising: a) inclusions no greater than 25 microns in length, b) agglomerates no greater than 20 microns in diameter, and c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa.

Pujari, Vimal K. (Northboro, MA); Tracey, Dennis M. (Medfield, MA); Foley, Michael R. (Oxford, MA); Paille, Norman I. (Oxford, MA); Pelletier, Paul J. (Millbury, MA); Sales, Lenny C. (Grafton, MA); Willkens, Craig A. (Sterling, MA); Yeckley, Russell L. (Oakham, MA)

1996-01-01T23:59:59.000Z

227

Nanoparticle-based etching of silicon surfaces  

DOE Patents [OSTI]

A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

Branz, Howard (Boulder, CO); Duda, Anna (Denver, CO); Ginley, David S. (Evergreen, CO); Yost, Vernon (Littleton, CO); Meier, Daniel (Atlanta, GA); Ward, James S. (Golden, CO)

2011-12-13T23:59:59.000Z

228

Methanol Steam Reformer on a Silicon Wafer  

SciTech Connect (OSTI)

A study of the reforming rates, heat transfer and flow through a methanol reforming catalytic microreactor fabricated on a silicon wafer are presented. Comparison of computed and measured conversion efficiencies are shown to be favorable. Concepts for insulating the reactor while maintaining small overall size and starting operation from ambient temperature are analyzed.

Park, H; Malen, J; Piggott, T; Morse, J; Sopchak, D; Greif, R; Grigoropoulos, C; Havstad, M; Upadhye, R

2004-04-15T23:59:59.000Z

229

Silicon on insulator achieved using electrochemical etching  

DOE Patents [OSTI]

Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

McCarthy, A.M.

1997-10-07T23:59:59.000Z

230

Application Of Optical Processing For Growth Of Silicon Dioxide  

DOE Patents [OSTI]

A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

Sopori, Bhushan L. (Denver, CO)

1997-06-17T23:59:59.000Z

231

Method of forming crystalline silicon devices on glass  

DOE Patents [OSTI]

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

McCarthy, A.M.

1995-03-21T23:59:59.000Z

232

Method of forming crystalline silicon devices on glass  

DOE Patents [OSTI]

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

233

Fabrication of 3D Silicon Sensors  

SciTech Connect (OSTI)

Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

2012-06-06T23:59:59.000Z

234

Synthesis of silicon and germanium nanowires.  

SciTech Connect (OSTI)

The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

Clement, Teresa J. (Arizona State University); Hsu, Julia W. P.

2007-11-01T23:59:59.000Z

235

Direct current, closed furnace silicon technology  

SciTech Connect (OSTI)

The dc closed furnace technology for smelting silicon offers technical operating challenges, as well as, economic opportunities for off-gas recovery, reduced electrode consumption, reduced reductant oxidation losses, reduced energy consumption, and improved silicon recovery. The 10 mva dc closed furnace is located in East Selkirk, Manitoba. Construction of this pilot plant was started in September 1990. Following successful commissioning of the furnace in 1992, a number of smelting tests have been conducted aimed at optimization of the furnace operation and the raw material mix. The operation of a closed furnace is significantly different from an open furnace operation. The major difference being in the mechanical movement of the mix, off-gas recovery, and inability to observe the process. These differences made data collection and analysis critical in making operating decisions. This closed furnace was operated by computer control (state of the art in the smelling industry).

Dosaj, V.D. [Dow Corning Corp., Midland, MI (United States); May, J.B. [Dow Corning Corp., Freeland, MI (United States); Arvidson, A.N. [Meadow Materials, Manitoba (Canada)

1994-05-01T23:59:59.000Z

236

Superconductive silicon nanowires using gallium beam lithography.  

SciTech Connect (OSTI)

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01T23:59:59.000Z

237

Development efforts on silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from the silicon high-concentration solar cell program at Stanford University from the period 1983--1990. Following a detailed design study, efforts were focused upon experimental verification of the modeled results that predicted 28% efficiencies for a new 500X concentrator solar cell design. A history of the research progress is given detailing the critical experiments that enabled the demonstration of 19.6% cells in 1983, then subsequent improvements culminating in efficiencies over 28% by 1987. In addition to laboratory efficiency improvements, the report details advances in the understanding of the fundamental device physics and modeling of silicon solar cell operation. The latter stages of the program included the development of module-ready cells in large quantity for the EPRI prototype 500X concentrator modules. Several of these 48-cell modules are currently in the field under test.

Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (United States))

1992-02-01T23:59:59.000Z

238

Capacitance measurements on silicon microstrip detectors  

SciTech Connect (OSTI)

Load capacitance is the most significant parameter determining the noise level of charge-sensitive readout electronics. This is the capacitance between the detecting electrode and all other conductors in the system. For the case of silicon microstrip detectors, the significant contributions are those from the other strips on the detector surface and also from the backplane. This article presents the results of capacitance measurements on both the junction and ohmic sides of detectors, and with various geometries. Double-sided detectors with a second metal layer and different readout patterns were also studied. In addition, the authors present measurements of microstrip capacitance after irradiation with both neutrons and photons made as part of the research by the RD20 collaboration into all aspects of the use of silicon microstrips at the Large Hadron Collider at CERN.

Masciocchi, S. (INFN, Milano (Italy) CERN, Geneva (Switzerland)); Peisert, A. (INFN, Padova (Italy)); Roenqvist, C. (SEFT, Helsinki (Finland)); Vite, D.; Wheadon, R. (Imperial Coll., London (United Kingdom))

1993-08-01T23:59:59.000Z

239

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Ciszek, T.F.

1995-03-28T23:59:59.000Z

240

Status of the CDF silicon detector  

SciTech Connect (OSTI)

The CDF Run II silicon micro-strip detector is an essential part of the heavy flavor tagging and forward tracking capabilities of the experiment. Since the commissioning period ended in 2002, about 85% of the 730 k readout channels have been consistently provided good data. A summary of the recent improvements in the DAQ system as well as experience of maintaining and operating such a large, complex detector are presented.

Grinstein, Sebastian; /Harvard U.

2006-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

242

The PHENIX Forward Silicon Vertex Detector  

E-Print Network [OSTI]

A new silicon detector has been developed to provide the PHENIX experiment with precise charged particle tracking at forward and backward rapidity. The Forward Silicon Vertex Tracker (FVTX) was installed in PHENIX prior to the 2012 run period of the Relativistic Heavy Ion Collider (RHIC). The FVTX is composed of two annular endcaps, each with four stations of silicon mini-strip sensors, covering a rapidity range of $1.2<|\\eta|<2.2$ that closely matches the two existing PHENIX muon arms. Each station consists of 48 individual silicon sensors, each of which contains two columns of mini-strips with 75 $\\mu$m pitch in the radial direction and lengths in the $\\phi$ direction varying from 3.4 mm at the inner radius to 11.5 mm at the outer radius. The FVTX has approximately 0.54 million strips in each endcap. These are read out with FPHX chips, developed in collaboration with Fermilab, which are wire bonded directly to the mini-strips. The maximum strip occupancy reached in central Au-Au collisions is approximately 2.8%. The precision tracking provided by this device makes the identification of muons from secondary vertices away from the primary event vertex possible. The expected distance of closest approach (DCA) resolution of 200 $\\mu$m or better for particles with a transverse momentum of 5 GeV/$c$ will allow identification of muons from relatively long-lived particles, such as $D$ and $B$ mesons, through their broader DCA distributions.

C. Aidala; L. Anaya; E. Anderssen; A. Bambaugh; A. Barron; J. G. Boissevain; J. Bok; S. Boose; M. L. Brooks; S. Butsyk; M. Cepeda; P. Chacon; S. Chacon; L. Chavez; T. Cote; C. D'Agostino; A. Datta; K. DeBlasio; L. DelMonte; E. J. Desmond; J. M. Durham; D. Fields; M. Finger; C. Gingu; B. Gonzales; J. S. Haggerty; T. Hawke; H. W. van Hecke; M. Herron; J. Hoff; J. Huang; X. Jiang; T. Johnson; M. Jonas; J. S. Kapustinsky; A. Key; G. J. Kunde; J. Kurtz; J. LaBounty; D. M. Lee; K. B. Lee; M. J. Leitch; M. Lenz; W. Lenz; M. X. Liu; D. Lynch; E. Mannel; P. L. McGaughey; A. Meles; B. Meredith; H. Nguyen; E. O'Brien; R. Pak; V. Papavassiliou; S. Pate; H. Pereira; G. D. N. Perera; M. Phillips; R. Pisani; S. Polizzo; R. J. Poncione; J. Popule; M. Prokop; M. L. Purschke; A. K. Purwar; N. Ronzhina; C. L. Silva; M. Slunecka; R. Smith; W. E. Sondheim; K. Spendier; M. Stoffer; E. Tennant; D. Thomas; M. Tomasek; A. Veicht; V. Vrba; X. R. Wang; F. Wei; D. Winter; R. Yarema; Z. You; I. Younus; A. Zimmerman; T. Zimmerman

2014-02-14T23:59:59.000Z

243

Longwei Silicon Co Ltd | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey,(Monaster AndLittletown,Longwei Silicon Co Ltd Jump to: navigation,

244

Porous siliconformation and etching process for use in silicon micromachining  

DOE Patents [OSTI]

A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

Guilinger, Terry R. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Martin, Jr., Samuel B. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

245

Method for forming silicon on a glass substrate  

DOE Patents [OSTI]

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

246

Copper-assisted, anti-reflection etching of silicon surfaces  

DOE Patents [OSTI]

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

Toor, Fatima; Branz, Howard

2014-08-26T23:59:59.000Z

247

Diamond-Silicon Carbide Composite And Method For Preparation Thereof  

DOE Patents [OSTI]

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Qian, Jiang (Los Alamos, NM); Zhao, Yusheng (Los Alamos, NM)

2005-09-06T23:59:59.000Z

248

Molybdenum enhanced low-temperature deposition of crystalline silicon nitride  

DOE Patents [OSTI]

A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.

Lowden, R.A.

1994-04-05T23:59:59.000Z

249

Retrograde Melting and Internal Liquid Gettering in Silicon  

SciTech Connect (OSTI)

Retrograde melting (melting upon cooling) is observed in silicon doped with 3d transition metals, via synchrotron-based temperature-dependent X-ray microprobe measurements. Liquid metal-silicon droplets formed via retrograde melting act as efficient sinks for metal impurities dissolved within the silicon matrix. Cooling results in decomposition of the homogeneous liquid phase into solid multiple-metal alloy precipitates. These phenomena represent a novel pathway for engineering impurities in semiconductor-based systems.

Hudelson, Steve; Newman, Bonna K.; Bernardis, Sarah; Fenning, David P.; Bertoni, Mariana I.; Marcus, Matthew A.; Fakra, Sirine C.; Lai, Barry; Buonassisi, Tonio

2011-07-01T23:59:59.000Z

250

Etch-free Formation of Porous Silicon by High-energy Ion Irradiation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Etch-free Formation of Porous Silicon by High-energy Ion Irradiation. Etch-free Formation of Porous Silicon by High-energy Ion Irradiation. Abstract: In this study, porous silicon...

251

PHYSICAL REVIEW B 90, 115209 (2014) Computational search for direct band gap silicon crystals  

E-Print Network [OSTI]

abundance, silicon is the preferred solar-cell material despite the fact that current silicon materials have semiconductor. For this reason, the most widely used solar-cell materials are all silicon based [1]. Current

Lee, Jooyoung

252

Method and apparatus for producing high purity silicon  

DOE Patents [OSTI]

A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

Olson, J.M.

1983-05-27T23:59:59.000Z

253

Retrograde Melting and Internal Liquid Gettering in Silicon  

E-Print Network [OSTI]

X-ray ?uorescence microscopy ( ? -XRF) mapping was used toimpurities detected by ? -XRF was determined by X-raymetal-silicon mixture. ? -XRF mapping of the standard at

Hudelson, Steve

2012-01-01T23:59:59.000Z

254

Fact Sheet: Award-Winning Silicon Carbide Power Electronics ...  

Broader source: Energy.gov (indexed) [DOE]

Operating at high temperatures and with reduced energy losses, two silicon carbide power electronics (PE) projects were awarded the prestigious R&D 100 Award. This technology was...

255

Coating for Silicon Solar Cell by Using Silvaco Software  

E-Print Network [OSTI]

efficiency of SiO 2/Si3N 4silicon solar cell. The solar cell structure was modelled by using Silvaco software

A. Lennie; H. Abdullah; Z. M. Shila; M. A. Hannan

256

Silicon microneedles array with biodegradable tips for transdermal drug delivery  

E-Print Network [OSTI]

This paper presents the fabrication process, characterization results and basic functionality of silicon microneedles array with biodegradable tips. In order to avoid the main problems related to silicon microneedles : broking of the top part of the needles inside the skin, a simple solution can be fabrication of microneedles array with biodegradable tips. The silicon microneedles array was fabricated by using reactive ion etching while the biodegradable tips were performed using and anodization process that generates selectively porous silicon only on the top part of the skin. The paper presents also the results of in vitro release of calcein using microneedles array with biodegradable tips

Chen, B; Tay, Francis; Wong, Y T; Iliescu, C

2008-01-01T23:59:59.000Z

257

Optimizing wettability of externally wetted microfabricated silicon electrospray thrusters  

E-Print Network [OSTI]

Electrospray propulsion devices with externally wetted architectures have shown favorable performance. The design of microfabricated silicon thrusters and their feed systems requires an understanding of propellant flow ...

Garza, Tanya Cruz

2007-01-01T23:59:59.000Z

258

Lobbyist Disclosure Form - Silicon Valley | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Lobbyist Disclosure Form - Silicon Valley.pdf More Documents & Publications Lobbyist Disclosure Form - AltEn Lobbyist Disclosure Form - First Solar Interested Parties - Shipp...

259

Fabrication and testing of oxidized porous silicon field emitter strips  

E-Print Network [OSTI]

mechanism. Formation by Local Dissolution of Silicon Unagami proposed [29] that the formation of porous silicon occurs due to the dissolution of silicon at places restricted by a surface porous film and silicic acid formed during the dissolution reaction... anodized in the presence of HF electmlyte. The silicon wafer divides the electrochemical cell into front and rear half cells. Each of the cells was filled with the electrolyte which is a mixture of 1. 5:1 hydroflouric acid and ethanol. Ethanol is used...

Madduri, Vasanta Bhanu

1992-01-01T23:59:59.000Z

260

And the Award Goes to... Silicon Ink Solar Technology Supported...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

GCL Solar Energy Technology Holdings formerly GCL Silicon aka...  

Open Energy Info (EERE)

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

262

And the Award Goes to... Silicon Ink Solar Technology Supported...  

Energy Savers [EERE]

program continues to see from investing in collaborative efforts with solar start-ups that take full advantage of the NREL's expertise and facilities. Innovalight's silicon...

263

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54??m  

SciTech Connect (OSTI)

Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54??m have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

Ramírez, J. M., E-mail: jmramirez@el.ub.edu; Berencén, Y.; Garrido, B. [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Cueff, S. [Institut des Nanotechnologies de Lyon, École Centrale de Lyon, Écully 69134 (France); Labbé, C. [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

2014-08-28T23:59:59.000Z

264

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network [OSTI]

microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

265

Nanocrystalline Silicon Quantum Dot Light Emitting Diodes Using Metal Oxide Charge Transport Layers.  

E-Print Network [OSTI]

??Silicon-based lighting show promise for display and solid state lighting use. Here we demonstrate a novel thin film light emitting diode device using nanocrystalline silicon… (more)

Zhu, Jiayuan

2013-01-01T23:59:59.000Z

266

E-Print Network 3.0 - active edge silicon Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

its... platform allows silicon photonic devices to be integrated with active optoelectronic devices more commonly... through which current can flow. A typical hybrid silicon ......

267

E-Print Network 3.0 - alice silicon strip Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

results for: alice silicon strip Page: << < 1 2 3 4 5 > >> 1 Department of Physics & Astronomy Experimental Particle Physics Group Summary: functions of the ALICE silicon system...

268

Response of Nanocrystalline 3C Silicon Carbide to Heavy-Ion Irradiatio...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nanocrystalline 3C Silicon Carbide to Heavy-Ion Irradiation. Response of Nanocrystalline 3C Silicon Carbide to Heavy-Ion Irradiation. Abstract: Nanostructured materials are...

269

E-Print Network 3.0 - atlas silicon strip Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

strip Search Powered by Explorit Topic List Advanced Search Sample search results for: atlas silicon strip Page: << < 1 2 3 4 5 > >> 1 ATLAS Tracker Upgrade: Silicon Strip...

270

E-Print Network 3.0 - area multicrystalline silicon Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SILICON SOLAR CELLS K. Bothe1,a) , D... ABSTRACT: We report on studies of the emission of light from industrial multicrystalline silicon solar... a broad wavelength distribution...

271

E-Print Network 3.0 - amorphous-silicon-based solar cell Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer Summary: light exposure as do the amorphous silicon-based...

272

Silicon-on-glass pore network micromodels with oxygen-sensing...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Silicon-on-glass pore network micromodels with oxygen-sensing fluorophore films for chemical imaging and defined spatial Silicon-on-glass pore network micromodels with...

273

amorphous-nanocrystalline silicon thin: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

274

NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

Not Available

2014-08-01T23:59:59.000Z

275

Tribological degradation of fluorocarbon coated silicon microdevice surfaces in normal and sliding contact  

E-Print Network [OSTI]

Tribological degradation of fluorocarbon coated silicon microdevice surfaces in normal and sliding degradation of the contact interface of a fluorocarbon monolayer-coated polycrystalline silicon microdevice

Krim, Jacqueline

276

Mechanical properties and microstructures of dual phase steels containing silicon, aluminum and molybdenum  

E-Print Network [OSTI]

AND MICROSTRUCTURES OF DUAL PHASE STEELS CONTAINING SILICON,and Microstructures of Dual Phase Steels Containing Silicon,microstructures of selected dual-phase steels in which the

Neill, Thomas John O'

2011-01-01T23:59:59.000Z

277

Light-induced degradation at the silicon/silicon dioxide interface  

SciTech Connect (OSTI)

Single-crystal silicon point-contact solar cells show a degradation in their efficiency after being exposed to concentrated sunlight. This change has been linked to an increase in the surface recombination velocity. A similar effect is produced by carrier injection under forward bias. The annealing kinetics, the role of ultraviolet light, and possible causes for the creation of surface states are discussed.

Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

1988-04-25T23:59:59.000Z

278

Molybdenum disilicide composites reinforced with zirconia and silicon carbide  

DOE Patents [OSTI]

Compositions are disclosed consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

Petrovic, J.J.

1995-01-17T23:59:59.000Z

279

Superlattice doped layers for amorphous silicon photovoltaic cells  

DOE Patents [OSTI]

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Arya, Rajeewa R. (Doylestown, PA)

1988-01-12T23:59:59.000Z

280

Low cost routes to high purity silicon and derivatives thereof  

DOE Patents [OSTI]

The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon).

Laine, Richard M; Krug, David James; Marchal, Julien Claudius; Mccolm, Andrew Stewart

2013-07-02T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS  

E-Print Network [OSTI]

CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS by David T. Oliphant. Woolley Dean, College of Physical and Mathematical Sciences #12;ABSTRACT CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS David T. Oliphant Department of Physics and Astronomy

Hart, Gus

282

Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga  

E-Print Network [OSTI]

-Si have long been of fundamental interest, and amorphous silicon a-Si:H /c-Si heterojunctions are now is about the current limit achieved with a-Si:H/c-Si heterojunctions. The largest VOC we ob- tained was 0Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga and E. A. Schiff

Schiff, Eric A.

283

Molybdenum disilicide composites reinforced with zirconia and silicon carbide  

DOE Patents [OSTI]

Compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

Petrovic, John J. (Los Alamos, NM)

1995-01-01T23:59:59.000Z

284

PECVD Silicon Carbide Waveguides for Multichannel G. Pandraud  

E-Print Network [OSTI]

PECVD Silicon Carbide Waveguides for Multichannel Sensors G. Pandraud Kavli Institute of Nano Deposition (PECVD) Silicon Carbide (SiC) waveguides. Thin SiC films have been deposited onto Si substrates with a SiO2 film acting as a cladding layer around the carbide core. In the sensor, the evanescent tale

Technische Universiteit Delft

285

Method for improving the stability of amorphous silicon  

DOE Patents [OSTI]

A method of producing a metastable degradation resistant amorphous hydrogenated silicon film is provided, which comprises the steps of growing a hydrogenated amorphous silicon film, the film having an exposed surface, illuminating the surface using an essentially blue or ultraviolet light to form high densities of a light induced defect near the surface, and etching the surface to remove the defect.

Branz, Howard M.

2004-03-30T23:59:59.000Z

286

Investigating the efficiency of Silicon Solar cells at  

E-Print Network [OSTI]

Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

Attari, Shahzeen Z.

287

Cecilia Gerber, Fermilab The D0 Silicon Microstrip Tracker  

E-Print Network [OSTI]

1 Cecilia Gerber, Fermilab The D0 Silicon Microstrip Tracker Cecilia Gerber - Fermilab Outline · Conclusions and Outlook #12;2 Cecilia Gerber, Fermilab · Run II will start March 1st 2001 · Center forward preshower #12;3 Cecilia Gerber, Fermilab D0 Silicon Microstrip Tracker Barrel H-disk F

Gerber, Cecilia E.

288

Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics  

E-Print Network [OSTI]

Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics A thesis presented Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics Eric Mazur Brian R. Tull Abstract irradiated surface layer to the grain boundaries. #12;iv Lastly, we measure the photovoltaic properties

Mazur, Eric

289

Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief  

E-Print Network [OSTI]

of the materials. Solar cells based on thin films of amorphous or polycrystalline silicon require sub- stantially, Urbana, Illinois 61801 ABSTRACT Recently developed classes of monocrystalline silicon solar microcells systems that benefit from thin construction and efficient materials utilization. KEYWORDS Nanoimprint

Rogers, John A.

290

IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES  

E-Print Network [OSTI]

IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES Nick E. Powell 1* , Byung the benefit of using optically superior silicone encapsulant materials over the incumbent ethylene vinyl in the UV region of the solar spectrum. Single cell mini-modules were prepared using two different

291

Terahertz emission from black silicon M. Theuer,2  

E-Print Network [OSTI]

of different meth- ods for the generation of terahertz radiation have been devel- oped including pure optical-called photoconductive terahertz emitters and detectors, radiation-damaged silicon on sapphire or low- temperature grown of terahertz optics made out of silicon is that the copropagating infrared radiation is ab- sorbed sufficiently

292

Epitaxial graphene on silicon carbide: Introduction to structured graphene  

E-Print Network [OSTI]

Epitaxial graphene on silicon carbide: Introduction to structured graphene Ming Ruan 1 , Yike Hu 1, France Abstract We present an introduction to the rapidly growing field of epitaxial graphene on silicon present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now

Paris-Sud XI, Université de

293

Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films  

E-Print Network [OSTI]

Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films K. Pangal,a) J. C August 1998; accepted for publication 21 October 1998 We report that a room temperature hydrogen plasma thermal crystallization of amorphous silicon time by a factor of five. Exposure to hydrogen plasma reduces

294

Arrays of ultrathin silicon solar microcells  

DOE Patents [OSTI]

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2014-03-25T23:59:59.000Z

295

IR permittivities for silicides and doped silicon  

SciTech Connect (OSTI)

The complex permittivity for Pt, Pd, Ni, and Ti-silicide films as well as heavily doped p- and n-type silicon were determined by ellipsometry over the energy range 0.031 eV to 4.0 eV. Fits to the Drude model gave bulk plasma and relaxation frequencies. Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy, secondary ion mass spectrometry, and four-point probe measurements complemented the optical characterization. Calculations from measured permittivities of waveguide loss and mode confinement suggest that the considered materials are better suited for long-wavelength surface-plasmon-polariton waveguide applications than metal films.

Cleary, J. W.; Peale, R. E.; Smith, C. W.; Ishigami, M. [Department of Physics, University of Central Florida, Orlando, Florida 32816 (United States); Shelton, D. J.; Boreman, G. D. [College of Optics (CREOL), University of Central Florida, Orlando, Florida 32816 (United States); Soref, R.; Drehman, A.; Buchwald, W. R. [Sensors Directorate, Air Force Research Laboratory, Hanscom Air Force Base, Massachusetts 01731 (United States)

2010-04-15T23:59:59.000Z

296

Hybrid stretchable circuits on silicone substrate  

SciTech Connect (OSTI)

When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

Robinson, A., E-mail: adam.1.robinson@nokia.com; Aziz, A., E-mail: a.aziz1@lancaster.ac.uk [Nanoscience Centre, University of Cambridge, Cambridge CB01FF (United Kingdom); Liu, Q.; Suo, Z. [School of Engineering and Applied Sciences and Kavli Institute for Bionano Science and Technology, Harvard University, Cambridge, Massachusetts 02138 (United States); Lacour, S. P., E-mail: stephanie.lacour@epfl.ch [Centre for Neuroprosthetics and Laboratory for Soft Bioelectronics Interfaces, School of Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015 (Switzerland)

2014-04-14T23:59:59.000Z

297

Fermilab silicon strip readout chip for BTev  

SciTech Connect (OSTI)

A chip has been developed for reading out the silicon strip detectors in the new BTeV colliding beam experiment at Fermilab. The chip has been designed in a 0.25 {micro}m CMOS technology for high radiation tolerance. Numerous programmable features have been added to the chip, such as setup for operation at different beam crossing intervals. A full size chip has been fabricated and successfully tested. The design philosophy, circuit features, and test results are presented in this paper.

Yarema, Raymond; Hoff, Jim; Mekkaoui, Abderrezak; Manghisoni, Massimo; Re, Valerio; Angeleri, Valentina; Manfredi, Pier Francesco; Ratti, Lodovico; Speziali, Valeria; /Fermilab /Bergamo U. /INFN, Pavia /Pavia U.

2005-05-01T23:59:59.000Z

298

Silicon point contact concentrator solar cells  

SciTech Connect (OSTI)

Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 micron thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/sq cm. Efficiency peaked at 23 percent at 11 W/sq cm measured at 22-25 C. Strategies for obtaining higher efficiencies with this solar cell design are discussed. 8 references.

Sinton, R.A.; Kwark, Y.; Swirhun, S.; Swanson, R.M.

1985-08-01T23:59:59.000Z

299

Origami-enabled deformable silicon solar cells  

SciTech Connect (OSTI)

Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

2014-02-24T23:59:59.000Z

300

Photovoltaic Silicon Cell Basics | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Careerlumens_placard-green.epsEnergy1.pdfMarket | DepartmentPhotoelectrochemical WorkingSilicon-used

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Becancour Silicon Inc BSI | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine:Barbers PointEnergy Information HotUtah: EnergyBecancour Silicon Inc

302

Peak Sun Silicon Corp | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth'sOklahoma/GeothermalOrange County isParadise, Nevada:PavilionSun Silicon Corp

303

6N Silicon Inc | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectric Coop,SaveWhiskey Flatshydro Homepowering9centuryGeneralN Silicon Inc

304

Silicon (100)/SiO2 by XPS  

SciTech Connect (OSTI)

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25T23:59:59.000Z

305

Micromachined cutting blade formed from {211}-oriented silicon  

DOE Patents [OSTI]

A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

Fleming, James G. (Albuquerque, NM); Fleming, legal representative, Carol (Burbank, CA); Sniegowski, Jeffry J. (Tijeras, NM); Montague, Stephen (Albuquerque, NM)

2011-08-09T23:59:59.000Z

306

Back contact to film silicon on metal for photovoltaic cells  

DOE Patents [OSTI]

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18T23:59:59.000Z

307

High resolution amorphous silicon radiation detectors  

DOE Patents [OSTI]

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

1992-05-26T23:59:59.000Z

308

High resolution amorphous silicon radiation detectors  

DOE Patents [OSTI]

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

Street, Robert A. (Palo Alto, CA); Kaplan, Selig N. (El Cerrito, CA); Perez-Mendez, Victor (Berkeley, CA)

1992-01-01T23:59:59.000Z

309

Spin interference of holes in silicon nanosandwiches  

SciTech Connect (OSTI)

Spin-dependent transport of holes is studied in silicon nanosandwiches on an n-Si (100) surface which are represented by ultranarrow p-Si quantum wells confined by {delta}-barriers heavily doped with boron. The measurement data of the longitudinal and Hall voltages as functions of the top gate voltage without an external magnetic field show the presence of edge conduction channels in the silicon nanosandwiches. An increase in the stabilized source-drain current within the range 0.25-5 nA subsequently exhibits the longitudinal conductance value 4e{sup 2}/h, caused by the contribution of the multiple Andreev reflection, the value 0.7(2e{sup 2}/h) corresponding to the known quantum conductance staircase feature, and displays Aharonov-Casher oscillations, which are indicative of the spin polarization of holes in the edge channels. In addition, at a low stabilized source-drain current, due to spin polarization, a nonzero Hall voltage is detected which is dependent on the top gate voltage; i. e., the quantum spin Hall effect is observed. The measured longitudinal I-V characteristics demonstrate Fiske steps and a negative differential resistance caused by the generation of electromagnetic radiation as a result of the Josephson effect. The results obtained are explained within a model of topological edge states which are a system of superconducting channels containing quantum point contacts transformable to single Josephson junctions at an increasing stabilized source-drain current.

Bagraev, N. T., E-mail: Bagraev@mail.ioffe.ru; Danilovskii, E. Yu.; Klyachkin, L. E.; Malyarenko, A. M. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mashkov, V. A. [St. Petersburg State Polytechnical University (Russian Federation)

2012-01-15T23:59:59.000Z

310

Thin Silicon MEMS Contact-Stress Sensor  

SciTech Connect (OSTI)

This work offers the first, thin, MEMS contact-stress (CS) sensor capable of accurate in situ measruement of time-varying, contact-stress between two solid interfaces (e.g. in vivo cartilage contact-stress and body armor dynamic loading). This CS sensor is a silicon-based device with a load sensitive diaphragm. The diaphragm is doped to create piezoresistors arranged in a full Wheatstone bridge. The sensor is similar in performance to established silicon pressure sensors, but it is reliably produced to a thickness of 65 {micro}m. Unlike commercial devices or other research efforts, this CS sensor, including packaging, is extremely thin (< 150 {micro}m fully packaged) so that it can be unobtrusively placed between contacting structures. It is built from elastic, well-characterized materials, providing accurate and high-speed (50+ kHz) measurements over a potential embedded lifetime of decades. This work explored sensor designs for an interface load range of 0-2 MPa; however, the CS sensor has a flexible design architecture to measure a wide variety of interface load ranges.

Kotovsky, J; Tooker, A; Horsley, D A

2009-12-07T23:59:59.000Z

311

Cryogenic Silicon Microstrip Detector Modules for LHC  

E-Print Network [OSTI]

CERN is presently constructing the LHC, which will produce collisions of 7 TeV protons in 4 interaction points at a design luminosity of 1034 cm-2 s-1. The radiation dose resulting from the operation at high luminosity will cause a serious deterioration of the silicon tracker performance. The state-of-art silicon microstrip detectors can tolerate a fluence of about 3 1014 cm-2 of hadrons or charged leptons. This is insufficient, however, for long-term operation in the central parts of the LHC trackers, in particular after the possible luminosity upgrade of the LHC. By operating the detectors at cryogenic temperatures the radiation hardness can be improved by a factor 10. This work proposes a cryogenic microstrip detector module concept which has the features required for the microstrip trackers of the upgraded LHC experiments at CERN. The module can hold an edgeless sensor, being a good candidate for improved luminosity and total cross-section measurements in the ATLAS, CMS and TOTEM experiments. The design o...

Perea-Solano, B

2004-01-01T23:59:59.000Z

312

Dispersion aspects of silicon carbide gelcasting  

SciTech Connect (OSTI)

The principal objective of this research was to increase the solid loading of silicon carbide (SiC) powder, in an appropriate liquid medium, to a level that is useful for gelcasting technology. A number of factors that determine the maximum concentration of silicon carbide that can be incorporated into a pourable ceramic suspension have been identified. The pH of the system is the most critical processing parameter. Its proper adjustment (pH 11 to 13) allows SiC concentrations exceeding 50%, based on volume, to be routinely achieved without the use of additional dispersing agents. The particle size of SiC was also found to affect the maximum, attainable concentration. The surface area of the powder and the presence of free carbon in the powder, though not significantly influencing the suspension properties, determine the concentration of initiator required to induce polymerization and gelation. SiC specimens have been gelcast for powders in the size range of 0.8 to 8.5 {mu}m; the powders employed contain either {approximately} 0 or 19% carbon by weight. Finally, the generation of bubbles, typically encountered by the use of ammonia to adjust pH has been circumvented by the use of tetramethylammonium hydroxide.

Bleier, A.

1991-09-01T23:59:59.000Z

313

Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD  

SciTech Connect (OSTI)

An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed increase in the optical bandgap of a-Si:H films close to the a-Si:H/cSi interface.

Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

2014-05-15T23:59:59.000Z

314

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma  

E-Print Network [OSTI]

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency Semiconductor, Eden Prairie, MN, USA Received 10 July 2002; accepted 14 July 2002 Abstract Silicon carbide films; Nanomaterials; Silicon carbide; Thermal plasmas; Thin films; Si tetrachlorine precursor Silicon carbide has

Zachariah, Michael R.

315

Heavy Element Abundances in Presolar Silicon Carbide Grains from Low-Metallicity AGB Stars  

E-Print Network [OSTI]

Heavy Element Abundances in Presolar Silicon Carbide Grains from Low-Metallicity AGB Stars Peter explosions. Silicon carbide is the best studied presolar mineral. Based on its isotopic compositions the identified presolar minerals are diamond, silicon carbide (SiC), graphite, silicon nitride (Si3N4), corundum

316

SIGNATURES OF THE s-PROCESS IN PRESOLAR SILICON CARBIDE GRAINS: BARIUM THROUGH HAFNIUM  

E-Print Network [OSTI]

SIGNATURES OF THE s-PROCESS IN PRESOLAR SILICON CARBIDE GRAINS: BARIUM THROUGH HAFNIUM Qing-Zhu Yin have been determined in a silicon carbide­rich sample of the Murchison carbonaceous chondrite, using carbide, silicon nitride, and various refractory oxides (e.g., Zinner 1998). Grains of silicon carbide (Si

Lee, Cin-Ty Aeolus

317

Rectification of evanescent heat transfer between dielectric-coated and uncoated silicon carbide plates  

E-Print Network [OSTI]

Rectification of evanescent heat transfer between dielectric-coated and uncoated silicon carbide://jap.aip.org/authors #12;Rectification of evanescent heat transfer between dielectric-coated and uncoated silicon carbide-infinite bodies of the dielectric-coated silicon carbide and uncoated silicon carbide. The permittivity

Fan, Shanhui

318

Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop  

SciTech Connect (OSTI)

The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

Not Available

1994-06-01T23:59:59.000Z

319

Method of and apparatus for removing silicon from a high temperature sodium coolant  

DOE Patents [OSTI]

A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Yunker, Wayne H. (Richland, WA); Christiansen, David W. (Kennewick, WA)

1987-01-01T23:59:59.000Z

320

Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint  

SciTech Connect (OSTI)

Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Antifuse with a single silicon-rich silicon nitride insulating layer  

DOE Patents [OSTI]

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22T23:59:59.000Z

322

Method for forming fibrous silicon carbide insulating material  

DOE Patents [OSTI]

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Wei, G.C.

1983-10-12T23:59:59.000Z

323

Method for forming fibrous silicon carbide insulating material  

DOE Patents [OSTI]

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Wei, George C. (Oak Ridge, TN)

1984-01-01T23:59:59.000Z

324

Status and performance of the CDF Run II silicon detector  

SciTech Connect (OSTI)

The CDF Run II silicon detector with its 8 layers of double- and single-sided silicon microstrip sensors and a total 722,432 readout channels is one of the largest silicon detector devices currently in use by a HEP experiment. We report our experience commissioning and operating this complex device during the first 4 years of Run II. As the luminosity delivered by the Tevatron increases, we have observed measurable effects of radiation damage in studies of charge collection and noise versus applied bias voltage at many different integrated luminosities. We discuss these studies and their impact on the expected lifetime of the detector.

Boveia, A.; /UC, Santa Barbara

2005-01-01T23:59:59.000Z

325

Separation of Nuclear Fuel Surrogates from Silicon Carbide Inert Matrix  

SciTech Connect (OSTI)

The objective of this project has been to identify a process for separating transuranic species from silicon carbide (SiC). Silicon carbide has become one of the prime candidates for the matrix in inert matrix fuels, (IMF) being designed to reduce plutonium inventories and the long half-lives actinides through transmutation since complete reaction is not practical it become necessary to separate the non-transmuted materials from the silicon carbide matrix for ultimate reprocessing. This work reports a method for that required process.l

Dr. Ronald Baney

2008-12-15T23:59:59.000Z

326

Method of fabricating silicon carbide coatings on graphite surfaces  

DOE Patents [OSTI]

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

Varacalle, Jr., Dominic J. (Idaho Falls, ID); Herman, Herbert (Port Jefferson, NY); Burchell, Timothy D. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

327

Control of carbon balance in a silicon smelting furnace  

DOE Patents [OSTI]

The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

Dosaj, V.D.; Haines, C.M.; May, J.B.; Oleson, J.D.

1992-12-29T23:59:59.000Z

328

Method of fabricating silicon carbide coatings on graphite surfaces  

DOE Patents [OSTI]

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

1994-07-26T23:59:59.000Z

329

Silicon nitride protective coatings for silvered glass mirrors  

DOE Patents [OSTI]

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO)

1988-01-01T23:59:59.000Z

330

Silicon nitride protective coatings for silvered glass mirrors  

DOE Patents [OSTI]

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Tracy, C.E.; Benson, D.K.

1984-07-20T23:59:59.000Z

331

Method of preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals  

DOE Patents [OSTI]

A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

Peng, Yu-Min (Hsinchu, TW); Wang, Jih-Wen (Hsinchu, TW); Liue, Chun-Ying (Tau-Yung, TW); Yeh, Shinn-Horng (Kaohsiung, TW)

1994-01-01T23:59:59.000Z

332

A study of laser annealing effects in boron ion implanted polycrystalline silicon films  

E-Print Network [OSTI]

, large-grain polycrysta11ine silicon has potential use for large volume production of low cost solar cells [1-3] . Polycrystalline silicon is easy to prepare and is compa- tible with monolithic silicon integrated circuit technology; however... of 2O pico second [5]. The MOSFET's fabricated to date on thin films of polycrystalline silicon have also exhibited poor transconductance [5J. It has been reported that the electrical properties of ion implanted polycrystalline silicon can...

Suh, Inhak Harry

1982-01-01T23:59:59.000Z

333

Equilibrium shapes of polycrystalline silicon nanodots  

SciTech Connect (OSTI)

This study is concerned with the topography of nanostructures consisting of arrays of polycrystalline nanodots. Guided by transmission electron microscopy (TEM) measurements of crystalline Si (c-Si) nanodots that evolved from a “dewetting” process of an amorphous Si (a-Si) layer from a SiO{sub 2} coated substrate, we investigate appropriate formulations for the surface energy density and transitions of energy density states at grain boundaries. We introduce a new numerical minimization formulation that allows to account for adhesion energy from an underlying substrate. We demonstrate our approach first for the free standing case, where the solutions can be compared to well-known Wulff constructions, before we treat the general case for interfacial energy settings that support “partial wetting” and grain boundaries for the polycrystalline case. We then use our method to predict the morphologies of silicon nanodots.

Korzec, M. D., E-mail: korzec@math.tu-berlin.de; Wagner, B., E-mail: bwagner@math.tu-berlin.de [Department of Mathematics, Technische Universität Berlin, Straße des 17. Juni 136, 10623 Berlin (Germany); Roczen, M., E-mail: maurizio.roczen@physik.hu-berlin.de [Department of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin (Germany); Schade, M., E-mail: martin.schade@physik.uni-halle.de [Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Straße 3, 06120 Halle (Germany); Rech, B., E-mail: bernd.rech@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany)

2014-02-21T23:59:59.000Z

334

Bipolar monolithic preamplifiers for SSC silicon calorimetry  

SciTech Connect (OSTI)

This paper describes preamplifiers designed specifically to address the requirements of silicon calorimetry for the Superconducting Super Collider (SSC). Eight different preamplifiers designed for detector capacitances ranging from 20 pF to 500 pF and operating temperatures from 25{degree}C to {minus}20{degree}C are discussed. The preamplifiers were fabricated with two different high-frequency processes (one with the VTC, Inc. VJ900 process, seven with the Harris Semiconductor VHF Process). The different topologies and their features are discussed in addition to the design methodologies employed. The results for noise, power consumption, speed, and radiation damage effects as well as data for post-damage annealing are presented for the VTC process preamplifier. Simulations for the VHF Process circuits are presented. This work was funded through SSC Generic Detector funding, SSC Detector Subsystem funding, and the Oak Ridge National Laboratory (ORNL) Detector Center.

Britton, C.L. Jr.; Todd, R.A.; Bauer, M.L. (Oak Ridge National Lab., TN (USA)); Kennedy, E.J. (Tennessee Univ., Knoxville, TN (USA). Dept. of Electrical and Computer Engineering Oak Ridge National Lab., TN (USA)); Bugg, W.M. (Tennessee Univ., Knoxville, TN (USA). Dept. of Physics)

1990-01-01T23:59:59.000Z

335

Comparison Measurements of Silicon Carbide Temperature Monitors  

SciTech Connect (OSTI)

As part of the efforts initiated through the Advanced Test Reactor (ATR) National Scientific User Facility (NSUF) program to make Silicon Carbide (SiC) temperature monitors available, a capability was developed at the Idaho National Laboratory (INL) to complete post-irradiation evaluations of these monitors. INL selected the resistance measurement approach for detecting peak irradiation temperature from SiC temperature monitors. To demonstrate this new capability, comparison measurements were completed by INL and Oak Ridge National Laboratory (ORNL) on identical samples subjected to identical irradiation conditions. Results reported in this paper indicate that the resistance measurement approach can yield similar peak irradiation temperatures if appropriate equipment is used and appropriate procedures are followed.

J. L. Rempe; K. G. Condie; D. L. Knudson; L. L. Snead

2010-06-01T23:59:59.000Z

336

27. 5-percent silicon concentrator solar cells  

SciTech Connect (OSTI)

Recent advances in silicon solar cells using the backside point-contact configuration have been extended resulting in 27.5-percent efficiencies at 10 W/sq cm (100 suns, 24 C), making these the most efficient solar cells reported to date. The one-sun efficiencies under an AM1.5 spectrum normalized to 100 mW/sq cm are 22 percent at 24 C based on the design area of the concentrator cell. The improvements reported here are largely due to the incorportation of optical light trapping to enhance the absorption of weakly absorbed near bandgap light. These results approach the projected efficiencies for a mature technology which are 23-24 percent at one sun and 29 percent in the 100-350-sun (10-35 W/sq cm) range. 10 references.

Sinton, R.A.; Kwark, Y.; Gan, J.Y.; Swanson, R.M.

1986-10-01T23:59:59.000Z

337

Imaging topological edge states in silicon photonics  

E-Print Network [OSTI]

Topological features - global properties not discernible locally - emerge in systems from liquid crystals to magnets to fractional quantum Hall systems. Deeper understanding of the role of topology in physics has led to a new class of matter: topologically - ordered systems. The best known examples are quantum Hall effects, where insensitivity to local properties manifests itself as conductance through edge states that is insensitive to defects and disorder. Current research in engineering topological order primarily focuses on analogies to quantum Hall systems, where the required magnetic field is synthesized in non-magnetic systems. Here, we realize synthetic magnetic fields for photons at room temperature, using linear Silicon photonics. We observe, for the first time, topological edge states of light in a two - dimensional system and show their robustness against intrinsic and introduced disorder. Our experiment demonstrates the feasibility of using photonics to realize topological order in both the non-interacting and many-body regimes.

M. Hafezi; S. Mittal; J. Fan; A. Migdall; J. Taylor

2015-04-03T23:59:59.000Z

338

Junction-side illuminated silicon detector arrays  

DOE Patents [OSTI]

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30T23:59:59.000Z

339

Silicon carbide mirrors for high power applications  

SciTech Connect (OSTI)

The advent of synchrotron radiation (SR) sources and high energy lasers (HEL) in recent years has brought about the need for optical materials that can withstand the harsh operating conditions in such devices. SR mirrors must be ultra-high vacuum compatible, must withstand intense x-ray irradiation without surface damage, must maintain surface figure under thermal loading and must be capable of being polished to an extremely smooth surface finish. Chemical vapor deposited (CVD) silicon carbide in combination with sintered substrate material meets these requirements and offers additional benefits as well. It is an extremely hard material and offers the possibility of being cleaned and recoated many times without degradation of the surface finish, thereby prolonging the lifetime of expensive optical components. It is an extremely strong material and offers the possibility of weight reduction over conventional mirror materials.

Takacs, P.Z.

1981-11-01T23:59:59.000Z

340

A hybrid double-dot in silicon  

SciTech Connect (OSTI)

We report electrical measurements of a single arsenic dopant atom in the tunnel barrier of a silicon single-electron transistor (SET). In addition to performing the electrical characterisation of the individual dopants, we study the series electrical transport through the dopant and SET. We measure the bias triangles of this hybrid double-dot and show that we can tune the electrostatic coupling between the two sub-systems. Additionally, we measured SET in which an additional plunger gate allows the reduction of the electron number in the SET down to the few-electron regime where the dot presents well-defined spin configurations. Finally, we discuss the challenges of operating a dopant-dot hybrid system in the few-electron regime.

Gonzalez-Zalba, M. F.; Heiss, D.; Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge (United Kingdom)

2013-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

A low-leakage 3-way silicon microvalve  

E-Print Network [OSTI]

This thesis presents an electrostatically actuated silicon microvalve designed for use in a miniature gas chromatography system for sample preparation and injection. In contrast to prior art, this design combines an ...

Sihler, Joachim, 1971-

2004-01-01T23:59:59.000Z

342

Silicon Valley Power- Commercial Energy Efficiency Rebate Program  

Broader source: Energy.gov [DOE]

Silicon Valley Power (SVP) offers a variety rebates to its business customers, capped at a maximum total incentive of $500,000 per customer per year. Rebates are available for the following:

343

Simulation of iron impurity gettering in crystalline silicon solar cells  

E-Print Network [OSTI]

This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

Powell, Douglas M. (Douglas Michael)

2012-01-01T23:59:59.000Z

344

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network [OSTI]

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

345

amorphous silicon based: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The researchers have managed to create Rogers, John A. 279 A Silicon-Based Micro Gas Turbine Engine for Power Generation CERN Preprints Summary: This paper reports on our...

346

amorphous silicon carbide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The high power densities expected for the MIT microengine (silicon MEMS-based micro-gas turbine generator) require the turbine and compressor spool to rotate at a very high...

347

ablating silicon carbide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The high power densities expected for the MIT microengine (silicon MEMS-based micro-gas turbine generator) require the turbine and compressor spool to rotate at a very high...

348

advanced silicon carbide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The high power densities expected for the MIT microengine (silicon MEMS-based micro-gas turbine generator) require the turbine and compressor spool to rotate at a very high...

349

advanced silicon processing: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The high power densities expected for the MIT microengine (silicon MEMS-based micro-gas turbine generator) require the turbine and compressor spool to rotate at a very high...

350

Single-layer graphene on silicon nitride micromembrane resonators  

E-Print Network [OSTI]

Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization ...

Schmid, Silvan

351

Conductive Rigid Skeleton Supported Silicon as High-Performance...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and technologies. Citation: Chen X, X Li, F Ding, W Xu, J Xiao, Y Cao, P Meduri, J Liu, GL Graff, and J Zhang.2012."Conductive Rigid Skeleton Supported Silicon as High-Performance...

352

Athermal photonic devices and circuits on a silicon platform  

E-Print Network [OSTI]

In recent years, silicon based optical interconnects has been pursued as an eective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and ...

Raghunathan, Vivek

2013-01-01T23:59:59.000Z

353

Fabrication and characterization of germanium-on-silicon photodiodes  

E-Print Network [OSTI]

Germanium is becoming an increasingly popular material to use in photonic systems. Due to its strong absorption in the near infrared and its relative ease of integration on silicon, it is a promising candidate for the ...

DiLello, Nicole Ann

2012-01-01T23:59:59.000Z

354

Supporting Information: Holey Silicon as efficient thermoelectric material  

E-Print Network [OSTI]

Supporting Information: Holey Silicon as efficient thermoelectric material Jinyao Tang1, 3, 3 1 Department of Chemistry, 2 Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA. 3 Materials Sciences Division, Lawrence Berkeley National

Yang, Peidong

355

Anti-reflective nanoporous silicon for efficient hydrogen production  

DOE Patents [OSTI]

Exemplary embodiments are disclosed of anti-reflective nanoporous silicon for efficient hydrogen production by photoelectrolysis of water. A nanoporous black Si is disclosed as an efficient photocathode for H.sub.2 production from water splitting half-reaction.

Oh, Jihun; Branz, Howard M

2014-05-20T23:59:59.000Z

356

Temperature Dependence of the EUV Responsivity of Silicon Photodiodes  

SciTech Connect (OSTI)

Responsivity of silicon photodiodes was measured from -100 C to +50 C in the 3 to 250 nm wavelength range using synchrotron and laboratory radiation sources. Two types of silicon photodiodes were studied, the AXUV series having a thin nitrided silicon dioxide surface layer and the SXUV series having a thin metal silicide surface layer. Depending on the wavelength, the responsivity increases with temperature with the rates 0.013%/C to 0.053%/C for the AXUV photodiode and 0.020%/C to 0.084%/C for the SXUV photodiode. The increase in responsivity is consistent with the decrease in the silicon bandgap energy which causes a decrease in the pair creation energy. These results are particularly important for dose measurement in extreme ultraviolet (EUV) lithography steppers and sources since the detector temperature often increases because of the high EUV intensities involved.

Kjornrattanawanich,B.; Korde, R.; Boyer, C.; Holland, G.; Seely, J.

2006-01-01T23:59:59.000Z

357

Reactor physics assessment of thick silicon carbide clad PWR fuels  

E-Print Network [OSTI]

High temperature tolerance, chemical stability and low neutron affinity make silicon carbide (SiC) a potential fuel cladding material that may improve the economics and safety of light water reactors (LWRs). "Thick" SiC ...

Bloore, David A. (David Allan)

2013-01-01T23:59:59.000Z

358

Virus-Enabled Silicon Anode for Lithium-Ion Batteries  

SciTech Connect (OSTI)

A novel three-dimensional Tobacco mosaic virus assembled silicon anode is reported. This electrode combines genetically modified virus templates for the production of high aspect ratio nanofeatured surfaces with electroless deposition to produce an integrated nickel current collector followed by physical vapor deposition of a silicon layer to form a high capacity silicon anode. This composite silicon anode produced high capacities (3300 mAh/g), excellent charge?discharge cycling stability (0.20% loss per cycle at 1C), and consistent rate capabilities (46.4% at 4C) between 0 and 1.5 V. The biological templated nanocomposite electrode architecture displays a nearly 10-fold increase in capacity over currently available graphite anodes with remarkable cycling stability.

Chen, X L; Gerasopoulos, K; Guo, J C; Brown, A; Wang, Chunsheng; Ghodssi, Reza; Culver, J N

2010-01-01T23:59:59.000Z

359

Safety of light water reactor fuel with silicon carbide cladding  

E-Print Network [OSTI]

Structural aspects of the performance of light water reactor (LWR) fuel rod with triplex silicon carbide (SiC) cladding - an emerging option to replace the zirconium alloy cladding - are assessed. Its behavior under accident ...

Lee, Youho

2013-01-01T23:59:59.000Z

360

Micro-cleaved ridge lasers for optoelectronic integration on silicon  

E-Print Network [OSTI]

This thesis addresses one of the last hurdles to optoelectronic integration on silicon, namely the incorporation of room-temperature, electrically-pumped edge-emitting laser diodes. To this end, thin (-6 pm) InP-based ...

Rumpler, Joseph John, 1976-

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Silicon Valley Power- Solar Electric Buy Down Program  

Broader source: Energy.gov [DOE]

Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as...

362

Surface kinetics modeling of silicon oxide etching in fluorocarbon plasmas  

E-Print Network [OSTI]

Fluorocarbon plasma for silicon oxide etching is a complicated system involving many ion and neutral species. Depending on the plasma condition, many difficulties arise such as RIE lag, etch stop, and low selectivity to ...

Kwon, Ohseung, 1969-

2004-01-01T23:59:59.000Z

363

Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon  

E-Print Network [OSTI]

and investigate fundamental properties. Noble metal nanoparticles made of gold or silver are grown in cavities in monocrystalline silicon formed by helium ion implantation and high temperature annealing at depth greater than 500 nm from the surface. Metals...

Martin, Michael S.

2013-08-13T23:59:59.000Z

364

Rapid Wolff–Kishner reductions in a silicon carbide microreactor  

E-Print Network [OSTI]

Wolff–Kishner reductions are performed in a novel silicon carbide microreactor. Greatly reduced reaction times and safer operation are achieved, giving high yields without requiring a large excess of hydrazine. The corrosion ...

Newman, Stephen G.

2014-01-01T23:59:59.000Z

365

Understanding Why Silicon Anodes of Lithium-Ion Batteries Are...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Understanding Why Silicon Anodes of Lithium-Ion Batteries Are Fast to Discharge but Slow to Charge December 02, 2014 Measured and calculated rate-performance of a Si thin-film (70...

366

Silicon carbidonitride based phosphors and lighting devices using the same  

DOE Patents [OSTI]

Disclosed herein are novel families of silicon carbidonitride phosphor compositions. In certain embodiments, optimal ranges of carbon content have been identified which provide excellent luminescence and thermal stability characteristics.

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2013-09-17T23:59:59.000Z

367

Field emission study of cobalt ion implanted porous silicon  

E-Print Network [OSTI]

Porous silicon has become potentially important material for microelectronics applications. By using low energy implantation and energy scan implantation, a stable silicide with good electrical conductivity can be formed, and can be used...

Liu, Hongbiao

1995-01-01T23:59:59.000Z

368

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20T23:59:59.000Z

369

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

370

Temperature dependence of ambipolar diffusion in silicon-on-insulator  

E-Print Network [OSTI]

Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a ...

Zhao, Hui

2008-03-01T23:59:59.000Z

371

Process and apparatus for casting multiple silicon wafer articles  

DOE Patents [OSTI]

Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

Nanis, Leonard (Palo Alto, CA)

1992-05-05T23:59:59.000Z

372

High temperature investigations of crystalline silicon solar cell materials  

E-Print Network [OSTI]

Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

Hudelson, George David Stephen, III

2009-01-01T23:59:59.000Z

373

Understanding and improving hole transport in hydrogenated amorphous silicon photovoltaics  

E-Print Network [OSTI]

While hydrogenated amorphous silicon (a-Si:H) solar cells have been studied extensively for the previous four decades, the low performance of the devices is still not well understood. The poor efficiency (below 10%, even ...

Johlin, Eric (Eric Carl)

2014-01-01T23:59:59.000Z

374

Studies of advanced integrated nano-photonic devices in silicon  

E-Print Network [OSTI]

Electronic-photonic integrated circuits (EPICs) are a promising technology for overcoming bandwidth and power-consumption bottlenecks of traditional integrated circuits. Silicon is a good candidate for building such devices, ...

Dahlem, Marcus

2011-01-01T23:59:59.000Z

375

Dislocation density reduction in multicrystalline silicon through cyclic annealing  

E-Print Network [OSTI]

Multicrystalline silicon solar cells are an important renewable energy technology that have the potential to provide the world with much of its energy. While they are relatively inexpensive, their efficiency is limited by ...

Vogl, Michelle (Michelle Lynn)

2011-01-01T23:59:59.000Z

376

Potential applications of a toughened silicon-based alloy  

E-Print Network [OSTI]

Silicon has long been used as an alloying element in various metal alloys, in engineered ceramics, and in the semiconductor industry. However, due to its intrinsic low fracture toughness, it is generally perceived as a ...

Lei, Wang S

2008-01-01T23:59:59.000Z

377

Temperature dependency of MOSFET device characteristics in 4H-and 6H-silicon carbide (SiC)  

E-Print Network [OSTI]

Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC) Md was arranged by Prof. A. Iliadis Abstract The advantages of silicon carbide (SiC) over silicon are significant; Silicon carbide; Temperature variation effect 1. Introduction Silicon carbide, a wide bandgap material

Tolbert, Leon M.

378

Porous silicon membranes as ultrafiltration devices: a feasibility study  

E-Print Network [OSTI]

and several liquids, and the experimental results are compared to model predictions. Hexane, ethanol, and ethanol-water mixtures permeated the porous silicon membranes as liquids at pressure differentials greater than 100 psig. The membranes exhibited much... % HNOs and 4 parts water. However, the porous silicon layers became fragile during the etching and were easy to break. Experimental results for flow tests on selected samples after chemical etching are shown in the next section. 14 GAS FLOW TESTING...

Hong, Xiangrong

1993-01-01T23:59:59.000Z

379

NANO EXPRESS Open Access Characterization of silicon heterojunctions for  

E-Print Network [OSTI]

at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c

Paris-Sud XI, Université de

380

Photonic Crystal Cavities in Cubic Polytype Silicon Carbide Films  

E-Print Network [OSTI]

We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1250 - 1600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

Radulaski, Marina; Buckley, Sonia; Rundquist, Armand; Provine, J; Alassaad, Kassem; Ferro, Gabriel; Vu?kovi?, Jelena

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Target molecules detection by waveguiding in a photonic silicon membrane  

DOE Patents [OSTI]

Disclosed herein is a porous silicon filter capable of binding and detecting biological and chemical target molecules in liquid or gas samples. A photonic waveguiding silicon filter with chemical and/or biological anchors covalently attached to the pore walls bind target molecules. The system uses transmission curve engineering principles to allow measurements to be made in situ and in real time to detect the presence of various target molecules and calculate the concentration of bound target.

Letant, Sonia E. (Livermore, CA); Van Buuren, Anthony (Livermore, CA); Terminello, Louis (Danville, CA); Hart, Bradley R. (Brentwood, CA)

2006-12-26T23:59:59.000Z

382

Status and performance of the CDF Run II silicon detector  

SciTech Connect (OSTI)

The CDF silicon detector is one of the largest silicon detectors in operation. It has a total of 722,432 electronic channels, and it covers a sensor surface area of 6 m{sup 2}. The detector has been operating reliably for five years, and it has recorded 1.5 fb{sup -1} of data. This article discusses experiences of operating such a large, complex system as well as the longevity of the detector.

Maki, Tuula; /Helsinki Inst. of Phys.

2006-10-01T23:59:59.000Z

383

3D, Flash, Induced Current Readout for Silicon Sensors  

SciTech Connect (OSTI)

A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

Parker, Sherwood I.

2014-06-07T23:59:59.000Z

384

Target molecules detection by waveguiding in a photonic silicon membrane  

DOE Patents [OSTI]

Disclosed herein is a photonic silicon filter capable of binding and detecting biological and chemical target molecules in liquid or gas samples. A photonic waveguiding silicon filter with chemical and/or biological anchors covalently attached to the pore walls selectively bind target molecules. The system uses transmission curve engineering principles to allow measurements to be made in situ and in real time to detect the presence of various target molecules and determine the concentration of bound target.

Letant, Sonia; Van Buuren, Anthony; Terminello, Louis

2004-08-31T23:59:59.000Z

385

Nuclear magnetic resonance study of methane adsorbed on porous silicon  

E-Print Network [OSTI]

NUCLEAR MAGNETIC RESONANCE STUDY OF METHANE ADSORBED ON POROUS SILICON A Thesis by FENG I I Submitted to the Office of Graduate Studies of Texas ARM University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE... May 1992 Major Subject: Physics NUCLEAR MAGNETIC RESONANCE STUDY OF METHANE ADSORBED ON POROUS SILICON A Thesis by FENG LI Approved as to style and content by: . P. Kirk (Chair of Committee) i G. Agnolet (Member) J. H. Ross, r (Member) M...

Li, Feng

1992-01-01T23:59:59.000Z

386

The study of methane adsorbed on porous silicon by NMR  

E-Print Network [OSTI]

THE STUDY OF METHANE ADSORBED ON POROUS SILICON BY NMR A Thesis by ADAM KAZIMIERZ CZERMAK Submitted to the Graduate College of Texas ARM University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE August 1986... Major Subject: Physics THE STUDY OF METHANE ADSORBED ON POROUS SILICON BY NMR A Thesis by ADAM KAZIMIERZ CZERMAK Approved as to style and content by: e Wile . Kirk (Chairman of Committee) J eevak M. Par pi a (Member) Randall L. Geiger...

Czermak, Adam Kazimierz

1986-01-01T23:59:59.000Z

387

Two dimensional properties of methane adsorbed on porous silicon  

E-Print Network [OSTI]

TWO DIMENSIONAL PROPERTIES OF METHANE ADSORBED ON POROUS SILICON A Thesis by RICHARD FRANKLIN TENNIS Submitted to the Office of Graduate Studies of Texas ASM University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE May 1989 Major Subject: Physics TWO DIMENSIONAL PROPERTIES OF METHANE ADSORBED ON POROUS SILICON A Thesis by RICHARD FRANKLIN TENNIS Approved as to style and content by: P. Kirk (C ir of Committee) Glenn olet (M er) Da J. Ernst...

Tennis, Richard Franklin

1989-01-01T23:59:59.000Z

388

Method for forming silicon on a glass substrate  

DOE Patents [OSTI]

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

McCarthy, A.M.

1995-03-07T23:59:59.000Z

389

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer  

DOE Patents [OSTI]

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Cardinale, Gregory F. (Oakland, CA)

2002-01-01T23:59:59.000Z

390

Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial  

SciTech Connect (OSTI)

In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

2004-11-08T23:59:59.000Z

391

Etching process for improving the strength of a laser-machined silicon-based ceramic article  

DOE Patents [OSTI]

A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

Copley, S.M.; Tao, H.; Todd-Copley, J.A.

1991-06-11T23:59:59.000Z

392

Etching process for improving the strength of a laser-machined silicon-based ceramic article  

DOE Patents [OSTI]

A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

Copley, Stephen M. (Palos Verdes, CA); Tao, Hongyi (Covina, CA); Todd-Copley, Judith A. (Palos Verdes, CA)

1991-01-01T23:59:59.000Z

393

Electrical overstress failure in silicon solar cells  

SciTech Connect (OSTI)

A solar-cell electrical-overstress-failure model and the results of experimental measurements of threshold pulsed failure currents on four types of silicon solar cells are presented. The transient EMP field surrounding a lightning stroke has been identified as a potential threat to a photovoltaic array, yet failure analysis of solar cells in a pulsed environment had not previously been reported. Failure in the low-resistivity concentrator cells at pulse widths between 1 ..mu..s and 1 ms occurred initially in the junction. Finger damage in the form of silver melting occurs at currents only slightly greater than that required for junction damage. The result of reverse-bias transient-overstress tests on high-resistivity (10 ..cap omega..cm) cells demonstrated that the predominant failure mode was due to edge currents. These flat-plate cells failed at currents of only 4 to 20 A, which is one or two orders of magnitude below the model predictions. It thus appears that high-resistivity flat-plate cells are quite vulnerable to electrical overstress which could be produced by a variety of mechanisms.

Pease, R.L.; Barnum, J.R.; van Lint, V.A.J.; Vulliet, W.V.; Wrobel, T.F.

1982-11-01T23:59:59.000Z

394

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon metal and alloys (excluding semiconductor-grade silicon)  

E-Print Network [OSTI]

%; China, 16%; South Africa, 13%; Canada, 12%; and other, 39%. Tariff: Item Number Normal Trade Relations metal: Brazil, 37%; South Africa, 25%; Canada, 14%; Norway, 6%; and other, 18%. Total: Brazil, 20 energy costs. Demand for silicon metal comes primarily from the aluminum and chemical industries

395

Quantitative analysis of defects in silicon. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low-Cost Solar Array Project. Final report  

SciTech Connect (OSTI)

The complete procedures for the defect analysis of silicon samples using a QTM-720 Image Analyzing System are described, chemical polishing, etching, and QTM operation are discussed. The data from one hundred and seventy four (174) samples, and a discussion of the data are included. The data include twin boundary density, dislocation pit density, and grain boundary length. (WHK)

Natesh, R.; Smith, J.M.; Bruce, T.; Qidwai, H.A.

1980-04-01T23:59:59.000Z

396

X-ray and synchrotron studies of porous silicon  

SciTech Connect (OSTI)

The results of comprehensive studies of layers of porous silicon of different conductivity types, grown by anodizing standard Si(111) substrates in an electrolyte based on fluoric acid and ethanol with the addition of 5% of iodine and kept in air for a long time, are discussed. Measurements are performed by scanning electron microscopy, high-resolution X-ray diffraction, and ultrasoft X-ray spectroscopy using synchrotron radiation. The structural parameters of the layers (thickness, strain, and porosity) and atomic and chemical composition of the porous-silicon surface are determined. It is found that an oxide layer 1.5-2.3-nm thick is formed on the surface of the silicon skeleton. The near-edge fine structure of the Si 2p absorption spectrum of this layer corresponds to the fine structure of the 2p spectrum of well coordinated SiO{sub 2}. In this case, the fine structure in the Si 2p-edge absorption region of the silicon skeleton is identical to that of the 2p absorption spectrum of crystalline silicon.

Sivkov, V. N., E-mail: svn@dm.komisc.ru [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation); Lomov, A. A. [Russian Academy of Sciences, Physical-Technological Institute (Russian Federation)] [Russian Academy of Sciences, Physical-Technological Institute (Russian Federation); Vasil'ev, A. L. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)] [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Nekipelov, S. V. [Komi State Pedagogical Institute (Russian Federation)] [Komi State Pedagogical Institute (Russian Federation); Petrova, O. V. [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation)] [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation)

2013-08-15T23:59:59.000Z

397

In situ tensile and creep testing of lithiated silicon nanowires  

SciTech Connect (OSTI)

We present experimental results for uniaxial tensile and creep testing of fully lithiated silicon nanowires. A reduction in the elastic modulus is observed when silicon nanowires are alloyed with lithium and plastic deformation becomes possible when the wires are saturated with lithium. Creep testing was performed at fixed force levels above and below the tensile strength of the material. A linear dependence of the strain-rate on the applied stress was evident below the yield stress of the alloy, indicating viscous deformation behavior. The observed inverse exponential relationship between wire radius and strain rate below the yield stress indicates that material transport was controlled by diffusion. At stress levels approaching the yield strength of fully lithiated silicon, power-law creep appears to govern the strain-rate dependence on stress. These results have direct implications on the cycling conditions, rate-capabilities, and charge capacity of silicon and should prove useful for the design and construction of future silicon-based electrodes.

Boles, Steven T.; Kraft, Oliver [Institute for Applied Materials, KIT, 76344 Eggenstein-Leopoldshafen (Germany)] [Institute for Applied Materials, KIT, 76344 Eggenstein-Leopoldshafen (Germany); Thompson, Carl V. [Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139 (United States)] [Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139 (United States); Mönig, Reiner [Institute for Applied Materials, KIT, 76344 Eggenstein-Leopoldshafen (Germany) [Institute for Applied Materials, KIT, 76344 Eggenstein-Leopoldshafen (Germany); Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), 89069 Ulm (Germany)

2013-12-23T23:59:59.000Z

398

CDF Run IIb silicon: Stave design and testing  

SciTech Connect (OSTI)

The CDF Silicon Vertex Detectors (SVX) have been shown to be excellent tools for heavy flavor physics, with the secondary vertex detection and good vertex resolution.The CDF RunIIb Silicon Vertex Detector (SVXIIb) was designed to be a radiation tolerant replacement for the current SVXII which was not anticipated to survive the projected Run II luminosity dose. The outer five layers use identical structural elements, called staves, to support six silicon sensors on each side. The stave is composed of carbon fiber skins on a foam core with a built-in cooling tube. Copper on Kapton bus cable carriers power and data/control signals underneath three silicon modules on each side of the stave. A Hybrid equipped with four new SVX4 chips are used to readout two silicon sensors on each module which can be readout and tested independently. This new design concept leads to a very compact mechanical and electrical detecting unit, allowing streamline production and ease of testing and installation. A description of the design and mechanical performance of the stave is given. They also present here results on the electrical performance obtained using prototype staves as well as results with the first pre-production parts.

Rong-Shyang Lu

2003-11-07T23:59:59.000Z

399

A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature  

E-Print Network [OSTI]

Silicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for ...

Moon, H.-S.

400

Luminescent, quantum dot-based anti-reflective coatings for crystalline silicon photovoltaics  

E-Print Network [OSTI]

This thesis demonstrates and evaluates the potential application of luminescent quantum dot/polymer solutions on crystalline silicon photovoltaics. After spin coating the QD/polymer onto silicon photodiodes, an increase ...

Bruer, Garrett (Garrett A.)

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Femtosecond-laser irradiation as a platform for tailoring the optoelectronic properties of silicon  

E-Print Network [OSTI]

Silicon is the most abundant semiconductor on earth and benefits from decades of technological development driven by the integrated circuit industry. Furthermore, silicon allows for facile n-type and p-type doping, has a ...

Smith, Matthew John, Ph. D. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

402

Vertically integrated double-layer on-chip silicon membranes for 1-to-12 waveguide fanouts  

E-Print Network [OSTI]

with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction Appl. Phys. Lett. 100 metal- oxide-semiconductor (CMOS) compatible silicon photonics, which allows for integration of optical

Chen, Ray

403

Nested potassium hydroxide etching and protective coatings for silicon-based microreactors  

E-Print Network [OSTI]

We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride ...

de Mas, Nuria

404

Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting  

E-Print Network [OSTI]

We describe a method to control the sub-surface dopant profile in “hyperdoped” silicon fabricated by ion implantation and pulsed laser melting. Dipping silicon ion implanted with sulfur into hydrofluoric acid prior to ...

Recht, Daniel

405

Single-crystalline silicon lift-off films for metaloxidesemiconductor devices on arbitrary substrates  

E-Print Network [OSTI]

foils using plasma- enhanced chemical-vapor deposition CVD of hydrogen- passivated, amorphous silicon (a-Si:HGaAs/GaAs heterojunction bipolar transistors on silicon,10 and high electron mobility transistors on quartz and sapphire11

Ludwig-Maximilians-Universität, München

406

Modeling and control of a silicon substrate heater for carbon nanotube growth experiments  

E-Print Network [OSTI]

The precision engineering research group at MIT is working on carbon nanotube growth experiments on silicon substrates and in microfabricated silicon devices, to try to produce improved bulk nanotube growth. For this thesis, ...

Held, David (David A.)

2005-01-01T23:59:59.000Z

407

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-  

E-Print Network [OSTI]

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon

Pilon, Laurent

408

Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone  

E-Print Network [OSTI]

,10-phenanthrenequinone, PQ . PQ reacts with the dangling bonds, thus providing a bridge between organic semiconductors in integrating organic and silicon-based semiconductor devices.1­3 Organic- semiconductor/silicon interfaces can

409

Characterization of temperature profile in furnace and solubility of iron in silicon  

E-Print Network [OSTI]

A better understanding of the behavior of impurities, such as iron, in silicon can lead to increases in solar cell efficiency. The purpose of this thesis was to study the behavior of iron in silicon via three sub-tasks: ...

Modi, Vrajesh Y

2011-01-01T23:59:59.000Z

410

High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995  

SciTech Connect (OSTI)

The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

Maruska, P. [Spire Corp., Bedford, MA (United States)] [Spire Corp., Bedford, MA (United States)

1996-09-01T23:59:59.000Z

411

Fabrication and Performance of Silicon-Embedded Permanent-Magnet Microgenerators  

E-Print Network [OSTI]

This paper focuses on the design, fabrication, and characterization of silicon-packaged permanent-magnet (PM) microgenerators. The use of silicon packaging favors fine control on shape and dimensions in batch fabrication ...

Herrault, Florian

412

alkali-resistant silicon nitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amorphous Silicon B. L. Zink,1,2,* R. Pietri,1. Above 50 K the thermal conductivity of thin-film amorphous silicon agrees with values previously Hellman, Frances 131 Profiles:...

413

antibiotic-impregnated silicone rubber: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

414

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John  

E-Print Network [OSTI]

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev://jap.aip.org/about/rights_and_permissions #12;Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demesya

John, Sajeev

415

E-Print Network 3.0 - agile silicon tracker Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

system, based on double-sided silicon strip dectectors... of the pion tracker for HADES The pion tracker is a new detector component for the High Acceptance Di... . Silicon...

416

E-Print Network 3.0 - ams-02 silicon tracker Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

system, based on double-sided silicon strip dectectors... of the pion tracker for HADES The pion tracker is a new detector component for the High Acceptance Di... . Silicon...

417

E-Print Network 3.0 - atlas silicon tracker Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

system, based on double-sided silicon strip dectectors... of the pion tracker for HADES The pion tracker is a new detector component for the High Acceptance Di... . Silicon...

418

Silicon bulk micromachined hybrid dimensional artifact.  

SciTech Connect (OSTI)

A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

2010-03-01T23:59:59.000Z

419

WA_00_010_ROCKWELL_SCIENCE_CENTER_A_Subcontractor_of_SILICON...  

Broader source: Energy.gov (indexed) [DOE]

NTERASubcontractorofSILICON.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverof...

420

Method of and apparatus for removing silicon from a high temperature sodium coolant  

DOE Patents [OSTI]

This patent discloses a method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Yunker, W.H.; Christiansen, D.W.

1983-11-25T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Silicon Detector Dark Matter Results from the Final Exposure of CDMS II  

SciTech Connect (OSTI)

Dark Matter Search Results Using Silicon Detectors of CDMS II journal article to be submitted to Physicial Review Letters

Agnese, R.; Ahmed, Z.; Anderson, A. J.; Arrenberg, S.; Balakishiyeva, D.; Basu Thakur, R.; Bauer, D. A.; Billard, J.; Borgland, A.; Brandt, D.; Brink, P. L.; Bruch, T.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Cerdeno, D. G.; Chagani, H.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, Priscilla B.; Daal, M.; Dejongh, F.; Do Couto E Silva, E.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Filippini, J.; Fox, J.; Fritts, M.; Godfrey, G. L.; Golwala, S. R.; Hall, Jeter C.; Harris, R. H.; Hertel, S. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kennedy, A.; Kim, P.; Kiveni, M.; Koch, K.; Kos, M.; Leman, S. W.; Loer, B.; Lopez Asamar, E.; Mahapatra, R.; Mandic, V.; Martinez, C.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Moore, D. C.; Nadeau, P.; Nelson, R. H.; Page, K.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Rau, W.; Redi, P.; Reisetter, A.; Ricci, Y.; Saab, T.; Sadoulet, B.; Sander, K.; Schneck, K.; Schnee, Richard; Scorza, S.; Serfass, B.; Shank, B.; Speller, D.; Sundqvist, K. M.; Villano, A. N.; Welliver, B.; Wright, D. H.; Yellin, S.; Yen, J. J.; Yoo, J.; Young, B. A.; Zhang, J.

2013-12-16T23:59:59.000Z

422

Deposition of device quality low H content, amorphous silicon films  

DOE Patents [OSTI]

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

1995-03-14T23:59:59.000Z

423

Electric field geometries dominate quantum transport coupling in silicon nanoring  

SciTech Connect (OSTI)

Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov–Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47?K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ?B?=?0.178?T was estimated for a ring radius of 86?nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.

Lee, Tsung-Han, E-mail: askaleeg@gmail.com, E-mail: sfhu.hu@gmail.com; Hu, Shu-Fen, E-mail: askaleeg@gmail.com, E-mail: sfhu.hu@gmail.com [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)

2014-03-28T23:59:59.000Z

424

Protective coating for alumina-silicon carbide whisker composites  

DOE Patents [OSTI]

Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

Tiegs, Terry N. (Lenoir City, TN)

1989-01-01T23:59:59.000Z

425

Synthesis of silicon nitride particles in pulsed Rf plasmas  

SciTech Connect (OSTI)

Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 Mhz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but non-spherical. Post-plasma oxidation kinetics of the particles are studied with FTIR and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation.

Buss, R.J.; Babu, S.V.

1995-11-01T23:59:59.000Z

426

Electrochemical method for defect delineation in silicon-on-insulator wafers  

DOE Patents [OSTI]

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Guilinger, Terry R. (Albuquerque, NM); Jones, Howland D. T. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Medernach, John W. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

427

Interface Stability During Rapid Solidification of Silicon-Tin A thesis presented  

E-Print Network [OSTI]

Interface Stability During Rapid Solidification of Silicon-Tin A thesis presented by David Eric for the experiment were silicon and silicon-on-sapphire (SOS) wafers implanted with tin. The SOS samples were also/s, the interface might undergo breakdown at 0.3 atomic percent tin, resulting in a cellular structure with a cell

428

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Tam, S.W.

1997-02-25T23:59:59.000Z

429

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1997-01-01T23:59:59.000Z

430

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1998-01-01T23:59:59.000Z

431

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Tam, S.W.

1998-06-16T23:59:59.000Z

432

Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments  

DOE Patents [OSTI]

While silicon-containing ceramics or ceramic composites are prone to material loss in combustion gas environments, this invention introduces a method to prevent or greatly reduce the thickness loss by injecting directly an effective amount, generally in the part per million level, of silicon or silicon-containing compounds into the combustion gases.

Brun, Milivoj Konstantin (Ballston Lake, NY); Luthra, Krishan Lal (Niskayuna, NY)

2003-01-01T23:59:59.000Z

433

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical vapor deposition  

E-Print Network [OSTI]

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical February 2005 Available online 7 April 2005 Abstract The presence of thin silicon carbide intermediate of carbon atoms into the silicon carbide layer and the morphology and orientation of the diamond film

Dandy, David

434

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET)  

E-Print Network [OSTI]

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P- type 4H Silicon-Carbide 13,41, a wide, Silicon Carbide, Field effect transistor, Simulation. I. INTRODUCTION TH E BMFET operates in bipolar mode

Kumar, M. Jagadesh

435

In vitro cellular responses to silicon carbide nanoparticles: impact of physico-chemical  

E-Print Network [OSTI]

1 In vitro cellular responses to silicon carbide nanoparticles: impact of physico-chemical features of Nanoparticle Research 14, 10 (2012) 1143" DOI : 10.1007/s11051-012-1143-7 #12;2 Abstract Silicon carbide, and of the oxidation state of the surface on cellular H2O2 production. Keywords silicon carbide nanoparticles, laser

Paris-Sud XI, Université de

436

DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE  

E-Print Network [OSTI]

DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE (DIMOS) transistor structure in 4H-Silicon Carbide (SiC) is presented. Simulation for transport Silicon carbide (SiC), a wide bandgap material, shows a tremendous potential for high temperature

Tolbert, Leon M.

437

Boron Carbide and Silicon Oxide Hetero-nanonecklaces via Temperature Modulation  

E-Print Network [OSTI]

Boron Carbide and Silicon Oxide Hetero-nanonecklaces via Temperature Modulation Jifa Tian, Xingjun ReceiVed April 23, 2008 ABSTRACT: Boron carbide and silicon oxide (BCSiO) hetero-nanonecklaces have been-500 nm silicon oxide nanoballs onto 20-30 nm boron carbide nanowires. Synthetic analysis shows that a two

Gao, Hongjun

438

Silicon Carbide Power Device Characterization for HEVs Burak Ozpineci1,3  

E-Print Network [OSTI]

Silicon Carbide Power Device Characterization for HEVs Burak Ozpineci1,3 burak@ieee.org Leon M: The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features material. Another material, silicon carbide (SiC), with superior properties compared with Si, is a good

Tolbert, Leon M.

439

Benefits of Silicon Carbide Schottky Diodes in Boost APFC Operating in CCM  

E-Print Network [OSTI]

Benefits of Silicon Carbide Schottky Diodes in Boost APFC Operating in CCM Sam Ben lossless snubber to a design with a Silicon Carbide (SiC) diode without snubber. The theoretical of the Silicon Carbide (SiC) Schottky diodes (Infineon) changes the pictures completely. As will be detailed

440

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation  

E-Print Network [OSTI]

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation Yutian Cui silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic like silicon carbide (SiC) and gallium nitride (GaN) are becoming more attractive. SiC power devices

Tolbert, Leon M.

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses*  

E-Print Network [OSTI]

Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses* Burak Ozpineci1,3 burak and Education Oak Ridge, TN 37831-0117 Abstract-The emergence of silicon carbide- (SiC-) based power, silicon carbide (SiC) with its superior properties compared with Si, is a good candidate to be used

Tolbert, Leon M.

442

DOI: 10.1002/chem.200901982 Template-Synthesized Porous Silicon Carbide as an Effective Host  

E-Print Network [OSTI]

DOI: 10.1002/chem.200901982 Template-Synthesized Porous Silicon Carbide as an Effective Host, especially those that can work more du- rably under harsh conditions. Silicon carbide (SiC) is a promising has been de- veloped for the fabrication of porous silicon carbide (SiC) by means of sin- tering

Bao, Xinhe

443

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices  

E-Print Network [OSTI]

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices will be available after the conference. Abstract Silicon Carbide devices can achieve very high switching speed-mode filtering). The consequences on the switching speed are discussed. 1. Introduction Silicon carbide (Si

Paris-Sud XI, Université de

444

SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES BURAK OZPINECI1,3  

E-Print Network [OSTI]

SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES BURAK OZPINECI1,3 , LEON M. TOLBERT1,2 , SYED K carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon, silicon carbide (SiC), with superior properties compared with Si, is a good candidate to be used

Tolbert, Leon M.

445

Accepted Manuscript Abundances of presolar silicon carbide grains in primitive meteorites deter-  

E-Print Network [OSTI]

Accepted Manuscript Abundances of presolar silicon carbide grains in primitive meteorites deter.R., Alexander, C.M., Orthous-Daunay, o-R., Franchi, I.A., Hoppe, P., Abundances of presolar silicon carbide of presolar silicon carbide grains in primitive meteorites determined by NanoSIMS Jemma Davidsona,1,* , Henner

Nittler, Larry R.

446

Short-and intermediate-range structural correlations in amorphous silicon carbide: A molecular dynamics study  

E-Print Network [OSTI]

Short- and intermediate-range structural correlations in amorphous silicon carbide: A molecular-range structural correlations in amorphous silicon carbide a-SiC are studied in terms of partial pair distributions.43.Dq, 61.43.Bn, 61.66.Dk, 81.05.Gc I. INTRODUCTION Silicon carbide SiC has been receiving increasing

Southern California, University of

447

Thermal rectification at silicon-amorphous polyethylene interface Ming Hu,1,a  

E-Print Network [OSTI]

Thermal rectification at silicon-amorphous polyethylene interface Ming Hu,1,a Pawel Keblinski,1,b heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene by amorphous polymer polyethylene PE and silicon crystal. We will also show that the mecha- nism governing

Li, Baowen

448

Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John  

E-Print Network [OSTI]

Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

John, Sajeev

449

Arrays of Sealed Silicon Nanotubes As Anodes for Lithium Ion Batteries  

E-Print Network [OSTI]

Arrays of Sealed Silicon Nanotubes As Anodes for Lithium Ion Batteries Taeseup Song, Jianliang Xia ABSTRACT Silicon is a promising candidate for electrodes in lithium ion batteries due to its large reversible capacity and long-term cycle stability. KEYWORDS Lithium ion battery, silicon, nanotubes

Rogers, John A.

450

Kinetics of Initial Lithiation of Crystalline Silicon Electrodes of Lithium-Ion Batteries  

E-Print Network [OSTI]

Kinetics of Initial Lithiation of Crystalline Silicon Electrodes of Lithium-Ion Batteries Matt phase. KEYWORDS: Lithium-ion batteries, silicon, kinetics, plasticity Lithium-ion batteries already at the electrolyte/lithiated silicon interface, diffusion of lithium through the lithiated phase, and the chemical

451

Dynamics of static friction between steel and silicon Zhiping Yang, H. P. Zhang, and M. Marder  

E-Print Network [OSTI]

Dynamics of static friction between steel and silicon Zhiping Yang, H. P. Zhang, and M. Marder 4, 2008) We conducted experiments in which steel and silicon or quartz are clamped together. Even experiments where silicon and quartz are clamped on steel, motion is measured down to the nanometer scale

Texas at Austin. University of

452

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings  

E-Print Network [OSTI]

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light ABSTRACT: Enhancing the light absorption in ultrathin-film silicon solar cells is important for improving in the back reflector. KEYWORDS: Solar cells, light trapping, antireflection, crystalline silicon, absorption

Fan, Shanhui

453

Solidification of polycrystalline silicon ingots : simulation and characterization of the microstructure  

E-Print Network [OSTI]

.90 1. Introduction. The most important development in silicon solar cells is due to the substitution solidification of poly- crystalline silicon (POLYX). The capacity of the initial furnace was about 1 kg and today the silicon in a graphite crucible using induction heating furnace. The crucible is well insulated to reduce

Paris-Sud XI, Université de

454

Control mechanisms for the oceanic distribution of silicon isotopes Andre G. Wischmeyer,1  

E-Print Network [OSTI]

the silicic acid concentration and its silicon isotope composition is not a simple Rayleigh distillation curve to the Rayleigh distillation curve. Model results can be used to predict opal silicon isotope compositions of their pitfalls [Wefer et al., 1999]. [4] Recent work taking advantage of the fractionation of silicon isotopes

Paris-Sud XI, Université de

455

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 30, NO. 1, JANUARY 1, 2012 1 Integrated Hybrid Silicon Transmitter  

E-Print Network [OSTI]

the III-V and silicon can be completely transferred to the silicon wave- guide enabling integration for wave-guiding and III-V for optical gain/absorption, the design space for the hybrid platform differsJOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 30, NO. 1, JANUARY 1, 2012 1 Integrated Hybrid Silicon

Bowers, John

456

Electrical noise characteristics of a doped silicon microcantilever heater-thermometer  

E-Print Network [OSTI]

Electrical noise characteristics of a doped silicon microcantilever heater-thermometer Elise A with resistive heater-thermometers,10­13 there is a lack of published reports on the electrical noise silicon heater- thermometer cantilevers.12 However, a key difference is that doped silicon heater-thermometers

King, William P.

457

Efficient photon number detection with silicon avalanche photodiodes  

E-Print Network [OSTI]

We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection efficiency at 600 nm is measured to be 73.8%, corresponding to an avalanche probability of 91.1% of the absorbed photons, with a dark count probability below 1.1x10^{-6} per gate. With this performance and operation close to room temperature, fast-gated silicon avalanche photodiodes are ideal for optical quantum information processing that requires single-shot photon number detection.

O. Thomas; Z. L. Yuan; J. F. Dynes; A. W. Sharpe; A. J. Shields

2010-07-21T23:59:59.000Z

458

Electronic states in epitaxial graphene fabricated on silicon carbide  

SciTech Connect (OSTI)

An analytical expression for the density of states of a graphene monolayer interacting with a silicon carbide surface (epitaxial graphene) is derived. The density of states of silicon carbide is described within the Haldane-Anderson model. It is shown that the graphene-substrate interaction results in a narrow gap of {approx}0.01-0.06 eV in the density of states of graphene. The graphene atom charge is estimated; it is shown that the charge transfer from the substrate is {approx}10{sup -3}-10{sup -2}e per graphene atom.

Davydov, S. Yu., E-mail: Sergei_Davydov@mail.ru [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-08-15T23:59:59.000Z

459

Optical Damage Threshold of Silicon for Ultrafast Infrared Pulses  

SciTech Connect (OSTI)

While silicon has several properties making it an attractive material for structure-based laser-driven acceleration, its optical damage threshold, a key parameter for high-gradient acceleration, has been unknown. Here we present measurements of the optical damage threshold of crystalline silicon for ultrafast pulses in the mid-infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm extending longer toward the two-photon absorption threshold at around 2200 nm. We discuss the prevailing theories of ultrafast optical breakdown, describe the experimental setup and preliminary results, and propose a relevant performance parameter for candidate accelerator structures.

Cowan, B.; /SLAC

2006-09-07T23:59:59.000Z

460

Transmissive metallic contact for amorphous silicon solar cells  

DOE Patents [OSTI]

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Madan, A.

1984-11-29T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Effects of dietary silicon on bone characteristics of poultry  

E-Print Network [OSTI]

EFFECTS OF D ETARY SILICON GN BONE CNARACTERISTICS OF POULTRY A Thesis James Edward Plyler Submitted. to tl. e Graduate College ot Texas ASM University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE August 1977... Major Subject. : Poultry Science L'FFECT OF DI TARY. SILICON QN BONE CEARACTER1STICS OF POULTPY A Thesis James Edward Plyier Approued as to style and content by. (Chairman of omm' tee) (Head of Dep tment) (Mem e ) (Mem. er ) gC~ r? (Membe...

Plyler, James Edward

1977-01-01T23:59:59.000Z

462

Plasma-enriched chemical vapor deposition of silicon nitride on silicon carbide fibers  

SciTech Connect (OSTI)

Near stoichiometric Si:N coatings were deposited by means of PECVD on SCS-6 SiC fibers which contained a carbon-rich coating. Weight loss associated with oxidation of the outer carbon-rich coating of the as-received SiC fibers was greatly reduced for the Si:N coated SiC fibers even after 10 h heat-treatment in oxygen at 800{degrees}C. Auger Electron Spectroscopy (AES) was used to obtain elemental compositions of the as-received and Si:N coated SiC fibers after heat-treatment. Negligible amounts of oxygen were found at the carbon-rich coating of the heat-treated Si:N coated SiC fiber. These results clearly prove the effectiveness of PECVD silicon nitride coating as an oxygen diffusion barrier.

Stinespring, C.D.; Collazos, D.F.; Gupta, R.K. [West Virginia Univ., Morgantown, WV (United States)] [and others

1994-12-31T23:59:59.000Z

463

Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion  

SciTech Connect (OSTI)

ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

None

2010-09-01T23:59:59.000Z

464

Metal-like self-organization of periodic nanostructures on silicon and silicon carbide under femtosecond laser pulses  

SciTech Connect (OSTI)

Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600?nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material.

Gemini, Laura [Advanced Research Center for beam Science, Institute for Chemical Research, Kyoto University, 611-0011 Kyoto (Japan); Department of Physics, Graduate School of Science, Kyoto University, 606-85802 Kyoto (Japan); FNSPE, Czech Technical University in Prague, 11519 Prague (Czech Republic); HiLASE Project, Institute of Physics, ASCR, 18221 Prague (Czech Republic); Hashida, Masaki; Shimizu, Masahiro; Miyasaka, Yasuhiro; Inoue, Shunsuke; Tokita, Shigeki; Sakabe, Shuji [Advanced Research Center for beam Science, Institute for Chemical Research, Kyoto University, 611-0011 Kyoto (Japan); Department of Physics, Graduate School of Science, Kyoto University, 606-85802 Kyoto (Japan); Limpouch, Jiri [FNSPE, Czech Technical University in Prague, 11519 Prague (Czech Republic); Mocek, Tomas [HiLASE Project, Institute of Physics, ASCR, 18221 Prague (Czech Republic)

2013-11-21T23:59:59.000Z

465

SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS  

SciTech Connect (OSTI)

Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. This SiC made by our LSI process meets the thermal properties required for use in high temperature heat exchanger. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin. AC and DC electrical measurements were made to follow the thermal conversion of microcrystalline cellulose to carbon. This study identifies five regions of electrical conductivity that can be directly correlated to the chemical decomposition and microstructural evolution during carbonization. In Region I, a decrease in overall AC conductivity occurs due to the initial loss of the polar groups from cellulose molecules. In Region II, the AC conductivity starts to increase with heat treatment temperature due to the formation and growth of conducting carbon clusters. In Region III, a further increase of AC conductivity with increasing heat treatment temperature is obs

DR. DENNIS NAGLE; DR. DAJIE ZHANG

2009-03-26T23:59:59.000Z

466

Method for silicon carbide production by reacting silica with hydrocarbon gas  

DOE Patents [OSTI]

A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1994-01-01T23:59:59.000Z

467

Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment  

DOE Patents [OSTI]

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1982-01-01T23:59:59.000Z

468

Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals  

SciTech Connect (OSTI)

Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of {approx}6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence.

Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Warga, Joe; Li Rui; Dal Negro, Luca [Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States)

2008-04-21T23:59:59.000Z

469

4765Federal Register / Vol. 77, No. 20 / Tuesday, January 31, 2012 / Notices 1 See Crystalline Silicon Photovoltaic Cells,  

E-Print Network [OSTI]

Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China

470

Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature  

E-Print Network [OSTI]

Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature Simone film crystal growth of silicon carbide (SiC), a semiconductor syn- thesized to replace silicon in harsh

Alfè, Dario

471

Adhesion of benzocyclobutene-passivated silicon in epoxy layered structures  

E-Print Network [OSTI]

different epoxy underfill resins. The effects of environmental variables were studied with temperature. The underfill is typically an epoxy resin with thermal expansion and elas- tic properties tailoredAdhesion of benzocyclobutene-passivated silicon in epoxy layered structures Robert J. Hohlfelder

Hutchinson, John W.

472

NREL Success Stories - Quest for Inexpensive Silicon Solar Cells  

ScienceCinema (OSTI)

Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

Branz, Howard

2013-05-29T23:59:59.000Z

473

Status of the CDF Run II Silicon Detector  

SciTech Connect (OSTI)

A snapshot of the status of the CDF Run II Silicon Detector is presented, with a summary of commissioning issues since the start of Run II, current performance of the detector, and the use of the data in both the trigger and offline reconstruction.

S. Nahn

2003-04-10T23:59:59.000Z

474

Ultrasmall silicon quantum dots F. A. Zwanenburg,1,a  

E-Print Network [OSTI]

by a model based on the Poisson equation. The smallest dots 12 nm allow identification of the last charge-down planar silicon devices,1­3 produced by etching bulk materials down to nanometer dimensions, often show understanding of the specific system. This has allowed us to realize the first experimental identification

475

Metal-Insulating-Semi-Incorporation of Silicon Nanoparticles into  

E-Print Network [OSTI]

Cells Introduction Photovoltaic Cells Conclusions Acknowledgements PIN junctions · P and N type doped photovoltaic cells diode-like behavior and ideally allow for unidirectional current flow. · Two way current flow allows for carrier recombination and reduces cell efficiency. In this project, silicon based solar

476

Design and Performance of a Silicon Test Counter for HERMES  

E-Print Network [OSTI]

-detector array has been designed and constructed to investigate the prospects for large-angle trackingDesign and Performance of a Silicon Test Counter for HERMES J. Visser a , M.G. van Beuzekom a , J. For the read-out, a local front-end with 64-channel Analog Pipeline Chips (APC) has been employed. The large

477

Thermal Transport Measurement of Silicon-Germanium Nanowires  

E-Print Network [OSTI]

to the enhanced boundary scattering. Among the nanoscale semiconductor materials, Silicon-Germanium(SiGe) alloy nanowire is a promising candidate for thermoelectric materials The thermal conductivities of SiGe core-shell nanowires with core diameters of 96nm, 129...

Gwak, Yunki

2010-10-12T23:59:59.000Z

478

Intermediate Band Properties of Femtosecond-Laser Hyperdoped Silicon  

E-Print Network [OSTI]

. The high concentration of dopants forms an intermediate band (IB), instead of discrete energy levels exhibits broad-band light absorption to wavelengths deep below the corresponding bandgap energy of silicon) using secondary ion mass spectrometry. By varying the pressure of SF6, we find that the surface adsorbed

Mazur, Eric

479

Nuclear breeder reactor fuel element with silicon carbide getter  

DOE Patents [OSTI]

An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

Christiansen, David W. (Kennewick, WA); Karnesky, Richard A. (Richland, WA)

1987-01-01T23:59:59.000Z

480

RESEARCH PAPER Fouling and its mitigation in silicon microchannels used  

E-Print Network [OSTI]

RESEARCH PAPER Fouling and its mitigation in silicon microchannels used for IC chip cooling Jeffrey@rit.edu 123 Microfluid Nanofluid (2008) 5:357­371 DOI 10.1007/s10404-007-0254-4 #12;lE electrophoretic and micro- electronics. In recent years, the proliferation of Micro Electro Mechanical Systems (MEMS) has

Kandlikar, Satish

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

1996-01-01T23:59:59.000Z

482

Development of an oxidized porous silicon vacuum microtriode  

E-Print Network [OSTI]

the requirements for a gigatron cathode. In the present work, a porous sihcon-based approach is evaluated. The use of porous silicon reduces the size of a single emitter to the manometer scale, and a true two-dimensional array geometry can be approached. A wide...

Smith, Don Deewayne

1994-01-01T23:59:59.000Z

483

Linear Stability and Instability Patterns in Ion Bombarded Silicon Surfaces  

E-Print Network [OSTI]

surfaces. I experimentally determined the topographical phase diagram resulting from Ar+ ion irradiation measurements using the Multi-beam Optical Stress Sensor system were performed during amorphization of silicon by normal incidence 250 eV ion irradiation. An average compressive saturation stress built up

484

CURRENT NEWS Sandwich Solar Cells May See Off Silicon  

E-Print Network [OSTI]

CURRENT NEWS Sandwich Solar Cells May See Off Silicon May 24, 2010 A new manufacturing technique of devices using GaAs chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cells. The authors also provide a detailed cost comparison. Another advantage of the multilayer

Rogers, John A.

485

Propionic-Acid-Terminated Silicon Nanoparticles: Synthesis and Optical Characterization  

E-Print Network [OSTI]

producing water-dispersible, propionic-acid-terminated particles. From transmission electron microscope (TEM oxidation of the nanocrystals. The silicon nanocrystals could be transferred into water or methanol in acrylic acid, water, and methanol and showed essentially the same optical properties in all three solvents

Swihart, Mark T.

486

Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,  

E-Print Network [OSTI]

alternative energy solution. KEYWORDS: Nanotexture, solar cell, heterojunction, conductive polymer, light solar cell.1 Conventional Si solar cells have p-n junctions inside for an efficient extraction of lightHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

Cui, Yi

487

Bitcoin and The Age of Bespoke Silicon Michael Bedford Taylor  

E-Print Network [OSTI]

Bitcoin and The Age of Bespoke Silicon Michael Bedford Taylor University of California, San Diego ABSTRACT Recently, the Bitcoin cryptocurrency has been an interna- tional sensation. This paper tells the story of Bitcoin hard- ware: how a group of early-adopters self-organized and fi- nanced the creation

Wang, Deli

488

Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells  

E-Print Network [OSTI]

Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells Kai Zhu a,1 , E Solar, Toano, VA 23168, USA Abstract We report infrared depletion modulation spectra for near an infrared modulation spectroscopy technique that probes the optical spectra of dopants and defects

Schiff, Eric A.

489

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells  

E-Print Network [OSTI]

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Michael D. Kelzenberg, Daniel B-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response work by our group has shown that macroscopic Si wire arrays (>1 cm2 in area) suitable for photovoltaic

Atwater, Harry

490

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network [OSTI]

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

491

Evaluation and silicon nitride internal combustion engine components  

SciTech Connect (OSTI)

The feasibility of silicon nitride (Si[sub 3]N[sub 4]) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components' gas-pressure sinterable Si[sub 3]N[sub 4] (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si[sub 3]N[sub 4] components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

Voldrich, W. (Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.)

1992-04-01T23:59:59.000Z

492

Ultralow Thermal Conductivity of Isotope-Doped Silicon Nanowires  

E-Print Network [OSTI]

conductivity of SiNWs is about 2 orders of magnitude smaller than that of bulk crystals.18,19 The low thermal conductivity (0.05 W/m K) found in layered materials.22 So it is indispensable to reduce the thermal conUltralow Thermal Conductivity of Isotope-Doped Silicon Nanowires Nuo Yang, Gang Zhang,*, and Baowen

Li, Baowen

493

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network [OSTI]

;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature by Efficiency 22 Rear Panel before Lamination 23 Buried Contact Solar Cells · High Efficiency · Laser groved1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

Kaiser, Todd J.

494

Amorphous Silicon as Semiconductor Material for High Resolution LAPS  

E-Print Network [OSTI]

-08 3.E -08 0 200 400 600 800 displacem ent/µµµµm current/A 1000 2000 3000 4000 1000 2000 3000 4000-substrate Amorphous silicon -4 -2 0 2 4 0,2 0,4 0,6 0,8 1,0 photocurrenta.u. gate voltage/V 600µm x 600µm area scan

Moritz, Werner

495

Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys  

DOE Patents [OSTI]

Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide.

Stevenson, David T. (Washington Township, Armstrong County, PA); Troup, Robert L. (Murrysville, PA)

1985-01-01T23:59:59.000Z

496

Method for rapid, controllable growth and thickness, of epitaxial silicon films  

DOE Patents [OSTI]

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Wang, Qi (Littleton, CO); Stradins, Paul (Golden, CO); Teplin, Charles (Boulder, CO); Branz, Howard M. (Boulder, CO)

2009-10-13T23:59:59.000Z

497

Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys  

DOE Patents [OSTI]

Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide. 1 fig.

Stevenson, D.T.; Troup, R.L.

1985-01-01T23:59:59.000Z

498

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces  

DOE Patents [OSTI]

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09T23:59:59.000Z

499

Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation  

E-Print Network [OSTI]

is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared FTIR samples used in this work were boron doped p-type Si 100 , 0.01­0.02 cm. Porous silicon films were solution to remove the native oxide and subse- quently rinsed with de-ionized water and dried under nitro

Weiss, Sharon

500

The electroluminescence mechanism of Er{sup 3+} in different silicon oxide and silicon nitride environments  

SciTech Connect (OSTI)

Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO{sub 2} and an Er-implanted layer made of SiO{sub 2}, Si-rich SiO{sub 2}, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540?nm with EL power efficiencies in the order of 2?×?10{sup ?3} (for SiO{sub 2}:Er) or 2?×?10{sup ?4} (all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5–1.5?×?10{sup ?15?}cm{sup ?2}. Whereas the fraction of potentially excitable Er ions in SiO{sub 2} can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO{sub 2} or Si nitride compared to SiO{sub 2} as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er{sup 3+}. For all investigated devices, EL quenching cross sections in the 10{sup ?20} cm{sup 2} range and charge-to-breakdown values in the range of 1–10 C cm{sup ?2} were measured. For the present design with a SiO{sub 2} acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

Rebohle, L., E-mail: l.rebohle@hzdr.de; Wutzler, R.; Braun, M.; Helm, M.; Skorupa, W. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden - Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Berencén, Y.; Ramírez, J. M.; Garrido, B. [Dept. Electrònica, Martí i Franquès 1, Universitat de Barcelona, 08028 Barcelona (Spain); Hiller, D. [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany)

2014-09-28T23:59:59.000Z