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Sample records for guiyang polysource silicon

  1. Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang...

    Open Energy Info (EERE)

    Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang Hi New Sunshine Technology Jump to: navigation, search Name: Guiyang Polysource Silicon Co Ltd (Formerly Jiayuan...

  2. Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang Hi New

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,SolarFERC Hydroelectric Projects | OpenGuinea-USAID

  3. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  4. Single crystalline mesoporous silicon nanowires

    E-Print Network [OSTI]

    Hochbaum, A.I.

    2010-01-01

    effects in highly porous crystalline silicon, Nature 1991,J. , Fabrication of single-crystalline silicon nanowires bySingle crystalline mesoporous silicon nanowires Allon I.

  5. Single crystalline mesoporous silicon nanowires

    E-Print Network [OSTI]

    Hochbaum, Allon

    2010-01-01

    Quantum Dots: A General crystalline silicon, Nature 1991,1998, 31, 1927-1949. single-crystalline silicon nanowires byof their facilities. Single crystalline mesoporous silicon

  6. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  7. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  8. Advanced silicon photonic modulators

    E-Print Network [OSTI]

    Sorace, Cheryl M

    2010-01-01

    Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

  9. Process for producing silicon

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Carleton, Karen L. (Boulder, CO)

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  10. Process for producing silicon

    DOE Patents [OSTI]

    Olson, J.M.; Carleton, K.L.

    1982-06-10

    A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  11. Electrodeposition of molten silicon

    DOE Patents [OSTI]

    De Mattei, Robert C. (Sunnyvale, CA); Elwell, Dennis (Palo Alto, CA); Feigelson, Robert S. (Saratoga, CA)

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  12. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  13. Silicon rich nitride for silicon based laser devices

    E-Print Network [OSTI]

    Yi, Jae Hyung

    2008-01-01

    Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light ...

  14. Silicon micro-mold

    DOE Patents [OSTI]

    Morales, Alfredo M. (Livermore, CA)

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  15. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A. (Albuquerque, NM); Seager, Carleton H. (Albuquerque, NM)

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  16. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  17. Measuring Speedy Electrons in Silicon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser, Supercomputer Measure Speedy Electrons in Silicon Laser, Supercomputer Measure Speedy Electrons in Silicon Simulations at NERSC Help Illuminate Attosecond Laser Experiment...

  18. Silicone-containing composition

    DOE Patents [OSTI]

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  19. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  20. Hybrid silicon evanescent approach to optical interconnects

    E-Print Network [OSTI]

    2009-01-01

    Big Island, HI, USA, 2006 Hybrid silicon evanescent approach10.1007/s00339-009-5118-1 Hybrid silicon evanescent approachthe recently developed hybrid silicon evanescent platform (

  1. Crystalline Silicon Photovoltaics Research

    Broader source: Energy.gov [DOE]

    DOE supports crystalline silicon photovoltaic (PV) research and development efforts that lead to market-ready technologies. Below are a list of the projects, summary of the benefits, and discussion...

  2. Fabrication and properties of microporous silicon 

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01

    structure as the wafer from which it was fabricated. Oxidization at 800'C converts the porous silicon totally to amorphous silicon dioxide. Oxidation at 600'C produces a mixture of crystalline silicon and amorphous silicon dioxide. The pore structure...

  3. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  4. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W. (Albuquerque, NM)

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  5. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  6. Fabrication of porous silicon membranes 

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01

    . Porous silicon layer is formed by the local dissolution which is initiated by the surface layer and is promoted by the hindrance layers composed of the silicic acid. Local etching or local dissolution is the cause of forming porous structure... of pores were 25 to 45 A with a mean value of 38 A. Microstructure of porous silicon studied by Besle et al. showed two distinct 17 patterns: the structure pattern of porous silicon film on heavily doped silicon and that on slightly doped silicon [26...

  7. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  8. Multicolored Vertical Silicon Nanowires

    SciTech Connect (OSTI)

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  9. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  10. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  11. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  12. A silicon electromechanical photodetector

    E-Print Network [OSTI]

    Tallur, Siddharth

    2013-01-01

    Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.

  13. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  14. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  15. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  16. Vertical silicon nanowire arrays for gas sensing

    E-Print Network [OSTI]

    Zhao, Hangbo

    2014-01-01

    The goal of this research was to fabricate and characterize vertically aligned silicon nanowire gas sensors. Silicon nanowires are very attractive for gas sensing applications and vertically aligned silicon nanowires are ...

  17. AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION

    E-Print Network [OSTI]

    Deng, Xunming

    improved, which may make them suitable for encapsulating solar cells once again. We have recently of terrestrial solar cells. It is well known that EVA turns yellow upon extended exposure to ultraviolet light-based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells

  18. Adhesion Impact of Silicone Contamination during Encapsulation...

    Office of Scientific and Technical Information (OSTI)

    Adhesion Impact of Silicone Contamination during Encapsulation. Citation Details In-Document Search Title: Adhesion Impact of Silicone Contamination during Encapsulation. Abstract...

  19. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  20. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  1. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Mendez, Victor P. (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  2. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  3. Cordierite silicon nitride filters

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  4. Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells

    E-Print Network [OSTI]

    Firestone, Jeremy

    ;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

  5. The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon

    E-Print Network [OSTI]

    The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon@ise.fhg.de Keywords: crystalline silicon, Czochralski, boron-oxygen defect, silicon interstitial Abstract. Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier

  6. Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using

    E-Print Network [OSTI]

    Tentzeris, Manos

    Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using grade silicon wafer (poxide layer have been developed using on a CMOS grade silicon substrate ( ~ 4 . 0 1Cl-cm) with an embedded thick silicon oxide layer using

  7. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01

    and Photovoltaic Performance . . . . . . . . . . . . . . .Amorphous Silicon as a Photovoltaic Material 2.1.2ii Photovoltaic Model . . . . . . . . . . .

  8. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1996-01-01

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  9. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  10. Ultraviolet selective silicon photodiode 

    E-Print Network [OSTI]

    Chintapalli, Koteswara Rao

    1992-01-01

    (' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe...Luation degrades by &legr(es during (xposure Io high-cncrgy photo(&s such as in ultraviolet light. The second approa?h is a S&:hottky-b))rricr Iype. ol' photodiodc consisting of a iranspar()nt, thin metal film [I I]. ln I. his d(vi?e, ii, is dif%?ult to a...

  11. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  12. Polarization manipulation in silicon photonics

    E-Print Network [OSTI]

    Su, Zhan, S.M. Massachusetts Institute of Technology

    2013-01-01

    Silicon photonics is moving fast toward industrialization. It satisfies the increasing demand for higher speed, larger bandwidth communication. Thus it has a wide range of applications including high-performance computing, ...

  13. Mechanical Dissipation in Silicon Flexures

    E-Print Network [OSTI]

    S. Reid; G. Cagnoli; D. R. M. Crooks; J. Hough; P. Murray; S. Rowan; M. M. Fejer; R. Route; S. Zappe

    2005-10-28

    The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92um thick single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to phi = 4.4E-7.

  14. Direct Production of Silicones From Sand

    SciTech Connect (OSTI)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  15. Silicon Tetrafluoride on Io

    E-Print Network [OSTI]

    Laura Schaefer; Bruce Fegley Jr

    2005-06-01

    Silicon tetrafluoride (SiF4) is observed in terrestrial volcanic gases and is predicted to be the major F - bearing species in low temperature volcanic gases on Io (Schaefer and Fegley, 2005b). SiF4 gas is also a potential indicator of silica-rich crust on Io. We used F/S ratios in terrestrial and extraterrestrial basalts, and gas/lava enrichment factors for F and S measured at terrestrial volcanoes to calculate equilibrium SiF4/SO2 ratios in volcanic gases on Io. We conclude that SiF4 can be produced at levels comparable to the observed NaCl/SO2 gas ratio. We also considered potential loss processes for SiF4 in volcanic plumes and in Io's atmosphere including ion-molecule reactions, electron chemistry, photochemistry, reactions with the major atmospheric constituents, and condensation. Photochemical destruction (tchem ~ 266 days) and/or condensation as Na2SiF6 (s) appear to be the major sinks for SiF4. We recommend searching for SiF4 with infrared spectroscopy using its 9.7 micron band as done on Earth.

  16. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  17. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA)

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  18. Hybrid Silicon Photonic Integrated Circuit Technology

    E-Print Network [OSTI]

    2013-01-01

    and J. E. Bowers, “Hybrid silicon evanescent devices,”and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescentColdren, and J. E. Bowers, “Hybrid III/V sili- con photonic

  19. Hybrid Silicon Photonics for Optical Interconnects

    E-Print Network [OSTI]

    2011-01-01

    Promising Technology for the hybrid silicon laser in 2007.Electrically pumped hybrid AlGaInAs-silicon evanescentA. Yariv, “Electrically pumped hybrid evanescent Si/InGaAsP

  20. Design of a silicon waver breaker

    E-Print Network [OSTI]

    Mukaddam, Kabir James, 1983-

    2005-01-01

    Usually multiple MEMS or IC devices are fabricated on a single silicon wafer. Manually separating the components from each other involves scribing and fracturing the silicon. This thesis presents a design for a tool to aid ...

  1. Nucleation and solidification of silicon for photovoltaics

    E-Print Network [OSTI]

    Appapillai, Anjuli T. (Anjuli Tara)

    2010-01-01

    The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

  2. System and method for liquid silicon containment

    SciTech Connect (OSTI)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  3. Silicon crystal growing by oscillating crucible technique

    DOE Patents [OSTI]

    Schwuttke, G.H.; Kim, K.M.; Smetana, P.

    1983-08-03

    A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

  4. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  5. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  6. Birefringence Measurements on Crystalline Silicon

    E-Print Network [OSTI]

    Krüger, Christoph; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2015-01-01

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $\\Delta\\, n \\approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  7. Silicon Photonics: The Inside Story

    E-Print Network [OSTI]

    Jalali, Bahram

    2008-01-01

    The electronic chip industry embodies the height of technological sophistication and economics of scale. Fabricating inexpensive photonic components by leveraging this mighty manufacturing infrastructure has fueled intense interest in silicon photonics. If it can be done economically and in an energy efficient manner, empowering silicon with optical functionality will bring optical communications to the realm of computers where limitations of metallic interconnects are threatening the industry's future. The field is making stunning progress and stands to have a bright future, as long as the community recognizes the real challenges, and maintains an open mind with respect to its applications. This talk will review recent 'game changing' developments and discuss promising applications beyond data communication. It will conclude with recent observation of extreme-value statistical behavior in silicon photonics, a powerful example of how scientific discoveries can unexpectedly emerge in the course of technology d...

  8. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  9. SILICON--1999 681 By Thomas S. Jones

    E-Print Network [OSTI]

    SILICON--1999 681 SILICON By Thomas S. Jones Domestic survey data and tables were prepared by Lisa in the foreign trade statistics. For 1999, an overall domestic silicon production of 423,000 metric tons (t led to ongoing legal actions. In the first part of 1999, of three domestic producers involved in civil

  10. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, S.W.

    1997-02-18

    A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

  11. SILANE SAFETY IN AMORPHOUS SILICON AND SILICON NITRIDE OPERATIONS

    E-Print Network [OSTI]

    industries in Europe, the United States, and Japan. As PV manufacturing is scaled-up to meet a growing demand) and amorphous silicon (a-Si). In this paper, we review established methods for using this gas safely; they include risk-prevention strategies, passive and active protection systems, outdoor storage, and adequate

  12. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  13. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  14. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  15. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  16. Dispersion toughened silicon carbon ceramics

    DOE Patents [OSTI]

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  17. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  18. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  19. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-04-28

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  20. The CDF silicon vertex trigger

    SciTech Connect (OSTI)

    B. Ashmanskas; A. Barchiesi; A. Bardi

    2003-06-23

    The CDF experiment's Silicon Vertex Trigger is a system of 150 custom 9U VME boards that reconstructs axial tracks in the CDF silicon strip detector in a 15 {mu}sec pipeline. SVT's 35 {mu}m impact parameter resolution enables CDF's Level 2 trigger to distinguish primary and secondary particles, and hence to collect large samples of hadronic bottom and charm decays. We review some of SVT's key design features. Speed is achieved with custom VLSI pattern recognition, linearized track fitting, pipelining, and parallel processing. Testing and reliability are aided by built-in logic state analysis and test-data sourcing at each board's input and output, a common inter-board data link, and a universal ''Merger'' board for data fan-in/fan-out. Speed and adaptability are enhanced by use of modern FPGAs.

  1. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    E-Print Network [OSTI]

    Mailoa, Jonathan P.

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband ...

  2. Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

    E-Print Network [OSTI]

    Weiss, Sharon

    Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation been suggested that gamma irradiation accelerates oxidation of porous silicon.5 Irradiation silicon samples that occurs over three decades of 10 keV x-ray irradiation. II. SAMPLE PREPARATION Silicon

  3. The ATLAS Silicon Pixel Sensors

    E-Print Network [OSTI]

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  4. Light Emission in Silicon from Carbon Nanotubes

    E-Print Network [OSTI]

    Gaufrès, Etienne; Noury, Adrien; Roux, Xavier Le; Rasigade, Gilles; Beck, Alexandre; Vivien, Laurent

    2015-01-01

    The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks to their ability to emit, modulate and detect light in the wavelength range of silicon transparency. We report the first integration of carbon nanotubes with silicon waveguides, successfully coupling their emission and absorption properties. A complete study of this coupling between carbon nanotubes and silicon waveguides was carried out, which led to the demonstration of the temperature-independent emission from carbon nanotubes in silicon at a wavelength of 1.3 {\\mu}m. This represents the first milestone in the development of photonics based on carbon nanotubes on silicon.

  5. Process for strengthening silicon based ceramics

    DOE Patents [OSTI]

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-04-06

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  6. Process for strengthening silicon based ceramics

    DOE Patents [OSTI]

    Kim, Hyoun-Ee (Oak Ridge, TN); Moorhead, A. J. (Knoxville, TN)

    1993-01-01

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  7. Method for fabricating pixelated silicon device cells

    DOE Patents [OSTI]

    Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

    2015-08-18

    A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

  8. Diamond-silicon carbide composite and method

    DOE Patents [OSTI]

    Zhao, Yusheng (Los Alamos, NM)

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  9. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOE Patents [OSTI]

    Natesan, K.

    1992-01-01

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  10. Toward accurate and large-scale silicon photonics

    E-Print Network [OSTI]

    Sun, Jie, Ph.D. Massachusetts Institute of Technology

    2013-01-01

    Silicon photonics, emerging from the interface of silicon technology and photonic technology, is expected to inherit the incredible integration ability of silicon technology that has boomed the microelectronic industry for ...

  11. THE STRUCTURE OF ULTRA-THIN OXIDE ON SILICON

    E-Print Network [OSTI]

    Krivanek, Ondrej L.

    2012-01-01

    Ultra-thin (10-lOOA) silicon oxide layers on silicon are ofcrystalline silicon. The oxide layer is seen to be sharplyundulation of the whole oxide layer with ~300A wavelength.

  12. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  13. Apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1986-05-20

    Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  14. ULTRATHIN FLEXIBLE CRYSTALLINE SILICON: MICROSYSTEMS ENABLED PHOTOVOLTAICS

    E-Print Network [OSTI]

    ULTRATHIN FLEXIBLE CRYSTALLINE SILICON: MICROSYSTEMS ENABLED PHOTOVOLTAICS Jose L. Cruz Photovoltaics (MEPV) is a technique to create solar cells relying on tools from the microsystems and integrated

  15. Engineering Metal Impurities in Multicrystalline Silicon Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar...

  16. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon...

    Office of Scientific and Technical Information (OSTI)

    Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint Bolen, M. L.; Grover, S.; Teplin, C. W.; Bobela, D.; Branz, H. M.; Stradins, P. 08 HYDROGEN; 14...

  17. Silicon Materials and Devices (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Silicon Materials and Devices that includes scope, core competencies and capabilities, and contact/web information.

  18. Silicon Materials and Devices (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its silicon materials and devices research. The scope and core competencies and capabilities are discussed.

  19. Process for Polycrystalline film silicon growth

    DOE Patents [OSTI]

    Wang, Tihu (Littleton, CO); Ciszek, Theodore F. (Evergreen, CO)

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  20. Protein separations using porous silicon membranes 

    E-Print Network [OSTI]

    Pass, Shannon Marie

    1992-01-01

    ) 61 IX LIST OF TABLES 1. The L9 Orthogonal Array 34 2. Experimental Factors and Levels . 3. Results of Silicon Etching Trials . 35 40 4. Results of Silicon Membrane Separation Experiments 44 5. Results of Single Solute Experiments Using... charge or as the absence of an electron in the crystal structure of silicon. The properties of boron doped siTicon are exploited experimentally by setting up an etch cell in which one surface of the silicon serves as the anode and by using...

  1. Solar cell with silicon oxynitride dielectric layer

    DOE Patents [OSTI]

    Shepherd, Michael; Smith, David D

    2015-04-28

    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0silicon oxynitride dielectric layer.

  2. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely...

  3. Holey Silicon as an Efficient Thermoelectric Material

    E-Print Network [OSTI]

    Tang, Jinyao

    2011-01-01

    Silicon as Efficient Thermoelectric Material Jinyao Tang 1,This work investigated the thermoelectric properties of thinat room temperature, the thermoelectric performance of HS is

  4. Synthesis and tribological behavior of silicon oxycarbonitride...

    Office of Scientific and Technical Information (OSTI)

    Article: Synthesis and tribological behavior of silicon oxycarbonitride thin films derived from poly(urea)methyl vinyl silazane. Citation Details In-Document Search Title:...

  5. Designing Silicon Nanostructures for High Energy Lithium Ion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Designing Silicon Nanostructures for High Energy Lithium Ion Battery Anodes Designing Silicon Nanostructures for High Energy Lithium Ion Battery Anodes 2012 DOE Hydrogen and Fuel...

  6. Low-temperature plasma-deposited silicon epitaxial films: Growth...

    Office of Scientific and Technical Information (OSTI)

    Low-temperature plasma-deposited silicon epitaxial films: Growth and properties Citation Details In-Document Search Title: Low-temperature plasma-deposited silicon epitaxial films:...

  7. Predicting fracture in micron-scale polycrystalline silicon MEMS...

    Office of Scientific and Technical Information (OSTI)

    Predicting fracture in micron-scale polycrystalline silicon MEMS structures. Citation Details In-Document Search Title: Predicting fracture in micron-scale polycrystalline silicon...

  8. Silicon Nanostructure-based Technology for Next Generation Energy...

    Office of Environmental Management (EM)

    Silicon Nanostructure-based Technology for Next Generation Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2013 DOE Hydrogen and Fuel Cells...

  9. Pore Collapse and Regrowth in Silicon Electrodes for Rechargeable...

    Office of Scientific and Technical Information (OSTI)

    Pore Collapse and Regrowth in Silicon Electrodes for Rechargeable Batteries Citation Details In-Document Search Title: Pore Collapse and Regrowth in Silicon Electrodes for...

  10. Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure...

    Office of Environmental Management (EM)

    2: Silicon Nanostructure-based Technology for Next Generation Energy Storage Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure-based Technology for Next...

  11. Design and Implementation of Silicon Nitride Valves for Heavy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Design and Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Poster presentation at the...

  12. Project Profile: Hybrid Organic Silicone HTF Utilizing Endothermic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hybrid Organic Silicone HTF Utilizing Endothermic Chemical Reactions for Latent Heat Storage Project Profile: Hybrid Organic Silicone HTF Utilizing Endothermic Chemical Reactions...

  13. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore »silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  14. Analog Optical Computing Primitives in Silicon Photonics

    E-Print Network [OSTI]

    Jiang, Yunshan; Jalali, Bahram

    2015-01-01

    Optical computing accelerators may help alleviate bandwidth and power consumption bottlenecks in electronics. We show an approach to implementing logarithmic-type analog co-processors in silicon photonics and use it to perform the exponentiation operation. The function is realized by exploiting nonlinear-absorption-enhanced Raman amplification saturation in a silicon waveguide.

  15. Preparation of silicon carbide fibers

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12

    Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

  16. Buckeye Silicon | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine: EnergyEnergyOhio: Energy ResourcesSilicon BeSi Jump to:

  17. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  18. Compensated amorphous-silicon solar cell

    DOE Patents [OSTI]

    Devaud, G.

    1982-06-21

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  19. Fabricating solar cells with silicon nanoparticles

    DOE Patents [OSTI]

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  20. Femtosecond-laser Microstructuring of Silicon: Dopants and Defects

    E-Print Network [OSTI]

    Mazur, Eric

    -laser Microstructuring of Silicon: Dopants and Defects Cynthia Friend Michael A. Sheehy Abstract This dissertation deals

  1. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    SciTech Connect (OSTI)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  2. Production of high specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1994-01-01

    A process for preparation of silicon-32 is provide and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  3. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

    1999-01-01

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  4. CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION

    E-Print Network [OSTI]

    CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high efficiency silicon thin-film solar cells. Industrially feasible epitaxy systems therefore

  5. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  6. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  7. Characterisation Studies of Silicon Photomultipliers

    E-Print Network [OSTI]

    Patrick Eckert; Hans-Christian Schultz-Coulon; Wei Shen; Rainer Stamen; Alexander Tadday

    2010-04-01

    This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.

  8. Characterisation Studies of Silicon Photomultipliers

    E-Print Network [OSTI]

    Eckert, Patrick; Shen, Wei; Stamen, Rainer; Tadday, Alexander

    2010-01-01

    This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.

  9. Optical absorption of silicon nanowires

    SciTech Connect (OSTI)

    Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Institut d'Electronique et de Microelectronique et de Nanotechnologies, IEMN (CNRS, UMR 8520), Groupe de Physique, Cite scientifique, avenue Poincare, 59652 Villeneuve d'Ascq (France); Lambert, Y.; Krzeminski, C.; Grandidier, B.; Stievenard, D.; Leveque, G.; Akjouj, A.; Pennec, Y.; Djafari-Rouhani, B. [Institut d'Electronique et de Microelectronique et de Nanotechnologies, IEMN (CNRS, UMR 8520), Groupe de Physique, Cite scientifique, avenue Poincare, 59652 Villeneuve d'Ascq (France)

    2012-08-01

    We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods: the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the finite difference time domain (FDTD) method, is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies that allow to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.

  10. Sampling Artifacts from Conductive Silicone Tubing

    E-Print Network [OSTI]

    Timko, Michael T.

    2009-01-01

    the soot from the filter with water and collecting it in aof water placed on the “heated silicone tubing” filter (water drop placed on the “unheated stainless steel tubing” filter

  11. Femtosecond laser processing of crystalline silicon

    E-Print Network [OSTI]

    Tran, D. V.

    This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) ...

  12. High index contrast platform for silicon photonics

    E-Print Network [OSTI]

    Akiyama, Shoji, 1972-

    2004-01-01

    This thesis focuses on silicon-based high index contrast (HIC) photonics. In addition to mature fiber optics or low index contrast (LIC) platform, which is often referred to as Planar Lightwave Cirrcuit (PLC) or Silica ...

  13. Texturization of multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Li, Dai-Yin

    2010-01-01

    A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

  14. Lithium ion batteries based on nanoporous silicon

    DOE Patents [OSTI]

    Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa

    2015-09-22

    A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

  15. Electrical characterization of germanium-silicon alloy 

    E-Print Network [OSTI]

    Kishore, Kumar P.

    1994-01-01

    . The fabrication procedure involved sputter deposition of silicon dioxide, oxide patterning, deposition of aluminum metal and metal patterning. Each test structure was square-shaped and consisted of eight sets of peripheral metal contacts. The results...

  16. Method for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1992-12-15

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  17. Apparatus for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1995-04-04

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  18. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1998-06-02

    A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

  19. INTERNATIONAL CONFERENCE ON EXOTIC FORMS OF SILICON

    E-Print Network [OSTI]

    ` e INTERNATIONAL CONFERENCE ON EXOTIC FORMS OF SILICON Renewable Energy Materials Research Science Laboratory TOYOTA Central R&D Labs., Inc. Japan George S. Nolas Department of Physics University of South

  20. Silicon cast wafer recrystallization for photovoltaic applications

    E-Print Network [OSTI]

    Hantsoo, Eerik T. (Eerik Torm)

    2008-01-01

    Current industry-standard methods of manufacturing silicon wafers for photovoltaic (PV) cells define the electrical properties of the wafer in a first step, and then the geometry of the wafer in a subsequent step. The ...

  1. An ultralow power athermal silicon modulator

    E-Print Network [OSTI]

    Timurdogan, Erman

    Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength–division–multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters ...

  2. Polycrystalline silicon resistor trimming by laser annealing 

    E-Print Network [OSTI]

    Crowley, Robert Terrence

    1989-01-01

    . ~ The single crystal band structure of silicon is applicable inside each grain. ~ Carrier trapping sites exist at the grain boundary with an area density of qq cm . These traps are filled with a density of n, cm ~ The traps are monovalent and located..., and (b) Kelvin resistors. luminum Top oxide Polysilicon Initial oxide ubstrate 26 Fig. 7. Cross sectional view of test cell. an oxidized silicon wafer. The polysilicon was oxidized for passivation, and contact windows were etched for the metal...

  3. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    SciTech Connect (OSTI)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  4. Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G

    2014-01-14

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  5. CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown silicon nitride layers can lead to a significant improvement in surface recombination at lightly doped of a tunnel oxide, a silicon nitride layer and optionally, a barrier oxide or other dielectric material. As

  6. Combustion Synthesis of Silicon Carbide 389 Combustion Synthesis of Silicon Carbide

    E-Print Network [OSTI]

    Mukasyan, Alexander

    Combustion Synthesis of Silicon Carbide 389 X Combustion Synthesis of Silicon Carbide Alexander S. Mukasyan University of Notre Dame USA 1. Introduction Combustion synthesis (CS) is an effective technique by which combustion synthesis can occur: self - propagating high-temperature synthesis (SHS) and volume

  7. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G. (Gettysburg, PA)

    2011-11-01

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  8. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon 

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07

    effect were also investigated. It has been demonstrated that a 30 nm thick amorphous silicon could be transformed into polycrystalline with 70%-80% of crystalline volume fraction in a short time. The thin-film polycrystalline silicon solar cells were...

  9. BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS

    E-Print Network [OSTI]

    BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS F. Haase contact cells. Kraiem et al [7] made a back contact thin film monocrystalline solar cell with cell), Am Ohrberg 1, D-31860 Emmerthal, Germany ABSTRACT We develop a back contact monocrystalline thin-film

  10. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  11. Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

    DOE Patents [OSTI]

    Branagan, Daniel J. (Idaho Falls, ID); Hyde, Timothy A. (Idaho Falls, ID); Fincke, James R. (Los Alamos, NM)

    2008-03-11

    The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

  12. Silicon-based nanoenergetic composites

    SciTech Connect (OSTI)

    Asay, Blaine; Son, Steven; Mason, Aaron; Yarrington, Cole; Cho, K Y; Gesner, J; Yetter, R A

    2009-01-01

    Fundamental combustion properties of silicon-based nano-energetic composites was studied by performing equilibrium calculations, 'flame tests', and instrumented burn-tube tests. That the nominal maximum flame temperature and for many Si-oxidizer systems is about 3000 K, with exceptions. Some of these exceptions are Si-metal oxides with temperatures ranging from 2282 to 2978 K. Theoretical maximum gas production of the Si composites ranged from 350-6500 cm{sup 3}/g of reactant with NH{sub 4}ClO{sub 4} - Si producing the most gas at 6500 cm{sup 3}/g and Fe{sub 2}O{sub 3} producing the least. Of the composites tested NH{sub 4}ClO{sub 4} - Si showed the fastest burning rates with the fastest at 2.1 km/s. The Si metal oxide burning rates where on the order of 0.03-75 mls the slowest of which was nFe{sub 2}O{sub 3} - Si.

  13. Amorphous silicon detectors in positron emission tomography

    SciTech Connect (OSTI)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  14. Silicon ball grid array chip carrier

    DOE Patents [OSTI]

    Palmer, David W. (Albuquerque, NM); Gassman, Richard A. (Greensboro, NC); Chu, Dahwey (Albuquerque, NM)

    2000-01-01

    A ball-grid-array integrated circuit (IC) chip carrier formed from a silicon substrate is disclosed. The silicon ball-grid-array chip carrier is of particular use with ICs having peripheral bond pads which can be reconfigured to a ball-grid-array. The use of a semiconductor substrate such as silicon for forming the ball-grid-array chip carrier allows the chip carrier to be fabricated on an IC process line with, at least in part, standard IC processes. Additionally, the silicon chip carrier can include components such as transistors, resistors, capacitors, inductors and sensors to form a "smart" chip carrier which can provide added functionality and testability to one or more ICs mounted on the chip carrier. Types of functionality that can be provided on the "smart" chip carrier include boundary-scan cells, built-in test structures, signal conditioning circuitry, power conditioning circuitry, and a reconfiguration capability. The "smart" chip carrier can also be used to form specialized or application-specific ICs (ASICs) from conventional ICs. Types of sensors that can be included on the silicon ball-grid-array chip carrier include temperature sensors, pressure sensors, stress sensors, inertia or acceleration sensors, and/or chemical sensors. These sensors can be fabricated by IC processes and can include microelectromechanical (MEM) devices.

  15. Iron-oxide catalyzed silicon photoanode for water splitting

    E-Print Network [OSTI]

    Jun, Kimin

    2011-01-01

    This thesis presents an integrated study of high efficiency photoanodes for water splitting using silicon and iron-oxide. The fundamental limitations of silicon to water splitting applications were overcome by an ultrathin ...

  16. Sputtered silicon oxynitride for microphotonics : a materials study

    E-Print Network [OSTI]

    Sandland, Jessica Gene, 1977-

    2005-01-01

    Silicon oxynitride (SiON) is an ideal waveguide material because the SiON materials system provides substantial flexibility in composition and refractive index. SiON can be varied in index from that of silicon dioxide ...

  17. Flaw-limited transport in germanium-on-silicon photodiodes

    E-Print Network [OSTI]

    Orcutt, Jason S. (Jason Scott)

    2008-01-01

    Epitaxial germanium growth on silicon substrates has enabled a new class of photodiodes that can be integrated with traditional silicon electronics. Previous workers using lowthroughput growth techniques have demonstrated ...

  18. Harmful Shunting Mechanisms Found in Silicon Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    Scientists developed near-field optical microscopy for imaging electrical breakdown in solar cells and identified critical electrical breakdown mechanisms operating in industrial silicon and epitaxial silicon solar cells.

  19. And the Award Goes to... Silicon Ink Solar Technology Supported...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator...

  20. NREL: Technology Transfer - The Quest for Inexpensive Silicon...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Quest for Inexpensive Silicon Solar Cells Get the Adobe Flash Player to see this video. In this video, NREL scientists Howard Branz and Chaz Teplin talk more about the silicon...

  1. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    using photoemission electron microscopes at ALS Beamlines 7.3.1 and 11.0.1. From Sand to Processor Modern electronic integrated circuits are made of silicon. Silicon is the...

  2. Process for manufacture of semipermeable silicon nitride membranes

    DOE Patents [OSTI]

    Galambos, Paul Charles; Shul, Randy J.; Willison, Christi Gober

    2003-12-09

    A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

  3. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  4. Porous silicon membranes as ultrafiltration devices: a feasibility study 

    E-Print Network [OSTI]

    Hong, Xiangrong

    1993-01-01

    in the integrated circuits. According to research results, porous silicon layers are formed by local dissolution of silicon during anodization in hydrofluoric acid solution. Memming and Schwandt (1966) proposed the following model for the etching process... results in the formation of the etched pores. Beale (1984) investigated the microstructure of porous silicon using cross-sectional transmission electron microscopy. The studies show that the structure of porous silicon is not perfectly cylindrical...

  5. Efficiency of silicon solar cells containing chromium

    DOE Patents [OSTI]

    Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

    1982-01-01

    Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

  6. Electrically tunable hot-silicon terahertz attenuator

    SciTech Connect (OSTI)

    Wang, Minjie; Vajtai, Robert; Ajayan, Pulickel M.; Kono, Junichiro

    2014-10-06

    We have developed a continuously tunable, broadband terahertz attenuator with a transmission tuning range greater than 10{sup 3}. Attenuation tuning is achieved electrically, by simply changing the DC voltage applied to a heating wire attached to a bulk silicon wafer, which controls its temperature between room temperature and ?550?K, with the corresponding free-carrier density adjusted between ?10{sup 11?}cm{sup ?3} and ?10{sup 17?}cm{sup ?3}. This “hot-silicon”-based terahertz attenuator works most effectively at 450–550?K (corresponding to a DC voltage variation of only ?7?V) and completely shields terahertz radiation above 550?K in a frequency range of 0.1–2.5 THz. Both intrinsic and doped silicon wafers were tested and demonstrated to work well as a continuously tunable attenuator. All behaviors can be understood quantitatively via the free-carrier Drude model taking into account thermally activated intrinsic carriers.

  7. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOE Patents [OSTI]

    Lowden, Richard A. (Powell, TN)

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  8. ARC Centre of Excellence for Advanced Silicon Photovoltaics

    E-Print Network [OSTI]

    New South Wales, University of

    ARC Centre of Excellence for Advanced Silicon Photovoltaics and Photonics Annual Report 2005 ARC Centre of Excellence for Advanced Silicon Photovoltaics and Photonics Annual Report 2005 #12;Centre of Excellence for Advanced Silicon Photovoltaics and Photonics is a Centre of Excellence of The Australian

  9. Silicon nitride ceramic having high fatigue life and high toughness

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  10. Silicon-nitride and metal composite

    DOE Patents [OSTI]

    Landingham, Richard L. (Livermore, CA); Huffsmith, Sarah A. (Urbana, IL)

    1981-01-01

    A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

  11. Superconductivity observed in platinum-silicon interface

    SciTech Connect (OSTI)

    Kuo, Pai-Chia, E-mail: paichia@phys.sinica.edu.tw [Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Chun-Wei [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Ku-Pin; Shiue, Jessie, E-mail: yshiue@phys.sinica.edu.tw [Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)

    2014-05-26

    We report the discovery of superconductivity with an onset temperature of ?0.6?K in a platinum-silicon interface. The interface was formed by using a unique focused ion beam sputtering micro-deposition method in which the energies of most sputtered Pt atoms are ?2.5?eV. Structural and elemental analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy reveal a???7?nm interface layer with abundant Pt, which is the layer likely responsible for the superconducting transport behavior. Similar transport behavior was also observed in a gold-silicon interface prepared by the same technique, indicating the possible generality of this phenomenon.

  12. Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1982-01-01

    An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

  13. Process for forming a porous silicon member in a crystalline silicon member

    DOE Patents [OSTI]

    Northrup, M. Allen (Berkeley, CA); Yu, Conrad M. (Antioch, CA); Raley, Norman F. (Danville, CA)

    1999-01-01

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

  14. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  15. Laser MicroChemical Shaping of Silicon

    E-Print Network [OSTI]

    Burns, Michael J.

    Laser MicroChemical Shaping of Silicon MURI Workshop Feb 28, 2005 Michael J. Burns, Ph.D. LMC Product Manager #12;FEI Copyright © 2005 Vectra LMC 9900 2 Laser Micro Chemical (LMC) ·Use of laser light to induce local chemical reactions. ·Both Laser Chemical Etching (LCE) and Laser Chemical Deposition (LCD

  16. Silicon on insulator achieved using electrochemical etching

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1997-01-01

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50.degree. C. or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense.

  17. Silicon on insulator achieved using electrochemical etching

    DOE Patents [OSTI]

    McCarthy, A.M.

    1997-10-07

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

  18. Accurate performance measurement of silicon solar cells

    E-Print Network [OSTI]

    Accurate performance measurement of silicon solar cells William Murray Keogh July 2001 A thesis is an important part of the solar cell manufacturing process. Two classes of measurement can be considered accuracy. The light source is very important when calibrating solar cells. Commonly used light sources

  19. Metal electrode for amorphous silicon solar cells

    DOE Patents [OSTI]

    Williams, Richard (Princeton, NJ)

    1983-01-01

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  20. Silicene: Graphene's silicon cousin Xining Zang

    E-Print Network [OSTI]

    Budker, Dmitry

    Germanene #12;Limit of Moore's Law in Bulk Material To break the limit Single layer 2D graphene Silicene Bandstructure calculated by ab initio #12;Summary · Silicene and germanene 2D semiconductor · HoneycombSilicene: Graphene's silicon cousin Xining Zang Graduate Student ME @Berkeley 05/02/2013 #12

  1. Heterogeneous lithium niobate photonics on silicon substrates

    E-Print Network [OSTI]

    Fathpour, Sasan

    /waveguide on silicon," J. Lightwave Technol. 25(7), 1826­1831 (2007). 4. M. J. Weber, Handbook of Optical Materials and selective oxidation of refractory metals. The heterogeneous photonic platform is employed to demonstrate as a new electro-optic material," Nature 441(7090), 199­202 (2006). 7. K. K. Tsia, S. Fathpour, and B

  2. Methanol Steam Reformer on a Silicon Wafer

    SciTech Connect (OSTI)

    Park, H; Malen, J; Piggott, T; Morse, J; Sopchak, D; Greif, R; Grigoropoulos, C; Havstad, M; Upadhye, R

    2004-04-15

    A study of the reforming rates, heat transfer and flow through a methanol reforming catalytic microreactor fabricated on a silicon wafer are presented. Comparison of computed and measured conversion efficiencies are shown to be favorable. Concepts for insulating the reactor while maintaining small overall size and starting operation from ambient temperature are analyzed.

  3. Silicon Wafer Processing Dr. Seth P. Bates

    E-Print Network [OSTI]

    Colton, Jonathan S.

    of the few markets in which, as time passes, the power and capacity of the products grows steadily, while to successfully transform the silicon into ICs require an absolute absence of contaminants. Thus, the process the cost of that power and capacity drops. Today, only twenty years later, we are continually pushing

  4. High Q silicon carbide microdisk resonator

    SciTech Connect (OSTI)

    Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X.-L.; Lin, Qiang

    2014-05-05

    We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12?×?10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

  5. Nanoparticle-based etching of silicon surfaces

    DOE Patents [OSTI]

    Branz, Howard (Boulder, CO); Duda, Anna (Denver, CO); Ginley, David S. (Evergreen, CO); Yost, Vernon (Littleton, CO); Meier, Daniel (Atlanta, GA); Ward, James S. (Golden, CO)

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  6. Application Of Optical Processing For Growth Of Silicon Dioxide

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1997-06-17

    A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

  7. Application of optical processing for growth of silicon dioxide

    DOE Patents [OSTI]

    Sopori, B.L.

    1997-06-17

    A process for producing a silicon dioxide film on a surface of a silicon substrate is disclosed. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm{sup 2} to about 6 watts/cm{sup 2} for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm{sup 2} for growth of a 100{angstrom}-300{angstrom} film at a resultant temperature of about 400 C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO{sub 2}/Si interface to be very low. 1 fig.

  8. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    SciTech Connect (OSTI)

    Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

    2014-10-27

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ?100??s or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1??m of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461??s. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  9. Superconductive silicon nanowires using gallium beam lithography.

    SciTech Connect (OSTI)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  10. Microwave-cut silicon layer transfer

    SciTech Connect (OSTI)

    Thompson, D.C.; Alford, T.L.; Mayer, J.W.; Hochbauer, T.; Nastasi, M.; Lau, S.S.; Theodore, N. David; Henttinen, K.; Suni, Ilkka; Chu, Paul K. [Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287-6006 (United States); Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States); Department of Electrical and Computer Engineering, University of California at San Diego, San Diego, California 92093 (United States); Advanced Products Research and Development Laboratory, Freescale Semiconductor Incorporated, 2100 East Elliot Road, Tempe, Arizona 85284 (United States); VTT Centre for Microelectronics, P.O. Box 1208, 02044 VTT (Finland); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

    2005-11-28

    Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

  11. Fabrication of 3D Silicon Sensors

    SciTech Connect (OSTI)

    Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; Kenney, C.; Hasi, J.; Da Via, C.; Parker, S.I.; /Hawaii U.

    2012-06-06

    Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

  12. Advances in amorphous silicon photovoltaic technology

    SciTech Connect (OSTI)

    Carlson, D.E.; Rajan, K.; Arya, R.R.; Willing, F.; Yang, L.

    1998-10-01

    With the advent of new multijunction thin film solar cells, amorphous silicon photovoltaic technology is undergoing a commercial revival with about 30 megawatts of annual capacity coming on-line in the next year. These new {ital a}{endash}Si multijunction modules should exhibit stabilized conversion efficiencies on the order of 8{percent}, and efficiencies over 10{percent} may be obtained in the next several years. The improved performance results from the development of amorphous and microcrystalline silicon alloy films with improved optoelectronic properties and from the development of more efficient device structures. Moreover, the manufacturing costs for these multijunction modules using the new large-scale plants should be on the order of {dollar_sign}1 per peak watt. These new modules may find widespread use in solar farms, photovoltaic roofing, as well as in traditional remote applications. {copyright} {ital 1998 Materials Research Society.}

  13. Stochastic modelling of silicon nanoparticle synthesis

    E-Print Network [OSTI]

    Menz, William Jefferson

    2014-01-07

    - ical and chemical processes in the soil may form inorganic nanoparticles [9], and organic structures such as viruses are often considered to be a type of nanoparticle [43]. Regardless of their origin, nanoparticles are of intense interest due... reported [75, 113]. Despite this, the product properties can be tightly con- trolled [56], and highly spherical particles, such as those in Figure 2.5, can be obtained. Production of silicon nanoparticles through laser pyrolysis typically uses a CO2 laser...

  14. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1995-03-28

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  15. Status of the CDF silicon detector

    SciTech Connect (OSTI)

    Grinstein, Sebastian; /Harvard U.

    2006-05-01

    The CDF Run II silicon micro-strip detector is an essential part of the heavy flavor tagging and forward tracking capabilities of the experiment. Since the commissioning period ended in 2002, about 85% of the 730 k readout channels have been consistently provided good data. A summary of the recent improvements in the DAQ system as well as experience of maintaining and operating such a large, complex detector are presented.

  16. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1995-01-01

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  17. Photovoltaic Silicon Cell Basics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills andOrder 422.1, CONDUCTCriticalEnergySilicon Cell Basics

  18. Silicon micro-mold and method for fabrication

    SciTech Connect (OSTI)

    Morales, Alfredo M.

    2005-01-11

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon micro-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  19. Porous siliconformation and etching process for use in silicon micromachining

    DOE Patents [OSTI]

    Guilinger, Terry R. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Martin, Jr., Samuel B. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

    1991-01-01

    A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

  20. Copper-assisted, anti-reflection etching of silicon surfaces

    DOE Patents [OSTI]

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  1. Diamond-Silicon Carbide Composite And Method For Preparation Thereof

    DOE Patents [OSTI]

    Qian, Jiang (Los Alamos, NM); Zhao, Yusheng (Los Alamos, NM)

    2005-09-06

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  2. Retrograde Melting and Internal Liquid Gettering in Silicon

    SciTech Connect (OSTI)

    Hudelson, Steve; Newman, Bonna K.; Bernardis, Sarah; Fenning, David P.; Bertoni, Mariana I.; Marcus, Matthew A.; Fakra, Sirine C.; Lai, Barry; Buonassisi, Tonio

    2011-07-01

    Retrograde melting (melting upon cooling) is observed in silicon doped with 3d transition metals, via synchrotron-based temperature-dependent X-ray microprobe measurements. Liquid metal-silicon droplets formed via retrograde melting act as efficient sinks for metal impurities dissolved within the silicon matrix. Cooling results in decomposition of the homogeneous liquid phase into solid multiple-metal alloy precipitates. These phenomena represent a novel pathway for engineering impurities in semiconductor-based systems.

  3. Dopant activation in ion implanted silicon by microwave annealing

    SciTech Connect (OSTI)

    Alford, T. L.; Thompson, D. C.; Mayer, J. W. [School of Materials, Arizona State University, Tempe, Arizona 85287 (United States); Theodore, N. David [Silicon Technology Solutions, Freescale Semiconductor Inc., 2100 East Elliot Rd., Tempe, Arizona 85284 (United States)

    2009-12-01

    Microwaves are used as a processing alternative for the electrical activation of ion implanted dopants and the repair of ion implant damage within silicon. Rutherford backscattering spectra demonstrate that microwave heating reduces the damage resulting from ion implantation of boron or arsenic into silicon. Cross-section transmission electron microscopy and selective area electron diffraction patterns demonstrate that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Sheet resistance readings indicate the time required for boron or arsenic electrical activation within implanted silicon. Hall measurements demonstrate the extent of dopant activation after microwave heating of implanted silicon. Physical and electrical characterization determined that the mechanism of recrystallization in arsenic implanted silicon is solid phase epitaxial regrowth. The boron implanted silicon samples did not result in enough lattice damage to amorphize the silicon lattice and resulted in low boron activation during microwave annealing even though recrystallization of the Si lattice damage did take place. Despite low boron activation levels, the level of boron activation in this work was higher than that expected from traditional annealing techniques. The kinetics of microwave heating and its effects on implanted Si are also discussed.

  4. Enhancing the Sensitivity of Label-free Silicon Photonic Biosensors...

    Office of Scientific and Technical Information (OSTI)

    Enhancing the Sensitivity of Label-free Silicon Photonic Biosensors through Increased Probe Molecule Density Citation Details In-Document Search Title: Enhancing the Sensitivity of...

  5. Atomic Layer Deposition for Stabilization of Amorphous Silicon...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Documents & Publications Nanostructured Metal Oxide Anodes Atomic Layer Deposition for Stabilization of Silicon Anodes Development of Industrially Viable Battery Electrode Coatings...

  6. Interstitial diffusion of ion-implanted boron in crystalline silicon

    E-Print Network [OSTI]

    O. I. Velichko; A. P. Kavaliova

    2012-07-03

    Modeling of the long-range migration of boron interstitials during low temperature annealing of ion-implanted silicon crystals has been carried out.

  7. Fact Sheet: Award-Winning Silicon Carbide Power Electronics ...

    Energy Savers [EERE]

    magnetic energy storage (SMES), power electronics, and control systems, visit the Energy Storage page. Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October...

  8. Process and apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1988-06-28

    Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  9. Silicon Nanostructure-based Technology for Next Generation Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    density and safety performance Activities for Next 12 Months Future Work: Meeting the energy density performance and cycle life targets for silicon anode cells will double the...

  10. Method and apparatus for producing high purity silicon

    DOE Patents [OSTI]

    Olson, J.M.

    1983-05-27

    A method for producing high purity silicon includes forming a copper silicide alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

  11. Method and apparatus for producing high purity silicon

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO)

    1984-01-01

    A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

  12. Thin Silicon MEMS Contact-Stress Sensor Kotovksy, J; Tooker,...

    Office of Scientific and Technical Information (OSTI)

    A; Horsley, D 42 ENGINEERING; 42 ENGINEERING; ACCURACY; ACTUATORS; SILICON This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid...

  13. Thin Silicon MEMS Contact-Stress Sensor Kotovsky, J; Tooker,...

    Office of Scientific and Technical Information (OSTI)

    ACCURACY; ACTUATORS; CALIBRATION; DIAPHRAGM; SILICON; STABILITY; THICKNESS This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid...

  14. Thin Silicon MEMS Contact-Stress Sensor Kotovsky, J; Tooker,...

    Office of Scientific and Technical Information (OSTI)

    LIFETIME; PACKAGING; PERFORMANCE; SILICON; THICKNESS This work offers the first, thin, MEMS contact-stress (CS) sensor capable of accurate in situ measruement of time-varying,...

  15. Synthesis and Characterization of Silicon Clathrates for Anode...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Characterization of Silicon Clathrates for Anode Applications in Lithium-Ion Batteries 2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual...

  16. GCL Solar Energy Technology Holdings formerly GCL Silicon aka...

    Open Energy Info (EERE)

    GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

  17. Building a linker library for silicon nitride window membrane...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building a linker library for silicon nitride window membrane functionalization The research in the Emergent Magnetic and Atomic Structures Group is aimed at determining the nature...

  18. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

    DOE Patents [OSTI]

    Mahan, Archie Harvin (Golden, CO); Molenbroek, Edith C. (Boulder, CO); Nelson, Brent P. (Golden, CO)

    1998-01-01

    A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.

  19. Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems

    E-Print Network [OSTI]

    Zhang, Teresa Weirui

    2011-01-01

    microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

  20. Dynamic Pricing with Limited Supply Moshe Babaioff, Microsoft Research Silicon Valley, Mountain View CA, USA

    E-Print Network [OSTI]

    Fiat, Amos

    Dynamic Pricing with Limited Supply Moshe Babaioff, Microsoft Research Silicon Valley, Mountain University, Ithaca NY, USA Aleksandrs Slivkins, Microsoft Research Silicon Valley, Mountain View CA, USA We

  1. Jefferson Lab Signs Contract Wth SensL For Silicon Photomultiplier...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    articlesjefferson-lab-signs-contract-wth-sensl-silicon-photomultiplier-technology-photonics-o... Jefferson Lab Signs Contract Wth SensL For Silicon Photomultiplier Technology...

  2. NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-08-01

    Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

  3. DOE-funded Silicon-Graphene Research Leads to Chicago-based Technology...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE-funded Silicon-Graphene Research Leads to Chicago-based Technology Startup Graduate students at Northwestern University are commercializing a silicon (Si)-graphene technology...

  4. Mechanical properties and microstructures of dual phase steels containing silicon, aluminum and molybdenum

    E-Print Network [OSTI]

    Neill, Thomas John O'

    2011-01-01

    AND MICROSTRUCTURES OF DUAL PHASE STEELS CONTAINING SILICON,and Microstructures of Dual Phase Steels Containing Silicon,microstructures of selected dual-phase steels in which the

  5. Silicon And Silicon-germanium Epitaxy For Quantum Dot Device Fabrications

    E-Print Network [OSTI]

    as they provide highly tunable structures for trapping and manipu- lating individual electrons/silicon- germanium material heterosystem. We describe the growth of two-dimensional electron gas structures advisor Professor James C. Sturm, whose perpetual enthusiasm, stimulating insight, and constant

  6. SILICON PHOTONIC MICRORING LINKS FOR HIGH-BANDWIDTH-DENSITY,

    E-Print Network [OSTI]

    Bergman, Keren

    /O ................................................................................................................................................................................................................... SILICON PHOTONIC MICRORINGS HAVE DRAWN INTEREST IN RECENT YEARS AS POTENTIAL BUILDING BLOCKS FOR HIGH HIGHLIGHT KEY DEVICE ATTRIBUTES THAT REQUIRE SIGNIFICANT ADVANCEMENT TO REALIZE SUB-PJ/BIT SCALE OPTICAL envelope.1 Researchers have touted silicon microring modulators as ultra-low-power wavelength- division

  7. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOE Patents [OSTI]

    Arya, Rajeewa R. (Doylestown, PA)

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  8. Electronic Supplementary Material Scalable preparation of porous silicon nanoparticles and

    E-Print Network [OSTI]

    Zhou, Chongwu

    Nano Res. Electronic Supplementary Material Scalable preparation of porous silicon nanoparticles with reduced graphene oxide Figure S2 TEM image of porous silicon nanoparticles after carbon coating and graphene wrapping. #12;www.theNanoResearch.comwww.Springer.com/journal/12274 | Nano R

  9. Lithium-Assisted Electrochemical Welding in Silicon Nanowire Battery Electrodes

    E-Print Network [OSTI]

    Li, Teng

    Lithium-Assisted Electrochemical Welding in Silicon Nanowire Battery Electrodes Khim Karki, Eric of lithium- assisted welding between physically contacted silicon nano- wires (SiNWs) induced by electrochemical lithiation and delithiation. This electrochemical weld between two SiNWs demonstrates facile

  10. Field emission study of cobalt ion implanted porous silicon 

    E-Print Network [OSTI]

    Liu, Hongbiao

    1995-01-01

    as an electrode in field emission applications. In this project, the formation of a CoSi2, conducting layer on porous silicon by high dose ion implantation while preserving the pore structure and field emission properties of the underlying porous silicon...

  11. Low cost routes to high purity silicon and derivatives thereof

    DOE Patents [OSTI]

    Laine, Richard M; Krug, David James; Marchal, Julien Claudius; Mccolm, Andrew Stewart

    2013-07-02

    The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon).

  12. INVESTIGATION OF IONIC CONTAMINATION REMOVAL FROM SILICON DIOXIDE SURFACES

    E-Print Network [OSTI]

    Suni, Ian Ivar

    INVESTIGATION OF IONIC CONTAMINATION REMOVAL FROM SILICON DIOXIDE SURFACES H. Lin, A. A. Busnaina, and I. I. Suni T he removal of ionic contaminants from silicon surfaces surface contamination level canM Communications L td. INTRODUCTION with increasing frequency and power, and decreases Contamination removal is one

  13. Fracture of crystalline silicon nanopillars during electrochemical lithium insertion

    E-Print Network [OSTI]

    Cui, Yi

    - chanism for energy storage is the insertion of secondary species into solid electrodes, as opposedFracture of crystalline silicon nanopillars during electrochemical lithium insertion Seok Woo Leea ion battery plasticity silicon anode In modern high-energy density battery systems, the primary me

  14. Robustness of amorphous silicon during the initial lithiation/ delithiation cycle

    E-Print Network [OSTI]

    Cui, Yi

    technology in applications requiring lightweight and high-power rechargeable energy storage [1Robustness of amorphous silicon during the initial lithiation/ delithiation cycle Lucas A. Berla a g h l i g h t s We probe the lithiation and delithiation behavior of amorphous silicon micropillars

  15. Lithium Insertion In Silicon Nanowires: An ab Initio Study

    E-Print Network [OSTI]

    Cui, Yi

    opportunities for energy storage. However, a systematic theoretical study on lithium insertion in SiNWs remains storage devices. Silicon has the highest known specific charge capacity (4200 mAh/g), which is 10 timesLithium Insertion In Silicon Nanowires: An ab Initio Study Qianfan Zhang, Wenxing Zhang, Wenhui Wan

  16. High Performance Graphene Transistors on Silicon Professor Xu Jianbin

    E-Print Network [OSTI]

    Huang, Jianwei

    High Performance Graphene Transistors on Silicon Professor Xu Jianbin Graphene composed of one nanoelectronics. In particular, the mobility of Graphene, which is a measure of how easily electrons can start for use in post-silicon electronics. However, fabrication of the graphene-based electronic devices

  17. Back-contacted back-junction silicon solar cells

    E-Print Network [OSTI]

    Johansen, Tom Henning

    electricity from BC-BJ silicon solar cells cost-competitive with electBack-contacted back-junction silicon solar cells Krister Mangersnes THESIS submitted in partial nearly four years as a Ph.D. student at the Institute for Energy Technology (IFE), Department of Solar

  18. Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics

    E-Print Network [OSTI]

    Mazur, Eric

    Femtosecond Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics A thesis presented Laser Ablation of Silicon: Nanoparticles, Doping and Photovoltaics Eric Mazur Brian R. Tull Abstract irradiated surface layer to the grain boundaries. #12;iv Lastly, we measure the photovoltaic properties

  19. Molecular hydrogen traps within silicon B. Hourahine a,1

    E-Print Network [OSTI]

    Jones, Robert

    Molecular hydrogen traps within silicon B. Hourahine a,1 , R. Jones a,1 , S. ¨Oberg b,2 , P. R on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi­level position

  20. Lithium-Assisted Electrochemical Welding in Silicon Nanowire Battery Electrodes

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Lithium-Assisted Electrochemical Welding in Silicon Nanowire Battery Electrodes Khim Karki, Eric-healing, interfacial lithium diffusivity, in situ TEM, lithium-ion battery Silicon is an auspicious candidate to replace today's widely utilized graphitic anodes in lithium ion batteries because its specific energy

  1. Natural Silicon Complexes DOI: 10.1002/anie.201005792

    E-Print Network [OSTI]

    Baik, Mu-Hyun

    examples of silicon complexes of natural products that are stable under physio- logical conditionsNatural Silicon Complexes DOI: 10.1002/anie.201005792 The E. coli Siderophores Enterobactin of soluble iron is as low as 10À10 m at pH 7.4.[1a] To extract iron from the environment, bacteria and fungi

  2. Silicon optical nanocrystal memory R. J. Walters,a)

    E-Print Network [OSTI]

    Atwater, Harry

    Silicon optical nanocrystal memory R. J. Walters,a) P. G. Kik, J. D. Casperson, and H. A. Atwater (Received 19 January 2004; accepted 22 July 2004) We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low

  3. Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films

    E-Print Network [OSTI]

    Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films K. Pangal,a) J. C August 1998; accepted for publication 21 October 1998 We report that a room temperature hydrogen plasma thermal crystallization of amorphous silicon time by a factor of five. Exposure to hydrogen plasma reduces

  4. Amorphous Silicon as Semiconductor Material for High Resolution LAPS

    E-Print Network [OSTI]

    Moritz, Werner

    ) is limited by the properties of the semiconductor material used. We investigated metalAmorphous Silicon as Semiconductor Material for High Resolution LAPS Werner Moritz1 , Tatsuo-insulator- semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass

  5. Virus-Enabled Silicon Anode for Lithium-Ion Batteries

    E-Print Network [OSTI]

    Ghodssi, Reza

    silicon particles and rapid capacity fading.4 Recently, silicon nanowires and nanotubes have been used particle) for the synthesis of nickel and cobalt nanowires. These struc- tures self-assemble vertically depending upon virus concentration.14 Incorporation of these sur- faces into simple nickel zinc microbatter

  6. Method for improving the stability of amorphous silicon

    DOE Patents [OSTI]

    Branz, Howard M.

    2004-03-30

    A method of producing a metastable degradation resistant amorphous hydrogenated silicon film is provided, which comprises the steps of growing a hydrogenated amorphous silicon film, the film having an exposed surface, illuminating the surface using an essentially blue or ultraviolet light to form high densities of a light induced defect near the surface, and etching the surface to remove the defect.

  7. Epitaxial graphene on silicon carbide: Introduction to structured graphene

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Epitaxial graphene on silicon carbide: Introduction to structured graphene Ming Ruan 1 , Yike Hu 1, France Abstract We present an introduction to the rapidly growing field of epitaxial graphene on silicon present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now

  8. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOE Patents [OSTI]

    Petrovic, John J. (Los Alamos, NM)

    1995-01-01

    Compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  9. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOE Patents [OSTI]

    Petrovic, J.J.

    1995-01-17

    Compositions are disclosed consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  10. Investigating the efficiency of Silicon Solar cells at

    E-Print Network [OSTI]

    Attari, Shahzeen Z.

    Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

  11. Thermoelectric performance of silicon nanowires Gang Zhang,1,a

    E-Print Network [OSTI]

    Li, Baowen

    Thermoelectric performance of silicon nanowires Gang Zhang,1,a Qingxin Zhang,1 Cong-Tinh Bui,2 Guo, the thermoelectric performance of silicon nanowires SiNWs is studied. Large cooling temperature is observed which.6 103 W/cm2 is achieved which is about 600 times larger than that of commercial thermoelectric modules

  12. Intermediate Band Properties of Femtosecond-Laser Hyperdoped Silicon

    E-Print Network [OSTI]

    Mazur, Eric

    -dependent electronic transport measurements. The measurement data indicate that these samples form a localized IB solubility. Hy- perdoped silicon is promising for improving efficiencies of solar cells: the material exhibits broad-band light absorption to wavelengths deep below the corresponding bandgap energy of silicon

  13. Arrays of ultrathin silicon solar microcells

    DOE Patents [OSTI]

    Rogers, John A.; Rockett, Angus A.; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2015-08-11

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  14. Arrays of ultrathin silicon solar microcells

    DOE Patents [OSTI]

    Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2014-03-25

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  15. Hybrid stretchable circuits on silicone substrate

    SciTech Connect (OSTI)

    Robinson, A., E-mail: adam.1.robinson@nokia.com; Aziz, A., E-mail: a.aziz1@lancaster.ac.uk [Nanoscience Centre, University of Cambridge, Cambridge CB01FF (United Kingdom); Liu, Q.; Suo, Z. [School of Engineering and Applied Sciences and Kavli Institute for Bionano Science and Technology, Harvard University, Cambridge, Massachusetts 02138 (United States); Lacour, S. P., E-mail: stephanie.lacour@epfl.ch [Centre for Neuroprosthetics and Laboratory for Soft Bioelectronics Interfaces, School of Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015 (Switzerland)

    2014-04-14

    When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

  16. Fuyuan Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban TransportFortistarFuelCellsEtcSilicon Co Ltd Jump to: navigation,

  17. Longwei Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona:Oregon: EnergyLloyd, NewBranchLongwei Silicon Co Ltd Jump to:

  18. RSI Silicon Products LLC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/Water Use/NevadaaTools <REpowerFormRSI Silicon Products

  19. Silicon Carbide Semiconductors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effect Photovoltaics -7541 UnlimitedShift EndShutdown 2013SignalSignalSilicon

  20. 6N Silicon Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan)data bookresult9) Jump to:13:28-07:00EboroN Silicon Inc

  1. NREL Core Program (NCPV), Session: Film Silicon (Presentation)

    SciTech Connect (OSTI)

    Branz, H. M.

    2008-04-01

    This project supports the Solar America Initiative by: R and D that contributes to goal of grid parity by 2015; research to fill the industry R and D pipeline for next-generation low-cost scalable products; development of industry collaborative research; and improvement of NREL tools and capabilities for film silicon research. The project addresses both parts of film silicon roadmap: (1) amorphous-silicon-based thin film PV--amorphous and nanocrystalline materials, present '2nd generation' technology, 4% of world PV sales in 2007; (2) advanced R and D toward film crystal silicon--definition, large-grained or single-crystal silicon < 100 {micro}m thick; 3-8 year horizon; and goal of reaching 15% cells at area costs approaching thin films.

  2. Micromachined cutting blade formed from {211}-oriented silicon

    DOE Patents [OSTI]

    Fleming, James G. (Albuquerque, NM); Fleming, legal representative, Carol (Burbank, CA); Sniegowski, Jeffry J. (Tijeras, NM); Montague, Stephen (Albuquerque, NM)

    2011-08-09

    A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

  3. Micromachined cutting blade formed from {211}-oriented silicon

    DOE Patents [OSTI]

    Fleming, James G.; Sniegowski, Jeffry J.; Montague, Stephen

    2003-09-09

    A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

  4. Back contact to film silicon on metal for photovoltaic cells

    DOE Patents [OSTI]

    Branz, Howard M.; Teplin, Charles; Stradins, Pauls

    2013-06-18

    A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

  5. Silicon Based Anodes for Li-Ion Batteries

    SciTech Connect (OSTI)

    Zhang, Jiguang; Wang, Wei; Xiao, Jie; Xu, Wu; Graff, Gordon L.; Yang, Zhenguo; Choi, Daiwon; Li, Xiaolin; Wang, Deyu; Liu, Jun

    2012-06-15

    Silicon is environmentally benign and ubiquitous. Because of its high specific capacity, it is considered one of the most promising candidates to replace the conventional graphite negative electrode used in today's Li ion batteries. Silicon has a theoretical specific capacity of nearly 4200 mAh/g (Li21Si5), which is 10 times larger than the specific capacity of graphite (LiC6, 372 mAh/g). However, the high capacity of silicon is associated with huge volume changes (more than 300 percent) when alloyed with lithium, which can cause severe cracking and pulverization of the electrode and lead to significant capacity loss. Significant scientific research has been conducted to circumvent the deterioration of silicon based anode materials during cycling. Various strategies, such as reduction of particle size, generation of active/inactive composites, fabrication of silicon based thin films, use of alternative binders, and the synthesis of 1-D silicon nanostructures have been implemented by a number of research groups. Fundamental mechanistic research has also been performed to better understand the electrochemical lithiation and delithiation process during cycling in terms of crystal structure, phase transitions, morphological changes, and reaction kinetics. Although efforts to date have not attained a commercially viable Si anode, further development is expected to produce anodes with three to five times the capacity of graphite. In this chapter, an overview of research on silicon based anodes used for lithium-ion battery applications will be presented. The overview covers electrochemical alloying of the silicon with lithium, mechanisms responsible for capacity fade, and methodologies adapted to overcome capacity degradation observed during cycling. The recent development of silicon nanowires and nanoparticles with significantly improved electrochemical performance will also be discussed relative to the mechanistic understanding. Finally, future directions on the development of silicon based anodes will be considered.

  6. Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon

    E-Print Network [OSTI]

    Thermal activation energy for the passivation of the n-type crystalline silicon surface of crystalline silicon wafers is known to occur following post-deposition thermal annealing of intrinsic a this, an activation energy of 0.7 0.1 eV was calculated, suggesting that surface passivation

  7. Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G

    2015-02-10

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

  8. Thermo-mechanical characterization of silicone foams

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rangaswamy, Partha; Smith, Nickolaus A.; Cady, Carl M.; Lewis, Matthew W.

    2015-10-01

    Cellular solids such as elastomeric foams are used in many structural applications to absorb and dissipate energy, due to their light weight (low density) and high energy absorption capability. In this paper we will discuss foams derived from S5370, a silicone foam formulation developed by Dow Corning. In the application presented, the foam is consolidated into a cushion component of constant thickness but variable density. A mechanical material model developed by Lewis (2013), predicts material response, in part, as a function of relative density. To determine the required parameters for this model we have obtained the mechanical response in compressionmore »for ambient, cold and hot temperatures. The variable density cushion provided samples sufficient samples so that the effect of sample initial density on the mechanical response could be studied. The mechanical response data showed extreme sensitivity to relative density. We also observed at strains corresponding to 1 MPa a linear relationship between strain and initial density for all temperatures. Samples taken from parts with a history of thermal cycling demonstrated a stiffening response that was a function of temperature, with the trend of more stiffness as temperature increased above ambient. This observation is in agreement with the entropic effects on the thermo-mechanical behavior of silicone polymers. In this study, we present the experimental methods necessary for the development of a material model, the testing protocol, analysis of test data, and a discussion of load (stress) and gap (strain) as a function of sample initial densities and temperatures« less

  9. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Kaplan, Selig N. (El Cerrito, CA); Perez-Mendez, Victor (Berkeley, CA)

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  10. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  11. Silicone injection restores failing submarine cables

    SciTech Connect (OSTI)

    Tilstra, M.

    1995-12-01

    Faced with the prospect of replacing nearly 10 miles of aging undersea cables, Orcas Power & Light Co (Opalco) elected instead to inject silicone into as many of the cables as possible. Silicone injection has been used extensively on underground residential distribution (URD) and feeder cables, but only two underwater cables had previously been injected: a feeder cable for Florida Power Corp under an intercoastal waterway and a cable for Washington Water Power Co under a lake in western Idaho. The compound restores power cables damaged by water treeing and prevents further water damage. Selection criteria included age, type, and whether the cables had ever been spliced. Older, soldered, hand-wrapped splices were avoided as they block the CableCure fluid from flowing through. This makes the cable uninjectable unless the splices are replaced with the molded type. The first cables chosen for injection were between 15 and 30 years old and clear of soldered splices. They also were free from faults. 4 figs.

  12. Cordierite silicon nitride filters. Final report

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B.; Duiven, R.; Berger, M.; Cleveland, J.; Ferri, J.

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  13. Author's personal copy Current status and outlook for silicon-based optical biosensors

    E-Print Network [OSTI]

    Weiss, Sharon

    Author's personal copy Current status and outlook for silicon-based optical biosensors S.M. Weiss a. The advantages of these silicon-based optical biosensors for high sensitivity detection include a low analyte silicon waveguide biosensors. Sections 3 and 4 highlight more conventional silicon photonics technology

  14. Transition metal interaction and Ni-Fe-Cu-Si phases in silicon T. Buonassisi,b

    E-Print Network [OSTI]

    -grade silicon is not cost effi- cient. Therefore, the PV industry is considering the possibil- ity of using, the majority being of multicrystalline silicon mc-Si .1 Depending on the technology the silicon cost may be up to 25% of the cost of solar cells. Further- more, the available amount of electronic-grade silicon

  15. Real-time measurement of radon activity and mixed radiation fields characterization with silicon pixel detector

    E-Print Network [OSTI]

    Severino, Clizia Tecla; Silari, Marco

    Real-time measurement of radon activity and mixed radiation fields characterization with silicon pixel detector

  16. Performance Testing using Silicon Devices - Analysis of Accuracy: Preprint

    SciTech Connect (OSTI)

    Sengupta, M.; Gotseff, P.; Myers, D.; Stoffel, T.

    2012-06-01

    Accurately determining PV module performance in the field requires accurate measurements of solar irradiance reaching the PV panel (i.e., Plane-of-Array - POA Irradiance) with known measurement uncertainty. Pyranometers are commonly based on thermopile or silicon photodiode detectors. Silicon detectors, including PV reference cells, are an attractive choice for reasons that include faster time response (10 us) than thermopile detectors (1 s to 5 s), lower cost and maintenance. The main drawback of silicon detectors is their limited spectral response. Therefore, to determine broadband POA solar irradiance, a pyranometer calibration factor that converts the narrowband response to broadband is required. Normally this calibration factor is a single number determined under clear-sky conditions with respect to a broadband reference radiometer. The pyranometer is then used for various scenarios including varying airmass, panel orientation and atmospheric conditions. This would not be an issue if all irradiance wavelengths that form the broadband spectrum responded uniformly to atmospheric constituents. Unfortunately, the scattering and absorption signature varies widely with wavelength and the calibration factor for the silicon photodiode pyranometer is not appropriate for other conditions. This paper reviews the issues that will arise from the use of silicon detectors for PV performance measurement in the field based on measurements from a group of pyranometers mounted on a 1-axis solar tracker. Also we will present a comparison of simultaneous spectral and broadband measurements from silicon and thermopile detectors and estimated measurement errors when using silicon devices for both array performance and resource assessment.

  17. Antifuse with a single silicon-rich silicon nitride insulating layer

    DOE Patents [OSTI]

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  18. Control of carbon balance in a silicon smelting furnace

    DOE Patents [OSTI]

    Dosaj, V.D.; Haines, C.M.; May, J.B.; Oleson, J.D.

    1992-12-29

    The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

  19. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, George C. (Oak Ridge, TN)

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  20. Metal-assisted chemical etch porous silicon formation method

    DOE Patents [OSTI]

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  1. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

    1994-07-26

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

  2. Controlling carbon nanotube photoluminescence using silicon microring resonators

    E-Print Network [OSTI]

    Noury, Adrien; Vivien, Laurent; Izard, Nicolas

    2015-01-01

    We report on coupling between semiconducting single-wall carbon nanotubes (s-SWNT) photoluminescence and silicon microring resonators. Polyfluorene extracted s-SWNT deposited on such resonators exhibit sharp emission peaks, due to interaction with the cavity modes of the microring resonators. Ring resonators with radius of 5 {\\mu}m and 10 {\\mu}m were used, reaching quality factors up to 4000 in emission. These are among the highest values reported for carbon nanotubes coupled with an integrated cavity on silicon platform, which open up the possibility to build s-SWNT based efficient light source on silicon.

  3. Silicon nitride protective coatings for silvered glass mirrors

    DOE Patents [OSTI]

    Tracy, C.E.; Benson, D.K.

    1984-07-20

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  4. Method of preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals

    SciTech Connect (OSTI)

    Peng, Yu-Min (Hsinchu, TW); Wang, Jih-Wen (Hsinchu, TW); Liue, Chun-Ying (Tau-Yung, TW); Yeh, Shinn-Horng (Kaohsiung, TW)

    1994-01-01

    A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

  5. Imaging topological edge states in silicon photonics

    E-Print Network [OSTI]

    M. Hafezi; S. Mittal; J. Fan; A. Migdall; J. Taylor

    2015-04-03

    Topological features - global properties not discernible locally - emerge in systems from liquid crystals to magnets to fractional quantum Hall systems. Deeper understanding of the role of topology in physics has led to a new class of matter: topologically - ordered systems. The best known examples are quantum Hall effects, where insensitivity to local properties manifests itself as conductance through edge states that is insensitive to defects and disorder. Current research in engineering topological order primarily focuses on analogies to quantum Hall systems, where the required magnetic field is synthesized in non-magnetic systems. Here, we realize synthetic magnetic fields for photons at room temperature, using linear Silicon photonics. We observe, for the first time, topological edge states of light in a two - dimensional system and show their robustness against intrinsic and introduced disorder. Our experiment demonstrates the feasibility of using photonics to realize topological order in both the non-interacting and many-body regimes.

  6. Diamond coated silicon field emitter array

    SciTech Connect (OSTI)

    S. Albin; W. Fu; A. Varghese; A. C. Lavarias; G. R. Myneni

    1999-07-01

    Diamond coated silicon tip arrays, with and without a self-aligned gate, were fabricated, and current-voltage characteristics of 400 tips were measured. Diamond films were grown uniformly on Si tips using microwave plasma after nucleation with 10 nm diamond suspension and substrate bias. An emission current of 57 ?A was obtained at 5 V from the ungated array tips separated from an anode at 2 ?m. In the case of the gated arrays with 1.5 ?m aperture, an emission current of 3.4 ?A was measured at a gate voltage of 80 V for an anode separation of 200 ?m. The turn-on voltages for these two types of devices were 0.2 and 40 V, respectively. Diamond coated Si tip arrays have potential applications in field emission based low voltage vacuum electronic devices and microsensors.

  7. Thin Silicon MEMS Contact-Stress Sensor

    SciTech Connect (OSTI)

    Kotovsky, J; Tooker, A; Horsley, D

    2010-03-22

    This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to the diaphragm, and maintain uniform thickness. The CS sensors have a highly linear output in the load range tested (0-2.4 MPa) with an average accuracy of {+-} 1.5%.

  8. Junction-side illuminated silicon detector arrays

    DOE Patents [OSTI]

    Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

    2004-03-30

    A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

  9. Silicon Pixel Detectors for Synchrotron Applications

    E-Print Network [OSTI]

    Stewart, Graeme Douglas

    Recent advances in particle accelerators have increased the demands being placed on detectors. Novel detector designs are being implemented in many different areas including, for example, high luminosity experiments at the LHC or at next generation synchrotrons. The purpose of this thesis was to characterise some of these novel detectors. The first of the new detector types is called a 3D detector. This design was first proposed by Parker, Kenney and Segal (1997). In this design, doped electrodes are created that extend through the silicon substrate. When compared to a traditional photodiode with electrodes on the opposing surfaces, the 3D design can combine a reasonable detector thickness with a small electrode spacing resulting in fast charge collection and limited charge sharing. The small electrode spacing leads to the detectors having lower depletion voltages. This, combined with the fast collection time, makes 3D detectors a candidate for radiation hard applications. These applications include the upgra...

  10. Hybrid Lithium Niobate and Silicon Photonic Waveguides

    E-Print Network [OSTI]

    Weigel, Peter O; DeRose, Christopher; Pomerene, Andrew T; Starbuck, Andrew L; Lentine, Anthony L; Stenger, Vincent; Mookherjea, Shayan

    2015-01-01

    We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with adiabatic tapers that preserve the symmetry of the fundamental quasi TE mode and prevent mode rotation. We find the average propagation loss in cross section B to be 4.3 dB/cm with a standard deviation of 2.1 dB/cm, comparable with a 3 um SiO2 clad (in place of LN) Si waveguide whose average propagation loss was 3.1 dB/cm with a standard deviation of 2.1 dB/cm.

  11. Silicon Carbide Emitter Turn-Off Thyristor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Jun; Wang, Gangyao; Li, Jun; Huang, Alex Q.; Melcher, Jerry; Atcitty, Stan

    2008-01-01

    A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26?V at 26.5? A / cm 2 current density at room and elevated temperatures. Tested inmore »an inductive circuit with a 2.5?kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88?mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4?kHz if 100? W / cm 2 conduction and the 100? W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5?kV) and higher frequency (10?kHz) are needed. « less

  12. Understanding and improving hole transport in hydrogenated amorphous silicon photovoltaics

    E-Print Network [OSTI]

    Johlin, Eric (Eric Carl)

    2014-01-01

    While hydrogenated amorphous silicon (a-Si:H) solar cells have been studied extensively for the previous four decades, the low performance of the devices is still not well understood. The poor efficiency (below 10%, even ...

  13. Little Boxes: High Tech and the Silicon Valley

    E-Print Network [OSTI]

    Crawford, Margaret

    2013-01-01

    Immigrant Workers and the High-Tech Global Economy (Newin a clerical position at high-tech firms like Varian. TheCrawford Little Boxes High-Tech and the Silicon Valley The

  14. The specific heat of pure and hydrogenated amorphous silicon

    E-Print Network [OSTI]

    Queen, Daniel Robert

    2011-01-01

    5 Specific heat of electron beam evaporated amorphous 5.1silicon 6 Specific heat of hydrogenated CVD technique 6.1The high temperature specific heat of HWCVD a-Si:H grown at

  15. Process and apparatus for casting multiple silicon wafer articles

    DOE Patents [OSTI]

    Nanis, Leonard (Palo Alto, CA)

    1992-05-05

    Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

  16. Safety of light water reactor fuel with silicon carbide cladding

    E-Print Network [OSTI]

    Lee, Youho

    2013-01-01

    Structural aspects of the performance of light water reactor (LWR) fuel rod with triplex silicon carbide (SiC) cladding - an emerging option to replace the zirconium alloy cladding - are assessed. Its behavior under accident ...

  17. Micro-cleaved ridge lasers for optoelectronic integration on silicon

    E-Print Network [OSTI]

    Rumpler, Joseph John, 1976-

    2008-01-01

    This thesis addresses one of the last hurdles to optoelectronic integration on silicon, namely the incorporation of room-temperature, electrically-pumped edge-emitting laser diodes. To this end, thin (-6 pm) InP-based ...

  18. Studies of advanced integrated nano-photonic devices in silicon

    E-Print Network [OSTI]

    Dahlem, Marcus

    2011-01-01

    Electronic-photonic integrated circuits (EPICs) are a promising technology for overcoming bandwidth and power-consumption bottlenecks of traditional integrated circuits. Silicon is a good candidate for building such devices, ...

  19. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  20. Coated Silicon Nanowires as Anodes in Lithium Ion Batteries

    E-Print Network [OSTI]

    Watts, David James

    2014-01-01

    silicon nanowires for lithium ion battery anode with longfor high-performance lithium-ion battery anodes. Appl. Phys.as the anode for a lithium-ion battery with high coulombic

  1. Synthesis and study of novel silicon-based unsaturated polymers

    SciTech Connect (OSTI)

    Lin, J.

    1995-06-19

    Novel unsaturated polymers have been synthesized and studied as precursors to silicon carbide and third order nonlinear optical materials. X ray structures were obtained. Kinetic and mechanistic studies of the unique thermal isomerization of dimethylenedisilacyclobutane to a carbene were conducted.

  2. High temperature investigations of crystalline silicon solar cell materials

    E-Print Network [OSTI]

    Hudelson, George David Stephen, III

    2009-01-01

    Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

  3. Solution-processed amorphous silicon surface passivation layers

    SciTech Connect (OSTI)

    Mews, Mathias Sontheimer, Tobias; Korte, Lars; Rech, Bernd; Mader, Christoph; Traut, Stephan; Wunnicke, Odo

    2014-09-22

    Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120?meV and 200?meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37?ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724?mV was achieved, demonstrating excellent silicon surface passivation.

  4. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  5. Efficient light-trapping nanostructures in thin silicon solar cells

    E-Print Network [OSTI]

    Han, Sang Eon

    We examine light-trapping in thin crystalline silicon periodic nanostructures for solar cell applications. Using group theory, we show that light-trapping can be improved over a broad band when structural mirror symmetry ...

  6. Simulation of iron impurity gettering in crystalline silicon solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2012-01-01

    This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

  7. Anti-reflective nanoporous silicon for efficient hydrogen production

    DOE Patents [OSTI]

    Oh, Jihun; Branz, Howard M

    2014-05-20

    Exemplary embodiments are disclosed of anti-reflective nanoporous silicon for efficient hydrogen production by photoelectrolysis of water. A nanoporous black Si is disclosed as an efficient photocathode for H.sub.2 production from water splitting half-reaction.

  8. Silicon carbidonitride based phosphors and lighting devices using the same

    DOE Patents [OSTI]

    Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

    2013-09-17

    Disclosed herein are novel families of silicon carbidonitride phosphor compositions. In certain embodiments, optimal ranges of carbon content have been identified which provide excellent luminescence and thermal stability characteristics.

  9. Adsorption of Carbon, Silicon, and Germanium Adatoms on Graphene Sheet

    E-Print Network [OSTI]

    Cahyadi, Erica

    2012-01-01

    tunable bandgap in bilayer graphene. Nature 459: 820-23 (Can silicon behave like graphene? A first-principles study.IVA group atoms adsorption on graphene. J. Appl. Phys. 107,

  10. New Composite Silicon-Defect Graphene Anode Architecture

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Composite Silicon-Defect Graphene Anode Architecture for High Capacity, High-Rate Li-ion Batteries Xin Zhao, Cary Hayner, Mayfair Kung, and Harold Kung, Northwestern...

  11. Reactor physics assessment of thick silicon carbide clad PWR fuels

    E-Print Network [OSTI]

    Bloore, David A. (David Allan)

    2013-01-01

    High temperature tolerance, chemical stability and low neutron affinity make silicon carbide (SiC) a potential fuel cladding material that may improve the economics and safety of light water reactors (LWRs). "Thick" SiC ...

  12. Mechanisms for Fatigue of Micron-Scale Silicon Structural Films

    E-Print Network [OSTI]

    Alsem, Daan Hein; Pierron, Olivier N.; Stach, Eric A.; Muhlstein, Christopher L.; Ritchie, Robert O.

    2006-01-01

    cracking in the silicon-oxide layer, e.g. , reaction-layerwithin the surface oxide layer (ref. Cyclic stress-induced,assisted thickened surface oxide layer. This mechanism will

  13. Virus-Enabled Silicon Anode for Lithium-Ion Batteries

    SciTech Connect (OSTI)

    Chen, X L; Gerasopoulos, K; Guo, J C; Brown, A; Wang, Chunsheng; Ghodssi, Reza; Culver, J N

    2010-01-01

    A novel three-dimensional Tobacco mosaic virus assembled silicon anode is reported. This electrode combines genetically modified virus templates for the production of high aspect ratio nanofeatured surfaces with electroless deposition to produce an integrated nickel current collector followed by physical vapor deposition of a silicon layer to form a high capacity silicon anode. This composite silicon anode produced high capacities (3300 mAh/g), excellent charge?discharge cycling stability (0.20% loss per cycle at 1C), and consistent rate capabilities (46.4% at 4C) between 0 and 1.5 V. The biological templated nanocomposite electrode architecture displays a nearly 10-fold increase in capacity over currently available graphite anodes with remarkable cycling stability.

  14. Single-layer graphene on silicon nitride micromembrane resonators

    E-Print Network [OSTI]

    Schmid, Silvan

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization ...

  15. Temperature dependence of ambipolar diffusion in silicon-on-insulator

    E-Print Network [OSTI]

    Zhao, Hui

    2008-03-01

    Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned below...

  16. Silicon-based sleeve devices for chemical reactions

    DOE Patents [OSTI]

    Northrup, M.A.; Mariella, R.P. Jr.; Carrano, A.V.; Balch, J.W.

    1996-12-31

    A silicon-based sleeve type chemical reaction chamber is described that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis. 32 figs.

  17. Silicon-based sleeve devices for chemical reactions

    DOE Patents [OSTI]

    Northrup, M. Allen (Berkeley, CA); Mariella, Jr., Raymond P. (Danville, CA); Carrano, Anthony V. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

    1996-01-01

    A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

  18. Athermal photonic devices and circuits on a silicon platform

    E-Print Network [OSTI]

    Raghunathan, Vivek

    2013-01-01

    In recent years, silicon based optical interconnects has been pursued as an eective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and ...

  19. Geometry control of recrystallized silicon wafers for solar applications

    E-Print Network [OSTI]

    Ruggiero, Christopher W

    2009-01-01

    The cost of manufacturing crystalline silicon wafers for use in solar cells can be reduced by eliminating the waste streams caused by sawing ingots into individual wafers. Professor Emanuel Sachs has developed a new method ...

  20. PROJECT PROFILE: Silicon-Based Tandem Solar Cells

    Broader source: Energy.gov [DOE]

    The project will demonstrate bonded gallium indium phosphide (GaInP) on silicon tandem cells, evaluate the advantages and disadvantages of this method of forming higher-efficiency tandem cells, and compare two- and three-terminal device configurations.

  1. Uncertainty of silicon 1-MeV damage function

    SciTech Connect (OSTI)

    Danjaji, M.B.; Griffin, P.J.

    1997-02-01

    The electronics radiation hardness-testing community uses the ASTM E722-93 Standard Practice to define the energy dependence of the nonionizing neutron damage to silicon semiconductors. This neutron displacement damage response function is defined to be equal to the silicon displacement kerma as calculated from the ORNL Si cross-section evaluation. Experimental work has shown that observed damage ratios at various test facilities agree with the defined response function to within 5%. Here, a covariance matrix for the silicon 1-MeV neutron displacement damage function is developed. This uncertainty data will support the electronic radiation hardness-testing community and will permit silicon displacement damage sensors to be used in least squares spectrum adjustment codes.

  2. Silicon Ink Technology Offers Path to Higher Efficiency Solar...

    Broader source: Energy.gov (indexed) [DOE]

    Silicon Ink Technology Offers Path to Higher Efficiency Solar Cells at Lower Cost Partnering with Sunnyvale-based Innovalight, which was acquired by DuPont in July 2011, EERE...

  3. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  4. Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon 

    E-Print Network [OSTI]

    Martin, Michael S.

    2013-08-13

    and investigate fundamental properties. Noble metal nanoparticles made of gold or silver are grown in cavities in monocrystalline silicon formed by helium ion implantation and high temperature annealing at depth greater than 500 nm from the surface. Metals...

  5. Low-energy tetrahedral polymorphs of carbon, silicon, and germanium

    E-Print Network [OSTI]

    Mujica, Andres; Pickard, Chris J.; Needs, Richard J.

    2015-06-08

    Searches for low-energy tetrahedral polymorphs of carbon and silicon have been performed using density functional theory computations and the ab initio random structure searching approach. Several of the hypothetical phases obtained in our searches...

  6. THERMOELECTRIC PROPERTIES OF ULTRASCALED SILICON NANOWIRES Edwin Bosco Ramayya

    E-Print Network [OSTI]

    Knezevic, Irena

    THERMOELECTRIC PROPERTIES OF ULTRASCALED SILICON NANOWIRES by Edwin Bosco Ramayya A dissertation.1 Thermoelectric Effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Figure Of Merit For Thermoelectric Cooling . . . . . . . . . . . . . . . . . . . . . 4 1.3 Semiconductors in Thermoelectric

  7. Ion implanted silicon solar cells with 18% conversion efficiency

    SciTech Connect (OSTI)

    Spitzer, M.B.; Keavney, C.J.; Milstein, J.B.; Tobin, S.P.

    1984-05-01

    The results of research on the basic understanding of high efficiency in silicon solar cells are presented. It is shown that through the use of low resistivity silicon, texture-etching, ion implantation, surface passivation, and Ta/sub 2/O/sub 5/ antireflection coatings, very high performance can be obtained. Cells with 18% AMI conversion efficiency (100 mW/cm/sup 2/, 28/sup 0/C) are reported, and research to increase the performance to much higher levels is described.

  8. Synthesis of silicon nanotubes by DC arc plasma method

    SciTech Connect (OSTI)

    Tank, C. M.; Bhoraskar, S. V.; Mathe, V. L.

    2012-06-05

    Plasma synthesis is a novel technique of synthesis of nanomaterials as they provide high rate of production and promote metastable reactions. Very thin walled silicon nanotubes were synthesized in a DC direct arc thermal plasma reactor. The effect of parameters of synthesis i.e. arc current and presence of hydrogen on the morphology of Si nanoparticles is reported. Silicon nanotubes were characterized by Transmission Electron Microscopy (TEM), Local Energy Dispersive X-ray analysis (EDAX), and Scanning Tunneling Microscopy (STM).

  9. Target molecules detection by waveguiding in a photonic silicon membrane

    DOE Patents [OSTI]

    Letant, Sonia E. (Livermore, CA); Van Buuren, Anthony (Livermore, CA); Terminello, Louis (Danville, CA); Hart, Bradley R. (Brentwood, CA)

    2006-12-26

    Disclosed herein is a porous silicon filter capable of binding and detecting biological and chemical target molecules in liquid or gas samples. A photonic waveguiding silicon filter with chemical and/or biological anchors covalently attached to the pore walls bind target molecules. The system uses transmission curve engineering principles to allow measurements to be made in situ and in real time to detect the presence of various target molecules and calculate the concentration of bound target.

  10. An investigation of magnesium production in silicon by neutron transmutation 

    E-Print Network [OSTI]

    Davis, Freddie Joe

    1986-01-01

    NEUTRON TRANSMUTATION DOPING CHAPTER II. THEORY APPROACH IRRADIATION AND PRODUCTS NUMERICAL PREDICTIONS 10 REGISTRATION EFFICIENCY CHAPTER III. EXPERIMENT FILM SELECTION 23 PRELIMINARY TESTS OF LR-115 FILM 25 TARGET CONFIGURATION 29 INHERENT... approach. CHAPTER II THEORY APPROACH The general procedure was to irradiate silicon target materially using the NSCR as a neutron source. The desired interaction, that producing magnesium, gives rise to an alpha particle, which may escape the silicon...

  11. 3D, Flash, Induced Current Readout for Silicon Sensors

    SciTech Connect (OSTI)

    Parker, Sherwood I.

    2014-06-07

    A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

  12. Fluorescence of silicon nanoparticles prepared by nanosecond pulsed laser

    SciTech Connect (OSTI)

    Liu, Chunyang, E-mail: chunyangliu@126.com; Sui, Xin; Yang, Fang; Ma, Wei; Li, Jishun; Xue, Yujun [Henan University of Science and Technology, Luoyang, 471003 (China)] [Henan University of Science and Technology, Luoyang, 471003 (China); Fu, Xing [Tianjin University, Tianjin, 300072 (China)] [Tianjin University, Tianjin, 300072 (China)

    2014-03-15

    A pulsed laser fabrication method is used to prepare fluorescent microstructures on silicon substrates in this paper. A 355 nm nanosecond pulsed laser micromachining system was designed, and the performance was verified and optimized. Fluorescence microscopy was used to analyze the photoluminescence of the microstructures which were formed using the pulsed laser processing technique. Photoluminescence spectra of the microstructure reveal a peak emission around 500 nm, from 370 nm laser irradiation. The light intensity also shows an exponential decay with irradiation time, which is similar to attenuation processes seen in porous silicon. The surface morphology and chemical composition of the microstructure in the fabricated region was also analyzed with multifunction scanning electron microscopy. Spherical particles are produced with diameters around 100 nm. The structure is compared with porous silicon. It is likely that these nanoparticles act as luminescence recombination centers on the silicon surface. The small diameter of the particles modifies the band gap of silicon by quantum confinement effects. Electron-hole pairs recombine and the fluorescence emission shifts into the visible range. The chemical elements of the processed region are also changed during the interaction between laser and silicon. Oxidation and carbonization play an important role in the enhancement of fluorescence emission.

  13. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    SciTech Connect (OSTI)

    Chowdhury, Zahidur R. Kherani, Nazir P.

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666?mV, J{sub SC} of 29.5?mA-cm{sup ?2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  14. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using ``safe`` silicon source gas

    DOE Patents [OSTI]

    Mahan, A.H.; Molenbroek, E.C.; Nelson, B.P.

    1998-07-07

    A method is described for producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament. 7 figs.

  15. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2002-01-01

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  16. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOE Patents [OSTI]

    Pugar, Eloise A. (Isla Vista, CA); Morgan, Peter E. D. (Thousand Oaks, CA)

    1990-01-01

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

  17. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOE Patents [OSTI]

    Pugar, E.A.; Morgan, P.E.D.

    1987-09-15

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics

  18. Photoresponsive properties of ultrathin silicon nanowires

    SciTech Connect (OSTI)

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin E-mail: benjamin.thierry@unisa.edu.au; Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas E-mail: benjamin.thierry@unisa.edu.au

    2014-12-08

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20?nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (?1 pW/array), good time response, and high photoresponsivity (R???2.5?×?10{sup 4?}A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40?nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

  19. Fluxless Bonding of Large Silicon Chips to Ceramic Packages Using Electroplated Eutectic Au/Sn/Au Structures

    E-Print Network [OSTI]

    Wang, Pin J.; Kim, Jong S.; Lee, Chin C.

    2009-01-01

    Large Silicon Chips to Ceramic Packages Using Electroplatedlarge silicon chips to ceramic packages has been developedworking chip attached to a ceramic package. (c) g h Fig. 3.

  20. Surface phases on silicon: Preparation, structures, and properties

    SciTech Connect (OSTI)

    Lifshits, V.G.; Saranin, A.A.; Zotov, A.V.

    1995-12-31

    This handbook attempts to review the data available in literature through 1993 on surface phases on silicon substrates. In the introductory section, the authors present the notion of surface phases, the basics of two-dimensional crystallography, and the experimental background used to study these phases. The authors review 64 absorbates on silicon substrate, including silicon itself. For each absorbate, data are reported, when available, for the three main substrate orientations. For each surface orientation, the structures are described, and the overall information is conveniently summarized in a formation-phase diagram. A brief summary of the results obtained from the formation of thicker films is also reported. Finally, when appropriate or available, information is included on surface properties and processes or phenomena related to the formation and occurrence of the surface phases of absorbates on silicon substrate such as self-diffusion, desorption, electromigration, chemical passivation, electronic structure modification, and enhanced reactivity of the silicon surface by the presence of the absorbate. The prototypical low-energy electron diffraction patterns encountered for each known superstructure for a single domain or a multidomain structure can be found in the final supplement.

  1. Porous silicon based anode material formed using metal reduction

    DOE Patents [OSTI]

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  2. Nested potassium hydroxide etching and protective coatings for silicon-based microreactors

    E-Print Network [OSTI]

    de Mas, Nuria

    We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride ...

  3. Femtosecond-laser hyperdoping and texturing of silicon for photovoltaic applications

    E-Print Network [OSTI]

    Mazur, Eric

    #12;! #12;Femtosecond-laser hyperdoping and texturing of silicon for photovoltaic applications Eric Mazur Yu-Ting Lin Femtosecond-laser hyperdoping and texturing of silicon for photovoltaic.2 Organization of the dissertation . . . . . . . . . . . . . . . . . . . . . 2 2 Progress in photovoltaics: black

  4. Biosensors and Bioelectronics 20 (2004) 509517 Silicon chip-based patch-clamp electrodes integrated

    E-Print Network [OSTI]

    Bezanilla, Francisco

    2004-01-01

    Biosensors and Bioelectronics 20 (2004) 509­517 Silicon chip-based patch-clamp electrodes. Keywords: Silicon microchip; BioMEMS; Biosensor; Patch-clamp; Electrophysiology; Biomembranes 1

  5. Naked Deltahedral Silicon Clusters in Solution: Synthesis and Characterization of Si9

    E-Print Network [OSTI]

    Naked Deltahedral Silicon Clusters in Solution: Synthesis and Characterization of Si9 3- and Si5 2 in extracting the first nine- and five-atom naked clusters of silicon in solution and the structural

  6. Thermochemistry and Kinetics of Silicon Hydride Cluster Formation during Thermal Decomposition of Silane

    E-Print Network [OSTI]

    Swihart, Mark T.

    Thermochemistry and Kinetics of Silicon Hydride Cluster Formation during Thermal Decomposition of Silane Mark T. Swihart*, and Steven L. Girshick Department of Mechanical Engineering, Uni an extensive chemical kinetic mechanism for silicon hydride cluster formation during silane pyrolysis

  7. Characterization of temperature profile in furnace and solubility of iron in silicon

    E-Print Network [OSTI]

    Modi, Vrajesh Y

    2011-01-01

    A better understanding of the behavior of impurities, such as iron, in silicon can lead to increases in solar cell efficiency. The purpose of this thesis was to study the behavior of iron in silicon via three sub-tasks: ...

  8. Fabrication and Performance of Silicon-Embedded Permanent-Magnet Microgenerators

    E-Print Network [OSTI]

    Herrault, Florian

    This paper focuses on the design, fabrication, and characterization of silicon-packaged permanent-magnet (PM) microgenerators. The use of silicon packaging favors fine control on shape and dimensions in batch fabrication ...

  9. Orientation-Dependent Interfacial Mobility Governs the Anisotropic Swelling in Lithiated Silicon Nanowires

    E-Print Network [OSTI]

    Zhu, Ting

    (LIBs) for portable electronics, hybrid electric vehicles, and large scale energy storage has stimulatedOrientation-Dependent Interfacial Mobility Governs the Anisotropic Swelling in Lithiated Silicon-induced volume expansion in silicon nanowires, nanopillars, and microslabs is highly anisotropic

  10. Luminescent, quantum dot-based anti-reflective coatings for crystalline silicon photovoltaics

    E-Print Network [OSTI]

    Bruer, Garrett (Garrett A.)

    2010-01-01

    This thesis demonstrates and evaluates the potential application of luminescent quantum dot/polymer solutions on crystalline silicon photovoltaics. After spin coating the QD/polymer onto silicon photodiodes, an increase ...

  11. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    Silicon Solar Cells and Lithium-ion Batteries Using PrintedSilicon Solar Cells and Lithium-ion Batteries Using Printedfor the system and lithium-ion batteries will be used to

  12. Energy harvesting in silicon wavelength converters Kevin K. Tsia, Sasan Fathpour, and Bahram Jalali

    E-Print Network [OSTI]

    Jalali. Bahram

    ://www.ee.ucla.edu/~oecs/ Abstract: Nonlinear loss is the central problem in silicon devices that operate using nonlinear optical report the first demonstration of nonlinear photovoltaic effect in silicon wavelength converters

  13. Silicon Ink for High-Efficiency Solar Cells Captures a Share of the Market (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-08-01

    Fact sheet on 2011 R&D 100 Award winner Silicon Ink. Liquid silicon has arrived, and with it comes a power boost for solar cells and dramatic cost savings for cell manufacturers.

  14. Determination of ionization energies of small silicon clusters with vacuum?ultraviolet (VUV) radiation

    E-Print Network [OSTI]

    Kostko, Oleg

    2010-01-01

    shown in Figure 2  and  tetramer silicon isomers  shown in the  cations.   The  tetramer  is  the  largest  cluster positively charged silicon tetramer is a rhombus with D 2h  

  15. Femtosecond-laser irradiation as a platform for tailoring the optoelectronic properties of silicon

    E-Print Network [OSTI]

    Smith, Matthew John, Ph. D. Massachusetts Institute of Technology

    2012-01-01

    Silicon is the most abundant semiconductor on earth and benefits from decades of technological development driven by the integrated circuit industry. Furthermore, silicon allows for facile n-type and p-type doping, has a ...

  16. A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature

    E-Print Network [OSTI]

    Moon, H.-S.

    Silicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for ...

  17. Silicon bulk micromachined hybrid dimensional artifact.

    SciTech Connect (OSTI)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  18. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect (OSTI)

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  19. Manipulation of surface chemistry and nanostructure in porous silicon-based chemical sensors

    E-Print Network [OSTI]

    Ruminski, Anne Marie

    2009-01-01

    version 2006; Chemical Abstracts Service: Columbus, OH,Abstract Porous silicon nanostructures attract much interest for chemical and

  20. Chemically Etched Silicon Nanowires as Anodes for Lithium-Ion Batteries

    SciTech Connect (OSTI)

    West, Hannah Elise

    2015-08-01

    This study focused on silicon as a high capacity replacement anode for Lithium-ion batteries. The challenge of silicon is that it expands ~270% upon lithium insertion which causes particles of silicon to fracture, causing the capacity to fade rapidly. To account for this expansion chemically etched silicon nanowires from the University of Maine were studied as anodes. They were built into electrochemical half-cells and cycled continuously to measure the capacity and capacity fade.

  1. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOE Patents [OSTI]

    Yunker, W.H.; Christiansen, D.W.

    1983-11-25

    This patent discloses a method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  2. NREL's Black Silicon Increases Solar Cell Efficiency by Reducing Reflected Sunlight (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-11-01

    A fact sheet detailing the R&D 100 Award-winning Black Silicon Nanocatalytic Wet-Chemical Etch technology.

  3. DAMPE silicon tracker on-board data compression algorithm

    E-Print Network [OSTI]

    Dong, Yifan; Qiao, Rui; Peng, Wenxi; Fan, Ruirui; Gong, Ke; Wu, Di; Wang, Huanyu

    2015-01-01

    The Dark Matter Particle Explorer (DAMPE) is an upcoming scientific satellite mission for high energy gamma-ray, electron and cosmic rays detection. The silicon tracker (STK) is a sub detector of the DAMPE payload with an excellent position resolution (readout pitch of 242um), which measures the incident direction of particles, as well as charge. The STK consists 12 layers of Silicon Micro-strip Detector (SMD), equivalent to a total silicon area of 6.5m$^2$. The total readout channels of the STK are 73728, which leads to a huge amount of raw data to be dealt. In this paper, we focus on the on-board data compression algorithm and procedure in the STK, which was initially verified by cosmic-ray measurements.

  4. Enhanced densification under shock compression in porous silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lane, J. Matthew; Thompson, Aidan Patrick; Vogler, Tracy

    2014-10-27

    Under shock compression, most porous materials exhibit lower densities for a given pressure than that of a full-dense sample of the same material. However, some porous materials exhibit an anomalous, or enhanced, densification under shock compression. The mechanism driving this behavior was not completely determined. We present evidence from atomistic simulation that pure silicon belongs to this anomalous class of materials and demonstrate the associated mechanisms responsible for the effect in porous silicon. Atomistic response indicates that local shear strain in the neighborhood of collapsing pores catalyzes a local solid-solid phase transformation even when bulk pressures are below the thermodynamicmore »phase transformation pressure. This metastable, local, and partial, solid-solid phase transformation, which accounts for the enhanced densification in silicon, is driven by the local stress state near the void, not equilibrium thermodynamics. This mechanism may also explain the phenomenon in other covalently bonded materials.« less

  5. Modelling and fabrication of high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    Rohatgi, A.; Smith, A.W.; Salami, J.

    1991-10-01

    This report covers the research conducted on modelling and development of high-efficiency silicon solar cells during the period May 1989 to August 1990. First, considerable effort was devoted toward developing a ray-tracing program for the photovoltaic community to quantify and optimize surface texturing for solar cells. Second, attempts were made to develop a hydrodynamic model for device simulation. Such a model is somewhat slower than drift-diffusion type models like PC-1D, but it can account for more physical phenomena in the device, such as hot carrier effects, temperature gradients, thermal diffusion, and lattice heat flow. In addition, Fermi-Dirac statistics have been incorporated into the model to deal with heavy doping effects more accurately. Third and final component of the research includes development of silicon cell fabrication capabilities and fabrication of high-efficiency silicon cells. 84 refs., 46 figs., 10 tabs.

  6. Deposition of device quality low H content, amorphous silicon films

    DOE Patents [OSTI]

    Mahan, Archie H. (Golden, CO); Carapella, Jeffrey C. (Evergreen, CO); Gallagher, Alan C. (Louisville, CO)

    1995-01-01

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

  7. Deposition of device quality low H content, amorphous silicon films

    DOE Patents [OSTI]

    Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

    1995-03-14

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

  8. Protective coating for alumina-silicon carbide whisker composites

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN)

    1989-01-01

    Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

  9. Cooled silicon nitride stationary turbine vane risk reduction. Final report

    SciTech Connect (OSTI)

    Holowczak, John

    1999-12-31

    The purpose of this program was to reduce the technical risk factors for demonstration of air cooled silicon nitride turbine vanes. The effort involved vane prototype fabrication efforts at two U.S. based gas turbine grade silicon nitride component manufacturers. The efficacy of the cooling system was analyzed via a thermal time/temperature flow test technique previously at UTRC. By having multiple vendors work on parts fabrication, the chance of program success increased for producing these challenging components. The majority of the effort under this contract focused on developing methods for, and producing, the complex thin walled silicon nitride vanes. Components developed under this program will undergo engine environment testing within N00014-96-2-0014.

  10. Electric field geometries dominate quantum transport coupling in silicon nanoring

    SciTech Connect (OSTI)

    Lee, Tsung-Han, E-mail: askaleeg@gmail.com, E-mail: sfhu.hu@gmail.com; Hu, Shu-Fen, E-mail: askaleeg@gmail.com, E-mail: sfhu.hu@gmail.com [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)

    2014-03-28

    Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov–Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47?K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ?B?=?0.178?T was estimated for a ring radius of 86?nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.

  11. A strained silicon cold electron bolometer using Schottky contacts

    SciTech Connect (OSTI)

    Brien, T. L. R. Ade, P. A. R.; Barry, P. S.; Dunscombe, C.; Morozov, D. V.; Sudiwala, R. V.; Leadley, D. R.; Myronov, M.; Parker, E. H. C.; Prest, M. J.; Whall, T. E.; Prunnila, M.; Mauskopf, P. D.

    2014-07-28

    We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n{sup ++} doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160?GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1×10{sup ?16}?W?Hz{sup ?1/2} when the detector is observing a 300?K source through a 4?K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6?mK?Hz{sup ?1/2}. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300?pV?Hz{sup ?1/2} and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise.

  12. Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

    SciTech Connect (OSTI)

    Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C. [and others

    1995-02-01

    The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0{degrees}C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0{degrees}C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length.

  13. Kinetics of Initial Lithiation of Crystalline Silicon Electrodes of Lithium-Ion Batteries

    E-Print Network [OSTI]

    Suo, Zhigang

    Kinetics of Initial Lithiation of Crystalline Silicon Electrodes of Lithium-Ion Batteries Matt phase. KEYWORDS: Lithium-ion batteries, silicon, kinetics, plasticity Lithium-ion batteries already at the electrolyte/lithiated silicon interface, diffusion of lithium through the lithiated phase, and the chemical

  14. PSTA-based Branch and Bound Approach to the Silicon Speedpath Isolation Problem

    E-Print Network [OSTI]

    Najm, Farid N.

    Department University of Toronto Toronto, Ontario, Canada f.najm@utoronto.ca ABSTRACT The lack of good in a very efficient manner. 1. INTRODUCTION "How good are our flows in really predicting silicon?" is a key in modern designs. Silicon debug, whereby silicon information is obtained partic- ularly in the form

  15. High-cycle fatigue and durability of polycrystalline silicon thin lms in ambient air

    E-Print Network [OSTI]

    Ritchie, Robert

    High-cycle fatigue and durability of polycrystalline silicon thin ®lms in ambient air C. First, silicon-based ®lms are still the dominant structural material for micromachines. Second of MEMS components are critical in this maturing ®eld. The silicon-based ®lms commonly used in micromecha

  16. Sensitivity analysis of a dynamic model for submerged arc silicon furnaces.

    E-Print Network [OSTI]

    Foss, Bjarne A.

    Sensitivity analysis of a dynamic model for submerged arc silicon furnaces. B. F. Lund1 , B. A for a dynamic model of submerged arc silicon furnaces. The model we study, called "Simod", was developed updating a nonlinear, dynamic model of a silicon furnace. We have identified a parameter set that has

  17. A new Embedded Atom Method potential for atomic-scale modeling of metal-silicon systems

    E-Print Network [OSTI]

    Zhigilei, Leonid V.

    A new Embedded Atom Method potential for atomic-scale modeling of metal-silicon systems Avinash M efficient interatomic potentials for metal-silicon systems. For metals, the Embedded Atom Method (EAM) [1 for the description of interatomic interactions in metal-silicon systems. The potential is based on reformulation

  18. Electrochemical method for defect delineation in silicon-on-insulator wafers

    DOE Patents [OSTI]

    Guilinger, Terry R. (Albuquerque, NM); Jones, Howland D. T. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Medernach, John W. (Albuquerque, NM); Stevenson, Joel O. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

    1991-01-01

    An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

  19. Influence of deposition parameters on the closed porous structure of magnetron sputtered amorphous silicon coatings

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    silicon coatings J. Caballero-Hernández1 , R. Schierholz 1 , V. Godinho1 , M. Duchamp2 , R. Dunin approach for the production of amorphous porous silicon coatings with closed porosity by He driven and it allows preparing porous silicon coatings with tailored refractive index and over a wide range

  20. Single-crystalline silicon lift-off films for metaloxidesemiconductor devices on arbitrary substrates

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    Single-crystalline silicon lift-off films for metal­oxide­semiconductor devices on arbitrary Received 9 March 2000; accepted for publication 31 May 2000 We present a technique to mount single-crystalline,4 Combining silicon microelectronics on crystalline, high- quality thin silicon films with the properties

  1. Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

  2. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOE Patents [OSTI]

    Tam, S.W.

    1997-02-25

    Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

  3. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOE Patents [OSTI]

    Tam, S.W.

    1998-06-16

    An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

  4. Stable cycling of double-walled silicon nanotube battery anodes through solidelectrolyte

    E-Print Network [OSTI]

    Cui, Yi

    for applications in consumer electronics, transport and large- scale renewable energy storage1­5 . Silicon hasStable cycling of double-walled silicon nanotube battery anodes through solid cycling and an unstable solid­electro- lyte interphase has limited the cycle life of silicon anodes

  5. Thermal rectification at silicon-amorphous polyethylene interface Ming Hu,1,a

    E-Print Network [OSTI]

    Li, Baowen

    Thermal rectification at silicon-amorphous polyethylene interface Ming Hu,1,a Pawel Keblinski,1,b heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene by amorphous polymer polyethylene PE and silicon crystal. We will also show that the mecha- nism governing

  6. SCIPP 05/09 Operation of Short-Strip Silicon Detectors based on p-type

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    SCIPP 05/09 Operation of Short-Strip Silicon Detectors based on p-type Wafers in the ATLAS Upgrade effects in p-type detectors, the expected performance of planned short silicon strip detectors (SSSD), detector thickness (200, 300 µm) for both Float Zone (FZ) and Magnetic Czochralski silicon p-type detectors

  7. Surface Functionalization of Silicon Nanoparticles Produced by Laser-Driven Pyrolysis of Silane followed by

    E-Print Network [OSTI]

    Swihart, Mark T.

    Surface Functionalization of Silicon Nanoparticles Produced by Laser-Driven Pyrolysis of Silane. In Final Form: March 15, 2004 CO2 laser induced pyrolysis of silane was used to produce silicon quantities of silicon nanoparticles by laser-driven pyrolysis of silane followed by an HF- HNO3 etching

  8. Growth of nano-and microcrystalline silicon thin films at low temperature by pulsed electron deposition

    E-Print Network [OSTI]

    Zexian, Cao

    in a multi-junction design [4]. The solar cells based on nanocrystalline silicon (nc-Si) films have now in electronic and optoelectronic devices, particularly in the fabrication of solar cells. Noticeably, thin-film silicon solar cells take a larger market share than the single- and polycrystalline silicon solar cells

  9. Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization energy transfer to bulk silicon with the hybridization of cascaded quantum dots Aydan Yeltik,1 Burak sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy

  10. Origin of complex impact craters on native oxide coated silicon surfaces Juha Samela* and Kai Nordlund

    E-Print Network [OSTI]

    Nordlund, Kai

    silicon oxide layer than on targets without the oxide layer. To explain the formation of these complex. The diameter of the simulated hillock structures in the silicon oxide layer is in agreement shows that the largest lateral momentum is induced in the silicon oxide layer during the impact; thus

  11. Firenze 2001: Silicon Detectors Hartmut F.-W. Sadrozinski , SCIPP, UC Santa Cruz Large-Scale

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    Firenze 2001: Silicon Detectors Hartmut F.-W. Sadrozinski , SCIPP, UC Santa Cruz SCIPPSCIPP Large (SCIPP) Development of Silicon Detectors GLAST : ·Gamma-Ray ·Large Area ·Space Telescope #12;Firenze 2001 by wafer size: 4" & 6" => Ladders #12;Firenze 2001: Silicon Detectors Hartmut F.-W. Sadrozinski , SCIPP, UC

  12. Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    of the photovoltaics market. Currently, the best efficiency of commercial silicon solar modules is around 17Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic://jap.aip.org/authors #12;Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic

  13. Enhanced optical absorption in nanopatterned silicon thin films with a nano-cone-hole

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    .6845, 040.5350. The silicon solar cell is presently dominating the solar cell market, owing to its abundant supply, nearly ideal band gap, and mature fabrication process. Most commer- cial silicon solar cells is consumed, leading to a higher cost for the final product [1]. The thin film silicon solar cell

  14. Quantifying Desorption of Saturated Hydrocarbons from Silicon with Quantum Calculations and Scanning Tunneling Microscopy

    E-Print Network [OSTI]

    Seideman, Tamar

    Quantifying Desorption of Saturated Hydrocarbons from Silicon with Quantum Calculations hydrocarbon on silicon, desorption is observed at bias magnitudes as low as 2.5 V, albeit the desorption with conventional silicon microelectronic tech- nology [17­22]. A detailed understanding of both the electronic

  15. GHZ ELECTRICAL PROPERTIES OF CARBON NANOTUBES ON SILICON DIOXIDE MICRO BRIDGES

    E-Print Network [OSTI]

    Tang, William C

    1 GHZ ELECTRICAL PROPERTIES OF CARBON NANOTUBES ON SILICON DIOXIDE MICRO BRIDGES SHENG F. YEN1 of an approach to reduce the high-frequency capacitive feedthrough and dielectric leakages of carbon nanotubes grown on silicon dioxide micro bridges suspended over silicon substrates. The microwave reflection

  16. Effect of magnetic field applied during secondary annealing on texture and grain size of silicon steel

    E-Print Network [OSTI]

    Garmestani, Hamid

    Abstract Temper cold rolled silicon steel samples were annealed with and without an applied magnetic field. Keywords: Soft magnet; Magnetic annealing; Texture; Grain growth 1. Introduction Silicon steel is a softEffect of magnetic field applied during secondary annealing on texture and grain size of silicon

  17. Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments

    DOE Patents [OSTI]

    Brun, Milivoj Konstantin (Ballston Lake, NY); Luthra, Krishan Lal (Niskayuna, NY)

    2003-01-01

    While silicon-containing ceramics or ceramic composites are prone to material loss in combustion gas environments, this invention introduces a method to prevent or greatly reduce the thickness loss by injecting directly an effective amount, generally in the part per million level, of silicon or silicon-containing compounds into the combustion gases.

  18. ForPeerReview Hybrid structures of porous silicon and conjugated polymers

    E-Print Network [OSTI]

    Asscher, Micha

    called "third generation solar cells [11]). A porous matrix, particularly a porous silicon (PS) matrixForPeerReview Hybrid structures of porous silicon and conjugated polymers for photovoltaic of Jerusalem, Physics Keywords: Porous silicon, conjugated polymers, photovoltaics Wiley-VCH physica status

  19. LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS

    E-Print Network [OSTI]

    LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS F. Haase losses in back-contact back- junction monocrystalline thin-film silicon solar cells. The cells are made for back-contact back- junction (BC BJ) monocrystalline thin-film silicon solar cells using the PSI process

  20. Efficient organic light-emitting diodes using polycrystalline silicon thin films as semitransparent anode

    E-Print Network [OSTI]

    .1063/1.2032604 Organic light-emitting diodes OLED have attracted much interest due to their potential application in flat with silicon microdisplay OLED.8,9 However, silicon has high absorption in the visible light which greatlyEfficient organic light-emitting diodes using polycrystalline silicon thin films as semitransparent

  1. Precipitation of interstitial iron in multicrystalline silicon AnYao Liu1, a

    E-Print Network [OSTI]

    Precipitation of interstitial iron in multicrystalline silicon AnYao Liu1, a and Daniel Macdonald1, multicrystalline silicon, precipitation, supersaturation, spatial distribution Abstract The internal gettering of iron in silicon via iron precipitation at low processing temperatures is known to improve solar cell

  2. Precipitation of iron in multicrystalline silicon during annealing A. Y. Liu and Daniel Macdonald

    E-Print Network [OSTI]

    Precipitation of iron in multicrystalline silicon during annealing A. Y. Liu and Daniel Macdonald.203.43.22 On: Tue, 18 Mar 2014 02:19:30 #12;Precipitation of iron in multicrystalline silicon during annealing 2014) In this paper, the precipitation kinetics of iron in multicrystalline silicon during moderate

  3. Porous silicon ring resonator for compact, high sensitivity biosensing applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rodriguez, Gilberto A.; Hu, Shuren; Weiss, Sharon M.

    2015-01-01

    A ring resonator is patterned on a porous silicon slab waveguide to produce a compact, high quality factor biosensor with a large internal surface area available for enhanced recognition of biological and chemical molecules. The porous nature of the ring resonator allows molecules to directly interact with the guided mode. Quality factors near 10,000 were measured for porous silicon ring resonators with a radius of 25 ?m. A bulk detection sensitivity of 380 nm/RIU was measured upon exposure to salt water solutions. Specific detection of nucleic acid molecules was demonstrated with a surface detection sensitivity of 4 pm/nM.

  4. Deposition of polyaniline film onto porous silicon layer

    SciTech Connect (OSTI)

    Parkhutik, V.P.; Martinez-Duart, J.M. [Univ. of Madrid, (Spain); Callegja, R.D.; Matveeva, E.M. [Polytechnical Univ. of Valencia, (Spain)

    1993-12-31

    Presently porous silicon (PS) layers are being considered a promising visible light emitting sources. Current research concentrates on the understanding of the nature of the light emission and the development of practical luminescent devices. The last goal is to find an appropriate solid contact to the rough surface of PS layers to ensure high electric conductivity and transparency. The aim of this work is to study the deposition of polyaniline (PANI) films onto porous silicon layers as an alternative to indium tin oxide (ITO) as the electrode.

  5. Fabrication and testing of oxidized porous silicon field emitter strips 

    E-Print Network [OSTI]

    Madduri, Vasanta Bhanu

    1992-01-01

    28 30 15. Reaction Cell for Anodization 32 16. 17. Cross-section of a Porous Silicon Field Emitting Strip Ctoss-section of the Anode Tester 34 36 LIST OF FIGURES (Continued) Figure 18. Testing Set-up for the Diode Arrays 19. I-V Curves... electrolyte in place of HF. In this process of oxide formation the oxide is formed at the bottom of the porous layer. The top PS layer can be recrystallized by high temperature annealing or laser processing. Light Emitting Porous Silicon Attempts to use...

  6. The analysis and optimization of a spherical silicon solar cell 

    E-Print Network [OSTI]

    McKee, William Randall

    1976-01-01

    THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee /'' Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE... August 1976 Ma]or Subject: Electrical Engineering THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee Approved as to style and content by: (Chai. rman of Committee) (H of D partment) (Member) 2D...

  7. Characteristic study of silicon sensor for ILD ECAL

    E-Print Network [OSTI]

    Shusuke Takada; Hiroto Hirai; Kiyotomo Kawagoe; Yohei Miyazaki; Yuji Sudo; Taikan Suehara; Hiroki Sumida; Tatsuhiko Tomita; Hiraku Ueno; Tamaki Yoshioka

    2015-03-31

    Excellent jet energy measurement is important at the International Linear Collider (ILC) because most of interesting physics processes decay into multi-jet final states. We employ a particle flow method to reconstruct particles, hence International Large Detector (ILD) needs high spatial resolution which can separate each particle in jets. We study pixelized silicon sensors as active material of ILD Silicon electro- magnetic calorimeter (SiECAL). This paper reports studies of temperature and humidity dependence on dark current and response of laser injection.

  8. Characteristic study of silicon sensor for ILD ECAL

    E-Print Network [OSTI]

    Takada, Shusuke; Kawagoe, Kiyotomo; Miyazaki, Yohei; Sudo, Yuji; Suehara, Taikan; Sumida, Hiroki; Tomita, Tatsuhiko; Ueno, Hiraku; Yoshioka, Tamaki

    2015-01-01

    Excellent jet energy measurement is important at the International Linear Collider (ILC) because most of interesting physics processes decay into multi-jet final states. We employ a particle flow method to reconstruct particles, hence International Large Detector (ILD) needs high spatial resolution which can separate each particle in jets. We study pixelized silicon sensors as active material of ILD Silicon electro- magnetic calorimeter (SiECAL). This paper reports studies of temperature and humidity dependence on dark current and response of laser injection.

  9. Effects of dietary silicon on bone characteristics of poultry 

    E-Print Network [OSTI]

    Plyler, James Edward

    1977-01-01

    with day-old cockerels, eight-week-old turkey poults, and spent hens, to determine the effects of feeding dietary silicon in the form of sodium meta-silicate on bone character- istics. Growth effects were also determined for the cockerels and poults.... In experiments one and, rt:wo, 832 day-old Single Comb White Leghorn cockerel were fed corn-soy chick starter diets at two calcium levels, 0. 42% and 1. 00%. 'Each level was supplemented with 0, 25, 50, 100, or 200 p. p. m. silicon, in the form of sodium meta...

  10. A millimeter-wave antireflection coating for cryogenic silicon lenses

    E-Print Network [OSTI]

    J. M. Lau; J. W. Fowler; T. A. Marriage; L. Page; J. Leong; E. Wishnow; R. Henry; E. Wollck; M. Halpern; D. Marsden; G. Marsden

    2007-01-04

    We have developed and tested an antireflection (AR) coating method for silicon lenses at cryogenic temperatures and millimeter wavelengths. Our particular application is a measurement of the cosmic microwave background. The coating consists of machined pieces of Cirlex glued to the silicon. The measured reflection from an AR coated flat piece is less than 1.5% at the design wavelength. The coating has been applied to flats and lenses and has survived multiple thermal cycles from 300 to 4 K. We present the manufacturing method, the material properties, the tests performed, and estimates of the loss that can be achieved in practical lenses.

  11. Transmissive metallic contact for amorphous silicon solar cells

    DOE Patents [OSTI]

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  12. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    SciTech Connect (OSTI)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. This SiC made by our LSI process meets the thermal properties required for use in high temperature heat exchanger. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin. AC and DC electrical measurements were made to follow the thermal conversion of microcrystalline cellulose to carbon. This study identifies five regions of electrical conductivity that can be directly correlated to the chemical decomposition and microstructural evolution during carbonization. In Region I, a decrease in overall AC conductivity occurs due to the initial loss of the polar groups from cellulose molecules. In Region II, the AC conductivity starts to increase with heat treatment temperature due to the formation and growth of conducting carbon clusters. In Region III, a further increase of AC conductivity with increasing heat treatment temperature is obs

  13. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1994-01-01

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  14. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1982-01-01

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

  15. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOE Patents [OSTI]

    Glatzmaier, G.C.

    1994-06-28

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

  16. 4765Federal Register / Vol. 77, No. 20 / Tuesday, January 31, 2012 / Notices 1 See Crystalline Silicon Photovoltaic Cells,

    E-Print Network [OSTI]

    Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China

  17. Method of deposition of silicon carbide layers on substrates

    DOE Patents [OSTI]

    Angelini, P.; DeVore, C.E.; Lackey, W.J.; Blanco, R.E.; Stinton, D.P.

    1982-03-19

    A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.

  18. Microfabricated Silicone Elastomeric Post Arrays for Measuring Traction Forces of

    E-Print Network [OSTI]

    Chen, Christopher S.

    CHAPTER 13 Microfabricated Silicone Elastomeric Post Arrays for Measuring Traction Forces developed a device consisting of an array of flexible, microfabricated posts capable of measuring these forces under an adherent cell. Functionalizing the top of each post with ECM protein allows cells

  19. EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques

    E-Print Network [OSTI]

    Kaiser, Todd J.

    1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser - Bozeman Screen Printed Solar Cells · Starting wafer is about 0.5 mm thick and 10 x 10 cm2. The wafer is p-type and lightly doped with Boron (1016/cm3) 2 Screen Printed Solar Cells · Saw Damage Etch ­ The starting wafer

  20. Lighting the Dark Silicon by Exploiting Heterogeneity on Future Processors

    E-Print Network [OSTI]

    Koppelman, David M.

    ][17], leading to an ever increasing power density on modern processors. On the other hand, the max- imumLighting the Dark Silicon by Exploiting Heterogeneity on Future Processors Ying Zhang Lu Peng Xin processor power consumption should be always enclosed within a reasonable envelope despite the manufacturing

  1. Fully integrated hybrid silicon two dimensional beam scanner

    E-Print Network [OSTI]

    Bowers, John

    . Heck, J. D. Peters, M. L. Davenport, J. T. Bovington, L. A. Coldren, and J. E. Bowers Electrical. Davenport, J. K. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. E. Bowers, "Hybrid silicon Acoleyen, W. Bogaerts, J. Jágerská, N. Le Thomas, R. Houdré, and R. Baets, "Off-chip beam steering

  2. Nuclear breeder reactor fuel element with silicon carbide getter

    DOE Patents [OSTI]

    Christiansen, David W. (Kennewick, WA); Karnesky, Richard A. (Richland, WA)

    1987-01-01

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  3. Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells

    E-Print Network [OSTI]

    Atwater, Harry

    Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Michael D. Kelzenberg, Daniel B-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response work by our group has shown that macroscopic Si wire arrays (>1 cm2 in area) suitable for photovoltaic

  4. Capturing Post-Silicon Variations using a Representative Critical Path

    E-Print Network [OSTI]

    Sapatnekar, Sachin

    1 Capturing Post-Silicon Variations using a Representative Critical Path Qunzeng Liu and Sachin S on measurements on a replica of the nominal critical path, whose variations are intended to reflect those of the entire circuit after manufacturing. For realistic circuits, where the number of critical paths can

  5. Design tools and issues of silicon micromachined (MEMS) devices

    SciTech Connect (OSTI)

    Davies, B.R.; Rodgers, M.S.; Montague, S.

    1998-05-01

    This paper describes the design and design issues associated with silicon surface micromachined device design Some of the tools described are adaptations of macro analysis tools. Design issues in the microdomain differ greatly from design issues encountered in the macrodomain. Microdomain forces caused by electrostatic attraction, surface tension, Van der Walls forces, and others can be more significant than inertia, friction, or gravity. Design and analysis tools developed for macrodomain devices are inadequate in most cases for microdomain devices. Microdomain specific design and analysis tools are being developed, but are still immature and lack adequate functionality. The fundamental design process for surface micromachined devices is significantly different than the design process employed in the design of macro-sized devices. In this paper, MEMS design will be discussed as well as the tools used to develop the designs and the issues relating fabrication processes to design. Design and analysis of MEMS devices is directly coupled to the silicon micromachining processes used to fabricate the devices. These processes introduce significant design limitations and must be well understood before designs can be successfully developed. In addition, some silicon micromachining fabrication processes facilitate the integration of silicon micromachines with microelectronics on-chip. For devices requiring on-chip electronics, the fabrication processes introduce additional design constraints that must be taken into account during design and analysis.

  6. Radiation Emission by Electrons Channeling in Bent Silicon Crystals

    E-Print Network [OSTI]

    Polozkov, R G; Sushko, G B; Korol, Andrey V; Solov'yov, Andrey V

    2014-01-01

    Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.

  7. RESEARCH PAPER Fouling and its mitigation in silicon microchannels used

    E-Print Network [OSTI]

    Kandlikar, Satish

    - persions in water were performed in rectangular, silicon microchannels having hydraulic diameters between diameter (m) Dh hydraulic diameter (m) e elementary electric charge (coulomb) Eel electrostatic interaction in determining zeta potential (unitless) eo dielectric permittivity of vacuum (F/m) er relative dielectric

  8. Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,

    E-Print Network [OSTI]

    Fan, Shanhui

    ABSTRACT: Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices solar cell. Additionally, about 26% of the module cost comes from the fabrication processes of a SiHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

  9. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

    1996-01-01

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

  10. Amorphous silicon waveguides for microphotonics M. J. A. de Dooda)

    E-Print Network [OSTI]

    Polman, Albert

    ­4 MeV energy range. Thermal relaxation of the amorphous network at 500 °C for 1 h leads to an amorphous electrical quality, and relatively low optical absorption.6 Amorphous silicon has already received a lot of interest both from a fundamental point of view and because of its possible use in solar cells

  11. The structure of electronic states in amorphous silicon

    E-Print Network [OSTI]

    Drabold, David

    the structure and dynamics of electron states in amorphous Si. The nature of the states near the gap at zeroThe structure of electronic states in amorphous silicon David A. Drabold,* Uwe Stephan, Jianjun for amorphous Si, which are of particular interest for efficient ab initio calculation of electronic properties

  12. Results about imaging with silicon strips for Angiography and Mammography

    E-Print Network [OSTI]

    Ramello, Luciano

    is not really useful. #12;FIGURE 1. (Left) Photoelectric conversion efficiency vs. energy for silicon of 300 µm to front configuration efficiency vs. energy: calculation (continuous line) and experimental data (stars]) allows to isolate materials characterized by a different energy dependence of the lin- ear attenuation

  13. NREL Success Stories - Quest for Inexpensive Silicon Solar Cells

    ScienceCinema (OSTI)

    Branz, Howard

    2013-05-29

    Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

  14. CURRENT NEWS Sandwich Solar Cells May See Off Silicon

    E-Print Network [OSTI]

    Rogers, John A.

    to manufacture thin films of GaAs that also allowed versatility in the types of devices they could multiple layers of the material on a single wafer, creating a layered, "pancake" stack of GaAs thin films the photovoltaic (PV) cells are based on silicon. However, alternatives such as GaAs and other compound

  15. Development of an oxidized porous silicon vacuum microtriode 

    E-Print Network [OSTI]

    Smith, Don Deewayne

    1994-01-01

    the requirements for a gigatron cathode. In the present work, a porous sihcon-based approach is evaluated. The use of porous silicon reduces the size of a single emitter to the manometer scale, and a true two-dimensional array geometry can be approached. A wide...

  16. Recombination in compensated crystalline silicon for solar cells Daniel Macdonalda)

    E-Print Network [OSTI]

    in an improved short-circuit current, open-circuit voltage, and solar cell efficiency. VC 2011 American InstituteRecombination in compensated crystalline silicon for solar cells Daniel Macdonalda) and Andre. Accordingly, several research groups have dem- onstrated solar cell performance on compensated material

  17. Evaluation and silicon nitride internal combustion engine components

    SciTech Connect (OSTI)

    Voldrich, W. (Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.)

    1992-04-01

    The feasibility of silicon nitride (Si[sub 3]N[sub 4]) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components' gas-pressure sinterable Si[sub 3]N[sub 4] (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si[sub 3]N[sub 4] components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  18. Status of the CDF Run II Silicon Detector

    SciTech Connect (OSTI)

    S. Nahn

    2003-04-10

    A snapshot of the status of the CDF Run II Silicon Detector is presented, with a summary of commissioning issues since the start of Run II, current performance of the detector, and the use of the data in both the trigger and offline reconstruction.

  19. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

    E-Print Network [OSTI]

    Lee, Ka Yee C.

    . Lieber1,2 Solar cells are attractive candidates for clean and renewable power1,2 ; with miniaturizationLETTERS Coaxial silicon nanowires as solar cells and nanoelectronic power sources Bozhi Tian1 in polymer- blend4 and dye-sensitized solar cells5,6 , to demonstrate carrier multiplication7 , and to enable

  20. Chemical Shielding Tensors for a Silicon-Carbon Double Bond

    E-Print Network [OSTI]

    Apeloig, Yitzhak

    Chemical Shielding Tensors for a Silicon-Carbon Double Bond Jarrod J. Buffy, Robert West,*, Michael of NMR chemical shielding tensors (CST) have been important in aiding the understanding of the nature shielding tensors have been reported and interpreted for compounds containing SidSi,1 PdP,2 SndSn,3 Cd

  1. Silicon Nanoridge Array Waveguides for Nonlinear and Sensing Applications

    E-Print Network [OSTI]

    Fainman, Yeshaiahu

    'Faolain, and T. Krauss, "Green light emission in silicon through slow-light enhanced third-harmonic generation effective third-order nonlinear susceptibility, and high sensitivity to perturbations in its environment and photovoltaics," Nature Nanotechnology 9, 19-32 (2014). 10. J. Levy, M. Foster, A. Gaeta, and M. Lipson

  2. LOW-POWER SILICON NEURONS, AXONS, AND SYNAPSES

    E-Print Network [OSTI]

    Lazzaro, John

    LOW-POWER SILICON NEURONS, AXONS, AND SYNAPSES John Lazzaro and John Wawrzynek Computer Science neuron circuit from (Mead, 1989), that uses a high-gain voltage amplifier with a sigmoidal nonlinearity of Cf and C. Vp VoIi C Cf Vc 5 V 5 nA 5 ms Ii Vo Figure 1. Spiking neuron circuit and function

  3. APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

    SciTech Connect (OSTI)

    Wang, T. H.; Ciszek, T. F.; Page, M. R.; Bauer, R. E.; Wang, Q.; Landry, M. D.

    2002-05-01

    Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750-950C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-quality epitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that 104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2- mm grain-sized polycrystalline silicon device.

  4. Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2014-09-09

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  5. Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2015-07-07

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  6. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOE Patents [OSTI]

    Wang, Qi (Littleton, CO); Stradins, Paul (Golden, CO); Teplin, Charles (Boulder, CO); Branz, Howard M. (Boulder, CO)

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  7. Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

    SciTech Connect (OSTI)

    Uçar, A.; Çopuro?lu, M.; Suzer, S.; Baykara, M. Z.; Ar?kan, O.

    2014-10-28

    We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (?0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual manner as a function of increasing contact force. Additionally, some patterns were sketched on the silicon oxide surface using the PTFE tip to investigate changes produced in the hydrophobicity of the surface, where the approximate water contact angle was 45° before the transfer. The nature of the transferred materials was characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS results revealed that PTFE was faithfully transferred onto the silicon oxide surface upon even at the slightest contact and SEM images demonstrated that stable morphological changes could be imparted onto the surface. The minimum apparent contact pressure to realize the PTFE transfer is estimated as 5 kPa, much lower than reported previously. Stability of the patterns imparted towards many chemical washing processes lead us to postulate that the interaction is most likely to be chemical. Contact angle measurements, which were carried out to characterize and monitor the hydrophobicity of the silicon oxide surface, showed that upon PTFE transfer the hydrophobicity of the SiO{sub 2} surface could be significantly enhanced, which might also depend upon the pattern sketched onto the surface. Contact angle values above 100° were obtained.

  8. A micron resolution optical scanner for characterization of silicon detectors

    SciTech Connect (OSTI)

    Shukla, R. A.; Dugad, S. R. Gopal, A. V.; Gupta, S. K.; Prabhu, S. S.; Garde, C. S.

    2014-02-15

    The emergence of high position resolution (?10 ?m) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fast timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 ?m at 1 ? ? level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 ?m) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.

  9. Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride

    E-Print Network [OSTI]

    Lee, Jong Duk

    , respectively. T­B is the time constant associated with trap-to-band tunneling of an electron,10 T­T is the time constant associated with trap-to-trap tunneling of an electron, B­T is the time constant associated bulk electron trapping rates for silicon nitrides are 102 ­105 times larger than deposited oxides

  10. Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    pin Photodiodes 6 Substrate and Superstrate Designs 7 Multijunction Solar Cells 8 1.3 Staebler IV Measurement 46 Quantum Efficiency Measurements in Multijunction Cells 46 Matching Component Cells in Multijunction Designs 47 High efficiency multiple-junction solar cells 48 5.4 Microcrystalline Silicon Solar

  11. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ?1.55?nm, achieve the best carrier-selectivity producing a contact resistivity ?{sub c} of ?3 m? cm{sup 2} and a recombination current density J{sub 0c} of ?40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350?°C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  12. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    SciTech Connect (OSTI)

    Katoh, Yutai; Koyanagi, Takaaki; Kiggans, Jim; Cetiner, Nesrin; McDuffee, Joel

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  13. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

    DOE Patents [OSTI]

    Holland, Stephen Edward (Hercules, CA)

    2000-02-15

    The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

  14. Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-

    E-Print Network [OSTI]

    Lee, Jong Duk

    Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative at elevated temperatures 150 °C , which can be used for extracting the electron trap density distribution tunneling, Eox t is the internal electric field induced by the trapped charges in the silicon nitride layer

  15. The ternary system cerium-palladium-silicon

    SciTech Connect (OSTI)

    Lipatov, Alexey [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Wien (Austria); Materials Science Department of the Moscow State University, Leninskie Gory, GSP-1, 119991 Moscow (Russian Federation); Gribanov, Alexander [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Wien (Austria); Chemistry Department of the Moscow State University, Leninskie Gory, GSP-1, 119991 Moscow (Russian Federation); Grytsiv, Andriy [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Wien (Austria); Rogl, Peter, E-mail: peter.franz.rogl@univie.ac.a [Institute of Physical Chemistry, University of Vienna, Waehringerstrasse 42, A-1090 Wien (Austria); Murashova, Elena; Seropegin, Yurii [Chemistry Department of the Moscow State University, Leninskie Gory, GSP-1, 119991 Moscow (Russian Federation); Giester, Gerald [Institute of Mineralogy and Crystallography, University of Vienna, Althanstrasse 14, A-1090 Wien (Austria); Kalmykov, Konstantin [Chemistry Department of the Moscow State University, Leninskie Gory, GSP-1, 119991 Moscow (Russian Federation)

    2009-09-15

    Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of tau{sub 8}-Ce{sub 3}Pd{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), tau{sub 16}-Ce{sub 2}Pd{sub 14}Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for tau{sub 18}-CePd{sub 1-x}Si{sub x} (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of tau{sub 5}-Ce{sub 3}PdSi{sub 3} (Ba{sub 3}Al{sub 2}Ge{sub 2}-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and tau{sub 13}-Ce{sub 3-x}Pd{sub 20+x}Si{sub 6} (0<=x<=1, Co{sub 20}Al{sub 3}B{sub 6}-type, Fm3-barm; a=1.21527(2) nm). The ternary compound Ce{sub 2}Pd{sub 3}Si{sub 3} (structure-type Ce{sub 2}Rh{sub 1.35}Ge{sub 4.65}, Pmmn; a=0.42040(1), b=0.42247(1), c=1.72444(3) nm) was detected as a high-temperature compound, however, does not participate in the equilibria at 800 deg. C. Phase equilibria in Ce-Pd-Si are characterized by the absence of cerium solubility in palladium silicides. Mutual solubility among cerium silicides and cerium-palladium compounds are significant whereby random substitution of the almost equally sized atom species palladium and silicon is reflected in extended homogeneous regions at constant Ce-content such as for tau{sub 2}-Ce(Pd{sub x}Si{sub 1-x}){sub 2} (AlB{sub 2}-derivative type), tau{sub 6}-Ce(Pd{sub x}Si{sub 1-x}){sub 2} (ThSi{sub 2}-type) and tau{sub 7}-CePd{sub 2-x}Si{sub 2+x}. The crystal structures of compounds tau{sub 4}-Ce{sub a}pprox{sub 8}Pd{sub a}pprox{sub 46}Si{sub a}pprox{sub 46}, tau{sub 12}-Ce{sub a}pprox{sub 29}Pd{sub a}pprox{sub 49}Si{sub a}pprox{sub 22}, tau{sub 15}-Ce{sub a}pprox{sub 22}Pd{sub a}pprox{sub 67}Si{sub a}pprox{sub 11}, tau{sub 17}-Ce{sub a}pprox{sub 5}Pd{sub a}pprox{sub 77}Si{sub a}pprox{sub 18} and tau{sub 18}-CePd{sub 1-x}Si{sub x} (xapprox0.1) are still unknown. - Abstract: Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction, metallography, SEM and EMPA techniques on about 130 alloys. 18 ternary compounds were observed. Display Omitted

  16. Chemical method for producing smooth surfaces on silicon wafers

    DOE Patents [OSTI]

    Yu, Conrad (Antioch, CA)

    2003-01-01

    An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

  17. Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin

    SciTech Connect (OSTI)

    Bogart, Timothy D.; Oka, Daichi; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2013-12-06

    Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g-1 for 100 cycles when cycled at C/10 and over 1200 mA h g-1 when cycled more rapidly at 1C against Li metal.. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

  18. The electron beam hole drilling of silicon nitride thin films

    SciTech Connect (OSTI)

    Howitt, D. G.; Chen, S. J.; Gierhart, B. C.; Smith, R. L.; Collins, S. D.

    2008-01-15

    The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement, involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen.

  19. First-principles Approaches to Simulate Lithiation in Silicon Electrodes

    E-Print Network [OSTI]

    Zhang, Qianfan; Wang, Enge

    2013-01-01

    Silicon is viewed as an excellent electrode material for lithium batteries due to its high lithium storage capacity. Various Si nano-structures, such as Si nanowires, have performed well as lithium battery anodes and have opened up exciting opportunities for the use of Si in energy storage devices. The mechanism of lithium insertion and the interaction between Li and the Si electrode must be understood at the atomic level; this understanding can be achieved by first-principles simulation. Here, first-principles computations of lithiation in silicon electrodes are reviewed. The review focuses on three aspects: the various properties of bulk Li-Si compounds with different Li concentrations, the electronic structure of Si nanowires and Li insertion behavior in Si nanowires, and the dynamic lithiation process at the Li/Si interface. Potential study directions in this research field and difficulties that the field still faces are discussed at the end.

  20. Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers

    SciTech Connect (OSTI)

    Myers, D. R.

    2011-01-01

    Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

  1. Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers: Preprint

    SciTech Connect (OSTI)

    Myers, D. R.

    2011-04-01

    Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

  2. Inverted cone-shaped all-silicon photonic nanoresonators

    E-Print Network [OSTI]

    Schmitt, Sebastian W; Christiansen, Silke H

    2015-01-01

    A novel type of photonic resonator based on a silicon nanostructure with inverted cone geometry is demonstrated. After excitation with visible light, individual inverted nanocones show near-infrared photonic modes with a high quality factor (Q). A thorough mode analysis reveals that this type of nanocavity geometry sustains a multitude of strongly confined whispering gallery modes, which are characterized by efficient and directional, vertical out-coupling of near-infrared light. Investigating the relation between the inverted nanocone geometry and the mode formation leads to simple design rules that permit to control the number and wavelength of the hosted modes. The unique optical features of the suitably designed all-Si inverted nanocone resonators will raise great interest in vibrant research fields such as silicon nanolasing, optoelectronics, sensing or solar light concentration.

  3. Performance of the CDF Online Silicon Vertex Tracker

    SciTech Connect (OSTI)

    R. Carosi et al.

    2002-03-27

    The Online Silicon Vertex Tracker (SVT) is the new trigger processor dedicated to the 2-D reconstruction of charged particle trajectories at the Level 2 of the CDF trigger. The SVT links the digitized pulse heights found within the Silicon Vertex detector to the tracks reconstructed in the Central Outer Tracker by the Level 1 fast track finder. Preliminary tests of the system took place during the October 2000 commissioning run of the Tevatron Collider. During the April-October 2001 data taking it was possible to evaluate the performance of the system. In this paper we review the tracking algorithms implemented in the SVT and we report on the performance achieved during the early phase of run II.

  4. The reliability and stability of multijunction amorphous silicon PV modules

    SciTech Connect (OSTI)

    Carlson, D.E.

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  5. The OPAL silicon-tungsten calorimeter front end electronics

    SciTech Connect (OSTI)

    Anderson, B.E.; Charalambous, A. . Dept. of Physics and Astronomy); Anderson, K. )

    1994-08-01

    A pair of small angle silicon-tungsten (Si-W) calorimeters has been built to measure the luminosity to a precision better than 0.1% in the OPAL experiment at the Large Electron Positron (LEP) collider at CERN near Geneva. Each calorimeter contains 19 layers of tungsten (W) plates and silicon (Si) detectors, corresponding to a total of 22 radiation lengths, sampled by about 1 m[sup 2] of detectors divided into 304 x64 independently read out channels. A complete electronics system has been developed, from the preamplifier up to the VME read out and control interface. It includes a fast trigger based on analogue sums. This paper describes how a large number of channels have been implemented in a dense environment, thanks to the use of ASIC's directly bonded on the detector.

  6. Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

    SciTech Connect (OSTI)

    Springer, J.; Allen, B.; Wriggins, W.; Kuzbyt, R.; Sinclair, R.

    2012-11-06

    Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirement for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test methods have been developed that deliver accurate and repeatable data, which will be described.

  7. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  8. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  9. Shaanxi Tianhong Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for Low EmissionTianhong Silicon Material Co Ltd Jump to:

  10. MeV Au Ion Irradiation in Silicon and Nanocrystalline Zirconia Film Deposited on Silicon Substrate

    SciTech Connect (OSTI)

    Chang, Yongqin; Zhang, Yanwen; Zhu, Zihua; Edmondson, Philip D.; Weber, William J.

    2012-09-01

    Nanocrystalline zirconia (ZrO2) film with thickness of 305 nm deposited on a silicon substrate was irradiated with 2 MeV Au ions to different fluences at different temperatures. The implanted ion profiles were measured by time-of-flight secondary ion mass spectrometry (ToF-SIMS) and simulated using the stopping and range of ions inmatter (SRIM) code, respectively. The experimental results show that a large fraction of the incident Au ions penetrates through the ZrO2 film and are deposited into the Si substrate. At the interface of ZrO2 and Si, a sudden decrease of Au concentration is observed due to the much larger scattering cross section of Au in ZrO2 than in Si. The depth profile of the Au ions is measured in both the ZrO2 films and the Si substrates, and the results show that the Au distribution profiles do not exhibit a dependence on irradiation temperature. The local Au concentration increases proportionally with the irradiation fluence, suggesting that no thermal or irradiation-induced redistribution of the implanted Au ions. However, the Au concentration in the ZrO2 films, as determined by SIMS, is considerably lower than that predicted by the SRIM results, and the penetration depth from the SIMS measurements is much deeper than that from the SRIM predictions. These observations can be explained by an overestimation of the electronic stopping power, used in the SRIM program, for heavy incident ions in light targets. Over-estimation of the heavy-ion electronic stopping power may lead to errors in local dose calculation and underestimation of the projected range of slow heavy ions in targets that contain light elements. A quick estimate based on a reduced target density may be used to compensate the overestimation of the electronic stopping power in the SRIM program to provide better ion profile prediction.

  11. MeV Au Ion Irradiation in Silicon and Nanocrystalline Zirconia Film Deposited on Silicon Substrate

    SciTech Connect (OSTI)

    Chang, Yongqin; Zhang, Yanwen; Zhu, Zihua; Edmondson, Dr. Philip; Weber, William J

    2012-01-01

    Nanocrystalline zirconia (ZrO2) film with thickness of 305 nm deposited on a silicon substrate was irradiated with 2 MeV Au ions to different fluences at different temperatures. The implanted ion profiles were measured by time-of-flight secondary ion mass spectrometry (ToF-SIMS) and simulated using the stopping and range of ions in matter (SRIM) code, respectively. The experimental results show that a large fraction of the incident Au ions penetrates through the ZrO2 film and are deposited into the Si substrate. At the interface of ZrO2 and Si, a sudden decrease of Au concentration is observed due to the much larger scattering cross section of Au in ZrO2 than in Si. The depth profile of the Au ions is measured in both the ZrO2 films and the Si substrates, and the results show that the Au distribution profiles do not exhibit a dependence on irradiation temperature. The local Au concentration increases proportionally with the irradiation fluence, suggesting that no thermal or irradiation-induced redistribution of the implanted Au ions. However, the Au concentration in the ZrO2 films, as determined by SIMS, is considerably lower than that predicted by the SRIM results, and the penetration depth from the SIMS measurements is much deeper than that from the SRIM predictions. These observations can be explained by an overestimation of the electronic stopping power, used in the SRIM program, for heavy incident ions in light targets. Overestimation of the heavy-ion electronic stopping power may lead to errors in local dose calculation and underestimation of the projected range of slow heavy ions in targets that contain light elements. A quick estimate based on a reduced target density may be used to compensate the overestimation of the electronic stopping power in the SRIM program to provide better ion profile prediction.

  12. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  13. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    SciTech Connect (OSTI)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

  14. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more »between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

  15. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; et al

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore »cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

  16. Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides

    E-Print Network [OSTI]

    Sharma, Rajat; Lin, Hung-Hsi; Vallini, Felipe; Fainman, Yeshaiahu

    2015-01-01

    We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively-driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

  17. Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell

    SciTech Connect (OSTI)

    Geisz, J. F.; Olson, J. M.; Friedman, D. J.

    2004-09-01

    A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused silicon junctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.

  18. Test-to-Failure of Crystalline Silicon Modules: Preprint

    SciTech Connect (OSTI)

    Hacke, P.; Terwilliger, K.; Glick, S.; Trudell, D.; Bosco, N.; Johnston, S.; Kurtz, S. R.

    2010-10-01

    Accelerated lifetime testing of five crystalline silicon module designs was carried out according to the Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol. This protocol compares the reliability of various module constructions on a quantitative basis. The modules under test are subdivided into three accelerated lifetime testing paths: 85..deg..C/85% relative humidity with system bias, thermal cycling between ?40..deg..C and 85..deg..C, and a path that alternates between damp heat and thermal cycling. The most severe stressor is damp heat with system bias applied to simulate the voltages that modules experience when connected in an array. Positive 600 V applied to the active layer with respect to the grounded module frame accelerates corrosion of the silver grid fingers and degrades the silicon nitride antireflective coating on the cells. Dark I-V curve fitting indicates increased series resistance and saturation current around the maximum power point; however, an improvement in junction recombination characteristics is obtained. Shunt paths and cell-metallization interface failures are seen developing in the silicon cells as determined by electroluminescence, thermal imaging, and I-V curves in the case of negative 600 V bias applied to the active layer. Ability to withstand electrolytic corrosion, moisture ingress, and ion drift under system voltage bias are differentiated.

  19. Photonic crystal enhanced silicon cell based thermophotovoltaic systems

    SciTech Connect (OSTI)

    Yeng, Yi Xiang [MIT (Massachusetts Inst. of Technology), Cambridge, MA (United States); ; Chan, Walker R. [MIT (Massachusetts Inst. of Technology), Cambridge, MA (United States); Rinnerbauer, Veronika [Johannes Kepler Univ., Linz (Austria); Stelmakh, Veronika [MIT (Massachusetts Inst. of Technology), Cambridge, MA (United States); Senkevich, Jay J. [MIT (Massachusetts Inst. of Technology), Cambridge, MA (United States); Joannopoulos, John D. [MIT (Massachusetts Inst. of Technology), Cambridge, MA (United States); Soljacic, Marin [MIT (Massachusetts Inst. of Technology), Cambridge, MA (United States); ?elanovi?, Ivan [MIT (Massachusetts Inst. of Technology), Cambridge, MA (United States)

    2015-01-01

    We report the design, optimization, and experimental results of large area commercial silicon solar cell based thermophotovoltaic (TPV) energy conversion systems. Using global non-linear optimization tools, we demonstrate theoretically a maximum radiative heat-to-electricity efficiency of 6.4% and a corresponding output electrical power density of 0.39 W cm?² at temperature T = 1660 K when implementing both the optimized two-dimensional (2D) tantalum photonic crystal (PhC) selective emitter, and the optimized 1D tantalum pentoxide – silicon dioxide PhC cold-side selective filter. In addition, we have developed an experimental large area TPV test setup that enables accurate measurement of radiative heat-to-electricity efficiency for any emitter-filter-TPV cell combination of interest. In fact, the experimental results match extremely well with predictions of our numerical models. Our experimental setup achieved a maximum output electrical power density of 0.10W cm?² and radiative heat-to-electricity efficiency of 1.18% at T = 1380 K using commercial wafer size back-contacted silicon solar cells.

  20. Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

    E-Print Network [OSTI]

    T. Peltola

    2014-11-25

    During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. Thus, to upgrade the tracker to required performance level, comprehensive measurements and simulations studies have already been carried out. Essential information of the performance of an irradiated silicon detector is obtained by monitoring its charge collection efficiency (CCE). From the evolution of CCE with fluence, it is possible to directly observe the effect of the radiation induced defects to the ability of the detector to collect charge carriers generated by traversing minimum ionizing particles (mip). In this paper the numerically simulated CCE and CCE loss between the strips of irradiated silicon strip detectors are presented. The simulations based on Synopsys Sentaurus TCAD framework were performed before and after irradiation for fluences up to $1.5\\times10^{15}$ $\\textrm{n}_{\\textrm{eq}}$cm$^{-2}$ for the n-on-p sensors. A two level and non-uniform three level defect models were applied for the proton irradiation simulations and two level model for neutrons. The results are presented together with the measurements of strip detectors irradiated by different particles and fluences and show considerable agreement for both CCE and its position dependency.

  1. Silicon detectors for the n-TOF neutron beams monitoring

    E-Print Network [OSTI]

    Cosentino, L; Barbagallo, M; Colonna, N; Damone, L; Pappalardo, A; Piscopo, M; Finocchiaro, P

    2015-01-01

    During 2014 the second experimental area EAR2 was completed at the n-TOF neutron beam facility at CERN. As the neutrons are produced via spallation, by means of a high-intensity 20 GeV pulsed proton beam impinging on a thick target, the resulting neutron beam covers an enormous energy range, from thermal to several GeV. In this paper we describe two beam diagnostic devices, designed and built at INFN-LNS, both exploiting silicon detectors coupled with neutron converter foils containing 6Li. The first one is based on four silicon pads and allows to monitor the neutron beam flux as a function of the neutron energy. The second one, based on position sensitive silicon detectors, is intended for the reconstruction of the beam profile, again as a function of the neutron energy. Several electronic setups have been explored in order to overcome the issues related to the gamma flash, namely a huge pulse present at the start of each neutron bunch which may blind the detectors for some time. The two devices have been ch...

  2. Silicon Sensors for Trackers at High-Luminosity Environment

    E-Print Network [OSTI]

    Timo Peltola

    2015-03-12

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than the one of LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented.

  3. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet (Marietta, GA); Doshi, Parag (Altanta, GA); Tate, John Keith (Lawrenceville, GA); Mejia, Jose (Atlanta, GA); Chen, Zhizhang (Duluth, GA)

    1998-06-16

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

  4. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

    1998-06-16

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

  5. Radiation Damage Study for PHENIX Silicon Stripixel Sensors

    E-Print Network [OSTI]

    J. Asai; S. Batsouli; K. Boyle; V. Castillo; V. Cianciolo; D. Fields; C. Haegeman; M. Hoeferkamp; Y. Hosoi; R. Ichimiya; Y. Inoue; M. Kawashima; T. Komatsubara; K. Kurita; Z. Li; D. Lynch; M. Nguyen; T. Murakami; R. Nouicer; H. Ohnishi; R. Pak; K. Sakashita; T. -A. Shibata; K. Suga; A. Taketani; J. Tojo

    2007-10-14

    Silicon stripixel sensors which were developed at BNL will be installed as part of the RHIC-PHENIX silicon vertex tracker (VTX). RHIC II operations provide luminosity up to 2x10^32 /cm2/s so the silicon stripixel sensors will be exposed to a significant amount of radiation. The most problematic radiation effect for VTX is the increase of leakage current, which degrades the signal to noise ratio and may saturate the readout electronics. We studied the radiation damage using the same diodes as CERN-RD48. First, the proportionality between the irradiation fluence and the increase of leakage current of CERN-RD48 was reproduced. Then beam experiments with stripixel sensor were done in which leakage current was found to increase in the same way as that of thereference diode. A stripixel sensor was also irradiated at the PHENIX interaction region (IR) during the 2006 run. We found the same relation between the integrated luminosity and determined fluence from increase of leakage current. The expected fluence is 3-6x10^12 Neq/cm2 (1 MeV neutron equivalent) in RHIC II operations for 10 years. Due to this expected exposure, setting the operating temperature in PHENIX to T< 0 deg. C to suppress leakage current is needed to avoid saturation of preamplifiers.

  6. Photonic crystal enhanced silicon cell based thermophotovoltaic systems

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yeng, Yi Xiang; ; Chan, Walker R.; Rinnerbauer, Veronika; Stelmakh, Veronika; Senkevich, Jay J.; Joannopoulos, John D.; Soljacic, Marin; ?elanovi?, Ivan

    2015-01-30

    We report the design, optimization, and experimental results of large area commercial silicon solar cell based thermophotovoltaic (TPV) energy conversion systems. Using global non-linear optimization tools, we demonstrate theoretically a maximum radiative heat-to-electricity efficiency of 6.4% and a corresponding output electrical power density of 0.39 W cm?² at temperature T = 1660 K when implementing both the optimized two-dimensional (2D) tantalum photonic crystal (PhC) selective emitter, and the optimized 1D tantalum pentoxide – silicon dioxide PhC cold-side selective filter. In addition, we have developed an experimental large area TPV test setup that enables accurate measurement of radiative heat-to-electricity efficiency formore »any emitter-filter-TPV cell combination of interest. In fact, the experimental results match extremely well with predictions of our numerical models. Our experimental setup achieved a maximum output electrical power density of 0.10W cm?² and radiative heat-to-electricity efficiency of 1.18% at T = 1380 K using commercial wafer size back-contacted silicon solar cells.« less

  7. Ceramic composites reinforced with modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1990-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  8. Method for removing oxide contamination from silicon carbide powders

    DOE Patents [OSTI]

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

  9. Wet-chemical systems and methods for producing black silicon substrates

    DOE Patents [OSTI]

    Yost, Vernon; Yuan, Hao-Chih; Page, Matthew

    2015-05-19

    A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

  10. Seventh workshop on the role of impurities and defects in silicon device processing

    SciTech Connect (OSTI)

    NONE

    1997-08-01

    This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

  11. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect (OSTI)

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Xu, Hongxia [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian116024 (China)

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  12. STUDIES ON THE ROLE OF THE SUBSTRATE INTERFACE FOR GERMANIUM AND SILICON LITHIUM ION BATTERY ANODES

    E-Print Network [OSTI]

    Florida, University of

    AND SILICON LITHIUM ION BATTERY ANODES........................................................................................................................16 1.1 Lithium Ion Batteries...................................................................................17 1.1.2 Lithium Ion Battery Chemistry

  13. Magnetic properties and loss separation in iron-silicone-MnZn ferrite soft magnetic composites

    SciTech Connect (OSTI)

    Wu, Shen; Sun, Aizhi; Xu, Wenhuan; Zou, Chao; Yang, Jun; Dong, Juan [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing (China)

    2013-12-16

    This paper investigates the magnetic and structural properties of iron-based soft magnetic composites coated with silicone-MnZn ferrite hybrid. The organic silicone resin was added to improve the flexibility of the insulated iron powder and causes better adhesion between particles to increase the mechanical properties. Scanning electron microscopy and distribution maps show that the iron particle surface is covered with a thin layer of silicone-MnZn ferrite. Silicone-MnZn ferrite coated samples have higher permeability when compared with the non-magnetic silicone resin coated compacts. The real part of permeability increases by 34.18% when compared with the silicone resin coated samples at 20 kHz. In this work, a formula for calculating the total loss component by loss separation method is presented and finally the different parts of total losses are calculated. The results show that the eddy current loss coefficient is close to each other for the silicone-MnZn ferrite, silicone resin and MnZn ferrite coated samples (0.0078silicone-MnZn ferrite coated sample (k{sub 2} =1.4058) in comparison with other samples.

  14. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  15. Method for applying a barrier layer to a silicon based substrate

    DOE Patents [OSTI]

    Eaton, Harry E. (Woodstock, CT); Lawton, Thomas H. (Wethersfield, CT)

    2001-01-01

    A method for applying a barrier layer which comprises a barium-strontium aluminosilicate to a silicon containing substrate which inhibits the formation of cracks.

  16. Method for applying a barrier layer to a silicon based substrate

    DOE Patents [OSTI]

    Eaton, Harry E. (Woodstock, CT); Lawton, Thomas H. (Wethersfield, CT)

    2002-01-01

    A method for applying a barrier layer which comprises a barium-strontium aluminosilicate to a silicon containing substrate which inhibits the formation of cracks.

  17. Transfer and characterization of silicon nanomembrane based photonic devices on flexible polyimide substrate

    E-Print Network [OSTI]

    Texas at Austin, University of

    Transfer and characterization of silicon nanomembrane based photonic devices on flexible polyimide nanomembrane based photonic devices on a Kapton polyimide flexible substrate. Compared with electronic devices

  18. Philips Lumileds Is Exploring the Use of Silicon Substrates to Lower the Cost of LEDs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Philips Lumileds is exploring the use of nitride epitaxy on 150mm silicon substrates to produce low-cost, warm-white, high-performance general-illumination LEDs. Most LEDs are made with C-plane sapphire substrates, but silicon—at roughly half a penny per square millimeter—is much cheaper, and it's also easier to obtain. Philips Lumileds is attempting to adapt the use of silicon to the manufacture of LEDs, drawing upon the knowledge base and depreciated equipment of the computer industry, which has been using silicon substrates for decades.

  19. Silicon Photomultiplier Arrays at TJNAF| U.S. DOE Office of Science...

    Office of Science (SC) Website

    Silicon Photomultiplier Arrays at TJNAF Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science Applications of...

  20. Silicon release coating, method of making same, and method of using same

    DOE Patents [OSTI]

    Jonczyk, Ralf (Wilmington, DE)

    2011-11-22

    A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.