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1

Hoback, Wyoming: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:GreerHi Gtel JumpHoard, Wisconsin: Energy Resources Jump to:Hoback,

2

Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers  

SciTech Connect (OSTI)

CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that introduction of ultrathin MnTe layers improves the interface quality. The effect of a magnetic field in the Faraday configuration on the spectral position of the exciton-emission peaks indicates that frustration of magnetic moments in one-monolayer MnTe insertions is weaker than in two-monolayer insertions. The effect of a magnetic field on the exciton localization can be explained in terms of the exciton wave-function shrinkage and obstruction of the photoexcited charge-carrier motion in the quantum well.

Agekyan, V. F., E-mail: vfag@rambler.ru [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Holz, P. O. [Polish Academy of Sciences, Institute of Physics (Poland); Karczewski, G. [Linkoeping University (Sweden); Katz, V. N. [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Moskalenko, E. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Serov, A. Yu.; Filosofov, N. G. [St. Petersburg State University, Fock Institute of Physics (Russian Federation)

2011-10-15T23:59:59.000Z

3

Weak topological insulators in PbTe/SnTe superlattices  

E-Print Network [OSTI]

It is desirable to realize topological phases in artificial structures by engineering electronic band structures. In this paper we investigate (PbTe)[subscript m](SnTe)[subscript 2n?m] superlattices along the [001] direction ...

Yang, Gang

4

CdTe/CdZnTe pixellated radiation detector.  

E-Print Network [OSTI]

??The work in this thesis is focused on the study of CdTe/CdZnTe pixellated detectors. During this research, three main aspects have been covered in the… (more)

Mohd Zain, Rasif

2015-01-01T23:59:59.000Z

5

Te INCLUSIONS IN CdTe GROWN FROM A SLOWLY COOLED Te SOLUTION AND BY THE TRAVELLING SOLVENT METHOD  

E-Print Network [OSTI]

135 Te INCLUSIONS IN CdTe GROWN FROM A SLOWLY COOLED Te SOLUTION AND BY THE TRAVELLING SOLVENT. Abstract. 2014 CdTe crystals have been grown from a slowly cooled Te solution and with the travelling. Introduction. - CdTe crystals for nuclear radia- tion detectors are usually grown from a slowly cooled solution

Paris-Sud XI, Université de

6

VICTORIA UNIVERSITY OF WELLINGTON Te Whare Wananga o te Upoko o te Ika a Maui  

E-Print Network [OSTI]

VICTORIA UNIVERSITY OF WELLINGTON Te Whare Wananga o te Upoko o te Ika a Maui School Descent Will Smart and Mengjie Zhang Technical Report CS-TR-04/11 August 2004 School of Mathematical and Computing Sciences Victoria University PO Box 600, Wellington New Zealand Tel: +64 4 463 5341 Fax: +64 4 463

Fernandez, Thomas

7

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Luminescence Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Abstract: Radiation detection...

8

TE Connectivity Finds Answers in Tomography  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the...

9

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers  

SciTech Connect (OSTI)

A comparative analysis of multiperiod ZnTe/CdTe superlattices with the CdTe quantum dots grown by molecular beam epitaxy on the GaAs substrate with the ZnTe and CdTe buffer layers is carried out. The elastic-stress-induced shifts of eigenfrequencies of the modes of the CdTe- and ZnTe-like vibrations of materials forming similar superlattices but grown on different buffer ZnTe and CdTe layers are compared. The conditions of formation of quantum dots in the ZnTe/CdTe superlattices on the ZnTe and CdTe buffer layers differ radically.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Institute of Physics (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-07-15T23:59:59.000Z

10

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study  

E-Print Network [OSTI]

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

Khare, Sanjay V.

11

HVAC Optimization at Te Papa  

E-Print Network [OSTI]

and humid climate means that the outside air is rarely very dry. (Incidentally, Te Papa’s position on the harbour means that the air temperatures it faces are several degrees warmer in winter and cooler in summer than at the local weather stations... concentration of 1000 ppm, Figure 8 shows the amount of excess outside air, as a ratio of actual to required, as a function of indoor CO2, for two ambient concentrations, 400 and 500 ppm. (Due to Te Papa’s location on the harbour, ambient CO2 levels vary...

Bishop, R.

2005-01-01T23:59:59.000Z

12

X-ray standing wave study of CdTe/MnTe/CdTe(001) heterointerfaces J. C. Boulliard,a)  

E-Print Network [OSTI]

features of the first stages of growth of ultrathin pseudomorphic MnTe 001 strained layers buried in CdTe on CdTe 001 substrates. Experiments with 004 and 113 reflecting planes show evidence of the presenceTe layers grown in CdTe 001 by molecular beam epitaxy. The results will be compared to high resolution

Boyer, Edmond

13

Observation de super-rseaux CdTe-HgTe par microscopie lectronique en transmission  

E-Print Network [OSTI]

-conducteurs II-VI a été beaucoup plus tardive [2]. Dans cette dernière famille, le système CdTe- HgTe présente l'avantage d'un accord de maille quasi parfait entre les deux composés (a = 0,648 nm pour CdTe contre a = 0 JET MOL�CULAIRE. - Les super- réseaux CdTe-HgTe ont été épitaxiés sur un substrat CdTe d

Paris-Sud XI, Université de

14

Si, CdTe and CdZnTe radiation detectors for imaging applications.  

E-Print Network [OSTI]

??The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy… (more)

Schulman, Tom

2006-01-01T23:59:59.000Z

15

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-01-01T23:59:59.000Z

16

Recycling ZnTe, CdTe, and Other Compound Semiconductors by Ambipolar Electrolysis  

E-Print Network [OSTI]

The electrochemical behavior of ZnTe and CdTe compound semiconductors dissolved in molten ZnCl[subscript 2] and equimolar CdCl[subscript 2]–KCl, respectively, was examined. In these melts dissolved Te is present as the ...

Osswald, Sebastian

17

A Search for Neutrinoless Double Beta Decay of Te-130  

E-Print Network [OSTI]

Decay of Te by Adam Douglas Bryant A dissertation submitted2010 by Adam Douglas Bryant Te Abstract A Search forDecay of Te by Adam Douglas Bryant Doctor of Philosophy in

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

18

Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint  

SciTech Connect (OSTI)

Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.

Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M.; Duenow, J. N.; Young, M. R.; Rance, W. L.; Li, J. V.; Dippo, P.

2012-06-01T23:59:59.000Z

19

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

SciTech Connect (OSTI)

A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, while those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 heat treatment (HT). Films sputtered in O2 partial pressure have a much wider bandgap (BG) than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-05-01T23:59:59.000Z

20

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency magnetron sputtering and coevaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and coevaporated CdS{sub x}Te{sub 1-x} films of lower S content (x < 0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} heat treatment. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Energy loss rate of a charged particle in HgTe/(HgTe, CdTe) quantum wells  

SciTech Connect (OSTI)

The energy loss rate (ELR) of a charged particle in a HgTe/(HgTe, CdTe) quantum well is investigated. We consider scattering of a charged particle by the bulk insulating states in this type of topological insulator. It is found that the ELR characteristics due to the intraband excitation have a linear energy dependence while those due to interband excitation depend on the energy exponentially. An interesting quantitative result is that for a large range of the incident energy, the mean inelastic scattering rate is around a few terahertz.

Chen, Qinjun; Sin Ang, Yee [School of Physics, University of Wollongong, New South Wales 2522 (Australia)] [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Wang, Xiaolin [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)] [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia); Lewis, R. A.; Zhang, Chao [School of Physics, University of Wollongong, New South Wales 2522 (Australia) [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)

2013-11-04T23:59:59.000Z

22

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer  

SciTech Connect (OSTI)

The results of the analysis of the infrared lattice reflectance spectra of multiperiod ZnTe/CdTe superlattices with CdTe quantum dots are reported. The samples are grown by molecular beam epitaxy on the GaAs substrate with the ZnTe buffer layer. Due to the large number of periods of the superlattices, it is possible to observe CdTe-like vibration modes in the quantum dots, i.e., the dislocation-free stressed islands formed during the growth due to relaxation of elastic stresses between the ZnTe and CdTe layers are markedly different in their lattice parameters. From the frequency shifts of the CdTe- and ZnTe-like vibration modes with respect to the corresponding modes in the unstressed materials, it is possible to estimate the level of elastic stresses.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-03-15T23:59:59.000Z

23

Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates  

SciTech Connect (OSTI)

Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation and the optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses grown on Si (100) substrates by using molecular beam epitaxy and atomic layer epitaxy. AFM images showed that uniform CdTe/ZnTe quantum dots with a CdTe layer thickness of 2.5 ML (monolayer) were formed on Si (100) substrates. The excitonic peaks corresponding to transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe nanostructures shifted to a lower energy with increasing thickness of the CdTe layer. The activation energies of the carriers confined in the CdTe/ZnTe nanostructures grown on Si (100) substrates were obtained from the temperature-dependent PL spectra. The present observations can help improve understanding of the formation and the optical properties in CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates.

Lee, H. S.; Park, H. L.; Lee, I.; Kim, T. W. [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)

2007-11-15T23:59:59.000Z

24

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-04-27T23:59:59.000Z

25

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

1999-04-27T23:59:59.000Z

26

Growth and optical properties of CdTe quantum dots in ZnTe nanowires  

SciTech Connect (OSTI)

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12T23:59:59.000Z

27

IMPROVEMENT OF CdMnTe DETECTOR PERFORMANCE BY MnTe PURIFICATION  

SciTech Connect (OSTI)

Residual impurities in manganese (Mn) are a big obstacle to obtaining high-performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the material's purity. In this work, we purified the MnTe compounds combining the zone-refining method with molten Te, which has a very high solubility for most impurities. We confirmed the improved purity of the material by glow-discharge mass spectrometry (GDMS). We also found that CMT crystals from a multiply-refined MnTe source, grown by the vertical Bridgman method, yielded better performing detectors.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Tappero, R.; Hossain, A.; Cui, Y.; Yang, G.; Gul, R.; and James, R.B.

2011-04-25T23:59:59.000Z

28

Phonon blocking by two dimensional electron gas in polar CdTe/PbTe heterojunctions  

SciTech Connect (OSTI)

Narrow-gap lead telluride crystal is an important thermoelectric and mid-infrared material in which phonon functionality is a critical issue to be explored. In this Letter, efficient phonon blockage by forming a polar CdTe/PbTe heterojunction is explicitly observed by Raman scattering. The unique phonon screening effect can be interpreted by recent discovery of high-density two dimensional electrons at the polar CdTe/PbTe(111) interface which paves a way for design and fabrication of thermoelectric devices.

Zhang, Bingpo; Cai, Chunfeng; Zhu, He; Wu, Feifei; Ye, Zhenyu; Chen, Yongyue; Li, Ruifeng; Kong, Weiguang; Wu, Huizhen, E-mail: hzwu@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

2014-04-21T23:59:59.000Z

29

Facultad de Ciencias Departamento de Fsica Te  

E-Print Network [OSTI]

Facultad de Ciencias Departamento de Fâ??�sica Te â?? orica Jet production in charged current deep Ciencias Fâ??�sicas'' by M â?? onica Luisa V â?? azquez Acosta Director : Juan Terr â?? on Cuadrado 16/12/2002 #12; #12; Facultad de Ciencias Departamento de Fâ??�sica Te â?? orica Producci â?? on de chorros hadr â?? onicos en

30

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

31

CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC  

E-Print Network [OSTI]

123 CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC ZONE.-Briand, 92190 Meudon/Bellevue, France Résumé. 2014 En vue de la croissance de cristaux de CdTe de haute cristaux semi-isolants Cd0, 9Hg0, 1Te. Abstract. 2014 Some aspects of the thermodynamic state of CdTe

Paris-Sud XI, Université de

32

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells and durabilityand durability  

E-Print Network [OSTI]

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells PV coatings based on CdTe. ...for transparent window PV:...for transparent window PV: , p g · The X26 for ultrathin CdTe · X26 PV window coatings (250 500 nm of CdTe) are attractive very low cost and· X26 PV window

Rollins, Andrew M.

33

HgTe-low-field Strained HgTe: a textbook 3D topological insulator  

E-Print Network [OSTI]

HgTe-low-field Strained HgTe: a textbook 3D topological insulator Cl´ement Bouvier, Tristan Meunier martyrs 38054 Grenoble Cedex 9, France (Dated: December 9, 2011) Topological insulators can be seen-conductors and topological- insulators, other contributions make transport data more difficult to unravel. This letter

Paris-Sud XI, Université de

34

CdTe, CdTe/CdS Core/Shell, and CdTe/CdS/ZnS Core/Shell/Shell Quantum Dots Study.  

E-Print Network [OSTI]

?? CdTe, CdTe/CdS core/shell, and CdTe/CdS/ZnS core/shell/shell quantum dots (QDs) are potential candidates for bio-imaging and solar cell applications because of some special physical properties… (more)

Yan, Yueran

2012-01-01T23:59:59.000Z

35

THE DEFECT STRUCTURE OF CdTe (*) F. A. KRGER  

E-Print Network [OSTI]

THE DEFECT STRUCTURE OF CdTe (*) F. A. KR�GER David Packard Professor of Electrical Engineering haute résistivité. Abstract. 2014 Evidence concerning the defect structure of CdTe is reviewed

Paris-Sud XI, Université de

36

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering  

SciTech Connect (OSTI)

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)] [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)] [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)] [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03T23:59:59.000Z

37

The Docket Vol. 33 No. 4  

E-Print Network [OSTI]

who have been coerced into porno- graphy, assaulted in awaywithin the reality_.of porno-' graphy’s social harm,

UCLA Law School

1985-01-01T23:59:59.000Z

38

PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE  

E-Print Network [OSTI]

365 PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE R. ALLEMAND, P. BOUTEILLER, M. LAVAL quality criteria, it is necessary to compare Cd-Te detectors results (or estimated characteristics) with other methods (i. e. 8cintillation cameras) in order to know the effective interest of Cd-Te in nuclear

Boyer, Edmond

39

Transverse Feedback in a 100 TeV Storage Ring  

E-Print Network [OSTI]

Proceedings Transverse Feedback in a 100 TeV Storage Ring G.DE93 001571 TRANSVERSE FEEDBACK IN A 100 TeV STORAGE RING*IS UNLIMITED r-t_9. TRANSVERSE FEEDBACK IN A 100 TeV STORAGE

Lambertson, G.

2011-01-01T23:59:59.000Z

40

Hybrid functional calculations of a Te antisite in bulk CdTe.  

E-Print Network [OSTI]

?? The detection of gamma-rays is an important issue in a cast array ofindustries. CdTe is a semiconductor used for gamma-ray detectors whichcan operate at… (more)

Árdal, Kristinn Björgvin

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells  

E-Print Network [OSTI]

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells A a b s t r a c ta r t i c l e i n f o Available online xxxx Keywords: Solar cells CdCl2 CdTe Thin absorbers Due to its high scalability and low production cost, CdTe solar cells have shown a very strong

Romeo, Alessandro

42

The PeTroleum InsTITuTe Annual report 2009 The PeTroleum InsTITuTe  

E-Print Network [OSTI]

The PeTroleum InsTITuTe Annual report 2009 The PeTroleum InsTITuTe Annual report - 2009 online version #12;The PeTroleum InsTITuTe Annual report 2009 #12;The PeTroleum InsTITuTe Annual report 2009 overvIew Annual Report 2009 THE PETROLEUM INSTITUTE Office of the President 4 OFFICE OF THE PRESIDENT DR

43

Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells  

SciTech Connect (OSTI)

Terahertz photoconductivity in magnetic fields in semimetallic HgTe/CdHgTe quantum wells has been studied. The main contribution to photoconductivity comes from a signal that appears as a result of electron-gas heating. It is shown that, with the cyclotron resonance conditions satisfied, the photoconductivity signal is composed of cyclotron-resonance and bolometric components. However, in this case too, the bolometric contribution predominates.

Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gouider, F. [Institut fuer Angewandte Physik (Germany); Vasilyeva, G. Yu. [St. Petersburg State Polytechnic University (Russian Federation); Nachtwei, G. [Institut fuer Angewandte Physik (Germany)

2012-05-15T23:59:59.000Z

44

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

45

Electronic structure and phase stability of MgTe, ZnTe, CdTe, and their alloys in the B3, B4, and B8 structures  

E-Print Network [OSTI]

Aron Walsh and Su-Huai Wei National Renewable Energy Laboratory, Golden, Colorado 80401, USA ReceivedTe. However, the Mg,Zn Te alloy undergoes a B3 to B4 transition above 88% Mg concentration and a B4 to B8 transition above 95% Mg concentration. For Mg,Cd Te, a B3 to B4 transition is predicted above 80% Mg content

Gong, Xingao

46

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe Nanocomposites  

SciTech Connect (OSTI)

Radiation detection demands new scintillators with high quantum efficiency, high energy resolution and short luminescence lifetimes. Nanocomposites consisting of quantum dots and Ce3+ doped nanophosphors may be able to meet these requirements. Here we report the luminescence of LaF3:Ce/CdTe nanocomposites which were synthesized by a wet chemistry method. In LaF3:Ce/CdTe nanocomposites the CdTe quantum dots are converted into nanowires, while in LaF3/CdTe nanocomposites no such conversion is observed. The CdTe luminescence in LaF3:Ce/CdTe nanocomposites is enhanced about 5 times, while in LaF3/CdTe nanocomposites no enhancement was observed. Energy transfer, light-re-absorption and surface passivation are likely the reasons for the luminescence enhancement.

Yao, Mingzhen; Zhang, Xing; Ma, Lun; Chen, Wei; Joly, Alan G.; Huang, Jinsong; Wang, Qingwu

2010-11-15T23:59:59.000Z

47

Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te alloys  

E-Print Network [OSTI]

481 Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te cristaux de CdTe et de Cd0,96Zn0,04Te, de densité de dislocations variant entre 5 x 104 et 6 x 105 cm-2. La and photoluminescence experiments were performed on several CdTe and Cd0.96Zn0.04Te crystals with dislocation density

Paris-Sud XI, Université de

48

New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France)] [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France) [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

2012-02-15T23:59:59.000Z

49

A Calorimetric Search on Double Beta Decay of 130Te  

E-Print Network [OSTI]

We report on the final results of a series of experiments on double decay of 130Te carried out with an array of twenty cryogenic detectors. The set-up is made with crystals of TeO2 with a total mass of 6.8 kg, the largest operating one for a cryogenic experiment. Four crystals are made with isotopically enriched materials: two in 128Te and two others in 130Te. The remaining ones are made with natural tellurium, which contains 31.7 % and 33.8 % 128Te and 130Te, respectively. The array was run under a heavy shield in the Gran Sasso Underground Laboratory at a depth of about 3500 m.w.e. By recording the pulses of each detector in anticoincidence with the others a lower limit of 2.1E23 years has been obtained at the 90 % C.L. on the lifetime for neutrinoless double beta decay of 130Te. In terms of effective neutrino mass this is the most restrictive limit in direct experiments, after those obtained with Ge diodes. Limits on other lepton violating decays of 130Te and on the neutrinoless double beta decay of 128Te to the ground state of 128Xe are also reported and discussed. An indication is presented for the two neutrino double beta decay of 130Te. Some consequences of the present results in the interpretation of geochemical experiments are discussed.

C. Arnaboldi; C. Brofferio; C. Bucci; S. Capelli; O. Cremonesi; E. Fiorini; A. Giuliani; A. Nucciotti; M. Pavan; M. Pedretti; G. Pessina; S. Pirro; C. Pobes; E. Previtali; M. Sisti; M. Vanzini

2003-02-25T23:59:59.000Z

50

High Performance Zintl Phase TE Materials with Embedded Particles...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

TE Materials with Embedded Particles Presents results from embedding nanoparticles in magnesium silicide alloy matrix reducing thermal conductivity by phonon scattering and...

51

A Search for Neutrinoless Double Beta Decay of Te-130  

E-Print Network [OSTI]

far unobserved, neutrinoless double beta decay is a possibleright for the neutrinoless double beta decay of 130 Te. Thisprocess, with neutrinoless double beta decay being the most

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

52

A Search for Neutrinoless Double Beta Decay of Te-130.  

E-Print Network [OSTI]

??This dissertation describes an experimental search for neutrinoless double beta (0???) decay of 130Te. An observation of 0??? decay would establish that neutrinos are Majorana… (more)

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

53

Diamond Based TE Materials | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeat Pump Models |Conduct, Parent CompanyaUSAMPRelated Path DependenceDiamond Based TE

54

Te Mihi Power Station | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump to:Taos County, New Mexico:Taylor County isTaylors,TazewellTe

55

Strain relaxation of CdTe films growing on lattice-mismatched substrates  

E-Print Network [OSTI]

gap approaches the value of bulk CdTe crystals. This makesbulk crystals with crystalline CdTe ?lms for the purpose ofthe top layer of thick CdTe ?lms grown on Si(001) substrate

Ma, Zhixun; Yu, Kin Man; Walukiewicz, Wladek; Yu, Peter Y.; Mao, Samuel S.

2009-01-01T23:59:59.000Z

56

Mechanical and Electrical Properties of CdTe Tetrapods Studied by Atomic Force Microscopy  

E-Print Network [OSTI]

Electrical Properties of CdTe Tetrapods Studied by Atomicelectrical properties of CdTe tetrapod-shaped nanocrystalsIntroduction CdSe and CdTe nanocrystals possess interesting

2008-01-01T23:59:59.000Z

57

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

58

X-ray luminescence of CdTe quantum dots in LaF{sub 3}:Ce/CdTe nanocomposites  

SciTech Connect (OSTI)

CdTe quantum dots have intense photoluminescence but exhibit almost no x-ray luminescence. However, intense x-ray luminescence from CdTe quantum dots is observed in LaF{sub 3}:Ce/CdTe nanocomposites. This enhancement in the x-ray luminescence of CdTe quantum dots is attributed to the energy transfer from LaF{sub 3}:Ce to CdTe quantum dots in the nanocomposites. The combination of LaF{sub 3}:Ce nanoparticles and CdTe quantum dots makes LaF{sub 3}:Ce/CdTe nanocomposites promising scintillators for radiation detection.

Hossu, Marius; Liu Zhongxin; Yao Mingzhen; Ma Lun; Chen Wei

2012-01-02T23:59:59.000Z

59

CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers: Preprint  

SciTech Connect (OSTI)

A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment (HT) at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 HT. Films sputtered in O2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdSxTe1-x alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl2 HT is performed. Further investigation is required to determine whether the CdCl2 heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-07-01T23:59:59.000Z

60

CdS/CdTe Solar Cells Containing Directly-Deposited CdSxTe1-x Alloy Layers  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdS{sub x}Te{sub 1-x} films of lower S content (x<;0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment (HT) at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} HT. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdS{sub x}Te{sub 1-x} alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl{sub 2} HT is performed. Further investigation is required to determine whether the CdCl{sub 2} heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

(GeTe){sub n}SbInTe{sub 3} (n?3)—Element distribution and thermal behavior  

SciTech Connect (OSTI)

Antimony in germanium antimony tellurides (GeTe){sub n}(Sb{sub 2}Te{sub 3}) can be substituted by indium. Homogeneous bulk samples of GeSbInTe{sub 4} (R3-bar m, Z=3, a=4.21324(5) Å, c=41.0348(10) Å) and Ge{sub 2}SbInTe{sub 5} (P3-bar m1, Z=1, a=4.20204(6) Å, c=17.2076(4) Å) were obtained; their structures were refined with the Rietveld method. Single-crystal X-ray diffraction using synchrotron radiation at the K edges of Sb and Te (exploiting anomalous dispersion) yields precise information on the element distribution in the trigonal layered structure of Ge{sub 3}SbInTe{sub 6} (R3-bar m, Z=3, a=4.19789(4) Å, c=62.1620(11) Å). The structure is characterized by van der Waals gaps between distorted rocksalt-type slabs of alternating cation and anion layers. The cation concentration is commensurately modulated with Sb preferring the positions near the gaps. In contrast to unsubstituted Ge{sub 3}Sb{sub 2}Te{sub 6}, quenching the NaCl-type high-temperature phase (stable above ?510 °C) easily yields a pseudocubic modification that is metastable at ambient conditions. Temperature-dependent powder diffraction reveals a broader stability range of the cubic high-temperature modification of Ge{sub 3}SbInTe{sub 6} compared to the ternary phases. In-containing samples partially decompose at ca. 300 °C but become homogeneous again when the high-temperature phase is formed. - Graphical abstract: Crystal structure of 33R-Ge{sub 3}SbInTe{sub 6} as determined by resonant X-ray diffraction, one example of the (GeTe){sub n}SbInTe{sub 3} series of compounds investigated. - Highlights: • The new compounds 21R-GeSbInTe{sub 4}, 9P-Ge{sub 2}SbInTe{sub 5} and 33R-Ge{sub 3}SbInTe are described. • The element distribution in 33R-Ge{sub 3}SbInTe{sub 6} was determined by resonant scattering. • The cation concentration in the crystal structure is strongly modulated. • The Sb substitution by In has a significant impact on phase transitions. • Results may be relevant for thermoelectrics and thin-film phase-change materials.

Fahrnbauer, Felix; Urban, Philipp; Welzmiller, Simon [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Schröder, Thorsten; Rosenthal, Tobias [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany)

2013-12-15T23:59:59.000Z

62

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy  

SciTech Connect (OSTI)

Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.

Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Nowakowski, P.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-15T23:59:59.000Z

63

Electric transport properties of the pentatelluride materials HfTe{sub 5} and ZrTe{sub 5}  

SciTech Connect (OSTI)

The authors have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe{sub 5} and ZrTe{sub 5}. They have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, T{sub p} where T{sub p} {approx} 80K for HfTe{sub 5} and T{sub p} {approx} 145K for ZrTe{sub 5}. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. These data are similar to behavior observed previously in these materials. They have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe{sub 5} and ZrTe{sub 5}. They have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 {micro}V/K and +65 {micro}V/K for HfTe{sub 5} and ZrTe{sub 5}, respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 {micro}V/K for HfTe{sub 5} and +35 {micro}V/K for ZrTe{sub 5}. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T {approx} 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 m{Omega}-cm and 24 m{Omega}-cm for HfTe{sub 5} and ZrTe{sub 5} respectively, compared to single crystal values of 0.35 m{Omega}-cm (HfTe{sub 5}) and 1.0 m{Omega}-cm (ZrTe{sub 5}). The authors have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. They will discuss these materials in relation to their potential as candidates for thermoelectric applications.

Tritt, T.M.; Wilson, M.L.; Littleton, R.L. [and others

1997-07-01T23:59:59.000Z

64

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films  

DOE Patents [OSTI]

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Gessert, Timothy A. (Conifer, CO)

1999-01-01T23:59:59.000Z

65

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films  

DOE Patents [OSTI]

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Gessert, T.A.

1999-06-01T23:59:59.000Z

66

Real-time observation of nanoscale topological transitions in epitaxial PbTe/CdTe heterostructures  

SciTech Connect (OSTI)

The almost completely immiscible PbTe/CdTe heterostructure has recently become a prototype system for self-organized quantum dot formation based on solid-state phase separation. Here, we study by real-time transmission electron microscopy the topological transformations of two-dimensional PbTe-epilayers into, first, a quasi-one-dimensional percolation network and subsequently into zero-dimensional quantum dots. Finally, the dot size distribution coarsens by Ostwald ripening. The whole transformation sequence occurs during all stages in the fully coherent solid state by bulk diffusion. A model based on the numerical solution of the Cahn-Hilliard equation reproduces all relevant morphological and dynamic aspects of the experiments, demonstrating that this standard continuum approach applies to coherent solids down to nanometer dimensions. As the Cahn-Hilliard equation does not depend on atomistic details, the observed morphological transformations are general features of the model. To confirm the topological nature of the observed shape transitions, we developed a parameter-free geometric model. This, together with the Cahn-Hilliard approach, is in qualitative agreement with the experiments.

Groiss, H., E-mail: heiko.groiss@jku.at, E-mail: istvan.daruka@jku.at; Daruka, I., E-mail: heiko.groiss@jku.at, E-mail: istvan.daruka@jku.at; Springholz, G.; Schäffler, F. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz 4040 (Austria); Koike, K.; Yano, M. [Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585 (Japan); Hesser, G. [Center for Surface- and Nanoanalytics (ZONA), Johannes Kepler University, Linz 4040 (Austria); Zakharov, N.; Werner, P. [Max Planck Institute of Microstructure Physics, Halle 06120 (Germany)

2014-01-01T23:59:59.000Z

67

Process Development for High Voc CdTe Solar Cells  

SciTech Connect (OSTI)

This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

Ferekides, C. S.; Morel, D. L.

2011-05-01T23:59:59.000Z

68

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance  

E-Print Network [OSTI]

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance P.J. Sellin1-destructive material characterisation techniques have been applied to CdTe wafers grown by the Travelling Heater Method Imaging Group PL mapping of whole CdTe wafers PL ( =819 nm) scan for two CdTe wafers, (left: wafer L700

Sellin, Paul

69

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water  

E-Print Network [OSTI]

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water Interface Matthew D present a versatile method for cadmium telluride (CdTe) tetrapod syn- thesis by utilizing multiple Te the tetrapod shape. CdTe tetra- pods are a promising inorganic semicon- ductor for photovoltaic cells due

Lin, Zhiqun

70

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers  

SciTech Connect (OSTI)

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasing is observed from 85?K to 300?K covering a wavelength range of 3.3–4.2??m. The best laser performance is achieved for quantum well thicknesses of 20?nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A}?=?3.5?×?10{sup ?27} cm{sup 6} s{sup ?1} was estimated for the laser structure, which is attributed to the large conduction band offset.

Khiar, A., E-mail: amir.khiar@jku.at; Witzan, M.; Hochreiner, A.; Eibelhuber, M.; Springholz, G. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria); Volobuev, V. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria); National Technical University “Kharkiv Polytechnic Institute,” Frunze str. 21, 61002 Kharkiv (Ukraine)

2014-06-09T23:59:59.000Z

71

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

?? HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This… (more)

Fahey, Stephen

2013-01-01T23:59:59.000Z

72

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

??HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This thesis… (more)

Fahey, Stephen D.

2012-01-01T23:59:59.000Z

73

Native defects in MBE-grown CdTe  

SciTech Connect (OSTI)

Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Al. Lotników32/46, 02-668 Warsaw (Poland)

2013-12-04T23:59:59.000Z

74

A Search for Neutrinoless Double Beta Decay of Te-130  

E-Print Network [OSTI]

Bolometric experiments for neutrinoless double beta 3.2.1A Search for Neutrinoless Double Beta Decay of Te by AdamSpring 2010 A Search for Neutrinoless Double Beta Decay of

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

75

Summary of the TeV33 working group  

SciTech Connect (OSTI)

This summary of the TeV33 working group at Snowmass reports on work in the areas of Tevatron store parameters, the beam-beam interaction, Main Injector intensity (slip stacking), antiproton production, and electron cooling.

Bagley, P.P.; Bieniosek, F.M.; Colestock, P. [and others

1996-10-01T23:59:59.000Z

76

INTERACTION OF DEFECTS IN CdTe-CRYSTALS HEAVILY DOPED WITH CHLORINE  

E-Print Network [OSTI]

ClTe) and (VCd 2 ClTe)] form, but larger clusters as well. Thus, the compensation process in Cl doped CdTe, PAGE In order to clarify the mechanism of compensation in semi-insulating crystals of CdTe doped.1051/rphysap:01977001202023500 #12;236 FIG. 1. - Photoluminescence spectra of In and Cl doped CdTe. ND = 10 17

Paris-Sud XI, Université de

77

REVUE DE PHYSIQUE APPLIQUE PHASE DIAGRAM CALCULATION IN THE Te-Bi-Sb TERNARY SYSTEM  

E-Print Network [OSTI]

by the stoichio- metric compounds Bi2Te3-Sb2Te3 and SnTe-PbTe [16, 17] exhibit complete miscibility in both liquid 1976) Résumé. 2014 On calcule le diagramme de l'équilibre liquide-solide dans le système ternaire Te be achieved either by means of time- and labor-consuming measurements which permit plotting the equilibrium

Boyer, Edmond

78

Electrical characteristics of the CdTe-n-CdHgTe structure fabricated in a single molecular-beam epitaxy process  

SciTech Connect (OSTI)

An extraordinary shape of the capacitance-voltage characteristics of CdTe-CdHgTe structures has been detected; these characteristics include a specific 'hump' in the inversion region, the height of which increased severalfold under illumination. Additional measurements using an optical probe, measurements of current-voltage characteristics, and an analysis of the energy-band diagram of the structure showed the following. CdTe, in contrast to CdHgTe, is a p-type semiconductor with an acceptor concentration of 1 x 10{sup 16} cm{sup -3}; there is a hole inversion layer in CdHgTe at the boundary with CdTe, which causes the 'hump'; and the barrier height for holes at the CdTe-Cd{sub 0.43}Hg{sub 0.57}Te interface was determined as 0.13 eV.

Mashukov, Yu. P., E-mail: dr_mashukov@mail.ru; Mikhailov, N. N.; Vasilyev, V. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2010-09-15T23:59:59.000Z

79

Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics  

SciTech Connect (OSTI)

The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

2014-01-01T23:59:59.000Z

80

Coulomb interaction of acceptors in Cd{sub 1?x}Mn{sub x}Te/CdTe quantum dot  

SciTech Connect (OSTI)

The investigation on the effect of confining potential like isotropic harmonic oscillator type potential on the binding and the Coulomb interaction energy of the double acceptors in the presence of magnetic field in a Cd{sub 1?x}Mn{sub x}Te/CdTe Spherical Quantum Dot has been made for the Mn ion composition x=0.3 and compared with the results obtained from the square well type potential using variational procedure in the effective mass approximation.

Kalpana, P.; Nithiananthi, P., E-mail: kjkumar-gri@rediffmail.com; Jayakumar, K., E-mail: kjkumar-gri@rediffmail.com [Department of Physics, Gandhigram Rural University, Gandhigram-624302, TamilNadu (India); Reuben, A. Merwyn Jasper D. [Department of Physics, School of Engineering, Saveetha University, Thandalam, Chennai- 600104, TamilNadu (India)

2014-04-24T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials  

E-Print Network [OSTI]

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2-like" exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3. It is found that crystal symmetry breaking

82

On the behavior of Bi in a CdTe lattice and the compensation effect in CdTe:Bi  

SciTech Connect (OSTI)

CdTe crystals of two types have been grown by the vertical Bridgman method: (i) crystals doped with Bi to {approx}10{sup 18} cm{sup -3} and (ii) double-doped (Bi + Cl) crystals with a Bi concentration of {approx}10{sup 18} cm{sup -3} and a Cl concentration of {approx}10{sup 17} cm{sup -3}. The temperature dependences of the resistivity, photoconductivity, and low-temperature photoluminescence are investigated for the crystals grown. Analysis has shown that doping with Bi (crystals of the first type) leads to compensation of the material. The resistivity of the CdTe:Bi samples at room temperature, depending on the doping level, is varied in the range of 10{sup 5}-10{sup 9} {Omega} cm. The hole concentration is determined by the acceptor level at E{sub v} + 0.4 eV in lightly doped CdTe:Bi samples and by the deep center at E{sub v} + 0.72 eV in heavily doped CdTe:Bi samples. Double doping leads to inversion of the conductivity type and reduces the resistivity to {approx}1 {Omega} cm. Heavily doped CdTe:Bi crystals and double-doped crystals exhibit the presence of acceptors with an ionization energy of 36 meV, which is atypical of CdTe.

Kolosov, S. A., E-mail: kolosov@sci.lebedev.ru; Krivobok, V. S., E-mail: krivobok@sci.lebedev.ru; Klevkov, Yu. V.; Adiyatullin, A. F. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2013-04-15T23:59:59.000Z

83

Influence of EDTA{sup 2-} on the hydrothermal synthesis of CdTe nanocrystallites  

SciTech Connect (OSTI)

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd{sup 2+}. Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA{sup 2-}. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: Black-Right-Pointing-Pointer EDTA serves as a strong ligand with Cd{sup 2+}. Black-Right-Pointing-Pointer The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. Black-Right-Pointing-Pointer With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Black-Right-Pointing-Pointer Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

Gong Haibo [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China); Hao Xiaopeng, E-mail: xphao@sdu.edu.cn [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); Wu Yongzhong [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); Cao Bingqiang; Xu Hongyan [School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China); Xu Xiangang [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China)

2011-12-15T23:59:59.000Z

84

Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint  

SciTech Connect (OSTI)

We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

2012-07-01T23:59:59.000Z

85

Metallurgy, thermal stability, and failure mode of the commercial Bi-Te-based thermoelectric modules.  

SciTech Connect (OSTI)

Bi-Te-based thermoelectric (TE) alloys are excellent candidates for power generation modules. We are interested in reliable TE modules for long-term use at or below 200 C. It is known that the metallurgical characteristics of TE materials and of interconnect components affect the performance of TE modules. Thus, we have conducted an extensive scientific investigation of several commercial TE modules to determine whether they meet our technical requirements. Our main focus is on the metallurgy and thermal stability of (Bi,Sb){sup 2}(Te,Se){sup 3} TE compounds and of other materials used in TE modules in the temperature range between 25 C and 200 C. Our study confirms the material suite used in the construction of TE modules. The module consists of three major components: AlN cover plates; electrical interconnects; and the TE legs, P-doped (Bi{sub 8}Sb{sub 32})(Te{sub 60}) and N-doped (Bi{sub 37}Sb{sub 3})(Te{sub 56}Se{sub 4}). The interconnect assembly contains Sn (Sb {approx} 1wt%) solder, sandwiched between Cu conductor with Ni diffusion barriers on the outside. Potential failure modes of the TE modules in this temperature range were discovered and analyzed. The results show that the metallurgical characteristics of the alloys used in the P and N legs are stable up to 200 C. However, whole TE modules are thermally unstable at temperatures above 160 C, lower than the nominal melting point of the solder suggested by the manufacture. Two failure modes were observed when they were heated above 160 C: solder melting and flowing out of the interconnect assembly; and solder reacting with the TE leg, causing dimensional swelling of the TE legs. The reaction of the solder with the TE leg occurs as the lack of a nickel diffusion barrier on the side of the TE leg where the displaced solder and/or the preexisting solder beads is directly contact the TE material. This study concludes that the present TE modules are not suitable for long-term use at temperatures above 160 C due to the reactivity between the Sn-solder and the (Bi,Sb){sup 2}(Te,Se){sup 3} TE alloys. In order to deploy a reliable TE power generator for use at or below 200 C, alternate interconnect materials must be used and/or a modified module fabrication technique must be developed.

Yang, Nancy Y. C.; Morales, Alfredo Martin

2009-02-01T23:59:59.000Z

86

Milagro Observations of Potential TeV Emitters  

E-Print Network [OSTI]

This paper reports the results from three targeted searches of Milagro TeV sky maps: two extragalactic point source lists and one pulsar source list. The first extragalactic candidate list consists of 709 candidates selected from the Fermi-LAT 2FGL catalog. The second extragalactic candidate list contains 31 candidates selected from the TeVCat source catalog that have been detected by imaging atmospheric Cherenkov telescopes (IACTs). In both extragalactic candidate lists Mkn 421 was the only source detected by Milagro. This paper presents the Milagro TeV flux for Mkn 421 and flux limits for the brighter Fermi-LAT extragalactic sources and for all TeVCat candidates. The pulsar list extends a previously published Milagro targeted search for Galactic sources. With the 32 new gamma-ray pulsars identified in 2FGL, the number of pulsars that are studied by both Fermi-LAT and Milagro is increased to 52. In this sample, we find that the probability of Milagro detecting a TeV emission coincident with a pulsar increase...

Abdo, A A; Allen, B T; Aune, T; Barber, A S; Berley, D; Braun, J; Chen, C; Christopher, G E; DeYoung, T; Dingus, B L; Ellsworth, R W; Gonzalez, M M; Goodman, J A; Hays, E; Hoffman, C M; Huntemeyer, P H; Imran, A; Kolterman, B E; Linnemann, J T; McEnery, J E; Morgan, T; Mincer, A I; Nemethy, P; Pretz, J; Ryan, J M; Parkinson, P M Saz; Schneider, M; Shoup, A; Sinnis, G; Smith, A J; Vasileiou, V; Walker, G P; Williams, D A; Yodh, G B

2014-01-01T23:59:59.000Z

87

Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy  

SciTech Connect (OSTI)

CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Zhao, Xin-Hao [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

2013-11-04T23:59:59.000Z

88

Isovector EMC effect explains the NuTeV anomaly  

E-Print Network [OSTI]

A neutron or proton excess in nuclei leads to an isovector-vector mean-field which, through its coupling to the quarks in a bound nucleon, implies a shift in the quark distributions with respect to the Bjorken scaling variable. We show that this result leads to an additional correction to the NuTeV measurement of sin^2(Theta_W). The sign of this correction is largely model independent and acts to reduce their result. Explicit calculation within a covariant and confining Nambu--Jona-Lasinio model predicts that this vector field correction accounts for approximately two-thirds of the NuTeV anomaly. We are therefore led to offer a new interpretation of the NuTeV measurement, namely, that it is further evidence for the medium modification of the bound nucleon wavefunction.

I. C. Cloët; W. Bentz; A. W. Thomas

2009-01-22T23:59:59.000Z

89

Isovector EMC Effect and the NuTeV Anomaly  

SciTech Connect (OSTI)

A neutron or proton excess in nuclei leads to an isovector-vector mean field which, through its coupling to the quarks in a bound nucleon, implies a shift in the quark distributions with respect to the Bjorken scaling variable. We show that this result leads to an additional correction to the NuTeV measurement of sin{sup 2}theta{sub W}. The sign of this correction is largely model independent and acts to reduce their result. Explicit calculation in nuclear matter within a covariant and confining Nambu-Jona-Lasinio model predicts that this vector field correction may account for a substantial fraction of the NuTeV anomaly. We are therefore led to offer a new interpretation of the NuTeV measurement, namely, that it provides further evidence for the medium modification of the bound nucleon wave function.

Cloeet, I. C. [Department of Physics, University of Washington, Seattle, Washington 98195-1560 (United States); Bentz, W. [Department of Physics, School of Science, Tokai University, Hiratsuka-shi, Kanagawa 259-1292 (Japan); Thomas, A. W. [Jefferson Lab, 12000 Jefferson Avenue, Newport News, Virginia 23606, USA and College of William and Mary, Williamsburg, Virginia 23187 (United States)

2009-06-26T23:59:59.000Z

90

What causes high resistivity in CdTe  

SciTech Connect (OSTI)

Shallow donors are often introduced into semiconductor materials to enhance n-type conductivity. However, they can sometimes also be used to obtain compensation between donors and acceptors, resulting in high resistivity in semiconductors. For example, CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the shallow donor alone cannot be responsible for the high resistivity in CdTe. This is based on the argument that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. Therefore, a deep native donor is usually assumed to exist in CdTe and pin the Fermi level near midgap. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe and illustrate different donor-specific mechanisms for achieving carrier compensation. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe without requiring additional deep donors. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps. This study highlights how the interaction between impurities and native defects intricately affects the Fermi level pinning in the semiconductor band gap and the associated resistivity of the material.

Biswas, Koushik [ORNL; Du, Mao-Hua [ORNL

2012-01-01T23:59:59.000Z

91

Precision Calibration of the NuTeV Calorimeter  

E-Print Network [OSTI]

NuTeV is a neutrino-nucleon deep-inelastic scattering experiment at Fermilab. The detector consists of an iron-scintillator sampling calorimeter interspersed with drift chambers, followed by a muon toroidal spectrometer. We present determinations of response and resolution functions of the NuTeV calorimeter for electrons, hadrons, and muons over an energy range of 4.8 to 190 GeV. The absolute hadronic energy scale is determined to an accuracy of 0.43%. We compare our measurements to predictions from calorimeter theory and GEANT3 simulations.

The NuTeV Collaboration; D. A. Harris; J. Yu

1999-08-20T23:59:59.000Z

92

High contrast, CdTe portal scanner for radiation therapy  

SciTech Connect (OSTI)

This paper reports on one of the most promising new technologies for improving the qualify of radiation therapy, the use of real-time systems to produce portal images. In the authors' approach, they are constructing a linear array of 256 CdTe photovoltaic detectors attached to a very compact linear scanner, all of which will be mounted in a cassette shaped package to be located under the patient table. The high stopping power of the CdTe allows a high contrast image to be made using only a single Linac pulse per line, resulting in a high contrast image in under 5 seconds.

Entine, G.; Squillante, M.R.; Hahn, R.; Cirignano, L.J.; McGann, W. (Radiation Monitoring Devices, Inc., Watertown, MA (United States)); Biggs, P.J. (Massachusetts General Hospital, Boston, MA (United States))

1992-10-01T23:59:59.000Z

93

Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles  

SciTech Connect (OSTI)

Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

Wu, F; Zaug, J; Young, C; Zhang, J Z

2006-11-29T23:59:59.000Z

94

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

95

Ligand Mediated Surface Reconstruction of Photoluminescent CdTe Quantum Dots.  

E-Print Network [OSTI]

??Enhancement of photoluminescence (PL) is observed for light-shielded dodecylamine-capped colloidal CdTe quantum dots (CdTe/DDA QDs) dispersed in toluene after washing and recapping. The PL quantum… (more)

Onnink, A.J.

2013-01-01T23:59:59.000Z

96

Development of Materials and Structures for p-type Contacts in CdTe Solar Cells.  

E-Print Network [OSTI]

??Solar cells based on CdTe absorbers are attractive due to the optimal direct band gap energy and large absorption coefficient of CdTe, however, their performance… (more)

Ferizovic, Dino

2012-01-01T23:59:59.000Z

97

WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO  

E-Print Network [OSTI]

1 WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO.1016/S0030-4018(96)00516-0 #12;2 Photorefractive semiconductors like CdTe are characterized by a low

98

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for Improved Performance. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance. Abstract: We report on CdSCdTe photovoltaic devices...

99

Change in the current-carrier concentration upon doping PbTe with gallium  

SciTech Connect (OSTI)

Upon doping PbTe with gallium, both high-resistivity samples with intrinsic conductivity and low-resistivity samples with electronic conductivity (n/sub e/ = 10/sup 18/ cm/sup -3/) are produced on the PbTe-GaTe section. A thorough investigation of the dependence of the thermo-emf of Pb/sub 1-x/Ga/sub x/Te on the excess Pb and Te side showed the presence of a wide region with intrinsic conductivity. The experimental data can be explained by the fact that impure gallium in PbTe has negative Hubbard energy and stabilizes the Fermi level almost at the center of the forbidden band. At high gallium concentrations, Ga/sub 2/Te/sub 3/ precipitates at first, and then GaTe precipitates as well. The lead forming in excess transforms Ga/sup 3 +/ to Ga/sup +/, which produces the electronic conductivity in the material.

Bushmarina, G.S.; Gruzinov, B.F.; Drabkin, I.A.; Lev, E.Ya.; Moizhes, B.Ya; Suprun, S.G.

1987-07-01T23:59:59.000Z

100

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY  

E-Print Network [OSTI]

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY Dave Albin (CBD) and close spaced sublimation (CSS) respectively. CdTe growth is followed by either solution

Sites, James R.

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

102

Indication of Te segregation in laser-irradiated ZnTe observed by in situ coherent-phonon spectroscopy  

SciTech Connect (OSTI)

We irradiate a ZnTe single crystal with 10-fs laser pulses at a repetition rate of 80?MHz and investigate its resulting gradual modification by means of coherent-phonon spectroscopy. We observe the emergence of a phonon mode at about 3.6?THz whose amplitude and lifetime grow monotonously with irradiation time. The speed of this process depends sensitively on the pump-pulse duration. Our observations strongly indicate that the emerging phonon mode arises from a Te phase induced by multiphoton absorption of incident laser pulses. A potential application of our findings is laser-machining of microstructures in the bulk of a ZnTe crystal, a highly relevant electrooptic material.

Shimada, Toru [Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany); Hirosaki University, 1 Bunkyo-cho, Hirosaki, Aomori 036-8152 (Japan); Kamaraju, N., E-mail: nkamaraju@lanl.gov [Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany); Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Los Alamos, New Mexico 87545 (United States); Frischkorn, Christian [Department of Physics, Free University of Berlin, Arnimallee 14, 14195 Berlin (Germany); Wolf, Martin; Kampfrath, Tobias [Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany)

2014-09-15T23:59:59.000Z

103

1. INTRODUCTION CdTe/CdS solar cells are among the most promising  

E-Print Network [OSTI]

Te/CdS SOLAR CELLS A.Romeo, A.N. Tiwari, and H. Zogg Thin Films Physics Group, Institute of Quantum ElectronicsTe/CdS thin film solar cells. The merits of different TCOs and the properties of the CdTe/CdS solar cells1. INTRODUCTION CdTe/CdS solar cells are among the most promising devices for low cost and high

Romeo, Alessandro

104

Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials  

SciTech Connect (OSTI)

Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

2010-08-01T23:59:59.000Z

105

The PeTroleum InsTITuTe Annual report 2008 -2009 The PeTroleum InsTITuTe  

E-Print Network [OSTI]

PArTmenTs AuP dePArTmenT 8· College of ArTs And sCIenCes 24· ChemICAl engIneerIng dePArTmenT 47· eleCTrICAl engIneerIng dePArTmenT 61· meChAnICAl engIneerIng dePArTmenT 83· PeTroleum engIneerIng dePArTmenT 95· PeTroleumThe PeTroleum InsTITuTe Annual report 2008 - 2009 The PeTroleum InsTITuTe Annual report - Academic

106

Solar Energy Materials & Solar Cells 91 (2007) 13881391 Bifacial configurations for CdTe solar cells  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1388­1391 Bifacial configurations for CdTe solar We present a different back contact for CdTe solar cell by the application of only a transparent that acts as a free-Cu stable back contact and at the same time allows to realize bifacial CdTe solar cells

Romeo, Alessandro

107

PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY  

E-Print Network [OSTI]

349 PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY AND CONTACT BEHAVIOUR P. A. Preliminary results are reported on light scanning of CdTe detectors with a mechanical scanning system using is absorbed in CdTe with an absorption length of appro- ximately 10 gm. The two mirrors were driven

Paris-Sud XI, Université de

108

Optical implementation of entangled multi-spin states in a CdTe quantum well  

E-Print Network [OSTI]

Optical implementation of entangled multi-spin states in a CdTe quantum well J.M. Baoa , A in a CdTe quantum well. Our method, relying on the exchange interaction between optically excited holes; 78.67.De; 42.50.Md Keywords: A. CdTe quantum wells; D. Ultrafast optics; D. Quantum computation; D

Bao, Jiming

109

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe nanocrystal monolayers  

E-Print Network [OSTI]

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe transfer in the heterostructure of layer-by-layer spaced CdTe nanocrystal NC solids. We achieved highly demonstrated efficient FRET in LbL assembled bilayers of CdTe NCs. In another structure, alternating layers

Demir, Hilmi Volkan

110

USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*)  

E-Print Network [OSTI]

343 USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*) K. ZANIO. - The most direct method of increasing the resolution of CdTe gamma ray and x-ray detectors is to increase of Environmental and Biomedical Research. doped CdTe. Devices do not polarize as those having blocking contacts

Paris-Sud XI, Université de

111

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE  

E-Print Network [OSTI]

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION

Sites, James R.

112

USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN  

E-Print Network [OSTI]

375 USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN Nuclear Medicine. Cet ensemble emploie des détecteurs CdTe mesurant la transmission d'un faisceau collimaté de rayons X periods of prolonged bedrest or weightlessness. The unit employs CdTe detectors to mea- sure

Paris-Sud XI, Université de

113

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric generator  

E-Print Network [OSTI]

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric at nonresonant interaction, thus allowing a study of time-resolved carrier transport in CdTe crystals to be made space-charge SC electric fields have been studied in vanadium or germanium doped semi-insulating CdTe

Boyer, Edmond

114

IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS  

E-Print Network [OSTI]

141 IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS S. BRELANT The Aerospace been made in the quality of chlorine-doped CdTe crystals manufactured by the traveling heater method applications of CdTe gamma ray detectors has been the continuous measurement of ablating materials

Paris-Sud XI, Université de

115

CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe  

E-Print Network [OSTI]

117 CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe T. TAGUCHI, J and holes are obtained. REVUE DE PHYSIQUE APPLIQUÃ?E TOME 12, FÃ?VRIER 1977, PAGE 117 1. Introduction. - CdTe during donor doping since CdTe has a strong tendency for self compensation However, in spite of a great

Paris-Sud XI, Université de

116

APPLICATIONS OF CdTe. A REVIEW Mobil Tyco Solar Energy Corporation, 16 Hickory Drive  

E-Print Network [OSTI]

APPLICATIONS OF CdTe. A REVIEW F. V. WALD Mobil Tyco Solar Energy Corporation, 16 Hickory Drive sont également données. Abstract. 2014 The review considers the history of CdTe in short form advanced. II. APPLICATIONS OF CADMIUM TELLURIDE AND DEVICES BASED ON THIS MATERIAL. Section II. 1 : CdTe

Paris-Sud XI, Université de

117

CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI  

E-Print Network [OSTI]

255 CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI seront discutés dans le cas où elles sont mises en 0153uvre sur CdTe. Abstract. 2014 Thermally stimulated current (TSC) and space-charge limited current (SCLC) measurements have been performed in CdTe grown

Paris-Sud XI, Université de

118

BIOTELEMETRY BASED ON CdTe-DETECTORS J. BOJSEN, N. ROSSING, O. SOEBERG and S. VADSTRUP  

E-Print Network [OSTI]

radionuclide detectors (CdTe) 2-3 mm3 (developed by C. R. N. Strasbourg) have been tested with special to the skin for surface detection [2, 3]. Among several new semiconductor materials the cadmium telluride (CdTe. - The detector probe, developed by C. R. N., Strasbourg, France, consists of a CdTe- crystal (2-3 mm

Paris-Sud XI, Université de

119

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION  

E-Print Network [OSTI]

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION A.O. Pudov, M. Gloeckler, S of Mechanical Engineering Colorado State University, Ft. Collins, CO 80523 ABSTRACT CdTe solar cells were Copper is commonly used to form low-barrier contacts to p-type CdTe absorbers. Copper, however, is a fast

Sites, James R.

120

CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD  

E-Print Network [OSTI]

185 CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD R. STUCK, J. C. MULLER techniques of cadmium tellu- ride crystals (CdTe) allowed to obtain high resistivity crystals of detector shape of the phase diagram of CdTe, it seemed interesting to characterize these materials in order

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells , Ana Kanevce2  

E-Print Network [OSTI]

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells Tao Song1 , Ana Kanevce2 National Renewable Energy Laboratory, Golden, CO, 80401, USA Abstract -- Traditional polycrystalline CdTeV and ~ 20%. Epitaxial CdTe with high-quality, low defect-density, and high carrier density, could yield

Sites, James R.

122

Biaxial CdTe/CaF2 films growth on amorphous surface , F. Tang a  

E-Print Network [OSTI]

electron microscopy Metal organic chemical vapor deposition A continuous and highly biaxially textured CdTe nanorods as a buffer layer. The interface between the CdTe film and CaF2 nanorods and the morphology of the CdTe film were studied by transmission electron microscopy (TEM) and scanning electron microscopy

Wang, Gwo-Ching

123

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance.  

E-Print Network [OSTI]

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance. The majority of minority carrier lifetime (MCL) studies performed on CdS/CdTe photovoltaic (PV) devices have Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices." Proc. 37th IEEE Photovoltaic

124

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

125

Carbon Sequestration in Terrestrial Ecosystems (CSiTE) PRINCIPAL INVESTIGATOR: Stan D. Wullschleger  

E-Print Network [OSTI]

Carbon Sequestration in Terrestrial Ecosystems (CSiTE) PRINCIPAL INVESTIGATOR: Stan D. Wullschleger://csite.eds.ornl.gov PROJECT DESCRIPTION The Carbon Sequestration in Terrestrial Ecosystems (CSiTE) project conducts research of switchgrass growing in the field. #12;Carbon Sequestration in Terrestrial Ecosystems (CSiTE) tion of inputs

126

Results of a Si/CdTe Compton Telescope  

E-Print Network [OSTI]

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).

Kousuke Oonuki; Takaaki Tanaka; Shin Watanabe; Shin'ichiro Takeda; Kazuhiro Nakazawa; Takefumi Mitani; Tadayuki Takahashi; Hiroyasu Tajima; Yasushi Fukazawa; Masaharu Nomachi

2005-09-21T23:59:59.000Z

127

Ion-beam-induced damage formation in CdTe  

SciTech Connect (OSTI)

Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that the high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.

Rischau, C. W.; Schnohr, C. S.; Wendler, E.; Wesch, W. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2011-06-01T23:59:59.000Z

128

Diffuse TeV Emission at the Galactic Centre  

E-Print Network [OSTI]

The High-Energy Stereoscopic System (HESS) has detected intense diffuse TeV emission correlated with the distribution of molecular gas along the galactic ridge at the centre of our Galaxy. Earlier HESS observations of this region had already revealed the presence of several point sources at these energies, one of them (HESS J1745-290) coincident with the supermassive black hole Sagittarius A*. It is still not entirely clear what the origin of the TeV emission is, nor even whether it is due to hadronic or leptonic interactions. It is reasonable to suppose, however, that at least for the diffuse emission, the tight correlation of the intensity distribution with the molecular gas indicates a pionic-decay process involving relativistic protons. In this paper, we explore the possible source(s) of energetic hadrons at the galactic centre, and their propagation through a turbulent medium. We conclude that though Sagittarius A* itself may be the source of cosmic rays producing the emission in HESS J1745-290, it cannot be responsible for the diffuse emission farther out. A distribution of point sources, such as pulsar wind nebulae dispersed along the galactic plane, similarly do not produce a TeV emission profile consistent with the HESS map. We conclude that only a relativistic proton distribution accelerated throughout the inter-cloud medium can account for the TeV emission profile measured with HESS.

Elizabeth Wommer; Fulvio Melia; Marco Fatuzzo

2008-04-18T23:59:59.000Z

129

AL TE X 2" The macro package for TEX  

E-Print Network [OSTI]

such as xdvi, which actually uses the `.dvi' file. 2.A "transcript" or `.log' file that contains summary-201-13448-9, published jointly by the American Mathemat* *ical Society and Addison-Wesley Publishing Company-Wesley Publ* *ish- ing Company, 2nd edition, 1994. The LaTeX Companion, by Michel Goossens, Frank

Mintmire, John W.

130

Simple shear processing of bulk BI?TE? alloys  

E-Print Network [OSTI]

The objective of this work is to determine the appropriate extrusion conditions of cast Bi?Te? alloys via equal channel angular extrusion (ECAE) to produce material that has a fine grain size (5~30[]m), uniform grain morphology and low grain...

Im, Jae-taek

2001-01-01T23:59:59.000Z

131

TeV Particle Astrophysics II: Summary comments  

E-Print Network [OSTI]

A unifying theme of this conference was the use of different approaches to understand astrophysical sources of energetic particles in the TeV range and above. In this summary I review how gamma-ray astronomy, neutrino astronomy and (to some extent) gravitational wave astronomy provide complementary avenues to understanding the origin and role of high-energy particles in energetic astrophysical sources.

Thomas K. Gaisser

2006-12-11T23:59:59.000Z

132

STAFF POSITION DESCRIPTION SAN JOSE STA TE HUMAN RESOURCES  

E-Print Network [OSTI]

STAFF POSITION DESCRIPTION SAN JOSE STA TE HUMAN RESOURCES UNIVERSITY Workforce Planning l: 408-924-2250 I408-924-1784 (fax) Job Description Staff Date: Workforce Planning, Human Resources (Name [Workforce Planning reviews the CSU classification standards with essential duties of the positions] F

Su, Xiao

133

The Docket Vol. 29 No. 3  

E-Print Network [OSTI]

have not confirmed that _porno- graphy is a direct cause ofvolatile approach to the porno- graphy issue proved tobeand for isolation of porno- graphy in adult book stores (

UCLA Law School

1980-01-01T23:59:59.000Z

134

Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well  

SciTech Connect (OSTI)

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Han, W. I.; Lee, J. H.; Yu, J. S.; Choi, J. C. [Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of); Lee, H. S. [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2011-12-05T23:59:59.000Z

135

Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses  

SciTech Connect (OSTI)

Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

Abdel-Baset, A. M.; Rashad, M. [Physics Department, Faculty of Science , Assiut University, Assiut, P.O. Box 71516 (Egypt); Moharram, A. H. [Faculty of Science, King Abdul Aziz Univ., Rabigh Branch, P.O. Box 433 (Saudi Arabia)

2013-12-16T23:59:59.000Z

136

Exploring Resonance Levels and Nanostructuring in the PbTe?CdTe System and Enhancement of the Thermoelectric Figure of Merit  

SciTech Connect (OSTI)

We explored the effect of Cd substitution on the thermoelectric properties of PbTe in an effort to test a theoretical hypothesis that Cd atoms on Pb sites of the rock salt lattice can increase the Seebeck coefficient via the formation of a resonance level in the density of states near the Fermi energy. We find that the solubility of Cd is less than previously reported, and CdTe precipitation occurs to create nanostructuring, which strongly suppresses the lattice thermal conductivity. We present detailed characterization including structural and spectroscopic data, transmission electron microscopy, and thermoelectric transport properties of samples of PbTe?x% CdTe?0.055% PbI{sub 2} (x = 1, 3, 5, 7, 10), PbTe?1% CdTe?y% PbI{sub 2} (y = 0.03, 0.045, 0.055, 0.08, 0.1, 0.2), PbTe?5% CdTe?y% PbI{sub 2} (y = 0.01, 0.03, 0.055, 0.08), and PbTe?1% CdTe?z% Sb (z = 0.3, 0.5, 1, 1.5, 2, 3, 4, 5, 6). All samples follow the Pisarenko relationship, and no enhancement of the Seebeck coefficient was observed that could be attributed to a resonance level or a distortion in the density of states. A maximum ZT of 1.2 at 720 K was achieved for the PbTe?1% CdTe?0.055% PbI{sub 2} sample arising from a high power factor of 17 ?W/(cm K{sup 2}) and a very low lattice thermal conductivity of 0.5 W/(m K) at 720 K.

Ahn, Kyunghan; Han, Mi-Kyung; He, Jiaqing; Androulakis, John; Ballikaya, Sedat; Uher, Ctirad; Dravid, Vinayak; Kanatzidis, Mercouri G.

2010-01-01T23:59:59.000Z

137

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe quantum dots  

E-Print Network [OSTI]

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe 20 October 2008 We demonstrate high-performance photodetectors from multilayers of CdTe quantum dots. The synthesis of CdTe QDs in aqueous solution using cadmium perchlorate hydrate and Al2Te3 was previously re

Lin, Lih Y.

138

ROLE OF COPPER IN THE PERFORMANCE OF CdS/CdTe SOLAR CELLS * , D. Albin2  

E-Print Network [OSTI]

simulations to reproduce and explain some of the experimental results. Introduction The performance of CdTe Cucd in CdTe [1,2]. Cu can also migrate along grain boundaries toward the main junction. The standard with a relatively simpler one in which Cu metal of varying thickness is evaporated on Te-rich CdTe surfaces

Sites, James R.

139

1. INTRODUCTION CdTe/CdS is one of the most promising solar cell for low  

E-Print Network [OSTI]

with CdTe grown by close space sublimation, electrodeposition, spray pyrolysis, vacuum evaporation and RF conversion of CdTe layers, as well as for the intermixing of CdS-CdTe. An optimum annealing condition is required for the formation of an appropriate CdTe1-x-Sx intermixed interface. It is desirable to separately

Romeo, Alessandro

140

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Evidence for TeV Emission from GRB 970417a  

E-Print Network [OSTI]

Milagrito, a detector sensitive to very high energy gamma rays, monitored the northern sky from February 1997 through May 1998. With a large field of view and a high duty cycle, this instrument was well suited to perform a search for TeV gamma-ray bursts (GRBs). We report on a search made for TeV counterparts to GRBs observed by BATSE. BATSE detected 54 GRBs within the field of view of Milagrito during this period. An excess of events coincident in time and space with one of these bursts, GRB 970417a, was observed by Milagrito. The excess has a chance probability of $2.8 \\times 10^{-5}$ of being a fluctuation of the background. The probability for observing an excess at least this large from any of the 54 bursts is $1.5 \\times 10^{-3}$. No significant correlations were detected from the other bursts.

Atkins, R; Berley, D; Chen, M L; Coyne, D G; Dingus, B L; Dorfan, D E; Ellsworth, R W; Evans, D; Falcone, A D; Fleysher, L; Fleysher, R; Gisler, G; Goodman, J A; Haines, T J; Hoffman, C M; Hugenberger, S; Kelley, L A; Leonor, I; McConnell, M; McCullough, J F; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Ryan, J M; Shen, B; Shoup, A L; Sinnis, C; Smith, A J; Sullivan, G W; Tümer, T O; Wang, K; Wascko, M O; Westerhoff, S; Williams, D A; Yang, T; Yodh, G B

2000-01-01T23:59:59.000Z

142

Point Defect Characterization in CdZnTe  

SciTech Connect (OSTI)

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

2009-03-24T23:59:59.000Z

143

Evidence for TeV Emission from GRB 970417a  

E-Print Network [OSTI]

Milagrito, a detector sensitive to very high energy gamma rays, monitored the northern sky from February 1997 through May 1998. With a large field of view and a high duty cycle, this instrument was well suited to perform a search for TeV gamma-ray bursts (GRBs). We report on a search made for TeV counterparts to GRBs observed by BATSE. BATSE detected 54 GRBs within the field of view of Milagrito during this period. An excess of events coincident in time and space with one of these bursts, GRB 970417a, was observed by Milagrito. The excess has a chance probability of $2.8 \\times 10^{-5}$ of being a fluctuation of the background. The probability for observing an excess at least this large from any of the 54 bursts is $1.5 \\times 10^{-3}$. No significant correlations were detected from the other bursts.

The Milagro Collaboration; R. Atkins; W. Benbow; D. Berley; M. L. Chen; D. G. Coyne; B. L. Dingus; D. E. Dorfan; R. W. Ellsworth; D. Evans; A. Falcone; L. Fleysher; R. Fleysher; G. Gisler; J. A. Goodman; T. J. Haines; C. M. Hoffman; S. Hugenberger; L. A. Kelley; I. Leonor; M. McConnell; J. F. McCullough; J. E. McEnery; R. S. Miller; A. I. Mincer; M. F. Morales; P. Nemethy; J. M. Ryan; B. Shen; A. Shoup; C. Sinnis; A. J. Smith; G. W. Sullivan; T. Tumer; K. Wang; M. O. Wascko; S. Westerhoff; D. A. Williams; T. Yang; G. B. Yodh

2000-01-07T23:59:59.000Z

144

High-efficiency large-area CdTe panels  

SciTech Connect (OSTI)

The objective of this three year effort has been to develop an improved materials technology and fabrication process for limited volume production of 1 ft{sup 2} and 4 ft{sup 2} CdS/CdTe photovoltaic modules. The module stability objective by the end of this three year subcontract was to develop techniques to provide ten year life exploration with no greater than 10% degradation. In order to achieve these efficiency and stability objectives, the research program has been separated into tasks including: (1) analysis and characterization of CdS/CdTe Devices; (2) performance optimization on small cells; (3) encapsulation and stability testing; and (4) module efficiency optimization. 27 refs., 18 figs., 3 tabs.

Albright, S.P.; Chamberlin, R.R.; Jordan, J.F. (Photon Energy, Inc., El Paso, TX (USA))

1990-11-01T23:59:59.000Z

145

Charge transport properties of CdMnTe radiation detectors  

SciTech Connect (OSTI)

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11T23:59:59.000Z

146

NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND ZnSe  

E-Print Network [OSTI]

-frequency and wavelength- tunable radiation from the ultraviolet to the far infrared region of the spectrum. Typical optical coefficients, (iii) the crystal must resist damage at the high power densities required405 NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND Zn

Boyer, Edmond

147

RARE B MESON DECAYS T.E. Browder \\Lambda  

E-Print Network [OSTI]

Supported by the US Department of Energy c fl 2002 by T.E. Browder #12; 1 Introduction, Motivation on the construction of the Standard Model of particle physics. Recall that in a physical picture with only three. As a result, the weak neutral current, J 0 NC , J 0 NC = u¯u + d c ¯ d c + s c ¯ s c (2) = u¯u + d ¯ d cos 2

Browder, Tom

148

Milagrito Detection of TeV Emission from Mrk 501  

E-Print Network [OSTI]

The Milagro water Cherenkov detector near Los Alamos, New Mexico, has been operated as a sky monitor at energies of a few TeV between February 1997 and April 1998. Serving as a test run for the full Milagro detector, Milagrito has taken data during the strong and long-lasting 1997 flare of Mrk 501. We present results from the analysis of Mrk 501 and compare the excess and background rates with expectations from the detector simulations.

Atkins, R; Berley, D; Chen, M L; Coyne, D G; Delay, R S; Dingus, B L; Dorfan, D E; Ellsworth, R W; Evans, D; Falcone, A D; Fleysher, L; Fleysher, R; Gisler, G; Goodman, J A; Haines, T J; Hoffman, C M; Hugenberger, S; Kelley, L A; Leonor, I; Macri, J R; McConnell, M; McCullough, J F; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Ryan, J M; Schneider, M; Shen, B; Shoup, A L; Sinnis, G; Smith, A J; Sullivan, G W; Thompson, T N; Tümer, T O; Wang, K; Wascko, M O; Westerhoff, S; Williams, D A; Yang, T; Yodh, G B

1999-01-01T23:59:59.000Z

149

Milagrito Detection of TeV Emission from Mrk 501  

E-Print Network [OSTI]

The Milagro water Cherenkov detector near Los Alamos, New Mexico, has been operated as a sky monitor at energies of a few TeV between February 1997 and April 1998. Serving as a test run for the full Milagro detector, Milagrito has taken data during the strong and long-lasting 1997 flare of Mrk 501. We present results from the analysis of Mrk 501 and compare the excess and background rates with expectations from the detector simulations.

R. Atkins; W. Benbow; D. Berley; M. -L. Chen; D. G. Coyne; R. S. Delay; B. L. Dingus; D. E. Dorfan; R. W. Ellsworth; D. Evans; A. Falcone; L. Fleysher; R. Fleysher; G. Gisler; J. A. Goodman; T. J. Haines; C. M. Hoffman; S. Hugenberger; L. A. Kelley; I. Leonor; J. Macri; M. McConnell; J. F. McCullough; J. E. McEnery; R. S. Miller; A. I. Mincer; M. F. Morales; P. Nemethy; J. M. Ryan; M. Schneider; B. Shen; A. Shoup; G. Sinnis; A. J. Smith; G. W. Sullivan; T. N. Thompson; O. T. Tumer; K. Wang; M. O. Wascko; S. Westerhoff; D. A. Williams; T. Yang; G. B. Yodh

1999-06-24T23:59:59.000Z

150

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

151

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect (OSTI)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

152

Directional correlation measurements for gamma transitions in /sup 127/Te  

SciTech Connect (OSTI)

The directional correlation of coincident ..gamma.. transitions in /sup 127/Te has been measured following the ..beta../sup -/ decay of /sup 127/Sb (T/sub 1/2/ = 3.9 d) using Ge(Li)-Ge(Li) and Ge(Li)-NaI(T1) gamma spectrometers. Measurements have been carried out for 14 gamma cascades resulting in the determination of multipole mixing ratios delta(E2/M1) for 15 ..gamma.. transitions. The present results permitted a definite spin assignment of (7/2) for the 785 keV level and confirmation of several previous assignments to other levels in /sup 127/Te. The g factor of the 340 keV ((9/2)/sup -/) level has also been measured using the integral perturbed angular correlation method in the hyperfine magnetic field of a Te in Ni matrix. The results of the g factor as well as the mixing ratio for the 252 keV ((9/2)/sup -/..-->..(11/2)/sup -/) transition support the earlier interpretation of this state as an anomalous coupling state.

de Souza, M.O.M.D.; Saxena, R.N.

1985-02-01T23:59:59.000Z

153

A New Limit on the Neutrinoless DBD of 130Te  

E-Print Network [OSTI]

We report the present results of CUORICINO a cryogenic experiment on neutrinoless double beta decay (DBD) of 130Te consisting of an array of 62 crystals of TeO2 with a total active mass of 40.7 kg. The array is framed inside of a dilution refrigerator, heavily shielded against environmental radioactivity and high-energy neutrons, and operated at a temperature of ~8 mK in the Gran Sasso Underground Laboratory. Temperature pulses induced by particle interacting in the crystals are recorded and measured by means of Neutron Transmutation Doped thermistors. The gain of each bolometer is stabilized with voltage pulses developed by a high stability pulse generator across heater resistors put in thermal contact with the absorber. The calibration is performed by means of two thoriated wires routinely inserted in the set-up. No evidence for a peak indicating neutrinoless DBD of 130Te is detected and a 90% C.L. lower limit of 1.8E24 years is set for the lifetime of this process. Taking largely into account the uncertainties in the theoretical values of nuclear matrix elements, this implies an upper boud on the effective mass of the electron neutrino ranging from 0.2 to 1.1 eV. This sensitivity is similar to those of the 76Ge experiments.

C. Arnaboldi; D. R. Artusa; F. T. Avignone III; M. Balata; I. Bandac; M. Barucci; J. W. Beeman; C. Brofferio; C. Bucci; S. Capelli; L. Carbone; S. Cebrian; O. Cremonesi; R. J. Creswick; A. de Waard; H. A. Farach; E. Fiorini; G. Frossati; E. Guardincerri; A. Giuliani; P. Gorla; E. E. Haller; J. McDonald; E. B. Norman; A. Nucciotti; E. Olivieri; M. Pallavicini; E. Palmieri; E. Pasca; M. Pavan; M. Pedretti; G. Pessina; S. Pirro; E. Previtali; L. Risegari; C. Rosenfeld; S. Sangiorgio; M. Sisti; A. R. Smith; L. Torres; G. Ventura

2005-01-13T23:59:59.000Z

154

TeV Scale Lepton Number Violation and Baryogenesis  

E-Print Network [OSTI]

Contrary to the common lore based on naive dimensional analysis, the seesaw scale for neutrino masses can be naturally in the TeV range, with small parameters coming from radiative corrections. We present one such class of type-I seesaw models, based on the left-right gauge group $SU(2)_L\\times SU(2)_R\\times U(1)_{B-L}$ realized at the TeV scale, which fits the observed neutrino oscillation parameters as well as other low energy constraints. We discuss how the small parameters of this scenario can arise naturally from one loop effects. The neutrino fits in this model use quasi-degenerate heavy Majorana neutrinos, as also required to explain the matter-antimatter asymmetry in our Universe via resonant leptogenesis mechanism. We discuss the constraints implied by the dynamics of this mechanism on the mass of the right-handed gauge boson in this class of models with enhanced neutrino Yukawa couplings compared to the canonical seesaw model and find a lower bound of $m_{W_R}\\geq 9.9$ TeV for successful leptogenesi...

Dev, P S Bhupal; Mohapatra, R N

2015-01-01T23:59:59.000Z

155

Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320  

SciTech Connect (OSTI)

The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

Dhere, R.

2012-04-01T23:59:59.000Z

156

Effect of Te Inclusions on Internal Electric Field of CdMnTe Gamma-Ray Detectors  

SciTech Connect (OSTI)

We studied two separate as-grown CdMnTe crystals by Infrared (IR) microscopy and Pockels effect imaging, and then developed an algorithm to analyze and visualize the electric field within the crystals’ bulk. In one of the two crystals the size and distribution of inclusions within the bulk promised to be more favorable in terms of efficiency as a detector crystal. However, the Te inclusions were arranged in characteristic ‘planes’. Pockels imaging revealed an accumulation of charges in the region of these planes. We demonstrated that the planes induced stress within the bulk of the crystal that accumulated charges, thereby causing non-uniformity of the internal electric field and degrading the detector’s performance.

Babalola, O.S.; Bolotnikov, A.; Egarievwe, S.; Hossain, A.; Burger, A.; James, R.

2009-08-02T23:59:59.000Z

157

First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells  

SciTech Connect (OSTI)

Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

Du, Mao-Hua [ORNL

2009-01-01T23:59:59.000Z

158

Multi-TeV flaring from blazars: Markarian 421 a case study  

E-Print Network [OSTI]

The TeV blazar Markarian 421 underwent multi-TeV flaring during April 2004 and simultaneously observed in x-ray and TeV energies. It was observed that the TeV outbursts had no counterparts in the lower energies, which implies that this might be an orphan flare. In the context of hadronic model, we have shown that this multi-TeV flaring can be produced due to the interaction of Fermi-accelerated protons of energy $\\lesssim 168$ TeV with the background photons in the low energy tail of the synchrotron self-Compton spectrum of the blazar jet. We fit very well the flaring spectrum with this model. Based on this study, we speculate that Mrk 501 and PG 1553+113 are possible candidates for orphan flaring in the future.

Sahu, Sarira; Rajpoot, Subhash

2015-01-01T23:59:59.000Z

159

The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x  

SciTech Connect (OSTI)

We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe2 with ZT ~ 1.0 at 840K.

Ye, Zuxin [GM Research and Development Center; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Tessema, Misle [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Waldo, Richard [GM R& D and Planning, Warren, Michigan; Wang, Hsin [ORNL; Cai, Wei [ORNL

2013-01-01T23:59:59.000Z

160

DETERMINATION AND CHARACTERIZATION OF DEEP LEVELS IN p-CdTe(Cl)  

E-Print Network [OSTI]

photons de 122 keV (57Co) et de 5 keV pour des photons de 59 keV (241Am). Abstract. 2014 CdTe single doped CdTe single crystals grown from tellurium solvent have a good resolution for gamma-rays, when. The investigation of the energy levels system of charged centres in CdTe, as well as in other II-VI compounds

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network [OSTI]

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells Ken K. Chin n Department of Physics and Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ 07058, USA a r t i c l e May 2010 Keywords: CdTe p-Doping Hole density Non-shallow Acceptor Activation energy a b s t r a c

162

ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CdTe : Cl  

E-Print Network [OSTI]

239 ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CdTe : Cl E. N. ARKADYEVA and O. A. MATVEEV A Des mesures d'effet Hall et de conductivité sont effectuées sur des cristaux de CdTe, dopé au chlore and conductivity measurement are carried out on chlorine doped semi- insulating CdTe crystals, of p and n electric

Boyer, Edmond

163

High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011  

SciTech Connect (OSTI)

The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

Carmody, M.; Gilmore, A.

2011-05-01T23:59:59.000Z

164

Voltage Dependent Carrier Collection in CdTe Solar Cells D.L. Btzner1  

E-Print Network [OSTI]

Voltage Dependent Carrier Collection in CdTe Solar Cells D.L. Bätzner1 , Guido Agostinelli2 , A to 1000nm, i.e. the band edge region of CdTe. Region I is further divided in a `blue' part between 300 nm III is as well subdivided in region IIIa from about 800 nm to the band gap of CdTe (~850 nm

Romeo, Alessandro

165

CdTe OPTICAL WAVEGUIDE MODULATORS (*) D. L. SPEARS and A. J. STRAUSS  

E-Print Network [OSTI]

401 CdTe OPTICAL WAVEGUIDE MODULATORS (*) D. L. SPEARS and A. J. STRAUSS Lincoln Laboratory guides d'ondes opto-acoustiques et opto-électriques ont été réalisés dans des guides d'ondes n-/n+ CdTe-électriques de faible tension ont été réalisés en appliquant des électrodes en or sur des plaquettes n+ de CdTe

Paris-Sud XI, Université de

166

ELECTROABSORPTION BY IMPURITIES AND DEFECTS IN SEMI-INSULATING CdTe  

E-Print Network [OSTI]

263 ELECTROABSORPTION BY IMPURITIES AND DEFECTS IN SEMI-INSULATING CdTe G. NEU, Y. MARFAING, R des défauts dans CdTe compensé non dopé et dopé au chlore de 1,2 à 1,6 eV. Trois groupes de symétrie. Abstract. 2014 Electroabsorption experiments have been conducted on semi-insulating CdTe prepared

Paris-Sud XI, Université de

167

CdTe-Cu(OH){sub 2} nanocomposite: Aqueous synthesis and characterization  

SciTech Connect (OSTI)

CdTe-Cu(OH){sub 2} nanocomposites were synthesized in aqueous solution by a seed-mediated growth approach. The effect of refluxing time and the concentration of Cu{sup 2+} on the preparation of these samples were measured using UV-visible absorption and photoluminescence analysis. The emission peak of the synthesized nanocomposites (CdTe-Cu(OH){sub 2}) was shifted from 605 (CdTe seed) to 621 nm. The size of CdTe nanoparticles were averaged about 3.22 nm, and the CdTe-Cu(OH){sub 2} nanocomposites were averaged as 5.19 nm. The synthesized CdTe-Cu(OH){sub 2} nanocomposite were characterized with XRD, EDAX, TEM, FT-IR, EPR, and thermal analysis (TG/DTG curves). The results indicate that as-prepared nanoparticles with core/shell structure exhibit interesting optical properties. -- Graphical Abstract: Schematic of aqueous synthesis route for CdTe-Cu(OH){sub 2} nanocomposite and The Stokes shift of CdTe nanocrystals and CdTe-Cu(OH){sub 2} Nanocomposites, (CdTe: emission at 605 nm, CdTe-Cu(OH){sub 2}: emission at 621 nm). Display Omitted Highlights: {yields} CdTe-Cu(OH){sub 2} nanocomposites were synthesized by a seed-mediated growth approach. {yields} The synthetic procedure is simple, and can be easily scaled up. {yields} The effect of refluxing time on the preparation of these samples was measured. {yields} The Cu(OH){sub 2} shell thickness was controlled by the amount of Cu in the solution. {yields} TEM images demonstrated homogeneous size distribution for these nanocomposites.

Abd El-sadek, M.S., E-mail: el_sadek_99@yahoo.co [Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt); Crystal Growth Centre, Anna University Chennai, Chennai 600025 (India); Moorthy Babu, S. [Crystal Growth Centre, Anna University Chennai, Chennai 600025 (India)

2011-05-15T23:59:59.000Z

168

DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells  

E-Print Network [OSTI]

OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdDISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine

Sites, James R.

169

Superficies y Vacio 8, 69-72(1999) Sociedad Mexicana de Ciencias de Superficies y de Vaco. Electronic properties of (CdTe)x(In2Te3)1-x thin films grown by close spaced vapor  

E-Print Network [OSTI]

(CSVT-FE); CdTe and In2Te3 were employed as sources. The temperature of evaporation of the CdTe and In2 the band gap energy from a value as low as 0.6 eV up to 1.5 eV, the band gap of CdTe. It has been reported I. INTRODUCTION The ternary compound CdIn2Te4 is of interest since all compounds formed by mixing CdTe

Meléndez Lira, Miguel Angel

170

Fabrication of ultra thin CdS/CdTe solar cells by magnetron sputtering.  

E-Print Network [OSTI]

?? CdTe is a nearly perfect absorber material for second generation polycrystalline solar cells because the bandgap closely matches the peak of the solar spectrum,… (more)

Plotnikov, Victor

2009-01-01T23:59:59.000Z

171

Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al.  

E-Print Network [OSTI]

??In this work the techniques of hot wall epitaxy (HWE) and molecular beam epitaxy (MBE) on thin films of CdTe (cadmium telluride) were used in… (more)

Denis Rafael de Oliveira Pereira

2011-01-01T23:59:59.000Z

172

Some possible sources of IceCube TeV-PeV neutrino events  

E-Print Network [OSTI]

The IceCube Collaboration has observed 37 neutrino events in the energy range $30\\, {\\text TeV}\\lesssim E_{\

Sarira Sahu; Luis Salvador Miranda

2014-08-21T23:59:59.000Z

173

E-Print Network 3.0 - arond te dual-axis Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Michigan University Collection: Mathematics 62 BunchTiming Measurement in the Muon Cooling Experiment Summary: Bunch-Timing Measurement in the Muon Cooling Experiment Via TE...

174

Electrical properties of PbTe single crystals with excess tellurium  

SciTech Connect (OSTI)

The effects of excess (up to 0.1 at %) Te atoms and heat treatment at 473 and 573 K for 120 h on the conductivity {sigma}, thermopower {alpha}, and Hall coefficient R of PbTe single crystals are studied. It is shown that excess Te atoms and annealing strongly affect the values and character of the temperature dependences of these parameters and the signs of {alpha} and R at low temperatures, which is caused by the acceptor effect of these atoms and the formation of antisite defects due to localization of Te in vacancies of the lead sublattice upon annealing.

Bagiyeva, G. Z., E-mail: bagieva-gjulandam@rambler.ru; Mustafayev, N. B.; Abdinova, G. Dj.; Abdinov, D. Sh. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2011-11-15T23:59:59.000Z

175

TeV Astrophysics Constraints on Planck Scale Lorentz Violation  

E-Print Network [OSTI]

We analyze observational constraints from TeV astrophysics on Lorentz violating nonlinear dispersion for photons and electrons without assuming any a priori equality between the photon and electron parameters. The constraints arise from thresholds for vacuum Cerenkov radiation, photon decay and photo-production of electron-positron pairs. We show that the parameter plane for cubic momentum terms in the dispersion relations is constrained to an order unity region in Planck units. We find that the threshold configuration can occur with an asymmetric distribution of momentum for pair creation, and with a hard photon for vacuum Cerenkov radiation.

Ted Jacobson; Stefano Liberati; David Mattingly

2002-09-24T23:59:59.000Z

176

Electromagnetic leptogenesis at the TeV scale  

E-Print Network [OSTI]

We construct an explicit model implementing electromagnetic leptogenesis. In a simple extension of the Standard Model, a discrete symmetry forbids the usual decays of the right-handed neutrinos, while allowing for an effective coupling between the left-handed and right-handed neutrinos through the electromagnetic dipole moment. This generates correct leptogenesis with resonant enhancement and also the required neutrino mass via a TeV scale seesaw mechanism. The model is consistent with low energy phenomenology and would have distinct signals in the next generation colliders, and, perhaps even the LHC.

Debajyoti Choudhury; Namit Mahajan; Sudhanwa Patra; Utpal Sarkar

2011-04-11T23:59:59.000Z

177

Substrate CdTe Efficiency Improvements - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTe Efficiency

178

TeVSymposium12MasterDB (PPD-115151)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAboutManus Site-InactiveLaboratory TeV Physics

179

Effect of shells on photoluminescence of aqueous CdTe quantum dots  

SciTech Connect (OSTI)

Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

Yuan, Zhimin; Yang, Ping, E-mail: mse_yangp@ujn.edu.cn

2013-07-15T23:59:59.000Z

180

Constraints on the TeV source population and its contribution to the galactic diffuse TeV emission  

E-Print Network [OSTI]

The detection by the HESS atmospheric Cerenkov telescope of fourteen new sources from the Galactic plane makes it possible to estimate the contribution of unresolved sources like those detected by HESS to the diffuse Galactic emission measured by the Milagro Collaboration. The number-intensity relation and the luminosity function for the HESS source population are investigated. By evaluating the contribution of such a source population to the diffuse emission we conclude that a significant fraction of the TeV energy emission measured by the Milagro experiment could be due to unresolved sources like HESS sources. Predictions concerning the number of sources which Veritas, Milagro, and HAWC should detect are also given.

Casanova, Sabrina

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Constraints on the TeV source population and its contribution to the galactic diffuse TeV emission  

E-Print Network [OSTI]

The detection by the HESS atmospheric Cerenkov telescope of fourteen new sources from the Galactic plane makes it possible to estimate the contribution of unresolved sources like those detected by HESS to the diffuse Galactic emission measured by the Milagro Collaboration. The number-intensity relation and the luminosity function for the HESS source population are investigated. By evaluating the contribution of such a source population to the diffuse emission we conclude that a significant fraction of the TeV energy emission measured by the Milagro experiment could be due to unresolved sources like HESS sources. Predictions concerning the number of sources which Veritas, Milagro, and HAWC should detect are also given.

Sabrina Casanova; Brenda L. Dingus

2007-11-19T23:59:59.000Z

182

Superficies y Vaco 12, 16-19, Junio 2001 Sociedad Mexicana de Ciencia de Superficies y de Vaco. Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x  

E-Print Network [OSTI]

the closed space vapor transport technique combined with free evaporation. As sources we employed CdTe and In thin films 1. Introduction CdTe and its alloys are versatile optoelectronic materials, some of 1.19 eV and 1.15 eV have been reported [5, 6], suggest the use of the compounds In2Te3 and CdTe

Meléndez Lira, Miguel Angel

183

Advanced CdTe Photovoltaic Technology: September 2007 - March 2009  

SciTech Connect (OSTI)

During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

Barth, K.

2011-05-01T23:59:59.000Z

184

Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys , L. A. Collins2  

E-Print Network [OSTI]

in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via the discovery of materials with a high thermoelectric figure of merit, zT, defined as S2 T/, where immiscible thermoelectric materials: PbTe-Sb2Te3. This ternary system was selected for investigation because

185

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells  

E-Print Network [OSTI]

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

Pulfrey, David L.

186

Interconnected Slums: Water, Sanitation and Health in Abidjan, Co^te d'Ivoire  

E-Print Network [OSTI]

Interconnected Slums: Water, Sanitation and Health in Abidjan, Co^te d'Ivoire BRIGIT OBRIST, GUE contributed to this paper are: Gue´ladio Cisse´ (Centre Suisse de Recherches Scientifiques, Abidjan, Co^te d'Ivoire´tude de cas comparative, il examine les re´ponses aux proble`mes environnementaux dans un contexte aussi

Richner, Heinz

187

A Search for TeV Emission from Active Galaxies using the Milagro Observatory  

E-Print Network [OSTI]

that observes very high energy gamma rays (100 GeV to 100 TeV) using the water-Cerenkov technique Mexico, Milagro observes most of the Northern Hemisphere over the course of a day. The high duty cycleV candidates. Active galaxies have been observed to be highly variable at TeV energies. To test for episodic

California at Santa Cruz, University of

188

Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope  

E-Print Network [OSTI]

OG 2.3.07 Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope Gus for short duration bursts of TeV photons. Such bursts may result from "traditional" gamma-ray bursts to gamma-ray bursts, the final stages of black hole evaporation) the most compelling reason may

California at Santa Cruz, University of

189

Unusual Otto excitation dynamics and enhanced coupling of light to TE plasmons in graphene  

E-Print Network [OSTI]

Unusual Otto excitation dynamics and enhanced coupling of light to TE plasmons in graphene Daniel R are a unique and unusual aspect of graphene's plasmonic response that are predicted to manifest when the sign plasmons in graphene. We show that TE plasmons supported by graphene in an Otto configuration unusually

Park, Namkyoo

190

Research Overview Seminar Extreme astrophysics: mapping the TeV gamma ray sky  

E-Print Network [OSTI]

and a R&D Array is currently under construction + some neutrino and dark matter experiment R&D · Recent duty cycle, TeV -ray detector · Possibly essential input to the indirect detection of dark matter experiment · Which experiments: High Altitude Water Cherenkov (HAWC) TeV -ray experiment in Mexico (with

191

$?$ and $?$ Production in Proton-Proton Collisions at E=13 TeV  

E-Print Network [OSTI]

This article is an extension of our recent studies of $\\Psi$ and $\\Upsilon$ production cross sections in proton-proton collisions at the LHC with E=$\\sqrt{s}$=8.0 TeV to E=13 TeV

Leonard S. Kisslinger; Debasish Das

2015-02-02T23:59:59.000Z

192

THROUGH-THE-GLASS SPECTROSCOPIC ELLIPSOMETRY OF CdTe SOLAR CELLS  

E-Print Network [OSTI]

THROUGH-THE-GLASS SPECTROSCOPIC ELLIPSOMETRY OF CdTe SOLAR CELLS Jie Chen 1 , Jian Li 1 , Courtney of the optical structure of CdTe solar cells on transparent conducting oxide (TCO) coated glass superstrates. SE components from the coated glass before solar cell fabrication. A step-by-step fitting procedure identifies

Rockett, Angus

193

Bandgap engineering of CdxZn1xTe nanowires Keivan Davami,a  

E-Print Network [OSTI]

junction. These structures have been used in solar cells2,3 and eld effect transistors.4 Alloy nanowires device fabrication. Alloy nano- wires in various systems have been used to construct solar cells into a furnace. In a set of trial experiments, ZnTe (99.99% Aldrich) and CdTe (99.99% Aldrich) source powders

Cuniberti, Gianaurelio

194

Coplanar grid CdZnTe detectors for space science applications Benjamin W. Sturm*a  

E-Print Network [OSTI]

Coplanar grid CdZnTe detectors for space science applications Benjamin W. Sturm*a , Zhong Hea of the latest coplanar grid CdZnTe detectors, which use the third- generation coplanar grid design into the material properties as well as the charge induction uniformity of the detector. Keywords: coplanar grid, Cd

He, Zhong

195

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

196

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . Abstract: Band...

197

Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008  

SciTech Connect (OSTI)

Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.

2009-04-01T23:59:59.000Z

198

Post-Synthesis Crystallinity Tailoring of Water-Soluble Polymer Encapsulated CdTe Nanoparticles using Rapid Thermal Annealing  

E-Print Network [OSTI]

Post-Synthesis Crystallinity Tailoring of Water-Soluble Polymer Encapsulated CdTe Nanoparticles CdTe NPs have been demonstrated suitable for use in applications involving efficient solar cells

199

Optimal width of barrier region in X/{gamma}-ray Schottky diode detectors based on CdTe and CdZnTe  

SciTech Connect (OSTI)

The spectral distribution of quantum detection efficiency of X- and {gamma}-ray Schottky diodes based on semi-insulating CdTe or Cd{sub 0.9}Zn{sub 0.1}Te crystals is substantiated and obtained in analytical form. It is shown that the width of the space charge region (SCR) of 6-40 {mu}m at zero bias in CdTe (Cd{sub 0.9}Zn{sub 0.1}Te) Schottky diode is optimal for detecting radiation in the photon energy range above 5-10 keV. Based on the Poisson equation, the relationship between the SCR width and the composition of impurities and the degree of their compensation are investigated. It is shown that the presence of deep levels in the bandgap leads to a considerable increase in space charge density and electric field strength near the crystal surface. However, this effect contributes a small error in the determination of the SCR width using the standard formula for the Schottky diode. It is also shown that the concentration of uncompensated impurities in CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals within the 4 Multiplication-Sign 10{sup 11}-10{sup 13} cm{sup -3} range is optimal for the detection efficiency of X- and {gamma}-rays in the photon high-energy range. The record-high values of energy resolution have been obtained in the spectra of {sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs isotopes measured using CdTe crystals with Schottky diodes because the concentration of uncompensated donors in the CdTe crystals (1-2) Multiplication-Sign 10{sup 12} cm{sup -3} falls on an interval of maximum detection efficiency. In the spectrum of {sup 57}Co isotope, the limiting energy resolution has been achieved.

Kosyachenko, L. A.; Melnychuk, S. V.; Sklyarchuk, V. M.; Maslyanchuk, O. L.; Sklyarchuk, O. V. [Chernivtsi National University, 58012 Chernivtsi (Ukraine); Aoki, T. [Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432-8011 (Japan); Lambropoulos, C. P. [Technological Educational Institute of Chalkida, Psahna, Evia GR 34400 (Greece); Gnatyuk, V. A. [Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Grushko, E. V. [Chernivtsi National University, 58012 Chernivtsi (Ukraine); Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432-8011 (Japan)

2013-02-07T23:59:59.000Z

200

Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride  

SciTech Connect (OSTI)

Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (?1.58?eV) and free-electron to acceptor transitions (?1.547?eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591?eV) and Te vacancies at 1.552?eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

Albin, D. S., E-mail: david.albin@nrel.gov; Kuciauskas, D.; Ma, J.; Metzger, W. K.; Burst, J. M.; Moutinho, H. R.; Dippo, P. C. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2014-03-03T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

TenTen: A New Array of Multi-TeV Imaging Cherenkov Telescopes  

E-Print Network [OSTI]

The exciting results from H.E.S.S. point to a new population of gamma-ray sources at energies E > 10 TeV, paving the way for future studies and new discoveries in the multi-TeV energy range. Connected with these energies is the search for sources of PeV cosmic-rays (CRs) and the study of multi-TeV gamma-ray production in a growing number of astrophysical environments. TenTen is a proposed stereoscopic array (with a suggested site in Australia) of modest-sized (10 to 30m^2) Cherenkov imaging telescopes with a wide field of view (8 to 10deg diameter) optimised for the E~10 to 100 TeV range. TenTen will achieve an effective area of ~10 km^2 at energies above 10 TeV. We outline here the motivation for TenTen and summarise key performance parameters.

Rowell, G; Clay, R; Dawson, B; Denman, J; Protheroe, R; Smith, A G K; Thornton, G; Wild, N

2007-01-01T23:59:59.000Z

202

TenTen: A New Array of Multi-TeV Imaging Cherenkov Telescopes  

E-Print Network [OSTI]

The exciting results from H.E.S.S. point to a new population of gamma-ray sources at energies E > 10 TeV, paving the way for future studies and new discoveries in the multi-TeV energy range. Connected with these energies is the search for sources of PeV cosmic-rays (CRs) and the study of multi-TeV gamma-ray production in a growing number of astrophysical environments. TenTen is a proposed stereoscopic array (with a suggested site in Australia) of modest-sized (10 to 30m^2) Cherenkov imaging telescopes with a wide field of view (8 to 10deg diameter) optimised for the E~10 to 100 TeV range. TenTen will achieve an effective area of ~10 km^2 at energies above 10 TeV. We outline here the motivation for TenTen and summarise key performance parameters.

G. Rowell; V. Stamatescu; R. Clay; B. Dawson; J. Denman; R. Protheroe; A. G. K. Smith; G. Thornton; N. Wild

2007-10-10T23:59:59.000Z

203

Phase formation and phase transformations in Bi-Te films with nanoscale thickness  

SciTech Connect (OSTI)

The processes of phase formation are studied in a binary Bi-Te system using the kinematic electron diffraction technique. It is established that, in the case of both simultaneous and layer-by-layer deposition of bismuth and tellurium and irrespective of the order of their deposition, phases with compositions Bi{sub 2}Te{sub 3} and BiTe are formed at the condensation plane in the amorphous and crystalline state, respectively. The amorphous Bi{sub 2}Te{sub 3} phase is stable at room temperature and crystallizes at a temperature of 423 K. It is shown that ordering of the phase BiTe is not a consequence of atomic order of the structure; rather, it is caused by the real structure of the object (by blocks)

Akhmedov, K. M. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: axmedovqurban@rambler.ru

2008-09-15T23:59:59.000Z

204

Growth of CdTe thin films on graphene by close-spaced sublimation method  

SciTech Connect (OSTI)

CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.45–1.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2013-12-02T23:59:59.000Z

205

Band gap of CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals  

SciTech Connect (OSTI)

The band gap E{sub g} of the CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and {gamma} radiation based on these materials (E{sub g} = 1.39-1.54 and 1.51-1.6 eV for CdTe and Cd{sub 0.9}Zn{sub 0.1}Te, respectively). The used procedure of determination of E{sub g} is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E{sub g} = 1.47-1.48 eV) and Cd{sub 0.9}Zn{sub 0.1}Te (E{sub g} = 1.52-1.53 eV) at room temperature substantially narrow the range of accurate determination of E{sub g}.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpact.net; Sklyarchuk, V. M.; Sklyarchuk, O. V.; Maslyanchuk, O. L. [Chernovtsy National University (Ukraine)

2011-10-15T23:59:59.000Z

206

Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties (Presentation)  

SciTech Connect (OSTI)

The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.

Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

2008-05-01T23:59:59.000Z

207

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

208

CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280  

SciTech Connect (OSTI)

The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.

Albin, D.

2011-05-01T23:59:59.000Z

209

PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER  

E-Print Network [OSTI]

267 PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER Laboratoire Einstein, 69621 Villeurbanne Cedex, France Résumé. 2014 Les défauts électriquement inactifs dans CdTe ont of electrically inactive defects has been performed on CdTe single crystals by two different experimental

Boyer, Edmond

210

Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films grown on Si substrate  

E-Print Network [OSTI]

Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films and contactless electroreflectance CER spectra of CdTe films grown on Si substrate, at energies below the band gap of CdTe. The simultaneous observation of OF in the reflectance (R) spectrum having the same period

Ghosh, Sandip

211

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot  

E-Print Network [OSTI]

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot C. L dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent of single Mn-doped CdTe dots, information about the quantum spin state of a single Mn atom is extracted from

Paris-Sud XI, Université de

212

Quantifying electron-phonon coupling in CdTe12xSex nanocrystals via coherent phonon manipulation  

E-Print Network [OSTI]

Quantifying electron-phonon coupling in CdTe12xSex nanocrystals via coherent phonon manipulation B to manipulate coherent phonon excitation and quantify the strength of electron-phonon coupling in CdTe1Ã?xSex nanocrystals (NCs). Raman active CdSe and CdTe longitudinal optical phonon (LO) modes are excited and probed

Xu, Xianfan

213

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites  

E-Print Network [OSTI]

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites circuit model is used to analyze the impact of shunts on basic performance parameters of a CdTe thin with each other in their effect on the module. To address these questions, a 2-D circuit model of a CdTe

Sites, James R.

214

CdTe EPITAXIAL FILMS AND THEIR PROPERTIES S. N. MAXIMOVSKY, I. P. REVOCATOVA, V. M. SALMAN,  

E-Print Network [OSTI]

161 CdTe EPITAXIAL FILMS AND THEIR PROPERTIES S. N. MAXIMOVSKY, I. P. REVOCATOVA, V. M. SALMAN, M CdTe films of p and n type conductivity with a given devia- tion of film composition from PHYSIQUE APPLIQUÃ?E TOME 12, FÃ?VRIER 1977, PAGE 161 The design of reliable CdTe nuclear radiation counters

Paris-Sud XI, Université de

215

A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CdTe FOR X-RAY SPECTROMETRY  

E-Print Network [OSTI]

339 A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CdTe FOR X-RAY SPECTROMETRY P. EICHINGER for semiconductor radiation detectors is discussed. A versatile head consisting of a 2 mm thick, 10 mm diameter CdTe and its applica- tion to CdTe and CdS has already been published [2, 3], but because of the many

Paris-Sud XI, Université de

216

Substrate effect on CdTe layers grown by metalorganic vapor phase N. V. Sochinskiia),b)  

E-Print Network [OSTI]

Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy N. V. Sochinskiia for publication 30 December 1996 CdTe layers were grown by metalorganic vapor phase epitaxy MOVPE on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C

Viña, Luis

217

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine,1  

E-Print Network [OSTI]

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine Laboratory, Golden, CO 80401 ABSTRACT Polycrystalline thin-film CdTe is one of the leading materials used various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL

Sites, James R.

218

CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM  

E-Print Network [OSTI]

189 CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM T, PAGE 189 1. Introduction. - Recent results of studies on carrier transport in high-purity CdTe crystals current measure- ments. This paper discusses trapping and detrapping effects in high-resistivity CdTe

Paris-Sud XI, Université de

219

Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths Jason F. Hiltner1  

E-Print Network [OSTI]

Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths Jason F. Hiltner1 variations in the quantum efficiency near the CdTe band gap, which track intermixing of Cd wavelengths with energies near and slightly below the CdTe band gap (1.5 eV) to be used. Temperature tuning

Sites, James R.

220

Paul Sellin, Centre for Nuclear and Radiation Physics Charge transport and mobility mapping in CdTe  

E-Print Network [OSTI]

Paul Sellin, Centre for Nuclear and Radiation Physics Charge transport and mobility mapping in CdTe, JAP 92 (2002) 3198-3206 Introduction Motivation for this Work: r THM-grown CdTe supplied by Eurorad signal response? r Pulse shape analysis can identify regions of trapping or reduced mobility r Does CdTe

Sellin, Paul

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy  

SciTech Connect (OSTI)

The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [?211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

Nakasu, T., E-mail: n-taizo.nakasu@asagi.waseda.jp; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F. [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, M. [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials and Technology, Waseda University, Tokyo 169-0051 (Japan)

2014-10-28T23:59:59.000Z

222

ATLAS SUSY search prospects at 10 TeV  

E-Print Network [OSTI]

The search for physics beyond the Standard Model (BSM) is one of the most important goals for the general purpose detector ATLAS at the Large Hadron Collider at CERN. Already with early LHC data, the ATLAS experiment should be sensitive to discover physics beyond the Standard Model. This paper summarizes the prospects of the ATLAS experiment to find experimental evidence for Supersymmetry (SUSY) and Universal Extra Dimensions (UED) in channels with jets, leptons and missing transverse energy for an integrated luminosity of L = 200pb-1 at a centre-of-mass energy sqrt s = 10 TeV. Only a selection of the results is presented focussing on the the discovery reach for inclusive searches.

Janet Dietrich

2009-10-29T23:59:59.000Z

223

Plasma graviton production in TeV-scale gravity  

E-Print Network [OSTI]

We develop the theory of interaction of classical plasma with Kaluza-Klein (KK) gravitons in the ADD model of TeV-scale gravity. Plasma is described within the kinetic approach as the system of charged particles and Maxwell field both confined on the brane. Interaction with multidimensional gravity living in the bulk with $n$ compact extra dimensions is introduced within the linearized theory. The KK gravitons emission rates are computed taking into account plasma collective effects through the two-point correlation functions of the fluctuations of the plasma energy-momentum tensor. Apart from known mechanisms (such as bremsstrahlung and gravi-Primakoff effect) we find essentially collective channels such as the coalescence of plasma waves into gravitons which may be manifest in turbulent plasmas. Our results indicate that commonly used rates of the KK gravitons production in stars and supernovae may be underestimated.

E. Yu. Melkumova

2010-12-14T23:59:59.000Z

224

Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films  

SciTech Connect (OSTI)

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

2014-01-28T23:59:59.000Z

225

Simulation of relaxation times and energy spectra of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well for variable valence band offset, well width, and composition x  

SciTech Connect (OSTI)

The dependences of relaxation times and energy spectrum of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well (QW) on its parameters were simulated in the cadmium molar fraction range 0 < x < 0.16. It was found that the x increase from 0 to 0.16 changes electron wave function localization in the QW. A criterion for determining the number of interface levels of localized electrons depending on QW parameters was obtained. The effect of a sharp (by two orders of magnitude) increase in the relaxation time of localized electrons was detected at small QW widths and x close to 0.16.

Melezhik, E. O., E-mail: emelezhik@gmail.com; Gumenjuk-Sichevska, J. V.; Sizov, F. F. [National Academy of Sciences, Lashkariev Institute of Semiconductor Physics (Ukraine)

2010-10-15T23:59:59.000Z

226

Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint  

SciTech Connect (OSTI)

Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

2012-08-01T23:59:59.000Z

227

XPS and AES Studies of Cu/CdTe(111)-B  

SciTech Connect (OSTI)

Copper is frequently used as a p-type dopant to improve the performance of back contacts in CdTe thin-film solar cells. In this study, surface-analysis techniques are used to probe fundamental interactions between Cu and the CdTe(111)-B surface. The results presented here were facilitated by the newly constructed surface-analysis cluster tool in the Measurements and Characterization Division at NREL; they reveal a host of fundamental phenomena that occur in the Cu/CdTe system.

Teeter, G.; Gessert, T. A.; Asher, S. E.

2005-01-01T23:59:59.000Z

228

Effect of low energy ion irradiation on CdTe crystals: Luminescence enhancement  

SciTech Connect (OSTI)

In this work we show that low energy ion sputtering is a very efficient technique as a cleaning process for CdTe substrates. We demonstrate, by using several techniques like grazing-angle x-ray diffraction, cathodoluminescence, microluminescence, and micro-Raman spectroscopy that the luminescent properties of CdTe substrates can be very much increased when CdTe surfaces are irradiated with low energy Argon ions. We postulate that this enhancement is mainly due to the removal of surface damage induced by the cutting and polishing processes. The formation of a low density of nonluminescent aggregates after the sputtering process has also been observed.

Olvera, J.; Plaza, J. L.; Dios, S. de; Dieguez, E. [Departamento de Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O.; Avella, M. [Departamento Fisica Materia Condensada, GdS-Optronlab Group, Universidad de Valladolid, Edificio I-D, Paseo de Belen 1, 47011 Valladolid (Spain)

2010-12-15T23:59:59.000Z

229

Search for a TeV Component of GRBs using the Milagrito Detector  

E-Print Network [OSTI]

Observing gamma ray bursts (GRBs) in the TeV energy range can be extremely valuable in providing insight to GRB radiation mechanisms and in constraining source distances. The Milagrito detector was an air shower array which used the water Cherenkov technique to search for TeV sources. Data from this detector was analyzed to look for a TeV component of GRBs coincident with low energy -rays detected by the BATSE instrument on the Compton Gamma Ray Observatory. A sample of 54 BATSE GRBs which were in the field of view of the Milagrito detector during its lifetime (February 1997 to May 1998) was used.

Atkins, R; Berley, D; Chen, M L; Coyne, D G; Delay, R S; Dingus, B L; Dorfan, D E; Ellsworth, R W; Evans, D; Falcone, A D; Fleysher, L; Fleysher, R; Gisler, G; Goodman, J A; Haines, T J; Hoffman, C M; Hugenberger, S; Kelley, L A; Leonor, I; Macri, J R; McConnell, M; McCullough, J F; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Ryan, J M; Schneider, M; Shen, B; Shoup, A L; Sinnis, G; Smith, A J; Sullivan, G W; Thompson, T N; Tümer, T O; Wang, K; Wascko, M O; Westerhoff, S; Williams, D A; Yang, T; Yodh, G B

1999-01-01T23:59:59.000Z

230

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

SciTech Connect (OSTI)

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

231

Superconductivity in textured Bi clusters/Bi{sub 2}Te{sub 3} films  

SciTech Connect (OSTI)

We report superconductivity at an onset critical temperature below 3.1 K in topological insulator ?200-nm-thick Bi{sub 2}Te{sub 3} thin films grown by pulsed laser deposition. Using energy-dispersive X-ray spectroscopy elemental mapping and Auger electron spectroscopy elemental depth profiling, we clearly identified bismuth (Bi) precipitation and Bi cluster signatures. Superconductivity in the Bi{sub 2}Te{sub 3} films was attributed to the proximity effect of Bi clusters precipitated on the surface of the Bi{sub 2}Te{sub 3} films.

Le, Phuoc Huu [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30049, Taiwan (China); Faculty of Basic Sciences, Can Tho University of Medicine and Pharmacy, 179 Nguyen Van Cu Street, Can Tho (Viet Nam); Tzeng, Wen-Yen; Chen, Hsueh-Ju; Luo, Chih Wei, E-mail: cwluo@mail.nctu.edu.tw [Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Lin, Jiunn-Yuan [Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Leu, Jihperng, E-mail: jimleu@mail.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30049, Taiwan (China)

2014-09-01T23:59:59.000Z

232

Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies  

SciTech Connect (OSTI)

Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

1993-08-01T23:59:59.000Z

233

Development of Bi-Sb-Te ternary alloy with compositionally graded structure  

SciTech Connect (OSTI)

Compositionally graded p-type Bi-Sb-Te thermoelectric material was synthesized by PIES (Pulverized and Intermixed Elements Sintering) method. The materials consisted of three segmented regions of different alloy composition, i.e., y = 0.8/0.825/0.9 in (Bi{sub 2}Te{sub 3}){sub 1{minus}y} (Sb{sub 2}Te{sub 3}){sub y} system. It was found that the electrical power output of the compositionally graded material was larger than that of the best single composition material when the temperature difference was the designed value.

Yamamoto, A.; Ohta, T.

1997-07-01T23:59:59.000Z

234

Search for Neutral Heavy Leptons in the NuTeV Experiment at Fermilab  

E-Print Network [OSTI]

Preliminary results from a search for neutral heavy leptons in the NuTeV experiment at Fermilab. The upgraded NuTeV neutrino detector for the 1996-1997 run included an instrumented decay region for the NHL search which, combined with the NuTeV calorimeter, allows detection in several decay modes (mu-mu-nu, mu-e-nu, mu-pi, e-pi, and e-e-nu). We see no evidence for neutral heavy leptons in our current search in the mass range from 0.3 GeV to 2.0 GeV decaying into final states containing a muon.

NuTeV Collaboration; R. B. Drucker

1998-11-23T23:59:59.000Z

235

Search for a TeV Component of GRBs using the Milagrito Detector  

E-Print Network [OSTI]

Observing gamma ray bursts (GRBs) in the TeV energy range can be extremely valuable in providing insight to GRB radiation mechanisms and in constraining source distances. The Milagrito detector was an air shower array which used the water Cherenkov technique to search for TeV sources. Data from this detector was analyzed to look for a TeV component of GRBs coincident with low energy -rays detected by the BATSE instrument on the Compton Gamma Ray Observatory. A sample of 54 BATSE GRBs which were in the field of view of the Milagrito detector during its lifetime (February 1997 to May 1998) was used.

R. Atkins; W. Benbow; D. Berley; M. -L. Chen; D. G. Coyne; R. S. Delay; B. L. Dingus; D. E. Dorfan; R. W. Ellsworth; D. Evans; A. Falcone; L. Fleysher; R. Fleysher; G. Gisler; J. A. Goodman; T. J. Haines; C. M. Hoffman; S. Hugenberger; L. A. Kelley; I. Leonor; J. Macri; M. McConnell; J. F. McCullough; J. E. McEnery; R. S. Miller; A. I. Mincer; M. F. Morales; P. Nemethy; J. M. Ryan; M. Schneider; B. Shen; A. Shoup; G. Sinnis; A. J. Smith; G. W. Sullivan; T. N. Thompson; O. T. Tumer; K. Wang; M. O. Wascko; S. Westerhoff; D. A. Williams; T. Yang; G. B. Yodh

1999-06-24T23:59:59.000Z

236

Multi-channel Absorption of Photons at Energies above 1 TeV  

E-Print Network [OSTI]

It is shown that the absorption of photons at energies > 1 TeV (much higher than the mass of the Higgs boson ~ 100 GeV) is a multi-channel one as opposed to the purely electron pair like absorption at lower energies. The observation on muons and gamma rays from Cygnus X-3 point source at these energies (1 TeV to 10 TeV) is quantitatively accounted for. The expected multi-channel cross-sections of photons in air as a function of energy is given both for Coulomb dissociation and nuclear absorption upto limiting energies of 10^9 GeV.

A. Subramanian

2006-07-24T23:59:59.000Z

237

Phase relationships in the pseudo-binary 2(ZnTe)-CuInTe{sub 2} system  

SciTech Connect (OSTI)

Subsolidus phase relationships in the 2(ZnTe){sub x}(CuInTe{sub 2}){sub 1-x} system were investigated by TEM experiments combined with EDX analysis. The samples were prepared by the solid-state reaction of the elements during long annealing times, followed by either quenching in ice-cold water, or by controlled cooling at different rates. Using the chemical compositions of single and coexisting phases at various temperatures, the boundaries of the two-phase region have been determined. At room temperature, the two-phase region extends from x=0.10 to 0.31. For x<0.10 only mixed crystals with tetragonal structure exist. Between x=0.31 and 1 alloys with the cubic structure are stable. The morphology of the tetragonal domains and their orientation relationship to the cubic matrix were determined by SAD, TEM and HRTEM experiments. The tetragonal phase embedded within the cubic matrix has a flat ellipsoidal shape, whose short axis coincides with the tetragonal c-axis. The three topotaxial orientation relationships between the tetragonal domains and the surrounding cubic matrix were found to be: [001]{sub tetr.}-bar [100]{sub cub.}, [001]{sub tetr.}-bar [010]{sub cub.} and [001]{sub tetr.}-bar [001]{sub cub.}. There is an indication that the nucleation starts from small regions displaying cation ordering according to the CuPt-type structure. Reaching the two-phase equilibrium, the tetragonal domains as well as the surrounding cubic phase are free of this cation ordering.

Roussak, Liudmila [University of Leipzig, Faculty of Chemistry and Mineralogy, Institute of Mineralogy, Crystallography and Materials Science, Linnestrasse 3-5 (TA), D-04103 Leipzig (Germany)]. E-mail: roussak@rz.uni-leipzig.de; Wagner, Gerald [University of Leipzig, Faculty of Chemistry and Mineralogy, Institute of Mineralogy, Crystallography and Materials Science, Linnestrasse 3-5 (TA), D-04103 Leipzig (Germany); Schorr, Susan [University of Leipzig, Faculty of Chemistry and Mineralogy, Institute of Mineralogy, Crystallography and Materials Science, Linnestrasse 3-5 (TA), D-04103 Leipzig (Germany); Bente, Klaus [University of Leipzig, Faculty of Chemistry and Mineralogy, Institute of Mineralogy, Crystallography and Materials Science, Linnestrasse 3-5 (TA), D-04103 Leipzig (Germany)

2005-11-15T23:59:59.000Z

238

Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films  

SciTech Connect (OSTI)

We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

Liu, Xiaofei; Guo, Wanlin, E-mail: wlguo@nuaa.edu.cn [State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE), Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2014-08-25T23:59:59.000Z

239

Data Release for NuTeV nu_e Disappearance Analysis  

E-Print Network [OSTI]

Data Release for the NuTeV electron flavor disappearance study. See this document for instructions on incorporating the NuteV nu_e disappearance data into oscillation global fits.

Conrad, J.M.

2012-07-23T23:59:59.000Z

240

UNIVERSITY OF CALIFORNIA, TeV Energy Spectra of the Crab Nebula, Mrk 421 and  

E-Print Network [OSTI]

UNIVERSITY OF CALIFORNIA, IRVINE TeV Energy Spectra of the Crab Nebula, Mrk 421 and the Cygnus . . . . . . . . . . . . . . . . . . . . 2 i Cosmic Rays . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ii The Search for the Origin with Milagro . . . . . . . . . . . . . . . . . . . . . 69 IVThe Milagro Energy Reconstruction Algorithm 73 I

California at Santa Cruz, University of

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Collimation and Radiative Deceleration of Jets in TeV AGNs  

E-Print Network [OSTI]

We consider some implications of the rapid X-ray and TeV variability observed in M87 and the TeV blazars. We outline a model for jet focusing and demonstrate that modest radiative cooling can lead to recollimation of a relativistic jet in a nozzle having a very small cross-sectional radius. Such a configuration can produce rapid variability at large distances from the central engine and may explain recent observations of the HST-1 knot in M87. Possible applications of this model to TeV blazars are discussed. We also discuss a scenario for the very rapid TeV flares observed with HESS and MAGIC in some blazars, that accommodates the relatively small Doppler factors inferred from radio observations.

Amir Levinson; Omer Bromberg

2007-12-17T23:59:59.000Z

242

p-CdTe/n-CdS photovoltaic cells in the substrate configuration.  

E-Print Network [OSTI]

??In this thesis, p-CdTe/n-CdS solar cells in the substrate configuration have been studied. The focus is on device fabrication, performance optimization, and the development of… (more)

Wu, Hsiang Ning (1984 - )

2014-01-01T23:59:59.000Z

243

Development of high efficieny CdTe thin-film solar cell.  

E-Print Network [OSTI]

??CdTe films were deposited by sputtering technique and were then carried out by CdCl2 treatment. The SEM micrographs show that the grain sizes of the… (more)

Huang, Yein-rein

2011-01-01T23:59:59.000Z

244

Stability Issues in Sputtered CdS/CdTe Solar Cells.  

E-Print Network [OSTI]

?? Magnetron sputtering is a well-established thin-film deposition technique which is particularly well-suited for sub-micron layers. We use this method to deposit ultra-thin CdS/CdTe layers… (more)

Paudel, Naba Raj

2011-01-01T23:59:59.000Z

245

Molybdenum Nitride Films in the Back Contact Structure of Flexible Substrate CdTe Solar Cells.  

E-Print Network [OSTI]

??CdTe solar cells in the superstrate configuration have achieved record efficiencies of 16% but those in the substrate configuration have reached efficiencies of only 7.8%.… (more)

Guntur, Vasudha

2011-01-01T23:59:59.000Z

246

Studies of sputtered CdTe and CdSe solar cells.  

E-Print Network [OSTI]

??CdTe has recently become the most commercially successful polycrystalline thin filmsolar module material. Its low cost, large-area solar module is reshaping the silicondominatedsolar panel market;… (more)

Kwon, Dohyoung

2012-01-01T23:59:59.000Z

247

Atomic-force microscopy and photoluminescence of nanostructured CdTe  

SciTech Connect (OSTI)

Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

Babentsov, V.; Sizov, F. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)] [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Franc, J. [Charles University, Institute of Physics, Faculty of Mathematics and Physics (Czech Republic)] [Charles University, Institute of Physics, Faculty of Mathematics and Physics (Czech Republic); Luchenko, A.; Svezhentsova, E., E-mail: svezhentsova@ukr.net; Tsybrii, Z. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)] [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2013-09-15T23:59:59.000Z

248

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network [OSTI]

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

249

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

250

Photoluminescence and Extended X-ray Absorption Fine Structure Studies on CdTe Material.  

E-Print Network [OSTI]

??The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of… (more)

Liu, Xiangxin

2006-01-01T23:59:59.000Z

251

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network [OSTI]

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

252

Approaches to fabricating high-efficiency ultra-thin CdTe solar cells.  

E-Print Network [OSTI]

??This thesis is an investigation of the fabrication, characterization and performance of high-efficiency and ultra-thin CdTe solar cells with an aim of reducing the material… (more)

Xia, Wei (1981 - )

2013-01-01T23:59:59.000Z

253

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films  

SciTech Connect (OSTI)

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

2014-04-24T23:59:59.000Z

254

Shunt Passivation Process for CdTe Solar Cell - New Post Deposition Technique.  

E-Print Network [OSTI]

?? A cadmium sulfide / cadmium telluride (CdS/CdTe) solar cell consists of thedevice stack: Glass substrate / SnO2:F (TCO, transparent conductive oxide) / CdS (n-type… (more)

Tessema, Misle Mesfin

2009-01-01T23:59:59.000Z

255

Effect of Cu doping on Hole Mobility in CdTe  

SciTech Connect (OSTI)

High quality CdTe thin films grown by laser deposition technique and heavily doped with Cu have recently been reported to have resistivity and hole mobility comparable to those of bulk single crystals. To explain the experimental results we have calculated the effect of Cu on the band structure and phonon spectrum of CdTe using the density functional theory (DFT) and the linearized augmented plane wave (LAPW) method. We found that the introduction of a high density of Cu can lead to a reduction in the hole-LO phonon scattering. In addition, Cu doping can remove Cd vacancies in CdTe and thereby enhance the hole mobility in CdTe.

Ma Zhixun; Mao, Samuel S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Liu Lei; Yu, Peter Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California at Berkeley, Berkeley, CA 94720 (United States)

2010-01-04T23:59:59.000Z

256

Atomistic simulation of CdTe solid-liquid coexistence equilibria...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

coexistence equilibria. Abstract: Atomistic simulations of CdTe using a Stillinger-Weber (S-W) interatomic potential were undertaken to model the solid-liquid phase equilibria...

257

Hadronic Production of TeV Gamma Ray Flares from Blazars  

E-Print Network [OSTI]

We propose that TeV $\\gamma$-ray emission from blazars is produced by collisions near the line of sight of high energy jet protons with gas targets (``clouds'') from the broad emission-line region (BLR). Intense TeV $\\gamma$-ray flares (GRFs) are produced when BLR clouds cross the line of sight close to the black hole. The model reproduces the observed properties of the recently reported very short and intense TeV GRFs from the blazar Markarian 421. Hadronic production of TeV GRF from blazars implies that it is accompanied by a simultaneous emission of high energy neutrinos, and of electrons and positrons with similar intensities, light curves and energy spectra. Cooling of these electrons and positrons by emission of synchrotron radiation and inverse Compton scattering produces delayed optical, X-ray and $\\gamma$-ray flares.

Arnon Dar; Ari Laor

1997-01-13T23:59:59.000Z

258

Elastic properties of sulphur and selenium doped ternary PbTe alloys by first principles  

SciTech Connect (OSTI)

Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbS{sub x}Te{sub (1?x)} and PbSe{sub x}Te{sub (1?x)} (0?x?1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.

Bali, Ashoka, E-mail: rcmallik@physics.iisc.ernet.in; Chetty, Raju, E-mail: rcmallik@physics.iisc.ernet.in; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore-560012 (India)

2014-04-24T23:59:59.000Z

259

Z' Bosons, the NuTeV Anomaly, and the Higgs Boson Mass  

E-Print Network [OSTI]

NuTeV Anomaly, and the Higgs Boson Mass Michael S. Chanowitzpredicted value of the Higgs boson mass, from ? 60 to ? 120from an increase in the Higgs boson mass. There is a vast

Chanowitz, Michael S

2009-01-01T23:59:59.000Z

260

First results on neutrinoless double beta decay of Te-130 with the calorimetric cuoricino experiment  

E-Print Network [OSTI]

Evidence for Neutrinoless Double Beta Decay” arXiv:hep-on “Evidence for neutrinoless double beta decay”- arXiv:hep-Results on Neutrinoless Double Beta Decay of 130 Te with the

2003-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Isospin dependence of EMC effect explains NuTeV anomaly  

SciTech Connect (OSTI)

A neutron or proton excess in nuclei leads to an isovector-vector mean-field which, through its coupling to the quarks in a bound nucleon, implies a shift in the quark distributions with respect to the Bjorken scaling variable. We show that this result leads to an additional correction to the NuTeV measurement of sin^2Theta_W. The sign of this correction is largely model independent and acts to reduce the NuTeV result. Explicit calculation within a covariant and confining Nambu Jona-Lasinio model predicts that this vector field correction accounts for approximately two-thirds of the NuTeV anomaly. We are therefore led to offer a new interpretation of the NuTeV measurement, namely, that it is further evidence for the medium modification of the bound nucleon wavefunction.

Cloet, Ian; Bentz, Wolfgang; Thomas, Anthony

2009-01-01T23:59:59.000Z

262

CATHODOLUMINESCENCE STUDIES OF THE 1.4 eV BANDS IN CdTe (*) C. B. NORRIS and C. E. BARNES  

E-Print Network [OSTI]

219 CATHODOLUMINESCENCE STUDIES OF THE 1.4 eV BANDS IN CdTe (*) C. B. NORRIS and C. E. BARNESV luminescence bands in nominally undoped, nominally stoichiometric CdTe and in donor-compensated, Te-rich CdTe.4 eV transitions in CdTe arose from the fact that this transition is of a more complex nature than

Paris-Sud XI, Université de

263

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1  

E-Print Network [OSTI]

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1 A spin in a CdTe QD, like the strain- induced magnetic anisotropy or hyperfine coupling to the nuclei in this study is grown on a ZnTe substrate and contains CdTe QDs. A 6.5 monolayer thick CdTe layer is deposited

Boyer, Edmond

264

Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds  

SciTech Connect (OSTI)

CuIn{sub 1?x}Cd{sub x}Te{sub 2} materials (x?=?0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600?K.

Cheng, N. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049 (China); Liu, R. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Bai, S. [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Shi, X., E-mail: xshi@mail.sic.ac.cn; Chen, L. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

2014-04-28T23:59:59.000Z

265

DISCOVERY OF A NEW TeV GAMMA-RAY SOURCE: VER J0521+211  

SciTech Connect (OSTI)

We report the detection of a new TeV gamma-ray source, VER J0521+211, based on observations made with the VERITAS imaging atmospheric Cherenkov Telescope Array. These observations were motivated by the discovery of a cluster of >30 GeV photons in the first year of Fermi Large Area Telescope observations. VER J0521+211 is relatively bright at TeV energies, with a mean photon flux of (1.93 ± 0.13{sub stat} ± 0.78{sub sys}) × 10{sup –11} cm{sup –2} s{sup –1} above 0.2 TeV during the period of the VERITAS observations. The source is strongly variable on a daily timescale across all wavebands, from optical to TeV, with a peak flux corresponding to ?0.3 times the steady Crab Nebula flux at TeV energies. Follow-up observations in the optical and X-ray bands classify the newly discovered TeV source as a BL Lac-type blazar with uncertain redshift, although recent measurements suggest z = 0.108. VER J0521+211 exhibits all the defining properties of blazars in radio, optical, X-ray, and gamma-ray wavelengths.

Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Arlen, T.; Aune, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Behera, B.; Federici, S. [DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Beilicke, M.; Buckley, J. H.; Bugaev, V. [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Bird, R. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Byrum, K. [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Cui, W.; Feng, Q.; Finley, J. P. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Falcone, A., E-mail: fortin@veritas.sao.arizona.edu, E-mail: errando@astro.columbia.edu, E-mail: jholder@physics.udel.edu, E-mail: sfegan@llr.in2p3.fr [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Collaboration: VERITAS Collaboration; and others

2013-10-20T23:59:59.000Z

266

Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint  

SciTech Connect (OSTI)

Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

2012-06-01T23:59:59.000Z

267

Ion-beam treatment to prepare surfaces of p-CdTe films  

DOE Patents [OSTI]

A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

Gessert, Timothy A. (Conifer, CO)

2001-01-01T23:59:59.000Z

268

Synthesis, mechanism, optical and electrical characterization of PbTe micro-needles  

SciTech Connect (OSTI)

Highlights: ? PbTe nanoneedles were prepared at low temperature without any surfactant or template. ? The synthetic method is very simple, economical and environment benign. ? PbTe nanoneedles exhibit low resistivity, which improves thermoelectric performance. ? PbTe nanoneedles show large blue-shift due to quantum confinement effect. - Abstract: The face-centered cubic PbTe micro-needles were synthesized by a simple aqueous chemical reaction between lead acetate and tellurium in NaOH solution in the presence of Na{sub 2}HPO{sub 4} as reducing reagent at low temperature under atmospheric pressure without any additional surfactants or templates. Micro structural analyses show that these micro-needles are in the range of 90–130 nm in diameter with length ?2 ?m. Electrical resistivity of prepared PbTe micro-needles was found to be 14–33 Ohm-cm. The optical absorption spectrum of PbTe micro-needles shows large blue-shift (?1.26 eV) with respect to those of the bulk counterpart (0.32 eV) due to quantum confinement of charge carriers, which is consistent with the blue shift of the band emission peak in the photoluminescence spectrum.

Kungumadevi, L. [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore 641 029, Tamilnadu (India); Sathyamoorthy, R., E-mail: rsathya1959@gmail.com [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore 641 029, Tamilnadu (India)

2013-05-15T23:59:59.000Z

269

TeV AND MULTI-WAVELENGTH OBSERVATIONS OF Mrk 421 IN 2006-2008  

SciTech Connect (OSTI)

We report on TeV {gamma}-ray observations of the blazar Mrk 421 (redshift of 0.031) with the VERITAS observatory and the Whipple 10 m Cherenkov telescope. The excellent sensitivity of VERITAS allowed us to sample the TeV {gamma}-ray fluxes and energy spectra with unprecedented accuracy where Mrk 421 was detected in each of the pointings. A total of 47.3 hr of VERITAS and 96 hr of Whipple 10 m data were acquired between 2006 January and 2008 June. We present the results of a study of the TeV {gamma}-ray energy spectra as a function of time and for different flux levels. On 2008 May 2 and 3, bright TeV {gamma}-ray flares were detected with fluxes reaching the level of 10 Crab. The TeV {gamma}-ray data were complemented with radio, optical, and X-ray observations, with flux variability found in all bands except for the radio wave band. The combination of the Rossi X-ray Timing Explorer and Swift X-ray data reveal spectral hardening with increasing flux levels, often correlated with an increase of the source activity in TeV {gamma}-rays. Contemporaneous spectral energy distributions were generated for 18 nights, each of which are reasonably described by a one-zone synchrotron self-Compton model.

Acciari, V. A.; Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Aliu, E. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Arlen, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Aune, T. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R. [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Boltuch, D. [Department of Physics and Astronomy and Bartol Research Institute, University of Delaware, Newark, DE 19716 (United States); Bradbury, S. M. [School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT (United Kingdom); Byrum, K. [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Cannon, A. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Cesarini, A. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Cui, W.; Finley, J. P. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Duke, C. [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States); Falcone, A. [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Finnegan, G., E-mail: beilicke@physics.wustl.edu [Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112 (United States)

2011-09-01T23:59:59.000Z

270

Multichannel CdZnTe Gamma Ray Spectrometer  

SciTech Connect (OSTI)

A 3 cm{sup 3} multichannel gamma spectrometer for DOE applications is under development by Digirad Corporation. The device is based on a position sensitive detector packaged in a compact multi-chip module (MCM) with integrated readout circuitry. The modular, multichannel design will enable identification and quantitative analysis of radionuclides in extended sources, or sources containing low levels of activity. The MCM approach has the advantages that the modules are designed for imaging applications, and the sensitivity can be arbitrarily increased by increasing the number of pixels, i.e. adding modules to the instrument. For a high sensitivity probe, the outputs for each pixel can be corrected for gain and offset variations, and summed digitally. Single pixel results obtained with discrete low noise readout indicate energy resolution of 3 keV can be approached with currently available CdZnTe. The energy resolution demonstrated to date with MCMs for 511 keV gamma rays is 10 keV.

F. P. Doty; C. L. Lingren; B. A. Apotovsky; J. Brunsch; J. F. Butler; T. Collins; R. L. Conwell; S. Friesenhahn; J. Gormley; B. Pi; S. Zhao (Digirad Corp., San Diego, CA); F. L. Augustine, Augustine Engineering, Encinitas, CA; B. A. Bennet; E. Cross; R. B. James (Sandia Nat'l. Labs.)

1998-07-22T23:59:59.000Z

271

Propagation of Gravitational Waves in Generalized TeVeS  

E-Print Network [OSTI]

Efforts are underway to improve the design and sensitivity of gravitational waves detectors, with the hope that the next generation of these detectors will observe a gravitational wave signal. Such a signal will not only provide information on dynamics in the strong gravity regime that characterizes potential sources of gravitational waves, but will also serve as a decisive test for alternative theories of gravitation that are consistent with all other current experimental observations. We study the linearized theory of the tensor-vector-scalar theory of gravity (TeVeS) with generalized vector action, an alternative theory of gravitation designed to explain the apparent deficit of visible matter in galaxies and clusters of galaxies without postulating yet undetected dark matter. We find the polarization states and propagation speeds for gravitational waves in vacuum, and show that in addition to the usual transverse-traceless propagation modes, there are two more transverse modes and two trace modes. Additionally, the propagation speeds are different from c.

Eva Sagi

2010-01-11T23:59:59.000Z

272

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction  

E-Print Network [OSTI]

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Zhaoquan Zeng; Timothy A. Morgan; Dongsheng Fan; Chen Li; Yusuke Hirono; Xian Hu; Yanfei Zhao; Joon Sue Lee; Zhiming M. Wang; Jian Wang; Shuiqing Yu; Michael E. Hawkridge; Mourad Benamara; Gregory J. Salamo

2013-03-11T23:59:59.000Z

273

Electronic and thermoelectric properties of Ce{sub 3}Te{sub 4} and La{sub 3}Te{sub 4} computed with density functional theory with on-site Coulomb interaction correction  

SciTech Connect (OSTI)

The electronic properties and Seebeck coefficients of Ce{sub 3}Te{sub 4} and La{sub 3}Te{sub 4} are computed using Density Functional Theory with on-site Coulomb interaction correction. We found that the Seebeck coefficients of Ce{sub 3}Te{sub 4} and La{sub 3}Te{sub 4} are almost equal at temperatures larger than the Curie temperature of Ce{sub 3}Te{sub 4}, and in good agreement with the measurements reported by May et al. [Phys. Rev. B 86, 035135 (2012)]. At temperatures below the Curie temperature, the Seebeck coefficient of Ce{sub 3}Te{sub 4} increases due to the ferromagnetic ordering, which leads the f-electron of Ce to contribute to the Seebeck coefficient in the relevant range of electron concentration.

Vo, Trinh; Allmen, Paul von; Huang, Chen-Kuo; Ma, James; Bux, Sabah; Fleurial, Jean-Pierre [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (United States)

2014-10-07T23:59:59.000Z

274

Local Charge Neutrality Condition, Fermi Level, and Carrier Compensation of CdTe Polycrystalline Thin Film in CdS/CdTe Solar Cells  

E-Print Network [OSTI]

Te Solar Energy Research Center, NJIT, Newark, NJ 07102 2 National Renewable Energy Laboratory, Golden, CO in the band gap of semiconductors according to the charging and transition energy levels of the state being single or multiple, and according to the atomic configuration and formation of energy of the state being

275

Note on XMM-Newton observations of the first unidentified TeV gamma-ray source TeV J2032+4130 by Horns et al. astro-ph/0705.0009  

E-Print Network [OSTI]

I comment on the -- apparent -- diffuse X-ray emission reported by Horns et al. in their XMM observations of TeV J2032+4130

Yousaf Butt

2007-05-02T23:59:59.000Z

276

X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELLING SOLVENT GROWN p-TYPE CdTe  

E-Print Network [OSTI]

293 X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELLING SOLVENT GROWN p-TYPE CdTe H On a étudié la variation de l'intensité du pic d'échappement d'un compteur CdTe en fonction de la tension de height on the applied diode voltage was measured at diodes made from doubly travelling solvent grown CdTe

Paris-Sud XI, Université de

277

COMPARATIVE STUDY OF CdTe AND GaAs PHOTOREFRACTIVE PERFORMANCES FROM 1m TO 1.55m  

E-Print Network [OSTI]

1 COMPARATIVE STUDY OF CdTe AND GaAs PHOTOREFRACTIVE PERFORMANCES FROM 1µm TO 1.55µm L.A. de CdTe at different wavelengths from 1.06µm to 1.55µm. The sensitivity and performances of different for the extension of the photorefractive effect towards the wavelength region of 1.3-1.5µm. CdTe appears

Paris-Sud XI, Université de

278

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer  

E-Print Network [OSTI]

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer NICHOLAS LICAUSI biaxially textured CdTe films were grown on biaxial CaF2 buffer layers. The CaF2 nanorods were grown by oblique angle vapor deposition and possessed a {111}h121i biaxial texture. The CdTe film was deposited

Wang, Gwo-Ching

279

REVIEW OF CdTe MEDICAL APPLICATIONS Radiation Monitoring Devices, Inc. 44 Hunt St., Watertown, Massachusetts 02172, U. S. A.  

E-Print Network [OSTI]

REVIEW OF CdTe MEDICAL APPLICATIONS G. ENTINE Radiation Monitoring Devices, Inc. 44 Hunt St place de dents synthé- tiques. Par ailleurs, les détecteurs CdTe ont été utilisés pour le diagnostic d développer des photo- conducteurs X à base de CdTe pour les tomo-densitomètres ; toutefois, des progrès

Paris-Sud XI, Université de

280

Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells  

E-Print Network [OSTI]

573 Epitaxial growth of CdTe oriented thin films, infrared characterization and possible décembre 1979, accepté le 12 décembre 1979) Résumé. 2014 Des films minces orientés de CdTe, d de CdTe cubique dont la face (111), polie mécaniquement et décapée chimiquement, est préalablement

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

CONTRIBUTION TO THE DETERMINATION OF DEEP TRAPPING LEVELS IN HIGH RESISTIVITY FILMS OF n-TYPE CdTe  

E-Print Network [OSTI]

-TYPE CdTe C. LHERMITTE, D. CARLES and C. VAUTIER Laboratoire de Physique des couches minces, Faculté des conduction à l'obscurité et de la photoconductivité des couches minces de CdTe de type n nous permet de and the photoconductivity of n-type CdTe films enables us to emphasize the existence of a distribution of traps located

Boyer, Edmond

282

Development of a Total Energy, Environment and Asset Management (TE2AM tm) Curriculum  

SciTech Connect (OSTI)

The University of Wisconsin Department of Engineering Professional Development (EPD) has completed the sponsored project entitled, Development of a Total Energy, Environment and Asset Management (TE2AM™) Curriculum. The project involved the development of a structured professional development program to improve the knowledge, skills, capabilities, and competencies of engineers and operators of commercial buildings. TE2AM™ advances a radically different approach to commercial building design, operation, maintenance, and end-­?of-­?life disposition. By employing asset management principles to the lifecycle of a commercial building, owners and occupants will realize improved building performance, reduced energy consumption and positive environmental impacts. Through our commercialization plan, we intend to offer TE2AM™ courses and certificates to the professional community and continuously improve TE2AM™ course materials. The TE2AM™ project supports the DOE Strategic Theme 1 -­? Energy Security; and will further advance the DOE Strategic Goal 1.4 Energy Productivity. Through participation in the TE2AM™ curriculum, engineers and operators of commercial buildings will be eligible for a professional certificate; denoting the completion of a prescribed series of learning activities. The project involved a comprehensive, rigorous approach to curriculum development, and accomplished the following goals: 1. Identify, analyze and prioritize key learning needs of engineers, architects and technical professionals as operators of commercial buildings. 2. Design and develop TE2AM™ curricula and instructional strategies to meet learning needs of the target learning community. 3. Establish partnerships with the sponsor and key stakeholders to enhance the development and delivery of learning programs. 4. Successfully commercialize and sustain the training and certificate programs for a substantial time following the term of the award. The project team was successful in achieving the goals and deliverables set forth in the original proposal. Though attempts were made to adhere to the original project timeline, the team requested, and was granted a 6-­?month project extension, during which time the project was completed.

None

2012-12-31T23:59:59.000Z

283

DISCOVERY OF TeV GAMMA-RAY EMISSION FROM CTA 1 BY VERITAS  

SciTech Connect (OSTI)

We report the discovery of TeV gamma-ray emission coincident with the shell-type radio supernova remnant (SNR) CTA 1 using the VERITAS gamma-ray observatory. The source, VER J0006+729, was detected as a 6.5 standard deviation excess over background and shows an extended morphology, approximated by a two-dimensional Gaussian of semimajor (semiminor) axis 0. Degree-Sign 30 (0. Degree-Sign 24) and a centroid 5' from the Fermi gamma-ray pulsar PSR J0007+7303 and its X-ray pulsar wind nebula (PWN). The photon spectrum is well described by a power-law dN/dE = N {sub 0}(E/3 TeV){sup -{Gamma}}, with a differential spectral index of {Gamma} = 2.2 {+-} 0.2{sub stat} {+-} 0.3{sub sys}, and normalization N {sub 0} = (9.1 {+-} 1.3{sub stat} {+-} 1.7{sub sys}) Multiplication-Sign 10{sup -14} cm{sup -2} s{sup -1} TeV{sup -1}. The integral flux, F {sub {gamma}} = 4.0 Multiplication-Sign 10{sup -12} erg cm{sup -2} s{sup -1} above 1 TeV, corresponds to 0.2% of the pulsar spin-down power at 1.4 kpc. The energetics, colocation with the SNR, and the relatively small extent of the TeV emission strongly argue for the PWN origin of the TeV photons. We consider the origin of the TeV emission in CTA 1.

Aliu, E.; Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States)] [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada)] [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Arlen, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States)] [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Aune, T.; Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States)] [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R. [Department of Physics, Washington University, St. Louis, MO 63130 (United States)] [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States)] [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland)] [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States)] [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Collins-Hughes, E. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)] [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Cui, W. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States)] [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Duke, C. [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States)] [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States); Dumm, J. [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)] [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States); Dwarkadas, V. V. [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States)] [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States); Falcone, A., E-mail: muk@astro.columbia.edu, E-mail: smcarthur@ulysses.uchicago.edu [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); and others

2013-02-10T23:59:59.000Z

284

Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications  

E-Print Network [OSTI]

ZnTe heterostructures for photovoltaic applications Joshuatoo large for optimal photovoltaic e?ciency. By using band-nanowires can be used as photovoltaic devices with organic

Schrier, Joshua; Demchenko, Denis O.; Wang, Lin-Wang; Alivisatos, A. Paul

2008-01-01T23:59:59.000Z

285

Analysis of Alternate Methods to Obtain Stabilized Power Performance of CdTe and CIGS PV Modules (Presentation)  

SciTech Connect (OSTI)

This presentation outlines an analysis of alternate methods to obtain stabilized power performance of CdTe and CIGS PV modules.

del Cueto, J. A.; Deline, C. A.; Rummel, S.

2011-02-01T23:59:59.000Z

286

A Search for a Light Charged Higgs Boson Decaying to cs at ?s = 7 TeV.  

E-Print Network [OSTI]

??A search for a light charged Higgs boson decaying into cs is presented using data recorded in pp collisions at ?s = 7 TeV. The… (more)

Martyniuk, Alex Christopher

2011-01-01T23:59:59.000Z

287

The Tellurophosphate K4P8Te4: Phase-Change Properties, Exfoliation, Photoluminescence in Solution and Nanospheres  

E-Print Network [OSTI]

The Tellurophosphate K4P8Te4: Phase-Change Properties, Exfoliation, Photoluminescence in Solution- state NMR spectroscopy, electrospray ionization mass spectrometry, and PDF analysis indicate exfoliation

Weliky, David

288

Calcul de la variation de mobilit des lectrons dans PbTe type n entre 50 et 300 K  

E-Print Network [OSTI]

, Classification Physics Abstracts 72.20F 1. Introduction. Les chalcog6nures tel le tellurure de plomb (PbTe) sont

Paris-Sud XI, Université de

289

Exploring alternative symmetry breaking mechanisms at the LHC with 7, 8 and 10 TeV total energy  

E-Print Network [OSTI]

In view of the annnouncement that in 2012 the LHC will run at 8 TeV, we study the possibility of detecting signals of alternative mechanisms of ElectroWeak Symmetry Breaking, described phenomenologically by unitarized models, at energies lower than 14 TeV. A complete calculation with six fermions in the final state is performed using the PHANTOM event generator. Our results indicate that at 8 TeV some of the scenarios with TeV scale resonances are likely to be identified while models with no resonances or with very heavy ones will be inaccessible, unless the available luminosity will be much higher than expected.

Alessandro Ballestrero; Diogo Buarque Franzosi; Ezio Maina

2012-03-13T23:59:59.000Z

290

Characterization of Min-K TE-1400 Thermal Insulation  

SciTech Connect (OSTI)

Min-K 1400TE insulation material was characterized at Oak Ridge National Laboratory for use in structural applications under gradient temperature conditions. Initial compression testing was performed at room temperature at various loading rates ranging between 5 and 500 psi/hour (?35 and 3500 kPa/hour) to determine the effect of sample size and test specimen geometry on the compressive strength of Min-K. To determine the loading rates that would be used for stress relaxation testing, compression tests were next carried out at various levels followed by stress relaxation under constant strain at temperatures of 650, 850, and 900oC. Additional high temperature compression testing was performed with samples loaded at a rate of 53 psi/hour (365 kPa/hour) in three load steps of 50, 100 and 200 psi (345, 690, and 1380 kPa) with quick unload/load cycles between steps and followed by a hold period in load control (3 to 100 hours) to allow for sample creep. Testing was carried out at 190, 382, 813, and 850oC. Isothermal stress relaxation testing was performed at temperatures of 190, 382, 813, and 850oC and initial loads of 100 and 200 psi (690 and 1380 kPa). Gradient stress relaxation testing was intended to be performed at temperatures of 850/450oC and 450/190oC with initial loads of 100 or 200 psi (690 and 1380 kPa) performed under constant strain utilizing a twelve-step loading scheme with loading every half hour at a rate of 5.56% strain/hour.

Hemrick, James Gordon [ORNL; Lara-Curzio, Edgar [ORNL; King, James [ORNL

2008-07-01T23:59:59.000Z

291

Discovery of TeV Gamma-Ray Emission from the Cygnus Region  

SciTech Connect (OSTI)

The diffuse gamma radiation arising from the interaction of cosmic ray particles with matter and radiation in the Galaxy is one of the few probes available to study the origin of the cosmic rays. Milagro is a water Cherenkov detector that continuously views the entire overhead sky. The large field-of-view combined with the long observation time makes Milagro the most sensitive instrument available for the study of large, low surface brightness sources such as the diffuse gamma radiation arising from interactions of cosmic radiation with interstellar matter. In this paper we present spatial and flux measurements of TeV gamma-ray emission from the Cygnus Region. The TeV image shows at least one new source MGRO J2019+37 as well as correlations with the matter density in the region as would be expected from cosmic-ray proton interactions. However, the TeV gamma-ray flux as measured at {approx}12 TeV from the Cygnus region (after excluding MGRO J2019+37) exceeds that predicted from a conventional model of cosmic ray production and propagation. This observation indicates the existence of either hard-spectrum cosmic-ray sources and/or other sources of TeV gamma rays in the region.

Abdo, A.A.; Allen, B.; Berley, D.; Blaufuss, E.; Casanova, S.; Chen, C.; Coyne, D.G.; Delay, R.S.; Dingus, B.L.; Ellsworth, R.W.; Fleysher, L.; Fleysher, R.; Gonzalez,; Goodman, J.A.; Hays, E.; Hoffman, C.M.; Kolterman, B.E.; Kelley, L.A.; Lansdell, C.P.; Linnemann, J.T.; McEnery, J.E.

2006-11-28T23:59:59.000Z

292

Discovery of TeV Gamma-Ray Emission from the Cygnus Region of the Galaxy  

E-Print Network [OSTI]

The diffuse gamma radiation arising from the interaction of cosmic ray particles with matter and radiation in the Galaxy is one of the few probes available to study the origin of the cosmic rays. Milagro is a water Cherenkov detector that continuously views the entire overhead sky. The large field-of-view combined with the long observation time makes Milagro the most sensitive instrument available for the study of large, low surface brightness sources such as the diffuse gamma radiation arising from interactions of cosmic radiation with interstellar matter. In this paper we present spatial and flux measurements of TeV gamma-ray emission from the Cygnus Region. The TeV image shows at least one new source MGRO J2019+37 as well as correlations with the matter density in the region as would be expected from cosmic-ray proton interactions. However, the TeV gamma-ray flux as measured at ~12 TeV from the Cygnus region (after excluding MGRO J2019+37) exceeds that predicted from a conventional model of cosmic ray production and propagation. This observation indicates the existence of either hard-spectrum cosmic-ray sources and/or other sources of TeV gamma rays in the region.

A. A. Abdo; B. Allen; D. Berley; E. Blaufuss; S. Casanova; C. Chen; D. G. Coyne; R. S. Delay; B. L. Dingus; R. W. Ellsworth; L. Fleysher; R. Fleysher; M. M. Gonzalez; J. A. Goodman; E. Hays; C. M. Hoffman; B. E. Kolterman; L. A. Kelley; C. P. Lansdell; J. T. Linnemann; J. E. McEnery; A. I. Mincer; I. V. Moskalenko; P. Nemethy; D. Noyes; J. M. Ryan; F. W. Samuelson; P. M. Saz Parkinson; M. Schneider; A. Shoup; G. Sinnis; A. J. Smith; A. W. Strong; G. W. Sullivan; V. Vasileiou; G. P. Walker; D. A. Williams; X. W. Xu; G. B. Yodh

2006-11-21T23:59:59.000Z

293

Phenomenology of TeV Right-handed Neutrino and the Dark Matter Model  

E-Print Network [OSTI]

In a model of TeV right-handed (RH) neutrino by Krauss, Nasri, and Trodden, the sub-eV scale neutrino masses are generated via a 3-loop diagram with the vanishing see-saw mass forbidden by a discrete symmetry, and the TeV mass RH neutrino is simultaneously a novel candidate for the cold dark matter. However, we show that with a single RH neutrino it is not possible to generate two mass-square differences as required by the oscillation data. We extend the model by introducing one more TeV RH neutrino and show that it is possible to satisfy the oscillation pattern within the modified model. After studying in detail the constraints coming from the dark matter, lepton flavor violation and the muon anomalous magnetic moment, and the neutrinoless double beta decay, we explore the parameter space and derive predictions of the model. Finally, we study the production and decay signatures of the TeV RH neutrinos at TeV $e^+ e^-/\\mu^+ \\mu^-$ colliders.

Kingman Cheung; Osamu Seto

2004-03-08T23:59:59.000Z

294

Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La{sub 3}Cu{sub 5}Te{sub 7}  

SciTech Connect (OSTI)

The new lanthanum copper telluride La{sub 3}Cu{sub 5-x}Te{sub 7} has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) A, b=25.9466(9) A, c=7.3402(3) A, V=1567.9(1) A{sup 3}, Z=4 for La{sub 3}Cu{sub 4.86(4)}Te{sub 7}. The structure of La{sub 3}Cu{sub 5-x}Te{sub 7} is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra, and CuTe{sub 3} pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La{sub 3}Cu{sub 4.86}Te{sub 7} indicate that it is a p-type semiconductor in accordance with the electronic structure calculations. -- Graphical abstract: Oligomeric unit comprising interconnected CuTe{sub 3} pyramids and CuTe{sub 4} tetrahedra. Display Omitted Research highlights: {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} adopts a new structure type. {yields} All Cu sites exhibit deficiencies of various extents. {yields} The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra and CuTe{sub 3} pyramids. {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} is a p-type semiconductor.

Zelinska, Mariya; Assoud, Abdeljalil [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Kleinke, Holger, E-mail: kleinke@uwaterloo.c [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

2011-03-15T23:59:59.000Z

295

Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2Te3  

SciTech Connect (OSTI)

Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi{sub 2}Te{sub 3} with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi{sub 2}Te{sub 3} is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi{sub 2}Te{sub 3} also points to promising potential for high-temperature spintronics applications.

Siemons, W.

2010-02-24T23:59:59.000Z

296

First-Principles Study of Surface States of Bi{sub 2}Te{sub 3}  

SciTech Connect (OSTI)

Bi{sub 2}Te{sub 3} is a topological insulator with time reversal symmetry possessing a single Dirac cone at a given surface. The surface states of topological insulators play a critical role in exotic physical phenomena and their applications. We investigate the surface states of thin films of Bi{sub 2}Te{sub 3}(111) using density-functional theory including spin-orbit coupling. Considering one to six quintuple layers (QLs) of Bi{sub 2}Te{sub 3} films, we identify the surface states from calculated band structures using the decay length of the surface states and electron density plots. We show that the films of 1 and 2 QLs are too thin to hold the surface states protected topologically, and that for thicker films bands identified as surface states at {Gamma}-bar lose their surface-state features away from {Gamma}-bar. This method can be applied to other topological insulators.

Park, Kyungwha [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2011-12-26T23:59:59.000Z

297

Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys  

SciTech Connect (OSTI)

Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800?K for the sample with 30% Se content.

Bali, Ashoka; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, Karnataka (India); Wang, Heng; Snyder, G. Jeffrey [Department of Materials Science, California Institute of Technology, Pasadena, California 91125 (United States)

2014-07-21T23:59:59.000Z

298

Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications.

Beal, R. J.; Kana Kana, J. B. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Potter, B. G. Jr. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

2012-07-16T23:59:59.000Z

299

Temporal and temperature evolution of electric field in CdTe:In radiation detectors  

SciTech Connect (OSTI)

We employed measurement of the Pockels electro-optic effect to study the electric field and space charge dynamics in semi-insulating CdTe doped with indium. We performed measurements of time and temperature dependence of the electric field. The polarization due to space charge build-up decreases with increasing temperature. Increase of temperature, therefore, leads to de-polarization in CdTe:In detectors which are opposite to the CdTe:Cl samples studied to date. We have shown that the thermally activated depolarization cannot be explained by the conventional model used for the description of space charge formation so far and an alternative model involving a recombination level was suggested and successfully used.

D?di?, V., E-mail: dedicv@karlov.mff.cuni.cz; Zázvorka, J.; Rejhon, M.; Franc, J.; Grill, R. [Faculty of Mathematics and Physics, Institute of Physics, Charles University, KeKarlovu 5, Prague 2 CZ-121 16 (Czech Republic); Sellin, P. J. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom)

2014-08-07T23:59:59.000Z

300

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network [OSTI]

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2014-09-14T23:59:59.000Z

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301

Pair correlations in the neutrinoless double-{beta} decay candidate {sup 130}Te  

SciTech Connect (OSTI)

Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

Bloxham, T.; Freedman, S. J. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kay, B. P.; Schiffer, J. P.; Clark, J. A. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Deibel, C. M. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48825 (United States); Freeman, S. J.; Howard, A. M.; McAllister, S. A.; Sharp, D. K.; Thomas, J. S. [Schuster Laboratory, University of Manchester, Manchester, M13 9PL (United Kingdom); Parker, P. D. [A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States)

2010-08-15T23:59:59.000Z

302

Pair correlations in neutrinoless double {beta} decay candidate {sup 130}Te.  

SciTech Connect (OSTI)

Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

Bloxham, T.; Kay, B. P.; Schiffer, J. P.; Clark, J. A.; Deibel, C. M.; Freeman, S. J.; Freedman, S. J.; Howard, A. M.; McAllister, S. A.; Parker, P. D.; Sharp, D. K.; Thomas, J. S. (Physics); ( PSC-USR); (LBNL); (Michigan State Univ.); (Univ. of Manchester); (Yale Univ.)

2010-08-16T23:59:59.000Z

303

Reassessment of the NuTeV determination of the Weinberg angle  

SciTech Connect (OSTI)

In light of the recent discovery of the importance of the isovector EMC effect for the interpretation of the NuTeV determination of sin2 #18;W, it seems timely to reassess the central value and the errors on this fundamental Standard Model parameter derived from the NuTeV data. We also include earlier work on charge symmetry violation and the recent limits on a possible asymmetry between s and ¯s quarks. With these corrections we find a revised NuTeV result of sin2 #18;W = 0.2232 ± 0.0013(stat) ± 0.0024(syst), which is in excellent agreement with the running of sin2 #18;W predicted by the Standard Model.

W. Bentz, I.C. Cloet, J.T. Londergan and A.W. Thomas

2010-10-01T23:59:59.000Z

304

Energy spectrum of charge carriers in Ag{sub 2}Te  

SciTech Connect (OSTI)

On the basis of investigations of the temperature and concentration dependences of kinetic coefficients (the Hall coefficientR, the electrical conductivity {sigma}, and thermopower {alpha}{sub 0}) in n-type Ag{sub 2}Te, it is established that Ag atoms in Ag{sub 2}Te create the shallow donor levels located at a distance of (0.002-7 x 10{sup -5}T) eV from the bottom of the conduction band. It is shown that silver telluride has n-type conductivity starting with the deficiency of Ag {>=} 0.01 at % in the stoichiometric composition, and it is practically impossible to achieve the stoichiometric composition in Ag{sub 2}Te.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B. [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2008-11-15T23:59:59.000Z

305

Diffuse neutrinos from extragalactic supernova remnants: Dominating the 100 TeV IceCube flux  

E-Print Network [OSTI]

IceCube has measured a diffuse astrophysical flux of TeV-PeV neutrinos. The most plausible sources are unique high energy cosmic ray accelerators like hypernova remnants (HNRs) and remnants from gamma ray bursts in star-burst galaxies, which can produce primary cosmic rays with the required energies and abundance. In this case, however, ordinary supernova remnants (SNRs), which are far more abundant than HNRs, produce a comparable or larger neutrino flux in the ranges up to 100-150 TeV energies, implying a spectral break in the IceCube signal around these energies. The SNRs contribution in the diffuse flux up to these hundred TeV energies provides a natural baseline and then constrains the expected PeV flux.

Chakraborty, Sovan

2015-01-01T23:59:59.000Z

306

Thermoelectric study of crossroads material MnTe via sulfur doping  

SciTech Connect (OSTI)

Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe{sub 1-x}S{sub x} samples with nominal S content of x?=?0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe{sub 1-x}S{sub x} samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300?K to 773?K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe{sub 0.9}S{sub 0.1} was substantially enhanced over the pristine sample near 400?K, while the improvement of ZT became marginal at elevated temperatures. A ZT???0.65 at 773?K was obtained in all three samples.

Xie, Wenjie, E-mail: xie@imw.uni-stuttgart.de; Populoh, Sascha; Sagarna, Leyre; Trottmann, Matthias [Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis, Uberlandstrasse 129, CH-8600 Dübendorf (Switzerland); Ga??zka, Krzysztof [Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis, Uberlandstrasse 129, CH-8600 Dübendorf (Switzerland); Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012 Bern (Switzerland); Xiao, Xingxing [Institute for Materials Science, University of Stuttgart, DE-70569 Stuttgart (Germany); Liu, Yufei; He, Jian [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Weidenkaff, Anke [Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis, Uberlandstrasse 129, CH-8600 Dübendorf (Switzerland); Institute for Materials Science, University of Stuttgart, DE-70569 Stuttgart (Germany)

2014-03-14T23:59:59.000Z

307

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers  

SciTech Connect (OSTI)

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y. [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)] [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)

2013-10-28T23:59:59.000Z

308

Surface state dominated transport in topological insulator Bi{sub 2}Te{sub 3} nanowires  

SciTech Connect (OSTI)

We report on low temperature magnetoresistance measurements on single-crystalline Bi{sub 2}Te{sub 3} nanowires synthesized via catalytic growth and post-annealing in a Te-rich atmosphere. The observation of Aharonov-Bohm oscillations indicates the presence of topological surface states. Analyses of Subnikov-de Haas oscillations in perpendicular magnetoresistance yield extremely low two-dimensional carrier concentrations and effective electron masses, and very high carrier mobilities. All our findings are in excellent agreement with theoretical predictions of massless Dirac fermions at the surfaces of topological insulators.

Hamdou, Bacel, E-mail: bhamdou@physnet.uni-hamburg.de; Gooth, Johannes; Dorn, August; Nielsch, Kornelius, E-mail: knielsch@physnet.uni-hamburg.de [Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany)] [Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Pippel, Eckhard [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany)] [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany)

2013-11-04T23:59:59.000Z

309

Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform  

E-Print Network [OSTI]

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

Kikawa, T; Hiraki, T; Nakaya, T

2011-01-01T23:59:59.000Z

310

Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform  

E-Print Network [OSTI]

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

T. Kikawa; A. K. Ichikawa; T. Hiraki; T. Nakaya

2011-12-21T23:59:59.000Z

311

Ultrahigh Energy Cosmic Rays and Prompt TeV Gamma Rays from Gamma Ray Bursts  

E-Print Network [OSTI]

Gamma Ray Bursts (GRBs) have been proposed as one {\\it possible} class of sources of the Ultrahigh Energy Cosmic Ray (UHECR) events observed up to energies $\\gsim10^{20}\\ev$. The synchrotron radiation of the highest energy protons accelerated within the GRB source should produce gamma rays up to TeV energies. Here we briefly discuss the implications on the energetics of the GRB from the point of view of the detectability of the prompt TeV gamma rays of proton-synchrotron origin in GRBs in the up-coming ICECUBE muon detector in the south pole.

Pijushpani Bhattacharjee; Nayantara Gupta

2003-05-12T23:59:59.000Z

312

Measurement of Dijet Azimuthal Decorrelations in pp Collisions at {radical}(s)=7 TeV  

SciTech Connect (OSTI)

Azimuthal decorrelations between the two central jets with the largest transverse momenta are sensitive to the dynamics of events with multiple jets. We present a measurement of the normalized differential cross section based on the full data set ({integral}Ldt=36 pb{sup -1}) acquired by the ATLAS detector during the 2010 {radical}(s)=7 TeV proton-proton run of the LHC. The measured distributions include jets with transverse momenta up to 1.3 TeV, probing perturbative QCD in a high-energy regime.

Aad, G.; Ahles, F.; Beckingham, M.; Bernhard, R.; Bitenc, U.; Bruneliere, R.; Caron, S.; Carpentieri, C.; Christov, A.; Dahlhoff, A.; Dietrich, J.; Eckert, S.; Fehling-Kaschek, M.; Flechl, M.; Glatzer, J. [Fakultaet fuer Mathematik und Physik, Albert-Ludwigs-Universitaet, Freiburg i.Br. (Germany); Abbott, B. [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman Oklahoma (United States); Abdallah, J.; Bosman, M.; Casado, M. P.; Cavalli-Sforza, M. [Institut de Fisica d'Altes Energies and Universitat Autonoma de Barcelona and ICREA, Barcelona (Spain)

2011-04-29T23:59:59.000Z

313

Ionic conductivity and dielectric relaxation in {gamma}-irradiated TlGaTe{sub 2} crystals  

SciTech Connect (OSTI)

The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe{sub 2} crystals subjected to various {gamma}-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an S-shaped current-voltage characteristic containing a portion with negative differential resistance is observed in the crystals. In the region of critical voltages, current and voltage oscillations and imposed modulation are observed. Possible mechanisms of switching, ionic conductivity, disorder, and electrical instability in TlGaTe{sub 2} crystals are discussed.

Sardarli, R. M., E-mail: sardarli@yahoo.com; Samedov, O. A.; Abdullayev, A. P. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan); Huseynov, E. K. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Salmanov, F. T.; Alieva, N. A.; Agaeva, R. Sh. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan)

2013-05-15T23:59:59.000Z

314

Unique nanostructures and enhanced thermoelectric performance of melt-spun BiSbTe alloys  

SciTech Connect (OSTI)

We report a melt spinning technique followed by a quick spark plasma sintering procedure to fabricate high-performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material with unique microstructures. The microstructures consist of nanocrystalline domains embedded in amorphous matrix and 5-15 nm nanocrystals with coherent grain boundary. The significantly reduced thermal conductivity leads to a state-of-the-art dimensionless figure of merit ZT{approx}1.56 at 300 K, more than 50% improvement of that of the commercial Bi{sub 2}Te{sub 3} ingot materials.

Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

2009-03-09T23:59:59.000Z

315

Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells  

SciTech Connect (OSTI)

Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

Yang, Wen; Chang, Kai; /Beijing, Inst. Semiconductors; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-03-19T23:59:59.000Z

316

Shubnikov-de Haas Oscillations in the Bulk Rashba Semiconductor BiTeI  

SciTech Connect (OSTI)

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c-axis. The corresponding areas of the inner and outer Fermi surfaces around the A-point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.

Bell, C.; Bahramy, M.S.; Murakawa, H.; Checkelsky, J.G.; Arita, R.; Kaneko, Y.; Onose, Y.; Nagaosa, N.; Tokura, Y.; Hwang, H.Y.

2012-07-11T23:59:59.000Z

317

Grain boundary enhanced carrier collection in CdTe solar cells  

SciTech Connect (OSTI)

The atomic structure and composition of grain boundaries in CdCl2 treated CdTe solar cells have been determined with aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A high fraction of Te in the grain boundary regions has been substituted by Cl. Density functional calculations reveal the origin of such segregation levels, and further indicate the GBs are likely inverted to n-type, establishing local P-N junctions, which help to separate electron-hole carriers. The results are in good agreement with electron beam induced current observations of high collection efficiency at grain boundaries.

Li, Chen [ORNL] [ORNL; Wu, Yelong [University of Toledo] [University of Toledo; Poplawsky, Jonathan D [ORNL] [ORNL; Paudel, Naba [University of Toledo] [University of Toledo; Yin, Wanjian [University of Toledo] [University of Toledo; Pennycook, Timothy [University of Oxford] [University of Oxford; Haigh, Sarah [University of Manchester, UK] [University of Manchester, UK; Oxley, Mark P [ORNL] [ORNL; Lupini, Andrew R [ORNL] [ORNL; Al-jassim, Mowafak [National Renewable Energy Laboratory (NREL)] [National Renewable Energy Laboratory (NREL); Pennycook, Stephen J [ORNL] [ORNL; Yan, Yanfa [University of Toledo] [University of Toledo

2014-01-01T23:59:59.000Z

318

PHOTOREFRACTIVE RESPONSE OF CdTe:V UNDER AC ELECTRIC FIELD FROM 1 TO 1.5m  

E-Print Network [OSTI]

for the extension of the photorefractive effect towards the wavelength region of 1.3-1.5µm. Cadmium Telluride (CdTe conduction (hole-electron competition). Sample and experimental set-up presentations : The CdTe sample we

319

Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells  

SciTech Connect (OSTI)

Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: • Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. • Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. • Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. • NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

Tang, Song; Cai, Qingsong [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Chibli, Hicham [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Allagadda, Vinay [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Nadeau, Jay L. [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Mayer, Gregory D., E-mail: greg.mayer@ttu.edu [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States)

2013-10-15T23:59:59.000Z

320

Thermoelectric Properties of Nb3SbxTe7-x Compounds Sidney Wang, G. Jeff Snyder, and Thierry Caillat  

E-Print Network [OSTI]

of the resulting compounds. Introduction The search for more efficient thermoelectric materials has largely as a possible thermoelectric material by Jensen and Kjekshus, who predicted Nb3Sb2Te5 to be a semiconductor. In this study, the potential of Nb3Sb2Te5 as a thermoelectric material was examined via tests on Seebeck

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While these samples are representative of the content of NLEBeta,
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321

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

322

OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA-ARROYO  

E-Print Network [OSTI]

145 OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA and an n-type CdHgTe alloy of uniform band gap as the base region. The optimization of solar energy conversion is conducted with respect to two constitutive para- meters : the gradient of the band gap

Boyer, Edmond

323

Search for resonances in the dijet mass spectrum from 7 TeV pp collisions at CMS  

E-Print Network [OSTI]

A search for narrow resonances with a mass of at least 1 TeV in the dijet mass spectrum is performed using pp collisions at ?s = 7 TeV corresponding to an integrated luminosity of 1 fb[superscript ?1], collected by the CMS ...

CMS Collaboration

324

Mechanically-exfoliated stacks of thin films of Bi2Te3 topological insulators with enhanced thermoelectric performance  

E-Print Network [OSTI]

Mechanically-exfoliated stacks of thin films of Bi2Te3 topological insulators with enhanced; published online 1 October 2010 The authors report on "graphene-like" mechanical exfoliation of single can be used to mechanically exfoliate the ultrathin films of Bi2Te3 with the thickness down

325

Sonochemical and hydrothermal synthesis of PbTe nanostructures with the aid of a novel capping agent  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • PbTe nanostructures were prepared with the aid of Schiff-base compound. • Sonochemical and hydrothermal methods were employed to fabricate PbTe nanostrucrues. • The effect of preparation parameters on the morphology of PbTe was investigated. - Abstract: In this work, a new Schiff-base compound derived from 1,8-diamino-3,6-dioxaoctane and 2-hydroxy-1-naphthaldehyde marked as (2-HyNa)-(DaDo) was synthesized, characterized, and then used as capping agent for the preparation of PbTe nanostructures. To fabricate PbTe nanostructures, two different synthesis methods; hydrothermal and sonochemical routes, were applied. To further investigate, the effect of preparation parameters like reaction time and temperature in hydrothermal synthesis and sonication time in the presence of ultrasound irradiation on the morphology and purity of the final products was tested. The products were analyzed with the aid of SEM, TEM, XRD, FT-IR, and EDS. Based on the obtained results, it was found that pure cubic phased PbTe nanostructures have been obtained by hydrothermal and sonochemical approaches. Besides, SEM images showed that cubic-like and rod-like PbTe nanostructures have been formed by hydrothermal and sonochemical methods, respectively. Sonochemical synthesis of PbTe nanostructures was favorable, because the synthesis time of sonochemical method was shorter than that of hydrothermal method.

Fard-Fini, Shahla Ahmadian [Department of Chemistry, Payame Noor University, P.O. Box 19395-3697, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Salavati-Niasari, Masoud, E-mail: salavati@kashanu.ac.ir [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of); Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of); Mohandes, Fatemeh [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of)

2013-10-15T23:59:59.000Z

326

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller  

E-Print Network [OSTI]

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

McCluskey, Matthew

327

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface  

SciTech Connect (OSTI)

Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is Bi{sub x}Sb{sub 1-x}, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb{sub 2}Te{sub 3}, Sb{sub 2}Se{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}. Our calculations predict that Sb{sub 2}Te{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} are topological insulators, whereas Sb{sub 2}Se{sub 3} is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the point. In addition, we predict that Bi{sub 2}Se{sub 3} has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

Zhang, Haijun; /Beijing, Inst. Phys.; Liu, Chao-Xing; /Tsinghua U., Beijing; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-02-24T23:59:59.000Z

328

Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell  

SciTech Connect (OSTI)

The dependences of the open-circuit voltage, fill factor, and efficiency of the thin-film CdS/CdTe solar cell on the resistivity {rho} and carrier lifetime {tau} in the absorbing CdTe layer were studied. In the common case in which the uncompensated acceptor concentration and the electron lifetime in the CdTe layer are within 10{sup 15}-10{sup 16} cm{sup -3} and 10{sup -10}-10{sup -9} s, the calculation results correspond to the achieved efficiency of the best thin-film CdS/CdTe solar cells. It was shown that, by decreasing {rho} and increasing {tau} in the absorbing CdTe layer, the open-circuit voltage, fill factor, and efficiency can be substantially increased, with their values approaching the theoretical limit for such devices.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V. [Yuriy Fedkovych Chernivtsi National University (Ukraine)

2010-10-15T23:59:59.000Z

329

MATERIALS FOR SOLAR PHOTOCELLS : PLACE OF CdTe Laboratoire de Physique des Solides C. N. R. S., 1, place Aristide-Briand, 92190 Meudon, France  

E-Print Network [OSTI]

MATERIALS FOR SOLAR PHOTOCELLS : PLACE OF CdTe M. RODOT Laboratoire de Physique des Solides C. N. R général, puis appliqués à CdTe. On montre que CdTe est l'un des matériaux les plus prometteurs. Une revue des cellules au CdTe doivent encore être obtenues. Abstract. 2014 The choice of the best materials

Paris-Sud XI, Université de

330

HOMOGENEITY ALONG Cl-COMPENSATED THM GROWN CdTe INGOT NGO-TICH-PHUOC, G. M. MARTIN, C. BELIN and E. FABRE  

E-Print Network [OSTI]

195 HOMOGENEITY ALONG Cl-COMPENSATED THM GROWN CdTe INGOT NGO-TICH-PHUOC, G. M. MARTIN, C. BELIN resistivity CdTe is believed to present some potentialities as a material for y-rays detection at room carried out [8-9]. This paper presents an assessment of Cl-compen- sated, THM grown CdTe ingots : emphasis

Paris-Sud XI, Université de

331

THE RELATIONSHIP OF CdS/CdTe CELL BAND PROFILES TO J-V CHARACTERISTICS AND BIAS-DEPENDENT QUANTUM EFFICIENCY  

E-Print Network [OSTI]

-over, and, in some cases, long J-V and capacitance transient effects. CdTe is highly compensated containing by charge in the bulk CdTe within the absorber. PATHWAYS TO INCREASED EFFICIENCY There are several general to realize in practice. One pathway is by increasing the net negative charge in the CdTe by "p-type doping

Sites, James R.

332

Diffusion of Cd vacancy and interstitials of Cd, Cu, Ag, Au and Mo in CdTe: A first principles investigation  

E-Print Network [OSTI]

Diffusion of Cd vacancy and interstitials of Cd, Cu, Ag, Au and Mo in CdTe: A first principles, Au, and Mo in bulk CdTe. The high symmetry Wyckoff position 4(b) is the global minimum energy enhanced the commercial viability of solar cells to generate electricity. Among them, cadmium telluride (CdTe

Khare, Sanjay V.

333

Investigation of the evolution of single domain ,,111...B CdTe films by molecular beam epitaxy on miscut ,,001...Si substrate  

E-Print Network [OSTI]

Investigation of the evolution of single domain ,,111...B CdTe films by molecular beam epitaxy; accepted for publication 22 July 1998 A comprehensive view of the microstructure of 111 B CdTe films grown and scanning transmission electron microscopy. It is found that in the initial growth stage, CdTe nucleates

Pennycook, Steve

334

TeV GAMMA-RAY SURVEY OF THE NORTHERN HEMISPHERE SKY USING THE MILAGRO OBSERVATORY R. Atkins,1,2  

E-Print Network [OSTI]

to search the entire northern hemisphere for such objects. The search for short bursts of TeV gamma rays hasTeV GAMMA-RAY SURVEY OF THE NORTHERN HEMISPHERE SKY USING THE MILAGRO OBSERVATORY R. Atkins,1,2 W) are presented. The data have been searched for steady point sources of TeV gamma rays between declinations of 1

California at Santa Cruz, University of

335

Upsilon production cross section in pp collisions at ?s=7??TeV  

E-Print Network [OSTI]

The ?(1S), ?(2S), and ?(3S) production cross sections in proton-proton collisions at ?s=7??TeV are measured using a data sample collected with the CMS detector at the LHC, corresponding to an integrated luminosity of ...

Paus, Christoph M E

2011-10-05T23:59:59.000Z

336

Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure  

E-Print Network [OSTI]

Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure J. Zhu1 *, J. L. Zhang1 *, P superconductivity and topology nature. A s new states of quantum matter, topological insulators are characterized to topological insulators, topological superconductors are expected to have a full pairing gap in the bulk

Wang, Wei Hua

337

EXAFS Studies of Ga Doped Pb1-xMnxTe  

SciTech Connect (OSTI)

We have employed the X-Rays Absorption Fine Structure (EXAFS) technique to resolve the local structure of Pb1-xMnxTe (Ga) in order to provide answers on questions concerning the exact positions and charge states of constitutive and impurity atoms, possibilities and features of their ordering and (or) clustering, as well as configurational and thermal disorder in the system.

Radisavljevic, I.; Ivanovic, N.; Novakovic, N. [Vinca- Institute of Nuclear Sciences, POB 522, 11001 Belgrade (Serbia and Montenegro); Romcevic, N. [Institute of Physics, Pregrevica 118, 11000 Belgrade (Serbia and Montenegro); Mahnke, H.-E. [Bereich Strukturforschung, Hahn-Meitner-Institut Berlin GmbH, D-14109 Berlin (Germany)

2007-04-23T23:59:59.000Z

338

REVIEW OF OPTICAL APPLICATIONS OF CdTe Mobil Tyco Solar Energy Corporation 16 Hickory Drive  

E-Print Network [OSTI]

REVIEW OF OPTICAL APPLICATIONS OF CdTe R. O. BELL Mobil Tyco Solar Energy Corporation 16 Hickory of optical applications. These include electrooptic modulation, high power laser windows, electroluminescence will be paid to the various optical absorption mechanisms and the effects of impurities on the optical behavior

Paris-Sud XI, Université de

339

Investigation of deep level defects in CdTe thin films  

SciTech Connect (OSTI)

In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

2014-02-21T23:59:59.000Z

340

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint  

SciTech Connect (OSTI)

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

2011-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices  

SciTech Connect (OSTI)

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t{sub 1}) have provided insightful correlation with broad device functionality. However, we have more recently found that t{sub 1} does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t{sub 1} and the slower TRPL decay (t{sub 2}) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t{sub 2}. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t{sub 2}. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t{sub 2}, and therefore t{sub 2} data may demonstrate significant scatter when correlated with performance parameters.

Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

2011-01-01T23:59:59.000Z

342

Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

2012-02-01T23:59:59.000Z

343

OpTeC Annual Meeting Agenda 1 11 Sept. 2014 Optical Science & Engineering Conference  

E-Print Network [OSTI]

Devices for Polarization Control 9:05 am Tianbo Liu & David Dickensheets MSU Electrical and Computer in an SOFC #12;OpTeC Annual Meeting Agenda 2 11 Sept. 2014 9:40 am Alexander Mikhaylov,a Lauren Bennett

Maxwell, Bruce D.

344

Search for Three-Jet Resonances in pp Collisions at ?s=7??TeV  

E-Print Network [OSTI]

A search for three-jet hadronic resonance production in pp collisions at a center-of-mass energy of 7 TeV has been conducted by the CMS Collaboration at the LHC, using a data sample corresponding to an integrated luminosity ...

Bauer, Gerry P.

345

Search for anomalous production of multilepton events in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

A search for anomalous production of events with three or more isolated leptons in pp collisions at ?s = 7 TeV is presented. The data, corresponding to an integrated luminosity of 4.98 fb[superscript ?1], were collected ...

Bauer, Gerry P.

346

Enhanced Thermoelectric Properties of Solution Grown Bi2Te3-xSex Nanoplatelet Composites  

E-Print Network [OSTI]

is the lattice contributions) and T is average absolute temperature. An ideal thermoelectric material on the efficiency of thermoelectric materials, and hence a decoupling of these parameters is required to improveEnhanced Thermoelectric Properties of Solution Grown Bi2Te3-xSex Nanoplatelet Composites Ajay Soni

Xiong, Qihua

347

OG 2.1.11 1 Milagrito Detection of TeV Emission from Mrk 501  

E-Print Network [OSTI]

detector near Los Alamos, New Mexico, has been operated as a sky monitor at energies of a few TeV between: With the detection of 4 Galactic and 3 extragalatic sources, Very High Energy (VHE) fl­ray astronomy, studying the sky at energies above 100 GeV, has become one of the most interesting frontiers in astronomy. Source

California at Santa Cruz, University of

348

SCIPP 99/12 Study of Active Galactic Nuclei at TeV Energies  

E-Print Network [OSTI]

SCIPP 99/12 March 1999 Study of Active Galactic Nuclei at TeV Energies with Milagrito S. Westerhoff of California, Irvine, CA 92697, USA (6) George Mason University, Fairfax, VA 22030, USA (7) University of New Hampshire, Durham, NH 03824, USA (8) New York University, New York, NY 10003, USA (9) Los Alamos National

California at Santa Cruz, University of

349

Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals  

E-Print Network [OSTI]

99.997 %), 1-dodecanethiol (1-DDT, > 98 %), anhydrous 1,2Then, 0.03 g of dried 1-DDT was mixed with 1.5 mL of a 10stirring, and the 1-DDT/TOP-Te solution was immediately

Polking, Mark J.

2010-01-01T23:59:59.000Z

350

Discovery of TeV Gamma-Ray Emission from the Cygnus Region of the Galaxy  

E-Print Network [OSTI]

The diffuse gamma radiation arising from the interaction of cosmic ray particles with matter and radiation in the Galaxy is one of the few probes available to study the origin of the cosmic rays. Milagro is a water Cherenkov detector that continuously views the entire overhead sky. The large field-of-view combined with the long observation time makes Milagro the most sensitive instrument available for the study of large, low surface brightness sources such as the diffuse gamma radiation arising from interactions of cosmic radiation with interstellar matter. In this paper we present spatial and flux measurements of TeV gamma-ray emission from the Cygnus Region. The TeV image shows at least one new source MGRO J2019+37 as well as correlations with the matter density in the region as would be expected from cosmic-ray proton interactions. However, the TeV gamma-ray flux as measured at ~12 TeV from the Cygnus region (after excluding MGRO J2019+37) exceeds that predicted from a conventional model of cosmic ray prod...

Abdo, A A; Berley, D; Blaufuss, E; Casanova, S; Chen, C; Coyne, D G; Delay, R S; Dingus, B L; Ellsworth, R W; Fleysher, L; Fleysher, R; González, M M; Goodman, J A; Hays, E; Hoffman, C M; Kolterman, B E; Kelley, L A; Lansdell, C P; Linnemann, J T; McEnery, J E; Mincer, A I; Moskalenko, I V; Némethy, P; Noyes, D; Ryan, J M; Samuelson, F W; Parkinson, P M S; Schneider, M; Shoup, A; Sinnis, G; Smith, A J; Strong, A W; Sullivan, G W; Vasileiou, V; Walker, G P; Williams, D A; Xu, X W; Yodh, G B

2006-01-01T23:59:59.000Z

351

Detection of TeV Gamma-Rays from extended sources with Milagro  

E-Print Network [OSTI]

The Milagro gamma-ray observatory employs a water Cherenkov detector to observe extensive air showers produced by high-energy particles impacting in the Earth's atmosphere. A 4800 m$^{2}$ pond instrumented with 723 8" PMTs detects Cherenkov light produced by secondary air-shower particles. An array of 175 4000 liter water tanks surrounding the central pond detector was recently added, extending the physical area of the Milagro observatory to 40,000 m$^{2}$ and substantially increasing the sensitivity of the detector. Because of its wide field of view and high duty cycle, Milagro is ideal for monitoring the northern sky almost continuously ($>$90% duty cycle) in the 100 GeV to 100 TeV energy range. Here we discuss the first detection of TeV gamma-rays from the inner Galactic plane region. We also report the detection of an extended TeV source coincident with the EGRET source 3EG J0520+2556, as well as the observation of extended TeV emission from the Cygnus region of the Galactic plane.

Parkinson, P M S; Atkins, R; Benbow, W; Berley, D; Blaufuss, E; Coyne, D G; De Young, T R; Dingus, B L; Dorfan, D E; Ellsworth, R W; Fleysher, L; Gisler, G; González, M M; Goodman, J A; Haines, T J; Hays, E; Hoffman, C M; Kelley, L A; Lansdell, C P; Linnemann, J T; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Noyes, D; Ryan, J M; Samuelson, F W; Saz-Parkinson, P M; Shoup, A; Sinnis, G; Smith, A J; Sullivan, G W; Williams, D A; Wilson, M E; Xu, X W; Yodh, G B

2005-01-01T23:59:59.000Z

352

Rational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties  

E-Print Network [OSTI]

, which can generate electricity by recovering waste heat or be used as solid-state cooling devices, have-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliableRational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties

Xu, Xianfan

353

Expectations for neutron-antineutron oscillation time from TeV scale baryogenesis  

SciTech Connect (OSTI)

A TeV scale extension of the standard model that incorporates the seesaw mechanism for neutrino masses along with quark-lepton unification is presented. It is shown that this model leads to the {Delta}B= 2 baryon number violating process of neutron-antineutron (n-bar n) oscillation. The model has all the ingredients to generate the observed baryon asymmetry of the universe using the B-violating decay of a scalar field involved in the seesaw mechanism. The B-violating decay arises from the exchange of color sextet scalars which have TeV scale masses. Baryogenesis occurs below the sphaleron decoupling temperature and has been termed post-sphaleron baryogenesis. Here we show that the constraints of TeV scale baryogenesis, when combined with the neutrino oscillation data and restrictions from flavor changing neutral currents mediated by the colored scalars imply an upper limit on the n-bar n oscillation time of 5 Multiplication-Sign 10{sup 10} sec. regardless of the quark-lepton unification scale. If this scale is relatively low, in the (200 - 250) TeV range, {tau}{sub n-bar} {sub n} is predicted to be less than 10{sup 10} sec., which is accessible to the next generation of proposed experiments.

Babu, K. S. [Department of Physics, Oklahoma State University, Stillwater, OK 74078 (United States); Bhupal Dev, P. S. [Consortium for Fundamental Physics, School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Fortes, Elaine C. F. S. [Instituto de Fisica Teorica-Universidade Estadual Paulista, R. Dr. Bento Teobaldo Ferraz 271, Sao Paulo-SP, 01140-070 (Brazil); Mohapatra, Rabindra N. [Maryland Center for Fundamental Physics and Department of Physics, University of Maryland, College Park, MD 20742 (United States)

2013-05-23T23:59:59.000Z

354

PyR@TE: Renormalization Group Equations for General Gauge Theories  

E-Print Network [OSTI]

Although the two-loop renormalization group equations for a general gauge field theory have been known for quite some time, deriving them for specific models has often been difficult in practice. This is mainly due to the fact that, albeit straightforward, the involved calculations are quite long, tedious and prone to error. The present work is an attempt to facilitate the practical use of the renormalization group equations in model building. To that end, we have developed two completely independent sets of programs written in Python and Mathematica, respectively. The Mathematica scripts will be part of an upcoming release of SARAH 4. The present article describes the collection of Python routines that we dubbed PyR@TE which is an acronym for "Python Renormalization group equations At Two-loop for Everyone". In PyR@TE, once the user specifies the gauge group and the particle content of the model, the routines automatically generate the full two-loop renormalization group equations for all (dimensionless and dimensionful) parameters. The results can optionally be exported to Latex and Mathematica, or stored in a Python data structure for further processing by other programs. For ease of use, we have implemented an interactive mode for PyR@TE in form of an IPython Notebook. As a first application, we have generated with PyR@TE the renormalization group equations for several non-supersymmetric extensions of the Standard Model and found some discrepancies with the existing literature.

Florian Lyonnet; Ingo Schienbein; Florian Staub; Akin Wingerter

2013-09-26T23:59:59.000Z

355

Search for Stopped Gluinos in pp Collisions at root s=7 TeV  

E-Print Network [OSTI]

The results of the first search for long-lived gluinos produced in 7 TeV pp collisions at the CERN Large Hadron Collider are presented. The search looks for evidence of long-lived particles that stop in the CMS detector ...

Alver, Burak Han

356

Les Houches 2013: Physics at TeV Colliders: Standard Model Working Group Report  

E-Print Network [OSTI]

This Report summarizes the proceedings of the 2013 Les Houches workshop on Physics at TeV Colliders. Session 1 dealt primarily with (1) the techniques for calculating standard model multi-leg NLO and NNLO QCD and NLO EW cross sections and (2) the comparison of those cross sections with LHC data from Run 1, and projections for future measurements in Run 2.

J. Butterworth; G. Dissertori; S. Dittmaier; D. de Florian; N. Glover; K. Hamilton; J. Huston; M. Kado; A. Korytov; F. Krauss; G. Soyez; J. R. Andersen; S. Badger; L. Barzè; J. Bellm; F. U. Bernlochner; A. Buckley; J. Butterworth; N. Chanon; M. Chiesa; A. Cooper-Sarkar; L. Cieri; G. Cullen; H. van Deurzen; G. Dissertori; S. Dittmaier; D. de Florian; S. Forte; R. Frederix; B. Fuks; J. Gao; M. V. Garzelli; T. Gehrmann; E. Gerwick; S. Gieseke; D. Gillberg; E. W. N. Glover; N. Greiner; K. Hamilton; T. Hapola; H. B. Hartanto; G. Heinrich; A. Huss; J. Huston; B. Jäger; M. Kado; A. Kardos; U. Klein; F. Krauss; A. Kruse; L. Lönnblad; G. Luisoni; Daniel Maître; P. Mastrolia; O. Mattelaer; J. Mazzitelli; E. Mirabella; P. Monni; G. Montagna; M. Moretti; P. Nadolsky; P. Nason; O. Nicrosini; C. Oleari; G. Ossola; S. Padhi; T. Peraro; F. Piccinini; S. Plätzer; S. Prestel; J. Pumplin; K. Rabbertz; Voica Radescu; L. Reina; C. Reuschle; J. Rojo; M. Schönherr; J. M. Smillie; J. F. von Soden-Fraunhofen; G. Soyez; R. Thorne; F. Tramontano; Z. Trocsanyi; D. Wackeroth; J. Winter; C-P. Yuan; V. Yundin; K. Zapp

2014-05-05T23:59:59.000Z

357

Results from Milagrito on TeV Emission by Active Galactic Nuclei  

E-Print Network [OSTI]

telescopes. INTRODUCTION Milagro is an experiment to study gamma­rays with energy near one TeV using a large water­Cherenkov detector. Very high­energy particles interacting in the atmosphere produce extensive air [4] used a man­made water reservoir, shown in Figure 1, in the Jemez Mountains of New Mexico

California at Santa Cruz, University of

358

14%-efficient flexible CdTe solar cells on ultra-thin glass substrates  

SciTech Connect (OSTI)

Flexible glass enables high-temperature, roll-to-roll processing of superstrate devices with higher photocurrents than flexible polymer foils because of its higher optical transmission. Using flexible glass in our high-temperature CdTe process, we achieved a certified record conversion efficiency of 14.05% for a flexible CdTe solar cell. Little has been reported on the flexibility of CdTe devices, so we investigated the effects of three different static bending conditions on device performance. We observed a consistent trend of increased short-circuit current and fill factor, whereas the open-circuit voltage consistently dropped. The quantum efficiency under the same static bend condition showed no change in the response. After storage in a flexed state for 24 h, there was very little change in device efficiency relative to its unflexed state. This indicates that flexible glass is a suitable replacement for rigid glass substrates, and that CdTe solar cells can tolerate bending without a decrease in device performance.

Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Meysing, D. M.; Wolden, C. A. [Colorado School of Mines, Golden, Colorado 80401 (United States); Garner, S.; Cimo, P. [Corning Incorporated, Corning, New York 14831 (United States)

2014-04-07T23:59:59.000Z

359

The Drivetrain of Sustainability Powering innovation in Clean teCh  

E-Print Network [OSTI]

The Drivetrain of Sustainability Powering innovation in Clean teCh iNSiDe: BUSiNeSS OF HeALTH CARe energy use, generation and storage, as well as other necessities of life, environmentally responsible of Management, I hope to participate in what many expect to be the next big chapter of the California Dream

California at Davis, University of

360

High thermoelectric performance by resonant dopant indium in nanostructured SnTe  

E-Print Network [OSTI]

From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this ...

Liao, Bolin

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Study of forward Z + jet production in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

A measurement of the Z(? ? [superscript +] ? [superscript ?]) + jet production cross-section in pp collisions at a centre-of-mass energy ?s = 7 TeV is presented. The analysis is based on an integrated luminosity of 1.0 ...

Williams, Michael

362

Charge-carrier transport and recombination in heteroepitaxial CdTe  

SciTech Connect (OSTI)

We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5??m from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650?cm{sup 2} (Vs){sup ?1} and diffusion coefficient D of 17?cm{sup 2}?s{sup ?1}. We find limiting recombination at the epitaxial film surface (surface recombination velocity S{sub surface}?=?(2.8?±?0.3)?×?10{sup 5?}cm?s{sup ?1}) and at the heteroepitaxial interface (interface recombination velocity S{sub interface}?=?(4.8?±?0.5)?×?10{sup 5?}cm?s{sup ?1}). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

Kuciauskas, Darius, E-mail: Darius.Kuciauskas@nrel.gov; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401-3305 (United States); Colegrove, Eric; Sivananthan, S. [Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, Illinois 60612 (United States)

2014-09-28T23:59:59.000Z

363

Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint  

SciTech Connect (OSTI)

A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

2008-05-01T23:59:59.000Z

364

Could the Wein fireball be associated to the "orphan" TeV flares ?  

E-Print Network [OSTI]

TeV $\\gamma$-ray detections in flaring states without activity in X-rays from blazars have attracted much attention due to the irregularity of these "orphan" flares. Although the synchrotron self-Compton model has been very successful in explaining the spectral energy distribution and spectral variability of these sources, it has not been able to describe these atypical flaring events. On the other hand, an electron-positron pair plasma at the base of the AGN jet was proposed as the mechanism of bulk acceleration of relativistic outflows. This plasma in quasi-themal equilibrium called Wein fireball emits radiation at MeV-peak energies serving as target of accelerated protons. In this work we describe the "orphan" TeV flares presented in blazars 1ES 1959+650 and Mrk421 assuming geometrical considerations in the jet and evoking the interactions of Fermi-accelerated protons and MeV-peak target photons coming from the Wein fireball. After describing successfully these "orphan" TeV flares, we correlate the TeV $\\g...

Fraija, Nissim

2015-01-01T23:59:59.000Z

365

Nuclear structure relevant to neutrinoless double beta decay candidate {sup 130}Te and other recent results  

SciTech Connect (OSTI)

We have undertaken a series of single-nucleon and pair transfer reaction measurements to help constrain calculations of the nuclear matrix elements for neutrinoless double beta decay. In this talk, a short overview of measurements relevant to the {sup 130}Te?{sup 130}Xe system is given. Brief mention is made of other recent and forthcoming results.

Kay, B. P. [Physics Division, Argonne National Laboratory, Illinois 60439 (United States)

2013-12-30T23:59:59.000Z

366

UNIVERSITY OF CALIFORNIA Search for a TeV Component of GammaRay Bursts  

E-Print Network [OSTI]

UNIVERSITY OF CALIFORNIA IRVINE Search for a TeV Component of Gamma­Ray Bursts Using the Milagrito Acknowledgements xiii Curriculum Vitae xv Abstract xvi 1. Introduction 1 2. Gamma­Ray Bursts: Observations.2 The Compton Gamma­Ray Observatory . . . . . . . . . . . . . . . . . . . 6 2.3 BATSE's Contributions

California at Santa Cruz, University of

367

Industrial Upscaling of CdTe/CdS Thin Film Solar Cells , A. Bosioa  

E-Print Network [OSTI]

, with the participation of the Marcegaglia industrial group, IFIS Bank of Venice, the contribution of Ministry 905223. E-mail address: Nicola.Romeo@unipr.it (Nicola Romeo). 1 INTRODUCTION CdTe with its energy gap" which means that only a few microns of the material are needed to absorb 90% of photons with energy

Romeo, Alessandro

368

Measurement of upsilon production in 7 TeV pp collisions at ATLAS  

E-Print Network [OSTI]

Using 1.8??fb[superscript -1] of pp collisions at a center-of-mass energy of 7 TeV recorded by the ATLAS detector at the Large Hadron Collider, we present measurements of the production cross sections of ?(1S,2S,3S) mesons. ...

Taylor, Frank E.

369

1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long  

E-Print Network [OSTI]

to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. We have developed1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long term stable performance for the solar cell, therefore high specific power (ratio of out- put power to the weight) solar cells

Romeo, Alessandro

370

Current Transients in CdS/CdTe Solar Cells Alan Fahrenbruch  

E-Print Network [OSTI]

a red (630 nm) LED with an output equivalent to 1 sun for light data. Red (630 nm) and blue (470 nmCurrent Transients in CdS/CdTe Solar Cells Alan Fahrenbruch Colorado State University Department is completely reversible, with a decay to the DS state. The current/time data were taken using an HP 7090A A

Sites, James R.

371

Transport Model Linear Evaluation Parametric Scan: limit of Te,i = 0  

E-Print Network [OSTI]

, G. W. Hammett Princeton Plasma Physics Laboratory, Princeton, NJ 2011 U.S. Transport Task Force]. In addition, the outward heat flux is less than the convective heat flux, due to preferential transport of low-ion coupling suppress the edge Ti resulting in a steep ion temperature gradient and low Ti /Te which drive

Hammett, Greg

372

MilagroA TeV Observatory for Gamma Ray Bursts  

E-Print Network [OSTI]

Milagro­A TeV Observatory for Gamma Ray Bursts B.L. Dingus and the Milagro Collaboration Los energy gamma-rays from gamma-ray bursts. The highest energy gamma rays supply very strong constraints on the nature of gamma-ray burst sources as well as fundamental physics. Because the highest energy gamma-rays

California at Santa Cruz, University of

373

Leptonic origin of TeV gamma-rays from Supernova Remnants  

E-Print Network [OSTI]

The lineless power-law emission observed by ASCA from the northeastern rim of the supernova remnant SN1006 has recently been interpreted as synchrotron radiation of electrons with energies around 100 TeV. In this letter we calculate the flux of inverse Compton emission at TeV photon energies that is a natural consequence of the existence of such high energy electrons and the cosmic microwave background. We find that the predicted flux is near the present sensitivity limit of the southern \\v Cerenkov telescope CANGAROO, and should be detectable with the next performance improvements. The spectrum of SN1006 at a few TeV will be very soft. The existence of such highest energy electrons in SN1006 may not be a unique to this remnant. We can therefore conclude that the detection of TeV $\\gamma$-ray emission in any supernova remnant does not necessarily provide evidence for a large number of cosmic ray nucleons in these objects, and thus is no simple test of cosmic ray origin as far as nucleons are concerned.

M. Pohl

1996-02-22T23:59:59.000Z

374

First measurement of hadronic event shapes in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

Hadronic event shapes have been measured in proton–proton collisions at ?s =7 TeV, with a data sample collected with the CMS detector at the LHC. The sample corresponds to an integrated luminosity of 3.2 pb-1. Event-shape ...

CMS Collaboration

375

Grain growth behavior of Pb-Cu-Te cable sheathing alloys  

SciTech Connect (OSTI)

Lead alloys are extensively used as sheathing material for power and telecommunication cables. Excellent extrusion properties, high ductility, extremely low recrystallization temperature, good fatigue and creep resistance, make these alloys ideal for cable sheathing application. Though the thickness of the lead sheath is only a few hundred {mu}m, it is a critical component of the cable. The lead layer in the cable is often the limiting factor both during the cable production and during its service phase. Up to several hundred miles of long single piece cables may be required for underground and underwater cables. Cracking in the lead sheath during the cable sheathing extrusion limits the production of such long cables while cracking of the lead sheath due to repeated vibration, creep and recrystallization limits the service life of these cables. The purpose of the present research is to increase the duration of cable extrusion time without compromising sheath integrity by minimizing deleterious precipitate formation and growth. Concentrations of Cu and Te in the commercial alloy are too small to contribute to precipitation strengthening. Therefore their positive influence on mechanical strength should mainly result from the influence of Cu and Te in solution on interdiffusivity and grain boundary mobility. The formation of large precipitates observed in Pb-Cu-Te alloys can be minimized and extrusion times increased without negatively affecting mechanical properties if the solute content is reduced to near solid solubility levels. In order to examine the effect of lowering solute content on microstructural stability and mechanical properties, compressive stress-strain behavior of a Pb-50 wt ppm Cu-100 wt ppm Te alloy with solute contents close to the solubility limits and a Pb-400 wt ppm Cu-400 wt ppm Te alloy was examined at room temperature. The grain growth kinetics in these alloys were studied in a temperature range of 100 to 225 C.

Sahay, S.S.; Guruswamy, S. [Univ. of Utah, Salt Lake City, UT (United States). Dept. of Metallurgical Engineering] [Univ. of Utah, Salt Lake City, UT (United States). Dept. of Metallurgical Engineering; Goodwin, F. [International Lead Zinc Research Organization, Research Triangle Park, NC (United States)] [International Lead Zinc Research Organization, Research Triangle Park, NC (United States)

1995-04-01T23:59:59.000Z

376

Atomic scale insight into the amorphous structure of Cu doped GeTe phase-change material  

SciTech Connect (OSTI)

GeTe shows promising application as a recording material for phase-change nonvolatile memory due to its fast crystallization speed and extraordinary amorphous stability. To further improve the performance of GeTe, various transition metals, such as copper, have been doped in GeTe in recent works. However, the effect of the doped transition metals on the stability of amorphous GeTe is not known. Here, we shed light on this problem for the system of Cu doped GeTe by means of ab initio molecular dynamics calculations. Our results show that the doped Cu atoms tend to agglomerate in amorphous GeTe. Further, base on analyzing the pair correlation functions, coordination numbers and bond angle distributions, remarkable changes in the local structure of amorphous GeTe induced by Cu are obviously seen. The present work may provide some clues for understanding the effect of early transition metals on the local structure of amorphous phase-change compounds, and hence should be helpful for optimizing the structure and performance of phase-change materials by doping transition metals.

Zhang, Linchuan; Sa, Baisheng [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Zhou, Jian; Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China); Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, CAS, 200050 Shanghai (China)

2014-10-21T23:59:59.000Z

377

Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)  

SciTech Connect (OSTI)

High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 Å, ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å.) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45° ?2??2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.

Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C.; Varga, Tamas

2013-08-02T23:59:59.000Z

378

Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)  

SciTech Connect (OSTI)

High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications. Although CdTe is zinc blende with cubic lattice constant a = 6.482 Å while ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å, (001)-oriented cubic zinc blende ZnO films could be stabilized epitaxially on a CdTe (001) surface in an ?2 × ?2 R45° configuration with a lattice mismatch of <0.5%. Modeling such a configuration allows density-functional total-energy electronic-structure calculations to be performed on several interface arrangements (varying terminations and in-plane fractional translations) to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe(001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a Type II alignment as needed, for example, in solar cells. To corroborate some of these predictions, thin layers of ZnO were deposited on CdTe(001) by pulsed laser deposition, and the band alignments of the resulting heterojunctions were determined from x-ray photoelectron spectroscopy measurements. Although zinc blende ZnO could not be confirmed, the measured valence band offset (2.0–2.2 eV) matched well with the predicted value.

Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)] [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States); Varga, Tamas [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)] [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)

2013-11-15T23:59:59.000Z

379

E. P. R. CHARACTERIZATION OF p-TYPE AS GROWN AND Cl-COMPENSATED THM GROWN CdTe  

E-Print Network [OSTI]

199 E. P. R. CHARACTERIZATION OF p-TYPE AS GROWN AND Cl-COMPENSATED THM GROWN CdTe A. GOLTZENE électronique ont été observés dans du CdTe de haute résistivité, de type p ; à 4 K, on observe toujours des intense à g = 1,830 ± 0,002. Dans CdTe, fortement dopé au Cl, une raie à g = 2,003 ± 0,001 est déjà

Boyer, Edmond

380

Search for contact interactions in dimuon events from pp collisions at ?s=7 TeV with the ATLAS detector  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

A search for contact interactions has been performed using dimuon events recorded with the ATLAS detector in proton-proton collisions at ?s=7 TeV. The data sample corresponds to an integrated luminosity of 42 pb?¹. No significant deviation from the standard model is observed in the dimuon mass spectrum, allowing the following 95% C.L. limits to be set on the energy scale of contact interactions: ?>4.9 TeV (4.5 TeV) for constructive (destructive) interference in the left-left isoscalar compositeness model. These limits are the most stringent to date for ??qq contact interactions.

Aad, G.; Abbott, B.; Abdallah, J.; Abdelalim, A. A.; Abdesselam, A.; Abdinov, O.; Abi, B.; Abolins, M.; Abramowicz, H.; Abreu, H.; Acerbi, E.; Acharya, B. S.; Adams, D. L.; Addy, T. N.; Adelman, J.; Aderholz, M.; Adomeit, S.; Adragna, P.; Adye, T.; Aefsky, S.; Aguilar-Saavedra, J. A.; Aharrouche, M.; Ahlen, S. P.; Ahles, F.; Ahmad, A.; Ahsan, M.; Aielli, G.; Akdogan, T.; Åkesson, T. P. A.; Akimoto, G.; Akimov, A. V.; Akiyama, A.; Alam, M. S.; Alam, M. A.; Albrand, S.; Aleksa, M.; Aleksandrov, I. N.; Alessandria, F.; Alexa, C.; Alexander, G.; Alexandre, G.; Alexopoulos, T.; Alhroob, M.; Aliev, M.; Alimonti, G.; Alison, J.; Aliyev, M.; Allport, P. P.; Allwood-Spiers, S. E.; Almond, J.; Aloisio, A.; Alon, R.; Alonso, A.; Alviggi, M. G.; Amako, K.; Amaral, P.; Amelung, C.; Ammosov, V. V.; Amorim, A.; Amorós, G.; Amram, N.; Anastopoulos, C.; Andeen, T.; Anders, C. F.; Anderson, K. J.; Andreazza, A.; Andrei, V.; Andrieux, M-L.; Anduaga, X. S.; Angerami, A.; Anghinolfi, F.; Anjos, N.; Annovi, A.; Antonaki, A.; Antonelli, M.; Antonelli, S.; Antonov, A.; Antos, J.; Anulli, F.; Aoun, S.; Aperio Bella, L.; Apolle, R.; Arabidze, G.; Aracena, I.; Arai, Y.; Arce, A. T. H.; Archambault, J. P.; Arfaoui, S.; Arguin, J-F.; Arik, E.; Arik, M.; Armbruster, A. J.; Arnaez, O.; Arnault, C.; Artamonov, A.; Artoni, G.; Arutinov, D.; Asai, S.; Asfandiyarov, R.; Ask, S.; Åsman, B.; Asquith, L.; Assamagan, K.; Astbury, A.; Astvatsatourov, A.; Atoian, G.; Aubert, B.; Auerbach, B.; Auge, E.; Augsten, K.; Aurousseau, M.; Austin, N.; Avramidou, R.; Axen, D.; Ay, C.; Azuelos, G.; Azuma, Y.; Baak, M. A.; Baccaglioni, G.; Bacci, C.; Bach, A. M.; Bachacou, H.; Bachas, K.; Bachy, G.; Backes, M.; Backhaus, M.; Badescu, E.; Bagnaia, P.; Bahinipati, S.; Bai, Y.; Bailey, D. C.; Bain, T.; Baines, J. T.; Baker, O. K.; Baker, M. D.; Baker, S.; Baltasar Dos Santos Pedrosa, F.; Banas, E.; Banerjee, P.; Banerjee, Sw.; Banfi, D.; Bangert, A.; Bansal, V.; Bansil, H. S.; Barak, L.; Baranov, S. P.; Barashkou, A.; Barbaro Galtieri, A.; Barber, T.; Barberio, E. L.; Barberis, D.; Barbero, M.; Bardin, D. Y.; Barillari, T.; Barisonzi, M.; Barklow, T.; Barlow, N.; Barnett, B. M.; Barnett, R. M.; Baroncelli, A.; Barr, A. J.; Barreiro, F.; Barreiro Guimarães da Costa, J.; Barrillon, P.; Bartoldus, R.; Barton, A. E.; Bartsch, D.; Bartsch, V.; Bates, R. L.; Batkova, L.; Batley, J. R.; Battaglia, A.; Battistin, M.; Battistoni, G.; Bauer, F.; Bawa, H. S.; Beare, B.; Beau, T.; Beauchemin, P. H.; Beccherle, R.; Bechtle, P.; Beck, H. P.; Beckingham, M.; Becks, K. H.; Beddall, A. J.; Beddall, A.; Bedikian, S.; Bednyakov, V. A.; Bee, C. P.; Begel, M.; Behar Harpaz, S.; Behera, P. K.; Beimforde, M.; Belanger-Champagne, C.; Bell, P. J.; Bell, W. H.; Bella, G.; Bellagamba, L.; Bellina, F.; Bellomo, M.; Belloni, A.; Beloborodova, O.; Belotskiy, K.; Beltramello, O.; Ben Ami, S.; Benary, O.; Benchekroun, D.; Benchouk, C.; Bendel, M.; Benedict, B. H.; Benekos, N.; Benhammou, Y.; Benjamin, D. P.; Benoit, M.; Bensinger, J. R.; Benslama, K.; Bentvelsen, S.; Berge, D.; Bergeaas Kuutmann, E.; Berger, N.; Berghaus, F.; Berglund, E.; Beringer, J.; Bernardet, K.; Bernat, P.; Bernhard, R.; Bernius, C.; Berry, T.; Bertin, A.; Bertinelli, F.; Bertolucci, F.; Besana, M. I.; Besson, N.; Bethke, S.; Bhimji, W.; Bianchi, R. M.; Bianco, M.; Biebel, O.; Bieniek, S. P.; Biesiada, J.; Biglietti, M.; Bilokon, H.; Bindi, M.; Binet, S.; Bingul, A.; Bini, C.; Biscarat, C.; Bitenc, U.; Black, K. M.; Blair, R. E.; Blanchard, J.-B.; Blanchot, G.; Blazek, T.; Blocker, C.; Blocki, J.; Blondel, A.; Blum, W.; Blumenschein, U.; Bobbink, G. J.; Bobrovnikov, V. B.; Bocchetta, S. S.; Bocci, A.; Boddy, C. R.; Boehler, M.; Boek, J.; Boelaert, N.; Böser, S.; Bogaerts, J. A.; Bogdanchikov, A.; Bogouch, A.; Bohm, C.; Boisvert, V.; Bold, T.; Boldea, V.; Bolnet, N. M.; Bona, M.; Bondarenko, V. G.; Boonekamp, M.; Boorman, G.; Booth, C. N.; Bordoni, S.; Borer, C.; Borisov, A.; Borissov, G.; Borjanovic, I.; Borroni, S.; Bos, K.; Boscherini, D.; Bosman, M.; Boterenbrood, H.; Botterill, D.; Bouchami, J.; Boudreau, J.; Bouhova-Thacker, E. V.; Boulahouache, C.; Bourdarios, C.; Bousson, N.; Boveia, A.; Boyd, J.; Boyko, I. R.; Bozhko, N. I.; Bozovic-Jelisavcic, I.; Bracinik, J.; Braem, A.; Branchini, P.; Brandenburg, G. W.; Brandt, A.; Brandt, G.; Brandt, O.; Bratzler, U.; Brau, B.; Brau, J. E.; Braun, H. M.; Brelier, B.; Bremer, J.; Brenner, R.; Bressler, S.; Breton, D.; Britton, D.; Brochu, F. M.; Brock, I.; Brock, R.; Brodbeck, T. J.; Brodet, E.; Broggi, F.; Bromberg, C.; Brooijmans, G.; Brooks, W. K.; Brown, G.; Brown, H.; Brubaker, E.; Bruckman de Renstrom, P. A.; Bruncko, D.; Bruneliere, R.; Brunet, S.; Bruni, A.; Bruni, G.; Bruschi, M.; Buanes, T.; Bucci, F.; Buchanan, J.; Buchanan, N. J.; Buchholz, P.

2011-07-01T23:59:59.000Z

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381

Using RefWorks with BibTeX in LaTeX CREATE BiBTeX OUTPUT FOR USE WITH L  

E-Print Network [OSTI]

://cosmology.princeton.edu/cosmology/computing/PrincetonThesis.cls ~~~~~~~~~~~~~~~~~~~~~~~~ Additionally, A GOOGLE search on terms, LaTeX thesis style files will display many templates and style file a bibliography) To link filename.bib to your LA TEX document, you need to enter two commands: \\bibliographystyle search example: Stanford University latex thesis style file (suthesis-2e.sty) may be found @ URL: http

MacMillan, Andrew

382

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy  

SciTech Connect (OSTI)

CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Smith, David J. [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2012-03-19T23:59:59.000Z

383

Polycrystalline CdTe Solar Cells on Buffered Commercial TCO-Coated Glass with Efficiencies Above 15%  

SciTech Connect (OSTI)

EPIR Technologies, Inc. reports the production of thin film polycrystalline CdTe devices with National Renewable Energy Laboratory (NREL)-verified efficiencies above 15%. While previous reporting of high efficiency poly-CdTe solar cells utilized high-temperature technical glass, EPIR's cells were produced on commercially-available conductive glass. The devices exhibit fill factors up to 77% and short-circuit current densities around 24 mA/cm{sup 2}. EPIR developed a robust process for producing thin film CdTe solar cells through implementation of a high resistivity SnO{sub 2} buffer layer and optimization of the CdS window layer thickness. The effects of the high resistivity buffer layer on device performance were investigated, demonstrating improved overall performance and yield. To our knowledge, these are among the highest efficiencies yet reported and NREL-verified for a thin film CdTe solar cell fabricated using commercial conductive glass.

Banai, R.; Blissett, C.; Buurma, C.; Colegrove, E.; Bechmann, P.; Ellsworth, J.; Morley, M.; Barnes, S.; Lennon, C.; Gilmore, C.; Dhere, R.; Bergeson, J.; Scott, M.; Gessert, T.

2011-01-01T23:59:59.000Z

384

Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions (Poster)  

SciTech Connect (OSTI)

An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe PV devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

Teeter, G.; Asher, S.

2008-05-01T23:59:59.000Z

385

First Search for Multijet Resonances in root s=1.96 TeV p(p)over-bar Collisions  

E-Print Network [OSTI]

We present the first model independent search for three-jet hadronic resonances within multijet events in ?s=1.96??TeV pp? collisions at the Fermilab Tevatron using the CDF II detector. Pair production of supersymmetric ...

Bauer, Gerry P.

386

Study of hadronic event-shape variables in multijet final states in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

Event-shape variables, which are sensitive to perturbative and nonperturbative aspects of quantum chromodynamic (QCD) interactions, are studied in multijet events recorded in proton-proton collisions at ?s = 7 TeV. Events ...

Apyan, Aram

387

Dijet Azimuthal Decorrelations in pp Collisions at ?s=7? [square root of s=7]?TeV  

E-Print Network [OSTI]

Measurements of dijet azimuthal decorrelations in pp collisions at ?s=7??[square root of s=7] TeV using the CMS detector at the CERN LHC are presented. The analysis is based on an inclusive dijet event sample corresponding ...

Alver, Burak Han

388

Combined results of searches for the standard model Higgs boson in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

Combined results are reported from searches for the standard model Higgs boson in proton–proton collisions at ?s = 7 TeV in five Higgs boson decay modes: ??, bb, ?? , WW, and ZZ. The explored Higgs boson mass range is ...

Alver, B.

389

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

SciTech Connect (OSTI)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

390

Samenvatting Een cel heeft alle spelers in de cel nodig om haar taken efficint uit te kunnen voeren. Hierbij zijn  

E-Print Network [OSTI]

beschreven. De methode maakt gebruik van zogenaamde type-3 kopereiwitten (bijvoorbeeld tyrosinase en hemocyanine), die in staat zijn zuurstof te transporteren. Aan het eiwit, in de meeste gevallen tyrosinase van

van den Brink, Jeroen

391

Production of psi (2S) mesons in pp-bar collisions at 1.96 TeV  

E-Print Network [OSTI]

We have measured the differential cross section for the inclusive production of ?(2S) mesons decaying to ?[superscript +]?[superscript -] that were produced in prompt or B-decay processes from pp? collisions at 1.96 TeV. ...

Xie, Si

392

A STUDY ON SOLUTION (THM) GROWN TI DOPED CdTe F. V. WALD and R. O. BELL  

E-Print Network [OSTI]

203 A STUDY ON SOLUTION (THM) GROWN TI DOPED CdTe F. V. WALD and R. O. BELL Mobil Tyco Solar Energy might, perhaps, expect somewhat different results. The growth was carried out by THM [3] with a furnace

Boyer, Edmond

393

Microstructure, mechanical properties, and thermoelectric properties of hot-extruded p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds  

SciTech Connect (OSTI)

The p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds with Te dopant (4.0 and 6.0 wt%) and without dopant were fabricated by hot extrusion in the temperature range of 300 to 510 C under an extrusion ratio of 20:1. The undoped and Te doped compounds were highly dense and showed high crystalline quality. The grains contained many dislocations and were fine equiaxed ({approximately}1.0 {micro}m) owing to the dynamic recrystallization during the extrusion. The hot extrusion gave rise to the preferred orientation of grains. The bending strength and the figure of merit of the undoped and Te doped compounds were increased with increasing the extrusion temperature. The Te dopant significantly increased the figure of merit. The values of the figure of merit of the undoped and 4.0 wt% Te-doped compounds hot extruded at 440 C were 2.11 x 10{sup {minus}3}/K and 2.94 x 10{sup {minus}3}/K, respectively.

Park, K.; Seo, J.; Lee, C.

1997-07-01T23:59:59.000Z

394

Quantum coherent transport in SnTe topological crystalline insulator thin films  

SciTech Connect (OSTI)

Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Results of quantum coherent magnetotransport measurements reveal a multiplicity of Dirac surface states that are unique to TCI. Modeling of the weak antilocalization shows variations in the extracted number of carrier valleys that reflect the role of coherent intervalley scattering in coupling different Dirac states on the degenerate TCI surface.

Assaf, B. A.; Heiman, D. [Department of Physics, Northeastern University, Boston, Massachusetts 02115 (United States); Katmis, F.; Moodera, J. S. [Francis Bitter Magnet Laboratory, MIT, Cambridge, Massachusetts 02139 (United States); Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Wei, P. [Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Satpati, B. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Zhang, Z. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bennett, S. P.; Harris, V. G. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

2014-09-08T23:59:59.000Z

395

Synthesis and transport property of AgSbTe{sub 2} as a promising thermoelectric compound  

SciTech Connect (OSTI)

Polycrystalline AgSbTe{sub 2} ternary compound materials with high phase purity were fabricated using a combined process of mechanical alloying and spark plasma sintering. It was found that stoichiometric AgSbTe{sub 2} is a promising composition for low-and-mediate temperature applications, whose ZT reaches 1.59 at 673 K, benefiting from its extremely low thermal conductivity (0.30 W/mK) in addition to its low electrical resistivity (<1.1x10{sup -4} {omega} m) and large positive Seebeck coefficient (260 {mu}V/K). On the other hand, deviating from this formula would lead to unstable phase structures and higher thermal conductivity, which make the samples less attractive as thermoelectric materials or components of thermoelectric systems.

Wang Heng; Li Jingfeng; Zou Minmin; Sui Tao [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

2008-11-17T23:59:59.000Z

396

Synthesis of CdTe/TiO{sub 2} nanoparticles and their photocatalytic activity  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • CdTe/TiO{sub 2} photocatalysts were synthesized through a facile and convenient method. • The photosensitized degradation of RhB was largely enhanced by the composite. • Products prepared under MBSL condition exhibited higher photocatalytic activities. • The effect of MBSL had been investigated. - Abstract: Visible-light-induced CdTe/TiO{sub 2} photocatalysts were synthesized under multibubble sonoluminescence (MBSL) condition. The morphology, phase and optical properties of the products have been characterized by X-ray powder diffraction, field emission scan electron microscope, UV–vis absorption spectroscopy and photoluminescence spectroscopy. The results showed that as-prepared nanoparticles are well-crystallized with a better size distribution. In addition, the photocatalytic activities of products were evaluated using the photocatalytic degradation of rhodamine B as a probe reaction. The results showed that the products synthesized under MBSL condition exhibited higher photocatalytic activities than those without MBSL irradiation.

Li, Deliang, E-mail: lideliang@henu.edu.cn; Wang, Shijun; Wang, Jing; Zhang, Xiaodan; Liu, Shanhu

2013-10-15T23:59:59.000Z

397

Strongly confining bare core CdTe quantum dots in polymeric microdisk resonators  

SciTech Connect (OSTI)

We report on a simple route to the efficient coupling of optical emission from strongly confining bare core CdTe quantum dots (QDs) to the eigenmodes of a micro-resonator. The quantum emitters are embedded into QD/polymer sandwich microdisk cavities. This prevents photo-oxidation and yields the high dot concentration necessary to overcome Auger enhanced surface trapping of carriers. In combination with the very high cavity Q-factors, interaction of the QDs with the cavity modes in the weak coupling regime is readily observed. Under nanosecond pulsed excitation the CdTe QDs in the microdisks show lasing with a threshold energy as low as 0.33 ?J.

Flatae, Assegid, E-mail: assegid.flatae@kit.edu; Grossmann, Tobias; Beck, Torsten; Wiegele, Sarah; Kalt, Heinz [Institute of Applied Physics and DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str.1, 76131 Karlsruhe (Germany)

2014-01-01T23:59:59.000Z

398

Photoluminescence studies of type-II CdSe/CdTe superlattices  

SciTech Connect (OSTI)

CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Yin Leijun [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Skromme, B. J. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2012-08-06T23:59:59.000Z

399

Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots  

SciTech Connect (OSTI)

Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

2014-05-15T23:59:59.000Z

400

Discovery of Diffuse TeV Gamma-Ray Emission from the Galactic Plane  

E-Print Network [OSTI]

Gamma-ray emission from a narrow band at the Galactic equator has previously been detected up to 30 GeV. We report the first observation of a diffuse Galactic plane gamma-ray signal at TeV energies by Milagro, a large field of view water Cherenkov detector for extensive air showers. An excess with a significance of 4.5 sigma has been observed from the region of Galactic longitude 40 1TeV) = 5.1 +/-1.0 +/-1.7 10^{-10} cm^{-2}s^{-1} sr^{-1}$. This flux is below, but consistent with, an extrapolation of the EGRET spectrum between 1 and 30 GeV in this Galactic region.

Fleysher, R; Benbow, W; Berley, D; Blaufuss, E; Coyne, D G; De Young, T R; Dingus, B L; Dorfan, D E; Ellsworth, R W; Fleysher, L; Gisler, G; González, M M; Goodman, J A; Haines, T J; Hays, E; Hoffman, C M; Kelley, L A; Lansdell, C P; Linnemann, J T; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Noyes, D; Ryan, J M; Samuelson, F W; Saz-Parkinson, P M; Shoup, A; Sinnis, G; Smith, A J; Sullivan, G W; Williams, D A; Wilson, M E; Xu, X W; Yodh, G B

2005-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Search for Short Duration Bursts of TeV $\\gamma$ Rays with the Milagrito Telescope  

E-Print Network [OSTI]

The Milagrito water Cherenkov telescope operated for over a year. The most probable gamma-ray energy was ~1 TeV and the trigger rate was as high as 400 Hz. We have developed an efficient technique for searching the entire sky for short duration bursts of TeV photons. Such bursts may result from "traditional" gamma-ray bursts that were not in the field-of-view of any other instruments, the evaporation of primordial black holes, or some as yet undiscovered phenomenon. We have begun to search the Milagrito data set for bursts of duration 10 seconds. Here we will present the technique and the expected results. Final results will be presented at the conference.

Atkins, R; Berley, D; Chen, M L; Coyne, D G; Delay, R S; Dingus, B L; Dorfan, D E; Ellsworth, R W; Evans, D; Falcone, A D; Fleysher, L; Fleysher, R; Gisler, G; Goodman, J A; Haines, T J; Hoffman, C M; Hugenberger, S; Kelley, L A; Leonor, I; Macri, J R; McConnell, M; McCullough, J F; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Ryan, J M; Schneider, M; Shen, B; Shoup, A L; Sinnis, G; Smith, A J; Sullivan, G W; Thompson, T N; Tümer, T O; Wang, K; Wascko, M O; Westerhoff, S; Williams, D A; Yang, T; Yodh, G B

1999-01-01T23:59:59.000Z

402

Thermoelectric properties of polycrystalline In4Se3 and In4Te3  

SciTech Connect (OSTI)

High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

Shi, Xun [Optimal Inc., Plymouth, Michigan 48170, USA; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Yang, Jihui [General Motors Corporation-R& D; Wang, Hsin [Oak Ridge National Laboratory (ORNL)

2010-01-01T23:59:59.000Z

403

Identification of critical stacking faults in thin-film CdTe solar cells  

SciTech Connect (OSTI)

Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2014-08-11T23:59:59.000Z

404

Pure Gravity Mediation with m_{3/2} = 10-100TeV  

E-Print Network [OSTI]

Recently, the ATLAS and CMS collaborations reported exciting hints of a Standard Model-like Higgs boson with a mass around 125GeV. Such a Higgs boson mass can be easily obtained in the minimal supersymmetric Standard Model based on the "pure gravity mediation model" where the sfermion masses and the Higgs mass parameters are in tens to hundreds TeV range while the gauginos are in the hundreds GeV to TeV range. In this paper, we discuss detalis of the gaugino mass spectrum in the pure gravity mediation model. We also discuss the signals of the model at the current and future experiments such as cosmic ray observations and the LHC experiments. In particular, we show that the parameter space which is consistent with the thermal leptogenesis can be fully surveyed experimentally in the foreseeable future.

Masahiro Ibe; Shigeki Matsumoto; Tsutomu T. Yanagida

2012-02-10T23:59:59.000Z

405

Anti pp searches for quark-gluon plasma at TeV I  

SciTech Connect (OSTI)

Three experiments that have been approved to run at TeV I are discussed from the viewpoint of their capability to search for evidence of the QCD phase transition in proton-antiproton collisions at 1.6 TeV. One of these experiments, E-735, was proposed as a dedicated search for quark-gluon plasma effects with a detector designed to study large total E/sub T/, low P/sub T/ individual particles. The other two, E-741 (CDF) and E-740 (DO), embody general purpose four-pi detectors designed primarily to study the physics of W and Z bosons and other large P/sub T/ phenomena. The detectors and their quark-gluon plasma signals are compared. 8 refs., 6 figs., 4 tabs. (LEW)

Turkot, F.

1986-06-01T23:59:59.000Z

406

The High-Resolution Lightweight Telescope for the EUV (HiLiTE)  

SciTech Connect (OSTI)

The High-resolution Lightweight Telescope for the EUV (HiLiTE) is a Cassegrain telescope that will be made entirely of Silicon Carbide (SiC), optical substrates and metering structure alike. Using multilayer coatings, this instrument will be tuned to operate at the 465 {angstrom} Ne VII emission line, formed in solar transition region plasma at {approx}500,000 K. HiLiTE will have an aperture of 30 cm, angular resolution of {approx}0.2 arc seconds and operate at a cadence of {approx}5 seconds or less, having a mass that is about 1/4 that of one of the 20 cm aperture telescopes on the Atmospheric Imaging Assembly (AIA) instrument aboard NASA's Solar Dynamics Observatory (SDO). This new instrument technology thus serves as a path finder to a post-AIA, Explorer-class missions.

Martinez-Galarce, D S; Boerner, P; Soufli, R; De Pontieu, B; Katz, N; Title, A; Gullikson, E M; Robinson, J C; Baker, S L

2008-06-02T23:59:59.000Z

407

Prospects for observing charginos and neutralinos at a 100 TeV proton-proton collider  

E-Print Network [OSTI]

We investigate the prospects for discovering charginos and neutralinos at a future $pp$ collider with $\\sqrt{s} = 100$ TeV. We focus on models where squarks and sleptons are decoupled -- as motivated by the LHC data. Our initial study is based on models where Higgsinos form the main component of the LSP and $W$-inos compose the heavier chargino states ($M_2 > \\mu$), though it is straightforward to consider the reverse situation also. We show that in such scenarios $W$-inos decay into $W^\\pm$, $Z$ and $h$ plus neutralinos almost universally. In the $W Z$ channel we compare signal and background in various kinematical distributions. We design simple but effective signal regions for the trilepton channel and evaluate discovery reach and exclusion limits. Assuming 3000 fb$^{-1}$ of integrated luminosity, $W$-inos could be discovered (excluded) up to 1.1 (1.8) TeV if the spectrum is not compressed.

Bobby S. Acharya; Krzysztof Bozek; Chakrit Pongkitivanichkul; Kazuki Sakurai

2014-10-06T23:59:59.000Z

408

Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope  

E-Print Network [OSTI]

The Milagrito water Cherenkov telescope operated for over a year. The most probable gamma-ray energy was ~1 TeV and the trigger rate was as high as 400 Hz. We have developed an efficient technique for searching the entire sky for short duration bursts of TeV photons. Such bursts may result from "traditional" gamma-ray bursts that were not in the field-of-view of any other instruments, the evaporation of primordial black holes, or some as yet undiscovered phenomenon. We have begun to search the Milagrito data set for bursts of duration 10 seconds. Here we will present the technique and the expected results. Final results will be presented at the conference.

R. Atkins; W. Benbow; D. Berley; M. -L. Chen; D. G. Coyne; R. S. Delay; B. L. Dingus; D. E. Dorfan; R. W. Ellsworth; D. Evans; A. Falcone; L. Fleysher; R. Fleysher; G. Gisler; J. A. Goodman; T. J. Haines; C. M. Hoffman; S. Hugenberger; L. A. Kelley; I. Leonor; J. Macri; M. McConnell; J. F. McCullough; J. E. McEnery; R. S. Miller; A. I. Mincer; M. F. Morales; P. Nemethy; J. M. Ryan; M. Schneider; B. Shen; A. Shoup; G. Sinnis; A. J. Smith; G. W. Sullivan; T. N. Thompson; O. T. Tumer; K. Wang; M. O. Wascko; S. Westerhoff; D. A. Williams; T. Yang; G. B. Yodh

1999-06-24T23:59:59.000Z

409

Neutrinoless double-$?$ decay in TeV scale Left-Right symmetric models  

E-Print Network [OSTI]

In this paper we study in detail the neutrinoless double beta decay in left-right symmetric models with right-handed gauge bosons at TeV scale which is within the presently accessible reach of colliders. We discuss the different diagrams that can contribute to this process and identify the dominant ones for the case where the right-handed neutrino is also at the TeV scale. We calculate the contribution to the effective mass governing neutrinoless double beta decay assuming type-I, and type-II dominance and discuss what are the changes in the effective mass due to the additional contributions. We also discuss the effect of the recent Daya-Bay and RENO measurements on $\\sin^2\\theta_{13}$ on the effective mass in different scenarios.

Joydeep Chakrabortty; H. Zeen Devi; Srubabati Goswami; Sudhanwa Patra

2012-04-11T23:59:59.000Z

410

Search for new particles decaying to diject in 7 TeV proton-proton collisions at CMS  

SciTech Connect (OSTI)

This thesis presents a measurement of the dijet invariant mass spectrum and search for new particles decaying to dijets at CMS in 7 TeV pp collisions using data corresponding to an integrated luminosity of 2.875 pb{sup -1}. The measured dijet mass distribution is compared to QCD prediction from PYTHIA . It is required the pseudorapidity separation of the two jets to satisfy |Dh| < 1.3 with each jet inside the region of |{eta}| < 2.5. The observed dijet mass spectrum is fitted by a smooth function to search for dijet resonances. Since there is no evidence for dijet resonances, the upper limits at 95% Confidence Level (C.L.) on the resonance cross section are set. These generic cross section limits are compared with theoretical predictions for the cross section for several models of new particles: string resonances, axigluons, colorons, excited quarks, E{sub 6} diquarks, Randall-Sundrum gravitons, W' and Z'. It is excluded at 95% C.L. string resonances in the mass range 0.50 < M(S) < 2.50 TeV, excited quarks in the mass range 0.50 < M(q*) < 1.58 TeV, axigluons and colorons in the mass ranges 0.50 < M(A) < 1.17 TeV and 1.47 < M(A) < 1.52 TeV, and E{sub 6} diquarks in the mass ranges 0.50 < M(D) < 0.58 TeV, 0.97 < M(D) < 1.08 TeV, and 1.45 < M(D) < 1.60 TeV. These exclusions extend previously published limits on all models.

Ozturk, Sertac; /Cukurova U.

2011-03-01T23:59:59.000Z

411

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the Period  

E-Print Network [OSTI]

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the PeriodTe-based thin-film solar cells and on high efficiency a-Si-based thin-film solar cells. Phases I and II have the performance of a-SiGe solar cells and properties of a-SiGe single layer films with different Ge contents

Deng, Xunming

412

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Annual Technical Report for the Period  

E-Print Network [OSTI]

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Annual Technical Report for the Period solar cells and on high efficiency a-Si-based thin-film solar cells. The effort on CdTe- based materials the performance of a-SiGe solar cells and properties of a-SiGe single layer films with different Ge contents

Deng, Xunming

413

Recrystallization in CdTe/CdS A. Romeo, D.L. Batzner, H. Zogg, A.N. Tiwari*  

E-Print Network [OSTI]

¯uence on the microstructure of CdTe and photovoltaic properties. Solar cells with ef®ciency of 11.2 and 2.5% are obtainedTe/CdS photovoltaic devices have been obtained with different growth methods [1±3]. Recrys- tallization treatments. Therefore PVD grown CdS layers are used for better reliability despite of the opti- cal losses due to large

Romeo, Alessandro

414

The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1  

E-Print Network [OSTI]

, to a better p-type, to insulating, and then to n-type -- is all due to different levels of Cu involvement treatment temperature. #12;2 I. Introduction CdTe based solar panels have emerged in recent years1 The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1 , T.A. Gessert2

415

Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing  

SciTech Connect (OSTI)

In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

Albin, D.; del Cueto, J.

2011-03-01T23:59:59.000Z

416

Nanostructured Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide films produced by laser electrodispersion  

SciTech Connect (OSTI)

Amorphous nanostructured films of a complex chalcogenide (Ge{sub 2}Sb{sub 2}Te{sub 5}) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles in the structure of the films is 1.5–5 nm.

Yavsin, D. A., E-mail: yavsin@mail.ioffe.ru; Kozhevin, V. M.; Gurevich, S. A.; Yakovlev, S. A.; Melekh, B. T.; Yagovkina, M. A.; Pevtsov, A. B. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2014-12-15T23:59:59.000Z

417

Simulations of the LHC high luminosity monitors at beam energies from 3.5 TeV to 7.0 TeV  

SciTech Connect (OSTI)

We have constructed two pairs of fast ionization chambers (BRAN) for measurement and optimization of luminosity at IR1 and IR5 of the LHC. These devices are capable of monitoring the performance of the LHC at low luminosity 10{sup 28} cm{sup -2}s{sup -1} during beam commissioning all the way up to the expected full luminosity of 10{sup 34} cm{sup -2}s{sup -1} at 7.0 TeV. The ionization chambers measure the intensity of hadronic/electromagnetic showers produced by the forward neutral particles of LHC collisions. To predict and improve the understanding of the BRAN performance, we created a detailed FLUKA model of the detector and its surroundings. In this paper, we describe the model and the results of our simulations including the detector's estimated response to pp collisions at beam energies of 3.5, 5.0, and 7.0 TeV per beam. In addition, these simulations show the sensitivity of the BRAN to the crossing angle of the two LHC beams. It is shown that the BRAN sensitivity to the crossing angle is proportional to the measurement of crossing angle by the LHC beam position monitors.

Matis, H.S.; Miyamoto, R.; Humphreys, P.; Ratti, A.; Turner, W.C.; Stiller, J.

2011-03-28T23:59:59.000Z

418

Measurement of the underlying event activity at the LHC with $ \\sqrt {s} = 7 $ TeV and comparison with $ \\sqrt {s} = 0.9 $ TeV  

SciTech Connect (OSTI)

A measurement of the underlying activity in scattering processes with a hard scale in the several GeV region is performed in proton-proton collisions at sqrt(s) = 0.9 and 7 TeV, using data collected by the CMS experiment at the LHC. The production of charged particles with pseudorapidity |eta| < 2 and transverse momentum pT > 0.5 GeV/c is studied in the azimuthal region transverse to that of the leading set of charged particles forming a track-jet. A significant growth of the average multiplicity and scalar-pT sum of the particles in the transverse region is observed with increasing pT of the leading track-jet, followed by a much slower rise above a few GeV/c. For track-jet pT larger than a few GeV/c, the activity in the transverse region is approximately doubled with a centre-of-mass energy increase from 0.9 to 7 TeV. Predictions of several QCD-inspired models as implemented in PYTHIA are compared to the data.

Chatrchyan, Serguei; et al.

2011-09-01T23:59:59.000Z

419

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

R Gul; A Bolotnikov; H Kim; R Rodriguez; K Keeter; Z Li; G Gu; R James

2011-12-31T23:59:59.000Z

420

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

Gul, R.; Bolotnikov, A.; Kim, H.K.; Rodriguez, R.; Keeter, K.; Li, Z.; Gu, G.; and James, R.B.

2011-02-02T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

HRLEED and STM study of misoriented Si(100) with and without a Te overlayer  

SciTech Connect (OSTI)

The growth of high quality Te on misoriented Si(100) is important as an intermediate phase for epitaxial growth of CdTe. The misorientation angle plays a key role in the growth quality of CdTe/Si(100); this incited the curiosity to investigate the effect of the misorientation angle on the topography of the surface structure of Si(100). The main goal is to show the relation between the misorientation angle, the terrace width and the step height distributions. HRLEED (High Resolution Low Energy Electron Diffraction) provides information in reciprocal space while STM gives real space topographic images of the surface structure. STM and HRLEED measurements were performed on Si(100) with misorientation angle {var_theta} = 0.5{degree}, 1.5{degree} and 8{degree} towards the [110] direction and {var_theta} = 4{degree} towards the [130] direction. Except for the 8{degree} misorientation in which case a regular step array with diatomic step height was observed, for the other misorientations the terrace width was variable. The average terrace width decreased with increasing misorientation angle. A mixture of diatomic and monatomic step heights was observed on the 0.5{degree} and 1.5{degree} misoriented Si(100) samples. It proves that one can not assume purely monatomic step height for low misorientation angles. The results do not agree with the belief that at low miscut angle A and B terraces are equal and that as the misorientation angle increases the B terrace tends to be wider than the A terrace. In fact, pairing of terraces was not observed at all. Te was deposited at a substrate temperature of 200 C. The authors observed a significant reduction in the terrace widths for all miscut angles.

Yala, S.; Montano, P.A. [Argonne National Lab., IL (United States). Materials Science Div.]|[Univ. of Illinois, Chicago, IL (United States). Dept. of Physics

1996-12-01T23:59:59.000Z

422

First Results from a Search for TeV Emission from BL Lacs  

E-Print Network [OSTI]

Two active galactic nuclei have been detected at TeV energies using the atmospheric Cherenkov imaging technique. The Whipple Observatory gamma-ray telescope has been used to observe all the BL Lacertae objects in the northern hemisphere out to a redshift of 0.1. We report the tentative detection of VHE emission from a third BL Lac object, 1ES 2344+514. Progress in extending this survey out to z=0.2 will also be reported.

M. Catanese; P. J. Boyle; J. H. Buckley; A. M. Burdett; J. Bussons Gordo; D. A. Carter-Lewis; M. F. Cawley; D. J. Fegan; J. P. Finley; J. A. Gaidos; A. M. Hillas; F. Krennrich; R. C. Lamb; R. W. Lessard; C. Masterson; J. E. McEnery; G. Mohanty; J. Quinn; A. J. Rodgers; H. J. Rose; F. W. Samuelson; G. H. Sembroski; R. Srinivasan; T. C. Weekes; J. Zweerink

1997-06-13T23:59:59.000Z

423

ATLAS Sensitivity to Left-Right Symmetry at 7 TeV Kirill Skovpen  

E-Print Network [OSTI]

ATLAS Sensitivity to Left-Right Symmetry at 7 TeV Kirill Skovpen 13th ISTC SAC Seminar "New of Nuclear Physics (BINP) on behalf of the LRSM analysis group of ATLAS Exotics/Lepton+X: #12;Messengers;ATLAS detector layout 8Kirill Skovpen - ISTC SAC Seminar 20102010-09-03 #12;¯Q ¯Q q q WR e, µ e, µ Nl W

424

Beauty production cross section measurements at E(cm) = 1.96-TeV  

SciTech Connect (OSTI)

The RunII physics program at the Tevatron started in spring 2001 with protons and antiprotons colliding at an energy of {radical}s = 1.96 TeV, and it is carrying on with more than 500 pb{sup -1} of data as collected by both the CDF and D0 experiments. Recent results on beauty production cross section measurements are here reported.

D'Onofrio, Monica; /Geneva U.

2005-05-01T23:59:59.000Z

425

Thermographic analyses of the growth of Cd1-xZnxTe single crystals  

SciTech Connect (OSTI)

Bulk Cd1-xZnxTe (0

Kopach, O.V.; Bolotnikov, A.; Shcherbak, Larysa P.; Fochuk, Petro M.; and James, Ralph B.

2010-08-01T23:59:59.000Z

426

GeV-TeV and X-ray flares from gamma-ray bursts  

E-Print Network [OSTI]

The recent detection of delayed X-ray flares during the afterglow phase of gamma-ray bursts (GRBs) suggests an inner-engine origin, at radii inside the deceleration radius characterizing the beginning of the forward shock afterglow emission. Given the observed temporal overlapping between the flares and afterglows, there must be inverse Compton (IC) emission arising from such flare photons scattered by forward shock afterglow electrons. We find that this IC emission produces GeV-TeV flares, which may be detected by GLAST and ground-based TeV telescopes. We speculate that this kind of emission may already have been detected by EGRET from a very strong burst--GRB940217. The enhanced cooling of the forward shock electrons by the X-ray flare photons may suppress the synchrotron emission of the afterglows during the flare period. The detection of GeV-TeV flares combined with low energy observations may help to constrain the poorly known magnetic field in afterglow shocks. We also consider the self-IC emission in the context of internal-shock and external-shock models for X-ray flares. The emission above GeV from internal shocks is low, while the external shock model can also produce GeV-TeV flares, but with a different temporal behavior from that caused by IC scattering of flare photons by afterglow electrons. This suggests a useful approach for distinguishing whether X-ray flares originate from late central engine activity or from external shocks.

Xiang-Yu Wang; Zhuo Li; Peter Meszaros

2006-03-13T23:59:59.000Z

427

Electroweak 2 -> 2 amplitudes for electron-positron annihilation at TeV energies  

E-Print Network [OSTI]

The non-radiative scattering amplitudes for electron-positron annihilation into quark and lepton pairs in the TeV energy range are calculated in the double-logarithmic approximation. The expressions for the amplitudes are obtained using infrared evolution equations with different cut-offs for virtual photons and for W and Z bosons, and compared with previous results obtained with an universal cut-off.

A. Barroso; B. I. Ermolaev; M. Greco; S. M. Oliveira; S. I. Troyan

2003-11-26T23:59:59.000Z

428

Religio e TeRRiTRio no BRasil: 1991/2010  

E-Print Network [OSTI]

Religião e TeRRiTóRio no BRasil: 1991/2010 Cesar Romero Jacob Dora Rodrigues Hees Philippe Waniez. Jacob, Cesar Romero Religião e território no Brasil [recurso eletrônico] : 1991/2010 / Cesar Romero.) ; 21 cm Inclui bibliografia ISBN 978-85-8006-100-0 1. Religiões - Indicadores - Brasil. 2. Indicadores

429

Electron scattering by acceptor centers in p-Ag{sub 2}Te at low temperatures  

SciTech Connect (OSTI)

Resonant electron scattering in p-Ag{sub 2}Te at acceptor concentrations N{sub a} < 4.2 x 10{sup 16} cm{sup -3} has been observed in the temperature range of 50-80 K. The contribution of the resonant scattering to the temperature dependences of the conductivity {sigma}(T) and thermopower {alpha}{sub 0}(T) has been calculated. It is shown that this contribution exceeds that of charge carrier scattering by acoustic phonons.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B.; Askerova, G. Z. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Gojaev, E. M. [Azerbaijan Technical University (Azerbaijan)

2010-08-15T23:59:59.000Z

430

582014-15 Suggested Course Plan CompuTeR sCIenCe  

E-Print Network [OSTI]

Algebra & Diff. Equations EE 364: Intro to Probability & Statistics or mATh 407: Probability Theory sCIenCe582014-15 Suggested Course Plan CompuTeR sCIenCe FIRST YEAR FALL: 16 units SPRING: 16 units SECOND104L,170 4 BASIC SCIENCE I 4 TECH. ELECTIVE I 4 TECH. ELECTIVE II 4 EE 364 MATH225or245 or MATH 407

Zhou, Chongwu

431

Les Houches 2013: Physics at TeV Colliders: New Physics Working Group Report  

E-Print Network [OSTI]

We present the activities of the "New Physics" working group for the "Physics at TeV Colliders" workshop (Les Houches, France, 3--21 June, 2013). Our report includes new computational tool developments, studies of the implications of the Higgs boson discovery on new physics, important signatures for searches for natural new physics at the LHC, new studies of flavour aspects of new physics, and assessments of the interplay between direct dark matter searches and the LHC.

G. Brooijmans; R. Contino; B. Fuks; F. Moortgat; P. Richardson; S. Sekmen; A. Weiler; A. Alloul; A. Arbey; J. Baglio; D. Barducci; A. J. Barr; L. Basso; M. Battaglia; G. Bélanger; A. Belyaev; J. Bernon; A. Bharucha; O. Bondu; F. Boudjema; E. Boos; M. Buchkremer; V. Bunichev; G. Cacciapaglia; G. Chalons; E. Conte; M. J. Dolan; A. Deandrea; K. De Causmaecker; A. Djouadi; B. Dumont; J. Ellis; C. Englert; A. Falkowski; S. Fichet; T. Flacke; A. Gaz; M. Ghezzi; R. Godbole; A. Goudelis; M. Gouzevitch; D. Greco; R. Grober; C. Grojean; D. Guadagnoli; J. F. Gunion; B. Herrmann; J. Kalinowski; J. H. Kim; S. Kraml; M. E. Krauss; S. Kulkarni; S. J. Lee; S. H. Lim; D. Liu; F. Mahmoudi; Y. Maravin; A. Massironi; L. Mitzka; K. Mohan; G. Moreau; M. M. Mühlleitner; D. T. Nhung; B. O'Leary; A. Oliveira; L. Panizzi; D. Pappadopulo; S. Pataraia; W. Porod; A. Pukhov; F. Riva; J. Rojo; R. Rosenfeld; J. Ruiz-Álvarez; H. Rzehak; V. Sanz; D. Sengupta; M. Spannowsky; M. Spira; J. Streicher; N. Strobbe; A. Thamm; M. Thomas; R. Torre; W. Waltenberger; K. Walz; A. Wilcock; A. Wulzer; F. Würthwein; C. Wymant

2014-05-07T23:59:59.000Z

432

High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices  

E-Print Network [OSTI]

We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was ob...

Watanabe, Shin; Aono, Hiroyuki; Takeda, Shin'ichiro; Odaka, Hirokazu; Kokubun, Motohide; Takahashi, Tadayuki; Nakazawa, Kazuhiro; Tajima, Hiroyasu; Onishi, Mitsunobu; Kuroda, Yoshikatsu

2008-01-01T23:59:59.000Z

433

Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer's thickness  

SciTech Connect (OSTI)

On the basis of the continuity equation, the spatial distribution of photogenerated excess electrons in the neutral region of the CdTe layer in a CdS/CdTe heterostructure is analyzed taking into account recombination at the rear surface of the layer. It is demonstrated that, owing to diffusion, excess electrons penetrate deep into the CdTe layer at distances far exceeding the effective penetration length for solar radiation. Calculations of the short-circuit current indicate that, for electron lifetimes of 10{sup -10}-10{sup -9} s, typical of thin-film CdS/CdTe solar cells, recombination losses are insignificant if the CdTe layer's thickness amounts to 3-4 {mu}m but increase dramatically if the thickness is below 1-1.5 {mu}m. In order to eliminate recombination losses in more efficient solar cells where the electron lifetime is {>=}10{sup -8} s the absorbing CdTe layer needs to be much thicker.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Savchuk, A. I.; Grushko, E. V. [Chernivtsi National University (Ukraine)

2009-08-15T23:59:59.000Z

434

Atomistic simulation of CdTe solid-liquid coexistence equilibria  

SciTech Connect (OSTI)

Atomistic simulations of CdTe using a Stillinger-Weber (S-W) interatomic potential were undertaken to model the solid-liquid phase equilibria of this important compound semiconductor. Although this potential has been used by others to study liquid CdTe and vapor-liquid interface, it is based on fitting parameters optimized only for the zincblende solid. It has not been fully explored as a potential for solid-liquid phase equilibria until this work. This research reports an accurate determination of the melting temperature, TM=1305K near P=0, the heat of fusion at melting and as a function of temperature up to 1700K, and on the relative phase densities with a particular emphasis on the melting line. The S-W potential for CdTe predicts a liquid with a density slightly less than that of the solid and, hence, the pressure-temperature melting line has a positive slope. The pair correlation structure of the liquid is determined and favorably compared to neutron scattering data. The liquid-solid interface is discussed using density profiles and a short-range order parameter for models having principal orientations along <100>, <110>, and <111> crystallographic directions.

Henager, Charles H.; Morris, James R.

2009-12-07T23:59:59.000Z

435

HAWC (High Altitude Water Cherenkov) Observatory for Surveying the TeV Sky  

SciTech Connect (OSTI)

The HAWC observatory is a proposed, large field of view ({approx}2 sr), high duty cycle (>95%) TeV gamma-ray detector which uses a large pond of water (150 m x 150 m) located at 4300 m elevation. The pond contains 900 photomultiplier tubes (PMTs) to observe the relativistic particles and secondary gamma lays in extensive air showers. This technique has been used successfully by the Milagro observatory to detect known, as well as new, TeV sources. The PMTs and much of the data acquisition system of Milagro will be reused for HAWC, resulting in a cost effective detector ({approx}6M$) that can be built quickly in 2-3 years. The improvements of HAWC will result in {approx}15 times the sensitivity of Milagro. HAWC will survey 2{pi} sr of the sky every day with a sensitivity of the Crab flux at a median energy of 1 TeV. After five years of operation half of the sky will be surveyed to 20 mCrab. This sensitivity will likely result in the discovery of new sources as well as allow the identification of which GLAST sources extend to higher energies.

Dingus, Brenda L. [Los Alamos National Lab, Los Alamos, NM 87545 (United States)

2007-07-12T23:59:59.000Z

436

First Results of a Study of TeV Emission from GRBs in Milagrito  

E-Print Network [OSTI]

Milagrito, a detector sensitive to gamma-rays at TeV energies, monitored the northern sky during the period February 1997 through May 1998. With a large field of view and high duty cycle, this instrument was used to perform a search for TeV counterparts to gamma-ray bursts. Within the Milagrito field of view 54 gamma-ray bursts at keV energies were observed by the Burst And Transient Satellite Experiment (BATSE) aboard the Compton Gamma-Ray Observatory. This paper describes the results of a preliminary analysis to search for TeV emission correlated with BATSE detected bursts. Milagrito detected an excess of events coincident both spatially and temporally with GRB 970417a, with chance probability $2.8 \\times 10^{-5}$ within the BATSE error radius. No other significant correlations were detected. Since 54 bursts were examined the chance probability of observing an excess with this significance in any of these bursts is $1.5 \\times 10^{-3}$. The statistical aspects and physical implications of this result are di...

McEnery, J E; Benbow, W; Berley, D; Chen, M L; Coyne, D G; Dingus, B L; Dorfan, D E; Ellsworth, R W; Evans, D; Falcone, A D; Fleysher, L; Fleysher, R; Gisler, G; Goodman, J A; Haines, T J; Hoffman, C M; Hugenberger, S; Kelley, L A; Leonor, I; McConnell, M; McCullough, J F; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Ryan, J M; Shen, B; Shoup, A L; Sinnis, C; Smith, A J; Sullivan, G W; Tümer, T O; Wang, K; Wascko, M O; Westerhoff, S; Williams, D A; Yang, T; Yodh, G B

1999-01-01T23:59:59.000Z

437

Milagro Observations of TeV Emission from Galactic Sources in the Fermi Bright Source List  

E-Print Network [OSTI]

We present the result of a search of Milagro sky map for spatial correlations with sources from a subset of the recent Fermi Bright Source List (BSL). The BSL consists of the 205 most significant sources detected above 100 MeV by the Fermi Large Area Telescope. We select sources based on their categorization in the BSL, taking all confirmed or possible Galactic sources in the field of view of Milagro. Of the 34 Fermi sources selected, 14 are observed by Milagro at a significance of 3 standard deviations or more. We conduct this search with a new analysis which employs newly-optimized gamma-hadron separation and utilizes the full 8-year Milagro dataset. Milagro is sensitive to gamma rays above 1 TeV and these results extend the observation of these sources far above the Fermi energy band. With the new analysis and additional data, TeV emission is definitively observed associated with the Fermi pulsar J2229.0+6114, in the the Boomerang Pulsar Wind Nebula (PWN). Furthermore, an extended region of TeV emission is...

Abdo, A A; Aune, T; Berley, D; Chen, C; Christopher, G E; DeYoung, T; Dingus, B L; Ellsworth, R W; González, M M; Goodman, J A; Hays, E; Hoffman, C M; Huentemeyer, P H; Kolterman, B E; Linnemann, J T; McEnery, J E; Morgan, T; Mincer, A I; Némethy, P; Pretz, J; Ryan, J M; Parkinson, P M Saz; Shoup, A; Sinnis, G; Smith, A J; Vasileiou, V; Walker, G P; Williams, D A; Yodh, G B

2009-01-01T23:59:59.000Z

438

TeV Gamma-Ray Sources from a Survey of the Galactic Plane with Milagro  

E-Print Network [OSTI]

A survey of Galactic gamma-ray sources at a median energy of ~20 TeV has been performed using the Milagro Gamma Ray Observatory. Eight candidate sources of TeV emission are detected with pre-trials significance $>4.5\\sigma$ in the region of Galactic longitude $l\\in[30^\\circ,220^\\circ]$ and latitude $b\\in[-10^\\circ,10^\\circ]$. Four of these sources, including the Crab nebula and the recently published MGRO J2019+37, are observed with significances $>4\\sigma$ after accounting for the trials involved in searching the 3800 square degree region. All four of these sources are also coincident with EGRET sources. Two of the lower significance sources are coincident with EGRET sources and one of these sources is Geminga. The other two candidates are in the Cygnus region of the Galaxy. Several of the sources appear to be spatially extended. The fluxes of the sources at 20 TeV range from ~25% of the Crab flux to nearly as bright as the Crab.

Abdo, A A; Berley, D; Casanova, S; Chen, C; Coyne, D G; Dingus, B L; Ellsworth, R W; Fleysher, L; Fleysher, R; González, M M; Goodman, J A; Hays, E; Hoffman, C M; Hopper, B; Huntemeyer, P H; Kolterman, B E; Lansdell, C P; Linnemann, J T; McEnery, J E; Mincer, A I; Noyes, D; Némethy, P; Parkinson, P M Saz; Ryan, J M; Shoup, A; Sinnis, G; Smith, A J; Sullivan, G W; Vasileiou, V; Walker, G P; Williams, D A; Xu, X W; Yodh, G B

2007-01-01T23:59:59.000Z

439

On the formation of TeV radiation in LS 5039  

E-Print Network [OSTI]

The recent detections of TeV gamma-rays from compact binary systems show that relativistic outflows (jets or winds) are sites of effective acceleration of particles up to multi-TeV energies. In this paper, we discuss the conditions of acceleration and radiation of ultra-relativistic electrons in LS 5039, currently the binary system emitting gamma-rays with the highest quality data in the TeV range. Assuming that the gamma-ray emitter is a jet-like structure, we performed detailed numerical calculations of the energy spectrum and lightcurves accounting for the acceleration efficiency, the location of the accelerator, the speed of the emitting flow, the inclination angle of the system, as well as specific features related to anisotropic inverse Compton scattering and pair production. We conclude that the accelerator should not be deep inside the binary system unless we assume a very efficient acceleration rate. We show that within the IC scenario both the gamma-ray spectrum and flux are strongly orbital phase d...

Khangulyan, Dmitry; Bosch-Ramon, Valenti

2007-01-01T23:59:59.000Z

440

On the formation of TeV radiation in LS 5039  

E-Print Network [OSTI]

The recent detections of TeV gamma-rays from compact binary systems show that relativistic outflows (jets or winds) are sites of effective acceleration of particles up to multi-TeV energies. In this paper, we discuss the conditions of acceleration and radiation of ultra-relativistic electrons in LS 5039, the gamma-ray emitting binary system for which the highest quality TeV data are available. Assuming that the gamma-ray emitter is a jet-like structure, we performed detailed numerical calculations of the energy spectrum and lightcurves accounting for the acceleration efficiency, the location of the accelerator, the speed of the emitting flow, the inclination angle of the system, as well as specific features related to anisotropic inverse Compton scattering and pair production. We conclude that the accelerator should not be deep inside the binary system unless we assume a very efficient acceleration rate. We show that within the IC scenario both the gamma-ray spectrum and flux are strongly orbital phase dependent. Formally, our model can reproduce, for specific sets of parameter values, the energy spectrum of gamma-rays reported by HESS for wide orbital phase intervals. However, the physical properties of the source can be constrained only by observations capable of providing detailed energy spectra for narrow orbital phase intervals ($\\Delta\\phi\\ll 0.1$).

Dmitry Khangulyan; Felix Aharonian; Valenti Bosch-Ramon

2007-10-10T23:59:59.000Z

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441

Investigation of Cd1-XMgxTe Alloys for Tandem Solar Cell Applications: Preprint  

SciTech Connect (OSTI)

Theoretical modeling of two-junction tandem solar cells shows that for optimal device performance, the bandgap of the top cell should be in the range of 1.6 to 1.8 eV. Cd1-xMgxTe (CMT) alloys have a lattice constant close to that of CdTe, and the addition of a small amount of Mg changes the bandgap considerably. In this paper, we present our work on developing CMT for solar cell applications. CMT films were prepared by vacuum deposition with co-evaporation of CdTe and Mg on substrates heated to 300-400 C. Films with a composition in the range of x = 0 to 0.66 were fabricated, and optical analysis of the films showed that the bandgap of the samples ranged from 1.5 to 2.3 eV and varied linearly with composition. For the fabrication of devices using these alloy films, we also investigated the effect of post-deposition CdCl2 heat treatment. We have investigated junctions between CdS and CMT alloys in the bandgap range of 1.5 to 1.8 eV for tandem cell applications. We have also worked on the ohmic contacts to the CMT alloy films using Cu/Au bilayers, and the preliminary data shows a significant effect of the contact processing on the device performance.

Dhere, R.; Ramanathan, K.; Scharf, J.; Moutinho, H.; To, B.; Duda, A.; Noufi, R.

2006-05-01T23:59:59.000Z

442

First Results of a Study of TeV Emission from GRBs in Milagrito  

E-Print Network [OSTI]

Milagrito, a detector sensitive to gamma-rays at TeV energies, monitored the northern sky during the period February 1997 through May 1998. With a large field of view and high duty cycle, this instrument was used to perform a search for TeV counterparts to gamma-ray bursts. Within the Milagrito field of view 54 gamma-ray bursts at keV energies were observed by the Burst And Transient Satellite Experiment (BATSE) aboard the Compton Gamma-Ray Observatory. This paper describes the results of a preliminary analysis to search for TeV emission correlated with BATSE detected bursts. Milagrito detected an excess of events coincident both spatially and temporally with GRB 970417a, with chance probability $2.8 \\times 10^{-5}$ within the BATSE error radius. No other significant correlations were detected. Since 54 bursts were examined the chance probability of observing an excess with this significance in any of these bursts is $1.5 \\times 10^{-3}$. The statistical aspects and physical implications of this result are discussed.

J. E. McEnery; R. Atkins; W. Benbow; D. Berley; M. L. Chen; D. G. Coyne; B. L. Dingus; D. E. Dorfan; R. W. Ellsworth; D. Evans; A. Falcone; L. Fleysher; R. Fleysher; G. Gisler; J. A. Goodman; T. J. Haines; C. M. Hoffman; S. Hugenberger; L. A. Kelley; I. Leonor; M. McConnell; J. F. McCullough; R. S. Miller; A. I. Mincer; M. F. Morales; P. Nemethy; J. M. Ryan; B. Shen; A. Shoup; C. Sinnis; A. J. Smith; G. W. Sullivan; T. Tumer; K. Wang; M. O. Wascko; S. Westerhoff; D. A. Williams; T. Yang; G. B. Yodh

1999-10-29T23:59:59.000Z

443

TeV Gamma-Ray Sources from a Survey of the Galactic Plane with Milagro  

E-Print Network [OSTI]

A survey of Galactic gamma-ray sources at a median energy of ~20 TeV has been performed using the Milagro Gamma Ray Observatory. Eight candidate sources of TeV emission are detected with pre-trials significance $>4.5\\sigma$ in the region of Galactic longitude $l\\in[30^\\circ,220^\\circ]$ and latitude $b\\in[-10^\\circ,10^\\circ]$. Four of these sources, including the Crab nebula and the recently published MGRO J2019+37, are observed with significances $>4\\sigma$ after accounting for the trials involved in searching the 3800 square degree region. All four of these sources are also coincident with EGRET sources. Two of the lower significance sources are coincident with EGRET sources and one of these sources is Geminga. The other two candidates are in the Cygnus region of the Galaxy. Several of the sources appear to be spatially extended. The fluxes of the sources at 20 TeV range from ~25% of the Crab flux to nearly as bright as the Crab.

A. A. Abdo; B. Allen; D. Berley; S. Casanova; C. Chen; D. G. Coyne; B. L. Dingus; R. W. Ellsworth; L. Fleysher; R. Fleysher; M. M. Gonzalez; J. A. Goodman; E. Hays; C. M. Hoffman; B. Hopper; P. H. Huntemeyer; B. E. Kolterman; C. P. Lansdell; J. T. Linnemann; J. E. McEnery; A. I. Mincer; P. Nemethy; D. Noyes; J. M. Ryan; P. M. Saz Parkinson; A. Shoup; G. Sinnis; A. J. Smith; G. W. Sullivan; V. Vasileiou; G. P. Walker; D. A. Williams; X. W. Xu; G. B. Yodh

2007-05-04T23:59:59.000Z

444

Resonant nature of intrinsic defect energy levels in PbTe revealed by infrared photoreflectance spectroscopy  

SciTech Connect (OSTI)

Step-scan Fourier-transform infrared photoreflectance and modulated photoluminescence spectroscopy were used to characterize the optical transitions of the epitaxial PbTe thin film grown by molecular beam epitaxy on BaF{sub 2} (111) substrate in the vicinity of energy gap of lead telluride at 77?K. It is found that the intrinsic defect energy levels in the electronic structure are of resonant nature. The Te-vacancy energy level is located above the conduction band minimum by 29.1?meV. Another defect (V{sub X}) energy level situated below valance band maximum by 18.1?meV is also revealed. Whether it is associated with the Pb vacancy is still not clear. It might also be related to the misfit dislocations stemming from the lattice mismatch between PbTe and BaF{sub 2} substrate. The experimental results support the theory prediction (N. J. Parada and G. W. Pratt, Jr., Phys. Rev. Lett. 22, 180 (1969), N. J. Parada, Phys. Rev. B 3, 2042 (1971)) and are consistent with the reported Hall experimental results (G. Bauer, H. Burkhard, H. Heinrich, and A. Lopez-Otero, J. Appl. Phys. 47, 1721 (1976)).

Zhang, Bingpo; Cai, Chunfeng; Jin, Shuqiang; Ye, Zhenyu; Wu, Huizhen, E-mail: hzwu@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Qi, Zhen [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

2014-07-14T23:59:59.000Z

445

Conductivity anisotropy in the doped Bi{sub 2}Te{sub 3} single crystals  

SciTech Connect (OSTI)

Temperature dependences (temperature range T = 0.5-300 K) of resistivity in the plane of layers and in the direction perpendicular to the layers, and the galvanomagnetic effects in undoped and doped Bi{sub 2}Te{sub 3} single crystals are studied (magnetic field H < 80 kOe, T = 0.5-4.2 K). It is shown that upon doping of Bi{sub 2}Te{sub 3} with the Group III atoms (In and B), conductivity anisotropy increases mainly due to an increase in resistivity in the direction perpendicular to the layers. This fact makes it possible to assume that the atoms of these impurities are incorporated mainly into the van der Waal gaps between the layers upon doping. It is also revealed that, upon doping of Bi{sub 2}Te{sub 3} with In and B, the temperature dependence of conductivity becomes weaker, which indicates an increase in the role of scattering by defects in scattering mechanisms. The concentrations and mobilities of charge carriers, values of the Hall factor conditioned by the anisotropy of effective masses and orientation of ellipsoids with respect to crystallographic axes, areas of the extreme section of the Fermi surface by the plane perpendicular to the direction of the magnetic field, and the Fermi energy are evaluated.

Abdullaev, N. A., E-mail: anadir@azintex.com; Kakhramanov, S. Sh.; Kerimova, T. G.; Mustafayeva, K. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Nemov, S. A. [St. Petersburg State Polytechnical University (Russian Federation)

2009-02-15T23:59:59.000Z

446

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics  

SciTech Connect (OSTI)

Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band offset of -0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, likely due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices.

Kaspar, Tiffany C.; Droubay, Timothy C.; Jaffe, John E.

2011-12-28T23:59:59.000Z

447

Charged-particle multiplicity measurement in proton-proton collisions at sqrt(s) = 7 TeV with ALICE at LHC  

E-Print Network [OSTI]

The pseudorapidity density and multiplicity distribution of charged particles produced in proton-proton collisions at the LHC, at a centre-of-mass energy sqrt(s) = 7 TeV, were measured in the central pseudorapidity region |eta| < 1. Comparisons are made with previous measurements at sqrt(s) = 0.9 TeV and 2.36 TeV. At sqrt(s) = 7 TeV, for events with at least one charged particle in |eta| < 1, we obtain dNch/deta = 6.01 +- 0.01 (stat.) +0.20 -0.12 (syst.). This corresponds to an increase of 57.6% +- 0.4% (stat.) +3.6 -1.8% (syst.) relative to collisions at 0.9 TeV, significantly higher than calculations from commonly used models. The multiplicity distribution at 7 TeV is described fairly well by the negative binomial distribution.

K. Aamodt; N. Abel; U. Abeysekara; A. Abrahantes Quintana; A. Abramyan; D. Adamova; M. M. Aggarwal; G. Aglieri Rinella; A. G. Agocs; S. Aguilar Salazar; Z. Ahammed; A. Ahmad; N. Ahmad; S. U. Ahn; R. Akimoto; A. Akindinov; D. Aleksandrov; B. Alessandro; R. Alfaro Molina; A. Alici; E. Almaraz Avina; J. Alme; T. Alt; V. Altini; S. Altinpinar; C. Andrei; A. Andronic; G. Anelli; V. Angelov; C. Anson; T. Anticic; F. Antinori; S. Antinori; K. Antipin; D. Antonczyk; P. Antonioli; A. Anzo; L. Aphecetche; H. Appelshauser; S. Arcelli; R. Arceo; A. Arend; N. Armesto; R. Arnaldi; T. Aronsson; I. C. Arsene; A. Asryan; A. Augustinus; R. Averbeck; T. C. Awes; J. Aysto; M. D. Azmi; S. Bablok; M. Bach; A. Badala; Y. W. Baek; S. Bagnasco; R. Bailhache; R. Bala; A. Baldisseri; A. Baldit; J. Ban; R. Barbera; G. G. Barnafoldi; L. Barnby; V. Barret; J. Bartke; F. Barile; M. Basile; V. Basmanov; N. Bastid; B. Bathen; G. Batigne; B. Batyunya; C. Baumann; I. G. Bearden; B. Becker; I. Belikov; R. Bellwied; E. Belmont-Moreno; A. Belogianni; L. Benhabib; S. Beole; I. Berceanu; A. Bercuci; E. Berdermann; Y. Berdnikov; L. Betev; A. Bhasin; A. K. Bhati; L. Bianchi; N. Bianchi; C. Bianchin; J. Bielcik; J. Bielcikova; A. Bilandzic; L. Bimbot; E. Biolcati; A. Blanc; F. Blanco; F. Blanco; D. Blau; C. Blume; M. Boccioli; N. Bock; A. Bogdanov; H. Boggild; M. Bogolyubsky; J. Bohm; L. Boldizsar; M. Bombara; C. Bombonati; M. Bondila; H. Borel; V. Borshchov; A. Borisov; C. Bortolin; S. Bose; L. Bosisio; F. Bossu; M. Botje; S. Bottger; G. Bourdaud; B. Boyer; M. Braun; P. Braun-Munzinger; L. Bravina; M. Bregant; T. Breitner; G. Bruckner; R. Brun; E. Bruna; G. E. Bruno; D. Budnikov; H. Buesching; P. Buncic; O. Busch; Z. Buthelezi; D. Caffarri; X. Cai; H. Caines; E. Camacho; P. Camerini; M. Campbell; V. Canoa Roman; G. P. Capitani; G. Cara Romeo; F. Carena; W. Carena; F. Carminati; A. Casanova Diaz; M. Caselle; J. Castillo Castellanos; J. F. Castillo Hernandez; V. Catanescu; E. Cattaruzza; C. Cavicchioli; P. Cerello; V. Chambert; B. Chang; S. Chapeland; A. Charpy; J. L. Charvet; S. Chattopadhyay; S. Chattopadhyay; M. Cherney; C. Cheshkov; B. Cheynis; E. Chiavassa; V. Chibante Barroso; D. D. Chinellato; P. Chochula; K. Choi; M. Chojnacki; P. Christakoglou; C. H. Christensen; P. Christiansen; T. Chujo; F. Chuman; C. Cicalo; L. Cifarelli; F. Cindolo; J. Cleymans; O. Cobanoglu; J. -P. Coffin; S. Coli; A. Colla; G. Conesa Balbastre; Z. Conesa del Valle; E. S. Conner; P. Constantin; G. Contin; J. G. Contreras; Y. Corrales Morales; T. M. Cormier; P. Cortese; I. Cortes Maldonado; M. R. Cosentino; F. Costa; M. E. Cotallo; E. Crescio; P. Crochet; E. Cuautle; L. Cunqueiro; J. Cussonneau; A. Dainese; H. H. Dalsgaard; A. Danu; I. Das; S. Das; A. Dash; S. Dash; G. O. V. de Barros; A. De Caro; G. de Cataldo; J. de Cuveland; A. De Falco; M. De Gaspari; J. de Groot; D. De Gruttola; N. De Marco; S. De Pasquale; R. De Remigis; R. de Rooij; G. de Vaux; H. Delagrange; G. Dellacasa; A. Deloff; V. Demanov; E. Denes; A. Deppman; G. D'Erasmo; D. Derkach; A. Devaux; D. Di Bari; C. Di Giglio; S. Di Liberto; A. Di Mauro; P. Di Nezza; M. Dialinas; L. Diaz; R. Diaz; T. Dietel; R. Divia; O. Djuvsland; V. Dobretsov; A. Dobrin; T. Dobrowolski; B. Donigus; I. Dominguez; D. M. M. DonO. Dordic; A. K. Dubey; J. Dubuisson; L. Ducroux; P. Dupieux; A. K. Dutta Majumdar; M. R. Dutta Majumdar; D. Elia; D. Emschermann; A. Enokizono; B. Espagnon; M. Estienne; S. Esumi; D. Evans; S. Evrard; G. Eyyubova; C. W. Fabjan; D. Fabris; J. Faivre; D. Falchieri; A. Fantoni; M. Fasel; O. Fateev; R. Fearick; A. Fedunov; D. Fehlker; V. Fekete; D. Felea; B. Fenton-Olsen; G. Feofilov; A. Fernandez Tellez; E. G. Ferreiro; A. Ferretti; R. Ferretti; M. A. S. Figueredo; S. Filchagin; R. Fini; F. M. Fionda; E. M. Fiore; M. Floris; Z. Fodor; S. Foertsch; P. Foka; S. Fokin; F. Formenti; E. Fragiacomo; M. Fragkiadakis; U. Frankenfeld; A. Frolov; U. Fuchs; F. Furano; C. Furget; M. Fusco Girard; J. J. Gaardhoje; S. Gadrat; M. Gagliardi; A. Gago; M. Gallio; P. Ganoti; M. S. Ganti; C. Garabatos; C. Garcia Trapaga; J. Gebelein; R. Gemme; M. Germain; A. Gheata; M. Gheata; B. Ghidini; P. Ghosh; G. Giraudo; P. Giubellino; E. Gladysz-Dziadus; R. Glasow; P. Glassel; A. Glenn; R. Gomez Jimenez; H. Gonzalez Santos; L. H. Gonzalez-Trueba; P. Gonzalez-Zamora; S. Gorbunov; Y. Gorbunov; S. Gotovac; H. Gottschlag; V. Grabski; R. Grajcarek; A. Grelli; A. Grigoras; C. Grigoras; V. Grigoriev; A. Grigoryan; S. Grigoryan; B. Grinyov; N. Grion; P. Gros; J. F. Grosse-Oetringhaus; J. -Y. Grossiord; R. Grosso; F. Guber; R. Guernane; B. Guerzoni; K. Gulbrandsen; H. Gulkanyan; T. Gunji; A. Gupta; R. Gupta; H. -A. Gustafsson; H. Gutbrod; O. Haaland; C. Hadjidakis; M. Haiduc; H. Hamagaki; G. Hamar; J. Hamblen; B. H. Han; J. W. Harris; M. Hartig; A. Harutyunyan; D. Hasch; D. Hasegan

2010-05-21T23:59:59.000Z

448

STRUCTURE AND PROPERTIES OF SPUTTER-DEPOSITED CdTe W. T. PAWLEWICZ, R. P. ALLEN, H. G. BARRUS and N. LAEGREID  

E-Print Network [OSTI]

417 STRUCTURE AND PROPERTIES OF SPUTTER-DEPOSITED CdTe W. T. PAWLEWICZ, R. P. ALLEN, H. G. BARRUS minces de CdTe d'épaisseur comprise entre 2 et 10 03BCm ont été préparés par pulvérisation cathodique par des résultats peu encourageants. Abstract. 2014 CdTe films were sputter deposited in thicknesses

Paris-Sud XI, Université de

449

JOURNAL DE PHYSIQUE Colloque C6, suppldment au n06, tome 40, juin 1979, page (26-169 PHOTOPLASTIC EFFECT I N CdTe  

E-Print Network [OSTI]

EFFECT I N CdTe E.Y. ~utmanas" and P. ~aasen'" 'Department of Materials Engineering, Techion t du dopage sur les parametres de l ' e f f e t photoplastique (PPE) ont St6 etudieespour l e CdTe. Un modele de l ' e f f e t PPE du CdTe est discut6. Abstract.- The influence o f p l a s t i c deformation

Boyer, Edmond

450

Royal SwediSh academy of engineeRing ScienceS (iVa) a TRibuTe To The memoRy of  

E-Print Network [OSTI]

Royal SwediSh academy of engineeRing ScienceS (iVa) a TRibuTe To The memoRy of SVanTe a; A TribuTe To The MeMory of PresenTed AT The 2008 AnnuAl MeeTing of The royAl swedish AcAdeMy; The Royal Swedish Academy of Engineering Sciences (IVA) is an independent, learned society that promotes

Ponce, V. Miguel

451

Development of CdS/CdTe Tin Film Devices for St. Gobain Coated Glass: Cooperative Research and Development Final Report, CRADA Number CRD-08-317  

SciTech Connect (OSTI)

Research performed at NREL to produce CdS/CdTe devices on St. Gobain coated-glass material to establish a baseline CdS/CdTe device process and determine baseline device performance parameters on St. Gobain material. Performance of these baseline devices compared to similar devices produced by applying the established baseline CdS/CdTe process on alternative St. Gobain coated-glass materials.

Gessert, T.

2012-04-01T23:59:59.000Z

452

Search for narrow resonances and quantum black holes in inclusive and b-tagged dijet mass spectra from pp collisions at s?=7 TeV  

E-Print Network [OSTI]

V), and on the masses of W? (1.92 TeV) and Z? (1.47 TeV) bosons. The limits on the minimum mass of quantum black holes range from 4 to 5.3 TeV. In addition, b-quark tagging is applied to the two leading jets and upper limits are set on the production of narrow dijet...

Baringer, Philip S.; Bean, Alice; Benelli, Gabriele; Kenny, R. P. III; Murray, Michael J.; Noonan, Danny; Sanders, Stephen J.; Stringer, Robert W.; Tinti, Gemma; Wood, Jeffrey Scott

2013-01-02T23:59:59.000Z

453

The effect of structural vacancies on the thermoelectric properties of (Cu{sub 2}Te){sub 1?x}(Ga{sub 2}Te{sub 3}){sub x}  

SciTech Connect (OSTI)

We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu{sub 2}Te){sub 1?x}(Ga{sub 2}Te{sub 3}){sub x} (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu{sub 2}Te and Ga{sub 2}Te{sub 3}, and possesses tunable structural vacancy concentrations. This materials system is not suitable due to the cost and scarcity of the constituent elements, but the vacancy behavior is well understood and will provide a valuable test case for other systems more suitable from the standpoint of cost and abundance of raw materials, which also possesses these vacancy features, but whose structural characterization is lacking at this stage. We find that the nominally defect free phase CuGaTe{sub 2} possess the highest ZT (ZT=S{sup 2}T/??, where S is the Seebeck coefficient and ? is the electrical resistivity ? is the thermal conductivity and T is the absolute temperature) which approaches 1 at 840 K and seems to continuously increase above this temperature. This result is due to the unexpectedly low thermal conductivity found for this material at high temperature. The low thermal conductivity was caused by strong Umklapp (thermally resistive scattering processes involving three phonons) phonon scattering. We find that due to the coincidentally strong scattering of carriers by the structural defects that higher concentrations of these features lead to poor electrical transport properties and decreased ZT. - Graphical abstract: Thermal conductivity and zT as a function of temperature for a series of compounds of the type (Cu{sub 2}Te){sub 1-x}(Ga{sub 2}Te{sub 3})x (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75). Highlights: ? All the samples show p-type semiconducting behavior in the temperature dependence of the Seebeck and Hall coefficients. ? The increased carrier concentration and the introduction of vacancies diminish the carrier mobility and power factor. ? The low temperature k decreases significantly as the Ga{sub 2}Te{sub 3} content increases due to increasing point defects. ? The highest ZT ? 1.0 at 840 K among the samples in this study was found in CuGaTe2, which contains no vacancies.

Ye, Zuxin; Young Cho, Jung; Tessema, Misle M. [Optimal Inc., Plymouth Township, MI 48170 (United States); Salvador, James R., E-mail: james.salvador@gm.com [GM Global R and D, Warren, MI 48090 (United States); Waldo, Richard A. [GM Global R and D, Warren, MI 48090 (United States); Wang, Hsin; Cai, Wei [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2013-05-15T23:59:59.000Z

454

Electron and hole drift mobility measurements on thin film CdTe solar cells Qi Long, Steluta A. Dinca, E. A. Schiff, Ming Yu, and Jeremy Theil  

E-Print Network [OSTI]

.1063/1.2220491 Lock-in thermography and nonuniformity modeling of thin-film CdTe solar cells Appl. Phys. Lett. 84, 729

Schiff, Eric A.

455

Search for new light gauge boson in Higgs boson decays to four-lepton events in pp collisions at 8 TeV with the ATLAS detector  

E-Print Network [OSTI]

Search for new light gauge boson in Higgs boson decays to four-lepton events in pp collisions at 8 TeV with the ATLAS detector

Paredes Hernandez, Daniela; The ATLAS collaboration

2015-01-01T23:59:59.000Z

456

Transport and mechanical property evaluation of (AgSbTe){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87, 0.90)  

SciTech Connect (OSTI)

(AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (known collectively by the acronym of their constituent elements as TAGS-x, where x designates the mole fraction of GeTe) materials, despite being described over 40 years ago, have only recently been studied in greater detail from a fundamental standpoint. We have prepared a series of samples with composition (AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87 and 0.90). Cast ingots of the above compositions were ground and consolidated by spark plasma sintering (SPS). Sintering conditions, specifically high applied pressures of 65 MPa and slow heating rates, were identified as important variables that lead to samples with low porosity and good mechanical strength. The resulting ingots were cut for high temperature electrical, thermal transport and mechanical property evaluation. TAGS-85 was found to have the highest ZT of all samples investigated (ZT=1.36 at 700 K) as a result of its very low value of thermal conductivity. Hall effect measurements performed from 5 to 300 K found these materials to have complex multi-band transport characteristics. - Graphical Abstract: Powder X-ray diffraction of TAGS-x (x=0.80, 0.82, 0.85, 0.87 and 0.90) showing characteristic bifurcation indicative of rhombohedral structure.

Salvador, James R., E-mail: james.salvador@gm.c [Materials and Processes Laboratory, GM R and D Center, Warren, MI 48090 (United States); Yang, J. [Materials and Processes Laboratory, GM R and D Center, Warren, MI 48090 (United States); Shi, X. [Optimal, Inc. Plymouth Township, MI 48170 (United States); Wang, H.; Wereszczak, A.A. [High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2009-08-15T23:59:59.000Z

457

The Protocol Of KFM Characterization On Cross-section Of CdS/CdTe Thin Film Solar Cell  

SciTech Connect (OSTI)

In this work, we report a series of Kelvin Force Microscopy (KFM) measurements, suitable to observe the topography and the contact potential difference (CPD) distribution of the following stack: CdTe/CdS/ITO/glass. The sample is prepared by mechanical polishing after cleavage to decrease the roughness. In order to have a better understanding of the charge transport inside the solar cell and to vary the Fermi level pinning effect, different bias are applied to the sample. The CPD variations with different bias on cross-section in dark condition are presented. We observe the reverse bias widens the CdTe/CdS depletion region. Under illumination, electron and holes are generated near the interface and varies the CPD distribution. Additionally, the chemical composition of each layer has been investigated by nano-Auger electron spectroscopy (AES). We observe the interdiffusion at the CdTe/CdS interface and determine the composition of the active layers to be CdTe/CdS{sub 0.7}Te{sub 0.3}.

You, L. [CEA - LETI, MINATEC Campus, 17 rue des Martyrs - 38054 Grenoble Cedex 9 (France); LTM-CNRS, 17, rue des Martyrs, F38054 Grenoble Cedex 9 (France); Chevalier, N.; Bernardi, S.; Martinez, E.; Mariolle, D.; Feuillet, G.; Chabli, A.; Bertin, F. [CEA - LETI, MINATEC Campus, 17 rue des Martyrs - 38054 Grenoble Cedex 9 (France); Kogelschatz, M. [LTM-CNRS, 17, rue des Martyrs, F38054 Grenoble Cedex 9 (France); Bremond, G. [Universite de Lyon, Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7 Avenue Jean Capelle, Bat. Blaise Pascal, F69621 Villeurbanne Cedex (France)

2011-11-10T23:59:59.000Z

458

Neutrinos from the Galactic Center in the Light of its Gamma-Ray Detection at TeV Energy  

E-Print Network [OSTI]

We re-evaluate the event rate expected in km^3-scale detectors for neutrinos from the direction of the Galactic Center (GC) in light of recent spectral measurements obtained by the HESS instrument for ~TeV gamma-radiation from this direction. In the most plausible scenario the re-evaluated event rate is smaller than that previously calculated--and here re-calculated--on the basis of EGRET data. However, the GC TeV gamma-ray detections by the Whipple, CANGAROO, and HESS instruments, together with the strong indications for an overabundance of cosmic rays coming from the GC at EeV energies, strengthen the expectation for a detectable, TeV-PeV GC neutrino signal from proton-proton interactions in that region. If the TeV gamma-ray--EeV cosmic ray anisotropy connection is correct, this signal will be detectable within a year and half for km^3-scale neutrino detectors in the Northern Hemisphere at super-TeV energies and, significantly, should also be detectable in 1.6 years by the South Polar IceCube detector at energies > 10^14 eV. The GC neutrino signal should also produce a detectable signal from neutrino showering and resonant W^- production by anti-electron-neutrinos in the volume of a km^3-scale detector.

Roland M. Crocker; Fulvio Melia; Raymond R. Volkas

2005-02-10T23:59:59.000Z

459

Discovery of TeV gamma-ray emission from the Pulsar Wind Nebula 3C 58 by MAGIC  

E-Print Network [OSTI]

The Pulsar Wind Nebula (PWN) 3C 58 is energized by one of the highest spin-down power pulsars known (5% of Crab pulsar) and it has been compared to the Crab Nebula due to their morphological similarities. This object was detected by Fermi-LAT with a spectrum extending beyond 100 GeV. We analyzed 81 hours of 3C 58 data taken with the MAGIC telescopes and we detected VHE gamma-ray emission for the first time at TeV energies with a significance of 5.7 sigma and an integral flux of 0.65% C.U. above 1 TeV. The differential energy spectrum between 400 GeV and 10 TeV is well described by a power-law function $d\\Phi/dE=f_{o}(E/1TeV)^{-\\Gamma}$ with $f_{o}=(2.0\\pm0.4stat\\pm0.6sys) 10^{-13}cm^{-2}s^{-1}TeV^{-1}$ and $\\Gamma=2.4\\pm0.2sta\\pm0.2sys$. This leads 3C 58 to be the least luminous PWN ever detected at VHE and the one with the lowest flux at VHE to date. According to time-dependent models in which electrons up-scatter photon fields, the best representation favors a distance to the PWN of 2 kpc and FIR comparable...

Bigas, O Blanch; Carmona, E; Pérez-Torres, M A

2015-01-01T23:59:59.000Z

460

RAPID TeV GAMMA-RAY FLARING OF BL LACERTAE  

SciTech Connect (OSTI)

We report on the detection of a very rapid TeV gamma-ray flare from BL Lacertae on 2011 June 28 with the Very Energetic Radiation Imaging Telescope Array System (VERITAS). The flaring activity was observed during a 34.6 minute exposure, when the integral flux above 200 GeV reached (3.4 {+-} 0.6) Multiplication-Sign 10{sup -6} photons m{sup -2} s{sup -1}, roughly 125% of the Crab Nebula flux measured by VERITAS. The light curve indicates that the observations missed the rising phase of the flare but covered a significant portion of the decaying phase. The exponential decay time was determined to be 13 {+-} 4 minutes, making it one of the most rapid gamma-ray flares seen from a TeV blazar. The gamma-ray spectrum of BL Lacertae during the flare was soft, with a photon index of 3.6 {+-} 0.4, which is in agreement with the measurement made previously by MAGIC in a lower flaring state. Contemporaneous radio observations of the source with the Very Long Baseline Array revealed the emergence of a new, superluminal component from the core around the time of the TeV gamma-ray flare, accompanied by changes in the optical polarization angle. Changes in flux also appear to have occurred at optical, UV, and GeV gamma-ray wavelengths at the time of the flare, although they are difficult to quantify precisely due to sparse coverage. A strong flare was seen at radio wavelengths roughly four months later, which might be related to the gamma-ray flaring activities. We discuss the implications of these multiwavelength results.

Arlen, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States)] [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Aune, T.; Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States)] [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R. [Department of Physics, Washington University, St. Louis, MO 63130 (United States)] [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States)] [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland)] [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States)] [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Cui, W.; Feng, Q.; Finley, J. P. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States)] [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Dumm, J.; Fortson, L. [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)] [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States); Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States)] [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Falcone, A. [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States)] [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Federici, S. [DESY, Platanenallee 6, D-15738 Zeuthen (Germany)] [DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Finnegan, G., E-mail: qfeng@purdue.edu, E-mail: cui@purdue.edu [Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112 (United States); Collaboration: VERITAS Collaboration; and others

2013-01-10T23:59:59.000Z

Note: This page contains sample records for the topic "graphi te hoback" from the National Library of EnergyBeta (NLEBeta).
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461

High thermoelectric performance BiSbTe alloy with unique low-dimensional structure  

SciTech Connect (OSTI)

We report a detailed description of an innovative route of a melt spinning (MS) technique combined with a subsequent spark plasma sintering process in order to obtain high performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material, which possesses a unique low-dimensional structure. The unique structure consists of an amorphous structure, 5-15 nm fine nanocrystalline regions, and coherent interfaces between the resulting nanocrystalline regions. Measurements of the thermopower, electrical conductivity, and thermal conductivity have been performed over a range of temperature of 300-400 K. We found that MS technique can give us considerable control over the resulting nanostructure with good thermal stability during the temperature range of 300-400 K and this unique structure can effectively adjust the transport of phonons and electrons, in a manner such that it is beneficial to the overall thermoelectric performance of the material, primarily a reduction in the lattice thermal conductivity. Subsequently, this results in a maximum figure of merit ZT value of 1.56 at 300 K for p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material. This ZT value is over a 50% improvement of that of the state of the art commercial Bi{sub 2}Te{sub 3} materials. We also report results of thermal cycling of this material for over one hundred cycles between 300-400 K. Our work offers an innovative route for developing high performance bismuth telluride based alloys and devices, which have even broader prospects for commercial applications. This technique may also be applicable to other thermoelectric materials.

Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

2009-06-01T23:59:59.000Z

462

VARIABLE TeV EMISSION AS A MANIFESTATION OF JET FORMATION IN M87?  

SciTech Connect (OSTI)

It is proposed that the variable TeV emission observed in M87 may be produced in a starved magnetospheric region, above which the outflow associated with the VLBA jet is established. It is shown that annihilation of MeV photons emitted by the radiative inefficient flow in the vicinity of the black hole can lead to injection of seed charges on open magnetic field lines, with a density that depends sensitively on accretion rate, n{sub {+-}}{proportional_to} m-dot {sup 4}. For an accretion rate that corresponds to the inferred jet power, and to a fit of the observed spectral energy distribution by an ADAF model, the density of injected pairs is found to be smaller than the Goldreich-Julian (GJ) density by a factor of a few. It is also shown that inverse Compton scattering of ambient photons by electrons (positrons) accelerating in the gap can lead to a large multiplicity, {approx}10{sup 3}, while still allowing photons at energies of up to a few TeV to freely escape the system. The estimated gap width is not smaller than 0.01r{sub s} if the density of seed charges is below the GJ value. The very high energy power radiated by the gap can easily account for the luminosity of the TeV source detected by H.E.S.S. The strong dependence of injected pair density on accretion rate should render the gap emission highly intermittent. We also discuss briefly the application of this mechanism to Sgr A{sup *}.

Levinson, Amir [School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978 (Israel); Rieger, Frank [Max-Planck-Institut fuer Kernphysik, P.O. Box 103980, 69029 Heidelberg (Germany)

2011-04-01T23:59:59.000Z

463

Energy spectrum of charge carriers in Ag{sub 2}Te  

SciTech Connect (OSTI)

Conductivity {sigma}(T) and Hall constant R(B, T) are studied for Ag{sub 2}Te with excess 0.1% of Te. The change in the R sign from (-) to (+) is found in dependences R(B) at various temperatures. In the temperature dependences of R in a range of 1-3 kG, two extrema are found, namely, minimum at T {approx} 60 and maximum at T {approx} 80 K, and at B {>=} 5 kG, the double change in sign of R from (-) to (+) and from (+) to (-) is found. Temperatures of sign inversion for R depend on the magnetic field. At B = 15 kG, the sign of R varies from (-) to (+) at T {approx} 38 K, and from (+) to (-) at T {approx} 70 K. It is found approximately in the region of the change in the sign of R(T), the concentration n(T) and electrical conductivity pass through the minimum. It is established that the minima of n(T) and {sigma}(T), extrema in R(T), and sign inversion for R(T) from (-) to (+) as well as the overestimated temperature dependence n{infinity}T{sup 4} are caused by localization of conduction electrons at acceptor levels entering the conduction band of Ag{sub 2}Te. The values of parameters of electrons (n, {mu}{sub n}) and holes (p, {mu}{sub p}) at the points of the change in the sign of R(T) from (-) to (+) and from (+) to (-) are determined.

Aliyev, S. A.; Agayev, Z. F., E-mail: agayevz@rambler.ru; Selimzadeh, R. I. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2008-12-15T23:59:59.000Z

464

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot  

E-Print Network [OSTI]

We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction.

Trojnar, A; Kadantsev, E; Hawrylak, P; Goryca, M; Kazimierczuk, T; Kossacki, P; Wojnar, P; Potemski, M

2011-01-01T23:59:59.000Z

465

Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells  

SciTech Connect (OSTI)

Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K. [Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF (United Kingdom); Taylor, A. A.; Mendis, B. G.; Bowen, L. [G. J. Russell Microscopy Facility, University of Durham, South Road, Durham DH1 3LE (United Kingdom)

2014-02-03T23:59:59.000Z

466

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot  

E-Print Network [OSTI]

We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction.

A. Trojnar; M. Korkusinski; E. Kadantsev; P. Hawrylak; M. Goryca; T. Kazimierczuk; P. Kossacki; P. Wojnar; M. Potemski

2011-05-04T23:59:59.000Z

467

Anomalous scaling and super-roughness in the growth of CdTe polycrystalline films  

E-Print Network [OSTI]

CdTe films grown on glass substrates covered by fluorine doped tin oxide by Hot Wall Epitaxy (HWE) were studied through the interface dynamical scaling theory. Direct measures of the dynamical exponent revealed an intrinsically anomalous scaling characterized by a global roughness exponent $\\alpha$ distinct from the local one (the Hurst exponent $H$), previously reported [Ferreira \\textit{et al}., Appl. Phys. Lett. \\textbf{88}, 244103 (2006)]. A variety of scaling behaviors was obtained with varying substrate temperature. In particular, a transition from a intrinsically anomalous scaling regime with $H\

Angélica S. Mata; Silvio C. Ferreira, Jr.; Igor R. B. Ribeiro; Sukarno O. Ferreira

2011-01-06T23:59:59.000Z

468

Discovery of Localized Regions of Excess 10-TeV Cosmic Rays  

E-Print Network [OSTI]

An analysis of 7 years of Milagro data performed on a 10-degree angular scale has found two localized regions of excess of unknown origin with greater than 12 sigma significance. Both regions are inconsistent with gamma-ray emission at a level of 11 sigma. One of the regions has a different energy spectrum than the isotropic cosmic-ray flux at a level of 4.6 sigma, and it is consistent with hard spectrum protons with an exponential cutoff, with the most significant excess at ~10 TeV. Potential causes of these excesses are explored, but no compelling explanations are found.

Abdo, A A; Aune, T; Berley, D; Blaufuss, E; Casanova, S; Chen, C; Dingus, B L; Ellsworth, R W; Fleysher, L; Fleysher, R; Gonzales, M M; Goodman, J A; Hoffman, C M; Hüntemeyer, P H; Kolterman, B E; Lansdell, C P; Linnemann, J T; McEnery, J E; Mincer, A I; Némethy, P; Noyes, D; Pretz, J; Ryan, J M; Parkinson, P M Saz; Shoup, A; Sinnis, G; Smith, A J; Sullivan, G W; Vasileiou, V; Walker, G P; Williams, D A; Yodh, G B

2008-01-01T23:59:59.000Z

469

TeV-scale gauged B-L symmetry with inverse seesaw mechanism  

SciTech Connect (OSTI)

We propose a modified version of the TeV-scale B-L extension of the standard model, where neutrino masses are generated through the inverse seesaw mechanism. We show that heavy neutrinos in this model can be accessible via clean signals at the LHC. The search for the extra gauge boson Z{sub B-L}{sup '} through the decay into dileptons or two dileptons plus missing energy is studied. We also show that the B-L extra Higgs boson can be directly probed at the LHC via a clean dilepton and missing energy signal.

Khalil, Shaaban [Center for Theoretical Physics at the British University in Egypt, Sherouk City, Cairo 11837 (Egypt) and Department of Mathematics, Ain Shams University, Faculty of Science, Cairo, 11566 (Egypt)

2010-10-01T23:59:59.000Z

470

Discovering Higgs boson pair production through rare final states at a 100 TeV collider  

E-Print Network [OSTI]

We consider Higgs boson pair production at a future proton collider with centre-of-mass energy of 100 TeV, focusing on rare final states that include a bottom-anti-bottom quark pair and multiple isolated leptons: $hh \\rightarrow (b\\bar{b}) + n \\ell + X$, $n = \\{2,4\\}$, $X = \\{ E_T^\\mathrm{miss}, \\gamma, -\\}$. We construct experimental search strategies for observing the process through these channels and make suggestions on the desired requirements for the detector design of the future collider.

Papaefstathiou, Andreas

2015-01-01T23:59:59.000Z

471

CuAlTe{sub 2} under high temperature: An ab initio approach  

SciTech Connect (OSTI)

The structural properties of the ternary CuAlTe{sub 2} semiconductor are investigated using the full-potential linearized augmented plane wave plus local orbital (FP?LAPW+lo) method within the local density approximation in the frame of the density functional theory. Our calculated results for structural properties are in excellent agreement with experimental values in comparison to the previous theoretical results. Through the quasi - harmonic Debye model, we have obtained successfully the thermodynamic properties in the pressure range from 0 to 50 GPa and the temperature range from 0 to 1100 K.

Sharma, Monika, E-mail: monikasharma.fizics@gmail.co.in; Singh, Poonam, E-mail: monikasharma.fizics@gmail.co.in; Kumari, Meena, E-mail: monikasharma.fizics@gmail.co.in; Verma, U. P., E-mail: monikasharma.fizics@gmail.co.in [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

2014-04-24T23:59:59.000Z

472

Technical evaluation of Solar Cells, Inc., CdTe modules and array at NREL  

SciTech Connect (OSTI)

The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

Kroposki, B.; Strand, T.; Hansen, R. [and others] [and others

1996-05-01T23:59:59.000Z

473

Modified Knudsen ansatz and elliptic flow in $\\sqrt{s}$=14 TeV pp collisions  

E-Print Network [OSTI]

Assuming that hot spots are formed in initial pp collisions, in a modified Knudsen ansatz, which accounts for the entropy generation in viscous fluid evolution, we have given predictions for elliptic flow in $\\sqrt{s}$=14 TeV pp collisions. Predicted flow depends on the number of hot spots and hot spot sizes. If two to four hot spots of size $\\approx$0.1 fm are formed in initial pp collisions, in events with multiplicity $n_ {mult}\\approx$10-15, modified Knudsen ansatz predicted flow is accessible experimentally in 4th order cumulant method.

Chaudhuri, A K

2011-01-01T23:59:59.000Z

474

Modified Knudsen ansatz and elliptic flow in $\\sqrt{s}$=14 TeV pp collisions  

E-Print Network [OSTI]

Assuming that hot spots are formed in initial pp collisions, in a modified Knudsen ansatz, which accounts for the entropy generation in viscous fluid evolution, we have given predictions for elliptic flow in $\\sqrt{s}$=14 TeV pp collisions. Predicted flow depends on the number of hot spots and hot spot sizes. If two to four hot spots of size $\\approx$0.1 fm are formed in initial pp collisions, in events with multiplicity $n_ {mult}\\approx$10-15, modified Knudsen ansatz predicted flow is accessible experimentally in 4th order cumulant method.

A. K. Chaudhuri

2011-05-16T23:59:59.000Z

475

Discovery of Localized Regions of Excess 10-TeV Cosmic Rays  

E-Print Network [OSTI]

An analysis of 7 years of Milagro data performed on a 10-degree angular scale has found two localized regions of excess of unknown origin with greater than 12 sigma significance. Both regions are inconsistent with gamma-ray emission with high confidence. One of the regions has a different energy spectrum than the isotropic cosmic-ray flux at a level of 4.6 sigma, and it is consistent with hard spectrum protons with an exponential cutoff, with the most significant excess at ~10 TeV. Potential causes of these excesses are explored, but no compelling explanations are found.

A. A. Abdo; B. Allen; T. Aune; D. Berley; E. Blaufuss; S. Casanova; C. Chen; B. L. Dingus; R. W. Ellsworth; L. Fleysher; R. Fleysher; M. M. Gonzales; J. A. Goodman; C. M. Hoffman; P. H. Hüntemeyer; B. E. Kolterman; C. P. Lansdell; J. T. Linnemann; J. E. McEnery; A. I. Mincer; P. Nemethy; D. Noyes; J. Pretz; J. M. Ryan; P. M. Saz Parkinson; A. Shoup; G. Sinnis; A. J. Smith; G. W. Sullivan; V. Vasileiou; G. P. Walker; D. A. Williams; G. B. Yodh

2008-10-14T23:59:59.000Z

476

J/psi polarization in pp collisions at sqrt(s)=7 TeV  

E-Print Network [OSTI]

The ALICE Collaboration has studied J/psi production in pp collisions at sqrt(s)=7 TeV at the LHC through its muon pair decay. The polar and azimuthal angle distributions of the decay muons were measured, and results on the J/psi polarization parameters lambda_theta and lambda_phi were obtained. The study was performed in the kinematic region 2.5

The ALICE Collaboration; B. Abelev; A. Abrahantes Quintana; D. Adamova; A. M. Adare; M. M. Aggarwal; G. Aglieri Rinella; A. G. Agocs; A. Agostinelli; S. Aguilar Salazar; Z. Ahammed; N. Ahmad; A. Ahmad Masoodi; S. U. Ahn; A. Akindinov; D. Aleksandrov; B. Alessandro; R. Alfaro Molina; A. Alici; A. Alkin; E. AlmarazAvina; T. Alt; V. Altini; S. Altinpinar; I. Altsybeev; C. Andrei; A. Andronic; V. Anguelov; C. Anson; T. Anticic; F. Antinori; P. Antonioli; L. Aphecetche; H. Appelshauser; N. Arbor; S. Arcelli; A. Arend; N. Armesto; R. Arnaldi; T. Aronsson; I. C. Arsene; M. Arslandok; A. Asryan; A. Augustinus; R. Averbeck; T. C. Awes; J. Aysto; M. D. Azmi; M. Bach; A. Badala; Y. W. Baek; R. Bailhache; R. Bala; R. Baldini Ferroli; A. Baldisseri; A. Baldit; F. Baltasar Dos Santos Pedrosa; J. Ban; R. C. Baral; R. Barbera; F. Barile; G. G. Barnafoldi; L. S. Barnby; V. Barret; J. Bartke; M. Basile; N. Bastid; B. Bathen; G. Batigne; B. Batyunya; C. Baumann; I. G. Bearden; H. Beck; I. Belikov; F. Bellini; R. Bellwied; E. Belmont-Moreno; S. Beole; I. Berceanu; A. Bercuci; Y. Berdnikov; D. Berenyi; C. Bergmann; L. Betev; A. Bhasin; A. K. Bhati; N. Bianchi; L. Bianchi; C. Bianchin; J. Bielcik; J. Bielcikova; A. Bilandzic; F. Blanco; F. Blanco; D. Blau; C. Blume; M. Boccioli; N. Bock; A. Bogdanov; H. Boggild; M. Bogolyubsky; L. Boldizsar; M. Bombara; J. Book; H. Borel; A. Borissov; C. Bortolin; S. Bose; F. Bossu; M. Botje; S. Bottger; B. Boyer; P. Braun-Munzinger; M. Bregant; T. Breitner; M. Broz; R. Brun; E. Bruna; G. E. Bruno; D. Budnikov; H. Buesching; S. Bufalino; K. Bugaiev; O. Busch; Z. Buthelezi; D. Caffarri; X. Cai; H. Caines; E. Calvo Villar; P. Camerini; V. Canoa Roman; G. Cara Romeo; W. Carena; F. Carena; N. Carlin Filho; F. Carminati; C. A. Carrillo Montoya; A. Casanova Diaz; M. Caselle; J. Castillo Castellanos; J. F. Castillo Hernandez; E. A. R. Casula; V. Catanescu; C. Cavicchioli; J. Cepila; P. Cerello; B. Chang; S. Chapeland; J. L. Charvet; S. Chattopadhyay; S. Chattopadhyay; M. Cherney; C. Cheshkov; B. Cheynis; E. Chiavassa; V. Chibante Barroso; D. D. Chinellato; P. Chochula; M. Chojnacki; P. Christakoglou; C. H. Christensen; P. Christiansen; T. Chujo; S. U. Chung; C. Cicalo; L. Cifarelli; F. Cindolo; J. Cleymans; F. Coccetti; J. -P. Coffin; F. Colamaria; D. Colella; G. Conesa Balbastre; Z. Conesa del Valle; P. Constantin; G. Contin; J. G. Contreras; T. M. Cormier; Y. Corrales Morales; P. Cortese; I. Cortes Maldonado; M. R. Cosentino; F. Costa; M. E. Cotallo; E. Crescio; P. Crochet; E. Cruz Alaniz; E. Cuautle; L. Cunqueiro; A. Dainese; H. H. Dalsgaard; A. Danu; D. Das; I. Das; K. Das; S. Dash; A. Dash; S. De; A. De Azevedo Moregula; G. O. V. de Barros; A. De Caro; G. de Cataldo; J. de Cuveland; A. De Falco; D. De Gruttola; H. Delagrange; E. Del Castillo Sanchez; A. Deloff; V. Demanov; N. De Marco; E. Denes; S. De Pasquale; A. Deppman; G. D Erasmo; R. de Rooij; D. Di Bari; T. Dietel; C. Di Giglio; S. Di Liberto; A. Di Mauro; P. Di Nezza; R. Divia; O. Djuvsland; A. Dobrin; T. Dobrowolski; I. Dominguez; B. Donigus; O. Dordic; O. Driga; A. K. Dubey; L. Ducroux; P. Dupieux; M. R. Dutta Majumdar; A. K. Dutta Majumdar; D. Elia; D. Emschermann; H. Engel; H. A. Erdal; B. Espagnon; M. Estienne; S. Esumi; D. Evans; G. Eyyubova; D. Fabris; J. Faivre; D. Falchieri; A. Fantoni; M. Fasel; R. Fearick; A. Fedunov; D. Fehlker; L. Feldkamp; D. Felea; G. Feofilov; A. Fernandez Tellez; E. G. Ferreiro; A. Ferretti; R. Ferretti; J. Figiel; M. A. S. Figueredo; S. Filchagin; R. Fini; D. Finogeev; F. M. Fionda; E. M. Fiore; M. Floris; S. Foertsch; P. Foka; S. Fokin; E. Fragiacomo; M. Fragkiadakis; U. Frankenfeld; U. Fuchs; C. Furget; M. Fusco Girard; J. J. Gaardhoje; M. Gagliardi; A. Gago; M. Gallio; D. R. Gangadharan; P. Ganoti; C. Garabatos; E. Garcia-Solis; I. Garishvili; J. Gerhard; M. Germain; C. Geuna; A. Gheata; M. Gheata; B. Ghidini; P. Ghosh; P. Gianotti; M. R. Girard; P. Giubellino; E. Gladysz-Dziadus; P. Glassel; R. Gomez; L. H. Gonzalez-Trueba; P. Gonzalez-Zamora; S. Gorbunov; A. Goswami; S. Gotovac; V. Grabski; L. K. Graczykowski; R. Grajcarek; A. Grelli; A. Grigoras; C. Grigoras; V. Grigoriev; S. Grigoryan; A. Grigoryan; B. Grinyov; N. Grion; P. Gros; J. F. Grosse-Oetringhaus; J. -Y. Grossiord; R. Grosso; F. Guber; R. Guernane; C. Guerra Gutierrez; B. Guerzoni; M. Guilbaud; K. Gulbrandsen; T. Gunji; A. Gupta; R. Gupta; H. Gutbrod; O. Haaland; C. Hadjidakis; M. Haiduc; H. Hamagaki; G. Hamar; B. H. Han; L. D. Hanratty; A. Hansen; Z. Harmanova; J. W. Harris; M. Hartig; D. Hasegan; D. Hatzifotiadou; A. Hayrapetyan; M. Heide; H. Helstrup; A. Herghelegiu; G. Herrera Corral; N. Herrmann; K. F. Hetland; B. Hicks; P. T. Hille; B. Hippolyte; T. Horaguchi; Y. Hori; P. Hristov; I. Hrivnacova; M. Huang; S. Huber; T. J. Humanic; D. S. Hwang; R. Ichou

2012-02-24T23:59:59.000Z

477

J/? Polarization in pp Collisions at ?s=7??TeV  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

The ALICE Collaboration has studied J/? production in pp collisions at ?s =7??TeV at the LHC through its muon pair decay. The polar and azimuthal angle distributions of the decay muons were measured, and results on the J/? polarization parameters ?? and ?? were obtained. The study was performed in the kinematic region 2.5t <8??GeV/c , in the helicity and Collins-Soper reference frames. In both frames, the polarization parameters are compatible with zero, within uncertainties.

Abelev, B.; Abrahantes Quintana, A.; Adamová, D.; Adare, A. M.; Aggarwal, M. M.; Aglieri Rinella, G.; Agocs, A. G.; Agostinelli, A.; Aguilar Salazar, S.; Ahammed, Z.; Ahmad, N.; Ahmad Masoodi, A.; Ahn, S. U.; Akindinov, A.; Aleksandrov, D.; Alessandro, B.; AlfaroMolina, R.; Alici, A.; Alkin, A.; Almaráz Aviña, E.; Alt, T.; Altini, V.; Altinpinar, S.; Altsybeev, I.; Andrei, C.; Andronic, A.; Anguelov, V.; Anson, C.; Anti?i?, T.; Antinori, F.; Antonioli, P.; Aphecetche, L.; Appelshäuser, H.; Arbor, N.; Arcelli, S.; Arend, A.; Armesto, N.; Arnaldi, R.; Aronsson, T.; Arsene, I. C.; Arslandok, M.; Asryan, A.; Augustinus, A.; Averbeck, R.; Awes, T. C.; Äystö, J.; Azmi, M. D.; Bach, M.; Badalà, A.; Baek, Y. W.; Bailhache, R.; Bala, R.; Baldini Ferroli, R.; Baldisseri, A.; Baldit, A.; Baltasar Dos Santos Pedrosa, F.; Bán, J.; Baral, R. C.; Barbera, R.; Barile, F.; Barnaföldi, G. G.; Barnby, L. S.; Barret, V.; Bartke, J.; Basile, M.; Bastid, N.; Bathen, B.; Batigne, G.; Batyunya, B.; Baumann, C.; Bearden, I. G.; Beck, H.; Belikov, I.; Bellini, F.; Bellwied, R.; Belmont-Moreno, E.; Beole, S.; Berceanu, I.; Bercuci, A.; Berdnikov, Y.; Berenyi, D.; Bergmann, C.; Berzano, D.; Betev, L.; Bhasin, A.; Bhati, A. K.; Bianchi, N.; Bianchi, L.; Bianchin, C.; Biel?ík, J.; Biel?íková, J.; Bilandzic, A.; Blanco, F.; Blanco, F.; Blau, D.; Blume, C.; Boccioli, M.; Bock, N.; Bogdanov, A.; Bøggild, H.; Bogolyubsky, M.; Boldizsár, L.; Bombara, M.; Book, J.; Borel, H.; Borissov, A.; Bortolin, C.; Bose, S.; Bossú, F.; Botje, M.; Böttger, S.; Boyer, B.; Braun-Munzinger, P.; Bregant, M.; Breitner, T.; Broz, M.; Brun, R.; Bruna, E.; Bruno, G. E.; Budnikov, D.; Buesching, H.; Bufalino, S.; Bugaiev, K.; Busch, O.; Buthelezi, Z.; Caffarri, D.; Cai, X.; Caines, H.; Calvo Villar, E.; Camerini, P.; Canoa Roman, V.; Cara Romeo, G.; Carena, W.; Carena, F.; Carlin Filho, N.; Carminati, F.; Carrillo Montoya, C. A.; Casanova Díaz, A.; Caselle, M.; Castillo Castellanos, J.; Castillo Hernandez, J. F.; Casula, E. A. R.; Catanescu, V.; Cavicchioli, C.; Cepila, J.; Cerello, P.; Chang, B.; Chapeland, S.; Charvet, J. L.; Chattopadhyay, S.; Chattopadhyay, S.; Cherney, M.; Cheshkov, C.; Cheynis, B.; Chiavassa, E.; Chibante Barroso, V.; Chinellato, D. D.; Chochula, P.; Chojnacki, M.; Christakoglou, P.; Christensen, C. H.; Christiansen, P.; Chujo, T.; Chung, S. U.; Cicalò, C.; Cifarelli, L.; Cindolo, F.; Cleymans, J.; Coccetti, F.; Coffin, J.-P.; Colamaria, F.; Colella, D.; Conesa Balbastre, G.; Conesa del Valle, Z.; Constantin, P.; Contin, G.; Contreras, J. G.; Cormier, T. M.; Corrales Morales, Y.; Cortese, P.; Cortés Maldonado, I.; Cosentino, M. R.; Costa, F.; Cotallo, M. E.; Crescio, E.; Crochet, P.; Cruz Alaniz, E.; Cuautle, E.; Cunqueiro, L.; Dainese, A.; Dalsgaard, H. H.; Danu, A.; Das, D.; Das, I.; Das, K.; Dash, S.; Dash, A.; De, S.; De Azevedo Moregula, A.; de Barros, G. O. V.; De Caro, A.; de Cataldo, G.; de Cuveland, J.; De Falco, A.; De Gruttola, D.; Delagrange, H.; Del Castillo Sanchez, E.; Deloff, A.; Demanov, V.; De Marco, N.; Dénes, E.; De Pasquale, S.; Deppman, A.; D’Erasmo, G.; de Rooij, R.; Di Bari, D.; Dietel, T.; Di Giglio, C.; Di Liberto, S.; Di Mauro, A.; Di Nezza, P.; Divià, R.; Djuvsland, Ø.; Dobrin, A.; Dobrowolski, T.; Domínguez, I.; Dönigus, B.; Dordic, O.; Driga, O.; Dubey, A. K.; Ducroux, L.; Dupieux, P.; Dutta Majumdar, M. R.; Dutta Majumdar, A. K.; Elia, D.; Emschermann, D.; Engel, H.; Erdal, H. A.; Espagnon, B.; Estienne, M.; Esumi, S.; Evans, D.; Eyyubova, G.; Fabris, D.; Faivre, J.; Falchieri, D.; Fantoni, A.; Fasel, M.; Fearick, R.; Fedunov, A.; Fehlker, D.; Feldkamp, L.; Felea, D.; Feofilov, G.; Fernández Téllez, A.; Ferreiro, E. G.; Ferretti, A.; Ferretti, R.; Figiel, J.; Figueredo, M. A. S.; Filchagin, S.; Fini, R.; Finogeev, D.; Fionda, F. M.; Fiore, E. M.; Floris, M.; Foertsch, S.; Foka, P.; Fokin, S.; Fragiacomo, E.; Fragkiadakis, M.; Frankenfeld, U.; Fuchs, U.; Furget, C.; Fusco Girard, M.; Gaardhøje, J. J.; Gagliardi, M.; Gago, A.; Gallio, M.; Gangadharan, D. R.; Ganoti, P.; Garabatos, C.; Garcia-Solis, E.; Garishvili, I.; Gerhard, J.; Germain, M.; Geuna, C.; Gheata, A.; Gheata, M.; Ghidini, B.; Ghosh, P.; Gianotti, P.; Girard, M. R.; Giubellino, P.; Gladysz-Dziadus, E.; Glässel, P.; Gomez, R.; González-Trueba, L. H.; González-Zamora, P.; Gorbunov, S.; Goswami, A.; Gotovac, S.; Grabski, V.; Graczykowski, L. K.; Grajcarek, R.; Grelli, A.; Grigoras, A.; Grigoras, C.; Grigoriev, V.; Grigoryan, S.; Grigoryan, A.; Grinyov, B.; Grion, N.; Gros, P.; Grosse-Oetringhaus, J. F.; Grossiord, J.-Y.; Grosso, R.; Guber, F.; Guernane, R.; Guerra Gutierrez, C.; Guerzoni, B.; Guilbaud, M.; Gulbrandsen, K.; Gunji, T.; Gupta, A.; Gupta, R.; Gutbrod, H.

2012-02-01T23:59:59.000Z

478

TeV Scale Quantum Gravity and Mirror Supernovae as Sources of Gamma Ray Bursts  

E-Print Network [OSTI]

Mirror matter models have been suggested recently as an explanation of neutrino puzzles and microlensing anomalies. We show that mirror supernovae can be a copious source of energetic gamma rays if one assumes that the quantum gravity scale is in the TeV range. We show that under certain assumptions plausible in the mirror models, the gamma energies could be degraded to the 10 MeV range (and perhaps even further) so as to provide an explanation of observed gamma ray bursts. This mechanism for the origin of the gamma ray bursts has the advantage that it neatly avoids the ``baryon load problem''.

R. N. Mohapatra; S. Nussinov; V. L. Teplitz

1999-09-22T23:59:59.000Z

479

Effect of annealing on the electrical properties of thallium-doped PbTe single crystals  

SciTech Connect (OSTI)

It is found that electrical parameters of PbTe single crystals, the character of the dependences of these parameters on temperature and Tl impurity concentration, and the conductivity type (signs of {alpha} and R) are governed to a great extent by the temperature of preliminary annealing. The cause of this effect is that the concentration of doubly charged vacancies in the tellurium sublattice increases with an increase in the annealing temperature, as a result of which the formation of electrically neutral or singly charged complexes of impurity-vacancy type becomes more likely.

Ahmedova, G. A., E-mail: gulgunahmed@yahoo.com; Abdinova, G. J.; Abdinov, J. Sh. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2011-02-15T23:59:59.000Z

480

Growth, Structure, and Magnetic Properties of CuFeTe{sub 2} Single Crystals  

SciTech Connect (OSTI)

CuFeTe{sub 2} single crystals were grown and the temperature dependence of their magnetic susceptibility in the temperature range 1.8-400 K was investigated. It is found that the magnetic susceptibility shows anomalies at temperatures T{sub s} = 65 and T{sub N} = 125 K. At T > 125 K, the crystal is in the paramagnetic state controlled by Fe{sup 2+} and Cu{sup 2+} ions with an effective magnetic moment of 1.44 {mu}B.

Dzhabbarov, A.I.; Orudzhev, S.K.; Guseinov, G.G.; Gakhramanov, N.F. [Institute of Physics, Academy of Sciences of Azerbaijan, pr. Dzhavida 33, Baku, 370143 (Azerbaijan)

2004-11-01T23:59:59.000Z

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481

Sandia National Laboratories: thin-film PV materials (Si CIGS CdTe)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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482

TeV Physics and Chiral Spectroscopy using Cold Molecules | Argonne National  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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483

Constraints on GRB TeV Emission from the GeV Extragalactic Diffuse Gamma-Ray Flux  

E-Print Network [OSTI]

TeV gamma rays emitted by GRBs are converted into electron-positron pairs via interactions with the extragalactic infrared radiation fields. In turn the pairs produced, whose trajectories are randomized by magnetic fields, will inverse Compton scatter off the cosmic microwave background photons. The beamed TeV gamma ray flux from GRBs is thus transformed into a GeV isotropic gamma ray flux, which contributes to the total extragalactic gamma-ray background emission. Assuming a model for the extragalactic radiation fields, for the GRB redshift distribution and for the GRB luminosity function, we use the measured GeV extragalactic gamma-ray flux to set upper limits on the GRB emission in TeV gamma rays that is predicted in several models.

Casanova, S; Zhang, B; Zhang, Bing

2006-01-01T23:59:59.000Z

484

Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms  

DOE Patents [OSTI]

Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.