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Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
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1

Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang Hi New  

Open Energy Info (EERE)

Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang Hi New Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang Hi New Sunshine Technology Jump to: navigation, search Name Guiyang Polysource Silicon Co Ltd (Formerly Jiayuan Sunshine, Guiyang Hi-New Sunshine Technology) Place Guiyang, Guizhou Province, China Sector Solar Product A Chinese solar grade silicon producer using metallurgical method. Coordinates 26.571899°, 106.700111° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":26.571899,"lon":106.700111,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

2

Silicone metalization  

DOE Patents (OSTI)

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2006-12-05T23:59:59.000Z

3

D0 silicon trackers  

SciTech Connect

The present Fermilab D0 silicon microstrip tracker, the silicon microstrip tracker which was designed to replace it, and plans for upgrading the present silicon tracker are described.

W. E. Cooper

2003-12-19T23:59:59.000Z

4

Amorphous Silicon  

Energy.gov (U.S. Department of Energy (DOE))

DOE has a proven track record of funding successes in amorphous silicon (a-Si)research. A list of current projects, summary of the benefits, and discussion on the production and manufacturing of...

5

Thin silicon solar cells  

SciTech Connect

The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [Astro Power Inc., Solar Park, Newark, DE (United States)

1992-12-01T23:59:59.000Z

6

Advanced silicon photonic modulators  

E-Print Network (OSTI)

Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

Sorace, Cheryl M

2010-01-01T23:59:59.000Z

7

Tritium in amorphous silicon  

SciTech Connect

Preliminary results on infrared and luminescence measurements of tritium incorporated amorphous silicon are reported. Tritium is an unstable isotope that readily substitutes hydrogen in the amorphous silicon network. Due to its greater mass, bonded tritium is found to introduce new stretching modes in the infrared spectrum. Inelastic collisions between the beta particles, produced as a result of tritium decay, and the amorphous silicon network, results in the generation of excess electron-hole pairs. Radiative recombination of these carriers is observed.

Sidhu, L.S.; Kosteski, T.; O`Leary, S.K.; Gaspari, F.; Zukotynski, S. [Univ. of Toronto, Ontario (Canada). Dept. of Electrical and Computer Engineering; Kherani, N.P.; Shmadya, W. [Ontario Hydro Technologies, Toronto, Ontario (Canada)

1996-12-31T23:59:59.000Z

8

Functionalized Silicone Nanospheres: Synthesis, Transition Metal...  

NLE Websites -- All DOE Office Websites (Extended Search)

Functionalized Silicone Nanospheres: Synthesis, Transition Metal Immobilization, and Catalytic Applications. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

9

Highly Efficient Silicon Light Emitting Diode  

E-Print Network (OSTI)

silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

10

SOLAR MARKET POWERS SILICON  

Science Journals Connector (OSTI)

SOLAR MARKET POWERS SILICON ... Polysilicon shortages are boon to manufacturers, bane of solar energy industry ... Solar energy is a relatively new market for polysilicon manufacturers. ...

JEAN-FRA&CCEDIL;NOIS TREMBLAY

2006-10-02T23:59:59.000Z

11

Micromachined silicon electrostatic chuck  

DOE Patents (OSTI)

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

Anderson, R.A.; Seager, C.H.

1996-12-10T23:59:59.000Z

12

Thermally Oxidized Silicon  

NLE Websites -- All DOE Office Websites (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

13

Graphene-Silicon Schottky Diodes  

Science Journals Connector (OSTI)

Graphene-Silicon Schottky Diodes ... We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. ... The IV characteristics measured at 100, 300, and 400 K indicate that temperature strongly influences the ideality factor of graphenesilicon Schottky diodes. ...

Chun-Chung Chen; Mehmet Aykol; Chia-Chi Chang; A. F. J. Levi; Stephen B. Cronin

2011-04-25T23:59:59.000Z

14

Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide...

15

Optical properties of nanostructured silicon-rich silicon dioxide  

E-Print Network (OSTI)

We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

Stolfi, Michael Anthony

2006-01-01T23:59:59.000Z

16

Akros Silicon | Open Energy Information  

Open Energy Info (EERE)

Akros Silicon Akros Silicon Jump to: navigation, search Name Akros Silicon Place Folsom, California Zip 95630 Product Akros Silicon specilizes in fabless semicondutors used for Power Over Ethernet, networks, and broadband. References Akros Silicon[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Akros Silicon is a company located in Folsom, California . References ↑ "Akros Silicon" Retrieved from "http://en.openei.org/w/index.php?title=Akros_Silicon&oldid=341960" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load)

17

Floating Silicon Method  

SciTech Connect

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a Photovoltaic Supply Chain and Cross Cutting Technologies grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Kellerman, Peter

2013-12-21T23:59:59.000Z

18

Electrochemical thinning of silicon  

DOE Patents (OSTI)

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Medernach, John W. (Albuquerque, NM)

1994-01-01T23:59:59.000Z

19

Electrochemical thinning of silicon  

DOE Patents (OSTI)

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Medernach, J.W.

1994-01-11T23:59:59.000Z

20

Silicon Cells | Open Energy Information  

Open Energy Info (EERE)

Cells Cells Jump to: navigation, search Name Silicon Cells Place United Kingdom Product Technology developer based upon a low cost method of processing silicon to produce a new generation of high energy density batteries. References Silicon Cells[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Silicon Cells is a company located in United Kingdom . References ↑ "Silicon Cells" Retrieved from "http://en.openei.org/w/index.php?title=Silicon_Cells&oldid=351081" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties About us Disclaimers Energy blogs

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Modified silicon carbide whiskers  

DOE Patents (OSTI)

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, T.N.; Lindemer, T.B.

1991-05-21T23:59:59.000Z

22

Modified silicon carbide whiskers  

DOE Patents (OSTI)

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

1991-01-01T23:59:59.000Z

23

Fabrication and properties of microporous silicon  

E-Print Network (OSTI)

Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

Shao, Jianzhong

1994-01-01T23:59:59.000Z

24

Silicon Photonic Components and Networks  

Science Journals Connector (OSTI)

Significant progress in silicon photonics has led to flattop filters, polarization independence, low power modulators and switches, and low dark current germanium detectors. Future...

Watts, Michael

25

Heterojunction Silicon Microwire Solar Cells  

Science Journals Connector (OSTI)

Heterojunction Silicon Microwire Solar Cells ... Center for Advanced Photovoltaic Devices and Systems, University of Waterloo, 200 University Ave W, Waterloo, Ontario N2L 3G1, Canada ...

Majid Gharghi; Ehsanollah Fathi; Boubacar Kante; Siva Sivoththaman; Xiang Zhang

2012-11-21T23:59:59.000Z

26

Nanoscale Engineering Of Radiation Tolerant Silicon Carbide....  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Of Radiation Tolerant Silicon Carbide. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide. Abstract: Radiation tolerance is determined by how effectively the...

27

AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION  

E-Print Network (OSTI)

fabricated one and two cell, amorphous silicon based mini-modules encapsulated with a modern silicone. The first module consisted of a single cell with a current collecting grid and bus bars on two sides of the cell. The current collecting grid used a spacing of 1 cm. 250 µm diameter tinned copper wire was used

Deng, Xunming

28

Recent developments in silicon calorimetry  

SciTech Connect

We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC.

Brau, J.E.

1990-11-01T23:59:59.000Z

29

Cordierite silicon nitride filters  

SciTech Connect

The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

Sawyer, J.; Buchan, B. (Acurex Environmental Corp., Mountain View, CA (United States)); Duiven, R.; Berger, M. (Aerotherm Corp., Mountain View, CA (United States)); Cleveland, J.; Ferri, J. (GTE Products Corp., Towanda, PA (United States))

1992-02-01T23:59:59.000Z

30

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

DOE Patents (OSTI)

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

1999-01-01T23:59:59.000Z

31

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites  

DOE Patents (OSTI)

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

2002-01-01T23:59:59.000Z

32

Crystalline silicon growth in nickel/a-silicon bilayer  

SciTech Connect

The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 Degree-Sign C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

Mohiddon, Md Ahamad; Naidu, K. Lakshun [School of Physics, University of Hyderabad, Hyderabad-500046 (India) and Department of Physics, University of Trento, 38123 POVO (Trento) (Italy); Dalba, G. [Department of Physics, University of Trento, 38123 POVO (Trento) (Italy); Rocca, F. [IFN-CNR, Institute for Photonics and Nanotechnologies, Unit FBK-Photonics of Trento, 38123, Trento (Italy); Krishna, M. Ghanashyam [School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2013-02-05T23:59:59.000Z

33

Process for forming retrograde profiles in silicon  

DOE Patents (OSTI)

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Weiner, K.H.; Sigmon, T.W.

1996-10-15T23:59:59.000Z

34

Process for forming retrograde profiles in silicon  

DOE Patents (OSTI)

A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

1996-01-01T23:59:59.000Z

35

Fabrication of porous silicon membranes  

E-Print Network (OSTI)

. In step 1, the surface of silicon is covered with fluorine ions. In step 2, when an electric field is applied across the interface, holes move towards the surface. In step 3, some of the holes are trapped at the surface, and they weaken the silicon...-silicon bonds. In step 4, thermal energy swings away the Si-F groups exposing the holes. In step 5, fluorine ions occupy the holes and release their charges. In the dissolution, Step 3 through Step 5 is repeated, and SiFz is removed from the reacting site...

Yue, Wing Kong

2012-06-07T23:59:59.000Z

36

Concentrator silicon cell research  

SciTech Connect

This project continued the developments of high-efficiency silicon concentrator solar cells with the goal of achieving a cell efficiency in the 26 to 27 percent range at a concentration level of 150 suns of greater. The target efficiency was achieved with the new PERL (passivated emitter, rear locally diffused) cell structure, but only at low concentration levels around 20 suns. The PERL structure combines oxide passivation of both top and rear surfaces of the cells with small area contact to heavily doped regions on the top and rear surfaces. Efficiency in the 22 to 23 percent range was also demonstrated for large-area concentrator cells fabricated with the buried contact solar cell processing sequence, either when combined with prismatic covers or with other innovative approaches to reduce top contact shadowing. 19 refs.

Green, M.A.; Wenham, S.R.; Zhang, F.; Zhao, J.; Wang, A. [New South Wales Univ., Kensington (Australia). Solar Photovoltaic Lab.

1992-04-01T23:59:59.000Z

37

Silicone plesiotherapy molds  

SciTech Connect

Plesiotherapy, the treatment of superficial lesions by radioactive molds has largely been replaced by teletherapy techniques involving high energy photon and electron beams. There are, however, situations for which a short distance type treatment, in one form or another, is superior to any other presently available. Traditionally, molds have taken the form of rigid devices incorporating clamps to attach them to the patient. This ensures a reproducible geometry about a localized region since the molds are applied on a daily basis. To make such devices requires considerable skill and patience. This article describes an alternative method that eliminates the use of cumbersome devices in many situations. Silicone molds made from a plaster cast model have been found suitable for the treatment of surface lesions and especially for lesions in the oral and nasal cavities. With the use of radioactive gold seeds the molds may be left in place for a few days without fear of them moving.

Karolis, C.; Reay-Young, P.S.; Walsh, W.; Velautham, G.

1983-04-01T23:59:59.000Z

38

Rheology of silicon carbide/vinyl ester nanocomposites  

E-Print Network (OSTI)

New York, 1999. SILICON CARBIDE/VINYL ESTER NANOCOMPOSITESRheology of Silicon Carbide/Vinyl Ester NanocompositesABSTRACT: Silicon carbide (SiC) nanoparticles with no

Yong, Virginia; Hahn, H. Thomas

2006-01-01T23:59:59.000Z

39

Silicon Carbide, SiC  

Science Journals Connector (OSTI)

Silicon carbide occurring naturally as hexagonal crystals and associated with diamond, graphite, and amorphous carbon was first reported in 1904/05 by Moissan as a component of the hydrochloric acid insoluble ...

Vera Haase; Gerhard Kirschstein; Hildegard List; Sigrid Ruprecht

1985-01-01T23:59:59.000Z

40

Mechanical Dissipation in Silicon Flexures  

E-Print Network (OSTI)

The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92um thick single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to phi = 4.4E-7.

S. Reid; G. Cagnoli; D. R. M. Crooks; J. Hough; P. Murray; S. Rowan; M. M. Fejer; R. Route; S. Zappe

2005-10-28T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Direct Production of Silicones From Sand  

SciTech Connect

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30T23:59:59.000Z

42

BY SILICON CRYSTALS  

NLE Websites -- All DOE Office Websites (Extended Search)

c October 29, 1942 a 1 1 _MIGH aECTgFXCATIOH - BY SILICON CRYSTALS . . c .. I n. The excellent pesformmce of Brftieh "red dot" c r y s t a l s f e explained R R due t o the kgife edge contact i n a t A polfehod ~ X ' f l i C B o H i g h frequency m c t l f f c n t f o n 8ependre c r i t i c a l l y on the ape%e;y of the rectifytnc boundary layer o f the crystal, C, For hl#$ comvere~on e f f i c i e n c y , the product c d t h i ~ capacity m a o f ' t h e @forward" (bulk) re-. sistance Rb o f the crystnl must b@ sm%P, depende primarily on the breadth of tha b f f e edge i t s lbngth. The contact am &harefore ~ E L V Q a rather large area wMQh prevents burn-out, thh3 t h e breadth of &h@ knife edge should be bdt8~1 than E~$O$B% % f I - ' amo For a knife edge, this produet very 14ttle upom For a wavsIL~n+3tih of PO emo the eowp,o%a%8sne 4

43

Photovoltaic Silicon Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Silicon Cell Basics Silicon Cell Basics Photovoltaic Silicon Cell Basics August 20, 2013 - 2:19pm Addthis Silicon-used to make some the earliest photovoltaic (PV) devices-is still the most popular material for solar cells. Silicon is also the second-most abundant element in the Earth's crust (after oxygen). However, to be useful as a semiconductor material in solar cells, silicon must be refined to a purity of 99.9999%. In single-crystal silicon, the molecular structure-which is the arrangement of atoms in the material-is uniform because the entire structure is grown from the same crystal. This uniformity is ideal for transferring electrons efficiently through the material. To make an effective PV cell, however, silicon has to be "doped" with other elements to make n-type and p-type layers.

44

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Enabling Thin Silicon Solar Cell Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs; however, silicon is brittle, and thinner silicon, coupled with other recent trends in SPV technologies (thinner glass, lighter or no metal frames, increased use of certain polymers for encapsulation of the silicon cells), is more susceptible to stress and cracking. When the thin

45

Nucleation and solidification of silicon for photovoltaics  

E-Print Network (OSTI)

The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

Appapillai, Anjuli T. (Anjuli Tara)

2010-01-01T23:59:59.000Z

46

Becancour Silicon Inc BSI | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Name: Becancour Silicon Inc (BSI) Place: St. Laurent, Quebec, Canada Zip: H4M2M4 Sector: Solar Product: Canadian supplier of silicon metal for the...

47

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents (OSTI)

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

48

Silicon crystal growing by oscillating crucible technique  

DOE Patents (OSTI)

A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

Schwuttke, G.H.; Kim, K.M.; Smetana, P.

1983-08-03T23:59:59.000Z

49

System and method for liquid silicon containment  

DOE Patents (OSTI)

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28T23:59:59.000Z

50

System and method for liquid silicon containment  

SciTech Connect

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03T23:59:59.000Z

51

Copper doped polycrystalline silicon solar cell  

DOE Patents (OSTI)

Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

1981-01-01T23:59:59.000Z

52

Buckeye Silicon | Open Energy Information  

Open Energy Info (EERE)

Silicon Silicon Jump to: navigation, search Name Buckeye Silicon Address 2600 Dorr Street - Suite 1070 Place Toledo, Ohio Zip 43606 Sector Renewable Energy, Services, Solar Product Consulting; Manufacturing;Raw materials/extraction;Refining;Research and development Website http://www.sphereenergy.net Coordinates 41.6529122°, -83.6066466° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.6529122,"lon":-83.6066466,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

53

Prealloyed catalyst for growing silicon carbide whiskers  

DOE Patents (OSTI)

A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the .beta. form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.

Shalek, Peter D. (Los Alamos, NM); Katz, Joel D. (Niagara Falls, NY); Hurley, George F. (Los Alamos, NM)

1988-01-01T23:59:59.000Z

54

Silicon solar cells: state of the art  

Science Journals Connector (OSTI)

...Roberto Amendolia and Can Li Silicon solar cells: state of the art Martin A. Green...majority of photovoltaic (PV) solar cells produced to date have been based...this point are also explored. solar cells|silicon solar cells|silicon...

2013-01-01T23:59:59.000Z

55

Crystalline-Silicon/Organic Heterojunctions for Solar  

E-Print Network (OSTI)

-semiconductors is potentially cheaper, but the organic solar cells are not very efficient. In this thesis we explore if organic semiconductors can be integrated with silicon to form hybrid organic/silicon solar cells that are both efficient, a silicon/organic heterojunction solar cell with an open-circuit voltage of 0.59 V and power conversion

56

Laser wafering for silicon solar.  

SciTech Connect

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

57

Electronic properties of microcrystalline silicon  

SciTech Connect

The electronic and optical properties of microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition are investigated with Hall-effect, electrical conductivity, photothermal deflection spectroscopy and photoluminescence measurements. In particular, the influence of the grain size and the crystalline volume fraction on the conductivity, the carrier density and the Hall mobility is investigated in highly doped films. A percolation model is proposed to describe the observed transport data. Photoluminescence properties were studied in undoped films. It is proposed that the photoluminescence is due to recombination at structural defects similar to those observed in crystalline silicon.

Carius, R.; Finger, F.; Backhausen, U.; Luysberg, M.; Hapke, P.; Houben, L.; Otte, M.; Overhof, H.

1997-07-01T23:59:59.000Z

58

Silicon-based silicongermaniumtin heterostructure photonics  

Science Journals Connector (OSTI)

...Bordas, GC Roelkens, HPMM Ambrosius, P Thijs, F Karouta, and MK Smit. 2011 Photonic integration in indium-phosphide membranes...Sorger, VJ , ND Lanzilloti-Kimura, RM Ma, and X Zhang. 2012 Ultra-compact silicon nanophotonic modulator with broadband response...

2014-01-01T23:59:59.000Z

59

Method for processing silicon solar cells  

DOE Patents (OSTI)

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06T23:59:59.000Z

60

Method for fabricating silicon cells  

DOE Patents (OSTI)

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Optical absorption in amorphous silicon  

SciTech Connect

The role that disorder plays in shaping the form of the optical absorption spectrum of hydrogenated amorphous silicon is investigated. Disorder leads to a redistribution of states, which both reduces the Tauc gap and broadens the absorption tail. The observed relationship between the Tauc gap and the breadth of the absorption tail is thus explained.

O`Leary, S.K.; Zukotynski, S.; Perz, J.M.; Sidhu, L.S. [Univ. of Toronto, Ontario (Canada). Dept. of Electrical and Computer Engineering

1996-12-31T23:59:59.000Z

62

Microelectromechanical pump utilizing porous silicon  

DOE Patents (OSTI)

A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

Lantz, Jeffrey W. (Albuquerque, NM); Stalford, Harold L. (Norman, OK)

2011-07-19T23:59:59.000Z

63

Dispersion toughened silicon carbon ceramics  

DOE Patents (OSTI)

Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

Wei, G.C.

1984-01-01T23:59:59.000Z

64

Narrow band gap amorphous silicon semiconductors  

DOE Patents (OSTI)

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Madan, A.; Mahan, A.H.

1985-01-10T23:59:59.000Z

65

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

Science Journals Connector (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n+) and boron (p+) diffused surfaces decreases by factors of ?25 and ?10 respectively. Conversely the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm2 for n+ and ?100 m? cm2 for p+ surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer as supported by scanning transmission electron microscopyenergy dispersive x-ray maps. We explain the superior contact selectivity obtained on n+ surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

J. Bullock; A. Cuevas

2014-01-01T23:59:59.000Z

66

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

SciTech Connect

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopyenergy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [cole Polytechnique Fdrale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladire 71, CH-200 Neuchtel (Switzerland)

2014-04-28T23:59:59.000Z

67

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies  

DOE Patents (OSTI)

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Blewer, Robert S. (Albuquerque, NM); Gullinger, Terry R. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

68

Spectral Reflectance of Silicon Photodiodes  

E-Print Network (OSTI)

Introduction Silicon photodiodes are among the most popular photodetectors that combine high performance over a wide wavelength range with unparalleled ease of use. High-quality photodiodes, in the form of a trap detector, 1,2 have many significant applications in precision radiometry. Their predictable responsivity in visible and near-infrared ~NIR! wavelengths allows the realization of high-accuracy spectral responsivity scales. 3,4 The spectral responsivity scales can be utilized in, for example, realization of luminous intensity 5,6 and spectral irradiance scales. 7,8 The spectral responsivity of a silicon photodiode is determined by the reflectance of the diode surface r~l! and the internal quantum deficiency d~l!. The values of d~l! and r~l! can be extrapolated 4 by mathematical models. To extrapolate the val

Atte Haapalinna; Petri Krh; Erkki Ikonen

69

The Silicon Mine | Open Energy Information  

Open Energy Info (EERE)

Mine Mine Jump to: navigation, search Name The Silicon Mine Place Netherlands Sector Solar Product The Silicon Mine (TSM) will produce solar grade polysilicon suitable for the production of wafers or as the base material for the manufacture of solar cells. References The Silicon Mine[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. The Silicon Mine is a company located in Netherlands . References ↑ "The Silicon Mine" Retrieved from "http://en.openei.org/w/index.php?title=The_Silicon_Mine&oldid=352196" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties

70

Diamond-silicon carbide composite and method  

DOE Patents (OSTI)

Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

Zhao, Yusheng (Los Alamos, NM)

2011-06-14T23:59:59.000Z

71

Silicon Nanowires for Non-Volatile Memory  

E-Print Network (OSTI)

Silicon Nanowires for Non-Volatile Memory P R O J E C T L E A D E R : Curt A. Richter (NIST) C O L approaches for silicon nanowire non-volatile memory. K E Y A C C O M P L I S H M E N T S Fabricated novel non-volatile memory cells with silicon nanowire channels and Al2 O3 /HfO2 /SiO2 gate dielectric storage stacks

72

Microstructure and properties of IN SITU toughened silicon carbide  

E-Print Network (OSTI)

IN SITU TOUGHENED SILICON CARBIDE LUTGARD C. DE JONGHE 1,2 ,In Situ Toughened Silicon Carbide Lutgard C. De Jonghe 1,2 ,USA ABSTRACT A silicon carbide with a fracture toughness as

De Jonghe, Lutgard C.; Ritchie, Robert O.; Zhang, Xiao Feng

2003-01-01T23:59:59.000Z

73

Three-Dimensional Metal Scaffold Supported Bicontinuous Silicon Battery Anodes  

E-Print Network (OSTI)

Three-Dimensional Metal Scaffold Supported Bicontinuous Silicon Battery Anodes Huigang Zhang Supporting Information ABSTRACT: Silicon-based lithium ion battery anodes are attracting significant during cycling generally leads to anode pulverization unless the silicon is dispersed throughout a matrix

Braun, Paul

74

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

75

Combustion Synthesis of Silicon Carbide 389 Combustion Synthesis of Silicon Carbide  

E-Print Network (OSTI)

Combustion Synthesis of Silicon Carbide 389 X Combustion Synthesis of Silicon Carbide Alexander S velocity and 17 #12;Properties and Applications of Silicon Carbide390 reaction rate throughout the mixture by graphite during SHS of carbides. Local reaction initiation is typically accomplished by hot tungsten wire

Mukasyan, Alexander

76

Structural alloy with a protective coating containing silicon or silicon-oxide  

DOE Patents (OSTI)

An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

Natesan, K.

1994-12-27T23:59:59.000Z

77

Structural alloy with a protective coating containing silicon or silicon-oxide  

DOE Patents (OSTI)

This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

Natesan, K.

1992-01-01T23:59:59.000Z

78

Silicon Nanophotonics: The Optical Spice Rack  

Science Journals Connector (OSTI)

Silicon is evolving as a versatile photonic platform with multiple functionalities that can be seamlessly integrated. We have recently demonstrated the ability to guide and switch...

Lipson, Michal

79

Surface alloying of silicon into aluminum substrate.  

SciTech Connect

Aluminum alloys that are easily castable tend to have lower silicon content and hence lower wear resistance. The use of laser surface alloying to improve the surface wear resistance of 319 and 320 aluminum alloys was examined. A silicon layer was painted onto the surface to be treated. A high power pulsed Nd:YAG laser with fiberoptic beam delivery was used to carry out the laser surface treatment to enhance the silicon content. Process parameters were varied to minimize the surface roughness from overlap of the laser beam treatment. The surface-alloyed layer was characterized and the silicon content was determined.

Xu, Z.

1998-10-28T23:59:59.000Z

80

Synthesis and characterization of silicon phthalocyanines bearing...  

NLE Websites -- All DOE Office Websites (Extended Search)

Synthesis and characterization of silicon phthalocyanines bearing axial phenoxyl groups for attachment to semiconducting metal oxides Authors: Bergkamp, J. J., Sherman, B. D.,...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Silicon-Graphene Anodes | Argonne National Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon-Graphene Anodes Technology available for licensing: Provides low-cost production process. Advanced gas phase deposition process yields anodes with five times the specific...

82

Silicon Photonics for Modulation, Switching, and Tuning  

Science Journals Connector (OSTI)

Thermal and electro-refractive silicon photonic modulators, switches, and tunable filters have been demonstrated with ultralow switching energies and high-speed operation. These...

Watts, Michael

83

Innovation and Social Capital in Silicon Valley  

E-Print Network (OSTI)

Innovation and Social Capital in Silicon Valley * BRIEpath from social capital to innovation has been identified.social capital has for economic development and innovation.

Kenney, Martin; Patton, Donald

2003-01-01T23:59:59.000Z

84

Silicon Materials and Devices (Fact Sheet)  

SciTech Connect

This National Center for Photovoltaics sheet describes the capabilities of its silicon materials and devices research. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

85

Silicon Materials and Devices (Fact Sheet)  

SciTech Connect

Capabilities fact sheet for the National Center for Photovoltaics: Silicon Materials and Devices that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

86

Hybrid Silicon NanoconePolymer Solar Cells  

Science Journals Connector (OSTI)

Hybrid Silicon NanoconePolymer Solar Cells ... In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. ...

Sangmoo Jeong; Erik C. Garnett; Shuang Wang; Zongfu Yu; Shanhui Fan; Mark L. Brongersma; Michael D. McGehee; Yi Cui

2012-04-30T23:59:59.000Z

87

Apparatus for obtaining silicon from fluosilicic acid  

DOE Patents (OSTI)

Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

Sanjurjo, Angel (San Jose, CA)

1986-05-20T23:59:59.000Z

88

Engineering Metal Impurities in Multicrystalline Silicon Solar...  

NLE Websites -- All DOE Office Websites (Extended Search)

from inexpensive low-grade silicon. Artist's impression of an intense beam of synchrotron light striking a solar cell and the resulting fluorescence image of the distribution of...

89

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

cracking problem in silicon cell technology," says Budiman. "The ALS provides us with a light that allows us to measure and characterize molecular stress in a very quantitative...

90

Silicon Nanostructure-based Technology for Next Generation Energy...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Silicon Nanostructure-based Technology for Next Generation Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2013 DOE Hydrogen and Fuel Cells...

91

Vehicle Technologies Office Merit Review 2014: Silicon Nanowire...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Technologies Office Merit Review 2014: Silicon Nanowire Anodes for Next Generation Energy Storage Vehicle Technologies Office Merit Review 2014: Silicon Nanowire Anodes for...

92

Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Office Merit Review 2012: Silicon Nanostructure-based Technology for Next Generation Energy Storage Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure-based...

93

Atomistic modeling of amorphous silicon carbide using a bond...  

NLE Websites -- All DOE Office Websites (Extended Search)

modeling of amorphous silicon carbide using a bond-order potential. Atomistic modeling of amorphous silicon carbide using a bond-order potential. Abstract: Molecular dynamics...

94

Fact Sheet: Award-Winning Silicon Carbide Power Electronics ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Award-Winning Silicon Carbide Power Electronics (October 2012) Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012) Operating at high temperatures and with...

95

Amorphization of Silicon Carbide by Carbon Displacement. | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

of Silicon Carbide by Carbon Displacement. Amorphization of Silicon Carbide by Carbon Displacement. Abstract: We have used molecular dynamics simulations to examine the possibility...

96

Irradiation-induced defect clustering and amorphization in silicon...  

NLE Websites -- All DOE Office Websites (Extended Search)

Irradiation-induced defect clustering and amorphization in silicon carbide. Irradiation-induced defect clustering and amorphization in silicon carbide. Abstract: Previous computer...

97

Silicon Nanoparticle Synthesis and Modeling for Thin Film Solar Cells.  

E-Print Network (OSTI)

??Nanometer-scale silicon shows extraordinary electronic and optical properties that are not available for bulk silicon, and many investigations toward applications in optoelectronic devices are being (more)

Albu, Zahra

2014-01-01T23:59:59.000Z

98

Studying The Kinetics Of Crystalline Silicon Nanoparticle Lithiation...  

NLE Websites -- All DOE Office Websites (Extended Search)

Studying The Kinetics Of Crystalline Silicon Nanoparticle Lithiation With In-Situ Transmission Electron Microscopy. Studying The Kinetics Of Crystalline Silicon Nanoparticle...

99

athermal silicon microring: Topics by E-print Network  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Websites Summary: . If it is applied in direct contact to silicon, this intrinsic tensile stress can result in a high mechanical stress in the underlying silicon...

100

Hydrogen Bubbles and Formation of Nanoporous Silicon during Electroche...  

NLE Websites -- All DOE Office Websites (Extended Search)

Bubbles and Formation of Nanoporous Silicon during Electrochemical Etching. Hydrogen Bubbles and Formation of Nanoporous Silicon during Electrochemical Etching. Abstract: Many...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Conductive Rigid Skeleton Supported Silicon as High-Performance...  

NLE Websites -- All DOE Office Websites (Extended Search)

Conductive Rigid Skeleton Supported Silicon as High-Performance Li-Ion Battery Anodes. Conductive Rigid Skeleton Supported Silicon as High-Performance Li-Ion Battery Anodes....

102

Nanostructured silicon thin films deposited by PECVD in the presence of silicon nanoparticles  

SciTech Connect

Nanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1--2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

Viera, G.; Cabarrocas, P.R.; Hamma, S.; Sharma, S.N.; Costa, J.; Bertran, E.

1997-07-01T23:59:59.000Z

103

Ultralow-Power Silicon Microphotonic Communications Platform  

NLE Websites -- All DOE Office Websites (Extended Search)

Ultralow-Power Silicon Ultralow-Power Silicon Microphotonic Communications Platform 1 R&D 100 Entry Ultralow-Power Silicon Microphotonic Communications Platform 2 R&D 100 Entry Submitting Organization Sandia National Laboratories P. O. Box 5800 Albuquerque New Mexico 87185-1082 USA Michael R. Watts Phone: (505) 284-9616 Fax: (505) 284-7690 mwatts@sandia.gov AFFIRMATION: I affirm that all information submitted as a part of, or supplemental to, this entry is a fair and accurate representation of this product. _____________________________ Michael R. Watts Joint Entry Not applicable Product Name Ultralow-Power Silicon Microphotonic Communications Platform Brief Description We have developed an ultralow-power, high-bandwidth silicon microphotonic communications platform that addresses the bandwidth and power consumption

104

Fabricating solar cells with silicon nanoparticles  

DOE Patents (OSTI)

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02T23:59:59.000Z

105

Magnetoplasticity and diffusion in silicon single crystals  

SciTech Connect

The effect of static magnetic fields on the dynamics of surface dislocation segments, as well as the diffusion mobility of a dopant in silicon single crystals, has been analyzed. It has been experimentally found that the preliminary treatment of p-type silicon plates (the dopant is boron with a concentration of 10{sup 16} cm{sup -3}) in the static magnetic field (B = 1 T, a treatment time of 30 min) leads to an increase in the mobility of surface dislocation segments. The characteristic times of observed changes (about 80 h) and the threshold dopant concentration (10{sub 15} cm{sup -3}) below which the magneto-optical effect in silicon is not fixed have been determined. It has been found that diffusion processes in dislocation-free silicon are magnetically sensitive: the phosphorus diffusion depth in p-type silicon that is preliminarily aged in the static magnetic field increases (by approximately 20%) compared to the reference samples.

Skvortsov, A. A., E-mail: SkvortsovAA2009@yandex.ru; Karizin, A. V. [Moscow State Technical University 'MAMI' (Russian Federation)

2012-01-15T23:59:59.000Z

106

Sampling artifacts from conductive silicone tubing  

NLE Websites -- All DOE Office Websites (Extended Search)

Sampling artifacts from conductive silicone tubing Sampling artifacts from conductive silicone tubing Title Sampling artifacts from conductive silicone tubing Publication Type Journal Article Year of Publication 2009 Authors Timko, Michael T., Zhenhong Yu, Jesse Kroll, John T. Jayne, Douglas R. Worsnop, Richard C. Miake-Lye, Timothy B. Onasch, David Liscinsky, Thomas W. Kirchstetter, Hugo Destaillats, Amara L. Holder, Jared D. Smith, and Kevin R. Wilson Journal Aerosol Science and Technology Volume 43 Issue 9 Pagination 855-865 Date Published 06/03/2009 Abstract We report evidence that carbon impregnated conductive silicone tubing used in aerosol sampling systems can introduce two types of experimental artifacts: (1) silicon tubing dynamically absorbs carbon dioxide gas, requiring greater than 5 minutes to reach equilibrium and (2) silicone tubing emits organic contaminants containing siloxane that are adsorbed onto particles traveling through it and onto downstream quartz fiber filters. The consequence can be substantial for engine exhaust measurements as both artifacts directly impact calculations of particulate mass-based emission indices. The emission of contaminants from the silicone tubing can result in overestimation of organic particle mass concentrations based on real-time aerosol mass spectrometry and the off-line thermal analysis of quartz filters. The adsorption of siloxane contaminants can affect the surface properties of aerosol particles; we observed a marked reduction in the water-affinity of soot particles passed through conductive silicone tubing. These combined observations suggest that the silicone tubing artifacts may have wide consequence for the aerosol community and the tubing should, therefore, be used with caution. Contamination associated with the use of silicone tubing was observed at ambient temperature and, in some cases, was enhanced by mild heating (<70°C) or pre-exposure to a solvent (methanol). Further evaluation is warranted to quantify systematically how the contamination responds to variations in system temperature, physicochemical particle properties, exposure to solvent, sample contact time, tubing age, and sample flow rates.

107

Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix  

SciTech Connect

A moderately low temperature (?800 C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (?c-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the ?c-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 C to 800 C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

Kole, Arindam; Chaudhuri, Partha, E-mail: erpc@iacs.res.in [Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata-700032 (India)

2014-10-15T23:59:59.000Z

108

Fundamnetal chemistry of silicon CVD  

Science Journals Connector (OSTI)

Model CVD reactor studies and UHV surface adsorption kinetic measurements are a powerful combination for investigation of the chemical mechanisms active in thermal silicon CVD from silane. We use the model reactor to separate two regimes of pressure and temperature in which SiH4 heterogeneous decomposition or homogeneous pyrolysis chemistry dominate the observed silicon film growth kinetics. Residence time of SiH4 in the reactor hot zone and total pressure are essential quantities distinguishing the two regimes. Growth rates are controlled by surface SiH4 adsorption kinetics in the heterogeneous regime. The regime we call the homogeneous regime is dominated by adsorption kinetics of higher silanes SinH2n+2. UHV adsorption kinetic measurements comparing SiH4 Si2H6 and Si3H8 chemisorption on clean well defined single crystal surfaces are useful in understanding the two regimes. The UHV studies also demonstrate the necessity of considering the competitive adsorption of SiH4 with the higher silanes in film growth rate measurements because of homogenous reactions forming higher silanes from SiH4 under certain reactor conditions and because of trace disilane impurities commonly present in commercially available SiH4.

S. M. Gates; B. A. Scott; R. D. Estes

1988-01-01T23:59:59.000Z

109

Surface Modification of Silicone Elastomer Using Perfluorinated Ether  

E-Print Network (OSTI)

of a silicone-coated substrate.29 In addition, higher molecular weight perfluoropolyethers have been included

Chaudhury, Manoj K.

110

Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices  

E-Print Network (OSTI)

Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices A thesis presented Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices Eric Mazur James E. Carey III silicon and reports on its first application in optoelectronic devices. Irradia- tion of a silicon surface

Mazur, Eric

111

Process for forming silicon carbide films and microcomponents  

DOE Patents (OSTI)

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

1999-01-01T23:59:59.000Z

112

Process for forming silicon carbide films and microcomponents  

DOE Patents (OSTI)

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19T23:59:59.000Z

113

Process for producing amorphous and crystalline silicon nitride  

DOE Patents (OSTI)

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

Morgan, Peter E. D. (Thousand Oaks, CA); Pugar, Eloise A. (Newbury Park, CA)

1985-01-01T23:59:59.000Z

114

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p-layer structure  

E-Print Network (OSTI)

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide Received 30 October 2003; accepted 18 November 2003 We investigated a double silicon-carbide p-layer structure consisting of a undiluted p-type amorphous silicon-carbide (p-a-SiC:H) window layer and a hydrogen

Kim, Yong Jung

115

Manufacture of silicon carbide using solar energy  

DOE Patents (OSTI)

A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1992-01-01T23:59:59.000Z

116

Cooling of hot electrons in amorphous silicon  

SciTech Connect

Measurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.

Vanderhaghen, R.; Hulin, D.; Cuzeau, S.; White, J.O.

1997-07-01T23:59:59.000Z

117

Holey Silicon as an Efficient Thermoelectric Material  

SciTech Connect

This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These ?holey silicon? (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35percent porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit. With a ZT value of 0.4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system.

Tang, Jinyao; Wang, Hung-Ta; Hyun Lee, Dong; Fardy, Melissa; Huo, Ziyang; Russell, Thomas P.; Yang, Peidong

2010-09-30T23:59:59.000Z

118

Field emission study of cobalt ion implanted porous silicon  

E-Print Network (OSTI)

Analysis . Field Emission Measurements of Cobalt Implanted Porous Silicon Differences between the 1mplanted Porous Silicon Field Emission Devioe and the Al-anode Oxidized Porous Silicon Field Emission Diode VII CONCLUSION 70 94 99 REFERENCES... Emission Diode (OPSFED) was developed and studied [8] . The OPSFED was using the irregularity on the interface between the oxidized porous silicon film and silicon substrate as field emission cathodes, and a thin aluminum layer deposited...

Liu, Hongbiao

2012-06-07T23:59:59.000Z

119

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

120

20% efficiency silicon solar cells  

Science Journals Connector (OSTI)

Further improvements in crystalline silicon solar cell performance have been obtained by combining the high levels of surface recombination control demonstrated in earlier passivated emitter solar cells with an improved optical approach. This approach involves the use of microgrooved surfaces which retain the advantages of pyramidally textured surfaces while avoiding some disadvantages of the latter. The approach results in a 56% improvement in cell short?circuit current density for cells fabricated on 0.1 and 0.2 ??cm (?p type) substrates. This results in an energy conversion efficiency for these devices above 20% under standard terrestrial test conditions (AM1.5 100 mW/cm2) for the first time.

A. W. Blakers; M. A. Green

1986-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

E-Print Network 3.0 - amorphous silicon research Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Silicon is the second most... distinct forms. The possibility of a phase transition between two liquid forms in silicon, ... Source: Goldberg, Bennett - Department of...

122

E-Print Network 3.0 - amorphous silicon carbon Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

is changing from a cross-linked diamond-like carbon material to an amorphous silicon carbide material... with silicon. 1. Introduction Amorphous hydrogenated silicon carbide...

123

E-Print Network 3.0 - aastaks silicon valleysse Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Finding the Fundamentals of Silicon for Advanced... . Microelectronic chips use bulk-silicon wafers to power computers, and silicon is used for increasingly important......

124

A NEW A15 MULTIFILAMENTARY SUPERCONDUCTOR BASED ON THE NIOBIUM-ALUMINUM-SILICON SYSTEM  

E-Print Network (OSTI)

BASED ON THE NIOBIUM-ALUMINUM-SILICON SYSTEM Gary C. Quinnpsi. Photomicrograph of an Aluminum-Silicon eutectic filledmultifilimentary niobium-aluminum-silicon wire, a) sample #

Quinn, G.C.

2011-01-01T23:59:59.000Z

125

Electronic properties and reliability of the silicon dioxide / silicon carbide interface.  

E-Print Network (OSTI)

??Silicon carbide has been preferred over other wide band-gap semiconductors for high power applications because of its unique ability to grow a thermal oxide, challenges (more)

Rozen, John

2008-01-01T23:59:59.000Z

126

Silicon nano grid waveguide for coupling between multimode fiber (MMF) and silicon nano waveguide  

Science Journals Connector (OSTI)

We present a new silicon waveguide configuration which enables a mode field expansion more than several tens of micrometers. It maintains singlemode operation condition and gradient...

An, Shinmo; Lee, El-Hang

127

Cheaper Silicon Found Effective for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Cheaper Silicon Found Effective for Solar Cells Cheaper Silicon Found Effective for Solar Cells A research team from the University of California at Berkeley, Lawrence Berkeley National Laboratory, Argonne National Laboratory, and Pacific Northwest National Laboratory, using U.S. Department of Energy (DOE) synchrotron light sources, has successfully shown that inexpensive silicon has the potential to be used for photovoltaic (PV) devices, commonly known as solar cells. In a new approach-whose findings were published online in Nature Materials (August 14, 2005)-the researchers used nanodefect engineering to control transition metal contamination in order to produce impurity-rich, performance-enhanced multicrystalline silicon (mc-Si) material. "Solar energy is often touted as the most promising and secure energy

128

Longwei Silicon Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Longwei Silicon Co Ltd Longwei Silicon Co Ltd Jump to: navigation, search Name Longwei Silicon Co Ltd Place Liancheng, Fujian Province, China Sector Solar Product A Chinese sillicon metal producer who also produce 4N-6N silicon for solar use. Coordinates 21.61801°, 110.282799° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":21.61801,"lon":110.282799,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

129

RSI Silicon Products LLC | Open Energy Information  

Open Energy Info (EERE)

RSI Silicon Products LLC RSI Silicon Products LLC Jump to: navigation, search Name RSI Silicon Products LLC Place Easton, Massachusetts Zip 18040 Sector Solar Product Early-stage startup which is developing a process for solar-grade silicon manufacture at low energy intensity, spinoff from MIT. Coordinates 47.237806°, -121.179542° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.237806,"lon":-121.179542,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

130

SUPPORTING INFORMATION Multicolored vertical silicon nanowires  

E-Print Network (OSTI)

. The nanowires have radii of about 50 nm and are 1 µm long. Light from a Xe arc lamp was focused into an optical on the single crystalline silicon wafer. Inductively coupled plasma- reactive ion etch (STS) was used

131

Transient analysis of silicon carbide power MOSFET.  

E-Print Network (OSTI)

??This thesis illustrates the transient performance of Silicon carbide (4H-SiC) Power MOSFET. Transient analysis enables the designer to understand the thermal stress the semiconductor device (more)

Pushpakaran, Bejoy

2012-01-01T23:59:59.000Z

132

Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices  

E-Print Network (OSTI)

film is deposited over the window. . . . . . . . . . . . . . . . . . . . . . . . .A carbon film is deposited over the window. Figure 4.11:films and the silicon is unknown. However, changes in geometry such as varying the window

Schriver, Maria Christine

2012-01-01T23:59:59.000Z

133

Silver transport in CVD silicon carbide  

E-Print Network (OSTI)

Ion implantation and diffusion couple experiments were used to study silver transport through and release from CVD silicon carbide. Results of these experiments show that silver does not migrate via classical diffusion in ...

MacLean, Heather J. (Heather Jean), 1974-

2004-01-01T23:59:59.000Z

134

SAVE THE DATE!!! The Silicon Valley  

E-Print Network (OSTI)

SAVE THE DATE!!! The Silicon Valley 3rd Annual Social Innovation Leadership Forum 2014 (SILF 2014 towards a better tomorrow... Register for the event today! The Social Innovation Leadership Forum (SILF

Su, Xiao

135

Sandia Silicon Fabrication Recapitalization project underway...  

National Nuclear Security Administration (NNSA)

research and development at the Silicon Fab (SiFab), specifically for the W88 ALT 380 and B61-12 LEP. The ASML Scanner is a piece of photolithography equipment which is the main...

136

Silicon nitride having a high tensile strength  

DOE Patents (OSTI)

A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

1998-06-02T23:59:59.000Z

137

Fiber to waveguide couplers for silicon photonics  

E-Print Network (OSTI)

As silicon photonics enters mainstream technology, we find ourselves in need of methods to seamlessly transfer light between the optical fibers of global scale telecommunications networks and the on-chip waveguides used ...

Montalbo, Trisha M., 1980-

2004-01-01T23:59:59.000Z

138

Crystalline Silicon Photovoltaics Research | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

87% of world PV cell market sales in 2011. Crystalline silicon PV cells have laboratory energy conversion efficiencies as high as 25% for single-crystal cells and 20.4% for...

139

Device integration for silicon microphotonic platforms  

E-Print Network (OSTI)

Silicon ULSI compatible, high index contrast waveguides and devices provide high density integration for optical networking and on-chip optical interconnects. Four such waveguide systems were fabricated and analyzed: ...

Lim, Desmond Rodney

2000-01-01T23:59:59.000Z

140

Nano-Optoelectronic Integration on Silicon  

E-Print Network (OSTI)

Crystal Si Nanopillars, Nano Lett. , vol. 10, no. 11, pp.?V Nanowires on Silicon, Nano Letters, vol. 4, no. 10, pp.and nanoribbon lasers, Nano Letters, vol. 4, no. 2, pp.

Chen, Roger

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

High index contrast platform for silicon photonics  

E-Print Network (OSTI)

This thesis focuses on silicon-based high index contrast (HIC) photonics. In addition to mature fiber optics or low index contrast (LIC) platform, which is often referred to as Planar Lightwave Cirrcuit (PLC) or Silica ...

Akiyama, Shoji, 1972-

2004-01-01T23:59:59.000Z

142

Silicon Photonic Wire Waveguides: Fundamentals and Applications  

Science Journals Connector (OSTI)

This chapter reviews the fundamental characteristics and basic applications of the silicon ... provides us with a highly integrated platform for electronicphotonic convergence. For the practical achievement of ....

Koji Yamada

2011-01-01T23:59:59.000Z

143

6N Silicon Inc | Open Energy Information  

Open Energy Info (EERE)

Silicon Inc Silicon Inc Jump to: navigation, search Name 6N Silicon Inc Place Mississauga, Ontario, Canada Zip L5T 1E6 Sector Solar Product Canadian manufactuer of upgraded metallurgical silicon for solar industry. Coordinates 43.588285°, -79.643724° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.588285,"lon":-79.643724,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

144

Silicon Micromachines for Science and Technology  

SciTech Connect

The era of silicon micromechanics is upon us. In areas as diverse as telecommunications, automotive, aerospace, chemistry, entertainment and basic science, the ability to build microscopic machines from silicon is having a revolutionary impact. In my talk, I will discuss what micromachines are, how they are built and show examples of how they will have a revolutionary impact in many areas of science as well as technology.

David Bishop

2009-05-08T23:59:59.000Z

145

Scattering Anisotropies in n-Type Silicon  

Science Journals Connector (OSTI)

Measurements have been made of magnetoresistance effects in several relatively pure samples of n-type silicon for the purpose of obtaining information on scattering anisotropies. The results indicate that the ratios of relaxation times parallel and perpendicular to a constant-energy-spheroid axis in the six-valley conduction band of silicon are ?II???23 for acoustic-mode intravalley lattice scattering and ?II??>1 for ionized-impurity scattering. Intervalley lattice scattering, important at higher temperatures, is isotropic.

Donald Long and John Myers

1960-10-01T23:59:59.000Z

146

Silicon Absolute X-Ray Detectors  

SciTech Connect

The responsivity of silicon photodiodes having no loss in the entrance window, measured using synchrotron radiation in the 1.75 to 60 keV range, was compared to the responsivity calculated using the silicon thickness measured using near-infrared light. The measured and calculated responsivities agree with an average difference of 1.3%. This enables their use as absolute x-ray detectors.

Seely, John F. [Naval Research Laboratory, Washington, D.C. 20375 (United States); Korde, Raj; Sprunck, Jacob [International Radiation Detectors, Inc., Torrance, CA 90505-5243 (United States); Medjoubi, Kadda; Hustache, Stephanie [Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette CEDEX (France)

2010-06-23T23:59:59.000Z

147

Stochastic modelling of silicon nanoparticle synthesis  

E-Print Network (OSTI)

distributionPart 1: Experimental investigations, pp. 998 1007, Copyright (2010), with permission from Elsevier. by thermal, laser or microwave radiation sources [22, 72, 103]. The decom- position of silane forms reactive silicon hydrides, which combine... into applications of silicon nanoparticles in photovoltaics has been conducted. As the quantum confinement effects of a particle are strongly dependent on its size and structure, it may be possible to tune a photovoltaic cell to better match solar emission than...

Menz, William Jefferson

2014-01-07T23:59:59.000Z

148

Sampling Artifacts from Conductive Silicone Tubing  

SciTech Connect

We report evidence that carbon impregnated conductive silicone tubing used in aerosol sampling systems can introduce two types of experimental artifacts: 1) silicon tubing dynamically absorbs carbon dioxide gas, requiring greater than 5 minutes to reach equilibrium and 2) silicone tubing emits organic contaminants containing siloxane that adsorb onto particles traveling through it and onto downstream quartz fiber filters. The consequence can be substantial for engine exhaust measurements as both artifacts directly impact calculations of particulate mass-based emission indices. The emission of contaminants from the silicone tubing can result in overestimation of organic particle mass concentrations based on real-time aerosol mass spectrometry and the off-line thermal analysis of quartz filters. The adsorption of siloxane contaminants can affect the surface properties of aerosol particles; we observed a marked reduction in the water-affinity of soot particles passed through conductive silicone tubing. These combined observations suggest that the silicone tubing artifacts may have wide consequence for the aerosol community and should, therefore, be used with caution. Gentle heating, physical and chemical properties of the particle carriers, exposure to solvents, and tubing age may influence siloxane uptake. The amount of contamination is expected to increase as the tubing surface area increases and as the particle surface area increases. The effect is observed at ambient temperature and enhanced by mild heating (<100 oC). Further evaluation is warranted.

Timko, Michael T.; Yu, Zhenhong; Kroll, Jesse; Jayne, John T.; Worsnop, Douglas R.; Miake-Lye, Richard C.; Onasch, Timothy B.; Liscinsky, David; Kirchstetter, Thomas W.; Destaillats, Hugo; Holder, Amara L.; Smith, Jared D.; Wilson, Kevin R.

2009-05-15T23:59:59.000Z

149

Purification and deposition of silicon by an iodide disproportionation reaction  

DOE Patents (OSTI)

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Wang, Tihu (Littleton, CO); Ciszek, Theodore F. (Evergreen, CO)

2002-01-01T23:59:59.000Z

150

Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics  

DOE Patents (OSTI)

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Stoddard, Nathan G

2014-01-14T23:59:59.000Z

151

Light-emitting nanocrystalline silicon by low-pressure chemical-vapor deposition of disilane  

Science Journals Connector (OSTI)

Porous silicon is an attractive material for silicon optoelectronics. The great advantage of porous silicon lies on the simple way of production which makes silicon nanostructures easily available. After sever...

C. Manfredotti; F. Fizzotti; G. Amato

1996-10-01T23:59:59.000Z

152

Simultaneous STM and UHV electron microscope observation of silicon nanowires extracted from Si(111) surface  

Science Journals Connector (OSTI)

......research-article Articles Simultaneous STM and UHV electron microscope observation of silicon...silicon|tungsten| Simultaneous STM and UHV electron microscope observation of silicon...Semiconductor Special Issue Simultaneous STM and UHV electron microscope observation of silicon......

Y. Naitoh; K. Takayanagi; Y. Oshima; H. Hirayama

2000-01-01T23:59:59.000Z

153

Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates  

DOE Patents (OSTI)

The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

Branagan, Daniel J. (Idaho Falls, ID); Hyde, Timothy A. (Idaho Falls, ID); Fincke, James R. (Los Alamos, NM)

2008-03-11T23:59:59.000Z

154

Cryogenic silicon surface ion trap  

E-Print Network (OSTI)

Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\\dot{\\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $\\mu$m. These results open many new avenues to arrays of micro-fabricated ion traps.

Michael Niedermayr; Kirill Lakhmanskiy; Muir Kumph; Stefan Partel; Johannes Edlinger; Michael Brownnutt; Rainer Blatt

2014-03-20T23:59:59.000Z

155

Amorphous silicon detectors in positron emission tomography  

SciTech Connect

The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

1989-12-01T23:59:59.000Z

156

Photovoltaic Crystalline Silicon Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Crystalline Silicon Cell Basics Crystalline Silicon Cell Basics Photovoltaic Crystalline Silicon Cell Basics August 20, 2013 - 2:00pm Addthis To separate electrical charges, crystalline silicon cells must have a built-in electric field. Light shining on crystalline silicon may free electrons within the crystal lattice, but for these electrons to do useful work-such as provide electricity to a light bulb-they must be separated and directed into an electrical circuit. PV Semiconductors To create an electric field within a crystalline silicon photovoltaic (PV) cell, two silicon semiconductor layers are sandwiched together. P-type (or positive) semiconductors have an abundance of positively charged holes, and n-type (or negative) semiconductors have an abundance of negatively charged electrons. When n- and p-type silicon layers contact, excess electrons move

157

MICROMACHINED FOURIER TRANSFORM SPECTROMETER ON SILICON OPTICAL BENCH PLATFORM  

E-Print Network (OSTI)

MICROMACHINED FOURIER TRANSFORM SPECTROMETER ON SILICON OPTICAL BENCH PLATFORM Kyoungsik Yu1 a miniaturized Fourier transform spectrometer implemented on a silicon optical bench platform. The optical is becoming increasingly important in a number of applications such as environmental monitoring, chemical

Park, Namkyoo

158

Surface roughening in ion implanted 4H-silicon carbide  

Science Journals Connector (OSTI)

Silicon carbide (SiC) devices have the potential to yield new components with functional capabilities that far exceed components based on silicon devices. Selective doping of SiC by ion implantation is an importa...

M. A. Capano; S. Ryu; J. A. Cooper Jr.; M. R. Melloch

1999-01-01T23:59:59.000Z

159

Silicon Carbide Power Semiconductor Devices in the Cleanroom...  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Carbide Power Semiconductor Devices in the Cleanroom Silicon Carbide Power Semiconductor Devices in the Cleanroom Ron Olson 2012.10.04 I would like to introduce Zach Stum,...

160

Making Silicon Carbide Devices in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Carbide Devices in the Cleanroom Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Silicon Carbides in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Clean Room: Silicon Carbides GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-resear...

162

Temperature Dependent Pspice Model of Silicon Carbide Power MOSFET  

E-Print Network (OSTI)

Temperature Dependent Pspice Model of Silicon Carbide Power MOSFET Yutian Cui1 Madhu Chinthavali2-- This paper provides a behavioral model in Pspice for a silicon carbide (SiC) power MOSFET rated at 1200 V

Tolbert, Leon M.

163

The Sustainable Global Energy Economy: Hydrogen or Silicon?  

Science Journals Connector (OSTI)

A sustainable global silicon energy economy is proposed as a potential alternative to the hydrogen economy. This first visualization of a silicon energy economy is based on large-scale and carbon- ... uncertainti...

W. Earl Bardsley

2008-12-01T23:59:59.000Z

164

California: TetraCell Silicon Solar Cell Improves Efficiency...  

Energy Savers (EERE)

California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award August 16, 2013 -...

165

Flaw-limited transport in germanium-on-silicon photodiodes  

E-Print Network (OSTI)

Epitaxial germanium growth on silicon substrates has enabled a new class of photodiodes that can be integrated with traditional silicon electronics. Previous workers using lowthroughput growth techniques have demonstrated ...

Orcutt, Jason S. (Jason Scott)

2008-01-01T23:59:59.000Z

166

Muon States in Polycrystalline and Amorphous Silicon [and Discussion  

Science Journals Connector (OSTI)

15 February 1995 research-article Muon States in Polycrystalline and Amorphous Silicon [and Discussion] E. A. Davis A. Singh S. F. J. Cox A. M. Stoneham M. Symons Muons implanted into polycrystalline and amorphous silicon have been...

1995-01-01T23:59:59.000Z

167

Parylene Coated Silicon Probes for Neural Prosthesis Ray Huang1*  

E-Print Network (OSTI)

breakage. However, manufacturing limitations have prevented a strong and biocompatible silicon electrode as well as the in vitro electrical characterization of the gold and platinum micro electrodes. Keywords - parylene cable; neural prosthesis; silicon probe I. INTRODUCTION An important

Andersen, Richard

168

A Transporter Regulating Silicon Distribution in Rice Shoots  

Science Journals Connector (OSTI)

...and thus increases the resistance of plants to various...electron microscopy and Si elementary analysis of the leaf...Silicon and plant disease resistance against pathogenic fungi...silicon in enhancing the resistance of plants to biotic...

Naoki Yamaji; Namiki Mitatni; Jian Feng Ma

2008-05-30T23:59:59.000Z

169

Deposition method for producing silicon carbide high-temperature semiconductors  

DOE Patents (OSTI)

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

1987-01-01T23:59:59.000Z

170

UNIVERSITY of CALIFORNIA A SPICE STUDY OF SILICON SENSOR  

E-Print Network (OSTI)

.1 Motivation 1.2 Background 1.2.1 Silicon Sensor Strips 1.2.2 An Explanation of the Long-Ladder Detector 1, and the results of that study are the primary focus of this paper. 1.2 Background 1.2.1 Silicon Sensors SiliconTaylor 1 UNIVERSITY of CALIFORNIA SANTA CRUZ A SPICE STUDY OF SILICON SENSOR STRIP NOISE ON LONG

Belanger, David P.

171

Silicon Border Development LLC | Open Energy Information  

Open Energy Info (EERE)

Silicon Border Development LLC Silicon Border Development LLC Jump to: navigation, search Name Silicon Border Development LLC Place Poway, California Zip 92064 Sector Solar Product US-based developer of industrial parks with a focus on high-technology industry such as semiconductors and solar. Coordinates 32.95459°, -117.041984° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.95459,"lon":-117.041984,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

172

Korea Silicon Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Silicon Co Ltd Silicon Co Ltd Jump to: navigation, search Name Korea Silicon Co Ltd Place Seongnam, Gyeonggi-do, Korea (Republic) Sector Solar Product Korean manufacturer planning to output polysilicon, ingots and wafers for the solar industry. Coordinates 37.397652°, 127.115189° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.397652,"lon":127.115189,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

173

Amorphous and microcrystalline silicon technology -- 1998  

SciTech Connect

Although this new volume from MRS is the 16th in a long-standing and successful series, the focus is no longer limited to hydrogenated amorphous silicon (a-Si:H). The distinction between short- and medium-range order, and between homogeneous and heterogeneous semiconductor materials, is indeed too difficult to maintain. Instead, the volume covers amorphous and microcrystalline silicon from materials physics to new applications. Papers from a joint session with a symposium on ``Flat-Panel Display Materials and Large-Area Processes`` are included. The volume also features special focused sessions on heterogeneous materials, color sensors and radiation imaging, and parameter extraction and device modeling. Topics include: amorphous and polycrystalline thin-film transistors; solar cells; color and X-ray sensors, novel devices, luminescence and sensitization; device modeling and parameter extraction; growth, alloys and clathrates; metastability, hydrogen, atomic and electronic structure; defects and charge transport; and heterogeneous silicon--formation, properties and devices. It includes 152 papers.

Schropp, R. [ed.] [Utrecht Univ. (Netherlands); Branz, H.M. [ed.] [National Renewable Energy Lab., Golden, CO (United States); Shimizu, Isamu [ed.] [Tokyo Inst. of Tech. (Japan); Wagner, S. [ed.] [Princeton Univ., NJ (United States); Hack, M. [ed.

1999-08-01T23:59:59.000Z

174

Joining of porous silicon carbide bodies  

DOE Patents (OSTI)

A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

Bates, Carl H. (Worcester, MA); Couhig, John T. (Worcester, MA); Pelletier, Paul J. (Thompson, CT)

1990-05-01T23:59:59.000Z

175

Efficiency of silicon solar cells containing chromium  

DOE Patents (OSTI)

Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

1982-01-01T23:59:59.000Z

176

Evaluation of silicon-nitride ceramic valves.  

SciTech Connect

Silicon-nitride ceramic valves can improve the performance of both light- and heavy-duty automotive engines because of the superior material properties of silicon nitrides over current metal alloys. However, ceramics are brittle materials that may introduce uncertainties in the reliability and durability of ceramic valves. As a result, the lifetime of ceramic valves are difficult to predict theoretically due to wide variations in the type and distribution of microstructural flaws in the material. Nondestructive evaluation (NDE) methods are therefore required to assess the quality and reliability of these valves. Because ceramic materials are optically translucent and the strength-limiting flaws are normally located near the valve surface, a laser-scatter method can be used for NDE evaluation of ceramic valves. This paper reviews the progress in the development of this NDE method and its application to inspect silicon-nitride ceramic valves at various stages of manufacturing and bench and engine tests.

Sun, J. G.; Zhang, J. M.; Andrews, M. J.; Tretheway, J. S.; Phillips, N. S .L.; Jensen, J. A.; Nuclear Engineering Division; Univ. of Texas; Caterpillar, Inc.

2008-01-01T23:59:59.000Z

177

Fuyuan Silicon Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Fuyuan Silicon Co Ltd Fuyuan Silicon Co Ltd Jump to: navigation, search Name Fuyuan Silicon Co Ltd Place Baishan, Jilin Province, China Sector Solar Product A Chinese solar-grade polysilicon producer using metallurgical method. Coordinates 42.088902°, 127.218193° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.088902,"lon":127.218193,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

178

Laser Ablation Synthesis and Optical Characterization of Silicon Carbide Nanowires  

E-Print Network (OSTI)

Laser Ablation Synthesis and Optical Characterization of Silicon Carbide Nanowires Wensheng Shi Kong, SAR, China Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation and composite nanostructures,4 have been fabricated by this technique. Silicon carbide (SiC) is a wide

Zheng, Yufeng

179

Raman approach in silicon nanostructure at 1.5 micron  

Science Journals Connector (OSTI)

In the last three years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved significant results. However, limitations inherent to the physics of silicon have been pointed out, too. In order to overcome ... Keywords: Raman amplifiers, Raman effect, nonlinear optics, porous silicon

L. Sirleto; M. A. Ferrara; B. Jalali; I. Rendina

2007-09-01T23:59:59.000Z

180

Measurement of MTF Target Plasma Temperature Using Filtered Silicon Photodiodes  

E-Print Network (OSTI)

Measurement of MTF Target Plasma Temperature Using Filtered Silicon Photodiodes Presented at the 40 Plasma Temperature Using Filtered Silicon Photodiodes Magnetized Target Fusion (MTF) is an approach photodiodes, and a plasma-density interferometer. The data obtained from the array of seven filtered silicon

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Silicon/Organic Heterojunction to Block Minority Carriers  

E-Print Network (OSTI)

silicon solar cells are typically fabricated on thin high-quality silicon wafers ( (Fig. 4.1(a)). Conventional silicon solar cells use diffused p/p+ back-surface fields to reduce (c) Figure 4.1: (a) Band Diagram of solar cell in which recombination at the metal contact dominates

182

Novel Semiconducting Silicon and Germanium Nanotubes  

E-Print Network (OSTI)

In this work we report new silicon and germanium nanotube structures, with no corresponding stable carbon analogues and which cannot be described by integer chiral indices. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that the structures are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. They also present high Young modulus values (0.25 and 0.15 TPa, respectively).

Perim, Eric; Botari, Tiago; Galvao, Douglas S

2014-01-01T23:59:59.000Z

183

Deuterium in crystalline and amorphous silicon  

SciTech Connect

The authors report deuteron magnetic resonance (DMR) measurements on aged deuterium-implanted single crystal n-type silicon and comparisons with amorphous silicon spectra. The sample film was prepared six years ago by deuteration from a-D{sub 2} plasma and evaluated by a variety of experimental methods. Deuterium has been evolving with time and the present DMR signal shows a smaller deuteron population. A doublet from Si-D configurations along (111) has decreased more than have central molecular DMR components, which include 47 and 12 kHz FWHM gaussians. Transient DMR magnetization recoveries indicate spin lattice relaxation to para-D{sub 2} relaxation centers.

Borzi, R.; Ma, H.; Fedders, P.A.; Leopold, D.J.; Norberg, R.E.; Boyce, J.B.; Johnson, N.M.; Ready, S.E.; Walker, J.

1997-07-01T23:59:59.000Z

184

Dislocations in Webs of Germanium and Silicon  

Science Journals Connector (OSTI)

The generation of dislocations in webs of germanium or silicon is discussed. In silicon many of these dislocations intersect the web solid?liquid interface and are propagated during growth; they frequently align themselves into low?angle grain boundaries which tend to lie in the (01?1) plane and propagate in the [21?1?] crystal?growth direction. The dislocations also interact strongly with the twin planes in the web and with each other. The effects of these interactions are made visible by the peculiar etching characteristics of the dislocations involved.

S. O'Hara

1964-01-01T23:59:59.000Z

185

Silicon metal-semiconductor-metal photodetector  

DOE Patents (OSTI)

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

186

Silicon metal-semiconductor-metal photodetector  

DOE Patents (OSTI)

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1995-01-01T23:59:59.000Z

187

Amorphous Silicon Based Neutron Detector  

SciTech Connect

Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield using low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; Various single-junction and double junction detector devices have been fabricated; The detector devices fabricated have been systematically tested and analyzed. Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies developed here could be used to develop X-ray and neutron monitors that could be used in the future for security checks at the airports and other critical facilities. The project would lead to devices that could significantly enhance the performance of multi-billion dollar neutron source facilities in the US and bring our nation to the forefront of neutron beam sciences and technologies which have enormous impact to materials, life science and military research and applications.

Xu, Liwei

2004-12-12T23:59:59.000Z

188

Investigating the energy spectrum of silicon nanoclusters in a silicon dioxide matrix  

Science Journals Connector (OSTI)

This paper presents the results of an investigation of the energy spectrum of traps that occur in a silicon nanocomposite created using the new elion technologylow-temperature laser...

Grigorev, L V; Mikha?lov, A V

2014-01-01T23:59:59.000Z

189

High-Temperature Oxidation Resistance of Refractory Silicon NitrideSilicon Carbide Materials  

Science Journals Connector (OSTI)

Silicon nitride and carbide are promising materials for use as refractories; they are highly resistant to mineral acids and alkalis, have a high melting point, and are thermally very stable [1].

I. N. Godovannaya; O. I. Popova

1972-01-01T23:59:59.000Z

190

Cryogenic temperature characteristics of bulk silicon and Silicon-on-Sapphire devices.  

E-Print Network (OSTI)

??Studies of Silicon-on-Sapphire (SOS) CMOS device operation in cryogenic environments are presented. The main focus was to observe the characteristic changes in high, medium and (more)

Melton, Steven Allen

2012-01-01T23:59:59.000Z

191

Optical Property of Silicon Based Nanostructure and Fabrication of Silicon Nanostructure Solar Cells  

Science Journals Connector (OSTI)

Several types of silicon nanostructures have been achieved through a silver-assisted electroless etching technique. Radial p-n junction solar cells were designed and fabricated, and a...

Li, Meicheng

192

Solar cell structure incorporating a novel single crystal silicon material  

DOE Patents (OSTI)

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1983-01-01T23:59:59.000Z

193

High Q silicon carbide microdisk resonator  

SciTech Connect

We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12??10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Lee, Jonathan Y. [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Feng, Philip X.-L. [Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)

2014-05-05T23:59:59.000Z

194

PWR cores with silicon carbide cladding  

SciTech Connect

The feasibility of using silicon carbide rather than Zircaloy cladding, to reach higher power levels and higher discharge burnups in PWRs has been evaluated. A preliminary fuel design using fuel rods with the same dimensions as in the Westinghouse Robust Fuel Assembly but with fuel pellets having 10 vol% central void has been adopted to mitigate the higher fuel temperatures that occur due to the lower thermal conductivity of the silicon carbide and to the persistence of the open clad-pellet gap over most of the fuel life. With this modified fuel design, it is possible to achieve 18 month cycles that meet present-day operating constraints on peaking factor, boron concentration, reactivity coefficients and shutdown margin, while allowing batch average discharge burnups up to 80 MWD/kgU and peak rod burnups up to 100 MWD/kgU. Power uprates of 10% and possibly 20% also appear feasible. For non-uprated cores, the silicon carbide-clad fuel has a clear advantage that increases with increasing discharge burnup. Even for comparable discharge burnups, there is a savings in enriched uranium. Control rod configuration modifications may be required to meet the shutdown margin criterion for the 20% up-rate. Silicon carbide's ability to sustain higher burnups than Zircaloy also allows the design of a licensable two year cycle with only 96 fresh assemblies, avoiding the enriched uranium penalty incurred with use of larger batch sizes due to their excessive leakage. (authors)

Dobisesky, J. P.; Carpenter, D.; Pilat, E.; Kazimi, M. S. [Center for Advanced Nuclear Energy Systems, Dept. of Nuclear Science and Engineering, Massachusetts Inst. of Technology, 77 Massachusetts Avenue 24-215, Cambridge, MA 02139-4307 (United States)

2012-07-01T23:59:59.000Z

195

Electrical characterization of germanium-silicon alloy  

E-Print Network (OSTI)

Samples of strained germanium-silicon (Ge-Si) alloy were electrically characterized using resistivity and Hall-mobility measurements. The samples were obtained from a n-type Ge-Si strained epi-layer which was grown on a ptype substrate using MBE...

Kishore, Kumar P.

1994-01-01T23:59:59.000Z

196

Method of forming crystalline silicon devices on glass  

DOE Patents (OSTI)

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

McCarthy, A.M.

1995-03-21T23:59:59.000Z

197

Method of forming crystalline silicon devices on glass  

DOE Patents (OSTI)

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

198

Crystalline Silicon Photovolatic Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Crystalline Silicon Photovolatic Cell Basics Crystalline Silicon Photovolatic Cell Basics Crystalline Silicon Photovolatic Cell Basics August 19, 2013 - 4:58pm Addthis Crystalline silicon cells are made of silicon atoms connected to one another to form a crystal lattice. This lattice comprises the solid material that forms the photovoltaic (PV) cell's semiconductors. This section describes the atomic structure and bandgap energy of these cells. Atomic Structure Illustration of a silicon crystal with its 14 electrons orbiting a nucleus of protons and neutrons. As depicted in this simplified diagram, silicon has 14 electrons. The four electrons that orbit the nucleus in the outermost "valence" energy level are given to, accepted from, or shared with other atoms. All matter is composed of atoms, which are made up of positively charged

199

Superconductive silicon nanowires using gallium beam lithography.  

SciTech Connect

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01T23:59:59.000Z

200

Development efforts on silicon solar cells  

SciTech Connect

This report presents a summary of the major results from the silicon high-concentration solar cell program at Stanford University from the period 1983--1990. Following a detailed design study, efforts were focused upon experimental verification of the modeled results that predicted 28% efficiencies for a new 500X concentrator solar cell design. A history of the research progress is given detailing the critical experiments that enabled the demonstration of 19.6% cells in 1983, then subsequent improvements culminating in efficiencies over 28% by 1987. In addition to laboratory efficiency improvements, the report details advances in the understanding of the fundamental device physics and modeling of silicon solar cell operation. The latter stages of the program included the development of module-ready cells in large quantity for the EPRI prototype 500X concentrator modules. Several of these 48-cell modules are currently in the field under test.

Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (United States))

1992-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Structural relaxation of vacancies in amorphous silicon  

SciTech Connect

The authors have studied the structural relaxation of vacancies in amorphous silicon (a-Si) using a tight-binding molecular-dynamics method. The most significant difference between vacancies in a-Si and those in crystalline silicon (c-Si) is that the deep gap states do not show up in a-Si. This difference is explained through the unusual behavior of the structural relaxation near the vacancies in a-Si, which enhances the sp{sup 2} + p bonding near the band edges. They have also observed that the vacancies do not migrate below 450 K although some of them can still be annihilated, particularly at high defect density due to large structural relaxation.

Kim, E.; Lee, Y.H.; Chen, C.; Pang, T.

1997-07-01T23:59:59.000Z

202

Bonding defects in hydrogenated amorphous silicon  

SciTech Connect

A mechanism for charged-carrier-trapping-induced defect metastability in hydrogenated amorphous silicon (a-Si:H) and in hydrogenated amorphous silicon alloys containing relatively high concentrations of oxygen and/or nitrogen atoms (a-Si:X:H, X = O or N) is described. The experimental results that identified this defect metastability mechanism were (i) differences in the Staebler-Wronski effect in a-Si:H and a-Si:N:H alloys prepared from N{sub 2} and NH{sub 3} source gases by remote plasma-enhanced chemical-vapor deposition, and (ii) differences in defect generation at N-atom terminated Si-SiO{sub 2} interfaces prepared from NH{sub 3} and N{sub 2}O.

Lucovsky, G.; Yang, H. [North Carolina State Univ., Raleigh, NC (United States)

1996-12-31T23:59:59.000Z

203

Synthesis of silicon and germanium nanowires.  

SciTech Connect

The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

Clement, Teresa J. (Arizona State University); Hsu, Julia W. P.

2007-11-01T23:59:59.000Z

204

Silicon detector for high rate EXAFS applications  

SciTech Connect

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at {minus}35 C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at {minus}35 C. At room temperature (25 C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Kraner, H.W.; Siddons, D.P.; Furenlid, L.R. [Brookhaven National Lab., Upton, NY (United States); Bertuccio, G. [Politecnico di Milano (Italy). Dipt. di Elettronica e Informazione

1995-08-01T23:59:59.000Z

205

Capacitance measurements on silicon microstrip detectors  

SciTech Connect

Load capacitance is the most significant parameter determining the noise level of charge-sensitive readout electronics. This is the capacitance between the detecting electrode and all other conductors in the system. For the case of silicon microstrip detectors, the significant contributions are those from the other strips on the detector surface and also from the backplane. This article presents the results of capacitance measurements on both the junction and ohmic sides of detectors, and with various geometries. Double-sided detectors with a second metal layer and different readout patterns were also studied. In addition, the authors present measurements of microstrip capacitance after irradiation with both neutrons and photons made as part of the research by the RD20 collaboration into all aspects of the use of silicon microstrips at the Large Hadron Collider at CERN.

Masciocchi, S. (INFN, Milano (Italy) CERN, Geneva (Switzerland)); Peisert, A. (INFN, Padova (Italy)); Roenqvist, C. (SEFT, Helsinki (Finland)); Vite, D.; Wheadon, R. (Imperial Coll., London (United Kingdom))

1993-08-01T23:59:59.000Z

206

The CDF Run IIb Silicon Detector  

SciTech Connect

Fermilab plans to deliver 5-15 fb{sup -1} of integrated luminosity to the CDF and D0 experiments. The current inner silicon detectors at CDF (SVXIIa and L00) will not tolerate the radiation dose associated with high luminosity running and will need to be replaced. A new readout chip (SVX4) has been designed in radiation-hard 0.25 {micro}m CMOS technology. Single sided sensors are arranged in a compact structure, called a stave, with integrated readout and cooling systems. This paper describes the general design of the Run IIb system, testing results of prototype electrical components (staves), and prototype silicon sensor performance before and after irradiation.

M. Aoki; N. Bacchetta; S. Behari et al.

2004-02-25T23:59:59.000Z

207

Norwegian Silicon Refining AS | Open Energy Information  

Open Energy Info (EERE)

Refining AS Refining AS Jump to: navigation, search Name Norwegian Silicon Refining AS Place Oslo, Norway Zip 214 Product Oslo-based company with an upgraded metallurgical silicon (UMG) production process called the Stubergh method. Coordinates 59.91228°, 10.74998° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":59.91228,"lon":10.74998,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

208

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

209

Laboratory experiments with silicon solar cells  

Science Journals Connector (OSTI)

The uses of silicon solar cells as subjects of experiments in undergraduate teaching laboratories are discussed. The basic theory of these cells is presented including equivalent circuits and characteristic equations. Fundamental experiments on the power output and efficiency which are appropriate for non?science majors courses are detailed as well as more advanced experiments on cell parameters. Experimental results and agreement with theory are presented for a typical inexpensive cell.

D. W. Kammer; M. A. Ludington

1977-01-01T23:59:59.000Z

210

Thermal Conductance of Thin Silicon Nanowires  

Science Journals Connector (OSTI)

The thermal conductance of individual single crystalline silicon nanowires with diameters less than 30nm has been measured from 20to 100K. The observed thermal conductance shows unusual linear temperature dependence at low temperatures, as opposed to the T3 dependence predicted by the conventional phonon transport model. In contrast to previous models, the present study suggests that phonon-boundary scattering is highly frequency dependent, and ranges from nearly ballistic to completely diffusive, which can explain the unexpected linear temperature dependence.

Renkun Chen, Allon I. Hochbaum, Padraig Murphy, Joel Moore, Peidong Yang, and Arun Majumdar

2008-09-02T23:59:59.000Z

211

Silicon Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Micromachined Dimensional Calibration Silicon Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines 1 Silicon Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines 2 Sandia National Laboratories PO Box 5800 Albuquerque, NM 87185 USA Hy D. Tran, PhD, PE Phone: (505)844-5417 Fax: (505)844-4372 hdtran@sandia.gov AFFIRMATION: I affirm that all information submitted as a part of, or supplemental to, this entry is a fair and accurate representation of this product. ___________________________________ Hy D. Tran Not a joint entry. Silicon Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines The silicon hybrid artifact is an anisotropic-etched silicon standard that is used as a calibration reference artifact to calibrate vision-based and

212

Porous siliconformation and etching process for use in silicon micromachining  

DOE Patents (OSTI)

A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

Guilinger, Terry R. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Martin, Jr., Samuel B. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

213

Method for forming silicon on a glass substrate  

DOE Patents (OSTI)

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

214

Copper-assisted, anti-reflection etching of silicon surfaces  

DOE Patents (OSTI)

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

Toor, Fatima; Branz, Howard

2014-08-26T23:59:59.000Z

215

Diamond-Silicon Carbide Composite And Method For Preparation Thereof  

DOE Patents (OSTI)

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Qian, Jiang (Los Alamos, NM); Zhao, Yusheng (Los Alamos, NM)

2005-09-06T23:59:59.000Z

216

Hydrogenated amorphous silicon-germanium alloys  

SciTech Connect

This report describes the effects of the germanium fraction in hydrogenated amorphous silicon-germanium alloys on various parameters, especially those that are indicators of film quality, and the impact of deposition methods, feedgas mixtures, and other deposition parameters on a SiGe:H and a-SiGe:H:F film characteristics and quality. Literature data show the relationship between germanium content, hydrogen content, deposition method (various glow discharges and CVD), feedgas lmixture, and other parameters and properties, such as optical band gap, dark and photoconductivities, photosensitivity, activation energy, Urbach parameter, and spin density. Some of these are convenient quality indicators; another is the absence of microstructure. Examining RF glow discharge with both a diode and triode geometry, DC proximity glow discharge, microwave glow discharge, and photo-CVD, using gas mixtures such as hydrogen-diluted and undiluted mixtures of silane/germane, disilane/germane, silane/germaniumtetrafluoride, and others, it was observed that hydrogen dilution (or inert gas dilution) is essential in achieving high photosensitivity in silicon-germanium alloys (in contradistinction to amorphous hydrogenated silicon). Hydrogen dilution results in a higher photosensitivity than do undiluted gas mixtures. 81 refs., 42 figs., 7 tabs.

Luft, W.

1988-02-01T23:59:59.000Z

217

Molybdenum enhanced low-temperature deposition of crystalline silicon nitride  

DOE Patents (OSTI)

A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.

Lowden, R.A.

1994-04-05T23:59:59.000Z

218

PHYSICAL REVIEW B 90, 115209 (2014) Computational search for direct band gap silicon crystals  

E-Print Network (OSTI)

abundance, silicon is the preferred solar-cell material despite the fact that current silicon materials have semiconductor. For this reason, the most widely used solar-cell materials are all silicon based [1]. Current

Lee, Jooyoung

219

E-Print Network 3.0 - amorphous silicon oxynitride Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

poly-silicon... and Insulators SiO2 Si3N4 Conductors Poly-Silicon (doped and undoped) Tungsten Copper 12;HarvardFabrication2... Single Crystal Silicon SiO2 deposition...

220

Argonne CNM Highlight: Atomic Scale Modeling and Simulation of Silicon  

NLE Websites -- All DOE Office Websites (Extended Search)

Atomic Scale Modeling and Simulation of Silicon Anisotropic Etching Atomic Scale Modeling and Simulation of Silicon Anisotropic Etching N. Moldovan A well-known process in microelectromechanical systems (MEMS) technology involves etching silicon in alkaline solutions, which produces accurate 3-D silicon structures, sometimes with atomic smoothness, by taking advantage of the strong dependence of the etching rate on crystal orientation. Significant experimental effort has been made to characterize this anisotropy (polar etching rate diagrams, temperature dependencies, roughness measurements, in situ STM records during etching, electrochemistry studies etc.). The experimental results were used in complex simulations that successfully predicted the evolution of the 3-D geometry, starting from the experimentally measured etching diagrams.

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Recombination and Trapping in Multicrystalline Silicon Solar Cells .  

E-Print Network (OSTI)

??In broad terms, this thesis is concerned with the measurement and interpretation of carrier lifetimes in multicrystalline silicon. An understanding of these lifetimes in turn (more)

Macdonald, D

2008-01-01T23:59:59.000Z

222

Lobbyist Disclosure Form - Silicon Valley | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Lobbyist Disclosure Form - Silicon Valley.pdf More Documents & Publications Lobbyist Disclosure Form - AltEn Lobbyist Disclosure Form - First Solar Interested Parties - Shipp...

223

GCL Solar Energy Technology Holdings formerly GCL Silicon aka...  

Open Energy Info (EERE)

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

224

An infrared and luminescence study of tritiated amorphous silicon  

SciTech Connect

Tritium has been incorporated into amorphous silicon. Infrared spectroscopy shows new infrared vibration modes due to silicon-tritium (Si-T) bonds in the amorphous silicon network. Si-T vibration frequencies are related to Si-H vibration frequencies by simple mass relationships. Inelastic collisions of {beta} particles, produced as a result of tritium decay, with the amorphous silicon network results in the generation of electron-hole pairs. Radiative recombination of these carriers is observed. Dangling bonds associated with the tritium decay reduce luminescence efficiency.

Sidhu, L.S.; Kosteski, T.; Kherani, N.P.; Gaspari, F.; Zukotynski, S.; Shmayda, W.

1997-07-01T23:59:59.000Z

225

Coating for Silicon Solar Cell by Using Silvaco Software  

E-Print Network (OSTI)

efficiency of SiO 2/Si3N 4silicon solar cell. The solar cell structure was modelled by using Silvaco software

A. Lennie; H. Abdullah; Z. M. Shila; M. A. Hannan

226

Pitch-variable blazed grating consisting of freestanding silicon beams  

Science Journals Connector (OSTI)

Theoretical analysis is presented for a pitch-variable blazed grating which consists of freestanding silicon beams. The pitch-variable blazed grating is implemented by combining...

Wang, Yongjin; Kanamori, Yoshiaki; Hane, Kazuhiro

2009-01-01T23:59:59.000Z

227

Optimal design of aperiodic, vertical silicon nanowire structures for photovoltaics  

Science Journals Connector (OSTI)

We design a partially aperiodic, vertically-aligned silicon nanowire array that maximizes photovoltaic absorption. The optimal structure is obtained using a random walk algorithm...

Lin, Chenxi; Povinelli, Michelle L

2011-01-01T23:59:59.000Z

228

ESnet, Orange Silicon Valley, and Bay Microsystems Demonstrate...  

NLE Websites -- All DOE Office Websites (Extended Search)

ESnet, Orange Silicon Valley, and Bay Microsystems Demonstrate the World's First Long Distance 40Gbps RDMA Data Transfer News & Publications ESnet in the News ESnet News Media &...

229

Silicon Nanostructure-based Technology for Next Generation Energy...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual...

230

Process and apparatus for obtaining silicon from fluosilicic acid  

DOE Patents (OSTI)

Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

Sanjurjo, Angel (San Jose, CA)

1988-06-28T23:59:59.000Z

231

Mesoporous silicon photonic crystal microparticles: towards single-cell optical  

E-Print Network (OSTI)

in theranostics. Mesoporous silicon, where pores are in the size range of 2�50 nm, is the most relevant material

Kilian, Kristopher A.

232

Silicon`s role in determining swelling in neutron-irradiated Fe-Cr-Ni-Si alloys  

SciTech Connect

Two silicon-modified alloy series, one based on Fe-15Cr-20Ni and another based on Fe-15Cr-25Ni were irradiated at target temperatures between 399 and 649{degree}C in EBR-II. The influence of silicon on swelling is more complex than previously envisioned and indicates that silicon plays two or more competing roles while in solution. Radiation-induced formation of {gamma}{prime} (Ni{sub 3}Si) precipitates is dependent on silicon and nickel content, as well as temperature. Precipitation of {gamma}{prime} appears to play only a minor role in void formation.

Sekimura, N. [Tokyo Univ., Tokai, Ibaraki (Japan); Garner, F. A. [Pacific Northwest Lab., Richland, WA (United States); Newkirk, J.W. [Missouri Univ., Rolla, MO (United States)

1991-11-01T23:59:59.000Z

233

E-Print Network 3.0 - alice silicon strip Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

results for: alice silicon strip Page: << < 1 2 3 4 5 > >> 1 Department of Physics & Astronomy Experimental Particle Physics Group Summary: functions of the ALICE silicon system...

234

E-Print Network 3.0 - assisted silicon dioxide Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

; Engineering 12 Ultrafast and direct imprint of nanostructures in silicon Summary: of laser-assisted direct imprint (LADI) of nanostructures in silicon. a, A quartz mould is...

235

Response of Nanocrystalline 3C Silicon Carbide to Heavy-Ion Irradiatio...  

NLE Websites -- All DOE Office Websites (Extended Search)

Nanocrystalline 3C Silicon Carbide to Heavy-Ion Irradiation. Response of Nanocrystalline 3C Silicon Carbide to Heavy-Ion Irradiation. Abstract: Nanostructured materials are...

236

E-Print Network 3.0 - amorphous silicon solar Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

for a research organization in the optimization of the amorphous silicon solar cell... photovoltaics on flexible substrates. Managed amorphous silicon research program...

237

DOE-funded Silicon-Graphene Research Leads to Chicago-based Technology...  

NLE Websites -- All DOE Office Websites (Extended Search)

DOE-funded Silicon-Graphene Research Leads to Chicago-based Technology Startup Graduate students at Northwestern University are commercializing a silicon (Si)-graphene technology...

238

E-Print Network 3.0 - area multicrystalline silicon Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

key sensitive parameters for environmental impacts of grid-connected PV systems with LCA , In Proceedings of the 23rd Summary: grade silicon Multicrystalline silicon ingot...

239

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

240

E-Print Network 3.0 - amorphous silicon carbide Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

50, mai 1989 Summary: revetementdans le substrat. Abstract - Cuttingtools made of A1203+TiC, silicon nitride,carbide, and stabi- lized... with Tic, silicon nitride,...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

E-Print Network 3.0 - amorphous silicon germanium Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

6 September 2007; published online 17 October 2007 Amorphous silicon... -fiber optoelectronics.5,6 We have shown that crystalline silicon and ... Source: Gopalan, Venkatraman -...

242

E-Print Network 3.0 - amorphous-silicon-based solar cell Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer Summary: light exposure as do the amorphous silicon-based...

243

Nanocrystalline Silicon Quantum Dot Light Emitting Diodes Using Metal Oxide Charge Transport Layers.  

E-Print Network (OSTI)

??Silicon-based lighting show promise for display and solid state lighting use. Here we demonstrate a novel thin film light emitting diode device using nanocrystalline silicon (more)

Zhu, Jiayuan

2013-01-01T23:59:59.000Z

244

Silicon-on-glass pore network micromodels with oxygen-sensing...  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon-on-glass pore network micromodels with oxygen-sensing fluorophore films for chemical imaging and defined spatial Silicon-on-glass pore network micromodels with...

245

NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)  

SciTech Connect

Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

Not Available

2014-08-01T23:59:59.000Z

246

Light-induced degradation at the silicon/silicon dioxide interface  

SciTech Connect

Single-crystal silicon point-contact solar cells show a degradation in their efficiency after being exposed to concentrated sunlight. This change has been linked to an increase in the surface recombination velocity. A similar effect is produced by carrier injection under forward bias. The annealing kinetics, the role of ultraviolet light, and possible causes for the creation of surface states are discussed.

Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

1988-04-25T23:59:59.000Z

247

Hole Selective MoOx Contact for Silicon Solar Cells  

Science Journals Connector (OSTI)

Hole Selective MoOx Contact for Silicon Solar Cells ... This work has important implications toward enabling a novel class of junctionless devices with applications for solar cells, light-emitting diodes, photodetectors, and transistors. ... Junctionless solar cells; silicon photovoltaics; heterojunctions; dopant-free contact; molybdenum trioxide ...

Corsin Battaglia; Xingtian Yin; Maxwell Zheng; Ian D. Sharp; Teresa Chen; Stephen McDonnell; Angelica Azcatl; Carlo Carraro; Biwu Ma; Roya Maboudian; Robert. M. Wallace; Ali Javey

2014-01-07T23:59:59.000Z

248

Low cost routes to high purity silicon and derivatives thereof  

DOE Patents (OSTI)

The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon).

Laine, Richard M; Krug, David James; Marchal, Julien Claudius; Mccolm, Andrew Stewart

2013-07-02T23:59:59.000Z

249

Nuclear magnetic resonance studies of hydrogen in amorphous silicon  

SciTech Connect

Proton and deuteron NMR in hydrogenated amorphous silicon yield quantitative measures of species-specific structural configurations and their dynamics. Populations of silicon-bonded and molecular hydrogens correlate with photovoltaic quality, doping, illumination/dark anneal sequences, and with infrared and other characterizations. High quality films contain substantial populations of nanovoid-trapped molecular hydrogen.

Norberg, R.E.; Fedders, P.A.; Leopold, D.J. [Washington Univ., St. Louis, MO (United States). Dept. of Physics

1996-12-31T23:59:59.000Z

250

Molybdenum disilicide composites reinforced with zirconia and silicon carbide  

DOE Patents (OSTI)

Compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

Petrovic, John J. (Los Alamos, NM)

1995-01-01T23:59:59.000Z

251

PECVD Silicon Carbide Waveguides for Multichannel G. Pandraud  

E-Print Network (OSTI)

PECVD Silicon Carbide Waveguides for Multichannel Sensors G. Pandraud Kavli Institute of Nano Deposition (PECVD) Silicon Carbide (SiC) waveguides. Thin SiC films have been deposited onto Si substrates with a SiO2 film acting as a cladding layer around the carbide core. In the sensor, the evanescent tale

Technische Universiteit Delft

252

Epitaxial graphene on silicon carbide: Introduction to structured graphene  

E-Print Network (OSTI)

Epitaxial graphene on silicon carbide: Introduction to structured graphene Ming Ruan 1 , Yike Hu 1, France Abstract We present an introduction to the rapidly growing field of epitaxial graphene on silicon present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now

Paris-Sud XI, Université de

253

Investigating the efficiency of Silicon Solar cells at  

E-Print Network (OSTI)

Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

Attari, Shahzeen Z.

254

Superlattice doped layers for amorphous silicon photovoltaic cells  

DOE Patents (OSTI)

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Arya, Rajeewa R. (Doylestown, PA)

1988-01-12T23:59:59.000Z

255

Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga  

E-Print Network (OSTI)

-Si have long been of fundamental interest, and amorphous silicon a-Si:H /c-Si heterojunctions are now is about the current limit achieved with a-Si:H/c-Si heterojunctions. The largest VOC we ob- tained was 0Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga and E. A. Schiff

Schiff, Eric A.

256

Cecilia Gerber, Fermilab The D0 Silicon Microstrip Tracker  

E-Print Network (OSTI)

1 Cecilia Gerber, Fermilab The D0 Silicon Microstrip Tracker Cecilia Gerber - Fermilab Outline · Conclusions and Outlook #12;2 Cecilia Gerber, Fermilab · Run II will start March 1st 2001 · Center forward preshower #12;3 Cecilia Gerber, Fermilab D0 Silicon Microstrip Tracker Barrel H-disk F

Gerber, Cecilia E.

257

Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films  

E-Print Network (OSTI)

Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films K. Pangal,a) J. C August 1998; accepted for publication 21 October 1998 We report that a room temperature hydrogen plasma thermal crystallization of amorphous silicon time by a factor of five. Exposure to hydrogen plasma reduces

258

Hydrogen penetration into silicon during wet-chemical etching  

Science Journals Connector (OSTI)

Hydrogen incorporation during wet-chemical etching into p-type silicon was studied by CV measurements. Etching rates between 0.08 and 0.5 m/s were generated by different ratios of HF:HNO3:CH3COOH solutions. CV measurements ... Keywords: Schottky diodes, hydrogen, silicon, wet chemical etching

J. Weber; S. Knack; O. V. Feklisova; N. A. Yarykin; E. B. Yakimov

2003-05-01T23:59:59.000Z

259

Molybdenum disilicide composites reinforced with zirconia and silicon carbide  

DOE Patents (OSTI)

Compositions are disclosed consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

Petrovic, J.J.

1995-01-17T23:59:59.000Z

260

Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics  

E-Print Network (OSTI)

Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics A thesis presented Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics Eric Mazur Brian R. Tull Abstract irradiated surface layer to the grain boundaries. #12;iv Lastly, we measure the photovoltaic properties

Mazur, Eric

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Reactive sticking coefficients of silane on silicon  

SciTech Connect

Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition rate measurements using molecular beam scattering and a very low pressure cold wall reactor. The RSCs have non-Arrhenius temperature dependences and decreases with increasing flux at low (710/sup 0/) temperatures. A simple model involving dissociative adsorption of silane is consistent with these results. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction.

Buss, R.J.; Ho, P.; Breiland, W.G.; Coltrin, M.E.

1988-09-15T23:59:59.000Z

262

Antimony Induced Crystallization of Amorphous Silicon  

Science Journals Connector (OSTI)

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1?m were formed when the antimony layer was deposited by MBE (molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

Y. Wang; H.Z. Li; C.N. Yu; G.M. Wu; I. Gordon; P. Schattschneider; O. Van Der Biest

2007-01-01T23:59:59.000Z

263

Silicon point contact concentrator solar cells  

SciTech Connect

Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 micron thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/sq cm. Efficiency peaked at 23 percent at 11 W/sq cm measured at 22-25 C. Strategies for obtaining higher efficiencies with this solar cell design are discussed. 8 references.

Sinton, R.A.; Kwark, Y.; Swirhun, S.; Swanson, R.M.

1985-08-01T23:59:59.000Z

264

Ion bombardment and disorder in amorphous silicon  

SciTech Connect

The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects.

Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

1997-07-01T23:59:59.000Z

265

Subtleties of capacitance transients in amorphous silicon  

SciTech Connect

Using junction capacitance methods, the authors describe the effect of contacts on charge emission transients in n-type hydrogenated amorphous silicon. The results demonstrate some of the difficulties encountered in observing and interpreting anomalous temperature independent emission transients (slow relaxation). In this paper, the authors present additional data and reconcile the absence of anomalous emission transients in some cases with a discussion of the dynamics of depletion width filling. The authors show that the transient capacitance response of Schottky structure is not only related to the contact configuration but is connected to the rate of charge injection into the depletion region.

Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States); Lips, K. [Hahn-Meitner-Inst., Berlin (Germany)

1996-12-31T23:59:59.000Z

266

Arrays of ultrathin silicon solar microcells  

DOE Patents (OSTI)

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2014-03-25T23:59:59.000Z

267

IR permittivities for silicides and doped silicon  

SciTech Connect

The complex permittivity for Pt, Pd, Ni, and Ti-silicide films as well as heavily doped p- and n-type silicon were determined by ellipsometry over the energy range 0.031 eV to 4.0 eV. Fits to the Drude model gave bulk plasma and relaxation frequencies. Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy, secondary ion mass spectrometry, and four-point probe measurements complemented the optical characterization. Calculations from measured permittivities of waveguide loss and mode confinement suggest that the considered materials are better suited for long-wavelength surface-plasmon-polariton waveguide applications than metal films.

Cleary, J. W.; Peale, R. E.; Smith, C. W.; Ishigami, M. [Department of Physics, University of Central Florida, Orlando, Florida 32816 (United States); Shelton, D. J.; Boreman, G. D. [College of Optics (CREOL), University of Central Florida, Orlando, Florida 32816 (United States); Soref, R.; Drehman, A.; Buchwald, W. R. [Sensors Directorate, Air Force Research Laboratory, Hanscom Air Force Base, Massachusetts 01731 (United States)

2010-04-15T23:59:59.000Z

268

Origami-enabled deformable silicon solar cells  

SciTech Connect

Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

2014-02-24T23:59:59.000Z

269

Polycrystalline silicon resistor trimming by laser annealing  

E-Print Network (OSTI)

. Measuring Hall mobility with the van der Pauw pattern. Hall mobility measurexaent station. 41 41 43 45 45 CHAPTER I INTRODUCTION Lasers have been used to trim analog and analog/digital integrated circuits (IC's) since the late 1960's [1] ? [3... by pyrolytic decomposition of silane gas (SiH4) into silicon atoms and hydrogen gas [22] SiH4 ~ Si + 2Hs. This chemical vapor deposition (CVD) process can be performed at atmospheric pressure or low pressure. The substrate is maintained at an elevated...

Crowley, Robert Terrence

1989-01-01T23:59:59.000Z

270

Clean Cities: Silicon Valley Clean Cities (San Jose) coalition  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Silicon Valley Clean Cities (San Jose) Coalition Silicon Valley Clean Cities (San Jose) Coalition The Silicon Valley Clean Cities (San Jose) coalition works with vehicle fleets, fuel providers, community leaders, and other stakeholders to reduce petroleum use in transportation. Silicon Valley Clean Cities (San Jose) coalition Contact Information Margo Sidener 408-998-5865 margo@lungsrus.org Patricia Tind 408-998-5865 patricia@lungsrus.org Coalition Website Clean Cities Coordinators Coord Margo Sidener Coord Coord Patricia Tind Coord Photo of Margo Sidener Margo Sidener has been the coordinator of the Silicon Valley (San Jose) Clean Cities coalition since 2006. She also serves as the president and CEO of Breathe California of the Bay Area, the "Local Clean Air and Healthy Lungs Leader," a nonprofit grassroots organization founded in 1911 to fight

271

RF Sputtering for preparing substantially pure amorphous silicon monohydride  

DOE Patents (OSTI)

A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Jeffrey, Frank R. (Ames, IA); Shanks, Howard R. (Ames, IA)

1982-10-12T23:59:59.000Z

272

Silicon (100)/SiO2 by XPS  

SciTech Connect

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25T23:59:59.000Z

273

Inverted random nanopyramids patterning for crystalline silicon photovoltaics  

E-Print Network (OSTI)

We demonstrate a nanopatterning technique for silicon photovoltaics, which optically outperforms conventional micron-scale random pyramids, while decreasing by a factor of ten the quantity of silicon lost during the texturing process. We combine hole-mask colloidal lithography, a bottom-up nanolithography technique, with reactive ion etching to define nanopyramids at the surface of a silicon wafer. Thanks to the self-organised aspect of the technique, the beads are randomly distributed, however keeping a interbead distance of the order of their diameter. We tune the nanopattern feature size to maximize the absorption in the crystalline silicon by exploiting both anti-reflection and light trapping. When optimized, the nanopyramids lead to a higher absorption in the crystalline silicon than the conventional micron-scale random pyramids in the visible and near the band edge, with a superior robustness to variations of the angle of the incident light. As the nanopatterning technique presented here is simple, we e...

Daif, Ounsi El; Niesen, Bjoern; Yaala, Marwa Ben; Sharma, Parikshit Pratim; Depauw, Valerie; Gordon, Ivan

2013-01-01T23:59:59.000Z

274

NREL Core Program (NCPV), Session: Film Silicon (Presentation)  

SciTech Connect

This project supports the Solar America Initiative by: R and D that contributes to goal of grid parity by 2015; research to fill the industry R and D pipeline for next-generation low-cost scalable products; development of industry collaborative research; and improvement of NREL tools and capabilities for film silicon research. The project addresses both parts of film silicon roadmap: (1) amorphous-silicon-based thin film PV--amorphous and nanocrystalline materials, present '2nd generation' technology, 4% of world PV sales in 2007; (2) advanced R and D toward film crystal silicon--definition, large-grained or single-crystal silicon < 100 {micro}m thick; 3-8 year horizon; and goal of reaching 15% cells at area costs approaching thin films.

Branz, H. M.

2008-04-01T23:59:59.000Z

275

Amorphous Silicon: The other Silicon J.C. Sturm, Y. Huang, L. Han, T. Liu, *B. Hekmatshoar,  

E-Print Network (OSTI)

for cost reduction, and crystalline silicon- amorphous silicon interfaces for high performance solar cells for analog and high duty cycle applications, flexible substrates for products with new form factors, printing Fig. 2. Pixel circuits for (a) active matrix liquid crystal display and (b) active matrix organic

276

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION  

E-Print Network (OSTI)

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION Barbara Terheiden,1* Thomas Kunz,2 Ingo Burkert2 , Renate Horbelt,1, D-91058 Erlangen, Germany ABSTRACT: Convection assisted chemical vapor deposition (CoCVD) is applied

277

High resolution amorphous silicon radiation detectors  

DOE Patents (OSTI)

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

Street, Robert A. (Palo Alto, CA); Kaplan, Selig N. (El Cerrito, CA); Perez-Mendez, Victor (Berkeley, CA)

1992-01-01T23:59:59.000Z

278

Boron-Loaded Silicone Rubber Scintillators  

SciTech Connect

Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

2003-05-12T23:59:59.000Z

279

High resolution amorphous silicon radiation detectors  

DOE Patents (OSTI)

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

1992-05-26T23:59:59.000Z

280

Cordierite silicon nitride filters. Final report  

SciTech Connect

The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

Sawyer, J.; Buchan, B. [Acurex Environmental Corp., Mountain View, CA (United States); Duiven, R.; Berger, M. [Aerotherm Corp., Mountain View, CA (United States); Cleveland, J.; Ferri, J. [GTE Products Corp., Towanda, PA (United States)

1992-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD  

SciTech Connect

An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed increase in the optical bandgap of a-Si:H films close to the a-Si:H/cSi interface.

Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

2014-05-15T23:59:59.000Z

282

Method of and apparatus for removing silicon from a high temperature sodium coolant  

DOE Patents (OSTI)

A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

Yunker, Wayne H. (Richland, WA); Christiansen, David W. (Kennewick, WA)

1987-01-01T23:59:59.000Z

283

Study of effects of radiation on silicone prostheses. [/sup 60/Co  

SciTech Connect

Radiation effects on silicone gel and dose distribution of radiation through mammary prostheses were studied. Silicone gel behaves like tissue. Half value thickness for silicone gel and water are almost the same. Linear absorption coefficient for silicone gel and water are comparable.

Shedbalkar, A.R.; Devata, A.; Padanilam, T.

1980-06-01T23:59:59.000Z

284

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma  

E-Print Network (OSTI)

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency Semiconductor, Eden Prairie, MN, USA Received 10 July 2002; accepted 14 July 2002 Abstract Silicon carbide films; Nanomaterials; Silicon carbide; Thermal plasmas; Thin films; Si tetrachlorine precursor Silicon carbide has

Zachariah, Michael R.

285

Heavy Element Abundances in Presolar Silicon Carbide Grains from Low-Metallicity AGB Stars  

E-Print Network (OSTI)

Heavy Element Abundances in Presolar Silicon Carbide Grains from Low-Metallicity AGB Stars Peter explosions. Silicon carbide is the best studied presolar mineral. Based on its isotopic compositions the identified presolar minerals are diamond, silicon carbide (SiC), graphite, silicon nitride (Si3N4), corundum

286

SIGNATURES OF THE s-PROCESS IN PRESOLAR SILICON CARBIDE GRAINS: BARIUM THROUGH HAFNIUM  

E-Print Network (OSTI)

SIGNATURES OF THE s-PROCESS IN PRESOLAR SILICON CARBIDE GRAINS: BARIUM THROUGH HAFNIUM Qing-Zhu Yin have been determined in a silicon carbide­rich sample of the Murchison carbonaceous chondrite, using carbide, silicon nitride, and various refractory oxides (e.g., Zinner 1998). Grains of silicon carbide (Si

Lee, Cin-Ty Aeolus

287

Rectification of evanescent heat transfer between dielectric-coated and uncoated silicon carbide plates  

E-Print Network (OSTI)

Rectification of evanescent heat transfer between dielectric-coated and uncoated silicon carbide://jap.aip.org/authors #12;Rectification of evanescent heat transfer between dielectric-coated and uncoated silicon carbide-infinite bodies of the dielectric-coated silicon carbide and uncoated silicon carbide. The permittivity

Fan, Shanhui

288

Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint  

SciTech Connect

Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

2012-06-01T23:59:59.000Z

289

Gas-phase silicon atom densities in the chemical vapor deposition of silicon from silane  

SciTech Connect

Silicon atom number density profiles have been measured using laser-induced fluorescence during the chemical vapor deposition of silicon from silane. Measurements were obtained in a rotating-disk reactor as a function of silane partial pressure and the amount of hydrogen added to the carrier gas. Absolute number densities were obtained using an atomic absorption technique. Results were compared with calculated density profiles from a model of the coupled fluid flow, gas-phase and surface chemistry for an infinite-radius rotating disk. An analysis of the reaction mechanism showed that the unimolecular decomposition of SiH{sub 2} is not the dominant source of Si atoms. Profile shapes and positions, and all experimental trends are well matched by the calculations. However, the calculated number density is up to 100 times smaller than measured.

Coltrin, M.E.; Breiland, W.G.; Ho, P.

1993-12-31T23:59:59.000Z

290

Separation of Nuclear Fuel Surrogates from Silicon Carbide Inert Matrix  

SciTech Connect

The objective of this project has been to identify a process for separating transuranic species from silicon carbide (SiC). Silicon carbide has become one of the prime candidates for the matrix in inert matrix fuels, (IMF) being designed to reduce plutonium inventories and the long half-lives actinides through transmutation since complete reaction is not practical it become necessary to separate the non-transmuted materials from the silicon carbide matrix for ultimate reprocessing. This work reports a method for that required process.l

Dr. Ronald Baney

2008-12-15T23:59:59.000Z

291

Effects of dietary silicon on bone characteristics of poultry  

E-Print Network (OSTI)

of the metal which they contain. Evidence indicates that silicon in the form of sodium meta-silicate (Na Si0 . 9H20) may be tied in with early bone calcification of weanling rats (Carlisle, 1970). The present study was designed to determine if additional..., demonstrated that many of the early workers on the distribution of silicon in the animal body reported values much too high. The amount of silicon reported in biological materials varies greatly; rats have approximately two percent silica in whole blood...

Plyler, James Edward

2012-06-07T23:59:59.000Z

292

Method of fabricating silicon carbide coatings on graphite surfaces  

DOE Patents (OSTI)

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

1994-07-26T23:59:59.000Z

293

Method of fabricating silicon carbide coatings on graphite surfaces  

DOE Patents (OSTI)

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

Varacalle, Jr., Dominic J. (Idaho Falls, ID); Herman, Herbert (Port Jefferson, NY); Burchell, Timothy D. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

294

Method for forming fibrous silicon carbide insulating material  

DOE Patents (OSTI)

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Wei, George C. (Oak Ridge, TN)

1984-01-01T23:59:59.000Z

295

Method for forming fibrous silicon carbide insulating material  

DOE Patents (OSTI)

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Wei, G.C.

1983-10-12T23:59:59.000Z

296

Status and performance of the CDF Run II silicon detector  

SciTech Connect

The CDF Run II silicon detector with its 8 layers of double- and single-sided silicon microstrip sensors and a total 722,432 readout channels is one of the largest silicon detector devices currently in use by a HEP experiment. We report our experience commissioning and operating this complex device during the first 4 years of Run II. As the luminosity delivered by the Tevatron increases, we have observed measurable effects of radiation damage in studies of charge collection and noise versus applied bias voltage at many different integrated luminosities. We discuss these studies and their impact on the expected lifetime of the detector.

Boveia, A.; /UC, Santa Barbara

2005-01-01T23:59:59.000Z

297

Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467  

SciTech Connect

This book was divided into the following parts: Staebler-Wronski and Fundamental Defect Studies in Amorphous Silicon; The Story of Hydrogen in Amorphous Silicon; Photoelectric Properties of Amorphous Silicon; Deposition and Properties of Microcrystalline Silicon; Deposition Studies for Amorphous Silicon and Related Materials; Solar Cells; Thin-Film Transistors; and Sensors and Novel Device Concepts. Separate abstracts were prepared for most of the papers in the volume.

Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.

1997-07-01T23:59:59.000Z

298

Method of preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals  

DOE Patents (OSTI)

A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

Peng, Yu-Min (Hsinchu, TW); Wang, Jih-Wen (Hsinchu, TW); Liue, Chun-Ying (Tau-Yung, TW); Yeh, Shinn-Horng (Kaohsiung, TW)

1994-01-01T23:59:59.000Z

299

Antifuse with a single silicon-rich silicon nitride insulating layer  

DOE Patents (OSTI)

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22T23:59:59.000Z

300

Peak Sun Silicon Corp | Open Energy Information  

Open Energy Info (EERE)

Corp Corp Jump to: navigation, search Name Peak Sun Silicon Corp Place Carlsbad, California Zip 92008 Product US-based manufacturer of granular electronic-grade polysilicon for the PV industry. Coordinates 31.60396°, -100.641609° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.60396,"lon":-100.641609,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Thin Silicon MEMS Contact-Stress Sensor  

SciTech Connect

This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to the diaphragm, and maintain uniform thickness. The CS sensors have a highly linear output in the load range tested (0-2.4 MPa) with an average accuracy of {+-} 1.5%.

Kotovsky, J; Tooker, A; Horsley, D

2010-03-22T23:59:59.000Z

302

27. 5-percent silicon concentrator solar cells  

SciTech Connect

Recent advances in silicon solar cells using the backside point-contact configuration have been extended resulting in 27.5-percent efficiencies at 10 W/sq cm (100 suns, 24 C), making these the most efficient solar cells reported to date. The one-sun efficiencies under an AM1.5 spectrum normalized to 100 mW/sq cm are 22 percent at 24 C based on the design area of the concentrator cell. The improvements reported here are largely due to the incorportation of optical light trapping to enhance the absorption of weakly absorbed near bandgap light. These results approach the projected efficiencies for a mature technology which are 23-24 percent at one sun and 29 percent in the 100-350-sun (10-35 W/sq cm) range. 10 references.

Sinton, R.A.; Kwark, Y.; Gan, J.Y.; Swanson, R.M.

1986-10-01T23:59:59.000Z

303

A hybrid double-dot in silicon  

SciTech Connect

We report electrical measurements of a single arsenic dopant atom in the tunnel barrier of a silicon single-electron transistor (SET). In addition to performing the electrical characterisation of the individual dopants, we study the series electrical transport through the dopant and SET. We measure the bias triangles of this hybrid double-dot and show that we can tune the electrostatic coupling between the two sub-systems. Additionally, we measured SET in which an additional plunger gate allows the reduction of the electron number in the SET down to the few-electron regime where the dot presents well-defined spin configurations. Finally, we discuss the challenges of operating a dopant-dot hybrid system in the few-electron regime.

Gonzalez-Zalba, M. F.; Heiss, D.; Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge (United Kingdom)

2013-12-04T23:59:59.000Z

304

Comparison Measurements of Silicon Carbide Temperature Monitors  

SciTech Connect

As part of the efforts initiated through the Advanced Test Reactor (ATR) National Scientific User Facility (NSUF) program to make Silicon Carbide (SiC) temperature monitors available, a capability was developed at the Idaho National Laboratory (INL) to complete post-irradiation evaluations of these monitors. INL selected the resistance measurement approach for detecting peak irradiation temperature from SiC temperature monitors. To demonstrate this new capability, comparison measurements were completed by INL and Oak Ridge National Laboratory (ORNL) on identical samples subjected to identical irradiation conditions. Results reported in this paper indicate that the resistance measurement approach can yield similar peak irradiation temperatures if appropriate equipment is used and appropriate procedures are followed.

J. L. Rempe; K. G. Condie; D. L. Knudson; L. L. Snead

2010-06-01T23:59:59.000Z

305

High-purity, isotopically enriched bulk silicon  

SciTech Connect

The synthesis and characterization of dislocation-free, undoped, single crystals of Si enriched in all 3 stable isotopes is reported: {sup 28}Si (99.92%), {sup 29}Si (91.37%), and {sup 30}Si (89.8%). A silane-based process compatible with the relatively small amounts of isotopically enriched precursors that are practically available was used. The silane is decomposed to silicon on a graphite starter rod heated to 700-750 C in a recirculating flow reactor. A typical run produces 35 gm of polycrystalline Si at a growth rates of 5 {micro}m/min and conversion efficiency >95%. Single crystals are grown by the floating zone method and characterized by electrical and optical measurements. Concentrations of shallow dopants (P and B) are as low as mid-10{sup 13} cm{sup -3}. Concentrations of C and O lie below 10{sup 16} and 10{sup 15} cm{sup -3}, respectively.

Ager III, J.W.; Beeman, J.W.; Hansen, W.L.; Haller, E.E.; Sharp, I.D.; Liao, C.; Yang, A.; Thewalt, M.L.W.; Riemann, H.

2004-11-17T23:59:59.000Z

306

Method of casting silicon into thin sheets  

DOE Patents (OSTI)

Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.

Sanjurjo, Angel (San Jose, CA); Rowcliffe, David J. (Los Altos, CA); Bartlett, Robert W. (Tucson, AZ)

1982-10-26T23:59:59.000Z

307

Large Silicon Abundance in Photodissociation Regions  

E-Print Network (OSTI)

We have made one-dimensional raster-scan observations of the rho Oph and sigma Sco star-forming regions with two spectrometers (SWS and LWS) on board the ISO. In the rho Oph region, [SiII] 35um, [OI] 63um, 146um, [CII] 158um, and the H2 pure rotational transition lines S(0) to S(3) are detected, and the PDR properties are derived as the radiation field scaled by the solar neighborhood value G_0~30-500, the gas density n~250--2500 /cc, and the surface temperature T~100-400 K. The ratio of [SiII] 35um to [OI] 146um indicates that silicon of 10--20% of the solar abundance must be in the gaseous form in the photodissociation region (PDR), suggesting that efficient dust destruction is undergoing even in the PDR and that part of silicon atoms may be contained in volatile forms in dust grains. The [OI] 63um and [CII] 158um emissions are too weak relative to [OI] 146um to be accounted for by standard PDR models. We propose a simple model, in which overlapping PDR clouds along the line of sight absorb the [OI] 63um and [CII] 158um emissions, and show that the proposed model reproduces the observed line intensities fairly well. In the sigma Sco region, we have detected 3 fine-structure lines, [OI] 63um, [NII] 122um, and [CII] 158um, and derived that 30-80% of the [CII] emission comes from the ionized gas. The upper limit of the [SiII] 35um is compatible with the solar abundance relative to nitrogen and no useful constraint on the gaseous Si is obtained for the sigma Sco region.

Yoko Okada; Takashi Onaka; Takao Nakagawa; Hiroshi Shibai; Daigo Tomono; Yukari Y. Yui

2005-11-17T23:59:59.000Z

308

NREL: Process Development and Integration Laboratory - Silicon Cluster Tool  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Cluster Tool Capabilities Silicon Cluster Tool Capabilities Photo of a cylindrical metal chamber surrounded by numerous other smaller cylindrical or rectangular chambers. Each tool has several flanges and is typically held within a metal frame or rack. A computer is on a table in front of a cabinet of electronic equipment. Silicon cluster tool in the Process Development and Integration Laboratory. The Silicon cluster tool within the Process Development and Integration Laboratory is a 10-port cluster tool designed by the National Renewable Energy Laboratory (NREL) and manufactured by MVSystems. It handles standard 157-mm x 157-mm samples introduced into the central 10-6 torr vacuum chamber via a load lock. From there, a robotic arm moves samples from one chamber to another within the cluster tool. Contact Qi Wang for more

309

Phoenix Silicon International Corp Psi | Open Energy Information  

Open Energy Info (EERE)

Phoenix Silicon International Corp Psi Phoenix Silicon International Corp Psi Jump to: navigation, search Name Phoenix Silicon International Corp (Psi) Place Hsinchu, Taiwan Zip 300 Sector Solar Product Taiwan-based silicon recycler and manufacturer of wafers to the semiconductor and solar industries; also makes lithium-ion batteries. Coordinates 24.69389°, 121.148064° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":24.69389,"lon":121.148064,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

310

REC Silicon formerly ASiMI | Open Energy Information  

Open Energy Info (EERE)

Silicon formerly ASiMI Silicon formerly ASiMI Jump to: navigation, search Name REC Silicon (formerly ASiMI) Place Butte, Montana Zip 59750 Product Manufactures and sells polycrystalline silicon. Coordinates 47.838435°, -100.665669° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.838435,"lon":-100.665669,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

311

High-efficiency third-generation silicon solar cells  

Science Journals Connector (OSTI)

The results of investigating third-generation matrix silicon solar cells with an efficiency of more than 25% during conversion of concentrated solar radiation are given. Electrical and optical characteristics ......

D. S. Strebkov; V. I. Polyakov

2011-08-01T23:59:59.000Z

312

Hydrogenated amorphous silicon films prepared by glow discharge of disilane  

SciTech Connect

This report describes the results of an investigation of the properties of hydrogenated amorphous silicon films and the efficiency of amorphous silicon solar cells deposited from disilane at rates of 1.5 nanometers/second or greater. The study was divided into two parts, investigation of basic materials properties of hydrogenated amorphous silicon thin films and the fabrication of glass-P-I-N-metal solar cells. The thin film materials properties investigated included the dark conductivity, photoconductivity, dihydride/monohydride concentration ratio, activation energy, and mobility-lifetime product. Hydrogenated amorphous silicon solar cells were fabricated with an intrinsic layer which was deposited at 1.5 nanometers/second. The absolute and reverse bias quantum yields were measured and solar cell efficiencies of 5% were achieved. Attempts to increase the efficiency by reverse bias annealing are also reported. 7 refs., 27 figs.

Wiesmann, H.J. (UHT Corp., Dobbs Ferry, NY (USA))

1990-01-01T23:59:59.000Z

313

Efficient light-trapping nanostructures in thin silicon solar cells  

E-Print Network (OSTI)

We examine light-trapping in thin crystalline silicon periodic nanostructures for solar cell applications. Using group theory, we show that light-trapping can be improved over a broad band when structural mirror symmetry ...

Han, Sang Eon

314

Understanding Why Silicon Anodes of Lithium-Ion Batteries Are...  

NLE Websites -- All DOE Office Websites (Extended Search)

Understanding Why Silicon Anodes of Lithium-Ion Batteries Are Fast to Discharge but Slow to Charge December 02, 2014 Measured and calculated rate-performance of a Si thin-film (70...

315

Titanium-Catalyzed Silicon Nanostructures Grown by APCVD  

Science Journals Connector (OSTI)

We report on growth of Ti-catalyzed silicon nanostructures (SNCs) through atmospheric-pressure chemical vapor deposition. An extensive growth study relating the growth condition parameters, including the parti...

Mohammad A. U. Usman; Brady J. Smith; Justin B. Jackson

2014-11-01T23:59:59.000Z

316

Neutron Storage in a Longitudinally Vibrating Silicon Crystal  

Science Journals Connector (OSTI)

The storage of cold neutrons in a longitudinally vibrating silicon crystal is demonstrated by time-resolved transmission experiments on a high-resolution backscattering spectrometer. The experimental results are compared with Monte Carlo simulations.

Hock, R.

1998-04-01T23:59:59.000Z

317

Schmid Silicon Technology GmbH SST | Open Energy Information  

Open Energy Info (EERE)

to: navigation, search Name: Schmid Silicon Technology GmbH (SST) Place: Freudenstadt, Germany Zip: D-72250 Sector: Solar Product: Germany-based technology provider for high-end...

318

Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon  

E-Print Network (OSTI)

and investigate fundamental properties. Noble metal nanoparticles made of gold or silver are grown in cavities in monocrystalline silicon formed by helium ion implantation and high temperature annealing at depth greater than 500 nm from the surface. Metals...

Martin, Michael S.

2013-08-13T23:59:59.000Z

319

Rapid WolffKishner reductions in a silicon carbide microreactor  

E-Print Network (OSTI)

WolffKishner reductions are performed in a novel silicon carbide microreactor. Greatly reduced reaction times and safer operation are achieved, giving high yields without requiring a large excess of hydrazine. The corrosion ...

Newman, Stephen G.

2014-01-01T23:59:59.000Z

320

New Composite Silicon-Defect Graphene Anode Architecture  

NLE Websites -- All DOE Office Websites (Extended Search)

A New Composite Silicon-Defect Graphene Anode Architecture for High Capacity, High-Rate Li-ion Batteries Xin Zhao, Cary Hayner, Mayfair Kung, and Harold Kung, Northwestern...

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Spectroscopic ellipsometry characterization of thin-film silicon nitride  

SciTech Connect

We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

1997-05-01T23:59:59.000Z

322

Mass spectrometric study of NF3 plasma etching of silicon  

Science Journals Connector (OSTI)

NF3 plasma etching is used for dry cleaning of reactors after plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon from SiH4. The NF3 plasma chemistry, in a closed isothermal plasma box wit...

Jerome Perrin; Jacques Mot; Jean-Marie Sifert

1990-12-01T23:59:59.000Z

323

Fabrication and characterization of germanium-on-silicon photodiodes  

E-Print Network (OSTI)

Germanium is becoming an increasingly popular material to use in photonic systems. Due to its strong absorption in the near infrared and its relative ease of integration on silicon, it is a promising candidate for the ...

DiLello, Nicole Ann

2012-01-01T23:59:59.000Z

324

A low-leakage 3-way silicon microvalve  

E-Print Network (OSTI)

This thesis presents an electrostatically actuated silicon microvalve designed for use in a miniature gas chromatography system for sample preparation and injection. In contrast to prior art, this design combines an ...

Sihler, Joachim, 1971-

2004-01-01T23:59:59.000Z

325

Cryogenic optical testing of sandwich-type silicon carbide mirrors  

Science Journals Connector (OSTI)

The experimental cryogenic performance of 160-mm-diameter silicon carbide (SiC) mirrors, one of which, a 700-mm-diameter mirror, is to be used as a primary mirror of the Japanese...

Kaneda, Hidehiro; Onaka, Takashi; Kawada, Mitsunobu; Murakami, Hiroshi

2003-01-01T23:59:59.000Z

326

Study on electroluminescence from porous silicon light-emitting diode  

Science Journals Connector (OSTI)

Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a...

Yang, Yajun; Li, Qingshan; Liu, Xianyun

2006-01-01T23:59:59.000Z

327

Simulation of iron impurity gettering in crystalline silicon solar cells  

E-Print Network (OSTI)

This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

Powell, Douglas M. (Douglas Michael)

2012-01-01T23:59:59.000Z

328

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network (OSTI)

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

329

Heterojunction solar cells produced by porous silicon layer transfer technology  

Science Journals Connector (OSTI)

In this paper, we present the result of heterojunction solar cells based on porous silicon layer transfer technology. a-Si/c-Si structured solar cells were prepared in which the c-Si ... was investigated. The spe...

Zhihao Yue; Honglie Shen; Lei Zhang; Bin Liu; Chao Gao; Hongjie Lv

2012-09-01T23:59:59.000Z

330

A High Efficiency Silicon Solar Cell Production Technology  

Science Journals Connector (OSTI)

BP Solar have developed a cost-effective production technology for the manufacture of high efficiency laser grooved buried grid (LGBG) crystalline silicon solar cells. The process has demonstrated 1718% ... a ne...

N. B. Mason; D. Jordan; J. G. Summers

1991-01-01T23:59:59.000Z

331

Advanced cost-effective crystalline silicon solar cell technologies  

Science Journals Connector (OSTI)

An overview is given concerning current industrial technologies, near future improvements and medium-term developments in the field of industrially viable crystalline silicon terrestrial solar cell fabrication (without concentration).

J.F Nijs; J Szlufcik; J Poortmans; S Sivoththaman; R.P Mertens

2001-01-01T23:59:59.000Z

332

Indium oxide/n-silicon heterojunction solar cells  

DOE Patents (OSTI)

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1982-12-28T23:59:59.000Z

333

Silicone rubber membrane bioreactors for bacterial cellulose production  

Science Journals Connector (OSTI)

Cellulose production byAcetobacter pasteurianus...was investigated in static culture using four bioreactors with silicone rubber membrane submerged in the medium. The shape ... , flat sack, tube and cylindrical b...

Masayuki Onodera; Ikuro Harashima; Kiyoshi Toda

2002-10-01T23:59:59.000Z

334

Athermal photonic devices and circuits on a silicon platform  

E-Print Network (OSTI)

In recent years, silicon based optical interconnects has been pursued as an eective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and ...

Raghunathan, Vivek

2013-01-01T23:59:59.000Z

335

Supporting Information: Holey Silicon as efficient thermoelectric material  

E-Print Network (OSTI)

Supporting Information: Holey Silicon as efficient thermoelectric material Jinyao Tang1, 3, 3 1 Department of Chemistry, 2 Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA. 3 Materials Sciences Division, Lawrence Berkeley National

Yang, Peidong

336

Temperature Dependence of the EUV Responsivity of Silicon Photodiodes  

SciTech Connect

Responsivity of silicon photodiodes was measured from -100 C to +50 C in the 3 to 250 nm wavelength range using synchrotron and laboratory radiation sources. Two types of silicon photodiodes were studied, the AXUV series having a thin nitrided silicon dioxide surface layer and the SXUV series having a thin metal silicide surface layer. Depending on the wavelength, the responsivity increases with temperature with the rates 0.013%/C to 0.053%/C for the AXUV photodiode and 0.020%/C to 0.084%/C for the SXUV photodiode. The increase in responsivity is consistent with the decrease in the silicon bandgap energy which causes a decrease in the pair creation energy. These results are particularly important for dose measurement in extreme ultraviolet (EUV) lithography steppers and sources since the detector temperature often increases because of the high EUV intensities involved.

Kjornrattanawanich,B.; Korde, R.; Boyer, C.; Holland, G.; Seely, J.

2006-01-01T23:59:59.000Z

337

Micro-cleaved ridge lasers for optoelectronic integration on silicon  

E-Print Network (OSTI)

This thesis addresses one of the last hurdles to optoelectronic integration on silicon, namely the incorporation of room-temperature, electrically-pumped edge-emitting laser diodes. To this end, thin (-6 pm) InP-based ...

Rumpler, Joseph John, 1976-

2008-01-01T23:59:59.000Z

338

Anti-reflective nanoporous silicon for efficient hydrogen production  

DOE Patents (OSTI)

Exemplary embodiments are disclosed of anti-reflective nanoporous silicon for efficient hydrogen production by photoelectrolysis of water. A nanoporous black Si is disclosed as an efficient photocathode for H.sub.2 production from water splitting half-reaction.

Oh, Jihun; Branz, Howard M

2014-05-20T23:59:59.000Z

339

Carbon monoxide-silicon carbide interaction in HTGR fuel particles  

Science Journals Connector (OSTI)

The corrosion of the coating-layers of silicon carbide (SiC) by carbon monoxide (CO) was observed in irradiated Triso-coated uranium dioxide particles, used in high-temperature gas-cooled reactors, by optical ...

Kazuo Minato; Toru Ogawa; Satoru Kashimura; Kousaku Fukuda

1991-05-01T23:59:59.000Z

340

Process and apparatus for casting multiple silicon wafer articles  

DOE Patents (OSTI)

Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

Nanis, Leonard (Palo Alto, CA)

1992-05-05T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents (OSTI)

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20T23:59:59.000Z

342

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents (OSTI)

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

343

Temperature dependence of ambipolar diffusion in silicon-on-insulator  

E-Print Network (OSTI)

Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a ...

Zhao, Hui

2008-03-01T23:59:59.000Z

344

Hydrogen, Oxygen and Silicon Isotope Systematics in Lunar Material  

Science Journals Connector (OSTI)

31 March 1977 research-article Hydrogen, Oxygen and Silicon Isotope Systematics...are supported: (1) The bulk of the hydrogen in the lunar soils represents protons...samples of relatively detuerium rich hydrogen are found, probably resulting from in...

1977-01-01T23:59:59.000Z

345

Silicon-based sleeve devices for chemical reactions  

DOE Patents (OSTI)

A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Northrup, M. Allen (Berkeley, CA); Mariella, Jr., Raymond P. (Danville, CA); Carrano, Anthony V. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

1996-01-01T23:59:59.000Z

346

Crystalline Silicon under Acoustic Cavitation: From Mechanoluminescence to Amorphization  

Science Journals Connector (OSTI)

The physicochemical behavior of crystalline silicon under acoustic cavitation is investigated in water sparged with argon at low temperature (10 and 20 C). Surprisingly, spectroscopic investigations reveal that argon (bubbling continuously through the ...

Matthieu Virot; Rachel Pflieger; Ekaterina V. Skorb; Johann Ravaux; Thomas Zemb; Helmuth Mhwald

2012-06-21T23:59:59.000Z

347

Potential applications of a toughened silicon-based alloy  

E-Print Network (OSTI)

Silicon has long been used as an alloying element in various metal alloys, in engineered ceramics, and in the semiconductor industry. However, due to its intrinsic low fracture toughness, it is generally perceived as a ...

Lei, Wang S

2008-01-01T23:59:59.000Z

348

Low temperature thermal transport in partially perforated silicon nitride membranes.  

SciTech Connect

The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted of Mo/Au TESs lithographically defined on silicon nitride membranes 1 {micro}m thick and 6 mm{sup 2} in size. Trenches with variable depth were incorporated between the TES and the silicon frame in order to manage the thermal transport. It was shown that sharp features in the membrane surface, such as trenches, significantly impede the modes of phonon transport. A nonlinear dependence of thermal resistance on trench depth was observed. Partial perforation of silicon nitride membranes to control thermal transport could be useful in fabricating mechanically robust detector devices.

Yefremenko, V.; Wang, G.; Novosad, V.; Datesman, A.; Pearson, J.; Divan, R.; Chang, C. L.; Downes, T. P.; Mcmahon, J. J.; Bleem, L. E.; Crites, A. T.; Meyer, S. S.; Carlstrom, J. E.; Univ. of Chicago

2009-05-04T23:59:59.000Z

349

Temperature dependency of MOSFET device characteristics in 4H-and 6H-silicon carbide (SiC)  

E-Print Network (OSTI)

Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC) Md was arranged by Prof. A. Iliadis Abstract The advantages of silicon carbide (SiC) over silicon are significant; Silicon carbide; Temperature variation effect 1. Introduction Silicon carbide, a wide bandgap material

Tolbert, Leon M.

350

Synthesis of silicon nanotubes by DC arc plasma method  

SciTech Connect

Plasma synthesis is a novel technique of synthesis of nanomaterials as they provide high rate of production and promote metastable reactions. Very thin walled silicon nanotubes were synthesized in a DC direct arc thermal plasma reactor. The effect of parameters of synthesis i.e. arc current and presence of hydrogen on the morphology of Si nanoparticles is reported. Silicon nanotubes were characterized by Transmission Electron Microscopy (TEM), Local Energy Dispersive X-ray analysis (EDAX), and Scanning Tunneling Microscopy (STM).

Tank, C. M.; Bhoraskar, S. V.; Mathe, V. L. [Department of Physics, University of Pune, Pune-7, Maharashtra (India)

2012-06-05T23:59:59.000Z

351

Photonic Crystal Cavities in Cubic Polytype Silicon Carbide Films  

E-Print Network (OSTI)

We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1250 - 1600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

Radulaski, Marina; Buckley, Sonia; Rundquist, Armand; Provine, J; Alassaad, Kassem; Ferro, Gabriel; Vu?kovi?, Jelena

2013-01-01T23:59:59.000Z

352

Two dimensional properties of methane adsorbed on porous silicon  

E-Print Network (OSTI)

TWO DIMENSIONAL PROPERTIES OF METHANE ADSORBED ON POROUS SILICON A Thesis by RICHARD FRANKLIN TENNIS Submitted to the Office of Graduate Studies of Texas ASM University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE May 1989 Major Subject: Physics TWO DIMENSIONAL PROPERTIES OF METHANE ADSORBED ON POROUS SILICON A Thesis by RICHARD FRANKLIN TENNIS Approved as to style and content by: P. Kirk (C ir of Committee) Glenn olet (M er) Da J. Ernst...

Tennis, Richard Franklin

2012-06-07T23:59:59.000Z

353

Nuclear magnetic resonance study of methane adsorbed on porous silicon  

E-Print Network (OSTI)

NUCLEAR MAGNETIC RESONANCE STUDY OF METHANE ADSORBED ON POROUS SILICON A Thesis by FENG I I Submitted to the Office of Graduate Studies of Texas ARM University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE... May 1992 Major Subject: Physics NUCLEAR MAGNETIC RESONANCE STUDY OF METHANE ADSORBED ON POROUS SILICON A Thesis by FENG LI Approved as to style and content by: . P. Kirk (Chair of Committee) i G. Agnolet (Member) J. H. Ross, r (Member) M...

Li, Feng

2012-06-07T23:59:59.000Z

354

NANO EXPRESS Open Access Characterization of silicon heterojunctions for  

E-Print Network (OSTI)

at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c

Paris-Sud XI, Université de

355

Structure and photoelectrochemical properties of silicon microstructures arrays  

Science Journals Connector (OSTI)

Abstract Two silicon microstructrues of silicon nanowires (SiNWs) and silicon microchannel plates (Si MCP) have been successfully fabricated combined by standard microelectronics technology and electrochemical method. The performances have been investigated for dye-sensitized solar cells (DSSCs) by applying silicon nanowires (SiNWs) and silicon microchannel plates (Si MCP) to the counter electrode, respectively. And the electrocatalytic activities of Si MCP and SiNWs electrodes for triiodide reduction were studied using electrochemical impedance spectroscopy. The two microstructure electrodes consisting of a large number of channels with high surface to volume ratio exhibits a highly interconnected network structure with good catalytic activity. A high photovolatic conversion efficiency of over 7.01% and 7.86% were recorded for \\{DSSCs\\} based on the Si MCP and SiNWs counter electrodes, which is comparatable to the cell based on conventional Pt counter electrode at the same condition. It could be expected that this low cost SiNWs and Si MCP and compatibility with microelectronic technology would make the silicon-based monolithic DSSC available in practical application.

Bairui Tao; Fengjuan Miao; Junhao Chu

2013-01-01T23:59:59.000Z

356

Solar grade silicon: Technology status and industrial trends  

Science Journals Connector (OSTI)

Abstract Crystalline silicon remains (all variants included) the dominant technology to manufacture solar cells. Currently (20122013) more than 90% of all solar cells produced are based on this vast group of technologies. The availability, the cost and the quality to the silicon feedstock is therefore a strategic issue of paramount importance for the entire photovoltaic sector. The silicon demand/supply balance has evolved from a situation of shortage with rocketing sales prices, in the years 20052008, to currently (20122013) an oversupply situation with record low price level for virgin polysilicon. Between these two extreme periods, production capacity has been multiplied by a factor of nearly 10. A better understanding of the prevailing dynamics in the polysilicon/silicon industry is needed in order for all players in the solar cell industry to make proper planning. In light of the past developments as well as the constraints imposed by a sound competition, the present article reviews the market trends for solar grade silicon including capacity, supply, demand and price. Furthermore, the article reviews the competing commercial technologies i.e. Siemens polysilicon, fluidized bed reactor/FBR polysilicon and upgraded metallurgical/UMG silicon and compares them in terms of maturity, improvement potential, product morphology, purity, applications and cost (actual vs. potential).

Gran Bye; Bruno Ceccaroli

2014-01-01T23:59:59.000Z

357

Method for forming silicon on a glass substrate  

DOE Patents (OSTI)

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

McCarthy, A.M.

1995-03-07T23:59:59.000Z

358

Microcrystalline silicon germanium: An attractive bottom-cell material for thin-film silicon-based tandem-solar-cells  

SciTech Connect

The authors have prepared hydrogenated microcrystalline silicon germanium by plasma enhanced CVD of a mixture of silane and germane gas diluted with hydrogen. The growth conditions have been systematically controlled to obtain large ({approximately}400{angstrom}) crystallites of silicon-germanium as observed using Raman scattering and x-ray diffraction. The dangling bond (germanium) density has been reduced to <5 x 10{sup 16} cm{sup {minus}3} at low substrate temperatures ({approximately}150 C). The optical absorption spectra of the 50% Ge containing material is red-shifted compared to microcrystalline silicon, consistent with a reduction of the indirect optical gap to 0.9 eV. Schottky type cells fabricated using Au on an n{sup +} crystalline silicon substrate confirm that the long wavelength response is remarkably enhanced in this material.

Ganguly, Gautam; Ikeda, Toru; Kajiwara, Kei; Matduda, Akihisa

1997-07-01T23:59:59.000Z

359

Advanced polycrystalline silicon thin film solar cells using high rate plasma enhanced chemical vapour deposited amorphous silicon on textured glass.  

E-Print Network (OSTI)

??Solid phase crystallized polycrystalline silicon (poly-Si) thin-film solar cell on glass is an emerging Photovoltaics (PV) technology combining the robustness of crystalline Si material with (more)

Jin, Guangyao

2010-01-01T23:59:59.000Z

360

Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas  

DOE Patents (OSTI)

A method is described for producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament. 7 figs.

Mahan, A.H.; Molenbroek, E.C.; Nelson, B.P.

1998-07-07T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Silicon Valley Biodiesel Inc | Open Energy Information  

Open Energy Info (EERE)

Biodiesel Inc Biodiesel Inc Jump to: navigation, search Name Silicon Valley Biodiesel Inc. Place Sunnyvale, California Zip CA 94086 Product Manufactures biodiesel for the local diesel fuel market using local supplies of waste fats, oils and greases that is converted into fatty acid methyl esters and has properties similar to diesel fuel. Coordinates 32.780338°, -96.547405° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.780338,"lon":-96.547405,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

362

Reactive sticking coefficients of silane on silicon  

SciTech Connect

We have investigated the reaction of room-temperature silane and disilane on a hot polycrystalline silicon surface using both a collision-free molecular beam and a very low pressure CVD cell. Reactive sticking coefficients were obtained from deposition rate data over a wide range of temperatures and silane (disilane) fluxes. The RSCs are substantially less than one, ranging from 6 x 10/sup -5/ to 4 x 10/sup -2/. For silane we observed curved Arrhenius plots with slopes decreasing from approx.60 kcal mol/sup -1/ at low temperatures to approx.2 kcal mol/sup -1/ at higher temperatures. The RSCs are independent of flux (pressure) at 1040/sup 0/C, but vary as flux to the approx.-1/2 power at 710/sup 0/C. A model comprised of a dissociative adsorption mechanism with competing associative desorption and reaction was found to give reasonable agreement. For disilane, we observed RSCs that were roughly ten times higher than those for silane. We also observed a curved Arrhenius plot and a flux dependence at 710/sup 0/C for disilane. 22 refs., 5 figs.

Buss, R.J.; Ho, P.; Breiland, W.G.; Coltrin, M.E.

1987-01-01T23:59:59.000Z

363

Selective deposition of silicon and silicon-germanium alloys by rapid thermal chemical vapor deposition  

SciTech Connect

Selective deposition of SiGe alloys by rapid thermal deposition has been studied using a commercially available Rapid Thermal Chemical Vapor Deposition (RTCVD) cluster tool. The precursors used in this work were dichlorosilane and germane diluted in either hydrogen or argon. An initial characterization was performed to find the appropriate temperature and GeH{sub 4} flow ranges to deposit epitaxial layers with low surface roughness. For layers with higher germanium concentration lower deposition temperatures are required to minimize surface roughness. The effects of the dilutant gas on the deposition were examined. An H{sub 2} dilutant affects the deposition by consuming chlorine released by the SiCl{sub 2}H{sub 2} and forming HCl. When Ar is used as the dilutant, more chlorine is available for other reactions that can result in etching of the silicon surface. Finally, the effects of pre-deposition treatment were determined. When compared to a wet HF dip, a gas/vapor phase HF/methanol native oxide removal treatment appears to increase the initiation time for the epitaxial deposition reaction. This is most likely due to increased fluorine termination of the surface. When a wet HF or HF/methanol native oxide removal is followed by a UV-Cl{sub 2} process, the deposition reaction initiation time is reduced. The UV-Cl{sub 2} process was also found to etch silicon through the native oxide.

Grant, J.M.; Ang, M.; Allen, L.R. [Sharp Microelectronics Technology, Inc., Camas, WA (United States)

1996-12-01T23:59:59.000Z

364

Silicon nucleation and film evolution on silicon dioxide using disilane: Rapid thermal chemical vapor deposition of very smooth silicon at high deposition rates  

SciTech Connect

An investigation of Si{sub 2}H{sub 6} and H{sub 2} for rapid thermal chemical vapor deposition (RTCVD) of silicon on SiO{sub 2} has been performed at temperatures ranging from 590 to 900 C and pressures ranging from 0.1 to 1.5 Torr. Deposition at 590 C yields amorphous silicon films with the corresponding ultrasmooth surface with a deposition rate of 68 nm/min. Cross-sectional transmission electron microscopy of a sample deposited at 625 C and 1 Torr reveals a bilayer structure which is amorphous at the growth surface and crystallized at the oxide interface. Higher temperatures yield polycrystalline films where the surface roughness depends strongly on both deposition pressure and temperature. Silane-based amorphous silicon deposition in conventional systems yields the expected ultrasmooth surfaces, but at greatly reduced deposition rates unsuitable for single-wafer processing. However, disilane, over the process window considered here, yields growth rates high enough to be appropriate for single-wafer manufacturing, thus providing a viable means for deposition of very smooth silicon films on SiO{sub 2} in a single-wafer environment.

Violette, K.E.; Oeztuerk, M.C.; Christensen, K.N.; Maher, D.M. [North Carolina State Univ., Raleigh, NC (United States)

1996-02-01T23:59:59.000Z

365

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon metal and alloys (excluding semiconductor-grade silicon)  

E-Print Network (OSTI)

%; China, 16%; South Africa, 13%; Canada, 12%; and other, 39%. Tariff: Item Number Normal Trade Relations metal: Brazil, 37%; South Africa, 25%; Canada, 14%; Norway, 6%; and other, 18%. Total: Brazil, 20 energy costs. Demand for silicon metal comes primarily from the aluminum and chemical industries

366

Reaction studies of hot silicon, germanium and carbon atoms  

SciTech Connect

The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs.

Gaspar, P.P.

1990-11-01T23:59:59.000Z

367

CDF Run IIb silicon: Stave design and testing  

SciTech Connect

The CDF Silicon Vertex Detectors (SVX) have been shown to be excellent tools for heavy flavor physics, with the secondary vertex detection and good vertex resolution.The CDF RunIIb Silicon Vertex Detector (SVXIIb) was designed to be a radiation tolerant replacement for the current SVXII which was not anticipated to survive the projected Run II luminosity dose. The outer five layers use identical structural elements, called staves, to support six silicon sensors on each side. The stave is composed of carbon fiber skins on a foam core with a built-in cooling tube. Copper on Kapton bus cable carriers power and data/control signals underneath three silicon modules on each side of the stave. A Hybrid equipped with four new SVX4 chips are used to readout two silicon sensors on each module which can be readout and tested independently. This new design concept leads to a very compact mechanical and electrical detecting unit, allowing streamline production and ease of testing and installation. A description of the design and mechanical performance of the stave is given. They also present here results on the electrical performance obtained using prototype staves as well as results with the first pre-production parts.

Rong-Shyang Lu

2003-11-07T23:59:59.000Z

368

Solar EnerTech PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV | Open Energy  

Open Energy Info (EERE)

PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV Jump to: navigation, search Name Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV Place Inner Mongolia Autonomous Region, China Sector Solar Product A solar silicon processing joint venture between Solar EnerTech, PAIS, Jin Yu Silicon, and the Wuhai Municipal Government was formed. References Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV is a company located in Inner Mongolia Autonomous Region, China . References ↑ "[ Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal

369

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs November 2, 2010 - 2:00pm Addthis REC Silicon received a $154 million 48C tax credit for a $1.7 billion expansion of its Moses Lake, WA, plant. | Photo courtesy of REC Silicon | REC Silicon received a $154 million 48C tax credit for a $1.7 billion expansion of its Moses Lake, WA, plant. | Photo courtesy of REC Silicon | Stephen Graff Former Writer & editor for Energy Empowers, EERE In most industries, if it's expensive to make, it's probably expensive to buy. This is particularly evident in the solar world. Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more expensive than other energy sources.

370

Specificity of mono- and disilane decomposition at silicon surface under conditions of epitaxial growth  

Science Journals Connector (OSTI)

Basic kinetic parameters of surface hydrogen desorption and of adsorbed silicon hydrides decomposition has been evaluated by kinetic simulation based on data of the technological experiments on silicon layer g...

L. K. Orlov; N. L. Ivina; T. N. Smyslova

2013-12-01T23:59:59.000Z

371

Silicon incorporation in InP during LP-MOCVD using disilane  

Science Journals Connector (OSTI)

Silicon doped epitaxial layers of InP have been prepared by low pressure metalorganic chemical vapour deposition, using disilane as the source of silicon. Trimethylindium and...16?2 1019 cm?3.... The results in...

C. Blaauw; F. R. Shepherd; C. J. Miner

372

Fabrication and Performance of Silicon-Embedded Permanent-Magnet Microgenerators  

E-Print Network (OSTI)

This paper focuses on the design, fabrication, and characterization of silicon-packaged permanent-magnet (PM) microgenerators. The use of silicon packaging favors fine control on shape and dimensions in batch fabrication ...

Herrault, Florian

373

Modeling and control of a silicon substrate heater for carbon nanotube growth experiments  

E-Print Network (OSTI)

The precision engineering research group at MIT is working on carbon nanotube growth experiments on silicon substrates and in microfabricated silicon devices, to try to produce improved bulk nanotube growth. For this thesis, ...

Held, David (David A.)

2005-01-01T23:59:59.000Z

374

Surface modification of silicon by laser surface treatment: Improvement of adhesion and copper deposition  

Science Journals Connector (OSTI)

We have studied the use of lasers for modifying the surface properties of silicon to improve its wettability ... the wettability and adhesion characteristics of the silicon surfaces have been enhanced by laser ir...

Cheon Lee; Dong-Yong Kim; Jae-Hong Kim; Kyoung-Cheol Lee

2005-01-01T23:59:59.000Z

375

Luminescent, quantum dot-based anti-reflective coatings for crystalline silicon photovoltaics  

E-Print Network (OSTI)

This thesis demonstrates and evaluates the potential application of luminescent quantum dot/polymer solutions on crystalline silicon photovoltaics. After spin coating the QD/polymer onto silicon photodiodes, an increase ...

Bruer, Garrett (Garrett A.)

2010-01-01T23:59:59.000Z

376

Femtosecond-laser irradiation as a platform for tailoring the optoelectronic properties of silicon  

E-Print Network (OSTI)

Silicon is the most abundant semiconductor on earth and benefits from decades of technological development driven by the integrated circuit industry. Furthermore, silicon allows for facile n-type and p-type doping, has a ...

Smith, Matthew John, Ph. D. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

377

Interaction between process technology and material quality during the processing of multicrystalline silicon solar cells  

Science Journals Connector (OSTI)

Multicrystalline silicon is the most used material for the production of silicon solar cells. The quality of the as grown material depends on the quality of the feedstock and the crystallization process. Bulk ...

Dietmar Borchert; Markus Rinio

2009-01-01T23:59:59.000Z

378

Vertically integrated double-layer on-chip silicon membranes for 1-to-12 waveguide fanouts  

E-Print Network (OSTI)

with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction Appl. Phys. Lett. 100 metal- oxide-semiconductor (CMOS) compatible silicon photonics, which allows for integration of optical

Chen, Ray

379

The fabrication of high quality silicon junction detectors by low energy ion implantation  

Science Journals Connector (OSTI)

High quality silicon junction detectors have been made by implantation of boron and phosphorus ions into silicon wafers. Resolutions of 20 keV for Po ?-particles were obtained.

S. Kalbitzer; R. Bader; H. Herzer; K. Bethge

1967-01-01T23:59:59.000Z

380

Single-crystalline silicon lift-off films for metaloxidesemiconductor devices on arbitrary substrates  

E-Print Network (OSTI)

foils using plasma- enhanced chemical-vapor deposition CVD of hydrogen- passivated, amorphous silicon (a-Si:HGaAs/GaAs heterojunction bipolar transistors on silicon,10 and high electron mobility transistors on quartz and sapphire11

Ludwig-Maximilians-Universität, München

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-  

E-Print Network (OSTI)

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon

Pilon, Laurent

382

Synthesis of Silicon Analogues of Acyclonucleotides Incorporable in Oligonucleotide Solid-Phase Synthesis  

Science Journals Connector (OSTI)

The synthesis of the four silicon analogues of acyclonucleosides was described. In every case, the silicon atom was introduced onto an allyl group on the natural nucleobase following a hydrosilylation reaction. Diols obtained were protected as 4,4-...

Jacques Thibon; Laurent Latxague; Grard Dlris

1997-07-11T23:59:59.000Z

383

Nested potassium hydroxide etching and protective coatings for silicon-based microreactors  

E-Print Network (OSTI)

We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride ...

de Mas, Nuria

384

Characterization of temperature profile in furnace and solubility of iron in silicon  

E-Print Network (OSTI)

A better understanding of the behavior of impurities, such as iron, in silicon can lead to increases in solar cell efficiency. The purpose of this thesis was to study the behavior of iron in silicon via three sub-tasks: ...

Modi, Vrajesh Y

2011-01-01T23:59:59.000Z

385

E-Print Network 3.0 - atlas silicon tracker Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

system, based on double-sided silicon strip dectectors... of the pion tracker for HADES The pion tracker is a new detector component for the High Acceptance Di... . Silicon...

386

Silicon bulk micromachined hybrid dimensional artifact.  

SciTech Connect

A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

2010-03-01T23:59:59.000Z

387

WA_00_010_ROCKWELL_SCIENCE_CENTER_A_Subcontractor_of_SILICON...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

NTERASubcontractorofSILICON.pdf More Documents & Publications WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverof...

388

Japan Solar Silicon Co Ltd JSS | Open Energy Information  

Open Energy Info (EERE)

Japan Solar Silicon Co Ltd JSS Japan Solar Silicon Co Ltd JSS Jump to: navigation, search Name Japan Solar Silicon Co Ltd (JSS) Place Tokyo, Japan Sector Solar Product A JV company between Chisso, Nippon Mining Holdings, and Toho Titanium, to manufacture and retail solar-grade polysilicon. Coordinates 35.670479°, 139.740921° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":35.670479,"lon":139.740921,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

389

Direct-Write of Silicon and Germanium Nanostructures  

NLE Websites -- All DOE Office Websites (Extended Search)

Direct-Write of Silicon and Germanium Nanostructures Print Direct-Write of Silicon and Germanium Nanostructures Print Nanostructured materials (nanowires, nanotubes, nanoclusters, graphene) are attractive possible alternatives to traditionally microfabricated silicon in continuing the miniaturization trend in the electronics industry. To go from nanomaterials to electronics, however, the precise one-by-one assembly of billions of nanoelements into a functioning circuit is required-clearly not a simple task. An interdisciplinary team from the University of Washington, in collaboration with the ALS and the Pacific Northwest National Laboratory, has devised a strategy that could make this task a little easier. They have demonstrated the ability to directly "write" nanostructures of Si, Ge, and SiGe with deterministic size, geometry, and placement control. As purity is essential for electronic-grade semiconductors, the resulting patterns were carefully evaluated for carbon contamination using photoemission electron microscopes at ALS Beamlines 7.3.1 and 11.0.1.

390

Buckeye Silicon BeSi | Open Energy Information  

Open Energy Info (EERE)

Silicon BeSi Silicon BeSi Jump to: navigation, search Name Buckeye Silicon (BeSi) Place Toledo, Ohio Product Ohio-based polysilicon startup focusing on modular production. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

391

Silicon Valley Power - Solar Electric Buy Down Program | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar Electric Buy Down Program Solar Electric Buy Down Program Silicon Valley Power - Solar Electric Buy Down Program < Back Eligibility Commercial Residential Savings Category Solar Buying & Making Electricity Maximum Rebate Residential: $20,000 Program Info State California Program Type Utility Rebate Program Rebate Amount Incentives step down over time as installed capacity goals are met. Check program web site for current incentive level. '''Rebate levels as of 9/20/12:''' Residential: $2.00/watt AC Commercial (up to 100 kW): $1.10/watt AC Commercial (>100 kW to 1 MW): $0.15/kWh for 5 years Provider Silicon Valley Power Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as certain installed

392

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar cells. With a suite of x-ray microprobe techniques, a multi-institutional collaboration led by researchers from the University of California, Berkeley, and Berkeley Lab studied the distribution of metal clusters in a variety of multicrystalline solar cells before and after processing. Their discovery that the size, spatial distribution, and chemical binding of metals within clusters is just as important as the total metal concentration in limiting the performance of multicrystalline silicon solar cells led to the concept of defect engineering by optimizing growth and processing sequences to trap metals in their least harmful state.

393

GSMSolar formerly Shanghai General Silicon Material Co Ltd | Open Energy  

Open Energy Info (EERE)

GSMSolar formerly Shanghai General Silicon Material Co Ltd GSMSolar formerly Shanghai General Silicon Material Co Ltd Jump to: navigation, search Name GSMSolar (formerly Shanghai General Silicon Material Co Ltd) Place Kunshan, Jiangsu Province, China Zip 215300 Sector Solar Product Chinese solar ingot and wafer manufacturer. Coordinates 31.375509°, 120.949219° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.375509,"lon":120.949219,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

394

Silicon Valley Power - Residential Energy Efficiency Rebate Program |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Residential Energy Efficiency Rebate Program Residential Energy Efficiency Rebate Program Silicon Valley Power - Residential Energy Efficiency Rebate Program < Back Eligibility Residential Savings Category Home Weatherization Commercial Weatherization Heating & Cooling Cooling Appliances & Electronics Commercial Lighting Lighting Water Heating Commercial Heating & Cooling Program Info State California Program Type Utility Rebate Program Rebate Amount Attic Insulation: $175 Ceiling Fan: $35 each Heat Pump Water Heater: up to $1,000 LED Bulbs: $15/bulb installed Pool Pump: $200 Refrigerator: $50 Refrigerator recycling: $35 Room AC: $25 Room AC Recycling: $25 Solar Attic Fan: $100 Whole House Fan: $200 Provider Silicon Valley Power Silicon Valley Power offers rebates to residential customers for the purchase of a variety of energy efficient products including:

395

Distribution of radiative crystal imperfections through a silicon ingot  

SciTech Connect

Crystal imperfections limit the efficiency of multicrystalline silicon solar cells. Recombination through traps is more prominent in areas with high density of crystal imperfections. A method to visualize the distribution of radiative emission from Shockley Read Hall recombination in silicon is demonstrated. We use hyperspectral photoluminescence, a fast non-destructive method, to image radiatively active recombination processes on a set of 50 wafers through a silicon block. The defect related emission lines D1 and D2 may be detected together or alone. The D3 and D4 seem to be correlated if we assume that an emission at the similar energy as D3 (VID3) is caused by a separate mechanism. The content of interstitial iron (Fe{sub i}) correlates with D4. This method yields a spectral map of the inter band gap transitions, which opens up for a new way to characterize mechanisms related to loss of efficiency for solar cells processed from the block.

Fl, A., E-mail: andreas.flo@umb.no; Burud, I.; Kvaal, K.; Olsen, E. [Norwegian University of Life Sciences, Dept. Mathematical Sciences and Technology, P.O. Box 5003, 1432 s (Norway)] [Norwegian University of Life Sciences, Dept. Mathematical Sciences and Technology, P.O. Box 5003, 1432 s (Norway); Snden, R. [Institute for Energy Technology, Department of Solar Energy, P.O. Box 40, 2027 Kjeller (Norway)] [Institute for Energy Technology, Department of Solar Energy, P.O. Box 40, 2027 Kjeller (Norway)

2013-11-15T23:59:59.000Z

396

Protective coating for alumina-silicon carbide whisker composites  

DOE Patents (OSTI)

Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

Tiegs, Terry N. (Lenoir City, TN)

1989-01-01T23:59:59.000Z

397

Deposition of device quality low H content, amorphous silicon films  

DOE Patents (OSTI)

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

1995-03-14T23:59:59.000Z

398

Preparation of silicon carbide film by a plasma focus device  

Science Journals Connector (OSTI)

Silicon carbide (SiC) films were grown on the silicon (100) substrate by a 20 kJ Mather-type dense plasma focus device. The preparation method and characterization data are presented. X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (SEM) and nano-indentor were employed for the characterization of the samples obtained at different axial position of 50 mm, 90 mm, 130 mm and 170 mm, respectively. Polycrystalline 3CSiC were obtained at the position of 90 mm and 130 mm from XRD and FTIR spectra. SEM image showed that the silicon carbide films obtained at the position of 90 mm are porous on surface layer. Nano-indentor indicates that the film obtained at the position of 130 mm has the highest mechanical hardness.

Z.P. Wang; H.R. Yousefi; Y. Nishino; H. Ito; K. Masugata

2008-01-01T23:59:59.000Z

399

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar cells. With a suite of x-ray microprobe techniques, a multi-institutional collaboration led by researchers from the University of California, Berkeley, and Berkeley Lab studied the distribution of metal clusters in a variety of multicrystalline solar cells before and after processing. Their discovery that the size, spatial distribution, and chemical binding of metals within clusters is just as important as the total metal concentration in limiting the performance of multicrystalline silicon solar cells led to the concept of defect engineering by optimizing growth and processing sequences to trap metals in their least harmful state.

400

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 30, NO. 1, JANUARY 1, 2012 1 Integrated Hybrid Silicon Transmitter  

E-Print Network (OSTI)

the III-V and silicon can be completely transferred to the silicon wave- guide enabling integration for wave-guiding and III-V for optical gain/absorption, the design space for the hybrid platform differsJOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 30, NO. 1, JANUARY 1, 2012 1 Integrated Hybrid Silicon

Bowers, John

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical vapor deposition  

E-Print Network (OSTI)

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical February 2005 Available online 7 April 2005 Abstract The presence of thin silicon carbide intermediate of carbon atoms into the silicon carbide layer and the morphology and orientation of the diamond film

Dandy, David

402

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET)  

E-Print Network (OSTI)

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P- type 4H Silicon-Carbide 13,41, a wide, Silicon Carbide, Field effect transistor, Simulation. I. INTRODUCTION TH E BMFET operates in bipolar mode

Kumar, M. Jagadesh

403

In vitro cellular responses to silicon carbide nanoparticles: impact of physico-chemical  

E-Print Network (OSTI)

1 In vitro cellular responses to silicon carbide nanoparticles: impact of physico-chemical features of Nanoparticle Research 14, 10 (2012) 1143" DOI : 10.1007/s11051-012-1143-7 #12;2 Abstract Silicon carbide, and of the oxidation state of the surface on cellular H2O2 production. Keywords silicon carbide nanoparticles, laser

Paris-Sud XI, Université de

404

DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE  

E-Print Network (OSTI)

DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE (DIMOS) transistor structure in 4H-Silicon Carbide (SiC) is presented. Simulation for transport Silicon carbide (SiC), a wide bandgap material, shows a tremendous potential for high temperature

Tolbert, Leon M.

405

Boron Carbide and Silicon Oxide Hetero-nanonecklaces via Temperature Modulation  

E-Print Network (OSTI)

Boron Carbide and Silicon Oxide Hetero-nanonecklaces via Temperature Modulation Jifa Tian, Xingjun ReceiVed April 23, 2008 ABSTRACT: Boron carbide and silicon oxide (BCSiO) hetero-nanonecklaces have been-500 nm silicon oxide nanoballs onto 20-30 nm boron carbide nanowires. Synthetic analysis shows that a two

Gao, Hongjun

406

Silicon Carbide Power Device Characterization for HEVs Burak Ozpineci1,3  

E-Print Network (OSTI)

Silicon Carbide Power Device Characterization for HEVs Burak Ozpineci1,3 burak@ieee.org Leon M: The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features material. Another material, silicon carbide (SiC), with superior properties compared with Si, is a good

Tolbert, Leon M.

407

Benefits of Silicon Carbide Schottky Diodes in Boost APFC Operating in CCM  

E-Print Network (OSTI)

Benefits of Silicon Carbide Schottky Diodes in Boost APFC Operating in CCM Sam Ben lossless snubber to a design with a Silicon Carbide (SiC) diode without snubber. The theoretical of the Silicon Carbide (SiC) Schottky diodes (Infineon) changes the pictures completely. As will be detailed

408

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation  

E-Print Network (OSTI)

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation Yutian Cui silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic like silicon carbide (SiC) and gallium nitride (GaN) are becoming more attractive. SiC power devices

Tolbert, Leon M.

409

Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses*  

E-Print Network (OSTI)

Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses* Burak Ozpineci1,3 burak and Education Oak Ridge, TN 37831-0117 Abstract-The emergence of silicon carbide- (SiC-) based power, silicon carbide (SiC) with its superior properties compared with Si, is a good candidate to be used

Tolbert, Leon M.

410

DOI: 10.1002/chem.200901982 Template-Synthesized Porous Silicon Carbide as an Effective Host  

E-Print Network (OSTI)

DOI: 10.1002/chem.200901982 Template-Synthesized Porous Silicon Carbide as an Effective Host, especially those that can work more du- rably under harsh conditions. Silicon carbide (SiC) is a promising has been de- veloped for the fabrication of porous silicon carbide (SiC) by means of sin- tering

Bao, Xinhe

411

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices  

E-Print Network (OSTI)

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices will be available after the conference. Abstract Silicon Carbide devices can achieve very high switching speed-mode filtering). The consequences on the switching speed are discussed. 1. Introduction Silicon carbide (Si

Paris-Sud XI, Université de

412

SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES BURAK OZPINECI1,3  

E-Print Network (OSTI)

SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES BURAK OZPINECI1,3 , LEON M. TOLBERT1,2 , SYED K carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon, silicon carbide (SiC), with superior properties compared with Si, is a good candidate to be used

Tolbert, Leon M.

413

Accepted Manuscript Abundances of presolar silicon carbide grains in primitive meteorites deter-  

E-Print Network (OSTI)

Accepted Manuscript Abundances of presolar silicon carbide grains in primitive meteorites deter.R., Alexander, C.M., Orthous-Daunay, o-R., Franchi, I.A., Hoppe, P., Abundances of presolar silicon carbide of presolar silicon carbide grains in primitive meteorites determined by NanoSIMS Jemma Davidsona,1,* , Henner

Nittler, Larry R.

414

Short-and intermediate-range structural correlations in amorphous silicon carbide: A molecular dynamics study  

E-Print Network (OSTI)

Short- and intermediate-range structural correlations in amorphous silicon carbide: A molecular-range structural correlations in amorphous silicon carbide a-SiC are studied in terms of partial pair distributions.43.Dq, 61.43.Bn, 61.66.Dk, 81.05.Gc I. INTRODUCTION Silicon carbide SiC has been receiving increasing

Southern California, University of

415

Thermal rectification at silicon-amorphous polyethylene interface Ming Hu,1,a  

E-Print Network (OSTI)

Thermal rectification at silicon-amorphous polyethylene interface Ming Hu,1,a Pawel Keblinski,1,b heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene by amorphous polymer polyethylene PE and silicon crystal. We will also show that the mecha- nism governing

Li, Baowen

416

Electrochemical method for defect delineation in silicon-on-insulator wafers  

DOE Patents (OSTI)

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Guilinger, Terry R. (Albuquerque, NM); Jones, Howland D. T. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Medernach, John W. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

417

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents (OSTI)

Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Tam, S.W.

1997-02-25T23:59:59.000Z

418

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents (OSTI)

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1997-01-01T23:59:59.000Z

419

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents (OSTI)

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1998-01-01T23:59:59.000Z

420

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents (OSTI)

An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Tam, S.W.

1998-06-16T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

RATS: restoration-aware trace signal selection for post-silicon validation  

Science Journals Connector (OSTI)

Post-silicon validation is one of the most important and expensive tasks in modern integrated circuit design methodology. The primary problem governing post-silicon validation is the limited observability due to storage of a small number of signals in ... Keywords: post-silicon validation, restoration, trace buffer, trace signals

Kanad Basu; Prabhat Mishra

2013-04-01T23:59:59.000Z

422

Ultra-low reflection porous silicon nanowires for solar cell applications  

E-Print Network (OSTI)

Ultra-low reflection porous silicon nanowires for solar cell applications A. Najar,1, * J. Charrier aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide

Paris-Sud XI, Université de

423

Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions  

E-Print Network (OSTI)

nanoparticle suspensions Noah T. Jafferisa) and James C. Sturm Department of Electrical Engineering, Princeton and processable silicon thin-films from single-crystal silicon-nanoparticle suspensions. Single-crystal Si-nanoparticles on printing silicon from nanoparticles has shown much promise.3,4 Ha¨rting et al.4 report screen-printed films

424

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings  

E-Print Network (OSTI)

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light ABSTRACT: Enhancing the light absorption in ultrathin-film silicon solar cells is important for improving in the back reflector. KEYWORDS: Solar cells, light trapping, antireflection, crystalline silicon, absorption

Fan, Shanhui

425

Solidification of polycrystalline silicon ingots : simulation and characterization of the microstructure  

E-Print Network (OSTI)

.90 1. Introduction. The most important development in silicon solar cells is due to the substitution solidification of poly- crystalline silicon (POLYX). The capacity of the initial furnace was about 1 kg and today the silicon in a graphite crucible using induction heating furnace. The crucible is well insulated to reduce

Paris-Sud XI, Université de

426

Electrical noise characteristics of a doped silicon microcantilever heater-thermometer  

E-Print Network (OSTI)

Electrical noise characteristics of a doped silicon microcantilever heater-thermometer Elise A with resistive heater-thermometers,10­13 there is a lack of published reports on the electrical noise silicon heater- thermometer cantilevers.12 However, a key difference is that doped silicon heater-thermometers

King, William P.

427

Tight-binding model for hydrogen-silicon interactions  

SciTech Connect

We have developed an empirical tight-binding model for use in molecular-dynamics simulations to study hydrogen-silicon systems. The hydrogen-silicon interaction is constructed to reproduce the electronic energy levels and vibration frequencies of silane (SiH{sub 4}). Further use of the model in the studies of disilane (Si{sub 2}H{sub 6}) and of hydrogen on the Si(111) surface also yields results in good agreement with first-principles calculations and experiments.

Min, B.J.; Lee, Y.H.; Wang, C.Z.; Chan, C.T.; Ho, K.M. (Microelectronics Research Center, Ames Laboratory, Iowa State University, Ames, Iowa 50011 (United States) Department of Physics and Astronomy, Ames Laboratory, Iowa State University, Ames, Iowa 50011 (United States))

1992-03-15T23:59:59.000Z

428

Optical Damage Threshold of Silicon for Ultrafast Infrared Pulses  

SciTech Connect

While silicon has several properties making it an attractive material for structure-based laser-driven acceleration, its optical damage threshold, a key parameter for high-gradient acceleration, has been unknown. Here we present measurements of the optical damage threshold of crystalline silicon for ultrafast pulses in the mid-infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm extending longer toward the two-photon absorption threshold at around 2200 nm. We discuss the prevailing theories of ultrafast optical breakdown, describe the experimental setup and preliminary results, and propose a relevant performance parameter for candidate accelerator structures.

Cowan, B.; /SLAC

2006-09-07T23:59:59.000Z

429

Electronic states in epitaxial graphene fabricated on silicon carbide  

SciTech Connect

An analytical expression for the density of states of a graphene monolayer interacting with a silicon carbide surface (epitaxial graphene) is derived. The density of states of silicon carbide is described within the Haldane-Anderson model. It is shown that the graphene-substrate interaction results in a narrow gap of {approx}0.01-0.06 eV in the density of states of graphene. The graphene atom charge is estimated; it is shown that the charge transfer from the substrate is {approx}10{sup -3}-10{sup -2}e per graphene atom.

Davydov, S. Yu., E-mail: Sergei_Davydov@mail.ru [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-08-15T23:59:59.000Z

430

A millimeter-wave antireflection coating for cryogenic silicon lenses  

E-Print Network (OSTI)

We have developed and tested an antireflection (AR) coating method for silicon lenses at cryogenic temperatures and millimeter wavelengths. Our particular application is a measurement of the cosmic microwave background. The coating consists of machined pieces of Cirlex glued to the silicon. The measured reflection from an AR coated flat piece is less than 1.5% at the design wavelength. The coating has been applied to flats and lenses and has survived multiple thermal cycles from 300 to 4 K. We present the manufacturing method, the material properties, the tests performed, and estimates of the loss that can be achieved in practical lenses.

J. M. Lau; J. W. Fowler; T. A. Marriage; L. Page; J. Leong; E. Wishnow; R. Henry; E. Wollck; M. Halpern; D. Marsden; G. Marsden

2007-01-04T23:59:59.000Z

431

Efficient photon number detection with silicon avalanche photodiodes  

E-Print Network (OSTI)

We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection efficiency at 600 nm is measured to be 73.8%, corresponding to an avalanche probability of 91.1% of the absorbed photons, with a dark count probability below 1.1x10^{-6} per gate. With this performance and operation close to room temperature, fast-gated silicon avalanche photodiodes are ideal for optical quantum information processing that requires single-shot photon number detection.

O. Thomas; Z. L. Yuan; J. F. Dynes; A. W. Sharpe; A. J. Shields

2010-07-21T23:59:59.000Z

432

Transmissive metallic contact for amorphous silicon solar cells  

DOE Patents (OSTI)

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Madan, A.

1984-11-29T23:59:59.000Z

433

The analysis and optimization of a spherical silicon solar cell  

E-Print Network (OSTI)

THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee /'' Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE... August 1976 Ma]or Subject: Electrical Engineering THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee Approved as to style and content by: (Chai. rman of Committee) (H of D partment) (Member) 2D...

McKee, William Randall

2012-06-07T23:59:59.000Z

434

Plasma-enriched chemical vapor deposition of silicon nitride on silicon carbide fibers  

SciTech Connect

Near stoichiometric Si:N coatings were deposited by means of PECVD on SCS-6 SiC fibers which contained a carbon-rich coating. Weight loss associated with oxidation of the outer carbon-rich coating of the as-received SiC fibers was greatly reduced for the Si:N coated SiC fibers even after 10 h heat-treatment in oxygen at 800{degrees}C. Auger Electron Spectroscopy (AES) was used to obtain elemental compositions of the as-received and Si:N coated SiC fibers after heat-treatment. Negligible amounts of oxygen were found at the carbon-rich coating of the heat-treated Si:N coated SiC fiber. These results clearly prove the effectiveness of PECVD silicon nitride coating as an oxygen diffusion barrier.

Stinespring, C.D.; Collazos, D.F.; Gupta, R.K. [West Virginia Univ., Morgantown, WV (United States)] [and others

1994-12-31T23:59:59.000Z

435

Solar-Grade Silicon from Metallurgical-Grade Silicon Via Iodine Chemical Vapor Transport Purification: Preprint  

SciTech Connect

This conference paper describes the atmospheric-pressure in an ''open'' reactor, SiI2 transfers from a hot (>1100C) Si source to a cooler (>750C) Si substrate and decomposes easily via 2SiI2 Si+ SiI4 with up to 5?m/min deposition rate. SiI4 returns to cyclically transport more Si. When the source is metallurgical-grade Si, impurities can be effectively removed by three mechanisms: (1) differing free energies of formation in forming silicon and impurity iodides; (2) distillation; and (3) differing standard free energies of formation during deposition. Distillation has been previously reported. Here, we focused on mechanisms (1) and (3). We made feedstock, analyzed the impurity levels, grew Czochralski single crystals, and evaluated crystal and photovoltaic properties. Cell efficiencies of 9.5% were obtained. Incorporating distillation (step 2) should increase this to a viable level.

Ciszek, T. F.; Wang, T. H.; Page, M. R.; Bauer, R. E.; Landry, M. D.

2002-05-01T23:59:59.000Z

436

Metal-like self-organization of periodic nanostructures on silicon and silicon carbide under femtosecond laser pulses  

SciTech Connect

Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600?nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material.

Gemini, Laura [Advanced Research Center for beam Science, Institute for Chemical Research, Kyoto University, 611-0011 Kyoto (Japan); Department of Physics, Graduate School of Science, Kyoto University, 606-85802 Kyoto (Japan); FNSPE, Czech Technical University in Prague, 11519 Prague (Czech Republic); HiLASE Project, Institute of Physics, ASCR, 18221 Prague (Czech Republic); Hashida, Masaki; Shimizu, Masahiro; Miyasaka, Yasuhiro; Inoue, Shunsuke; Tokita, Shigeki; Sakabe, Shuji [Advanced Research Center for beam Science, Institute for Chemical Research, Kyoto University, 611-0011 Kyoto (Japan); Department of Physics, Graduate School of Science, Kyoto University, 606-85802 Kyoto (Japan); Limpouch, Jiri [FNSPE, Czech Technical University in Prague, 11519 Prague (Czech Republic); Mocek, Tomas [HiLASE Project, Institute of Physics, ASCR, 18221 Prague (Czech Republic)

2013-11-21T23:59:59.000Z

437

Method for silicon carbide production by reacting silica with hydrocarbon gas  

DOE Patents (OSTI)

A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1994-01-01T23:59:59.000Z

438

Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment  

DOE Patents (OSTI)

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1982-01-01T23:59:59.000Z

439

Modeling the Process of Mining Silicon Through a Single Displacement/Redox Reaction  

K-12 Energy Lesson Plans and Activities Web site (EERE)

As the popularity of photovoltaic (PV) cells and integrated circuits (IC) increases, the need for silicon also increases. Silicon is one of the most used materials in these two industries. It is an inexpensive and abundant semiconductor. However, the process of producing pure silicon adds cost, and it is generally unknown to the public. One of the first steps in producing silicon is a process called carbon-thermic reduction. Silicon dioxide (SiO2) that is found in beach sand and quartz is melted down in a caldron at a temperature of 1450 degrees Celsius.

440

Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature  

E-Print Network (OSTI)

Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature Simone film crystal growth of silicon carbide (SiC), a semiconductor syn- thesized to replace silicon in harsh

Alfè, Dario

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 9, NO. 1, MARCH 2000 3 Localized Silicon Fusion and Eutectic Bonding for  

E-Print Network (OSTI)

are required to provide the bonding energy. For example, the conventional silicon-to-silicon fusion bondingJOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 9, NO. 1, MARCH 2000 3 Localized Silicon Fusion, Fellow, IEEE Abstract--Silicon fusion and eutectic bonding processes based on the technique of localized

Lin, Liwei

442

SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS  

SciTech Connect

Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. This SiC made by our LSI process meets the thermal properties required for use in high temperature heat exchanger. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin. AC and DC electrical measurements were made to follow the thermal conversion of microcrystalline cellulose to carbon. This study identifies five regions of electrical conductivity that can be directly correlated to the chemical decomposition and microstructural evolution during carbonization. In Region I, a decrease in overall AC conductivity occurs due to the initial loss of the polar groups from cellulose molecules. In Region II, the AC conductivity starts to increase with heat treatment temperature due to the formation and growth of conducting carbon clusters. In Region III, a further increase of AC conductivity with increasing heat treatment temperature is obs

DR. DENNIS NAGLE; DR. DAJIE ZHANG

2009-03-26T23:59:59.000Z

443

Wanxiang Silicon Peak Electronics Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Wanxiang Silicon Peak Electronics Co Ltd Wanxiang Silicon Peak Electronics Co Ltd Jump to: navigation, search Name Wanxiang Silicon-Peak Electronics Co Ltd Place Kaihua, Zhejiang Province, China Zip 324300 Sector Solar Product Maker of monocrystalline silicon ingots and wafers and subsidiary of the Wanxiang Group which includes solar cell and module maker Wanxiang Solar. Coordinates 29.140209°, 118.405113° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":29.140209,"lon":118.405113,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

444

NGEN Partners LLC (Silicon Valley) | Open Energy Information  

Open Energy Info (EERE)

Silicon Valley) Silicon Valley) Jump to: navigation, search Logo: NGEN Partners LLC (Silicon Valley) Name NGEN Partners LLC (Silicon Valley) Address 720 University Avenue Place Palo Alto, California Zip 94301 Region Bay Area Product Invest in early to late-stage clean energy businesses. Year founded 2001 Phone number (650) 321-4100 Website http://www.ngenpartners.com/ Coordinates 37.450711°, -122.156278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.450711,"lon":-122.156278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

445

Ultralow Thermal Conductivity of Isotope-Doped Silicon Nanowires  

E-Print Network (OSTI)

conductivity of SiNWs is about 2 orders of magnitude smaller than that of bulk crystals.18,19 The low thermal conductivity (0.05 W/m K) found in layered materials.22 So it is indispensable to reduce the thermal conUltralow Thermal Conductivity of Isotope-Doped Silicon Nanowires Nuo Yang, Gang Zhang,*, and Baowen

Li, Baowen

446

Potential of Silicon Carbide-Derived Carbon for Carbon Capture  

Science Journals Connector (OSTI)

Potential of Silicon Carbide-Derived Carbon for Carbon Capture ... In contrast to conventional carbons made from natural precursors, carbide derived carbons (CDCs),(8, 10-13) being synthesized from an inorganic source, have no polar functional groups and are composed of purely covalently bonded carbon. ...

S. K. Bhatia; T. X. Nguyen

2011-08-08T23:59:59.000Z

447

Chemical vapor deposition of amorphous silicon films from disilane  

SciTech Connect

Amorphous silicon films for fabrication of solar cells have been deposited by thermal chemical vapor deposition (CVD) from disilane (Si/sub 2/H/sub 6/) using a tubular flow reactor. A mathematical description for the CVD reactor was developed and solved by a numerical procedure. The proposed chemical reaction network for the model is based on silylene (SiH/sub 2/) insertion in the gas phase and film growth from SiH/sub 2/ and silicon polymers (Si/sub n/N/sub 2n/, n approx. 10). Estimates of the rate constants have been obtained for trisilane decomposition, silicon polymer formation, and polymer dehydrogenation. The silane unimolecular decomposition rate constants were corrected for pressure effects. The model behavior is compared to the experimental results over the range of conditions: reactor temperature (360 to 485/sup 0/C), pressures (2 to 48 torr), and gas holding time (1 to 70 s). Within the above range of conditions, film growth rate varies from 0.01 to 30 A/s. Results indicate that silicon polymers are the main film precursors for gas holding times greater than 3 s. Film growth by silylene only becomes important at short holding times, large inert gas dilution, and positions near the beginning of the reactor hot zone.

Bogaert, R.J.

1986-01-01T23:59:59.000Z

448

Amorphous Silicon as Semiconductor Material for High Resolution LAPS  

E-Print Network (OSTI)

-08 3.E -08 0 200 400 600 800 displacem ent/µµµµm current/A 1000 2000 3000 4000 1000 2000 3000 4000-substrate Amorphous silicon -4 -2 0 2 4 0,2 0,4 0,6 0,8 1,0 photocurrenta.u. gate voltage/V 600µm x 600µm area scan

Moritz, Werner

449

Micro-miniature gas chromatograph column disposed in silicon wafers  

DOE Patents (OSTI)

A micro-miniature gas chromatograph column is fabricated by forming matching halves of a circular cross-section spiral microcapillary in two silicon wafers and then bonding the two wafers together using visual or physical alignment methods. Heating wires are deposited on the outside surfaces of each wafer in a spiral or serpentine pattern large enough in area to cover the whole microcapillary area inside the joined wafers. The visual alignment method includes etching through an alignment window in one wafer and a precision-matching alignment target in the other wafer. The two wafers are then bonded together using the window and target. The physical alignment methods include etching through vertical alignment holes in both wafers and then using pins or posts through corresponding vertical alignment holes to force precision alignment during bonding. The pins or posts may be withdrawn after curing of the bond. Once the wafers are bonded together, a solid phase of very pure silicone is injected in a solution of very pure chloroform into one end of the microcapillary. The chloroform lowers the viscosity of the silicone enough that a high pressure hypodermic needle with a thumbscrew plunger can force the solution into the whole length of the spiral microcapillary. The chloroform is then evaporated out slowly to leave the silicone behind in a deposit.

Yu, Conrad M. (Antioch, CA)

2000-01-01T23:59:59.000Z

450

Surface wettability of oxygen plasma treated porous silicon  

Science Journals Connector (OSTI)

Oxygen plasma treatment on porous silicon (p-Si) surfaces was studied as a practical and effective means to modify wetting properties of as-fabricated p-Si surfaces, that is, contact angles of the p-Si materials. P-Si samples spanning a wide range of ...

Lei Jiang, Songyan Li, Jiqian Wang, Limin Yang, Qian Sun, Zhaomin Li

2014-01-01T23:59:59.000Z

451

RESEARCH PAPER Fouling and its mitigation in silicon microchannels used  

E-Print Network (OSTI)

RESEARCH PAPER Fouling and its mitigation in silicon microchannels used for IC chip cooling Jeffrey@rit.edu 123 Microfluid Nanofluid (2008) 5:357­371 DOI 10.1007/s10404-007-0254-4 #12;lE electrophoretic and micro- electronics. In recent years, the proliferation of Micro Electro Mechanical Systems (MEMS) has

Kandlikar, Satish

452

Stabilization of Photoluminescence of Porous Silicon with Nonaqueous Anodic Oxidation  

Science Journals Connector (OSTI)

In order to prevent the reduction of photoluminescence from porous silicon, we tried to form stable SiO bonds by anodization in nonaqueous electrolyte at room temperature. Extremely strong, stable, and blue-shifted photoluminescence was obtained in porous silicon that was prepared in 1:1 solution of 49% HF and EtOH and subsequently anodized in KNO3-ethylene glycol electrolytes. The optimum condition was anodization at 20 mA cm-2 for 5 min in 0.02 M KNO3-ethylene glycol. For the formation of SiO bonds on nanostructured surfaces, it is suggested that the electric field across the surface/electrolyte plays an important role because oxidation becomes more effective when the electrolyte is more resistive. SiOH, which is formed as a precursor at subsequent anodization, stabilizes the nanostructured surface, converting itself to more stable SiO bond with photoexcitation. The high current density introduced destroys nanostructured silicon by clustering with surrounding SiO2. With this clustering, wall sizes of the nanostructured silicon remain constant with anodization.

Michiko Shimura; Minoru Katsuma; Tsugunori Okumura

1996-01-01T23:59:59.000Z

453

Silicon microbench heater elements for packaging opto-electronic devices  

SciTech Connect

Examples are presented of the application of Lawrence Livermore National Laboratory`s expertise in photonics packaging. Several examples of packaged devices will be described. Particular attention is given to silicon microbenches incorporating heaters and their use in semiconductor optical amplifier fiber pigtailing and packaging.

Combs, R.; Keiser, P.; Kleint, K.; Pocha, M.; Patterson, F.; Strand, O.T.

1995-09-01T23:59:59.000Z

454

Nuclear breeder reactor fuel element with silicon carbide getter  

DOE Patents (OSTI)

An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

Christiansen, David W. (Kennewick, WA); Karnesky, Richard A. (Richland, WA)

1987-01-01T23:59:59.000Z

455

NREL Success Stories - Quest for Inexpensive Silicon Solar Cells  

ScienceCinema (OSTI)

Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

Branz, Howard

2013-05-29T23:59:59.000Z

456

Silicon infrared photodetector using sub-bandgap transitions  

E-Print Network (OSTI)

W) (mTorr) Gases flow rate (sccm) CF4 O2 Etched Depth ( nm )also etches silicon, a high CF4 flow rate condition (step1Step 2 Gas flow rate (sccm) CF4 O2 PDMS etching rate(nm/min)

Kim, HongKwon

2011-01-01T23:59:59.000Z

457

Status, Technology and Development of Silicon Solar Cells at Iner  

Science Journals Connector (OSTI)

The current solar cells processing at INER are single crystal silicon with 1.22.8 ?-cm resistivity. They are thermal diffused n on p or p on n type cells with Ti/Pd/Ag metallization and Ta2O5 AR coating. Some wo...

S. S. Jao; H. H. Tseng; C. Cheng; Y. C. Tzeng

1981-01-01T23:59:59.000Z

458

Ultrasmall silicon quantum dots F. A. Zwanenburg,1,a  

E-Print Network (OSTI)

by a model based on the Poisson equation. The smallest dots 12 nm allow identification of the last charge-down planar silicon devices,1­3 produced by etching bulk materials down to nanometer dimensions, often show understanding of the specific system. This has allowed us to realize the first experimental identification

459

Conducting polymer and hydrogenated amorphous silicon hybrid solar cells  

E-Print Network (OSTI)

November 2005 An organic-inorganic hybrid solar cell with a p-i-n stack structure has been investigated for their potential in electronic devices such as organic light emitting diodes OLEDs , solar cells, photode- tectorsConducting polymer and hydrogenated amorphous silicon hybrid solar cells Evan L. Williams

Schiff, Eric A.

460

Charge-Density Variation in a Model of Amorphous Silicon  

Science Journals Connector (OSTI)

A population analysis of the one-electron eigenfunctions of random-network models of amorphous silicon shows fluctuations of the net atomic charge of about 0.2 electron units rms. The majority of the charge is calculable from a linear function of the deviations of first-neighbor distance and of the interbond angle from their values in the crystal.

Lester Guttman, W. Y. Ching, and Jagannath Rath

1980-06-09T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Electronic Supplementary Material Scalable preparation of porous silicon nanoparticles and  

E-Print Network (OSTI)

and their application for lithium-ion battery anodes Mingyuan Ge1 , Jiepeng Rong1 , Xin Fang1 , Anyi Zhang1 , Yunhao Lu2 with reduced graphene oxide Figure S2 TEM image of porous silicon nanoparticles after carbon coating and graphene wrapping. #12;www.theNanoResearch.comwww.Springer.com/journal/12274 | Nano R

Zhou, Chongwu

462

Bitcoin and The Age of Bespoke Silicon Michael Bedford Taylor  

E-Print Network (OSTI)

Bitcoin and The Age of Bespoke Silicon Michael Bedford Taylor University of California, San Diego ABSTRACT Recently, the Bitcoin cryptocurrency has been an interna- tional sensation. This paper tells the story of Bitcoin hard- ware: how a group of early-adopters self-organized and fi- nanced the creation

Wang, Deli

463

Resolution Studies on Silicon Strip Sensors with fine Pitch  

E-Print Network (OSTI)

In June 2008 single-sided silicon strip sensors with 50 $\\mu$m readout pitch were tested in a highly energetic pion beam at the SPS at CERN. The purpose of the test was to evaluate characteristic detector properties by varying the strip width and the number of intermediate strips. The experimental setup and first results for the spatial resolution are discussed.

S. Haensel; T. Bergauer; Z. Dolezal; M. Dragicevic; Z. Drasal; M. Friedl; J. Hrubec; C. Irmler; W. Kiesenhofer; M. Krammer; P. Kvasnicka

2009-01-30T23:59:59.000Z

464

Microstructure and properties of copper thin films on silicon substrates  

E-Print Network (OSTI)

copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown...

Jain, Vibhor Vinodkumar

2009-05-15T23:59:59.000Z

465

CURRENT NEWS Sandwich Solar Cells May See Off Silicon  

E-Print Network (OSTI)

CURRENT NEWS Sandwich Solar Cells May See Off Silicon May 24, 2010 A new manufacturing technique of devices using GaAs chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cells. The authors also provide a detailed cost comparison. Another advantage of the multilayer

Rogers, John A.

466

Silicon Microwire Arrays for Solar Energy-Conversion Applications  

Science Journals Connector (OSTI)

Silicon Microwire Arrays for Solar Energy-Conversion Applications ... The Si MW array geometry allows for efficient collection of photogenerated carriers from impure materials that have short minority-carrier diffusion lengths while simultaneously allowing for high optical absorption and high external quantum yields for charge-carrier collection. ...

Emily L. Warren; Harry A. Atwater; Nathan S. Lewis

2013-12-09T23:59:59.000Z

467

Silicon-on-Insulator Racetrack Resonator Tuning Via Ion Implantation  

E-Print Network (OSTI)

Silicon-on-Insulator Racetrack Resonator Tuning Via Ion Implantation Jason Ackert, Dylan Logan, Jonathan Doylend and Andrew Knights Department of Engineering Physics McMaster University Hamilton, Canada Lukas Chrostowski and Raha Vafaei Department of Electrical and Computer Engineering University

Bowers, John

468

Propionic-Acid-Terminated Silicon Nanoparticles: Synthesis and Optical Characterization  

E-Print Network (OSTI)

producing water-dispersible, propionic-acid-terminated particles. From transmission electron microscope (TEM oxidation of the nanocrystals. The silicon nanocrystals could be transferred into water or methanol in acrylic acid, water, and methanol and showed essentially the same optical properties in all three solvents

Swihart, Mark T.

469

Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,  

E-Print Network (OSTI)

alternative energy solution. KEYWORDS: Nanotexture, solar cell, heterojunction, conductive polymer, light solar cell.1 Conventional Si solar cells have p-n junctions inside for an efficient extraction of lightHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

Cui, Yi

470

Laser beam reflection from shock waves in xenon and silicon  

Science Journals Connector (OSTI)

The experimental results of the laser beam (?=1 06 ?m) reflection from shock waves in xenon at P=1 6+17 GPa and in silicon at an insulator?metal transition region at P=10+46 GPa are presented. Reflection characteristics and possibility of the estimation of the electron properties of the substance under high pressures are discussed.

V. B. Mintsev; Yu. B. Zaporoghets; V. E. Fortov

1990-01-01T23:59:59.000Z

471

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network (OSTI)

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

472

Thermal Transport Measurement of Silicon-Germanium Nanowires  

E-Print Network (OSTI)

to the enhanced boundary scattering. Among the nanoscale semiconductor materials, Silicon-Germanium(SiGe) alloy nanowire is a promising candidate for thermoelectric materials The thermal conductivities of SiGe core-shell nanowires with core diameters of 96nm, 129...

Gwak, Yunki

2010-10-12T23:59:59.000Z

473

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network (OSTI)

;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature & Metal Closeup 14 Front and Back of Screen Printed Solar Cell 15 Crystallization Furnace for Ingot1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

Kaiser, Todd J.

474

Epitaxial HTS bolometers on silicon for IR detection  

SciTech Connect

Silicon wafers have shown promise for the fabrication of photothermal IR detectors (i.e., bolometers) from epitaxial HTS thin films of YBa{sub 2}Cu{sub 3}O{sub (7{minus}{delta})} (YBCO). Conventional IC-grade wafers, ultrathin wafers, and micromachined-silicon membrane windows in conventional wafers, are all suitable, but the latter provides considerable advantage for bolometer performance. The high thermal conductivity and strength of silicon make it ideal for submicron-thick window designs. Epitaxy in the HTS film is advantageous, since it reduces granular disorder, the primary cause of dark noise (resistance-fluctuations) in the detector. Mid-to-far-IR transparency of Si at 90 K is unique among those substrates that support high-quality epitaxial YBCO films. This Si transparency to IR can be used for various improvements in the optical design of these devices. The authors review the thermal and optical advantages of silicon substrates, device fabrication issues, and bolometer modeling. Thermal modeling of membrane bolometers indicates that the steady-state temperature-rise profile is nonuniform, but that this does not degrade the response linearity of the bolometer. Certain size limits and trade-offs in the design, will be important in the final device performance. They also discuss applications to FTIR instruments, and extensions of this technology to arrays including a novel on-chip transform spectrometer design.

Fenner, D.B.; Li, Q.; Hamblen, W.D.; Luo, J.; Hamblen, D.G. [AFR, Inc., East Hartford, CT (United States). Superconductivity Group; Budnick, J.I. [Univ. of Connecticut, Storrs, CT (United States). Dept. of Physics

1994-12-31T23:59:59.000Z

475

And the Award Goes to... Silicon Ink Solar Technology Supported by  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

And the Award Goes to... Silicon Ink Solar Technology Supported by And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator July 19, 2011 - 5:00pm Addthis Innovalight’s silicon ink technology | Photo courtesy of Innovalight Innovalight's silicon ink technology | Photo courtesy of Innovalight What does this mean for me? Pioneering startup Innovalight partnered with NREL to invent the first liquid silicon on the market. When paired with Innovalight's industrial screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum roll is heard, cameras zoom in on the anxious faces of the

476

And the Award Goes to... Silicon Ink Solar Technology Supported by  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

And the Award Goes to... Silicon Ink Solar Technology Supported by And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator July 19, 2011 - 5:00pm Addthis Innovalight’s silicon ink technology | Photo courtesy of Innovalight Innovalight's silicon ink technology | Photo courtesy of Innovalight What does this mean for me? Pioneering startup Innovalight partnered with NREL to invent the first liquid silicon on the market. When paired with Innovalight's industrial screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum roll is heard, cameras zoom in on the anxious faces of the

477

NREL: Photovoltaics Research - Silicon Materials and Devices R&D  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Materials and Devices R&D Silicon Materials and Devices R&D R&D 100 Awards Since 2010, we have won three R&D 100 Awards. Flash Quantum Efficiency (Flash QE) System for Solar Cells Innovalight Silicon Ink Process Low-Cost Black Silicon Etching Process Graphic of three layers. The bottom layer, called inexpensive substrate, is white. Middle dark blue layer is called the seed. Top light blue layer has the text epi c-Si absorber. Schematic diagram of the film crystal silicon solar cell. A high-quality crystal silicon absorber is grown epitaxially on a seed layer applied to an inexpensive foreign substrate (e.g., display glass or rolled metal foil). At NREL, we are developing various emitter, back-surface field, and light-trapping strategies. NREL has world-leading research capabilities and expertise in silicon

478

Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys  

DOE Patents (OSTI)

Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide. 1 fig.

Stevenson, D.T.; Troup, R.L.

1985-01-01T23:59:59.000Z

479

Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys  

DOE Patents (OSTI)

Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide.

Stevenson, David T. (Washington Township, Armstrong County, PA); Troup, Robert L. (Murrysville, PA)

1985-01-01T23:59:59.000Z

480

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces  

DOE Patents (OSTI)

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09T23:59:59.000Z

Note: This page contains sample records for the topic "guiyang polysource silicon" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Statistical equilibrium of silicon in the solar atmosphere  

E-Print Network (OSTI)

The statistical equilibrium of neutral and ionised silicon in the solar photosphere is investigated. Line formation is discussed and the solar silicon abundance determined. High-resolution solar spectra were used to determine solar $\\log gf\\epsilon_{\\rm Si}$ values by comparison with Si line synthesis based on LTE and NLTE level populations. The results will be used in a forthcoming paper for differential abundance analyses of metal-poor stars. A detailed analysis of silicon line spectra leads to setting up realistic model atoms, which are exposed to interactions in plane-parallel solar atmospheric models. The resulting departure coefficients are entered into a line-by-line analysis of the visible and near-infrared solar silicon spectrum. The statistical equilibrium of \\ion{Si}{i} turns out to depend marginally on bound-free interaction processes, both radiative and collisional. Bound-bound interaction processes do not play a significant role either, except for hydrogen collisions, which have to be chosen adequately for fitting the cores of the near-infrared lines. Except for some near-infrared lines, the NLTE influence on the abundances is weak. Taking the deviations from LTE in silicon into account, it is possible to calculate the ionisation equilibrium from neutral and ionised lines. The solar abundance based on the experimental $f$-values of Garz corrected for the Becker et al.'s measurement is $7.52 \\pm 0.05$. Combined with an extended line sample with selected NIST $f$-values, the solar abundance is $7.52 \\pm 0.06$, with a nearly perfect ionisation equilibrium of $\\Delta\\log\\epsilon_\\odot(\\ion{Si}{ii}/\\ion{Si}{i}) = -0.01$.

J. R. Shi; T. Gehren; K. Butler; L. I. Mashonkina; G. Zhao

2008-05-23T23:59:59.000Z

482

Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation  

E-Print Network (OSTI)

is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared FTIR samples used in this work were boron doped p-type Si 100 , 0.01­0.02 cm. Porous silicon films were solution to remove the native oxide and subse- quently rinsed with de-ionized water and dried under nitro

Weiss, Sharon

483

Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films  

SciTech Connect

Silicon quantum dots (QDs) embedded in hydrogenated amorphous Si-rich silicon carbide (?-SiC:H) thin films were realized by plasma-enhanced chemical vapor deposition process and post-annealing. Fluorescence spectroscopy was used to characterize the room-temperature photoluminescence properties. X-ray photoelectron spectroscopy was used to analyze the element compositions and bonding configurations. Ultraviolet visible spectroscopy, Raman scattering, and high-resolution transmission electron microscopy were used to display the microstructural properties. Photoluminescence measurements reveal that there are six emission sub-bands, which behave in different ways. The peak wavelengths of sub-bands P1, P2, P3, and P6 are pinned at about 425.0, 437.3, 465.0, and 591.0?nm, respectively. Other two sub-bands, P4 is red-shifted from 494.6 to 512.4?nm and P5 from 570.2 to 587.8?nm with temperature increasing from 600 to 900?C. But then are both blue-shifted, P4 to 500.2?nm and P5 to 573.8?nm from 900 to 1200?C. The X-ray photoelectron spectroscopy analysis shows that the samples are in Si-rich nature, Si-O and Si-N bonds consumed some silicon atoms. The structure characterization displays that a separation between silicon phase and SiC phase happened; amorphous and crystalline silicon QDs synthesized with increasing the annealing temperature. P1, P2, P3, and P6 sub-bands are explained in terms of defect-related emission, while P4 and P5 sub-bands are explained in terms of quantum confinement effect. A correlation between the peak wavelength shift, as well as the integral intensity of the spectrum and crystallization of silicon QDs is supposed. These results help clarify the probable luminescence mechanisms and provide the possibility to optimize the optical properties of silicon QDs in Si-rich ?-SiC: H materials.

Wen, Guozhi [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); School of Electronic and Electrical Engineering, Wuhan Polytechnic University, Wuhan, Hubei 430023 (China); Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixin; Liao, Wugang [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

2014-04-28T23:59:59.000Z

484

Recrystallization of amorphous silicon deposited on ultra thin microcrystalline silicon layers  

SciTech Connect

This study reports on a method to reduce the thermal crystallization time and temperature of amorphous silicon films by initially depositing an ultra thin {micro}c-Si:H seed layer. After rapid thermal annealing (RTA), films were characterized by means of Raman spectroscopy, x-ray diffraction, reflection high energy electron diffraction, atomic force microscopy, and dark and photocurrent. The results show that the microcrystalline particles in the seed layer act as nucleation centers, promoting crystallization of a-Si:H at lower temperatures and at shorter times, compared to a-Si:H films deposited without any seed layer. Additionally, it was found that the seed layer affects the orientation of the crystallized films. The dark current increases abruptly over 4 orders of magnitude in the first 15 second anneal, then decreases as the time increases, and tends to saturate. The photocurrent has an opposite behavior. These transport results can be understood in terms of a change in defect density and band gap shrinkage.

Wang, F.; Wolfe, D.; Lucovsky, G.

1997-07-01T23:59:59.000Z

485

Anisotropy of the solid-state epitaxy of silicon carbide in silicon  

SciTech Connect

A new method for the solid-state synthesis of epitaxial layers is developed, in which a substrate participates in the chemical reaction and the reaction product grows not on the substrate surface, as in traditional epitaxial methods, but inside the substrate. This method offers new opportunities for elastic-energy relaxation due to a mechanism operating only in anisotropic media, specifically, the attraction of point defects formed during the chemical reaction. The attracting point centers of dilatation form relatively stable objects, dilatation dipoles, which significantly reduce the total elastic energy. It is shown that, in crystals with cubic symmetry, the most favorable arrangement of dipoles is the ?111? direction. The theory is tested by growing silicon carbide (SiC) films on Si (111) substrates by chemical reaction with carbon monoxide CO. High-quality single-crystal SiC-4H films with thicknesses of up to 100 nm are grown on Si (111). Ellipsometric analysis showed that the optical constants of the SiC-4H films are significantly anisotropic. This is caused not only by the lattice hexagonality but also by a small amount (about 26%) of carbon atoms remaining in the film due to dilatation dipoles. It is shown that the optical constants of the carbon impurity correspond to strongly anisotropic highly oriented pyrolytic graphite.

Kukushkin, S. A., E-mail: kukushkin_s@yahoo.com; Osipov, A. V. [Russian Academy of Sciences, Institute of Problems of Machine Science (Russian Federation)

2013-12-15T23:59:59.000Z

486

STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS  

SciTech Connect

Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

2014-09-01T23:59:59.000Z

487

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector  

DOE Patents (OSTI)

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

Holland, Stephen Edward (Hercules, CA)

2000-02-15T23:59:59.000Z

488

Use of NMR Spectroscopy in the Synthesis and Characterization of Air-and Water-Stable Silicon Nanoparticles from Porous Silicon  

E-Print Network (OSTI)

of the nanoparticle field is focused on using semiconductors such as CdSe, CdS, and InP and inorganic oxides etching of p-type boron doped silicon as shown by has been used to prepare hydride-capped porous silicon

Augustine, Mathew P.

489

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-  

E-Print Network (OSTI)

Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips%; Venezuela, 15%; Canada, 8%; and other, 8%. Silicon metal: Brazil, 38%; South Africa, 24%; Canada, 16

490

Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens  

SciTech Connect

Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirement for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test methods have been developed that deliver accurate and repeatable data, which will be described.

Springer, J.; Allen, B.; Wriggins, W.; Kuzbyt, R.; Sinclair, R. [Core Systems, 1050 Kifer Road Sunnyvale, CA 94086 (United States); FI Silicon, 1050 Kifer Road Sunnyvale, CA 94086 (United States); Core Systems, 1050 Kifer Road Sunnyvale, CA 94086 (United States)

2012-11-06T23:59:59.000Z

491

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

492

Chemical vapor deposition of hydrogenated amorphous silicon from disilane  

SciTech Connect

The authors describe hydrogenated amorphous silicon (a-Si:H) thin films deposited at growth rates of 1 to 30 A/s by chemical vapor deposition (CVD) from disilane source gas at 24 torr total pressure in a tubular reactor. The effects of substrate temperature and gas holding time (flow rate) on film growth rate and effluent gas composition were measured at temperatures ranging from 360{sup 0} to 485{sup 0}C and gas holding times from 3 to 62s. Effluent gases determined by gas chromatography included silane, disilane and other higher order silanes. A chemical reaction engineering model, based on a silylene (SiH/sub 2/) insertion gas phase reaction network and film growth from both SiH/sub 2/ and high molecular weight silicon species, Si/sub n/H/sub 2n/, was developed. The model predictions were in good agreement with experimentally determined growth rates and effluent gas compositions.

Bogaert, R.J.; Russell, T.W.F.; Klein, M.T. (Delaware Univ., Newark, DE (USA). Dept. of Chemical Engineering); Rocheleau, R.E.; Baron, B.N. (Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion)

1989-10-01T23:59:59.000Z

493

Chemical vapor deposition of boron-doped hydrogenated amorphous silicon  

SciTech Connect

Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 /sup 0/C. A typical open circuit voltage in an all CVD p-i-n device is 0.70--0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8--0.83 V.

Ellis F.B. Jr.; Delahoy, A.E.

1985-07-15T23:59:59.000Z

494

First-principles Approaches to Simulate Lithiation in Silicon Electrodes  

E-Print Network (OSTI)

Silicon is viewed as an excellent electrode material for lithium batteries due to its high lithium storage capacity. Various Si nano-structures, such as Si nanowires, have performed well as lithium battery anodes and have opened up exciting opportunities for the use of Si in energy storage devices. The mechanism of lithium insertion and the interaction between Li and the Si electrode must be understood at the atomic level; this understanding can be achieved by first-principles simulation. Here, first-principles computations of lithiation in silicon electrodes are reviewed. The review focuses on three aspects: the various properties of bulk Li-Si compounds with different Li concentrations, the electronic structure of Si nanowires and Li insertion behavior in Si nanowires, and the dynamic lithiation process at the Li/Si interface. Potential study directions in this research field and difficulties that the field still faces are discussed at the end.

Zhang, Qianfan; Wang, Enge

2013-01-01T23:59:59.000Z

495

DECODING THE MESSAGE FROM METEORITIC STARDUST SILICON CARBIDE GRAINS  

SciTech Connect

Micron-sized stardust grains that originated in ancient stars are recovered from meteorites and analyzed using high-resolution mass spectrometry. The most widely studied type of stardust is silicon carbide (SiC). Thousands of these grains have been analyzed with high precision for their Si isotopic composition. Here we show that the distribution of the Si isotopic composition of the vast majority of stardust SiC grains carries the imprints of a spread in the age-metallicity distribution of their parent stars and of a power-law increase of the relative formation efficiency of SiC dust with the metallicity. This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modeling of dust condensation in stellar winds as a function of the metallicity.

Lewis, Karen M.; Lugaro, Maria; Gibson, Brad K.; Pilkington, Kate, E-mail: maria.lugaro@monash.edu, E-mail: karen.michelle.lewis@gmail.com, E-mail: bkgibson@uclan.ac.uk, E-mail: kpilkington@uclan.ac.uk [Monash Centre for Astrophysics (MoCA), Monash University, Clayton VIC 3800 (Australia)

2013-05-01T23:59:59.000Z

496

Decoding the message from meteoritic stardust silicon carbide grains  

E-Print Network (OSTI)

Micron-sized stardust grains that originated in ancient stars are recovered from meteorites and analysed using high-resolution mass spectrometry. The most widely studied type of stardust is silicon carbide (SiC). Thousands of these grains have been analysed with high precision for their Si isotopic composition. Here we show that the distribution of the Si isotopic composition of the vast majority of stardust SiC grains carry the imprints of a spread in the age-metallicity distribution of their parent stars and of a power-law increase of the relative formation efficiency of SiC dust with the metallicity. This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modelling of dust condensation in stellar winds as function of the metallicity.

Lewis, Karen M; Gibson, Brad K; Pilkington, Kate

2013-01-01T23:59:59.000Z

497

Chemical method for producing smooth surfaces on silicon wafers  

DOE Patents (OSTI)

An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

Yu, Conrad (Antioch, CA)

2003-01-01T23:59:59.000Z

498

Silicon buried gratings for dielectric laser electron accelerators  

SciTech Connect

This paper describes design and simulations of dielectric laser electron accelerators that achieve Gigavolt-per-meter (GV/m) accelerating gradients and wide electron channels (>1??m). The accelerator design is based on a silicon buried grating structure that enables flexible phase synchronization, large electron channel fields, and low standing-wave ratio in the material. This design increases the accelerating gradients to more than double those of reported quartz grating accelerators, thereby reducing the input laser fluence by 60% for the same accelerating gradient. With a 100 fs pulsed laser, our silicon buried gratings can achieve a maximum gradient of 1.1 GV/m, indicating that these accelerators have potential for numerous electron-accelerator applications.

Chang, Chia-Ming, E-mail: cachang@alumni.stanford.edu [Bell Labs, Alcatel-Lucent, 791 Holmdel Road, Holmdel, New Jersey 07733 (United States); Solgaard, Olav [E. L. Ginzton Lab., Stanford University, Stanford, California 94305 (United States)

2014-05-05T23:59:59.000Z

499

Nanostructured Silicon Membranes for Control of Molecular Transport  

SciTech Connect

A membrane that allows selective transport of molecular species requires precise engineering on the nanoscale. Membrane permeability can be tuned by controlling the physical structure of the pores. Here, a combination of electron-beam and optical lithography, along with cryogenic deep reactive ion etching, has been used to fabricate silicon membranes that are physically robust, have uniform pore-sizes, and are directly integrated into a microfluidic network. Additional reductions in pore size were achieved using plasma enhanced chemical vapor deposition of silicon dioxide to coat membrane surfaces. Cross sectioning of the membranes using focused ion beam milling was used to determine the physical shape of the membrane pores before and after coating.

Srijanto, Bernadeta R [ORNL] [ORNL; Retterer, Scott T [ORNL] [ORNL; Fowlkes, Jason Davidson [ORNL] [ORNL; Doktycz, Mitchel John [ORNL] [ORNL

2010-01-01T23:59:59.000Z

500

Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers  

SciTech Connect

Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

Myers, D. R.

2011-01-01T23:59:59.000Z